Overview of emerging nonvolatile memory technologies.

PubMed

Meena, Jagan Singh; Sze, Simon Min; Chand, Umesh; Tseng, Tseung-Yuen

2014-01-01

Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new class of memory technologies and scaling of scientific procedures based on an investigation of recent progress in advanced Flash memory devices.

Integrated information storage and transfer with a coherent magnetic device

PubMed Central

Jia, Ning; Banchi, Leonardo; Bayat, Abolfazl; Dong, Guangjiong; Bose, Sougato

2015-01-01

Quantum systems are inherently dissipation-less, making them excellent candidates even for classical information processing. We propose to use an array of large-spin quantum magnets for realizing a device which has two modes of operation: memory and data-bus. While the weakly interacting low-energy levels are used as memory to store classical information (bits), the high-energy levels strongly interact with neighboring magnets and mediate the spatial movement of information through quantum dynamics. Despite the fact that memory and data-bus require different features, which are usually prerogative of different physical systems – well isolation for the memory cells, and strong interactions for the transmission – our proposal avoids the notorious complexity of hybrid structures. The proposed mechanism can be realized with different setups. We specifically show that molecular magnets, as the most promising technology, can implement hundreds of operations within their coherence time, while adatoms on surfaces probed by a scanning tunneling microscope is a future possibility. PMID:26347152

Vertical bloch line memory

NASA Technical Reports Server (NTRS)

Katti, R.; Wu, J.; Stadler, H.

1990-01-01

Vertical Bloch Line (VBL) memory is a recently conceived, integrated, solid-state, block-access, VLSI memory which offers the potential of 1Gbit/sq cm real storage density, gigabit per second data rates, and sub-millisecond average access times simultaneously at relatively low mass, volume, and power values when compared to alternative technologies. VBL's are micromagnetic structures within magnetic domain walls which can be manipulated using magnetic fields from integrated conductors. The presence or absence of VBL pairs are used to store binary information. At present, efforts are being directed at developing a single-chip memory using 25Mbit/sq cm technology in magnetic garnet material which integrates, at a single operating point, the writing, storage, reading, and amplification functions needed in a memory. This paper describes the current design architecture, functional elements, and supercomputer simulation results which are used to assist the design process. The current design architecture uses three metal layers, two ion implantation steps for modulating the thickness of the magnetic layer, one ion implantation step for assisting propagation in the major line track, one NiFe soft magnetic layer, one CoPt hard magnetic layer, and one reflective Cr layer for facilitating magneto-optic observation of magnetic structure. Data are stored in a series of elongated magnetic domains, called stripes, which serve as storage sites for arrays of VBL pairs. The ends of these stripes are placed near conductors which serve as VBL read/write gates. A major line track is present to provide a source and propagation path for magnetic bubbles. Writing and reading, respectively, are achieved by converting magnetic bubbles to VBL's and vice versa. The output function is effected by stretching a magnetic bubble and detecting it magnetoresistively. Experimental results from the past design cycle created four design goals for the current design cycle. First, the bias field ranges for the stripes and the major line needed to be matched. Second, the magnetic field barrier between the stripe and the read/write gates needed to be reduced. Third, current conductor routing needed to be improved to reduce occurrences of open-circuiting, short-circuiting, and eddy-current shielding. Fourth, a modified Co-alloy was needed with an increased coercivity and controlled magnetization to allow VBL stabilization to occur without affecting stripe stability.

Spin transport and spin torque in antiferromagnetic devices

DOE PAGES

Zelezny, J.; Wadley, P.; Olejnik, K.; ...

2018-03-02

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, whichmore » could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.« less

Spin transport and spin torque in antiferromagnetic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zelezny, J.; Wadley, P.; Olejnik, K.

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, whichmore » could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.« less

Spin transport and spin torque in antiferromagnetic devices

NASA Astrophysics Data System (ADS)

Železný, J.; Wadley, P.; Olejník, K.; Hoffmann, A.; Ohno, H.

2018-03-01

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets, which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here, we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum-mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.

Magnetic Field-Induced Phase Transformation in Magnetic Shape Memory Alloys with High Actuation Stress and Work Output

DTIC Science & Technology

2010-05-03

Mechanisms for Advanced Properties in Phase Transforming Materials , Materials Science & Technology 2009 Conference, October 25-29, 2009, Pittsburgh, PA...Advanced Properties in Phase Transforming Materials , Materials Science & Technology 2009 Conference, October 25-29, 2009, Pittsburgh, PA, 2009. 11...observed materials behavior. Indeed, measured materials properties were found not to be the exact indication of the materials real response

The future of memory

NASA Astrophysics Data System (ADS)

Marinella, M.

In the not too distant future, the traditional memory and storage hierarchy of may be replaced by a single Storage Class Memory (SCM) device integrated on or near the logic processor. Traditional magnetic hard drives, NAND flash, DRAM, and higher level caches (L2 and up) will be replaced with a single high performance memory device. The Storage Class Memory paradigm will require high speed (< 100 ns read/write), excellent endurance (> 1012), nonvolatility (retention > 10 years), and low switching energies (< 10 pJ per switch). The International Technology Roadmap for Semiconductors (ITRS) has recently evaluated several potential candidates SCM technologies, including Resistive (or Redox) RAM, Spin Torque Transfer RAM (STT-MRAM), and phase change memory (PCM). All of these devices show potential well beyond that of current flash technologies and research efforts are underway to improve the endurance, write speeds, and scalabilities to be on-par with DRAM. This progress has interesting implications for space electronics: each of these emerging device technologies show excellent resistance to the types of radiation typically found in space applications. Commercially developed, high density storage class memory-based systems may include a memory that is physically radiation hard, and suitable for space applications without major shielding efforts. This paper reviews the Storage Class Memory concept, emerging memory devices, and possible applicability to radiation hardened electronics for space.

Exploration of perpendicular magnetic anisotropy material system for application in spin transfer torque - Random access memory

NASA Astrophysics Data System (ADS)

Natarajarathinam, Anusha

Perpendicular magnetic anisotropy (PMA) materials have unique advantages when used in magnetic tunnel junctions (MTJ) which are the most critical part of spin-torque transfer random access memory devices (STT-RAMs) that are being researched intensively as future non-volatile memory technology. They have high magnetoresistance which improves their sensitivity. The STT-RAM has several advantages over competing technologies, for instance, low power consumption, non-volatility, ultra-fast read and write speed and high endurance. In personal computers, it can replace SRAM for high-speed applications, Flash for non-volatility, and PSRAM and DRAM for high-speed program execution. The main aim of this research is to identify and optimize the best perpendicular magnetic anisotropy (PMA) material system for application to STT-RAM technology. Preliminary search for perpendicular magnetic anisotropy (PMA) materials for pinned layer for MTJs started with the exploration and optimization of crystalline alloys such as Co50Pd50 alloy, Mn50Al50 and amorphous alloys such as Tb21Fe72Co7 and are first presented in this work. Further optimization includes the study of Co/[Pd/Pt]x multilayers (ML), and the development of perpendicular synthetic antiferromagnets (SAF) utilizing these multilayers. Focused work on capping and seed layers to evaluate interfacial perpendicular anisotropy in free layers for pMTJs is then discussed. Optimization of the full perpendicular magnetic tunnel junction (pMTJ) includes the CoFeB/MgO/CoFeB trilayer coupled to a pinned/pinning layer with perpendicular Co/[Pd/Pt]x SAF and a thin Ta seeded CoFeB free layer. Magnetometry, simulations, annealing studies, transport measurements and TEM analysis on these samples will then be presented.

Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design

NASA Astrophysics Data System (ADS)

Hoffman, Jason D.; Wu, Stephen M.; Kirby, Brian J.; Bhattacharya, Anand

2018-04-01

Antiferromagnets (AFMs) have recently gathered a large amount of attention as a potential replacement for ferromagnets (FMs) in spintronic devices due to their lack of stray magnetic fields, invisibility to external magnetic probes, and faster magnetization dynamics. Their development into a practical technology, however, has been hampered by the small number of materials where the antiferromagnetic state can be both controlled and read out. We show that by relaxing the strict criterion on pure antiferromagnetism, we can engineer an alternative class of magnetic materials that overcome these limitations. This is accomplished by stabilizing a noncollinear magnetic phase in LaNiO3 /La2 /3Sr1 /3MnO3 superlattices. This state can be continuously tuned between AFM and FM coupling through varying the superlattice spacing, strain, applied magnetic field, or temperature. By using this alternative "knob" to tune magnetic ordering, we take a nanoscale materials-by-design approach to engineering ferromagneticlike controllability into antiferromagnetic synthetic magnetic structures. This approach can be used to trade-off between the favorable and unfavorable properties of FMs and AFMs when designing realistic resistive antiferromagnetic memories. We demonstrate a memory device in one such superlattice, where the magnetic state of the noncollinear antiferromagnet is reversibly switched between different orientations using a small magnetic field and read out in real time with anisotropic magnetoresistance measurements.

Shaping nanoscale magnetic domain memory in exchange-coupled ferromagnets by field cooling.

PubMed

Chesnel, Karine; Safsten, Alex; Rytting, Matthew; Fullerton, Eric E

2016-06-01

The advance of magnetic nanotechnologies relies on detailed understanding of nanoscale magnetic mechanisms in materials. Magnetic domain memory (MDM), that is, the tendency for magnetic domains to repeat the same pattern during field cycling, is important for magnetic recording technologies. Here we demonstrate MDM in [Co/Pd]/IrMn films, using coherent X-ray scattering. Under illumination, the magnetic domains in [Co/Pd] produce a speckle pattern, a unique fingerprint of their nanoscale configuration. We measure MDM by cross-correlating speckle patterns throughout magnetization processes. When cooled below its blocking temperature, the film exhibits up to 100% MDM, induced by exchange-coupling with the underlying IrMn layer. The degree of MDM drastically depends on cooling conditions. If the film is cooled under moderate fields, MDM is high throughout the entire magnetization loop. If the film is cooled under nearly saturating field, MDM vanishes, except at nucleation and saturation. Our findings show how to fully control the occurrence of MDM by field cooling.

Shaping nanoscale magnetic domain memory in exchange-coupled ferromagnets by field cooling

DOE PAGES

Chesnel, Karine; Safsten, Alex; Rytting, Matthew; ...

2016-06-01

The advance of magnetic nanotechnologies relies on detailed understanding of nanoscale magnetic mechanisms in materials. Magnetic domain memory (MDM), that is, the tendency for magnetic domains to repeat the same pattern during field cycling, is important for magnetic recording technologies. Here we demonstrate MDM in [Co/Pd]/IrMn films, using coherent X-ray scattering. Under illumination, the magnetic domains in [Co/Pd] produce a speckle pattern, a unique fingerprint of their nanoscale configuration. We measure MDM by cross-correlating speckle patterns throughout magnetization processes. When cooled below its blocking temperature, the film exhibits up to 100% MDM, induced by exchange-coupling with the underlying IrMn layer.more » The degree of MDM drastically depends on cooling conditions. If the film is cooled under moderate fields, MDM is high throughout the entire magnetization loop. Lastly, if the film is cooled under nearly saturating field, MDM vanishes, except at nucleation and saturation. Our findings show how to fully control the occurrence of MDM by field cooling.« less

Shaping nanoscale magnetic domain memory in exchange-coupled ferromagnets by field cooling

PubMed Central

Chesnel, Karine; Safsten, Alex; Rytting, Matthew; Fullerton, Eric E.

2016-01-01

The advance of magnetic nanotechnologies relies on detailed understanding of nanoscale magnetic mechanisms in materials. Magnetic domain memory (MDM), that is, the tendency for magnetic domains to repeat the same pattern during field cycling, is important for magnetic recording technologies. Here we demonstrate MDM in [Co/Pd]/IrMn films, using coherent X-ray scattering. Under illumination, the magnetic domains in [Co/Pd] produce a speckle pattern, a unique fingerprint of their nanoscale configuration. We measure MDM by cross-correlating speckle patterns throughout magnetization processes. When cooled below its blocking temperature, the film exhibits up to 100% MDM, induced by exchange-coupling with the underlying IrMn layer. The degree of MDM drastically depends on cooling conditions. If the film is cooled under moderate fields, MDM is high throughout the entire magnetization loop. If the film is cooled under nearly saturating field, MDM vanishes, except at nucleation and saturation. Our findings show how to fully control the occurrence of MDM by field cooling. PMID:27248368

Nanoscale superconducting memory based on the kinetic inductance of asymmetric nanowire loops

NASA Astrophysics Data System (ADS)

Murphy, Andrew; Averin, Dmitri V.; Bezryadin, Alexey

2017-06-01

The demand for low-dissipation nanoscale memory devices is as strong as ever. As Moore’s law is staggering, and the demand for a low-power-consuming supercomputer is high, the goal of making information processing circuits out of superconductors is one of the central goals of modern technology and physics. So far, digital superconducting circuits could not demonstrate their immense potential. One important reason for this is that a dense superconducting memory technology is not yet available. Miniaturization of traditional superconducting quantum interference devices is difficult below a few micrometers because their operation relies on the geometric inductance of the superconducting loop. Magnetic memories do allow nanometer-scale miniaturization, but they are not purely superconducting (Baek et al 2014 Nat. Commun. 5 3888). Our approach is to make nanometer scale memory cells based on the kinetic inductance (and not geometric inductance) of superconducting nanowire loops, which have already shown many fascinating properties (Aprili 2006 Nat. Nanotechnol. 1 15; Hopkins et al 2005 Science 308 1762). This allows much smaller devices and naturally eliminates magnetic-field cross-talk. We demonstrate that the vorticity, i.e., the winding number of the order parameter, of a closed superconducting loop can be used for realizing a nanoscale nonvolatile memory device. We demonstrate how to alter the vorticity in a controlled fashion by applying calibrated current pulses. A reliable read-out of the memory is also demonstrated. We present arguments that such memory can be developed to operate without energy dissipation.

A novel architecture of non-volatile magnetic arithmetic logic unit using magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Guo, Wei; Prenat, Guillaume; Dieny, Bernard

2014-04-01

Complementary metal-oxide-semiconductor (CMOS) technology is facing increasingly difficult obstacles such as power consumption and interconnection delay. Novel hybrid technologies and architectures are being investigated with the aim to circumvent some of these limits. In particular, hybrid CMOS/magnetic technology based on magnetic tunnel junctions (MTJs) is considered as a very promising approach thanks to the full compatibility of MTJs with CMOS technology. By tightly merging the conventional electronics with magnetism, both logic and memory functions can be implemented in the same device. As a result, non-volatility is directly brought into logic circuits, yielding significant improvement of device performances and new functionalities as well. We have conceived an innovative methodology to construct non-volatile magnetic arithmetic logic units (MALUs) combining spin-transfer torque MTJs with MOS transistors. The present 4-bit MALU utilizes 4 MTJ pairs to store its operation code (opcode). Its operations and performances have been confirmed and evaluated through electrical simulations.

Demonstration of the Potential of Magnetic Tunnel Junctions for a Universal RAM Technology

NASA Astrophysics Data System (ADS)

Gallagher, William J.

2000-03-01

Over the past four years, tunnel junctions with magnetic electrodes have emerged as promising devices for future magnetoresistive sensing and for information storage. This talk will review advances in these devices, focusing particularly on the use of magnetic tunnel junctions for magnetic random access memory (MRAM). Exchange-biased versions of magnetic tunnel junctions (MTJs) in particular will be shown to have useful properties for forming magnetic memory storage elements in a novel cross-point architecture. Exchange-biased MTJ elements have been made with areas as small as 0.1 square microns and have shown magnetoresistance values exceeding 40 The potential of exchange-biased MTJs for MRAM has been most seriously explored in a demonstration experiment involving the integration of 0.25 micron CMOS technology with a special magnetic tunnel junction "back end." The magnetic back end is based upon multi-layer magnetic tunnel junction growth technology which was developed using research-scale equipment and one-inch size substrates. For the demonstration, the CMOS wafers processed through two metal layers were cut into one-inch squares for depositions of bottom-pinned exchange-biased magnetic tunnel junctions. The samples were then processed through four additional lithographic levels to complete the circuits. The demonstration focused attention on a number of processing and device issues that were addressed successfully enough that key performance aspects of MTJ MRAM were demonstrated in 1 K bit arrays, including reads and writes in less than 10 ns and nonvolatility. While other key issues remain to be addressed, these results suggest that MTJ MRAM might simultaneously provide much of the functionality now provided separately by SRAM, DRAM, and NVRAM.

Breaking the current density threshold in spin-orbit-torque magnetic random access memory

NASA Astrophysics Data System (ADS)

Zhang, Yin; Yuan, H. Y.; Wang, X. S.; Wang, X. R.

2018-04-01

Spin-orbit-torque magnetic random access memory (SOT-MRAM) is a promising technology for the next generation of data storage devices. The main bottleneck of this technology is the high reversal current density threshold. This outstanding problem is now solved by a new strategy in which the magnitude of the driven current density is fixed while the current direction varies with time. The theoretical limit of minimal reversal current density is only a fraction (the Gilbert damping coefficient) of the threshold current density of the conventional strategy. The Euler-Lagrange equation for the fastest magnetization reversal path and the optimal current pulse is derived for an arbitrary magnetic cell and arbitrary spin-orbit torque. The theoretical limit of minimal reversal current density and current density for a GHz switching rate of the new reversal strategy for CoFeB/Ta SOT-MRAMs are, respectively, of the order of 105 A/cm 2 and 106 A/cm 2 far below 107 A/cm 2 and 108 A/cm 2 in the conventional strategy. Furthermore, no external magnetic field is needed for a deterministic reversal in the new strategy.

Overview of Probe-based Storage Technologies

NASA Astrophysics Data System (ADS)

Wang, Lei; Yang, Ci Hui; Wen, Jing; Gong, Si Di; Peng, Yuan Xiu

2016-07-01

The current world is in the age of big data where the total amount of global digital data is growing up at an incredible rate. This indeed necessitates a drastic enhancement on the capacity of conventional data storage devices that are, however, suffering from their respective physical drawbacks. Under this circumstance, it is essential to aggressively explore and develop alternative promising mass storage devices, leading to the presence of probe-based storage devices. In this paper, the physical principles and the current status of several different probe storage devices, including thermo-mechanical probe memory, magnetic probe memory, ferroelectric probe memory, and phase-change probe memory, are reviewed in details, as well as their respective merits and weakness. This paper provides an overview of the emerging probe memories potentially for next generation storage device so as to motivate the exploration of more innovative technologies to push forward the development of the probe storage devices.

Overview of Probe-based Storage Technologies.

PubMed

Wang, Lei; Yang, Ci Hui; Wen, Jing; Gong, Si Di; Peng, Yuan Xiu

2016-12-01

The current world is in the age of big data where the total amount of global digital data is growing up at an incredible rate. This indeed necessitates a drastic enhancement on the capacity of conventional data storage devices that are, however, suffering from their respective physical drawbacks. Under this circumstance, it is essential to aggressively explore and develop alternative promising mass storage devices, leading to the presence of probe-based storage devices. In this paper, the physical principles and the current status of several different probe storage devices, including thermo-mechanical probe memory, magnetic probe memory, ferroelectric probe memory, and phase-change probe memory, are reviewed in details, as well as their respective merits and weakness. This paper provides an overview of the emerging probe memories potentially for next generation storage device so as to motivate the exploration of more innovative technologies to push forward the development of the probe storage devices.

Skyrmion-skyrmion and skyrmion-edge repulsions in skyrmion-based racetrack memory

NASA Astrophysics Data System (ADS)

Zhang, Xichao; Zhao, G. P.; Fangohr, Hans; Liu, J. Ping; Xia, W. X.; Xia, J.; Morvan, F. J.

2015-01-01

Magnetic skyrmions are promising for building next-generation magnetic memories and spintronic devices due to their stability, small size and the extremely low currents needed to move them. In particular, skyrmion-based racetrack memory is attractive for information technology, where skyrmions are used to store information as data bits instead of traditional domain walls. Here we numerically demonstrate the impacts of skyrmion-skyrmion and skyrmion-edge repulsions on the feasibility of skyrmion-based racetrack memory. The reliable and practicable spacing between consecutive skyrmionic bits on the racetrack as well as the ability to adjust it are investigated. Clogging of skyrmionic bits is found at the end of the racetrack, leading to the reduction of skyrmion size. Further, we demonstrate an effective and simple method to avoid the clogging of skyrmionic bits, which ensures the elimination of skyrmionic bits beyond the reading element. Our results give guidance for the design and development of future skyrmion-based racetrack memory.

FOREWORD: Shape Memory and Related Technologies

NASA Astrophysics Data System (ADS)

Liu, Yong

2005-10-01

The International Symposium on Shape Memory and Related Technologies (SMART2004) successfully took place in Singapore from November 24 to 26, 2004. SMART2004 aimed to provide a forum for presenting and discussing recent developments in the processing, characterization, application and performance prediction of shape memory materials, particularly shape memory alloys and magnetic shape memory materials. In recent years, we have seen a surge in the research and application of shape memory materials. This is due on the one hand to the successful applications of shape memory alloys (SMAs), particularly NiTi (nitinol), in medical practices and, on the other hand, to the discovery of magnetic shape memory (MSM) materials (or, ferromagnetic shape memory alloys, FSMAs). In recent years, applications of SMAs in various engineering practices have flourished owing to the unique combination of novel properties including high power density related to shape recovery, superelasticity with tunable hysteresis, high damping capacity combined with good fatigue resistance, excellent wear resistance due to unconventional deformation mechanisms (stress-induced phase transformation and martensite reorientation), and excellent biocompatibility and anticorrosion resistance, etc. In~the case of MSMs (or FSMAs), their giant shape change in a relatively low magnetic field has great potential to supplement the traditional actuation mechanisms and to have a great impact on the world of modern technology. Common mechanisms existing in both types of materials, namely thermoelastic phase transformation, martensite domain switching and their controlling factors, are of particular interest to the scientific community. Despite some successful applications, some fundamental issues remain unsatisfactorily understood. This conference hoped to link the fundamental research to engineering practices, and to further identify remaining problems in order to further promote the applications of shape memory materials in various demanding fields. Some top researchers from Asia, Australia, Europe and USA attended the meeting and gave oral presentations on both the fundamentals and applied aspects of SMAs and MSMs. Several prominent experts have delivered invited talks on the damping capacity of SMAs (J Van Humbeeck), SMA thin films (S Miyazaki), MSMs (V Lindross and O Söderberg) and SMA microtubes (Q P Sun). At the end of the Symposium, a panel discussion on various aspects of shape memory materials was held in the Nanyang Technological University. Comments, suggestions, opinions, discussions etc from all participants are greatly appreciated and acknowledged. I would like to thank all the participants for their valuable contributions toward the success of SMART2004, and thank all the session chairpersons for making this Symposium an event full of beneficial discussions. This special issue includes some of the manuscripts submitted to SMART2004. I want to express my deep gratitude to the editorial office of the journal of Smart Materials and Structures and all the referees for their great help in producing this special issue. This symposium has received support from the Institute of Materials (East Asia) and the School of Mechanical and Aerospace Engineering of the Nanyang Technological University. The following sponsors are gratefully acknowledged: Lee Foundation (Singapore) Accelrys Instron (Singapore Pte Ltd).

Packaging of a large capacity magnetic bubble domain spacecraft recorder

NASA Technical Reports Server (NTRS)

Becker, F. J.; Stermer, R. L.

1977-01-01

A Solid State Spacecraft Data Recorder (SSDR), based on bubble domain technology, having a storage capacity of 10 to the 8th power bits, was designed and is being tested. The recorder consists of two memory modules each having 32 cells, each cell containing sixteen 100 kilobit serial bubble memory chips. The memory modules are interconnected to a Drive and Control Unit (DCU) module containing four microprocessors, 500 integrated circuits, a RAM core memory and two PROM's. The two memory modules and DCU are housed in individual machined aluminum frames, are stacked in brick fashion and through bolted to a base plate assembly which also houses the power supply.

Preliminary design for a standard 10 sup 7 bit Solid State Memory (SSM)

NASA Technical Reports Server (NTRS)

Hayes, P. J.; Howle, W. M., Jr.; Stermer, R. L., Jr.

1978-01-01

A modular concept with three separate modules roughly separating bubble domain technology, control logic technology, and power supply technology was employed. These modules were respectively the standard memory module (SMM), the data control unit (DCU), and power supply module (PSM). The storage medium was provided by bubble domain chips organized into memory cells. These cells and the circuitry for parallel data access to the cells make up the SMM. The DCU provides a flexible serial data interface to the SMM. The PSM provides adequate power to enable one DCU and one SMM to operate simultaneously at the maximum data rate. The SSM was designed to handle asynchronous data rates from dc to 1.024 Mbs with a bit error rate less than 1 error in 10 to the eight power bits. Two versions of the SSM, a serial data memory and a dual parallel data memory were specified using the standard modules. The SSM specification includes requirements for radiation hardness, temperature and mechanical environments, dc magnetic field emission and susceptibility, electromagnetic compatibility, and reliability.

Rise of Racetrack Memory! Domain Wall Spin-Orbitronics

NASA Astrophysics Data System (ADS)

Parkin, Stuart

Memory-storage devices based on the current controlled motion of a series of domain walls (DWs) in magnetic racetracks promise performance and reliability beyond that of conventional magnetic disk drives and solid state storage devices (1). Racetracks that are formed from atomically thin, perpendicularly magnetized nano-wires, interfaced with adjacent metal layers with high spin-orbit coupling, give rise to domain walls that exhibit a chiral Néel structure (2). These DWs can be moved very efficiently with current via chiral spin-orbit torques (2,3). Record-breaking current-induced DW speeds exceeding 1,000 m/sec are found in synthetic antiferromagnetic structures (3) in which the net magnetization of the DWs is tuned to almost zero, making them ``invisible''. Based on these recent discoveries, Racetrack Memory devices have the potential to operate on picosecond timescales and at densities more than 100 times greater than other memory technologies. (1) S.S.P. Parkin et al., Science 320, 5873 (2008); S.S.P. Parkin and S.-H. Yang, Nat. Nano. 10, 195 (2015). (2) K.-S. Ryu metal. Nat. Nano. 8, 527 (2013). (3) S.-H. Yang, K.-S. Ryu and S.S.P. Parkin, Nat. Nano. 10, 221 (2015). (4). S.S.P. Parkin, Phys. Rev. Lett. 67, 3598 (1991).

Testing system for ferromagnetic shape memory microactuators.

PubMed

Ganor, Y; Shilo, D; Messier, J; Shield, T W; James, R D

2007-07-01

Ferromagnetic shape memory alloys are a class of smart materials that exhibit a unique combination of large strains and fast response when exposed to magnetic field. Accordingly, these materials have significant potential in motion generation applications such as microactuators and sensors. This article presents a novel experimental system that measures the dynamic magnetomechanical behavior of microscale ferromagnetic shape memory specimens. The system is comprised of an alternating magnetic field generator (AMFG) and a mechanical loading and sensing system. The AMFG generates a dynamic magnetic field that periodically alternates between two orthogonal directions to facilitate martensitic variant switching and to remotely achieve a full magnetic actuation cycle, without the need of mechanical resetting mechanisms. Moreover, the AMFG is designed to produce a magnetic field that inhibits 180 degrees magnetization domain switching, which causes energy loss without strain generation. The mechanical loading and sensing system maintains a constant mechanical load on the measured specimen by means of a cantilever beam, while the displacement is optically monitored with a resolution of approximately 0.1 microm. Preliminary measurements using Ni(2)MnGa single crystal specimens, with a cross section of 100x100 microm(2), verified their large actuation strains and established their potential to become a material of great importance in microactuation technology.

Trends in solid state electronics, part 2

NASA Technical Reports Server (NTRS)

Gassaway, J. D.

1972-01-01

Developments in the fields of semiconductors and magnetics are surveyed. Materials, devices, theory, and fabrication technology are discussed. Important events up until the present time are reported, and events are interpreted through historical perspective. A brief analysis of forces which have driven the development of today's electronic technology and some projections of present trends are given. More detailed discussions are presented for four areas of contemporary interest: amorphous semiconductors, bubble domain devices, charge-coupled devices, and electron and ion beam techniques. Beam addressed magnetic memories are reviewed to a lesser extent.

Engineered materials for all-optical helicity-dependent magnetic switching

NASA Astrophysics Data System (ADS)

Fullerton, Eric

2014-03-01

The possibilities of manipulating magnetization without applied magnetic fields have attracted growing attention over the last fifteen years. The low-power manipulation of magnetization, preferably at ultra-short time scales, has become a fundamental challenge with implications for future magnetic information memory and storage technologies. Here we explore the optical manipulation of the magnetization of engineered materials and devices using 100 fs optical pulses. We demonstrate that all optical - helicity dependent switching (AO-HDS) can be observed not only in selected rare-earth transition-metal (RE-TM) alloy films but also in a much broader variety of materials, including alloys, multilayers, heterostructures and RE-free Co-Ir-based synthetic ferrimagnets. The discovery of AO-HDS in RE-free TM-based synthetic ferrimagnets can enable breakthroughs for numerous applications since it exploits materials that are currently used in magnetic data storage, memories and logic technologies. In addition, this materials study of AO-HDS offers valuable insight into the underlying mechanisms involved. Indeed the common denominator of the diverse structures showing AO-HDS in this study is that two ferromagnetic sub-lattices exhibit magnetization compensation (and therefore angular momentum compensation) at temperatures near or above room temperature. We are highlighting that compensation plays a major role and that this compensation can be established at the atomic level as in alloys but also over a larger nanometers scale as in the multilayers or in heterostructures. We will also discuss the potential to extend AO-HDS to new classes of magnetic materials. This work was done in collaboration with S. Mangin, M. Gottwald, C-H. Lambert, D. Steil, V. Uhlíř, L. Pang, M. Hehn, S. Alebrand, M. Cinchetti, G. Malinowski, Y. Fainman, and M. Aeschlimann. Supported by the ANR-10-BLANC-1005 ``Friends,'' a grant from the Advanced Storage Technology Consortium, Partner University Fund ``Novel Magnetic Materials for Spin Torque Physics'' as well as the European Project (OP2M FP7-IOF-2011-298060).

Carbon nanomaterials for non-volatile memories

NASA Astrophysics Data System (ADS)

Ahn, Ethan C.; Wong, H.-S. Philip; Pop, Eric

2018-03-01

Carbon can create various low-dimensional nanostructures with remarkable electronic, optical, mechanical and thermal properties. These features make carbon nanomaterials especially interesting for next-generation memory and storage devices, such as resistive random access memory, phase-change memory, spin-transfer-torque magnetic random access memory and ferroelectric random access memory. Non-volatile memories greatly benefit from the use of carbon nanomaterials in terms of bit density and energy efficiency. In this Review, we discuss sp2-hybridized carbon-based low-dimensional nanostructures, such as fullerene, carbon nanotubes and graphene, in the context of non-volatile memory devices and architectures. Applications of carbon nanomaterials as memory electrodes, interfacial engineering layers, resistive-switching media, and scalable, high-performance memory selectors are investigated. Finally, we compare the different memory technologies in terms of writing energy and time, and highlight major challenges in the manufacturing, integration and understanding of the physical mechanisms and material properties.

Studies on laws of stress-magnetization based on magnetic memory testing technique

NASA Astrophysics Data System (ADS)

Ren, Shangkun; Ren, Xianzhi

2018-03-01

Metal magnetic memory (MMM) testing technique is a novel testing method which can early test stress concentration status of ferromagnetic components. Under the different maximum tensile stress, the relationship between the leakage magnetic field of at certain point of cold rolled steel specimen and the tensile stress was measured during the process of loading and unloading by repeated. It shows that when the maximum tensile stress is less than 610 MPa, the relationship between the magnetic induction intensity and the stress is linear; When the maximum tensile stress increase from 610 MPa to 653 MPa of yield point, the relationship between the magnetic induction intensity and the tensile becomes bending line. The location of the extreme point of the bending line will move rapidly from the position of smaller stress to the larger stress position, and the variation of magnetic induction intensity increases rapidly. When the maximum tensile stress is greater than the 653 MPa of yield point, the variation of the magnetic induction intensity remains large, and the position of the extreme point moves very little. In theoretical aspects, tensile stress is to be divided into ordered stress and disordered stress. In the stage of elastic stress, a microscopic model of the order stress magnetization is established, and the conclusions are in good agreement with the experimental data. In the plastic deformation stage, a microscopic model of disordered stress magnetization is established, and the conclusions are in good agreement with the experimental data, too. The research results can provide reference for the accurate quantitative detection and evaluation of metal magnetic memory testing technology.

Magnetic memory of a single-molecule quantum magnet wired to a gold surface.

PubMed

Mannini, Matteo; Pineider, Francesco; Sainctavit, Philippe; Danieli, Chiara; Otero, Edwige; Sciancalepore, Corrado; Talarico, Anna Maria; Arrio, Marie-Anne; Cornia, Andrea; Gatteschi, Dante; Sessoli, Roberta

2009-03-01

In the field of molecular spintronics, the use of magnetic molecules for information technology is a main target and the observation of magnetic hysteresis on individual molecules organized on surfaces is a necessary step to develop molecular memory arrays. Although simple paramagnetic molecules can show surface-induced magnetic ordering and hysteresis when deposited on ferromagnetic surfaces, information storage at the molecular level requires molecules exhibiting an intrinsic remnant magnetization, like the so-called single-molecule magnets (SMMs). These have been intensively investigated for their rich quantum behaviour but no magnetic hysteresis has been so far reported for monolayers of SMMs on various non-magnetic substrates, most probably owing to the chemical instability of clusters on surfaces. Using X-ray absorption spectroscopy and X-ray magnetic circular dichroism synchrotron-based techniques, pushed to the limits in sensitivity and operated at sub-kelvin temperatures, we have now found that robust, tailor-made Fe(4) complexes retain magnetic hysteresis at gold surfaces. Our results demonstrate that isolated SMMs can be used for storing information. The road is now open to address individual molecules wired to a conducting surface in their blocked magnetization state, thereby enabling investigation of the elementary interactions between electron transport and magnetism degrees of freedom at the molecular scale.

Effect of platinum substitution on the structural and magnetic properties of Ni2MnGa ferromagnetic shape memory alloy

NASA Astrophysics Data System (ADS)

Singh, Sanjay; D'Souza, S. W.; Nayak, J.; Caron, L.; Suard, E.; Chadov, S.; Felser, C.

2016-04-01

Ni2MnGa exhibits ideal ferromagnetic shape memory properties, however, brittleness and a low-temperature martensite transition hinder its technological applications motivating the search for novel materials showing better mechanical properties as well as higher transition temperatures. In this work, the crystal structure, phase transitions, and the magnetic properties of quaternary Ni2 -xPtxMnGa (0 ≤x ≤1 ) shape memory alloys were studied experimentally by x-ray diffraction, magnetization measurements, and neutron diffraction and compared to ab initio calculations. Compositions within 0 ≤x ≤0.25 exhibit the cubic austenite phase at room temperature. The x ≈0.3 composition exhibits a seven-layer modulated monoclinic martensite structure. Within 0.4 ≤x ≤1 , the system stabilizes in the nonmodulated tetragonal structure. The martensite transition has very narrow thermal hysteresis 0 ≤x ≤0.3 , which is a typical characteristic of a shape memory alloy. By increasing x , the temperature of the martensite transition increases, while that of the magnetic transition decreases. The x =1 composition (NiPtMnGa) in the martensite phase undergoes a para-to-ferrimagnetic transition. The saturation magnetization exhibits a nontrivial behavior with increasing up to x ≈0.25 , above which, it suddenly decreases. Powder neutron diffraction reveals the presence of antisite disorder, with about 17% of the original Ga sites being occupied by Mn. Computations suggest that the antisite disorder triggers an antiferromagnetic coupling between two Mn atoms in different crystallographic positions, resulting into a sudden drop of the saturation magnetization for higher x .

Realization of the manipulation of ultracold atoms with a reconfigurable nanomagnetic system of domain walls.

PubMed

West, Adam D; Weatherill, Kevin J; Hayward, Thomas J; Fry, Paul W; Schrefl, Thomas; Gibbs, Mike R J; Adams, Charles S; Allwood, Dan A; Hughes, Ifan G

2012-08-08

Planar magnetic nanowires have been vital to the development of spintronic technology. They provide an unparalleled combination of magnetic reconfigurability, controllability, and scalability, which has helped to realize such applications as racetrack memory and novel logic gates. Microfabricated atom optics benefit from all of these properties, and we present the first demonstration of the amalgamation of spintronic technology with ultracold atoms. A magnetic interaction is exhibited through the reflection of a cloud of (87)Rb atoms at a temperature of 10 μK, from a 2 mm × 2 mm array of nanomagnetic domain walls. In turn, the incident atoms approach the array at heights of the order of 100 nm and are thus used to probe magnetic fields at this distance.

Identification of novel compositions of ferromagnetic shape-memory alloys using composition spreads.

PubMed

Takeuchi, I; Famodu, O O; Read, J C; Aronova, M A; Chang, K-S; Craciunescu, C; Lofland, S E; Wuttig, M; Wellstood, F C; Knauss, L; Orozco, A

2003-03-01

Exploration of new ferroic (ferroelectric, ferromagnetic or ferroelastic) materials continues to be a central theme in condensed matter physics and to drive advances in key areas of technology. Here, using thin-film composition spreads, we have mapped the functional phase diagram of the Ni-Mn-Ga system whose Heusler composition Ni(2)MnGa is a well known ferromagnetic shape-memory alloy. A characterization technique that allows detection of martensitic transitions by visual inspection was combined with quantitative magnetization mapping using scanning SQUID (superconducting quantum interference device) microscopy. We find that a large, previously unexplored region outside the Heusler composition contains reversible martensites that are also ferromagnetic. A clear relationship between magnetization and the martensitic transition temperature is observed, revealing a strong thermodynamical coupling between magnetism and martensitic instability across a large fraction of the phase diagram.

Fundamentals handbook of electrical and computer engineering. Volume 1 Circuits fields and electronics

NASA Astrophysics Data System (ADS)

Chang, S. S. L.

State of the art technology in circuits, fields, and electronics is discussed. The principles and applications of these technologies to industry, digital processing, microwave semiconductors, and computer-aided design are explained. Important concepts and methodologies in mathematics and physics are reviewed, and basic engineering sciences and associated design methods are dealt with, including: circuit theory and the design of magnetic circuits and active filter synthesis; digital signal processing, including FIR and IIR digital filter design; transmission lines, electromagnetic wave propagation and surface acoustic wave devices. Also considered are: electronics technologies, including power electronics, microwave semiconductors, GaAs devices, and magnetic bubble memories; digital circuits and logic design.

Design of membrane actuators based on ferromagnetic shape memory alloy composite for the synthetic jet actuator

NASA Astrophysics Data System (ADS)

Liang, Yuanchang; Taya, Minoru; Kuga, Yasuo

2004-07-01

A new membrane actuator based on our previous diaphragm actuator was designed and constructed to improve the dynamic performance. The finite element analysis was used to estimate the frequency response of the composite membrane which will be driven close to its resonance to obtain a large stroke. The membrane is made of ferromagnetic shape memory alloy (FSMA) composite including a ferromagnetic soft iron pad and a superelastic grade of NiTi shape memory alloy (SMA). The actuation mechanism for the FSMA composite membrane of the actuator is the hybrid mechanism that we proposed previously. This membrane actuator is designed for a new synthetic jet actuator package that will be used for active flow control technology on airplane wings. Based on the FEM results, the new membrane actuator system was assembled and its static and dynamic performance was experimentally evaluated including the dynamic magnetic response of the hybrid magnet.

Nanoscale memory elements based on the superconductor-ferromagnet proximity effect and spin-transfer torque magnetization switching

NASA Astrophysics Data System (ADS)

Baek, Burm

Superconducting-ferromagnetic hybrid devices have potential for a practical memory technology compatible with superconducting logic circuits and may help realize energy-efficient, high-performance superconducting computers. We have developed Josephson junction devices with pseudo-spin-valve barriers. We observed changes in Josephson critical current depending on the magnetization state of the barrier (parallel or anti-parallel) through the superconductor-ferromagnet proximity effect. This effect persists to nanoscale devices in contrast to the remanent field effect. In nanopillar devices, the magnetization states of the pseudo-spin-valve barriers could also be switched with applied bias currents at 4 K, which is consistent with the spin-transfer torque effect in analogous room-temperature spin valve devices. These results demonstrate devices that combine major superconducting and spintronic effects for scalable read and write of memory states, respectively. Further challenges and proposals towards practical devices will also be discussed.In collaboration with: William Rippard, NIST - Boulder, Matthew Pufall, NIST - Boulder, Stephen Russek, NIST-Boulder, Michael Schneider, NIST - Boulder, Samuel Benz, NIST - Boulder, Horst Rogalla, NIST-Boulder, Paul Dresselhaus, NIST - Boulder

The effect of patterning options on embedded memory cells in logic technologies at iN10 and iN7

NASA Astrophysics Data System (ADS)

Appeltans, Raf; Weckx, Pieter; Raghavan, Praveen; Kim, Ryoung-Han; Kar, Gouri Sankar; Furnémont, Arnaud; Van der Perre, Liesbet; Dehaene, Wim

2017-03-01

Static Random Access Memory (SRAM) cells are used together with logic standard cells as the benchmark to develop the process flow for new logic technologies. In order to achieve successful integration of Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) as area efficient higher level embedded cache, it also needs to be included as a benchmark. The simple cell structure of STT-MRAM brings extra patterning challenges to achieve high density. The two memory types are compared in terms of minimum area and critical design rules in both the iN10 and iN7 node, with an extra focus on patterning options in iN7. Both the use of Self-Aligned Quadruple Patterning (SAQP) mandrel and spacer engineering, as well as multi-level via's are explored. These patterning options result in large area gains for the STT-MRAM cell and moreover determine which cell variant is the smallest.

Bias voltage induced resistance switching effect in single-molecule magnets' tunneling junction.

PubMed

Zhang, Zhengzhong; Jiang, Liang

2014-09-12

An electric-pulse-induced reversible resistance change effect in a molecular magnetic tunneling junction, consisting of a single-molecule magnet (SMM) sandwiched in one nonmagnetic and one ferromagnetic electrode, is theoretically investigated. By applying a time-varying bias voltage, the SMM's spin orientation can be manipulated with large bias voltage pulses. Moreover, the different magnetic configuration at high-resistance/low-resistance states can be 'read out' by utilizing relative low bias voltage. This device scheme can be implemented with current technologies (Khajetoorians et al 2013 Science 339 55) and has potential application in molecular spintronics and high-density nonvolatile memory devices.

Evolution of magnetic disk subsystems

NASA Astrophysics Data System (ADS)

Kaneko, Satoru

1994-06-01

The higher recording density of magnetic disk realized today has brought larger storage capacity per unit and smaller form factors. If the required access performance per MB is constant, the performance of large subsystems has to be several times better. This article describes mainly the technology for improving the performance of the magnetic disk subsystems and the prospects of their future evolution. Also considered are 'crosscall pathing' which makes the data transfer channel more effective, 'disk cache' which improves performance coupling with solid state memory technology, and 'RAID' which improves the availability and integrity of disk subsystems by organizing multiple disk drives in a subsystem. As a result, it is concluded that since the performance of the subsystem is dominated by that of the disk cache, maximation of the performance of the disk cache subsystems is very important.

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Field Effect Transistor

NASA Astrophysics Data System (ADS)

Xu, Cheng; Liu, Bo; Chen, Yi-Feng; Liang, Shuang; Song, Zhi-Tang; Feng, Song-Lin; Wan, Xu-Dong; Yang, Zuo-Ya; Xie, Joseph; Chen, Bomy

2008-05-01

A Ge2Sb2Te5 based phase change memory device cell integrated with metal-oxide semiconductor field effect transistor (MOSFET) is fabricated using standard 0. 18 μm complementary metal-oxide semiconductor process technology. It shows steady switching characteristics in the dc current-voltage measurement. The phase changing phenomenon from crystalline state to amorphous state with a voltage pulse altitude of 2.0 V and pulse width of 50 ns is also obtained. These results show the feasibility of integrating phase change memory cell with MOSFET.

Improved Writing-Conductor Designs For Magnetic Memory

NASA Technical Reports Server (NTRS)

Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

1994-01-01

Writing currents reduced to practical levels. Improved conceptual designs for writing conductors in micromagnet/Hall-effect random-access integrated-circuit memory reduces electrical current needed to magnetize micromagnet in each memory cell. Basic concept of micromagnet/Hall-effect random-access memory presented in "Magnetic Analog Random-Access Memory" (NPO-17999).

Piezoelectric control of magnetoelectric coupling driven non-volatile memory switching and self cooling effects in FE/FSMA multiferroic heterostructures

NASA Astrophysics Data System (ADS)

Singh, Kirandeep; Kaur, Davinder

2017-02-01

The manipulation of magnetic states and materials' spin degree-of-freedom via a control of an electric (E-) field has been recently pursued to develop magnetoelectric (ME) coupling-driven electronic data storage devices with high read/write endurance, fast dynamic response, and low energy dissipation. One major hurdle for this approach is to develop reliable materials which should be compatible with prevailing silicon (Si)-based complementary metal-oxide-semiconductor (CMOS) technology, simultaneously allowing small voltage for the tuning of magnetization switching. In this regard, multiferroic heterostructures where ferromagnetic (FM) and ferroelectric (FE) layers are alternatively grown on conventional Si substrates are promising as the piezoelectric control of magnetization switching is anticipated to be possible by an E-field. In this work, we study the ferromagnetic shape memory alloys based PbZr0.52Ti0.48O3/Ni50Mn35In15 (PZT/Ni-Mn-In) multiferroic heterostructures, and investigate their potential for CMOS compatible non-volatile magnetic data storage applications. We demonstrate the voltage-impulse controlled nonvolatile, reversible, and bistable magnetization switching at room temperature in Si-integrated PZT/Ni-Mn-In thin film multiferroic heterostructures. We also thoroughly unveil the various intriguing features in these materials, such as E-field tuned ME coupling and magnetocaloric effect, shape memory induced ferroelectric modulation, improved fatigue endurance as well as Refrigeration Capacity (RC). This comprehensive study suggests that these novel materials have a great potential for the development of unconventional nanoscale memory and refrigeration devices with self-cooling effect and enhanced refrigeration efficiency, thus providing a new venue for their applications.

Observation of Magnetic Radial Vortex Nucleation in a Multilayer Stack with Tunable Anisotropy.

PubMed

Karakas, Vedat; Gokce, Aisha; Habiboglu, Ali Taha; Arpaci, Sevdenur; Ozbozduman, Kaan; Cinar, Ibrahim; Yanik, Cenk; Tomasello, Riccardo; Tacchi, Silvia; Siracusano, Giulio; Carpentieri, Mario; Finocchio, Giovanni; Hauet, Thomas; Ozatay, Ozhan

2018-05-08

Recently discovered exotic magnetic configurations, namely magnetic solitons appearing in the presence of bulk or interfacial Dzyaloshinskii-Moriya Interaction (i-DMI), have excited scientists to explore their potential applications in emerging spintronic technologies such as race-track magnetic memory, spin logic, radio frequency nano-oscillators and sensors. Such studies are motivated by their foreseeable advantages over conventional micro-magnetic structures due to their small size, topological stability and easy spin-torque driven manipulation with much lower threshold current densities giving way to improved storage capacity, and faster operation with efficient use of energy. In this work, we show that in the presence of i-DMI in Pt/CoFeB/Ti multilayers by tuning the magnetic anisotropy (both in-plane and perpendicular-to-plane) via interface engineering and postproduction treatments, we can stabilize a variety of magnetic configurations such as Néel skyrmions, horseshoes and most importantly, the recently predicted isolated radial vortices at room temperature and under zero bias field. Especially, the radial vortex state with its absolute convergence to or divergence from a single point can potentially offer exciting new applications such as particle trapping/detrapping in addition to magnetoresistive memories with efficient switching, where the radial vortex state can act as a source of spin-polarized current with radial polarization.

A model for ferromagnetic shape memory thin film actuators

NASA Astrophysics Data System (ADS)

Lee, Kwok-Lun; Seelecke, Stefan

2005-05-01

The last decade has witnessed the discovery of materials combining shape memory behavior with ferromagnetic properties (FSMAs), see James & Wuttig1, James et al.2, Ullakko et al.3. These materials feature the so-called giant magnetostrain effect, which, in contrast to conventional magnetostriction is due motion of martensite twins. This effect has motivated the development of a new class of active materials transducers, which combine intrinsic sensing capabilities with superior actuation speed and improved efficiency when compared to conventional shape memory alloys. Currently, thin film technology is being developed intensively in order to pave the way for applications in micro- and nanotechnology. As an example, Kohl et al., recently proposed a novel actuation mechanism based on NiMnGa thin film technology, which makes use of both the ferromagnetic transition and the martensitic transformation allowing the realization of an almost perfect antagonism in a single component part. The implementation of the mechanism led to the award-winning development of an optical microscanner. Possible applications in nanotechnology arise, e.g., by combination of smart NiMnGa actuators with scanning probe technologies. The key aspect of Kohl's device is the fact that it employs electric heating for actuation, which requires a thermo-magneto-mechanical model for analysis. The research presented in this paper aims at the development of a model that simulates this particular material behavior. It is based on ideas originally developed for conventional shape memory alloy behavior, (Mueller & Achenbach, Achenbach, Seelecke, Seelecke & Mueller) and couples it with a simple expression for the nonlinear temperature- and position-dependent effective magnetic force. This early and strongly simplified version does not account for a full coupling between SMA behavior and ferromagnetism yet, and does not incorporate the hysteretic character of the magnetization phenomena either. It can however be used to explain the basic actuation mechanism and highlight the role of coupled magnetic and martensitic transformation with respect to the actuator performance. In particular will we be able to develop guidelines for desirable alloy compositions, such that the resulting transition temperatures guarantee optimized actuator performance.

Optoelectronic-cache memory system architecture.

PubMed

Chiarulli, D M; Levitan, S P

1996-05-10

We present an investigation of the architecture of an optoelectronic cache that can integrate terabit optical memories with the electronic caches associated with high-performance uniprocessors and multiprocessors. The use of optoelectronic-cache memories enables these terabit technologies to provide transparently low-latency secondary memory with frame sizes comparable with disk pages but with latencies that approach those of electronic secondary-cache memories. This enables the implementation of terabit memories with effective access times comparable with the cycle times of current microprocessors. The cache design is based on the use of a smart-pixel array and combines parallel free-space optical input-output to-and-from optical memory with conventional electronic communication to the processor caches. This cache and the optical memory system to which it will interface provide a large random-access memory space that has a lower overall latency than that of magnetic disks and disk arrays. In addition, as a consequence of the high-bandwidth parallel input-output capabilities of optical memories, fault service times for the optoelectronic cache are substantially less than those currently achievable with any rotational media.

Ferromagnetic Josephson Junctions for Cryogenic Memory

NASA Astrophysics Data System (ADS)

Niedzielski, Bethany M.; Gingrich, Eric C.; Khasawneh, Mazin A.; Loloee, Reza; Pratt, William P., Jr.; Birge, Norman O.

2015-03-01

Josephson junctions containing ferromagnetic materials are of interest for both scientific and technological purposes. In principle, either the amplitude of the critical current or superconducting phase shift across the junction can be controlled by the relative magnetization directions of the ferromagnetic layers in the junction. Our approach concentrates on phase control utilizing two junctions in a SQUID geometry. We will report on efforts to control the phase of junctions carrying either spin-singlet or spin-triplet supercurrent for cryogenic memory applications. Supported by Northorp Grumman Corporation and by IARPA under SPAWAR Contract N66001-12-C-2017.

Spin-valve Josephson junctions for cryogenic memory

NASA Astrophysics Data System (ADS)

Niedzielski, Bethany M.; Bertus, T. J.; Glick, Joseph A.; Loloee, R.; Pratt, W. P.; Birge, Norman O.

2018-01-01

Josephson junctions containing two ferromagnetic layers are being considered for use in cryogenic memory. Our group recently demonstrated that the ground-state phase difference across such a junction with carefully chosen layer thicknesses could be controllably toggled between zero and π by switching the relative magnetization directions of the two layers between the antiparallel and parallel configurations. However, several technological issues must be addressed before those junctions can be used in a large-scale memory. Many of these issues can be more easily studied in single junctions, rather than in the superconducting quantum interference device (SQUID) used for phase-sensitive measurements. In this work, we report a comprehensive study of spin-valve junctions containing a Ni layer with a fixed thickness of 2.0 nm and a NiFe layer of thickness varying between 1.1 and 1.8 nm in steps of 0.1 nm. We extract the field shift of the Fraunhofer patterns and the critical currents of the junctions in the parallel and antiparallel magnetic states, as well as the switching fields of both magnetic layers. We also report a partial study of similar junctions containing a slightly thinner Ni layer of 1.6 nm and the same range of NiFe thicknesses. These results represent the first step toward mapping out a "phase diagram" for phase-controllable spin-valve Josephson junctions as a function of the two magnetic layer thicknesses.

Electric-field-driven switching of individual magnetic skyrmions

NASA Astrophysics Data System (ADS)

Hsu, Pin-Jui; Kubetzka, André; Finco, Aurore; Romming, Niklas; von Bergmann, Kirsten; Wiesendanger, Roland

2017-02-01

Controlling magnetism with electric fields is a key challenge to develop future energy-efficient devices. The present magnetic information technology is mainly based on writing processes requiring either local magnetic fields or spin torques, but it has also been demonstrated that magnetic properties can be altered on the application of electric fields. This has been ascribed to changes in magnetocrystalline anisotropy caused by spin-dependent screening and modifications of the band structure, changes in atom positions or differences in hybridization with an adjacent oxide layer. However, the switching between states related by time reversal, for example magnetization up and down as used in the present technology, is not straightforward because the electric field does not break time-reversal symmetry. Several workarounds have been applied to toggle between bistable magnetic states with electric fields, including changes of material composition as a result of electric fields. Here we demonstrate that local electric fields can be used to switch reversibly between a magnetic skyrmion and the ferromagnetic state. These two states are topologically inequivalent, and we find that the direction of the electric field directly determines the final state. This observation establishes the possibility to combine electric-field writing with the recently envisaged skyrmion racetrack-type memories.

