Science.gov

Sample records for low-temperature thermoelectric properties

  1. Design, crystal growth, and physical properties of low-temperature thermoelectric materials

    NASA Astrophysics Data System (ADS)

    Fuccillo, Michael K.

    Thermoelectric materials serve as the foundation for two important modern technologies, namely 1) solid-state cooling, which enables small-area refrigeration without vibrations or moving parts, and 2) thermoelectric power generation, which has important implications for waste heat recovery and improved sources of alternative energy. Although the overall field of thermoelectrics research has been active for decades, and several consumer and industrial products have already been commercialized, the design and synthesis of new thermoelectrics that outperform long-standing state of the art materials has proven extremely challenging. This is particularly true for low-temperature refrigeration applications, which is the focus of this work; however, scientific advances in this area generally support power generation as well. In order to achieve more efficient materials for virtually all thermoelectric applications, improved materials design principles must be developed and synthetic procedures must be better understood. We aim to contribute to these goals by studying two classes of materials, namely 1) the tetradymites Bi2TeSe 2 and Bi2Te2Se, which are close relatives of state of the art thermoelectric cooling materials, and 2) Kondo insulating (-like) FeSb2 and FeSi, which possess anomalously enhanced low-temperature thermoelectric properties that arise from exotic electronic and magnetic properties. The organization of this dissertation is as follows: Chapter 1 is a brief perspective on solid-state chemistry. Chapter 2 presents experimental methods for synthesizing and characterizing thermoelectric materials. In Chapter 3, two original research projects are discussed: first, work on the tetradymite Bi2TeSe2 doped with Sb to achieve an n- to p-type transition, and second, the tetradymite Bi2Te2Se with chemical defects through two different methods. Chapter 4 gives the magnetic and transport properties of FeSb 2--RuSb2 alloys, a family of compounds exemplifying what we

  2. Thermoelectric properties of Au-based metallic glass at low temperatures

    NASA Astrophysics Data System (ADS)

    Pryadun, V. V.; Louzguine-Luzgin, D. V.; Shvanskaya, L. V.; Vasiliev, A. N.

    2015-04-01

    The thermoelectric properties of Au49Cu26.9Ag5.5Pd2.3Si16.3 glassy alloy have been studied using electrical resistivity, thermal conductivity and Seebeck coefficient measurements over temperature range 2-390 K. At heating, resistivity ρ decreases in a power-law manner from residual value ρ0 ˜ 150 μΩ cm. The temperature coefficient of resistivity, α = ρ-1(∂ρ/∂ T), is rather small and varies non-monotonously. Thermal conductivity κ rises linearly at low temperatures; it exhibits a plateau-like feature and sharply increases at elevated temperatures. Seebeck coefficient S increases with temperature and exhibits a characteristic "knee" feature. At elevated temperatures, S increases linearly with temperature but with a different slope. It total, thermoelectric properties of Au-based glassy alloy demonstrate behavior of a highly disordered system in a most pronounced manner.

  3. Low temperature thermoelectric properties of Cu intercalated TiSe2: a charge density wave material

    NASA Astrophysics Data System (ADS)

    Bhatt, Ranu; Basu, Ranita; Bhattacharya, S.; Singh, A.; Aswal, D. K.; Gupta, S. K.; Okram, G. S.; Ganesan, V.; Venkateshwarlu, D.; Surgers, C.; Navaneethan, M.; Hayakawa, Y.

    2013-05-01

    In this communication, we investigate the thermoelectric properties of a charge density wave material TiSe2 upon Cu intercalation. Polycrystalline Cu x TiSe2 ( x=0-0.11) alloys were synthesized using solid state sintering process and their morphological and structural properties were investigated. The material grows in layered morphology and the c-lattice parameter increases linearly with x. The temperature dependent resistivity measured in the 300-5 K range, shows that increasing x leads to a systematic transition from charge density wave state to the metallic state. For x=0.11, the room temperature thermoelectric figure-of-merit is found to be 0.104, which is higher by seven orders in magnitude (i.e. 1.93×10-8) measured for pristine TiSe2 and comparable to the other reported thermoelectric materials. These results show that Cu x TiSe2 are a potential material for the low temperature thermoelectric applications.

  4. Transport properties of cubic crystalline Ge2Sb2Te5: a potential low-temperature thermoelectric material.

    DOE PAGES

    Sun, Jifeng; Mukhopadhyay, Saikat; Subedi, Alaska; Siegrist, Theo; Singh, David J.

    2015-03-26

    Ge2Sb2Te5 (GST) has been widely used as a popular phase change material. In this study, we show that it exhibits high Seebeck coe cients 200 - 300 μV/K in its cubic crystalline phase (c-GST) at remarkably high p-type doping levels of 1 1019 - 6 1019 cm-3 at room temperature. More importantly, at low temperature (T = 200 K), the Seebeck coe cient was found to exceed 200 μV/K for a doping range 1 1019 - 3.5 1019 cm-3. Given that the lattice thermal conductivity in this phase has already been measured to be extremely low ( 0.7 W/m-K atmore » 300 K), our results suggest the possibility of using c-GST as a low-temperature thermoelectric material.« less

  5. Thermoelectric harvesting of low temperature natural/waste heat

    NASA Astrophysics Data System (ADS)

    Rowe, David Michael

    2012-06-01

    Apart from specialized space requirements current development in applications of thermoelectric generation mainly relate to reducing harmful carbon emissions and decreasing costly fuel consumption through the recovery of exhaust heat from fossil fuel powered engines and emissions from industrial utilities. Focus on these applications is to the detriment of the wider exploitations of thermoelectrics with other sources of heat energy, and in particular natural occurring and waste low temperature heat, receiving little, if any, attention. In this presentation thermoelectric generation applications, both potential and real in harvesting low temperature waste/natural heat are reviewed. The use of thermoelectrics to harvest solar energy, ocean thermal energy, geothermal heat and waste heat are discussed and their credibility as future large-scale sources of electrical power assessed.

  6. Thermoelectric Materials Development for Low Temperature Geothermal Power Generation

    DOE Data Explorer

    Tim Hansen

    2016-01-29

    Data includes characterization results for novel thermoelectric materials developed specifically for power generation from low temperature geothermal brines. Materials characterization data includes material density, thickness, resistance, Seebeck coefficient. This research was carried out by Novus Energy Partners in Cooperation with Southern Research Institute for a Department of Energy Sponsored Project.

  7. Low Temperature Thermoelectric Characterization of Ag2Se

    NASA Astrophysics Data System (ADS)

    Drymiotis, Fivos; Neff, David; Coney, Michael; Bux, Sabah; Fleurial, Jean-Pierre

    Previous work on Ag2Se showed that this n-type material could have a dimensionless thermoelectric figure of merit (zT) ~1 at room temperature, due to its high mobility and low thermal conductivity. However, the results from the initial reports have not yet been reproduced. In this talk, I will summarize our efforts to replicate the aforementioned thermoelectric performance, and also discuss the experimental setup that we utilized in order to perform the low-temperature thermoelectric characterization of this material. This work was performed at the California Institute of Technology/Jet Propulsion Laboratory under contract with the National Aeronautics and Space Administration. This work was supported by JPL's Research and Technology Development Program.

  8. Transport properties of cubic crystalline Ge2Sb2Te5: a potential low-temperature thermoelectric material.

    SciTech Connect

    Sun, Jifeng; Mukhopadhyay, Saikat; Subedi, Alaska; Siegrist, Theo; Singh, David J.

    2015-03-26

    Ge2Sb2Te5 (GST) has been widely used as a popular phase change material. In this study, we show that it exhibits high Seebeck coe cients 200 - 300 μV/K in its cubic crystalline phase (c-GST) at remarkably high p-type doping levels of 1 1019 - 6 1019 cm-3 at room temperature. More importantly, at low temperature (T = 200 K), the Seebeck coe cient was found to exceed 200 μV/K for a doping range 1 1019 - 3.5 1019 cm-3. Given that the lattice thermal conductivity in this phase has already been measured to be extremely low ( 0.7 W/m-K at 300 K), our results suggest the possibility of using c-GST as a low-temperature thermoelectric material.

  9. p -type Bi2Se3 for topological insulator and low-temperature thermoelectric applications

    NASA Astrophysics Data System (ADS)

    Hor, Y. S.; Richardella, A.; Roushan, P.; Xia, Y.; Checkelsky, J. G.; Yazdani, A.; Hasan, M. Z.; Ong, N. P.; Cava, R. J.

    2009-05-01

    The growth and elementary properties of p -type Bi2Se3 single crystals are reported. Based on a hypothesis about the defect chemistry of Bi2Se3 , the p -type behavior has been induced through low-level substitutions (1% or less) of Ca for Bi. Scanning tunneling microscopy is employed to image the defects and establish their charge. Tunneling and angle-resolved photoemission spectra show that the Fermi level has been lowered into the valence band by about 400 meV in Bi1.98Ca0.02Se3 relative to the n -type material. p -type single crystals with ab -plane Seebeck coefficients of +180μV/K at room temperature are reported. These crystals show an anomalous peak in the Seebeck coefficient at low temperatures, reaching +120μVK-1 at 7 K, giving them a high thermoelectric power factor at low temperatures. In addition to its interesting thermoelectric properties, p -type Bi2Se3 is of substantial interest for studies of technologies and phenomena proposed for topological insulators.

  10. High thermoelectric figure of merit in nanocrystalline polyaniline at low temperatures

    NASA Astrophysics Data System (ADS)

    Nath, Chandrani; Kumar, Ashok; Kuo, Yung-Kang; Okram, Gunadhor Singh

    2014-09-01

    Thermoelectric coolers with figure of merit (ZT) close to unity at low temperatures are the need of the hour with new advances in high temperature superconductors, superconducting microelectronic circuits, quantum computers, and photonics. Here, we demonstrate that the conducting polymer polyaniline (Pani) doped with camphor sulfonic acid synthesized in semi-crystalline nanostructures, possesses a giant Seebeck effect at low temperatures. The resulting enormously large Seebeck coefficient (up to 0.6 V/K) combined with an intrinsically low electrical conductivity and thermal conductivity give rise to a ZT = 0.77 at 45 K and ZT = 2.17 at 17 K.

  11. High thermoelectric figure of merit in nanocrystalline polyaniline at low temperatures

    SciTech Connect

    Nath, Chandrani; Kumar, Ashok E-mail: okram@csr.res.in; Kuo, Yung-Kang; Okram, Gunadhor Singh E-mail: okram@csr.res.in

    2014-09-29

    Thermoelectric coolers with figure of merit (ZT) close to unity at low temperatures are the need of the hour with new advances in high temperature superconductors, superconducting microelectronic circuits, quantum computers, and photonics. Here, we demonstrate that the conducting polymer polyaniline (Pani) doped with camphor sulfonic acid synthesized in semi-crystalline nanostructures, possesses a giant Seebeck effect at low temperatures. The resulting enormously large Seebeck coefficient (up to 0.6 V/K) combined with an intrinsically low electrical conductivity and thermal conductivity give rise to a ZT = 0.77 at 45 K and ZT = 2.17 at 17 K.

  12. Thermoelectric Properties of Complex Oxide Heterostructures

    NASA Astrophysics Data System (ADS)

    Cain, Tyler Andrew

    Thermoelectrics are a promising energy conversion technology for power generation and cooling systems. The thermal and electrical properties of the materials at the heart of thermoelectric devices dictate conversion efficiency and technological viability. Studying the fundamental properties of potentially new thermoelectric materials is of great importance for improving device performance and understanding the electronic structure of materials systems. In this dissertation, investigations on the thermoelectric properties of a prototypical complex oxide, SrTiO3, are discussed. Hybrid molecular beam epitaxy (MBE) is used to synthesize La-doped SrTiO3 thin films, which exhibit high electron mobilities and large Seebeck coefficients resulting in large thermoelectric power factors at low temperatures. Large interfacial electron densities have been observed in SrTiO3/RTiO 3 (R=Gd,Sm) heterostructures. The thermoelectric properties of such heterostructures are investigated, including the use of a modulation doping approach to control interfacial electron densities. Low-temperature Seebeck coefficients of extreme electron-density SrTiO3 quantum wells are shown to provide insight into their electronic structure.

  13. Thermoelectric Properties of Selenides Spinels

    NASA Technical Reports Server (NTRS)

    Snyder, G.; Caillat, T.; Fleurial, J-P.

    2000-01-01

    Many compounds with the spinel structure type have been analyzed for their thermoelectric properties. Published data was used to augment experimental results presented here to select promising thermoelectric spinels.

  14. Low temperature properties of holographic condensates

    NASA Astrophysics Data System (ADS)

    Basu, Pallab

    2011-03-01

    In the current work we study various models of holographic superconductors at low temperature. Generically the zero temperature limit of those models are solitonic solution with a zero sized horizon. Here we generalized simple version of those zero temperature solutions to small but non-zero temperature T. We confine ourselves to cases where near horizon geometry is AdS 4. At a non-zero temperature a small horizon would form deep inside this AdS 4 which does not disturb the UV physics. The resulting geometry may be matched with the zero temperature solution at an intermediate length scale. We understand this matching from separation of scales by setting up a perturbative expansion in gauge potential. We have a better analytic control in abelian case and quantities may be expressed in terms of hypergeometric function. From this we calculate low temperature behavior of various quatities like entropy, charge density and specific heat etc. We also calculate various energy gaps associated with p-wave holographic superconductor to understand the underlying pairing mechanism. The result deviates significantly from the corresponding weak coupling BCS counterpart.

  15. Bottom-up processing and low temperature transport properties of polycrystalline SnSe

    SciTech Connect

    Ge, Zhen-Hua; Wei, Kaya; Lewis, Hutton; Martin, Joshua; Nolas, George S.

    2015-05-15

    A hydrothermal approach was employed to efficiently synthesize SnSe nanorods. The nanorods were consolidated into polycrystalline SnSe by spark plasma sintering for low temperature electrical and thermal properties characterization. The low temperature transport properties indicate semiconducting behavior with a typical dielectric temperature dependence of the thermal conductivity. The transport properties are discussed in light of the recent interest in this material for thermoelectric applications. The nanorod growth mechanism is also discussed in detail. - Graphical abstract: SnSe nanorods were synthesized by a simple hydrothermal method through a bottom-up approach. Micron sized flower-like crystals changed to nanorods with increasing hydrothermal temperature. Low temperature transport properties of polycrystalline SnSe, after SPS densification, were reported for the first time. This bottom-up synthetic approach can be used to produce phase-pure dense polycrystalline materials for thermoelectrics applications. - Highlights: • SnSe nanorods were synthesized by a simple and efficient hydrothermal approach. • The role of temperature, time and NaOH content was investigated. • SPS densification allowed for low temperature transport properties measurements. • Transport measurements indicate semiconducting behavior.

  16. Optoelectronic and low temperature thermoelectric studies on nanostructured thin films of silver gallium selenide

    NASA Astrophysics Data System (ADS)

    Jacob, Rajani; Philip, Rachel Reena; Nazer, Sheeba; Abraham, Anitha; Nair, Sinitha B.; Pradeep, B.; Urmila, K. S.; Okram, G. S.

    2014-01-01

    Polycrystalline thin films of silver gallium selenide were deposited on ultrasonically cleaned soda lime glass substrates by multi-source vacuum co-evaporation technique. The structural analysis done by X-ray diffraction ascertained the formation of nano structured tetragonal chalcopyrite thin films. The compound formation was confirmed by X-ray photo-electron spectroscopy. Atomic force microscopic technique has been used for surface morphological analysis. Direct allowed band gap ˜1.78eV with high absorption coefficient ˜106/m was estimated from absorbance spectra. Low temperature thermoelectric effects has been investigated in the temperature range 80-330K which manifested an unusual increase in Seebeck coefficient with negligible phonon drag toward the very low and room temperature regime. The electrical resistivity of these n-type films was assessed to be ˜2.6Ωm and the films showed good photo response.

  17. Optoelectronic and low temperature thermoelectric studies on nanostructured thin films of silver gallium selenide

    SciTech Connect

    Jacob, Rajani Philip, Rachel Reena Nazer, Sheeba Abraham, Anitha Nair, Sinitha B.; Pradeep, B.; Urmila, K. S.; Okram, G. S.

    2014-01-28

    Polycrystalline thin films of silver gallium selenide were deposited on ultrasonically cleaned soda lime glass substrates by multi-source vacuum co-evaporation technique. The structural analysis done by X-ray diffraction ascertained the formation of nano structured tetragonal chalcopyrite thin films. The compound formation was confirmed by X-ray photo-electron spectroscopy. Atomic force microscopic technique has been used for surface morphological analysis. Direct allowed band gap ∼1.78eV with high absorption coefficient ∼10{sup 6}/m was estimated from absorbance spectra. Low temperature thermoelectric effects has been investigated in the temperature range 80–330K which manifested an unusual increase in Seebeck coefficient with negligible phonon drag toward the very low and room temperature regime. The electrical resistivity of these n-type films was assessed to be ∼2.6Ωm and the films showed good photo response.

  18. Thermoelectric Properties of Nanostructured CeAl3

    NASA Astrophysics Data System (ADS)

    Pokharel, Mani; Dahal, Tulashi; Ren, Zhifeng; Opeil, Cyril; Opeil Group Team; Ren Group Team

    2014-03-01

    Past investigations into the heavy fermion compound CeAl3 reveal a complex low-temperature physics resulting from the strong hybridization of localized 4f states with delocalized conduction electrons. This phenomenon gives rise to unusual electronic, thermal, and magnetic properties. We investigate the low-temperature thermoelectric properties of this strongly correlated system for its potential application as a p-type Peltier cooling element. In our work, nanostructured samples of CeAl3 have been prepared using dc hot-press method and evaluated for their thermoelectric properties. Effects of different hot-pressing temperatures on the nanostructure and the thermoelectric properties will be discussed. Our results on CeAl3 will be compared with our previous work on CeCu6. Funding for this work was provided by the DOD, USAF-OSR, MURI Program under Contract FA9550-10-1-0533.

  19. Low temperature transport properties of Ce-Al metallic glasses

    SciTech Connect

    Zeng, Q. S.; Rotundu, C. R.; Mao, W. L.; Dai, J. H.; Xiao, Y. M.; Chow, P.; Chen, X. J.; Qin, C. L.; Mao, H.-k.; Jiang, J. Z.

    2011-01-01

    The low temperature transport properties of Ce75- x Al25+ x (x = 0, 10, and 15 at. %) metallic glasses were investigated. Magnetic field and composition tuned magnetoresistances changing from negative to positive values were observed at low temperature. It was suggested that these peculiar phenomena were caused by the tunable competition between the Kondo effect and the Ruderman-Kittel-Kasuya-Yoshida interaction in Ce-Al metallic glass with the variation in Ce content and magnetic field. Further magnetization and Ce-2p3d resonant inelastic x-ray scattering spectroscopy measurements supported this scenario. These Ce-Al metallic glasses could provide an interesting model system for the investigation of 4f electron behaviors in complex condensed matter with tunable transport properties.

  20. Promising thermoelectric properties of phosphorenes.

    PubMed

    Sevik, Cem; Sevinçli, Hâldun

    2016-09-01

    Electronic, phononic, and thermoelectric transport properties of single layer black- and blue-phosphorene structures are investigated with first-principles based ballistic electron and phonon transport calculations employing hybrid functionals. The maximum values of room temperature thermoelectric figure of merit, ZT corresponding to armchair and zigzag directions of black-phosphorene, ∼0.5 and ∼0.25, are calculated as rather smaller than those obtained with first-principles based semiclassical Boltzmann transport theory calculations. On the other hand, the maximum value of room temperature ZT of blue-phosphorene is predicted to be substantially high and remarkable values as high as 2.5 are obtained for elevated temperatures. Besides the fact that these figures are obtained at the ballistic limit, our findings mark the strong possibility of high thermoelectric performance of blue-phosphorene in new generation thermoelectric applications.

  1. Promising thermoelectric properties of phosphorenes

    NASA Astrophysics Data System (ADS)

    Sevik, Cem; Sevinçli, Hâldun

    2016-09-01

    Electronic, phononic, and thermoelectric transport properties of single layer black- and blue-phosphorene structures are investigated with first-principles based ballistic electron and phonon transport calculations employing hybrid functionals. The maximum values of room temperature thermoelectric figure of merit, ZT corresponding to armchair and zigzag directions of black-phosphorene, ∼0.5 and ∼0.25, are calculated as rather smaller than those obtained with first-principles based semiclassical Boltzmann transport theory calculations. On the other hand, the maximum value of room temperature ZT of blue-phosphorene is predicted to be substantially high and remarkable values as high as 2.5 are obtained for elevated temperatures. Besides the fact that these figures are obtained at the ballistic limit, our findings mark the strong possibility of high thermoelectric performance of blue-phosphorene in new generation thermoelectric applications.

  2. Promising thermoelectric properties of phosphorenes.

    PubMed

    Sevik, Cem; Sevinçli, Hâldun

    2016-09-01

    Electronic, phononic, and thermoelectric transport properties of single layer black- and blue-phosphorene structures are investigated with first-principles based ballistic electron and phonon transport calculations employing hybrid functionals. The maximum values of room temperature thermoelectric figure of merit, ZT corresponding to armchair and zigzag directions of black-phosphorene, ∼0.5 and ∼0.25, are calculated as rather smaller than those obtained with first-principles based semiclassical Boltzmann transport theory calculations. On the other hand, the maximum value of room temperature ZT of blue-phosphorene is predicted to be substantially high and remarkable values as high as 2.5 are obtained for elevated temperatures. Besides the fact that these figures are obtained at the ballistic limit, our findings mark the strong possibility of high thermoelectric performance of blue-phosphorene in new generation thermoelectric applications. PMID:27455173

  3. Low-temperature thermal properties of a hyperaged geological glass

    NASA Astrophysics Data System (ADS)

    Pérez-Castañeda, Tomás; Jiménez Riobóo, Rafael J.; Ramos, Miguel A.

    2013-07-01

    We have measured the specific heat of amber from the Dominican Republic, an ancient geological glass about 20 million years old, in the low-temperature range 0.6 K ≤ T ≤ 26 K, in order to assess the effects of its natural stabilization (hyperageing) process on the low-temperature glassy properties, i.e. boson peak and two-level systems. We have also conducted modulated differential scanning calorimetry experiments to characterize the thermodynamic state of our samples. We found that calorimetric curves exhibit a huge ageing signal ΔH ≈ 5 J g-1 in the first upscan at the glass transition Tg = 389 K, that completely disappears after heating up (rejuvenating) the sample to T = 395 K for 3 h. To independently evaluate the phonon contribution to the specific heat, Brillouin spectroscopy was performed in the temperature range 80 K ≤ T ≤ 300 K. An expected increase in the Debye level was observed after rejuvenating the Dominican amber. However, no significant change was observed in the low-temperature specific heat of glassy amber after erasing its thermal history: both its boson peak (i.e., the maximum in the Cp/T3 representation) and the density of tunnelling two-level systems (i.e., the Cp ˜ T contribution at the lowest temperatures) remained essentially the same. Also, a consistent analysis using the soft-potential model of our Cp data and earlier thermal-conductivity data found in the literature further supports our main conclusion, namely, that these glassy ‘anomalous’ properties at low temperatures remain essentially invariant after strong relaxational processes such as hyperageing.

  4. Challenges in Characterizing Low-Temperature Regolith Properties

    NASA Technical Reports Server (NTRS)

    Swanger, Adam Michael; Mantovani, James G.

    2014-01-01

    The success or failure of in-situ resource utilization for planetary surface exploration--be it for scientific, colonization or commercialization purposes--relies heavily on the ability to design and implement systems which effectively process the associated regolith and exploit its benefits. In most cases this challenge necessarily includes the characterization of low-temperature (cryogenic) properties; as many celestial destinations of interest, such as the moon, Mars and asteroids, have little or no atmosphere to help sustain the consistently "high" surface temperatures seen on planets such as Earth, and therefore can experience permanent cryogenic temperatures or dramatic cyclical changes. Characterization of physical properties (such as specific heat, thermal and electrical conductivity, etc.) over the entire temperature profile is undoubtedly an important piece of the puzzle; however, the impact on mechanical properties due to the introduction of icy deposit must also be explored in order to devise effective and robust excavation technologies. Currently the Granular Mechanics and Regolith Operations Lab and the Cryogenics Test Lab at NASA Kennedy Space Center are developing technologies and experimental methods to address these challenges and aid in the characterization of physical and mechanical properties of regolith at cryogenic temperatures. This presentation will review the current state of knowledge concerning lunar regolith at low temperature including that of icy regolith.

  5. Low Temperature Carrier Transport Properties in Isotopically Controlled Germanium

    NASA Astrophysics Data System (ADS)

    Itoh, Kohei

    Investigations of electronic and optical properties of semiconductors often require specimens with extremely homogeneous dopant distributions and precisely controlled net-carrier concentrations and compensation ratios. The previous difficulties in fabricating such samples are overcome as reported in this thesis by growing high-purity Ge single crystals of controlled ^{74}Ge and ^{70}Ge isotopic compositions, and doping these crystals by the neutron transmutation doping (NTD) technique. The resulting net-impurity concentrations and the compensation ratios are precisely determined by the thermal neutron fluence and the (^{74 }Ge) / (^{70}Ge) ratios of the starting Ge materials, respectively. This method also guarantees unprecedented doping uniformity. Using such samples we have conducted four types of electron (hole) transport studies probing the nature of (1) free carrier scattering by neutral impurities, (2) free carrier scattering by ionized impurities, (3) low temperature hopping conduction, and (4) free carrier transport in samples close to the metal-insulator transition. We have also performed infrared absorption spectroscopy studies of compensated Ge samples, investigating the line broadening mechanism due to random electric fields arising from ionized impurity centers. In the study of neutral impurity scattering, we find excellent agreement between the low temperature experimental mobility and phase shift calculations for the hydrogen atom scaled to shallow impurities in semiconductors. In the ionized impurity scattering study, none of the theories we have tested so far explains our low temperature experimental mobilities in highly compensated Ge (K>0.3). We discuss possible problems associated with the theories, in particular, the treatment of the screening mechanism. In the study of low temperature hopping conduction, we show results of temperature dependent resistivity measurements as a function of both the net-carrier concentration and the compensation

  6. Shape memory polymers with high and low temperature resistant properties

    PubMed Central

    Xiao, Xinli; Kong, Deyan; Qiu, Xueying; Zhang, Wenbo; Liu, Yanju; Zhang, Shen; Zhang, Fenghua; Hu, Yang; Leng, Jinsong

    2015-01-01

    High temperature shape memory polymers that can withstand the harsh temperatures for durable applications are synthesized, and the aromatic polyimide chains with flexible linkages within the backbone act as reversible phase. High molecular weight (Mn) is demanded to form physical crosslinks as fixed phase of thermoplastic shape memory polyimide, and the relationship between Mn and glass transition temperature (Tg) is explored. Thermoset shape memory polyimide shows higher Tg and storage modulus, better shape fixity than thermoplastic counterpart due to the low-density covalent crosslinking, and the influence of crosslinking on physical properties are studied. The mechanism of high temperature shape memory effects based on chain flexibility, molecular weight and crosslink density is proposed. Exposure to thermal cycling from +150 °C to −150 °C for 200 h produces negligible effect on the properties of the shape memory polyimide, and the possible mechanism of high and low temperature resistant property is discussed. PMID:26382318

  7. Shape memory polymers with high and low temperature resistant properties.

    PubMed

    Xiao, Xinli; Kong, Deyan; Qiu, Xueying; Zhang, Wenbo; Liu, Yanju; Zhang, Shen; Zhang, Fenghua; Hu, Yang; Leng, Jinsong

    2015-01-01

    High temperature shape memory polymers that can withstand the harsh temperatures for durable applications are synthesized, and the aromatic polyimide chains with flexible linkages within the backbone act as reversible phase. High molecular weight (Mn) is demanded to form physical crosslinks as fixed phase of thermoplastic shape memory polyimide, and the relationship between Mn and glass transition temperature (Tg) is explored. Thermoset shape memory polyimide shows higher Tg and storage modulus, better shape fixity than thermoplastic counterpart due to the low-density covalent crosslinking, and the influence of crosslinking on physical properties are studied. The mechanism of high temperature shape memory effects based on chain flexibility, molecular weight and crosslink density is proposed. Exposure to thermal cycling from +150 °C to -150 °C for 200 h produces negligible effect on the properties of the shape memory polyimide, and the possible mechanism of high and low temperature resistant property is discussed.

  8. Linking membrane physical properties and low temperature tolerance in arthropods.

    PubMed

    Waagner, Dorthe; Bouvrais, Hélène; Ipsen, John H; Holmstrup, Martin

    2013-12-01

    Maintenance of membrane fluidity is of crucial importance in ectotherms experiencing thermal changes. This maintenance has in ectotherms most often been indicated using indirect measures of biochemical changes of phospholipid membranes, which is then assumed to modulate the physico-chemical properties of the membrane. Here, we measure bending rigidity characterizing the membrane flexibility of re-constituted membrane vesicles to provide a more direct link between membrane physical characteristics and low temperature tolerance. Bending rigidity of lipid bilayers was measured in vitro using Giant Unilamellar Vesicles formed from phospholipid extracts of the springtail, Folsomia candida. The bending rigidity of these membranes decreased when exposed to 0.4 vol% ethanol (0.23 mM/L). Springtails exposed to ethanol for 24h significantly increased their cold shock tolerance. Thus, by chemically inducing decreased membrane rigidity, we have shown a direct link between the physico-chemical properties of the membranes and the capacity to tolerate low temperature in a chill-susceptible arthropod. PMID:24080490

  9. Linking membrane physical properties and low temperature tolerance in arthropods.

    PubMed

    Waagner, Dorthe; Bouvrais, Hélène; Ipsen, John H; Holmstrup, Martin

    2013-12-01

    Maintenance of membrane fluidity is of crucial importance in ectotherms experiencing thermal changes. This maintenance has in ectotherms most often been indicated using indirect measures of biochemical changes of phospholipid membranes, which is then assumed to modulate the physico-chemical properties of the membrane. Here, we measure bending rigidity characterizing the membrane flexibility of re-constituted membrane vesicles to provide a more direct link between membrane physical characteristics and low temperature tolerance. Bending rigidity of lipid bilayers was measured in vitro using Giant Unilamellar Vesicles formed from phospholipid extracts of the springtail, Folsomia candida. The bending rigidity of these membranes decreased when exposed to 0.4 vol% ethanol (0.23 mM/L). Springtails exposed to ethanol for 24h significantly increased their cold shock tolerance. Thus, by chemically inducing decreased membrane rigidity, we have shown a direct link between the physico-chemical properties of the membranes and the capacity to tolerate low temperature in a chill-susceptible arthropod.

  10. Low Temperature Crystal Structure and Magnetic Properties of RAl2

    SciTech Connect

    Pathak, Arjun K.; Paudyal, Durga; Gschneidner, Karl A.; Pecharsky, Vitalij K.

    2014-01-08

    Low temperature crystal structure and magnetic properties of RAl2 (R = Pr and Nd) have been studied using temperature dependent powder x-ray diffraction, magnetization, and heat capacity measurements. Unlike PrAl2, NdAl2 retains cubic MgCu2-type structure from room temperature down to 5 K, which is also confirmed from first principles electronic structure calculations. The magnetization measurements show both PrAl2 and NdAl2 order ferromagnetically at TC = 32 K and 77 K, respectively. However, the magnetization measurements show the former is a hard ferromagnet compared to the latter which is a soft ferromagnetic material. The magnetic entropy change obtained from heat capacity measurements at ΔH = 30 kOe for PrAl2 and NdAl2 are 3.15 J mol-1 K-1 and 1.18 J mol-1 K-1, respectively.

  11. Low temperature carrier transport properties in isotopically controlled germanium

    SciTech Connect

    Itoh, K.

    1994-12-01

    Investigations of electronic and optical properties of semiconductors often require specimens with extremely homogeneous dopant distributions and precisely controlled net-carrier concentrations and compensation ratios. The previous difficulties in fabricating such samples are overcome as reported in this thesis by growing high-purity Ge single crystals of controlled {sup 75}Ge and {sup 70}Ge isotopic compositions, and doping these crystals by the neutron transmutation doping (NTD) technique. The resulting net-impurity concentrations and the compensation ratios are precisely determined by the thermal neutron fluence and the [{sup 74}Ge]/[{sup 70}Ge] ratios of the starting Ge materials, respectively. This method also guarantees unprecedented doping uniformity. Using such samples the authors have conducted four types of electron (hole) transport studies probing the nature of (1) free carrier scattering by neutral impurities, (2) free carrier scattering by ionized impurities, (3) low temperature hopping conduction, and (4) free carrier transport in samples close to the metal-insulator transition.

  12. Low-Temperature Seebeck Coefficients for Polaron-Driven Thermoelectric Effect in Organic Polymers.

    PubMed

    de Oliveira Neto, Pedro Henrique; da Silva Filho, Demétrio A; Roncaratti, Luiz F; Acioli, Paulo H; E Silva, Geraldo Magela

    2016-07-14

    We report the results of electronic structure coupled to molecular dynamics simulations on organic polymers subject to a temperature gradient at low-temperature regimes. The temperature gradient is introduced using a Langevin-type dynamics corrected for quantum effects, which are very important in these systems. Under this condition we were able to determine that in these no-impurity systems the Seebeck coefficient is in the range of 1-3 μV/K. These results are in good agreement with reported experimental results under the same low-temperature conditions.

  13. Low-temperature elastic and electronic properties of MAX phases

    NASA Astrophysics Data System (ADS)

    Finkel, Peter

    The Mn+1AXn phases (where M is an early transition metal, A is an A-group element and, X is C and/or N and n = 1 to 3) represent a new class of carbides and nitrides and can be best described as polycrystalline nanolaminates. They combine some of the best properties of ceramics and metals. Their physical properties (stiffness, damage and thermal shock resistance, high thermal and electrical conductivity) along with the fact they are readily machinable, make them extremely attractive in terms of the potential technological applications. Knowledge of low-temperature behavior is vital because it can provide insight into Mn+1AXn-phases' physical properties. This work entails the systematic study of the elastic, electrical, galvanomagnetic and thermal properties of these materials in the 4--300 K temperature range. The elastic constants of these compounds (Ti3SiC2, Ti3AlC2 and Ti4AlN3) were measured over the 20--300 K temperature range. Their Young's and shear modulii determined from ultrasonic velocities were in 300--335 and 124--140 GPa range, respectively; both moduli increase slowly with decreasing temperature and reaching a maximum at temperatures below 125 K; Poisson's ratio is 0.2. The Debye temperatures, thetaD, of these compounds calculated from the mean ultrasonic velocity are in 650--780K range which is in agreement with data obtained from low-temperature heat capacity measurements. To characterize the electronic transport properties, the resistivity, magnetoresistance, Hall effect, Seebeck coefficient and magnetic susceptibility were measured in the 4--300K range, and in magnetic fields up to 9T. All MAX-phases exhibit metal-like temperature dependence of the resistivity rho(T). theta D for most of the MAX-phases determined by fitting rho(T) with the Bloch T5 formula were in good agreement with the values determined from elastic and calorimetric measurements. The carrier density of electrons n (or holes, p) and their mobilities were calculated utilizing a

  14. Investigating Low Temperature Properties of Rubber Seals - 13020

    SciTech Connect

    Jaunich, M.; Wolff, D.; Stark, W.

    2013-07-01

    To achieve the required tightness levels of containers for low and intermediate level radioactive wastes rubbers are widely applied as main sealing materials. The save encapsulation of the radioactive container contents has to be guaranteed according to legislation and appropriate guidelines for long storage periods as well as down to temperatures of -40 deg. C during transportation. Therefore the understanding of failure mechanisms that lead to leakage at low temperatures is of high importance. It is known that the material properties of rubbers are strongly influenced by temperature. At low temperatures this is caused by the rubber-glass transition (abbr. glass transition). During continuous cooling the material changes from rubber-like entropy-elastic to stiff energy-elastic behaviour, that allows nearly no strain or retraction. Therefore, rubbers are normally used above their glass transition but the minimum working temperature limit is not defined precisely, what can cause problems during application. The temperature range where full functionality is possible is strongly dependent on the application conditions and the material. For this investigation mainly ethylene propylene diene (EPDM) and fluorocarbon rubbers (FKM) were selected as they are often used for radioactive waste containers. Differential Scanning Calorimetry (DSC) and Dynamic Mechanical Analysis (DMA) are typically used for the determination of the temperature range of the glass transition process. The standardized compression set measurement according to ISO 815 is common for investigation of rubber sealing materials as the test simulates the seal behaviour after release. To reduce the test time of the standard tests a faster technique giving the same information was developed. Additionally, the breakdown temperature of the sealing function of complete O-ring seals is measured in a component test setup to compare it with the results of the other tests. The experimental setup is capable of

  15. Thermoelectric Properties of Complex Zintl Phases

    NASA Astrophysics Data System (ADS)

    Snyder, G. Jeffrey

    2008-03-01

    Complex Zintl phases make ideal thermoelectric materials because they can exhibit the necessary ``electron-crystal, phonon-glass'' properties required for high thermoelectric efficiency. Complex crystal structures can lead to high thermoelectric figure of merit (zT) by having extraordinarily low lattice thermal conductivity. A recent example is the discovery that Yb14MnSb11, a complex Zintl compound, has twice the zT as the SiGe based material currently in use at NASA. The high temperature (300K - 1300K) electronic properties of Yb14MnSb11 can be understood using models for heavily doped semiconductors. The free hole concentration, confirmed by Hall effect measurements, is set by the electron counting rules of Zintl and the valence of the transition metal (Mn^+2). Substitution of nonmagnetic Zn^+2 for the magnetic Mn^+2 reduces the spin-disorder scattering and leads to increased zT (10%). The reduction of spin-disorder scattering is consistent with the picture of Yb14MnSb11 as an underscreened Kondo lattice as derived from low temperature measurements. The hole concentration can be reduced by the substitution of Al^+3 for Mn^+2, which leads to an increase in the Seebeck coefficient and electrical resistivity consistent with models for degenerate semiconductors. This leads to further improvements (about 25%) in zT and a reduction in the temperature where the zT peaks. The peak in zT is due to the onset of minority carrier conduction and can be correlated with reduction in Seebeck coefficient, increase in electrical conductivity and increase in thermal conductivity due to bipolar thermal conduction.

  16. Ulta-Low Temperature Properties of Amorphous and Glassy Materials

    SciTech Connect

    Douglas D. Osheroff

    2013-01-10

    During the grant period we made detailed studies of the dynamics of two level tunneling systems in glasses at very low temperature and by the application of AC and DC electric fields. Models have been developed that now account for both the formation and subsequent breaking of resonant tunneling pairs, and strongly bound pairs in a swept electric field. Perhaps most importantly, we saw a critical field in the polymeric glass Mylar, beyond which recovery following the application of a strong electric field is substantially modified from the predictions of current models. It was essential during the final grant period to see how general these new properties were by testing for them in a new and broader set of glasses. At the same time, the discovery that tunneling systems with nuclei possessing electric quadrupole moments that couple the TS behavior to magnetic fields was studied in this laboratory, using some of the probes that we alone employ. Finally, we were developing our own dielectric pulsed echo system, operating for the first time at the low energy splittings and hence temperatures at which interactions between TS are important. We combined this technique with the sudden application of both electric and strain fields to better understand the dynamics of the response of TS in glasses on a much shorter time scale than is possible with our established probes.

  17. Low temperature property of Metaphosphatecopper(II/I) salt

    NASA Astrophysics Data System (ADS)

    Swain, Trilochan; Brahma, Gouri Sankhar

    2016-04-01

    An inorganically template metaphosphoric acid containing copper salt, nanomaterial, has been synthesized and characterized with different measurement techniques such as Differential Scanning Calorimeter (DSC), UV-Vis-NIR, HRTEM, VSM, PPMS and X-RD. The thermal property of this salt has been studied at a low temperature up to 223 K from 298 K with DSC. The specific heat capacity of this complex has been measured in atmospheric O2 at a rate of 10 K min-1 from 298 K to 223 K and vice versa in two thermal cycles. The net specific heat capacity of this salt is found -88.28 J/gm.K and - 86.56 J/gm.K in first and second thermal cycles, respectively. There is a discontinuity in the specific heat at 106 s while measuring the specific heat capacity of the above nanomaterial at constant temperature 283 K. This particle size of this nanomaterial is ˜ 10 nm. The paramagnetic Curie temperature (θP) and Curie constant (C) are 18.29 K and 1.35x10-3 respectively. This material founds insulator from PPMS and UV-Vis-NIR measurements. So, it can be used as thermal interface material as a composite component with some organic polymers such as paraffin wax, ethylene-vinyl acetate etc.

  18. Solvent-Based Synthesis of Nano-Bi0.85Sb0.15 for Low-Temperature Thermoelectric Applications

    NASA Astrophysics Data System (ADS)

    Kaspar, K.; Fritsch, K.; Habicht, K.; Willenberg, B.; Hillebrecht, H.

    2016-09-01

    In this study we show a preparation method for nanostructured Bi0.85Sb0.15 powders via a chemical reduction route in a polyol medium, yielding material with particle sizes of 20-150 nm in scalable amounts. The powders were consolidated by spark plasma sintering (SPS) in order to maintain the nanostructure. To investigate influence of the sinter process, the powders were characterized by x-ray diffraction (XRD), energy dispersive x-ray spectroscopy (EDX), and scanning electron microscopy (SEM) measurements before and after SPS. Transport properties, Seebeck effect, and thermal conductivity were determined in the low temperature range below 300 K. The samples showed excellent thermal conductivity of 2.3-2.6 W/m × K at 300 K and Seebeck coefficients from -97 μV/K to -107 μV/K at 300 K with a maximum of -141 μV/K at 110 K, thus leading to ZT values of up to 0.31 at room temperature. The results show that Bi-Sb-alloys are promising materials for low-temperature applications. Our wet chemical approach gives access to scalable amounts of nano-material with increased homogeneity and good thermoelectric properties after SPS.

  19. Low temperature properties of some Er-rich intermetallic compounds

    SciTech Connect

    K.A. Gshneidner,jr; A.O. Pecharsky; L.Hale; V.K. Pecharsky

    2004-09-30

    The low temperature volumetric heat capacity ({approx}3.5 to 350 K) and magnetic susceptibility ({approx}4 to 320 K) of Er{sub 3}Rh, Er{sub 3}Ir, Er{sub 3}Pt, Er{sub 2}Al, and Er{sub 2}Sn have been measured. All of the compounds order antiferromagnetically (or ferrimagnetically), and most exhibit more than one magnetic ordering transition. The volumetric heat capacities in general are smaller than those of the prototype magnetic regenerator materials, except for Er{sub 3}Ir in the 12 to 14 K temperature range.

  20. Thermal Properties of Double-Aluminized Kapton at Low Temperatures

    NASA Astrophysics Data System (ADS)

    Tuttle, J.; DiPirro, M.; Canavan, E.; Hait, T.

    2008-03-01

    Double-aluminized kapton (DAK) is commonly used in multi-layer insulation blankets in cryogenic systems. NASA plans to use individual DAK sheets in lightweight deployable shields for satellites carrying instruments. A set of these shields will reflect away thermal radiation from the sun, the earth, and the instrument's warm side and allow the instrument's cold side to radiate its own heat to deep space. In order to optimally design such a shield system, it is important to understand the thermal characteristics of DAK down to low temperatures. We describe experiments which measured the thermal conductivity and electrical resistivity down to 4 Kelvin and the emissivity down to 10 Kelvin.

  1. Thermal Properties of Double-Aluminized Kapton at Low Temperatures

    NASA Technical Reports Server (NTRS)

    Tuttle, J.; DiPirro, M.; Canavan, E.; Hait, T.

    2007-01-01

    Double-aluminized kapton (DAK) is commonly used in multi-layer insulation blankets in cryogenic systems. NASA plans to use individual DAK sheets in lightweight deployable shields for satellites carrying instruments. A set of these shields will reflect away thermal radiation from the sun, the earth, and the instrument's warm side and allow the instrument's cold side to radiate its own heat to deep space. In order to optimally design such a shield system, it is important to understand the thermal characteristics of DAK down to low temperatures. We describe experiments which measured the thermal conductivity and electrical resistivity down to 4 Kelvin and the emissivity down to 10 Kelvin.

  2. Low-Temperature Transport Properties of Bi-Substituted β-As2Te3 Compounds

    NASA Astrophysics Data System (ADS)

    Vaney, J.-B.; Carreaud, J.; Delaizir, G.; Morin, C.; Monnier, J.; Alleno, E.; Piarristeguy, A.; Pradel, A.; Gonçalves, A. P.; Lopes, E. B.; Candolfi, C.; Dauscher, A.; Lenoir, B.

    2016-03-01

    β-As2Te3 belongs to the family of Bi2Te3-based alloys, a well-known class of efficient thermoelectric materials around room temperature. As2Te3 exists in two allotropic configurations: α- and β-As2Te3, of which only the latter crystallizes in the same rhombohedral structure as Bi2Te3. Herein, we report on substitution of Bi for As in the As2- x Bi x Te3 system with x = 0.0, 0.015, 0.025, and 0.035. These samples have been characterized by x-ray diffraction and scanning electron microscopy. The transport properties have been measured at low temperatures (5 K to 300 K) in both directions, parallel and perpendicular to the pressing direction. The results are compared with those obtained in previous study on samples substituted by Sn. Compared with Sn, Bi allows for a clear decrease in electrical resistivity while maintaining the thermal conductivity below 1 W/(m K) over the whole temperature range. As a result, a comparable peak ZT value near 0.2 was obtained at room temperature.

  3. Low temperature properties of pnictide CrAs single crystal

    NASA Astrophysics Data System (ADS)

    Wu, Wei; Zhang, Xiaodong; Yin, Zhihua; Zheng, Ping; Wang, Nanlin; Luo, Jianlin

    2010-07-01

    High quality single crystal CrAs was grown by Sn flux method. The results of magnetic susceptibility and electrical resistivity are reported in a temperature range of 2 to 800 K. At low temperatures, a T 2 dependence of resistivity is observed showing a Fermi-liquid behavior. The Kadowaki-Woods ratio is found to be 1×10-5 μΩ cm mol2 K2 mJ-2, which fits well to the universal value for many correlated electron systems. At about 270 K, a clear magnetic transition is observed with sharp changes of resistivity and susceptibility. Above 270 K, a linear-temperature dependence of the magnetic susceptibility is observed up to 700 K, which resembles the T-dependent magnetic susceptibility of parents of iron-pnictides superconductors.

  4. Thermoelectric properties of boron carbides

    SciTech Connect

    Aselage, T.; Emin, D.; Wood, C.

    1988-01-01

    Boron carbides are ceramic materials with unusual properties and applications. These refractory materials (T/sub m/ > 2600K) exist as a single phase over a wide range of stoichiometries, from 20 a/o carbon to less than 10 a/o carbon (Bouchacourt and Thevenot 1981). The relatively low density (approx.2.5 g/cm/sup 3/) and exceptional hardness lead to applications in the area of ceramic armor. In addition, /sup 10/B has a large capture cross section for thermal neutrons. This fact, along with the robust nature of the structure in a high radiation environment, leads to the use of boron carbides as nuclear reactor control materials. Because of a combination of unusual high temperature electronic and thermal properties, boron carbides also make efficient very high temperature (p-type) thermoelectrics. In this paper, we shall review the electrical and thermal properties of boron carbides and describe recent progress in understanding these properties. 13 refs., 4 figs.

  5. Low-temperature mechanical properties of glass/epoxy laminates

    NASA Astrophysics Data System (ADS)

    Reed, R. P.; Madhukar, M.; Thaicharoenporn, B.; Martovetsky, N. N.

    2014-01-01

    Selected mechanical properties of glass/epoxy laminate candidates for use in the electrical turn and ground insulation of the ITER Central solenoid (CS) modules were measured. Short-beam shear and flexural tests have been conducted on various E-glass cloth weaves/epoxy laminates at 295 and 77 K. Types of glass weave include 1581, 7500, 7781, and 38050, which represent both satin and plain weaves. The epoxy, planned for use for vacuum-pressure impregnation of the CS module, consists of an anhydride-cured bisphenol F resin system. Inter-laminar shear strength, flexural elastic modulus, and flexural strength have been measured. The data indicate that these properties are dependent on the volume percent of glass. Short-beam shear strength was measured as a function of the span-to-thickness ratio for all laminates at 77 K. Comprehensive fractography was conducted to obtain the failure mode of each short-beam shear test sample.

  6. Low-temperature mechanical properties of glass/epoxy laminates

    SciTech Connect

    Reed, R. P.; Madhukar, M.; Thaicharoenporn, B.; Martovetsky, N. N.

    2014-01-27

    Selected mechanical properties of glass/epoxy laminate candidates for use in the electrical turn and ground insulation of the ITER Central solenoid (CS) modules were measured. Short-beam shear and flexural tests have been conducted on various E-glass cloth weaves/epoxy laminates at 295 and 77 K. Types of glass weave include 1581, 7500, 7781, and 38050, which represent both satin and plain weaves. The epoxy, planned for use for vacuum-pressure impregnation of the CS module, consists of an anhydride-cured bisphenol F resin system. Inter-laminar shear strength, flexural elastic modulus, and flexural strength have been measured. The data indicate that these properties are dependent on the volume percent of glass. Short-beam shear strength was measured as a function of the span-to-thickness ratio for all laminates at 77 K. Comprehensive fractography was conducted to obtain the failure mode of each short-beam shear test sample.

  7. Influence of Anaerobiosis and Low Temperature on Bacillus cereus Growth, Metabolism, and Membrane Properties

    PubMed Central

    Clavel, Thierry; Clerté, Caroline; Carlin, Frédéric; Giniès, Christian; Nguyen-The, Christophe

    2012-01-01

    The impact of simultaneous anaerobiosis and low temperature on growth parameters, metabolism, and membrane properties of Bacillus cereus ATCC 14579 was studied. No growth was observed under anaerobiosis at 12°C. In bioreactors, growth rates and biomass production were drastically reduced by simultaneous anaerobiosis and low temperature (15°C). The two conditions had a synergistic effect on biomass reduction. In anaerobic cultures, fermentative metabolism was modified by low temperature, with a marked reduction in ethanol production leading to a lower ability to produce NAD+. Anaerobiosis reduced unsaturated fatty acids at both low optimal temperatures. In addition, simultaneous anaerobiosis and low temperatures markedly reduced levels of branched-chain fatty acids compared to all other conditions (accounting for 33% of total fatty acids against more 71% for low-temperature aerobiosis, optimal-temperature aerobiosis, and optimal-temperature anaerobiosis). This corresponded to high-melting-temperature lipids and to low-fluidity membranes, as indicated by differential scanning calorimetry, 1,6-diphenyl-1,3,5-hexatriene (DPH) fluorescence anisotropy, and infrared spectroscopy. This is in contrast to requirements for cold adaptation. A link between modification in the synthesis of metabolites of fermentative metabolism and the reduction of branched-chain fatty acids at low temperature under anaerobiosis, through a modification of the oxidizing capacity, is assumed. This link may partly explain the impact of low temperature and anaerobiosis on membrane properties and growth performance. PMID:22247126

  8. Thermoelectric properties of a trilayer graphene nanoribbon

    NASA Astrophysics Data System (ADS)

    Orellana, Pedro; Cortes, Natalia; Rosales, Luis; Pacheco, Monica; Chico, Leonor

    2015-03-01

    In this work the electronic and thermoelectric properties of a three-layer graphene with AAA stacking type are studied. By using a tight-binding model analytical expressions for the transmission and density of states are obtained. Thermoelectric properties are analyzed by numerical integration and results for thermopower and figure of merit, electronic conductance and thermal conductance are obtained. The results show that the interference effects present in this system, like Fano effect, directly affect the behavior of these thermoelectric properties and as well as the Wiedemann-Franz law. There is an enhancement of the thermopower of the system and a violation of the Wiedemann-Franz law in the region of energies close the Fano antiresonances and this has as a consequence an enhancement of the figure of merit of the system. FONDECYT 1140571, 1140388, CONICYT ACT 1204, DGIP/ USM internal Grant 11.14.68.

  9. Top loading cryogen-free apparatus for low temperature thermophysical properties measurement

    NASA Astrophysics Data System (ADS)

    Liu, Huiming; Gong, Linghui; Xu, Dong; Huang, Chuanjun; Zhang, Meimei; Xu, Peng; Li, Laifeng

    2014-07-01

    The thermophysical properties of matter, especially properties at low temperature, are extremely important for engineering and materials science. Traditional liquid helium based cryostats are in many cases no longer affordable to operate due to the high liquid helium cost. This paper describes the design and test results of a cryogen-free cryostat, based on a GM cryocooler, with 50 mm diameter top loading sample facilities for thermophysical properties measurement at low temperature. The sample temperature range is tuned between 2.6 K and 300 K and it can be continuously controlled with a high resolution. Moreover, the modular sample holder can be adapted to multiple properties measurement.

  10. Lattice dynamics and thermoelectric properties of nanocrystalline silicon-germanium alloys

    SciTech Connect

    Claudio, Tania; Stein, Niklas; Peterman, Nils; Stroppa, Daniel; Koza, Michael M.; Wiggers, Hartmut; Klobes, B.; Schierning, Gabi; Hermann, Raphael P.

    2015-10-26

    The lattice dynamics and thermoelectric properties of sintered phosphorus-doped nanostructured silicon- germanium alloys obtained by gas-phase synthesis were studied. Measurements of the density of phonon states by inelastic neutron scattering were combined with measurements of the elastic constants and the low- temperature heat capacity. A strong influence of nanostructuring and alloying on the lattice dynamics was observed. The thermoelectric transport properties of samples with different doping as well as samples sintered at different temperature were characterized between room temperature and 1000C. A peak figure of merit zT = 0:88 at 900C is observed and comparatively insensitive to the aforementioned param- eter variations.

  11. Thermoelectric properties of inverse opals

    NASA Astrophysics Data System (ADS)

    Mahan, G. D.; Poilvert, N.; Crespi, V. H.

    2016-02-01

    Rayleigh's method [Philos. Mag. Ser. 5 34, 481 (1892)] is used to solve for the classical thermoelectric equations in inverse opals. His theory predicts that in an inverse opal, with periodic holes, the Seebeck coefficient and the figure of merit are identical to that of the bulk material. We also provide a major revision to Rayleigh's method, in using the electrochemical potential as an important variable, instead of the electrostatic potential. We also show that in some cases, the thermal boundary resistance is important in the effective thermal conductivity.

  12. Thermoelectric Properties of Yb_14MnSb_11

    NASA Astrophysics Data System (ADS)

    Carr, C. W.; Klavins, P.; Shelton, R. N.; Kauzlarich, S. M.; Snyder, G. J.

    2000-03-01

    A class of compounds with the general formula R_14MnPn_11 (where R=Eu, Yb, Ca, Sr, Ba and Pn=P, As, Sb, Bi) have been studied for their interesting structural and magnetic properties.(Kauzlarich, S.M., Chemistry, Structure, and Bonding of Zintl Phases and Ions, (VCH Publishers, New York, 1996).) The compounds range from semiconducting to metallic across the series and exhibit colossal magnetoresistive properties at low temperatures. Preliminary measurements of one of these compounds, Yb_14MnSb_11, indicate that it may have potential as a new thermoelectric material. Recently it has been shown that atomic displacement parameters can be used to calculate the thermal conductivity of materials and that this method may prove useful in identifying new thermoelectric materials.(Sales, B.C., et al., J. Solid State Chem., vol. 146 (1999).) We utilize this method to estimate the thermal properties for the Zintl compound Yb_14MnSb_11. The estimated values will be compared with values measured by the 3-omega method.

  13. Thermoelectric Properties of Non-Metallic Topological Insulator Bi2 Te 3 at High Magnetic Fields

    NASA Astrophysics Data System (ADS)

    Qu, Dong-Xia; Hor, Yew San; Cava, Robert J.; Ong, N. Phuan; Princeton University Team

    2011-03-01

    Three-dimensional topological insulators are a new class of electronic systems characterized by a bulk insulating state and conducting surface states with Dirac-like energy-momentum dispersion [1, 2]. One of the interesting aspects of this material is how the surface states affect thermoelectric properties of the whole electronic system, given that the bismuth based topological insulators are also excellent thermoelectric materials. We studied the low-temperature thermoelectric transport properties of high-mobility bulk topological insulator Bi 2 Te 3 at high magnetic fields up to 35 T. We found remarkably large quantum oscillations in the thermopower of the surface states over a field range of 14 to 35 T. The existence of a non-zero Berry's phase in surface electrons is confirmed from the magneto-oscillations of both thermopower and magnetoresistance. Supported by NSF-MRSEC under Grant DMR 08-19860.

  14. Ferrous sulfate based low temperature synthesis and magnetic properties of nickel ferrite nanostructures

    SciTech Connect

    Tejabhiram, Y.; Pradeep, R.; Helen, A.T.; Gopalakrishnan, C.; Ramasamy, C.

    2014-12-15

    Highlights: • Novel low temperature synthesis of nickel ferrite nanoparticles. • Comparison with two conventional synthesis techniques including hydrothermal method. • XRD results confirm the formation of crystalline nickel ferrites at 110 °C. • Superparamagnetic particles with applications in drug delivery and hyperthermia. • Magnetic properties superior to conventional methods found in new process. - Abstract: We report a simple, low temperature and surfactant free co-precipitation method for the preparation of nickel ferrite nanostructures using ferrous sulfate as the iron precursor. The products obtained from this method were compared for their physical properties with nickel ferrites produced through conventional co-precipitation and hydrothermal methods which used ferric nitrate as the iron precursor. X-ray diffraction analysis confirmed the synthesis of single phase inverse spinel nanocrystalline nickel ferrites at temperature as low as 110 °C in the low temperature method. Electron microscopy analysis on the samples revealed the formation of nearly spherical nanostructures in the size range of 20–30 nm which are comparable to other conventional methods. Vibrating sample magnetometer measurements showed the formation of superparamagnetic particles with high magnetic saturation 41.3 emu/g which corresponds well with conventional synthesis methods. The spontaneous synthesis of the nickel ferrite nanoparticles by the low temperature synthesis method was attributed to the presence of 0.808 kJ mol{sup −1} of excess Gibbs free energy due to ferrous sulfate precursor.

  15. Low-Temperature Bonding of Bi0.5Sb1.5Te3 Thermoelectric Material with Cu Electrodes Using a Thin-Film In Interlayer

    NASA Astrophysics Data System (ADS)

    Lin, Yan-Cheng; Yang, Chung-Lin; Huang, Jing-Yi; Jain, Chao-Chi; Hwang, Jen-Dong; Chu, Hsu-Shen; Chen, Sheng-Chi; Chuang, Tung-Han

    2016-09-01

    A Bi0.5Sb1.5Te3 thermoelectric material electroplated with a Ni barrier layer and a Ag reaction layer was bonded with a Ag-coated Cu electrode at low temperatures of 448 K (175 °C) to 523 K (250 °C) using a 4- μm-thick In interlayer under an external pressure of 3 MPa. During the bonding process, the In thin film reacted with the Ag layer to form a double layer of Ag3In and Ag2In intermetallic compounds. No reaction occurred at the Bi0.5Sb1.5Te3/Ni interface, which resulted in low bonding strengths of about 3.2 MPa. The adhesion of the Bi0.5Sb1.5Te3/Ni interface was improved by precoating a 1- μm Sn film on the surface of the thermoelectric element and preheating it at 523 K (250 °C) for 3 minutes. In this case, the bonding strengths increased to a range of 9.1 to 11.5 MPa after bonding at 473 K (200 °C) for 5 to 60 minutes, and the shear-tested specimens fractured with cleavage characteristics in the interior of the thermoelectric material. The bonding at 448 K (175 °C) led to shear strengths ranging from 7.1 to 8.5 MPa for various bonding times between 5 and 60 minutes, which were further increased to the values of 10.4 to 11.7 MPa by increasing the bonding pressure to 9.8 MPa. The shear strengths of Bi0.5Sb1.5Te3/Cu joints bonded with the optimized conditions of the modified solid-liquid interdiffusion bonding process changed only slightly after long-term exposure at 473 K (200 °C) for 1000 hours.

  16. The influence of the nanostructure geometry on the thermoelectric properties

    NASA Astrophysics Data System (ADS)

    AL-Badry, Lafy F.

    2016-09-01

    We discuss the influence of nanostructure geometry on the thermoelectric properties in quantum ring consists of one QD in each arm, each QD connects with side QD. The calculations are based on the time-dependent Hamiltonian model, the steady state is considered to obtain an analytical expression for the transmission probability as a function of system energies. We employed the transmission probability to calculate the thermoelectric properties. We investigate thermoelectric properties through three configurations of this nanostructure. Figure of merit enhanced in configuration (II) when side QD connected to upper arm of quantum ring. The magnetic flux threads quantum ring. The effect of magnetic flux on the thermoelectric properties is examined.

  17. Effects of Large Nuclear Quadrupoles on Dielectric Properties of Glasses at Very Low Temperatures

    NASA Astrophysics Data System (ADS)

    Luck, A.; Fleischmann, A.; Reiser, A.; Enss, C.

    2014-12-01

    The universal behaviour of amorphous solids at low temperatures, governed by atomic tunneling systems as described by the standard tunneling model, has long been a generally accepted fact. In the last years, however, measurements of dielectric two-pulse polarization echoes have revealed that nuclear quadrupole moments involved in atomic tunneling systems can cause specific material-dependent effects in magnetic fields. We have performed measurements of the dielectric properties of the two multicomponent glasses N-KZFS11 and HY-1, containing several percent of tantalum oxide and holmium oxide respectively. As 181Ta and 165Ho both carry very large nuclear quadrupole moments, these glasses are ideal candidates to study the influence of nuclear quadrupole moments on the properties of glasses at very low temperatures. Our measurements not only show unique dielectric behaviour in both glasses, but also differ significantly from various predictions of the standard tunneling model.

  18. Effect of metal doping on the low-temperature structural behavior of thermoelectric {beta}-Zn{sub 4}Sb{sub 3}

    SciTech Connect

    Nylen, Johanna; Lidin, Sven; Andersson, Magnus; Liu Hongxue; Newman, Nate; Haeussermann, Ulrich

    2007-09-15

    The low-temperature structural phase transitions of Bi, Pb, In and Sn-doped samples of thermoelectric Zn{sub 4}Sb{sub 3} have been characterized on crystals grown from molten metal fluxes, using electrical resistance and single crystal X-ray diffraction measurements. Room temperature stable, disordered, {beta}-Zn{sub 4}Sb{sub 3} undergoes two phase transitions at 254 and 235 K to the consecutively higher ordered phases {alpha} and {alpha}', respectively. The ideal crystallographic composition of {alpha}-Zn{sub 4}Sb{sub 3} is Zn{sub 13}Sb{sub 10}. The {alpha}-{alpha}' transformation is triggered by a slight and homogenous Zn deficiency with respect to this composition and introduces a compositional modulation in the {alpha}-Zn{sub 4}Sb{sub 3} structure. When preparing {beta}-Zn{sub 4}Sb{sub 3} in the presence of metals with low melting points (Bi, Sn, In, Pb) the additional metal atoms are unavoidably incorporated in small concentrations (0.04-1.3 at%) and act as dopants. This incorporation alters the subtle balance between Zn disorder and Zn deficiency in Zn{sub 4}Sb{sub 3} and has dramatic consequences for its low-temperature structural behavior. From molten metal flux synthesis it is possible to obtain (doped) Zn{sub 4}Sb{sub 3} samples which (1) only display a {beta}-{alpha} transition, (2) only display a {beta}-{alpha}' transition, or (3) do not display any low-temperature phase transition at all. Case (2) provided diffraction data with a sufficient quality to obtain a structural model for highly complex, compositionally modulated, {alpha}'-Zn{sub 4}Sb{sub 3}. The crystallographic composition of this phase is Zn{sub 84}Sb{sub 65}. - Graphical abstract: The thermoelectric material Zn{sub 4}Sb{sub 3} displays complex temperature polymorphism. Room temperature stable, disordered, {beta}-Zn{sub 4}Sb{sub 3} undergoes two phase transitions at 254 and 235 K to the consecutively higher ordered phases {alpha} and {alpha}', respectively. The {alpha

  19. Thermal and thermoelectric properties of graphene.

    PubMed

    Xu, Yong; Li, Zuanyi; Duan, Wenhui

    2014-06-12

    The subject of thermal transport at the mesoscopic scale and in low-dimensional systems is interesting for both fundamental research and practical applications. As the first example of truly two-dimensional materials, graphene has exceptionally high thermal conductivity, and thus provides an ideal platform for the research. Here we review recent studies on thermal and thermoelectric properties of graphene, with an emphasis on experimental progresses. A general physical picture based on the Landauer transport formalism is introduced to understand underlying mechanisms. We show that the superior thermal conductivity of graphene is contributed not only by large ballistic thermal conductance but also by very long phonon mean free path (MFP). The long phonon MFP, explained by the low-dimensional nature and high sample purity of graphene, results in important isotope effects and size effects on thermal conduction. In terms of various scattering mechanisms in graphene, several approaches are suggested to control thermal conductivity. Among them, introducing rough boundaries and weakly-coupled interfaces are promising ways to suppress thermal conduction effectively. We also discuss the Seebeck effect of graphene. Graphene itself might not be a good thermoelectric material. However, the concepts developed by graphene research might be applied to improve thermoelectric performance of other materials. PMID:24610791

  20. Tunable thermoelectric properties in bended graphene nanoribbons

    NASA Astrophysics Data System (ADS)

    Chang-Ning, Pan; Jun, He; Mao-Fa, Fang

    2016-07-01

    The ballistic thermoelectric properties in bended graphene nanoribbons (GNRs) are systematically investigated by using atomistic simulation of electron and phonon transport. We find that the electron resonant tunneling effect occurs in the metallic-semiconducting linked ZZ-GNRs (the bended GNRs with zigzag edge leads). The electron-wave quantum interference effect occurs in the metallic-metallic linked AA-GNRs (the bended GNRs with armchair edge leads). These different physical mechanisms lead to the large Seebeck coefficient S and high electron conductance in bended ZZ-GNRs/AA-GNRs. Combined with the reduced lattice thermal conduction, the significant enhancement of the figure of merit ZT is predicted. Moreover, we find that the ZTmax (the maximum peak of ZT) is sensitive to the structural parameters. It can be conveniently tuned by changing the interbend length of bended GNRs. The magnitude of ZT ranges from the 0.15 to 0.72. Geometry-controlled ballistic thermoelectric effect offers an effective way to design thermoelectric devices such as thermocouples based on graphene. Project supported by the National Natural Science Foundation of China (Grant No. 61401153) and the Natural Science Foundation of Hunan Province, China (Grant Nos. 2015JJ2050 and 14JJ3126).

  1. Ballistic thermal transport properties at low temperatures in semiconductor nanowires-based heterojunctions

    NASA Astrophysics Data System (ADS)

    Yu, Xia; Xie, Zhong-Xiang; Liu, Jun-Hun; Chen, Qiao; Li, Ke-Min; Zhang, Yong

    2016-04-01

    In this paper, we study ballistic thermal transport properties at low temperatures in semiconductor nanowires-based heterojunctions under hard-wall boundary conditions (HWBCs) and stress-free boundary conditions (SFBCs). Here, the numerical calculations for the asymmetric heterojunction (ASHJ) and symmetric heterojunction (SHJ) are done. When SFBCs are employed, the transmission coefficient exhibits different behaviors between ASHJ and SHJ especially at low frequency, but when HWBCs are employed, the transmission coefficient displays similar smooth platforms in both heterojunctions. In low temperature limit, the quantized thermal conductance can be observed in SHJ under SFBCs regardless of the structural details. However, this quantization cannot be observed in ASHJ under SFBCs, and the thermal conductance is strongly sensitive to the transverse width ratio rather than the slant angle. With increasing the transverse width ratio, the thermal conductance in both heterojunctions gradually increases especially, and such the increasing degree is more evident at higher temperatures. A brief analysis of these results is given.

  2. Electrochemical properties of cathodic materials synthesized by low-temperature techniques

    NASA Astrophysics Data System (ADS)

    Pereira-Ramos, Jean-Pierre

    After having introduced the definition of 'low temperature techniques', the electrochemical properties of various cathodic materials (oxides) for secondary lithium batteries are reported. The influence of the way of synthesis upon their electrochemical behaviour is examined and illustrated through several examples. A presentation of electrochemical results discussed in relation with the specific chemical, physical and structural properties emphasizes the significant advances afforded by these techniques (sol-gel processes, precipitation, ion-exchange redox reactions, etc.) in obtaining new high-performance cathodic materials for secondary lithium batteries. The most interesting results are obtained for the vanadium and manganese systems.

  3. Effect of low temperature plasma on the functional properties of basmati rice flour.

    PubMed

    Thirumdas, Rohit; Deshmukh, R R; Annapure, U S

    2016-06-01

    The present study deals with the application of low temperature plasma on basmati rice flour and its effect on functional properties such as gel hydrations properties, flour hydration properties, gelatinization temperatures and antioxidant properties. The water holding capacity and water binding capacity were observed to be increased with increase in plasma power and time of treatment as the air plasma is known to make the surface more hydrophilic. XRD analysis revealed there is no significance difference in the crystalline structure after the plasma treatment. DSC shows a decrease in peak temperatures (Tp) after the treatment. Hot paste viscosities were observed to be decease from 692 to 591 BU was corresponded to decrease in peak temperature. The total polyphenolic content and reducing power was observed to be increased. The effects of plasma treatment on functional groups of polyphenols were observed by changes in absorption intensities using FTIR. This study demonstrates that the low temperature plasma treatmentis capable of improving the functional properties of basmati rice.

  4. Effect of low temperature plasma on the functional properties of basmati rice flour.

    PubMed

    Thirumdas, Rohit; Deshmukh, R R; Annapure, U S

    2016-06-01

    The present study deals with the application of low temperature plasma on basmati rice flour and its effect on functional properties such as gel hydrations properties, flour hydration properties, gelatinization temperatures and antioxidant properties. The water holding capacity and water binding capacity were observed to be increased with increase in plasma power and time of treatment as the air plasma is known to make the surface more hydrophilic. XRD analysis revealed there is no significance difference in the crystalline structure after the plasma treatment. DSC shows a decrease in peak temperatures (Tp) after the treatment. Hot paste viscosities were observed to be decease from 692 to 591 BU was corresponded to decrease in peak temperature. The total polyphenolic content and reducing power was observed to be increased. The effects of plasma treatment on functional groups of polyphenols were observed by changes in absorption intensities using FTIR. This study demonstrates that the low temperature plasma treatmentis capable of improving the functional properties of basmati rice. PMID:27478230

  5. Low temperature physical properties of a Ni-Mo-Cr alloy Haynes® 242™

    NASA Astrophysics Data System (ADS)

    Lu, J.; Han, K.; Choi, E. S.; Jo, Y.; Balicas, L.; Xin, Y.

    2007-06-01

    Haynes 242 is a Ni-Mo-Cr based superalloy. High strength and high fracture toughness at low temperatures make Haynes 242 an attractive choice for cryogenic applications such as the conduit material for the cable-in-conduit conductor of superconducting magnets. In this work, its low temperature physical properties including magnetization, specific heat, electrical resistivity, thermal conductivity, and Seebeck coefficient are measured from 2to300K. Haynes 242 shows Curie paramagnetism with a Curie constant C =0.0289K. The electrical resistivity has a minimum at ˜12K and shows weakly linear T dependence at high temperatures as expected. The specific heat Cp between 10 and 40K can be fitted by Cp=γT+AT3 with γ =9.43×10-5J/gK2 and A =5.91×10-7J/gK4. Below 10K, an upturn in Cp/T with decreasing T is interpreted by the existence of very small ferromagnetic clusters which is supported by our magnetization data. The thermal conductivity is analyzed by separating the electronic and phonon contributions. The relatively strong phonon thermal conduction at temperatures <100K results in effective Lorenz number a few times larger than the ideal Lorenz number. Our results suggest that Haynes 242 is suitable for many cryogenic applications including conduit for large superconducting magnet and low temperature probe.

