Integration of multiple theories for the simulation of laser interference lithography processes

NASA Astrophysics Data System (ADS)

Lin, Te-Hsun; Yang, Yin-Kuang; Fu, Chien-Chung

2017-11-01

The periodic structure of laser interference lithography (LIL) fabrication is superior to other lithography technologies. In contrast to traditional lithography, LIL has the advantages of being a simple optical system with no mask requirements, low cost, high depth of focus, and large patterning area in a single exposure. Generally, a simulation pattern for the periodic structure is obtained through optical interference prior to its fabrication through LIL. However, the LIL process is complex and combines the fields of optical and polymer materials; thus, a single simulation theory cannot reflect the real situation. Therefore, this research integrates multiple theories, including those of optical interference, standing waves, and photoresist characteristics, to create a mathematical model for the LIL process. The mathematical model can accurately estimate the exposure time and reduce the LIL process duration through trial and error.

Integration of multiple theories for the simulation of laser interference lithography processes.

PubMed

Lin, Te-Hsun; Yang, Yin-Kuang; Fu, Chien-Chung

2017-11-24

The periodic structure of laser interference lithography (LIL) fabrication is superior to other lithography technologies. In contrast to traditional lithography, LIL has the advantages of being a simple optical system with no mask requirements, low cost, high depth of focus, and large patterning area in a single exposure. Generally, a simulation pattern for the periodic structure is obtained through optical interference prior to its fabrication through LIL. However, the LIL process is complex and combines the fields of optical and polymer materials; thus, a single simulation theory cannot reflect the real situation. Therefore, this research integrates multiple theories, including those of optical interference, standing waves, and photoresist characteristics, to create a mathematical model for the LIL process. The mathematical model can accurately estimate the exposure time and reduce the LIL process duration through trial and error.

Lithographic process window optimization for mask aligner proximity lithography

NASA Astrophysics Data System (ADS)

Voelkel, Reinhard; Vogler, Uwe; Bramati, Arianna; Erdmann, Andreas; Ünal, Nezih; Hofmann, Ulrich; Hennemeyer, Marc; Zoberbier, Ralph; Nguyen, David; Brugger, Juergen

2014-03-01

We introduce a complete methodology for process window optimization in proximity mask aligner lithography. The commercially available lithography simulation software LAB from GenISys GmbH was used for simulation of light propagation and 3D resist development. The methodology was tested for the practical example of lines and spaces, 5 micron half-pitch, printed in a 1 micron thick layer of AZ® 1512HS1 positive photoresist on a silicon wafer. A SUSS MicroTec MA8 mask aligner, equipped with MO Exposure Optics® was used in simulation and experiment. MO Exposure Optics® is the latest generation of illumination systems for mask aligners. MO Exposure Optics® provides telecentric illumination and excellent light uniformity over the full mask field. MO Exposure Optics® allows the lithography engineer to freely shape the angular spectrum of the illumination light (customized illumination), which is a mandatory requirement for process window optimization. Three different illumination settings have been tested for 0 to 100 micron proximity gap. The results obtained prove, that the introduced process window methodology is a major step forward to obtain more robust processes in mask aligner lithography. The most remarkable outcome of the presented study is that a smaller exposure gap does not automatically lead to better print results in proximity lithography - what the "good instinct" of a lithographer would expect. With more than 5'000 mask aligners installed in research and industry worldwide, the proposed process window methodology might have significant impact on yield improvement and cost saving in industry.

Simulation of the effect of incline incident angle in DMD Maskless Lithography

NASA Astrophysics Data System (ADS)

Liang, L. W.; Zhou, J. Y.; Xiang, L. L.; Wang, B.; Wen, K. H.; Lei, L.

2017-06-01

The aim of this study is to provide a simulation method for investigation of the intensity fluctuation caused by the inclined incident angle in DMD (digital micromirror device) maskless lithography. The simulation consists of eight main processes involving the simplification of the DMD aperture function and light propagation utilizing the non-parallel angular spectrum method. These processes provide a possibility of co-simulation in the spatial frequency domain, which combines the microlens array and DMD in the maskless lithography system. The simulation provided the spot shape and illumination distribution. These two parameters are crucial in determining the exposure dose in the existing maskless lithography system.

Range pattern matching with layer operations and continuous refinements

NASA Astrophysics Data System (ADS)

Tseng, I.-Lun; Lee, Zhao Chuan; Li, Yongfu; Perez, Valerio; Tripathi, Vikas; Ong, Jonathan Yoong Seang

2018-03-01

At advanced and mainstream process nodes (e.g., 7nm, 14nm, 22nm, and 55nm process nodes), lithography hotspots can exist in layouts of integrated circuits even if the layouts pass design rule checking (DRC). Existence of lithography hotspots in a layout can cause manufacturability issues, which can result in yield losses of manufactured integrated circuits. In order to detect lithography hotspots existing in physical layouts, pattern matching (PM) algorithms and commercial PM tools have been developed. However, there are still needs to use DRC tools to perform PM operations. In this paper, we propose a PM synthesis methodology, which uses a continuous refinement technique, for the automatic synthesis of a given lithography hotspot pattern into a DRC deck, which consists of layer operation commands, so that an equivalent PM operation can be performed by executing the synthesized deck with the use of a DRC tool. Note that the proposed methodology can deal with not only exact patterns, but also range patterns. Also, lithography hotspot patterns containing multiple layers can be processed. Experimental results show that the proposed methodology can accurately and efficiently detect lithography hotspots in physical layouts.

Vectorial mask optimization methods for robust optical lithography

NASA Astrophysics Data System (ADS)

Ma, Xu; Li, Yanqiu; Guo, Xuejia; Dong, Lisong; Arce, Gonzalo R.

2012-10-01

Continuous shrinkage of critical dimension in an integrated circuit impels the development of resolution enhancement techniques for low k1 lithography. Recently, several pixelated optical proximity correction (OPC) and phase-shifting mask (PSM) approaches were developed under scalar imaging models to account for the process variations. However, the lithography systems with larger-NA (NA>0.6) are predominant for current technology nodes, rendering the scalar models inadequate to describe the vector nature of the electromagnetic field that propagates through the optical lithography system. In addition, OPC and PSM algorithms based on scalar models can compensate for wavefront aberrations, but are incapable of mitigating polarization aberrations in practical lithography systems, which can only be dealt with under the vector model. To this end, we focus on developing robust pixelated gradient-based OPC and PSM optimization algorithms aimed at canceling defocus, dose variation, wavefront and polarization aberrations under a vector model. First, an integrative and analytic vector imaging model is applied to formulate the optimization problem, where the effects of process variations are explicitly incorporated in the optimization framework. A steepest descent algorithm is then used to iteratively optimize the mask patterns. Simulations show that the proposed algorithms can effectively improve the process windows of the optical lithography systems.

Study on photochemical analysis system (VLES) for EUV lithography

NASA Astrophysics Data System (ADS)

Sekiguchi, A.; Kono, Y.; Kadoi, M.; Minami, Y.; Kozawa, T.; Tagawa, S.; Gustafson, D.; Blackborow, P.

2007-03-01

A system for photo-chemical analysis of EUV lithography processes has been developed. This system has consists of 3 units: (1) an exposure that uses the Z-Pinch (Energetiq Tech.) EUV Light source (DPP) to carry out a flood exposure, (2) a measurement system RDA (Litho Tech Japan) for the development rate of photo-resists, and (3) a simulation unit that utilizes PROLITH (KLA-Tencor) to calculate the resist profiles and process latitude using the measured development rate data. With this system, preliminary evaluation of the performance of EUV lithography can be performed without any lithography tool (Stepper and Scanner system) that is capable of imaging and alignment. Profiles for 32 nm line and space pattern are simulated for the EUV resist (Posi-2 resist by TOK) by using VLES that hat has sensitivity at the 13.5nm wavelength. The simulation successfully predicts the resist behavior. Thus it is confirmed that the system enables efficient evaluation of the performance of EUV lithography processes.

A two-in-one process for reliable graphene transistors processed with photo-lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahlberg, P.; Hinnemo, M.; Song, M.

2015-11-16

Research on graphene field-effect transistors (GFETs) has mainly relied on devices fabricated using electron-beam lithography for pattern generation, a method that has known problems with polymer contaminants. GFETs fabricated via photo-lithography suffer even worse from other chemical contaminations, which may lead to strong unintentional doping of the graphene. In this letter, we report on a scalable fabrication process for reliable GFETs based on ordinary photo-lithography by eliminating the aforementioned issues. The key to making this GFET processing compatible with silicon technology lies in a two-in-one process where a gate dielectric is deposited by means of atomic layer deposition. During thismore » deposition step, contaminants, likely unintentionally introduced during the graphene transfer and patterning, are effectively removed. The resulting GFETs exhibit current-voltage characteristics representative to that of intrinsic non-doped graphene. Fundamental aspects pertaining to the surface engineering employed in this work are investigated in the light of chemical analysis in combination with electrical characterization.« less

OML: optical maskless lithography for economic design prototyping and small-volume production

NASA Astrophysics Data System (ADS)

Sandstrom, Tor; Bleeker, Arno; Hintersteiner, Jason; Troost, Kars; Freyer, Jorge; van der Mast, Karel

2004-05-01

The business case for Maskless Lithography is more compelling than ever before, due to more critical processes, rising mask costs and shorter product cycles. The economics of Maskless Lithography gives a crossover volume from Maskless to mask-based lithography at surprisingly many wafers per mask for surprisingly few wafers per hour throughput. Also, small-volume production will in many cases be more economical with Maskless Lithography, even when compared to "shuttle" schemes, reticles with multiple layers, etc. The full benefit of Maskless Lithography is only achievable by duplicating processes that are compatible with volume production processes on conventional scanners. This can be accomplished by the integration of pattern generators based on spatial light modulator technology with state-of-the-art optical scanner systems. This paper reports on the system design of an Optical Maskless Scanner in development by ASML and Micronic: small-field optics with high demagnification, variable NA and illumination schemes, spatial light modulators with millions of MEMS mirrors on CMOS drivers, a data path with a sustained data flow of more than 250 GPixels per second, stitching of sub-fields to scanner fields, and rasterization and writing strategies for throughput and good image fidelity. Predicted lithographic performance based on image simulations is also shown.

Development of nanoimprint lithography templates for the contact hole layer application (Conference Presentation)

NASA Astrophysics Data System (ADS)

Ichimura, Koji; Hikichi, Ryugo; Harada, Saburo; Kanno, Koichi; Kurihara, Masaaki; Hayashi, Naoya

2017-04-01

Nanoimprint lithography, NIL, is gathering much attention as one of the most potential candidates for the next generation lithography for semiconductor. This technology needs no pattern data modification for exposure, simpler exposure system, and single step patterning process without any coat/develop truck, and has potential of cost effective patterning rather than very complex optical lithography and/or EUV lithography. NIL working templates are made by the replication of the EB written high quality master templates. Fabrication of high resolution master templates is one of the most important issues. Since NIL is 1:1 pattern transfer process, master templates have 4 times higher resolution compared with photomasks. Another key is to maintain the quality of the master templates in replication process. NIL process is applied for the template replication and this imprint process determines most of the performance of the replicated templates. Expectations to the NIL are not only high resolution line and spaces but also the contact hole layer application. Conventional ArF-i lithography has a certain limit in size and pitch for contact hole fabrication. On the other hand, NIL has good pattern fidelity for contact hole fabrication at smaller sizes and pitches compared with conventional optical lithography. Regarding the tone of the templates for contact hole, there are the possibilities of both tone, the hole template and the pillar template, depending on the processes of the wafer side. We have succeeded to fabricate both types of templates at 2xnm in size. In this presentation, we will be discussing fabrication or our replica template for the contact hole layer application. Both tone of the template fabrication will be presented as well as the performance of the replica templates. We will also discuss the resolution improvement of the hole master templates by using various e-beam exposure technologies.

Theoretical study of fabrication of line-and-space patterns with 7 nm quarter-pitch using electron beam lithography with chemically amplified resist process: III. Post exposure baking on quartz substrates

NASA Astrophysics Data System (ADS)

Kozawa, Takahiro

2015-09-01

Electron beam (EB) lithography is a key technology for the fabrication of photomasks for ArF immersion and extreme ultraviolet (EUV) lithography and molds for nanoimprint lithography. In this study, the temporal change in the chemical gradient of line-and-space patterns with a 7 nm quarter-pitch (7 nm space width and 21 nm line width) was calculated until it became constant, independently of postexposure baking (PEB) time, to clarify the feasibility of single nano patterning on quartz substrates using EB lithography with chemically amplified resist processes. When the quencher diffusion constant is the same as the acid diffusion constant, the maximum chemical gradient of the line-and-space pattern with a 7 nm quarter-pitch did not differ much from that with a 14 nm half-pitch under the condition described above. Also, from the viewpoint of process control, a low quencher diffusion constant is considered to be preferable for the fabrication of line-and-space patterns with a 7 nm quarter-pitch on quartz substrates.

M&A For Lithography Of Sparse Arrays Of Sub-Micrometer Features

DOEpatents

Brueck, Steven R.J.; Chen, Xiaolan; Zaidi, Saleem; Devine, Daniel J.

1998-06-02

Methods and apparatuses are disclosed for the exposure of sparse hole and/or mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material. Methods disclosed include: double exposure interferometric lithography pairs in which only those areas near the overlapping maxima of each single-period exposure pair receive a clearing exposure dose; double interferometric lithography exposure pairs with additional processing steps to transfer the array from a first single-period interferometric lithography exposure pair into an intermediate mask layer and a second single-period interferometric lithography exposure to further select a subset of the first array of holes; a double exposure of a single period interferometric lithography exposure pair to define a dense array of sub-micrometer holes and an optical lithography exposure in which only those holes near maxima of both exposures receive a clearing exposure dose; combination of a single-period interferometric exposure pair, processing to transfer resulting dense array of sub-micrometer holes into an intermediate etch mask, and an optical lithography exposure to select a subset of initial array to form a sparse array; combination of an optical exposure, transfer of exposure pattern into an intermediate mask layer, and a single-period interferometric lithography exposure pair; three-beam interferometric exposure pairs to form sparse arrays of sub-micrometer holes; five- and four-beam interferometric exposures to form a sparse array of sub-micrometer holes in a single exposure. Apparatuses disclosed include arrangements for the three-beam, five-beam and four-beam interferometric exposures.

Micro-fabrication method of graphite mesa microdevices based on optical lithography technology

NASA Astrophysics Data System (ADS)

Zhang, Cheng; Wen, Donghui; Zhu, Huamin; Zhang, Xiaorui; Yang, Xing; Shi, Yunsheng; Zheng, Tianxiang

2017-12-01

Graphite mesa microdevices have incommensurate contact nanometer interfaces, superlubricity, high-speed self-retraction, and other characteristics, which have potential applications in high-performance oscillators and micro-scale switches, memory devices, and gyroscopes. However, the current method of fabricating graphite mesa microdevices is mainly based on high-cost, low efficiency electron beam lithography technology. In this paper, the processing technologies of graphite mesa microdevices with various shapes and sizes were investigated by a low-cost micro-fabrication method, which was mainly based on optical lithography technology. The characterization results showed that the optical lithography technology could realize a large-area of patterning on the graphite surface, and the graphite mesa microdevices, which have a regular shape, neat arrangement, and high verticality could be fabricated in large batches through optical lithography technology. The experiments and analyses showed that the graphite mesa microdevices fabricated through optical lithography technology basically have the same self-retracting characteristics as those fabricated through electron beam lithography technology, and the maximum size of the graphite mesa microdevices with self-retracting phenomenon can reach 10 µm  ×  10 µm. Therefore, the proposed method of this paper can realize the high-efficiency and low-cost processing of graphite mesa microdevices, which is significant for batch fabrication and application of graphite mesa microdevices.

An investigation on defect-generation conditions in immersion lithography

NASA Astrophysics Data System (ADS)

Tomita, Tadatoshi; Shimoaoki, Takeshi; Enomoto, Masashi; Kyoda, Hideharu; Kitano, Junichi; Suganaga, Toshifumi

2006-03-01

As a powerful candidate for a lithography technique that can accommodate the scaling-down of semiconductors, 193-nm immersion lithography-which realizes a high numerical aperture (NA) and uses deionized water as the medium between the lens and wafer in the exposure system-has been developing at a rapid pace and has reached the stage of practical application. In regards to defects that are a cause for concern in the case of 193-nm immersion lithography, however, many components are still unclear and many problems remain to be solved. It has been pointed out, for example, that in the case of 193-nm immersion lithography, immersion of the resist film in deionized water during exposure causes infiltration of moisture into the resist film, internal components of the resist dissolve into the deionized water, and residual water generated during exposure affects post-processing. Moreover, to prevent this influence of directly immersing the resist in de-ionized water, application of a protective film is regarded as effective. However, even if such a film is applied, it is still highly likely that the above-mentioned defects will still occur. Accordingly, to reduce these defects, it is essential to identify the typical defects occurring in 193-nm immersion lithography and to understand the condition for generation of defects by using some kinds of protective films and resist materials. Furthermore, from now onwards, with further scaling down of semiconductors, it is important to maintain a clear understanding of the relation between defect-generation conditions and critical dimensions (CD). Aiming to extract typical defects occurring in 193-nm immersion lithography, the authors carried out a comparative study with dry exposure lithography, thereby confirming several typical defects associated with immersion lithography. We then investigated the conditions for generation of defects in the case of some kinds of protective films. In addition to that, by investigating the defect-generation conditions and comparing the classification data between wet and dry exposure, we were able to determine the origin of each particular defect involved in immersion lithography. Furthermore, the comparison of CD for wet and dry processing could indicate the future defectivity levels to be expected with shrinking immersion process critical dimensions.

Microsystems Research in Japan

DTIC Science & Technology

2003-09-01

microsystems applications, like microfluidic systems, will require more than planar lithography -based fabrication processes. The committee was impressed by the...United States focused on exploiting silicon planar lithography as the core technology for microstructure fabrication, whereas Japan explored a wide...including LIGA and its extensions, micro-stereolithography, and e-beam lithography . The range of materials seen in Japan was broader than in the

CHAM: weak signals detection through a new multivariate algorithm for process control

NASA Astrophysics Data System (ADS)

Bergeret, François; Soual, Carole; Le Gratiet, B.

2016-10-01

Derivatives technologies based on core CMOS processes are significantly aggressive in term of design rules and process control requirements. Process control plan is a derived from Process Assumption (PA) calculations which result in a design rule based on known process variability capabilities, taking into account enough margin to be safe not only for yield but especially for reliability. Even though process assumptions are calculated with a 4 sigma known process capability margin, efficient and competitive designs are challenging the process especially for derivatives technologies in 40 and 28nm nodes. For wafer fab process control, PA are declined in monovariate (layer1 CD, layer2 CD, layer2 to layer1 overlay, layer3 CD etc….) control charts with appropriated specifications and control limits which all together are securing the silicon. This is so far working fine but such system is not really sensitive to weak signals coming from interactions of multiple key parameters (high layer2 CD combined with high layer3 CD as an example). CHAM is a software using an advanced statistical algorithm specifically designed to detect small signals, especially when there are many parameters to control and when the parameters can interact to create yield issues. In this presentation we will first present the CHAM algorithm, then the case-study on critical dimensions, with the results, and we will conclude on future work. This partnership between Ippon and STM is part of E450LMDAP, European project dedicated to metrology and lithography development for future technology nodes, especially 10nm.

ArF halftone PSM cleaning process optimization for next-generation lithography

NASA Astrophysics Data System (ADS)

Son, Yong-Seok; Jeong, Seong-Ho; Kim, Jeong-Bae; Kim, Hong-Seok

2000-07-01

ArF lithography which is expected for the next generation optical lithography is adapted for 0.13 micrometers design-rule and beyond. ArF half-tone phase shift mask (HT PSM) will be applied as 1st generation of ArF lithography. Also ArF PSM cleaning demands by means of tighter controls related to phase angle, transmittance and contamination on the masks. Phase angle on ArF HT PSM should be controlled within at least +/- 3 degree and transmittance controlled within at least +/- 3 percent after cleaning process and pelliclization. In the cleaning process of HT PSM, requires not only the remove the particle on mask, but also control to half-tone material for metamorphosis. Contamination defects on the Qz of half tone type PSM is not easy to remove on the photomask surface. New technology and methods of cleaning will be developed in near future, but we try to get out for limit contamination on the mask, without variation of phase angle and transmittance after cleaning process.

A study of an alignment-less lithography method as an educational resource

NASA Astrophysics Data System (ADS)

Kai, Kazuho; Shiota, Koki; Nagaoka, Shiro; Mahmood, Mohamad Rusop Bin Haji; Kawai, Akira

2016-07-01

A simplification of the lithography process was studied. The simplification method of photolithography, named "alignment-less lithography" was proposed by omitting the photomask alignment process in photolithography process using mechanically aligned photomasks and substrate by using a simple jig on which countersinks were formed. Photomasks made of glass and the photomasks made of transparent plastic sheets were prepared for the process. As the result, approximately 5µm in the case of the glass mask, and 20µm in the case of the OHP mask were obtained with repetitive accuracies, respectively. It was confirmed that the alignment-less lithography method was successful. The possibility of the application to an educational program, such as a heuristic for solving problems was suggested using the method with the OHP mask. The nMOS FET fabrication process was successfully demonstrated using this method. The feasibility of this process was confirmed. It is expected that a totally simplified device fabrication process can be achievable when combined with other simplifications, such ass the simplified impurity diffusion processes using PSG and BSG thin film as diffusion source prepared by the Sol-Gel material under normal air environment.

Combination photo and electron beam lithography with polymethyl methacrylate (PMMA) resist.

PubMed

Carbaugh, Daniel J; Pandya, Sneha G; Wright, Jason T; Kaya, Savas; Rahman, Faiz

2017-11-10

We describe techniques for performing photolithography and electron beam lithography in succession on the same resist-covered substrate. Larger openings are defined in the resist film through photolithography whereas smaller openings are defined through conventional electron beam lithography. The two processes are carried out one after the other and without an intermediate wet development step. At the conclusion of the two exposures, the resist film is developed once to reveal both large and small openings. Interestingly, these techniques are applicable to both positive and negative tone lithographies with both optical and electron beam exposure. Polymethyl methacrylate, by itself or mixed with a photocatalytic cross-linking agent, is used for this purpose. We demonstrate that such resists are sensitive to both ultraviolet and electron beam irradiation. All four possible combinations, consisting of optical and electron beam lithographies, carried out in positive and negative tone modes have been described. Demonstration grating structures have been shown and process conditions have been described for all four cases.

Extension of optical lithography by mask-litho integration with computational lithography

NASA Astrophysics Data System (ADS)

Takigawa, T.; Gronlund, K.; Wiley, J.

2010-05-01

Wafer lithography process windows can be enlarged by using source mask co-optimization (SMO). Recently, SMO including freeform wafer scanner illumination sources has been developed. Freeform sources are generated by a programmable illumination system using a micro-mirror array or by custom Diffractive Optical Elements (DOE). The combination of freeform sources and complex masks generated by SMO show increased wafer lithography process window and reduced MEEF. Full-chip mask optimization using source optimized by SMO can generate complex masks with small variable feature size sub-resolution assist features (SRAF). These complex masks create challenges for accurate mask pattern writing and low false-defect inspection. The accuracy of the small variable-sized mask SRAF patterns is degraded by short range mask process proximity effects. To address the accuracy needed for these complex masks, we developed a highly accurate mask process correction (MPC) capability. It is also difficult to achieve low false-defect inspections of complex masks with conventional mask defect inspection systems. A printability check system, Mask Lithography Manufacturability Check (M-LMC), is developed and integrated with 199-nm high NA inspection system, NPI. M-LMC successfully identifies printable defects from all of the masses of raw defect images collected during the inspection of a complex mask. Long range mask CD uniformity errors are compensated by scanner dose control. A mask CD uniformity error map obtained by mask metrology system is used as input data to the scanner. Using this method, wafer CD uniformity is improved. As reviewed above, mask-litho integration technology with computational lithography is becoming increasingly important.

Eco-friendly electron beam lithography using water-developable resist material derived from biomass

NASA Astrophysics Data System (ADS)

Takei, Satoshi; Oshima, Akihiro; Wakabayashi, Takanori; Kozawa, Takahiro; Tagawa, Seiichi

2012-07-01

We investigated the eco-friendly electron beam (EB) lithography using a high-sensitive negative type of water-developable resist material derived from biomass on hardmask layer for tri-layer processes. A water developable, non-chemically amplified, high sensitive, and negative tone resist material in EB lithography was developed for environmental affair, safety, easiness of handling, and health of the working people, instead of the common developable process of trimethylphenylammonium hydroxide. The images of 200 nm line and 800 nm space pattern with exposure dose of 7.0 μC/cm2 and CF4 etching selectivity of 2.2 with hardmask layer were provided by specific process conditions.

Nanoparticle photoresist studies for EUV lithography

NASA Astrophysics Data System (ADS)

Kasahara, Kazuki; Xu, Hong; Kosma, Vasiliki; Odent, Jeremy; Giannelis, Emmanuel P.; Ober, Christopher K.

2017-03-01

EUV (extreme ultraviolet) lithography is one of the most promising candidates for next generation lithography. The main challenge for EUV resists is to simultaneously satisfy resolution, LWR (line-width roughness) and sensitivity requirements according to the ITRS roadmap. Though polymer type CAR (chemically amplified resist) is the currently standard photoresist, entirely new resist platforms are required due to the performance targets of smaller process nodes. In this paper, recent progress in nanoparticle photoresists which Cornell University has intensely studied is discussed. Lithography performance, especially scum elimination, improvement studies with the dissolution rate acceleration concept and new metal core applications are described.

Effect of wafer geometry on lithography chucking processes

NASA Astrophysics Data System (ADS)

Turner, Kevin T.; Sinha, Jaydeep K.

2015-03-01

Wafer flatness during exposure in lithography tools is critical and is becoming more important as feature sizes in devices shrink. While chucks are used to support and flatten the wafer during exposure, it is essential that wafer geometry be controlled as well. Thickness variations of the wafer and high-frequency wafer shape components can lead to poor flatness of the chucked wafer and ultimately patterning problems, such as defocus errors. The objective of this work is to understand how process-induced wafer geometry, resulting from deposited films with non-uniform stress, can lead to high-frequency wafer shape variations that prevent complete chucking in lithography scanners. In this paper, we discuss both the acceptable limits of wafer shape that permit complete chucking to be achieved, and how non-uniform residual stresses in films, either due to patterning or process non-uniformity, can induce high spatial frequency wafer shape components that prevent chucking. This paper describes mechanics models that relate non-uniform film stress to wafer shape and presents results for two example cases. The models and results can be used as a basis for establishing control strategies for managing process-induced wafer geometry in order to avoid wafer flatness-induced errors in lithography processes.

EUVL masks: paving the path for commercialization

NASA Astrophysics Data System (ADS)

Mangat, Pawitter J. S.; Hector, Scott D.

2001-09-01

Optical projection lithography has been the principal vehicle of semiconductor manufacturing for more than 20 years and is marching aggressively to satisfy the needs of semiconductor manufacturers for 100nm devices. However, the complexity of optical lithography continues to increase as wavelength reduction continues to 157nm. Extreme Ultraviolet Lithography (EUVL), with wavelength from 13-14 nm, is evolving as a leading next generation lithography option for semiconductor industry to stay on the path laid by Moore's Law. Masks are a critical part of the success of any technology and are considered to be high risk both for optical lithography and NGL technologies for sub-100nm lithography. Two key areas of EUV mask fabrication are reflective multilayer deposition and absorber patterning. In the case of reflective multilayers, delivering defect free multilayers for mask blanks is the biggest challenge. Defect mitigation is being explored as a possible option to smooth the multilayer defects in addition to optimization of the deposition process to reduce defect density. The mask patterning process needs focus on the defect-free absorber stack patterning process, mask cleaning, inspection and repair. In addition, there is considerable effort to understand by simulations, the defect printability, thermal and mechanical distortions, and non-telecentric illumination, to mention a few. To protect the finished mask from defects added during use, a removable pellicle strategy combined with thermophoretic protection during exposure is being developed. Recent migration to square form factor using low thermal expansion material (LTEM) is advantageous as historical developments in optical masks can be applied to EUV mask patterning. This paper addresses recent developments in the EUV mask patterning and highlights critical manufacturing process controls needed to fabricate defect-free full field masks with CD and image placement specifications for sub-70nm node lithography. No technology can be implemented without establishing the commercial infrastructure. The rising cost seems to be a major issue affecting the technology development. With respect to mask fabrication for commercial availability, a virtual mask shop analysis is presented that indicates that the process cost for EUVL masks are comparable to the high end optical mask with a reasonable yield. However, the cost for setting up a new mask facility is considerably high.

Drawing lithography for microneedles: a review of fundamentals and biomedical applications.

PubMed

Lee, Kwang; Jung, Hyungil

2012-10-01

A microneedle is a three-dimensional (3D) micromechanical structure and has been in the spotlight recently as a drug delivery system (DDS). Because a microneedle delivers the target drug after penetrating the skin barrier, the therapeutic effects of microneedles proceed from its 3D structural geometry. Various types of microneedles have been fabricated using subtractive micromanufacturing methods which are based on the inherently planar two-dimensional (2D) geometries. However, traditional subtractive processes are limited for flexible structural microneedles and makes functional biomedical applications for efficient drug delivery difficult. The authors of the present study propose drawing lithography as a unique additive process for the fabrication of a microneedle directly from 2D planar substrates, thus overcoming a subtractive process shortcoming. The present article provides the first overview of the principal drawing lithography technology: fundamentals and biomedical applications. The continuous drawing technique for an ultrahigh-aspect ratio (UHAR) hollow microneedle, stepwise controlled drawing technique for a dissolving microneedle, and drawing technique with antidromic isolation for a hybrid electro-microneedle (HEM) are reviewed, and efficient biomedical applications by drawing lithography-mediated microneedles as an innovative drug and gene delivery system are described. Drawing lithography herein can provide a great breakthrough in the development of materials science and biotechnology. Copyright © 2012 Elsevier Ltd. All rights reserved.

In-Process Atomic-Force Microscopy (AFM) Based Inspection

PubMed Central

Mekid, Samir

2017-01-01

A new in-process atomic-force microscopy (AFM) based inspection is presented for nanolithography to compensate for any deviation such as instantaneous degradation of the lithography probe tip. Traditional method used the AFM probes for lithography work and retract to inspect the obtained feature but this practice degrades the probe tip shape and hence, affects the measurement quality. This paper suggests a second dedicated lithography probe that is positioned back-to-back to the AFM probe under two synchronized controllers to correct any deviation in the process compared to specifications. This method shows that the quality improvement of the nanomachining, in progress probe tip wear, and better understanding of nanomachining. The system is hosted in a recently developed nanomanipulator for educational and research purposes. PMID:28561747

Nanofabrication on unconventional substrates using transferred hard masks

DOE PAGES

Li, Luozhou; Bayn, Igal; Lu, Ming; ...

2015-01-15

Here, a major challenge in nanofabrication is to pattern unconventional substrates that cannot be processed for a variety of reasons, such as incompatibility with spin coating, electron beam lithography, optical lithography, or wet chemical steps. Here, we present a versatile nanofabrication method based on re-usable silicon membrane hard masks, patterned using standard lithography and mature silicon processing technology. These masks, transferred precisely onto targeted regions, can be in the millimetre scale. They allow for fabrication on a wide range of substrates, including rough, soft, and non-conductive materials, enabling feature linewidths down to 10 nm. Plasma etching, lift-off, and ion implantationmore » are realized without the need for scanning electron/ion beam processing, UV exposure, or wet etching on target substrates.« less

EUV lithography using water-developable resist material derived from biomass

NASA Astrophysics Data System (ADS)

Takei, Satoshi; Oshima, Akihiro; Oyama, Tomoko G.; Ichikawa, Takumi; Sekiguchi, Atsushi; Kashiwakura, Miki; Kozawa, Takahiro; Tagawa, Seiichi

2013-03-01

A water-developable resist material which had specific desired properties such as high sensitivity of 5.0 μC/cm2, thermal stability of 160 °C, suitable calculated linear absorption coefficients of 13.5 nm, and acceptable CF4 etch selectivity was proposed using EB lithography for EUV lithography. A water developable resist material derived from biomass is expected for non-petroleum resources, environmental affair, safety, easiness of handling, and health of the working people, instead of the common developable process of trimethylphenylammonium hydroxide. 100 nm line and 400 nm space patterning images with exposure dose of 5.0 μC/cm2 were provided by specific process conditions of EB lithography. The developed trehalose derivatives with hydroxyl groups and EB sensitive groups in the water-developable resist material derived from biomass were applicable to future development of high-sensitive and resolution negative type of water-developable resist material as a novel chemical design.

High-sensitivity green resist material with organic solvent-free spin-coating and tetramethylammonium hydroxide-free water-developable processes for EB and EUV lithography

NASA Astrophysics Data System (ADS)

Takei, Satoshi; Hanabata, Makoto; Oshima, Akihiro; Kashiwakura, Miki; Kozawa, Takahiro; Tagawa, Seiichi

2015-03-01

We investigated the eco-friendly electron beam (EB) and extreme-ultraviolet (EUV) lithography using a high-sensitive negative type of green resist material derived from biomass to take advantage of organic solvent-free water spin-coating and tetramethylammonium hydroxide(TMAH)-free water-developable techniques. A water developable, non-chemically amplified, high sensitive, and negative tone resist material in EB lithography was developed for environmental affair, safety, easiness of handling, and health of the working people, instead of the common developable process of TMAH. The material design concept to use the water-soluble resist material with acceptable properties such as pillar patterns with less than 100 nm in high EB sensitivity of 10 μC/cm2 and etch selectivity with a silicon-based middle layer in CF4 plasma treatment was demonstrated for EB and EUV lithography.

Novel Processes for Modular Integration of Silicon-Germanium MEMS with CMOS Electronics

DTIC Science & Technology

2007-02-28

process limits the compatibility with further lithography steps. Using silicon as the MEMS structural material, most of the integration processes...structures are defined by lithography and deep reactive ion etching. A layer of gasket oxide is deposited as the sacrificial material between the...When the Bragg condition for constructive interference is obtained, a diffraction peak is produced and the relative peak height is proportional to

All-optical lithography process for contacting nanometer precision donor devices

NASA Astrophysics Data System (ADS)

Ward, D. R.; Marshall, M. T.; Campbell, D. M.; Lu, T. M.; Koepke, J. C.; Scrymgeour, D. A.; Bussmann, E.; Misra, S.

2017-11-01

We describe an all-optical lithography process that can make electrical contact to nanometer-precision donor devices fabricated in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process.

All-optical lithography process for contacting nanometer precision donor devices

DOE PAGES

Ward, Daniel Robert; Marshall, Michael Thomas; Campbell, DeAnna Marie; ...

2017-11-06

In this article, we describe an all-optical lithography process that can make electrical contact to nanometer-precision donor devices fabricated in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process.

All-optical lithography process for contacting nanometer precision donor devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ward, Daniel Robert; Marshall, Michael Thomas; Campbell, DeAnna Marie

In this article, we describe an all-optical lithography process that can make electrical contact to nanometer-precision donor devices fabricated in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process.

Implementation and benefits of advanced process control for lithography CD and overlay

NASA Astrophysics Data System (ADS)

Zavyalova, Lena; Fu, Chong-Cheng; Seligman, Gary S.; Tapp, Perry A.; Pol, Victor

2003-05-01

Due to the rapidly reduced imaging process windows and increasingly stingent device overlay requirements, sub-130 nm lithography processes are more severely impacted than ever by systamic fault. Limits on critical dimensions (CD) and overlay capability further challenge the operational effectiveness of a mix-and-match environment using multiple lithography tools, as such mode additionally consumes the available error budgets. Therefore, a focus on advanced process control (APC) methodologies is key to gaining control in the lithographic modules for critical device levels, which in turn translates to accelerated yield learning, achieving time-to-market lead, and ultimately a higher return on investment. This paper describes the implementation and unique challenges of a closed-loop CD and overlay control solution in high voume manufacturing of leading edge devices. A particular emphasis has been placed on developing a flexible APC application capable of managing a wide range of control aspects such as process and tool drifts, single and multiple lot excursions, referential overlay control, 'special lot' handling, advanced model hierarchy, and automatic model seeding. Specific integration cases, including the multiple-reticle complementary phase shift lithography process, are discussed. A continuous improvement in the overlay and CD Cpk performance as well as the rework rate has been observed through the implementation of this system, and the results are studied.

Novel EUV photoresist for sub-7nm node (Conference Presentation)

NASA Astrophysics Data System (ADS)

Furukawa, Tsuyoshi; Naruoka, Takehiko; Nakagawa, Hisashi; Miyata, Hiromu; Shiratani, Motohiro; Hori, Masafumi; Dei, Satoshi; Ayothi, Ramakrishnan; Hishiro, Yoshi; Nagai, Tomoki

2017-04-01

Extreme ultraviolet (EUV) lithography has been recognized as a promising candidate for the manufacturing of semiconductor devices as LS and CH pattern for 7nm node and beyond. EUV lithography is ready for high volume manufacturing stage. For the high volume manufacturing of semiconductor devices, significant improvement of sensitivity and line edge roughness (LWR) and Local CD Uniformity (LCDU) is required for EUV resist. It is well-known that the key challenge for EUV resist is the simultaneous requirement of ultrahigh resolution (R), low line edge roughness (L) and high sensitivity (S). Especially high sensitivity and good roughness is important for EUV lithography high volume manufacturing. We are trying to improve sensitivity and LWR/LCDU from many directions. From material side, we found that both sensitivity and LWR/LCDU are simultaneously improved by controlling acid diffusion length and efficiency of acid generation using novel resin and PAG. And optimizing EUV integration is one of the good solution to improve sensitivity and LWR/LCDU. We are challenging to develop new multi-layer materials to improve sensitivity and LWR/LCDU. Our new multi-layer materials are designed for best performance in EUV lithography system. From process side, we found that sensitivity was substantially improved maintaining LWR applying novel type of chemical amplified resist (CAR) and process. EUV lithography evaluation results obtained for new CAR EUV interference lithography. And also metal containing resist is one possibility to break through sensitivity and LWR trade off. In this paper, we will report the recent progress of sensitivity and LWR/LCDU improvement of JSR novel EUV resist and process.

System design considerations for a production-grade, ESR-based x-ray lithography beamline

NASA Astrophysics Data System (ADS)

Kovacs, Stephen; Melore, Dan; Cerrina, Franco; Cole, Richard K.

1991-08-01

As electron storage ring (ESR) based x-ray lithography technology moves closer to becoming an industrial reality, more and more attention has been devoted to studying problem areas related to its application in the production environment. A principle component is the x-ray lithography beamline (XLBL) and its associated design requirements. XLBL, an x-ray radiation transport system, is one of the three major subunits in the ESR-based x-ray lithography system (XLS) and has a pivotal role in defining performance characteristics of the entire XLS. Its major functions are to transport the synchrotron orbital radiation (SOR) to the lithography target area with defined efficiency and to modify SOR into the spectral distribution defined by the lithography process window. These functions must be performed reliably in order to satisfy the required high production rate and ensure 0.25 micron resolution lithography conditions. In this paper the authors attempt to answer some specific questions that arise during the formulation of an XLBL system design. Three principle issues that are essential to formulating a design are (1) Radiation transport efficiency, (2) X-ray optical configurations in the beamline, (3) Beamline system configurations. Some practical solutions to thee problem areas are presented, and the effects of these parameters on lithography production rate are examined.

Electron Beam/Optical Hybrid Lithography For The Production Of Gallium Arsenide Monolithic Microwave Integrated Circuits (Mimics)

NASA Astrophysics Data System (ADS)

Nagarajan, Rao M.; Rask, Steven D.

1988-06-01

A hybrid lithography technique is described in which selected levels are fabricated by high resolution direct write electron beam lithography and all other levels are fabricated optically. This technique permits subhalf micron geometries and the site-by-site alignment for each field written by electron beam lithography while still maintaining the high throughput possible with optical lithography. The goal is to improve throughput and reduce overall cost of fabricating MIMIC GaAS chips without compromising device performance. The lithography equipment used for these experiments is the Cambridge Electron beam vector scan system EBMF 6.4 capable of achieving ultra high current densities with a beam of circular cross section and a gaussian intensity profile operated at 20 kev. The optical aligner is a Karl Suss Contact aligner. The flexibility of the Cambridge electron beam system is matched to the less flexible Karl Suss contact aligner. The lithography related factors, such as image placement, exposure and process related analyses, which influence overlay, pattern quality and performance, are discussed. A process chip containing 3.2768mm fields in an eleven by eleven array was used for alignment evaluation on a 3" semi-insulating GaAS wafer. Each test chip contained five optical verniers and four Prometrix registration marks per field along with metal bumps for alignment marks. The process parameters for these chips are identical to those of HEMT/epi-MESFET ohmic contact and gate layer processes. These layers were used to evaluate the overlay accuracy because of their critical alignment and dimensional control requirements. Two cases were examined: (1) Electron beam written gate layers aligned to optically imaged ohmic contact layers and (2) Electron beam written gate layers aligned to electron beam written ohmic contact layers. The effect of substrate charging by the electron beam is also investigated. The resulting peak overlay error accuracies are: (1) Electron beam to optical with t 0.2μm (2 sigma) and (2) Electron beam to electron beam with f 0.lμm (2 sigma). These results suggest that the electron beam/optical hybrid lithography techniques could be used for MIMIC volume production as alignment tolerances required by GaAS chips are met in both cases. These results are discussed in detail.

Finding the right way: DFM versus area efficiency for 65 nm gate layer lithography

NASA Astrophysics Data System (ADS)

Sarma, Chandra S.; Scheer, Steven; Herold, Klaus; Fonseca, Carlos; Thomas, Alan; Schroeder, Uwe P.

2006-03-01

DFM (Design for Manufacturing) has become a buzzword for lithography since the 90nm node. Implementing DFM intelligently can boost yield rates and reliability in semiconductor manufacturing significantly. However, any restriction on the design space will always result in an area loss, thus diminishing the effective shrink factor for a given technology. For a lithographer, the key task is to develop a manufacturable process, while not sacrificing too much area. We have developed a high performing lithography process for attenuated gate level lithography that is based on aggressive illumination and a newly optimized SRAF placement schemes. In this paper we present our methodology and results for this optimization, using an anchored simulation model. The wafer results largely confirm the predictions of the simulations. The use of aggressive SRAF (Sub Resolution Assist Features) strategy leads to reduction of forbidden pitch regions without any SRAF printing. The data show that our OPC is capable of correcting the PC tip to tip distance without bridging between the tips in dense SRAM cells. SRAF strategy for various 2D cases has also been verified on wafer. We have shown that aggressive illumination schemes yielding a high performing lithography process can be employed without sacrificing area. By carefully choosing processing conditions, we were able develop a process that has very little restrictions for design. In our approach, the remaining issues can be addressed by DFM, partly in data prep procedures, which are largely area neutral and transparent to the designers. Hence, we have shown successfully, that DFM and effective technology shrinks are not mutually exclusive.

Lithography for enabling advances in integrated circuits and devices.

PubMed

Garner, C Michael

2012-08-28

Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing.

A combined electron beam/optical lithography process step for the fabrication of sub-half-micron-gate-length MMIC chips

NASA Technical Reports Server (NTRS)

Sewell, James S.; Bozada, Christopher A.

1994-01-01

Advanced radar and communication systems rely heavily on state-of-the-art microelectronics. Systems such as the phased-array radar require many transmit/receive (T/R) modules which are made up of many millimeter wave - microwave integrated circuits (MMIC's). The heart of a MMIC chip is the Gallium Arsenide (GaAs) field-effect transistor (FET). The transistor gate length is the critical feature that determines the operating frequency of the radar system. A smaller gate length will typically result in a higher frequency. In order to make a phased array radar system economically feasible, manufacturers must be capable of producing very large quantities of small-gate-length MMIC chips at a relatively low cost per chip. This requires the processing of a large number of wafers with a large number of chips per wafer, minimum processing time, and a very high chip yield. One of the bottlenecks in the fabrication of MIMIC chips is the transistor gate definition. The definition of sub-half-micron gates for GaAs-based field-effect transistors is generally performed by direct-write electron beam lithography (EBL). Because of the throughput limitations of EBL, the gate-layer fabrication is conventionally divided into two lithographic processes where EBL is used to generate the gate fingers and optical lithography is used to generate the large-area gate pads and interconnects. As a result, two complete sequences of resist application, exposure, development, metallization and lift-off are required for the entire gate structure. We have baselined a hybrid process, referred to as EBOL (electron beam/optical lithography), in which a single application of a multi-level resist is used for both exposures. The entire gate structure, (gate fingers, interconnects and pads), is then formed with a single metallization and lift-off process. The EBOL process thus retains the advantages of the high-resolution E-beam lithography and the high throughput of optical lithography while essentially eliminating an entire lithography/metallization/lift-off process sequence. This technique has been proven to be reliable for both trapezoidal and mushroom gates and has been successfully applied to metal-semiconductor and high-electron-mobility field-effect transistor (MESFET and HEMT) wafers containing devices with gate lengths down to 0.10 micron and 75 x 75 micron gate pads. The yields and throughput of these wafers have been very high with no loss in device performance. We will discuss the entire EBOL process technology including the multilayer resist structure, exposure conditions, process sensitivities, metal edge definition, device results, comparison to the standard gate-layer process, and its suitability for manufacturing.

A combined electron beam/optical lithography process step for the fabrication of sub-half-micron-gate-length MMIC chips

NASA Astrophysics Data System (ADS)

Sewell, James S.; Bozada, Christopher A.

1994-02-01

Advanced radar and communication systems rely heavily on state-of-the-art microelectronics. Systems such as the phased-array radar require many transmit/receive (T/R) modules which are made up of many millimeter wave - microwave integrated circuits (MMIC's). The heart of a MMIC chip is the Gallium Arsenide (GaAs) field-effect transistor (FET). The transistor gate length is the critical feature that determines the operating frequency of the radar system. A smaller gate length will typically result in a higher frequency. In order to make a phased array radar system economically feasible, manufacturers must be capable of producing very large quantities of small-gate-length MMIC chips at a relatively low cost per chip. This requires the processing of a large number of wafers with a large number of chips per wafer, minimum processing time, and a very high chip yield. One of the bottlenecks in the fabrication of MIMIC chips is the transistor gate definition. The definition of sub-half-micron gates for GaAs-based field-effect transistors is generally performed by direct-write electron beam lithography (EBL). Because of the throughput limitations of EBL, the gate-layer fabrication is conventionally divided into two lithographic processes where EBL is used to generate the gate fingers and optical lithography is used to generate the large-area gate pads and interconnects. As a result, two complete sequences of resist application, exposure, development, metallization and lift-off are required for the entire gate structure. We have baselined a hybrid process, referred to as EBOL (electron beam/optical lithography), in which a single application of a multi-level resist is used for both exposures. The entire gate structure, (gate fingers, interconnects and pads), is then formed with a single metallization and lift-off process. The EBOL process thus retains the advantages of the high-resolution E-beam lithography and the high throughput of optical lithography while essentially eliminating an entire lithography/metallization/lift-off process sequence. This technique has been proven to be reliable for both trapezoidal and mushroom gates and has been successfully applied to metal-semiconductor and high-electron-mobility field-effect transistor (MESFET and HEMT) wafers containing devices with gate lengths down to 0.10 micron and 75 x 75 micron gate pads. The yields and throughput of these wafers have been very high with no loss in device performance. We will discuss the entire EBOL process technology including the multilayer resist structure, exposure conditions, process sensitivities, metal edge definition, device results, comparison to the standard gate-layer process, and its suitability for manufacturing.

Ion beam lithography system

DOEpatents

Leung, Ka-Ngo

2005-08-02

A maskless plasma-formed ion beam lithography tool provides for patterning of sub-50 nm features on large area flat or curved substrate surfaces. The system is very compact and does not require an accelerator column and electrostatic beam scanning components. The patterns are formed by switching beamlets on or off from a two electrode blanking system with the substrate being scanned mechanically in one dimension. This arrangement can provide a maskless nano-beam lithography tool for economic and high throughput processing.

Optical force stamping lithography

PubMed Central

Nedev, Spas; Urban, Alexander S.; Lutich, Andrey A.; Feldmann, Jochen

2013-01-01

Here we introduce a new paradigm of far-field optical lithography, optical force stamping lithography. The approach employs optical forces exerted by a spatially modulated light field on colloidal nanoparticles to rapidly stamp large arbitrary patterns comprised of single nanoparticles onto a substrate with a single-nanoparticle positioning accuracy well beyond the diffraction limit. Because the process is all-optical, the stamping pattern can be changed almost instantly and there is no constraint on the type of nanoparticle or substrates used. PMID:21992538

LENS (lithography enhancement toward nano scale): a European project to support double exposure and double patterning technology development

NASA Astrophysics Data System (ADS)

Cantu, Pietro; Baldi, Livio; Piacentini, Paolo; Sytsma, Joost; Le Gratiet, Bertrand; Gaugiran, Stéphanie; Wong, Patrick; Miyashita, Hiroyuki; Atzei, Luisa R.; Buch, Xavier; Verkleij, Dick; Toublan, Olivier; Perez-Murano, Francesco; Mecerreyes, David

2010-04-01

In 2009 a new European initiative on Double Patterning and Double Exposure lithography process development was started in the framework of the ENIAC Joint Undertaking. The project, named LENS (Lithography Enhancement Towards Nano Scale), involves twelve companies from five different European Countries (Italy, Netherlands, France, Belgium Spain; includes: IC makers (Numonyx and STMicroelectronics), a group of equipment and materials companies (ASML, Lam Research srl, JSR, FEI), a mask maker (Dai Nippon Photomask Europe), an EDA company (Mentor Graphics) and four research and development institutes (CEA-Leti, IMEC, Centro Nacional de Microelectrónica, CIDETEC). The LENS project aims to develop and integrate the overall infrastructure required to reach patterning resolutions required by 32nm and 22nm technology nodes through the double patterning and pitch doubling technologies on existing conventional immersion exposure tools, with the purpose to allow the timely development of 32nm and 22nm technology nodes for memories and logic devices, providing a safe alternative to EUV, Higher Refraction Index Fluids Immersion Lithography and maskless lithography, which appear to be still far from maturity. The project will cover the whole lithography supply chain including design, masks, materials, exposure tools, process integration, metrology and its final objective is the demonstration of 22nm node patterning on available 1.35 NA immersion tools on high complexity mask set.

450mm wafer patterning with jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Thompson, Ecron; Hellebrekers, Paul; Hofemann, Paul; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

2013-09-01

The next step in the evolution of wafer size is 450mm. Any transition in sizing is an enormous task that must account for fabrication space, environmental health and safety concerns, wafer standards, metrology capability, individual process module development and device integration. For 450mm, an aggressive goal of 2018 has been set, with pilot line operation as early as 2016. To address these goals, consortiums have been formed to establish the infrastructure necessary to the transition, with a focus on the development of both process and metrology tools. Central to any process module development, which includes deposition, etch and chemical mechanical polishing is the lithography tool. In order to address the need for early learning and advance process module development, Molecular Imprints Inc. has provided the industry with the first advanced lithography platform, the Imprio® 450, capable of patterning a full 450mm wafer. The Imprio 450 was accepted by Intel at the end of 2012 and is now being used to support the 450mm wafer process development demands as part of a multi-year wafer services contract to facilitate the semiconductor industry's transition to lower cost 450mm wafer production. The Imprio 450 uses a Jet and Flash Imprint Lithography (J-FILTM) process that employs drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for markets including NAND Flash memory, patterned media for hard disk drives and displays. This paper reviews the recent performance of the J-FIL technology (including overlay, throughput and defectivity), mask development improvements provided by Dai Nippon Printing, and the application of the technology to a 450mm lithography platform.

Inverse Tomo-Lithography for Making Microscopic 3D Parts

NASA Technical Reports Server (NTRS)

White, Victor; Wiberg, Dean

2003-01-01

According to a proposal, basic x-ray lithography would be extended to incorporate a technique, called inverse tomography, that would enable the fabrication of microscopic three-dimensional (3D) objects. The proposed inverse tomo-lithographic process would make it possible to produce complex shaped, submillimeter-sized parts that would be difficult or impossible to make in any other way. Examples of such shapes or parts include tapered helices, paraboloids with axes of different lengths, and even Archimedean screws that could serve as rotors in microturbines. The proposed inverse tomo-lithographic process would be based partly on a prior microfabrication process known by the German acronym LIGA (lithographie, galvanoformung, abformung, which means lithography, electroforming, molding). In LIGA, one generates a precise, high-aspect ratio pattern by exposing a thick, x-ray-sensitive resist material to an x-ray beam through a mask that contains the pattern. One can electrodeposit metal into the developed resist pattern to form a precise metal part, then dissolve the resist to free the metal. Aspect ratios of 100:1 and patterns into resist thicknesses of several millimeters are possible.

Design and development of next-generation bottom anti-reflective coatings for 45nm process with hyper NA lithography

NASA Astrophysics Data System (ADS)

Nakajima, Makoto; Sakaguchi, Takahiro; Hashimoto, Keisuke; Sakamoto, Rikimaru; Kishioka, Takahiro; Takei, Satoshi; Enomoto, Tomoyuki; Nakajima, Yasuyuki

2006-03-01

Integrated circuit manufacturers are consistently seeking to minimize device feature dimensions in order to reduce chip size and increase integration level. Feature sizes on chips are achieved sub 65nm with the advanced 193nm microlithography process. R&D activities of 45nm process have been started so far, and 193nm lithography is used for this technology. The key parameters for this lithography process are NA of exposure tool, resolution capability of resist, and reflectivity control with bottom anti-reflective coating (BARC). In the point of etching process, single-layer resist process can't be applied because resist thickness is too thin for getting suitable aspect ratio. Therefore, it is necessary to design novel BARC system and develop hard mask materials having high etching selectivity. This system and these materials can be used for 45nm generation lithography. Nissan Chemical Industries, Ltd. and Brewer Science, Inc. have been designed and developed the advanced BARCs for the above propose. In order to satisfy our target, we have developed novel BARC and hard mask materials. We investigated the multi-layer resist process stacked 4 layers (resist / thin BARC / silicon-contained BARC (Si-ARC) / spin on carbon hard mask (SOC)) (4 layers process). 4 layers process showed the excellent lithographic performance and pattern transfer performance. In this paper, we will discuss the detail of our approach and materials for 4 layers process.

Biocompatibility of hydroxyapatite scaffolds processed by lithography-based additive manufacturing.

PubMed

Tesavibul, Passakorn; Chantaweroad, Surapol; Laohaprapanon, Apinya; Channasanon, Somruethai; Uppanan, Paweena; Tanodekaew, Siriporn; Chalermkarnnon, Prasert; Sitthiseripratip, Kriskrai

2015-01-01

The fabrication of hydroxyapatite scaffolds for bone tissue engineering applications by using lithography-based additive manufacturing techniques has been introduced due to the abilities to control porous structures with suitable resolutions. In this research, the use of hydroxyapatite cellular structures, which are processed by lithography-based additive manufacturing machine, as a bone tissue engineering scaffold was investigated. The utilization of digital light processing system for additive manufacturing machine in laboratory scale was performed in order to fabricate the hydroxyapatite scaffold, of which biocompatibilities were eventually evaluated by direct contact and cell-culturing tests. In addition, the density and compressive strength of the scaffolds were also characterized. The results show that the hydroxyapatite scaffold at 77% of porosity with 91% of theoretical density and 0.36 MPa of the compressive strength are able to be processed. In comparison with a conventionally sintered hydroxyapatite, the scaffold did not present any cytotoxic signs while the viability of cells at 95.1% was reported. After 14 days of cell-culturing tests, the scaffold was able to be attached by pre-osteoblasts (MC3T3-E1) leading to cell proliferation and differentiation. The hydroxyapatite scaffold for bone tissue engineering was able to be processed by the lithography-based additive manufacturing machine while the biocompatibilities were also confirmed.

Exploring EUV and SAQP pattering schemes at 5nm technology node

NASA Astrophysics Data System (ADS)

Hamed Fatehy, Ahmed; Kotb, Rehab; Lafferty, Neal; Jiang, Fan; Word, James

2018-03-01

For years, Moore's law keeps driving the semiconductors industry towards smaller dimensions and higher density chips with more devices. Earlier, the correlation between exposure source's wave length and the smallest resolvable dimension, mandated the usage of Deep Ultra-Violent (DUV) optical lithography system which has been used for decades to sustain Moore's law, especially when immersion lithography was introduced with 193nm ArF laser sources. As dimensions of devices get smaller beyond Deep Ultra-Violent (DUV) optical resolution limits, the need for Extremely Ultra-Violent (EUV) optical lithography systems was a must. However, EUV systems were still under development at that time for the mass-production in semiconductors industry. Theretofore, Multi-Patterning (MP) technologies was introduced to swirl about DUV optical lithography limitations in advanced nodes beyond minimum dimension (CD) of 20nm. MP can be classified into two main categories; the first one is to split the target itself across multiple masks that give the original target patterns when they are printed. This category includes Double, Triple and Quadruple patterning (DP, TP, and QP). The second category is the Self-Aligned Patterning (SAP) where the target is divided into Mandrel patterns and non-Mandrel patterns. The Mandrel patterns get printed first, then a self-aligned sidewalls are grown around these printed patterns drawing the other non-Mandrel targets, afterword, a cut mask(s) is used to define target's line-ends. This approach contains Self-Aligned-Double Pattering (SADP) and Self-Aligned- Quadruple-Pattering (SAQP). DUV and MP along together paved the way for the industry down to 7nm. However, with the start of development at the 5nm node and the readiness of EUV, the differentiation question is aroused again, which pattering approach should be selected, direct printing using EUV or DUV with MP, or a hybrid flow that contains both DUV-MP and EUV. In this work we are comparing two potential pattering techniques for Back End Of Line (BEOL) metal layers in the 5nm technology node, the first technique is Single Exposure EUV (SE-EUV) with a Direct Patterning EUV lithography process, and the second one is Self-Aligned Quadruple Patterning (SAQP) with a hybrid lithography processes, where the drawn metal target layer is decomposed into a Mandrel mask and Blocks/Cut mask, Mandrel mask is printed using DUV 193i lithography process, while Block/Cut Mask is printed using SE-EUV lithography process. The pros and cons of each technique are quantified based on Edge-Placement-Error (EPE) and Process Variation Band (PVBand) measured at 1D and 2D edges. The layout used in this comparison is a candidate layout for Foundries 5nm process node.

A novel methodology for litho-to-etch pattern fidelity correction for SADP process

NASA Astrophysics Data System (ADS)

Chen, Shr-Jia; Chang, Yu-Cheng; Lin, Arthur; Chang, Yi-Shiang; Lin, Chia-Chi; Lai, Jun-Cheng

2017-03-01

For 2x nm node semiconductor devices and beyond, more aggressive resolution enhancement techniques (RETs) such as source-mask co-optimization (SMO), litho-etch-litho-etch (LELE) and self-aligned double patterning (SADP) are utilized for the low k1 factor lithography processes. In the SADP process, the pattern fidelity is extremely critical since a slight photoresist (PR) top-loss or profile roughness may impact the later core trim process, due to its sensitivity to environment. During the subsequent sidewall formation and core removal processes, the core trim profile weakness may worsen and induces serious defects that affect the final electrical performance. To predict PR top-loss, a rigorous lithography simulation can provide a reference to modify mask layouts; but it takes a much longer run time and is not capable of full-field mask data preparation. In this paper, we first brought out an algorithm which utilizes multi-intensity levels from conventional aerial image simulation to assess the physical profile through lithography to core trim etching steps. Subsequently, a novel correction method was utilized to improve the post-etch pattern fidelity without the litho. process window suffering. The results not only matched PR top-loss in rigorous lithography simulation, but also agreed with post-etch wafer data. Furthermore, this methodology can also be incorporated with OPC and post-OPC verification to improve core trim profile and final pattern fidelity at an early stage.

Matching OPC and masks on 300-mm lithography tools utilizing variable illumination settings

NASA Astrophysics Data System (ADS)

Palitzsch, Katrin; Kubis, Michael; Schroeder, Uwe P.; Schumacher, Karl; Frangen, Andreas

2004-05-01

CD control is crucial to maximize product yields on 300mm wafers. This is particularly true for DRAM frontend lithography layers, like gate level, and deep trench (capacitor) level. In the DRAM process, large areas of the chip are taken up by array structures, which are difficult to structure due to aggressive pitch requirements. Consequently, the lithography process is centered such that the array structures are printed on target. Optical proximity correction is applied to print gate level structures in the periphery circuitry on target. Only slight differences of the different Zernike terms can cause rather large variations of the proximity curves, resulting in a difference of isolated and semi-isolated lines printed on different tools. If the deviations are too large, tool specific OPC is needed. The same is true for deep trench level, where the length to width ratio of elongated contact-like structures is an important parameter to adjust the electrical properties of the chip. Again, masks with specific biases for tools with different Zernikes are needed to optimize product yield. Additionally, mask making contributes to the CD variation of the process. Theoretically, the CD deviation caused by an off-centered mask process can easily eat up the majority of the CD budget of a lithography process. In practice, masks are very often distributed intelligently among production tools, such that lens and mask effects cancel each other. However, only dose adjusting and mask allocation may still result in a high CD variation with large systematical contributions. By adjusting the illumination settings, we have successfully implemented a method to reduce CD variation on our advanced processes. Especially inner and outer sigma for annular illumination, and the numerical aperture, can be optimized to match mask and stepper properties. This process will be shown to overcome slight lens and mask differences effectively. The effects on lithography process windows have to be considered, nonetheless.

Fabrication of cobalt magnetic nanostructures using atomic force microscope lithography.

PubMed

Chu, Haena; Yun, Seonghun; Lee, Haiwon

2013-12-01

Cobalt nanopatterns are promising assemblies for patterned magnetic storage applications. The fabrication of cobalt magnetic nanostructures on n-tridecylamine x hydrochloride (TDA x HCl) self-assembled monolayer (SAM) modified silicon surfaces using direct writing atomic force microscope (AFM) lithography for localized electrochemical reduction of cobalt ions was demonstrated. The ions were reduced to form metal nanowires along the direction of the electricfield between the AFM tip and the substrate. In this lithography process, TDA x HCI SAMs play an important role in the lithography process for improving the resolution of cobalt nanopatterns by preventing nonspecific reduction of cobalt ions on the unwritten background. Cobalt nanowires and nanodots with width of 225 +/- 26 nm and diameter of 208 +/- 28 nm were successfully fabricated. Platinium-coated polydimethylsiloxane (PDMS) stamp was used fabricating bulk cobalt structures which can be detected by energy dispersive X-ray spectroscopy for element analysis and the physical and magnetic properties of these cobalt nanopatterns were characterized using AFM and magnetic force microscope.

Advanced electric-field scanning probe lithography on molecular resist using active cantilever

NASA Astrophysics Data System (ADS)

Kaestner, Marcus; Aydogan, Cemal; Lipowicz, Hubert-Seweryn; Ivanov, Tzvetan; Lenk, Steve; Ahmad, Ahmad; Angelov, Tihomir; Reum, Alexander; Ishchuk, Valentyn; Atanasov, Ivaylo; Krivoshapkina, Yana; Hofer, Manuel; Holz, Mathias; Rangelow, Ivo W.

2015-03-01

The routine "on demand" fabrication of features smaller than 10 nm opens up new possibilities for the realization of many novel nanoelectronic, NEMS, optical and bio-nanotechnology-based devices. Based on the thermally actuated, piezoresistive cantilever technology we have developed a first prototype of a scanning probe lithography (SPL) platform able to image, inspect, align and pattern features down to single digit nano regime. The direct, mask-less patterning of molecular resists using active scanning probes represents a promising path circumventing the problems in today's radiation-based lithography. Here, we present examples of practical applications of the previously published electric field based, current-controlled scanning probe lithography on molecular glass resist calixarene by using the developed tabletop SPL system. We demonstrate the application of a step-and-repeat scanning probe lithography scheme including optical as well as AFM based alignment and navigation. In addition, sequential read-write cycle patterning combining positive and negative tone lithography is shown. We are presenting patterning over larger areas (80 x 80 μm) and feature the practical applicability of the lithographic processes.

Innovative method to suppress local geometry distortions for fabrication of interdigitated electrode arrays with nano gaps

NASA Astrophysics Data System (ADS)

Partel, S.; Urban, G.

2016-03-01

In this paper we present a method to optimize the lithography process for the fabrication of interdigitated electrode arrays (IDA) for a lift-off free electrochemical biosensor. The biosensor is based on amperometric method to allow a signal amplification by redox cycling. We already demonstrated a method to fabricate IDAs with nano gaps with conventional mask aligner lithography and two subsequent deposition processes. By decreasing the distance down to the nanometer range the linewidth variation is becoming the most critical factor and can result in a short circuit of the electrodes. Therefore, the light propagation and the resist pattern of the mask aligner lithography process are simulated to optimize the lithography process. To optimize the outer finger structure assistant features (AsFe) were introduced. The AsFe allow an optimization of the intensity distribution at the electrode fingers. Hence, the periodicity is expanded and the outer structure of the IDA is practically a part of the periodic array. The better CD uniformity can be obtained by adding three assistant features which generate an equal intensity distributions for the complete finger pattern. Considering a mask optimization of the outer structures would also be feasible. However, due to the strong impact of the gap between mask and wafer at contact lithography it is not practicable. The better choice is to create the same intensity distribution for all finger structures. With the introduction of the assistant features large areas with electrode gap sizes in the sub 100 nm region are demonstrated.

EUV patterning improvement toward high-volume manufacturing

NASA Astrophysics Data System (ADS)

Kuwahara, Yuhei; Matsunaga, Koichi; Kawakami, Shinichiro; Nafus, Kathleen; Foubert, Philippe; Goethals, Anne-Marie

2015-03-01

Extreme ultraviolet lithography (EUVL) technology is a promising candidate for a semiconductor process for 18nm half pitch and beyond. So far, the studies of EUV for manufacturability have been focused on particular aspects. It still requires fine resolution, uniform and smooth patterns, and low defectivity, not only after lithography but also after the etch process. Tokyo Electron Limited and imec are continuously collaborating to improve manufacturing quality of the process of record (POR) on a CLEAN TRACKTM LITHIUS ProTMZ-EUV. This next generation coating/developing system has been upgraded with defectivity reduction enhancements which are applied along with TELTM best known methods. We have evaluated process defectivity post lithography and post etch. Apart from defectivity, FIRMTM rinse material and application compatibility with sub 18nm patterning is improved to prevent line pattern collapse and increase process window on next generation resist materials. This paper reports on the progress of defectivity and patterning performance optimization towards the NXE:3300 POR.

Plastic masters-rigid templates for soft lithography.

PubMed

Desai, Salil P; Freeman, Dennis M; Voldman, Joel

2009-06-07

We demonstrate a simple process for the fabrication of rigid plastic master molds for soft lithography directly from (poly)dimethysiloxane devices. Plastics masters (PMs) provide a cost-effective alternative to silicon-based masters and can be easily replicated without the need for cleanroom facilities. We have successfully demonstrated the use of plastics micromolding to generate both single and dual-layer plastic structures, and have characterized the fidelity of the molding process. Using the PM fabrication technique, world-to-chip connections can be integrated directly into the master enabling devices with robust, well-aligned fluidic ports directly after molding. PMs provide an easy technique for the fabrication of microfluidic devices and a simple route for the scaling-up of fabrication of robust masters for soft lithography.

Robust resolution enhancement optimization methods to process variations based on vector imaging model

NASA Astrophysics Data System (ADS)

Ma, Xu; Li, Yanqiu; Guo, Xuejia; Dong, Lisong

2012-03-01

Optical proximity correction (OPC) and phase shifting mask (PSM) are the most widely used resolution enhancement techniques (RET) in the semiconductor industry. Recently, a set of OPC and PSM optimization algorithms have been developed to solve for the inverse lithography problem, which are only designed for the nominal imaging parameters without giving sufficient attention to the process variations due to the aberrations, defocus and dose variation. However, the effects of process variations existing in the practical optical lithography systems become more pronounced as the critical dimension (CD) continuously shrinks. On the other hand, the lithography systems with larger NA (NA>0.6) are now extensively used, rendering the scalar imaging models inadequate to describe the vector nature of the electromagnetic field in the current optical lithography systems. In order to tackle the above problems, this paper focuses on developing robust gradient-based OPC and PSM optimization algorithms to the process variations under a vector imaging model. To achieve this goal, an integrative and analytic vector imaging model is applied to formulate the optimization problem, where the effects of process variations are explicitly incorporated in the optimization framework. The steepest descent algorithm is used to optimize the mask iteratively. In order to improve the efficiency of the proposed algorithms, a set of algorithm acceleration techniques (AAT) are exploited during the optimization procedure.

Compensation for Lithography Induced Process Variations during Physical Design

NASA Astrophysics Data System (ADS)

Chin, Eric Yiow-Bing

This dissertation addresses the challenge of designing robust integrated circuits in the deep sub micron regime in the presence of lithography process variability. By extending and combining existing process and circuit analysis techniques, flexible software frameworks are developed to provide detailed studies of circuit performance in the presence of lithography variations such as focus and exposure. Applications of these software frameworks to select circuits demonstrate the electrical impact of these variations and provide insight into variability aware compact models that capture the process dependent circuit behavior. These variability aware timing models abstract lithography variability from the process level to the circuit level and are used to estimate path level circuit performance with high accuracy with very little overhead in runtime. The Interconnect Variability Characterization (IVC) framework maps lithography induced geometrical variations at the interconnect level to electrical delay variations. This framework is applied to one dimensional repeater circuits patterned with both 90nm single patterning and 32nm double patterning technologies, under the presence of focus, exposure, and overlay variability. Studies indicate that single and double patterning layouts generally exhibit small variations in delay (between 1--3%) due to self compensating RC effects associated with dense layouts and overlay errors for layouts without self-compensating RC effects. The delay response of each double patterned interconnect structure is fit with a second order polynomial model with focus, exposure, and misalignment parameters with 12 coefficients and residuals of less than 0.1ps. The IVC framework is also applied to a repeater circuit with cascaded interconnect structures to emulate more complex layout scenarios, and it is observed that the variations on each segment average out to reduce the overall delay variation. The Standard Cell Variability Characterization (SCVC) framework advances existing layout-level lithography aware circuit analysis by extending it to cell-level applications utilizing a physically accurate approach that integrates process simulation, compact transistor models, and circuit simulation to characterize electrical cell behavior. This framework is applied to combinational and sequential cells in the Nangate 45nm Open Cell Library, and the timing response of these cells to lithography focus and exposure variations demonstrate Bossung like behavior. This behavior permits the process parameter dependent response to be captured in a nine term variability aware compact model based on Bossung fitting equations. For a two input NAND gate, the variability aware compact model captures the simulated response to an accuracy of 0.3%. The SCVC framework is also applied to investigate advanced process effects including misalignment and layout proximity. The abstraction of process variability from the layout level to the cell level opens up an entire new realm of circuit analysis and optimization and provides a foundation for path level variability analysis without the computationally expensive costs associated with joint process and circuit simulation. The SCVC framework is used with slight modification to illustrate the speedup and accuracy tradeoffs of using compact models. With variability aware compact models, the process dependent performance of a three stage logic circuit can be estimated to an accuracy of 0.7% with a speedup of over 50,000. Path level variability analysis also provides an accurate estimate (within 1%) of ring oscillator period in well under a second. Another significant advantage of variability aware compact models is that they can be easily incorporated into existing design methodologies for design optimization. This is demonstrated by applying cell swapping on a logic circuit to reduce the overall delay variability along a circuit path. By including these variability aware compact models in cell characterization libraries, design metrics such as circuit timing, power, area, and delay variability can be quickly assessed to optimize for the correct balance of all design metrics, including delay variability. Deterministic lithography variations can be easily captured using the variability aware compact models described in this dissertation. However, another prominent source of variability is random dopant fluctuations, which affect transistor threshold voltage and in turn circuit performance. The SCVC framework is utilized to investigate the interactions between deterministic lithography variations and random dopant fluctuations. Monte Carlo studies show that the output delay distribution in the presence of random dopant fluctuations is dependent on lithography focus and exposure conditions, with a 3.6 ps change in standard deviation across the focus exposure process window. This indicates that the electrical impact of random variations is dependent on systematic lithography variations, and this dependency should be included for precise analysis.

