Analog parameters of solid source Zn diffusion In X Ga1-X As nTFETs down to 10 K

NASA Astrophysics Data System (ADS)

Bordallo, C.; Martino, J. A.; Agopian, P. G. D.; Alian, A.; Mols, Y.; Rooyackers, R.; Vandooren, A.; Verhulst, A. S.; Smets, Q.; Simoen, E.; Claeys, C.; Collaert, N.

2016-12-01

The analog parameters of In0.53Ga0.47As and In0.7Ga0.3As nTFETs with solid state Zn diffused source are investigated from room temperature down to 10 K. The In0.7Ga0.3As devices are shown to yield a higher on-state current than the In0.53Ga0.47As counterparts, and, consequently, a higher transconductance due to the lower bandgap. At the same time, the In0.7Ga0.3As devices present higher output conductance values. The balance between these two factors results in a higher intrinsic voltage gain (A V) for In0.7Ga0.3As nTFETs at low gate bias and similar A V for both devices at high gate voltage. The transconductance is reduced at low temperature due to the increase of the bandgap, while the output conductance is decreased (improved) upon cooling, which is related to the reduction of the drain dependence of the BTBT generation rate. The temperature influence is more pronounced in the output conductance than in the transconductance, resulting in an increase of the intrinsic voltage gain at low temperatures for both devices and bias.

Fabrication of efficient low-bandgap perovskite solar cells by combining formamidinium tin iodide with methylammonium lead iodide

DOE PAGES

Liao, Weiqiang; Zhao, Dewei; Yu, Yue; ...

2016-09-13

Mixed tin (Sn)-lead (Pb) perovskites with high Sn content exhibit low bandgaps suitable for fabricating the bottom cell of perovskite-based tandem solar cells. In this work, we report on the fabrication of efficient mixed Sn-Pb perovskite solar cells using precursors combining formamidinium tin iodide (FASnI 3) and methylammonium lead iodide (MAPbI 3). The best-performing cell fabricated using a (FASnI 3) 0.6(MAPbI 3) 0.4 absorber with an absorption edge of ~1.2 eV achieved a power conversion efficiency (PCE) of 15.08 (15.00)% with an open-circuit voltage of 0.795 (0.799) V, a short-circuit current density of 26.86(26.82) mA/cm 2, and a fill factormore » of 70.6(70.0)% when measured under forward (reverse) voltage scan. In conclusion, the average PCE of 50 cells we have fabricated is 14.39 ± 0.33%, indicating good reproducibility.« less

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih

Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10 –3 Ω cm 2 and lowmore » voltage consumption below 1 V (at 1 kA/cm 2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.« less

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

DOE PAGES

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; ...

2016-09-19

Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10 –3 Ω cm 2 and lowmore » voltage consumption below 1 V (at 1 kA/cm 2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.« less

A Fresh Look at the Semiconductor Bandgap Using Constant Current Data

ERIC Educational Resources Information Center

Ocaya, R. O.; Luhanga, P. V. C.

2011-01-01

It is shown that the well-known linear variation of p-n diode terminal voltage with temperature at different fixed forward currents allows easy and accurate determination of the semiconductor ideality factor and bandgap from only two data points. This is possible if the temperature difference required to maintain the same diode voltage drop can be…

Low voltage operation of GaN vertical nanowire MOSFET

NASA Astrophysics Data System (ADS)

Son, Dong-Hyeok; Jo, Young-Woo; Seo, Jae Hwa; Won, Chul-Ho; Im, Ki-Sik; Lee, Yong Soo; Jang, Hwan Soo; Kim, Dae-Hyun; Kang, In Man; Lee, Jung-Hee

2018-07-01

GaN gate-all-around (GAA) vertical nanowire MOSFET (VNWMOSFET) with channel length of 300 nm and diameter of 120 nm, the narrowest GaN-based vertical nanowire transistor ever achieved from the top-down approach, was fabricated by utilizing anisotropic side-wall wet etching in TMAH solution and photoresist etch-back process. The VNWMOSFET exhibited output characteristics with very low saturation drain voltage of less than 0.5 V, which is hardly observed from the wide bandgap-based devices. Simulation results indicated that the narrow diameter of the VNWMOSFET with relatively short channel length is responsible for the low voltage operation. The VNWMOSFET also demonstrated normally-off mode with threshold voltage (VTH) of 0.7 V, extremely low leakage current of ∼10-14 A, low drain-induced barrier lowering (DIBL) of 125 mV/V, and subthreshold swing (SS) of 66-122 mV/decade. The GaN GAA VNWMOSFET with narrow channel diameter investigated in this work would be promising for new low voltage logic application. He has been a Professor with the School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu, Korea, since 1993

Investigating Bandgap Energies, Materials, and Design of Light-Emitting Diodes

ERIC Educational Resources Information Center

Wagner, Eugene P., II

2016-01-01

A student laboratory experiment to investigate the intrinsic and extrinsic bandgaps, dopant materials, and diode design in light-emitting diodes (LEDs) is presented. The LED intrinsic bandgap is determined by passing a small constant current through the diode and recording the junction voltage variation with temperature. A second visible…

Singlet fission/silicon solar cell exceeding 100% EQE (Conference Presentation)

NASA Astrophysics Data System (ADS)

Pazos, Luis M.; Lee, Jumin; Kirch, Anton; Tabachnyk, Maxim; Friend, Richard H.; Ehrler, Bruno

2016-09-01

Current matching limits the commercialization of tandem solar cells due to their instability over spectral changes, leading to the need of using solar concentrators and trackers to keep the spectrum stable. We demonstrate that voltage-matched systems show far higher performance over spectral changes; caused by clouds, dust and other variations in atmospheric conditions. Singlet fission is a process in organic semiconductors which has shown very efficient, 200%, down-conversion yield and the generated excitations are long-lived, ideal for solar cells. As a result, the number of publications has grown exponentially in the past 5 years. Yet, so far no one has achieved to combine singlet fission with most low bandgap semiconductors, including crystalline silicon, the dominating solar cell material with a 90% share of the PV Market. Here we show that singlet fission can facilitate the fabrication of voltage-matched systems, opening a simple design route for the effective implementation of down-conversion in commercially available photovoltaic technologies, with no modification of the electronic circuitry of such. The implemention of singlet fission is achieved simply by decoupling the fabrication of the individual subcells. For this demonstration we used an ITO/PEDOT/P3HT/Pentacene/C60/Ag wide-bandgap subcell, and a commercial silicon solar cell as the low-bandgap component. We show that the combination of the two leads to the first tandem silicon solar cell which exceeds 100% external quantum efficiency.

Wireless Low-Power Integrated Basal-Body-Temperature Detection Systems Using Teeth Antennas in the MedRadio Band.

PubMed

Yang, Chin-Lung; Zheng, Gou-Tsun

2015-11-20

This study proposes using wireless low power thermal sensors for basal-body-temperature detection using frequency modulated telemetry devices. A long-term monitoring sensor requires low-power circuits including a sampling circuit and oscillator. Moreover, temperature compensated technologies are necessary because the modulated frequency might have additional frequency deviations caused by the varying temperature. The temperature compensated oscillator is composed of a ring oscillator and a controlled-steering current source with temperature compensation, so the output frequency of the oscillator does not drift with temperature variations. The chip is fabricated in a standard Taiwan Semiconductor Manufacturing Company (TSMC) 0.18-μm complementary metal oxide semiconductor (CMOS) process, and the chip area is 0.9 mm². The power consumption of the sampling amplifier is 128 µW. The power consumption of the voltage controlled oscillator (VCO) core is less than 40 µW, and the output is -3.04 dBm with a buffer stage. The output voltage of the bandgap reference circuit is 1 V. For temperature measurements, the maximum error is 0.18 °C with a standard deviation of ±0.061 °C, which is superior to the required specification of 0.1 °C.

Recent Advances in Wide-Bandgap Photovoltaic Polymers.

PubMed

Cai, Yunhao; Huo, Lijun; Sun, Yanming

2017-06-01

The past decade has witnessed significant advances in the field of organic solar cells (OSCs). Ongoing improvements in the power conversion efficiency of OSCs have been achieved, which were mainly attributed to the design and synthesis of novel conjugated polymers with different architectures and functional moieties. Among various conjugated polymers, the development of wide-bandgap (WBG) polymers has received less attention than that of low-bandgap and medium-bandgap polymers. Here, we briefly summarize recent advances in WBG polymers and their applications in organic photovoltaic (PV) devices, such as tandem, ternary, and non-fullerene solar cells. Addtionally, we also dissuss the application of high open-circuit voltage tandem solar cells in PV-driven electrochemical water dissociation. We mainly focus on the molecular design strategies, the structure-property correlations, and the photovoltaic performance of these WBG polymers. Finally, we extract empirical regularities and provide invigorating perspectives on the future development of WBG photovoltaic materials. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Frequency dispersion of capacitance-voltage characteristics in wide bandgap semiconductor-electrolyte junctions

NASA Astrophysics Data System (ADS)

Frolov, D. S.; Zubkov, V. I.

2016-12-01

The frequency dispersion of capacitance-voltage characteristics and derived charge carrier concentration with application to the junction between an electrolyte and wide band-gap semiconductors are investigated. To expand the measurement frequency range, the precision LCR-meter Agilent E4980A was connected to the electrochemical cell ECVPro Nanometrics via a specially designed switch unit. The influence of series resistance and degree of dopant ionization on the frequency dispersion of CV-measured characteristics are discussed. It was shown that in wide band-gap semiconductors one can get both total and ionized dopant concentration, depending on the test frequency choice for capacitance measurements.

Synergistic effects of lead thiocyanate additive and solvent annealing on the performance of wide-bandgap perovskite solar cells

DOE PAGES

Yu, Yue; Wang, Changlei; Grice, Corey R.; ...

2017-04-26

Here, we show that the cooperation of lead thiocyanate additive and a solvent annealing process can effectively increase the grain size of mixed-cation lead mixed-halide perovskite thin films while avoiding excess lead iodide formation. As a result, the average grain size of the wide-bandgap mixed-cation lead perovskite thin films increases from 66 ± 24 to 1036 ± 111 nm, and the mean carrier lifetime shows a more than 3-fold increase, from 330 ns to over 1000 ns. Consequently, the average open-circuit voltage of wide-bandgap perovskite solar cells increases by 80 (70) mV, and the average power conversion efficiency (PCE) increasesmore » from 13.44 ± 0.48 (11.75 ± 0.34) to 17.68 ± 0.36 (15.58 ± 0.55)% when measured under reverse (forward) voltage scans. The best-performing wide-bandgap perovskite solar cell, with a bandgap of 1.75 eV, achieves a stabilized PCE of 17.18%.« less

Band structures in a two-dimensional phononic crystal with rotational multiple scatterers

NASA Astrophysics Data System (ADS)

Song, Ailing; Wang, Xiaopeng; Chen, Tianning; Wan, Lele

2017-03-01

In this paper, the acoustic wave propagation in a two-dimensional phononic crystal composed of rotational multiple scatterers is investigated. The dispersion relationships, the transmission spectra and the acoustic modes are calculated by using finite element method. In contrast to the system composed of square tubes, there exist a low-frequency resonant bandgap and two wide Bragg bandgaps in the proposed structure, and the transmission spectra coincide with band structures. Specially, the first bandgap is based on locally resonant mechanism, and the simulation results agree well with the results of electrical circuit analogy. Additionally, increasing the rotation angle can remarkably influence the band structures due to the transfer of sound pressure between the internal and external cavities in low-order modes, and the redistribution of sound pressure in high-order modes. Wider bandgaps are obtained in arrays composed of finite unit cells with different rotation angles. The analysis results provide a good reference for tuning and obtaining wide bandgaps, and hence exploring the potential applications of the proposed phononic crystal in low-frequency noise insulation.

Study program to improve the open-circuit voltage of low resistivity single crystal silicon solar cells

NASA Technical Reports Server (NTRS)

Minnucci, J. A.; Matthei, K. W.

1980-01-01

The results of a 14 month program to improve the open circuit voltage of low resistivity silicon solar cells are described. The approach was based on ion implantation in 0.1- to 10.0-ohm-cm float-zone silicon. As a result of the contract effort, open circuit voltages as high as 645 mV (AMO 25 C) were attained by high dose phosphorus implantation followed by furnace annealing and simultaneous SiO2 growth. One key element was to investigate the effects of bandgap narrowing caused by high doping concentrations in the junction layer. Considerable effort was applied to optimization of implant parameters, selection of furnace annealing techniques, and utilization of pulsed electron beam annealing to minimize thermal process-induced defects in the completed solar cells.

Single-graded CIGS with narrow bandgap for tandem solar cells.

PubMed

Feurer, Thomas; Bissig, Benjamin; Weiss, Thomas P; Carron, Romain; Avancini, Enrico; Löckinger, Johannes; Buecheler, Stephan; Tiwari, Ayodhya N

2018-01-01

Multi-junction solar cells show the highest photovoltaic energy conversion efficiencies, but the current technologies based on wafers and epitaxial growth of multiple layers are very costly. Therefore, there is a high interest in realizing multi-junction tandem devices based on cost-effective thin film technologies. While the efficiency of such devices has been limited so far because of the rather low efficiency of semitransparent wide bandgap top cells, the recent rise of wide bandgap perovskite solar cells has inspired the development of new thin film tandem solar devices. In order to realize monolithic, and therefore current-matched thin film tandem solar cells, a bottom cell with narrow bandgap (~1 eV) and high efficiency is necessary. In this work, we present Cu(In,Ga)Se 2 with a bandgap of 1.00 eV and a maximum power conversion efficiency of 16.1%. This is achieved by implementing a gallium grading towards the back contact into a CuInSe 2 base material. We show that this modification significantly improves the open circuit voltage but does not reduce the spectral response range of these devices. Therefore, efficient cells with narrow bandgap absorbers are obtained, yielding the high current density necessary for thin film multi-junction solar cells.

Single-graded CIGS with narrow bandgap for tandem solar cells

PubMed Central

Avancini, Enrico; Buecheler, Stephan; Tiwari, Ayodhya N.

2018-01-01

Abstract Multi-junction solar cells show the highest photovoltaic energy conversion efficiencies, but the current technologies based on wafers and epitaxial growth of multiple layers are very costly. Therefore, there is a high interest in realizing multi-junction tandem devices based on cost-effective thin film technologies. While the efficiency of such devices has been limited so far because of the rather low efficiency of semitransparent wide bandgap top cells, the recent rise of wide bandgap perovskite solar cells has inspired the development of new thin film tandem solar devices. In order to realize monolithic, and therefore current-matched thin film tandem solar cells, a bottom cell with narrow bandgap (~1 eV) and high efficiency is necessary. In this work, we present Cu(In,Ga)Se2 with a bandgap of 1.00 eV and a maximum power conversion efficiency of 16.1%. This is achieved by implementing a gallium grading towards the back contact into a CuInSe2 base material. We show that this modification significantly improves the open circuit voltage but does not reduce the spectral response range of these devices. Therefore, efficient cells with narrow bandgap absorbers are obtained, yielding the high current density necessary for thin film multi-junction solar cells. PMID:29707066

Heat-Electric Power Conversion Without Temperature Difference Using Only n-Type Ba8Au x Si46-x Clathrate with Au Compositional Gradient

NASA Astrophysics Data System (ADS)

Osakabe, Yuki; Tatsumi, Shota; Kotsubo, Yuichi; Iwanaga, Junpei; Yamasoto, Keita; Munetoh, Shinji; Furukimi, Osamu; Nakashima, Kunihiko

2018-02-01

Thermoelectric power generation is typically based on the Seebeck effect under a temperature gradient. However, the heat flux generated by the temperature difference results in low conversion efficiency. Recently, we developed a heat-electric power conversion mechanism using a material consisting of a wide-bandgap n-type semiconductor, a narrow-bandgap intrinsic semiconductor, and a wide-bandgap p-type semiconductor. In this paper, we propose a heat-electric power conversion mechanism in the absence of a temperature difference using only n-type Ba8Au x Si46-x clathrate. Single-crystal Ba8Au x Si46-x clathrate with a Au compositional gradient was synthesized by Czochralski method. Based on the results of wavelength-dispersive x-ray spectroscopy and Seebeck coefficient measurements, the presence of a Au compositional gradient in the sample was confirmed. It also observed that the electrical properties changed gradually from wide-bandgap n-type to narrow-bandgap n-type. When the sample was heated in the absence of a temperature difference, the voltage generated was approximately 0.28 mV at 500°C. These results suggest that only an n-type semiconductor with a controlled bandgap can generate electric power in the absence of a temperature difference.

Dendron engineering in self-host blue iridium dendrimers towards low-voltage-driving and power-efficient nondoped electrophosphorescent devices.

PubMed

Wang, Yang; Wang, Shumeng; Ding, Junqiao; Wang, Lixiang; Jing, Xiabin; Wang, Fosong

2016-12-20

Dendron engineering in self-host blue Ir dendrimers is reported to develop power-efficient nondoped electrophosphorescent devices for the first time, which can be operated at low voltage close to the theoretical limit (E g /e: corresponding to the optical bandgap divided by the electron charge). With increasing dendron's HOMO energy levels from B-POCz to B-CzCz and B-CzTA, effective hole injection is favored to promote exciton formation, resulting in a significant reduction of driving voltage and improvement of power efficiency. Consequently, the nondoped device of B-CzTA achieves extremely low driving voltages of 2.7/3.4/4.4 V and record high power efficiencies of 30.3/24.4/16.3 lm W -1 at 1, 100 and 1000 cd m -2 , respectively. We believe that this work will pave the way to the design of novel power-efficient self-host blue phosphorescent dendrimers used for energy-saving displays and solid-state lightings.

Wide Bandgap Extrinsic Photoconductive Switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sullivan, James S.

2012-01-20

Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the widemore » bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.« less

Observation of low voltage driven green emission from erbium doped Ga{sub 2}O{sub 3} light-emitting devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Zhengwei; Wang, Xu; Zhang, Fabi

Erbium doped Ga{sub 2}O{sub 3} thin films were deposited on Si substrate by pulsed laser deposition method. Bright green emission (∼548 nm) can be observed by naked eye from Ga{sub 2}O{sub 3}:Er/Si light-emitting devices (LEDs). The driven voltage of this LEDs is 6.2 V which is lower than that of ZnO:Er/Si or GaN:Er/Si devices. Since the wide bandgap of Ga{sub 2}O{sub 3} contain more defect-related level which will enhance the effects of recombination between electrons in the defect-related level and the holes in the valence band, resulting in the improvement of the energy transfer to Er ions. We believe that this workmore » paves the way for the development of Si-based green LEDs by using wide bandgap Ga{sub 2}O{sub 3} as the host materials for Er{sup 3+} ions.« less

An Ultra-Low-Power RFID/NFC Frontend IC Using 0.18 μm CMOS Technology for Passive Tag Applications.

PubMed

Bhattacharyya, Mayukh; Gruenwald, Waldemar; Jansen, Dirk; Reindl, Leonhard; Aghassi-Hagmann, Jasmin

2018-05-07

Battery-less passive sensor tags based on RFID or NFC technology have achieved much popularity in recent times. Passive tags are widely used for various applications like inventory control or in biotelemetry. In this paper, we present a new RFID/NFC frontend IC (integrated circuit) for 13.56 MHz passive tag applications. The design of the frontend IC is compatible with the standard ISO 15693/NFC 5. The paper discusses the analog design part in details with a brief overview of the digital interface and some of the critical measured parameters. A novel approach is adopted for the demodulator design, to demodulate the 10% ASK (amplitude shift keying) signal. The demodulator circuit consists of a comparator designed with a preset offset voltage. The comparator circuit design is discussed in detail. The power consumption of the bandgap reference circuit is used as the load for the envelope detection of the ASK modulated signal. The sub-threshold operation and low-supply-voltage are used extensively in the analog design—to keep the power consumption low. The IC was fabricated using 0.18 μ m CMOS technology in a die area of 1.5 mm × 1.5 mm and an effective area of 0.7 m m 2 . The minimum supply voltage desired is 1.2 V, for which the total power consumption is 107 μ W. The analog part of the design consumes only 36 μ W, which is low in comparison to other contemporary passive tags ICs. Eventually, a passive tag is developed using the frontend IC, a microcontroller, a temperature and a pressure sensor. A smart NFC device is used to readout the sensor data from the tag employing an Android-based application software. The measurement results demonstrate the full passive operational capability. The IC is suitable for low-power and low-cost industrial or biomedical battery-less sensor applications. A figure-of-merit (FOM) is proposed in this paper which is taken as a reference for comparison with other related state-of-the-art researches.

An Ultra-Low-Power RFID/NFC Frontend IC Using 0.18 μm CMOS Technology for Passive Tag Applications

PubMed Central

Gruenwald, Waldemar; Jansen, Dirk; Aghassi-Hagmann, Jasmin

2018-01-01

Battery-less passive sensor tags based on RFID or NFC technology have achieved much popularity in recent times. Passive tags are widely used for various applications like inventory control or in biotelemetry. In this paper, we present a new RFID/NFC frontend IC (integrated circuit) for 13.56 MHz passive tag applications. The design of the frontend IC is compatible with the standard ISO 15693/NFC 5. The paper discusses the analog design part in details with a brief overview of the digital interface and some of the critical measured parameters. A novel approach is adopted for the demodulator design, to demodulate the 10% ASK (amplitude shift keying) signal. The demodulator circuit consists of a comparator designed with a preset offset voltage. The comparator circuit design is discussed in detail. The power consumption of the bandgap reference circuit is used as the load for the envelope detection of the ASK modulated signal. The sub-threshold operation and low-supply-voltage are used extensively in the analog design—to keep the power consumption low. The IC was fabricated using 0.18 μm CMOS technology in a die area of 1.5 mm × 1.5 mm and an effective area of 0.7 mm2. The minimum supply voltage desired is 1.2 V, for which the total power consumption is 107 μW. The analog part of the design consumes only 36 μW, which is low in comparison to other contemporary passive tags ICs. Eventually, a passive tag is developed using the frontend IC, a microcontroller, a temperature and a pressure sensor. A smart NFC device is used to readout the sensor data from the tag employing an Android-based application software. The measurement results demonstrate the full passive operational capability. The IC is suitable for low-power and low-cost industrial or biomedical battery-less sensor applications. A figure-of-merit (FOM) is proposed in this paper which is taken as a reference for comparison with other related state-of-the-art researches. PMID:29735939

Electron-Selective TiO 2 Contact for Cu(In,Ga)Se 2 Solar Cells

DOE PAGES

Hsu, Weitse; Sutter-Fella, Carolin M.; Hettick, Mark; ...

2015-11-03

The non-toxic and wide bandgap material TiO 2 is explored as an n-type buffer layer on p-type Cu(In,Ga)Se 2 (CIGS) absorber layer for thin film solar cells. The amorphous TiO 2 thin film deposited by atomic layer deposition process at low temperatures shows conformal coverage on the CIGS absorber layer. Solar cells from non-vacuum deposited CIGS absorbers with TiO 2 buffer layer result in a high short-circuit current density of 38.9 mA/cm 2 as compared to 36.9 mA/cm 2 measured in the reference cell with CdS buffer layer, without compromising open-circuit voltage. The significant photocurrent gain, mainly in the UVmore » part of the spectrum, can be attributed to the low parasitic absorption loss in the ultrathin TiO 2 layer (~10 nm) with a larger bandgap of 3.4 eV compared to 2.4 eV of the traditionally used CdS. Overall the solar cell conversion efficiency was improved from 9.5% to 9.9% by substituting the CdS by TiO 2 on an active cell area of 10.5 mm2. In conclusion, optimized TiO 2/CIGS solar cells show excellent long-term stability. The results imply that TiO 2 is a promising buffer layer material for CIGS solar cells, avoiding the toxic CdS buffer layer with added performance advantage.« less

Comparison of CIGS solar cells made with different structures and fabrication techniques

DOE PAGES

Mansfield, Lorelle M.; Garris, Rebekah L.; Counts, Kahl D.; ...

2016-11-03

Cu(In, Ga)Se2 (CIGS)-based solar cells from six fabricators were characterized and compared. The devices had differing substrates, absorber deposition processes, buffer materials, and contact materials. The effective bandgaps of devices varied from 1.05 to 1.22 eV, with the lowest optical bandgaps occurring in those with metal-precursor absorber processes. Devices with Zn(O, S) or thin CdS buffers had quantum efficiencies above 90% down to 400 nm. Most voltages were 250-300 mV below the Shockley-Queisser limit for their bandgap. Electroluminescence intensity tracked well with the respective voltage deficits. Fill factor (FF) was as high as 95% of the maximum for each device'smore » respective current and voltage, with higher FF corresponding to lower diode quality factors (~1.3). An in-depth analysis of FF losses determined that diode quality reflected in the quality factor, voltage-dependent photocurrent, and, to a lesser extent, the parasitic resistances are the limiting factors. As a result, different absorber processes and device structures led to a range of electrical and physical characteristics, yet this investigation showed that multiple fabrication pathways could lead to high-quality and high-efficiency solar cells.« less

Comparison of CIGS solar cells made with different structures and fabrication techniques

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mansfield, Lorelle M.; Garris, Rebekah L.; Counts, Kahl D.

Cu(In, Ga)Se2 (CIGS)-based solar cells from six fabricators were characterized and compared. The devices had differing substrates, absorber deposition processes, buffer materials, and contact materials. The effective bandgaps of devices varied from 1.05 to 1.22 eV, with the lowest optical bandgaps occurring in those with metal-precursor absorber processes. Devices with Zn(O, S) or thin CdS buffers had quantum efficiencies above 90% down to 400 nm. Most voltages were 250-300 mV below the Shockley-Queisser limit for their bandgap. Electroluminescence intensity tracked well with the respective voltage deficits. Fill factor (FF) was as high as 95% of the maximum for each device'smore » respective current and voltage, with higher FF corresponding to lower diode quality factors (~1.3). An in-depth analysis of FF losses determined that diode quality reflected in the quality factor, voltage-dependent photocurrent, and, to a lesser extent, the parasitic resistances are the limiting factors. As a result, different absorber processes and device structures led to a range of electrical and physical characteristics, yet this investigation showed that multiple fabrication pathways could lead to high-quality and high-efficiency solar cells.« less

Wide Bandgap Extrinsic Photoconductive Switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sullivan, James S.

2013-07-03

Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6HSiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductivemore » switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators.« less

Beyond Donor-Acceptor (D-A) Approach: Structure-Optoelectronic Properties-Organic Photovoltaic Performance Correlation in New D-A1 -D-A2 Low-Bandgap Conjugated Polymers.

PubMed

Chochos, Christos L; Drakopoulou, Sofia; Katsouras, Athanasios; Squeo, Benedetta M; Sprau, Christian; Colsmann, Alexander; Gregoriou, Vasilis G; Cando, Alex-Palma; Allard, Sybille; Scherf, Ullrich; Gasparini, Nicola; Kazerouni, Negar; Ameri, Tayebeh; Brabec, Christoph J; Avgeropoulos, Apostolos

2017-04-01

Low-bandgap near-infrared polymers are usually synthesized using the common donor-acceptor (D-A) approach. However, recently polymer chemists are introducing more complex chemical concepts for better fine tuning of their optoelectronic properties. Usually these studies are limited to one or two polymer examples in each case study so far, though. In this study, the dependence of optoelectronic and macroscopic (device performance) properties in a series of six new D-A 1 -D-A 2 low bandgap semiconducting polymers is reported for the first time. Correlation between the chemical structure of single-component polymer films and their optoelectronic properties has been achieved in terms of absorption maxima, optical bandgap, ionization potential, and electron affinity. Preliminary organic photovoltaic results based on blends of the D-A 1 -D-A 2 polymers as the electron donor mixed with the fullerene derivative [6,6]-phenyl-C 71 -butyric acid methyl ester demonstrate power conversion efficiencies close to 4% with short-circuit current densities (J sc ) of around 11 mA cm -2 , high fill factors up to 0.70, and high open-circuit voltages (V oc s) of 0.70 V. All the devices are fabricated in an inverted architecture with the photoactive layer processed in air with doctor blade technique, showing the compatibility with roll-to-roll large-scale manufacturing processes. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Studies of silicon p-n junction solar cells

NASA Technical Reports Server (NTRS)

Neugroschel, A.; Lindholm, F. A.

1979-01-01

To provide theoretical support for investigating different ways to obtain high open-circuit voltages in p-n junction silicon solar cells, an analytical treatment of heavily doped transparent-emitter devices is presented that includes the effects of bandgap narrowing, Fermi-Dirac statistics, a doping concentration gradient, and a finite surface recombination velocity at the emitter surface. Topics covered include: (1) experimental determination of bandgap narrowing in the emitter of silicon p-n junction devices; (2) heavily doped transparent regions in junction solar cells, diodes, and transistors; (3) high-low-emitter solar cell; (4) determination of lifetimes and recombination currents in p-n junction solar cells; (5) MOS and oxide-charged-induced BSF solar cells; and (6) design of high efficiency solar cells for space and terrestrial applications.

GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

NASA Astrophysics Data System (ADS)

Dogmus, Ezgi; Zegaoui, Malek; Medjdoub, Farid

2018-03-01

We report on extremely low off-state leakage current in AlGaN/GaN-on-silicon metal–insulator–semiconductor high-electron-mobility transistors (MISHEMTs) up to a high blocking voltage. Remarkably low off-state gate and drain leakage currents below 1 µA/mm up to 3 kV have been achieved owing to the use of a thick in situ SiN gate dielectric under the gate, and a local Si substrate removal technique combined with a cost effective 15-µm-thick AlN dielectric layer followed by a Cu deposition. This result establishes a manufacturable state-of-the-art high-voltage GaN-on-silicon power transistors while maintaining a low specific on-resistance of approximately 10 mΩ·cm2.

ALDO: A radiation-tolerant, low-noise, adjustable low drop-out linear regulator in 0.35 μm CMOS technology

NASA Astrophysics Data System (ADS)

Carniti, P.; Cassina, L.; Gotti, C.; Maino, M.; Pessina, G.

2016-07-01

In this work we present ALDO, an adjustable low drop-out linear regulator designed in AMS 0.35 μm CMOS technology. It is specifically tailored for use in the upgraded LHCb RICH detector in order to improve the power supply noise for the front end readout chip (CLARO). ALDO is designed with radiation-tolerant solutions such as an all-MOS band-gap voltage reference and layout techniques aiming to make it able to operate in harsh environments like High Energy Physics accelerators. It is capable of driving up to 200 mA while keeping an adequate power supply filtering capability in a very wide frequency range from 10 Hz up to 100 MHz. This property allows us to suppress the noise and high frequency spikes that could be generated by a DC/DC regulator, for example. ALDO also shows a very low noise of 11.6 μV RMS in the same frequency range. Its output is protected with over-current and short detection circuits for a safe integration in tightly packed environments. Design solutions and measurements of the first prototype are presented.

Four-terminal circuit element with photonic core

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sampayan, Stephen

A four-terminal circuit element is described that includes a photonic core inside of the circuit element that uses a wide bandgap semiconductor material that exhibits photoconductivity and allows current flow through the material in response to the light that is incident on the wide bandgap material. The four-terminal circuit element can be configured based on various hardware structures using a single piece or multiple pieces or layers of a wide bandgap semiconductor material to achieve various designed electrical properties such as high switching voltages by using the photoconductive feature beyond the breakdown voltages of semiconductor devices or circuits operated basedmore » on electrical bias or control designs. The photonic core aspect of the four-terminal circuit element provides unique features that enable versatile circuit applications to either replace the semiconductor transistor-based circuit elements or semiconductor diode-based circuit elements.« less

Fast charge separation in a non-fullerene organic solar cell with a small driving force

NASA Astrophysics Data System (ADS)

Liu, Jing; Chen, Shangshang; Qian, Deping; Gautam, Bhoj; Yang, Guofang; Zhao, Jingbo; Bergqvist, Jonas; Zhang, Fengling; Ma, Wei; Ade, Harald; Inganäs, Olle; Gundogdu, Kenan; Gao, Feng; Yan, He

2016-07-01

Fast and efficient charge separation is essential to achieve high power conversion efficiency in organic solar cells (OSCs). In state-of-the-art OSCs, this is usually achieved by a significant driving force, defined as the offset between the bandgap (Egap) of the donor/acceptor materials and the energy of the charge transfer (CT) state (ECT), which is typically greater than 0.3 eV. The large driving force causes a relatively large voltage loss that hinders performance. Here, we report non-fullerene OSCs that exhibit ultrafast and efficient charge separation despite a negligible driving force, as ECT is nearly identical to Egap. Moreover, the small driving force is found to have minimal detrimental effects on charge transfer dynamics of the OSCs. We demonstrate a non-fullerene OSC with 9.5% efficiency and nearly 90% internal quantum efficiency despite a low voltage loss of 0.61 V. This creates a path towards highly efficient OSCs with a low voltage loss.

Structure and Optical Bandgap Relationship of π-Conjugated Systems

PubMed Central

Botelho, André Leitão; Shin, Yongwoo; Liu, Jiakai; Lin, Xi

2014-01-01

In bulk heterojunction photovoltaic systems both the open-circuit voltage as well as the short-circuit current, and hence the power conversion efficiency, are dependent on the optical bandgap of the electron-donor material. While first-principles methods are computationally intensive, simpler model Hamiltonian approaches typically suffer from one or more flaws: inability to optimize the geometries for their own input; absence of general, transferable parameters; and poor performance for non-planar systems. We introduce a set of new and revised parameters for the adapted Su-Schrieffer-Heeger (aSSH) Hamiltonian, which is capable of optimizing geometries, along with rules for applying them to any -conjugated system containing C, N, O, or S, including non-planar systems. The predicted optical bandgaps show excellent agreement to UV-vis spectroscopy data points from literature, with a coefficient of determination , a mean error of −0.05 eV, and a mean absolute deviation of 0.16 eV. We use the model to gain insights from PEDOT, fused thiophene polymers, poly-isothianaphthene, copolymers, and pentacene as sources of design rules in the search for low bandgap materials. Using the model as an in-silico design tool, a copolymer of benzodithiophenes along with a small-molecule derivative of pentacene are proposed as optimal donor materials for organic photovoltaics. PMID:24497944

Transparent conducting oxide nanotubes

NASA Astrophysics Data System (ADS)

Alivov, Yahya; Singh, Vivek; Ding, Yuchen; Nagpal, Prashant

2014-09-01

Thin film or porous membranes made of hollow, transparent, conducting oxide (TCO) nanotubes, with high chemical stability, functionalized surfaces and large surface areas, can provide an excellent platform for a wide variety of nanostructured photovoltaic, photodetector, photoelectrochemical and photocatalytic devices. While large-bandgap oxide semiconductors offer transparency for incident light (below their nominal bandgap), their low carrier concentration and poor conductivity makes them unsuitable for charge conduction. Moreover, materials with high conductivity have nominally low bandgaps and hence poor light transmittance. Here, we demonstrate thin films and membranes made from TiO2 nanotubes heavily-doped with shallow Niobium (Nb) donors (up to 10%, without phase segregation), using a modified electrochemical anodization process, to fabricate transparent conducting hollow nanotubes. Temperature dependent current-voltage characteristics revealed that TiO2 TCO nanotubes, doped with 10% Nb, show metal-like behavior with resistivity decreasing from 6.5 × 10-4 Ωcm at T = 300 K (compared to 6.5 × 10-1 Ωcm for nominally undoped nanotubes) to 2.2 × 10-4 Ωcm at T = 20 K. Optical properties, studied by reflectance measurements, showed light transmittance up to 90%, within wavelength range 400 nm-1000 nm. Nb doping also improves the field emission properties of TCO nanotubes demonstrating an order of magnitude increase in field-emitter current, compared to undoped samples.

Low-power low-voltage superior-order curvature corrected voltage reference

NASA Astrophysics Data System (ADS)

Popa, Cosmin

2010-06-01

A complementary metal oxide semiconductor (CMOS) voltage reference with a logarithmic curvature-correction will be presented. The first-order compensation is realised using an original offset voltage follower (OVF) block as a proportional to absolute temperature (PTAT) voltage generator, with the advantages of reducing the silicon area and of increasing accuracy by replacing matched resistors with matched transistors. The new logarithmic curvature-correction technique will be implemented using an asymmetric differential amplifier (ADA) block for compensating the logarithmic temperature dependent term from the first-order compensated voltage reference. In order to increase the circuit accuracy, an original temperature-dependent current generator will be designed for computing the exact type of the implemented curvature-correction. The relatively small complexity of the current squarer allows an important increasing of the circuit accuracy that could be achieved by increasing the current generator complexity. As a result of operating most of the MOS transistors in weak inversion, the original proposed voltage reference could be valuable for low-power applications. The circuit is implemented in 0.35 μm CMOS technology and consumes only 60μA for t = 25°C, being supplied at the minimal supply voltage V DD = 1.75V. The temperature coefficient of the reference voltage is 8.7 ppm/°C, while the line sensitivity is 0.75 mV/V for a supply voltage between 1.75 V and 7 V.

Correlation between Photoluminescence and Carrier Transport and a Simple In Situ Passivation Method for High-Bandgap Hybrid Perovskites

DOE PAGES

Stoddard, Ryan J.; Eickemeyer, Felix T.; Katahara, John K.; ...

2017-06-21

High-bandgap mixed-halide hybrid perovskites have higher open-circuit voltage deficits and lower carrier diffusion lengths than their lower-bandgap counterparts. We have developed a ligand-assisted crystallization (LAC) technique that introduces additives in situ during the solvent wash and developed a new method to dynamically measure the absolute intensity steady-state photoluminescence and the mean carrier diffusion length simultaneously. The measurements reveal four distinct regimes of material changes and show that photoluminescence brightening often coincides with losses in carrier transport, such as in degradation or phase segregation. Further, the measurements enabled optimization of LAC on the 1.75 eV bandgap FA 0.83Cs 0.17Pb(I 0.66Br 0.34)more » 3, resulting in an enhancement of the photoluminescence quantum yield (PLQY) of over an order of magnitude, an increase of 80 meV in the quasi-Fermi level splitting (to 1.29 eV), an increase in diffusion length by a factor of 3.5 (to over 1 μm), and enhanced open-circuit voltage and short-circuit current from photovoltaics fabricated from the LAC-treated films.« less

Correlation between Photoluminescence and Carrier Transport and a Simple In Situ Passivation Method for High-Bandgap Hybrid Perovskites.

PubMed

Stoddard, Ryan J; Eickemeyer, Felix T; Katahara, John K; Hillhouse, Hugh W

2017-07-20

High-bandgap mixed-halide hybrid perovskites have higher open-circuit voltage deficits and lower carrier diffusion lengths than their lower-bandgap counterparts. We have developed a ligand-assisted crystallization (LAC) technique that introduces additives in situ during the solvent wash and developed a new method to dynamically measure the absolute intensity steady-state photoluminescence and the mean carrier diffusion length simultaneously. The measurements reveal four distinct regimes of material changes and show that photoluminescence brightening often coincides with losses in carrier transport, such as in degradation or phase segregation. Further, the measurements enabled optimization of LAC on the 1.75 eV bandgap FA 0.83 Cs 0.17 Pb(I 0.66 Br 0.34 ) 3 , resulting in an enhancement of the photoluminescence quantum yield (PLQY) of over an order of magnitude, an increase of 80 meV in the quasi-Fermi level splitting (to 1.29 eV), an increase in diffusion length by a factor of 3.5 (to over 1 μm), and enhanced open-circuit voltage and short-circuit current from photovoltaics fabricated from the LAC-treated films.

Temperature dependent quasi-static capacitance-voltage characterization of SiO2/β-Ga2O3 interface on different crystal orientations

NASA Astrophysics Data System (ADS)

Zeng, Ke; Singisetti, Uttam

2017-09-01

The interface trap density (Dit) of the SiO2/β-Ga2O3 interface in ( 2 ¯ 01), (010), and (001) orientations is obtained by the Hi-Lo method with the low frequency capacitance measured using the Quasi-Static Capacitance-Voltage (QSCV) technique. QSCV measurements are carried out at higher temperatures to increase the measured energy range of Dit in the bandgap. At room temperature, higher Dit is observed near the band edge for all three orientations. The measurement at higher temperatures led to an annealing effect that reduced the Dit value for all samples. Comparison with the conductance method and frequency dispersion of the capacitance suggests that the traps at the band edge are slow traps which respond to low frequency signals.

Active tuning of vibration and wave propagation in elastic beams with periodically placed piezoelectric actuator/sensor pairs

NASA Astrophysics Data System (ADS)

Li, Fengming; Zhang, Chuanzeng; Liu, Chunchuan

2017-04-01

A novel strategy is proposed to actively tune the vibration and wave propagation properties in elastic beams. By periodically placing the piezoelectric actuator/sensor pairs along the beam axis, an active periodic beam structure which exhibits special vibration and wave propagation properties such as the frequency pass-bands and stop-bands (or band-gaps) is developed. Hamilton's principle is applied to establish the equations of motion of the sub-beam elements i.e. the unit-cells, bonded by the piezoelectric patches. A negative proportional feedback control strategy is employed to design the controllers which can provide a positive active stiffness to the beam for a positive feedback control gain, which can increase the stability of the structural system. By means of the added positive active stiffness, the periodicity or the band-gap property of the beam with periodically placed piezoelectric patches can be actively tuned. From the investigation, it is shown that better band-gap characteristics can be achieved by using the negative proportional feedback control. The band-gaps can be obviously broadened by properly increasing the control gain, and they can also be greatly enlarged by appropriately designing the structural sizes of the controllers. The control voltages applied on the piezoelectric actuators are in reasonable and controllable ranges, especially, they are very low in the band-gaps. Thus, the vibration and wave propagation behaviors of the elastic beam can be actively controlled by the periodically placed piezoelectric patches.

Competitive behavior of photons contributing to junction voltage jump in narrow band-gap semiconductor multi-quantum-well laser diodes at lasing threshold

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Liefeng, E-mail: fengliefeng@tju.edu.cn, E-mail: lihongru@nankai.edu.cn; Yang, Xiufang; Wang, Cunda

2015-04-15

The junction behavior of different narrow band-gap multi-quantum-well (MQW) laser diodes (LDs) confirmed that the jump in the junction voltage in the threshold region is a general characteristic of narrow band-gap LDs. The relative change in the 1310 nm LD is the most obvious. To analyze this sudden voltage change, the threshold region is divided into three stages by I{sub th}{sup l} and I{sub th}{sup u}, as shown in Fig. 2; I{sub th}{sup l} is the conventional threshold, and as long as the current is higher than this threshold, lasing exists and the IdV/dI-I plot drops suddenly; I{sub th}{sup u}more » is the steady lasing point, at which the separation of the quasi-Fermi levels of electron and holes across the active region (V{sub j}) is suddenly pinned. Based on the evolutionary model of dissipative structure theory, the rate equations of the photons in a single-mode LD were deduced in detail at I{sub th}{sup l} and I{sub th}{sup u}. The results proved that the observed behavior of stimulated emission suddenly substituting for spontaneous emission, in a manner similar to biological evolution, must lead to a sudden increase in the injection carriers in the threshold region, which then causes the sudden increase in the junction voltage in this region.« less

Gap-state engineering of visible-light-active ferroelectrics for photovoltaic applications.

PubMed

Matsuo, Hiroki; Noguchi, Yuji; Miyayama, Masaru

2017-08-08

Photoferroelectrics offer unique opportunities to explore light energy conversion based on their polarization-driven carrier separation and above-bandgap voltages. The problem associated with the wide bandgap of ferroelectric oxides, i.e., the vanishingly small photoresponse under visible light, has been overcome partly by bandgap tuning, but the narrowing of the bandgap is, in principle, accompanied by a substantial loss of ferroelectric polarization. In this article, we report an approach, 'gap-state' engineering, to produce photoferroelectrics, in which defect states within the bandgap act as a scaffold for photogeneration. Our first-principles calculations and single-domain thin-film experiments of BiFeO 3 demonstrate that gap states half-filled with electrons can enhance not only photocurrents but also photovoltages over a broad photon-energy range that is different from intermediate bands in present semiconductor-based solar cells. Our approach opens a promising route to the material design of visible-light-active ferroelectrics without sacrificing spontaneous polarization.Overcoming the optical transparency of wide bandgap of ferroelectric oxides by narrowing its bandgap tends to result in a loss of polarization. By utilizing defect states within the bandgap, Matsuo et al. report visible-light-active ferroelectrics without sacrificing polarization.

Studies of silicon pn junction solar cells

NASA Technical Reports Server (NTRS)

Lindholm, F. A.; Neugroschel, A.

1977-01-01

Modifications of the basic Shockley equations that result from the random and nonrandom spatial variations of the chemical composition of a semiconductor were developed. These modifications underlie the existence of the extensive emitter recombination current that limits the voltage over the open circuit of solar cells. The measurement of parameters, series resistance and the base diffusion length is discussed. Two methods are presented for establishing the energy bandgap narrowing in the heavily-doped emitter region. Corrections that can be important in the application of one of these methods to small test cells are examined. Oxide-charge-induced high-low-junction emitter (OCI-HLE) test cells which exhibit considerably higher voltage over the open circuit than was previously seen in n-on-p solar cells are described.

Computer analysis of the negative differential resistance switching phenomenon of double-injection devices

NASA Technical Reports Server (NTRS)

Shieh, Tsay-Jiu

1989-01-01

By directly solving the semiconductor differential equations for the double-injection (DI) devices involving two interacting deep levels, the authors studied the negative differential resistance switching characteristic and its relationship with the device dimension, doping level, and dependence on the deep impurity profile. Computer simulation showed that although one can increase the threshold voltage by increasing the device length, the excessive holding voltage that would follow would put this device in a very limited application such as pulse power source. The excessive leakage current in the low conductance state also jeopardizes the attempt to use the device for any practical purpose. Unless there are new materials and deep impurities found that have a great differential hole and electron capture cross sections and a reasonable energy bandgap for low intrinsic carrier concentration, no big improvement in the fate of DI devices is expected in the near future.

Molecular Electronic Coupling Controls Charge Recombination Kinetics in Organic Solar Cells of Low Bandgap Diketopyrrolopyrrole, Carbazole, and Thiophene Polymers

PubMed Central

2013-01-01

Low-bandgap diketopyrrolopyrrole- and carbazole-based polymer bulk-heterojunction solar cells exhibit much faster charge carrier recombination kinetics than that encountered for less-recombining poly(3-hexylthiophene). Solar cells comprising these polymers exhibit energy losses caused by carrier recombination of approximately 100 mV, expressed as reduction in open-circuit voltage, and consequently photovoltaic conversion efficiency lowers in more than 20%. The analysis presented here unravels the origin of that energy loss by connecting the limiting mechanism governing recombination dynamics to the electronic coupling occurring at the donor polymer and acceptor fullerene interfaces. Previous approaches correlate carrier transport properties and recombination kinetics by means of Langevin-like mechanisms. However, neither carrier mobility nor polymer ionization energy helps understanding the variation of the recombination coefficient among the studied polymers. In the framework of the charge transfer Marcus theory, it is proposed that recombination time scale is linked with charge transfer molecular mechanisms at the polymer/fullerene interfaces. As expected for efficient organic solar cells, small electronic coupling existing between donor polymers and acceptor fullerene (Vif < 1 meV) and large reorganization energy (λ ≈ 0.7 eV) are encountered. Differences in the electronic coupling among polymer/fullerene blends suffice to explain the slowest recombination exhibited by poly(3-hexylthiophene)-based solar cells. Our approach reveals how to directly connect photovoltaic parameters as open-circuit voltage to molecular properties of blended materials. PMID:23662167

A magnetic phase-transition graphene transistor with tunable spin polarization

NASA Astrophysics Data System (ADS)

Vancsó, Péter; Hagymási, Imre; Tapasztó, Levente

2017-06-01

Graphene nanoribbons (GNRs) have been proposed as potential building blocks for field effect transistor (FET) devices due to their quantum confinement bandgap. Here, we propose a novel GNR device concept, enabling the control of both charge and spin signals, integrated within the simplest three-terminal device configuration. In a conventional FET device, a gate electrode is employed to tune the Fermi level of the system in and out of a static bandgap. By contrast, in the switching mechanism proposed here, the applied gate voltage can dynamically open and close an interaction gap, with only a minor shift of the Fermi level. Furthermore, the strong interplay of the band structure and edge spin configuration in zigzag ribbons enables such transistors to carry spin polarized current without employing an external magnetic field or ferromagnetic contacts. Using an experimentally validated theoretical model, we show that such transistors can switch at low voltages and high speed, and the spin polarization of the current can be tuned from 0% to 50% by using the same back gate electrode. Furthermore, such devices are expected to be robust against edge irregularities and can operate at room temperature. Controlling both charge and spin signal within the simplest FET device configuration could open up new routes in data processing with graphene based devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jana, Dipankar, E-mail: dip2602@gmail.com; Porwal, S.; Sharma, T. K., E-mail: tarun@rrcat.gov.in

Pump-probe Surface Photovoltage Spectroscopy (SPS) measurements are performed on semiconductor epitaxial layers. Here, an additional sub-bandgap cw pump laser beam is used in a conventional chopped light geometry SPS setup under the pump-probe configuration. The main role of pump laser beam is to saturate the sub-bandgap localized states whose contribution otherwise swamp the information related to the bandgap of material. It also affects the magnitude of Dember voltage in case of semi-insulating (SI) semiconductor substrates. Pump-probe SPS technique enables an accurate determination of the bandgap of semiconductor epitaxial layers even under the strong influence of localized sub-bandgap states. The pumpmore » beam is found to be very effective in suppressing the effect of surface/interface and bulk trap states. The overall magnitude of SPV signal is decided by the dependence of charge separation mechanisms on the intensity of the pump beam. On the contrary, an above bandgap cw pump laser can be used to distinguish the signatures of sub-bandgap states by suppressing the band edge related feature. Usefulness of the pump-probe SPS technique is established by unambiguously determining the bandgap of p-GaAs epitaxial layers grown on SI-GaAs substrates, SI-InP wafers, and p-GaN epilayers grown on Sapphire substrates.« less

Pump-probe surface photovoltage spectroscopy measurements on semiconductor epitaxial layers.

PubMed

Jana, Dipankar; Porwal, S; Sharma, T K; Kumar, Shailendra; Oak, S M

2014-04-01

Pump-probe Surface Photovoltage Spectroscopy (SPS) measurements are performed on semiconductor epitaxial layers. Here, an additional sub-bandgap cw pump laser beam is used in a conventional chopped light geometry SPS setup under the pump-probe configuration. The main role of pump laser beam is to saturate the sub-bandgap localized states whose contribution otherwise swamp the information related to the bandgap of material. It also affects the magnitude of Dember voltage in case of semi-insulating (SI) semiconductor substrates. Pump-probe SPS technique enables an accurate determination of the bandgap of semiconductor epitaxial layers even under the strong influence of localized sub-bandgap states. The pump beam is found to be very effective in suppressing the effect of surface/interface and bulk trap states. The overall magnitude of SPV signal is decided by the dependence of charge separation mechanisms on the intensity of the pump beam. On the contrary, an above bandgap cw pump laser can be used to distinguish the signatures of sub-bandgap states by suppressing the band edge related feature. Usefulness of the pump-probe SPS technique is established by unambiguously determining the bandgap of p-GaAs epitaxial layers grown on SI-GaAs substrates, SI-InP wafers, and p-GaN epilayers grown on Sapphire substrates.

Reducing the efficiency-stability-cost gap of organic photovoltaics with highly efficient and stable small molecule acceptor ternary solar cells

NASA Astrophysics Data System (ADS)

Baran, Derya; Ashraf, Raja Shahid; Hanifi, David A.; Abdelsamie, Maged; Gasparini, Nicola; Röhr, Jason A.; Holliday, Sarah; Wadsworth, Andrew; Lockett, Sarah; Neophytou, Marios; Emmott, Christopher J. M.; Nelson, Jenny; Brabec, Christoph J.; Amassian, Aram; Salleo, Alberto; Kirchartz, Thomas; Durrant, James R.; McCulloch, Iain

2017-03-01

Technological deployment of organic photovoltaic modules requires improvements in device light-conversion efficiency and stability while keeping material costs low. Here we demonstrate highly efficient and stable solar cells using a ternary approach, wherein two non-fullerene acceptors are combined with both a scalable and affordable donor polymer, poly(3-hexylthiophene) (P3HT), and a high-efficiency, low-bandgap polymer in a single-layer bulk-heterojunction device. The addition of a strongly absorbing small molecule acceptor into a P3HT-based non-fullerene blend increases the device efficiency up to 7.7 +/- 0.1% without any solvent additives. The improvement is assigned to changes in microstructure that reduce charge recombination and increase the photovoltage, and to improved light harvesting across the visible region. The stability of P3HT-based devices in ambient conditions is also significantly improved relative to polymer:fullerene devices. Combined with a low-bandgap donor polymer (PBDTTT-EFT, also known as PCE10), the two mixed acceptors also lead to solar cells with 11.0 +/- 0.4% efficiency and a high open-circuit voltage of 1.03 +/- 0.01 V.

A new curvature compensation technique for CMOS voltage reference using |VGS| and ΔVBE

NASA Astrophysics Data System (ADS)

Xuemin, Li; Mao, Ye; Gongyuan, Zhao; Yun, Zhang; Yiqiang, Zhao

2016-05-01

A new mixed curvature compensation technique for CMOS voltage reference is presented, which resorts to two sub-references with complementary temperature characteristics. The first sub-reference is the source-gate voltage |VGS|p of a PMOS transistor working in the saturated region. The second sub-reference is the weighted sum of gate-source voltages |VGS|n of NMOS transistors in the subthreshold region and the difference between two base-emitter voltages ΔVBE of bipolar junction transistors (BJTs). The voltage reference implemented utilizing the proposed curvature compensation technique exhibits a low temperature coefficient and occupies a small silicon area. The proposed technique was verified in 0.18 μm standard CMOS process technology. The performance of the circuit has been measured. The measured results show a temperature coefficient as low as 12.7 ppm/°C without trimming, over a temperature range from -40 to 120 °C, and the current consumption is 50 μA at room temperature. The measured power-supply rejection ratio (PSRR) is -31.2 dB @ 100 kHz. The circuit occupies an area of 0.045 mm2. Project supported by the National Natural Science Foundation of China (No. 61376032).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stoddard, Ryan J.; Eickemeyer, Felix T.; Katahara, John K.

High-bandgap mixed-halide hybrid perovskites have higher open-circuit voltage deficits and lower carrier diffusion lengths than their lower-bandgap counterparts. We have developed a ligand-assisted crystallization (LAC) technique that introduces additives in situ during the solvent wash and developed a new method to dynamically measure the absolute intensity steady-state photoluminescence and the mean carrier diffusion length simultaneously. The measurements reveal four distinct regimes of material changes and show that photoluminescence brightening often coincides with losses in carrier transport, such as in degradation or phase segregation. Further, the measurements enabled optimization of LAC on the 1.75 eV bandgap FA 0.83Cs 0.17Pb(I 0.66Br 0.34)more » 3, resulting in an enhancement of the photoluminescence quantum yield (PLQY) of over an order of magnitude, an increase of 80 meV in the quasi-Fermi level splitting (to 1.29 eV), an increase in diffusion length by a factor of 3.5 (to over 1 μm), and enhanced open-circuit voltage and short-circuit current from photovoltaics fabricated from the LAC-treated films.« less

An ultra-stable voltage source for precision Penning-trap experiments

NASA Astrophysics Data System (ADS)

Böhm, Ch.; Sturm, S.; Rischka, A.; Dörr, A.; Eliseev, S.; Goncharov, M.; Höcker, M.; Ketter, J.; Köhler, F.; Marschall, D.; Martin, J.; Obieglo, D.; Repp, J.; Roux, C.; Schüssler, R. X.; Steigleder, M.; Streubel, S.; Wagner, Th.; Westermann, J.; Wieder, V.; Zirpel, R.; Melcher, J.; Blaum, K.

2016-08-01

An ultra-stable and low-noise 25-channel voltage source providing 0 to -100 V has been developed. It will supply stable bias potentials for Penning-trap electrodes used in high-precision experiments. The voltage source generates all its supply voltages via a specially designed transformer. Each channel can be operated either in a precision mode or can be dynamically ramped. A reference module provides reference voltages for all the channels, each of which includes a low-noise amplifier to gain a factor of 10 in the output stage. A relative voltage stability of δV / V ≈ 2 ×10-8 has been demonstrated at -89 V within about 10 min.

Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy

NASA Astrophysics Data System (ADS)

Hsiao, F.-M.; Schnedler, M.; Portz, V.; Huang, Y.-C.; Huang, B.-C.; Shih, M.-C.; Chang, C.-W.; Tu, L.-W.; Eisele, H.; Dunin-Borkowski, R. E.; Ebert, Ph.; Chiu, Y.-P.

2017-01-01

We demonstrate the potential of sub-bandgap laser-excited cross-sectional scanning tunneling microscopy and spectroscopy to investigate the presence of defect states in semiconductors. The characterization method is illustrated on GaN layers grown on Si(111) substrates without intentional buffer layers. According to high-resolution transmission electron microscopy and cathodoluminescence spectroscopy, the GaN layers consist of nanoscale wurtzite and zincblende crystallites with varying crystal orientations and hence contain high defect state densities. In order to discriminate between band-to-band excitation and defect state excitations, we use sub-bandgap laser excitation. We probe a clear increase in the tunnel current at positive sample voltages during sub-bandgap laser illumination for the GaN layer with high defect density, but no effect is found for high quality GaN epitaxial layers. This demonstrates the excitation of free charge carriers at defect states. Thus, sub-bandgap laser-excited scanning tunneling spectroscopy is a powerful complimentary characterization tool for defect states.

Increasing Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.

DOEpatents

Li, Yaun-Min; Bennett, Murray S.; Yang, Liyou

1999-08-24

High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

Increased Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.

DOEpatents

Li, Yaun-Min; Bennett, Murray S.; Yang, Liyou

1997-07-08

High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

Quasi-Fermi level splitting and sub-bandgap absorptivity from semiconductor photoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Katahara, John K.; Hillhouse, Hugh W., E-mail: h2@uw.edu

A unified model for the direct gap absorption coefficient (band-edge and sub-bandgap) is developed that encompasses the functional forms of the Urbach, Thomas-Fermi, screened Thomas-Fermi, and Franz-Keldysh models of sub-bandgap absorption as specific cases. We combine this model of absorption with an occupation-corrected non-equilibrium Planck law for the spontaneous emission of photons to yield a model of photoluminescence (PL) with broad applicability to band-band photoluminescence from intrinsic, heavily doped, and strongly compensated semiconductors. The utility of the model is that it is amenable to full-spectrum fitting of absolute intensity PL data and yields: (1) the quasi-Fermi level splitting, (2) themore » local lattice temperature, (3) the direct bandgap, (4) the functional form of the sub-bandgap absorption, and (5) the energy broadening parameter (Urbach energy, magnitude of potential fluctuations, etc.). The accuracy of the model is demonstrated by fitting the room temperature PL spectrum of GaAs. It is then applied to Cu(In,Ga)(S,Se){sub 2} (CIGSSe) and Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) to reveal the nature of their tail states. For GaAs, the model fit is excellent, and fitted parameters match literature values for the bandgap (1.42 eV), functional form of the sub-bandgap states (purely Urbach in nature), and energy broadening parameter (Urbach energy of 9.4 meV). For CIGSSe and CZTSSe, the model fits yield quasi-Fermi leveling splittings that match well with the open circuit voltages measured on devices made from the same materials and bandgaps that match well with those extracted from EQE measurements on the devices. The power of the exponential decay of the absorption coefficient into the bandgap is found to be in the range of 1.2 to 1.6, suggesting that tunneling in the presence of local electrostatic potential fluctuations is a dominant factor contributing to the sub-bandgap absorption by either purely electrostatic (screened Thomas-Fermi) or a photon-assisted tunneling mechanism (Franz-Keldysh). A Gaussian distribution of bandgaps (local E{sub g} fluctuation) is found to be inconsistent with the data. The sub-bandgap absorption of the CZTSSe absorber is found to be larger than that for CIGSSe for materials that yield roughly equivalent photovoltaic devices (8% efficient). Further, it is shown that fitting only portions of the PL spectrum (e.g., low energy for energy broadening parameter and high energy for quasi-Fermi level splitting) may lead to significant errors for materials with substantial sub-bandgap absorption and emission.« less

The importance of surface recombination and energy-bandgap narrowing in p-n-junction silicon solar cells

NASA Technical Reports Server (NTRS)

Fossum, J. G.; Lindholm, F. A.; Shibib, M. A.

1979-01-01

Experimental data demonstrating the sensitivity of open-circuit voltage to front-surface conditions are presented for a variety of p-n-junction silicon solar cells. Analytical models accounting for the data are defined and supported by additional experiments. The models and the data imply that a) surface recombination significantly limits the open-circuit voltage (and the short-circuit current) of typical silicon cells, and b) energy-bandgap narrowing is important in the manifestation of these limitations. The models suggest modifications in both the structural design and the fabrication processing of the cells that would result in substantial improvements in cell performance. The benefits of one such modification - the addition of a thin thermal silicon-dioxide layer on the front surface - are indicated experimentally.

Nanometer-scale surface potential and resistance mapping of wide-bandgap Cu(In,Ga)Se2 thin films

NASA Astrophysics Data System (ADS)

Jiang, C.-S.; Contreras, M. A.; Mansfield, L. M.; Moutinho, H. R.; Egaas, B.; Ramanathan, K.; Al-Jassim, M. M.

2015-01-01

We report microscopic characterization studies of wide-bandgap Cu(In,Ga)Se2 photovoltaic thin films using the nano-electrical probes of scanning Kelvin probe force microscopy and scanning spreading resistance microscopy. With increasing bandgap, the potential imaging shows significant increases in both the large potential features due to extended defects or defect aggregations and the potential fluctuation due to unresolvable point defects with single or a few charges. The resistance imaging shows increases in both overall resistance and resistance nonuniformity due to defects in the subsurface region. These defects are expected to affect open-circuit voltage after the surfaces are turned to junction upon device completion.

A Integrated Circuit for a Biomedical Capacitive Pressure Transducer

NASA Astrophysics Data System (ADS)

Smith, Michael John Sebastian

Medical research has an urgent need for a small, accurate, stable, low-power, biocompatible and inexpensive pressure sensor with a zero to full-scale range of 0-300 mmHg. An integrated circuit (IC) for use with a capacitive pressure transducer was designed, built and tested. The random pressure measurement error due to resolution and non-linearity is (+OR-)0.4 mmHg (at mid-range with a full -scale of 300 mmHg). The long-term systematic error due to falling battery voltage is (+OR-)0.6 mmHg. These figures were calculated from measurements of temperature, supply dependence and non-linearity on completed integrated circuits. The sensor IC allows measurement of temperature to (+OR-)0.1(DEGREES)C to allow for temperature compensation of the transducer. Novel micropower circuit design of the system components enabled these levels of accuracy to be reached. Capacitance is measured by a new ratiometric scheme employing an on -chip reference capacitor. This method greatly reduces the effects of voltage supply, temperature and manufacturing variations on the sensor circuit performance. The limits on performance of the bandgap reference circuit fabricated with a standard bipolar process using ion-implanted resistors were determined. Measurements confirm the limits of temperature stability as approximately (+OR-)300 ppm/(DEGREES)C. An exact analytical expression for the period of the Schmitt trigger oscillator, accounting for non-constant capacitor charging current, was formulated. Experiments to test agreement with theory showed that prediction of the oscillator period was very accurate. The interaction of fundamental and practical limits on the scaling of the transducer size was investigated including a correction to previous theoretical analysis of jitter in an RC oscillator. An areal reduction of 4 times should be achievable.

Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters.

PubMed

Zhao, Chao; Ebaid, Mohamed; Zhang, Huafan; Priante, Davide; Janjua, Bilal; Zhang, Daliang; Wei, Nini; Alhamoud, Abdullah A; Shakfa, Mohammad Khaled; Ng, Tien Khee; Ooi, Boon S

2018-06-13

p-Type doping in wide bandgap and new classes of ultra-wide bandgap materials has long been a scientific and engineering problem. The challenges arise from the large activation energy of dopants and high densities of dislocations in materials. We report here, a significantly enhanced p-type conduction using high-quality AlGaN nanowires. For the first time, the hole concentration in Mg-doped AlGaN nanowires is quantified. The incorporation of Mg into AlGaN was verified by correlation with photoluminescence and Raman measurements. The open-circuit potential measurements further confirmed the p-type conductivity, while Mott-Schottky experiments measured a hole concentration of 1.3 × 1019 cm-3. These results from photoelectrochemical measurements allow us to design prototype ultraviolet (UV) light-emitting diodes (LEDs) incorporating the AlGaN quantum-disks-in-nanowire and an optimized p-type AlGaN contact layer for UV-transparency. The ∼335 nm LEDs exhibited a low turn-on voltage of 5 V with a series resistance of 32 Ω, due to the efficient p-type doping of the AlGaN nanowires. The bias-dependent Raman measurements further revealed the negligible self-heating of devices. This study provides an attractive solution to evaluate the electrical properties of AlGaN, which is applicable to other wide bandgap nanostructures. Our results are expected to open doors to new applications for wide and ultra-wide bandgap materials.

A low-voltage sense amplifier with two-stage operational amplifier clamping for flash memory

NASA Astrophysics Data System (ADS)

Guo, Jiarong

2017-04-01

A low-voltage sense amplifier with reference current generator utilizing two-stage operational amplifier clamp structure for flash memory is presented in this paper, capable of operating with minimum supply voltage at 1 V. A new reference current generation circuit composed of a reference cell and a two-stage operational amplifier clamping the drain pole of the reference cell is used to generate the reference current, which avoids the threshold limitation caused by current mirror transistor in the traditional sense amplifier. A novel reference voltage generation circuit using dummy bit-line structure without pull-down current is also adopted, which not only improves the sense window enhancing read precision but also saves power consumption. The sense amplifier was implemented in a flash realized in 90 nm flash technology. Experimental results show the access time is 14.7 ns with power supply of 1.2 V and slow corner at 125 °C. Project supported by the National Natural Science Fundation of China (No. 61376028).

Enhanced fill factor of tandem organic solar cells incorporating a diketopyrrolopyrrole-based low-bandgap polymer and optimized interlayer.