Engineered materials for all-optical helicity-dependent magnetic switching

NASA Astrophysics Data System (ADS)

Mangin, S.; Gottwald, M.; Lambert, C.-H.; Steil, D.; Uhlíř, V.; Pang, L.; Hehn, M.; Alebrand, S.; Cinchetti, M.; Malinowski, G.; Fainman, Y.; Aeschlimann, M.; Fullerton, E. E.

2014-03-01

The possibility of manipulating magnetic systems without applied magnetic fields have attracted growing attention over the past fifteen years. The low-power manipulation of the magnetization, preferably at ultrashort timescales, has become a fundamental challenge with implications for future magnetic information memory and storage technologies. Here we explore the optical manipulation of the magnetization in engineered magnetic materials. We demonstrate that all-optical helicity-dependent switching (AO-HDS) can be observed not only in selected rare earth-transition metal (RE-TM) alloy films but also in a much broader variety of materials, including RE-TM alloys, multilayers and heterostructures. We further show that RE-free Co-Ir-based synthetic ferrimagnetic heterostructures designed to mimic the magnetic properties of RE-TM alloys also exhibit AO-HDS. These results challenge present theories of AO-HDS and provide a pathway to engineering materials for future applications based on all-optical control of magnetic order.

Skyrmion domain wall collision and domain wall-gated skyrmion logic

NASA Astrophysics Data System (ADS)

Xing, Xiangjun; Pong, Philip W. T.; Zhou, Yan

2016-08-01

Skyrmions and domain walls are significant spin textures of great technological relevance to magnetic memory and logic applications, where they can be used as carriers of information. The unique topology of skyrmions makes them display emergent dynamical properties as compared with domain walls. Some studies have demonstrated that the two topologically inequivalent magnetic objects could be interconverted by using cleverly designed geometric structures. Here, we numerically address the skyrmion domain wall collision in a magnetic racetrack by introducing relative motion between the two objects based on a specially designed junction. An electric current serves as the driving force that moves a skyrmion toward a trapped domain wall pair. We see different types of collision dynamics depending on the driving parameters. Most importantly, the modulation of skyrmion transport using domain walls is realized in this system, allowing a set of domain wall-gated logical NOT, NAND, and NOR gates to be constructed. This work provides a skyrmion-based spin-logic architecture that is fully compatible with racetrack memories.

Magnetic vortex racetrack memory

NASA Astrophysics Data System (ADS)

Geng, Liwei D.; Jin, Yongmei M.

2017-02-01

We report a new type of racetrack memory based on current-controlled movement of magnetic vortices in magnetic nanowires with rectangular cross-section and weak perpendicular anisotropy. Data are stored through the core polarity of vortices and each vortex carries a data bit. Besides high density, non-volatility, fast data access, and low power as offered by domain wall racetrack memory, magnetic vortex racetrack memory has additional advantages of no need for constrictions to define data bits, changeable information density, adjustable current magnitude for data propagation, and versatile means of ultrafast vortex core switching. By using micromagnetic simulations, current-controlled motion of magnetic vortices in cobalt nanowire is demonstrated for racetrack memory applications.

A general nonlinear magnetomechanical model for ferromagnetic materials under a constant weak magnetic field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Pengpeng; Zheng, Xiaojing, E-mail: xjzheng@xidian.edu.cn; Jin, Ke

2016-04-14

Weak magnetic nondestructive testing (e.g., metal magnetic memory method) concerns the magnetization variation of ferromagnetic materials due to its applied load and a weak magnetic surrounding them. One key issue on these nondestructive technologies is the magnetomechanical effect for quantitative evaluation of magnetization state from stress–strain condition. A representative phenomenological model has been proposed to explain the magnetomechanical effect by Jiles in 1995. However, the Jiles' model has some deficiencies in quantification, for instance, there is a visible difference between theoretical prediction and experimental measurements on stress–magnetization curve, especially in the compression case. Based on the thermodynamic relations and themore » approach law of irreversible magnetization, a nonlinear coupled model is proposed to improve the quantitative evaluation of the magnetomechanical effect. Excellent agreement has been achieved between the predictions from the present model and previous experimental results. In comparison with Jiles' model, the prediction accuracy is improved greatly by the present model, particularly for the compression case. A detailed study has also been performed to reveal the effects of initial magnetization status, cyclic loading, and demagnetization factor on the magnetomechanical effect. Our theoretical model reveals that the stable weak magnetic signals of nondestructive testing after multiple cyclic loads are attributed to the first few cycles eliminating most of the irreversible magnetization. Remarkably, the existence of demagnetization field can weaken magnetomechanical effect, therefore, significantly reduces the testing capability. This theoretical model can be adopted to quantitatively analyze magnetic memory signals, and then can be applied in weak magnetic nondestructive testing.« less

Titan probe technology assessment and technology development plan study

NASA Technical Reports Server (NTRS)

Castro, A. J.

1980-01-01

The need for technology advances to accomplish the Titan probe mission was determined by defining mission conditions and requirements and evaluating the technology impact on the baseline probe configuration. Mission characteristics found to be technology drivers include (1) ten years dormant life in space vacuum; (2) unknown surface conditions, various sample materials, and a surface temperature; and (3) mission constraints of the Saturn Orbiter Dual Probe mission regarding weight allocation. The following areas were identified for further development: surface sample acquisition system; battery powered system; nonmetallic materials; magnetic bubble memory devices, and the landing system. Preentry science, reliability, and weight reduction and redundancy must also be considered.

Experimental test of Landauer’s principle in single-bit operations on nanomagnetic memory bits

PubMed Central

Hong, Jeongmin; Lambson, Brian; Dhuey, Scott; Bokor, Jeffrey

2016-01-01

Minimizing energy dissipation has emerged as the key challenge in continuing to scale the performance of digital computers. The question of whether there exists a fundamental lower limit to the energy required for digital operations is therefore of great interest. A well-known theoretical result put forward by Landauer states that any irreversible single-bit operation on a physical memory element in contact with a heat bath at a temperature T requires at least kBT ln(2) of heat be dissipated from the memory into the environment, where kB is the Boltzmann constant. We report an experimental investigation of the intrinsic energy loss of an adiabatic single-bit reset operation using nanoscale magnetic memory bits, by far the most ubiquitous digital storage technology in use today. Through sensitive, high-precision magnetometry measurements, we observed that the amount of dissipated energy in this process is consistent (within 2 SDs of experimental uncertainty) with the Landauer limit. This result reinforces the connection between “information thermodynamics” and physical systems and also provides a foundation for the development of practical information processing technologies that approach the fundamental limit of energy dissipation. The significance of the result includes insightful direction for future development of information technology. PMID:26998519

Design of a magnetic-tunnel-junction-oriented nonvolatile lookup table circuit with write-operation-minimized data shifting

NASA Astrophysics Data System (ADS)

Suzuki, Daisuke; Hanyu, Takahiro

2018-04-01

A magnetic-tunnel-junction (MTJ)-oriented nonvolatile lookup table (LUT) circuit, in which a low-power data-shift function is performed by minimizing the number of write operations in MTJ devices is proposed. The permutation of the configuration memory cell for read/write access is performed as opposed to conventional direct data shifting to minimize the number of write operations, which results in significant write energy savings in the data-shift function. Moreover, the hardware cost of the proposed LUT circuit is small since the selector is shared between read access and write access. In fact, the power consumption in the data-shift function and the transistor count are reduced by 82 and 52%, respectively, compared with those in a conventional static random-access memory-based implementation using a 90 nm CMOS technology.

Application of metal magnetic memory technology on defects detection of jack-up platform

NASA Astrophysics Data System (ADS)

Xu, Changhang; Cheng, Liping; Xie, Jing; Yin, Xiaokang; Chen, Guoming

2016-02-01

Metal magnetic memory test (MMMT), which is an effective way in evaluating early damages of ferrimagnets, can determine the existence of material stresses concentration and premature defects. As one of offshore oil exploration and development equipment, jack-up platform always generate stress concentration during its life-cycle due to complicated loading condition and the hash marine environment, which will decline the bearing capacity and cause serious consequences. The paper conducts in situ experiments of defects detection on some key structural components of jack-up platform using MMMT. The signals acquired by MMM-System are processed for feature extraction to evaluate the severity of structure stress concentration. The results show that the method presented in this paper based on MMMT can provide an effective and convenient way of defect detection and structural health monitoring for Jack-up Platform.

Long-term reliable physically unclonable function based on oxide tunnel barrier breakdown on two-transistors two-magnetic-tunnel-junctions cell-based embedded spin transfer torque magnetoresistive random access memory

NASA Astrophysics Data System (ADS)

Takaya, Satoshi; Tanamoto, Tetsufumi; Noguchi, Hiroki; Ikegami, Kazutaka; Abe, Keiko; Fujita, Shinobu

2017-04-01

Among the diverse applications of spintronics, security for internet-of-things (IoT) devices is one of the most important. A physically unclonable function (PUF) with a spin device (spin transfer torque magnetoresistive random access memory, STT-MRAM) is presented. Oxide tunnel barrier breakdown is used to realize long-term stability for PUFs. A secure PUF has been confirmed by evaluating the Hamming distance of a 32-bit STT-MRAM-PUF fabricated using 65 nm CMOS technology.

Electric field induced reversible 180° magnetization switching through tuning of interfacial exchange bias along magnetic easy-axis in multiferroic laminates

PubMed Central

Xue, Xu; Zhou, Ziyao; Peng, Bin; Zhu, Mingmin; Zhang, Yijun; Ren, Wei; Ren, Tao; Yang, Xi; Nan, Tianxiang; Sun, Nian X.; Liu, Ming

2015-01-01

E-field control of interfacial exchange coupling and deterministic switching of magnetization have been demonstrated in two sets of ferromagnetic(FM)/antiferromagnetic(AFM)/ferroelectric(FE) multiferroic heterostructures, including NiFe/NiCoO/glass/PZN-PT (011) and NiFe/FeMn/glass/PZN-PT (011). We designed this experiment to achieve exchange bias tuning along the magnetic easy axis, which is critical for realizing reversible 180° magnetization deterministic switching at zero or small magnetic bias. Strong exchange coupling were established across AFM-FM interfaces, which plays an important role in voltage control of magnetization switching. Through the competition between the E-field induced uniaxial anisotropy in ferromagnetic layer and unidirectional anisotropy in antiferromagnetic layer, the exchange bias was significantly shifted by up to |∆Hex|/Hex = 8% in NiFe/FeMn/glass/PZN-PT (011) and 13% in NiFe/NiCoO/glass/PZN-PT (011). In addition, the square shape of the hysteresis loop, as well as a strong shape tunability of |∆Hex|/Hc = 67.5 ~ 125% in NiFe/FeMn/glass/PZN-PT and 30 ~ 38% in NiFe/NiCoO/glass/PZN-PT were achieved, which lead to a near 180° magnetization switching. Electrical tuning of interfacial exchange coupling in FM/AFM/FE systems paves a new way for realizing magnetoelectric random access memories and other memory technologies. PMID:26576658

Electric field induced reversible 180° magnetization switching through tuning of interfacial exchange bias along magnetic easy-axis in multiferroic laminates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xue, Xu; Zhou, Ziyao; Peng, Bin

2015-11-18

E-field control of interfacial exchange coupling and deterministic switching of magnetization have been demonstrated in two sets of ferromagnetic(FM)/antiferromagnetic(AFM)/ferroelectric(FE) multiferroic heterostructures, including NiFe/NiCoO/glass/PZN-PT (011) and NiFe/FeMn/glass/PZN-PT (011). We designed this experiment to achieve exchange bias tuning along the magnetic easy axis, which is critical for realizing reversible 180° magnetization deterministic switching at zero or small magnetic bias. Strong exchange coupling were established across AFM-FM interfaces, which plays an important role in voltage control of magnetization switching. Through the competition between the E-field induced uniaxial anisotropy in ferromagnetic layer and unidirectional anisotropy in antiferromagnetic layer, the exchange bias was significantly shiftedmore » by up to |ΔH ex|/H ex=8% in NiFe/FeMn/glass/PZN-PT (011) and 13% in NiFe/NiCoO/glass/PZN-PT (011). In addition, the square shape of the hysteresis loop, as well as a strong shape tunability of |ΔH ex|/H c=67.5~125% in NiFe/FeMn/glass/PZN-PT and 30~38% in NiFe/NiCoO/glass/PZN-PT were achieved, which lead to a near 180° magnetization switching. Lastly, electrical tuning of interfacial exchange coupling in FM/AFM/FE systems paves a new way for realizing magnetoelectric random access memories and other memory technologies.« less

Electric field induced reversible 180° magnetization switching through tuning of interfacial exchange bias along magnetic easy-axis in multiferroic laminates

NASA Astrophysics Data System (ADS)

Xue, Xu; Zhou, Ziyao; Peng, Bin; Zhu, Mingmin; Zhang, Yijun; Ren, Wei; Ren, Tao; Yang, Xi; Nan, Tianxiang; Sun, Nian X.; Liu, Ming

2015-11-01

E-field control of interfacial exchange coupling and deterministic switching of magnetization have been demonstrated in two sets of ferromagnetic(FM)/antiferromagnetic(AFM)/ferroelectric(FE) multiferroic heterostructures, including NiFe/NiCoO/glass/PZN-PT (011) and NiFe/FeMn/glass/PZN-PT (011). We designed this experiment to achieve exchange bias tuning along the magnetic easy axis, which is critical for realizing reversible 180° magnetization deterministic switching at zero or small magnetic bias. Strong exchange coupling were established across AFM-FM interfaces, which plays an important role in voltage control of magnetization switching. Through the competition between the E-field induced uniaxial anisotropy in ferromagnetic layer and unidirectional anisotropy in antiferromagnetic layer, the exchange bias was significantly shifted by up to |ΔHex|/Hex = 8% in NiFe/FeMn/glass/PZN-PT (011) and 13% in NiFe/NiCoO/glass/PZN-PT (011). In addition, the square shape of the hysteresis loop, as well as a strong shape tunability of |ΔHex|/Hc = 67.5 ~ 125% in NiFe/FeMn/glass/PZN-PT and 30 ~ 38% in NiFe/NiCoO/glass/PZN-PT were achieved, which lead to a near 180° magnetization switching. Electrical tuning of interfacial exchange coupling in FM/AFM/FE systems paves a new way for realizing magnetoelectric random access memories and other memory technologies.

Electric field induced reversible 180° magnetization switching through tuning of interfacial exchange bias along magnetic easy-axis in multiferroic laminates.

PubMed

Xue, Xu; Zhou, Ziyao; Peng, Bin; Zhu, Mingmin; Zhang, Yijun; Ren, Wei; Ren, Tao; Yang, Xi; Nan, Tianxiang; Sun, Nian X; Liu, Ming

2015-11-18

E-field control of interfacial exchange coupling and deterministic switching of magnetization have been demonstrated in two sets of ferromagnetic(FM)/antiferromagnetic(AFM)/ferroelectric(FE) multiferroic heterostructures, including NiFe/NiCoO/glass/PZN-PT (011) and NiFe/FeMn/glass/PZN-PT (011). We designed this experiment to achieve exchange bias tuning along the magnetic easy axis, which is critical for realizing reversible 180° magnetization deterministic switching at zero or small magnetic bias. Strong exchange coupling were established across AFM-FM interfaces, which plays an important role in voltage control of magnetization switching. Through the competition between the E-field induced uniaxial anisotropy in ferromagnetic layer and unidirectional anisotropy in antiferromagnetic layer, the exchange bias was significantly shifted by up to |∆Hex|/Hex = 8% in NiFe/FeMn/glass/PZN-PT (011) and 13% in NiFe/NiCoO/glass/PZN-PT (011). In addition, the square shape of the hysteresis loop, as well as a strong shape tunability of |∆Hex|/Hc = 67.5 ~ 125% in NiFe/FeMn/glass/PZN-PT and 30 ~ 38% in NiFe/NiCoO/glass/PZN-PT were achieved, which lead to a near 180° magnetization switching. Electrical tuning of interfacial exchange coupling in FM/AFM/FE systems paves a new way for realizing magnetoelectric random access memories and other memory technologies.

The effect of magnetic field on shape memory behavior in Heusler-type nickel(,2)manganese-gallium-based compounds

NASA Astrophysics Data System (ADS)

Jeong, Soon-Jong

2000-08-01

Shape memory alloys (SMAs) have excellent mechanical properties showing large stroke and high power density when used as actuators. In terms of response speed, however, conventional SMAs have a drawback due to the isothermal nature of the associated phase transformation. A new type of SMA, called ferromagnetic SMA, is considered to replace conventional SMAs and is hoped to overcome such a slow response drawback by changing driving mode of shape memory behaviors from thermal to magnetic. The new type of ferromagnetic SMAs is expected to exhibit not only a large displacement but also rapid response when magnetic field is applied and removed. There are three kinds of ferromagnetic SMAs and among them, Ni2MnGa-based compounds exhibit prominent shape memory effects and superelasticity. In this study, Ni2MnGa-based alloys were chosen and studied to characterize shape memory behavior upon the application and removal of magnetic field. The relevance of the magnetic field-induced shape memory behavior to the magnetization process was investigated by using transformation and/or the movement of martensite variant interfaces. Two mechanisms have been proposed for controlling magnetic field-induced shape memory behaviors. One mechanism is related to shape memory behavior associated with magnetic field-induced martensitic transformation. The other is related to the rearrangement of martensite variants by magnetic field application. Magnetic field-induced martensitic transformation and shape memory effects for single- and poly-crystalline Ni2MnGa alloys were investigated under various conditions. In single crystalline specimens, it was observed that considerable strain changes are a function of magnetic field at temperatures below Mf (martensite finish temperature). Such strain changes, by application and subsequent removal of magnetic field, may be attributed to the martensite variant motion at lower temperatures than Mf. Magnetic field application made a significant contribution to the martensite transformation and related strain changes (0.3%--0.82%) at temperatures above Af (austenite finish temperature) in some polycrystalline Ni2MnGa alloys, where austenite and martensite phases possess paramagnetic and ferromagnetic properties, respectively.

Spontaneous nucleation and topological stabilization of skyrmions in magnetic nanodisks with the interfacial Dzyaloshinskii-Moriya interaction

NASA Astrophysics Data System (ADS)

Kolesnikov, A. G.; Samardak, A. S.; Stebliy, M. E.; Ognev, A. V.; Chebotkevich, L. A.; Sadovnikov, A. V.; Nikitov, S. A.; Kim, Yong Jin; Cha, In Ho; Kim, Young Keun

2017-05-01

One of the major societal challenges is reducing the power consumption of information technology (IT) devices and numerous data centers. Distinct from the current approaches based on switching of magnetic single-domain nanostructures or on movement of domain walls under high currents, an original magnetic skyrmion technology offers ultra-low power, fast, high-density, and scalable spintronic devices, including non-volatile random access memory. Using data-driven micromagnetic simulations, we demonstrate the possibility of spontaneous nucleation and stabilization of different skyrmionic states, such as skyrmions, merons, and meron-like configurations, in heavy metal/ferromagnetic nanodisks with the interfacial Dzyaloshinskii-Moriya interaction (iDMI) as a result of quasi-static magnetization reversal only. Since iDMI is not easily modulated in real systems, we show that skyrmion stabilization is easily achievable by manipulating magnetic anisotropy, saturation magnetization, and the diameters of nanodisks. The state diagrams, presented in terms of the topological charge, allow to explicitly distinguish the intermediate states between skyrmions and merons and can be used for developing a skyrmionic medium, which has been recently proposed to be a building block for future spin-orbitronic devices.

Mapping Topological Magnetization and Magnetic Skyrmions

NASA Astrophysics Data System (ADS)

Chess, Jordan J.

A 2014 study by the US Department of Energy conducted at Lawrence Berkeley National Laboratory estimated that U.S. data centers consumed 70 billion kWh of electricity. This represents about 1.8% of the total U.S. electricity consumption. Putting this in perspective 70 billion kWh of electricity is the equivalent of roughly 8 big nuclear reactors, or around double the nation's solar panel output. Developing new memory technologies capable of reducing this power consumption would be greatly beneficial as our demand for connectivity increases in the future. One newly emerging candidate for an information carrier in low power memory devices is the magnetic skyrmion. This magnetic texture is characterized by its specific non-trivial topology, giving it particle-like characteristics. Recent experimental work has shown that these skyrmions can be stabilized at room temperature and moved with extremely low electrical current densities. This rapidly developing field requires new measurement techniques capable of determining the topology of these textures at greater speed than previous approaches. In this dissertation, I give a brief introduction to the magnetic structures found in Fe/Gd multilayered systems. I then present newly developed techniques that streamline the analysis of Lorentz Transmission Electron Microscopy (LTEM) data. These techniques are then applied to further the understanding of the magnetic properties of these Fe/Gd based multilayered systems. This dissertation includes previously published and unpublished co-authored material.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sypek, John T.; Yu, Hang; Dusoe, Keith J.

Shape memory materials have the ability to recover their original shape after a significant amount of deformation when they are subjected to certain stimuli, for instance, heat or magnetic fields. But, their performance is often limited by the energetics and geometry of the martensitic-austenitic phase transformation. We report a unique shape memory behavior in CaFe 2As 2, which exhibits superelasticity with over 13% recoverable strain, over 3 GPa yield strength, repeatable stress–strain response even at the micrometer scale, and cryogenic linear shape memory effects near 50 K. These properties are acheived through a reversible uni-axial phase transformation mechanism, the tetragonal/orthorhombic-to-collapsed-tetragonalmore » phase transformation. These results offer the possibility of developing cryogenic linear actuation technologies with a high precision and high actuation power per unit volume for deep space exploration, and more broadly, suggest a mechanistic path to a class of shape memory materials, ThCr 2Si 2-structured intermetallic compounds.« less

Magnet/Hall-Effect Random-Access Memory

NASA Technical Reports Server (NTRS)

Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

1991-01-01

In proposed magnet/Hall-effect random-access memory (MHRAM), bits of data stored magnetically in Perm-alloy (or equivalent)-film memory elements and read out by using Hall-effect sensors to detect magnetization. Value of each bit represented by polarity of magnetization. Retains data for indefinite time or until data rewritten. Speed of Hall-effect sensors in MHRAM results in readout times of about 100 nanoseconds. Other characteristics include high immunity to ionizing radiation and storage densities of order 10(Sup6)bits/cm(Sup 2) or more.

Superelasticity and cryogenic linear shape memory effects of CaFe 2As 2

DOE PAGES

Sypek, John T.; Yu, Hang; Dusoe, Keith J.; ...

2017-10-20

Shape memory materials have the ability to recover their original shape after a significant amount of deformation when they are subjected to certain stimuli, for instance, heat or magnetic fields. But, their performance is often limited by the energetics and geometry of the martensitic-austenitic phase transformation. We report a unique shape memory behavior in CaFe 2As 2, which exhibits superelasticity with over 13% recoverable strain, over 3 GPa yield strength, repeatable stress–strain response even at the micrometer scale, and cryogenic linear shape memory effects near 50 K. These properties are acheived through a reversible uni-axial phase transformation mechanism, the tetragonal/orthorhombic-to-collapsed-tetragonalmore » phase transformation. These results offer the possibility of developing cryogenic linear actuation technologies with a high precision and high actuation power per unit volume for deep space exploration, and more broadly, suggest a mechanistic path to a class of shape memory materials, ThCr 2Si 2-structured intermetallic compounds.« less

PREFACE: Spin Electronics

NASA Astrophysics Data System (ADS)

Dieny, B.; Sousa, R.; Prejbeanu, L.

2007-04-01

Conventional electronics has in the past ignored the spin on the electron, however things began to change in 1988 with the discovery of giant magnetoresistance in metallic thin film stacks which led to the development of a new research area, so called spin-electronics. In the last 10 years, spin-electronics has achieved a number of breakthroughs from the point of view of both basic science and application. Materials research has led to several major discoveries: very large tunnel magnetoresistance effects in tunnel junctions with crystalline barriers due to a new spin-filtering mechanism associated with the spin-dependent symmetry of the electron wave functions new magnetic tunnelling barriers leading to spin-dependent tunnelling barrier heights and acting as spin-filters magnetic semiconductors with increasingly high ordering temperature. New phenomena have been predicted and observed: the possibility of acting on the magnetization of a magnetic nanostructure with a spin-polarized current. This effect, due to a transfer of angular momentum between the spin polarized conduction electrons and the local magnetization, can be viewed as the reciprocal of giant or tunnel magnetoresistance. It can be used to switch the magnetization of a magnetic nanostructure or to generate steady magnetic excitations in the system. the possibility of generating and manipulating spin current without charge current by creating non-equilibrium local accumulation of spin up or spin down electrons. The range of applications of spin electronics materials and phenomena is expanding: the first devices based on giant magnetoresistance were the magnetoresistive read-heads for computer disk drives. These heads, introduced in 1998 with current-in plane spin-valves, have evolved towards low resistance tunnel magnetoresistice heads in 2005. Besides magnetic recording technology, these very sensitive magnetoresistive sensors are finding applications in other areas, in particular in biology. magnetic tunnel junctions were introduced as memory elements in new types of non-volatile magnetic memories (MRAM). A first 4Mbit product was launched by Freescale in July 2006. Future generations of memories are being developed by academic groups or companies. the combination of magnetic elements with CMOS components opens a whole new paradigm in hybrid electronic components which can change the common conception of the architecture of complex electronic components with a much tighter integration of logic and memory. the steady magnetic excitations stimulated by spin-transfer might be used in a variety of microwave components provided the output power can be increased. Intense research and development efforts are being aimed at increasing this power by the synchronization of oscillators. The articles compiled in this special issue of Journal of Physics: Condensed Matter, devoted to spin electronics, review these recent developments. All the contributors are greatly acknowledged.

Magnetic behaviour studies on nanocrystalline cobalt ferrite by employing the Arrott plot

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Rajnish, E-mail: rajnishiitr15@gmail.com; Kar, Manoranjan, E-mail: mano@iitp.ac.in

Vibrating Sample Magnetometer (VSM) has been used to analyze the magnetic behavior of ferrimagnetic material (CoFe{sub 2}O{sub 4}) synthesized by the citric acid modified sol-gel method. X-ray diffraction (XRD) pattern confirms the phase purity of the sample. Its magnetic measurement has been carried out at room temperature in the field range ±1.5T. The magnetocrystalline anisotropy and saturation magnetization of CoFe{sub 2}O{sub 4} are two important parameters which need to be studied for exploring its technological applications like memory device, magnetic sensors etc. Law of Approach (LA) to saturation and the Arrott plot analysis have been carried out to obtain themore » saturation magnetization. The difference in the saturation magnetization obtained from the two methods gives the qualitative understanding of magnetocrystalline anisotropy and lattice strain present in the sample. The present study explores a new way of analyzing magnetic hysteresis loop of nanocrystalline cobalt ferrite.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chesnel, Karine; Safsten, Alex; Rytting, Matthew

The advance of magnetic nanotechnologies relies on detailed understanding of nanoscale magnetic mechanisms in materials. Magnetic domain memory (MDM), that is, the tendency for magnetic domains to repeat the same pattern during field cycling, is important for magnetic recording technologies. Here we demonstrate MDM in [Co/Pd]/IrMn films, using coherent X-ray scattering. Under illumination, the magnetic domains in [Co/Pd] produce a speckle pattern, a unique fingerprint of their nanoscale configuration. We measure MDM by cross-correlating speckle patterns throughout magnetization processes. When cooled below its blocking temperature, the film exhibits up to 100% MDM, induced by exchange-coupling with the underlying IrMn layer.more » The degree of MDM drastically depends on cooling conditions. If the film is cooled under moderate fields, MDM is high throughout the entire magnetization loop. Lastly, if the film is cooled under nearly saturating field, MDM vanishes, except at nucleation and saturation. Our findings show how to fully control the occurrence of MDM by field cooling.« less

Enhanced magnetic hysteresis in Ni-Mn-Ga single crystal and its influence on magnetic shape memory effect

NASA Astrophysics Data System (ADS)

Heczko, O.; Drahokoupil, J.; Straka, L.

2015-05-01

Enhanced magnetic hysteresis due to boron doping in combination with magnetic shape memory effect in Ni-Mn-Ga single crystal results in new interesting functionality of magnetic shape memory (MSM) alloys such as mechanical demagnetization. In Ni50.0Mn28.5Ga21.5 single crystal, the boron doping increased magnetic coercivity from few Oe to 270 Oe while not affecting the transformation behavior and 10 M martensite structure. However, the magnetic field needed for MSM effect also increased in doped sample. The magnetic behavior is compared to undoped single crystal of similar composition. The evidence from the X-ray diffraction, magnetic domain structure, magnetization loops, and temperature evolution of the magnetic coercivity points out that the enhanced hysteresis is caused by stress-induced anisotropy.

Integrated, nonvolatile, high-speed analog random access memory

NASA Technical Reports Server (NTRS)

Katti, Romney R. (Inventor); Wu, Jiin-Chuan (Inventor); Stadler, Henry L. (Inventor)

1994-01-01

This invention provides an integrated, non-volatile, high-speed random access memory. A magnetically switchable ferromagnetic or ferrimagnetic layer is sandwiched between an electrical conductor which provides the ability to magnetize the magnetically switchable layer and a magneto resistive or Hall effect material which allows sensing the magnetic field which emanates from the magnetization of the magnetically switchable layer. By using this integrated three-layer form, the writing process, which is controlled by the conductor, is separated from the storage medium in the magnetic layer and from the readback process which is controlled by the magnetoresistive layer. A circuit for implementing the memory in CMOS or the like is disclosed.

Recent Trends in Spintronics-Based Nanomagnetic Logic

NASA Astrophysics Data System (ADS)

Das, Jayita; Alam, Syed M.; Bhanja, Sanjukta

2014-09-01

With the growing concerns of standby power in sub-100-nm CMOS technologies, alternative computing techniques and memory technologies are explored. Spin transfer torque magnetoresistive RAM (STT-MRAM) is one such nonvolatile memory relying on magnetic tunnel junctions (MTJs) to store information. It uses spin transfer torque to write information and magnetoresistance to read information. In 2012, Everspin Technologies, Inc. commercialized the first 64Mbit Spin Torque MRAM. On the computing end, nanomagnetic logic (NML) is a promising technique with zero leakage and high data retention. In 2000, Cowburn and Welland first demonstrated its potential in logic and information propagation through magnetostatic interaction in a chain of single domain circular nanomagnetic dots of Supermalloy (Ni80Fe14Mo5X1, X is other metals). In 2006, Imre et al. demonstrated wires and majority gates followed by coplanar cross wire systems demonstration in 2010 by Pulecio et al. Since 2004 researchers have also investigated the potential of MTJs in logic. More recently with dipolar coupling between MTJs demonstrated in 2012, logic-in-memory architecture with STT-MRAM have been investigated. The architecture borrows the computing concept from NML and read and write style from MRAM. The architecture can switch its operation between logic and memory modes with clock as classifier. Further through logic partitioning between MTJ and CMOS plane, a significant performance boost has been observed in basic computing blocks within the architecture. In this work, we have explored the developments in NML, in MTJs and more recent developments in hybrid MTJ/CMOS logic-in-memory architecture and its unique logic partitioning capability.

Performance of asynchronous transfer mode (ATM) local area and wide area networks for medical imaging transmission in clinical environment.

PubMed

Huang, H K; Wong, A W; Zhu, X

1997-01-01

Asynchronous transfer mode (ATM) technology emerges as a leading candidate for medical image transmission in both local area network (LAN) and wide area network (WAN) applications. This paper describes the performance of an ATM LAN and WAN network at the University of California, San Francisco. The measurements were obtained using an intensive care unit (ICU) server connecting to four image workstations (WS) at four different locations of a hospital-integrated picture archiving and communication system (HI-PACS) in a daily regular clinical environment. Four types of performance were evaluated: magnetic disk-to-disk, disk-to-redundant array of inexpensive disks (RAID), RAID-to-memory, and memory-to-memory. Results demonstrate that the transmission rate between two workstations can reach 5-6 Mbytes/s from RAID-to-memory, and 8-10 Mbytes/s from memory-to-memory. When the server has to send images to all four workstations simultaneously, the transmission rate to each WS is about 4 Mbytes/s. Both situations are adequate for radiologic image communications for picture archiving and communication systems (PACS) and teleradiology applications.

Efficient micromagnetics for magnetic storage devices

NASA Astrophysics Data System (ADS)

Escobar Acevedo, Marco Antonio

Micromagnetics is an important component for advancing the magnetic nanostructures understanding and design. Numerous existing and prospective magnetic devices rely on micromagnetic analysis, these include hard disk drives, magnetic sensors, memories, microwave generators, and magnetic logic. The ability to examine, describe, and predict the magnetic behavior, and macroscopic properties of nanoscale magnetic systems is essential for improving the existing devices, for progressing in their understanding, and for enabling new technologies. This dissertation describes efficient micromagnetic methods as required for magnetic storage analysis. Their performance and accuracy is demonstrated by studying realistic, complex, and relevant micromagnetic system case studies. An efficient methodology for dynamic micromagnetics in large scale simulations is used to study the writing process in a full scale model of a magnetic write head. An efficient scheme, tailored for micromagnetics, to find the minimum energy state on a magnetic system is presented. This scheme can be used to calculate hysteresis loops. An efficient scheme, tailored for micromagnetics, to find the minimum energy path between two stable states on a magnetic system is presented. This minimum energy path is intimately related to the thermal stability.

Spin-transfer torque switched magnetic tunnel junctions in magnetic random access memory

NASA Astrophysics Data System (ADS)

Sun, Jonathan Z.

2016-10-01

Spin-transfer torque (or spin-torque, or STT) based magnetic tunnel junction (MTJ) is at the heart of a new generation of magnetism-based solid-state memory, the so-called spin-transfer-torque magnetic random access memory, or STT-MRAM. Over the past decades, STT-based switchable magnetic tunnel junction has seen progress on many fronts, including the discovery of (001) MgO as the most favored tunnel barrier, which together with (bcc) Fe or FeCo alloy are yielding best demonstrated tunnel magneto-resistance (TMR); the development of perpendicularly magnetized ultrathin CoFeB-type of thin films sufficient to support high density memories with junction sizes demonstrated down to 11nm in diameter; and record-low spin-torque switching threshold current, giving best reported switching efficiency over 5 kBT/μA. Here we review the basic device properties focusing on the perpendicularly magnetized MTJs, both in terms of switching efficiency as measured by sub-threshold, quasi-static methods, and of switching speed at super-threshold, forced switching. We focus on device behaviors important for memory applications that are rooted in fundamental device physics, which highlights the trade-off of device parameters for best suitable system integration.

Magnetic properties of checkerboard lattice: a Monte Carlo study

NASA Astrophysics Data System (ADS)

Jabar, A.; Masrour, R.; Hamedoun, M.; Benyoussef, A.

2017-12-01

The magnetic properties of ferrimagnetic mixed-spin Ising model in the checkerboard lattice are studied using Monte Carlo simulations. The variation of total magnetization and magnetic susceptibility with the crystal field has been established. We have obtained a transition from an order to a disordered phase in some critical value of the physical variables. The reduced transition temperature is obtained for different exchange interactions. The magnetic hysteresis cycles have been established. The multiples hysteresis cycle in checkerboard lattice are obtained. The multiples hysteresis cycle have been established. The ferrimagnetic mixed-spin Ising model in checkerboard lattice is very interesting from the experimental point of view. The mixed spins system have many technological applications such as in domain opto-electronics, memory, nanomedicine and nano-biological systems. The obtained results show that that crystal field induce long-range spin-spin correlations even bellow the reduced transition temperature.

Fast maximum intensity projections of large medical data sets by exploiting hierarchical memory architectures.

PubMed

Kiefer, Gundolf; Lehmann, Helko; Weese, Jürgen

2006-04-01

Maximum intensity projections (MIPs) are an important visualization technique for angiographic data sets. Efficient data inspection requires frame rates of at least five frames per second at preserved image quality. Despite the advances in computer technology, this task remains a challenge. On the one hand, the sizes of computed tomography and magnetic resonance images are increasing rapidly. On the other hand, rendering algorithms do not automatically benefit from the advances in processor technology, especially for large data sets. This is due to the faster evolving processing power and the slower evolving memory access speed, which is bridged by hierarchical cache memory architectures. In this paper, we investigate memory access optimization methods and use them for generating MIPs on general-purpose central processing units (CPUs) and graphics processing units (GPUs), respectively. These methods can work on any level of the memory hierarchy, and we show that properly combined methods can optimize memory access on multiple levels of the hierarchy at the same time. We present performance measurements to compare different algorithm variants and illustrate the influence of the respective techniques. On current hardware, the efficient handling of the memory hierarchy for CPUs improves the rendering performance by a factor of 3 to 4. On GPUs, we observed that the effect is even larger, especially for large data sets. The methods can easily be adjusted to different hardware specifics, although their impact can vary considerably. They can also be used for other rendering techniques than MIPs, and their use for more general image processing task could be investigated in the future.

Guest Editorial

NASA Astrophysics Data System (ADS)

Alagarsamy, Perumal; Srinivasan, Ananthakrishnan; Pandian, Subramanian

2014-09-01

Magnetic materials play a vital role in technologies ranging from those concerning the day-to-day life of man to special applications in nuclear, space, defense and health sectors. Despite several notable developments in theoretical and experimental fronts in the area of magnetism and magnetic materials and the ever increasing number of researchers and engineers actively engaged in these topics, only a few international conferences are being organized in these topics in Asia. To address this lacuna, the second edition of International Conference on Magnetic Materials and Applications - 2013 (MagMA-2013) was jointly hosted and organized by Indian Institute of Technology Guwahati (IITG) under the auspicious of Magnetics Society of India (MSI). MagMA-2013 devoted special sessions for (A) Soft and Hard Magnetic Materials and their Applications, (B) Magnetic Thin Films, Particles and Nanostructures, (C) Magnetic Recording, Memories, and Spintronics, (D) Strongly Correlated Electron System, (E) Fundamental Magnetic Properties and Cooperative Phenomena, (F) Novel Magnetic Materials and Device Applications, (G) Magnet Industry - Product and Marketing and (H) Interdisciplinary Topics in Magnetism. These sessions included plenary and invited talks by speakers drawn from the international arena who shared their expertise and experiences on recent developments in various topics such as (1) conventional (bulk and powder metallurgy processed) soft and hard magnetic materials, (2) novel forms (nanostructured, particulate/granular, composite, thin film and multilayered films) of soft and hard magnetic materials and their hybrids, (3) sensors and actuators based on magnetoresistive, magnetostrictive, magnetoelastic and magnetoimpedance materials, (4) magnetic storage and its trends, (5) multi-disciplinary area of bio-magnetism and applications of magnetic materials in medicine, (6) newly emerging interdisciplinary topics in magnetism and (7) recent progress in theoretical and computational techniques in magnetism.

Feedforward-Feedback Hybrid Control for Magnetic Shape Memory Alloy Actuators Based on the Krasnosel'skii-Pokrovskii Model

PubMed Central

Zhou, Miaolei; Zhang, Qi; Wang, Jingyuan

2014-01-01

As a new type of smart material, magnetic shape memory alloy has the advantages of a fast response frequency and outstanding strain capability in the field of microdrive and microposition actuators. The hysteresis nonlinearity in magnetic shape memory alloy actuators, however, limits system performance and further application. Here we propose a feedforward-feedback hybrid control method to improve control precision and mitigate the effects of the hysteresis nonlinearity of magnetic shape memory alloy actuators. First, hysteresis nonlinearity compensation for the magnetic shape memory alloy actuator is implemented by establishing a feedforward controller which is an inverse hysteresis model based on Krasnosel'skii-Pokrovskii operator. Secondly, the paper employs the classical Proportion Integration Differentiation feedback control with feedforward control to comprise the hybrid control system, and for further enhancing the adaptive performance of the system and improving the control accuracy, the Radial Basis Function neural network self-tuning Proportion Integration Differentiation feedback control replaces the classical Proportion Integration Differentiation feedback control. Utilizing self-learning ability of the Radial Basis Function neural network obtains Jacobian information of magnetic shape memory alloy actuator for the on-line adjustment of parameters in Proportion Integration Differentiation controller. Finally, simulation results show that the hybrid control method proposed in this paper can greatly improve the control precision of magnetic shape memory alloy actuator and the maximum tracking error is reduced from 1.1% in the open-loop system to 0.43% in the hybrid control system. PMID:24828010

Feedforward-feedback hybrid control for magnetic shape memory alloy actuators based on the Krasnosel'skii-Pokrovskii model.

PubMed

Zhou, Miaolei; Zhang, Qi; Wang, Jingyuan

2014-01-01

As a new type of smart material, magnetic shape memory alloy has the advantages of a fast response frequency and outstanding strain capability in the field of microdrive and microposition actuators. The hysteresis nonlinearity in magnetic shape memory alloy actuators, however, limits system performance and further application. Here we propose a feedforward-feedback hybrid control method to improve control precision and mitigate the effects of the hysteresis nonlinearity of magnetic shape memory alloy actuators. First, hysteresis nonlinearity compensation for the magnetic shape memory alloy actuator is implemented by establishing a feedforward controller which is an inverse hysteresis model based on Krasnosel'skii-Pokrovskii operator. Secondly, the paper employs the classical Proportion Integration Differentiation feedback control with feedforward control to comprise the hybrid control system, and for further enhancing the adaptive performance of the system and improving the control accuracy, the Radial Basis Function neural network self-tuning Proportion Integration Differentiation feedback control replaces the classical Proportion Integration Differentiation feedback control. Utilizing self-learning ability of the Radial Basis Function neural network obtains Jacobian information of magnetic shape memory alloy actuator for the on-line adjustment of parameters in Proportion Integration Differentiation controller. Finally, simulation results show that the hybrid control method proposed in this paper can greatly improve the control precision of magnetic shape memory alloy actuator and the maximum tracking error is reduced from 1.1% in the open-loop system to 0.43% in the hybrid control system.

Fabrication of magnetic bubble memory overlay

NASA Technical Reports Server (NTRS)

1973-01-01

Self-contained magnetic bubble memory overlay is fabricated by process that employs epitaxial deposition to form multi-layered complex of magnetically active components on single chip. Overlay fabrication comprises three metal deposition steps followed by subtractive etch.

Enhanced magnetic hysteresis in Ni-Mn-Ga single crystal and its influence on magnetic shape memory effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heczko, O., E-mail: heczko@fzu.cz; Drahokoupil, J.; Straka, L.

2015-05-07

Enhanced magnetic hysteresis due to boron doping in combination with magnetic shape memory effect in Ni-Mn-Ga single crystal results in new interesting functionality of magnetic shape memory (MSM) alloys such as mechanical demagnetization. In Ni{sub 50.0}Mn{sub 28.5}Ga{sub 21.5} single crystal, the boron doping increased magnetic coercivity from few Oe to 270 Oe while not affecting the transformation behavior and 10 M martensite structure. However, the magnetic field needed for MSM effect also increased in doped sample. The magnetic behavior is compared to undoped single crystal of similar composition. The evidence from the X-ray diffraction, magnetic domain structure, magnetization loops, and temperature evolutionmore » of the magnetic coercivity points out that the enhanced hysteresis is caused by stress-induced anisotropy.« less

Room-temperature antiferromagnetic memory resistor.

PubMed

Marti, X; Fina, I; Frontera, C; Liu, Jian; Wadley, P; He, Q; Paull, R J; Clarkson, J D; Kudrnovský, J; Turek, I; Kuneš, J; Yi, D; Chu, J-H; Nelson, C T; You, L; Arenholz, E; Salahuddin, S; Fontcuberta, J; Jungwirth, T; Ramesh, R

2014-04-01

The bistability of ordered spin states in ferromagnets provides the basis for magnetic memory functionality. The latest generation of magnetic random access memories rely on an efficient approach in which magnetic fields are replaced by electrical means for writing and reading the information in ferromagnets. This concept may eventually reduce the sensitivity of ferromagnets to magnetic field perturbations to being a weakness for data retention and the ferromagnetic stray fields to an obstacle for high-density memory integration. Here we report a room-temperature bistable antiferromagnetic (AFM) memory that produces negligible stray fields and is insensitive to strong magnetic fields. We use a resistor made of a FeRh AFM, which orders ferromagnetically roughly 100 K above room temperature, and therefore allows us to set different collective directions for the Fe moments by applied magnetic field. On cooling to room temperature, AFM order sets in with the direction of the AFM moments predetermined by the field and moment direction in the high-temperature ferromagnetic state. For electrical reading, we use an AFM analogue of the anisotropic magnetoresistance. Our microscopic theory modelling confirms that this archetypical spintronic effect, discovered more than 150 years ago in ferromagnets, is also present in AFMs. Our work demonstrates the feasibility of fabricating room-temperature spintronic memories with AFMs, which in turn expands the base of available magnetic materials for devices with properties that cannot be achieved with ferromagnets.

Mass storage technology in networks

NASA Astrophysics Data System (ADS)

Ishii, Katsunori; Takeda, Toru; Itao, Kiyoshi; Kaneko, Reizo

1990-08-01

Trends and features of mass storage subsystems in network are surveyed and their key technologies spotlighted. Storage subsystems are becoming increasingly important in new network systems in which communications and data processing are systematically combined. These systems require a new class of high-performance mass-information storage in order to effectively utilize their processing power. The requirements of high transfer rates, high transactional rates and large storage capacities, coupled with high functionality, fault tolerance and flexibility in configuration, are major challenges in storage subsystems. Recent progress in optical disk technology has resulted in improved performance of on-line external memories to optical disk drives, which are competing with mid-range magnetic disks. Optical disks are more effective than magnetic disks in using low-traffic random-access file storing multimedia data that requires large capacity, such as in archive use and in information distribution use by ROM disks. Finally, it demonstrates image coded document file servers for local area network use that employ 130mm rewritable magneto-optical disk subsystems.

Solid solutions of MnSb as recording media in optical memory applications

NASA Astrophysics Data System (ADS)

Bai, V. S.; Rama Rao, K. V. S.

1984-03-01

Possibilities regarding the use of larger packing densities and faster access times make it potentially feasible to employ optical technology for the development of computer data storage systems with a performance which is 2-4 orders of magnitude better than that of conventional systems. The information can be stored on thin magnetic films using the technique of laser Curie point writing and retrieved with the aid of magnetooptic readout. Thin films of MnBi have been studied extensively as a prospective storage medium. However, certain difficulties arise in connection with a phase transformation. For these reasons, the present investigation is concerned with the possibility of employing as storage medium MnSb, in which such a phase transformation is absent. In the case of MnSb, a change regarding the easy direction of magnetization would be required. Attention is given to several solid solutions of MnSb and the merits of these materials for optical memory applications.

Integrated semiconductor-magnetic random access memory system

NASA Technical Reports Server (NTRS)

Katti, Romney R. (Inventor); Blaes, Brent R. (Inventor)

2001-01-01

The present disclosure describes a non-volatile magnetic random access memory (RAM) system having a semiconductor control circuit and a magnetic array element. The integrated magnetic RAM system uses CMOS control circuit to read and write data magnetoresistively. The system provides a fast access, non-volatile, radiation hard, high density RAM for high speed computing.

Garnet Random-Access Memory

NASA Technical Reports Server (NTRS)

Katti, Romney R.

1995-01-01

Random-access memory (RAM) devices of proposed type exploit magneto-optical properties of magnetic garnets exhibiting perpendicular anisotropy. Magnetic writing and optical readout used. Provides nonvolatile storage and resists damage by ionizing radiation. Because of basic architecture and pinout requirements, most likely useful as small-capacity memory devices.

Magnetic stimulation of the dorsolateral prefrontal cortex dissociates fragile visual short-term memory from visual working memory.

PubMed

Sligte, Ilja G; Wokke, Martijn E; Tesselaar, Johannes P; Scholte, H Steven; Lamme, Victor A F

2011-05-01

To guide our behavior in successful ways, we often need to rely on information that is no longer in view, but maintained in visual short-term memory (VSTM). While VSTM is usually broken down into iconic memory (brief and high-capacity store) and visual working memory (sustained, yet limited-capacity store), recent studies have suggested the existence of an additional and intermediate form of VSTM that depends on activity in extrastriate cortex. In previous work, we have shown that this fragile form of VSTM can be dissociated from iconic memory. In the present study, we provide evidence that fragile VSTM is different from visual working memory as magnetic stimulation of the right dorsolateral prefrontal cortex (DLPFC) disrupts visual working memory, while leaving fragile VSTM intact. In addition, we observed that people with high DLPFC activity had superior working memory capacity compared to people with low DLPFC activity, and only people with high DLPFC activity really showed a reduction in working memory capacity in response to magnetic stimulation. Altogether, this study shows that VSTM consists of three stages that have clearly different characteristics and rely on different neural structures. On the methodological side, we show that it is possible to predict individual susceptibility to magnetic stimulation based on functional MRI activity. Crown Copyright © 2010. Published by Elsevier Ltd. All rights reserved.

Anisotropic modulation of magnetic properties and the memory effect in a wide-band (011)-Pr0.7Sr0.3MnO3/PMN-PT heterostructure.

PubMed

Zhao, Ying-Ying; Wang, Jing; Kuang, Hao; Hu, Feng-Xia; Liu, Yao; Wu, Rong-Rong; Zhang, Xi-Xiang; Sun, Ji-Rong; Shen, Bao-Gen

2015-04-24

Memory effect of electric-field control on magnetic behavior in magnetoelectric composite heterostructures has been a topic of interest for a long time. Although the piezostrain and its transfer across the interface of ferroelectric/ferromagnetic films are known to be important in realizing magnetoelectric coupling, the underlying mechanism for nonvolatile modulation of magnetic behaviors remains a challenge. Here, we report on the electric-field control of magnetic properties in wide-band (011)-Pr0.7Sr0.3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 heterostructures. By introducing an electric-field-induced in-plane anisotropic strain field during the cooling process from room temperature, we observe an in-plane anisotropic, nonvolatile modulation of magnetic properties in a wide-band Pr0.7Sr0.3MnO3 film at low temperatures. We attribute this anisotropic memory effect to the preferential seeding and growth of ferromagnetic (FM) domains under the anisotropic strain field. In addition, we find that the anisotropic, nonvolatile modulation of magnetic properties gradually diminishes as the temperature approaches FM transition, indicating that the nonvolatile memory effect is temperature dependent. By taking into account the competition between thermal energy and the potential barrier of the metastable magnetic state induced by the anisotropic strain field, this distinct memory effect is well explained, which provides a promising approach for designing novel electric-writing magnetic memories.

Uniaxial stress control of skyrmion phase

PubMed Central

Nii, Y.; Nakajima, T.; Kikkawa, A.; Yamasaki, Y.; Ohishi, K.; Suzuki, J.; Taguchi, Y.; Arima, T.; Tokura, Y.; Iwasa, Y.

2015-01-01

Magnetic skyrmions, swirling nanometric spin textures, have been attracting increasing attention by virtue of their potential applications for future memory technology and their emergent electromagnetism. Despite a variety of theoretical proposals oriented towards skyrmion-based electronics (that is, skyrmionics), few experiments have succeeded in creating, deleting and transferring skyrmions, and the manipulation methodologies have thus far remained limited to electric, magnetic and thermal stimuli. Here, we demonstrate a new approach for skyrmion phase control based on a mechanical stress. By continuously scanning uniaxial stress at low temperatures, we can create and annihilate a skyrmion crystal in a prototypical chiral magnet MnSi. The critical stress is merely several tens of MPa, which is easily accessible using the tip of a conventional cantilever. The present results offer a new guideline even for single skyrmion control that requires neither electric nor magnetic biases and consumes extremely little energy. PMID:26460119

Uniaxial stress control of skyrmion phase.

PubMed

Nii, Y; Nakajima, T; Kikkawa, A; Yamasaki, Y; Ohishi, K; Suzuki, J; Taguchi, Y; Arima, T; Tokura, Y; Iwasa, Y

2015-10-13

Magnetic skyrmions, swirling nanometric spin textures, have been attracting increasing attention by virtue of their potential applications for future memory technology and their emergent electromagnetism. Despite a variety of theoretical proposals oriented towards skyrmion-based electronics (that is, skyrmionics), few experiments have succeeded in creating, deleting and transferring skyrmions, and the manipulation methodologies have thus far remained limited to electric, magnetic and thermal stimuli. Here, we demonstrate a new approach for skyrmion phase control based on a mechanical stress. By continuously scanning uniaxial stress at low temperatures, we can create and annihilate a skyrmion crystal in a prototypical chiral magnet MnSi. The critical stress is merely several tens of MPa, which is easily accessible using the tip of a conventional cantilever. The present results offer a new guideline even for single skyrmion control that requires neither electric nor magnetic biases and consumes extremely little energy.

Advanced detectors and signal processing for bubble memories

NASA Technical Reports Server (NTRS)

Kryder, M. H.; Rasky, P. H. L.; Greve, D. W.

1985-01-01

The feasibility of combining silicon and magnetic bubble technologies is demonstrated. Results of bubble film annealing indicate that a low temperature silicon on garnet technology is the most likely one to succeed commercially. Annealing ambients are also shown to have a major effect on the magnetic properties of bubble films. Functional MOSFETs were fabricated on bubble films coated with thick (approximately 1 micron) SiO2 layers. The two main problems with these silicon on garnet MOSFETs are low electron mobilities and large gate leakage currents. Results indicate that the laser recrystallized silicon and gate oxide (SiO2) layers are contaminated. The data suggest that part of the contaminating ions originate in the sputtered oxide spacer layer and part originates in the bubble film itself. A diffusion barrier, such as silicon nitride, placed between the bubble film and the silicon layer should eliminate the contamination induced problem.

Up-to-date state of storage techniques used for large numerical data files

NASA Technical Reports Server (NTRS)

Chlouba, V.

1975-01-01

Methods for data storage and output in data banks and memory files are discussed along with a survey of equipment available for this. Topics discussed include magnetic tapes, magnetic disks, Terabit magnetic tape memory, Unicon 690 laser memory, IBM 1360 photostore, microfilm recording equipment, holographic recording, film readers, optical character readers, digital data storage techniques, and photographic recording. The individual types of equipment are summarized in tables giving the basic technical parameters.