Advanced scanning probe lithography.

PubMed

Garcia, Ricardo; Knoll, Armin W; Riedo, Elisa

2014-08-01

The nanoscale control afforded by scanning probe microscopes has prompted the development of a wide variety of scanning-probe-based patterning methods. Some of these methods have demonstrated a high degree of robustness and patterning capabilities that are unmatched by other lithographic techniques. However, the limited throughput of scanning probe lithography has prevented its exploitation in technological applications. Here, we review the fundamentals of scanning probe lithography and its use in materials science and nanotechnology. We focus on robust methods, such as those based on thermal effects, chemical reactions and voltage-induced processes, that demonstrate a potential for applications.

Co-optimization of lithographic and patterning processes for improved EPE performance

NASA Astrophysics Data System (ADS)

Maslow, Mark J.; Timoshkov, Vadim; Kiers, Ton; Jee, Tae Kwon; de Loijer, Peter; Morikita, Shinya; Demand, Marc; Metz, Andrew W.; Okada, Soichiro; Kumar, Kaushik A.; Biesemans, Serge; Yaegashi, Hidetami; Di Lorenzo, Paolo; Bekaert, Joost P.; Mao, Ming; Beral, Christophe; Larivière, Stephane

2017-03-01

Complimentary lithography is already being used for advanced logic patterns. The tight pitches for 1D Metal layers are expected to be created using spacer based multiple patterning ArF-i exposures and the more complex cut/block patterns are made using EUV exposures. At the same time, control requirements of CDU, pattern shift and pitch-walk are approaching sub-nanometer levels to meet edge placement error (EPE) requirements. Local variability, such as Line Edge Roughness (LER), Local CDU, and Local Placement Error (LPE), are dominant factors in the total Edge Placement error budget. In the lithography process, improving the imaging contrast when printing the core pattern has been shown to improve the local variability. In the etch process, it has been shown that the fusion of atomic level etching and deposition can also improve these local variations. Co-optimization of lithography and etch processing is expected to further improve the performance over individual optimizations alone. To meet the scaling requirements and keep process complexity to a minimum, EUV is increasingly seen as the platform for delivering the exposures for both the grating and the cut/block patterns beyond N7. In this work, we evaluated the overlay and pattern fidelity of an EUV block printed in a negative tone resist on an ArF-i SAQP grating. High-order Overlay modeling and corrections during the exposure can reduce overlay error after development, a significant component of the total EPE. During etch, additional degrees of freedom are available to improve the pattern placement error in single layer processes. Process control of advanced pitch nanoscale-multi-patterning techniques as described above is exceedingly complicated in a high volume manufacturing environment. Incorporating potential patterning optimizations into both design and HVM controls for the lithography process is expected to bring a combined benefit over individual optimizations. In this work we will show the EPE performance improvement for a 32nm pitch SAQP + block patterned Metal 2 layer by cooptimizing the lithography and etch processes. Recommendations for further improvements and alternative processes will be given.

Mask manufacturing of advanced technology designs using multi-beam lithography (Part 1)

NASA Astrophysics Data System (ADS)

Green, Michael; Ham, Young; Dillon, Brian; Kasprowicz, Bryan; Hur, Ik Boum; Park, Joong Hee; Choi, Yohan; McMurran, Jeff; Kamberian, Henry; Chalom, Daniel; Klikovits, Jan; Jurkovic, Michal; Hudek, Peter

2016-10-01

As optical lithography is extended into 10nm and below nodes, advanced designs are becoming a key challenge for mask manufacturers. Techniques including advanced Optical Proximity Correction (OPC) and Inverse Lithography Technology (ILT) result in structures that pose a range of issues across the mask manufacturing process. Among the new challenges are continued shrinking Sub-Resolution Assist Features (SRAFs), curvilinear SRAFs, and other complex mask geometries that are counter-intuitive relative to the desired wafer pattern. Considerable capability improvements over current mask making methods are necessary to meet the new requirements particularly regarding minimum feature resolution and pattern fidelity. Advanced processes using the IMS Multi-beam Mask Writer (MBMW) are feasible solutions to these coming challenges. In this paper, we study one such process, characterizing mask manufacturing capability of 10nm and below structures with particular focus on minimum resolution and pattern fidelity.

Mask manufacturing of advanced technology designs using multi-beam lithography (part 2)

NASA Astrophysics Data System (ADS)

Green, Michael; Ham, Young; Dillon, Brian; Kasprowicz, Bryan; Hur, Ik Boum; Park, Joong Hee; Choi, Yohan; McMurran, Jeff; Kamberian, Henry; Chalom, Daniel; Klikovits, Jan; Jurkovic, Michal; Hudek, Peter

2016-09-01

As optical lithography is extended into 10nm and below nodes, advanced designs are becoming a key challenge for mask manufacturers. Techniques including advanced optical proximity correction (OPC) and Inverse Lithography Technology (ILT) result in structures that pose a range of issues across the mask manufacturing process. Among the new challenges are continued shrinking sub-resolution assist features (SRAFs), curvilinear SRAFs, and other complex mask geometries that are counter-intuitive relative to the desired wafer pattern. Considerable capability improvements over current mask making methods are necessary to meet the new requirements particularly regarding minimum feature resolution and pattern fidelity. Advanced processes using the IMS Multi-beam Mask Writer (MBMW) are feasible solutions to these coming challenges. In this paper, Part 2 of our study, we further characterize an MBMW process for 10nm and below logic node mask manufacturing including advanced pattern analysis and write time demonstration.

Ultralow dose effects in ion-beam induced grafting of polymethylmethacrylate (PMMA)

NASA Astrophysics Data System (ADS)

Corelli, J. C.; Steckl, A. J.; Pulver, D.; Randall, J. N.

We have investigated the process of image enhancement in high resolution lithography through polymer grafting techniques. Sensitivity gains of 10 3-10 4 were obtained for H +, X-ray, e-beam and deep-UV irradiations. Ultralow dose effects in 60 keV H + irradiated PMMA have been observed through the use of the acrylic acid (AA) monomer grafting with irradiated PMMA. At conventional doses of 10 10 cm -2 an inner structure of each feature is revealed. At doses of (1-2) X 10 9 cm -2, discrete events within the exposed regions are observable. This is the first time that individual events have been observable in a lithography process and sets the upper limit in the useful sensitivity of the resist and ion lithography process. This effect is directly observable only with ions, because of their higher efficiency per particle than either photons or electrons.

Controlling bridging and pinching with pixel-based mask for inverse lithography

NASA Astrophysics Data System (ADS)

Kobelkov, Sergey; Tritchkov, Alexander; Han, JiWan

2016-03-01

Inverse Lithography Technology (ILT) has become a viable computational lithography candidate in recent years as it can produce mask output that results in process latitude and CD control in the fab that is hard to match with conventional OPC/SRAF insertion approaches. An approach to solving the inverse lithography problem as a nonlinear, constrained minimization problem over a domain mask pixels was suggested in the paper by Y. Granik "Fast pixel-based mask optimization for inverse lithography" in 2006. The present paper extends this method to satisfy bridging and pinching constraints imposed on print contours. Namely, there are suggested objective functions expressing penalty for constraints violations, and their minimization with gradient descent methods is considered. This approach has been tested with an ILT-based Local Printability Enhancement (LPTM) tool in an automated flow to eliminate hotspots that can be present on the full chip after conventional SRAF placement/OPC and has been applied in 14nm, 10nm node production, single and multiple-patterning flows.

Line-frequency doubling of directed self-assembly patterns for single-digit bit pattern media lithography

NASA Astrophysics Data System (ADS)

Patel, K. C.; Ruiz, R.; Lille, J.; Wan, L.; Dobiz, E.; Gao, H.; Robertson, N.; Albrecht, T. R.

2012-03-01

Directed self-assembly is emerging as a promising technology to define sub-20nm features. However, a straightforward path to scale block copolymer lithography to single-digit fabrication remains challenging given the diverse material properties found in the wide spectrum of self-assembling materials. A vast amount of block copolymer research for industrial applications has been dedicated to polystyrene-b-methyl methacrylate (PS-b-PMMA), a model system that displays multiple properties making it ideal for lithography, but that is limited by a weak interaction parameter that prevents it from scaling to single-digit lithography. Other block copolymer materials have shown scalability to much smaller dimensions, but at the expense of other material properties that could delay their insertion into industrial lithographic processes. We report on a line doubling process applied to block copolymer patterns to double the frequency of PS-b-PMMA line/space features, demonstrating the potential of this technique to reach single-digit lithography. We demonstrate a line-doubling process that starts with directed self-assembly of PS-b-PMMA to define line/space features. This pattern is transferred into an underlying sacrificial hard-mask layer followed by a growth of self-aligned spacers which subsequently serve as hard-masks for transferring the 2x frequency doubled pattern to the underlying substrate. We applied this process to two different block copolymer materials to demonstrate line-space patterns with a half pitch of 11nm and 7nm underscoring the potential to reach single-digit critical dimensions. A subsequent patterning step with perpendicular lines can be used to cut the fine line patterns into a 2-D array of islands suitable for bit patterned media. Several integration challenges such as line width control and line roughness are addressed.

New 3D structuring process for non-integrated circuit related technologies (Conference Presentation)

NASA Astrophysics Data System (ADS)

Nouri, Lamia; Possémé, Nicolas; Landis, Stéfan; Milesi, Frédéric; Gaillard, Frédéric-Xavier

2017-04-01

Fabrication processes that microelectronic developed for Integrated circuit (IC) technologies for decades, do not meet the new emerging structuration's requirements, in particular non-IC related technologies one, such as MEMS/NEMS, Micro-Fluidics, photovoltaics, lenses. Actually complex 3D structuration requires complex lithography patterning approaches such as gray-scale electron beam lithography, laser ablation, focused ion beam lithography, two photon polymerization. It is now challenging to find cheaper and easiest technique to achieve 3D structures. In this work, we propose a straightforward process to realize 3D structuration, intended for silicon based materials (Si, SiN, SiOCH). This structuration technique is based on nano-imprint lithography (NIL), ion implantation and selective wet etching. In a first step a pattern is performed by lithography on a substrate, then ion implantation is realized through a resist mask in order to create localized modifications in the material, thus the pattern is transferred into the subjacent layer. Finally, after the resist stripping, a selective wet etching is carried out to remove selectively the modified material regarding the non-modified one. In this paper, we will first present results achieved with simple 2D line array pattern processed either on Silicon or SiOCH samples. This step have been carried out to demonstrate the feasibility of this new structuration process. SEM pictures reveals that "infinite" selectivity between the implanted areas versus the non-implanted one could be achieved. We will show that a key combination between the type of implanted ion species and wet etching chemistries is required to obtain such results. The mechanisms understanding involved during both implantation and wet etching processes will also be presented through fine characterizations with Photoluminescence, Raman and Secondary Ion Mass Spectrometry (SIMS) for silicon samples, and ellipso-porosimetry and Fourier Transform InfraRed spectroscopy (FTIR) for SiOCH samples. Finally the benefit of this new patterning approach will be presented on 3D patterns structures.

A method to restrain the charging effect on an insulating substrate in high energy electron beam lithography

NASA Astrophysics Data System (ADS)

Mingyan, Yu; Shirui, Zhao; Yupeng, Jing; Yunbo, Shi; Baoqin, Chen

2014-12-01

Pattern distortions caused by the charging effect should be reduced while using the electron beam lithography process on an insulating substrate. We have developed a novel process by using the SX AR-PC 5000/90.1 solution as a spin-coated conductive layer, to help to fabricate nanoscale patterns of poly-methyl-methacrylate polymer resist on glass for phased array device application. This method can restrain the influence of the charging effect on the insulating substrate effectively. Experimental results show that the novel process can solve the problems of the distortion of resist patterns and electron beam main field stitching error, thus ensuring the accuracy of the stitching and overlay of the electron beam lithography system. The main characteristic of the novel process is that it is compatible to the multi-layer semiconductor process inside a clean room, and is a green process, quite simple, fast, and low cost. It can also provide a broad scope in the device development on insulating the substrate, such as high density biochips, flexible electronics and liquid crystal display screens.

Mask cost of ownership for advanced lithography

NASA Astrophysics Data System (ADS)

Muzio, Edward G.; Seidel, Philip K.

2000-07-01

As technology advances, becoming more difficult and more expensive, the cost of ownership (CoO) metric becomes increasingly important in evaluating technical strategies. The International SEMATECH CoC analysis has steadily gained visibility over the past year, as it attempts to level the playing field between technology choices, and create a fair relative comparison. In order to predict mask cots for advanced lithography, mask process flows are modeled using bets-known processing strategies, equipment cost, and yields. Using a newly revised yield mode, and updated mask manufacture flows, representative mask flows can be built. These flows are then used to calculate mask costs for advanced lithography down to the 50 nm node. It is never the goal of this type of work to provide absolute cost estimates for business planning purposes. However, the combination of a quantifiable yield model with a clearly defined set of mask processing flows and a cost model based upon them serves as an excellent starting point for cost driver analysis and process flow discussion.

Fabrication of high quality aspheric microlens array by dose-modulated lithography and surface thermal reflow

NASA Astrophysics Data System (ADS)

Huang, Shengzhou; Li, Mujun; Shen, Lianguan; Qiu, Jinfeng; Zhou, Youquan

2018-03-01

A novel fabrication method for high quality aspheric microlens array (MLA) was developed by combining the dose-modulated DMD-based lithography and surface thermal reflow process. In this method, the complex shape of aspheric microlens is pre-modeled via dose modulation in a digital micromirror device (DMD) based maskless projection lithography. And the dose modulation mainly depends on the distribution of exposure dose of photoresist. Then the pre-shaped aspheric microlens is polished by a following non-contact thermal reflow (NCTR) process. Different from the normal process, the reflow process here is investigated to improve the surface quality while keeping the pre-modeled shape unchanged, and thus will avoid the difficulties in generating the aspheric surface during reflow. Fabrication of a designed aspheric MLA with this method was demonstrated in experiments. Results showed that the obtained aspheric MLA was good in both shape accuracy and surface quality. The presented method may be a promising approach in rapidly fabricating high quality aspheric microlens with complex surface.

Investigation of pattern transfer to piezoelectric jetted polymer using roll-to-roll nanoimprint lithography

NASA Astrophysics Data System (ADS)

Menezes, Shannon John

Nanoimprint Lithography (NIL) has existed since the mid 1990s as a proven concept of creating micro- and nanostructures using direct mechanical pattern transfer. Initially seen as a viable option to replace conventional lithography methods, the lack of technology to support large-scale manufacturing using NIL has motivated researchers to explore the application of NIL to create a better, more cost-efficient process with the ability to integrate NIL into a mass manufacturing system. One such method is the roll-to-roll process, similar to that used in printing presses of newspapers and plastics. This thesis is an investigation to characterize polymer deposition using a piezoelectric jetting head and attempt to create micro- and nanostructures on the polymer using R2RNIL technique.

Resist Parameter Extraction from Line-and-Space Patterns of Chemically Amplified Resist for Extreme Ultraviolet Lithography

NASA Astrophysics Data System (ADS)

Kozawa, Takahiro; Oizumi, Hiroaki; Itani, Toshiro; Tagawa, Seiichi

2010-11-01

The development of extreme ultraviolet (EUV) lithography has progressed owing to worldwide effort. As the development status of EUV lithography approaches the requirements for the high-volume production of semiconductor devices with a minimum line width of 22 nm, the extraction of resist parameters becomes increasingly important from the viewpoints of the accurate evaluation of resist materials for resist screening and the accurate process simulation for process and mask designs. In this study, we demonstrated that resist parameters (namely, quencher concentration, acid diffusion constant, proportionality constant of line edge roughness, and dissolution point) can be extracted from the scanning electron microscopy (SEM) images of patterned resists without the knowledge on the details of resist contents using two types of latest EUV resist.

Understanding overlay signatures using machine learning on non-lithography context information

NASA Astrophysics Data System (ADS)

Overcast, Marshall; Mellegaard, Corey; Daniel, David; Habets, Boris; Erley, Georg; Guhlemann, Steffen; Thrun, Xaver; Buhl, Stefan; Tottewitz, Steven

2018-03-01

Overlay errors between two layers can be caused by non-lithography processes. While these errors can be compensated by the run-to-run system, such process and tool signatures are not always stable. In order to monitor the impact of non-lithography context on overlay at regular intervals, a systematic approach is needed. Using various machine learning techniques, significant context parameters that relate to deviating overlay signatures are automatically identified. Once the most influential context parameters are found, a run-to-run simulation is performed to see how much improvement can be obtained. The resulting analysis shows good potential for reducing the influence of hidden context parameters on overlay performance. Non-lithographic contexts are significant contributors, and their automatic detection and classification will enable the overlay roadmap, given the corresponding control capabilities.

ESH assessment of advanced lithography materials and processes

NASA Astrophysics Data System (ADS)

Worth, Walter F.; Mallela, Ram

2004-05-01

The ESH Technology group at International SEMATECH is conducting environment, safety, and health (ESH) assessments in collaboration with the lithography technologists evaluating the performance of an increasing number of new materials and technologies being considered for advanced lithography such as 157nm photresist and extreme ultraviolet (EUV). By performing data searches for 75 critical data types, emissions characterizations, and industrial hygiene (IH) monitoring during the use of the resist candidates, it has been shown that the best performing resist formulations, so far, appear to be free of potential ESH concerns. The ESH assessment of the EUV lithography tool that is being developed for SEMATECH has identified several features of the tool that are of ESH concern: high energy consumption, poor energy conversion efficiency, tool complexity, potential ergonomic and safety interlock issues, use of high powered laser(s), generation of ionizing radiation (soft X-rays), need for adequate shielding, and characterization of the debris formed by the extreme temperature of the plasma. By bringing these ESH challenges to the attention of the technologists and tool designers, it is hoped that the processes and tools can be made more ESH friendly.

Patterning control strategies for minimum edge placement error in logic devices

NASA Astrophysics Data System (ADS)

Mulkens, Jan; Hanna, Michael; Slachter, Bram; Tel, Wim; Kubis, Michael; Maslow, Mark; Spence, Chris; Timoshkov, Vadim

2017-03-01

In this paper we discuss the edge placement error (EPE) for multi-patterning semiconductor manufacturing. In a multi-patterning scheme the creation of the final pattern is the result of a sequence of lithography and etching steps, and consequently the contour of the final pattern contains error sources of the different process steps. We describe the fidelity of the final pattern in terms of EPE, which is defined as the relative displacement of the edges of two features from their intended target position. We discuss our holistic patterning optimization approach to understand and minimize the EPE of the final pattern. As an experimental test vehicle we use the 7-nm logic device patterning process flow as developed by IMEC. This patterning process is based on Self-Aligned-Quadruple-Patterning (SAQP) using ArF lithography, combined with line cut exposures using EUV lithography. The computational metrology method to determine EPE is explained. It will be shown that ArF to EUV overlay, CDU from the individual process steps, and local CD and placement of the individual pattern features, are the important contributors. Based on the error budget, we developed an optimization strategy for each individual step and for the final pattern. Solutions include overlay and CD metrology based on angle resolved scatterometry, scanner actuator control to enable high order overlay corrections and computational lithography optimization to minimize imaging induced pattern placement errors of devices and metrology targets.

Sub-100-nm trackwidth development by e-beam lithography for advanced magnetic recording heads

NASA Astrophysics Data System (ADS)

Chang, Jei-Wei; Chen, Chao-Peng

2006-03-01

Although semiconductor industry ramps the products with 90 nm much quicker than anticipated [1], magnetic recording head manufacturers still have difficulties in producing sub-100 nm read/write trackwidth. Patterning for high-aspectratio writer requires much higher depth of focus (DOF) than most advanced optical lithography, including immersion technique developed recently [2]. Self-aligning reader with its stabilized bias requires a bi-layer lift-off structure where the underlayer is narrower than the top image layer. As the reader's trackwidth is below 100nm, the underlayer becomes very difficult to control. Among available approaches, e-beam lithography remains the most promising one to overcome the challenge of progressive miniaturization. In this communication, the authors discussed several approaches using ebeam lithography to achieve sub-100 nm read/write trackwidth. Our studies indicated the suspended resist bridge design can not only widen the process window for lift-off process but also makes 65 nm trackwidth feasible to manufacture. Necked dog-bone structure seems to be the best design in this application due to less proximity effects from adjacent structures and minimum blockages for ion beam etching. The trackwidth smaller than 65 nm can be fabricated via the combination of e-beam lithography with auxiliary slimming and/or trimming. However, deposit overspray through undercut becomes dominated in such a small dimension. To minimize the overspray, the effects of underlayer thickness need to be further studied.

The application of phase grating to CLM technology for the sub-65nm node optical lithography

NASA Astrophysics Data System (ADS)

Yoon, Gi-Sung; Kim, Sung-Hyuck; Park, Ji-Soong; Choi, Sun-Young; Jeon, Chan-Uk; Shin, In-Kyun; Choi, Sung-Woon; Han, Woo-Sung

2005-06-01

As a promising technology for sub-65nm node optical lithography, CLM(Chrome-Less Mask) technology among RETs(Resolution Enhancement Techniques) for low k1 has been researched worldwide in recent years. CLM has several advantages, such as relatively simple manufacturing process and competitive performance compared to phase-edge PSM's. For the low-k1 lithography, we have researched CLM technique as a good solution especially for sub-65nm node. As a step for developing the sub-65nm node optical lithography, we have applied CLM technology in 80nm-node lithography with mesa and trench method. From the analysis of the CLM technology in the 80nm lithography, we found that there is the optimal shutter size for best performance in the technique, the increment of wafer ADI CD varied with pattern's pitch, and a limitation in patterning various shapes and size by OPC dead-zone - OPC dead-zone in CLM technique is the specific region of shutter size that dose not make the wafer CD increased more than a specific size. And also small patterns are easily broken, while fabricating the CLM mask in mesa method. Generally, trench method has better optical performance than mesa. These issues have so far restricted the application of CLM technology to a small field. We approached these issues with 3-D topographic simulation tool and found that the issues could be overcome by applying phase grating in trench-type CLM. With the simulation data, we made some test masks which had many kinds of patterns with many different conditions and analyzed their performance through AIMS fab 193 and exposure on wafer. Finally, we have developed the CLM technology which is free of OPC dead-zone and pattern broken in fabrication process. Therefore, we can apply the CLM technique into sub-65nm node optical lithography including logic devices.

Force-controlled inorganic crystallization lithography.

PubMed

Cheng, Chao-Min; LeDuc, Philip R

2006-09-20

Lithography plays a key role in integrated circuits, optics, information technology, biomedical applications, catalysis, and separation technologies. However, inorganic lithography techniques remain of limited utility for applications outside of the typical foci of integrated circuit manufacturing. In this communication, we have developed a novel stamping method that applies pressure on the upper surface of the stamp to regulate the dewetting process of the inorganic buffer and the evaporation rate of the solvent in this buffer between the substrate and the surface of the stamp. We focused on generating inorganic microstructures with specific locations and also on enabling the ability to pattern gradients during the crystallization of the inorganic salts. This approach utilized a combination of lithography with bottom-up growth and assembly of inorganic crystals. This work has potential applications in a variety of fields, including studying inorganic material patterning and small-scale fabrication technology.

Selective Etching via Soft Lithography of Conductive Multilayered Gold Films with Analysis of Electrolyte Solutions

ERIC Educational Resources Information Center

Gerber, Ralph W.; Oliver-Hoyo, Maria T.

2008-01-01

This experiment is designed to expose undergraduate students to the process of selective etching by using soft lithography and the resulting electrical properties of multilayered films fabricated via self-assembly of gold nanoparticles. Students fabricate a conductive film of gold on glass, apply a patterned resist using a polydimethylsiloxane…

Simulation study of reticle enhancement technology applications for 157-nm lithography

NASA Astrophysics Data System (ADS)

Schurz, Dan L.; Flack, Warren W.; Karklin, Linard

2002-03-01

The acceleration of the International Technology Roadmap for Semiconductors (ITRS) is placing significant pressure on the industry's infrastructure, particularly the lithography equipment. As recently as 1997, there was no optical solution offered past the 130 nm design node. The current roadmap has the 65 nm node (reduced from 70 nm) pulled in one year to 2007. Both 248 nm and 193 nm wavelength lithography tools will be pushed to their practical resolution limits in the near term. Very high numerical aperture (NA) 193 nm exposure tools in conjunction with resolution enhancement techniques (RET) will postpone the requirement for 157 nm lithography in manufacturing. However, ICs produced at 70 nm design rules with manufacturable k 1 values will require that 157 nm wavelength lithography tools incorporate the same RETs utilized in 248nm, and 193 nm tools. These enhancements will include Alternating Phase Shifting Masks (AltPSM) and Optical Proximity Correction (OPC) on F 2 doped quartz reticle substrates. This study investigates simulation results when AltPSM is applied to sub-100 nm test patterns in 157 nm lithography in order to maintain Critical Dimension (CD) control for both nested and isolated geometries. Aerial image simulations are performed for a range of numerical apertures, chrome regulators, gate pitches and gate widths. The relative performance for phase shifted versus binary structures is also compared. Results are demonstrated in terms of aerial image contrast and process window changes. The results clearly show that a combination of high NA and RET is necessary to achieve usable process windows for 70 nm line/space structures. In addition, it is important to consider two-dimensional proximity effects for sub-100 nm gate structures.

Rapid prototyping of microstructures in polydimethylsiloxane (PDMS) by direct UV-lithography.

PubMed

Scharnweber, Tim; Truckenmüller, Roman; Schneider, Andrea M; Welle, Alexander; Reinhardt, Martina; Giselbrecht, Stefan

2011-04-07

Microstructuring of polydimethylsiloxane (PDMS) is a key step for many lab-on-a-chip (LOC) applications. In general, the structure is generated by casting the liquid prepolymer against a master. The production of the master in turn calls for special equipment and know how. Furthermore, a given master only allows the reproduction of the defined structure. We report on a simple, cheap and practical method to produce microstructures in already cured PDMS by direct UV-lithography followed by chemical development. Due to the available options during the lithographic process like multiple exposures, the method offers a high design flexibility granting easy access to complex and stepped structures. Furthermore, no master is needed and the use of pre-cured PDMS allows processing at ambient (light) conditions. Features down to approximately 5 µm and a depth of 10 µm can be realised. As a proof of principle, we demonstrate the feasibility of the process by applying the structures to various established soft lithography techniques.

ILT optimization of EUV masks for sub-7nm lithography

NASA Astrophysics Data System (ADS)

Hooker, Kevin; Kuechler, Bernd; Kazarian, Aram; Xiao, Guangming; Lucas, Kevin

2017-06-01

The 5nm and 7nm technology nodes will continue recent scaling trends and will deliver significantly smaller minimum features, standard cell areas and SRAM cell areas vs. the 10nm node. There are tremendous economic pressures to shrink each subsequent technology, though in a cost-effective and performance enhancing manner. IC manufacturers are eagerly awaiting EUV so that they can more aggressively shrink their technology than they could by using complicated MPT. The current 0.33NA EUV tools and processes also have their patterning limitations. EUV scanner lenses, scanner sources, masks and resists are all relatively immature compared to the current lithography manufacturing baseline of 193i. For example, lens aberrations are currently several times larger (as a function of wavelength) in EUV scanners than for 193i scanners. Robustly patterning 16nm L/S fully random logic metal patterns and 40nm pitch random logic rectangular contacts with 0.33NA EUV are tough challenges that will benefit from advanced OPC/RET. For example, if an IC manufacturer can push single exposure device layer resolution 10% tighter using improved ILT to avoid using DPT, there will be a significant cost and process complexity benefit to doing so. ILT is well known to have considerable benefits in finding flexible 193i mask pattern solutions to improve process window, improve 2D CD control, improve resolution in low K1 lithography regime and help to delay the introduction of DPT. However, ILT has not previously been applied to EUV lithography. In this paper, we report on new developments which extend ILT method to EUV lithography and we characterize the benefits seen vs. traditional EUV OPC/RET methods.

Quadratic nonlinear optics to assess the morphology of riboflavin doped chitosan for eco-friendly lithography

NASA Astrophysics Data System (ADS)

Ray, Cédric; Caillau, Mathieu; Jonin, Christian; Benichou, Emmanuel; Moulin, Christophe; Salmon, Estelle; Maldonado, Melissa E.; Gomes, Anderson S. L.; Monnier, Virginie; Laurenceau, Emmanuelle; Leclercq, Jean-Louis; Chevolot, Yann; Delair, Thierry; Brevet, Pierre-François

2018-06-01

We report the use of the Second Harmonic Generation response from a riboflavin doped chitosan film as a characterization method of the film morphology. This film is of particular interest in the development of new and bio-sourced material for eco-friendly UV lithography. The method allows us to determine how riboflavin is distributed as a function of film depth in the sample. This possibility is of importance in order to have a better understanding of the riboflavin influence in chitosan films during the lithography process. On the contrary, linear optical techniques provide no information beyond the mere confirmation of the riboflavin presence.

Fabrication of submicron structures in nanoparticle/polymer composite by holographic lithography and reactive ion etching

NASA Astrophysics Data System (ADS)

Zhang, A. Ping; He, Sailing; Kim, Kyoung Tae; Yoon, Yong-Kyu; Burzynski, Ryszard; Samoc, Marek; Prasad, Paras N.

2008-11-01

We report on the fabrication of nanoparticle/polymer submicron structures by combining holographic lithography and reactive ion etching. Silica nanoparticles are uniformly dispersed in a (SU8) polymer matrix at a high concentration, and in situ polymerization (cross-linking) is used to form a nanoparticle/polymer composite. Another photosensitive SU8 layer cast upon the nanoparticle/SU8 composite layer is structured through holographic lithography, whose pattern is finally transferred to the nanoparticle/SU8 layer by the reactive ion etching process. Honeycomb structures in a submicron scale are experimentally realized in the nanoparticle/SU8 composite.

Examination for optimization of synchrotron radiation spectrum for the x ray depth lithography

NASA Astrophysics Data System (ADS)

Dany, Raimund

1992-06-01

The effect of reducing the vertical distribution of synchrotron radiation on its spectral distribution is examined through resin irradiation. The resulting filter effect is compared to that of absorption filters. Transmission coefficients of titanium, gold, and polyamide were calculated from linear absorption coefficients with the Beer law. The use of a diaphragm in X-ray depth lithography, which is the first step of the LIGA (Lithography Galvanoforming Molding) process, is discussed. A calorimetric device for determining the synchrotron radiation power and distribution was developed and tested. Measurements at the ELSA storage ring show a strong dependence of the vertical emittance on the electron current.

High throughput optical lithography by scanning a massive array of bowtie aperture antennas at near-field

PubMed Central

Wen, X.; Datta, A.; Traverso, L. M.; Pan, L.; Xu, X.; Moon, E. E.

2015-01-01

Optical lithography, the enabling process for defining features, has been widely used in semiconductor industry and many other nanotechnology applications. Advances of nanotechnology require developments of high-throughput optical lithography capabilities to overcome the optical diffraction limit and meet the ever-decreasing device dimensions. We report our recent experimental advancements to scale up diffraction unlimited optical lithography in a massive scale using the near field nanolithography capabilities of bowtie apertures. A record number of near-field optical elements, an array of 1,024 bowtie antenna apertures, are simultaneously employed to generate a large number of patterns by carefully controlling their working distances over the entire array using an optical gap metrology system. Our experimental results reiterated the ability of using massively-parallel near-field devices to achieve high-throughput optical nanolithography, which can be promising for many important nanotechnology applications such as computation, data storage, communication, and energy. PMID:26525906

Control of the interaction strength of photonic molecules by nanometer precise 3D fabrication.

PubMed

Rawlings, Colin D; Zientek, Michal; Spieser, Martin; Urbonas, Darius; Stöferle, Thilo; Mahrt, Rainer F; Lisunova, Yuliya; Brugger, Juergen; Duerig, Urs; Knoll, Armin W

2017-11-28

Applications for high resolution 3D profiles, so-called grayscale lithography, exist in diverse fields such as optics, nanofluidics and tribology. All of them require the fabrication of patterns with reliable absolute patterning depth independent of the substrate location and target materials. Here we present a complete patterning and pattern-transfer solution based on thermal scanning probe lithography (t-SPL) and dry etching. We demonstrate the fabrication of 3D profiles in silicon and silicon oxide with nanometer scale accuracy of absolute depth levels. An accuracy of less than 1nm standard deviation in t-SPL is achieved by providing an accurate physical model of the writing process to a model-based implementation of a closed-loop lithography process. For transfering the pattern to a target substrate we optimized the etch process and demonstrate linear amplification of grayscale patterns into silicon and silicon oxide with amplification ratios of ∼6 and ∼1, respectively. The performance of the entire process is demonstrated by manufacturing photonic molecules of desired interaction strength. Excellent agreement of fabricated and simulated structures has been achieved.

Optimized filtration for reduced defectivity and improved dispense recipe in 193-nm BARC lithography

NASA Astrophysics Data System (ADS)

Do, Phong; Pender, Joe; Lehmann, Thomas; Mc Ardle, Leo P.; Gotlinsky, Barry; Mesawich, Michael

2004-05-01

The implementation of 193 nm lithography into production has been complicated by high defectivity issues. Many companies have been struggling with high defect densities, forcing process and lithography engineers to focus their efforts on chemical filtration instead of process development. After-etch defects have complicated the effort to reduce this problem. In particular it has been determined that chemical filtration at the 90 nm node and below is a crucial item which current industry standard pump recipes and material choices are not able to address. LSI Logic and Pall Corporation have been working together exploring alternative materials and resist pump process parameters to address these issues. These changes will free up process development time by reducing these high defect density issues. This paper provides a fundamental understanding of how 20nm filtration combined with optimized resist pump set-up and dispense can significantly reduce defects in 193nm lithography. The purpose of this study is to examine the effectiveness of 20 nanometer rated filters to reduce various defects observed in bottom anti reflective coating materials. Multiple filter types were installed on a Tokyo Electron Limited Clean Track ACT8 tool utilizing two-stage resist pumps. Lithographic performance of the filtered resist and defect analysis of patterned and non-patterned wafers were performed. Optimized pump start-up and dispense recipes also were evaluated to determine their effect on defect improvements. The track system used in this experiment was a standard production tool and was not modified from its original specifications.

Maskless EUV lithography: an already difficult technology made even more complicated?

NASA Astrophysics Data System (ADS)

Chen, Yijian

2012-03-01

In this paper, we present the research progress made in maskless EUV lithography and discuss the emerging opportunities for this disruptive technology. It will be shown nanomirrors based maskless approach is one path to costeffective and defect-free EUV lithography, rather than making it even more complicated. The focus of our work is to optimize the existing vertical comb process and scale down the mirror size from several microns to sub-micron regime. The nanomirror device scaling, system configuration, and design issues will be addressed. We also report our theoretical and simulation study of reflective EUV nanomirror based imaging behavior. Dense line/space patterns are formed with an EUV nanomirror array by assigning a phase shift of π to neighboring nanomirrors. Our simulation results show that phase/intensity imbalance is an inherent characteristic of maskless EUV lithography while it only poses a manageable challenge to CD control and process window. The wafer scan and EUV laser jitter induced image blur phenomenon is discussed and a blurred imaging theory is constructed. This blur effect is found to degrade the image contrast at a level that mainly depends on the wafer scan speed.

Analysis of e-beam impact on the resist stack in e-beam lithography process

NASA Astrophysics Data System (ADS)

Indykeiwicz, K.; Paszkiewicz, B.

2013-07-01

Paper presents research on the sub-micron gate, AlGaN /GaN HEMT type transistors, fabrication by e-beam lithography and lift-off technique. The impact of the electron beam on the resists layer and the substrate was analyzed by MC method in Casino v3.2 software. The influence of technological process parameters on the metal structures resolution and quality for paths 100 nm, 300 nm and 500 nm wide and 20 μm long was studied. Qualitative simulation correspondences to the conducted experiments were obtained.

Solid Freeform Fabrication Proceedings -1999

DTIC Science & Technology

1999-08-11

geometry of the stylus. Some geometries cannot be used to acquire data if the part geometry interferes 48 with a feature on the part. Thus, the data...fabrication processing systems such as surface micro- machining and lithography . 63 Conclusion The LCVD system (figure 6) has the versatility and...part, creating STL (STereo Lithography ) or VRML (Virtual Reality Modeling Language) files, slicing them, converting into laser path files, and

Fabrication of flexible grating sensing waveguide based on nano-imprint lithography and micro-replication process

NASA Astrophysics Data System (ADS)

Liu, Yueming; Tian, Weijian; Zhang, Shaojun

2009-05-01

Soft and flexible grating sensing waveguides is urgently demanded in application of micro-bending sensing and surface distortion sensing in medical catheter and smart skin sensing unit etc. Based on Nano-imprint Lithography and micro-replication process, polymer grating waveguides with core size 4μm×20μm and pitch 0.75μm are fabricated successfully in this paper. This novel grating waveguides is soft and flexible enough for related application and with the bio-medical safe feature when used in human body catheter. Fabricated processes are presented including the fabrication of micro mould and UV-replication process, and relative skills are discussed also in this paper.

And There Was Light: Prospects for the Creation of Micro- and Nanostructures through Maskless Photolithography.

PubMed

Rühe, J

2017-09-26

In photolithographic processes, the light inducing the photochemical reactions is confined to a small volume, which enables direct writing of micro- and nanoscale features onto solid surfaces without the need of a predefined photomask. The direct writing process can be used to generate topographic patterns through photopolymerization or photo-cross-linking or can be employed to use light to generate chemical patterns on the surface with high spatial control, which would make such processes attractive for bioapplications. The prospects of maskless photolithography technologies with a focus on two-photon lithography and scanning-probe-based photochemical processes based on scanning near-field optical microscopy or beam pen lithography are discussed.

Carbon dioxide gas purification and analytical measurement for leading edge 193nm lithography

NASA Astrophysics Data System (ADS)

Riddle Vogt, Sarah; Landoni, Cristian; Applegarth, Chuck; Browning, Matt; Succi, Marco; Pirola, Simona; Macchi, Giorgio

2015-03-01

The use of purified carbon dioxide (CO2) has become a reality for leading edge 193 nm immersion lithography scanners. Traditionally, both dry and immersion 193 nm lithographic processes have constantly purged the optics stack with ultrahigh purity compressed dry air (UHPCDA). CO2 has been utilized for a similar purpose as UHPCDA. Airborne molecular contamniation (AMC) purification technologies and analytical measurement methods have been extensively developed to support the Lithography Tool Manufacturers purity requirements. This paper covers the analytical tests and characterizations carried out to assess impurity removal from 3.0 N CO2 (beverage grade) for its final utilization in 193 nm and EUV scanners.

Sequential infiltration synthesis for advanced lithography

DOEpatents

Darling, Seth B.; Elam, Jeffrey W.; Tseng, Yu-Chih; Peng, Qing

2015-03-17

A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.

Fabrication process for a gradient index x-ray lens

DOEpatents

Bionta, R.M.; Makowiecki, D.M.; Skulina, K.M.

1995-01-17

A process is disclosed for fabricating high efficiency x-ray lenses that operate in the 0.5-4.0 keV region suitable for use in biological imaging, surface science, and x-ray lithography of integrated circuits. The gradient index x-ray optics fabrication process broadly involves co-sputtering multi-layers of film on a wire, followed by slicing and mounting on block, and then ion beam thinning to a thickness determined by periodic testing for efficiency. The process enables the fabrication of transmissive gradient index x-ray optics for the 0.5-4.0 keV energy range. This process allows the fabrication of optical elements for the next generation of imaging and x-ray lithography instruments in the soft x-ray region. 13 figures.

Fabrication process for a gradient index x-ray lens

DOEpatents

Bionta, Richard M.; Makowiecki, Daniel M.; Skulina, Kenneth M.

1995-01-01

A process for fabricating high efficiency x-ray lenses that operate in the 0.5-4.0 keV region suitable for use in biological imaging, surface science, and x-ray lithography of integrated circuits. The gradient index x-ray optics fabrication process broadly involves co-sputtering multi-layers of film on a wire, followed by slicing and mounting on block, and then ion beam thinning to a thickness determined by periodic testing for efficiency. The process enables the fabrication of transmissive gradient index x-ray optics for the 0.5-4.0 keV energy range. This process allows the fabrication of optical elements for the next generation of imaging and x-ray lithography instruments m the soft x-ray region.

Challenges of anamorphic high-NA lithography and mask making

NASA Astrophysics Data System (ADS)

Hsu, Stephen D.; Liu, Jingjing

2017-06-01

Chip makers are actively working on the adoption of 0.33 numerical aperture (NA) EUV scanners for the 7-nm and 5-nm nodes (B. Turko, S. L. Carson, A. Lio, T. Liang, M. Phillips, et al., in `Proc. SPIE9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 977602 (2016) doi: 10.1117/12.2225014; A. Lio, in `Proc. SPIE9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 97760V (2016) doi: 10.1117/12.2225017). In the meantime, leading foundries and integrated device manufacturers are starting to investigate patterning options beyond the 5-nm node (O. Wood, S. Raghunathan, P. Mangat, V. Philipsen, V. Luong, et al., in `Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI', vol. 94220I (2015) doi: 10.1117/12.2085022). To minimize the cost and process complexity of multiple patterning beyond the 5-nm node, EUV high-NA single-exposure patterning is a preferred method over EUV double patterning (O. Wood, S. Raghunathan, P. Mangat, V. Philipsen, V. Luong, et al., in `Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI', vol. 94220I (2015) doi: 10.1117/12.2085022; J. van Schoot, K. van Ingen Schenau, G. Bottiglieri, K. Troost, J. Zimmerman, et al., `Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 97761I (2016) doi: 10.1117/12.2220150). The EUV high-NA scanner equipped with a projection lens of 0.55 NA is designed to support resolutions below 10 nm. The high-NA system is beneficial for enhancing resolution, minimizing mask proximity correction bias, improving normalized image log slope (NILS), and controlling CD uniformity (CDU). However, increasing NA from 0.33 to 0.55 reduces the depth of focus (DOF) significantly. Therefore, the source mask optimization (SMO) with sub-resolution assist features (SRAFs) are needed to increase DOF to meet the demanding full chip process control requirements (S. Hsu, R. Howell, J. Jia, H.-Y. Liu, K. Gronlund, et al., EUV `Proc. SPIE9048, Extreme Ultraviolet (EUV) Lithography VI', (2015) doi: 10.1117/12.2086074). To ensure no assist feature printing, the assist feature sizes need to be scaled with λ/NA. The extremely small SRAF width (below 25 nm on the reticle) is difficult to fabricate across the full reticle. In this paper, we introduce an innovative `attenuated SRAF' to improve SRAF manufacturability and still maintain the process window benefit. A new mask fabrication process is proposed to use existing mask-making capability to manufacture the attenuated SRAFs. The high-NA EUV system utilizes anamorphic reduction; 4× in the horizontal (slit) direction and 8× in the vertical (scanning) direction (J. van Schoot, K. van Ingen Schenau, G. Bottiglieri, K. Troost, J. Zimmerman, et al., `Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 97761I (2016) doi: 10.1117/12.2220150; B. Kneer, S. Migura, W. Kaiser, J. T. Neumann, J. van Schoot, in `Proc. SPIE9422, Extreme Ultraviolet (EUV) Lithography VI', vol. 94221G (2015) doi: 10.1117/12.2175488). For an anamorphic system, the magnification has an angular dependency, and thus, familiar mask specifications such as mask error factor (MEF) need to be redefined. Similarly, mask-manufacturing rule check (MRC) needs to consider feature orientation.

High-throughput electrical characterization for robust overlay lithography control

NASA Astrophysics Data System (ADS)

Devender, Devender; Shen, Xumin; Duggan, Mark; Singh, Sunil; Rullan, Jonathan; Choo, Jae; Mehta, Sohan; Tang, Teck Jung; Reidy, Sean; Holt, Jonathan; Kim, Hyung Woo; Fox, Robert; Sohn, D. K.

2017-03-01

Realizing sensitive, high throughput and robust overlay measurement is a challenge in current 14nm and advanced upcoming nodes with transition to 300mm and upcoming 450mm semiconductor manufacturing, where slight deviation in overlay has significant impact on reliability and yield1). Exponentially increasing number of critical masks in multi-patterning lithoetch, litho-etch (LELE) and subsequent LELELE semiconductor processes require even tighter overlay specification2). Here, we discuss limitations of current image- and diffraction- based overlay measurement techniques to meet these stringent processing requirements due to sensitivity, throughput and low contrast3). We demonstrate a new electrical measurement based technique where resistance is measured for a macro with intentional misalignment between two layers. Overlay is quantified by a parabolic fitting model to resistance where minima and inflection points are extracted to characterize overlay control and process window, respectively. Analyses using transmission electron microscopy show good correlation between actual overlay performance and overlay obtained from fitting. Additionally, excellent correlation of overlay from electrical measurements to existing image- and diffraction- based techniques is found. We also discuss challenges of integrating electrical measurement based approach in semiconductor manufacturing from Back End of Line (BEOL) perspective. Our findings open up a new pathway for accessing simultaneous overlay as well as process window and margins from a robust, high throughput and electrical measurement approach.

A novel double patterning approach for 30nm dense holes

NASA Astrophysics Data System (ADS)

Hsu, Dennis Shu-Hao; Wang, Walter; Hsieh, Wei-Hsien; Huang, Chun-Yen; Wu, Wen-Bin; Shih, Chiang-Lin; Shih, Steven

2011-04-01

Double Patterning Technology (DPT) was commonly accepted as the major workhorse beyond water immersion lithography for sub-38nm half-pitch line patterning before the EUV production. For dense hole patterning, classical DPT employs self-aligned spacer deposition and uses the intersection of horizontal and vertical lines to define the desired hole patterns. However, the increase in manufacturing cost and process complexity is tremendous. Several innovative approaches have been proposed and experimented to address the manufacturing and technical challenges. A novel process of double patterned pillars combined image reverse will be proposed for the realization of low cost dense holes in 30nm node DRAM. The nature of pillar formation lithography provides much better optical contrast compared to the counterpart hole patterning with similar CD requirements. By the utilization of a reliable freezing process, double patterned pillars can be readily implemented. A novel image reverse process at the last stage defines the hole patterns with high fidelity. In this paper, several freezing processes for the construction of the double patterned pillars were tested and compared, and 30nm double patterning pillars were demonstrated successfully. A variety of different image reverse processes will be investigated and discussed for their pros and cons. An economic approach with the optimized lithography performance will be proposed for the application of 30nm DRAM node.

High throughput, high resolution enzymatic lithography process: effect of crystallite size, moisture, and enzyme concentration.

PubMed

Mao, Zhantong; Ganesh, Manoj; Bucaro, Michael; Smolianski, Igor; Gross, Richard A; Lyons, Alan M

2014-12-08

By bringing enzymes into contact with predefined regions of a surface, a polymer film can be selectively degraded to form desired patterns that find a variety of applications in biotechnology and electronics. This so-called "enzymatic lithography" is an environmentally friendly process as it does not require actinic radiation or synthetic chemicals to develop the patterns. A significant challenge to using enzymatic lithography has been the need to restrict the mobility of the enzyme in order to maintain control of feature sizes. Previous approaches have resulted in low throughput and were limited to polymer films only a few nanometers thick. In this paper, we demonstrate an enzymatic lithography system based on Candida antartica lipase B (CALB) and poly(ε-caprolactone) (PCL) that can resolve fine-scale features, (<1 μm across) in thick (0.1-2.0 μm) polymer films. A Polymer Pen Lithography (PPL) tool was developed to deposit an aqueous solution of CALB onto a spin-cast PCL film. Immobilization of the enzyme on the polymer surface was monitored using fluorescence microscopy by labeling CALB with FITC. The crystallite size in the PCL films was systematically varied; small crystallites resulted in significantly faster etch rates (20 nm/min) and the ability to resolve smaller features (as fine as 1 μm). The effect of printing conditions and relative humidity during incubation is also presented. Patterns formed in the PCL film were transferred to an underlying copper foil demonstrating a "Green" approach to the fabrication of printed circuit boards.

Integration of plant viruses in electron beam lithography nanostructures.

PubMed

Alonso, Jose M; Ondarçuhu, Thierry; Bittner, Alexander M

2013-03-15

Tobacco mosaic virus (TMV) is the textbook example of a virus, and also of a self-assembling nanoscale structure. This tubular RNA/protein architecture has also found applications as biotemplate for the synthesis of nanomaterials such as wires, as tubes, or as nanoparticle assemblies. Although TMV is, being a biological structure, quite resilient to environmental conditions (temperature, chemicals), it cannot be processed in electron beam lithography (eBL) fabrication, which is the most important and most versatile method of nanoscale structuring. Here we present adjusted eBL-compatible processes that allow the incorporation of TMV in nanostructures made of positive and negative tone eBL resists. The key steps are covering TMV by polymer resists, which are only heated to 50 °C, and development (selective dissolution) in carefully selected organic solvents. We demonstrate the post-lithography biochemical functionality of TMV by selective immunocoating of the viral particles, and the use of immobilized TMV as direct immunosensor. Our modified eBL process should be applicable to incorporate a wide range of sensitive materials in nanofabrication schemes.

First Results From A Multi-Ion Beam Lithography And Processing System At The University Of Florida

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gila, Brent; Appleton, Bill R.; Fridmann, Joel

2011-06-01

The University of Florida (UF) have collaborated with Raith to develop a version of the Raith ionLiNE IBL system that has the capability to deliver multi-ion species in addition to the Ga ions normally available. The UF system is currently equipped with a AuSi liquid metal alloy ion source (LMAIS) and ExB filter making it capable of delivering Au and Si ions and ion clusters for ion beam processing. Other LMAIS systems could be developed in the future to deliver other ion species. This system is capable of high performance ion beam lithography, sputter profiling, maskless ion implantation, ion beammore » mixing, and spatial and temporal ion beam assisted writing and processing over large areas (100 mm2)--all with selected ion species at voltages from 15-40 kV and nanometer precision. We discuss the performance of the system with the AuSi LMAIS source and ExB mass separator. We report on initial results from the basic system characterization, ion beam lithography, as well as for basic ion-solid interactions.« less

Automated imprint mask cleaning for step-and-flash imprint lithography

NASA Astrophysics Data System (ADS)

Singh, Sherjang; Chen, Ssuwei; Selinidis, Kosta; Fletcher, Brian; McMackin, Ian; Thompson, Ecron; Resnick, Douglas J.; Dress, Peter; Dietze, Uwe

2009-03-01

Step-and-Flash Imprint Lithography (S-FIL) is a promising lithography strategy for semiconductor manufacturing at device nodes below 32nm. The S-FIL 1:1 pattern transfer technology utilizes a field-by-field ink jet dispense of a low viscosity liquid resist to fill the relief pattern of the device layer etched into the glass mask. Compared to other sub 40nm CD lithography methods, the resulting high resolution, high throughput through clustering, 3D patterning capability, low process complexity, and low cost of ownership (CoO) of S-FIL makes it a widely accepted technology for patterned media as well as a promising mainstream option for future CMOS applications. Preservation of mask cleanliness is essential to avoid risk of repeated printing of defects. The development of mask cleaning processes capable of removing particles adhered to the mask surface without damaging the mask is critical to meet high volume manufacturing requirements. In this paper we have presented various methods of residual (cross-linked) resist removal and final imprint mask cleaning demonstrated on the HamaTech MaskTrack automated mask cleaning system. Conventional and non-conventional (acid free) methods of particle removal have been compared and the effect of mask cleaning on pattern damage and CD integrity is also studied.

Non-CAR resists and advanced materials for Massively Parallel E-Beam Direct Write process integration

NASA Astrophysics Data System (ADS)

Pourteau, Marie-Line; Servin, Isabelle; Lepinay, Kévin; Essomba, Cyrille; Dal'Zotto, Bernard; Pradelles, Jonathan; Lattard, Ludovic; Brandt, Pieter; Wieland, Marco

2016-03-01

The emerging Massively Parallel-Electron Beam Direct Write (MP-EBDW) is an attractive high resolution high throughput lithography technology. As previously shown, Chemically Amplified Resists (CARs) meet process/integration specifications in terms of dose-to-size, resolution, contrast, and energy latitude. However, they are still limited by their line width roughness. To overcome this issue, we tested an alternative advanced non-CAR and showed it brings a substantial gain in sensitivity compared to CAR. We also implemented and assessed in-line post-lithographic treatments for roughness mitigation. For outgassing-reduction purpose, a top-coat layer is added to the total process stack. A new generation top-coat was tested and showed improved printing performances compared to the previous product, especially avoiding dark erosion: SEM cross-section showed a straight pattern profile. A spin-coatable charge dissipation layer based on conductive polyaniline has also been tested for conductivity and lithographic performances, and compatibility experiments revealed that the underlying resist type has to be carefully chosen when using this product. Finally, the Process Of Reference (POR) trilayer stack defined for 5 kV multi-e-beam lithography was successfully etched with well opened and straight patterns, and no lithography-etch bias.

Fabrication of a Polymer Micro Needle Array by Mask-Dragging X-Ray Lithography and Alignment X-Ray Lithography

NASA Astrophysics Data System (ADS)

Li, Yi-Gui; Yang, Chun-Sheng; Liu, Jing-Quan; Sugiyama, Susumu

2011-03-01

Polymer materials such as transparent thermoplastic poly(methyl methacrylate) (PMMA) have been of great interest in the research and development of integrated circuits and micro-electromechanical systems due to their relatively low cost and easy process. We fabricated PMMA-based polymer hollow microneedle arrays by mask-dragging and aligning x-ray lithography. Techniques for 3D micromachining by direct lithography using x-rays are developed. These techniques are based on using image projection in which the x-ray is used to illuminate an appropriate gold pattern on a polyimide film mask. The mask is imaged onto the PMMA sample. A pattern with an area of up to 100 × 100mm2 can be fabricated with sub-micron resolution and a highly accurate order of a few microns by using a dragging mask. The fabrication technology has several advantages, such as forming complex 3D micro structures, high throughput and low cost.

Suspended liquid subtractive lithography: printing three dimensional channels directly into uncured PDMS

NASA Astrophysics Data System (ADS)

Helmer, D.; Voigt, A.; Wagner, S.; Keller, N.; Sachsenheimer, K.; Kotz, F.; Nargang, T. M.; Rapp, B. E.

2018-02-01

Polydimethylsiloxane (PDMS) is one of the most widely used polymers for the generation of microfluidic chips. The standard procedures of soft lithography require the formation of a new master structure for every design which is timeconsuming and expensive. All channel generated by soft lithography need to be consecutively sealed by bonding which is a process that can proof to be hard to control. Channel cross-sections are largely restricted to squares or flat-topped designs and the generation of truly three-dimensional designs is not straightforward. Here we present Suspended Liquid Subtractive Lithography (SLSL) a method for generating microfluidic channels of nearly arbitrary three-dimensional structures in PDMS that do not require master formation or bonding and give circular channel cross sections which are especially interesting for mimicking in vivo environments. In SLSL, an immiscible liquid is introduced into the uncured PDMS by a capillary mounted on a 3D printer head. The liquid forms continuous "threads" inside the matrix thus creating void suspended channel structures.

Compact synchrotron radiation depth lithography facility

NASA Astrophysics Data System (ADS)

Knüppel, O.; Kadereit, D.; Neff, B.; Hormes, J.

1992-01-01

X-ray depth lithography allows the fabrication of plastic microstructures with heights of up to 1 mm but with the smallest possible lateral dimensions of about 1 μm. A resist is irradiated with ``white'' synchrotron radiation through a mask that is partially covered with x-ray absorbing microstructures. The plastic microstructure is then obtained by a subsequent chemical development of the irradiated resist. In order to irradiate a reasonably large resist area, the mask and the resist have to be ``scanned'' across the vertically thin beam of the synchrotron radiation. A flexible, nonexpensive and compact scanner apparatus has been built for x-ray depth lithography at the beamline BN1 at ELSA (the 3.5 GeV Electron Stretcher and Accelerator at the Physikalisches Institut of Bonn University). Measurements with an electronic water level showed that the apparatus limits the scanner-induced structure precision to not more than 0.02 μm. The whole apparatus is installed in a vacuum chamber thus allowing lithography under different process gases and pressures.

Mix & match electron beam & scanning probe lithography for high throughput sub-10 nm lithography

NASA Astrophysics Data System (ADS)

Kaestner, Marcus; Hofer, Manuel; Rangelow, Ivo W.

2013-03-01

The prosperous demonstration of a technique able to produce features with single nanometer (SN) resolution could guide the semiconductor industry into the desired beyond CMOS era. In the lithographic community immense efforts are being made to develop extreme ultra-violet lithography (EUVL) and multiple-e-beam direct-write systems as possible successor for next generation lithography (NGL). However, patterning below 20 nm resolution and sub-10 nm overlay alignment accuracy becomes an extremely challenging quest. Herein, the combination of electron beam lithography (EBL) or EUVL with the outstanding capabilities of closed-loop scanning proximal probe nanolithography (SPL) reveals a promising way to improve both patterning resolution and reproducibility in combination with excellent overlay and placement accuracy. In particular, the imaging and lithographic resolution capabilities provided by scanning probe microscopy (SPM) methods touches the atomic level, which expresses the theoretical limit of constructing nanoelectronic devices. Furthermore, the symbiosis between EBL (EUVL) and SPL expands the process window of EBL (EUVL) far beyond state-of-the-art allowing SPL-based pre- and post-patterning of EBL (EUVL) written features at critical dimension level with theoretically nanometer precise pattern overlay alignment. Moreover, we can modify the EBL (EUVL) pattern before as well as after the development step. In this paper we demonstrate proof of concept using the ultra-high resolution molecular glass resist calixarene. Therefor we applied Gaussian E-beam lithography system operating at 10 keV and a home-developed SPL set-up. The introduced Mix and Match lithography strategy enables a powerful use of our SPL set-up especially as post-patterning tool for inspection and repair functions below the sub-10 nm critical dimension level.

Creating Active Device Materials for Nanoelectronics Using Block Copolymer Lithography

PubMed Central

Morris, Michael A.

2017-01-01

The prolonged and aggressive nature of scaling to augment the performance of silicon integrated circuits (ICs) and the technical challenges and costs associated with this has led to the study of alternative materials that can use processing schemes analogous to semiconductor manufacturing. We examine the status of recent efforts to develop active device elements using nontraditional lithography in this article, with a specific focus on block copolymer (BCP) feature patterning. An elegant route is demonstrated using directed self-assembly (DSA) of BCPs for the fabrication of aligned tungsten trioxide (WO3) nanowires towards nanoelectronic device application. The strategy described avoids conventional lithography practices such as optical patterning as well as repeated etching and deposition protocols and opens up a new approach for device development. Nanoimprint lithography (NIL) silsesquioxane (SSQ)-based trenches were utilized in order to align a cylinder forming poly(styrene)-block-poly(4-vinylpyridine) (PS-b-P4VP) BCP soft template. We outline WO3 nanowire fabrication using a spin-on process and the symmetric current-voltage characteristics of the resulting Ti/Au (5 nm/45 nm) contacted WO3 nanowires. The results highlight the simplicity of a solution-based approach that allows creating active device elements and controlling the chemistry of specific self-assembling building blocks. The process enables one to dictate nanoscale chemistry with an unprecedented level of sophistication, forging the way for next-generation nanoelectronic devices. We lastly outline views and future research studies towards improving the current platform to achieve the desired device performance. PMID:28973987

Fabrication of 3D surface structures using grayscale lithography

NASA Astrophysics Data System (ADS)

Stilson, Christopher; Pal, Rajan; Coutu, Ronald A.

2014-03-01

The ability to design and develop 3D microstructures is important for microelectromechanical systems (MEMS) fabrication. Previous techniques used to create 3D devices included tedious steps in direct writing and aligning patterns onto a substrate followed by multiple photolithography steps using expensive, customized equipment. Additionally, these techniques restricted batch processing and placed limits on achievable shapes. Gray-scale lithography enables the fabrication of a variety of shapes using a single photolithography step followed by reactive ion etching (RIE). Micromachining 3D silicon structures for MEMS can be accomplished using gray-scale lithography along with dry anisotropic etching. In this study, we investigated: using MATLAB for mask designs; feasibility of using 1 μm Heidelberg mask maker to direct write patterns onto photoresist; using RIE processing to etch patterns into a silicon substrate; and the ability to tailor etch selectivity for precise fabrication. To determine etch rates and to obtain desired etch selectivity, parameters such as gas mixture, gas flow, and electrode power were studied. This process successfully demonstrates the ability to use gray-scale lithography and RIE for use in the study of micro-contacts. These results were used to produce a known engineered non-planer surface for testing micro-contacts. Surface structures are between 5 μm and 20 μm wide with varying depths and slopes based on mask design and etch rate selectivity. The engineered surfaces will provide more insight into contact geometries and failure modes of fixed-fixed micro-contacts.

Creating Active Device Materials for Nanoelectronics Using Block Copolymer Lithography.

PubMed

Cummins, Cian; Bell, Alan P; Morris, Michael A

2017-09-30

The prolonged and aggressive nature of scaling to augment the performance of silicon integrated circuits (ICs) and the technical challenges and costs associated with this has led to the study of alternative materials that can use processing schemes analogous to semiconductor manufacturing. We examine the status of recent efforts to develop active device elements using nontraditional lithography in this article, with a specific focus on block copolymer (BCP) feature patterning. An elegant route is demonstrated using directed self-assembly (DSA) of BCPs for the fabrication of aligned tungsten trioxide (WO₃) nanowires towards nanoelectronic device application. The strategy described avoids conventional lithography practices such as optical patterning as well as repeated etching and deposition protocols and opens up a new approach for device development. Nanoimprint lithography (NIL) silsesquioxane (SSQ)-based trenches were utilized in order to align a cylinder forming poly(styrene)- block -poly(4-vinylpyridine) (PS- b -P4VP) BCP soft template. We outline WO₃ nanowire fabrication using a spin-on process and the symmetric current-voltage characteristics of the resulting Ti/Au (5 nm/45 nm) contacted WO₃ nanowires. The results highlight the simplicity of a solution-based approach that allows creating active device elements and controlling the chemistry of specific self-assembling building blocks. The process enables one to dictate nanoscale chemistry with an unprecedented level of sophistication, forging the way for next-generation nanoelectronic devices. We lastly outline views and future research studies towards improving the current platform to achieve the desired device performance.

The lithographer's dilemma: shrinking without breaking the bank

NASA Astrophysics Data System (ADS)

Levinson, Harry J.

2013-10-01

It can no longer be assumed that the lithographic scaling which has previously driven Moore's Law will lead in the future to reduced cost per transistor. Until recently, higher prices for lithography tools were offset by improvements in scanner productivity. The necessity of using double patterning to extend scaling beyond the single exposure resolution limit of optical lithography has resulted in a sharp increase in the cost of patterning a critical construction layer that has not been offset by improvements in exposure tool productivity. Double patterning has also substantially increased the cost of mask sets. EUV lithography represents a single patterning option, but the combination of very high exposure tools prices, moderate throughput, high maintenance costs, and expensive mask blanks makes this a solution more expensive than optical double patterning but less expensive than triple patterning. Directed self-assembly (DSA) could potentially improve wafer costs, but this technology currently is immature. There are also design layout and process integration issues associated with DSA that need to be solved in order to obtain full benefit from tighter pitches. There are many approaches for improving the cost effectiveness of lithography. Innovative double patterning schemes lead to smaller die. EUV lithography productivity can be improved with higher power light sources and improved reliability. There are many technical and business challenges for extending EUV lithography to higher numerical apertures. Efficient contact hole and cut mask solutions are needed, as well as very tight overlay control, regardless of lithographic solution.

Line edge roughness (LER) mitigation studies specific to interference-like lithography

NASA Astrophysics Data System (ADS)

Baylav, Burak; Estroff, Andrew; Xie, Peng; Smith, Bruce W.

2013-04-01

Line edge roughness (LER) is a common problem to most lithography approaches and is seen as the main resolution limiter for advanced technology nodes1. There are several contributors to LER such as chemical/optical shot noise, random nature of acid diffusion, development process, and concentration of acid generator/base quencher. Since interference-like lithography (IL) is used to define one directional gridded patterns, some LER mitigation approaches specific to IL-like imaging can be explored. Two methods investigated in this work for this goal are (i) translational image averaging along the line direction and (ii) pupil plane filtering. Experiments regarding the former were performed on both interferometric and projection lithography systems. Projection lithography experiments showed a small amount of reduction in low/mid frequency LER value for image averaged cases at pitch of 150 nm (193 nm illumination, 0.93 NA) with less change for smaller pitches. Aerial image smearing did not significantly increase LER since it was directional. Simulation showed less than 1% reduction in NILS (compared to a static, smooth mask equivalent) with ideal alignment. In addition, description of pupil plane filtering on the transfer of mask roughness is given. When astigmatism-like aberrations were introduced in the pupil, transfer of mask roughness is decreased at best focus. It is important to exclude main diffraction orders from the filtering to prevent contrast and NILS loss. These ideas can be valuable as projection lithography approaches to conditions similar to IL (e.g. strong RET methods).

Ecofriendly ethanol-developable processes for electron beam lithography using positive-tone dextrin resist material

NASA Astrophysics Data System (ADS)

Takei, Satoshi; Sugino, Naoto; Hanabata, Makoto; Oshima, Akihiro; Kashiwakura, Miki; Kozawa, Takahiro; Tagawa, Seiichi

2017-07-01

From the viewpoints of the utilization of agricultural resources and advanced use of biomass, this study is aimed at expanding the resolution limits of ecofriendly ethanol-developable processes for electron-beam lithography using a positive-tone dextrin resist material with high hydrophilicity on a cellulose-based underlayer. The images of 20-nm-hole and 40-nm-line patterns with an exposure dose of approximately 1800 µC/cm2 were provided by ecofriendly ethanol-developable processes instead of the common development processes using tetramethylammonium hydroxide and organic solvents. The CF4 etching selectivity of the positive-tone dextrin resist material was approximately 10% lower than that of the polymethyl methacrylate used as a reference resist material.

Study of correlation between overlay and displacement measured by Coherent Gradient Sensing (CGS) interferometry

NASA Astrophysics Data System (ADS)

Mileham, Jeffrey; Tanaka, Yasushi; Anberg, Doug; Owen, David M.; Lee, Byoung-Ho; Bouche, Eric

2016-03-01

Within the semiconductor lithographic process, alignment control is one of the most critical considerations. In order to realize high device performance, semiconductor technology is approaching the 10 nm design rule, which requires progressively smaller overlay budgets. Simultaneously, structures are expanding in the 3rd dimension, thereby increasing the potential for inter-layer distortion. For these reasons, device patterning is becoming increasingly difficult as the portion of the overlay budget attributed to process-induced variation increases. After lithography, overlay gives valuable feedback to the lithography tool; however overlay measurements typically have limited density, especially at the wafer edge, due to throughput considerations. Moreover, since overlay is measured after lithography, it can only react to, but not predict the process-induced overlay. This study is a joint investigation in a high-volume manufacturing environment of the portion of overlay associated with displacement induced by a single process across many chambers. Displacement measurements are measured by Coherent Gradient Sensing (CGS) interferometry, which generates high-density displacement maps (>3 million points on a 300 mm wafer) such that the stresses induced die-by-die and process-by-process can be tracked in detail. The results indicate the relationship between displacement and overlay shows the ability to forecast overlay values before the lithographic process. Details of the correlation including overlay/displacement range, and lot-to-lot displacement variability are considered.

Scalable fabrication of nanostructured devices on flexible substrates using additive driven self-assembly and nanoimprint lithography

NASA Astrophysics Data System (ADS)

Watkins, James

2013-03-01

Roll-to-roll (R2R) technologies provide routes for continuous production of flexible, nanostructured materials and devices with high throughput and low cost. We employ additive-driven self-assembly to produce well-ordered polymer/nanoparticle hybrid materials that can serve as active device layers, we use highly filled nanoparticle/polymer hybrids for applications that require tailored dielectric constant or refractive index, and we employ R2R nanoimprint lithography for device scale patterning. Specific examples include the fabrication of flexible floating gate memory and large area films for optical/EM management. Our newly constructed R2R processing facility includes a custom designed, precision R2R UV-assisted nanoimprint lithography (NIL) system and hybrid nanostructured materials coaters.

X-ray lithography source

DOEpatents

Piestrup, Melvin A.; Boyers, David G.; Pincus, Cary

1991-01-01

A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and elminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an exellent moderate-priced X-ray source for lithography.

Sequential infiltration synthesis for advanced lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Darling, Seth B.; Elam, Jeffrey W.; Tseng, Yu-Chih

A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned usingmore » photolithography, electron-beam lithography or a block copolymer self-assembly process.« less

Organic solvent-free sugar-based transparency nanopatterning material derived from biomass for eco-friendly optical biochips using green lithography

NASA Astrophysics Data System (ADS)

Takei, Satoshi; Oshima, Akihiro; Oyama, Tomoko G.; Ito, Kenta; Sugahara, Kigenn; Kashiwakura, Miki; Kozawa, Takahiro; Tagawa, Seiichi

2014-05-01

An organic solvent-free sugar-based transparency nanopatterning material which had specific desired properties such as nanostructures of subwavelength grating and moth-eye antireflection, acceptable thermal stability of 160 °C, and low imaginary refractive index of less than 0.005 at 350-800 nm was proposed using electron beam lithography. The organic solvent-free sugar-based transparency nanopatterning material is expected for non-petroleum resources, environmental affair, safety, easiness of handling, and health of the working people, instead of the common developable process of tetramethylammonium hydroxide. 120 nm moth-eye antireflection nanopatterns images with exposure dose of 10 μC/cm2 were provided by specific process conditions of electron beam lithography. The developed sugar derivatives with hydroxyl groups and EB sensitive groups in the organic solvent-free sugar-based transparency nanopatterning material were applicable to future development of optical interface films of biology and electronics as a novel chemical design.