PubMed

Wang, Dong Hwan; Kyaw, Aung Ko Ko; Park, Jong Hyeok

2015-01-01

We demonstrate that reproducible results can be obtained from tandem solar cells based on the wide-bandgap poly[N-9'-heptadecanyl-2,7-carbazole-alt-5,5-(4,7-di-2-thienyl-2',1',3'-benzothiadiazole] (PCDTBT) and the diketopyrrolopyrrole (DPP)-based narrow bandgap polymer (DT-PDPP2T-TT) with a decyltetradecyl (DT) and an electron-rich 2,5-di-2-thienylthieno[3,2-b]thiophene (2T-TT) group fabricated using an optimized interlayer (ZnO NPs/ph-n-PEDOT:PSS) [NPs: nanoparticles; ph-n: pH-neutral PEDOT: poly(3,4-ethylenedioxythiophene); PSS: polystyrene sulfonate]. The tandem cells are fabricated by applying a simple process without thermal annealing. The ZnO NP interlayer operates well when the ZnO NPs are dispersed in 2-methoxyethanol, as no precipitation and chemical reactions occur. In addition to the ZnO NP film, we used neutral PEDOT:PSS as a second interlayer which is not affect to the sequential deposited bulk heterojunction (BHJ) active layer of acidification. The power conversion efficiency (PCE) of a tandem device reaches 7.4 % (open-circuit voltage VOC =1.53 V, short-circuit current density JSC =7.3 mA cm(-2) , and fill factor FF=67 %). Furthermore, FF is increased to up to 71 % when another promising large bandgap (bandgap ∼1.94 eV) polymer (PBnDT-FTAZ) is used. The surface of each layer with nanoscale morphology (BHJ1/ZnO NPs film/ph-n-PEDOT:PSS/BHJ2) was examined by means of AFM analysis during sequential processing. The combination of these factors, efficient DPP-based narrow bandgap material and optimized interlayer, leads to the high FF (average approaches 70 %) and reproducibly operating tandem BHJ solar cells. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

InGaP Heterojunction Barrier Solar Cells

NASA Technical Reports Server (NTRS)

Welser, Roger E. (Inventor)

2014-01-01

A new solar cell structure called a heterojunction barrier solar cell is described. As with previously reported quantum-well and quantum-dot solar cell structures, a layer of narrow band-gap material, such as GaAs or indium-rich InGaP, is inserted into the depletion region of a wide band-gap PN junction. Rather than being thin, however, the layer of narrow band-gap material is about 400-430 nm wide and forms a single, ultrawide well in the depletion region. Thin (e.g., 20-50 nm), wide band-gap InGaP barrier layers in the depletion region reduce the diode dark current. Engineering the electric field and barrier profile of the absorber layer, barrier layer, and p-type layer of the PN junction maximizes photogenerated carrier escape. This new twist on nanostructured solar cell design allows the separate optimization of current and voltage to maximize conversion efficiency.

Fano resonance in anodic aluminum oxide based photonic crystals.

PubMed

Shang, Guo Liang; Fei, Guang Tao; Zhang, Yao; Yan, Peng; Xu, Shao Hui; Ouyang, Hao Miao; Zhang, Li De

2014-01-08

Anodic aluminum oxide based photonic crystals with periodic porous structure have been prepared using voltage compensation method. The as-prepared sample showed an ultra-narrow photonic bandgap. Asymmetric line-shape profiles of the photonic bandgaps have been observed, which is attributed to Fano resonance between the photonic bandgap state of photonic crystal and continuum scattering state of porous structure. And the exhibited Fano resonance shows more clearly when the sample is saturated ethanol gas than air-filled. Further theoretical analysis by transfer matrix method verified these results. These findings provide a better understanding on the nature of photonic bandgaps of photonic crystals made up of porous materials, in which the porous structures not only exist as layers of effective-refractive-index material providing Bragg scattering, but also provide a continuum light scattering state to interact with Bragg scattering state to show an asymmetric line-shape profile.

Simple programmable voltage reference for low frequency noise measurements

NASA Astrophysics Data System (ADS)

Ivanov, V. E.; Chye, En Un

2018-05-01

The paper presents a circuit design of a low-noise voltage reference based on an electric double-layer capacitor, a microcontroller and a general purpose DAC. A large capacitance value (1F and more) makes it possible to create low-pass filter with a large time constant, effectively reducing low-frequency noise beyond its bandwidth. Choosing the optimum value of the resistor in the RC filter, one can achieve the best ratio between the transient time, the deviation of the output voltage from the set point and the minimum noise cut-off frequency. As experiments have shown, the spectral density of the voltage at a frequency of 1 kHz does not exceed 1.2 nV/√Hz the maximum deviation of the output voltage from the predetermined does not exceed 1.4 % and depends on the holding time of the previous value. Subsequently, this error is reduced to a constant value and can be compensated.

Method for the growth of large low-defect single crystals

NASA Technical Reports Server (NTRS)

Powell, J. Anthony (Inventor); Neudeck, Philip G. (Inventor); Trunek, Andrew J. (Inventor); Spry, David J. (Inventor)

2008-01-01

A method and the benefits resulting from the product thereof are disclosed for the growth of large, low-defect single-crystals of tetrahedrally-bonded crystal materials. The process utilizes a uniquely designed crystal shape whereby the direction of rapid growth is parallel to a preferred crystal direction. By establishing several regions of growth, a large single crystal that is largely defect-free can be grown at high growth rates. This process is particularly suitable for producing products for wide-bandgap semiconductors, such as SiC, GaN, AlN, and diamond. Large low-defect single crystals of these semiconductors enable greatly enhanced performance and reliability for applications involving high power, high voltage, and/or high temperature operating conditions.

Robust Control of Wide Bandgap Power Electronics Device Enabled Smart Grid

NASA Astrophysics Data System (ADS)

Yao, Tong

In recent years, wide bandgap (WBG) devices enable power converters with higher power density and higher efficiency. On the other hand, smart grid technologies are getting mature due to new battery technology and computer technology. In the near future, the two technologies will form the next generation of smart grid enabled by WBG devices. This dissertation deals with two applications: silicon carbide (SiC) device used for medium voltage level interface (7.2 kV to 240 V) and gallium nitride (GaN) device used for low voltage level interface (240 V/120 V). A 20 kW solid state transformer (SST) is designed with 6 kHz switching frequency SiC rectifier. Then three robust control design methods are proposed for each of its smart grid operation modes. In grid connected mode, a new LCL filter design method is proposed considering grid voltage THD, grid current THD and current regulation loop robust stability with respect to the grid impedance change. In grid islanded mode, micro synthesis method combined with variable structure control is used to design a robust controller for grid voltage regulation. For grid emergency mode, multivariable controller designed using Hinfinity synthesis method is proposed for accurate power sharing. Controller-hardware-in-the-loop (CHIL) testbed considering 7-SST system is setup with Real Time Digital Simulator (RTDS). The real TMS320F28335 DSP and Spartan 6 FPGA control board is used to interface a switching model SST in RTDS. And the proposed control methods are tested. For low voltage level application, a 3.3 kW smart grid hardware is built with 3 GaN inverters. The inverters are designed with the GaN device characterized using the proposed multi-function double pulse tester. The inverter is controlled by onboard TMS320F28379D dual core DSP with 200 kHz sampling frequency. Each inverter is tested to process 2.2 kW power with overall efficiency of 96.5 % at room temperature. The smart grid monitor system and fault interrupt devices (FID) based on Arduino Mega2560 are built and tested. The smart grid cooperates with GaN inverters through CAN bus communication. At last, the three GaN inverters smart grid achieved the function of grid connected to islanded mode smooth transition.

Design and modeling of an SJ infrared solar cell approaching upper limit of theoretical efficiency

NASA Astrophysics Data System (ADS)

Sahoo, G. S.; Mishra, G. P.

2018-01-01

Recent trends of photovoltaics account for the conversion efficiency limit making them more cost effective. To achieve this we have to leave the golden era of silicon cell and make a path towards III-V compound semiconductor groups to take advantages like bandgap engineering by alloying these compounds. In this work we have used a low bandgap GaSb material and designed a single junction (SJ) cell with a conversion efficiency of 32.98%. SILVACO ATLAS TCAD simulator has been used to simulate the proposed model using both Ray Tracing and Transfer Matrix Method (under 1 sun and 1000 sun of AM1.5G spectrum). A detailed analyses of photogeneration rate, spectral response, potential developed, external quantum efficiency (EQE), internal quantum efficiency (IQE), short-circuit current density (JSC), open-circuit voltage (VOC), fill factor (FF) and conversion efficiency (η) are discussed. The obtained results are compared with previously reported SJ solar cell reports.

p- to n-type conductivity transition in 1.0 eV GaInNAs solar cells controlled by the V/III ratio

DOE Office of Scientific and Technical Information (OSTI.GOV)

Langer, Fabian, E-mail: fabian.langer@physik.uni-wuerzburg.de; Perl, Svenja; Kamp, Martin

2015-02-09

In this work, we report a p- to n-type conductivity transition of GaInNAs (1.0 eV bandgap) layers in p-i-n dilute nitride solar cells continuously controlled by the V/III ratio during growth. Near the transition region, we were able to produce GaInNAs layers with very low effective electrically active doping concentrations resulting in wide depleted areas. We obtained internal quantum efficiencies (IQEs) up to 85% at 0.2 eV above the bandgap. However, the high IQE comes along with an increased dark current density resulting in a decreased open circuit voltage of about 0.2 V. This indicates the formation of non-radiant defect centers related tomore » the p-type to n-type transition. Rapid-thermal annealing of the solar cells on the one hand helps to anneal some of these defects but on the other hand increases the effective doping concentrations.« less

Photo-manipulated photonic bandgap devices based on optically tristable chiral-tilted homeotropic nematic liquid crystal.

PubMed

Huang, Kuan-Chung; Hsiao, Yu-Cheng; Timofeev, Ivan V; Zyryanov, Victor Ya; Lee, Wei

2016-10-31

We report on the spectral properties of an optically switchable tristable chiral-tilted homeotropic nematic liquid crystal (LC) incorporated as a tunable defect layer in one-dimensional photonic crystal. By varying the polarization angle of the incident light and modulating the light intensity ratio between UV and green light, various transmission characteristics of the composite were obtained. The hybrid structure realizes photo-tunability in transmission of defect-mode peaks within the photonic bandgap in addition to optical switchability among three distinct sets of defect modes via photoinduced tristable state transitions. Because the fabrication process is easier and less critical in terms of cell parameters or sample preparation conditions and the LC layer itself possesses an extra stable state compared with the previously reported bistable counterpart operating on the basis of biased-voltage dual-frequency switching, it has much superior potential for photonic applications such as a low-power-consumption multichannel filter and an optically controllable intensity modulator.

GaAs nanopillar-array solar cells employing in situ surface passivation

PubMed Central

Mariani, Giacomo; Scofield, Adam C.; Hung, Chung-Hong; Huffaker, Diana L.

2013-01-01

Arrays of III–V direct-bandgap semiconductor nanopillars represent promising photovoltaic candidates due to their inherent high optical absorption coefficients and minimized reflection arising from light trapping, efficient charge collection in the radial direction and the ability to synthesize them on low-cost platforms. However, the increased surface area results in surface states that hamper the power conversion efficiency. Here, we report the first demonstration of GaAs nanopillar-array photovoltaics employing epitaxial passivation with air mass 1.5 global power conversion efficiencies of 6.63%. High-bandgap epitaxial InGaP shells are grown in situ and cap the radial p–n junctions to alleviate surface-state effects. Under light, the photovoltaic devices exhibit open-circuit voltages of 0.44 V, short-circuit current densities of 24.3 mA cm−2 and fill factors of 62% with high external quantum efficiencies >70% across the spectral regime of interest. A novel titanium/indium tin oxide annealed alloy is exploited as transparent ohmic anode. PMID:23422665

Efficient CsF interlayer for high and low bandgap polymer solar cell

NASA Astrophysics Data System (ADS)

Mitul, Abu Farzan; Sarker, Jith; Adhikari, Nirmal; Mohammad, Lal; Wang, Qi; Khatiwada, Devendra; Qiao, Qiquan

2018-02-01

Low bandgap polymer solar cells have a great deal of importance in flexible photovoltaic market to absorb sun light more efficiently. Efficient wide bandgap solar cells are always available in nature to absorb visible photons. The development and incorporation of infrared photovoltaics (IR PV) with wide bandgap solar cells can improve overall solar device performance. Here, we have developed an efficient low bandgap polymer solar cell with CsF as interfacial layer in regular structure. Polymer solar cell devices with CsF shows enhanced performance than Ca as interfacial layer. The power conversion efficiency of 4.5% has been obtained for PDPP3T based polymer solar cell with CsF as interlayer. Finally, an optimal thickness with CsF as interfacial layer has been found to improve the efficiency in low bandgap polymer solar cells.

Tunneling calculations for GaAs-Al(x)Ga(1-x) as graded band-gap sawtooth superlattices. Thesis

NASA Technical Reports Server (NTRS)

Forrest, Kathrine A.; Meijer, Paul H. E.

1991-01-01

Quantum mechanical tunneling calculations for sawtooth (linearly graded band-gap) and step-barrier AlGaAs superlattices were performed by means of a transfer matrix method, within the effective mass approximation. The transmission coefficient and tunneling current versus applied voltage were computed for several representative structures. Particular consideration was given to effective mass variations. The tunneling properties of step and sawtooth superlattices show some qualitative similarities. Both structures exhibit resonant tunneling, however, because they deform differently under applied fields, the J-V curves differ.

Identification of the primary compensating defect level responsible for determining blocking voltage of vertical GaN power diodes

DOE PAGES

King, M. P.; Kaplar, R. J.; Dickerson, J. R.; ...

2016-10-31

Electrical performance and characterization of deep levels in vertical GaN P-i-N diodes grown on low threading dislocation density (~10 4 –10 6 cm –2) bulk GaN substrates are investigated. The lightly doped n drift region of these devices is observed to be highly compensated by several prominent deep levels detected using deep level optical spectroscopy at E c-2.13, 2.92, and 3.2 eV. A combination of steady-state photocapacitance and lighted capacitance-voltage profiling indicates the concentrations of these deep levels to be N t = 3 × 10 12, 2 × 10 15, and 5 × 10 14 cm –3, respectively. Themore » E c-2.92 eV level is observed to be the primary compensating defect in as-grown n-type metal-organic chemical vapor deposition GaN, indicating this level acts as a limiting factor for achieving controllably low doping. The device blocking voltage should increase if compensating defects reduce the free carrier concentration of the n drift region. Understanding the incorporation of as-grown and native defects in thick n-GaN is essential for enabling large V BD in the next-generation wide-bandgap power semiconductor devices. Furthermore, controlling the as-grown defects induced by epitaxial growth conditions is critical to achieve blocking voltage capability above 5 kV.« less

Perovskite oxides for visible-light-absorbing ferroelectric and photovoltaic materials.

PubMed

Grinberg, Ilya; West, D Vincent; Torres, Maria; Gou, Gaoyang; Stein, David M; Wu, Liyan; Chen, Guannan; Gallo, Eric M; Akbashev, Andrew R; Davies, Peter K; Spanier, Jonathan E; Rappe, Andrew M

2013-11-28

Ferroelectrics have recently attracted attention as a candidate class of materials for use in photovoltaic devices, and for the coupling of light absorption with other functional properties. In these materials, the strong inversion symmetry breaking that is due to spontaneous electric polarization promotes the desirable separation of photo-excited carriers and allows voltages higher than the bandgap, which may enable efficiencies beyond the maximum possible in a conventional p-n junction solar cell. Ferroelectric oxides are also stable in a wide range of mechanical, chemical and thermal conditions and can be fabricated using low-cost methods such as sol-gel thin-film deposition and sputtering. Recent work has shown how a decrease in ferroelectric layer thickness and judicious engineering of domain structures and ferroelectric-electrode interfaces can greatly increase the current harvested from ferroelectric absorber materials, increasing the power conversion efficiency from about 10(-4) to about 0.5 per cent. Further improvements in photovoltaic efficiency have been inhibited by the wide bandgaps (2.7-4 electronvolts) of ferroelectric oxides, which allow the use of only 8-20 per cent of the solar spectrum. Here we describe a family of single-phase solid oxide solutions made from low-cost and non-toxic elements using conventional solid-state methods: [KNbO3]1 - x[BaNi1/2Nb1/2O3 - δ]x (KBNNO). These oxides exhibit both ferroelectricity and a wide variation of direct bandgaps in the range 1.1-3.8 electronvolts. In particular, the x = 0.1 composition is polar at room temperature, has a direct bandgap of 1.39 electronvolts and has a photocurrent density approximately 50 times larger than that of the classic ferroelectric (Pb,La)(Zr,Ti)O3 material. The ability of KBNNO to absorb three to six times more solar energy than the current ferroelectric materials suggests a route to viable ferroelectric semiconductor-based cells for solar energy conversion and other applications.

Short-Wave Infrared HgCdTe Electron Avalanche Photodiodes for Gated Viewing

NASA Astrophysics Data System (ADS)

Sieck, A.; Benecke, M.; Eich, D.; Oelmaier, R.; Wendler, J.; Figgemeier, H.

2018-06-01

Short-wave infrared (SWIR) HgCdTe electron avalanche photodiodes (eAPDs) with different doping profiles have been characterized for use in SWIR gated viewing systems. Gated viewing offers enhanced image contrast in scenes with clutter from the foreground or background. HgCdTe-based eAPDs show exponential gain-voltage characteristics and low excess noise and are, therefore, well suited for active imaging applications. The gain achievable at a fixed reverse voltage varies with the bandgap of the Hg1-xCdxTe detector material. We analyze current-voltage and gain-voltage plots measured on SWIR Hg1-xCdxTe eAPDs with x = 0.45, corresponding to a cutoff wavelength of 2.55 μm at 150 K. The cutoff has been chosen as a trade-off between achievable APD gain and operating temperature for SWIR gated-viewing systems with target distances of about 1000 m. Focal plane arrays with a readout-integrated circuit featuring a fast internal clock have been built and their performance with respect to gated viewing applications has been evaluated on a laboratory demonstrator for short distances. Future plans for a field demonstrator for distances up to 1000 m are described briefly at the end.

Adjustable electronic load-alarm relay

DOEpatents

Mason, Charles H.; Sitton, Roy S.

1976-01-01

This invention is an improved electronic alarm relay for monitoring the current drawn by an AC motor or other electrical load. The circuit is designed to measure the load with high accuracy and to have excellent alarm repeatability. Chattering and arcing of the relay contacts are minimal. The operator can adjust the set point easily and can re-set both the high and the low alarm points by means of one simple adjustment. The relay includes means for generating a signal voltage proportional to the motor current. In a preferred form of the invention a first operational amplifier is provided to generate a first constant reference voltage which is higher than a preselected value of the signal voltage. A second operational amplifier is provided to generate a second constant reference voltage which is lower than the aforementioned preselected value of the signal voltage. A circuit comprising a first resistor serially connected to a second resistor is connected across the outputs of the first and second amplifiers, and the junction of the two resistors is connected to the inverting terminal of the second amplifier. Means are provided to compare the aforementioned signal voltage with both the first and second reference voltages and to actuate an alarm if the signal voltage is higher than the first reference voltage or lower than the second reference voltage.

Advanced Materials for High Temperature, High Performance, Wide Bandgap Power Modules

NASA Astrophysics Data System (ADS)

O'Neal, Chad B.; McGee, Brad; McPherson, Brice; Stabach, Jennifer; Lollar, Richard; Liederbach, Ross; Passmore, Brandon

2016-01-01

Advanced packaging materials must be utilized to take full advantage of the benefits of the superior electrical and thermal properties of wide bandgap power devices in the development of next generation power electronics systems. In this manuscript, the use of advanced materials for key packaging processes and components in multi-chip power modules will be discussed. For example, to date, there has been significant development in silver sintering paste as a high temperature die attach material replacement for conventional solder-based attach due to the improved thermal and mechanical characteristics as well as lower processing temperatures. In order to evaluate the bond quality and performance of this material, shear strength, thermal characteristics, and void quality for a number of silver sintering paste materials were analyzed as a die attach alternative to solder. In addition, as high voltage wide bandgap devices shift from engineering samples to commercial components, passivation materials become key in preventing premature breakdown in power modules. High temperature, high dielectric strength potting materials were investigated to be used to encapsulate and passivate components internal to a power module. The breakdown voltage up to 30 kV and corresponding leakage current for these materials as a function of temperature is also presented. Lastly, high temperature plastic housing materials are important for not only discrete devices but also for power modules. As the operational temperature of the device and/or ambient temperature increases, the mechanical strength and dielectric properties are dramatically reduced. Therefore, the electrical characteristics such as breakdown voltage and leakage current as a function of temperature for housing materials are presented.

Carrier-injection studies in GaN-based light-emitting-diodes

NASA Astrophysics Data System (ADS)

Nguyen, Dinh Chuong; Vaufrey, David; Leroux, Mathieu

2015-09-01

Although p-type GaN has been achieved by Mg doping, the low hole-mobility still remains a difficulty for GaN-based light-emitting diodes (LEDs). Due to the lack of field-dependent-velocity model for holes, in GaN-based LED simulations, the hole mobility is usually supposed to remain constant. However, as the p-GaN-layer conductivity is lower than the n-GaN-layer conductivity, a strong electric-field exists in the p-side of an LED when the applied voltage exceeds the LED's built-in voltage. Under the influence of this field, the mobilities of electrons and holes are expected to decrease. Based on a field-dependent-velocity model that is usually used for narrow-bandgap materials, an LED structure is modelled with three arbitrarily chosen hole saturation-velocities. The results show that a hole saturation-velocity lower than 4x106 cm/s can negatively affect the LED's behaviors.

DOE Office of Scientific and Technical Information (OSTI.GOV)

King, M. P.; Kaplar, R. J.; Dickerson, J. R.

Electrical performance and characterization of deep levels in vertical GaN P-i-N diodes grown on low threading dislocation density (~10 4 –10 6 cm –2) bulk GaN substrates are investigated. The lightly doped n drift region of these devices is observed to be highly compensated by several prominent deep levels detected using deep level optical spectroscopy at E c-2.13, 2.92, and 3.2 eV. A combination of steady-state photocapacitance and lighted capacitance-voltage profiling indicates the concentrations of these deep levels to be N t = 3 × 10 12, 2 × 10 15, and 5 × 10 14 cm –3, respectively. Themore » E c-2.92 eV level is observed to be the primary compensating defect in as-grown n-type metal-organic chemical vapor deposition GaN, indicating this level acts as a limiting factor for achieving controllably low doping. The device blocking voltage should increase if compensating defects reduce the free carrier concentration of the n drift region. Understanding the incorporation of as-grown and native defects in thick n-GaN is essential for enabling large V BD in the next-generation wide-bandgap power semiconductor devices. Furthermore, controlling the as-grown defects induced by epitaxial growth conditions is critical to achieve blocking voltage capability above 5 kV.« less

Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications

PubMed Central

Kawarada, Hiroshi; Yamada, Tetsuya; Xu, Dechen; Tsuboi, Hidetoshi; Kitabayashi, Yuya; Matsumura, Daisuke; Shibata, Masanobu; Kudo, Takuya; Inaba, Masafumi; Hiraiwa, Atsushi

2017-01-01

Complementary power field effect transistors (FETs) based on wide bandgap materials not only provide high-voltage switching capability with the reduction of on-resistance and switching losses, but also enable a smart inverter system by the dramatic simplification of external circuits. However, p-channel power FETs with equivalent performance to those of n-channel FETs are not obtained in any wide bandgap material other than diamond. Here we show that a breakdown voltage of more than 1600 V has been obtained in a diamond metal-oxide-semiconductor (MOS) FET with a p-channel based on a two-dimensional hole gas (2DHG). Atomic layer deposited (ALD) Al2O3 induces the 2DHG ubiquitously on a hydrogen-terminated (C-H) diamond surface and also acts as both gate insulator and passivation layer. The high voltage performance is equivalent to that of state-of-the-art SiC planar n-channel FETs and AlGaN/GaN FETs. The drain current density in the on-state is also comparable to that of these two FETs with similar device size and VB. PMID:28218234

Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications.

PubMed

Kawarada, Hiroshi; Yamada, Tetsuya; Xu, Dechen; Tsuboi, Hidetoshi; Kitabayashi, Yuya; Matsumura, Daisuke; Shibata, Masanobu; Kudo, Takuya; Inaba, Masafumi; Hiraiwa, Atsushi

2017-02-20

Complementary power field effect transistors (FETs) based on wide bandgap materials not only provide high-voltage switching capability with the reduction of on-resistance and switching losses, but also enable a smart inverter system by the dramatic simplification of external circuits. However, p-channel power FETs with equivalent performance to those of n-channel FETs are not obtained in any wide bandgap material other than diamond. Here we show that a breakdown voltage of more than 1600 V has been obtained in a diamond metal-oxide-semiconductor (MOS) FET with a p-channel based on a two-dimensional hole gas (2DHG). Atomic layer deposited (ALD) Al 2 O 3 induces the 2DHG ubiquitously on a hydrogen-terminated (C-H) diamond surface and also acts as both gate insulator and passivation layer. The high voltage performance is equivalent to that of state-of-the-art SiC planar n-channel FETs and AlGaN/GaN FETs. The drain current density in the on-state is also comparable to that of these two FETs with similar device size and V B .

Franz-Keldysh effect in GeSn pin photodetectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oehme, M., E-mail: oehme@iht.uni-stuttgart.de; Kostecki, K.; Schmid, M.

2014-04-21

The optical properties and the Franz-Keldysh effect at the direct band gap of GeSn alloys with Sn concentrations up to 4.2% at room temperature were investigated. The GeSn material was embedded in the intrinsic region of a Ge heterojunction photodetector on Si substrates. The layer structure was grown by means of ultra-low temperature molecular beam epitaxy. The absorption coefficient as function of photon energy and the direct bandgap energies were determined. In all investigated samples, the Franz-Keldysh effect can be observed. A maximum absorption ratio of 1.5 was determined for 2% Sn for a voltage swing of 3 V.

Ultra-low power high temperature and radiation hard complementary metal-oxide-semiconductor (CMOS) silicon-on-insulator (SOI) voltage reference.

PubMed

Boufouss, El Hafed; Francis, Laurent A; Kilchytska, Valeriya; Gérard, Pierre; Simon, Pascal; Flandre, Denis

2013-12-13

This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI) industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of -40-200 °C and for different process corners. Robustness to radiation was simulated using custom model parameters including TID effects, such as mobilities and threshold voltages degradation. The proposed circuit has been tested up to high total radiation dose, i.e., 1 Mrad (Si) performed at three different temperatures (room temperature, 100 °C and 200 °C). The maximum drift of the reference voltage V(REF) depends on the considered temperature and on radiation dose; however, it remains lower than 10% of the mean value of 1.5 V. The typical power dissipation at 2.5 V supply voltage is about 20 μW at room temperature and only 75 μW at a high temperature of 200 °C. To understand the effects caused by the combination of high total ionizing dose and temperature on such voltage reference, the threshold voltages of the used SOI MOSFETs were extracted under different conditions. The evolution of V(REF) and power consumption with temperature and radiation dose can then be explained in terms of the different balance between fixed oxide charge and interface states build-up. The total occupied area including pad-ring is less than 0.09 mm2.

Pathway to 50% efficient inverted metamorphic concentrator solar cells

NASA Astrophysics Data System (ADS)

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil; Schulte, Kevin L.; France, Ryan M.; McMahon, William E.; Perl, Emmett E.; Horowitz, Kelsey A. W.; Friedman, Daniel J.

2017-09-01

Series-connected five (5J) and six junction (6J) concentrator solar cell strategies have the realistic potential to exceed 50% efficiency to enable low-cost CPV systems. We propose three strategies for developing a practical 6J device. We have overcome many of the challenges required to build such concentrator solar cell devices: We have developed 2.1 eV AlGaInP, 1.7 eV AlGaAs, and 1.7 eV GaInAsP junctions with external radiative efficiency greater than 0.1%. We have developed a transparent tunnel junction that absorbs minimal light intended for the second junction yet resists degradation under thermal load. We have developed metamorphic grades from the GaAs to the InP lattice constant that are transparent to sub-GaAs bandgap light. We have grown and compared low bandgap junctions (0.7eV - 1.2 eV) using metamorphic GaInAs, metamorphic GaInAsP, and GaInAsP lattice-matched to InP. And finally, we have demonstrated excellent performance in a high voltage, low current 4 junction inverted metamorphic device using 2.1, 1.7, 1.4, and 1.1 eV junctions with over 8.7 mA/cm2 one-sun current density that operates up to 1000 suns without tunnel junction failure.

Pathway to 50% Efficient Inverted Metamorphic Concentrator Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geisz, John F; Steiner, Myles A; Jain, Nikhil

Series-connected five (5J) and six junction (6J) concentrator solar cell strategies have the realistic potential to exceed 50% efficiency to enable low-cost CPV systems. We propose three strategies for developing a practical 6J device. We have overcome many of the challenges required to build such concentrator solar cell devices: We have developed 2.1 eV AlGaInP, 1.7 eV AlGaAs, and 1.7 eV GaInAsP junctions with external radiative efficiency greater than 0.1%. We have developed a transparent tunnel junction that absorbs minimal light intended for the second junction yet resists degradation under thermal load. We have developed metamorphic grades from the GaAsmore » to the InP lattice constant that are transparent to sub-GaAs bandgap light. We have grown and compared low bandgap junctions (0.7eV - 1.2 eV) using metamorphic GaInAs, metamorphic GaInAsP, and GaInAsP lattice-matched to InP. And finally, we have demonstrated excellent performance in a high voltage, low current 4 junction inverted metamorphic device using 2.1, 1.7, 1.4, and 1.1 eV junctions with over 8.7 mA/cm2 one-sun current density that operates up to 1000 suns without tunnel junction failure.« less

Unraveling the High Open Circuit Voltage and High Performance of Integrated Perovskite/Organic Bulk-Heterojunction Solar Cells.

PubMed

Dong, Shiqi; Liu, Yongsheng; Hong, Ziruo; Yao, Enping; Sun, Pengyu; Meng, Lei; Lin, Yuze; Huang, Jinsong; Li, Gang; Yang, Yang

2017-08-09

We have demonstrated high-performance integrated perovskite/bulk-heterojunction (BHJ) solar cells due to the low carrier recombination velocity, high open circuit voltage (V OC ), and increased light absorption ability in near-infrared (NIR) region of integrated devices. In particular, we find that the V OC of the integrated devices is dominated by (or pinned to) the perovskite cells, not the organic photovoltaic cells. A Quasi-Fermi Level Pinning Model was proposed to understand the working mechanism and the origin of the V OC of the integrated perovskite/BHJ solar cell, which following that of the perovskite solar cell and is much higher than that of the low bandgap polymer based organic BHJ solar cell. Evidence for the model was enhanced by examining the charge carrier behavior and photovoltaic behavior of the integrated devices under illumination of monochromatic light-emitting diodes at different characteristic wavelength. This finding shall pave an interesting possibility for integrated photovoltaic devices to harvest low energy photons in NIR region and further improve the current density without sacrificing V OC , thus providing new opportunities and significant implications for future industry applications of this kind of integrated solar cells.

Theoretical evaluation of maximum electric field approximation of direct band-to-band tunneling Kane model for low bandgap semiconductors

NASA Astrophysics Data System (ADS)

Dang Chien, Nguyen; Shih, Chun-Hsing; Hoa, Phu Chi; Minh, Nguyen Hong; Thi Thanh Hien, Duong; Nhung, Le Hong

2016-06-01

The two-band Kane model has been popularly used to calculate the band-to-band tunneling (BTBT) current in tunnel field-effect transistor (TFET) which is currently considered as a promising candidate for low power applications. This study theoretically clarifies the maximum electric field approximation (MEFA) of direct BTBT Kane model and evaluates its appropriateness for low bandgap semiconductors. By analysing the physical origin of each electric field term in the Kane model, it has been elucidated in the MEFA that the local electric field term must be remained while the nonlocal electric field terms are assigned by the maximum value of electric field at the tunnel junction. Mathematical investigations have showed that the MEFA is more appropriate for low bandgap semiconductors compared to high bandgap materials because of enhanced tunneling probability in low field regions. The appropriateness of the MEFA is very useful for practical uses in quickly estimating the direct BTBT current in low bandgap TFET devices.

Performance evaluation of electro-optic effect based graphene transistors

NASA Astrophysics Data System (ADS)

Gupta, Gaurav; Abdul Jalil, Mansoor Bin; Yu, Bin; Liang, Gengchiau

2012-09-01

Despite the advantages afforded by the unique electronic properties of graphene, the absence of a bandgap has limited its applicability in logic devices. This has led to a study on electro-optic behavior in graphene for novel device operations, beyond the conventional field effect, to meet the requirements of ultra-low power and high-speed logic transistors. Recently, two potential designs have been proposed to leverage on this effect and open a virtual bandgap for ballistic transport in the graphene channel. The first one implements a barrier in the centre of the channel, whereas the second incorporates a tilted gate junction. In this paper, we computationally evaluate the relative device performance of these two designs, in terms of subthreshold slope (SS) and ION/IOFF ratio under different temperature and voltage bias, for a defect-free graphene channel. Our calculations employ pure optical modeling for low field electron transport under the constraints of device anatomy. The calculated results show that the two designs are functionally similar and are able to provide SS smaller than 60 mV per decade. Both designs show similar device performance but marginally top one another under different operating constraints. Our results could serve as a guide to circuit designers in selecting an appropriate design as per their system specifications and requirements.

Performance evaluation of electro-optic effect based graphene transistors.

PubMed

Gupta, Gaurav; Jalil, Mansoor Bin Abdul; Yu, Bin; Liang, Gengchiau

2012-10-21

Despite the advantages afforded by the unique electronic properties of graphene, the absence of a bandgap has limited its applicability in logic devices. This has led to a study on electro-optic behavior in graphene for novel device operations, beyond the conventional field effect, to meet the requirements of ultra-low power and high-speed logic transistors. Recently, two potential designs have been proposed to leverage on this effect and open a virtual bandgap for ballistic transport in the graphene channel. The first one implements a barrier in the centre of the channel, whereas the second incorporates a tilted gate junction. In this paper, we computationally evaluate the relative device performance of these two designs, in terms of subthreshold slope (SS) and I(ON)/I(OFF) ratio under different temperature and voltage bias, for a defect-free graphene channel. Our calculations employ pure optical modeling for low field electron transport under the constraints of device anatomy. The calculated results show that the two designs are functionally similar and are able to provide SS smaller than 60 mV per decade. Both designs show similar device performance but marginally top one another under different operating constraints. Our results could serve as a guide to circuit designers in selecting an appropriate design as per their system specifications and requirements.

Membrane reference electrode

DOEpatents

Redey, L.; Bloom, I.D.

1988-01-21

A reference electrode utilizes a small thin, flat membrane of a highly conductive glass placed on a small diameter insulator tube having a reference material inside in contact with an internal voltage lead. When the sensor is placed in a non-aqueous ionic electrolytic solution, the concentration difference across the glass membrane generates a low voltage signal in precise relationship to the concentration of the species to be measured, with high spatial resolution. 2 figs.

Contact and Bandgap Engineering in Two Dimensional Crystal

NASA Astrophysics Data System (ADS)

Chu, Tao

At the heart of semiconductor research, bandgap is one of the key parameters for materials and determine their applications in modern technologies. For traditional bulk semiconductors, the bandgap is determined by the chemical composition and specific arrangement of the crystal lattices, and usually invariant during the device operation. Nevertheless, it is highly desirable for many optoelectronic and electronic applications to have materials with continuously tunable bandgap available. In the past decade, 2D layered materials including graphene and transition metal dichalcogenides (TMDs) have sparked interest in the scientific community, owing to their unique material properties and tremendous potential in various applications. Among many newly discovered properties that are non-existent in bulk materials, the strong in-plane bonding and weak van der Waals inter-planar interaction in these 2D layered structures leads to a widely tunable bandgap by electric field. This provides an extra knob to engineer the fundamental material properties and open a new design space for novel device operation. This thesis focuses on this field controlled dynamic bandgap and can be divided into three parts: (1) bilayer graphene is the first known 2D crystal with a bandgap can be continuously tuned by electric field. However, the electrical transport bandgaps is much smaller than both theoretical predictions and extracted bandgaps from optical measurements. In the first part of the thesis, the limiting factors of preventing achieving a large transport bandgap in bilayer graphene are investigated and different strategies to achieve a large transport bandgap are discussed, including the vertically scaling of gate oxide and patterning channel into ribbon structure. With a record large transport bandgap of ~200meV, a dual-gated semiconducting bilayer graphene P/N junction with extremely scaled gap of 20nm in-between is fabricated. A tunable local maxima feature, associated with 1D vHs DOS at the band edge of bilayer graphene, was experimentally observed in transport for the first time. (2) The bandgap of bilayer MoS2 is also predicted to be continuously tuned to zero by applying a perpendicular electric field. Here, the first experimental realization of tuning the bandgap of bilayer MoS2 by a vertical electric field is presented. An analytical approach utilizing the threshold voltages from ambipolar characteristics is employed to quantitatively extract bandgaps, which is further benchmarked by temperature dependent bandgap measurements and photoluminescence measurements. (3) Few layer graphene is employed as an example to demonstrate a novel self-aligned edge contacting scheme for layered material systems.

Drying temperature effects on electrical and optical properties of poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) thin film

NASA Astrophysics Data System (ADS)

Azhar, N. E. A.; Affendi, I. H. H.; Shafura, A. K.; Shariffudin, S. S.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

2016-07-01

Temperature effects on electrical and optical properties of a representative semiconducting polymer, poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV), has recently attracted much attention. The MEH-PPV thin films were deposited at different drying temperature (anneal temperature) using spin-coating technique. The spin coating technique was used to produce uniform film onto large area. The MEH-PPV was dissolved in toluene solution to exhibits different optical and electrical properties. The absorption coefficient and bandgap was measured using UV-Visible-NIR (UV-VIS-NIR). The bandgap of MEH-PPV was effect by the thickness of thin films. For electrical properties, two-point probe was used to characterize the current-voltage measurement. The current-voltage measurement shows that the MEH-PPV thin films become more conductive at high temperature. This study will provide better performance and suitable for optoelectronic device especially OLEDs applications.

Drying temperature effects on electrical and optical properties of poly[2-methoxy-5-(2’-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Azhar, N. E. A., E-mail: najwaezira@yahoo.com; Affendi, I. H. H., E-mail: irmahidayanti.halim@gmail.com; Shafura, A. K., E-mail: shafura@ymail.com

Temperature effects on electrical and optical properties of a representative semiconducting polymer, poly[2-methoxy-5-(2’-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV), has recently attracted much attention. The MEH-PPV thin films were deposited at different drying temperature (anneal temperature) using spin-coating technique. The spin coating technique was used to produce uniform film onto large area. The MEH-PPV was dissolved in toluene solution to exhibits different optical and electrical properties. The absorption coefficient and bandgap was measured using UV-Visible-NIR (UV-VIS-NIR). The bandgap of MEH-PPV was effect by the thickness of thin films. For electrical properties, two-point probe was used to characterize the current-voltage measurement. The current-voltage measurement showsmore » that the MEH-PPV thin films become more conductive at high temperature. This study will provide better performance and suitable for optoelectronic device especially OLEDs applications.« less

Magneto-ballistic transport in GaN nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Santoruvo, Giovanni, E-mail: giovanni.santoruvo@epfl.ch; Allain, Adrien; Ovchinnikov, Dmitry

2016-09-05

The ballistic filtering property of nanoscale crosses was used to investigate the effect of perpendicular magnetic fields on the ballistic transport of electrons on wide band-gap GaN heterostructures. The straight scattering-less trajectory of electrons was modified by a perpendicular magnetic field which produced a strong non-linear behavior in the measured output voltage of the ballistic filters and allowed the observation of semi-classical and quantum effects, such as quenching of the Hall resistance and manifestation of the last plateau, in excellent agreement with the theoretical predictions. A large measured phase coherence length of 190 nm allowed the observation of universal quantum fluctuationsmore » and weak localization of electrons due to quantum interference up to ∼25 K. This work also reveals the prospect of wide band-gap GaN semiconductors as a platform for basic transport and quantum studies, whose properties allow the investigation of ballistic transport and quantum phenomena at much larger voltages and temperatures than in other semiconductors.« less

The effects of deep level traps on the electrical properties of semi-insulating CdZnTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zha, Gangqiang; Yang, Jian; Xu, Lingyan

2014-01-28

Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy E{sub t} can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance canmore » be explained using the deep trap model.« less

Holmium hafnate: An emerging electronic device material

NASA Astrophysics Data System (ADS)

Pavunny, Shojan P.; Sharma, Yogesh; Kooriyattil, Sudheendran; Dugu, Sita; Katiyar, Rajesh K.; Scott, James F.; Katiyar, Ram S.

2015-03-01

We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho2Hf2O7 (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of ˜20 and very low dielectric loss of ˜0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap Eg of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices.

Shift current bulk photovoltaic effect in polar materials—hybrid and oxide perovskites and beyond

DOE PAGES

Tan, Liang Z.; Zheng, Fan; Young, Steve M.; ...

2016-08-26

Here, the bulk photovoltaic effect (BPVE) refers to the generation of a steady photocurrent and above-bandgap photovoltage in a single-phase homogeneous material lacking inversion symmetry. The mechanism of BPVE is decidedly different from the typical p–n junction-based photovoltaic mechanism in heterogeneous materials. Recently, there has been renewed interest in ferroelectric materials for solar energy conversion, inspired by the discovery of above-bandgap photovoltages in ferroelectrics, the invention of low bandgap ferroelectric materials and the rapidly improving power conversion efficiency of metal halide perovskites. However, as long as the nature of the BPVE and its dependence on composition and structure remain poorlymore » understood, materials engineering and the realisation of its true potential will be hampered. In this review article, we survey the history, development and recent progress in understanding the mechanisms of BPVE, with a focus on the shift current mechanism, an intrinsic BPVE that is universal to all materials lacking inversion symmetry. In addition to explaining the theory of shift current, materials design opportunities and challenges will be discussed for future applications of the BPVE.« less

Wide-bandgap epitaxial heterojunction windows for silicon solar cells

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.; Loferski, Joseph J.; Beaulieu, Roland; Sekula-Moise, Patricia A.; Vernon, Stanley M.

1990-01-01

It is shown that the efficiency of a solar cell can be improved if minority carriers are confined by use of a wide-bandgap heterojunction window. For silicon (lattice constant a = 5.43 A), nearly lattice-matched wide-bandgap materials are ZnS (a = 5.41 A) and GaP (a = 5.45 A). Isotype n-n heterojuntions of both ZnS/Si and GaP/Si were grown on silicon n-p homojunction solar cells. Successful deposition processes used were metalorganic chemical vapor deposition (MO-CVD) for GaP and ZnS, and vacuum evaporation of ZnS. Planar (100) and (111) and texture-etched - (111)-faceted - surfaces were used. A decrease in minority-carrier surface recombination compared to a bare surface was seen from increased short-wavelength spectral response, increased open-circuit voltage, and reduced dark saturation current, with no degradation of the minority carrier diffusion length.

Plasma-Enhanced Pulsed Laser Deposition of Wide Bandgap Nitrides for Space Power Applications

NASA Technical Reports Server (NTRS)

Triplett, G. E., Jr.; Durbin, S. M.

2004-01-01

The need for a reliable, inexpensive technology for small-scale space power applications where photovoltaic or chemical battery approaches are not feasible has prompted renewed interest in radioisotope-based energy conversion devices. Although a number of devices have been developed using a variety of semiconductors, the single most limiting factor remains the overall lifetime of the radioisotope battery. Recent advances in growth techniques for ultra-wide bandgap III-nitride semiconductors provide the means to explore a new group of materials with the promise of significant radiation resistance. Additional benefits resulting from the use of ultra-wide bandgap materials include a reduction in leakage current and higher operating voltage without a loss of energy transfer efficiency. This paper describes the development of a novel plasma-enhanced pulsed laser deposition system for the growth of cubic boron nitride semiconducting thin films, which will be used to construct pn junction devices for alphavoltaic applications.

The Role of FRET in Non-Fullerene Organic Solar Cells: Implications for Molecular Design.

PubMed

Gautam, Bhoj R; Younts, Robert; Carpenter, Joshua; Ade, Harald; Gundogdu, Kenan

2018-04-19

Non-fullerene acceptors (NFAs) have been demonstrated to be promising candidates for highly efficient organic photovoltaic (OPV) devices. The tunability of absorption characteristics of NFAs can be used to make OPVs with complementary donor-acceptor absorption to cover a broad range of the solar spectrum. However, both charge transfer from donor to acceptor moieties and energy (energy) transfer from high-bandgap to low-bandgap materials are possible in such structures. Here, we show that when charge transfer and exciton transfer processes are both present, the coexistence of excitons in both domains can cause a loss mechanism. Charge separation of excitons in a low-bandgap material is hindered due to exciton population in the larger bandgap acceptor domains. Our results further show that excitons in low-bandgap material should have a relatively long lifetime compared to the transfer time of excitons from higher bandgap material in order to contribute to the charge separation. These observations provide significant guidance for design and development of new materials in OPV applications.

Synthesis and Characterization of Methylammonium Lead Iodide Perovskite and its Application in Planar Hetero-junction Devices

NASA Astrophysics Data System (ADS)

Upadhyaya, Aditi; Mohan Singh Negi, Chandra; Yadav, Anjali; Gupta, Saral K.; Singh Verma, Ajay

2018-06-01

The present paper reports on the synthesis and characterization of methylammonium lead iodide perovskite thin film and its applications in heterojunction devices. Perovskite thin films were deposited by a simple spin-coating method using a precursor solution including methyl ammonium iodide and lead iodide onto a glass substrate. The surface morphology study via field emission scanning electron microscopy of the perovskite thin film shows complete surface coverage on glass substrate with negligible pin-holes. UV–visible spectroscopy study revealed a broad absorption range and the exhibition of a band-gap of 1.6 eV. The dark current-voltage (I–V) characteristics of all the devices under study show rectifying behaviour similar to the Schottky diode. Various device parameters such as ideality factor and barrier height are extracted from the I–V curve. At low voltages the devices exhibit Ohmic behaviour, trap free space charge limited conduction governs the charge transport at an intermediate voltage range, while at much higher voltages the devices show trap controlled space charge limited conduction. Furthermore, impedance spectroscopy measurements enable us to extract the various internal parameters of the devices. Correlations between these parameters and I–V characteristics are discussed. The different capacitive process arising in the devices was discussed using the capacitance versus frequency curve.

A high voltage power supply for the AE-C and D low energy electron experiment

NASA Technical Reports Server (NTRS)

Gillis, J. A.

1974-01-01

A description is given of the electrical and mechanical design and operation of high voltage power supplies for space flight use. The supply was used to generate the spiraltron high voltage for low energy electron experiment on AE-C and D. Two versions of the supply were designed and built; one design is referred to as the low power version (AE-C) and the other as the high power version (AE-D). Performance is discussed under all operating conditions.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Braly, Ian L.; Hillhouse, Hugh W.

The development of stable high-bandgap hybrid perovskites (HPs) with high optoelectronic quality may enable tandem solar cells with power conversion efficiencies approaching 30%. The halide composition of HPs has been observed to effect bandgap, carrier lifetime, and material stability. Here we report optoelectronic quality and stability under illumination of thousands of compositions ranging from the pure iodide (CH3NH3PbI3) to the diiodomonobromide (CH3NH3PbI2Br). Hyperspectral maps of steady-state absolute intensity photoluminescence (AIPL) are used to determine the quasi-Fermi level splitting (QFLS) at each point after synthesis. The QFLS upon first illumination increases with bandgap and reaches a maximum of 1.27 eV undermore » 1 sun illumination intensity for a bandgap of 1.75 eV. However, the optoelectronic quality (χ), defined as the ratio of the QFLS to the maximum theoretical QFLS for bandgap, decreases with bandgap from around 88% for 1.60 eV bandgap down to 82% for 1.84 eV bandgap. Further, we show that a reversible light induced defect forms that reduces the optoelectronic quality, particularly for high-bandgap materials. Composition analysis shows that the halide to lead ratio, (I + Br)/Pb, decreases from 3 for the pure iodide to 2.5 for the diiodomonobromide, suggesting a role of halide vacancies or halide substitution defects in the light-induced instability for this synthesis route. Even with the light-induced defect, a stable QFLS of about 1.17 eV is possible. Comparing our QFLS to Voc values from HP devices reported in the literature indicates that higher open circuit voltages are possible but may require optimization of band alignment. Further, the spectral shape of the PL emission is found to be more commensurate with Franz–Keldysh broadening from local electric fields or from a screened Thomas–Fermi density of states (as opposed to a joint density of states due to Urbach disorder).« less

Highly Efficient Ternary-Blend Polymer Solar Cells Enabled by a Nonfullerene Acceptor and Two Polymer Donors with a Broad Composition Tolerance.

PubMed

Xu, Xiaopeng; Bi, Zhaozhao; Ma, Wei; Wang, Zishuai; Choy, Wallace C H; Wu, Wenlin; Zhang, Guangjun; Li, Ying; Peng, Qiang

2017-12-01

In this work, highly efficient ternary-blend organic solar cells (TB-OSCs) are reported based on a low-bandgap copolymer of PTB7-Th, a medium-bandgap copolymer of PBDB-T, and a wide-bandgap small molecule of SFBRCN. The ternary-blend layer exhibits a good complementary absorption in the range of 300-800 nm, in which PTB7-Th and PBDB-T have excellent miscibility with each other and a desirable phase separation with SFBRCN. In such devices, there exist multiple energy transfer pathways from PBDB-T to PTB7-Th, and from SFBRCN to the above two polymer donors. The hole-back transfer from PTB7-Th to PBDB-T and multiple electron transfers between the acceptor and the donor materials are also observed for elevating the whole device performance. After systematically optimizing the weight ratio of PBDB-T:PTB7-Th:SFBRCN, a champion power conversion efficiency (PCE) of 12.27% is finally achieved with an open-circuit voltage (V oc ) of 0.93 V, a short-circuit current density (J sc ) of 17.86 mA cm -2 , and a fill factor of 73.9%, which is the highest value for the ternary OSCs reported so far. Importantly, the TB-OSCs exhibit a broad composition tolerance with a high PCE over 10% throughout the whole blend ratios. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Protected, back-illuminated silicon photocathodes or photoanodes for water splitting tandem stacks (Conference Presentation)

NASA Astrophysics Data System (ADS)

Vesborg, Peter C.; Bae, Dowon; Seger, Brian J.; Chorkendorff, Ib; Hansen, Ole; Pedersen, Thomas; Mei, Bastian; Frydendal, Rasmus

2016-10-01

Silicon is a promising contender in the race for low-bandgap absorbers for use in a solar driven monolithic water splitting cell (PEC). However, given its role as the low-bandgap material the silicon must sit behind the corresponding high-bandgap material and as such, it will be exposed to (red) light from the dry back-side - not from the wet front side, where the electrochemistry takes place.[1,2] Depending on the configuration of the selective contacts (junctions) this may lead to compromises between high absorption and low recombination.[2,3] We discuss the tradeoffs and compare modeling results to measurements. Regardless of configuration, the wet surface of the silicon is prone to passivation or corrosion and must therefore be carefully protected in service in order to remain active. We demonstrate the use of TiO2 as an effective protection layer for both photoanodes and photocathodes in acid electrolyte [4] and NiCoOx for photoanodes in alkaline electrolyte. [3] References: [1]: B. Seger et alia, Energ. Environ. Sci., 7 (8), 2397-2413 (2014), DOI:10.1039/c4ee01335b [2]: D. Bae et alia, Energ. Environ. Sci., 8 (2), 650-660 (2015), DOI: 10.1039/c4ee03723e [3]: D. Bae et alia, submitted, (2016) [4]: B. Mei et alia, J. Phys. Chem. C., 119 (27), 15019-15027 (2015), DOI: 10.1021/acs.jpcc.5b04407

Measurements and Modeling of III-V Solar Cells at High Temperatures up to 400 $${}^{\\circ}$$ C

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perl, Emmett E.; Simon, John; Geisz, John F.

2016-09-01

In this paper, we study the performance of 2.0 eV Al0.12Ga0.39In0.49P and 1.4 eV GaAs solar cells over a temperature range of 25-400 degrees C. The temperature-dependent J01 and J02 dark currents are extracted by fitting current-voltage measurements to a two-diode model. We find that the intrinsic carrier concentration ni dominates the temperature dependence of the dark currents, open-circuit voltage, and cell efficiency. To study the impact of temperature on the photocurrent and bandgap of the solar cells, we measure the quantum efficiency and illuminated current-voltage characteristics of the devices up to 400 degrees C. As the temperature is increased,more » we observe no degradation to the internal quantum efficiency and a decrease in the bandgap. These two factors drive an increase in the short-circuit current density at high temperatures. Finally, we measure the devices at concentrations ranging from ~30 to 1500 suns and observe n = 1 recombination characteristics across the entire temperature range. These findings should be a valuable guide to the design of any system that requires high-temperature solar cell operation.« less

Quantum-engineered interband cascade photovoltaic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Razeghi, Manijeh; Tournié, Eric; Brown, Gail J.

2013-12-18

Quantum-engineered multiple stage photovoltaic (PV) devices are explored based on InAs/GaSb/AlSb interband cascade (IC) structures. These ICPV devices employ multiple discrete absorbers that are connected in series by widebandgap unipolar barriers using type-II heterostructure interfaces for facilitating carrier transport between cascade stages similar to IC lasers. The discrete architecture is beneficial for improving the collection efficiency and for spectral splitting by utilizing absorbers with different bandgaps. As such, the photo-voltages from each individual cascade stage in an ICPV device add together, creating a high overall open-circuit voltage, similar to conventional multi-junction tandem solar cells. Furthermore, photo-generated carriers can be collectedmore » with nearly 100% efficiency in each stage. This is because the carriers travel over only a single cascade stage, designed to be shorter than a typical diffusion length. The approach is of significant importance for operation at high temperatures where the diffusion length is reduced. Here, we will present our recent progress in the study of ICPV devices, which includes the demonstration of ICPV devices at room temperature and above with narrow bandgaps (e.g. 0.23 eV) and high open-circuit voltages. © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.« less

Theoretical investigation of performance of armchair graphene nanoribbon field effect transistors

NASA Astrophysics Data System (ADS)

Hur, Ji-Hyun; Kim, Deok-Kee

2018-05-01

In this paper, we theoretically investigate the highest possible expected performance for graphene nanoribbon field effect transistors (GNRFETs) for a wide range of operation voltages and device structure parameters, such as the width of the graphene nanoribbon and gate length. We formulated a self-consistent, non-equilibrium Green’s function method in conjunction with the Poisson equation and modeled the operation of nanometer sized GNRFETs, of which GNR channels have finite bandgaps so that the GNRFET can operate as a switch. We propose a metric for competing with the current silicon CMOS high performance or low power devices and explain that this can vary greatly depending on the GNRFET structure parameters.

Theoretical investigation of performance of armchair graphene nanoribbon field effect transistors.

PubMed

Hur, Ji-Hyun; Kim, Deok-Kee

2018-05-04

In this paper, we theoretically investigate the highest possible expected performance for graphene nanoribbon field effect transistors (GNRFETs) for a wide range of operation voltages and device structure parameters, such as the width of the graphene nanoribbon and gate length. We formulated a self-consistent, non-equilibrium Green's function method in conjunction with the Poisson equation and modeled the operation of nanometer sized GNRFETs, of which GNR channels have finite bandgaps so that the GNRFET can operate as a switch. We propose a metric for competing with the current silicon CMOS high performance or low power devices and explain that this can vary greatly depending on the GNRFET structure parameters.

Vertical III-nitride thin-film power diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wierer, Jr., Jonathan; Fischer, Arthur J.; Allerman, Andrew A.

2017-03-14

A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.

Reduced voltage losses yield 10% efficient fullerene free organic solar cells with >1 V open circuit voltages.

PubMed

Baran, D; Kirchartz, T; Wheeler, S; Dimitrov, S; Abdelsamie, M; Gorman, J; Ashraf, R S; Holliday, S; Wadsworth, A; Gasparini, N; Kaienburg, P; Yan, H; Amassian, A; Brabec, C J; Durrant, J R; McCulloch, I

2016-12-01

Optimization of the energy levels at the donor-acceptor interface of organic solar cells has driven their efficiencies to above 10%. However, further improvements towards efficiencies comparable with inorganic solar cells remain challenging because of high recombination losses, which empirically limit the open-circuit voltage ( V oc ) to typically less than 1 V. Here we show that this empirical limit can be overcome using non-fullerene acceptors blended with the low band gap polymer PffBT4T-2DT leading to efficiencies approaching 10% (9.95%). We achieve V oc up to 1.12 V, which corresponds to a loss of only E g / q - V oc = 0.5 ± 0.01 V between the optical bandgap E g of the polymer and V oc . This high V oc is shown to be associated with the achievement of remarkably low non-geminate and non-radiative recombination losses in these devices. Suppression of non-radiative recombination implies high external electroluminescence quantum efficiencies which are orders of magnitude higher than those of equivalent devices employing fullerene acceptors. Using the balance between reduced recombination losses and good photocurrent generation efficiencies achieved experimentally as a baseline for simulations of the efficiency potential of organic solar cells, we estimate that efficiencies of up to 20% are achievable if band gaps and fill factors are further optimized.

Design of an Auto-zeroed, Differential, Organic Thin-film Field-effect Transistor Amplifier for Sensor Applications

NASA Technical Reports Server (NTRS)

Binkley, David M.; Verma, Nikhil; Crawford, Robert L.; Brandon, Erik; Jackson, Thomas N.

2004-01-01

Organic strain gauge and other sensors require high-gain, precision dc amplification to process their low-level output signals. Ideally, amplifiers would be fabricated using organic thin-film field-effect transistors (OTFT's) adjacent to the sensors. However, OTFT amplifiers exhibit low gain and high input-referred dc offsets that must be effectively managed. This paper presents a four-stage, cascaded differential OTFT amplifier utilizing switched capacitor auto-zeroing. Each stage provides a nominal voltage gain of four through a differential pair driving low-impedance active loads, which provide common-mode output voltage control. p-type pentacence OTFT's are used for the amplifier devices and auto-zero switches. Simulations indicate the amplifier provides a nominal voltage gain of 280 V/V and effectively amplifies a 1-mV dc signal in the presence of 500-mV amplifier input-referred dc offset voltages. Future work could include the addition of digital gain calibration and offset correction of residual offsets associated with charge injection imbalance in the differential circuits.

Achieving 12.8% Efficiency by Simultaneously Improving Open-Circuit Voltage and Short-Circuit Current Density in Tandem Organic Solar Cells.

PubMed

Qin, Yunpeng; Chen, Yu; Cui, Yong; Zhang, Shaoqing; Yao, Huifeng; Huang, Jiang; Li, Wanning; Zheng, Zhong; Hou, Jianhui

2017-06-01

Tandem organic solar cells (TOSCs), which integrate multiple organic photovoltaic layers with complementary absorption in series, have been proved to be a strong contender in organic photovoltaic depending on their advantages in harvesting a greater part of the solar spectrum and more efficient photon utilization than traditional single-junction organic solar cells. However, simultaneously improving open circuit voltage (V oc ) and short current density (J sc ) is a still particularly tricky issue for highly efficient TOSCs. In this work, by employing the low-bandgap nonfullerene acceptor, IEICO, into the rear cell to extend absorption, and meanwhile introducing PBDD4T-2F into the front cell for improving V oc , an impressive efficiency of 12.8% has been achieved in well-designed TOSC. This result is also one of the highest efficiencies reported in state-of-the-art organic solar cells. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Characterization of Low Noise, Precision Voltage Reference REF5025-HT Under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad

2010-01-01

The performance of Texas Instruments precision voltage reference REF5025-HT was assessed under extreme temperatures. This low noise, 2.5 V output chip is suitable for use in high temperature down-hole drilling applications, but no data existed on its performance at cryogenic temperatures. The device was characterized in terms of output voltage and supply current at different input voltage levels as a function of temperature between +210 C and -190 C. Line and load regulation characteristics were also established at six load levels and at different temperatures. Restart capability at extreme temperatures and the effects of thermal cycling, covering the test temperature range, on its operation and stability were also investigated. Under no load condition, the voltage reference chip exhibited good stability in its output over the temperature range of -50 C to +200 C. Outside that temperature range, output voltage did change as temperature was changed. For example, at the extreme temperatures of +210 C and - 190 C, the output level dropped to 2.43 V and 2.32 V, respectively as compared to the nominal value of 2.5 V. At cryogenic test temperatures of -100 C and -150 C the output voltage dropped by about 20%. The quiescent supply current of the voltage reference varied slightly with temperature but remained close to its specified value. In terms of line regulation, the device exhibited excellent stability between -50 C and +150 C over the entire input voltage range and load levels. At the other test temperatures, however, while line regulation became poor at cryogenic temperatures of -100 C and below, it suffered slight degradation at the extreme high temperature but only at the high load level of 10 mA. The voltage reference also exhibited very good load regulation with temperature down to -100 C, but its output dropped sharply at +210 C only at the heavy load of 10 mA. The semiconductor chip was able restart at the extreme temperatures of -190 C and +210 C, and the limited thermal cycling did not influence its characteristics and had no impact on its packaging as no structural or physical damage was observed.

Stable low-bandgap Pb-Sn binary perovskites for tandem solar cells

DOE PAGES

Yang, Zhibin; Rajagopal, Adharsh; Chueh, Chu -Chen; ...

2016-08-22

A low-bandgap (1.33 eV) Sn-based MA 0.5FA 0.5Pb 0.75Sn 0.25I 3 perovskite is developed via combined compositional, process, and interfacial engineering. It can deliver a high power conversion efficiency (PCE) of 14.19%. Lastly, a four-terminal all-perovskite tandem solar cell is demonstrated by combining this low-bandgap cell with a semitransparent MAPbI 3 cell to achieve a high efficiency of 19.08%.

Method and Apparatus for In-Situ Health Monitoring of Solar Cells in Space

NASA Technical Reports Server (NTRS)

Krasowski, Michael J. (Inventor); Prokop, Norman F. (Inventor)

2012-01-01

Some embodiments of the present invention describe an apparatus that includes an oscillator, a ramp generator, and an inverter. The apparatus includes an oscillator, an inverter, and a ramp generator. The oscillator is configured to generate a waveform comprising a low time and a high time. The inverter is configured to receive the waveform generated by the oscillator, and invert the waveform. The ramp generator configured to increase a gate control voltage of a transistor connected to a solar cell, and rapidly decrease the gate control voltage of the transistor. During the low time of the waveform, a measurement of a current and a voltage of the solar cell is performed as the current and voltage of the solar cell are transmitted through a first channel and to a second channel. During the high time of the waveform, a measurement of a current of a shorted cell and a voltage reference is performed as the current of the shorted cell and the voltage reference are transmitted through the first channel and the second channel.

Effect of annealing on the sub-bandgap, defects and trapping states of ZnO nanostructures

NASA Astrophysics Data System (ADS)

Wahyuono, Ruri Agung; Hermann-Westendorf, Felix; Dellith, Andrea; Schmidt, Christa; Dellith, Jan; Plentz, Jonathan; Schulz, Martin; Presselt, Martin; Seyring, Martin; Rettenmeyer, Markus; Dietzek, Benjamin

2017-02-01

Annealing treatment was applied to different mesoporous ZnO nanostructures prepared by wet chemical synthesis, i.e. nanoflowers (NFs), spherical aggregates (SPs), and nanorods (NRs). The sub-bandgap, defect properties as well as the trapping state characteristics after annealing were characterized spectroscopically, including ultrasensitive photothermal deflection spectroscopy (PDS), photoluminescence and photo-electrochemical methods. The comprehensive experimental analysis reveals that annealing alters both the bandgap and the sub-bandgap. The defect concentration and the density of surface traps in the ZnO nanostructures are suppressed upon annealing as deduced from photoluminescence and open-circuit voltage decay analysis. The photo-electrochemical investigations reveal that the surface traps dominate the near conduction band edge of ZnO and, hence, lead to high recombination rates when used in DSSCs. The density of bulk traps in ZnO SPs is higher than that in ZnO NFs and ZnO NRs and promote lower recombination loss between photoinjected electrons with the electrolyte-oxidized species on the surface. The highest power conversion efficiency of ZnO NFs-, ZnO SPs-, and ZnO NRs-based DSSC obtained in our system is 2.0, 4.5, and 1.8%, respectively.

Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping

NASA Astrophysics Data System (ADS)

Sedghi, N.; Li, H.; Brunell, I. F.; Dawson, K.; Guo, Y.; Potter, R. J.; Gibbon, J. T.; Dhanak, V. R.; Zhang, W. D.; Zhang, J. F.; Hall, S.; Robertson, J.; Chalker, P. R.

2017-08-01

The effect of fluorine doping on the switching stability of Ta2O5 resistive random access memory devices is investigated. It shows that the dopant serves to increase the memory window and improve the stability of the resistive states due to the neutralization of oxygen vacancies. The ability to alter the current in the low resistance state with set current compliance coupled with large memory window makes multilevel cell switching more favorable. The devices have set and reset voltages of <1 V with improved stability due to the fluorine doping. Density functional modeling shows that the incorporation of fluorine dopant atoms at the two-fold O vacancy site in the oxide network removes the defect state in the mid bandgap, lowering the overall density of defects capable of forming conductive filaments. This reduces the probability of forming alternative conducting paths and hence improves the current stability in the low resistance states. The doped devices exhibit more stable resistive states in both dc and pulsed set and reset cycles. The retention failure time is estimated to be a minimum of 2 years for F-doped devices measured by temperature accelerated and stress voltage accelerated retention failure methods.

On electrode pinning and charge blocking layers in organic solar cells

NASA Astrophysics Data System (ADS)

Magen, Osnat; Tessler, Nir

2017-05-01

We use device modelling for studying the losses introduced by metallic electrodes in organic solar cells' device structure. We first discuss the inclusion of pinning at the integer charge transfer state in device models, with and without using the image charge potential. In the presence of disorder, the space charge introduced due to the image potential enhances the pinning by more than 0.2 eV. The explicit introduction of the image potential creates band-gap narrowing at the contact, thus affecting both dark leakage current and photo conversion efficiency. We find that there are two regimes in which the contacts may limit the performance. For low (moderate) barriers, the contacts introduce minority carrier recombination at the contacts that adds to the bulk recombination channels. Only for high barriers, the contacts directly limit the open circuit voltage and impose a value that is equal to the contact's energy difference. Examining the device structures with blocking layers, we find that these are mainly useful for the low to moderate contacts' barriers and that for the high barrier case, the enhancement of open circuit voltage may be accompanied by the introduction of serial resistance or S shape.

Analysis of High Switching Frequency Quasi-Z-Source Photovoltaic Inverter Using Wide Bandgap Devices

NASA Astrophysics Data System (ADS)

Kayiranga, Thierry

Power inverters continue to play a key role in todays electrical system more than ever. Power inverters employ power semiconductors to converter direct current (DC) into alternating current (AC). The performance of the semiconductors is based on speed and efficiency. Until recently, Silicon (Si) semiconductors had been established as mature. However, the continuous optimization and improvements in the production process of Si to meet today technology requirements have pushed Si materials to their theoretical limits. In an effort to find a suitable replacement, wide bandgap devices mainly Gallium Nitride (GaN) and Silicon Carbide (SiC), have proved to be excellent candidates offering high operation temperature, high blocking voltage and high switching frequency; of which the latter makes GaN a better candidate in high switching low voltage in Distributed Generations (DG). The single stage Quasi-Z-Source Inverter (qZSI) is also able to draw continuous and constant current from the source making ideal for PV applications in addition to allowing shoot-through states. The qZSI find best applications in medium level ranges where multiples qZS inverters can be cascaded (qZS-CMI) by combining the benefit of the qZSI, boost capabilities and continuous and constant input current, and those of the CMI, low output harmonic content and independent MPPT. When used with GaN devices operating at very high frequency, the qZS network impedance can be significantly reduced. However, the impedance network becomes asymmetric. The asymmetric impedance network (AIN-qZSI) has several advantages such as increased power density, increases system lifetime, small size volume and size making it more attractive for module integrated converter (MIC) concepts. However, there are technical challenges. With asymmetric component, resonance is introduced in the system leading to more losses and audible noise. With small inductances, new operation states become available further increasing the system complexity. This report investigates the AIN-qZSI and present solutions to aforementioned issues.