  6. Characterizing the Physical and Thermal Properties of Planetary Regolith at Low Temperatures

    NASA Technical Reports Server (NTRS)

    Mantovani, James G.; Swanger, Adam; Townsend, Ivan I., III; Sibille, Laurent; Galloway, Gregory

    2014-01-01

    The success or failure of in-situ resource utilization for planetary surface exploration-whether for science, colonization, or commercialization-relies heavily on the design and implementation of systems that can effectively process planetary regolith and exploit its potential benefits. In most cases, this challenge necessarily includes the characterization of regolith properties at low temperatures (cryogenic). None of the nearby solar system destinations of interest, such as the moon, Mars and asteroids, possess a sufficient atmosphere to sustain the consistently "high" surface temperatures found on Earth. Therefore, they can experience permanent cryogenic temperatures or dramatic cyclical changes in surface temperature. Characterization of physical properties (e.g., specific heat, thermal and electrical conductivity) over the entire temperature profile is important when planning a mission to a planetary surface; however, the impact on mechanical properties due to the introduction of icy deposits must also be explored in order to devise effective and robust excavation technologies. The Granular Mechanics and Regolith Operations Laboratory and the Cryogenics Test Laboratory at NASA Kennedy Space Center are developing technologies and experimental methods to address these challenges and to aid in the characterization of the physical and mechanical properties of regolith at cryogenic temperatures. This paper will review the current state of knowledge concerning planetary regolith at low temperature, including that of icy regolith, and describe efforts to manipulate icy regolith through novel penetration and excavation techniques.

  7. Experiments with proteins at low temperature: What do we learn on properties in their functional state?

    NASA Astrophysics Data System (ADS)

    Ponkratov, V. V.; Wiedersich, J.; Friedrich, J.; Vanderkooi, J. M.

    2007-04-01

    The authors compared the spectral response of Zn-substituted horseradish peroxidase in a glycerol/water solvent to hydrostatic pressure at 2K and ambient temperature. The low temperature experiments clearly demonstrate the presence of at least three different conformations with drastically different elastic properties. However, the main conformation, which determines the fluorescence spectrum at ambient temperature, did not show any significant difference between low and high temperature and pressure. The authors conclude that the local compressibility of the heme pocket of the protein depends only very weakly on temperature.

  8. Nondestructive Methods to Characterize Rock Mechanical Properties at Low-Temperature: Applications for Asteroid Capture Technologies

    NASA Astrophysics Data System (ADS)

    Savage, Kara A.

    Recent government initiatives and commercial activities have targeted asteroids for in situ material characterization, manipulation, and possible resource extraction. Most of these activities and missions have proposed significant robotic components, given the risks and costs associated with manned missions. To successfully execute these robotic activities, detailed mechanical characteristics of the target space bodies must be known prior to contact, in order to appropriately plan and direct the autonomous robotic protocols. Unfortunately, current estimates of asteroid mechanical properties are based on limited direct information, and significant uncertainty remains specifically concerning internal structures, strengths, and elastic properties of asteroids. One proposed method to elucidate this information is through in situ, nondestructive testing of asteroid material immediately after contact, but prior to any manipulation or resource extraction activities. While numerous nondestructive rock characterization techniques have been widely deployed for terrestrial applications, these methods must be adapted to account for unique properties of asteroid material and environmental conditions of space. For example, asteroid surface temperatures may range from -100°C to 30°C due to diurnal cycling, and these low temperatures are especially noteworthy due to their deleterious influence on non-destructive testing. As a result, this thesis investigates the effect of low temperature on the mechanical characteristics and nondestructive technique responses of rock material. Initially, a novel method to produce low temperature rock samples was developed. Dry ice and methanol cooling baths of specific formulations were used to decrease rock to temperatures ranging from -60°C to 0°C. At these temperatures, shale, chalk, and limestone rock samples were exposed to several nondestructive and conventional mechanical tests, including Schmidt hammer, ultrasonic pulse velocity, point

  9. Multifunctional fuel additives derived from aminodiols to improve the low-temperature properties of distillate fuels

    SciTech Connect

    Baillargeon, D.J.; Cardis, A.B.; Heck, D.B.

    1991-03-19

    This patent describes a liquid hydrocarbyl fuel composition comprising a major amount of a combustible liquid hydrocarbon fuel and a minor low-temperature properties improving amount of from about 0.001% to about 10 wt % based on the total weight of the composition of an additive comprising a product of reaction made by reacting comonomers. It comprises: an aminodiol or combination or mixture of aminodiols with a reactive acid/anhydride product alone or in combination with other monomers derived from the reaction of benzophenone tetracarboxylic dianhydride or its acid equivalent.

  10. Thermoelectric Properties of Higher Manganese Silicide Nanowires

    NASA Astrophysics Data System (ADS)

    Moore, Arden; Higgins, Jeremy; Zhou, Feng; Jin, Song; Shi, Li

    2009-03-01

    Higher manganese silicides (HMS) have a relatively high thermoelectric figure of merit (ZT) of about 0.7. HMS nanowires have been synthesized using a chemical vapor deposition method. In this work, the thermoelectric properties of individual HMS nanowires are measured and analyzed to determine the role of size effects on electron and phonon transport as well as potential ZT enhancement. Measurements of Seebeck coefficient, electrical conductivity, and thermal conductivity were performed using both suspended and substrate-based microdevices. Results show that the Seebeck coefficient of two as-synthesized 60 nm diameter nanowires between 300-400K is about 25-50% lower than that of single crystal bulk parallel to the c-axis, while the electrical conductivity values are about 25% lower than bulk single crystal in the same direction. The thermal conductivity of one 60 nm diameter nanowire at room temperature was found to be four times smaller than the bulk value along the c-axis. The large reduction in thermal conductivity and small to moderate impact on electrical transport may lead to HMS nanowires with enhanced ZT.

  11. Electrical properties of the YSZ/STO/YSZ-STO superlattice electrolyte film at low temperatures

    NASA Astrophysics Data System (ADS)

    Xu, Yan-Bin; Kang, Zhen-Feng; Fan, Yue; Xiao, Ling-Ling; Bo, Qing-Rui; Ding, Tie-Zhu

    2016-02-01

    This study is focused on characterization of the low temperature properties of the YSZ/STO/YSZ superlattice film deposited onto unilateral polished SrTiO3 (STO) monocrystalline substrates using pulsed laser deposition (PLD). The phase composition, structure, surface morphology and electrical properties of the oxygen ion conducting electrolyte YSZ/STO/YSZ multilayers were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electrochemical impedance spectroscopy (EIS). The minimum conductivity activation energy of YSZ/STO/YSZ is 0.76 eV at 300-500°C. The YSZ/STO/YSZ superlattice film shows an enhancement in conductivity by three orders of magnitude compared to bulk YSZ at a temperature of 300°C.

  12. Lattice dynamics and thermoelectric properties of nanocrystalline silicon-germanium alloys

    DOE PAGES

    Claudio, Tania; Stein, Niklas; Peterman, Nils; Stroppa, Daniel; Koza, Michael M.; Wiggers, Hartmut; Klobes, B.; Schierning, Gabi; Hermann, Raphael P.

    2015-10-26

    The lattice dynamics and thermoelectric properties of sintered phosphorus-doped nanostructured silicon- germanium alloys obtained by gas-phase synthesis were studied. Measurements of the density of phonon states by inelastic neutron scattering were combined with measurements of the elastic constants and the low- temperature heat capacity. A strong influence of nanostructuring and alloying on the lattice dynamics was observed. The thermoelectric transport properties of samples with different doping as well as samples sintered at different temperature were characterized between room temperature and 1000C. A peak figure of merit zT = 0:88 at 900C is observed and comparatively insensitive to the aforementioned param-more » eter variations.« less

  13. Optical and electrical properties and phonon drag effect in low temperature TEP measurements of AgSbSe2 thin films

    NASA Astrophysics Data System (ADS)

    Namitha Asokan, T.; Urmila, K. S.; Jacob, Rajani; Reena Philip, Rachel; Okram, G. S.; Ganesan, V.; Pradeep, B.

    2014-05-01

    Polycrystalline thin films of silver antimony selenide have been deposited using a reactive evaporation technique onto an ultrasonically cleaned glass substrate at a vacuum of 10-5 torr. The preparative parameters, like substrate temperature and incident fluxes, have been properly controlled in order to get stoichiometric, good quality and reproducible thin film samples. The samples are characterized by XRD, SEM, AFM and a UV—vis—NIR spectrophotometer. The prepared sample is found to be polycrystalline in nature. From the XRD pattern, the average particle size and lattice constant are calculated. The dislocation density, strain and number of crystallites per unit area are evaluated using the average particle size. The dependence of the electrical conductivity on the temperature has also been studied and the prepared AgSbSe2 samples are semiconducting in nature. The AgSbSe2 thin films exhibited an indirect allowed optical transition with a band gap of 0.64 eV. The compound exhibits promising thermoelectric properties, a large Seebeck coefficient of 30 mV/K at 48 K due to strong phonon electron interaction. It shows a strong temperature dependence on thermoelectric properties, including the inversion of a dominant carrier type from p to n over a low temperature range 9-300 K, which is explained on the basis of a phonon drag effect.

  14. Thermoelectric properties by high temperature annealing

    NASA Technical Reports Server (NTRS)

    Ren, Zhifeng (Inventor); Chen, Gang (Inventor); Kumar, Shankar (Inventor); Lee, Hohyun (Inventor)

    2009-01-01

    The present invention generally provides methods of improving thermoelectric properties of alloys by subjecting them to one or more high temperature annealing steps, performed at temperatures at which the alloys exhibit a mixed solid/liquid phase, followed by cooling steps. For example, in one aspect, such a method of the invention can include subjecting an alloy sample to a temperature that is sufficiently elevated to cause partial melting of at least some of the grains. The sample can then be cooled so as to solidify the melted grain portions such that each solidified grain portion exhibits an average chemical composition, characterized by a relative concentration of elements forming the alloy, that is different than that of the remainder of the grain.

  15. Optical properties of single wurtzite/zinc-blende ZnSe nanowires grown at low temperature

    SciTech Connect

    Zannier, V.; Cremel, T.; Kheng, K.; Artioli, A.; Ferrand, D.; Grillo, V.

    2015-09-07

    ZnSe nanowires with a dominant wurtzite structure have been grown at low temperature (300 °C) by molecular beam epitaxy assisted by solid Au nanoparticles. The nanowires emission is polarized perpendicularly to their axis in agreement with the wurtzite selection rules. Alternations of wurtzite and zinc-blende regions have been observed by transmission electron microscopy, and their impact on the nanowires optical properties has been studied by microphotoluminescence. The nanowires show a dominant intense near-band-edge emission as well as the ZnSe wurtzite free exciton line. A type II band alignment between zinc-blende and wurtzite ZnSe is evidenced by time-resolved photoluminescence. From this measurement, we deduce values for the conduction and valence band offsets of 98 and 50 meV, respectively.

  16. Simple insertible high performance variable temperature regulator for measurement of physical properties at low temperature.

    PubMed

    Nagendran, R; Satya, A T; Chinnasamy, N; Baskaran, R; Janawadkar, M P

    2016-04-01

    An impedance capillary based Variable Temperature Regulator (VTR) for regulation of temperature in the range of 4.2 K-300 K, which can be detached and inserted into any experimental setup with a 50 mm diameter top access, has been designed, fabricated, and tested. The VTR may be used as a highly compact probe, which can be readily inserted in any liquid helium dewar or cryostat to realize uniform rates of cooling/heating and to achieve excellent temperature stability of ±1 mK at any temperature between 4.2 K and 300 K. VTR has been subjected to extensive experimental testing to arrive at optimum values of control parameters that are expected to influence its performance. The VTR may be integrated into any experimental setup for measurement of physical properties at low temperatures.

  17. Low temperature magnetic properties of magnesium substituted YbMnO{sub 3}

    SciTech Connect

    Sattibabu, Bhumireddi Bhatnagar, Anil K. Mohan, Dasari Das, Dibakar Sundararaman, Mahadevan; Siruguri, Vasudeva; Rayaprol, Sudhindra

    2014-04-24

    Structural and magnetic properties of polycrystalline Yb{sub 1−x}Mg{sub x}MnO{sub 3} (x = 0, 0.05 and 0.10) hexagonal compounds prepared by solid state method, have been studied. The structural analyses of the samples were carried out by Rietveld analysis of neutron diffraction data. With increasing Mg content, we find that the lattice parameter a decreases and c increases whereas the overall Mn-O bond length decreases. Magnetization measured as a function of magnetic field at 2.5 K exhibits hysteresis, which is attributed to ferromagnetic like ordering of Yb{sup 3+} sublattice. Temperature dependence of ac magnetic susceptibility, χ{sub ac}(T), shows no signature of spin-glass behavior. χ”(T) exhibits a sudden increase at low temperatures which is due to ordering of Yb{sup 3+} sublattice.

  18. Low-temperature ferromagnetic properties in Co-doped Ag{sub 2}Se nanoparticles

    SciTech Connect

    Yang, Fengxia E-mail: xia9020@hust.edu.cn; Yu, Gen; Han, Chong; Liu, Tingting; Zhang, Duanming; Xia, Zhengcai E-mail: xia9020@hust.edu.cn

    2014-01-06

    β-Ag{sub 2}Se is a topologically nontrivial insulator. The magnetic properties of Co-doped Ag{sub 2}Se nanoparticles with Co concentrations up to 40% were investigated. The cusp of zero-field-cooling magnetization curves and the low-temperature hysteresis loops were observed. With increasing concentration of Co{sup 2+} ions mainly substituting Ag{sub I} sites in the Ag{sub 2}Se structure, the resistivity, Curie temperature T{sub c}, and magnetization increased. At 10 T, a sharp drop of resistance near T{sub c} was detected due to Co dopants. The ferromagnetic behavior in Co-doped Ag{sub 2}Se might result from the intra-layer ferromagnetic coupling and surface spin. This magnetic semiconductor is a promising candidate in electronics and spintronics.

  19. Low-temperature mechanical and magnetic properties of the reduced activation martensitic steel

    NASA Astrophysics Data System (ADS)

    Ding, Hui-Li; Zhang, Tao; Gao, Rui; Wang, Xian-Ping; Fang, Qian-Feng; Liu, Chang-Song; Suo, Jin-Ping

    2015-09-01

    Mechanical and magnetic properties as well as their relationship in the reduced activation martensitic (RAM) steel were investigated in the temperature range from -90°C to 20°C. Charpy impact tests show that the ductile-to-brittle transition temperature (DBTT) of the RAM steel is about -60°C. Low-temperature tensile tests show that the yield strength, ultimate tensile strength and total elongation values increase as temperature decreases, indicating that the strength and plasticity below the DBTT are higher than those above the DBTT. The coercive field ( H C) in the scale of logarithm decreases linearly with the increasing temperature and the absolute value of the slope of ln H C versus temperature above the DBTT is obviously larger than that below the DBTT, also confirmed in the T91 steel. The results indicate that the non-destructive magnetic measurement is a promising candidate method for the DBTT detection of ferromagnetic steels.

  20. Polyesters Based on Linoleic Acid for Biolubricant Basestocks: Low-Temperature, Tribological and Rheological Properties.

    PubMed

    Abdullah, Bashar Mudhaffar; Zubairi, Saiful Irwan; Huri, Hasniza Zaman; Hairunisa, Nany; Yousif, Emad; Basu, Roma Choudhury

    2016-01-01

    Presently, plant oils which contain high percentage of linoleic acid 1 are perceived to be a viable alternative to mineral oil for biolubricant applications due to their biodegradability and technical properties. In order to get biodegradable lubricant, triester derivatives compounds (1-5) were synthesized and characterized. The processes involved were monoepoxidation of linoleic acid 2, oxirane ring opening 3, esterification 4 and acylation 5. The structures of the products were confirmed by FTIR, 1H and 13C-NMR and LC-MS. The results that showed lowest temperature properties were obtained for triester 5, with a pour point value (PP) of -73°C, highest onset temperature (260°C) and lowest volatility at 0.30%. Viscosity index (VI) increased for the ester's synthetic compounds (2, 3, 4, 5), while the PP decreased. This behavior is the result of the increase of the chain length of the branching agents. Triester based linoleic acid has improved properties such as low-temperature and tribological properties. These results will make it feasible for plant oil to be used for biolubricants, fuels in chain saws, transmission oil and brake fluid.

  1. Polyesters Based on Linoleic Acid for Biolubricant Basestocks: Low-Temperature, Tribological and Rheological Properties

    PubMed Central

    Abdullah, Bashar Mudhaffar; Zubairi, Saiful Irwan; Huri, Hasniza Zaman; Hairunisa, Nany; Yousif, Emad; Basu, Roma Choudhury

    2016-01-01

    Presently, plant oils which contain high percentage of linoleic acid 1 are perceived to be a viable alternative to mineral oil for biolubricant applications due to their biodegradability and technical properties. In order to get biodegradable lubricant, triester derivatives compounds (1–5) were synthesized and characterized. The processes involved were monoepoxidation of linoleic acid 2, oxirane ring opening 3, esterification 4 and acylation 5. The structures of the products were confirmed by FTIR, 1H and 13C-NMR and LC-MS. The results that showed lowest temperature properties were obtained for triester 5, with a pour point value (PP) of -73°C, highest onset temperature (260°C) and lowest volatility at 0.30%. Viscosity index (VI) increased for the ester’s synthetic compounds (2, 3, 4, 5), while the PP decreased. This behavior is the result of the increase of the chain length of the branching agents. Triester based linoleic acid has improved properties such as low-temperature and tribological properties. These results will make it feasible for plant oil to be used for biolubricants, fuels in chain saws, transmission oil and brake fluid. PMID:27008312

  2. Polyesters Based on Linoleic Acid for Biolubricant Basestocks: Low-Temperature, Tribological and Rheological Properties.

    PubMed

    Abdullah, Bashar Mudhaffar; Zubairi, Saiful Irwan; Huri, Hasniza Zaman; Hairunisa, Nany; Yousif, Emad; Basu, Roma Choudhury

    2016-01-01

    Presently, plant oils which contain high percentage of linoleic acid 1 are perceived to be a viable alternative to mineral oil for biolubricant applications due to their biodegradability and technical properties. In order to get biodegradable lubricant, triester derivatives compounds (1-5) were synthesized and characterized. The processes involved were monoepoxidation of linoleic acid 2, oxirane ring opening 3, esterification 4 and acylation 5. The structures of the products were confirmed by FTIR, 1H and 13C-NMR and LC-MS. The results that showed lowest temperature properties were obtained for triester 5, with a pour point value (PP) of -73°C, highest onset temperature (260°C) and lowest volatility at 0.30%. Viscosity index (VI) increased for the ester's synthetic compounds (2, 3, 4, 5), while the PP decreased. This behavior is the result of the increase of the chain length of the branching agents. Triester based linoleic acid has improved properties such as low-temperature and tribological properties. These results will make it feasible for plant oil to be used for biolubricants, fuels in chain saws, transmission oil and brake fluid. PMID:27008312

  3. Nanostructures having high performance thermoelectric properties

    DOEpatents

    Yang, Peidong; Majumdar, Arunava; Hochbaum, Allon I; Chen, Renkun; Delgado, Raul Diaz

    2014-05-20

    The invention provides for a nanostructure, or an array of such nanostructures, each comprising a rough surface, and a doped or undoped semiconductor. The nanostructure is an one-dimensional (1-D) nanostructure, such a nanowire, or a two-dimensional (2-D) nanostructure. The nanostructure can be placed between two electrodes and used for thermoelectric power generation or thermoelectric cooling.

  4. Nanostructures having high performance thermoelectric properties

    DOEpatents

    Yang, Peidong; Majumdar, Arunava; Hochbaum, Allon I.; Chen, Renkun; Delgado, Raul Diaz

    2015-12-22

    The invention provides for a nanostructure, or an array of such nanostructures, each comprising a rough surface, and a doped or undoped semiconductor. The nanostructure is an one-dimensional (1-D) nanostructure, such a nanowire, or a two-dimensional (2-D) nanostructure. The nanostructure can be placed between two electrodes and used for thermoelectric power generation or thermoelectric cooling.

  5. Observation of glass-like low-temperature anomalies in the acoustic properties of nanostructured metals

    NASA Astrophysics Data System (ADS)

    Natsik, V. D.; Vatazhuk, E. N.; Pal-Val, P. P.; Pal-Val, L. N.; Moskalenko, V. A.

    2013-12-01

    The values and temperature dependences of the dynamic Young's modulus E(T) of two metals (Ti, Zr) in crystalline (CR) and nanostructured (NS) states are measured by the composite vibrator method at a frequency of ω = 5.105 s-1 over temperatures of 2-20 K. The transition from CR (coarse grained polycrystals) to NS (ultra-fine grained polycrystals) is induced by severe plastic deformation (SPD). The transition of the metals into the NS state is found to be accompanied by a softening of the modulus by a few percent and by the appearance of a distinctive feature in the ENS(T) curves: a transition from a logarithmic to a power-law dependence with increasing temperature at a crossover temperature Tc ≈ 6-8 K, a behavior typical of the elastic moduli of glasses. Structural distortions in the NS state with atomic disorder properties (a glass subsystem or "phase") are interpreted in terms of dislocation concepts because of the accumulation of high densities of dislocations in metals with random configurations of the dislocation lines induced by SPD. In an appendix the dynamic properties of the dislocation lines fragments are compared, and an analogy established, with the dynamics of quasi-local excitations in glasses (so-called two-level tunnel systems and harmonic oscillators), which are invoked in the theory of glasses to describe their low-temperature properties.

  6. Efficient Visible-Light Photocatalytic Properties in Low-Temperature Bi-Nb-O System Photocatalysts

    NASA Astrophysics Data System (ADS)

    Zhai, Haifa; Shang, Shuying; Zheng, Liuyang; Li, Panpan; Li, Haiqin; Luo, Hongying; Kong, Jizhou

    2016-08-01

    Low-temperature Bi-Nb-O system photocatalysts were prepared by a citrate method using homemade water-soluble niobium precursors. The structures, morphologies, and optical properties of Bi-Nb-O system photocatalysts with different compositions were investigated deeply. All the Bi-Nb-O powders exhibit appreciably much higher photocatalytic efficiency of photo-degradation of methyl violet (MV), especially for Bi-Nb-O photocatalysts sintered at 750 °C (BNO750), only 1.5 h to completely decompose MV, and the obtained first-order rate constant ( k) is 1.94/h. A larger degradation rate of Bi-Nb-O photocatalysts sintered at 550 °C (BNO550) can be attributed to the synergistic effect between β-BiNbO4 and Bi5Nb3O15. Bi5Nb3O15 with small particle size on β-BiNbO4 surface can effectively short the diffuse length of electron. BNO750 exhibits the best photocatalytic properties under visible-light irradiation, which can be attributed to its better crystallinity and the synergistic effect between β-BiNbO4 and α-BiNbO4. The small amount of α-BiNbO4 loading on surface of β-BiNbO4 can effectively improve the electron and hole segregation and migration. Holes are the main active species of Bi-Nb-O system photocatalysts in aqueous solution under visible-light irradiation.

  7. Mechanical and electrical properties of low temperature phase MnBi

    NASA Astrophysics Data System (ADS)

    Jiang, Xiujuan; Roosendaal, Timothy; Lu, Xiaochuan; Palasyuk, Olena; Dennis, Kevin W.; Dahl, Michael; Choi, Jung-Pyung; Polikarpov, Evgueni; Marinescu, Melania; Cui, Jun

    2016-01-01

    Low temperature phase (LTP) manganese bismuth (MnBi) is a promising rare-earth-free permanent magnet material due to its high intrinsic coercivity and large positive temperature coefficient. While scientists are making progress on fabricating bulk MnBi magnets, engineers have begun considering MnBi magnets for motor applications. Physical properties other than magnetic ones could significantly affect motor design. Here, we report results of our investigation on the mechanical and electrical properties of bulk LTP MnBi and their temperature dependence. A MnBi ingot was prepared using an arc melting technique and subsequently underwent grinding, sieving, heat treatment, and cryomilling. The resultant powders with a particle size of ˜5 μm were magnetically aligned, cold pressed, and sintered at a predefined temperature. Micro-hardness testing was performed on a part of original ingot and we found that the hardness of MnBi was 109 ± 15 HV. The sintered magnets were subjected to compressive testing at different temperatures and it was observed that a sintered MnBi magnet fractured when the compressive stress exceeded 193 MPa at room temperature. Impedance spectra were obtained using electrochemical impedance spectroscopy at various temperatures and we found that the electrical resistance of MnBi at room temperature was about 6.85 μΩ m.

  8. Thermoelectric properties of gallium-doped p-type germanium

    NASA Astrophysics Data System (ADS)

    Ohishi, Yuji; Takarada, Sho; Aikebaier, Yusufu; Muta, Hiroaki; Kurosaki, Ken; Yamanaka, Shinsuke; Miyazaki, Yoshinobu; Uchida, Noriyuki; Tada, Tetsuya

    2016-05-01

    In this study, the temperature-dependent thermoelectric properties of p-type single-crystal Ge, which is a useful material for thermoelectric applications owing to its significantly high carrier mobility, were investigated. The thermoelectric properties of Ga-doped (5.7 × 1016, 3.4 × 1018, and 1.0 × 1019 cm-3) p-type single-crystal Ge were measured from room temperature to 770 K. The sample with a carrier concentration of 1.0 × 1019 cm-3 showed the highest thermoelectric figure of merit, ZT, over the entire measured temperature range. The maximum ZT value was 0.06 at 650 K. A theoretical model based on the Boltzmann transport equation with relaxation-time approximation was developed and quantitatively reproduced the experimentally observed data. The optimal impurity concentration predicted by this model was 3 × 1019 cm-3 at 300 K and increased with temperature.

  9. Effects of the low-temperature thermo-alkaline method on the rheological properties of sludge.

    PubMed

    Wang, Ruikun; Zhao, Zhenghui; Yin, Qianqian; Liu, Jianzhong

    2016-07-15

    Municipal sewage sludge (hereafter referred to as sludge) in increasing amounts is a serious threat to the environment and human health. Sludge is difficult to dispose because of its complex properties, such as high water content, viscosity, and hazardous compound concentration. The rheological properties of sludge also significantly influence treatment processes, including stirring, mixing, pumping, and conveying. Improving the rheological properties and reducing the apparent viscosity of sludge are conducive to economic and safe sludge treatment. In this study, the low-temperature thermo-alkaline (LTTA) method was used to modify sludge. Compared with the original sludge with an apparent viscosity at 100 s(-1) (η100) of 979.3 mPa s, the sludge modified under 90 °C-Ca(OH)2-1 h and 90 °C-NaOH-1 h conditions exhibited lower η100 values of 208.7 and 110.8 mPa s respectively. The original sludge exhibited a pseudoplastic behavior. After modification, the pseudoplastic behavior was weakened, and the sludge gradually tended to behave as Newton fluids. The hysteresis loop observed during the shear rate cycle was mainly caused by the viscoelasticity of the sludge. The hysteresis loop area (Hla) reflected to a certain extent the energy required to break the elastic solid structure of the sludge. The larger the Hla, the more energy was needed. However, this result should be evaluated comprehensively by considering other sludge parameters, such as yield stress and apparent viscosity. Hla may also reflect the damage degree of the sludge structure after shearing action. The irreversible destruction of the structure during shearing may also increase Hla. PMID:27082259

  10. Mechanical properties of 1950's vintage 304 stainless steel weldment components after low temperature neutron irradiation

    SciTech Connect

    Sindelar, R.L.; Caskey, G.R. Jr.; Thomas, J.K. ); Hawthorne, J.R.; Hiser, A.L. ); Lott, R.A.; Begley, J.A.; Shogan, R.P. . Science and Technology Center)

    1991-01-01

    The reactor vessels of the nuclear production reactors at the Savannah River Site (SRS) were constructed in the 1950's from Type 304 stainless steel plates welded with Type 308 stainless steel filler using the multipass metal inert gas process. An irradiated mechanical properties database has been developed for the vessel with materials from archival primary coolant system piping irradiated at low temperatures (75 to 150{degrees}C) in the State University of New York at Buffalo reactor (UBR) and the High Flux Isotope Reactor (HFIR) to doses of 0.065 to 2.1 dpa. Fracture toughness, tensile, and Charpy-V impact properties of the weldment components (base, weld, and weld heat-affected-zone (HAZ)) have been measured at temperatures of 25{degrees}C and 125{degrees}C in the L-C and C-L orientations for materials in both the irradiated and unirradiated conditions for companion specimens. Fracture toughness and tensile properties of specimens cut from an SRS reactor vessel sidewall with doses of 0.1 and 0.5 dpa were also measured at temperatures of 25 and 125{degrees}C. The irradiated materials exhibit hardening with loss of work hardenability and a reduction in toughness relative to the unirradiated materials. The HFIR-irradiated materials show an increase in yield strength between about 20% and 190% with a concomitant tensile strength increase between about 15% to 30%. The elastic-plastic fracture toughness parameters and Charpy-V energy absorption both decrease and show only a slight sensitivity to dose. The irradiation-induced decrease in the elastic-plastic fracture toughness (J{sub def} at 1 mm crack extension) is between 20% to 65%; the range of J{sub 1C} values are 72.8 to 366 kJ/m{sup 2} for the irradiated materials. Similarly, Charpy V-notch results show a 40% to 60% decrease in impact energies.

  11. Mechanical properties of 1950`s vintage 304 stainless steel weldment components after low temperature neutron irradiation

    SciTech Connect

    Sindelar, R.L.; Caskey, G.R. Jr.; Thomas, J.K.; Hawthorne, J.R.; Hiser, A.L.; Lott, R.A.; Begley, J.A.; Shogan, R.P.

    1991-12-31

    The reactor vessels of the nuclear production reactors at the Savannah River Site (SRS) were constructed in the 1950`s from Type 304 stainless steel plates welded with Type 308 stainless steel filler using the multipass metal inert gas process. An irradiated mechanical properties database has been developed for the vessel with materials from archival primary coolant system piping irradiated at low temperatures (75 to 150{degrees}C) in the State University of New York at Buffalo reactor (UBR) and the High Flux Isotope Reactor (HFIR) to doses of 0.065 to 2.1 dpa. Fracture toughness, tensile, and Charpy-V impact properties of the weldment components (base, weld, and weld heat-affected-zone (HAZ)) have been measured at temperatures of 25{degrees}C and 125{degrees}C in the L-C and C-L orientations for materials in both the irradiated and unirradiated conditions for companion specimens. Fracture toughness and tensile properties of specimens cut from an SRS reactor vessel sidewall with doses of 0.1 and 0.5 dpa were also measured at temperatures of 25 and 125{degrees}C. The irradiated materials exhibit hardening with loss of work hardenability and a reduction in toughness relative to the unirradiated materials. The HFIR-irradiated materials show an increase in yield strength between about 20% and 190% with a concomitant tensile strength increase between about 15% to 30%. The elastic-plastic fracture toughness parameters and Charpy-V energy absorption both decrease and show only a slight sensitivity to dose. The irradiation-induced decrease in the elastic-plastic fracture toughness (J{sub def} at 1 mm crack extension) is between 20% to 65%; the range of J{sub 1C} values are 72.8 to 366 kJ/m{sup 2} for the irradiated materials. Similarly, Charpy V-notch results show a 40% to 60% decrease in impact energies.

  12. Thermoelectric properties of semiconductor nanowire networks

    DOE PAGES

    Roslyak, Oleksiy; Piryatinski, Andrei

    2016-03-28

    To examine the thermoelectric (TE) properties of a semiconductor nanowire (NW) network, we propose a theoretical approach mapping the TE network on a two-port network. In contrast to a conventional single-port (i.e., resistor)network model, our model allows for large scale calculations showing convergence of TE figure of merit, ZT, with an increasing number of junctions. Using this model, numerical simulations are performed for the Bi2Te3 branched nanowire (BNW) and Cayley tree NW (CTNW) network. We find that the phonon scattering at the network junctions plays a dominant role in enhancing the network ZT. Specifically, disordered BNW and CTNW demonstrate anmore » order of magnitude higher ZT enhancement compared to their ordered counterparts. Formation of preferential TE pathways in CTNW makes the network effectively behave as its BNW counterpart. In conclusion, we provide formalism for simulating large scale nanowire networks hinged upon experimentally measurable TE parameters of a single T-junction.« less

  13. Processing, Microstructure and Electric Properties of Buried Resistors in Low Temperature Co-Fired Ceramics

    SciTech Connect

    Dimos, D.B.; Kotula, P.G.; Miera, B.K.; Rodriguez, M.A.; Yang, Pin

    1999-09-17

    The electrical properties were investigated for ruthenium oxide based devitrifiable resistors embedded within low temperature co-fired ceramics. Special attention was given to the processing conditions and their affects on resistance and temperature coefficient of resistance (TCR). Results indicate that the conductance for these buried resistors is limited by tunneling of charge carriers through the thin glass layer between ruthenium oxide particles. A modified version of the tunneling barrier model is proposed to more accurately account for the microstructure ripening observed during thermal processing. The model parameters determined from curve fitting show that charging energy (i.e., the energy required for a charge carrier to tunnel through the glass barrier) is strongly dependent on particle size and particle-particle separation between ruthenium oxide grains. Initial coarsening of ruthenium oxide grains was found to reduce the charging energy and lower the resistance. However, when extended ripening occurs, the increase in particle-particle separation increases the charging energy, reduces the tunneling probability and gives rise to a higher resistance. The trade-off between these two effects results an optimum microstructure with a minimum resistance and TCR. Furthermore, the TCR of these resistors has been shown to be governed by the magnitude of the charging energy. Model parameters determined by our analysis appear to provide quantitative physical interpretations to the microstructural change in the resistor, which in turn, are controlled by the processing conditions.

  14. Low temperature crystal structure and magnetic properties of RAl{sub 2}

    SciTech Connect

    Pathak, Arjun K. Paudyal, D.; Gschneidner, K. A.; Pecharsky, V. K.

    2014-05-07

    Low temperature crystal structure and magnetic properties of RAl{sub 2} (R = Pr and Nd) have been studied using temperature dependent powder x-ray diffraction, magnetization, and heat capacity measurements. Unlike PrAl{sub 2}, NdAl{sub 2} retains cubic MgCu{sub 2}-type structure from room temperature down to 5 K, which is also confirmed from first principles electronic structure calculations. The magnetization measurements show both PrAl{sub 2} and NdAl{sub 2} order ferromagnetically at T{sub C} = 32 K and 77 K, respectively. However, the magnetization measurements show the former is a hard ferromagnet compared to the latter which is a soft ferromagnetic material. The magnetic entropy change obtained from heat capacity measurements at ΔH = 30 kOe for PrAl{sub 2} and NdAl{sub 2} are 3.15 J mol{sup −1} K{sup −1} and 1.18 J mol{sup −1} K{sup −1}, respectively.

  15. Effect of low temperature annealing on the wear properties of NITINOL

    NASA Astrophysics Data System (ADS)

    Mukunda, Sriram; Nath. S, Narendra; Herbert, Mervin A.; Mukunda, P. G.

    2016-02-01

    NiTi shape memory alloy is a wonder material that is a solution looking for problems. The material finds wide biomedical applications like endodontic files for root canal treatment and cardiovascular stents. This material has rendered the surgical procedure simple compared to that with the existing Stainless Steel (SS) or titanium ones. NiTi as an endodontic file would cause less discomfort to the patients in comparison to that with far stiffer SS or titanium ones. Here nearly equi-atomic 50:50 commercial NiTi rods were subjected to low temperature aging at 300 to 450°C. The wear resistance of the as-received and the heat-treated samples was studied using adhesive wear tests on hardened steel counter face. Abrasive wear tests were run against Alumina disc to simulate the working of endodontic drills and files against dental hard and soft tissues. The abrasive wear resistance is expected to be proportional to the Vickers Hardness of the material and is high for the 450°C heat-treated sample. A correlation between the mechanical properties and microstructures of this material is attempted

  16. Efficient Visible-Light Photocatalytic Properties in Low-Temperature Bi-Nb-O System Photocatalysts.

    PubMed

    Zhai, Haifa; Shang, Shuying; Zheng, Liuyang; Li, Panpan; Li, Haiqin; Luo, Hongying; Kong, Jizhou

    2016-12-01

    Low-temperature Bi-Nb-O system photocatalysts were prepared by a citrate method using homemade water-soluble niobium precursors. The structures, morphologies, and optical properties of Bi-Nb-O system photocatalysts with different compositions were investigated deeply. All the Bi-Nb-O powders exhibit appreciably much higher photocatalytic efficiency of photo-degradation of methyl violet (MV), especially for Bi-Nb-O photocatalysts sintered at 750 °C (BNO750), only 1.5 h to completely decompose MV, and the obtained first-order rate constant (k) is 1.94/h. A larger degradation rate of Bi-Nb-O photocatalysts sintered at 550 °C (BNO550) can be attributed to the synergistic effect between β-BiNbO4 and Bi5Nb3O15. Bi5Nb3O15 with small particle size on β-BiNbO4 surface can effectively short the diffuse length of electron. BNO750 exhibits the best photocatalytic properties under visible-light irradiation, which can be attributed to its better crystallinity and the synergistic effect between β-BiNbO4 and α-BiNbO4. The small amount of α-BiNbO4 loading on surface of β-BiNbO4 can effectively improve the electron and hole segregation and migration. Holes are the main active species of Bi-Nb-O system photocatalysts in aqueous solution under visible-light irradiation. PMID:27576523

  17. Efficient Visible-Light Photocatalytic Properties in Low-Temperature Bi-Nb-O System Photocatalysts.

    PubMed

    Zhai, Haifa; Shang, Shuying; Zheng, Liuyang; Li, Panpan; Li, Haiqin; Luo, Hongying; Kong, Jizhou

    2016-12-01

    Low-temperature Bi-Nb-O system photocatalysts were prepared by a citrate method using homemade water-soluble niobium precursors. The structures, morphologies, and optical properties of Bi-Nb-O system photocatalysts with different compositions were investigated deeply. All the Bi-Nb-O powders exhibit appreciably much higher photocatalytic efficiency of photo-degradation of methyl violet (MV), especially for Bi-Nb-O photocatalysts sintered at 750 °C (BNO750), only 1.5 h to completely decompose MV, and the obtained first-order rate constant (k) is 1.94/h. A larger degradation rate of Bi-Nb-O photocatalysts sintered at 550 °C (BNO550) can be attributed to the synergistic effect between β-BiNbO4 and Bi5Nb3O15. Bi5Nb3O15 with small particle size on β-BiNbO4 surface can effectively short the diffuse length of electron. BNO750 exhibits the best photocatalytic properties under visible-light irradiation, which can be attributed to its better crystallinity and the synergistic effect between β-BiNbO4 and α-BiNbO4. The small amount of α-BiNbO4 loading on surface of β-BiNbO4 can effectively improve the electron and hole segregation and migration. Holes are the main active species of Bi-Nb-O system photocatalysts in aqueous solution under visible-light irradiation.

  18. Study of Electrical Properties in SHI Irradiated 6H-SiC Crystals using Low Temperature Impedance Spectroscopy

    NASA Astrophysics Data System (ADS)

    Viswanathan, E.; Murugaraj, R.; Selvakumar, S.; Kanjilal, D.; Sivaji, K.

    2011-07-01

    In the present work, low temperature impedance measurements were made on the pristine and Ag12+ ions irradiated 6H-SiC samples. The conductivity properties were studied at low temperature. The activation energies were calculated from the Arrhenius plot of d.c conductivity and impedance relaxation time. The activation energy was comparatively higher for the irradiated samples and found to be electronic conduction. From the study we observe the lower conductivity values exhibited for 300 K irradiated sample due to severe damage than the 80 K irradiated sample. The damage production mechanism and the change in electrical properties are discussed.

  19. Electronic, phononic, and thermoelectric properties of graphyne sheets

    SciTech Connect

    Sevinçli, Hâldun; Sevik, Cem

    2014-12-01

    Electron, phonon, and thermoelectric transport properties of α-, β-, γ-, and 6,6,12-graphyne sheets are compared and contrasted with those of graphene. α-, β-, and 6,6,12-graphynes, with direction dependent Dirac dispersions, have higher electronic transmittance than graphene. γ-graphyne also attains better electrical conduction than graphene except at its band gap. Vibrationally, graphene conducts heat much more efficiently than graphynes, a behavior beyond an atomic density differences explanation. Seebeck coefficients of the considered Dirac materials are similar but thermoelectric power factors decrease with increasing effective speeds of light. γ-graphyne yields the highest thermoelectric efficiency with a thermoelectric figure of merit as high as ZT = 0.45, almost an order of magnitude higher than that of graphene.

  20. Tuning Thermoelectric Properties of Chirality Selected Single Wall Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Yanagi, Kazuhiro; Oshima, Yuki; Kitamura, Yoshimasa; Maniwa, Yutaka

    Thermoelectrics are a very important technology for efficiently converting waste heat into electric power. Hicks and Dresselhaus proposed an important approach to innovate the performance of thermoelectric devices, which involves using one-dimensional materials and properly tuning their Fermi level (PRB 1993). Therefore, understanding the relationship between the thermoelectric performance and the Fermi level of one-dimensional materials is of great importance to maximize their thermoelectric performance. Single wall carbon nanotube (SWCNT) is an ideal model for one-dimensional materials. Previously we reported continuous p-type and n-type control over the Seebeck coefficients of semiconducting SWCNT networks with diameter of 1.4 nm through an electric double layer transistor setup using an ionic liquid as the electrolyte (Yanagi et al., Nano Lett. 14, 6437 2014). We clarified the thermoelectric properties of semiconducting SWCNTs with diameter of 1.4 nm as a function of Fermi level. In this study, we investigated how the chiralities or electronic structures of SWCNTs influence on the thermoelectric properties. We found the significant difference in the line-shape of Seebeck coefficient as a function of gate voltage between the different electronic structures of SWCNTs.

  1. Dose dependence of mechanical properties in tantalum and tantalum alloys after low temperature irradiation

    SciTech Connect

    Byun, Thak Sang

    2008-01-01

    The dose dependence of mechanical properties was investigated for tantalum and tantalum alloys after low temperature irradiation. Miniature tensile specimens of three pure tantalum metals, ISIS Ta, Aesar Ta1, Aesar Ta2, and one tantalum alloy, Ta-1W, were irradiated by neutrons in the High Flux Isotope Reactor (HFIR) at ORNL to doses ranging from 0.00004 to 0.14 displacements per atom (dpa) in the temperature range 60 C 100 oC. Also, two tantalum-tungsten alloys, Ta-1W and Ta-10W, were irradiated by protons and spallation neutrons in the LANSCE facility at LANL to doses ranging from 0.7 to 7.5 dpa and from 0.7 to 25.2 dpa, respectively, in the temperature range 50 C 160 oC. Tensile tests were performed at room temperature and at 250oC at nominal strain rates of about 10-3 s-1. All neutron-irradiated materials underwent progressive irradiation hardening and loss of ductility with increasing dose. The ISIS Ta experienced embrittlement at 0.14 dpa, while the other metals retained significant necking ductility. Such a premature embrittlement in ISIS Ta is believed to be because of high initial oxygen concentrations picked up during a pre-irradiation anneal. The Ta-1W and Ta-10W specimens irradiated in spallation condition experienced prompt necking at yield since irradiation doses for those specimens were high ( 0.7 dpa). At the highest dose, 25.2 dpa, the Ta-10W alloy specimen broke with little necking strain. Among the test materials, the Ta-1W alloy displayed the best combination of strength and ductility. The plastic instability stress and true fracture stress were nearly independent of dose. Increasing test temperature decreased strength and delayed the onset of necking at yield.

  2. Thermoelectric Properties of Bi Doped Tetrahedrite

    NASA Astrophysics Data System (ADS)

    Prem Kumar, D. S.; Chetty, R.; Femi, O. E.; Chattopadhyay, K.; Malar, P.; Mallik, R. C.

    2016-08-01

    Bi doped tetrahedrites with nominal compositions of Cu12Sb4-x Bi x S13 (x = 0, 0.2, 0.4, 0.6, 0.8) were synthesized by the solid state reaction method. Powder x-ray diffraction patterns confirmed that Cu12Sb4S13 (tetrahedrite structure) was the main phase, along with Cu3SbS4 and Cu3SbS3 as the secondary phases. Electron probe microanalysis provided the elemental composition of all the samples. It was confirmed that the main phase is the tetrahedrite phase with slight deviations in the stoichiometry. All the transport properties were measured between 423 K and 673 K. The electrical resistivity increased with an increase in Bi content for all the samples, possibly induced by the variation in the carrier concentration, which may be due to the influence of impurity phases. The increase in electrical resistivity with an increase in temperature indicates the degenerate semiconducting nature of the samples. The absolute Seebeck coefficient is positive throughout the temperature range indicating the p-type nature of the samples. The Seebeck coefficient for all the samples increased with an increase in Bi content as electrical resistivity. The variation of electrical resistivity and the Seebeck coefficient with doping can be attributed to the changes in the carrier concentration of the samples. The total thermal conductivity increases with an increase in temperature and decreases with an increase in the Bi content that could be due to the reduction in carrier thermal conductivity. The highest thermoelectric figure of merit (zT) ~0.84 at 673 K was obtained for the sample with x = 0.2 due to lower thermal conductivity (1.17 W/m K).

  3. Enhanced thermoelectric properties of graphene oxide patterned by nanoroads.

    PubMed

    Zhou, Si; Guo, Yu; Zhao, Jijun

    2016-04-21

    The thermoelectric properties of two-dimensional (2D) materials are of great interest for both fundamental science and device applications. Graphene oxide (GO), whose physical properties are highly tailorable by chemical and structural modifications, is a potential 2D thermoelectric material. In this report, we pattern nanoroads on GO sheets with epoxide functionalization, and investigate their ballistic thermoelectric transport properties based on density functional theory and the nonequilibrium Green's function method. These graphene oxide nanoroads (GONRDs) are all semiconductors with their band gaps tunable by the road width, edge orientation, and the structure of the GO matrix. These nanostructures show appreciable electrical conductance at certain doping levels and enhanced thermopower of 127-287 μV K(-1), yielding a power factor 4-22 times of the graphene value; meanwhile, the lattice thermal conductance is remarkably reduced to 15-22% of the graphene value; consequently, attaining the figure of merit of 0.05-0.75. Our theoretical results are not only helpful for understanding the thermoelectric properties of graphene and its derivatives, but also would guide the theoretical design and experimental fabrication of graphene-based thermoelectric devices of high performance.

  4. Enhanced thermoelectric properties of graphene oxide patterned by nanoroads.

    PubMed

    Zhou, Si; Guo, Yu; Zhao, Jijun

    2016-04-21

    The thermoelectric properties of two-dimensional (2D) materials are of great interest for both fundamental science and device applications. Graphene oxide (GO), whose physical properties are highly tailorable by chemical and structural modifications, is a potential 2D thermoelectric material. In this report, we pattern nanoroads on GO sheets with epoxide functionalization, and investigate their ballistic thermoelectric transport properties based on density functional theory and the nonequilibrium Green's function method. These graphene oxide nanoroads (GONRDs) are all semiconductors with their band gaps tunable by the road width, edge orientation, and the structure of the GO matrix. These nanostructures show appreciable electrical conductance at certain doping levels and enhanced thermopower of 127-287 μV K(-1), yielding a power factor 4-22 times of the graphene value; meanwhile, the lattice thermal conductance is remarkably reduced to 15-22% of the graphene value; consequently, attaining the figure of merit of 0.05-0.75. Our theoretical results are not only helpful for understanding the thermoelectric properties of graphene and its derivatives, but also would guide the theoretical design and experimental fabrication of graphene-based thermoelectric devices of high performance. PMID:27035740

  5. Thermoelectric Properties of Nanowires with a Graphitic Shell.

    PubMed

    Lee, Jong Woon; Lee, Eun Kyung; Kim, Byung Sung; Lee, Jae Hyun; Kim, Hee Goo; Jang, Hyeon Sik; Hwang, Sung Woo; Choi, Byoung Lyong; Whang, Dongmok

    2015-07-20

    A thermoelectric device that can generate electricity from waste heat can play an important role in a global energy solution. However, the strongly correlated thermoelectric properties have remained a major hurdle for the highly efficient conversion of thermoelectric energy. Herein, the electrical and thermal properties of Si and SiO2 nanowires with few-layer graphitic shells are demonstrated; these structures exhibit enhanced electrical properties but no increase in thermal conductivity. The main path of the phonons through the structures is the core nanowire, which has a large cross-sectional area relative to that of the graphitic shell layer. However, the electrical conductivities of the nanowires with shell structures are high because of the good electrical conductivity of the graphitic shell, despite its small cross-sectional area. PMID:25939904

  6. Thermoelectric properties of hole- and electron-doped ambipolar polymers

    NASA Astrophysics Data System (ADS)

    Glaudell, Anne; Perry, Erin; Schlitz, Ruth; Chabinyc, Michael

    2015-03-01

    The library of possible materials, both p- and n-type, for organic thermoelectric devices has been steadily growing with the continuous improvement in electrical properties and stability. Maximizing the thermoelectric power factor in these materials requires the simultaneous optimization of both electrical conductivity and thermopower. The challenge remains that charge transport is not well understood in organic materials due to energetic disorder from crystalline and non-crystalline domains. We have performed temperature-dependent measurements of both thermopower and electrical conductivity to uncover the relationship between microstructure and thermoelectric performance. These measurements were complemented by techniques such as electronic paramagnetic resonance (EPR) that help provide the carrier concentration to give a more complete picture of the competing charge transport mechanisms and structure-property relationships. We will present results on p- and n-type doping of ambipolar polymers that reveal the difference in thermopower for electrons and holes in the same material. An ideal thermoelectric device has n- and p-type legs with similar mechanical and thermoelectric properties, a balance more easily realized using the same polymer for each leg.

  7. The structure and magnetic properties of Sm-Fe-N powders prepared by ball milling at low temperature

    NASA Astrophysics Data System (ADS)

    Fang, Qiuli; An, Xiaoxin; Wang, Fang; Li, Ying; Du, Juan; Xia, Weixing; Yan, Aru; Liu, J. Ping; Zhang, Jian

    2016-07-01

    Sm-Fe-N powders have great potential to be used for preparing high-performance bonded permanent magnets because of their high anisotropy field and large saturation magnetization. In this work, we report the morphology, structure, oxygen content and magnetic properties of the Sm-Fe-N powders prepared by high energy ball milling at low temperature. Compared with the samples milled at room temperature, the Sm-Fe-N powders prepared at low temperature display more homogeneous morphology, less decomposition, lower oxygen content, and therefore enhanced magnetic performance. Our experimental results indicate that the low temperature milling will be a promising method for fabricating Sm-Fe-N bonded magnets with high-performance.

  8. Mechanical Property of a New Zr-BASED Bulk Metallic Glass with Certain Plasticity at Low Temperature

    NASA Astrophysics Data System (ADS)

    Sun, Yajuan; Qu, Dongdong; Shen, Jun; Huang, Yongjiang; Wei, Xianshun

    The mechanical property of a new bulk metallic glass Zr50.7Cu28Ni9Al12.3, which owns 5% room-temperature plasticity, is investigated at low temperatures 193K and 123K. It is indicated that the yield strength and the plasticity significantly increase by 12.8% and 50% respectively as testing temperature is lowered from 298K (at room temperature) to 123K (in liquid nitrogen). The dense and multiple shear bands which contribute to the improved ductility are observed on the side surface of these samples fractured at low-temperature. Detailed study of the stress-strain curves for the samples deformed at low temperature show that more serrations and smaller stress drop form due to generation of more much shear bands.

  9. Low temperature magnetic properties of monoclinic pyrrhotite with particular relevance to the Besnus transition

    NASA Astrophysics Data System (ADS)

    Volk, Michael W. R.; Gilder, Stuart A.; Feinberg, Joshua M.

    2016-10-01

    150 K in pseudo-single domain pyrrhotite. As pseudo-single domain monoclinic pyrrhotite carries the magnetic remanence in some meteorites, it is likely that low temperature cycling in space then warming to ambient conditions at the Earth's surface will have only a minor influence on paleointensity values derived from those meteorites.

  10. Thermoelectric Properties of Polycrystalline n-Type Pb5Bi6Se14

    NASA Astrophysics Data System (ADS)

    Sassi, S.; Candolfi, C.; Ohorodniichuk, V.; Gendarme, C.; Masschelein, P.; Dauscher, A.; Lenoir, B.

    2016-10-01

    Chalcogenides are currently receiving attention due to their interesting thermoelectric properties that stem from their complex crystal structures and semiconducting properties. Here, we report on the synthesis and measurements of the transport properties in a broad temperature range (2-723 K) of polycrystalline n-type Pb5Bi6Se14, a member of the homologous series (PbSe)5(Bi2Se3)3m (m = 1), to assess its thermoelectric potential and to shed light on the basic mechanisms governing the low-temperature transport. The anisotropic crystal structure gives rise to transport properties that differ on samples measured parallel or perpendicular to the pressing direction. The measurements show that this compound exhibits semiconducting-like properties with thermopower values that reach 250 μV K-1 at 723 K. The lattice thermal conductivity values are very low in the whole temperature range (˜0.5 W m-1 K-1) and close to the theoretical minimum thermal conductivity estimated from sound velocities. Thanks to this remarkable property, a peak ZT of 0.5 is achieved at 720 K.

  11. Low-temperature sintering of silica-boric acid-doped willemite and microwave dielectric properties

    NASA Astrophysics Data System (ADS)

    Ando, Minato; Ohsato, Hitoshi; Igimi, Daisuke; Higashida, Yutaka; Kan, Akinori; Suzuki, Sadahiko; Yasufuku, Yoshitoyo; Kagomiya, Isao

    2015-10-01

    Millimeter-wave wireless communications in a high-level information society have been expanding in terms of high-density data transfer and radar for pre-crash safety systems. For these communications, millimeter-wave dielectrics have been expected for the development of substrates with high quality factor (Qf), low dielectric constant (ɛr), and near-zero temperature coefficient of resonance frequency (TCf). We have been studying several silicates such as forsterite, willemite, diopside, wollastonite, and cordierite/indialite glass ceramics. In this study, the synthesis of willemite and low-temperature-sintered willemite for low temperature co-fired ceramics (LTCC) is examined. The raw materials used for preparing slurries in doctor blade tape casting are also analyzed.

  12. Electrical Transport of Topological Insulator-bismuth selenide and Thermoelectric Properties of Graphene

    NASA Astrophysics Data System (ADS)

    Wei, Peng

    2011-12-01

    This thesis summarizes our work in the past four years in the field of transport studies of the topological insulator materials and thermoelectric properties of graphene. The first half of the thesis is focused on the transport properties of topological insulator material-Bi2Se3. In our research, we systematically tune the position of the chemical potential in p-type Ca-doped Bi2Se3 thin devices first by eliminating excess holes with controlled post-fabrication electron beam irradiation that results in an insulating bulk state. In spite of the fact that the energetic electron beam creates defects to localize the bulk carriers and inevitably to cause additional scattering, we find a tenfold increase in carrier mobility associated with the extended states in the band gap. In addition, the resistance undergoes a fivefold increase and passes the maximum as the chemical potential is further tuned by electrostatic gating. A cusp-like low-field magnetoresistance feature also emerges which is indicative of strong spin-orbit interaction. The observed gate-tunable high-mobility is a signature of massless Dirac fermions in the band gap of Bi2Se3. The second half of this thesis is focused on graphene. Our work first reported the thermoelectric study of graphene and demonstrated the anomalous thermoelectric transport of massless Dirac fermions. As a direct consequence of the linear dispersion of massless particles, we find that the Seebeck coefficient Sxx diverges with 1/n2D , where n2D is the carrier density. We observe a very large Nernst signal Sxy (˜ 50 muV/K at 8 T) at the Dirac point, and an oscillatory dependence of both Sxx and Sxy on n 2D at low temperatures. Our results underscore the anomalous thermoelectric transport in graphene, which may be used as a highly sensitive probe for impurity bands near the Dirac point.

  13. Effective material properties of thermoelectric composites with elliptical fibers

    NASA Astrophysics Data System (ADS)

    Wang, Yi-Ze

    2015-06-01

    In the present work, the effective material properties of thermoelectric composites with elliptical fibers are studied. Explicit solutions are derived by the conformal mapping function and Mori-Tanaka method. Numerical simulations are performed to present the behaviors of normalized effective material constants. From the results, it can be observed that both the effective electric and thermal conductivities can be reduced by increasing the filling ratio and a/ b. Such influences can also be found for the effective thermoelectric figure of merit. But they are different from those on the effective Seebeck and Peltier coefficients.

  14. Low-Temperature Magnetic and Thermal Properties of Some Low-Dimensional Compounds

    NASA Astrophysics Data System (ADS)

    Lukin, Jonathan Allen

    Heat capacity and A.C. susceptibility measurements of powdered alpha-rm MnC_2O_4cdot2H_2O have led to its description as a Heisenberg chain antiferromagnet with exchange J/k = -1.17(2) K. Anomalies in C_{p} signal the onset of long-range order at T_{N} = 2.4 K and an order-order transition at T_2 = 1.5 K. For T_2low-temperature C_{p}. From EPR spectra of doped alpha- rm ZnC_2O_4cdot2H_2O crystals, the properties of isolated Mn ^{2+}, Cu^{2+ }, and Co^{2+} ions in this lattice were deduced. The powder susceptibility and heat capacity of alpha- rm CoC_2O_4cdot2H_2O delineate a 2D Ising antiferromagnet with J/k = -30+/- 2 K, | J^'/J |~ 3times 10^{-3}, and an ordering temperature T_{N }=6.23(2) K. The measured susceptibility above 20 K of alpha-rm NiC _2O_4cdot2H_2O agrees with that of a spin-1 Heisenberg chain with J/k = -19.5+/- 1 K; a peak in C_{p } indicates magnetic ordering at T _{N} = 6.33(2) K. X-ray diffraction, heat capacity, and magnetic susceptibility measurements of rm ErBa_2Cu _3O_{x} with 6.12 <= x<=6.91 revealed several effects correlated with the oxygen concentration x. The fully -oxygenated orthorhombic material, with a superconducting transition temperature T_{c} = 92 K, exhibits a 2D Ising-like peak corresponding to magnetic ordering of the Er^{3+} moments at T_{m} = 0.604 K. Removal of oxygen reduces the lattice orthorhombicity and depresses both T_{c} and T_{m}, until in the 2 = 6.12, 6.23 tetragonal phases superconductivity and long-range magnetic order are quenched. These

  15. Phase transformation and thermoelectric properties of bismuth-telluride nanowires.

    PubMed

    Hsin, Cheng-Lun; Wingert, Matthew; Huang, Chun-Wei; Guo, Hua; Shih, Ten-Jen; Suh, Joonki; Wang, Kevin; Wu, Junqiao; Wu, Wen-Wei; Chen, Renkun

    2013-06-01

    Thermoelectric materials have attracted much attention due to the current interest in energy conversion and recent advancements in nano-engineering. A simple approach to synthesize BiTe and Bi2Te3 micro/nanowires was developed by combining solution chemistry reactions and catalyst-free vapor-solid growth. A pathway to transform the as-grown BiTe nanostructures into Bi2Te3 can be identified through the Bi-Te phase diagram. Structural characterization of these products was identified using standard microscopy practices. Meanwhile, thermoelectric properties of individual Bi-Te compound micro/nanowires were determined by the suspended microdevice technique. This approach provides an applicable route to synthesize advanced high performance thermoelectric materials in quantities and can be used for a wide range of low-dimensional structures. PMID:23619552

  16. Low-temperature thermal and elastoacoustic properties of butanol glasses: Study of position isomerism effects around the boson peak

    NASA Astrophysics Data System (ADS)

    Hassaine, Merzak; Ramos, Miguel A.; Krivchikov, A. I.; Sharapova, I. V.; Korolyuk, O. A.; Jiménez-Riobóo, Rafael J.

    2012-03-01

    We have concurrently measured the specific heat, the thermal conductivity, and the longitudinal and transverse sound velocities at low temperature of glasses from different isomers of butanol (n-butanol, sec-butanol and isobutanol), as well as the low-temperature specific heat for the crystals of n-butanol, isobutanol and tert-butanol. Whereas the elastic constants both for crystals and glasses are found to be almost independent of the position of the hydrogen bonds, the thermal properties at low temperatures of these glasses at a few kelvin (around the boson peak in the reduced specific heat or around the plateau in the thermal conductivity) are found to vary strongly. Our experiments clearly contradict other works or models claiming a Debye scaling of the boson peak, and hence of the excess low-temperature specific heat of glasses. Data analysis based upon the soft-potential model and its extensions allows us to estimate the Ioffe-Regel limit in these and other alcohol glasses, finding a correlation with the boson-peak position in agreement with that previously reported by other groups.

  17. Phase transformation and thermoelectric properties of bismuth-telluride nanowires

    NASA Astrophysics Data System (ADS)

    Hsin, Cheng-Lun; Wingert, Matthew; Huang, Chun-Wei; Guo, Hua; Shih, Ten-Jen; Suh, Joonki; Wang, Kevin; Wu, Junqiao; Wu, Wen-Wei; Chen, Renkun

    2013-05-01

    Thermoelectric materials have attracted much attention due to the current interest in energy conversion and recent advancements in nano-engineering. A simple approach to synthesize BiTe and Bi2Te3 micro/nanowires was developed by combining solution chemistry reactions and catalyst-free vapor-solid growth. A pathway to transform the as-grown BiTe nanostructures into Bi2Te3 can be identified through the Bi-Te phase diagram. Structural characterization of these products was identified using standard microscopy practices. Meanwhile, thermoelectric properties of individual Bi-Te compound micro/nanowires were determined by the suspended microdevice technique. This approach provides an applicable route to synthesize advanced high performance thermoelectric materials in quantities and can be used for a wide range of low-dimensional structures.Thermoelectric materials have attracted much attention due to the current interest in energy conversion and recent advancements in nano-engineering. A simple approach to synthesize BiTe and Bi2Te3 micro/nanowires was developed by combining solution chemistry reactions and catalyst-free vapor-solid growth. A pathway to transform the as-grown BiTe nanostructures into Bi2Te3 can be identified through the Bi-Te phase diagram. Structural characterization of these products was identified using standard microscopy practices. Meanwhile, thermoelectric properties of individual Bi-Te compound micro/nanowires were determined by the suspended microdevice technique. This approach provides an applicable route to synthesize advanced high performance thermoelectric materials in quantities and can be used for a wide range of low-dimensional structures. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr00876b

  18. Structural homogeneity of nanocrystalline VT1-0 titanium. Low-temperature micromechanical properties

    NASA Astrophysics Data System (ADS)

    Rusakova, A. V.; Lubenets, S. V.; Fomenko, L. S.; Moskalenko, V. A.

    2012-10-01

    The microhardness of samples of VT1-0 titanium with grain sizes ranging from 35 nm to 10 μm is measured at temperatures of 77-300 K. Nanocrystalline samples produced by rolling at low temperatures are found to be quite homogeneous, and their structure is stable with respect to thermal and mechanical interactions. The interrelationship between microhardness and grain size is well described by the Hall-Petch relationship, the parameters of which depend on temperature. Data on the temperature dependence of the microhardness and the Hall-Petch coefficient indicate that the microplastic deformation is of a thermally activated, dislocation character, regardless of grain size.

  19. Low Temperature Properties for Correlation Functions in Classical N-Vector Spin Models

    NASA Astrophysics Data System (ADS)

    Balaban, Tadeusz; O'Carroll, Michael

    We obtain convergent multi-scale expansions for the one-and two-point correlation functions of the low temperature lattice classical N- vector spin model in d>= 3 dimensions, N>= 2. The Gibbs factor is taken as where , , , are large and 0 < v<= 1. In the thermodynamic and limits, with h=e1, and Δ≡∂*∂, the expansion gives (spontaneous magnetization), , (Goldstone Bosons), , and , where , for some ρ > 0, and c0 is aprecisely determined constant.

  20. Thermoelectric Properties of Barium Plumbate Doped by Alkaline Earth Oxides

    NASA Astrophysics Data System (ADS)

    Eufrasio, Andreza; Bhatta, Rudra; Pegg, Ian; Dutta, Biprodas

    Ceramic oxides are now being considered as a new class of thermoelectric materials because of their high stability at elevated temperatures. Such materials are especially suitable for use as prospective thermoelectric power generators because high temperatures are encountered in such operations. The present investigation uses barium plumbate (BaPbO3) as the starting material, the thermoelectric properties of which have been altered by judicious cation substitutions. BaPbO3 is known to exhibit metallic properties which may turn semiconducting as a result of compositional changes without precipitating a separate phase and/or altering the basic perovskite crystal structure. Perovskite structures are noted for their large interstitial spaces which can accommodate a large variety of ``impurity'' ions. As BaPbO3 has high electrical conductivity, σ = 2.43x105Ω-1 m-1 at room temperature, its thermopower, S, is relatively low, 23 μV/K, as expected. With a thermal conductivity, k, of 4.83Wm-1K-1, the figure of merit (ZT =S2 σ Tk-1) of BaPbO3 is only 0.01 at T = 300K. The objective of this investigation is to study the variation of thermoelectric properties of BaPbO3 as Ba and Pb ions are systematically substituted by alkaline earth ions.

  1. Low Temperature Properties and Quantum Criticality of CrAs1-x Px single crystal

    NASA Astrophysics Data System (ADS)

    Luo, Jianlin; Institute of Physics, Chinese Academy of Sciences Team

    We report a systematically study of resistivity and specific heat on phosphorus doped CrAs1-xPx single crystals with x =0 to 0.2. With the increasing of phosphorus doping concentration x, the magnetic and structural transition temperature TN is suppressed. Non-fermi liquid behavior and quantum criticality phenomenon are observed from low temperature resistivity around critical doping with xc ~0.05 where the long-range antiferromagnetic ordering is completely suppressed. The low temperature specific heat of CrAs1-xPx is contributed by the thermal excitation of phonons and electrons. The electronic specific heat coefficient γ, which reflects the effective mass of quasi-particles, shows maximum around xc ~0.05, also indicating the existence of quantum critical phenomenon around the critical doping. The value of Kadowaki-Woods ratio of CrAs1-xPx shows no significant different from that of CrAs. Work is done in collaboration with Fukun Lin, Wei Wu, Ping Zheng, Guozhi Fan, Jinguang Cheng.

  2. Thermoelectric properties of single-layered SnSe sheet.

    PubMed

    Wang, Fancy Qian; Zhang, Shunhong; Yu, Jiabing; Wang, Qian

    2015-10-14

    Motivated by the recent study of inspiring thermoelectric properties in bulk SnSe [Zhao et al., Nature, 2014, 508, 373] and the experimental synthesis of SnSe sheets [Chen et al., J. Am. Chem. Soc., 2013, 135, 1213], we have carried out systematic calculations for a single-layered SnSe sheet focusing on its stability, electronic structure and thermoelectric properties by using density functional theory combined with Boltzmann transport theory. We have found that the sheet is dynamically and thermally stable with a band gap of 1.28 eV, and the figure of merit (ZT) reaches 3.27 (2.76) along the armchair (zigzag) direction with optimal n-type carrier concentration, which is enhanced nearly 7 times compared to its bulk counterpart at 700 K due to quantum confinement effect. Furthermore, we designed four types of thermoelectric couples by assembling single-layered SnSe sheets with different transport directions and doping types, and found that their efficiencies are all above 13%, which are higher than those of thermoelectric couples made of commercial bulk Bi2Te3 (7%-8%), suggesting the great potential of single-layered SnSe sheets for heat-electricity conversion.

  3. Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

    SciTech Connect

    Demaurex, Bénédicte; Bartlome, Richard; Seif, Johannes P.; Geissbühler, Jonas; Alexander, Duncan T. L.; Jeangros, Quentin; Ballif, Christophe; De Wolf, Stefaan

    2014-08-05

    Low-temperature (≤ 180 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-ehanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems not only from the growth conditions but also from unintentional contamination of the reactor. As a result of our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.

  4. Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

    SciTech Connect

    Demaurex, Bénédicte Bartlome, Richard; Seif, Johannes P.; Geissbühler, Jonas; Ballif, Christophe; De Wolf, Stefaan; Alexander, Duncan T. L.; Jeangros, Quentin

    2014-08-07

    Low-temperature (≤200 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-enhanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems not only from the growth conditions but also from unintentional contamination of the reactor. Based on our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.

  5. Tensile and impact properties of vanadium-base alloys irradiated at low temperatures in the ATR-A1 experiment

    SciTech Connect

    Tsai, H.; Nowicki, L.J.; Billone, M.C.; Chung, H.M.; Smith, D.L.

    1998-03-01

    Subsize tensile and Charpy specimens made from several V-(4-5)Cr-(4-5)Ti alloys were irradiated in the ATR-A1 experiment to study the effects of low-temperature irradiation on mechanical properties. These specimens were contained in lithium-bonded subcapsules and irradiated at temperatures between {approx}200 and 300 C. Peak neutron damage was {approx}4.7 dpa. Postirradiation testing of these specimens has begun. Preliminary results from a limited number of specimens indicate a significant loss of work-hardening capability and dynamic toughness due to the irradiation. These results are consistent with data from previous low-temperature neutron irradiation experiments on these alloys.

  6. Thermoelectric properties of pressed bismuth nanoparticles

    NASA Astrophysics Data System (ADS)

    Hostler, Stephen R.; Qu, Yu Qiao; Demko, Michael T.; Abramson, Alexis R.; Qiu, Xiaofeng; Burda, Clemens

    2008-03-01

    Theory predicts a substantial increase in the dimensionless figure of merit as the dimensionality and characteristic size of a material are decreased. We explore the use of bismuth nanoparticles pressed into pellets as potential increased efficiency thermoelectric materials. The figure of merit of these pellets is determined by independently measuring the electrical conductivity, thermal conductivity and Seebeck coefficient. The results from the nanoparticle sample are compared to microparticle-based samples. Both sample types show a slight reduction in thermal conductivity relative to bulk bismuth and a Seebeck coefficient near or slightly larger in magnitude than bulk bismuth. These changes are dwarfed by a hundred-fold decrease in the electrical conductivity due to porosity and an oxide layer on the particles. The low conductivity leads to figures of merit at least two orders of magnitude smaller than bulk bismuth. Oxide layer removal and reduced pellet porosity will be required to increase the figure of merit.

  7. Enhanced Thermoelectric Properties of W- and Fe-Substituted MnSi γ

    NASA Astrophysics Data System (ADS)

    Ghodke, Swapnil; Hiroishi, Naoya; Yamamoto, Akio; Ikuta, Hiroshi; Matsunami, Masaharu; Takeuchi, Tsunehiro

    2016-06-01

    We have investigated the effect of heavy-element (W) substitution on the thermoelectric properties of higher manganese silicide (HMS). Samples were prepared by arc melting followed by liquid quenching, where the latter assisted in achieving higher solubility for tungsten. We observed that Mn34.6W1.8Si63.6 was a p-type material, whereas simultaneous substitution of 12 at.% Fe made the higher manganese silicide an n-type material. The optimal carrier concentration was obtained by simultaneous substitution of Fe and W for Mn atoms. Although the samples were metastable, we successfully obtained bulk samples by a low-temperature (970 K), high-pressure (>100 MPa), long-duration sintering process. The lattice thermal conductivity was effectively reduced by W substitution, and the ZT value was improved to above 0.5 for both n- and p-type samples.

  8. Thermoelectric properties of bulk MoSi2 synthesized by solid state microwave heating

    NASA Astrophysics Data System (ADS)

    Lan, Yu; Xie, Mianyu; Ouyang, Ting; Yue, Song

    2016-07-01

    In this research, single phase α-MoSi2 was prepared by solid state hybrid microwave heating within 90 min at relatively low temperature 1273 K. Such precursor powders were then ball milled and sintered by microwave heating at different temperatures. The thermoelectric (TE) properties of MoSi2 bulks were investigated in the temperature range of 300-673 K. When the sintering temperature increases from 973 K to 1273 K, the electrical resistivity decreases significantly and the Seebeck coefficients increase obviously, leading to the maximum TE powder factor of 6.2 × 10-6Wm-1K-2 at 673 K. These results demonstrate the feasibility of high efficient and economical synthesis of MoSi2 by microwave heating technique, with the final products having comparable TE performance in comparison to those from typical methods with long duration and energy-extensive consumption.

  9. Enhanced Thermoelectric Properties of W- and Fe-Substituted MnSi γ

    NASA Astrophysics Data System (ADS)

    Ghodke, Swapnil; Hiroishi, Naoya; Yamamoto, Akio; Ikuta, Hiroshi; Matsunami, Masaharu; Takeuchi, Tsunehiro

    2016-10-01

    We have investigated the effect of heavy-element (W) substitution on the thermoelectric properties of higher manganese silicide (HMS). Samples were prepared by arc melting followed by liquid quenching, where the latter assisted in achieving higher solubility for tungsten. We observed that Mn34.6W1.8Si63.6 was a p-type material, whereas simultaneous substitution of 12 at.% Fe made the higher manganese silicide an n-type material. The optimal carrier concentration was obtained by simultaneous substitution of Fe and W for Mn atoms. Although the samples were metastable, we successfully obtained bulk samples by a low-temperature (970 K), high-pressure (>100 MPa), long-duration sintering process. The lattice thermal conductivity was effectively reduced by W substitution, and the ZT value was improved to above 0.5 for both n- and p-type samples.