A kilobyte rewritable atomic memory

NASA Astrophysics Data System (ADS)

Kalff, Floris; Rebergen, Marnix; Fahrenfort, Nora; Girovsky, Jan; Toskovic, Ranko; Lado, Jose; FernáNdez-Rossier, JoaquíN.; Otte, Sander

The ability to manipulate individual atoms by means of scanning tunneling microscopy (STM) opens op opportunities for storage of digital data on the atomic scale. Recent achievements in this direction include data storage based on bits encoded in the charge state, the magnetic state, or the local presence of single atoms or atomic assemblies. However, a key challenge at this stage is the extension of such technologies into large-scale rewritable bit arrays. We demonstrate a digital atomic-scale memory of up to 1 kilobyte (8000 bits) using an array of individual surface vacancies in a chlorine terminated Cu(100) surface. The chlorine vacancies are found to be stable at temperatures up to 77 K. The memory, crafted using scanning tunneling microscopy at low temperature, can be read and re-written automatically by means of atomic-scale markers, and offers an areal density of 502 Terabits per square inch, outperforming state-of-the-art hard disk drives by three orders of magnitude.

Feasibility of self-structured current accessed bubble devices in spacecraft recording systems

NASA Technical Reports Server (NTRS)

Nelson, G. L.; Krahn, D. R.; Dean, R. H.; Paul, M. C.; Lo, D. S.; Amundsen, D. L.; Stein, G. A.

1985-01-01

The self-structured, current aperture approach to magnetic bubble memory is described. Key results include: (1) demonstration that self-structured bubbles (a lattice of strongly interacting bubbles) will slip by one another in a storage loop at spacings of 2.5 bubble diameters, (2) the ability of self-structured bubbles to move past international fabrication defects (missing apertures) in the propagation conductors (defeat tolerance), and (3) moving bubbles at mobility limited speeds. Milled barriers in the epitaxial garnet are discussed for containment of the bubble lattice. Experimental work on input/output tracks, storage loops, gates, generators, and magneto-resistive detectors for a prototype device are discussed. Potential final device architectures are described with modeling of power consumption, data rates, and access times. Appendices compare the self-structured bubble memory from the device and system perspectives with other non-volatile memory technologies.

Improved Reading Gate For Vertical-Bloch-Line Memory

NASA Technical Reports Server (NTRS)

Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

1994-01-01

Improved design for reading gate of vertical-Bloch-line magnetic-bubble memory increases reliability of discrimination between binary ones and zeros. Magnetic bubbles that signify binary "1" and "0" produced by applying sufficiently large chopping currents to memory stripes. Bubbles then propagated differentially in bubble sorter. Method of discriminating between ones and zeros more reliable.

Half-State Readout In Vertical-Bloch-Line Memory

NASA Technical Reports Server (NTRS)

Katti, Romney R.; Wu, Jiin-Chuan; Stadler, Henry L.

1994-01-01

Potentially narrow margins of chirality-based chopping of magnetic stripes avoided. Half-state readout is experimental method of readout in Vertical-Bloch-Line (VBL) memory. Based on differential deflections of magnetic stripe domains in which data bits stored. To give meaning to explanation of half-state readout, see "Vertical-Bloch-Line Memory" (NPO-18467).

Evolution of topological skyrmions across the spin reorientation transition in Pt/Co/Ta multilayers

NASA Astrophysics Data System (ADS)

He, Min; Li, Gang; Zhu, Zhaozhao; Zhang, Ying; Peng, Licong; Li, Rui; Li, Jianqi; Wei, Hongxiang; Zhao, Tongyun; Zhang, X.-G.; Wang, Shouguo; Lin, Shi-Zeng; Gu, Lin; Yu, Guoqiang; Cai, J. W.; Shen, Bao-gen

2018-05-01

Magnetic skyrmions in multilayers are particularly appealing as next generation memory devices due to their topological compact size, the robustness against external perturbations, the capability of electrical driving and detection, and the compatibility with the existing spintronic technologies. To date, Néel-type skyrmions at room temperature (RT) have been studied mostly in multilayers with easy-axis magnetic anisotropy. Here, we systematically broadened the evolution of magnetic skyrmions with sub-50-nm size in a series of Pt/Co/Ta multilayers where the magnetic anisotropy is tuned continuously from easy axis to easy plane by increasing the ferromagnetic Co layer thickness. The existence of nontrivial skyrmions is identified via the combination of in situ Lorentz transmission electron microscopy (L-TEM) and Hall transport measurements. A high density of magnetic skyrmions over a wide temperature range is observed in the multilayers with easy-plane anisotropy, which will stimulate further exploration for new materials and accelerate the development of skyrmion-based spintronic devices.

Holographic memory for high-density data storage and high-speed pattern recognition

NASA Astrophysics Data System (ADS)

Gu, Claire

2002-09-01

As computers and the internet become faster and faster, more and more information is transmitted, received, and stored everyday. The demand for high density and fast access time data storage is pushing scientists and engineers to explore all possible approaches including magnetic, mechanical, optical, etc. Optical data storage has already demonstrated its potential in the competition against other storage technologies. CD and DVD are showing their advantages in the computer and entertainment market. What motivated the use of optical waves to store and access information is the same as the motivation for optical communication. Light or an optical wave has an enormous capacity (or bandwidth) to carry information because of its short wavelength and parallel nature. In optical storage, there are two types of mechanism, namely localized and holographic memories. What gives the holographic data storage an advantage over localized bit storage is the natural ability to read the stored information in parallel, therefore, meeting the demand for fast access. Another unique feature that makes the holographic data storage attractive is that it is capable of performing associative recall at an incomparable speed. Therefore, volume holographic memory is particularly suitable for high-density data storage and high-speed pattern recognition. In this paper, we review previous works on volume holographic memories and discuss the challenges for this technology to become a reality.

Effect of sample initial magnetic field on the metal magnetic memory NDT result

NASA Astrophysics Data System (ADS)

Moonesan, Mahdi; Kashefi, Mehrdad

2018-08-01

One of the major concerns regarding the use of Metal Magnetic Memory (MMM) technique is the complexity of residual magnetization effect on output signals. The present study investigates the influence of residual magnetic field on stress induced magnetization. To this end, various initial magnetic fields were induced on a low carbon steel sample, and for each level of residual magnetic field, the sample was subjected to a set of 4-point bending tests and, their corresponding MMM signals were collected from the surface of the bended sample using a tailored metal magnetic memory scanning device. Results showed a strong correlation between sample residual magnetic field and its corresponding level of stress induced magnetic field. It was observed that the sample magnetic field increases with applying the bending stress as long as the initial residual magnet field is low (i.e. <117 mG), but starts decreasing with higher levels of initial residual magnetic fields. Besides, effect of bending stress on the MMM output of a notched sample was investigated. The result, again, showed that MMM signals exhibit a drop at stress concentration zone when sample has high level of initial residual magnetic field.

Progressive freezing of interacting spins in isolated finite magnetic ensembles

NASA Astrophysics Data System (ADS)

Bhattacharya, Kakoli; Dupuis, Veronique; Le-Roy, Damien; Deb, Pritam

2017-02-01

Self-organization of magnetic nanoparticles into secondary nanostructures provides an innovative way for designing functional nanomaterials with novel properties, different from the constituent primary nanoparticles as well as their bulk counterparts. Collective magnetic properties of such complex closed packing of magnetic nanoparticles makes them more appealing than the individual magnetic nanoparticles in many technological applications. This work reports the collective magnetic behaviour of magnetic ensembles comprising of single domain Fe3O4 nanoparticles. The present work reveals that the ensemble formation is based on the re-orientation and attachment of the nanoparticles in an iso-oriented fashion at the mesoscale regime. Comprehensive dc magnetic measurements show the prevalence of strong interparticle interactions in the ensembles. Due to the close range organization of primary Fe3O4 nanoparticles in the ensemble, the spins of the individual nanoparticles interact through dipolar interactions as realized from remnant magnetization measurements. Signature of super spin glass like behaviour in the ensembles is observed in the memory studies carried out in field cooled conditions. Progressive freezing of spins in the ensembles is corroborated from the Vogel-Fulcher fit of the susceptibility data. Dynamic scaling of relaxation reasserted slow spin dynamics substantiating cluster spin glass like behaviour in the ensembles.

Unusual magnetoelectric memory and polarization reversal in the kagome staircase compound N i3V2O8

NASA Astrophysics Data System (ADS)

Liu, Y. J.; Wang, J. F.; He, Z. Z.; Lu, C. L.; Xia, Z. C.; Ouyang, Z. W.; Liu, C. B.; Chen, R.; Matsuo, A.; Kohama, Y.; Kindo, K.; Tokunaga, M.

2018-05-01

We study the electric polarization of the kagome staircase N i3V2O8 in magnetic fields up to 30 T and report a magnetoelectric memory effect controlled by bias electric fields. The explored ferroelectric phase in 19 -24 T is electrically controlled, whereas the ferroelectric phase in 2 -11 T exhibits unusual memory effects. We determine a characteristic critical magnetic field H3=11 T , below which strong memory exists and the polarization is frozen even in opposite bias fields. But when magnetic fields exceed H3, the frozen polarization is released and polarization reversal appears by tuning bias electric fields. We ascribe these phenomena to the pinning-depinning mechanism: nucleation and the accompanying pinning of chiral domain walls cooperatively induce the frozen behavior; the polarization reversal results from the depinning through the ferroelectrtic-to-paraelectric phase transition in high magnetic fields. Our experimental results reveal that the first-order phase transition plays an important role in these unusual memory effects.

A ferrofluid-based neural network: design of an analogue associative memory

NASA Astrophysics Data System (ADS)

Palm, R.; Korenivski, V.

2009-02-01

We analyse an associative memory based on a ferrofluid, consisting of a system of magnetic nano-particles suspended in a carrier fluid of variable viscosity subject to patterns of magnetic fields from an array of input and output magnetic pads. The association relies on forming patterns in the ferrofluid during a training phase, in which the magnetic dipoles are free to move and rotate to minimize the total energy of the system. Once equilibrated in energy for a given input-output magnetic field pattern pair, the particles are fully or partially immobilized by cooling the carrier liquid. Thus produced particle distributions control the memory states, which are read out magnetically using spin-valve sensors incorporated into the output pads. The actual memory consists of spin distributions that are dynamic in nature, realized only in response to the input patterns that the system has been trained for. Two training algorithms for storing multiple patterns are investigated. Using Monte Carlo simulations of the physical system, we demonstrate that the device is capable of storing and recalling two sets of images, each with an accuracy approaching 100%.

Magnetic and conventional shape memory behavior of Mn-Ni-Sn and Mn-Ni-Sn(Fe) alloys

NASA Astrophysics Data System (ADS)

Turabi, A. S.; Lázpita, P.; Sasmaz, M.; Karaca, H. E.; Chernenko, V. A.

2016-05-01

Magnetic and conventional shape memory properties of Mn49Ni42Sn9(at.%) and Mn49Ni39Sn9Fe3(at.%) polycrystalline alloys exhibiting martensitic transformation from ferromagnetic austenite into weakly magnetic martensite are characterized under compressive stress and magnetic field. Magnetization difference between transforming phases drastically increases, while transformation temperature decreases with the addition of Fe. Both Mn49Ni42Sn9 and Mn49Ni39Sn9Fe3 alloys show remarkable superelastic and shape memory properties with recoverable strain of 4% and 3.5% under compression at room temperature, respectively. These characteristics can be counted as extraordinary among the polycrystalline NiMn-based magnetic shape memory alloys. Critical stress for phase transformation was increased by 34 MPa in Mn49Ni39Sn9Fe3 and 21 MPa in Mn49Ni42Sn9 at 9 T, which can be qualitatively understood in terms of thermodynamic Clausius-Clapeyron relationships and in the framework of the suggested physical concept of a volume magnetostress.

Exploitation of Smart Materials and Sensors as Disruptive Technologies

DTIC Science & Technology

2010-03-01

commercially available SMA, with current work aimed at new NiTi–X (X = Fe, Nb, Cu) alloys to further extend their range of properties and potential...ultra-light and micro-air vehicles. However, in common with alloy systems challenges exist regarding the long-term properties of polymeric-based SM... properties of single crystals of Ni-Mn-Ga magnetic shape memory alloys ", in Proc. SPIE, 186–197 (2004). 41 Gharghouri, M. A., Elsawy, A., & Hyatt

The 1973 GSFC battery workshop, second day. [technology transfer

NASA Technical Reports Server (NTRS)

1973-01-01

Technological progress in the development, testing, and manufacturing of nickel-cadmium battery cells as well as hydrogen cells is presented. The following major topics were discussed: (1) carbonate analysis; (2) nickel-cadmium memory effect; (3) use of batteries in an automatic acquisition and control system; (4) accelerated testing; (5) formulation of a mathematical odel for a nickel-cadmium cell; (6) development of a light weight nickel-cadmium battery capable of delivering 20 watt hours per pound; (7) magnetic testing of nickel-cadmium cells; (8) design and performance characteristics of nickel-hydrogen and silver-hydrogen cells; and (9) development of a semiprismatic cell design. For Vol. 1, see N75-15152.

Development and Testing of an Axial Halbach Magnetic Bearing

NASA Technical Reports Server (NTRS)

Eichenberg, Dennis J.; Gallo, Christopher A.; Thompson, William K.

2006-01-01

The NASA Glenn Research Center has developed and tested a revolutionary Axial Halbach Magnetic Bearing. The objective of this work is to develop a viable non-contact magnetic thrust bearing utilizing Halbach arrays for all-electric flight, and many other applications. This concept will help to reduce harmful emissions, reduce the Nation s dependence on fossil fuels and mitigate many of the concerns and limitations encountered in conventional axial bearings such as bearing wear, leaks, seals and friction loss. The Axial Halbach Magnetic Bearing is inherently stable and requires no active feedback control system or superconductivity as required in many magnetic bearing designs. The Axial Halbach Magnetic Bearing is useful for very high speed applications including turbines, instrumentation, medical systems, computer memory systems, and space power systems such as flywheels. Magnetic fields suspend and support a rotor assembly within a stator. Advanced technologies developed for particle accelerators, and currently under development for maglev trains and rocket launchers, served as the basis for this application. Experimental hardware was successfully designed and developed to validate the basic principles and analyses. The report concludes that the implementation of Axial Halbach Magnetic Bearings can provide significant improvements in rotational system performance and reliability.

Low intensity magnetic field influences short-term memory: A study in a group of healthy students.

PubMed

Navarro, Enrique A; Gomez-Perretta, Claudio; Montes, Francisco

2016-01-01

This study analyzes if an external magnetic stimulus (2 kHz and approximately 0.1 μT applied near frontal cortex) influences working memory, perception, binary decision, motor execution, and sustained attention in humans. A magnetic stimulus and a sham stimulus were applied to both sides of the head (frontal cortex close to temporal-parietal area) in young and healthy male test subjects (n = 65) while performing Sternberg's memory scanning task. There was a significant change in reaction time. Times recorded for perception, sustained attention, and motor execution were lower in exposed subjects (P < 0.01). However, time employed in binary decision increased for subjects exposed to magnetic fields. From results, it seems that a low intensity 2 kHz exposure modifies short-term working memory, as well as perception, binary decision, motor execution, and sustained attention. © 2015 Wiley Periodicals, Inc.

Credibility assessments: operational issues and technology impact for law enforcement applications

NASA Astrophysics Data System (ADS)

Ryan, Andrew H., Jr.; Pavlidis, Ioannis; Rohrbaugh, J. W.; Marchak, Frank; Kozel, F. Andrew

2003-09-01

Law Enforcement personnel are faced with new challenges to rapidly assess the credibility of statements made by individuals in airports, border crossings, and a variety of environments not conducive to interviews. New technologies may offer assistance to law enforcement personnel in the interview and interrogation process. Additionally, homeland defense against terrorism challenges scientists to develop new methods of assessing truthfulness and credibility in humans. Current findings of four advanced research projects looking at emerging technologies in the credibility assessment are presented for discussion. This paper will discuss research efforts on four emerging technologies now underway at DoDPI and other institutions. These include: (1) Thermal Image Analysis (TIA); (2) Laser Doppler Vibrometry (LDV); (3) Eye Movement based Memory Assessment (EMMA); and (4) functional Magnetic Resonance Imaging (fMRI). A description each technique, the current state of these research efforts, and an overview of the potential for each of these emerging technologies will be provided.

Precision measurement of magnetic characteristics of an article with nullification of external magnetic fields

NASA Technical Reports Server (NTRS)

Honess, Shawn B. (Inventor); Narvaez, Pablo (Inventor); Mcauley, James M. (Inventor)

1992-01-01

An apparatus for characterizing the magnetic field of a device under test is discussed. The apparatus is comprised of five separate devices: (1) a device for nullifying the ambient magnetic fields in a test environment area with a constant applied magnetic field; (2) a device for rotating the device under test in the test environment area; (3) a device for sensing the magnetic field (to obtain a profile of the magnetic field) at a sensor location which is along the circumference of rotation; (4) a memory for storing the profiles; and (5) a processor coupled to the memory for characterizing the magnetic field of the device from the magnetic field profiles thus obtained.

Optical mass memories

NASA Technical Reports Server (NTRS)

Bailey, G. A.

1976-01-01

Optical and magnetic variants in the design of trillion-bit read/write memories are compared and tabulated. Components and materials suitable for a random access read/write nonmoving memory system are examined, with preference given to holography and photoplastic materials. Advantages and deficiencies of photoplastics are reviewed. Holographic page composer design, essential features of an optical memory with no moving parts, fiche-oriented random access memory design, and materials suitable for an efficient photoplastic fiche are considered. The optical variants offer advantages in lower volume and weight at data transfer rates near 1 Mbit/sec, but power drain is of the same order as for the magnetic variants (tape memory, disk memory). The mechanical properties of photoplastic film materials still leave much to be desired.

Non-Volatile Memory Technology Symposium 2000: Proceedings

NASA Technical Reports Server (NTRS)

Aranki, Nazeeh (Editor)

2000-01-01

This publication contains the proceedings for the Non-Volatile Memory Technology Symposium 2000 that was held on November 15-16, 2000 in Arlington, Virginia. The proceedings contains a wide range of papers that cover the presentations of myriad advances in the nonvolatile memory technology during the recent past including memory cell design, simulations, radiation environment, and emerging memory technologies. The papers presented in the proceedings address the design challenges and applications and deals with newer, emerging memory technologies as well as related issues of radiation environment and die packaging.

New Content Addressable Memory (CAM) Technologies for Big Data and Intelligent Electronics Enabled by Magneto-Electric Ternary CAM

DTIC Science & Technology

2017-12-11

provides ultra-low energy search operations. To improve throughput, the in-array pipeline scheme has been developed, allowing the MeTCAM to operate at a...controlled magnetic tunnel junction (VC-MTJ), which not only reduces cell area (thus achieving higher density) but also eliminates standby energy . This...Variations of the cell design are presented and evaluated. The results indicated a potential 90x improvement in the energy efficiency and a 50x

Design and application of a mechanical load frame for in situ investigation of ferromagnetic shape memory alloys by magnetic force microscopy.

PubMed

Niklasch, D; Maier, H J; Karaman, I

2008-11-01

An in situ mechanical load frame has been developed for a commercially available atomic force microscope. This frame allows examining changes in topography and magnetic domain configuration under a given constant load or strain. First results obtained on Ni-Mn-Ga ferromagnetic shape memory alloy single crystals are presented. The magnetic force microscopy (MFM) measurements under different strain levels confirm the one-to-one correspondence, i.e., the magnetomicrostructural coupling between the martensite twins and the magnetic domains. Additionally, the growth of the twin variant with favorable orientation to the compression axis during martensite detwinning was observed. It will be shown that this load frame can be used for the investigation of the relationship between the microstructure and the magnetic domain structure in ferromagnetic shape memory alloys by MFM.

Out-of-plane chiral domain wall spin-structures in ultrathin in-plane magnets

DOE PAGES

Chen, Gong; Kang, Sang Pyo; Ophus, Colin; ...

2017-05-19

Chiral spin textures in ultrathin films, such as skyrmions or chiral domain walls, are believed to offer large performance advantages in the development of novel spintronics technologies. While in-plane magnetized films have been studied extensively as media for current- and field-driven domain wall dynamics with applications in memory or logic devices, the stabilization of chiral spin textures in in-plane magnetized films has remained rare. Here we report a phase of spin structures in an in-plane magnetized ultrathin film system where out-of-plane spin orientations within domain walls are stable. Moreover, while domain walls in in-plane films are generally expected to bemore » non-chiral, we show that right-handed spin rotations are strongly favoured in this system, due to the presence of the interfacial Dzyaloshinskii-Moriya interaction. These results constitute a platform to explore unconventional spin dynamics and topological phenomena that may enable high-performance in-plane spin-orbitronics devices.« less

Designing quantum dots for solotronics.

PubMed

Kobak, J; Smoleński, T; Goryca, M; Papaj, M; Gietka, K; Bogucki, A; Koperski, M; Rousset, J-G; Suffczyński, J; Janik, E; Nawrocki, M; Golnik, A; Kossacki, P; Pacuski, W

2014-01-01

Solotronics, optoelectronics based on solitary dopants, is an emerging field of research and technology reaching the ultimate limit of miniaturization. It aims at exploiting quantum properties of individual ions or defects embedded in a semiconductor matrix. It has already been shown that optical control of a magnetic ion spin is feasible using the carriers confined in a quantum dot. However, a serious obstacle was the quenching of the exciton luminescence by magnetic impurities. Here we show, by photoluminescence studies on thus-far-unexplored individual CdTe dots with a single cobalt ion and CdSe dots with a single manganese ion, that even if energetically allowed, nonradiative exciton recombination through single-magnetic-ion intra-ionic transitions is negligible in such zero-dimensional structures. This opens solotronics for a wide range of as yet unconsidered systems. On the basis of results of our single-spin relaxation experiments and on the material trends, we identify optimal magnetic-ion quantum dot systems for implementation of a single-ion-based spin memory.

Designing quantum dots for solotronics

PubMed Central

Kobak, J.; Smoleński, T.; Goryca, M.; Papaj, M.; Gietka, K.; Bogucki, A.; Koperski, M.; Rousset, J.-G.; Suffczyński, J.; Janik, E.; Nawrocki, M.; Golnik, A.; Kossacki, P.; Pacuski, W.

2014-01-01

Solotronics, optoelectronics based on solitary dopants, is an emerging field of research and technology reaching the ultimate limit of miniaturization. It aims at exploiting quantum properties of individual ions or defects embedded in a semiconductor matrix. It has already been shown that optical control of a magnetic ion spin is feasible using the carriers confined in a quantum dot. However, a serious obstacle was the quenching of the exciton luminescence by magnetic impurities. Here we show, by photoluminescence studies on thus-far-unexplored individual CdTe dots with a single cobalt ion and CdSe dots with a single manganese ion, that even if energetically allowed, nonradiative exciton recombination through single-magnetic-ion intra-ionic transitions is negligible in such zero-dimensional structures. This opens solotronics for a wide range of as yet unconsidered systems. On the basis of results of our single-spin relaxation experiments and on the material trends, we identify optimal magnetic-ion quantum dot systems for implementation of a single-ion-based spin memory. PMID:24463946

Current-driven dynamics of skyrmions stabilized in MnSi nanowires revealed by topological Hall effect

PubMed Central

Liang, Dong; DeGrave, John P.; Stolt, Matthew J.; Tokura, Yoshinori; Jin, Song

2015-01-01

Skyrmions hold promise for next-generation magnetic storage as their nanoscale dimensions may enable high information storage density and their low threshold for current-driven motion may enable ultra-low energy consumption. Skyrmion-hosting nanowires not only serve as a natural platform for magnetic racetrack memory devices but also stabilize skyrmions. Here we use the topological Hall effect (THE) to study phase stability and current-driven dynamics of skyrmions in MnSi nanowires. THE is observed in an extended magnetic field-temperature window (15–30 K), suggesting stabilization of skyrmions in nanowires compared with the bulk. Furthermore, we show in nanowires that under the high current density of 108–109 A m−2, the THE decreases with increasing current densities, which demonstrates the current-driven motion of skyrmions generating the emergent electric field in the extended skyrmion phase region. These results open up the exploration of skyrmions in nanowires for fundamental physics and magnetic storage technologies. PMID:26400204

Nanoscale Reactive Ion Etching of Silicon Nitride Thin Films for Embedded Nanomagnetic Device Fabrication

NASA Astrophysics Data System (ADS)

Hibbard-Lubow, David Luke

The demands of digital memory have increased exponentially in recent history, requiring faster, smaller and more accurate storage methods. Two promising solutions to this ever-present problem are Bit Patterned Media (BPM) and Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM). Producing these technologies requires difficult and expensive fabrication techniques. Thus, the production processes must be optimized to allow these storage methods to compete commercially while continuing to increase their information storage density and reliability. I developed a process for the production of nanomagnetic devices (which can take the form of several types of digital memory) embedded in thin silicon nitride films. My focus was on optimizing the reactive ion etching recipe required to embed the device in the film. Ultimately, I found that recipe 37 (Power: 250W, CF4 nominal/actual flow rate: 25/25.4 sccm, O2 nominal/actual flow rate: 3.1/5.2 sccm, which gave a maximum pressure around 400 mTorr) gave the most repeatable and anisotropic results. I successfully used processes described in this thesis to make embedded nanomagnets, which could be used as bit patterned media. Another promising application of this work is to make embedded magnetic tunneling junctions, which are the storage medium used in MRAM. Doing so will require still some tweaks to the fabrication methods. Techniques for making these changes and their potential effects are discussed.

Magnetization of La2-xSrxNiO4+δ (0⩽x⩽0.5) : Spin-glass and memory effects

NASA Astrophysics Data System (ADS)

Freeman, P. G.; Boothroyd, A. T.; Prabhakaran, D.; Lorenzana, J.

2006-01-01

We have studied the magnetization of a series of spin-charge-ordered La2-xSrxNiO4+δ single crystals with 0⩽x⩽0.5 . For fields applied parallel to the ab plane there is a large irreversibility below a temperature TF1˜50K and a smaller irreversibility that persists up to near the charge-ordering temperature. We observed memory effects in the thermoremnant magnetization across the entire doping range. We found that these materials retain a memory of the temperature at which an external field was removed and that there is a pronounced increase in the thermoremnant magnetization when the system is warmed through a spin reorientation transition.

Fundamentals of thinking, patterns

NASA Astrophysics Data System (ADS)

Gafurov, O. M.; Gafurov, D. O.; Syryamkin, V. I.

2018-05-01

The authors analyze the fundamentals of thinking and propose to consider a model of the brain based on the presence of magnetic properties of gliacytes (Schwann cells) because of their oxygen saturation (oxygen has paramagnetic properties). The authors also propose to take into account the motion of electrical discharges through synapses causing electric and magnetic fields as well as additional effects such as paramagnetic resonance, which allows combining multisensory object-related information located in different parts of the brain. Therefore, the events of the surrounding world are reflected and remembered in the cortex columns, thus, creating isolated subnets with altered magnetic properties (patterns) and subsequently participate in recognition of objects, form a memory, and so on. The possibilities for the pattern-based thinking are based on the practical experience of applying methods and technologies of artificial neural networks in the form of a neuroemulator and neuromorphic computing devices.

Fast and efficient STT switching in MTJ using additional transient pulse current

NASA Astrophysics Data System (ADS)

Pathak, Sachin; Cha, Jongin; Jo, Kangwook; Yoon, Hongil; Hong, Jongill

2017-06-01

We propose a profile of write pulse current-density to switch magnetization in a perpendicular magnetic tunnel junction to reduce switching time and write energy as well. Our simulated results show that an overshoot transient pulse current-density (current spike) imposed to conventional rectangular-shaped pulse current-density (main pulse) significantly improves switching speed that yields the reduction in write energy accordingly. For example, we could dramatically reduce the switching time by 80% and thereby reduce the write energy over 9% in comparison to the switching without current spike. The current spike affects the spin dynamics of the free layer and reduces the switching time mainly due to spin torque induced. On the other hand, the large Oersted field induced causes changes in spin texture. We believe our proposed write scheme can make a breakthrough in magnetic random access memory technology seeking both high speed operation and low energy consumption.

Structural and Electromagnetic Properties of Ni-Mn-Ga Thin Films Deposited on Si Substrates

NASA Astrophysics Data System (ADS)

Pereira, M. J.; Lourenço, A. A. C. S.; Amaral, V. S.

2014-07-01

Ni2MnGa thin films raise great interest due to their properties, which provide them with strong potential for technological applications. Ni2MnGa thin films were prepared by r.f. sputtering deposition on Si substrates at low temperature (400 ºC). Film thicknesses in the range 10-120 nm were obtained. A study of the structural, magnetic and electrical properties of the films is presented. We find that the deposited films show some degree of crystallinity, with coexisting cubic and tetragonal structural phases, the first one being preponderant over the latter, particularly in the thinner films. The films possess soft magnetic properties and their coercivity is thickness dependent in the range 15-200 Oe at 300K. Electrical resistivity measurements signal the structural transition and suggest the occurrence of avalanche and return-point memory effects, in temperature cycling through the magnetic/structural transition range.

Pt thickness dependence of spin Hall effect switching of in-plane magnetized CoFeB free layers studied by differential planar Hall effect

NASA Astrophysics Data System (ADS)

Mihajlović, G.; Mosendz, O.; Wan, L.; Smith, N.; Choi, Y.; Wang, Y.; Katine, J. A.

2016-11-01

We introduce a differential planar Hall effect method that enables the experimental study of spin orbit torque switching of in-plane magnetized free layers in a simple Hall bar device geometry. Using this method, we study the Pt thickness dependence of switching currents and show that they decrease monotonically down to the minimum experimental thickness of ˜5 nm, while the critical current and power densities are very weakly thickness dependent, exhibiting the minimum values of Jc0 = 1.1 × 108 A/cm2 and ρJc0 2=0.6 ×1012 W/cm 3 at this minimum thickness. Our results suggest that a significant reduction of the critical parameters could be achieved by optimizing the free layer magnetics, which makes this technology a viable candidate for fast, high endurance and low-error rate applications such as cache memories.

David Adler Lectureship Award in the Field of Materials Physics: Racetrack Memory - a high-performance, storage class memory using magnetic domain-walls manipulated by current

NASA Astrophysics Data System (ADS)

Parkin, Stuart

2012-02-01

Racetrack Memory is a novel high-performance, non-volatile storage-class memory in which magnetic domains are used to store information in a ``magnetic racetrack'' [1]. The magnetic racetrack promises a solid state memory with storage capacities and cost rivaling that of magnetic disk drives but with much improved performance and reliability: a ``hard disk on a chip''. The magnetic racetrack is comprised of a magnetic nanowire in which a series of magnetic domain walls are shifted to and fro along the wire using nanosecond-long pulses of spin polarized current [2]. We have demonstrated the underlying physics that makes Racetrack Memory possible [3,4] and all the basic functions - creation, and manipulation of a train of domain walls and their detection. The physics underlying the current induced dynamics of domain walls will also be discussed. In particular, we show that the domain walls respond as if they have mass, leading to significant inertial driven motion of the domain walls over long times after the current pulses are switched off [3]. We also demonstrate that in perpendicularly magnetized nanowires there are two independent current driving mechanisms: one derived from bulk spin-dependent scattering that drives the domain walls in the direction of electron flow, and a second interfacial mechanism that can drive the domain walls either along or against the electron flow, depending on subtle changes in the nanowire structure. Finally, we demonstrate thermally induced spin currents are large enough that they can be used to manipulate domain walls. [4pt] [1] S.S.P. Parkin, US Patent 6,834,005 (2004); S.S.P. Parkin et al., Science 320, 190 (2008); S.S.P. Parkin, Scientific American (June 2009). [0pt] [2] M. Hayashi, L. Thomas, R. Moriya, C. Rettner and S.S.P. Parkin, Science 320, 209 (2008). [0pt] [3] L. Thomas, R. Moriya, C. Rettner and S.S.P. Parkin, Science 330, 1810 (2010). [0pt] [4] X. Jiang et al. Nat. Comm. 1:25 (2010) and Nano Lett. 11, 96 (2011).

Finite element model for MOI applications using A-V formulation

NASA Astrophysics Data System (ADS)

Xuan, L.; Shanker, B.; Udpa, L.; Shih, W.; Fitzpatrick, G.

2001-04-01

Magneto-optic imaging (MOI) is a relatively new sensor application of an extension of bubble memory technology to NDT and produce easy-to-interpret, real time analog images. MOI systems use a magneto-optic (MO) sensor to produce analog images of magnetic flux leakage from surface and subsurface defects. The instrument's capability in detecting the relatively weak magnetic fields associated with subsurface defects depends on the sensitivity of the magneto-optic sensor. The availability of a theoretical model that can simulate the MOI system performance is extremely important for optimization of the MOI sensor and hardware system. A nodal finite element model based on magnetic vector potential formulation has been developed for simulating MOI phenomenon. This model has been used for predicting the magnetic fields in simple test geometry with corrosion dome defects. In the case of test samples with multiple discontinuities, a more robust model using the magnetic vector potential Ā and electrical scalar potential V is required. In this paper, a finite element model based on A-V formulation is developed to model complex circumferential crack under aluminum rivets in dimpled countersink.

Achieving giant magnetically induced reorientation of martensitic variants in magnetic shape-memory Ni-Mn-Ga Films by microstructure engineering.

PubMed

Ranzieri, Paolo; Campanini, Marco; Fabbrici, Simone; Nasi, Lucia; Casoli, Francesca; Cabassi, Riccardo; Buffagni, Elisa; Grillo, Vincenzo; Magén, Cesar; Celegato, Federica; Barrera, Gabriele; Tiberto, Paola; Albertini, Franca

2015-08-26

Giant magnetically induced twin variant reorientation, comparable in intensity with bulk single crystals, is obtained in epitaxial magnetic shape-memory thin films. It is found to be tunable in intensity and spatial response by the fine control of microstructural patterns at the nanoscopic and microscopic scales. A thorough experimental study (including electron holography) allows a multiscale comprehension of the phenomenon. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Progress In Optical Memory Technology

NASA Astrophysics Data System (ADS)

Tsunoda, Yoshito

1987-01-01

More than 20 years have passed since the concept of optical memory was first proposed in 1966. Since then considerable progress has been made in this area together with the creation of completely new markets of optical memory in consumer and computer application areas. The first generation of optical memory was mainly developed with holographic recording technology in late 1960s and early 1970s. Considerable number of developments have been done in both analog and digital memory applications. Unfortunately, these technologies did not meet a chance to be a commercial product. The second generation of optical memory started at the beginning of 1970s with bit by bit recording technology. Read-only type optical memories such as video disks and compact audio disks have extensively investigated. Since laser diodes were first applied to optical video disk read out in 1976, there have been extensive developments of laser diode pick-ups for optical disk memory systems. The third generation of optical memory started in 1978 with bit by bit read/write technology using laser diodes. Developments of recording materials including both write-once and erasable have been actively pursued at several research institutes. These technologies are mainly focused on the optical memory systems for computer application. Such practical applications of optical memory technology has resulted in the creation of such new products as compact audio disks and computer file memories.

Influence of magnet eddy current on magnetization characteristics of variable flux memory machine

NASA Astrophysics Data System (ADS)

Yang, Hui; Lin, Heyun; Zhu, Z. Q.; Lyu, Shukang

2018-05-01

In this paper, the magnet eddy current characteristics of a newly developed variable flux memory machine (VFMM) is investigated. Firstly, the machine structure, non-linear hysteresis characteristics and eddy current modeling of low coercive force magnet are described, respectively. Besides, the PM eddy current behaviors when applying the demagnetizing current pulses are unveiled and investigated. The mismatch of the required demagnetization currents between the cases with or without considering the magnet eddy current is identified. In addition, the influences of the magnet eddy current on the demagnetization effect of VFMM are analyzed. Finally, a prototype is manufactured and tested to verify the theoretical analyses.

Soft magnetic memory of silk cocoon membrane

PubMed Central

Roy, Manas; Dubey, Amarish; Singh, Sushil Kumar; Bhargava, Kalpana; Sethy, Niroj Kumar; Philip, Deepu; Sarkar, Sabyasachi; Bajpai, Alok; Das, Mainak

2016-01-01

Silk cocoon membrane (SCM), a solid matrix of protein fiber, responds to light, heat and moisture and converts these energies to electrical signals. Essentially it exhibits photo-electric and thermo-electric properties; making it a natural electro-magnetic sensor, which may influence the pupal development. This raises the question: ‘is it only electricity?’, or ‘it also posses some kind of magnetic memory?’ This work attempted to explore the magnetic memory of SCM and confirm its soft magnetism. Fe, Co, Ni, Mn, Gd were found in SCM, in traces, through energy dispersive X-ray analysis (EDX), X-ray photoelectron spectroscopy (XPS) and inductively coupled plasma mass spectrometry (ICP-MS). Presence of iron was ascertained by electron paramagnetic resonance (EPR). In addition, EPR-spectra showed the presence of a stable pool of carbon-centric free radical in the cocoon structure. Carbon-centric free radicals behaves as a soft magnet inherently. Magnetic-Hysteresis (M-H) of SCM confirmed its soft magnetism. It can be concluded that the soft bio-magnetic feature of SCM is due to the entrapment of ferromagnetic elements in a stable pool of carbon centric radicals occurring on the super-coiled protein structure. Natural soft magnets like SCM provide us with models for developing eco-friendly, protein-based biological soft magnets. PMID:27374752

Soft magnetic memory of silk cocoon membrane

NASA Astrophysics Data System (ADS)

Roy, Manas; Dubey, Amarish; Singh, Sushil Kumar; Bhargava, Kalpana; Sethy, Niroj Kumar; Philip, Deepu; Sarkar, Sabyasachi; Bajpai, Alok; Das, Mainak

2016-07-01

Silk cocoon membrane (SCM), a solid matrix of protein fiber, responds to light, heat and moisture and converts these energies to electrical signals. Essentially it exhibits photo-electric and thermo-electric properties; making it a natural electro-magnetic sensor, which may influence the pupal development. This raises the question: ‘is it only electricity?’, or ‘it also posses some kind of magnetic memory?’ This work attempted to explore the magnetic memory of SCM and confirm its soft magnetism. Fe, Co, Ni, Mn, Gd were found in SCM, in traces, through energy dispersive X-ray analysis (EDX), X-ray photoelectron spectroscopy (XPS) and inductively coupled plasma mass spectrometry (ICP-MS). Presence of iron was ascertained by electron paramagnetic resonance (EPR). In addition, EPR-spectra showed the presence of a stable pool of carbon-centric free radical in the cocoon structure. Carbon-centric free radicals behaves as a soft magnet inherently. Magnetic-Hysteresis (M-H) of SCM confirmed its soft magnetism. It can be concluded that the soft bio-magnetic feature of SCM is due to the entrapment of ferromagnetic elements in a stable pool of carbon centric radicals occurring on the super-coiled protein structure. Natural soft magnets like SCM provide us with models for developing eco-friendly, protein-based biological soft magnets.

Soft magnetic memory of silk cocoon membrane.

PubMed

Roy, Manas; Dubey, Amarish; Singh, Sushil Kumar; Bhargava, Kalpana; Sethy, Niroj Kumar; Philip, Deepu; Sarkar, Sabyasachi; Bajpai, Alok; Das, Mainak

2016-07-04

Silk cocoon membrane (SCM), a solid matrix of protein fiber, responds to light, heat and moisture and converts these energies to electrical signals. Essentially it exhibits photo-electric and thermo-electric properties; making it a natural electro-magnetic sensor, which may influence the pupal development. This raises the question: 'is it only electricity?', or 'it also posses some kind of magnetic memory?' This work attempted to explore the magnetic memory of SCM and confirm its soft magnetism. Fe, Co, Ni, Mn, Gd were found in SCM, in traces, through energy dispersive X-ray analysis (EDX), X-ray photoelectron spectroscopy (XPS) and inductively coupled plasma mass spectrometry (ICP-MS). Presence of iron was ascertained by electron paramagnetic resonance (EPR). In addition, EPR-spectra showed the presence of a stable pool of carbon-centric free radical in the cocoon structure. Carbon-centric free radicals behaves as a soft magnet inherently. Magnetic-Hysteresis (M-H) of SCM confirmed its soft magnetism. It can be concluded that the soft bio-magnetic feature of SCM is due to the entrapment of ferromagnetic elements in a stable pool of carbon centric radicals occurring on the super-coiled protein structure. Natural soft magnets like SCM provide us with models for developing eco-friendly, protein-based biological soft magnets.

Preface to ISIF 2009 special issue of Journal of Applied Physics : science and technology of integrated functionalities.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Auciello, O.; Dey, S.; Paz de Araujo, C.

2011-05-01

The science and technology of ferroelectric thin films and their applications have attracted many researchers and experienced tremendous progress in the past 20 years. The recent worldwide increase in commercial applications of ferroelectric devices such as smart cards based on nonvolatile ferroelectric random access memories is a symbol of both the maturity and the acceptance of the technology. The 21st International Symposium on Integrated Ferroelectrics (ISIF 2009), held on September 22 to October 2, 2009 in Colorado Springs, CO, provided a forum for the academic and national laboratories research community and industry to present and share their new findings, achievements,more » and opinions on integrated ferroelectrics and their applications. The International Symposium on Integrated Ferroelectrics hosted the ISIF 2009. This was the first year where the ISIF held the conference in its new format under the name of International Symposium on Integrated Functionalities. The General Chairs of the ISIF in consultation with the Advisory Board and the ISIF community decided to revise the focus of the conference in order to broaden the scope to the science and technology of multifunctional materials and devices. This decision was taken in view that a new paradigm in materials, materials integration, and devices is emerging with a view to the development of a new generation of micro- and nanoscale multifunctional devices. The program included three plenary presentations on diverse topics such as 'The Role of Nonvolatile Memory in Ubiquitous Computing,' 'Ferroelectrics and High Density Memory Technology,' 'Nanoscale Ferroelectrics and Interfaces: Size Effects,' four tutorial lectures on diverse topics, such as 'Magnetic Memory Applications,' 'Ferroelectrics and Ferroelectric Devices,' 'Challenges for High-K Dielectrics on High Mobility Channels,' 'Solar Cell Materials,' one poster session, and eight oral sessions. Thanks to the great efforts made by the ISIF organization committee and the session chairs, the conference successfully achieved its objectives and the work presented reflected very well the most recent advances of integrated ferroelectrics and their applications, as well as advances in other areas related to the new theme of Integrated Functionalities. Many aspects of ferroelectric, piezoelectric, high-K dielectric, magnetic, and phase change materials, including the science and technology of these materials in thin film form, integration with other thin film materials (metals or oxide electrodes), and fabrication of micro- and nanostructures based on these heterostructure layers, and device architecture and physics, were addressed from the experimental point of view. Work on theory and computer simulations of the mentioned materials and devices were discussed also with a view to the promising applications to multifunctional devices. In addition, the ISIF 2009 featured discussions of alternative nonvolatile memory concepts and materials, such as phase change memories, research on multiferroics and magnetoelectric materials, ferroelectric photovoltaics, and new directions on the science of perovskites such as biomolecular/polarizable interfaces, and bio-ferroelectric and other oxide interfaces. Following the standard submission and peer review process of Journal of Applied Physics, the selected papers presented in ISIF 2009 in Colorado Springs are published in this special issue. We believe that the papers in this special issue represent the forefront contributions to ISIF 2009 in the various areas of fundamental and applied science of integrated ferroelectrics and functionalities and their applications. We would like to take this opportunity to thank the following organizations and companies for their support and sponsorship for ISIF 2009, namely: Aixact Systems GMBH, Radiant Technologies, Symetrix Corporation, and Taylor and Francis Publishers. We would also like to thank the conference and session chairs, advisory and organizing committee members for their hard work that resulted in a very successful ISIF 2009, now in its new future-looking modality of Integrated Functionalities.« less

Magnetic Properties and Phase Diagram of Ni50Mn_{50-x}Ga_{x/2}In_{x/2} Magnetic Shape Memory Alloys

NASA Astrophysics Data System (ADS)

Xu, Xiao; Yoshida, Yasuki; Omori, Toshihiro; Kanomata, Takeshi; Kainuma, Ryosuke

2016-12-01

Ni50Mn50- x Ga x/2In x/2 magnetic shape memory alloys were systematically prepared, and the magnetic properties as well as the phase diagram, including atomic ordering, martensitic and magnetic transitions, were investigated. The B2- L21 order-disorder transformation showed a parabolic-like curve against the Ga+In composition. The martensitic transformation temperature was found to decrease with increasing Ga+In composition and to slightly bend downwards below the Curie temperature of the parent phase. Spontaneous magnetization was investigated for both parent and martensite alloys. The magnetism of martensite phase was found to show glassy magnetic behaviors by thermomagnetization and AC susceptibility measurements.

An FPGA-Based Test-Bed for Reliability and Endurance Characterization of Non-Volatile Memory

NASA Technical Reports Server (NTRS)

Rao, Vikram; Patel, Jagdish; Patel, Janak; Namkung, Jeffrey

2001-01-01

Memory technologies are divided into two categories. The first category, nonvolatile memories, are traditionally used in read-only or read-mostly applications because of limited write endurance and slow write speed. These memories are derivatives of read only memory (ROM) technology, which includes erasable programmable ROM (EPROM), electrically-erasable programmable ROM (EEPROM), Flash, and more recent ferroelectric non-volatile memory technology. Nonvolatile memories are able to retain data in the absence of power. The second category, volatile memories, are random access memory (RAM) devices including SRAM and DRAM. Writing to these memories is fast and write endurance is unlimited, so they are most often used to store data that change frequently, but they cannot store data in the absence of power. Nonvolatile memory technologies with better future potential are FRAM, Chalcogenide, GMRAM, Tunneling MRAM, and Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) EEPROM.

Designing shape-memory Heusler alloys from first-principles

NASA Astrophysics Data System (ADS)

Siewert, M.; Gruner, M. E.; Dannenberg, A.; Chakrabarti, A.; Herper, H. C.; Wuttig, M.; Barman, S. R.; Singh, S.; Al-Zubi, A.; Hickel, T.; Neugebauer, J.; Gillessen, M.; Dronskowski, R.; Entel, P.

2011-11-01

The phase diagrams of magnetic shape-memory Heusler alloys, in particular, ternary Ni-Mn-Z and quarternary (Pt, Ni)-Mn-Z alloys with Z = Ga, Sn, have been addressed by density functional theory and Monte Carlo simulations. Finite temperature free energy calculations show that the phonon contribution stabilizes the high-temperature austenite structure while at low temperatures magnetism and the band Jahn-Teller effect favor the modulated monoclinic 14M or the nonmodulated tetragonal structure. The substitution of Ni by Pt leads to a series of magnetic shape-memory alloys with very similar properties to Ni-Mn-Ga but with a maximal eigenstrain of 14%.

Vortical structures for nanomagnetic memory induced by dipole-dipole interaction in monolayer disks

NASA Astrophysics Data System (ADS)

Liu, Zhaosen; Ciftja, Orion; Zhang, Xichao; Zhou, Yan; Ian, Hou

2018-05-01

It is well known that magnetic domains in nanodisks can be used as storage units for computer memory. Using two quantum simulation approaches, we show here that spin vortices on magnetic monolayer nanodisks, which are chirality-free, can be induced by dipole-dipole interaction (DDI) on the disk-plane. When DDI is sufficiently strong, vortical and anti-vortical multi-domain textures can be generated simultaneously. Especially, a spin vortex can be easily created and deleted through either external magnetic or electrical signals, making them ideal to be used in nanomagnetic memory and logical devices. We demonstrate these properties in our simulations.

The 2017 Magnetism Roadmap

NASA Astrophysics Data System (ADS)

Sander, D.; Valenzuela, S. O.; Makarov, D.; Marrows, C. H.; Fullerton, E. E.; Fischer, P.; McCord, J.; Vavassori, P.; Mangin, S.; Pirro, P.; Hillebrands, B.; Kent, A. D.; Jungwirth, T.; Gutfleisch, O.; Kim, C. G.; Berger, A.

2017-09-01

Building upon the success and relevance of the 2014 Magnetism Roadmap, this 2017 Magnetism Roadmap edition follows a similar general layout, even if its focus is naturally shifted, and a different group of experts and, thus, viewpoints are being collected and presented. More importantly, key developments have changed the research landscape in very relevant ways, so that a novel view onto some of the most crucial developments is warranted, and thus, this 2017 Magnetism Roadmap article is a timely endeavour. The change in landscape is hereby not exclusively scientific, but also reflects the magnetism related industrial application portfolio. Specifically, Hard Disk Drive technology, which still dominates digital storage and will continue to do so for many years, if not decades, has now limited its footprint in the scientific and research community, whereas significantly growing interest in magnetism and magnetic materials in relation to energy applications is noticeable, and other technological fields are emerging as well. Also, more and more work is occurring in which complex topologies of magnetically ordered states are being explored, hereby aiming at a technological utilization of the very theoretical concepts that were recognised by the 2016 Nobel Prize in Physics. Given this somewhat shifted scenario, it seemed appropriate to select topics for this Roadmap article that represent the three core pillars of magnetism, namely magnetic materials, magnetic phenomena and associated characterization techniques, as well as applications of magnetism. While many of the contributions in this Roadmap have clearly overlapping relevance in all three fields, their relative focus is mostly associated to one of the three pillars. In this way, the interconnecting roles of having suitable magnetic materials, understanding (and being able to characterize) the underlying physics of their behaviour and utilizing them for applications and devices is well illustrated, thus giving an accurate snapshot of the world of magnetism in 2017. The article consists of 14 sections, each written by an expert in the field and addressing a specific subject on two pages. Evidently, the depth at which each contribution can describe the subject matter is limited and a full review of their statuses, advances, challenges and perspectives cannot be fully accomplished. Also, magnetism, as a vibrant research field, is too diverse, so that a number of areas will not be adequately represented here, leaving space for further Roadmap editions in the future. However, this 2017 Magnetism Roadmap article can provide a frame that will enable the reader to judge where each subject and magnetism research field stands overall today and which directions it might take in the foreseeable future. The first material focused pillar of the 2017 Magnetism Roadmap contains five articles, which address the questions of atomic scale confinement, 2D, curved and topological magnetic materials, as well as materials exhibiting unconventional magnetic phase transitions. The second pillar also has five contributions, which are devoted to advances in magnetic characterization, magneto-optics and magneto-plasmonics, ultrafast magnetization dynamics and magnonic transport. The final and application focused pillar has four contributions, which present non-volatile memory technology, antiferromagnetic spintronics, as well as magnet technology for energy and bio-related applications. As a whole, the 2017 Magnetism Roadmap article, just as with its 2014 predecessor, is intended to act as a reference point and guideline for emerging research directions in modern magnetism.

Investigations on the electronic, structural, magnetic properties related to shape-memory behavior in Ti{sub 2}CoX (X=Al, Ga, In)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wei, Xiao-Ping, E-mail: weixp2008@gmail.com; Chu, Yan-Dong; Sun, Xiao-Wei

2015-02-15

Highlights: • The analysis of phase stability trend is studied for Ti{sub 2}CoX(X = Al, Ga, In). • Ti{sub 2}CoGa is more suitable as shape memory alloy. • Total magnetic moments disappear with a increase of c/a ratio for all systems. • Density of states at the Fermi level are also shown. - Abstract: Using the full-potential local orbital minimum-basis method, we have performed a systematic investigations on the electronic, structural, and magnetic properties related to shape memory applications for Ti{sub 2}CoX (X=Al, Ga, In) alloys. Our results confirm that these alloys are half-metallic ferromagnets with total magnetic moment ofmore » 2μ{sub B} per formula unit in austenite phase, and undergo a martensitic transformation at low temperatures. The relative stabilities of the martensitic phases differ considerably between Ti{sub 2}CoX (X=Al, Ga, In). Details of the electronic structures suggest that the differences in hybridizations between the magnetic components are responsible for trends of phase. Quantitative estimates for the energetics and the magnetizations indicate that Ti{sub 2}CoGa is a promising candidate for shape memory applications.« less

Magnetization dynamics of single-domain nanodots and minimum energy dissipation during either irreversible or reversible switching

NASA Astrophysics Data System (ADS)

Madami, Marco; Gubbiotti, Gianluca; Tacchi, Silvia; Carlotti, Giovanni

2017-11-01

Single- or multi-layered planar magnetic dots, with lateral dimensions ranging from tens to hundreds of nanometers, are used as elemental switches in current and forthcoming devices for information and communication technology (ICT), including magnetic memories, spin-torque oscillators and nano-magnetic logic gates. In this review article, we will first discuss energy dissipation during irreversible switching protocols of dots of different dimensions, ranging from a few tens of nanometers to the micrometric range. Then we will focus on the fundamental energy limits of adiabatic (slow) erasure and reversal of a magnetic nanodot, showing that dissipationless operation is achievable, provided that both dynamic reversibility (arbitrarily slow application of external fields) and entropic reversibility (no free entropy increase) are insured. However, recent theoretical and experimental tests of magnetic-dot erasure reveal that intrinsic defects related to materials imperfections such as roughness or polycrystallinity, may cause an excess of dissipation if compared to the minimum theoretical limit. We will conclude providing an outlook on the most promising strategies to achieve a new generation of power-saving nanomagnetic logic devices based on clusters of interacting dots and on straintronics.

Coupled Kinetic-MHD Simulations of Divertor Heat Load with ELM Perturbations

NASA Astrophysics Data System (ADS)

Cummings, Julian; Chang, C. S.; Park, Gunyoung; Sugiyama, Linda; Pankin, Alexei; Klasky, Scott; Podhorszki, Norbert; Docan, Ciprian; Parashar, Manish

2010-11-01

The effect of Type-I ELM activity on divertor plate heat load is a key component of the DOE OFES Joint Research Target milestones for this year. In this talk, we present simulations of kinetic edge physics, ELM activity, and the associated divertor heat loads in which we couple the discrete guiding-center neoclassical transport code XGC0 with the nonlinear extended MHD code M3D using the End-to-end Framework for Fusion Integrated Simulations, or EFFIS. In these coupled simulations, the kinetic code and the MHD code run concurrently on the same massively parallel platform and periodic data exchanges are performed using a memory-to-memory coupling technology provided by EFFIS. The M3D code models the fast ELM event and sends frequent updates of the magnetic field perturbations and electrostatic potential to XGC0, which in turn tracks particle dynamics under the influence of these perturbations and collects divertor particle and energy flux statistics. We describe here how EFFIS technologies facilitate these coupled simulations and discuss results for DIII-D, NSTX and Alcator C-Mod tokamak discharges.