High voltage photovoltaic power converter

DOEpatents

Haigh, Ronald E.; Wojtczuk, Steve; Jacobson, Gerard F.; Hagans, Karla G.

2001-01-01

An array of independently connected photovoltaic cells on a semi-insulating substrate contains reflective coatings between the cells to enhance efficiency. A uniform, flat top laser beam profile is illuminated upon the array to produce electrical current having high voltage. An essentially wireless system includes a laser energy source being fed through optic fiber and cast upon the photovoltaic cell array to prevent stray electrical signals prior to use of the current from the array. Direct bandgap, single crystal semiconductor materials, such as GaAs, are commonly used in the array. Useful applications of the system include locations where high voltages are provided to confined spaces such as in explosive detonation, accelerators, photo cathodes and medical appliances.

Low Voltage Alarm Apprenticeship. Related Training Modules. 29.1-29.5 Drawing.

ERIC Educational Resources Information Center

Lane Community Coll., Eugene, OR.

This packet of five learning modules on drawing is one of eight such packets developed for apprenticeship training for low voltage alarm. Introductory materials are a complete listing of all available modules and a supplementary reference list. Each module contains some or all of these components: goal, performance indicators, study guide (a check…

Low Voltage Alarm Apprenticeship. Related Training Modules. 28.1-28.12 Human Relations.

ERIC Educational Resources Information Center

Lane Community Coll., Eugene, OR.

This packet of 12 learning modules on human relations is 1 of 8 such packets developed for apprenticeship training for low voltage alarm. Introductory materials are a complete listing of all available modules and a supplementary reference list. Each module contains some or all of these components: goal, performance indicators, study guide (a check…

Low Voltage Alarm Apprenticeship. Related Training Modules. 6.1-6.6 Safety.

ERIC Educational Resources Information Center

Lane Community Coll., Eugene, OR.

This packet of six learning modules on safety is one of eight such packets developed for apprenticeship training for low voltage alarm. Introductory materials are a complete listing of all available modules and a supplementary reference list. Each module contains some or all of these components: goal, performance indicators, study guide (a check…

Low Voltage Alarm Apprenticeship. Related Training Modules. 27.1-27.4 Computer Usage.

ERIC Educational Resources Information Center

Lane Community Coll., Eugene, OR.

This packet of four learning modules on computer usage is one of eight such packets developed for apprenticeship training for low voltage alarm. Introductory materials are a complete listing of all available modules and a supplementary reference list. Each module contains some or all of these components: goal, performance indicators, study guide…

Low Voltage Alarm Apprenticeship. Related Training Modules. 0.1 History of Alarms.

ERIC Educational Resources Information Center

Lane Community Coll., Eugene, OR.

This packet of one learning module on the history of alarms is one of eight such packets developed for apprenticeship training for low voltage alarm. Introductory materials are a complete listing of all available modules and a supplementary reference list. Each module contains some or all of these components: goal, performance indicators, study…

Low Voltage Alarm Apprenticeship. Related Training Modules. 7.1-26.10 Alarm Basics.

ERIC Educational Resources Information Center

Lane Community Coll., Eugene, OR.

This packet of 70 learning modules on alarm basics is 1 of 8 such packets developed for apprenticeship training for low voltage alarm. Introductory materials are a complete listing of all available modules and a supplementary reference list. Each module contains some or all of these components: goal, performance indicators, study guide (a check…

Low Voltage Alarm Apprenticeship. Related Training Modules. 2.1-5.3 Electricity/Electronics.

ERIC Educational Resources Information Center

Lane Community Coll., Eugene, OR.

This packet of 29 learning modules on electricity/electronics is 1 of 8 such packets developed for apprenticeship training for low voltage alarm. Introductory materials are a complete listing of all available modules and a supplementary reference list. Each module contains some or all of these components: goal, performance indicators, study guide…

Experimental investigation of the excess charge and time constant of minority carriers in the thin diffused layer of 0.1 ohm-cm silicon solar cells

NASA Technical Reports Server (NTRS)

Godlewski, M. P.; Brandhorst, H. W., Jr.; Lindholm, F. A.; Sah, C. T.

1976-01-01

An experimental method is presented that can be used to interpret the relative roles of bandgap narrowing and recombination processes in the diffused layer. This method involves measuring the device time constant by open-circuit voltage decay and the base region diffusion length by X-ray excitation. A unique illuminated diode method is used to obtain the diode saturation current. These data are interpreted using a simple model to determine individually the minority carrier lifetime and the excess charge. These parameters are then used to infer the relative importance of bandgap narrowing and recombination processes in the diffused layer.

Impact of Plasma Electron Flux on Plasma Damage‐Free Sputtering of Ultrathin Tin‐Doped Indium Oxide Contact Layer on p‐GaN for InGaN/GaN Light‐Emitting Diodes

PubMed Central

Son, Kwang Jeong; Kim, Tae Kyoung; Cha, Yu‐Jung; Oh, Seung Kyu; You, Shin‐Jae; Ryou, Jae‐Hyun

2017-01-01

Abstract The origin of plasma‐induced damage on a p‐type wide‐bandgap layer during the sputtering of tin‐doped indium oxide (ITO) contact layers by using radiofrequency‐superimposed direct current (DC) sputtering and its effects on the forward voltage and light output power (LOP) of light‐emitting diodes (LEDs) with sputtered ITO transparent conductive electrodes (TCE) is systematically studied. Changing the DC power voltage from negative to positive bias reduces the forward voltages and enhances the LOP of the LEDs. The positive DC power drastically decreases the electron flux in the plasma obtained by plasma diagnostics using a cutoff probe and a Langmuir probe, suggesting that the repulsion of plasma electrons from the p‐GaN surface can reduce plasma‐induced damage to the p‐GaN. Furthermore, electron‐beam irradiation on p‐GaN prior to ITO deposition significantly increases the forward voltages, showing that the plasma electrons play an important role in plasma‐induced damage to the p‐GaN. The plasma electrons can increase the effective barrier height at the ITO/deep‐level defect (DLD) band of p‐GaN by compensating DLDs, resulting in the deterioration of the forward voltage and LOP. Finally, the plasma damage‐free sputtered‐ITO TCE enhances the LOP of the LEDs by 20% with a low forward voltage of 2.9 V at 20 mA compared to LEDs with conventional e‐beam‐evaporated ITO TCE. PMID:29619312

Impact of Plasma Electron Flux on Plasma Damage-Free Sputtering of Ultrathin Tin-Doped Indium Oxide Contact Layer on p-GaN for InGaN/GaN Light-Emitting Diodes.

PubMed

Son, Kwang Jeong; Kim, Tae Kyoung; Cha, Yu-Jung; Oh, Seung Kyu; You, Shin-Jae; Ryou, Jae-Hyun; Kwak, Joon Seop

2018-02-01

The origin of plasma-induced damage on a p -type wide-bandgap layer during the sputtering of tin-doped indium oxide (ITO) contact layers by using radiofrequency-superimposed direct current (DC) sputtering and its effects on the forward voltage and light output power (LOP) of light-emitting diodes (LEDs) with sputtered ITO transparent conductive electrodes (TCE) is systematically studied. Changing the DC power voltage from negative to positive bias reduces the forward voltages and enhances the LOP of the LEDs. The positive DC power drastically decreases the electron flux in the plasma obtained by plasma diagnostics using a cutoff probe and a Langmuir probe, suggesting that the repulsion of plasma electrons from the p -GaN surface can reduce plasma-induced damage to the p -GaN. Furthermore, electron-beam irradiation on p -GaN prior to ITO deposition significantly increases the forward voltages, showing that the plasma electrons play an important role in plasma-induced damage to the p -GaN. The plasma electrons can increase the effective barrier height at the ITO/deep-level defect (DLD) band of p -GaN by compensating DLDs, resulting in the deterioration of the forward voltage and LOP. Finally, the plasma damage-free sputtered-ITO TCE enhances the LOP of the LEDs by 20% with a low forward voltage of 2.9 V at 20 mA compared to LEDs with conventional e-beam-evaporated ITO TCE.

High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters

DOEpatents

Wanlass, Mark W [Golden, CO

2011-11-29

A monolithic, multi-bandgap, tandem solar photovoltaic converter has at least one, and preferably at least two, subcells grown lattice-matched on a substrate with a bandgap in medium to high energy portions of the solar spectrum and at least one subcell grown lattice-mismatched to the substrate with a bandgap in the low energy portion of the solar spectrum, for example, about 1 eV.

High-efficiency, monolithic, multi-bandgap, tandem, photovoltaic energy converters

DOEpatents

Wanlass, Mark W

2014-05-27

A monolithic, multi-bandgap, tandem solar photovoltaic converter has at least one, and preferably at least two, subcells grown lattice-matched on a substrate with a bandgap in medium to high energy portions of the solar spectrum and at least one subcell grown lattice-mismatched to the substrate with a bandgap in the low energy portion of the solar spectrum, for example, about 1 eV.

Low-power logic computing realized in a single electric-double-layer MoS2 transistor gated with polymer electrolyte

NASA Astrophysics Data System (ADS)

Guo, Junjie; Xie, Dingdong; Yang, Bingchu; Jiang, Jie

2018-06-01

Due to its mechanical flexibility, large bandgap and carrier mobility, atomically thin molybdenum disulphide (MoS2) has attracted widespread attention. However, it still lacks a facile route to fabricate a low-power high-performance logic gates/circuits before it gets the real application. Herein, we reported a facile and environment-friendly method to establish the low-power logic function in a single MoS2 field-effect transistor (FET) configuration gated with a polymer electrolyte. Such low-power and high-performance MoS2 FET can be implemented by using water-soluble polyvinyl alcohol (PVA) polymer as proton-conducting electric-double-layer (EDL) dielectric layer. It exhibited an ultra-low voltage (1.5 V) and a good performance with a high current on/off ratio (Ion/off) of 1 × 105, a large electron mobility (μ) of 47.5 cm2/V s, and a small subthreshold swing (S) of 0.26 V/dec, respectively. The inverter can be realized by using such a single MoS2 EDL FET with a gain of ∼4 at the operation voltage of only ∼1 V. Most importantly, the neuronal AND logic computing can be also demonstrated by using such a double-lateral-gate single MoS2 EDL transistor. These results show an effective step for future applications of 2D MoS2 FETs for integrated electronic engineering and low-energy environment-friendly green electronics.

Wide and ultra-wide bandgap oxides: where paradigm-shift photovoltaics meets transparent power electronics

NASA Astrophysics Data System (ADS)

Pérez-Tomás, Amador; Chikoidze, Ekaterine; Jennings, Michael R.; Russell, Stephen A. O.; Teherani, Ferechteh H.; Bove, Philippe; Sandana, Eric V.; Rogers, David J.

2018-03-01

Oxides represent the largest family of wide bandgap (WBG) semiconductors and also offer a huge potential range of complementary magnetic and electronic properties, such as ferromagnetism, ferroelectricity, antiferroelectricity and high-temperature superconductivity. Here, we review our integration of WBG and ultra WBG semiconductor oxides into different solar cells architectures where they have the role of transparent conductive electrodes and/or barriers bringing unique functionalities into the structure such above bandgap voltages or switchable interfaces. We also give an overview of the state-of-the-art and perspectives for the emerging semiconductor β- Ga2O3, which is widely forecast to herald the next generation of power electronic converters because of the combination of an UWBG with the capacity to conduct electricity. This opens unprecedented possibilities for the monolithic integration in solar cells of both self-powered logic and power electronics functionalities. Therefore, WBG and UWBG oxides have enormous promise to become key enabling technologies for the zero emissions smart integration of the internet of things.

Fullerene-based low-density superhard materials with tunable bandgaps

NASA Astrophysics Data System (ADS)

Cao, Ai-Hua; Zhao, Wen-Juan; Gan, Li-Hua

2018-06-01

Four carbon allotropes built from tetrahedral symmetrical fullerenes C28 and C40 are predicted to be superhard materials with mass density around that of water, and all of them are porous semiconductors. Both the bandgaps and hardness decrease with increasing ratio of sp2 hybridized carbon atoms. The mechanical and thermodynamic stabilities of C28- and C40-based allotropes at zero pressure are confirmed by a variety of state-of-the-art theoretical calculations. The evolution trend of bandgap found here suggests that one can obtain low-density hard materials with tunable bandgaps by substituting the carbon atom in diamond with different Td-symmetrical non-IPR fullerene Cn.

New way of polymer design for organic solar cells using the quinoid structure

NASA Astrophysics Data System (ADS)

Berube, Nicolas; Gaudreau, Josiane; Cote, Michel

2013-03-01

Research in organic photovoltaic applications are receiving a great interest as they offer an environmentally clean and low-cost solution to the world's rising energy needs. Controlling the device's active polymer optical bandgap is an important step that affects its absorption of the solar spectrum, and ultimately, its power conversion efficiency. The use of fused heterocycles that favors the polymer's quinoid structure has been a known method to lower the bandgap, for example, with isothianapthene, but there is a lack of quantifiable data on this effect. Density functional theory (DFT) calculations were done on over 60 polymers with bandgaps between 0.5 eV and 4 eV. They clearly show that low bandgaps are observed in copolymers that carefully stands between their quinoid and aromatic structures. Such balance can be obtained by mixing monomer units with quinoid characteristics with aromatic ones. Time-dependant DFT results also links low bandgaps with lower reorganization energy, which means that polymers with this structural form could possess higher charge mobilities. This link between the geometrical structure and the bandgap is compatible with a vast variety of polymers and is more convincing than the commonly used donor-acceptor method of polymer design.

Optoelectronic Quality and Stability of Hybrid Perovskites from MAPbI 3 to MAPbI 2 Br Using Composition Spread Libraries

DOE PAGES

Braly, Ian L.; Hillhouse, Hugh W.

2015-12-22

The development of stable high-bandgap hybrid perovskites (HPs) with high optoelectronic quality may enable tandem solar cells with power conversion efficiencies approaching 30%. The halide composition of HPs has been observed to effect bandgap, carrier lifetime, and material stability. Here we report optoelectronic quality and stability under illumination of thousands of compositions ranging from the pure iodide (CH3NH3PbI3) to the diiodomonobromide (CH3NH3PbI2Br). Hyperspectral maps of steady-state absolute intensity photoluminescence (AIPL) are used to determine the quasi-Fermi level splitting (QFLS) at each point after synthesis. The QFLS upon first illumination increases with bandgap and reaches a maximum of 1.27 eV undermore » 1 sun illumination intensity for a bandgap of 1.75 eV. However, the optoelectronic quality (χ), defined as the ratio of the QFLS to the maximum theoretical QFLS for bandgap, decreases with bandgap from around 88% for 1.60 eV bandgap down to 82% for 1.84 eV bandgap. Further, we show that a reversible light induced defect forms that reduces the optoelectronic quality, particularly for high-bandgap materials. Composition analysis shows that the halide to lead ratio, (I + Br)/Pb, decreases from 3 for the pure iodide to 2.5 for the diiodomonobromide, suggesting a role of halide vacancies or halide substitution defects in the light-induced instability for this synthesis route. Even with the light-induced defect, a stable QFLS of about 1.17 eV is possible. Comparing our QFLS to Voc values from HP devices reported in the literature indicates that higher open circuit voltages are possible but may require optimization of band alignment. Further, the spectral shape of the PL emission is found to be more commensurate with Franz–Keldysh broadening from local electric fields or from a screened Thomas–Fermi density of states (as opposed to a joint density of states due to Urbach disorder).« less

Performance of the Micropower Voltage Reference ADR3430 Under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad

2011-01-01

Electronic systems designed for use in space exploration systems are expected to be exposed to harsh temperatures. For example, operation at cryogenic temperatures is anticipated in space missions such as polar craters of the moon (-223 C), James Webb Space Telescope (-236 C), Mars (-140 C), Europa (-223 C), Titan (-178 C), and other deep space probes away from the sun. Similarly, rovers and landers on the lunar surface, and deep space probes intended for the exploration of Venus are expected to encounter high temperature extremes. Electronics capable of operation under extreme temperatures would not only meet the requirements of future spacebased systems, but would also contribute to enhancing efficiency and improving reliability of these systems through the elimination of the thermal control elements that present electronics need for proper operation under the harsh environment of space. In this work, the performance of a micropower, high accuracy voltage reference was evaluated over a wide temperature range. The Analog Devices ADR3430 chip uses a patented voltage reference architecture to achieve high accuracy, low temperature coefficient, and low noise in a CMOS process [1]. The device combines two voltages of opposite temperature coefficients to create an output voltage that is almost independent of ambient temperature. It is rated for the industrial temperature range of -40 C to +125 C, and is ideal for use in low power precision data acquisition systems and in battery-powered devices. Table 1 shows some of the manufacturer s device specifications.

New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube™ integration

NASA Astrophysics Data System (ADS)

Diaz Llorente, C.; Le Royer, C.; Batude, P.; Fenouillet-Beranger, C.; Martinie, S.; Lu, C.-M. V.; Allain, F.; Colinge, J.-P.; Cristoloveanu, S.; Ghibaudo, G.; Vinet, M.

2018-06-01

This paper reports the fabrication and electrical characterization of planar SOI Tunnel FETs (TFETs) made using a Low-Temperature (LT) process designed for 3D sequential integration. These proof-of-concept TFETs feature junctions obtained by Solid Phase Epitaxy Regrowth (SPER). Their electrical behavior is analyzed and compared to reference samples (regular process using High-Temperature junction formation, HT). Dual ID-VDS measurements verify that the TFET structures present Band-to-Band tunnelling (BTBT) carrier injection and not Schottky Barrier tunnelling. P-mode operating LT TFETs deliver an ON state current similar to that of the HT reference, opening the door towards optimized devices operating with very low threshold voltage VTH and low supply voltage VDD.

Low Voltage Alarm Apprenticeship. Related Training Modules. 1.1-1.14 Trade Math.

ERIC Educational Resources Information Center

Lane Community Coll., Eugene, OR.

This packet of 14 learning modules on trade math is 1 of 8 such packets developed for apprenticeship training for low voltage alarm. Introductory materials are a complete listing of all available modules and a supplementary reference list. Each module contains some or all of these components: goal, performance indicators, study guide (a check list…

Enhancement in fluorescence quantum yield of MEH-PPV:BT blends for polymer light emitting diode applications

NASA Astrophysics Data System (ADS)

Nimith, K. M.; Satyanarayan, M. N.; Umesh, G.

2018-06-01

We have investigated the effect of blending electron deficient heterocycle Benzothiadiazole (BT) on the photo-physical properties of conjugated polymer Poly [2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV). Quantum yield (QY) value has been found to increase from 37% for pure MEH-PPV to 45% for an optimum MEH-PPV:BT blend ratio of 1:3. This can be attributed to the efficient energy transfer from the wide bandgap BT (host) to the small bandgap MEH-PPV (guest). The FTIR spectrum of MEH-PPV:BT blended thin film indicates suppression of aromatic C-H out-of-plane and in-plane bending, suggesting planarization of the conjugated polymer chains and, hence, leading to increase in the conjugation length. The increase in conjugation length is also evident from the red-shifted PL spectra of MEH-PPV:BT blended films. Single layer MEH-PPV:BT device shows lower turn-on voltage than single layer MEH-PPV alone device. Further, the effect of electrical conductivity of PEDOT:PSS on the current-voltage characteristics is investigated in the PLED devices with MEH-PPV:BT blend as the active layer. PEDOT:PSS with higher conductivity as HIL reduces the turn on voltage from 4.5 V to 3.9 V and enhances the current density and optical output in the device.

Wide-temperature integrated operational amplifier

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad (Inventor); Levanas, Greg (Inventor); Chen, Yuan (Inventor); Cozy, Raymond S. (Inventor); Greenwell, Robert (Inventor); Terry, Stephen (Inventor); Blalock, Benjamin J. (Inventor)

2009-01-01

The present invention relates to a reference current circuit. The reference circuit comprises a low-level current bias circuit, a voltage proportional-to-absolute temperature generator for creating a proportional-to-absolute temperature voltage (VPTAT), and a MOSFET-based constant-IC regulator circuit. The MOSFET-based constant-IC regulator circuit includes a constant-IC input and constant-IC output. The constant-IC input is electrically connected with the VPTAT generator such that the voltage proportional-to-absolute temperature is the input into the constant-IC regulator circuit. Thus the constant-IC output maintains the constant-IC ratio across any temperature range.

Photoinduced Bandgap Renormalization and Exciton Binding Energy Reduction in WS2.

PubMed

Cunningham, Paul D; Hanbicki, Aubrey T; McCreary, Kathleen M; Jonker, Berend T

2017-12-26

Strong Coulomb attraction in monolayer transition metal dichalcogenides gives rise to tightly bound excitons and many-body interactions that dominate their optoelectronic properties. However, this Coulomb interaction can be screened through control of the surrounding dielectric environment as well as through applied voltage, which provides a potential means of tuning the bandgap, exciton binding energy, and emission wavelength. Here, we directly show that the bandgap and exciton binding energy can be optically tuned by means of the intensity of the incident light. Using transient absorption spectroscopy, we identify a sub-picosecond decay component in the excited-state dynamics of WS 2 that emerges for incident photon energies above the A-exciton resonance, which originates from a nonequilibrium population of charge carriers that form excitons as they cool. The generation of this charge-carrier population exhibits two distinct energy thresholds. The higher threshold is coincident with the onset of continuum states and therefore provides a direct optical means of determining both the bandgap and exciton binding energy. Using this technique, we observe a reduction in the exciton binding energy from 310 ± 30 to 220 ± 20 meV as the excitation density is increased from 3 × 10 11 to 1.2 × 10 12 photons/cm 2 . This reduction is due to dynamic dipolar screening of Coulomb interactions by excitons, which is the underlying physical process that initiates bandgap renormalization and leads to the insulator-metal transition in monolayer transition metal dichalcogenides.

Minimized open-circuit voltage reduction in GaAs/InGaAs quantum well solar cells with bandgap-engineered graded quantum well depths

NASA Astrophysics Data System (ADS)

Li, Xiaohan; Dasika, Vaishno D.; Li, Ping-Chun; Ji, Li; Bank, Seth R.; Yu, Edward T.

2014-09-01

The use of InGaAs quantum wells with composition graded across the intrinsic region to increase open-circuit voltage in p-i-n GaAs/InGaAs quantum well solar cells is demonstrated and analyzed. By engineering the band-edge energy profile to reduce photo-generated carrier concentration in the quantum wells at high forward bias, simultaneous increases in both open-circuit voltage and short-circuit current density are achieved, compared to those for a structure with the same average In concentration, but constant rather than graded quantum well composition across the intrinsic region. This approach is combined with light trapping to further increase short-circuit current density.

Valley Phase and Voltage Control of Coherent Manipulation in Si Quantum Dots.

PubMed

Zimmerman, Neil M; Huang, Peihao; Culcer, Dimitrie

2017-07-12

With any roughness at the interface of an indirect-bandgap semiconducting dot, the phase of the valley-orbit coupling can take on a random value. This random value, in double quantum dots, causes a large change in the exchange splitting. We demonstrate a simple analytical method to calculate the phase, and thus the exchange splitting and singlet-triplet qubit frequency, for an arbitrary interface. We then show that, with lateral control of the position of a quantum dot using a gate voltage, the valley-orbit phase can be controlled over a wide range, so that variations in the exchange splitting can be controlled for individual devices. Finally, we suggest experiments to measure the valley phase and the concomitant gate voltage control.

Design and performance study of a DC-DC flyback converter based on wide bandgap power devices for photovoltaic applications

NASA Astrophysics Data System (ADS)

Alharbi, Salah S.; Alharbi, Saleh S.; Al-bayati, Ali M. S.; Matin, Mohammad

2017-08-01

This paper presents a high-performance dc-dc flyback converter design based on wide bandgap (WBG) semiconductor devices for photovoltaic (PV) applications. Two different power devices, a gallium nitride (GaN)-transistor and a silicon (Si)-MOSFET, are implemented individually in the flyback converter to examine their impact on converter performance. The total power loss of the converter with different power devices is analyzed for various switching frequencies. Converter efficiency is evaluated at different switching frequencies, input voltages, and output power levels. The results reveal that the converter with the GaN-transistor has lower total power loss and better efficiency compared to the converter with the conventional Si-MOSFET.

Characterization of the GaN-MgO Transistor Interface: More Power and Efficiency

NASA Astrophysics Data System (ADS)

Sanchez, Jose; Kumah, Divine; Walker, Fred

2012-02-01

In this age of high-energy consumption, the development of more efficient and more reliable devices is indispensable. Gallium nitride (GaN)-based devices are an option in achieving this goal. GaN's wide bandgap of 3.4 eV allows the device to handle large amount of current before leakage makes its energy consumption inefficient. The characteristics of GaN, in conjunction with those of Magnesium oxide (MgO), would allow for improvement of different electronic applications such as mobile phone communication technology. In this work, the fabrication of the GaN/MgO device was done by Molecular Beam Epitaxy. This device was grown under a variety of parameters where the growth temperature, growth chamber pressure, and the rate of material deposition were changed. To determine the optimal growth parameters, current-voltage and capacitance-voltage measurements were conducted on to evaluate the effects of these growth conditions. Atomic Force Microscopy was also used in characterizing the crystallinity and morphology of the samples. A conclusion of the research is that by improving the roughness of the substrate, the breakdown voltage of the MgO layer and the overall performance of the device can be improve, yielding a device with very low energy loss in the current transmission process.

Modeling and Simulation of - and Silicon Germanium-Base Bipolar Transistors Operating at a Wide Range of Temperatures.

NASA Astrophysics Data System (ADS)

Shaheed, M. Reaz

1995-01-01

Higher speed at lower cost and at low power consumption is a driving force for today's semiconductor technology. Despite a substantial effort toward achieving this goal via alternative technologies such as III-V compounds, silicon technology still dominates mainstream electronics. Progress in silicon technology will continue for some time with continual scaling of device geometry. However, there are foreseeable limits on achievable device performance, reliability and scaling for room temperature technologies. Thus, reduced temperature operation is commonly viewed as a means for continuing the progress towards higher performance. Although silicon CMOS will be the first candidate for low temperature applications, bipolar devices will be used in a hybrid fashion, as line drivers or in limited critical path elements. Silicon -germanium-base bipolar transistors look especially attractive for low-temperature bipolar applications. At low temperatures, various new physical phenomena become important in determining device behavior. Carrier freeze-out effects which are negligible at room temperature, become of crucial importance for analyzing the low temperature device characteristics. The conventional Pearson-Bardeen model of activation energy, used for calculation of carrier freeze-out, is based on an incomplete picture of the physics that takes place and hence, leads to inaccurate results at low temperatures. Plasma -induced bandgap narrowing becomes more pronounced in device characteristics at low temperatures. Even with modern numerical simulators, this effect is not well modeled or simulated. In this dissertation, improved models for such physical phenomena are presented. For accurate simulation of carrier freeze-out, the Pearson-Bardeen model has been extended to include the temperature dependence of the activation energy. The extraction of the model is based on the rigorous, first-principle theoretical calculations available in the literature. The new model is shown to provide consistently accurate values for base sheet resistance for both Si- and SiGe-base transistors over a wide range of temperatures. A model for plasma-induced bandgap narrowing suitable for implementation in a numerical simulator has been developed. The appropriate method of incorporating this model in a drift -diffusion solver is described. The importance of including this model for low temperature simulation is demonstrated. With these models in place, the enhanced simulator has been used for evaluating and designing the Si- and SiGe-base bipolar transistors. Silicon-germanium heterojunction bipolar transistors offer significant performance and cost advantages over conventional technologies in the production of integrated circuits for communications, computer and transportation applications. Their high frequency performance at low cost, will find widespread use in the currently exploding wireless communication market. However, the high performance SiGe-base transistors are prone to have a low common-emitter breakdown voltage. In this dissertation, a modification in the collector design is proposed for improving the breakdown voltage without sacrificing the high frequency performance. A comprehensive simulation study of p-n-p SiGe-base transistors has been performed. Different figures of merit such as drive current, current gain, cut -off frequency and Early voltage were compared between a graded germanium profile and an abrupt germanium profile. The differences in the performance level between the two profiles diminishes as the base width is scaled down.

A theoretical analysis of the current-voltage characteristics of solar cells. [and their energy conversion efficiency

NASA Technical Reports Server (NTRS)

Dunbar, P. M.; Hauser, J. R.

1976-01-01

Various mechanisms which limit the conversion efficiency of silicon solar cells were studied. The effects of changes in solar cell geometry such as layer thickness on performance were examined. The effects of various antireflecting layers were also examined. It was found that any single film antireflecting layer results in a significant surface loss of photons. The use of surface texturing techniques or low loss antireflecting layers can enhance by several percentage points the conversion efficiency of silicon cells. The basic differences between n(+)-p-p(+) and p(+)-n-n(+) cells are treated. A significant part of the study was devoted to the importance of surface region lifetime and heavy doping effects on efficiency. Heavy doping bandgap reduction effects are enhanced by low surface layer lifetimes, and conversely, the reduction in solar cell efficiency due to low surface layer lifetime is further enhanced by heavy doping effects. A series of computer studies is reported which seeks to determine the best cell structure and doping levels for maximum efficiency.

Method and apparatus for measuring low currents in capacitance devices

DOEpatents

Kopp, M.K.; Manning, F.W.; Guerrant, G.C.

1986-06-04

A method and apparatus for measuring subnanoampere currents in capacitance devices is reported. The method is based on a comparison of the voltages developed across the capacitance device with that of a reference capacitor in which the current is adjusted by means of a variable current source to produce a stable voltage difference. The current varying means of the variable current source is calibrated to provide a read out of the measured current. Current gain may be provided by using a reference capacitor which is larger than the device capacitance with a corresponding increase in current supplied through the reference capacitor. The gain is then the ratio of the reference capacitance to the device capacitance. In one illustrated embodiment, the invention makes possible a new type of ionizing radiation dose-rate monitor where dose-rate is measured by discharging a reference capacitor with a variable current source at the same rate that radiation is discharging an ionization chamber. The invention eliminates high-megohm resistors and low current ammeters used in low-current measuring instruments.

Tunnel-injected sub-260 nm ultraviolet light emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; Bajaj, Sanyam; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Rajan, Siddharth

2017-05-01

We report on tunnel-injected deep ultraviolet light emitting diodes (UV LEDs) configured with a polarization engineered Al0.75Ga0.25 N/In0.2Ga0.8 N tunnel junction structure. Tunnel-injected UV LED structure enables n-type contacts for both bottom and top contact layers. However, achieving Ohmic contact to wide bandgap n-AlGaN layers is challenging and typically requires high temperature contact metal annealing. In this work, we adopted a compositionally graded top contact layer for non-alloyed metal contact and obtained a low contact resistance of ρc = 4.8 × 10-5 Ω cm2 on n-Al0.75Ga0.25 N. We also observed a significant reduction in the forward operation voltage from 30.9 V to 19.2 V at 1 kA/cm2 by increasing the Mg doping concentration from 6.2 × 1018 cm-3 to 1.5 × 1019 cm-3. Non-equilibrium hole injection into wide bandgap Al0.75Ga0.25 N with Eg>5.2 eV was confirmed by light emission at 257 nm. This work demonstrates the feasibility of tunneling hole injection into deep UV LEDs and provides a structural design towards high power deep-UV emitters.

Dense Ge nanocrystals embedded in TiO2 with exponentially increased photoconduction by field effect.

PubMed

Lepadatu, A-M; Slav, A; Palade, C; Dascalescu, I; Enculescu, M; Iftimie, S; Lazanu, S; Teodorescu, V S; Ciurea, M L; Stoica, T

2018-03-20

Si and Ge nanocrystals in oxides are of a large interest for photo-effect applications due to the fine-tuning of the optical bandgap by quantum confinement in nanocrystals. In this work, dense Ge nanocrystals suitable for enhanced photoconduction were fabricated from 60% Ge in TiO 2 amorphous layers by low temperature rapid thermal annealing at 550 °C. An exponential increase of the photocurrent with the applied voltage was observed in coplanar structure of Ge nanocrystals composite films deposited on oxidized Si wafers. The behaviour was explained by field effect control of the Fermi level at the Ge nanocrystals-TiO 2 layer/substrate interfaces. The blue-shift of the absorption gap from bulk Ge value to 1.14 eV was evidenced in both photocurrent spectra and optical reflection-transmission experiments, in good agreement with quantum confinement induced bandgap broadening in Ge nanocrystal with sizes of about 5 nm as found from HRTEM and XRD investigations. A nonmonotonic spectral dependence of the refractive index is associated to the Ge nanocrystals formation. The nanocrystal morphology is also in good agreement with the Coulomb gap hopping mechanism of T -1/2 -type explaining the temperature dependence of the dark conduction.

(Al)GaInP/GaAs Tandem Solar Cells for Power Conversion at Elevated Temperature and High Concentration

DOE PAGES

Perl, Emmett E.; Simon, John; Friedman, Daniel J.; ...

2018-01-12

We demonstrate dual-junction (Al)GaInP/GaAs solar cells designed for operation at 400 degrees C and 1000x concentration. For the top junction, we compare (Al)GaInP solar cells with room-temperature bandgaps ranging from 1.9 to 2.0 eV. At 400 degrees C, we find that ~1.9 eV GaInP solar cells have a higher open-circuit voltage and a lower sheet resistance than higher bandgap (Al)GaInP solar cells, giving them a clear advantage in a tandem configuration. Dual-junction GaInP/GaAs solar cells are fabricated, and we show temperature-dependent external quantum efficiency, illuminated current-voltage, and concentrator measurements from 25 degrees C to 400 degrees C. We measure amore » power conversion efficiency of 16.4% +/- 1% at 400 degrees C and 345 suns for the best dual-junction cell, and discuss multiple pathways to improve the performance further. After undergoing a 200 h soak at 400 degrees C, the dual-junction device shows a relative loss in efficiency of only ~1%.« less

Methodology for Wide Band-Gap Device Dynamic Characterization

DOE PAGES

Zhang, Zheyu; Guo, Ben; Wang, Fei Fred; ...

2017-01-19

Here, the double pulse test (DPT) is a widely accepted method to evaluate the dynamic behavior of power devices. Considering the high switching-speed capability of wide band-gap devices, the test results are very sensitive to the alignment of voltage and current (V-I) measurements. Also, because of the shoot-through current induced by Cdv/dt (i.e., cross-talk), the switching losses of the nonoperating switch device in a phase-leg must be considered in addition to the operating device. This paper summarizes the key issues of the DPT, including components and layout design, measurement considerations, grounding effects, and data processing. Additionally, a practical method ismore » proposed for phase-leg switching loss evaluation by calculating the difference between the input energy supplied by a dc capacitor and the output energy stored in a load inductor. Based on a phase-leg power module built with 1200-V/50-A SiC MOSFETs, the test results show that this method can accurately evaluate the switching loss of both the upper and lower switches by detecting only one switching current and voltage, and it is immune to V-I timing misalignment errors.« less

(Al)GaInP/GaAs Tandem Solar Cells for Power Conversion at Elevated Temperature and High Concentration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perl, Emmett E.; Simon, John; Friedman, Daniel J.

We demonstrate dual-junction (Al)GaInP/GaAs solar cells designed for operation at 400 degrees C and 1000x concentration. For the top junction, we compare (Al)GaInP solar cells with room-temperature bandgaps ranging from 1.9 to 2.0 eV. At 400 degrees C, we find that ~1.9 eV GaInP solar cells have a higher open-circuit voltage and a lower sheet resistance than higher bandgap (Al)GaInP solar cells, giving them a clear advantage in a tandem configuration. Dual-junction GaInP/GaAs solar cells are fabricated, and we show temperature-dependent external quantum efficiency, illuminated current-voltage, and concentrator measurements from 25 degrees C to 400 degrees C. We measure amore » power conversion efficiency of 16.4% +/- 1% at 400 degrees C and 345 suns for the best dual-junction cell, and discuss multiple pathways to improve the performance further. After undergoing a 200 h soak at 400 degrees C, the dual-junction device shows a relative loss in efficiency of only ~1%.« less

Reduced graphene Oxide/ZnO nanostructures based rectifier diode

NASA Astrophysics Data System (ADS)

Bhatnagar, Sameeksha; Kumar, Ravi; Sharma, Monika; Kuanr, Bijoy K.

2017-05-01

We report on the fabrication and characterization of graphene oxide and reduced graphene oxide/ZnO nanostructures on ITO-coated glass substrates for the rectification properties of a heterojunction device. The composites of GO/ZnO and rGO/ZnO were synthesized by the modified Hummers method followed by annealing process in N2 and H2 ambient atmosphere at various temperatures. The structural and compositional analysis of the composite material have been investigated using X-ray diffraction spectroscopy and Raman spectroscopy. The optical properties of the composite films were studied by UV-visible spectroscopy and the band-gap was obtained by Tauc's plot. The band-gap reduces to 2.4 eV for the composite film as compared to ZnO film 3.26 eV. The I-V characteristics of ZnO thin films and rGO/ZnO films were done for different light conditions viz dark, ambient light and UV-illumination. It has been observed that the threshold voltage decreases when the sample was placed in UV-illumination. A direct variation in photo-response is revealed with the bias voltage as well as UV illumination. The fabricated device could be used as an Ultraviolet Photo-detector.

Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties

NASA Astrophysics Data System (ADS)

Jian, Guangzhong; He, Qiming; Mu, Wenxiang; Fu, Bo; Dong, Hang; Qin, Yuan; Zhang, Ying; Xue, Huiwen; Long, Shibing; Jia, Zhitai; Lv, Hangbing; Liu, Qi; Tao, Xutang; Liu, Ming

2018-01-01

β-Ga2O3 is an ultra-wide bandgap semiconductor with applications in power electronic devices. Revealing the transport characteristics of β-Ga2O3 devices at various temperatures is important for improving device performance and reliability. In this study, we fabricated a Pt/β-Ga2O3 Schottky barrier diode with good performance characteristics, such as a low ON-resistance, high forward current, and a large rectification ratio. Its temperature-dependent current-voltage and capacitance-voltage characteristics were measured at various temperatures. The characteristic diode parameters were derived using thermionic emission theory. The ideality factor n was found to decrease from 2.57 to 1.16 while the zero-bias barrier height Φb0 increased from 0.47 V to 1.00 V when the temperature was increased from 125 K to 350 K. This was explained by the Gaussian distribution of barrier height inhomogeneity. The mean barrier height Φ ¯ b0 = 1.27 V and zero-bias standard deviation σ0 = 0.13 V were obtained. A modified Richardson plot gave a Richardson constant A* of 36.02 A.cm-2.K-2, which is close to the theoretical value of 41.11 A.cm-2.K-2. The differences between the barrier heights determined using the capacitance-voltage and current-voltage curves were also in line with the Gaussian distribution of barrier height inhomogeneity.

Development of a 2.0 eV AlGaInP Solar Cell Grown by OMVPE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perl, Emmett E.; Simon, John; Geisz, John F.

2015-06-14

AlGaInP solar cells with a bandgap (Eg) of ~2.0 eV are developed for use in next-generation multijunction photovoltaic devices. This material system is of great interest for both space and concentrator photovoltaics due to its high bandgap, which enables the development of high-efficiency five-junction and six-junction devices and is also useful for solar cells operated at elevated temperatures. In this work, we explore the conditions for the Organometallic Vapor Phase Epitaxy (OMVPE) growth of AlGaInP and study their effects on cell performance. A ~2.0 eV AlGaInP solar cell is demonstrated with an open circuit voltage (VOC) of 1.59V, a bandgap-voltagemore » offset (WOC) of 420mV, a fill factor (FF) of 88.0%, and an efficiency of 14.8%. These AlGaInP cells have attained a similar FF, WOC and internal quantum efficiency (IQE) to the best upright GaInP cells grown in our lab to date.« less

Understanding Charge Transport in Mixed Networks of Semiconducting Carbon Nanotubes

PubMed Central

2016-01-01

The ability to select and enrich semiconducting single-walled carbon nanotubes (SWNT) with high purity has led to a fast rise of solution-processed nanotube network field-effect transistors (FETs) with high carrier mobilities and on/off current ratios. However, it remains an open question whether it is best to use a network of only one nanotube species (monochiral) or whether a mix of purely semiconducting nanotubes but with different bandgaps is sufficient for high performance FETs. For a range of different polymer-sorted semiconducting SWNT networks, we demonstrate that a very small amount of narrow bandgap nanotubes within a dense network of large bandgap nanotubes can dominate the transport and thus severely limit on-currents and effective carrier mobility. Using gate-voltage-dependent electroluminescence, we spatially and spectrally reveal preferential charge transport that does not depend on nominal network density but on the energy level distribution within the network and carrier density. On the basis of these results, we outline rational guidelines for the use of mixed SWNT networks to obtain high performance FETs while reducing the cost for purification. PMID:26867006

A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lamichhane, Ranjan; Ericson, Milton Nance; Frank, Steven Shane

2014-01-01

Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz tomore » 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.« less

Study on Control Scheme for the Inverters in Low Voltage Microgrid with Nonlinear Loads

NASA Astrophysics Data System (ADS)

Xu, Jiqiang; Lu, Wenzhou; Wu, Lei

2017-05-01

There are a lot of nonlinear loads in real low voltage microgrid system. It will cause serious output voltage and grid current harmonic distortions problems in island and grid-connected modes, respectively. To solve this problem, this paper proposes a droop control scheme with quasi-proportion and resonant (quasi-PR) controller based on αβ stationary reference frame to make microgrid smoothly switch between grid-connected and island modes without changing control method. Moreover, in island mode, not only stable output voltage and frequency, but also reduced output voltage harmonics with added nonlinear loads can be achieved; In grid-connected mode, not only constant power, but also reduced grid current harmonics can be achieved. Simulation results verify the effectiveness of the proposed control scheme.

Methods, systems and apparatus for controlling third harmonic voltage when operating a multi-space machine in an overmodulation region

DOEpatents

Perisic, Milun; Kinoshita, Michael H; Ranson, Ray M; Gallegos-Lopez, Gabriel

2014-06-03

Methods, system and apparatus are provided for controlling third harmonic voltages when operating a multi-phase machine in an overmodulation region. The multi-phase machine can be, for example, a five-phase machine in a vector controlled motor drive system that includes a five-phase PWM controlled inverter module that drives the five-phase machine. Techniques for overmodulating a reference voltage vector are provided. For example, when the reference voltage vector is determined to be within the overmodulation region, an angle of the reference voltage vector can be modified to generate a reference voltage overmodulation control angle, and a magnitude of the reference voltage vector can be modified, based on the reference voltage overmodulation control angle, to generate a modified magnitude of the reference voltage vector. By modifying the reference voltage vector, voltage command signals that control a five-phase inverter module can be optimized to increase output voltages generated by the five-phase inverter module.

A frequency-sensing readout using piezoelectric sensors for sensing of physiological signals.

PubMed

Buxi, Dilpreet; Redouté, Jean-Michel; Yuce, Mehmet Rasit

2014-01-01

Together with a charge or voltage amplifier, piezoelectric sensors are commonly used to pick up physiological vibrations from the body. As an alternative to chopper or auto-zero amplifiers, frequency sensing is known in literature to provide advantages of noise immunity, interfacing to digital readout systems as well as tunable range of sensing. A frequency-sensing readout circuit for sensing low voltage signals from piezoelectric sensors is successfully developed and tested in this work. The output voltage of a piezoelectric sensor is fed to a varactor, which is part of an Colpitts LC oscillator. The oscillation frequency is converted into a voltage using a phase locked loop. The circuit is compared to a reference design in terms of linearity, noise and transfer function. The readout has a input-referred noise voltage of 2.24μV/√Hz and consumes 15 mA at 5V supply. Arterial pulse wave signals and the cardiac vibrations from the chest are measured from one subject to show the proof of concept of the proposed readout. The results of this work are intended to contribute towards alternative low noise analog front end designs for piezoelectric sensors.

A new venous infusion pathway monitoring system.

PubMed

Maki, Hiromichi; Yonezawa, Yoshiharu; Ogawa, Hidekuni; Ninomiya, Ishio; Sata, Koji; Hamada, Shingo; Caldwell, W Morton

2007-01-01

A new infusion catheter pathway monitoring system employing linear integrated circuits and a low-power 8-bit single chip microcomputer has been developed for hospital and home use. The sensor consists of coaxial three-layer conductive tapes wrapped around the polyvinyl chloride infusion tube. The inner tape is the main electrode, which records an AC (alternating current) voltage induced on the patient's body by electrostatic coupling from the normal 100 volt, 60 Hz AC power line wiring field in the patient's room. The outside tape layer is a reference electrode to monitor the AC voltage around the main electrode. The center tape layer is connected to system ground and functions as a shield. The microcomputer calculates the ratio of the induced AC voltages recorded by the main and reference electrodes and if the ratio indicates a detached infusion, alerts the nursing station, via the nurse call system or low transmitting power mobile phone.

DC attenuation meter

DOEpatents

Hargrove, Douglas L.

2004-09-14

A portable, hand-held meter used to measure direct current (DC) attenuation in low impedance electrical signal cables and signal attenuators. A DC voltage is applied to the signal input of the cable and feedback to the control circuit through the signal cable and attenuators. The control circuit adjusts the applied voltage to the cable until the feedback voltage equals the reference voltage. The "units" of applied voltage required at the cable input is the system attenuation value of the cable and attenuators, which makes this meter unique. The meter may be used to calibrate data signal cables, attenuators, and cable-attenuator assemblies.

Hybrid bandgap engineering for super-hetero-epitaxial semiconductor materials, and products thereof

NASA Technical Reports Server (NTRS)

Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor); Elliott, James R. (Inventor)

2012-01-01

"Super-hetero-epitaxial" combinations comprise epitaxial growth of one material on a different material with different crystal structure. Compatible crystal structures may be identified using a "Tri-Unity" system. New bandgap engineering diagrams are provided for each class of combination, based on determination of hybrid lattice constants for the constituent materials in accordance with lattice-matching equations. Using known bandgap figures for previously tested materials, new materials with lattice constants that match desired substrates and have the desired bandgap properties may be formulated by reference to the diagrams and lattice matching equations. In one embodiment, this analysis makes it possible to formulate new super-hetero-epitaxial semiconductor systems, such as systems based on group IV alloys on c-plane LaF.sub.3; group IV alloys on c-plane langasite; Group III-V alloys on c-plane langasite; and group II-VI alloys on c-plane sapphire.

Direct model-based predictive control scheme without cost function for voltage source inverters with reduced common-mode voltage

NASA Astrophysics Data System (ADS)

Kim, Jae-Chang; Moon, Sung-Ki; Kwak, Sangshin

2018-04-01

This paper presents a direct model-based predictive control scheme for voltage source inverters (VSIs) with reduced common-mode voltages (CMVs). The developed method directly finds optimal vectors without using repetitive calculation of a cost function. To adjust output currents with the CMVs in the range of -Vdc/6 to +Vdc/6, the developed method uses voltage vectors, as finite control resources, excluding zero voltage vectors which produce the CMVs in the VSI within ±Vdc/2. In a model-based predictive control (MPC), not using zero voltage vectors increases the output current ripples and the current errors. To alleviate these problems, the developed method uses two non-zero voltage vectors in one sampling step. In addition, the voltage vectors scheduled to be used are directly selected at every sampling step once the developed method calculates the future reference voltage vector, saving the efforts of repeatedly calculating the cost function. And the two non-zero voltage vectors are optimally allocated to make the output current approach the reference current as close as possible. Thus, low CMV, rapid current-following capability and sufficient output current ripple performance are attained by the developed method. The results of a simulation and an experiment verify the effectiveness of the developed method.

A new approach to high-efficiency multi-band-gap solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barnham, K.W.J.; Duggan, G.

1990-04-01

The advantages of using multi-quantum-well or superlattice systems as the absorbers in concentrator solar cells are discussed. By adjusting the quantum-well width, an effective band-gap variation that covers the high-efficiency region of the solar spectrum can be obtained. Higher efficiencies should result from the ability to optimize separately current and voltage generating factors. Suitable structures to ensure good carrier separation and collection and to obtain higher open-circuit voltages are presented using the (AlGa)As/GaAs/(InGa)As system. Efficiencies above existing single-band-gap limits should be achievable, with upper limits in excess of 40%.

Universal single point liquid level sensor

DOEpatents

Kronberg, J.W.

1992-10-27

A liquid level detector comprises a thermistor and circuitry for determining electrically if the thermistor is wet or dry and additionally, and continuously, if the thermistor is open or shorted. The voltage across the thermistor is filtered to remove low frequency electrical noise, then compared with a reference low voltage to determine if shorted and to a transition voltage chosen to be between the thermistor's normal wet and dry voltages to determine if the thermistor is wet or dry. The voltage is also compared to the supply voltage using a CMOS gate circuit element to determine if the thermistor is open. The gate passes both faults on to an LED to signal that a fault condition exists or indicates by another LED the wet or dry condition of the thermistor. A pump may be activated through a relay if the thermistor tests wet or dry, as desired. 1 figure.

Universal single point liquid level sensor

DOEpatents

Kronberg, James W.

1992-01-01

A liquid level detector comprises a thermistor and circuitry for determining electrically if the thermistor is wet or dry and additionally, and continuously, if the thermistor is open or shorted. The voltage across the thermistor is filtered to remove low frequency electrical noise, then compared with a reference low voltage to determine if shorted and to a transition voltage chosen to be between the thermistor's normal wet and dry voltages to determine if the thermistor is wet or dry. The voltage is also compared to the supply voltage using a CMOS gate circuit element to determine if the thermistor is open. The gate passes both faults on to an LED to signal that a fault condition exists or indicates by another LED the wet or dry condition of the thermistor. A pump may be activated through a relay if the thermistor tests wet or dry, as desired.

Fabrication and characterization of active nanostructures

NASA Astrophysics Data System (ADS)

Opondo, Noah F.

Three different nanostructure active devices have been designed, fabricated and characterized. Junctionless transistors based on highly-doped silicon nanowires fabricated using a bottom-up fabrication approach are first discussed. The fabrication avoids the ion implantation step since silicon nanowires are doped in-situ during growth. Germanium junctionless transistors fabricated with a top down approach starting from a germanium on insulator substrate and using a gate stack of high-k dielectrics and GeO2 are also presented. The levels and origin of low-frequency noise in junctionless transistor devices fabricated from silicon nanowires and also from GeOI devices are reported. Low-frequency noise is an indicator of the quality of the material, hence its characterization can reveal the quality and perhaps reliability of fabricated transistors. A novel method based on low-frequency noise measurement to envisage trap density in the semiconductor bandgap near the semiconductor/oxide interface of nanoscale silicon junctionless transistors (JLTs) is presented. Low-frequency noise characterization of JLTs biased in saturation is conducted at different gate biases. The noise spectrum indicates either a Lorentzian or 1/f. A simple analysis of the low-frequency noise data leads to the density of traps and their energy within the semiconductor bandgap. The level of noise in silicon JLT devices is lower than reported values on transistors fabricated using a top-down approach. This noise level can be significantly improved by improving the quality of dielectric and the channel interface. A micro-vacuum electron device based on silicon field emitters for cold cathode emission is also presented. The presented work utilizes vertical Si nanowires fabricated by means of self-assembly, standard lithography and etching techniques as field emitters in this dissertation. To obtain a high nanowire density, hence a high current density, a simple and inexpensive Langmuir Blodgett technique to deposit silica nanoparticles as a mask to etch Si is adopted. Fabrication and characterization of a metal-gated microtriode with a high current density and low operating voltage are presented.

Design of Low Inductance Switching Power Cell for GaN HEMT Based Inverter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gurpinar, Emre; Iannuzzo, Francesco; Yang, Yongheng

Here in this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3LANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which mainly contribute to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a fourlayer Printed Circuit Board (PCB) with the aim to maximize the switching performance of GaN HEMTs is explained. The design of gate drivers for the GaN HEMT devicesmore » is presented. Parasitic inductance and resistance of the proposed design are extracted with finite element analysis and discussed. Common mode behaviours based on the SPICE model of the converter are analyzed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance.« less

Design and Development of an Equipotential Voltage Reference (Grounding) System for a Low-Cost Rapid-Development Modular Spacecraft Architecture

NASA Technical Reports Server (NTRS)

Lukash, James A.; Daley, Earl

2011-01-01

This work describes the design and development effort to adapt rapid-development space hardware by creating a ground system using solutions of low complexity, mass, & cost. The Lunar Atmosphere and Dust Environment Explorer (LADEE) spacecraft is based on the modular common spacecraft bus architecture developed at NASA Ames Research Center. The challenge was building upon the existing modular common bus design and development work and improving the LADEE spacecraft design by adding an Equipotential Voltage Reference (EVeR) system, commonly referred to as a ground system. This would aid LADEE in meeting Electromagnetic Environmental Effects (E3) requirements, thereby making the spacecraft more compatible with itself and its space environment. The methods used to adapt existing hardware are presented, including provisions which may be used on future spacecraft.

100-period InGaAsP/InGaP superlattice solar cell with sub-bandgap quantum efficiency approaching 80%

DOE PAGES

Sayed, Islam E. H.; Jain, Nikhil; Steiner, Myles A.; ...

2017-08-25

Here, InGaAsP/InGaP quantum well (QW) structures are promising materials for next generation photovoltaic devices because of their tunable bandgap (1.50-1.80 eV) and being aluminum-free. However, the strain-balance limitations have previously limited light absorption in the QW region and constrained the external quantum efficiency (EQE) values beyond the In 0.49Ga 0.51P band-edge to less than 25%. In this work, we show that implementing a hundred period lattice matched InGaAsP/InGaP superlattice solar cell with more than 65% absorbing InGaAsP well resulted in more than 2x improvement in EQE values than previously reported strain balanced approaches. In addition, processing the devices with amore » rear optical reflector resulted in strong Fabry-Perot resonance oscillations and the EQE values were highly improved in the vicinity of these peaks, resulting in a short circuit current improvement of 10% relative to devices with a rear optical filter. These enhancements have resulted in an InGaAsP/InGaP superlattice solar cell with improved peak sub-bandgap EQE values exceeding 75% at 700 nm, an improvement in the short circuit current of 26% relative to standard InGaP devices, and an enhanced bandgap-voltage offset (W oc) of 0.4 V.« less

Proofs for the Wave Theory of Plants

NASA Astrophysics Data System (ADS)

Wagner, Orvin E.

1997-03-01

Oscillatory behavior in plants. (2)Standing waves observed coming from probes equally spaced up tree trunks and freshly cut live wood samples. (3)Beat frequencies observed while applying AC voltages to plants. (4)Plant length quantization. (5)Plant growth angle and voltage quantization with respect to the gravitational field. (6)The measurement of plant frequences with a low frequency spectrum analyzer which correlate with the frequencies observed by other means such as by measuring plant lengths, considered as half wavelengths, and beat frequencies. (7)Voltages obtained from insulated, isolated from light, diode dies placed in slits in tree trunks. Diodes become relatively low impedance sources for voltages as high as eight volts. Diodes indicate charge separating longitudinal standing waves sweeping up and down a tree trunk. Longitudinal waves also indicated by plant structure. (8)The measured discrete wave velocities appear to be dependent on their direction of travel with respect to the gravitational field. These provide growth references for the plant and a wave guide affect. For references see Wagner Research Laboratory Web Page.

High-efficiency photovoltaic cells

DOEpatents

Yang, H.T.; Zehr, S.W.

1982-06-21

High efficiency solar converters comprised of a two cell, non-lattice matched, monolithic stacked semiconductor configuration using optimum pairs of cells having bandgaps in the range 1.6 to 1.7 eV and 0.95 to 1.1 eV, and a method of fabrication thereof, are disclosed. The high band gap subcells are fabricated using metal organic chemical vapor deposition (MOCVD), liquid phase epitaxy (LPE) or molecular beam epitaxy (MBE) to produce the required AlGaAs layers of optimized composition, thickness and doping to produce high performance, heteroface homojunction devices. The low bandgap subcells are similarly fabricated from AlGa(As)Sb compositions by LPE, MBE or MOCVD. These subcells are then coupled to form a monolithic structure by an appropriate bonding technique which also forms the required transparent intercell ohmic contact (IOC) between the two subcells. Improved ohmic contacts to the high bandgap semiconductor structure can be formed by vacuum evaporating to suitable metal or semiconductor materials which react during laser annealing to form a low bandgap semiconductor which provides a low contact resistance structure.

Method and Apparatus for In-Situ Health Monitoring of Solar Cells in Space

NASA Technical Reports Server (NTRS)

Prokop, Norman F. (Inventor); Krasowski, Michael J. (Inventor)

2016-01-01

Embodiments of the present invention describe an apparatus including an oscillator, a ramp generator, and an inverter. The oscillator is configured to generate a waveform comprising a low time and a high time. The inverter is configured to receive the waveform generated by the oscillator, and invert the waveform. The ramp generator is configured to increase a gate control voltage of a transistor connected to a solar cell, and rapidly decrease the gate control voltage of the transistor. During the low time, a measurement of a current and a voltage of the solar cell is performed. During the high time, a measurement of a current of a shorted cell and a voltage reference is performed.

Research on laser detonation pulse circuit with low-power based on super capacitor

NASA Astrophysics Data System (ADS)

Wang, Hao-yu; Hong, Jin; He, Aifeng; Jing, Bo; Cao, Chun-qiang; Ma, Yue; Chu, En-yi; Hu, Ya-dong

2018-03-01

According to the demand of laser initiating device miniaturization and low power consumption of weapon system, research on the low power pulse laser detonation circuit with super capacitor. Established a dynamic model of laser output based on super capacitance storage capacity, discharge voltage and programmable output pulse width. The output performance of the super capacitor under different energy storage capacity and discharge voltage is obtained by simulation. The experimental test system was set up, and the laser diode of low power pulsed laser detonation circuit was tested and the laser output waveform of laser diode in different energy storage capacity and discharge voltage was collected. Experiments show that low power pulse laser detonation based on super capacitor energy storage circuit discharge with high efficiency, good transient performance, for a low power consumption requirement, for laser detonation system and low power consumption and provide reference light miniaturization of engineering practice.

Coordinated single-phase control scheme for voltage unbalance reduction in low voltage network.

PubMed

Pullaguram, Deepak; Mishra, Sukumar; Senroy, Nilanjan

2017-08-13

Low voltage (LV) distribution systems are typically unbalanced in nature due to unbalanced loading and unsymmetrical line configuration. This situation is further aggravated by single-phase power injections. A coordinated control scheme is proposed for single-phase sources, to reduce voltage unbalance. A consensus-based coordination is achieved using a multi-agent system, where each agent estimates the averaged global voltage and current magnitudes of individual phases in the LV network. These estimated values are used to modify the reference power of individual single-phase sources, to ensure system-wide balanced voltages and proper power sharing among sources connected to the same phase. Further, the high X / R ratio of the filter, used in the inverter of the single-phase source, enables control of reactive power, to minimize voltage unbalance locally. The proposed scheme is validated by simulating a LV distribution network with multiple single-phase sources subjected to various perturbations.This article is part of the themed issue 'Energy management: flexibility, risk and optimization'. © 2017 The Author(s).

Properties and Applications of Varistor-Transistor Hybrid Devices

NASA Astrophysics Data System (ADS)

Pandey, R. K.; Stapleton, William A.; Sutanto, Ivan; Scantlin, Amanda A.; Lin, Sidney

2014-05-01

The nonlinear current-voltage characteristics of a varistor device are modified with the help of external agents, resulting in tuned varistor-transistor hybrid devices with multiple applications. The substrate used to produce these hybrid devices belongs to the modified iron titanate family with chemical formula 0.55FeTiO3·0.45Fe2O3 (IHC45), which is a prominent member of the ilmenite-hematite solid-solution series. It is a wide-bandgap magnetic oxide semiconductor. Electrical resistivity and Seebeck coefficient measurements from room temperature to about 700°C confirm that it retains its p-type nature for the entire temperature range. The direct-current (DC) and alternating-current (AC) properties of these hybrid devices are discussed and their applications identified. It is shown here that such varistor embedded ceramic transistors with many interesting properties and applications can be mass produced using incredibly simple structures. The tuned varistors by themselves can be used for current amplification and band-pass filters. The transistors on the other hand could be used to produce sensors, voltage-controlled current sources, current-controlled voltage sources, signal amplifiers, and low-band-pass filters. We believe that these devices could be suitable for a number of applications in consumer and defense electronics, high-temperature and space electronics, bioelectronics, and possibly also for electronics specific to handheld devices.

Device for monitoring cell voltage

DOEpatents

Doepke, Matthias [Garbsen, DE; Eisermann, Henning [Edermissen, DE

2012-08-21

A device for monitoring a rechargeable battery having a number of electrically connected cells includes at least one current interruption switch for interrupting current flowing through at least one associated cell and a plurality of monitoring units for detecting cell voltage. Each monitoring unit is associated with a single cell and includes a reference voltage unit for producing a defined reference threshold voltage and a voltage comparison unit for comparing the reference threshold voltage with a partial cell voltage of the associated cell. The reference voltage unit is electrically supplied from the cell voltage of the associated cell. The voltage comparison unit is coupled to the at least one current interruption switch for interrupting the current of at least the current flowing through the associated cell, with a defined minimum difference between the reference threshold voltage and the partial cell voltage.

Voltage control in Z-source inverter using low cost microcontroller for undergraduate approach

NASA Astrophysics Data System (ADS)

Zulkifli, Shamsul Aizam; Sewang, Mohd Rizal; Salimin, Suriana; Shah, Noor Mazliza Badrul

2017-09-01

This paper is focussing on controlling the output voltage of Z-Source Inverter (ZSI) using a low cost microcontroller with MATLAB-Simulink that has been used for interfacing the voltage control at the output of ZSI. The key advantage of this system is the ability of a low cost microcontroller to process the voltage control blocks based on the mathematical equations created in MATLAB-Simulink. The Proportional Integral (PI) control equations are been applied and then, been downloaded to the microcontroller for observing the changes on the voltage output regarding to the changes on the reference on the PI. The system has been simulated in MATLAB and been verified with the hardware setup. As the results, the Raspberry Pi and Arduino that have been used in this work are able to respond well when there is a change of ZSI output. It proofed that, by applying/introducing this method to student in undergraduate level, it will help the student to understand more on the process of the power converter combine with a control feedback function that can be applied at low cost microcontroller.

A low-drift, low-noise, multichannel dc voltage source for segmented-electrode Paul traps

NASA Astrophysics Data System (ADS)

Beev, Nikolai; Fenske, Julia-Aileen; Hannig, Stephan; Schmidt, Piet O.

2017-05-01

We present the design, construction, and characterization of a multichannel, low-drift, low-noise dc voltage source specially designed for biasing the electrodes of segmented linear Paul traps. The system produces 20 output voltage pairs having a common-mode range of 0 to +120 V with 3.7 mV/LSB (least significant bit) resolution and differential ranges of ±5 V with 150 μV/LSB or ±16 V with 610 μV/LSB resolution. All common-mode and differential voltages are independently controllable, and all pairs share the same ground reference. The measured drift of the voltages after warm-up is lower than 1 LSB peak-to-peak on the time scale of 2 h. The noise of an output voltage measured with respect to ground is <10 μVRMS within 10 Hz-100 kHz, with spectral density lower than 3 nV Hz-1/2 above 50 kHz. The performance of the system is limited by the external commercial multichannel DAC unit NI 9264, and in principle, it is possible to achieve higher stability and lower noise with the same voltage ranges. The system has a compact, modular, and scalable architecture, having all parts except for the DAC chassis housed within a single 19″ 3HE rack.

Mixed-Halide Perovskites with Stabilized Bandgaps.

PubMed

Xiao, Zhengguo; Zhao, Lianfeng; Tran, Nhu L; Lin, Yunhui Lisa; Silver, Scott H; Kerner, Ross A; Yao, Nan; Kahn, Antoine; Scholes, Gregory D; Rand, Barry P

2017-11-08

One merit of organic-inorganic hybrid perovskites is their tunable bandgap by adjusting the halide stoichiometry, an aspect critical to their application in tandem solar cells, wavelength-tunable light emitting diodes (LEDs), and lasers. However, the phase separation of mixed-halide perovskites caused by light or applied bias results in undesirable recombination at iodide-rich domains, meaning open-circuit voltage (V OC ) pinning in solar cells and infrared emission in LEDs. Here, we report an approach to suppress halide redistribution by self-assembled long-chain organic ammonium capping layers at nanometer-sized grain surfaces. Using the stable mixed-halide perovskite films, we are able to fabricate efficient and wavelength-tunable perovskite LEDs from infrared to green with high external quantum efficiencies of up to 5%, as well as linearly tuned V OC from 1.05 to 1.45 V in solar cells.

Highly improved photo-induced bias stability of sandwiched triple layer structure in sol-gel processed fluorine-doped indium zinc oxide thin film transistor

NASA Astrophysics Data System (ADS)

Kim, Dongha; Park, Hyungjin; Bae, Byeong-Soo

2016-03-01

In order to improve the reliability of TFT, an Al2O3 insulating layer is inserted between active fluorine doped indium zinc oxide (IZO:F) thin films to form a sandwiched triple layer. All the thin films were fabricated via low-cost sol-gel process. Due to its large energy bandgap and high bonding energy with oxygen atoms, the Al2O3 layer acts as a photo-induced positive charge blocking layer that effectively blocks the migration of both holes and V o2+ toward the interface between the gate insulator and the semiconductor. The inserted Al2O3 triple layer exhibits a noticeably low turn on voltage shift of -0.7 V under NBIS as well as the good TFT performance with a mobility of 10.9 cm2/V ṡ s. We anticipate that this approach can be used to solve the stability issues such as NBIS, which is caused by inescapable oxygen vacancies.

Rational Design of High-Performance Wide-Bandgap (≈2 eV) Polymer Semiconductors as Electron Donors in Organic Photovoltaics Exhibiting High Open Circuit Voltages (≈1 V).

PubMed

Chochos, Christos L; Katsouras, Athanasios; Gasparini, Nicola; Koulogiannis, Chrysanthos; Ameri, Tayebeh; Brabec, Christoph J; Avgeropoulos, Apostolos

2017-01-01

Systematic optimization of the chemical structure of wide-bandgap (≈2.0 eV) "donor-acceptor" copolymers consisting of indacenodithiophene or indacenodithieno[3,2-b]thiophene as the electron-rich unit and thieno[3,4-c]pyrrole-4,6-dione as the electron-deficient moiety in terms of alkyl side chain engineering and distance of the electron-rich and electron-deficient monomers within the repeat unit of the polymer chain results in high-performance electron donor materials for organic photovoltaics. Specifically, preliminary results demonstrate extremely high open circuit voltages (V oc s) of ≈1.0 V, reasonable short circuit current density (J sc ) of around 11 mA cm -2 , and moderate fill factors resulting in efficiencies close to 6%. All the devices are fabricated in an inverted architecture with the photoactive layer processed by doctor blade equipment, showing the compatibility with roll-to-roll large-scale manufacturing processes. From the correlation of the chemical structure-optoelectronic properties-photovoltaic performance, a rational guide toward further optimization of the chemical structure in this family of copolymers, has been achieved. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mauch, Daniel L.; Zutavern, Fred J.; Delhotal, Jarod J.