  10. Influence of high pressure hydrogen environment on tensile and fatigue properties of stainless steels at low temperatures

    NASA Astrophysics Data System (ADS)

    Ogata, T.

    2012-06-01

    Hydrogen environment embrittlement (HEE) of stainless steels in the environment of high pressure and low temperature hydrogen gas was evaluated using a very simple mechanical properties testing procedure. In the method, the high-pressure hydrogen environment is produced just inside the hole in the specimen. In this work, the effects of HEE on fatigue properties for austenitic stainless steels SUS304L and SUS316L were evaluated at 298 and 190 K. The effects of HEE on the tensile properties of higher strength stainless steels, such as strain-hardened 316, SUS630, and other alloys, SUH660 and Alloy 718 were also examined. The less effect of HEE on fatigue properties of SUS316L and tensile properties of strain-hardened 316 were observed compared with SUS304L and other steels at room temperature and 190 K.

  11. Biodiesel production by combined fatty acids separation and subsequently enzymatic esterification to improve the low temperature properties.

    PubMed

    Wang, Meng; Nie, Kaili; Cao, Hao; Deng, Li; Wang, Fang; Tan, Tianwei

    2014-12-01

    The poor low-temperature properties of biodiesel, which provokes easy crystallization at low temperature, can cause fuel line plugging and limits its blending amount with petro-diesel. This work aimed to study the production of biodiesel with a new process of improving the low temperature performance of biodiesel. Waste cooking oil was first hydrolyzed into fatty acids (FAs) by 60g immobilized lipase and 240g RO water in 15h. Then, urea complexation was used to divide the FAs into saturated and unsaturated components. The conditions for complexation were: FA-to-urea ratio 1:2 (w/w), methanol to FA ratio 5:1 (v/v), duration 2h. The saturated and unsaturated FAs were then converted to iso-propyl and methyl esters by lipase, respectively. Finally, the esters were mixed together. The CFPP of this mixture was decreased from 5°C to -3°C. Hydrolysis, urea complexation and enzymic catalyzed esterification processes are discussed in this paper. PMID:25441717

  12. Experimental Investigation on Mechanical Property of Metal Rubber Used in Lunar Rover at High or Low Temperature

    NASA Astrophysics Data System (ADS)

    Tao, J.; Deng, Z.; Gao, H.; Wang, S.; Hu, M.; Meng, X.

    Metal rubber is a kind of elastic damping material for aerospace environment It can keep its capacity even in some extreme environment such as high temperature high pressure high vacuum ultra-low temperature and violent vibration where traditional rubber can t deal with so it can be used in space craft as vibration reduction filter element and sealing element On the prototype of a lunar rover developed by Harbin Institute of Technology metal rubber is firstly used for the vibration dampers in the rover wheels In this paper the experimental investigation on rigidity and damping characteristic of metal rubber is carried out at high temperature and ultra-low temperature that corresponds to lunar environment The quasi-statics property of the samples made of metal rubber is tested at desired temperatures by the universal tensile testing machine model Y-71 The low temperatures down to -175° were realized by liquid nitrogen and the high temperatures up to 130° were realized by flexible electrical heater band Based on the method of least squares some curves to curve fit the experimental data on rigidity of the metal rubber samples at simulated temperatures to lunar environment were given The damping ratios of metal rubber at ordinary temperatures have been mentioned in some documents But there are hardly any reports about them at simulated temperatures to lunar environment Because it is difficult to know directly the exact damping mechanism of the metal rubber the free attenuation method is feasible to test its damping

  13. Extremely low-temperature properties of silicone compound used for thermal coupling in cryostat of SWIR/ASTER on TERRA

    NASA Astrophysics Data System (ADS)

    Kobayashi, Minoru; Akao, Hiroshi; Akagi, Shigeki; Kikuchi, Masakuni; Tatsumi, Kenji; Kawada, Masakuni

    2014-07-01

    The SWIR(Short Wave-length Infrared Radiometer) is one of the optical sensors in ASTER(Advanced Space-borne Thermal Emission and Reflection Radiometer). ASTER is installed in the EOS(Earth Observing System) TERRA spacecraft of NASA. TERRA was launched on December18, 1999, and is employed still on the orbit for 14 years in January, 2014, The detector of SWIR is cooled at temperature 77K by cryocooler with the optimum sensitivity. SWIR had continued to take the numerous image data for more than five years of the mission period on orbit, and the cryocooler is still operating normally. However, a gradual rise in temperature of the detector has been seen after launch. Silicone compound have been used in order to achieve heat transfer between the detector and the cryocooler. On investigation, we have found that thermal conductivity of the silicone compound has been gradually reduced. We evaluated the low temperature properties (such as thermal conductivity, strength etc.) of the silicone compound. In addition, we analyzed the temperature conditions and the thermal stress values of cryostat in the orbit. As a result, the silicone compound solidified at low temperature shows a behavior similar to adhesive. Depending on the thermal stress generated at a low temperature, there is a possibility that destruction such as peeling occurs.

  14. Change in the magnetic properties of nanoferrihydrite with an increase in the volume of nanoparticles during low-temperature annealing

    NASA Astrophysics Data System (ADS)

    Balaev, D. A.; Krasikov, A. A.; Stolyar, S. V.; Iskhakov, R. S.; Ladygina, V. P.; Yaroslavtsev, R. N.; Bayukov, O. A.; Vorotynov, A. M.; Volochaev, M. N.; Dubrovskiy, A. A.

    2016-09-01

    The results of the investigation into the effect of low-temperature annealing of a powder of nanoparticles of bacterial ferrihydrite on its magnetic properties have been presented. It has been found that an increase in the time (up to 240 h) and temperature (in the range from 150 to 200°C) of annealing leads to a monotonic increase in the superparamagnetic blocking temperature, the coercive force, and the threshold field of the opening of the magnetic hysteresis loop (at liquid-helium temperatures), as well as to an increase in the magnetic resonance line width at low temperatures and in the magnetic susceptibility at room temperature. At the same time, according to the results of the analysis of the Mössbauer spectra, the annealing of ferrihydrite does not lead to the formation of new iron oxide phases. Most of these features are well consistent with the fact that the low-temperature annealing of ferrihydrite causes an increase in the size of nanoparticles, which is confirmed by the results of transmission electron microscopy studies.

  15. A high-throughput thermoelectric power-factor screening tool for rapid construction of thermoelectric property diagrams

    NASA Astrophysics Data System (ADS)

    Otani, M.; Lowhorn, N. D.; Schenck, P. K.; Wong-Ng, W.; Green, M. L.; Itaka, K.; Koinuma, H.

    2007-09-01

    The authors have developed a high-throughput screening tool that maps out thermoelectric power factors of combinatorial composition-spread film libraries. The screening tool allows one to measure the electrical conductivity and Seebeck coefficient of over 1000 sample points within 6h. Seebeck coefficients of standard films measured with the screening tool are in good agreement with those measured by traditional thermoelectric measurement apparatus. The rapid construction of thermoelectric property diagrams is illustrated for two systems: (Zn, Al)-O binary composition-spread film on Al2O3 (0001) and (Ca,Sr,La)3Co4O9 ternary composition-spread film on Si (100).

  16. Structural, ferroelectric and piezoelectric properties of chemically processed, low temperature sintered piezoelectric BZT-BCT ceramics

    NASA Astrophysics Data System (ADS)

    Roy, Subir; Maharana, Rajalaxmi; Rangaswamy Reddy, S.; Singh, Sarabjit; Kumar, Pawan; Karthik, T.; Asthana, Saket; Bhanu Prasad, V. V.; Kamat, S. V.

    2016-03-01

    0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3TiO3) nanopowders were synthesized at very low temperature using a soft chemical approach. The synthesized powders and the consolidated disks were structurally characterized thoroughly by XRD, SEM, TEM and EPMA and also by ultraviolet and Raman spectroscopy. The 1350 °C sintered BZT-BCT disk displayed the highest density, underwent diffused phase transition centered at ˜100 °C and showed the highest dielectric constant (8917) and lowest dielectric loss (0.015). The sintered BZT-BCT sample with the highest density showed a maximum polarization (P max) of 13 μC cm-2 and remnant polarization of 6 μC cm-2. The same sample exhibited very high electrostrain of ˜0.12% under a relatively low electrical field of 3.5 kV mm-1.

  17. Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

    DOE PAGES

    Demaurex, Bénédicte; Bartlome, Richard; Seif, Johannes P.; Geissbühler, Jonas; Alexander, Duncan T. L.; Jeangros, Quentin; Ballif, Christophe; De Wolf, Stefaan

    2014-08-05

    Low-temperature (≤ 180 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-ehanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems notmore » only from the growth conditions but also from unintentional contamination of the reactor. As a result of our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.« less

  18. MgO:Eu3+ red nanophosphor: low temperature synthesis and photoluminescence properties.

    PubMed

    Devaraja, P B; Avadhani, D N; Prashantha, S C; Nagabhushana, H; Sharma, S C; Nagabhushana, B M; Nagaswarupa, H P; Premkumar, H B

    2014-01-01

    Nanoparticles of Eu(3+) doped (0-9 mol%) MgO were prepared using low temperature (400°C) solution combustion technique with metal nitrate as precursor and glycine as fuel. The powder X-ray diffraction (PXRD) patterns of the as-formed products show single cubic phase and no further calcination was required. The crystallite size was obtained using Scherer's formula and was found to be 5-6 nm. The effect of Eu(3+) ions on luminescence characteristics of MgO was studied and the results were discussed in detail. These phosphors exhibit bright red emission upon 395 nm excitation. The characteristic photoluminescence (PL) emission peaks at ∼580, 596, 616, 653, 696 and 706 nm ((5)D0→(7)Fj=0, 1, 2, 3, 4) were recorded due to Eu(3+) ions. The electronic transition corresponding to (5)D0→(7)F2 of Eu(3+) ions (616 nm) was stronger than the magnetic dipole transition corresponding to (5)D0→(7)F1 of Eu(3+) ions (596 nm). The international commission on illumination (CIE) chromaticity co-ordinates were calculated from emission spectra, the values (x, y) were very close to national television system committee (NTSC) standard value of red emission. Therefore the present phosphor was highly useful for display applications.

  19. Thermoelectric and magnetic properties of Yb2MgSi2 prepared by spark plasma sintering method

    NASA Astrophysics Data System (ADS)

    Kubouchi, M.; Hayashi, K.; Miyazaki, Y.

    2016-08-01

    An intermediate-valence compound, Yb2MgSi2, has been prepared using a spark plasma sintering method. The magnetic susceptibility and thermoelectric properties of Yb2MgSi2 are measured in the temperature range from 5 to 300 K. From the magnetic susceptibility results, Yb valence of the Yb2MgSi2 is evaluated. As compared with YbAl3, which is one of the promising thermoelectric materials that can be used at low temperatures, Yb2MgSi2 exhibits a lower absolute value of Seebeck coefficient, higher electrical resistivity, and lower thermal conductivity over the measured temperature range. A maximum dimensionless figure of merit, ZT, of 0.0018 is achieved at around 200 K.

  20. Bio-lubricants derived from waste cooking oil with improved oxidation stability and low-temperature properties.

    PubMed

    Li, Weimin; Wang, Xiaobo

    2015-01-01

    Waste cooking oil (WCO) was chemically modified via epoxidation using H2O2 followed by transesterification with methanol and branched alcohols (isooctanol, isotridecanol and isooctadecanol) to produce bio-lubricants with improved oxidative stability and low temperature properties. Physicochemical properties of synthesized bio-lubricants such as pour point (PP), cloud point (CP), viscosity, viscosity index (VI), oxidative stability, and corrosion resistant property were determined according to standard methods. The synthesized bio-lubricants showed improved low temperature flow performances compared with WCO, which can be attributing to the introduction of branched chains in their molecular structures. What's more, the oxidation stability of the WCO showed more than 10 folds improvement due to the elimination of -C=C-bonds in the WCO molecule. Tribological performances of these bio-lubricants were also investigated using four-ball friction and wear tester. Experimental results showed that derivatives of WCO exhibited favorable physicochemical properties and tribological performances which making them good candidates in formulating eco-friendly lubricants.

  1. Process dependent thermoelectric properties of EDTA assisted bismuth telluride

    NASA Astrophysics Data System (ADS)

    Kulsi, Chiranjit; Kargupta, Kajari; Banerjee, Dipali

    2016-04-01

    Comparison between the structure and thermoelectric properties of EDTA (Ethylene-diamine-tetra-acetic acid) assisted bismuth telluride prepared by electrochemical deposition and hydrothermal route is reported in the present work. The prepared samples have been structurally characterized by high resolution X-ray diffraction spectra (HRXRD), field emission scanning electron microscopy (FESEM) and high resolution transmission electron microscopic images (HRTEM). Crystallite size and strain have been determined from Williamson-Hall plot of XRD which is in conformity with TEM images. Measurement of transport properties show sample in the pellet form (S1) prepared via hydrothermal route has higher value of thermoelectric power (S) than the electrodeposited film (S2). But due to a substantial increase in the electrical conductivity (σ) of the film (S2) over the pellet (S1), the power factor and the figure of merit is higher for sample S2 than the sample S1 at room temperature.

  2. Holey topological thermoelectrics

    NASA Astrophysics Data System (ADS)

    Tretiakov, O. A.; Abanov, Ar.; Sinova, Jairo

    2011-09-01

    We study the thermoelectric properties of three-dimensional topological insulators with many holes (or pores) in the bulk. We show that at high density of these holes, the thermoelectric figure of merit, ZT, can be large due to the contribution of the conducting surfaces and the suppressed phonon thermal conductivity. The maximum efficiency can be tuned by an induced gap in the surface states dispersion through tunneling or external magnetic fields. The large values of ZT, much higher than unity for reasonable parameters, make this system a strong candidate for applications in heat management of nanodevices, especially at low temperatures.

  3. Low-temperature properties of β-MoTe2 grown by the chemical vapor transport method

    NASA Astrophysics Data System (ADS)

    Yu, Qiao-He; Wang, Yi-Yan; Xu, Sheng; Sun, Lin-Lin; Xia, Tian-Long

    2016-08-01

    We synthesized single crystals of β-MoTe2 by the chemical vapor transport (CVT) method. Resistivity and magnetoresistivity (MR) have been measured. The MR displays H 2 behavior at low field and linear field dependence at high field, which is different from the quadratic behavior in the sample obtained from the NaCl-flux method. It is suggested that the observed linear MR may originate from disorder. The quality and low-temperature property of β-MoTe2 clearly depend on the growth method. Moreover, the angular-dependent MR reveals the two-fold symmetry of Fermi surface.

  4. Thermoelectric properties of PEDOT nanowire/PEDOT hybrids

    NASA Astrophysics Data System (ADS)

    Zhang, Kun; Qiu, Jingjing; Wang, Shiren

    2016-04-01

    Freestanding poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires were synthesized by template-confined in situ polymerization, and then integrated into polystyrene sulfonate (PSS)-doped PEDOT and tosylate-doped PEDOT hosts, respectively. The hybrid morphologies were characterized by atomic force microscopy, indicating the homogeneous dispersion of PEDOT nanowires. The thermoelectric properties of the resultant hybrids were measured, and the power factor was found to be enhanced by 9-fold in comparison with PEDOT:PSS mixed with 5 vol% dimethyl sulfoxide while the low thermal conductivity was still maintained. Such a significant improvement could be attributed to the synergistic effects of interfacial energy filtering, component contributions, and changes of carrier concentrations in the host materials. Upon addition of 0.2 wt% PEDOT nanowires, the resultant composites demonstrated a power factor as high as 446.6 μW m-1 K-2 and the thermoelectric figure of merit could reach 0.44 at room temperature. The thermoelectric devices were investigated by using the PEDOT nanowire/PEDOT hybrid as a p-type leg and nitrogen-doped graphene as an n-type leg. The normalized power output was as high as ~0.5 mW m-2 for a temperature gradient of ΔT = 10.1 °C, indicating great potential for practical applications. These findings open up a new route towards high-performance organic thermoelectric materials and devices.Freestanding poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires were synthesized by template-confined in situ polymerization, and then integrated into polystyrene sulfonate (PSS)-doped PEDOT and tosylate-doped PEDOT hosts, respectively. The hybrid morphologies were characterized by atomic force microscopy, indicating the homogeneous dispersion of PEDOT nanowires. The thermoelectric properties of the resultant hybrids were measured, and the power factor was found to be enhanced by 9-fold in comparison with PEDOT:PSS mixed with 5 vol% dimethyl sulfoxide while the low

  5. Tribological properties of low-temperature graphite fluorides. Influence of the structure on the lubricating performances

    NASA Astrophysics Data System (ADS)

    Thomas, P.; Delbé, K.; Himmel, D.; Mansot, J. L.; Cadoré, F.; Guérin, K.; Dubois, M.; Delabarre, C.; Hamwi, A.

    2006-05-01

    The present work is concerned with the study of the tribological properties of various fluorinated carbon phases obtained at room temperature and then post-treated under fluorine atmosphere at different temperatures. The tribological tests evidence good intrinsic properties for all the compounds (friction coefficient in the range 0.07 0.09). Differences appear after few cycles. Friction measurements after 100 cycles and complementary Raman analyses of the tribofilm remaining in the wear scar point out that long term tribologic properties of the fluorinated compounds strongly depend on the evolution undergone by the materials under friction. The release of HF molecules, the loss of fluorine and partial rebuilding of graphitic phases are at the origin of the degradation of the friction properties. The good properties of the compounds post-treated at temperature in the range 150 300 °C are attributed to the chemical and structural stability of these compounds under friction.

  6. Effect of low temperature baking on the RF properties of niobium superconducting cavities for particle accelerators

    SciTech Connect

    Gianluigi Ciovati

    2004-03-01

    Radio-frequency superconducting (SRF) cavities are widely used to accelerate a charged particle beam in particle accelerators. The performance of SRF cavities made of bulk niobium has significantly improved over the last ten years and is approaching the theoretical limit for niobium. Nevertheless, RF tests of niobium cavities are still showing some ''anomalous'' losses that require a better understanding in order to reliably obtain better performance. These losses are characterized by a marked dependence of the surface resistance on the surface electromagnetic field and can be detected by measuring the quality factor of the resonator as a function of the peak surface field. A low temperature (100 C-150 C) ''in situ'' bake under ultra-high vacuum has been successfully applied as final preparation of niobium RF cavities by several laboratories over the last few years. The benefits reported consist mainly of an improvement of the cavity quality factor at low field and a recovery from ''anomalous'' losses (so-called ''Q-drop'') without field emission at higher field. A series of experiments with a CEBAF single-cell cavity have been carried out at Jefferson Lab to carefully investigate the effect of baking at progressively higher temperatures for a fixed time on all the relevant material parameters. Measurements of the cavity quality factor in the temperature range 1.37 K-280 K and resonant frequency shift between 6 K-9.3 K provide information about the surface resistance, energy gap, penetration depth and mean free path. The experimental data have been analyzed with the complete BCS theory of superconductivity. The hydrogen content of small niobium samples inserted in the cavity during its surface preparation was analyzed with Nuclear Reaction Analysis (NRA). The single-cell cavity has been tested at three different temperatures before and after baking to gain some insight on thermal conductivity and Kapitza resistance and the data are compared with different models

  7. The effects of low-temperature plasma treatment on the capillary properties of inorganic fibers

    NASA Astrophysics Data System (ADS)

    Garifullin, A. R.; Abdullin, I. Sh; Skidchenko, E. A.; Krasina, I. V.; Shaekhov, M. F.

    2016-01-01

    Solving the problem of achieving high adhesion between the components in the polymeric composite material (PCM) based on carbon fibers (CF) and basalt fibers (BF) is proposed to use the radio-frequency (RF) plasma under lower pressure by virtue of efficiency, environmental friendliness and rationality of the method. The paper gives the results of studies of the properties of CF and BF after RF capacitive discharge plasma treatment. The plasma modification modes of carbon and basalt fiber were investigated. The efficiency of treatment tool in surface properties modification of carbon and basalt fibers was found, namely capillary properties of CF and BF were researched. The optimal treatment modes were selected. It was found that the method of plasma modification in the radio-frequency capacitive discharge under the lower pressure contributes enhancing the capillary properties of inorganic fibers, in particular carbon and basalt ones. It shows the tendency to increase of the adhesive properties in PCM, and, consequently, the increase of the physical and mechanical properties of the products.

  8. Electronic and thermoelectric properties of nanograting layers

    NASA Astrophysics Data System (ADS)

    Tavkhelidze, A.

    2014-06-01

    Recently, new quantum features have been observed and studied in the area of nanostructured layers. Nanograting (NG) on the surface of the thin layer imposes additional boundary conditions on electron wave function and forbids some quantum states. Electrons, rejected from the forbidden quantum states, have to occupy states with higher energy. In the case of semiconductor materials, electrons rejected from the valence band have to occupy empty quantum states in the conduction band. Such increase in conduction band electron concentration n can be termed as geometry-induced doping or G-doping. G-doping is equivalent to donor doping from the point of view of the increase in n. However, there are no ionized impurities. This preserves charge carrier scattering to the intrinsic semiconductor level and increases carrier mobility. G-doping involves electron confinement to NG layer. Here, we investigate the system of multiple NG layers forming a series of homo junctions. Si and GaAs homojunctions were studied and G-doping levels of 1018-1019 cm-3 were obtained. We also study a system composed of NG layer and an additional top layer forming periodic series of p-n junctions. In such system, charge depletion region develops inside the NG and its effective depth reduces, becoming a rather strong function of temperature T. Consequently, T-dependence of chemical potential magnifies and Seebeck coefficient S increases. We investigate S in the system of semiconductor NG layer having abrupt p-n junctions on the top of the grating. Analysis made on the basis of Boltzmann transport equations shows dramatic increase in S. At the same time, other transport coefficients remain unaffected by the junctions. Calculations show one order of magnitude increase in the thermoelectric figure of merit ZT relative to bulk material.

  9. Oxide Thermoelectric Materials: A Structure-Property Relationship

    NASA Astrophysics Data System (ADS)

    Nag, Abanti; Shubha, V.

    2014-04-01

    Recent demand for thermoelectric materials for power harvesting from automobile and industrial waste heat requires oxide materials because of their potential advantages over intermetallic alloys in terms of chemical and thermal stability at high temperatures. Achievement of thermoelectric figure of merit equivalent to unity ( ZT ≈ 1) for transition-metal oxides necessitates a second look at the fundamental theory on the basis of the structure-property relationship giving rise to electron correlation accompanied by spin fluctuation. Promising transition-metal oxides based on wide-bandgap semiconductors, perovskite and layered oxides have been studied as potential candidate n- and p-type materials. This paper reviews the correlation between the crystal structure and thermoelectric properties of transition-metal oxides. The crystal-site-dependent electronic configuration and spin degeneracy to control the thermopower and electron-phonon interaction leading to polaron hopping to control electrical conductivity is discussed. Crystal structure tailoring leading to phonon scattering at interfaces and nanograin domains to achieve low thermal conductivity is also highlighted.

  10. Structural and Thermoelectric Properties of Ternary Full-Heusler Alloys

    NASA Astrophysics Data System (ADS)

    Hayashi, K.; Eguchi, M.; Miyazaki, Y.

    2016-09-01

    The thermoelectric properties of ternary full-Heusler alloys, Co2 YZ, which are in a ferromagnetic state up to high temperature above 300 K, were measured and are discussed in terms of the crystal structure and electronic states. Among the full-Heusler alloys studied, the Co2MnSi sample exhibited the highest absolute value of Seebeck coefficient and also the highest electrical conductivity in the temperature range from 300 K to 1023 K. The highest power factor of 2.9 × 10-3 W/m-K2 was obtained for the Co2MnSi sample at 550 K, demonstrating the potential of half-metallic full-Heusler alloys as thermoelectric materials.

  11. Anharmonic effects in the thermoelectric properties of PbTe

    SciTech Connect

    Al-Otaibi, Jawaher; Srivastava, G. P.

    2014-07-28

    In this work, we investigate the crystal anharmonic effects in the thermoelectric properties of n-type PbTe. The lattice thermal transport coefficient is computed by employing an isotropic continuum model for the dispersion relation for acoustic as well as optical phonon branches, an isotropic continuum model for crystal anharmonicity, and the single-mode relaxation time scheme. The electronic components of the transport coefficients in a wide temperature range are calculated using the isotropic-nearly-free-electron model, interaction of electrons with deformation potential of acoustic phonons, and the effect of the band non-parabolicity. It is found that the transverse optical branches play a major role in determining the phonon conductivity and the thermoelectric figure of merit of this material.

  12. Properties of aluminum alloys: Tensile, creep, and fatigue data at high and low temperatures

    SciTech Connect

    Kaufman, J.G.

    1999-01-01

    Based on work by Alcoa Laboratories over several years, this book compiles more than 300 tables listing typical average properties of a wide range of aluminum alloys. Contents include: Typical Mechanical Properties of Wrought and Cast Aluminum Alloys at Various Temperatures--tensile properties at subzero temperatures at temperature after various holding times at the test temperature, and at room temperature after exposure at various temperatures for various holding times; creep rupture strengths for various times at various temperatures; stresses required to generate various amounts of creep in various lengths of time; rotating-beam fatigue strengths; modulus of elasticity as a function of temperature; Fatigue Data--fatigue strength of wrought aluminum alloys, axial stress fatigue strength of wrought aluminum alloys (at various stress ratios, smooth and notched specimens), average fatigue strength for aluminum and aluminum alloy flat sheet specimens (under complete reversed flexure), cantilever-beam fatigue test results of aluminum alloys at elevated temperatures and following stabilization at the test temperature. The properties in this book are typical values--expected average values for representative lots produced using commercial processes and that meet industry standards, whose room temperature properties correspond to published typical values for the alloys.

  13. [Study on the Properties of the Pc-Si Films Prepared by Magnetron Co-Sputtering at Low Temperature].

    PubMed

    Duan, Liang-fei; Yang, Wen; Zhang, Li-yuan; Li, Xue-ming; Chen, Xiao-bo; Yang, Pei-zhi

    2016-03-01

    The polycrystalline silicon thin films play an important role in the field of electronics. In the paper, α-SiAl composite membranes on glass substrates was prepared by magnetron co-sputtering. The contents of Al radicals encapsulated-in the α-Si film can be adjusted by changing the Al to Si sputtering power ratios. The as-prepared α-Si films were converted into polycrystalline films by using a rapid thermal annealing (RTP) at low temperature of 350 degrees C for 10 minutes in N2 atmosphere. An X-ray diffractometer, and Raman scattering and UV-Visible-NIR Spectrometers were used to characterize the properties of the Pc-Si films. The influences of Al content on the properties of the Pc-Si films were studied. The results showed that the polycrystalline silicon films were obtained from α-SiAl composite films which were prepared by magnetron co-sputtering at a low temperature following by a rapid thermal annealing. The grain size and the degree of crystallization of the Pc-Si films increased with the increase of Al content, while the optical band gap was reduced. The nc-Si films were prepared when the Al to Si sputtering power ratio was 0.1. And a higher Crystallization rate (≥ 85%) of polycrystalline silicon films were obtained when the ratio was 0.3. The band gaps of the polycrystalline silicon films can be controlled by changing the aluminum content in the films.

  14. Structure and properties of nitrided surface layer produced on NiTi shape memory alloy by low temperature plasma nitriding

    NASA Astrophysics Data System (ADS)

    Czarnowska, Elżbieta; Borowski, Tomasz; Sowińska, Agnieszka; Lelątko, Józef; Oleksiak, Justyna; Kamiński, Janusz; Tarnowski, Michał; Wierzchoń, Tadeusz

    2015-04-01

    NiTi shape memory alloys are used for bone and cardiological implants. However, on account of the metallosis effect, i.e. the release of the alloy elements into surrounding tissues, they are subjected to various surface treatment processes in order to improve their corrosion resistance and biocompatibility without influencing the required shape memory properties. In this paper, the microstructure, topography and morphology of TiN surface layer on NiTi alloy, and corrosion resistance, both before and after nitriding in low-temperature plasma at 290 °C, are presented. Examinations with the use of the potentiodynamic and electrochemical impedance spectroscopy methods were carried out and show an increase of corrosion resistance in Ringer's solution after glow-discharge nitriding. This surface titanium nitride layer also improved the adhesion of platelets and the proliferation of osteoblasts, which was investigated in in vitro experiments with human cells. Experimental data revealed that nitriding NiTi shape memory alloy under low-temperature plasma improves its properties for bone implant applications.

  15. Impact of fatty ester composition on low temperature properties of biodiesel-petroleum diesel blends

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Several biodiesel fuels along with neat fatty acid methyl esters (FAMEs) commonly encountered in biodiesel were blended with ultra-low sulfur diesel (ULSD) fuel at low blend levels permitted by ASTM D975 (B1-B5) and cold flow properties such as cloud point (CP), cold filter plugging point (CFPP), an...

  16. Structural and mechanical property changes in toughened magnesia-partially-stabilized zirconia at low temperatures

    SciTech Connect

    Marshall, D.B.; James, M.R.; Porter, J.R.

    1989-02-01

    The mechanical properties of high-toughness magnesia-partially-stabilized zirconia were found to be dramatically altered by a single cooling cycle between room temperature and - 196/sup 0/C. Raman spectroscopy and X-ray diffraction were used to correlate the changes in mechanical properties with structural changes that occur at temperatures below -- 100/sup 0/C. Most of the the tetragonal precipitates that are responsible for toughening transformed to an orthorhombic phase with unit-cell volume intermediate between those of the tetragonal and monoclinic phases. The orthorhombic phase was stable with heating to 300/sup 0/C, but it transformed back to the tetragonal structure when heated to 400/sup 0/C.

  17. Electrical properties of LiKSO 4 crystals at low temperatures

    NASA Astrophysics Data System (ADS)

    de Sousa, R. C.; de Paiva, J. A. C.; mendes Filho, J.; Sergio Bezerra Sombra, A.

    1993-09-01

    An overview of the dielectric and pyroelectric properties of LiKSO 4 (LKS) from 4 K to 300 K is presented. The pyroelectric coefficient and the dielectric constant shows anomalous behavior associated with phase transitions occuring in the crystal. Comparing the pyroelectric coefficient as measured parallel and perpendicular to the " z" axis, we conclude that the new phase below 20 K belongs to the spatial group C1s or C2s.

  18. Mechanical property tests on structural materials for ITER magnet system at low temperatures in China

    NASA Astrophysics Data System (ADS)

    Huang, Chuanjun; Huang, Rongjin; Li, Laifeng

    2014-01-01

    High field superconducting magnets need strong non-superconducting components for structural reinforcement. For instance, the ITER magnet system (MS) consists of cable-in-conduit conductor, coil case, magnet support, and insulating materials. Investigation of mechanical properties at magnet operation temperature with specimens machined at the final manufacturing stages of the conductor jacket materials, magnet support material, and insulating materials, even the component of the full-size conductor jacket is necessary to establish sound databases for the products. In China, almost all mechanical property tests of structural materials for the ITER MS, including conductor jacket materials of TF coils, PF coils, CCs, case material of CCs, conductor jacket materials of Main Busbars (MB) and Corrector Busbars (CB), material of magnet supports, and insulating materials of CCs have been carried out at the Technical Institute of Physics and Chemistry (TIPC), Chinese Academy of Sciences (CAS). In this paper, the mechanical property test facilities are briefly demonstrated and the mechanical tests on the structural materials for the ITER MS, highlighting test rigs as well as test methods, are presented.

  19. Characterization of low-temperature properties of plant-produced rap mixtures in the Northeast

    NASA Astrophysics Data System (ADS)

    Medeiros, Marcelo S., Junior

    The dissertation outlined herein results from a Federal Highway Administration sponsored project intended to investigate the impacts of high percentages of RAP material in the performance of pavements under cold climate conditions. It is comprised of two main sections that were incorporated into the body of this dissertation as Part I and Part II. In Part I a reduced testing framework for analysis of HMA mixes was proposed to replace the IDT creep compliance and strength testing by dynamic modulus and fatigue tests performed on an AMPT device. A continuum damage model that incorporates the nonlinear constitutive behavior of the HMA mixtures was also successfully implemented and validated. Mixtures with varying percentages of reclaimed material (RAP) ranging from 0 to 40% were used in this research effort in order to verify the applicability of the proposed methodology to RAP mixtures. Part II is concerned with evaluating the effects of various binder grades on the properties of plant-produced mixtures with various percentages of RAP. The effects of RAP on mechanical and rheological properties of mixtures and extracted binders were studied in order to identify some of the deficiencies in the current production methodologies. The results of this dissertation will help practitioners to identify optimal RAP usage from a material property perspective. It also establishes some guidelines and best practices for the use of higher RAP percentages in HMA.

  20. Effect of Electropolishing and Low-Temperature Baking on the Superconducting Properties of Large-Grain Niobium

    SciTech Connect

    A. S. Dhavale, G. Ciovati, G. R. Myneni

    2011-03-01

    Measurements of superconducting properties such as bulk and surface critical fields and thermal conductivity have been carried out in the temperature range from 2 K to 8 K on large-grain samples of different purity and on a high-purity fine-grain sample, for comparison. The samples were treated by electropolishing and low temperature baking (120° C, 48 h). While the residual resistivity ratio changed by a factor of ~3 among the samples, no significant variation was found in their superconducting properties. The onset field for flux penetration at 2 K, Hffp, measured within a ~30 µm depth from the surface, was ~160 mT, close to the bulk value. The baking effect was mainly to increase the field range up to which a coherent superconducting phase persists on the surface, above the upper critical field.

  1. Thermoelectric properties of Bi-doped PbTe composites

    NASA Astrophysics Data System (ADS)

    Popescu, A.; Datta, A.; Nolas, G. S.; Woods, L. M.

    2011-05-01

    An experimental and theoretical study is presented for n-type Bi-doped PbTe composites with different grain sizes and doping levels. The bulk polycrystalline composites were prepared by spark plasma sintering of the nanocrystals synthesized via micro-emulsion and direct precipitation. This technique is particularly attractive due to its low cost, its reproducibility, and the control of the composition and nanocrystal size that it affords. The thermoelectric properties of the synthesized specimens were experimentally measured and theoretically modeled. Our calculations reveal that the inclusion of electron/grain and phonon/grain interface scattering is crucial for the correct description and interpretation of the measured properties.

  2. Elastic Properties of Films of Water and Noble Gases Condensed at Low Temperatures

    NASA Technical Reports Server (NTRS)

    Pohl, Robert O.

    2003-01-01

    We have shown that there are extensive similarities between the quench-condensed noble gas films and those of amorphous water ice. In particular, both can be quite soft upon deposition and can stiffen considerably when annealed. Furthermore, this stiffening follows a logarithmic time dependence for all substances. The temperature dependence of these behaviors scales with the triple point. The results shown here show a strong thickness dependence, which has implications for any study of mechanical properties of films on substrates. The temperature dependence of the stiffening and the stiffening rate have now been characterized for the noble gases, and these observations provide a roadmap for new experiments on amorphous water ice.

  3. Low-temperature properties of neutron irradiated CuGeO3 single crystals

    NASA Astrophysics Data System (ADS)

    Gladczuk, L.; Mosiniewicz-Szablewska, E.; Dabkowska, H.; Baran, M.; Pytel, B.; Szymczak, R.; Szymczak, H.

    2000-07-01

    The effect of neutron irradiation on the magnetic properties of CuGeO3 single crystal which shows the spin-Peierls transition below T sp=14 K was investigated by means of electron paramagnetic resonance (EPR) and susceptibility measurements. It was found that the irradiation led to a decrease of the spin-Peierls transition temperature and induced appreciable changes in the EPR signal intensity, resonance linewidth, g-factor and magnetic susceptibility of this material. These changes may be associated with a partial suppression of both the energy gap and the dimerization within the Cu chains.

  4. Low-temperature growth and optical properties of Ce-doped ZnO nanorods

    NASA Astrophysics Data System (ADS)

    Yang, Jinghai; Gao, Ming; Yang, Lili; Zhang, Yongjun; Lang, Jihui; Wang, Dandan; Wang, Yaxin; Liu, Huilian; Fan, Hougang

    2008-12-01

    Ce-doped ZnO nanorods were prepared by sol-gel method with low annealing temperature of 500 °C. The effects of Ce doping on the structural and optical properties of ZnO nanorods were investigated in detail. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and Raman-scattering spectroscopy measurements. The XRD results showed that Ce was doped into ZnO nanorods because of no diffraction peaks of Ce or cerium oxide in the pattern. The synthesis temperature of Ce-doped ZnO nanorods decreased from 900 to 500 °C compared to that of pure ZnO nanorods. Compared with pure ZnO, UV peaks shifted towards the blue color and the intensity of visible peaks decreased after Ce doping. The PL properties of Ce-doped ZnO nanorods depend on both the synthesis temperatures and the dopant. In Raman spectra of doped samples, some classical modes, such as A 1 and E 1 modes, disappear, and the E 2 modes blue shift.

  5. Microstructural and Mössbauer properties of low temperature synthesized Ni-Cd-Al ferrite nanoparticles

    PubMed Central

    2011-01-01

    We report the influence of Al3+ doping on the microstructural and Mössbauer properties of ferrite nanoparticles of basic composition Ni0.2Cd0.3Fe2.5 - xAlxO4 (0.0 ≤ x ≤ 0.5) prepared through simple sol-gel method. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray, transmission electron microscopy (TEM), Fourier transformation infrared (FTIR), and Mössbauer spectroscopy techniques were used to investigate the structural, chemical, and Mössbauer properties of the grown nanoparticles. XRD results confirm that all the samples are single-phase cubic spinel in structure excluding the presence of any secondary phase corresponding to any structure. SEM micrographs show the synthesized nanoparticles are agglomerated but spherical in shape. The average crystallite size of the grown nanoparticles was calculated through Scherrer formula and confirmed by TEM and was found between 2 and 8 nm (± 1). FTIR results show the presence of two vibrational bands corresponding to tetrahedral and octahedral sites. Mössbauer spectroscopy shows that all the samples exhibit superparamagnetism, and the quadrupole interaction increases with the substitution of Al3+ ions. PMID:21851597

  6. Low temperature mechanical properties, fractographic and metallographic evaluation of several alloy steels

    NASA Technical Reports Server (NTRS)

    Montano, J. W.

    1973-01-01

    The mechanical properties are presented of alloy steels, 4130, 4140, 4340, 6150, and 8740. Test specimens were manufactured from approximately 1.00 inch (2.54 cm) diameter bar stock which had been heat treated to two different hardness levels. The following mechanical tests were performed at temperatures of 80 F (+26.7 C), 0 F (-17.8 C), -100 F (-73 C), and -200 F (-129 C): (1) tensile test (Ultimate, yield, modulus, elongation, and reduction of area), (2) notched tensile test, (3) charpy V-notched impact test (impact energy), and (4) double shear strength test (ultimate and yield). The test data indicate excellent tensile strength, notched/unnotched tensile ratios, ductility, impact, and shear properties at all test temperatures, except at -200 F (-129 C) where the impact strength of the higher strength group of alloy steels, 4130 (Rc-37) and 4140 (Rc-44) decreased to approximately 9 ft. lbs. (12 joules) and 6 ft. lbs. (8 joules), respectively. Chemical, metallographic, and fractographic analyses were also performed to evaluate microstructure, microhardness and the effect of decrease in temperature on the ductile to brittle failure transition.

  7. Charge transport and magnetic properties of coaxial composite fibrils of polypyrrole/multiwall carbon nanotubes at low temperature

    NASA Astrophysics Data System (ADS)

    Bhatia, Ravi; Sameera, I.; Prasad, V.; Menon, Reghu

    2013-04-01

    We report the low temperature electrical and magnetic properties of polypyrrole (PPy)/multiwall carbon nanotube (MWNT) coaxial composite fibrils synthesized by the electro-polymerization method. The iron-filled MWNTs were first grown by chemical vapor deposition of a mixture of liquid phase organic compound and ferrocene by the one step method. Then the PPy/MWNT fibrils were prepared by the electrochemical polymerization process. Electron microscopy studies reveal that PPy coating on the surface of nanotube is quite uniform throughout the length. The temperature dependent electrical resistivity and magnetization measurements were done from room temperature down to 5 and 10 K, respectively. The room temperature resistivity (ρ) of PPy/MWNT composite fibril sample is ˜3.8 Ωcm with resistivity ratio [R5 K/R300 K] of ˜300, and the analysis of ρ(T) in terms of reduced activation energy shows that resistivity lies in the insulating regime below 40 K. The resistivity varies according to three dimensional variable range hopping mechanism at low temperature. The magnetization versus applied field (M-H loop) data up to a field of 20 kOe are presented, displaying ferromagnetic behavior at all temperatures with enhanced coercivities ˜680 and 1870 Oe at room temperature and 10 K, respectively. The observation of enhanced coercivity is due to significant dipolar interaction among encapsulated iron nanoparticles, and their shape anisotropy contribution as well.

  8. Electro-Mechanical Properties of Metal-Insulator-Metal Device Fabricated on Polymer Substrate Using Low-Temperature Process

    NASA Astrophysics Data System (ADS)

    Park, Sung Kyu; Han, Jeong In; Kim, Won Keun; Hong, Sung Jei; Kwak, Min Gi; Lee, Myung Jae; Chung, Kwan Soo

    2002-02-01

    High-performance metal-insulator-metal (MIM) devices on flexible polymer substrates were successfully fabricated without any defects such as cracks, delamination and blistering. This work examines the mechanical and electrical properties of MIM devices constructed using anodic Ta2O5 films. Using newly developed methods including stepped heating process and low-temperature post-annealing below 180°C, we obtained high-performances MIM devices on polymer substrates. Here, we propose the use of stacked bottom electrode and water barrier layer in order to enhance the ductility of the Ta electrode and to prevent blistering problems, respectively. Rutherford backscattering spectroscopy (RBS), auger electron spectroscopy (AES) and transmission electronic microscope (TEM) observations were performed for the structural investigation of the MIM devices on polymer substrates. Electrical measurements were also carried out for as-deposited and thermally treated MIM devices including Al/Ta/Ta2O5/Cr or Ti structures. They exhibit a low leakage current (below 10-7 A/cm2 at 2 MV) and reasonable breakdown voltage (5-7 MV/cm) with a uniformity of 92%. Finally, under low-temperature post-annealing conditions, The Current-Voltage (I-V) behaviors and conduction mechanisms of MIM devices on polymer substrates are discussed based on the results of electrical measurements, structural investigations and conduction band modeling.

  9. Effects of Low Temperature Anneal on the Interface Properties of Thermal Silicon Oxide for Silicon Surface Passivation.

    PubMed

    Balaji, Nagarajan; Park, Cheolmin; Chung, Sungyoun; Ju, Minkyu; Raja, Jayapal; Yi, Junsin

    2016-05-01

    High quality surface passivation has gained a significant importance in photovoltaic industry for reducing the surface recombination and hence fabricating low cost and high efficiency solar cells using thinner wafers. The formation of good-quality SiO2 films and SiO2/Si interfaces at low processing temperatures is a prerequisite for improving the conversion efficiency of industrial solar cells with better passivation. High-temperature annealing in inert ambient is promising to improve the SiO2/Si interface. However, annealing treatments could cause negative effects on SiO2/Si interfaces due to its chemical at high temperatures. Low temperature post oxidation annealing has been carried out to investigate the structural and interface properties of Si-SiO2 system. Quasi Steady State Photo Conductance measurements shows a promising effective carrier lifetime of 420 μs, surface recombination velocity of 22 cm/s and a low interface trap density (D(it)) of 4 x 10(11) states/cm2/eV after annealing. The fixed oxide charge density was reduced to 1 x 10(11)/cm2 due to the annealing at 500 degrees C. The FWHM and the Si-O peak wavenumber corresponding to the samples annealed at 500 degrees C reveals that the Si dangling bonds in the SiO2 films due to the oxygen defects was reduced by the low temperature post oxidation annealing. PMID:27483822

  10. Low-Temperature Thermodynamic Properties of Superconducting Antiperovskite CdCNi_3

    NASA Astrophysics Data System (ADS)

    Szczȩśniak, R.; Durajski, A. P.; Skoczylas, K. M.; Herok, Ł.

    2016-06-01

    We investigate the thermodynamic parameters of the superconducting antiperovskite CdCNi_3 using the Eliashberg approach which is an excellent tool to the exact characterization of the conventional superconductors. In particular, we reproduce the measured superconducting transition temperature (T_C=3.2 K) for a high value of the Coulomb pseudopotential (μ ^{star }C=0.22). Then we determine the energy gap, the thermodynamic critical field and the specific heat for the superconducting and normal state. On this basis, we show that the thermodynamic properties of CdCNi_3 differ slightly from the prediction of the Bardeen-Cooper-Schrieffer theory, which means that CdCNi_3 is a medium-coupling superconductor in contrast to related strong-coupling MgCNi_3.

  11. Performance Prediction of Commercial Thermoelectric Cooler Modules using the Effective Material Properties

    NASA Astrophysics Data System (ADS)

    Lee, HoSung; Attar, Alaa M.; Weera, Sean L.

    2015-06-01

    This work examines the validity of formulating the effective thermoelectric material properties as a way to predict thermoelectric module performance. The three maximum parameters (temperature difference, current, and cooling power) of a thermoelectric cooler were formulated on the basis of the hot junction temperature. Then, the effective material properties (Seebeck coefficient, electrical resistance, and thermal conductivity) were defined in terms of the three maximum parameters that were taken from either a commercial thermoelectric cooler module or the measurements. It is demonstrated that the simple standard equation with the effective material properties predicts well the performance curves of the four selected commercial products. Normalized parameters over the maximum parameters were also formulated to present the characteristics of the thermoelectric coolers along with the normalized charts. The normalized charts would be universal for a given thermoelectric material.

  12. Measurement of low temperature thermal properties of microcalorimeters using Johnson noise thermometry

    NASA Astrophysics Data System (ADS)

    Bazzi, Khadije

    Lithium-ion batteries are the power source of choice for portable electronics, power tools and electric-based transportation. This outstanding commercial success has spawned great international interest in applying this technology to systems that demand higher power, such as the electric component of hybrid, extended range, and electric vehicles. This would require new electrode materials that are less expensive, more energetic, and more environmentally friendly than the present ones. Of particular interest is the olivine-structured LiFePO 4 cathode developed by Goodenough and co-workers, which offers several appealing features, such as a high, flat voltage profile and relatively high theoretical specific capacity (170 mAhg-1), combined with low cost and low toxicity. However, the intrinsically poor electronic and ionic conductivities of LiFePO4 limit the delivery of high specific capacity at high discharge rates. Several strategies have been devised to overcome the inherent limitations of LiFePO4. Carbon coating is one of the remedies to improve the performance of LiFePO 4. We studied the effect of carbon coating on the performance of LiFePO 4. First, we synthesized carbon-coated LiFePO4 samples with different amount of surfactant, lauric acid that acts as carbon source. We were able to show that an optimized amount of carbon results in greatly improved room-temperature electrochemical performance. On the other hand, because the electrochemical properties are strongly dependent on the quality of deposited carbon, we did also study the effect of carbon sources: lauric acid, myristic acid and oleic acid. We successfully showed that the proper carbon sources and carbon content played a key role on improving the initial charge-discharge capacity of the LiFePO4/C cathode. In addition, we did also shed the light of the positive impact of excess of Li on the electrochemical performance of C-LiFePO4. Knowing that Fe-site doping is considered to be an effective way to

  13. Low Temperature Mechanical Properties of Cyanate Ester Insulation Systems After Irradiation

    NASA Astrophysics Data System (ADS)

    Fabian, P. E.; Munshi, N. A.; Feucht, S. W.; Bittner-Rohrhofer, K.; Humer, K.; Weber, H. W.

    2004-06-01

    Recent development of alternative resin chemistries has resulted in new, fiber-reinforced, insulation systems for use in superconducting and fusion magnet applications. When compared to traditional epoxy resins, these insulation systems, based on cyanate ester resin chemistry, offer increased radiation resistance and higher operating temperatures that are demanded by new fusion reactor designs, such as the Fusion Ignition Research Experiment (FIRE). The design parameters for FIRE Toroidal Field (TF) coils call for an insulation system capable of withstanding a combined gamma and neutron radiation dose greater than 108 Gy (1010 Rad) and operate at temperatures ranging from cryogenic (77 K) to elevated temperatures up to 373 K. Several of these newly developed composite insulation systems, suitable for the vacuum impregnation, pre-preg, and high-pressure laminate fabrication processes, were irradiated in the TRIGA reactor (Vienna) to varying levels of radiation to gauge their radiation resistance. The insulation materials' shear and compression properties measured at cryogenic temperatures before and after irradiation are presented.

  14. Scintillation properties of the silver doped lithium iodide single crystals at room and low temperature

    NASA Astrophysics Data System (ADS)

    Khan, Sajid; Kim, H. J.; Lee, M. H.

    2016-06-01

    This study presents luminescence and scintillation properties of Silver doped LiI crystals. Single crystals of LiI: x% Ag (x=0.02, 0.05, 0.1 and 0.5) were grown by using the Bridgman technique. X-ray induced luminescence spectra show emission bands spanning from 275 nm to 675 nm, dominated by Ag+ band having a peak at 300 nm. Under UV-luminescence, a similar emission band was observed with the peak excitation wavelength of 265 nm. Energy resolution, light yield and decay time profiles of the samples were measured under a 137Cs γ-ray irradiation. The LiI(0.1%Ag) showed the highest light yield and the best energy resolution among the samples. The light yield of LiI(0.1%Ag) is higher than commercially available LiI(Eu) crystal (15,000±1500 ph/MeV). The LiI(Ag) samples exhibit three exponential decay time components except the LiI(0.02%Ag), where the fitting found two decay time components. Temperature dependences of emission spectra, light yield and decay time were studied from 300 K to 10 K. The LiI(0.1%Ag) crystal showed an increase in the light yield and a shortening of decay time with a decrease in temperature..

  15. Low temperature dielectric properties of YMn0.95Ru0.05O3

    NASA Astrophysics Data System (ADS)

    Thakur, Rajesh K.; Thakur, Rasna; Okram, G. S.; Kaurav, N.; Gaur, N. K.

    2013-02-01

    The single phase hexagonal YMn0.95Ru0.05O3 compound has been synthesized via solid state reaction method at sintering temperature 1280°C with space group P63cm (25-1079). The detailed dielectric properties were evaluated over broad temperature and frequency ranges. An obvious dielectric relaxation was observed near the antiferromagnetic (AFM) transition temperature. The temperature dependence of the ac resistivity at low frequency infers the semiconducting behavior and favored the variable range hopping conduction model. The obtained experimental data in the temperature range of our study can be described by the equation ρ(T) = ρ0exp[(T*/T)1/4]. The fitting results are used for the calculation of the temperature scale T* ˜ 0.8 × 104 K and finally the density of state at Fermi level N(EF). The activation energy Ea ˜ 0.0314 eV is calculated from the plot, peak temperature of the loss tangent near the magnetic transition region versus frequency using Arrhenius law.

  16. Magnetostrictive and piezomagnetic properties of Tb1-xDyxZn at low temperatures

    NASA Astrophysics Data System (ADS)

    Wun-Fogle, Marilyn; Restorff, James B.; Clark, Arthur E.; Cullen, James B.; Lograsso, Thomas A.

    2001-07-01

    Tb1-xDyxZn(0 axes can be changed to very hard <100> axes by increasing x from 0 to 1. (In fact, the existence of a near zero magnetic anisotropy by the proper choice of x is the origin of the well-known Terfenol-D alloys, Tb1-xDyxFe2). The Tb$1-x)DyxZn system discussed here is particularly attractive because of the simplicity of its crystal structure (CsCl), its relatively high Curie temperatures (for rare earth alloys), and the existence of a large (uv0) phase for T < 50K. A summary of some of the important properties of these three alloy systems is given in Table I. In all these systems, at least one of the magnetostriction constraints is very large.

  17. Polycrystalline methane hydrate: Synthesis from superheated ice, and low-temperature mechanical properties

    USGS Publications Warehouse

    Stern, L.A.; Kirby, S.H.; Durham, W.B.

    1998-01-01

    We describe a new and efficient technique to grow aggregates of pure methane hydrate in quantities suitable for physical and material properties testing. Test specimens were grown under static conditions by combining cold, pressurized CH4 gas with granulated H2O ice, and then warming the reactants to promote the reaction CH4(g) + 6H2O(s???1) ??? CH4??6H2O (methane hydrate). Hydrate formation evidently occurs at the nascent ice/liquid water interface on ice grain surfaces, and complete reaction was achieved by warming the system above the ice melting point and up to 290 K, at 25-30 MPa, for approximately 8 h. The resulting material is pure, cohesive, polycrystalline methane hydrate with controlled grain size and random orientation. Synthesis conditions placed the H2O ice well above its melting temperature while reaction progressed, yet samples and run records showed no evidence for bulk melting of the unreacted portions of ice grains. Control experiments using Ne, a non-hydrate-forming gas, showed that under otherwise identical conditions, the pressure reduction and latent heat associated with ice melting are easily detectable in our fabrication apparatus. These results suggest that under hydrate-forming conditions, H2O ice can persist metastably to temperatures well above its ordinary melting point while reacting to form hydrate. Direct observations of the hydrate growth process in a small, high-pressure optical cell verified these conclusions and revealed additional details of the hydrate growth process. Methane hydrate samples were then tested in constant-strain-rate deformation experiments at T = 140-200 K, Pc = 50-100 MPa, and ?? = 10-4 10-6 s-1. Measurements in both the brittle and ductile fields showed that methane hydrate has measurably different strength than H2O ice, and work hardens to an unusually high degree compared to other ices as well as to most metals and ceramics at high homologous temperatures. This work hardening may be related to a changing

  18. Computation of the properties of liquid neon, methane, and gas helium at low temperature by the Feynman-Hibbs approach.

    PubMed

    Tchouar, N; Ould-Kaddour, F; Levesque, D

    2004-10-15

    The properties of liquid methane, liquid neon, and gas helium are calculated at low temperatures over a large range of pressure from the classical molecular-dynamics simulations. The molecular interactions are represented by the Lennard-Jones pair potentials supplemented by quantum corrections following the Feynman-Hibbs approach. The equations of state, diffusion, and shear viscosity coefficients are determined for neon at 45 K, helium at 80 K, and methane at 110 K. A comparison is made with the existing experimental data and for thermodynamical quantities, with results computed from quantum numerical simulations when they are available. The theoretical variation of the viscosity coefficient with pressure is in good agreement with the experimental data when the quantum corrections are taken into account, thus reducing considerably the 60% discrepancy between the simulations and experiments in the absence of these corrections.

  19. Low-temperature specific heat and magnetic properties of the filled skutterudite ferromagnet NdRu4As12

    NASA Astrophysics Data System (ADS)

    Rudenko, A.; Henkie, Z.; Cichorek, T.

    2016-09-01

    We present the low-temperature specific heat and magnetic properties of the filled skutterudite compound NdRu4As12 that exhibits a ferromagnetic transition at TC ≃ 2.3 K . Magnetic entropy considerations point at a quartet ground state of the Nd3+ ions. Deep in the ferromagnetic state, the heat capacity shows a Schottky anomaly that we ascribe to the Zeeman splitting in the presence of a molecular field. Comparison of the specific heats of NdRu4As12 and its Os-based homologue near their Curie temperatures supports our earlier observation suggesting an unusual lowering of the Th cubic point symmetry in the latter filled skutterudite.

  20. Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells

    PubMed Central

    2011-01-01

    We study the effects of low-temperature capping (200-450°C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown at 200°C, while there is a slight degradation of the optical quality in AlGaAs capping layers grown at temperatures above 350°C compared to that of a high-temperature capping layer. In addition, the optical quality can be restored by post-growth annealing without any structural change, except for the 200°C-capped sample. PMID:21711596

  1. [Study on the Properties of the Pc-Si Films Prepared by Magnetron Co-Sputtering at Low Temperature].

    PubMed

    Duan, Liang-fei; Yang, Wen; Zhang, Li-yuan; Li, Xue-ming; Chen, Xiao-bo; Yang, Pei-zhi

    2016-03-01

    The polycrystalline silicon thin films play an important role in the field of electronics. In the paper, α-SiAl composite membranes on glass substrates was prepared by magnetron co-sputtering. The contents of Al radicals encapsulated-in the α-Si film can be adjusted by changing the Al to Si sputtering power ratios. The as-prepared α-Si films were converted into polycrystalline films by using a rapid thermal annealing (RTP) at low temperature of 350 degrees C for 10 minutes in N2 atmosphere. An X-ray diffractometer, and Raman scattering and UV-Visible-NIR Spectrometers were used to characterize the properties of the Pc-Si films. The influences of Al content on the properties of the Pc-Si films were studied. The results showed that the polycrystalline silicon films were obtained from α-SiAl composite films which were prepared by magnetron co-sputtering at a low temperature following by a rapid thermal annealing. The grain size and the degree of crystallization of the Pc-Si films increased with the increase of Al content, while the optical band gap was reduced. The nc-Si films were prepared when the Al to Si sputtering power ratio was 0.1. And a higher Crystallization rate (≥ 85%) of polycrystalline silicon films were obtained when the ratio was 0.3. The band gaps of the polycrystalline silicon films can be controlled by changing the aluminum content in the films. PMID:27400496

  2. Interpretation of thermoelectric properties of Cu substituted LaCoO{sub 3} ceramics

    SciTech Connect

    Choudhary, K. K.; Kaurav, N.; Sharma, U.; Ghosh, S. K.

    2014-04-24

    The thermoelectric properties of LaCo{sub 1−x}Cu{sub x}O{sub 3−δ} is theoretically analyzed, it is observed that thermoelectric figure of merit ZT (=S{sup 2}σT/κ) is maximized by Cu substitution in LaCoO{sub 3} Ceramics at x=0.15. The lattice thermal conductivity and thermoelectric power were estimated by the scattering of phonons with defects, grain boundaries, electrons and phonons to evaluate the thermoelectric properties. We found that Cu substitution increase the phonon scattering with grain boundaries and defects which significantly increase the thermoelectric power and decrease the thermal conductivity. The present numerical analysis will help in designing more efficient thermoelectric materials.

  3. Thermoelectric properties of PbTe/PbSe mesomaterials

    NASA Astrophysics Data System (ADS)

    Chen, Feng; Wang, Yaqi; Xue, Yuyi; Chu, C. W.; Zhang, Jun; Fang, Jiye; Tan, Chunhu; Lin, Zhigang; Liu, Bob

    2008-03-01

    Ball milled PbTe mixed with PbSe nano-wires (PTSW) or with PbSe nano-crystals (PTSC) are sintered under high pressure. Different sintering conditions are tested to preserve the mesostructures. Thermoelectric properties (resistivity, Seebeck coefficient and thermal conductivity) are measured at various temperatures. Pure ball milled PbTe are also sintered and measured for comparison. In this talk, we will present these data and compare with various PbTe data from the literature. Our results show that this mesostructure approach is promising and the sintering condition is the key factor for further improvement.

  4. Computational modeling and analysis of thermoelectric properties of nanoporous silicon

    SciTech Connect

    Li, H.; Yu, Y.; Li, G.

    2014-03-28

    In this paper, thermoelectric properties of nanoporous silicon are modeled and studied by using a computational approach. The computational approach combines a quantum non-equilibrium Green's function (NEGF) coupled with the Poisson equation for electrical transport analysis, a phonon Boltzmann transport equation (BTE) for phonon thermal transport analysis and the Wiedemann-Franz law for calculating the electronic thermal conductivity. By solving the NEGF/Poisson equations self-consistently using a finite difference method, the electrical conductivity σ and Seebeck coefficient S of the material are numerically computed. The BTE is solved by using a finite volume method to obtain the phonon thermal conductivity k{sub p} and the Wiedemann-Franz law is used to obtain the electronic thermal conductivity k{sub e}. The figure of merit of nanoporous silicon is calculated by ZT=S{sup 2}σT/(k{sub p}+k{sub e}). The effects of doping density, porosity, temperature, and nanopore size on thermoelectric properties of nanoporous silicon are investigated. It is confirmed that nanoporous silicon has significantly higher thermoelectric energy conversion efficiency than its nonporous counterpart. Specifically, this study shows that, with a n-type doping density of 10{sup 20} cm{sup –3}, a porosity of 36% and nanopore size of 3 nm × 3 nm, the figure of merit ZT can reach 0.32 at 600 K. The results also show that the degradation of electrical conductivity of nanoporous Si due to the inclusion of nanopores is compensated by the large reduction in the phonon thermal conductivity and increase of absolute value of the Seebeck coefficient, resulting in a significantly improved ZT.

  5. Thermoelectric properties of p-type PbTe/Ag{sub 2}Te bulk composites by extrinsic phase mixing

    SciTech Connect

    Lee, Min Ho; Rhyee, Jong-Soo

    2015-12-15

    We investigated the thermoelectric properties of PbTe/Ag{sub 2}Te bulk composites, synthesized by hand milling, mixing, and hot press sintering. From x-ray diffraction and energy dispersive x-ray spectroscopy measurements, we observed Ag{sub 2}Te phase separation in the PbTe matrix without Ag atom diffusion. In comparison with previously reported pseudo-binary (PbTe){sub 1−x}(Ag{sub 2}Te){sub x} composites, synthesized by high temperature phase separation, the PbTe/Ag{sub 2}Te bulk composites fabricated with a low temperature phase mixing process give rise to p-type conduction of carriers with significantly decreased electrical conductivity. This indicates that Ag atom diffusion in the PbTe matrix changes the sign of the Seebeck coefficient to n-type and also increases the carrier concentration. Effective p-type doping with low temperature phase separation by mixing and hot press sintering can enhance the thermoelectric performance of PbTe/Ag{sub 2}Te bulk composites, which can be used as a p-type counterpart of n-type (PbTe){sub 1−x}(Ag{sub 2}Te){sub x} bulk composites.

  6. Low-temperature growth of aligned ZnO nanorods: effect of annealing gases on the structural and optical properties.

    PubMed

    Umar, Ahmad; Hahn, Yoon-Bong; Al-Hajry, A; Abaker, M

    2014-06-01

    Aligned ZnO nanorods were grown on ZnO/Si substrate via simple aqueous solution process at low-temperature of - 65 degrees C by using zinc nitrate and hexamethylenetetramine (HMTA). The detailed morphological and structural properties measured by FESEM, XRD, EDS and TEM confirmed that the as-grown nanorods are vertically aligned, well-crystalline possessing wurtzite hexagonal phase and grown along the [0001] direction. The room-temperature photoluminescence spectrum of the grown nanorods exhibited a strong and broad green emission and small ultraviolet emission. The as-prepared ZnO nanorods were post-annealed in nitrogen (N2) and oxygen (O2) environments and further characterized in terms of their morphological, structural and optical properties. After annealing the nanorods exhibit well-crystallinity and wurtzite hexagonal phase. Moreover, by annealing the PL spectra show the enhancement in the UV emission and suppression in the green emission. The presented results demonstrate that simply by post-annealing process, the optical properties of ZnO nanostructures can be controlled.

  7. Significant enhancement of thermoelectric properties and metallization of Al-doped Mg{sub 2}Si under pressure

    SciTech Connect

    Morozova, Natalia V.; Korobeinikov, Igor V.; Karkin, Alexander E.; Shchennikov, Vladimir V.; Ovsyannikov, Sergey V. E-mail: sergey2503@gmail.com; Takarabe, Ken-ichi; Mori, Yoshihisa; Nakamura, Shigeyuki

    2014-06-07

    We report results of investigations of electronic transport properties and lattice dynamics of Al-doped magnesium silicide (Mg{sub 2}Si) thermoelectrics at ambient and high pressures to and beyond 15 GPa. High-quality samples of Mg{sub 2}Si doped with 1 at. % of Al were prepared by spark plasma sintering technique. The samples were extensively examined at ambient pressure conditions by X-ray diffraction studies, Raman spectroscopy, electrical resistivity, magnetoresistance, Hall effect, thermoelectric power (Seebeck effect), and thermal conductivity. A Kondo-like feature in the electrical resistivity curves at low temperatures indicates a possible magnetism in the samples. The absolute values of the thermopower and electrical resistivity, and Raman spectra intensity of Mg{sub 2}Si:Al dramatically diminished upon room-temperature compression. The calculated thermoelectric power factor of Mg{sub 2}Si:Al raised with pressure to 2–3 GPa peaking in the maximum the values as high as about 8 × 10{sup −3} W/(K{sup 2}m) and then gradually decreased with further compression. Raman spectroscopy studies indicated the crossovers near ∼5–7 and ∼11–12 GPa that are likely related to phase transitions. The data gathered suggest that Mg{sub 2}Si:Al is metallized under moderate pressures between ∼5 and 12 GPa.

  8. Thermoelectric properties of IV–VI-based heterostructures and superlattices

    SciTech Connect

    Borges, P.D.; Petersen, J.E.; Scolfaro, L.; Leite Alves, H.W.; Myers, T.H.

    2015-07-15

    Doping in a manner that introduces anisotropy in order to reduce thermal conductivity is a significant focus in thermoelectric research today. By solving the semiclassical Boltzmann transport equations in the constant scattering time (τ) approximation, in conjunction with ab initio electronic structure calculations, within Density Functional Theory, we compare the Seebeck coefficient (S) and figure of merit (ZT) of bulk PbTe to PbTe/SnTe/PbTe heterostructures and PbTe doping superlattices (SLs) with periodically doped planes. Bismuth and Thallium were used as the n- and p-type impurities, respectively. The effects of carrier concentration are considered via chemical potential variation in a rigid band approximation. The impurity bands near the Fermi level in the electronic structure of PbTe SLs are of Tl s- and Bi p-character, and this feature is independent of the doping concentration or the distance between impurity planes. We observe the impurity bands to have a metallic nature in the directions perpendicular to the doping planes, yet no improvement on the values of ZT is found when compared to bulk PbTe. For the PbTe/SnTe/PbTe heterostructures, the calculated S presents good agreement with recent experimental data, and an anisotropic behavior is observed for low carrier concentrations (n<10{sup 18} cm{sup −3}). A large value of ZT{sub ||} (parallel to the growth direction) of 3.0 is predicted for n=4.7×10{sup 18} cm{sup −3} and T=700 K, whereas ZT{sub p} (perpendicular to the growth direction) is found to peak at 1.5 for n=1.7×10{sup 17} cm{sup −3}. Both electrical conductivity enhancement and thermal conductivity reduction are analyzed. - Graphical abstract: Figure of merit for PbTe/SnTe/PbTe heterostructure along the [0 0 1] direction, P.D. Borges, J.E. Petersen, L. Scolfaro, H.W. Leite Alves, T.H. Myers, Improved thermoelectric properties of IV–VI-based heterostructures and superlattices. - Highlights: • Thermoelectric properties of IV

  9. The Study of the Thermoelectric Properties of Phase Change Materials

    NASA Astrophysics Data System (ADS)

    Yin, Ming; Abdi, Mohammed; Noimande, Zibusisu; Mbamalu, Godwin; Alameeri, Dheyaa; Datta, Timir

    We study thermoelectric property that is electrical phenomena occurring in conjunction with the flow of heat of phase-change materials (PCM) in particular GeSbTe (GST225). From given sets of material parameters, COMSOL Multiphysics heat-transfer module is used to compute maps of temperature and voltage distribution in the PCM samples. These results are used to design an apparatus including the variable temperature sample holder set up. An Arbitrary/ Function generator and a circuit setup is also designed to control the alternation of heaters embedded on the sample holder in order to ensure sequential back and forward flow of heat current from both sides of the sample. Accurate values of potential differences and temperature distribution profiles are obtained in order to compute the Seebeck coefficient of the sample. The results of elemental analysis and imaging studies such as XRD, UV-VIS, EDEX and SEM of the sample are obtained. Factors affecting the thermoelectric properties of phase change memory are also discussed. NNSA/ DOD Consortium for Materials and Energy Studies.

  10. Improvement of thermoelectric properties of alkaline-earth hexaborides

    SciTech Connect

    Takeda, Masatoshi . E-mail: takeda@mech.nagaokaut.ac.jp; Terui, Manabu; Takahashi, Norihito; Ueda, Noriyoshi

    2006-09-15

    Thermoelectric (TE) and transport properties of alkaline-earth hexaborides were examined to investigate the possibility of improvement in their TE performance. As carrier concentration increased, electrical conductivity increased and the absolute value of the Seebeck coefficient decreased monotonically, while carrier mobility was almost unchanged. These results suggest that the electrical properties of the hexaboride depend largely on carrier concentration. Thermal conductivity of the hexaboride was higher than 10 W/m K even at 1073 K, which is relatively high among TE materials. Alloys of CaB{sub 6} and SrB{sub 6} were prepared in order to reduce lattice thermal conductivity. Whereas the Seebeck coefficient and electrical conductivity of the alloys were intermediate between those of CaB{sub 6} and SrB{sub 6} single phases, the thermal conductivities of the alloys were lower than those of both single phases. The highest TE performance was obtained in the vicinity of Ca{sub 0.5}Sr{sub 0.5}B{sub 6}, indicating that alloying is effective in improving the performance. - Graphical abstract: Thermoelectric figure-of-merit, ZT, for (Ca,Sr)B{sub 6} alloys. The highest ZT value of 0.35 at 1073 K was obtained due to effective reduction of thermal conductivity by alloying.

  11. 46 CFR 54.25-20 - Low temperature operation-ferritic steels with properties enhanced by heat treatment (modifies...

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... section VIII of the ASME Boiler and Pressure Vessel Code (incorporated by reference; see 46 CFR 54.01-1... 46 Shipping 2 2010-10-01 2010-10-01 false Low temperature operation-ferritic steels with... VESSELS Construction With Carbon, Alloy, and Heat Treated Steels § 54.25-20 Low temperature...

  12. 46 CFR 54.25-20 - Low temperature operation-ferritic steels with properties enhanced by heat treatment (modifies...

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... section VIII of the ASME Boiler and Pressure Vessel Code (incorporated by reference; see 46 CFR 54.01-1... 46 Shipping 2 2011-10-01 2011-10-01 false Low temperature operation-ferritic steels with... VESSELS Construction With Carbon, Alloy, and Heat Treated Steels § 54.25-20 Low temperature...

  13. 46 CFR 54.25-20 - Low temperature operation-ferritic steels with properties enhanced by heat treatment (modifies...

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... section VIII of the ASME Boiler and Pressure Vessel Code (incorporated by reference; see 46 CFR 54.01-1... 46 Shipping 2 2013-10-01 2013-10-01 false Low temperature operation-ferritic steels with... VESSELS Construction With Carbon, Alloy, and Heat Treated Steels § 54.25-20 Low temperature...

  14. 46 CFR 54.25-20 - Low temperature operation-ferritic steels with properties enhanced by heat treatment (modifies...

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... section VIII of the ASME Boiler and Pressure Vessel Code (incorporated by reference; see 46 CFR 54.01-1... 46 Shipping 2 2014-10-01 2014-10-01 false Low temperature operation-ferritic steels with... VESSELS Construction With Carbon, Alloy, and Heat Treated Steels § 54.25-20 Low temperature...

  15. 46 CFR 54.25-20 - Low temperature operation-ferritic steels with properties enhanced by heat treatment (modifies...

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... section VIII of the ASME Boiler and Pressure Vessel Code (incorporated by reference; see 46 CFR 54.01-1... 46 Shipping 2 2012-10-01 2012-10-01 false Low temperature operation-ferritic steels with... VESSELS Construction With Carbon, Alloy, and Heat Treated Steels § 54.25-20 Low temperature...