Advanced light source technologies that enable high-volume manufacturing of DUV lithography extensions

NASA Astrophysics Data System (ADS)

Cacouris, Theodore; Rao, Rajasekhar; Rokitski, Rostislav; Jiang, Rui; Melchior, John; Burfeindt, Bernd; O'Brien, Kevin

2012-03-01

Deep UV (DUV) lithography is being applied to pattern increasingly finer geometries, leading to solutions like double- and multiple-patterning. Such process complexities lead to higher costs due to the increasing number of steps required to produce the desired results. One of the consequences is that the lithography equipment needs to provide higher operating efficiencies to minimize the cost increases, especially for producers of memory devices that experience a rapid decline in sales prices of these products over time. In addition to having introduced higher power 193nm light sources to enable higher throughput, we previously described technologies that also enable: higher tool availability via advanced discharge chamber gas management algorithms; improved process monitoring via enhanced on-board beam metrology; and increased depth of focus (DOF) via light source bandwidth modulation. In this paper we will report on the field performance of these technologies with data that supports the desired improvements in on-wafer performance and operational efficiencies.

Variability-aware double-patterning layout optimization for analog circuits

NASA Astrophysics Data System (ADS)

Li, Yongfu; Perez, Valerio; Tripathi, Vikas; Lee, Zhao Chuan; Tseng, I.-Lun; Ong, Jonathan Yoong Seang

2018-03-01

The semiconductor industry has adopted multi-patterning techniques to manage the delay in the extreme ultraviolet lithography technology. During the design process of double-patterning lithography layout masks, two polygons are assigned to different masks if their spacing is less than the minimum printable spacing. With these additional design constraints, it is very difficult to find experienced layout-design engineers who have a good understanding of the circuit to manually optimize the mask layers in order to minimize color-induced circuit variations. In this work, we investigate the impact of double-patterning lithography on analog circuits and provide quantitative analysis for our designers to select the optimal mask to minimize the circuit's mismatch. To overcome the problem and improve the turn-around time, we proposed our smart "anchoring" placement technique to optimize mask decomposition for analog circuits. We have developed a software prototype that is capable of providing anchoring markers in the layout, allowing industry standard tools to perform automated color decomposition process.

Jet and flash imprint defectivity: assessment and reduction for semiconductor applications

NASA Astrophysics Data System (ADS)

Malloy, Matt; Litt, Lloyd C.; Johnson, Steve; Resnick, Douglas J.; Lovell, David

2011-04-01

Defectivity has been historically identified as a leading technical roadblock to the implementation of nanoimprint lithography for semiconductor high volume manufacturing. The lack of confidence in nanoimprint's ability to meet defect requirements originates in part from the industry's past experiences with 1X lithography and the shortage in end-user generated defect data. SEMATECH has therefore initiated a defect assessment aimed at addressing these concerns. The goal is to determine whether nanoimprint, specifically Jet and Flash Imprint Lithography from Molecular Imprints, is capable of meeting semiconductor industry defect requirements. At this time, several cycles of learning have been completed in SEMATECH's defect assessment, with promising results. J-FIL process random defectivity of < 0.1 def/cm2 has been demonstrated using a 120nm half-pitch template, providing proof of concept that a low defect nanoimprint process is possible. Template defectivity has also improved significantly as shown by a pre-production grade template at 80nm pitch. Cycles of learning continue on feature sizes down to 22nm.

Design, Fabrication and Characterization of Micro Opto-Electro-Mechanical Systems.

DTIC Science & Technology

1995-12-01

interference problems (see Fig. 3-6). Improvements in the lithography of the MCNC process would allow for grating spaces of less than 2 gm and therefore...A micro-spectrometer has been fabricated using LIGA, an acronym for lithography , electroforming, and micromolding (the acronym came from the German...location for test samples and an adjustable mirror. The beams are brought back together to form an interference pattern. At an observation screen the

Electrically conducting nanopatterns formed by chemical e-beam lithography via gold nanoparticle seeds.

PubMed

Schaal, Patrick A; Besmehn, Astrid; Maynicke, Eva; Noyong, Michael; Beschoten, Bernd; Simon, Ulrich

2012-02-07

We report the formation of thiol nanopatterns on SAM covered silicon wafers by converting sulfonic acid head groups via e-beam lithography. These thiol groups act as binding sites for gold nanoparticles, which can be enhanced to form electrically conducting nanostructures. This approach serves as a proof-of-concept for the combination of top-down and bottom-up processes for the generation of electrical devices on silicon.

Advanced electric-field scanning probe lithography on molecular resist using active cantilever

NASA Astrophysics Data System (ADS)

Kaestner, Marcus; Aydogan, Cemal; Ivanov, Tzvetan; Ahmad, Ahmad; Angelov, Tihomir; Reum, Alexander; Ishchuk, Valentyn; Krivoshapkina, Yana; Hofer, Manuel; Lenk, Steve; Atanasov, Ivaylo; Holz, Mathias; Rangelow, Ivo W.

2015-07-01

The routine "on demand" fabrication of features smaller than 10 nm opens up new possibilities for the realization of many devices. Driven by the thermally actuated piezoresistive cantilever technology, we have developed a prototype of a scanning probe lithography (SPL) platform which is able to image, inspect, align, and pattern features down to the single digit nanoregime. Here, we present examples of practical applications of the previously published electric-field based current-controlled scanning probe lithography. In particular, individual patterning tests are carried out on calixarene by using our developed table-top SPL system. We have demonstrated the application of a step-and-repeat SPL method including optical as well as atomic force microscopy-based navigation and alignment. The closed-loop lithography scheme was applied to sequentially write positive and negative tone features. Due to the integrated unique combination of read-write cycling, each single feature is aligned separately with the highest precision and inspected after patterning. This routine was applied to create a pattern step by step. Finally, we have demonstrated the patterning over larger areas, over existing topography, and the practical applicability of the SPL processes for lithography down to 13-nm pitch patterns. To enhance the throughput capability variable beam diameter electric field, current-controlled SPL is briefly discussed.

Implementation of assist features in EUV lithography

NASA Astrophysics Data System (ADS)

Jiang, Fan; Burkhardt, Martin; Raghunathan, Ananthan; Torres, Andres; Gupta, Rachit; Word, James

2015-03-01

The introduction of EUV lithography will happen at a critical feature pitch which corresponds to a k1 factor of roughly 0.45. While this number seems not very aggressive compared to recent ArF lithography nodes, the number is sufficiently low that the introduction of assist features has to be considered. While the small NA makes the k1 factor larger, the depth of focus still needs to be scaled down with wavelength. However the exposure tool's focus control is not greatly improved over the ArF tools, so other solutions to improve the depth of focus, e.g. SRAFs, are needed. On the other hand, sub-resolution assist features (SRAFs) require very small mask dimensions, which make masks more costly to write and inspect. Another disadvantage of SRAFs is the fact that they may cause pattern-dependent best focus shift due to thick mask effects. Those effects can be predicted, but the shift of best focus and the associated tilt of Bossung curves make the process more difficult to control. We investigate the impact of SRAFs on printing in EUV lithography and evaluate advantages and disadvantages. By using image quality parameters such as best focus (BF), and depth of focus (DOF), respectively with and without SRAFs, we will answer the question if we can gain a net benefit for 1D and 2D patterns by adding SRAFs. SRAFs will only be introduced if any net improvement in process variation (PV) outweighs the additional expense of assist patterning on the mask. In this paper, we investigate the difference in printing behavior of symmetric and asymmetric SRAF placement and whether through slit effect needs to be considered in SRAF placement for EUV lithography.

Interference lithography for optical devices and coatings

NASA Astrophysics Data System (ADS)

Juhl, Abigail Therese

Interference lithography can create large-area, defect-free nanostructures with unique optical properties. In this thesis, interference lithography will be utilized to create photonic crystals for functional devices or coatings. For instance, typical lithographic processing techniques were used to create 1, 2 and 3 dimensional photonic crystals in SU8 photoresist. These structures were in-filled with birefringent liquid crystal to make active devices, and the orientation of the liquid crystal directors within the SU8 matrix was studied. Most of this thesis will be focused on utilizing polymerization induced phase separation as a single-step method for fabrication by interference lithography. For example, layered polymer/nanoparticle composites have been created through the one-step two-beam interference lithographic exposure of a dispersion of 25 and 50 nm silica particles within a photopolymerizable mixture at a wavelength of 532 nm. In the areas of constructive interference, the monomer begins to polymerize via a free-radical process and concurrently the nanoparticles move into the regions of destructive interference. The holographic exposure of the particles within the monomer resin offers a single-step method to anisotropically structure the nanoconstituents within a composite. A one-step holographic exposure was also used to fabricate self-healing coatings that use water from the environment to catalyze polymerization. Polymerization induced phase separation was used to sequester an isocyanate monomer within an acrylate matrix. Due to the periodic modulation of the index of refraction between the monomer and polymer, the coating can reflect a desired wavelength, allowing for tunable coloration. When the coating is scratched, polymerization of the liquid isocyanate is catalyzed by moisture in air; if the indices of the two polymers are matched, the coatings turn transparent after healing. Interference lithography offers a method of creating multifunctional self-healing coatings that readout when damage has occurred.

PMJ 2007 panel discussion overview: double exposure and double patterning for 32-nm half-pitch design node

NASA Astrophysics Data System (ADS)

Nagaoka, Yoshinori; Watanabe, Hidehiro

2007-10-01

As part of the technical program in Photomask Japan 2007, we held a panel discussion to discuss challenges and solutions for the double exposure and double patterning lithography technique for 32nm half-pitch design node. 4 panelists, Rik Jonckheere of IMEC, Belgium), Tsann-Binn Chiou of ASML Taiwan Ltd., Taiwan), Judy Huckabay of Cadence Design Systems Inc. (USA) and Yoshimitsu Okuda of Toppan Printing Co., Ltd., Japan) were invited to represent each key technical area. We also took a survey from the PMJ attendees prior to the panel discussion, to vote which key technical area they think the challenge exists for the 32nm half-pitch DE/DP lithography. The result of the survey was also presented during the panel discussion. One would intuitively think that by using a DE/DP technique you're relaxing the design rule by 2x, thus for 32nm node it's essentially the 65nm process- you're just repeating it 2 times. Well, not exactly, as identified by the panelists and the participants in the discussion. We recognized the difficulties in the LSI fabrication process steps, the lithography tool overlay, photomask CD and registration, and the issue of data splitting conflict. These difficulties are big challenge for both LSI and photomask manufactures; however, we have confirmed some solutions are already examined by the theoretical and experimental works of the people in research. Despite these difficulties, we are convinced that the immersion lithography with double exposure and double patterning techniques is one of the most promising candidates of the lithography for 32nm half pitch design node.

1D design style implications for mask making and CEBL

NASA Astrophysics Data System (ADS)

Smayling, Michael C.

2013-09-01

At advanced nodes, CMOS logic is being designed in a highly regular design style because of the resolution limitations of optical lithography equipment. Logic and memory layouts using 1D Gridded Design Rules (GDR) have been demonstrated to nodes beyond 12nm.[1-4] Smaller nodes will require the same regular layout style but with multiple patterning for critical layers. One of the significant advantages of 1D GDR is the ease of splitting layouts into lines and cuts. A lines and cuts approach has been used to achieve good pattern fidelity and process margin to below 12nm.[4] Line scaling with excellent line-edge roughness (LER) has been demonstrated with self-aligned spacer processing.[5] This change in design style has important implications for mask making: • The complexity of the masks will be greatly reduced from what would be required for 2D designs with very complex OPC or inverse lithography corrections. • The number of masks will initially increase, as for conventional multiple patterning. But in the case of 1D design, there are future options for mask count reduction. • The line masks will remain simple, with little or no OPC, at pitches (1x) above 80nm. This provides an excellent opportunity for continual improvement of line CD and LER. The line pattern will be processed through a self-aligned pitch division sequence to divide pitch by 2 or by 4. • The cut masks can be done with "simple OPC" as demonstrated to beyond 12nm.[6] Multiple simple cut masks may be required at advanced nodes. "Coloring" has been demonstrated to below 12nm for two colors and to 8nm for three colors. • Cut/hole masks will eventually be replaced by e-beam direct write using complementary e-beam lithography (CEBL).[7-11] This transition is gated by the availability of multiple column e-beam systems with throughput adequate for high- volume manufacturing. A brief description of 1D and 2D design styles will be presented, followed by examples of 1D layouts. Mask complexity for 1D layouts patterned directly will be compared to mask complexity for lines and cuts at nodes larger than 20nm. No such comparison is possible below 20nm since single-patterning does not work below ~80nm pitch using optical exposure tools. Also discussed will be recently published wafer results for line patterns with pitch division by-2 and by-4 at sub-12nm nodes, plus examples of post-etch results for 1D patterns done with cut masks and compared to cuts exposed by a single-column e-beam direct write system.

An improved method for characterizing photoresist lithographic and defectivity performance for sub-20nm node lithography

NASA Astrophysics Data System (ADS)

Amblard, Gilles; Purdy, Sara; Cooper, Ryan; Hockaday, Marjory

2016-03-01

The overall quality and processing capability of lithographic materials are critical for ensuring high device yield and performance at sub-20nm technology nodes in a high volume manufacturing environment. Insufficient process margin and high line width roughness (LWR) cause poor manufacturing control, while high defectivity causes product failures. In this paper, we focus on the most critical layer of a sub-20nm technology node LSI device, and present an improved method for characterizing both lithographic and post-patterning defectivity performance of state-of-the-art immersion photoresists. Multiple formulations from different suppliers were used and compared. Photoresists were tested under various process conditions, and multiple lithographic metrics were investigated (depth of focus, exposure dose latitude, line width roughness, etc.). Results were analyzed and combined using an innovative approach based on advanced software, providing clearer results than previously available. This increased detail enables more accurate performance comparisons among the different photoresists. Post-patterning defectivity was also quantified, with defects reviewed and classified using state-of-the-art inspection tools. Correlations were established between the lithographic and post-patterning defectivity performances for each material, and overall ranking was established among the photoresists, enabling the selection of the best performer for implementation in a high volume manufacturing environment.

Merging Bottom-Up with Top-Down: Continuous Lamellar Networks and Block Copolymer Lithography

NASA Astrophysics Data System (ADS)

Campbell, Ian Patrick

Block copolymer lithography is an emerging nanopatterning technology with capabilities that may complement and eventually replace those provided by existing optical lithography techniques. This bottom-up process relies on the parallel self-assembly of macromolecules composed of covalently linked, chemically distinct blocks to generate periodic nanostructures. Among the myriad potential morphologies, lamellar structures formed by diblock copolymers with symmetric volume fractions have attracted the most interest as a patterning tool. When confined to thin films and directed to assemble with interfaces perpendicular to the substrate, two-dimensional domains are formed between the free surface and the substrate, and selective removal of a single block creates a nanostructured polymeric template. The substrate exposed between the polymeric features can subsequently be modified through standard top-down microfabrication processes to generate novel nanostructured materials. Despite tremendous progress in our understanding of block copolymer self-assembly, continuous two-dimensional materials have not yet been fabricated via this robust technique, which may enable nanostructured material combinations that cannot be fabricated through bottom-up methods. This thesis aims to study the effects of block copolymer composition and processing on the lamellar network morphology of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) and utilize this knowledge to fabricate continuous two-dimensional materials through top-down methods. First, block copolymer composition was varied through homopolymer blending to explore the physical phenomena surrounding lamellar network continuity. After establishing a framework for tuning the continuity, the effects of various processing parameters were explored to engineer the network connectivity via defect annihilation processes. Precisely controlling the connectivity and continuity of lamellar networks through defect engineering and optimizing the block copolymer lithography process thus enabled the top-down fabrication of continuous two-dimensional gold networks with nanoscale properties. The lamellar structure of these networks was found to confer unique mechanical properties on the nanowire networks and suggests that materials templated via this method may be excellent candidates for integration into stretchable and flexible devices.

Comprehensive analysis of statistical and model-based overlay lot disposition methods

NASA Astrophysics Data System (ADS)

Crow, David A.; Flugaur, Ken; Pellegrini, Joseph C.; Joubert, Etienne L.

2001-08-01

Overlay lot disposition algorithms in lithography occupy some of the highest leverage decision points in the microelectronic manufacturing process. In a typical large volume sub-0.18micrometers fab the lithography lot disposition decision is made about 500 times per day. Each decision will send a lot of wafers either to the next irreversible process step or back to rework in an attempt to improve unacceptable overlay performance. In the case of rework, the intention is that the reworked lot will represent better yield (and thus more value) than the original lot and that the enhanced lot value will exceed the cost of rework. Given that the estimated cost of reworking a critical-level lot is around 10,000 (based upon the opportunity cost of consuming time on a state-of-the-art DUV scanner), we are faced with the implication that the lithography lot disposition decision process impacts up to 5 million per day in decisions. That means that a 1% error rate in this decision process represents over 18 million per year lost in profit for a representative sit. Remarkably, despite this huge leverage, the lithography lot disposition decision algorithm usually receives minimal attention. In many cases, this lack of attention has resulted in the retention of sub-optimal algorithms from earlier process generations and a significant negative impact on the economic output of many high-volume manufacturing sites. An ideal lot- dispositioning algorithm would be an algorithm that results into the best economic decision being made every time - lots would only be reworked where the expected value (EV) of the reworked lot minus the expected value of the original lot exceeds the cost of the rework: EV(reworked lot)- EV(original lot)>COST(rework process) Calculating the above expected values in real-time has generally been deemed too complicated and maintenance-intensive to be practical for fab operations, so a simplified rule is typically used.

Surface phenomena related to mirror degradation in extreme ultraviolet (EUV) lithography

NASA Astrophysics Data System (ADS)

Madey, Theodore E.; Faradzhev, Nadir S.; Yakshinskiy, Boris V.; Edwards, N. V.

2006-12-01

One of the most promising methods for next generation device manufacturing is extreme ultraviolet (EUV) lithography, which uses 13.5 nm wavelength radiation generated from freestanding plasma-based sources. The short wavelength of the incident illumination allows for a considerable decrease in printed feature size, but also creates a range of technological challenges not present for traditional optical lithography. Contamination and oxidation form on multilayer reflecting optics surfaces that not only reduce system throughput because of the associated reduction in EUV reflectivity, but also introduce wavefront aberrations that compromise the ability to print uniform features. Capping layers of ruthenium, films ∼2 nm thick, are found to extend the lifetime of Mo/Si multilayer mirrors used in EUV lithography applications. However, reflectivities of even the Ru-coated mirrors degrade in time during exposure to EUV radiation. Ruthenium surfaces are chemically reactive and are very effective as heterogeneous catalysts. In the present paper we summarize the thermal and radiation-induced surface chemistry of bare Ru exposed to gases; the emphasis is on H2O vapor, a dominant background gas in vacuum processing chambers. Our goal is to provide insights into the fundamental physical processes that affect the reflectivity of Ru-coated Mo/Si multilayer mirrors exposed to EUV radiation. Our ultimate goal is to identify and recommend practices or antidotes that may extend mirror lifetimes.

Fabrication of three-dimensional millimeter-height structures using direct ultraviolet lithography on liquid-state photoresist for simple and fast manufacturing

NASA Astrophysics Data System (ADS)

Kim, Jungkwun; Yoon, Yong-Kyu

2015-07-01

A rapid three-dimensional (3-D) ultraviolet (UV) lithography process for the fabrication of millimeter-tall high aspect ratio complex structures is presented. The liquid-state negative-tone photosensitive polyurethane, LF55GN, has been directly photopatterned using multidirectionally projected UV light for 3-D micropattern formation. The proposed lithographic scheme enabled us to overcome the maximum height obtained with a photopatternable epoxy, SU8, which has been conventionally most commonly used for the fabrication of tall and high aspect ratio microstructures. Also, the fabrication process time has been significantly reduced by eliminating photoresist-baking steps. Computer-controlled multidirectional UV lithography has been employed to fabricate 3-D structures, where the UV-exposure substrate is dynamically tilt-rotating during UV exposure to create various 3-D ray traces in the polyurethane layer. LF55GN has been characterized to provide feasible fabrication conditions for the multidirectional UV lithography. Very tall structures including a 6-mm tall triangular slab and a 5-mm tall hexablaze have been successfully fabricated. A 4.5-mm tall air-lifted polymer-core bowtie monopole antenna, which is the tallest monopole structure fabricated by photolithography and subsequent metallization, has been successfully demonstrated. The antenna shows a resonant radiation frequency of 12.34 GHz, a return loss of 36 dB, and a 10 dB bandwidth of 7%.

Nano-imprint lithography using poly (methyl methacrylate) (PMMA) and polystyrene (PS) polymers

NASA Astrophysics Data System (ADS)

Ting, Yung-Chiang; Shy, Shyi-Long

2016-04-01

Nano-imprinting lithography (NIL) technology, as one of the most promising fabrication technologies, has been demonstrated to be a powerful tool for large-area replication up to wafer-level, with features down to nanometer scale. The cost of resists used for NIL is important for wafer-level large-area replication. This study aims to develop capabilities in patterning larger area structure using thermal NIL. The commercial available Poly (Methyl Methacrylate) (PMMA) and Polystyrene (PS) polymers possess a variety of characteristics desirable for NIL, such as low material cost, low bulkvolumetric shrinkage, high spin coating thickness uniformity, high process stability, and acceptable dry-etch resistance. PMMA materials have been utilized for positive electron beam lithography for many years, offering high resolution capability and wide process latitude. In addition, it is preferable to have a negative resist like PMMA, which is a simple polymer with low cost and practically unlimited shelf life, and can be dissolved easily using commercial available Propylene glycol methyl ether acetate (PGMEA) safer solvent to give the preferred film thickness. PS is such a resist, as it undergoes crosslinking when exposed to deep UV light or an electron beam and can be used for NIL. The result is a cost effective patterning larger area structure using thermal nano-imprint lithography (NIL) by using commercial available PMMA and PS ploymers as NIL resists.

Improvement of sub-20nm pattern quality with dose modulation technique for NIL template production

NASA Astrophysics Data System (ADS)

Yagawa, Keisuke; Ugajin, Kunihiro; Suenaga, Machiko; Kanamitsu, Shingo; Motokawa, Takeharu; Hagihara, Kazuki; Arisawa, Yukiyasu; Kobayashi, Sachiko; Saito, Masato; Ito, Masamitsu

2016-04-01

Nanoimprint lithography (NIL) technology is in the spotlight as a next-generation semiconductor manufacturing technique for integrated circuits at 22 nm and beyond. NIL is the unmagnified lithography technique using template which is replicated from master templates. On the other hand, master templates are currently fabricated by electron-beam (EB) lithography[1]. In near future, finer patterns less than 15nm will be required on master template and EB data volume increases exponentially. So, we confront with a difficult challenge. A higher resolution EB mask writer and a high performance fabrication process will be required. In our previous study, we investigated a potential of photomask fabrication process for finer patterning and achieved 15.5nm line and space (L/S) pattern on template by using VSB (Variable Shaped Beam) type EB mask writer and chemically amplified resist. In contrast, we found that a contrast loss by backscattering decreases the performance of finer patterning. For semiconductor devices manufacturing, we must fabricate complicated patterns which includes high and low density simultaneously except for consecutive L/S pattern. Then it's quite important to develop a technique to make various size or coverage patterns all at once. In this study, a small feature pattern was experimentally formed on master template with dose modulation technique. This technique makes it possible to apply the appropriate exposure dose for each pattern size. As a result, we succeed to improve the performance of finer patterning in bright field area. These results show that the performance of current EB lithography process have a potential to fabricate NIL template.

Direct-write maskless lithography using patterned oxidation of Si-substrate Induced by femtosecond laser pulses

NASA Astrophysics Data System (ADS)

Kiani, Amirkianoosh; Venkatakrishnan, Krishnan; Tan, Bo

2013-03-01

In this study we report a new method for direct-write maskless lithography using oxidized silicon layer induced by high repetition (MHz) ultrafast (femtosecond) laser pulses under ambient condition. The induced thin layer of predetermined pattern can act as an etch stop during etching process in alkaline etchants such as KOH. The proposed method can be leading to promising solutions for direct-write maskless lithography technique since the proposed method offers a higher degree of flexibility and reduced time and cost of fabrication which makes it particularly appropriate for rapid prototyping and custom scale manufacturing. A Scanning Electron Microscope (SEM), Micro-Raman, Energy Dispersive X-ray (EDX), optical microscope and X-ray diffraction spectroscopy (XRD) were used to evaluate the quality of oxidized layer induced by laser pulses.

Sub-micron lines patterning into silica using water developable chitosan bioresist films for eco-friendly positive tone e-beam and UV lithography

NASA Astrophysics Data System (ADS)

Caillau, Mathieu; Chevalier, Céline; Crémillieu, Pierre; Delair, Thierry; Soppera, Olivier; Leuschel, Benjamin; Ray, Cédric; Moulin, Christophe; Jonin, Christian; Benichou, Emmanuel; Brevet, Pierre-François; Yeromonahos, Christelle; Laurenceau, Emmanuelle; Chevolot, Yann; Leclercq, Jean-Louis

2018-03-01

Biopolymers represent natural, renewable and abundant materials. Their use is steadily growing in various areas (food, health, building …) but, in lithography, despite some works, resists, solvents and developers are still oil-based and hazardous chemicals. In this work, we replaced synthetic resist by chitosan, a natural, abundant and hydrophilic polysaccharide. High resolution sub-micron patterns were obtained through chitosan films as water developable, chemically unmodified, positive tone mask resist for an eco-friendly electron beam and deep-UV (193 nm) lithography process. Sub-micron patterns were also successfully obtained using a 248 nm photomasker thanks to the addition of biosourced photoactivator, riboflavin. Patterns were then transferred by plasma etching into silica even for high resolution patterns.

Fabrication of a negative PMMA master mold for soft-lithography by MeV ion beam lithography

NASA Astrophysics Data System (ADS)

Puttaraksa, Nitipon; Unai, Somrit; Rhodes, Michael W.; Singkarat, Kanda; Whitlow, Harry J.; Singkarat, Somsorn

2012-02-01

In this study, poly(methyl methacrylate) (PMMA) was investigated as a negative resist by irradiation with a high-fluence 2 MeV proton beam. The beam from a 1.7 MV Tandetron accelerator at the Plasma and Beam Physics Research Facility (PBP) of Chiang Mai University is shaped by a pair of computer-controlled L-shaped apertures which are used to expose rectangular pattern elements with 1-1000 μm side length. Repeated exposure of rectangular pattern elements allows a complex pattern to be built up. After subsequent development, the negative PMMA microstructure was used as a master mold for casting poly(dimethylsiloxane) (PDMS) following a standard soft-lithography process. The PDMS chip fabricated by this technique was demonstrated to be a microfluidic device.

X-ray lithography source

DOEpatents

Piestrup, M.A.; Boyers, D.G.; Pincus, C.

1991-12-31

A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits is disclosed. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and eliminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an excellent moderate-priced X-ray source for lithography. 26 figures.

Fabrication of sub-12 nm thick silicon nanowires by processing scanning probe lithography masks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kyoung Ryu, Yu; Garcia, Ricardo, E-mail: r.garcia@csic.es; Aitor Postigo, Pablo

2014-06-02

Silicon nanowires are key elements to fabricate very sensitive mechanical and electronic devices. We provide a method to fabricate sub-12 nm silicon nanowires in thickness by combining oxidation scanning probe lithography and anisotropic dry etching. Extremely thin oxide masks (0.3–1.1 nm) are transferred into nanowires of 2–12 nm in thickness. The width ratio between the mask and the silicon nanowire is close to one which implies that the nanowire width is controlled by the feature size of the nanolithography. This method enables the fabrication of very small single silicon nanowires with cross-sections below 100 nm{sup 2}. Those values are the smallest obtained withmore » a top-down lithography method.« less

Manufacturability improvements in EUV resist processing toward NXE:3300 processing

NASA Astrophysics Data System (ADS)

Kuwahara, Yuhei; Matsunaga, Koichi; Shimoaoki, Takeshi; Kawakami, Shinichiro; Nafus, Kathleen; Foubert, Philippe; Goethals, Anne-Marie; Shimura, Satoru

2014-03-01

As the design rule of semiconductor process gets finer, extreme ultraviolet lithography (EUVL) technology is aggressively studied as a process for 22nm half pitch and beyond. At present, the studies for EUV focus on manufacturability. It requires fine resolution, uniform, smooth patterns and low defectivity, not only after lithography but also after the etch process. In the first half of 2013, a CLEAN TRACKTM LITHIUS ProTMZ-EUV was installed at imec for POR development in preparation of the ASML NXE:3300. This next generation coating/developing system is equipped with state of the art defect reduction technology. This tool with advanced functions can achieve low defect levels. This paper reports on the progress towards manufacturing defectivity levels and latest optimizations towards the NXE:3300 POR for both lines/spaces and contact holes at imec.

Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns.

PubMed

Barbagini, Francesca; Bengoechea-Encabo, Ana; Albert, Steven; Martinez, Javier; Sanchez García, Miguel Angel; Trampert, Achim; Calleja, Enrique

2011-12-14

Precise and reproducible surface nanopatterning is the key for a successful ordered growth of GaN nanocolumns. In this work, we point out the main technological issues related to the patterning process, mainly surface roughness and cleaning, and mask adhesion to the substrate. We found that each of these factors, process-related, has a dramatic impact on the subsequent selective growth of the columns inside the patterned holes. We compare the performance of e-beam lithography, colloidal lithography, and focused ion beam in the fabrication of hole-patterned masks for ordered columnar growth. These results are applicable to the ordered growth of nanocolumns of different materials.

Machine learning for inverse lithography: using stochastic gradient descent for robust photomask synthesis

NASA Astrophysics Data System (ADS)

Jia, Ningning; Y Lam, Edmund

2010-04-01

Inverse lithography technology (ILT) synthesizes photomasks by solving an inverse imaging problem through optimization of an appropriate functional. Much effort on ILT is dedicated to deriving superior masks at a nominal process condition. However, the lower k1 factor causes the mask to be more sensitive to process variations. Robustness to major process variations, such as focus and dose variations, is desired. In this paper, we consider the focus variation as a stochastic variable, and treat the mask design as a machine learning problem. The stochastic gradient descent approach, which is a useful tool in machine learning, is adopted to train the mask design. Compared with previous work, simulation shows that the proposed algorithm is effective in producing robust masks.

Contact patterning strategies for 32nm and 28nm technology

NASA Astrophysics Data System (ADS)

Morgenfeld, Bradley; Stobert, Ian; An, Ju j.; Kanai, Hideki; Chen, Norman; Aminpur, Massud; Brodsky, Colin; Thomas, Alan

2011-04-01

As 193 nm immersion lithography is extended indefinitely to sustain technology roadmaps, there is increasing pressure to contain escalating lithography costs by identifying patterning solutions that can minimize the use of multiple-pass processes. Contact patterning for the 32/28 nm technology nodes has been greatly facilitated by just-in-time introduction of new process enablers that allow the simultaneous support of flexible foundry-oriented ground rules alongside highperformance technology, while also migrating to a single-pass patterning process. The incorporation of device based performance metrics along with rigorous patterning and structural variability studies were critical in the evaluation of material innovation for improved resolution and CD shrink along with novel data preparation flows utilizing aggressive strategies for SRAF insertion and retargeting.

High order field-to-field corrections for imaging and overlay to achieve sub 20-nm lithography requirements

NASA Astrophysics Data System (ADS)

Mulkens, Jan; Kubis, Michael; Hinnen, Paul; de Graaf, Roelof; van der Laan, Hans; Padiy, Alexander; Menchtchikov, Boris

2013-04-01

Immersion lithography is being extended to the 20-nm and 14-nm node and the lithography performance requirements need to be tightened further to enable this shrink. In this paper we present an integral method to enable high-order fieldto- field corrections for both imaging and overlay, and we show that this method improves the performance with 20% - 50%. The lithography architecture we build for these higher order corrections connects the dynamic scanner actuators with the angle resolved scatterometer via a separate application server. Improvements of CD uniformity are based on enabling the use of freeform intra-field dose actuator and field-to-field control of focus. The feedback control loop uses CD and focus targets placed on the production mask. For the overlay metrology we use small in-die diffraction based overlay targets. Improvements of overlay are based on using the high order intra-field correction actuators on a field-tofield basis. We use this to reduce the machine matching error, extending the heating control and extending the correction capability for process induced errors.

Triple/quadruple patterning layout decomposition via linear programming and iterative rounding

NASA Astrophysics Data System (ADS)

Lin, Yibo; Xu, Xiaoqing; Yu, Bei; Baldick, Ross; Pan, David Z.

2017-04-01

As the feature size of the semiconductor technology scales down to 10 nm and beyond, multiple patterning lithography (MPL) has become one of the most practical candidates for lithography, along with other emerging technologies, such as extreme ultraviolet lithography (EUVL), e-beam lithography (EBL), and directed self-assembly. Due to the delay of EUVL and EBL, triple and even quadruple patterning is considered to be used for lower metal and contact layers with tight pitches. In the process of MPL, layout decomposition is the key design stage, where a layout is split into various parts and each part is manufactured through a separate mask. For metal layers, stitching may be allowed to resolve conflicts, whereas it is forbidden for contact and via layers. We focus on the application of layout decomposition where stitching is not allowed, such as for contact and via layers. We propose a linear programming (LP) and iterative rounding solving technique to reduce the number of nonintegers in the LP relaxation problem. Experimental results show that the proposed algorithms can provide high quality decomposition solutions efficiently while introducing as few conflicts as possible.

3D Microfabrication Using Emulsion Mask Grayscale Photolithography Technique

NASA Astrophysics Data System (ADS)

Lee, Tze Pin; Mohamed, Khairudin

2016-02-01

Recently, the rapid development of technology such as biochips, microfluidic, micro-optical devices and micro-electromechanical-systems (MEMS) demands the capability to create complex design of three-dimensional (3D) microstructures. In order to create 3D microstructures, the traditional photolithography process often requires multiple photomasks to form 3D pattern from several stacked photoresist layers. This fabrication method is extremely time consuming, low throughput, costly and complicated to conduct for high volume manufacturing scale. On the other hand, next generation lithography such as electron beam lithography (EBL), focused ion beam lithography (FIB) and extreme ultraviolet lithography (EUV) are however too costly and the machines require expertise to setup. Therefore, the purpose of this study is to develop a simplified method in producing 3D microstructures using single grayscale emulsion mask technique. By using this grayscale fabrication method, microstructures of thickness as high as 500μm and as low as 20μm are obtained in a single photolithography exposure. Finally, the fabrication of 3D microfluidic channel has been demonstrated by using this grayscale photolithographic technique.

Demonstration of an N7 integrated fab process for metal oxide EUV photoresist

NASA Astrophysics Data System (ADS)

De Simone, Danilo; Mao, Ming; Kocsis, Michael; De Schepper, Peter; Lazzarino, Frederic; Vandenberghe, Geert; Stowers, Jason; Meyers, Stephen; Clark, Benjamin L.; Grenville, Andrew; Luong, Vinh; Yamashita, Fumiko; Parnell, Doni

2016-03-01

Inpria has developed a directly patternable metal oxide hard-mask as a robust, high-resolution photoresist for EUV lithography. In this paper we demonstrate the full integration of a baseline Inpria resist into an imec N7 BEOL block mask process module. We examine in detail both the lithography and etch patterning results. By leveraging the high differential etch resistance of metal oxide photoresists, we explore opportunities for process simplification and cost reduction. We review the imaging results from the imec N7 block mask patterns and its process windows as well as routes to maximize the process latitude, underlayer integration, etch transfer, cross sections, etch equipment integration from cross metal contamination standpoint and selective resist strip process. Finally, initial results from a higher sensitivity Inpria resist are also reported. A dose to size of 19 mJ/cm2 was achieved to print pillars as small as 21nm.

Printability of 1 x reticle defects for submicron design rules

NASA Astrophysics Data System (ADS)

Schurz, Dan L.; Flack, Warren W.; Newman, Gary

1997-02-01

As the push for improved resolution in wafer lithography intensifies and 0.18 micrometer devices are nearing production, the potential impact of subhalf micron reticle defects has become a growing concern. There have been several studies on the printability of subhalf-micron defects on high resolution reduction photolithography equipment. These studies have been extended to 1X lithography systems and more recently to advanced sub-micron 1X steppers. Previous studies have indicated that 0.20 micrometer opaque and 0.25 micrometer clear pinhole defects were at the margins of adversely impacting 0.65 micrometer lithography on a 1X stepper. However, due to the limited number of defects at these sizes on the reticle, definitive conclusions on printability could not be drawn. An additional study, using a three dimensional (3D) optical lithography simulation program, has shown defect size, proximity to an adjacent feature, and feature pitch to be significant factors contributing to reticle defect printability. Using the simulation findings as a guide, a new reticle was designed to contain an increased number of clear pinhole and opaque defects in the 0.15 to 0.30 micrometer range located in multiple pitches of both horizontal and vertical line/space pairs. Defect printability was determined using a 1X i-line projection stepper with focus and exposure optimized for nominal critical dimensions of 0.65 micrometer. The reticle and wafer defects were measured using low voltage SEM metrology. Simulation and experimental results have shown that pitch is the most significant contributor in the printability of clear pinhole, opaque, square and aspect ratio defects. In general, the impact of defect proximity to an adjacent feature is less extreme than the effect of pitch, but is more pronounced for clear pinhole defects. This study suggests that simulation can be a useful tool to help lithographers understand the behavior of reticle defects for particular layout design parameters. Consequently, simulation can be used to develop realistic reticle defect specifications with mask vendors, and improve cost-effectiveness. Defect printability simulation can also be used to predict the effect of known defects on existing reticles to determine if these reticles should be used for manufacturing.

Double exposure technique for 45nm node and beyond

NASA Astrophysics Data System (ADS)

Hsu, Stephen; Park, Jungchul; Van Den Broeke, Douglas; Chen, J. Fung

2005-11-01

The technical challenges in using F2 lithography for the 45nm node, along with the insurmountable difficulties in EUV lithography, has driven the semiconductor chipmaker into the low k1 lithography era under the pressure of ever decreasing feature sizes. Extending lithography towards lower k1 puts heavy demand on the resolution enhancement technique (RET), exposure tool, and the need for litho friendly design. Hyper numerical aperture (NA) exposure tools, immersion, and double exposure techniques (DET's) are the promising methods to extend lithography manufacturing to the 45nm node at k1 factors below 0.3. Scattering bars (SB's) have become an integral part of the lithography process as chipmakers move to production at ever lower k1 factors. To achieve better critical dimension (CD) control, polarization is applied to enhance the image contrast in the preferential imaging orientation, which increases the risk of SB printability. The optimum SB width is approximately (0.20 ~ 0.25)*(λ/NA). When the SB width becomes less than the exposure wavelength on the 4X mask, Kirchhoff's scalar theory under predicts the SB intensity. The optical weighting factor of the SB increases (Figure 1b) and the SB's become more susceptible to printing. Meanwhile, under hyper NA conditions, the effectiveness of "subresolution" SB's is significantly diminished. A full-sized scattering bars (FSB) scheme becomes necessary. Double exposure methods, such as using ternary 6% attenuated PSM (attPSM) for DDL, are good imaging solutions that can reach and likely go beyond the 45nm node. Today DDL, using binary chrome masks, is capable of printing 65 nm device patterns. In this work, we investigate the use of DET with 6% attPSM masks to target 45nm node device. The SB scalability and printability issues can be taken cared of by using "mutual trimming", i.e., with the combined energy from the two exposures. In this study, we share our findings of using DET to pattern a 45nm node device design with polarization and immersion. We also explore other double patterning methods which in addition to having two exposures, incorporates double coat/developing/etch processing to break the 0.25 k1 barrier.

Development of a 0.1 μm linewidth fabrication process for x-ray lithography with a laser plasma source

NASA Astrophysics Data System (ADS)

Bobkowski, Romuald; Fedosejevs, Robert; Broughton, James N.

1999-06-01

A process has been developed for the purpose of fabricating 0.1 micron linewidth interdigital electrode patterns based on proximity x-ray lithography using a laser-plasma source. Such patterns are required in the manufacture of surface acoustic wave devices. The x-ray lithography was carried out using emission form a Cu plasma produced by a 15Hz, 248nm KrF excimer laser. A temporally multiplexed 50ps duration seed pulse was used to extract the KrF laser energy producing a train of several 50ps pulses spaced approximately 2ns apart within each output pulse. Each short pulse within the train gave the high focal spot intensity required to achieve high efficiency emission of keV x-rays. The first stage of the overall process involves the fabrication of x-ray mask patterns on 1 micron thick Si3N4 membranes using 3-beam lithography followed by gold electroplating. The second stage involves x-ray exposure of a chemically amplified resist through the mask patterns to produce interdigital electrode patterns with 0.1 micron linewidth. Helium background gas and thin polycarbonate/aluminum filters are employed to prevent debris particles from the laser-plasma source form reaching the exposed sample. A computer control system fires the laser and monitors the x-ray flux from the laser-plasma source to insure the desired x-ray exposure is achieved at the resist. In order to reduce diffusion effects in the chemically amplified resist during the post exposure bake the temperature had to be reduced from that normally used. Good reproduction of 0.1 micron linewidth patterns into the x-ray resist was obtained once the exposure parameters and post exposure bake were optimized. A compact exposure station using flowing helium at atmospheric pressure has also been developed for the process, alleviating the need for a vacuum chamber. The details of the overall process and the compact exposure station will be presented.

Fabrication of superconducting MgB2 nanostructures by an electron beam lithography-based technique

NASA Astrophysics Data System (ADS)

Portesi, C.; Borini, S.; Amato, G.; Monticone, E.

2006-03-01

In this work, we present the results obtained in fabrication and characterization of magnesium diboride nanowires realized by an electron beam lithography (EBL)-based method. For fabricating MgB2 thin films, an all in situ technique has been used, based on the coevaporation of B and Mg by means of an e-gun and a resistive heater, respectively. Since the high temperatures required for the fabrication of good quality MgB2 thin films do not allow the nanostructuring approach based on the lift-off technique, we structured the samples combining EBL, optical lithography, and Ar milling. In this way, reproducible nanowires 1 μm long have been obtained. To illustrate the impact of the MgB2 film processing on its superconducting properties, we measured the temperature dependence of the resistance on a nanowire and compared it to the original magnesium diboride film. The electrical properties of the films are not degraded as a consequence of the nanostructuring process, so that superconducting nanodevices may be obtained by this method.

Maskless Lithography and in situ Visualization of Conductivity of Graphene using Helium Ion Microscopy

DOE PAGES

Iberi, Vighter O.; Vlassiouk, Ivan V.; Zhang, X. -G.; ...

2015-07-07

The remarkable mechanical and electronic properties of graphene make it an ideal candidate for next generation nanoelectronics. With the recent development of commercial-level single-crystal graphene layers, the potential for manufacturing household graphene-based devices has improved, but significant challenges still remain with regards to patterning the graphene into devices. In the case of graphene supported on a substrate, traditional nanofabrication techniques such as e-beam lithography (EBL) are often used in fabricating graphene nanoribbons but the multi-step processes they require can result in contamination of the graphene with resists and solvents. In this letter, we report the utility of scanning helium ionmore » lithography for fabricating functional graphene nanoconductors that are supported directly on a silicon dioxide layer, and we measure the minimum feature size achievable due to limitations imposed by thermal fluctuations and ion scattering during the milling process. Further we demonstrate that ion beams, due to their positive charging nature, may be used to observe and test the conductivity of graphene-based nanoelectronic devices in situ.« less

Defect reduction of patterned media templates and disks

NASA Astrophysics Data System (ADS)

Luo, Kang; Ha, Steven; Fretwell, John; Ramos, Rick; Ye, Zhengmao; Schmid, Gerard; LaBrake, Dwayne; Resnick, Douglas J.; Sreenivasan, S. V.

2010-05-01

Imprint lithography has been shown to be an effective technique for the replication of nano-scale features. Acceptance of imprint lithography for manufacturing will require a demonstration of defect levels commensurate with cost-effective device production. This work summarizes the results of defect inspections of hard disks patterned using Jet and Flash Imprint Lithography (J-FILTM). Inspections were performed with optical based automated inspection tools. For the hard drive market, it is important to understand the defectivity of both the template and the imprinted disk. This work presents a methodology for automated pattern inspection and defect classification for imprint-patterned media. Candela CS20 and 6120 tools from KLA-Tencor map the optical properties of the disk surface, producing highresolution grayscale images of surface reflectivity and scattered light. Defects that have been identified in this manner are further characterized according to the morphology. The imprint process was tested after optimizing both the disk cleaning and adhesion layers processes that precede imprinting. An extended imprint run was performed and both the defect types and trends are reported.

Self-assembly and nanosphere lithography for large-area plasmonic patterns on graphene.

PubMed

Lotito, Valeria; Zambelli, Tomaso

2015-06-01

Plasmonic structures on graphene can tailor its optical properties, which is essential for sensing and optoelectronic applications, e.g. for the enhancement of photoresponsivity of graphene photodetectors. Control over their structural and, hence, spectral properties can be attained by using electron beam lithography, which is not a viable solution for the definition of patterns over large areas. For the fabrication of large-area plasmonic nanostructures, we propose to use self-assembled monolayers of nanospheres as a mask for metal evaporation and etching processes. An optimized approach based on self-assembly at air/water interface with a properly designed apparatus allows the attainment of monolayers of hexagonally closely packed patterns with high long-range order and large area coverage; special strategies are devised in order to protect graphene against damage resulting from surface treatment and further processing steps such as reactive ion etching, which could potentially impair graphene properties. Therefore we demonstrate that nanosphere lithography is a cost-effective solution to create plasmonic patterns on graphene. Copyright © 2014 Elsevier Inc. All rights reserved.

Wafer-shape metrics based foundry lithography

NASA Astrophysics Data System (ADS)

Kim, Sungtae; Liang, Frida; Mileham, Jeffrey; Tsai, Damon; Bouche, Eric; Lee, Sean; Huang, Albert; Hua, C. F.; Wei, Ming Sheng

2017-03-01

As device shrink, there are many difficulties with process integration and device yield. Lithography process control is expected to be a major challenge due to tighter overlay and focus control requirement. The understanding and control of stresses accumulated during device fabrication has becoming more critical at advanced technology nodes. Within-wafer stress variations cause local wafer distortions which in turn present challenges for managing overlay and depth of focus during lithography. A novel technique for measuring distortion is Coherent Gradient Sensing (CGS) interferometry, which is capable of generating a high-density distortion data set of the full wafer within a time frame suitable for a high volume manufacturing (HVM) environment. In this paper, we describe the adoption of CGS (Coherent Gradient Sensing) interferometry into high volume foundry manufacturing to overcome these challenges. Leveraging this high density 3D metrology, we characterized its In-plane distortion as well as its topography capabilities applied to the full flow of an advanced foundry manufacturing. Case studies are presented that summarize the use of CGS data to reveal correlations between in-plane distortion and overlay variation as well as between topography and device yield.

Imprint lithography template technology for bit patterned media (BPM)

NASA Astrophysics Data System (ADS)

Lille, J.; Patel, K.; Ruiz, R.; Wu, T.-W.; Gao, H.; Wan, Lei; Zeltzer, G.; Dobisz, E.; Albrecht, T. R.

2011-11-01

Bit patterned media (BPM) for magnetic recording has emerged as a promising technology to deliver thermally stable magnetic storage at densities beyond 1Tb/in2. Insertion of BPM into hard disk drives will require the introduction of nanoimprint lithography and other nanofabrication processes for the first time. In this work, we focus on nanoimprint and nanofabrication challenges that are being overcome in order to produce patterned media. Patterned media has created the need for new tools and processes, such as an advanced rotary e-beam lithography tool and block copolymer integration. The integration of block copolymer is through the use of a chemical contrast pattern on the substrate which guides the alignment of di-block copolymers. Most of the work on directed self assembly for patterned media applications has, until recently, concentrated on the formation of circular dot patterns in a hexagonal close packed lattice. However, interactions between the read head and media favor a bit aspect ratio (BAR) greater than one. This design constraint has motivated new approaches for using self-assembly to create suitable high-BAR master patterns and has implications for template fabrication.

All-Printed, Self-Aligned Carbon Nanotube Thin-Film Transistors on Imprinted Plastic Substrates.

PubMed

Song, Donghoon; Zare Bidoky, Fazel; Hyun, Woo Jin; Walker, S Brett; Lewis, Jennifer A; Frisbie, C Daniel

2018-05-09

We present a self-aligned process for printing thin-film transistors (TFTs) on plastic with single-walled carbon nanotube (SWCNT) networks as the channel material. The SCALE (self-aligned capillarity-assisted lithography for electronics) process combines imprint lithography with inkjet printing. Specifically, inks are jetted into imprinted reservoirs, where they then flow into narrow device cavities due to capillarity. Here, we incorporate a composite high- k gate dielectric and an aligned conducting polymer gate electrode in the SCALE process to enable a smaller areal footprint than prior designs that yields low-voltage SWCNT TFTs with average p-type carrier mobilities of 4 cm 2 /V·s and ON/OFF current ratios of 10 4 . Our work demonstrates the promising potential of the SCALE process to fabricate SWCNT-based TFTs with favorable I- V characteristics on plastic substrates.

Micro and Nano Systems for Space Exploration

NASA Technical Reports Server (NTRS)

Manohara, Harish

2007-01-01

This slide presentation reviews the use of micro and nano systems in Space exploration. Included are: an explanation of the rationales behind nano and micro technologies for space exploration, a review of how the devices are fabricated, including details on lithography with more information on Electron Beam (E-Beam) lithography, and X-ray lithography, a review of micro gyroscopes and inchworm Microactuator as examples of the use of MicroElectoMechanical (MEMS) technology. Also included is information on Carbon Nanotubes, including a review of the CVD growth process. These micro-nano systems have given rise to the next generation of miniature X-ray Diffraction, X-ray Fluorescence instruments, mass spectrometers, and terahertz frequency vacuum tube oscillators and amplifiers, scanning electron microscopes and energy dispersive x-ray spectroscope. The nanotechnology has also given rise to coating technology, such as silicon nanotip anti-reflection coating.

Miniature low voltage beam systems producable by combined lithographies

NASA Astrophysics Data System (ADS)

Koops, Hans W. P.; Munro, Eric; Rouse, John; Kretz, Johannes; Rudolph, Michael; Weber, Markus; Dahm, Gerold

The project of a miniaturized vacuum microelectronic 100 GHz switch is described. It implies the development of a field emission electron gun as well as the investigation of miniaturized lenses and deflectors. Electrostatic elements are designed and developed for this application. Connector pads and wiring pattern are created by conventional electron beam lithography and a lift-off or etching process. Wire and other 3-dimensional structures are grown using electron beam induced deposition. This additive lithography allows to form electrodes and resistors of a preset conductivity. The scanning electron microscope features positioning the structures with nm precision. An unconventional lithography system is used that is capable of controlling the pixel dwell time within a shape with different time functions. With this special function 3-dimensional structures can be generated like free standing square shaped electrodes. The switch is built by computer controlled additive lithography avoiding assembly from parts. Lenses of micrometer dimensions were investigated with numerical electron optics programs computing the 3-dimensional potential and field distribution. From the extracted axial field distribution the electron optic characteristic parameters, like focal length, chromatic and spherical aberration, were calculated for various lens excitations. The analysis reveals that miniaturized optics for low energy electrons, as low as 30 eV, are diffraction limited. For a lens with 2 μm focal length, a chromatic aberration disc of 1 nm contributes to 12 nm diffraction disc. The spherical aberration blurs the probe by 0.02 nm, assuming an aperture of 0.01 rad. Employing hydrogen ions at 100 V, a probe diameter of 0.3 nm generated by chromatic aberration is possible. Miniaturized electron optical probe forming systems and imaging systems can be constructed with those lenses. Its application as lithography systems with massive parallel beams can be forseen.

Manufacturability study of masks created by inverse lithography technology (ILT)

NASA Astrophysics Data System (ADS)

Martin, Patrick M.; Progler, C. J.; Xiao, G.; Gray, R.; Pang, L.; Liu, Y.

2005-11-01

As photolithography is pushed to fabricate deep-sub wavelength devices for 90nm, 65nm and smaller technology nodes using available exposure tools (i.e., 248nm, 193nm steppers), photomask capability is becoming extremely critical. For example, PSM masks require more complicated processing; aggressive OPC makes the writing time longer and sometimes unpredictable; and, high MEEF imposes much more stringent demands on mask quality. Therefore, in order for any new lithography technology to be adopted into production, mask manufacturability must be studied thoroughly and carefully. In this paper we will present the mask manufacturability study on mask patterns created using Inverse Lithography Technology (ILT). Unlike conventional OPC methodologies, ILT uses a unique outcome-based technology to mathematically determine the mask features that produce the desired on-wafer results. ILT solves the most critical litho challenges of the deep sub-wavelength era. Potential benefits include: higher yield; expanded litho process windows; superb pattern fidelity at 90, 65 & 45-nm nodes; and reduced time-to-silicon - all without changing the existing lithography infrastructure and design-to-silicon flow. In this study a number of cell structures were selected and used as test patterns. "Luminized patterns" were generated for binary mask and attenuated phase-shift mask. Both conventional OPC patterns and "luminized patterns" were put on a test reticle side by side, and they all have a number of variations in term of correction aggressivity level and mask complexity. Mask manufacturability, including data fracturing, writing time, mask inspection, and metrology were studied. The results demonstrate that, by optimizing the inspection recipe, masks created using ILT technology can be made and qualified using current processes with a reasonable turn-around time.

Molecular dynamics modeling framework for overcoming nanoshape retention limits of imprint lithography

NASA Astrophysics Data System (ADS)

Cherala, Anshuman; Sreenivasan, S. V.

2018-12-01

Complex nanoshaped structures (nanoshape structures here are defined as shapes enabled by sharp corners with radius of curvature <5 nm) have been shown to enable emerging nanoscale applications in energy, electronics, optics, and medicine. This nanoshaped fabrication at high throughput is well beyond the capabilities of advanced optical lithography. While the highest-resolution e-beam processes (Gaussian beam tools with non-chemically amplified resists) can achieve <5 nm resolution, this is only available at very low throughputs. Large-area e-beam processes, needed for photomasks and imprint templates, are limited to 18 nm half-pitch lines and spaces and 20 nm half-pitch hole patterns. Using nanoimprint lithography, we have previously demonstrated the ability to fabricate precise diamond-like nanoshapes with 3 nm radius corners over large areas. An exemplary shaped silicon nanowire ultracapacitor device was fabricated with these nanoshaped structures, wherein the half-pitch was 100 nm. The device significantly exceeded standard nanowire capacitor performance (by 90%) due to relative increase in surface area per unit projected area, enabled by the nanoshape. Going beyond the previous work, in this paper we explore the scaling of these nanoshaped structures to 10 nm half-pitch and below. At these scales a new "shape retention" resolution limit is observed due to polymer relaxation in imprint resists, which cannot be predicted with a linear elastic continuum model. An all-atom molecular dynamics model of the nanoshape structure was developed here to study this shape retention phenomenon and accurately predict the polymer relaxation. The atomistic framework is an essential modeling and design tool to extend the capability of imprint lithography to sub-10 nm nanoshapes. This framework has been used here to propose process refinements that maximize shape retention, and design template assist features (design for nanoshape retention) to achieve targeted nanoshapes.

Fabrication of 0.25-um electrode width SAW filters using x-ray lithography with a laser plasma source

NASA Astrophysics Data System (ADS)

Bobkowski, Romuald; Li, Yunlei; Fedosejevs, Robert; Broughton, James N.

1996-05-01

A process for the fabrication of surface acoustic wave (SAW) devices with line widths of 250 nm and less, based on x-ray lithography using a laser-plasma source has been developed. The x-ray lithography process is based on keV x-ray emission from Cu plasma produced by 15 Hz, 50 ps, 248 nm KrF excimer laser pulses. The full structure of a 2 GHz surface acoustic wave filter with interdigital transducers in a split-electrode geometry has been manufactured. The devices require patterning a 150 nm thick aluminum layer on a LiNbO3 substrate with electrodes 250 nm wide. The manufacturing process has two main steps: x-ray mask fabrication employing e-beam lithography and x-ray lithography to obtain the final device. The x-ray masks are fabricated on 1 micrometers thick membranes of Si2N4. The line patterns on the masks are written into PMMA resist using a scanning electron microscope which has been interfaced to a personal computer equipped to control the x and y scan voltages. The opaque regions of the x-ray mask are then formed by electroplating fine grain gold into the open spaces in the etched PMMA. The mask and sample are mounted in an exposure cassette with a fixed spacer of 10 micrometers separating them. The sample consists of a LiNbO3 substrate coated with Shipley XP90104C x-ray resist which has been previously characterized. The x-ray patterning is carried out in an exposure chamber with flowing helium background gas in order to minimize debris deposition on the filters. After etching the x-ray resist, the final patterns are produced using metallization and a standard lift-off technique. The SAW filters are then bonded and packaged onto impedance matching striplines. The resultant devices are tested using Scalar Network Analyzers. The final devices produced had a center frequency of 1.93 GHz with a bandwidth of 98 MHz, close to the expected performance of our simple design.

Complete data preparation flow for Massively Parallel E-Beam lithography on 28nm node full-field design

NASA Astrophysics Data System (ADS)

Fay, Aurélien; Browning, Clyde; Brandt, Pieter; Chartoire, Jacky; Bérard-Bergery, Sébastien; Hazart, Jérôme; Chagoya, Alexandre; Postnikov, Sergei; Saib, Mohamed; Lattard, Ludovic; Schavione, Patrick

2016-03-01

Massively parallel mask-less electron beam lithography (MP-EBL) offers a large intrinsic flexibility at a low cost of ownership in comparison to conventional optical lithography tools. This attractive direct-write technique needs a dedicated data preparation flow to correct both electronic and resist processes. Moreover, Data Prep has to be completed in a short enough time to preserve the flexibility advantage of MP-EBL. While the MP-EBL tools have currently entered an advanced stage of development, this paper will focus on the data preparation side of the work for specifically the MAPPER Lithography FLX-1200 tool [1]-[4], using the ASELTA Nanographics Inscale software. The complete flow as well as the methodology used to achieve a full-field layout data preparation, within an acceptable cycle time, will be presented. Layout used for Data Prep evaluation was one of a 28 nm technology node Metal1 chip with a field size of 26x33mm2, compatible with typical stepper/scanner field sizes and wafer stepping plans. Proximity Effect Correction (PEC) was applied to the entire field, which was then exported as a single file to MAPPER Lithography's machine format, containing fractured shapes and dose assignments. The Soft Edge beam to beam stitching method was employed in the specific overlap regions defined by the machine format as well. In addition to PEC, verification of the correction was included as part of the overall data preparation cycle time. This verification step was executed on the machine file format to ensure pattern fidelity and accuracy as late in the flow as possible. Verification over the full chip, involving billions of evaluation points, is performed both at nominal conditions and at Process Window corners in order to ensure proper exposure and process latitude. The complete MP-EBL data preparation flow was demonstrated for a 28 nm node Metal1 layout in 37 hours. The final verification step shows that the Edge Placement Error (EPE) is kept below 2.25 nm over an exposure dose variation of 8%.

Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns

PubMed Central

2011-01-01

Precise and reproducible surface nanopatterning is the key for a successful ordered growth of GaN nanocolumns. In this work, we point out the main technological issues related to the patterning process, mainly surface roughness and cleaning, and mask adhesion to the substrate. We found that each of these factors, process-related, has a dramatic impact on the subsequent selective growth of the columns inside the patterned holes. We compare the performance of e-beam lithography, colloidal lithography, and focused ion beam in the fabrication of hole-patterned masks for ordered columnar growth. These results are applicable to the ordered growth of nanocolumns of different materials. PMID:22168918

Designed tools for analysis of lithography patterns and nanostructures

NASA Astrophysics Data System (ADS)

Dervillé, Alexandre; Baderot, Julien; Bernard, Guilhem; Foucher, Johann; Grönqvist, Hanna; Labrosse, Aurélien; Martinez, Sergio; Zimmermann, Yann

2017-03-01

We introduce a set of designed tools for the analysis of lithography patterns and nano structures. The classical metrological analysis of these objects has the drawbacks of being time consuming, requiring manual tuning and lacking robustness and user friendliness. With the goal of improving the current situation, we propose new image processing tools at different levels: semi automatic, automatic and machine-learning enhanced tools. The complete set of tools has been integrated into a software platform designed to transform the lab into a virtual fab. The underlying idea is to master nano processes at the research and development level by accelerating the access to knowledge and hence speed up the implementation in product lines.

Molecular Switch for Sub-Diffraction Laser Lithography by Photoenol Intermediate-State Cis-Trans Isomerization.

PubMed

Mueller, Patrick; Zieger, Markus M; Richter, Benjamin; Quick, Alexander S; Fischer, Joachim; Mueller, Jonathan B; Zhou, Lu; Nienhaus, Gerd Ulrich; Bastmeyer, Martin; Barner-Kowollik, Christopher; Wegener, Martin

2017-06-27

Recent developments in stimulated-emission depletion (STED) microscopy have led to a step change in the achievable resolution and allowed breaking the diffraction limit by large factors. The core principle is based on a reversible molecular switch, allowing for light-triggered activation and deactivation in combination with a laser focus that incorporates a point or line of zero intensity. In the past years, the concept has been transferred from microscopy to maskless laser lithography, namely direct laser writing (DLW), in order to overcome the diffraction limit for optical lithography. Herein, we propose and experimentally introduce a system that realizes such a molecular switch for lithography. Specifically, the population of intermediate-state photoenol isomers of α-methyl benzaldehydes generated by two-photon absorption at 700 nm fundamental wavelength can be reversibly depleted by simultaneous irradiation at 440 nm, suppressing the subsequent Diels-Alder cycloaddition reaction which constitutes the chemical core of the writing process. We demonstrate the potential of the proposed mechanism for STED-inspired DLW by covalently functionalizing the surface of glass substrates via the photoenol-driven STED-inspired process exploiting reversible photoenol activation with a polymerization initiator. Subsequently, macromolecules are grown from the functionalized areas and the spatially coded glass slides are characterized by atomic-force microscopy. Our approach allows lines with a full-width-at-half-maximum of down to 60 nm and line gratings with a lateral resolution of 100 nm to be written, both surpassing the diffraction limit.

Extreme-ultraviolet and electron beam lithography processing using water developable resist material

NASA Astrophysics Data System (ADS)

Takei, Satoshi

2017-08-01

In order to achieve the use of pure water in the developable process of extreme-ultraviolet and electron beam lithography, instead of conventionally used tetramethylammonium hydroxide and organic solvents, a water developable resist material was designed and developed. The water-developable resist material was derived from woody biomass with beta-linked disaccharide unit for environmental affair, safety, easiness of handling, and health of the working people. 80 nm dense line patterning images with exposure dose of 22 μC/cm2 and CF4 etching selectivity of 1.8 with hardmask layer were provided by specific process conditions. The approach of our water-developable resist material will be one of the most promising technologies ready to be investigated into production of medical device applications.

Quartz 9-inch size mask blanks for ArF PSM (Phase Shift Mask)

NASA Astrophysics Data System (ADS)

Harashima, Noriyuki; Isozaki, Tatsuya; Kawanishi, Arata; Kanai, Shuichiro; Kageyama, Kagehiro; Iso, Hiroyuki; Chishima, Tatsuya

2017-07-01

Semiconductor technology nodes are steadily miniaturizing. On the other hand, various efforts have been made to reduce costs, mass production lines have shifted from 200 mmφ of Si wafer to 300 mmφ, and technology development of Si wafer 450 mmφ is also in progress. As a photomask, 6-inch size binary Cr mask has been used for many years, but in recent years, the use of 9-inch binary Cr masks for Proximity Lithography Process in automotive applications, MEMS, packages, etc. has increased, and cost reduction has been taken. Since the miniaturization will progress in the above applications in the future, products corresponding to miniaturization are also desired in 9-inch photomasks. The high grade Cr - binary mask blanks used in proximity exposure process, there is a prospect of being able to use it by ULVAC COATING CORPORATION's tireless research. As further demands for miniaturization, KrF and ArF Lithography Process, which are used for steppers and scanners , there are also a demand for 9-inch size Mask Blanks. In ULVAC COATING CORPORATION, we developed a 9 - inch size KrF PSM mask Blanks prototype in 2016 and proposed a new high grade 9 - inch photomask. This time, we have further investigated and developed 9-inch size ArF PSM Mask Blanks corresponding to ArF Lithography Process, so we report it.

Electron-beam lithography with character projection technique for high-throughput exposure with line-edge quality control

NASA Astrophysics Data System (ADS)

Ikeno, Rimon; Maruyama, Satoshi; Mita, Yoshio; Ikeda, Makoto; Asada, Kunihiro

2016-07-01

The high throughput of character projection (CP) electron-beam (EB) lithography makes it a promising technique for low-to-medium volume device fabrication with regularly arranged layouts, such as for standard-cell logics and memory arrays. However, non-VLSI applications such as MEMS and MOEMS may not be able to fully utilize the benefits of the CP method due to the wide variety of layout figures including curved and oblique edges. In addition, the stepwise shapes that appear because of the EB exposure process often result in intolerable edge roughness, which degrades device performances. In this study, we propose a general EB lithography methodology for such applications utilizing a combination of the CP and variable-shaped beam methods. In the process of layout data conversion with CP character instantiation, several control parameters were optimized to minimize the shot count, improve the edge quality, and enhance the overall device performance. We have demonstrated EB shot reduction and edge-quality improvement with our methodology by using a leading-edge EB exposure tool, ADVANTEST F7000S-VD02, and a high-resolution hydrogen silsesquioxane resist. Atomic force microscope observations were used to analyze the resist edge profiles' quality to determine the influence of the control parameters used in the data conversion process.

Development of template and mask replication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Brooks, Cynthia; Selinidis, Kosta; Doyle, Gary; Brown, Laura; LaBrake, Dwayne; Resnick, Douglas J.; Sreenivasan, S. V.

2010-09-01

The Jet and Flash Imprint Lithography (J-FILTM)1-7 process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105 imprints. This suggests that tens of thousands of templates/masks will be required. It is not feasible to employ electronbeam patterning directly to deliver these volumes. Instead, a "master" template - created by directly patterning with an electron-beam tool - will be replicated many times with an imprint lithography tool to produce the required supply of "working" templates/masks. In this paper, we review the development of the pattern transfer process for both template and mask replicas. Pattern transfer of resolutions down to 25nm has been demonstrated for bit patterned media replication. In addition, final resolution on a semiconductor mask of 28nm has been confirmed. The early results on both etch depth and CD uniformity are promising, but more extensive work is required to characterize the pattern transfer process.

Imprint lithography: lab curiosity or the real NGL

NASA Astrophysics Data System (ADS)

Resnick, Douglas J.; Dauksher, William J.; Mancini, David P.; Nordquist, Kevin J.; Bailey, Todd C.; Johnson, Stephen C.; Stacey, Nicholas A.; Ekerdt, John G.; Willson, C. Grant; Sreenivasan, S. V.; Schumaker, Norman E.

2003-06-01

The escalating cost for Next Generation Lithography (NGL) tools is driven in part by the need for complex sources and optics. The cost for a single NGL tool could exceed $50M in the next few years, a prohibitive number for many companies. As a result, several researchers are looking at low cost alternative methods for printing sub-100 nm features. In the mid-1990s, several resarech groups started investigating different methods for imprinting small features. Many of these methods, although very effective at printing small features across an entire wafer, are limited in their ability to do precise overlay. In 1999, Willson and Sreenivasan discovered that imprinting could be done at low pressures and at room temperatures by using low viscosity UV curable monomers. The technology is typically referred to as Step and Flash Imprint Lithography. The use of a quartz template enabled the photocuring process to occur and also opened up the potential for optical alignment of teh wafer and template. This paper traces the development of nanoimprint lithography and addresses the issues that must be solved if this type of technology is to be applied to high-density silicon integrated circuitry.

Triple/quadruple patterning layout decomposition via novel linear programming and iterative rounding

NASA Astrophysics Data System (ADS)

Lin, Yibo; Xu, Xiaoqing; Yu, Bei; Baldick, Ross; Pan, David Z.

2016-03-01

As feature size of the semiconductor technology scales down to 10nm and beyond, multiple patterning lithography (MPL) has become one of the most practical candidates for lithography, along with other emerging technologies such as extreme ultraviolet lithography (EUVL), e-beam lithography (EBL) and directed self assembly (DSA). Due to the delay of EUVL and EBL, triple and even quadruple patterning are considered to be used for lower metal and contact layers with tight pitches. In the process of MPL, layout decomposition is the key design stage, where a layout is split into various parts and each part is manufactured through a separate mask. For metal layers, stitching may be allowed to resolve conflicts, while it is forbidden for contact and via layers. In this paper, we focus on the application of layout decomposition where stitching is not allowed such as for contact and via layers. We propose a linear programming and iterative rounding (LPIR) solving technique to reduce the number of non-integers in the LP relaxation problem. Experimental results show that the proposed algorithms can provide high quality decomposition solutions efficiently while introducing as few conflicts as possible.

Experimental, theoretical, and device application development of nanoscale focused electron-beam-induced deposition

NASA Astrophysics Data System (ADS)

Randolph, Steven Jeffrey

Electron-beam-induced deposition (EBID) is a highly versatile nanofabrication technique that allows for growth of a variety of materials with nanoscale precision and resolution. While several applications and studies of EBID have been reported and published, there is still a significant lack of understanding of the complex mechanisms involved in the process. Consequently, EBID process control is, in general, limited and certain common experimental results regarding nanofiber growth have yet to be fully explained. Such anomalous results have been addressed in this work both experimentally and by computer simulation. Specifically, a correlation between SiOx nanofiber deposition observations and the phenomenon of electron beam heating (EBH) was shown by comparison of thermal computer models and experimental results. Depending on the beam energy, beam current, and nanostructure geometry, the heat generated can be substantial and may influence the deposition rate. Temperature dependent EBID growth experiments qualitatively verified the results of the EBH model. Additionally, EBID was used to produce surface image layers for maskless, direct-write lithography (MDL). A single layer process used directly written SiOx features as a masking layer for amorphous silicon thin films. A bilayer process implemented a secondary masking layer consisting of standard photoresist into which a pattern---directly written by EBID tungsten---was transferred. The single layer process was found to be extremely sensitive to the etch selectivity of the plasma etch. In the bilayer process, EBID tungsten was written onto photoresist and the pattern transferred by means of oxygen plasma dry development following a brief refractory descum. Conditions were developed to reduce the spatial spread of electrons in the photoresist layer and obtain ˜ 35 nm lines. Finally, an EBID-based technique for field emitter repair was applied to the Digital Electrostatically focused e-beam Array Lithography (DEAL) parallel electron beam lithography configuration to repair damaged or missing carbon nanofiber cathodes. The I-V response and lithography results from EBID tungsten-based devices were comparable to CNF-based DEAL devices indicating a successful repair technique.