Development of an engineering model for ferromagnetic shape memory alloys

NASA Astrophysics Data System (ADS)

Tani, Yoshiaki; Todaka, Takashi; Enokizono, Masato

This paper presents a relationship among stress, temperature and magnetic properties of a ferromagnetic shape memory alloy. In order to derive an engineering model of ferromagnetic shape memory alloys, we have developed a measuring system of the relationship among stress, temperature and magnetic properties. The samples used in this measurement are Fe68-Ni10-Cr9-Mn7-Si6 wt% ferromagnetic shape memory alloy. They are thin ribbons made by rapid cooling in air. In the measurement, the ribbon sample is inserted into a sample holder winding consisting of the B-coil and compensation coils, and magnetized in an open solenoid coil. The ribbon is stressed with attachment weights and heated with a heating wire. The specific susceptibility was increased by applying tension, and slightly increased by heating below the Curie temperature.

A functional magnetic resonance imaging investigation of short-term source and item memory for negative pictures.

PubMed

Mitchell, Karen J; Mather, Mara; Johnson, Marcia K; Raye, Carol L; Greene, Erich J

2006-10-02

We investigated the hypothesis that arousal recruits attention to item information, thereby disrupting working memory processes that help bind items to context. Using functional magnetic resonance imaging, we compared brain activity when participants remembered negative or neutral picture-location conjunctions (source memory) versus pictures only. Behaviorally, negative trials showed disruption of short-term source, but not picture, memory; long-term picture recognition memory was better for negative than for neutral pictures. Activity in areas involved in working memory and feature integration (precentral gyrus and its intersect with superior temporal gyrus) was attenuated on negative compared with neutral source trials relative to picture-only trials. Visual processing areas (middle occipital and lingual gyri) showed greater activity for negative than for neutral trials, especially on picture-only trials.

Method for making field-structured memory materials

DOEpatents

Martin, James E.; Anderson, Robert A.; Tigges, Chris P.

2002-01-01

A method of forming a dual-level memory material using field structured materials. The field structured materials are formed from a dispersion of ferromagnetic particles in a polymerizable liquid medium, such as a urethane acrylate-based photopolymer, which are applied as a film to a support and then exposed in selected portions of the film to an applied magnetic or electric field. The field can be applied either uniaxially or biaxially at field strengths up to 150 G or higher to form the field structured materials. After polymerizing the field-structure materials, a magnetic field can be applied to selected portions of the polymerized field-structured material to yield a dual-level memory material on the support, wherein the dual-level memory material supports read-and-write binary data memory and write once, read many memory.

Lateralized Spatial and Object Memory Encoding in Entorhinal and Perirhinal Cortices

ERIC Educational Resources Information Center

Bellgowan, Patrick S. F.; Buffalo, Elizabeth A.; Bodurka, Jerzy; Martin, Alex

2009-01-01

The perirhinal and entorhinal cortices are critical components of the medial temporal lobe (MTL) declarative memory system. Study of their specific functions using blood oxygenation level-dependent (BOLD) functional magnetic resonance imaging (fMRI), however, has suffered from severe magnetic susceptibility signal dropout resulting in poor…

Gradient Echo Quantum Memory in Warm Atomic Vapor

PubMed Central

Pinel, Olivier; Hosseini, Mahdi; Sparkes, Ben M.; Everett, Jesse L.; Higginbottom, Daniel; Campbell, Geoff T.; Lam, Ping Koy; Buchler, Ben C.

2013-01-01

Gradient echo memory (GEM) is a protocol for storing optical quantum states of light in atomic ensembles. The primary motivation for such a technology is that quantum key distribution (QKD), which uses Heisenberg uncertainty to guarantee security of cryptographic keys, is limited in transmission distance. The development of a quantum repeater is a possible path to extend QKD range, but a repeater will need a quantum memory. In our experiments we use a gas of rubidium 87 vapor that is contained in a warm gas cell. This makes the scheme particularly simple. It is also a highly versatile scheme that enables in-memory refinement of the stored state, such as frequency shifting and bandwidth manipulation. The basis of the GEM protocol is to absorb the light into an ensemble of atoms that has been prepared in a magnetic field gradient. The reversal of this gradient leads to rephasing of the atomic polarization and thus recall of the stored optical state. We will outline how we prepare the atoms and this gradient and also describe some of the pitfalls that need to be avoided, in particular four-wave mixing, which can give rise to optical gain. PMID:24300586

Gradient echo quantum memory in warm atomic vapor.

PubMed

Pinel, Olivier; Hosseini, Mahdi; Sparkes, Ben M; Everett, Jesse L; Higginbottom, Daniel; Campbell, Geoff T; Lam, Ping Koy; Buchler, Ben C

2013-11-11

Gradient echo memory (GEM) is a protocol for storing optical quantum states of light in atomic ensembles. The primary motivation for such a technology is that quantum key distribution (QKD), which uses Heisenberg uncertainty to guarantee security of cryptographic keys, is limited in transmission distance. The development of a quantum repeater is a possible path to extend QKD range, but a repeater will need a quantum memory. In our experiments we use a gas of rubidium 87 vapor that is contained in a warm gas cell. This makes the scheme particularly simple. It is also a highly versatile scheme that enables in-memory refinement of the stored state, such as frequency shifting and bandwidth manipulation. The basis of the GEM protocol is to absorb the light into an ensemble of atoms that has been prepared in a magnetic field gradient. The reversal of this gradient leads to rephasing of the atomic polarization and thus recall of the stored optical state. We will outline how we prepare the atoms and this gradient and also describe some of the pitfalls that need to be avoided, in particular four-wave mixing, which can give rise to optical gain.

Rewriting magnetic phase change memory by laser heating

NASA Astrophysics Data System (ADS)

Timmerwilke, John; Liou, Sy-Hwang; Cheng, Shu Fan; Edelstein, Alan S.

2016-04-01

Magnetic phase change memory (MAG PCM) consists of bits with different magnetic permeability values. The bits are read by measuring their effect on a magnetic probe field. Previously low permeability crystalline bits had been written in high permeability amorphous films of Metglas via laser heating. Here data is presented showing that by applying short laser pulses with the appropriate power to previously crystallized regions they can first be vitrified and then again crystallized. Thus, MAG PCM is rewriteable. Technical issues in processing the bits are discussed and results on thermal modeling are presented.

Direct observation of magnetic domains by Kerr microscopy in a Ni-Mn-Ga magnetic shape-memory alloy

NASA Astrophysics Data System (ADS)

Perevertov, O.; Heczko, O.; Schäfer, R.

2017-04-01

The magnetic domains in a magnetic shape-memory Ni-Mn-Ga alloy were observed by magneto-optical Kerr microscopy using monochromatic blue LED light. The domains were observed for both single- and multivariant ferroelastic states of modulated martensite. The multivariant state with very fine twins was spontaneously formed after transformation from high-temperature austenite. For both cases, bar domains separated by 180∘ domain walls were found and their dynamics was studied. A quasidomain model was applied to explain the domains in the multivariant state.

Magnetic field dependence of spin torque switching in nanoscale magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Yang, Liu; Rowlands, Graham; Katine, Jordan; Langer, Juergen; Krivorotov, Ilya

2012-02-01

Magnetic random access memory based on spin transfer torque effect in nanoscale magnetic tunnel junctions (STT-RAM) is emerging as a promising candidate for embedded and stand-alone computer memory. An important performance parameter of STT-RAM is stability of its free magnetic layer against thermal fluctuations. Measurements of the free layer switching probability as a function of sub-critical voltage at zero effective magnetic field (read disturb rate or RDR measurements) have been proposed as a method for quantitative evaluation of the free layer thermal stability at zero voltage. In this presentation, we report RDR measurement as a function of external magnetic field, which provide a test of the RDR method self-consistency and reliability.

SONOS technology for commercial and military nonvolatile memory applications

NASA Astrophysics Data System (ADS)

Adams, D.; Farrell, P.; Jacunski, M.; Williams, D.; Jakubczak, J.; Knoll, M.; Murray, J.

Silicon Oxide Nitride Oxide Semiconductor (SONOS) technology is well suited for military and commercial nonvolatile memory applications. Excellent long term memory retention, radiation hardness, and endurance has been demonstrated with this technology. This paper summarizes our data in these areas for SONOS technology.

Manipulating femtosecond spin-orbit torques with laser pulse sequences to control magnetic memory states and ringing

NASA Astrophysics Data System (ADS)

Lingos, P. C.; Wang, J.; Perakis, I. E.

2015-05-01

Femtosecond (fs) coherent control of collective order parameters is important for nonequilibrium phase dynamics in correlated materials. Here, we propose such control of ferromagnetic order based on using nonadiabatic optical manipulation of electron-hole (e -h ) photoexcitations to create fs carrier-spin pulses with controllable direction and time profile. These spin pulses are generated due to the time-reversal symmetry breaking arising from nonperturbative spin-orbit and magnetic exchange couplings of coherent photocarriers. By tuning the nonthermal populations of exchange-split, spin-orbit-coupled semiconductor band states, we can excite fs spin-orbit torques that control complex magnetization pathways between multiple magnetic memory states. We calculate the laser-induced fs magnetic anisotropy in the time domain by using density matrix equations of motion rather than the quasiequilibrium free energy. By comparing to pump-probe experiments, we identify a "sudden" out-of-plane magnetization canting displaying fs magnetic hysteresis, which agrees with switchings measured by the static Hall magnetoresistivity. This fs transverse spin-canting switches direction with magnetic state and laser frequency, which distinguishes it from the longitudinal nonlinear optical and demagnetization effects. We propose that sequences of clockwise or counterclockwise fs spin-orbit torques, photoexcited by shaping two-color laser-pulse sequences analogous to multidimensional nuclear magnetic resonance (NMR) spectroscopy, can be used to timely suppress or enhance magnetic ringing and switching rotation in magnetic memories.

Current induced perpendicular-magnetic-anisotropy racetrack memory with magnetic field assistance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Y.; Klein, J.-O.; Chappert, C.

2014-01-20

High current density is indispensable to shift domain walls (DWs) in magnetic nanowires, which limits the using of racetrack memory (RM) for low power and high density purposes. In this paper, we present perpendicular-magnetic-anisotropy (PMA) Co/Ni RM with global magnetic field assistance, which lowers the current density for DW motion. By using a compact model of PMA RM and 40 nm design kit, we perform mixed simulation to validate the functionality of this structure and analyze its density potential. Stochastic DW motion behavior has been taken into account and statistical Monte-Carlo simulations are carried out to evaluate its reliability performance.

Skyrmion-based multi-channel racetrack

NASA Astrophysics Data System (ADS)

Song, Chengkun; Jin, Chendong; Wang, Jinshuai; Xia, Haiyan; Wang, Jianbo; Liu, Qingfang

2017-11-01

Magnetic skyrmions are promising for the application of racetrack memories, logic gates, and other nano-devices, owing to their topologically protected stability, small size, and low driving current. In this work, we propose a skyrmion-based multi-channel racetrack memory where the skyrmion moves in the selected channel by applying voltage-controlled magnetic anisotropy gates. It is demonstrated numerically that a current-dependent skyrmion Hall effect can be restrained by the additional potential of the voltage-controlled region, and the skyrmion velocity and moving channel in the racetrack can be operated by tuning the voltage-controlled magnetic anisotropy, gate position, and current density. Our results offer a potential application of racetrack memory based on skyrmions.

Manipulation of Magnetic Textures in Thin Films and Devices

NASA Astrophysics Data System (ADS)

Tolley, Robert Douglas

Control and manipulation of magnetic textures is promising for the development of next-generation data storage, memory and processing technologies. Towards this goal, domain wall manipulation in two materials systems are presented here and thoroughly evaluated. Domain walls in ferrimagnetic Cobalt-Terbium alloys and multilayers are created, moved and stabilized via thermal gradients and a static magnetic field and exploit the unique properties of the system across the magnetic compensation point. The response of the systems to thermal gradients is observed via Kerr microscopy and used to determine the positioning of domain walls within patterned devices. Magnetic skyrmions are discovered in thin-film multilayered stacks using an Pt/Co/Os/Pt heterostructures where the thin Osmium layer is used to break interfacial symmetry and enhance the Dzyaloshinskii-Moriya interaction. The resulting skyrmions are manipulated using temperature, magnetic field, and electric current, and special attention is paid to their motion and nucleation behavior. Skyrmions are observed to be formed by low applied currents from nucleation sites and by collapse of stripe textures. Patterned wires allow for the observation of skyrmion nucleation behavior in free space, as well as defect sites, and real-time Kerr microscopy imaging is presented of skyrmion and stripe dynamics. These systems are evaluated from a perspective of their growth, patterning, measurement, and the novel behavior of the magnetic textures.

Increased operational temperature of Cr2O3-based spintronic devices

NASA Astrophysics Data System (ADS)

Street, Michael; Echtenkamp, Will; Komesu, Takashi; Cao, Shi; Wang, Jian; Dowben, Peter; Binek, Christian

Spintronic devices have been considered a promising path to revolutionizing the current data storage and memory technologies. This work is an effort to utilize voltage-controlled boundary magnetization of the magnetoelectric chromia (Cr2O3) to be implemented into a spintronic device. The electric switchable boundary magnetization of chromia can be used to voltage-control the magnetic states of an adjacent ferromagnetic layer. For this technique to be utilized in a spintronic device, the antiferromagnetic ordering temperature of chromia must be enhanced above the bulk value of TN = 307K. Previously, based on first principle calculations, boron doped chromia thin films were fabricated via pulsed laser deposition showing boundary magnetization at elevated temperatures. Measurements of the boundary magnetization were also corroborated by spin polarized inverse photoemission spectroscopy. Exchange bias of B-doped chromia was also investigated using magneto-optical Kerr effect, showing an increased blocking temperature from 307K. Further boundary magnetization measurements and spin polarized inverse photoemission measurements indicate the surface magnetization to an in-plane orientation from the standard perpendicular orientation. This project was supported by the SRC through CNFD, an SRC-NRI Center under Task ID (2398.001) and by C-SPIN, part of STARnet, sponsored by MARCO and DARPA (No. SRC 2381.001).

Short-Term Plasticity and Long-Term Potentiation in Magnetic Tunnel Junctions: Towards Volatile Synapses

NASA Astrophysics Data System (ADS)

Sengupta, Abhronil; Roy, Kaushik

2016-02-01

Synaptic memory is considered to be the main element responsible for learning and cognition in humans. Although traditionally nonvolatile long-term plasticity changes are implemented in nanoelectronic synapses for neuromorphic applications, recent studies in neuroscience reveal that biological synapses undergo metastable volatile strengthening followed by a long-term strengthening provided that the frequency of the input stimulus is sufficiently high. Such "memory strengthening" and "memory decay" functionalities can potentially lead to adaptive neuromorphic architectures. In this paper, we demonstrate the close resemblance of the magnetization dynamics of a magnetic tunnel junction (MTJ) to short-term plasticity and long-term potentiation observed in biological synapses. We illustrate that, in addition to the magnitude and duration of the input stimulus, the frequency of the stimulus plays a critical role in determining long-term potentiation of the MTJ. Such MTJ synaptic memory arrays can be utilized to create compact, ultrafast, and low-power intelligent neural systems.

DIODE STEERED MANGETIC-CORE MEMORY

DOEpatents

Melmed, A.S.; Shevlin, R.T.; Laupheimer, R.

1962-09-18

A word-arranged magnetic-core memory is designed for use in a digital computer utilizing the reverse or back current property of the semi-conductor diodes to restore the information in the memory after read-out. In order to ob tain a read-out signal from a magnetic core storage unit, it is necessary to change the states of some of the magnetic cores. In order to retain the information in the memory after read-out it is then necessary to provide a means to return the switched cores to their states before read-out. A rewrite driver passes a pulse back through each row of cores in which some switching has taken place. This pulse combines with the reverse current pulses of diodes for each column in which a core is switched during read-out to cause the particular cores to be switched back into their states prior to read-out. (AEC)

Crack propagation analysis and fatigue life prediction for structural alloy steel based on metal magnetic memory testing

NASA Astrophysics Data System (ADS)

Ni, Chen; Hua, Lin; Wang, Xiaokai

2018-09-01

To monitor the crack propagation and predict the fatigue life of ferromagnetic material, the metal magnetic memory (MMM) testing was carried out to the single edge notched specimen made from structural alloy steel under three-point bending fatigue experiment in this paper. The variation of magnetic memory signal Hp (y) in process of fatigue crack propagation was investigated. The gradient K of Hp (y) was investigated and compared with the stress of specimen obtained by finite element analysis. It indicated that the gradient K can qualitatively reflect the distribution and variation of stress. The maximum gradient Kmax and crack size showed a good linear relationship, which indicated that the crack propagation can be estimated by MMM testing. Furthermore, the damage model represented by magnetic memory characteristic was created and a fatigue life prediction method was developed. The fatigue life can be evaluated by the relationship between damage parameter and normalized life. The method was also verified by another specimen. Because of MMM testing, it provided a new approach for predicting fatigue life.

Memory and Spin Injection Devices Involving Half Metals

DOE PAGES

Shaughnessy, M.; Snow, Ryan; Damewood, L.; ...

2011-01-01

We suggest memory and spin injection devices fabricated with half-metallic materials and based on the anomalous Hall effect. Schematic diagrams of the memory chips, in thin film and bulk crystal form, are presented. Spin injection devices made in thin film form are also suggested. These devices do not need any external magnetic field but make use of their own magnetization. Only a gate voltage is needed. The carriers are 100% spin polarized. Memory devices may potentially be smaller, faster, and less volatile than existing ones, and the injection devices may be much smaller and more efficient than existing spin injectionmore » devices.« less

Shape Memory Polyurethane Materials Containing Ferromagnetic Iron Oxide and Graphene Nanoplatelets

PubMed Central

Urban, Magdalena

2017-01-01

Intelligent materials, such as memory shape polymers, have attracted considerable attention due to wide range of possible applications. Currently, intensive research is underway, in matters of obtaining memory shape materials that can be actuated via inductive methods, for example with help of magnetic field. In this work, an attempt was made to develop a new polymer composite—polyurethane modified with graphene nanoplates and ferromagnetic iron oxides—with improved mechanical properties and introduced magnetic and memory shape properties. Based on the conducted literature review, gathered data were compared to the results of similar materials. Obtained materials were tested for their thermal, rheological, mechanical and shape memory properties. Structure of both fillers and composites were also analyzed using various spectroscopic methods. The addition of fillers to the polyurethane matrix improved the mechanical and shape memory properties, without having a noticeable impact on thermal properties. As it was expected, the high content of fillers caused a significant change in viscosity of filled prepolymers (during the synthesis stage). Each of the studied composites showed better mechanical properties than the unmodified polyurethanes. The addition of magnetic particles introduced additional properties to the composite, which could significantly expand the functionality of the materials developed in this work. PMID:28906445

Shape Memory Polyurethane Materials Containing Ferromagnetic Iron Oxide and Graphene Nanoplatelets.

PubMed

Urban, Magdalena; Strankowski, Michał

2017-09-14

Intelligent materials, such as memory shape polymers, have attracted considerable attention due to wide range of possible applications. Currently, intensive research is underway, in matters of obtaining memory shape materials that can be actuated via inductive methods, for example with help of magnetic field. In this work, an attempt was made to develop a new polymer composite-polyurethane modified with graphene nanoplates and ferromagnetic iron oxides-with improved mechanical properties and introduced magnetic and memory shape properties. Based on the conducted literature review, gathered data were compared to the results of similar materials. Obtained materials were tested for their thermal, rheological, mechanical and shape memory properties. Structure of both fillers and composites were also analyzed using various spectroscopic methods. The addition of fillers to the polyurethane matrix improved the mechanical and shape memory properties, without having a noticeable impact on thermal properties. As it was expected, the high content of fillers caused a significant change in viscosity of filled prepolymers (during the synthesis stage). Each of the studied composites showed better mechanical properties than the unmodified polyurethanes. The addition of magnetic particles introduced additional properties to the composite, which could significantly expand the functionality of the materials developed in this work.

Enhancing current-induced torques by abutting additional spin polarizer layer to nonmagnetic metal layer

NASA Astrophysics Data System (ADS)

Go, Gyungchoon; Lee, Kyung-Jin; Kim, Young Keun

2017-04-01

Recently, the switching of a perpendicularly magnetized ferromagnet (FM) by injecting an in-plane current into an attached non-magnet (NM) has become of emerging technological interest. This magnetization switching is attributed to the spin-orbit torque (SOT) originating from the strong spin-orbit coupling of the NM layer. However, the switching efficiency of the NM/FM structure itself may be insufficient for practical use, as for example, in spin transfer torque (STT)-based magnetic random access memory (MRAM) devices. Here we investigate spin torque in an NM/FM structure with an additional spin polarizer (SP) layer abutted to the NM layer. In addition to the SOT contribution, a spin-polarized current from the SP layer creates an extra spin chemical potential difference at the NM/FM interface and gives rise to a STT on the FM layer. We show that, using typical parameters including device width, thickness, spin diffusion length, and the spin Hall angle, the spin torque from the SP layer can be much larger than that from the spin Hall effect (SHE) of the NM.

Extended investigation of intermartensitic transitions in Ni-Mn-Ga magnetic shape memory alloys: A detailed phase diagram determination

NASA Astrophysics Data System (ADS)

Ćakιr, Aslι; Righi, Lara; Albertini, Franca; Acet, Mehmet; Farle, Michael; Aktürk, Selçuk

2013-11-01

Martensitic transitions in shape memory Ni-Mn-Ga Heusler alloys take place between a high temperature austenite and a low temperature martensite phase. However, intermartensitic transformations have also been encountered that occur from one martensite phase to another. To examine intermartensitic transitions in magnetic shape memory alloys in detail, we carried out temperature dependent magnetization, resistivity, and x-ray diffraction measurements to investigate the intermartensitic transition in Ni50Mn50-xGax in the composition range 12≤x≤25 at. %. Rietveld refined x-ray diffraction results are found to be consistent with magnetization and resistivity data. Depending on composition, we observe that intermartensitic transitions occur in the sequences 7M→L10, 5M →7M, and 5M→7M→L10 with decreasing temperature. The L10 non-modulated structure is most stable at low temperature.

Magnetic-field-controlled reconfigurable semiconductor logic.

PubMed

Joo, Sungjung; Kim, Taeyueb; Shin, Sang Hoon; Lim, Ju Young; Hong, Jinki; Song, Jin Dong; Chang, Joonyeon; Lee, Hyun-Woo; Rhie, Kungwon; Han, Suk Hee; Shin, Kyung-Ho; Johnson, Mark

2013-02-07

Logic devices based on magnetism show promise for increasing computational efficiency while decreasing consumed power. They offer zero quiescent power and yet combine novel functions such as programmable logic operation and non-volatile built-in memory. However, practical efforts to adapt a magnetic device to logic suffer from a low signal-to-noise ratio and other performance attributes that are not adequate for logic gates. Rather than exploiting magnetoresistive effects that result from spin-dependent transport of carriers, we have approached the development of a magnetic logic device in a different way: we use the phenomenon of large magnetoresistance found in non-magnetic semiconductors in high electric fields. Here we report a device showing a strong diode characteristic that is highly sensitive to both the sign and the magnitude of an external magnetic field, offering a reversible change between two different characteristic states by the application of a magnetic field. This feature results from magnetic control of carrier generation and recombination in an InSb p-n bilayer channel. Simple circuits combining such elementary devices are fabricated and tested, and Boolean logic functions including AND, OR, NAND and NOR are performed. They are programmed dynamically by external electric or magnetic signals, demonstrating magnetic-field-controlled semiconductor reconfigurable logic at room temperature. This magnetic technology permits a new kind of spintronic device, characterized as a current switch rather than a voltage switch, and provides a simple and compact platform for non-volatile reconfigurable logic devices.

Direct observation of the alignment of ferromagnetic spins by antiferromagnetic spins

NASA Astrophysics Data System (ADS)

Nolting, F.; Scholl, A.; Stöhr, J.; Seo, J. W.; Fompeyrine, J.; Siegwart, H.; Locquet, J.-P.; Anders, S.; Lüning, J.; Fullerton, E. E.; Toney, M. F.; Scheinfein, M. R.; Padmore, H. A.

2000-06-01

The arrangement of spins at interfaces in a layered magnetic material often has an important effect on the properties of the material. One example of this is the directional coupling between the spins in an antiferromagnet and those in an adjacent ferromagnet, an effect first discovered in 1956 and referred to as exchange bias. Because of its technological importance for the development of advanced devices such as magnetic read heads and magnetic memory cells, this phenomenon has received much attention. Despite extensive studies, however, exchange bias is still poorly understood, largely due to the lack of techniques capable of providing detailed information about the arrangement of magnetic moments near interfaces. Here we present polarization-dependent X-ray magnetic dichroism spectro-microscopy that reveals the micromagnetic structure on both sides of a ferromagnetic-antiferromagnetic interface. Images of thin ferromagnetic Co films grown on antiferromagnetic LaFeO3 show a direct link between the arrangement of spins in each material. Remanent hysteresis loops, recorded for individual ferromagnetic domains, show a local exchange bias. Our results imply that the alignment of the ferromagnetic spins is determined, domain by domain, by the spin directions in the underlying antiferromagnetic layer.

Wireless and passive temperature indicator utilizing the large hysteresis of magnetic shape memory alloys

NASA Astrophysics Data System (ADS)

Bergmair, Bernhard; Liu, Jian; Huber, Thomas; Gutfleisch, Oliver; Suess, Dieter

2012-07-01

An ultra-low cost, wireless magnetoelastic temperature indicator is presented. It comprises a magnetostrictive amorphous ribbon, a Ni-Mn-Sn-Co magnetic shape memory alloy with a highly tunable transformation temperature, and a bias magnet. It allows to remotely detect irreversible changes due to transgressions of upper or lower temperature thresholds. Therefore, the proposed temperature indicator is particularly suitable for monitoring the temperature-controlled supply chain of, e.g., deep frozen and chilled food or pharmaceuticals.

Conductance Quantization in Resistive Random Access Memory

NASA Astrophysics Data System (ADS)

Li, Yang; Long, Shibing; Liu, Yang; Hu, Chen; Teng, Jiao; Liu, Qi; Lv, Hangbing; Suñé, Jordi; Liu, Ming

2015-10-01

The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory. The RRAM device also exhibits rich electrical, thermal, magnetic, and optical effects, in close correlation with the abundant resistive switching (RS) materials, metal-oxide interface, and multiple RS mechanisms including the formation/rupture of nanoscale to atomic-sized conductive filament (CF) incorporated in RS layer. Conductance quantization effect has been observed in the atomic-sized CF in RRAM, which provides a good opportunity to deeply investigate the RS mechanism in mesoscopic dimension. In this review paper, the operating principles of RRAM are introduced first, followed by the summarization of the basic conductance quantization phenomenon in RRAM and the related RS mechanisms, device structures, and material system. Then, we discuss the theory and modeling of quantum transport in RRAM. Finally, we present the opportunities and challenges in quantized RRAM devices and our views on the future prospects.

Conductance Quantization in Resistive Random Access Memory.

PubMed

Li, Yang; Long, Shibing; Liu, Yang; Hu, Chen; Teng, Jiao; Liu, Qi; Lv, Hangbing; Suñé, Jordi; Liu, Ming

2015-12-01

The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory. The RRAM device also exhibits rich electrical, thermal, magnetic, and optical effects, in close correlation with the abundant resistive switching (RS) materials, metal-oxide interface, and multiple RS mechanisms including the formation/rupture of nanoscale to atomic-sized conductive filament (CF) incorporated in RS layer. Conductance quantization effect has been observed in the atomic-sized CF in RRAM, which provides a good opportunity to deeply investigate the RS mechanism in mesoscopic dimension. In this review paper, the operating principles of RRAM are introduced first, followed by the summarization of the basic conductance quantization phenomenon in RRAM and the related RS mechanisms, device structures, and material system. Then, we discuss the theory and modeling of quantum transport in RRAM. Finally, we present the opportunities and challenges in quantized RRAM devices and our views on the future prospects.

Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited)

NASA Astrophysics Data System (ADS)

Ando, K.; Fujita, S.; Ito, J.; Yuasa, S.; Suzuki, Y.; Nakatani, Y.; Miyazaki, T.; Yoda, H.

2014-05-01

Most parts of present computer systems are made of volatile devices, and the power to supply them to avoid information loss causes huge energy losses. We can eliminate this meaningless energy loss by utilizing the non-volatile function of advanced spin-transfer torque magnetoresistive random-access memory (STT-MRAM) technology and create a new type of computer, i.e., normally off computers. Critical tasks to achieve normally off computers are implementations of STT-MRAM technologies in the main memory and low-level cache memories. STT-MRAM technology for applications to the main memory has been successfully developed by using perpendicular STT-MRAMs, and faster STT-MRAM technologies for applications to the cache memory are now being developed. The present status of STT-MRAMs and challenges that remain for normally off computers are discussed.

Spin-Transfer Studies in Magnetic Multilayer Nanostructures

NASA Astrophysics Data System (ADS)

Emley, N. C.; Albert, F. J.; Ryan, E. M.; Krivorotov, I. N.; Ralph, D. C.; Buhrman, R. A.

2003-03-01

Numerous experiments have demonstrated current-induced magnetization reversal in ferromagnet/paramagnet/ferromagnet nanostructures with the current in the CPP geometry. The primary mechanism for this reversal is the transfer of angular momentum from the spin-polarized conduction electrons to the nanomagnet moment the spin transfer effect. This phenomenon has potential application in nanoscale, current-controlled non-volatile memory elements, but several challenges must be overcome for realistic device implementation. Typical Co/Cu/Co nanopillar devices, although effective for fundamental studies, are not advantageous for technological applications because of their large switching currents Ic ( 3-10 mA) and small R·A (< 1 mΩ·µm^2). Here we report initial results testing some possible approaches for enhancing spin-transfer device performance which involve the addition of more layers, and hence, more complexity, to the simple Co/Cu/Co trilayer structure. These additions include synthetic antiferromagnet layers (SAF), exchange biased layers, nano-oxide layers (NOL), and additional magnetic layers. Research supported by NSF and DARPA

Room temperature ferroelectricity in one-dimensional single chain molecular magnets [{M(Δ)M(Λ)}(ox)2(phen)2]n (M = Fe and Mn)

NASA Astrophysics Data System (ADS)

Bhatt, Pramod; Mukadam, M. D.; Meena, S. S.; Mishra, S. K.; Mittal, R.; Sastry, P. U.; Mandal, B. P.; Yusuf, S. M.

2017-03-01

The ferroelectric materials are mainly focused on pure inorganic oxides; however, the organic molecule based materials have recently attracted great attention because of their multifunctional properties. The mixing of oxalate and phenanthroline ligands with metal ions (Fe or Mn) at room temperature followed by hydrothermal treatment results in the formation of one-dimensional single chain molecular magnets which exhibit room temperature dielectric and ferroelectric behavior. The compounds are chiral in nature, and exhibit a ferroelectric behavior, attributed to the polar point group C2, in which they crystallized. The compounds are also associated with a dielectric loss and thus a relaxation process. The observed electric dipole moment, essential for a ferroelectricity, has been understood quantitatively in terms of lattice distortions at two different lattice sites within the crystal structure. The studied single chain molecular magnetic materials with room temperature ferroelectric and dielectric properties could be of great technological importance in non-volatile memory elements, and high-performance insulators.

Emerging memories

NASA Astrophysics Data System (ADS)

Baldi, Livio; Bez, Roberto; Sandhu, Gurtej

2014-12-01

Memory is a key component of any data processing system. Following the classical Turing machine approach, memories hold both the data to be processed and the rules for processing them. In the history of microelectronics, the distinction has been rather between working memory, which is exemplified by DRAM, and storage memory, exemplified by NAND. These two types of memory devices now represent 90% of all memory market and 25% of the total semiconductor market, and have been the technology drivers in the last decades. Even if radically different in characteristics, they are however based on the same storage mechanism: charge storage, and this mechanism seems to be near to reaching its physical limits. The search for new alternative memory approaches, based on more scalable mechanisms, has therefore gained new momentum. The status of incumbent memory technologies and their scaling limitations will be discussed. Emerging memory technologies will be analyzed, starting from the ones that are already present for niche applications, and which are getting new attention, thanks to recent technology breakthroughs. Maturity level, physical limitations and potential for scaling will be compared to existing memories. At the end the possible future composition of memory systems will be discussed.

A Digital Control Algorithm for Magnetic Suspension Systems

NASA Technical Reports Server (NTRS)

Britton, Thomas C.

1996-01-01

An ongoing program exists to investigate and develop magnetic suspension technologies and modelling techniques at NASA Langley Research Center. Presently, there is a laboratory-scale large air-gap suspension system capable of five degree-of-freedom (DOF) control that is operational and a six DOF system that is under development. Those systems levitate a cylindrical element containing a permanent magnet core above a planar array of electromagnets, which are used for levitation and control purposes. In order to evaluate various control approaches with those systems, the Generic Real-Time State-Space Controller (GRTSSC) software package was developed. That control software package allows the user to implement multiple control methods and allows for varied input/output commands. The development of the control algorithm is presented. The desired functionality of the software is discussed, including the ability to inject noise on sensor inputs and/or actuator outputs. Various limitations, common issues, and trade-offs are discussed including data format precision; the drawbacks of using either Direct Memory Access (DMA), interrupts, or program control techniques for data acquisition; and platform dependent concerns related to the portability of the software, such as memory addressing formats. Efforts to minimize overall controller loop-rate and a comparison of achievable controller sample rates are discussed. The implementation of a modular code structure is presented. The format for the controller input data file and the noise information file is presented. Controller input vector information is available for post-processing by mathematical analysis software such as MATLAB1.

Low latency and persistent data storage

DOEpatents

Fitch, Blake G; Franceschini, Michele M; Jagmohan, Ashish; Takken, Todd E

2014-02-18

Persistent data storage is provided by a method that includes receiving a low latency store command that includes write data. The write data is written to a first memory device that is implemented by a nonvolatile solid-state memory technology characterized by a first access speed. It is acknowledged that the write data has been successfully written to the first memory device. The write data is written to a second memory device that is implemented by a volatile memory technology. At least a portion of the data in the first memory device is written to a third memory device when a predetermined amount of data has been accumulated in the first memory device. The third memory device is implemented by a nonvolatile solid-state memory technology characterized by a second access speed that is slower than the first access speed.

The ferromagnetic shape-memory effect in Ni Mn Ga

NASA Astrophysics Data System (ADS)

Marioni, M. A.; O'Handley, R. C.; Allen, S. M.; Hall, S. R.; Paul, D. I.; Richard, M. L.; Feuchtwanger, J.; Peterson, B. W.; Chambers, J. M.; Techapiesancharoenkij, R.

2005-04-01

Active materials have long been used in the construction of sensors and devices. Examples are piezo-electric ceramics and shape memory alloys. The more recently developed ferromagnetic shape-memory alloys (FSMAs) have received considerable attention due to their large magnetic field-induced, reversible strains (up to 10%). In this article, we review the basic physical characteristics of the FSMA Ni-Mn-Ga (crystallography, thermal, mechanical and magnetic behavior). Also, we present some of the works currently under way in the areas of pulse-field and acoustic-assisted actuation, and vibration energy absorption.

Propofol and memory: a study using a process dissociation procedure and functional magnetic resonance imaging.

PubMed

Quan, X; Yi, J; Ye, T H; Tian, S Y; Zou, L; Yu, X R; Huang, Y G

2013-04-01

Thirty volunteers randomly received either mild or deep propofol sedation, to assess its effect on explicit and implicit memory. Blood oxygen level-dependent functional magnetic resonance during sedation examined brain activation by auditory word stimulus and a process dissociation procedure was performed 4 h after scanning. Explicit memory formation did not occur in either group. Implicit memories were formed during mild but not deep sedation (p = 0.04). Mild propofol sedation inhibited superior temporal gyrus activation (Z value 4.37, voxel 167). Deep propofol sedation inhibited superior temporal gyrus (Z value 4.25, voxel 351), middle temporal gyrus (Z value 4.39, voxel 351) and inferior parietal lobule (Z value 5.06, voxel 239) activation. Propofol only abolishes implicit memory during deep sedation. The superior temporal gyrus is associated with explicit memory processing, while the formation of both implicit and explicit memories is associated with superior and middle temporal gyri and inferior parietal lobule activation. Anaesthesia © 2013 The Association of Anaesthetists of Great Britain and Ireland.

Topographic contribution of early visual cortex to short-term memory consolidation: a transcranial magnetic stimulation study.

PubMed

van de Ven, Vincent; Jacobs, Christianne; Sack, Alexander T

2012-01-04

The neural correlates for retention of visual information in visual short-term memory are considered separate from those of sensory encoding. However, recent findings suggest that sensory areas may play a role also in short-term memory. We investigated the functional relevance, spatial specificity, and temporal characteristics of human early visual cortex in the consolidation of capacity-limited topographic visual memory using transcranial magnetic stimulation (TMS). Topographically specific TMS pulses were delivered over lateralized occipital cortex at 100, 200, or 400 ms into the retention phase of a modified change detection task with low or high memory loads. For the high but not the low memory load, we found decreased memory performance for memory trials in the visual field contralateral, but not ipsilateral to the side of TMS, when pulses were delivered at 200 ms into the retention interval. A behavioral version of the TMS experiment, in which a distractor stimulus (memory mask) replaced the TMS pulses, further corroborated these findings. Our findings suggest that retinotopic visual cortex contributes to the short-term consolidation of topographic visual memory during early stages of the retention of visual information. Further, TMS-induced interference decreased the strength (amplitude) of the memory representation, which most strongly affected the high memory load trials.

Permanent magnet online magnetization performance analysis of a flux mnemonic double salient motor using an improved hysteresis model

NASA Astrophysics Data System (ADS)

Zhu, Xiaoyong; Quan, Li; Chen, Yunyun; Liu, Guohai; Shen, Yue; Liu, Hui

2012-04-01

The concept of the memory motor is based on the fact that the magnetization level of the AlNiCo permanent magnet in the motor can be regulated by a temporary current pulse and memorized automatically. In this paper, a new type of memory motor is proposed, namely a flux mnemonic double salient motor drive, which is particularly attractive for electric vehicles. To accurately analyze the motor, an improved hysteresis model is employed in the time-stepping finite element method. Both simulation and experimental results are given to verify the validity of the new method.

Quantum Mechanics - Fundamentals and Applications to Technology

NASA Astrophysics Data System (ADS)

Singh, Jasprit

1996-10-01

Explore the relationship between quantum mechanics and information-age applications This volume takes an altogether unique approach to quantum mechanics. Providing an in-depth exposition of quantum mechanics fundamentals, it shows how these concepts are applied to most of today's information technologies, whether they are electronic devices or materials. No other text makes this critical, essential leap from theory to real-world applications. The book's lively discussion of the mathematics involved fits right in with contemporary multidisciplinary trends in education: Once the basic formulation has been derived in a given chapter, the connection to important technological problems is summarily described. The many helpful features include * Twenty-eight application-oriented sections that focus on lasers, transistors, magnetic memories, superconductors, nuclear magnetic resonance (NMR), and other important technology-driving materials and devices * One hundred solved examples, with an emphasis on numerical results and the connection between the physics and its applications * End-of-chapter problems that ground the student in both fundamental and applied concepts * Numerous figures and tables to clarify the various topics and provide a global view of the problems under discussion * Over two hundred illustrations to highlight problems and text A book for the information age, Quantum Mechanics: Fundamentals and Applications to Technology promises to become a standard in departments of electrical engineering, applied physics, and materials science, as well as physics. It is an excellent text for senior undergraduate and graduate students, and a helpful reference for practicing scientists, engineers, and chemists in the semiconductor and electronic industries.

Structural health monitoring for DOT using magnetic shape memory alloy cables in concrete

NASA Astrophysics Data System (ADS)

Davis, Allen; Mirsayar, Mirmilad; Sheahan, Emery; Hartl, Darren

2018-03-01

Embedding shape memory alloy (SMA) wires in concrete components offers the potential to monitor their structural health via external magnetic field sensing. Currently, structural health monitoring (SHM) is dominated by acoustic emission and vibration-based methods. Thus, it is attractive to pursue alternative damage sensing techniques that may lower the cost or increase the accuracy of SHM. In this work, SHM via magnetic field detection applied to embedded magnetic shape memory alloy (MSMA) is demonstrated both experimentally and using computational models. A concrete beam containing iron-based MSMA wire is subjected to a 3-point bend test where structural damage is induced, thereby resulting in a localized phase change of the MSMA wire. Magnetic field lines passing through the embedded MSMA domain are altered by this phase change and can thus be used to detect damage within the structure. A good correlation is observed between the computational and experimental results. Additionally, the implementation of stranded MSMA cables in place of the MSMA wire is assessed through similar computational models. The combination of these computational models and their subsequent experimental validation provide sufficient support for the feasibility of SHM using magnetic field sensing via MSMA embedded components.

Episode-Centered Guidelines for Teacher Belief Change toward Technology Integration

ERIC Educational Resources Information Center

Er, Erkan; Kim, ChanMin

2017-01-01

Teachers' episodic memories influence their beliefs. The investigation of episodic memories can help identify the teacher beliefs that limit technology-integration. We propose the Episode-Centered Belief Change (ECBC) model that utilizes teachers' episodic memories for changing beliefs impeding effective technology integration. We also propose…

Low latency and persistent data storage

DOEpatents

Fitch, Blake G; Franceschini, Michele M; Jagmohan, Ashish; Takken, Todd

2014-11-04

Persistent data storage is provided by a computer program product that includes computer program code configured for receiving a low latency store command that includes write data. The write data is written to a first memory device that is implemented by a nonvolatile solid-state memory technology characterized by a first access speed. It is acknowledged that the write data has been successfully written to the first memory device. The write data is written to a second memory device that is implemented by a volatile memory technology. At least a portion of the data in the first memory device is written to a third memory device when a predetermined amount of data has been accumulated in the first memory device. The third memory device is implemented by a nonvolatile solid-state memory technology characterized by a second access speed that is slower than the first access speed.

Enhanced voltage-controlled magnetic anisotropy in magnetic tunnel junctions with an MgO/PZT/MgO tunnel barrier

NASA Astrophysics Data System (ADS)

Chien, Diana; Li, Xiang; Wong, Kin; Zurbuchen, Mark A.; Robbennolt, Shauna; Yu, Guoqiang; Tolbert, Sarah; Kioussis, Nicholas; Khalili Amiri, Pedram; Wang, Kang L.; Chang, Jane P.

2016-03-01

Compared with current-controlled magnetization switching in a perpendicular magnetic tunnel junction (MTJ), electric field- or voltage-induced magnetization switching reduces the writing energy of the memory cell, which also results in increased memory density. In this work, an ultra-thin PZT film with high dielectric constant was integrated into the tunneling oxide layer to enhance the voltage-controlled magnetic anisotropy (VCMA) effect. The growth of MTJ stacks with an MgO/PZT/MgO tunnel barrier was performed using a combination of sputtering and atomic layer deposition techniques. The fabricated MTJs with the MgO/PZT/MgO barrier demonstrate a VCMA coefficient, which is ˜40% higher (19.8 ± 1.3 fJ/V m) than the control sample MTJs with an MgO barrier (14.3 ± 2.7 fJ/V m). The MTJs with the MgO/PZT/MgO barrier also possess a sizeable tunneling magnetoresistance (TMR) of more than 50% at room temperature, comparable to the control MTJs with an MgO barrier. The TMR and enhanced VCMA effect demonstrated simultaneously in this work make the MgO/PZT/MgO barrier-based MTJs potential candidates for future voltage-controlled, ultralow-power, and high-density magnetic random access memory devices.

Evaluation of phase transformation in ferromagnetic shape memory Fe-Pd alloy by magnetic Barkhausen noise

NASA Astrophysics Data System (ADS)

Furuya, Yasubumi; Tamoto, Shizuka; Kubota, Takeshi; Okazaki, Teiko; Hagood, Nesbitt W.; Spearing, S. Mark

2002-07-01

The possibility to detect the phase transformation with martensites by heating or cooling as well as stress-loading in ferromagnetic shape memory Fe-30at percent Pd alloy thin foil by using magnetic Markhausen noise sensor was studied. MBHN is caused by the irregular interactions between magnetic domain and thermally activated martensite twins during magnetization. In general, the envelope of the MBHN voltage versus time signals in Fe-29at percent Pd ribbon showed two peaks during magnetization, where secondary peak at intermediate state of magnetization process decreased with increasing temperature, while the MBHN envelopes in pure iron did not change with increasing temperature. The variety of MBHN due to the phase transformation was apt to arise at higher frequency part of spectrum during intermediate state of magnetization process and it decreased with disappearance of martensite twins. Besides, MBHN increased monotonically with increasing loading stress and then, it decreased with unloading, however MBHN showed large hysteresis between loading and unloading passes. Based on the experimental results from MBHN measurements for both thermoelastic and stress-induced martensite phase transformations in Fe-30at percent Pd ribbon samples, MBHN method seems a useful technique to non-destructive evaluation of martensite phase transformation of ferromagnetic shape memory alloy.

Sensor technology more than a support.

PubMed

Olsson, Anna; Persson, Ann-Christine; Bartfai, Aniko; Boman, Inga-Lill

2018-03-01

This interview study is a part of a project that evaluated sensor technology as a support in everyday activities for patients with memory impairment. To explore patients with memory impairment and their partners' experiences of using sensor technology in their homes. Five patients with memory impairment after stroke and three partners were interviewed. Individual semi-structured interviews were analyzed with qualitative content analysis. Installing sensor technology with individually prerecorded voice reminders as memory support in the home had a broad impact on patients' and their families' lives. These effects were both positive and negative. The sensor technology not only supported activities but also influenced the patients by changing behavior, providing a sense of security, independence and increased self-confidence. For the partners, the sensor technology eased daily life, but also gave increased responsibility for maintenance. Technical problems led to frustration and stress for the patients. The results indicate that sensor technology has potential to increase opportunities for persons with memory impairment to perform and participate in activities and to unburden their partners. The results may promote an understanding of how sensor technology can be used to support persons with memory impairment in their homes.

A multi-state magnetic memory dependent on the permeability of Metglas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petrie, J. R.; Wieland, K. A.; Timmerwilke, J. M.

A three-state magnetic memory was developed based on differences in the magnetic permeability of a soft ferromagnetic media, Metglas 2826MB (Fe{sub 40}Ni{sub 38}Mo{sub 4}B{sub 18}). By heating bits of a 250 nm thick Metglas film with 70–100 mW of laser power, we were able to tune the local microstructure, and hence, the permeability. Ternary memory states were created by using lower laser power to enhance the initial permeability through localized atomic rearrangement and higher power to reduce the permeability through crystallization. The permeability of the bits was read by detecting variations in an external 32 Oe probe field within 10 μm ofmore » the media via a magnetic tunnel junction read head. Compared to data based on remanent magnetization, these multi-permeability bits have enhanced insensitivity to unexpected field and temperature changes. We found that data was not corrupted after exposure to fields of 1 T or temperatures of 423 K, indicating the effectiveness of this multi-state approach for safely storing large amounts of data.« less

Piezomagnetism and magnetoelastic memory in uranium dioxide

DOE PAGES

Jaime, M.; Saul, A.; Salamon, M.; ...

2017-07-24

Uranium dioxide (UO 2) is a prime nuclear fuel and perhaps the most thoroughly studied actinide material to date. Its thermal and magnetic properties remain, however, a puzzle resulting from strong couplings between magnetism and lattice vibrations. The magnetic state of this cubic material is characterized by a non- collinear antiferromagnetic structure and multidomain Jahn-Teller distortions that could be behind novel thermal properties. Here we show that single crystals of UO 2, subjected to magnetic fields up to 95 T in the magnetic state, exhibit the abrupt appearance of positive linear magnetostriction leading to a trigonal distortion. Upon reversal ofmore » the field the linear term also reverses sign, a hallmark of piezomagnetism. The switching phenomenon occurs at ± 18 T and persists during subsequent field reversals, demonstrating robust magneto-elastic memory. This is the first example of piezomagnetism in an actinide spin system and the magneto-elastic memory loop here is nearly an order of magnitude wider in field than those previously observed, making UO 2 the hardest piezomagnet known. The possibility of an inverse phase with reduced magnetocrystalline anisotropy is considered to explain these effects.« less

Piezomagnetism and magnetoelastic memory in uranium dioxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jaime, M.; Saul, A.; Salamon, M.

Uranium dioxide (UO 2) is a prime nuclear fuel and perhaps the most thoroughly studied actinide material to date. Its thermal and magnetic properties remain, however, a puzzle resulting from strong couplings between magnetism and lattice vibrations. The magnetic state of this cubic material is characterized by a non- collinear antiferromagnetic structure and multidomain Jahn-Teller distortions that could be behind novel thermal properties. Here we show that single crystals of UO 2, subjected to magnetic fields up to 95 T in the magnetic state, exhibit the abrupt appearance of positive linear magnetostriction leading to a trigonal distortion. Upon reversal ofmore » the field the linear term also reverses sign, a hallmark of piezomagnetism. The switching phenomenon occurs at ± 18 T and persists during subsequent field reversals, demonstrating robust magneto-elastic memory. This is the first example of piezomagnetism in an actinide spin system and the magneto-elastic memory loop here is nearly an order of magnitude wider in field than those previously observed, making UO 2 the hardest piezomagnet known. The possibility of an inverse phase with reduced magnetocrystalline anisotropy is considered to explain these effects.« less

RF assisted switching in magnetic Josephson junctions

NASA Astrophysics Data System (ADS)

Caruso, R.; Massarotti, D.; Bolginov, V. V.; Ben Hamida, A.; Karelina, L. N.; Miano, A.; Vernik, I. V.; Tafuri, F.; Ryazanov, V. V.; Mukhanov, O. A.; Pepe, G. P.

2018-04-01

We test the effect of an external RF field on the switching processes of magnetic Josephson junctions (MJJs) suitable for the realization of fast, scalable cryogenic memories compatible with Single Flux Quantum logic. We show that the combined application of microwaves and magnetic field pulses can improve the performances of the device, increasing the separation between the critical current levels corresponding to logical "0" and "1." The enhancement of the current level separation can be as high as 80% using an optimal set of parameters. We demonstrate that external RF fields can be used as an additional tool to manipulate the memory states, and we expect that this approach may lead to the development of new methods of selecting MJJs and manipulating their states in memory arrays for various applications.

Optimization of Materials and Interfaces for Spintronic Devices

NASA Astrophysics Data System (ADS)

Clark, Billy

In recent years' Spintronic devices have drawn a significant amount of research attention. This interest comes in large part from their ability to enable interesting and new technology such as Spin Torque Transfer Random Access Memory or improve existing technology such as High Signal Read Heads for Hard Disk Drives. For the former we worked on optimizing and improving magnetic tunnel junctions by optimizing their thermal stability by using Ta insertion layers in the free layer. We further tried to simplify the design of the MTJ stack by attempting to replace the Co/Pd multilayer with CoPd alloy. In this dissertation, we detail its development and examine the switching characteristics. Lastly we look at a highly spin polarized material, Fe2MnGe, for optimizing Hard Drive Disk read heads.

Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues

NASA Astrophysics Data System (ADS)

Noé, Pierre; Vallée, Christophe; Hippert, Françoise; Fillot, Frédéric; Raty, Jean-Yves

2018-01-01

Chalcogenide phase-change materials (PCMs), such as Ge-Sb-Te alloys, have shown outstanding properties, which has led to their successful use for a long time in optical memories (DVDs) and, recently, in non-volatile resistive memories. The latter, known as PCM memories or phase-change random access memories (PCRAMs), are the most promising candidates among emerging non-volatile memory (NVM) technologies to replace the current FLASH memories at CMOS technology nodes under 28 nm. Chalcogenide PCMs exhibit fast and reversible phase transformations between crystalline and amorphous states with very different transport and optical properties leading to a unique set of features for PCRAMs, such as fast programming, good cyclability, high scalability, multi-level storage capability, and good data retention. Nevertheless, PCM memory technology has to overcome several challenges to definitively invade the NVM market. In this review paper, we examine the main technological challenges that PCM memory technology must face and we illustrate how new memory architecture, innovative deposition methods, and PCM composition optimization can contribute to further improvements of this technology. In particular, we examine how to lower the programming currents and increase data retention. Scaling down PCM memories for large-scale integration means the incorporation of the PCM into more and more confined structures and raises materials science issues in order to understand interface and size effects on crystallization. Other materials science issues are related to the stability and ageing of the amorphous state of PCMs. The stability of the amorphous phase, which determines data retention in memory devices, can be increased by doping the PCM. Ageing of the amorphous phase leads to a large increase of the resistivity with time (resistance drift), which has up to now hindered the development of ultra-high multi-level storage devices. A review of the current understanding of all these issues is provided from a materials science point of view.

Advanced detectors and signal processing

NASA Technical Reports Server (NTRS)

Greve, D. W.; Rasky, P. H. L.; Kryder, M. H.

1986-01-01

Continued progress is reported toward development of a silicon on garnet technology which would allow fabrication of advanced detection and signal processing circuits on bubble memories. The first integrated detectors and propagation patterns have been designed and incorporated on a new mask set. In addition, annealing studies on spacer layers are performed. Based on those studies, a new double layer spacer is proposed which should reduce contamination of the silicon originating in the substrate. Finally, the magnetic sensitivity of uncontaminated detectors from the last lot of wafers is measured. The measured sensitivity is lower than anticipated but still higher than present magnetoresistive detectors.

A case for Redundant Arrays of Inexpensive Disks (RAID)

NASA Technical Reports Server (NTRS)

Patterson, David A.; Gibson, Garth; Katz, Randy H.