A system is presented that is capable of measuring sub-nanosecond reverse recovery times of diodes in wide-bandgap materials over a wide range of forward biases (0 – 1 A) and reverse voltages (0 – 10 kV). The system utilizes the step recovery technique and comprises a cable pulser based on a silicon (Si) Photoconductive Semiconductor Switch (PCSS) triggered with an Ultra Short Pulse Laser (USPL), a pulse charging circuit, a diode biasing circuit, and resistive and capacitive voltage monitors. The PCSS based cable pulser transmits a 130 ps rise time pulse down a transmission line to a capacitively coupled diode,more » which acts as the terminating element of the transmission line. The temporal nature of the pulse reflected by the diode provides the reverse recovery characteristics of the diode, measured with a high bandwidth capacitive probe integrated into the cable pulser. Furthermore, this system was used to measure the reverse recovery times (including the creation and charging of the depletion region) for two Avogy gallium nitride (GaN) diodes; the initial reverse recovery time was found to be 4 ns and varied minimally over reverse biases of 50 – 100 V and forward current of 1 – 100 mA.« less

Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes

DOE PAGES

Mauch, Daniel L.; Zutavern, Fred J.; Delhotal, Jarod J.; ...

2017-03-01

A system is presented that is capable of measuring sub-nanosecond reverse recovery times of diodes in wide-bandgap materials over a wide range of forward biases (0 – 1 A) and reverse voltages (0 – 10 kV). The system utilizes the step recovery technique and comprises a cable pulser based on a silicon (Si) Photoconductive Semiconductor Switch (PCSS) triggered with an Ultra Short Pulse Laser (USPL), a pulse charging circuit, a diode biasing circuit, and resistive and capacitive voltage monitors. The PCSS based cable pulser transmits a 130 ps rise time pulse down a transmission line to a capacitively coupled diode,more » which acts as the terminating element of the transmission line. The temporal nature of the pulse reflected by the diode provides the reverse recovery characteristics of the diode, measured with a high bandwidth capacitive probe integrated into the cable pulser. Furthermore, this system was used to measure the reverse recovery times (including the creation and charging of the depletion region) for two Avogy gallium nitride (GaN) diodes; the initial reverse recovery time was found to be 4 ns and varied minimally over reverse biases of 50 – 100 V and forward current of 1 – 100 mA.« less

Matching Charge Extraction Contact for Wide-Bandgap Perovskite Solar Cells.

PubMed

Lin, Yuze; Chen, Bo; Zhao, Fuwen; Zheng, Xiaopeng; Deng, Yehao; Shao, Yuchuan; Fang, Yanjun; Bai, Yang; Wang, Chunru; Huang, Jinsong

2017-07-01

Efficient wide-bandgap (WBG) perovskite solar cells are needed to boost the efficiency of silicon solar cells to beyond Schottky-Queisser limit, but they suffer from a larger open circuit voltage (V OC ) deficit than narrower bandgap ones. Here, it is shown that one major limitation of V OC in WBG perovskite solar cells comes from the nonmatched energy levels of charge transport layers. Indene-C60 bisadduct (ICBA) with higher-lying lowest-unoccupied-molecular-orbital is needed for WBG perovskite solar cells, while its energy-disorder needs to be minimized before a larger V OC can be observed. A simple method is applied to reduce the energy disorder by isolating isomer ICBA-tran3 from the as-synthesized ICBA-mixture. WBG perovskite solar cells with ICBA-tran3 show enhanced V OC by 60 mV, reduced V OC deficit of 0.5 V, and then a record stabilized power conversion efficiency of 18.5%. This work points out the importance of matching the charge transport layers in perovskite solar cells when the perovskites have a different composition and energy levels. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Probing dynamic behavior of electric fields and band diagrams in complex semiconductor heterostructures

NASA Astrophysics Data System (ADS)

Turkulets, Yury; Shalish, Ilan

2018-01-01

Modern bandgap engineered electronic devices are typically made of multi-semiconductor multi-layer heterostructures that pose a major challenge to silicon-era characterization methods. As a result, contemporary bandgap engineering relies mostly on simulated band structures that are hardly ever verified experimentally. Here, we present a method that experimentally evaluates bandgap, band offsets, and electric fields, in complex multi-semiconductor layered structures, and it does so simultaneously in all the layers. The method uses a modest optical photocurrent spectroscopy setup at ambient conditions. The results are analyzed using a simple model for electro-absorption. As an example, we apply the method to a typical GaN high electron mobility transistor structure. Measurements under various external electric fields allow us to experimentally construct band diagrams, not only at equilibrium but also under any other working conditions of the device. The electric fields are then used to obtain the charge carrier density and mobility in the quantum well as a function of the gate voltage over the entire range of operating conditions of the device. The principles exemplified here may serve as guidelines for the development of methods for simultaneous characterization of all the layers in complex, multi-semiconductor structures.

Low-to-Medium Power Single Chip Digital Controlled DC-DC Regulator for Point-of-Load Applications

NASA Technical Reports Server (NTRS)

Adell, Philippe C. (Inventor); Bakkaloglu, Bertan (Inventor); Vermeire, Bert (Inventor); Liu, Tao (Inventor)

2015-01-01

A DC-DC converter for generating a DC output voltage includes: a digitally controlled pulse width modulator (DPWM) for controlling a switching power stage to supply a varying voltage to an inductor; and a digital voltage feedback circuit for controlling the DPWM in accordance with a feedback voltage corresponding to the DC output voltage, the digital voltage feedback circuit including: a first voltage controlled oscillator for converting the feedback voltage into a first frequency signal and to supply the first frequency signal to a first frequency discriminator; a second voltage controlled oscillator for converting a reference voltage into a second frequency signal and to supply the second frequency signal to a second frequency discriminator; a digital comparator for comparing digital outputs of the first and second frequency discriminators and for outputting a digital feedback signal; and a controller for controlling the DPWM in accordance with the digital feedback signal.

Densely Aligned Graphene Nanoribbon Arrays and Bandgap Engineering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Su, Justin; Chen, Changxin; Gong, Ming

Graphene has attracted great interest for future electronics due to its high mobility and high thermal conductivity. However, a two-dimensional graphene sheet behaves like a metal, lacking a bandgap needed for the key devices components such as field effect transistors (FETs) in digital electronics. It has been shown that, partly due to quantum confinement, graphene nanoribbons (GNRs) with ~2 nm width can open up sufficient bandgaps and evolve into semiconductors to exhibit high on/off ratios useful for FETs. However, a challenging problem has been that, such ultra-narrow GNRs (~2 nm) are difficult to fabricate, especially for GNRs with smooth edgesmore » throughout the ribbon length. Despite high on/off ratios, these GNRs show very low mobility and low on-state conductance due to dominant scattering effects by imperfections and disorders at the edges. Wider GNRs (>5 nm) show higher mobility, higher conductance but smaller bandgaps and low on/off ratios undesirable for FET applications. It is highly desirable to open up bandgaps in graphene or increase the bandgaps in wide GNRs to afford graphene based semiconductors for high performance (high on-state current and high on/off ratio) electronics. Large scale ordering and dense packing of such GNRs in parallel are also needed for device integration but have also been challenging thus far. It has been shown theoretically that uniaxial strains can be applied to a GNR to engineer its bandgap. The underlying physics is that under uniaxial strain, the Dirac point moves due to stretched C-C bonds, leading to an increase in the bandgap of armchair GNRs by up to 50% of its original bandgap (i.e. bandgap at zero strain). For zigzag GNRs, due to the existence of the edge states, changes of bandgap are smaller under uniaxial strain and can be increased by ~30%. This work proposes a novel approach to the fabrication of densely aligned graphene nanoribbons with highly smooth edges afforded by anisotropic etching and uniaxial strain for bandgap engineering of GNRs towards high on/off ratio and high on-state current GNR devices. First, we will develop a novel approach for the fabrication of high density GNR arrays (pitch <50 nm, tunable down to 30nm) with pre-defined edge orientation and smooth edges using a free standing nano-mask derived from diblock copolymer assembly for patterning of graphene sheets. Anisotropic graphene edges will be developed to afford smooth edges along crystallographic lattice directions. Then, we will fabricate GNR devices on flexible substrates and apply uniaxial strain to engineer the bandgap of the GNRs. The bandgap of GNRs could be increased by up to 50% under uniaxial strain according to theoretical calculations and will be investigated through electrical transport measurements. Micro-Raman spectroscopy of single GNRs and parallel arrays will be used to probe and quantify the uniaxial strain. Electrical measurements will be used to probe the on/off ratio of GNR FET devices and confirm the bandgap tuning effects. Finally, we plan to use dense parallel arrays of GNRs to demonstrate strained GNR field effect transistors with high on/off ratios and high on-state current, and compare strained GNR FETs with carbon nanotube and Si based field effect transistor (FET) devices.« less

Conservation voltage regulation (CVR) applied to energy savings by voltage-adjusting equipment through AMI

NASA Astrophysics Data System (ADS)

Lan, B.-R.; Chang, C.-A.; Huang, P.-Y.; Kuo, C.-H.; Ye, Z.-J.; Shen, B.-C.; Chen, B.-K.

2017-11-01

Conservation voltage reduction (CVR) includes peak demand reduction, energy conservation, carbon emission reduction, and electricity bill reduction. This paper analyzes the energy-reduction of Siwei Feeders with applying CVR, which are situated in Penghu region and equipped with smart meters. Furthermore, the applicable voltage reduction range for the feeders will be explored. This study will also investigate how the CVR effect and energy conservation are improved with the voltage control devices integrated. The results of this study can serve as a reference for the Taiwan Power Company to promote and implement voltage reduction and energy conservation techniques. This study is expected to enhance the energy-reduction performance of the Penghu Low Carbon Island Project.

Low speed phaselock speed control system. [for brushless dc motor

NASA Technical Reports Server (NTRS)

Fulcher, R. W.; Sudey, J. (Inventor)

1975-01-01

A motor speed control system for an electronically commutated brushless dc motor is provided which includes a phaselock loop with bidirectional torque control for locking the frequency output of a high density encoder, responsive to actual speed conditions, to a reference frequency signal, corresponding to the desired speed. The system includes a phase comparator, which produces an output in accordance with the difference in phase between the reference and encoder frequency signals, and an integrator-digital-to-analog converter unit, which converts the comparator output into an analog error signal voltage. Compensation circuitry, including a biasing means, is provided to convert the analog error signal voltage to a bidirectional error signal voltage which is utilized by an absolute value amplifier, rotational decoder, power amplifier-commutators, and an arrangement of commutation circuitry.

Research on bandgaps in two-dimensional phononic crystal with two resonators.

PubMed

Gao, Nansha; Wu, Jiu Hui; Yu, Lie

2015-02-01

In this paper, the bandgap properties of a two-dimensional phononic crystal with the two resonators is studied and embedded in a homogenous matrix. The resonators are not connected with the matrix but linked with connectors directly. The dispersion relationship, transmission spectra, and displacement fields of the eigenmodes of this phononic crystal are studied with finite-element method. In contrast to the phononic crystals with one resonators and hollow structure, the proposed structures with two resonators can open bandgaps at lower frequencies. This is a very interesting and useful phenomenon. Results show that, the opening of the bandgaps is because of the local resonance and the scattering interaction between two resonators and matrix. An equivalent spring-pendulum model can be developed in order to evaluate the frequencies of the bandgap edge. The study in this paper is beneficial to the design of opening and tuning bandgaps in phononic crystals and isolators in low-frequency range. Copyright © 2014 Elsevier B.V. All rights reserved.

Electronically active defects in the Cu2ZnSn(Se,S)4 alloys as revealed by transient photocapacitance spectroscopy

NASA Astrophysics Data System (ADS)

Miller, D. Westley; Warren, Charles W.; Gunawan, Oki; Gokmen, Tayfun; Mitzi, David B.; Cohen, J. David

2012-10-01

Transient photocapacitance (TPC) spectra were obtained on a series of Cu2ZnSn(Se,S)4 absorber devices with varying Se:S ratios, providing bandgaps (Eg) between 1 eV and 1.5 eV. Efficiencies varied between 8.3% and 9.3% for devices with Eg ≤ 1.2 eV and were near 6.5% for devices with Eg ≥ 1.4 eV. The TPC spectra revealed a band-tail region with Urbach energies at or below 18 meV for the first group, but in the 25-30 meV range for the higher band-gap samples. A deeper defect band centered near 0.8 eV was also observed in most samples. We identified a correlation between the Urbach energies and the voltage deficit in these devices.

High frequency modulation circuits based on photoconductive wide bandgap switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sampayan, Stephen

Methods, systems, and devices for high voltage and/or high frequency modulation. In one aspect, an optoelectronic modulation system includes an array of two or more photoconductive switch units each including a wide bandgap photoconductive material coupled between a first electrode and a second electrode, a light source optically coupled to the WBGP material of each photoconductive switch unit via a light path, in which the light path splits into multiple light paths to optically interface with each WBGP material, such that a time delay of emitted light exists along each subsequent split light path, and in which the WBGP materialmore » conducts an electrical signal when a light signal is transmitted to the WBGP material, and an output to transmit the electrical signal conducted by each photoconductive switch unit. The time delay of the photons emitted through the light path is substantially equivalent to the time delay of the electrical signal.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kao, Kuo-Hsing; Meyer, Kristin De; Department of Electrical Engineering, KU Leuven, Leuven

Band-to-band tunneling parameters of strained indirect bandgap materials are not well-known, hampering the reliability of performance predictions of tunneling devices based on these materials. The nonlocal band-to-band tunneling model for compressively strained SiGe is calibrated based on a comparison of strained SiGe p-i-n tunneling diode measurements and doping-profile-based diode simulations. Dopant and Ge profiles of the diodes are determined by secondary ion mass spectrometry and capacitance-voltage measurements. Theoretical parameters of the band-to-band tunneling model are calculated based on strain-dependent properties such as bandgap, phonon energy, deformation-potential-based electron-phonon coupling, and hole effective masses of strained SiGe. The latter is determined withmore » a 6-band k·p model. The calibration indicates an underestimation of the theoretical electron-phonon coupling with nearly an order of magnitude. Prospects of compressively strained SiGe tunneling transistors are made by simulations with the calibrated model.« less

Anomalous photovoltaic effect in organic-inorganic hybrid perovskite solar cells.

PubMed

Yuan, Yongbo; Li, Tao; Wang, Qi; Xing, Jie; Gruverman, Alexei; Huang, Jinsong

2017-03-01

Organic-inorganic hybrid perovskites (OIHPs) have been demonstrated to be highly successful photovoltaic materials yielding very-high-efficiency solar cells. We report the room temperature observation of an anomalous photovoltaic (APV) effect in lateral structure OIHP devices manifested by the device's open-circuit voltage ( V OC ) that is much larger than the bandgap of OIHPs. The persistent V OC is proportional to the electrode spacing, resembling that of ferroelectric photovoltaic devices. However, the APV effect in OIHP devices is not caused by ferroelectricity. The APV effect can be explained by the formation of tunneling junctions randomly dispersed in the polycrystalline films, which allows the accumulation of photovoltage at a macroscopic level. The formation of internal tunneling junctions as a result of ion migration is visualized with Kelvin probe force microscopy scanning. This observation points out a new avenue for the formation of large and continuously tunable V OC without being limited by the materials' bandgap.

Anomalous photovoltaic effect in organic-inorganic hybrid perovskite solar cells

PubMed Central

Yuan, Yongbo; Li, Tao; Wang, Qi; Xing, Jie; Gruverman, Alexei; Huang, Jinsong

2017-01-01

Organic-inorganic hybrid perovskites (OIHPs) have been demonstrated to be highly successful photovoltaic materials yielding very-high-efficiency solar cells. We report the room temperature observation of an anomalous photovoltaic (APV) effect in lateral structure OIHP devices manifested by the device’s open-circuit voltage (VOC) that is much larger than the bandgap of OIHPs. The persistent VOC is proportional to the electrode spacing, resembling that of ferroelectric photovoltaic devices. However, the APV effect in OIHP devices is not caused by ferroelectricity. The APV effect can be explained by the formation of tunneling junctions randomly dispersed in the polycrystalline films, which allows the accumulation of photovoltage at a macroscopic level. The formation of internal tunneling junctions as a result of ion migration is visualized with Kelvin probe force microscopy scanning. This observation points out a new avenue for the formation of large and continuously tunable VOC without being limited by the materials’ bandgap. PMID:28345043

System and method of modulating electrical signals using photoconductive wide bandgap semiconductors as variable resistors

DOEpatents

Harris, John Richardson; Caporaso, George J; Sampayan, Stephen E

2013-10-22

A system and method for producing modulated electrical signals. The system uses a variable resistor having a photoconductive wide bandgap semiconductor material construction whose conduction response to changes in amplitude of incident radiation is substantially linear throughout a non-saturation region to enable operation in non-avalanche mode. The system also includes a modulated radiation source, such as a modulated laser, for producing amplitude-modulated radiation with which to direct upon the variable resistor and modulate its conduction response. A voltage source and an output port, are both operably connected to the variable resistor so that an electrical signal may be produced at the output port by way of the variable resistor, either generated by activation of the variable resistor or propagating through the variable resistor. In this manner, the electrical signal is modulated by the variable resistor so as to have a waveform substantially similar to the amplitude-modulated radiation.

Analysis of multifunctional piezoelectric metastructures for low-frequency bandgap formation and energy harvesting

NASA Astrophysics Data System (ADS)

Sugino, C.; Erturk, A.

2018-05-01

Vibration-based energy harvesting is a growing field for generating low-power electricity to use in wireless electronic devices, such as the sensor networks used in structural health monitoring applications. Locally resonant metastructures, which are structures that comprise locally resonant metamaterial components, enable bandgap formation at wavelengths much longer than the lattice size, for critical applications such as low-frequency vibration attenuation in flexible structures. This work aims to bridge the domains of energy harvesting and locally resonant metamaterials to form multifunctional structures that exhibit both low-power electricity generation and vibration attenuation capabilities. A fully coupled electromechanical modeling framework is developed for two characteristic systems and their modal analysis is presented. Simulations are performed to explore the vibration and electrical power frequency response maps for varying electrical load resistance, and optimal loading conditions are presented. Case studies are presented to understand the interaction of bandgap formation and energy harvesting capabilities of this new class of multifunctional energy-harvesting locally resonant metastructures. It is shown that useful energy can be harvested from locally resonant metastructures without significantly diminishing their dramatic vibration attenuation in the locally resonant bandgap. Thus, integrating energy harvesters into a locally resonant metastructure enables a new potential for multifunctional locally resonant metastructures that can host self-powered sensors.

Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions.

PubMed

Tang, Janika; Thakore, Vaibhav; Ala-Nissila, Tapio

2017-07-18

Increased reflectance from the inclusion of highly scattering particles at low volume fractions in an insulating dielectric offers a promising way to reduce radiative thermal losses at high temperatures. Here, we investigate plasmonic resonance driven enhanced scattering from microinclusions of low-bandgap semiconductors (InP, Si, Ge, PbS, InAs and Te) in an insulating composite to tailor its infrared reflectance for minimizing thermal losses from radiative transfer. To this end, we compute the spectral properties of the microcomposites using Monte Carlo modeling and compare them with results from Fresnel equations. The role of particle size-dependent Mie scattering and absorption efficiencies, and, scattering anisotropy are studied to identify the optimal microinclusion size and material parameters for maximizing the reflectance of the thermal radiation. For composites with Si and Ge microinclusions we obtain reflectance efficiencies of 57-65% for the incident blackbody radiation from sources at temperatures in the range 400-1600 °C. Furthermore, we observe a broadbanding of the reflectance spectra from the plasmonic resonances due to charge carriers generated from defect states within the semiconductor bandgap. Our results thus open up the possibility of developing efficient high-temperature thermal insulators through use of the low-bandgap semiconductor microinclusions in insulating dielectrics.

High voltage systems (tube-type microwave)/low voltage system (solid-state microwave) power distribution

NASA Technical Reports Server (NTRS)

Nussberger, A. A.; Woodcock, G. R.

1980-01-01

SPS satellite power distribution systems are described. The reference Satellite Power System (SPS) concept utilizes high-voltage klystrons to convert the onboard satellite power from dc to RF for transmission to the ground receiving station. The solar array generates this required high voltage and the power is delivered to the klystrons through a power distribution subsystem. An array switching of solar cell submodules is used to maintain bus voltage regulation. Individual klystron dc voltage conversion is performed by centralized converters. The on-board data processing system performs the necessary switching of submodules to maintain voltage regulation. Electrical power output from the solar panels is fed via switch gears into feeder buses and then into main distribution buses to the antenna. Power also is distributed to batteries so that critical functions can be provided through solar eclipses.

Achieving high performance polymer tandem solar cells via novel materials design

NASA Astrophysics Data System (ADS)

Dou, Letian

Organic photovoltaic (OPV) devices show great promise in low-cost, flexible, lightweight, and large-area energy-generation applications. Nonetheless, most of the materials designed today always suffer from the inherent disadvantage of not having a broad absorption range, and relatively low mobility, which limit the utilization of the full solar spectrum. Tandem solar cells provide an effective way to harvest a broader spectrum of solar radiation by combining two or more solar cells with different absorption bands. However, for polymer solar cells, the performance of tandem devices lags behind single-layer solar cells mainly due to the lack of suitable low-bandgap polymers (near-IR absorbing polymers). In this dissertation, in order to achieve high performance, we focus on design and synthesis of novel low bandgap polymers specifically for tandem solar cells. In Chapter 3, I demonstrate highly efficient single junction and tandem polymer solar cells featuring a spectrally matched low-bandgap conjugated polymer (PBDTT-DPP: bandgap, ˜1.44 eV). The polymer has a backbone based on alternating benzodithiophene and diketopyrrolopyrrole units. A single-layer device based on the polymer provides a power conversion efficiency of ˜6%. When the polymer is applied to tandem solar cells, a power conversion efficiency of 8.62% is achieved, which was the highest certified efficiency for a polymer solar cell. To further improve this material system, in Chapter 4, I show that the reduction of the bandgap and the enhancement of the charge transport properties of the low bandgap polymer PBDTT-DPP can be accomplished simultaneously by substituting the sulfur atoms on the DPP unit with selenium atoms. The newly designed polymer PBDTT-SeDPP (Eg = 1.38 eV) shows excellent photovoltaic performance in single junction devices with PCEs over 7% and photo-response up to 900 nm. Tandem polymer solar cells based on PBDTT-SeDPP are also demonstrated with a 9.5% PCE, which are more than 10% enhancement over those based on PBDTT-DPP. Finally, in Chapter 5, I demonstrate a new polymer system based on alternating dithienopyran and benzothiadiazole units with a bandgap of 1.38 eV, high mobility, deep highest occupied molecular orbital. As a result, a single-junction device shows high external quantum efficiency of >60% and spectral response that extends to 900 nm, with a power conversion efficiency of 7.9%. The polymer enables a solution processed tandem solar cell with certified 10.6% power conversion efficiency under standard reporting conditions, which is the first certified polymer solar cell efficiency over 10%.

Single-polarization hollow-core square photonic bandgap waveguide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eguchi, Masashi, E-mail: megu@ieee.org; Tsuji, Yasuhide, E-mail: y-tsuji@mmm.muroran-it.ac.jp

Materials with a periodic structure have photonic bandgaps (PBGs), in which light can not be guided within certain wavelength ranges; thus light can be confined within a low-index region by the bandgap effect. In this paper, rectangular-shaped hollow waveguides having waveguide-walls (claddings) using the PBG have been discussed. The design principle for HE modes of hollow-core rectangular PBG waveguides with a Bragg cladding consisting of alternating high- and low-index layers, based on a 1D periodic multilayer approximation for the Bragg cladding, is established and then a novel single-polarization hollow-core square PBG waveguide using the bandgap difference between two polarized wavesmore » is proposed. Our results demonstrated that a single-polarization guiding can be achieved by using the square Bragg cladding structure with different layer thickness ratios in the mutually orthogonal directions and the transmission loss of the guided mode in a designed hollow-core square PBG waveguide is numerically estimated to be 0.04 dB/cm.« less

Plasmon-Enhanced Sub-Bandgap Photocatalysis via Triplet-Triplet Annihilation Upconversion for Volatile Organic Compound Degradation.

PubMed

Kim, Hyoung-Il; Weon, Seunghyun; Kang, Homan; Hagstrom, Anna L; Kwon, Oh Seok; Lee, Yoon-Sik; Choi, Wonyong; Kim, Jae-Hong

2016-10-18

This study demonstrates the first reported photocatalytic decomposition of an indoor air pollutant, acetaldehyde, using low-energy, sub-bandgap photons harnessed through sensitized triplet-triplet annihilation (TTA) upconversion (UC). To utilize low-intensity noncoherent indoor light and maximize photocatalytic activity, we designed a plasmon-enhanced sub-bandgap photocatalyst device consisting of two main components: (1) TTA-UC rubbery polymer films containing broad-band plasmonic particles (Ag-SiO 2 ) to upconvert sub-bandgap photons, and (2) nanodiamond (ND)-loaded WO 3 as a visible-light photocatalyst composite. Effective decomposition of acetaldehyde was achieved using ND/WO 3 (E g = 2.8 eV) coupled with TTA-UC polymer films that emit blue photons (λ Em = 425 nm, 2.92 eV) upconverted from green photons (λ Ex = 532 nm, 2.33 eV), which are wasted in most environmental photocatalysis. The overall photocatalytic efficiency was amplified by the broad-band surface plasmon resonance of AgNP-SiO 2 particles incorporated into the TTA-UC films.

Characterization and modeling of cadmium chloride treated cadmium telluride/cadmium sulfide thin-film solar cells

NASA Astrophysics Data System (ADS)

Maxwell, Graham Lane

CdTe photovoltaic technology has the potential to become a leading energy producer in the coming decades. Its physical properties are well suited for photovoltaic energy conversion. A key processing step in the production of high efficiency CdTe/CdS solar cells is a post-CdTe deposition heat treatment with CdCl2, which can improve performance by promoting CdTe rectrystallization, QE response, defect passivation and others. Understanding the effects of the CdCl2 treatment is crucial in order to optimize processing conditions and improve performance. This study investigates the effects of variations of CdCl2 treatment duration on CdTe/CdS solar cells manufactured at Colorado State University. In order to investigate the optimal time of CdCl 2 treatment, sample solar cells were tested for microstructural and performance properties. Device microstructure was analyzed using X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Device performance was analyzed using current density-voltage (J-V) measurements, time-resolved photoluminescence (TRPL), quantum efficiency (QE), and laser beam induced current (LBIC) measurements. Little change in microstructure was observed with extended CdCl 2 treatment and is attributed to the high CdTe deposition temperatures used by heat pocket deposition (HPD). This deposition technique allows for large initial grains to be formed with low lattice strain energy which prevents recrystallization and grain growth that is often seen with other deposition techniques. The CdCl2 treatment initially improves performance significantly, but it was shown to that extending the CdCl2 treatment can reduce performance. Overall performance was reduced despite an increase in minority carrier lifetime values. The mechanism of reduced performance is suggested to be the formation of a low bandgap CdTe layer resulting from sulfur diffusion from the CdS layer. Sulfur diffusion primarily occurs during the CdCl 2 treatment and also leads to thinning of the CdS layer. Solar cell modeling was employed to investigate possible mechanisms for performance degradation. Modeling was done with AMPS and SCAPS modeling software. Models were created to investigate the effects of minority carrier lifetime, CdS thickness, and a low bandgap CdTe layer. Modeling results showed that the formation of a low bandgap CdTe layer combined with CdS thinning reduces device performance. Further research is needed using a statistically significant number of samples to investigate other possible degradation mechanisms associated with extended CdCl2 treatment.

Toward blue emission in ZnO based LED

NASA Astrophysics Data System (ADS)

Viana, Bruno; Pauporté, Thierry; Lupan, Oleg; Le Bahers, Tangui; Ciofini, Ilaria

2012-03-01

The bandgap engineering of ZnO nanowires by doping is of great importance for tunable light emitting diode (LED) applications. We present a combined experimental and computational study of ZnO doping with Cd or Cu atoms in the nanomaterial. Zn1-xTMxO (TM=Cu, Cd) nanowires have been epitaxially grown on magnesium-doped p-GaN by electrochemical deposition. The Zn1-xTMxO/p-GaN heterojunction was integrated in a LED structure. Nanowires act as the light emitters and waveguides. At room temperature, TM-doped ZnO based LEDs exhibit low-threshold emission voltage and electroluminescence emission shifted from ultraviolet to violet-blue spectral region compared to pure ZnO LEDs. The emission wavelength can be tuned by changing the transition metal (TM) content in the ZnO nanomaterial and the shift is discussed, including insights from DFT computational investigations.

Nanoionic devices: Interface nanoarchitechtonics for physical property tuning and enhancement

NASA Astrophysics Data System (ADS)

Tsuchiya, Takashi; Terabe, Kazuya; Yang, Rui; Aono, Masakazu

2016-11-01

Nanoionic devices have been developed to generate novel functions overcoming limitations of conventional materials synthesis and semiconductor technology. Various physical properties can be tuned and enhanced by local ion transport near the solid/solid interface. Two electronic carrier doping methods can be used to achieve extremely high-density electronic carriers: one is electrostatic carrier doping using an electric double layer (EDL); the other is electrochemical carrier doping using a redox reaction. Atomistic restructuring near the solid/solid interface driven by a DC voltage, namely, interface nanoarchitechtonics, has huge potential. For instance, the use of EDL enables high-density carrier doping in potential superconductors, which can hardly accept chemical doping, in order to achieve room-temperature superconductivity. Optical bandgap and photoluminescence can be controlled for various applications including smart windows and biosensors. In situ tuning of magnetic properties is promising for low-power-consumption spintronics. Synaptic plasticity in the human brain is achieved in neuromorphic devices.

State reference design and saturated control of doubly-fed induction generators under voltage dips

NASA Astrophysics Data System (ADS)

Tilli, Andrea; Conficoni, Christian; Hashemi, Ahmad

2017-04-01

In this paper, the stator/rotor currents control problem of doubly-fed induction generator under faulty line voltage is carried out. Common grid faults cause a steep decline in the line voltage profile, commonly denoted as voltage dip. This point is critical for such kind of machines, having their stator windings directly connected to the grid. In this respect, solid methodological nonlinear control theory arguments are exploited and applied to design a novel controller, whose main goal is to improve the system behaviour during voltage dips, endowing it with low voltage ride through capability, a fundamental feature required by modern Grid Codes. The proposed solution exploits both feedforward and feedback actions. The feedforward part relies on suitable reference trajectories for the system internal dynamics, which are designed to prevent large oscillations in the rotor currents and command voltages, excited by line perturbations. The feedback part uses state measurements and is designed according to Linear Matrix Inequalities (LMI) based saturated control techniques to further reduce oscillations, while explicitly accounting for the system constraints. Numerical simulations verify the benefits of the internal dynamics trajectory planning, and the saturated state feedback action, in crucially improving the Doubly-Fed Induction Machine response under severe grid faults.

Photonic mesophases from cut rod rotators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stelson, Angela C.; Liddell Watson, Chekesha M., E-mail: cml66@cornell.edu; Avendano, Carlos

2016-01-14

The photonic band properties of random rotator mesophases are calculated using supercell methods applied to cut rods on a hexagonal lattice. Inspired by the thermodynamic mesophase for anisotropic building blocks, we vary the shape factor of cut fraction for the randomly oriented basis. We find large, stable bandgaps with high gap isotropy in the inverted and direct structures as a function of cut fraction, dielectric contrast, and filling fraction. Bandgap sizes up to 34.5% are maximized at high dielectric contrast for rods separated in a matrix. The bandgaps open at dielectric contrasts as low as 2.0 for the transverse magneticmore » polarization and 2.25 for the transverse electric polarization. Additionally, the type of scattering that promotes the bandgap is correlated with the effect of disorder on bandgap size. Slow light properties are investigated in waveguide geometry and slowdown factors up to 5 × 10{sup 4} are found.« less

Multi-fidelity machine learning models for accurate bandgap predictions of solids

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pilania, Ghanshyam; Gubernatis, James E.; Lookman, Turab

Here, we present a multi-fidelity co-kriging statistical learning framework that combines variable-fidelity quantum mechanical calculations of bandgaps to generate a machine-learned model that enables low-cost accurate predictions of the bandgaps at the highest fidelity level. Additionally, the adopted Gaussian process regression formulation allows us to predict the underlying uncertainties as a measure of our confidence in the predictions. In using a set of 600 elpasolite compounds as an example dataset and using semi-local and hybrid exchange correlation functionals within density functional theory as two levels of fidelities, we demonstrate the excellent learning performance of the method against actual high fidelitymore » quantum mechanical calculations of the bandgaps. The presented statistical learning method is not restricted to bandgaps or electronic structure methods and extends the utility of high throughput property predictions in a significant way.« less

Multi-fidelity machine learning models for accurate bandgap predictions of solids

DOE PAGES

Pilania, Ghanshyam; Gubernatis, James E.; Lookman, Turab

2016-12-28

Here, we present a multi-fidelity co-kriging statistical learning framework that combines variable-fidelity quantum mechanical calculations of bandgaps to generate a machine-learned model that enables low-cost accurate predictions of the bandgaps at the highest fidelity level. Additionally, the adopted Gaussian process regression formulation allows us to predict the underlying uncertainties as a measure of our confidence in the predictions. In using a set of 600 elpasolite compounds as an example dataset and using semi-local and hybrid exchange correlation functionals within density functional theory as two levels of fidelities, we demonstrate the excellent learning performance of the method against actual high fidelitymore » quantum mechanical calculations of the bandgaps. The presented statistical learning method is not restricted to bandgaps or electronic structure methods and extends the utility of high throughput property predictions in a significant way.« less

High brightness InP micropillars grown on silicon with Fermi level splitting larger than 1 eV.

PubMed

Tran, Thai-Truong D; Sun, Hao; Ng, Kar Wei; Ren, Fan; Li, Kun; Lu, Fanglu; Yablonovitch, Eli; Chang-Hasnain, Constance J

2014-06-11

The growth of III-V nanowires on silicon is a promising approach for low-cost, large-scale III-V photovoltaics. However, performances of III-V nanowire solar cells have not yet been as good as their bulk counterparts, as nanostructured light absorbers are fundamentally challenged by enhanced minority carriers surface recombination rates. The resulting nonradiative losses lead to significant reductions in the external spontaneous emission quantum yield, which, in turn, manifest as penalties in the open-circuit voltage. In this work, calibrated photoluminescence measurements are utilized to construct equivalent voltage-current characteristics relating illumination intensities to Fermi level splitting ΔF inside InP microillars. Under 1 sun, we show that splitting can exceed ΔF ∼ 0.90 eV in undoped pillars. This value can be increased to values of ΔF ∼ 0.95 eV by cleaning pillar surfaces in acidic etchants. Pillars with nanotextured surfaces can yield splitting of ΔF ∼ 0.90 eV, even though they exhibit high densities of stacking faults. Finally, by introducing n-dopants, ΔF of 1.07 eV can be achieved due to a wider bandgap energy in n-doped wurzite InP, the higher brightness of doped materials, and the extraordinarily low surface recombination velocity of InP. This is the highest reported value for InP materials grown on a silicon substrate. These results provide further evidence that InP micropillars on silicon could be a promising material for low-cost, large-scale solar cells with high efficiency.

Optical voltage reference

DOEpatents

Rankin, Richard; Kotter, Dale

1994-01-01

An optical voltage reference for providing an alternative to a battery source. The optical reference apparatus provides a temperature stable, high precision, isolated voltage reference through the use of optical isolation techniques to eliminate current and impedance coupling errors. Pulse rate frequency modulation is employed to eliminate errors in the optical transmission link while phase-lock feedback is employed to stabilize the frequency to voltage transfer function.

Catalysts for Lightweight Solar Fuels Generation

DTIC Science & Technology

2017-03-10

single bandgap solar cells to OER catalysts could lead to very high solar -to-fuel efficiencies. Figure 3 illustrates a PV -EC utilizing a PV , an...3- or 4 -single junction c-Si solar cells connected in series. Considering a PV -EC device based on commercially available single junction-Si solar ...30.8%) with open circuit voltage and short circuit current density ; total plot area is scaled to incident solar power (100 mW cm–2). The PV -EC

High voltage photoconductive switch package

DOE Office of Scientific and Technical Information (OSTI.GOV)

Caporaso, George J.

2016-11-22

A photoconductive switch having a wide bandgap material substrate between opposing electrodes, and a doped dielectric filler that is in contact with both the electrodes and the substrate at the triple point. The dielectric filler material is doped with a conductive material to make it partially or completely conducting, to minimize the field enhancement near the triple point both when the substrate is not conducting in the "off" state and when the substrate is rendered conducting by radiation in the "on" state.

Bandgap opening in hydrogenated germanene

NASA Astrophysics Data System (ADS)

Yao, Q.; Zhang, L.; Kabanov, N. S.; Rudenko, A. N.; Arjmand, T.; Rahimpour Soleimani, H.; Klavsyuk, A. L.; Zandvliet, H. J. W.

2018-04-01

We have studied the hydrogenation of germanene synthesized on Ge2Pt crystals using scanning tunneling microscopy and spectroscopy. The germanene honeycomb lattice is buckled and consists of two hexagonal sub-lattices that are slightly displaced with respect to each other. The hydrogen atoms adsorb exclusively on the Ge atoms of the upward buckled hexagonal sub-lattice. At a hydrogen exposure of about 100 L, the (1 × 1) buckled honeycomb structure of germanene converts to a (2 × 2) structure. Scanning tunneling spectra recorded on this (2 × 2) structure reveal the opening of a bandgap of about 0.2 eV. A fully (half) hydrogenated germanene surface is obtained after an exposure of about 9000 L hydrogen. The hydrogenated germanene, also referred to as germanane, has a sizeable bandgap of about 0.5 eV and is slightly n-type.

Contributions of oxygen vacancies and titanium interstitials to band-gap states of reduced titania

NASA Astrophysics Data System (ADS)

Li, Jingfeng; Lazzari, Rémi; Chenot, Stéphane; Jupille, Jacques

2018-01-01

The spectroscopic fingerprints of the point defects of titanium dioxide remain highly controversial. Seemingly indisputable experiments lead to conflicting conclusions in which oxygen vacancies and titanium interstitials are alternately referred to as the primary origin of the Ti 3 d band-gap states. We report on experiments performed by electron energy loss spectroscopy whose key is the direct annealing of only the very surface of rutile TiO2(110 ) crystals and the simultaneous measurement of its temperature via the Bose-Einstein loss/gain ratio. By surface preparations involving reactions with oxygen and water vapor, in particular, under electron irradiation, vacancy- and interstitial-related band-gap states are singled out. Off-specular measurements reveal that both types of defects contribute to a unique charge distribution that peaks in subsurface layers with a common dispersive behavior.

Outdoor measurements of a photovoltaic system using diffractive spectrum-splitting and concentration

DOE PAGES

Mohammad, N.; Schulz, M.; Wang, P.; ...

2016-09-16

In a single-bandgap absorber, photons having energy less than the bandgap are not absorbed, while those having energy larger than the bandgap lose the excess energy via thermalization. We present outdoor measurements of a photovoltaic system that overcomes these losses via spectrum splitting and concentration using a planar diffractive optic. The system was comprised of the diffractive optic coupled with GaInP and CIGS solar cells. The optic provides a geometric concentration of 3X for each solar cell. It is easily fabricated by single-step grayscale lithography and it is ultra-thin with a maximum thickness of only 2.5μm. Electrical measurements under directmore » sunlight demonstrated an increase of ~25% in total output power compared to the reference case without spectrum splitting and concentration. Since different bandgaps are in the same plane, the proposed photovoltaic system successfully circumvents the lattice-matching and current-matching issues in conventional tandem multi-junction solar cells. As a result, this system is also tolerant to solar spectrum variation and fill-factor degradation of constitutive solar cells.« less

Outdoor measurements of a photovoltaic system using diffractive spectrum-splitting and concentration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohammad, N.; Schulz, M.; Wang, P.

In a single-bandgap absorber, photons having energy less than the bandgap are not absorbed, while those having energy larger than the bandgap lose the excess energy via thermalization. We present outdoor measurements of a photovoltaic system that overcomes these losses via spectrum splitting and concentration using a planar diffractive optic. The system was comprised of the diffractive optic coupled with GaInP and CIGS solar cells. The optic provides a geometric concentration of 3X for each solar cell. It is easily fabricated by single-step grayscale lithography and it is ultra-thin with a maximum thickness of only 2.5μm. Electrical measurements under directmore » sunlight demonstrated an increase of ~25% in total output power compared to the reference case without spectrum splitting and concentration. Since different bandgaps are in the same plane, the proposed photovoltaic system successfully circumvents the lattice-matching and current-matching issues in conventional tandem multi-junction solar cells. As a result, this system is also tolerant to solar spectrum variation and fill-factor degradation of constitutive solar cells.« less

Probing photoresponse of aligned single-walled carbon nanotube doped ultrathin MoS2.

PubMed

Wang, Rui; Wang, Tianjiao; Hong, Tu; Xu, Ya-Qiong

2018-08-24

We report a facile method to produce ultrathin molybdenum disulfide (MoS 2 ) hybrids with polarized near-infrared (NIR) photoresponses, in which horizontally-aligned single-walled carbon nanotubes (SWNTs) are integrated with single- and few-layer MoS 2 through a two-step chemical vapor deposition process. The photocurrent generation mechanisms in SWNT-MoS 2 hybrids are systematically investigated through wavelength- and polarization-dependent scanning photocurrent measurements. When the incident photon energy is above the direct bandgap of MoS 2 , isotropic photocurrent signals are observed, which can be primarily attributed to the direct bandgap transition in MoS 2 . In contrast, if the incident photon energy in the NIR region is below the direct bandgap of MoS 2 , the maximum photocurrent response occurs when the incident light is polarized in the direction along the SWNTs, indicating that photocurrent signals mainly result from the anisotropic absorption of SWNTs. More importantly, these two-dimensional (2D) hybrid structures inherit the electrical transport properties from MoS 2 , displaying n-type characteristics at a zero gate voltage. These fundamental studies provide a new way to produce ultrathin MoS 2 hybrids with inherited electrical properties and polarized NIR photoresponses, opening doors for engineering various 2D hybrid materials for future broadband optoelectronic applications.

A new CMOS SiGeC avalanche photo-diode pixel for IR sensing

NASA Astrophysics Data System (ADS)

Augusto, Carlos; Forester, Lynn; Diniz, Pedro C.

2009-05-01

Near-infra-red sensing with silicon is limited by the bandgap of silicon, corresponding to a maximum wavelength of absorption of 1.1 μm. A new type of CMOS sensor is presented, which uses a SiGeC epitaxial film in conjunction with novel device architecture to extend absorption into the infra-red. The SiGeC film composition and thickness determine the spectrum of absorption; in particular for SiGeC superlattices, the layer ordering to create pseudo direct bandgaps is the critical parameter. In this new device architecture, the p-type SiGeC film is grown on an active region surrounded by STI, linked to the S/D region of an adjacent NMOS, under the STI by a floating N-Well. On a n-type active, a P-I-N device is formed, and on a p-type active, a P-I-P device is formed, each sensing different regions of the spectrum. The SiGeC films can be biased for avalanche operation, as the required vertical electric field is confined to the region near the heterojunction interface, thereby not affecting the gate oxide of the adjacent NMOS. With suitable heterojunction and doping profiles, the avalanche region can also be bandgap engineered, allowing for avalanche breakdown voltages that are compatible with CMOS devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sayed, Islam E. H.; Jain, Nikhil; Steiner, Myles A.

Here, InGaAsP/InGaP quantum well (QW) structures are promising materials for next generation photovoltaic devices because of their tunable bandgap (1.50-1.80 eV) and being aluminum-free. However, the strain-balance limitations have previously limited light absorption in the QW region and constrained the external quantum efficiency (EQE) values beyond the In 0.49Ga 0.51P band-edge to less than 25%. In this work, we show that implementing a hundred period lattice matched InGaAsP/InGaP superlattice solar cell with more than 65% absorbing InGaAsP well resulted in more than 2x improvement in EQE values than previously reported strain balanced approaches. In addition, processing the devices with amore » rear optical reflector resulted in strong Fabry-Perot resonance oscillations and the EQE values were highly improved in the vicinity of these peaks, resulting in a short circuit current improvement of 10% relative to devices with a rear optical filter. These enhancements have resulted in an InGaAsP/InGaP superlattice solar cell with improved peak sub-bandgap EQE values exceeding 75% at 700 nm, an improvement in the short circuit current of 26% relative to standard InGaP devices, and an enhanced bandgap-voltage offset (W oc) of 0.4 V.« less

Optical voltage reference

DOEpatents

Rankin, R.; Kotter, D.

1994-04-26

An optical voltage reference for providing an alternative to a battery source is described. The optical reference apparatus provides a temperature stable, high precision, isolated voltage reference through the use of optical isolation techniques to eliminate current and impedance coupling errors. Pulse rate frequency modulation is employed to eliminate errors in the optical transmission link while phase-lock feedback is employed to stabilize the frequency to voltage transfer function. 2 figures.

Off-set stabilizer for comparator output

DOEpatents

Lunsford, James S.

1991-01-01

A stabilized off-set voltage is input as the reference voltage to a comparator. In application to a time-interval meter, the comparator output generates a timing interval which is independent of drift in the initial voltage across the timing capacitor. A precision resistor and operational amplifier charge a capacitor to a voltage which is precisely offset from the initial voltage. The capacitance of the reference capacitor is selected so that substantially no voltage drop is obtained in the reference voltage applied to the comparator during the interval to be measured.

Characterization and comprehension of corona partial discharge in air under power frequency to very low frequency voltage

NASA Astrophysics Data System (ADS)

Yuanxiang, ZHOU; Zhongliu, ZHOU; Ling, ZHANG; Yunxiao, ZHANG; Yajun, MO; Jiantao, SUN

2018-05-01

For the partial discharge test of electrical equipment with large capacitance, the use of low-frequency voltage instead of power frequency voltage can effectively reduce the capacity requirements of test power supply. However, the validity of PD test under low frequency voltage needs to be evaluated. In order to investigate the influence of voltage frequency on corona discharge in the air, the discharge test of the tip-plate electrode under the frequency from 50 to 0.1 Hz is carried out based on the impulse current method. The results show that some of the main features of corona under low frequency do not change. The magnitude of discharge in a positive half cycle is obviously larger than that in a negative cycle. The magnitude of discharge and interval in positive cycle are random, while that in negative cycle are regular. With the decrease of frequency, the inception voltage increases. The variation trend of maximum and average magnitude and repetition rate of the discharge in positive and negative half cycle with the variation of voltage frequency and magnitude is demonstrated, with discussion and interpretation from the aspects of space charge transportation, effective discharge time and transition of discharge modes. There is an obvious difference in the phase resolved pattern of partial discharge and characteristic parameters of discharge patterns between power and low frequency. The experimental results can be the reference for mode identification of partial discharge under low frequency tests. The trend of the measured parameters with the variation of frequency provides more information about the insulation defect than traditional measurements under a single frequency (usually 50 Hz). Also it helps to understand the mechanism of corona discharge with an explanation of the characteristics under different frequencies.

Boron Doped Nanocrystalline Film with Improved Work Function as a Buffer Layer in Thin Film Silicon Solar Cells.

PubMed

Park, Jinjoo; Shin, Chonghoon; Park, Hyeongsik; Jung, Junhee; Lee, Youn-Jung; Bong, Sungjae; Dao, Vinh Ai; Balaji, Nagarajan; Yi, Junsin

2015-03-01

We investigated thin film silicon solar cells with boron doped hydrogenated nanocrystalline silicon/ hydrogenated amorphous silicon oxide [p-type nc-Si:H/a-SiOx:H] layer. First, we researched the bandgap engineering of diborane (B2H6) doped wide bandgap hydrogenated nanocryslline silicon (p-type nc-Si:H) films, which have excellent electrical properties of high dark conductivity, and low activation energy. The films prepared with lower doping ratio and higher hydrogen dilution ratio had higher optical gap (Eg), with higher dark conductivity (σ(d)), and lower activation energy (Ea). We controlled Eg from 2.10 eV to 1.75 eV, with σ(d) from 1.1 S/cm to 7.59 x 10(-3) S/cm, and Ea from 0.040 eV to 0.128 eV. Next, we focused on the fabrication of thin film silicon solar cells. By inserting p-type nc-Si:H film into the thin film silicon solar cells, we achieved a remarkable increase in the built-in potential from 0.803 eV to 0.901 eV. By forming p-type nc-Si:H film between SnO2:F/ZnO:Al (30 nm) and p-type a-SiOx:H layer, the solar cell properties of open circuit voltage (Voc), short circuit current density (Jsc), and efficiency (η) were improved by 3.7%, 9.2%, and 9.8%, respectively.

Higher Molecular Weight Leads to Improved Photoresponsivity Charge Transport and Interfacial Ordering in a Narrow Bandgap Semiconducting Polymer

DOE Office of Scientific and Technical Information (OSTI.GOV)

M Tong; S Cho; J Rogers

2011-12-31

Increasing the molecular weight of the low-bandgap semiconducting copolymer, poly[(4,4-didoecyldithieno[3,2-b:2',3'-d]silole)-2,6-diyl-alt-(2,1,3-benzothiadiazole)-4,7-diyl], Si-PDTBT, from 9 kDa to 38 kDa improves both photoresponsivity and charge transport properties dramatically. The photocurrent measured under steady state conditions is 20 times larger in the higher molecular weight polymer (HM{sub n} Si-PDTBT). Different decays of polarization memory in transient photoinduced spectroscopy measurements are consistent with more mobile photoexcitations in HM{sub n} Si-PDTBT relative to the lower molecular weight counterpart (LM{sub n} Si-PDTBT). Analysis of the current-voltage characteristics of field effect transistors reveals an increase in the mobility by a factor of 700 for HM{sub n} Si-PDTBT. Nearmore » edge X-ray absorption fine structure (NEXAFS) spectroscopy and grazing incidence small angle X-ray scattering (GISAXS) measurements demonstrate that LM{sub n} Si-PDTBT forms a disordered morphology throughout the depth of the film, whereas HM{sub n} Si-PDTBT exhibits pronounced {pi}-{pi} stacking in an edge-on configuration near the substrate interface. Increased interchain overlap between polymers in the edge-on configuration in HM{sub n} Si-PDTBT results in the higher carrier mobility. The improved optical response, transport mobility, and interfacial ordering highlight the subtle role that the degree of polymerization plays on the optoelectronic properties of conjugated polymer based organic semiconductors.« less

Fine-Tuning the Energy Levels of a Nonfullerene Small-Molecule Acceptor to Achieve a High Short-Circuit Current and a Power Conversion Efficiency over 12% in Organic Solar Cells.

PubMed

Kan, Bin; Zhang, Jiangbin; Liu, Feng; Wan, Xiangjian; Li, Chenxi; Ke, Xin; Wang, Yunchuang; Feng, Huanran; Zhang, Yamin; Long, Guankui; Friend, Richard H; Bakulin, Artem A; Chen, Yongsheng

2018-01-01

Organic solar cell optimization requires careful balancing of current-voltage output of the materials system. Here, such optimization using ultrafast spectroscopy as a tool to optimize the material bandgap without altering ultrafast photophysics is reported. A new acceptor-donor-acceptor (A-D-A)-type small-molecule acceptor NCBDT is designed by modification of the D and A units of NFBDT. Compared to NFBDT, NCBDT exhibits upshifted highest occupied molecular orbital (HOMO) energy level mainly due to the additional octyl on the D unit and downshifted lowest unoccupied molecular orbital (LUMO) energy level due to the fluorination of A units. NCBDT has a low optical bandgap of 1.45 eV which extends the absorption range toward near-IR region, down to ≈860 nm. However, the 60 meV lowered LUMO level of NCBDT hardly changes the V oc level, and the elevation of the NCBDT HOMO does not have a substantial influence on the photophysics of the materials. Thus, for both NCBDT- and NFBDT-based systems, an unusually slow (≈400 ps) but ultimately efficient charge generation mediated by interfacial charge-pair states is observed, followed by effective charge extraction. As a result, the PBDB-T:NCBDT devices demonstrate an impressive power conversion efficiency over 12%-among the best for solution-processed organic solar cells. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optimization of the front contact to minimize short-circuit current losses in CdTe thin-film solar cells

NASA Astrophysics Data System (ADS)

Kephart, Jason Michael

With a growing population and rising standard of living, the world is in need of clean sources of energy at low cost in order to meet both economic and environmental needs. Solar energy is an abundant resource which is fundamentally adequate to meet all human energy needs. Photovoltaics are an attractive way to safely convert this energy to electricity with little to no noise, moving parts, water, or arable land. Currently, thin-film photovoltaic modules based on cadmium telluride are a low-cost solution with multiple GW/year commercial production, but have lower conversion efficiency than the dominant technology, crystalline silicon. Increasing the conversion efficiency of these panels through optimization of the electronic and optical structure of the cell can further lower the cost of these modules. The front contact of the CdTe thin-film solar cell is critical to device efficiency for three important reasons: it must transmit light to the CdTe absorber to be collected, it must form a reasonably passive interface and serve as a growth template for the CdTe, and it must allow electrons to be extracted from the CdTe. The current standard window layer material, cadmium sulfide, has a low bandgap of 2.4 eV which can block over 20% of available light from being converted to mobile charge carriers. Reducing the thickness of this layer or replacing it with a higher-bandgap material can provide a commensurate increase in device efficiency. When the CdS window is made thinner, a degradation in electronic quality of the device is observed with a reduction in open-circuit voltage and fill factor. One commonly used method to enable a thinner optimum CdS thickness is a high-resistance transparent (HRT) layer between the transparent conducting oxide electrode and window layer. The function of this layer has not been fully explained in the literature, and existing hypotheses center on the existence of pinholes in the window layer which are not consistent with observed results. In this work numerous HRT layers were examined beginning with an empirical optimization to create a SnO2-based HRT which allows significantly reduced CdS thickness while maintaining diode quality. The role of this layer was explored through measurement of band alignment parameters via photoemission. These results suggest a negative correlation of work function to device open-circuit voltage, which implies that non-ideal band alignment at the front interface of CdTe is in large part responsible for the loss of electronic quality. Several scenarios explored through 1-dimensional modeling in the SCAPS program corroborate this theory. A sputter-deposited (Mg,Zn)O layer was tested which allows for complete elimination of the CdS window layer with an increase in open-circuit voltage and near complete transmission of all above-bandgap light. An additional window layer material---sputtered, oxygenated CdS---was explored for its transparency. This material was found only to produce high efficiency devices with an effective buffer layer such as the optimized SnO2-base HRT. The dependence of chemical, optical, electrical, and device properties on oxygen content was explored, and the stability of these devices was determined to depend largely on the minimization of copper in the device. Both sputter-deposited alloy window layers appeared to have tunable electron affinity which was critical to optimizing band alignment and therefore device efficiency. Several scenarios explored through 1-dimensional modeling in the SCAPS program corroborate this theory. Both window layers allowed an AM1.5G efficiency increase from a baseline of approximately 13% to 16%.

Highly improved photo-induced bias stability of sandwiched triple layer structure in sol-gel processed fluorine-doped indium zinc oxide thin film transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Dongha; Park, Hyungjin; Bae, Byeong-Soo, E-mail: bsbae@kaist.ac.kr

In order to improve the reliability of TFT, an Al{sub 2}O{sub 3} insulating layer is inserted between active fluorine doped indium zinc oxide (IZO:F) thin films to form a sandwiched triple layer. All the thin films were fabricated via low-cost sol-gel process. Due to its large energy bandgap and high bonding energy with oxygen atoms, the Al{sub 2}O{sub 3} layer acts as a photo-induced positive charge blocking layer that effectively blocks the migration of both holes and V {sub o}{sup 2+} toward the interface between the gate insulator and the semiconductor. The inserted Al{sub 2}O{sub 3} triple layer exhibits amore » noticeably low turn on voltage shift of −0.7 V under NBIS as well as the good TFT performance with a mobility of 10.9 cm{sup 2}/V ⋅ s. We anticipate that this approach can be used to solve the stability issues such as NBIS, which is caused by inescapable oxygen vacancies.« less

Reference voltage calculation method based on zero-sequence component optimisation for a regional compensation DVR

NASA Astrophysics Data System (ADS)

Jian, Le; Cao, Wang; Jintao, Yang; Yinge, Wang

2018-04-01

This paper describes the design of a dynamic voltage restorer (DVR) that can simultaneously protect several sensitive loads from voltage sags in a region of an MV distribution network. A novel reference voltage calculation method based on zero-sequence voltage optimisation is proposed for this DVR to optimise cost-effectiveness in compensation of voltage sags with different characteristics in an ungrounded neutral system. Based on a detailed analysis of the characteristics of voltage sags caused by different types of faults and the effect of the wiring mode of the transformer on these characteristics, the optimisation target of the reference voltage calculation is presented with several constraints. The reference voltages under all types of voltage sags are calculated by optimising the zero-sequence component, which can reduce the degree of swell in the phase-to-ground voltage after compensation to the maximum extent and can improve the symmetry degree of the output voltages of the DVR, thereby effectively increasing the compensation ability. The validity and effectiveness of the proposed method are verified by simulation and experimental results.

Laser-controlled optical transconductance varistor system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Hoang T.; Stuart, Brent C.

2017-07-11

An optical transconductance varistor system having a modulated radiation source configured to provide modulated stimulus, a wavelength converter operably connected to the modulated radiation source to produce a modulated stimulus having a predetermined wavelength, and a wide bandgap semiconductor photoconductive material in contact between two electrodes. The photoconductive material is operably coupled, such as by a beam transport module, to receive the modulated stimulus having the predetermined wavelength to control a current flowing through the photoconductive material when a voltage potential is present across the electrodes.

Graphene FETs Based on High Resolution Nanoribbons for HF Low Power Applications

NASA Astrophysics Data System (ADS)

Mele, David; Mehdhbi, Sarah; Fadil, Dalal; Wei, Wei; Ouerghi, Abdelkarim; Lepilliet, Sylvie; Happy, Henri; Pallecchi, Emiliano

2018-03-01

In this paper we present high frequency field effect transistors based on graphene nanoribbons arrays (GNRFETs). The nanoribbons serve as a channel for the transistors and are fabricated with a process based on e-beam lithography and dry etching of high mobility hydrogen intercalated epitaxial graphene. The widths of the nanoribbons vary from 50 to 20 nm, less than half those measured in previous reports for GNRFETs. Hall measurements reveal that the devices are p-doped, with mobility on the order of 2300 cm2/Vs. From DC characteristics, we find that the maximum ratio IMAX/IMIN is 5 obtained at 50 nm ribbons width. The IV characteristics of the GNRFETs are slightly non-linear at high bias without a full saturation. Therefore, despite the aggressive scaling of the graphene nanoribbon width, a bandgap is still not observed in our measurements. The high frequency performances of our GNRFETs are already significant at low bias. At 300 mV drain source voltage, the highest intrinsic (extrinsic) cut-off frequency ft reaches 82 (18) GHz and the extrinsic maximum oscillation frequency fmax is 20 GHz, which is promising for low power applications.

Room-temperature ballistic transport in III-nitride heterostructures.

PubMed

Matioli, Elison; Palacios, Tomás

2015-02-11

Room-temperature (RT) ballistic transport of electrons is experimentally observed and theoretically investigated in III-nitrides. This has been largely investigated at low temperatures in low band gap III-V materials due to their high electron mobilities. However, their application to RT ballistic devices is limited by their low optical phonon energies, close to KT at 300 K. In addition, the short electron mean-free-path at RT requires nanoscale devices for which surface effects are a limitation in these materials. We explore the unique properties of wide band-gap III-nitride semiconductors to demonstrate RT ballistic devices. A theoretical model is proposed to corroborate experimentally their optical phonon energy of 92 meV, which is ∼4× larger than in other III-V semiconductors. This allows RT ballistic devices operating at larger voltages and currents. An additional model is described to determine experimentally a characteristic dimension for ballistic transport of 188 nm. Another remarkable property is their short carrier depletion at device sidewalls, down to 13 nm, which allows top-down nanofabrication of very narrow ballistic devices. These results open a wealth of new systems and basic transport studies possible at RT.

Shape optimization of solid-air porous phononic crystal slabs with widest full 3D bandgap for in-plane acoustic waves

NASA Astrophysics Data System (ADS)

D'Alessandro, Luca; Bahr, Bichoy; Daniel, Luca; Weinstein, Dana; Ardito, Raffaele

2017-09-01

The use of Phononic Crystals (PnCs) as smart materials in structures and microstructures is growing due to their tunable dynamical properties and to the wide range of possible applications. PnCs are periodic structures that exhibit elastic wave scattering for a certain band of frequencies (called bandgap), depending on the geometric and material properties of the fundamental unit cell of the crystal. PnCs slabs can be represented by plane-extruded structures composed of a single material with periodic perforations. Such a configuration is very interesting, especially in Micro Electro-Mechanical Systems industry, due to the easy fabrication procedure. A lot of topologies can be found in the literature for PnCs with square-symmetric unit cell that exhibit complete 2D bandgaps; however, due to the application demand, it is desirable to find the best topologies in order to guarantee full bandgaps referred to in-plane wave propagation in the complete 3D structure. In this work, by means of a novel and fast implementation of the Bidirectional Evolutionary Structural Optimization technique, shape optimization is conducted on the hole shape obtaining several topologies, also with non-square-symmetric unit cell, endowed with complete 3D full bandgaps for in-plane waves. Model order reduction technique is adopted to reduce the computational time in the wave dispersion analysis. The 3D features of the PnC unit cell endowed with the widest full bandgap are then completely analyzed, paying attention to engineering design issues.

Band Tailing and Deep Defect States in CH 3NH 3Pb(I 1–xBr x) 3 Perovskites As Revealed by Sub-Bandgap Photocurrent

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sutter-Fella, Carolin M.; Miller, D. Westley; Ngo, Quynh P.

Organometal halide perovskite semiconductors have emerged as promising candidates for optoelectronic applications because of the outstanding charge carrier transport properties, achieved with low-temperature synthesis. In this paper, we present highly sensitive sub-bandgap external quantum efficiency (EQE) measurements of Au/spiro-OMeTAD/CH 3NH 3Pb(I 1–xBr x) 3/TiO 2/FTO/glass photovoltaic devices. The room-temperature spectra show exponential band tails with a sharp onset characterized by low Urbach energies (E u) over the full halide composition space. The Urbach energies are 15–23 meV, lower than those for most semiconductors with similar bandgaps (especially with E g > 1.9 eV). Intentional aging of CH 3NH 3Pb(I 1–xBrmore » x) 3 for up to 2300 h, reveals no change in E u, despite the appearance of the PbI 2 phase due to decomposition, and confirms a high degree of crystal ordering. Moreover, sub-bandgap EQE measurements reveal an extended band of sub-bandgap electronic states that can be fit with one or two point defects for pure CH 3NH 3PbI 3 or mixed CH 3NH 3Pb(I 1–xBr x) 3 compositions, respectively. Finally, the study provides experimental evidence of defect states close to the midgap that could impact photocarrier recombination and energy conversion efficiency in higher bandgap CH 3NH 3Pb(I 1–xBr x) 3 alloys.« less

Band Tailing and Deep Defect States in CH 3NH 3Pb(I 1–xBr x) 3 Perovskites As Revealed by Sub-Bandgap Photocurrent

DOE PAGES

Sutter-Fella, Carolin M.; Miller, D. Westley; Ngo, Quynh P.; ...

2017-02-15

Organometal halide perovskite semiconductors have emerged as promising candidates for optoelectronic applications because of the outstanding charge carrier transport properties, achieved with low-temperature synthesis. In this paper, we present highly sensitive sub-bandgap external quantum efficiency (EQE) measurements of Au/spiro-OMeTAD/CH 3NH 3Pb(I 1–xBr x) 3/TiO 2/FTO/glass photovoltaic devices. The room-temperature spectra show exponential band tails with a sharp onset characterized by low Urbach energies (E u) over the full halide composition space. The Urbach energies are 15–23 meV, lower than those for most semiconductors with similar bandgaps (especially with E g > 1.9 eV). Intentional aging of CH 3NH 3Pb(I 1–xBrmore » x) 3 for up to 2300 h, reveals no change in E u, despite the appearance of the PbI 2 phase due to decomposition, and confirms a high degree of crystal ordering. Moreover, sub-bandgap EQE measurements reveal an extended band of sub-bandgap electronic states that can be fit with one or two point defects for pure CH 3NH 3PbI 3 or mixed CH 3NH 3Pb(I 1–xBr x) 3 compositions, respectively. Finally, the study provides experimental evidence of defect states close to the midgap that could impact photocarrier recombination and energy conversion efficiency in higher bandgap CH 3NH 3Pb(I 1–xBr x) 3 alloys.« less

First-principles study of SnS electronic properties using LDA, PBE and HSE06 functionals

NASA Astrophysics Data System (ADS)

Ibragimova, R.; Ganchenkova, M.; Karazhanov, S.; Marstein, E. S.

2018-03-01

Recently, tin sulphide (SnS) has emerged as a promising alternative to conventional CIGS and CZTC for use in solar cells, possessing such properties as non-toxicity, low cost and production stability. SnS has a high theoretically predicted efficiency above 20%, but the experimentally achieved efficiency so far is as low as 4.36%. The reason for the low achieved efficiency is unclear. One of the powerful tools to get deeper insights about the nature of the problem is first-principles calculation approaches. That is why SnS has become an attractive subject for first-principles calculations recently. Previously calculated data, however, show a widespread of such fundamental value as the bandgap varying from 0.26 to 1.26 eV. In order to understand a reason for that, in this work, we concentrate on a systematic study of calculation parameters effects on the resulting electronic structure, with the particular attention paid to the influence of the exchange-correlation functional chosen for calculations. Several exchange-correlation functionals (LDA, PBE and HSE06) were considered. The systematic analysis has shown that the bandgap variation can result from a tensile/compressive hydrostatic pressure introduced by non-equilibrium lattice parameters used for the calculations. The study of the applicability of three functionals has shown that HSE06 gives the best match to both experimentally obtained bandgap and the XPS valence band spectra. LDA underestimates the bandgap but qualitatively reproduces experimentally measured valence DOS similar to that of HSE06 in contrast to PBE. PBE underestimates the bandgap and does not match to the measured XPS spectra.

Feasibility of low-concentration iodinated contrast medium with lower-tube-voltage dual-source CT aortography using iterative reconstruction: comparison with automatic exposure control CT aortography.

PubMed

Shin, Hee Jeong; Kim, Song Soo; Lee, Jae-Hwan; Park, Jae-Hyeong; Jeong, Jin-Ok; Jin, Seon Ah; Shin, Byung Seok; Shin, Kyung-Sook; Ahn, Moonsang

2016-06-01

To evaluate the feasibility of low-concentration contrast medium (CM) for vascular enhancement, image quality, and radiation dose on computed tomography aortography (CTA) using a combined low-tube-voltage and iterative reconstruction (IR) technique. Ninety subjects underwent dual-source CT (DSCT) operating in dual-source, high-pitch mode. DSCT scans were performed using both high-concentration CM (Group A, n = 50; Iomeprol 400) and low-concentration CM (Group B, n = 40; Iodixanol 270). Group A was scanned using a reference tube potential of 120 kVp and 120 reference mAs under automatic exposure control with IR. Group B was scanned using low-tube-voltage (80 or 100 kVp if body mass index ≥25 kg/m(2)) at a fixed current of 150 mAs, along with IR. Images of the two groups were compared regarding attenuation, image noise, signal-to-noise ratio (SNR), contrast-to-noise ratio (CNR), iodine load, and radiation dose in various locations of the CTA. In comparison between Group A and Group B, the average mean attenuation (454.73 ± 86.66 vs. 515.96 ± 101.55 HU), SNR (25.28 ± 4.34 vs. 31.29 ± 4.58), and CNR (21.83 ± 4.20 vs. 27.55 ± 4.81) on CTA in Group B showed significantly greater values and significantly lower image noise values (18.76 ± 2.19 vs. 17.48 ± 3.34) than those in Group A (all Ps < 0.05). Homogeneous contrast enhancement from the ascending thoracic aorta to the infrarenal abdominal aorta was significantly superior in Group B (P < 0.05). Low-concentration CM and a low-tube-voltage combination technique using IR is a feasible method, showing sufficient contrast enhancement and image quality.