Integrated approach to improving local CD uniformity in EUV patterning

NASA Astrophysics Data System (ADS)

Liang, Andrew; Hermans, Jan; Tran, Timothy; Viatkina, Katja; Liang, Chen-Wei; Ward, Brandon; Chuang, Steven; Yu, Jengyi; Harm, Greg; Vandereyken, Jelle; Rio, David; Kubis, Michael; Tan, Samantha; Dusa, Mircea; Singhal, Akhil; van Schravendijk, Bart; Dixit, Girish; Shamma, Nader

2017-03-01

Extreme ultraviolet (EUV) lithography is crucial to enabling technology scaling in pitch and critical dimension (CD). Currently, one of the key challenges of introducing EUV lithography to high volume manufacturing (HVM) is throughput, which requires high source power and high sensitivity chemically amplified photoresists. Important limiters of high sensitivity chemically amplified resists (CAR) are the effects of photon shot noise and resist blur on the number of photons received and of photoacids generated per feature, especially at the pitches required for 7 nm and 5 nm advanced technology nodes. These stochastic effects are reflected in via structures as hole-to-hole CD variation or local CD uniformity (LCDU). Here, we demonstrate a synergy of film stack deposition, EUV lithography, and plasma etch techniques to improve LCDU, which allows the use of high sensitivity resists required for the introduction of EUV HVM. Thus, to improve LCDU to a level required by 5 nm node and beyond, film stack deposition, EUV lithography, and plasma etch processes were combined and co-optimized to enhance LCDU reduction from synergies. Test wafers were created by depositing a pattern transfer stack on a substrate representative of a 5 nm node target layer. The pattern transfer stack consisted of an atomically smooth adhesion layer and two hardmasks and was deposited using the Lam VECTOR PECVD product family. These layers were designed to mitigate hole roughness, absorb out-of-band radiation, and provide additional outlets for etch to improve LCDU and control hole CD. These wafers were then exposed through an ASML NXE3350B EUV scanner using a variety of advanced positive tone EUV CAR. They were finally etched to the target substrate using Lam Flex dielectric etch and Kiyo conductor etch systems. Metrology methodologies to assess dimensional metrics as well as chip performance and defectivity were investigated to enable repeatable patterning process development. Illumination conditions in EUV lithography were optimized to improve normalized image log slope (NILS), which is expected to reduce shot noise related effects. It can be seen that the EUV imaging contrast improvement can further reduce post-develop LCDU from 4.1 nm to 3.9 nm and from 2.8 nm to 2.6 nm. In parallel, etch processes were developed to further reduce LCDU, to control CD, and to transfer these improvements into the final target substrate. We also demonstrate that increasing post-develop CD through dose adjustment can enhance the LCDU reduction from etch. Similar trends were also observed in different pitches down to 40 nm. The solutions demonstrated here are critical to the introduction of EUV lithography in high volume manufacturing. It can be seen that through a synergistic deposition, lithography, and etch optimization, LCDU at a 40 nm pitch can be improved to 1.6 nm (3-sigma) in a target oxide layer and to 1.4 nm (3-sigma) at the photoresist layer.

Electron Beam Lithography Double Step Exposure Technique for Fabrication of Mushroom-Like Profile in Bilayer Resist System

NASA Astrophysics Data System (ADS)

Kornelia, Indykiewicz; Bogdan, Paszkiewicz; Tomasz, Szymański; Regina, Paszkiewicz

2015-01-01

The Hi/Lo bilayer resist system exposure in e-beam lithography (EBL) process, intended for mushroom-like profile fabrication, was studied. Different exposure parameters and theirs influence on the resist layers were simulated in CASINO software and the obtained results were compared with the experimental data. The AFM technique was used for the estimation of the e-beam penetration depth in the resist stack. Performed numerical and experimental results allow us to establish the useful ranges of the exposure parameters.

Nanostructures Enabled by On-Wire Lithography (OWL)

PubMed Central

Braunschweig, Adam B.; Schmucker, Abrin L.; Wei, Wei David; Mirkin, Chad A.

2010-01-01

Nanostructures fabricated by a novel technique, termed On-Wire-Lithography (OWL), can be combined with organic and biological molecules to create systems with emergent and highly functional properties. OWL is a template-based, electrochemical process for forming gapped cylindrical structures on a solid support, with feature sizes (both gap and segment length) that can be controlled on the sub-100 nm length scale. Structures prepared by this method have provided valuable insight into the plasmonic properties of noble metal nanomaterials and have formed the basis for novel molecular electronic, encoding, and biological detection devices. PMID:20396668

Coherent diffractive imaging methods for semiconductor manufacturing

NASA Astrophysics Data System (ADS)

Helfenstein, Patrick; Mochi, Iacopo; Rajeev, Rajendran; Fernandez, Sara; Ekinci, Yasin

2017-12-01

The paradigm shift of the semiconductor industry moving from deep ultraviolet to extreme ultraviolet lithography (EUVL) brought about new challenges in the fabrication of illumination and projection optics, which constitute one of the core sources of cost of ownership for many of the metrology tools needed in the lithography process. For this reason, lensless imaging techniques based on coherent diffractive imaging started to raise interest in the EUVL community. This paper presents an overview of currently on-going research endeavors that use a number of methods based on lensless imaging with coherent light.

Modulated grayscale UV pattern for uniform photopolymerization based on a digital micromirror device system

NASA Astrophysics Data System (ADS)

Yoon, Jinsik; Kim, Kibeom; Park, Wook

2017-07-01

We present an essential method for generating microparticles uniformly in a single ultraviolet (UV) light exposure area for optofluidic maskless lithography. In the optofluidic maskless lithography process, the productivity of monodisperse microparticles depends on the size of the UV exposure area. An effective fabrication area is determined by the size of the UV intensity profile map, satisfying the required uniformity of UV intensity. To increase the productivity of monodisperse microparticles in optofluidic maskless lithography, we expanded the effective UV exposure area by modulating the intensity of the desired UV light pattern based on the premeasured UV intensity profile map. We verified the improvement of the uniformity of the microparticles generated by the proposed modulation technique, providing histogram analyses of the conjugated fluorescent intensities and the sizes of the microparticles. Additionally, we demonstrated the generation of DNA uniformly encapsulated in microparticles.

Latest results on solarization of optical glasses with pulsed laser radiation

NASA Astrophysics Data System (ADS)

Jedamzik, Ralf; Petzold, Uwe

2017-02-01

Femtosecond lasers are more and more used for material processing and lithography. Femtosecond laser help to generate three dimensional structures in photoresists without using masks in micro lithography. This technology is of growing importance for the field of backend lithography or advanced packaging. Optical glasses used for beam shaping and inspection tools need to withstand high laser pulse energies. Femtosecond laser radiation in the near UV wavelength range generates solarization effects in optical glasses. In this paper results are shown of femtosecond laser solarization experiments on a broad range of optical glasses from SCHOTT. The measurements have been performed by the Laser Zentrum Hannover in Germany. The results and their impact are discussed in comparison to traditional HOK-4 and UVA-B solarization measurements of the same materials. The target is to provide material selection guidance to the optical designer of beam shaping lens systems.

Advanced coatings for next generation lithography

NASA Astrophysics Data System (ADS)

Naujok, P.; Yulin, S.; Kaiser, N.; Tünnermann, A.

2015-03-01

Beyond EUV lithography at 6.X nm wavelength has a potential to extend EUVL beyond the 11 nm node. To implement B-based mirrors and to enable their industrial application in lithography tools, a reflectivity level of > 70% has to be reached in near future. The authors will prove that transition from conventional La/B4C to promising LaN/B4C multilayer coatings leads to enhanced optical properties. Currently a near normal-incidence reflectivity of 58.1% @ 6.65 nm is achieved by LaN/B4C multilayer mirrors. The introduction of ultrathin diffusion barriers into the multilayer design to reach the targeted reflectivity of 70% was also tested. The optimization of multilayer design and deposition process for interface-engineered La/C/B4C multilayer mirrors resulted in peak reflectivity of 56.8% at the wavelength of 6.66 nm. In addition, the thermal stability of several selected multilayers was investigated and will be discussed.

Single-expose patterning development for EUV lithography

NASA Astrophysics Data System (ADS)

De Silva, Anuja; Petrillo, Karen; Meli, Luciana; Shearer, Jeffrey C.; Beique, Genevieve; Sun, Lei; Seshadri, Indira; Oh, Taehwan; Han, Seulgi; Saulnier, Nicole; Lee, Joe; Arnold, John C.; Hamieh, Bassem; Felix, Nelson M.; Furukawa, Tsuyoshi; Singh, Lovejeet; Ayothi, Ramakrishnan

2017-03-01

Initial readiness of EUV (extreme ultraviolet) patterning was demonstrated in 2016 with IBM Alliance's 7nm device technology. The focus has now shifted to driving the 'effective' k1 factor and enabling the second generation of EUV patterning. With the substantial cost of EUV exposure there is significant interest in extending the capability to do single exposure patterning with EUV. To enable this, emphasis must be placed on the aspect ratios, adhesion, defectivity reduction, etch selectivity, and imaging control of the whole patterning process. Innovations in resist materials and processes must be included to realize the full entitlement of EUV lithography at 0.33NA. In addition, enhancements in the patterning process to enable good defectivity, lithographic process window, and post etch pattern fidelity are also required. Through this work, the fundamental material challenges in driving down the effective k1 factor will be highlighted.

Anticipating and controlling mask costs within EDA physical design

NASA Astrophysics Data System (ADS)

Rieger, Michael L.; Mayhew, Jeffrey P.; Melvin, Lawrence S.; Lugg, Robert M.; Beale, Daniel F.

2003-08-01

For low k1 lithography, more aggressive OPC is being applied to critical layers, and the number of mask layers with OPC treatments is growing rapidly. The 130 nm, process node required, on average, 8 layers containing rules- or model-based OPC. The 90 nm node will have 16 OPC layers, of which 14 layers contain aggressive model-based OPC. This escalation of mask pattern complexity, coupled with the predominant use of vector-scan e-beam (VSB) mask writers contributes to the rising costs of advanced mask sets. Writing times for OPC layouts are several times longer than for traditional layouts, making mask exposure the single largest cost component for OPC masks. Lower mask yields, another key factor in higher mask costs, is also aggravated by OPC. Historical mask set costs are plotted below. The initial cost of a 90 nm-node mask set will exceed one million dollars. The relative impact of mask cost on chip depends on how many total wafers are printed with each mask set. For many foundry chips, where unit production is often well below 1000 wafers, mask costs are larger than wafer processing costs. Further increases in NRE may begin to discourage these suppliers' adoption to 90 nm and smaller nodes. In this paper we will outline several alternatives for reducing mask costs by strategically leveraging dimensional margins. Dimensional specifications for a particular masking layer usually are applied uniformly to all features on that layer. As a practical matter, accuracy requirements on different features in the design may vary widely. Take a polysilicon layer, for example: global tolerance specifications for that layer are driven by the transistor-gate requirements; but these parameters over-specify interconnect feature requirements. By identifying features where dimensional accuracy requirements can be reduced, additional margin can be leveraged to reduce OPC complexity. Mask writing time on VSB tools will drop in nearly direct proportion to reduce shot count. By inspecting masks with reference to feature-dependent margins, instead of uniform specifications, mask yield can be effectively increased further reducing delivered mask expense.

Planar techniques for fabricating X-ray diffraction gratings and zone plates

NASA Technical Reports Server (NTRS)

Smith, H. I.; Anderson, E. H.; Hawryluk, A. M.; Schattenburg, M. L.

1984-01-01

The state of current planar techniques in the fabrication of Fresnel zone plates and diffraction gratings is reviewed. Among the fabrication techniques described are multilayer resist techniques; scanning electron beam lithography; and holographic lithography. Consideration is also given to: X-ray lithography; ion beam lithography; and electroplating. SEM photographs of the undercut profiles obtained in a type AZ 135OB photoresistor by holographic lithography are provided.

First 65nm tape-out using inverse lithography technology (ILT)

NASA Astrophysics Data System (ADS)

Hung, Chi-Yuan; Zhang, Bin; Tang, Deming; Guo, Eric; Pang, Linyong; Liu, Yong; Moore, Andrew; Wang, Kechang

2005-11-01

This paper presents SMIC's first 65nm tape out results, in particularly, using ILT. ILT mathematically determines the mask features that produce the desired on-wafer results with best wafer pattern fidelity, largest process window or both. SMIC applied it to its first 65nm tape-out to study ILT performance and benefits for deep sub-wavelength lithography. SMIC selected 3 SRAM designs as the first test case, because SRAM bit-cells contain features which are challenging lithographically. Mask patterns generated from both conventional OPC and ILT were placed on the mask side-by-side. Mask manufacturability (including fracturing, writing time, inspection, and metrology) and wafer print performance of ILT were studied. The results demonstrated that ILT achieved better CD accuracy, produced substantially larger process window than conventional OPC, and met SMIC's 65nm process window requirements.

Fabrication of tunable diffraction grating by imprint lithography with photoresist mold

NASA Astrophysics Data System (ADS)

Yamada, Itsunari; Ikeda, Yusuke; Higuchi, Tetsuya

2018-05-01

We fabricated a deformable transmission silicone [poly(dimethylsiloxane)] grating using a two-beam interference method and imprint lithography and evaluated its optical characteristics during a compression process. The grating pattern with 0.43 μm depth and 1.0 μm pitch was created on a silicone surface by an imprinting process with a photoresist mold to realize a simple, low-cost fabrication process. The first-order diffraction transmittance of this grating reached 10.3% at 632.8 nm wavelength. We also measured the relationship between the grating period and compressive stress to the fabricated elements. The grating period changed from 1.0 μm to 0.84 μm by 16.6% compression of the fabricated element in one direction, perpendicular to the grooves, and the first-order diffraction transmittance was 8.6%.

High-density patterned media fabrication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Ye, Zhengmao; Ramos, Rick; Brooks, Cynthia; Simpson, Logan; Fretwell, John; Carden, Scott; Hellebrekers, Paul; LaBrake, Dwayne; Resnick, Douglas J.; Sreenivasan, S. V.

2011-04-01

The Jet and Flash Imprint Lithography (J-FIL®) process uses drop dispensing of UV curable resists for high resolution patterning. Several applications, including patterned media, are better, and more economically served by a full substrate patterning process since the alignment requirements are minimal. Patterned media is particularly challenging because of the aggressive feature sizes necessary to achieve storage densities required for manufacturing beyond the current technology of perpendicular recording. In this paper, the key process steps for the application of J-FIL to pattern media fabrication are reviewed with special attention to substrate cleaning, vapor adhesion of the adhesion layer and imprint performance at >300 disk per hour. Also discussed are recent results for imprinting discrete track patterns at half pitches of 24nm and bit patterned media patterns at densities of 1 Tb/in2.

Lithography hotspot discovery at 70nm DRAM 300mm fab: process window qualification using design base binning

NASA Astrophysics Data System (ADS)

Chen, Daniel; Chen, Damian; Yen, Ray; Cheng, Mingjen; Lan, Andy; Ghaskadvi, Rajesh

2008-11-01

Identifying hotspots--structures that limit the lithography process window--become increasingly important as the industry relies heavily on RET to print sub-wavelength designs. KLA-Tencor's patented Process Window Qualification (PWQ) methodology has been used for this purpose in various fabs. PWQ methodology has three key advantages (a) PWQ Layout--to obtain the best sensitivity (b) Design Based Binning--for pattern repeater analysis (c) Intelligent sampling--for the best DOI sampling rate. This paper evaluates two different analysis strategies for SEM review sampling successfully deployed at Inotera Memories, Inc. We propose a new approach combining the location repeater and pattern repeaters. Based on a recent case study the new sampling flow reduces the data analysis and sampling time from 6 hours to 1.5 hour maintaining maximum DOI sample rate.

Performance of the ALTA 3500 scanned-laser mask lithography system

NASA Astrophysics Data System (ADS)

Buck, Peter D.; Buxbaum, Alex H.; Coleman, Thomas P.; Tran, Long

1998-09-01

The ALTA 3500, an advanced scanned-laser mask lithography tool produced by Etec, was introduced to the marketplace in September 1997. The system architecture was described and an initial performance evaluation was presented. This system, based on the ALTA 3000, uses a new 33.3X, 0.8 NA final reduction lens to reduce the spot size to 0.27 micrometers FWHM, thereby affording improved resolution and pattern acuity on the mask. To take advantage of the improved resolution, a new anisotropic chrome etch process has been developed and introduced along with change from Olin 895i resist to TOK iP3600 resist. In this paper we will more extensively describe the performance of the ALTA 3500 and the performance of these new processes.

Fabrication of absorption gratings with X-ray lithography for X-ray phase contrast imaging

NASA Astrophysics Data System (ADS)

Wang, Bo; Wang, Yu-Ting; Yi, Fu-Ting; Zhang, Tian-Chong; Liu, Jing; Zhou, Yue

2018-05-01

Grating-based X-ray phase contrast imaging is promising especially in the medical area. Two or three gratings are involved in grating-based X-ray phase contrast imaging in which the absorption grating of high-aspect-ratio is the most important device and the fabrication process is a great challenge. The material with large atomic number Z is used to fabricate the absorption grating for excellent absorption of X-ray, and Au is usually used. The fabrication process, which involves X-ray lithography, development and gold electroplating, is described in this paper. The absorption gratings with 4 μm period and about 100 μm height are fabricated and the high-aspect-ratio is 50.

Direct write electron beam lithography: a historical overview

NASA Astrophysics Data System (ADS)

Pfeiffer, Hans C.

2010-09-01

Maskless pattern generation capability in combination with practically limitless resolution made probe-forming electron beam systems attractive tools in the semiconductor fabrication process. However, serial exposure of pattern elements with a scanning beam is a slow process and throughput presented a key challenge in electron beam lithography from the beginning. To meet this challenge imaging concepts with increasing exposure efficiency have been developed projecting ever larger number of pixels in parallel. This evolution started in the 1960s with the SEM-type Gaussian beam systems writing one pixel at a time directly on wafers. During the 1970s IBM pioneered the concept of shaped beams containing multiple pixels which led to higher throughput and an early success of e-beam direct write (EBDW) in large scale manufacturing of semiconductor chips. EBDW in a mix-and match approach with optical lithography provided unique flexibility in part number management and cycle time reduction and proved extremely cost effective in IBM's Quick-Turn-Around-Time (QTAT) facilities. But shaped beams did not keep pace with Moore's law because of limitations imposed by the physics of charged particles: Coulomb interactions between beam electrons cause image blur and consequently limit beam current and throughput. A new technology approach was needed. Physically separating beam electrons into multiple beamlets to reduce Coulomb interaction led to the development of massively parallel projection of pixels. Electron projection lithography (EPL) - a mask based imaging technique emulating optical steppers - was pursued during the 1990s by Bell Labs with SCALPEL and by IBM with PREVAIL in partnership with Nikon. In 2003 Nikon shipped the first NCR-EB1A e-beam stepper based on the PREVAIL technology to Selete. It exposed pattern segments containing 10 million pixels in single shot and represented the first successful demonstration of massively parallel pixel projection. However the window of opportunity for EPL had closed with the quick implementation of immersion lithography and the interest of the industry has since shifted back to maskless lithography (ML2). This historical overview of EBDW will highlight opportunities and limitation of the technology with particular focus on technical challenges facing the current ML2 development efforts in Europe and the US. A brief status report and risk assessment of the ML2 approaches will be provided.

Firefly: an optical lithographic system for the fabrication of holographic security labels

NASA Astrophysics Data System (ADS)

Calderón, Jorge; Rincón, Oscar; Amézquita, Ricardo; Pulido, Iván.; Amézquita, Sebastián.; Bernal, Andrés.; Romero, Luis; Agudelo, Viviana

2016-03-01

This paper introduces Firefly, an optical lithography origination system that has been developed to produce holographic masters of high quality. This mask-less lithography system has a resolution of 418 nm half-pitch, and generates holographic masters with the optical characteristics required for security applications of level 1 (visual verification), level 2 (pocket reader verification) and level 3 (forensic verification). The holographic master constitutes the main core of the manufacturing process of security holographic labels used for the authentication of products and documents worldwide. Additionally, the Firefly is equipped with a software tool that allows for the hologram design from graphic formats stored in bitmaps. The software is capable of generating and configuring basic optical effects such as animation and color, as well as effects of high complexity such as Fresnel lenses, engraves and encrypted images, among others. The Firefly technology gathers together optical lithography, digital image processing and the most advanced control systems, making possible a competitive equipment that challenges the best technologies in the industry of holographic generation around the world. In this paper, a general description of the origination system is provided as well as some examples of its capabilities.

Holistic approach for overlay and edge placement error to meet the 5nm technology node requirements

NASA Astrophysics Data System (ADS)

Mulkens, Jan; Slachter, Bram; Kubis, Michael; Tel, Wim; Hinnen, Paul; Maslow, Mark; Dillen, Harm; Ma, Eric; Chou, Kevin; Liu, Xuedong; Ren, Weiming; Hu, Xuerang; Wang, Fei; Liu, Kevin

2018-03-01

In this paper, we discuss the metrology methods and error budget that describe the edge placement error (EPE). EPE quantifies the pattern fidelity of a device structure made in a multi-patterning scheme. Here the pattern is the result of a sequence of lithography and etching steps, and consequently the contour of the final pattern contains error sources of the different process steps. EPE is computed by combining optical and ebeam metrology data. We show that high NA optical scatterometer can be used to densely measure in device CD and overlay errors. Large field e-beam system enables massive CD metrology which is used to characterize the local CD error. Local CD distribution needs to be characterized beyond 6 sigma, and requires high throughput e-beam system. We present in this paper the first images of a multi-beam e-beam inspection system. We discuss our holistic patterning optimization approach to understand and minimize the EPE of the final pattern. As a use case, we evaluated a 5-nm logic patterning process based on Self-Aligned-QuadruplePatterning (SAQP) using ArF lithography, combined with line cut exposures using EUV lithography.

Mask replication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Selinidis, Kosta S.; Jones, Chris; Doyle, Gary F.; Brown, Laura; Imhof, Joseph; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

2011-11-01

The Jet and Flash Imprint Lithography (J-FILTM) process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105imprints. This suggests that tens of thousands of templates/masks will be required to satisfy the needs of a manufacturing environment. Electron-beam patterning is too slow to feasibly deliver these volumes, but instead can provide a high quality "master" mask which can be replicated many times with an imprint lithography tool. This strategy has the capability to produce the required supply of "working" templates/masks. In this paper, we review the development of the mask form factor, imprint replication tools and the semiconductor mask replication process. A PerfectaTM MR5000 mask replication tool has been developed specifically to pattern replica masks from an ebeam written master. Performance results, including image placement, critical dimension uniformity, and pattern transfer are covered in detail.

Top coat or no top coat for immersion lithography?

NASA Astrophysics Data System (ADS)

Stepanenko, N.; Kim, Hyun-Woo; Kishimura, S.; Van Den Heuvel, D.; Vandenbroeck, N.; Kocsis, M.; Foubert, P.; Maenhoudt, M.; Ercken, M.; Van Roey, F.; Gronheid, R.; Pollentier, I.; Vangoidsenhoven, D.; Delvaux, C.; Baerts, C.; O'Brien, S.; Fyen, W.; Wells, G.

2006-03-01

Since the moment immersion lithography appeared in the roadmaps of IC manufacturers, the question whether to use top coats has become one of the important topics for discussions. The top coats used in immersion lithography have proved to serve as good protectors from leaching of the resist components (PAGs, bases) into the water. However their application complicates the process and may lead to two side effects. First, top coats can affect the process window and resist profile depending on the material's refractive index, thickness, acidity, chemical interaction with the resist and the soaking time. Second, the top coat application may increase the total amount of defects on the wafer. Having an immersion resist which could work without the top coat would be a preferable solution. Still, it is quite challenging to make such a resist as direct water/resist interaction may also result in process window changes, CD variations, generation of additional defects. We have performed a systematic evaluation of a large number of immersion resist and top coat combinations, using the ASML XT:1250Di scanner at IMEC. The samples for the experiments were provided by all the leading resist and top coat suppliers. Particular attention was paid to how the resist and top coat materials from different vendors interacted with each other. Among the factors which could influence the total amount of defects or CD variations on the wafer were: the material's dynamic contact angle and its interaction with the scanner stage speed, top coat thickness and intermixing layer formation, water uptake and leaching. We have examined the importance of all mentioned factors, using such analytical techniques as Resist Development Analyser (RDA), Quartz Crystal Microbalance (QCM), Mass Spectroscopy (MS) and scatterometry. We have also evaluated the influence of the pre- and pos- exposure rinse processes on the defectivity. In this paper we will present the data on imaging and defectivity performance of the resists with and without the use of top coats. So far we can conclude that top coat/resist approach used in immersion lithography needs some more improvements (i.e. process, materials properties) in order to be implemented in high volume manufacturing.

Characterization of Antisticking Layers for UV Nanoimprint Lithography Molds with Scanning Probe Microscopy

NASA Astrophysics Data System (ADS)

Masaaki Kurihara,; Sho Hatakeyama,; Noriko Yamada,; Takeya Shimomura,; Takaharu Nagai,; Kouji Yoshida,; Tatsuya Tomita,; Morihisa Hoga,; Naoya Hayashi,; Hiroyuki Ohtani,; Masamichi Fujihira,

2010-06-01

Antisticking layers (ASLs) on UV nanoimprint lithography (UV-NIL) molds were characterized by scanning probe microscopies (SPMs) in addition to macroscopic analyses of work of adhesion and separation force. Local physical properties of the ASLs were measured by atomic force microscopy (AFM) and friction force microscopy (FFM). The behavior of local adhesive forces measured with AFM on several surfaces was consistent with that of work of adhesion obtained from contact angle. The ASLs were coated by two different processes, i.e., one is a vapor-phase process and the other a spin-coating process. The homogeneity of the ASLs prepared by the vapor-phase process was better than that of those prepared by the spin-coating process. In addition, we measured the thicknesses of ASL patterns prepared by a lift-off method to investigate the effect of the ASL thicknesses on critical dimensions of the molds with ASLs and found that this effect is not negligible.

Via patterning in the 7-nm node using immersion lithography and graphoepitaxy directed self-assembly

NASA Astrophysics Data System (ADS)

Doise, Jan; Bekaert, Joost; Chan, Boon Teik; Hori, Masafumi; Gronheid, Roel

2017-04-01

Insertion of a graphoepitaxy directed self-assembly process as a via patterning technology into integrated circuit fabrication is seriously considered for the 7-nm node and beyond. At these dimensions, a graphoepitaxy process using a cylindrical block copolymer that enables hole multiplication can alleviate costs by extending 193-nm immersion-based lithography and significantly reducing the number of masks that would be required per layer. To be considered for implementation, it needs to be proved that this approach can achieve the required pattern quality in terms of defects and variability using a representative, aperiodic design. The patterning of a via layer from an actual 7-nm node logic layout is demonstrated using immersion lithography and graphoepitaxy directed self-assembly in a fab-like environment. The performance of the process is characterized in detail on a full 300-mm wafer scale. The local variability in an edge placement error of the obtained patterns (4.0 nm 3σ for singlets) is in line with the recent results in the field and significantly less than of the prepattern (4.9 nm 3σ for singlets). In addition, it is expected that pattern quality can be further improved through an improved mask design and optical proximity correction. No major complications for insertion of the graphoepitaxy directed self-assembly into device manufacturing were observed.

Microfluidic-based photocatalytic microreactor for environmental application: a review of fabrication substrates and techniques, and operating parameters.

PubMed

Das, Susmita; Srivastava, Vimal Chandra

2016-06-08

Photochemical technology with microfluidics is emerging as a new platform in environmental science. Microfluidic technology has various advantages, like better mixing and a shorter diffusion distance for the reactants and products; and uniform distribution of light on the photocatalyst. Depending on the material type and related applications, several fabrication techniques have been adopted by various researchers. Microreactors have been prepared by various techniques, such as lithography, etching, mechanical microcutting technology, etc. Lithography can be classified into photolithography, soft lithography and X-ray lithography techniques whereas the etching process is divided into wet etching (chemical etching) and dry etching (plasma etching) techniques. Several substrates, like polymers, such as polydimethyl-siloxane (PDMS), polymethyle-methacrylate (PMMA), hydrogel, etc.; metals, such as stainless steel, titanium foil, etc.; glass, such as silica capillary, glass slide, etc.; and ceramics have been used for microchannel fabrication. During degradation in a microreactor, the degradation efficiency is affected by few important parameters such as flow rate, initial concentration of the target compound, microreactor dimensions, light intensity, photocatalyst structure and catalyst support. The present paper discusses and critically reviews fabrication techniques and substrates used for microchannel fabrication and critical operating parameters for organics, especially dye degradation in the microreactor. The kinetics of degradation has also been discussed.

3D nanofabrication inside rapid prototyped microfluidic channels showcased by wet-spinning of single micrometre fibres.

PubMed

Lölsberg, Jonas; Linkhorst, John; Cinar, Arne; Jans, Alexander; Kuehne, Alexander J C; Wessling, Matthias

2018-05-01

Microfluidics is an established multidisciplinary research domain with widespread applications in the fields of medicine, biotechnology and engineering. Conventional production methods of microfluidic chips have been limited to planar structures, preventing the exploitation of truly three-dimensional architectures for applications such as multi-phase droplet preparation or wet-phase fibre spinning. Here the challenge of nanofabrication inside a microfluidic chip is tackled for the showcase of a spider-inspired spinneret. Multiphoton lithography, an additive manufacturing method, was used to produce free-form microfluidic masters, subsequently replicated by soft lithography. Into the resulting microfluidic device, a three-dimensional spider-inspired spinneret was directly fabricated in-chip via multiphoton lithography. Applying this unprecedented fabrication strategy, the to date smallest printed spinneret nozzle is produced. This spinneret resides tightly sealed, connecting it to the macroscopic world. Its functionality is demonstrated by wet-spinning of single-digit micron fibres through a polyacrylonitrile coagulation process induced by a water sheath layer. The methodology developed here demonstrates fabrication strategies to interface complex architectures into classical microfluidic platforms. Using multiphoton lithography for in-chip fabrication adopts a high spatial resolution technology for improving geometry and thus flow control inside microfluidic chips. The showcased fabrication methodology is generic and will be applicable to multiple challenges in fluid control and beyond.

Development of a Wafer Positioning System for the Sandia Extreme Ultraviolet Lithography Tool

NASA Technical Reports Server (NTRS)

Wronosky, John B.; Smith, Tony G.; Darnold, Joel R.

1996-01-01

A wafer positioning system was recently developed by Sandia National Laboratories for an Extreme Ultraviolet Lithography (EUVL) tool. The system, which utilizes a magnetically levitated fine stage to provide ultra-precise positioning in all six degrees of freedom, incorporates technological improvements resulting from four years of prototype development. This paper describes the design, implementation, and functional capability of the system. Specifics regarding control system electronics, including software and control algorithm structure, as well as performance design goals and test results are presented. Potential system enhancements, some of which are in process, are also discussed.

How to measure a-few-nanometer-small LER occurring in EUV lithography processed feature

NASA Astrophysics Data System (ADS)

Kawada, Hiroki; Kawasaki, Takahiro; Kakuta, Junichi; Ikota, Masami; Kondo, Tsuyoshi

2018-03-01

For EUV lithography features we want to decrease the dose and/or energy of CD-SEM's probe beam because LER decreases with severe resist-material's shrink. Under such conditions, however, measured LER increases from true LER, due to LER bias that is fake LER caused by random noise in SEM image. A gap error occurs between the right and the left LERs. In this work we propose new procedures to obtain true LER by excluding the LER bias from the measured LER. To verify it we propose a LER's reference-metrology using TEM.

Inedible cellulose-based biomass resist material amenable to water-based processing for use in electron beam lithography

NASA Astrophysics Data System (ADS)

Takei, Satoshi; Maki, Hirotaka; Sugahara, Kigen; Ito, Kenta; Hanabata, Makoto

2015-07-01

An electron beam (EB) lithography method using inedible cellulose-based resist material derived from woody biomass has been successfully developed. This method allows the use of pure water in the development process instead of the conventionally used tetramethylammonium hydroxide and anisole. The inedible cellulose-based biomass resist material, as an alternative to alpha-linked disaccharides in sugar derivatives that compete with food supplies, was developed by replacing the hydroxyl groups in the beta-linked disaccharides with EB-sensitive 2-methacryloyloxyethyl groups. A 75 nm line and space pattern at an exposure dose of 19 μC/cm2, a resist thickness uniformity of less than 0.4 nm on a 200 mm wafer, and low film thickness shrinkage under EB irradiation were achieved with this inedible cellulose-based biomass resist material using a water-based development process.

Fabrication of amorphous IGZO thin film transistor using self-aligned imprint lithography with a sacrificial layer

NASA Astrophysics Data System (ADS)

Kim, Sung Jin; Kim, Hyung Tae; Choi, Jong Hoon; Chung, Ho Kyoon; Cho, Sung Min

2018-04-01

An amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) was fabricated by a self-aligned imprint lithography (SAIL) method with a sacrificial photoresist layer. The SAIL is a top-down method to fabricate a TFT using a three-dimensional multilayer etch mask having all pattern information for the TFT. The sacrificial layer was applied in the SAIL process for the purpose of removing the resin residues that were inevitably left when the etch mask was thinned by plasma etching. This work demonstrated that the a-IGZO TFT could be fabricated by the SAIL process with the sacrificial layer. Specifically, the simple fabrication process utilized in this study can be utilized for the TFT with a plasma-sensitive semiconductor such as the a-IGZO and further extended for the roll-to-roll TFT fabrication.

Holographic illuminator for synchrotron-based projection lithography systems

DOEpatents

Naulleau, Patrick P.

2005-08-09

The effective coherence of a synchrotron beam line can be tailored to projection lithography requirements by employing a moving holographic diffuser and a stationary low-cost spherical mirror. The invention is particularly suited for use in an illuminator device for an optical image processing system requiring partially coherent illumination. The illuminator includes: (1) a synchrotron source of coherent or partially coherent radiation which has an intrinsic coherence that is higher than the desired coherence, (2) a holographic diffuser having a surface that receives incident radiation from said source, (3) means for translating the surface of the holographic diffuser in two dimensions along a plane that is parallel to the surface of the holographic diffuser wherein the rate of the motion is fast relative to integration time of said image processing system; and (4) a condenser optic that re-images the surface of the holographic diffuser to the entrance plane of said image processing system.

Field emitter arrays and displays produced by ion tracking lithography

NASA Astrophysics Data System (ADS)

Felter, T. E.; Musket, R. G.; Bernhardt, A. F.

2005-12-01

When ions of sufficient electronic energy loss traverse a dielectric film or foil, they alter the chemical bonding along their nominally straight path within the material. A suitable etchant can quickly dissolve these so-called latent tracks leaving holes of small diameter (∼10 nm) but long length - several microns. Continuing the etching process gradually increases the diameter reproducibly and uniformly. The trackable medium can be applied as a uniform film onto large substrates. The small, monodisperse holes produced by this track etching can be used in conjunction with additional thin film processing to create functional structures attached to the substrate. For example, Lawrence Livermore National Laboratory and Candescent Technologies Corporation (CTC) co-developed a process to make arrays of gated field emitters (∼100 nm diameter electron guns) for CTC's Thin CRTTM displays, which have been fabricated to diagonal dimensions >13 in. Additional technological applications of ion tracking lithography will be briefly covered.

The Introduction and Early Use of Lithography in the United States.

ERIC Educational Resources Information Center

Barnhill, Georgia B.

This paper discusses the use of lithography in the United States in the early 1800s. Highlights include: the development of lithography in Germany between 1796 and 1798; early expectations for lithography; competition against the existing technology for the production of images--relief prints and copper-plate engravings; examples of 18th-century…

Data Compression for Maskless Lithography Systems: Architecture, Algorithms and Implementation

DTIC Science & Technology

2008-05-19

Data Compression for Maskless Lithography Systems: Architecture, Algorithms and Implementation Vito Dai Electrical Engineering and Computer Sciences...servers or to redistribute to lists, requires prior specific permission. Data Compression for Maskless Lithography Systems: Architecture, Algorithms and...for Maskless Lithography Systems: Architecture, Algorithms and Implementation Copyright 2008 by Vito Dai 1 Abstract Data Compression for Maskless

Spun-wrapped aligned nanofiber (SWAN) lithography for fabrication of micro/nano-structures on 3D objects

NASA Astrophysics Data System (ADS)

Ye, Zhou; Nain, Amrinder S.; Behkam, Bahareh

2016-06-01

Fabrication of micro/nano-structures on irregularly shaped substrates and three-dimensional (3D) objects is of significant interest in diverse technological fields. However, it remains a formidable challenge thwarted by limited adaptability of the state-of-the-art nanolithography techniques for nanofabrication on non-planar surfaces. In this work, we introduce Spun-Wrapped Aligned Nanofiber (SWAN) lithography, a versatile, scalable, and cost-effective technique for fabrication of multiscale (nano to microscale) structures on 3D objects without restriction on substrate material and geometry. SWAN lithography combines precise deposition of polymeric nanofiber masks, in aligned single or multilayer configurations, with well-controlled solvent vapor treatment and etching processes to enable high throughput (>10-7 m2 s-1) and large-area fabrication of sub-50 nm to several micron features with high pattern fidelity. Using this technique, we demonstrate whole-surface nanopatterning of bulk and thin film surfaces of cubes, cylinders, and hyperbola-shaped objects that would be difficult, if not impossible to achieve with existing methods. We demonstrate that the fabricated feature size (b) scales with the fiber mask diameter (D) as b1.5 ~ D. This scaling law is in excellent agreement with theoretical predictions using the Johnson, Kendall, and Roberts (JKR) contact theory, thus providing a rational design framework for fabrication of systems and devices that require precisely designed multiscale features.Fabrication of micro/nano-structures on irregularly shaped substrates and three-dimensional (3D) objects is of significant interest in diverse technological fields. However, it remains a formidable challenge thwarted by limited adaptability of the state-of-the-art nanolithography techniques for nanofabrication on non-planar surfaces. In this work, we introduce Spun-Wrapped Aligned Nanofiber (SWAN) lithography, a versatile, scalable, and cost-effective technique for fabrication of multiscale (nano to microscale) structures on 3D objects without restriction on substrate material and geometry. SWAN lithography combines precise deposition of polymeric nanofiber masks, in aligned single or multilayer configurations, with well-controlled solvent vapor treatment and etching processes to enable high throughput (>10-7 m2 s-1) and large-area fabrication of sub-50 nm to several micron features with high pattern fidelity. Using this technique, we demonstrate whole-surface nanopatterning of bulk and thin film surfaces of cubes, cylinders, and hyperbola-shaped objects that would be difficult, if not impossible to achieve with existing methods. We demonstrate that the fabricated feature size (b) scales with the fiber mask diameter (D) as b1.5 ~ D. This scaling law is in excellent agreement with theoretical predictions using the Johnson, Kendall, and Roberts (JKR) contact theory, thus providing a rational design framework for fabrication of systems and devices that require precisely designed multiscale features. Electronic supplementary information (ESI) available: SWAN lithography on silicon; comparison of SWAN lithography and state-of-the-art nanopatterning methods; replica molding using SWAN lithography fabricated template; PDMS nanofluidic device, gold nanopattern characterization. See DOI: 10.1039/c6nr03323g

George E. Pake Prize: A Few Challenges in the Evolution of Semiconductor Device/Manufacturing Technology

NASA Astrophysics Data System (ADS)

Doering, Robert

In the early 1980s, the semiconductor industry faced the related challenges of ``scaling through the one-micron barrier'' and converting single-level-metal NMOS integrated circuits to multi-level-metal CMOS. Multiple advances in lithography technology and device materials/process integration led the way toward the deep-sub-micron transistors and interconnects that characterize today's electronic chips. In the 1990s, CMOS scaling advanced at an accelerated pace enabled by rapid advances in many aspects of optical lithography. However, the industry also needed to continue the progress in manufacturing on ever-larger silicon wafers to maintain economy-of-scale trends. Simultaneously, the increasing complexity and absolute-precision requirements of manufacturing compounded the necessity for new processes, tools, and control methodologies. This talk presents a personal perspective on some of the approaches that addressed the aforementioned challenges. In particular, early work on integrating silicides, lightly-doped-drain FETs, shallow recessed isolation, and double-level metal will be discussed. In addition, some pioneering efforts in deep-UV lithography and single-wafer processing will be covered. The latter will be mainly based on results from the MMST Program - a 100 M +, 5-year R&D effort, funded by DARPA, the U.S. Air Force, and Texas Instruments, that developed a wide range of new technologies for advanced semiconductor manufacturing. The major highlight of the program was the demonstration of sub-3-day cycle time for manufacturing 350-nm CMOS integrated circuits in 1993. This was principally enabled by the development of: (1) 100% single-wafer processing, including rapid-thermal processing (RTP), and (2) computer-integrated-manufacturing (CIM), including real-time, in-situ process control.

A high resolution water soluble fullerene molecular resist for electron beam lithography.

PubMed

Chen, X; Palmer, R E; Robinson, A P G

2008-07-09

Traditionally, many lithography resists have used hazardous, environmentally damaging or flammable chemicals as casting solvent and developer. There is now a strong drive towards processes that are safer and more environmentally friendly. We report nanometre-scale patterning of a fullerene molecular resist film with electron beam lithography, using water as casting solvent and developer. Negative tone behaviour is demonstrated after exposure and development. The sensitivity of this resist to 20 keV electrons is 1.5 × 10(-2) C cm(-2). Arrays of lines with a width of 30-35 nm and pitches of 200 and 400 nm, and arrays of dots with a diameter of 40 nm and a pitch of 200 nm have been patterned at 30 keV. The etch durability of this resist was found to be ∼2 times that of a standard novolac based resist. Initial results of the chemical amplification of this material for enhanced sensitivity are also presented.

Rapid fabrication of embossing tools for the production of polymeric microfluidic devices for bioanalytical applications

NASA Astrophysics Data System (ADS)

Ford, Sean M.; McCandless, Andrew B.; Liu, Xuezhu; Soper, Steven A.

2001-09-01

In this paper we present embossing tools that were fabricated using both UV and X-ray lithography. The embossing tools created were used to emboss microfluidic channels for bioanalytical applications. Specifically, two tools were fabricated. One, using x-ray lithography, was fabricated for electrophoretic separations of DNA restriction fragment analysis. A second tool, fabricated using SU8, was designed for micro PCR applications. Depths of both tools were approximately 100 micrometers . Both tools were made by directly electroforming nickel on a stainless steel base. Fabrication time for the tool fabricated using x-ray lithography was less than 1 week, and largely depended on the availability of the x-ray source. The SU8 embossing tool was fabricated in less than 24 hours. The resulting nickel electroforms from both processes were extremely robust and did not fail under embossing conditions required for PMMA and/or polycarbonate. Some problems removing SU8 after electroforming were sen for smaller size gaps between nickel structures.

Mapper: high throughput maskless lithography

NASA Astrophysics Data System (ADS)

Kuiper, V.; Kampherbeek, B. J.; Wieland, M. J.; de Boer, G.; ten Berge, G. F.; Boers, J.; Jager, R.; van de Peut, T.; Peijster, J. J. M.; Slot, E.; Steenbrink, S. W. H. K.; Teepen, T. F.; van Veen, A. H. V.

2009-01-01

Maskless electron beam lithography, or electron beam direct write, has been around for a long time in the semiconductor industry and was pioneered from the mid-1960s onwards. This technique has been used for mask writing applications as well as device engineering and in some cases chip manufacturing. However because of its relatively low throughput compared to optical lithography, electron beam lithography has never been the mainstream lithography technology. To extend optical lithography double patterning, as a bridging technology, and EUV lithography are currently explored. Irrespective of the technical viability of both approaches, one thing seems clear. They will be expensive [1]. MAPPER Lithography is developing a maskless lithography technology based on massively-parallel electron-beam writing with high speed optical data transport for switching the electron beams. In this way optical columns can be made with a throughput of 10-20 wafers per hour. By clustering several of these columns together high throughputs can be realized in a small footprint. This enables a highly cost-competitive alternative to double patterning and EUV alternatives. In 2007 MAPPER obtained its Proof of Lithography milestone by exposing in its Demonstrator 45 nm half pitch structures with 110 electron beams in parallel, where all the beams where individually switched on and off [2]. In 2008 MAPPER has taken a next step in its development by building several tools. A new platform has been designed and built which contains a 300 mm wafer stage, a wafer handler and an electron beam column with 110 parallel electron beams. This manuscript describes the first patterning results with this 300 mm platform.

Manipulation of heat-diffusion channel in laser thermal lithography.

PubMed

Wei, Jingsong; Wang, Yang; Wu, Yiqun

2014-12-29

Laser thermal lithography is a good alternative method for forming small pattern feature size by taking advantage of the structural-change threshold effect of thermal lithography materials. In this work, the heat-diffusion channels of laser thermal lithography are first analyzed, and then we propose to manipulate the heat-diffusion channels by inserting thermal conduction layers in between channels. Heat-flow direction can be changed from the in-plane to the out-of-plane of the thermal lithography layer, which causes the size of the structural-change threshold region to become much smaller than the focused laser spot itself; thus, nanoscale marks can be obtained. Samples designated as "glass substrate/thermal conduction layer/thermal lithography layer (100 nm)/thermal conduction layer" are designed and prepared. Chalcogenide phase-change materials are used as thermal lithography layer, and Si is used as thermal conduction layer to manipulate heat-diffusion channels. Laser thermal lithography experiments are conducted on a home-made high-speed rotation direct laser writing setup with 488 nm laser wavelength and 0.90 numerical aperture of converging lens. The writing marks with 50-60 nm size are successfully obtained. The mark size is only about 1/13 of the focused laser spot, which is far smaller than that of the light diffraction limit spot of the direct laser writing setup. This work is useful for nanoscale fabrication and lithography by exploiting the far-field focusing light system.

EUV process improvement with novel litho track hardware

NASA Astrophysics Data System (ADS)

Stokes, Harold; Harumoto, Masahiko; Tanaka, Yuji; Kaneyama, Koji; Pieczulewski, Charles; Asai, Masaya

2017-03-01

Currently, there are many developments in the field of EUV lithography that are helping to move it towards increased HVM feasibility. Targeted improvements in hardware design for advanced lithography are of interest to our group specifically for metrics such as CD uniformity, LWR, and defect density. Of course, our work is focused on EUV process steps that are specifically affected by litho track performance, and consequently, can be improved by litho track design improvement and optimization. In this study we are building on our experience to provide continual improvement for LWR, CDU, and Defects as applied to a standard EUV process by employing novel hardware solutions on our SOKUDO DUO coat develop track system. Although it is preferable to achieve such improvements post-etch process we feel, as many do, that improvements after patterning are a precursor to improvements after etching. We hereby present our work utilizing the SOKUDO DUO coat develop track system with an ASML NXE:3300 in the IMEC (Leuven, Belgium) cleanroom environment to improve aggressive dense L/S patterns.

Performance of ASML YieldStar μDBO overlay targets for advanced lithography nodes C028 and C014 overlay process control

NASA Astrophysics Data System (ADS)

Blancquaert, Yoann; Dezauzier, Christophe; Depre, Jerome; Miqyass, Mohamed; Beltman, Jan

2013-04-01

Continued tightening of overlay control budget in semiconductor lithography drives the need for improved metrology capabilities. Aggressive improvements are needed for overlay metrology speed, accuracy and precision. This paper is dealing with the on product metrology results of a scatterometry based platform showing excellent production results on resolution, precision, and tool matching for overlay. We will demonstrate point to point matching between tool generations as well as between target sizes and types. Nowadays, for the advanced process nodes a lot of information is needed (Higher order process correction, Reticle fingerprint, wafer edge effects) to quantify process overlay. For that purpose various overlay sampling schemes are evaluated: ultra- dense, dense and production type. We will show DBO results from multiple target type and shape for on product overlay control for current and future node down to at least 14 nm node. As overlay requirements drive metrology needs, we will evaluate if the new metrology platform meets the overlay requirements.

The capability of lithography simulation based on MVM-SEM® system

NASA Astrophysics Data System (ADS)

Yoshikawa, Shingo; Fujii, Nobuaki; Kanno, Koichi; Imai, Hidemichi; Hayano, Katsuya; Miyashita, Hiroyuki; Shida, Soichi; Murakawa, Tsutomu; Kuribara, Masayuki; Matsumoto, Jun; Nakamura, Takayuki; Matsushita, Shohei; Hara, Daisuke; Pang, Linyong

2015-10-01

The 1Xnm technology node lithography is using SMO-ILT, NTD or more complex pattern. Therefore in mask defect inspection, defect verification becomes more difficult because many nuisance defects are detected in aggressive mask feature. One key Technology of mask manufacture is defect verification to use aerial image simulator or other printability simulation. AIMS™ Technology is excellent correlation for the wafer and standards tool for defect verification however it is difficult for verification over hundred numbers or more. We reported capability of defect verification based on lithography simulation with a SEM system that architecture and software is excellent correlation for simple line and space.[1] In this paper, we use a SEM system for the next generation combined with a lithography simulation tool for SMO-ILT, NTD and other complex pattern lithography. Furthermore we will use three dimension (3D) lithography simulation based on Multi Vision Metrology SEM system. Finally, we will confirm the performance of the 2D and 3D lithography simulation based on SEM system for a photomask verification.

An assessment of the process capabilities of nanoimprint lithography

NASA Astrophysics Data System (ADS)

Balla, Tobias; Spearing, S. Mark; Monk, Andrew

2008-09-01

Nanoimprint lithography (NIL) is an emerging nanofabrication tool, able to replicate imprint patterns quickly and at high volumes. The present study was performed in order to define the capabilities of NIL, based on a study of published research and to identify the application areas where NIL has the greatest potential. The process attributes of different NIL process chains were analysed, and their process capabilities were compared to identify trends and process limitations. The attributes chosen include the line width, relief height, initial resist thickness, residual layer thickness, imprint area and line width tolerances. In each case well-defined limits can be identified, which are a direct result of the mechanisms involved in the NIL process. These quantitative results were compared with the assessments of individuals in academia and within the microfabrication industry. The results suggest NIL is most suited to producing photonic, microfluidic and patterned media applications, with photonic applications the closest to market. NIL needs to address overlay alignment issues for wider use, while an analysis is needed for each market, as to whether NIL adds value.

Defect reduction of high-density full-field patterns in jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Singh, Lovejeet; Luo, Kang; Ye, Zhengmao; Xu, Frank; Haase, Gaddi; Curran, David; LaBrake, Dwayne; Resnick, Douglas; Sreenivasan, S. V.

2011-04-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash Imprint Lithography (J-FIL) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed leaving a patterned resist on the substrate. Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the defect specifications of high end memory devices. Typical defectivity targets are on the order of 0.10/cm2. This work summarizes the results of defect inspections focusing on two key defect types; random non-fill defects occurring during the resist filling process and repeater defects caused by interactions with particles on the substrate. Non-fill defectivity must always be considered within the context of process throughput. The key limiting throughput step in an imprint process is resist filling time. As a result, it is critical to characterize the filling process by measuring non-fill defectivity as a function of fill time. Repeater defects typically have two main sources; mask defects and particle related defects. Previous studies have indicated that soft particles tend to cause non-repeating defects. Hard particles, on the other hand, can cause either resist plugging or mask damage. In this work, an Imprio 500 twenty wafer per hour (wph) development tool was used to study both defect types. By carefully controlling the volume of inkjetted resist, optimizing the drop pattern and controlling the resist fluid front during spreading, fill times of 1.5 seconds were achieved with non-fill defect levels of approximately 1.2/cm2. Longevity runs were used to study repeater defects and a nickel contamination was identified as the key source of particle induced repeater defects.

Polarization manipulation in single refractive prism based holography lithography

NASA Astrophysics Data System (ADS)

Xiong, Wenjie; Xu, Yi; Xiao, Yujian; Lv, Xiaoxu; Wu, Lijun

2015-01-01

We propose theoretically and demonstrate experimentally a simple but effective strategy for polarization manipulation in single refractive prism based holographic lithography. By tuning the polarization of a single laser beam, we can obtain the pill shape interference pattern with a high-contrast where a complex optical setup and multiple polarizers are needed in the conventional holography lithography. Fabrication of pill shape two-dimensional polymer photonic crystals using one beam and one shoot holography lithography is shown as an example to support our theoretical results. This integrated polarization manipulation technique can release the crucial stability restrictions imposed on the multiple beams holography lithography.

Glass ceramic ZERODUR enabling nanometer precision

NASA Astrophysics Data System (ADS)

Jedamzik, Ralf; Kunisch, Clemens; Nieder, Johannes; Westerhoff, Thomas

2014-03-01

The IC Lithography roadmap foresees manufacturing of devices with critical dimension of < 20 nm. Overlay specification of single digit nanometer asking for nanometer positioning accuracy requiring sub nanometer position measurement accuracy. The glass ceramic ZERODUR® is a well-established material in critical components of microlithography wafer stepper and offered with an extremely low coefficient of thermal expansion (CTE), the tightest tolerance available on market. SCHOTT is continuously improving manufacturing processes and it's method to measure and characterize the CTE behavior of ZERODUR® to full fill the ever tighter CTE specification for wafer stepper components. In this paper we present the ZERODUR® Lithography Roadmap on the CTE metrology and tolerance. Additionally, simulation calculations based on a physical model are presented predicting the long term CTE behavior of ZERODUR® components to optimize dimensional stability of precision positioning devices. CTE data of several low thermal expansion materials are compared regarding their temperature dependence between - 50°C and + 100°C. ZERODUR® TAILORED 22°C is full filling the tight CTE tolerance of +/- 10 ppb / K within the broadest temperature interval compared to all other materials of this investigation. The data presented in this paper explicitly demonstrates the capability of ZERODUR® to enable the nanometer precision required for future generation of lithography equipment and processes.

Ultimate intra-wafer critical dimension uniformity control by using lithography and etch tool corrections

NASA Astrophysics Data System (ADS)

Kubis, Michael; Wise, Rich; Reijnen, Liesbeth; Viatkina, Katja; Jaenen, Patrick; Luca, Melisa; Mernier, Guillaume; Chahine, Charlotte; Hellin, David; Kam, Benjamin; Sobieski, Daniel; Vertommen, Johan; Mulkens, Jan; Dusa, Mircea; Dixit, Girish; Shamma, Nader; Leray, Philippe

2016-03-01

With shrinking design rules, the overall patterning requirements are getting aggressively tighter. For the 7-nm node and below, allowable CD uniformity variations are entering the Angstrom region (ref [1]). Optimizing inter- and intra-field CD uniformity of the final pattern requires a holistic tuning of all process steps. In previous work, CD control with either litho cluster or etch tool corrections has been discussed. Today, we present a holistic CD control approach, combining the correction capability of the etch tool with the correction capability of the exposure tool. The study is done on 10-nm logic node wafers, processed with a test vehicle stack patterning sequence. We include wafer-to-wafer and lot-to-lot variation and apply optical scatterometry to characterize the fingerprints. Making use of all available correction capabilities (lithography and etch), we investigated single application of exposure tool corrections and of etch tool corrections as well as combinations of both to reach the lowest CD uniformity. Results of the final pattern uniformity based on single and combined corrections are shown. We conclude on the application of this holistic lithography and etch optimization to 7nm High-Volume manufacturing, paving the way to ultimate within-wafer CD uniformity control.

Layout compliance for triple patterning lithography: an iterative approach

NASA Astrophysics Data System (ADS)

Yu, Bei; Garreton, Gilda; Pan, David Z.

2014-10-01

As the semiconductor process further scales down, the industry encounters many lithography-related issues. In the 14nm logic node and beyond, triple patterning lithography (TPL) is one of the most promising techniques for Metal1 layer and possibly Via0 layer. As one of the most challenging problems in TPL, recently layout decomposition efforts have received more attention from both industry and academia. Ideally the decomposer should point out locations in the layout that are not triple patterning decomposable and therefore manual intervention by designers is required. A traditional decomposition flow would be an iterative process, where each iteration consists of an automatic layout decomposition step and manual layout modification task. However, due to the NP-hardness of triple patterning layout decomposition, automatic full chip level layout decomposition requires long computational time and therefore design closure issues continue to linger around in the traditional flow. Challenged by this issue, we present a novel incremental layout decomposition framework to facilitate accelerated iterative decomposition. In the first iteration, our decomposer not only points out all conflicts, but also provides the suggestions to fix them. After the layout modification, instead of solving the full chip problem from scratch, our decomposer can provide a quick solution for a selected portion of layout. We believe this framework is efficient, in terms of performance and designer friendly.

Advances in maskless and mask-based optical lithography on plastic flexible substrates

NASA Astrophysics Data System (ADS)

Barbu, Ionut; Ivan, Marius G.; Giesen, Peter; Van de Moosdijk, Michel; Meinders, Erwin R.

2009-12-01

Organic flexible electronics is an emerging technology with huge potential growth in the future which is likely to open up a complete new series of potential applications such as flexible OLED-based displays, urban commercial signage, and flexible electronic paper. The transistor is the fundamental building block of all these applications. A key challenge in patterning transistors on flexible plastic substrates stems from the in-plane nonlinear deformations as a consequence of foil expansion/shrinkage, moisture uptake, baking etc. during various processing steps. Optical maskless lithography is one of the potential candidates for compensating for these foil distortions by in-situ adjustment prior to exposure of the new layer image with respect to the already patterned layers. Maskless lithography also brings the added value of reducing the cost-of-ownership related to traditional mask-based tools by eliminating the need for expensive masks. For the purpose of this paper, single-layer maskless exposures at 355 nm were performed on gold-coated poly(ethylenenaphthalate) (PEN) flexible substrates temporarily attached to rigid carriers to ensure dimensional stability during processing. Two positive photoresists were employed for this study and the results on plastic foils were benchmarked against maskless as well as mask-based (ASML PAS 5500/100D stepper) exposures on silicon wafers.

New self-assembly strategies for next generation lithography

NASA Astrophysics Data System (ADS)

Schwartz, Evan L.; Bosworth, Joan K.; Paik, Marvin Y.; Ober, Christopher K.

2010-04-01

Future demands of the semiconductor industry call for robust patterning strategies for critical dimensions below twenty nanometers. The self assembly of block copolymers stands out as a promising, potentially lower cost alternative to other technologies such as e-beam or nanoimprint lithography. One approach is to use block copolymers that can be lithographically patterned by incorporating a negative-tone photoresist as the majority (matrix) phase of the block copolymer, paired with photoacid generator and a crosslinker moiety. In this system, poly(α-methylstyrene-block-hydroxystyrene)(PαMS-b-PHOST), the block copolymer is spin-coated as a thin film, processed to a desired microdomain orientation with long-range order, and then photopatterned. Therefore, selfassembly of the block copolymer only occurs in select areas due to the crosslinking of the matrix phase, and the minority phase polymer can be removed to produce a nanoporous template. Using bulk TEM analysis, we demonstrate how the critical dimension of this block copolymer is shown to scale with polymer molecular weight using a simple power law relation. Enthalpic interactions such as hydrogen bonding are used to blend inorganic additives in order to enhance the etch resistance of the PHOST block. We demonstrate how lithographically patternable block copolymers might fit in to future processing strategies to produce etch-resistant self-assembled features at length scales impossible with conventional lithography.

Immersion and dry lithography monitoring for flash memories (after develop inspection and photo cell monitor) using a darkfield imaging inspector with advanced binning technology

NASA Astrophysics Data System (ADS)

Parisi, P.; Mani, A.; Perry-Sullivan, C.; Kopp, J.; Simpson, G.; Renis, M.; Padovani, M.; Severgnini, C.; Piacentini, P.; Piazza, P.; Beccalli, A.

2009-12-01

After-develop inspection (ADI) and photo-cell monitoring (PM) are part of a comprehensive lithography process monitoring strategy. Capturing defects of interest (DOI) in the lithography cell rather than at later process steps shortens the cycle time and allows for wafer re-work, reducing overall cost and improving yield. Low contrast DOI and multiple noise sources make litho inspection challenging. Broadband brightfield inspectors provide the highest sensitivity to litho DOI and are traditionally used for ADI and PM. However, a darkfield imaging inspector has shown sufficient sensitivity to litho DOI, providing a high-throughput option for litho defect monitoring. On the darkfield imaging inspector, a very high sensitivity inspection is used in conjunction with advanced defect binning to detect pattern issues and other DOI and minimize nuisance defects. For ADI, this darkfield inspection methodology enables the separation and tracking of 'color variation' defects that correlate directly to CD variations allowing a high-sampling monitor for focus excursions, thereby reducing scanner re-qualification time. For PM, the darkfield imaging inspector provides sensitivity to critical immersion litho defects at a lower cost-of-ownership. This paper describes litho monitoring methodologies developed and implemented for flash devices for 65nm production and 45nm development using the darkfield imaging inspector.

Hybrid strategies for nanolithography and chemical patterning

NASA Astrophysics Data System (ADS)

Srinivasan, Charan

Remarkable technological advances in photolithography have extended patterning to the sub-50-nm regime. However, because photolithography is a top-down approach, it faces substantial technological and economic challenges in maintaining the downward scaling trends of feature sizes below 30 nm. Concurrently, fundamental research on chemical self-assembly has enabled the path to access molecular length scales. The key to the success of photolithography is its inherent economies of scale, which justify the large capital investment for its implementation. In this thesis research, top-down and bottom-up approaches have been combined synergistically, and these hybrid strategies have been employed in applications that do not have the economies of scale found in semiconductor chip manufacturing. The specific instances of techniques developed here include molecular-ruler lithography and a series of nanoscale chemical patterning methods. Molecular-ruler lithography utilizes self-assembled multilayered films as a sidewall spacer on initial photolithographically patterned gold features (parent) to place a second-generation feature (daughter) in precise proximity to the parent. The parent-daughter separation, which is on the nanometer length scale, is defined by the thickness of the molecular-ruler resist. Analogous to protocols followed in industry to evaluate lithographic performance, electrical test-pad structures were designed to interrogate the nanostructures patterned by molecular-ruler nanolithography, failure modes creating electrical shorts were mapped to each lithographic step, and subsequent lithographic optimization was performed to pattern nanoscale devices with excellent electrical performance. The optimized lithographic processes were applied to generate nanoscale devices such as nanowires and thin-film transistors (TFTs). Metallic nanowires were patterned by depositing a tertiary generation material in the nanogap and surrounding micron-scale regions, and then chemically removing the parent and daughter structures selectively. This processing was also performed on silicon-on-insulator substrates and the metallic nanowires were used as a hard mask to transfer the pattern to the single crystalline silicon epilayer resulting in a quaternary generation structure of single-crystalline silicon nanowire field-effect transistors. Additionally, the proof of concept for patterning nanoscale pentacene TFTs utilizing molecular-rulers was demonstrated. For applications in sub-100-nm lithography, the limitations on the relative heights of parent and daughter structures were overcome and processes to integrate molecular-ruler nanolithography with existing complementary metal-oxide-semiconductor (CMOS) processing were developed. Pattern transfer to underlying SiO2 substrates has opened a new avenue of opportunities to apply these nanostructures in nanofluidics and in non-traditional lithography such as imprint lithography. Additionally, the molecular-ruler process has been shown to increase the spatial density of features created by high-resolution techniques such as electron-beam lithography. A limitation of photolithography is its inability to pattern chemical functionality on surfaces. To overcome this limitation, two techniques were developed to extend nanolithography beyond semiconductors and apply them to patterning of self-assembled monolayers. First, a novel bilayer resist was devised to protect and to pattern chemical functionality on surfaces by being able to withstand conditions necessary for both chemical self-assembly and photooxidation of the Au-S bond while not disrupting the preexisting SAM. In addition to photolithography, soft-lithographic approaches such as microcontact printing are often used to create chemical patterns. In this work, a technique for the creation of chemical patterns of inserted molecules with dilute coverages (≤10%) was implemented. As part of the research in chemical patterning, a method for characterizing chemical patterns using scanning electron microscopy has been developed. These tools are the standard for metrology in nanolithography, and thus are readily accessible as our advances in chemical patterning are adopted and applied by the lithography community.

Progress on complementary patterning using plasmon-excited electron beamlets (Conference Presentation)

NASA Astrophysics Data System (ADS)

Du, Zhidong; Chen, Chen; Pan, Liang

2017-04-01

Maskless lithography using parallel electron beamlets is a promising solution for next generation scalable maskless nanolithography. Researchers have focused on this goal but have been unable to find a robust technology to generate and control high-quality electron beamlets with satisfactory brightness and uniformity. In this work, we will aim to address this challenge by developing a revolutionary surface-plasmon-enhanced-photoemission (SPEP) technology to generate massively-parallel electron beamlets for maskless nanolithography. The new technology is built upon our recent breakthroughs in plasmonic lenses, which will be used to excite and focus surface plasmons to generate massively-parallel electron beamlets through photoemission. Specifically, the proposed SPEP device consists of an array of plasmonic lens and electrostatic micro-lens pairs, each pair independently producing an electron beamlet. During lithography, a spatial optical modulator will dynamically project light onto individual plasmonic lenses to control the switching and brightness of electron beamlets. The photons incident onto each plasmonic lens are concentrated into a diffraction-unlimited spot as localized surface plasmons to excite the local electrons to near their vacuum levels. Meanwhile, the electrostatic micro-lens extracts the excited electrons to form a focused beamlet, which can be rastered across a wafer to perform lithography. Studies showed that surface plasmons can enhance the photoemission by orders of magnitudes. This SPEP technology can scale up the maskless lithography process to write at wafers per hour. In this talk, we will report the mechanism of the strong electron-photon couplings and the locally enhanced photoexcitation, design of a SPEP device, overview of our proof-of-concept study, and demonstrated parallel lithography of 20-50 nm features.

Integrating nanosphere lithography in device fabrication

NASA Astrophysics Data System (ADS)

Laurvick, Tod V.; Coutu, Ronald A.; Lake, Robert A.

2016-03-01

This paper discusses the integration of nanosphere lithography (NSL) with other fabrication techniques, allowing for nano-scaled features to be realized within larger microelectromechanical system (MEMS) based devices. Nanosphere self-patterning methods have been researched for over three decades, but typically not for use as a lithography process. Only recently has progress been made towards integrating many of the best practices from these publications and determining a process that yields large areas of coverage, with repeatability and enabled a process for precise placement of nanospheres relative to other features. Discussed are two of the more common self-patterning methods used in NSL (i.e. spin-coating and dip coating) as well as a more recently conceived variation of dip coating. Recent work has suggested the repeatability of any method depends on a number of variables, so to better understand how these variables affect the process a series of test vessels were developed and fabricated. Commercially available 3-D printing technology was used to incrementally alter the test vessels allowing for each variable to be investigated individually. With these deposition vessels, NSL can now be used in conjunction with other fabrication steps to integrate features otherwise unattainable through current methods, within the overall fabrication process of larger MEMS devices. Patterned regions in 1800 series photoresist with a thickness of ~700nm are used to capture regions of self-assembled nanospheres. These regions are roughly 2-5 microns in width, and are able to control the placement of 500nm polystyrene spheres by controlling where monolayer self-assembly occurs. The resulting combination of photoresist and nanospheres can then be used with traditional deposition or etch methods to utilize these fine scale features in the overall design.

Nanoimprinted polymer lasers with threshold below 100 W/cm2 using mixed-order distributed feedback resonators.

PubMed

Wang, Yue; Tsiminis, Georgios; Kanibolotsky, Alexander L; Skabara, Peter J; Samuel, Ifor D W; Turnbull, Graham A

2013-06-17

Organic semiconductor lasers were fabricated by UV-nanoimprint lithography with thresholds as low as 57 W/cm(2) under 4 ns pulsed operation. The nanoimprinted lasers employed mixed-order distributed feedback resonators, with second-order gratings surrounded by first-order gratings, combined with a light-emitting conjugated polymer. They were pumped by InGaN LEDs to produce green-emitting lasers, with thresholds of 208 W/cm(2) (102 nJ/pulse). These hybrid lasers incorporate a scalable UV-nanoimprint lithography process, compatible with high-performance LEDs, therefore we have demonstrated a coherent, compact, low-cost light source.

Fabrication of frequency selective surface for band stop IR-filter

NASA Astrophysics Data System (ADS)

Mishra, Akshita; Sudheer, Tiwari, P.; Mondal, P.; Bhatt, H.; Rai, V. N.; Srivastava, A. K.

2016-05-01

Fabrication and characterization of frequency selective surfaces (FSS) on silicon dioxide/ silicon is reported. Electron beam lithography based techniques are used for the fabrication of periodic slot structure in tungsten layer on silicon dioxide/silicon. The fabrication process consists of growth of SiO2 on silicon, tungsten deposition, electron beam lithography, and wet etching of tungsten. The optical characterization of the structural pattern was carried out using fourier transform infrared spectroscopy (FTIR). The reflectance spectra clearly show a resonance peak at 9.09 µm in the mid infrared region. This indicates that the patterned surface acts as band stop filter in the mid-infrared region.

Graphene as discharge layer for electron beam lithography on insulating substrate

NASA Astrophysics Data System (ADS)

Liu, Junku; Li, Qunqing; Ren, Mengxin; Zhang, Lihui; Chen, Mo; Fan, Shoushan

2013-09-01

Charging of insulating substrates is a common problem during Electron Beam lithography (EBL), which deflects the beam and distorts the pattern. A homogeneous, electrically conductive, and transparent graphene layer is used as a discharge layer for EBL processes on insulating substrates. The EBL resolution is improved compared with the metal discharge layer. Dense arrays of holes with diameters of 50 nm and gratings with line/space of 50/30 nm are obtained on quartz substrate. The pattern placement errors and proximity effect are suppressed over a large area and high quality complex nanostructures are fabricated using graphene as a conductive layer.

Methodology for evaluating pattern transfer completeness in inkjet printing with irregular edges

NASA Astrophysics Data System (ADS)

Huang, Bo-Cin; Chan, Hui-Ju; Hong, Jian-Wei; Lo, Cheng-Yao

2016-06-01

A methodology for quantifying and qualifying pattern transfer completeness in inkjet printing through examining both pattern dimensions and pattern contour deviations from reference design is proposed, which enables scientifically identifying and evaluating inkjet-printed lines, corners, circles, ellipses, and spirals with irregular edges of bulging, necking, and unpredictable distortions resulting from different process conditions. This methodology not only avoids differences in individual perceptions of ambiguous pattern distortions but also indicates the systematic effects of mechanical stresses applied in different directions to a polymer substrate, and is effective for both optical and electrical microscopy in direct and indirect lithography or lithography-free patterning.