  16. Estimating Energy Conversion Efficiency of Thermoelectric Materials: Constant Property Versus Average Property Models

    NASA Astrophysics Data System (ADS)

    Armstrong, Hannah; Boese, Matthew; Carmichael, Cody; Dimich, Hannah; Seay, Dylan; Sheppard, Nathan; Beekman, Matt

    2016-08-01

    Maximum thermoelectric energy conversion efficiencies are calculated using the conventional "constant property" model and the recently proposed "cumulative/average property" model (Kim et al. in Proc Natl Acad Sci USA 112:8205, 2015) for 18 high-performance thermoelectric materials. We find that the constant property model generally predicts higher energy conversion efficiency for nearly all materials and temperature differences studied. Although significant deviations are observed in some cases, on average the constant property model predicts an efficiency that is a factor of 1.16 larger than that predicted by the average property model, with even lower deviations for temperature differences typical of energy harvesting applications. Based on our analysis, we conclude that the conventional dimensionless figure of merit ZT obtained from the constant property model, while not applicable for some materials with strongly temperature-dependent thermoelectric properties, remains a simple yet useful metric for initial evaluation and/or comparison of thermoelectric materials, provided the ZT at the average temperature of projected operation, not the peak ZT, is used.

  17. Effect of Ag doping and annealing on thermoelectric properties of PbTe

    SciTech Connect

    Bala, Manju Tripathi, T. S.; Avasthi, D. K.; Asokan, K.; Gupta, Srashti

    2015-06-24

    The present study reveals that annealing Ag doped PbTe thin films enhance thermoelectric properties. Phase formation was identified by using X-ray diffraction measurement. Annealing increases the crystallinity of both undoped and Ag doped PbTe. Electrical resistivity and thermoelectric power measurements are done using four probe and bridge method respectively. The increase in thermoelectric power of Ag doped PbTe is 29 % in comparison to undoped PbTe and it further increases to 34 % after annealing at 250{sup o} C for 1 hour whereas thermoelectric power increases by 14 % on annealing undoped PbTe thin films at same temperature.

  18. Low Temperature Sensing Properties of a Nano Hybrid Material Based on ZnO Nanotetrapods and Titanyl Phthalocyanine

    PubMed Central

    Coppedè, Nicola; Villani, Marco; Mosca, Roberto; Iannotta, Salvatore; Zappettini, Andrea; Calestani, Davide

    2013-01-01

    ZnO nanotetrapods have recently been exploited for the realization of high-sensitivity gas sensors, but they are affected by the typical drawbacks of metal-oxides, i.e., poor selectivity and a relatively high working temperature. On the other hand, it has been also demonstrated that the combined use of nanostructured metal oxides and organic molecules can improve the gas sensing performance sensitivity or selectivity, even at lower temperatures. A gas sensor device, based on films of interconnected ZnO nanotetrapods properly functionalized by titanyl phthalocyanine (TiOPc), has been realized in order to combine the high surface to volume ratio and structural stability of the crystalline ZnO nanostructures with the enhanced sensitivity of the semiconducting TiOPc molecule, especially at low temperature. The electronic properties of the resulting nanohybrid material are different from those of each single component. The response of the hybrid nanostructure towards different gases has been compared with that of ZnO nanotetrapod without functionalization in order to highlight the peculiar properties of the hybrid interaction(s). The dynamic response in time has been studied for different gases and temperatures; in particular, an increase in the response to NO2 has been observed, even at room temperature. The formation of localized p-n heterojunctions and the possibility of exchanging charge carriers at the hybrid interface is shown to be crucial for the sensing mechanism. PMID:23486215

  19. Low temperature sensing properties of a nano hybrid material based on ZnO nanotetrapods and titanyl phthalocyanine.

    PubMed

    Coppedè, Nicola; Villani, Marco; Mosca, Roberto; Iannotta, Salvatore; Zappettini, Andrea; Calestani, Davide

    2013-03-13

    ZnO nanotetrapods have recently been exploited for the realization of high-sensitivity gas sensors, but they are affected by the typical drawbacks of metal-oxides, i.e., poor selectivity and a relatively high working temperature. On the other hand, it has been also demonstrated that the combined use of nanostructured metal oxides and organic molecules can improve the gas sensing performance sensitivity or selectivity, even at lower temperatures. A gas sensor device, based on films of interconnected ZnO nanotetrapods properly functionalized by titanyl phthalocyanine (TiOPc), has been realized in order to combine the high surface to volume ratio and structural stability of the crystalline ZnO nanostructures with the enhanced sensitivity of the semiconducting TiOPc molecule, especially at low temperature. The electronic properties of the resulting nanohybrid material are different from those of each single component. The response of the hybrid nanostructure towards different gases has been compared with that of ZnO nanotetrapod without functionalization in order to highlight the peculiar properties of the hybrid interaction(s). The dynamic response in time has been studied for different gases and temperatures; in particular, an increase in the response to NO2 has been observed, even at room temperature. The formation of localized p-n heterojunctions and the possibility of exchanging charge carriers at the hybrid interface is shown to be crucial for the sensing mechanism.

  20. Theoretical and Experimental Investigation on the Low Temperature Properties of the NbCr{sub 2} Laves Phase

    SciTech Connect

    Thoma, D.J.; Chu, F.; Chen, K.C.; Kotula, P.G.; Mitchell, T.E.; Wills, J.M.; Ormeci, A.; Chen, S.P.; Albers, R.C.

    1999-06-03

    This is the final report of a three-year, Laboratory Directed Research and Development (LDRD) project at Los Alamos National Laboratory (LANL). The goal of the project was to develop methodologies in which to define and improve the properties of NbCr{sub 2} so that the high temperature structural applications of alloys based upon this would not be limited by the low-temperature brittle behavior of the intermetallic. We accomplished this task by (1) understanding the defect structure and deformation mechanisms in Laves phases, (2) electronic and geometric contributions to phase stability and alloying behavior, and (3) novel processing of dual phase (Laves/bcc) structures. As a result alloys with properties that in many cases surpass superalloys were developed. For example, we have tailored alloy design strategies and processing routes in a metal alloy to achieve ambient temperature ultimate strengths of 2.35 GPa as well as ultimate strengths of 1.5 GPa at 1000 C. This results i n one of the strongest metal alloys that currently exist, while still having deformability at room temperature.

  1. Thermoelectric properties of chalcopyrite type CuGaTe{sub 2} and chalcostibite CuSbS{sub 2}

    SciTech Connect

    Kumar Gudelli, Vijay; Kanchana, V.; Vaitheeswaran, G.; Svane, A.; Christensen, N. E.

    2013-12-14

    Electronic and transport properties of CuGaTe{sub 2}, a hole-doped ternary copper based chalcopyrite type semiconductor, are studied using calculations within the Density Functional Theory and solving the Boltzmann transport equation within the constant relaxation time approximation. The electronic band structures are calculated by means of the full-potential linear augmented plane wave method, using the Tran-Blaha modified Becke-Johnson potential. The calculated band gap of 1.23 eV is in agreement with the experimental value of 1.2 eV. The carrier concentration- and temperature dependent thermoelectric properties of CuGaTe{sub 2} are derived, and a figure of merit of zT = 1.69 is obtained at 950 K for a hole concentration of 3.7·10{sup 19} cm{sup −3}, in agreement with a recent experimental finding of zT = 1.4, confirming that CuGaTe{sub 2} is a promising material for high temperature thermoelectric applications. The good thermoelectric performance of p-type CuGaTe{sub 2} is associated with anisotropic transport from a combination of heavy and light bands. Also for CuSbS{sub 2} (chalcostibite), a better performance is obtained for p-type than for n-type doping. The variation of the thermopower as a function of temperature and concentration suggests that CuSbS{sub 2} will be a good thermoelectric material at low temperatures, similarly to the isostructural CuBiS{sub 2} compound.

  2. High-accuracy direct ZT and intrinsic properties measurement of thermoelectric couple devices.

    PubMed

    Kraemer, D; Chen, G

    2014-04-01

    Advances in thermoelectric materials in recent years have led to significant improvements in thermoelectric device performance and thus, give rise to many new potential applications. In order to optimize a thermoelectric device for specific applications and to accurately predict its performance ideally the material's figure of merit ZT as well as the individual intrinsic properties (Seebeck coefficient, electrical resistivity, and thermal conductivity) should be known with high accuracy. For that matter, we developed two experimental methods in which the first directly obtains the ZT and the second directly measures the individual intrinsic leg properties of the same p/n-type thermoelectric couple device. This has the advantage that all material properties are measured in the same sample direction after the thermoelectric legs have been mounted in the final device. Therefore, possible effects from crystal anisotropy and from the device fabrication process are accounted for. The Seebeck coefficients, electrical resistivities, and thermal conductivities are measured with differential methods to minimize measurement uncertainties to below 3%. The thermoelectric couple ZT is directly measured with a differential Harman method which is in excellent agreement with the calculated ZT from the individual leg properties. The errors in both the directly measured and calculated thermoelectric couple ZT are below 5% which is significantly lower than typical uncertainties using commercial methods. Thus, the developed technique is ideal for characterizing assembled couple devices and individual thermoelectric materials and enables accurate device optimization and performance predictions. We demonstrate the methods by measuring a p/n-type thermoelectric couple device assembled from commercial bulk thermoelectric Bi2Te3 elements in the temperature range of 30 °C-150 °C and discuss the performance of the couple thermoelectric generator in terms of its efficiency and materials

  3. Thermoelectric and Magneto-Thermoelectric Properties of Ga-DOPED ZnO Thin Films by RF Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Liu, H.; Fang, L.; Wu, F.; Tian, D. X.; Li, W. J.; Lu, Y.; Kong, C. Y.; Zhang, S. F.

    2014-04-01

    Zn(1-x)GaxO thin films (x = 0.01, 0.03, 0.05, 0.07 named as GZO1, GZO2, GZO3, GZO4, respectively) were deposited on glass substrates by RF magnetron sputtering. The crystal structure, electrical, thermoelectric and magneto-thermoelectric properties of GZO films were investigated. It is found that all the GZO films are polycrystalline and preferentially oriented in the c-axis. The electrical resistivity of GZO films decreased first with increasing Ga doping content before it reached a minimum at x = 0.05, and then increased with further increasing Ga doping content. The magnetic fields (B) ranging from 0 to 1.5 T are perpendicularly applied to the films to study the magneto-thermoelectric properties. It is observed that the absolute values of Seebeck coefficients (|S|) of GZO1, GZO2, GZO3 show marked variation with magnetic field and obtain the maximum value at B = 0.5 T. Whereas the |S| value of GZO4 fluctuates slightly with magnetic field and reaches its peak at B = 1.0 T. The magneto-thermoelectric properties are analyzed and we propose that this behavior is mainly attributed to the effect of magnetic field on the electron transport.

  4. Thermoelectric Properties of Carbon nanohybrids Incorporated Polymer Nanocomposites

    NASA Astrophysics Data System (ADS)

    Zhang, Kun; Wang, Shiren

    2015-03-01

    In this work, non-covalently functionalized graphene with fluorinated fullerene (F-C60) by π- π stacking was integrated into poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). F-C60 as a p-type organic semiconductor with deep highest occupied molecular orbital (HOMO) level modulates the band structure of reduced graphene oxide (rGO). Altering HOMO levels of rGO has been achieved by changing the ratio between rGO and F-C60. Incorporating of rGO/F-C60 nanohybrids into highly conductivity metallic PEDOT:PSS formed Schottky barrier to selectively scatter low-energy carriers. Enhanced thermoelectric power factor of rGO/F-C60/PEDOT:PSS nanocomposites were observed with the optimized power factor of 83.2 μW/m.K2, which is 19 times of that of the highly conductive PEDOT:PSS. Additionally, the F-C60 nanoparticles on rGO surfaces hinder thermal transport by phonon scattering, resulting in the synergistic effect on enhancing thermoelectric properties. As a result, a figure of merit (ZT) of 0.10 was achieved. NSF

  5. Tuning thermoelectric properties of graphene/boron nitride heterostructures.

    PubMed

    Algharagholy, Laith A; Al-Galiby, Qusiy; Marhoon, Haider A; Sadeghi, Hatef; Abduljalil, Hayder M; Lambert, Colin J

    2015-11-27

    Using density functional theory combined with a Green's function scattering approach, we examine the thermoelectric properties of hetero-nanoribbons formed from alternating lengths of graphene and boron nitride. In such structures, the boron nitride acts as a tunnel barrier, which weakly couples states in the graphene, to form mini-bands. In un-doped nanoribbons, the mini bands are symmetrically positioned relative to the Fermi energy and do not enhance thermoelectric performance significantly. In contrast, when the ribbons are doped by electron donating or electron accepting adsorbates, the thermopower S and electronic figure of merit are enhanced and either positive or negative thermopowers can be obtained. In the most favourable case, doping with the electron donor tetrathiafulvalene increases the room-temperature thermopower to -284 μv K(-1) and doping by the electron acceptor tetracyanoethylene increases S to 210 μv K(-1). After including both electron and phonon contributions to the thermal conductance, figures of merit ZT up to of order 0.9 are obtained.

  6. Tuning the thermoelectric properties of metallo-porphyrins.

    PubMed

    Al-Galiby, Qusiy H; Sadeghi, Hatef; Algharagholy, Laith A; Grace, Iain; Lambert, Colin

    2016-01-28

    We investigated the thermoelectric properties of metalloporphyrins connected by thiol anchor groups to gold electrodes. By varying the transition metal-centre over the family Mn, Co, Ni, Cu, Fe, and Zn we are able to tune the molecular energy levels relative to the Fermi energy of the electrodes. The resulting single-molecule room-temperature thermopowers range from almost zero for Co and Cu centres, to +80 μV K(-1) and +230 μV K(-1) for Ni and Zn respectively. In contrast, the thermopowers with Mn(II) or Fe(II) metal centres are negative and lie in the range -280 to -260 μV K(-1). Complexing these with a counter anion to form Fe(III) and Mn(III) changes both the sign and magnitude of their thermopowers to +218 and +95 respectively. The room-temperature power factors of Mn(II), Mn(III), Fe(III), Zn and Fe(II) porphyrins are predicted to be 5.9 × 10(-5) W m(-1) K(-2), 5.4 × 10(-4) W m(-1) K(-2), 9.5 × 10(-4) W m(-1) K(-2), 1.6 × 10(-4) W m(-1) K(-2) and 2.3 × 10(-4) W m(-1) K(-2) respectively, which makes these attractive materials for molecular-scale thermoelectric devices.

  7. Diameter Dependent Thermoelectric Properties of Individual SnTe Nanowires

    NASA Astrophysics Data System (ADS)

    Xu, E. Z.; Li, Z.; Martinez, J.; Sinitsyn, N.; Htoon, H.; Li, N.; Swartzentruber, B.; Hollingsworth, J.; Wang, J.; Zhang, S. X.

    2015-03-01

    Tin telluride (SnTe), a newly discovered topological crystalline insulator, has recently been suggested to be a promising thermoelectric material. In this work, we report on a systematic study of the thermoelectric properties of individual single-crystalline SnTe nanowires with different diameters. Measurements of thermopower, electrical conductivity and thermal conductivity were carried out on the same nanowires over a temperature range of 25 - 300 K. While the electrical conductivity does not show a strong diameter dependence, we found that the thermopower increases by a factor of two when the nanowire diameter is decreased from 913 nm to 218 nm. The thermal conductivity of the measured NWs is lower than that of the bulk SnTe, which may be attributed to the enhanced phonon - surface boundary scattering and phonon-defect scattering. We further calculated the temperature dependent figure of merit ZT for each individual nanowire. This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science by Los Alamos National Laboratory (Contract DE-AC52-06NA25396) and Sandia National Laboratories (Contract DE-AC04-94AL85000). We acknowledge support by the Los Alamos LDRD program.

  8. Tuning thermoelectric properties of graphene/boron nitride heterostructures

    NASA Astrophysics Data System (ADS)

    Algharagholy, Laith A.; Al-Galiby, Qusiy; Marhoon, Haider A.; Sadeghi, Hatef; Abduljalil, Hayder M.; Lambert, Colin J.

    2015-11-01

    Using density functional theory combined with a Green’s function scattering approach, we examine the thermoelectric properties of hetero-nanoribbons formed from alternating lengths of graphene and boron nitride. In such structures, the boron nitride acts as a tunnel barrier, which weakly couples states in the graphene, to form mini-bands. In un-doped nanoribbons, the mini bands are symmetrically positioned relative to the Fermi energy and do not enhance thermoelectric performance significantly. In contrast, when the ribbons are doped by electron donating or electron accepting adsorbates, the thermopower S and electronic figure of merit are enhanced and either positive or negative thermopowers can be obtained. In the most favourable case, doping with the electron donor tetrathiafulvalene increases the room-temperature thermopower to -284 μv K-1 and doping by the electron acceptor tetracyanoethylene increases S to 210 μv K-1. After including both electron and phonon contributions to the thermal conductance, figures of merit ZT up to of order 0.9 are obtained.

  9. Thermoelectric properties of iron-based superconductors and parent compounds

    NASA Astrophysics Data System (ADS)

    Pallecchi, Ilaria; Caglieris, Federico; Putti, Marina

    2016-07-01

    Herewith, we review the available experimental data of thermoelectric transport properties of iron-based superconductors and parent compounds. We discuss possible physical mechanisms into play in determining the Seebeck effect, from whence one can extract information about Fermi surface reconstruction and Lifshitz transitions, multiband character, coupling of charge carriers with spin excitations and its relevance in the unconventional superconducting pairing mechanism, nematicity, quantum critical fluctuations close to the optimal doping for superconductivity, correlation. Additional information is obtained from the analysis of the Nernst effect, whose enhancement in parent compounds must be related partially to multiband transport and low Fermi level, but mainly to the presence of Dirac cone bands at the Fermi level. In the superconducting compounds, large Nernst effect in the normal state is explained in terms of fluctuating precursors of the spin density wave state, while in the superconducting state it mirrors the usual vortex liquid dissipative regime. A comparison between the phenomenology of thermoelectric behavior of different families of iron-based superconductors and parent compounds allows to evidence the key differences and analogies, thus providing clues on the rich and complex physics of these fascinating unconventional superconductors.

  10. Microstructure and magnetic properties of low-temperature sintered CoTi-substituted barium ferrite for LTCC application

    NASA Astrophysics Data System (ADS)

    Chen, Daming; Liu, Yingli; Li, Yuanxun; Zhong, Wenguo; Zhang, Huaiwu

    2011-11-01

    In this article, the influences of the BaCu(B 2O 5) (BCB) additive on sintering behavior, structure and magnetic properties of iron deficient M-type barium ferrite Ba(CoTi) xFe 11.8-2 xO 19 (BaM) have been investigated. It is found that the maximum sintered densities of BaM change from 86% to 94% as the BCB content varies from 1 to 4 wt%. Single-phase BaM can be detected by the XRD analysis in the sample with 3 wt% BCB sintered at 900 °C, and the microstructure is hexagonal platelets with few intragranular pores. This is attributed to the formation of the BCB liquid phase. Meanwhile, the experimental results illuminate that the CoTi ions prefer to occupy the 4f2 and 2b sites and the magnetic properties depend on the amount of CoTi-substitution. In addition, the chemical compatibility between BaM and silver paste is also investigated; it can be seen that BaM is co-fired well with the silver paste and no other second phase is observed. Especially, the 3 wt% BCB-added Ba(CoTi) 0.9Fe 11O 19 sintered at 900 °C has good properties with the sintered density of 4.9 g/cm 3, saturation magnetization of 49.7 emu/g and coercivity of 656.6 Oe. These results indicate that it is cost effective in the production of Low Temperature Co-fired Ceramics (LTCC) multilayer devices.

  11. Dielectric Dispersion, Diffuse Phase Transition, and Electrical Properties of BCT-BZT Ceramics Sintered at a Low-Temperature

    NASA Astrophysics Data System (ADS)

    Tian, Yongshang; Gong, Yansheng; Meng, Dawei; Li, Yuanjian; Kuang, Boya

    2015-08-01

    Lead-free ceramics 0.50Ba0.9Ca0.1TiO3-0.50BaTi1- x Zr x O3 (BCT-BZT) were prepared via sintering BCT and BZT nanoparticles, which were synthesized using a modified Pechini polymeric precursor method, at a low temperature of 1260°C. The relative densities of the ceramics prepared with different zirconium contents ( x) were all above 95.3%, reaching a maximum of 97% when x = 0.08. X-ray diffraction results confirmed the onset of phase transformation from orthorhombic to rhombohedral symmetry with increasing zirconium contents, and the polymorphic phase transition was observed at x = 0.10. The dielectric dispersion, diffuse phase transition (DPT), and relaxor-like ferroelectric characteristics as a function of zirconium content were thoroughly studied. Optimum physical properties, remnant polarization ( P r) = 16.4 μC/cm2, piezoelectric constant ( d 33) = ~240 pC/N, and electromechanical coupling factor ( k p) = 0.22, were obtained at x = 0.10. The findings of the current DPT behavior study of BCT-BZT ceramics are believed to be insightful to the development of ferroelectric materials.

  12. Low temperature magnetic properties and microstructure of rapidly solidified Nd-Fe(-Co) and Sm-Co(-Fe) Laves compounds

    NASA Astrophysics Data System (ADS)

    Yang, C. J.; Choi, S. D.; Lee, W. Y.

    1991-04-01

    Laves phases of NdFe2, Nd(Fe0.5Co0.5)2, SmCo2, and Sm(Fe0.5Co0.5)2 stoichiometries were prepared using a rapid solidification technology. Low temperature magnetic properties show ferromagnetic behavior for Nd(Fe0.5Co0.5)2, SmCo2, and Sm(Fe0.5Co0.5)2. Laves compounds, while a sort of antiferromagnetism has been suggested for the supposed NdFe2 compound. This rapidly solidified NdFe2 alloy is believed to consist of an unstable rhombohedral NdFe7 phase plus fine particles of a Nd-rich phase. Some evidence of a phase transition from the mixture of unstable NdFe7 compound plus Nd-rich to Nd2Fe17 plus Fe-Nd-O phase are obtained after annealing the NdFe2 alloy. The ternary Laves compound, Sm(Fe0.5Co0.5)2, exhibits a high coercivity of 4 kOe at room temperature with a Curie temperature of 400 °C, while the Nd(Fe0.5Co0.5)2 compound shows a magnetic moment of 3.0-3.5 μB.

  13. Low temperature thermoelastic and structural properties of LaGaO3 perovskite in the Pbnm phase

    NASA Astrophysics Data System (ADS)

    Knight, Kevin S.

    2012-10-01

    The thermoelastic and structural properties of LaGaO3 perovskite have been studied using high resolution neutron diffractometry at 158 temperatures between 11 K and 548 K. Data collected in 2 K intervals between 410 K and 430 K show no evidence for an intermediate phase between the low temperature phase in space group Pbnm and the high temperature phase in space group F3¯2/n. From a simultaneous fit of the unit cell volume and the isochoric heat capacity, the phonon density of states in the Pbnm phase is shown to be approximated by a two-term Debye model, with characteristic temperatures 294(1) K and 831(1) K. Vibrational Debye temperatures, determined from fitting the temperature variation of the atomic displacement parameters, show the cations to be more associated with the lower characteristic temperature, whilst that for the anions, is closer to the higher characteristic temperature. Structural parameters are presented as the amplitudes of the seven symmetry-adapted basis-vectors of the aristotype phase, and a structural basis for the temperature-dependence of the bond lengths is outlined. The phase transition in both temperature and pressure arises when a non-bonded La-O distance approaches the La coordination sphere.

  14. Electro-Optical Properties of Low-Temperature Growth Indium-tin-oxide Nanowires Using Polystyrene Spheres as Catalyst

    NASA Astrophysics Data System (ADS)

    Li, Qiang; Gong, Zhina; Li, Yufeng; Liu, Hao; Feng, Lungang; Liu, Shuo; Yun, Feng

    2016-03-01

    Polystyrene sphere was chosen as a catalyst to fabricate indium-tin-oxide (ITO) nanowires (NWs) with a low-temperature (280-300 °C) electron-beam deposition process, bearing high purity. The ITO NWs with diameter of 20-50 nm and length of ~2 um were obtained. X-ray diffraction and high-resolution transmission electron microscope show high crystal quality. The transmittance is above 90 % at a wavelength 400 nm or more, superior to the ITO bulk film. Owing to the unique morphology gradient of the ITO NWs, the effective refractive index of ITO NWs film is naturally graded from the bottom to the top. The ITO NWs have been used on LED devices ( λ = 450 nm), which improved the light output power by 31 % at the current of 150 mA comparing to the one without NWs and did not deteriorate the electrical properties. Such ITO NWs open opportunity in LED devices to further improve light extraction efficiency.

  15. Electro-Optical Properties of Low-Temperature Growth Indium-tin-oxide Nanowires Using Polystyrene Spheres as Catalyst.

    PubMed

    Li, Qiang; Gong, Zhina; Li, Yufeng; Liu, Hao; Feng, Lungang; Liu, Shuo; Yun, Feng

    2016-12-01

    Polystyrene sphere was chosen as a catalyst to fabricate indium-tin-oxide (ITO) nanowires (NWs) with a low-temperature (280-300 °C) electron-beam deposition process, bearing high purity. The ITO NWs with diameter of 20-50 nm and length of ~2 um were obtained. X-ray diffraction and high-resolution transmission electron microscope show high crystal quality. The transmittance is above 90 % at a wavelength 400 nm or more, superior to the ITO bulk film. Owing to the unique morphology gradient of the ITO NWs, the effective refractive index of ITO NWs film is naturally graded from the bottom to the top. The ITO NWs have been used on LED devices (λ = 450 nm), which improved the light output power by 31 % at the current of 150 mA comparing to the one without NWs and did not deteriorate the electrical properties. Such ITO NWs open opportunity in LED devices to further improve light extraction efficiency.

  16. Electro-Optical Properties of Low-Temperature Growth Indium-tin-oxide Nanowires Using Polystyrene Spheres as Catalyst.

    PubMed

    Li, Qiang; Gong, Zhina; Li, Yufeng; Liu, Hao; Feng, Lungang; Liu, Shuo; Yun, Feng

    2016-12-01

    Polystyrene sphere was chosen as a catalyst to fabricate indium-tin-oxide (ITO) nanowires (NWs) with a low-temperature (280-300 °C) electron-beam deposition process, bearing high purity. The ITO NWs with diameter of 20-50 nm and length of ~2 um were obtained. X-ray diffraction and high-resolution transmission electron microscope show high crystal quality. The transmittance is above 90 % at a wavelength 400 nm or more, superior to the ITO bulk film. Owing to the unique morphology gradient of the ITO NWs, the effective refractive index of ITO NWs film is naturally graded from the bottom to the top. The ITO NWs have been used on LED devices (λ = 450 nm), which improved the light output power by 31 % at the current of 150 mA comparing to the one without NWs and did not deteriorate the electrical properties. Such ITO NWs open opportunity in LED devices to further improve light extraction efficiency. PMID:26956600

  17. Low temperature magnetic properties of geometrically frustrated Gd2Sn2O7 and Gd2Ti2O7

    NASA Astrophysics Data System (ADS)

    Bonville, P.; Hodges, J. A.; Ocio, M.; Sanchez, J. P.; Vulliet, P.; Sosin, S.; Braithwaite, D.

    2003-11-01

    We have examined the low temperature magnetic properties of the geometrically frustrated antiferromagnetic pyrochlores Gd2Sn2O7 and Gd2Ti2O7 using specific heat, 155Gd Mössbauer, magnetic susceptibility and magnetization measurements. For Gd2Sn2O7, the specific heat evidences a single, strongly first order magnetic transition near 1.0 K in Gd2Ti2O7, we confirm the presence of both the transition near 1.0 K and the second transition near 0.75 K. Below 1 K, magnetic irreversibilities are present in both compounds, but their signature (the difference between the FC and ZFC branches) is more marked in Gd2Sn2O7. At 0.03 K in each compound, the Mössbauer data show that the four Gd3+ of a tetrahedron carry moments of equal sizes and on a frequency scale of 120 × 106 s-1 each is oriented perpendicular to the local \\langle 111 \\rangle direction. In Gd2Ti2O7, the Mössbauer data also indicates that the transition at 0.75 K involves a small change in the magnetic structure.

  18. Structural, electrical, and low-temperature dielectric properties of sol-gel derived SrTiO3 thin films

    NASA Astrophysics Data System (ADS)

    Thomas, Reji; Dube, D. C.; Kamalasanan, M. N.; Chandra, Subhas; Bhalla, A. S.

    1997-11-01

    Strontium titanate sol was prepared using strontium ethyl haxanoate and titanium isopropoxide. The sol was then spin coated on fused silica, p-type single-crystal silicon wafers (100) and stainless-steel substrates and annealed to give polycrystalline, transparent, and crack-free films. The surface morphology and structural properties of the films were studied using scanning electron microscopy and x-ray diffraction, respectively, and differential thermal analysis was used to observe structural transition. The dielectric measurements were conducted on films with metal-insulator-metal and metal-insulator-semiconductor configurations. Capacitance-voltage (C-V) measurements were carried out and the effect of the annealing temperature was studied. The dielectric constant and loss tangent at 1 MHz at room temperature were found to be 105 and 0.02, respectively, for 1.1 μm thick films. These measurements were also carried out at low temperatures down to 20 K. There are indications for a phase transition from a cubic perovskite to tetragonal perovskite structure at about 100 K where the tan δ shows some fluctuation, a characteristic of such transitions. The absence of a peak in the dielectric constant and the absence of hysteresis below the transition temperature have been explained on the basis of the low value of the tetragonal distortion (c/a=1.003) reported on bulk material.

  19. Magnetic and thermoelectric properties of B-substituted NaCoO2

    NASA Astrophysics Data System (ADS)

    Altin, Emine; Oz, Erdinc; Demirel, Serkan; Bayri, Ali

    2015-06-01

    We report the structural, electrical, thermal and magnetic properties of NaCo1- x B x O2 from 300 K down to 5 K. XRD analysis shows that B ions successfully incorporate in the crystal structure for x < 0.25. The resistivity of the samples increases with increasing B content and the transport mechanism change for x > 0.5. The highest thermopower value is obtained for x = 0.5 sample, and the thermoelectric behavior at low temperature is explained by Mott approximation. The experimentally obtained thermal conductivity data are analyzed by this model including the carrier thermal term, κ c, and the lattice thermal conductivity term, κ L. We found that phonon-phonon interaction and point defect contribution to κ are affected by the B content and the temperature. The Co valance states are analyzed by Heike formula, and the effective magnetic moment is determined by these values. The χ- T curves of the samples are fitted by Curie-Weiss law, and the obtained μ eff values match well with the theoretically calculated values (0.9 μB/Co). We observed a strong correlation between magnetic properties and thermopower.

  20. Thermoelectric properties of cobalt antimonide>-based skutterudites

    NASA Astrophysics Data System (ADS)

    Yang, Jian

    Solid state cooling and power generation based on thermoelectric principles are regarded as one of the technologies with the potential of solving the current energy crisis. Thermoelectric devices could be widely used in waste heat recovery, small scale power generation and refrigeration. It has no moving parts and is environmental friendly. The limitation to its application is due to its low efficiency. Most of the current commercialized thermoelectric materials have figure of merit (ZT) around 1. To be comparable with kitchen refrigerator, ZT≃ 3 is required at room temperature. Skutterudites have emerged as member of the novel materials, which potentially have a higher ZT. In the dissertation, my investigation will be focused on the optimization of CoSb3-based skutterudites. Starting with Co and Sb elements, CoSb3 will form through a high energy ball mill. Unfortunately, even after 20 hours, only a small percentage of the powders have transformed in into CoSb3. Then the powders will be compacted into bulk samples by DC-controlled hot press. CoSb3 single phase will form after press. Characterization of the structure and thermoelectric properties will be presented with details. The effects of synthesis conditions on thermoelectric properties of skutterudites were studied and discussed. Several possible methods of improving the ZT of N type skutterudites were applied. The highest obtained ZT thus far is ˜1.2 from Yb doped CoSb3. For a group of samples with nominal composition YbxCo4Sb12, the increased Yb concentration in our samples not only enhanced the power factor due to electron doping effect but also decreased the thermal conductivity due to a stronger rattling effect. In addition, the increased grain boundary density per unit volume due to the small grains in our bulk skutterudite materials may have also helped to enhance the phonon scattering and thus to reduce the thermal conductivity. Single and double doping methods with different combinations were also

  1. Nanostructured semiconductors for thermoelectric energy conversion: Synthesis and transport properties

    NASA Astrophysics Data System (ADS)

    Sahoo, Pranati

    Increasing energy demands and decreasing natural energy resources have sparked search for alternative clean and renewable energy sources. For instance, currently there is a tremendous interest in thermoelectric and photovoltaic solar energy production technologies. Half-Heusler (HH) alloys are among the most popular material systems presently under widespread investigations for high temperature thermoelectric energy conversion. Approaches to increase the thermoelectric figure of merit (ZT) of HH range from (1) chemical substitution of atoms with different masses within the same atomic position in the crystal structure to optimize carrier concentration and enhance phonon scattering via mass fluctuation and (2) embedding secondary phonon scattering centers in the matrix (nanostructuring) to further reduce thermal conductivity. This work focuses on three material systems. The first part describes the synthesis and properties (thermal conductivity, electrical conductivity, magnetic) of various oxide nanostructures (NiO, Co3O4) which were subsequently used as inclusion phases in a HH matrix to reduce the thermal conductivity. Detailed reviews of the past efforts along with the current effort to optimize synthetic routes are presented. The effects of the synthesis conditions on the thermoelectric properties of compacted pellets of NiO and Co3O4 are also discussed. The second part of the work discusses the development of synthetic strategies for the fabrication of p-type and n-type bulk nanostructured thermoelectric materials made of a half-Heusler matrix based on (Ti,Hf)CoSb, containing nanostructures with full-Heusler (FH) compositions and structures coherently embedded inside the half-Heusler matrix. The role of the nanostructures in the regulation of phonon and charge carrier transports within the half-heusler matrix is extensively discussed by combining transport data and electron microscopy images. It was found that the FH nanoinclusions form staggered

  2. Physical Property Evaluation of ZnO Thin Film Fabricated by Low-Temperature Process for Flexible Transparent TFT.

    PubMed

    Khafe, Adie Bin Mohd; Watanabe, Hiraku; Yamauchi, Hiroshi; Kuniyoshi, Shigekazu; Iizuka, Masaaki; Sakai, Masatoshi; Kudo, Kazuhiro

    2016-04-01

    The usual silicon-based display back planes require fairly high process temperature and thus the development of a low temperature process is needed on flexible plastic substrates. A new type of flexible organic light emitting transistor (OLET) had been proposed and investigated in the previous work. By using ultraviolet/ozone (UV/O3) assisted thermal treatments on wet processed zinc oxide field effect transistor (ZnO-FET), through low-process temperature, ZnO-FETs were fabricated which succeeded to achieve target drain current value and mobility. In this study, physical property evaluation of ZnO was conducted in term of their crystallinity, the increase composition of ZnO formed inside the thin film and the decrease of the carbon impurities originated from aqueous solution of the ZnO itself. The X-ray diffraction (XRD) evaluation showed UV/03 assisted thermal treatment has no obvious effect towards crystallinity of ZnO in the range of low process temperature. Moreover, through X-ray photoelectron spectroscopy (XPS) evaluation and Fourier transform infrared (FT-IR) spectroscopy evaluation, more carbon impurities disappeared from the ZnO thin film and the increase of composition amount of ZnO, when the thin film was subjected to UV/O3 assisted thermal treatment. Therefore, UV/O3 assisted thermal treatment contributed in carbon impurities elimination and accelerate ZnO formation in ZnO thin film, which led to the improvement in the electrical property of ZnO-FET in the low-process temperature. PMID:27451599

  3. Low temperature thermoelastic and structural properties of LaGaO{sub 3} perovskite in the Pbnm phase

    SciTech Connect

    Knight, Kevin S.

    2012-10-15

    The thermoelastic and structural properties of LaGaO{sub 3} perovskite have been studied using high resolution neutron diffractometry at 158 temperatures between 11 K and 548 K. Data collected in 2 K intervals between 410 K and 430 K show no evidence for an intermediate phase between the low temperature phase in space group Pbnm and the high temperature phase in space group F3{sup Macron }2/n. From a simultaneous fit of the unit cell volume and the isochoric heat capacity, the phonon density of states in the Pbnm phase is shown to be approximated by a two-term Debye model, with characteristic temperatures 294(1) K and 831(1) K. Vibrational Debye temperatures, determined from fitting the temperature variation of the atomic displacement parameters, show the cations to be more associated with the lower characteristic temperature, whilst that for the anions, is closer to the higher characteristic temperature. Structural parameters are presented as the amplitudes of the seven symmetry-adapted basis-vectors of the aristotype phase, and a structural basis for the temperature-dependence of the bond lengths is outlined. The phase transition in both temperature and pressure arises when a non-bonded La-O distance approaches the La coordination sphere. - Graphical abstract: The weight fraction of the rhombohedral phase of LaGaO{sub 3} from the onset of the phase transition at 408 K to its completion at 430 K. Highlights: Black-Right-Pointing-Pointer Thermoelastic properties of LaGaO{sub 3} analyzed as a two-term Debye model. Black-Right-Pointing-Pointer Crystal structure and bonding analyzed in terms of symmetry-adapted basis-vectors. Black-Right-Pointing-Pointer Consistency between calorimetric and crystallographic measurements.

  4. Analytic Thermoelectric Couple Modeling: Variable Material Properties and Transient Operation

    NASA Technical Reports Server (NTRS)

    Mackey, Jonathan A.; Sehirlioglu, Alp; Dynys, Fred

    2015-01-01

    To gain a deeper understanding of the operation of a thermoelectric couple a set of analytic solutions have been derived for a variable material property couple and a transient couple. Using an analytic approach, as opposed to commonly used numerical techniques, results in a set of useful design guidelines. These guidelines can serve as useful starting conditions for further numerical studies, or can serve as design rules for lab built couples. The analytic modeling considers two cases and accounts for 1) material properties which vary with temperature and 2) transient operation of a couple. The variable material property case was handled by means of an asymptotic expansion, which allows for insight into the influence of temperature dependence on different material properties. The variable property work demonstrated the important fact that materials with identical average Figure of Merits can lead to different conversion efficiencies due to temperature dependence of the properties. The transient couple was investigated through a Greens function approach; several transient boundary conditions were investigated. The transient work introduces several new design considerations which are not captured by the classic steady state analysis. The work helps to assist in designing couples for optimal performance, and also helps assist in material selection.

  5. A review on the fabrication of polymer-based thermoelectric materials and fabrication methods.

    PubMed

    Kamarudin, Muhammad Akmal; Sahamir, Shahrir Razey; Datta, Robi Shankar; Long, Bui Duc; Mohd Sabri, Mohd Faizul; Mohd Said, Suhana

    2013-01-01

    Thermoelectricity, by converting heat energy directly into useable electricity, offers a promising technology to convert heat from solar energy and to recover waste heat from industrial sectors and automobile exhausts. In recent years, most of the efforts have been done on improving the thermoelectric efficiency using different approaches, that is, nanostructuring, doping, molecular rattling, and nanocomposite formation. The applications of thermoelectric polymers at low temperatures, especially conducting polymers, have shown various advantages such as easy and low cost of fabrication, light weight, and flexibility. In this review, we will focus on exploring new types of polymers and the effects of different structures, concentrations, and molecular weight on thermoelectric properties. Various strategies to improve the performance of thermoelectric materials will be discussed. In addition, a discussion on the fabrication of thermoelectric devices, especially suited to polymers, will also be given. Finally, we provide the challenge and the future of thermoelectric polymers, especially thermoelectric hybrid model. PMID:24324378

  6. A Review on the Fabrication of Polymer-Based Thermoelectric Materials and Fabrication Methods

    PubMed Central

    Kamarudin, Muhammad Akmal; Sahamir, Shahrir Razey; Datta, Robi Shankar; Long, Bui Duc; Mohd Sabri, Mohd Faizul; Mohd Said, Suhana

    2013-01-01

    Thermoelectricity, by converting heat energy directly into useable electricity, offers a promising technology to convert heat from solar energy and to recover waste heat from industrial sectors and automobile exhausts. In recent years, most of the efforts have been done on improving the thermoelectric efficiency using different approaches, that is, nanostructuring, doping, molecular rattling, and nanocomposite formation. The applications of thermoelectric polymers at low temperatures, especially conducting polymers, have shown various advantages such as easy and low cost of fabrication, light weight, and flexibility. In this review, we will focus on exploring new types of polymers and the effects of different structures, concentrations, and molecular weight on thermoelectric properties. Various strategies to improve the performance of thermoelectric materials will be discussed. In addition, a discussion on the fabrication of thermoelectric devices, especially suited to polymers, will also be given. Finally, we provide the challenge and the future of thermoelectric polymers, especially thermoelectric hybrid model. PMID:24324378

  7. Transport and Thermoelectric Properties of Ca3Co4O9 Thin Films

    NASA Astrophysics Data System (ADS)

    Hu, Yufeng; Si, Weidong; Sutter, Eli; Sabatini, Robert

    2005-03-01

    It has been discovered recently that cobaltates have very large thermoelectric power, which shows that cobaltates hold great promise to be potential integrated heating spreading solution, such as thermal management of microprocessors. Among the cobaltates, Ca3Co4O9 and Ca2Co2O5 are exhibiting best thermoelectric properties. The ZT value for these calcium-cobaltates reaches as high as 2.7 at T >= 873 K, which clearly challenges the best conventional thermoelectric materials found in intermetallic compounds, such as Bi2Te3/Sb2Te3 alloys. The purpose of this work is to study the transport and thermoelectric properties of Ca3Co4O9 thin films. We have successfully grown the Ca3Co4O9 c-axis orientated thin films using Pulsed Laser Deposition (PLD) technique on various substrates, including Si, LaAlO3, Al2O3. The resistivity and thermoelectric power measurements show that these films have superior thermoelectric properties, similar to that found in the bulk samples. The detailed transport and thermoelectric properties of Ca3Co4O9 thin films will be discussed. This work was supported by the U. S. Dept. of Energy, Office of Basic Energy Science, under contract No. DE-AC-02-98CH10886.

  8. Low-Temperature Thermoelectric Properties of PtSb2- x Te x for Cryogenic Peltier Cooling Applications

    NASA Astrophysics Data System (ADS)

    Waldrop, Spencer; Morelli, Donald

    2015-06-01

    PtSb2 is a potential material for cryogenic Peltier cooling applications because of its semimetal character with a high Seebeck coefficient and low electrical resistivity. To investigate the effects of n-type doping we studied PtSb2- x Te x with x between 0 and 0.04. A clear doping effect was observed, and the power factor was maximized for samples with x = 0.005, 0.02, and 0.04. If thermal conductivity reduction techniques can be used, this material may be a promising candidate for cryogenic Peltier cooling applications.

  9. La 1-x Ca x MnO 3 semiconducting nanostructures: morphology and thermoelectric properties.

    PubMed

    Culebras, Mario; Torán, Raquel; Gómez, Clara M; Cantarero, Andrés

    2014-01-01

    Semiconducting metallic oxides, especially perosvkite materials, are great candidates for thermoelectric applications due to several advantages over traditionally metallic alloys such as low production costs and high chemical stability at high temperatures. Nanostructuration can be the key to develop highly efficient thermoelectric materials. In this work, La 1-x Ca x MnO 3 perosvkite nanostructures with Ca as a dopant have been synthesized by the hydrothermal method to be used in thermoelectric applications at room temperature. Several heat treatments have been made in all samples, leading to a change in their morphology and thermoelectric properties. The best thermoelectric efficiency has been obtained for a Ca content of x=0.5. The electrical conductivity and Seebeck coefficient are strongly related to the calcium content. PMID:25206315

  10. Bismuth telluride nanostructures: preparation, thermoelectric properties and topological insulating effect

    NASA Astrophysics Data System (ADS)

    Ashalley, Eric; Chen, Haiyuan; Tong, Xin; Li, Handong; Wang, Zhiming M.

    2015-05-01

    Bismuth telluride is known to wield unique properties for a wide range of device applications. However, as devices migrate to the nanometer scale, significant amount of studies are being conducted to keep up with the rapidly growing nanotechnological field. Bi2Te3 possesses distinctive properties at the nanometer level from its bulk material. Therefore, varying synthesis and characterization techniques are being employed for the realization of various Bi2Te3 nanostructures in the past years. A considerable number of these works have aimed at improving the thermoelectric (TE) figure-of-merit (ZT) of the Bi2Te3 nanostructures and drawing from their topological insulating properties. This paper reviews the various Bi2Te3 and Bi2Te3-based nanostructures realized via theoretical and experimental procedures. The study probes the preparation techniques, TE properties and the topological insulating effects of 0D, 1D, 2D and Bi2Te3 nanocomposites. With several applications as a topological insulator (TI), the topological insulating effect of the Bi2Te3 is reviewed in detail with the time reversal symmetry (TRS) and surface state spins which characterize TIs. Schematics and preparation methods for the various nanostructural dimensions are accordingly categorized.

  11. Thermoelectric properties of binary LnN (Ln=La and Lu): First principles study

    NASA Astrophysics Data System (ADS)

    Sreeparvathy P., C.; Gudelli, Vijay Kumar; Kanchana, V.; Vaitheeswaran, G.; Svane, A.; Christensen, N. E.

    2015-06-01

    First principles density functional calculations were carried out to study the electronic structure and thermoelectric properties of LnN (Ln = La and Lu) using the full potential linearized augmented plane wave (FP-LAPW) method. The thermoelectric properties were calculated by solving the Boltzmann transport equation within the constant relaxation time approximation. The obtained lattice parameters are in good agreement with the available experimental and other theoretical results. The calculated band gaps using the Tran-Blaha modified Becke-Johnson potential (TB-mBJ), of both compounds are in good agreement with the available experimental values. Thermoelectric properties like thermopower (S), electrical conductivity scaled by relaxation time (σ/τ) and power-factor (S2σ/τ) are calculated as functions of the carrier concentration and temperature for both compounds. The calculated thermoelectric properties are compared with the available experimental results of the similar material ScN.

  12. Thermoelectric properties of CuAlCh{sub 2} (Ch = S, Se and Te)

    SciTech Connect

    Gudelli, Vijay Kumar; Kanchana, V.; Vaitheeswaran, G.

    2015-06-24

    Electronic and thermoelectric properties of ternary chalcopyrite-type CuAlCh{sub 2} (S, Se and Te) were studied using the first principles density functional calculations implemented in the full potential linear augmented plane wave (FP-LAPW) method. The thermoelectric properties are calculated by solving the Boltzmann transport equation within the constant relaxation time approximation. The calculated band gap using the Tran-Blaha modified Becke-Johnson potential (TB-mBJ), of all the compounds are in good agreement with the available experiment and other theoretical reports. Thermoelectric properties like thermopower, electrical conductivity scaled by relaxation time are calculated as a function of carrier concentrations at different temperatures. The calculated thermoelectric properties are compared with the available experiment and other theoretical calculations of similar materials.

  13. Thermoelectric properties of binary LnN (Ln=La and Lu): First principles study

    SciTech Connect

    Sreeparvathy, P. C.; Gudelli, Vijay Kumar; Kanchana, V.; Vaitheeswaran, G.; Svane, A.; Christensen, N. E.

    2015-06-24

    First principles density functional calculations were carried out to study the electronic structure and thermoelectric properties of LnN (Ln = La and Lu) using the full potential linearized augmented plane wave (FP-LAPW) method. The thermoelectric properties were calculated by solving the Boltzmann transport equation within the constant relaxation time approximation. The obtained lattice parameters are in good agreement with the available experimental and other theoretical results. The calculated band gaps using the Tran-Blaha modified Becke-Johnson potential (TB-mBJ), of both compounds are in good agreement with the available experimental values. Thermoelectric properties like thermopower (S), electrical conductivity scaled by relaxation time (σ/τ) and power-factor (S{sup 2}σ/τ) are calculated as functions of the carrier concentration and temperature for both compounds. The calculated thermoelectric properties are compared with the available experimental results of the similar material ScN.

  14. A Model for Predicting Thermoelectric Properties of Bi2Te3

    NASA Technical Reports Server (NTRS)

    Lee, Seungwon; VonAllmen, Paul

    2009-01-01

    A parameterized orthogonal tight-binding mathematical model of the quantum electronic structure of the bismuth telluride molecule has been devised for use in conjunction with a semiclassical transport model in predicting the thermoelectric properties of doped bismuth telluride. This model is expected to be useful in designing and analyzing Bi2Te3 thermoelectric devices, including ones that contain such nano - structures as quantum wells and wires. In addition, the understanding gained in the use of this model can be expected to lead to the development of better models that could be useful for developing other thermoelectric materials and devices having enhanced thermoelectric properties. Bi2Te3 is one of the best bulk thermoelectric materials and is widely used in commercial thermoelectric devices. Most prior theoretical studies of the thermoelectric properties of Bi2Te3 have involved either continuum models or ab-initio models. Continuum models are computationally very efficient, but do not account for atomic-level effects. Ab-initio models are atomistic by definition, but do not scale well in that computation times increase excessively with increasing numbers of atoms. The present tight-binding model bridges the gap between the well-scalable but non-atomistic continuum models and the atomistic but poorly scalable ab-initio models: The present tight-binding model is atomistic, yet also computationally efficient because of the reduced (relative to an ab-initio model) number of basis orbitals and flexible parameterization of the Hamiltonian.

  15. Signature of the topological surface state in the thermoelectric properties of Bi2Te3

    NASA Astrophysics Data System (ADS)

    Rittweger, F.; Hinsche, N. F.; Zahn, P.; Mertig, I.

    2014-01-01

    We present ab initio electronic structure calculations based on density functional theory for the thermoelectric properties of Bi2Te3 films. Conductivity and thermopower are computed in the diffusive limit of transport based on the Boltzmann equation. Bulk and surface contributions to the transport coefficients are separated by a special projection technique. As a result we show clear signatures of the topological surface state in the thermoelectric properties.

  16. Sterility, mechanical properties, and molecular stability of polylactide internal-fixation devices treated with low-temperature plasmas.

    PubMed

    Gogolewski, S; Mainil-Varlet, P; Dillon, J G

    1996-10-01

    The effect of low-temperature plasma on sterility, molecular, mechanical, and crystalline properties of poly (L-lactide), poly (L/D-lactide) and poly (L/DL-lactide) was investigated. Polymers were treated for 15 and 30 min at 100 W with nitrogen, argon, oxygen, and carbon dioxide plasma. All polymers treated with oxygen or carbon dioxide plasma were rendered sterile after 15 min of treatment. Only 70% of the samples treated under similar conditions with nitrogen or argon plasma were sterile. Extension of the exposure time to 30 min and increasing power to 200 W did not improve sterilization efficiency. Plasma sterilization, under the conditions used, caused no significant decrease or increase in overall molecular weight or polydispersity of the polylactides used. In most instances the effect of plasma sterilization was to slightly increase the overall molecular weight of the polymers studied. Treatment with argon plasma led to a more consistent increase in molecular weight than did treatment with nitrogen, oxygen, or carbon dioxide. Analysis of the surface (skin) of a poly(L-lactide) injection-molded rod following plasma sterilization indicated an increase in molecular weight as related to the interior (core) of the rod. Comparison of Mark-Houwink plots for the surface and interior of poly(L-lactide) injection-molded rods following plasma sterilization indicated an increase in chain branching for the surface relative to the interior of the rod. Generally the highly crystalline poly(L-lactide) was less susceptible to change upon plasma treatment than was the less crystalline poly(L/D-lactide) and poly(L/DL-lactide). The mechanical properties (shear strength, bending strength, and moduli) of the polylactides were not affected by plasma treatment. The overall melting temperature and the heat of melting of polylactides studied were not affected by plasma treatment. The melting temperature of the skin of the samples was about 1 degree C higher than the melting

  17. Tailored semiconducting carbon nanotube networks with enhanced thermoelectric properties

    NASA Astrophysics Data System (ADS)

    Avery, Azure D.; Zhou, Ben H.; Lee, Jounghee; Lee, Eui-Sup; Miller, Elisa M.; Ihly, Rachelle; Wesenberg, Devin; Mistry, Kevin S.; Guillot, Sarah L.; Zink, Barry L.; Kim, Yong-Hyun; Blackburn, Jeffrey L.; Ferguson, Andrew J.

    2016-04-01

    Thermoelectric power generation, allowing recovery of part of the energy wasted as heat, is emerging as an important component of renewable energy and energy efficiency portfolios. Although inorganic semiconductors have traditionally been employed in thermoelectric applications, organic semiconductors garner increasing attention as versatile thermoelectric materials. Here we present a combined theoretical and experimental study suggesting that semiconducting single-walled carbon nanotubes with carefully controlled chirality distribution and carrier density are capable of large thermoelectric power factors, higher than 340 μW m-1 K-2, comparable to the best-performing conducting polymers and larger than previously observed for carbon nanotube films. Furthermore, we demonstrate that phonons are the dominant source of thermal conductivity in the networks, and that our carrier doping process significantly reduces the thermal conductivity relative to undoped networks. These findings provide the scientific underpinning for improved functional organic thermoelectric composites with carbon nanotube inclusions.

  18. Tailored semiconducting carbon nanotube networks with enhanced thermoelectric properties

    NASA Astrophysics Data System (ADS)

    Avery, Azure D.; Zhou, Ben H.; Lee, Jounghee; Lee, Eui-Sup; Miller, Elisa M.; Ihly, Rachelle; Wesenberg, Devin; Mistry, Kevin S.; Guillot, Sarah L.; Zink, Barry L.; Kim, Yong-Hyun; Blackburn, Jeffrey L.; Ferguson, Andrew J.

    2016-04-01

    Thermoelectric power generation, allowing recovery of part of the energy wasted as heat, is emerging as an important component of renewable energy and energy efficiency portfolios. Although inorganic semiconductors have traditionally been employed in thermoelectric applications, organic semiconductors garner increasing attention as versatile thermoelectric materials. Here we present a combined theoretical and experimental study suggesting that semiconducting single-walled carbon nanotubes with carefully controlled chirality distribution and carrier density are capable of large thermoelectric power factors, higher than 340 μW m‑1 K‑2, comparable to the best-performing conducting polymers and larger than previously observed for carbon nanotube films. Furthermore, we demonstrate that phonons are the dominant source of thermal conductivity in the networks, and that our carrier doping process significantly reduces the thermal conductivity relative to undoped networks. These findings provide the scientific underpinning for improved functional organic thermoelectric composites with carbon nanotube inclusions.

  19. Tailored semiconducting carbon nanotube networks with enhanced thermoelectric properties

    DOE PAGES

    Avery, Azure D.; Zhou, Ben H.; Lee, Jounghee; Lee, Eui -Sup; Miller, Elisa M.; Ihly, Rachelle; Wesenberg, Devin; Mistry, Kevin S.; Guillot, Sarah L.; Zink, Barry L.; et al

    2016-04-04

    Thermoelectric power generation, allowing recovery of part of the energy wasted as heat, is emerging as an important component of renewable energy and energy efficiency portfolios. Although inorganic semiconductors have traditionally been employed in thermoelectric applications, organic semiconductors garner increasing attention as versatile thermoelectric materials. Here we present a combined theoretical and experimental study suggesting that semiconducting single-walled carbon nanotubes with carefully controlled chirality distribution and carrier density are capable of large thermoelectric power factors, higher than 340 μW m-1 K-2, comparable to the best-performing conducting polymers and larger than previously observed for carbon nanotube films. Furthermore, we demonstrate thatmore » phonons are the dominant source of thermal conductivity in the networks, and that our carrier doping process significantly reduces the thermal conductivity relative to undoped networks. As a result, these findings provide the scientific underpinning for improved functional organic thermoelectric composites with carbon nanotube inclusions.« less

  20. Thermal and Thermoelectric Properties of Nanostructured Materials and Interfaces

    NASA Astrophysics Data System (ADS)

    Liao, Hao-Hsiang

    Many modern technologies are enabled by the use of thin films and/or nanostructured composite materials. For example, many thermoelectric devices, solar cells, power electronics, thermal barrier coatings, and hard disk drives contain nanostructured materials where the thermal conductivity of the material is a critical parameter for the device performance. At the nanoscale, the mean free path and wavelength of heat carriers may become comparable to or smaller than the size of a nanostructured material and/or device. For nanostructured materials made from semiconductors and insulators, the additional phonon scattering mechanisms associated with the high density of interfaces and boundaries introduces additional resistances that can significantly change the thermal conductivity of the material as compared to a macroscale counterpart. Thus, better understanding and control of nanoscale heat conduction in solids is important scientifically and for the engineering applications mentioned above. In this dissertation, I discuss my work in two areas dealing with nanoscale thermal transport: (1) I describe my development and advancement of important thermal characterization tools for measurements of thermal and thermoelectric properties of a variety of materials from thin films to nanostructured bulk systems, and (2) I discuss my measurements on several materials systems done with these characterization tools. First, I describe the development, assembly, and modification of a time-domain thermoreflectance (TDTR) system that we use to measure the thermal conductivity and the interface thermal conductance of a variety of samples including nanocrystalline alloys of Ni-Fe and Co-P, bulk metallic glasses, and other thin films. Next, a unique thermoelectric measurement system was designed and assembled for measurements of electrical resistivity and thermopower of thermoelectric materials in the temperature range of 20 to 350 °C. Finally, a commercial Anter Flashline 3000 thermal

  1. Study of the Spectral Properties of Nanocomposites with CdSe Quantum Dots in a Wide Range of Low Temperatures

    NASA Astrophysics Data System (ADS)

    Magaryan, K. A.; Eremchev, I. Y.; Karimullin, K. R.; Knyazev, M. V.; Mikhailov, M. A.; Vasilieva, I. A.; Klimusheva, G. V.

    2015-09-01

    Luminescence spectra of the colloidal solution of CdSe quantum dots (in toluene) were studied in a wide range of low temperatures. Samples were synthesized in the liquid crystal matrix of cadmium octanoate (CdC8). A comparative analysis of the obtained data with previous results was performed.

  2. Microstructures and Thermoelectric Properties of Sintered Misfit-Layered Cobalt Oxide

    NASA Astrophysics Data System (ADS)

    Morimura, Takao; Yamaguchi, Takahiro; Kojima, Takuya; Matsuya, Noriki; Kondo, Shin-ichiro; Nakashima, Hiromichi

    2014-06-01

    Misfit-layered cobalt oxide Ca3Co4O9 is considered to be a prospective material for thermoelectric conversion. The thermoelectric properties are anisotropic owing to its anisotropic crystal structure. The crystal has preferred thermoelectric properties along the a- b plane. Therefore, the thermoelectric properties are improved and controlled by the degree of orientation of the sintered sample. In the present work, Sr-doped misfit cobalt oxide Ca2.7Sr0.3Co4O9 was prepared by solid-phase reaction, followed by uniaxial compression molding and sintering at 1173 K. The Seebeck coefficient α, electrical resistivity ρ, and dimensionless figure of merit ZT were measured as a function of the compression pressure applied in the uniaxial molding. α, ρ, and ZT as functions of the degree of orientation and the relative density are experimentally clarified and explained by calculations using the compound model.

  3. Photo-controllable thermoelectric properties with reversibility and photo-thermoelectric effects of tungsten trioxide accompanied by its photochromic phenomenon

    NASA Astrophysics Data System (ADS)

    Azuma, Chiori; Kawano, Takuto; Kakemoto, Hirofumi; Irie, Hiroshi

    2014-11-01

    The addition of photo-controllable properties to tungsten trioxide (WO3) is of interest for developing practical applications of WO3 as well as for interpreting such phenomena from scientific viewpoints. Here, a sputtered crystalline WO3 thin film generated thermoelectric power due to ultraviolet (UV) light-induced band-gap excitation and was accompanied by a photochromic reaction resulting from generating W5+ ions. The thermoelectric properties (electrical conductivity (σ) and Seebeck coefficient (S)) and coloration of WO3 could be reversibly switched by alternating the external stimulus between UV light irradiation and dark storage. After irradiating the film with UV light, σ increased, whereas the absolute value of S decreased, and the photochromic (coloration) reaction was detected. Notably, the opposite behavior was exhibited by WO3 after dark storage, and this reversible cycle could be repeated at least three times. Moreover, photo-thermoelectric effects (photo-conductive effect (photo-conductivity, σphoto) and photo-Seebeck effect (photo-Seebeck coefficient, Sphoto)) were also detected in response to visible-light irradiation of the colored WO3 thin films. Under visible-light irradiation, σphoto and the absolute value of Sphoto increased and decreased, respectively. These effects are likely attributable to the excitation of electrons from the mid-gap visible light absorption band (W5+ state) to the conduction band of WO3. Our findings demonstrate that the simultaneous, reversible switching of multiple properties of WO3 thin film is achieved by the application of an external stimulus and that this material exhibits photo-thermoelectric effects when irradiated with visible-light.

  4. Photo-controllable thermoelectric properties with reversibility and photo-thermoelectric effects of tungsten trioxide accompanied by its photochromic phenomenon

    SciTech Connect

    Azuma, Chiori; Kawano, Takuto; Kakemoto, Hirofumi; Irie, Hiroshi

    2014-11-07

    The addition of photo-controllable properties to tungsten trioxide (WO{sub 3}) is of interest for developing practical applications of WO{sub 3} as well as for interpreting such phenomena from scientific viewpoints. Here, a sputtered crystalline WO{sub 3} thin film generated thermoelectric power due to ultraviolet (UV) light-induced band-gap excitation and was accompanied by a photochromic reaction resulting from generating W{sup 5+} ions. The thermoelectric properties (electrical conductivity (σ) and Seebeck coefficient (S)) and coloration of WO{sub 3} could be reversibly switched by alternating the external stimulus between UV light irradiation and dark storage. After irradiating the film with UV light, σ increased, whereas the absolute value of S decreased, and the photochromic (coloration) reaction was detected. Notably, the opposite behavior was exhibited by WO{sub 3} after dark storage, and this reversible cycle could be repeated at least three times. Moreover, photo-thermoelectric effects (photo-conductive effect (photo-conductivity, σ{sub photo}) and photo-Seebeck effect (photo-Seebeck coefficient, S{sub photo})) were also detected in response to visible-light irradiation of the colored WO{sub 3} thin films. Under visible-light irradiation, σ{sub photo} and the absolute value of S{sub photo} increased and decreased, respectively. These effects are likely attributable to the excitation of electrons from the mid-gap visible light absorption band (W{sup 5+} state) to the conduction band of WO{sub 3}. Our findings demonstrate that the simultaneous, reversible switching of multiple properties of WO{sub 3} thin film is achieved by the application of an external stimulus and that this material exhibits photo-thermoelectric effects when irradiated with visible-light.

  5. Harvesting Nanocatalytic Heat Localized in Nanoalloy Catalyst as a Heat Source in a Nanocomposite Thin Film Thermoelectric Device.

    PubMed

    Zhao, Wei; Shan, Shiyao; Luo, Jin; Mott, Derrick M; Maenosono, Shinya; Zhong, Chuan-Jian

    2015-10-20

    This report describes findings of an investigation of harvesting nanocatalytic heat localized in a nanoalloy catalyst layer as a heat source in a nanocomposite thin film thermoelectric device for thermoelectric energy conversion. This device couples a heterostructured copper-zinc sulfide nanocomposite for thermoelectrics and low-temperature combustion of methanol fuels over a platinum-cobalt nanoalloy catalyst for producing heat localized in the nanocatalyst layer. The possibility of tuning nanocatalytic heat in the nanocatalyst and thin film thermoelectric properties by compositions points to a promising pathway in thermoelectric energy conversion.

  6. Harvesting Nanocatalytic Heat Localized in Nanoalloy Catalyst as a Heat Source in a Nanocomposite Thin Film Thermoelectric Device.

    PubMed

    Zhao, Wei; Shan, Shiyao; Luo, Jin; Mott, Derrick M; Maenosono, Shinya; Zhong, Chuan-Jian

    2015-10-20

    This report describes findings of an investigation of harvesting nanocatalytic heat localized in a nanoalloy catalyst layer as a heat source in a nanocomposite thin film thermoelectric device for thermoelectric energy conversion. This device couples a heterostructured copper-zinc sulfide nanocomposite for thermoelectrics and low-temperature combustion of methanol fuels over a platinum-cobalt nanoalloy catalyst for producing heat localized in the nanocatalyst layer. The possibility of tuning nanocatalytic heat in the nanocatalyst and thin film thermoelectric properties by compositions points to a promising pathway in thermoelectric energy conversion. PMID:26444621

  7. Thermoelectric properties of two-dimensional topological insulators doped with nonmagnetic impurities

    NASA Astrophysics Data System (ADS)

    Li, L. L.; Xu, W.

    2014-07-01

    We present a theoretical study on the thermoelectric properties of two-dimensional topological insulators (2DTIs) doped with nonmagnetic impurities. We develop a tractable model to calculate the electronic band structure without additional input parameters and to evaluate the thermoelectric properties of 2DTIs based on CdTe/HgTe quantum wells. We find that with increasing the doping concentration of nonmagnetic impurity, the edge states dominate the thermoelectric transport and the bulk-state conduction is largely suppressed. For typical sample parameters, the thermoelectric figure of merit ZT (a quantity used to characterize the conversion efficiency of a thermoelectric device between the heat and electricity) can be much larger than 1, which is a great advance over conventional thermoelectric materials. Furthermore, we show that with decreasing the 2DTI ribbon width or the Hall-bar width, ZT can be considerably further improved. These results indicate that the CdTe/HgTe 2DTIs doped with nonmagnetic impurities can be potentially applied as high-efficiency thermoelectric materials and devices.

  8. Thermoelectric properties of two-dimensional topological insulators doped with nonmagnetic impurities

    SciTech Connect

    Li, L. L.; Xu, W.

    2014-07-07

    We present a theoretical study on the thermoelectric properties of two-dimensional topological insulators (2DTIs) doped with nonmagnetic impurities. We develop a tractable model to calculate the electronic band structure without additional input parameters and to evaluate the thermoelectric properties of 2DTIs based on CdTe/HgTe quantum wells. We find that with increasing the doping concentration of nonmagnetic impurity, the edge states dominate the thermoelectric transport and the bulk-state conduction is largely suppressed. For typical sample parameters, the thermoelectric figure of merit ZT (a quantity used to characterize the conversion efficiency of a thermoelectric device between the heat and electricity) can be much larger than 1, which is a great advance over conventional thermoelectric materials. Furthermore, we show that with decreasing the 2DTI ribbon width or the Hall-bar width, ZT can be considerably further improved. These results indicate that the CdTe/HgTe 2DTIs doped with nonmagnetic impurities can be potentially applied as high-efficiency thermoelectric materials and devices.

  9. Thermoelectric properties of SbNCa3 and BiNCa3 for thermoelectric devices and alternative energy applications

    NASA Astrophysics Data System (ADS)

    Bilal, M.; Khan, Banaras; Rahnamaye Aliabad, H. A.; Maqbool, M.; Jalai Asadabadi, S.; Ahmad, I.

    2014-05-01

    Thermoelectric properties of two antiperovskites SbNCa3 and BiNCa3 are calculated using first principles calculations. High values of Seebeck coefficients are observed for these materials. Electrical and thermal conductivities are also calculated. Increase in thermal conductivity and decrease in electrical conductivity are found with increasing temperature. The maximum values of thermal conductivity are 92×1014 W/m K s and 88×1014 W/m K s for SbNCa3 and BiNCa3 respectively at a temperature of 900 K. The peak values of 5×1020/Ω m s and 5.2×1020/Ω m s are achieved for n-type SbNCa3 and BiNCa3 respectively at a temperature of 300 K. Figure of merit is achieved for these materials at room temperature which shows that these materials can be useful for thermoelectric devices and alternative energy sources.

  10. Processing and nanostructure influences on mechanical properties of thermoelectric materials

    NASA Astrophysics Data System (ADS)

    Schmidt, Robert David

    Thermoelectric (TE) materials are materials that can generate an electric current from a thermal gradient, with possible service in recovery of waste heat such as engine exhaust. Significant progress has been made in improving TE conversion efficiency, typically reported according to the figure of merit, ZT, with several recent papers publishing ZT values above 2. Furthermore, cost reductions may be made by the use of lower cost elements such as Mg, Si, Sn, Pb, Se and S in TE materials, while achieving ZT values between 1.3 and 1.8. To be used in a device, the thermoelectric material must be able to withstand the applied thermal and mechanical forces without failure. However, these materials are brittle, with low fracture toughness typically less than 1.5 MPa-m1/2, and often less than 0.5 MPa-m1/2. For comparison, window glass is approximately 0.75 MPa-m1/2. They have been optimized with nanoprecipitates, nanoparticles, doping, alterations in stoichiometry, powder processing and other techniques, all of which may alter the mechanical properties. In this study, the effect of SiC nanoparticle additions in Mg2Si, SnTe and Ag nanoparticle additions in the skutterudite Ba0.3Co 4Sb12 on the elastic moduli, hardness and fracture toughness are measured. Large changes (˜20%) in the elastic moduli in SnTe 1+x as a function of x at 0 and 0.016 are shown. The effect on mechanical properties of doping and precipitates of CdS or ZnS in a PbS or PbSe matrix have been reported. Changes in sintering behavior of the skutterudite with the Ag nanoparticle additions were explored. Possible liquid phase sintering, with associated benefits in lower processing temperature, faster densification and lower cost, has been shown. A technique has been proposed for determining additional liquid phase sintering aids in other TE materials. The effects of porosity, grain size, powder processing method, and sintering method were explored with YbAl3 and Ba0.3Co4Sb 12, with the porosity dependence of

  11. Investigation to the deep center related properties of low temperature grown InPBi with Hall and photoluminescence

    SciTech Connect

    Wang, Peng; Pan, Wenwu; Wu, Xiaoyan; Wang, Kai; Yue, Li; Gong, Qian; Wang, Shumin

    2015-12-15

    InP{sub 1-x}Bi{sub x} epilayers with bismuth (Bi) concentration x= 1.0% were grown on InP by gas source molecular beam epitaxy (GS-MBE) at low temperature (LT). Bi incorporation decreased the intrinsic free electron concentration of low temperature grown InP indicated by hall analysis. It is concluded that deep level center was introduced by Bi. Influence of Si doping on the InP{sub 1-x}Bi{sub x} films Photoluminescence (PL) was investigated. N-type doping in the InP{sub 1-x}Bi{sub x} epilayers was found to be effective at PL enhancement. Blue shift of InPBi PL emission wavelength was observed as the Si doping concentration increasing. Two independent peaks were fitted and their temperature dependence behavior was observed to be distinct obviously. Two individual radiative recombination processes were expected to be involved.

  12. Nonlinear thermoelectric response due to energy-dependent transport properties of a quantum dot

    NASA Astrophysics Data System (ADS)

    Svilans, Artis; Burke, Adam M.; Svensson, Sofia Fahlvik; Leijnse, Martin; Linke, Heiner

    2016-08-01

    Quantum dots are useful model systems for studying quantum thermoelectric behavior because of their highly energy-dependent electron transport properties, which are tunable by electrostatic gating. As a result of this strong energy dependence, the thermoelectric response of quantum dots is expected to be nonlinear with respect to an applied thermal bias. However, until now this effect has been challenging to observe because, first, it is experimentally difficult to apply a sufficiently large thermal bias at the nanoscale and, second, it is difficult to distinguish thermal bias effects from purely temperature-dependent effects due to overall heating of a device. Here we take advantage of a novel thermal biasing technique and demonstrate a nonlinear thermoelectric response in a quantum dot which is defined in a heterostructured semiconductor nanowire. We also show that a theoretical model based on the Master equations fully explains the observed nonlinear thermoelectric response given the energy-dependent transport properties of the quantum dot.

  13. Enhanced Thermoelectric Properties of Cu2ZnSnSe4 with Ga-doping

    DOE PAGES

    Wei, Kaya; Beauchemin, Laura; Wang, Hsin; Porter, Wallace D.; Martin, Joshua; Nolas, George S.