Synthesis and Photovoltaic Properties of a Copolymer based on thieno [2, 3-f] benzofuran and thienopyrroledione

NASA Astrophysics Data System (ADS)

Gao, Yueyue; Yang, Yulin; Zhang, Yong

2017-12-01

A novel donor-acceptor type conjugated polymer PTBFTPD based on two-dimensional (2D) conjugated alkylthienyl substituted thieno[2,3-f]benzofuran (TBF) and thienopyrroledione (TPD) unit, was synthesized and applied as donor material for bulk heterojunction solar cells. The novol polymer possesses a narrow bandgap of 1.83 eV, a deep HOMO energy level (-5.64 eV) and a closer π-π stacking. After conventional devices were fabricated using PTBFTPD as donor blending with PC70BM as acceptor, a power conversion efficiency (PCE) of 4.33% with a high open circuit voltage (Voc) of 1.09 V was obtained. The result indicates the promising potential of thieno [2, 3-f] benzofuran unit for high efficient polymer solar cells with a high voltage.

Comparative study of mobility extraction methods in p-type polycrystalline silicon thin film transistors

NASA Astrophysics Data System (ADS)

Liu, Kai; Liu, Yuan; Liu, Yu-Rong; En, Yun-Fei; Li, Bin

2017-07-01

Channel mobility in the p-type polycrystalline silicon thin film transistors (poly-Si TFTs) is extracted using Hoffman method, linear region transconductance method and multi-frequency C-V method. Due to the non-negligible errors when neglecting the dependence of gate-source voltage on the effective mobility, the extracted mobility results are overestimated using linear region transconductance method and Hoffman method, especially in the lower gate-source voltage region. By considering of the distribution of localized states in the band-gap, the frequency independent capacitance due to localized charges in the sub-gap states and due to channel free electron charges in the conduction band were extracted using multi-frequency C-V method. Therefore, channel mobility was extracted accurately based on the charge transport theory. In addition, the effect of electrical field dependent mobility degradation was also considered in the higher gate-source voltage region. In the end, the extracted mobility results in the poly-Si TFTs using these three methods are compared and analyzed.

Chapter 11.2: Inverters, Power Optimizers, and Microinverters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deline, Christopher A

Inverters span a wide range of sizes, topologies, and connection voltages: from utility-scale megawatt inverters to string inverters. Switch-mode power conversion relies on high frequency chopping of DC signal to periodically charge and discharge energy storage elements, such as inductors and capacitors. Additional circuit components are required to address practical issues in inverters such as voltage ripple and harmonic distortion. Inverters are beginning to incorporate components with a bandgap above should be 3 eV, such as SiC and GaN. Photovoltaic (PV) modules respond dynamically to changing temperature and irradiation conditions. Thus, maximum DC power extraction requires periodic adjustment of themore » PV voltage and current operating point. An inverter's total efficiency is measured by the product of its conversion efficiency and the maximum-power-point tracking (MPPT) efficiency. This chapter lists the primary functions of inverters that include auxiliary capabilities, such as monitoring of DC and AC performance, and other error reporting.« less

First-principles simulations of Graphene/Transition-metal-Dichalcogenides/Graphene Field-Effect Transistor

NASA Astrophysics Data System (ADS)

Li, Xiangguo; Wang, Yun-Peng; Zhang, X.-G.; Cheng, Hai-Ping

A prototype field-effect transistor (FET) with fascinating properties can be made by assembling graphene and two-dimensional insulating crystals into three-dimensional stacks with atomic layer precision. Transition metal dichalcogenides (TMDCs) such as WS2, MoS2 are good candidates for the atomically thin barrier between two layers of graphene in the vertical FET due to their sizable bandgaps. We investigate the electronic properties of the Graphene/TMDCs/Graphene sandwich structure using first-principles method. We find that the effective tunnel barrier height of the TMDC layers in contact with the graphene electrodes has a layer dependence and can be modulated by a gate voltage. Consequently a very high ON/OFF ratio can be achieved with appropriate number of TMDC layers and a suitable range of the gate voltage. The spin-orbit coupling in TMDC layers is also layer dependent but unaffected by the gate voltage. These properties can be important in future nanoelectronic device designs. DOE/BES-DE-FG02-02ER45995; NERSC.

Three-Dimensional Self-Assembled Photonic Crystal Waveguide

NASA Astrophysics Data System (ADS)

Baek, Kang-Hyun

Photonic crystals (PCs), two- or three-dimensionally periodic, artificial, and dielectric structures, have a specific forbidden band for electromagnetic waves, referred to as photonic bandgap (PBG). The PBG is analogous to the electronic bandgap in natural crystal structures with periodic atomic arrangement. A well-defined and embedded planar, line, or point defect within the PCs causes a break in its structural periodicity, and introduces a state in the PBG for light localization. It offers various applications in integrated optics and photonics including optical filters, sharp bending light guides and very low threshold lasers. Using nanofabrication processes, PCs of the 2-D slab-type and 3-D layer-by-layer structures have been investigated widely. Alternatively, simple and low-cost self-assembled PCs with full 3-D PBG, inverse opals, have been suggested. A template with face centered cubic closed packed structure, opal, may initially be built by self-assembly of colloidal spheres, and is selectively removed after infiltrating high refractive index materials into the interstitials of spheres. In this dissertation, the optical waveguides utilizing the 3-D self-assembled PCs are discussed. The waveguides were fabricated by microfabrication technology. For high-quality colloidal silica spheres and PCs, reliable synthesis, self-assembly, and characterization techniques were developed. Its theoretical and experimental demonstrations are provided and correlated. They suggest that the self-assembled PCs with PBG are feasible for the applications in integrated optics and photonics.

Polycrystalline-thin-film thermophotovoltaic cells

NASA Astrophysics Data System (ADS)

Dhere, Neelkanth G.

1996-02-01

Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity, portability, silent operation, absence of moving parts, reduced air pollution, rapid start-up, high power densities, potentially high conversion efficiencies, choice of a wide range of heat sources employing fossil fuels, biomass, and even solar radiation are key advantages of TPV cells in comparison with fuel cells, thermionic and thermoelectric convertors, and heat engines. The potential applications of TPV systems include: remote electricity supplies, transportation, co-generation, electric-grid independent appliances, and space, aerospace, and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000-2000 K) black-body or selective radiators is in the 0.5-0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1-xGaxAs, GaSb, and Ga1-xInxSb. Several polycrystalline thin films such as Hg1-xCdxTe, Sn1-xCd2xTe2, and Pb1-xCdxTe, etc., have great potential for economic large-scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells, e.g., 17.1% for CuIn1-xGaxSe2 and 15.8% for CdTe. The best recombination-state density Nt is in the range of 10-15-10-16 cm-3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences, possibility of bandgap tailoring, and use of selective emitters such as rare earth oxides (erbia, holmia, yttria) and rare earth-yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe, it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto-electronic (infrared detectors, lasers, and optical communications) technologies. Low bandgaps and larger fluences employed in TPV cells result in very high current densities which make it difficult to collect the current effectively. Techniques for laser and mechanical scribing, integral interconnection, and multi-junction tandem structures which have been fairly well developed for thin-film PV solar cells could be further refined for enhancing the voltages from TPV modules. Thin-film TPV cells may be deposited on metals or back-surface reflectors. Spectral control elements such as indium-tin oxide or tin oxide may be deposited directly on the TPV convertor. It would be possible to reduce the cost of TPV technologies based on single-crystal materials being developed at present to the range of US 2-5 per watt so as to be competitive in small to medium size commercial applications. However, a further cost reduction to the range of US ¢ 35- 1 per watt to reach the more competitive large-scale residential, consumer, and hybrid-electric car markets would be possible only with the polycrystalline-thin film TPV cells.

A low band-gap polymer based on unsubstituted benzo[1,2-b:4,5-b']dithiophene for high performance organic photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Woong Jung, Jae; Woong Jo, Jea; Liu, Feng

2012-01-01

A low band-gap conjugated polymer, PBDTDPP, composed of unsubstituted benzo[1,2-b:4,5-b']dithiophene and diketopyrrolo[3,4-c]pyrrole was synthesized. The deep HOMO level of PBDTDPP enhances the VOC of a PSC up to 0.82 V and exhibits a PCE of 5.16%, while alkoxy substituted PBDTDPP-OR yields a PCE of 2.24% with a VOC of 0.61 V.

One-pot synthesis of 4,8-dibromobenzo[1,2-c;4,5-c']bis[1,2,5]thiadiazole.

PubMed

Tam, Teck Lip; Li, Hairong; Wei, Fengxia; Tan, Ke Jie; Kloc, Christian; Lam, Yeng Ming; Mhaisalkar, Subodh G; Grimsdale, Andrew C

2010-08-06

A one-step synthesis of 4,8-dibromobenzo[1,2-c;4,5-c']bis[1,2,5]thiadiazole with use of 1,2,4,5-tetraaminobenzene tetrahydrobromide and thionyl bromide in good yield is reported. This unit can then be used in the synthesis of low bandgap materials via palladium-catalyzed coupling reactions. The approach offers a quick and easy way to prepare low bandgap materials as compared to the current literature methods.

Low Temperature Noise and Electrical Characterization of the Company Heterojunction Field-Effect Transistor

NASA Technical Reports Server (NTRS)

Cunningham, Thomas J.; Gee, Russell C.; Fossum, Eric R.; Baier, Steven M.

1993-01-01

This paper discusses the electrical properties of the complementary heterojunction field-effect transistor (CHFET) at 4K, including the gate leakage current, the subthreshold transconductance, and the input-referred noise voltage.

System and method for charging electrochemical cells in series

DOEpatents

DeLuca, William H.; Hornstra, Jr, Fred; Gelb, George H.; Berman, Baruch; Moede, Larry W.

1980-01-01

A battery charging system capable of equalizing the charge of each individual cell at a selected full charge voltage includes means for regulating charger current to first increase current at a constant rate until a bulk charging level is achieved or until any cell reaches a safe reference voltage. A system controller then begins to decrease the charging rate as long as any cell exceeds the reference voltage until an equalization current level is reached. At this point, the system controller activates a plurality of shunt modules to permit shunting of current around any cell having a voltage exceeding the reference voltage. Leads extending between the battery of cells and shunt modules are time shared to permit alternate shunting of current and voltage monitoring without the voltage drop caused by the shunt current. After each cell has at one time exceeded the reference voltage, the charging current is terminated.

Design concepts for hot carrier-based detectors and energy converters in the near ultraviolet and infrared

NASA Astrophysics Data System (ADS)

Gong, Tao; Krayer, Lisa; Munday, Jeremy N.

2016-10-01

Semiconductor materials are well suited for power conversion when the incident photon energy is slightly larger than the bandgap energy of the semiconductor. However, for photons with energy significantly greater than the bandgap energy, power conversion efficiencies are low. Further, for photons with energy below the bandgap energy, the absence of absorption results in no power generation. Here, we describe photon detection and power conversion of both high- and low-energy photons using hot carrier effects. For the absorption of high-energy photons, excited electrons and holes have excess kinetic energy that is typically lost through thermalization processes between the carriers and the lattice. However, collection of hot carriers before thermalization allows for reduced power loss. Devices utilizing plasmonic nanostructures or simple three-layer stacks (transparent conductor-insulator-metal) can be used to generate and collect these hot carriers. Alternatively, hot carrier collection from sub-bandgap photons can be possible by forming a Schottky junction with an absorbing metal so that hot carriers generated in the metal can be injected across the semiconductor-metal interface. Such structures enable near-IR detection based on sub-bandgap photon absorption. Further, utilization and optimization of localized surface plasmon resonances can increase optical absorption and hot carrier generation (through plasmon decay). Combining these concepts, hot carrier generation and collection can be exploited over a large range of incident wavelengths spanning the UV, visible, and IR.

A study of junction effect transistors and their roles in carbon nanotube field emission cathodes in compact pulsed power applications

NASA Astrophysics Data System (ADS)

Shui, Qiong

This thesis is focusing on a study of junction effect transistors (JFETs) in compact pulsed power applications. Pulsed power usually requires switches with high hold-off voltage, high current, low forward voltage drop, and fast switching speed. 4H-SiC, with a bandgap of 3.26 eV (The bandgap of Si is 1.12eV) and other physical and electrical superior properties, has gained much attention in high power, high temperature and high frequency applications. One topic of this thesis is to evaluate if 4H-SiC JFETs have a potential to replace gas phase switches to make pulsed power system compact and portable. Some other pulsed power applications require cathodes of providing stable, uniform, high electron-beam current. So the other topic of this research is to evaluate if Si JFET-controlled carbon nanotube field emitter cold cathode will provide the necessary e-beam source. In the topic of "4H-SiC JFETs", it focuses on the design and simulation of a novel 4H-SiC normally-off VJFET with high breakdown voltage using the 2-D simulator ATLAS. To ensure realistic simulations, we utilized reasonable physical models and the established parameters as the input into these models. The influence of key design parameters were investigated which would extend pulsed power limitations. After optimizing the key design parameters, with a 50-mum drift region, the predicted breakdown voltage for the VJFET is above 8kV at a leakage current of 1x10-5A/cm2 . The specific on-state resistance is 35 mO·cm 2 at VGS = 2.7 V, and the switching speed is several ns. The simulation results suggest that the 4H-SiC VJFET is a potential candidate for improving switching performance in repetitive pulsed power applications. To evaluate the 4H-SiC VJFETs in pulsed power circuits, we extracted some circuit model parameters from the simulated I-V curves. Those parameters are necessary for circuit simulation program such as SPICE. This method could be used as a test bench without fabricating the devices to minimize the unnecessary cost. As an extended research of 4H-SiC devices, Metal-Insulator-SiC (MIS) structures were utilized to evaluate the high dielectric constant materials---TiO 2 and Al2O3, as possible gate dielectrics for SiC devices. TiO2 and Al2O3 were chosen because of their high dielectric constants and bandgap energies as well as the acceptance of Ti and Al in most modern CMOS fabrication facilities. MIS devices were fabricated and both their I-V and C-V characteristics were measured and discussed. Our research showed that Al2O3 deposited by e-beam evaporation could be considered as a promising material among the gate insulators for high power SiC devices. In the topic of "Si JFET-controlled carbon nanotube field emitter cathode arrays", stability, controllability and lifetime are the main issues waiting to be addressed before field emitters find their wide applications. The ideas of connecting Si or metal field emitters with external MOSFETs or built-in active devices were attempted by other researchers, and those devices showed effectiveness in controlling and stabilizing the emission current. We presented the design, simulation, and the fabrication of Si JFETs monolithically integrated with CNTs field emitters. The Si JFET was designed to control and improve the emission of carbon nanotube field emitter arrays. Its electrical characteristics were simulated by the device simulator ATLAS. The fabrication process was developed to be compatible with the last step of growing multiwalled carbon nanotubes at 700°C. Carbon nanotubes field emitters were grown by PECVD (Plasma Enhanced Chemical Vapor Deposition). Preliminary field emission tests were conducted with 50 x 50 emitter arrays, with a resultant emission current of 3 muA (˜40 mA/cm2) at an extraction gate voltage of 50 V and an anode voltage of 300 V. Experimental data shows the linear relationship between ln(I/V2) and l/V consistent with Fowler-Nordheim electron tunneling. Some challenging issues were also discussed.

An inherent curvature-compensated voltage reference using non-linearity of gate coupling coefficient

NASA Astrophysics Data System (ADS)

Hande, Vinayak; Shojaei Baghini, Maryam

2015-08-01

A novel current-mode voltage reference circuit which is capable of generating sub-1 V output voltage is presented. The proposed architecture exhibits the inherent curvature compensation ability. The curvature compensation is achieved by utilizing the non-linear behavior of gate coupling coefficient to compensate non-linear temperature dependence of base-emitter voltage. We have also utilized the developments in CMOS process to reduce power and area consumption. The proposed voltage reference is analyzed theoretically and compared with other existing methods. The circuit is designed and simulated in 180 nm mixed-mode CMOS UMC technology which gives a reference level of 246 mV. The minimum required supply voltage is 1 V with maximum current drawn of 9.24 μA. A temperature coefficient of 9 ppm/°C is achieved over -25 to 125 °C temperature range. The reference voltage varies by ±11 mV across process corners. The reference circuit shows the line sensitivity of 0.9 mV/V with area consumption of 100 × 110 μm2

The Sheath-less Planar Langmuir Probe

NASA Astrophysics Data System (ADS)

Cooke, D. L.

2017-12-01

The Langmuir probe is one of the oldest plasma diagnostics, provided the plasma density and species temperature from analysis of a current-voltage curve as the voltage is swept over a practically chosen range. The analysis depends on a knowledge or theory of the many factors that influence the current-voltage curve including, probe shape, size, nearby perturbations, and the voltage reference. For applications in Low Earth Orbit, the Planar Langmuir Probe, PLP, is an attractive geometry because the ram ion current is very constant over many Volts of a sweep, allowing the ion density and electron temperature to be determined independently with the same instrument, at different points on the sweep. However, when the physical voltage reference is itself small and electrically floating as with a small spacecraft, the spacecraft and probe system become a double probe where the current collection theory depends on the interaction of the spacecraft with the plasma which is generally not as simple as the probe itself. The Sheath-less PLP, SPLP, interlaces on a single ram facing surface, two variably biased probe elements, broken into many small and intertwined segments on a scale smaller than the plasma Debye length. The SPLP is electrically isolated from the rest of the spacecraft. For relative bias potentials of a few volts, the ion current to all segments of each element will be constant, while the electron currents will vary as a function of the element potential and the electron temperature. Because the segments are small, intertwined, and floating, the assembly will always present the same floating potential to the plasma, with minimal growth as a function of voltage, thus sheath-less and still planar. This concept has been modelled with Nascap, and tested with a physical model inserted into a Low Earth Orbit-like chamber plasma. Results will be presented.

Solid state safety jumper cables

DOEpatents

Kronberg, James W.

1993-01-01

Solid state jumper cables for connecting two batteries in parallel, having two bridge rectifiers for developing a reference voltage, a four-input decoder for determining which terminals are to be connected based on a comparison of the voltage at each of the four terminals to the reference voltage, and a pair of relays for effecting the correct connection depending on the determination of the decoder. No connection will be made unless only one terminal of each battery has a higher voltage than the reference voltage, indicating "positive" terminals, and one has a lower voltage than the reference voltage, indicating "negative" terminals, and that, therefore, the two high voltage terminals may be connected and the two lower voltage terminals may be connected. Current flows once the appropriate relay device is closed. The relay device is preferably a MOSFET (metal oxide semiconductor field effect transistor) combined with a series array of photodiodes that develop MOSFET gate-closing potential when the decoder output causes an LED to light.

Solid state safety jumper cables

DOEpatents

Kronberg, J.W.

1993-02-23

Solid state jumper cables for connecting two batteries in parallel, having two bridge rectifiers for developing a reference voltage, a four-input decoder for determining which terminals are to be connected based on a comparison of the voltage at each of the four terminals to the reference voltage, and a pair of relays for effecting the correct connection depending on the determination of the decoder. No connection will be made unless only one terminal of each battery has a higher voltage than the reference voltage, indicating positive'' terminals, and one has a lower voltage than the reference voltage, indicating negative'' terminals, and that, therefore, the two high voltage terminals may be connected and the two lower voltage terminals may be connected. Current flows once the appropriate relay device is closed. The relay device is preferably a MOSFET (metal oxide semiconductor field effect transistor) combined with a series array of photodiodes that develop MOSFET gate-closing potential when the decoder output causes an LED to light.

High-Frequency Switching Transients and Power Loss Estimation in Electric Drive Systems that Utilize Wide-Bandgap Semiconductors

NASA Astrophysics Data System (ADS)

Fulani, Olatunji T.

Development of electric drive systems for transportation and industrial applications is rapidly seeing the use of wide-bandgap (WBG) based power semiconductor devices. These devices, such as SiC MOSFETs, enable high switching frequencies and are becoming the preferred choice in inverters because of their lower switching losses and higher allowable operating temperatures. Due to the much shorter turn-on and turn-off times and correspondingly larger output voltage edge rates, traditional models and methods previously used to estimate inverter and motor power losses, based upon a triangular power loss waveform, are no longer justifiable from a physical perspective. In this thesis, more appropriate models and a power loss calculation approach are described with the goal of more accurately estimating the power losses in WBG-based electric drive systems. Sine-triangle modulation with third harmonic injection is used to control the switching of the inverter. The motor and inverter models are implemented using Simulink and computer studies are shown illustrating the application of the new approach.

8.4% efficient fullerene-free organic solar cells exploiting long-range exciton energy transfer.

PubMed

Cnops, Kjell; Rand, Barry P; Cheyns, David; Verreet, Bregt; Empl, Max A; Heremans, Paul

2014-03-07

In order to increase the power conversion efficiency of organic solar cells, their absorption spectrum should be broadened while maintaining efficient exciton harvesting. This requires the use of multiple complementary absorbers, usually incorporated in tandem cells or in cascaded exciton-dissociating heterojunctions. Here we present a simple three-layer architecture comprising two non-fullerene acceptors and a donor, in which an energy-relay cascade enables an efficient two-step exciton dissociation process. Excitons generated in the remote wide-bandgap acceptor are transferred by long-range Förster energy transfer to the smaller-bandgap acceptor, and subsequently dissociate at the donor interface. The photocurrent originates from all three complementary absorbing materials, resulting in a quantum efficiency above 75% between 400 and 720 nm. With an open-circuit voltage close to 1 V, this leads to a remarkable power conversion efficiency of 8.4%. These results confirm that multilayer cascade structures are a promising alternative to conventional donor-fullerene organic solar cells.

Direct solar-to-hydrogen conversion via inverted metamorphic multi-junction semiconductor architectures

DOE PAGES

Young, James L.; Steiner, Myles A.; Döscher, Henning; ...

2017-03-13

Solar water splitting via multi-junction semiconductor photoelectrochemical cells provides direct conversion of solar energy to stored chemical energy as hydrogen bonds. Economical hydrogen production demands high conversion efficiency to reduce balance-of-systems costs. For sufficient photovoltage, water-splitting efficiency is proportional to the device photocurrent, which can be tuned by judicious selection and integration of optimal semiconductor bandgaps. Here, we demonstrate highly efficient, immersed water-splitting electrodes enabled by inverted metamorphic epitaxy and a transparent graded buffer that allows the bandgap of each junction to be independently varied. Voltage losses at the electrolyte interface are reduced by 0.55 V over traditional, uniformly p-dopedmore » photocathodes by using a buried p-n junction. Lastly, advanced on-sun benchmarking, spectrally corrected and validated with incident photon-to-current efficiency, yields over 16% solar-to-hydrogen efficiency with GaInP/GaInAs tandem absorbers, representing a 60% improvement over the classical, high-efficiency tandem III-V device.« less

Direct solar-to-hydrogen conversion via inverted metamorphic multi-junction semiconductor architectures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Young, James L.; Steiner, Myles A.; Döscher, Henning

Solar water splitting via multi-junction semiconductor photoelectrochemical cells provides direct conversion of solar energy to stored chemical energy as hydrogen bonds. Economical hydrogen production demands high conversion efficiency to reduce balance-of-systems costs. For sufficient photovoltage, water-splitting efficiency is proportional to the device photocurrent, which can be tuned by judicious selection and integration of optimal semiconductor bandgaps. Here, we demonstrate highly efficient, immersed water-splitting electrodes enabled by inverted metamorphic epitaxy and a transparent graded buffer that allows the bandgap of each junction to be independently varied. Voltage losses at the electrolyte interface are reduced by 0.55 V over traditional, uniformly p-dopedmore » photocathodes by using a buried p-n junction. Lastly, advanced on-sun benchmarking, spectrally corrected and validated with incident photon-to-current efficiency, yields over 16% solar-to-hydrogen efficiency with GaInP/GaInAs tandem absorbers, representing a 60% improvement over the classical, high-efficiency tandem III-V device.« less

Exploration of Metal Chloride Uptake for Improved Performance Characteristics of PbSe Quantum Dot Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marshall, Ashley R.; Young, Matthew R.; Nozik, Arthur J.

2015-08-06

We explored the uptake of metal chloride salts with +1 to +3 metals of Na+, K+, Zn2+, Cd2+, Sn2+, Cu2+, and In3+ by PbSe QD solar cells. We also compared CdCl2 to Cd acetate and Cd nitrate treatments. PbSe QD solar cells fabricated with a CdCl2 treatment are stable for more than 270 days stored in air. We studied how temperature and immersion times affect optoelectronic properties and photovoltaic cell performance. Uptake of Cd2+ and Zn2+ increase open circuit voltage, whereas In3+ and K+ increase the photocurrent without influencing the spectral response or first exciton peak position. Using the mostmore » beneficial treatments we varied the bandgap of PbSe QD solar cells from 0.78 to 1.3 eV and find the improved VOC is more prevalent for lower bandgap QD solar cells.« less

Low-noise AlInAsSb avalanche photodiode

NASA Astrophysics Data System (ADS)

Woodson, Madison E.; Ren, Min; Maddox, Scott J.; Chen, Yaojia; Bank, Scott R.; Campbell, Joe C.

2016-02-01

We report low-noise avalanche gain from photodiodes composed of a previously uncharacterized alloy, Al0.7In0.3As0.3Sb0.7, grown on GaSb. The bandgap energy and thus the cutoff wavelength are similar to silicon; however, since the bandgap of Al0.7In0.3As0.3Sb0.7 is direct, its absorption depth is 5 to 10 times shorter than indirect-bandgap silicon, potentially enabling significantly higher operating bandwidths. In addition, unlike other III-V avalanche photodiodes that operate in the visible or near infrared, the excess noise factor is comparable to or below that of silicon, with a k-value of approximately 0.015. Furthermore, the wide array of absorber regions compatible with GaSb substrates enable cutoff wavelengths ranging from 1 μm to 12 μm.

Inverted Three-Junction Tandem Thermophotovoltaic Modules

NASA Technical Reports Server (NTRS)

Wojtczuk, Steven

2012-01-01

An InGaAs-based three-junction (3J) tandem thermophotovoltaic (TPV) cell has been investigated to utilize more of the blackbody spectrum (from a 1,100 C general purpose heat source GPHS) efficiently. The tandem consists of three vertically stacked subcells, a 0.74-eV InGaAs cell, a 0.6- eV InGaAs cell, and a 0.55-eV InGaAs cell, as well as two interconnecting tunnel junctions. A greater than 20% TPV system efficiency was achieved by another group with a 1,040 C blackbody using a single-bandgap 0.6- eV InGaAs cell MIM (monolithic interconnected module) (30 lateral junctions) that delivered about 12 V/30 or 0.4 V/junction. It is expected that a three-bandgap tandem MIM will eventually have about 3 this voltage (1.15 V) and about half the current. A 4 A/cm2 would be generated by a single-bandgap 0.6-V InGaAs MIM, as opposed to the 2 A/cm2 available from the same spectrum when split among the three series-connected junctions in the tandem stack. This would then be about a 50% increase (3xVoc, 0.5xIsc) in output power if the proposed tandem replaced the single- bandgap MIM. The advantage of the innovation, if successful, would be a 50% increase in power conversion efficiency from radioisotope heat sources using existing thermophotovoltaics. Up to 50% more power would be generated for radioisotope GPHS deep space missions. This type of InGaAs multijunction stack could be used with terrestrial concentrator solar cells to increase efficiency from 41 to 45% or more.

High-Performance Polymer Solar Cells Based on a Wide-Bandgap Polymer Containing Pyrrolo[3,4-f]benzotriazole-5,7-dione with a Power Conversion Efficiency of 8.63.

PubMed

Lan, Liuyuan; Chen, Zhiming; Hu, Qin; Ying, Lei; Zhu, Rui; Liu, Feng; Russell, Thomas P; Huang, Fei; Cao, Yong

2016-09-01

A novel donor-acceptor type conjugated polymer based on a building block of 4,8-di(thien-2-yl) - 6-octyl-2-octyl-5 H- pyrrolo[3,4- f ]benzotriazole-5,7(6 H )-dione (TZBI) as the acceptor unit and 4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)-benzo-[1,2- b :4,5- b' ]dithiophene as the donor unit, named as PTZBIBDT, is developed and used as an electron-donating material in bulk-heterojunction polymer solar cells. The resulting copolymer exhibits a wide bandgap of 1.81 eV along with relatively deep highest occupied molecular orbital energy level of -5.34 eV. Based on the optimized processing conditions, including thermal annealing, and the use of a water/alcohol cathode interlayer, the single-junction polymer solar cell based on PTZBIBDT:PC 71 BM ([6,6]-phenyl-C 71 -butyric acid methyl ester) blend film affords a power conversion efficiency of 8.63% with an open-circuit voltage of 0.87 V, a short circuit current of 13.50 mA cm -2 , and a fill factor of 73.95%, which is among the highest values reported for wide-bandgap polymers-based single-junction organic solar cells. The morphology studies on the PTZBIBDT:PC 71 BM blend film indicate that a fibrillar network can be formed and the extent of phase separation can be mani-pulated by thermal annealing. These results indicate that the TZBI unit is a very promising building block for the synthesis of wide-bandgap polymers for high-performance single-junction and tandem (or multijunction) organic solar cells.

Structural correlations in the generation of polaron pairs in low-bandgap polymers for photovoltaics

NASA Astrophysics Data System (ADS)

Tautz, Raphael; da Como, Enrico; Limmer, Thomas; Feldmann, Jochen; Egelhaaf, Hans-Joachim; von Hauff, Elizabeth; Lemaur, Vincent; Beljonne, David; Yilmaz, Seyfullah; Dumsch, Ines; Allard, Sybille; Scherf, Ullrich

2012-07-01

Polymeric semiconductors are materials where unique optical and electronic properties often originate from a tailored chemical structure. This allows for synthesizing conjugated macromolecules with ad hoc functionalities for organic electronics. In photovoltaics, donor-acceptor co-polymers, with moieties of different electron affinity alternating on the chain, have attracted considerable interest. The low bandgap offers optimal light-harvesting characteristics and has inspired work towards record power conversion efficiencies. Here we show for the first time how the chemical structure of donor and acceptor moieties controls the photogeneration of polaron pairs. We show that co-polymers with strong acceptors show large yields of polaron pair formation up to 24% of the initial photoexcitations as compared with a homopolymer (η=8%). π-conjugated spacers, separating the donor and acceptor centre of masses, have the beneficial role of increasing the recombination time. The results provide useful input into the understanding of polaron pair photogeneration in low-bandgap co-polymers for photovoltaics.

Efficient low bandgap polymer solar cell with ordered heterojunction defined by nanoimprint lithography.

PubMed

Yang, Yi; Mielczarek, Kamil; Zakhidov, Anvar; Hu, Walter

2014-11-12

In this work, we demonstrate the feasibility of using nanoimprint lithography (NIL) to make efficient low bandgap polymer solar cells with well-ordered heterojunction. High quality low bandgap conjugated polymer poly[2,6-(4,4-bis(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b']-dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)] (PCPDTBT) nanogratings are fabricated using this technique for the first time. The geometry effect of PCPDTBT nanostructures on the solar cell performance is investigated by making PCPDTBT/C70 solar cells with different feature sizes of PCPDTBT nanogratings. It is found that the power conversion efficiency (PCE) increases with increasing nanograting height, PCPDTBT/C70 junction area, and decreasing nanograting width. We also find that NIL makes PCPDTBT chains interact more strongly and form an improved structural ordering. Solar cells made on the highest aspect ratio PCPDTBT nanostructures are among the best reported devices using the same material with a PCE of 5.5%.

Surface- and interface-engineered heterostructures for solar hydrogen generation

NASA Astrophysics Data System (ADS)

Chen, Xiangyan; Li, Yanrui; Shen, Shaohua

2018-04-01

Photoelectrochemical (PEC) water splitting based on semiconductor photoelectrodes provides a promising platform for reducing environmental pollution and solving the energy crisis by developing clean, sustainable and environmentally friendly hydrogen energy. In this context, metal oxides with their advantages including low cost, good chemical stability and environmental friendliness, have attracted extensive attention among the investigated candidates. However, the large bandgap, poor charge transfer ability and high charge recombination rate limit the PEC performance of metal oxides as photoelectrodes. To solve this limitation, many approaches toward enhanced PEC water splitting performance, which focus on surface and interface engineering, have been presented. In this topical review, we concentrate on the heterostructure design of some typical metal oxides with narrow bandgaps (e.g. Fe2O3, WO3, BiVO4 and Cu2O) as photoelectrodes. An overview of the surface- and interface-engineered heterostructures, including semiconductor heterojunctions, surface protection, surface passivation and cocatalyst decoration, will be given to introduce the recent advances in metal oxide heterostructures for PEC water splitting. This article aims to provide fundamental references and principles for designing metal oxide heterostructures with high activity and stability as photoelectrodes for PEC solar hydrogen generation.

Al0 0.3Ga 0.7N PN diode with breakdown voltage >1600 V

DOE PAGES

Allerman, A. A.; Armstrong, A. M.; Fischer, A. J.; ...

2016-07-21

Demonstration of Al0 0.3Ga 0.7N PN diodes grown with breakdown voltages in excess of 1600 V is reported. The total epilayer thickness is 9.1 μm and was grown by metal-organic vapour-phase epitaxy on 1.3-mm-thick sapphire in order to achieve crack-free structures. A junction termination edge structure was employed to control the lateral electric fields. A current density of 3.5 kA/cm 2 was achieved under DC forward bias and a reverse leakage current <3 nA was measured for voltages <1200 V. The differential on-resistance of 16 mΩ cm 2 is limited by the lateral conductivity of the n-type contact layer requiredmore » by the front-surface contact geometry of the device. An effective critical electric field of 5.9 MV/cm was determined from the epilayer properties and the reverse current–voltage characteristics. To our knowledge, this is the first aluminium gallium nitride (AlGaN)-based PN diode exhibiting a breakdown voltage in excess of 1 kV. Finally, we note that a Baliga figure of merit (V br 2/R spec,on) of 150 MW/cm 2 found is the highest reported for an AlGaN PN diode and illustrates the potential of larger-bandgap AlGaN alloys for high-voltage devices.« less

A low power, low noise Programmable Analog Front End (PAFE) for biopotential measurements.

PubMed

Adimulam, Mahesh Kumar; Divya, A; Tejaswi, K; Srinivas, M B

2017-07-01

A low power Programmable Analog Front End (PAFE) for biopotential measurements is presented in this paper. The PAFE circuit processes electrocardiogram (ECG), electromyography (EMG) and electroencephalogram (EEG) signals with higher accuracy. It consists mainly of improved transconductance programmable gain instrumentational amplifier (PGIA), programmable high pass filter (PHPF), and second order low pass filter (SLPF). A 15-bit programmable 5-stage successive approximation analog-to-digital converter (SAR-ADC) is implemented for improving the performance, whose power consumption is reduced due to multiple stages and by OTA/Comparator sharing technique between the stages. The power consumption is further reduced by operating the analog portion of PAFE on 0.5V supply voltage and digital portion on 0.3V supply voltage generated internally through a voltage regulator. The proposed low power PAFE has been fabricated in 180nm standard CMOS process. The performance parameters of PAFE in 15-bit mode are found to be, gain of 31-70 dB, input referred noise of 1.15 μVrms, CMRR of 110 dB, PSRR of 104 dB, and signal-to-noise distortion ratio (SNDR) of 83.5dB. The power consumption of the design is 1.1 μW @ 0.5 V supply voltage and it occupies a core silicon area of 1.2 mm 2 .

A Novel Bat-Shaped Dicyanomethylene-4H-pyran-Functionalized Naphthalimide for Highly Efficient Solution-Processed Multilevel Memory Devices.

PubMed

Zhang, Qi-Jian; Miao, Shi-Feng; Li, Hua; He, Jing-Hui; Li, Na-Jun; Xu, Qing-Feng; Chen, Dong-Yun; Lu, Jian-Mei

2017-06-19

Small-molecule-based multilevel memory devices have attracted increasing attention because of their advantages, such as super-high storage density, fast reading speed, light weight, low energy consumption, and shock resistance. However, the fabrication of small-molecule-based devices always requires expensive vacuum-deposition techniques or high temperatures for spin-coating. Herein, through rational tailoring of a previous molecule, DPCNCANA (4,4'-(6,6'-bis(2-octyl-1,3-dioxo-2,3-dihydro-1H-benzo[de]isoquinolin-6-yl)-9H,9'H-[3,3'-bicarbazole]-9,9'-diyl)dibenzonitrile), a novel bat-shaped A-D-A-type (A-D-A=acceptor-donor-acceptor) symmetric framework has been successfully synthesized and can be dissolved in common solvents at room temperature. Additionally, it has a low-energy bandgap and dense intramolecular stacking in the film state. The solution-processed memory devices exhibited high-performance nonvolatile multilevel data-storage properties with low switching threshold voltages of about -1.3 and -2.7 V, which is beneficial for low power consumption. Our result should prompt the study of highly efficient solution-processed multilevel memory devices in the field of organic electronics. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

InGaP Heterojunction Barrier Solar Cells

NASA Technical Reports Server (NTRS)

Welser, Roger E.

2010-01-01

A new solar-cell structure utilizes a single, ultra-wide well of either gallium arsenide (GaAs) or indium-gallium-phosphide (InGaP) in the depletion region of a wide bandgap matrix, instead of the usual multiple quantum well layers. These InGaP barrier layers are effective at reducing diode dark current, and photogenerated carrier escape is maximized by the proper design of the electric field and barrier profile. With the new material, open-circuit voltage enhancements of 40 and 100 mV (versus PIN control systems) are possible without any degradation in short-circuit current. Basic tenets of quantum-well and quantum- dot solar cells are utilized, but instead of using multiple thin layers, a single wide well works better. InGaP is used as a barrier material, which increases open current, while simultaneously lowering dark current, reducing both hole diffusion from the base, and space charge recombination within the depletion region. Both the built-in field and the barrier profile are tailored to enhance thermionic emissions, which maximizes the photocurrent at forward bias, with a demonstrated voltage increase. An InGaP heterojunction barrier solar cell consists of a single, ultra-wide GaAs, aluminum-gallium-arsenide (AlGaAs), or lower-energy-gap InGaP absorber well placed within the depletion region of an otherwise wide bandgap PIN diode. Photogenerated electron collection is unencumbered in this structure. InGaAs wells can be added to the thick GaAs absorber layer to capture lower-energy photons.

Atmospheric plasma generation for LCD panel cleaning

NASA Astrophysics Data System (ADS)

Kim, Gyu-Sik; Won, Chung-Yuen; Choi, Ju-Yeop; Yim, C. H.

2007-12-01

UV lamp systems have been used for cleaning of display panels of TFT LCD or Plasma Display Panel (PDP). However, the needs for high efficient cleaning and low cost made high voltage plasma cleaning techniques to be developed and to be improved. Dielectric-barrier discharges (DBDs), also referred to as barrier discharges or silent discharges have for a long time been exclusively related to ozone generation. In this paper, a 6kW high voltage plasma power supply system was developed for LCD cleaning. The -phase input voltage is rectified and then inverter system is used to make a high frequency pulse train, which is rectified after passing through a high-power transformer. Finally, bi-directional high voltage pulse switching circuits are used to generate the high voltage plasma. Some experimental results showed the usefulness of atmospheric plasma for LCD panel cleaning.

Low-sensitivity, low-bounce, high-linearity current-controlled oscillator suitable for single-supply mixed-mode instrumentation system.

PubMed

Hwang, Yuh-Shyan; Kung, Che-Min; Lin, Ho-Cheng; Chen, Jiann-Jong

2009-02-01

A low-sensitivity, low-bounce, high-linearity current-controlled oscillator (CCO) suitable for a single-supply mixed-mode instrumentation system is designed and proposed in this paper. The designed CCO can be operated at low voltage (2 V). The power bounce and ground bounce generated by this CCO is less than 7 mVpp when the power-line parasitic inductance is increased to 100 nH to demonstrate the effect of power bounce and ground bounce. The power supply noise caused by the proposed CCO is less than 0.35% in reference to the 2 V supply voltage. The average conversion ratio KCCO is equal to 123.5 GHz/A. The linearity of conversion ratio is high and its tolerance is within +/-1.2%. The sensitivity of the proposed CCO is nearly independent of the power supply voltage, which is less than a conventional current-starved oscillator. The performance of the proposed CCO has been compared with the current-starved oscillator. It is shown that the proposed CCO is suitable for single-supply mixed-mode instrumentation systems.

Amide-Catalyzed Phase-Selective Crystallization Reduces Defect Density in Wide-Bandgap Perovskites.

PubMed

Kim, Junghwan; Saidaminov, Makhsud I; Tan, Hairen; Zhao, Yicheng; Kim, Younghoon; Choi, Jongmin; Jo, Jea Woong; Fan, James; Quintero-Bermudez, Rafael; Yang, Zhenyu; Quan, Li Na; Wei, Mingyang; Voznyy, Oleksandr; Sargent, Edward H

2018-03-01

Wide-bandgap (WBG) formamidinium-cesium (FA-Cs) lead iodide-bromide mixed perovskites are promising materials for front cells well-matched with crystalline silicon to form tandem solar cells. They offer avenues to augment the performance of widely deployed commercial solar cells. However, phase instability, high open-circuit voltage (V oc ) deficit, and large hysteresis limit this otherwise promising technology. Here, by controlling the crystallization of FA-Cs WBG perovskite with the aid of a formamide cosolvent, light-induced phase segregation and hysteresis in perovskite solar cells are suppressed. The highly polar solvent additive formamide induces direct formation of the black perovskite phase, bypassing the yellow phases, thereby reducing the density of defects in films. As a result, the optimized WBG perovskite solar cells (PSCs) (E g ≈ 1.75 eV) exhibit a high V oc of 1.23 V, reduced hysteresis, and a power conversion efficiency (PCE) of 17.8%. A PCE of 15.2% on 1.1 cm 2 solar cells, the highest among the reported efficiencies for large-area PSCs having this bandgap is also demonstrated. These perovskites show excellent phase stability and thermal stability, as well as long-term air stability. They maintain ≈95% of their initial PCE after 1300 h of storage in dry air without encapsulation. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

[Basic concepts of radiology physics].

PubMed

Gambini, D-J

2010-11-01

An x-ray tube mainly emits low-energy X-rays, with few maximum energy E₀ (equal in keV to the voltage U in kV) x-rays. Aluminium filtration (mandatory minimum thickness of 1.5 to 2.5 mm based on tube voltage) reduces soft X-rays and provides a mean energy equal to 2/3 E₀. The half value layer of a reference material characterizes the spectrum. X-ray attenuation in tissues is due to secondary electron interactions: photoelectric effect at low-energy, especially in dense materials with high Z number; compton effect at intermediate-energy, proportional to density. The optimization of acquisition parameters of a medically necessary examination is based on appropriate selection of the highest voltage (U in kV) providing the best contrast and lowest tube current (Q in mAs) providing a diagnostic image.

Device physics of hydrogenated amorphous silicon solar cells

NASA Astrophysics Data System (ADS)

Liang, Jianjun

This dissertation reports measurements on and modeling of hydrogenated amorphous silicon (a-Si:H) nip solar cells. Cells with thicknesses from 200-900 nm were prepared at United Solar Ovonic LLC. The current density-voltage (J-V) relations were measured under laser illumination (685 nm wavelength, up to 200 mW/cm2) over the temperature range 240 K--350 K. The changes in the cells' open-circuit voltage during extended laser illumination (light-soaking) were measured, as were the cell properties in several light-soaked states. The J-V properties of cells in their as-deposited and light-soaked states converge at low-temperatures. Electromodulation spectra for the cells were also measured over the range 240 K--350 K to determine the temperature-dependent bandgap. These experimental results were compared to computer calculations of J-V relations using the AMPS ((c)Pennsylvania State University) computer code. Bandtail parameters (for electron and hole mobility and recombination) were consistent with published drift-mobility and transient photocurrent measurements on a-Si:H. The open-circuit voltage and power density measurements on as-deposited cells, as a function of temperature and thickness, were predicted well. The calculations support a general "hole mobility limited" approach to analyzing a-Si:H solar cells, and indicate that the doped electrode layers, the as-deposited density of dangling bonds, and the electron mobility are of secondary importance to as-deposited cells. For light-soaked a-Si:H solar cells, incorporation of a density of dangling bonds in the computer calculations accounted satisfactorily for the power and open-circuit voltage measurements, including the low-temperature convergence effect. The calculations indicate that, in the light-soaked state at room-temperature, electron recombination is split nearly evenly between holes trapped in the valence bandtail and holes trapped on dangling bonds. The result supports Stutzmann, Jackson, and Tsai's 1985 conjecture that dangling bond creation results only from bandtail recombination events. We compared the predictions of the hydrogen-collision model proposed by Branz with the kinetics of the open-circuit voltage as light-soaking progressed. We obtained satisfactory agreement for the initial phases of light-soaking with the conjecture that only bandtail recombination leads to dangling bond creation, and the computer calculations for this recombination channel's diminishment in the cell as the dangling bond density grows.

Non-Fullerene Polymer Solar Cells Based on Alkylthio and Fluorine Substituted 2D-Conjugated Polymers Reach 9.5% Efficiency.

PubMed

Bin, Haijun; Zhang, Zhi-Guo; Gao, Liang; Chen, Shanshan; Zhong, Lian; Xue, Lingwei; Yang, Changduk; Li, Yongfang

2016-04-06

Non-fullerene polymer solar cells (PSCs) with solution-processable n-type organic semiconductor (n-OS) as acceptor have seen rapid progress recently owing to the synthesis of new low bandgap n-OS, such as ITIC. To further increase power conversion efficiency (PCE) of the devices, it is of a great challenge to develop suitable polymer donor material that matches well with the low bandgap n-OS acceptors thus providing complementary absorption and nanoscaled blend morphology, as well as suppressed recombination and minimized energy loss. To address this challenge, we synthesized three medium bandgap 2D-conjugated bithienyl-benzodithiophene-alt-fluorobenzotriazole copolymers J52, J60, and J61 for the application as donor in the PSCs with low bandgap n-OS ITIC as acceptor. The three polymers were designed with branched alkyl (J52), branched alkylthio (J60), and linear alkylthio (J61) substituent on the thiophene conjugated side chain of the benzodithiophene (BDT) units for studying effect of the substituents on the photovoltaic performance of the polymers. The alkylthio side chain, red-shifted absorption down-shifted the highest occupied molecular orbital (HOMO) level and improved crystallinity of the 2D conjugated polymers. With linear alkylthio side chain, the tailored polymer J61 exhibits an enhanced JSC of 17.43 mA/cm(2), a high VOC of 0.89 V, and a PCE of 9.53% in the best non-fullerene PSCs with the polymer as donor and ITIC as acceptor. To the best of our knowledge, the PCE of 9.53% is one of the highest values reported in literature to date for the non-fullerene PSCs. The results indicate that J61 is a promising medium bandgap polymer donor in non-fullerene PSCs.

Open-Source Low-Cost Wireless Potentiometric Instrument for pH Determination Experiments

ERIC Educational Resources Information Center

Jin, Hao; Qin, Yiheng; Pan, Si; Alam, Arif U.; Dong, Shurong; Ghosh, Raja; Deen, M. Jamal

2018-01-01

pH determination is an essential experiment in many chemistry laboratories. It requires a potentiometric instrument with extremely low input bias current to accurately measure the voltage between a pH sensing electrode and a reference electrode. In this technology report, we propose an open-source potentiometric instrument for pH determination…

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shepard, Kenneth L.; Sturcken, Noah Andrew

Power controller includes an output terminal having an output voltage, at least one clock generator to generate a plurality of clock signals and a plurality of hardware phases. Each hardware phase is coupled to the at least one clock generator and the output terminal and includes a comparator. Each hardware phase is configured to receive a corresponding one of the plurality of clock signals and a reference voltage, combine the corresponding clock signal and the reference voltage to produce a reference input, generate a feedback voltage based on the output voltage, compare the reference input and the feedback voltage usingmore » the comparator and provide a comparator output to the output terminal, whereby the comparator output determines a duty cycle of the power controller. An integrated circuit including the power controller is also provided.« less

A polymer tandem solar cell with 10.6% power conversion efficiency.

PubMed

You, Jingbi; Dou, Letian; Yoshimura, Ken; Kato, Takehito; Ohya, Kenichiro; Moriarty, Tom; Emery, Keith; Chen, Chun-Chao; Gao, Jing; Li, Gang; Yang, Yang

2013-01-01

An effective way to improve polymer solar cell efficiency is to use a tandem structure, as a broader part of the spectrum of solar radiation is used and the thermalization loss of photon energy is minimized. In the past, the lack of high-performance low-bandgap polymers was the major limiting factor for achieving high-performance tandem solar cell. Here we report the development of a high-performance low bandgap polymer (bandgap <1.4 eV), poly[2,7-(5,5-bis-(3,7-dimethyloctyl)-5H-dithieno[3,2-b:2',3'-d]pyran)-alt-4,7-(5,6-difluoro-2,1,3-benzothia diazole)] with a bandgap of 1.38 eV, high mobility, deep highest occupied molecular orbital. As a result, a single-junction device shows high external quantum efficiency of >60% and spectral response that extends to 900 nm, with a power conversion efficiency of 7.9%. The polymer enables a solution processed tandem solar cell with certified 10.6% power conversion efficiency under standard reporting conditions (25 °C, 1,000 Wm(-2), IEC 60904-3 global), which is the first certified polymer solar cell efficiency over 10%.

A polymer tandem solar cell with 10.6% power conversion efficiency

PubMed Central

You, Jingbi; Dou, Letian; Yoshimura, Ken; Kato, Takehito; Ohya, Kenichiro; Moriarty, Tom; Emery, Keith; Chen, Chun-Chao; Gao, Jing; Li, Gang; Yang, Yang

2013-01-01

An effective way to improve polymer solar cell efficiency is to use a tandem structure, as a broader part of the spectrum of solar radiation is used and the thermalization loss of photon energy is minimized. In the past, the lack of high-performance low-bandgap polymers was the major limiting factor for achieving high-performance tandem solar cell. Here we report the development of a high-performance low bandgap polymer (bandgap <1.4 eV), poly[2,7-(5,5-bis-(3,7-dimethyloctyl)-5H-dithieno[3,2-b:2′,3′-d]pyran)-alt-4,7-(5,6-difluoro-2,1,3-benzothia diazole)] with a bandgap of 1.38 eV, high mobility, deep highest occupied molecular orbital. As a result, a single-junction device shows high external quantum efficiency of >60% and spectral response that extends to 900 nm, with a power conversion efficiency of 7.9%. The polymer enables a solution processed tandem solar cell with certified 10.6% power conversion efficiency under standard reporting conditions (25 °C, 1,000 Wm−2, IEC 60904-3 global), which is the first certified polymer solar cell efficiency over 10%. PMID:23385590

Low-noise pulse conditioner

DOEpatents

Bird, David A.

1983-01-01

A low-noise pulse conditioner is provided for driving electronic digital processing circuitry directly from differentially induced input pulses. The circuit uses a unique differential-to-peak detector circuit to generate a dynamic reference signal proportional to the input peak voltage. The input pulses are compared with the reference signal in an input network which operates in full differential mode with only a passive input filter. This reduces the introduction of circuit-induced noise, or jitter, generated in ground referenced input elements normally used in pulse conditioning circuits, especially speed transducer processing circuits.

Tunable bandgaps in a deployable metamaterial

NASA Astrophysics Data System (ADS)

Nanda, Aditya; Karami, M. Amin

2018-03-01

In this manuscript, we envision deployable structures (such as solar arrays) and origami-inspired foldable structures as metamaterials capable of tunable wave manipulation. Specifically, we present a metamaterial whose bandgaps can be modulated by changing the fold angle of adjacent panels. The repeating unit cell of the structure consists of a beam (representing a panel) and a torsional spring (representing the folding mechanism). Two important cases are considered. Firstly, the fold angle (angle between adjacent beams), Ψ, is zero and only flexural waves propagate. In the second case, the fold angle is greater than zero (Ψ > 0). This causes longitudinal and transverse vibration to be coupled. FEM models are used to validate both these analyses. Increasing the fold angle was found to inflict profound changes to the wave transmission characteristics of the structure. In general, increasing the fold angles caused the bandwidth of bandgaps to increase significantly. For the lowest four bandgaps we found bandwidth increases of 252 %, 177 %, 230 % and 163 % respectively at Ψ = 90 deg (relative to the bandwidths at Ψ = 0). In addition, significant increase in bandwidth of the odd-numbered bandgaps occurs even at small fold angles- the bandwidth for the first and third bandgaps effectively double in size (increase by 100%) at Ψ = 20 deg relative to those at Ψ = 0. This has important ramifications in the context of tunable wave manipulation and adaptive filtering. In addition, by expanding out the characteristic equation of transfer matrix for the straight structure, we prove that the upper band edge of the nth bandgap will always equal the nth simply supported natural frequency of the constituent beam. Further, we found that the ratio (EI/kt) is an important parameter affecting the bandwidth of bandgaps. For low values of the ratio, effectively, no bandgap exists. For higher values of the ratio (EI/kt), we obtain a relatively large bandgap over which no waves propagate. This can have important ramifications for the design of foldable structures. As an alternative to impedance-based structural health monitoring, these insights can aid in health monitoring of deployable structures by tracking the bandwidth of bandgaps which can provide important clues about the mechanical parameters of the structure.

Tunable bandgaps in a deployable metamaterial

NASA Astrophysics Data System (ADS)

Nanda, Aditya; Karami, M. A.

2018-06-01

In this manuscript, we investigate deployable structures (such as solar arrays) and origami-inspired foldable structures as metamaterials capable of tunable wave manipulation. Specifically, we present a metamaterial whose bandgaps can be modulated by changing the fold angle of adjacent panels. The repeating unit cell of the structure consists of a beam (representing a panel) and a torsional spring (representing the folding mechanism). Two important cases are considered. Firstly, the fold angle (angle between adjacent beams), Ψ, is zero and only flexural waves propagate. In the second case, the fold angle is greater than zero (Ψ > 0). This causes longitudinal and transverse vibration to be coupled. FEM models are used to validate both these analyses. Increasing the fold angle was found to inflict notable changes to the wave transmission characteristics of the structure. In general, increasing the fold angles caused the bandwidth of bandgaps to increase. For the lowest four bandgaps we found bandwidth increases of 252 %, 177 %, 230 % and 163 % respectively at Ψ = 90 deg (relative to the bandwidths at Ψ = 0). In addition, non-trivial increases in bandwidth of the odd-numbered bandgaps occurs even at small fold angles-the bandwidth for the first and third bandgaps effectively double in size (increase by 100 %) at Ψ = 20 deg relative to those at Ψ = 0. This could have ramifications in the context of tunable wave manipulation and adaptive filtering. In addition, by expanding out the characteristic equation of transfer matrix for the straight structure, we prove that the upper band edge of the nth bandgap will always equal the nth simply supported natural frequency of the constituent beam. Further, we found that the ratio (EI/kt) is a pertinent parameter affecting the bandwidth of bandgaps. For low values of the ratio, effectively, no bandgap exists. For higher values of the ratio (EI/kt), we obtain a relatively large bandgap over which no waves propagate. This can have ramifications for the design of foldable structures. As an alternative to impedance-based structural health monitoring, these insights can aid in health monitoring of deployable structures by tracking the bandwidth of bandgaps which can provide clues about the mechanical parameters of the structure.

Mechanical low-frequency filter via modes separation in 3D periodic structures

NASA Astrophysics Data System (ADS)

D'Alessandro, L.; Belloni, E.; Ardito, R.; Braghin, F.; Corigliano, A.

2017-12-01

This work presents a strategy to design three-dimensional elastic periodic structures endowed with complete bandgaps, the first of which is ultra-wide, where the top limits of the first two bandgaps are overstepped in terms of wave transmission in the finite structure. Thus, subsequent bandgaps are merged, approaching the behaviour of a three-dimensional low-pass mechanical filter. This result relies on a proper organization of the modal characteristics, and it is validated by performing numerical and analytical calculations over the unit cell. A prototype of the analysed layout, made of Nylon by means of additive manufacturing, is experimentally tested to assess the transmission spectrum of the finite structure, obtaining good agreement with numerical predictions. The presented strategy paves the way for the development of a class of periodic structures to be used in robust and reliable wave attenuation over a wide frequency band.

Development of high-performance GaInAsP solar cells for tandem solar cell applications

NASA Technical Reports Server (NTRS)

Wanlass, M. W.; Ward, J. S.; Gessert, T. A.; Emery, K. A.; Horner, G. S.

1990-01-01

Recent results in the development of high-efficiency, low-bandgap GaInAsP solar cells epitaxially grown and lattice matched on InP substrates are presented. Such cells are intended to be used as optimum bottom cell components in tandem solar cells. Assuming that a GaAs-based top cell is used, computer simulation of the potential bottom cell performance as a function of the cell bandgap and incident spectrum indicates that two particular alloys are desirable: Ga0.47In0.53As (Eg = 0.75 eV) for space applications and Ga0.25In0.75As0.54P0.46 (Eg = 0.95 eV) for terrestrial applications. In each of these materials, solar cells with new record-level efficiencies have been fabricated. The efficiency boost available to tandem configurations from these low-bandgap cells is discussed.

Sub-bandgap Voltage Electroluminescence and Magneto-oscillations in a WSe2 Light-Emitting van der Waals Heterostructure.

PubMed

Binder, Johannes; Withers, Freddie; Molas, Maciej R; Faugeras, Clement; Nogajewski, Karol; Watanabe, Kenji; Taniguchi, Takashi; Kozikov, Aleksey; Geim, Andre K; Novoselov, Kostya S; Potemski, Marek

2017-03-08

We report on experimental investigations of an electrically driven WSe 2 based light-emitting van der Waals heterostructure. We observe a threshold voltage for electroluminescence significantly lower than the corresponding single particle band gap of monolayer WSe 2 . This observation can be interpreted by considering the Coulomb interaction and a tunneling process involving excitons, well beyond the picture of independent charge carriers. An applied magnetic field reveals pronounced magneto-oscillations in the electroluminescence of the free exciton emission intensity with a 1/B periodicity. This effect is ascribed to a modulation of the tunneling probability resulting from the Landau quantization in the graphene electrodes. A sharp feature in the differential conductance indicates that the Fermi level is pinned and allows for an estimation of the acceptor binding energy.

Modeling, Fabrication, and Analysis of Vertical Conduction Gallium Nitride Fin MOSFET

NASA Astrophysics Data System (ADS)

Tahhan, Maher Bishara

Gallium Nitride has seen much interest in the field of electronics due to its large bandgap and high mobility. In the field of power electronics, this combination leads to a low on-resistance for a given breakdown voltage. To take full advantage of this, vertical conduction transistors in GaN can give high breakdown voltages independent of chip area, leading to transistors with nominally low on resistance with high breakdown at a low cost. Acknowledging this, a vertical transistor design is presented with a small footprint area. This design utilizes a fin structure as a double gated insulated MESFET with electrons flowing from the top of the fin downward. The transistor's characteristics and design is initially explored via simulation and modelling. In this modelling, it is found that the narrow dimension of the fin must be sub-micron to allow for the device to be turned off with no leakage current and have a positive threshold voltage. Several process modules are developed and integrated to fabricate the device. A smooth vertical etch leaving low damage to the surfaces is demonstrated and characterized, preventing micromasking during the GaN dry etch. Methods of removing damage from the dry etch are tested, including regrowth and wet etching. Several hard masks were developed to be used in conjunction with this GaN etch for various requirements of the process, such as material constraints and self-aligning a metal contact. Multiple techniques are tested to deposit and pattern the gate oxide and metal to ensure good contact with the channel without causing unwanted shorts. To achieve small fin dimensions, a self-aligned transistor process flow is presented allowing for smaller critical dimensions at increased fabrication tolerances by avoiding the use of lithographic steps that require alignments to very high accuracy. In the case of the device design presented, the fins are lithographically defined at the limit of i-line stepper system. From this single lithography, the sources are formed, fins are etched, and the gate insulator and metal are deposited. The first functional fabricated devices are presented, but exhibit a few differences from the model. A threshold voltage of -6 V, was measured, with an ID of 5 kA/cm2 at 3 V, and Ron of 0.6 mO/cm 2. The current is limited by the Schottky nature of the top contacts and show a turn-on voltage as a result. These measurements are comparable to recently published GaN fin MOSFET data, whose devices were defined by e-beam lithography. This dissertation work sought to show that a vertical conduction fin MOSFET can be fabricated on GaN. Furthermore, it aimed to provide a self-aligned process that does not require e-beam lithography. With further development, such devices can be designed to hold large voltages while maintaining a small footprint.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jaffe, Adam; Lin, Yu; Beavers, Christine M.

Here, we report the first high-pressure single-crystal structures of hybrid perovskites. The crystalline semiconductors (MA)PbX 3 (MA = CH 3NH 3 +, X = Br – or I –) afford us the rare opportunity of understanding how compression modulates their structures and thereby their optoelectronic properties. Using atomic coordinates obtained from high-pressure single-crystal X-ray diffraction we track the perovskites’ precise structural evolution upon compression. These structural changes correlate well with pressure-dependent single-crystal photoluminescence (PL) spectra and high-pressure bandgaps derived from density functional theory. We further observe dramatic piezochromism where the solids become lighter in color and then transition to opaquemore » black with compression. Indeed, electronic conductivity measurements of (MA)PbI 3 obtained within a diamond-anvil cell show that the material’s resistivity decreases by 3 orders of magnitude between 0 and 51 GPa. The activation energy for conduction at 51 GPa is only 13.2(3) meV, suggesting that the perovskite is approaching a metallic state. Furthermore, the pressure response of mixed-halide perovskites shows new luminescent states that emerge at elevated pressures. We recently reported that the perovskites (MA)Pb(Br xI 1–x) 3 (0.2 < x < 1) reversibly form light-induced trap states, which pin their PL to a low energy. This may explain the low voltages obtained from solar cells employing these absorbers. Our high-pressure PL data indicate that compression can mitigate this PL redshift and may afford higher steady-state voltages from these absorbers. These studies show that pressure can significantly alter the transport and thermodynamic properties of these technologically important semiconductors.« less

Fiber optic gas detection system for health monitoring of oil-filled transformer

NASA Astrophysics Data System (ADS)

Ho, H. L.; Ju, J.; Jin, W.

2009-10-01

This paper reports the development of a fiber-optic gas detection system capable of detecting three types of dissolved fault gases in oil-filled power transformers or equipment. The system is based on absorption spectroscopy and the target gases include acetylene (C2H2), methane (CH4) and ethylene (C2H4). Low-cost multi-pass sensor heads using fiber coupled micro-optic cells are employed for which the interaction length is up to 4m. Also, reference gas cells made of photonic bandgap (PBG) fiber are implemented. The minimum detectable gas concentrations for methane, acetylene and ethylene are 5ppm, 2ppm and 50ppm respectively.

Device for modular input high-speed multi-channel digitizing of electrical data

DOEpatents

VanDeusen, Alan L.; Crist, Charles E.

1995-09-26

A multi-channel high-speed digitizer module converts a plurality of analog signals to digital signals (digitizing) and stores the signals in a memory device. The analog input channels are digitized simultaneously at high speed with a relatively large number of on-board memory data points per channel. The module provides an automated calibration based upon a single voltage reference source. Low signal noise at such a high density and sample rate is accomplished by ensuring the A/D converters are clocked at the same point in the noise cycle each time so that synchronous noise sampling occurs. This sampling process, in conjunction with an automated calibration, yields signal noise levels well below the noise level present on the analog reference voltages.

Radionuclide calorimeter system

DOEpatents

Donohoue, Thomas P.; Oertel, Christopher P.; Tyree, William H.; Valdez, Joe L.

1991-11-26

A circuit for measuring temperature differentials in a calorimeter is disclosed. The temperature differential between the reference element and sample element containing a radioactive material is measured via a wheatstone bridge arrangement of thermistors. The bridge is driven with an alternating current on a pulsed basis to maintain the thermal floor of the calorimeter at a low reference value. A lock-in amplifier connected to the bridge phase locks a signal from the bridge to the input pulsed AC signal to provide a DC voltage. The DC voltage is sampled over time and provided to a digital computer. The digital computer, using curve fitting algorithms, will derive a function for the sample data. From the function, an equilibrium value for the temperature may be calculated.

Radionuclide calorimeter system

DOEpatents

Donohoue, T.P.; Oertel, C.P.; Tyree, W.H.; Valdez, J.L.

1991-11-26

A circuit for measuring temperature differentials in a calorimeter is disclosed. The temperature differential between the reference element and sample element containing a radioactive material is measured via a Wheatstone bridge arrangement of thermistors. The bridge is driven with an alternating current on a pulsed basis to maintain the thermal floor of the calorimeter at a low reference value. A lock-in amplifier connected to the bridge phase locks a signal from the bridge to the input pulsed AC signal to provide a DC voltage. The DC voltage is sampled over time and provided to a digital computer. The digital computer, using curve fitting algorithms, will derive a function for the sample data. From the function, an equilibrium value for the temperature may be calculated. 7 figures.

Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire.

PubMed

Fang, Hehai; Hu, Weida; Wang, Peng; Guo, Nan; Luo, Wenjin; Zheng, Dingshan; Gong, Fan; Luo, Man; Tian, Hongzheng; Zhang, Xutao; Luo, Chen; Wu, Xing; Chen, Pingping; Liao, Lei; Pan, Anlian; Chen, Xiaoshuang; Lu, Wei

2016-10-12

One-dimensional InAs nanowires (NWs) have been widely researched in recent years. Features of high mobility and narrow bandgap reveal its great potential of optoelectronic applications. However, most reported work about InAs NW-based photodetectors is limited to the visible waveband. Although some work shows certain response for near-infrared light, the problems of large dark current and small light on/off ratio are unsolved, thus significantly restricting the detectivity. Here in this work, a novel "visible light-assisted dark-current suppressing method" is proposed for the first time to reduce the dark current and enhance the infrared photodetection of single InAs NW photodetectors. This method effectively increases the barrier height of the metal-semiconductor contact, thus significantly making the device a metal-semiconductor-metal (MSM) photodiode. These MSM photodiodes demonstrate broadband detection from less than 1 μm to more than 3 μm and a fast response of tens of microseconds. A high detectivity of ∼10 12 Jones has been achieved for the wavelength of 2000 nm at a low bias voltage of 0.1 V with corresponding responsivity of as much as 40 A/W. Even for the incident wavelength of 3113 nm, a detectivity of ∼10 10 Jones and a responsivity of 0.6 A/W have been obtained. Our work has achieved an extended detection waveband for single InAs NW photodetector from visible and near-infrared to mid-infrared. The excellent performance for infrared detection demonstrated the great potential of narrow bandgap NWs for future infrared optoelectronic applications.

Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon

NASA Astrophysics Data System (ADS)

Ko, Wai Son; Bhattacharya, Indrasen; Tran, Thai-Truong D.; Ng, Kar Wei; Adair Gerke, Stephen; Chang-Hasnain, Connie

2016-09-01

Highly sensitive and fast photodetectors can enable low power, high bandwidth on-chip optical interconnects for silicon integrated electronics. III-V compound semiconductor direct-bandgap materials with high absorption coefficients are particularly promising for photodetection in energy-efficient optical links because of the potential to scale down the absorber size, and the resulting capacitance and dark current, while maintaining high quantum efficiency. We demonstrate a compact bipolar junction phototransistor with a high current gain (53.6), bandwidth (7 GHz) and responsivity (9.5 A/W) using a single crystalline indium phosphide nanopillar directly grown on a silicon substrate. Transistor gain is obtained at sub-picowatt optical power and collector bias close to the CMOS line voltage. The quantum efficiency-bandwidth product of 105 GHz is the highest for photodetectors on silicon. The bipolar junction phototransistor combines the receiver front end circuit and absorber into a monolithic integrated device, eliminating the wire capacitance between the detector and first amplifier stage.

Room temperature-synthesized vertically aligned InSb nanowires: electrical transport and field emission characteristics

PubMed Central

2013-01-01

Vertically aligned single-crystal InSb nanowires were synthesized via the electrochemical method at room temperature. The characteristics of Fourier transform infrared spectrum revealed that in the syntheses of InSb nanowires, energy bandgap shifts towards the short wavelength with the occurrence of an electron accumulation layer. The current–voltage curve, based on the metal–semiconductor–metal model, showed a high electron carrier concentration of 2.0 × 1017 cm−3 and a high electron mobility of 446.42 cm2 V−1 s−1. Additionally, the high carrier concentration of the InSb semiconductor with the surface accumulation layer induced a downward band bending effect that reduces the electron tunneling barrier. Consequently, the InSb nanowires exhibit significant field emission properties with an extremely low turn-on field of 1.84 V μm−1 and an estimative threshold field of 3.36 V μm−1. PMID:23399075

Hybrid organic-inorganic inks flatten the energy landscape in colloidal quantum dot solids

NASA Astrophysics Data System (ADS)

Liu, Mengxia; Voznyy, Oleksandr; Sabatini, Randy; García de Arquer, F. Pelayo; Munir, Rahim; Balawi, Ahmed Hesham; Lan, Xinzheng; Fan, Fengjia; Walters, Grant; Kirmani, Ahmad R.; Hoogland, Sjoerd; Laquai, Frédéric; Amassian, Aram; Sargent, Edward H.

2017-02-01

Bandtail states in disordered semiconductor materials result in losses in open-circuit voltage (Voc) and inhibit carrier transport in photovoltaics. For colloidal quantum dot (CQD) films that promise low-cost, large-area, air-stable photovoltaics, bandtails are determined by CQD synthetic polydispersity and inhomogeneous aggregation during the ligand-exchange process. Here we introduce a new method for the synthesis of solution-phase ligand-exchanged CQD inks that enable a flat energy landscape and an advantageously high packing density. In the solid state, these materials exhibit a sharper bandtail and reduced energy funnelling compared with the previous best CQD thin films for photovoltaics. Consequently, we demonstrate solar cells with higher Voc and more efficient charge injection into the electron acceptor, allowing the use of a closer-to-optimum bandgap to absorb more light. These enable the fabrication of CQD solar cells made via a solution-phase ligand exchange, with a certified power conversion efficiency of 11.28%. The devices are stable when stored in air, unencapsulated, for over 1,000 h.

Photovoltaic-Pyroelectric Coupled Effect Induced Electricity for Self-Powered Photodetector System.

PubMed

Ma, Nan; Zhang, Kewei; Yang, Ya

2017-12-01

Ferroelectric materials have demonstrated novel photovoltaic effect to scavenge solar energy. However, most of the ferroelectric materials with wide bandgaps (2.7-4 eV) suffer from low power conversion efficiency of less than 0.5% due to absorbing only 8-20% of solar spectrum. Instead of harvesting solar energy, these ferroelectric materials can be well suited for photodetector applications, especially for sensing near-UV irradiations. Here, a ferroelectric BaTiO 3 film-based photodetector is demonstrated that can be operated without using any external power source and a fast sensing of 405 nm light illumination is enabled. As compared with photovoltaic effect, both the responsivity and the specific detectivity of the photodetector can be dramatically enhanced by larger than 260% due to the light-induced photovoltaic-pyroelectric coupled effect. A self-powered photodetector array system can be utilized to achieve spatially resolved light intensity detection by recording the output voltage signals as a mapping figure. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon

PubMed Central

Ko, Wai Son; Bhattacharya, Indrasen; Tran, Thai-Truong D.; Ng, Kar Wei; Adair Gerke, Stephen; Chang-Hasnain, Connie

2016-01-01

Highly sensitive and fast photodetectors can enable low power, high bandwidth on-chip optical interconnects for silicon integrated electronics. III-V compound semiconductor direct-bandgap materials with high absorption coefficients are particularly promising for photodetection in energy-efficient optical links because of the potential to scale down the absorber size, and the resulting capacitance and dark current, while maintaining high quantum efficiency. We demonstrate a compact bipolar junction phototransistor with a high current gain (53.6), bandwidth (7 GHz) and responsivity (9.5 A/W) using a single crystalline indium phosphide nanopillar directly grown on a silicon substrate. Transistor gain is obtained at sub-picowatt optical power and collector bias close to the CMOS line voltage. The quantum efficiency-bandwidth product of 105 GHz is the highest for photodetectors on silicon. The bipolar junction phototransistor combines the receiver front end circuit and absorber into a monolithic integrated device, eliminating the wire capacitance between the detector and first amplifier stage. PMID:27659796

Frequency pulling in a low-voltage medium-power gyrotron

NASA Astrophysics Data System (ADS)

Luo, Li; Du, Chao-Hai; Huang, Ming-Guang; Liu, Pu-Kun

2018-04-01

Many recent biomedical applications use medium-power frequency-tunable terahertz (THz) sources, such as sensitivity-enhanced nuclear magnetic resonance, THz imaging, and biomedical treatment. As a promising candidate, a low-voltage gyrotron can generate watt-level, continuous THz-wave radiation. In particular, the frequency-pulling effect in a gyrotron, namely, the effect of the electron beam parameters on the oscillation frequency, can be used to tune the operating frequency. Most previous investigations used complicated and time-consuming gyrotron nonlinear theory to study the influence of many beam parameters on the interaction performance. While gyrotron linear theory investigation demonstrates the advantages of rapidly and clearly revealing the physical influence of individual key beam parameters on the overall system performance, this paper demonstrates systematically the use of gyrotron linear theory to study the frequency-pulling effect in a low-voltage gyrotron with either a Gaussian or a sinusoidal axial-field profile. Furthermore, simulations of a gyrotron operating in the first axial mode are carried out in the framework of nonlinear theory as a contrast. Close agreement is achieved between the two theories. Besides, some interesting results are obtained. In a low-current sinusoidal-profile cavity, the ranges of frequency variation for different axial modes are isolated from each other, and the frequency tuning bandwidth for each axial mode increases by increasing either the beam voltage or pitch factor. Lowering the voltage, the total tuning ranges are squeezed and become concentrated. However, the isolated frequency regions of each axial mode cannot be linked up unless the beam current is increased, meaning that higher current operation is the key to achieving a wider and continuous tuning frequency range. The results presented in this paper can provide a reference for designing a broadband low-voltage gyrotron.

Electronic bandstructure of semiconductor dilute bismide structures

NASA Astrophysics Data System (ADS)

Erucar, T.; Nutku, F.; Donmez, O.; Erol, A.

2017-02-01

In this work electronic band structure of dilute bismide GaAs/GaAs1-xBix quantum well structures with 1.8% and 3.75% bismuth compositions have been investigated both experimentally and theoretically. Photoluminescence (PL) measurements reveal that effective bandgap of the samples decreases approximately 65 meV per bismuth concentration. Temperature dependence of the effective bandgap is obtained to be higher for the sample with higher bismuth concentration. Moreover, both asymmetric characteristic at the low energy tail of the PL and full width at half maximum (FWHM) of PL peak increase with increasing bismuth composition as a result of increased Bi related defects located above valence band (VB). In order to explain composition dependence of the effective bandgap quantitatively, valence band anti-crossing (VBAC) model is used. Bismuth composition and temperature dependence of effective bandgap in a quantum well structure is modeled by solving Schrödinger equation and compared with experimental PL data.

Enhanced Impurity-Free Intermixing Bandgap Engineering for InP-Based Photonic Integrated Circuits

NASA Astrophysics Data System (ADS)

Cui, Xiao; Zhang, Can; Liang, Song; Zhu, Hong-Liang; Hou, Lian-Ping

2014-04-01

Impurity-free intermixing of InGaAsP multiple quantum wells (MQW) using sputtering Cu/SiO2 layers followed by rapid thermal processing (RTP) is demonstrated. The bandgap energy could be modulated by varying the sputtering power and time of Cu, RTP temperature and time to satisfy the demands for lasers, modulators, photodetector, and passive waveguides for the photonic integrated circuits with a simple procedure. The blueshift of the bandgap wavelength of MQW is experimentally investigated on different sputtering and annealing conditions. It is obvious that the introduction of the Cu layer could increase the blueshift more greatly than the common impurity free vacancy disordering technique. A maximum bandgap blueshift of 172 nm is realized with an annealing condition of 750°C and 200s. The improved technique is promising for the fabrication of the active/passive optoelectronic components on a single wafer with simple process and low cost.

Optimization and experimental validation of stiff porous phononic plates for widest complete bandgap of mixed fundamental guided wave modes

NASA Astrophysics Data System (ADS)

Hedayatrasa, Saeid; Kersemans, Mathias; Abhary, Kazem; Uddin, Mohammad; Van Paepegem, Wim

2018-01-01

Phononic crystal plates (PhPs) have promising application in manipulation of guided waves for design of low-loss acoustic devices and built-in acoustic metamaterial lenses in plate structures. The prominent feature of phononic crystals is the existence of frequency bandgaps over which the waves are stopped, or are resonated and guided within appropriate defects. Therefore, maximized bandgaps of PhPs are desirable to enhance their phononic controllability. Porous PhPs produced through perforation of a uniform background plate, in which the porous interfaces act as strong reflectors of wave energy, are relatively easy to produce. However, the research in optimization of porous PhPs and experimental validation of achieved topologies has been very limited and particularly focused on bandgaps of flexural (asymmetric) wave modes. In this paper, porous PhPs are optimized through an efficient multiobjective genetic algorithm for widest complete bandgap of mixed fundamental guided wave modes (symmetric and asymmetric) and maximized stiffness. The Pareto front of optimization is analyzed and variation of bandgap efficiency with respect to stiffness is presented for various optimized topologies. Selected optimized topologies from the stiff and compliant regimes of Pareto front are manufactured by water-jetting an aluminum plate and their promising bandgap efficiency is experimentally observed. An optimized Pareto topology is also chosen and manufactured by laser cutting a Plexiglas (PMMA) plate, and its performance in self-collimation and focusing of guided waves is verified as compared to calculated dispersion properties.

Buffer Layer Effects on Tandem InGaAs TPV Devices

NASA Technical Reports Server (NTRS)

Wilt, David M.; Wehrer, Rebecca J.; Maurer, William F.

2004-01-01

Single junction indium gallium arsenide (InGaAs) based TPV devices have demonstrated efficiencies in excess of 20% at radiator temperatures of 1058 C. Modeling suggests that efficiency improvements in single bandgap devices should continue although they will eventually plateau. One approach for extending efficiencies beyond the single bandgap limit is to follow the technique taken in the solar cell field, namely tandem TPV cells. Tandem photovoltaic devices are traditionally composed of cells of decreasing bandgap, connected electrically and optically in series. The incident light impinges upon the highest bandgap first. This device acts as a sieve, absorbing the high-energy photons, while allowing the remainder to pass through to the underlying cell(s), and so on. Tandem devices reduce the energy lost to overexcitation as well as reducing the current density (Jsc). Reduced Jsc results in lower resistive losses and enables the use of thinner and lower doped lateral current conducting layers as well as a higher pitch grid design. Fabricating TPV tandem devices utilizing InGaAs for all of the component cells in a two cell tandem necessitates the inclusion of a buffer layer in-between the high bandgap device (In0.53 Ga0.47As - 0.74eV) and the low bandgap device (In0.66Ga0.34As - 0.63eV) to accommodate the approximately 1% lattice strain generated due to the change in InGaAs composition. To incorporate only a single buffer layer structure, we have investigated the use of the indium phosphide (InP) substrate as a superstrate. Thus the high-bandgap, lattice- matched device is deposited first, followed by the buffer structure and the low-bandgap cell. The near perfect transparency of the high bandgap (1.35eV) iron-doped InP permits the device to be oriented such that the light enters through the substrate. In this paper we examine the impact of the buffer layer on the underlying lattice-matched InGaAs device. 0.74eV InGaAs devices were produced in a variety of configurations both with and without buffer layers. All structures were characterized by reciprocal space x-ray diffraction to determine epilayer composition and residual strain. Electrical characterization of the devices was performed to examine the effect of the buffer on the device performance. The effect of the buffer structure depends upon where it is positioned. When near the emitter region, a 2.6x increase in dark current was measured, whereas no change in dark current was observed when it was near the base region.

Amorphous silicon solar cell allowing infrared transmission

DOEpatents

Carlson, David E.

1979-01-01

An amorphous silicon solar cell with a layer of high index of refraction material or a series of layers having high and low indices of refraction material deposited upon a transparent substrate to reflect light of energies greater than the bandgap energy of the amorphous silicon back into the solar cell and transmit solar radiation having an energy less than the bandgap energy of the amorphous silicon.

Optical Properties of III-V Semiconductor Nanostructures and Quantum Wells

DTIC Science & Technology

2006-12-31

measurements were made using a BOMEM Fourier-transform infrared spectrometer in conjunction with a continuous flow cryostat. A low- noise current...infrared photodetector ( QWIP ). Quantum well infrared photodetectors are designed from wide bandgap (III-V) semiconductor materials in such a way where...quantum confinement is created. Unlike HgCdTe which utilizes electronic transitions across the fundamental bandgap, QWIPs relies on transitions between

Characterization of physiochemical properties of polymeric and electrochemical materials for aerospace flight

NASA Technical Reports Server (NTRS)

Rock, M.; Kunigahalli, V.; Khan, S.; Mcnair, A.

1984-01-01

Nickel-cadmium rechargeable batteries are a vital and reliable energy storage source for aerospace applications. As the demand for longer life and more reliable space batteries increases, the understanding and solving of cell aging factors and mechanisms become essential. Over the years, many cell designs and manufacturing process changes have been developed and implemented. Cells fabricated with various design features were life cycled in a simulated low-Earth orbit regime. Following the test program, a comprehensive electrochemical analysis of cell components was undertaken to study cell degradation mechanisms. Discharge voltage degradation or voltage plateau has been observed during orbit cycling, but, its cause and explanation have been the subject of much discussion. A Hg/HgO reference electrode was used to monitor the reference versus each electrode potential during the discharge of a cycled cell. The results indicate that the negative electrode was responsible for the voltage plateau. Cell analysis revealed large crystals of cadmium hydroxide on the surface of the negative electrode and throughout the separator.

A fully on-chip fast-transient NMOS low dropout voltage regulator with quasi floating gate pass element

NASA Astrophysics Data System (ADS)

Wang, Han; Gou, Chao; Luo, Kai

2017-04-01

This paper presents a fully on-chip NMOS low-dropout regulator (LDO) for portable applications with quasi floating gate pass element and fast transient response. The quasi floating gate structure makes the gate of the NMOS transistor only periodically charged or refreshed by the charge pump, which allows the charge pump to be a small economical circuit with small silicon area. In addition, a variable reference circuit is introduced enlarging the dynamic range of error amplifier during load transient. The proposed LDO has been implemented in a 0.35 μm BCD process. From experimental results, the regulator can operate with a minimum dropout voltage of 250 mV at a maximum 1 A load and {I}{{Q}} of 395 μA. Under full-range load current step, the voltage undershoot and overshoot of the proposed LDO are reduced to 50 and 26 mV, respectively.

Comparative High Voltage Impulse Measurement

PubMed Central

FitzPatrick, Gerald J.; Kelley, Edward F.

1996-01-01

A facility has been developed for the determination of the ratio of pulse high voltage dividers over the range from 10 kV to 300 kV using comparative techniques with Kerr electro-optic voltage measurement systems and reference resistive voltage dividers. Pulse voltage ratios of test dividers can be determined with relative expanded uncertainties of 0.4 % (coverage factor k = 2 and thus a two standard deviation estimate) or less using the complementary resistive divider/Kerr cell reference systems. This paper describes the facility and specialized procedures used at NIST for the determination of test voltage divider ratios through comparative techniques. The error sources and special considerations in the construction and use of reference voltage dividers to minimize errors are discussed, and estimates of the measurement uncertainties are presented. PMID:27805083

High ESD Breakdown-Voltage InP HBT Transimpedance Amplifier IC for Optical Video Distribution Systems

NASA Astrophysics Data System (ADS)

Sano, Kimikazu; Nagatani, Munehiko; Mutoh, Miwa; Murata, Koichi

This paper is a report on a high ESD breakdown-voltage InP HBT transimpedance amplifier IC for optical video distribution systems. To make ESD breakdown-voltage higher, we designed ESD protection circuits integrated in the TIA IC using base-collector/base-emitter diodes of InP HBTs and resistors. These components for ESD protection circuits have already existed in the employed InP HBT IC process, so no process modifications were needed. Furthermore, to meet requirements for use in optical video distribution systems, we studied circuit design techniques to obtain a good input-output linearity and a low-noise characteristic. Fabricated InP HBT TIA IC exhibited high human-body-model ESD breakdown voltages (±1000V for power supply terminals, ±200V for high-speed input/output terminals), good input-output linearity (less than 2.9-% duty-cycle-distortion), and low noise characteristic (10.7pA/√Hz averaged input-referred noise current density) with a -3-dB-down higher frequency of 6.9GHz. To the best of our knowledge, this paper is the first literature describing InP ICs with high ESD-breakdown voltages.

Highly Simplified Reddish Orange Phosphorescent Organic Light-Emitting Diodes Incorporating a Novel Carrier- and Exciton-Confining Spiro-Exciplex-Forming Host for Reduced Efficiency Roll-off.

PubMed

Xu, Ting; Zhang, Ye-Xin; Wang, Bo; Huang, Chen-Chao; Murtaza, Imran; Meng, Hong; Liao, Liang-Sheng

2017-01-25

A novel exciplex-forming host is applied so as to design highly simplified reddish orange light-emitting diodes (OLEDs) with low driving voltage, high efficiency, and an extraordinarily low efficiency roll-off, by combining N,N-10-triphenyl-10H-spiro [acridine-9,9'-fluoren]-3'-amine (SAFDPA) with 4,7-diphenyl-1,10-phenanthroline (Bphen) doped with trivalent iridium complex bis(2-methyldibenzo[f,h]quinoxaline) (acetylacetonate)iridium(III) (Ir(MDQ) 2 (acac)). The reddish orange OLEDs achieve a strikingly high power efficiency (PE) of 31.80 lm/W with an ultralow threshold voltage of 2.24 V which is almost equal to the triplet energy level of the phosphorescent reddish orange emitting dopant. The power efficiency of the device with the exciplex-forming host is enhanced, achieving 36.2% mainly owing to the lower operating voltage by the novel exciplex forming cohost, compared with the reference device (23.54 lm/W). Moreover, the OLEDs show extraordinarily low current efficiency (CE) roll-off to 1.41% at the brightness from 500 to 5000 cd/m 2 with a maximal CE of 32.87 cd/A (EQE max = 11.01%). The devices display a good reddish orange color (CIE of (0.628, 0.372) at 500 cd/m 2 ) nearly without color shift with increasing brightness. Co-host architecture phosphorescent OLEDs show a simpler device structure, lower working voltage, and a better efficiency and stability than those of the reference devices without the cohost architecture, which helps to simplify the OLED structure, lower the cost, and popularize OLED technology.

Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage

NASA Astrophysics Data System (ADS)

Watahiki, Tatsuro; Yuda, Yohei; Furukawa, Akihiko; Yamamuka, Mikio; Takiguchi, Yuki; Miyajima, Shinsuke

2017-11-01

Heterojunction p-Cu2O/n-β-Ga2O3 diodes were fabricated on an epitaxially grown β-Ga2O3(001) layer. The reverse breakdown voltage of these p-n diodes reached 1.49 kV with a specific on-resistance of 8.2 mΩ cm2. The leakage current of the p-n diodes was lower than that of the Schottky barrier diode due to the higher barrier height against the electron. The ideality factor of the p-n diode was 1.31. It indicated that some portion of the recombination current at the interface contributed to the forward current, but the diffusion current was the dominant. The forward current more than 100 A/cm2 indicated the lower conduction band offset at the hetero-interface between Cu2O and Ga2O3 layers than that predicted from the bulk properties, resulting in such a high forward current without limitation. These results open the possibility of advanced device structures for wide bandgap Ga2O3 to achieve higher breakdown voltage and lower on-resistance.

Effects of trap-assisted tunneling on gate-induced drain leakage in silicon-germanium channel p-type FET for scaled supply voltages

NASA Astrophysics Data System (ADS)

Tiwari, Vishal A.; Divakaruni, Rama; Hook, Terence B.; Nair, Deleep R.

2016-04-01

Silicon-germanium is considered as an alternative channel material to silicon p-type FET (pFET) for the development of energy efficient high performance transistors for 28 nm and beyond in a high-k metal gate technology because of its lower threshold voltage and higher mobility. However, gate-induced drain leakage (GIDL) is a concern for high threshold voltage device design because of tunneling at reduced bandgap. In this work, the trap-assisted tunneling and band-to-band tunneling (BTBT) effects on GIDL is analyzed and modeled for SiGe pFETs. Experimental results and Monte Carlo simulation results reveal that the pre-halo germanium pre-amorphization implant used to contain the short channel effects contribute to GIDL at the drain sidewall in addition to GIDL due to BTBT in SiGe devices. The results are validated by comparing the experimental observations with the numerical simulation and a set of calibrated models are used to describe the GIDL mechanisms for various drain and gate bias.

Memory Device and Nanofabrication Techniques Using Electrically Configurable Materials

NASA Astrophysics Data System (ADS)

Ascenso Simões, Bruno

Development of novel nanofabrication techniques and single-walled carbon nanotubes field configurable transistor (SWCNT-FCT) memory devices using electrically configurable materials is presented. A novel lithographic technique, electric lithography (EL), that uses electric field for pattern generation has been demonstrated. It can be used for patterning of biomolecules on a polymer surface and patterning of resist as well. Using electrical resist composed of a polymer having Boc protected amine group and iodonium salt, Boc group on the surface of polymer was modified to free amine by applying an electric field. On the modified surface of the polymer, Streptavidin pattern was fabricated with a sub-micron scale. Also patterning of polymer resin composed of epoxy monomers and diaryl iodonium salt by EL has been demonstrated. Reaction mechanism for electric resist configuration is believed to be induced by an acid generation via electrochemical reduction in the resist. We show a novel field configurable transistor (FCT) based on single-walled carbon nanotube network field-effect transistors in which poly (ethylene glycol) crosslinked by electron-beam is incorporated into the gate. The device conductance can be configured to arbitrary states reversibly and repeatedly by applying external gate voltages. Raman spectroscopy revealed that evolution of the ratio of D- to G-band intensity in the SWCNTs of the FCT progressively increases as the device is configured to lower conductance states. Electron transport studies at low temperatures showed a strong temperature dependence of the resistance. Band gap widening of CNTs up to ˜ 4 eV has been observed by examining the differential conductance-gate voltage-bias voltage relationship. The switching mechanism of the FCT is attributed a structural transformation of CNTs via reversible hydrogenation and dehydrogenations induced by gate voltages, which tunes the CNT bandgap continuously and reversibly to non-volatile analog values. The CNT transistors with field tunable band gaps would facilitate field programmable circuits based on the self-organized CNTs, and might also lead to novel analog memory, neuromorphic, and photonic devices.

Impact of hydrogen dilution on optical properties of intrinsic hydrogenated amorphous silicon films prepared by high density plasma chemical vapor deposition for solar cell applications

NASA Astrophysics Data System (ADS)

Chen, Huai-Yi; Lee, Yao-Jen; Chang, Chien-Pin; Koo, Horng-Show; Lai, Chiung-Hui

2013-01-01

P-i-n single-junction hydrogenated amorphous silicon (a-Si:H) thin film solar cells were successfully fabricated in this study on a glass substrate by high density plasma chemical vapor deposition (HDP-CVD) at low power of 50 W, low temperature of 200°C and various hydrogen dilution ratios (R). The open circuit voltage (Voc ), short circuit current density (Jsc ), fill factor (FF) and conversion efficiency (η) of the solar cell as well as the refractive index (n) and absorption coefficient (α) of the i-layer at 600 nm wavelength rise with increasing R until an abrupt drop at high hydrogen dilution, i.e. R > 0.95. However, the optical energy bandgap (Eg ) of the i-layer decreases with the R increase. Voc and α are inversely correlated with Eg . The hydrogen content affects the i-layer and p/i interface quality of the a-Si:H thin film solar cell with an optimal value of R = 0.95, which corresponds to solar cell conversion efficiency of 3.85%. The proposed a-Si:H thin film solar cell is expected to be improved in performance.

Method and apparatus for low-loss signal transmission

NASA Technical Reports Server (NTRS)

Shimabukuro, Fred (Inventor); Yeh, Cavour (Inventor); Fraser, Scott (Inventor); Siegel, Peter (Inventor)

2008-01-01

The present invention relates to the field of radio-frequency (RF) waveguides. More specifically, the present invention pertains to a method and apparatus that provides ultra-low-loss RF waveguide structures targeted between approximately 300 GHz and approximately 30 THz. The RF waveguide includes a hollow core and a flexible honeycomb, periodic-bandgap structure surrounding the hollow core. The flexible honeycomb, periodic-bandgap structure is formed of a plurality of tubes formed of a dielectric material such as of low-loss quartz, polyethylene, or high-resistivity silicon. Using the RF waveguide, a user may attach a terahertz signal source to the waveguide and pass signals through the waveguide, while a terahertz signal receiver receives the signals.

Low bandgap mid-infrared thermophotovoltaic arrays based on InAs

NASA Astrophysics Data System (ADS)

Krier, A.; Yin, M.; Marshall, A. R. J.; Kesaria, M.; Krier, S. E.; McDougall, S.; Meredith, W.; Johnson, A. D.; Inskip, J.; Scholes, A.

2015-11-01

We demonstrate the first low bandgap thermophotovoltaic (TPV) arrays capable of operating with heat sources at temperatures as low as 345 °C, which is the lowest ever reported. The individual array elements are based on narrow band gap InAs/InAs0.61Sb0.13P0.26 photodiode structures. External power conversion efficiency was measured to be ∼3% from a single element at room temperature, using a black body at 950 °C. Both 25-element and 65-element arrays were fabricated and exhibited a TPV response at different source temperatures in the range 345-950 °C suitable for electricity generation from waste heat and other applications.

A High-Linearity Low-Noise Amplifier with Variable Bandwidth for Neural Recoding Systems

NASA Astrophysics Data System (ADS)

Yoshida, Takeshi; Sueishi, Katsuya; Iwata, Atsushi; Matsushita, Kojiro; Hirata, Masayuki; Suzuki, Takafumi

2011-04-01

This paper describes a low-noise amplifier with multiple adjustable parameters for neural recording applications. An adjustable pseudo-resistor implemented by cascade metal-oxide-silicon field-effect transistors (MOSFETs) is proposed to achieve low-signal distortion and wide variable bandwidth range. The amplifier has been implemented in 0.18 µm standard complementary metal-oxide-semiconductor (CMOS) process and occupies 0.09 mm2 on chip. The amplifier achieved a selectable voltage gain of 28 and 40 dB, variable bandwidth from 0.04 to 2.6 Hz, total harmonic distortion (THD) of 0.2% with 200 mV output swing, input referred noise of 2.5 µVrms over 0.1-100 Hz and 18.7 µW power consumption at a supply voltage of 1.8 V.

Fullerene derivative-doped zinc oxide nanofilm as the cathode of inverted polymer solar cells with low-bandgap polymer (PTB7-Th) for high performance.

PubMed

Liao, Sih-Hao; Jhuo, Hong-Jyun; Cheng, Yu-Shan; Chen, Show-An

2013-09-14

Modification of a ZnO cathode by doping it with a hydroxyl-containing derivative - giving a ZnO-C60 cathode - provides a fullerene-derivative-rich surface and enhanced electron conduction. Inverted polymer solar cells with the ZnO-C60 cathode display markedly improved power conversion efficiency compared to those with a pristine ZnO cathode, especially when the active layer includes the low-bandgap polymer PTB7-Th. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

An AlN/Al 0.85Ga 0.15N high electron mobility transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.

2016-07-22

An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al 0.85Ga 0.15N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high I on/I off current ratio greater than 10 7 and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. In conclusion,more » the room temperature voltage-dependent 3-terminal off-state drain current was adequately modeled with Frenkel-Poole emission.« less

An AlN/Al{sub 0.85}Ga{sub 0.15}N high electron mobility transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.

2016-07-18

An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al{sub 0.85}Ga{sub 0.15}N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high I{sub on}/I{sub off} current ratio greater than 10{sup 7} and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. The room temperature voltage-dependent 3-terminalmore » off-state drain current was adequately modeled with Frenkel-Poole emission.« less

Tunneling calculations for GaAs-Al(x)Ga(1-x)As graded band-gap sawtooth superlattices

NASA Technical Reports Server (NTRS)

Forrest, Kathrine; Meijer, Paul H. E.

1990-01-01

The transmission resonance spectra and tunneling current-voltage characteristics for direct conduction band electrons in sawtooth GaAs-Al(x)Ga(1-x)As superlattices are computed. Only direct-gap interfaces are considered. It is found that sawtooth superlattices exhibit resonant tunneling similar to that in step superlattices, manifested by correlation of peaks and regions of negative differential resistance in the current-voltage curves with transmission resonances. The Stark shift of the resonances of step-barrier superlattices is a linear function of the field, whereas in sawtooth superlattices under strong fields the shift is not a simple function of the field. This follows from the different ways in which the two structures deform under uniform electric fields: the sawtooth deforms into a staircase, at which field strength all barriers to tunneling are eradicated. The step-barrier superlattice always presents some barrier to tunneling, no matter how high the electric field strength.

Back bias induced dynamic and steep subthreshold swing in junctionless transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parihar, Mukta Singh; Kranti, Abhinav, E-mail: akranti@iiti.ac.in

In this work, we analyze back bias induced steep and dynamic subthreshold swing in junctionless double gate transistors operated in the asymmetric mode. This impact ionization induced dynamic subthreshold swing is explained in terms of the ratio between minimum hole concentration and peak electron concentration, and the dynamic change in the location of the conduction channel with applied front gate voltage. The reason for the occurrence of impact ionization at sub-bandgap drain voltages in silicon junctionless transistors is also accounted for. The optimum junctionless transistor operating at a back gate bias of −0.9 V, achieves over 5 orders of change inmore » drain current at a gate overdrive of 200 mV and drain bias of 1 V. These results for junctionless transistors are significantly better than those exhibited by silicon tunnel field effect transistors operating at the same drain bias.« less

Novel circuit design for high-impedance and non-local electrical measurements of two-dimensional materials

NASA Astrophysics Data System (ADS)

De Sanctis, Adolfo; Mehew, Jake D.; Alkhalifa, Saad; Tate, Callum P.; White, Ashley; Woodgate, Adam R.; Craciun, Monica F.; Russo, Saverio

2018-02-01

Two-dimensional materials offer a novel platform for the development of future quantum technologies. However, the electrical characterisation of topological insulating states, non-local resistance, and bandgap tuning in atomically thin materials can be strongly affected by spurious signals arising from the measuring electronics. Common-mode voltages, dielectric leakage in the coaxial cables, and the limited input impedance of alternate-current amplifiers can mask the true nature of such high-impedance states. Here, we present an optical isolator circuit which grants access to such states by electrically decoupling the current-injection from the voltage-sensing circuitry. We benchmark our apparatus against two state-of-the-art measurements: the non-local resistance of a graphene Hall bar and the transfer characteristic of a WS2 field-effect transistor. Our system allows the quick characterisation of novel insulating states in two-dimensional materials with potential applications in future quantum technologies.

Caking and characterizing graphene oxide thin films via electrodeposition technique for possible application in photoelectrochemical spliting of water

NASA Astrophysics Data System (ADS)

Singh, Nirupama; Kumar, Pushpendra; Upadhyay, Sumant; Choudhary, Surbhi; Satsangi, Vibha R.; Dass, Sahab; Shrivastav, Rohit

2013-06-01

In the present study Readymade Graphene oxide (GO) has been coated using electrochemical deposition technique [1] on to the conducting glass (ITO) substrate. Raman spectra generated D and G Peaks obtained at 1346 and 1575 cm-1 confirmed the presence of GO [2]. The UV-Visible absorption measurements provided absorption peak at 262 nm and the Tauc plots yielded band-gap energy of sample around 3.9 eV. The PEC measurements involved determination of current-voltage (I-V) characteristics, both under darkness as well as under illumination. The photocurrent of 1.21 mA/cm-2 at 0.5 V applied voltage (vs. saturated calomel electrode), was recorded under the illumination of 150 Wcm-2 (Xenon arc lamp; Oriel, USA). The photocurrent values were utilized further to calculate applied bias photon-to-current efficiency (% ABPE), which was estimated to 0.98 % at 0.5 V bias.

Device for modular input high-speed multi-channel digitizing of electrical data

DOEpatents

VanDeusen, A.L.; Crist, C.E.

1995-09-26

A multi-channel high-speed digitizer module converts a plurality of analog signals to digital signals (digitizing) and stores the signals in a memory device. The analog input channels are digitized simultaneously at high speed with a relatively large number of on-board memory data points per channel. The module provides an automated calibration based upon a single voltage reference source. Low signal noise at such a high density and sample rate is accomplished by ensuring the A/D converters are clocked at the same point in the noise cycle each time so that synchronous noise sampling occurs. This sampling process, in conjunction with an automated calibration, yields signal noise levels well below the noise level present on the analog reference voltages. 1 fig.

A new infusion pathway intactness monitoring system.

PubMed

Ogawa, Hidekuni; Yonezawa, Yoshiharu; Maki, Hiromichi; Ninomiya, Ishio; Sata, Koji; Hamada, Shingo; Caldwell, W Morton

2006-01-01

A new infusion pathway monitoring system has been developed for hospital and home use. The system consists of linear integrated circuits and a low-power 8-bit single chip microcomputer which constantly monitors the infusion pathway intactness. An AC (alternating current) voltage is induced on the patient's body by electrostatic coupling from the normal 100 volt, 60 Hz AC power line wiring field in the patient's room. The induced AC voltage can be recorded by a main electrode wrapped around the infusion polyvinyl chloride tube. A reference electrode is wrapped on the electrode to monitor the AC voltage around the main electrode. If the injection needle or infusion tube becomes detached, then the system detects changes in the induced AC voltages and alerts the nursing station, via the nurse call system or PHS (personal handy phone system).

High-Temperature Electronics: A Role for Wide Bandgap Semiconductors?

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Okojie, Robert S.; Chen, Liang-Yu

2002-01-01

It is increasingly recognized that semiconductor based electronics that can function at ambient temperatures higher than 150 C without external cooling could greatly benefit a variety of important applications, especially-in the automotive, aerospace, and energy production industries. The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300 C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog very large scale integrated circuits in this temperature range. However, practical operation of silicon power devices at ambient temperatures above 200 C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once the technology for realizing these devices become sufficiently developed that they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.

High Temperature Operation of Al 0.45Ga 0.55N/Al 0.30Ga 0.70 N High Electron Mobility Transistors

DOE PAGES

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.; ...

2017-08-01

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that have a bandgap greater than ~3.4 eV, beyond that of GaN and SiC, and are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.3 in the channel have been built and evaluated across the -50°C to +200°C temperature range. Room temperature drain current of 70 mA/mm, absent of gate leakage, and with a modest -1.3 V threshold voltage was measured. A very large I on/I off current ratio, greater than 10 8 was demonstrated over the entire temperaturemore » range, indicating that off-state leakage is below the measurement limit even at 200°C. Finally, combined with near ideal subthreshold slope factor that is just 1.3× higher than the theoretical limit across the temperature range, the excellent leakage properties are an attractive characteristic for high temperature operation.« less

High Temperature Operation of Al 0.45Ga 0.55N/Al 0.30Ga 0.70 N High Electron Mobility Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that have a bandgap greater than ~3.4 eV, beyond that of GaN and SiC, and are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.3 in the channel have been built and evaluated across the -50°C to +200°C temperature range. Room temperature drain current of 70 mA/mm, absent of gate leakage, and with a modest -1.3 V threshold voltage was measured. A very large I on/I off current ratio, greater than 10 8 was demonstrated over the entire temperaturemore » range, indicating that off-state leakage is below the measurement limit even at 200°C. Finally, combined with near ideal subthreshold slope factor that is just 1.3× higher than the theoretical limit across the temperature range, the excellent leakage properties are an attractive characteristic for high temperature operation.« less

All-Graphene Planar Self-Switching MISFEDs, Metal-Insulator-Semiconductor Field-Effect Diodes

PubMed Central

Al-Dirini, Feras; Hossain, Faruque M.; Nirmalathas, Ampalavanapillai; Skafidas, Efstratios

2014-01-01

Graphene normally behaves as a semimetal because it lacks a bandgap, but when it is patterned into nanoribbons a bandgap can be introduced. By varying the width of these nanoribbons this band gap can be tuned from semiconducting to metallic. This property allows metallic and semiconducting regions within a single Graphene monolayer, which can be used in realising two-dimensional (2D) planar Metal-Insulator-Semiconductor field effect devices. Based on this concept, we present a new class of nano-scale planar devices named Graphene Self-Switching MISFEDs (Metal-Insulator-Semiconductor Field-Effect Diodes), in which Graphene is used as the metal and the semiconductor concurrently. The presented devices exhibit excellent current-voltage characteristics while occupying an ultra-small area with sub-10 nm dimensions and an ultimate thinness of a single atom. Quantum mechanical simulation results, based on the Extended Huckel method and Nonequilibrium Green's Function Formalism, show that a Graphene Self-Switching MISFED with a channel as short as 5 nm can achieve forward-to-reverse current rectification ratios exceeding 5000. PMID:24496307

TH-CD-207B-07: Noise Modeling of Single Photon Avalanche Diode (SPAD) for Photon Counting CT Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Z; Zheng, X; Deen, J

Purpose: Silicon photomultiplier (SiPM) has recently emerged as a promising photodetector for biomedical imaging applications. Due to its high multiplication gain (comparable to PMT), fast timing, low cost and compactness, it is considered a good candidate for photon counting CT. Dark noise is a limiting factor which impacts both energy resolution and detection dynamic range. Our goal is to develop a comprehensive model for noise sources for SiPM sensors. Methods: The physical parameters used in this work were based upon a test SPAD fabricated in 130nm CMOS process. The SPAD uses an n+/p-well junction, which is isolated from the p-substratemore » by a deep n-well junction. Inter-avalanche time measurement was used to record the time interval between two adjacent avalanche pulses. After collecting 1×106 counts, the histogram was obtained and multiple exponential fitting process was used to extract the lifetime associated with the traps within the bandgap. Results: At room temperature, the breakdown voltage of the SPAD is ∼11.4V and shows a temperature coefficient of 7.7mV/°C. The dark noise of SPAD increases with both the excess biasing voltage and temperature. The primary dark counts from the model were validated against the measurement results. A maximum relative error of 8.7% is observed at 20 °C with an excess voltage of 0.5V. The probabilities of after-pulsing are found to be dependent of both temperature and excess voltage. With 0.5V excess voltage, the after-pulsing probability is 63.5% at - 30 °C and drops to ∼6.6% at 40 °C. Conclusion: A comprehensive noise model for SPAD sensor was proposed. The model takes into account of static, dynamic and statistical behavior of SPADs. We believe that this is the first SPAD circuit simulation model that includes the band-to-band tunneling dark noise contribution and temporal dependence of the after-pulsing probability.« less

Optimal design of tunable phononic bandgap plates under equibiaxial stretch

NASA Astrophysics Data System (ADS)

Hedayatrasa, Saeid; Abhary, Kazem; Uddin, M. S.; Guest, James K.

2016-05-01

Design and application of phononic crystal (PhCr) acoustic metamaterials has been a topic with tremendous growth of interest in the last decade due to their promising capabilities to manipulate acoustic and elastodynamic waves. Phononic controllability of waves through a particular PhCr is limited only to the spectrums located within its fixed bandgap frequency. Hence the ability to tune a PhCr is desired to add functionality over its variable bandgap frequency or for switchability. Deformation induced bandgap tunability of elastomeric PhCr solids and plates with prescribed topology have been studied by other researchers. Principally the internal stress state and distorted geometry of a deformed phononic crystal plate (PhP) changes its effective stiffness and leads to deformation induced tunability of resultant modal band structure. Thus the microstructural topology of a PhP can be altered so that specific tunability features are met through prescribed deformation. In the present study novel tunable PhPs of this kind with optimized bandgap efficiency-tunability of guided waves are computationally explored and evaluated. Low loss transmission of guided waves throughout thin walled structures makes them ideal for fabrication of low loss ultrasound devices and structural health monitoring purposes. Various tunability targets are defined to enhance or degrade complete bandgaps of plate waves through macroscopic tensile deformation. Elastomeric hyperelastic material is considered which enables recoverable micromechanical deformation under tuning finite stretch. Phononic tunability through stable deformation of phononic lattice is specifically required and so any topology showing buckling instability under assumed deformation is disregarded. Nondominated sorting genetic algorithm (GA) NSGA-II is adopted for evolutionary multiobjective topology optimization of hypothesized tunable PhP with square symmetric unit-cell and relevant topologies are analyzed through finite element method. Following earlier studies by the authors, specialized GA algorithm, topology mapping, assessment and analysis techniques are employed to get feasible porous topologies of assumed thick PhP, efficiently.

Final Scientific/Technical Report -- Single-Junction Organic Solar Cells with >15% Efficiency

DOE Office of Scientific and Technical Information (OSTI.GOV)

Starkenburg, Daken; Weldeab, Asmerom; Fagnani, Dan

Organic solar cells have the potential to offer low-cost solar energy conversion due to low material costs and compatibility with low-temperature and high throughput manufacturing processes. This project aims to further improve the efficiency of organic solar cells by applying a previously demonstrated molecular self-assembly approach to longer-wavelength light-absorbing organic materials. The team at the University of Florida designed and synthesized a series of low-bandgap organic semiconductors with functional hydrogen-bonding groups, studied their assembly characteristics and optoelectronic properties in solid-state thin film, and fabricated organic solar cells using solution processing. These new organic materials absorb light up 800 nm wavelength,more » and provide a maximum open-circuit voltage of 1.05 V in the resulted solar cells. The results further confirmed the effectiveness in this approach to guide the assembly of organic semiconductors in thin films to yield higher photovoltaic performance for solar energy conversion. Through this project, we have gained important understanding on designing, synthesizing, and processing organic semiconductors that contain appropriately functionalized groups to control the morphology of the organic photoactive layer in solar cells. Such fundamental knowledge could be used to further develop new functional organic materials to achieve higher photovoltaic performance, and contribute to the eventual commercialization of the organic solar cell technology.« less

Thermally enhanced photoluminescence for heat harvesting in photovoltaics

PubMed Central

Manor, Assaf; Kruger, Nimrod; Sabapathy, Tamilarasan; Rotschild, Carmel

2016-01-01

The maximal Shockley–Queisser efficiency limit of 41% for single-junction photovoltaics is primarily caused by heat dissipation following energetic-photon absorption. Solar-thermophotovoltaics concepts attempt to harvest this heat loss, but the required high temperatures (T>2,000 K) hinder device realization. Conversely, we have recently demonstrated how thermally enhanced photoluminescence is an efficient optical heat-pump that operates in comparably low temperatures. Here we theoretically and experimentally demonstrate such a thermally enhanced photoluminescence based solar-energy converter. Here heat is harvested by a low bandgap photoluminescent absorber that emits thermally enhanced photoluminescence towards a higher bandgap photovoltaic cell, resulting in a maximum theoretical efficiency of 70% at a temperature of 1,140 K. We experimentally demonstrate the key feature of sub-bandgap photon thermal upconversion with an efficiency of 1.4% at only 600 K. Experiments on white light excitation of a tailored Cr:Nd:Yb glass absorber suggest that conversion efficiencies as high as 48% at 1,500 K are in reach. PMID:27762271

Simultaneous monitoring the real and imaginary parts of the analyte refractive index using liquid-core photonic bandgap Bragg fibers.

PubMed

Li, Jingwen; Qu, Hang; Skorobogatiy, Maksim

2015-09-07

We demonstrate simultaneous monitoring of the real and imaginary parts of the liquid analyte refractive index by using a hollow-core Bragg fiber. We apply this two-channel fiber sensor to monitor concentrations of various commercial cooling oils. The sensor operates using spectral monitoring of the fiber bandgap center wavelength, as well as monitoring of the fiber transmission amplitude at mid-bandgap position. The sensitivity of the fiber sensor to changes in the real part of the core refractive index is found to be 1460nm/Refractive index unit (RIU). By using spectral modality and effective medium theory, we determine the concentrations of the two commercial fluids from the measured refractive indices with an accuracy of ~0.57% for both low- and high-loss oils. Moreover, using an amplitude-based detection modality allows determination of the oil concentration with accuracy of ~1.64% for low-loss oils and ~2.81% for the high-loss oils.

Electrically Tunable Optical Delay Lines

DTIC Science & Technology

2003-04-01

layers [24]. References [1] Bendickson, J. M., J. P. Dowling, and M. Scalora , “Analytic expressions for the electromagnetic mode density in...finite, one-dimensional, photonic band-gap structures,” Phys. Rev. E 53, 4107 (1996). [2] Scalora , M., R. J. Flynn, S. B. Reinhardt, R. L. Fork, M. J

Differential comparator cirucit

DOEpatents

Hickling, Ronald M.

1996-01-01

A differential comparator circuit for an Analog-to-Digital Converter (ADC) or other application includes a plurality of differential comparators and a plurality of offset voltage generators. Each comparator includes first and second differentially connected transistor pairs having equal and opposite voltage offsets. First and second offset control transistors are connected in series with the transistor pairs respectively. The offset voltage generators generate offset voltages corresponding to reference voltages which are compared with a differential input voltage by the comparators. Each offset voltage is applied to the offset control transistors of at least one comparator to set the overall voltage offset of the comparator to a value corresponding to the respective reference voltage. The number of offset voltage generators required in an ADC application can be reduced by a factor of approximately two by applying the offset voltage from each offset voltage generator to two comparators with opposite logical sense such that positive and negative offset voltages are produced by each offset voltage generator.

The simulation on diode-clamped five-level converters common-mode voltage suppression with zero-vector PWM strategy

NASA Astrophysics Data System (ADS)

Zhang, Yonggao; Gao, Yanli; Long, Lizhong

2012-04-01

More and more researchers have great concern on the issue of Common-mode voltage (CMV) in high voltage large power converter. A novel common-mode voltage suppression scheme based on zero-vector PWM strategy (ZVPWM) is present in this paper. Taking a diode-clamped five-level converter as example, the principle of zero vector PWM common-mode voltage (ZCMVPWM) suppression method is studied in detail. ZCMVPWM suppression strategy is including four important parts, which are locating the sector of reference voltage vector, locating the small triangular sub-sector of reference voltage vector, reference vector synthesis, and calculating the operating time of vector. The principles of four important pars are illustrated in detail and the corresponding MATLAB models are established. System simulation and experimental results are provided. It gives some consultation value for the development and research of multi-level converters.

Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current

NASA Astrophysics Data System (ADS)

Shoute, Gem; Afshar, Amir; Muneshwar, Triratna; Cadien, Kenneth; Barlage, Douglas

2016-02-01

Wide-bandgap, metal-oxide thin-film transistors have been limited to low-power, n-type electronic applications because of the unipolar nature of these devices. Variations from the n-type field-effect transistor architecture have not been widely investigated as a result of the lack of available p-type wide-bandgap inorganic semiconductors. Here, we present a wide-bandgap metal-oxide n-type semiconductor that is able to sustain a strong p-type inversion layer using a high-dielectric-constant barrier dielectric when sourced with a heterogeneous p-type material. A demonstration of the utility of the inversion layer was also investigated and utilized as the controlling element in a unique tunnelling junction transistor. The resulting electrical performance of this prototype device exhibited among the highest reported current, power and transconductance densities. Further utilization of the p-type inversion layer is critical to unlocking the previously unexplored capability of metal-oxide thin-film transistors, such applications with next-generation display switches, sensors, radio frequency circuits and power converters.

Lasing in a three-dimensional photonic crystal of the liquid crystal blue phase II.

PubMed

Cao, Wenyi; Muñoz, Antonio; Palffy-Muhoray, Peter; Taheri, Bahman

2002-10-01

Photonic-bandgap materials, with periodicity in one, two or three dimensions, offer control of spontaneous emission and photon localization. Low-threshold lasing has been demonstrated in two-dimensional photonic-bandgap materials, both with distributed feedback and defect modes. Liquid crystals with chiral constituents exhibit mesophases with modulated ground states. Helical cholesterics are one-dimensional, whereas blue phases are three-dimensional self-assembled photonic-bandgap structures. Although mirrorless lasing was predicted and observed in one-dimensional helical cholesteric materials and chiral ferroelectric smectic materials, it is of great interest to probe light confinement in three dimensions. Here, we report the first observations of lasing in three-dimensional photonic crystals, in the cholesteric blue phase II. Our results show that distributed feedback is realized in three dimensions, resulting in almost diffraction-limited lasing with significantly lower thresholds than in one dimension. In addition to mirrorless lasing, these self-assembled soft photonic-bandgap materials may also be useful for waveguiding, switching and sensing applications.

ZnO nanowire-based light-emitting diodes with tunable emission from near-UV to blue

NASA Astrophysics Data System (ADS)

Pauporté, Thierry; Lupan, Oleg; Viana, Bruno; le Bahers, T.

2013-03-01

Nanowires (NWs)-based light emitting diodes (LEDs) have drawn large interest due to many advantages compared to thin film based devices. We have successfully prepared epitaxial n-ZnO(NW)/p-GaN heterojunctions using low temperature soft electrochemical techniques. The structures have been used in LED devices and exhibited highly interesting performances. Moreover, the bandgap of ZnO has been tuned by Cu or Cd doping at controlled atomic concentration. A result was the controlled shift of the LED emission in the visible spectral wavelength region. Using DFT computing calculations, we have also shown that the bandgap narrowing has two different origins for Zn1-xCdxO (ZnO:Cd) and ZnO:Cu. In the first case, it is due to the crystal lattice expansion, whereas in the second case Cu-3d donor and Cu-3d combined to O-2p acceptor bands appear in the bandgap which broadnesses increase with the dopant concentration. This leads to the bandgap reduction.

Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics.

PubMed

Ghetmiri, Seyed Amir; Zhou, Yiyin; Margetis, Joe; Al-Kabi, Sattar; Dou, Wei; Mosleh, Aboozar; Du, Wei; Kuchuk, Andrian; Liu, Jifeng; Sun, Greg; Soref, Richard A; Tolle, John; Naseem, Hameed A; Li, Baohua; Mortazavi, Mansour; Yu, Shui-Qing

2017-02-01

A SiGeSn/GeSn/SiGeSn single quantum well structure was grown using an industry standard chemical vapor deposition reactor with low-cost commercially available precursors. The material characterization revealed the precisely controlled material growth process. Temperature-dependent photoluminescence spectra were correlated with band structure calculation for a structure accurately determined by high-resolution x-ray diffraction and transmission electron microscopy. Based on the result, a systematic study of SiGeSn and GeSn bandgap energy separation and barrier heights versus material compositions and strain was conducted, leading to a practical design of a type-I direct bandgap quantum well.

Integration of hybrid silicon lasers and electroabsorption modulators.

PubMed

Sysak, Matthew N; Anthes, Joel O; Bowers, John E; Raday, Omri; Jones, Richard

2008-08-18

We present an integration platform based on quantum well intermixing for multi-section hybrid silicon lasers and electroabsorption modulators. As a demonstration of the technology, we have fabricated discrete sampled grating DBR lasers and sampled grating DBR lasers integrated with InGaAsP/InP electroabsorption modulators. The integrated sampled grating DBR laser-modulators use the as-grown III-V bandgap for optical gain, a 50 nm blue shifted bandgap for the electrabosprtion modulators, and an 80 nm blue shifted bandgap for low loss mirrors. Laser continuous wave operation up to 45 ?C is achieved with output power >1.0 mW and threshold current of <50 mA. The modulator bandwidth is >2GHz with 5 dB DC extinction.

High Thermoelectric Power Factor of a Diketopyrrolopyrrole-Based Low Bandgap Polymer via Finely Tuned Doping Engineering

PubMed Central

Jung, In Hwan; Hong, Cheon Taek; Lee, Un-Hak; Kang, Young Hun; Jang, Kwang-Suk; Cho, Song Yun

2017-01-01

We studied the thermoelectric properties of a diketopyrrolopyrrole-based semiconductor (PDPP3T) via a precisely tuned doping process using Iron (III) chloride. In particular, the doping states of PDPP3T film were linearly controlled depending on the dopant concentration. The outstanding Seebeck coefficient of PDPP3T assisted the excellent power factors (PFs) over 200 μW m−1K−2 at the broad range of doping concentration (3–8 mM) and the maximum PF reached up to 276 μW m−1K−2, which is much higher than that of poly(3-hexylthiophene), 56 μW m−1K−2. The high-mobility of PDPP3T was beneficial to enhance the electrical conductivity and the low level of total dopant volume was important to maintain high Seebeck coefficients. In addition, the low bandgap PDPP3T polymer effiectively shifted its absorption into near infra-red area and became more colorless after doping, which is great advantage to realize transparent electronic devices. Our results give importance guidance to develop thermoelectric semiconducting polymers and we suggest that the use of low bandgap and high-mobility polymers, and the accurate control of the doping levels are key factors for obtaining the high thermoelectric PF. PMID:28317929

Sub-bandgap response of graphene/SiC Schottky emitter bipolar phototransistor examined by scanning photocurrent microscopy

NASA Astrophysics Data System (ADS)

Barker, Bobby G., Jr.; Chava, Venkata Surya N.; Daniels, Kevin M.; Chandrashekhar, M. V. S.; Greytak, Andrew B.

2018-01-01

Graphene layers grown epitaxially on SiC substrates are attractive for a variety of sensing and optoelectronic applications because the graphene acts as a transparent, conductive, and chemically responsive layer that is mated to a wide-bandgap semiconductor with large breakdown voltage. Recent advances in control of epitaxial growth and doping of SiC epilayers have increased the range of electronic device architectures that are accessible with this system. In particular, a recently-introduced Schottky-emitter bipolar phototransistor (SEPT) based on an epitaxial graphene (EG) emitter grown on a p-SiC base epilayer has been found to exhibit a maximum common emitter current gain of 113 and a UV responsivity of 7.1 A W-1. The behavior of this device, formed on an n +-SiC substrate that serves as the collector, was attributed to a very large minority carrier injection efficiency at the EG/p-SiC Schottky contact. This large minority carrier injection efficiency is in turn related to the large built-in potential found at a EG/p-SiC Schottky junction. The high performance of this device makes it critically important to analyze the sub bandgap visible response of the device, which provides information on impurity states and polytype inclusions in the crystal. Here, we employ scanning photocurrent microscopy (SPCM) with sub-bandgap light as well as a variety of other techniques to clearly demonstrate a localized response based on the graphene transparent electrode and an approximately 1000-fold difference in responsivity between 365 nm and 444 nm excitation. A stacking fault propagating from the substrate/epilayer interface, assigned as a single layer of the 8H-SiC polytype within the 4H-SiC matrix, is found to locally increase the photocurrent substantially. The discovery of this polytype heterojunction opens the potential for further development of heteropolytype devices based on the SEPT architecture.

Dual-mode MOS SOI nanoscale transistor serving as a building block for optical communication between blocks

NASA Astrophysics Data System (ADS)

Bendayan, Michael; Sabo, Roi; Zolberg, Roee; Mandelbaum, Yaakov; Chelly, Avraham; Karsenty, Avi

2017-02-01

We developed a new type of silicon MOSFET Quantum Well transistor, coupling both electronic and optical properties which should overcome the indirect silicon bandgap constraint, and serve as a future light emitting device in the range 0.8-2μm, as part of a new building block in integrated circuits allowing ultra-high speed processors. Such Quantum Well structure enables discrete energy levels for light recombination. Model and simulations of both optical and electric properties are presented pointing out the influence of the channel thickness and the drain voltage on the optical emission spectrum.

Superstructures and multijunction cells for high efficiency energy conversion

NASA Technical Reports Server (NTRS)

Wagner, M.; Leburton, J. P.

1985-01-01

Potential applications of superlattices to photovoltaic structures are discussed. A single-bandgap, multijunction cell with selective electrodes for lateral transport of collected carriers is proposed. The concept is based on similar doping superlattice (NIPI) structures. Computer simulations show that by reducing bulk recombination losses, the spectral response of such cells is enhanced, particularly for poor quality materials with short diffusion lengths. Dark current contributions of additional junctions result in a trade-off between short-circuit current and open-circuit voltage as the number of layers is increased. One or two extra junctions appear to be optimal.

Semi-transparent perovskite solar cells for tandems with silicon and CIGS

DOE PAGES

Bailie, Colin D.; Christoforo, M. Greyson; Mailoa, Jonathan P.; ...

2014-12-23

A promising approach for upgrading the performance of an established low-bandgap solar technology without adding much cost is to deposit a high bandgap polycrystalline semiconductor on top to make a tandem solar cell. We use a transparent silver nanowire electrode on perovskite solar cells to achieve a semi-transparent device. We place the semi-transparent cell in a mechanically-stacked tandem configuration onto copper indium gallium diselenide (CIGS) and low-quality multicrystalline silicon (Si) to achieve solid-state polycrystalline tandem solar cells with a net improvement in efficiency over the bottom cell alone. Furthermore, this work paves the way for integrating perovskites into a low-costmore » and high-efficiency (>25%) tandem cell.« less

Electronic voltage and current transformers testing device.

PubMed

Pan, Feng; Chen, Ruimin; Xiao, Yong; Sun, Weiming

2012-01-01

A method for testing electronic instrument transformers is described, including electronic voltage and current transformers (EVTs, ECTs) with both analog and digital outputs. A testing device prototype is developed. It is based on digital signal processing of the signals that are measured at the secondary outputs of the tested transformer and the reference transformer when the same excitation signal is fed to their primaries. The test that estimates the performance of the prototype has been carried out at the National Centre for High Voltage Measurement and the prototype is approved for testing transformers with precision class up to 0.2 at the industrial frequency (50 Hz or 60 Hz). The device is suitable for on-site testing due to its high accuracy, simple structure and low-cost hardware.

High-Pressure Single-Crystal Structures of 3D Lead-Halide Hybrid Perovskites and Pressure Effects on their Electronic and Optical Properties.

PubMed

Jaffe, Adam; Lin, Yu; Beavers, Christine M; Voss, Johannes; Mao, Wendy L; Karunadasa, Hemamala I

2016-04-27

We report the first high-pressure single-crystal structures of hybrid perovskites. The crystalline semiconductors (MA)PbX3 (MA = CH3NH3 (+), X = Br(-) or I(-)) afford us the rare opportunity of understanding how compression modulates their structures and thereby their optoelectronic properties. Using atomic coordinates obtained from high-pressure single-crystal X-ray diffraction we track the perovskites' precise structural evolution upon compression. These structural changes correlate well with pressure-dependent single-crystal photoluminescence (PL) spectra and high-pressure bandgaps derived from density functional theory. We further observe dramatic piezochromism where the solids become lighter in color and then transition to opaque black with compression. Indeed, electronic conductivity measurements of (MA)PbI3 obtained within a diamond-anvil cell show that the material's resistivity decreases by 3 orders of magnitude between 0 and 51 GPa. The activation energy for conduction at 51 GPa is only 13.2(3) meV, suggesting that the perovskite is approaching a metallic state. Furthermore, the pressure response of mixed-halide perovskites shows new luminescent states that emerge at elevated pressures. We recently reported that the perovskites (MA)Pb(Br x I1-x )3 (0.2 < x < 1) reversibly form light-induced trap states, which pin their PL to a low energy. This may explain the low voltages obtained from solar cells employing these absorbers. Our high-pressure PL data indicate that compression can mitigate this PL redshift and may afford higher steady-state voltages from these absorbers. These studies show that pressure can significantly alter the transport and thermodynamic properties of these technologically important semiconductors.

High-Pressure Single-Crystal Structures of 3D Lead-Halide Hybrid Perovskites and Pressure Effects on their Electronic and Optical Properties

PubMed Central

2016-01-01

We report the first high-pressure single-crystal structures of hybrid perovskites. The crystalline semiconductors (MA)PbX3 (MA = CH3NH3+, X = Br– or I–) afford us the rare opportunity of understanding how compression modulates their structures and thereby their optoelectronic properties. Using atomic coordinates obtained from high-pressure single-crystal X-ray diffraction we track the perovskites’ precise structural evolution upon compression. These structural changes correlate well with pressure-dependent single-crystal photoluminescence (PL) spectra and high-pressure bandgaps derived from density functional theory. We further observe dramatic piezochromism where the solids become lighter in color and then transition to opaque black with compression. Indeed, electronic conductivity measurements of (MA)PbI3 obtained within a diamond-anvil cell show that the material’s resistivity decreases by 3 orders of magnitude between 0 and 51 GPa. The activation energy for conduction at 51 GPa is only 13.2(3) meV, suggesting that the perovskite is approaching a metallic state. Furthermore, the pressure response of mixed-halide perovskites shows new luminescent states that emerge at elevated pressures. We recently reported that the perovskites (MA)Pb(BrxI1–x)3 (0.2 < x < 1) reversibly form light-induced trap states, which pin their PL to a low energy. This may explain the low voltages obtained from solar cells employing these absorbers. Our high-pressure PL data indicate that compression can mitigate this PL redshift and may afford higher steady-state voltages from these absorbers. These studies show that pressure can significantly alter the transport and thermodynamic properties of these technologically important semiconductors. PMID:27163050

High-pressure single-crystal structures of 3D lead-halide hybrid perovskites and pressure effects on their electronic and optical properties

DOE PAGES

Jaffe, Adam; Lin, Yu; Beavers, Christine M.; ...

2016-04-06

Here, we report the first high-pressure single-crystal structures of hybrid perovskites. The crystalline semiconductors (MA)PbX 3 (MA = CH 3NH 3 +, X = Br – or I –) afford us the rare opportunity of understanding how compression modulates their structures and thereby their optoelectronic properties. Using atomic coordinates obtained from high-pressure single-crystal X-ray diffraction we track the perovskites’ precise structural evolution upon compression. These structural changes correlate well with pressure-dependent single-crystal photoluminescence (PL) spectra and high-pressure bandgaps derived from density functional theory. We further observe dramatic piezochromism where the solids become lighter in color and then transition to opaquemore » black with compression. Indeed, electronic conductivity measurements of (MA)PbI 3 obtained within a diamond-anvil cell show that the material’s resistivity decreases by 3 orders of magnitude between 0 and 51 GPa. The activation energy for conduction at 51 GPa is only 13.2(3) meV, suggesting that the perovskite is approaching a metallic state. Furthermore, the pressure response of mixed-halide perovskites shows new luminescent states that emerge at elevated pressures. We recently reported that the perovskites (MA)Pb(Br xI 1–x) 3 (0.2 < x < 1) reversibly form light-induced trap states, which pin their PL to a low energy. This may explain the low voltages obtained from solar cells employing these absorbers. Our high-pressure PL data indicate that compression can mitigate this PL redshift and may afford higher steady-state voltages from these absorbers. These studies show that pressure can significantly alter the transport and thermodynamic properties of these technologically important semiconductors.« less

Dynamic Scattering Mode LCDs

NASA Astrophysics Data System (ADS)

Bahadur, Birendra

The following sections are included: * INTRODUCTION * CELL DESIGNING * EXPERIMENTAL OBSERVATIONS IN NEMATICS RELATED WITH DYNAMIC SCATTERING * Experimental Observations at D.C. Field and Electrode Effects * Experimental Observation at Low Frequency A.C. Fields * Homogeneously Aligned Nematic Regime * Williams Domains * Dynamic Scattering * Experimental Observation at High Frequency A.C. Field * Other Experimental Observations * THEORETICAL INTERPRETATIONS * Felici Model * Carr-Helfrich Model * D.C. Excitation * Dubois-Violette, de Gennes and Parodi Model * Low Freqency or Conductive Regime * High Frequency or Dielectric Regime * DYNAMIC SCATTERING IN SMECRIC A PHASE * ELECTRO-OPTICAL CHARACTERISTICS AND LIMITATIONS * Contrast Ratio vs. Voltage, Viewing Angle, Cell Gap, Wavelength and Temperature * Display Current vs. Voltage, Cell Gap and Temperature * Switching Time * Effect of Alignment * Effect of Conductivity, Temperature and Frequency * Addressing of DSM LCDs * Limitations of DSM LCDs * ACKNOWLEDGEMENTS * REFERENCES

Progress in Tandem Solar Cells Based on Hybrid Organic-Inorganic Perovskites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Bo; Zheng, Xiaopeng; Bai, Yang

Owing to their high efficiency, low-cost solution-processability, and tunable bandgap, perovskite solar cells (PSCs) made of hybrid organic-inorganic perovskite (HOIP) thin films are promising top-cell candidates for integration with bottom-cells based on Si or other low-bandgap solar-cell materials to boost the power conversion efficiency (PCE) beyond the Shockley-Quiesser (S-Q) limit. In this review, recent progress in such tandem solar cells based on the emerging PSCs is summarized and reviewed critically. Notable achievements for different tandem solar cell configurations including mechanically-stacked, optical coupling, and monolithically-integrated with PSCs as top-cells are described in detail. Highly-efficient semitransparent PSC top-cells with high transmittance inmore » near-infrared (NIR) region are critical for tandem solar cells. Different types of transparent electrodes with high transmittance and low sheet-resistance for PSCs are reviewed, which presents a grand challenge for PSCs. The strategies to obtain wide-bandgap PSCs with good photo-stability are discussed. In conclusion, the PCE reduction due to reflection loss, parasitic absorption, electrical loss, and current mismatch are analyzed to provide better understanding of the performance of PSC-based tandem solar cells.« less

Progress in Tandem Solar Cells Based on Hybrid Organic-Inorganic Perovskites

DOE PAGES

Chen, Bo; Zheng, Xiaopeng; Bai, Yang; ...