Fabricating optical phantoms to simulate skin tissue properties and microvasculatures

NASA Astrophysics Data System (ADS)

Sheng, Shuwei; Wu, Qiang; Han, Yilin; Dong, Erbao; Xu, Ronald

2015-03-01

This paper introduces novel methods to fabricate optical phantoms that simulate the morphologic, optical, and microvascular characteristics of skin tissue. The multi-layer skin-simulating phantom was fabricated by a light-cured 3D printer that mixed and printed the colorless light-curable ink with the absorption and the scattering ingredients for the designated optical properties. The simulated microvascular network was fabricated by a soft lithography process to embed microchannels in polydimethylsiloxane (PDMS) phantoms. The phantoms also simulated vascular anomalies and hypoxia commonly observed in cancer. A dual-modal multispectral and laser speckle imaging system was used for oxygen and perfusion imaging of the tissue-simulating phantoms. The light-cured 3D printing technique and the soft lithography process may enable freeform fabrication of skin-simulating phantoms that embed microvessels for image and drug delivery applications.

Plasma-based EUV light source

DOEpatents

Shumlak, Uri; Golingo, Raymond; Nelson, Brian A.

2010-11-02

Various mechanisms are provided relating to plasma-based light source that may be used for lithography as well as other applications. For example, a device is disclosed for producing extreme ultraviolet (EUV) light based on a sheared plasma flow. The device can produce a plasma pinch that can last several orders of magnitude longer than what is typically sustained in a Z-pinch, thus enabling the device to provide more power output than what has been hitherto predicted in theory or attained in practice. Such power output may be used in a lithography system for manufacturing integrated circuits, enabling the use of EUV wavelengths on the order of about 13.5 nm. Lastly, the process of manufacturing such a plasma pinch is discussed, where the process includes providing a sheared flow of plasma in order to stabilize it for long periods of time.

REBL: design progress toward 16 nm half-pitch maskless projection electron beam lithography

NASA Astrophysics Data System (ADS)

McCord, Mark A.; Petric, Paul; Ummethala, Upendra; Carroll, Allen; Kojima, Shinichi; Grella, Luca; Shriyan, Sameet; Rettner, Charles T.; Bevis, Chris F.

2012-03-01

REBL (Reflective Electron Beam Lithography) is a novel concept for high speed maskless projection electron beam lithography. Originally targeting 45 nm HP (half pitch) under a DARPA funded contract, we are now working on optimizing the optics and architecture for the commercial silicon integrated circuit fabrication market at the equivalent of 16 nm HP. The shift to smaller features requires innovation in most major subsystems of the tool, including optics, stage, and metrology. We also require better simulation and understanding of the exposure process. In order to meet blur requirements for 16 nm lithography, we are both shrinking the pixel size and reducing the beam current. Throughput will be maintained by increasing the number of columns as well as other design optimizations. In consequence, the maximum stage speed required to meet wafer throughput targets at 16 nm will be much less than originally planned for at 45 nm. As a result, we are changing the stage architecture from a rotary design to a linear design that can still meet the throughput requirements but with more conventional technology that entails less technical risk. The linear concept also allows for simplifications in the datapath, primarily from being able to reuse pattern data across dies and columns. Finally, we are now able to demonstrate working dynamic pattern generator (DPG) chips, CMOS chips with microfabricated lenslets on top to prevent crosstalk between pixels.

The patterning center of excellence (CoE): an evolving lithographic enablement model

NASA Astrophysics Data System (ADS)

Montgomery, Warren; Chun, Jun Sung; Liehr, Michael; Tittnich, Michael

2015-03-01

As EUV lithography moves toward high-volume manufacturing (HVM), a key need for the lithography materials makers is access to EUV photons and imaging. The SEMATECH Resist Materials Development Center (RMDC) provided a solution path by enabling the Resist and Materials companies to work together (using SUNY Polytechnic Institute's Colleges of Nanoscale Science and Engineering (SUNY Poly CNSE) -based exposure systems), in a consortium fashion, in order to address the need for EUV photons. Thousands of wafers have been processed by the RMDC (leveraging the SUNY Poly CNSE/SEMATECH MET, SUNY Poly CNSE Alpha Demo Tool (ADT) and the SEMATECH Lawrence Berkeley MET) allowing many of the questions associated with EUV materials development to be answered. In this regard the activities associated with the RMDC are continuing. As the major Integrated Device Manufacturers (IDMs) have continued to purchase EUV scanners, Materials companies must now provide scanner based test data that characterizes the lithography materials they are producing. SUNY Poly CNSE and SEMATECH have partnered to evolve the RMDC into "The Patterning Center of Excellence (CoE)". The new CoE leverages the capability of the SUNY Poly CNSE-based full field ASML 3300 EUV scanner and combines that capability with EUV Microexposure (MET) systems resident in the SEMATECH RMDC to create an integrated lithography model which will allow materials companies to advance materials development in ways not previously possible.

Trends in imprint lithography for biological applications.

PubMed

Truskett, Van N; Watts, Michael P C

2006-07-01

Imprint lithography is emerging as an alternative nano-patterning technology to traditional photolithography that permits the fabrication of 2D and 3D structures with <100 nm resolution, patterning and modification of functional materials other than photoresist and is low cost, with operational ease for use in developing bio-devices. Techniques for imprint lithography, categorized as either 'molding and embossing' or 'transfer printing', will be discussed in the context of microarrays for genomics, proteomics and tissue engineering. Specifically, fabrication by nanoimprint lithography (NIL), UV-NIL, step and flash imprint lithography (S-FIL), micromolding by elastomeric stamps and micro- and nano-contact printing will be reviewed.

Plasmonic direct writing lithography with a macroscopical contact probe

NASA Astrophysics Data System (ADS)

Huang, Yuerong; Liu, Ling; Wang, Changtao; Chen, Weidong; Liu, Yunyue; Li, Ling

2018-05-01

In this work, we design a plasmonic direct writing lithography system with a macroscopical contact probe to achieve nanometer scale spots. The probe with bowtie-shaped aperture array adopts spring hinge and beam deflection method (BDM) to realize near-field lithography. Lithography results show that a macroscopical plasmonic contact probe can achieve a patterning resolution of around 75 nm at 365 nm wavelength, and demonstrate that the lithography system is promising for practical applications due to beyond the diffraction limit, low cost, and simplification of system configuration. CST calculations provide a guide for the design of recording structure and the arrangement of placing polarizer.

Physical Limitations in Lithography for Microelectronics.

ERIC Educational Resources Information Center

Flavin, P. G.

1981-01-01

Describes techniques being used in the production of microelectronics kits which have replaced traditional optical lithography, including contact and optical projection printing, and X-ray and electron beam lithography. Also includes limitations of each technique described. (SK)

Polymer based tunneling sensor

NASA Technical Reports Server (NTRS)

Wang, Jing (Inventor); Zhao, Yongjun (Inventor); Cui, Tianhong (Inventor)

2006-01-01

A process for fabricating a polymer based circuit by the following steps. A mold of a design is formed through a lithography process. The design is transferred to a polymer substrate through a hot embossing process. A metal layer is then deposited over at least part of said design and at least one electrical lead is connected to said metal layer.

Fabrication of functional devices using soft lithography and unconventional micropatterning

NASA Astrophysics Data System (ADS)

Deng, Tao

In this thesis, I present part of our work in the fabrication of functional devices using soft lithography, and also describe unconventional micropatterning techniques involving photographic films. Soft lithography is a set of techniques that are complementary to photolithography, but not limited to planar patterning. It offers the capability of generating micro and nanostructures to a larger community than that familiar with conventional fabrication facilities. The first part of this thesis (chapter 1--4) focuses on the fabrication of microelectronic and micromagnetic devices. These successful demonstrations establish the compatibility of soft lithography with multilayer fabrication of functional devices, and open the door for the further development in these areas. Chapter 1 and 2 describe the use of microtransfer molding (muTM), micromolding in capillaries (MIMIC), and microcontact (muCP) for fabricating Schottky diodes and half-wave rectifier circuits. The fabrication processes involve multiple soft lithography steps and address the registrations between different layer of structures. Room temperature characteristics of these devices resemble those of diodes and rectifiers fabricated by photolithography. Chapter 3 and 4 demonstrate the fabrication of micromagnetic systems. In chapter 3, a one-dimensional bead motor is reported. Based on current-carrying wire systems, the bead motor can trap and transfer magnetic beads suspended in aqueous solutions. Chapter 4 shows a microfiltration system that uses arrays of nickel posts positioned in a polydimethylsiloxane (PDMS) microfluidic channel as the filtering elements. Turning on or off the magnetic field that is localized by these nickel posts can trap or release magnetic beads flowing by. The second part of this thesis (chapter 5--7) focuses on the development of unconventional microfabrication. The major objective underlying this work is to explore the simplest and most broadly available techniques that we could identify for forming patterns with features useful in functional microstructures. Chapter 5 and 6 describe the use of photographic films (microfiche and slide film) and transparencies printed using different printers as photomasks in the fabrication of PDMS stamps/molds for soft lithography. In chapter 6, we also compare different methods of generating microstructures using facilities readily and inexpensively available to chemistry and biology laboratories. Among the films and transparencies investigated, microfiche carries the highest resolution. It can generate structures as small as ˜10 mum in lateral dimensions. Chapter 7 shows a new rapid prototyping process for the fabrication of metallic microstructures using silver halide-based photographic film. The whole process, which involves photographic development and electrochemical deposition, only takes ˜2 hours, starting from a computer design file. It can generate electrically continuous structures with the smallest dimension of ˜30 mum in the plane of the film. The resulting structures---either supported on the film backing, or freed from it---are appropriate for use as passive, structural materials such as wire frames or meshes, and can also be used in microfluidic, microanalytical, and microelectromechanical systems (MEMS).

Clean solutions to the incoming wafer quality impact on lithography process yield limits in a dynamic copper/low-k research and development environment

NASA Astrophysics Data System (ADS)

Lysaght, Patrick S.; Ybarra, Israel; Sax, Harry; Gupta, Gaurav; West, Michael; Doros, Theodore G.; Beach, James V.; Mello, Jim

2000-06-01

The continued growth of the semiconductor manufacturing industry has been due, in large part, to improved lithographic resolution and overlay across increasingly larger chip areas. Optical lithography continues to be the mainstream technology for the industry with extensions of optical lithography being employed to support 180 nm product and process development. While the industry momentum is behind optical extensions to 130 nm, the key challenge will be maintaining an adequate and affordable process latitude (depth of focus/exposure window) necessary for 10% post-etch critical dimension (CD) control. If the full potential of optical lithography is to be exploited, the current lithographic systems can not be compromised by incoming wafer quality. Impurity specifications of novel Low-k dielectric materials, plating solutions, chemical-mechanical planarization (CMP) slurries, and chemical vapor deposition (CVD) precursors are not well understood and more stringent control measures will be required to meet defect density targets as identified in the National Technology Roadmap for Semiconductors (NTRS). This paper identifies several specific poor quality wafer issues that have been effectively addressed as a result of the introduction of a set of flexible and reliable wafer back surface clean processes developed on the SEZ Spin-Processor 203 configured for processing of 200 mm diameter wafers. Patterned wafers have been back surface etched by means of a novel spin process contamination elimination (SpCE) technique with the wafer suspended by a dynamic nitrogen (N2) flow, device side down, via the Bernoulli effect. Figure 1 illustrates the wafer-chuck orientation within the process chamber during back side etch processing. This paper addresses a number of direct and immediate benefits to the MicraScan IIITM deep-ultraviolet (DUV) step-and-scan system at SEMATECH. These enhancements have resulted from the resolution of three significant problems: (1) back surface particle/residual contamination, (2) wafer flatness, and (3) control of contaminant materials such as copper (Cu). Data associated with the SpCE process, optimized for flatness improvement, particle removal, and Cu contamination control is presented in this paper, as it relates to excessive consumption of the usable depth of focus (UDOF) and comprehensive yield enhancement in photolithography. Additionally, data illustrating a highly effective means of eliminating copper from the wafer backside, bevel/edge, and frontside edge exclusion zone (0.5 mm - 3 mm), is presented. The data, obtained within the framework of standard and experimental copper/low-k device production at SEMATECH, quantifies the benefits of implementing the SEZ SpCE clean operation. Furthermore, this data confirms the feasibility of utilizing existing (non-copper) process equipment in conjunction with the development of copper applications by verifying the reliability and cost effectiveness of SpCE functionality.

Monolithic microfabricated valves and pumps by multilayer soft lithography.

PubMed

Unger, M A; Chou, H P; Thorsen, T; Scherer, A; Quake, S R

2000-04-07

Soft lithography is an alternative to silicon-based micromachining that uses replica molding of nontraditional elastomeric materials to fabricate stamps and microfluidic channels. We describe here an extension to the soft lithography paradigm, multilayer soft lithography, with which devices consisting of multiple layers may be fabricated from soft materials. We used this technique to build active microfluidic systems containing on-off valves, switching valves, and pumps entirely out of elastomer. The softness of these materials allows the device areas to be reduced by more than two orders of magnitude compared with silicon-based devices. The other advantages of soft lithography, such as rapid prototyping, ease of fabrication, and biocompatibility, are retained.

Progress in coherent lithography using table-top extreme ultraviolet lasers

NASA Astrophysics Data System (ADS)

Li, Wei

Nanotechnology has drawn a wide variety of attention as interesting phenomena occurs when the dimension of the structures is in the nanometer scale. The particular characteristics of nanoscale structures had enabled new applications in different fields in science and technology. Our capability to fabricate these nanostructures routinely for sure will impact the advancement of nanoscience. Apart from the high volume manufacturing in semiconductor industry, a small-scale but reliable nanofabrication tool can dramatically help the research in the field of nanotechnology. This dissertation describes alternative extreme ultraviolet (EUV) lithography techniques which combine table-top EUV laser and various cost-effective imaging strategies. For each technique, numerical simulations, system design, experiment result and its analysis will be presented. In chapter II, a brief review of the main characteristics of table-top EUV lasers will be addressed concentrating on its high power and large coherence radius that enable the lithography application described herein. The development of a Talbot EUV lithography system which is capable of printing 50nm half pitch nanopatterns will be illustrated in chapter III. A detailed discussion of its resolution limit will be presented followed by the development of X-Y-Z positioning stage, the fabrication protocol for diffractive EUV mask, and the pattern transfer using self- developed ion beam etching, and the dose control unit. In addition, this dissertation demonstrated the capability to fabricate functional periodic nanostructures using Talbot EUV lithography. After that, resolution enhancement techniques like multiple exposure, displacement Talbot EUV lithography, fractional Talbot EUV lithography, and Talbot lithography using 18.9nm amplified spontaneous emission laser will be demonstrated. Chapter IV will describe a hybrid EUV lithography which combines the Talbot imaging and interference lithography rendering a high resolution interference pattern whose lattice is modified by a custom designed Talbot mask. In other words, this method enables filling the arbitrary Talbot cell with ultra-fine interference nanofeatures. Detailed optics modeling, system design and experiment results using He-Ne laser and table top EUV laser are included. The last part of chapter IV will analyze its exclusive advantages over traditional Talbot or interference lithography.

UDOF direct improvement by modulating mask absorber thickness

NASA Astrophysics Data System (ADS)

Yu, Tuan-Yen; Lio, En Chuan; Chen, Po Tsang; Wei, Chih I.; Chen, Yi Ting; Peng, Ming Chun; Chou, William; Yu, Chun Chi

2016-10-01

As the process generation migrate to advanced and smaller dimension or pitch, the mask and resist 3D effects will impact the lithography focus common window severely because of both individual depth-of-focus (iDOF) range decrease and center mismatch. Furthermore, some chemical or thermal factors, such as PEB (Post Exposure Bake) also worsen the usable depth-of-focus (uDOF) performance. So the mismatch of thru-pitch iDOF center should be considered as a lithography process integration issue, and more complicated to partition the 3D effects induced by optical or chemical factors. In order to reduce the impact of 3D effects induced by both optical and chemical issues, and improve iDOF center mismatch, we would like to propose a mask absorber thickness offset approach, which is directly to compensate the iDOF center bias by adjusting mask absorber thickness, for iso, semi-iso or dense characteristics in line, space or via patterns to enlarge common process window, i.e uDOF, which intends to provide similar application as Flexwave[1] (ASML trademark). By the way, since mask absorber thickness offset approach is similar to focus tuning or change on wafer lithography process, it could be acted as the process tuning method of photoresist (PR) profile optimization locally, PR scum improvement in specific patterns or to modulate etching bias to meet process integration request. For mass production consideration, and available material, current att-PSM blank, quartz, MoSi with chrome layer as hard-mask in reticle process, will be implemented in this experiment, i.e. chrome will be kept remaining above partial thru-pitch patterns, and act as the absorber thickness bias in different patterns. And then, from the best focus offset of thru-pitch patterns, the iDOF center shifts could be directly corrected and to enlarge uDOF by increasing the overlap of iDOF. Finally, some negative tone development (NTD) result in line patterns will be demonstrated as well.

Challenges and requirements of mask data processing for multi-beam mask writer

NASA Astrophysics Data System (ADS)

Choi, Jin; Lee, Dong Hyun; Park, Sinjeung; Lee, SookHyun; Tamamushi, Shuichi; Shin, In Kyun; Jeon, Chan Uk

2015-07-01

To overcome the resolution and throughput of current mask writer for advanced lithography technologies, the platform of e-beam writer have been evolved by the developments of hardware and software in writer. Especially, aggressive optical proximity correction (OPC) for unprecedented extension of optical lithography and the needs of low sensitivity resist for high resolution result in the limit of variable shaped beam writer which is widely used for mass production. The multi-beam mask writer is attractive candidate for photomask writing of sub-10nm device because of its high speed and the large degree of freedom which enable high dose and dose modulation for each pixel. However, the higher dose and almost unlimited appetite for dose modulation challenge the mask data processing (MDP) in aspects of extreme data volume and correction method. Here, we discuss the requirements of mask data processing for multi-beam mask writer and presents new challenges of the data format, data flow, and correction method for user and supplier MDP tool.

The influence of grating shape formation fluctuation on DFB laser diode threshold condition

NASA Astrophysics Data System (ADS)

Bao, Shiwei; Song, Qinghai; Xie, Chunmei

2018-03-01

Not only the grating material refractive index itself but also the Bragg grating physical shape formation affects the coupling strength greatly. The Bragg grating shape includes three factors, namely grating depth, duty ratio and grating angle. During the lithography and wet etching process, there always will be some fluctuation between the target and real grating shape formation after fabrication process. This grating shape fluctuation will affect the DFB coupling coefficient κ , and then consequently threshold current and corresponding wavelength. This paper studied the grating shape formation fluctuation influence to improve the DFB fabrication yield. A truncated normal random distribution fluctuation is considered in this paper. The simulation results conclude that it is better to choose relative thicker grating depth with lower refractive index to obtain a better fabrication tolerance, while not quite necessary to spend too much effort on improving lithography and wet etching process to get a precisely grating duty ratio and grating angle.

Design and implementation of a cloud based lithography illumination pupil processing application

NASA Astrophysics Data System (ADS)

Zhang, Youbao; Ma, Xinghua; Zhu, Jing; Zhang, Fang; Huang, Huijie

2017-02-01

Pupil parameters are important parameters to evaluate the quality of lithography illumination system. In this paper, a cloud based full-featured pupil processing application is implemented. A web browser is used for the UI (User Interface), the websocket protocol and JSON format are used for the communication between the client and the server, and the computing part is implemented in the server side, where the application integrated a variety of high quality professional libraries, such as image processing libraries libvips and ImageMagic, automatic reporting system latex, etc., to support the program. The cloud based framework takes advantage of server's superior computing power and rich software collections, and the program could run anywhere there is a modern browser due to its web UI design. Compared to the traditional way of software operation model: purchased, licensed, shipped, downloaded, installed, maintained, and upgraded, the new cloud based approach, which is no installation, easy to use and maintenance, opens up a new way. Cloud based application probably is the future of the software development.

The influence of grating shape formation fluctuation on DFB laser diode threshold condition

NASA Astrophysics Data System (ADS)

Bao, Shiwei; Song, Qinghai; Xie, Chunmei

2018-06-01

Not only the grating material refractive index itself but also the Bragg grating physical shape formation affects the coupling strength greatly. The Bragg grating shape includes three factors, namely grating depth, duty ratio and grating angle. During the lithography and wet etching process, there always will be some fluctuation between the target and real grating shape formation after fabrication process. This grating shape fluctuation will affect the DFB coupling coefficient κ, and then consequently threshold current and corresponding wavelength. This paper studied the grating shape formation fluctuation influence to improve the DFB fabrication yield. A truncated normal random distribution fluctuation is considered in this paper. The simulation results conclude that it is better to choose relative thicker grating depth with lower refractive index to obtain a better fabrication tolerance, while not quite necessary to spend too much effort on improving lithography and wet etching process to get a precisely grating duty ratio and grating angle.

Pattern Inspection of EUV Masks Using DUV Light

NASA Astrophysics Data System (ADS)

Liang, Ted; Tejnil, Edita; Stivers, Alan R.

2002-12-01

Inspection of extreme ultraviolet (EUV) lithography masks requires reflected light and this poses special challenges for inspection tool suppliers as well as for mask makers. Inspection must detect all the printable defects in the absorber pattern as well as printable process-related defects. Progress has been made under the NIST ATP project on "Intelligent Mask Inspection Systems for Next Generation Lithography" in assessing the factors that impact the inspection tool sensitivity. We report in this paper the inspection of EUV masks with programmed absorber defects using 257nm light. All the materials of interests for masks are highly absorptive to EUV light as compared to deep ultraviolet (DUV) light. Residues and contamination from mask fabrication process and handling are prone to be printable. Therefore, it is critical to understand their EUV printability and optical inspectability. Process related defects may include residual buffer layer such as oxide, organic contaminants and possible over-etch to the multilayer surface. Both simulation and experimental results will be presented in this paper.

High Quality 3D Photonics using Nano Imprint Lithography of Fast Sol-gel Materials.

PubMed

Bar-On, Ofer; Brenner, Philipp; Siegle, Tobias; Gvishi, Raz; Kalt, Heinz; Lemmer, Uli; Scheuer, Jacob

2018-05-18

A method for the realization of low-loss integrated optical components is proposed and demonstrated. This approach is simple, fast, inexpensive, scalable for mass production, and compatible with both 2D and 3D geometries. The process is based on a novel dual-step soft nano imprint lithography process for producing devices with smooth surfaces, combined with fast sol-gel technology providing highly transparent materials. As a concrete example, this approach is demonstrated on a micro ring resonator made by direct laser writing (DLW) to achieve a quality factor improvement from one hundred thousand to more than 3 million. To the best of our knowledge this also sets a Q-factor record for UV-curable integrated micro-ring resonators. The process supports the integration of many types of materials such as light-emitting, electro-optic, piezo-electric, and can be readily applied to a wide variety of devices such as waveguides, lenses, diffractive elements and more.

MAPPER: high-throughput maskless lithography

NASA Astrophysics Data System (ADS)

Wieland, M. J.; de Boer, G.; ten Berge, G. F.; Jager, R.; van de Peut, T.; Peijster, J. J. M.; Slot, E.; Steenbrink, S. W. H. K.; Teepen, T. F.; van Veen, A. H. V.; Kampherbeek, B. J.

2009-03-01

Maskless electron beam lithography, or electron beam direct write, has been around for a long time in the semiconductor industry and was pioneered from the mid-1960s onwards. This technique has been used for mask writing applications as well as device engineering and in some cases chip manufacturing. However because of its relatively low throughput compared to optical lithography, electron beam lithography has never been the mainstream lithography technology. To extend optical lithography double patterning, as a bridging technology, and EUV lithography are currently explored. Irrespective of the technical viability of both approaches, one thing seems clear. They will be expensive [1]. MAPPER Lithography is developing a maskless lithography technology based on massively-parallel electron-beam writing with high speed optical data transport for switching the electron beams. In this way optical columns can be made with a throughput of 10-20 wafers per hour. By clustering several of these columns together high throughputs can be realized in a small footprint. This enables a highly cost-competitive alternative to double patterning and EUV alternatives. In 2007 MAPPER obtained its Proof of Lithography milestone by exposing in its Demonstrator 45 nm half pitch structures with 110 electron beams in parallel, where all the beams where individually switched on and off [2]. In 2008 MAPPER has taken a next step in its development by building several tools. The objective of building these tools is to involve semiconductor companies to be able to verify tool performance in their own environment. To enable this, the tools will have a 300 mm wafer stage in addition to a 110-beam optics column. First exposures at 45 nm half pitch resolution have been performed and analyzed. On the same wafer it is observed that all beams print and based on analysis of 11 beams the CD for the different patterns is within 2.2 nm from target and the CD uniformity for the different patterns is better than 2.8 nm.

High-Tc superconducting microbolometer for terahertz applications

NASA Astrophysics Data System (ADS)

Ulysse, C.; Gaugue, A.; Adam, A.; Kreisler, A. J.; Villégier, J.-C.; Thomassin, J.-L.

2002-05-01

Superconducting hot electron bolometer mixers are now a competitive alternative to Schottky diode mixers in the terahertz frequency range because of their ultra wideband (from millimeter waves to visible light), high conversion gain, and low intrinsic noise level. High Tc superconductor materials can be used to make hot electron bolometers and present some advantage in term of operating temperature and cooling. In this paper, we present first a model for the study of superconducting hot electron bolometers responsivity in direct detection mode, in order to establish a firm basis for the design of future THz mixers. Secondly, an original process to realize YBaCuO hot electron bolometer mixers will be described. Submicron YBaCuO superconducting structures are expitaxially sputter deposited on MgO substrates and patterned by using electron beam lithography in combination with optical lithography. Metal masks achieved by electron beam lithography are insuring a good bridge definition and protection during ion etching. Finally, detection experiments are being performed with a laser at 850 nm wavelength, in homodyne mode in order to prove the feasibility and potential performances of these devices.

Nanopatterning on calixarene thin films via low-energy field-emission scanning probe lithography.

PubMed

He, Xiaoyue; Li, Peng; Liu, Pengchong; Zhang, Xiaoxian; Zhou, Xiangqian; Liu, Wei; Qiu, Xiaohui

2018-08-10

Field-emitted, low-energy electrons from the conducting tip of an atomic force microscope were adopted for nanolithography on calixarene ultrathin films coated on silicon wafers. A structural evolution from protrusion to depression down to a 30 nm spatial resolution was reproducibly obtained by tuning the sample voltage and exposure current in the lithography process. Close analyses of the profiles showed that the nanostructures formed by a single exposure with a high current are almost identical to those created by cumulative exposure with a lower current but an equal number of injected electrons. Surface potential imaging by Kelvin probe force microscopy found a negatively charged region surrounding the groove structures once the structures were formed. We conclude that the mechanism related to the formation of a temporary negative state and molecule decomposition, rather than thermal ablation, is responsible for the low-energy field-emission electron lithography on a calixarene molecular resist. We hope that our elucidation of the underlying mechanism is helpful for molecular resist design and further improving the reproducibility and throughput of nanolithography.

High Throughput Optical Lithography by Scanning a Massive Array of Bowtie Aperture Antennas at Near-Field

DTIC Science & Technology

2015-11-03

scale optical projection system powered by spatial light modulators, such as digital micro-mirror device ( DMD ). Figure 4 shows the parallel lithography ...1Scientific RepoRts | 5:16192 | DOi: 10.1038/srep16192 www.nature.com/scientificreports High throughput optical lithography by scanning a massive...array of bowtie aperture antennas at near-field X. Wen1,2,3,*, A. Datta1,*, L. M. Traverso1, L. Pan1, X. Xu1 & E. E. Moon4 Optical lithography , the

Sub-100nm, Maskless Deep-UV Zone-Plate Array Lithography

DTIC Science & Technology

2004-05-07

The basic idea is to use fiducial grids, fabricated using interference lithography (or a derivative thereof) to determine the placement of features...sensed, and corrections are fed back to the beam-control electronics to cancel errors in the beam’s position. The virtue of interference lithography ...Sub-100nm, Maskless Deep-UV Zone-Plate Array Lithography Project Period: March 1, 2001 – February 28, 2004 F i n a l R e p o r t Army Research

Investigation of electron beam lithography effects on metal-insulator transition behavior of vanadium dioxide

NASA Astrophysics Data System (ADS)

Yuce, H.; Alaboz, H.; Demirhan, Y.; Ozdemir, M.; Ozyuzer, L.; Aygun, G.

2017-11-01

Vanadium dioxide (VO2) shows metal-insulator phase transition at nearly 68 °C. This metal-insulator transition (MIT) in VO2 leads to a significant change in near-infrared transmittance and an abrupt change in the resistivity of VO2. Due to these characteristics, VO2 plays an important role on optic and electronic devices, such as thermochromic windows, meta-materials with tunable frequency, uncooled bolometers and switching devices. In this work, VO2 thin films were fabricated by reactive direct current magnetron sputtering in O2/Ar atmosphere on sapphire substrates without any further post annealing processes. The effect of sputtering parameters on optical characteristics and structural properties of grown thin films was investigated by SEM, XRD, Raman and UV/VIS spectrophotometer measurements. Patterning process of VO2 thin films was realized by e-beam lithography technique to monitor the temperature dependent electrical characterization. Electrical properties of VO2 samples were characterized using microprobe station in a vacuum system. MIT with hysteresis behavior was observed for the unpatterned square samples at around 68 °C. By four orders of magnitude of resistivity change was measured for the deposited VO2 thin films at transition temperature. After e-beam lithography process, substantial results in patterned VO2 thin films were observed. In this stage, for patterned VO2 thin films as stripes, the change in resistivity of VO2 was reduced by a factor of 10. As a consequence of electrical resistivity measurements, MIT temperature was shifted from 68 °C to 50 °C. The influence of e-beam process on the properties of VO2 thin films and the mechanism of the effects are discussed. The presented results contribute to the achievement of VO2 based thermochromic windows and bolometer applications.

Lead zirconate titanate nanoscale patterning by ultraviolet-based lithography lift-off technique for nano-electromechanical system applications.

PubMed

Guillon, Samuel; Saya, Daisuke; Mazenq, Laurent; Costecalde, Jean; Rèmiens, Denis; Soyer, Caroline; Nicu, Liviu

2012-09-01

The advantage of using lead zirconate titanate (PbZr(0.54)Ti(0.46)O(3)) ceramics as an active material in nanoelectromechanical systems (NEMS) comes from its relatively high piezoelectric coefficients. However, its integration within a technological process is limited by the difficulty of structuring this material with submicrometer resolution at the wafer scale. In this work, we develop a specific patterning method based on optical lithography coupled with a dual-layer resist process. The main objective is to obtain sub-micrometer features by lifting off a 100-nm-thick PZT layer while preserving the material's piezoelectric properties. A subsequent result of the developed method is the ability to stack several layers with a lateral resolution of few tens of nanometers, which is mandatory for the fabrication of NEMS with integrated actuation and read-out capabilities.

Side-wall spacer passivated sub-μm Josephson junction fabrication process

NASA Astrophysics Data System (ADS)

Grönberg, Leif; Kiviranta, Mikko; Vesterinen, Visa; Lehtinen, Janne; Simbierowicz, Slawomir; Luomahaara, Juho; Prunnila, Mika; Hassel, Juha

2017-12-01

We present a structure and a fabrication method for superconducting tunnel junctions down to the dimensions of 200 nm using i-line UV lithography. The key element is a sidewall-passivating spacer structure (SWAPS) which is shaped for smooth crossline contacting and low parasitic capacitance. The SWAPS structure enables formation of junctions with dimensions at or below the lithography-limited linewidth. An additional benefit is avoiding the excessive use of amorphous dielectric materials which is favorable in sub-Kelvin microwave applications often plagued by nonlinear and lossy dielectrics. We apply the structure to niobium trilayer junctions, and provide characterization results yielding evidence on wafer-scale scalability, and critical current density tuning in the range of 0.1-3.0 kA cm-2. We discuss the applicability of the junction process in the context of different applications, such as SQUID magnetometers and Josephson parametric amplifiers.

The line roughness improvement with plasma coating and cure treatment for 193nm lithography and beyond

NASA Astrophysics Data System (ADS)

Zheng, Erhu; Huang, Yi; Zhang, Haiyang

2017-03-01

As CMOS technology reaches 14nm node and beyond, one of the key challenges of the extension of 193nm immersion lithography is how to control the line edge and width roughness (LER/LWR). For Self-aligned Multiple Patterning (SaMP), LER becomes larger while LWR becomes smaller as the process proceeds[1]. It means plasma etch process becomes more and more dominant for LER reduction. In this work, we mainly focus on the core etch solution including an extra plasma coating process introduced before the bottom anti reflective coating (BARC) open step, and an extra plasma cure process applied right after BARC-open step. Firstly, we leveraged the optimal design experiment (ODE) to investigate the impact of plasma coating step on LER and identified the optimal condition. ODE is an appropriate method for the screening experiments of non-linear parameters in dynamic process models, especially for high-cost-intensive industry [2]. Finally, we obtained the proper plasma coating treatment condition that has been proven to achieve 32% LER improvement compared with standard process. Furthermore, the plasma cure scheme has been also optimized with ODE method to cover the LWR degradation induced by plasma coating treatment.

Method for the fabrication of three-dimensional microstructures by deep X-ray lithography

DOEpatents

Sweatt, William C.; Christenson, Todd R.

2005-04-05

A method for the fabrication of three-dimensional microstructures by deep X-ray lithography (DXRL) comprises a masking process that uses a patterned mask with inclined mask holes and off-normal exposures with a DXRL beam aligned with the inclined mask holes. Microstructural features that are oriented in different directions can be obtained by using multiple off-normal exposures through additional mask holes having different orientations. Various methods can be used to block the non-aligned mask holes from the beam when using multiple exposures. A method for fabricating a precision 3D X-ray mask comprises forming an intermediate mask and a master mask on a common support membrane.

Accurate lithography simulation model based on convolutional neural networks

NASA Astrophysics Data System (ADS)

Watanabe, Yuki; Kimura, Taiki; Matsunawa, Tetsuaki; Nojima, Shigeki

2017-07-01

Lithography simulation is an essential technique for today's semiconductor manufacturing process. In order to calculate an entire chip in realistic time, compact resist model is commonly used. The model is established for faster calculation. To have accurate compact resist model, it is necessary to fix a complicated non-linear model function. However, it is difficult to decide an appropriate function manually because there are many options. This paper proposes a new compact resist model using CNN (Convolutional Neural Networks) which is one of deep learning techniques. CNN model makes it possible to determine an appropriate model function and achieve accurate simulation. Experimental results show CNN model can reduce CD prediction errors by 70% compared with the conventional model.

Fabrication of frequency selective surface for band stop IR-filter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mishra, Akshita, E-mail: akshitamishra27@gmail.com; Sudheer,; Tiwari, P.

2016-05-23

Fabrication and characterization of frequency selective surfaces (FSS) on silicon dioxide/ silicon is reported. Electron beam lithography based techniques are used for the fabrication of periodic slot structure in tungsten layer on silicon dioxide/silicon. The fabrication process consists of growth of SiO{sub 2} on silicon, tungsten deposition, electron beam lithography, and wet etching of tungsten. The optical characterization of the structural pattern was carried out using fourier transform infrared spectroscopy (FTIR). The reflectance spectra clearly show a resonance peak at 9.09 µm in the mid infrared region. This indicates that the patterned surface acts as band stop filter in the mid-infraredmore » region.« less

The effects of the bottom anti-reflective coating with different baked temperatures and thicknesses on nanoscale patterns

NASA Astrophysics Data System (ADS)

Zheng, Jie; Li, Ling; Chen, Weidong

2015-12-01

The bottom anti-reflective coating (BARC) material can enhance the resolution of the nanopatterns structures in laser interference lithography process. In this study, WIDE-B ARC material was investigated to confirm the reduction of the vertical standing wave which leads to defect of nanopatterns. And the critical dimension (CD) of 100 nm L/S patterns with and without the application of BARC material was fabricated by laser interference lithography technology. The compared results showed that BARC can effectively reduce CD swing and obtain more uniform nanopatterns. Meanwhile, we also verified the influence of cured temperature and film thickness of BARC on the uniformity of nanopatterns.

Fabrication of Silicon Nanobelts and Nanopillars by Soft Lithography for Hydrophobic and Hydrophilic Photonic Surfaces.

PubMed

Baquedano, Estela; Martinez, Ramses V; Llorens, José M; Postigo, Pablo A

2017-05-11

Soft lithography allows for the simple and low-cost fabrication of nanopatterns with different shapes and sizes over large areas. However, the resolution and the aspect ratio of the nanostructures fabricated by soft lithography are limited by the depth and the physical properties of the stamp. In this work, silicon nanobelts and nanostructures were achieved by combining soft nanolithography patterning with optimized reactive ion etching (RIE) in silicon. Using polymethylmethacrylate (PMMA) nanopatterned layers with thicknesses ranging between 14 and 50 nm, we obtained silicon nanobelts in areas of square centimeters with aspect ratios up to ~1.6 and linewidths of 225 nm. The soft lithographic process was assisted by a thin film of SiO x (less than 15 nm) used as a hard mask and RIE. This simple patterning method was also used to fabricate 2D nanostructures (nanopillars) with aspect ratios of ~2.7 and diameters of ~200 nm. We demonstrate that large areas patterned with silicon nanobelts exhibit a high reflectivity peak in the ultraviolet C (UVC) spectral region (280 nm) where some aminoacids and peptides have a strong absorption. We also demonstrated how to tailor the aspect ratio and the wettability of these photonic surfaces (contact angles ranging from 8.1 to 96.2°) by changing the RIE power applied during the fabrication process.

Moore's law, lithography, and how optics drive the semiconductor industry

NASA Astrophysics Data System (ADS)

Hutcheson, G. Dan

2018-03-01

When the subject of Moore's Law arises, the important role that lithography plays and how advances in optics have made it all possible is seldom brought up in the world outside of lithography itself. When lithography is mentioned up in the value chain, it's often a critique of how advances are coming too slow and getting far too expensive. Yet advances in lithography are at the core of how Moore's Law is viable. This presentation lays out how technology and the economics of optics in manufacturing interleave to drive the immense value that semiconductors have brought to the world by making it smarter. Continuing these advances will be critical as electronics make the move from smart to cognitive.

Availability of underlayer application to EUV process

NASA Astrophysics Data System (ADS)

Kosugi, Hitoshi; Fonseca, Carlos; Iwao, Fumiko; Marumoto, Hiroshi; Kim, Hyun-Woo; Cho, Kyoungyong; Park, Cheol-Hong; Park, Chang-Min; Na, Hai-Sub; Koh, Cha-Won; Cho, Hanku

2011-04-01

EUV lithography is one of the most promising technologies for the fabrication of beyond 30nm HP generation devices. However, it is well-known that EUV lithography still has significant challenges. A great concern is the change of resist material for EUV resist process. EUV resist material formulations will likely change from conventional-type materials. As a result, substrate dependency needs to be understood. TEL has reported that the simulation combined with experiments is a good way to confirm the substrate dependency. In this work the application of HMDS treatment and SiON introduction, as an underlayer, are studied to cause a footing of resist profile. Then, we applied this simulation technique to Samsung EUV process. We will report the benefit of this simulation work and effect of underlayer application. Regarding the etching process, underlayer film introduction could have significant issues because the film that should be etched off increases. For that purpose, thinner films are better for etching. In general, thinner films may have some coating defects. We will report the coating coverage performance and defectivity of ultra thin film coating.

Lithography with MeV Energy Ions for Biomedical Applications: Accelerator Considerations

NASA Astrophysics Data System (ADS)

Sangyuenyongpipat, S.; Whitlow, H. J.; Nakagawa, S. T.; Yoshida, E.

2009-03-01

MeV ion beam lithographies are very powerful techniques for 3D direct writing in positive or negtive photoresist materials. Nanometer-scale rough structures, or clear areas with straight vertical sidewalls as thin as a few 10's of nm in a resist of a few nm to 100 μm thickness can be made. These capabilities are particularly useful for lithography in cellular- and sub-cellular level biomedical research and technology applications. It can be used for tailor making special structures such as optical waveguides, biosensors, DNA sorters, spotting plates, systems for DNA, protein and cell separation, special cell-growth substrates and microfluidic lab-on-a-chip devices. Furthermore MeV ion beam lithography can be used for rapid prototyping, and also making master stamps and moulds for mass production by hot embossing and nanoimprint lithography. The accelerator requirements for three different high energy ion beam lithography techniques are overviewed. We consider the special requirements placed on the accelerator and how this is achieved for a commercial proton beam writing tool.

Micro-bridge defects: characterization and root cause analysis

NASA Astrophysics Data System (ADS)

Santoro, Gaetano; Van den Heuvel, Dieter; Braggin, Jennifer; Rosslee, Craig; Leray, Philippe J.; Cheng, Shaunee; Jehoul, Christiane; Schreutelkamp, Robert; Hillel, Noam

2010-03-01

Defect review of advanced lithography processes is becoming more and more challenging as feature sizes decrease. Previous studies using a defect review SEM on immersion lithography generated wafers have resulted in a defect classification scheme which, among others, includes a category for micro-bridges. Micro-bridges are small connections between two adjacent lines in photo-resist and are considered device killing defects. Micro-bridge rates also tend to increase as feature sizes decrease, making them even more important for the next technology nodes. Especially because micro-bridge defects can originate from different root causes, the need to further refine and split up the classification of this type of defect into sub groups may become a necessity. This paper focuses on finding the correlation of the different types of micro-bridge defects to a particular root cause based on a full characterization and root cause analysis of this class of defects, by using advanced SEM review capabilities like high quality imaging in very low FOV, Multi Perspective SEM Imaging (MPSI), tilted column and rotated stage (Tilt&Rotation) imaging and Focused Ion Beam (FIB) cross sectioning. Immersion lithography material has been mainly used to generate the set of data presented in this work even though, in the last part of the results, some EUV lithography data will be presented as part of the continuing effort to extend the micro-bridge defect characterization to the EUV technology on 40 nm technology node and beyond.

State-of-the-art Nanofabrication in Catalysis.

PubMed

Karim, Waiz; Tschupp, Simon A; Herranz, Juan; Schmidt, Thomas J; Ekinci, Yasin; van Bokhovenac, Jeroen A

2017-04-26

We present recent developments in top-down nanofabrication that have found application in catalysis research. To unravel the complexity of catalytic systems, the design and use of models with control of size, morphology, shape and inter-particle distances is a necessity. The study of well-defined and ordered nanoparticles on a support contributes to the understanding of complex phenomena that govern reactions in heterogeneous and electro-catalysis. We review the strengths and limitations of different nanolithography methods such as electron beam lithography (EBL), photolithography, extreme ultraviolet (EUV) lithography and colloidal lithography for the creation of such highly tunable catalytic model systems and their applications in catalysis. Innovative strategies have enabled particle sizes reaching dimensions below 10 nm. It is now possible to create pairs of particles with distance controlled with an extremely high precision in the order of one nanometer. We discuss our approach to study these model systems at the single-particle level using X-ray absorption spectroscopy and show new ways to fabricate arrays of single nanoparticles or nanoparticles in pairs over a large area using EBL and EUV-achromatic Talbot lithography. These advancements have provided new insights into the active sites in metal catalysts and enhanced the understanding of the role of inter-particle interactions and catalyst supports, such as in the phenomenon of hydrogen spillover. We present a perspective on future directions for employing top-down nanofabrication in heterogeneous and electrocatalysis. The rapid development in nanofabrication and characterization methods will continue to have an impact on understanding of complex catalytic processes.

Defect printability for high-exposure dose advanced packaging applications

NASA Astrophysics Data System (ADS)

Mikles, Max; Flack, Warren; Nguyen, Ha-Ai; Schurz, Dan

2003-12-01

Pellicles are used in semiconductor lithography to minimize printable defects and reduce reticle cleaning frequency. However, there are a growing number of microlithography applications, such as advanced packaging and nanotechnology, where it is not clear that pellicles always offer a significant benefit. These applications have relatively large critical dimensions and require ultra thick photoresists with extremely high exposure doses. Given that the lithography is performed in Class 100 cleanroom conditions, it is possible that the risk of defects from contamination is sufficiently low that pellicles would not be required on certain process layer reticles. The elimination of the pellicle requirement would provide a cost reduction by saving the original pellicle cost and eliminating future pellicle replacement and repair costs. This study examines the imaging potential of defects with reticle patterns and processes typical for gold-bump and solder-bump advanced packaging lithography. The test reticle consists of 30 to 90 μm octagonal contact patterns representative of advanced packaging reticles. Programmed defects are added that represent the range of particle sizes (3 to 30 μm) normally protected by the pellicle and that are typical of advanced packaging lithography cleanrooms. The reticle is exposed using an Ultratech Saturn Spectrum 300e2 1X stepper on wafers coated with a variety of ultra thick (30 to 100 μm) positive and negative-acting photoresists commonly used in advanced packaging. The experimental results show that in many cases smaller particles continue to be yield issues for the feature size and density typical of advanced packaging processes. For the two negative photoresists studied it appears that a pellicle is not required for protection from defects smaller than 10 to 15 μm depending on the photoresist thickness. Thus the decision on pellicle usage for these materials would need to be made based on the device fabrication process and the cleanliness of a fabrication facility. For the two positive photoresists studied it appears that a pellicle is required to protect from defects down to 3 μm defects depending on the photoresist thickness. This suggests that a pellicle should always be used for these materials. Since a typical fabrication facility would use both positive and negative photoresists it may be advantageous to use pellicles on all reticles simply to avoid confusion. The cost savings of not using a pellicle could easily be outweighed by the yield benefits of using one.

Laser Material Processing for Microengineering Applications

NASA Technical Reports Server (NTRS)

Helvajian, H.

1995-01-01

The processing of materials via laser irradiation is presented in a brief survey. Various techniques currently used in laser processing are outlined and the significance to the development of space qualified microinstrumentation are identified. In general the laser processing technique permits the transferring of patterns (i.e. lithography), machining (i.e. with nanometer precision), material deposition (e.g., metals, dielectrics), the removal of contaminants/debris/passivation layers and the ability to provide process control through spectroscopy.

The development of 8 inch roll-to-plate nanoimprint lithography (8-R2P-NIL) system

NASA Astrophysics Data System (ADS)

Lee, Lai Seng; Mohamed, Khairudin; Ooi, Su Guan

2017-07-01

Growth in semiconductor and integrated circuit industry was observed in the past decennium of years for industrial technology which followed Moore's law. The line width of nanostructure to be exposed was influenced by the essential technology of photolithography. Thus, it is crucial to have a low cost and high throughput manufacturing process for nanostructures. Nanoimprint Lithography technique invented by Stephen Y. Chou was considered as major nanolithography process to be used in future integrated circuit and integrated optics. The drawbacks of high imprint pressure, high imprint temperature, air bubbles formation, resist sticking to mold and low throughput of thermal nanoimprint lithography on silicon wafer have yet to be solved. Thus, the objectives of this work is to develop a high throughput, low imprint force, room temperature UV assisted 8 inch roll to plate nanoimprint lithography system capable of imprinting nanostructures on 200 mm silicon wafer using roller imprint with flexible mold. A piece of resist spin coated silicon wafer was placed onto vacuum chuck drives forward by a stepper motor. A quartz roller wrapped with a piece of transparent flexible mold was used as imprint roller. The imprinted nanostructures were cured by 10 W, 365 nm UV LED which situated inside the quartz roller. Heat generated by UV LED was dissipated by micro heat pipe. The flexible mold detaches from imprinted nanostructures in a 'line peeling' pattern and imprint pressure was measured by ultra-thin force sensors. This system has imprinting speed capability ranging from 0.19 mm/s to 5.65 mm/s, equivalent to imprinting capability of 3 to 20 pieces of 8 inch wafers per hour. Speed synchronization between imprint roller and vacuum chuck was achieved by controlling pulse rate supplied to stepper motor which drive the vacuum chuck. The speed different ranging from 2 nm/s to 98 nm/s is achievable. Vacuum chuck height was controlled by stepper motor with displacement of 5 nm/step.

Mask fabrication and its applications to extreme ultra-violet diffractive optics

NASA Astrophysics Data System (ADS)

Cheng, Yang-Chun

Short-wavelength radiation around 13nm of wavelength (Extreme Ultra-Violet, EUV) is being considered for patterning microcircuits, and other electronic chips with dimensions in the nanometer range. Interferometric Lithography (IL) uses two beams of radiation to form high-resolution interference fringes, as small as half the wavelength of the radiation used. As a preliminary step toward manufacturing technology, IL can be used to study the imaging properties of materials in a wide spectral range and at nanoscale dimensions. A simple implementation of IL uses two transmission diffraction gratings to form the interference pattern. More complex interference patterns can be created by using different types of transmission gratings. In this thesis, I describe the development of a EUV lithography system that uses diffractive optical elements (DOEs), from simple gratings to holographic structures. The exposure system is setup on a EUV undulator beamline at the Synchrotron Radiation Center, in the Center for NanoTechnology clean room. The setup of the EUV exposure system is relatively simple, while the design and fabrication of the DOE "mask" is complex, and relies on advanced nanofabrication techniques. The EUV interferometric lithography provides reliable EUV exposures of line/space patterns and is ideal for the development of EUV resist technology. In this thesis I explore the fabrication of these DOE for the EUV range, and discuss the processes I have developed for the fabrication of ultra-thin membranes. In addition, I discuss EUV holographic lithography and generalized Talbot imaging techniques to extend the capability of our EUV-IL system to pattern arbitrary shapes, using more coherent sources than the undulator. In a series of experiments, we have demonstrated the use of a soft X-ray (EUV) laser as effective source for EUV lithography. EUV-IL, as implemented at CNTech, is being used by several companies and research organizations to characterize photoresist materials.

Use of Sacrificial Nanoparticles to Remove the Effects of Shot-noise in Contact Holes Fabricated by E-beam Lithography.

PubMed

Rananavare, Shankar B; Morakinyo, Moshood K

2017-02-12

Nano-patterns fabricated with extreme ultraviolet (EUV) or electron-beam (E-beam) lithography exhibit unexpected variations in size. This variation has been attributed to statistical fluctuations in the number of photons/electrons arriving at a given nano-region arising from shot-noise (SN). The SN varies inversely to the square root of a number of photons/electrons. For a fixed dosage, the SN is larger in EUV and E-beam lithographies than for traditional (193 nm) optical lithography. Bottom-up and top-down patterning approaches are combined to minimize the effects of shot noise in nano-hole patterning. Specifically, an amino-silane surfactant self-assembles on a silicon wafer that is subsequently spin-coated with a 100 nm film of a PMMA-based E-beam photoresist. Exposure to the E-beam and the subsequent development uncover the underlying surfactant film at the bottoms of the holes. Dipping the wafer in a suspension of negatively charged, citrate-capped, 20 nm gold nanoparticles (GNP) deposits one particle per hole. The exposed positively charged surfactant film in the hole electrostatically funnels the negatively charged nanoparticle to the center of an exposed hole, which permanently fixes the positional registry. Next, by heating near the glass transition temperature of the photoresist polymer, the photoresist film reflows and engulfs the nanoparticles. This process erases the holes affected by SN but leaves the deposited GNPs locked in place by strong electrostatic binding. Treatment with oxygen plasma exposes the GNPs by etching a thin layer of the photoresist. Wet-etching the exposed GNPs with a solution of I2/KI yields uniform holes located at the center of indentations patterned by E-beam lithography. The experiments presented show that the approach reduces the variation in the size of the holes caused by SN from 35% to below 10%. The method extends the patterning limits of transistor contact holes to below 20 nm.

Lithography process for patterning HgI2 photonic devices

DOEpatents

Mescher, Mark J.; James, Ralph B.; Hermon, Haim

2004-11-23

A photolithographic process forms patterns on HgI.sub.2 surfaces and defines metal sublimation masks and electrodes to substantially improve device performance by increasing the realizable design space. Techniques for smoothing HgI.sub.2 surfaces and for producing trenches in HgI.sub.2 are provided. A sublimation process is described which produces etched-trench devices with enhanced electron-transport-only behavior.

Lossless compression techniques for maskless lithography data

NASA Astrophysics Data System (ADS)

Dai, Vito; Zakhor, Avideh

2002-07-01

Future lithography systems must produce more dense chips with smaller feature sizes, while maintaining the throughput of one wafer per sixty seconds per layer achieved by today's optical lithography systems. To achieve this throughput with a direct-write maskless lithography system, using 25 nm pixels for 50 nm feature sizes, requires data rates of about 10 Tb/s. In a previous paper, we presented an architecture which achieves this data rate contingent on consistent 25 to 1 compression of lithography data, and on implementation of a decoder-writer chip with a real-time decompressor fabricated on the same chip as the massively parallel array of lithography writers. In this paper, we examine the compression efficiency of a spectrum of techniques suitable for lithography data, including two industry standards JBIG and JPEG-LS, a wavelet based technique SPIHT, general file compression techniques ZIP and BZIP2, our own 2D-LZ technique, and a simple list-of-rectangles representation RECT. Layouts rasterized both to black-and-white pixels, and to 32 level gray pixels are considered. Based on compression efficiency, JBIG, ZIP, 2D-LZ, and BZIP2 are found to be strong candidates for application to maskless lithography data, in many cases far exceeding the required compression ratio of 25. To demonstrate the feasibility of implementing the decoder-writer chip, we consider the design of a hardware decoder based on ZIP, the simplest of the four candidate techniques. The basic algorithm behind ZIP compression is Lempel-Ziv 1977 (LZ77), and the design parameters of LZ77 decompression are optimized to minimize circuit usage while maintaining compression efficiency.

Pocket Pal: A Graphic Arts Digest for Printers and Advertising Production Managers. Tenth Edition.

ERIC Educational Resources Information Center

1970

In this digest of information about printing a brief survey of the history of printing precedes detailed explanations of the processes and the materials involved in printing. The four major printing processes--letterpress, gravure, offset lithography, and screen--are explained. Steps in preparing art and copy for printing, including selection of…

40 CFR 52.777 - Control strategy: photochemical oxidants (hydrocarbons).

Code of Federal Regulations, 2013 CFR

2013-07-01

... lithography operations, business plastics, automotive plastics, and synthetic organic chemical manufacturing..., automotive plastics, and synthetic organic chemical manufacturing industries (SOCMI) batch processes... Michigan area, and an agreed order between U.S. Steel (currently USX Corporation) and the IDEM signed by...

40 CFR 52.777 - Control strategy: photochemical oxidants (hydrocarbons).

Code of Federal Regulations, 2014 CFR

2014-07-01

... plastics, automotive plastics, and synthetic organic chemical manufacturing industries (SOCMI) batch... wastewater processes, offset lithography operations, business plastics, automotive plastics, and synthetic... order between U.S. Steel (currently USX Corporation) and the IDEM signed by IDEM on March 22, 1996...

40 CFR 52.777 - Control strategy: photochemical oxidants (hydrocarbons).

Code of Federal Regulations, 2010 CFR

2010-07-01

... plastics, automotive plastics, and synthetic organic chemical manufacturing industries (SOCMI) batch... wastewater processes, offset lithography operations, business plastics, automotive plastics, and synthetic... order between U.S. Steel (currently USX Corporation) and the IDEM signed by IDEM on March 22, 1996...

40 CFR 52.777 - Control strategy: photochemical oxidants (hydrocarbons).

Code of Federal Regulations, 2011 CFR

2011-07-01

... plastics, automotive plastics, and synthetic organic chemical manufacturing industries (SOCMI) batch... wastewater processes, offset lithography operations, business plastics, automotive plastics, and synthetic... order between U.S. Steel (currently USX Corporation) and the IDEM signed by IDEM on March 22, 1996...

40 CFR 52.777 - Control strategy: photochemical oxidants (hydrocarbons).

Code of Federal Regulations, 2012 CFR

2012-07-01

... lithography operations, business plastics, automotive plastics, and synthetic organic chemical manufacturing..., automotive plastics, and synthetic organic chemical manufacturing industries (SOCMI) batch processes... Michigan area, and an agreed order between U.S. Steel (currently USX Corporation) and the IDEM signed by...

Scanning digital lithography providing high speed large area patterning with diffraction limited sub-micron resolution

NASA Astrophysics Data System (ADS)

Wen, Sy-Bor; Bhaskar, Arun; Zhang, Hongjie

2018-07-01

A scanning digital lithography system using computer controlled digital spatial light modulator, spatial filter, infinity correct optical microscope and high precision translation stage is proposed and examined. Through utilizing the spatial filter to limit orders of diffraction modes for light delivered from the spatial light modulator, we are able to achieve diffraction limited deep submicron spatial resolution with the scanning digital lithography system by using standard one inch level optical components with reasonable prices. Raster scanning of this scanning digital lithography system using a high speed high precision x-y translation stage and piezo mount to real time adjust the focal position of objective lens allows us to achieve large area sub-micron resolved patterning with high speed (compared with e-beam lithography). It is determined in this study that to achieve high quality stitching of lithography patterns with raster scanning, a high-resolution rotation stage will be required to ensure the x and y directions of the projected pattern are in the same x and y translation directions of the nanometer precision x-y translation stage.

Method for extreme ultraviolet lithography

DOEpatents

Felter, T. E.; Kubiak, Glenn D.

1999-01-01

A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

3D-ICs created using oblique processing

NASA Astrophysics Data System (ADS)

Burckel, D. Bruce

2016-03-01

This paper demonstrates that another class of three-dimensional integrated circuits (3D-ICs) exists, distinct from through silicon via centric and monolithic 3D-ICs. Furthermore, it is possible to create devices that are 3D at the device level (i.e. with active channels oriented in each of the three coordinate axes), by performing standard CMOS fabrication operations at an angle with respect to the wafer surface into high aspect ratio silicon substrates using membrane projection lithography (MPL). MPL requires only minimal fixturing changes to standard CMOS equipment, and no change to current state-of-the-art lithography. Eliminating the constraint of 2D planar device architecture enables a wide range of new interconnect topologies which could help reduce interconnect resistance/capacitance, and potentially improve performance.

Programmable imprint lithography template

DOEpatents

Cardinale, Gregory F [Oakland, CA; Talin, Albert A [Livermore, CA

2006-10-31

A template for imprint lithography (IL) that reduces significantly template production costs by allowing the same template to be re-used for several technology generations. The template is composed of an array of spaced-apart moveable and individually addressable rods or plungers. Thus, the template can be configured to provide a desired pattern by programming the array of plungers such that certain of the plungers are in an "up" or actuated configuration. This arrangement of "up" and "down" plungers forms a pattern composed of protruding and recessed features which can then be impressed onto a polymer film coated substrate by applying a pressure to the template impressing the programmed configuration into the polymer film. The pattern impressed into the polymer film will be reproduced on the substrate by subsequent processing.

Method for extreme ultraviolet lithography

DOEpatents

Felter, T. E.; Kubiak, G. D.

2000-01-01

A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

Science & Technology Review September/October 2008

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bearinger, J P

2008-07-21

This issue has the following articles: (1) Answering Scientists Most Audacious Questions--Commentary by Dona Crawford; (2) Testing the Accuracy of the Supernova Yardstick--High-resolution simulations are advancing understanding of Type Ia supernovae to help uncover the mysteries of dark energy; (3) Developing New Drugs and Personalized Medical Treatment--Accelerator mass spectrometry is emerging as an essential tool for assessing the effects of drugs in humans; (4) Triage in a Patch--A painless skin patch and accompanying detector can quickly indicate human exposure to biological pathogens, chemicals, explosives, or radiation; and (5) Smoothing Out Defects for Extreme Ultraviolet Lithography--A process for smoothing mask defectsmore » helps move extreme ultraviolet lithography one step closer to creating smaller, more powerful computer chips.« less

Future reticle demand and next-generation lithography technologies

NASA Astrophysics Data System (ADS)

Behringer, Uwe F. W.; Ehrlich, Christian; Fortange, Olaf

1999-04-01

Mask technology has often been considered an enabling for semiconductor fabrication. But today photomasks have evolved to a bottle neck in the every increasing integration process of semiconductor circuits. Regarding to the 1997 SIA roadmap there are very stringent requirements for mask making. Even with the momentary weak Asian market the worldwide demand for reticles will continue to grow. The anticipation of larger reticles has been discussed over years. What ever the reason for the need of larger reticles, the move to the 230 mm X 230 mm reticle size will provide size will provide unique challenges to both the mask equipment manufacturers and mask fabricator. Next Generation Lithography together with their mask techniques are in development and try to come into the market.

Computational study on UV curing characteristics in nanoimprint lithography: Stochastic simulation

NASA Astrophysics Data System (ADS)

Koyama, Masanori; Shirai, Masamitsu; Kawata, Hiroaki; Hirai, Yoshihiko; Yasuda, Masaaki

2017-06-01

A computational simulation model of UV curing in nanoimprint lithography based on a simplified stochastic approach is proposed. The activated unit reacts with a randomly selected monomer within a critical reaction radius. Cluster units are chained to each other. Then, another monomer is activated and the next chain reaction occurs. This process is repeated until a virgin monomer disappears within the reaction radius or until the activated monomers react with each other. The simulation model well describes the basic UV curing characteristics, such as the molecular weight distributions of the reacted monomers and the effect of the initiator concentration on the conversion ratio. The effects of film thickness on UV curing characteristics are also studied by the simulation.

Fabrication of flexible oriented magnetic thin films with large in-plane uniaxial anisotropy by roll-to-roll nanoimprint lithography

NASA Astrophysics Data System (ADS)

Thantirige, Rukshan M.; John, Jacob; Pradhan, Nihar R.; Carter, Kenneth R.; Tuominen, Mark T.

2016-06-01

Here, we report wafer scale fabrication of densely packed Fe nanostripe-based magnetic thin films on a flexible substrate and their magnetic anisotropy properties. We find that Fe nanostripes exhibit large in-plane uniaxial anisotropy and nearly square hysteresis loops with energy products (BHmax) exceeding 3 MGOe at room temperature. High density Fe nanostripes were fabricated on 70 nm flexible polyethylene terephthalate (PET) gratings, which were made by a roll-to-roll (R2R) UV nanoimprint lithography technique. We observed large in-plane uniaxial anisotropies along the long dimension of nanostripes that can be attributed to the shape. Temperature dependent hysteresis measurements confirm that the magnetization reversal is driven by non-coherent rotation reversal processes.

Fabrication of Tunnel Junctions For Direct Detector Arrays With Single-Electron Transistor Readout Using Electron-Beam Lithography

NASA Technical Reports Server (NTRS)

Stevenson, T. R.; Hsieh, W.-T.; Li, M. J.; Stahle, C. M.; Rhee, K. W.; Teufel, J.; Schoelkopf, R. J.

2002-01-01

This paper will describe the fabrication of small aluminum tunnel junctions for applications in astronomy. Antenna-coupled superconducting tunnel junctions with integrated single-electron transistor readout have the potential for photon-counting sensitivity at sub-millimeter wavelengths. The junctions for the detector and single-electron transistor can be made with electron-beam lithography and a standard self-aligned double-angle deposition process. However, high yield and uniformity of the junctions is required for large-format detector arrays. This paper will describe how measurement and modification of the sensitivity ratio in the resist bilayer was used to greatly improve the reliability of forming devices with uniform, sub-micron size, low-leakage junctions.

Joint optimization of source, mask, and pupil in optical lithography

NASA Astrophysics Data System (ADS)

Li, Jia; Lam, Edmund Y.

2014-03-01

Mask topography effects need to be taken into consideration for more advanced resolution enhancement techniques in optical lithography. However, rigorous 3D mask model achieves high accuracy at a large computational cost. This work develops a combined source, mask and pupil optimization (SMPO) approach by taking advantage of the fact that pupil phase manipulation is capable of partially compensating for mask topography effects. We first design the pupil wavefront function by incorporating primary and secondary spherical aberration through the coefficients of the Zernike polynomials, and achieve optimal source-mask pair under the condition of aberrated pupil. Evaluations against conventional source mask optimization (SMO) without incorporating pupil aberrations show that SMPO provides improved performance in terms of pattern fidelity and process window sizes.

High resolution imaging and lithography with hard x rays using parabolic compound refractive lenses

NASA Astrophysics Data System (ADS)

Schroer, C. G.; Benner, B.; Günzler, T. F.; Kuhlmann, M.; Zimprich, C.; Lengeler, B.; Rau, C.; Weitkamp, T.; Snigirev, A.; Snigireva, I.; Appenzeller, J.

2002-03-01

Parabolic compound refractive lenses are high quality optical components for hard x rays. They are particularly suited for full field imaging, with applications in microscopy and x-ray lithography. Taking advantage of the large penetration depth of hard x rays, the interior of opaque samples can be imaged with submicrometer resolution. To obtain the three-dimensional structure of a sample, microscopy is combined with tomographic techniques. In a first hard x-ray lithography experiment, parabolic compound refractive lenses have been used to project the reduced image of a lithography mask onto a resist. Future developments are discussed.

Amine control for DUV lithography: identifying hidden sources

NASA Astrophysics Data System (ADS)

Kishkovich, Oleg P.; Larson, Carl E.

2000-06-01

The impact of airborne basic molecular contamination (MB) on the performance of chemically amplified (CA) resist systems has been a long standing problem. Low ppb levels of MB may be sufficient for robust 0.25 micrometer lithography with today's advanced CA resist systems combined with adequate chemical air filtration. However, with minimum CD targets heading below 150 nm, the introduction of new resist chemistries for Next Generation Lithography, and the trend towards thinner resists, the impact of MB at low and sub-ppb levels again becomes a critical manufacturing issue. Maximizing process control at aggressive feature sizes requires that the level of MB be maintained below a certain limit, which depends on such parameters as the sensitivity of the CA resist, the type of production tools, product mix, and process characteristics. Three approaches have been identified to reduce the susceptibility of CA resists to MB: effective chemical air filtration, modifications to resist chemistry/processing and cleanroom protocols involving MB monitoring and removal of MB sources from the fab. The final MB concentration depends on the effectiveness of filtration resources and on the total pollution originating from different sources in and out of the cleanroom. There are many well-documented sources of MB. Among these are: ambient air; polluted exhaust from other manufacturing areas re-entering the cleanroom through make-up air handlers; manufacturing process chemicals containing volatile molecular bases; certain cleanroom construction materials, such as paint and ceiling tiles; and volatile, humidifier system boiler additives (corrosion inhibitors), such as morpholine, cyclohexylamine, and dimethylaminoethanol. However, there is also an indeterminate number of other 'hidden' pollution sources, which are neither obvious nor well-documented. None of these sources are new, but they had little impact on earlier semiconductor manufacturing processes because the contamination levels are low enough that they were tolerable. The purpose of this article is to investigate some of these frequently overlooked sources of basic molecular contamination and to thereby increase the reader's awareness of their potential risks.

Design and fabrication of nano-imprint templates using unique pattern transforms and primitives

NASA Astrophysics Data System (ADS)

MacDonald, Susan; Mellenthin, David; Rentzsch, Kevin; Kramer, Kenneth; Ellenson, James; Hostetler, Tim; Enck, Ron

2005-11-01

Increasing numbers of MEMS, photonic, and integrated circuit manufacturers are investigating the use of Nano-imprint Lithography or Step and Flash Imprint Lithography (SFIL) as a lithography choice for making various devices and products. Their main interests in using these technologies are the lack of aberrations inherent in traditional optical reduction lithography, and the relative low cost of imprint tools. Since imprint templates are at 1X scale, the small sizes of these structures have necessitated the use of high-resolution 50KeV, and 100KeV e-beam lithography tools to build these templates. For MEMS and photonic applications, the structures desired are often circles, arches, and other non-orthogonal shapes. It has long been known that both 50keV, and especially 100keV e-beam lithography tools are extremely accurate, and can produce very high resolution structures, but the trade off is long write times. The main drivers in write time are shot count and stage travel. This work will show how circles and other non-orthogonal shapes can be produced with a 50KeV Variable Shaped Beam (VSB) e-beam lithography system using unique pattern transforms and primitive shapes, while keeping the shot count and write times under control. The quality of shapes replicated into the resist on wafer using an SFIL tool will also be presented.

High Density Metamaterials for Visible Light

DTIC Science & Technology

2016-11-28

gold first and then extend the techniques to other metals for better characteristics. Bio -chemical sensors will be developed based on different split...metamaterials for Bio -chemical sensing. Using our sonicated cold development electron beam lithography process that has recently been shown to overcome

EUV patterning using CAR or MOX photoresist at low dose exposure for sub 36nm pitch

NASA Astrophysics Data System (ADS)

Thibaut, Sophie; Raley, Angélique; Lazarrino, Frederic; Mao, Ming; De Simone, Danilo; Piumi, Daniele; Barla, Kathy; Ko, Akiteru; Metz, Andrew; Kumar, Kaushik; Biolsi, Peter

2018-04-01

The semiconductor industry has been pushing the limits of scalability by combining 193nm immersion lithography with multi-patterning techniques for several years. Those integrations have been declined in a wide variety of options to lower their cost but retain their inherent variability and process complexity. EUV lithography offers a much desired path that allows for direct print of line and space at 36nm pitch and below and effectively addresses issues like cycle time, intra-level overlay and mask count costs associated with multi-patterning. However it also brings its own sets of challenges. One of the major barrier to high volume manufacturing implementation has been hitting the 250W power exposure required for adequate throughput [1]. Enabling patterning using a lower dose resist could help move us closer to the HVM throughput targets assuming required performance for roughness and pattern transfer can be met. As plasma etching is known to reduce line edge roughness on 193nm lithography printed features [2], we investigate in this paper the level of roughness that can be achieved on EUV photoresist exposed at a lower dose through etch process optimization into a typical back end of line film stack. We will study 16nm lines printed at 32 and 34nm pitch. MOX and CAR photoresist performance will be compared. We will review step by step etch chemistry development to reach adequate selectivity and roughness reduction to successfully pattern the target layer.