1988-01-01

Increasing performance of CPUs and memories will be squandered if not matched by a similar performance increase in I/O. While the capacity of Single Large Expensive Disks (SLED) has grown rapidly, the performance improvement of SLED has been modest. Redundant Arrays of Inexpensive Disks (RAID), based on the magnetic disk technology developed for personal computers, offers an attractive alternative to SLED, promising improvements of an order of magnitude in performance, reliability, power consumption, and scalability. This paper introduces five levels of RAIDs, giving their relative cost/performance, and compares RAID to an IBM 3380 and a Fujitsu Super Eagle.

Energy-efficient writing scheme for magnetic domain-wall motion memory

NASA Astrophysics Data System (ADS)

Kim, Kab-Jin; Yoshimura, Yoko; Ham, Woo Seung; Ernst, Rick; Hirata, Yuushou; Li, Tian; Kim, Sanghoon; Moriyama, Takahiro; Nakatani, Yoshinobu; Ono, Teruo

2017-04-01

We present an energy-efficient magnetic domain-writing scheme for domain wall (DW) motion-based memory devices. A cross-shaped nanowire is employed to inject a domain into the nanowire through current-induced DW propagation. The energy required for injecting the magnetic domain is more than one order of magnitude lower than that for the conventional field-based writing scheme. The proposed scheme is beneficial for device miniaturization because the threshold current for DW propagation scales with the device size, which cannot be achieved in the conventional field-based technique.

Effect of Heat-Treatment on the Phases of Ni-Mn-Ga Magnetic Shape Memory Alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huq, Ashfia; Ari-Gur, Pnina; Kimmel, Giora

2009-01-01

The Heusler alloys Ni50Mn25+xGa25-x display magnetic shape memory effect (MSM) with very fast and large reversible strain under magnetic fields. This large strain and the speed of reaction make MSM alloys attractive as smart materials. Our crystallographic investigation of these alloys, focused on non-stoichiometric composition with excess of manganese. Using neutron diffraction, we revealed the necessary processing parameters to achieve and preserve the homogeneous metastable one-phase martensitic structure that is needed for an MSM effect at room temperature.

Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clément, P.-Y.; Baraduc, C., E-mail: claire.baraduc@cea.fr; Chshiev, M.

2015-09-07

Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pavemore » the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated.« less

Implementing a bubble memory hierarchy system

NASA Technical Reports Server (NTRS)

Segura, R.; Nichols, C. D.

1979-01-01

This paper reports on implementation of a magnetic bubble memory in a two-level hierarchial system. The hierarchy used a major-minor loop device and RAM under microprocessor control. Dynamic memory addressing, dual bus primary memory, and hardware data modification detection are incorporated in the system to minimize access time. It is the objective of the system to incorporate the advantages of bipolar memory with that of bubble domain memory to provide a smart, optimal memory system which is easy to interface and independent of user's system.

Design of a Vertical Composite Thin Film System with Ultralow Leakage To Yield Large Converse Magnetoelectric Effect.

PubMed

Wu, Rui; Kursumovic, Ahmed; Gao, Xingyao; Yun, Chao; Vickers, Mary E; Wang, Haiyan; Cho, Seungho; MacManus-Driscoll, Judith L

2018-05-30

Electric field control of magnetism is a critical future technology for low-power, ultrahigh density memory. However, despite intensive research efforts, no practical material systems have emerged. Interface-coupled, composite systems containing ferroelectric and ferri-/ferromagnetic elements have been widely explored, but they have a range of problems, for example, substrate clamping, large leakage, and inability to miniaturize. In this work, through careful material selection, design, and nanoengineering, a high-performance room-temperature magnetoelectric system is demonstrated. The clamping problem is overcome by using a vertically aligned nanocomposite structure in which the strain coupling is independent of the substrate. To overcome the leakage problem, three key novel advances are introduced: a low leakage ferroelectric, Na 0.5 Bi 0.5 TiO 3 ; ferroelectric-ferrimagnetic vertical interfaces which are not conducting; and current blockage via a rectifying interface between the film and the Nb-doped SrTiO 3 substrate. The new multiferroic nanocomposite (Na 0.5 Bi 0.5 TiO 3 -CoFe 2 O 4 ) thin-film system enables, for the first time, large-scale in situ electric field control of magnetic anisotropy at room temperature in a system applicable for magnetoelectric random access memory, with a magnetoelectric coefficient of 1.25 × 10 -9 s m -1 .

Bio/Nano Electronic Devices and Sensors

DTIC Science & Technology

2008-10-01

Microscopy and Microanalysis 2006 Meeting, Chicago, IL, July 30 - August 3, 2006 4) S. Khizroev, "Three-dimensional Magnetic Memory," presented at US Air...ABSTRACT This effort consists of five research thrusts: (1) Dense Memory Devices-(1)3-D magnetic recording was enhanced using patterned soft underlayers...and interlayer, (2) Cold cathode microwave generator and ceramic electron multiplier-ceramic multiplier using a novel secondary electron yield

Nonvolatile GaAs Random-Access Memory

NASA Technical Reports Server (NTRS)

Katti, Romney R.; Stadler, Henry L.; Wu, Jiin-Chuan

1994-01-01

Proposed random-access integrated-circuit electronic memory offers nonvolatile magnetic storage. Bits stored magnetically and read out with Hall-effect sensors. Advantages include short reading and writing times and high degree of immunity to both single-event upsets and permanent damage by ionizing radiation. Use of same basic material for both transistors and sensors simplifies fabrication process, with consequent benefits in increased yield and reduced cost.

Field-induced magnetic phase transitions and memory effect in bilayer ruthenate Ca 3Ru 2O 7 with Fe substitution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, M.; Hong, Tao; Peng, J.

Bilayer ruthenate Ca 3(Ru 1-xFe x) 2O 7 (x = 0.05) exhibits an incommensurate magnetic soliton lattice driven by the Dzyaloshinskii–Moriya interaction. Here, in this work, we report complex field-induced magnetic phase transitions and memory effect in this system via single-crystal neutron diffraction and magnetotransport measurements. We observe first-order incommensurate-to-commensurate magnetic transitions upon applying the magnetic field both along and perpendicular to the propagation axis of the incommensurate spin structure. Furthermore, we find that the metastable states formed upon decreasing the magnetic field depend on the temperature and the applied field orientation. Lastly, we suggest that the observed field-induced metastabilitymore » may be ascribable to the quenched kinetics at low temperature.« less

Field-induced magnetic phase transitions and memory effect in bilayer ruthenate Ca 3Ru 2O 7 with Fe substitution

DOE PAGES

Zhu, M.; Hong, Tao; Peng, J.; ...

2018-01-09

Bilayer ruthenate Ca 3(Ru 1-xFe x) 2O 7 (x = 0.05) exhibits an incommensurate magnetic soliton lattice driven by the Dzyaloshinskii–Moriya interaction. Here, in this work, we report complex field-induced magnetic phase transitions and memory effect in this system via single-crystal neutron diffraction and magnetotransport measurements. We observe first-order incommensurate-to-commensurate magnetic transitions upon applying the magnetic field both along and perpendicular to the propagation axis of the incommensurate spin structure. Furthermore, we find that the metastable states formed upon decreasing the magnetic field depend on the temperature and the applied field orientation. Lastly, we suggest that the observed field-induced metastabilitymore » may be ascribable to the quenched kinetics at low temperature.« less

Ultra-fast three terminal perpendicular spin-orbit torque MRAM (Presentation Recording)

NASA Astrophysics Data System (ADS)

Boulle, Olivier; Cubukcu, Murat; Hamelin, Claire; Lamard, Nathalie; Buda-Prejbeanu, Liliana; Mikuszeit, Nikolai; Garello, Kevin; Gambardella, Pietro; Langer, Juergen; Ocker, Berthold; Miron, Mihai; Gaudin, Gilles

2015-09-01

The discovery that a current flowing in a heavy metal can exert a torque on a neighboring ferromagnet has opened a new way to manipulate the magnetization at the nanoscale. This "spin orbit torque" (SOT) has been demonstrated in ultrathin magnetic multilayers with structural inversion asymmetry (SIA) and high spin orbit coupling, such as Pt/Co/AlOx multilayers. We have shown that this torque can lead to the magnetization switching of a perpendicularly magnetized nanomagnet by an in-plane current injection. The manipulation of magnetization by SOT has led to a novel concept of magnetic RAM memory, the SOT-MRAM, which combines non volatility, high speed, reliability and large endurance. These features make the SOT-MRAM a good candidate to replace SRAM for non-volatile cache memory application. We will present the proof of concept of a perpendicular SOT-MRAM cell composed of a Ta/FeCoB/MgO/FeCoB magnetic tunnel junction and demonstrate ultra-fast (down to 300 ps) deterministic bipolar magnetization switching. Macrospin and micromagnetic simulations including SOT cannot reproduce the experimental results, which suggests that additional physical mechanisms are at stacks. Our results show that SOT-MRAM is fast, reliable and low power, which is promising for non-volatile cache memory application. We will also discuss recent experiments of magnetization reversal in ultrathin multilayers Pt/Co/AlOx by very short (<200 ps) current pulses. We will show that in this material, the Dzyaloshinskii-Moryia interaction plays a key role in the reversal process.

Extended investigation of intermartensitic transitions in Ni-Mn-Ga magnetic shape memory alloys: A detailed phase diagram determination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Çakir, Asli; Aktürk, Selçuk; Righi, Lara

2013-11-14

Martensitic transitions in shape memory Ni-Mn-Ga Heusler alloys take place between a high temperature austenite and a low temperature martensite phase. However, intermartensitic transformations have also been encountered that occur from one martensite phase to another. To examine intermartensitic transitions in magnetic shape memory alloys in detail, we carried out temperature dependent magnetization, resistivity, and x-ray diffraction measurements to investigate the intermartensitic transition in Ni{sub 50}Mn{sub 50–x}Ga{sub x} in the composition range 12≤x≤25 at. %. Rietveld refined x-ray diffraction results are found to be consistent with magnetization and resistivity data. Depending on composition, we observe that intermartensitic transitions occur inmore » the sequences 7M→L1{sub 0}, 5M→7M, and 5M→7M→L1{sub 0} with decreasing temperature. The L1{sub 0} non-modulated structure is most stable at low temperature.« less

Memory characteristics of ring-shaped ceramic superconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takeoka, A.; Hasunuma, M.; Sakaiya, S.

1989-03-01

For the practical application of ceramic superconductors, the authors investigated the residual magnetic field characteristics of ring-shaped ceramic superconductors in a Y-Ba-Cu-O system with high Tc. The residual magnetic field of a ring with asymmetric current paths, supplied by external currents, appeared when one of the branch currents was above the critical current. The residual magnetic field saturated when both brach currents exceeded the critical current of the ring and showed hysteresis-like characteristics. The saturated magnetic field is subject to the critical current of the ring. A superconducting ring with asymmetric current paths suggests a simple and quite new persistent-currentmore » type memory device.« less

Electron trapping data storage system and applications

NASA Technical Reports Server (NTRS)

Brower, Daniel; Earman, Allen; Chaffin, M. H.

1993-01-01

The advent of digital information storage and retrieval has led to explosive growth in data transmission techniques, data compression alternatives, and the need for high capacity random access data storage. Advances in data storage technologies are limiting the utilization of digitally based systems. New storage technologies will be required which can provide higher data capacities and faster transfer rates in a more compact format. Magnetic disk/tape and current optical data storage technologies do not provide these higher performance requirements for all digital data applications. A new technology developed at the Optex Corporation out-performs all other existing data storage technologies. The Electron Trapping Optical Memory (ETOM) media is capable of storing as much as 14 gigabytes of uncompressed data on a single, double-sided 54 inch disk with a data transfer rate of up to 12 megabits per second. The disk is removable, compact, lightweight, environmentally stable, and robust. Since the Write/Read/Erase (W/R/E) processes are carried out 100 percent photonically, no heating of the recording media is required. Therefore, the storage media suffers no deleterious effects from repeated Write/Read/Erase cycling.

Review of radiation effects on ReRAM devices and technology

NASA Astrophysics Data System (ADS)

Gonzalez-Velo, Yago; Barnaby, Hugh J.; Kozicki, Michael N.

2017-08-01

A review of the ionizing radiation effects on resistive random access memory (ReRAM) technology and devices is presented in this article. The review focuses on vertical devices exhibiting bipolar resistance switching, devices that have already exhibited interesting properties and characteristics for memory applications and, in particular, for non-volatile memory applications. Non-volatile memories are important devices for any type of electronic and embedded system, as they are for space applications. In such applications, specific environmental issues related to the existence of cosmic rays and Van Allen radiation belts around the Earth contribute to specific failure mechanisms related to the energy deposition induced by such ionizing radiation. Such effects are important in non-volatile memory as the current leading technology, i.e. flash-based technology, is sensitive to the total ionizing dose (TID) and single-event effects. New technologies such as ReRAM, if competing with or complementing the existing non-volatile area of memories from the point of view of performance, also have to exhibit great reliability for use in radiation environments such as space. This has driven research on the radiation effects of such ReRAM technology, on both the conductive-bridge RAM as well as the valence-change memories, or OxRAM variants of the technology. Initial characterizations of ReRAM technology showed a high degree of resilience to TID, developing researchers’ interest in characterizing such resilience as well as investigating the cause of such behavior. The state of the art of such research is reviewed in this article.

Memory effects for a stochastic fractional oscillator in a magnetic field

NASA Astrophysics Data System (ADS)

Mankin, Romi; Laas, Katrin; Laas, Tõnu; Paekivi, Sander

2018-01-01

The problem of random motion of harmonically trapped charged particles in a constant external magnetic field is studied. A generalized three-dimensional Langevin equation with a power-law memory kernel is used to model the interaction of Brownian particles with the complex structure of viscoelastic media (e.g., dusty plasmas). The influence of a fluctuating environment is modeled by an additive fractional Gaussian noise. In the long-time limit the exact expressions of the first-order and second-order moments of the fluctuating position for the Brownian particle subjected to an external periodic force in the plane perpendicular to the magnetic field have been calculated. Also, the particle's angular momentum is found. It is shown that an interplay of external periodic forcing, memory, and colored noise can generate a variety of cooperation effects, such as memory-induced sign reversals of the angular momentum, multiresonance versus Larmor frequency, and memory-induced particle confinement in the absence of an external trapping field. Particularly in the case without external trapping, if the memory exponent is lower than a critical value, we find a resonancelike behavior of the anisotropy in the particle position distribution versus the driving frequency, implying that it can be efficiently excited by an oscillating electric field. Similarities and differences between the behaviors of the models with internal and external noises are also discussed.

Power reduction by power gating in differential pair type spin-transfer-torque magnetic random access memories for low-power nonvolatile cache memories

NASA Astrophysics Data System (ADS)

Ohsawa, Takashi; Ikeda, Shoji; Hanyu, Takahiro; Ohno, Hideo; Endoh, Tetsuo

2014-01-01

Array operation currents in spin-transfer-torque magnetic random access memories (STT-MRAMs) that use four differential pair type magnetic tunnel junction (MTJ)-based memory cells (4T2MTJ, two 6T2MTJs and 8T2MTJ) are simulated and compared with that in SRAM. With L3 cache applications in mind, it is assumed that the memories are composed of 32 Mbyte capacity to be accessed in 64 byte in parallel. All the STT-MRAMs except for the 8T2MTJ one are designed with 32 bit fine-grained power gating scheme applied to eliminate static currents in the memory cells that are not accessed. The 8T2MTJ STT-MRAM, the cell’s design concept being not suitable for the fine-grained power gating, loads and saves 32 Mbyte data in 64 Mbyte unit per 1 Mbit sub-array in 2 × 103 cycles. It is shown that the array operation current of the 4T2MTJ STT-MRAM is 70 mA averaged in 15 ns write cycles at Vdd = 0.9 V. This is the smallest among the STT-MRAMs, about the half of the low standby power (LSTP) SRAM whose array operation current is totally dominated by the cells’ subthreshold leakage.

Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale

NASA Astrophysics Data System (ADS)

Zhang, Yue; Zhang, Zhizhong; Wang, Lezhi; Nan, Jiang; Zheng, Zhenyi; Li, Xiang; Wong, Kin; Wang, Yu; Klein, Jacques-Olivier; Khalili Amiri, Pedram; Zhang, Youguang; Wang, Kang L.; Zhao, Weisheng

2017-07-01

Beyond memory and storage, future logic applications put forward higher requirements for electronic devices. All spin logic devices (ASLDs) have drawn exceptional interest as they utilize pure spin current instead of charge current, which could promise ultra-low power consumption. However, relatively low efficiencies of spin injection, transport, and detection actually impede high-speed magnetization switching and challenge perspectives of ASLD. In this work, we study partial spin absorption induced magnetization switching in asymmetrical ASLD at the mesoscopic scale, in which the injector and detector have the nano-fabrication compatible device size (>100 nm) and their contact areas are different. The enlarged contact area of the detector is conducive to the spin current absorption, and the contact resistance difference between the injector and the detector can decrease the spin current backflow. Rigorous spin circuit modeling and micromagnetic simulations have been carried out to analyze the electrical and magnetic features. The results show that, at the fabrication-oriented technology scale, the ferromagnetic layer can hardly be switched by geometrically partial spin current absorption. The voltage-controlled magnetic anisotropy (VCMA) effect has been applied on the detector to accelerate the magnetization switching by modulating magnetic anisotropy of the ferromagnetic layer. With a relatively high VCMA coefficient measured experimentally, a voltage of 1.68 V can assist the whole magnetization switching within 2.8 ns. This analysis and improving approach will be of significance for future low-power, high-speed logic applications.

Preparation and characterization of bottom ferromagnetic electrode for graphene based magnetic junction

NASA Astrophysics Data System (ADS)

Cheng, Shufan; Cobas, Enrique; van't Erve, Olaf M. J.; Jonker, Berend T.

2016-03-01

Magnetic multilayer stacks incorporating several layers of graphene have been predicted to produce very high magnetoresistance and high conductivity, a combination of properties that would be useful in magnetic sensors and future spin-based data storage and processing technologies such as MRAM. To realize the theoretically modeled heterostructures and probe their properties, a clean, high-quality graphene-ferromagnet interface, such as one that results from CVD of graphene directly on ferromagnetic films, is required. However, past works using Ni and Co films for CVD of graphene employ the ferromagnetic film as a sacrificial layer to be dissolved after graphene growth and ignore changes to its morphology and magnetic properties. Here we investigated the effect of graphene CVD growth conditions on the properties of Co, Ni, Co90Fe10 and Ni80Fe20 ferromagnetic films. The magnetic films were grown by dc magnetron sputtering with different growth conditions onto c-Al2O3, Si/AlN and MgO substrates. The crystalline orientation, surface morphology/roughness and magnetic properties of the films were measured using X-ray diffraction, atomic force microscopy and vibrating sample magnetometry, respectively. Cobalt films grown at 500 °C were found to be hcp and heteroepitaxial on c-Al2O3. CoFe, Ni, and NiFe films on c-Al2O3 were found to be fcc and to be (111) textured but with grains having in-plane rotation differing by 60°. The CoFe and NiFe films on c-Al2O3 retained their small coercivity and high remanence while the pure Co and Ni films exhibited much smaller remanence after graphene growth, making them unsuitable for magnetic memory technologies. Films on Si/AlN were found to have the same rotational domains as those on sapphire c-Al2O3. The NiFe films on (111) MgO were found to be mostly single domain.

Bias-field equalizer for bubble memories

NASA Technical Reports Server (NTRS)

Keefe, G. E.

1977-01-01

Magnetoresistive Perm-alloy sensor monitors bias field required to maintain bubble memory. Sensor provides error signal that, in turn, corrects magnitude of bias field. Error signal from sensor can be used to control magnitude of bias field in either auxiliary set of bias-field coils around permanent magnet field, or current in small coils used to remagnetize permanent magnet by infrequent, short, high-current pulse or short sequence of pulses.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Felser, Claudia, E-mail: felser@cpfs.mpg.de; Wollmann, Lukas; Chadov, Stanislav

Heusler compounds are a remarkable class of materials with more than 1000 members and a wide range of extraordinary multi-functionalities including halfmetallic high-temperature ferri- and ferromagnets, multi-ferroics, shape memory alloys, and tunable topological insulators with a high potential for spintronics, energy technologies, and magneto-caloric applications. The tunability of this class of materials is exceptional and nearly every functionality can be designed. Co{sub 2}-Heusler compounds show high spin polarization in tunnel junction devices and spin-resolved photoemission. Manganese-rich Heusler compounds attract much interest in the context of spin transfer torque, spin Hall effect, and rare earth free hard magnets. Most Mn{sub 2}-Heuslermore » compounds crystallize in the inverse structure and are characterized by antiparallel coupling of magnetic moments on Mn atoms; the ferrimagnetic order and the lack of inversion symmetry lead to the emergence of new properties that are absent in ferromagnetic centrosymmetric Heusler structures, such as non-collinear magnetism, topological Hall effect, and skyrmions. Tetragonal Heusler compounds with large magneto crystalline anisotropy can be easily designed by positioning the Fermi energy at the van Hove singularity in one of the spin channels. Here, we give a comprehensive overview and a prospective on the magnetic properties of Heusler materials.« less

Properties of perpendicular-anisotropy magnetic tunnel junctions fabricated over the bottom electrode contact

NASA Astrophysics Data System (ADS)

Miura, Sadahiko; Honjo, Hiroaki; Kinoshita, Keizo; Tokutome, Keiichi; Koike, Hiroaki; Ikeda, Shoji; Endoh, Tetsuo; Ohno, Hideo

2015-04-01

Perpendicular-anisotropy magnetic tunnel junctions (MTJs) were prepared on four substrate geometries, i.e., directly on the axis of the bottom electrode contact, directly off the axis of the bottom electrode contact, on the axis of the bottom electrode contact with a polished bottom electrode, and off the axis of the bottom electrode contact with a polished bottom electrode. Electrical shorts were observed for direct on-axis geometry at a certain extent, whereas there were no electrical shorts for the other three geometries. The MR ratio/σR, JC0, and thermal stability factor of the devices for polish on-axis geometry were almost the same as those for polish off-axis geometry. From TEM observations of the polish on-axis device, the interface between the bottom contact and the base electrode was determined to be rough, whereas the MgO barrier layer was determined to be smooth, indicating that the polish process was effective for smooth magnetic tunnel junction fabrication over the bottom contact. MTJs for polish on-axis geometry eliminated the base electrode resistance and increased the magnetoresistance ratio. This technology contributes to the higher density of spin transfer torque magnetic random access memory.

A multilevel nonvolatile magnetoelectric memory

NASA Astrophysics Data System (ADS)

Shen, Jianxin; Cong, Junzhuang; Shang, Dashan; Chai, Yisheng; Shen, Shipeng; Zhai, Kun; Sun, Young

2016-09-01

The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade. Here we propose a new principle to realize a multilevel nonvolatile memory based on the multiple states of the magnetoelectric coefficient (α) of multiferroics. Because the states of α depends on the relative orientation between magnetization and polarization, one can reach different levels of α by controlling the ratio of up and down ferroelectric domains with external electric fields. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure confirm that the states of α can be well controlled between positive and negative by applying selective electric fields. Consequently, two-level, four-level, and eight-level nonvolatile memory devices are demonstrated at room temperature. This kind of multilevel magnetoelectric memory retains all the advantages of ferroelectric random access memory but overcomes the drawback of destructive reading of polarization. In contrast, the reading of α is nondestructive and highly efficient in a parallel way, with an independent reading coil shared by all the memory cells.

Review of optical memory technologies

NASA Technical Reports Server (NTRS)

Chen, D.

1972-01-01

Optical technologies for meeting the demands of large capacity fast access time memory are discussed in terms of optical phenomena and laser applications. The magneto-optic and electro-optic approaches are considered to be the most promising memory approaches.

Superconducting spin valves controlled by spiral re-orientation in B20-family magnets

NASA Astrophysics Data System (ADS)

Pugach, N. G.; Safonchik, M.; Champel, T.; Zhitomirsky, M. E.; Lähderanta, E.; Eschrig, M.; Lacroix, C.

2017-10-01

We propose a superconducting spin-triplet valve, which consists of a superconductor and an itinerant magnetic material, with the magnet showing an intrinsic non-collinear order characterized by a wave vector that may be aligned in a few equivalent preferred directions under the control of a weak external magnetic field. Re-orienting the spiral direction allows one to controllably modify long-range spin-triplet superconducting correlations, leading to spin-valve switching behavior. Our results indicate that the spin-valve effect may be noticeable. This bilayer may be used as a magnetic memory element for cryogenic nanoelectronics. It has the following advantages in comparison to superconducting spin valves proposed previously: (i) it contains only one magnetic layer, which may be more easily fabricated and controlled; (ii) its ground states are separated by a potential barrier, which solves the "half-select" problem of the addressed switch of memory elements.

Memories and NASA Spacecraft: A Description of Memories, Radiation Failure Modes, and System Design Considerations

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Ladbury, Ray; Oldhamm, Timothy

2010-01-01

As NASA has evolved it's usage of spaceflight computing, memory applications have followed as well. In this slide presentation, the history of NASA's memories from magnetic core and tape recorders to current semiconductor approaches is discussed. There is a brief description of current functional memory usage in NASA space systems followed by a description of potential radiation-induced failure modes along with considerations for reliable system design.

A variable-mode stator consequent pole memory machine

NASA Astrophysics Data System (ADS)

Yang, Hui; Lyu, Shukang; Lin, Heyun; Zhu, Z. Q.

2018-05-01

In this paper, a variable-mode concept is proposed for the speed range extension of a stator-consequent-pole memory machine (SCPMM). An integrated permanent magnet (PM) and electrically excited control scheme is utilized to simplify the flux-weakening control instead of relatively complicated continuous PM magnetization control. Due to the nature of memory machine, the magnetization state of low coercive force (LCF) magnets can be easily changed by applying either a positive or negative current pulse. Therefore, the number of PM poles may be changed to satisfy the specific performance requirement under different speed ranges, i.e. the machine with all PM poles can offer high torque output while that with half PM poles provides wide constant power range. In addition, the SCPMM with non-magnetized PMs can be considered as a dual-three phase electrically excited reluctance machine, which can be fed by an open-winding based dual inverters that provide direct current (DC) bias excitation to further extend the speed range. The effectiveness of the proposed variable-mode operation for extending its operating region and improving the system reliability is verified by both finite element analysis (FEA) and experiments.

Improved memory word line configuration allows high storage density

NASA Technical Reports Server (NTRS)

1966-01-01

Plated wire memory word drive line allows high storage density, good plated wire transmission and a simplified memory plane configuration. A half-turn word drive line with a magnetic keeper is used. The ground plane provides the return path for both the word current and the plated wire transmission line.

FMRI of visual working memory in high school football players.

PubMed

Shenk, Trey E; Robinson, Meghan E; Svaldi, Diana O; Abbas, Kausar; Breedlove, Katherine M; Leverenz, Larry J; Nauman, Eric A; Talavage, Thomas M

2015-01-01

Visual working memory deficits have been observed in at-risk athletes. This study uses a visual N-back working memory functional magnetic resonance imaging task to longitudinally assess asymptomatic football athletes for abnormal activity. Athletes were increasingly "flagged" as the season progressed. Flagging may provide early detection of injury.

Functional Imaging of Working Memory and Peripheral Endothelial Function in Middle-Aged Adults

ERIC Educational Resources Information Center

Gonzales, Mitzi M.; Tarumi, Takashi; Tanaka, Hirofumi; Sugawara, Jun; Swann-Sternberg, Tali; Goudarzi, Katayoon; Haley, Andreana P.

2010-01-01

The current study examined the relationship between a prognostic indicator of vascular health, flow-mediated dilation (FMD), and working memory-related brain activation in healthy middle-aged adults. Forty-two participants underwent functional magnetic resonance imaging while completing a 2-Back working memory task. Brachial artery…

Recognition Memory Is Impaired in Children after Prolonged Febrile Seizures

ERIC Educational Resources Information Center

Martinos, Marina M.; Yoong, Michael; Patil, Shekhar; Chin, Richard F. M.; Neville, Brian G.; Scott, Rod C.; de Haan, Michelle

2012-01-01

Children with a history of a prolonged febrile seizure show signs of acute hippocampal injury on magnetic resonance imaging. In addition, animal studies have shown that adult rats who suffered febrile seizures during development reveal memory impairments. Together, these lines of evidence suggest that memory impairments related to hippocampal…

Large reversible magnetocaloric effect in a Ni-Co-Mn-In magnetic shape memory alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, L.; Cong, D. Y.; Ma, L.

Reversibility of the magnetocaloric effect in materials with first-order magnetostructural transformation is of vital significance for practical magnetic refrigeration applications. Here, we report a large reversible magnetocaloric effect in a Ni49.8Co1.2Mn33.5In15.5 magnetic shape memory alloy. A large reversible magnetic entropy change of 14.6 J/(kg K) and a broad operating temperature window of 18 K under 5 T were simultaneously achieved, correlated with the low thermal hysteresis (-8 K) and large magnetic-field-induced shift of transformation temperatures (4.9 K/T) that lead to a narrow magnetic hysteresis (1.1 T) and small average magnetic hysteresis loss (48.4 J/kg under 5 T) as well. Furthermore,more » a large reversible effective refrigeration capacity (76.6 J/kg under 5 T) was obtained, as a result of the large reversible magnetic entropy change, broad operating temperature window, and small magnetic hysteresis loss. The large reversible magnetic entropy change and large reversible effective refrigeration capacity are important for improving the magnetocaloric performance, and the small magnetic hysteresis loss is beneficial to reducing energy dissipation during magnetic field cycle in potential applications.« less

Memory reactivation during rapid eye movement sleep promotes its generalization and integration in cortical stores.

PubMed

Sterpenich, Virginie; Schmidt, Christina; Albouy, Geneviève; Matarazzo, Luca; Vanhaudenhuyse, Audrey; Boveroux, Pierre; Degueldre, Christian; Leclercq, Yves; Balteau, Evelyne; Collette, Fabienne; Luxen, André; Phillips, Christophe; Maquet, Pierre

2014-06-01

Memory reactivation appears to be a fundamental process in memory consolidation. In this study we tested the influence of memory reactivation during rapid eye movement (REM) sleep on memory performance and brain responses at retrieval in healthy human participants. Fifty-six healthy subjects (28 women and 28 men, age [mean ± standard deviation]: 21.6 ± 2.2 y) participated in this functional magnetic resonance imaging (fMRI) study. Auditory cues were associated with pictures of faces during their encoding. These memory cues delivered during REM sleep enhanced subsequent accurate recollections but also false recognitions. These results suggest that reactivated memories interacted with semantically related representations, and induced new creative associations, which subsequently reduced the distinction between new and previously encoded exemplars. Cues had no effect if presented during stage 2 sleep, or if they were not associated with faces during encoding. Functional magnetic resonance imaging revealed that following exposure to conditioned cues during REM sleep, responses to faces during retrieval were enhanced both in a visual area and in a cortical region of multisensory (auditory-visual) convergence. These results show that reactivating memories during REM sleep enhances cortical responses during retrieval, suggesting the integration of recent memories within cortical circuits, favoring the generalization and schematization of the information.

Entanglement distribution schemes employing coherent photon-to-spin conversion in semiconductor quantum dot circuits

NASA Astrophysics Data System (ADS)

Gaudreau, Louis; Bogan, Alex; Korkusinski, Marek; Studenikin, Sergei; Austing, D. Guy; Sachrajda, Andrew S.

2017-09-01

Long distance entanglement distribution is an important problem for quantum information technologies to solve. Current optical schemes are known to have fundamental limitations. A coherent photon-to-spin interface built with quantum dots (QDs) in a direct bandgap semiconductor can provide a solution for efficient entanglement distribution. QD circuits offer integrated spin processing for full Bell state measurement (BSM) analysis and spin quantum memory. Crucially the photo-generated spins can be heralded by non-destructive charge detection techniques. We review current schemes to transfer a polarization-encoded state or a time-bin-encoded state of a photon to the state of a spin in a QD. The spin may be that of an electron or that of a hole. We describe adaptations of the original schemes to employ heavy holes which have a number of attractive properties including a g-factor that is tunable to zero for QDs in an appropriately oriented external magnetic field. We also introduce simple throughput scaling models to demonstrate the potential performance advantage of full BSM capability in a QD scheme, even when the quantum memory is imperfect, over optical schemes relying on linear optical elements and ensemble quantum memories.

Evaluation of Magnetoresistive RAM for Space Applications

NASA Technical Reports Server (NTRS)

Heidecker, Jason

2014-01-01

Magnetoresistive random-access memory (MRAM) is a non-volatile memory that exploits electronic spin, rather than charge, to store data. Instead of moving charge on and off a floating gate to alter the threshold voltage of a CMOS transistor (creating different bit states), MRAM uses magnetic fields to flip the polarization of a ferromagnetic material thus switching its resistance and bit state. These polarized states are immune to radiation-induced upset, thus making MRAM very attractive for space application. These magnetic memory elements also have infinite data retention and erase/program endurance. Presented here are results of reliability testing of two space-qualified MRAM products from Aeroflex and Honeywell.

Examining the Efficacy of the Modified Story Memory Technique (mSMT) in Persons With TBI Using Functional Magnetic Resonance Imaging (fMRI): The TBI-MEM Trial.

PubMed

Chiaravalloti, Nancy D; Dobryakova, Ekaterina; Wylie, Glenn R; DeLuca, John

2015-01-01

New learning and memory deficits are common following traumatic brain injury (TBI). Yet few studies have examined the efficacy of memory retraining in TBI through the most methodologically vigorous randomized clinical trial. Our previous research has demonstrated that the modified Story Memory Technique (mSMT) significantly improves new learning and memory in multiple sclerosis. The present double-blind, placebo-controlled, randomized clinical trial examined changes in cerebral activation on functional magnetic resonance imaging following mSMT treatment in persons with TBI. Eighteen individuals with TBI were randomly assigned to treatment (n = 9) or placebo (n = 9) groups. Baseline and follow-up functional magnetic resonance imaging was collected during a list-learning task. Significant differences in cerebral activation from before to after treatment were noted in regions belonging to the default mode network and executive control network in the treatment group only. Results are interpreted in light of these networks. Activation differences between the groups likely reflect increased use of strategies taught during treatment. This study demonstrates a significant change in cerebral activation resulting from the mSMT in a TBI sample. Findings are consistent with previous work in multiple sclerosis. Behavioral interventions can show significant changes in the brain, validating clinical utility.

Effect of chronic and acute low-frequency repetitive transcranial magnetic stimulation on spatial memory in rats.

PubMed

Li, Wei; Yang, Yuye; Ye, Qing; Yang, Bo; Wang, Zhengrong

2007-03-15

Repetitive transcranial magnetic stimulation (rTMS) is a novel, non-invasive neurological and psychiatric tool. The low-frequency (1 Hz or less) rTMS is likely to play a particular role in its mechanism of action with different effects in comparison with high-frequency (>1 Hz) rTMS. There is limited information regarding the effect of low-frequency rTMS on spatial memory. In our study, each male Wistar rat was daily given 300 stimuli (1.0 T, 200 micros) at a rate of 0.5 Hz or sham stimulation. We investigated the effects of chronic and acute rTMS on reference/working memory process in Morris water maze test with the hypothesis that the effect would differ by chronic or acute condition. Chronic low-frequency rTMS impaired the retrieval of spatial short- and long-term spatial reference memory but not acquisition process and working memory, whereas acute low-frequency rTMS predominantly induced no deficits in acquisition or short-term spatial reference memory as well as working memory except for long-term reference memory. In summary, chronic 0.5 Hz rTMS disrupts spatial short- and long-term reference memory function, but acute rTMS differently affects reference memory. Chronic low-frequency rTMS may be used to modulate reference memory. Treatment protocols using low-frequency rTMS in neurological and psychiatric disorders need to take into account the potential effect of chronic low-frequency rTMS on memory and other cognitive functions.

Glassy behavior of diluted Cu-Zn ferrites

NASA Astrophysics Data System (ADS)

Akhter, Shahida; Hakim, M. A.; Hoque, S. M.; Mathieu, R.; Nordblad, P.

2018-04-01

The magnetic behavior of Zn substituted Cu-Zn spinel ferrites having chemical formula Cu1-xZnxFe2O4 (x = 0.7, 0.8, 0.9 and 1.0) has been studied by SQUID magnetometry, by means of magnetic hysteresis, field-cooled (FC) and zero-field-cooled (ZFC) magnetization, memory effect and low field ac susceptibility measurements. These measurements suggest that the ferrimagnetic phase of the x ≤ 0.8 samples is gradually turned into a spin glass (x ≥ 0.9). The compound with x = 0.9 exhibits the typical dynamical behavior of spin glasses, with indication of aging, rejuvenation and memory effects. The evolution of the magnetic properties of Cu-Zn spinel ferrites with substitution of Zn for Cu is discussed.

Coping with Memory Loss

MedlinePlus

... either using computerized axial tomography (CAT) scans or magnetic resonance imaging (MRI) – can help to identify strokes and tumors, which can sometimes cause memory loss. “The goal is to rule out factors ...

Strain-induced macroscopic magnetic anisotropy from smectic liquid-crystalline elastomer-maghemite nanoparticle hybrid nanocomposites.

PubMed

Haberl, Johannes M; Sánchez-Ferrer, Antoni; Mihut, Adriana M; Dietsch, Hervé; Hirt, Ann M; Mezzenga, Raffaele

2013-06-21

We combine tensile strength analysis and X-ray scattering experiments to establish a detailed understanding of the microstructural coupling between liquid-crystalline elastomer (LCE) networks and embedded magnetic core-shell ellipsoidal nanoparticles (NPs). We study the structural and magnetic re-organization at different deformations and NP loadings, and the associated shape and magnetic memory features. In the quantitative analysis of a stretching process, the effect of the incorporated NPs on the smectic LCE is found to be prominent during the reorientation of the smectic domains and the softening of the nanocomposite. Under deformation, the soft response of the nanocomposite material allows the organization of the nanoparticles to yield a permanent macroscopically anisotropic magnetic material. Independent of the particle loading, the shape-memory properties and the smectic phase of the LCEs are preserved. Detailed studies on the magnetic properties demonstrate that the collective ensemble of individual particles is responsible for the macroscopic magnetic features of the nanocomposite.

Large magnetic entropy change and magnetoresistance in a Ni 41Co 9Mn 40Sn 10 magnetic shape memory alloy

DOE PAGES

Huang, L.; Cong, D. Y.; Ma, L.; ...

2015-07-02

A polycrystalline Ni 41Co 9Mn 40Sn 10 (at. %) magnetic shape memory alloy was prepared by arc melting and characterized mainly by magnetic measurements, in-situ high-energy X-ray diffraction (HEXRD), and mechanical testing. A large magnetoresistance of 53.8% (under 5 T) and a large magnetic entropy change of 31.9 J/(kg K) (under 5 T) were simultaneously achieved. Both of these values are among the highest values reported so far in Ni-Mn-Sn-based Heusler alloys. The large magnetic entropy change, closely related to the structural entropy change, is attributed to the large unit cell volume change across martensitic transformation as revealed by ourmore » in-situ HEXRD experiment. Furthermore, good compressive properties were also obtained. Lastly, the combination of large magnetoresistance, large magnetic entropy change, and good compressive properties, as well as low cost makes this alloy a promising candidate for multifunctional applications.« less

Magnetic Properties of the Ferromagnetic Shape Memory Alloys Ni50+xMn27−xGa23 in Magnetic Fields

PubMed Central

Sakon, Takuo; Otsuka, Kohei; Matsubayashi, Junpei; Watanabe, Yuushi; Nishihara, Hironori; Sasaki, Kenta; Yamashita, Satoshi; Umetsu, Rie Y.; Nojiri, Hiroyuki; Kanomata, Takeshi

2014-01-01

Thermal strain, permeability, and magnetization measurements of the ferromagnetic shape memory alloys Ni50+xMn27−xGa23 (x = 2.0, 2.5, 2.7) were performed. For x = 2.7, in which the martensite transition and the ferromagnetic transition occur at the same temperature, the martensite transition starting temperature TMs shift in magnetic fields around a zero magnetic field was estimated to be dTMs/dB = 1.1 ± 0.2 K/T, thus indicating that magnetic fields influences martensite transition. We discussed the itinerant electron magnetism of x = 2.0 and 2.5. As for x = 2.5, the M4 vs. B/M plot crosses the origin of the coordinate axis at the Curie temperature, and the plot indicates a good linear relation behavior around the Curie temperature. The result is in agreement with the theory by Takahashi, concerning itinerant electron ferromagnets. PMID:28788645

Developmental amnesia associated with early hypoxic-ischaemic injury.

PubMed

Gadian, D G; Aicardi, J; Watkins, K E; Porter, D A; Mishkin, M; Vargha-Khadem, F

2000-03-01

We recently reported on three young patients with severe impairments of episodic memory resulting from brain injury sustained early in life. These findings have led us to hypothesize that such impairments might be a previously unrecognized consequence of perinatal hypoxic-ischaemic injury. Neuropsychological and quantitative magnetic resonance investigations were carried out on five young patients, all of whom had suffered hypoxic-ischaemic episodes at or shortly after birth. All five patients showed severe impairments of episodic memory (memory for events), with relative preservation of semantic memory (memory for facts). However, none had any of the major neurological deficits that are typically associated with hypoxic-ischaemic injury, and all attended mainstream schools. Quantitative magnetic resonance investigations revealed severe bilateral hippocampal atrophy in all cases. As a group, the patients also showed bilateral reductions in grey matter in the regions of the putamen and the ventral part of the thalamus. On the basis of their clinical histories and the pattern of magnetic resonance findings, we attribute the patients' pathology and associated memory impairments primarily to hypoxic-ischaemic episodes sustained very early in life. We suggest that the degree of hypoxia-ischaemia was sufficient to produce selective damage to particularly vulnerable regions of the brain, notably the hippocampi, but was not sufficient to result in the more severe neurological and cognitive deficits that can follow hypoxic-ischaemic injury. The impairments in episodic memory may be difficult to recognize, particularly in early childhood, but this developmental amnesia can have debilitating consequences, both at home and at school, and may preclude independent life in adulthood.

A novel perovskite oxide chemically designed to show multiferroic phase boundary with room-temperature magnetoelectricity

NASA Astrophysics Data System (ADS)

Fernández-Posada, Carmen M.; Castro, Alicia; Kiat, Jean-Michel; Porcher, Florence; Peña, Octavio; Algueró, Miguel; Amorín, Harvey

2016-09-01

There is a growing activity in the search of novel single-phase multiferroics that could finally provide distinctive magnetoelectric responses at room temperature, for they would enable a range of potentially disruptive technologies, making use of the ability of controlling polarization with a magnetic field or magnetism with an electric one (for example, voltage-tunable spintronic devices, uncooled magnetic sensors and the long-searched magnetoelectric memory). A very promising novel material concept could be to make use of phase-change phenomena at structural instabilities of a multiferroic state. Indeed, large phase-change magnetoelectric response has been anticipated by a first-principles investigation of the perovskite BiFeO3-BiCoO3 solid solution, specifically at its morphotropic phase boundary between multiferroic polymorphs of rhombohedral and tetragonal symmetries. Here, we report a novel perovskite oxide that belongs to the BiFeO3-BiMnO3-PbTiO3 ternary system, chemically designed to present such multiferroic phase boundary with enhanced ferroelectricity and canted ferromagnetism, which shows distinctive room-temperature magnetoelectric responses.

A novel perovskite oxide chemically designed to show multiferroic phase boundary with room-temperature magnetoelectricity.

PubMed

Fernández-Posada, Carmen M; Castro, Alicia; Kiat, Jean-Michel; Porcher, Florence; Peña, Octavio; Algueró, Miguel; Amorín, Harvey

2016-09-28

There is a growing activity in the search of novel single-phase multiferroics that could finally provide distinctive magnetoelectric responses at room temperature, for they would enable a range of potentially disruptive technologies, making use of the ability of controlling polarization with a magnetic field or magnetism with an electric one (for example, voltage-tunable spintronic devices, uncooled magnetic sensors and the long-searched magnetoelectric memory). A very promising novel material concept could be to make use of phase-change phenomena at structural instabilities of a multiferroic state. Indeed, large phase-change magnetoelectric response has been anticipated by a first-principles investigation of the perovskite BiFeO 3 -BiCoO 3 solid solution, specifically at its morphotropic phase boundary between multiferroic polymorphs of rhombohedral and tetragonal symmetries. Here, we report a novel perovskite oxide that belongs to the BiFeO 3 -BiMnO 3 -PbTiO 3 ternary system, chemically designed to present such multiferroic phase boundary with enhanced ferroelectricity and canted ferromagnetism, which shows distinctive room-temperature magnetoelectric responses.

Trend of tunnel magnetoresistance and variation in threshold voltage for keeping data load robustness of metal–oxide–semiconductor/magnetic tunnel junction hybrid latches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ohsawa, T.; Ikeda, S.; Hanyu, T.

The robustness of data load of metal–oxide–semiconductor/magnetic tunnel junction (MOS/MTJ) hybrid latches at power-on is examined by using Monte Carlo simulation with the variations in magnetoresistances for MTJs and in threshold voltages for MOSFETs involved in 90 nm technology node. Three differential pair type spin-transfer-torque-magnetic random access memory cells (4T2MTJ, 6T2MTJ, and 8T2MTJ) are compared for their successful data load at power-on. It is found that the 4T2MTJ cell has the largest pass area in the shmoo plot in TMR ratio (tunnel magnetoresistance ratio) and V{sub dd} in which a whole 256 kb cell array can be powered-on successfully. The minimum TMRmore » ratio for the 4T2MTJ in 0.9 V < V{sub dd} < 1.9 V is 140%, while the 6T2MTJ and the 8T2MTJ cells require TMR ratio larger than 170%.« less

Heat switch technology for cryogenic thermal management

NASA Astrophysics Data System (ADS)

Shu, Q. S.; Demko, J. A.; E Fesmire, J.

2017-12-01

Systematic review is given of development of novel heat switches at cryogenic temperatures that alternatively provide high thermal connection or ideal thermal isolation to the cold mass. These cryogenic heat switches are widely applied in a variety of unique superconducting systems and critical space applications. The following types of heat switch devices are discussed: 1) magnetic levitation suspension, 2) shape memory alloys, 3) differential thermal expansion, 4) helium or hydrogen gap-gap, 5) superconducting, 6) piezoelectric, 7) cryogenic diode, 8) magneto-resistive, and 9) mechanical demountable connections. Advantages and limitations of different cryogenic heat switches are examined along with the outlook for future thermal management solutions in materials and cryogenic designs.

The positive effects of high-frequency right dorsolateral prefrontal cortex repetitive transcranial magnetic stimulation on memory, correlated with increases in brain metabolites detected by proton magnetic resonance spectroscopy in recently detoxified alcohol-dependent patients.

PubMed

Qiao, Jun; Jin, Guixing; Lei, Licun; Wang, Lan; Du, Yaqiang; Wang, Xueyi

2016-01-01

To explore the effect of right dorsolateral prefrontal cortex (DLPFC) repetitive transcranial magnetic stimulation (rTMS) on memory, and its correlation with levels of hippocampal brain metabolites detected by proton magnetic resonance spectroscopy ( 1 H-MRS) in recently detoxified alcohol-dependent patients. In this randomized, double-blind sham-controlled trial, alcohol-dependent patients were enrolled and randomized into two groups: the experimental group (rTMS, 10 Hz, on right DLPFC, 20 sessions) and the control group (sham stimulation). Memory function was assessed using Hopkins Verbal Learning Test-Revised (HVLT-R) and Brief Visuospatial Memory Test-Revised (BVMT-R) before and after treatment. 1 H-MRS was used to detect the levels of N -acetyl aspartic acid (NAA), choline (Cho), and creatine (Cr) in bilateral hippocampi before and after treatment. Thirty-eight patients (18 in the experimental group and 20 in the control group) were included in the analyses. The experimental group showed significantly greater changes in HVLT-R, BVMT-R, NAA/Cr, and Cho/Cr after rTMS from baseline than the control group. The percentage change in BVMT-R and HVLT-R correlated with the percentage change in NAA/Cr and Cho/Cr in the right brain. High-frequency right DLPFC rTMS was associated with improvement in memory dysfunction, which is correlated with levels of hippocampal brain metabolites detected by 1 H-MRS in recently detoxified alcohol-dependent patients.

Implementation of Ferroelectric Memories for Space Applications

NASA Technical Reports Server (NTRS)

Philpy, Stephen C.; Derbenwick, Gary F.; Kamp, David A.; Isaacson, Alan F.

2000-01-01

Ferroelectric random access semiconductor memories (FeRAMs) are an ideal nonvolatile solution for space applications. These memories have low power performance, high endurance and fast write times. By combining commercial ferroelectric memory technology with radiation hardened CMOS technology, nonvolatile semiconductor memories for space applications can be attained. Of the few radiation hardened semiconductor manufacturers, none have embraced the development of radiation hardened FeRAMs, due a limited commercial space market and funding limitations. Government funding may be necessary to assure the development of radiation hardened ferroelectric memories for space applications.

Physical principles and current status of emerging non-volatile solid state memories

NASA Astrophysics Data System (ADS)

Wang, L.; Yang, C.-H.; Wen, J.

2015-07-01

Today the influence of non-volatile solid-state memories on persons' lives has become more prominent because of their non-volatility, low data latency, and high robustness. As a pioneering technology that is representative of non-volatile solidstate memories, flash memory has recently seen widespread application in many areas ranging from electronic appliances, such as cell phones and digital cameras, to external storage devices such as universal serial bus (USB) memory. Moreover, owing to its large storage capacity, it is expected that in the near future, flash memory will replace hard-disk drives as a dominant technology in the mass storage market, especially because of recently emerging solid-state drives. However, the rapid growth of the global digital data has led to the need for flash memories to have larger storage capacity, thus requiring a further downscaling of the cell size. Such a miniaturization is expected to be extremely difficult because of the well-known scaling limit of flash memories. It is therefore necessary to either explore innovative technologies that can extend the areal density of flash memories beyond the scaling limits, or to vigorously develop alternative non-volatile solid-state memories including ferroelectric random-access memory, magnetoresistive random-access memory, phase-change random-access memory, and resistive random-access memory. In this paper, we review the physical principles of flash memories and their technical challenges that affect our ability to enhance the storage capacity. We then present a detailed discussion of novel technologies that can extend the storage density of flash memories beyond the commonly accepted limits. In each case, we subsequently discuss the physical principles of these new types of non-volatile solid-state memories as well as their respective merits and weakness when utilized for data storage applications. Finally, we predict the future prospects for the aforementioned solid-state memories for the next generation of data-storage devices based on a comparison of their performance. [Figure not available: see fulltext.

Technology and Reflection: Mood and Memory Mechanisms for Well-Being.

PubMed

Konrad, Artie; Tucker, Simon; Crane, John; Whittaker, Steve

We report a psychologically motivated intervention to explore Technology Mediated Reflection (TMR), the process of systematically reviewing rich digital records of past personal experiences. Although TMR benefits well-being, and is increasingly being deployed, we know little about how one's mood when using TMR influences these benefits. We use theories of memory and emotion-regulation to motivate hypotheses about the relationship between reflection, mood, and well-being when using technology. We test these hypotheses in a large-scale month long real world deployment using a web-based application, MoodAdaptor. MoodAdaptor prompted participants to reflect on positive or negative memories depending on current mood. We evaluated how mood and memory interact during written reflection and measured effects on well-being. We analyzed qualitative and quantitative data from 128 participants who generated 11157 mood evaluations, 5051 logfiles, 256 surveys, and 20 interviews. TMR regulated emotion; when participants reflected on memories with valences opposite to their current mood, their mood became more neutral. However this did not impact overall well-being. Our findings also clarify underlying TMR mechanisms. Moods and memories competed with each other; when positive moods prevailed over negative memories, people demonstrated classic mechanisms shown in prior work to influence well-being. When negative moods prevailed over positive memories, memories became negatively tainted. Our results have implications for new well-being interventions and technologies that capitalize on the interconnectedness of memory and emotion.

Soft-error tolerance and energy consumption evaluation of embedded computer with magnetic random access memory in practical systems using computer simulations

NASA Astrophysics Data System (ADS)

Nebashi, Ryusuke; Sakimura, Noboru; Sugibayashi, Tadahiko

2017-08-01

We evaluated the soft-error tolerance and energy consumption of an embedded computer with magnetic random access memory (MRAM) using two computer simulators. One is a central processing unit (CPU) simulator of a typical embedded computer system. We simulated the radiation-induced single-event-upset (SEU) probability in a spin-transfer-torque MRAM cell and also the failure rate of a typical embedded computer due to its main memory SEU error. The other is a delay tolerant network (DTN) system simulator. It simulates the power dissipation of wireless sensor network nodes of the system using a revised CPU simulator and a network simulator. We demonstrated that the SEU effect on the embedded computer with 1 Gbit MRAM-based working memory is less than 1 failure in time (FIT). We also demonstrated that the energy consumption of the DTN sensor node with MRAM-based working memory can be reduced to 1/11. These results indicate that MRAM-based working memory enhances the disaster tolerance of embedded computers.

Evaluation of reinitialization-free nonvolatile computer systems for energy-harvesting Internet of things applications

NASA Astrophysics Data System (ADS)

Onizawa, Naoya; Tamakoshi, Akira; Hanyu, Takahiro

2017-08-01

In this paper, reinitialization-free nonvolatile computer systems are designed and evaluated for energy-harvesting Internet of things (IoT) applications. In energy-harvesting applications, as power supplies generated from renewable power sources cause frequent power failures, data processed need to be backed up when power failures occur. Unless data are safely backed up before power supplies diminish, reinitialization processes are required when power supplies are recovered, which results in low energy efficiencies and slow operations. Using nonvolatile devices in processors and memories can realize a faster backup than a conventional volatile computer system, leading to a higher energy efficiency. To evaluate the energy efficiency upon frequent power failures, typical computer systems including processors and memories are designed using 90 nm CMOS or CMOS/magnetic tunnel junction (MTJ) technologies. Nonvolatile ARM Cortex-M0 processors with 4 kB MRAMs are evaluated using a typical computing benchmark program, Dhrystone, which shows a few order-of-magnitude reductions in energy in comparison with a volatile processor with SRAM.