2017-03-06

Owing to their high efficiency, low-cost solution-processability, and tunable bandgap, perovskite solar cells (PSCs) made of hybrid organic-inorganic perovskite (HOIP) thin films are promising top-cell candidates for integration with bottom-cells based on Si or other low-bandgap solar-cell materials to boost the power conversion efficiency (PCE) beyond the Shockley-Quiesser (S-Q) limit. In this review, recent progress in such tandem solar cells based on the emerging PSCs is summarized and reviewed critically. Notable achievements for different tandem solar cell configurations including mechanically-stacked, optical coupling, and monolithically-integrated with PSCs as top-cells are described in detail. Highly-efficient semitransparent PSC top-cells with high transmittance inmore » near-infrared (NIR) region are critical for tandem solar cells. Different types of transparent electrodes with high transmittance and low sheet-resistance for PSCs are reviewed, which presents a grand challenge for PSCs. The strategies to obtain wide-bandgap PSCs with good photo-stability are discussed. In conclusion, the PCE reduction due to reflection loss, parasitic absorption, electrical loss, and current mismatch are analyzed to provide better understanding of the performance of PSC-based tandem solar cells.« less

Influence of carrier concentration on the performance of CIAS solar cell

NASA Astrophysics Data System (ADS)

Patel, Kinjal; Ray, Jaymin

2018-05-01

Photovoltaic research has moved beyond the use of single crystalline materials such as Group IV elemental Si and Group III-V compounds like GaAs to much more complex compounds of the Group I-III-VI2 with chalcopyrite structure. The ternary ABC2 chalcopyrites (A=Cu; B=In, Ga or Al; C= S, Se or Te) form a large group of semiconducting materials with diverse structural and electrical properties. These materials are attractive for thin film photovoltaic application for a number of reasons. The bandgap of CuInSe2 is relatively low, 1.04 eV, but it can be adjusted to better match the solar spectrum either by substituting part of In by Ga or part of Se by S. Most reported and popular Cu(In,Ga)Se2 (CIGS) is one of its derivative. Efficiency of the CIGS devices with Eg >1.3 eV is reduced by the degradation of the electronic properties of the absorber leading to losses in the fill-factor and the open-circuit voltage. Alternatively, the performance can be improved by the addition of Al to form CuInAlSe2 (CIAS) absorber layers with an increase in the bandgap energy, which matches closely with the solar spectrum. In the present work an effort was made in the direction of improving the conversion efficiency by studying the influence of carrier concentration. SCAPS simulation program is used to simulate the CIAS structure numerically. The obtained results intended the significant variation in the values of conversion efficiency. Variation in the efficiency can be considered because of the relation optical absorption and carrier concentration. Observed highest efficiency is 10 %, which can be further improved by considering actual parameters of the device as well as the operating condition.

First-principle simulations of electronic structure in semicrystalline polyethylene

NASA Astrophysics Data System (ADS)

Moyassari, A.; Unge, M.; Hedenqvist, M. S.; Gedde, U. W.; Nilsson, F.

2017-05-01

In order to increase our fundamental knowledge about high-voltage cable insulation materials, realistic polyethylene (PE) structures, generated with a novel molecular modeling strategy, have been analyzed using first principle electronic structure simulations. The PE structures were constructed by first generating atomistic PE configurations with an off-lattice Monte Carlo method and then equilibrating the structures at the desired temperature and pressure using molecular dynamics simulations. Semicrystalline, fully crystalline and fully amorphous PE, in some cases including crosslinks and short-chain branches, were analyzed. The modeled PE had a structure in agreement with established experimental data. Linear-scaling density functional theory (LS-DFT) was used to examine the electronic structure (e.g., spatial distribution of molecular orbitals, bandgaps and mobility edges) on all the materials, whereas conventional DFT was used to validate the LS-DFT results on small systems. When hybrid functionals were used, the simulated bandgaps were close to the experimental values. The localization of valence and conduction band states was demonstrated. The localized states in the conduction band were primarily found in the free volume (result of gauche conformations) present in the amorphous regions. For branched and crosslinked structures, the localized electronic states closest to the valence band edge were positioned at branches and crosslinks, respectively. At 0 K, the activation energy for transport was lower for holes than for electrons. However, at room temperature, the effective activation energy was very low (˜0.1 eV) for both holes and electrons, which indicates that the mobility will be relatively high even below the mobility edges and suggests that charge carriers can be hot carriers above the mobility edges in the presence of a high electrical field.

InGaAs-based planar barrier diode as microwave rectifier

NASA Astrophysics Data System (ADS)

Farhani Zakaria, Nor; Rizal Kasjoo, Shahrir; Zailan, Zarimawaty; Mohamad Isa, Muammar; Arshad, Mohd Khairuddin Md; Taking, Sanna

2018-06-01

In this report, we proposed and simulated a new planar nonlinear rectifying device fabricated using InGaAs substrate and referred to as a planar barrier diode (PBD). Using an asymmetrical inverse-arrowhead-shaped structure between the electrodes, a nonuniform depletion region is developed, which creates a triangular energy barrier in the conducting channel. This barrier is voltage dependent and can be controlled by the applied voltage across the PBD, thus resulting in nonlinear diode-like current–voltage characteristics; thus it can be used as a rectifying device. The PBD’s working principle is explained using thermionic emission theory. Furthermore, by varying the PBD’s geometric design, the asymmetry of the current–voltage characteristics can be optimized to realize superior rectification performance. By employing the optimized structural parameters, the obtained cut-off frequency of the device was approximately 270 GHz with a curvature coefficient peak of 14 V‑1 at a low DC bias voltage of 50 mV.

Novel Photovoltaic Devices Using Ferroelectric Material and Colloidal Quantum Dots

NASA Astrophysics Data System (ADS)

Paik, Young Hun

As the global concern for the financial and environmental costs of traditional energy resources increases, research on renewable energy, most notably solar energy, has taken center stage. Many alternative photovoltaic (PV) technologies for 'the next generation solar cell' have been extensively studied to overcome the Shockley-Queisser 31% efficiency limit as well as tackle the efficiency vs. cost issues. This dissertation focuses on the novel photovoltaic mechanism for the next generation solar cells using two inorganic nanomaterials, nanocrystal quantum dots and ferroelectric nanoparticles. Lead zirconate titanate (PZT) materials are widely studied and easy to synthesize using solution based chemistry. One of the fascinating properties of the PZT material is a Bulk Photovoltaic effect (BPVE). This property has been spotlighted because it can produce very high open circuit voltage regardless of the electrical bandgap of the materials. However, the poor optical absorption of the PZT materials and the required high temperature to form the ferroelectric crystalline structure have been obstacles to fabricate efficient photovoltaic devices. Colloidal quantum dots also have fascinating optical and electrical properties such as tailored absorption spectrum, capability of the bandgap engineering due to the wide range of material selection and quantum confinement, and very efficient carrier dynamics called multiple exciton generations. In order to utilize these properties, many researchers have put numerous efforts in colloidal quantum dot photovoltaic research and there has been remarkable progress in the past decade. However, several drawbacks are still remaining to achieve highly efficient photovoltaic device. Traps created on the large surface area, low carrier mobility, and lower open circuit voltage while increasing the absorption of the solar spectrum is main issues of the nanocrystal based photovoltaic effect. To address these issues and to take the advantages of the two materials, this dissertation focused on material synthesis for low cost solution process for both materials, fabrication of various device structures and electrical/optical characterization to understand the underlying physics. We successfully demonstrated lead sulfide quantum dots (PbS QDs) and lead zirconate titanate nanoparticles (PZT NPs) in an aqueous solution and fabricated a photosensitive device. Solution based low-temperature process was used to fabricate a PbS QD and a PZT NP device. We exhibited a superior photoresponse and ferroelectric photovoltaic properties with the novel PZT NP device and studied the physics on domain wall effect and internal polarity effect. PZT NP was mainly investigated because PZT NP device is the first report as a photosensitive device with a successful property demonstration, as we know of. PZT's crystalline structure and the size of the nanocrystals were studied using X-ray diffraction and TEM (Transmission electron microscopy) respectively. We observed < 100 nm of PZT NPs and this result matched with DLS (dynamic light scattering) measurement. We fabricated ferroelectric devices using the PZT NPs for the various optical and electrical characterizations and verified ferroelectric properties including ferroelectric hysteresis loop. We also observed a typical ferroelectric photovoltaic effect from a PZT NP based device which was fabricated on an ITO substrate. We synthesized colloidal quantum dots (CQD) with the inexpensive soluble process. Fabricated PbS QD was used for the hybrid device with PZT thin films. J-V measured and the result shows superior open circuit voltage characteristics compared to conventional PbS QD PV devices, and resulting the improvement of the solar cell efficiency. This Ferroelectrics and Quantum Dots (FE-QDs) device also the first trial and the success as we know of.

Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors

NASA Astrophysics Data System (ADS)

Yao, Rihui; Zheng, Zeke; Xiong, Mei; Zhang, Xiaochen; Li, Xiaoqing; Ning, Honglong; Fang, Zhiqiang; Xie, Weiguang; Lu, Xubing; Peng, Junbiao

2018-03-01

In this work, low temperature fabrication of a sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors (TFTs) on polyimide substrates was investigated. The effects of Ar-pressure during the sputtering process and then especially the post-annealing treatments at low temperature (≤200 °C) for HfO2 on reducing the density of defects in the bulk and on the surface were systematically studied. X-ray reflectivity, UV-vis and X-ray photoelectron spectroscopy, and micro-wave photoconductivity decay measurements were carried out and indicated that the high quality of optimized HfO2 film and its high dielectric properties contributed to the low concentration of structural defects and shallow localized defects such as oxygen vacancies. As a result, the well-structured HfO2 gate dielectric exhibited a high density of 9.7 g/cm3, a high dielectric constant of 28.5, a wide optical bandgap of 4.75 eV, and relatively low leakage current. The corresponding flexible a-IGZO TFT on polyimide exhibited an optimal device performance with a saturation mobility of 10.3 cm2 V-1 s-1, an Ion/Ioff ratio of 4.3 × 107, a SS value of 0.28 V dec-1, and a threshold voltage (Vth) of 1.1 V, as well as favorable stability under NBS/PBS gate bias and bending stress.

Molecular beam epitaxy growth and characterization of two-six materials for visible semiconductor lasers

NASA Astrophysics Data System (ADS)

Zeng, Linfei

This thesis proposes the molecular beam epitaxy (MBE) growth and characterization of a new Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se based semiconductor materials system on InP substrates for visible light emitting diodes (LED) and lasers. The growth conditions for lattice-matched Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se layers with the desired bandgap have been established and optimized. A chemical etching technique to measure the defect density of Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se materials has been established. The accuracy of this method for revealing stacking faults and dislocations was verified by plan-view TEM. Using the techniques such as III-V buffer layer, Zn-irradiation, low-temperature growth, ZnCdSe interfacial layer and growth interruption to improve the quality of the interface of III-V and II-VI, the material quality of Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se has been improved dramatically. Defect density has been reduced from 10sp{10}\\ cmsp{-2} to {˜}5×10sp4\\ cmsp{-2}. The properties of this material system such as the quality and strain state in the epilayer, the dependence of bandgap on temperature, and the band offset have been studied by using double crystal x-ray diffraction, photoluminescence and capacitance voltage measurements. The ZnCdSe/ZnCdMgSe based quantum well (QW) structures have been grown and studied. Optically pumped lasing with emission range from red to blue has been obtained from ZnCdSe/ZnCdMgSe based separate-confinement single QW laser structures. The results demonstrate the potential for these materials as integrated full color display devices. Preliminary studies of the degradation behavior of ZnCdSe/ZnCdMgSe QW were performed. No dark line defects (DLDs) were observed during the degradation. A very strong room temperature differential negative resistance behavior was observed from Al/Znsb{0.61}Cdsb{0.39}Se/nsp+-InP devices, which is useful in millimeter-wave applications. We also found that these devices can be set to either in highly conductive or nonconductive state within a given probing voltage region, which can be used as nonvolatile memories.

High-temperature, gas-filled ceramic rectifiers, thyratrons, and voltage-reference tubes

NASA Technical Reports Server (NTRS)

Baum, E. A.

1969-01-01

Thyratron, capable of being operated as a rectifier and a voltage-reference tube, was constructed and tested for 1000 hours at temperatures to 800 degrees C. With current levels at 15 amps and peak voltages of 2000 volts and frequencies at 6000 cps, tube efficiency was greater than 97 percent.

Reduced interface recombination in Cu{sub 2}ZnSnS{sub 4} solar cells with atomic layer deposition Zn{sub 1−x}Sn{sub x}O{sub y} buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Platzer-Björkman, C.; Frisk, C.; Larsen, J. K.

2015-12-14

Cu{sub 2}ZnSnS{sub 4} (CZTS) solar cells typically include a CdS buffer layer in between the CZTS and ZnO front contact. For sulfide CZTS, with a bandgap around 1.5 eV, the band alignment between CZTS and CdS is not ideal (“cliff-like”), which enhances interface recombination. In this work, we show how a Zn{sub 1−x}Sn{sub x}O{sub y} (ZTO) buffer layer can replace CdS, resulting in improved open circuit voltages (V{sub oc}) for CZTS devices. The ZTO is deposited by atomic layer deposition (ALD), with a process previously developed for Cu(In,Ga)Se{sub 2} solar cells. By varying the ALD process temperature, the position of themore » conduction band minimum of the ZTO is varied in relation to that of CZTS. A ZTO process at 95 °C is found to give higher V{sub oc} and efficiency as compared with the CdS reference devices. For a ZTO process at 120 °C, where the conduction band alignment is expected to be the same as for CdS, the V{sub oc} and efficiency is similar to the CdS reference. Further increase in conduction band minimum by lowering the deposition temperature to 80 °C shows blocking of forward current and reduced fill factor, consistent with barrier formation at the junction. Temperature-dependent current voltage analysis gives an activation energy for recombination of 1.36 eV for the best ZTO device compared with 0.98 eV for CdS. We argue that the V{sub oc} of the best ZTO devices is limited by bulk recombination, in agreement with a room temperature photoluminescence peak at around 1.3 eV for both devices, while the CdS device is limited by interface recombination.« less

SU-C-201-03: Ionization Chamber Collection Efficiency in Pulsed Radiation Fields of High Pulse Dose

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gotz, M; Karsch, L; Pawelke, J

Purpose: To investigate the reduction of collection efficiency of ionization chambers (IC) by volume recombination and its correction in pulsed fields of very high pulse dose. Methods: Measurements of the collection efficiency of a plane-parallel advanced Markus IC (PTW 34045, 1mm electrode spacing, 300V nominal voltage) were obtained for collection voltages of 100V and 300V by irradiation with a pulsed electron beam (20MeV) of varied pulse dose up to approximately 600mGy (0.8nC liberated charge). A reference measurement was performed with a Faraday cup behind the chamber. It was calibrated for the liberated charge in the IC by a linear fitmore » of IC measurement to reference measurement at low pulse doses. The results were compared to the commonly used two voltage approximation (TVA) and to established theories for volume recombination, with and without considering a fraction of free electrons. In addition, an equation system describing the charge transport and reactions in the chamber was solved numerically. Results: At 100V collection voltage and moderate pulse doses the established theories accurately predict the observed collection efficiency, but at extreme pulse doses a fraction of free electrons needs to be considered. At 300V the observed collection efficiency deviates distinctly from that predicted by any of the established theories, even at low pulse doses. However, the numeric solution of the equation system is able to reproduce the measured collection efficiency across the entire dose range of both voltages with a single set of parameters. Conclusion: At high electric fields (3000V/cm here) the existing theoretical descriptions of collection efficiency, including the TVA, are inadequate to predict pulse dose dependency. Even at low pulse doses they might underestimate collection efficiency. The presented, more accurate numeric solution, which considers additional effects like electric shielding by the charges, might provide a valuable tool for future investigations. This project was funded by the German ministry of research and education (BMBF) under grant number: 03Z1N511 and by the state of Saxony under grant number: B 209.« less

Single-contact tunneling thermometry

DOEpatents

Maksymovych, Petro

2016-02-23

A single-contact tunneling thermometry circuit includes a tunnel junction formed between two objects. Junction temperature gradient information is determined based on a mathematical relationship between a target alternating voltage applied across the junction and the junction temperature gradient. Total voltage measured across the junction indicates the magnitude of the target alternating voltage. A thermal gradient is induced across the junction. A reference thermovoltage is measured when zero alternating voltage is applied across the junction. An increasing alternating voltage is applied while measuring a thermovoltage component and a DC rectification voltage component created by the applied alternating voltage. The target alternating voltage is reached when the thermovoltage is nullified or doubled by the DC rectification voltage depending on the sign of the reference thermovoltage. Thermoelectric current and current measurements may be utilized in place of the thermovoltage and voltage measurements. The system may be automated with a feedback loop.

Four-Terminal All-Perovskite Tandem Solar Cells Achieving Power Conversion Efficiencies Exceeding 23%

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Dewei; Wang, Changlei; Song, Zhaoning

We report on fabrication of 4-terminal all-perovskite tandem solar cells with power conversion efficiencies exceeding 23% by mechanically stacking semitransparent 1.75 eV wide-bandgap FA 0.8Cs 0.2Pb(I 0.7Br 0.3) 3 perovskite top cells with 1.25 eV low-bandgap (FASnI 3) 0.6(MAPbI 3) 0.4 bottom cells. The top cells use MoOx/ITO transparent electrodes and achieve transmittance up to 70% beyond 700 nm.

CONJUGATED POLYMERS AND POLYELECTROLYTES IN SOLAR PHOTOCONVERSION, Final Technical Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schanze, Kirk S

2014-08-05

This DOE-supported program investigated the fundamental properties of conjugated polyelectrolytes, with emphasis placed on studies of excited state energy transport, self-assembly into conjugated polyelectroyte (CPE) based films and colloids, and exciton transport and charge injection in CPE films constructed atop wide bandgap semiconductors. In the most recent grant period we have also extended efforts to examine the properties of low-bandgap donor-acceptor conjugated polyelectrolytes that feature strong visible light absorption and the ability to adsorb to metal-oxide interfaces.

Four-Terminal All-Perovskite Tandem Solar Cells Achieving Power Conversion Efficiencies Exceeding 23%

DOE PAGES

Zhao, Dewei; Wang, Changlei; Song, Zhaoning; ...

2018-01-04

We report on fabrication of 4-terminal all-perovskite tandem solar cells with power conversion efficiencies exceeding 23% by mechanically stacking semitransparent 1.75 eV wide-bandgap FA 0.8Cs 0.2Pb(I 0.7Br 0.3) 3 perovskite top cells with 1.25 eV low-bandgap (FASnI 3) 0.6(MAPbI 3) 0.4 bottom cells. The top cells use MoOx/ITO transparent electrodes and achieve transmittance up to 70% beyond 700 nm.

Low loss liquid crystal photonic bandgap fiber in the near-infrared region

NASA Astrophysics Data System (ADS)

Scolari, Lara; Wei, Lei; Gauza, Sebastian; Wu, Shin-Tson; Bjarklev, Anders

2011-01-01

We infiltrate a perdeuterated liquid crystal with a reduced infrared absorption in a photonic crystal fiber. The H atoms of this liquid crystal were substituted with D atoms in order to move the vibration bands which cause absorption loss to longer wavelengths and therefore reduce the absorption in the spectral range of 1-2 μm. We achieve in the middle of the near-infrared transmission bandgap the lowest loss (about 1 dB) ever reported for this kind of devices.

Synthesis, Morphological and Electrical Characterization of Solution Processable Low Bandgap Organic Materials

DTIC Science & Technology

2008-12-05

bandgap: 1.98 eV Okamoto, Toshihiro; Senatore, Michelle L.; Ling, Mang-Mang; Mallik , Abhijit B.; Tang, Ming L.; Bao, Zhenan. Synthesis...grant: 1. R.A.B. Devine, M.M. Ling, A. Mallik , M.Roberts, Z. Bao, "X-irradiation Effects on Top Contact, Pentacene Based Field Effect Transistors...Semiconductors: Asymmetric Linear Acenes Containing Sulphur ",J. Am. Chem. Soc., 128, 160002-160003,2006. 3. T. Okamoto, M.L. Senatore, M.M. Ling, A.B. Mallik

Hybrid organic-inorganic inks flatten the energy landscape in colloidal quantum dot solids.

PubMed

Liu, Mengxia; Voznyy, Oleksandr; Sabatini, Randy; García de Arquer, F Pelayo; Munir, Rahim; Balawi, Ahmed Hesham; Lan, Xinzheng; Fan, Fengjia; Walters, Grant; Kirmani, Ahmad R; Hoogland, Sjoerd; Laquai, Frédéric; Amassian, Aram; Sargent, Edward H

2017-02-01

Bandtail states in disordered semiconductor materials result in losses in open-circuit voltage (V oc ) and inhibit carrier transport in photovoltaics. For colloidal quantum dot (CQD) films that promise low-cost, large-area, air-stable photovoltaics, bandtails are determined by CQD synthetic polydispersity and inhomogeneous aggregation during the ligand-exchange process. Here we introduce a new method for the synthesis of solution-phase ligand-exchanged CQD inks that enable a flat energy landscape and an advantageously high packing density. In the solid state, these materials exhibit a sharper bandtail and reduced energy funnelling compared with the previous best CQD thin films for photovoltaics. Consequently, we demonstrate solar cells with higher V oc and more efficient charge injection into the electron acceptor, allowing the use of a closer-to-optimum bandgap to absorb more light. These enable the fabrication of CQD solar cells made via a solution-phase ligand exchange, with a certified power conversion efficiency of 11.28%. The devices are stable when stored in air, unencapsulated, for over 1,000 h.

Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions.

PubMed

Trommer, Jens; Heinzig, André; Mühle, Uwe; Löffler, Markus; Winzer, Annett; Jordan, Paul M; Beister, Jürgen; Baldauf, Tim; Geidel, Marion; Adolphi, Barbara; Zschech, Ehrenfried; Mikolajick, Thomas; Weber, Walter M

2017-02-28

Germanium is a promising material for future very large scale integration transistors, due to its superior hole mobility. However, germanium-based devices typically suffer from high reverse junction leakage due to the low band-gap energy of 0.66 eV and therefore are characterized by high static power dissipation. In this paper, we experimentally demonstrate a solution to suppress the off-state leakage in germanium nanowire Schottky barrier transistors. Thereto, a device layout with two independent gates is used to induce an additional energy barrier to the channel that blocks the undesired carrier type. In addition, the polarity of the same doping-free device can be dynamically switched between p- and n-type. The shown germanium nanowire approach is able to outperform previous polarity-controllable device concepts on other material systems in terms of threshold voltages and normalized on-currents. The dielectric and Schottky barrier interface properties of the device are analyzed in detail. Finite-element drift-diffusion simulations reveal that both leakage current suppression and polarity control can also be achieved at highly scaled geometries, providing solutions for future energy-efficient systems.

Direct conversion of light to radio frequency energy. [using photoklystrons for solar power satellites

NASA Technical Reports Server (NTRS)

Freeman, J. W.; Simons, S.

1981-01-01

A description is presented of the test results obtained with the latest models of the phototron. The phototron was conceived as a replacement for the high voltage solar cell-high power klystron combination for the solar power satellite concept. Physically, the phototron is a cylindrical evacuated glass tube with a photocathode, two grids, and a reflector electrode in a planar configuration. The phototron can be operated either in a biased mode where a low voltage is used to accelerate the electron beam produced by the photocathode or in an unbiased mode referred to as self-oscillation. The device is easily modulated by light input or voltage to broadcast in AM or FM. The range of operation of the present test model phototrons is from 2 to 200 MHz.

Electronic Voltage and Current Transformers Testing Device

PubMed Central

Pan, Feng; Chen, Ruimin; Xiao, Yong; Sun, Weiming

2012-01-01

A method for testing electronic instrument transformers is described, including electronic voltage and current transformers (EVTs, ECTs) with both analog and digital outputs. A testing device prototype is developed. It is based on digital signal processing of the signals that are measured at the secondary outputs of the tested transformer and the reference transformer when the same excitation signal is fed to their primaries. The test that estimates the performance of the prototype has been carried out at the National Centre for High Voltage Measurement and the prototype is approved for testing transformers with precision class up to 0.2 at the industrial frequency (50 Hz or 60 Hz). The device is suitable for on-site testing due to its high accuracy, simple structure and low-cost hardware. PMID:22368510

Space-coiling fractal metamaterial with multi-bandgaps on subwavelength scale

NASA Astrophysics Data System (ADS)

Man, Xianfeng; Liu, Tingting; Xia, Baizhan; Luo, Zhen; Xie, Longxiang; Liu, Jian

2018-06-01

Acoustic metamaterials are remarkably different from conventional materials, as they can flexibly manipulate and control the propagation of sound waves. Unlike the locally resonant metamaterials introduced in earlier studies, we designed an ultraslow artificial structure with a sound speed much lower than that in air. In this paper, the space-coiling approach is proposed for achieving artificial metamaterial for extremely low-frequency airborne sound. In addition, the self-similar fractal technique is utilized for designing space-coiling Mie-resonance-based metamaterials (MRMMs) to obtain a band-dispersive spectrum. The band structures of two-dimensional (2D) acoustic metamaterials with different fractal levels are illustrated using the finite element method. The low-frequency bandgap can easily be formed, and multi-bandgap properties are observed in high-level fractals. Furthermore, the designed MRMMs with higher order fractal space coiling shows a good robustness against irregular arrangement. Besides, the proposed artificial structure was found to modify and control the radiation field arbitrarily. Thus, this work provides useful guidelines for the design of acoustic filtering devices and acoustic wavefront shaping applications on the subwavelength scale.

Multi-resonant piezoelectric shunting induced by digital controllers for subwavelength elastic wave attenuation in smart metamaterial

NASA Astrophysics Data System (ADS)

Wang, Gang; Cheng, Jianqing; Chen, Jingwei; He, Yunze

2017-02-01

Instead of analog electronic circuits and components, digital controllers that are capable of active multi-resonant piezoelectric shunting are applied to elastic metamaterials integrated with piezoelectric patches. Thanks to recently introduced digital control techniques, shunting strategies are possible now with transfer functions that can hardly be realized with analog circuits. As an example, the ‘pole-zero’ method is developed to design single- or multi-resonant bandgaps by adjusting poles and zeros in the transfer function of piezoelectric shunting directly. Large simultaneous attenuations in up to three frequency bands at deep subwavelength scale (with normalized frequency as low as 0.077) are achieved. The underlying physical mechanism is attributable to the negative group velocity of the flexural wave within bandgaps. As digital controllers can be readily adapted via wireless broadcasting, the bandgaps can be tuned easily unlike the electric components in analog shunting circuits, which must be tuned one by one manually. The theoretical results are verified experimentally with the measured vibration transmission properties, where large insulations of up to 20 dB in low-frequency ranges are observed.

Low-bandgap double-heterostructure InAsP/GaInAs photovoltaic converters

DOEpatents

Wanlass, Mark W.

2001-01-01

A low-bandgap, double-heterostructure PV device is provided, including in optical alignment a first InP.sub.1-y As.sub.y n-layer formed with an n-type dopant, an Ga.sub.x In.sub.1-x As absorber layer, the absorber layer having an n-region formed with an n-type dopant and an p-region formed with a p-type dopant to form a single pn-junction, and a second InP.sub.1-y As.sub.y p-layer formed with a p-type dopant, wherein the first and second layers are used for passivation and minority carrier confinement of the absorber layers.

Defect-induced band-edge reconstruction of a bismuth-halide double perovskite for visible-light absorption

DOE PAGES

Slavney, Adam H.; Leppert, Linn; Bartesaghi, Davide; ...

2017-03-29

In this study, halide double perovskites have recently been developed as less toxic analogs of the lead perovskite solar-cell absorbers APbX 3 (A = monovalent cation; X = Br or I). However, all known halide double perovskites have large bandgaps that afford weak visible-light absorption. The first halide double perovskite evaluated as an absorber, Cs 2AgBiBr 6 (1), has a bandgap of 1.95 eV. Here, we show that dilute alloying decreases 1’s bandgap by ca. 0.5 eV. Importantly, time-resolved photoconductivity measurements reveal long-lived carriers with microsecond lifetimes in the alloyed material, which is very promising for photovoltaic applications. The alloyedmore » perovskite described herein is the first double perovskite to show comparable bandgap energy and carrier lifetime to those of (CH 3NH 3)PbI 3. By describing how energy- and symmetry-matched impurity orbitals, at low concentrations, dramatically alter 1’s band edges, we open a potential pathway for the large and diverse family of halide double perovskites to compete with APbX 3 absorbers.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Slavney, Adam H.; Leppert, Linn; Bartesaghi, Davide

In this study, halide double perovskites have recently been developed as less toxic analogs of the lead perovskite solar-cell absorbers APbX 3 (A = monovalent cation; X = Br or I). However, all known halide double perovskites have large bandgaps that afford weak visible-light absorption. The first halide double perovskite evaluated as an absorber, Cs 2AgBiBr 6 (1), has a bandgap of 1.95 eV. Here, we show that dilute alloying decreases 1’s bandgap by ca. 0.5 eV. Importantly, time-resolved photoconductivity measurements reveal long-lived carriers with microsecond lifetimes in the alloyed material, which is very promising for photovoltaic applications. The alloyedmore » perovskite described herein is the first double perovskite to show comparable bandgap energy and carrier lifetime to those of (CH 3NH 3)PbI 3. By describing how energy- and symmetry-matched impurity orbitals, at low concentrations, dramatically alter 1’s band edges, we open a potential pathway for the large and diverse family of halide double perovskites to compete with APbX 3 absorbers.« less

Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current

PubMed Central

Shoute, Gem; Afshar, Amir; Muneshwar, Triratna; Cadien, Kenneth; Barlage, Douglas

2016-01-01

Wide-bandgap, metal-oxide thin-film transistors have been limited to low-power, n-type electronic applications because of the unipolar nature of these devices. Variations from the n-type field-effect transistor architecture have not been widely investigated as a result of the lack of available p-type wide-bandgap inorganic semiconductors. Here, we present a wide-bandgap metal-oxide n-type semiconductor that is able to sustain a strong p-type inversion layer using a high-dielectric-constant barrier dielectric when sourced with a heterogeneous p-type material. A demonstration of the utility of the inversion layer was also investigated and utilized as the controlling element in a unique tunnelling junction transistor. The resulting electrical performance of this prototype device exhibited among the highest reported current, power and transconductance densities. Further utilization of the p-type inversion layer is critical to unlocking the previously unexplored capability of metal-oxide thin-film transistors, such applications with next-generation display switches, sensors, radio frequency circuits and power converters. PMID:26842997

Nondestructive atomic compositional analysis of BeMgZnO quaternary alloys using ion beam analytical techniques

NASA Astrophysics Data System (ADS)

Zolnai, Z.; Toporkov, M.; Volk, J.; Demchenko, D. O.; Okur, S.; Szabó, Z.; Özgür, Ü.; Morkoç, H.; Avrutin, V.; Kótai, E.

2015-02-01

The atomic composition with less than 1-2 atom% uncertainty was measured in ternary BeZnO and quaternary BeMgZnO alloys using a combination of nondestructive Rutherford backscattering spectrometry with 1 MeV He+ analyzing ion beam and non-Rutherford elastic backscattering experiments with 2.53 MeV energy protons. An enhancement factor of 60 in the cross-section of Be for protons has been achieved to monitor Be atomic concentrations. Usually the quantitative analysis of BeZnO and BeMgZnO systems is challenging due to difficulties with appropriate experimental tools for the detection of the light Be element with satisfactory accuracy. As it is shown, our applied ion beam technique, supported with the detailed simulation of ion stopping, backscattering, and detection processes allows of quantitative depth profiling and compositional analysis of wurtzite BeZnO/ZnO/sapphire and BeMgZnO/ZnO/sapphire layer structures with low uncertainty for both Be and Mg. In addition, the excitonic bandgaps of the layers were deduced from optical transmittance measurements. To augment the measured compositions and bandgaps of BeO and MgO co-alloyed ZnO layers, hybrid density functional bandgap calculations were performed with varying the Be and Mg contents. The theoretical vs. experimental bandgaps show linear correlation in the entire bandgap range studied from 3.26 eV to 4.62 eV. The analytical method employed should help facilitate bandgap engineering for potential applications, such as solar blind UV photodetectors and heterostructures for UV emitters and intersubband devices.

Electron Tunneling in Junctions Doped with Semiconductors and Metals.

NASA Astrophysics Data System (ADS)

Bell, Lloyd Douglas, II

In this study, tunnel junctions incorporating thin layers of semiconductors and metals have been analyzed. Inelastic electron tunneling spectroscopy (IETS) was employed to yield high-resolution vibrational spectra of surface species deposited at the oxide-M_2 interface of M_1-M_1O _{rm x}-M _2 tunneling samples. Analysis was also performed on the elastic component of the tunneling current, yielding information on the tunnel barrier shape. The samples in this research exhibit a wide range of behavior. The IETS for Si, SiO_2, and Ge doped samples show direct evidence of SiH _{rm x} and GeH_ {rm x} formation. The particular species formed is shown to depend on the form of the evaporated dopant. Samples were also made with organic dopants deposited over the evaporated dopants. Many such samples show marked effects of the evaporated dopants on the inelastic peak intensities of the organic dopants. These alterations are correlated with the changed reactivity of the oxide surface coupled with a change in the OH dipole layer density on the oxide. Thicker organic dopant layers cause large changes in the elastic tunneling barrier due to OH layer alterations or the low barrier attributes of the evaporated dopant. In the cases of the thicker layers an extra current-carrying mechanism is shown to be contributing. Electron ejection from charge traps is proposed as an explanation for this extra current. The trend of barrier shape with dopant thickness is examined. Many of these dopants also produce a voltage-induced shift in the barrier shape which is stable at low temperature but relaxes at high temperature. This effect is similar to that produced by certain organic dopants and is explained by metastable bond formation between the surface OH and dopant. Other dopants, such as Al, Mg, and Fe, produce different effects. These dopants cause large I-V nonlinearity at low voltages. This nonlinearity is modeled as a giant zero-bias anomaly (ZBA) and fits are presented which show good agreement with theory. For some samples, poor fits result due to additional nonlinearity at higher voltages. This is explained in terms of a barrier lowering due to disruption of the OH layer or the small bandgap of the dopant.

Transparent conducting ZnO-CdO mixed oxide thin films grown by the sol-gel method.

PubMed

Pathak, Trilok K; Rajput, Jeevitesh K; Kumar, Vinod; Purohit, L P; Swart, H C; Kroon, R E

2017-02-01

Mixed oxides of zinc and cadmium with different proportions were deposited on ordinary glass substrates using the sol-gel spin coating method under optimized deposition conditions using zinc acetate dihydrate and cadmium acetate dihydrate as precursors. X-ray diffraction patterns confirmed the polycrystalline nature of the films. A combination of cubic CdO and hexagonal wurtzite ZnO phases was observed. The oxidation states of Zn, Cd and O in the deposited films were determined by X-ray photoelectron spectroscopic studies. Surface morphology was studied by scanning electron microscopy and atomic force microscopy. The compositional analysis of the thin films was studied by secondary ion mass spectroscopy. The transmittance of the thin films was measured in the range 300-800nm and the optical bandgap was calculated using Tauc's plot method. The bandgap decreased from 3.15eV to 2.15eV with increasing CdO content. The light emission properties of the ZnO:CdO thin films were studied by photoluminescence spectra recorded at room temperature. The current-voltage characteristics were also assessed and showed ohmic behaviour. The resistance decreased with increasing CdO content. Copyright © 2016 Elsevier Inc. All rights reserved.

Analysis of the attainable efficiency of a direct-bandgap betavoltaic element

NASA Astrophysics Data System (ADS)

Sachenko, A. V.; Shkrebtii, A. I.; Korkishko, R. M.; Kostylyov, V. P.; Kulish, M. R.; Sokolovskyi, I. O.; Evstigneev, M.

2015-11-01

Conversion of energy of beta-particles into electric energy in a p-n junction based on direct-bandgap semiconductors, such as GaAs, is analyzed considering realistic semiconductor system parameters. An expression for the collection coefficient, Q, of the electron-hole pairs generated by beta-electrons is derived taking into account the existence of the dead layer. We show that the collection coefficient of beta-electrons emitted by a 3H-source to a GaAs p-n junction is close to 1 in a broad range of electron lifetimes in the junction, ranging from 10-9to 10-7 s. For the combination 147Pm/GaAs, Q is relatively large (≥slant 0.4) only for quite long lifetimes (about 10-7 s) and large thicknesses (about 100 μm) of GaAs p-n junctions. For realistic lifetimes of minority carriers and their diffusion coefficients, the open-circuit voltage realized due to the irradiation of a GaAs p-n junction by beta-particles is obtained. The attainable beta-conversion efficiency η in the case of a 3H/GaAs combination is found to exceed that of the 147Pm/GaAs combination.

Probing the density of trap states in the middle of the bandgap using ambipolar organic field-effect transistors

NASA Astrophysics Data System (ADS)

Häusermann, Roger; Chauvin, Sophie; Facchetti, Antonio; Chen, Zhihua; Takeya, Jun; Batlogg, Bertram

2018-04-01

The number of trap states in the band gap of organic semiconductors directly influences the charge transport as well as the threshold and turn-on voltage. Direct charge transport measurements have been used until now to probe the trap states rather close to the transport level, whereas their number in the middle of the band gap has been elusive. In this study, we use PDIF-CN2, a well known n-type semiconductor, together with vanadium pentoxide electrodes to build ambipolar field-effect transistors. Employing three different methods, we study the density of trap states in the band gap of the semiconductor. These methods give consistent results, and no pool of defect states was found. Additionally, we show first evidence that the number of trap states close to the transport level is correlated with the number of traps in the middle of the band-gap, meaning that a high number of trap states close to the transport level also implies a high number of trap states in the middle of the band gap. This points to a common origin of the trap states over a wide energy range.

Potential Fluctuations and Localization Effects in CZTS Single Crystals, as Revealed by Optical Spectroscopy

NASA Astrophysics Data System (ADS)

Bleuse, Joël; Ducroquet, Frédérique; Mariette, Henri

2018-03-01

Reports on Cu_2 ZnSn(S_x Se_{1-x} )_4 (CZTSSe) solar cell devices all show an open-circuit voltage lower than expected, especially when compared to CuIn_x Ga_{1-x} (S,Se)_2 devices, which reduces their power efficiency and delays their development. A high concentration of intrinsic defects in CZTSSe, and their stabilization through neutral complex formation, which induces some local fluctuations, are at the origin of local energy shifts in the conduction and valence band edges. The implied band tail in Cu_2 ZnSnS_4 is studied in this work by combining three types of optical spectroscopy data: emission spectra compared to photoluminescence excitation spectroscopy, emission spectra as a function of excitation power, and time-resolved photoluminescence spectra. All these data converge to show that both the bandgap and the band tail of localized states just below are dependent on the degree of order/disorder in the Cu/Zn cation sublattice of the quaternary structure: in the more ordered structures, the bandgap increases by about 50 meV, and the energy range of the band tail is decreased from about 110 to 70 meV.

Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seif, Johannes Peter; Menda, Deneb; Descoeudres, Antoine

Here, amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use silicon suboxides as passivation layers -- inserted between substrate and (front or rear) contacts -- since such layers enable intentionally exacerbated band-offset asymmetry. Investigating all topologically possible passivation layer permutations and focussing on light and dark current-voltage characteristics, we confirm that to avoid fill factor losses, wider-bandgap silicon oxide films (of at least several nanometer thin) should be avoided in hole-collecting contacts. Asmore » a consequence, device implementation of such films as window layers -- without degraded carrier collection -- demands electron collection at the front and hole collection at the rear. Furthermore, at elevated operating temperatures, once possible carrier transport barriers are overcome by thermionic (field) emission, the device performance is mainly dictated by the passivation of its surfaces. In this context, compared to the standard amorphous silicon layers, the wide-bandgap oxide layers applied here passivate remarkably better at these temperatures, which may represent an additional benefit under practical operation conditions.« less

Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance

DOE PAGES

Seif, Johannes Peter; Menda, Deneb; Descoeudres, Antoine; ...

2016-08-01

Here, amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use silicon suboxides as passivation layers -- inserted between substrate and (front or rear) contacts -- since such layers enable intentionally exacerbated band-offset asymmetry. Investigating all topologically possible passivation layer permutations and focussing on light and dark current-voltage characteristics, we confirm that to avoid fill factor losses, wider-bandgap silicon oxide films (of at least several nanometer thin) should be avoided in hole-collecting contacts. Asmore » a consequence, device implementation of such films as window layers -- without degraded carrier collection -- demands electron collection at the front and hole collection at the rear. Furthermore, at elevated operating temperatures, once possible carrier transport barriers are overcome by thermionic (field) emission, the device performance is mainly dictated by the passivation of its surfaces. In this context, compared to the standard amorphous silicon layers, the wide-bandgap oxide layers applied here passivate remarkably better at these temperatures, which may represent an additional benefit under practical operation conditions.« less

Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seif, Johannes Peter, E-mail: johannes.seif@alumni.epfl.ch; Ballif, Christophe; De Wolf, Stefaan

Amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use silicon suboxides as passivation layers—inserted between substrate and (front or rear) contacts—since such layers enable intentionally exacerbated band-offset asymmetry. Investigating all topologically possible passivation layer permutations and focussing on light and dark current-voltage characteristics, we confirm that to avoid fill factor losses, wider-bandgap silicon oxide films (of at least several nanometer thin) should be avoided in hole-collecting contacts. As a consequence, device implementation ofmore » such films as window layers—without degraded carrier collection—demands electron collection at the front and hole collection at the rear. Furthermore, at elevated operating temperatures, once possible carrier transport barriers are overcome by thermionic (field) emission, the device performance is mainly dictated by the passivation of its surfaces. In this context, compared to the standard amorphous silicon layers, the wide-bandgap oxide layers applied here passivate remarkably better at these temperatures, which may represent an additional benefit under practical operation conditions.« less

Measurement of carrier transport and recombination parameter in heavily doped silicon

NASA Technical Reports Server (NTRS)

Swanson, Richard M.

1986-01-01

The minority carrier transport and recombination parameters in heavily doped bulk silicon were measured. Both Si:P and Si:B with bulk dopings from 10 to the 17th and 10 to the 20th power/cu cm were studied. It is shown that three parameters characterize transport in bulk heavily doped Si: the minority carrier lifetime tau, the minority carrier mobility mu, and the equilibrium minority carrier density of n sub 0 and p sub 0 (in p-type and n-type Si respectively.) However, dc current-voltage measurements can never measure all three of these parameters, and some ac or time-transient experiment is required to obtain the values of these parameters as a function of dopant density. Using both dc electrical measurements on bipolar transitors with heavily doped base regions and transients optical measurements on heavily doped bulk and epitaxially grown samples, lifetime, mobility, and bandgap narrowing were measured as a function of both p and n type dopant densities. Best fits of minority carrier mobility, bandgap narrowing and lifetime as a function of doping density (in the heavily doped range) were constructed to allow accurate modeling of minority carrier transport in heavily doped Si.

Voc Degradation in TF-VLS Grown InP Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Yubo; Sun, Xingshu; Johnston, Steve

2016-11-21

Here we consider two hypotheses to explain the open-circuit voltage (VOC) degradation observed in thin-film vapor-liquid-solid (TF-VLS) grown p-type InP photovoltaic cells: bandgap narrowing and local shunting. First, a bandgap (Eg) narrowing effect is hypothesized, based on the surface inhomogeneity of VLS InP captured by the photoluminescence (PL) image. The PL data was used to estimate a spatially-resolved active VOC across surface of the InP sample. Combining this data with the effective Jsc allowed an assessment of the I-V characteristics of individual unit cells. Next, an H-SPICE diode compact model was utilized to reproduce the I-V characteristics of the wholemore » sample. We find a good fit to the I-V performance of TF-VLS grown InP solar cell. Second, a local shunting effect was also considered as an alternative explanation of the VOC degradation effect. Again, PL image data was used, and small local shunt resistance was added in arbitrary elementary unit cells to represent certain dark spots seen in the PL image and dictate the VOC degradation occurred in the sample.« less

Analysis of Solar Cell Efficiency for Venus Atmosphere and Surface Missions

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.; Haag, Emily

2013-01-01

A simplified model of solar power in the Venus environment is developed, in which the solar intensity, solar spectrum, and temperature as a function of altitude is applied to a model of photovoltaic performance, incorporating the temperature and intensity dependence of the open-circuit voltage and the temperature dependence of the bandgap and spectral response of the cell. We use this model to estimate the performance of solar cells for both the surface of Venus and for atmospheric probes at altitudes from the surface up to 60 km. The model shows that photovoltaic cells will produce power even at the surface of Venus.

Actively tunable transverse waves in soft membrane-type acoustic metamaterials

NASA Astrophysics Data System (ADS)

Zhou, Weijian; Wu, Bin; Muhammad, Du, Qiujiao; Huang, Guoliang; Lü, Chaofeng; Chen, Weiqiu

2018-04-01

Membrane-type metamaterials have shown a fantastic capacity for manipulating acoustic waves in the low frequency range. They have the advantages of simple geometry, light weight, and active tunability. In general, these membrane-type metamaterials contain a rigid frame support, leading to a fixed configuration. However, in some instances, flexible and reconfigurable devices may be desirable. A soft membrane-type acoustic metamaterial that is highly flexible and controllable is designed here. Different from the previously designed membrane-type metamaterials, the stiff supporting frame is removed and the stiff mass at the center of each unit cell is replaced by the soft mass, realized by bonding fine metallic particles in the central region. In contrast to the previous studies, the propagation of elastic transverse waves in such a soft metamaterial is investigated by employing the plane wave expansion method. Both the Bragg scattering bandgaps and locally resonant bandgaps are found to coexist in the soft metamaterial. The influences of structural parameters and finite biaxial pre-stretch on the dynamic behavior of this soft metamaterial are carefully examined. It is shown that whether or not the wave propagation characteristics are sensitive to the finite deformation does not depend on the property and pre-stretch of the membrane. In addition, a broadband complete bandgap and a pseudo-gap formed by the combination of two extremely adjacent directional bandgaps are observed in the low-frequency range, and both can be controlled by the finite pre-stretch.

Composition and temperature dependent optical properties of AlxGa1-xN alloy by spectroscopic ellipsometry

NASA Astrophysics Data System (ADS)

Liu, Yao; Li, Qing Xuan; Wan, Ling Yu; Kucukgok, Bahadir; Ghafari, Ehsan; Ferguson, Ian T.; Zhang, Xiong; Wang, Shuchang; Feng, Zhe Chuan; Lu, Na

2017-11-01

A series of AlxGa1-xN/AlN/Sapphire films with x = 0.35-0.75 and different thickness of epi-layer were prepared by metalorganic chemical vapor deposition (MOCVD). Spectroscopic ellipsometry (SE) was used to study the temperature-dependent refractive indices and optical bandgaps of the AlxGa1-xN films ranging from 300 to 823 K. Parametric semiconductor (PSEMI) models were used to describe the dielectric functions of AlGaN/AlN layers. The fitting results of refractive index, energy bandgap, thickness and surface roughness at 300 K are in good agreement with photoluminescence (PL), scanning electron microscopy (SEM) measurements and the existing literature. Our finding indicates that the crystal quality of the samples with x = 0.47 and 0.60 are better than those with x = 0.35 and 0.75. As the temperature rises, the increasing of refractive index for the low Al content AlxGa1-xN layers is stronger than that of high Al content in the transparent region, and the reduction of bandgap with high Al content is larger than that of low Al content. For all the samples (x = 0.35-0.75), an analytical expression for temperature-dependent refractive index in the wavelength range of 195-1650 nm was obtained using the Sellmeier law, and the quantitative analysis of the SE-derived temperature-dependent bandgap was conducted by using the Bose-Einstein equation.

Low-Power Low-Noise Amplifier Using Attenuation-Adaptive Noise Control for Ultrasound Imaging Systems.

PubMed

Jung, Sung-Jin; Hong, Seong-Kwan; Kwon, Oh-Kyong

2017-02-01

This paper presents a low-noise amplifier (LNA) using attenuation-adaptive noise control (AANC) for ultrasound imaging systems. The proposed AANC reduces unnecessary power consumption of the LNA, which arises from useless noise floor, by controlling the noise floor of the LNA with respect to the attenuation of the ultrasound. In addition, a current feedback amplifier with a source-degenerated input stage reduces variations of the bandwidth and the closed loop gain, which are caused by the AANC. The proposed LNA was fabricated using a 0.18-[Formula: see text] CMOS process. The input-referred voltage noise density of the fabricated LNA is 1.01 [Formula: see text] at the frequency of 5 MHz. The second harmonic distortion is -53.5 dB when the input signal frequency is 5 MHz and the output voltage swing is 2 [Formula: see text]. The power consumption of the LNA using the AANC is 16.2 mW at the supply voltage of 1.8 V, which is reduced to 64% of that without using the AANC. The noise efficiency factor (NEF) of the proposed LNA is 3.69, to our knowledge, which is the lowest NEF compared with previous LNAs for ultrasound imaging.

Wide Bandgap Extrinsic Photoconductive Switches

NASA Astrophysics Data System (ADS)

Sullivan, James Stephen

Wide Bandgap Extrinsic Photoconductive Switches Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6H-SiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators. The successful development of a vanadium compensated, 6H-SiC extrinsic photoconductive switch for use as a closing switch for compact accelerator applications was realized by improvements made to the vanadium, nitrogen and boron impurity densities. The changes made to the impurity densities were based on the physical intuition outlined and simple rate equation models. The final 6H-SiC impurity 'recipe' calls for vanadium, nitrogen and boron densities of 2.5 e17 cm-3, 1.25e17 cm-3 and ≤ 1e16 cm-3, respectively. This recipe was originally developed to maximize the quantum efficiency of the vanadium compensated 6H-SiC, while maintaining a thermally stable semi-insulating material. The rate equation models indicate that, besides increasing the quantum efficiency, the impurity recipe should be expected to also increase the carrier recombination time. Three generations of 6H-SiC materials were tested. The third generation vanadium compensated 6H-SiC has average impurity densities close to the recipe values. Extrinsic photoconductive switches constructed from the third generation vanadium compensated, 6H-SiC, 1 mm thick, 1 cm2, substrates have achieved high power operation at 16 kV with pulsed currents exceeding 1400 Amperes and a minimum on resistance of 1 ohm. The extrinsic photoconductive switch performance of the third generation 6H-SiC material was improved by a factor of up to 50 for excitation at the 532 nm wavelength compared to the initial 6H-SiC material. Switches based on this material have been incorporated into a prototype compact proton medical accelerator being developed by the Compact Particle Acceleration Corporation (CPAC). The vanadium compensated, 6H-SiC, extrinsic photoconductive switch operates differently when excited by 1064, or 532 nm, wavelength light. The 6H-SiC extrinsic photoconductive switch is a unipolar device when excited with 1064 nm light. The carriers are electrons excited from filled vanadium acceptor levels and other electron traps located within 1.17 eV of the conduction band. The switch is bipolar at 532 nm since the carriers consist of holes, as well as electrons. The holes are primarily generated by the excitation of valence band electrons into empty trap/acceptor levels and by two-photon absorption. Carrier generation by two-photon absorption becomes more important at high applied optical intensity at 532 nm and contributes to the supralinear behavior of switch conductance as a function of optical power. The 6H-SiC switch material is trap dominated at low nitrogen to vanadium ratios. The trap dominated vanadium compensated 6H-SiC exhibits low quantum efficiency when excited with 1064 and 532 nm light and has a carrier recombination time of ˜ 150 - 300 ps. The vanadium compensated 6H-SiC transitions to an impurity dominated material as the ratio of nitrogen to vanadium is increased to 0.5. The increased nitrogen doping produces a material with much higher quantum efficiency and carrier recombination time of 0.9 to 1.0 ns. The iron compensated 2H-GaN did not perform well as an extrinsic photoconductive switch. The density of carriers generated at 1064 nm was, low indicating that there were very few electrons trapped in the iron acceptor level located at 0.5 - 0.6 eV below the conduction band. Carrier generation at 532 nm was dominated by two photon absorption resulting in the switch conductance increasing as the square of applied optical intensity. A minimum switch resistance of 0.8 ohms was calculated for the 400 nm thick, 1.2 by 1.2 cm, 2H-GaN switch for an applied optical intensity of 41.25 MW/cm2. An optical intensity of ˜ 70 MW/cm2 at 532 nm would be required to achieve a 0.8 ohm on resistance for a 1 mm thick, 1 cm2, 2H-GaN switch.

An automatic tracking system for phase-noise measurement.

PubMed

Yuen, Chung Ming; Tsang, Kim Fung

2005-05-01

A low cost, automatic tracking system for phase noise measurement has been implemented successfully. The tracking system is accomplished by applying a charge pump phase-locked loop as an external reference source to a digital spectrum analyzer. Measurement of a 2.5 GHz, free-running, voltage-controlled oscillator demonstrated the tracking accuracy, thus verifying the feasibility of the system.

The role of solitons on the tunneling magnetoresistance through a double-stranded DNA molecule

NASA Astrophysics Data System (ADS)

Ashhadi, M.

2018-07-01

We have studied the role of solitons on the spin-dependent transport properties of through a double-stranded DNA (dsDNA) molecule attached to two the semi-infinite ferromagnetic (FM) electrodes. The work is based on a tight-binding Hamiltonian model within the framework of a generalized Green's function technique and relies on the Landauer-Bütikker formalism as the basis for studying the current-voltage characteristic of this system. The conductance properties of the spin system are studied for a ladder model for poly (dG)-poly (dC) DNA molecule. Our calculations indicate that the presence of a homogeneous distribution of the solitons along the molecular, as a sublattice of the correlated solitons, gives rise to significant enhancement in the density of states within the bandgap and large enhancement in conductance and the current-voltage characteristic. It is also shown that tunnel magnetoresistance (TMR) decreases in compared with TMR obtained in the absence of solitons.

Hole trap formation in polymer light-emitting diodes under current stress

NASA Astrophysics Data System (ADS)

Niu, Quan; Rohloff, Roland; Wetzelaer, Gert-Jan A. H.; Blom, Paul W. M.; Crǎciun, N. Irina

2018-06-01

Polymer light-emitting diodes (PLEDs) are attractive for use in large-area displays and lighting panels, but their limited stability under current stress impedes commercialization. In spite of large efforts over the last two decades a fundamental understanding of the degradation mechanisms has not been accomplished. Here we demonstrate that the voltage drift of a PLED driven at constant current is caused by the formation of hole traps, which leads to additional non-radiative recombination between free electrons and trapped holes. The observed trap formation rate is consistent with exciton-free hole interactions as the main mechanism behind PLED degradation, enabling us to unify the degradation behaviour of various poly(p-phenylene) derivatives. The knowledge that hole trap formation is the cause of PLED degradation means that we can suppress the negative effect of hole traps on voltage and efficiency by blending the light-emitting polymer with a large-bandgap semiconductor. Owing to trap-dilution these blended PLEDs show unprecedented stability.

A Manufacturing Cost and Supply Chain Analysis of SiC Power Electronics Applicable to Medium-Voltage Motor Drives

DOE Office of Scientific and Technical Information (OSTI.GOV)

Horowitz, Kelsey; Remo, Timothy; Reese, Samantha

Wide bandgap (WBG) semiconductor devices are increasingly being considered for use in certain power electronics applications, where they can improve efficiency, performance, footprint, and, potentially, total system cost compared to systems using traditional silicon (Si) devices. Silicon carbide (SiC) devices in particular -- which are currently more mature than other WBG devices -- are poised for growth in the coming years. Today, the manufacturing of SiC wafers is concentrated in the United States, and chip production is split roughly equally between the United States, Japan, and Europe. Established contract manufacturers located throughout Asia typically carry out manufacturing of WBG powermore » modules. We seek to understand how global manufacturing of SiC components may evolve over time by illustrating the regional cost drivers along the supply chain and providing an overview of other factors that influence where manufacturing is sited. We conduct this analysis for a particular case study where SiC devices are used in a medium-voltage motor drive.« less

Tunable reflectance of an inverse opal-chiral nematic liquid crystal multilayer device by electric- or thermal-control.

PubMed

Zhang, Yuxian; Zhao, Weidong; Wen, Jiahui; Li, Jinming; Yang, Zhou; Wang, Dong; Cao, Hui; Quan, Maohua

2017-05-21

A new type of electric- or thermal-responsive multilayer device composed of SiO 2 bilayer inverse opal (IOP) and chiral nematic liquid crystals (N*LCs) was developed. Bilayer IOP was fabricated by layer-by-layer assembly of polystyrene (PS) spheres with two different sizes and showed a reflectance in an extended range of the near-infrared region. Furthermore, the electrically or thermally tunable reflectance of the bilayer-IOP-N*LC device was investigated. The device exhibited the photonic bandgap (PBG) of the N*LC-IOP composite structure with the application of an electric field (voltage-on), while it presented the reflectance of N*LCs without an electric field (voltage-off) and the electrically-responsive behaviour could be reversibly switched. Besides, the device exhibited a gradient redshift of reflectance as temperature increased below the clearing point (T C ) while it showed the PBG of the N*LC-IOP composite structure when the temperature was above T C .

Enhanced mobility CsPbI3 quantum dot arrays for record-efficiency, high-voltage photovoltaic cells

PubMed Central

Sanehira, Erin M.; Marshall, Ashley R.; Christians, Jeffrey A.; Harvey, Steven P.; Ciesielski, Peter N.; Wheeler, Lance M.; Schulz, Philip; Lin, Lih Y.; Beard, Matthew C.; Luther, Joseph M.

2017-01-01

We developed lead halide perovskite quantum dot (QD) films with tuned surface chemistry based on A-site cation halide salt (AX) treatments. QD perovskites offer colloidal synthesis and processing using industrially friendly solvents, which decouples grain growth from film deposition, and at present produce larger open-circuit voltages (VOC’s) than thin-film perovskites. CsPbI3 QDs, with a tunable bandgap between 1.75 and 2.13 eV, are an ideal top cell candidate for all-perovskite multijunction solar cells because of their demonstrated small VOC deficit. We show that charge carrier mobility within perovskite QD films is dictated by the chemical conditions at the QD-QD junctions. The AX treatments provide a method for tuning the coupling between perovskite QDs, which is exploited for improved charge transport for fabricating high-quality QD films and devices. The AX treatments presented here double the film mobility, enabling increased photocurrent, and lead to a record certified QD solar cell efficiency of 13.43%. PMID:29098184

Low-noise pulse conditioner

DOEpatents

Bird, D.A.

1981-06-16

A low-noise pulse conditioner is provided for driving electronic digital processing circuitry directly from differentially induced input pulses. The circuit uses a unique differential-to-peak detector circuit to generate a dynamic reference signal proportional to the input peak voltage. The input pulses are compared with the reference signal in an input network which operates in full differential mode with only a passive input filter. This reduces the introduction of circuit-induced noise, or jitter, generated in ground referenced input elements normally used in pulse conditioning circuits, especially speed transducer processing circuits. This circuit may be used for conditioning the sensor signal from the Fidler coil in a gas centrifuge for separation of isotopic gaseous mixtures.

Method and apparatus for frequency spectrum analysis

NASA Technical Reports Server (NTRS)

Cole, Steven W. (Inventor)

1992-01-01

A method for frequency spectrum analysis of an unknown signal in real-time is discussed. The method is based upon integration of 1-bit samples of signal voltage amplitude corresponding to sine or cosine phases of a controlled center frequency clock which is changed after each integration interval to sweep the frequency range of interest in steps. Integration of samples during each interval is carried out over a number of cycles of the center frequency clock spanning a number of cycles of an input signal to be analyzed. The invention may be used to detect the frequency of at least two signals simultaneously. By using a reference signal of known frequency and voltage amplitude (added to the two signals for parallel processing in the same way, but in a different channel with a sampling at the known frequency and phases of the reference signal), the absolute voltage amplitude of the other two signals may be determined by squaring the sine and cosine integrals of each channel and summing the squares to obtain relative power measurements in all three channels and, from the known voltage amplitude of the reference signal, obtaining an absolute voltage measurement for the other two signals by multiplying the known voltage of the reference signal with the ratio of the relative power of each of the other two signals to the relative power of the reference signal.

Silicon, germanium, and III-V-based tunneling devices for low-power applications

NASA Astrophysics Data System (ADS)

Smith, Joshua T.

While the scaling of transistor dimensions has kept pace with Moore's Law, the voltages applied to these devices have not scaled in tandem, giving rise to ever-increasing power/heating challenges in state-of-the-art integrated circuits. A primary reason for this scaling mismatch is due to the thermal limit---the 60 mV minimum required at room temperature to change the current through the device by one order of magnitude. This voltage scaling limitation is inherent in devices that rely on the mechanism of thermal emission of charge carriers over a gate-controlled barrier to transition between the ON- and OFF-states, such as in the case of conventional CMOS-based technologies. To overcome this voltage scaling barrier, several steep-slope device concepts have been pursued that have experimentally demonstrated sub-60-mV/decade operation since 2004, including the tunneling-field effect transistor (TFET), impact ionization metal-oxide-semiconductor (IMOS), suspended-gate FET (SG-FET), and ferroelectric FET (Fe-FET). These reports have excited strong efforts within the semiconductor research community toward the realization of a low-power device that will support continued scaling efforts, while alleviating the heating issues prevalent in modern computer chips. Literature is replete with claims of sub-60-mV/decade operation, but often with neglect to other voltage scaling factors that offset this result. Ideally, a low-power device should be able to attain sub-60-mV/decade inverse subthreshold slopes (S) employing low supply and gate voltages with a foreseeable path toward integration. This dissertation describes the experimental development and realization of CMOS-compatible processes to enhance tunneling efficiency in Si and Si/Ge nanowire (NW) TFETs for improved average S (S avg) and ON-currents (ION), and a novel, III-V-based tunneling device alternative is also proposed. After reviewing reported efforts on the TFET, IMOS, and SG-FET, the TFET is highlighted as the most promising low-power device candidate, owing to its potential to operate within small supply and gate voltage windows. In a critical analysis of the TFET, the advantages of 1-D systems, such as NWs, that can potentially access the so-called quantum capacitance limit (QCL) are discussed, and the remaining challenges for TFETs, such as source/channel doping abruptness, and material tradeoffs are considered. To this end, substantial performance improvements, as measured by Savg and ION, are experimentally realized in top-down fabricated Si NW-TFET arrays by systematically varying the annealing process used to enhance doping abruptness at the source/channel junction---a critical feature for maximizing tunneling efficiency. A combination of excimer laser annealing (ELA) and a low-temperature rapid thermal anneal (LT-RTA) are identified as an optimum choice, resulting in a 36% decrease in Savg as well as ˜500% improvement in ION over the conventional RTA approach. Extrapolation of these results with simulation shows that sub-60-mV/decade operation is possible on a Si-based platform for aggressively scaled, yet realistic, NW-TFET devices. Back-gated NW-FET measurements are also presented to assess the material quality of Ge/Si core/shell NW heterostructures with an n+-doped shell, and these NWs are found to be suitable building blocks for the fabrication of more efficient TFET systems, owing to the very abrupt doping profile at the shell/core (source/channel) interface and smaller bandgap/effective mass of the Ge channel. Finally, low current levels in conventional TFETs have recently led researchers to re-examine III-V heterostructures, particularly those with a broken-gap band alignment to allow a tunneling probability near unity. Along these lines, a novel tunnel-based alternative is presented---the broken-gap tunnel MOS---that enables a constant S < 60 mV/decade. The proposed device permits the use of 2-D device architectures without degradation of S given the source-controlled operation mechanism, while simultaneously avoiding undesirable nonlinearities in the output characteristics.

Influence of Ambient Humidity on the Voltage Response of Ionic Polymer-Metal Composite Sensor.

PubMed

Zhu, Zicai; Horiuchi, Tetsuya; Kruusamäe, Karl; Chang, Longfei; Asaka, Kinji

2016-03-31

Electrical potential based on ion migration exists not only in natural systems but also in ionic polymer materials. In order to investigate the influence of ambient humidity on voltage response, classical Au-Nafion IPMC was chosen as the reference sample. Voltage response under a bending deformation was measured in two ways: first, continuous measurement of voltage response in the process of absorption and desorption of water to study the tendency of voltage variation at all water states; second, measurements at multiple fixed ambient humidity levels to characterize the process of voltage response quantitatively. Ambient humidity influences the voltage response mainly by varying water content in ionic polymer. Under a step bending, the amplitude of initial voltage peak first increases and then decreases as the ambient humidity and the inherent water content decrease. This tendency is explained semiquantitatively by mass storage capacity related to the stretchable state of the Nafion polymer network. Following the initial peak, the voltage shows a slow decay to a steady state, which is first characterized in this paper. The relative voltage decay during the steady state always decreases as the ambient humidity is lowered. It is ascribed to progressive increase of the ratio between the water molecules in the cation hydration shell to the free water. Under sinusoidal mechanical bending excitation in the range of 0.1-10 Hz, the voltage magnitude increases with frequency at high ambient humidity but decreases with frequency at low ambient humidity. The relationship is mainly controlled by the voltage decay effect and the response speed.

Optoelectronic oscillator incorporating hollow-core photonic bandgap fiber.

PubMed

Mutugala, U S; Kim, J; Bradley, T D; Wheeler, N V; Sandoghchi, S R; Hayes, J R; Numkam Fokoua, E; Poletti, F; Petrovich, M N; Richardson, D J; Slavík, R

2017-07-01

We demonstrate, to the best of our knowledge, the first optoelectronic oscillator that uses hollow-core photonic bandgap fiber (HC-PBGF) as a delay element of a sufficient length to allow for low-noise operation. We show experimentally that HC-PBGF can improve the temperature stability of the oscillator by a factor of more than 15, as compared to standard optical fiber. We also measured the oscillator's phase noise, allowing evaluation of the suitability of HC-PBGF for this application. Additionally, this Letter also provides, to the best of our knowledge, the first characterization of the temperature stability of a long length (>800  m in our Letter) of low-thermal sensitivity (2  ps/km/K) HC-PBGF wound on a spool.

Lateral power MOSFETs in silicon carbide

NASA Astrophysics Data System (ADS)

Spitz, Jan

2001-07-01

Because of its large bandgap, its high critical electric field, and its high quality native SiO2, silicon carbide is considered to be the material of choice for power switching electronics in the future. Until 1997 the maximum thickness of commercially available epilayers serving as the drift region for power devices has been limited to 10--15 mum, limiting the maximum blocking voltage to 1500 V for vertical power devices in silicon carbide. In this study, we present the first lateral power devices on a semi-insulating vanadium doped substrate of silicon carbide. The first generation of lateral DMOSFETs in 4H-SiC yielded a blocking voltage of 2.6 kV---more than twice what was previously reported for any SiC MOSFETs---but suffered from low MOS channel mobility caused by the high anneal temperatures (≥1600°C) required to activate the p-type ion-implant. Combining the high blocking-voltage of the vanadium-doped substrate with the higher MOS mobility previously achieved by an epitaxially-grown accumulation channel leads us to the LACCUFET device: No p-type implant is necessary. This device shows a blocking voltage of 2.7 kV unmatched by any SiC transistor until February 2000 combined with a much lower specific on-resistance of 3.6 O•cm2. The ability to combine long-channel test MOSFETs with high channel mobility of 27 cm2/(volt·sec) in 4H-SiC with power devices of 13 cm2/(volt·sec) on the same chip has been demonstrated. The Figure of Merit Vblock 2/Ron,sp for this new NON-RESURF LDMOSFET in 4H-SiC is close to the theoretical limit for vertical power devices made of silicon. The specific on-resistance can be reduced by factor 2.5 by forward-biasing the p-base to source junction by 2 to 3 volts. Basic operation in Static Induction Injection Accumulation FET (SIAFET) mode has been demonstrated. Lateral (Non-Punch-Through) Insulated Gate Bipolar Transistors (LIGBT) have been presented for the first time showing similar on-resistance and blocking voltages but significantly higher on-currents for both 4H and 6H-SiC devices compared to their MOSFET counterparts. Test p-i-n diodes show lower on-resistance by carrier injection into the drift region.