The impact of 14-nm photomask uncertainties on computational lithography solutions

NASA Astrophysics Data System (ADS)

Sturtevant, John; Tejnil, Edita; Lin, Tim; Schultze, Steffen; Buck, Peter; Kalk, Franklin; Nakagawa, Kent; Ning, Guoxiang; Ackmann, Paul; Gans, Fritz; Buergel, Christian

2013-04-01

Computational lithography solutions rely upon accurate process models to faithfully represent the imaging system output for a defined set of process and design inputs. These models, which must balance accuracy demands with simulation runtime boundary conditions, rely upon the accurate representation of multiple parameters associated with the scanner and the photomask. While certain system input variables, such as scanner numerical aperture, can be empirically tuned to wafer CD data over a small range around the presumed set point, it can be dangerous to do so since CD errors can alias across multiple input variables. Therefore, many input variables for simulation are based upon designed or recipe-requested values or independent measurements. It is known, however, that certain measurement methodologies, while precise, can have significant inaccuracies. Additionally, there are known errors associated with the representation of certain system parameters. With shrinking total CD control budgets, appropriate accounting for all sources of error becomes more important, and the cumulative consequence of input errors to the computational lithography model can become significant. In this work, we examine with a simulation sensitivity study, the impact of errors in the representation of photomask properties including CD bias, corner rounding, refractive index, thickness, and sidewall angle. The factors that are most critical to be accurately represented in the model are cataloged. CD Bias values are based on state of the art mask manufacturing data and other variables changes are speculated, highlighting the need for improved metrology and awareness.

Model-based virtual VSB mask writer verification for efficient mask error checking and optimization prior to MDP

NASA Astrophysics Data System (ADS)

Pack, Robert C.; Standiford, Keith; Lukanc, Todd; Ning, Guo Xiang; Verma, Piyush; Batarseh, Fadi; Chua, Gek Soon; Fujimura, Akira; Pang, Linyong

2014-10-01

A methodology is described wherein a calibrated model-based `Virtual' Variable Shaped Beam (VSB) mask writer process simulator is used to accurately verify complex Optical Proximity Correction (OPC) and Inverse Lithography Technology (ILT) mask designs prior to Mask Data Preparation (MDP) and mask fabrication. This type of verification addresses physical effects which occur in mask writing that may impact lithographic printing fidelity and variability. The work described here is motivated by requirements for extreme accuracy and control of variations for today's most demanding IC products. These extreme demands necessitate careful and detailed analysis of all potential sources of uncompensated error or variation and extreme control of these at each stage of the integrated OPC/ MDP/ Mask/ silicon lithography flow. The important potential sources of variation we focus on here originate on the basis of VSB mask writer physics and other errors inherent in the mask writing process. The deposited electron beam dose distribution may be examined in a manner similar to optical lithography aerial image analysis and image edge log-slope analysis. This approach enables one to catch, grade, and mitigate problems early and thus reduce the likelihood for costly long-loop iterations between OPC, MDP, and wafer fabrication flows. It moreover describes how to detect regions of a layout or mask where hotspots may occur or where the robustness to intrinsic variations may be improved by modification to the OPC, choice of mask technology, or by judicious design of VSB shots and dose assignment.

Ion beam deposition system for depositing low defect density extreme ultraviolet mask blanks

NASA Astrophysics Data System (ADS)

Jindal, V.; Kearney, P.; Sohn, J.; Harris-Jones, J.; John, A.; Godwin, M.; Antohe, A.; Teki, R.; Ma, A.; Goodwin, F.; Weaver, A.; Teora, P.

2012-03-01

Extreme ultraviolet lithography (EUVL) is the leading next-generation lithography (NGL) technology to succeed optical lithography at the 22 nm node and beyond. EUVL requires a low defect density reflective mask blank, which is considered to be one of the top two critical technology gaps for commercialization of the technology. At the SEMATECH Mask Blank Development Center (MBDC), research on defect reduction in EUV mask blanks is being pursued using the Veeco Nexus deposition tool. The defect performance of this tool is one of the factors limiting the availability of defect-free EUVL mask blanks. SEMATECH identified the key components in the ion beam deposition system that is currently impeding the reduction of defect density and the yield of EUV mask blanks. SEMATECH's current research is focused on in-house tool components to reduce their contributions to mask blank defects. SEMATECH is also working closely with the supplier to incorporate this learning into a next-generation deposition tool. This paper will describe requirements for the next-generation tool that are essential to realize low defect density EUV mask blanks. The goal of our work is to enable model-based predictions of defect performance and defect improvement for targeted process improvement and component learning to feed into the new deposition tool design. This paper will also highlight the defect reduction resulting from process improvements and the restrictions inherent in the current tool geometry and components that are an impediment to meeting HVM quality EUV mask blanks will be outlined.

Step-and-Repeat Nanoimprint-, Photo- and Laser Lithography from One Customised CNC Machine.

PubMed

Greer, Andrew Im; Della-Rosa, Benoit; Khokhar, Ali Z; Gadegaard, Nikolaj

2016-12-01

The conversion of a computer numerical control machine into a nanoimprint step-and-repeat tool with additional laser- and photolithography capacity is documented here. All three processes, each demonstrated on a variety of photoresists, are performed successfully and analysed so as to enable the reader to relate their known lithography process(es) to the findings. Using the converted tool, 1 cm(2) of nanopattern may be exposed in 6 s, over 3300 times faster than the electron beam equivalent. Nanoimprint tools are commercially available, but these can cost around 1000 times more than this customised computer numerical control (CNC) machine. The converted equipment facilitates rapid production and large area micro- and nanoscale research on small grants, ultimately enabling faster and more diverse growth in this field of science. In comparison to commercial tools, this converted CNC also boasts capacity to handle larger substrates, temperature control and active force control, up to ten times more curing dose and compactness. Actual devices are fabricated using the machine including an expanded nanotopographic array and microfluidic PDMS Y-channel mixers.

Advancing three-dimensional MEMS by complimentary laser micro manufacturing

NASA Astrophysics Data System (ADS)

Palmer, Jeremy A.; Williams, John D.; Lemp, Tom; Lehecka, Tom M.; Medina, Francisco; Wicker, Ryan B.

2006-01-01

This paper describes improvements that enable engineers to create three-dimensional MEMS in a variety of materials. It also provides a means for selectively adding three-dimensional, high aspect ratio features to pre-existing PMMA micro molds for subsequent LIGA processing. This complimentary method involves in situ construction of three-dimensional micro molds in a stand-alone configuration or directly adjacent to features formed by x-ray lithography. Three-dimensional micro molds are created by micro stereolithography (MSL), an additive rapid prototyping technology. Alternatively, three-dimensional features may be added by direct femtosecond laser micro machining. Parameters for optimal femtosecond laser micro machining of PMMA at 800 nanometers are presented. The technical discussion also includes strategies for enhancements in the context of material selection and post-process surface finish. This approach may lead to practical, cost-effective 3-D MEMS with the surface finish and throughput advantages of x-ray lithography. Accurate three-dimensional metal microstructures are demonstrated. Challenges remain in process planning for micro stereolithography and development of buried features following femtosecond laser micro machining.

Step-and-Repeat Nanoimprint-, Photo- and Laser Lithography from One Customised CNC Machine

NASA Astrophysics Data System (ADS)

Greer, Andrew IM; Della-Rosa, Benoit; Khokhar, Ali Z.; Gadegaard, Nikolaj

2016-03-01

The conversion of a computer numerical control machine into a nanoimprint step-and-repeat tool with additional laser- and photolithography capacity is documented here. All three processes, each demonstrated on a variety of photoresists, are performed successfully and analysed so as to enable the reader to relate their known lithography process(es) to the findings. Using the converted tool, 1 cm2 of nanopattern may be exposed in 6 s, over 3300 times faster than the electron beam equivalent. Nanoimprint tools are commercially available, but these can cost around 1000 times more than this customised computer numerical control (CNC) machine. The converted equipment facilitates rapid production and large area micro- and nanoscale research on small grants, ultimately enabling faster and more diverse growth in this field of science. In comparison to commercial tools, this converted CNC also boasts capacity to handle larger substrates, temperature control and active force control, up to ten times more curing dose and compactness. Actual devices are fabricated using the machine including an expanded nanotopographic array and microfluidic PDMS Y-channel mixers.

Comparison of line shortening assessed by aerial image and wafer measurements

NASA Astrophysics Data System (ADS)

Ziegler, Wolfram; Pforr, Rainer; Thiele, Joerg; Maurer, Wilhelm

1997-02-01

Increasing number of patterns per area and decreasing linewidth demand enhancement technologies for optical lithography. OPC, the correction of systematic non-linearity in the pattern transfer process by correction of design data is one possibility to tighten process control and to increase the lifetime of existing lithographic equipment. The two most prominent proximity effects to be corrected by OPC are CD variation and line shortening. Line shortening measured on a wafer is up to 2 times larger than full resist simulation results. Therefore, the influence of mask geometry to line shortening is a key item to parameterize lithography. The following paper discusses the effect of adding small serifs to line ends with 0.25 micrometer ground-rule design. For reticles produced on an ALTA 3000 with standard wet etch process, the corner rounding on them mask can be reduced by adding serifs of a certain size. The corner rounding was measured and the effect on line shortening on the wafer is determined. This was investigated by resist measurements on wafer, aerial image plus resist simulation and aerial image measurements on the AIMS microscope.

Science& Technology Review October 2003

DOE Office of Scientific and Technical Information (OSTI.GOV)

McMahon, D H

2003-10-01

The October 2003 issue of Science & Technology Review consists of the following articles: (1) Award-Winning Technologies from Collaborative Efforts--Commentary by Hal Graboske; (2) BASIS Counters Airborne Bioterrorism--The Biological Aerosol Sentry and Information System is the first integrated biodefense system; (3) In the Chips for the Coming Decade--A new system is the first full-field lithography tool for use at extreme ultraviolet wavelengths; (4) Smoothing the Way to Print the Next Generation of Computer Chips--With ion-beam thin-film planarization, the reticles and projection optics made for extreme ultraviolet lithography are nearly defect-free; (5) Eyes Can See Clearly Now--The MEMS-based adaptive optics phoroptermore » improves the process of measuring and correcting eyesight aberrations; (6) This Switch Takes the Heat--A thermally compensated Q-switch reduces the light leakage on high-average-power lasers; (7) Laser Process Forms Thick, Curved Metal Parts--A new process shapes parts to exact specifications, improving their resistance to fatigue and corrosion cracking; and (8) Characterizing Tiny Objects without Damaging Them--Livermore researchers are developing nondestructive techniques to probe the Lilliputian world of mesoscale objects.« less

Planar rotational magnetic micromotors with integrated shaft encoder and magnetic rotor levitation

NASA Technical Reports Server (NTRS)

Guckel, Henry; Christenson, T. R.; Skrobis, K. J.; Klein, J.; Karnowsky, M.

1994-01-01

Deep x-ray lithography and electroplating may be combined to form a fabrication tool for micromechanical devices with large structural heights, to 500 micron, and extreme edge acuities, less than 0.1 micron-run-out per 100 micron of height. This process concept which originated in Germany as LIGA may be further extended by adding surface micromachining. This extension permits the fabrication of precision metal and plastic parts which may be assembled into three-dimensional micromechanical components and systems. The processing tool may be used to fabricate devices from ferromagnetic material such as nickel and nickel-iron alloys. These materials when properly heat treated exhibit acceptable magnetic behavior for current to flux conversion and marginal behavior for permanent magnet applications. The tool and materials have been tested via planar, magnetic, rotational micromotor fabrication. Three phase reluctance machines of the 6:4 configuration with 280 micron diameter rotors have been tested and analyzed. Stable rotational speeds to 34,000 rpm with output torques above 10 x 10(exp -9) N-m have been obtained. The behavior is monitored with integrated shaft encoders which are photodiodes which measure the rotor response. Magnetic levitation of the rotor via reluctance forces has been achieved and has reduced frictional torque losses to less than 1 percent of the available torque. The results indicate that high speed limits of these actuators are related to torque ripple. Hysteresis motors with magnetic bearings are under consideration and will produce high speed rotational machines with excellent sensor application potential.

Cracking-assisted fabrication of nanoscale patterns for micro/nanotechnological applications

NASA Astrophysics Data System (ADS)

Kim, Minseok; Kim, Dong-Joo; Ha, Dogyeong; Kim, Taesung

2016-05-01

Cracks are frequently observed in daily life, but they are rarely welcome and are considered as a material failure mode. Interestingly, cracks cause critical problems in various micro/nanofabrication processes such as colloidal assembly, thin film deposition, and even standard photolithography because they are hard to avoid or control. However, increasing attention has been given recently to control and use cracks as a facile, low-cost strategy for producing highly ordered nanopatterns. Specifically, cracking is the breakage of molecular bonds and occurs simultaneously over a large area, enabling fabrication of nanoscale patterns at both high resolution and high throughput, which are difficult to obtain simultaneously using conventional nanofabrication techniques. In this review, we discuss various cracking-assisted nanofabrication techniques, referred to as crack lithography, and summarize the fabrication principles, procedures, and characteristics of the crack patterns such as their position, direction, and dimensions. First, we categorize crack lithography techniques into three technical development levels according to the directional freedom of the crack patterns: randomly oriented, unidirectional, or multidirectional. Then, we describe a wide range of novel practical devices fabricated by crack lithography, including bioassay platforms, nanofluidic devices, nanowire sensors, and even biomimetic mechanosensors.

Studying electron-PAG interactions using electron-induced fluorescence

NASA Astrophysics Data System (ADS)

Narasimhan, Amrit; Grzeskowiak, Steven; Ostrander, Jonathan; Schad, Jonathon; Rebeyev, Eliran; Neisser, Mark; Ocola, Leonidas E.; Denbeaux, Gregory; Brainard, Robert L.

2016-03-01

In extreme ultraviolet (EUV) lithography, 92 eV photons are used to expose photoresists. Typical EUV resists are organic-based and chemically amplified using photoacid generators (PAGs). Upon exposure, PAGs produce acids which catalyze reactions that result in changes in solubility. In EUV lithography, photo- and secondary electrons (energies of 10- 80 eV) play a large role in PAG acid-production. Several mechanisms for electron-PAG interactions (e.g. electron trapping, and hole-initiated chemistry) have been proposed. The aim of this study is to explore another mechanism - internal excitation - in which a bound PAG electron can be excited by receiving energy from another energetic electron, causing a reaction that produces acid. This paper explores the mechanism of internal excitation through the analogous process of electron-induced fluorescence, in which an electron loses energy by transferring that energy to a molecule and that molecule emits a photon rather than decomposing. We will show and quantify electron-induced fluorescence of several fluorophores in polymer films to mimic resist materials, and use this information to refine our proposed mechanism. Relationships between the molecular structure of fluorophores and fluorescent quantum yield may aid in the development of novel PAGs for EUV lithography.

Fabrication of biomimetic dry-adhesion structures through nanosphere lithography

NASA Astrophysics Data System (ADS)

Kuo, P. C.; Chang, N. W.; Suen, Y.; Yang, S. Y.

2018-03-01

Components with surface nanostructures suitable for biomimetic dry adhesion have a great potential in applications such as gecko tape, climbing robots, and skin patches. In this study, a nanosphere lithography technique with self-assembly nanospheres was developed to achieve effective and efficient fabrication of dry-adhesion structures. Self-assembled monolayer nanospheres with high regularity were obtained through tilted dip-coating. Reactive-ion etching of the self-assembled nanospheres was used to fabricate nanostructures of different shapes and aspect ratios by varying the etching time. Thereafter, nickel molds with inverse nanostructures were replicated using the electroforming process. Polydimethylsiloxane (PDMS) nanostructures were fabricated through a gas-assisted hot-embossing method. The pulling test was performed to measure the shear adhesion on the glass substrate of a sample, and the static contact angle was measured to verify the hydrophobic property of the structure. The enhancement of the structure indicates that the adhesion force increased from 1.2 to 4.05 N/cm2 and the contact angle increased from 118.6° to 135.2°. This columnar structure can effectively enhance the adhesion ability of PDMS, demonstrating the potential of using nanosphere lithography for the fabrication of adhesive structures.

Status of EUVL mask development in Europe (Invited Paper)

NASA Astrophysics Data System (ADS)

Peters, Jan H.

2005-06-01

EUV lithography is the prime candidate for the next generation lithography technology after 193 nm immersion lithography. The commercial onset for this technology is expected for the 45 nm half-pitch technology or below. Several European and national projects and quite a large number of companies and research institutions in Europe work on various aspects of the technological challenges to make EUV a commercially viable technology in the not so far future. Here the development of EUV sources, the development of an EUV exposure tools, metrology tools dedicated for characterization of mask, the production of EUV mask blanks and the mask structuring itself are the key areas in which major activities can be found. In this talk we will primarily focus on those activities, which are related to establish an EUV mask supply chain with all its ingredients from substrate production, polishing, deposition of EUV layers, blank characterization, mask patterning process and the consecutive metrology and defect inspection as well as shipping and handling from blank supply to usage in the wafer fab. The EUV mask related projects on the national level are primarily supported by the French Ministry of Economics and Finance (MinEFi) and the German Ministry of Education and Research (BMBF).

Three techniques for the fabrication of high precision, mm-sized metal components based on two-photon lithography, applied for manufacturing horn antennas for THz transceivers

NASA Astrophysics Data System (ADS)

Standaert, Alexander; Brancato, Luigi; Lips, Bram; Ceyssens, Frederik; Puers, Robert; Reynaert, Patrick

2018-03-01

This paper proposes a novel packaging solution which integrates micro-machined 3D horn antennas with millimeter-wave and THz tranceivers. This packaging solution is shown to be a valid competitor to existing technologies like metallic split-block waveguides and low temperature cofired ceramics. Three different fabrication methods based on two-photon lithography are presented to form the horn antennas. The first uses two-photon lithography to form the bulk of the antenna. This structure is then metalised through physical vapor deposition (PVD) and copper plating. The second fabrication method makes use of a soft polydimethylsiloxane (PDMS) mold to easily replicate structures and the third method forms the horn antenna through electroforming. A prototype is accurately positioned on top of a 400 GHz 28 nm CMOS transmitter and glued in place with epoxy, thus providing a fully packaged solution. Measurement results show a 12 dB increase in the antenna gain when using the packaged solution. The fabrication processes are not limited to horn antennas alone and can be used to form a wide range of mm-sized metal components.

Registration performance on EUV masks using high-resolution registration metrology

NASA Astrophysics Data System (ADS)

Steinert, Steffen; Solowan, Hans-Michael; Park, Jinback; Han, Hakseung; Beyer, Dirk; Scherübl, Thomas

2016-10-01

Next-generation lithography based on EUV continues to move forward to high-volume manufacturing. Given the technical challenges and the throughput concerns a hybrid approach with 193 nm immersion lithography is expected, at least in the initial state. Due to the increasing complexity at smaller nodes a multitude of different masks, both DUV (193 nm) and EUV (13.5 nm) reticles, will then be required in the lithography process-flow. The individual registration of each mask and the resulting overlay error are of crucial importance in order to ensure proper functionality of the chips. While registration and overlay metrology on DUV masks has been the standard for decades, this has yet to be demonstrated on EUV masks. Past generations of mask registration tools were not necessarily limited in their tool stability, but in their resolution capabilities. The scope of this work is an image placement investigation of high-end EUV masks together with a registration and resolution performance qualification. For this we employ a new generation registration metrology system embedded in a production environment for full-spec EUV masks. This paper presents excellent registration performance not only on standard overlay markers but also on more sophisticated e-beam calibration patterns.

Revisiting adoption of high transmission PSM: pros, cons and path forward

NASA Astrophysics Data System (ADS)

Ma, Z. Mark; McDonald, Steve; Progler, Chris

2009-12-01

High transmission attenuated phase shift masks (Hi-T PSM) have been successfully applied in volume manufacturing for certain memory devices. Moreover, numerous studies have shown the potential benefits of Hi-T PSM for specific lithography applications. In this paper, the potential for extending Hi-T PSM to logic devices, is revisited with an emphasis on understanding layout, transmission, and manufacturing of Hi-T PSM versus traditional 6% embedded attenuated phase shift mask (EAPSM). Simulations on various layouts show Hi-T PSM has advantage over EAPSM in low duty cycle line patterns and high duty cycle space patterns. The overall process window can be enhanced when Hi- T PSM is combined with optimized optical proximity correction (OPC), sub-resolution assist features (SRAF), and source illumination. Therefore, Hi-T PSM may be a viable and lower cost alternative to other complex resolution enhancement technology (RET) approaches. Aerial image measurement system (AIMS) results on test masks, based on an inverse lithography technology (ILT) generated layout, confirm the simulation results. New advancement in high transmission blanks also make low topography Hi-T PSM a reality, which can minimize scattering effects in high NA lithography.

Hotspot detection using image pattern recognition based on higher-order local auto-correlation

NASA Astrophysics Data System (ADS)

Maeda, Shimon; Matsunawa, Tetsuaki; Ogawa, Ryuji; Ichikawa, Hirotaka; Takahata, Kazuhiro; Miyairi, Masahiro; Kotani, Toshiya; Nojima, Shigeki; Tanaka, Satoshi; Nakagawa, Kei; Saito, Tamaki; Mimotogi, Shoji; Inoue, Soichi; Nosato, Hirokazu; Sakanashi, Hidenori; Kobayashi, Takumi; Murakawa, Masahiro; Higuchi, Tetsuya; Takahashi, Eiichi; Otsu, Nobuyuki

2011-04-01

Below 40nm design node, systematic variation due to lithography must be taken into consideration during the early stage of design. So far, litho-aware design using lithography simulation models has been widely applied to assure that designs are printed on silicon without any error. However, the lithography simulation approach is very time consuming, and under time-to-market pressure, repetitive redesign by this approach may result in the missing of the market window. This paper proposes a fast hotspot detection support method by flexible and intelligent vision system image pattern recognition based on Higher-Order Local Autocorrelation. Our method learns the geometrical properties of the given design data without any defects as normal patterns, and automatically detects the design patterns with hotspots from the test data as abnormal patterns. The Higher-Order Local Autocorrelation method can extract features from the graphic image of design pattern, and computational cost of the extraction is constant regardless of the number of design pattern polygons. This approach can reduce turnaround time (TAT) dramatically only on 1CPU, compared with the conventional simulation-based approach, and by distributed processing, this has proven to deliver linear scalability with each additional CPU.

Fabrication of nanochannels on polyimide films using dynamic plowing lithography

NASA Astrophysics Data System (ADS)

Stoica, Iuliana; Barzic, Andreea Irina; Hulubei, Camelia

2017-12-01

Three distinct polyimide films were analyzed from the point of view of their morphology in order to determine if their surface features can be adapted for applications where surface anisotropy is mandatory. Channels of nanometric dimensions were created on surface of the specimens by using a less common atomic force microscopy (AFM) method, namely Dynamic Plowing Lithography (DPL). The changes generated by DPL procedure were monitored through the surface texture and other functional parameters, denoting the surface orientation degree and also bearing and fluid retention properties. The results revealed that in the same nanolithography conditions, the diamine and dianhydride moieties have affected the characteristics of the nanochannels. This was explained based on the aliphatic/aromatic nature of the monomers and the backbone flexibility. The reported data are of great importance in designing custom nanostructures with enhanced anisotropy on surface of polyimide films for liquid crystal orientation or guided cell growth purposes. At the end, to track the effect of the nanolithography process on the tip sharpness, degradation and contamination, the blind tip reconstruction was performed on AFM probe, before and after lithography experiments, using TGT1 test grating AFM image.

Defect reduction for semiconductor memory applications using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Ye, Zhengmao; Luo, Kang; Irving, J. W.; Lu, Xiaoming; Zhang, Wei; Fletcher, Brian; Liu, Weijun; Xu, Frank; LaBrake, Dwayne; Resnick, Douglas; Sreenivasan, S. V.

2013-03-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash Imprint Lithography (J-FIL) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed leaving a patterned resist on the substrate. Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the defect specifications of high end memory devices. Typical defectivity targets are on the order of 0.10/cm2. In previous studies, we have focused on defects such as random non-fill defects occurring during the resist filling process and repeater defects caused by interactions with particles on the substrate. In this work, we attempted to identify the critical imprint defect types using a mask with NAND Flash-like patterns at dimensions as small as 26nm. The two key defect types identified were line break defects induced by small particulates and airborne contaminants which result in local adhesion failure. After identification, the root cause of the defect was determined, and corrective measures were taken to either eliminate or reduce the defect source. As a result, we have been able to reduce defectivity levels by more than three orders of magnitude in only 12 months and are now achieving defectivity adders as small as 2 adders per lot of wafers.

Design of the ultraprecision stage for lithography using VCM

NASA Astrophysics Data System (ADS)

Kim, Jung-Han; Kim, Mun-Su; Oh, Min-Taek

2007-12-01

This paper presents a new design of precision stage for the reticle in lithography process and a low hunting control method for the stage. The stage has three axes for X,Y, θ Z, those actuated by three voice coil motors individually. The proposed precision stage system has three gap sensors and voice coil motors, and supported by four air bearings, so it do not have any mechanical contact and nonlinear effect such as hysterisis which usually degrade performance in nano level movement. The reticle stage has cross coupled dynamics between X,Y,θ Z, axes, so the forward and inverse kinematics were solved to get an accurate reference position. When the stage is in regulating control mode, there always exist small fluctuations (stage hunting) in the stage movement. Because the low stage hunting characteristic is very important in recent lithography and nano-level applications, the proposed stage has a special regulating controller composed of digital filter, adjustor and switching algorithm. Another importance factor that generates hunting noise is the system noise inside the lithography machine such as EMI from another motor and solenoids. For reducing such system noises, the proposed controller has a two-port transmission system that transfers torque command signal from the DSP board to the amplifier. The low hunting control algorithm and two-port transmission system reduced hunting noise as 35nm(rms) when a conventional PID generates 77nm(rms) in the same mechanical system. The experimental results showed that the reticle system has 100nm linear accuracy and 1μ rad rotation accuracy at the control frequency of 8 kHz.

Computational approach on PEB process in EUV resist: multi-scale simulation

NASA Astrophysics Data System (ADS)

Kim, Muyoung; Moon, Junghwan; Choi, Joonmyung; Lee, Byunghoon; Jeong, Changyoung; Kim, Heebom; Cho, Maenghyo

2017-03-01

For decades, downsizing has been a key issue for high performance and low cost of semiconductor, and extreme ultraviolet lithography is one of the promising candidates to achieve the goal. As a predominant process in extreme ultraviolet lithography on determining resolution and sensitivity, post exposure bake has been mainly studied by experimental groups, but development of its photoresist is at the breaking point because of the lack of unveiled mechanism during the process. Herein, we provide theoretical approach to investigate underlying mechanism on the post exposure bake process in chemically amplified resist, and it covers three important reactions during the process: acid generation by photo-acid generator dissociation, acid diffusion, and deprotection. Density functional theory calculation (quantum mechanical simulation) was conducted to quantitatively predict activation energy and probability of the chemical reactions, and they were applied to molecular dynamics simulation for constructing reliable computational model. Then, overall chemical reactions were simulated in the molecular dynamics unit cell, and final configuration of the photoresist was used to predict the line edge roughness. The presented multiscale model unifies the phenomena of both quantum and atomic scales during the post exposure bake process, and it will be helpful to understand critical factors affecting the performance of the resulting photoresist and design the next-generation material.

Advances in deep-UV processing using cluster tools

NASA Astrophysics Data System (ADS)

Escher, Gary C.; Tepolt, Gary; Mohondro, Robert D.

1993-09-01

Deep-UV laser lithography has shown the capability of supporting the manufacture of multiple generations of integrated circuits (ICs) due to its wide process latitude and depth of focus (DOF) for 0.2 micrometers to 0.5 micrometers feature sizes. This capability has been attained through improvements in deep-UV wide field lens technology, excimer lasers, steppers and chemically amplified, positive deep-UV resists. Chemically amplified deep-UV resists are required for 248 nm lithography due to the poor absorption and sensitivity of conventional novolac resists. The acid catalyzation processes of the new resists requires control of the thermal history and environmental conditions of the lithographic process. Work is currently underway at several resist vendors to reduce the need for these controls, but practical manufacturing solutions exist today. One of these solutions is the integration of steppers and resist tracks into a `cluster tool' or `Lithocell' to insure a consistent thermal profile for the resist process and reduce the time the resist is exposed to atmospheric contamination. The work here reports processing and system integration results with a Machine Technology, Inc (MTI) post-exposure bake (PEB) track interfaced with an advanced GCA XLS 7800 deep-UV stepper [31 mm diameter, variable NA (0.35 - 0.53) and variable sigma (0.3 - 0.74)].

Improving 130nm node patterning using inverse lithography techniques for an analog process

NASA Astrophysics Data System (ADS)

Duan, Can; Jessen, Scott; Ziger, David; Watanabe, Mizuki; Prins, Steve; Ho, Chi-Chien; Shu, Jing

2018-03-01

Developing a new lithographic process routinely involves usage of lithographic toolsets and much engineering time to perform data analysis. Process transfers between fabs occur quite often. One of the key assumptions made is that lithographic settings are equivalent from one fab to another and that the transfer is fluid. In some cases, that is far from the truth. Differences in tools can change the proximity effect seen in low k1 imaging processes. If you use model based optical proximity correction (MBOPC), then a model built in one fab will not work under the same conditions at another fab. This results in many wafers being patterned to try and match a baseline response. Even if matching is achieved, there is no guarantee that optimal lithographic responses are met. In this paper, we discuss the approach used to transfer and develop new lithographic processes and define MBOPC builds for the new lithographic process in Fab B which was transferred from a similar lithographic process in Fab A. By using PROLITHTM simulations to match OPC models for each level, minimal downtime in wafer processing was observed. Source Mask Optimization (SMO) was also used to optimize lithographic processes using novel inverse lithography techniques (ILT) to simultaneously optimize mask bias, depth of focus (DOF), exposure latitude (EL) and mask error enhancement factor (MEEF) for critical designs for each level.

Consideration of correlativity between litho and etching shape

NASA Astrophysics Data System (ADS)

Matsuoka, Ryoichi; Mito, Hiroaki; Shinoda, Shinichi; Toyoda, Yasutaka

2012-03-01

We developed an effective method for evaluating the correlation of shape of Litho and Etching pattern. The purpose of this method, makes the relations of the shape after that is the etching pattern an index in wafer same as a pattern shape on wafer made by a lithography process. Therefore, this method measures the characteristic of the shape of the wafer pattern by the lithography process and can predict the hotspot pattern shape by the etching process. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used wafer CD-SEM. Currently, as semiconductor manufacture moves towards even smaller feature size, this necessitates more aggressive optical proximity correction (OPC) to drive the super-resolution technology (RET). In other words, there is a trade-off between highly precise RET and lithography management, and this has a big impact on the semiconductor market that centers on the semiconductor business. 2-dimensional shape of wafer quantification is important as optimal solution over these problems. Although 1-dimensional shape measurement has been performed by the conventional technique, 2-dimensional shape management is needed in the mass production line under the influence of RET. We developed the technique of analyzing distribution of shape edge performance as the shape management technique. In this study, we conducted experiments for correlation method of the pattern (Measurement Based Contouring) as two-dimensional litho and etch evaluation technique. That is, observation of the identical position of a litho and etch was considered. It is possible to analyze variability of the edge of the same position with high precision.

A comprehensive simulation model of the performance of photochromic films in absorbance-modulation-optical-lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Majumder, Apratim; Helms, Phillip L.; Menon, Rajesh, E-mail: rmenon@eng.utah.edu

2016-03-15

Optical lithography is the most prevalent method of fabricating micro-and nano-scale structures in the semiconductor industry due to the fact that patterning using photons is fast, accurate and provides high throughput. However, the resolution of this technique is inherently limited by the physical phenomenon of diffraction. Absorbance-Modulation-Optical Lithography (AMOL), a recently developed technique has been successfully demonstrated to be able to circumvent this diffraction limit. AMOL employs a dual-wavelength exposure system in conjunction with spectrally selective reversible photo-transitions in thin films of photochromic molecules to achieve patterning of features with sizes beyond the far-field diffraction limit. We have developed amore » finite-element-method based full-electromagnetic-wave solution model that simulates the photo-chemical processes that occur within the thin film of the photochromic molecules under illumination by the exposure and confining wavelengths in AMOL. This model allows us to understand how the material characteristics influence the confinement to sub-diffraction dimensions, of the transmitted point spread function (PSF) of the exposure wavelength inside the recording medium. The model reported here provides the most comprehensive analysis of the AMOL process to-date, and the results show that the most important factors that govern the process, are the polarization of the two beams, the ratio of the intensities of the two wavelengths, the relative absorption coefficients and the concentration of the photochromic species, the thickness of the photochromic layer and the quantum yields of the photoreactions at the two wavelengths. The aim of this work is to elucidate the requirements of AMOL in successfully circumventing the far-field diffraction limit.« less

A study on EUV reticle surface molecular contamination under different storage conditions in a HVM foundry fab

NASA Astrophysics Data System (ADS)

Singh, SherJang; Yatzor, Brett; Taylor, Ron; Wood, Obert; Mangat, Pawitter

2017-03-01

The prospect of EUVL (Extreme Ultraviolet Lithography) insertion into HVM (High Volume Manufacturing) has never been this promising. As technology is prepared for "lab to fab" transition, it becomes important to comprehend challenges associated with integrating EUVL infrastructure within existing high volume chip fabrication processes in a foundry fab. The existing 193nm optical lithography process flow for reticle handling and storage in a fab atmosphere is well established and in-fab reticle contamination concerns are mitigated with the reticle pellicle. However EUVL reticle pellicle is still under development and if available, may only provide protection against particles but not molecular contamination. HVM fab atmosphere is known to be contaminated with trace amounts of AMC's (Atmospheric Molecular Contamination). If such contaminants are organic in nature and get absorbed on the reticle surface, EUV photon cause photo-dissociation resulting into carbon generation which is known to reduce multilayer reflectivity and also degrades exposure uniformity. Chemical diffusion and aggregation of other ions is also reported under the e-beam exposure of a EUV reticle which is known to cause haze issues in optical lithography. Therefore it becomes paramount to mitigate absorbed molecular contaminant concerns on EUVL reticle surface. In this paper, we have studied types of molecular contaminants that are absorbed on an EUVL reticle surface under HVM fab storage and handling conditions. Effect of storage conditions (gas purged vs atmospheric) in different storage pods (Dual pods, Reticle Clamshells) is evaluated. Absorption analysis is done both on ruthenium capping layer as well as TaBN absorber. Ru surface chemistry change as a result of storage is also studied. The efficacy of different reticle cleaning processes to remove absorbed contaminant is evaluated as well.

Progress and process improvements for multiple electron-beam direct write

NASA Astrophysics Data System (ADS)

Servin, Isabelle; Pourteau, Marie-Line; Pradelles, Jonathan; Essomba, Philippe; Lattard, Ludovic; Brandt, Pieter; Wieland, Marco

2017-06-01

Massively parallel electron beam direct write (MP-EBDW) lithography is a cost-effective patterning solution, complementary to optical lithography, for a variety of applications ranging from 200 to 14 nm. This paper will present last process/integration results to achieve targets for both 28 and 45 nm nodes. For 28 nm node, we mainly focus on line-width roughness (LWR) mitigation by playing with stack, new resist platform and bias design strategy. The lines roughness was reduced by using thicker spin-on-carbon (SOC) hardmask (-14%) or non-chemically amplified (non-CAR) resist with bias writing strategy implementation (-20%). Etch transfer into trilayer has been demonstrated by preserving pattern fidelity and profiles for both CAR and non-CAR resists. For 45 nm node, we demonstrate the electron-beam process integration within optical CMOS flows. Resists based on KrF platform show a full compatibility with multiple stacks to fit with conventional optical flow used for critical layers. Electron-beam resist performances have been optimized to fit the specifications in terms of resolution, energy latitude, LWR and stack compatibility. The patterning process overview showing the latest achievements is mature enough to enable starting the multi-beam technology pre-production mode.

Design of an integrated aerial image sensor

NASA Astrophysics Data System (ADS)

Xue, Jing; Spanos, Costas J.

2005-05-01

The subject of this paper is a novel integrated aerial image sensor (IAIS) system suitable for integration within the surface of an autonomous test wafer. The IAIS could be used as a lithography processing monitor, affording a "wafer's eye view" of the process, and therefore facilitating advanced process control and diagnostics without integrating (and dedicating) the sensor to the processing equipment. The IAIS is composed of an aperture mask and an array of photo-detectors. In order to retrieve nanometer scale resolution of the aerial image with a practical photo-detector pixel size, we propose a design of an aperture mask involving a series of spatial phase "moving" aperture groups. We demonstrate a design example aimed at the 65nm technology node through TEMPEST simulation. The optimized, key design parameters include an aperture width in the range of 30nm, aperture thickness in the range of 70nm, and offer a spatial resolution of about 5nm, all with comfortable fabrication tolerances. Our preliminary simulation work indicates the possibility of the IAIS being applied to the immersion lithography. A bench-top far-field experiment verifies that our approach of the spatial frequency down-shift through forming large Moire patterns is feasible.

Intelligent control system based on ARM for lithography tool

NASA Astrophysics Data System (ADS)

Chen, Changlong; Tang, Xiaoping; Hu, Song; Wang, Nan

2014-08-01

The control system of traditional lithography tool is based on PC and MCU. The PC handles the complex algorithm, human-computer interaction, and communicates with MCU via serial port; The MCU controls motors and electromagnetic valves, etc. This mode has shortcomings like big volume, high power consumption, and wasting of PC resource. In this paper, an embedded intelligent control system of lithography tool, based on ARM, is provided. The control system used S5PV210 as processor, completing the functions of PC in traditional lithography tool, and provided a good human-computer interaction by using LCD and capacitive touch screen. Using Android4.0.3 as operating system, the equipment provided a cool and easy UI which made the control more user-friendly, and implemented remote control and debug, pushing video information of product by network programming. As a result, it's convenient for equipment vendor to provide technical support for users. Finally, compared with traditional lithography tool, this design reduced the PC part, making the hardware resources efficiently used and reducing the cost and volume. Introducing embedded OS and the concepts in "The Internet of things" into the design of lithography tool can be a development trend.

Holographic lithography for biomedical applications

NASA Astrophysics Data System (ADS)

Stankevicius, E.; Balciunas, E.; Malinauskas, M.; Raciukaitis, G.; Baltriukiene, D.; Bukelskiene, V.

2012-06-01

Fabrication of scaffolds for cell growth with appropriate mechanical characteristics is top-most important for successful creation of tissue. Due to ability of fast fabrication of periodic structures with a different period, the holographic lithography technique is a suitable tool for scaffolds fabrication. The scaffolds fabricated by holographic lithography can be used in various biomedical investigations such as the cellular adhesion, proliferation and viability. These investigations allow selection of the suitable material and geometry of scaffolds which can be used in creation of tissue. Scaffolds fabricated from di-acrylated poly(ethylene glycol) (PEG-DA-258) over a large area by holographic lithography technique are presented in this paper. The PEG-DA scaffolds fabricated by holographic lithography showed good cytocompatibility for rabbit myogenic stem cells. It was observed that adult rabbit muscle-derived myogenic stem cells grew onto PEG-DA scaffolds. They were attached to the pillars and formed cell-cell interactions. It demonstrates that the fabricated structures have potential to be an interconnection channel network for cell-to-cell interactions, flow transport of nutrients and metabolic waste as well as vascular capillary ingrowth. These results are encouraging for further development of holographic lithography by improving its efficiency for microstructuring three-dimensional scaffolds out of biodegradable hydrogels

Biomimetic postcapillary expansions for enhancing rare blood cell separation on a microfluidic chip†

PubMed Central

Jain, Abhishek

2013-01-01

Blood cells naturally auto-segregate in postcapillary venules, with the erythrocytes (red blood cells, RBCs) aggregating near the axis of flow and the nucleated cells (NCs)—which include leukocytes, progenitor cells and, in cancer patients, circulating tumor cells—marginating toward the vessel wall. We have used this principle to design a microfluidic device that extracts nucleated cells (NCs) from whole blood. Fabricated using polydimethylsiloxane (PDMS) soft lithography, the biomimetic cell extraction device consists of rectangular microchannels that are 20–400 μm wide, 11 μm deep and up to 2 cm long. The key design feature is the use of repeated expansions/contractions of triangular geometry mimicking postcapillary venules, which enhance margination and optimize the extraction. The device operates on unprocessed whole blood and is able to extract 94 ± 4.5% of NCs with 45.75 ± 2.5-fold enrichment in concentration at a rate of 5 nl s−1. The device eliminates the need to preprocess blood via centrifugation or RBC lysis, and is ready to be implemented as the initial stage of lab-on-a-chip devices that require enriched nucleated cells. The potential downstream applications are numerous, encompassing all preclinical and clinical assays that operate on enriched NC populations and include on-chip flow cytometry PMID:21773633

Fabrication of 3D nano-structures using reverse imprint lithography

NASA Astrophysics Data System (ADS)

Han, Kang-Soo; Hong, Sung-Hoon; Kim, Kang-In; Cho, Joong-Yeon; Choi, Kyung-woo; Lee, Heon

2013-02-01

In spite of the fact that the fabrication process of three-dimensional nano-structures is complicated and expensive, it can be applied to a range of devices to increase their efficiency and sensitivity. Simple and inexpensive fabrication of three-dimensional nano-structures is necessary. In this study, reverse imprint lithography (RIL) with UV-curable benzylmethacrylate, methacryloxypropyl terminated poly-dimethylsiloxane (M-PDMS) resin and ZnO-nano-particle-dispersed resin was used to fabricate three-dimensional nano-structures. UV-curable resins were placed between a silicon stamp and a PVA transfer template, followed by a UV curing process. Then, the silicon stamp was detached and a 2D pattern layer was transferred to the substrate using diluted UV-curable glue. Consequently, three-dimensional nano-structures were formed by stacking the two-dimensional nano-patterned layers. RIL was applied to a light-emitting diode (LED) to evaluate the optical effects of a nano-patterned layer. As a result, the light extraction of the patterned LED was increased by about 12% compared to an unpatterned LED.

Fabrication of 3D nano-structures using reverse imprint lithography.

PubMed

Han, Kang-Soo; Hong, Sung-Hoon; Kim, Kang-In; Cho, Joong-Yeon; Choi, Kyung-Woo; Lee, Heon

2013-02-01

In spite of the fact that the fabrication process of three-dimensional nano-structures is complicated and expensive, it can be applied to a range of devices to increase their efficiency and sensitivity. Simple and inexpensive fabrication of three-dimensional nano-structures is necessary. In this study, reverse imprint lithography (RIL) with UV-curable benzylmethacrylate, methacryloxypropyl terminated poly-dimethylsiloxane (M-PDMS) resin and ZnO-nano-particle-dispersed resin was used to fabricate three-dimensional nano-structures.UV-curable resins were placed between a silicon stamp and a PVA transfer template, followed by a UV curing process. Then, the silicon stamp was detached and a 2D pattern layer was transferred to the substrate using diluted UV-curable glue. Consequently, three-dimensional nano-structures were formed by stacking the two-dimensional nano-patterned layers. RIL was applied to a light-emitting diode (LED) to evaluate the optical effects of a nano-patterned layer. As a result, the light extraction of the patterned LED was increased by about 12% compared to an unpatterned LED.

Bringing order to the world of nanowire devices by phase shift lithography.

PubMed

Subannajui, Kittitat; Güder, Firat; Zacharias, Margit

2011-09-14

Semiconductor nanowire devices have several properties which match future requirements of scaling down the size of electronics. In typical microelectronics production, a number of microstructures are aligned precisely on top of each other during the fabrication process. In the case of nanowires, this mandatory condition is still hard to achieve. A technological breakthrough is needed to accurately place nanowires at any specific position and then form devices in mass production. In this article, an upscalable process combining conventional micromachining with phase shift lithography will be demonstrated as a suitable tool for nanowire device technology. Vertical Si and ZnO nanowires are demonstrated on very large (several cm(2)) areas. We demonstrate how the nanowire positions can be controlled, and the resulting nanowires are used for device fabrication. As an example Si/ZnO heterojunction diode arrays are fabricated. The electrical characterization of the produced devices has also been performed to confirm the functionality of the fabricated diodes.

Lithography-free glass surface modification by self-masking during dry etching

NASA Astrophysics Data System (ADS)

Hein, Eric; Fox, Dennis; Fouckhardt, Henning

2011-01-01

Glass surface morphologies with defined shapes and roughness are realized by a two-step lithography-free process: deposition of an ~10-nm-thin lithographically unstructured metallic layer onto the surface and reactive ion etching in an Ar/CF4 high-density plasma. Because of nucleation or coalescence, the metallic layer is laterally structured during its deposition. Its morphology exhibits islands with dimensions of several tens of nanometers. These metal spots cause a locally varying etch velocity of the glass substrate, which results in surface structuring. The glass surface gets increasingly rougher with further etching. The mechanism of self-masking results in the formation of surface structures with typical heights and lateral dimensions of several hundred nanometers. Several metals, such as Ag, Al, Au, Cu, In, and Ni, can be employed as the sacrificial layer in this technology. Choice of the process parameters allows for a multitude of different glass roughness morphologies with individual defined and dosed optical scattering.

Effects on electron scattering and resist characteristics using assisting underlayers for e-beam direct write lithography

NASA Astrophysics Data System (ADS)

Thrun, Xaver; Choi, Kang-Hoon; Hanisch, Norbert; Hohle, Christoph; Steidel, Katja; Guerrero, Douglas; Figueiro, Thiago; Bartha, Johann W.

2013-03-01

Resist processing for future technology nodes becomes more and more complex. The resist film thickness is getting thinner and hardmask concepts (trilayer) are needed for reproducible etch transfer into the stack. Additional layers between resist and substrate are influencing the electron scattering in e-beam lithography and may also improve sensitivity and resolution. In this study, bare silicon wafers with different assisting underlayers were processed in a 300 mm CMOS manufacturing environment and were exposed on a 50 keV VISTEC SB3050DW variable-shaped electron beam direct writer at Fraunhofer CNT. The underlayers are organic-inorganic hybrid coatings with different metal additives. The negative-tone resist was evaluated in terms of contrast, sensitivity, resolution and LWR/LER as a function of the stack. The interactions between resist and different assisting underlayers on e-beam direct writing will be investigated. These layers could be used to optimize the trade-off among resolution, LWR and sensitivity in future applications.

Porosity characteristics of ultra-low dielectric insulator films directly patterned by nano-imprint lithography

NASA Astrophysics Data System (ADS)

Ro, Hyun Wook; Jones, Ronald L.; Peng, Huagen; Lee, Hae-Jeong; Lin, Eric K.; Karim, Alamgir; Yoon, Do Y.; Gidley, David W.; Soles, Christopher L.

2008-03-01

Direct patterning of low-dielectric constant (low-k) materials via nanoimprint lithography (NIL) has the potential to simplify fabrication processes and significantly reduce the manufacturing costs for semiconductor devices. We report direct imprinting of sub-100 nm features into a high modulus methylsilsesquioxane-based organosilicate glass (OSG) material. An excellent fidelity of the pattern transfer process is quantified with nm precision using critical dimension small angle X-ray scattering (CD-SAXS) and specular X-ray reflectivity (SXR). X-ray porosimetry (XRP) and positron annihilation lifetime spectroscopy (PALS) measurements indicate that imprinting increases the inherent microporosity of the methylsilsequioxane-based OSG material. When a porogen (pore generating material) is added, imprinting decreases the population of mesopores associated with the porogen while retaining the enhanced microporosity. The net effect is a decrease the pore interconnectivity. There is also evidence for a sealing effect that is interpreted as an imprint induced dense skin at the surface of the porous pattern.

Comprehensive analysis of line-edge and line-width roughness for EUV lithography

NASA Astrophysics Data System (ADS)

Bonam, Ravi; Liu, Chi-Chun; Breton, Mary; Sieg, Stuart; Seshadri, Indira; Saulnier, Nicole; Shearer, Jeffrey; Muthinti, Raja; Patlolla, Raghuveer; Huang, Huai

2017-03-01

Pattern transfer fidelity is always a major challenge for any lithography process and needs continuous improvement. Lithographic processes in semiconductor industry are primarily driven by optical imaging on photosensitive polymeric material (resists). Quality of pattern transfer can be assessed by quantifying multiple parameters such as, feature size uniformity (CD), placement, roughness, sidewall angles etc. Roughness in features primarily corresponds to variation of line edge or line width and has gained considerable significance, particularly due to shrinking feature sizes and variations of features in the same order. This has caused downstream processes (Etch (RIE), Chemical Mechanical Polish (CMP) etc.) to reconsider respective tolerance levels. A very important aspect of this work is relevance of roughness metrology from pattern formation at resist to subsequent processes, particularly electrical validity. A major drawback of current LER/LWR metric (sigma) is its lack of relevance across multiple downstream processes which effects material selection at various unit processes. In this work we present a comprehensive assessment of Line Edge and Line Width Roughness at multiple lithographic transfer processes. To simulate effect of roughness a pattern was designed with periodic jogs on the edges of lines with varying amplitudes and frequencies. There are numerous methodologies proposed to analyze roughness and in this work we apply them to programmed roughness structures to assess each technique's sensitivity. This work also aims to identify a relevant methodology to quantify roughness with relevance across downstream processes.

Recent developments in the fabrication of ordered nanostructure arrays based on nanosphere lithography.

PubMed

Wei, Xueyong

2010-11-01

Since it was invented two decades ago, Nanosphere Lithography (NSL) has been widely studied as a low cost and flexible technique to fabricate nanostructures. Based on the registered patents and some selected papers, this review will discuss recent developments of different NSL strategies for the fabrication of ordered nanostructure arrays. The mechanism of self-assembly process and the techniques for preparing the self-assembled nanosphere template are first briefly introduced. The nanosphere templates are used either as shadow masks or as moulds for pattern transfer. Much more work now combines NSL with other lithographic techniques and material growth methods to form novel nanostructures of complex shape or various materials. Hence, this review finally gives a discussion on some future directions in NSL study.

EUV lithography for 30nm half pitch and beyond: exploring resolution, sensitivity, and LWR tradeoffs

NASA Astrophysics Data System (ADS)

Putna, E. Steve; Younkin, Todd R.; Chandhok, Manish; Frasure, Kent

2009-03-01

The International Technology Roadmap for Semiconductors (ITRS) denotes Extreme Ultraviolet (EUV) lithography as a leading technology option for realizing the 32nm half-pitch node and beyond. Readiness of EUV materials is currently one high risk area according to assessments made at the 2008 EUVL Symposium. The main development issue regarding EUV resist has been how to simultaneously achieve high sensitivity, high resolution, and low line width roughness (LWR). This paper describes the strategy and current status of EUV resist development at Intel Corporation. Data is presented utilizing Intel's Micro-Exposure Tool (MET) examining the feasibility of establishing a resist process that simultaneously exhibits <=30nm half-pitch (HP) L/S resolution at <=10mJ/cm2 with <=4nm LWR.

EUV lithography for 22nm half pitch and beyond: exploring resolution, LWR, and sensitivity tradeoffs

NASA Astrophysics Data System (ADS)

Putna, E. Steve; Younkin, Todd R.; Caudillo, Roman; Chandhok, Manish

2010-04-01

The International Technology Roadmap for Semiconductors (ITRS) denotes Extreme Ultraviolet (EUV) lithography as a leading technology option for realizing the 22nm half pitch node and beyond. Readiness of EUV materials is currently one high risk area according to recent assessments made at the 2009 EUVL Symposium. The main development issue regarding EUV resist has been how to simultaneously achieve high sensitivity, high resolution, and low line width roughness (LWR). This paper describes the strategy and current status of EUV resist development at Intel Corporation. Data collected utilizing Intel's Micro-Exposure Tool (MET) is presented in order to examine the feasibility of establishing a resist process that simultaneously exhibits <=22nm half-pitch (HP) L/S resolution at <= 12.5mJ/cm2 with <= 4nm LWR.

Servo-integrated patterned media by hybrid directed self-assembly.

PubMed

Xiao, Shuaigang; Yang, Xiaomin; Steiner, Philip; Hsu, Yautzong; Lee, Kim; Wago, Koichi; Kuo, David

2014-11-25

A hybrid directed self-assembly approach is developed to fabricate unprecedented servo-integrated bit-patterned media templates, by combining sphere-forming block copolymers with 5 teradot/in.(2) resolution capability, nanoimprint and optical lithography with overlay control. Nanoimprint generates prepatterns with different dimensions in the data field and servo field, respectively, and optical lithography controls the selective self-assembly process in either field. Two distinct directed self-assembly techniques, low-topography graphoepitaxy and high-topography graphoepitaxy, are elegantly integrated to create bit-patterned templates with flexible embedded servo information. Spinstand magnetic test at 1 teradot/in.(2) shows a low bit error rate of 10(-2.43), indicating fully functioning bit-patterned media and great potential of this approach for fabricating future ultra-high-density magnetic storage media.

Aluminum Nanowire Arrays via Soft Nanoimprint Lithography

NASA Astrophysics Data System (ADS)

Naughton, Michael J.; Nesbitt, Nathan T.; Merlo, Juan M.; Rose, Aaron H.; Calm, Yitzi M.; D'Imperio, Luke A.; Courtney, Dave T.; Shepard, Steve; Kempa, Krzysztof; Burns, Michael J.

We have previously reported a method to fabricate freestanding, vertically-oriented, and lithographically-ordered Al nanowire arrays via directed assembly, and demonstrated their utility as a plasmonic waveguide. However, the process, a variation on the preparation of anodized aluminum oxide (AAO), involved imprinting Al with a hard stamp, which wore down the stamp and had a low yield of Al NWs. Here we show a new nanoimprint lithography (NIL) technique that uses a soft stamp to pattern a mask on the Al; it provides a greater yield of Al NWs and is less destructive to the stamp, providing a path to applications that require NW arrays over macroscopic areas. This material is based upon work supported by the National Science Foundation Graduate Research Fellowship under Grant No. (DGE-1258923).

Enhancing the photon-extraction efficiency of site-controlled quantum dots by deterministically fabricated microlenses

NASA Astrophysics Data System (ADS)

Kaganskiy, Arsenty; Fischbach, Sarah; Strittmatter, André; Rodt, Sven; Heindel, Tobias; Reitzenstein, Stephan

2018-04-01

We report on the realization of scalable single-photon sources (SPSs) based on single site-controlled quantum dots (SCQDs) and deterministically fabricated microlenses. The fabrication process comprises the buried-stressor growth technique complemented with low-temperature in-situ electron-beam lithography for the integration of SCQDs into microlens structures with high yield and high alignment accuracy. The microlens-approach leads to a broadband enhancement of the photon-extraction efficiency of up to (21 ± 2)% and a high suppression of multi-photon events with g (2)(τ = 0) < 0.06 without background subtraction. The demonstrated combination of site-controlled growth of QDs and in-situ electron-beam lithography is relevant for arrays of efficient SPSs which, can be applied in photonic quantum circuits and advanced quantum computation schemes.

Device-level and module-level three-dimensional integrated circuits created using oblique processing

NASA Astrophysics Data System (ADS)

Burckel, D. Bruce

2016-07-01

This paper demonstrates that another class of three-dimensional integrated circuits (3-D-ICs) exists, distinct from through-silicon-via-centric and monolithic 3-D-ICs. Furthermore, it is possible to create devices that are 3-D "at the device level" (i.e., with active channels oriented in each of the three coordinate axes), by performing standard CMOS fabrication operations at an angle with respect to the wafer surface into high aspect ratio silicon substrates using membrane projection lithography (MPL). MPL requires only minimal fixturing changes to standard CMOS equipment, and no change to current state-of-the-art lithography. Eliminating the constraint of two-dimensional planar device architecture enables a wide range of interconnect topologies which could help reduce interconnect resistance/capacitance, and potentially improve performance.

Formation of 2D-PhCs with missing holes based on Si-layers by EBL

NASA Astrophysics Data System (ADS)

Utkin, D. E.; Shklyev, A. A.; Tsarev, A. V.; Latyshev, A. V.

2017-11-01

The fabrication of the periodic structures, that is two-dimensional photonic crystals (2D PhCs) based on Si-materials by electron beam lithography (EBL) technique has been studied. We have investigated basic lithography processes such as designing, exposition, development, etching and others. The developed top-down approach allows close-packed arrays of elements and holes to be formed in nanometre range. This can be used to produce 2D PhCs with emitting micro-cavities (missing holes) with lateral size parameters with an accuracy of about 2% in the Si (100) substrate and in silicon-on-insulator structures. Such accuracy is expected to be sufficient for obtaining the cavities-coupling radiation interference from large areas of 2D PhCs.

Extreme ultraviolet resist materials for sub-7 nm patterning.

PubMed

Li, Li; Liu, Xuan; Pal, Shyam; Wang, Shulan; Ober, Christopher K; Giannelis, Emmanuel P

2017-08-14

Continuous ongoing development of dense integrated circuits requires significant advancements in nanoscale patterning technology. As a key process in semiconductor high volume manufacturing (HVM), high resolution lithography is crucial in keeping with Moore's law. Currently, lithography technology for the sub-7 nm node and beyond has been actively investigated approaching atomic level patterning. EUV technology is now considered to be a potential alternative to HVM for replacing in some cases ArF immersion technology combined with multi-patterning. Development of innovative resist materials will be required to improve advanced fabrication strategies. In this article, advancements in novel resist materials are reviewed to identify design criteria for establishment of a next generation resist platform. Development strategies and the challenges in next generation resist materials are summarized and discussed.

Direct nanopatterning of 100 nm metal oxide periodic structures by Deep-UV immersion lithography.

PubMed

Stehlin, Fabrice; Bourgin, Yannick; Spangenberg, Arnaud; Jourlin, Yves; Parriaux, Olivier; Reynaud, Stéphanie; Wieder, Fernand; Soppera, Olivier

2012-11-15

Deep-UV lithography using high-efficiency phase mask has been developed to print 100 nm period grating on sol-gel based thin layer. High efficiency phase mask has been designed to produce a high-contrast interferogram (periodic fringes) under water immersion conditions for 244 nm laser. The demonstration has been applied to a new developed immersion-compatible sol-gel layer. A sol-gel photoresist prepared from zirconium alkoxides caped with methacrylic acids was developed to achieve 50 nm resolution in a single step exposure. The nanostructures can be thermally annealed into ZrO(2). Such route considerably simplifies the process for elaborating nanopatterned surfaces of transition metal oxides, and opens new routes for integrating materials of interest for applications in the field of photocatalysis, photovoltaic, optics, photonics or microelectronics.

Fabrication of large-area nano-scale patterned sapphire substrate with laser interference lithography

NASA Astrophysics Data System (ADS)

Xuan, Ming-dong; Dai, Long-gui; Jia, Hai-qiang; Chen, Hong

2014-01-01

Periodic triangle truncated pyramid arrays are successfully fabricated on the sapphire substrate by a low-cost and high-efficiency laser interference lithography (LIL) system. Through the combination of dry etching and wet etching techniques, the nano-scale patterned sapphire substrate (NPSS) with uniform size is prepared. The period of the patterns is 460 nm as designed to match the wavelength of blue light emitting diode (LED). By improving the stability of the LIL system and optimizing the process parameters, well-defined triangle truncated pyramid arrays can be achieved on the sapphire substrate with diameter of 50.8 mm. The deviation of the bottom width of the triangle truncated pyramid arrays is 6.8%, which is close to the industrial production level of 3%.

Simulation of exposure and alignment for nanoimprint lithography

NASA Astrophysics Data System (ADS)

Deng, Yunfei; Neureuther, Andrew R.

2002-07-01

Rigorous electromagnetic simulation with TEMPEST is used to examine the exposure and alignment processes for nano-imprint lithography with attenuating thin-film molds. Parameters in the design of topographical features of the nano-imprint system and material choices of the components are analyzed. The small feature size limits light transmission through the feature. While little can be done with auxiliary structures to attract light into small holes, the use of an absorbing material with a low real part of the refractive index such as silver helps mitigates the problem. Results on complementary alignment marks shows that the small transmission through the metal layer and the vertical separation of two alignment marks create the leakage equivalent to 1 nm misalignment but satisfactory alignment can be obtained by measuring alignment signals over a +/- 30 nm range.

Patterning and templating for nanoelectronics.

PubMed

Galatsis, Kosmas; Wang, Kang L; Ozkan, Mihri; Ozkan, Cengiz S; Huang, Yu; Chang, Jane P; Monbouquette, Harold G; Chen, Yong; Nealey, Paul; Botros, Youssry

2010-02-09

The semiconductor industry will soon be launching 32 nm complementary metal oxide semiconductor (CMOS) technology node using 193 nm lithography patterning technology to fabricate microprocessors with more than 2 billion transistors. To ensure the survival of Moore's law, alternative patterning techniques that offer advantages beyond conventional top-down patterning are aggressively being explored. It is evident that most alternative patterning techniques may not offer compelling advantages to succeed conventional top-down lithography for silicon integrated circuits, but alternative approaches may well indeed offer functional advantages in realising next-generation information processing nanoarchitectures such as those based on cellular, bioinsipired, magnetic dot logic, and crossbar schemes. This paper highlights and evaluates some patterning methods from the Center on Functional Engineered Nano Architectonics in Los Angeles and discusses key benchmarking criteria with respect to CMOS scaling.

Logic gate scanner focus control in high-volume manufacturing using scatterometry

NASA Astrophysics Data System (ADS)

Dare, Richard J.; Swain, Bryan; Laughery, Michael

2004-05-01

Tool matching and optimal process control are critical requirements for success in semiconductor manufacturing. It is imperative that a tool"s operating conditions are understood and controlled in order to create a process that is repeatable and produces devices within specifications. Likewise, it is important where possible to match multiple systems using some methodology, so that regardless of which tool is used the process remains in control. Agere Systems is currently using Timbre Technologies" Optical Digital Profilometry (ODP) scatterometry for controlling Nikon scanner focus at the most critical lithography layer; logic gate. By adjusting focus settings and verifying the resultant changes in resist profile shape using ODP, it becomes possible to actively control scanner focus to achieve a desired resist profile. Since many critical lithography processes are designed to produce slightly re-entrant resist profiles, this type of focus control is not possible via Critical Dimension Scanning Electron Microscopy (CDSEM) where reentrant profiles cannot be accurately determined. Additionally, the high throughput and non-destructive nature of this measurement technique saves both cycle time and wafer costs compared to cross-section SEM. By implementing an ODP daily process check and after any maintenance on a scanner, Agere successfully enabled focus drift control, i.e. making necessary focus or equipment changes in order to maintain a desired resist profile.

Potential Technology Transfer to the DoD Unmanned Ground Vehicle Program.

DTIC Science & Technology

1996-10-01

Germany. This process combines x-ray lithography, galvanic casting, and micromolding technology and can be used to produce a variety of sensors and...whether circulation is being obstructed by atherosclerosis . Finally, work is being done at the University of Minnesota on a microrobotic device

Recent developments of x-ray lithography in Canada

NASA Astrophysics Data System (ADS)

Chaker, Mohamed; Boily, Stephane; Ginovker, A.; Jean, Alain; Kieffer, Jean-Claude; Mercier, P. P.; Pepin, Henri; Leung, Pak; Currie, John F.; Lafontaine, Hugues

1991-08-01

An overview of current activities in Canada is reported, including x-ray lithography studies based on laser plasma sources and x-ray mask development. In particular, the application of laser plasma sources for x-ray lithography is discussed, taking into account the industrial requirement and the present state of laser technology. The authors describe the development of silicon carbide membranes for x-ray lithography application. SiC films were prepared using either a 100 kHz plasma-enhanced chemical vapor deposition (PECVD) system or a laser ablation technique. These membranes have a relatively large diameter (> 1 in.) and a high optical transparency (> 50%). Experimental studies on stresses in tungsten films deposited with triode sputtering are reported.

Polymer blend lithography: A versatile method to fabricate nanopatterned self-assembled monolayers.

PubMed

Huang, Cheng; Moosmann, Markus; Jin, Jiehong; Heiler, Tobias; Walheim, Stefan; Schimmel, Thomas

2012-01-01

A rapid and cost-effective lithographic method, polymer blend lithography (PBL), is reported to produce patterned self-assembled monolayers (SAM) on solid substrates featuring two or three different chemical functionalities. For the pattern generation we use the phase separation of two immiscible polymers in a blend solution during a spin-coating process. By controlling the spin-coating parameters and conditions, including the ambient atmosphere (humidity), the molar mass of the polystyrene (PS) and poly(methyl methacrylate) (PMMA), and the mass ratio between the two polymers in the blend solution, the formation of a purely lateral morphology (PS islands standing on the substrate while isolated in the PMMA matrix) can be reproducibly induced. Either of the formed phases (PS or PMMA) can be selectively dissolved afterwards, and the remaining phase can be used as a lift-off mask for the formation of a nanopatterned functional silane monolayer. This "monolayer copy" of the polymer phase morphology has a topographic contrast of about 1.3 nm. A demonstration of tuning of the PS island diameter is given by changing the molar mass of PS. Moreover, polymer blend lithography can provide the possibility of fabricating a surface with three different chemical components: This is demonstrated by inducing breath figures (evaporated condensed entity) at higher humidity during the spin-coating process. Here we demonstrate the formation of a lateral pattern consisting of regions covered with 1H,1H,2H,2H-perfluorodecyltrichlorosilane (FDTS) and (3-aminopropyl)triethoxysilane (APTES), and at the same time featuring regions of bare SiO(x). The patterning process could be applied even on meter-sized substrates with various functional SAM molecules, making this process suitable for the rapid preparation of quasi two-dimensional nanopatterned functional substrates, e.g., for the template-controlled growth of ZnO nanostructures [1].

Modeling of projection electron lithography

NASA Astrophysics Data System (ADS)

Mack, Chris A.

2000-07-01

Projection Electron Lithography (PEL) has recently become a leading candidate for the next generation of lithography systems after the successful demonstration of SCAPEL by Lucent Technologies and PREVAIL by IBM. These systems use a scattering membrane mask followed by a lens with limited angular acceptance range to form an image of the mask when illuminated by high energy electrons. This paper presents an initial modeling system for such types of projection electron lithography systems. Monte Carlo modeling of electron scattering within the mask structure creates an effective mask 'diffraction' pattern, to borrow the standard optical terminology. A cutoff of this scattered pattern by the imaging 'lens' provides an electron energy distribution striking the wafer. This distribution is then convolved with a 'point spread function,' the results of a Monte Carlo scattering calculation of a point beam of electrons striking the resist coated substrate and including the effects of beam blur. Resist exposure and development models from standard electron beam lithography simulation are used to simulate the final three-dimensional resist profile.

EB and EUV lithography using inedible cellulose-based biomass resist material

NASA Astrophysics Data System (ADS)

Takei, Satoshi; Hanabata, Makoto; Oshima, Akihiro; Kashiwakura, Miki; Kozawa, Takahiro; Tagawa, Seiichi

2016-03-01

The validity of our approach of inedible cellulose-based resist material derived from woody biomass has been confirmed experimentally for the use of pure water in organic solvent-free water spin-coating and tetramethylammonium hydroxide(TMAH)-free water-developable techniques of eco-conscious electron beam (EB) and extreme-ultraviolet (EUV) lithography. The water developable, non-chemically amplified, high sensitive, and negative tone resist material in EB and EUV lithography was developed for environmental affair, safety, easiness of handling, and health of the working people. The inedible cellulose-based biomass resist material was developed by replacing the hydroxyl groups in the beta-linked disaccharides with EB and EUV sensitive groups. The 50-100 nm line and space width, and little footing profiles of cellulose-based biomass resist material on hardmask and layer were resolved at the doses of 10-30 μC/cm2. The eco-conscious lithography techniques was referred to as green EB and EUV lithography using inedible cellulose-based biomass resist material.

Foundry Microfabrication of Deformable Mirrors for Adaptive Optics

DTIC Science & Technology

1998-04-28

radians) of deflection. The 25% amplitude modulation of the piston array is due to constructive and destructive interference of light reflecting off the...34 Lithographie Galvanoformung und Abformung" is frequently applied to these plating processes. In the LIGA process synchrotron x-ray radiation is used to... interference because the support structures were metallized. In addition, only 61 mirror elements were controlled. Two approaches to improved

Imprint process performance for patterned media at densities greater than 1Tb/in2

NASA Astrophysics Data System (ADS)

Ye, Zhengmao; Carden, Scott; Hellebrekers, Paul; LaBrake, Dwayne; Resnick, Douglas J.; Melliar-Smith, M.; Sreenivasan, S. V.

2012-03-01

The use of bit pattern media beyond densities of 1Tb/in2 requires the ability to pattern dimensions to sub 10nm. This paper describes the techniques used to reach these dimensions with imprint lithography and avoid such challenges as pattern collapse, by developing improved resist materials with higher strength, and utilizing a reverse tone J-FIL/R process.

Precision process calibration and CD predictions for low-k1 lithography

NASA Astrophysics Data System (ADS)

Chen, Ting; Park, Sangbong; Berger, Gabriel; Coskun, Tamer H.; de Vocht, Joep; Chen, Fung; Yu, Linda; Hsu, Stephen; van den Broeke, Doug; Socha, Robert; Park, Jungchul; Gronlund, Keith; Davis, Todd; Plachecki, Vince; Harris, Tom; Hansen, Steve; Lambson, Chuck

2005-06-01

Leading resist calibration for sub-0.3 k1 lithography demands accuracy <2nm for CD through pitch. An accurately calibrated resist process is the prerequisite for establishing production-worthy manufacturing under extreme low k1. From an integrated imaging point of view, the following key components must be simultaneously considered during the calibration - high numerical aperture (NA>0.8) imaging characteristics, customized illuminations (measured vs. modeled pupil profiles), resolution enhancement technology (RET) mask with OPC, reticle metrology, and resist thin film substrate. For imaging at NA approaching unity, polarized illumination can impact significantly the contrast formation in the resist film stack, and therefore it is an important factor to consider in the CD-based resist calibration. For aggressive DRAM memory core designs at k1<0.3, pattern-specific illumination optimization has proven to be critical for achieving the required imaging performance. Various optimization techniques from source profile optimization with fixed mask design to the combined source and mask optimization have been considered for customer designs and available imaging capabilities. For successful low-k1 process development, verification of the optimization results can only be made with a sufficiently tunable resist model that can predicate the wafer printing accurately under various optimized process settings. We have developed, for resist patterning under aggressive low-k1 conditions, a novel 3D diffusion model equipped with double-Gaussian convolution in each dimension. Resist calibration with the new diffusion model has demonstrated a fitness and CD predication accuracy that rival or outperform the traditional 3D physical resist models. In this work, we describe our empirical approach to achieving the nm-scale precision for advanced lithography process calibrations, using either measured 1D CD through-pitch or 2D memory core patterns. We show that for ArF imaging, the current resist development and diffusion modeling can readily achieve ~1-2nm max CD errors for common 1D through-pitch and aggressive 2D memory core resist patterns. Sensitivities of the calibrated models to various process parameters are analyzed, including the comparison between the measured and modeled (Gaussian or GRAIL) pupil profiles. We also report our preliminary calibration results under selected polarized illumination conditions.