A Virtual Radial Arm Maze for the Study of Multiple Memory Systems in a Functional Magnetic Resonance Imaging Environment

PubMed Central

Xu, Dongrong; Hao, Xuejun; Wang, Zhishun; Duan, Yunsuo; Liu, Feng; Marsh, Rachel; Yu, Shan; Peterson, Bradley S.

2015-01-01

An increasing number of functional brain imaging studies are employing computer-based virtual reality (VR) to study changes in brain activity during the performance of high-level psychological and cognitive tasks. We report the development of a VR radial arm maze that adapts for human use in a scanning environment with the same general experimental design of behavioral tasks as that has been used with remarkable effectiveness for the study of multiple memory systems in rodents. The software platform is independent of specific computer hardware and operating systems, as we aim to provide shared access to this technology by the research community. We hope that doing so will provide greater standardization of software platform and study paradigm that will reduce variability and improve the comparability of findings across studies. We report the details of the design and implementation of this platform and provide information for downloading of the system for demonstration and research applications. PMID:26366052

Memories for life: a review of the science and technology

PubMed Central

O'Hara, Kieron; Morris, Richard; Shadbolt, Nigel; Hitch, Graham J; Hall, Wendy; Beagrie, Neil

2006-01-01

This paper discusses scientific, social and technological aspects of memory. Recent developments in our understanding of memory processes and mechanisms, and their digital implementation, have placed the encoding, storage, management and retrieval of information at the forefront of several fields of research. At the same time, the divisions between the biological, physical and the digital worlds seem to be dissolving. Hence, opportunities for interdisciplinary research into memory are being created, between the life sciences, social sciences and physical sciences. Such research may benefit from immediate application into information management technology as a testbed. The paper describes one initiative, memories for life, as a potential common problem space for the various interested disciplines. PMID:16849265

Interactions and reversal-field memory in complex magnetic nanowire arrays

NASA Astrophysics Data System (ADS)

Rotaru, Aurelian; Lim, Jin-Hee; Lenormand, Denny; Diaconu, Andrei; Wiley, John. B.; Postolache, Petronel; Stancu, Alexandru; Spinu, Leonard

2011-10-01

Interactions and magnetization reversal of Ni nanowire arrays have been investigated by the first-order reversal curve (FORC) method. Several series of samples with controlled spatial distribution were considered including simple wires of different lengths and diameters (70 and 110 nm) and complex wires with a single modulated diameter along their length. Subtle features of magnetic interactions are revealed through a quantitative analysis of the local interaction field profile distributions obtained from the FORC method. In addition, the FORC analysis indicates that the nanowire systems with a mean diameter of 70 nm appear to be organized in symmetric clusters indicative of a reversal-field memory effect.

Long lifetime and high-fidelity quantum memory of photonic polarization qubit by lifting zeeman degeneracy.

PubMed

Xu, Zhongxiao; Wu, Yuelong; Tian, Long; Chen, Lirong; Zhang, Zhiying; Yan, Zhihui; Li, Shujing; Wang, Hai; Xie, Changde; Peng, Kunchi

2013-12-13

Long-lived and high-fidelity memory for a photonic polarization qubit (PPQ) is crucial for constructing quantum networks. We present a millisecond storage system based on electromagnetically induced transparency, in which a moderate magnetic field is applied on a cold-atom cloud to lift Zeeman degeneracy and, thus, the PPQ states are stored as two magnetic-field-insensitive spin waves. Especially, the influence of magnetic-field-sensitive spin waves on the storage performances is almost totally avoided. The measured average fidelities of the polarization states are 98.6% at 200  μs and 78.4% at 4.5 ms, respectively.

Field driven magnetic racetrack memory accompanied with the interfacial Dzyaloshinskii-Moriya interaction

NASA Astrophysics Data System (ADS)

Kim, June-Seo; Lee, Hyeon-Jun; Hong, Jung-Il; You, Chun-Yeol

2018-06-01

The in-plane magnetic field pulse driven domain wall motion on a perpendicularly magnetized nanowire is numerically investigated by performing micromagnetic simulations and magnetic domain wall dynamics are evaluated analytically with one-dimensional collective coordinate models including the interfacial Dzyaloshinskii-Moriya interaction. With the action of the precession torque, the chirality and the magnetic field direction dependent displacements of the magnetic domain walls are clearly observed. In order to move Bloch type and Neel type domain walls, a longitudinal and a transverse in-plane magnetic field pulse are required, respectively. The domain wall type (Bloch or Neel) can easily be determined by the dynamic motion of the domain walls under the applied pulse fields. By applying a temporally asymmetric in-plane field pulse and successive notches in the perpendicularly magnetized nanowire strip line with a proper interval, the concept of racetrack memory based on the synchronous displacements of the chirality dependent multiple domain walls is verified to be feasible. Requirement of multiple domain walls with homogeneous chirality is achieved with the help of Dzyaloshinskii-Moriya interaction.

A Survey Of Architectural Approaches for Managing Embedded DRAM and Non-volatile On-chip Caches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mittal, Sparsh; Vetter, Jeffrey S; Li, Dong

Recent trends of CMOS scaling and increasing number of on-chip cores have led to a large increase in the size of on-chip caches. Since SRAM has low density and consumes large amount of leakage power, its use in designing on-chip caches has become more challenging. To address this issue, researchers are exploring the use of several emerging memory technologies, such as embedded DRAM, spin transfer torque RAM, resistive RAM, phase change RAM and domain wall memory. In this paper, we survey the architectural approaches proposed for designing memory systems and, specifically, caches with these emerging memory technologies. To highlight theirmore » similarities and differences, we present a classification of these technologies and architectural approaches based on their key characteristics. We also briefly summarize the challenges in using these technologies for architecting caches. We believe that this survey will help the readers gain insights into the emerging memory device technologies, and their potential use in designing future computing systems.« less

Functional Magnetic Resonance Imaging Correlates of First-Episode Psychoses during Attentional and Memory Task Performance.

PubMed

Del Casale, Antonio; Kotzalidis, Georgios D; Rapinesi, Chiara; Sorice, Serena; Girardi, Nicoletta; Ferracuti, Stefano; Girardi, Paolo

2016-01-01

The nature of the alteration of the response to cognitive tasks in first-episode psychosis (FEP) still awaits clarification. We used activation likelihood estimation, an increasingly used method in evaluating normal and pathological brain function, to identify activation changes in functional magnetic resonance imaging (fMRI) studies of FEP during attentional and memory tasks. We included 11 peer-reviewed fMRI studies assessing FEP patients versus healthy controls (HCs) during performance of attentional and memory tasks. Our database comprised 290 patients with FEP, matched with 316 HCs. Between-group analyses showed that HCs, compared to FEP patients, exhibited hyperactivation of the right middle frontal gyrus (Brodmann area, BA, 9), right inferior parietal lobule (BA 40), and right insula (BA 13) during attentional task performances and hyperactivation of the left insula (BA 13) during memory task performances. Right frontal, parietal, and insular dysfunction during attentional task performance and left insular dysfunction during memory task performance are significant neural functional FEP correlates. © 2016 S. Karger AG, Basel.

Memory engram storage and retrieval.

PubMed

Tonegawa, Susumu; Pignatelli, Michele; Roy, Dheeraj S; Ryan, Tomás J

2015-12-01

A great deal of experimental investment is directed towards questions regarding the mechanisms of memory storage. Such studies have traditionally been restricted to investigation of the anatomical structures, physiological processes, and molecular pathways necessary for the capacity of memory storage, and have avoided the question of how individual memories are stored in the brain. Memory engram technology allows the labeling and subsequent manipulation of components of specific memory engrams in particular brain regions, and it has been established that cell ensembles labeled by this method are both sufficient and necessary for memory recall. Recent research has employed this technology to probe fundamental questions of memory consolidation, differentiating between mechanisms of memory retrieval from the true neurobiology of memory storage. Copyright © 2015 The Authors. Published by Elsevier Ltd.. All rights reserved.

Artificial cognitive memory—changing from density driven to functionality driven

NASA Astrophysics Data System (ADS)

Shi, L. P.; Yi, K. J.; Ramanathan, K.; Zhao, R.; Ning, N.; Ding, D.; Chong, T. C.

2011-03-01

Increasing density based on bit size reduction is currently a main driving force for the development of data storage technologies. However, it is expected that all of the current available storage technologies might approach their physical limits in around 15 to 20 years due to miniaturization. To further advance the storage technologies, it is required to explore a new development trend that is different from density driven. One possible direction is to derive insights from biological counterparts. Unlike physical memories that have a single function of data storage, human memory is versatile. It contributes to functions of data storage, information processing, and most importantly, cognitive functions such as adaptation, learning, perception, knowledge generation, etc. In this paper, a brief review of current data storage technologies are presented, followed by discussions of future storage technology development trend. We expect that the driving force will evolve from density to functionality, and new memory modules associated with additional functions other than only data storage will appear. As an initial step toward building a future generation memory technology, we propose Artificial Cognitive Memory (ACM), a memory based intelligent system. We also present the characteristics of ACM, new technologies that can be used to develop ACM components such as bioinspired element cells (silicon, memristor, phase change, etc.), and possible methodologies to construct a biologically inspired hierarchical system.

The efficacy of cognitive prosthetic technology for people with memory impairments: a systematic review and meta-analysis.

PubMed

Jamieson, Matthew; Cullen, Breda; McGee-Lennon, Marilyn; Brewster, Stephen; Evans, Jonathan J

2014-01-01

Technology can compensate for memory impairment. The efficacy of assistive technology for people with memory difficulties and the methodology of selected studies are assessed. A systematic search was performed and all studies that investigated the impact of technology on memory performance for adults with impaired memory resulting from acquired brain injury (ABI) or a degenerative disease were included. Two 10-point scales were used to compare each study to an ideally reported single case experimental design (SCED) study (SCED scale; Tate et al., 2008 ) or randomised control group study (PEDro-P scale; Maher, Sherrington, Herbert, Moseley, & Elkins, 2003 ). Thirty-two SCED (mean = 5.9 on the SCED scale) and 11 group studies (mean = 4.45 on the PEDro-P scale) were found. Baseline and intervention performance for each participant in the SCED studies was re-calculated using non-overlap of all pairs (Parker & Vannest, 2009 ) giving a mean score of 0.85 on a 0 to 1 scale (17 studies, n = 36). A meta-analysis of the efficacy of technology vs. control in seven group studies gave a large effect size (d = 1.27) (n = 147). It was concluded that prosthetic technology can improve performance on everyday tasks requiring memory. There is a specific need for investigations of technology for people with degenerative diseases.

A graphite based STT-RAM cell with reduction in switching current

NASA Astrophysics Data System (ADS)

Varghani, Ali; Peiravi, Ali

2015-10-01

Spin Transfer Torque Random Access Memory (STT-RAM) is a serious candidate for "universal memory" because of its non-volatility, fast access time, high density, good scalability, high endurance and relatively low power dissipation. However, problems with low write speed and large write current are important existing challenges in STT-RAM design and there is a tradeoff between them and data retention time. In this study, a novel STT-RAM cell structure which uses perfect graphite based Magnetic Tunnel Junction (MTJ) is proposed. First, the cross-section of the structure is selected to be an ellipse of 45 nm and 180 nm dimensions and a six-layer graphite is used as tunnel barrier. By passing a lateral current with a short pulse width (before applying STT current and independent of it) through four middle graphene layers of the tunnel barrier, a 27% reduction in the amplitude of the switching current (for fast switching time of 2 ns) or a 58% reduction in its pulse width is achieved without any reduction in data retention time. Finally, the effect of downscaling of technology on the proposed structure is evaluated. A reduction of 31.6% and 9% in switching current is achieved for 90 and 22 nm cell width respectively by passing sufficient current (100 μA with 0.1 ns pulse width) through the tunnel barrier. Simulations are done using Object Oriented Micro Magnetic Framework (OOMMF).

Detrimental effect of interfacial Dzyaloshinskii-Moriya interaction on perpendicular spin-transfer-torque magnetic random access memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jang, Peong-Hwa; Lee, Seo-Won, E-mail: swlee-sci@korea.ac.kr, E-mail: kj-lee@korea.ac.kr; Song, Kyungmi

2015-11-16

Interfacial Dzyaloshinskii-Moriya interaction in ferromagnet/heavy metal bilayers is recently of considerable interest as it offers an efficient control of domain walls and the stabilization of magnetic skyrmions. However, its effect on the performance of perpendicular spin transfer torque memory has not been explored yet. We show based on numerical studies that the interfacial Dzyaloshinskii-Moriya interaction decreases the thermal energy barrier while increases the switching current. As high thermal energy barrier as well as low switching current is required for the commercialization of spin torque memory, our results suggest that the interfacial Dzyaloshinskii-Moriya interaction should be minimized for spin torque memorymore » applications.« less

Digital Reading: A Question of Prelectio?

ERIC Educational Resources Information Center

Fitzpatrick, Noel

2013-01-01

Digital reading as superficial reading is examined by demonstrating that technologies act as placeholders for different types of memory, artificial memory and true memory. This chapter argues that the affordances of digital technologies enable certain types of reading activity, digital reading, but hinders others, such as deep reading. In…

Theoretical investigation of metal magnetic memory testing technique for detection of magnetic flux leakage signals from buried defect

NASA Astrophysics Data System (ADS)

Xu, Kunshan; Qiu, Xingqi; Tian, Xiaoshuai

2018-01-01

The metal magnetic memory testing (MMMT) technique has been extensively applied in various fields because of its unique advantages of easy operation, low cost and high efficiency. However, very limited theoretical research has been conducted on application of MMMT to buried defects. To promote study in this area, the equivalent magnetic charge method is employed to establish a self-magnetic flux leakage (SMFL) model of a buried defect. Theoretical results based on the established model successfully capture basic characteristics of the SMFL signals of buried defects, as confirmed via experiment. In particular, the newly developed model can calculate the buried depth of a defect based on the SMFL signals obtained via testing. The results show that the new model can successfully assess the characteristics of buried defects, which is valuable in the application of MMMT in non-destructive testing.

Stress-based control of magnetic nanowire domain walls in artificial multiferroic systems

NASA Astrophysics Data System (ADS)

Dean, J.; Bryan, M. T.; Schrefl, T.; Allwood, D. A.

2011-01-01

Artificial multiferroic systems, which combine piezoelectric and piezomagnetic materials, offer novel methods of controlling material properties. Here, we use combined structural and magnetic finite element models to show how localized strains in a piezoelectric film coupled to a piezomagnetic nanowire can attract and pin magnetic domain walls. Synchronous switching of addressable contacts enables the controlled movement of pinning sites, and hence domain walls, in the nanowire without applied magnetic field or spin-polarized current, irrespective of domain wall structure. Conversely, domain wall-induced strain in the piezomagnetic material induces a local potential difference in the piezoelectric, providing a mechanism for sensing domain walls. This approach overcomes the problems in magnetic nanowire memories of domain wall structure-dependent behavior and high power consumption. Nonvolatile random access or shift register memories based on these effects can achieve storage densities >1 Gbit/In2, sub-10 ns switching times, and power consumption <100 keV per operation.

Magnetic Memory from Site Isolated Dy(III) on Silica Materials

PubMed Central

2017-01-01

Achieving magnetic remanence at single isolated metal sites dispersed at the surface of a solid matrix has been envisioned as a key step toward information storage and processing in the smallest unit of matter. Here, we show that isolated Dy(III) sites distributed at the surface of silica nanoparticles, prepared with a simple and scalable two-step process, show magnetic remanence and display a hysteresis loop open at liquid 4He temperature, in contrast to the molecular precursor which does not display any magnetic memory. This singular behavior is achieved through the controlled grafting of a tailored Dy(III) siloxide complex on partially dehydroxylated silica nanoparticles followed by thermal annealing. This approach allows control of the density and the structure of isolated, “bare” Dy(III) sites bound to the silica surface. During the process, all organic fragments are removed, leaving the surface as the sole ligand, promoting magnetic remanence. PMID:28386602

Magnetic memory from site isolated Dy(III) on silica materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Allouche, Florian; Lapadula, Giuseppe; Siddiqi, Georges

Achieving magnetic remanence at single isolated metal sites dispersed at the surface of a solid matrix has been envisioned as a key step toward information storage and processing in the smallest unit of matter. Here, we show that isolated Dy(III) sites distributed at the surface of silica nanoparticles, prepared with a simple and scalable two-step process, show magnetic remanence and display a hysteresis loop open at liquid 4He temperature, in contrast to the molecular precursor which does not display any magnetic memory. This singular behavior is achieved through the controlled grafting of a tailored Dy(III) siloxide complex on partially dehydroxylatedmore » silica nanoparticles followed by thermal annealing. This approach allows control of the density and the structure of isolated, “bare” Dy(III) sites bound to the silica surface. Throughout the process, all organic fragments are removed, leaving the surface as the sole ligand, promoting magnetic remanence.« less

Magnetic memory from site isolated Dy(III) on silica materials

DOE PAGES

Allouche, Florian; Lapadula, Giuseppe; Siddiqi, Georges; ...

2017-02-22

Achieving magnetic remanence at single isolated metal sites dispersed at the surface of a solid matrix has been envisioned as a key step toward information storage and processing in the smallest unit of matter. Here, we show that isolated Dy(III) sites distributed at the surface of silica nanoparticles, prepared with a simple and scalable two-step process, show magnetic remanence and display a hysteresis loop open at liquid 4He temperature, in contrast to the molecular precursor which does not display any magnetic memory. This singular behavior is achieved through the controlled grafting of a tailored Dy(III) siloxide complex on partially dehydroxylatedmore » silica nanoparticles followed by thermal annealing. This approach allows control of the density and the structure of isolated, “bare” Dy(III) sites bound to the silica surface. Throughout the process, all organic fragments are removed, leaving the surface as the sole ligand, promoting magnetic remanence.« less

Structural and Magnetic Properties of Sputter-Deposited Polycrystalline Ni-Mn-Ga Ferromagnetic Shape-Memory Thin Films

NASA Astrophysics Data System (ADS)

Vinodh Kumar, S.; Seenithurai, S.; Manivel Raja, M.; Mahendran, M.

2015-10-01

Polycrystalline Ni-Mn-Ga ferromagnetic shape-memory thin films have been deposited on Si (100) substrates using a direct-current magnetron sputtering technique. The microstructure and the temperature dependence of magnetic properties of the films have been investigated by x-ray diffraction, scanning electron microscopy, and thermomagnetic measurements. As-deposited Ni50.2Mn30.6Ga19.2 film showed quasi-amorphous structure with paramagnetic nature at room temperature. When annealed at 873 K, the quasi-amorphous film attained crystallinity and possessed L21 cubic ordering with high magnetic transition temperature. Saturation magnetization and coercivity values for the annealed film were found to be 220 emu/cm3 and 70 Oe, respectively, indicating soft ferromagnetic character with low magnetocrystalline anisotropy. The magnetic transitions of the film deposited at 100 W were above room temperature, making this a potential candidate for use in microelectromechanical system devices.

Transfluxor circuit amplifies sensing current for computer memories

NASA Technical Reports Server (NTRS)

Milligan, G. C.

1964-01-01

To transfer data from the magnetic memory core to an independent core, a reliable sensing amplifier has been developed. Later the data in the independent core is transferred to the arithmetical section of the computer.

Impairment of working memory maintenance and response in schizophrenia: functional magnetic resonance imaging evidence.

PubMed

Driesen, Naomi R; Leung, Hoi-Chung; Calhoun, Vincent D; Constable, R Todd; Gueorguieva, Ralitza; Hoffman, Ralph; Skudlarski, Pawel; Goldman-Rakic, Patricia S; Krystal, John H

2008-12-15

Comparing prefrontal cortical activity during particular phases of working memory in healthy subjects and individuals diagnosed with schizophrenia might help to define the phase-specific deficits in cortical function that contribute to cognitive impairments associated with schizophrenia. This study featured a spatial working memory task, similar to that used in nonhuman primates, that was designed to facilitate separating brain activation into encoding, maintenance, and response phases. Fourteen patients with schizophrenia (4 medication-free) and 12 healthy comparison participants completed functional magnetic resonance imaging while performing a spatial working memory task with two levels of memory load. Task accuracy was similar in patients and healthy participants. However, patients showed reductions in brain activation during maintenance and response phases but not during the encoding phase. The reduced prefrontal activity during the maintenance phase of working memory was attributed to a greater rate of decay of prefrontal activity over time in patients. Cortical deficits in patients did not appear to be related to antipsychotic treatment. In patients and in healthy subjects, the time-dependent reduction in prefrontal activity during working memory maintenance correlated with poorer performance on the memory task. Overall, these data highlight that basic research insights into the distinct neurobiologies of the maintenance and response phases of working memory are of potential importance for understanding the neurobiology of cognitive impairment in schizophrenia and advancing its treatment.

Neural Basis of Working Memory Enhancement after Acute Aerobic Exercise: fMRI Study of Preadolescent Children.

PubMed

Chen, Ai-Guo; Zhu, Li-Na; Yan, Jun; Yin, Heng-Chan

2016-01-01

Working memory lies at the core of cognitive function and plays a crucial role in children's learning, reasoning, problem solving, and intellectual activity. Behavioral findings have suggested that acute aerobic exercise improves children's working memory; however, there is still very little knowledge about whether a single session of aerobic exercise can alter working memory's brain activation patterns, as assessed by functional magnetic resonance imaging (fMRI). Therefore, we investigated the effect of acute moderate-intensity aerobic exercise on working memory and its brain activation patterns in preadolescent children, and further explored the neural basis of acute aerobic exercise on working memory in these children. We used a within-subjects design with a counterbalanced order. Nine healthy, right-handed children were scanned with a Siemens MAGNETOM Trio 3.0 Tesla magnetic resonance imaging scanner while they performed a working memory task (N-back task), following a baseline session and a 30-min, moderate-intensity exercise session. Compared with the baseline session, acute moderate-intensity aerobic exercise benefitted performance in the N-back task, increasing brain activities of bilateral parietal cortices, left hippocampus, and the bilateral cerebellum. These data extend the current knowledge by indicating that acute aerobic exercise enhances children's working memory, and the neural basis may be related to changes in the working memory's brain activation patterns elicited by acute aerobic exercise.

Dual drain MOSFET detector for crosstie memory systems

NASA Astrophysics Data System (ADS)

Bluzer, N.

1985-03-01

This patent application, which discloses a circuit for detecting binary information in crosstie memory systems includes a dual drain MOSFET device having a single channel with a common source and an integrated, thin-film strip of magnetic material suitable for the storage and propagation of Bloch line-crosstie pairs acting as both a shift register and the device's gate. Current flowing through the device, in the absence of a magnetic field, is equally distributed to each drain; however, changing magnetic fields, normal to the plane of the device and generated by Bloch line-crosstie pairs in the strip, interact with the current such that a distribution imbalance exists and one drain or the other receives a disproportionate fraction of the current depending upon the direction of the magnetic field.

Modeling of vibrations isolation and arrest by shape memory parts and permanent magnets

NASA Astrophysics Data System (ADS)

Belyaev, Fedor S.; Volkov, Aleksandr E.; Evard, Margarita E.; Vikulenkov, Andrey V.; Uspenskiy, Evgeniy S.

2018-05-01

A vibration protection system under consideration consists of a payload connected to a vibrating housing by shape memory alloy (SMA) slotted springs. To provide an arrest function two permanent magnets are inserted into the system. The slotted SMA elements are preliminary deformed in the martensitic state. Activation of one element by heating initiates force and displacement generation, which provide an arrest of the payload by magnets. The magnets also secure the arrest mode after cooling of the SMA element. Activation of the other element results in uncaging of the payload and switching to the vibration isolation mode. Computer simulations of arrest and uncaging when the housing is quiescent or producing sine-wave displacements were carried out. Functional-mechanical behavior of SMA parts was described by means of a microstructural model.

Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications

NASA Astrophysics Data System (ADS)

Dieny, B.; Chshiev, M.

2017-04-01

Spin electronics is a rapidly expanding field stimulated by a strong synergy between breakthrough basic research discoveries and industrial applications in the fields of magnetic recording, magnetic field sensors, nonvolatile memories [magnetic random access memories (MRAM) and especially spin-transfer-torque MRAM (STT-MRAM)]. In addition to the discovery of several physical phenomena (giant magnetoresistance, tunnel magnetoresistance, spin-transfer torque, spin-orbit torque, spin Hall effect, spin Seebeck effect, etc.), outstanding progress has been made on the growth and nanopatterning of magnetic multilayered films and nanostructures in which these phenomena are observed. Magnetic anisotropy is usually observed in materials that have large spin-orbit interactions. However, in 2002 perpendicular magnetic anisotropy (PMA) was discovered to exist at magnetic metal/oxide interfaces [for instance Co (Fe )/alumina ]. Surprisingly, this PMA is observed in systems where spin-orbit interactions are quite weak, but its amplitude is remarkably large—comparable to that measured at Co /Pt interfaces, a reference for large interfacial anisotropy (anisotropy˜1.4 erg /cm2=1.4 mJ /m2 ). Actually, this PMA was found to be very common at magnetic metal/oxide interfaces since it has been observed with a large variety of amorphous or crystalline oxides, including AlOx, MgO, TaOx, HfOx, etc. This PMA is thought to be the result of electronic hybridization between the oxygen and the magnetic transition metal orbit across the interface, a hypothesis supported by ab initio calculations. Interest in this phenomenon was sparked in 2010 when it was demonstrated that the PMA at magnetic transition metal/oxide interfaces could be used to build out-of-plane magnetized magnetic tunnel junctions for STT-MRAM cells. In these systems, the PMA at the CoFeB /MgO interface can be used to simultaneously obtain good memory retention, thanks to the large PMA amplitude, and a low write current, thanks to a relatively weak Gilbert damping. These two requirements for memories tend to be difficult to reconcile since they rely on the same spin-orbit coupling. PMA-based approaches have now become ubiquitous in the designs for perpendicular STT-MRAM, and major microelectronics companies are actively working on their development with the first goal of addressing embedded FLASH and static random access memory-type of applications. Scalability of STT-MRAM devices based on this interfacial PMA is expected to soon exceed the 20-nm nodes. Several very active new fields of research also rely on interfacial PMA at magnetic metal/oxide interfaces, including spin-orbit torques associated with Rashba or spin Hall effects, record high speed domain wall propagation in buffer/magnetic metal/oxide-based magnetic wires, and voltage-based control of anisotropy. This review deals with PMA at magnetic metal/oxide interfaces from its discovery, by examining the diversity of systems in which it has been observed and the physicochemical methods through which the key roles played by the electronic hybridization at the metal/oxide interface were elucidated. The physical origins of the phenomenon are also covered and how these are supported by ab initio calculations is dealt with. Finally, some examples of applications of this interfacial PMA in STT-MRAM are listed along with the various emerging research topics taking advantage of this PMA.

Electron transport theory in magnetic nanostructures

NASA Astrophysics Data System (ADS)

Choy, Tat-Sang

Magnetic nanostructure has been a new trend because of its application in making magnetic sensors, magnetic memories, and magnetic reading heads in hard disks drives. Although a variety of nanostructures have been realized in experiments in recent years by innovative sample growth techniques, the theoretical study of these devices remain a challenge. On one hand, atomic scale modeling is often required for studying the magnetic nanostructures; on the other, these structures often have a dimension on the order of one micrometer, which makes the calculation numerically intensive. In this work, we have studied the electron transport theory in magnetic nanostructures, with special attention to the giant magnetoresistance (GMR) structure. We have developed a model that includes the details of the band structure and disorder, both of which are both important in obtaining the conductivity. We have also developed an efficient algorithm to compute the conductivity in magnetic nanostructures. The model and the algorithm are general and can be applied to complicated structures. We have applied the theory to current-perpendicular-to-plane GMR structures and the results agree with experiments. Finally, we have searched for the atomic configuration with the highest GMR using the simulated annealing algorithm. This method is computationally intensive because we have to compute the GMR for 103 to 104 configurations. However it is still very efficient because the number of steps it takes to find the maximum is much smaller than the number of all possible GMR structures. We found that ultra-thin NiCu superlattices have surprisingly large GMR even at the moderate disorder in experiments. This finding may be useful in improving the GMR technology.

Iconic memory and parietofrontal network: fMRI study using temporal integration.

PubMed

Saneyoshi, Ayako; Niimi, Ryosuke; Suetsugu, Tomoko; Kaminaga, Tatsuro; Yokosawa, Kazuhiko

2011-08-03

We investigated the neural basis of iconic memory using functional magnetic resonance imaging. The parietofrontal network of selective attention is reportedly relevant to readout from iconic memory. We adopted a temporal integration task that requires iconic memory but not selective attention. The results showed that the task activated the parietofrontal network, confirming that the network is involved in readout from iconic memory. We further tested a condition in which temporal integration was performed by visual short-term memory but not by iconic memory. However, no brain region revealed higher activation for temporal integration by iconic memory than for temporal integration by visual short-term memory. This result suggested that there is no localized brain region specialized for iconic memory per se.

Are Errors Differentiable from Deceptive Responses when Feigning Memory Impairment? An fMRI Study

ERIC Educational Resources Information Center

Lee, Tatia M. C.; Au, Ricky K. C.; Liu, Ho-Ling; Ting, K. H.; Huang, Chih-Mao; Chan, Chetwyn C. H.

2009-01-01

Previous neuroimaging studies have suggested that the neural activity associated with truthful recall, with false memory, and with feigned memory impairment are different from one another. Here, we report a functional magnetic resonance imaging (fMRI) study that addressed an important but yet unanswered question: Is the neural activity associated…

Evaluating Models of Working Memory through the Effects of Concurrent Irrelevant Information

ERIC Educational Resources Information Center

Chein, Jason M.; Fiez, Julie A.

2010-01-01

Working memory is believed to play a central role in almost all domains of higher cognition, yet the specific mechanisms involved in working memory are still fiercely debated. We describe a neuroimaging experiment with functional magnetic resonance imaging (fMRI) and a companion behavioral experiment, and in both we seek to adjudicate between…

Source Monitoring 15 Years Later: What Have We Learned from fMRI about the Neural Mechanisms of Source Memory?

ERIC Educational Resources Information Center

Mitchell, Karen J.; Johnson, Marcia K.

2009-01-01

Focusing primarily on functional magnetic resonance imaging (fMRI), this article reviews evidence regarding the roles of subregions of the medial temporal lobes, prefrontal cortex, posterior representational areas, and parietal cortex in source memory. In addition to evidence from standard episodic memory tasks assessing accuracy for neutral…

Periodic Cellular Structure Technology for Shape Memory Alloys

NASA Technical Reports Server (NTRS)

Chen, Edward Y.

2015-01-01

Shape memory alloys are being considered for a wide variety of adaptive components for engine and airframe applications because they can undergo large amounts of strain and then revert to their original shape upon heating or unloading. Transition45 Technologies, Inc., has developed an innovative periodic cellular structure (PCS) technology for shape memory alloys that enables fabrication of complex bulk configurations, such as lattice block structures. These innovative structures are manufactured using an advanced reactive metal casting technology that offers a relatively low cost and established approach for constructing near-net shape aerospace components. Transition45 is continuing to characterize these structures to determine how best to design a PCS to better exploit the use of shape memory alloys in aerospace applications.

The Forensic Potential of Flash Memory

DTIC Science & Technology

2009-09-01

limit range of 10 to 100 years before data is lost [12]. 5. Flash Memory Logical Structure The logical structure of flash memory from least to...area is not standardized and is manufacturer specific. This information will be used by the wear leveling algorithms and as such will be proprietary...memory cells, the manufacturers of the flash implement a wear leveling algorithm . In contrast, a magnetic disk in an overwrite operation will reuse the

Measurement of irregularities in angular velocities of rotating assemblies in memory devices on magnetic carriers

NASA Technical Reports Server (NTRS)

Virakas, G. I.; Matsyulevichyus, R. A.; Minkevichyus, K. P.; Potsyus, Z. Y.; Shirvinskas, B. D.

1973-01-01

Problems in measurement of irregularities in angular velocity of rotating assemblies in memory devices with rigid and flexible magnetic data carriers are discussed. A device and method for determination of change in angular velocities in various frequency and rotation rate ranges are examined. A schematic diagram of a photoelectric sensor for recording the signal pulses is provided. Mathematical models are developed to show the amount of error which can result from misalignment of the test equipment.

High speed magneto-resistive random access memory

NASA Technical Reports Server (NTRS)

Wu, Jiin-Chuan (Inventor); Stadler, Henry L. (Inventor); Katti, Romney R. (Inventor)

1992-01-01

A high speed read MRAM memory element is configured from a sandwich of magnetizable, ferromagnetic film surrounding a magneto-resistive film which may be ferromagnetic or not. One outer ferromagnetic film has a higher coercive force than the other and therefore remains magnetized in one sense while the other may be switched in sense by a switching magnetic field. The magneto-resistive film is therefore sensitive to the amplitude of the resultant field between the outer ferromagnetic films and may be constructed of a high resistivity, high magneto-resistive material capable of higher sensing currents. This permits higher read voltages and therefore faster read operations. Alternate embodiments with perpendicular anisotropy, and in-plane anisotropy are shown, including an embodiment which uses high permeability guides to direct the closing flux path through the magneto-resistive material. High density, high speed, radiation hard, memory matrices may be constructed from these memory elements.

Single Event Upset Analysis: On-orbit performance of the Alpha Magnetic Spectrometer Digital Signal Processor Memory aboard the International Space Station

NASA Astrophysics Data System (ADS)

Li, Jiaqiang; Choutko, Vitaly; Xiao, Liyi

2018-03-01

Based on the collection of error data from the Alpha Magnetic Spectrometer (AMS) Digital Signal Processors (DSP), on-orbit Single Event Upsets (SEUs) of the DSP program memory are analyzed. The daily error distribution and time intervals between errors are calculated to evaluate the reliability of the system. The particle density distribution of International Space Station (ISS) orbit is presented and the effects from the South Atlantic Anomaly (SAA) and the geomagnetic poles are analyzed. The impact of solar events on the DSP program memory is carried out combining data analysis and Monte Carlo simulation (MC). From the analysis and simulation results, it is concluded that the area corresponding to the SAA is the main source of errors on the ISS orbit. Solar events can also cause errors on DSP program memory, but the effect depends on the on-orbit particle density.

Structural Bus and Release Mechanisms on the ST5 Satellites: Summary and Status

NASA Technical Reports Server (NTRS)

Rossoni, Peter

2007-01-01

The Space Technology 5 Mechanical System met the challenge of packaging a fully functional science and technology satellite system with its Deployer mechanism into a compact 0.07cu m volume. Three 25 kg satellites were orbited in constellation in March, 2006. The ST5 mechanical system is composed of 1) The Structural Bus; 2) Magnetometer Instrument Boom 3) Spacecraft Deployer Release Mechanism This system includes a highly integrated electronics enclosure as a multifunctional structure; a lightweight, magnetically clean Magnetometer Boom; the first use of Nitinol Shape-Memory Alloy trigger devices for deploying multiple spacecraft; an innovative compliant mount for the umbilical connector and a Deployer mechanism that imparts both separation velocity and mission spin rate to three constellation flying satellites These elements employed cutting-edge design and analysis tools, state-of-the-art testing facilities and proven engineering techniques to meet stringent performance criteria, enabling the mission s success.

Evolution from MEMS-based Linear Drives to Bio-based Nano Drives

NASA Astrophysics Data System (ADS)

Fujita, Hiroyuki

The successful extension of semiconductor technology to fabricate mechanical parts of the sizes from 10 to 100 micrometers opened wide ranges of possibilities for micromechanical devices and systems. The fabrication technique is called micromachining. Micromachining processes are based on silicon integrated circuits (IC) technology and used to build three-dimensional structures and movable parts by the combination of lithography, etching, film deposition, and wafer bonding. Microactuators are the key devices allowing MEMS to perform physical functions. Some of them are driven by electric, magnetic, and fluidic forces. Some others utilize actuator materials including piezoelectric (PZT, ZnO, quartz) and magnetostrictive materials (TbFe), shape memory alloy (TiNi) and bio molecular motors. This paper deals with the development of MEMS based microactuators, especially linear drives, following my own research experience. They include an electrostatic actuator, a superconductive levitated actuator, arrayed actuators, and a bio-motor-driven actuator.

Reversible piezomagnetoelectric switching in bulk polycrystalline ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stevenson, T., E-mail: t.j.stevenson@leeds.ac.uk; Bennett, J.; Brown, A. P.

2014-08-01

Magnetoelectric (ME) coupling in materials offer tremendous advantages in device functionality enabling technologies including advanced electronic memory, combining electronic speed, and efficiency with magnetic robustness. However, low cost polycrystalline ME materials are excluded from most commercial applications, operating only at cryogenic temperatures, impractically large electric/magnetic fields, or with low ME coefficients (1-100 mV/cm Oe). Despite this, the technological potential of single compound ME coupling has continued to drive research into multiferroics over the last two decades. Here we show that by manipulating the large induced atomic strain within the polycrystalline, room temperature multiferroic compound 0.7BiFeO{sub 3}–0.3PbTiO{sub 3}, we can induce amore » reversible, piezoelectric strain controlled ME effect. Employing an in situ neutron diffraction experiment, we have demonstrated that this piezomagnetoelectric effect manifests with an applied electric field >8 kV/mm at the onset of piezoelectric strain, engineered in to the compound by crystallographic phase mixing. This produces a remarkable intrinsic ME coefficient of 1276 mV/cm Oe, due to a strain driven modification to the oxygen sub-lattice, inducing an increase in magnetic moment per Fe{sup 3+} ion of +0.142 μ{sub B}. This work provides a framework for investigations into strain engineered nanostructures to realize low-cost ME devices designed from the atoms up, as well as contributing to the deeper understanding of single phase ME coupling mechanisms.« less

Integration of 3D 1H-magnetic resonance spectroscopy data into neuronavigation systems for tumor biopsies

NASA Astrophysics Data System (ADS)

Kanberoglu, Berkay; Moore, Nina Z.; Frakes, David; Karam, Lina J.; Debbins, Josef P.; Preul, Mark C.

2013-03-01

Many important applications in clinical medicine can benefit from the fusion of spectroscopy data with anatomical images. For example, the correlation of metabolite profiles with specific regions of interest in anatomical tumor images can be useful in characterizing and treating heterogeneous tumors that appear structurally homogeneous. Such applications can build on the correlation of data from in-vivo Proton Magnetic Resonance Spectroscopy Imaging (1HMRSI) with data from genetic and ex-vivo Nuclear Magnetic Resonance spectroscopy. To establish that correlation, tissue samples must be neurosurgically extracted from specifically identified locations with high accuracy. Toward that end, this paper presents new neuronavigation technology that enhances current clinical capabilities in the context of neurosurgical planning and execution. The proposed methods improve upon the current state-of-the-art in neuronavigation through the use of detailed three dimensional (3D) 1H-MRSI data. MRSI spectra are processed and analyzed, and specific voxels are selected based on their chemical contents. 3D neuronavigation overlays are then generated and applied to anatomical image data in the operating room. Without such technology, neurosurgeons must rely on memory and other qualitative resources alone for guidance in accessing specific MRSI-identified voxels. In contrast, MRSI-based overlays provide quantitative visual cues and location information during neurosurgery. The proposed methods enable a progressive new form of online MRSI-guided neuronavigation that we demonstrate in this study through phantom validation and clinical application.

Bernard Stiegler's Philosophy of Technology: Invention, Decision, and Education in Times of Digitization

ERIC Educational Resources Information Center

Kouppanou, Anna

2015-01-01

Bernard Stiegler's concept of individuation suggests that the human being is co-constituted with technology. Technology precedes the individual in the respect that the latter is thrown in a technological world that always already contains externally inscribed memories--what he calls tertiary memories--that selectively form the individual and the…

Current-Driven Dynamics of Skyrmions Stabilized in MnSi Nanowires Revealed by Topological Hall Effect

NASA Astrophysics Data System (ADS)

Liang, Dong; Degrave, John; Stolt, Matthew; Tokura, Yoshinori; Jin, Song

2015-03-01

Skyrmions, novel topologically stable spin vortices, hold promise for next-generation high-density magnetic storage technologies due to their nanoscale domains and ultralow energy consumption. One-dimensional (1D) nanowires are ideal hosts for skyrmions since they not only serve as a natural platform for magnetic racetrack memory devices but also can potentially stabilize skyrmions. We use the topological Hall effect (THE) to study the phase stability and current-driven dynamics of the skyrmions in MnSi nanowires. The THE was observed in an extended magnetic field-temperature window (15 to 30 K), suggesting stabilization of skyrmion phase in nanowires compared with the bulk (27 to 29.5 K). Furthermore, we study skyrmion dynamics in this extended skyrmion phase region and found that under the high current-density of 108-109Am-2 enabled by nanowire geometry, the THE decreases with increasing current densities, which demonstrates the current-driven motion of skyrmions generating the emergent electric field. These results open up the exploration of nanowires as an attractive platform for investigating skyrmion physics in 1D systems and exploiting skyrmions in magnetic storage concepts. This work is supported by US National Science Foundation (ECCS-1231916) and JSPS Grant-in-Aid for Scientific Research No. 24224009.

Robustness of topological Hall effect of nontrivial spin textures

NASA Astrophysics Data System (ADS)

Jalil, Mansoor B. A.; Tan, Seng Ghee

2014-05-01

We analyze the topological Hall conductivity (THC) of topologically nontrivial spin textures like magnetic vortices and skyrmions and investigate its possible application in the readback for magnetic memory based on those spin textures. Under adiabatic conditions, such spin textures would theoretically yield quantized THC values, which are related to topological invariants such as the winding number and polarity, and as such are insensitive to fluctuations and smooth deformations. However, in a practical setting, the finite size of spin texture elements and the influence of edges may cause them to deviate from their ideal configurations. We calculate the degree of robustness of the THC output in practical magnetic memories in the presence of edge and finite size effects.

Energy-dispersive neutron imaging and diffraction of magnetically driven twins in a Ni2MnGa single crystal magnetic shape memory alloy

NASA Astrophysics Data System (ADS)

Kabra, Saurabh; Kelleher, Joe; Kockelmann, Winfried; Gutmann, Matthias; Tremsin, Anton

2016-09-01

Single crystals of a partially twinned magnetic shape memory alloy, Ni2MnGa, were imaged using neutron diffraction and energy-resolved imaging techniques at the ISIS spallation neutron source. Single crystal neutron diffraction showed that the crystal produces two twin variants with a specific crystallographic relationship. Transmission images were captured using a time of flight MCP/Timepix neutron counting detector. The twinned and untwinned regions were clearly distinguishable in images corresponding to narrow-energy transmission images. Further, the spatially-resolved transmission spectra were used to elucidate the orientations of the crystallites in the different volumes of the crystal.

Imaging Magnetic Vortices Dynamics Using Lorentz Electron Microscopy with GHz Excitations

NASA Astrophysics Data System (ADS)

Zhu, Yimei

2015-03-01

Magnetic vortices in thin films are naturally formed spiral spin configurations with a core polarization pointing out of the film plane. They typically represent ground states with high structural and thermal stability as well as four different chirality-polarity combinations, offering great promise in the development of spin-based devices. For applications to spin oscillators, non-volatile memory and logic devices, the fundamental understanding and precise control of vortex excitations and dynamic switching behavior are essential. The compact dimensionality and fast spin dynamics set grand challenges for direct imaging technologies. Recently, we have developed a unique method to directly visualize the dynamic magnetic vortex motion using advanced Lorentz electron microscopy combined with GHz electronic excitations. It enables us to map the orbit of a magnetic vortex core in a permalloy square with <5nm resolution and to reveal subtle changes of the gyrotropic motion as the vortex is driven through resonance. Further, in multilayer spin-valve disks, we probed the strongly coupled coaxial vortex motion in the dipolar- and indirect exchange-coupled regimes and unraveled the underlying coherence and modality. Our approach is complementary to X-ray magnetic circular dichroism and is of general interest to the magnetism community as it paves a way to study fundamental spin phenomena with unprecedented resolution and accuracy. Collaborations with S.D. Pollard, J.F. Pulecio, D.A. Arena and K.S. Buchanan are acknowledged. Work supported by DOE-BES, Material Sciences and Engineering Division, under Contract No. DE-AC02-98CH10886.

Current-controlled unidirectional edge-meron motion

NASA Astrophysics Data System (ADS)

Xing, Xiangjun; Pong, Philip W. T.; Zhou, Yan

2016-11-01

In order to address many of the challenges and bottlenecks currently experienced by traditional charge-based technologies, various alternatives are being actively explored to provide potential solutions of device miniaturization and scaling in the post-Moore's-law era. Amongst these alternatives, spintronic physics and devices have recently attracted rapidly increasing interest by exploiting the additional degree of electrons-spin. For example, magnetic domain-wall racetrack-memory and logic devices have been realized via manipulating domain-wall motion. As compared to domain-wall-based devices, magnetic skyrmions have the advantages of ultrasmall size (typically 5-100 nm in diameter), facile current-driven motion, topological stability, and peculiar emergent electrodynamics, promising for next-generation electronics applications in the post-Moore's-law regime. Here, a magnetic meron device, which behaves similarly to a PN-junction diode, is demonstrated for the first time, by tailoring the current-controlled unidirectional motion of edge-merons (i.e., fractional skyrmions) in a nanotrack with interfacial Dzyaloshinskii-Moriya interaction. The working principles of the meron device, theoretically predicted from the Thiele equation for topological magnetic objects, are further verified using micromagnetic simulations. The present study has revealed the topology-independent transport property of different magnetic objects and is expected to open the vista toward integrated composite circuitry (with unified data storage and processing) based on a single magnetic chip, as the meron device can be used, either as a building block to develop complex logic components or as a signal controller to interconnect skyrmion, domain-wall, and even spin-wave devices.

Simulating functional magnetic materials on supercomputers.

PubMed

Gruner, Markus Ernst; Entel, Peter

2009-07-22

The recent passing of the petaflop per second landmark by the Roadrunner project at the Los Alamos National Laboratory marks a preliminary peak of an impressive world-wide development in the high-performance scientific computing sector. Also, purely academic state-of-the-art supercomputers such as the IBM Blue Gene/P at Forschungszentrum Jülich allow us nowadays to investigate large systems of the order of 10(3) spin polarized transition metal atoms by means of density functional theory. Three applications will be presented where large-scale ab initio calculations contribute to the understanding of key properties emerging from a close interrelation between structure and magnetism. The first two examples discuss the size dependent evolution of equilibrium structural motifs in elementary iron and binary Fe-Pt and Co-Pt transition metal nanoparticles, which are currently discussed as promising candidates for ultra-high-density magnetic data storage media. However, the preference for multiply twinned morphologies at smaller cluster sizes counteracts the formation of a single-crystalline L1(0) phase, which alone provides the required hard magnetic properties. The third application is concerned with the magnetic shape memory effect in the Ni-Mn-Ga Heusler alloy, which is a technologically relevant candidate for magnetomechanical actuators and sensors. In this material strains of up to 10% can be induced by external magnetic fields due to the field induced shifting of martensitic twin boundaries, requiring an extremely high mobility of the martensitic twin boundaries, but also the selection of the appropriate martensitic structure from the rich phase diagram.

A Mobile Technology Framework for the Dissemination of Cultural Memory

ERIC Educational Resources Information Center

Kammas, Stavros

2009-01-01

The current research proposes a mobile technology framework in cultural heritage setting for the dissemination of cultural memory among its visitors. The framework studies the complex concept of human memory and attempts to adopt the human information perception, as a learning process, on a mobile framework that will allow their users to interact…

Emerging memories: resistive switching mechanisms and current status

NASA Astrophysics Data System (ADS)

Jeong, Doo Seok; Thomas, Reji; Katiyar, R. S.; Scott, J. F.; Kohlstedt, H.; Petraru, A.; Hwang, Cheol Seong

2012-07-01

The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied. Resistive switching phenomena have been observed in many oxides: (i) binary transition metal oxides (TMOs), e.g. TiO2, Cr2O3, FeOx and NiO; (ii) perovskite-type complex TMOs that are variously functional, paraelectric, ferroelectric, multiferroic and magnetic, e.g. (Ba,Sr)TiO3, Pb(Zrx Ti1-x)O3, BiFeO3 and PrxCa1-xMnO3 (iii) large band gap high-k dielectrics, e.g. Al2O3 and Gd2O3; (iv) graphene oxides. In the non-oxide category, higher chalcogenides are front runners, e.g. In2Se3 and In2Te3. Hence, the number of materials showing this technologically interesting behaviour for information storage is enormous. Resistive switching in these materials can form the basis for the next generation of NVM, i.e. RRAM, when current semiconductor memory technology reaches its limit in terms of density. RRAMs may be the high-density and low-cost NVMs of the future. A review on this topic is of importance to focus concentration on the most promising materials to accelerate application into the semiconductor industry. This review is a small effort to realize the ambitious goal of RRAMs. Its basic focus is on resistive switching in various materials with particular emphasis on binary TMOs. It also addresses the current understanding of resistive switching behaviour. Moreover, a brief comparison between RRAMs and memristors is included. The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.

The posterior parietal paradox: Why do functional magnetic resonance imaging and lesion studies on episodic memory produce conflicting results?

PubMed

Schoo, L A; van Zandvoort, M J E; Biessels, G J; Kappelle, L J; Postma, A; de Haan, E H F

2011-03-01

Recent functional magnetic resonance imaging (fMRI) studies addressing healthy subjects point towards posterior parietal cortex (PPC) involvement in episodic memory tasks. This is noteworthy, since neuropsychological studies usually do not connect parietal lesions to episodic memory impairments. Therefore an inventory of the possible factors behind this apparent paradox is warranted. This review compared fMRI studies which demonstrated PPC activity in episodic memory tasks, with findings with studies of patients with PPC lesions. A systematic evaluation of possible explanations for the posterior parietal paradox indicates that PPC activation in fMRI studies does not appear to be attributable to confounding cognitive/psychomotor processes, such as button pressing or stimulus processing. What may be of more importance is the extent to which an episodic memory task loads on three closely related cognitive processes: effort and attention, self-related activity, and scene and image construction. We discuss to what extent these cognitive processes can account for the paradox between lesion and fMRI results. They are strongly intertwined with the episodic memory and may critically determine in how far the PPC plays a role in a given memory task. Future patient studies might profit from specifically taking these cognitive factors into consideration in the task design. ©2010 The British Psychological Society.

Impact of emotional salience on episodic memory in attention-deficit/hyperactivity disorder: a functional magnetic resonance imaging study.

PubMed

Krauel, Kerstin; Duzel, Emrah; Hinrichs, Hermann; Santel, Stephanie; Rellum, Thomas; Baving, Lioba

2007-06-15

Patients with attention-deficit/hyperactivity disorder (ADHD) show episodic memory deficits especially in complex memory tasks. We investigated the neural correlates of memory formation in ADHD and their modulation by stimulus salience. We recorded event-related functional magnetic resonance imaging during an episodic memory paradigm with neutral and emotional pictures in 12 male ADHD subjects and 12 healthy adolescents. Emotional salience did significantly augment memory performance in ADHD patients. Successful encoding of neutral pictures was associated with activation of the anterior cingulate cortex (ACC) in healthy adolescents but with activation of the superior parietal lobe (SPL) and precuneus in ADHD patients. Successful encoding of emotional pictures was associated with prefrontal and inferior temporal cortex activation in both groups. Healthy adolescents, moreover, showed deactivation in the inferior parietal lobe. From a pathophysiological point of view, the most striking functional differences between healthy adolescents and ADHD patients were in the ACC and SPL. We suggest that increased SPL activation in ADHD reflected attentional compensation for low ACC activation during the encoding of neutral pictures. The higher salience of emotional stimuli, in contrast, regulated the interplay between ACC and SPL in conjunction with improving memory to the level of healthy adolescents.

Study of magnetization switching in coupled magnetic nanostructured systems

NASA Astrophysics Data System (ADS)

Radu, Cosmin

A study of magnetization dynamics experiments in nanostructured materials using the rf susceptibility tunnel diode oscillator (TDO) method is presented along with a extensive theoretical analysis. An original, computer controlled experimental setup that measures the change in susceptibility with the variation in external magnetic field and sample temperature was constructed. The TDO-based experiment design and construction is explained in detail, showing all the elements of originality. This experimental technique has proven reliable for characterizing samples with uncoupled magnetic structure and various magnetic anisotropies like: CrO2, FeCo/IrMn and Co/SiO2 thin films. The TDO was subsequently used to explore the magnetization switching in coupled magnetic systems, like synthetic antiferromagnet (SAF) structures. Magnetoresistive random access memory (MRAM) is an important example of devices where the use of SAF structure is essential. To support the understanding of the SAF magnetic behavior, its configuration and application are reviewed and more details are provided in an appendix. Current problems in increasing the scalability and decreasing the error rate of MRAM devices are closely connected to the switching properties of the SAF structures. Several theoretical studies that were devoted to the understanding of the concepts of SAF critical curve are reviewed. As one can notice, there was no experimental determination of SAF critical curve, due to the difficulties in characterizing a magnetic coupled structure. Depending of the coupling strength between the two ferromagnetic layers, on the SAF critical curve one distinguishes several new features, inexistent in the case of uncoupled systems. Knowing the configuration of the SAF critical curve is of great importance in order to control its switching characteristics. For the first time a method of experimentally recording the critical curve for SAF is proposed in this work. In order to overcome technological limitations, a new way of recording the critical curve by using an additional magnetic bias field was explored. Keywords: magnetization dynamics, magnetic susceptibility, tunnel diode oscillator, critical curve, synthetic antiferromagnet, coupled magnetic structures, MRAM.

Perspectives of voltage control for magnetic exchange bias in multiferroic heterostructures

NASA Astrophysics Data System (ADS)

Yang, Q.; Zhou, Z.; Sun, N. X.; Liu, M.

2017-04-01

Exchange bias, as an internal magnetic bias induced by a ferromagnetic-antiferromagnetic exchange coupling, is extremely important in many magnetic applications such as memories, sensors and other devices. Voltage control of exchange bias in multiferroics provides an energy-efficient way to achieve a rapidly 180° deterministic switching of magnetization, which has been considered as a key challenge in realizing next generation of fast, compact and ultra-low power magnetoelectric memories and sensors. Additionally, exchange bias can enhance dynamic magnetoelectric coupling strength in an external-field-free manner. In this paper, we provide a perspective on voltage control of exchange bias in different multiferroic heterostructures. Brief mechanization and related experiments are discussed as well as future trend and challenges that can be overcome by electrically tuning of exchange bias in state-of-the-art magnetoelectric devices.