Discharge reliability in ablative pulsed plasma thrusters

NASA Astrophysics Data System (ADS)

Wu, Zhiwen; Sun, Guorui; Yuan, Shiyue; Huang, Tiankun; Liu, Xiangyang; Xie, Kan; Wang, Ningfei

2017-08-01

Discharge reliability is typically neglected in low-ignition-cycle ablative pulsed plasma thrusters (APPTs). In this study, the discharge reliability of an APPT is assessed analytically and experimentally. The goals of this study are to better understand the ignition characteristics and to assess the accuracy of the analytical method. For each of six sets of operating conditions, 500 tests of a parallel-plate APPT with a coaxial semiconductor spark plug are conducted. The discharge voltage and current are measured with a high-voltage probe and a Rogowski coil, respectively, to determine whether the discharge is successful. Generally, the discharge success rate increases as the discharge voltage increases, and it decreases as the electrode gap and the number of ignitions increases. The theoretical analysis and the experimental results are reasonably consistent. This approach provides a reference for designing APPTs and improving their stability.

A new type of accelerator power supply based on voltage-type space vector PWM rectification technology

NASA Astrophysics Data System (ADS)

Wu, Fengjun; Gao, Daqing; Shi, Chunfeng; Huang, Yuzhen; Cui, Yuan; Yan, Hongbin; Zhang, Huajian; Wang, Bin; Li, Xiaohui

2016-08-01

To solve the problems such as low input power factor, a large number of AC current harmonics and instable DC bus voltage due to the diode or thyristor rectifier used in an accelerator power supply, particularly in the Heavy Ion Research Facility in Lanzhou-Cooler Storage Ring (HIRFL-CSR), we designed and built up a new type of accelerator power supply prototype base on voltage-type space vector PWM (SVPWM) rectification technology. All the control strategies are developed in TMS320C28346, which is a digital signal processor from TI. The experimental results indicate that an accelerator power supply with a SVPWM rectifier can solve the problems above well, and the output performance such as stability, tracking error and ripple current meet the requirements of the design. The achievement of prototype confirms that applying voltage-type SVPWM rectification technology in an accelerator power supply is feasible; and it provides a good reference for design and build of this new type of power supply.

Spectral stability of supercontinuum generation in condensed mediums

NASA Astrophysics Data System (ADS)

Wang, Jier; Zhang, Yizhu; Shen, Huifeng; Jiang, Yuhai; Wang, Zhongyang

2017-07-01

The features of the supercontinuum generation (SCG) using intense femtosecond pulses are systematically investigated in condensed mediums [sapphire, BK7 glass, ultraviolet (UV)-fused silica, and fluoride crystals]. By optimizing the experimental conditions and choosing suitable mediums, the bandwidth of the SCG can be extended to the UV regime with good spectral stability. This study demonstrates that materials with high bandgap present high efficiency for SCG, particularly in the short wavelength region. The achievable short wavelength and low power-density threshold of the SCG exhibit complicated correlations with the bandgap of condensed mediums.

A Study of 4-level DC-DC Boost Inverter with Passive Component Reduction Consideration

NASA Astrophysics Data System (ADS)

Kasiran, A. N.; Ponniran, A.; Harimon, M. A.; Hamzah, H. H.

2018-04-01

This study is to analyze design principles of boost inductor and capacitor used in the 4-level DC-DC boost converter to realize size reduction of passive component referring to their attributes. The important feature of this circuit is that most of the boost-up energy is transferred from the capacitor-clamped to the output side which the small inductance can be used at the input side. The inductance of the boost inductor is designed by referring the inductor current ripple. On the other hand, the capacitance of the capacitor-clamped is designed by considering voltage stress on semiconductor devices and also the used switching frequency. Besides that, according to the design specifications, the required inductance in 4-level DC-DC boost converter is decreased compared to a conventional conventional DC-DC boost converter. Meanwhile, voltage stress on semiconductor device is depending on the maximum voltage ripple of the capacitor-clamped. A 50 W 4-level DC-DC boost converter prototype has been constructed. The results show that the inductor current ripple was 1.15 A when the inductors, 1 mH and 0.11 mH were used in the conventional and 4-level DC-DC boost converters, respectively. Thus, based on the experimental results, it shows that the reduction of passive components by referring to their attributes in 4-level DC-DC boost converter is achieved. Moreover, the decreasing of voltage stress on the semiconductor devices is an advantage for the selection of low ON-resistance of the devices which will contribute to the reduction of the semiconductor conduction loss. The integration result of boost converter and H-bridge inverter is also shown.

The effect of cation doping on the morphology, optical and structural properties of highly oriented wurtzite ZnO-nanorod arrays grown by a hydrothermal method

NASA Astrophysics Data System (ADS)

Hassanpour, A.; Guo, P.; Shen, S.; Bianucci, P.

2017-10-01

Undoped and C-doped (C: Mg2+, Ni2+, Mn2+, Co2+, Cu2+, Cr3+) ZnO nanorods were synthesized by a hydrothermal method at temperatures as low as 60 °C. The effect of doping on the morphology of the ZnO nanorods was visualized by taking their cross section and top SEM images. The results show that the size of nanorods was increased in both height and diameter by cation doping. The crystallinity change of the ZnO nanorods due to each doping element was thoroughly investigated by an x-ray diffraction (XRD). The XRD patterns show that the wurtzite crystal structure of ZnO nanorods was maintained after cation addition. The optical Raman-active modes of undoped and cation-doped nanorods were measured with a micro-Raman setup at room temperature. The surface chemistry of samples was investigated by x-ray photoelectron spectroscopy and energy-dispersive x-ray spectroscopy. Finally, the effect of each cation dopant on band-gap shift of the ZnO nanorods was investigated by a photoluminescence setup at room temperature. Although the amount of dopants (Mg2+, Ni2+, and Co2+) was smaller than the amount of Mn2+, Cu2+, and Cr3+ in the nanorods, their effect on the band structure of the ZnO nanorods was profound. The highest band-gap shift was achieved for a Co-doped sample, and the best crystal orientation was for Mn-doped ZnO nanorods. Our results can be used as a comprehensive reference for engineering of the morphological, structural and optical properties of cation-doped ZnO nanorods by using a low-temperature synthesis as an economical mass-production approach.

A three solar cell system based on a self-supporting, transparent AlGaAs top solar cell

NASA Technical Reports Server (NTRS)

Negley, Gerald H.; Rhoads, Sandra L.; Terranova, Nancy E.; Mcneely, James B.; Barnett, Allen M.

1989-01-01

Development of a three solar cell stack can lead to practical efficiencies greater than 30 percent (1x,AM0). A theoretical efficiency limitation of 43.7 percent at AM0 and one sun is predicted by this model. Including expected losses, a practical system efficiency of 36.8 percent is anticipated. These calculations are based on a 1.93eV/1.43eV/0.89eV energy band gap combination. AlGaAs/GaAs/GaInAsP materials can be used with a six-terminal wiring configuration. The key issues for multijunction solar cells are the top and middle solar cell performance and the sub-bandgap transparency. AstroPower has developed a technique to fabricate AlGaAs solar cells on rugged, self-supporting, transparent AlGaAs substrates. Top solar cell efficiencies greater than 11 percent AM0 have been achieved. State-of-the-art GaAs or InP devices will be used for the middle solar cell. GaInAsP will be used to fabricate the bottom solar cell. This material is lattice-matched to InP and offers a wide range of bandgaps for optimization of the three solar cell stack. Liquid phase epitaxy is being used to grow the quaternary material. Initial solar cells have shown open-circuit voltages of 462 mV for a bandgap of 0.92eV. Design rules for the multijunction three solar cell stack are discussed. The progress in the development of the self-supporting AlGaAs top solar cell and the GaInAsP bottom solar cell is presented.

Synthesis of Large-Size 1T' ReS2x Se2(1-x) Alloy Monolayer with Tunable Bandgap and Carrier Type.

PubMed

Cui, Fangfang; Feng, Qingliang; Hong, Jinhua; Wang, Renyan; Bai, Yu; Li, Xiaobo; Liu, Dongyan; Zhou, Yu; Liang, Xing; He, Xuexia; Zhang, Zhongyue; Liu, Shengzhong; Lei, Zhibin; Liu, Zonghuai; Zhai, Tianyou; Xu, Hua

2017-12-01

Chemical vapor deposition growth of 1T' ReS 2 x Se 2(1- x ) alloy monolayers is reported for the first time. The composition and the corresponding bandgap of the alloy can be continuously tuned from ReSe 2 (1.32 eV) to ReS 2 (1.62 eV) by precisely controlling the growth conditions. Atomic-resolution scanning transmission electron microscopy reveals an interesting local atomic distribution in ReS 2 x Se 2(1- x ) alloy, where S and Se atoms are selectively occupied at different X sites in each Re-X 6 octahedral unit cell with perfect matching between their atomic radius and space size of each X site. This structure is much attractive as it can induce the generation of highly desired localized electronic states in the 2D surface. The carrier type, threshold voltage, and carrier mobility of the alloy-based field effect transistors can be systematically modulated by tuning the alloy composition. Especially, for the first time the fully tunable conductivity of ReS 2 x Se 2(1- x ) alloys from n-type to bipolar and p-type is realized. Owing to the 1T' structure of ReS 2 x Se 2(1- x ) alloys, they exhibit strong anisotropic optical, electrical, and photoelectric properties. The controllable growth of monolayer ReS 2 x Se 2(1- x ) alloy with tunable bandgaps and electrical properties as well as superior anisotropic feature provides the feasibility for designing multifunctional 2D optoelectronic devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A new family of multifunctional silicon clathrates: Optoelectronic and thermoelectric applications

NASA Astrophysics Data System (ADS)

Liu, Yinqiao; Jiang, Xue; Huang, Yingying; Zhou, Si; Zhao, Jijun

2017-02-01

To develop Si structures for multifunctional applications, here we proposed four new low-density silicon clathrates (Si-CL-A, Si-CL-B, Si-CL-C, and Si-CL-D) based on the same bonding topologies of clathrate hydrates. The electronic and thermal properties have been revealed by first-principles calculations. By computing their equation of states, phonon dispersion, and elastic constants, the thermodynamic, dynamic, and mechanical stabilities of Si-CL-A, Si-CL-B, Si-CL-C, and Si-CL-D allotropes are confirmed. In the low-density region of the phase diagram, Si-CL-B, Si-CL-D, and Si-CL-C would overtake diamond silicon and type II clathrate (Si-CL-II) and emerge as the most stable Si allotropes successively. Among them, the two direct semiconductors with bandgaps of 1.147 eV (Si-CL-A) and 1.086 eV (Si-CL-D) are found. The suitable bandgaps close to the optimal Shockley-Queisser limit result in better absorption efficiency in solar spectrum than conventional diamond silicon. Owing to the unique cage-based framework, the thermal conductivity of these Si allotropes at room temperature are very low (2.7-5.7 Wm-1 K-1), which are lower than that of diamond structured Si by two orders of magnitude. The suitable bandgaps, small effective masses, and low thermal conductivity of our new silicon allotropes are anticipated to find applications in photovoltaic and thermoelectric devices.

Quick-low-density parity check and dynamic threshold voltage optimization in 1X nm triple-level cell NAND flash memory with comprehensive analysis of endurance, retention-time, and temperature variation

NASA Astrophysics Data System (ADS)

Doi, Masafumi; Tokutomi, Tsukasa; Hachiya, Shogo; Kobayashi, Atsuro; Tanakamaru, Shuhei; Ning, Sheyang; Ogura Iwasaki, Tomoko; Takeuchi, Ken

2016-08-01

NAND flash memory’s reliability degrades with increasing endurance, retention-time and/or temperature. After a comprehensive evaluation of 1X nm triple-level cell (TLC) NAND flash, two highly reliable techniques are proposed. The first proposal, quick low-density parity check (Quick-LDPC), requires only one cell read in order to accurately estimate a bit-error rate (BER) that includes the effects of temperature, write and erase (W/E) cycles and retention-time. As a result, 83% read latency reduction is achieved compared to conventional AEP-LDPC. Also, W/E cycling is extended by 100% compared with conventional Bose-Chaudhuri-Hocquenghem (BCH) error-correcting code (ECC). The second proposal, dynamic threshold voltage optimization (DVO) has two parts, adaptive V Ref shift (AVS) and V TH space control (VSC). AVS reduces read error and latency by adaptively optimizing the reference voltage (V Ref) based on temperature, W/E cycles and retention-time. AVS stores the optimal V Ref’s in a table in order to enable one cell read. VSC further improves AVS by optimizing the voltage margins between V TH states. DVO reduces BER by 80%.

Recent progress in GeSn growth and GeSn-based photonic devices

NASA Astrophysics Data System (ADS)

Zheng, Jun; Liu, Zhi; Xue, Chunlai; Li, Chuanbo; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming

2018-06-01

The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn content exceeds 6%. It shows great potential for laser use in optoelectronic integration circuits (OEIC) on account of its low light emission efficiency arising from the indirect bandgap characteristics of Si and Ge. The bandgap of GeSn can be tuned from 0.6 to 0 eV by varying the Sn content, thus making this alloy suitable for use in near-infrared and mid-infrared detectors. In this paper, the growth of the GeSn alloy is first reviewed. Subsequently, GeSn photodetectors, light emitting diodes, and lasers are discussed. The GeSn alloy presents a promising pathway for the monolithic integration of Si photonic circuits by the complementary metal–oxide–semiconductor (CMOS) technology. Project supported by the Beijing Natural Science Foundation (No. 4162063) and the Youth Innovation Promotion Association of CAS (No. 2015091).

Reducing support loss in micromechanical ring resonators using phononic band-gap structures

NASA Astrophysics Data System (ADS)

Hsu, Feng-Chia; Hsu, Jin-Chen; Huang, Tsun-Che; Wang, Chin-Hung; Chang, Pin

2011-09-01

In micromechanical resonators, energy loss via supports into the substrates may lead to a low quality factor. To eliminate the support loss, in this paper a phononic band-gap structure is employed. We demonstrate a design of phononic-crystal (PC) strips used to support extensional wine-glass mode ring resonators to increase the quality factor. The PC strips are introduced to stop elastic-wave propagation by the band-gap and deaf-band effects. Analyses of resonant characteristics of the ring resonators and the dispersion relations, eigenmodes, and transmission properties of the PC strips are presented. With the proposed resonator architecture, the finite-element simulations show that the leaky power is effectively reduced and the stored energy inside the resonators is enhanced simultaneously as the operating frequencies of the resonators are within the band gap or deaf bands. Realization of a high quality factor micromechanical ring resonator with minimized support loss is expected.

Performance investigation of bandgap, gate material work function and gate dielectric engineered TFET with device reliability improvement

NASA Astrophysics Data System (ADS)

Raad, Bhagwan Ram; Nigam, Kaushal; Sharma, Dheeraj; Kondekar, P. N.

2016-06-01

This script features a study of bandgap, gate material work function and gate dielectric engineering for enhancement of DC and Analog/RF performance, reduction in the hot carriers effect (HCEs) and drain induced barrier lowering (DIBL) for better device reliability. In this concern, the use of band gap and gate material work function engineering improves the device performance in terms of the ON-state current and suppressed ambipolar behaviour with maintaining the low OFF-state current. With these advantages, the use of gate material work function engineering imposes restriction on the high frequency performance due to increment in the parasitic capacitances and also introduces the hot carrier effects. Hence, the gate dielectric engineering with bandgap and gate material work function engineering are used in this paper to overcome the cons of the gate material work function engineering by obtaining a superior performance in terms of the current driving capability, ambipolar conduction, HCEs, DIBL and high frequency parameters of the device for ultra-low power applications. Finally, the optimization of length for different work function is performed to get the best out of this.

Low-tube voltage 100 kVp MDCT in screening of cocaine body packing: image quality and radiation dose compared to 120 kVp MDCT.

PubMed

Aissa, Joel; Rubbert, Christian; Boos, Johannes; Schleich, Christoph; Thomas, Christoph; Kröpil, Patric; Antoch, Gerald; Miese, Falk

2015-10-01

The aim of this study was to evaluate the impact of a reduced tube potential (100 kVp) for non-enhanced abdominal low-dose CT on radiation dose and image quality (IQ) in the detection of body packing. This retrospective study was approved by the local research ethics committee of our clinic. From March 2012 to July 2014, 99 subjects were referred to our institute with suspected body packing. 50 CT scans were performed using a 120 kVp protocol (group A), and 49 CTs were performed using a low-dose protocol with a tube voltage of 100 kVp (group B). Subjective and objective IQ were assessed. DLP and CTDIvol were analyzed. All examinations were of diagnostic IQ. Objective IQ was not significantly different between the 120 kVp and 100 kVp protocol. Mean density of solid and liquid body packets was 210 ± 60.2 HU at 120 kVp and 250.6 ± 29.7 HU at 100 kVp. Radiation dose was significantly lower in group B as compared to group A (p < 0.05). In group A, body packs were detected in 16 (32%) of the 50 patients. In group B, packets were observed in 15 (31%) of 49 patients. Laboratory analysis detected cocaine in all smuggled body packs. Low-tube voltage 100 kVp MDCT with automated tube current modulation in screening of illegal drugs leads to a diagnostic IQ and significant dose reduction compared to 120 kVp low-tube voltage protocols. Despite lower radiation dose, liquid and solid cocaine containers retain high attenuation and are easily detected.

AlGaN channel field effect transistors with graded heterostructure ohmic contacts

NASA Astrophysics Data System (ADS)

Bajaj, Sanyam; Akyol, Fatih; Krishnamoorthy, Sriram; Zhang, Yuewei; Rajan, Siddharth

2016-09-01

We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFETs) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at the metal-AlGaN interface, resulting in highly resistive ohmic contacts. In this work, we use a reverse compositional graded n++ AlGaN contact layer to achieve upward electron affinity grading, leading to a low specific contact resistance (ρsp) of 1.9 × 10-6 Ω cm2 to n-Al0.75Ga0.25N channels (bandgap ˜5.3 eV) with non-alloyed contacts. We also demonstrate UWBG Al0.75Ga0.25N channel MISFET device operation employing the compositional graded n++ ohmic contact layer and 20 nm atomic layer deposited Al2O3 as the gate-dielectric.

Development of an efficient DC-DC SEPIC converter using wide bandgap power devices for high step-up applications

NASA Astrophysics Data System (ADS)

Al-bayati, Ali M. S.; Alharbi, Salah S.; Alharbi, Saleh S.; Matin, Mohammad

2017-08-01

A highly efficient high step-up dc-dc converter is the major requirement in the integration of low voltage renewable energy sources, such as photovoltaic panel module and fuel cell stacks, with a load or utility. This paper presents the development of an efficient dc-dc single-ended primary-inductor converter (SEPIC) for high step-up applications. Three SEPIC converters are designed and studied using different combinations of power devices: a combination based on all Si power devices using a Si-MOSFET and a Si-diode and termed as Si/Si, a combination based on a hybrid of Si and SiC power devices using the Si-MOSFET and a SiC-Schottky diode and termed as Si/SiC, and a combination based on all SiC power devices using a SiC-MOSFET and the SiC-Schottky diode and termed as SiC/SiC. The switching behavior of the Si-MOSFET and SiC-MOSFET is characterized and analyzed within the different combinations at the converter level. The effect of the diode type on the converter's overall performance is also discussed. The switching energy losses, total power losses, and the overall performance effciency of the converters are measured and reported under different switching frequencies. Furthermore, the potential of the designed converters to operate efficiently at a wide range of input voltages and output powers is studied. The analysis and results show an outstanding performance efficiency of the designed SiC/SiC based converter under a wide range of operating conditions.

First principles and Debye model study of the thermodynamic, electronic and optical properties of MgO under high-temperature and pressure

NASA Astrophysics Data System (ADS)

Miao, Yurun; Li, Huayang; Wang, Hongjuan; He, Kaihua; Wang, Qingbo

2018-02-01

First principles and quasi-harmonic Debye model have been used to study the thermodynamic properties, enthalpies, electronic and optical properties of MgO up to the core-mantle boundary (CMB) condition (137 GPa and 3700 K). Thermodynamic properties calculation includes thermal expansion coefficient and capacity, which have been studied up to the CMB pressure (137 GPa) and temperature (3700 K) by the Debye model with generalized gradient approximation (GGA) and local-density approximation (LDA). First principles with hybrid functional method (PBE0) has been used to calculate the electronic and optical properties under pressure up to 137 GPa and 0 K. Our results show the Debye model with LDA and first principles with PBE0 can provide accurate thermodynamic properties, enthalpies, electronic and optical properties. Calculated enthalpies show that MgO keep NaCl (B1) structure up to 137 GPa. And MgO is a direct bandgap insulator with a 7.23 eV calculated bandgap. The bandgap increased with increasing pressure, which will induce a blue shift of optical properties. We also calculated the density of states (DOS) and discussed the relation between DOS and band, optical properties. Equations were used to fit the relations between pressure and bandgaps, absorption coefficient (α(ω)) of MgO. The equations can be used to evaluate pressure after careful calibration. Our calculations can not only be used to identify some geological processes, but also offer a reference to the applications of MgO in the future.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smith, Stephen F; Moore, James A

Systems and methods are described for carrier-frequency synchronization for improved AM and TV broadcast reception. A method includes synchronizing a carrier frequency of a broadcast signal with a remote reference frequency. An apparatus includes a reference signal receiver; a phase comparator coupled to the reference signal receiver; a voltage controlled oscillator coupled to the phase comparator; and a radio frequency output coupled to the voltage controlled oscillator.

Sequential power-up circuit

DOEpatents

Kronberg, James W.

1992-01-01

A sequential power-up circuit for starting several electrical load elements in series to avoid excessive current surge, comprising a voltage ramp generator and a set of voltage comparators, each comparator having a different reference voltage and interfacing with a switch that is capable of turning on one of the load elements. As the voltage rises, it passes the reference voltages one at a time and causes the switch corresponding to that voltage to turn on its load element. The ramp is turned on and off by a single switch or by a logic-level electrical signal. The ramp rate for turning on the load element is relatively slow and the rate for turning the elements off is relatively fast. Optionally, the duration of each interval of time between the turning on of the load elements is programmable.

Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Webster, P. T.; Riordan, N. A.; Liu, S.

2015-12-28

The structural and optical properties of lattice-matched InAs{sub 0.911}Sb{sub 0.089} bulk layers and strain-balanced InAs/InAs{sub 1−x}Sb{sub x} (x ∼ 0.1–0.4) superlattices grown on (100)-oriented GaSb substrates by molecular beam epitaxy are examined using X-ray diffraction, spectroscopic ellipsometry, and temperature dependent photoluminescence spectroscopy. The photoluminescence and ellipsometry measurements determine the ground state bandgap energy and the X-ray diffraction measurements determine the layer thickness and mole fraction of the structures studied. Detailed modeling of the X-ray diffraction data is employed to quantify unintentional incorporation of approximately 1% Sb into the InAs layers of the superlattices. A Kronig-Penney model of the superlattice miniband structure ismore » used to analyze the valence band offset between InAs and InAsSb, and hence the InAsSb band edge positions at each mole fraction. The resulting composition dependence of the bandgap energy and band edge positions of InAsSb are described using the bandgap bowing model; the respective low and room temperature bowing parameters for bulk InAsSb are 938 and 750 meV for the bandgap, 558 and 383 meV for the conduction band, and −380 and −367 meV for the valence band.« less

Origin of unusual bandgap shift and dual emission in organic-inorganic lead halide perovskites

PubMed Central

Dar, M. Ibrahim; Jacopin, Gwénolé; Meloni, Simone; Mattoni, Alessandro; Arora, Neha; Boziki, Ariadni; Zakeeruddin, Shaik Mohammed; Rothlisberger, Ursula; Grätzel, Michael

2016-01-01

Emission characteristics of metal halide perovskites play a key role in the current widespread investigations into their potential uses in optoelectronics and photonics. However, a fundamental understanding of the molecular origin of the unusual blueshift of the bandgap and dual emission in perovskites is still lacking. In this direction, we investigated the extraordinary photoluminescence behavior of three representatives of this important class of photonic materials, that is, CH3NH3PbI3, CH3NH3PbBr3, and CH(NH2)2PbBr3, which emerged from our thorough studies of the effects of temperature on their bandgap and emission decay dynamics using time-integrated and time-resolved photoluminescence spectroscopy. The low-temperature (<100 K) photoluminescence of CH3NH3PbI3 and CH3NH3PbBr3 reveals two distinct emission peaks, whereas that of CH(NH2)2PbBr3 shows a single emission peak. Furthermore, irrespective of perovskite composition, the bandgap exhibits an unusual blueshift by raising the temperature from 15 to 300 K. Density functional theory and classical molecular dynamics simulations allow for assigning the additional photoluminescence peak to the presence of molecularly disordered orthorhombic domains and also rationalize that the unusual blueshift of the bandgap with increasing temperature is due to the stabilization of the valence band maximum. Our findings provide new insights into the salient emission properties of perovskite materials, which define their performance in solar cells and light-emitting devices. PMID:27819049

Origin of unusual bandgap shift and dual emission in organic-inorganic lead halide perovskites.

PubMed

Dar, M Ibrahim; Jacopin, Gwénolé; Meloni, Simone; Mattoni, Alessandro; Arora, Neha; Boziki, Ariadni; Zakeeruddin, Shaik Mohammed; Rothlisberger, Ursula; Grätzel, Michael

2016-10-01

Emission characteristics of metal halide perovskites play a key role in the current widespread investigations into their potential uses in optoelectronics and photonics. However, a fundamental understanding of the molecular origin of the unusual blueshift of the bandgap and dual emission in perovskites is still lacking. In this direction, we investigated the extraordinary photoluminescence behavior of three representatives of this important class of photonic materials, that is, CH 3 NH 3 PbI 3 , CH 3 NH 3 PbBr 3 , and CH(NH 2 ) 2 PbBr 3 , which emerged from our thorough studies of the effects of temperature on their bandgap and emission decay dynamics using time-integrated and time-resolved photoluminescence spectroscopy. The low-temperature (<100 K) photoluminescence of CH 3 NH 3 PbI 3 and CH 3 NH 3 PbBr 3 reveals two distinct emission peaks, whereas that of CH(NH 2 ) 2 PbBr 3 shows a single emission peak. Furthermore, irrespective of perovskite composition, the bandgap exhibits an unusual blueshift by raising the temperature from 15 to 300 K. Density functional theory and classical molecular dynamics simulations allow for assigning the additional photoluminescence peak to the presence of molecularly disordered orthorhombic domains and also rationalize that the unusual blueshift of the bandgap with increasing temperature is due to the stabilization of the valence band maximum. Our findings provide new insights into the salient emission properties of perovskite materials, which define their performance in solar cells and light-emitting devices.

Beneficial Effect of Post-Deposition Treatment in High-Efficiency Cu(In,Ga)Se2 Solar Cells through Reduced Potential Fluctuations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jensen, Soren A.; Glynn, Stephen; Kanevce, Ana

World-record power conversion efficiencies for Cu(In,Ga)Se2 (CIGS) solar cells have been achieved via a post-deposition treatment with alkaline metals, which increases the open-circuit voltage and fill factor. We explore the role of the potassium fluoride (KF) post-deposition treatment in CIGS by employing energy- and time-resolved photoluminescence spectroscopy and electrical characterization combined with numerical modeling. The bulk carrier lifetime is found to increase with post-deposition treatment from 255 ns to 388 ns, which is the longest charge carrier lifetime reported for CIGS, and within ~40% of the radiative limit. We find evidence that the post-deposition treatment causes a decrease in themore » electronic potential fluctuations. These potential fluctuations have previously been shown to reduce the open-circuit voltage and the device efficiency in CIGS. Additionally, numerical simulations based on the measured carrier lifetimes and mobilities show a diffusion length of ~10 um, which is ~4 times larger than the film thickness. Thus, carrier collection in the bulk is not a limiting factor for device efficiency. By considering differences in doping, bandgap, and potential fluctuations, we present a possible explanation for the voltage difference between KF-treated and untreated samples.« less

Low voltage to high voltage level shifter and related methods

NASA Technical Reports Server (NTRS)

Mentze, Erik J. (Inventor); Buck, Kevin M. (Inventor); Hess, Herbert L. (Inventor); Cox, David F. (Inventor)

2006-01-01

A shifter circuit comprises a high and low voltage buffer stages and an output buffer stage. The high voltage buffer stage comprises multiple transistors arranged in a transistor stack having a plurality of intermediate nodes connecting individual transistors along the stack. The transistor stack is connected between a voltage level being shifted to and an input voltage. An inverter of this stage comprises multiple inputs and an output. Inverter inputs are connected to a respective intermediate node of the transistor stack. The low voltage buffer stage has an input connected to the input voltage and an output, and is operably connected to the high voltage buffer stage. The low voltage buffer stage is connected between a voltage level being shifted away from and a lower voltage. The output buffer stage is driven by the outputs of the high voltage buffer stage inverter and the low voltage buffer stage.

Growth and Characterization of Wide Bandgap Semiconductor Oxide Thin Films

NASA Astrophysics Data System (ADS)

Ghose, Susmita

Wide bandgap semiconductors are receiving extensive attention due to their exceptional physical and chemical properties making them useful for high efficiency and high power electronic devices. Comparing other conventional wide bandgap materials, monoclinic beta-Ga2O3 also represents an outstanding semiconductor oxide for next generation of UV optoelectronics and high temperature sensors due to its wide band gap ( 4.9eV). This new semiconductor material has higher breakdown voltage (8MV/cm) and n-type conductivity which make it more suitable for potential application as high power electronics. The properties and potential applications of these wide bandgap materials have not yet fully explored. In this study, the growth and characterization of single crystal beta-Ga2O3 thin films grown on c-plane sapphire (Al2O3) substrate using two different techniques; molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) techniques has been investigated. The influence of the growth parameters of MBE and PLD on crystalline quality and surface has been explored. Two methods have been used to grow Ga2O3 using MBE; one method is to use elemental Ga and the second is the use of a polycrystalline Ga2O3 compound source with and without an oxygen source. Using the elemental Ga source, growth rate of beta-Ga2O3 thin films was limited due to the formation and desorption of Ga2O molecules. In order to mitigate this problem, a compound Ga2O3 source has been introduced and used for the growth of crystalline beta-Ga2O 3 thin films without the need for additional oxygen since this source produces Ga-O molecules and additional oxygen. Two different alloys (InGa) 2O3 and (AlGa)2O3 has been grown on c-plane sapphire substrate by pulsed laser deposition technique to tune the bandgap of the oxide thin films from 3.5-8.6 eV suitable for applications such as wavelength-tunable optical devices, solid-state lighting and high electron mobility transistors (HEMTs). The crystallinity, chemical bonding, surface morphology and optical properties have been systematically evaluated by a number of in-situ and ex-situ techniques. The crystalline Ga2O 3 films showed pure phase of (2¯01) plane orientation and in-plane XRD phi-scan exhibited the six-fold rotational symmetry for beta-Ga 2O3 when grown on sapphire substrate. The alloys exhibit different phases has been stabilized depending on the compositions. Finally, a metal-semiconductor-metal (MSM) structure deep-ultraviolet (DUV) photodetector has been fabricated on beta-Ga2O3 film grown with an optimized growth condition has been demonstrated. This photodetector exhibited high resistance as well as small dark current with expected photoresponse for 254 nm UV light irradiation suggesting beta-Ga2O3 thin films as a potential candidate for deep-UV photodetectors. While the grown Ga2O3 shows high resistivity, the electrical properties of (In0.6Ga0.4)2O3 and (In 0.8Ga0.2)2O3 alloys show low resistivity with a high carrier concentration and increasing mobility with In content.

Monolithic, multi-bandgap, tandem, ultra-thin, strain-counterbalanced, photovoltaic energy converters with optimal subcell bandgaps

DOEpatents

Wanlass, Mark W [Golden, CO; Mascarenhas, Angelo [Lakewood, CO

2012-05-08

Modeling a monolithic, multi-bandgap, tandem, solar photovoltaic converter or thermophotovoltaic converter by constraining the bandgap value for the bottom subcell to no less than a particular value produces an optimum combination of subcell bandgaps that provide theoretical energy conversion efficiencies nearly as good as unconstrained maximum theoretical conversion efficiency models, but which are more conducive to actual fabrication to achieve such conversion efficiencies than unconstrained model optimum bandgap combinations. Achieving such constrained or unconstrained optimum bandgap combinations includes growth of a graded layer transition from larger lattice constant on the parent substrate to a smaller lattice constant to accommodate higher bandgap upper subcells and at least one graded layer that transitions back to a larger lattice constant to accommodate lower bandgap lower subcells and to counter-strain the epistructure to mitigate epistructure bowing.

Semiconductor Metal-Organic Frameworks: Future Low-Bandgap Materials.

PubMed

Usman, Muhammad; Mendiratta, Shruti; Lu, Kuang-Lieh

2017-02-01

Metal-organic frameworks (MOFs) with low density, high porosity, and easy tunability of functionality and structural properties, represent potential candidates for use as semiconductor materials. The rapid development of the semiconductor industry and the continuous miniaturization of feature sizes of integrated circuits toward the nanometer (nm) scale require novel semiconductor materials instead of traditional materials like silicon, germanium, and gallium arsenide etc. MOFs with advantageous properties of both the inorganic and the organic components promise to serve as the next generation of semiconductor materials for the microelectronics industry with the potential to be extremely stable, cheap, and mechanically flexible. Here, a perspective of recent research is provided, regarding the semiconducting properties of MOFs, bandgap studies, and their potential in microelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Babadi, A. S., E-mail: aein.shiri-babadi@eit.lth.se; Lind, E.; Wernersson, L. E.

A qualitative analysis on capacitance-voltage and conductance data for high-κ/InAs capacitors is presented. Our measured data were evaluated with a full equivalent circuit model, including both majority and minority carriers, as well as interface and border traps, formulated for narrow band gap metal-oxide-semiconductor capacitors. By careful determination of interface trap densities, distribution of border traps across the oxide thickness, and taking into account the bulk semiconductor response, it is shown that the trap response has a strong effect on the measured capacitances. Due to the narrow bandgap of InAs, there can be a large surface concentration of electrons and holesmore » even in depletion, so a full charge treatment is necessary.« less

Voltage-matched, monolithic, multi-band-gap devices

DOEpatents

Wanlass, Mark W.; Mascarenhas, Angelo

2006-08-22

Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a sting of electrically connected photonic sub-cells. By carefully selecting the numbers of photonic sub-cells in the first and second layer photonic sub-cell string(s), and by carefully selecting the manner in which the sub-cells in a first and second layer photonic sub-cell string(s) are electrically connected, each of the first and second layer sub-cell strings may be made to achieve one or more substantially identical electrical characteristics.

Conductance of carbon based macro-molecular structures

NASA Astrophysics Data System (ADS)

Stafström, S.; Hansson, A.; Paulsson, M.

2000-11-01

Electron transport through metallic nanotubes and stacks of wide bandgap polyaromatic hydrocarbons (PAH) are studied theoretically using the Landauer formalism. These two systems constitute examples of different types of carbon based nanostructured materials of potential use in molecular electronics. The studies are carried out for structures with finite length that bridge two contact pads. In the case of perfect metallic nanotubes, the current is observed to increase stepwise with the applied voltage and the resistance is independent on the length of the tube. In the PAH stacks, the off resonance tunneling conductance decreases exponentially with the number of molecules in the stack and shows a near linear increase with the number of carbon atoms in each molecule.

Wide-Bandgap Semiconductor Devices for Automotive Applications

NASA Astrophysics Data System (ADS)

Sugimoto, M.; Ueda, H.; Uesugi, T.; Kachi, T.

2007-06-01

In this paper, we discuss requirements of power devices for automotive applications, especially hybrid vehicles and the development of GaN power devices at Toyota. We fabricated AlGaN/GaN HEMTs and measured their characteristics. The maximum breakdown voltage was over 600V. The drain current with a gate width of 31mm was over 8A. A thermograph image of the HEMT under high current operation shows the AlGaN/GaN HEMT operated at more than 300°C. And we confirmed the operation of a vertical GaN device. All the results of the GaN HEMTs are really promising to realize high performance and small size inverters for future automobiles.

Demonstration of a Nano-Enabled Space Power System

NASA Technical Reports Server (NTRS)

Raffaelle, Ryne; Hunter, Roger C.; Baker, Christopher

2017-01-01

The Nano-Enabled Space Power System will demonstrate power systems with nanomaterial-enhanced components as are placement for CubeSat power generation, transmission, and storage. Successful flights of these nano-power systems will accelerate the use of this revolutionary technology in the aerospace industry. The use of nano materials in solar cells, wire harnesses,and lithium ion batteries can increase the device performance without significantly altering the devices physical dimensions or the devices operating range (temperature,voltage, current). In many cases, the use of nanomaterials widens the viable range of operating conditions, such as increased depth of discharge of lithium ion batteries, tunable bandgaps in solar cells, and increased flexure tolerance of wire harnesses.

Voltage-Matched, Monolithic, Multi-Band-Gap Devices

DOEpatents

Wanlass, M. W.; Mascarenhas, A.

2006-08-22

Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a string of electrically connected photonic sub-cells. By carefully selecting the numbers of photonic sub-cells in the first and second layer photonic sub-cell string(s), and by carefully selecting the manner in which the sub-cells in a first and second layer photonic sub-cell string(s) are electrically connected, each of the first and second layer sub-cell strings may be made to achieve one or more substantially identical electrical characteristics.

Communications Transceivers for Venus Surface Missions

NASA Technical Reports Server (NTRS)

Force, Dale A.

2004-01-01

The high temperature of the surface of Venus poses many difficulties. Previous Venus landers have only operated for short durations before succumbing to the heat. NASA Glenn Research Center conducted a study on communications for long duration Venus surface missions. I report the findings in this presentation. Current technology allows production of communications transceivers that can operate on the surface of Venus, at temperatures above 450 C and pressures of over 90 atmospheres. While these transceivers would have to be relatively simple, without much of the advanced signal processing often used in modern transceivers, since current and near future integrated circuits cannot operate at such high temperatures, the transceivers will be able to meet the requirements of proposed Venus Surface mission. The communication bands of interest are High Frequency or Very High Frequency (HFNHF) for communication between Venus surface and airborne probes (including surface to surface and air to air), and Ultra High Frequency (UHF) to Microwave bands for communication to orbiters. For HFNHF, transceivers could use existing vacuum tube technology. The packaging of the vacuum tubes may need modification, but the internal operating structure already operates at high temperatures. Using metal vacuum structures instead of glass, allows operation at high pressure. Wide bandgap transistors and diodes may be able to replace some of the thermionic components. VHF communications would be useful for line-of- sight operations, while HF would be useful for short-wave type communications using the Venusian ionosphere. UHF and microwave communications use magnetically focused thermionic devices, such as traveling wave tubes (TWTs), magnetron (M-type) amplifiers, and klystrons for high power amplifiers, and backward wave oscillators (BWOs) and reflex klystrons for oscillators. Permanent magnets are already in use in industry that can operate at 500 C. These magnets could focus electron beam tubes on the surface of Venus. While microwave windows will need to be designed for the high pressure, diamond windows have already been demonstrated, so high-pressure microwave windows can be designed and built. Thus, all of these devices could be useful for Venus surface missions. Current electronic power conditioners to supply the high voltages used in these microwave devices cannot operate at high temperatures, but earlier electronic power conditioners that used vacuum tubes can be modified to work at high temperature. Evaluating the various devices in this study, the M-type traveling wave tube (where a traveling wave structure is used in a crossed-field device, similar to the Amplitron used on the Apollo missions) stood out for the high power amplifier since it requires a single high voltage, simplifying the power supply design. Since the receiver amplifier is a low power amplifier, the loss of efficiency in linear beam devices without a depressed collector (and thus needing a single high voltage) is not important; a low noise TWT is a possible solution. Before solid-state microwave amplifiers were available, such TWTs were built with a 1-2 dB noise figure. A microwave triode or transistor made from a wide bandgap material may be preferable, if available. Much of the development work needed for Venusian communication devices will need to focus on the packaging of the devices, and their connections, but the technology is available to build transceivers that can operate on the surface of Venus indefinitely.

30 CFR 77.901 - Protection of low- and medium-voltage three-phase circuits.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Protection of low- and medium-voltage three... WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.901 Protection of low- and medium-voltage three-phase circuits. (a) Low- and medium-voltage circuits supplying...

30 CFR 77.901 - Protection of low- and medium-voltage three-phase circuits.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Protection of low- and medium-voltage three... WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.901 Protection of low- and medium-voltage three-phase circuits. (a) Low- and medium-voltage circuits supplying...

30 CFR 77.901 - Protection of low- and medium-voltage three-phase circuits.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Protection of low- and medium-voltage three... WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.901 Protection of low- and medium-voltage three-phase circuits. (a) Low- and medium-voltage circuits supplying...

30 CFR 77.901 - Protection of low- and medium-voltage three-phase circuits.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Protection of low- and medium-voltage three... WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.901 Protection of low- and medium-voltage three-phase circuits. (a) Low- and medium-voltage circuits supplying...

30 CFR 77.901 - Protection of low- and medium-voltage three-phase circuits.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Protection of low- and medium-voltage three... WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.901 Protection of low- and medium-voltage three-phase circuits. (a) Low- and medium-voltage circuits supplying...

Examination of the temperature dependent electronic behavior of GeTe for switching applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Champlain, James G.; Ruppalt, Laura B.; Guyette, Andrew C.

2016-06-28

The DC and RF electronic behaviors of GeTe-based phase change material switches as a function of temperature, from 25 K to 375 K, have been examined. In its polycrystalline (ON) state, GeTe behaved as a degenerate p-type semiconductor, exhibiting metal-like temperature dependence in the DC regime. This was consistent with the polycrystalline (ON) state RF performance of the switch, which exhibited low resistance S-parameter characteristics. In its amorphous (OFF) state, the GeTe presented significantly greater DC resistance that varied considerably with bias and temperature. At low biases (<1 V) and temperatures (<200 K), the amorphous GeTe low-field resistance dramatically increased, resulting in exceptionally highmore » amorphous-polycrystalline (OFF-ON) resistance ratios, exceeding 10{sup 9} at cryogenic temperatures. At higher biases and temperatures, the amorphous GeTe exhibited nonlinear current-voltage characteristics that were best fit by a space-charge limited conduction model that incorporates the effect of a defect band. The observed conduction behavior suggests the presence of two regions of localized traps within the bandgap of the amorphous GeTe, located at approximately 0.26–0.27 eV and 0.56–0.57 eV from the valence band. Unlike the polycrystalline state, the high resistance DC behavior of amorphous GeTe does not translate to the RF switch performance; instead, a parasitic capacitance associated with the RF switch geometry dominates OFF state RF transmission.« less

A new venous infusion path monitoring system utilizing electrostatic induced potential.

PubMed

Ogawa, Hidekuni; Yonezawa, Yoshiharu; Maki, Hiromichi; Caldwell, W Morton

2008-01-01

A new venous infusion pathway monitoring system has been developed for hospital and home use. The system consists of linear and digital integrated circuits and a low-power 8-bit single chip microcomputer which constantly monitors the infusion pathway intactness. A 330 kHz AC voltage, which is induced on the patient's body by electrostatic coupling from a 330 kHz pulse oscillator, can be recorded by main and reference electrodes wrapped around the infusion polyvinyl chloride tube. If the injection needle or infusion tube becomes detached, then the system detects changes in the induced AC voltages and alerts the nursing station, via the nurse call system or PHS (personal handy phone system).

Regioregular narrow-bandgap-conjugated polymers for plastic electronics

NASA Astrophysics Data System (ADS)

Ying, Lei; Huang, Fei; Bazan, Guillermo C.

2017-03-01

Progress in the molecular design and processing protocols of semiconducting polymers has opened significant opportunities for the fabrication of low-cost plastic electronic devices. Recent studies indicate that field-effect transistors and organic solar cells fabricated using narrow-bandgap regioregular polymers with translational symmetries in the direction of the backbone vector often outperform those containing analogous regiorandom polymers. This review addresses the cutting edge of regioregularity chemistry, in particular how to control the spatial distribution in the molecular structures and how this order translates to more ordered bulk morphologies. The effect of regioregularity on charge transport and photovoltaic properties is also outlined.

Three-dimensional photonic crystals created by single-step multi-directional plasma etching.

PubMed

Suzuki, Katsuyoshi; Kitano, Keisuke; Ishizaki, Kenji; Noda, Susumu

2014-07-14

We fabricate 3D photonic nanostructures by simultaneous multi-directional plasma etching. This simple and flexible method is enabled by controlling the ion-sheath in reactive-ion-etching equipment. We realize 3D photonic crystals on single-crystalline silicon wafers and show high reflectance (>95%) and low transmittance (<-15dB) at optical communication wavelengths, suggesting the formation of a complete photonic bandgap. Moreover, our method simply demonstrates Si-based 3D photonic crystals that show the photonic bandgap effect in a shorter wavelength range around 0.6 μm, where further fine structures are required.

Reactive power and voltage control strategy based on dynamic and adaptive segment for DG inverter

NASA Astrophysics Data System (ADS)

Zhai, Jianwei; Lin, Xiaoming; Zhang, Yongjun

2018-03-01

The inverter of distributed generation (DG) can support reactive power to help solve the problem of out-of-limit voltage in active distribution network (ADN). Therefore, a reactive voltage control strategy based on dynamic and adaptive segment for DG inverter is put forward to actively control voltage in this paper. The proposed strategy adjusts the segmented voltage threshold of Q(U) droop curve dynamically and adaptively according to the voltage of grid-connected point and the power direction of adjacent downstream line. And then the reactive power reference of DG inverter can be got through modified Q(U) control strategy. The reactive power of inverter is controlled to trace the reference value. The proposed control strategy can not only control the local voltage of grid-connected point but also help to maintain voltage within qualified range considering the terminal voltage of distribution feeder and the reactive support for adjacent downstream DG. The scheme using the proposed strategy is compared with the scheme without the reactive support of DG inverter and the scheme using the Q(U) control strategy with constant segmented voltage threshold. The simulation results suggest that the proposed method has a significant improvement on solving the problem of out-of-limit voltage, restraining voltage variation and improving voltage quality.

An 11-bit 200 MS/s subrange SAR ADC with low-cost integrated reference buffer

NASA Astrophysics Data System (ADS)

He, Xiuju; Gu, Xian; Li, Weitao; Jiang, Hanjun; Li, Fule; Wang, Zhihua

2017-10-01

This paper presents an 11-bit 200 MS/s subrange SAR ADC with an integrated reference buffer in 65 nm CMOS. The proposed ADC employs a 3.5-bit flash ADC for coarse conversion, and a compact timing scheme at the flash/SAR boundary to speed up the conversion. The flash decision is used to control charge compensating for the reference voltage to reduce its input-dependent fluctuation. Measurement results show that the fabricated ADC has achieved significant improvement by applying the reference charge compensation. In addition, the ADC achieves a maximum signal-to-noise-and-distortion ratio of 59.3 dB at 200 MS/s. It consumes 3.91 mW from a 1.2 V supply, including the reference buffer. Project supported by the Zhongxing Telecommunication Equipment Corporation and Beijing Microelectronics Technology Institute.

Digital automatic gain amplifier

NASA Technical Reports Server (NTRS)

Holley, L. D.; Ward, J. O. (Inventor)

1978-01-01

A circuit is described for adjusting the amplitude of a reference signal to a predetermined level so as to permit subsequent data signals to be interpreted correctly. The circuit includes an operational amplifier having a feedback circuit connected between an output terminal and an input terminal; a bank of relays operably connected to a plurality of resistors; and a comparator comparing an output voltage of the amplifier with a reference voltage and generating a compared signal responsive thereto. Means is provided for selectively energizing the relays according to the compared signal from the comparator until the output signal from the amplifier equals to the reference signal. A second comparator is provided for comparing the output of the amplifier with a second voltage source so as to illuminate a lamp when the output signal from the amplifier exceeds the second voltage.

Sequential power-up circuit

DOEpatents

Kronberg, J.W.

1992-06-02

A sequential power-up circuit for starting several electrical load elements in series to avoid excessive current surge, comprising a voltage ramp generator and a set of voltage comparators, each comparator having a different reference voltage and interfacing with a switch that is capable of turning on one of the load elements. As the voltage rises, it passes the reference voltages one at a time and causes the switch corresponding to that voltage to turn on its load element. The ramp is turned on and off by a single switch or by a logic-level electrical signal. The ramp rate for turning on the load element is relatively slow and the rate for turning the elements off is relatively fast. Optionally, the duration of each interval of time between the turning on of the load elements is programmable. 2 figs.

10 CFR 431.196 - Energy conservation standards and their effective dates.

Code of Federal Regulations, 2011 CFR

2011-01-01

... at the following reference conditions: (1) for no-load losses, at the temperature of 20 °C, and (2) for load-losses, at the temperature of 75 °C and 35 percent of nameplate load. (Source: Table 4-2 of... January 1, 2007, shall be no less than that required for their kVA rating in the table below. Low-voltage...

10 CFR 431.196 - Energy conservation standards and their effective dates.

Code of Federal Regulations, 2013 CFR

2013-01-01

... at the following reference conditions: (1) for no-load losses, at the temperature of 20 °C, and (2) for load-losses, at the temperature of 75 °C and 35 percent of nameplate load. (Source: Table 4-2 of... January 1, 2007, shall be no less than that required for their kVA rating in the table below. Low-voltage...

10 CFR 431.196 - Energy conservation standards and their effective dates.

Code of Federal Regulations, 2012 CFR

2012-01-01

... at the following reference conditions: (1) for no-load losses, at the temperature of 20 °C, and (2) for load-losses, at the temperature of 75 °C and 35 percent of nameplate load. (Source: Table 4-2 of... January 1, 2007, shall be no less than that required for their kVA rating in the table below. Low-voltage...

10 CFR 431.196 - Energy conservation standards and their effective dates.

Code of Federal Regulations, 2010 CFR

2010-01-01

... at the following reference conditions: (1) for no-load losses, at the temperature of 20 °C, and (2) for load-losses, at the temperature of 75 °C and 35 percent of nameplate load. (Source: Table 4-2 of... January 1, 2007, shall be no less than that required for their kVA rating in the table below. Low-voltage...

Radiation Response of Emerging FeRAM Technology

NASA Technical Reports Server (NTRS)

Nguyen, D. N.; Scheick, L. Z.

2001-01-01

The test results of measurements performed on two different sizes of ferroelectric random access memory (FeRAM) suggest the degradation is due to the low radiation tolerance of sense amplifiers and reference voltage generators which are based on commercial complementary metal oxide semiconductor (CMOS) technology. This paper presents total ionizing dose (TID) testing of 64Kb Ramtron FM1608 and 256Kb Ramtron FM1808.

System and methods for reducing harmonic distortion in electrical converters

DOEpatents

Kajouke, Lateef A; Perisic, Milun; Ransom, Ray M

2013-12-03

Systems and methods are provided for delivering energy using an energy conversion module. An exemplary method for delivering energy from an input interface to an output interface using an energy converison module coupled between the input interface and the output interface comprises the steps of determining an input voltage reference for the input interface based on a desired output voltage and a measured voltage and the output interface, determining a duty cycle control value based on a ratio of the input voltage reference and the measured voltage, operating one or more switching elements of the energy conversion module to deliver energy from the input interface to the output interface to the output interface with a duty cycle influenced by the dute cycle control value.

InGaAs concentrator cells for laser power converters and tandem cells

NASA Technical Reports Server (NTRS)

Wojtczuk, S.; Vernon, S.; Gagnon, E.

1993-01-01

In(0.53)Ga(0.47)As N-on-P concentrator cells were made as part of an effort to develop 1.315 micron laser power converters. The 1.315 micron laser power conversion efficiency was estimated as 29.4 percent (at 5.57 W/cm(sup 2)) based on an 86 percent measured external quantum efficiency at 1.315 microns, and a measured open circuit voltage (484 mV), and fill-factor (67 percent) at the equivalent AM0 short-circuit photocurrent (5.07 A/cm(sup 2)). A 13.5 percent percent AMO efficiency was achieved at 89 suns and 25 C. Measured one-sun and 100-sun AMO efficiency, log I-V analysis, and quantum efficiency are presented for InGaAs cells with and without InP windows to passivate the front surface. Windowed cells performed better at concentration than windowless cells. Lattice mismatch between InGaAs epilayers and InP substrate was less than 800 ppm. Theoretical efficiency is estimated for 1.315 microns laser power converters versus the bandgap energy. Adding aluminum to InGaAs to form In(x)Al(y)Ga(1-x-y)As is presented as a way to achieve an optimal bandgap for 1.315 microns laser power conversion.

Beam deceleration for block-face scanning electron microscopy of embedded biological tissue.

PubMed

Ohta, Keisuke; Sadayama, Shoji; Togo, Akinobu; Higashi, Ryuhei; Tanoue, Ryuichiro; Nakamura, Kei-ichiro

2012-04-01

The beam deceleration (BD) method for scanning electron microscopes (SEM) also referred to as "retarding" was applied to back-scattered electron (BSE) imaging of the flat block face of a resin embedded biological specimen under low accelerating voltage and low beam current conditions. BSE imaging was performed with 0-4 kV of BD on en bloc stained rat hepatocyte. BD drastically enhanced the compositional contrast of the specimen and also improved the resolution at low landing energy levels (1.5-3 keV) and a low beam current (10 pA). These effects also functioned in long working distance observation, however, stage tilting caused uncorrectable astigmatism in BD observation. Stage tilting is mechanically required for a FIB/SEM, so we designed a novel specimen holder to minimize the unfavorable tilting effect. The FIB/SEM 3D reconstruction using the new holder showed a reasonable contrast and resolution high enough to analyze individual cell organelles and also the mitochondrial cristae structures (~5 nm) of the hepatocyte. These results indicate the advantages of BD for block face imaging of biological materials such as cells and tissues under low-voltage and low beam current conditions. Copyright © 2011 Elsevier Ltd. All rights reserved.

A Low Power 2.4 GHz CMOS Mixer Using Forward Body Bias Technique for Wireless Sensor Network

NASA Astrophysics Data System (ADS)

Yin, C. J.; Murad, S. A. Z.; Harun, A.; Ramli, M. M.; Zulkifli, T. Z. A.; Karim, J.

2018-03-01

Wireless sensor network (WSN) is a highly-demanded application since the evolution of wireless generation which is often used in recent communication technology. A radio frequency (RF) transceiver in WSN should have a low power consumption to support long operating times of mobile devices. A down-conversion mixer is responsible for frequency translation in a receiver. By operating a down-conversion mixer at a low supply voltage, the power consumed by WSN receiver can be greatly reduced. This paper presents a development of low power CMOS mixer using forward body bias technique for wireless sensor network. The proposed mixer is implemented using CMOS 0.13 μm Silterra technology. The forward body bias technique is adopted to obtain low power consumption. The simulation results indicate that a low power consumption of 0.91 mW is achieved at 1.6 V supply voltage. Moreover, the conversion gain (CG) of 21.83 dB, the noise figure (NF) of 16.51 dB and the input-referred third-order intercept point (IIP3) of 8.0 dB at 2.4 GHz are obtained. The proposed mixer is suitable for wireless sensor network.

Low QRS Voltage on Presenting Electrocardiogram Predicts Multi-vessel Disease in Anterior ST-segment Elevation Myocardial Infarction.

PubMed

Kobayashi, Akihiro; Misumida, Naoki; Aoi, Shunsuke; Kanei, Yumiko

Low QRS voltage was reported to predict adverse outcomes in acute myocardial infarction in the pre-thrombolytic era. However, the association between low voltage and angiographic findings has not been fully addressed. We performed a retrospective analysis of patients with anterior ST-segment elevation myocardial infarction (STEMI). Low QRS voltage was defined as either peak to peak QRS complex voltage <1.0mV in all precordial leads or <0.5mV in all limb leads. Among 190 patients, 37 patients (19%) had low voltage. Patients with low voltage had a higher rate of multi-vessel disease (MVD) (76% vs. 52%, p=0.01). Patients with low voltage were more likely to undergo coronary artery bypass grafting (CABG) during admission (11% vs. 2%, p=0.028). Low voltage was an independent predictor for MVD (OR 2.50; 95% CI 1.12 to 6.03; p=0.032). Low QRS voltage was associated with MVD and in-hospital CABG in anterior STEMI. Copyright © 2017 Elsevier Inc. All rights reserved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Samuel; Baranov, Dmitry; Ryu, Jisu

Pump-probe polarization anisotropy measurements with 15 fs pulses are employed to investigate the electronic structure of PbS quantum dots. Here, the initial anisotropy at the bandgap is anomalously low (<0.1) and suggests large electronic couplings.

30 CFR 75.902 - Low- and medium-voltage ground check monitor circuits.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low- and medium-voltage ground check monitor... Medium-Voltage Alternating Current Circuits § 75.902 Low- and medium-voltage ground check monitor circuits. [Statutory Provisions] On or before September 30, 1970, low- and medium-voltage resistance...

30 CFR 75.902 - Low- and medium-voltage ground check monitor circuits.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Low- and medium-voltage ground check monitor... Medium-Voltage Alternating Current Circuits § 75.902 Low- and medium-voltage ground check monitor circuits. [Statutory Provisions] On or before September 30, 1970, low- and medium-voltage resistance...

30 CFR 75.902 - Low- and medium-voltage ground check monitor circuits.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Low- and medium-voltage ground check monitor... Medium-Voltage Alternating Current Circuits § 75.902 Low- and medium-voltage ground check monitor circuits. [Statutory Provisions] On or before September 30, 1970, low- and medium-voltage resistance...

30 CFR 75.902 - Low- and medium-voltage ground check monitor circuits.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Low- and medium-voltage ground check monitor... Medium-Voltage Alternating Current Circuits § 75.902 Low- and medium-voltage ground check monitor circuits. [Statutory Provisions] On or before September 30, 1970, low- and medium-voltage resistance...

30 CFR 75.902 - Low- and medium-voltage ground check monitor circuits.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Low- and medium-voltage ground check monitor... Medium-Voltage Alternating Current Circuits § 75.902 Low- and medium-voltage ground check monitor circuits. [Statutory Provisions] On or before September 30, 1970, low- and medium-voltage resistance...

Codoping method for the fabrication of low-resistivity wide band-gap semiconductors in p-type GaN, p-type AlN and n-type diamond: prediction versus experiment

NASA Astrophysics Data System (ADS)

Katayama-Yoshida, H.; Nishimatsu, T.; Yamamoto, T.; Orita, N.

2001-10-01

We review our new valence control method of a co-doping for the fabrication of low-resistivity p-type GaN, p-type AlN and n-type diamond. The co-doping method is proposed based upon ab initio electronic structure calculation in order to solve the uni-polarity and the compensation problems in the wide band-gap semiconductors. In the co-doping method, we dope both the acceptors and donors at the same time by forming the meta-stable acceptor-donor-acceptor complexes for the p-type or donor-acceptor-donor complexes for the n-type under thermal non-equilibrium crystal growth conditions. We propose the following co-doping method to fabricate the low-resistivity wide band-gap semiconductors; p-type GaN: [Si + 2 Mg (or Be)], [H + 2 Mg (or Be)], [O + 2 Mg (or Be)], p-type AlN: [O + 2 C] and n-type diamond: [B + 2 N], [H + S], [H + 2 P]. We compare our prediction of the co-doping method with the recent successful experiments to fabricate the low-resistivity p-type GaN, p-type AlN and n-type diamond. We show that the co-doping method is the efficient and universal doping method by which to avoid carrier compensation with an increase of the solubility of the dopant, to increase the activation rate by decreasing the ionization energy of acceptors and donors, and to increase the mobility of the carrier.

The development of efficient X-ray conversion material for digital mammography

NASA Astrophysics Data System (ADS)

Oh, K.; Shin, J.; Kim, S.; Lee, Y.; Jeon, S.; Kim, J.; Nam, S.

2012-02-01

In this study, an experimental method based on theory is used to develop photoconductor that can replace the a-Se currently used as X-ray conversion layer in digital mammography. This is necessary because a-Se produced by the commercial fabrication method, of physical vapor deposition, has exhibited several problems when applied to digital mammography: instability due to crystallization and defect expansion due to high operating voltages, which is called the aging effect. Therefore, our work focused on developing a method of fabricating X-ray conversion films that do not suffer from crystallization and X-ray damage and optimizing the factors affecting the properties of the candidate photoconductors in order to acquire sufficient electrical signals to detect minute calcifications. The photoconductors were initially selected after the requirements for X-ray conversion materials, such as high atomic absorption, density, band-gap energy, work function, and resistivity, were examined. We selected HgI2, PbI2, and PbO because of their basic properties. Next, we experimentally investigated the performance of film samples fabricated by sedimentation and screen printing instead of physical vapor deposition. The structure of the X-ray conversion films (e.g., the thickness, electrodes, and blocking layer) were optimized for the application of a relatively low voltage to the X-ray conversion layer. The performance of the films were morphologically and electrically evaluated under mammography X-ray exposure conditions, and compared with those of a-Se films produced by physical vapor deposition. PbO appeared to be the most suitable alternative material because its electrical properties, such as the dark current, sensitivity, and signal-to-noise ratio (SNR), did not reveal the X-ray damage problem, and thus were maintained after repeated exposure to X-rays. Although PbO showed low sensitivity to X-ray exposure, its SNR was superior to that of the other materials, which is expected to improve its detective quantum efficiency, one of the factors used in evaluating images acquired by digital mammography.

Surface atomic structure characterization of SnSe and black phosphorus using selected area uLEED-IV via LEEM

NASA Astrophysics Data System (ADS)

Dai, Zhongwei; Grady, Maxwell; Yu, Jiexiang; Zang, Jiadong; Pohl, Karsten; Jin, Wencan; Kim, Young Duck; Hone, James; Dadap, Jerry; Osgood, Richard; Sadowski, Jerzy; Vishwanath, Suresh; Xing, Huili

Selected area diffraction intensity-voltage (μLEED-IV) analysis via low energy electron microscopy (LEEM) has the combined functionality of atomic surface structure determination and μm area selectivity, making it ideal for structural investigations of 2-D materials. SnSe thin films have been predicted and observed to be topological crystalline insulators. Previous studies suggested that SnSe has a preferred Se-terminated surface configuration. Using μLEED-IV, we determined that SnSe has, on the contrary, a stable Sn termination. This surface is stabilized through an oscillatory interlayer relaxation, which agrees with previous DFT predictions. Black phosphorus (BP) has an intrinsic layer-dependent bandgap ranging from 0.3 eV to 2 eV. Previous STM and DFT studies suggested BP surfaces have a buckling of 0.02 Å to 0.06 Å. We experimentally determined that the surface buckling of BP to be near 0.2 Å. We further propose, using DFT calculations, that this large surface buckling is induced by the presence of surface defects. The influence of this surface buckling on the electronic structures of BP is under investigation.

High-performance, lattice-mismatched InGaAs/InP monolithic interconnected modules (MIMs)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fatemi, Navid S.; Wilt, David M.; Hoffman, Richard W., Jr.

1998-10-01

High performance, lattice-mismatched p/n InGaAs/lnP monolithic interconnected module (MIM) structures were developed for thermophotovoltaic (TPV) applications. A MIM device consists of several individual InGaAs photovoltaic (PV) cells series-connected on a single semi-insulating (S.I.) InP substrate. Both interdigitated and conventional (i.e., non-interdigitated) MIMs were fabricated. The energy bandgap (Eg) for these devices was 0.60 eV. A compositionally step-graded InPAs buffer was used to accommodate a lattice mismatch of 1.1% between the active InGaAs cell structure and the InP substrate. 1x1-cm, 15-cell, 0.60-eV MIMs demonstrated an open-circuit voltage (Voc) of 5.2 V (347 mV per cell) and a fill factor of 68.6%more » at a short-circuit current density (Jsc) of 2.0 A/cm{sup 2}, under flashlamp testing. The reverse saturation current density (Jo) was 1.6x10{sup {minus}6} A/cm{sup 2}. Jo values as low as 4.1x10{sup {minus}7} A/cm{sup 2} were also observed with a conventional planar cell geometry.« less

Ultrathin Layered SnSe Nanoplates for Low Voltage, High-Rate, and Long-Life Alkali-Ion Batteries.

PubMed

Wang, Wei; Li, Peihao; Zheng, Henry; Liu, Qiao; Lv, Fan; Wu, Jiandong; Wang, Hao; Guo, Shaojun

2017-12-01

2D electrode materials with layered structures have shown huge potential in the fields of lithium- and sodium-ion batteries. However, their poor conductivity limits the rate performance and cycle stability of batteries. Herein a new colloid chemistry strategy is reported for making 2D ultrathin layered SnSe nanoplates (SnSe NPs) for achieving more efficient alkali-ion batteries. Due to the effect of weak Van der Waals forces, each semiconductive SnSe nanoplate stacks on top of each other, which can facilitate the ion transfer and accommodate volume expansion during the charge and discharge process. This unique structure as well as the narrow-bandgap semiconductor property of SnSe simultaneously meets the requirements of achieving fast ionic and electronic conductivities for alkali-ion batteries. They exhibit high capacity of 463.6 mAh g -1 at 0.05 A g -1 for Na-ion batteries and 787.9 mAh g -1 at 0.2 A g -1 for Li-ion batteries over 300 cycles, and also high stability for alkali-ion batteries. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Charge Carrier Conduction Mechanism in PbS Quantum Dot Solar Cells: Electrochemical Impedance Spectroscopy Study.

PubMed

Wang, Haowei; Wang, Yishan; He, Bo; Li, Weile; Sulaman, Muhammad; Xu, Junfeng; Yang, Shengyi; Tang, Yi; Zou, Bingsuo

2016-07-20

With its properties of bandgap tunability, low cost, and substrate compatibility, colloidal quantum dots (CQDs) are becoming promising materials for optoelectronic applications. Additionally, solution-processed organic, inorganic, and hybrid ligand-exchange technologies have been widely used in PbS CQDs solar cells, and currently the maximum certified power conversion efficiency of 9.9% has been reported by passivation treatment of molecular iodine. Presently, there are still some challenges, and the basic physical mechanism of charge carriers in CQDs-based solar cells is not clear. Electrochemical impedance spectroscopy is a monitoring technology for current by changing the frequency of applied alternating current voltage, and it provides an insight into its electrical properties that cannot be measured by direct current testing facilities. In this work, we used EIS to analyze the recombination resistance, carrier lifetime, capacitance, and conductivity of two typical PbS CQD solar cells Au/PbS-TBAl/ZnO/ITO and Au/PbS-EDT/PbS-TBAl/ZnO/ITO, in this way, to better understand the charge carriers conduction mechanism behind in PbS CQD solar cells, and it provides a guide to design high-performance quantum-dots solar cells.