Fabrication of Three-Dimensional Imprint Lithography Templates by Colloidal Dispersions

DTIC Science & Technology

2011-03-06

Dispersions A. Marcia Almanza-Workman, Taussig P. Carl, Albert H. Jeans, Robert L. Cobene HP Laboratories HPL-2011-32 Flexible displays, Self aligned...imprint lithography, stamps, fluorothermoplastics, latex Self -aligned imprint lithography (SAIL) enables patterning and alignment of submicron-sized...features on flexible substrates in the roll-to roll (R2R) environment. Soft molds made of elastomers have been used as stamps to pattern three

Intregrating metallic wiring with three-dimensional polystyrene colloidal crystals using electron-beam lithography and three-dimensional laser lithography

NASA Astrophysics Data System (ADS)

Tian, Yaolan; Isotalo, Tero J.; Konttinen, Mikko P.; Li, Jiawei; Heiskanen, Samuli; Geng, Zhuoran; Maasilta, Ilari J.

2017-02-01

We demonstrate a method to fabricate narrow, down to a few micron wide metallic leads on top of a three-dimensional (3D) colloidal crystal self-assembled from polystyrene (PS) nanospheres of diameter 260 nm, using electron-beam lithography. This fabrication is not straightforward due to the fact that PS nanospheres cannot usually survive the harsh chemical treatments required in the development and lift-off steps of electron-beam lithography. We solve this problem by increasing the chemical resistance of the PS nanospheres using an additional electron-beam irradiation step, which allows the spheres to retain their shape and their self-assembled structure, even after baking to a temperature of 160 °C, the exposure to the resist developer and the exposure to acetone, all of which are required for the electron-beam lithography step. Moreover, we show that by depositing an aluminum oxide capping layer on top of the colloidal crystal after the e-beam irradiation, the surface is smooth enough so that continuous metal wiring can be deposited by the electron-beam lithography. Finally, we also demonstrate a way to self-assemble PS colloidal crystals into a microscale container, which was fabricated using direct-write 3D laser-lithography. Metallic wiring was also successfully integrated with the combination of a container structure and a PS colloidal crystal. Our goal is to make a device for studies of thermal transport in 3D phononic crystals, but other phononic or photonic crystal applications could also be envisioned.

Patterned self-assembled monolayers for nanoscale lithography and the control of catalytically produced electroosmosis

NASA Astrophysics Data System (ADS)

Subramanian, Shyamala

This thesis explores two applications of self-assembled monolayers (SAMs) (a) for developing novel molecular assembly based nanolithography techniques and (b) for tailoring zeta-potential of surfaces towards achieving directional control of catalytically induced fluid flow. The first half of the thesis develops the process of molecular ruler lithography using sacrificial host structures. This is a novel hybrid nanolithography technique which combines chemical self-assembly with conventional fabrication methods for improving the resolution of existing lithography tools to sub-50 nm. Previous work related to molecular ruler lithography have shown the use of thiol-SAMs, placed one on top of the other like a molecular resist, for scaling down feature sizes. In this thesis various engineering solutions for improving the reproducibility, yield, nanoscale roughness and overall manufacturability of the process are introduced. This is achieved by introducing a sacrificial inert layer underneath the gold parent structure. This bilayer sacrificial host allows for preferential, easy and quick removal of the parent structures, isolates the parent metal from the underlying substrate and improves reproducibility of the lift-off process. Also it opens avenues for fabrication of high aspect ratio features. Also molecular layer vapor deposition method is developed for building the multilayer molecular resist via vapor phase to reduce contaminations and yield issues associated with solution phase deposition. The smallest isolated metal features produced using this process were 40 nm in width. The second half of the thesis describes application of thiol-SAMs to tailor surface properties of gold, specifically the surface charge or zeta potential. Previous work has demonstrated that the direction of movement of fluid in the vicinity of a catalytically active bimetallic junction placed in a solution of dilute hydrogen peroxide depends on the charge of the gold surface. SAMs with different end-group functionality impart different surface zeta potential to the gold surface. Zeta-potential engineering via patterning various end-group functionalized SAMs on gold surface to control direction of catalytically induced electroosmotic fluid flow is demonstrated for the first time. This work also describes the application of catalytic power to produce controlled rotational motion. Gold gears-like structures made using conventional microfabrication techniques and propelled by catalytic power are shown to rotate at speeds of 1 rotation/sec in a dilute solution of hydrogen peroxide. Fabrication of a force sensor for detection and measurement of catalytic forces is also introduced. The force sensor, with sensitivity in the piconewton range, consists of a microcantilever with a catalytically active silver post patterned on the tip. Changes in cantilever displacement and resonance frequency due to the catalytic force were monitored as a function of concentration of hydrogen peroxide. Overall, this thesis integrates SAM deposition and patterning techniques with conventional fabrication methods to engineer and control nanoscale structures and devices. Possible future device designs are described including CMOS devices having channel width defined using molecular ruler lithography with sacrificial hosts, drug delivery device based on AFM force sensor and channeless pumps powered by catalytic reactions with SAM controlled electroosmotic fluid flow.

Development of new resist materials for 193-nm dry and immersion lithography

NASA Astrophysics Data System (ADS)

Sasaki, Takashi; Shirota, Naoko; Takebe, Yoko; Yokokoji, Osamu

2006-03-01

We earlier developed new monocyclic fluoropolymers (FUGU) for F II resist materials. But, it is necessary for FUGU to improve of their characteristics, especially the dry-etching resistance, in order to apply for ArF lithography at fine design rules. We have tried to combine FUGUs with Adamntyl methacrylates based conventional ArF resist polymer. In this paper, we have investigated the role of cyclic fluorinated unit, FUGU, in 193 nm resist polymers by analyzing the dissolution behavior. We found that FGEAM showed high sensitivity and good dissolution contrast, compared with acrylate based conventional samples at low PEB temperature (100 °C). And this difference of sensitivity was clearly found when weak acidity PAGs were used. From the dissolution behaviors of FGEAM, FUGU unit can work to improve the resist sensitivity in acrylate based ArF resist polymers. And we also found that FGEAM showed long acid diffusion length on PEB process, compared with Conventional samples. These result show that FUGU unit has a unique characteristics of the sensitivity with 193nm exposure and the acid diffusion behavior. We also investigated a new series of fluorinated copolymers for 193-nm lithography, combination of FUGU monomer and acrylate units which are used in conventional ArF resist. Six ter-polymers of FUGU, combination of FUGU monomers and EAdMA, GBLMA and HAdMA were prepared. We found that FUGU ter-polymers had a good dry etching resistance keeping high transparency at 193nm. And FUGU ter-polymers showed high sensitivity toward 193nm exposure. FUGU ter-polymers also had a high hydrophobic properties compared conventional type ArF resist polymers. So we also expect FUGU ter-polymers to be useful for ArF dry and immersion lithography.

Programmable lithography engine (ProLE) grid-type supercomputer and its applications

NASA Astrophysics Data System (ADS)

Petersen, John S.; Maslow, Mark J.; Gerold, David J.; Greenway, Robert T.

2003-06-01

There are many variables that can affect lithographic dependent device yield. Because of this, it is not enough to make optical proximity corrections (OPC) based on the mask type, wavelength, lens, illumination-type and coherence. Resist chemistry and physics along with substrate, exposure, and all post-exposure processing must be considered too. Only a holistic approach to finding imaging solutions will accelerate yield and maximize performance. Since experiments are too costly in both time and money, accomplishing this takes massive amounts of accurate simulation capability. Our solution is to create a workbench that has a set of advanced user applications that utilize best-in-class simulator engines for solving litho-related DFM problems using distributive computing. Our product, ProLE (Programmable Lithography Engine), is an integrated system that combines Petersen Advanced Lithography Inc."s (PAL"s) proprietary applications and cluster management software wrapped around commercial software engines, along with optional commercial hardware and software. It uses the most rigorous lithography simulation engines to solve deep sub-wavelength imaging problems accurately and at speeds that are several orders of magnitude faster than current methods. Specifically, ProLE uses full vector thin-mask aerial image models or when needed, full across source 3D electromagnetic field simulation to make accurate aerial image predictions along with calibrated resist models;. The ProLE workstation from Petersen Advanced Lithography, Inc., is the first commercial product that makes it possible to do these intensive calculations at a fraction of a time previously available thus significantly reducing time to market for advance technology devices. In this work, ProLE is introduced, through model comparison to show why vector imaging and rigorous resist models work better than other less rigorous models, then some applications of that use our distributive computing solution are shown. Topics covered describe why ProLE solutions are needed from an economic and technical aspect, a high level discussion of how the distributive system works, speed benchmarking, and finally, a brief survey of applications including advanced aberrations for lens sensitivity and flare studies, optical-proximity-correction for a bitcell and an application that will allow evaluation of the potential of a design to have systematic failures during fabrication.

Sub-Optical Lithography With Nanometer Definition Masks

NASA Technical Reports Server (NTRS)

Hartley, Frank T.; Malek, Chantal Khan; Neogi, Jayant

2000-01-01

Nanometer feature size lithography represents a major paradigm shift for the electronics and micro-electro-mechanical industries. In this paper, we discuss the capacity of dynamic focused reactive ion beam (FIB) etching systems to undertake direct and highly anisotropic erosion of thick evaporated gold coatings on boron-doped silicon X-ray mask membranes. FIB offers a new level of flexibility in micro fabrication, allowing for fast fabrication of X-ray masks, where pattern definition and surface alteration are combined in the same step which eliminates the whole lithographic process, in particular resist, resist development, electro-deposition and resist removal. Focused ion beam diameters as small as 7 nm can be obtained enabling fabrication well into the sub-20 nm regime. In preliminary demonstrations of this X-ray mask fabrication technique 22 nm width lines were milled directly through 0.9 microns of gold and a miniature mass spectrometer pattern was milled through over 0.5 microns of gold. Also presented are the results of the shadow printing, using the large depth of field of synchrotron high energy parallel X-ray beam, of these and other sub-optical defined patterns in photoresist conformally coated over surfaces of extreme topographical variation. Assuming that electronic circuits and/or micro devices scale proportionally, the surface area of devices processed with X-ray lithography and 20 nm critical dimension X-ray masks would be 0.5% that of contemporary devices (350 nm CD). The 20 CD mask fabrication represents an initial effort - a further factor of three reduction is anticipated which represents a further order-of-magnitude reduction in die area.

The impact of 14nm photomask variability and uncertainty on computational lithography solutions

NASA Astrophysics Data System (ADS)

Sturtevant, John; Tejnil, Edita; Buck, Peter D.; Schulze, Steffen; Kalk, Franklin; Nakagawa, Kent; Ning, Guoxiang; Ackmann, Paul; Gans, Fritz; Buergel, Christian

2013-09-01

Computational lithography solutions rely upon accurate process models to faithfully represent the imaging system output for a defined set of process and design inputs. These models rely upon the accurate representation of multiple parameters associated with the scanner and the photomask. Many input variables for simulation are based upon designed or recipe-requested values or independent measurements. It is known, however, that certain measurement methodologies, while precise, can have significant inaccuracies. Additionally, there are known errors associated with the representation of certain system parameters. With shrinking total CD control budgets, appropriate accounting for all sources of error becomes more important, and the cumulative consequence of input errors to the computational lithography model can become significant. In this work, we examine via simulation, the impact of errors in the representation of photomask properties including CD bias, corner rounding, refractive index, thickness, and sidewall angle. The factors that are most critical to be accurately represented in the model are cataloged. CD bias values are based on state of the art mask manufacturing data and other variables changes are speculated, highlighting the need for improved metrology and communication between mask and OPC model experts. The simulations are done by ignoring the wafer photoresist model, and show the sensitivity of predictions to various model inputs associated with the mask. It is shown that the wafer simulations are very dependent upon the 1D/2D representation of the mask and for 3D, that the mask sidewall angle is a very sensitive factor influencing simulated wafer CD results.

Sequential infiltration synthesis for enhancing multiple-patterning lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Darling, Seth B.; Elam, Jeffrey W.; Tseng, Yu-Chih

Simplified methods of multiple-patterning photolithography using sequential infiltration synthesis to modify the photoresist such that it withstands plasma etching better than unmodified resist and replaces one or more hard masks and/or a freezing step in MPL processes including litho-etch-litho-etch photolithography or litho-freeze-litho-etch photolithography.

Interconnections in ULSI: Correlation and Crosstalk

DTIC Science & Technology

1992-12-31

basic tool is electron beam lithography of poly (methyl methacrylate) (PMMA). The two central issues to creating very dense patterns as described...direct lithographic techniques. Fig. 2: Ti/Au (2 nm/15 nm) grating with 38 nm pitch fabricated by electron beam lithography using our high contrast...G. H. Bernstein, G. Bazan, and D. A. Hill, "Spatial Density of Lines in PMMA by Electron Beam Lithography ," Journal of Vacuum Science and Technology

Lithographic microfabrication of biocompatible polymers for tissue engineering and lab-on-a-chip applications

NASA Astrophysics Data System (ADS)

Balciunas, Evaldas; Jonusauskas, Linas; Valuckas, Vytautas; Baltriukiene, Daiva; Bukelskiene, Virginija; Gadonas, Roaldas; Malinauskas, Mangirdas

2012-06-01

In this work, a combination of Direct Laser Writing (DLW), PoliDiMethylSiloxane (PDMS) soft lithography and UV lithography was used to create cm- scale microstructured polymer scaolds for cell culture experiments out of dierent biocompatible materials: novel hybrid organic-inorganic SZ2080, PDMS elastomer, biodegradable PEG- DA-258 and SU-8. Rabbit muscle-derived stem cells were seeded on the fabricated dierent periodicity scaolds to evaluate if the relief surface had any eect on cell proliferation. An array of microlenses was fabricated using DLW out of SZ2080 and replicated in PDMS and PEG-DA-258, showing good potential applicability of the used techniques in many other elds like micro- and nano- uidics, photonics, and MicroElectroMechanical Systems (MEMS). The synergetic employment of three dierent fabrication techniques allowed to produce desired objects with low cost, high throughput and precision as well as use materials that are dicult to process by other means (PDMS and PEG-DA-258). DLW is a relatively slow fabrication method, since the object has to be written point-by-point. By applying PDMS soft lithography, we were enabled to replicate laser-fabricated scaolds for stem cell growth and micro-optical elements for lab-on-a-chip applications with high speed, low cost and good reproducible quality.

Controllable liquid colour-changing lenses with microfluidic channels for vision protection, camouflage and optical filtering based on soft lithography fabrication.

PubMed

Zhang, Min; Li, Songjing

2016-01-01

In this work, liquid colour-changing lenses for vision protection, camouflage and optical filtering are developed by circulating colour liquids through microfluidic channels on the lenses manually. Soft lithography technology is applied to fabricate the silicone liquid colour-changing layers with microfluidic channels on the lenses instead of mechanical machining. To increase the hardness and abrasion resistance of the silicone colour-changing layers on the lenses, proper fabrication parameters such as 6:1 (mass ration) mixing proportion and 100 °C curing temperature for 2 h are approved for better soft lithography process of the lenses. Meanwhile, a new surface treatment for the irreversible bonding of silicone colour-changing layer with optical resin (CR39) substrate lens by using 5 % (volume ratio) 3-Aminopropyltriethoxysilane solution is proposed. Vision protection, camouflage and optical filtering functions of the lenses are investigated with different designs of the channels and multi-layer structures. Each application can not only well achieve their functional demands, but also shows the advantages of functional flexibility, rapid prototyping and good controllability compared with traditional ways. Besides optometry, some other designs and applications of the lenses are proposed for potential utility in the future.

Direct-writing lithography using laser diode beam focused with single elliptical microlens

NASA Astrophysics Data System (ADS)

Hasan, Md. Nazmul; Haque, Muttahid-Ull; Trisno, Jonathan; Lee, Yung-Chun

2015-10-01

A lithography method is proposed for arbitrary patterning using an elliptically diverging laser diode beam focused with a single planoconvex elliptical microlens. Simulations are performed to model the propagation properties of the laser beam and to design the elliptical microlens, which has two different profiles in the x- and y-axis directions. The microlens is fabricated using an excimer laser dragging method and is then attached to the laser diode using double-sided optically cleared adhesive (OCA) tape. Notably, the use of OCA tape removes the need for a complicated alignment procedure and thus significantly reduces the assembly cost. The minimum focused spot of the laser diode beam is investigated by performing single-shot exposure tests on a photoresist (PR) layer. Finally, the practical feasibility of this lithography technique to generate an arbitrary pattern is demonstrated by dotted and continuous features through thin chromium layer deposition on PR and a metal lift-off process. The results show that the minimum feature size for the dotted patterns is around 6.23 μm, while the minimum linewidths for continuous patterns is 6.44 μm. In other words, the proposed focusing technique has significant potential for writing any arbitrary high-resolution pattern for applications like printed circuit board fabrication.

Laser microprocessing and nanoengineering of large-area functional micro/nanostructures

NASA Astrophysics Data System (ADS)

Tang, M.; Xie, X. Z.; Yang, J.; Chen, Z. C.; Xu, L.; Choo, Y. S.; Hong, M. H.

2011-12-01

Laser microprocessing and nanoengineering are of great interest to both scientists and engineers, since the inspired properties of functional micro/nanostructures over large areas can lead to numerous unique applications. Currently laser processing systems combined with high speed automation ensure the focused laser beam to process various materials at a high throughput and a high accuracy over large working areas. UV lasers are widely used in both laser microprocessing and nanoengineering. However by improving the processing methods, green pulsed laser is capable of replacing UV lasers to make high aspect ratio micro-grooves on fragile and transparent sapphire substrates. Laser micro-texturing can also tune the wetting property of metal surfaces from hydrophilic to super-hydrophobic at a contact angle of 161° without chemical coating. Laser microlens array (MLA) can split a laser beam into multiple laser beams and reduce the laser spot size down to sub-microns. It can be applied to fabricate split ring resonator (SRR) meta-materials for THz sensing, surface plasmonic resonance (SPR) structures for NIR and molding tools for soft lithography. Furthermore, laser interference lithography combined with thermal annealing can obtain a large area of sub-50nm nano-dot clusters used for SPR applications.

Study of nanoimprint lithography (NIL) for HVM of memory devices

NASA Astrophysics Data System (ADS)

Kono, Takuya; Hatano, Masayuki; Tokue, Hiroshi; Kobayashi, Kei; Suzuki, Masato; Fukuhara, Kazuya; Asano, Masafumi; Nakasugi, Tetsuro; Choi, Eun Hyuk; Jung, Wooyung

2017-03-01

A low cost alternative lithographic technology is desired to meet the decreasing feature size of semiconductor devices. Nano-imprint lithography (NIL) is one of the candidates for alternative lithographic technologies.[1][2][3] NIL has such advantages as good resolution, critical dimension (CD) uniformity and low line edge roughness (LER). On the other hand, the critical issues of NIL are defectivity, overlay, and throughput. In order to introduce NIL into the HVM, it is necessary to overcome these three challenges simultaneously.[4]-[12] In our previous study, we have reported a dramatic improvement in NIL process defectivity on a pilot line tool, FPA-1100 NZ2. We have described that the NIL process for 2x nm half pitch is getting closer to the target of HVM.[12] In this study, we report the recent evaluation of the NIL process performance to judge the applicability of NIL to memory device fabrications. In detail, the CD uniformity and LER are found to be less than 2nm. The overlay accuracy of the test device is less than 7nm. A defectivity level of below 1pcs./cm2 has been achieved at a throughput of 15 wafers per hour.

Fluid management in roll-to-roll nanoimprint lithography

NASA Astrophysics Data System (ADS)

Jain, A.; Bonnecaze, R. T.

2013-06-01

The key process parameters of UV roll-to-roll nanoimprint lithography are identified from an analysis of the fluid, curing, and peeling dynamics. The process includes merging of droplets of imprint material, curing of the imprint material from a viscous liquid to elastic solid resist, and pattern replication and detachment of the resist from template. The time and distances on the web or rigid substrate over which these processes occur are determined as function of the physical properties of the uncured liquid, the cured solid, and the roller configuration. The upper convected Maxwell equation is used to model the viscoelastic liquid and to calculate the force on the substrate and the torque on the roller. The available exposure time is found to be the rate limiting parameter and it is O(√Rho /uo), where R is the radius of the roller, ho is minimum gap between the roller and web, and uo is the velocity of the web. The residual layer thickness of the resist should be larger than the gap between the roller and the substrate to ensure complete feature filling and optimal pattern replication. For lower residual layer thickness, the droplets may not merge to form a continuous film for pattern transfer.

EXPERIMENTS IN LITHOGRAPHY FROM REMOTE SENSOR IMAGERY.

USGS Publications Warehouse

Kidwell, R. H.; McSweeney, J.; Warren, A.; Zang, E.; Vickers, E.

1983-01-01

Imagery from remote sensing systems such as the Landsat multispectral scanner and return beam vidicon, as well as synthetic aperture radar and conventional optical camera systems, contains information at resolutions far in excess of that which can be reproduced by the lithographic printing process. The data often require special handling to produce both standard and special map products. Some conclusions have been drawn regarding processing techniques, procedures for production, and printing limitations.

Directional photofluidization lithography: micro/nanostructural evolution by photofluidic motions of azobenzene materials.

PubMed

Lee, Seungwoo; Kang, Hong Suk; Park, Jung-Ki

2012-04-24

This review demonstrates directional photofluidization lithography (DPL), which makes it possible to fabricate a generic and sophisticated micro/nanoarchitecture that would be difficult or impossible to attain with other methods. In particular, DPL differs from many of the existing micro/nanofabrication methods in that the post-treatment (i.e., photofluidization), after the preliminary fabrication process of the original micro/nanostructures, plays a pivotal role in the various micro/nanostructural evolutions including the deterministic reshaping of architectures, the reduction of structural roughness, and the dramatic enhancement of pattern resolution. Also, DPL techniques are directly compatible with a parallel and scalable micro/nanofabrication. Thus, DPL with such extraordinary advantages in micro/nanofabrication could provide compelling opportunities for basic micro/nanoscale science as well as for general technology applications. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photoresist composition for extreme ultraviolet lithography

DOEpatents

Felter, T. E.; Kubiak, G. D.

1999-01-01

A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods. A photoresist composition for extreme ultraviolet radiation of boron carbide polymers, hydrochlorocarbons and mixtures thereof.

Simulation of Patterned Glass Film Formation in the Evaporating Colloidal Liquid under IR Heating

NASA Astrophysics Data System (ADS)

Kolegov, K. S.

2018-02-01

The paper theoretically studies the method of evaporative lithography in combination with external infrared heating. This method makes it possible to form solid microstructures of the required relief shape as a result of evaporation of the liquid film of the colloidal solution under the mask. The heated particles are sintered easier, so there are no cracks in the obtained structure, unlike the structure obtained employing the standard method of evaporative lithography. The paper puts forward a modification of the mathematical model which allows to describe not only heat and mass transfer at the initial stage of the process, but also the phase transition of colloidal solution into glass. Aqueous latex is taken as an example. The resulting final form of solid film is in good agreement with the experimental data of other authors.

Soft lithography of ceramic microparts using wettability-tunable poly(dimethylsiloxane) (PDMS) molds

NASA Astrophysics Data System (ADS)

Su, Bo; Zhang, Aijun; Meng, Junhu; Zhang, Zhaozhu

2016-07-01

Green alumina microparts were fabricated from a high solid content aqueous suspension by microtransfer molding using air plasma-treated poly(dimethylsiloxane) (PDMS) molds. The wettability of the air plasma-treated PDMS molds spontaneously changed between the hydrophilic and hydrophobic states during the process. Initial hydrophilicity of the air plasma-treated PDMS molds significantly improved the flowability of the concentrated suspension. Subsequent hydrophobic recovery of the air plasma-treated PDMS molds enabled a perfect demolding of the green microparts. Consequently, defect-free microchannel parts of 60 μm and a micromixer with an area of several square centimeters were successfully fabricated. In soft lithography, tuning the wetting behavior of PDMS molds has a great effect on the quality of ceramic microparts. Using wettability-tunable PDMS molds has great potential in producing complex-shaped and large-area ceramic microparts and micropatterns.

Polystyrene negative resist for high-resolution electron beam lithography

PubMed Central

2011-01-01

We studied the exposure behavior of low molecular weight polystyrene as a negative tone electron beam lithography (EBL) resist, with the goal of finding the ultimate achievable resolution. It demonstrated fairly well-defined patterning of a 20-nm period line array and a 15-nm period dot array, which are the densest patterns ever achieved using organic EBL resists. Such dense patterns can be achieved both at 20 and 5 keV beam energies using different developers. In addition to its ultra-high resolution capability, polystyrene is a simple and low-cost resist with easy process control and practically unlimited shelf life. It is also considerably more resistant to dry etching than PMMA. With a low sensitivity, it would find applications where negative resist is desired and throughput is not a major concern. PMID:21749679

Solving the shrinkage-induced PDMS alignment registration issue in multilayer soft lithography

NASA Astrophysics Data System (ADS)

Moraes, Christopher; Sun, Yu; Simmons, Craig A.

2009-06-01

Shrinkage of polydimethylsiloxane (PDMS) complicates alignment registration between layers during multilayer soft lithography fabrication. This often hinders the development of large-scale microfabricated arrayed devices. Here we report a rapid method to construct large-area, multilayered devices with stringent alignment requirements. This technique, which exploits a previously unrecognized aspect of sandwich mold fabrication, improves device yield, enables highly accurate alignment over large areas of multilayered devices and does not require strict regulation of fabrication conditions or extensive calibration processes. To demonstrate this technique, a microfabricated Braille display was developed and characterized. High device yield and accurate alignment within 15 µm were achieved over three layers for an array of 108 Braille units spread over a 6.5 cm2 area, demonstrating the fabrication of well-aligned devices with greater ease and efficiency than previously possible.

Window-assisted nanosphere lithography for vacuum micro-nano-electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Nannan; Institute of Electronic Engineering, Chinese Academy of Engineering Physics, Mianyang, 621900; Pang, Shucai

2015-04-15

Development of vacuum micro-nano-electronics is quite important for combining the advantages of vacuum tubes and solid-state devices but limited by the prevailing fabricating techniques which are expensive, time consuming and low-throughput. In this work, window-assisted nanosphere lithography (NSL) technique was proposed and enabled the low-cost and high-efficiency fabrication of nanostructures for vacuum micro-nano-electronic devices, thus allowing potential applications in many areas. As a demonstration, we fabricated high-density field emitter arrays which can be used as cold cathodes in vacuum micro-nano-electronic devices by using the window-assisted NSL technique. The details of the fabricating process have been investigated. This work provided amore » new and feasible idea for fabricating nanostructure arrays for vacuum micro-nano-electronic devices, which would spawn the development of vacuum micro-nano-electronics.« less

Fabrication of high-density In3Sb1Te2 phase change nanoarray on glass-fabric reinforced flexible substrate

NASA Astrophysics Data System (ADS)

Yoon, Jong Moon; Shin, Dong Ok; Yin, You; Seo, Hyeon Kook; Kim, Daewoon; In Kim, Yong; Jin, Jung Ho; Kim, Yong Tae; Bae, Byeong-Soo; Ouk Kim, Sang; Lee, Jeong Yong

2012-06-01

Mushroom-shaped phase change memory (PCM) consisting of a Cr/In3Sb1Te2 (IST)/TiN (bottom electrode) nanoarray was fabricated via block copolymer lithography and single-step dry etching with a gas mixture of Ar/Cl2. The process was performed on a high performance transparent glass-fabric reinforced composite film (GFR Hybrimer) suitable for use as a novel substrate for flexible devices. The use of GFR Hybrimer with low thermal expansion and flat surfaces enabled successful nanoscale patterning of functional phase change materials on flexible substrates. Block copolymer lithography employing asymmetrical block copolymer blends with hexagonal cylindrical self-assembled morphologies resulted in the creation of hexagonal nanoscale PCM cell arrays with an areal density of approximately 176 Gb/in2.

Reducing Line Edge Roughness in Si and SiN through plasma etch chemistry optimization for photonic waveguide applications

NASA Astrophysics Data System (ADS)

Marchack, Nathan; Khater, Marwan; Orcutt, Jason; Chang, Josephine; Holmes, Steven; Barwicz, Tymon; Kamlapurkar, Swetha; Green, William; Engelmann, Sebastian

2017-03-01

The LER and LWR of subtractively patterned Si and SiN waveguides was calculated after each step in the process. It was found for Si waveguides that adjusting the ratio of CF4:CHF3 during the hard mask open step produced reductions in LER of 26 and 43% from the initial lithography for isolated waveguides patterned with partial and full etches, respectively. However for final LER values of 3.0 and 2.5 nm on fully etched Si waveguides, the corresponding optical loss measurements were indistinguishable. For SiN waveguides, introduction of C4H9F to the conventional CF4/CHF3 measurement was able to reduce the mask height budget by a factor of 5, while reducing LER from the initial lithography by 26%.

ILT for double exposure lithography with conventional and novel materials

NASA Astrophysics Data System (ADS)

Poonawala, Amyn; Borodovsky, Yan; Milanfar, Peyman

2007-03-01

Multiple paths exists to provide lithography solutions pursuant to Moore's Law for next 3-5 generations of technology, yet each of those paths inevitably leads to solutions eventually requiring patterning at k I < 0.30 and below. In this article, we explore double exposure single development lithography for k I >= 0.25 (using conventional resist) and k1 < 0.25 (using new out-of-sight out-of-mind materials). For the case of k I >= 0.25, we propose a novel double exposure inverse lithography technique (ILT) to split the pattern. Our algorithm is based on our earlier proposed single exposure ILT framework, and works by decomposing the aerial image (instead of the target pattern) into two parts. It also resolves the phase conflicts automatically as part of the decomposition, and the combined aerial image obtained using the estimated masks has a superior contrast. For the case of k I < 0.25, we focus on analyzing the use of various dual patterning techniques enabled by the use of hypothetic materials with properties that allow for the violation of the linear superposition of intensities from the two exposures. We investigate the possible use of two materials: contrast enhancement layer (CEL) and two-photon absorption resists. We propose a mathematical model for CEL, define its characteristic properties, and derive fundamental bounds on the improvement in image log-slope. Simulation results demonstrate that double exposure single development lithography using CEL enables printing 80nm gratings using dry lithography. We also combine ILT, CEL, and DEL to synthesize 2-D patterns with k I = 0.185. Finally, we discuss the viability of two-photon absorption resists for double exposure lithography.

Multi-shaped beam: development status and update on lithography results

NASA Astrophysics Data System (ADS)

Slodowski, Matthias; Doering, Hans-Joachim; Dorl, Wolfgang; Stolberg, Ines A.

2011-04-01

According to the ITRS [1] photo mask is a significant challenge for the 22nm technology node requirements and beyond. Mask making capability and cost escalation continue to be critical for future lithography progress. On the technological side mask specifications and complexity have increased more quickly than the half-pitch requirements on the wafer designated by the roadmap due to advanced optical proximity correction and double patterning demands. From the economical perspective mask costs have significantly increased each generation, in which mask writing represents a major portion. The availability of a multi-electron-beam lithography system for mask write application is considered a potential solution to overcome these challenges [2, 3]. In this paper an update of the development status of a full-package high-throughput multi electron-beam writer, called Multi Shaped Beam (MSB), will be presented. Lithography performance results, which are most relevant for mask writing applications, will be disclosed. The MSB technology is an evolutionary development of the matured single Variable Shaped Beam (VSB) technology. An arrangement of Multi Deflection Arrays (MDA) allows operation with multiple shaped beams of variable size, which can be deflected and controlled individually [4]. This evolutionary MSB approach is associated with a lower level of risk and a relatively short time to implementation compared to the known revolutionary concepts [3, 5, 6]. Lithography performance is demonstrated through exposed pattern. Further details of the substrate positioning platform performance will be disclosed. It will become apparent that the MSB operational mode enables lithography on the same and higher performance level compared to single VSB and that there are no specific additional lithography challenges existing beside those which have already been addressed [1].

Impact of polymer film thickness and cavity size on polymer flow during embossing : towards process design rules for nanoimprint lithography.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schunk, Peter Randall; King, William P.; Sun, Amy Cha-Tien

2006-08-01

This paper presents continuum simulations of polymer flow during nanoimprint lithography (NIL). The simulations capture the underlying physics of polymer flow from the nanometer to millimeter length scale and examine geometry and thermophysical process quantities affecting cavity filling. Variations in embossing tool geometry and polymer film thickness during viscous flow distinguish different flow driving mechanisms. Three parameters can predict polymer deformation mode: cavity width to polymer thickness ratio, polymer supply ratio, and Capillary number. The ratio of cavity width to initial polymer film thickness determines vertically or laterally dominant deformation. The ratio of indenter width to residual film thickness measuresmore » polymer supply beneath the indenter which determines Stokes or squeeze flow. The local geometry ratios can predict a fill time based on laminar flow between plates, Stokes flow, or squeeze flow. Characteristic NIL capillary number based on geometry-dependent fill time distinguishes between capillary or viscous driven flows. The three parameters predict filling modes observed in published studies of NIL deformation over nanometer to millimeter length scales. The work seeks to establish process design rules for NIL and to provide tools for the rational design of NIL master templates, resist polymers, and process parameters.« less

Prewarping techniques in imaging: applications in nanotechnology and biotechnology

NASA Astrophysics Data System (ADS)

Poonawala, Amyn; Milanfar, Peyman

2005-03-01

In all imaging systems, the underlying process introduces undesirable distortions that cause the output signal to be a warped version of the input. When the input to such systems can be controlled, pre-warping techniques can be employed which consist of systematically modifying the input such that it cancels out (or compensates for) the process losses. In this paper, we focus on the mask (reticle) design problem for 'optical micro-lithography', a process similar to photographic printing used for transferring binary circuit patterns onto silicon wafers. We use a pixel-based mask representation and model the above process as a cascade of convolution (aerial image formation) and thresholding (high-contrast recording) operations. The pre-distorted mask is obtained by minimizing the norm of the difference between the 'desired' output image and the 'reproduced' output image. We employ the regularization framework to ensure that the resulting masks are close-to-binary as well as simple and easy to fabricate. Finally, we provide insight into two additional applications of pre-warping techniques. First is 'e-beam lithography', used for fabricating nano-scale structures, and second is 'electronic visual prosthesis' which aims at providing limited vision to the blind by using a prosthetic retinally implanted chip capable of electrically stimulating the retinal neuron cells.

Electron beam mask writer EBM-9500 for logic 7nm node generation

NASA Astrophysics Data System (ADS)

Matsui, Hideki; Kamikubo, Takashi; Nakahashi, Satoshi; Nomura, Haruyuki; Nakayamada, Noriaki; Suganuma, Mizuna; Kato, Yasuo; Yashima, Jun; Katsap, Victor; Saito, Kenichi; Kobayashi, Ryoei; Miyamoto, Nobuo; Ogasawara, Munehiro

2016-10-01

Semiconductor scaling is slowing down because of difficulties of device manufacturing below logic 7nm node generation. Various lithography candidates which include ArF immersion with resolution enhancement technology (like Inversed Lithography technology), Extreme Ultra Violet lithography and Nano Imprint lithography are being developed to address the situation. In such advanced lithography, shot counts of mask patterns are estimated to increase explosively in critical layers, and then it is hoped that multi beam mask writer (MBMW) is released to handle them within realistic write time. However, ArF immersion technology with multiple patterning will continue to be a mainstream lithography solution for most of the layers. Then, the shot counts in less critical layers are estimated to be stable because of the limitation of resolution in ArF immersion technology. Therefore, single beam mask writer (SBMW) can play an important role for mask production still, relative to MBMW. Also the demand of SBMW seems actually strong for the logic 7nm node. To realize this, we have developed a new SBMW, EBM-9500 for mask fabrication in this generation. A newly introduced electron beam source enables higher current density of 1200A/cm2. Heating effect correction function has also been newly introduced to satisfy the requirements for both pattern accuracy and throughput. In this paper, we will report the configuration and performance of EBM-9500.

The partial coherence modulation transfer function in testing lithography lens

NASA Astrophysics Data System (ADS)

Huang, Jiun-Woei

2018-03-01

Due to the lithography demanding high performance in projection of semiconductor mask to wafer, the lens has to be almost free in spherical and coma aberration, thus, in situ optical testing for diagnosis of lens performance has to be established to verify the performance and to provide the suggesting for further improvement of the lens, before the lens has been build and integrated with light source. The measurement of modulation transfer function of critical dimension (CD) is main performance parameter to evaluate the line width of semiconductor platform fabricating ability for the smallest line width of producing tiny integrated circuits. Although the modulation transfer function (MTF) has been popularly used to evaluation the optical system, but in lithography, the contrast of each line-pair is in one dimension or two dimensions, analytically, while the lens stand along in the test bench integrated with the light source coherent or near coherent for the small dimension near the optical diffraction limit, the MTF is not only contributed by the lens, also by illumination of platform. In the study, the partial coherence modulation transfer function (PCMTF) for testing a lithography lens is suggested by measuring MTF in the high spatial frequency of in situ lithography lens, blended with the illumination of partial and in coherent light source. PCMTF can be one of measurement to evaluate the imperfect lens of lithography lens for further improvement in lens performance.

Mastering multi-depth bio-chip patterns with DVD LBRs

NASA Astrophysics Data System (ADS)

Carson, Doug

2017-08-01

Bio chip and bio disc are rapidly growing technologies used in medical, health and other industries. While there are numerous unique designs and features, these products all rely on precise three-dimensional micro-fluidic channels or arrays to move, separate and combine samples under test. These bio chip and bio disc consumables are typically manufactured by molding these parts to a precise three-dimensional pattern on a negative metal stamper, or they can be made in smaller quantities using an appropriate curable resin and a negative mold/stamper. Stampers required for bio chips have been traditionally made using either micro machining or XY stepping lithography. Both of these technologies have their advantages as well as limitations when it comes to creating micro-fluidic patterns. Significant breakthroughs in continuous maskless lithography have enabled accurate and efficient manufacturing of micro-fluidic masters using LBRs (Laser Beam Recorders) and DRIE (Deep Reactive Ion Etching). The important advantages of LBR continuous lithography vs. XY stepping lithography and micro machining are speed and cost. LBR based continuous lithography is >100x faster than XY stepping lithography and more accurate than micro machining. Several innovations were required in order to create multi-depth patterns with sub micron accuracy. By combining proven industrial LBRs with DCA's G3-VIA pattern generator and DRIE, three-dimensional bio chip masters and stampers are being manufactured efficiently and accurately.

Pushing the plasmonic imaging nanolithography to nano-manufacturing

NASA Astrophysics Data System (ADS)

Gao, Ping; Li, Xiong; Zhao, Zeyu; Ma, Xiaoliang; Pu, Mingbo; Wang, Changtao; Luo, Xiangang

2017-12-01

Suffering from the so-called diffraction limit, the minimum resolution of conventional photolithography is limited to λ / 2 or λ / 4, where λ is the incident wavelength. The physical mechanism of this limit lies at the fact that the evanescent waves that carry subwavelength information of the object decay exponentially in a medium, and cannot reach the image plane. Surface plasmons (SPs) are non-radiative electromagnetic waves that propagate along the interface between metal and dielectric, which exhibits unique sub-diffraction optical characteristics. In recent years, benefiting from SPs' features, researchers have proposed a variety of plasmonic lithography methods in the manner of interference, imaging and direct writing, and have demonstrated that sub-diffraction resolution could be achieved by theoretical simulations or experiments. Among the various plasmonic lithography modes, plasmonic imaging lithography seems to be of particular importance for applications due to its compatibility with conventional lithography. Recent results show that the half pitch of nanograting can be shrinked down to 22 nm and even 16 nm. This paper will give an overview of research progress, representative achievements of plasmonic imaging lithography, the remained problems and outlook of further developments.

Rapid fabrication of microfluidic chips based on the simplest LED lithography

NASA Astrophysics Data System (ADS)

Li, Yue; Wu, Ping; Luo, Zhaofeng; Ren, Yuxuan; Liao, Meixiang; Feng, Lili; Li, Yuting; He, Liqun

2015-05-01

Microfluidic chips are generally fabricated by a soft lithography method employing commercial lithography equipment. These heavy machines require a critical room environment and high lamp power, and the cost remains too high for most normal laboratories. Here we present a novel microfluidics fabrication method utilizing a portable ultraviolet (UV) LED as an alternative UV source for photolithography. With this approach, we can repeat several common microchannels as do these conventional commercial exposure machines, and both the verticality of the channel sidewall and lithography resolution are proved to be acceptable. Further microfluidics applications such as mixing, blood typing and microdroplet generation are implemented to validate the practicability of the chips. This simple but innovative method decreases the cost and requirement of chip fabrication dramatically and may be more popular with ordinary laboratories.

MAGIC: a European program to push the insertion of maskless lithography

NASA Astrophysics Data System (ADS)

Pain, L.; Icard, B.; Tedesco, S.; Kampherbeek, B.; Gross, G.; Klein, C.; Loeschner, H.; Platzgummer, E.; Morgan, R.; Manakli, S.; Kretz, J.; Holhe, C.; Choi, K.-H.; Thrum, F.; Kassel, E.; Pilz, W.; Keil, K.; Butschke, J.; Irmscher, M.; Letzkus, F.; Hudek, P.; Paraskevopoulos, A.; Ramm, P.; Weber, J.

2008-03-01

With the willingness of the semiconductor industry to push manufacturing costs down, the mask less lithography solution represents a promising option to deal with the cost and complexity concerns about the optical lithography solution. Though a real interest, the development of multi beam tools still remains in laboratory environment. In the frame of the seventh European Framework Program (FP7), a new project, MAGIC, started January 1st 2008 with the objective to strengthen the development of the mask less technology. The aim of the program is to develop multi beam systems from MAPPER and IMS nanofabrication technologies and the associated infrastructure for the future tool usage. This paper draws the present status of multi beam lithography and details the content and the objectives of the MAGIC project.

Indus-2 X-ray lithography beamline for X-ray optics and material science applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dhamgaye, V. P., E-mail: vishal@rrcat.gov.in; Lodha, G. S., E-mail: vishal@rrcat.gov.in

2014-04-24

X-ray lithography is an ideal technique by which high aspect ratio and high spatial resolution micro/nano structures are fabricated using X-rays from synchrotron radiation source. The technique has been used for fabricating optics (X-ray, visible and infrared), sensors and actuators, fluidics and photonics. A beamline for X-ray lithography is operational on Indus-2. The beamline offers wide lithographic window from 1-40keV photon energy and wide beam for producing microstructures in polymers upto size ∼100mm × 100mm. X-ray exposures are possible in air, vacuum and He gas environment. The air based exposures enables the X-ray irradiation of resist for lithography and alsomore » irradiation of biological and liquid samples.« less

Electron-beam lithography for micro and nano-optical applications

NASA Technical Reports Server (NTRS)

Wilson, Daniel W.; Muller, Richard E.; Echternach, Pierre M.

2005-01-01

Direct-write electron-beam lithography has proven to be a powerful technique for fabricating a variety of micro- and nano-optical devices. Binary E-beam lithography is the workhorse technique for fabricating optical devices that require complicated precision nano-scale features. We describe a bi-layer resist system and virtual-mark height measurement for improving the reliability of fabricating binary patterns. Analog E-beam lithography is a newer technique that has found significant application in the fabrication of diffractive optical elements. We describe our techniques for fabricating analog surface-relief profiles in E-beam resist, including some discussion regarding overcoming the problems of resist heating and charging. We also describe a multiple-field-size exposure scheme for suppression of field-stitch induced ghost diffraction orders produced by blazed diffraction gratings on non-flat substrates.

Tunable cw Single-Frequency Source for Injection Seeding 2-micrometer Lasers

DTIC Science & Technology

1990-06-01

Nd:glass Slab Asilomar, CA, January, 1989. Laser for X-ray Lithography ," presented at Lasers 11. R. L. Byer, "Solid State Lasers for Accelerator 89, New...Alumni Association (Stanford Club of M.K. Reed and R.L. Byer, "A Nd:glass Slab Connecticut), April, 1989. Laserfor X-ray Lithography ," to be...and R.L. Byer, "A Nd:Glass Slab asymmetric quantum wells," invited paper QWA1 Laser for Soft X-ray Lithography ", paper MB4, International Quantum

High-resolution nanopatterning of biodegradable polylactide by thermal nanoimprint lithography using gas permeable mold

NASA Astrophysics Data System (ADS)

Takei, Satoshi; Hanabata, Makoto

2017-03-01

We report high-resolution (150 nm) nanopatterning of biodegradable polylactide by thermal nanoimprint lithography using dichloromethane as a volatile solvent for improving the liquidity and a porous cyclodextrin-based gas-permeable mold. This study demonstrates the high-resolution patterning of polylactic acid and other non-liquid functional materials with poor fluidity by thermal nanoimprinting. Such a patterning is expected to expand the utility of thermal nanoimprint lithography and fabricate non-liquid functional materials suitable for eco-friendly and biomedical applications.

Nanolayered microlenses in theory and practice

NASA Astrophysics Data System (ADS)

Crescimanno, Michael; Andrews, James; Oder, Tom; Zhou, Chuanhong; Merlo, Cory; Hetzel, Connor; Bagheri, Cameron; Petrus, Joshua; Mazzocco, Anthony

2014-05-01

Co-extruded layered polymer films with structurally designed optical dispersion are used as ``blanks'' from which micro lenses have been fabricated using grey-scale photo-lithography followed by plasma etching. We describe the materials and processing as well as techniques used to characterize the micro lenses and the physical optics theory used to model their measured behavior.

Lithography of Polymer Nanostructures on Glass for Teaching Polymer Chemistry and Physics

ERIC Educational Resources Information Center

Sahar-Halbany, Adi; Vance, Jennifer M.; Drain, Charles Michael

2011-01-01

As nanolithography becomes increasingly important in technology and daily life, a variety of inexpensive and creative methods toward communicating the concepts underpinning these processes in the classroom are necessary. An experiment is described that uses simple CD-Rs, C-clamps, an oven, and a freezer to provide concrete examples and insights…

Electronics Devices and Materials

DTIC Science & Technology

2008-03-17

Molecular -bea epitaxy MCNPX ............... Software code Misse6 ................. Satellite expected to carry ORMatE-I Misse7...patterning using electron beam lithography), spaces (class 1000 clean benches), and skills (appropriate mix of skilled technicians and professionals...34 Process samples for various projects such as Antimode Base High Electron Mobility Transistors ( HEMT ) and Double Heterojuction Bipolar Transistors

A Molecular- and Nano-Electronics Test (MONET) platform fabricated using extreme ultraviolet lithography.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dentinger, Paul M.; Cardinale, Gregory F.; Hunter, Luke L.

2003-12-01

We describe the fabrication and characterization of an electrode array test structure, designed for electrical probing of molecules and nanocrystals. We use Extreme Ultraviolet Lithography (EUVL) to define the electrical test platform features. As fabricated, the platform includes nominal electrode gaps of 0 nm, 40 nm, 60 nm, and 80 nm. Additional variation in electrode gap is achieved by controlling the exposure conditions, such as dose and focus. To enable EUVL based nanofabrication, we develop a novel bi-level photoresist process. The bi-level photoresist consists of a combination of a commercially available polydimethylglutarimide (PMGI) bottom layer and an experimental EUVL photoresistmore » top (imaging) layer. We measure the sensitivity of PMGI to EUV exposure dose as a function of photoresist pre-bake temperature, and using this data, optimize a metal lift-off process. Reliable fabrication of 700 Angstrom thick Au structures with sub-1000 Angstrom critical dimensions is achieved, even without the use of a Au adhesion layer, such as Ti. Several test platforms are used to characterize electrical properties of organic molecules deposited as self assembled monolayers.« less

Print-to-pattern dry film photoresist lithography

NASA Astrophysics Data System (ADS)

Garland, Shaun P.; Murphy, Terrence M., Jr.; Pan, Tingrui

2014-05-01

Here we present facile microfabrication processes, referred to as print-to-pattern dry film photoresist (DFP) lithography, that utilize the combined advantages of wax printing and DFP to produce micropatterned substrates with high resolution over a large surface area in a non-cleanroom setting. The print-to-pattern methods can be performed in an out-of-cleanroom environment making microfabrication much more accessible to minimally equipped laboratories. Two different approaches employing either wax photomasks or wax etchmasks from a solid ink desktop printer have been demonstrated that allow the DFP to be processed in a negative tone or positive tone fashion, respectively, with resolutions of 100 µm. The effect of wax melting on resolution and as a bonding material was also characterized. In addition, solid ink printers have the capacity to pattern large areas with high resolution, which was demonstrated by stacking DFP layers in a 50 mm × 50 mm woven pattern with 1 mm features. By using an office printer to generate the masking patterns, the mask designs can be easily altered in a graphic user interface to enable rapid prototyping.

Theoretical Analysis on Mechanical Deformation of Membrane-Based Photomask Blanks

NASA Astrophysics Data System (ADS)

Marumoto, Kenji; Aya, Sunao; Yabe, Hedeki; Okada, Tatsunori; Sumitani, Hiroaki

2012-04-01

Membrane-based photomask is used in proximity X-ray lithography including that in LIGA (Lithographie, Galvanoformung und Abformung) process, and near-field photolithography. In this article, out-of-plane deformation (OPD) and in-plane displacement (IPD) of membrane-based photomask blanks are theoretically analyzed to obtain the mask blanks with flat front surface and low stress absorber film. First, we derived the equations of OPD and IPD for the processing steps of membrane-based photomask such as film deposition, back-etching and bonding, using a theory of symmetrical bending of circular plates with a coaxial circular hole and that of deformation of cylinder under hydrostatic pressure. The validity of the equations was proved by comparing the calculation results with experimental ones. Using these equations, we investigated the relation between the geometry of the mask blanks and the distortions generally, and gave the criterion to attain the flat front surface. Moreover, the absorber stress-bias required to obtain zero-stress on finished mask blanks was also calculated and it has been found that only little stress-bias was required for adequate hole size of support plate.

Evaluation of hybrid polymers for high-precision manufacturing of 3D optical interconnects by two-photon absorption lithography

NASA Astrophysics Data System (ADS)

Schleunitz, A.; Klein, J. J.; Krupp, A.; Stender, B.; Houbertz, R.; Gruetzner, G.

2017-02-01

The fabrication of optical interconnects has been widely investigated for the generation of optical circuit boards. Twophoton absorption (TPA) lithography (or high-precision 3D printing) as an innovative production method for direct manufacture of individual 3D photonic structures gains more and more attention when optical polymers are employed. In this regard, we have evaluated novel ORMOCER-based hybrid polymers tailored for the manufacture of optical waveguides by means of high-precision 3D printing. In order to facilitate future industrial implementation, the processability was evaluated and the optical performance of embedded waveguides was assessed. The results illustrate that hybrid polymers are not only viable consumables for industrial manufacture of polymeric micro-optics using generic processes such as UV molding. They also are potential candidates to fabricate optical waveguide systems down to the chip level where TPA-based emerging manufacturing techniques are engaged. Hence, it is shown that hybrid polymers continue to meet the increasing expectations of dynamically growing markets of micro-optics and optical interconnects due to the flexibility of the employed polymer material concept.

Interactions of double patterning technology with wafer processing, OPC and design flows

NASA Astrophysics Data System (ADS)

Lucas, Kevin; Cork, Chris; Miloslavsky, Alex; Luk-Pat, Gerry; Barnes, Levi; Hapli, John; Lewellen, John; Rollins, Greg; Wiaux, Vincent; Verhaegen, Staf

2008-03-01

Double patterning technology (DPT) is one of the main options for printing logic devices with half-pitch less than 45nm; and flash and DRAM memory devices with half-pitch less than 40nm. DPT methods decompose the original design intent into two individual masking layers which are each patterned using single exposures and existing 193nm lithography tools. The results of the individual patterning layers combine to re-create the design intent pattern on the wafer. In this paper we study interactions of DPT with lithography, masks synthesis and physical design flows. Double exposure and etch patterning steps create complexity for both process and design flows. DPT decomposition is a critical software step which will be performed in physical design and also in mask synthesis. Decomposition includes cutting (splitting) of original design intent polygons into multiple polygons where required; and coloring of the resulting polygons. We evaluate the ability to meet key physical design goals such as: reduce circuit area; minimize rework; ensure DPT compliance; guarantee patterning robustness on individual layer targets; ensure symmetric wafer results; and create uniform wafer density for the individual patterning layers.

Electrical properties of sub-100 nm SiGe nanowires

NASA Astrophysics Data System (ADS)

Hamawandi, B.; Noroozi, M.; Jayakumar, G.; Ergül, A.; Zahmatkesh, K.; Toprak, M. S.; Radamson, H. H.

2016-10-01

In this study, the electrical properties of SiGe nanowires in terms of process and fabrication integrity, measurement reliability, width scaling, and doping levels were investigated. Nanowires were fabricated on SiGe-on oxide (SGOI) wafers with thickness of 52 nm and Ge content of 47%. The first group of SiGe wires was initially formed by using conventional I-line lithography and then their size was longitudinally reduced by cutting with a focused ion beam (FIB) to any desired nanometer range down to 60 nm. The other nanowire group was manufactured directly to a chosen nanometer level by using sidewall transfer lithography (STL). It has been shown that the FIB fabrication process allows manipulation of the line width and doping level of nanowires using Ga atoms. The resistance of wires thinned by FIB was 10 times lower than STL wires which shows the possible dependency of electrical behavior on fabrication method. Project support by the Swedish Foundation for Strategic Research “SSF” (No. EM-011-0002) and the Scientific and Technological Research Council of Turkey (No. TÜBİTAK).

Effect of SPM-based cleaning POR on EUV mask performance

NASA Astrophysics Data System (ADS)

Choi, Jaehyuck; Lee, Han-shin; Yoon, Jinsang; Shimomura, Takeya; Friz, Alex; Montgomery, Cecilia; Ma, Andy; Goodwin, Frank; Kang, Daehyuk; Chung, Paul; Shin, Inkyun; Cho, H.

2011-11-01

EUV masks include many different layers of various materials rarely used in optical masks, and each layer of material has a particular role in enhancing the performance of EUV lithography. Therefore, it is crucial to understand how the mask quality and patterning performance can change during mask fabrication, EUV exposure, maintenance cleaning, shipping, or storage. The fact that a pellicle is not used to protect the mask surface in EUV lithography suggests that EUV masks may have to undergo more cleaning cycles during their lifetime. More frequent cleaning, combined with the adoption of new materials for EUV masks, necessitates that mask manufacturers closely examine the performance change of EUV masks during cleaning process. We have investigated EUV mask quality and patterning performance during 30 cycles of Samsung's EUV mask SPM-based cleaning and 20 cycles of SEMATECH ADT exposure. We have observed that the quality and patterning performance of EUV masks does not significantly change during these processes except mask pattern CD change. To resolve this issue, we have developed an acid-free cleaning POR and substantially improved EUV mask film loss compared to the SPM-based cleaning POR.

SEM contour based metrology for microlens process studies in CMOS image sensor technologies

NASA Astrophysics Data System (ADS)

Lakcher, Amine; Ostrovsky, Alain; Le-Gratiet, Bertrand; Berthier, Ludovic; Bidault, Laurent; Ducoté, Julien; Jamin-Mornet, Clémence; Mortini, Etienne; Besacier, Maxime

2018-03-01

From the first digital cameras which appeared during the 70s to cameras of current smartphones, image sensors have undergone significant technological development in the last decades. The development of CMOS image sensor technologies in the 90s has been the main driver of the recent progresses. The main component of an image sensor is the pixel. A pixel contains a photodiode connected to transistors but only the photodiode area is light sensitive. This results in a significant loss of efficiency. To solve this issue, microlenses are used to focus the incident light on the photodiode. A microlens array is made out of a transparent material and has a spherical cap shape. To obtain this spherical shape, a lithography process is performed to generate resist blocks which are then annealed above their glass transition temperature (reflow). Even if the dimensions to consider are higher than in advanced IC nodes, microlenses are sensitive to process variability during lithography and reflow. A good control of the microlens dimensions is key to optimize the process and thus the performance of the final product. The purpose of this paper is to apply SEM contour metrology [1, 2, 3, 4] to microlenses in order to develop a relevant monitoring methodology and to propose new metrics to engineers to evaluate their process or optimize the design of the microlens arrays.

Gap Fill Materials Using Cyclodextrin Derivatives in ArF Lithography

NASA Astrophysics Data System (ADS)

Takei, Satoshi; Shinjo, Tetsuya; Sakaida, Yasushi; Hashimoto, Keisuke

2007-11-01

High planarizing gap fill materials based on β-cyclodextrin in ArF photoresist under-layer materials have been developed for fast etching in CF4 gas. Gap fill materials used in the via-first dual damascene process need to have high etch rates to prevent crowning or fencing on top of the trench after etching and a small thickness bias between the dense and blanket areas to minimize issues observed during trench lithography by narrowing the process latitude. Cyclodextrin is a circular oligomer with a nanoscale porous structure that has a high number of oxygen atoms, as calculated using the Ohnishi parameter, providing high etch rates. Additionally, since gap fill materials using cyclodextrin derivatives have low viscosities and molecular weights, they are expected to exhibit excellent flow properties and minimal thermal shrinkage during baking. In this paper, we describe the composition and basic film properties of gap fill materials; planarization in the via-first dual damascene process and etch rates in CF4 gas compared with dextrin with α-glycoside bonds in polysaccharide, poly(2-hydroxypropyl methacrylate) and poly(4-hydroxystyrene). The β-cyclodextrin used in this study was obtained by esterifying the hydroxyl groups of dextrin resulting in improved wettability on via substrates and solubility in photoresist solvents such as propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate and ethyl lactate. Gap fill materials using cyclodextrin derivatives showed good planarization and via filling performance without observing voids in via holes. In addition to superior via filling performance, the etch rate of gap fill materials using β-cyclodextrin derivatives was 2.8-2.9 times higher than that of an ArF photoresist, evaluated under CF4 gas conditions by reactive ion etching. These results were attributed to the combination of both nanoscale porous structures and a high density of oxygen atoms in our gap fill materials using cyclodextrin derivatives. The cyclodextrin derivatives may be applicable as a new type of sacrificial material under the photoresist in ArF lithography.

Advancing semiconductor–electrocatalyst systems: application of surface transformation films and nanosphere lithography

DOE PAGES

Brinkert, Katharina; Richter, Matthias H.; Akay, Ömer; ...

2018-01-01

We demonstrate that shadow nanosphere lithography (SNL) is an auspicious tool to systematically create three-dimensional electrocatalyst nanostructures on the semiconductor photoelectrode through controlling their morphology and optical properties.

Applying the miniaturization technologies for biosensor design.

PubMed

Derkus, Burak

2016-05-15

Microengineering technologies give us some opportunities in developing high-tech sensing systems that operate with low volumes of samples, integrates one or more laboratory functions on a single substrate, and enables automation. These millimetric sized devices can be produced for only a few dollars, which makes them promising candidates for mass-production. Besides electron beam lithography, stencil lithography, nano-imprint lithography or dip pen lithography, basic photolithography is the technique which is extensively used for the design of microengineered sensing systems. This technique has some advantages such as easy-to-manufacture, do not require expensive instrumentation, and allow creation of lower micron-sized patterns. In this review, it has been focused on three different type of microengineered sensing devices which are developed using micro/nano-patterning techniques, microfluidic technology, and microelectromechanics system based technology. Copyright © 2016 Elsevier B.V. All rights reserved.

16 nm-resolution lithography using ultra-small-gap bowtie apertures

NASA Astrophysics Data System (ADS)

Chen, Yang; Qin, Jin; Chen, Jianfeng; Zhang, Liang; Ma, Chengfu; Chu, Jiaru; Xu, Xianfan; Wang, Liang

2017-02-01

Photolithography has long been a critical technology for nanoscale manufacturing, especially in the semiconductor industry. However, the diffractive nature of light has limited the continuous advance of optical lithography resolution. To overcome this obstacle, near-field scanning optical lithography (NSOL) is an alternative low-cost technique, whose resolution is determined by the near-field localization that can be achieved. Here, we apply the newly-developed backside milling method to fabricate bowtie apertures with a sub-15 nm gap, which can substantially improve the resolution of NSOL. A highly confined electric near field is produced by localized surface plasmon excitation and nanofocusing of the closely-tapered gap. We show contact lithography results with a record 16 nm resolution (FWHM). This photolithography scheme promises potential applications in data storage, high-speed computation, energy harvesting, and other nanotechnology areas.

The novel top-coat material for RLS trade-off reduction in EUVL

NASA Astrophysics Data System (ADS)

Onishi, Ryuji; Sakamoto, Rikimaru; Fujitani, Noriaki; Endo, Takafumi; Ho, Bang-ching

2012-03-01

For the next generation lithography (NGL), several technologies have been proposed to achieve the 22nm-node devices and beyond. Extreme ultraviolet (EUV) lithography is one of the candidates for the next generation lithography. In EUV light source development, low power is one of the critical issue because of the low throughput, and another issue is Out of Band (OoB) light existing in EUV light. OoB is concerned to be the cause of deterioration for the lithography performance. In order to avoid this critical issue, we focused on development of the resist top coat material with OoB absorption property as Out of Band Protection Layer (OBPL). We designed this material having high absorbance around 240nm wavelength and high transmittance for EUV light. And this material aimed to improve sensitivity, resolution and LWR performance.

Directed Self-Assembly of Polystyrene- b -poly(propylene carbonate) on Chemical Patterns via Thermal Annealing for Next Generation Lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Guan-Wen; Wu, Guang-Peng; Chen, Xuanxuan

2017-01-23

Directed self-assembly (DSA) of block copolymers (BCPs) combines advantages of conventional photolithography and polymeric materials and shows competence in semiconductors and data storage applications. Driven by the more integrated, much smaller and higher performance of the electronics, however, the industry standard polystyrene-block-poly(methyl methacrylate) (PS-b-PMM.A) in DSA strategy cannot meet the rapid development of lithography technology because its intrinsic limited Flory-Huggins interaction parameter (chi). Despite hundreds of block copolymers have been developed, these BCPs systems are usually subject to a trade-off between high chi and thermal treatment, resulting in incompatibility with the current nanomanufacturing fab processes. Here we discover that polystyrene-b-poly(propylenemore » carbonate) (PS-b-PPC) is well qualified to fill key positions on DSA strategy for the next-generation lithography. The estimated chi-value for PS-b-PPC is 0.079, that is, two times greater than PS-b-PMMA (chi = 0.029 at 150 degrees C), while processing the ability to form perpendicular sub-10 nm morphologies (cylinder and lamellae) via the industry preferred thermal-treatment. DSA of lamellae forming PS-b-PPC on chemoepitaxial density multiplication demonstrates successful sub-10 nm long-range order features on large-area patterning for nanofabrication. Pattern transfer to the silicon substrate through industrial sequential infiltration synthesis is also implemented successfully. Compared with the previously reported methods to orientation control BCPs with high chi-value (including solvent annealing, neutral top-coats, and chemical modification), the easy preparation, high chi value, and etch selectivity while enduring thermal treatment demonstrates PS-b-PPC as a rare and valuable candidate for advancing the field of nanolithography.« less

Plasmonic colour generation

NASA Astrophysics Data System (ADS)

Kristensen, Anders; Yang, Joel K. W.; Bozhevolnyi, Sergey I.; Link, Stephan; Nordlander, Peter; Halas, Naomi J.; Mortensen, N. Asger

2017-01-01

Plasmonic colours are structural colours that emerge from resonant interactions between light and metallic nanostructures. The engineering of plasmonic colours is a promising, rapidly emerging research field that could have a large technological impact. We highlight basic properties of plasmonic colours and recent nanofabrication developments, comparing technology-performance indicators for traditional and nanophotonic colour technologies. The structures of interest include diffraction gratings, nanoaperture arrays, thin films, and multilayers and structures that support Mie resonances and whispering-gallery modes. We discuss plasmonic colour nanotechnology based on localized surface plasmon resonances, such as gap plasmons and hybridized disk-hole plasmons, which allow for colour printing with sub-diffraction resolution. We also address a range of fabrication approaches that enable large-area printing and nanoscale lithography compatible with complementary metal-oxide semiconductor technologies, including nanoimprint lithography and self-assembly. Finally, we review recent developments in dynamically reconfigurable plasmonic colours and in the laser-induced post-processing of plasmonic colour surfaces.

EUV lithography for 22nm half pitch and beyond: exploring resolution, LWR, and sensitivity tradeoffs

NASA Astrophysics Data System (ADS)

Putna, E. Steve; Younkin, Todd R.; Leeson, Michael; Caudillo, Roman; Bacuita, Terence; Shah, Uday; Chandhok, Manish

2011-04-01

The International Technology Roadmap for Semiconductors (ITRS) denotes Extreme Ultraviolet (EUV) lithography as a leading technology option for realizing the 22nm half pitch node and beyond. According to recent assessments made at the 2010 EUVL Symposium, the readiness of EUV materials remains one of the top risk items for EUV adoption. The main development issue regarding EUV resists has been how to simultaneously achieve high resolution, high sensitivity, and low line width roughness (LWR). This paper describes our strategy, the current status of EUV materials, and the integrated post-development LWR reduction efforts made at Intel Corporation. Data collected utilizing Intel's Micro- Exposure Tool (MET) is presented in order to examine the feasibility of establishing a resist process that simultaneously exhibits <=22nm half-pitch (HP) L/S resolution at <=11.3mJ/cm2 with <=3nm LWR.

Manufacturability of the X Architecture at the 90-nm technology node

NASA Astrophysics Data System (ADS)

Smayling, Michael C.; Sarma, Robin C.; Nagata, Toshiyuki; Arora, Narain; Duane, Michael P.; Oemardani, Shiany; Shah, Santosh

2004-05-01

In this paper, we discuss the results from a test chip that demonstrate the manufacturability and integration-worthiness of the X Architecture at the 90-nm technology node. We discuss how a collaborative effort between the design and chip making communities used the current generation of mask, lithography, wafer processing, inspection and metrology equipment to create 45 degree wires in typical metal pitches for the upper layers on a 90-nm device in a production environment. Cadence Design Systems created the test structure design and chip validation tools for the project. Canon"s KrF ES3 and ArF AS2 scanners were used for the lithography. Applied Materials used its interconnect fabrication technologies to produce the multilayer copper, low-k interconnect on 300-mm wafers. The results were confirmed for critical dimension and defect levels using Applied Materials" wafer inspection and metrology systems.

Controlling the Localization of Liquid Droplets in Polymer Matrices by Evaporative Lithography.

PubMed

Zhao, Huaixia; Xu, Jiajia; Jing, Guangyin; Prieto-López, Lizbeth Ofelia; Deng, Xu; Cui, Jiaxi

2016-08-26

Localized inclusions of liquids provide solid materials with many functions, such as self-healing, secretion, and tunable mechanical properties, in a spatially controlled mode. However, a strategy to control the distribution of liquid droplets in solid matrices directly obtained from a homogeneous solution has not been reported thus far. Herein, we describe an approach to selectively localize liquid droplets in a supramolecular gel directly obtained from its solution by using evaporative lithography. In this process, the formation of droplet-embedded domains occurs in regions of free evaporation where the non-volatile liquid is concentrated and undergoes a phase separation to create liquid droplets prior to gelation, while a homogeneous gel matrix is formed in the regions of hindered evaporation. The different regions of a coating with droplet embedment patterns display different secretion abilities, enabling the control of the directional movement of water droplets. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Insertion of two-dimensional photonic crystal pattern on p-GaN layer of GaN-based light-emitting diodes using bi-layer nanoimprint lithography.

PubMed

Byeon, Kyeong-Jae; Hwang, Seon-Yong; Hong, Chang-Hee; Baek, Jong Hyeob; Lee, Heon

2008-10-01

Nanoimprint lithography (NIL) was adapted to fabricate two-dimensional (2-D) photonic crystal (PC) pattern on the p-GaN layer of InGaN/GaN multi quantum well light-emitting diodes (LEDs) structure to improve the light extraction efficiency. For the uniform transfer of the PC pattern, a bi-layer imprinting method with liquid phase resin was used. The p-GaN layer was patterned with a periodic array of holes by an inductively coupled plasma etching process, based on SiCl4/Ar plasmas. As a result, 2-D photonic crystal patterns with 144 nm, 200 nm and 347 nm diameter holes were uniformly formed on the p-GaN layer and the photoluminescence (PL) intensity of each patterned LED samples was increased by more than 2.6 times, as compared to that of the un-patterned LED sample.

Tunable laser interference lithography preparation of plasmonic nanoparticle arrays tailored for SERS.

PubMed

Gisbert Quilis, Nestor; Lequeux, Médéric; Venugopalan, Priyamvada; Khan, Imran; Knoll, Wolfgang; Boujday, Souhir; Lamy de la Chapelle, Marc; Dostalek, Jakub

2018-05-23

The facile preparation of arrays of plasmonic nanoparticles over a square centimeter surface area is reported. The developed method relies on tailored laser interference lithography (LIL) that is combined with dry etching and it offers means for the rapid fabrication of periodic arrays of metallic nanostructures with well controlled morphology. Adjusting the parameters of the LIL process allows for the preparation of arrays of nanoparticles with a diameter below hundred nanometers independently of their lattice spacing. Gold nanoparticle arrays were precisely engineered to support localized surface plasmon resonance (LSPR) with different damping at desired wavelengths in the visible and near infrared part of the spectrum. The applicability of these substrates for surface enhanced Raman scattering is demonstrated where cost-effective, uniform and reproducible substrates are of paramount importance. The role of deviations in the spectral position and the width of the LSPR band affected by slight variations of plasmonic nanostructures is discussed.

Performance Characterization of an xy-Stage Applied to Micrometric Laser Direct Writing Lithography.

PubMed

Jaramillo, Juan; Zarzycki, Artur; Galeano, July; Sandoz, Patrick

2017-01-31

This article concerns the characterization of the stability and performance of a motorized stage used in laser direct writing lithography. The system was built from commercial components and commanded by G-code. Measurements use a pseudo-periodic-pattern (PPP) observed by a camera and image processing is based on Fourier transform and phase measurement methods. The results report that the built system has a stability against vibrations determined by peak-valley deviations of 65 nm and 26 nm in the x and y directions, respectively, with a standard deviation of 10 nm in both directions. When the xy-stage is in movement, it works with a resolution of 0.36 μm, which is an acceptable value for most of research and development (R and D) microtechnology developments in which the typical feature size used is in the micrometer range.

Distortion of 3D SU8 photonic structures fabricated by four-beam holographic lithography withumbrella configuration.

PubMed

Zhu, Xuelian; Xu, Yongan; Yang, Shu

2007-12-10

We present a quantitative study of the distortion from a threeterm diamond-like structure fabricated in SU8 polymer by four-beam holographic lithography. In the study of the refraction effect, theory suggests that the lattice in SU8 should be elongated in the [111] direction but have no distortion in the (111) plane, and each triangular-like hole array in the (111) plane would rotate by ~30 degrees away from that in air. Our experiments agree with the prediction on the periodicity in the (111) plane and the rotation due to refraction effect, however, we find that the film shrinkage during lithographic process has nearly compensated the predicted elongation in the [111] direction. In study of photonic bandgap (PBG) properties of silicon photonic crystals templated by the SU8 structure, we find that the distortion has decreased quality of PBG.