LLB simulation of the temperature dependent switching critical curve of a Stoner-Wohlfarth macrospin in the presence of a polarized current

NASA Astrophysics Data System (ADS)

Oniciuc, E.; Stoleriu, L.; Stancu, A.

2014-02-01

An extension of Landau-Lifshitz-Bloch (LLB) equation is used to describe the behavior of single-domain particles under the influence of magnetic fields and polarized currents at elevated temperatures. We prove that using such a model, which takes into account the longitudinal magnetization relaxation, together with the consideration of the quartic crystalline anisotropy term, a number of recent experimental results can be explained concerning the free layer characteristic critical curves of spin valves commonly used in spin electronics. These results are of paramount importance for heat assisted magnetic recording (HAMR) processes in hard-drives or in new memory systems like the spin-transfer-torque magnetic random access memory (HA-STTMRAM) with the aim of increasing data density writing while avoiding superparamagnetic limit.

Photo-activation of Single Molecule Magnet Behavior in a Manganese-based Complex

NASA Astrophysics Data System (ADS)

Fetoh, Ahmed; Cosquer, Goulven; Morimoto, Masakazu; Irie, Masahiro; El-Gammal, Ola; El-Reash, Gaber Abu; Breedlove, Brian K.; Yamashita, Masahiro

2016-03-01

A major roadblock to fully realizing molecular electronic devices is the ability to control the properties of each molecule in the device. Herein we report the control of the magnetic properties of single-molecule magnets (SMMs), which can be used in memory devices, by using a photo-isomerizable diarthylenthene ligand. Photo-isomerization of the diarylethene ligand bridging two manganese salen complexes with visible light caused a significant change in the SMM behavior due to opening of the six-membered ring of diarylethene ligand, accompanied by reorganization of the entire molecule. The ring-opening activated the frequency-dependent magnetization of the complex. Our results are a major step towards the realization of molecular memory devices composed of SMMs because the SMM behaviour can be turned on and off simply by irradiating the molecule.

Functional Magnetic Resonance Imaging of Semantic Memory as a Presymptomatic Biomarker of Alzheimer’s Disease Risk

PubMed Central

Sugarman, Michael A.; Woodard, John L.; Nielson, Kristy A.; Seidenberg, Michael; Smith, J. Carson; Durgerian, Sally; Rao, Stephen M.

2011-01-01

Extensive research efforts have been directed toward strategies for predicting risk of developing Alzheimer’s disease (AD) prior to the appearance of observable symptoms. Existing approaches for early detection of AD vary in terms of their efficacy, invasiveness, and ease of implementation. Several non-invasive magnetic resonance imaging strategies have been developed for predicting decline in cognitively healthy older adults. This review will survey a number of studies, beginning with the development of a famous name discrimination task used to identify neural regions that participate in semantic memory retrieval and to test predictions of several key theories of the role of the hippocampus in memory. This task has revealed medial temporal and neocortical contributions to recent and remote memory retrieval, and it has been used to demonstrate compensatory neural recruitment in older adults, apolipoprotein E ε4 carriers, and amnestic mild cognitive impairment patients. Recently, we have also found that the famous name discrimination task provides predictive value for forecasting episodic memory decline among asymptomatic older adults. Other studies investigating the predictive value of semantic memory tasks will also be presented. We suggest several advantages associated with the use of semantic processing tasks, particularly those based on person identification, in comparison to episodic memory tasks to study AD risk. Future directions for research and potential clinical uses of semantic memory paradigms are also discussed. PMID:21996618

Does polycystic ovary syndrome affect cognition? A functional magnetic resonance imaging study exploring working memory.

PubMed

Soleman, Remi S; Kreukels, Baudewijntje P C; Veltman, Dick J; Cohen-Kettenis, Peggy T; Hompes, Peter G A; Drent, Madeleine L; Lambalk, Cornelis B

2016-05-01

To study effects of overexposure to androgens and subsequent antiandrogenic treatment on brain activity during working memory processes in women with polycystic ovary syndrome (PCOS). In this longitudinal study, working memory function was evaluated with the use of functional magnetic resonance imaging (MRI) in women with PCOS before and after antiandrogenic treatment. Department of reproductive medicine, university medical center. Fourteen women with PCOS and with hyperandrogenism and 20 healthy control women without any features of PCOS or other hormonal disorders. Antiandrogenic hormone treatment. Functional MRI response during a working memory task. At baseline women with PCOS showed more activation than the control group within the right superior parietal lobe and the inferior parietal lobe during task (all memory conditions). Task performance (speed and accuracy) did not differ between the groups. After antiandrogenic treatment the difference in overall brain activity between the groups disappeared and accuracy in the high memory load condition of the working memory task increased in women with PCOS. Women with PCOS may need additional neural resources during a working memory task compared with women without PCOS, suggesting less efficient executive functioning. This inefficiency may have effects on daily life functioning of women with PCOS. Antiandrogenic treatment appears to have a beneficial effect on this area of cognitive functioning. NTR2493. Copyright © 2016. Published by Elsevier Inc.

Transcranial magnetic stimulation of the left angular gyrus during encoding does not impair associative memory performance.

PubMed

Koen, Joshua D; Thakral, Preston P; Rugg, Michael D

2018-06-05

The left angular gyrus (AG) is thought to play a critical role in episodic retrieval and has been implicated in the recollection of specific details of prior episodes. Motivated by recent fMRI studies in which it was reported that elevated neural activity in left AG during study is predictive of subsequent associative memory, the present study investigated whether the region plays a causal role in associative memory encoding. Participants underwent online transcranial magnetic stimulation (TMS) while encoding word pairs prior to an associative memory test. We predicted that TMS to left AG during encoding would result in reduced subsequent memory accuracy, especially for estimates of recollection. The results did not support this prediction: estimates of both recollection and familiarity-driven recognition were essentially identical for words pairs encoded during TMS to left AG relative to a vertex control site. These results suggest that the left AG may not play a necessary role in associative memory encoding. TMS to left AG did however affect confidence for incorrect 'intact' judgments to rearranged pairs and incorrect 'rearranged' judgments to intact pairs. These findings suggest that the left AG supports encoding processes that contribute to aspects of subjective mnemonic experience.

Complex magnetic behaviour and evidence of a superspin glass state in the binary intermetallic compound Er5Pd2

NASA Astrophysics Data System (ADS)

Sharma, Mohit K.; Yadav, Kavita; Mukherjee, K.

2018-05-01

The binary intermetallic compound Er5Pd2 has been investigated using dc and ac magnetic susceptibilities, magnetic memory effect, isothermal magnetization, non-linear dc susceptibility, heat capacity and magnetocaloric effect studies. Interestingly, even though the compound does not show geometrical frustration it undergoes glassy magnetic phase transition below 17.2 K. Investigation of dc magnetization and heat capacity data divulged absence of long-ranged magnetic ordering. Through the magnetic memory effect, time dependent magnetization and ac susceptibility studies it was revealed that the compound undergoes glass-like freezing below 17.2 K. Analysis of frequency dependence of this transition temperature through scaling and Arrhenius law; along with the Mydosh parameter indicate, that the dynamics in Er5Pd2 are due to the presence of strongly interacting superspins rather than individual spins. This phase transition was further investigated by non-linear dc susceptibility and was characterized by static critical exponents γ and δ. Our results indicate that this compound shows the signature of superspin glass at low temperature. Additionally, both conventional and inverse magnetocaloric effect was observed with a large value of magnetic entropy change and relative cooling power. Our results suggest that Er5Pd2 can be classified as a superspin glass system with large magnetocaloric effect.

Tunneling anisotropic magnetoresistance driven by magnetic phase transition.

PubMed

Chen, X Z; Feng, J F; Wang, Z C; Zhang, J; Zhong, X Y; Song, C; Jin, L; Zhang, B; Li, F; Jiang, M; Tan, Y Z; Zhou, X J; Shi, G Y; Zhou, X F; Han, X D; Mao, S C; Chen, Y H; Han, X F; Pan, F

2017-09-06

The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here, we report an alternative approach to obtaining tunneling anisotropic magnetoresistance in α'-FeRh-based junctions driven by the magnetic phase transition of α'-FeRh and resultantly large variation of the density of states in the vicinity of MgO tunneling barrier, referred to as phase transition tunneling anisotropic magnetoresistance. The junctions with only one α'-FeRh magnetic electrode show a magnetoresistance ratio up to 20% at room temperature. Both the polarity and magnitude of the phase transition tunneling anisotropic magnetoresistance can be modulated by interfacial engineering at the α'-FeRh/MgO interface. Besides the fundamental significance, our finding might add a different dimension to magnetic random access memory and antiferromagnet spintronics.Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic tunnel junctions with one α'-FeRh magnetic electrode.

Advanced Mail Systems Scanner Technology. Executive Summary and Appendixes A-E.

DTIC Science & Technology

1980-10-01

data base. 6. Perform color acquisition studies. 7. Investigate address and bar code reading. MASS MEMORY TECHNOLOGY 1. Collect performance data on...area of the 1728-by-2200 ICAS image memory and to transmit the data to any of the three color memories of the Comtal. Function table information can...for printing color images. The software allows the transmission of data from the ICAS frame-store memory via the MCU to the Dicomed. Software test

BLACKCOMB2: Hardware-software co-design for non-volatile memory in exascale systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mudge, Trevor

This work was part of a larger project, Blackcomb2, centered at Oak Ridge National Labs (Jeff Vetter PI) to investigate the opportunities for replacing or supplementing DRAM main memory with nonvolatile memory (NVmemory) in Exascale memory systems. The goal was to reduce the energy consumed by in future supercomputer memory systems and to improve their resiliency. Building on the accomplishments of the original Blackcomb Project, funded in 2010, the goal for Blackcomb2 was to identify, evaluate, and optimize the most promising emerging memory technologies, architecture hardware and software technologies, which are essential to provide the necessary memory capacity, performance, resilience,more » and energy efficiency in Exascale systems. Capacity and energy are the key drivers.« less

Large and reversible inverse magnetocaloric effect in Ni48.1Co2.9Mn35.0In14.0 metamagnetic shape memory microwire

NASA Astrophysics Data System (ADS)

Qu, Y. H.; Cong, D. Y.; Chen, Z.; Gui, W. Y.; Sun, X. M.; Li, S. H.; Ma, L.; Wang, Y. D.

2017-11-01

High-performance magnetocaloric materials should have a large reversible magnetocaloric effect and good heat exchange capability. Here, we developed a Ni48.1Co2.9Mn35.0In14.0 metamagnetic shape memory microwire with a large and reversible inverse magnetocaloric effect. As compared to the bulk counterpart, the microwire shows a better combination of magnetostructural transformation parameters (magnetization difference across transformation ΔM, transformation entropy change ΔStr, thermal hysteresis ΔThys, and transformation interval ΔTint) and thus greatly reduced critical field required for complete and reversible magnetic-field-induced transformation. A strong and reversible metamagnetic transition occurred in the microwire, which facilitates the achievement of large reversible magnetoresponsive effects. Consequently, a large and reversible magnetic-field-induced entropy change ΔSm of 12.8 J kg-1 K-1 under 5 T was achieved in the microwire, which is the highest value reported heretofore in Ni-Mn-based magnetic shape memory wires. Furthermore, since microwires have a high surface/volume ratio, they exhibit very good heat exchange capability. The present Ni48.1Co2.9Mn35.0In14.0 microwire shows great potential for magnetic refrigeration. This study may stimulate further development of high-performance magnetocaloric wires for high-efficiency and environmentally friendly solid-state cooling.

Confident false memories for spatial location are mediated by V1.

PubMed

Karanian, Jessica M; Slotnick, Scott D

2018-06-27

Prior functional magnetic resonance imaging (fMRI) results suggest that true memories, but not false memories, activate early sensory cortex. It is thought that false memories, which reflect conscious processing, do not activate early sensory cortex because these regions are associated with nonconscious processing. We posited that false memories may activate the earliest visual cortical processing region (i.e., V1) when task conditions are manipulated to evoke conscious processing in this region. In an fMRI experiment, abstract shapes were presented to the left or right of fixation during encoding. During retrieval, old shapes were presented at fixation and participants characterized each shape as previously on the "left" or "right" followed by an "unsure"-"sure"-"very sure" confidence rating. False memories for spatial location (i.e., "right"/left or "left"/right trials with "sure" or "very sure" confidence ratings) were associated with activity in bilateral early visual regions, including V1. In a follow-up fMRI-guided transcranial magnetic stimulation (TMS) experiment that employed the same paradigm, we assessed whether V1 activity was necessary for false memory construction. Between the encoding phase and the retrieval phase of each run, TMS (1 Hz, 8 min) was used to target the location of false memory activity (identified in the fMRI experiment) in left V1, right V1, or the vertex (control site). Confident false memories for spatial location were significantly reduced following TMS to V1, as compared to vertex. The results of the present experiments provide convergent evidence that early sensory cortex can contribute to false memory construction under particular task conditions.

A compact physical model for the simulation of pNML-based architectures

NASA Astrophysics Data System (ADS)

Turvani, G.; Riente, F.; Plozner, E.; Schmitt-Landsiedel, D.; Breitkreutz-v. Gamm, S.

2017-05-01

Among emerging technologies, perpendicular Nanomagnetic Logic (pNML) seems to be very promising because of its capability of combining logic and memory onto the same device, scalability, 3D-integration and low power consumption. Recently, Full Adder (FA) structures clocked by a global magnetic field have been experimentally demonstrated and detailed characterizations of the switching process governing the domain wall (DW) nucleation probability Pnuc and time tnuc have been performed. However, the design of pNML architectures represent a crucial point in the study of this technology; this can have a remarkable impact on the reliability of pNML structures. Here, we present a compact model developed in VHDL which enables to simulate complex pNML architectures while keeping into account critical physical parameters. Therefore, such parameters have been extracted from the experiments, fitted by the corresponding physical equations and encapsulated into the proposed model. Within this, magnetic structures are decomposed into a few basic elements (nucleation centers, nanowires, inverters etc.) represented by the according physical description. To validate the model, we redesigned a FA and compared our simulation results to the experiment. With this compact model of pNML devices we have envisioned a new methodology which makes it possible to simulate and test the physical behavior of complex architectures with very low computational costs.

Radiation and Reliability Concerns for Modern Nonvolatile Memory Technology

NASA Technical Reports Server (NTRS)

Oldham, Timothy R.; Friendlich, Mark R.; Kim, Hak S.; Berg, Melanie D.; LaBel, Kenneth A.; Buchner, S. P.; McMorrow, D.; Mavis, D. G.; Eaton, P. H.; Castillo, J.

2011-01-01

Commercial nonvolatile memory technology is attractive for space applications, but radiation issues are serious concerns. In addition, we discuss combined radiation/reliability concerns which are only beginning to be addressed.

Reliable low-power control of ultrafast vortex-core switching with the selectivity in an array of vortex states by in-plane circular-rotational magnetic fields and spin-polarized currents

NASA Astrophysics Data System (ADS)

Kim, Sang-Koog; Lee, Ki-Suk; Yu, Young-Sang; Choi, Youn-Seok

2008-01-01

The authors investigated the technological utility of counterclockwise (CCW) and clockwise (CW) circular-rotating fields (HCCW and HCW) and spin-polarized currents with an angular frequency ωH close to the vortex eigenfrequency ωD, for the reliable, low-power, and selective switching of the bistate magnetization (M) orientations of a vortex core (VC) in an array of soft magnetic nanoelements. CCW and CW circular gyrotropic motions in response to HCCW and HCW, respectively, show remarkably contrasting resonant behaviors, (i.e., extremely large-amplitude resonance versus small-amplitude nonresonance), depending on the M orientation of a given VC. Owing to this asymmetric resonance characteristics, the HCCW(HCW) with ωH˜ωD can be used to effectively switch only the up (down) core to its downward (upward) M orientation, selectively, by sufficiently low field (˜10Oe) and current density (˜107A/cm2). This work provides a reliable, low power, effective means of information storage, information recording, and information readout in vortex-based random access memory, simply called VRAM.

Weak antilocalization effect due to topological surface states in Bi2Se2.1Te0.9

NASA Astrophysics Data System (ADS)

Shrestha, K.; Graf, D.; Marinova, V.; Lorenz, B.; Chu, C. W.

2017-10-01

We have investigated the weak antilocalization (WAL) effect in the p-type Bi2Se2.1Te0.9 topological system. The magnetoconductance shows a cusp-like feature at low magnetic fields, indicating the presence of the WAL effect. The WAL curves measured at different tilt angles merge together when they are plotted as a function of the normal field components, showing that surface states dominate the magnetoconductance in the Bi2Se2.1Te0.9 crystal. We have calculated magnetoconductance per conduction channel and applied the Hikami-Larkin-Nagaoka formula to determine the physical parameters that characterize the WAL effect. The number of conduction channels and the phase coherence length do not change with temperature up to T = 5 K. In addition, the sample shows a large positive magnetoresistance that reaches 1900% under a magnetic field of 35 T at T = 0.33 K with no sign of saturation. The magnetoresistance value decreases with both increasing temperature and tilt angle of the sample surface with respect to the magnetic field. The large magnetoresistance of topological insulators can be utilized in future technology such as sensors and memory devices.

Development of 3-Year Roadmap to Transform the Discipline of Systems Engineering

DTIC Science & Technology

2010-03-31

quickly humans could physically construct them. Indeed, magnetic core memory was entirely constructed by human hands until it was superseded by...For their mainframe computers, IBM develops the applications, operating system, computer hardware and microprocessors (off the shelf standard memory ...processor developers work on potential computational and memory pipelines to support the required performance capabilities and use the available transistors

Working Ni-Mn-Ga Single Crystals in a Magnetic Field Against a Spring Load

NASA Astrophysics Data System (ADS)

Lindquist, P. G.; Müllner, P.

2015-03-01

This research characterizes ferromagnetic shape memory elements for use as mechanical actuators. A single crystal of Ni-Mn-Ga was pre-strained in compression from 0 to 6 % and then the shape was recovered with a magnetic field perpendicular to the loading direction while working against a pair of springs. The magnetic field was raised from 0 to 0.64 MA/m and then reduced to zero field. Eight pairs of springs with combined spring constants ranging from 14.3 to 269.4 N/mm were used. When the magnetic field was on, the sample expanded against the springs due to magnetic field-induced strain. When the magnetic field was turned off, the springs compressed the sample back to the initial size before the next cycle. During each cycle, force and displacement were measured and the specific work was computed. Specific work increased with the applied magnetic field and the pre-strain, with a maximum of 14 kJ/m3 at 4.5 % pre-strain and 0.64 MA/m. This value is five times less than the values suggested in the literature which were inferred from stress-strain curves measured under various magnetic fields. The spring prescribes the load-displacement path of the magnetic shape memory element and controls the work output of the actuator.

Characterization of Au/PbTi0.5Fe0.5O3/Si structure for possible multiferroic based non-volatile memory applications

NASA Astrophysics Data System (ADS)

Nawaz, S.; Roy, S.; Tulapurkar, A. A.; Palkar, V. R.

2017-03-01

Magnetoelectric multiferroic PbTi0.5Fe0.5O3 films are deposited on a ⟨100⟩ conducting p-Si substrate without any buffer layer by using pulsed laser deposition and characterized for possible non-volatile memory applications. Their crystalline structure and surface morphology were characterized by using x-ray diffraction and AFM techniques. HRTEM was employed to determine the film-substrate interface. The electronic structure of the film was investigated by XPS, and no signature of metal was found for all the elements. The chemical shift of the Ti 2p XPS peak is attributed to the replacement of Ti with Fe in the PbTiO3 matrix. Piezoelectric force microscopy (PFM) results indicate the 180° phase shift of ferroelectric polarization. The upward self-polarization phenomenon is also observed in the PFM study. Magnetic and magneto-electric coupling measurements were carried out to confirm the magnetic nature and electro-magnetic coupling characteristics. C-V measurements exhibit clock-wise hysteresis loops with a maximum memory window of 1.2 V and a sweep voltage of ±7 V. This study could influence the fabrication of silicon compatible multiple memory device structures.

Twin-enhanced magnetic torque

NASA Astrophysics Data System (ADS)

Hobza, Anthony; García-Cervera, Carlos J.; Müllner, Peter

2018-07-01

Magnetic shape memory alloys experience magnetic-field-induced torque due to magnetocrystalline anisotropy and shape anisotropy. In a homogeneous magnetic field, torque results in bending of long samples. This study investigates the torque on a single crystal of Ni-Mn-Ga magnetic shape memory alloy constrained with respect to bending in an external magnetic field. The dependence of the torque on external magnetic field magnitude, strain, and twin boundary structure was studied experimentally and with computer simulations. With increasing magnetic field, the torque increased until it reached a maximum near 700 mT. Above 200 mT, the torque was not symmetric about the equilibrium orientation for a sample with one twin boundary. The torque on two specimen with equal strain but different twin boundary structures varied systematically with the spatial arrangement of crystallographic twins. Numerical simulations show that twin boundaries suppress the formation of 180° domains if the direction of easy magnetization between two twin boundaries is parallel to a free surface and the magnetic field is perpendicular to that surface. For a particular twin microstructure, the torque decreases with increasing strain by a factor of six due to the mutual compensation of magnetocrystalline and shape anisotropy. When free rotation is suppressed such as in transducers of magneto-mechanical actuators, magnetic-field-induced torque creates strong bending forces, which may cause friction and failure under cyclic loading.

45 CFR 160.103 - Definitions.

Code of Federal Regulations, 2012 CFR

2012-10-01

..., the following definitions apply to this subchapter: Act means the Social Security Act. ANSI stands for... required documents. Electronic media means: (1) Electronic storage media including memory devices in computers (hard drives) and any removable/transportable digital memory medium, such as magnetic tape or disk...

45 CFR 160.103 - Definitions.

Code of Federal Regulations, 2011 CFR

2011-10-01

..., the following definitions apply to this subchapter: Act means the Social Security Act. ANSI stands for... required documents. Electronic media means: (1) Electronic storage media including memory devices in computers (hard drives) and any removable/transportable digital memory medium, such as magnetic tape or disk...

45 CFR 160.103 - Definitions.

Code of Federal Regulations, 2010 CFR

2010-10-01

..., the following definitions apply to this subchapter: Act means the Social Security Act. ANSI stands for... required documents. Electronic media means: (1) Electronic storage media including memory devices in computers (hard drives) and any removable/transportable digital memory medium, such as magnetic tape or disk...

Magnetic and electric control of multiferroic properties in monodomain crystals of BiFeO3

NASA Astrophysics Data System (ADS)

Tokunaga, Masashi

One of the important goals for multiferroics is to develop the non-volatile magnetic memories that can be controlled by electric fields with low power consumption. Among numbers of multiferroic materials, BiFeO3 has been the most extensively studied because of its substantial ferroelectric polarization and magnetic order up to above room temperature. Recent high field experiments on monodomain crystals of BiFeO3 revealed the existence of additional electric polarization normal to the three-fold rotational axis. This transverse component is coupled with the cycloidal magnetic domain, and hence, can be controlled by external magnetic fields. Application of electric fields normal to the trigonal axis modifies volume fraction of these multiferroic domains, which involves change in resistance of the sample, namely exhibits the bipolar resistive memory effect. In this talk, I will introduce the effects of magnetic and electric fields on magnetoelectric and structural properties observed in monodomain crystals of BiFeO3. This work was supported by JSPS Grant Number 16K05413 and by a research Grant from The Murata Science Foundation.

Nanoscale magneto-structural coupling in as-deposited and freestanding single-crystalline Fe7Pd3 ferromagnetic shape memory alloy thin films

PubMed Central

Landgraf, Anja; Jakob, Alexander M; Ma, Yanhong; Mayr, Stefan G

2013-01-01

Ferromagnetic shape memory alloys are characterized by strong magneto-mechanical coupling occurring at the atomic scale causing large magnetically inducible strains at the macroscopic level. Employing combined atomic and magnetic force microscopy studies at variable temperature, we systematically explore the relation between the magnetic domain pattern and the underlying structure for as-deposited and freestanding single-crystalline Fe7Pd3 thin films across the martensite–austenite transition. We find experimental evidence that magnetic domain appearance is strongly affected by the presence and absence of nanotwinning. While the martensite–austenite transition upon temperature variation of as-deposited films is clearly reflected in topography by the presence and absence of a characteristic surface corrugation pattern, the magnetic domain pattern is hardly affected. These findings are discussed considering the impact of significant thermal stresses arising in the austenite phase. Freestanding martensitic films reveal a hierarchical structure of micro- and nanotwinning. The associated domain organization appears more complex, since the dominance of magnetic energy contributors alters within this length scale regime. PMID:27877596

Shape memory system with integrated actuation using embedded particles

DOEpatents

Buckley, Patrick R [New York, NY; Maitland, Duncan J [Pleasant Hill, CA

2009-09-22

A shape memory material with integrated actuation using embedded particles. One embodiment provides a shape memory material apparatus comprising a shape memory material body and magnetic pieces in the shape memory material body. Another embodiment provides a method of actuating a device to perform an activity on a subject comprising the steps of positioning a shape memory material body in a desired position with regard to the subject, the shape memory material body capable of being formed in a specific primary shape, reformed into a secondary stable shape, and controllably actuated to recover the specific primary shape; including pieces in the shape memory material body; and actuating the shape memory material body using the pieces causing the shape memory material body to be controllably actuated to recover the specific primary shape and perform the activity on the subject.

Shape memory system with integrated actuation using embedded particles

DOEpatents

Buckley, Patrick R [New York, NY; Maitland, Duncan J [Pleasant Hill, CA

2012-05-29

A shape memory material with integrated actuation using embedded particles. One embodiment provides a shape memory material apparatus comprising a shape memory material body and magnetic pieces in the shape memory material body. Another embodiment provides a method of actuating a device to perform an activity on a subject comprising the steps of positioning a shape memory material body in a desired position with regard to the subject, the shape memory material body capable of being formed in a specific primary shape, reformed into a secondary stable shape, and controllably actuated to recover the specific primary shape; including pieces in the shape memory material body; and actuating the shape memory material body using the pieces causing the shape memory material body to be controllably actuated to recover the specific primary shape and perform the activity on the subject.

Shape memory system with integrated actuation using embedded particles

DOEpatents

Buckley, Patrick R.; Maitland, Duncan J.

2014-04-01

A shape memory material with integrated actuation using embedded particles. One embodiment provides a shape memory material apparatus comprising a shape memory material body and magnetic pieces in the shape memory material body. Another embodiment provides a method of actuating a device to perform an activity on a subject comprising the steps of positioning a shape memory material body in a desired position with regard to the subject, the shape memory material body capable of being formed in a specific primary shape, reformed into a secondary stable shape, and controllably actuated to recover the specific primary shape; including pieces in the shape memory material body; and actuating the shape memory material body using the pieces causing the shape memory material body to be controllably actuated to recover the specific primary shape and perform the activity on the subject.

Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Kyungmi; Lee, Kyung-Jin, E-mail: kj-lee@korea.ac.kr; Department of Materials Science and Engineering, Korea University, Seoul 136-713

2015-08-07

We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability factor to switching current. We find that the switching mode of an edge-damaged cell is different from that of an undamaged cell, which results in a sizable reduction in the switching current. Together with a marginal reduction of the thermal stability factor of an edge-damaged cell, this feature makes the STT efficiency large. Our results suggest that a precise edge control is viable formore » the optimization of STT-MRAM.« less

Is the Use of Information and Communication Technology Related to Performance in Working Memory Tasks? Evidence from Seventh-Grade Students

ERIC Educational Resources Information Center

Garcia, Lucy; Nussbaum, Miguel; Preiss, David D.

2011-01-01

The main purpose of this study was to assess whether seventh-grade students use of information and communication technology (ICT) was related to performance on working memory tasks. In addition, the study tested whether the relationship between ICT use and performance on working memory tasks interacted with seventh-grade students' socioeconomic…

Incorporation of Fiber Bragg Sensors for Shape Memory Polyurethanes Characterization.

PubMed

Alberto, Nélia; Fonseca, Maria A; Neto, Victor; Nogueira, Rogério; Oliveira, Mónica; Moreira, Rui

2017-11-11

Shape memory polyurethanes (SMPUs) are thermally activated shape memory materials, which can be used as actuators or sensors in applications including aerospace, aeronautics, automobiles or the biomedical industry. The accurate characterization of the memory effect of these materials is therefore mandatory for the technology's success. The shape memory characterization is normally accomplished using mechanical testing coupled with a heat source, where a detailed knowledge of the heat cycle and its influence on the material properties is paramount but difficult to monitor. In this work, fiber Bragg grating (FBG) sensors were embedded into SMPU samples aiming to study and characterize its shape memory effect. The samples were obtained by injection molding, and the entire processing cycle was successfully monitored, providing a process global quality signature. Moreover, the integrity and functionality of the FBG sensors were maintained during and after the embedding process, demonstrating the feasibility of the technology chosen for the purpose envisaged. The results of the shape memory effect characterization demonstrate a good correlation between the reflected FBG peak with the temperature and induced strain, proving that this technology is suitable for this particular application.

SenseCam: A new tool for memory rehabilitation?

PubMed

Dubourg, L; Silva, A R; Fitamen, C; Moulin, C J A; Souchay, C

2016-12-01

The emergence of life-logging technologies has led neuropsychologist to focus on understanding how this new technology could help patients with memory disorders. Despite the growing number of studies using life-logging technologies, a theoretical framework supporting its effectiveness is lacking. This review focuses on the use of life-logging in the context of memory rehabilitation, particularly the use of SenseCam, a wearable camera allowing passive image capture. In our opinion, reviewing SenseCam images can be effective for memory rehabilitation only if it provides more than an assessment of prior occurrence in ways that reinstates previous thoughts, feelings and sensory information, thus stimulating recollection. Considering the fact that, in memory impairment, self-initiated processes are impaired, we propose that the environmental support hypothesis can explain the value of SenseCam for memory retrieval. Twenty-five research studies were selected for this review and despite the general acceptance of the value of SenseCam as a memory technique, only a small number of studies focused on recollection. We discuss the usability of this tool to improve episodic memory and in particular, recollection. Copyright © 2016 Elsevier Masson SAS. All rights reserved.

Magnetic skyrmions on a two-lane racetrack

NASA Astrophysics Data System (ADS)

Müller, Jan

2017-02-01

Magnetic skyrmions are particle-like textures in magnetization, characterized by a topological winding number. Nanometer-scale skyrmions have been observed at room temperature in magnetic multilayer structures. The combination of their small size, topological quantization and their efficient electric manipulation makes them interesting candidates for information carriers in high-performance memory devices. A skyrmion racetrack memory has been suggested, in which information is encoded in the distance between skyrmions moving in a one-dimensional nanostrip. Here, I propose an alternative design where skyrmions move in two (or more) parallel lanes and the information is stored in the lane number of each skyrmion. Such a multilane track can be constructed by controlling the height profile of the nanostrip. Repulsive skyrmion-skyrmion interactions in narrow nanostrips guarantee that skyrmions on different lanes cannot pass each other. Current pulses can be used to induce a lane change, and combining these elements provides a robust, efficient design for skyrmion-based storage devices.

Tunnel junctions with multiferroic barriers

NASA Astrophysics Data System (ADS)

Gajek, Martin; Bibes, Manuel; Fusil, Stéphane; Bouzehouane, Karim; Fontcuberta, Josep; Barthélémy, Agnès; Fert, Albert

2007-04-01

Multiferroics are singular materials that can exhibit simultaneously electric and magnetic orders. Some are ferroelectric and ferromagnetic and provide the opportunity to encode information in electric polarization and magnetization to obtain four logic states. However, such materials are rare and schemes allowing a simple electrical readout of these states have not been demonstrated in the same device. Here, we show that films of La0.1Bi0.9MnO3 (LBMO) are ferromagnetic and ferroelectric, and retain both ferroic properties down to a thickness of 2nm. We have integrated such ultrathin multiferroic films as barriers in spin-filter-type tunnel junctions that exploit the magnetic and ferroelectric degrees of freedom of LBMO. Whereas ferromagnetism permits read operations reminiscent of magnetic random access memories (MRAM), the electrical switching evokes a ferroelectric RAM write operation. Significantly, our device does not require the destructive ferroelectric readout, and therefore represents an advance over the original four-state memory concept based on multiferroics.

Tunnel junctions with multiferroic barriers.

PubMed

Gajek, Martin; Bibes, Manuel; Fusil, Stéphane; Bouzehouane, Karim; Fontcuberta, Josep; Barthélémy, Agnès; Fert, Albert

2007-04-01

Multiferroics are singular materials that can exhibit simultaneously electric and magnetic orders. Some are ferroelectric and ferromagnetic and provide the opportunity to encode information in electric polarization and magnetization to obtain four logic states. However, such materials are rare and schemes allowing a simple electrical readout of these states have not been demonstrated in the same device. Here, we show that films of La(0.1)Bi(0.9)MnO(3) (LBMO) are ferromagnetic and ferroelectric, and retain both ferroic properties down to a thickness of 2 nm. We have integrated such ultrathin multiferroic films as barriers in spin-filter-type tunnel junctions that exploit the magnetic and ferroelectric degrees of freedom of LBMO. Whereas ferromagnetism permits read operations reminiscent of magnetic random access memories (MRAM), the electrical switching evokes a ferroelectric RAM write operation. Significantly, our device does not require the destructive ferroelectric readout, and therefore represents an advance over the original four-state memory concept based on multiferroics.

Large reversible entropy change at the inverse magnetocaloric effect in Ni-Co-Mn-Ga-In magnetic shape memory alloys

NASA Astrophysics Data System (ADS)

Emre, Baris; Yüce, Süheyla; Stern-Taulats, Enric; Planes, Antoni; Fabbrici, Simone; Albertini, Franca; Mañosa, Lluís

2013-06-01

Calorimetry under magnetic field has been used to study the inverse magnetocaloric effect in Ni-Co-Mn-Ga-In magnetic shape memory alloys. It is shown that the energy dissipated during a complete transformation loop only represents a small fraction (5% to 7%) of the latent heat of the martensitic transition. It is found that the entropy values obtained from isofield temperature scans agree well with those obtained from isothermal magnetic field scans. The reproducibility of the magnetocaloric effect has been studied from isothermal measurements. Reproducible entropy values under field cycling have been found within a temperature interval bounded by the start temperature of the forward transition at zero field and the start temperature of the reverse transition under applied field. Large reversible entropy changes around 11 J/kg K have been found for fields up to 6 T.

Aging, memory, and nonhierarchical energy landscape of spin jam

NASA Astrophysics Data System (ADS)

Samarakoon, Anjana; Sato, Taku J.; Chen, Tianran; Chern, Gai-Wei; Yang, Junjie; Klich, Israel; Sinclair, Ryan; Zhou, Haidong; Lee, Seung-Hun

2016-10-01

The notion of complex energy landscape underpins the intriguing dynamical behaviors in many complex systems ranging from polymers, to brain activity, to social networks and glass transitions. The spin glass state found in dilute magnetic alloys has been an exceptionally convenient laboratory frame for studying complex dynamics resulting from a hierarchical energy landscape with rugged funnels. Here, we show, by a bulk susceptibility and Monte Carlo simulation study, that densely populated frustrated magnets in a spin jam state exhibit much weaker memory effects than spin glasses, and the characteristic properties can be reproduced by a nonhierarchical landscape with a wide and nearly flat but rough bottom. Our results illustrate that the memory effects can be used to probe different slow dynamics of glassy materials, hence opening a window to explore their distinct energy landscapes.

Enhance, delete, incept: Manipulating hippocampus-dependent memories☆

PubMed Central

Spiers, Hugo J.; Bendor, Daniel

2014-01-01

Here we provide a brief overview of recent research on memory manipulation. We focus primarily on memories for which the hippocampus is thought to be required due to its central importance in the study of memory. The repertoire of methods employed is expanding and includes optogenetics, transcranial stimulation, deep brain stimulation, cued reactivation during sleep and the use of pharmacological agents. In addition, the possible mechanisms underlying these memory changes have been investigated using techniques such as single unit recording and functional magnetic resonance imaging (fMRI). This article is part of a Special Issue entitled ‘Memory enhancement’. PMID:24397964

A functional magnetic resonance imaging study mapping the episodic memory encoding network in temporal lobe epilepsy

PubMed Central

Sidhu, Meneka K.; Stretton, Jason; Winston, Gavin P.; Bonelli, Silvia; Centeno, Maria; Vollmar, Christian; Symms, Mark; Thompson, Pamela J.; Koepp, Matthias J.

2013-01-01

Functional magnetic resonance imaging has demonstrated reorganization of memory encoding networks within the temporal lobe in temporal lobe epilepsy, but little is known of the extra-temporal networks in these patients. We investigated the temporal and extra-temporal reorganization of memory encoding networks in refractory temporal lobe epilepsy and the neural correlates of successful subsequent memory formation. We studied 44 patients with unilateral temporal lobe epilepsy and hippocampal sclerosis (24 left) and 26 healthy control subjects. All participants performed a functional magnetic resonance imaging memory encoding paradigm of faces and words with subsequent out-of-scanner recognition assessments. A blocked analysis was used to investigate activations during encoding and neural correlates of subsequent memory were investigated using an event-related analysis. Event-related activations were then correlated with out-of-scanner verbal and visual memory scores. During word encoding, control subjects activated the left prefrontal cortex and left hippocampus whereas patients with left hippocampal sclerosis showed significant additional right temporal and extra-temporal activations. Control subjects displayed subsequent verbal memory effects within left parahippocampal gyrus, left orbitofrontal cortex and fusiform gyrus whereas patients with left hippocampal sclerosis activated only right posterior hippocampus, parahippocampus and fusiform gyrus. Correlational analysis showed that patients with left hippocampal sclerosis with better verbal memory additionally activated left orbitofrontal cortex, anterior cingulate cortex and left posterior hippocampus. During face encoding, control subjects showed right lateralized prefrontal cortex and bilateral hippocampal activations. Patients with right hippocampal sclerosis showed increased temporal activations within the superior temporal gyri bilaterally and no increased extra-temporal areas of activation compared with control subjects. Control subjects showed subsequent visual memory effects within right amygdala, hippocampus, fusiform gyrus and orbitofrontal cortex. Patients with right hippocampal sclerosis showed subsequent visual memory effects within right posterior hippocampus, parahippocampal and fusiform gyri, and predominantly left hemisphere extra-temporal activations within the insula and orbitofrontal cortex. Correlational analysis showed that patients with right hippocampal sclerosis with better visual memory activated the amygdala bilaterally, right anterior parahippocampal gyrus and left insula. Right sided extra-temporal areas of reorganization observed in patients with left hippocampal sclerosis during word encoding and bilateral lateral temporal reorganization in patients with right hippocampal sclerosis during face encoding were not associated with subsequent memory formation. Reorganization within the medial temporal lobe, however, is an efficient process. The orbitofrontal cortex is critical to subsequent memory formation in control subjects and patients. Activations within anterior cingulum and insula correlated with better verbal and visual subsequent memory in patients with left and right hippocampal sclerosis, respectively, representing effective extra-temporal recruitment. PMID:23674488

Rock Magnetism: Successes and Mysteries

NASA Astrophysics Data System (ADS)

Dunlop, D. J.

2011-12-01

Louis Néel once proposed making ships "invisible" (i.e., magnetically undetectable) by giving them a permanent or remanent magnetism that would cancel the signal induced by the Earth's magnetic field. Like much of rock magnetism, this borders on the magical. Rocks possess a magnetic memory that verges on the phenomenal. An adequate magnetic lifetime for your credit card is until its expiry date and one must avoid exposure to magnetic fields and heat. But a rock's magnetic memory is forever, and the recipe for that durability includes, for igneous and metamorphic rocks, exposure to ancient fields while hot - near the Curie temperature in fact. The thermal remanent magnetism (TRM) thus produced is largely immune to later field changes at lower temperatures although luckily a fraction - a partial TRM overprint - does record later heating events, e.g., burial during major orogenies. When we lift the veil and look closely, on a microscale or nanoscale, it is perplexing to understand why paleomagnetism works so well when rocks seemingly contain so few of Néel's ideal recorders: single-domain grains with tightly coupled atomic spins. In larger grains with multiple domains, the walls between neighbouring domains move readily, like dislocations in crystals, enlarging some domains at the expense of others. This mutability makes any magnetic memory of multi-domain grains suspect. But around the threshold between single-domain and multi-domain structures - a specific grain size that varies widely from one magnetic mineral to another - there are recent predictions and observations of novel structures, including linked magnetic moments of nearby grains and interfacial moments of exsolved phases, that could go some way towards explaining why single-domain-like behaviour is so widespread. Many magnetic properties show an almost continuous variation with grain size, quite unlike the expected discontinuity at the single-domain threshold. Among these is initial susceptibility which governs a rock's induced response to weak fields like the Earth's. In particular, the Hopkinson peak in susceptibility near the Curie temperature - a potential source of "missing magnetism" in the deep lithosphere - increases steadily over at least a decade of decreasing grain size in magnetite. Single-domain recorders, in addition to their strong and long-lasting memory, have the property of TRM additivity and independence. This makes possible the Thellier method of determining paleofield intensity, a much more demanding undertaking than tracking paleomagnetic field directions, in which the ancient magnetic moment is gradually replaced by a set of partial TRMs produced in a known laboratory field. Partial TRMs produced in nature by heating during deep burial are also additive and independent. The temperature at which these overprints are removed in the laboratory yields - after correction for the very different natural and laboratory heating times - the burial temperature. This is the basis of magnetic paleothermometry. The interplay of time and temperature in TRM when combined with thermal history models provides estimates of when the global magnetic field of a planet, e.g., Mars, was born and died. But the grand conclusions so important to geophysics rest ultimately on the fidelity of the microscopic recorders in rocks and here, despite many advances, our understanding is still a work in progress.

Dependence of Interfacial Dzyaloshinskii-Moriya Interaction on Layer Thicknesses in Ta /Co -Fe -B /TaOx Heterostructures from Brillouin Light Scattering

NASA Astrophysics Data System (ADS)

Chaurasiya, Avinash Kumar; Choudhury, Samiran; Sinha, Jaivardhan; Barman, Anjan

2018-01-01

The interfacial Dzyaloshinskii-Moriya interaction (IDMI) has recently drawn extensive research interest due to its fundamental role in stabilizing chiral spin textures in ultrathin ferromagnets, which are suitable candidates for future magnetic-memory devices. Here, we explore the ferromagnetic and heavy-metal layer-thickness dependence of IDMI in technologically important Ta /Co20Fe60B20/TaOx heterostructures by measuring nonreciprocity in spin-wave frequency using the Brillouin light-scattering technique. The observed value of the IDMI constant agrees with that obtained from a separate measurement of in-plane angular dependence of frequency nonreciprocity, which is also in good agreement with the theory predicted by Cortes-Ortuno and Landeros. Linear scaling behavior of IDMI with the inverse of Co-Fe-B thicknesses suggests that IDMI originates primarily from the interface in these heterostructures, whereas we observe a weak dependence of Ta thickness on the strength of IDMI. Importantly, the observed value of the IDMI constant is reasonably large by a factor of 3 compared to annealed Ta /Co -Fe -B /MgO heterostructures. We propose that the observation of large IDMI is likely due to the absence of boron diffusion towards the Ta /Co -Fe -B interface as the heterostructures are as deposited. Our detailed investigation opens up a route to designing thin-film heterostructures with the tailored IDMI constant for controlling Skyrmion-based magnetic-memory devices.

Effective equations for the precession dynamics of electron spins and electron-impurity correlations in diluted magnetic semiconductors

NASA Astrophysics Data System (ADS)

Cygorek, M.; Axt, V. M.

2015-08-01

Starting from a quantum kinetic theory for the spin dynamics in diluted magnetic semiconductors, we derive simplified equations that effectively describe the spin transfer between carriers and magnetic impurities for an arbitrary initial impurity magnetization. Taking the Markov limit of these effective equations, we obtain good quantitative agreement with the full quantum kinetic theory for the spin dynamics in bulk systems at high magnetic doping. In contrast, the standard rate description where the carrier-dopant interaction is treated according to Fermi’s golden rule, which involves the assumption of a short memory as well as a perturbative argument, has been shown previously to fail if the impurity magnetization is non-zero. The Markov limit of the effective equations is derived, assuming only a short memory, while higher order terms are still accounted for. These higher order terms represent the precession of the carrier-dopant correlations in the effective magnetic field due to the impurity spins. Numerical calculations show that the Markov limit of our effective equations reproduces the results of the full quantum kinetic theory very well. Furthermore, this limit allows for analytical solutions and for a physically transparent interpretation.

Study of magnetic field distribution in anisotropic single twin-boundary magnetic shape memory (MSM) element in actuators

NASA Astrophysics Data System (ADS)

Gabdullin, N.; Khan, S. H.

2017-10-01

Magnetic shape memory effect exhibited by certain alloys at room temperature is known for almost 20 years. The most studied MSM alloys are Ni-Mn-Ga alloys which exhibit up to 12% magnetic field-induced strain (change in shape) depending on microstructure. A multibillion cycle operation without malfunction along with their “smart” properties make them very promising for application in electromagnetic (EM) actuators and sensors. However, considerable twinning stress of MSM crystals resulting in magneto-mechanical hysteresis decreases the efficiency and output force of MSM actuators. Whereas twinning stress of conventional MSM crystals has been significantly decreased over the years, novel crystals with Type II twin boundaries (TBs) possess even lower twinning stress. Unfortunately, the microstructure of MSM crystals with very low twinning stress tends to be unstable leading to their rapid crack growth. Whilst this phenomenon has been studied experimentally, the magnetic field distribution in anisotropic single twin-boundary MSM elements has not been considered yet. This paper analyses the magnetic field distribution in two-variant single twin-boundary MSM elements and discusses its effects on magnetic field-induced stress acting on the twin boundary.

Functional magnetic resonance imaging of semantic memory as a presymptomatic biomarker of Alzheimer's disease risk.

PubMed

Sugarman, Michael A; Woodard, John L; Nielson, Kristy A; Seidenberg, Michael; Smith, J Carson; Durgerian, Sally; Rao, Stephen M

2012-03-01

Extensive research efforts have been directed toward strategies for predicting risk of developing Alzheimer's disease (AD) prior to the appearance of observable symptoms. Existing approaches for early detection of AD vary in terms of their efficacy, invasiveness, and ease of implementation. Several non-invasive magnetic resonance imaging strategies have been developed for predicting decline in cognitively healthy older adults. This review will survey a number of studies, beginning with the development of a famous name discrimination task used to identify neural regions that participate in semantic memory retrieval and to test predictions of several key theories of the role of the hippocampus in memory. This task has revealed medial temporal and neocortical contributions to recent and remote memory retrieval, and it has been used to demonstrate compensatory neural recruitment in older adults, apolipoprotein E ε4 carriers, and amnestic mild cognitive impairment patients. Recently, we have also found that the famous name discrimination task provides predictive value for forecasting episodic memory decline among asymptomatic older adults. Other studies investigating the predictive value of semantic memory tasks will also be presented. We suggest several advantages associated with the use of semantic processing tasks, particularly those based on person identification, in comparison to episodic memory tasks to study AD risk. Future directions for research and potential clinical uses of semantic memory paradigms are also discussed. This article is part of a Special Issue entitled: Imaging Brain Aging and Neurodegenerative disease. Copyright © 2011 Elsevier B.V. All rights reserved.

Spatial working memory in heavy cannabis users: a functional magnetic resonance imaging study.

PubMed

Kanayama, Gen; Rogowska, Jadwiga; Pope, Harrison G; Gruber, Staci A; Yurgelun-Todd, Deborah A

2004-11-01

Many neuropsychological studies have documented deficits in working memory among recent heavy cannabis users. However, little is known about the effects of cannabis on brain activity. We assessed brain function among recent heavy cannabis users while they performed a working memory task. Functional magnetic resonance imaging was used to examine brain activity in 12 long-term heavy cannabis users, 6-36 h after last use, and in 10 control subjects while they performed a spatial working memory task. Regional brain activation was analyzed and compared using statistical parametric mapping techniques. Compared with controls, cannabis users exhibited increased activation of brain regions typically used for spatial working memory tasks (such as prefrontal cortex and anterior cingulate). Users also recruited additional regions not typically used for spatial working memory (such as regions in the basal ganglia). These findings remained essentially unchanged when re-analyzed using subjects' ages as a covariate. Brain activation showed little or no significant correlation with subjects' years of education, verbal IQ, lifetime episodes of cannabis use, or urinary cannabinoid levels at the time of scanning. Recent cannabis users displayed greater and more widespread brain activation than normal subjects when attempting to perform a spatial working memory task. This observation suggests that recent cannabis users may experience subtle neurophysiological deficits, and that they compensate for these deficits by "working harder"-calling upon additional brain regions to meet the demands of the task.

Analysis of decoherence mechanisms in a single-atom quantum memory

NASA Astrophysics Data System (ADS)

Koerber, Matthias; Langenfeld, Stefan; Morin, Olivier; Neuzner, Andreas; Ritter, Stephan; Rempe, Gerhard

2017-04-01

While photons are ideal for the transmission of quantum information, they require dedicated memories for long-term storage. The challenge for such a photonic quantum memory is the combination of an efficient light-matter interface with a low-decoherence encoding. To increase the time before the quantum information is lost, a thorough analysis of the relevant decoherence mechanisms is indispensable. Our optical quantum memory consists of a single rubidium atom trapped in a two dimensional optical lattice in a high-finesse Fabry-Perot-type optical resonator. The qubit is initially stored in a superposition of Zeeman states, making magnetic field fluctuations the dominant source of decoherence. The impact to this type of noise is greatly reduced by transferring the qubit into a subspace less susceptible to magnetic field fluctuations. In this configuration, the achievable coherence times are no longer limited by those fluctuations, but decoherence mechanisms induced by the trapping beams pose a new limit. We will discuss the origin and magnitude of the relevant effects and strategies for possible resolutions.

States of curiosity modulate hippocampus-dependent learning via the dopaminergic circuit.

PubMed

Gruber, Matthias J; Gelman, Bernard D; Ranganath, Charan

2014-10-22

People find it easier to learn about topics that interest them, but little is known about the mechanisms by which intrinsic motivational states affect learning. We used functional magnetic resonance imaging to investigate how curiosity (intrinsic motivation to learn) influences memory. In both immediate and one-day-delayed memory tests, participants showed improved memory for information that they were curious about and for incidental material learned during states of high curiosity. Functional magnetic resonance imaging results revealed that activity in the midbrain and the nucleus accumbens was enhanced during states of high curiosity. Importantly, individual variability in curiosity-driven memory benefits for incidental material was supported by anticipatory activity in the midbrain and hippocampus and by functional connectivity between these regions. These findings suggest a link between the mechanisms supporting extrinsic reward motivation and intrinsic curiosity and highlight the importance of stimulating curiosity to create more effective learning experiences. Copyright © 2014 Elsevier Inc. All rights reserved.

Results from the First Two Flights of the Static Computer Memory Integrity Testing Experiment

NASA Technical Reports Server (NTRS)

Hancock, Thomas M., III

1999-01-01

This paper details the scientific objectives, experiment design, data collection method, and post flight analysis following the first two flights of the Static Computer Memory Integrity Testing (SCMIT) experiment. SCMIT is designed to detect soft-event upsets in passive magnetic memory. A soft-event upset is a change in the logic state of active or passive forms of magnetic memory, commonly referred to as a "Bitflip". In its mildest form a soft-event upset can cause software exceptions, unexpected events, start spacecraft safeing (ending data collection) or corrupted fault protection and error recovery capabilities. In it's most severe form loss of mission or spacecraft can occur. Analysis after the first flight (in 1991 during STS-40) identified possible soft-event upsets to 25% of the experiment detectors. Post flight analysis after the second flight (in 1997 on STS-87) failed to find any evidence of soft-event upsets. The SCMIT experiment is currently scheduled for a third flight in December 1999 on STS-101.

The cognitive neuroscience of true and false memories.

PubMed

Johnson, Marcia K; Raye, Carol L; Mitchell, Karen J; Ankudowich, Elizabeth

2012-01-01

Of central relevance to the recovered/false memory debate is understanding the factors that cause us to believe that a mental experience is a memory of an actual past experience. According to the source monitoring framework (SMF), memories are attributions that we make about our mental experiences based on their subjective qualities, our prior knowledge and beliefs, our motives and goals, and the social context. From this perspective, we discuss cognitive behavioral studies using both objective (e.g., recognition, source memory) and subjective (e.g., ratings of memory characteristics) measures that provide much information about the encoding, revival and monitoring processes that yield both true and false memories. The chapter also considers how neuroimaging findings, especially from functional magnetic resonance imaging studies, are contributing to our understanding of the relation between memory and reality.

Aging, rejuvenation, and memory effects in short-range Ising spin glass: Cu0.5Co0.5Cl2-FeCl3 graphite bi-intercalation compound

NASA Astrophysics Data System (ADS)

Suzuki, M.; Suzuki, I. S.

2004-10-01

Non-equilibrium aging dynamics in 3D Ising spin glass Cu0.5Co0.5Cl2-FeCl3 GBIC has been studied by zero-field cooled (ZFC) magnetization and low frequency AC magnetic susceptibility ( f = 0.05 Hz), where Tg = 3.92 ± 0.11 K. The time dependence of the relaxation rate S( t) = (1/ H)dM_ZFC/dln t for the ZFC magnetization after the ZFC aging protocol, shows a peak at a characteristic time t cr near a wait time t w (aging behavior), corresponding to a crossover from quasi equilibrium dynamics to non-equilibrium. The time t cr strongly depends on t w , temperature ( T), magnetic field ( H), and the temperature shift (Δ T). The rejuvenation effect is observed in both χ^' and χ^'' under the T-shift and H-shift procedures. The memory of the specific spin configurations imprinted during the ZFC aging protocol can be recalled when the system is re-heated at a constant heating rate. The aging, rejuvenation, and memory effects observed in the present system are discussed in terms of the scaling concepts derived from numerical studies on 3D Edwards-Anderson spin glass model.