    2015-08-10

    Gallium doped Cu2ZnSnSe4 quaternary chalcogenides with and without excess Cu were synthesized by elemental reaction and densified using hot pressing in order to investigate their high temperature thermoelectric properties. The resistivity, , and Seebeck coefficient, S, for these materials decrease with increased Ga-doping while both mobility and effective mass increase with Ga doping. The power factor (S2/ρ) therefore increases with Ga-doping. The highest thermoelectric figure of merit (ZT = 0.39 at 700 K) was obtained for the composition that had the lowest thermal conductivity. Our results suggest an approach to achieving optimized thermoelectric properties and are part of the continuingmore » effort to explore different quaternary chalcogenide compositions and structure types, as this class of materials continues to be of interest for thermoelectrics applications.« less

  14. Anisotropic thermoelectric properties of layered compounds in SnX2 (X = S, Se): a promising thermoelectric material.

    PubMed

    Sun, Bao-Zhen; Ma, Zuju; He, Chao; Wu, Kechen

    2015-11-28

    Thermoelectrics interconvert heat to electricity and are of great interest in waste heat recovery, solid-state cooling and so on. Here we assessed the potential of SnS2 and SnSe2 as thermoelectric materials at the temperature gradient from 300 to 800 K. Reflecting the crystal structure, the transport coefficients are highly anisotropic between a and c directions, in particular for the electrical conductivity. The preferred direction for both materials is the a direction in TE application. Most strikingly, when 800 K is reached, SnS2 can show a peak power factor (PF) of 15.50 μW cm(-1) K(-2) along the a direction, while a relatively low value (11.72 μW cm(-1) K(-2)) is obtained in the same direction of SnSe2. These values are comparable to those observed in thermoelectrics such as SnSe and SnS. At 300 K, the minimum lattice thermal conductivity (κmin) along the a direction is estimated to be about 0.67 and 0.55 W m(-1) K(-1) for SnS2 and SnSe2, respectively, even lower than the measured lattice thermal conductivity of Bi2Te3 (1.28 W m(-1) K(-1) at 300 K). The reasonable PF and κmin suggest that both SnS2 and SnSe2 are potential thermoelectric materials. Indeed, the estimated peak ZT can approach 0.88 for SnSe2 and a higher value of 0.96 for SnS2 along the a direction at a carrier concentration of 1.94 × 10(19) (SnSe2) vs. 2.87 × 10(19) cm(-3) (SnS2). The best ZT values in SnX2 (X = S, Se) are comparable to that in Bi2Te3 (0.8), a typical thermoelectric material. We hope that this theoretical investigation will provide useful information for further experimental and theoretical studies on optimizing the thermoelectric properties of SnX2 materials.

  15. Thermoelectric transport properties of pristine and Na-doped SnSe(1-x)Te(x) polycrystals.

    PubMed

    Wei, Tian-Ran; Wu, Chao-Feng; Zhang, Xiaozhi; Tan, Qing; Sun, Li; Pan, Yu; Li, Jing-Feng

    2015-11-28

    SnSe, a "simple" and "old" binary compound composed of earth-abundant elements, has been reported to exhibit a high thermoelectric performance in single crystals, which stimulated recent interest in its polycrystalline counterparts. This work investigated the electrical and thermal transport properties of pristine and Na-doped SnSe1-xTex polycrystals prepared by mechanical alloying and spark plasma sintering. It is revealed that SnSe1-xTex solid solutions are formed when x ranges from 0 to 0.2. An energy barrier scattering mechanism is suitable for understanding the electrical conducting behaviour observed in the present SnSe polycrystalline materials, which may be associated with abundant defects at grain boundaries. The thermal conductivity was greatly reduced upon Te substitution due to alloy scattering of phonons as well explained by the Debye model. Due to the increased carrier concentration by Na-doping, thermoelectric figure of merit (ZT) was enhanced in the whole temperature range with a maximum value of 0.72 obtained at a relatively low temperature (773 K) for Sn0.99Na0.01Se0.84Te0.16. PMID:26496971

  16. Thermoelectric properties of armchair and zigzag silicene nanoribbons.

    PubMed

    Pan, L; Liu, H J; Tan, X J; Lv, H Y; Shi, J; Tang, X F; Zheng, G

    2012-10-21

    Using the nonequilibrium Green's function method and nonequilibrium molecular dynamics simulations, we discuss the possibility of using silicene nanoribbons (SiNRs) as high performance thermoelectric materials. It is found that SiNRs are structurally stable if the edge atoms are passivated by hydrogen, and those with armchair edges usually exhibit much better thermoelectric performance than their zigzag counterparts. The room temperature ZT value of armchair SiNRs shows a width-dependent oscillating decay, while it decreases slowly with increasing ribbon width for the zigzag SiNRs. In addition, there is a strong temperature dependence of the thermoelectric performance of these SiNRs. Our theoretical calculations indicate that by optimizing the doping level and applied temperature, the ZT value of SiNRs could be enhanced to as high as 4.9 which suggests their very appealing thermoelectric applications.

  17. Zigzag nanoribbons of two-dimensional silicene-like crystals: magnetic, topological and thermoelectric properties.

    PubMed

    Wierzbicki, Michał; Barnaś, Józef; Swirkowicz, Renata

    2015-12-01

    The effects of electron-electron and spin-orbit interactions on the ground-state magnetic configuration and on the corresponding thermoelectric and spin thermoelectric properties in zigzag nanoribbons of two-dimensional hexagonal crystals are analysed theoretically. The thermoelectric properties of quasi-stable magnetic states are also considered. Of particular interest is the influence of Coulomb and spin-orbit interactions on the topological edge states and on the transition between the topological insulator and conventional gap insulator states. It is shown that the interplay of both interactions also has a significant impact on the transport and thermoelectric characteristics of the nanoribbons. The spin-orbit interaction also determines the in-plane magnetic easy axis. The thermoelectric properties of nanoribbons with in-plane magnetic moments are compared to those of nanoribbons with edge magnetic moments oriented perpendicularly to their plane. Nanoribbons with ferromagnetic alignment of the edge moments are shown to reveal spin thermoelectricity in addition to the conventional one. PMID:26565114

  18. Zigzag nanoribbons of two-dimensional silicene-like crystals: magnetic, topological and thermoelectric properties.

    PubMed

    Wierzbicki, Michał; Barnaś, Józef; Swirkowicz, Renata

    2015-12-01

    The effects of electron-electron and spin-orbit interactions on the ground-state magnetic configuration and on the corresponding thermoelectric and spin thermoelectric properties in zigzag nanoribbons of two-dimensional hexagonal crystals are analysed theoretically. The thermoelectric properties of quasi-stable magnetic states are also considered. Of particular interest is the influence of Coulomb and spin-orbit interactions on the topological edge states and on the transition between the topological insulator and conventional gap insulator states. It is shown that the interplay of both interactions also has a significant impact on the transport and thermoelectric characteristics of the nanoribbons. The spin-orbit interaction also determines the in-plane magnetic easy axis. The thermoelectric properties of nanoribbons with in-plane magnetic moments are compared to those of nanoribbons with edge magnetic moments oriented perpendicularly to their plane. Nanoribbons with ferromagnetic alignment of the edge moments are shown to reveal spin thermoelectricity in addition to the conventional one.

  19. Zigzag nanoribbons of two-dimensional silicene-like crystals: magnetic, topological and thermoelectric properties

    NASA Astrophysics Data System (ADS)

    Wierzbicki, Michał; Barnaś, Józef; Swirkowicz, Renata

    2015-12-01

    The effects of electron-electron and spin-orbit interactions on the ground-state magnetic configuration and on the corresponding thermoelectric and spin thermoelectric properties in zigzag nanoribbons of two-dimensional hexagonal crystals are analysed theoretically. The thermoelectric properties of quasi-stable magnetic states are also considered. Of particular interest is the influence of Coulomb and spin-orbit interactions on the topological edge states and on the transition between the topological insulator and conventional gap insulator states. It is shown that the interplay of both interactions also has a significant impact on the transport and thermoelectric characteristics of the nanoribbons. The spin-orbit interaction also determines the in-plane magnetic easy axis. The thermoelectric properties of nanoribbons with in-plane magnetic moments are compared to those of nanoribbons with edge magnetic moments oriented perpendicularly to their plane. Nanoribbons with ferromagnetic alignment of the edge moments are shown to reveal spin thermoelectricity in addition to the conventional one.

  20. Novel Low Temperature Processing for Enhanced Properties of Ion Implanted Thin Films and Amorphous Mixed Oxide Thin Film Transistors

    NASA Astrophysics Data System (ADS)

    Vemuri, Rajitha

    This research emphasizes the use of low energy and low temperature post processing to improve the performance and lifetime of thin films and thin film transistors, by applying the fundamentals of interaction of materials with conductive heating and electromagnetic radiation. Single frequency microwave anneal is used to rapidly recrystallize the damage induced during ion implantation in Si substrates. Volumetric heating of the sample in the presence of the microwave field facilitates quick absorption of radiation to promote recrystallization at the amorphous-crystalline interface, apart from electrical activation of the dopants due to relocation to the substitutional sites. Structural and electrical characterization confirm recrystallization of heavily implanted Si within 40 seconds anneal time with minimum dopant diffusion compared to rapid thermal annealed samples. The use of microwave anneal to improve performance of multilayer thin film devices, e.g. thin film transistors (TFTs) requires extensive study of interaction of individual layers with electromagnetic radiation. This issue has been addressed by developing detail understanding of thin films and interfaces in TFTs by studying reliability and failure mechanisms upon extensive stress test. Electrical and ambient stresses such as illumination, thermal, and mechanical stresses are inflicted on the mixed oxide based thin film transistors, which are explored due to high mobilities of the mixed oxide (indium zinc oxide, indium gallium zinc oxide) channel layer material. Semiconductor parameter analyzer is employed to extract transfer characteristics, useful to derive mobility, subthreshold, and threshold voltage parameters of the transistors. Low temperature post processing anneals compatible with polymer substrates are performed in several ambients (oxygen, forming gas and vacuum) at 150 °C as a preliminary step. The analysis of the results pre and post low temperature anneals using device physics fundamentals

  1. Low-temperature transport properties of multigraphene films grown on the SiC surface by sublimation

    SciTech Connect

    Lebedev, A. A. Agrinskaya, N. V.; Lebedev, S. P.; Mynbaeva, M. G.; Petrov, V. N.; Smirnov, A. N.; Strel'chuk, A. M.; Titkov, A. N.; Shamshur, D. V.

    2011-05-15

    Multigraphene films grown by sublimation on the surface of a semi-insulating 6H-SiC substrate have been studied. It is shown that pregrowth annealing of the substrate in a quasiclosed growth cell improves the structural quality of a multigraphene film. Ohmic contacts to the film have been fabricated, and the Hall effect has been studied at low temperatures. It is found that a 2D electron gas exists in the films. It is concluded that the conductivity of the film is determined by defects existing within the graphene layer or at the interface between the graphene film and a SiC substrate.

  2. Electrical and thermoelectric properties of different compositions of Ge-Se-In thin films

    NASA Astrophysics Data System (ADS)

    Aly, K. A.; Dahshan, A.; Abbady, Gh.; Saddeek, Y.

    2016-09-01

    The effect of temperature in the range of 300-450 K and the indium content on the electrical and thermoelectric properties of Ge20Se80-xInx (0.0≤x≤24 at%) chalcogenide glassy thin films have been studied. From dc electrical and thermoelectric measurements, it was observed that the activation energies for electrical conductivity (ΔE) and for thermoelectric (ΔEs) decrease while the conductivity (σ) and Seebeck coefficient (S) increase upon introducing In into the Ge-Se glasses. In contrast to the behavior obtained with Bi or Pb doping, In incorporated in Ge-Se does not lead to a p-to n-type conduction inversion. The power factor (P) which is strongly depends on both of the Seebeck coefficient and the electrical conductivity. According to the obtained results, the Ge20Se80-xInx films can be considered potential candidates for incurring high action thermoelectric materials.

  3. Thermoelectric properties of Zintl compound Ca1-xNaxMg2Bi1.98

    NASA Astrophysics Data System (ADS)

    Shuai, Jing; Kim, Hee Seok; Liu, Zihang; He, Ran; Sui, Jiehe; Ren, Zhifeng

    2016-05-01

    Motivated by good thermoelectric performance of Bi-based Zintl compounds Ca1-xYbxMg2Biy, we further studied the thermoelectric properties of Zintl compound CaMg2Bi1.98 by doping Na into Ca as Ca1-xNaxMg2Bi1.98 via mechanical alloying and hot pressing. We found that the electrical conductivity, Seebeck coefficient, power factor, and carrier concentration can be effectively adjusted by tuning the Na concentration. Transport measurement and calculations revealed that an optimal doping of 0.5 at. % Na achieved better average ZT and efficiency. The enhancement in thermoelectric performance is attributed to the increased carrier concentration and power factor. The low cost and nontoxicity of Ca1-xNaxMg2Bi1.98 makes it a potentially promising thermoelectric material for power generation in the mid-temperature range.

  4. Thermoelectric Properties of CuAgSe doped with Co, Cr

    NASA Astrophysics Data System (ADS)

    Czajka, Peter; Yao, Mengliang; Opeil, Cyril

    Thermoelectric materials represent one way that reliable cooling below the boiling point of nitrogen can be realized. Current materials do not exhibit sufficiently high efficiencies at cryogenic temperatures, but significant progress is being made. One material that has generated significant interest recently is CuAgSe. It has been demonstrated (Ishiwata et al., Nature Mater. 2013) that doping CuAgSe with 10% Ni at the Cu sites increases the material's thermoelectric figure of merit (ZT) at 100 K from 0.02 to 0.10. This is intriguing not just because of the dramatic effect that the Ni doping produces, but also because CuAgSe is a semimetal and semimetals are not usually able to exhibit the kind of asymmetric carrier activation necessary for strong thermoelectric performance. In order to further investigate the unusual nature of thermoelectricity in CuAgSe and its strong dependence on chemical composition, we have synthesized and measured the thermoelectric properties of a series of CuAgSe samples doped with Co and Cr. Temperature-dependent magnetic and thermoelectric transport properties of CuAgSe as a function of Co and Cr doping will be discussed. This work is supported by the Department of Defense, AFOSR, MURI Program Contract # FA9550-10-1-0533 and the Trustees of Boston College.

  5. Assessing the thermoelectric properties of single InSb nanowires: the role of thermal contact resistance

    NASA Astrophysics Data System (ADS)

    Yazji, S.; Swinkels, M. Y.; De Luca, M.; Hoffmann, E. A.; Ercolani, D.; Roddaro, S.; Abstreiter, G.; Sorba, L.; Bakkers, E. P. A. M.; Zardo, I.

    2016-06-01

    The peculiar shape and dimensions of nanowires (NWs) have opened the way to their exploitation in thermoelectric applications. In general, the parameters entering into the thermoelectric figure of merit are strongly interdependent, which makes it difficult to realize an optimal thermoelectric material. In NWs, instead, the power factor can be increased and the thermal conductivity reduced, thus boosting the thermoelectric efficiency compared to bulk materials. However, the assessment of all the thermoelectric properties of a NW is experimentally very challenging. Here, we focus on InSb NWs, which have proved to be promising thermoelectric materials. The figure of merit is accurately determined by using a novel method based on a combination of Raman spectroscopy and electrical measurements. Remarkably, this type of experiment provides a powerful approach allowing us to neglect the role played by thermal contact resistance. Furthermore, we compare the thermal conductivity determined by this novel method to the one determined on the same sample by the thermal bridge method. In this latter approach, the thermal contact resistance is a non-negligible parameter, especially in NWs with large diameters. We provide experimental evidence of the crucial role played by thermal contact resistance in the assessment of the thermal properties of nanostructures, using two different measurement methods of the thermal conductivity.

  6. Role of the spin magnitude of the magnetic ion in determining the frustration and low-temperature properties of kagome lattices.

    PubMed

    Pati, Swapan K; Rao, C N R

    2005-12-15

    In view of the variety of low-temperature magnetic properties reported recently for kagome lattices with transition-metal ions in different oxidation states, we have investigated the low-energy spectrum and low-temperature thermodynamic properties of antiferromagnetic kagome lattices with varying magnitudes of site spins, employing quantum many-body Heisenberg models. The ground state and the low-lying excitation spectrum are found to depend strongly on the nature of the spin magnitude of the magnetic ions. The system remains highly frustrated if spins are half-odd-integer in magnitude, while the frustration is very weak or almost absent for integer spins or mixed-spin systems. In fact, for a mixed-spin kagome system with a certain magnitude, the whole system behaves as a classical magnet with a ferrimagnetic ground state without any frustration. These theoretical findings are consistent with a few experimental observations recently reported in the literature and would be of value in designing new kagome systems with unusual and interesting low-temperature magnetic properties.

  7. Structural and optical properties of low temperature grown AlN films on sapphire using helicon sputtering system

    SciTech Connect

    Chen, Meei-Ru; Chen, Hou-Guang; Kao, Hui-Ling Wu, Ming-Guei; Tzou, An-Jye; Chen, Jyh Shin; Chou, Hsiung

    2015-05-15

    AlN thin films have been deposited directly on c-plane sapphire substrates at low temperatures by a helicon sputtering system. The structural quality of AlN epitaxial films was characterized by x-ray diffractometry and transmission electron microscopy. The films exhibit smooth surface with root-mean-square roughness as small as 0.7 nm evaluated by atomic force microscope. The optical transmittance spectra show a steep absorption edge at the wavelength of 200 nm and a high transmittance of over 80% in the visible range. The band-edge transition (6.30 eV) of AlN film was observed in the cathodoluminescence spectrum recorded at 11 K. The spectral response of metal–semiconductor–metal photodetectors constructed with AlN/sapphire reveals the peak responsivity at 200 nm and a UV/visible rejection ratio of about two orders of magnitude. The results of this low temperature deposition suggest the feasibility of the epitaxial growth of AlN on sapphire substrates and the incorporation of the AlN films in the surface acoustic wave devices and the optical devices at deep ultraviolet region.

  8. Perspective: Web-based machine learning models for real-time screening of thermoelectric materials properties

    NASA Astrophysics Data System (ADS)

    Gaultois, Michael W.; Oliynyk, Anton O.; Mar, Arthur; Sparks, Taylor D.; Mulholland, Gregory J.; Meredig, Bryce

    2016-05-01

    The experimental search for new thermoelectric materials remains largely confined to a limited set of successful chemical and structural families, such as chalcogenides, skutterudites, and Zintl phases. In principle, computational tools such as density functional theory (DFT) offer the possibility of rationally guiding experimental synthesis efforts toward very different chemistries. However, in practice, predicting thermoelectric properties from first principles remains a challenging endeavor [J. Carrete et al., Phys. Rev. X 4, 011019 (2014)], and experimental researchers generally do not directly use computation to drive their own synthesis efforts. To bridge this practical gap between experimental needs and computational tools, we report an open machine learning-based recommendation engine (thermoelectrics.citrination.com">http://thermoelectrics.citrination.com) for materials researchers that suggests promising new thermoelectric compositions based on pre-screening about 25 000 known materials and also evaluates the feasibility of user-designed compounds. We show this engine can identify interesting chemistries very different from known thermoelectrics. Specifically, we describe the experimental characterization of one example set of compounds derived from our engine, RE12Co5Bi (RE = Gd, Er), which exhibits surprising thermoelectric performance given its unprecedentedly high loading with metallic d and f block elements and warrants further investigation as a new thermoelectric material platform. We show that our engine predicts this family of materials to have low thermal and high electrical conductivities, but modest Seebeck coefficient, all of which are confirmed experimentally. We note that the engine also predicts materials that may simultaneously optimize all three properties entering into zT; we selected RE12Co5Bi for this study due to its interesting chemical composition and known facile synthesis.

  9. Probing Electronic and Thermoelectric Properties of Single Molecule Junctions

    NASA Astrophysics Data System (ADS)

    Widawsky, Jonathan R.

    In an effort to further understand electronic and thermoelectric phenomenon at the nanometer scale, we have studied the transport properties of single molecule junctions. To carry out these transport measurements, we use the scanning tunneling microscope-break junction (STM-BJ) technique, which involves the repeated formation and breakage of a metal point contact in an environment of the target molecule. Using this technique, we are able to create gaps that can trap the molecules, allowing us to sequentially and reproducibly create a large number of junctions. By applying a small bias across the junction, we can measure its conductance and learn about the transport mechanisms at the nanoscale. The experimental work presented here directly probes the transmission properties of single molecules through the systematic measurement of junction conductance (at low and high bias) and thermopower. We present measurements on a variety of molecular families and study how conductance depends on the character of the linkage (metal-molecule bond) and the nature of the molecular backbone. We start by describing a novel way to construct single molecule junctions by covalently connecting the molecular backbone to the electrodes. This eliminates the use of linking substituents, and as a result, the junction conductance increases substantially. Then, we compare transport across silicon chains (silanes) and saturated carbon chains (alkanes) while keeping the linkers the same and find a stark difference in their electronic transport properties. We extend our studies of molecular junctions by looking at two additional aspects of quantum transport -- molecular thermopower and molecular current-voltage characteristics. Each of these additional parameters gives us further insight into transport properties at the nanoscale. Evaluating the junction thermopower allows us to determine the nature of charge carriers in the system and we demonstrate this by contrasting the measurement of amine

  10. Thermoelectric properties of n-type PbSe revisited

    SciTech Connect

    Parker, David S; Singh, David J; Ren, Zhifeng; Zhang, Qinyong

    2012-01-01

    It was recently predicted \\cite{parker} and experimentally confirmed \\cite{sny_PbSe} that $p$-type PbSe would be a good thermoelectric material. Recent experimental work \\cite{pers2} now suggests that $n$-type PbSe can also be a good thermoelectric material. We now re-examine the thermoelectric performance of PbSe with a revised approximation which improves band gap accuracy. We now find that $n$-type PbSe {\\it can} be a high performance material, with thermopowers as high in magnitude as 250 $\\mu$V/K at 1000 K and 300 $\\mu$V/K at 800 K. Optimal 1000 K $n$-type doping ranges are between 2 $\\times 10^{19}$cm$^{-3}$ and 8 $\\times 10^{19}$cm$^{-3}$, while at 800 K the corresponding range is from 7 $\\times$10$^{18}$ to 4 $\\times $10$^{19}$ cm$^{-3}$.

  11. Ultrathin GaN nanowires: Electronic, thermal, and thermoelectric properties

    NASA Astrophysics Data System (ADS)

    Davoody, A. H.; Ramayya, E. B.; Maurer, L. N.; Knezevic, I.

    2014-03-01

    We present a comprehensive computational study of the electronic, thermal, and thermoelectric (TE) properties of gallium nitride nanowires (NWs) over a wide range of thicknesses (3-9 nm), doping densities (1018-1020 cm-3), and temperatures (300-1000 K). We calculate the low-field electron mobility based on ensemble Monte Carlo transport simulation coupled with a self-consistent solution of the Poisson and Schrödinger equations. We use the relaxation-time approximation and a Poisson-Schrödinger solver to calculate the electron Seebeck coefficient and thermal conductivity. Lattice thermal conductivity is calculated using a phonon ensemble Monte Carlo simulation, with a real-space rough surface described by a Gaussian autocorrelation function. Throughout the temperature range, the Seebeck coefficient increases while the lattice thermal conductivity decreases with decreasing wire cross section, both boding well for TE applications of thin GaN NWs. However, at room temperature these benefits are eventually overcome by the detrimental effect of surface roughness scattering on the electron mobility in very thin NWs. The highest room-temperature ZT of 0.2 is achieved for 4-nm-thick NWs, while further downscaling degrades it. In contrast, at 1000 K, the electron mobility varies weakly with the NW thickness owing to the dominance of polar optical phonon scattering and multiple subbands contributing to transport, so ZT increases with increasing confinement, and reaches 0.8 for optimally doped 3-nm-thick NWs. The ZT of GaN NWs increases with increasing temperature beyond 1000 K, which further emphasizes their suitability for high-temperature TE applications.

  12. Low-temperature spray-pyrolysis of FeS2 films and their electrical and optical properties

    NASA Astrophysics Data System (ADS)

    Orletskii, I. G.; Mar'yanchuk, P. D.; Maistruk, E. V.; Solovan, M. N.; Brus, V. V.

    2016-01-01

    Iron disulfide (FeS2) films with a wide range of electrical resistivities 100 Ω cm ⩽ ρ ⩽ 800 kΩ cm, a high adhesion to the substrate, and a resistance to aggressive media have been prepared by the spray pyrolysis of aqueous solutions of the salts FeCl3 · 6H2O and (NH2)2CS at low temperatures in the range 250°C ⩽ T S ⩽ 400°C. It has been found that the FeS2 films have a high transmittance T ≈ 60-70% and are characterized by a sharp transmission edge. It has been shown that the optical band gap for direct ( E g op = 2.19-2.78 eV) and indirect ( E g 'op = 1.26-1.36 eV) optical transitions depends on the conditions of film preparation.

  13. Low Temperature Physics

    NASA Astrophysics Data System (ADS)

    Ruhemann, M.; Ruhemann, B.

    2014-05-01

    Part I. Phase Equilibrium: 1. Early methods of gas liquefaction; 2. Industrial air liquefaction; 3. The production of low temperatures; 4. The measurement of low temperatures; 5. Rectification in theory and practice; 6. Solid liquid equilibrium; Part II. The Solid State: 1. The crystal lattice; 2. The thermal energy of crystals; 3. Nernst's third law; Part III. Orbit and Spin: 1. Internal degrees of freedom; 2. Paramagnetism; 3. Magnetic cooling; Part IV. The 'Free' Electron: 1. Conductivity at low temperatures; 2. Supra-conductivity; Note added in proof; Bibliography; Addenda.

  14. Conventional freezing plus high pressure-low temperature treatment: Physical properties, microbial quality and storage stability of beef meat.

    PubMed

    Fernández, Pedro P; Sanz, Pedro D; Molina-García, Antonio D; Otero, Laura; Guignon, Bérengère; Vaudagna, Sergio R

    2007-12-01

    Meat high-hydrostatic pressure treatment causes severe decolouration, preventing its commercialisation due to consumer rejection. Novel procedures involving product freezing plus low-temperature pressure processing are here investigated. Room temperature (20°C) pressurisation (650MPa/10min) and air blast freezing (-30°C) are compared to air blast freezing plus high pressure at subzero temperature (-35°C) in terms of drip loss, expressible moisture, shear force, colour, microbial quality and storage stability of fresh and salt-added beef samples (Longissimus dorsi muscle). The latter treatment induced solid water transitions among ice phases. Fresh beef high pressure treatment (650MPa/20°C/10min) increased significantly expressible moisture while it decreased in pressurised (650MPa/-35°C/10min) frozen beef. Salt addition reduced high pressure-induced water loss. Treatments studied did not change fresh or salt-added samples shear force. Frozen beef pressurised at low temperature showed L, a and b values after thawing close to fresh samples. However, these samples in frozen state, presented chromatic parameters similar to unfrozen beef pressurised at room temperature. Apparently, freezing protects meat against pressure colour deterioration, fresh colour being recovered after thawing. High pressure processing (20°C or -35°C) was very effective reducing aerobic total (2-log(10) cycles) and lactic acid bacteria counts (2.4-log(10) cycles), in fresh and salt-added samples. Frozen+pressurised beef stored at -18°C during 45 days recovered its original colour after thawing, similarly to just-treated samples while their counts remain below detection limits during storage.

  15. Low-Temperature Supercapacitors

    NASA Technical Reports Server (NTRS)

    Brandon, Erik J.; West, William C.; Smart, Marshall C.

    2008-01-01

    An effort to extend the low-temperature operational limit of supercapacitors is currently underway. At present, commercially available non-aqueous supercapacitors are rated for a minimum operating temperature of -40 C. A capability to operate at lower temperatures would be desirable for delivering power to systems that must operate in outer space or in the Polar Regions on Earth. Supercapacitors (also known as double-layer or electrochemical capacitors) offer a high power density (>1,000 W/kg) and moderate energy density (about 5 to 10 Wh/kg) technology for storing energy and delivering power. This combination of properties enables delivery of large currents for pulsed applications, or alternatively, smaller currents for low duty cycle applications. The mechanism of storage of electric charge in a supercapacitor -- at the electrical double-layer formed at a solid-electrode/liquid-electrolyte interface -- differs from that of a primary or secondary electrochemical cell (i.e., a battery) in such a manner as to impart a long cycle life (typically >10(exp 6) charge/discharge cycles).

  16. Thermoelectric properties of Nb3SbxTe7-x compounds

    NASA Technical Reports Server (NTRS)

    Snyder, J.; Wang, S.; Caillat, T.

    2002-01-01

    Niobium antimony telluride, Nb3Sbx,Te7-x, was synthesized and tested for thermoelectric properties in the Thermoelectrics group at the Jet Propulsion Laboratory. The forty atoms per unit cell of Nb3Sb2Te5 and its varied mixture of atoms yield acomplicated structure, suggesting that Nb3Sb2Te5 and related compounds may exhibit low thermal conductivity and hence a higher ZT value. Nb3SbxTe7-x, compounds were synthesized and subsequently analyzed for their Seebeck voltage, heat conduction, and electrical resistivity. Results indicate that Nb3Sb2Te5 is a heavily doped semiconductor whose thermoelectric properties are compromised by compensating n-type and p-type carriers. Attempts to dope in favor of either carrier by varying the Sb:Te ratio yielded samples containing secondary metallic phases that dominated the transport properties of the resulting compounds.

  17. First principle investigation of the electronic and thermoelectric properties of Mg2C

    NASA Astrophysics Data System (ADS)

    Kulwinder, Kaur; Ranjan, Kumar

    2016-02-01

    In this paper, electronic and thermoelectric properties of Mg2C are investigated by using first principle pseudo potential method based on density functional theory and Boltzmann transport equations. We calculate the lattice parameters, bulk modulus, band gap and thermoelectric properties (Seebeck coefficient, electrical conductivity, and thermal conductivity) of this material at different temperatures and compare them with available experimental and other theoretical data. The calculations show that Mg2C is indirect band semiconductor with a band gap of 0.75 eV. The negative value of Seebeck coefficient shows that the conduction is due to electrons. The electrical conductivity decreases with temperature and Power factor (PF) increases with temperature. The thermoelectric properties of Mg2C have been calculated in a temperature range of 100 K-1200 K. Kulwinder Kaur thanks Council of Scientific & Industrial Research (CSIR), India for providing fellowship.

  18. Evaluation of Temperature-Dependent Effective Material Properties and Performance of a Thermoelectric Module

    NASA Astrophysics Data System (ADS)

    Chien, Heng-Chieh; Chu, En-Ting; Hsieh, Huey-Lin; Huang, Jing-Yi; Wu, Sheng-Tsai; Dai, Ming-Ji; Liu, Chun-Kai; Yao, Da-Jeng

    2013-07-01

    We devised a novel method to evaluate the temperature-dependent effective properties of a thermoelectric module (TEM): Seebeck coefficient ( S m), internal electrical resistance ( R m), and thermal conductance ( K m). After calculation, the effective properties of the module are converted to the average material properties of a p- n thermoelectric pillar pair inside the module: Seebeck coefficient ( S TE), electrical resistivity ( ρ TE), and thermal conductivity ( k TE). For a commercial thermoelectric module (Altec 1091) chosen to verify the novel method, the measured S TE has a maximum value at bath temperature of 110°C; ρ TE shows a positive linear trend dependent on the bath temperature, and k TE increases slightly with increasing bath temperature. The results show the method to have satisfactory measurement performance in terms of practicability and reliability; the data for tests near 23°C agree with published values.

  19. Synthesis and thermoelectric properties of CoP(sub 3)

    NASA Technical Reports Server (NTRS)

    Shields, V. B.; Caillet, T.

    2002-01-01

    In an effort to expand the range of operation for highly efficient, segmented thermoelectric unicouples currently being developed at JPL, skutterudite phosphides are being investigated as potential high temperature segments to supplement antimonide segments that limit the use of these unicouples at a hot-side temperature of about 873-973 K.

  20. Improved Superconducting properties in the Mg(11)B2 low activation superconductor prepared by low-temperature sintering.

    PubMed

    Cheng, Fang; Liu, Yongchang; Ma, Zongqing; Shahriar Al Hossain, M; Somer, M

    2016-05-05

    Mg(11)B2 has a great application prospect in the superconducting coils for fusion reactor as the "low activation superconductors". The un-doped Mg(11)B2 and Cu-doped Mg(11)B2 bulks using (11)B as a boron precursor were fabricated by low-temperature sintering in present work. It was found that the prepared Mg(11)B2 low activation superconductors exhibit better Jc performance than all of other Mg(11)B2 samples reported in previous studies. As for Cu doped Mg(11)B2, minor Cu addition can obviously improve the Mg(11)B2 grain crystallization and reduce the amount of MgO impurity. Hence, improved grain connectivity and higher Jc at low fields is obtained in Cu doped Mg(11)B2 samples. For un-doped samples, refined grains and more MgO impurity with proper size brought about more flux pinning centers, resulting in better Jc performance at high fields.

  1. Improved Superconducting properties in the Mg11B2 low activation superconductor prepared by low-temperature sintering

    NASA Astrophysics Data System (ADS)

    Cheng, Fang; Liu, Yongchang; Ma, Zongqing; Shahriar Al Hossain, M.; Somer, M.

    2016-05-01

    Mg11B2 has a great application prospect in the superconducting coils for fusion reactor as the “low activation superconductors”. The un-doped Mg11B2 and Cu-doped Mg11B2 bulks using 11B as a boron precursor were fabricated by low-temperature sintering in present work. It was found that the prepared Mg11B2 low activation superconductors exhibit better Jc performance than all of other Mg11B2 samples reported in previous studies. As for Cu doped Mg11B2, minor Cu addition can obviously improve the Mg11B2 grain crystallization and reduce the amount of MgO impurity. Hence, improved grain connectivity and higher Jc at low fields is obtained in Cu doped Mg11B2 samples. For un-doped samples, refined grains and more MgO impurity with proper size brought about more flux pinning centers, resulting in better Jc performance at high fields.

  2. Electrical properties of solution-deposited ZnO thin-film transistors by low-temperature annealing.

    PubMed

    Lim, Chul; Oh, Ji Young; Koo, Jae Bon; Park, Chan Woo; Jung, Soon-Won; Na, Bock Soon; Chu, Hye Yong

    2014-11-01

    Flexible oxide thin-film transistors (Oxide-TFTs) have emerged as next generation transistors because of their applicability in electronic device. In particular, the major driving force behind solution-processed zinc oxide film research is its prospective use in printing for electronics. A low-temperature process to improve the performance of solution-processed n-channel ZnO thin-film transistors (TFTs) fabricated via spin-coating and inkjet-printing is introduced here. ZnO nanoparticles were synthesized using a facile sonochemical method that was slightly modified based on a previously reported method. The influence of the annealing atmosphere on both nanoparticle-based TFT devices fabricated via spin-coating and those created via inkjet printing was investigated. For the inkjet-printed TFTs, the characteristics were improved significantly at an annealing temperature of 150 degrees C. The field effect mobility, V(th), and the on/off current ratios were 3.03 cm2/Vs, -3.3 V, and 10(4), respectively. These results indicate that annealing at 150 degrees C 1 h is sufficient to obtain a mobility (μ(sat)) as high as 3.03 cm2/Vs. Also, the active layer of the solution-based ZnO nanoparticles allowed the production of high-performance TFTs for low-cost, large-area electronics and flexible devices. PMID:25958581

  3. Transmission line pulse properties for a bidirectional transient voltage suppression diode fabricated using low-temperature epitaxy

    NASA Astrophysics Data System (ADS)

    Bouangeune, Daoheung; Cho, Deok-Ho; Yun, Hyung-Joong; Shim, Kyu-Hwan; Choi, Chel-Jong

    2015-01-01

    Based on low temperature epitaxy technology, a bidirectional transient voltage suppression (TVS) diode with abrupt multi-junctions was developed. The bidirectional triggering voltage of ±16 V was controlled by the thickness and dopant concentration in the multi-junctions using a reduced-pressure chemical vapor deposition (RPCVD) process. The manufactured TVS diode showed a small leakage current density and dynamic resistance of less than 5.1 × 10-14 A/ µm2 and 1 O, respectively, which could be associated with the epitaxially grown abrupt multijunctions. The transmission line pulse (TLP) analysis results demonstrated that the bidirectional TVS diodes were capable of withstanding a peak pulse current of up to ±20 A or ±1.02 × 10-3 A/ µm2, which is equivalent to ±40 kV of the human body model (HBM) and ±12 kV of IEC61000-4-2 (IEC). Nevertheless, the electrostatic discharge (ESD) design window showed that bidirectional TVS diodes meet IEC level 4 standard ESD protection requirements (8 kV in contact discharge). In addition, because of the bidirectional structure, the TVS devices exhibited a small capacitance of 4.9 pF, which confirms that the TVS diode can be used for protecting high data rate communication lines (over 500 Mbps) from ESD shock.

  4. Improved Superconducting properties in the Mg(11)B2 low activation superconductor prepared by low-temperature sintering.

    PubMed

    Cheng, Fang; Liu, Yongchang; Ma, Zongqing; Shahriar Al Hossain, M; Somer, M

    2016-01-01

    Mg(11)B2 has a great application prospect in the superconducting coils for fusion reactor as the "low activation superconductors". The un-doped Mg(11)B2 and Cu-doped Mg(11)B2 bulks using (11)B as a boron precursor were fabricated by low-temperature sintering in present work. It was found that the prepared Mg(11)B2 low activation superconductors exhibit better Jc performance than all of other Mg(11)B2 samples reported in previous studies. As for Cu doped Mg(11)B2, minor Cu addition can obviously improve the Mg(11)B2 grain crystallization and reduce the amount of MgO impurity. Hence, improved grain connectivity and higher Jc at low fields is obtained in Cu doped Mg(11)B2 samples. For un-doped samples, refined grains and more MgO impurity with proper size brought about more flux pinning centers, resulting in better Jc performance at high fields. PMID:27149682

  5. Improved Superconducting properties in the Mg11B2 low activation superconductor prepared by low-temperature sintering

    PubMed Central

    Cheng, Fang; Liu, Yongchang; Ma, Zongqing; Shahriar Al Hossain, M.; Somer, M.

    2016-01-01

    Mg11B2 has a great application prospect in the superconducting coils for fusion reactor as the “low activation superconductors”. The un-doped Mg11B2 and Cu-doped Mg11B2 bulks using 11B as a boron precursor were fabricated by low-temperature sintering in present work. It was found that the prepared Mg11B2 low activation superconductors exhibit better Jc performance than all of other Mg11B2 samples reported in previous studies. As for Cu doped Mg11B2, minor Cu addition can obviously improve the Mg11B2 grain crystallization and reduce the amount of MgO impurity. Hence, improved grain connectivity and higher Jc at low fields is obtained in Cu doped Mg11B2 samples. For un-doped samples, refined grains and more MgO impurity with proper size brought about more flux pinning centers, resulting in better Jc performance at high fields. PMID:27149682

  6. Thermoelectric efficiency of holey topological insulators

    NASA Astrophysics Data System (ADS)

    Abanov, Artem; Tretiakov, Oleg; Sinova, Jairo

    2012-02-01

    We study the thermoelectric properties of three-dimensional topological insulators with many holes (or pores) in the bulk. We show that at high density of these holes the thermoelectric figure of merit, ZT, can be large due to the contribution of the conducting surfaces and the suppressed phonon thermal conductivity. The maximum efficiency can be tuned by an induced gap in the surface states dispersion through tunneling or external magnetic fields. The large values of ZT, much higher than unity for reasonable parameters, make this system a strong candidate for applications in heat management of nanodevices, especially at low temperatures.

  7. Atomic-level cotrol of the thermoelectric properties in polytypoid nanowires

    SciTech Connect

    Andrews, Sean C.; Fardy, Melissa A.; Moore, Michael C.; Aloni, Shaoul; Zhang, Minjuan; Radmilovic, Velimir; Yang, Peidong

    2010-10-23

    Thermoelectric materials have generated interest as a means of increasing the efficiency of power generation through the scavenging of waste heat. Materials containing nanometer-sized structural and compositional features can exhibit enhanced thermoelectric performance due to the decoupling of certain electrical and thermal properties, but the extent to which these features can be controlled is often limited. Here we report a simple synthesis of M{sub 2}O{sub 3}(ZnO){sub n} (M = In, Ga, Fe) nanowires with controllable polytypoid structures, where the nanostructured features are tuned by adjusting the amount of metal precursor. After the introduction of nanometer-scale features (individual atomic layers and alloying), thermal and electrical measurements on single In{sub 2-x}Ga{sub x}O3(ZnO){sub n} nanowires reveal a simultaneous improvement in all contributing factors to the thermoelectric figure of merit, indicating successful modification of the nanowire transport properties.

  8. Thermoelectric Properties of ZrNiSn-Based Half-Heusler Compounds

    NASA Astrophysics Data System (ADS)

    Yang, Jihui

    2002-03-01

    An increasing awareness of energy efficiency and environmental concerns has rekindled prospects for automotive and other applications of thermoelectric materials. For instance, getting “free” electric power from waste heat or obtaining cooling power from a solid-state device is very appealing for the automotive industry. ZrNiSn-based half-Heusler compounds show promising transport properties that make these materials of interest for thermoelectric power generation. The talk will focus on the effect on transport properties of alloying and doping on the various sublattices. New high temperature data will be presented that indicate that appropriately modified half-Heusler compounds possess very high power factor and relatively low thermal conductivity, leading to a dimensionless thermoelectric figure of merit ZT of 0.7 at 800 K. This is the highest ZT value for any half-Heusler compound reported so far.

  9. Thermoelectric properties of Sr0.61Ba0.39Nb2O6-δ ceramics in different oxygen-reduction conditions

    NASA Astrophysics Data System (ADS)

    Li, Yi; Liu, Jian; Wang, Chun-Lei; Su, Wen-Bin; Zhu, Yuan-Hu; Li, Ji-Chao; Mei, Liang-Mo

    2015-04-01

    The thermoelectric properties of Sr0.61Ba0.39Nb2O6-δ ceramics, reduced in different conditions, are investigated in the temperature range from 323 K to 1073 K. The electrical transport behaviors of the samples are dominated by the thermal-activated polaron hopping in the low temperature range, the Fermi glass behavior in the middle temperature range, and the Anderson localized behavior in the high temperature range. The thermal conductivity presents a plateau at high-temperatures, indicating a glass-like thermal conduction behavior. Both the thermoelectric power factor and the thermal conductivity increase with the increase of the degree of oxygen-reduction. Taking these two factors into account, the oxygen-reduction can still contribute to promoting the thermoelectric figure of merit. The highest ZT value is obtained to be ˜0.19 at 1073 K in the heaviest oxygen reduced sample. Project supported by the National Basic Research Program of China (Grant No. 2013CB632506) and the National Natural Science Foundation of China (Grant Nos. 51202132 and 51002087).

  10. Unravelling Doping Effects on PEDOT at the Molecular Level: From Geometry to Thermoelectric Transport Properties.

    PubMed

    Shi, Wen; Zhao, Tianqi; Xi, Jinyang; Wang, Dong; Shuai, Zhigang

    2015-10-14

    Tuning carrier concentration via chemical doping is the most successful strategy to optimize the thermoelectric figure of merit. Nevertheless, how the dopants affect charge transport is not completely understood. Here we unravel the doping effects by explicitly including the scattering of charge carriers with dopants on thermoelectric properties of poly(3,4-ethylenedioxythiophene), PEDOT, which is a p-type thermoelectric material with the highest figure of merit reported. We corroborate that the PEDOT exhibits a distinct transition from the aromatic to quinoid-like structure of backbone, and a semiconductor-to-metal transition with an increase in the level of doping. We identify a close-to-unity charge transfer from PEDOT to the dopant, and find that the ionized impurity scattering dominates over the acoustic phonon scattering in the doped PEDOT. By incorporating both scattering mechanisms, the doped PEDOT exhibits mobility, Seebeck coefficient and power factors in very good agreement with the experimental data, and the lightly doped PEDOT exhibits thermoelectric properties superior to the heavily doped one. We reveal that the thermoelectric transport is highly anisotropic in ordered crystals, and suggest to utilize large power factors in the direction of polymer backbone and low lattice thermal conductivity in the stacking and lamellar directions, which is viable in chain-oriented amorphous nanofibers.

  11. First-principle study of thermoelectric properties of impurity-doped magnesium silicide Mg2Si

    NASA Astrophysics Data System (ADS)

    Funashima, Hiroki

    2014-03-01

    The electronic structure and the thermoelectric properties of Mg2Si doped with several dopants, Al, Bi, Sb, and Zn, are theoretically examined using a first-principles calculation method. Mg2Si is a promising thermoelectric material that is functional in the temperature range from 500 to 800 K. Therefore, it is expected to be useful for recovering waste heat from exhaust gas in automotive applications, incinerators, and boilers. Moreover, this material has several desirable attributes with respect to cost and environmental protection: it is cheap, nontoxic, and composed of elements abundant on Earth. These advantages are important for practical usage in thermoelectric applications. Impurity doping is a well-established way to improve the thermoelectric performance of Mg2Si. Undoped Mg2Si crystals have n-type conductivity, but they can be doped with both n- and p-type impurities. A fundamental understanding of the relationship between impurity doping and the thermoelectric properties of Mg2Si will allow us to provide theoretical guidelines for further development of this material. As an effort toward this goal, we present here the band structure of Mg2Si using the full-potential linearized augmented plane-wave (FLAPW) method based on LDA/DFT and the conductivity.

  12. Thermoelectric properties of n-Type Mg2Si-Mg2Sn solid solutions with different grain sizes

    NASA Astrophysics Data System (ADS)

    Samunin, A. Yu.; Zaitsev, V. K.; Pshenay-Severin, D. A.; Konstantinov, P. P.; Isachenko, G. N.; Fedorov, M. I.; Novikov, S. V.

    2016-08-01

    Influence of the grain sizes on thermoelectric parameters of pressurized solid solutions of the composition Mg2Si0.8Sn0.2 was studied. The Seebeck coefficient, electric conductivity, thermal conductivity, and Hall coefficient were determined. Decreasing the grain size to the nanoscale was found to decrease the mobility at low temperatures and resulted in a peculiar temperature dependence of the electric conductivity, but did not lead to a decrease in the thermo EMF. It was found that the grain size had no effect on the thermoelectric efficiency of the investigated solid solution in the operating temperature range.

  13. Low temperature magnetic properties and spin dynamics in single crystals of Cr{sub 8}Zn antiferromagnetic molecular rings

    SciTech Connect

    Adelnia, Fatemeh; Chiesa, Alessandro; Bordignon, Sara; Carretta, Stefano; Ghirri, Alberto; Candini, Andrea; Cervetti, Christian; Evangelisti, Marco; Affronte, Marco; Sheikin, Ilya; Winpenny, Richard; Timco, Grigore; Borsa, Ferdinando; and others

    2015-12-28

    A detailed experimental investigation of the effects giving rise to the magnetic energy level structure in the vicinity of the level crossing (LC) at low temperature is reported for the open antiferromagnetic molecular ring Cr{sub 8}Zn. The study is conducted by means of thermodynamic techniques (torque magnetometry, magnetization and specific heat measurements) and microscopic techniques (nuclear magnetic resonance line width, nuclear spin lattice, and spin-spin relaxation measurements). The experimental results are shown to be in excellent agreement with theoretical calculations based on a minimal spin model Hamiltonian, which includes a Dzyaloshinskii-Moriya interaction. The first ground state level crossing at μ{sub 0}H{sub c1} = 2.15 T is found to be an almost true LC while the second LC at μ{sub 0}H{sub c2} = 6.95 T has an anti-crossing gap of Δ{sub 12} = 0.19 K. In addition, both NMR and specific heat measurements show the presence of a level anti-crossing between excited states at μ{sub 0}H = 4.5 T as predicted by the theory. In all cases, the fit of the experimental data is improved by introducing a distribution of the isotropic exchange couplings (J), i.e., using a J strain model. The peaks at the first and second LCs in the nuclear spin-lattice relaxation rate are dominated by inelastic scattering and a value of Γ ∼ 10{sup 10} rad/s is inferred for the life time broadening of the excited state of the open ring, due to spin phonon interaction. A loss of NMR signal (wipe-out effect) is observed for the first time at LC and is explained by the enhancement of the spin-spin relaxation rate due to the inelastic scattering.

  14. Low temperature magnetic properties and spin dynamics in single crystals of Cr8Zn antiferromagnetic molecular rings.

    PubMed

    Adelnia, Fatemeh; Chiesa, Alessandro; Bordignon, Sara; Carretta, Stefano; Ghirri, Alberto; Candini, Andrea; Cervetti, Christian; Evangelisti, Marco; Affronte, Marco; Sheikin, Ilya; Winpenny, Richard; Timco, Grigore; Borsa, Ferdinando; Lascialfari, Alessandro

    2015-12-28

    A detailed experimental investigation of the effects giving rise to the magnetic energy level structure in the vicinity of the level crossing (LC) at low temperature is reported for the open antiferromagnetic molecular ring Cr8Zn. The study is conducted by means of thermodynamic techniques (torque magnetometry, magnetization and specific heat measurements) and microscopic techniques (nuclear magnetic resonance line width, nuclear spin lattice, and spin-spin relaxation measurements). The experimental results are shown to be in excellent agreement with theoretical calculations based on a minimal spin model Hamiltonian, which includes a Dzyaloshinskii-Moriya interaction. The first ground state level crossing at μ0Hc1 = 2.15 T is found to be an almost true LC while the second LC at μ0Hc2 = 6.95 T has an anti-crossing gap of Δ12 = 0.19 K. In addition, both NMR and specific heat measurements show the presence of a level anti-crossing between excited states at μ0H = 4.5 T as predicted by the theory. In all cases, the fit of the experimental data is improved by introducing a distribution of the isotropic exchange couplings (J), i.e., using a J strain model. The peaks at the first and second LCs in the nuclear spin-lattice relaxation rate are dominated by inelastic scattering and a value of Γ ∼ 10(10) rad/s is inferred for the life time broadening of the excited state of the open ring, due to spin phonon interaction. A loss of NMR signal (wipe-out effect) is observed for the first time at LC and is explained by the enhancement of the spin-spin relaxation rate due to the inelastic scattering. PMID:26723685

  15. Electronic, Vibrational and Thermoelectric Properties of Two-Dimensional Materials

    NASA Astrophysics Data System (ADS)

    Wickramaratne, Darshana

    The discovery of graphene's unique electronic and thermal properties has motivated the search for new two-dimensional materials. Examples of these materials include the layered two-dimensional transition metal dichalcogenides (TMDC) and metal mono-chalcogenides. The properties of the TMDCs (eg. MoS 2, WS2, TaS2, TaSe2) and the metal mono-chalcogenides (eg. GaSe, InSe, SnS) are diverse - ranging from semiconducting, semi-metallic and metallic. Many of these materials exhibit strongly correlated phenomena and exotic collective states such as exciton condensates, charge density waves, Lifshitz transitions and superconductivity. These properties change as the film thickness is reduced down to a few monolayers. We use first-principles simulations to discuss changes in the electronic and the vibrational properties of these materials as the film thickness evolves from a single atomic monolayer to the bulk limit. In the semiconducting TMDCs (MoS2, MoSe2, WS2 and WSe2) and monochalcogenides (GaS, GaSe, InS and InSe) we show confining these materials to their monolayer limit introduces large band degeneracies or non-parabolic features in the electronic structure. These changes in the electronic structure results in increases in the density of states and the number of conducting modes. Our first-principles simulations combined with a Landauer approach show these changes can lead to large enhancements up to an order of magnitude in the thermoelectric performance of these materials when compared to their bulk structure. Few monolayers of the TMDCs can be misoriented with respect to each other due to the weak van-der-Waals (vdW) force at the interface of two monolayers. Misorientation of the bilayer semiconducting TMDCs increases the interlayer van-der-Waals gap distance, reduces the interlayer coupling and leads to an increase in the magnitude of the indirect bandgap by up to 100 meV compared to the registered bilayer. In the semi-metallic and metallic TMDC compounds (TiSe2, Ta

  16. Tribological Properties of a Pennzane(Registered Trademark)-Based Liquid Lubricant (Disubstituted Alkylated Cyclopentane) for Low Temperature Space Applications

    NASA Technical Reports Server (NTRS)

    Venier, Clifford; Casserly, Edward W.; Jones, William R., Jr.; Marchetti, Mario; Jansen, Mark J.; Predmore, Roamer E.

    2002-01-01

    The tribological properties of a disubstituted alkylated cyclopentane, Pennzane (registered) Synthesized Hydrocarbon Fluid X-1000, are presented. This compound is a lower molecular weight version of the commonly used multiply alkylated cyclopentane, Pennzane X-2000, currently used in many space mechanisms. New, lower temperature applications will require liquid lubricants with lower viscosities and pour points and acceptable vapor pressures. Properties reported include: friction and wear studies and lubricated lifetime in vacuum; additionally, typical physical properties (i.e., viscosity-temperature, pour point, flash and fire point, specific gravity, refractive index, thermal properties, volatility and vapor pressure) are reported.

  17. Enhanced Thermoelectric Properties in Tailored Semiconducting SWCNT Networks

    NASA Astrophysics Data System (ADS)

    Avery, A. D.; Zhou, B. H.; Lee, J.; Lee, E.; Miller, E. M.; Ihly, R.; Wesenberg, D.; Mistry, K. S.; Guillot, S. L.; Zink, B. L.; Kim, Y.; Blackburn, J. L.; Ferguson, A. J.

    Single-walled carbon nanotubes (SWCNTs) are a versatile electronic material being explored as cost-effective, high-performance alternative in a variety of renewable energy applications. In this talk, we present a series of experiments designed to probe the thermal and electrical transport through networks of semiconducting SWCNT dispersed in matrices of polyfluorene polymers. We measured electrical transport as a function of hole density to explore the coupling between the electrical conductivity and Seebeck coefficient (thermopower) in the s-SWCNT networks. These networks exhibit large thermopowers > 1000 μV/K at very low hole densities. Thermopower values remain high at high doping levels, resulting in thermoelectric power factors greater than 340 μW/m K. Finally, we present measurements that demonstrate our doping process significantly reduces the thermal conductivity relative to undoped networks suggesting s-SWCNTs are a viable material for realizing thermally stable room temperature thermoelectric devices fashioned from inexpensive and abundant organic constituents.

  18. Nanocrystalline silicon: Lattice dynamics and enhanced thermoelectric properties

    SciTech Connect

    Claudio, Tania; Stein, Niklas; Stroppa, Daniel G.; Klobes, Benedikt; Koza, Michael Marek; Kudejova, Petra; Petermann, Nils; Wiggers, Hartmut; Schierning, Gabi; Hermann, Raphaël P.

    2014-12-21

    In this study, silicon has several advantages when compared to other thermoelectric materials, but until recently it was not used for thermoelectric applications due to its high thermal conductivity, 156 W K-1 m-1 at room temperature. Nanostructuration as means to decrease thermal transport through enhanced phonon scattering has been a subject of many studies. In this work we have evaluated the effects of nanostructuration on the lattice dynamics of bulk nanocrystalline doped silicon. The samples were prepared by gas phase synthesis, followed by current and pressure assisted sintering. The heat capacity, density of phonons states, and elastic constants were measured, which all reveal a significant, ≈25%, reduction in the speed of sound. The samples present a significantly decreased lattice thermal conductivity, ≈25 W K-1 m-1, which, combined with a very high carrier mobility, results in a dimensionless figure of merit with a competitive value that peaks at ZT ≈ 0.57 at 973 °C. Due to its easily scalable and extremely low-cost production process, nanocrystalline Si prepared by gas phase synthesis followed by sintering could become the material of choice for high temperature thermoelectric generators.

  19. Nanocrystalline silicon: Lattice dynamics and enhanced thermoelectric properties

    DOE PAGES

    Claudio, Tania; Stein, Niklas; Stroppa, Daniel G.; Klobes, Benedikt; Koza, Michael Marek; Kudejova, Petra; Petermann, Nils; Wiggers, Hartmut; Schierning, Gabi; Hermann, Raphaël P.

    2014-12-21

    In this study, silicon has several advantages when compared to other thermoelectric materials, but until recently it was not used for thermoelectric applications due to its high thermal conductivity, 156 W K-1 m-1 at room temperature. Nanostructuration as means to decrease thermal transport through enhanced phonon scattering has been a subject of many studies. In this work we have evaluated the effects of nanostructuration on the lattice dynamics of bulk nanocrystalline doped silicon. The samples were prepared by gas phase synthesis, followed by current and pressure assisted sintering. The heat capacity, density of phonons states, and elastic constants were measured,more » which all reveal a significant, ≈25%, reduction in the speed of sound. The samples present a significantly decreased lattice thermal conductivity, ≈25 W K-1 m-1, which, combined with a very high carrier mobility, results in a dimensionless figure of merit with a competitive value that peaks at ZT ≈ 0.57 at 973 °C. Due to its easily scalable and extremely low-cost production process, nanocrystalline Si prepared by gas phase synthesis followed by sintering could become the material of choice for high temperature thermoelectric generators.« less

  20. Nanocrystalline silicon: lattice dynamics and enhanced thermoelectric properties.

    PubMed

    Claudio, Tania; Stein, Niklas; Stroppa, Daniel G; Klobes, Benedikt; Koza, Michael Marek; Kudejova, Petra; Petermann, Nils; Wiggers, Hartmut; Schierning, Gabi; Hermann, Raphaël P

    2014-12-21

    Silicon has several advantages when compared to other thermoelectric materials, but until recently it was not used for thermoelectric applications due to its high thermal conductivity, 156 W K(-1) m(-1) at room temperature. Nanostructuration as means to decrease thermal transport through enhanced phonon scattering has been a subject of many studies. In this work we have evaluated the effects of nanostructuration on the lattice dynamics of bulk nanocrystalline doped silicon. The samples were prepared by gas phase synthesis, followed by current and pressure assisted sintering. The heat capacity, density of phonons states, and elastic constants were measured, which all reveal a significant, ≈25%, reduction in the speed of sound. The samples present a significantly decreased lattice thermal conductivity, ≈25 W K(-1) m(-1), which, combined with a very high carrier mobility, results in a dimensionless figure of merit with a competitive value that peaks at ZT≈ 0.57 at 973 °C. Due to its easily scalable and extremely low-cost production process, nanocrystalline Si prepared by gas phase synthesis followed by sintering could become the material of choice for high temperature thermoelectric generators. PMID:24848359

  1. Full-scale computation for all the thermoelectric property parameters of half-Heusler compounds

    PubMed Central

    Hong, A. J.; Li, L.; He, R.; Gong, J. J.; Yan, Z. B.; Wang, K. F.; Liu, J. -M.; Ren, Z. F.

    2016-01-01

    The thermoelectric performance of materials relies substantially on the band structures that determine the electronic and phononic transports, while the transport behaviors compete and counter-act for the power factor PF and figure-of-merit ZT. These issues make a full-scale computation of the whole set of thermoelectric parameters particularly attractive, while a calculation scheme of the electronic and phononic contributions to thermal conductivity remains yet challenging. In this work, we present a full-scale computation scheme based on the first-principles calculations by choosing a set of doped half-Heusler compounds as examples for illustration. The electronic structure is computed using the WIEN2k code and the carrier relaxation times for electrons and holes are calculated using the Bardeen and Shockley’s deformation potential (DP) theory. The finite-temperature electronic transport is evaluated within the framework of Boltzmann transport theory. In sequence, the density functional perturbation combined with the quasi-harmonic approximation and the Klemens’ equation is implemented for calculating the lattice thermal conductivity of carrier-doped thermoelectric materials such as Ti-doped NbFeSb compounds without losing a generality. The calculated results show good agreement with experimental data. The present methodology represents an effective and powerful approach to calculate the whole set of thermoelectric properties for thermoelectric materials. PMID:26947395

  2. Full-scale computation for all the thermoelectric property parameters of half-Heusler compounds.

    PubMed

    Hong, A J; Li, L; He, R; Gong, J J; Yan, Z B; Wang, K F; Liu, J-M; Ren, Z F

    2016-01-01

    The thermoelectric performance of materials relies substantially on the band structures that determine the electronic and phononic transports, while the transport behaviors compete and counter-act for the power factor PF and figure-of-merit ZT. These issues make a full-scale computation of the whole set of thermoelectric parameters particularly attractive, while a calculation scheme of the electronic and phononic contributions to thermal conductivity remains yet challenging. In this work, we present a full-scale computation scheme based on the first-principles calculations by choosing a set of doped half-Heusler compounds as examples for illustration. The electronic structure is computed using the WIEN2k code and the carrier relaxation times for electrons and holes are calculated using the Bardeen and Shockley's deformation potential (DP) theory. The finite-temperature electronic transport is evaluated within the framework of Boltzmann transport theory. In sequence, the density functional perturbation combined with the quasi-harmonic approximation and the Klemens' equation is implemented for calculating the lattice thermal conductivity of carrier-doped thermoelectric materials such as Ti-doped NbFeSb compounds without losing a generality. The calculated results show good agreement with experimental data. The present methodology represents an effective and powerful approach to calculate the whole set of thermoelectric properties for thermoelectric materials.

  3. Optimization of the thermoelectric properties of FeNbSb-based half-Heusler materials

    NASA Astrophysics Data System (ADS)

    Li, Wenfeng; Yang, Gui; Zhang, Jianwei

    2016-05-01

    FeNbSb-based half-Heusler compounds have recently been reported as promising materials for good high-temperature thermoelectric materials with a ZT  >  1. Their electronic structure and thermoelectric properties are investigated based on a first-principles simulation and the semi-classical Boltzmann transport theory. The band structures show not only light and heavy bands but also high band degeneracy near the valence band maximum, which is beneficial for thermoelectric performance. The calculated Seebeck coefficients of p-type FeNbSb at high carrier concentrations exhibit the expected high values, which is consistent with experimental data. The evolution of the electrical conductivity and power factor with carrier concentration at different temperatures is investigated. Our results show that the thermoelectric performance of p-type FeNbSb can be improved by appropriate substitution; for example, by doping Hf on the Nb site, the maximum ZT of the p-type FeNb1-x Hf x Sb can reach ~1.5 at 1200 K. This study can provide some theoretical guidance for experimental research to improve the thermoelectric performance of FeNbSb-based half-Heusler compounds.

  4. Full-scale computation for all the thermoelectric property parameters of half-Heusler compounds

    DOE PAGES

    Hong, A. J.; Li, L.; He, R.; Gong, J. J.; Yan, Z. B.; Wang, K. F.; Liu, J. -M.; Ren, Z. F.

    2016-03-07

    The thermoelectric performance of materials relies substantially on the band structures that determine the electronic and phononic transports, while the transport behaviors compete and counter-act for the power factor PF and figure-of-merit ZT. These issues make a full-scale computation of the whole set of thermoelectric parameters particularly attractive, while a calculation scheme of the electronic and phononic contributions to thermal conductivity remains yet challenging. In this work, we present a full-scale computation scheme based on the first-principles calculations by choosing a set of doped half- Heusler compounds as examples for illustration. The electronic structure is computed using the WIEN2k codemore » and the carrier relaxation times for electrons and holes are calculated using the Bardeen and Shockley’s deformation potential (DP) theory. The finite-temperature electronic transport is evaluated within the framework of Boltzmann transport theory. In sequence, the density functional perturbation combined with the quasi-harmonic approximation and the Klemens’ equation is implemented for calculating the lattice thermal conductivity of carrier-doped thermoelectric materials such as Tidoped NbFeSb compounds without losing a generality. The calculated results show good agreement with experimental data. Lastly, the present methodology represents an effective and powerful approach to calculate the whole set of thermoelectric properties for thermoelectric materials.« less

  5. Full-scale computation for all the thermoelectric property parameters of half-Heusler compounds

    NASA Astrophysics Data System (ADS)

    Hong, A. J.; Li, L.; He, R.; Gong, J. J.; Yan, Z. B.; Wang, K. F.; Liu, J.-M.; Ren, Z. F.

    2016-03-01

    The thermoelectric performance of materials relies substantially on the band structures that determine the electronic and phononic transports, while the transport behaviors compete and counter-act for the power factor PF and figure-of-merit ZT. These issues make a full-scale computation of the whole set of thermoelectric parameters particularly attractive, while a calculation scheme of the electronic and phononic contributions to thermal conductivity remains yet challenging. In this work, we present a full-scale computation scheme based on the first-principles calculations by choosing a set of doped half-Heusler compounds as examples for illustration. The electronic structure is computed using the WIEN2k code and the carrier relaxation times for electrons and holes are calculated using the Bardeen and Shockley’s deformation potential (DP) theory. The finite-temperature electronic transport is evaluated within the framework of Boltzmann transport theory. In sequence, the density functional perturbation combined with the quasi-harmonic approximation and the Klemens’ equation is implemented for calculating the lattice thermal conductivity of carrier-doped thermoelectric materials such as Ti-doped NbFeSb compounds without losing a generality. The calculated results show good agreement with experimental data. The present methodology represents an effective and powerful approach to calculate the whole set of thermoelectric properties for thermoelectric materials.

  6. Full-scale computation for all the thermoelectric property parameters of half-Heusler compounds.

    PubMed

    Hong, A J; Li, L; He, R; Gong, J J; Yan, Z B; Wang, K F; Liu, J-M; Ren, Z F

    2016-01-01

    The thermoelectric performance of materials relies substantially on the band structures that determine the electronic and phononic transports, while the transport behaviors compete and counter-act for the power factor PF and figure-of-merit ZT. These issues make a full-scale computation of the whole set of thermoelectric parameters particularly attractive, while a calculation scheme of the electronic and phononic contributions to thermal conductivity remains yet challenging. In this work, we present a full-scale computation scheme based on the first-principles calculations by choosing a set of doped half-Heusler compounds as examples for illustration. The electronic structure is computed using the WIEN2k code and the carrier relaxation times for electrons and holes are calculated using the Bardeen and Shockley's deformation potential (DP) theory. The finite-temperature electronic transport is evaluated within the framework of Boltzmann transport theory. In sequence, the density functional perturbation combined with the quasi-harmonic approximation and the Klemens' equation is implemented for calculating the lattice thermal conductivity of carrier-doped thermoelectric materials such as Ti-doped NbFeSb compounds without losing a generality. The calculated results show good agreement with experimental data. The present methodology represents an effective and powerful approach to calculate the whole set of thermoelectric properties for thermoelectric materials. PMID:26947395

  7. Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment

    NASA Astrophysics Data System (ADS)

    Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liang, Shu-Ping; Young, Tai-Fa; Syu, Yong-En; Sze, Simon M.

    2016-02-01

    Bipolar switching resistance behaviors of the Gd:SiO2 resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO2-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO2 RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO2 RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices.

  8. Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment.

    PubMed

    Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liang, Shu-Ping; Young, Tai-Fa; Syu, Yong-En; Sze, Simon M

    2016-12-01

    Bipolar switching resistance behaviors of the Gd:SiO2 resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO2-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO2 RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO2 RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices.

  9. Spin effects in thermoelectric properties of Al- and P-doped zigzag silicene nanoribbons

    NASA Astrophysics Data System (ADS)

    Zberecki, K.; Swirkowicz, R.; Barnaś, J.

    2014-04-01

    Electric and thermoelectric properties of silicene nanoribbons doped with Al and P impurity atoms are investigated theoretically for both antiparallel and parallel orientations of the edge magnetic moments. In the former case, appropriately arranged impurities can lead to a net magnetic moment, and thus also to spin dependent transport and spin thermoelectric phenomena. In the latter case, in turn, spin thermoelectric effects also occur in the absence of impurities. To calculate spin density distribution and transport parameters we use ab initio numerical methods based on the density functional theory. The obtained results clearly show that the spin thermopower can be considerably enhanced by the impurities. This enhancement appears in certain regions of chemical potential.

  10. Dependence of thermoelectric properties of lead salt thin films on film thickness

    NASA Astrophysics Data System (ADS)

    Rogacheva, E. I.; Tavrina, T. V.; Grigorov, S. N.; Nashchekina, O. N.; Nasedkin, K. A.; Vekhov, Ye. O.; Sipatov, A. Yu.; Volubnev, V. V.; Cronin, S. B.; Rabin, O.; Dresselhaus, M. S.

    2002-03-01

    The dependence of the thermoelectric properties of thin film lead salts (PbTe, PbSe, and PbS) grown on (001)KCl substrates was investigated as a function of film thickness d with and without a protective cap layer of 30 nm thick EuS. The differences in behavior between the various members of this lead salt family are discussed regarding the various thermoelectric parameters (electrical conductivity, Seebeck coefficient, Hall coefficient, carrier mobility and power factor). Effects relating to oxidation, island formation, percolation, carrier sign inversion, lattice mismatch and non-monotonic and oscillatory thickness dependences of the thermoelectric parameters, are discussed. What can be learned by studying a family of compounds is emphasized.

  11. Low temperature fluid blender

    NASA Technical Reports Server (NTRS)

    Repas, G. A.

    1971-01-01

    Blender supplies hydrogen at temperatures from 289 deg K to 367 deg K. Hydrogen temperature is controlled by using blender to combine flow from liquid hydrogen tank /276 deg K/ and gaseous hydrogen cylinder /550 deg K/. Blenders are applicable where flow of controlled low-temperature fluid is desired.

  12. Attaining Low Temperatures

    ERIC Educational Resources Information Center

    Wheatley, John D.; Van Till, Howard J.

    1970-01-01

    Discusses the definition of temperature and the concept of order in non-mathematical terms. Describes the cooling techniques necessary in low temperature physics research, including magnetic cooling, the use of the Pomeranchuk Effect, and dilution refrigeration. Outlines the types of phenomena observed in matter within various temperature ranges…

  13. Photo- and gas-tuned, reversible thermoelectric properties and anomalous photo-thermoelectric effects of platinum-loaded tungsten trioxide

    NASA Astrophysics Data System (ADS)

    Suzuki, Kenta; Watanabe, Takuya; Kakemoto, Hirofumi; Irie, Hiroshi

    2016-06-01

    We report the photo- and gas-controllable properties of platinum-loaded tungsten trioxide (Pt/WO3), which is of interest for developing practical applications of WO3 as well as for interpreting such phenomena from scientific viewpoints. Here, a Pt/WO3 thin film generated a thermoelectric power due to the ultraviolet-light-induced band-gap excitation (photochromic (PC) reaction) and/or dark storage in formic acid vapor (gaschromic (GC) reaction) in the absence of O2, resulting from the generation of W5+ ions. After such chromic reactions, the electrical conductivity (σ) is increased, whereas the absolute value of the Seebeck coefficient (S) is decreased. The changes in σ and S and their rate of change for consistency increased in the order of: during the PC reaction < during the GC reaction < during simultaneous PC and GC reactions. The opposite behaviors, a decrease in σ and an increase in S, were exhibited by Pt/WO3 in the presence of O2 after dark storage or visible-light irradiation. This reversible cycle could be repeated. Moreover, anomalous, nontrivial photo-thermoelectric effects (a photoconductive effect (photoconductivity, σphoto) and a photo-Seebeck effect (photo-Seebeck coefficient, Sphoto)) were also detected in response to the visible-light irradiation of Pt/WO3 in the absence of O2 after chromic reactions. Under visible-light irradiation, both σphoto and the absolute value of Sphoto are increased. After the irradiation, both values were decreased, that is, σ and the absolute value of S were smaller than σphoto and the absolute value of Sphoto, respectively. These effects are likely to be due to the photoinduced charge carriers and the accumulated electrons in Pt contributing to the increase in σphoto. In addition, electrons are extracted from the W5+ state, decreasing the number of W5+ in HxWO3 and thus contributing to the increase in Sphoto. After light irradiation, the accumulated electrons in Pt are returned to the energetically favorable W

  14. Structural and optical properties of Ag-doped copper oxide thin films on polyethylene napthalate substrate prepared by low temperature microwave annealing

    SciTech Connect

    Das, Sayantan; Alford, T. L.

    2013-06-28

    Silver doped cupric oxide thin films are prepared on polyethylene naphthalate (flexible polymer) substrates. Thin films Ag-doped CuO are deposited on the substrate by co-sputtering followed by microwave assisted oxidation of the metal films. The low temperature tolerance of the polymer substrates led to the search for innovative low temperature processing techniques. Cupric oxide is a p-type semiconductor with an indirect band gap and is used as selective absorption layer solar cells. X-ray diffraction identifies the CuO phases. Rutherford backscattering spectrometry measurements confirm the stoichiometry of each copper oxide formed. The surface morphology is determined by atomic force microscopy. The microstructural properties such as crystallite size and the microstrain for (-111) and (111) planes are calculated and discussed. Incorporation of Ag led to the lowering of band gap in CuO. Consequently, it is determined that Ag addition has a strong effect on the structural, morphological, surface, and optical properties of CuO grown on flexible substrates by microwave annealing. Tauc's plot is used to determine the optical band gap of CuO and Ag doped CuO films. The values of the indirect and direct band gap for CuO are found to be 2.02 eV and 3.19 eV, respectively.

  15. Highly uniform resistive switching properties of amorphous InGaZnO thin films prepared by a low temperature photochemical solution deposition method.