Performance Characterization of an xy-Stage Applied to Micrometric Laser Direct Writing Lithography

PubMed Central

Jaramillo, Juan; Zarzycki, Artur; Galeano, July; Sandoz, Patrick

2017-01-01

This article concerns the characterization of the stability and performance of a motorized stage used in laser direct writing lithography. The system was built from commercial components and commanded by G-code. Measurements use a pseudo-periodic-pattern (PPP) observed by a camera and image processing is based on Fourier transform and phase measurement methods. The results report that the built system has a stability against vibrations determined by peak-valley deviations of 65 nm and 26 nm in the x and y directions, respectively, with a standard deviation of 10 nm in both directions. When the xy-stage is in movement, it works with a resolution of 0.36 µm, which is an acceptable value for most of research and development (R and D) microtechnology developments in which the typical feature size used is in the micrometer range. PMID:28146126

Metal hierarchical patterning by direct nanoimprint lithography

PubMed Central

Radha, Boya; Lim, Su Hui; Saifullah, Mohammad S. M.; Kulkarni, Giridhar U.

2013-01-01

Three-dimensional hierarchical patterning of metals is of paramount importance in diverse fields involving photonics, controlling surface wettability and wearable electronics. Conventionally, this type of structuring is tedious and usually involves layer-by-layer lithographic patterning. Here, we describe a simple process of direct nanoimprint lithography using palladium benzylthiolate, a versatile metal-organic ink, which not only leads to the formation of hierarchical patterns but also is amenable to layer-by-layer stacking of the metal over large areas. The key to achieving such multi-faceted patterning is hysteretic melting of ink, enabling its shaping. It undergoes transformation to metallic palladium under gentle thermal conditions without affecting the integrity of the hierarchical patterns on micro- as well as nanoscale. A metallic rice leaf structure showing anisotropic wetting behavior and woodpile-like structures were thus fabricated. Furthermore, this method is extendable for transferring imprinted structures to a flexible substrate to make them robust enough to sustain numerous bending cycles. PMID:23446801

Combining retraction edge lithography and plasma etching for arbitrary contour nanoridge fabrication

NASA Astrophysics Data System (ADS)

Zhao, Yiping; Jansen, Henri; de Boer, Meint; Berenschot, Erwin; Bouwes, Dominique; Gironès, Miriam; Huskens, Jurriaan; Tas, Niels

2010-09-01

Edge lithography in combination with fluorine-based plasma etching is employed to avoid the dependence on crystal orientation in single crystal silicon to create monolithic nanoridges with arbitrary contours. This is demonstrated by using a mask with circular structures and Si etching at cryogenic temperature with SF6+O2 plasma mixtures. Initially, the explored etch recipe was used with Cr as the masking material. Although nanoridges with perfect vertical sidewalls have been achieved, Cr causes severe sidewall roughness due to line edge roughness. Therefore, an SU-8 polymer is used instead. Although the SU-8 pattern definition needs further improvement, we demonstrate the possibility of fabricating Si nanoridges of arbitrary contours providing a width below 50 nm and a height between 25 and 500 nm with smooth surface finish. Artifacts in the ridge profile are observed and are mainly caused by the bird's beak phenomenon which is characteristic for the used LOCOS process.

On-wire lithography: synthesis, encoding and biological applications

PubMed Central

Banholzer, Matthew J; Qin, Lidong; Millstone, Jill E; Osberg, Kyle D; Mirkin, Chad A

2014-01-01

The next step in the maturing field of nanotechnology is to develop ways to introduce unusual architectural changes to simple building blocks. For nanowires, on-wire lithography (OWL) has emerged as a powerful way of synthesizing a segmented structure and subsequently introducing architectural changes through post-chemical treatment. In the OWL protocol presented here, multisegmented nanowires are grown and a support layer is deposited on one side of each nanostructure. After selective chemical etching of sacrificial segments, structures with gaps as small as 2 nm and disks as thin as 20 nm can be created. These nanostructures are highly tailorable and can be used in electrical transport, Raman enhancement and energy conversion. Such nanostructures can be functionalized with many types of adsorbates, enabling the use of OWL-generated structures as bioactive probes for diagnostic assays and molecular transport junctions. The process takes 13–36 h depending on the type of adsorbate used to functionalize the nanostructures. PMID:19444241

High Efficient THz Emission From Unbiased and Biased Semiconductor Nanowires Fabricated Using Electron Beam Lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balci, Soner; Czaplewski, David A.; Jung, Il Woong

Besides having perfect control on structural features, such as vertical alignment and uniform distribution by fabricating the wires via e-beam lithography and etching process, we also investigated the THz emission from these fabricated nanowires when they are applied DC bias voltage. To be able to apply a voltage bias, an interdigitated gold (Au) electrode was patterned on the high-quality InGaAs epilayer grown on InP substrate bymolecular beam epitaxy. Afterwards, perfect vertically aligned and uniformly distributed nanowires were fabricated in between the electrodes of this interdigitated pattern so that we could apply voltage bias to improve the THz emission. As amore » result, we achieved enhancement in the emitted THz radiation by ~four times, about 12 dB increase in power ratio at 0.25 THz with a DC biased electric field compared with unbiased NWs.« less

Native conflict awared layout decomposition in triple patterning lithography using bin-based library matching method

NASA Astrophysics Data System (ADS)

Ke, Xianhua; Jiang, Hao; Lv, Wen; Liu, Shiyuan

2016-03-01

Triple patterning (TP) lithography becomes a feasible technology for manufacturing as the feature size further scale down to sub 14/10 nm. In TP, a layout is decomposed into three masks followed with exposures and etches/freezing processes respectively. Previous works mostly focus on layout decomposition with minimal conflicts and stitches simultaneously. However, since any existence of native conflict will result in layout re-design/modification and reperforming the time-consuming decomposition, the effective method that can be aware of native conflicts (NCs) in layout is desirable. In this paper, a bin-based library matching method is proposed for NCs detection and layout decomposition. First, a layout is divided into bins and the corresponding conflict graph in each bin is constructed. Then, we match the conflict graph in a prebuilt colored library, and as a result the NCs can be located and highlighted quickly.

Method for nanomachining high aspect ratio structures

DOEpatents

Yun, Wenbing; Spence, John; Padmore, Howard A.; MacDowell, Alastair A.; Howells, Malcolm R.

2004-11-09

A nanomachining method for producing high-aspect ratio precise nanostructures. The method begins by irradiating a wafer with an energetic charged-particle beam. Next, a layer of patterning material is deposited on one side of the wafer and a layer of etch stop or metal plating base is coated on the other side of the wafer. A desired pattern is generated in the patterning material on the top surface of the irradiated wafer using conventional electron-beam lithography techniques. Lastly, the wafer is placed in an appropriate chemical solution that produces a directional etch of the wafer only in the area from which the resist has been removed by the patterning process. The high mechanical strength of the wafer materials compared to the organic resists used in conventional lithography techniques with allows the transfer of the precise patterns into structures with aspect ratios much larger than those previously achievable.

Fabrication of Pt nanowires with a diffraction-unlimited feature size by high-threshold lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Li, E-mail: lil@cust.edu.cn, E-mail: wangz@cust.edu.cn, E-mail: kq-peng@bnu.edu.cn; Zhang, Ziang; Yu, Miao

2015-09-28

Although the nanoscale world can already be observed at a diffraction-unlimited resolution using far-field optical microscopy, to make the step from microscopy to lithography still requires a suitable photoresist material system. In this letter, we consider the threshold to be a region with a width characterized by the extreme feature size obtained using a Gaussian beam spot. By narrowing such a region through improvement of the threshold sensitization to intensity in a high-threshold material system, the minimal feature size becomes smaller. By using platinum as the negative photoresist, we demonstrate that high-threshold lithography can be used to fabricate nanowire arraysmore » with a scalable resolution along the axial direction of the linewidth from the micro- to the nanoscale using a nanosecond-pulsed laser source with a wavelength λ{sub 0} = 1064 nm. The minimal feature size is only several nanometers (sub λ{sub 0}/100). Compared with conventional polymer resist lithography, the advantages of high-threshold lithography are sharper pinpoints of laser intensity triggering the threshold response and also higher robustness allowing for large area exposure by a less-expensive nanosecond-pulsed laser.« less

Nanobiotechnology: soft lithography.

PubMed

Mele, Elisa; Pisignano, Dario

2009-01-01

An entirely new scientific and technological area has been born from the combination of nanotechnology and biology: nanobiotechnology. Such a field is primed especially by the strong potential synergy enabled by the integration of technologies, protocols, and investigation methods, since, while biomolecules represent functional nanosystems interesting for nanotechnology, micro- and nano-devices can be very useful instruments for studying biological materials. In particular, the research of new approaches for manipulating matter and fabricating structures with micrometre- and sub-micrometre resolution has determined the development of soft lithography, a new set of non-photolithographic patterning techniques applied to the realization of selective proteins and cells attachment, microfluidic circuits for protein and DNA chips, and 3D scaffolds for tissue engineering. Today, soft lithographies have become an asset of nanobiotechnology. This Chapter examines the biological applications of various soft lithographic techniques, with particular attention to the main general features of soft lithography and of materials commonly employed with these methods. We present approaches particularly suitable for biological materials, such as microcontact printing (muCP) and microfluidic lithography, and some key micro- and nanobiotechnology applications, such as the patterning of protein and DNA microarrays and the realization of microfluidic-based analytical devices.

Directed Block Copolymer Assembly versus Electron Beam Lithography for Bit-Patterned Media with Areal Density of 1 Terabit/inch(2) and Beyond.

PubMed

Yang, Xiaomin; Wan, Lei; Xiao, Shuaigang; Xu, Yuan; Weller, Dieter K

2009-07-28

The directed self-assembly of block copolymer (BCP) offers a new route to perfect nanolithographic patterning at sub-50 nm length scale with molecular scale precision. We have explored the feasibility of using the BCP approach versus the conventional electron beam (e-beam) lithography to create highly dense dot patterns for bit-patterned media (BPM) applications. Cylinder-forming poly(styrene-b-methyl methacrylate) (PS-b-PMMA) directly self-assembled on a chemically prepatterned substrate. The nearly perfect hexagonal arrays of perpendicularly oriented cylindrical pores at a density of approximately 1 Terabit per square inch (Tb/in.(2)) are achieved over an arbitrarily large area. Considerable gains in the BCP process are observed relative to the conventional e-beam lithography in terms of the dot size variation, the placement accuracy, the pattern uniformity, and the exposure latitude. The maximum dimensional latitude in the cylinder-forming BCP patterns and the maximum skew angle that the BCP can tolerate have been investigated for the first time. The dimensional latitude restricts the formation of more than one lattice configuration in certain ranges. More defects in BCP patterns are observed when using low molecular weight BCP materials or on non-hexagonal prepatterns due to the dimensional latitude restriction. Finally, the limitations and challenges in the BCP approach that are associated with BPM applications will be briefly discussed.

Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography

NASA Astrophysics Data System (ADS)

Singh, Vikram; Satyanarayana, Vardhineedi Sri Venkata; Batina, Nikola; Reyes, Israel Morales; Sharma, Satinder K.; Kessler, Felipe; Scheffer, Francine R.; Weibel, Daniel E.; Ghosh, Subrata; Gonsalves, Kenneth E.

2014-10-01

Although extreme ultraviolet (EUV) lithography is being considered as one of the most promising next-generation lithography techniques for patterning sub-20 nm features, the development of suitable EUV resists remains one of the main challenges confronting the semiconductor industry. The goal is to achieve sub-20 nm line patterns having low line edge roughness (LER) of <1.8 nm and a sensitivity of 5 to 20 mJ/cm2. The present work demonstrates the lithographic performance of two nonchemically amplified (n-CARs) negative photoresists, MAPDST homopolymer and MAPDST-MMA copolymer, prepared from suitable monomers containing the radiation sensitive sulfonium functionality. Investigations into the effect of several process parameters are reported. These include spinning conditions to obtain film thicknesses <50 nm, baking regimes, exposure conditions, and the resulting surface topographies. The effect of these protocols on sensitivity, contrast, and resolution has been assessed for the optimization of 20 nm features and the corresponding LER/line width roughness. These n-CARs have also been found to possess high etch resistance. The etch durability of MAPDST homopolymer and MAPDST-MMA copolymer (under SF6 plasma chemistry) with respect to the silicon substrate are 7.2∶1 and 8.3∶1, respectively. This methodical investigation will provide guidance in designing new resist materials with improved efficiency for EUVL through polymer microstructure engineering.

A mask manufacturer's perspective on maskless lithography

NASA Astrophysics Data System (ADS)

Buck, Peter; Biechler, Charles; Kalk, Franklin

2005-11-01

Maskless Lithography (ML2) is again being considered for use in mainstream CMOS IC manufacturing. Sessions at technical conferences are being devoted to ML2. A multitude of new companies have been formed in the last several years to apply new concepts to breaking the throughput barrier that has in the past prevented ML2 from achieving the cost and cycle time performance necessary to become economically viable, except in rare cases. Has Maskless Lithography's (we used to call it "Direct Write Lithography") time really come? If so, what is the expected impact on the mask manufacturer and does it matter? The lithography tools used today in mask manufacturing are similar in concept to ML2 except for scale, both in throughput and feature size. These mask tools produce highly accurate lithographic images directly from electronic pattern files, perform multi-layer overlay, and mix-n-match across multiple tools, tool types and sites. Mask manufacturers are already accustomed to the ultimate low volume - one substrate per design layer. In order to achieve the economically required throughput, proposed ML2 systems eliminate or greatly reduce some of the functions that are the source of the mask writer's accuracy. Can these ML2 systems meet the demanding lithographic requirements without these functions? ML2 may eliminate the reticle but many of the processes and procedures performed today by the mask manufacturer are still required. Examples include the increasingly complex mask data preparation step and the verification performed to ensure that the pattern on the reticle is accurately representing the design intent. The error sources that are fixed on a reticle are variable with time on an ML2 system. It has been proposed that if ML2 is successful it will become uneconomical to be in the mask business - that ML2, by taking the high profit masks will take all profitability out of mask manufacturing and thereby endanger the entire semiconductor industry. Others suggest that a successful ML2 system solves the mask cost issue and thereby reduces the need and attractiveness of ML2. Are these concerns valid? In this paper we will present a perspective on maskless lithography from the considerable "direct write" experience of a mask manufacturer. We will examine the various business models proposed for ML2 insertion as well as the key technical challenges to achieving simultaneously the throughput and the lithographic quality necessary to become economically viable. We will consider the question of the economic viability of the mask industry in a post-ML2 world and will propose possible models where the mask industry can meaningfully participate.

Fabricating Blazed Diffraction Gratings by X-Ray Lithography

NASA Technical Reports Server (NTRS)

Mouroulis, Pantazis; Hartley, Frank; Wilson, Daniel

2004-01-01

Gray-scale x-ray lithography is undergoing development as a technique for fabricating blazed diffraction gratings. As such, gray-scale x-ray lithography now complements such other grating-fabrication techniques as mechanical ruling, holography, ion etching, laser ablation, laser writing, and electron-beam lithography. Each of these techniques offers advantages and disadvantages for implementing specific grating designs; no single one of these techniques can satisfy the design requirements for all applications. Gray-scale x-ray lithography is expected to be advantageous for making gratings on steeper substrates than those that can be made by electron-beam lithography. This technique is not limited to sawtooth groove profiles and flat substrates: various groove profiles can be generated on arbitrarily shaped (including highly curved) substrates with the same ease as sawtooth profiles can be generated on flat substrates. Moreover, the gratings fabricated by this technique can be made free of ghosts (spurious diffraction components attributable to small spurious periodicities in the locations of grooves). The first step in gray-scale x-ray lithography is to conformally coat a substrate with a suitable photoresist. An x-ray mask (see Figure 1) is generated, placed between the substrate and a source of collimated x-rays, and scanned over the substrate so as to create a spatial modulation in the exposure of the photoresist. Development of the exposed photoresist results in a surface corrugation that corresponds to the spatial modulation and that defines the grating surface. The grating pattern is generated by scanning an appropriately shaped x-ray area mask along the substrate. The mask example of Figure 1 would generate a blazed grating profile when scanned in the perpendicular direction at constant speed, assuming the photoresist responds linearly to incident radiation. If the resist response is nonlinear, then the mask shape can be modified to account for the nonlinearity and produce a desired groove profile. An example of grating grooves generated by this technique is shown in Figure 2. A maximum relative efficiency of 88 percent has been demonstrated.

Solid State Research.

DTIC Science & Technology

1995-08-15

contact formation. 16 The surface morphology was examined using Nomarski contrast microscopy. The alloy composi- tion of AlGaAs layers was...tunnel. For this purpose, a previously reported FEA fabrication process [2] based on laser- interferometric lithography is being optimized to produce...allows angle of arrival to be determined using only compressed pulse amplitudes. The alternative is an interferometric antenna coupled to a

Fabrication of 3D polymer photonic crystals for near-IR applications

NASA Astrophysics Data System (ADS)

Yao, Peng; Qiu, Liang; Shi, Shouyuan; Schneider, Garrett J.; Prather, Dennis W.; Sharkawy, Ahmed; Kelmelis, Eric

2008-02-01

Photonic crystals[1, 2] have stirred enormous research interest and became a growing enterprise in the last 15 years. Generally, PhCs consist of periodic structures that possess periodicity comparable with the wavelength that the PhCs are designed to modulate. If material and periodic pattern are properly selected, PhCs can be applied to many applications based on their unique properties, including photonic band gaps (PBG)[3], self-collimation[4], super prism[5], etc. Strictly speaking, PhCs need to possess periodicity in three dimensions to maximize their advantageous capabilities. However, many current research is based on scaled two-dimensional PhCs, mainly due to the difficulty of fabrication such three-dimensional PhCs. Many approaches have been explored for the fabrication of 3D photonic crystals, including layer-by-layer surface micromachining[6], glancing angle deposition[7], 3D micro-sculpture method[8], self-assembly[9] and lithographical methods[10-12]. Among them, lithographic methods became increasingly accepted due to low costs and precise control over the photonic crystal structure. There are three mostly developed lithographical methods, namely X-ray lithography[10], holographic lithography[11] and two-photon polymerization[12]. Although significant progress has been made in developing these lithography-based technologies, these approaches still suffer from significant disadvantages. X-ray lithography relies on an expensive radiation source. Holographic lithography lacks the flexibility to create engineered defects, and multi-photon polymerization is not suitable for parallel fabrication. In our previous work, we developed a multi-layer photolithography processes[13, 14] that is based on multiple resist application and enhanced absorption upon exposure. Using a negative lift-off resist (LOR) and 254nm DUV source, we have demonstrated fabrication of 3D arbitrary structures with feature size of several microns. However, severe intermixing problem occurred as we reduced the lattice constant for near-IR applications. In this work, we address this problem by employing SU8. The exposure is vertically confined by using a mismatched 220nm DUV source. Intermixing problem is eliminated due to more densely crosslinked resist molecules. Using this method, we have demonstrated 3D "woodpile" structure with 1.55μm lattice constant and a 2mm-by-2mm pattern area.

Stability and imaging of the ASML EUV alpha demo tool

NASA Astrophysics Data System (ADS)

Hermans, Jan V.; Baudemprez, Bart; Lorusso, Gian; Hendrickx, Eric; van Dijk, Andre; Jonckheere, Rik; Goethals, Anne-Marie

2009-03-01

Extreme Ultra-Violet (EUV) lithography is the leading candidate for semiconductor manufacturing of the 22nm technology node and beyond, due to the very short wavelength of 13.5nm. However, reducing the wavelength adds complexity to the lithographic process. The impact of the EUV specific conditions on lithographic performance needs to be understood, before bringing EUV lithography into pre-production. To provide early learning on EUV, an EUV fullfield scanner, the Alpha Demo Tool (ADT) from ASML was installed at IMEC, using a Numerical Aperture (NA) of 0.25. In this paper we report on different aspects of the ADT: the imaging and overlay performance and both short and long-term stability. For 40nm dense Lines-Spaces (LS), the ADT shows an across field overlapping process window of 270nm Depth Of Focus (DOF) at 10% Exposure Latitude (EL) and a wafer CD Uniformity (CDU) of 3nm 3σ, without any corrections for process or reticle. The wafer CDU is correlated to different factors that are known to influence the CD fingerprint from traditional lithography: slit intensity uniformity, focus plane deviation and reticle CD error. Taking these contributions into account, the CD through slit fingerprint for 40nm LS is simulated with excellent agreement to experimental data. The ADT shows good CD stability over 9 months of operation, both intrafield and across wafer. The projection optics reflectivity has not degraded over 9 months. Measured overlay performance with respect to a dry tool shows |Mean|+3σ below 20nm with more correction potential by applying field-by-field corrections (|Mean|+3σ <=10nm). For 22nm SRAM application, both contact hole and metal layer were printed in EUV with 10% CD and 15nm overlay control. Below 40nm, the ADT shows good wafer CDU for 30nm dense and isolated lines (on the same wafer) and 38nm dense Contact Holes (CH). First 28nm dense line CDU data are achieved. The results indicate that the ADT can be used effectively for EUV process development before installation of the pre-production tool, the ASML NXE Gen. 1 at IMEC.

High throughput nanoimprint lithography for semiconductor memory applications

NASA Astrophysics Data System (ADS)

Ye, Zhengmao; Zhang, Wei; Khusnatdinov, Niyaz; Stachowiak, Tim; Irving, J. W.; Longsine, Whitney; Traub, Matthew; Fletcher, Brian; Liu, Weijun

2017-03-01

Imprint lithography is a promising technology for replication of nano-scale features. For semiconductor device applications, Canon deposits a low viscosity resist on a field by field basis using jetting technology. A patterned mask is lowered into the resist fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. There are two critical components to meeting throughput requirements for imprint lithography. Using a similar approach to what is already done for many deposition and etch processes, imprint stations can be clustered to enhance throughput. The FPA-1200NZ2C is a four station cluster system designed for high volume manufacturing. For a single station, throughput includes overhead, resist dispense, resist fill time (or spread time), exposure and separation. Resist exposure time and mask/wafer separation are well understood processing steps with typical durations on the order of 0.10 to 0.20 seconds. To achieve a total process throughput of 17 wafers per hour (wph) for a single station, it is necessary to complete the fluid fill step in 1.2 seconds. For a throughput of 20 wph, fill time must be reduced to only one 1.1 seconds. There are several parameters that can impact resist filling. Key parameters include resist drop volume (smaller is better), system controls (which address drop spreading after jetting), Design for Imprint or DFI (to accelerate drop spreading) and material engineering (to promote wetting between the resist and underlying adhesion layer). In addition, it is mandatory to maintain fast filling, even for edge field imprinting. In this paper, we address the improvements made in all of these parameters to first enable a 1.20 second filling process for a device like pattern and have demonstrated this capability for both full fields and edge fields. Non-fill defectivity is well under 1.0 defects/cm2 for both field types. Next, by further reducing drop volume and optimizing drop patterns, a fill time of 1.1 seconds was demonstrated.

Progress in mask replication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Selinidis, Kosta S.; Brooks, Cynthia B.; Doyle, Gary F.; Brown, Laura; Jones, Chris; Imhof, Joseph; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

2011-04-01

The Jet and Flash Imprint Lithography (J-FILTM) process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105imprints. This suggests that tens of thousands of templates/masks will be required to satisfy the needs of a manufacturing environment. Electron-beam patterning is too slow to feasibly deliver these volumes, but instead can provide a high quality "master" mask which can be replicated many times with an imprint lithography tool. This strategy has the capability to produce the required supply of "working" templates/masks. In this paper, we review the development of the mask form factor, imprint replication tools and processes specifically for semiconductor applications. The requirements needed for semiconductors dictate the need for a well defined form factor for both master and replica masks which is also compatible with the existing mask infrastructure established for the 6025 semi standard, 6" x 6" x 0.25" photomasks. Complying with this standard provides the necessary tooling needed for mask fabrication processes, cleaning, metrology, and inspection. The replica form factor has additional features specific to imprinting such as a pre-patterned mesa. A PerfectaTM MR5000 mask replication tool has been developed specifically to pattern replica masks from an e-beam written master. The system specifications include a throughput of four replicas per hour with an added image placement component of 5nm, 3sigma and a critical dimension uniformity error of less than 1nm, 3sigma. A new process has been developed to fabricate replicas with high contrast alignment marks so that designs for imprint can fit within current device layouts and maximize the usable printed area on the wafer. Initial performance results of this marks are comparable to the baseline fused silica align marks.

75 FR 81643 - In the Matter of Certain Semiconductor Products Made by Advanced Lithography Techniques and...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-12-28

... Semiconductor Products Made by Advanced Lithography Techniques and Products Containing Same; Notice of... Mexico) (``STC''), alleging a violation of section 337 in the importation, sale for [[Page 81644

Farbrication of diffractive optical elements on a Si chip by an imprint lithography using nonsymmetrical silicon mold

NASA Astrophysics Data System (ADS)

Hirai, Yoshihiko; Okano, Masato; Okuno, Takayuki; Toyota, Hiroshi; Yotsuya, Tsutomu; Kikuta, Hisao; Tanaka, Yoshio

2001-11-01

Fabrication of a fine diffractive optical element on a Si chip is demonstrated using imprint lithography. A chirped diffraction grating, which has modulated pitched pattern with curved cross section is fabricated by an electron beam lithography, where the exposure dose profile is automatically optimized by computer aided system. Using the resist pattern as an etching mask, anisotropic dry etching is performed to transfer the resist pattern profile to the Si chip. The etched Si substrate is used as a mold in the imprint lithography. The Si mold is pressed to a thin polymer (poly methyl methacrylate) on a Si chip. After releasing the mold, a fine diffractive optical pattern is successfully transferred to the thin polymer. This method is exceedingly useful for fabrication of integrated diffractive optical elements with electric circuits on a Si chip.

Investigation of model-based physical design restrictions (Invited Paper)

NASA Astrophysics Data System (ADS)

Lucas, Kevin; Baron, Stanislas; Belledent, Jerome; Boone, Robert; Borjon, Amandine; Couderc, Christophe; Patterson, Kyle; Riviere-Cazaux, Lionel; Rody, Yves; Sundermann, Frank; Toublan, Olivier; Trouiller, Yorick; Urbani, Jean-Christophe; Wimmer, Karl

2005-05-01

As lithography and other patterning processes become more complex and more non-linear with each generation, the task of physical design rules necessarily increases in complexity also. The goal of the physical design rules is to define the boundary between the physical layout structures which will yield well from those which will not. This is essentially a rule-based pre-silicon guarantee of layout correctness. However the rapid increase in design rule requirement complexity has created logistical problems for both the design and process functions. Therefore, similar to the semiconductor industry's transition from rule-based to model-based optical proximity correction (OPC) due to increased patterning complexity, opportunities for improving physical design restrictions by implementing model-based physical design methods are evident. In this paper we analyze the possible need and applications for model-based physical design restrictions (MBPDR). We first analyze the traditional design rule evolution, development and usage methodologies for semiconductor manufacturers. Next we discuss examples of specific design rule challenges requiring new solution methods in the patterning regime of low K1 lithography and highly complex RET. We then evaluate possible working strategies for MBPDR in the process development and product design flows, including examples of recent model-based pre-silicon verification techniques. Finally we summarize with a proposed flow and key considerations for MBPDR implementation.

Nano-porous electrode systems by colloidal lithography for sensitive electrochemical detection: fabrication technology and properties

NASA Astrophysics Data System (ADS)

Lohmüller, Theobald; Müller, Ulrich; Breisch, Stefanie; Nisch, Wilfried; Rudorf, Ralf; Schuhmann, Wolfgang; Neugebauer, Sebastian; Kaczor, Markus; Linke, Stephan; Lechner, Sebastian; Spatz, Joachim; Stelzle, Martin

2008-11-01

A porous metal-insulator-metal sensor system was developed with the ultimate goal of enhancing the sensitivity of electrochemical sensors by taking advantage of redox cycling of electro active molecules between closely spaced electrodes. The novel fabrication technology is based on thin film deposition in combination with colloidal self-assembly and reactive ion etching to create micro- or nanopores. This cost effective approach is advantageous compared to common interdigitated electrode arrays (IDA) since it does not require high definition lithography technology. Spin-coating and random particle deposition, combined with a new sublimation process are discussed as competing strategies to generate monolayers of colloidal spheres. Metal-insulator-metal layer systems with low leakage currents < 10 pA and an insulator thickness as low as 100 nm were obtained at high yield (typically > 90%). We also discuss possible causes of sensor failure with respect to critical fabrication processes. Short circuits which could occur during or as a result of the pore etching process were investigated in detail. Infrared microscopy in combination with focused ion beam etching/SEM were used to reveal a defect mechanism creating interconnects and increased leakage current between the top and bottom electrodes. Redox cycling provides for amplification factors of >100. A general applicability for electrochemical diagnostic assays is therefore anticipated.

Direct-Write Laser Grayscale Lithography for Multilayer Lead Zirconate Titanate Thin Films.

PubMed

Benoit, Robert R; Jordan, Delaney M; Smith, Gabriel L; Polcawich, Ronald G; Bedair, Sarah S; Potrepka, Daniel M

2018-05-01

Direct-write laser grayscale lithography has been used to facilitate a single-step patterning technique for multilayer lead zirconate titanate (PZT) thin films. A 2.55- -thick photoresist was patterned with a direct-write laser. The intensity of the laser was varied to create both tiered and sloped structures that are subsequently transferred into multilayer PZT(52/48) stacks using a single Ar ion-mill etch. Traditional processing requires a separate photolithography step and an ion mill etch for each layer of the substrate, which can be costly and time consuming. The novel process allows access to buried electrode layers in the multilayer stack in a single photolithography step. The grayscale process was demonstrated on three 150-mm diameter Si substrates configured with a 0.5- -thick SiO 2 elastic layer, a base electrode of Pt/TiO 2 , and a stack of four PZT(52/48) thin films of either 0.25- thickness per layer or 0.50- thickness per layer, and using either Pt or IrO 2 electrodes above and below each layer. Stacked capacitor structures were patterned and results will be reported on the ferroelectric and electromechanical properties using various wiring configurations and compared to comparable single layer PZT configurations.

Characterization of Graphene-based FET Fabricated using a Shadow Mask

PubMed Central

Tien, Dung Hoang; Park, Jun-Young; Kim, Ki Buem; Lee, Naesung; Seo, Yongho

2016-01-01

To pattern electrical metal contacts, electron beam lithography or photolithography are commonly utilized, and these processes require polymer resists with solvents. During the patterning process the graphene surface is exposed to chemicals, and the residue on the graphene surface was unable to be completely removed by any method, causing the graphene layer to be contaminated. A lithography free method can overcome these residue problems. In this study, we use a micro-grid as a shadow mask to fabricate a graphene based field-effect-transistor (FET). Electrical measurements of the graphene based FET samples are carried out in air and vacuum. It is found that the Dirac peaks of the graphene devices on SiO2 or on hexagonal boron nitride (hBN) shift from a positive gate voltage region to a negative region as air pressure decreases. In particular, the Dirac peaks shift very rapidly when the pressure decreases from ~2 × 10−3 Torr to ~5 × 10−5 Torr within 5 minutes. These Dirac peak shifts are known as adsorption and desorption of environmental gases, but the shift amounts are considerably different depending on the fabrication process. The high gas sensitivity of the device fabricated by shadow mask is attributed to adsorption on the clean graphene surface. PMID:27169620

Grayscale lithography-automated mask generation for complex three-dimensional topography

NASA Astrophysics Data System (ADS)

Loomis, James; Ratnayake, Dilan; McKenna, Curtis; Walsh, Kevin M.

2016-01-01

Grayscale lithography is a relatively underutilized technique that enables fabrication of three-dimensional (3-D) microstructures in photosensitive polymers (photoresists). By spatially modulating ultraviolet (UV) dosage during the writing process, one can vary the depth at which photoresist is developed. This means complex structures and bioinspired designs can readily be produced that would otherwise be cost prohibitive or too time intensive to fabricate. The main barrier to widespread grayscale implementation, however, stems from the laborious generation of mask files required to create complex surface topography. We present a process and associated software utility for automatically generating grayscale mask files from 3-D models created within industry-standard computer-aided design (CAD) suites. By shifting the microelectromechanical systems (MEMS) design onus to commonly used CAD programs ideal for complex surfacing, engineering professionals already familiar with traditional 3-D CAD software can readily utilize their pre-existing skills to make valuable contributions to the MEMS community. Our conversion process is demonstrated by prototyping several samples on a laser pattern generator-capital equipment already in use in many foundries. Finally, an empirical calibration technique is shown that compensates for nonlinear relationships between UV exposure intensity and photoresist development depth as well as a thermal reflow technique to help smooth microstructure surfaces.

Design optimization of highly asymmetrical layouts by 2D contour metrology

NASA Astrophysics Data System (ADS)

Hu, C. M.; Lo, Fred; Yang, Elvis; Yang, T. H.; Chen, K. C.

2018-03-01

As design pitch shrinks to the resolution limit of up-to-date optical lithography technology, the Critical Dimension (CD) variation tolerance has been dramatically decreased for ensuring the functionality of device. One of critical challenges associates with the narrower CD tolerance for whole chip area is the proximity effect control on asymmetrical layout environments. To fulfill the tight CD control of complex features, the Critical Dimension Scanning Electron Microscope (CD-SEM) based measurement results for qualifying process window and establishing the Optical Proximity Correction (OPC) model become insufficient, thus 2D contour extraction technique [1-5] has been an increasingly important approach for complementing the insufficiencies of traditional CD measurement algorithm. To alleviate the long cycle time and high cost penalties for product verification, manufacturing requirements are better to be well handled at design stage to improve the quality and yield of ICs. In this work, in-house 2D contour extraction platform was established for layout design optimization of 39nm half-pitch Self-Aligned Double Patterning (SADP) process layer. Combining with the adoption of Process Variation Band Index (PVBI), the contour extraction platform enables layout optimization speedup as comparing to traditional methods. The capabilities of identifying and handling lithography hotspots in complex layout environments of 2D contour extraction platform allow process window aware layout optimization to meet the manufacturing requirements.

Fabrication of high aspect ratio tungsten nanostructures on ultrathin c-Si membranes for extreme UV applications

NASA Astrophysics Data System (ADS)

Delachat, F.; Le Drogoff, B.; Constancias, C.; Delprat, S.; Gautier, E.; Chaker, M.; Margot, J.

2016-01-01

In this work, we demonstrate a full process for fabricating high aspect ratio diffraction optics for extreme ultraviolet lithography. The transmissive optics consists in nanometer scale tungsten patterns standing on flat, ultrathin (100 nm) and highly transparent (>85% at 13.5 nm) silicon membranes (diameter of 1 mm). These tungsten patterns were achieved using an innovative pseudo-Bosch etching process based on an inductively coupled plasma ignited in a mixture of SF6 and C4F8. Circular ultra-thin Si membranes were fabricated through a state-of-the-art method using direct-bonding with thermal difference. The silicon membranes were sputter-coated with a few hundred nanometers (100-300 nm) of stress-controlled tungsten and a very thin layer of chromium. Nanoscale features were written in a thin resist layer by electron beam lithography and transferred onto tungsten by plasma etching of both the chromium hard mask and the tungsten layer. This etching process results in highly anisotropic tungsten features at room temperature. The homogeneity and the aspect ratio of the advanced pattern transfer on the membranes were characterized with scanning electron microscopy after focus ion beam milling. An aspect ratio of about 6 for 35 nm size pattern is successfully obtained on a 1 mm diameter 100 nm thick Si membrane. The whole fabrication process is fully compatible with standard industrial semiconductor technology.

Recovery of Multilayer-Coated Zerodur and ULE Optics for Extreme-Ultraviolet Lithography by Recoating, Reactive-Ion Etching, and Wet-Chemical Processes.

PubMed

Mirkarimi, P B; Baker, S L; Montcalm, C; Folta, J A

2001-01-01

Extreme-ultraviolet lithography requires expensive multilayer-coated Zerodur or ULE optics with extremely tight figure and finish specifications. Therefore it is desirable to develop methods to recover these optics if they are coated with a nonoptimum multilayer films or in the event that the coating deteriorates over time owing to long-term exposure to radiation, corrosion, or surface contamination. We evaluate recoating, reactive-ion etching, and wet-chemical techniques for the recovery of Mo/Si and Mo/Be multilayer films upon Zerodur and ULE test optics. The recoating technique was successfully employed in the recovery of Mo/Si-coated optics but has the drawback of limited applicability. A chlorine-based reactive-ion etch process was successfully used to recover Mo/Si-coated optics, and a particularly large process window was observed when ULE optics were employed; this is an advantageous for large, curved optics. Dilute HCl wet-chemical techniques were developed and successfully demonstrated for the recovery of Mo/Be-coated optics as well as for Mo/Si-coated optics when Mo/Be release layers were employed; however, there are questions about the extendability of the HCl process to large optics and multiple coat and strip cycles. The technique of using carbon barrier layers to protect the optic during removal of Mo/Si in HF:HNO(3) also showed promise.

Development of inorganic resists for electron beam lithography: Novel materials and simulations

NASA Astrophysics Data System (ADS)

Jeyakumar, Augustin

Electron beam lithography is gaining widespread utilization as the semiconductor industry progresses towards both advanced optical and non-optical lithographic technologies for high resolution patterning. The current resist technologies are based on organic systems that are imaged most commonly through chain scission, networking, or a chemically amplified polarity change in the material. Alternative resists based on inorganic systems were developed and characterized in this research for high resolution electron beam lithography and their interactions with incident electrons were investigated using Monte Carlo simulations. A novel inorganic resist imaging scheme was developed using metal-organic precursors which decompose to form metal oxides upon electron beam irradiation that can serve as inorganic hard masks for hybrid bilayer inorganic-organic imaging systems and also as directly patternable high resolution metal oxide structures. The electron beam imaging properties of these metal-organic materials were correlated to the precursor structure by studying effects such as interactions between high atomic number species and the incident electrons. Optimal single and multicomponent precursors were designed for utilization as viable inorganic resist materials for sub-50nm patterning in electron beam lithography. The electron beam imaging characteristics of the most widely used inorganic resist material, hydrogen silsesquioxane (HSQ), was also enhanced using a dual processing imaging approach with thermal curing as well as a sensitizer catalyzed imaging approach. The interaction between incident electrons and the high atomic number species contained in these inorganic resists was also studied using Monte Carlo simulations. The resolution attainable using inorganic systems as compared to organic systems can be greater for accelerating voltages greater than 50 keV due to minimized lateral scattering in the high density inorganic systems. The effects of loading nanoparticles in an electron beam resist was also investigated using a newly developed hybrid Monte Carlo approach that accounts for multiple components in a solid film. The resolution of the nanocomposite resist process was found to degrade with increasing nanoparticle loading. Finally, the electron beam patterning of self-assembled monolayers, which were found to primarily utilize backscattered electrons from the high atomic number substrate materials to form images, was also investigated and characterized. It was found that backscattered electrons limit the resolution attainable at low incident electron energies.

Protein assay structured on paper by using lithography

NASA Astrophysics Data System (ADS)

Wilhelm, E.; Nargang, T. M.; Al Bitar, W.; Waterkotte, B.; Rapp, B. E.

2015-03-01

There are two main challenges in producing a robust, paper-based analytical device. The first one is to create a hydrophobic barrier which unlike the commonly used wax barriers does not break if the paper is bent. The second one is the creation of the (bio-)specific sensing layer. For this proteins have to be immobilized without diminishing their activity. We solve both problems using light-based fabrication methods that enable fast, efficient manufacturing of paper-based analytical devices. The first technique relies on silanization by which we create a flexible hydrophobic barrier made of dimethoxydimethylsilane. The second technique demonstrated within this paper uses photobleaching to immobilize proteins by means of maskless projection lithography. Both techniques have been tested on a classical lithography setup using printed toner masks and on a lithography system for maskless lithography. Using these setups we could demonstrate that the proposed manufacturing techniques can be carried out at low costs. The resolution of the paper-based analytical devices obtained with static masks was lower due to the lower mask resolution. Better results were obtained using advanced lithography equipment. By doing so we demonstrated, that our technique enables fabrication of effective hydrophobic boundary layers with a thickness of only 342 μm. Furthermore we showed that flourescine-5-biotin can be immobilized on the non-structured paper and be employed for the detection of streptavidinalkaline phosphatase. By carrying out this assay on a paper-based analytical device which had been structured using the silanization technique we proofed biological compatibility of the suggested patterning technique.

Report of the workshop on transferring X-ray Lithography Synchrotron (XLS) technology to industry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marcuse, W.

1987-01-01

This paper reports on plans to develop an x-ray synchrotron for use in lithography. The primary concern of the present paper is technology transfer from national laboratories to private industry. (JDH)

State-of-the-art EUV materials and processes for the 7nm node and beyond

NASA Astrophysics Data System (ADS)

Buitrago, Elizabeth; Meeuwissen, Marieke; Yildirim, Oktay; Custers, Rolf; Hoefnagels, Rik; Rispens, Gijsbert; Vockenhuber, Michaela; Mochi, Iacopo; Fallica, Roberto; Tasdemir, Zuhal; Ekinci, Yasin

2017-03-01

Extreme ultraviolet lithography (EUVL, λ = 13.5 nm) being the most likely candidate to manufacture electronic devices for future technology nodes is to be introduced in high volume manufacturing (HVM) at the 7 nm logic node, at least at critical lithography levels. With this impending introduction, it is clear that excellent resist performance at ultra-high printing resolutions (below 20 nm line/space L/S) is ever more pressing. Nonetheless, EUVL has faced many technical challenges towards this paradigm shift to a new lithography wavelength platform. Since the inception of chemically amplified resists (CARs) they have been the base upon which state-of-the art photoresist technology has been developed from. Resist performance as measured in terms of printing resolution (R), line edge roughness (LER), sensitivity (D or exposure dose) and exposure latitude (EL) needs to be improved but there are well known trade-off relationships (LRS trade-off) among these parameters for CARs that hamper their simultaneous enhancement. Here, we present some of the most promising EUVL materials tested by EUV interference lithography (EUV-IL) with the aim of resolving features down to 11 nm half-pitch (HP), while focusing on resist performance at 16 and 13 nm HP as needed for the 7 and 5 nm node, respectively. EUV-IL has enabled the characterization and development of new resist materials before commercial EUV exposure tools become available and is therefore a powerful research and development tool. With EUV-IL, highresolution periodic images can be printed by the interference of two or more spatially coherent beams through a transmission-diffraction grating mask. For this reason, our experiments have been performed by EUV-IL at Swiss Light Source (SLS) synchrotron facility located at the Paul Scherrer Institute (PSI). Having the opportunity to test hundreds of EUVL materials from vendors and research partners from all over the world, PSI is able to give a global update on some of the most promising materials tested.

Diffractive optical elements on non-flat substrates using electron beam lithography

NASA Technical Reports Server (NTRS)

Maker, Paul D. (Inventor); Muller, Richard E. (Inventor); Wilson, Daniel W. (Inventor)

2002-01-01

The present disclosure describes a technique for creating diffraction gratings on curved surfaces with electron beam lithography. The curved surface can act as an optical element to produce flat and aberration-free images in imaging spectrometers. In addition, the fabrication technique can modify the power structure of the grating orders so that there is more energy in the first order than for a typical grating. The inventors noticed that by using electron-beam lithography techniques, a variety of convex gratings that are well-suited to the requirements of imaging spectrometers can be manufactured.

Controlling large-scale film morphology by phase manipulation in interference lithography

NASA Astrophysics Data System (ADS)

Lu, Cheng; Hu, X. K.; Dimov, S. S.; Lipson, R. H.

2007-10-01

An experimental arrangement is described where a Babinet-Soleil compensator is inserted into the path of one of the three beams used for noncoplanar beam interference lithography. This birefringent element can change the phase of the beam so that either a positive two-dimensional pattern or an inverselike structure is generated in a photoresist without disturbing the mechanical geometry of the setup. Simulations are presented that confirm the validity of this approach. Large defect-free sample areas (>1 cm2) with submicrometer periodic patterns were obtained by expanding the laser beams used in the lithography experiment.

Polarization control in flexible interference lithography for nano-patterning of different photonic structures with optimized contrast.

PubMed

He, Jianfang; Fang, Xiaohui; Lin, Yuanhai; Zhang, Xinping

2015-05-04

Half-wave plates were introduced into an interference-lithography scheme consisting of three fibers that were arranged into a rectangular triangle. Such a flexible and compact geometry allows convenient tuning of the polarizations of both the UV laser source and each branch arm. This not only enables optimization of the contrast of the produced photonic structures with expected square lattices, but also multiplies the nano-patterning functions of a fixed design of fiber-based interference lithography. The patterns of the photonic structures can be thus tuned simply by rotating a half-wave plate.

Lithographic technologies that haven't (yet) made it: lessons learned (Plenary Paper)

NASA Astrophysics Data System (ADS)

Pease, R. Fabian

2005-05-01

Since the introduction of the integrated circuit we have been inventing ways to extend the feature resolution beyond the optical limit. Using a focused electron beam linewidths of less than 100nm were demonstrated in 1960 and a mere three years later we achieved a 10nm feature. In the 1970's and 80's several semiconductor manufacturers undertook programs to introduce electron beam lithography (EBL) and X-ray lithography (XRL) based primarily on the rationale that both had superior resolution. Those programs consumed many millions of dollars and yielded, and continue to yield, very imaginative systems but have failed to displace deep ultraviolet lithography (DUVL) despite its inferior resolution. One lesson learned is an old one: to displace an established technology the new must be 10x better than the old. Thus it is irrational that even today a form of XRL employing 13nm X-rays is still being pursued despite showing performance inferior to that of DUVL. What constitutes 'better' depends on the application and thus there are niche markets for forms of lithography other than DUVL. But for mainstream semiconductor chip manufacturing there is no prospect within the next decade of displacing optical lithography which can be stretched even to 10nm features by applying novel techniques coupled with massive computation.

Rapid prototyping of Fresnel zone plates via direct Ga(+) ion beam lithography for high-resolution X-ray imaging.

PubMed

Keskinbora, Kahraman; Grévent, Corinne; Eigenthaler, Ulrike; Weigand, Markus; Schütz, Gisela

2013-11-26

A significant challenge to the wide utilization of X-ray microscopy lies in the difficulty in fabricating adequate high-resolution optics. To date, electron beam lithography has been the dominant technique for the fabrication of diffractive focusing optics called Fresnel zone plates (FZP), even though this preparation method is usually very complicated and is composed of many fabrication steps. In this work, we demonstrate an alternative method that allows the direct, simple, and fast fabrication of FZPs using focused Ga(+) beam lithography practically, in a single step. This method enabled us to prepare a high-resolution FZP in less than 13 min. The performance of the FZP was evaluated in a scanning transmission soft X-ray microscope where nanostructures as small as sub-29 nm in width were clearly resolved, with an ultimate cutoff resolution of 24.25 nm, demonstrating the highest first-order resolution for any FZP fabricated by the ion beam lithography technique. This rapid and simple fabrication scheme illustrates the capabilities and the potential of direct ion beam lithography (IBL) and is expected to increase the accessibility of high-resolution optics to a wider community of researchers working on soft X-ray and extreme ultraviolet microscopy using synchrotron radiation and advanced laboratory sources.

Maskless, reticle-free, lithography

DOEpatents

Ceglio, N.M.; Markle, D.A.

1997-11-25

A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies. 7 figs.

Maskless, reticle-free, lithography

DOEpatents

Ceglio, Natale M.; Markle, David A.

1997-11-25

A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies.

SOR Lithography in West Germany

NASA Astrophysics Data System (ADS)

Heuberger, Anton

1989-08-01

The 64 Mbit DRAM will represent the first generation of integrated circuits which cannot be produced reasonably by means of optical lithography techniques. X-ray lithography using synchrotron radiation seems to be the most promising method in overcoming the problems in the sub-0.5 micron range. The first year of production of the 64 Mbit DRAM will be 1995 or 1996. This means that X-ray lithography has to show its applicability in an industrial environment by 1992 and has to prove that the specifications of a 64 Mbit DRAM technology can actually be achieved. Part of this task is a demonstration of production suitable equipment such as the X-ray stepper, including an appropriate X-ray source and measurement and inspection tools. The most important bottlenecks on the way toward reaching these goals are linked to the 1 x scale mask technology, especially the pattern definition accuracy and zero level of printing defects down to the order of magnitude of 50 nm. Specifically, fast defect detection methods on the basis of high resolution e-beam techniques and repair methods have to be developed. The other problems of X-ray lithography, such as high quality single layer X-ray resists, X-ray sources and stepper including alignment are either well on the way or are already solved.

Scalable imprinting of shape-specific polymeric nanocarriers using a release layer of switchable water solubility.

PubMed

Agarwal, Rachit; Singh, Vikramjit; Jurney, Patrick; Shi, Li; Sreenivasan, S V; Roy, Krishnendu

2012-03-27

There is increasing interest in fabricating shape-specific polymeric nano- and microparticles for efficient delivery of drugs and imaging agents. The size and shape of these particles could significantly influence their transport properties and play an important role in in vivo biodistribution, targeting, and cellular uptake. Nanoimprint lithography methods, such as jet-and-flash imprint lithography (J-FIL), provide versatile top-down processes to fabricate shape-specific, biocompatible nanoscale hydrogels that can deliver therapeutic and diagnostic molecules in response to disease-specific cues. However, the key challenges in top-down fabrication of such nanocarriers are scalable imprinting with biological and biocompatible materials, ease of particle-surface modification using both aqueous and organic chemistry as well as simple yet biocompatible harvesting. Here we report that a biopolymer-based sacrificial release layer in combination with improved nanocarrier-material formulation can address these challenges. The sacrificial layer improves scalability and ease of imprint-surface modification due to its switchable solubility through simple ion exchange between monovalent and divalent cations. This process enables large-scale bionanoimprinting and efficient, one-step harvesting of hydrogel nanoparticles in both water- and organic-based imprint solutions. © 2012 American Chemical Society

Laser direct writing and inkjet printing for a sub-2 μm channel length MoS2 transistor with high-resolution electrodes

NASA Astrophysics Data System (ADS)

Kwon, Hyuk-Jun; Chung, Seungjun; Jang, Jaewon; Grigoropoulos, Costas P.

2016-10-01

Patterns formed by the laser direct writing (LDW) lithography process are used either as channels or barriers for MoS2 transistors fabricated via inkjet printing. Silver (Ag) nanoparticle ink is printed over patterns formed on top of the MoS2 flakes in order to construct high-resolution source/drain (S/D) electrodes. When positive photoresist is used, the produced grooves are filled with inkjetted Ag ink by capillary forces. On the other hand, in the case of negative photoresist, convex barrier-like patterns are written on the MoS2 flakes and patterns, dividing the printed Ag ink into the S/D electrodes by self-alignment. LDW lithography combined with inkjet printing is applied to MoS2 thin-film transistors that exhibit moderate electrical performance such as mobility and subthreshold swing. However, especially in the linear operation regime, their features are limited by the contact effect. The Y-function method can exclude the contact effect and allow proper evaluation of the maximum available mobility and contact resistance. The presented fabrication methods may facilitate the development of cost-effective fabrication processes.

Scalable Manufacturing of Plasmonic Nanodisk Dimers and Cusp Nanostructures using Salting-out Quenching Method and Colloidal Lithography

PubMed Central

Juluri, Bala Krishna; Chaturvedi, Neetu; Hao, Qingzhen; Lu, Mengqian; Velegol, Darrell; Jensen, Lasse; Huang, Tony Jun

2014-01-01

Localization of large electric fields in plasmonic nanostructures enables various processes such as single molecule detection, higher harmonic light generation, and control of molecular fluorescence and absorption. High-throughput, simple nanofabrication techniques are essential for implementing plasmonic nanostructures with large electric fields for practical applications. In this article we demonstrate a scalable, rapid, and inexpensive fabrication method based on the salting-out quenching technique and colloidal lithography for the fabrication of two types of nanostructures with large electric field: nanodisk dimers and cusp nanostructures. Our technique relies on fabricating polystyrene doublets from single beads by controlled aggregation and later using them as soft masks to fabricate metal nanodisk dimers and nanocusp structures. Both of these structures have a well-defined geometry for the localization of large electric fields comparable to structures fabricated by conventional nanofabrication techniques. We also show that various parameters in the fabrication process can be adjusted to tune the geometry of the final structures and control their plasmonic properties. With advantages in throughput, cost, and geometric tunability, our fabrication method can be valuable in many applications that require plasmonic nanostructures with large electric fields. PMID:21692473

A microfluidic chip integrated with a high-density PDMS-based microfiltration membrane for rapid isolation and detection of circulating tumor cells.

PubMed

Fan, Xiaoyun; Jia, Chunping; Yang, Jun; Li, Gang; Mao, Hongju; Jin, Qinghui; Zhao, Jianlong

2015-09-15

Isolation of circulating tumor cells (CTCs) by size exclusion is a widely researched technique that offers the advantage of capturing tumor cells without reliance on cell surface expression markers. In this work, we report the development of a novel polydimethylsiloxane (PDMS) membrane filter-based microdevice for rapid and highly efficient isolation of CTCs from peripheral blood. A precise and highly porous PDMS microfilter was fabricated and integrated into the microfiltration chip by combining a sacrificial transferring film with a sandwich molding method. We achieved >90% recovery when isolating lung cancer cells from spiked blood samples, with a relatively high processing throughput of 10 mL/h. In contrast to existing CTC filtration systems, which rely on low-porosity track-etch filters or expensive lithography-based filters, our microfiltration chip does not require complex e-beam lithography or the reactive ion etching process, therefore it offers a low-cost alternative tool for highly efficient CTC enrichment and in situ analysis. Thus, this new microdevice has the potential for use in routine monitoring of cancer development and cancer therapy in a clinical setting. Copyright © 2015 Elsevier B.V. All rights reserved.

Precuring implant photoresists for shrink and patterning control

NASA Astrophysics Data System (ADS)

Winroth, Gustaf; Rosseel, Erik; Delvaux, Christie; Sanchez, Efrain Altamirano; Ercken, Monique

2013-10-01

193-nm compatible photoresists are turning out to be the new platform for implant lithography, due to the increasing requirements in both resolution and overlay. Shrinkage of such resists is becoming progressively the most topical issue for aggressive nodes, where conventional pretreatments from older resist platforms, such as ultraviolet flood exposures, are not directly transferable to (meth-)acrylate-type resists. The precuring options available for state-of-the-art implant photoresists for 193-nm lithography is explored, in which we target to reduce the shrinkage during implantation for trenching critical dimensions (CDs) that are relevant for nodes <20 nm. An extensive study comprising different approaches, including laser-, ion-, and electron-based treatments, is presented. Each treatment is individually investigated with the aim to find not only a valid pretreatment for shrinkage control during implantation, but also to understand what effect alternative pretreatments have on the morphology and the CDs of thick photoresists used as implant stopping layers. Viable options for further process optimization in order to integrate them into device process flows are found. To this extent, the shrink behavior after pretreatment is shown, and the additional shrink dynamics after implantation are compared.

Nanohole and dot patterning processes on quartz substrate by R-θ electron beam lithography and nanoimprinting

NASA Astrophysics Data System (ADS)

Watanabe, Tsuyoshi; Taniguchi, Kazutake; Suzuki, Kouta; Iyama, Hiromasa; Kishimoto, Shuji; Sato, Takashi; Kobayashi, Hideo

2016-06-01

Fine hole and dot patterns with bit pitches (bp’s) of less than 40 nm were fabricated in the circular band area of a quartz substrate by R-θ electron beam lithography (EBL), reactive ion etching (RIE), and nanoimprinting. These patterning processes were studied to obtain minimum pitch sizes of hole and dot patterns without pattern collapse. The patterning on the circular band was aimed to apply these patterning processes to future high-density bit-patterned media (BPM) for hard disk drive (HDD) and permanent memory for the long life archiving of digital data. In hole patterning, a minimum-22-nm-bp and 8.2-nm-diameter pattern (1.3 Tbit/in.2) was obtained on a quartz substrate by optimizing the R-θ EBL and RIE processes. Dot patterns were replicated on another quartz substrate by nanoimprinting using a hole-patterned quartz substrate as a master mold followed by RIE. In dot patterning, a minimum-30-nm-bp and 18.5-nm-diameter pattern (0.7 Tbit/in.2) was obtained by introducing new descum conditions. It was observed that the minimum bp of successful patterning increased as the fabrication process proceeded, i.e., from 20 nm bp in the first EBL process to 30 nm bp in the last quartz dot patterning process. From the measured diameters of the patterns, it was revealed that pattern collapse was apt to occur when the value of average diameter plus 3 sigma of diameter was close to the bp. It was suggested that multiple fabrication processes caused the degradation of pattern quality; therefore, hole patterning is more suitable than dot patterning for future applications owing to the lower quality degradation by its simple fabrication process.

30 GHz monolithic balanced mixers using an ion-implanted FET-compatible 3-inch GaAs wafer process technology

NASA Technical Reports Server (NTRS)

Bauhahn, P.; Contolatis, A.; Sokolov, V.; Chao, C.

1986-01-01

An all ion-implanted Schottky barrier mixer diode which has a cutoff frequency greater than 1000 GHz has been developed. This new device is planar and FET-compatible and employs a projection lithography 3-inch wafer process. A Ka-band monolithic balanced mixer based on this device has been designed, fabricated and tested. A conversion loss of 8 dB has been measured with a LO drive of 10 dBm at 30 GHz.

The range and intensity of backscattered electrons for use in the creation of high fidelity electron beam lithography patterns.

PubMed

Czaplewski, David A; Holt, Martin V; Ocola, Leonidas E

2013-08-02

We present a set of universal curves that predict the range and intensity of backscattered electrons which can be used in conjunction with electron beam lithography to create high fidelity nanoscale patterns. The experimental method combines direct write dose, backscattered dose, and a self-reinforcing pattern geometry to measure the dose provided by backscattered electrons to a nanoscale volume on the substrate surface at various distances from the electron source. Electron beam lithography is used to precisely control the number and position of incident electrons on the surface of the material. Atomic force microscopy is used to measure the height of the negative electron beam lithography resist. Our data shows that the range and the intensity of backscattered electrons can be predicted using the density and the atomic number of any solid material, respectively. The data agrees with two independent Monte Carlo simulations without any fitting parameters. These measurements are the most accurate electron range measurements to date.

Highly Stable Nanolattice Structures using Nonlinear Laser Lithography

NASA Astrophysics Data System (ADS)

Yavuz, Ozgun; Tokel, Onur; Ergecen, Emre; Pavlov, Ihor; Makey, Ghaith; Ilday, Fatih Omer

Periodic nanopatterning is crucial for multiple technologies, including photovoltaics and display technologies. Conventional optical lithography techniques require complex masks, while e-beam and ion-beam lithography require expensive equipment. With the Nonlinear Laser Lithography (NLL) technique, we had recently shown that various surfaces can be covered with extremely periodic nanopatterns with ultrafast lasers through a single-step, maskless and inexpensive method. Here, we expand NLL nanopatterns to flexible materials, and also present a fully predictive model for the formation of NLL nanostructures as confirmed with experiments. In NLL, a nonlocal positive feedback mechanism (dipole scattering) competes with a rate limiting negative feedback mechanism. Here, we show that judicious use of the laser polarisation can constrain the lattice symmetry, while the nonlinearities regulate periodicity. We experimentally demonstrate that in addition to one dimensional periodic stripes, two dimensional lattices can be produced on surfaces. In particular, hexagonal and square lattices were produced, which are highly desired for display technologies. Notably, with this approach, we can tile flexible substrates, which can find applications in next generation display technologies.

Manipulation and simulations of thermal field profiles in laser heat-mode lithography

NASA Astrophysics Data System (ADS)

Wei, Tao; Wei, Jingsong; Wang, Yang; Zhang, Long

2017-12-01

Laser heat-mode lithography is a very useful method for high-speed fabrication of large-area micro/nanostructures. To obtain nanoscale pattern structures, one needs to manipulate the thermal diffusion channels. This work reports the manipulation of the thermal diffusion in laser heat-mode lithography and provides methods to restrain the in-plane thermal diffusion and improve the out-of-plane thermal diffusion. The thermal field profiles in heat-mode resist thin films have been given. It is found that the size of the heat-spot can be decreased by decreasing the thickness of the heat-mode resist thin films, inserting the thermal conduction layers, and shortening the laser irradiation time. The optimized laser writing strategy is also given, where the in-plane thermal diffusion is completely restrained and the out-of-plane thermal diffusion is improved. The heat-spot size is almost equal to that of the laser spot, accordingly. This work provides a very important guide to laser heat-mode lithography.

Optimal design of wide-view-angle waveplate used for polarimetric diagnosis of lithography system

NASA Astrophysics Data System (ADS)

Gu, Honggang; Jiang, Hao; Zhang, Chuanwei; Chen, Xiuguo; Liu, Shiyuan

2016-03-01

The diagnosis and control of the polarization aberrations is one of the main concerns in a hyper numerical aperture (NA) lithography system. Waveplates are basic and indispensable optical components in the polarimetric diagnosis tools for the immersion lithography system. The retardance of a birefringent waveplate is highly sensitive to the incident angle of the light, which makes the conventional waveplate not suitable to be applied in the polarimetric diagnosis for the immersion lithography system with a hyper NA. In this paper, we propose a method for the optimal design of a wideview- angle waveplate by combining two positive waveplates made from magnesium fluoride (MgF2) and two negative waveplates made from sapphire using the simulated annealing algorithm. Theoretical derivations and numerical simulations are performed and the results demonstrate that the maximum variation in the retardance of the optimally designed wide-view-angle waveplate is less than +/- 0.35° for a wide-view-angle range of +/- 20°.

Development of nanostencil lithography and its applications for plasmonics and vibrational biospectroscopy

NASA Astrophysics Data System (ADS)

Aksu, Serap

Development of low cost nanolithography tools for precisely creating a variety of nanostructure shapes and arrangements in a high-throughput fashion is crucial for next generation biophotonic technologies. Although existing lithography techniques offer tremendous design flexibility, they have major drawbacks such as low-throughput and fabrication complexity. In addition the demand for the systematic fabrication of sub-100 nm structures on flexible, stretchable, non-planar nanoelectronic/photonic systems and multi-functional materials has fueled the research for innovative fabrication methods in recent years. This thesis research investigates a novel lithography approach for fabrication of engineered plasmonic nanostructures and metamaterials operating at visible and infrared wavelengths. The technique is called Nanostencil Lithography (NSL) and relies on direct deposition of materials through nanoapertures on a stencil. NSL enables high throughput fabrication of engineered antenna arrays with optical qualities similar to the ones fabricated by standard electron beam lithography. Moreover, nanostencils can be reused multiple times to fabricate series of plasmonic nanoantenna arrays with identical optical responses enabling high throughput manufacturing. Using nanostencils, very precise nanostructures could be fabricated with 10 nm accuracy. Furthermore, this technique has flexibility and resolution to create complex plasmonic nanostructure arrays on the substrates that are difficult to work with e-beam and ion beam lithography tools. Combining plasmonics with polymeric materials, biocompatible surfaces or curvilinear and non-planar objects enable unique optical applications since they can preserve normal device operation under large strain. In this work, mechanically tunable flexible optical materials and spectroscopy probes integrated on fiber surfaces that could be used for a wide range of applications are demonstrated. Finally, the first application of NSL fabricated low cost infrared nanoantenna arrays for plasmonically enhanced vibrational biospectroscopy is presented. Detection of immunologically important protein monolayers with thickness as small as 3 nm, and antibody assays are demonstrated using nanoantenna arrays fabricated with reusable nanostencils. The results presented indicate that nanostencil lithography is a promising method for reducing the nano manufacturing cost while enhancing the performance of biospectroscopy tools for biology and medicine. As a single step and low cost nanofabrication technique, NSL could facilitate the manufacturing of biophotonic technologies for real-world applications.

Coaxial Lithography

NASA Astrophysics Data System (ADS)

Ozel, Tuncay

The optical and electrical properties of heterogeneous nanowires are profoundly related to their composition and nanoscale architecture. However, the intrinsic constraints of conventional synthetic and lithographic techniques have limited the types of multi-compositional nanowires that can be realized and studied in the laboratory. This thesis focuses on bridging templated electrochemical synthesis and lithography for expanding current synthetic capabilities with respect to materials generality and the ability to tailor two-dimensional growth in the formation of core-shell structures for the rational design and preparation of nanowires with very complex architectures that cannot be made by any other techniques. Chapter 1 introduces plasmonics, templated electrochemical synthesis, and on-wire lithography concepts and their significances within chemistry and materials science. Chapter 2 details a powerful technique for the deposition of metals and semiconductors with nanometer resolution in segment and gap lengths using on-wire lithography, which serves as a new platform to explore plasmon-exciton interactions in the form of long-range optical nanoscale rulers. Chapter 3 highlights an approach for the electrochemical synthesis of solution dispersible core-shell polymeric and inorganic semiconductor nanowires with metallic leads. A photodetector based on a single core-shell semiconductor nanowire is presented to demonstrate the functionality of the nanowires produced using this approach. Chapter 4 describes a new materials general technique, termed coaxial lithography (COAL), bridging templated electrochemical synthesis and lithography for generating coaxial nanowires in a parallel fashion with sub-10 nanometer resolution in both axial and radial dimensions. Combinations of coaxial nanowires composed of metals, metal oxides, metal chalcogenides, conjugated polymers, and a core/shell semiconductor nanowire with an embedded plasmonic nanoring are presented to demonstrate the possibilities afforded by COAL. Chapter 5 addresses the use of COAL for the synthesis of solution dispersible metal nanorings and nanotubes with exceptional architectural tailorability of inner diameter, outer diameter, and length leading to precise spectral control over the resulting plasmonic fields ranging from visible to the near-IR. Chapter 6 is an outlook on templated electrochemical synthesis using coaxial lithography and highlights a few promising applications from nanoparticle assembly to light-matter interactions.

Improvement of a block co-polymer (PS-b-PDMS) template etch profile using amorphous carbon layer

NASA Astrophysics Data System (ADS)

Oh, JiSoo; Oh, Jong Sik; Sung, DaIn; Yim, SoonMin; Song, SeungWon; Yeom, GeunYoung

2017-03-01

Block copolymers (BCPs) are consisted of at least two types of monomers which have covalent bonding. One of the widely investigated BCPs is polystyrene-block-polydimethylsiloxane (PS-b-PDMS), which is used as an alternative patterning method for various deep nanoscale devices due to its high Flory-Huggins interaction parameter (χ), such as optical devices and transistors, replacing conventional photolithography. As an alternate or supplementary nextgeneration lithography technology to extreme ultraviolet lithography (EUVL), BCP lithography utilizing the DSA of BCP has been actively studied. However, the nanoscale BCP mask material is easily damaged by the plasma and has a very low etch selectivity over bottom semiconductor materials, because it is composed of polymeric materials even though it contains Si in PDMS. In this study, an amorphous carbon layer (ACL) was inserted as a hardmask material between BCP and materials to be patterned, and, by using O2 plasmas, the characteristics of dry etching of ACL for high aspect ratio (HAR) using a 10 nm PDMS pattern were investigated. The results showed that, by using a PS-b-PDMS pattern with an aspect ratio of 0.3 0.9:1, a HAR PDMS/ACL double layer mask with an aspect ratio of 10:1 could be fabricated. In addition, by the optimization of the plasma etch process, ACL masks with excellent sidewall roughness (SWR,1.35 nm) and sidewall angle (SWA, 87.9˚) could be fabricated.

Scatterometry measurement of nested lines, dual space, and rectangular contact CD on phase-shift masks

NASA Astrophysics Data System (ADS)

Lee, Kyung M.; Yedur, Sanjay; Henrichs, Sven; Tavassoli, Malahat; Baik, Kiho

2007-03-01

Evaluation of lithography process or stepper involves very large quantity of CD measurements and measurement time. In this paper, we report on a application of Scatterometry based metrology for evaluation of binary photomask lithography. Measurements were made on mask level with ODP scatterometer then on wafer with CD-SEM. 4 to 1 scaling from mask to wafer means 60nm line on wafer translates to 240nm on mask, easily measurable on ODP. Calculation of scatterometer profile information was performed by a in-situ library-based analysis (5sec/site). We characterized the CD uniformity, linearity, and metal film thickness uniformity. Results show that linearity measured from fixed-pitch, varying line/space ratio targets show good correlation to top-down CD-SEM with R2 of more than 0.99. ODP-SEM correlation results for variable pitch shows that careful examination of scatterometer profile results in order to obtain better correlation to CD SEM, since both tools react differently to the target profile variation. ODP results show that global CD distribution is clearly measurable with less outliers compared to CD SEM data. This is thought to be due to 'averaging' effect of scatterometer. The data show that Scatterometry provides a nondestructive and faster mean of characterizing lithography stepper performanceprofiles. APSM 1st level (before Cr removal) 'dual-space' CDs and EPSM rectangular contacts were also measured with and results demonstrates that Scatterometer is capable of measuring these targets with reasonable correlation to SEM.

Robust integration schemes for junction-based modulators in a 200mm CMOS compatible silicon photonic platform (Conference Presentation)

NASA Astrophysics Data System (ADS)

Szelag, Bertrand; Abraham, Alexis; Brision, Stéphane; Gindre, Paul; Blampey, Benjamin; Myko, André; Olivier, Segolene; Kopp, Christophe

2017-05-01

Silicon photonic is becoming a reality for next generation communication system addressing the increasing needs of HPC (High Performance Computing) systems and datacenters. CMOS compatible photonic platforms are developed in many foundries integrating passive and active devices. The use of existing and qualified microelectronics process guarantees cost efficient and mature photonic technologies. Meanwhile, photonic devices have their own fabrication constraints, not similar to those of cmos devices, which can affect their performances. In this paper, we are addressing the integration of PN junction Mach Zehnder modulator in a 200mm CMOS compatible photonic platform. Implantation based device characteristics are impacted by many process variations among which screening layer thickness, dopant diffusion, implantation mask overlay. CMOS devices are generally quite robust with respect to these processes thanks to dedicated design rules. For photonic devices, the situation is different since, most of the time, doped areas must be carefully located within waveguides and CMOS solutions like self-alignment to the gate cannot be applied. In this work, we present different robust integration solutions for junction-based modulators. A simulation setup has been built in order to optimize of the process conditions. It consist in a Mathlab interface coupling process and device electro-optic simulators in order to run many iterations. Illustrations of modulator characteristic variations with process parameters are done using this simulation setup. Parameters under study are, for instance, X and Y direction lithography shifts, screening oxide and slab thicknesses. A robust process and design approach leading to a pn junction Mach Zehnder modulator insensitive to lithography misalignment is then proposed. Simulation results are compared with experimental datas. Indeed, various modulators have been fabricated with different process conditions and integration schemes. Extensive electro-optic characterization of these components will be presented.