    PubMed

    Hu, Wei; Zou, Lilan; Chen, Xinman; Qin, Ni; Li, Shuwei; Bao, Dinghua

    2014-04-01

    We report on highly uniform resistive switching properties of amorphous InGaZnO (a-IGZO) thin films. The thin films were fabricated by a low temperature photochemical solution deposition method, a simple process combining chemical solution deposition and ultraviolet (UV) irradiation treatment. The a-IGZO based resistive switching devices exhibit long retention, good endurance, uniform switching voltages, and stable distribution of low and high resistance states. Electrical conduction mechanisms were also discussed on the basis of the current-voltage characteristics and their temperature dependence. The excellent resistive switching properties can be attributed to the reduction of organic- and hydrogen-based elements and the formation of enhanced metal-oxide bonding and metal-hydroxide bonding networks by hydrogen bonding due to UV irradiation, based on Fourier-transform-infrared spectroscopy, X-ray photoelectron spectroscopy, and Field emission scanning electron microscopy analysis of the thin films. This study suggests that a-IGZO thin films have potential applications in resistive random access memory and the low temperature photochemical solution deposition method can find the opportunity for further achieving system on panel applications if the a-IGZO resistive switching cells were integrated with a-IGZO thin film transistors.

  16. Annealing effects on the optical and morphological properties of ZnO nanorods on AZO substrate by using aqueous solution method at low temperature

    PubMed Central

    2014-01-01

    Vertically aligned ZnO nanorods (NRs) on aluminum-doped zinc oxide (AZO) substrates were fabricated by a single-step aqueous solution method at low temperature. In order to optimize optical quality, the effects of annealing on optical and structural properties were investigated by scanning electron microscopy, X-ray diffraction, photoluminescence (PL), and Raman spectroscopy. We found that the annealing temperature strongly affects both the near-band-edge (NBE) and visible (defect-related) emissions. The best characteristics have been obtained by employing annealing at 400°C in air for 2 h, bringing about a sharp and intense NBE emission. The defect-related recombinations were also suppressed effectively. However, the enhancement decreases with higher annealing temperature and prolonged annealing. PL study indicates that the NBE emission is dominated by radiative recombination associated with hydrogen donors. Thus, the enhancement of NBE is due to the activation of radiative recombinations associated with hydrogen donors. On the other hand, the reduction of visible emission is mainly attributed to the annihilation of OH groups. Our results provide insight to comprehend annealing effects and an effective way to improve optical properties of low-temperature-grown ZnO NRs for future facile device applications. PMID:25520589

  17. An Experimental Investigation towards Improvement of Thermoelectric Properties of Strontium Titanate Ceramics

    NASA Astrophysics Data System (ADS)

    Mehdizadeh Dehkordi, Arash

    The direct energy conversion between heat and electricity based on thermoelectric effects is a topic of long-standing interest in condensed matter materials science. Experimental and theoretical investigations in order to understand the mechanisms involved and to improve the materials properties and conversion efficiency have been ongoing for more than half a century. While significant achievements have been accomplished in improving the properties of conventional heavy element based materials (such as Bi2Te 3 and PbTe) as well as the discovery of new materials systems for the close-to-room temperature and intermediate temperatures, high-temperature applications of thermoelectrics is still limited to one materials system, namely SiGe. Recently, oxides have exhibited great potential to be investigated for high-temperature thermoelectric power generation. The objective of this dissertation is to synthesize and investigate both electronic and thermal transport in strontium titanate (SrTiO3) ceramics in order to experimentally realize its potential and to ultimately investigate the possibility of further improvement of the thermoelectric performance of this perovskite oxide for mid- to high temperature applications. Developing a synthesis strategy and tuning various synthesis parameters to benefit the thermoelectric transport form the foundation of this study. It is worth mentioning that the results of this study has been employed to prepare targets for pulsed-laser deposition (PLD) to study the thermoelectric properties of corresponding thin films and superlattice structures at Dr. Husam Alshareef's group at King Abdullah University of Science and Technology (KAUST), Saudi Arabia. Considering the broad range of functionality of SrTiO3, the findings of this work will surely benefit other fields of research and application of this functional oxide such as photoluminescence, ferroelectricity or mixed-ionic electronic conductivity. This dissertation will ultimately

  18. Electronic, Optical and Thermoelectric Properties of 2H-CuAlO2: A First Principles Study

    NASA Astrophysics Data System (ADS)

    Bhamu, K. C.; Khenata, R.; Khan, Saleem Ayaz; Singh, Mangej; Priolkar, K. R.

    2016-01-01

    The electronic and optical properties of 2H-CuAlO2, including energy bands, density of states (DOS), optical dielectric behaviour, refractive index, absorption coefficient and optical conductivity, have been investigated within the framework of a full-potential linearized augmented plane wave scheme using different potentials. The direct and indirect band gaps for CuAlO2, computed using the Becke-Johnson potential, are estimated at 3.53 eV and 2.48 eV, respectively, which are in better agreement with the experimentally reported band gaps than those previously computed. The origin of energy bands is elucidated in terms of DOS, while the behaviour of the imaginary part of the dielectric constant is explained in terms of electronic transitions from valence bands to conduction bands. The computed value of the refractive index is 2.25 (1.94) for light perpendicular (parallel) to the c axis, in concordance with the available values. The overall shape of the spectral distribution for absorption coefficient and optical conductivity is also in accord with the reported data. The investigated thermoelectric properties indicate that CuAlO2 is a p-type semiconductor showing high effectiveness at low temperatures.

  19. Effect of arc suppression on the physical properties of low temperature dc magnetron sputtered tantalum thin films

    SciTech Connect

    Subrahmanyam, A.; Valleti, Krishna; Joshi, Srikant V.; Sundararajan, G.

    2007-03-15

    Arcing is a common phenomenon in the sputtering process. Arcs and glow discharges emit electrons which may influence the physical properties of films. This article reports the properties of tantalum (Ta) thin films prepared by continuous dc magnetron sputtering in normal and arc-suppression modes. The substrate temperature was varied in the range of 300-673 K. The tantalum films were {approx}1.8 {mu}m thick and have good adherence to 316 stainless steel and single-crystal silicon substrates. The phase of the Ta thin film determines the electrical and tribological properties. The films deposited at 300 K using both methods were crystallized in a tetragonal structure ({beta} phase) with a smooth surface (grain size of {approx}10 nm) and exhibited an electrical resistivity of {approx}194 {mu}{omega} cm and a hardness of {approx}20 GPa. When the substrate temperature was 473 K and higher, the arc-suppression mode appears to influence the films to crystallize in the {alpha} phase with a grain size of {approx}40 nm, whereas the normal power mode gave mixed phases {beta} and {alpha} beyond 473 K, the arc-suppression mode yields larger grain sizes in the Ta thin films and the hardness decreases. These changes in the physical properties in arc-suppression mode are attributed to either the change in plasma characteristics or the energetic particle bombardment onto the substrate, or both.

  20. Thermoelectric properties of silicene in the topological- and band-insulator states

    NASA Astrophysics Data System (ADS)

    Wierzbicki, Michał; Barnaś, Józef; Swirkowicz, Renata

    2015-04-01

    Thermoelectric effects in silicene nanoribbons are analyzed theoretically and numerically. The main focus is on the influence of topological edge states and transition between the topological-insulator and conventional gap-insulator states on the thermoelectric properties, and especially on the spin-related thermoelectric effects. The model includes a staggered exchange field and also an external electric field normal to the atomic plane. Both fields separately open a gap in the edge states and therefore lead to a nonzero thermopower in the vicinity of the gap edges. Interplay of both fields leads to a spin-dependent gap, and thus gives rise to a spin thermopower in addition to the conventional Seebeck effect. The role of the Coulomb interaction taken in the form of the Hubbard term in the mean-field approximation is also analyzed. This interaction leads to antiparallel configuration of the edge magnetic moments in the ground state. It is shown that the Coulomb interaction significantly modifies topological properties of the materials, and thus also their transport and thermoelectric properties.

  1. Structurally-driven Enhancement of Thermoelectric Properties within Poly(3,4-ethylenedioxythiophene) thin Films

    NASA Astrophysics Data System (ADS)

    Petsagkourakis, Ioannis; Pavlopoulou, Eleni; Portale, Giuseppe; Kuropatwa, Bryan A.; Dilhaire, Stefan; Fleury, Guillaume; Hadziioannou, Georges

    2016-07-01

    Due to the rising need for clean energy, thermoelectricity has raised as a potential alternative to reduce dependence on fossil fuels. Specifically, thermoelectric devices based on polymers could offer an efficient path for near-room temperature energy harvesters. Thus, control over thermoelectric properties of conducting polymers is crucial and, herein, the structural, electrical and thermoelectric properties of poly(3,4-ethylenedioxythiophene) (PEDOT) thin films doped with p-toluenesulfonate (Tos) molecules were investigated with regards to thin film processing. PEDOT:Tos thin films were prepared by in-situ polymerization of (3,4-ethylenedioxythiophene) monomers in presence of iron(III) p-toluenesulfonate with different co-solvents in order to tune the film structure. While the Seebeck coefficient remained constant, a large improvement in the electrical conductivity was observed for thin films processed with high boiling point additives. The increase of electrical conductivity was found to be solely in-plane mobility-driven. Probing the thin film structure by Grazing Incidence Wide Angle X-ray Scattering has shown that this behavior is dictated by the structural properties of the PEDOT:Tos films; specifically by the thin film crystallinity combined to the preferential edge-on orientation of the PEDOT crystallites. Consequentially enhancement of the power factor from 25 to 78.5 μW/mK2 has been readily obtained for PEDOT:Tos thin films following this methodology.

  2. Structurally-driven Enhancement of Thermoelectric Properties within Poly(3,4-ethylenedioxythiophene) thin Films

    PubMed Central

    Petsagkourakis, Ioannis; Pavlopoulou, Eleni; Portale, Giuseppe; Kuropatwa, Bryan A.; Dilhaire, Stefan; Fleury, Guillaume; Hadziioannou, Georges

    2016-01-01

    Due to the rising need for clean energy, thermoelectricity has raised as a potential alternative to reduce dependence on fossil fuels. Specifically, thermoelectric devices based on polymers could offer an efficient path for near-room temperature energy harvesters. Thus, control over thermoelectric properties of conducting polymers is crucial and, herein, the structural, electrical and thermoelectric properties of poly(3,4-ethylenedioxythiophene) (PEDOT) thin films doped with p-toluenesulfonate (Tos) molecules were investigated with regards to thin film processing. PEDOT:Tos thin films were prepared by in-situ polymerization of (3,4-ethylenedioxythiophene) monomers in presence of iron(III) p-toluenesulfonate with different co-solvents in order to tune the film structure. While the Seebeck coefficient remained constant, a large improvement in the electrical conductivity was observed for thin films processed with high boiling point additives. The increase of electrical conductivity was found to be solely in-plane mobility-driven. Probing the thin film structure by Grazing Incidence Wide Angle X-ray Scattering has shown that this behavior is dictated by the structural properties of the PEDOT:Tos films; specifically by the thin film crystallinity combined to the preferential edge-on orientation of the PEDOT crystallites. Consequentially enhancement of the power factor from 25 to 78.5 μW/mK2 has been readily obtained for PEDOT:Tos thin films following this methodology. PMID:27470637

  3. Thermoelectric properties of Mg2Si-based compounds synthesized partially using magnesium alloy

    NASA Astrophysics Data System (ADS)

    Itoh, Takashi; Hagio, Kento

    2012-06-01

    Mg2Si compounds are promising eco-friendly thermoelectric materials because both constituent elements of Mg and Si have no toxicity and exist richly in earth crust. We have a plan to use the compounds in the applications that convert waste heat in the temperature range (600-900 K) into electric power. However, the thermoelectric performance of the compounds has not yet reached to the practical use level. In addition, the compounds don't have durability in the thermoelectric performance under atmospheric circumstances in the temperature range of 750-900 K. These issues have to be solved for the practical use. In our previous work, we obtained knowledge that Al doping in Mg2Si lower the electrical resistivity and improved the thermoelectric performance. We newly attempted to use a magnesium alloy (AZ61) that includes the main three elements of aluminum (5.8-7.2 wt%), zinc (0.4-1.5 wt%) and manganese (0.15-0.35 wt%) in order to synthesize the Mg2Si-based compounds. The Mg2Si-based compound powders were synthesized from the mixture of silicon powder, AZ61 chips and Mg powder by the liquid-solid phase reaction method. The compound powders were sintered by the pulse discharge sintering method. The influence of mixing ratio of two metals of AZ61 and pure Mg on the thermoelectric properties was investigated. Addition of AZ61 greatly decreased the electrical resistivity as well as Al-doped Mg2Si and the thermoelectric performance had improved most in the 50wt%AZ61 sample.

  4. Composition, microstructures, and magnetic properties of Bi-modified NiCuZn-ferrite for low temperature Co-fired ceramic application

    NASA Astrophysics Data System (ADS)

    Zhang, Suna; Jia, Lijun; Zhang, Huaiwu; Li, Jie; Zhou, Tingchuan; Liu, Baoyuan

    2014-05-01

    The effects of Ni2+ and Bi3+ substitution on the microstructural development and magnetic properties of low-temperature-fired NiCuZn ferrites with nominal compositions of NixCu0.21 Zn0.79-xBiyFe2-yO4 (x = 0.1-0.5, y = 0-0.05) were investigated in order to develop low-temperature-cofired ferrite technology and to produce high-frequency devices with a multilayer process. For the Bi-modified NiCuZn ferrites, increasing x decreased the average grain size due to lattice contraction; meanwhile, the saturation flux density first increased and then decreased. We attributed this behavior to the change of superexchange between A-B sites and B-B sites in the spinel structure. We found that Bi3+ ions could enter into the ferrite lattice, which enhanced the grain growth and densification during sintering due to the activation of the lattice. A study of the solid-state reaction kinetics of Bi-modified NiCuZn ferrites revealed that Bi3+ modification decreased the early activation temperature and the ferrite formation temperature; thus, Bi3+ modification could reduce the activation energy of the solid-state reaction. The Bi-substituted samples with x = 0.35 and y = 0.02 had compact, uniform microstructures, and high sintering densities, leading to relatively high values of permeability and Q-factor.

  5. Impact of low temperature annealing on structural, optical, electrical and morphological properties of ZnO thin films grown by RF sputtering for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Purohit, Anuradha; Chander, S.; Sharma, Anshu; Nehra, S. P.; Dhaka, M. S.

    2015-11-01

    This paper presents effect of low temperature annealing on the physical properties of ZnO thin films for photovoltaic applications. The thin films of thickness 50 nm were grown on glass and indium tin oxide (ITO) coated glass substrates employing radio frequency magnetron sputtering technique followed by thermal annealing within low temperature range 150-450 °C. These as-grown and annealed films were subjected to the X-ray diffraction (XRD), UV-Vis spectrophotometer, source meter and scanning electron microscopy (SEM) for structural, optical, electrical and surface morphological analysis respectively. The compositional analysis of the as-grown ZnO film was also carried out using energy dispersive spectroscopy (EDS). The XRD patterns reveal that the films have wurtzite structure of hexagonal phase with preferred orientation (1 0 0) and polycrystalline in nature. The crystallographic and optical parameters are calculated and discussed in detail. The optical band gap was found in the range 3.30-3.52 eV and observed to decrease with annealing temperature except 150 °C. The current-voltage characteristics show that the films exhibit approximately ohmic behavior. The SEM studies show that the films are uniform, homogeneous and free from crystal defects and voids. The experimental results reveal that ZnO thin films may be used as alternative materials for eco-friendly buffer layer to the thin film solar cell applications.

  6. Low-temperature properties of the S =1/2 spin system Yb3Ru4Al12 with a distorted kagome lattice structure

    NASA Astrophysics Data System (ADS)

    Nakamura, S.; Toyoshima, S.; Kabeya, N.; Katoh, K.; Nojima, T.; Ochiai, A.

    2015-06-01

    We have synthesized single crystals of ternary intermetallic Yb3Ru4Al12 with a distorted kagome lattice structure, and investigated the low-temperature resistivity, specific heat, magnetization, and magnetic phase transitions. Yb3Ru4Al12 is the first 4 f system that has a Gd3Ru4Al12 -type crystal structure where antiferromagnetic interaction acts on the spin. The crystal electric field (CEF) ground state of this compound is determined as a well isolated twofold degenerate state that is subjected to a strong easy-plane-type magnetic anisotropy. In the present study, the spin system of Yb3Ru4Al12 is regarded as an AFM X Y model of S =1 /2 . This compound undergoes successive magnetic phase transitions at 1.5 and 1.6 K, and the resistivity exhibits T2 behavior below 1 K. The ratio of the coefficient of the T2 term in the resistivity A , and that of the electronic specific heat coefficient γ0, deviates from the Kadowaki-Woods (KW) law. The successive phase transitions and low-temperature properties of Yb3Ru4Al12 where geometrical frustration and heavy fermion behavior occur are discussed.

  7. Good Low-Temperature Properties of Nitrogen-Enriched Porous Carbon as Sulfur Hosts for High-Performance Li-S Batteries.

    PubMed

    Zhu, Shaoyin; Wang, Yanqing; Jiang, Jicheng; Yan, Xiao; Sun, Deye; Jin, Yongcheng; Nan, Cewen; Munakata, Hirokazu; Kanamura, Kiyoshi

    2016-07-13

    Despite the increased attention devoted to exploring cathode construction based on various nitrogen-enriched carbon scaffolds at room temperature, the low-temperature behaviors of Li-S cathodes have yet to be studied. Herein, we demonstrate the good low-temperature electrochemical performances of nitrogen-enriched carbon/sulfur composite cathodes. Electrochemical evaluation indicates that a reversible capacity of 368 mAh g(-1) (0.5 C) over 100 cycles is achieved at -20 °C. After returning to 25 °C, a capacity of 620 mAh g(-1) (0.5 C) is achieved over 350 cycles with a low-capacity attenuation rate (0.071% per cycle) and an initial capacity of 1151 mAh g(-1) (0.1C). This positive electrochemical property was speculated to result from the good surface chemistry of the various amine groups in the nitrogen-enriched carbon materials with enhanced polysulfide immobilization. PMID:27320408

  8. Diameter dependent thermoelectric properties of individual SnTe nanowires

    SciTech Connect

    Xu, E. Z.; Li, Z.; Martinez, J. A.; Sinitsyn, N.; Htoon, H.; Li, Nan; Swartzentruber, B.; Hollingsworth, J. A.; Wang, Jian; Zhang, S. X.

    2015-01-15

    The lead-free compound tin telluride (SnTe) has recently been suggested to be a potentially promising thermoelectric material because of its similar electronic band structure as the well-known lead telluride. Here we report on the first thermoelectric study of individual single crystalline SnTe nanowires (NWs) with different diameters ranging from ~200 to ~1000 nm. Measurements of thermopower S, electrical conductivity σ, and thermal conductivity κ were carried out on the same nanowires over a temperature range of 25 - 300 K. While σ does not show a strong diameter dependence, the thermopower increases by a factor of 2 when the nanowire diameter is decreased from 1000 nm to 200 nm. The thermal conductivities of the measured NWs are only about half of that of the bulk SnTe, which may arise from the enhanced phonon-grain boundary and phonon-defect scatterings. Temperature dependent figure-of-merit ZT was determined and the maximum value at room temperature is ~3 times higher than what was obtained in bulk samples of comparable carrier density.

  9. Diameter dependent thermoelectric properties of individual SnTe nanowires

    DOE PAGES

    Xu, E. Z.; Li, Z.; Martinez, J. A.; Sinitsyn, N.; Htoon, H.; Li, Nan; Swartzentruber, B.; Hollingsworth, J. A.; Wang, Jian; Zhang, S. X.

    2015-01-15

    The lead-free compound tin telluride (SnTe) has recently been suggested to be a potentially promising thermoelectric material because of its similar electronic band structure as the well-known lead telluride. Here we report on the first thermoelectric study of individual single crystalline SnTe nanowires (NWs) with different diameters ranging from ~200 to ~1000 nm. Measurements of thermopower S, electrical conductivity σ, and thermal conductivity κ were carried out on the same nanowires over a temperature range of 25 - 300 K. While σ does not show a strong diameter dependence, the thermopower increases by a factor of 2 when the nanowiremore » diameter is decreased from 1000 nm to 200 nm. The thermal conductivities of the measured NWs are only about half of that of the bulk SnTe, which may arise from the enhanced phonon-grain boundary and phonon-defect scatterings. Temperature dependent figure-of-merit ZT was determined and the maximum value at room temperature is ~3 times higher than what was obtained in bulk samples of comparable carrier density.« less

  10. Simultaneous Thermoelectric Property Measurement and Incoherent Phonon Transport in Holey Silicon.

    PubMed

    Lim, Jongwoo; Wang, Hung-Ta; Tang, Jinyao; Andrews, Sean C; So, Hongyun; Lee, Jaeho; Lee, Dong Hyun; Russell, Thomas P; Yang, Peidong

    2016-01-26

    Block copolymer patterned holey silicon (HS) was successfully integrated into a microdevice for simultaneous measurements of Seebeck coefficient, electrical conductivity, and thermal conductivity of the same HS microribbon. These fully integrated HS microdevices provided excellent platforms for the systematic investigation of thermoelectric transport properties tailored by the dimensions of the periodic hole array, that is, neck and pitch size, and the doping concentrations. Specifically, thermoelectric transport properties of HS with a neck size in the range of 16-34 nm and a fixed pitch size of 60 nm were characterized, and a clear neck size dependency was shown in the doping range of 3.1 × 10(18) to 6.5 × 10(19) cm(-3). At 300 K, thermal conductivity as low as 1.8 ± 0.2 W/mK was found in HS with a neck size of 16 nm, while optimized zT values were shown in HS with a neck size of 24 nm. The controllable effects of holey array dimensions and doping concentrations on HS thermoelectric performance could aid in improving the understanding of the phonon scattering process in a holey structure and also in facilitating the development of silicon-based thermoelectric devices.

  11. Effects of Sn Substitution on Thermoelectric Properties of Ge4SbTe5

    NASA Astrophysics Data System (ADS)

    Williams, Jared B.; Mather, Spencer; Morelli, Donald T.

    2016-02-01

    Phase-change materials are identified by their ability to rapidly alternate between amorphous and crystalline phases upon heating, exhibiting large contrast in the optical/electrical properties of the respective phases. Such materials are primarily used in memory storage applications, but recently they have also been identified as potential thermoelectric materials. Many of the phase-change materials studied today can be found on the pseudobinary (GeTe)1- x (Sb2Te3) x tie-line. Ge4SbTe5, a single-phase compound just off of the (GeTe)1- x (Sb2Te3) x tie-line, forms in a metastable rocksalt crystal structure at room temperature. It has been found that stoichiometric and undoped Ge4SbTe5 exhibits thermal conductivity of ~1.2 W/m-K at high temperature and a dramatic decrease in electrical resistivity at 623 K due to a structural phase transition, which leads to a large enhancement in both thermoelectric power factor and thermoelectric figure of merit at 823 K. Introducing point defects via isoelectronic substitutions can be an effective means of reducing thermal conductivity and enhancing thermoelectric performance. We present a study of the effects of Sn substitution for Ge on the electrical and thermal transport properties of Ge4SbTe5.

  12. Thermoelectric Properties and Thermal Stability of BiCuSeO

    NASA Astrophysics Data System (ADS)

    Sato, Toshiharu; Kohri, Hitoshi; Yagasaki, Takayoshi

    2016-07-01

    Although BiCuSeO has become of interest as a high performance thermoelectric material, it has been reported to be unstable in air above 548 K. However, the details of the thermal degradation of BiCuSeO have not yet been determined. In this study, the time dependence of the thermoelectric properties of BiCuSeO at 550 K was assessed along with the accompanying thermal degradation behavior. Variations in ρ and α over time at 550 K were determined using the direct current four-terminal method and small temperature difference method, respectively. In addition, the crystalline phases of the specimen after thermoelectric measurements were identified by x-ray diffraction (XRD) analysis, and the surface chemical states were analyzed by x-ray photoelectron spectroscopy (XPS). The results of thermoelectric property measurements over time showed that ρ abruptly increased between 135 min and 182 min then decreased from 182 min to 210 min, while the value of α exhibited the opposite trend. XPS and XRD data suggested that BiCuSeO was pyrolyzed upon heating at 550 K for 6 h in air. In contrast, thermogravimetric analysis demonstrated that BiCuSeO was stable below 800 K under inert gas flow, thus the pyrolysis observed at 550 K was the result of reaction with atmospheric oxygen.

  13. Influence of Sedimentation of Atoms on Structural and Thermoelectric Properties of Bi-Sb Alloys

    NASA Astrophysics Data System (ADS)

    Januszko, Kamila; Stabrawa, Artur; Ogata, Yudai; Tokuda, Makoto; Khandaker, Jahirur Islam; Wojciechowski, Krzysztof; Mashimo, Tsutomu

    2016-03-01

    Functionally graded thermoelectric materials (FGTMs) have been prepared by sedimentation of atoms under a strong gravitational field. Starting samples of Bi x Sb1- x alloys with different composition x were synthesized by melting of metals and subsequent annealing of quenched samples. The thermoelectric properties (Seebeck coefficient, electrical conductivity) of the starting materials were characterized over the temperature range from 300 K to 525 K. Strong gravity experiments were performed in a unique ultracentrifuge apparatus under acceleration of over 0.5 × 106 G at temperatures of 538 K and 623 K. Changes of the microstructure and chemical composition were analyzed using scanning electron microscopy with energy-dispersive x-ray spectroscopy analysis. The distribution of the Seebeck coefficient of the Bi-Sb alloys was characterized by scanning thermoelectric microprobe. As a result of sedimentation, large changes in chemical composition ( x = 0.45 to 1) were obtained. It was found that the changes in chemical composition were correlated with alterations of the Seebeck coefficient. The obtained experimental data allowed the development of a semiempirical model for the selection of optimal processing parameters for preparation of Bi-Sb alloys with required thermoelectric properties.

  14. Thermoelectric Properties of n-type SnSe Single Crystal

    NASA Astrophysics Data System (ADS)

    Nguyen, Phuong; Duong, Anh Tuan; Rhim, S. H.; Nguyen, Van Quang; Duong, Van Thiet; Shin, Yooleemi; Cho, Sunglae; Kwon, Suyong; Song, Jae Yong; Park, Hyun Min

    Although thermoelectric materials are well known for their reliability and have been used for many years, even in the field of space engineering, their performance is quite small due to low energy conversion efficiency. Dimensionless figure of merit, ZT = S2. σ.T.κ-1 (where S, σ, T, κ are Seebeck coefficient, electrical conductivity, absolute temperature and thermal conductivity, respectively) is conveniently used to evaluate the conversion efficiency of a thermoelectric materials. Recently, the highest value of ZT to date has been reported for single crystal SnSe, ZT = 2.6 along the b axis of unit cell at 923 K. This temperature is rather high and the range of temperature for high reported ZT is quite narrow. Here we report an attempt to modify the thermoelectric properties of SnSe by using group V and VII as n-type dopant. A negative value of Seebeck coefficient was observed and the power factor reached a peak of 10 μW.K-2.cm-1 at around 600 K. The maximum n-type ZT was 0.57 at 650 K. We will discuss on dopant dependent thermoelectric properties of n-type SnSe single crystals.

  15. Thermoelectric Properties and Thermal Stability of BiCuSeO

    NASA Astrophysics Data System (ADS)

    Sato, Toshiharu; Kohri, Hitoshi; Yagasaki, Takayoshi

    2016-11-01

    Although BiCuSeO has become of interest as a high performance thermoelectric material, it has been reported to be unstable in air above 548 K. However, the details of the thermal degradation of BiCuSeO have not yet been determined. In this study, the time dependence of the thermoelectric properties of BiCuSeO at 550 K was assessed along with the accompanying thermal degradation behavior. Variations in ρ and α over time at 550 K were determined using the direct current four-terminal method and small temperature difference method, respectively. In addition, the crystalline phases of the specimen after thermoelectric measurements were identified by x-ray diffraction (XRD) analysis, and the surface chemical states were analyzed by x-ray photoelectron spectroscopy (XPS). The results of thermoelectric property measurements over time showed that ρ abruptly increased between 135 min and 182 min then decreased from 182 min to 210 min, while the value of α exhibited the opposite trend. XPS and XRD data suggested that BiCuSeO was pyrolyzed upon heating at 550 K for 6 h in air. In contrast, thermogravimetric analysis demonstrated that BiCuSeO was stable below 800 K under inert gas flow, thus the pyrolysis observed at 550 K was the result of reaction with atmospheric oxygen.

  16. Low temperature synthesis of diamond-based nano-carbon composite materials with high electron field emission properties

    SciTech Connect

    Saravanan, A.; Huang, B. R.; Yeh, C. J.; Leou, K. C.; Lin, I. N.

    2015-06-08

    A diamond-based nano-carbon composite (d/NCC) material, which contains needle-like diamond grains encased with the nano-graphite layers, was synthesized at low substrate temperature via a bias enhanced growth process using CH{sub 4}/N{sub 2} plasma. Such a unique granular structure renders the d/NCC material very conductive (σ = 714.8 S/cm), along with superior electron field emission (EFE) properties (E{sub 0} = 4.06 V/μm and J{sub e} = 3.18 mA/cm{sup 2}) and long lifetime (τ = 842 min at 2.41 mA/cm{sup 2}). Moreover, the electrical conductivity and EFE behavior of d/NCC material can be tuned in a wide range that is especially useful for different kind of applications.

  17. Low temperature synthesis of diamond-based nano-carbon composite materials with high electron field emission properties

    NASA Astrophysics Data System (ADS)

    Saravanan, A.; Huang, B. R.; Yeh, C. J.; Leou, K. C.; Lin, I. N.

    2015-06-01

    A diamond-based nano-carbon composite (d/NCC) material, which contains needle-like diamond grains encased with the nano-graphite layers, was synthesized at low substrate temperature via a bias enhanced growth process using CH4/N2 plasma. Such a unique granular structure renders the d/NCC material very conductive (σ = 714.8 S/cm), along with superior electron field emission (EFE) properties (E0 = 4.06 V/μm and Je = 3.18 mA/cm2) and long lifetime (τ = 842 min at 2.41 mA/cm2). Moreover, the electrical conductivity and EFE behavior of d/NCC material can be tuned in a wide range that is especially useful for different kind of applications.

  18. Effect of Al3+ ion addition on the magnetic properties of cobalt ferrite at moderate and low temperatures

    NASA Astrophysics Data System (ADS)

    Zaki, H. M.; Al-Heniti, Saleh. H.; Hashhash, A.

    2016-03-01

    The magnetic properties of aluminum-substituted cobalt ferrite, with the chemical formula CoAlxFe2-xO4, were investigated and synthesized using co-precipitation method. A coherent correlation between the saturation magnetization and aluminum concentration was observed. An increase in aluminum content lead to a decrease of coercivity (HC) retentivity (MR) and saturation magnetization (MS). According to the growth in the sub spectral areas obtained by Mössbauer spectroscopy, it was estimated that the agreeable ferric ions belong essentially to the site B, where the Mössbauer portion of site A does not vary appreciably. The dependence of Mössbauer parameters on hyperfine magnetic field, isomer shift and quadruple splitting on aluminum ions content were discussed.

  19. Low-Temperature Sintering and Electromagnetic Properties of NiCuZn/CaTiO3 Composites

    NASA Astrophysics Data System (ADS)

    Yang, Haibo; Yang, Yanyan; Lin, Ying; Zhu, Jianfeng; Wang, Fen

    2012-04-01

    Dense CaTiO3/Ni0.37Cu0.20Zn0.43Fe1.92O3.88 (CTO/NiCuZn) composites were prepared by the conventional solid-state reaction method and sintered at 950°C. The phase compositions and surface morphologies of the composites were investigated using x-ray diffraction and scanning electron microscopy, respectively. The dielectric and magnetic properties of the composites were also investigated. The results show that the CTO/NiCuZn composites possess high dielectric constants and permeabilities, which can be used in high-frequency communications for capacitor-inductor integrating devices such as electromagnetic interference filters and antennas. With increasing NiCuZn concentration, the permeabilities of the CTO/NiCuZn composites increase, while the dielectric constants and cutoff frequencies decrease.

  20. Monte Carlo Simulations on the Thermoelectric Transport Properties of Width-Modulated Nanowires

    NASA Astrophysics Data System (ADS)

    Zianni, X.

    2016-03-01

    We performed Monte Carlo simulations on the electron and phonon transport properties of Si nanowires with constant widths and of nanowires modulated by a constriction. We discuss and compare the transport properties and the thermoelectric efficiency in the nanowires. An overall figure of merit ( ZT) enhancement is predicted compared to the corresponding non-modulated nanowires. The ZT enhancement in thick, modulated nanowires has been found comparable to that in thin, non-modulated nanowires.

  1. Thermoelectric and mechanical properties of multi-wall carbon nanotube doped Bi0.4Sb1.6Te3 thermoelectric material

    SciTech Connect

    Ren, Fei; Wang, Hsin; Menchhofer, Paul A; Kiggans, Jim

    2013-01-01

    Since many thermoelectrics are brittle in nature with low mechanical strength, improving their mechanical properties is important in fabrication of devices such as thermoelectric power generators and coolers. In this work, multiwall carbon nanotubes (CNTs) were incorporated into polycrystalline Bi0.4Sb1.6Te3 through powder processing, which increased the flexural strength from 32 MPa to 90 MPa. Electrical and thermal conductivities were both reduced in the CNT containing materials, leading to unchanged figure of merit. Dynamic Young s modulus and shear modulus of the composites were lower than the base material, which is likely related to the grain boundary scattering due to the CNTs.

  2. Thermoelectric and mechanical properties of multi-walled carbon nanotube doped Bi0.4Sb1.6Te3 thermoelectric material

    NASA Astrophysics Data System (ADS)

    Ren, Fei; Wang, Hsin; Menchhofer, Paul A.; Kiggans, James O.

    2013-11-01

    Since many thermoelectrics are brittle in nature with low mechanical strength, improving their mechanical properties is important to fabricate devices such as thermoelectric power generators and coolers. In this work, multiwalled carbon nanotubes (CNTs) were incorporated into polycrystalline Bi0.4Sb1.6Te3 through powder processing, which increased the flexural strength from 32 MPa to 90 MPa. Electrical and thermal conductivities were both reduced in the CNT containing materials, leading to unchanged figure of merit. Dynamic Young's and shear moduli of the composites were lower than the base material, while the Poisson's ratio was not affected by CNT doping.

  3. Magnetic properties of ferromagnetic quasi-1D copper-peptide compounds: exchange interactions and very low temperature phase transitions.

    PubMed

    Chagas, Edson F; Rapp, Raul E; Rodrigues, Daniel E; Casado, Nieves M C; Calvo, Rafael

    2006-04-20

    The magnetic properties of the Cu(II)-peptide compounds (L-tyrosyl-L-leucinato)Cu(II) and (L-tryptophyl-glycinato)Cu(II), to be identified as Cu(II)Tyr-Leu and Cu(II)Trp-Gly, respectively, have been investigated by specific heat (0.08 < T < 28 K), dc magnetization (2 < T < 80 K, with B(0) = mu(o)H < or = 9 T), and ac magnetic susceptibility (with B(0) = 0 for 0.03 < T < 3 K and B(0) up to 9 T for 2 < T < 80 K) measurements. Above approximately 1 K, the specific heat and magnetization of both compounds display a ferromagnetic (FM) spin chain behavior sustained by syn-anti carboxylate bridges connecting equatorially Cu(II) ions at about 5 A. To model this behavior, we calculated the eigenvalues of Heisenberg chains with up to 20 spins 1/2 and used the method of Bonner and Fisher. A global fit of the model to the specific heat and magnetization data gives 2J(0)/k(B) = 3.60(5) K and 2.59(5) K for the intrachain exchange interactions in Cu(II)Tyr-Leu and Cu(II)Trp-Gly, respectively (H(ex)(i,j) = -2J(0) S(i).S(j)). These values of 2J(0) are discussed in terms of structural properties of the carboxylate bridges in the two compounds. Using the parameters obtained from the global fit, we calculated isothermal susceptibilities in agreement with the ac susceptibilities measured with small applied dc magnetic fields. However, the ac susceptibility measured with applied dc fields larger than 1 T lie between the values calculated for the isothermal and adiabatic susceptibilities. At 0.16 K for Cu(II)Tyr-Leu and 0.53 K for Cu(II)Trp-Gly, the observed specific heat and magnetic susceptibility display peaks associated to three-dimensional magnetic phase transitions. The interchain exchange couplings 2J(1) producing the 3D magnetic order are ferromagnetic and have magnitudes 2J(1)/k(B) approximately 0.015 and 0.073 K for Cu(II)Tyr-Leu and Cu(II)Trp-Gly, respectively. PMID:16610907

  4. Low-temperature anomalies in the magnetic and thermal properties of molecular cryocrystals doped with oxygen impurity

    NASA Astrophysics Data System (ADS)

    Freiman, Yu. A.; Tretyak, S. M.; JeŻowski, A.

    2000-09-01

    The magnetic properties of oxygen pair clusters are investigated theoretically for different cluster geometries which can be realized by doping molecular cryomatrices with oxygen. Anomalous temperature and pressure behavior of the magnetic susceptibility, heat capacity, and entropy is predicted. It is proposed to use these anomalies for studying the parameters characterizing the oxygen clusters and the parameters of the host matrix: the effective spin-figure interaction constant D for the molecule in the matrix, the exchange parameter J, and the number of pair clusters Np, which can deviate markedly from the purely random value Np=6Nc2 (N is Avogadro's number, and c is the molar concentration of the impurity). The data on the magnetic susceptibility may be used to analyze the character of the positional and orientational short-range order in the solid solution. The value of D contains information about the orientational order parameter; the distance and angular dependence of the exchange interaction parameter are still subject to discussion in the literature. The temperature dependence of Np contains information about diffusion and clusterization processes in the system.

  5. Low-temperature-dependent property in an avalanche photodiode based on GaN/AlN periodically-stacked structure

    PubMed Central

    Zheng, Jiyuan; Wang, Lai; Yang, Di; Yu, Jiadong; Meng, Xiao; Hao, Zhibiao; Sun, Changzheng; Xiong, Bing; Luo, Yi; Han, Yanjun; Wang, Jian; Li, Hongtao; Li, Mo; Li, Qian

    2016-01-01

    In ultra-high sensitive APDs, a vibrate of temperature might bring a fatal decline of the multiplication performance. Conventional method to realize a temperature-stable APD focuses on the optimization of device structure, which has limited effects. While in this paper, a solution by reducing the carrier scattering rate based on an GaN/AlN periodically-stacked structure (PSS) APD is brought out to improve temperature stability essentially. Transport property is systematically investigated. Compared with conventional GaN homojunction (HJ) APDs, electron suffers much less phonon scatterings before it achieves ionization threshold energy and more electrons occupy high energy states in PSS APD. The temperature dependence of ionization coefficient and energy distribution is greatly reduced. As a result, temperature stability on gain is significantly improved when the ionization happens with high efficiency. The change of gain for GaN (10 nm)/AlN (10 nm) PSS APD from 300 K to 310 K is about 20% lower than that for HJ APD. Additionally, thicker period length is found favorable to ionization coefficient ratio but a bit harmful to temperature stability, while increasing the proportion of AlN at each period in a specific range is found favorable to both ionization coefficient ratio and temperature stability. PMID:27775088

  6. Electromagnetic properties of microwave sintered ferromagnetic-ferroelectric composites for application in low temperature co-fired ceramic devices

    NASA Astrophysics Data System (ADS)

    Qinghui, Yang; Huaiwu, Zhang; Qiye, Wen; Yingli, Liu

    2011-04-01

    In this paper, microwave sintering (MS) technology has been applied in the preparation of ferromagnetic-ferroelectric composites. Several kinds of (Ni0.3Zn0.6Cu0.1)Fe2O4 (NiCuZn) ferrite with different contents of BaTiO3(BT) have been fabricated by MS technology. We found that the sintering time and temperature were significantly reduced from 22 h and 1100 °C for the conventional sintering (CS) process to 2 h and 840 °C for MS process, respectively. Experiments show that MS treated NiCuZn-BT composites possess both excellent ferromagnetic and ferroelectric properties. For the composites of NiCuZn added with 15% BaTiO3, the real part of permittivity is larger than 50 below 20 MHz and the real part of dielectric constant is larger than 18 below 1 GHz. Our results indicate that the microwave sintering method is a potential important technique in LTCC technology.

  7. Electromagnetic properties of microwave sintered ferromagnetic-ferroelectric composites for application in low temperature co-fired ceramic devices

    SciTech Connect

    Yang Qinghui; Zhang Huaiwu; Wen Qiye; Liu Yingli

    2011-04-01

    In this paper, microwave sintering (MS) technology has been applied in the preparation of ferromagnetic-ferroelectric composites. Several kinds of (Ni{sub 0.3}Zn{sub 0.6}Cu{sub 0.1})Fe{sub 2}O{sub 4} (NiCuZn) ferrite with different contents of BaTiO{sub 3}(BT) have been fabricated by MS technology. We found that the sintering time and temperature were significantly reduced from 22 h and 1100 deg. C for the conventional sintering (CS) process to 2 h and 840 deg. C for MS process, respectively. Experiments show that MS treated NiCuZn-BT composites possess both excellent ferromagnetic and ferroelectric properties. For the composites of NiCuZn added with 15% BaTiO{sub 3}, the real part of permittivity is larger than 50 below 20 MHz and the real part of dielectric constant is larger than 18 below 1 GHz. Our results indicate that the microwave sintering method is a potential important technique in LTCC technology.

  8. Improvement in micro-structural and mechanical properties of zinc film by surface treatment with low temperature argon plasma

    NASA Astrophysics Data System (ADS)

    Behera, Debadhyan; Mishra, Dilip K.; Pradhan, Siddhartha K.; Sakthivel, Ramasamy; Mohanty, Swagatika

    2011-11-01

    Nanocrystalline zinc films were deposited on gold coated borosilicate glass substrates by thermal evaporation method using zinc powders as the source material and then treated with argon plasma at various temperatures. From X-ray diffraction study, the as-deposited films are found to be metallic Zn and polycrystalline in nature. The crystalline nature improves with the increase of temperature up to 200 °C and decreases with the further increase of temperature to 300 °C. The binding energy observed for Zn 2p3/2, and the binding energy separation between Zn 2p3/2 and Zn 2p1/2 in the X-ray photoelectron spectrum indicate that the films are metallic zinc films. Transmission electron microscopic study shows hexagonal shaped grains having size ∼58 nm upon treatment with Ar plasma. It is clearly shown the grain growth and distinct grain boundary with the increase in temperature. The average Young's modulus (E) and hardness (H) are measured to be 84 GPa and 4.0 GPa for as-deposited film, whereas 98 GPa and 5.8 GPa for plasma treated film at 200 °C. The enhancement in mechanical properties is attributed to improvement in crystalline nature of the film and better interlinking between grains and boundaries.

  9. Low Temperature Magnetic Properties of the Late Archean Boolgeeda Iron Formation (Hamersley Group, Western Australia): Environmental Implications

    NASA Astrophysics Data System (ADS)

    Carlut, Julie; Isambert, Aude; Bouquerel, Hélène; Pecoits, Ernesto; Philippot, Pascal; Vennin, Emmanuelle; Ader, Magali; Thomazo, Christophe; Buoncristiani, Jean-François; Baton, Franck; Muller, Elodie; Deldicque, Damien

    2015-05-01

    The origin of the iron oxides in Archean and Paleoproterozoic Banded Iron Formations is still a debated question. We report low and high temperature magnetic properties, susceptibility and saturation magnetization results joined with scanning microscope observations within a 35 meters section of the Late Archean Boolgeeda Iron Formation of the Hamersley Group, Western Australia. With the exception of two volcanoclastic intervals characterized by low susceptibility and magnetization, nearly pure magnetite is identified as the main magnetic carrier in all iron-rich layers including hematite-rich jasper beds. Two populations of magnetically distinct magnetites are reported from a 2 meter-thick interval within the section. Each population shows a specific Verwey transition temperature: one around 120-124 K and the other in the range of 105-110 K. This temperature difference is interpreted to reflect two distinct stoichiometry and likely two episodes of crystallization. The 120-124K transition is attributed to nearly pure stoichiometric magnetite, SEM and microprobe observations suggest that the lower temperature transition is related to chemically impure silician magnetite. Microbial-induced partial substitution of iron by silicon is suggested here. This is supported by an increase in Total Organic Carbon (TOC) in the same interval.

  10. La 1−x Ca x MnO3 semiconducting nanostructures: morphology and thermoelectric properties

    PubMed Central

    2014-01-01

    Semiconducting metallic oxides, especially perosvkite materials, are great candidates for thermoelectric applications due to several advantages over traditionally metallic alloys such as low production costs and high chemical stability at high temperatures. Nanostructuration can be the key to develop highly efficient thermoelectric materials. In this work, La 1−x Ca x MnO3 perosvkite nanostructures with Ca as a dopant have been synthesized by the hydrothermal method to be used in thermoelectric applications at room temperature. Several heat treatments have been made in all samples, leading to a change in their morphology and thermoelectric properties. The best thermoelectric efficiency has been obtained for a Ca content of x=0.5. The electrical conductivity and Seebeck coefficient are strongly related to the calcium content. PMID:25206315

  11. A synthetic approach for enhanced thermoelectric properties of PEDOT:PSS bulk composites

    NASA Astrophysics Data System (ADS)

    Wei, Kaya; Stedman, Troy; Ge, Zhen-Hua; Woods, Lilia M.; Nolas, George S.

    2015-10-01

    The thermoelectric properties of PEDOT:PSS/Bi0.5Sb1.5Te3 polymer/inorganic bulk composites with different Bi0.5Sb1.5Te3 content were investigated. The composites were prepared at various concentrations of Bi0.5Sb1.5Te3 by a solution-phase process before grinding to fine powders in liquid N2 for hot pressing into bulk polymer composite materials. The measured transport properties are well described within a theoretical model for effective media involving a tunneling mechanism induced by thermal voltage fluctuations. Our results present a strategy for the preparation of bulk polymer composites and demonstrate an avenue for optimization of the thermoelectric properties of PEDOT:PSS/Bi0.5Sb1.5Te3 bulk composites.

  12. Effect of stress ratio on high-cycle fatigue properties of Ti-6Al-4V ELI alloy forging at low temperature

    NASA Astrophysics Data System (ADS)

    Ono, Yoshinori; Yuri, Tetsumi; Ogata, Toshio; Matsuoka, Saburo; Sunakawa, Hideo

    2014-01-01

    The effect of the stress ratio R (the ratio of minimum stress to maximum stress) on the high-cycle fatigue properties of Ti-6Al-4V extra-low interstitial (ELI) alloy forging was investigated at 293 and 77 K. At 293 K, the fatigue strength at 107 cycles exhibited deviations below the modified Goodman line in the R=0.01 and 0.5 tests. Moreover, at 77 K, larger deviations of the fatigue strength at 107 cycles below the modified Goodman line were confirmed in the same stress ratio conditions. The high-cycle fatigue strength of the present alloy forging exhibit an anomalous mean stress dependency at both temperatures and this dependency becomes remarkable at low temperature.

  13. Electrical Properties of Thickness-Vibration-Mode Multilayer Piezoelectric Transformer using Low-Temperature-Sintering-Modified PbTiO3 Ceramics

    NASA Astrophysics Data System (ADS)

    Yoo, Juhyun; Kim, Dohyung; Yoo, Kyungjin; Oh, Hyungsuk; Lee, Ilha; Lee, Sangho; Hwang, Larkhoon; Jeong, Yeongho

    2007-10-01

    In this study, a low temperature sintering thickness-vibration-mode multilayer piezoelectric transformer for a DC-DC converter was manufactured using (Pb0.76Ca0.23Sr0.01)Ti0.96(Mn1/3Sb2/3)0.04O3 ceramics. Its electrical properties were investigated according to the variations in frequency and load resistance. The voltage step-up ratio of the multilayer piezoelectric transformer showed a maximum value at a resonant frequency of 1.444 MHz and increased with an increase in load resistance. The efficiency of the multilayer piezoelectric transformer showed the highest value at a load resistance of 17 Ω. The output power increased with increasing input voltage. When the output impedance of the multilayer piezoelectric transformer coincided with the load resistance, output power showed the highest value of 18 W within a 20 °C temperature increase.

  14. Coagulation behavior and floc properties of compound bioflocculant-polyaluminum chloride dual-coagulants and polymeric aluminum in low temperature surface water treatment.

    PubMed

    Huang, Xin; Sun, Shenglei; Gao, Baoyu; Yue, Qinyan; Wang, Yan; Li, Qian

    2015-04-01

    This study was intended to compare coagulation behavior and floc properties of two dual-coagulants polyaluminum chloride-compound bioflocculant (PAC-CBF) (PAC dose first) and compound bioflocculant-polyaluminum chloride (CBF-PAC) (CBF dose first) with those of PAC alone in low temperature drinking water treatment. Results showed that dual-coagulants could improve DOC removal efficiency from 30% up to 34%. Moreover, CBF contributed to the increase of floc size and growth rate, especially those of PAC-CBF were almost twice bigger than those of PAC. However, dual-coagulants formed looser and weaker flocs with lower breakage factors in which fractal dimension of PAC-CBF flocs was low which indicates a looser floc structure. The floc recovery ability was in the following order: PAC-CBF>PAC alone>CBF-PAC. The flocculation mechanism of PAC was charge neutralization and enmeshment, meanwhile the negatively charged CBF added absorption and bridging effect.

  15. Thermoelectric properties of Ni-doped BaSi2

    NASA Astrophysics Data System (ADS)

    Xu, Yidong; Wu, Yixuan; Chen, Zhiwei; Shen, Wenjia; Jian, Zhengzhong; Lin, Siqi; Li, Juan; Li, Wen; Pei, Yanzhong

    2016-01-01

    BaSi2 has been known as a wide gap semiconductor with an intrinsic low lattice thermal conductivity, therefore may be a promising environmental friendly thermoelectric (TE) material with abundant constituent elements. In this work, NixBa1-xSi2 compounds with 0≤x≤0.3 are synthesized by arc melting. The resistivity, thermal conductivity and Seebeck coefficient are measured in the temperature range of 300-850K. The resistivity of the undoped BaSi2 is as high as 480mOhmṡcm at room temperature. Through Ni-doping, both resistivity and the Seebeck coefficient decrease dramatically. Meanwhile, the total thermal conductivity has no apparent difference due to Ni-doping. The lattice thermal conductivity decreases with increasing temperature monotonously to be lower than 1W/mṡK at high temperatures.

  16. Low temperature materials

    NASA Astrophysics Data System (ADS)

    Ballingall, J. M.; Ho, P.; Mazurowski, J.; Lester, L.; Hwang, K. C.

    1994-03-01

    In(x)Ga(l-x)As (x=025-0.35) grown at low temperature on GaAs by molecular beam epitaxy is characterized by Hall effect, transmission electron microscopy, and ultrafast optical testing. As with low temperature (LT) GaAs, the resistivity is generally higher after a brief anneal at 600 C. High-resolution transmission electron micrography shows all the as-grown epilayers grown directly on GaAs to be heavily dislocated due to the large lattice mismatch (2-3%). Annealed layers also show precipitate formation, in addition to the dislocations. Like LT GaAs, In(x)Ga(1-x)As lifetimes shorten as growth temperatures are reduced; and LT In(x)Ga(l-x)As lifetimes are generally shorter in as-grown samples than in annealed samples. The metal-semiconductor-metal photodetectors we fabricated on the material exhibit response times of 1-3 picoseconds, comparable to results reported on GaAs grown at low temperature, and the fastest ever reported in the wavelength range of 1.0-1.3 microns. To improve the crystalline quality and to distinguish detector speed and responsivity limitations due to dislocations versus defects induced by LT growth, we have grown 3 microns-thick graded layers of In(x)Al(l-x)As between the GaAs substrates and In(0.35)Ga(0.65)As films. The In(x)Al(l-x)As layers are heavily dislocated, with the dislocation density increasing with distance from the GaAs substrate, and abruptly terminating at or below the In(0.35)Ga(0.65)As layer.

  17. The role of plasma chemistry on functional silicon nitride film properties deposited at low-temperature by mixing two frequency powers using PECVD.

    PubMed

    Sahu, B B; Yin, Y Y; Tsutsumi, T; Hori, M; Han, Jeon G

    2016-05-14

    Control of the plasma densities and energies of the principal plasma species is crucial to induce modification of the plasma reactivity, chemistry, and film properties. This work presents a systematic and integrated approach to the low-temperature deposition of hydrogenated amorphous silicon nitride films looking into optimization and control of the plasma processes. Radiofrequency (RF) and ultrahigh frequency (UHF) power are combined to enhance significantly the nitrogen plasma and atomic-radical density to enforce their effect on film properties. This study presents an extensive investigation of the influence of combining radiofrequency (RF) and ultrahigh frequency (UHF) power as a power ratio (PR = RF : UHF), ranging from 4 : 0 to 0 : 4, on the compositional, structural, and optical properties of the synthesized films. The data reveal that DF power with a characteristic bi-Maxwellian electron energy distribution function (EEDF) is effectively useful for enhancing the ionization and dissociation of neutrals, which in turn helps in enabling high rate deposition with better film properties than that of SF operations. Utilizing DF PECVD, a wide-bandgap of ∼3.5 eV with strong photoluminescence features can be achieved only by using a high-density plasma and high nitrogen atom density at room temperature. The present work also proposes the suitability of the DF PECVD approach for industrial applications. PMID:27109293

  18. Defect induced structural and thermoelectric properties of Sb{sub 2}Te{sub 3} alloy

    SciTech Connect

    Das, Diptasikha; Malik, K.; Deb, A. K.; Dhara, Sandip; Bandyopadhyay, S.; Banerjee, Aritra

    2015-07-28

    Structural and thermoelectric properties of metallic and semiconducting Sb{sub 2}Te{sub 3} are reported. X-Ray diffraction and Raman spectroscopy studies reveal that semiconducting sample has higher defect density. Nature and origin of possible defects are highlighted. Semiconducting Sb{sub 2}Te{sub 3} hosts larger numbers of defects, which act as scattering center and give rise to the increased value of resistivity, thermopower, and power factor. Thermopower data indicate p-type nature of the synthesized samples. It is evidenced that the surface states are often mixed with the bulk state, giving rise to metallicity in Sb{sub 2}Te{sub 3}. Role of different scattering mechanism on the thermoelectric property of Sb{sub 2}Te{sub 3} is discussed.

  19. Anisotropic Thermoelectric Properties of MnSiγ Film Prepared on R-Sapphire

    NASA Astrophysics Data System (ADS)

    Takeda, Komei; Kikuchi, Yuta; Hayashi, Kei; Miyazaki, Yuzuru; Kajitani, Tsuyoshi

    2012-05-01

    We attempted to obtain an epitaxial MnSiγ (γ˜1.7) film on R-sapphire, i.e., Sapphire(1102), substrate by pulsed laser deposition. We prepared MnSiγ films by changing the substrate temperature gradient. It was found that the MnSiγ film, whose temperature gradient in a substrate is parallel to Sapphire[1120], could be grown epitaxially on the substrate. The epitaxial relationship was MnSiγ(1000)[0010] ∥ Sapphire(1102)[1120]. The thermoelectric properties of the epitaxial MnSiγ film were different in the a- and c-axes, reflecting the anisotropic MnSiγ crystal structure. The anisotropic thermoelectric properties are discussed in terms of the electronic structure.

  20. High-temperature thermoelectric properties of Hg-doped CuInTe{sub 2}

    SciTech Connect

    Kucek, V. Drasar, C.; Kasparova, J.; Plechacek, T.; Benes, L.; Navratil, J.; Vlcek, M.

    2015-09-28

    Polycrystalline samples of composition CuIn{sub 1−x}Hg{sub x}Te{sub 2} (x = 0–0.21) were synthesized from elements of 5N purity using a solid state reaction. The phase purity of the products was verified by X-ray diffraction. Samples for transport property measurements were prepared using hot-pressing. The samples were characterized by measurement of the electrical conductivity, Hall coefficient, Seebeck coefficient, and thermal conductivity over a temperature range of 300–675 K. All samples show p-type conductivity. We discuss the influence of Hg substitution on the free carrier concentration and thermoelectric performance. The investigation of the thermoelectric properties shows up to a 40% improvement of ZT in the temperature range of 300–600 K.

  1. Thermoelectric properties of zigzag silicene nanoribbons doped with Co impurity atoms

    NASA Astrophysics Data System (ADS)

    Zberecki, K.; Swirkowicz, R.; Barnaś, J.

    2015-11-01

    Thermoelectric properties of silicene nanoribbons doped with Co adatoms located in the edge positions are investigated theoretically by ab initio numerical methods based on the density functional theory. The adatoms are shown to considerably influence the corresponding electronic band structure, which results in two different magnetic states of the nanoribbons - ferrimagnetic with semiconducting transport properties and ferromagnetic of metallic character. In the former state magnetic moments at the two edges are antiparallel, while in the latter case they are parallel. Numerical calculations show that a significant spin thermopower can occur in the ferrimagnetic state due to a non-zero band-gap, while in the ferromagnetic state both conventional and spin thermopowers are rather moderate. Thus, the ferrimagnetic state arising due to the presence of impurities at the edge positions appears to be the most appropriate from the point of view of spin thermoelectric phenomena.

  2. Transport Properties of Bulk Thermoelectrics An International Round-Robin Study, Part I: Seebeck Coefficient and Electrical Resistivity

    SciTech Connect

    Wang, Hsin; Porter, Wallace D; Bottner, Harold; Konig, Jan; Chen, Lidong; Bai, Shengqiang; Tritt, Terry M.; Mayolett, Alex; Senawiratne, Jayantha; Smith, Charlene; Harris, Fred; Gilbert, Partricia; Sharp, Jeff; Lo, Jason; Keinke, Holger; Kiss, Laszlo I.

    2013-01-01

    Recent research and development of high temperature thermoelectric materials has demonstrated great potential of converting automobile exhaust heat directly into electricity. Thermoelectrics based on classic bismuth telluride have also started to impact the automotive industry by enhancing air conditioning efficiency and integrated cabin climate control. In addition to engineering challenges of making reliable and efficient devices to withstand thermal and mechanical cycling, the remaining issues in thermoelectric power generation and refrigeration are mostly materials related. The figure-of-merit, ZT, still needs to improve from the current value of 1.0 - 1.5 to above 2 to be competitive to other alternative technologies. In the meantime, the thermoelectric community could greatly benefit from the development of international test standards, improved test methods and better characterization tools. Internationally, thermoelectrics have been recognized by many countries as an important area for improving energy efficiency. The International Energy Agency (IEA) group under the implementing agreement for Advanced Materials for Transportation (AMT) identified thermoelectric materials as an important area in 2009. This paper is Part I of the international round-robin testing of transport properties of bulk thermoelectrics. The main focuses in Part I are on two electronic transport properties: Seebeck coefficient and electrical resistivity.

  3. Electronic properties of GeTe and Ag- or Sb-substituted GeTe studied by low-temperature Te125 NMR

    DOE PAGES

    Cui, J.; Levin, E. M.; Lee, Y.; Furukawa, Y.

    2016-08-18

    We have carried out 125Te nuclear magnetic resonance (NMR) in a wide temperature range of 1.5–300 K to investigate the electronic properties of Ge50 Te50, Ag2 Ge48Te50 , and Sb2 Ge48 Te50 from a microscopic point of view. From the temperature dependence of the NMR shift (K) and nuclear spin lattice relaxation rate (1/T1), we found that two bands contribute to the physical properties of the materials. One band overlaps the Fermi level providing the metallic state where no strong electron correlations are revealed by Korringa analysis. The other band is separated from the Fermi level by an energy gapmore » of Eg/kB ~67 K, which gives rise to semiconductorlike properties. First-principles calculation reveals that the metallic band originates from the Ge vacancy while the semiconductorlike band is related to the fine structure of the density of states near the Fermi level. We find low-temperature Te125 NMR data for the materials studied here clearly show that Ag substitution increases hole concentration while Sb substitution decreases it.« less

  4. Electronic properties of GeTe and Ag- or Sb-substituted GeTe studied by low-temperature 125Te NMR

    NASA Astrophysics Data System (ADS)

    Cui, J.; Levin, E. M.; Lee, Y.; Furukawa, Y.

    2016-08-01

    We have carried out 125Te nuclear magnetic resonance (NMR) in a wide temperature range of 1.5-300 K to investigate the electronic properties of Ge50Te50 ,Ag2Ge48Te50 , and Sb2Ge48Te50 from a microscopic point of view. From the temperature dependence of the NMR shift (K ) and nuclear spin lattice relaxation rate (1 /T1 ), we found that two bands contribute to the physical properties of the materials. One band overlaps the Fermi level providing the metallic state where no strong electron correlations are revealed by Korringa analysis. The other band is separated from the Fermi level by an energy gap of Eg/kB˜67 K, which gives rise to semiconductorlike properties. First-principles calculation reveals that the metallic band originates from the Ge vacancy while the semiconductorlike band is related to the fine structure of the density of states near the Fermi level. Low-temperature 125Te NMR data for the materials studied here clearly show that Ag substitution increases hole concentration while Sb substitution decreases it.

  5. Thermoelectric and Magnetic Properties of Pt-Substituted {BaFe_{4-{x}}Pt_{{x}}Sb_{12}} Compounds

    NASA Astrophysics Data System (ADS)

    Sertkol, Murat; Ballıkaya, Sedat; Aydoğdu, Fatih; Güler, Adil; Özdemir, Mustafa; Öner, Yıldırhan

    2016-08-01

    {BaFe_{4-{x}}Pt_{{x}}Sb_{12}} (x = 0, 0.1, 0.2) compounds were prepared by melting and annealing, followed by a spark plasma sintering method. Low-temperature thermoelectric and magnetic properties were investigated based on Seebeck coefficient, electrical and thermal conductivity and magnetization measurements. The structural properties of {BaFe_{4-{x}}Pt_{{x}}Sb_{12}} (x = 0, 0.1, 0.2) compounds were ascertained by powder x-ray diffraction analysis, confirming that all samples have a main phase of a skutterudite structure with the space group Im{bar{3}} . The lattice parameters obtained, 9.202(5), 9.199(5) and 9.202(1) Å for x = 0, 0.1 and 0.2, respectively, were found consistent with literature. The Seebeck coefficient sign shows that holes are dominant carriers in all compounds. The local maximum Seebeck coefficient was observed around 50 K which may be a trace of paramagnon-drag effect of charge carriers. Thermal conductivity and electrical resistivity measurements were carried out between 4.2 and 300 K. Temperature dependence of electrical resistivity reflects that all samples show semi-metallic behavior in our temperature range of 4.2-300 K. Samples for x = 0.1 and x = 0.2 show Kondo-like behavior. In magnetization measurement, we observe that there are two successive magnetic transitions in Pt-substituted compounds; however, there is only one (transition from a paramagnetic state to long-range magnetic ordering) in Pt-free compounds. In Pt-substituted compounds, the first transition appears at T _{ c} = 48 K. In addition, the second transition is observed at T _{ irr} = 30 K where an intermediate state is observed before the magnetic ordering transforms to an irreversible ferromagnetic state. We concluded that Pt substitution on the Fe side effectual on the thermoelectric and magnetic properties of {BaFe_{4-{x}}Pt_{{x}}Sb_{12}} (x = 0, 0.1, 0.2) compounds.

  6. Thermoelectric properties of a two-dimensional electron gas exhibiting the quantum Hall effect

    SciTech Connect

    Davidson, J.S.; Dahlberg, E.D.; Valois, A.J.; Robinson, G.Y.

    1986-02-15

    This Communication reports studies of the thermoelectric properties of a two-dimensional electron gas in the quantum Hall regime. The data are compared to theoretical predictions for the thermopower when the chemical potential lies either in the middle of a Landau level or midway between two levels. For the comparison a Gaussian broadening is assumed and a good fit to the data can be obtained with the width of the levels as the adjustable parameter.

  7. Low Temperature Sheet Forming

    NASA Astrophysics Data System (ADS)

    Voges-Schwieger, Kathrin; Hübner, Sven; Behrens, Bernd-Arno

    2011-05-01

    Metastable austenitic stainless steels change their lattice during forming operations by strain-induced alpha'-martensite formation. Temperatures below T = 20° C can accelerate the phase transformation while temperatures above T = 60° C may suppress the formation of martensite during the forming operation. In past investigations, the effect of high-strength martensitic regions in an austenitic ductile lattice was used in crash relevant parts for transportation vehicles. The local martensitic regions act as reinforcements leading to an increase in crash energy absorption. Moreover, they control the folding behavior as well as the force-distance-characteristic and increase the buckling resistance. This paper deals with a concerted thermomechanical drawing process to increase the local formation of alpha'-martensite caused by low temperatures.

  8. Low temperature latching solenoid

    NASA Technical Reports Server (NTRS)

    Wang, W. S. (Inventor)

    1981-01-01

    A magnetically latching solenoid includes a pull-in coil and a delatching coil. Each of the coils is constructed with a combination of wire materials, including material of low temperature coefficient of resistivity to enable the solenoid to be operated at cryogenic temperatures while maintaining sufficient coil resistance. An armature is spring-based toward a first position, that may extend beyond the field of force of a permanent magnet. When voltage is temporarily applied across the pull-in magnet, the induced electromagnetic forces overcome the spring force and pulls the armature to a second position within the field of the permanent magnet, which latches the armature in the pulled-in position. Application of voltage across the delatching coil induces electromagnetic force which at least partially temporarily nullifies the field of the permanent magnet at the armature, thereby delatching the armature and allowing the spring to move the armature to the first position.

  9. Preparation and Thermoelectric Properties of Pb1-x Fe x Te Alloys Doped with Iodine

    NASA Astrophysics Data System (ADS)

    Cao, X. L.; Cai, W.; Deng, H. D.; Gao, R. L.; Fu, C. L.; Pan, F. S.

    2016-09-01

    This is the first systematic report on the preparation and thermoelectric properties of n-type Pb1-x Fe x Te alloys. Iodine-doped n-type Pb0.85Fe0.15Te polycrystalline was prepared by melting and hot-pressing techniques. The morphology and phase structure of the prepared materials were analyzed by scanning electron microscopy and x-ray diffraction, which indicated that the samples possessed a rock-salt crystal structure and showed a biphase structure. The major phase was the polycrystalline PbTe compound and the second phase was the FeTe compound. The FeTe nano-/micro-precipitates were homogeneously distributed in the PbTe matrix, which is beneficial for the reduction of the lattice thermal conductivity. The effects of the iodine content on the thermoelectric properties of I-doped Pb0.85Fe0.15Te have been investigated. The measurement results of electrical resistivity, carrier concentration, Seebeck coefficient, and thermal conductivity in the temperature range of 300-850 K indicate that the thermoelectric transport properties of the obtained samples are sensitive to the iodine content. When the concentration of iodine is about 0.6 at.%, the maximum dimensionless figure-of-merit value of ˜0.65 at 800 K was obtained.

  10. Study on the thermoelectric properties of PVDF/MWCNT and PVDF/GNP composite foam

    NASA Astrophysics Data System (ADS)

    Sun, Yu-Chen; Terakita, Daryl; Tseng, Alex C.; Naguib, Hani E.

    2015-08-01

    Thermoelectric effect is defined as the revisable translation between thermal and electrical energy. In this paper, we investigate the properties of p-type poly(vinylidene fluoride) (PVDF) based polymer composite foams that can be used in next generation energy harvesting applications. The composites were created using the continuous melt blending method. Multi-walled carbon nanotubes (MWCNTs) and graphene nano-platelets (GNPs) were used as secondary phases to strengthen the electrical conductivity of the composites. Foam structures were later generated using the super-critical carbon dioxide saturation method. We study the material properties between solid and foam samples; the results indicate a dramatic increase in overall thermoelectric properties for GNP foamed samples. We also report at least an order decrease in thermal conductivity, which is in favor of the thermoelectric effect. An unexpected drop in electrical conductivity was observed after the foaming process and can be explained by the large volumetric expansion of the foam. Finally, we report the Seebeck coefficient for both types of composite foams: 11 μV/K for 5 wt% MWCNT/PVDF foam and 58 μV/K for 15 wt% GNP/PVDF foam.

  11. Thermoelectric properties of DC-sputtered filled skutterudite thin film

    SciTech Connect

    Fu, Gaosheng; Zuo, Lei; Chen, Jie; Lu, Ming; Yu, Liangyao

    2015-03-28

    The Yb filled CoSb{sub 3} skutterudite thermoelectric thin films were prepared by DC magnetron sputtering. The electrical conductivity, Seebeck coefficient, thermal conductivity, and figure of merit ZT of the samples are characterized in a temperature range of 300 K to 700 K. X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy are obtained to assess the phase composition and crystallinity of thin film samples at different heat treatment temperatures. Carrier concentrations and Hall mobilities are obtained from Hall Effect measurements, which provide further insight into the electrical conductivity and Seebeck coefficient mechanisms. The thermal conductivity of thin film filled skutterudite was found to be much less compared with bulk Yb filled CoSb{sub 3} skutterudite. In this work, the 1020 K heat treatment was adopted for thin film post process due to the high degree of crystallinity as well as avoiding reverse heating effect. Thin film samples of different thicknesses were prepared with the same sputtering deposition rate and maximum ZT of 0.48 was achieved at 700 K for the 130 nm thick sample. This value was between half and one third of the bulk figure of merit which was due to the lower Hall mobility.

  12. Towards High-Throughput, Simultaneous Characterization of Thermal and Thermoelectric Properties

    NASA Astrophysics Data System (ADS)

    Miers, Collier Stephen

    The extension of thermoelectric generators to more general markets requires that the devices be affordable and practical (low $/Watt) to implement. A key challenge in this pursuit is the quick and accurate characterization of thermoelectric materials, which will allow researchers to tune and modify the material properties quickly. The goal of this thesis is to design and fabricate a high-throughput characterization system for the simultaneous characterization of thermal, electrical, and thermoelectric properties for device scale material samples. The measurement methodology presented in this thesis combines a custom designed measurement system created specifically for high-throughput testing with a novel device structure that permits simultaneous characterization of the material properties. The measurement system is based upon the 3o method for thermal conductivity measurements, with the addition of electrodes and voltage probes to measure the electrical conductivity and Seebeck coefficient. A device designed and optimized to permit the rapid characterization of thermoelectric materials is also presented. This structure is optimized to ensure 1D heat transfer within the sample, thus permitting rapid data analysis and fitting using a MATLAB script. Verification of the thermal portion of the system is presented using fused silica and sapphire materials for benchmarking. The fused silica samples yielded a thermal conductivity of 1.21 W/(m K), while a thermal conductivity of 31.2 W/(m K) was measured for the sapphire samples. The device and measurement system designed and developed in this thesis provide insight and serve as a foundation for the development of high throughput, simultaneous measurement platforms.

  13. Structural disorder, magnetism, and electrical and thermoelectric properties of pyrochlore Nd2Ru2O7.

    PubMed

    Gaultois, Michael W; Barton, Phillip T; Birkel, Christina S; Misch, Lauren M; Rodriguez, Efrain E; Stucky, Galen D; Seshadri, Ram

    2013-05-01

    Polycrystalline Nd2Ru2O7 samples have been prepared and examined using a combination of structural, magnetic, and electrical and thermal transport studies. Analysis of synchrotron x-ray and neutron diffraction patterns suggests some site disorder on the A-site in the pyrochlore sublattice: Ru substitutes on the Nd-site up to 7.0(3)%, regardless of the different preparative conditions explored. Intrinsic magnetic and electrical transport properties have been measured. Ru 4d spins order antiferromagnetically at 143 K, as seen both in the susceptibility and in the specific heat, and there is a corresponding change in the electrical resistivity. The onset of a second antiferromagnetic ordering transition seen below 5 K is attributed to ordering of Nd 4f spins. Nd2Ru2O7 is an electrical insulator, and this behaviour is believed to be independent of the Ru-antisite disorder on the Nd-site. The electrical properties of Nd2Ru2O7 are presented in the light of data published on all A2Ru2O7 pyrochlores, and we emphasize the special structural role that Bi(3+) ions on the A-site play in driving metallic behaviour. High-temperature thermoelectric properties have also been measured. When considered in the context of known thermoelectric materials with useful figures-of-merit, it is clear that Nd2Ru2O7 has excessively high electrical resistivity which prevents it from being an effective thermoelectric. A method for screening candidate thermoelectrics is suggested.

  14. Enhanced Thermoelectric Properties of Cu2ZnSnSe4 with Ga-doping

    SciTech Connect

    Wei, Kaya; Beauchemin, Laura; Wang, Hsin; Porter, Wallace D.; Martin, Joshua; Nolas, George S.

    2015-08-10

    Gallium doped Cu2ZnSnSe4 quaternary chalcogenides with and without excess Cu were synthesized by elemental reaction and densified using hot pressing in order to investigate their high temperature thermoelectric properties. The resistivity, , and Seebeck coefficient, S, for these materials decrease with increased Ga-doping while both mobility and effective mass increase with Ga doping. The power factor (S2/ρ) therefore increases with Ga-doping. The highest thermoelectric figure of merit (ZT = 0.39 at 700 K) was obtained for the composition that had the lowest thermal conductivity. Our results suggest an approach to achieving optimized thermoelectric properties and are part of the continuing effort to explore different quaternary chalcogenide compositions and structure types, as this class of materials continues to be of interest for thermoelectrics applications.

  15. Thermoelectric properties of nickel and titanium co-intercalated titanium diselenide

    NASA Astrophysics Data System (ADS)

    Holgate, Timothy Charles

    Thermoelectric materials are involved in the direct conversion between thermal and electrical energy. They may be used to generate power from a thermal gradient or to pump heat in or out of a system when driven with DC power. Much of the recent advances in thermoelectric research have been in materials whose thermoelectric efficiency has been optimized at temperatures above room temperature where power generation is the main application. The question that I seek to answer in this dissertation is to use our standard experimental techniques in order to assess the possibility of a class of transition metal dichalcogenides bases on TiSe2 that are suitable candidates for thermoelectric applications. In addition, a further question is to understand the individual roles of intercalating titanium and nickel into the van der Waal planes of these materials and to investigate their effects on the electrical and thermal transport properties as well as the structure (including microstructure) of these materials. The work presented herein has focused on deriving a thermoelectric material with a maximum ZT in the temperature range between 100 K and room temperature. Some of the niche applications of thermoelectric cooling in this temperature range include high-speed computing, active cooling of detectors, and most importantly, in the region of 100 to 120 K, the viability of superconducting electronic systems without the need of liquefied gasses. Transition metal dichalcogenides are layered structures with a weakly bonded van der Waals gap between a-b planes. This gap may be intercalated by many different atomic and molecular species, which may significantly affect the structural and transport properties. Intercalation therefore provides a wide-ranging tuning "knob" for optimizing the thermal and electrical transport properties of the host material. Several compounds chosen from this group of materials were synthesized and intercalated with 3d and 4d transition metals. Thermal and

  16. Enhancement of Thermoelectric Properties of PEDOT:PSS and Tellurium-PEDOT:PSS Hybrid Composites by Simple Chemical Treatment

    NASA Astrophysics Data System (ADS)

    Jin Bae, Eun; Hun Kang, Young; Jang, Kwang-Suk; Yun Cho, Song

    2016-01-01

    The thermoelectric properties of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and tellurium-PEDOT:PSS (Te-PEDOT:PSS) hybrid composites were enhanced via simple chemical treatment. The performance of thermoelectric materials is determined by their electrical conductivity, thermal conductivity, and Seebeck coefficient. Significant enhancement of the electrical conductivity of PEDOT:PSS and Te-PEDOT:PSS hybrid composites from 787.99 and 11.01 to 4839.92 and 334.68 S cm-1, respectively was achieved by simple chemical treatment with H2SO4. The power factor of the developed materials could be effectively tuned over a very wide range depending on the concentration of the H2SO4 solution used in the chemical treatment. The power factors of the developed thermoelectric materials were optimized to 51.85 and 284 μW m-1 K-2, respectively, which represent an increase of four orders of magnitude relative to the corresponding parameters of the untreated thermoelectric materials. Using the Te-PEDOT:PSS hybrid composites, a flexible thermoelectric generator that could be embedded in textiles was fabricated by a printing process. This thermoelectric array generates a thermoelectric voltage of 2 mV using human body heat.

  17. Enhancement of Thermoelectric Properties of PEDOT:PSS and Tellurium-PEDOT:PSS Hybrid Composites by Simple Chemical Treatment

    PubMed Central

    Jin Bae, Eun; Hun Kang, Young; Jang, Kwang-Suk; Yun Cho, Song

    2016-01-01

    The thermoelectric properties of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and tellurium-PEDOT:PSS (Te-PEDOT:PSS) hybrid composites were enhanced via simple chemical treatment. The performance of thermoelectric materials is determined by their electrical conductivity, thermal conductivity, and Seebeck coefficient. Significant enhancement of the electrical conductivity of PEDOT:PSS and Te-PEDOT:PSS hybrid composites from 787.99 and 11.01 to 4839.92 and 334.68 S cm−1, respectively was achieved by simple chemical treatment with H2SO4. The power factor of the developed materials could be effectively tuned over a very wide range depending on the concentration of the H2SO4 solution used in the chemical treatment. The power factors of the developed thermoelectric materials were optimized to 51.85 and 284 μW m−1 K−2, respectively, which represent an increase of four orders of magnitude relative to the corresponding parameters of the untreated thermoelectric materials. Using the Te-PEDOT:PSS hybrid composites, a flexible thermoelectric generator that could be embedded in textiles was fabricated by a printing process. This thermoelectric array generates a thermoelectric voltage of 2 mV using human body heat. PMID:26728992

  18. Influence of rare earth doping on thermoelectric properties of SrTiO{sub 3} ceramics

    SciTech Connect

    Liu, J. Wang, C. L.; Li, Y.; Su, W. B.; Zhu, Y. H.; Li, J. C.; Mei, L. M.

    2013-12-14

    Thermoelectric properties of SrTiO{sub 3} ceramics, doped with different rare earth elements, were investigated in this work. It's found that the ionic radius of doping elements plays an important role on thermoelectric properties: SrTiO{sub 3} ceramics doped with large rare earth ions (such as La, Nd, and Sm) exhibit large power factors, and those doped with small ions (such as Gd, Dy, Er, and Y) exhibit low thermal conductivities. Therefore, a simple approach for enhancing the thermoelectric performance of SrTiO{sub 3} ceramics is proposed: mainly doped with large ions to obtain a large power factor and, simultaneously, slightly co-doped with small ions to obtain a low thermal conductivity. Based on this rule, Sr{sub 0.8}La{sub 0.18}Yb{sub 0.02}TiO{sub 3} ceramics were prepared, whose ZT value at 1 023 K reaches 0.31, increasing by a factor of 19% compared with the single-doped counterpart Sr{sub 0.8}La{sub 0.2}TiO{sub 3} (ZT = 0.26)

  19. Effect of silicon and sodium on thermoelectric properties of thallium doped lead telluride based materials

    SciTech Connect

    Zhang, Qinyong; Wang, H; Zhang, Qian; Liu, W.; Yu, Bo; Wang, H; Wang, D.; Ni, G; Chen, Gang; Ren, Z. F.

    2012-01-01

    Thallium (Tl)-doped lead telluride (Tl0.02Pb0.98Te) thermoelectric materials fabricated by ball milling and hot pressing have decent thermoelectric properties but weak mechanical strength. Addition of silicon (Si) nanoparticles strengthened the mechanical property by reducing the grain size and defect density but resulted in low electrical conductivity that was not desired for any thermoelectric materials. Fortunately, doping of sodium (Na) into the Si added Tl0.02Pb0.98Te brings back the high electrical conductivity and yields higher figure-of-merit ZT values of ~1.7 at 770 K. The ZT improvement by Si addition and Na doping in Tl0.02Pb0.98Te sample is the direct result of concurrent electron and phonon engineering by improving the power factor and lowering the thermal conductivity, respectively.

  20. LDA +U calculation of electronic and thermoelectric properties of doped CuCoO 2

    NASA Astrophysics Data System (ADS)

    Knížek, K.

    2015-02-01

    Doped CuCoO2 is a candidate oxide material for thermoelectric power generation. The evolution of the band structure and thermoelectric properties of CuCoO2 upon hole and electron doping in the CoO2 layer and hole doping at the Cu site were calculated by the local-density approximation (LDA) and LDA +U methods and using standard Boltzmann theory. The doping was simulated by the virtual atom approximation and the supercell approach and the results were compared with previous calculations using the rigid band approximation. The calculated thermopowers are comparable for the virtual atom and rigid band approximations, but the thermopower obtained from the supercell calculation is significantly lower. The reason is the similar energy of Co and Cu d orbitals and the hybridization of symmetrically related Co a1 g and Cu dz2 orbitals. As a consequence, both cations contribute to the bands around the Fermi level and hence a substitution at any of the cation sites alters the band structure at EF and affects the thermoelectric properties. Our results show that in the case of hole doping, higher thermopower is obtained for substitution at the Cu site than in the CoO2 layer.

  1. Tuning of thermoelectric properties with changing Se content in Sb2Te3

    NASA Astrophysics Data System (ADS)

    Das, D.; Malik, K.; Deb, A. K.; Kulbachinskii, V. A.; Kytin, V. G.; Chatterjee, S.; Das, D.; Dhara, S.; Bandyopadhyay, S.; Banerjee, A.

    2016-02-01

    Polycrystalline Sb2Te3-x Se x (0.0≤ x≤1.0) samples were synthesized by the solid-state reaction method. The structural analysis showed that up to the maximal concentration of Se, the samples possess rhombohedral crystal symmetry (space group R\\bar{3}m ). The increase of Se content increases the resistivity of the samples. The variation of phonon frequencies, observed from the Raman spectroscopic study, depicts an anomalous behaviour around x=0.2 . The sample Sb2Te2.8Se0.2 also shows maximum Seebeck coefficient, carrier concentration and thermoelectric power factor. The nature of the scattering mechanism controlling the thermopower data has been explored. The thermoelectric properties of the synthesized materials have been analyzed theoretically in the frame of the Boltzmann equation approach.

  2. Calculated transport properties of CdO: Thermal conductivity and thermoelectric power factor

    NASA Astrophysics Data System (ADS)

    Lindsay, L.; Parker, D. S.

    2015-10-01

    We present first-principles calculations of the thermal and electronic transport properties of the oxide semiconductor CdO. In particular, we find from theory that the accepted thermal conductivity κ value of 0.7 W m-1K-1 is approximately one order of magnitude too small; our calculations of κ of CdO are in good agreement with recent measurements. We also find that alloying of MgO with CdO is an effective means to reduce the lattice contribution to κ , despite MgO having a much larger thermal conductivity. We further consider the electronic structure of CdO in relation to thermoelectric performance, finding that large thermoelectric power factors may occur if the material can be heavily doped p type. This work develops insight into the nature of thermal and electronic transport in an important oxide semiconductor.

  3. WSi2 in Si(1-x)Ge(x) Composites: Processing and Thermoelectric Properties

    NASA Technical Reports Server (NTRS)

    Mackey, Jonathan A.; Sehirlioglu, Alp; Dynys, Fred

    2015-01-01

    Traditional SiGe thermoelectrics have potential for enhanced figure of merit (ZT) via nano-structuring with a silicide phase, such as WSi2. A second phase of nano-sized silicides can theoretically reduce the lattice component of thermal conductivity without significantly reducing the electrical conductivity. However, experimentally achieving such improvements in line with the theory is complicated by factors such as control of silicide size during sintering, dopant segregation, matrix homogeneity, and sintering kinetics. Samples were prepared using powder metallurgy techniques; including mechano-chemical alloying, via ball milling, and spark plasma sintering for densification. Processing, micro-structural development, and thermoelectric properties will be discussed. Additionally, couple and device level characterization will be introduced.

  4. Improvement of thermoelectric properties for half-Heusler TiNiSn by interstitial Ni defects

    SciTech Connect

    Hazama, Hirofumi; Matsubara, Masato; Asahi, Ryoji; Takeuchi, Tsunehiro

    2011-09-15

    We have synthesized off-stoichiometric Ti-Ni-Sn half-Heusler thermoelectrics in order to investigate the relation between randomly distributed defects and thermoelectric properties. A small change in the composition of Ti-Ni-Sn causes a remarkable change in the thermal conductivity. An excess content of Ni realizes a low thermal conductivity of 2.93 W/mK at room temperature while keeping a high power factor. The low thermal conductivity originates in the defects generated by an excess content of Ni. To investigate the detailed defect structure, we have performed first-principles calculations and compared with x ray photoemission spectroscopy measurement. Based on these analyses, we conclude that the excess Ni atoms randomly occupy the vacant sites in the half-Heusler structure, which play as phonon scattering centers, resulting in significant improvement of the figure of merit without any substitutions of expensive heavy elements, such as Zr and Hf.

  5. Calculated transport properties of CdO: thermal conductivity and thermoelectric power factor

    DOE PAGES

    Lindsay, Lucas R.; Parker, David S.

    2015-10-01

    We present first principles calculations of the thermal and electronic transport properties of the oxide semiconductor CdO. In particular, we find from theory that the accepted thermal conductivity κ value of 0.7 Wm-1K-1 is approximately one order of magnitude too small; our calculations of κ of CdO are in good agreement with recent measurements. We also find that alloying of MgO with CdO is an effective means to reduce the lattice contribution to κ, despite MgO having a much larger thermal conductivity. We further consider the electronic structure of CdO in relation to thermoelectric performance, finding that large thermoelectric powermore » factors may occur if the material can be heavily doped p-type. This work develops insight into the nature of thermal and electronic transport in an important oxide semiconductor.« less

  6. Importance of non-parabolic band effects in the thermoelectric properties of semiconductors.

    PubMed

    Chen, Xin; Parker, David; Singh, David J

    2013-11-07

    We present an analysis of the thermoelectric properties of of n-type GeTe and SnTe in relation to the lead chalcogenides PbTe and PbSe. We find that the singly degenerate conduction bands of semiconducting GeTe and SnTe are highly non-ellipsoidal, even very close to the band edges. This leads to isoenergy surfaces with a strongly corrugated shape that is clearly evident at carrier concentrations well below 0.005 e per formula unit (7-9 × 10(19) cm(-3) depending on material). Analysis within Boltzmann theory suggests that this corrugation may be favorable for the thermoelectric transport. Our calculations also indicate that values of the power factor for these two materials may well exceed those of PbTe and PbSe. As a result these materials may exhibit n-type performance exceeding that of the lead chalcogenides.

  7. Thermoelectric properties of CuS/Ag2S nanocomposites synthesed by modified polyol method

    NASA Astrophysics Data System (ADS)

    Tarachand, Sharma, Vikash; Ganesan, V.; Okram, Gunadhor S.

    2016-05-01

    This is the report on successful synthesis of Ag doped CuS nanostructures by modified polyol method. The resulting samples were characterized by powder X-ray diffraction (XRD), energy dispersive X-ray (EDX), atomic force microscopy (AFM) and dynamic light scattering (DLS). Particle size of pure CuS nanoparticles (NPs) was 17 nm, 38 nm and 97 nm as determined from Scherrer formula, AFM and DLS, respectively. Introduction of Ag led to formation of CuS/Ag2S composites. A transition at 55 K in thermopower is ascribed to structural transformation from hexagonal to orthorhombic structure. Further, their thermoelectric properties exhibit remarkable change owing to Ag doping in CuS nanostructures. The power factor improves with increasing Ag content. They reveal that CuS/Ag2S nanocomposites are some of the potential candidates for generation of thermoelectricity in future.

  8. Calculated transport properties of CdO: thermal conductivity and thermoelectric power factor

    SciTech Connect

    Lindsay, Lucas R.; Parker, David S.

    2015-10-01

    We present first principles calculations of the thermal and electronic transport properties of the oxide semiconductor CdO. In particular, we find from theory that the accepted thermal conductivity κ value of 0.7 Wm-1K-1 is approximately one order of magnitude too small; our calculations of κ of CdO are in good agreement with recent measurements. We also find that alloying of MgO with CdO is an effective means to reduce the lattice contribution to κ, despite MgO having a much larger thermal conductivity. We further consider the electronic structure of CdO in relation to thermoelectric performance, finding that large thermoelectric power factors may occur if the material can be heavily doped p-type. This work develops insight into the nature of thermal and electronic transport in an important oxide semiconductor.

  9. Modeling the Thermoelectric Properties of Ti5O9 Magnéli Phase Ceramics

    NASA Astrophysics Data System (ADS)

    Pandey, Sudeep J.; Joshi, Giri; Wang, Shidong; Curtarolo, Stefano; Gaume, Romain M.

    2016-11-01

    Magnéli phase Ti5O9 ceramics with 200-nm grain-size were fabricated by hot-pressing nanopowders of titanium and anatase TiO2 at 1223 K. The thermoelectric properties of these ceramics were investigated from room temperature to 1076 K. We show that the experimental variation of the electrical conductivity with temperature follows a non-adiabatic small-polaron model with an activation energy of 64 meV. In this paper, we propose a modified Heikes-Chaikin-Beni model, based on a canonical ensemble of closely spaced titanium t 2g levels, to account for the temperature dependency of the Seebeck coefficient. Modeling of the thermal conductivity data reveals that the phonon contribution remains constant throughout the investigated temperature range. The thermoelectric figure-of-merit ZT of this nanoceramic material reaches 0.3 K at 1076 K.

  10. Modeling the Thermoelectric Properties of Ti5O9 Magnéli Phase Ceramics

    NASA Astrophysics Data System (ADS)

    Pandey, Sudeep J.; Joshi, Giri; Wang, Shidong; Curtarolo, Stefano; Gaume, Romain M.

    2016-07-01

    Magnéli phase Ti5O9 ceramics with 200-nm grain-size were fabricated by hot-pressing nanopowders of titanium and anatase TiO2 at 1223 K. The thermoelectric properties of these ceramics were investigated from room temperature to 1076 K. We show that the experimental variation of the electrical conductivity with temperature follows a non-adiabatic small-polaron model with an activation energy of 64 meV. In this paper, we propose a modified Heikes-Chaikin-Beni model, based on a canonical ensemble of closely spaced titanium t 2g levels, to account for the temperature dependency of the Seebeck coefficient. Modeling of the thermal conductivity data reveals that the phonon contribution remains constant throughout the investigated temperature range. The thermoelectric figure-of-merit ZT of this nanoceramic material reaches 0.3 K at 1076 K.

  11. Low Temperature Oxidation Catalyst

    NASA Technical Reports Server (NTRS)

    1995-01-01

    One day soon homeowners everywhere may be protected from deadly carbon monoxide fumes, thanks to a device invented at NASA Langley Research Center in Hampton, Va. It uses a new class of low-temperature oxidation catalysts to convert carbon monoxide to non-toxic carbon dioxide at room temperature. It can also remove formaldehyde from the air. The catalysts initially were developed for research involving carbon dioxide lasers. Industry already has shown an interest. Rochester Gas and Electric Co., of Rochester, N.Y., has an agreement with NASA Langley to develop a product for habitable spaces such as homes, cars and aircraft. The Mantic Corp., of Salt Lake City, Utah, plans to use them in breathing apparatus, such as firefighter masks. The catalysts also have applications as trace-gas detectors, and in cold-engine emission control. To work, the catalysts - tin oxide and platinum - are applied to a surface. Air passing over the surface reacts with the catalysts, transforming carbon monoxide and formaldehyde. The device requires no energy for operation, doesn't need to be plugged in, has no moving parts and lasts a long time.

  12. Thermoelectric transport properties of nanostructured FeSb 2 and Ce-based heavy-fermions CeCu and CeAl 3

    NASA Astrophysics Data System (ADS)

    Pokharel, Mani R.

    the thermal conductivities of nanostructured FeSb2 samples 7. We find a notably large value for Kapitza length at low temperatures indicating the dominance of inter-grain thermal resistance over bulk thermal resistance in determining the thermal properties of FeSb 2. 1Huaizhou Zhao, Mani Pokharel, Gaohua Zhu, Shuo Chen, Kevin Lukas, Qing Jie,Cyril Opeil, Gang Chen, and Zhifeng Ren, Appl. Phys. Lett. 99, 163101 (2011). 2Mani Pokharel, Tulashi Dahal, Zhifeng Ren, and Cyril Opeil, Journal of Alloys and Compounds 609 (2014) 228-232. 3Mani Pokharel, Tulashi Dahal, Zhensong Ren, Peter Czajka, Stephen Wilson, Zhifeng Ren, and Cyril Opeil, Energy Conversion and Management, 87 (2014) 584-588. 4Mani Pokharel, Machhindra Koirala, Huaizhau Zhao, Zhifeng Ren, and Cyril Opeil, J. Low Temp. Phys., 176 (2014) 122-130. 5Mani Pokharel, Huaizhou Zhao, Shuo Chen, Kevin Lukas, Hui Wang, Cyril Opeil1, Gang Chen, and Zhifeng Ren, Nanotechnology 23 (2012) 505402. 6Mani Pokharel, Huaizhou Zhao, Kevin Lukas, Bogdan Mihaila, Zhifeng Ren, and Cyril Opeil, MRS Communications 3 (2013) 31-36. 7Mani Pokharel, Huaizhau Zhao, Zhifeng Ren, and Cyril Opeil, International Journal of Thermal Science, 71 (2013) 32-35.

  13. Synthesis and characterization of Bi-Te-Se thermoelectric materials

    SciTech Connect

    Tripathi, S. K.; Kumari, Ankita; Ridhi, R.; Kaur, Jagdish

    2015-08-28

    Bismuth Telluride (Bi{sub 2}Te{sub 3}) and its related alloys act as a promising thermoelectric material and preferred over other thermoelectric materials due to their high stability and efficiency under ambient conditions. In the present work, we have reported economical, environment friendly and low-temperature aqueous chemical method for the synthesis of Bi-Se-Te alloy. The prepared samples are characterized by X-Ray Diffraction to investigate the structural properties and UV-Visible spectroscopy for the spectroscopic analysis. The absorption spectrum reveals the sensitivity in the ultraviolet as well as in visible region.

  14. Phase Transition and Microwave Dielectric Properties of Low-Temperature Sintered BiCu2VO6 Ceramic and its Chemical Compatibility with Silver

    NASA Astrophysics Data System (ADS)

    Li, Chunchun; Xiang, Huaicheng; Fang, Liang

    2016-01-01

    In this work, a low-firing microwave dielectric ceramic BiCu2VO6 with monoclinic structure was prepared through a solid state reaction method. Dense ceramic could be obtained when sintered at 740°C with a relative density about 96.7%. A diffusive phase transition was observed from the temperature dependence of the relative permittivity and loss tangent. The best sintered sample at 740°C exhibited the optimum microwave dielectric properties with a relative permittivity ~22.7, a quality factor ~11,960 GHz (at 11.0 GHz), and a temperature coefficient of resonant frequency of -17.2 ppm/°C. From the x-ray diffraction, backscattered electron imaging results of the cofired sample with 20 wt.% silver, the BiCu2VO6 ceramic was found not to react with Ag at 740°C. It might be promising for the low-temperature cofired ceramics and dielectric resonator applications.

  15. Relationship between meat toughness and properties of connective tissue from cows and young bulls heat treated at low temperatures for prolonged times.

    PubMed

    Christensen, Line; Ertbjerg, Per; Løje, Hanne; Risbo, Jens; van den Berg, Frans W J; Christensen, Mette

    2013-04-01

    The aim of the current study was to elucidate whether cows and young bulls require different combinations of heating temperature and heating time to reduce toughness of the meat. The combined effect of heating temperature and time on toughness of semitendinosus muscle from the two categories of beef was investigated and the relationship to properties of connective tissue was examined. Measurements of toughness, collagen solubility, cathepsin activity and protein denaturation of beef semitendinosus heated at temperatures between 53°C and 63°C for up to 19 1/2 h were conducted. The results revealed that slightly higher temperatures and prolonged heating times were required to reduce toughness of semitendinosus from cows to the same level as in young bulls. Reduced toughness of semitendinosus as a result of low temperature for prolonged time is suggested to result from weakening of the connective tissue, caused partly by denaturation or conformational changes of the proteins and/or by solubilization of collagen.

  16. High temperature thermoelectric properties of rock-salt structure PbS

    DOE PAGES

    Parker, David S.; Singh, David J.

    2013-12-18

    We present an analysis of the high temperature transport properties of rock-salt structure PbS, a sister compound to the better studied lead chalcogenides PbSe and PbTe. In this study, we find thermopower magnitudes exceeding 200 V/K in a wide doping range for temperatures of 800 K and above. Based on these calculations, and an analysis of recent experimental work we find that this material has a potential for high thermoelectric performance. Also, we find favorable mechanical properties, based on an analysis of published data.

  17. Thermoelectric Properties of the Quasi-Binary MnSi1.73-FeSi2 System

    NASA Astrophysics Data System (ADS)

    Sadia, Yatir; Madar, Naor; Kaler, Ilan; Gelbstein, Yaniv

    2015-06-01

    The higher manganese silicides (HMS) are regarded as very attractive p-type thermoelectric materials for direct conversion of heat to electricity. To compete with other thermodynamic engines (e.g. the Stirling and Rankine cycles), however, the thermoelectric figure of merit of such silicides must be improved. HMS follow a complicated solidification reaction on cooling from the melt, which leads to formation of undesired secondary phases. Furthermore, the electronic carrier concentration of HMS is much higher than the optimum for thermoelectric applications and should be compensated by introduction of doping agents. In this research, the electronic donor action associated with substitution of HMS by FeSi2 was investigated. The effects of excess Si on phase distribution and thermoelectric properties are also discussed in detail.

  18. Electronic structure of narrow gap semiconductors: Understanding gap formation and thermoelectric properties

    NASA Astrophysics Data System (ADS)

    Larson, Paul Melvin

    Electronic band structure calculations are invaluable theoretical tools to understand structural, transport, and optical properties of materials. We have used this tool in the search for new high performance thermoelectric materials, which are usually narrow-gap semiconductors. We have studied the electronic structures of these systems both to understand which properties of the band structure are most important for thermoelectric properties and the nature of the gap formation. Narrow-gap semiconductors lie between metals and wide-gap semiconductors, so understanding the nature of the gap formation is very important. The small band gaps in the systems we have studied generally arise from hybridization between different bands. We have used the local density approximation (LDA) and the generalized gradient approximation (GGA) within density functional theory (DFT). These have been implemented using the full-potential linearized augmented planewave (FLAPW) method within the WIEN97 package. This state-of-the-art method is among the most accurate methods for calculating the electronic structure of solids. We have studied four classes of compounds. These include the half-Heusler compounds, the ternary Zintl-phase compounds, the simple chalcogenides, and the complex chalcogenides. The ternary half-Heusler compounds, considered having a stuffed NaCl structure, show promising thermoelectric properties. The band gap formation is understood by starting with the semi-metallic binary NaCl compounds from which they are formed. Adding the transition (or noble) metal atom causes a strong p-d hybridization near the Fermi energy which opens up the band gap. This hybridization also leads to highly anisotropic effective masses at the conduction band minimum which are found in the best thermoelectric materials. Similar band gap formation is found in the ternary Zintl-phase compounds which are considered a stuffed Th3P4 structure. The band gaps in these ternary compounds are larger than

  19. Enhanced Thermoelectric Properties of La-Doped ZrNiSn Half-Heusler Compound

    NASA Astrophysics Data System (ADS)

    Akram, Rizwan; Zhang, Qiang; Yang, Dongwang; Zheng, Yun; Yan, Yonggao; Su, Xianli; Tang, Xinfeng

    2015-10-01

    The effect of La doping on ZrNiSn half-Heusler (HH) compound has been studied to explore the composition variation and structural modifications for improvement of its thermoelectric performance. A series of La x Zr1- x NiSn ( x = 0, 0.005, 0.01, 0.015, 0.02, 0.03) alloys were prepared by induction melting combined with plasma-activated sintering. Structural analysis using x-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) confirmed the resulting material to be a composite of HH, NiZr, and La3Sn4-type phases. The volume fraction for the phases other than HH ranged from 1.5% to 25% with increasing La content, as estimated by Rietveld analysis. The solubility of La in ZrNiSn is estimated to be 1.5%. Point defects may play a significant role in carrier and phonon transport. Interestingly, the thermoelectric transport properties exhibited a considerable increase in electrical conductivity σ with La doping and a significant drop in thermal conductivity κ, leading to a thermoelectric figure of merit ( ZT) of 0.53 at 923 K, representing an improvement of about 37% compared with the undoped sample.

  20. Thermoelectric transport properties of Ca3Co4- x Ni x O9+ δ oxide materials

    NASA Astrophysics Data System (ADS)

    Park, K.; Cha, J. S.; Nam, S. W.; Choi, S.-M.; Seo, W.-S.; Lee, S.; Lim, Y. S.

    2016-01-01

    Nano-sized Ca3Co4- x Ni x O9+ δ (0 ≤ x ≤ 0.3) thermoelectric powders are synthesized by using the solution combustion method, with aspartic acid as a combustion fuel. The synthesized Ca3Co4- x Ni x O9+ δ nano-sized powders exhibit a spherical-like shape and a smooth surface. Higher Ni content results in a smaller grain size and a higher porosity, resulting in a decrease in the electrical conductivity. However, the Seebeck coefficient of Ni-added Ca3Co4O9 is much higher than that of Ca3Co4O9. The highest power factor (1.4 × 10-4 Wm-1K-2), which is more than nine times larger than that of Ca3Co4O9, is attained for Ca3Co0.38Ni0.2O9+ δ at 800 °C. The addition of a small amount of Ni is highly effective in improving the thermoelectric properties of Ca3Co4O9. We believe that Ca3Co4- x Ni x O9+ δ is a potential p-type thermoelectric material for renewable energy conversion.

  1. Orientation dependency of mechanical properties of 1950`s vintage Type 304 stainless steel weldment components before and after low temperature neutron irradiation

    SciTech Connect

    Sindelar, R.L.; Caskey, G.R. Jr.

    1992-12-31

    Databases of mechanical properties for both the piping and reactor vessels at the Savannah River Site (SRS) were developed from weldment components (base, weld, and weld heat-affected-zone (HAZ)) of archival piping specimens in the unirradiated and irradiated conditions. Tensile, Charpy V-notch (CVN), and Compact Tension C(T) specimens were tested at 25 and 125C before and after irradiation at low temperatures (90 to 150C) to levels of 0.065 to 2.1 dpa. irradiation hardened the weldment components and reduced the absorbed energy and toughness properties from the unirradiated values. A marked difference in the Charpy V-notch absorbed energy and the elastic-plastic fracture toughness (J{sub IC}) was observed for both the base and HAZ components with the C-L orientation being lower in toughness than the L-C orientation in both the unirradiated and irradiated conditions. Fracture surface examination of the base and HAZ components of unirradiated C(T) specimens showed a ``channel`` morphology in the fracture surfaces of the C-L specimens, whereas equiaxed ductile rupture occurred in the L-C specimens. Chromium carbide precipitation in the HAZ component reduced the fracture toughness of the C-L and L-C specimens compared to the respective base component C-L and L-C specimens. Optical metallography of the piping materials showed stringers of second phase particles parallel to the rolling direction along with a banding or modulation in the microchemistry perpendicular to the pipe axis or rolling direction of the plate material.

  2. Orientation dependency of mechanical properties of 1950's vintage Type 304 stainless steel weldment components before and after low temperature neutron irradiation

    SciTech Connect

    Sindelar, R.L.; Caskey, G.R. Jr.

    1992-01-01

    Databases of mechanical properties for both the piping and reactor vessels at the Savannah River Site (SRS) were developed from weldment components (base, weld, and weld heat-affected-zone (HAZ)) of archival piping specimens in the unirradiated and irradiated conditions. Tensile, Charpy V-notch (CVN), and Compact Tension C(T) specimens were tested at 25 and 125C before and after irradiation at low temperatures (90 to 150C) to levels of 0.065 to 2.1 dpa. irradiation hardened the weldment components and reduced the absorbed energy and toughness properties from the unirradiated values. A marked difference in the Charpy V-notch absorbed energy and the elastic-plastic fracture toughness (J[sub IC]) was observed for both the base and HAZ components with the C-L orientation being lower in toughness than the L-C orientation in both the unirradiated and irradiated conditions. Fracture surface examination of the base and HAZ components of unirradiated C(T) specimens showed a channel'' morphology in the fracture surfaces of the C-L specimens, whereas equiaxed ductile rupture occurred in the L-C specimens. Chromium carbide precipitation in the HAZ component reduced the fracture toughness of the C-L and L-C specimens compared to the respective base component C-L and L-C specimens. Optical metallography of the piping materials showed stringers of second phase particles parallel to the rolling direction along with a banding or modulation in the microchemistry perpendicular to the pipe axis or rolling direction of the plate material.

  3. Thermoelectric transport in strongly correlated quantum dot nanocomposites

    NASA Astrophysics Data System (ADS)

    Zhou, Jun; Yang, Ronggui

    2010-08-01

    We investigate the thermoelectric transport properties (electrical conductivity, Seebeck coefficient, power factor, and thermoelectric figure of merit) in strongly correlated quantum dot nanocomposites at low temperature (77 K) by using the dynamical mean-field theory and the Kubo formula. The periodic Anderson model is applied to describe the strongly correlated quantum dot nanocomposites with tunable parameters such as the size of quantum dots and the electron occupation number. The electron occupation number can be controlled by the doping concentration in the both matrix and quantum dots, the size of quantum dots, and the interdot spacing. These parameters control the transition between n -type like behavior (with negative Seebeck coefficient) and p -type like behavior (with positive Seebeck coefficient) of strongly correlated quantum dot nanocomposites. Large Seebeck coefficient up to 260μV/K due to the asymmetry of the electron bands with sharp electron density of states can be obtained in the strongly correlated quantum dot nanocomposites, along with moderate electrical conductivity values in the order of 105/Ωm . This results in optimal power factor about 78μW/cmK2 and optimal figure of merit (ZT) over 0.55 which is much larger than the value of the state-of-the-art low-temperature thermoelectric materials. This study shows that high efficiency thermoelectric materials at low temperature can be obtained in strongly correlated quantum dot nanocomposites.

  4. Thermal Cycling Effects on the Thermoelectric Properties of n-Type In, Ce based Skutterudite Compounds

    SciTech Connect

    Biswas, Krishnendu; Subramanian, Mas A.; Good, Morris S.; Roberts, Kamandi C.; Hendricks, Terry J.

    2012-06-14

    N-type In-filled CoSb3 are known skutterudite compounds that have shown promising thermoelectric (TE) properties resulting in high dimensionless figure of merit values at elevated temperatures. Their use in various waste heat recovery applications will require that they survive and operate after exposure to harsh thermal cycling environments. This research focused on uncovering the thermal cycling effects on thermoelectric properties of n-type In0.2Co4Sb12 and In0.2Ce0.15Co4Sb12 skutterudite compositions as well as quantifying their temperature-dependent structural properties (elastic modulus, shear modulus, and Poisson's ratio). It was observed that the Seebeck coefficient and resistivity increased only slightly in the double-filled In,Ce skutterudite materials upon thermal cycling. In the In-filled skutterudites the Seebeck coefficient remained approximately the same on thermal cycling, while electrical resistivity increased significantly after thermal cycling. Results also show that thermal conductivity marginally decreases in the case of In-filled skutterudites, whereas the reduction is more pronounced in In, Ce-based skutterudite compounds. The possible reason for this kind of reduction can be attributed to grain pinning effects due to formation of nano inclusions. High temperature structural property measurements (i.e., Young's modulus and shear modulus) are also reported and the results show that these structural properties decrease slowly as temperature increases and the compounds are structurally stable after numerous thermal cycles.

  5. Synthesis, Structure, and Transport Properties of YbSb2Te4 and YbSb4Te7 for Thermoelectric Applications

    NASA Technical Reports Server (NTRS)

    Guloy, Amado S.

    2005-01-01

    Very little work has been done in the Yb-Sb-Te system of compounds. Exploratory synthesis of various compounds in the system has been performed in the search for new thermoelectric materials. The compounds in the system were examined due to the fact that the system is known to act as a concentrated Kondo system, a heavy fermion. Heavy fermions are known to possess high densities of state which are useful in thermoelectric applications. TWO compounds in the system, YbSb2Te4 and YbSb4Te7, have been successfully synthesized in bulk by two methods: low temperature mechanical alloying and high temperature direct synthesis. The Hall mobility, Seebeck coefficient, electrical resistivity, and thermal conductivity were measured on both the unannealed and annealed compounds up to 550 C to determine the dimensionless thermoelectric figure of merit, ZT. The results indicate that both compounds make promising candidates for use in thermoelectric devices.

  6. Inhomogeneous thermoelectric materials: improving overall zT by localized property variations

    NASA Astrophysics Data System (ADS)

    Prasad, Narasimha; Nemir, David; Beck, Jan; Maddux, Jay; Taylor, Patrick

    2015-05-01

    The search for improved thermoelectric materials is driven in part by the desire to convert otherwise wasted lowtemperature heat into useful electricity. In this work, we demonstrate a new path towards materials having higher overall zT, and consequently improved capacity to obtain more electrical power from a given content of heat. We produced alloys of (Bi,Sb)2Te3 using a special gas atomization process that is capable of producing source powder material having nanometer-scale grain size. When impulse-compacted by shockwave consolidation, the obtained dense solid will retain its nanostructure because insufficient time and temperature are available for the kinetics of any appreciable grain growth to proceed. However, if there is initial non-uniformity in the properties of the source powder, or if there is stress non-symmetries during shockwave consolidation, then the obtained consolidated material may have locally inhomogeneous properties distributed throughout the material. Thermoelectric property measurements from selected regions within the consolidated sample indicate a wide distribution of properties. For example, the thermal conductivity at room temperature ranged from as low as 1.30 Watts/m-K in one region to higher than 3.00 Watts/m-K in a neighboring region. The electrical resistivity showed similar variation from as low as 0.5 mΩ-cm to as high as 1.5 mΩ-cm. Individually, those regions exhibited thermoelectric material figure-of-merit, zT values ranging between 0.3 and 0.4. However, when combined into a dense nanocomposite, the overall ensemble zT approaches 0.7 which is nearly a factor of 2 higher.

  7. Proposal for a phase-coherent thermoelectric transistor

    SciTech Connect

    Giazotto, F.; Robinson, J. W. A.; Moodera, J. S.; Bergeret, F. S.

    2014-08-11

    Identifying materials and devices which offer efficient thermoelectric effects at low temperature is a major obstacle for the development of thermal management strategies for low-temperature electronic systems. Superconductors cannot offer a solution since their near perfect electron-hole symmetry leads to a negligible thermoelectric response; however, here we demonstrate theoretically a superconducting thermoelectric transistor which offers unparalleled figures of merit of up to ∼45 and Seebeck coefficients as large as a few mV/K at sub-Kelvin temperatures. The device is also phase-tunable meaning its thermoelectric response for power generation can be precisely controlled with a small magnetic field. Our concept is based on a superconductor-normal metal-superconductor interferometer in which the normal metal weak-link is tunnel coupled to a ferromagnetic insulator and a Zeeman split superconductor. Upon application of an external magnetic flux, the interferometer enables phase-coherent manipulation of thermoelectric properties whilst offering efficiencies which approach the Carnot limit.

  8. DFT and post-DFT studies of metallic MXY3-type compounds for low temperature TE applications

    NASA Astrophysics Data System (ADS)

    Bilal, M.; Saifullah; Ahmad, Iftikhar; Jalali-Asadabadi, S.; Ahmad, Rashid; Shafiq, M.

    2016-10-01

    In this paper, thermoelectric properties of carbon and nitrogen based twenty metallic antiperovskites MXY3 (M=Al, Ga, Ir, Mg, Pd, Pt, Rh; X=C, N; Y=Mn, Ni, Sc, Ti, Cr, Fe) using ab-initio density functional theory and post-DFT Boltzmann's techniques are investigated. The electronic properties of these compounds are also discussed. We find high values of Seebeck coefficient and small values of electronic thermal conductivity for AlCTi3, AlNSc3, AlCNi3, AlNTi3, GaCCr3 and MgCNi3 between -0.25 and 0.25 eV chemical potential. These results show high dimensionless figure of merit in metallic materials and therefore, we predict these materials can be potential candidates for low temperature thermoelectric applications.

  9. Effect of low-temperature degradation on the mechanical and microstructural properties of tooth-colored 3Y-TZP ceramics.

    PubMed

    Nakamura, K; Harada, A; Ono, M; Shibasaki, H; Kanno, T; Niwano, Y; Adolfsson, E; Milleding, P; Örtengren, U

    2016-01-01

    The aim of the present study was to evaluate the effects of low-temperature degradation (LTD) induced by autoclaving on the mechanical and microstructural properties of tooth-colored 3 mol% yttria-stabilized tetragonal zirconia polycrystals (3Y-TZP). In total, 162 disc-shaped 3Y-TZP specimens were prepared. Two-thirds of the specimens were shaded by either the infiltration or powder mixing methods while the remaining specimens were used without coloring. The specimens were autoclaved at 134 °C for 0, 10, and 100 h to induce LTD (n=18 for each group). Chemical compositions were analyzed with X-ray fluorescence spectroscopy. Biaxial flexural strength was measured using a piston-on-three-ball test. The surface fraction and penetration depth of the monoclinic phase were examined using X-ray diffraction and scanning electron microscopy, respectively. The tooth-colored 3Y-TZP specimens contained Fe2O3 and Er2O3 (infiltration technique), and Fe2O3 (powder mixing method) at concentrations of<0.5 wt%. The tooth-colored 3Y-TZP had higher strength than the non-colored material after 100 h of autoclaving. In terms of surface fraction and penetration depth, the generation of monoclinic phase was significantly lower in the tooth-colored 3Y-TZP than in the non-colored material. The tooth-colored 3Y-TZP possessed equivalent biaxial flexural strength to that of the non-colored material and higher resistance to LTD regardless of the coloring technique (infiltration technique or powder mixing method) when the coloring pigments were contained at concentrations used in the present study. PMID:26382971

  10. Structure and magnetic properties of low-temperature phase Mn-Bi nanosheets with ultra-high coercivity and significant anisotropy

    SciTech Connect

    Liu, Rongming E-mail: shenbg@iphy.ac.cn; Zhang, Ming; Niu, E; Li, Zhubai; Zheng, Xinqi; Wu, Rongrong; Zuo, Wenliang; Shen, Baogen; Hu, Fengxia; Sun, Jirong

    2014-05-07

    The microstructure, crystal structure, and magnetic properties of low-temperature phase (LTP) Mn-Bi nanosheets, prepared by surfactant assistant high-energy ball milling (SA-HEBM) with oleylamine and oleic acid as the surfactant, were examined with scanning electron microscopy, X-ray diffraction, and vibrating sample magnetometer, respectively. Effect of ball-milling time on the coercivity of LTP Mn-Bi nanosheets was systematically investigated. Results show that the high energy ball milling time from tens of minutes to several hours results in the coercivity increase of Mn-Bi powders and peak values of 14.3 kOe around 10 h. LTP Mn-Bi nanosheets are characterized by an average thickness of tens of nanometers, an average diameter of ∼1.5 μm, and possess a relatively large aspect ratio, an ultra-high room temperature coercivity of 22.3 kOe, a significant geometrical and magnetic anisotropy, and a strong (00l) crystal texture. Magnetization and demagnetization behaviors reveal that wall pinning is the dominant coercivity mechanism in these LTP Mn-Bi nanosheets. The ultrafine grain refinement introduced by the SA-HEBM process contribute to the ultra-high coercivity of LTP Mn-Bi nanosheets and a large number of defects put a powerful pinning effect on the magnetic domain movement, simultaneously. Further magnetic measurement at 437 K shows that a high coercivity of 17.8 kOe and a strong positive temperature coefficient of coercivity existed in the bonded permanent magnet made by LTP Mn-Bi nanosheets.

  11. Structure and magnetic properties of low-temperature phase Mn-Bi nanosheets with ultra-high coercivity and significant anisotropy

    NASA Astrophysics Data System (ADS)

    Liu, Rongming; Zhang, Ming; Niu, E.; Li, Zhubai; Zheng, Xinqi; Wu, Rongrong; Zuo, Wenliang; Shen, Baogen; Hu, Fengxia; Sun, Jirong

    2014-05-01

    The microstructure, crystal structure, and magnetic properties of low-temperature phase (LTP) Mn-Bi nanosheets, prepared by surfactant assistant high-energy ball milling (SA-HEBM) with oleylamine and oleic acid as the surfactant, were examined with scanning electron microscopy, X-ray diffraction, and vibrating sample magnetometer, respectively. Effect of ball-milling time on the coercivity of LTP Mn-Bi nanosheets was systematically investigated. Results show that the high energy ball milling time from tens of minutes to several hours results in the coercivity increase of Mn-Bi powders and peak values of 14.3 kOe around 10 h. LTP Mn-Bi nanosheets are characterized by an average thickness of tens of nanometers, an average diameter of ˜1.5 μm, and possess a relatively large aspect ratio, an ultra-high room temperature coercivity of 22.3 kOe, a significant geometrical and magnetic anisotropy, and a strong (00l) crystal texture. Magnetization and demagnetization behaviors reveal that wall pinning is the dominant coercivity mechanism in these LTP Mn-Bi nanosheets. The ultrafine grain refinement introduced by the SA-HEBM process contribute to the ultra-high coercivity of LTP Mn-Bi nanosheets and a large number of defects put a powerful pinning effect on the magnetic domain movement, simultaneously. Further magnetic measurement at 437 K shows that a high coercivity of 17.8 kOe and a strong positive temperature coefficient of coercivity existed in the bonded permanent magnet made by LTP Mn-Bi nanosheets.

  12. Effect of low-temperature degradation on the mechanical and microstructural properties of tooth-colored 3Y-TZP ceramics.

    PubMed

    Nakamura, K; Harada, A; Ono, M; Shibasaki, H; Kanno, T; Niwano, Y; Adolfsson, E; Milleding, P; Örtengren, U

    2016-01-01

    The aim of the present study was to evaluate the effects of low-temperature degradation (LTD) induced by autoclaving on the mechanical and microstructural properties of tooth-colored 3 mol% yttria-stabilized tetragonal zirconia polycrystals (3Y-TZP). In total, 162 disc-shaped 3Y-TZP specimens were prepared. Two-thirds of the specimens were shaded by either the infiltration or powder mixing methods while the remaining specimens were used without coloring. The specimens were autoclaved at 134 °C for 0, 10, and 100 h to induce LTD (n=18 for each group). Chemical compositions were analyzed with X-ray fluorescence spectroscopy. Biaxial flexural strength was measured using a piston-on-three-ball test. The surface fraction and penetration depth of the monoclinic phase were examined using X-ray diffraction and scanning electron microscopy, respectively. The tooth-colored 3Y-TZP specimens contained Fe2O3 and Er2O3 (infiltration technique), and Fe2O3 (powder mixing method) at concentrations of<0.5 wt%. The tooth-colored 3Y-TZP had higher strength than the non-colored material after 100 h of autoclaving. In terms of surface fraction and penetration depth, the generation of monoclinic phase was significantly lower in the tooth-colored 3Y-TZP than in the non-colored material. The tooth-colored 3Y-TZP possessed equivalent biaxial flexural strength to that of the non-colored material and higher resistance to LTD regardless of the coloring technique (infiltration technique or powder mixing method) when the coloring pigments were contained at concentrations used in the present study.

  13. Synthesis and thermoelectric properties of Bi{sub 2}O{sub 2}Se nanosheets

    SciTech Connect

    Zhang, Kaiyou; Hu, Chenguo; Kang, Xueliang; Wang, Shuxia; Xi, Yi; Liu, Hong

    2013-10-15

    Graphical abstract: Sheet-like Bi{sub 2}O{sub 2}Se is synthesized by composite-molten-salt (CMS) method. The film made from the as-synthesized Bi{sub 2}O{sub 2}Se nanosheets show very low thermal conductivity and high electrical conductivity. - Highlights: • Bi{sub 2}O{sub 2}Se nanosheets are synthesized by the composite-molten-salt approach. • Thermoelectric properties of a film consisting of Bi{sub 2}O{sub 2}Se are investigated. • The film shows very low thermal conductivity and high electrical conductivity. - Abstract: The pure tetragonal bismuth oxiselenide nanosheets are synthesized by the composite-molten-salt approach at 200 °C. Field emission scanning electron microscopy, X-ray diffraction, and energy dispersive X-ray spectroscopy are used to characterize the structure, morphology, and composition of the sample. The results show that the thickness of the nanosheets is about 120 nm. The sample for thermoelectric property measurements is prepared using cold pressing method. Thermoelectric properties, including electrical conductivity, Seebeck coefficient and thermal conductivity, are measured from room temperature to 470 K. The results show that the sample exhibits n-type semiconductor behavior with low thermal conductivity (κ{sub 300} = 0.346 Wm{sup −1} K{sup −1}, and κ{sub 470} = 0.458 Wm{sup −1} K{sup −1}). Although the obtained figure of merit is small, it would be enhanced with increase in temperature.

  14. Effect of sulfur doping on thermoelectric properties of tin selenide – A first principles study

    SciTech Connect

    Jayaraman, Aditya; Molli, Muralikrishna Kamisetti, Venkataramaniah

    2015-06-24

    In this work we present the thermoelectric properties of tin selenide (SnSe) and sulfur doped tin selenide(SnSe{sub (1-x)}S{sub x}, x= 0.125 and 0.25) obtained using first principles calculations. We investigated the electronic band structure using the FP-LAPW method within the sphere of the density functional theory. Thermoelectric properties were calculated using BOLTZTRAP code using the constant relaxation time approximation at three different temperatures 300, 600 and 800 K. Seebeck coefficient (S) was found to decrease with increasing temperature, electrical conductivity (σ/τ) was almost constant in the entire temperature range and thermal conductivity (κ/τ) increased with increasing temperature for all samples. Sulfur doped samples showed enhanced seebeck coefficient, decreased thermal conductivity and decreased electrical conductivity at all temperatures. At 300 K, S increased from 1500 µV/K(SnSe) to 1720μV/K(SnSe{sub 0.75}S{sub 0.25}), thermal conductivity decreased from 5 × 10{sup 15} W/mKs(SnSe) to 3 × 10{sup 15} W/mKs(SnSe{sub 0.75}S{sub 0.25}), electrical conductivity decreased from 7 × 10{sup 20}/Ωms(SnSe) to 5 × 10{sup 20} /Ωms(SnSe{sub 0.75}S{sub 0.25}). These calculations show that sulfur doped tin selenide exhibit better thermoelectric properties than undoped tin selenide.

  15. Rapid characterization of thermoelectric properties of composition spread (La 1- xCa x)VO 3 films

    NASA Astrophysics Data System (ADS)

    Itaka, K.; Wang, Q. J.; Minami, H.; Kawaji, H.; Koinuma, H.

    2004-02-01

    Vanadium oxides possess various interesting properties due to multivalence of a vanadium atom and attract our interest as a target material for the exploration of new applications. We investigated vanadates (La 1- xCa x)VO 3 with a perovskite structure as thermoelectric (TE) materials because heavy electrons in vanadates are expected to generate large thermopower. To proceed the investigation of thermoelectric properties of the composition spread library more efficiently, we devised a new instrument of multi-channel measurement of their thermoelectric properties. The polarity of Seebeck coefficients changed from positive (0≤ x≤0.2) to negative (0.2< x<1.0), and the composition where the film shows the highest power factor in our investigated range is around pure LaVO 3 ( x≈0).

  16. Energy from low temperature differences

    NASA Astrophysics Data System (ADS)

    Parsons, B. K.

    1985-05-01

    A number of energy conservation and alternative energy approaches utilize a low temperature heat source. Applications in this category include: solar ponds, ocean thermal energy conversion (OTEC), low temperature solar thermal, geothermal, and waste heat recovery and bottoming cycles. Low temperature power extraction techniques are presented and the differences between closed and open Rankine power cycles are discussed. Specific applications and technical areas of current research in OTEC along with a breakdown of plant operating conditions and a rough cost estimate illustrate how the use of low temperature power conversion technology can be cost effective.

  17. Thermoelectric properties of Al doped Mg{sub 2}Si material

    SciTech Connect

    Kaur, Kulwinder Kumar, Ranjan; Rani, Anita

    2015-08-28

    In the present paper we have calculated thermoelectric properties of Al doped Mg{sub 2}Si material (Mg{sub 2−x}Al{sub x}Si, x=0.06) using Pseudo potential plane wave method based on DFT and Semi classical Boltzmann theory. The calculations showed n-type conduction, indicating that the electrical conduction are due to electron. The electrical conductivity increasing with increasing temperature and the negative value of Seebeck Coefficient also show that the conduction is due to electron. The thermal conductivity was increased slightly by Al doping with increasing temperature due to the much larger contribution of lattice thermal conductivity over electronic thermal conductivity.

  18. Thermoelectric properties of InxPbxCo4Sb12 prepared by HPHT

    NASA Astrophysics Data System (ADS)

    Deng, Le; Wang, Li Bin; Qin, Jie Ming; Jia, Xiao Peng; Ma, Hong An

    2016-11-01

    We prepared InxPbxCo4Sb12 by high-pressure and high-temperature (HPHT) method. Samples were characterized by X-ray diffraction (XRD), electron microprobe analysis and thermoelectric properties measurements. The Seebeck coefficient, electrical resistivity and thermal conductivity of InxPbxCo4Sb12 samples were all performed in the temperature range of 323-723K. With the increasing synthetic pressure, the Seebeck coefficient of In0.5Pb0.1Co4Sb12 samples, which synthesized between 1.5 GPa-2.3 GPa, showed an obvious increase while the thermal conductivity exhibited a substantial reduction.

  19. Proton irradiation effects on the thermoelectric properties in single-crystalline Bi nanowires

    SciTech Connect

    Chang, Taehoo; Kim, Jeongmin; Song, Min-Jung; Lee, Wooyoung

    2015-05-15

    The effects of proton irradiation on the thermoelectric properties of Bi nanowires (Bi-NWs) were investigated. Single crystalline Bi-NWs were grown by the on-film formation of nanowires method. The devices based on individual Bi-NWs were irradiated with protons at different energies. The total number of displaced atoms was estimated using the Kinchin-Pease displacement model. The electric conductivity and Seebeck coefficient in the Bi-NW devices were investigated before and after proton irradiation at different temperatures. Although the Seebeck coefficient remained stable at various irradiation energies, the electrical conductivity significantly declined with increasing proton energy up to 40 MeV.

  20. Thermoelectric properties of n-type SrTiO3

    NASA Astrophysics Data System (ADS)

    Sun, Jifeng; Singh, David J.

    2016-10-01

    We present an investigation of the thermoelectric properties of cubic perovskite SrTiO3. The results are derived from a combination of calculated transport functions obtained from Boltzmann transport theory in the constant scattering time approximation based on the electronic structure and existing experimental data for La-doped SrTiO3. The figure of merit ZT is modeled with respect to carrier concentration and temperature. The model predicts a relatively high ZT at optimized doping and suggests that the ZT value can reach 0.7 at T = 1400 K. Thus ZT can be improved from the current experimental values by carrier concentration optimization.

  1. Properties of p- and n-Type PbTe Microwires for Thermoelectric Devices

    NASA Astrophysics Data System (ADS)

    Bhatta, Rudra P.; Henderson, Mark; Eufrasio, Andreza; Pegg, Ian L.; Dutta, Biprodas

    2014-11-01

    In thermopower measurements, microwires fabricated from as-purchased bulk PbTe exhibits p-type behavior between room temperature and ˜600 K. At higher temperatures, it undergoes majority carrier inversion and exhibits n-type behavior. We report on the preparation and properties of potassium oxide and Zn-doped PbTe microwires, which exhibit stable p- and n-type behavior, respectively, between room temperature and 725 K. Thermoelectric figures of merit (ZT) are reported for device components prepared from bundles of such p- and n-type microwires in a glass matrix.

  2. Quasiparticle band structures and thermoelectric transport properties of p-type SnSe

    SciTech Connect

    Shi, Guangsha; Kioupakis, Emmanouil

    2015-02-14

    We used density functional and many-body perturbation theory to calculate the quasiparticle band structures and electronic transport parameters of p-type SnSe both for the low-temperature Pnma and high-temperature Cmcm phases. The Pnma phase has an indirect band gap of 0.829 eV, while the Cmcm has a direct band gap of 0.464 eV. Both phases exhibit multiple local band extrema within an energy range comparable to the thermal energy of carriers from the global extrema. We calculated the electronic transport coefficients as a function of doping concentration and temperature for single-crystal and polycrystalline materials to understand the previous experimental measurements. The electronic transport coefficients are highly anisotropic and are strongly affected by bipolar transport effects at high temperature. Our results indicate that SnSe exhibits optimal thermoelectric performance at high temperature when doped in the 10{sup 19}–10{sup 20 }cm{sup −3} range.

  3. Thermoelectric properties of Al-doped Mg2Si thin films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chen, Zhi-jian; Zhou, Bai-yang; Li, Jian-xin; Wen, Cui-lian

    2016-11-01

    The Al-doped Mg2Si thin films were fabricated by two-target alternative magnetron sputtering technique, and the influences of different Al doping contents on the thermoelectric properties of Al-doped Mg2Si thin films were investigated. The compositions, crystal structures, electronic transport properties and thermoelectric properties of the thin films were examined using energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), Hall coefficient measurement and Seebeck coefficient measurement system, respectively. The EDS results show that the thin films doped with Al target sputtering power of 30 W, 60 W and 90 W have the Al content of 0.68 at.%, 1.56 at.% and 2.85 at.%, respectively. XRD results indicate that the diffraction peaks of Mg2Si become stronger with increasing Al dopant. The results of Hall coefficient measurement and Seebeck coefficient measurement system reveal that all the samples are n-type. The conductivities of Al-doped Mg2Si thin films are significantly greater than that of undoped Mg2Si thin film, and increase with increasing Al doping content. With the increase of temperature, the absolute value of the Seebeck coefficients of Mg2Si base thin films increase firstly and then decrease. The maximum power factor obtained is 3.8 mW m-1 k-2 for 1.56 at.% Al-doped Mg2Si thin film at 573 K.

  4. Thermoelectric properties of rocksalt ZnO from first-principles calculations

    SciTech Connect

    Alvarado, Andrew; Attapattu, Jeevake; Zhang, Yi; Chen, Changfeng

    2015-10-28

    Zinc oxide (ZnO) undergoes a pressure-induced structural transition from its normal ambient-pressure wurtzite (WZ) phase to a rocksalt (RS) phase around 10 GPa. A recent experiment shows that the high-pressure RS ZnO phase can be recovered and stabilized at ambient conditions, which raises exciting prospects of expanding the range of properties of ZnO. For a fundamental understanding of the RS ZnO phase, we have performed first-principles calculations to determine its electronic, phonon, and thermodynamic properties at high (20 GPa) and ambient (0 GPa) pressure. Furthermore, we have calculated its electrical and thermal transport properties, which allow an evaluation of its thermoelectric figure of merit ZT at different temperature and doping levels. Our calculations show that the ambient-pressure RS ZnO phase can reach ZT values of 0.25 to 0.3 under both n-type and p-type doping in a large temperature range of 400 K to 800 K, which is considerably lower than the temperature range of 1400 K to 1600 K where WZ ZnO reaches similar ZT values. These results establish RS ZnO as a promising material for thermoelectric devices designed to operate at temperatures desirable for many heat recovery applications.

  5. Electrical and thermal transport property studies of high-temperature thermoelectric materials

    NASA Astrophysics Data System (ADS)

    Bates, J. L.; Garnier, J. E.; Olsen, L. C.; Griffin, C. W.

    1984-07-01

    The first year of this research emphasized the study of electronically conducting oxides with varied transport characteristics, an evaluation of theoretical models, and the determination of a high-temperature transport property data base. Oxide systems based on SnO2-In2O3, (La, Y) (Mg,Ca,Sr) CrO3, HfO2-RxOy-In3O3 and La(Sr)MnO3 were selected for initial studies and represent different crystallographic/defect structures and transport characteristics. The electrical conductivity, Seeback coefficient and thermal conductivity for these oxides are being measured and have provided a preliminary data base for evaluating transport properties and the figure of merit. The purpose of this report is to describe the technical results obtained during the first year's study of high-temperature thermoelectric materials. The scope of the research is (1) to develop theoretical models for electrical, thermal, and thermoelectric behavior of refractory oxide materials, (2) to determine electrical transport properties necessary to develop and test these models, (3) to determine methods for increasing the figure of merit in refractory oxide systems by varying composition, defect structure. microstructure, etc., and (4) to use these models to establish theoretical and empirical limits of the figure of merit for these oxides and other refractory materials.

  6. Towards Improved Thermoelectric Generator Materials

    NASA Astrophysics Data System (ADS)

    Julian Goldsmid, H.

    2016-07-01

    Over recent years, new thermoelectric materials have been developed with values for the dimensionless figure of merit, zT, substantially greater than unity. This has opened up the possibility of many new applications, particularly those involving the utilisation of waste heat. However, further improvements are necessary if thermoelectric generation is to have a significant impact on the world's energy problems. It is well known that zT for a single energy band can be related to the Fermi energy and a parameter (μ/λ L) (m*/m)3/2, where μ is the carrier mobility, m*/m is the ratio of the carrier effective mass to the mass of a free electron and λ L is the lattice thermal conductivity. However, even when this parameter tends towards infinity, zT does not become much greater than 1 unless the Fermi level lies within the energy gap, far from the appropriate band edge. Thus, the magnitude of the energy gap is becoming of increasing importance. The two-fold requirements of a high value of (μ/λ L) (m*/m)3/2 and a sufficiently large energy gap are discussed. It is also shown that the likelihood of the required conditions being met at elevated temperatures can be predicted from low-temperature observations. It is, of course, much more difficult to make accurate determinations of the thermoelectric properties at higher temperatures.

  7. Investigation of thermoelectric properties of ZnV2O4 compound at high temperatures

    NASA Astrophysics Data System (ADS)

    Singh, Saurabh; Maurya, R. K.; Pandey, Sudhir K.

    2016-10-01

    In the present work, we report the experimental thermopower (α) data for ZnV2O4 in the high temperature range 300-600 K. The values of α are found to be  ˜184 and  ˜126 μV K-1 at  ˜300 and  ˜600 K, respectively. The temperature dependent behavior of α is almost linear in the measured temperature range. In order to understand the large and positive α values observed in this compound, we have also investigated the electronic and thermoelectric properties by combining the ab initio electronic structure calculations with Boltzmann transport theory. Within the local spin density approximation plus Hubbard U, the anti-ferromagnetic ground state calculation gives an energy gap  ˜0.33 eV for U  =  3.7 eV, which is in accordance with the experimental results. The effective mass for holes in the valence band is found nearly four times that of electrons in the conduction band. The large effective mass of holes are mainly responsible for the observed positive and large α value in this compound. There is reasonably good matching between calculated and experimental α value in the temperature range 300-410 K. The power factor calculation shows that thermoelectric properties in the high temperature region can be enhanced by tuning the sample synthesis conditions and suitable doping. The estimated value of figure-of-merit, ZT, for p-type doped ZnV2O4 is  ˜0.3 in the temperature range 900-1400 K. It suggests that by an appropriate amount of p-type doping, this compound can be a good thermoelectric material in the high temperature region.

  8. Electronic and thermoelectric transport properties for a zigzag graphene-silicene-graphene heterojunction modulated by external field

    NASA Astrophysics Data System (ADS)

    Zhou, Benhu; Zhou, Benliang; Zeng, Yangsu; Zhou, Guanghui; Duan, Manyi

    2016-04-01

    we investigate the electronic and thermoelectric transport properties for a graphene-silicene-graphene (GSG) heterojunction with zigzag-edge nanoribbons under the modulation of the effective spin-orbit coupling (SOC) and potential energy. Using the nonequilibrium Green's function method, it is demonstrated that both the transmission coefficient T and the charge Seebeck coefficient SC display the oscillatory behavior and can be effectively modulated by effective SOC λSO and the potential energy V0. Furthermore, the even-odd difference in transport and thermoelectric properties disappears in the GSG heterojunction. Additionally, the dependence of the transmission coefficient and the charge Seebeck coefficient on Anderson disorder strength has been studied.

  9. High-temperature thermoelectric properties of the β-As2-xBixTe3 solid solution

    NASA Astrophysics Data System (ADS)

    Vaney, J.-B.; Delaizir, G.; Piarristeguy, A.; Monnier, J.; Alleno, E.; Lopes, E. B.; Gonçalves, A. P.; Pradel, A.; Dauscher, A.; Candolfi, C.; Lenoir, B.

    2016-10-01

    Bi2Te3-based compounds are a well-known class of outstanding thermoelectric materials. β-As2Te3, another member of this family, exhibits promising thermoelectric properties around 400 K when appropriately doped. Herein, we investigate the high-temperature thermoelectric properties of the β-As2-xBixTe3 solid solution. Powder X-ray diffraction and scanning electron microscopy experiments showed that a solid solution only exists up to x = 0.035. We found that substituting Bi for As has a beneficial influence on the thermopower, which, combined with extremely low thermal conductivity values, results in a maximum ZT value of 0.7 at 423 K for x = 0.017 perpendicular to the pressing direction.

  10. Revealing the optoelectronic and thermoelectric properties of the Zintl quaternary arsenides ACdGeAs{sub 2} (A = K, Rb)

    SciTech Connect

    Azam, Sikander; Khan, Saleem Ayaz; Goumri-Said, Souraya

    2015-10-15

    Highlights: • Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) are chalcopyrite and semiconductors. • Their direct band gap is suitable for PV, optolectronic and thermoelectric applications. • Combination of DFT and Boltzmann transport theory is employed. • The present arsenides are found to be covalent materials. - Abstract: Chalcopyrite semiconductors have attracted much attention due to their potential implications in photovoltaic and thermoelectric applications. First principle calculations were performed to investigate the electronic, optical and thermoelectric properties of the Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) using the full potential linear augmented plane wave method and the Engle–Vosko GGA (EV–GGA) approximation. The present compounds are found semiconductors with direct band gap and covalent bonding character. The optical transitions are investigated via the dielectric function (real and imaginary parts) along with other related optical constants including refractive index, reflectivity and energy-loss spectrum. Combining results from DFT and Boltzmann transport theory, we reported the thermoelectric properties such as the Seebeck’s coefficient, electrical and thermal conductivity, figure of merit and power factor as function of temperatures. The present chalcopyrite Zintl quaternary arsenides deserve to be explored for their potential applications as thermoelectric materials and for photovoltaic devices.

  11. Anisotropic thermoelectric properties in layered complex nitrides with α-NaFeO2-type structure

    NASA Astrophysics Data System (ADS)

    Ohkubo, Isao; Mori, Takao

    2016-10-01

    Electronic structures and thermoelectric transport properties of α-NaFeO2-type d0-electron layered complex nitrides AMN2 (A = Sr or Na; M = Zr, Hf, Nb, Ta) were evaluated using density-functional theory and Boltzmann theory calculations. Despite the layered crystal structure, all materials had three-dimensional electronic structures. Sr(Zr, Hf)N2 exhibited isotropic electronic transport properties because of the contribution of the Sr 4d orbitals to the conduction band minimums (CBMs) in addition to that of the Zr 4d (Hf 5d) orbitals. Na(Nb,Ta)N2 showed weak anisotropic electronic transport properties due to the main contribution of the Nb 4d (Ta 5d) and N 2p orbitals to the CBMs and no contribution of the Na orbitals.

  12. Improving thermoelectric properties of bulk Si by dispersing VSi2 nanoparticles

    NASA Astrophysics Data System (ADS)

    Yusufu, Aikebaier; Kurosaki, Ken; Ohishi, Yuji; Muta, Hiroaki; Yamanaka, Shinsuke

    2016-06-01

    In order to enhance the thermoelectric properties of Si-based bulk materials, the lattice thermal conductivity (κlat) should be reduced with little degradation of the electrical properties. Our group had previously demonstrated that the phosphorus (P)-rich nanoscale precipitates formed naturally in heavily P-doped bulk Si scatter phonons more effectively than carriers, resulting in a high figure of merit (ZT) [A. Yusufu et al., Nanoscale 6, 13921 (2014)]. Here, we successfully prepared heavily P-doped bulk Si containing metallic VSi2 nanoparticles through the ball milling of Si, V, and P and subsequent spark plasma sintering. The VSi2 nanoparticles did not affect the electrical properties of Si significantly but greatly decreased the κlat, leading to a marked increase in ZT. The maximum ZT value, which was 0.4, was obtained at 1073 K, which is two times higher than that for Si.

  13. Effect of pressure on electronic and thermoelectric properties of magnesium silicide: A density functional theory study

    NASA Astrophysics Data System (ADS)

    Kulwinder, Kaur; Ranjan, Kumar

    2016-05-01

    We study the effect of pressure on electronic and thermoelectric properties of Mg2Si using the density functional theory and Boltzmann transport equations. The variation of lattice constant, band gap, bulk modulus with pressure is also analyzed. Further, the thermoelectric properties (Seebeck coefficient, electrical conductivity, electronic thermal conductivity) have been studied as a function of temperature and pressure up to 1200 K. The results show that Mg2Si is an n-type semiconductor with a band gap of 0.21 eV. The negative value of the Seebeck coefficient at all pressures indicates that the conduction is due to electrons. With the increase in pressure, the Seebeck coefficient decreases and electrical conductivity increases. It is also seen that, there is practically no effect of pressure on the electronic contribution of thermal conductivity. The paper describes the calculation of the lattice thermal conductivity and figure of merit of Mg2Si at zero pressure. The maximum value of figure of merit is attained 1.83×10-3 at 1000 K. The obtained results are in good agreement with the available experimental and theoretical results. Project supported by the Council of Scientific & Industrial Research (CSIR), India.

  14. Effects of doping on transport properties in Cu-Bi-Se-based thermoelectric materials.

    PubMed

    Hwang, Jae-Yeol; Mun, Hyeon A; Kim, Sang Il; Lee, Ki Moon; Kim, Jungeun; Lee, Kyu Hyoung; Kim, Sung Wng

    2014-12-15

    The thermoelectric properties of Zn-, In-, and I-doped Cu1.7Bi4.7Se8 pavonite homologues were investigated in the temperature range from 300 to 560 K. On the basis of the comprehensive structural analysis using Rietveld refinement of synchrotron radiation diffraction for Cu(x+y)Bi(5-y)Se8 compounds with the inherently disordered crystallographic sites, we demonstrate a doping strategy that provides a simultaneous control for enhanced electronic transport properties by the optimization of carrier concentration and exceptionally low lattice thermal conductivity by the formation of point defects. Substituted Zn or In ions on Cu site was found to be an effective phonon scattering center as well as an electron donor, while doping on Bi site showed a moderate effect for phonon scattering. In addition, we achieved largely enhanced power factor in small amount of In doping on Cu site by increased electrical conductivity and moderately decreased Seebeck coefficient. Coupled with a low lattice thermal conductivity originated from intensified point defect phonon scattering by substituted In ions with host Cu ions, a thermoelectric figure of merit ZT of 0.24 at 560 K for Cu1.6915In0.0085Bi4.7Se8 was achieved, yielding 30% enhancement compared with that of a pristine Cu1.7Bi4.7Se8 at the same temperature.

  15. Structural and Thermoelectric Properties of Polycrystalline p-Type Mg2- x Li x Si

    NASA Astrophysics Data System (ADS)

    Nieroda, P.; Kolezynski, A.; Oszajca, M.; Milczarek, J.; Wojciechowski, K. T.

    2016-07-01

    The aim of this study was to determine the location of Li atoms in Mg2Si structure, and verify the influence of Li dopant on the transport properties of obtained thermoelectric materials. The results of theoretical studies of the electronic band structure (full potential linearized augmented plane wave method) in Li-doped Mg2Si are presented. Theoretical calculations indicate that only in the case when Li is located in the Mg position, the samples will have p-type conduction. To confirm the theoretical predictions, a series of samples with nominal composition Mg2- x Li x Si ( x = 0-0.5) were prepared using the spark plasma sintering (SPS) method. Structural and phase composition analyses were carried out by x-ray and neutron powder diffraction, as well as scanning electron microscopy. Neutron diffraction studies confirmed that the lithium atoms substitute magnesium in the Mg2Si structure. The investigations of the influence of Li dopant on the transport properties, i.e. electrical conductivity, the Seebeck coefficient and the thermal conductivity, were carried out in a temperature range from 340 K to 720 K. Carrier concentration was measured with Hall method. The positive values of the Seebeck coefficient and Hall coefficient indicate that all examined samples show p-type conductivity. On the basis of the experimental data, the temperature dependencies of the thermoelectric figure of merit ZT were calculated.

  16. Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands

    SciTech Connect

    Wickramaratne, Darshana E-mail: rlake@ece.ucr.edu; Lake, Roger K. E-mail: rlake@ece.ucr.edu; Zahid, Ferdows

    2015-08-21

    The valence band of a variety of few-layer, two-dimensional materials consist of a ring of states in the Brillouin zone. The energy-momentum relation has the form of a “Mexican hat” or a Rashba dispersion. The two-dimensional density of states is singular at or near the band edge, and the band-edge density of modes turns on nearly abruptly as a step function. The large band-edge density of modes enhances the Seebeck coefficient, the power factor, and the thermoelectric figure of merit ZT. Electronic and thermoelectric properties are determined from ab initio calculations for few-layer III–VI materials GaS, GaSe, InS, InSe, for Bi{sub 2}Se{sub 3}, for monolayer Bi, and for bilayer graphene as a function of vertical field. The effect of interlayer coupling on these properties in few-layer III–VI materials and Bi{sub 2}Se{sub 3} is described. Analytical models provide insight into the layer dependent trends that are relatively consistent for all of these few-layer materials. Vertically biased bilayer graphene could serve as an experimental test-bed for measuring these effects.

  17. Impact of parasitic thermal effects on thermoelectric property measurements by Harman method

    SciTech Connect

    Kwon, Beomjin Baek, Seung-Hyub; Keun Kim, Seong; Kim, Jin-Sang

    2014-04-15

    Harman method is a rapid and simple technique to measure thermoelectric properties. However, its validity has been often questioned due to the over-simplified assumptions that this method relies on. Here, we quantitatively investigate the influence of the previously ignored parasitic thermal effects on the Harman method and develop a method to determine an intrinsic ZT. We expand the original Harman relation with three extra terms: heat losses via both the lead wires and radiation, and Joule heating within the sample. Based on the expanded Harman relation, we use differential measurement of the sample geometry to measure the intrinsic ZT. To separately evaluate the parasitic terms, the measured ZTs with systematically varied sample geometries and the lead wire types are fitted to the expanded relation. A huge discrepancy (∼28%) of the measured ZTs depending on the measurement configuration is observed. We are able to separately evaluate those parasitic terms. This work will help to evaluate the intrinsic thermoelectric property with Harman method by eliminating ambiguities coming from extrinsic effects.

  18. Synthesis and Optimization of Thermoelectric Properties of Zn(x)Sb3

    NASA Technical Reports Server (NTRS)

    Doan-Nguyen, Vicky V.

    2005-01-01

    High-performance thermoelectric materials are studied to investigate their abilities to optimize electrical and minimize thermal conductivities. A stoichiometric range of p-type zinc antimonide compounds was synthesized to analyze the trends in their thermoelectric properties. Zn(x)Sb3 (x=3.80, 3.85, 3.90, 3.95, 4.00, 4.05, 4.10) was reacted at 750 C and annealed at 300 C for 24 hours at each temperature. Electronic transport properties such as Seebeck and Hall Effect were measured to analyze possible trends in the set of compositions. SEM, EDS, and XRD were used to quantify both ingots and hot-pressed samples to confirm that they were single-phase and of the expected stoichiometries. Recent SEM data indicated that Zn(3.90)Sb3 and Zn(4.00)Sb3 samples were actually Zn3Sb2. In hopes of further improving the figure-of-merit (ZT) of the binary system, V, Cr, Mn, Fe, Co, In, and Sn were used to dope (Zn(0.95)M(0.05))(3.95)Sb3.

  19. Thermoelectric Properties of Pristine and Doped Graphene Nanosheets and Graphene Nanoribbons: Part II

    NASA Astrophysics Data System (ADS)

    Muley, Sarang V.; Ravindra, N. M.

    2016-06-01

    In Part II of this study, approaches to improve the thermoelectric figure of merit ( ZT) of graphene nanosheets and nanoribbons is discussed. The presence of vacancies in graphene is found to increase the ZT of zigzag graphene nanoribbons significantly. Graphene can be a promising material with much better thermoelectric performance than conventional thermoelectrics.

  20. Electronic and structural properties of low-temperature superconductors and ternary pnictides ANi2Pn2 ( A=Sr,Ba and Pn=P,As )

    NASA Astrophysics Data System (ADS)

    Shein, I. R.; Ivanovskii, A. L.

    2009-02-01

    Based on first-principles full-potential linearized augmented plane wave method (FLAPW)-generalized gradient approximation calculations, we have investigated structural and electronic properties of low-temperature superconductors SrNi2As2 (TC˜0.6K) , BaNi2As2 (TC˜0.7K) , and BaNi2P2 (TC˜3K) , as well as SrNi2P2 . Our results show that the replacement of alkaline-earth metal (Sr↔Ba) and pnictogen (P↔As) types leads to anisotropic deformations of crystal structure caused by strong anisotropy of interatomic bonds. The band structure, density of states, and Fermi-surface features for (Sr,Ba)Ni2(P,As)2 are evaluated and discussed. As distinct from (Ca,Sr,Ba)Fe2As2 —the parent phases for “122” FeAs superconductors—the Fermi level in (Sr,Ba)Ni2(P,As)2 phases is shifted to the bands with higher dispersion E(k) but lower density of states as a result of increased electron concentration. Therefore the Fermi surfaces for (Sr,Ba)Ni2(P,As)2 phases differ essentially from those of the FeAs-based materials and adopt a multisheet three-dimensional type. Our estimations show that (Sr,Ba)Ni2(P,As)2 are within the weak-coupling limit with a small average electron-phonon coupling constant λep˜0.16-0.24 . The bonding in (Sr,Ba)Ni2(P,As)2 is of a complex anisotropic character. Namely, the bonding in [NiP(As)] layers may be described as a mixture of metallic, ionic, and covalent contributions. In turn, between adjacent [NiP(As)] layers and (Sr,Ba) atomic sheets, ionic bonds emerge, whereas between adjacent [NiP(As)]/[NiP(As)] layers covalent bonds occur owing to hybridization of p states of pnictogen atoms.

  1. CsBi4Te6: a new facile synthetic method and mid-temperature thermoelectric performance.

    PubMed

    Lin, Hua; Chen, Hong; Yu, Ju-Song; Zheng, Yu-Jun; Liu, Peng-Fei; Ali Khan, Muhammad; Wu, Li-Ming

    2016-07-26

    CsBi4Te6 is one of the best performing low-temperature thermoelectric (TE) materials. However, it has not received worldwide intensive investigation due to the limitation of synthetic methods. Here we report a new facile approach by not using the reactive Cs metal and the mid-temperature TE properties have been studied for the first time. PMID:27383416

  2. First-principles calculations of thermal, electrical, and thermoelectric transport properties of semiconductors

    NASA Astrophysics Data System (ADS)

    Zhou, Jiawei; Liao, Bolin; Chen, Gang

    2016-04-01

    The transport properties of semiconductors are key to the performance of many solid-state devices (transistors, data storage, thermoelectric cooling and power generation devices, etc). An understanding of the transport details can lead to material designs with better performances. In recent years simulation tools based on first-principles calculations have been greatly improved, being able to obtain the fundamental ground-state properties of materials (such as band structure and phonon dispersion) accurately. Accordingly, methods have been developed to calculate the transport properties based on an ab initio approach. In this review we focus on the thermal, electrical, and thermoelectric transport properties of semiconductors, which represent the basic transport characteristics of the two degrees of freedom in solids—electronic and lattice degrees of freedom. Starting from the coupled electron-phonon Boltzmann transport equations, we illustrate different scattering mechanisms that change the transport features and review the first-principles approaches that solve the transport equations. We then present the first-principles results on the thermal and electrical transport properties of semiconductors. The discussions are grouped based on different scattering mechanisms including phonon-phonon scattering, phonon scattering by equilibrium electrons, carrier scattering by equilibrium phonons, carrier scattering by polar optical phonons, scatterings due to impurities, alloying and doping, and the phonon drag effect. We show how the first-principles methods allow one to investigate transport properties with unprecedented detail and also offer new insights into the electron and phonon transport. The current status of the simulation is mentioned when appropriate and some of the future directions are also discussed.

  3. Thermoelectric efficiency of topological insulators in a magnetic field

    NASA Astrophysics Data System (ADS)

    Tretiakov, O. A.; Abanov, Ar.; Sinova, Jairo

    2012-04-01

    We study the thermoelectric properties of three-dimensional topological insulators in magnetic fields with many holes (or pores) in the bulk. We find that at a high density of these holes in the transport direction the thermoelectric figure of merit, ZT, can be large due to the contribution of the topologically protected conducting surfaces and the suppressed phonon thermal conductivity. By applying an external magnetic field, a subgap can be induced in the surface states' spectrum. We show that the thermoelectric efficiency can be controlled by this tunable subgap leading to values of ZT much greater than 1. Such high values of ZT for reasonable system parameters and its tunability by a magnetic field make this system a strong candidate for applications in the heat management of nanodevices, especially at low temperatures.

  4. Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates

    SciTech Connect

    Cariou, R.; Ruggeri, R.; Tan, X.; Nassar, J.; Roca i Cabarrocas, P.; Mannino, Giovanni

    2014-07-15

    We report on unusual low temperature (175 °C) heteroepitaxial growth of germanium thin films using a standard radio-frequency plasma process. Spectroscopic ellipsometry and transmission electron microscopy (TEM) reveal a perfect crystalline quality of epitaxial germanium layers on (100) c-Ge wafers. In addition direct germanium crystal growth is achieved on (100) c-Si, despite 4.2% lattice mismatch. Defects rising from Ge/Si interface are mostly located within the first tens of nanometers, and threading dislocation density (TDD) values as low as 10{sup 6} cm{sup −2} are obtained. Misfit stress is released fast: residual strain of −0.4% is calculated from Moiré pattern analysis. Moreover we demonstrate a striking feature of low temperature plasma epitaxy, namely the fact that crystalline quality improves with thickness without epitaxy breakdown, as shown by TEM and depth profiling of surface TDD.

  5. Inquisition of reaction parameters on the growth and optical properties of ZnO nanoparticles synthesized via low temperature reaction route

    NASA Astrophysics Data System (ADS)

    Makkar, Meenu; Bhatti, H. S.

    2011-04-01

    A low temperature reaction route via ultrasonication has been demonstrated for the synthesis of ZnO nanoparticles. It is found that the morphology and photoluminescence has strong dependence on the surfactant, triethanolamine (TEA) and chelating agent, citric acid. Polyvinylpyrrolidine (PVP) is used as a capping agent. X-ray powder diffraction (XRD), transmission electron microscopy (TEM), FTIR, UV-Vis absorption and photoluminescence spectra are used to characterize the as-prepared ZnO nanoparticles.

  6. Electronic and thermoelectric transport properties for an armchair graphene-silicene-graphene heterojunction modulated by external field

    NASA Astrophysics Data System (ADS)

    Zhou, Benhu; Zhou, Benliang; Zeng, Yangsu; Zhou, Guanghui; Duan, Manyi

    2016-08-01

    We analytically investigate effective spin-orbit coupling (SOC) and potential energy on electronic and thermoelectric transport properties for a graphene-silicene-graphene (GSG) heterojunction with armchair-edge nanoribbons using nonequilibrium Green's function method. The calculation shows that the transmission coefficient T and the charge Seebeck coefficient SC for armchair-edge GSG junctions display the oscillatory behavior and depend sensitively on both effective SOC λSO and the potential energy V0. Compared with zigzag-edge GSG heterojunctions, armchair-edge GSG heterojunctions are found to posses superior thermoelectric performance, their charge Seebeck coefficients can be improved by one order of magnitude.

  7. Synthesis, Structure, and Basic Magnetic and Thermoelectric Properties of the Light Lanthanide Aurobismuthides.

    PubMed

    Seibel, Elizabeth M; Xie, Weiwei; Gibson, Quinn D; Cava, Robert J

    2016-04-01

    We report the crystal structures and elementary properties of the new aurobismuthides La3Au3Bi4, Ce3Au3Bi4, Pr3Au3Bi4, Nd3Au3Bi4, Sm3Au3Bi4, and Gd3Au3Bi4. These ternary compounds are found only for the large lanthanides and crystallize in the cubic Y3Au3Sb4 structure type, which is a stuffed Th3P4-type derivative. The compounds are electron-precise, leading to semiconducting behavior, and display magnetic properties arising from localized lanthanide f states. Resistivity data, Seebeck coefficient measurements, and electronic structure calculations suggest that these phases are heavily doped, p-type semiconductors. Nd3Au3Bi4 and Sm3Au3Bi4 have Seebeck coefficients of 105 and 190 μV/K at 350 K, respectively, making them worthy of further thermoelectric studies.

  8. Synthesis and Thermoelectric Properties of SnSe by Mechanical Alloying and Spark Plasma Sintering Method

    NASA Astrophysics Data System (ADS)

    Liu, Hongliang; Zhang, Xin; Li, Songhao; Zhou, Ziqun; Liu, Yanqin; Zhang, Jiuxing

    2016-08-01

    The bulks of polycrystalline SnSe materials were successfully prepared by the mechanical alloying (MA) and spark plasma sintering (SPS) method. X-ray powder diffraction analysis showed that pure Sn and Se powders were synthesized into the SnSe phase by MA, and after SPS under 30-120 MPa, the single phase bulks of SnSe materials were successfully prepared. Scanning electron microcopy images displayed that the grain size of SnSe shows refinement with higher pressure. The electrical properties of the sintered samples increased with increasing sintering pressure. The thermal conductivity results show that the thermal conductivity remained low, in the range of 0.50-0.85 W m-1 K-1, with the different sintering pressure. The samples sintered under 100 MPa have the best thermoelectric properties; the dimensionless figure of merit ZT reached 0.71 at 873 K.

  9. Thermoelectric Properties of Hot-Pressed and PECS-Sintered Magnesium-Doped Copper Aluminum Oxide

    NASA Astrophysics Data System (ADS)

    Liu, Chang; Morelli, Donald T.

    2011-05-01

    Copper aluminum oxide (CuAlO2) is considered as a potential candidate for thermoelectric applications. Partially magnesium-doped CuAlO2 bulk pellets were fabricated using solid-state reactions, hot-pressing, and pulsed electric current sintering (PECS) techniques. X-ray diffraction and scanning electron microscopy were adopted for structural analysis. High-temperature transport property measurements were performed on hot-pressed samples. Electrical conductivity increased with Mg doping before secondary phases became significant, while the Seebeck coefficient displayed the opposite trend. Thermal conductivity was consistently reduced as the Mg concentration increased. Effects of Mg doping, preparation conditions, and future modification on this material's properties are discussed.

  10. Effects of Lanthanum Substitution on Thermoelectric Properties of YbZn2Sb2

    NASA Astrophysics Data System (ADS)

    Zhang, Xiong; Peng, Kunling; Guo, Lijie; Yan, Yanchi; Zhan, Hen; Lu, Xu; Gu, Haoshuang; Zhou, Xiaoyuan

    2016-08-01

    La x Yb1-x Zn2Sb2 polycrystalline are prepared by solid-state reaction followed by spark plasma sintering. The effect of La substitution on the thermoelectric properties of La x Yb1-x Zn2Sb2 has been investigated. It is found that the substitution of La for Yb donates extra electrons to compensate for the vacancies and produces point defects to scatter phonons, leading to a significant reduction of the lattice thermal conductivity. As a result, a maximum ZT of 0.4 is obtained at x = 0.01, 18% enhancement in contrast to that of a pure sample as a result of the identical electrical properties and the largely reduced thermal conductivity.

  11. Improvement in Thermoelectric Properties by Tailoring at In and Te Site in In2Te5

    NASA Astrophysics Data System (ADS)

    Sanchela, Anup V.; Thakur, Ajay D.; Tomy, C. V.

    2016-11-01

    We study the role of substitutions at In and Te site in the thermoelectric behavior of In2Te5. Single crystals with compositions In2(Te1- x Se x )5 ( x = 0, 0.05, 0.10) and Fe0.05In1.95(Te0.90Se0.10)5 were prepared using a modified Bridgman-Stockbarger technique. Electrical and thermal transport properties of these single crystals were measured in the temperature range of 6 K to 395 K. A substantial decrease in the thermal conductivity was observed in Fe-substituted samples, attributed to enhanced phonon scattering at point defects. Marked enhancement in the Seebeck coefficient S along with concomitant suppression of the electrical resistivity ρ was observed in Se-substituted single crystals. An overall enhancement of the thermoelectric figure of merit ( zT) by a factor of 310 was observed in single-crystal Fe0.05In1.95(Te0.90Se0.10)5 compared with single crystals of the parent material In2Te5.

  12. Rational synthesis of ultrathin n-type Bi2Te3 nanowires with enhanced thermoelectric properties.

    PubMed

    Zhang, Genqiang; Kirk, Benjamin; Jauregui, Luis A; Yang, Haoran; Xu, Xianfan; Chen, Yong P; Wu, Yue

    2012-01-11

    A rational yet scalable solution phase method has been established, for the first time, to obtain n-type Bi(2)Te(3) ultrathin nanowires with an average diameter of 8 nm in high yield (up to 93%). Thermoelectric properties of bulk pellets fabricated by compressing the nanowire powder through spark plasma sintering have been investigated. Compared to the current commercial n-type Bi(2)Te(3)-based bulk materials, our nanowire devices exhibit an enhanced ZT of 0.96 peaked at 380 K due to a significant reduction of thermal conductivity derived from phonon scattering at the nanoscale interfaces in the bulk pellets, which corresponds to a 13% enhancement compared to that of the best n-type commercial Bi(2)Te(2.7)Se(0.3) single crystals (~0.85) and is comparable to the best reported result of n-type Bi(2)Te(2.7)Se(0.3) sample (ZT = 1.04) fabricated by the hot pressing of ball-milled powder. The uniformity and high yield of the nanowires provide a promising route to make significant contributions to the manufacture of nanotechnology-based thermoelectric power generation and solid-state cooling devices with superior performance in a reliable and a reproducible way.

  13. Electronic and thermoelectric properties of few-layer transition metal dichalcogenides

    SciTech Connect

    Wickramaratne, Darshana; Lake, Roger K.; Zahid, Ferdows

    2014-03-28

    The electronic and thermoelectric properties of one to four monolayers of MoS{sub 2}, MoSe{sub 2}, WS{sub 2}, and WSe{sub 2} are calculated. For few layer thicknesses, the near degeneracies of the conduction band K and Σ valleys and the valence band Γ and K valleys enhance the n-type and p-type thermoelectric performance. The interlayer hybridization and energy level splitting determine how the number of modes within k{sub B}T of a valley minimum changes with layer thickness. In all cases, the maximum ZT coincides with the greatest near-degeneracy within k{sub B}T of the band edge that results in the sharpest turn-on of the density of modes. The thickness at which this maximum occurs is, in general, not a monolayer. The transition from few layers to bulk is discussed. Effective masses, energy gaps, power-factors, and ZT values are tabulated for all materials and layer thicknesses.

  14. Thermoelectric properties of AgSbTe2 from first-principles calculations

    NASA Astrophysics Data System (ADS)

    Akbarzadeh, Hadi; Rezaei, Nafiseh; Hashemifar, S.; Esfarjani, Keivan

    2013-03-01

    Recently, novel thermoelectric materials are extensively investigated for providing sustainable energy resource. In this regard, AgSbTe2 as a p-type semiconductor is widely investigated due to its low lattice thermal conductivity and relatively large Seebeck coefficient. We study electronic, vibrational, and thermoelectric properties of FCC and rhombohedral structures of AgSbTe2 by first-principles calculations. The hybrid HSE03 functional is employed to correct wrong prediction of semimetal behavior in GGA and obtain a band gap of about 0.5 eV. The Seebeck coefficient, electrical conductivity, and electronic part of thermal conductivity are calculated by using a combination of maximally localized Wannier functions and semi-classical Boltzmann equation. By matching the calculated Seebeck coefficient with the experimental data, we predict the carrier concentration and band gap of several experimental samples. Our results indicate that the band gap and hole concentration of pure samples should be in the range of 0.2-0.5 eV and 2-5 × 1019 holes/cm3. Finally, we use the experimental electrical conductivity and the constant relaxation time assumption to estimate the relaxation time of this compound. This work was supported jointly by the Vice Chancellor for Research Affairs of Isfahan University of Technology, Center of Excellence for Applied Nanotechnology, and ICTP Affiliated Centre

  15. Thermoelectric properties of silicon carbide nanowires with nitride dopants and vacancies

    NASA Astrophysics Data System (ADS)

    Xu, Zhuo; Zheng, Qing-Rong; Su, Gang

    2011-12-01

    The thermoelectric properties of cubic zinc-blend silicon carbide nanowires (SiCNWs) with nitrogen impurities and vacancies along [111] direction are theoretically studied by means of atomistic simulations. It is found that the thermoelectric figure of merit ZT of SiCNWs can be significantly enhanced by doping N impurities together with making Si vacancies. Aiming at obtaining a large ZT, we study possible energetically stable configurations, and disclose that, when N dopants are located at the center, a small number of Si vacancies at corners are most favored for n-type nanowires, while a large number of Si vacancies spreading into the flat edge sites are most favored for p-type nanowires. For the SiCNW with a diameter of 1.1 nm and a length of 4.6 nm, the ZT value for the n-type is shown capable of reaching 1.78 at 900 K. The conditions to get higher ZT values for longer SiCNWs are also addressed.

  16. Thermoelectric properties of Cu-dispersed bi0.5sb1.5te3

    PubMed Central

    2012-01-01

    A novel and simple approach was used to disperse Cu nanoparticles uniformly in the Bi0.5Sb1.5Te3 matrix, and the thermoelectric properties were evaluated for the Cu-dispersed Bi0.5Sb1.5Te3. Polycrystalline Bi0.5Sb1.5Te3 powder prepared by encapsulated melting and grinding was dry-mixed with Cu(OAc)2 powder. After Cu(OAc)2 decomposition, the Cu-dispersed Bi0.5Sb1.5Te3 was hot-pressed. Cu nanoparticles were well-dispersed in the Bi0.5Sb1.5Te3 matrix and acted as effective phonon scattering centers. The electrical conductivity increased systematically with increasing level of Cu nanoparticle dispersion. All specimens had a positive Seebeck coefficient, which confirmed that the electrical charge was transported mainly by holes. The thermoelectric figure of merit was enhanced remarkably over a wide temperature range of 323-523 K. PACS: 72.15.Jf: 72.20.Pa PMID:22221588

  17. Electrochemical Treatment for Effectively Tuning Thermoelectric Properties of Free-Standing Poly(3-methylthiophene) Films.

    PubMed

    Hu, Yongjing; Zhu, Danhua; Zhu, Zhengyou; Liu, Endou; Lu, Baoyang; Xu, Jingkun; Zhao, Feng; Hou, Jian; Liu, Huixuan; Jiang, Fengxing

    2016-07-18

    The degree of oxidation of conducting polymers has great influence on their thermoelectric properties. Free-standing poly(3-methylthiophene) (P3MeT) films were prepared by electrochemical polymerization in boron trifluoride diethyl etherate, and the fresh films were treated electrochemically with a solution of propylene carbonate/lithium perchlorate as mediator. The conductivity of the resultant P3MeT films depends on the doping level, which is controlled by a constant potential from -0.5 to 1.4 V. The optimum electrical conductivity (78.9 S cm(-1) at 0.5 V) and a significant increase in the Seebeck coefficient (64.3 μV K(-1) at -0.5 V) are important for achieving an optimum power factor at an optimal potential. The power factor of electrochemically treated P3MeT films reached its maximum value of 4.03 μW m(-1)  K(-2) at 0.5 V. Moreover, after two months, it still exhibited a value of 3.75 μW m(-1)  K(-2) , and thus was more stable than pristine P3MeT due to exchange of doping ions in films under ambient conditions. This electrochemical treatment is a significant alternative method for optimizing the thermoelectric power factor of conducting polymer films. PMID:27062329

  18. Improved thermoelectric property of cation-substituted CaMnO3

    NASA Astrophysics Data System (ADS)

    Kumar, Pradeep; Kashyap Subhash, C.; Sharma Vijay, Kumar; Gupta, H. C.

    2015-09-01

    Single-phase pristine and cation-substituted calcium manganite (Ca1-xBixMn1-yVyO3-δ) polycrystalline samples were synthesized by the solid state reaction technique. Their thermoelectric properties were measured by a set up that was designed and assembled in the laboratory. The Ca1-xBixMn1-yVyO3-δ sample with x = y = 0.04 has shown a power factor (S2σ) of 176 μW/m/K2 at 423 K, which is nearly two orders of magnitude higher than that of the pristine sample (2.1 μW/m/K2). The power factor of the substituted oxide remains almost temperature independent as the Seebeck coefficient increases monotonically with temperature, along with the simultaneous decrease in electrical resistivity which is attributed to enhanced electron density due to co-doping of bismuth and vanadium and grain boundary scattering. These cation-substituted calcium manganites can be used as a potential candidate for an n-type leg in a thermoelectric generator (module).

  19. Improvement in Thermoelectric Properties by Tailoring at In and Te Site in In2Te5

    NASA Astrophysics Data System (ADS)

    Sanchela, Anup V.; Thakur, Ajay D.; Tomy, C. V.

    2016-07-01

    We study the role of substitutions at In and Te site in the thermoelectric behavior of In2Te5. Single crystals with compositions In2(Te1-x Se x )5 (x = 0, 0.05, 0.10) and Fe0.05In1.95(Te0.90Se0.10)5 were prepared using a modified Bridgman-Stockbarger technique. Electrical and thermal transport properties of these single crystals were measured in the temperature range of 6 K to 395 K. A substantial decrease in the thermal conductivity was observed in Fe-substituted samples, attributed to enhanced phonon scattering at point defects. Marked enhancement in the Seebeck coefficient S along with concomitant suppression of the electrical resistivity ρ was observed in Se-substituted single crystals. An overall enhancement of the thermoelectric figure of merit (zT) by a factor of 310 was observed in single-crystal Fe0.05In1.95(Te0.90Se0.10)5 compared with single crystals of the parent material In2Te5.

  20. Thermoelectric properties of semiconductor-metal composites produced by particle blending

    NASA Astrophysics Data System (ADS)

    Liu, Yu; Cadavid, Doris; Ibáñez, Maria; Ortega, Silvia; Martí-Sánchez, Sara; Dobrozhan, Oleksandr; Kovalenko, Maksym V.; Arbiol, Jordi; Cabot, Andreu

    2016-10-01

    In the quest for more efficient thermoelectric material able to convert thermal to electrical energy and vice versa, composites that combine a semiconductor host having a large Seebeck coefficient with metal nanodomains that provide phonon scattering and free charge carriers are particularly appealing. Here, we present our experimental results on the thermal and electrical transport properties of PbS-metal composites produced by a versatile particle blending procedure, and where the metal work function allows injecting electrons to the intrinsic PbS host. We compare the thermoelectric performance of composites with microcrystalline or nanocrystalline structures. The electrical conductivity of the microcrystalline host can be increased several orders of magnitude with the metal inclusion, while relatively high Seebeck coefficient can be simultaneously conserved. On the other hand, in nanostructured materials, the host crystallites are not able to sustain a band bending at its interface with the metal, becoming flooded with electrons. This translates into even higher electrical conductivities than the microcrystalline material, but at the expense of lower Seebeck coefficient values.

  1. A Theoretical Model of Thermoelectric Transport Properties for Electrons and Phonons

    NASA Astrophysics Data System (ADS)

    Lee, HoSung

    2016-02-01

    A generic theoretical model for five bulk thermoelectric materials (PbTe, Bi2Te3, SnSe, Si0.7Ge0.3, and Mg2Si) has been developed based on the semiclassical model incorporating nonparabolicity, the two-band Kane model, the Hall factor, and the Debye-Callaway model for electrons and phonons. It is used to calculate thermoelectric transport properties, viz. the Seebeck coefficient, electrical conductivity, and electronic and lattice thermal conductivities, in the temperature range from room temperature up to 1200 K. The present model differs from others in the following regards: Firstly, thorough verification of modified electron scattering mechanisms is carried out by comparison with reported experimental data; Secondly, extensive verification of the model is presented, with concomitant agreement between calculations and reported measurements of effective masses, electron and hole concentrations, Seebeck coefficient, electrical conductivity, and electronic and lattice thermal conductivities; Thirdly, the present model provides the Fermi energy as a function of temperature and doping concentration; Fourthly, the velocities of sound are calculated using the Debye model rather than taken from literature. After verification of the present model, we were able to examine the recently attractive material SnSe, indicating a significant improvement in the dimensionless figure of merit.

  2. Beneficial influence of Ru on the thermoelectric properties of Mo{sub 3}Sb{sub 7}

    SciTech Connect

    Candolfi, Christophe; Lenoir, Bertrand; Leszczynski, Juliusz; Dauscher, Anne; Guilmeau, Emmanuel

    2009-04-15

    Zintl phases have recently been identified as potential thermoelectric materials typified by the discovery of a high thermoelectric figure of merit in the Yb{sub 14}MnSb{sub 11} compound above 1000 K. We report on the synthesis and the thermoelectric properties measurements over a wide temperature range (300-1000 K) of other Zintl phases exhibiting a complex crystalline structure, namely, Mo{sub 3}Sb{sub 7} and its related compounds Mo{sub 3-x}Ru{sub x}Sb{sub 7}. While the binary compound displays low figure of merit values due to its metallic nature, we show that the partial substitution of Mo by Ru significantly improves its value to reach 0.45 at 1000 K in Mo{sub 2.2}Ru{sub 0.8}Sb{sub 7}.

  3. Optical and thermoelectric properties of Tl-filled CoSb3 skutterudites from first-principles

    NASA Astrophysics Data System (ADS)

    Gee Kim, In; Freeman, Arthur J.

    2006-03-01

    Filled skutterudite antimonides have attracted much interest as a new class of thermoelectric materials. We have determined the electronic structures, optical and thermoelectric propertes of Tl-filled skutterudite CoSb3 by using the highly precise full-potential linearized augmented plane wave (FLAPW) method within the Perdew-Burke-Ernzerhof (PBE) form of the generalized gradient approximation (GGA) to density functional theory. In contrast to the small-gap semiconducting CoSb3, Tl-filled CoSb3 is calculated to be metallic with Tl-sp bands stongly hybridized with all the other elements over the entire energy region. The thermoelectric properties, e.g. the Seebeck coefficient, are evaluated and discussed in terms of the diagonal terms of the optical matrix elements. B.C. Sales, D. Mandrus, and R. K. Williams, Science 272, 1325 (1996). Wimmer, Weinert, Krakauer, Freeman, Phys. Rev. B 24, 864 (1981). Perdew, Burke, Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996).

  4. High performance thermoelectric materials and methods of preparation

    NASA Technical Reports Server (NTRS)

    Fleurial, Jean-Pierre (Inventor); Caillat, Thierry F. (Inventor); Borshchevsky, Alexander (Inventor)

    1997-01-01

    Transition metals (T) of Group VIII (Co, Rh and Ir) have been prepared as semiconductor alloys with Sb having the general formula TSb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor alloys and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor alloys having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freeze techniques, liquid-solid phase sintering techniques, low temperature powder sintering and/or hot-pressing. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities (up to 8000 cm.sup.2.V.sup.-1.s.sup.-1), good Seebeck coefficients (up to 400 .mu.VK.sup.-1 between 300.degree. C. and 700.degree. C.), and low thermal conductivities (as low as 15 mW/cmK). Optimizing the transport properties of semiconductor materials prepared from elemental mixtures Co, Rh, Ir and Sb resulted in a two fold increase in the thermoelectric figure of merit (ZT) at temperatures as high as 400.degree. C. for thermoelectric elements fabricated from such semiconductor materials.

  5. Sensors for low temperature application

    DOEpatents

    Henderson, Timothy M.; Wuttke, Gilbert H.

    1977-01-01

    A method and apparatus for low temperature sensing which uses gas filled micro-size hollow glass spheres that are exposed in a confined observation area to a low temperature range (Kelvin) and observed microscopically to determine change of state, i.e., change from gaseous state of the contained gas to condensed state. By suitable indicia and classification of the spheres in the observation area, the temperature can be determined very accurately.

  6. Filled Co (sub X) Ni (sub 4-x) Sb (sub 12-y) Sn (sub Y) Skutterudites: Processing and Thermoelectric Properties

    NASA Technical Reports Server (NTRS)

    Mackey, Jon; Sehirlioglu, Alp; Dynys, Fred

    2015-01-01

    Skutterudites have proven to be a useful thermoelectric system as a result of their enhanced figure of merit (ZT1), cheap material cost, favorable mechanical properties, and good thermal stability. The majority of skutterudite interest in recent years has been focused on binary skutterudites like CoSb3 or CoAs3. Binary skutterudites are often double and triple filled, with a range of elements from the lanthanide series, in order to reduce the lattice component of thermal conductivity. Ternary and quaternary skutterudites, such as Co4Ge6Se6 or Ni4Sb8Sn4, provide additional paths to tune the electronic structure. The thermal conductivity can further be improved in these complex skutterudites by the introduction of fillers. The Co (sub X) Ni (sub 4-x) Sb (sub 12-y) Sn (sub Y) system has been investigated as both a p- and n-type thermoelectric material, and is stable up to 200 degrees Centigrade. Yb, Ce, and Dy fillers have been introduced into the skutterudite to study the influence of both the type and the quantity of fillers on processing conditions and thermoelectric properties. The system was processed through a multi-step technique that includes solidification, mechano-chemical alloying, and hot pressing which will be discussed along with thermoelectric transport properties.

  7. Ion beam irradiation effect on thermoelectric properties of Bi2Te3 and Sb2Te3 thin films

    NASA Astrophysics Data System (ADS)

    Fu, Gaosheng; Zuo, Lei; Lian, Jie; Wang, Yongqiang; Chen, Jie; Longtin, Jon; Xiao, Zhigang

    2015-09-01

    Thermoelectric energy harvesting is a very promising application in nuclear power plants for self-maintained wireless sensors. However, the effects of intensive radiation on the performance of thermoelectric materials under relevant reactor environments such as energetic neutrons are not fully understood. In this work, radiation effects of bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) thermoelectric thin film samples prepared by E-beam evaporation are investigated using Ne2+ ion irradiations at different fluences of 5 × 1014, 1015, 5 × 1015 and 1016 ions/cm2 with the focus on the transport and structural properties. Electrical conductivities, Seebeck coefficients and power factors are characterized as ion fluence changes. X-ray diffraction (XRD) and transmission electron microscopy (TEM) of the samples are obtained to assess how phase and microstructure influence the transport properties. Carrier concentration and Hall mobility are obtained from Hall effect measurements, which provide further insight into the electrical conductivity and Seebeck coefficient mechanisms. Positive effects of ion irradiations from Ne2+ on thermoelectric material property are observed to increase the power factor to 208% for Bi2Te3 and 337% for Sb2Te3 materials between fluence of 1 and 5 × 1015 cm2, due to the increasing of the electrical conductivity as a result of ionization radiation-enhanced crystallinity. However, under a higher fluence, 5 × 1015 cm2 in this case, the power factor starts to decrease accordingly, limiting the enhancements of thermoelectric materials properties under intensive radiation environment.

  8. Thermoelectric properties of SnO2-based ceramics doped with Nd, Hf or Bi

    NASA Astrophysics Data System (ADS)

    Yanagiya, S.; Nong, N. V.; Sonne, M.; Pryds, N.

    2012-06-01

    We report the thermoelectric properties of Nd-, Hf-or Bi-doped SnO2-based ceramics prepared by solid-state sintering. Polycrystalline SnO2-based samples (Sn0.97Sb0.01Zn0.01M0.01O2, M = Nd, Hf or Bi) were prepared by solid-state reactions. We confirmed that Bi-doping increased the power factor due to both the enhanced electrical conductivity and Seebeck coefficient compared to the matrix material. The maximum power factor of 4.8 × 10-4 Wm-1K-2 was attained for the Bi-doped sample at 1060 K.

  9. Fabrication of Cu-Doped Bi2Te3 Nanoplates and Their Thermoelectric Properties

    NASA Astrophysics Data System (ADS)

    Liu, Shuai; Peng, Nan; Bai, Yu; Ma, Dayan; Ma, Fei; Xu, Kewei

    2016-09-01

    Cu-doped Bi2Te3 hexagonal nanoplates were fabricated by a simple solvothermal method. Scanning electron microscopy and transmission electron microscopy characterization illustrated that the nanoplates are single-crystal ones with an average width of 300 nm and thickness in the range of 20-30 nm. It was demonstrated that Cu x Bi2Te3 nanoplates possess the lowest thermal conductivity (0.8-1.2 W/m K) at 300 K, which is mainly due to the enhanced phonon scattering by grain boundaries. Furthermore, the doped Cu could evidently enhance the power factor of Bi2Te3 through optimizing the carrier transport properties. As a result, Cu0.02Bi2Te3 nanoplates exhibit the best thermoelectric performance with a figure of merit of 0.33, which is more than two times higher than that of Bi2Te3 nanoplates.

  10. Thermoelectric properties of semimetallic (Zr, Hf)CoSb half-Heusler phases

    NASA Astrophysics Data System (ADS)

    Xia, Y.; Bhattacharya, S.; Ponnambalam, V.; Pope, A. L.; Poon, S. J.; Tritt, T. M.

    2000-08-01

    Unlike semiconducting TiCoSb, ZrCoSb and HfCoSb half-Heusler phases are semimetallic below room temperature and exhibit small Seebeck coefficients of ˜-10 μV/K at 300 K. However, upon substituting (doping) the Co and Sb sites with Pt and Sn, respectively, much larger thermopowers (S) are obtained. For ZrCoSb, S reaches -110 and +130 μV/K while resistivity ρ decreases from ˜5×104 μΩ cm in the undoped phase to 1-2×103 μΩ cm in the substituted phases at 300 K. The lowest thermal conductivity obtained in the substituted alloys is ˜3.0 W/m K at 300 K, which is among the lowest reported for this class of structural phases. There are indications that the thermoelectric properties have not been optimized in these multinary alloys.

  11. Thermoelectric properties of indium doped PbTe{sub 1-y}Se{sub y} alloys

    SciTech Connect

    Bali, Ashoka; Mallik, Ramesh Chandra; Wang, Heng; Snyder, G. Jeffrey

    2014-07-21

    Lead telluride and its alloys are well known for their thermoelectric applications. Here, a systematic study of PbTe{sub 1-y}Se{sub y} alloys doped with indium has been done. The powder X-Ray diffraction combined with Rietveld analysis confirmed the polycrystalline single phase nature of the samples, while microstructural analysis with scanning electron microscope results showed densification of samples and presence of micrometer sized particles. The temperature dependent transport properties showed that in these alloys, indium neither pinned the Fermi level as it does in PbTe, nor acted as a resonant dopant as in SnTe. At high temperatures, bipolar effect was observed which restricted the zT to 0.66 at 800 K for the sample with 30% Se content.

  12. Parallel syntheses and thermoelectric properties of Ce-doped SrTiO 3 thin films

    NASA Astrophysics Data System (ADS)

    Yamada, Y. F.; Ohtomo, A.; Kawasaki, M.

    2007-11-01

    Thermoelectric properties of single crystalline Ce xSr 1- xTiO 3 films (0 ≤ x ≤ 0.5) have been studied by using combinatorial pulsed-laser deposition. Temperature gradient method was used for identifying an optimum growth temperature for SrTiO 3 homoepitaxial growth, at which both oxygen stoichiometry and persisting layer-by-layer growth mode could be accomplished. Electrical conductivity ( σ) and Seebeck coefficient ( S) were measured at room temperature for the composition-spread films grown at the optimized temperature and found to be considerably higher than those reported for bulk poly-crystalline compounds. Hall measurement revealed that carrier density linearly increased with increasing x, suggesting that a trivalent Ce ions substituted divalent Sr ions to supply electrons. A maximum power factor ( S2σ) was obtained for the x = 0.2 film, being 7 and 14 μW/K 2 cm at 300 and 900 K, respectively.

  13. Thermoelectric properties of molten Bi2Te3, CuI, and AgI

    NASA Astrophysics Data System (ADS)

    Nishikawa, Kazutaka; Takeda, Yasuhiko; Motohiro, Tomoyoshi

    2013-01-01

    To achieve large figure of merit (ZT) and superior thermal durability at high temperatures, we have investigated thermoelectric properties of molten Bi2Te3, CuI, and AgI up to 1173 K. Molten Bi2Te3 was found to have large electrical conductivity between 1800 and 2000 (Ω ṡ cm)-1. Molten CuI and AgI, however, exhibited small electrical conductivity less than 1 (Ω ṡ cm)-1, nevertheless they show very large Seebeck coefficients over 800 μV/K. We estimated thermal conductivity using Wiedemann Franz law and the model established by Regel et al. [Phys. Status Solidi A 5, 13 (1971)]. The evaluated ZT for CuI is over 0.1.

  14. Temperature dependent thermoelectric property of reduced graphene oxide-polyaniline composite

    NASA Astrophysics Data System (ADS)

    Mitra, Mousumi; Banerjee, Dipali; Kargupta, Kajari; Ganguly, Saibal

    2016-05-01

    A composite material of reduced graphene oxide (rG) nanosheets with polyaniline (PANI) protonated by 5-sulfosalicylic acid has been synthesized via in situ oxidative polymerization method. The morphological and spectral characterizations have been done using FESEM and XRD measurements. The thermoelectric (TE) properties of the reduced graphene oxide-polyaniline composite (rG-P) has been studied in the temperature range from 300-400 K. The electrical conductivity and the Seebeck coefficient of rG-P is higher than the of pure PANI, while the thermal conductivity of the composite still keeps much low value ensuing an increase in the dimensionless figure of merit (ZT) in the whole temperature range.

  15. Modeling a Thermoelectric Generator Applied to Diesel Automotive Heat Recovery

    NASA Astrophysics Data System (ADS)

    Espinosa, N.; Lazard, M.; Aixala, L.; Scherrer, H.

    2010-09-01

    Thermoelectric generators (TEGs) are outstanding devices for automotive waste heat recovery. Their packaging, lack of moving parts, and direct heat to electrical conversion are the main benefits. Usually, TEGs are modeled with a constant hot-source temperature. However, energy in exhaust gases is limited, thus leading to a temperature decrease as heat is recovered. Therefore thermoelectric properties change along the TEG, affecting performance. A thermoelectric generator composed of Mg2Si/Zn4Sb3 for high temperatures followed by Bi2Te3 for low temperatures has been modeled using engineering equation solver (EES) software. The model uses the finite-difference method with a strip-fins convective heat transfer coefficient. It has been validated on a commercial module with well-known properties. The thermoelectric connection and the number of thermoelements have been addressed as well as the optimum proportion of high-temperature material for a given thermoelectric heat exchanger. TEG output power has been estimated for a typical commercial vehicle at 90°C coolant temperature.

  16. Al insertion and additive effects on the thermoelectric properties of yttrium boride

    SciTech Connect

    Maruyama, Satofumi; Prytuliak, Anastasiia; Miyazaki, Yuzuru; Hayashi, Kei; Kajitani, Tsuyoshi; Mori, Takao

    2014-03-28

    The aluminoboride Y{sub x}Al{sub y}B{sub 14} (x ∼ 0.57, 0.41 ≤ y ≤ 0.63) has been found to show striking p-n control of the thermoelectric properties through variations of the y occupancy of the Al site. The effect of Al was investigated in further extremes. Polycrystalline samples of Al-free Y{sub x}B{sub 14}(x ∼ 0.55; “YB{sub 25}”) were successfully synthesized in sufficient amounts for bulk spark plasma sintering (SPS) samples and their thermoelectric properties were investigated. Y{sub 0.56}Al{sub 0.57}B{sub 14} was also prepared in comparison, and further Al was added to the samples through SPS treatment. We observed that Y{sub 0.55}B{sub 14} exhibits large positive Seebeck coefficients, ∼1000 μV K{sup −1}, around room temperature and the absolute value of the Seebeck coefficient largely decreases with increase of temperature while that of Y{sub 0.56}Al{sub 0.57}B{sub 14} is proportional to T{sup −1/2}, indicating a strong effect of Al on the electronic structure around the Fermi level. Y{sub 0.55}B{sub 14} was found to be strongly disordered with a relatively low thermal conductivity and short localization length of 0.65 Å which is close to that previously determined for the disordered and thermally glass-like compound YB{sub 66}. Occupancy of Al could not be increased further for the Al-rich sample, although Al was discovered to act as a sintering aid to enhance density and ZT could be significantly improved by 50%.

  17. The Effect of Structural Vacancies on the Thermoelectric Properties of (Cu2Te)1-x(Ga2Te3)x

    SciTech Connect

    Ye, Zuxin; Cho, Jung Y; Tessema, Misle; Salvador, James R.; Waldo, Richard; Wang, Hsin; Cai, Wei

    2013-01-01

    We have studied the effects of structural vacancies on the thermoelectric properties of the ternary compounds (Cu2Te)1-x(Ga2Te3)x (x = 0.5, 0.55, 0.571, 0.6, 0.625, 0.667 and 0.75), which are solid solutions found in the pseudo-binary phase diagram for Cu2Te and Ga2Te3. This system possesses tunable structural vacancy concentrations. The x= 0.5 phase, CuGaTe2, is nominally devoid of structural vacancies, while the rest of the compounds contain varying amounts of these features, and the volume density of vacancies increases with Ga2Te3 content. The sample with x = 0.5, 0.55, 0.571, 0.6, 0.625 crystallize in the chalcopyrite structure while the x = 0.667 and 0.75 adopt the Ga2Te3 defect zinc blende structure. Strong scattering of heat carrying phonons by structural defects, leads to the reduction of thermal conductivity, which is beneficial to the thermoelectric performance of materials. On the other hand, these defects also scatter charge carriers and reduce the electrical conductivity. All the samples investigated are p-type semiconductors as inferred by the signs of their respective Hall (RH) and Seebeck (S) coefficients. The structural vacancies were found to scatter phonons strongly, while a combination of increased carrier concentration, and vacancies decreases the Hall mobility ( H), degrading the overall thermoelectric performance. The room temperature H drops from 90 cm2/V s for CuGaTe2 to 13 cm2/V s in Cu9Ga11Te21 and 4.6 cm2/V s in CuGa3Te5. The low temperature thermal conductivity decreases significantly with higher Ga2Te3 concentrations (higher vacancy concentration) due to increased point defect scattering which dominate thermal resistance terms. At high temperatures, the dependence of thermal conductivity on the Ga2Te3 content is less significant. The presence of strong Umklapp scattering leads to low thermal conductivity at high temperatures for all samples investigated. The highest ZT among the samples in this study was found for the defect-free Cu

  18. Co(x)Ni(4-x)Sb(12-y)Sn(y) Ternary Skutterudites: Processing and Thermoelectric Properties

    NASA Technical Reports Server (NTRS)

    Mackey, Jon; Sehirlioglu, Alp; Dynys, Fred

    2014-01-01

    Skutterudites have proven to be a useful thermoelectric system as a result of their high figure of merit, favorable mechanical properties, and good thermal stability. Binary skutterudites have received the majority of interest in recent years, as a result of successful double and triple filling schemes. Ternary skutterudites, such as Ni4Sb7Sn5, also demonstrate good thermoelectric performance, with high power factor and low thermal conductivity. Ternary skutterudites, as contrasted to binary systems, provide more possibility for tuning electronic structure as substitutions can be studied on three elements. The Co(x)Ni(4-x)Sb(12-y)Sn(y) system has been investigated as both a p- and n-type thermoelectric material, stable up to 200 C. The system is processed through a combination of solidification, mechanical alloying, and hot pressing steps. Rietveld structure refinement has revealed an interesting occupancy of Sn on both the 24g Wyckoff position with Sb as well as the 2a position as a rattler. In addition to thermoelectric properties, detailed processing routes have been investigated on the system.

  19. Thermoelectric Properties of the α-As2Te3 Crystalline Phase

    NASA Astrophysics Data System (ADS)

    Vaney, J.-B.; Carreaud, J.; Delaizir, G.; Morin, C.; Monnier, J.; Alleno, E.; Piarristeguy, A.; Pradel, A.; Gonçalves, A. P.; Lopes, E. B.; Candolfi, C.; Dauscher, A.; Lenoir, B.

    2016-03-01

    As2Te3 exists in two crystallographic configurations: α- and β-As2Te3, of which only the latter crystallizes in the same rhombohedral structure-type as Bi2Te3. While β-As2Te3 shows interesting thermoelectric (TE) properties which can be adjusted through alloying, the transport properties of the monoclinic phase α-As2Te3, more thermodynamically stable than the β-phase at room temperature, has not yet been studied thoroughly. We report here on the samples preparation by powder metallurgy, and on the microstructural characterization of polycrystalline α-As2Te3. Preliminary results on the electrical and thermal properties measured between 5 K and 523 K are also reported. Transport properties measurements were performed both along and perpendicular to the pressing direction indicating that the transport properties demonstrate some degree of anisotropy. Remarkably, low thermal conductivity values (below 1 W m-1 K-1 above 300 K) were measured suggesting that this compound may be an interesting platform to design novel TE materials with high efficiency.

  20. Low-temperature tracking detectors

    NASA Astrophysics Data System (ADS)

    Niinikoski, T. O.; Abreu, M.; Anbinderis, P.; Anbinderis, T.; D'Ambrosio, N.; de Boer, W.; Borchi, E.; Borer, K.; Bruzzi, M.; Buontempo, S.; Chen, W.; Cindro, V.; Dezillie, B.; Dierlamm, A.; Eremin, V.; Gaubas, E.; Gorbatenko, V.; Granata, V.; Grigoriev, E.; Grohmann, S.; Hauler, F.; Heijne, E.; Heising, S.; Hempel, O.; Herzog, R.; Härkönen, J.; Ilyashenko, I.; Janos, S.; Jungermann, L.; Kalesinskas, V.; Kapturauskas, J.; Laiho, R.; Li, Z.; Luukka, P.; Mandic, I.; De Masi, R.; Menichelli, D.; Mikuz, M.; Militaru, O.; Nuessle, G.; O'Shea, V.; Pagano, S.; Paul, S.; Perea Solano, B.; Piotrzkowski, K.; Pirollo, S.; Pretzl, K.; Rahman, M.; Rato Mendes, P.; Rouby, X.; Ruggiero, G.; Smith, K.; Sousa, P.; Tuominen, E.; Tuovinen, E.; Vaitkus, J.; Verbitskaya, E.; da Viá, C.; Vlasenko, L.; Vlasenko, M.; Wobst, E.; Zavrtanik, M.; CERN RD39 Collaboration

    2004-03-01

    RD39 collaboration develops new detector techniques for particle trackers, which have to withstand fluences up to 1016 cm-2 of high-energy particles. The work focuses on the optimization of silicon detectors and their readout electronics while keeping the temperature as a free parameter. Our results so far suggest that the best operating temperature is around 130 K. We shall also describe in this paper how the current-injected mode of operation reduces the polarization of the bulk silicon at low temperatures, and how the engineering and materials problems related with vacuum and low temperature can be solved.

  1. Acido-basic control of the thermoelectric properties of poly(3,4-ethylenedioxythiophene)tosylate (PEDOT-Tos) thin films

    PubMed Central

    Khan, Zia Ullah; Bubnova, Olga; Jafari, Mohammad Javad; Brooke, Robert; Liu, Xianjie; Gabrielsson, Roger; Ederth, Thomas; Evans, Drew R.; Andreasen, Jens W.; Fahlman, Mats

    2015-01-01

    PEDOT-Tos is one of the conducting polymers that displays the most promising thermoelectric properties. Until now, it has been utterly difficult to control all the synthesis parameters and the morphology governing the thermoelectric properties. To improve our understanding of this material, we study the variation in the thermoelectric properties by a simple acido-basic treatment. The emphasis of this study is to elucidate the chemical changes induced by acid (HCl) or base (NaOH) treatment in PEDOT-Tos thin films using various spectroscopic and structural techniques. We could identify changes in the nanoscale morphology due to anion exchange between tosylate and Cl– or OH–. But, we identified that changing the pH leads to a tuning of the oxidation level of the polymer, which can explain the changes in thermoelectric properties. Hence, a simple acid–base treatment allows finding the optimum for the power factor in PEDOT-Tos thin films. PMID:27019715

  2. First-Principles Study of Thermoelectric Properties of Covalent Organic Frameworks

    NASA Astrophysics Data System (ADS)

    Chumakov, Yurii; Aksakal, Fatma; Dimoglo, Anatholy; Ata, Ali; Palomares-Sánchez, Salvador A.

    2016-07-01

    Covalent organic frameworks (COFs) are new emerging functional porous materials. Strong covalent bonds result in molecular building blocks that can be arranged in layered two-dimensional (2D) or three-dimensional (3D) periodic networks. However, to the best of our knowledge, there have been no reports on experimental and theoretical studies of thermoelectrical properties of COFs to date. Therefore, density functional theory (DFT) and the Boltzmann transport equation have been applied in this work to calculate the semiclassical transport coefficients for phthalocyanine (Pc)-based NiPc, NiPc-benzothiadiazole (BTDA), and Pc COFs. Owing to the well-ordered stacking of the phthalocyanine units and linkers in these compounds, charge-carrier transport is facilitated in the stacking direction. In all studied compounds, the highly directional character of π-orbitals provides band-structure engineering and produces a type of low-dimensional hole transport along the stacking direction. All studied compounds are indirect semiconductors. The low-dimensional transport of holes and the localized states in both valence and conduction bands prevent the electron-hole compensation effect in the Seebeck coefficients, correlating with the large Seebeck coefficients of the studied compounds. Insertion of the electron-deficient building block benzothiadiazole in the NiPc-BTDA COF leads to positive Seebeck coefficients along the a-, b-, and c-directions. The relaxation time was estimated in our investigations from DFT band-structure calculations and the experimentally defined mobility, leading to determination of the electrical conductivity and electronic contribution to the thermal conductivity, as well as figure of merit ( ZT) estimation. Ni atom provided greater electrical conductivity along the c-direction in comparison with metal-free Pc COF, and NiPc COF showed the highest thermoelectric performance among the studied COFs.

  3. Theoretical Study of Electronic Structure and Thermoelectric Properties of Doped CuAlO2

    NASA Astrophysics Data System (ADS)

    Poopanya, P.; Yangthaisong, A.; Rattanapun, C.; Wichainchai, A.

    2011-05-01

    The doping level dependence of thermoelectric properties of delafossite CuAlO2 has been investigated in the constant scattering time ( τ) approximation, starting from the first principles of electronic structure. In particular, the lattice parameters and the energy band structure were calculated using the total energy plane-wave pseudopotential method. It was found that the lattice parameters of CuAlO2 are a = 2.802 Å and c = 16.704 Å, and the internal parameter is u = 0.1097. CuAlO2 has an indirect band gap of 2.17 eV and a direct gap of 3.31 eV. The calculated energy band structures were then used to calculate the electrical transport coefficients of CuAlO2. By considering the effects of doping level and temperature, it was found that the Seebeck coefficient S( T) increases with increasing acceptor doping ( A d) level. The values of S( T) in our experiments correspond to an A d level at 0.262 eV, which is identified as the Fermi level of CuAlO2. Based on our experimental Seebeck coefficient and the electrical conductivity, the constant relaxation time is estimated to be 1 × 10-16 s. The power factor is large for a low A d level and increases with temperature. It is suggested that delafossite CuAlO2 can be considered as a promising thermoelectric oxide material at high doping and high temperature.

  4. Low-temperature magnetic refrigerator

    DOEpatents

    Barclay, J.A.

    1983-05-26

    The invention relates to magnetic refrigeration and more particularly to low temperature refrigeration between about 4 and about 20 K, with an apparatus and method utilizing a belt of magnetic material passed in and out of a magnetic field with heat exchangers within and outside the field operably disposed to accomplish refrigeration.

  5. Low-temperature magnetic refrigerator

    DOEpatents

    Barclay, John A.

    1985-01-01

    The disclosure is directed to a low temperature 4 to 20 K. refrigeration apparatus and method utilizing a ring of magnetic material moving through a magnetic field. Heat exchange is accomplished in and out of the magnetic field to appropriately utilize the device to execute Carnot and Stirling cycles.

  6. Catalysts for low temperature oxidation

    DOEpatents

    Toops, Todd J.; Parks, III, James E.; Bauer, John C.

    2016-03-01

    The invention provides a composite catalyst containing a first component and a second component. The first component contains nanosized gold particles. The second component contains nanosized platinum group metals. The composite catalyst is useful for catalyzing the oxidation of carbon monoxide, hydrocarbons, oxides of nitrogen, and other pollutants at low temperatures.

  7. Structural and thermoelectric properties of zintl-phase CaLiPn (Pn=As, Sb, Bi)

    NASA Astrophysics Data System (ADS)

    Chandran, Anoop K.; Gudelli, Vijay Kumar; Sreeparvathy, P. C.; Kanchana, V.

    2016-11-01

    First-principles calculations were carried out to study the structural, mechanical, dynamical and transport properties of zintl phase materials CaLiPn (Pn=As, Sb and Bi). We have used two different approaches to solve the system based on density functional theory. The plane wave pseudopotential approach has been used to study the structural and dynamical properties whereas, full potential linear augment plane wave method is used to examine the electronic structure, mechanical and thermoelectric properties. The calculated ground-state properties agree quite well with experimental values. The computed electronic structure shows the investigated compounds to be direct band gap semiconductors. Further, we have calculated the thermoelectric properties of all the investigated compounds for both the carriers at various temperatures. We found a high thermopower for both the carriers, especially n-type doping to be more favourable, which enabled us to predict that CaLiPn might have promising applications as a good thermoelectric material. Further, the phonon dispersion curves of the investigated compounds showed flat phonon modes and we also find lower optical and acoustic modes to cut each other at the lower frequency range, which further indicate the investigated compounds to possess reasonably low thermal conductivity. We have also analysed the low value of the thermal conductivity through the empirical relations and discussions are presented here.

  8. Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100 °C) by Al2O3 incorporation

    NASA Astrophysics Data System (ADS)

    Park, Tae Joo; Byun, Youngchol; Wallace, Robert M.; Kim, Jiyoung

    2016-05-01

    The HfO2 films grown by atomic layer deposition (ALD) at a low temperature (100 °C) necessarily has a large amount of residual impurities due to lack of thermal energy for stable ALD reactions such as ligand removal and oxidation, which degrades various properties. However, Al2O3 incorporation into the film significantly decreased the residual impurities despite of a low growth temperature. The decrease in C impurity is attributed to the reduced oxygen vacancies by the incorporated Al2O3 phase or the high reactivity of Al precursor. Consequently, the electronic band structure of the film, and thereby the electrical properties were improved significantly.

  9. Thermoelectric properties of monolayer MSe2 (M = Zr, Hf): low lattice thermal conductivity and a promising figure of merit

    NASA Astrophysics Data System (ADS)

    Ding, Guangqian; Gao, G. Y.; Huang, Zhishuo; Zhang, Wenxu; Yao, Kailun

    2016-09-01

    Monolayer transition-metal dichalcogenides (TMDCs) MX2 (M = Mo, W, Zr, Hf, etc; X = S, Se, Te) have become well-known in recent times for their promising applications in thermoelectrics and field effect transistors. In this work, we perform a systematic study on the thermoelectric properties of monolayer ZrSe2 and HfSe2 using first-principles calculations combined with Boltzmann transport equations. Our results point to a competitive thermoelectric figure of merit (close to 1 at optimal doping) in both monolayer ZrSe2 and HfSe2, which is markedly higher than previous explored monolayer TMDCs such as MoS2 and MoSe2. We also reveal that the higher figure of merits arise mainly from their low lattice thermal conductivity, and this is partly due to the strong coupling of acoustic modes with low frequency optical modes. It is found that the figure of merits can be better optimized in n-type than in p-type. In particular, the performance of HfSe2 is superior to ZrSe2 at a higher temperature. Our results suggest that monolayer ZrSe2 and HfSe2 with lower lattice thermal conductivity than usual monolayer TMDCs are promising candidates for thermoelectric applications.

  10. Thermoelectric properties of antiperovskite calcium oxides Ca3PbO and Ca3SnO

    NASA Astrophysics Data System (ADS)

    Okamoto, Y.; Sakamaki, A.; Takenaka, K.

    2016-05-01

    We report the thermoelectric properties of polycrystalline samples of Ca3Pb1-xBixO (x = 0, 0.1, 0.2) and Ca3SnO, both crystallizing in a cubic antiperovskite-type structure. The Ca3SnO sample shows metallic resistivity and its thermoelectric power approaches 100 μV K-1 at room temperature, resulting in the thermoelectric power factor of Ca3SnO being larger than that of Ca3Pb1-xBixO. On the basis of Hall and Sommerfeld coefficients, the Ca3SnO sample is found to be a p-type metal with a carrier density of ˜1019 cm-3, a mobility of ˜80 cm2 V-1 s-1, both comparable to those in degenerated semiconductors, and a moderately large hole carrier effective mass. The coexistence of moderately high mobility and large effective mass observed in Ca3SnO, as well as possible emergence of a multivalley electronic structure with a small band gap at low-symmetry points in k-space, suggests that the antiperovskite Ca oxides have strong potential as a thermoelectric material.

  11. Thermoelectric properties optimization of Fe{sub 2}VGa by tuning electronic density of states via titanium doping

    SciTech Connect

    Wei, Pai-Chun E-mail: cheny2@phys.sinica.edu.tw; Huang, Ta-Sung; Chen, Yang-Yuan E-mail: cheny2@phys.sinica.edu.tw; Lin, Shu-Wei; Guo, Guang-Yu

    2015-10-28

    We report the correlation between thermoelectric properties and electronic band structure of thermoelectric Heusler alloy Fe{sub 2}V{sub 1-x}Ti{sub x}Ga by comparing experimental measurements with theoretical calculations. The electrical resistivity data show that the semiconducting-like behavior of pure Fe{sub 2}VGa is transformed to a more metallic-like behavior at x = 0.1. Meanwhile, an enhancement of the Seebeck coefficient was observed for all Ti doped specimens at elevated temperatures with a peak value of 57 μV/K for x = 0.05 at 300 K. The experimental results can be elucidated by the calculated band structure, i.e., a gradual shifting of the Fermi level from the middle of the pseudogap to the region of valence bands. With optimized doping, the thermoelectric power factor can be significantly enhanced to 3.95 mW m{sup −1} K{sup −2} at room temperature, which is comparable to the power factors of Bi{sub 2}Te{sub 3}-based compounds. The synergy of thermal conductivity reduction due to the alloying effect and the significant increase of the thermoelectric power factor leads to higher order zT values than that of prime Fe{sub 2}VGa.

  12. LOW TEMPERATURE CATHODE SUPPORTED ELECTROLYTES

    SciTech Connect

    Harlan U. Anderson; Wayne Huebner; Igor Kosacki

    2000-09-30

    This project has three main goals: Thin Films Studies, Preparation of Graded Porous Substrates and Basic Electrical Characterization and testing of Planar Single Cells. During this time period substantial progress has been made in developing low temperature deposition techniques to produce dense, nanocrystalline yttrium-stabilized zirconia films on both dense oxide and polymer substrates. Microstructural changes in unsupported nanocrystalline yttrium stabilized zirconia (ZrO{sub 2}:16%Y, or YSZ) thin films were examined as a function of temperature and annealing time in order to determine the grain growth exponent and the mechanisms of pinhole formation. Grain growth and pinhole formation were measured using high resolution transmission electron microscopy (HRTEM), normal imaging mode transmission electron microscopy (TEM), electron diffraction, and energy dispersive X-ray microanalysis (EDS). Grain growth was found to vary with a time exponent of about one half before pinhole formation and about one third after. Pinhole formation in 70 nm thick films occurred at temperatures near 600 C, corresponding to a grain size of about 15 nm, or a grain size to film thickness ration of approximately 0.25. The deposition of films on porous substrates is hampered by the penetration of the polymer precursor solution into the substrate whose pores as > 0.2 {micro}m, therefore much attention has to be paid to the development of porous colloidal oxide films onto surfaces. Thus during this line period we have been studying these films. Optical properties have proven to be an excellent way to study the quality of these nanoporous films. The influence of porosity and densification on optical properties of films on sapphire substrates that were prepared from water colloidal suspensions of small ({approx}5nm) particles of ceria was investigated. The colloidal ceria films have initially very porous structure (porosity about 50%) and densification starts at about 600 C accompanied by

  13. Low-temperature experimental studies in molecular biophysics: a review

    NASA Astrophysics Data System (ADS)

    Blagoi, Yu. P.; Sheina, G. G.; Ivanov, A. Yu.; Radchenko, E. D.; Kosevich, M. V.; Shelkovsky, V. S.; Boryak, O. A.; Rubin, Yu. V.

    1999-10-01

    The enormous contribution of Academician Boris I. Verkin in laying the foundation of the biophysics research school in Kharkov are recalled in the Jubilee year commemorating his 80th birthday. This review describes the development and realization of his ideas during the last two decades at Molecular Biophysics Department of the Institute for Low Temperature Physics and Engineering (ILTPE) in Kharkov. Main results of the studies of physical and chemical properties of biopolymer fragments and biologically active compounds using methods of low-temperature electron-vibrational spectroscopy, low-temperature secondary-emission mass spectrometry, and low-temperature luminescence spectroscopy are presented.

  14. Efficiency of a Sandwiched Thermoelectric Material with a Graded Interlayer and Temperature-Dependent Properties

    NASA Astrophysics Data System (ADS)

    Wallace, T. T.; Jin, Z.-H.; Su, J.

    2016-04-01

    This paper investigates the energy conversion efficiency for a sandwiched thermoelectric (TE) material with a graded interlayer and temperature-dependent properties. The graded interlayer can be modeled as a composite of the two homogeneous end material members to achieve continuously varying composition and properties, thus eliminating the electrical contact resistance at the interfaces of segmented TE materials. The temperature distribution and efficiency are obtained by a semianalytical recurrence relation and a simple iteration technique. In the numerical examples, we consider a sandwiched TE element consisting of nanostructured Bi2Te3 at the cold-end side, nanostructured PbTe at the hot-end side, and a graded interlayer of Bi2Te3-PbTe composite. The numerical results show that the peak efficiency of the sandwiched TE material with no contact resistance is higher than that of segmented Bi2Te3/PbTe with contact resistance at the sharp interface between Bi2Te3 and PbTe. The peak efficiency of the sandwiched material is also influenced by the location of and gradation profile in the graded interlayer. Finally, it is found that temperature dependence of properties decreases the efficiencies of Bi2Te3 and PbTe.

  15. Electrical transport and thermoelectric properties of Ni-doped perovskite-type YCo1-x NixO3 (0 <= x <= 0.07) prepared by sol-gel process

    NASA Astrophysics Data System (ADS)

    Liu, Yi; Li, Hai-Jin; Zhang, Qing; Li, Yong; Liu, Hou-Tong

    2013-05-01

    Electrical transport and thermoelectric properties of Ni-doped YCo1-xNixO3(0 <= x <= 0.07), prepared by using the sol-gel process, are investigated in a temperature range from 100 to 780 K. The results show that with the increase of Ni doping content, the values of DC resistivity of YCo1-xNixO3 decrease, but carrier concentration increases. The temperature dependences of the resistivity for YCo1-xNixO3 are found to follow a relation of ln ρ ∝ 1/T in a low-temperature range (LTR) (T < ~ 304 K for x = 0; ~ 230 K < T < ~ 500 K for x = 0.02, 0.05, and 0.07) and high-temperature range (HTR) (T > ~ 655 K for all compounds), respectively. The estimated apparent activation energies for conduction Ea1 in LRT and Ea2 in HTR are both found to decrease monotonically with doping content increasing. At very low temperatures (T < ~230 K), Mott's law is observed for YCo1—xNixO3 (x >= 0.02), indicating that considerable localized states form in the heavy doping compounds. Although the Seebeck coefficient of the compound decreases after Ni doping, the power factor of YCo1-xNixO3 is enhanced remarkably in a temperature range from 300 to 740 K, i.e., a 6-fold increase is achieved at 500 K for YCo0.98Ni0.02O3, indicating that the high-temperature thermoelectric property of YCoO3 can be improved by partial substitution of Ni for Co.

  16. Thermoelectric converter

    DOEpatents

    Kim, C.K.

    1974-02-26

    This invention relates in general to thermoelectric units and more particularly to a tubular thermoelectric unit which includes an array of tandemly arranged radially tapered annular thermoelectric pellets having insulation material of a lower density than the thermoelectric pellets positioned between each pellet. (Official Gazette)

  17. First-principles study of spin-dependent thermoelectric properties of half-metallic Heusler thin films between platinum leads

    NASA Astrophysics Data System (ADS)

    Comtesse, Denis; Geisler, Benjamin; Entel, Peter; Kratzer, Peter; Szunyogh, László

    2014-03-01

    The electronic and magnetic bulk properties of half-metallic Heusler alloys such as Co2FeSi,Co2FeAl, Co2MnSi, and Co2MnAl are investigated by means of ab initio calculations in combination with Monte Carlo simulations. The electronic structure is analyzed using the plane-wave code quantum espresso and the magnetic exchange interactions are determined using the Korringa-Kohn-Rostoker (KKR) method. From the magnetic exchange interactions, the Curie temperature is obtained via Monte Carlo simulations. In addition, electronic transport properties of trilayer systems consisting of two semi-infinite platinum leads and a Heusler layer in-between are obtained from the fully relativistic screened KKR method by employing the Kubo-Greenwood formalism. The focus is on thermoelectric properties, namely, the Seebeck effect and its spin dependence. It turns out that already thin Heusler layers provide highly spin-polarized currents. This is attributed to the recovery of half-metallicity with increasing layer thickness. The absence of electronic states of spin-down electrons around the Fermi level suppresses the contribution of this spin channel to the total conductance, which strongly influences the thermoelectric properties and results in a spin polarization of thermoelectric currents.

  18. Advanced thermoelectric materials with enhanced crystal lattice structure and methods of preparation

    NASA Technical Reports Server (NTRS)

    Fleurial, Jean-Pierre (Inventor); Caillat, Thierry F. (Inventor); Borshchevsky, Alexander (Inventor)

    1998-01-01

    New skutterudite phases including Ru.sub.0.5 Pd.sub.0.5 Sb.sub.3, RuSb.sub.2 Te, and FeSb.sub.2 Te, have been prepared having desirable thermoelectric properties. In addition, a novel thermoelectric device has been prepared using skutterudite phase Fe.sub.0.5 Ni.sub.0.5 Sb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor compounds and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor materials having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using powder metallurgy techniques. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities and good Seebeck coefficients. These materials have low thermal conductivity and relatively low electrical resistivity, and are good candidates for low temperature thermoelectric applications.

  19. Redox and chemisorptive properties of ex-chloride and ex-nitrate Rh/Ce{sub 0.6}Zr{sub 0.4}O{sub 2} catalysts. 1. Effect of low-temperature redox cycling

    SciTech Connect

    Fornasiero, P.; Hickey, N.; Kaspar, J.; Dossi, C.; Gava, D.; Graziani, M.

    2000-01-25

    The influences of low-temperature redox cycling and of the presence of chloride on the redox and chemisorptive properties of Rh/Ce{sub 0.6}Zr{sub 0.4}O{sub 2} were investigated by means of volumetric hydrogen chemisorption, temperature-programmed reduction, and temperature-programmed desorption. This was achieved by conducting experiments on two samples of the material prepared from nitrate and chloride precursors. For the purposes of comparison, some parallel investigations were also conducted on the pure support. The results demonstrate that the interaction of Rh/Ce{sub 0.6}Zr{sub 0.4}O{sub 2} with hydrogen is critically dependent not only on the presence of chloride but also on the specific treatments applied to the sample. The most important effect of chloride is that it inhibits the extent of vacancy creation at common operating temperatures of working three-way catalysts, thereby highlighting the unsuitability of chloride-based preparations for such materials. While some chloride can be removed under the low-temperature cycling conditions employed, the extent of the low-temperature cycling conditions employed, the extent of this removal is small, and a lower degree of reduction was attained by the chloride sample throughout the series of experiments.

  20. Electronic and thermoelectric properties of InN studied using ab initio density functional theory and Boltzmann transport calculations

    NASA Astrophysics Data System (ADS)

    Borges, P. D.; Scolfaro, L.

    2014-12-01

    The thermoelectric properties of indium nitride in the most stable wurtzite phase (w-InN) as a function of electron and hole concentrations and temperature were studied by solving the semiclassical Boltzmann transport equations in conjunction with ab initio electronic structure calculations, within Density Functional Theory. Based on maximally localized Wannier function basis set and the ab initio band energies, results for the Seebeck coefficient are presented and compared with available experimental data for n-type as well as p-type systems. Also, theoretical results for electric conductivity and power factor are presented. Most cases showed good agreement between the calculated properties and experimental data for w-InN unintentionally and p-type doped with magnesium. Our predictions for temperature and concentration dependences of electrical conductivity and power factor revealed a promising use of InN for intermediate and high temperature thermoelectric applications. The rigid band approach and constant scattering time approximation were utilized in the calculations.