In-situ, In-Memory Stateful Vector Logic Operations based on Voltage Controlled Magnetic Anisotropy.

PubMed

Jaiswal, Akhilesh; Agrawal, Amogh; Roy, Kaushik

2018-04-10

Recently, the exponential increase in compute requirements demanded by emerging applications like artificial intelligence, Internet of things, etc. have rendered the state-of-art von-Neumann machines inefficient in terms of energy and throughput owing to the well-known von-Neumann bottleneck. A promising approach to mitigate the bottleneck is to do computations as close to the memory units as possible. One extreme possibility is to do in-situ Boolean logic computations by using stateful devices. Stateful devices are those that can act both as a compute engine and storage device, simultaneously. We propose such stateful, vector, in-memory operations using voltage controlled magnetic anisotropy (VCMA) effect in magnetic tunnel junctions (MTJ). Our proposal is based on the well known manufacturable 1-transistor - 1-MTJ bit-cell and does not require any modifications in the bit-cell circuit or the magnetic device. Instead, we leverage the very physics of the VCMA effect to enable stateful computations. Specifically, we exploit the voltage asymmetry of the VCMA effect to construct stateful IMP (implication) gate and use the precessional switching dynamics of the VCMA devices to propose a massively parallel NOT operation. Further, we show that other gates like AND, OR, NAND, NOR, NIMP (complement of implication) can be implemented using multi-cycle operations.

Energy efficient and fast reversal of a fixed skyrmion two-terminal memory with spin current assisted by voltage controlled magnetic anisotropy

NASA Astrophysics Data System (ADS)

Bhattacharya, Dhritiman; Mamun Al-Rashid, Md; Atulasimha, Jayasimha

2017-10-01

Recent work (P-H Jang et al 2015 Appl. Phys. Lett. 107 202401, J. Sampaio et al 2016 Appl. Phys. Lett. 108 112403) suggests that ferromagnetic reversal with spin transfer torque (STT) requires more current in a system in the presence of Dzyaloshinskii-Moriya interaction (DMI) than switching a typical ferromagnet of the same dimensions and perpendicular magnetic anisotropy (PMA). However, DMI promotes the stabilization of skyrmions and we report that when perpendicular anisotropy is modulated (reduced) for both the skyrmion and ferromagnet, it takes a much smaller current to reverse the fixed skyrmion than to reverse the ferromagnet in the same amount of time, or the skyrmion reverses much faster than the ferromagnet at similar levels of current. We show with rigorous micromagnetic simulations that skyrmion switching proceeds along a different path at very low PMA, which results in a significant reduction in the spin current or time required for reversal. This can offer potential for memory applications where a relatively simple modification of the standard STT-RAM (to include a heavy metal adjacent to the soft magnetic layer and with appropriate design of the tunnel barrier) can lead to an energy efficient and fast magnetic memory device based on the reversal of fixed skyrmions.

Magnetic Memory of Two Lunar Samples, 15405 and 15445

NASA Astrophysics Data System (ADS)

Kletetschka, G.; Kamenikova, K.; Fuller, M.; Cizkova, K.

2016-08-01

We reanalyzed Apollo's literature records using empirical scaling law methods to search for the presence of Lunar iron carriers capable of recording reliable magnetic paleofields. Lunar rocks have a large spectrum of paleofields (1-100uT).

Using repetitive transcranial magnetic stimulation to study the underlying neural mechanisms of human motor learning and memory.

PubMed

Censor, Nitzan; Cohen, Leonardo G

2011-01-01

In the last two decades, there has been a rapid development in the research of the physiological brain mechanisms underlying human motor learning and memory. While conventional memory research performed on animal models uses intracellular recordings, microfusion of protein inhibitors to specific brain areas and direct induction of focal brain lesions, human research has so far utilized predominantly behavioural approaches and indirect measurements of neural activity. Repetitive transcranial magnetic stimulation (rTMS), a safe non-invasive brain stimulation technique, enables the study of the functional role of specific cortical areas by evaluating the behavioural consequences of selective modulation of activity (excitation or inhibition) on memory generation and consolidation, contributing to the understanding of the neural substrates of motor learning. Depending on the parameters of stimulation, rTMS can also facilitate learning processes, presumably through purposeful modulation of excitability in specific brain regions. rTMS has also been used to gain valuable knowledge regarding the timeline of motor memory formation, from initial encoding to stabilization and long-term retention. In this review, we summarize insights gained using rTMS on the physiological and neural mechanisms of human motor learning and memory. We conclude by suggesting possible future research directions, some with direct clinical implications.

Functional segregation of the inferior frontal gyrus for syntactic processes: a functional magnetic-resonance imaging study.

PubMed

Uchiyama, Yuji; Toyoda, Hiroshi; Honda, Manabu; Yoshida, Haruyo; Kochiyama, Takanori; Ebe, Kazutoshi; Sadato, Norihiro

2008-07-01

We used functional magnetic resonance imaging in 18 normal volunteers to determine whether there is separate representation of syntactic, semantic, and verbal working memory processing in the left inferior frontal gyrus (GFi). We compared a sentence comprehension task with a short-term memory maintenance task to identify syntactic and semantic processing regions. To investigate the effects of syntactic and verbal working memory load while minimizing the differences in semantic processes, we used comprehension tasks with garden-path (GP) sentences, which require re-parsing, and non-garden-path (NGP) sentences. Compared with the short-term memory task, sentence comprehension activated the left GFi, including Brodmann areas (BAs) 44, 45, and 47, and the left superior temporal gyrus. In GP versus NGP sentences, there was greater activity in the left BAs 44, 45, and 46 extending to the left anterior insula, the pre-supplementary motor area, and the right cerebellum. In the left GFi, verbal working memory activity was located more dorsally (BA 44/45), semantic processing was located more ventrally (BA 47), and syntactic processing was located in between (BA 45). These findings indicate a close relationship between semantic and syntactic processes, and suggest that BA 45 might link verbal working memory and semantic processing via syntactic unification processes.

A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications

NASA Astrophysics Data System (ADS)

Liu, Chunsen; Yan, Xiao; Song, Xiongfei; Ding, Shijin; Zhang, David Wei; Zhou, Peng

2018-05-01

As conventional circuits based on field-effect transistors are approaching their physical limits due to quantum phenomena, semi-floating gate transistors have emerged as an alternative ultrafast and silicon-compatible technology. Here, we show a quasi-non-volatile memory featuring a semi-floating gate architecture with band-engineered van der Waals heterostructures. This two-dimensional semi-floating gate memory demonstrates 156 times longer refresh time with respect to that of dynamic random access memory and ultrahigh-speed writing operations on nanosecond timescales. The semi-floating gate architecture greatly enhances the writing operation performance and is approximately 106 times faster than other memories based on two-dimensional materials. The demonstrated characteristics suggest that the quasi-non-volatile memory has the potential to bridge the gap between volatile and non-volatile memory technologies and decrease the power consumption required for frequent refresh operations, enabling a high-speed and low-power random access memory.

Memory-Guided Attention: Independent Contributions of the Hippocampus and Striatum.

PubMed

Goldfarb, Elizabeth V; Chun, Marvin M; Phelps, Elizabeth A

2016-01-20

Memory can strongly influence how attention is deployed in future encounters. Though memory dependent on the medial temporal lobes has been shown to drive attention, how other memory systems could concurrently and comparably enhance attention is less clear. Here, we demonstrate that both reinforcement learning and context memory facilitate attention in a visual search task. Using functional magnetic resonance imaging, we dissociate the mechanisms by which these memories guide attention: trial by trial, the hippocampus (not the striatum) predicted attention benefits from context memory, while the striatum (not the hippocampus) predicted facilitation from rewarded stimulus-response associations. Responses in these regions were also distinctly correlated with individual differences in each type of memory-guided attention. This study provides novel evidence for the role of the striatum in guiding attention, dissociable from hippocampus-dependent context memory.

Memory-Guided Attention: Independent Contributions of the Hippocampus and Striatum

PubMed Central

Goldfarb, Elizabeth V.; Chun, Marvin M.; Phelps, Elizabeth A.

2015-01-01

SUMMARY Memory can strongly influence how attention is deployed in future encounters. Though memory dependent on the medial temporal lobes has been shown to drive attention, how other memory systems could concurrently and comparably enhance attention is less clear. Here, we demonstrate that both reinforcement learning and context memory facilitate attention in a visual search task. Using functional magnetic resonance imaging, we dissociate the mechanisms by which these memories guide attention: trial by trial, the hippocampus (not the striatum) predicted attention benefits from context memory, while the striatum (not the hippocampus) predicted facilitation from rewarded stimulus-response associations. Responses in these regions were also distinctly correlated with individual differences in each type of memory-guided attention. This study provides novel evidence for the role of the striatum in guiding attention, dissociable from hippocampus-dependent context memory. PMID:26777274

Recognition techniques for extracting information from semistructured documents

NASA Astrophysics Data System (ADS)

Della Ventura, Anna; Gagliardi, Isabella; Zonta, Bruna

2000-12-01

Archives of optical documents are more and more massively employed, the demand driven also by the new norms sanctioning the legal value of digital documents, provided they are stored on supports that are physically unalterable. On the supply side there is now a vast and technologically advanced market, where optical memories have solved the problem of the duration and permanence of data at costs comparable to those for magnetic memories. The remaining bottleneck in these systems is the indexing. The indexing of documents with a variable structure, while still not completely automated, can be machine supported to a large degree with evident advantages both in the organization of the work, and in extracting information, providing data that is much more detailed and potentially significant for the user. We present here a system for the automatic registration of correspondence to and from a public office. The system is based on a general methodology for the extraction, indexing, archiving, and retrieval of significant information from semi-structured documents. This information, in our prototype application, is distributed among the database fields of sender, addressee, subject, date, and body of the document.

Development of Metallic Sensory Alloys

NASA Technical Reports Server (NTRS)

Wallace Terryl A.; Newman, John A.; Horne, Michael R.; Messick, Peter L.

2010-01-01

Existing nondestructive evaluation (NDE) technologies are inherently limited by the physical response of the structural material being inspected and are therefore not generally effective at the identification of small discontinuities, making the detection of incipient damage extremely difficult. One innovative solution to this problem is to enhance or complement the NDE signature of structural materials to dramatically improve the ability of existing NDE tools to detect damage. To address this need, a multifunctional metallic material has been developed that can be used in structural applications. The material is processed to contain second phase sensory particles that significantly improve the NDE response, enhancing the ability of conventional NDE techniques to detect incipient damage both during and after flight. Ferromagnetic shape-memory alloys (FSMAs) are an ideal material for these sensory particles as they undergo a uniform and repeatable change in both magnetic properties and crystallographic structure (martensitic transformation) when subjected to strain and/or temperature changes which can be detected using conventional NDE techniques. In this study, the use of a ferromagnetic shape memory alloy (FSMA) as the sensory particles was investigated.

Write operation study of Co/BTO/LSMO ferroelectric tunnel junction

NASA Astrophysics Data System (ADS)

Wang, Z. H.; Zhao, W. S.; Kang, W.; Bouchenak-Khelladi, A.; Zhang, Y.; Klein, J.-O.; Ravelosona, D.; Chappert, C.

2013-07-01

Recently, a Co/BaTiO3/La0.67Sr0.33MnO3 (Co/BTO/LSMO) ferroelectric tunnel junction (FTJ) has shown the great potential towards non-volatile memory and logic applications due to its excellent performance. Especially, the giant OFF/ON tunnel resistance ratio (e.g., ˜100) assures that FTJ-based random access memory (FTRAM) can achieve lower reading error rate than emerging magnetic RAM. Nevertheless, in this paper, our investigation demonstrated that this FTJ suffered from difficulties in write operation when integrating with current CMOS technology into a FTRAM. Specifically, the write performances of Co/BTO/LSMO 1T1R FTRAM such as cell area, speed, energy dissipation, and thermal fluctuation effect were simulated and evaluated with a compact model and CMOS 40 nm design kit. Simulation results indicate the drawbacks of this FTRAM including significant performance asymmetry between two write orientations, high write voltage, large cell area, and severe thermal fluctuation disturbance. Simultaneously, this research provides several methods of improving write performance of FTRAM from the perspective of device size and process parameters.

Memory binding and white matter integrity in familial Alzheimer’s disease

PubMed Central

Saarimäki, Heini; Bastin, Mark E.; Londoño, Ana C.; Pettit, Lewis; Lopera, Francisco; Della Sala, Sergio; Abrahams, Sharon

2015-01-01

Binding information in short-term and long-term memory are functions sensitive to Alzheimer’s disease. They have been found to be affected in patients who meet criteria for familial Alzheimer’s disease due to the mutation E280A of the PSEN1 gene. However, only short-term memory binding has been found to be affected in asymptomatic carriers of this mutation. The neural correlates of this dissociation are poorly understood. The present study used diffusion tensor magnetic resonance imaging to investigate whether the integrity of white matter structures could offer an account. A sample of 19 patients with familial Alzheimer’s disease, 18 asymptomatic carriers and 21 non-carrier controls underwent diffusion tensor magnetic resonance imaging, neuropsychological and memory binding assessment. The short-term memory binding task required participants to detect changes across two consecutive screens displaying arrays of shapes, colours, or shape-colour bindings. The long-term memory binding task was a Paired Associates Learning Test. Performance on these tasks were entered into regression models. Relative to controls, patients with familial Alzheimer’s disease performed poorly on both memory binding tasks. Asymptomatic carriers differed from controls only in the short-term memory binding task. White matter integrity explained poor memory binding performance only in patients with familial Alzheimer’s disease. White matter water diffusion metrics from the frontal lobe accounted for poor performance on both memory binding tasks. Dissociations were found in the genu of corpus callosum which accounted for short-term memory binding impairments and in the hippocampal part of cingulum bundle which accounted for long-term memory binding deficits. The results indicate that white matter structures in the frontal and temporal lobes are vulnerable to the early stages of familial Alzheimer’s disease and their damage is associated with impairments in two memory binding functions known to be markers for Alzheimer’s disease. PMID:25762465

Memory binding and white matter integrity in familial Alzheimer's disease.

PubMed

Parra, Mario A; Saarimäki, Heini; Bastin, Mark E; Londoño, Ana C; Pettit, Lewis; Lopera, Francisco; Della Sala, Sergio; Abrahams, Sharon

2015-05-01

Binding information in short-term and long-term memory are functions sensitive to Alzheimer's disease. They have been found to be affected in patients who meet criteria for familial Alzheimer's disease due to the mutation E280A of the PSEN1 gene. However, only short-term memory binding has been found to be affected in asymptomatic carriers of this mutation. The neural correlates of this dissociation are poorly understood. The present study used diffusion tensor magnetic resonance imaging to investigate whether the integrity of white matter structures could offer an account. A sample of 19 patients with familial Alzheimer's disease, 18 asymptomatic carriers and 21 non-carrier controls underwent diffusion tensor magnetic resonance imaging, neuropsychological and memory binding assessment. The short-term memory binding task required participants to detect changes across two consecutive screens displaying arrays of shapes, colours, or shape-colour bindings. The long-term memory binding task was a Paired Associates Learning Test. Performance on these tasks were entered into regression models. Relative to controls, patients with familial Alzheimer's disease performed poorly on both memory binding tasks. Asymptomatic carriers differed from controls only in the short-term memory binding task. White matter integrity explained poor memory binding performance only in patients with familial Alzheimer's disease. White matter water diffusion metrics from the frontal lobe accounted for poor performance on both memory binding tasks. Dissociations were found in the genu of corpus callosum which accounted for short-term memory binding impairments and in the hippocampal part of cingulum bundle which accounted for long-term memory binding deficits. The results indicate that white matter structures in the frontal and temporal lobes are vulnerable to the early stages of familial Alzheimer's disease and their damage is associated with impairments in two memory binding functions known to be markers for Alzheimer's disease. © The Author (2015). Published by Oxford University Press on behalf of the Guarantors of Brain. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Effects of the thermal and magnetic paths on first order martensite transition of disordered Ni45Mn44Sn9In2 Heusler alloy exhibiting a giant magnetocaloric effect and magnetoresistance near room temperature

NASA Astrophysics Data System (ADS)

Chabri, T.; Ghosh, A.; Nair, Sunil; Awasthi, A. M.; Venimadhav, A.; Nath, T. K.

2018-05-01

The existence of a first order martensite transition in off-stoichiometric Ni45Mn44Sn9In2 ferromagnetic shape memory Heusler alloy has been clearly observed by thermal, magnetic, and magneto-transport measurements. Field and thermal path dependence of the change in large magnetic entropy and negative magnetoresistance are observed, which originate due to the sharp change in magnetization driven by metamagnetic transition from the weakly magnetic martensite phase to the ferromagnetic austenite phase in the vicinity of the martensite transition. The noticeable shift in the martensite transition with the application of a magnetic field is the most significant feature of the present study. This shift is due to the interplay of the austenite and martensite phase fraction in the alloy. The different aspects of the first order martensite transition, e.g. broadening of the martensite transition and the field induced arrest of the austenite phase are mainly related to the dynamics of coexisting phases in the vicinity of the martensite transition. The alloy also shows a second order ferromagnetic  →  paramagnetic transition near the Curie temperature of the austenite phase. A noticeably large change in magnetic entropy (ΔS M   =  24 J kg‑1 K‑1 at 298 K) and magnetoresistance (=  ‑33% at 295 K) has been observed for the change in 5 and 8 T magnetic fields, respectively. The change in adiabatic temperature for the change in a magnetic field of 5 T is found to be  ‑3.8 K at 299 K. The low cost of the ingredients and the large change in magnetic entropy very near to the room temperature makes Ni45Mn44Sn9In2 alloy a promising magnetic refrigerant for real technological application.

Magnetic antiskyrmions above room temperature in tetragonal Heusler materials

NASA Astrophysics Data System (ADS)

Nayak, Ajaya K.; Kumar, Vivek; Ma, Tianping; Werner, Peter; Pippel, Eckhard; Sahoo, Roshnee; Damay, Franoise; Rößler, Ulrich K.; Felser, Claudia; Parkin, Stuart S. P.

2017-08-01

Magnetic skyrmions are topologically stable, vortex-like objects surrounded by chiral boundaries that separate a region of reversed magnetization from the surrounding magnetized material. They are closely related to nanoscopic chiral magnetic domain walls, which could be used as memory and logic elements for conventional and neuromorphic computing applications that go beyond Moore’s law. Of particular interest is ‘racetrack memory’, which is composed of vertical magnetic nanowires, each accommodating of the order of 100 domain walls, and that shows promise as a solid state, non-volatile memory with exceptional capacity and performance. Its performance is derived from the very high speeds (up to one kilometre per second) at which chiral domain walls can be moved with nanosecond current pulses in synthetic antiferromagnet racetracks. Because skyrmions are essentially composed of a pair of chiral domain walls closed in on themselves, but are, in principle, more stable to perturbations than the component domain walls themselves, they are attractive for use in spintronic applications, notably racetrack memory. Stabilization of skyrmions has generally been achieved in systems with broken inversion symmetry, in which the asymmetric Dzyaloshinskii-Moriya interaction modifies the uniform magnetic state to a swirling state. Depending on the crystal symmetry, two distinct types of skyrmions have been observed experimentally, namely, Bloch and Néel skyrmions. Here we present the experimental manifestation of another type of skyrmion—the magnetic antiskyrmion—in acentric tetragonal Heusler compounds with D2d crystal symmetry. Antiskyrmions are characterized by boundary walls that have alternating Bloch and Néel type as one traces around the boundary. A spiral magnetic ground-state, which propagates in the tetragonal basal plane, is transformed into an antiskyrmion lattice state under magnetic fields applied along the tetragonal axis over a wide range of temperatures. Direct imaging by Lorentz transmission electron microscopy shows field-stabilized antiskyrmion lattices and isolated antiskyrmions from 100 kelvin to well beyond room temperature, and zero-field metastable antiskyrmions at low temperatures. These results enlarge the family of magnetic skyrmions and pave the way to the engineering of complex bespoke designed skyrmionic structures.

A Role for the Left Angular Gyrus in Episodic Simulation and Memory.

PubMed

Thakral, Preston P; Madore, Kevin P; Schacter, Daniel L

2017-08-23

Functional magnetic resonance imaging (fMRI) studies indicate that episodic simulation (i.e., imagining specific future experiences) and episodic memory (i.e., remembering specific past experiences) are associated with enhanced activity in a common set of neural regions referred to as the core network. This network comprises the hippocampus, medial prefrontal cortex, and left angular gyrus, among other regions. Because fMRI data are correlational, it is unknown whether activity increases in core network regions are critical for episodic simulation and episodic memory. In the current study, we used MRI-guided transcranial magnetic stimulation (TMS) to assess whether temporary disruption of the left angular gyrus would impair both episodic simulation and memory (16 participants, 10 females). Relative to TMS to a control site (vertex), disruption of the left angular gyrus significantly reduced the number of internal (i.e., episodic) details produced during the simulation and memory tasks, with a concomitant increase in external detail production (i.e., semantic, repetitive, or off-topic information), reflected by a significant detail by TMS site interaction. Difficulty in the simulation and memory tasks also increased after TMS to the left angular gyrus relative to the vertex. In contrast, performance in a nonepisodic control task did not differ statistically as a function of TMS site (i.e., number of free associates produced or difficulty in performing the free associate task). Together, these results are the first to demonstrate that the left angular gyrus is critical for both episodic simulation and episodic memory. SIGNIFICANCE STATEMENT Humans have the ability to imagine future episodes (i.e., episodic simulation) and remember episodes from the past (i.e., episodic memory). A wealth of neuroimaging studies have revealed that these abilities are associated with enhanced activity in a core network of neural regions, including the hippocampus, medial prefrontal cortex, and left angular gyrus. However, neuroimaging data are correlational and do not tell us whether core regions support critical processes for simulation and memory. In the current study, we used transcranial magnetic stimulation and demonstrated that temporary disruption of the left angular gyrus leads to impairments in simulation and memory. The present study provides the first causal evidence to indicate that this region is critical for these fundamental abilities. Copyright © 2017 the authors 0270-6474/17/378142-08$15.00/0.

A Role for the Left Angular Gyrus in Episodic Simulation and Memory

PubMed Central

2017-01-01

Functional magnetic resonance imaging (fMRI) studies indicate that episodic simulation (i.e., imagining specific future experiences) and episodic memory (i.e., remembering specific past experiences) are associated with enhanced activity in a common set of neural regions referred to as the core network. This network comprises the hippocampus, medial prefrontal cortex, and left angular gyrus, among other regions. Because fMRI data are correlational, it is unknown whether activity increases in core network regions are critical for episodic simulation and episodic memory. In the current study, we used MRI-guided transcranial magnetic stimulation (TMS) to assess whether temporary disruption of the left angular gyrus would impair both episodic simulation and memory (16 participants, 10 females). Relative to TMS to a control site (vertex), disruption of the left angular gyrus significantly reduced the number of internal (i.e., episodic) details produced during the simulation and memory tasks, with a concomitant increase in external detail production (i.e., semantic, repetitive, or off-topic information), reflected by a significant detail by TMS site interaction. Difficulty in the simulation and memory tasks also increased after TMS to the left angular gyrus relative to the vertex. In contrast, performance in a nonepisodic control task did not differ statistically as a function of TMS site (i.e., number of free associates produced or difficulty in performing the free associate task). Together, these results are the first to demonstrate that the left angular gyrus is critical for both episodic simulation and episodic memory. SIGNIFICANCE STATEMENT Humans have the ability to imagine future episodes (i.e., episodic simulation) and remember episodes from the past (i.e., episodic memory). A wealth of neuroimaging studies have revealed that these abilities are associated with enhanced activity in a core network of neural regions, including the hippocampus, medial prefrontal cortex, and left angular gyrus. However, neuroimaging data are correlational and do not tell us whether core regions support critical processes for simulation and memory. In the current study, we used transcranial magnetic stimulation and demonstrated that temporary disruption of the left angular gyrus leads to impairments in simulation and memory. The present study provides the first causal evidence to indicate that this region is critical for these fundamental abilities. PMID:28733357

Multilevel control of the metastable states in a manganite film

NASA Astrophysics Data System (ADS)

Jin, Feng; Feng, Qiyuan; Guo, Zhuang; Lan, Da; Chen, Binbin; Xu, Haoran; Wang, Ze; Wang, Lingfei; Gao, Guanyin; Chen, Feng; Lu, Qingyou; Wu, Wenbin

2017-06-01

For high density memory applications, the dynamic switching between multilevel resistance states per cell is highly desirable, and for oxide-based memory devices, the multistate operation has been actively explored. We have previously shown that for La2/3Ca1/3MnO3 films, the antiferromagnetic charge-ordered-insulator (COI) phase can be induced via the anisotropic epitaxial strain, and it competes with the doping-determined ferromagnetic-metal (FMM) ground state in a wide temperature range. Here, we show that for the phase competitions, in various magnetic fields and/or thermal cycling, the reappearance of the COI phase and thus the resistance and magnetization can be manipulated and quantified in a multilevel manner at lower temperatures. Furthermore, by using a high-field magnetic force microscope, we image the COI/FMM domain structures in accordance with the transport measurements, and find that the evolving domains or the phase fraction ratios do underline the metastability of the reappeared COI droplets, possibly protected by the energy barriers due to accommodation strain. These results may add new insights into the design and fabrication of future multilevel memory cells.

[Identification of Env-specific monoclonal antibodies from Chinese HIV-1 infected person by magnetic beads separating B cells and single cell RT-PCR cloning].

PubMed

Huang, Xiang-Ying; Yu, Shuang-Qing; Cheng, Zhan; Ye, Jing-Rong; Xu, Ke; Feng, Xia; Zeng, Yi

2013-04-01

To establish a simple and practical method for screening of Env-specific monoclonal antibodies from HIV-1 infected individuals. Human B cells were purified by negative sorting from PBMCs and memory B cells were further enriched using anti-CD27 microbeads. Gp120 antigen labbled with biotin was incubated with memory B cells to specifically bind IgG on cells membrane. The memory B cells expressing the Env-specific antibody were harvested by magnetic beads separating, counted and diluted to the level of single cell in each PCR well that loading with catch buffer containing RNase inhibitor to get RNAs. The antibody genes were amplified by single cell RT-PCR and nested PCR, cloned into eukaryotic expression vectors and transfected into 293T cells. The binding activity of recombinant antibodies to Env were tested by ELISA. Three monocolonal Env-specific antibodies were isolated from one HIV-1 infected individual. We can obtain Env-specific antibody by biotin labbled antigen, magnetic beads separating technique coupled with single cell RT-PCR and expression cloning.

Memory Reactivation during Rapid Eye Movement Sleep Promotes Its Generalization and Integration in Cortical Stores

PubMed Central

Sterpenich, Virginie; Schmidt, Christina; Albouy, Geneviève; Matarazzo, Luca; Vanhaudenhuyse, Audrey; Boveroux, Pierre; Degueldre, Christian; Leclercq, Yves; Balteau, Evelyne; Collette, Fabienne; Luxen, André; Phillips, Christophe; Maquet, Pierre

2014-01-01

Study Objectives: Memory reactivation appears to be a fundamental process in memory consolidation. In this study we tested the influence of memory reactivation during rapid eye movement (REM) sleep on memory performance and brain responses at retrieval in healthy human participants. Participants: Fifty-six healthy subjects (28 women and 28 men, age [mean ± standard deviation]: 21.6 ± 2.2 y) participated in this functional magnetic resonance imaging (fMRI) study. Methods and Results: Auditory cues were associated with pictures of faces during their encoding. These memory cues delivered during REM sleep enhanced subsequent accurate recollections but also false recognitions. These results suggest that reactivated memories interacted with semantically related representations, and induced new creative associations, which subsequently reduced the distinction between new and previously encoded exemplars. Cues had no effect if presented during stage 2 sleep, or if they were not associated with faces during encoding. Functional magnetic resonance imaging revealed that following exposure to conditioned cues during REM sleep, responses to faces during retrieval were enhanced both in a visual area and in a cortical region of multisensory (auditory-visual) convergence. Conclusions: These results show that reactivating memories during REM sleep enhances cortical responses during retrieval, suggesting the integration of recent memories within cortical circuits, favoring the generalization and schematization of the information. Citation: Sterpenich V, Schmidt C, Albouy G, Matarazzo L, Vanhaudenhuyse A, Boveroux P, Degueldre C, Leclercq Y, Balteau E, Collette F, Luxen A, Phillips C, Maquet P. Memory reactivation during rapid eye movement sleep promotes its generalization and integration in cortical stores. SLEEP 2014;37(6):1061-1075. PMID:24882901

Characterizing the magnetic memory signals on the surface of plasma transferred arc cladding coating under fatigue loads

NASA Astrophysics Data System (ADS)

Huang, Haihong; Han, Gang; Qian, Zhengchun; Liu, Zhifeng

2017-12-01

The metal magnetic memory signals were measured during dynamic tension tests on the surfaces of the cladding coatings by plasma transferred arc (PTA) welding and the 0.45% C steel. Results showed that the slope of the normal component Hp(y) of magnetic signal and the average value of the tangential component Hp(x) reflect the magnetization of the specimens. The signals increased sharply in the few initial cycles; and then fluctuated around a constant value during fatigue process until fracture. For the PTA cladding coating, the slope of Hp(y) was steeper and the average of Hp(x) was smaller, compared with the 0.45% C steel. The hysteresis curves of cladding layer, bonding layer and substrate were measured by vibrating sample magnetometer testing, and then saturation magnetization, initial susceptibility and coercivity were further calculated. The stress-magnetization curves were also plotted based on the J-A model, which showed that the PTA cladding coating has smaller remanence and coercivity compared with the 0.45% C steel. The microstructures of cladding coating confirmed that the dendritic structure and second-phase of alloy hinder the magnetic domain motion, which was the main factor influencing the variation of magnetic signal during the fatigue tests.

A motionless actuation system for magnetic shape memory devices

NASA Astrophysics Data System (ADS)

Armstrong, Andrew; Finn, Kevin; Hobza, Anthony; Lindquist, Paul; Rafla, Nader; Müllner, Peter

2017-10-01

Ni-Mn-Ga is a Magnetic Shape Memory (MSM) alloy that changes shape in response to a variable magnetic field. We can intentionally manipulate the shape of the material to function as an actuator, and the material can thus replace complicated small electromechanical systems. In previous work, a very simple and precise solid-state micropump was developed, but a mechanical rotation was required to translate the position of the magnetic field. This mechanical rotation defeats the purpose of the motionless solid-state device. Here we present a solid-state electromagnetic driver to linearly progress the position of the applied magnetic field and the associated shrinkage. The generated magnetic field was focused at either of two pole pieces, providing a mechanism for moving the localized shrinkage in the MSM element. We confirmed that our driver has sufficient strength to actuate the MSM element using optical microscopy. We validated the whole design by comparing results obtained with finite element analysis with the experimentally measured flux density. This drive system serves as a possible replacement to the mechanical rotation of the magnetic field by using a multi-pole electromagnet that sweeps the magnetic field across the MSM micropump element, solid-state switching the current to each pole piece in the multi-pole electromagnet.

Measurement and tricubic interpolation of the magnetic field for the OLYMPUS experiment

NASA Astrophysics Data System (ADS)

Bernauer, J. C.; Diefenbach, J.; Elbakian, G.; Gavrilov, G.; Goerrissen, N.; Hasell, D. K.; Henderson, B. S.; Holler, Y.; Karyan, G.; Ludwig, J.; Marukyan, H.; Naryshkin, Y.; O'Connor, C.; Russell, R. L.; Schmidt, A.; Schneekloth, U.; Suvorov, K.; Veretennikov, D.

2016-07-01

The OLYMPUS experiment used a 0.3 T toroidal magnetic spectrometer to measure the momenta of outgoing charged particles. In order to accurately determine particle trajectories, knowledge of the magnetic field was needed throughout the spectrometer volume. For that purpose, the magnetic field was measured at over 36,000 positions using a three-dimensional Hall probe actuated by a system of translation tables. We used these field data to fit a numerical magnetic field model, which could be employed to calculate the magnetic field at any point in the spectrometer volume. Calculations with this model were computationally intensive; for analysis applications where speed was crucial, we pre-computed the magnetic field and its derivatives on an evenly spaced grid so that the field could be interpolated between grid points. We developed a spline-based interpolation scheme suitable for SIMD implementations, with a memory layout chosen to minimize space and optimize the cache behavior to quickly calculate field values. This scheme requires only one-eighth of the memory needed to store necessary coefficients compared with a previous scheme (Lekien and Marsden, 2005 [1]). This method was accurate for the vast majority of the spectrometer volume, though special fits and representations were needed to improve the accuracy close to the magnet coils and along the toroidal axis.

A review of emerging non-volatile memory (NVM) technologies and applications

NASA Astrophysics Data System (ADS)

Chen, An

2016-11-01

This paper will review emerging non-volatile memory (NVM) technologies, with the focus on phase change memory (PCM), spin-transfer-torque random-access-memory (STTRAM), resistive random-access-memory (RRAM), and ferroelectric field-effect-transistor (FeFET) memory. These promising NVM devices are evaluated in terms of their advantages, challenges, and applications. Their performance is compared based on reported parameters of major industrial test chips. Memory selector devices and cell structures are discussed. Changing market trends toward low power (e.g., mobile, IoT) and data-centric applications create opportunities for emerging NVMs. High-performance and low-cost emerging NVMs may simplify memory hierarchy, introduce non-volatility in logic gates and circuits, reduce system power, and enable novel architectures. Storage-class memory (SCM) based on high-density NVMs could fill the performance and density gap between memory and storage. Some unique characteristics of emerging NVMs can be utilized for novel applications beyond the memory space, e.g., neuromorphic computing, hardware security, etc. In the beyond-CMOS era, emerging NVMs have the potential to fulfill more important functions and enable more efficient, intelligent, and secure computing systems.

Cost-effective, transfer-free, flexible resistive random access memory using laser-scribed reduced graphene oxide patterning technology.

PubMed

Tian, He; Chen, Hong-Yu; Ren, Tian-Ling; Li, Cheng; Xue, Qing-Tang; Mohammad, Mohammad Ali; Wu, Can; Yang, Yi; Wong, H-S Philip

2014-06-11

Laser scribing is an attractive reduced graphene oxide (rGO) growth and patterning technology because the process is low-cost, time-efficient, transfer-free, and flexible. Various laser-scribed rGO (LSG) components such as capacitors, gas sensors, and strain sensors have been demonstrated. However, obstacles remain toward practical application of the technology where all the components of a system are fabricated using laser scribing. Memory components, if developed, will substantially broaden the application space of low-cost, flexible electronic systems. For the first time, a low-cost approach to fabricate resistive random access memory (ReRAM) using laser-scribed rGO as the bottom electrode is experimentally demonstrated. The one-step laser scribing technology allows transfer-free rGO synthesis directly on flexible substrates or non-flat substrates. Using this time-efficient laser-scribing technology, the patterning of a memory-array area up to 100 cm(2) can be completed in 25 min. Without requiring the photoresist coating for lithography, the surface of patterned rGO remains as clean as its pristine state. Ag/HfOx/LSG ReRAM using laser-scribing technology is fabricated in this work. Comprehensive electrical characteristics are presented including forming-free behavior, stable switching, reasonable reliability performance and potential for 2-bit storage per memory cell. The results suggest that laser-scribing technology can potentially produce more cost-effective and time-effective rGO-based circuits and systems for practical applications.

Topological computation based on direct magnetic logic communication.

PubMed

Zhang, Shilei; Baker, Alexander A; Komineas, Stavros; Hesjedal, Thorsten

2015-10-28

Non-uniform magnetic domains with non-trivial topology, such as vortices and skyrmions, are proposed as superior state variables for nonvolatile information storage. So far, the possibility of logic operations using topological objects has not been considered. Here, we demonstrate numerically that the topology of the system plays a significant role for its dynamics, using the example of vortex-antivortex pairs in a planar ferromagnetic film. Utilising the dynamical properties and geometrical confinement, direct logic communication between the topological memory carriers is realised. This way, no additional magnetic-to-electrical conversion is required. More importantly, the information carriers can spontaneously travel up to ~300 nm, for which no spin-polarised current is required. The derived logic scheme enables topological spintronics, which can be integrated into large-scale memory and logic networks capable of complex computations.

Tailoring Spin Textures in Complex Oxide Micromagnets

DOE PAGES

Lee, Michael S.; Wynn, Thomas A.; Folven, Erik; ...

2016-09-12

Engineered topological spin textures with submicron dimensions in magnetic materials have emerged in recent years as the building blocks for various spin-based memory devices. Examples of these magnetic configurations include magnetic skyrmions, vortices, and domain walls. Here in this paper, we show the ability to control and characterize the evolution of spin textures in complex oxide micromagnets as a function of temperature through the delicate balance of fundamental materials parameters, micromagnet geometries, and epitaxial strain. These results demonstrate that in order to fully describe the observed spin textures, it is necessary to account for the spatial variation of the magneticmore » parameters within the micromagnet. This study provides the framework to accurately characterize such structures, leading to efficient design of spin-based memory devices based on complex oxide thin films.« less

Brain activity associated with memory and cognitive function during jaw-tapping movement in healthy subjects using functional magnetic resonance imaging.

PubMed

Cho, Seung-Yeon; Shin, Ae-Sook; Na, Byung-Jo; Jahng, Geon-Ho; Park, Seong-Uk; Jung, Woo-Sang; Moon, Sang-Kwan; Park, Jung-Mi

2013-06-01

To determine whether jaw-tapping movement, a classically described as an indication of personal well-being and mental health, stimulates the memory and the cognitive regions of the brain and is associated with improved brain performance. Twelve healthy right-handed female subjects completed the study. Each patient performed a jaw-tapping task and an n-back task during functional magnetic resonance imaging (fMRI). The subjects were trained to carry out the jaw-tapping movement at home twice a day for 4 weeks. The fMRI was repeated when they returned. During the first and second jaw-tapping session, both sides of precentral gyrus and the right middle frontal gyrus (BA 6) were activated. And during the second session of the jaw-tapping task, parts of frontal lobe and temporal lobe related to memory function were more activated. In addition, the total percent task accuracy in n-back task significantly increased after 4 weeks of jawtapping movement. After jaw-tapping training for 4 weeks, brain areas related to memory showed significantly increased blood oxygen level dependent signals. Jaw-tapping movement might be a useful exercise for stimulating the memory and cognitive regions of the brain.

Nanoscale Design of Nano-Sized Particles in Shape-Memory Polymer Nanocomposites Driven by Electricity

PubMed Central

Lu, Haibao; Huang, Wei Min; Liang, Fei; Yu, Kai

2013-01-01

In the last few years, we have witnessed significant progress in developing high performance shape memory polymer (SMP) nanocomposites, in particular, for shape recovery activated by indirect heating in the presence of electricity, magnetism, light, radio frequency, microwave and radiation, etc. In this paper, we critically review recent findings in Joule heating of SMP nanocomposites incorporated with nanosized conductive electromagnetic particles by means of nanoscale control via applying an electro- and/or magnetic field. A few different nanoscale design principles to form one-/two-/three- dimensional conductive networks are discussed. PMID:28788303

Annealing effects in plated-wire memory elements. I - Interdiffusion of copper and Permalloy.

NASA Technical Reports Server (NTRS)

Knudson, C. I.; Kench, J. R.

1971-01-01

Results of investigations using X-ray diffraction and electron-beam microprobe techniques have shown that copper and Permalloy platings interdiffuse at low temperatures when plated-wire memory elements are annealed for times as short as 50 hr. Measurable interdiffusion between Permalloy platings and gold substrates does not occur in similar conditions. Both magnetic and compositional changes during aging are found to occur by a thermally activated process with activation energies around 38 kcal/mol. It is shown, however, that copper-diffusion and magnetic-dispersion changes during aging are merely concurrent processes, neither being the other's cause.

Theoretical description of magnetocaloric effect in the shape memory alloy exhibiting metamagnetic behavior

DOE Office of Scientific and Technical Information (OSTI.GOV)

L'vov, Victor A.; Taras Shevchenko National University, Kyiv 01601; Kosogor, Anna, E-mail: annakosogor@gmail.com

2016-01-07

A simple thermodynamic theory is proposed for the quantitative description of giant magnetocaloric effect observed in metamagnetic shape memory alloys. Both the conventional magnetocaloric effect at the Curie temperature and the inverse magnetocaloric effect at the transition from the ferromagnetic austenite to a weakly magnetic martensite are considered. These effects are evaluated from the Landau-type free energy expression involving exchange interactions in a system of a two magnetic sublattices. The findings of the thermodynamic theory agree with first-principles calculations and experimental results from Ni-Mn-In-Co and Ni-Mn-Sn alloys, respectively.

Single voxel magnetic resonance spectroscopy at 3 Tesla in a memory disorders clinic: early right hippocampal NAA/Cr loss in mildly impaired subjects.

PubMed

Caserta, Maria T; Ragin, Ann; Hermida, Adriana P; Ahrens, R John; Wise, Leon

2008-11-30

In this study, we use magnetic resonance spectroscopy (MRS) at 3 Tesla to measure N-acetyl aspartate (NAA), myo-inositol (mI) and choline (Cho) to creatine (Cr) ratios in R (right) and L (left) hippocampi (H) in 8 mildly memory impaired (MMI), 6 probable Alzheimer's Disease (PRAD), and 17 control subjects. NAA/Cr was significantly reduced in the RH in the MMI group and bilaterally in the PRAD group vs. controls. No other metabolite differences were noted between the three groups. Five MMI subjects have converted to PRAD in follow-up. These findings suggest that RH NAA/Cr ratios measured at 3 Tesla may be a sensitive marker of future progression to dementia in a clinically defined population with isolated memory complaints.

Spin manipulation and spin-lattice interaction in magnetic colloidal quantum dots

NASA Astrophysics Data System (ADS)

Moro, Fabrizio; Turyanska, Lyudmila; Granwehr, Josef; Patanè, Amalia

2014-11-01

We report on the spin-lattice interaction and coherent manipulation of electron spins in Mn-doped colloidal PbS quantum dots (QDs) by electron spin resonance. We show that the phase memory time,TM , is limited by Mn-Mn dipolar interactions, hyperfine interactions of the protons (1H) on the QD capping ligands with Mn ions in their proximity (<1 nm), and surface phonons originating from thermal fluctuations of the capping ligands. In the low Mn concentration limit and at low temperature, we achieve a long phase memory time constant TM˜0.9 μ s , thus enabling the observation of Rabi oscillations. Our findings suggest routes to the rational design of magnetic colloidal QDs with phase memory times exceeding the current limits of relevance for the implementation of QDs as qubits in quantum information processing.

Aging, memory, and nonhierarchical energy landscape of spin jam

PubMed Central

Samarakoon, Anjana; Sato, Taku J.; Chen, Tianran; Chern, Gai-Wei; Yang, Junjie; Klich, Israel; Sinclair, Ryan; Zhou, Haidong; Lee, Seung-Hun

2016-01-01

The notion of complex energy landscape underpins the intriguing dynamical behaviors in many complex systems ranging from polymers, to brain activity, to social networks and glass transitions. The spin glass state found in dilute magnetic alloys has been an exceptionally convenient laboratory frame for studying complex dynamics resulting from a hierarchical energy landscape with rugged funnels. Here, we show, by a bulk susceptibility and Monte Carlo simulation study, that densely populated frustrated magnets in a spin jam state exhibit much weaker memory effects than spin glasses, and the characteristic properties can be reproduced by a nonhierarchical landscape with a wide and nearly flat but rough bottom. Our results illustrate that the memory effects can be used to probe different slow dynamics of glassy materials, hence opening a window to explore their distinct energy landscapes. PMID:27698141

Unconditional polarization qubit quantum memory at room temperature

NASA Astrophysics Data System (ADS)

Namazi, Mehdi; Kupchak, Connor; Jordaan, Bertus; Shahrokhshahi, Reihaneh; Figueroa, Eden

2016-05-01

The creation of global quantum key distribution and quantum communication networks requires multiple operational quantum memories. Achieving a considerable reduction in experimental and cost overhead in these implementations is thus a major challenge. Here we present a polarization qubit quantum memory fully-operational at 330K, an unheard frontier in the development of useful qubit quantum technology. This result is achieved through extensive study of how optical response of cold atomic medium is transformed by the motion of atoms at room temperature leading to an optimal characterization of room temperature quantum light-matter interfaces. Our quantum memory shows an average fidelity of 86.6 +/- 0.6% for optical pulses containing on average 1 photon per pulse, thereby defeating any classical strategy exploiting the non-unitary character of the memory efficiency. Our system significantly decreases the technological overhead required to achieve quantum memory operation and will serve as a building block for scalable and technologically simpler many-memory quantum machines. The work was supported by the US-Navy Office of Naval Research, Grant Number N00141410801 and the Simons Foundation, Grant Number SBF241180. B. J. acknowledges financial assistance of the National Research Foundation (NRF) of South Africa.

Feasibilty of a Multi-bit Cell Perpendicular Magnetic Tunnel Junction Device

NASA Astrophysics Data System (ADS)

Kim, Chang Soo

The ultimate objective of this research project was to explore the feasibility of making a multi-bit cell perpendicular magnetic tunnel junction (PMTJ) device to increase the storage density of spin-transfer-torque random access memory (STT-RAM). As a first step toward demonstrating a multi-bit cell device, this dissertation contributed a systematic and detailed study of developing a single cell PMTJ device using L10 FePt films. In the beginning of this research, 13 up-and-coming non-volatile memory (NVM) technologies were investigated and evaluated to see whether one of them might outperform NAND flash memories and even HDDs on a cost-per-TB basis in 2020. This evaluation showed that STT-RAM appears to potentially offer superior power efficiency, among other advantages. It is predicted that STTRAM's density could make it a promising candidate for replacing NAND flash memories and possibly HDDs if STTRAM could be improved to store multiple bits per cell. Ta/Mg0 under-layers were used first in order to develop (001) L1 0 ordering of FePt at a low temperature of below 400 °C. It was found that the tradeoff between surface roughness and (001) L10 ordering of FePt makes it difficult to achieve low surface roughness and good perpendicular magnetic properties simultaneously when Ta/Mg0 under-layers are used. It was, therefore, decided to investigate MgO/CrRu under-layers to simultaneously achieve smooth films with good ordering below 400°C. A well ordered 4 nm L10 FePt film with RMS surface roughness close to 0.4 nm, perpendicular coercivity of about 5 kOe, and perpendicular squareness near 1 was obtained at a deposition temperature of 390 °C on a thermally oxidized Si substrate when MgO/CrRu under-layers are used. A PMTJ device was developed by depositing a thin MgO tunnel barrier layer and a top L10 FePt film and then being postannealed at 450 °C for 30 minutes. It was found that the sputtering power needs to be minimized during the thin MgO tunnel barrier deposition because the high sputtering power can degrade perpendicular magnetic anisotropy of the bottom L1 0 FePt film and also increase RMS film surface roughness of the MgO tunnel barrier layer. From a lithographically unpatterned PMTJ sample, MR ratio and RA were measured at room temperature by the CIPT method and found to be 138% and 6.4 kOmicrom2, respectively. A completed PMTJ test pattern with a junction size of 80x40 microm2 was fabricated and showed a measured MR ratio and RA product of 108% and 4~6 kOmicrom 2, respectively. These values agree relatively well with the corresponding values of 138% and 6.4 kOmicrom2 obtained from the unpatterned PMTJ sample measured by a current-in-plane tunneling (CIPT) method.

False Memories for Shape Activate the Lateral Occipital Complex

ERIC Educational Resources Information Center

Karanian, Jessica M.; Slotnick, Scott D.

2017-01-01

Previous functional magnetic resonance imaging evidence has shown that false memories arise from higher-level conscious processing regions rather than lower-level sensory processing regions. In the present study, we assessed whether the lateral occipital complex (LOC)--a lower-level conscious shape processing region--was associated with false…

Neural Correlates of Working Memory Performance in Adolescents and Young Adults with Dyslexia

ERIC Educational Resources Information Center

Vasic, Nenad; Lohr, Christina; Steinbrink, Claudia; Martin, Claudia; Wolf, Robert Christian

2008-01-01

Behavioral studies indicate deficits in phonological working memory (WM) and executive functioning in dyslexics. However, little is known about the underlying functional neuroanatomy. In the present study, neural correlates of WM in adolescents and young adults with dyslexia were investigated using event-related functional magnetic resonance…

Hippocampal Region-Specific Contributions to Memory Performance in Normal Elderly

ERIC Educational Resources Information Center

Chen, Karren H. M.; Chuah, Lisa Y. M.; Sim, Sam K. Y.; Chee, Michael W. L.

2010-01-01

To investigate the relationship between regional hippocampal volume and memory in healthy elderly, 147 community-based volunteers, aged 55-83 years, were evaluated using magnetic resonance imaging, the Groton Maze Learning Test, Visual Reproduction and the Rey Auditory Verbal Learning Test. Hippocampal volumes were determined by interactive…

Degradation of superconducting Nb/NbN films by atmospheric oxidation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henry, M. David; Wolfley, Steve; Young, Travis

2017-03-01

Niobium and niobium nitride thin films are transitioning from fundamental research toward wafer scale manufacturing with technology drivers that include superconducting circuits and electronics, optical single photon detectors, logic, and memory. Successful microfabrication requires precise control over the properties of sputtered superconducting films, including oxidation. Previous work has demonstrated the mechanism in oxidation of Nb and how film structure could have deleterious effects upon the superconducting properties. This study provides an examination of atmospheric oxidation of NbN films. By examination of the room temperature sheet resistance of NbN bulk oxidation was identified and confirmed by secondary ion mass spectrometry. Asmore » a result, Meissner magnetic measurements confirmed the bulk oxidation not observed with simple cryogenic resistivity measurements.« less

Image processing applications: From particle physics to society

NASA Astrophysics Data System (ADS)

Sotiropoulou, C.-L.; Luciano, P.; Gkaitatzis, S.; Citraro, S.; Giannetti, P.; Dell'Orso, M.

2017-01-01

We present an embedded system for extremely efficient real-time pattern recognition execution, enabling technological advancements with both scientific and social impact. It is a compact, fast, low consumption processing unit (PU) based on a combination of Field Programmable Gate Arrays (FPGAs) and the full custom associative memory chip. The PU has been developed for real time tracking in particle physics experiments, but delivers flexible features for potential application in a wide range of fields. It has been proposed to be used in accelerated pattern matching execution for Magnetic Resonance Fingerprinting (biomedical applications), in real time detection of space debris trails in astronomical images (space applications) and in brain emulation for image processing (cognitive image processing). We illustrate the potentiality of the PU for the new applications.

Locking of electron spin coherence above 20 ms in natural silicon carbide

NASA Astrophysics Data System (ADS)

Simin, D.; Kraus, H.; Sperlich, A.; Ohshima, T.; Astakhov, G. V.; Dyakonov, V.

2017-04-01

We demonstrate that silicon carbide (SiC) with a natural isotope abundance can preserve a coherent spin superposition in silicon vacancies over an unexpectedly long time exceeding 20 ms. The spin-locked subspace with a drastically reduced decoherence rate is attained through the suppression of heteronuclear spin crosstalking by applying a moderate magnetic field in combination with dynamic decoupling from the nuclear spin baths. Furthermore, we identify several phonon-assisted mechanisms of spin-lattice relaxation and find that it can be extremely long at cryogenic temperatures, equal to or even longer than 10 s. Our approach may be extended to other polyatomic compounds and opens a path towards improved qubit memory for wafer-scale quantum technologies.

Radiation Testing, Characterization and Qualification Challenges for Modern Microelectronics and Photonics Devices and Technologies

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Cohn, Lewis M.

2008-01-01

At GOMAC 2007, we discussed a selection of the challenges for radiation testing of modern semiconductor devices focusing on state-of-the-art memory technologies. This included FLASH non-volatile memories (NVMs) and synchronous dynamic random access memories (SDRAMs). In this presentation, we extend this discussion in device packaging and complexity as well as single event upset (SEU) mechanisms using several technology areas as examples including: system-on-a-chip (SOC) devices and photonic or fiber optic systems. The underlying goal is intended to provoke thought for understanding the limitations and interpretation of radiation testing results.

Ni-Mn-Ga Single Crystal Exhibiting Multiple Magnetic Shape Memory Effects

NASA Astrophysics Data System (ADS)

Heczko, Oleg; Veřtát, Petr; Vronka, Marek; Kopecky, Vít; Perevertov, Oleksiy

2016-09-01

Both magnetically induced phase transformation and magnetically induced reorientation (MIR) effects were observed in one Ni50Mn28Ga22 single crystal sample by direct measurement of the magnetic field-induced strain. We investigated various twinning microstructures ranged from single twin interface to fine twinning and crossing twins to evaluate what controls the apparent twinning stress crucial for MIR. The main challenges for the applications of these effects are outlined.

Memory reorganization following anterior temporal lobe resection: a longitudinal functional MRI study

PubMed Central

Bonelli, Silvia B.; Thompson, Pamela J.; Yogarajah, Mahinda; Powell, Robert H. W.; Samson, Rebecca S.; McEvoy, Andrew W.; Symms, Mark R.; Koepp, Matthias J.

2013-01-01

Anterior temporal lobe resection controls seizures in 50–60% of patients with intractable temporal lobe epilepsy but may impair memory function, typically verbal memory following left, and visual memory following right anterior temporal lobe resection. Functional reorganization can occur within the ipsilateral and contralateral hemispheres. We investigated the reorganization of memory function in patients with temporal lobe epilepsy before and after left or right anterior temporal lobe resection and the efficiency of postoperative memory networks. We studied 46 patients with unilateral medial temporal lobe epilepsy (25/26 left hippocampal sclerosis, 16/20 right hippocampal sclerosis) before and after anterior temporal lobe resection on a 3 T General Electric magnetic resonance imaging scanner. All subjects had neuropsychological testing and performed a functional magnetic resonance imaging memory encoding paradigm for words, pictures and faces, testing verbal and visual memory in a single scanning session, preoperatively and again 4 months after surgery. Event-related analysis revealed that patients with left temporal lobe epilepsy had greater activation in the left posterior medial temporal lobe when successfully encoding words postoperatively than preoperatively. Greater pre- than postoperative activation in the ipsilateral posterior medial temporal lobe for encoding words correlated with better verbal memory outcome after left anterior temporal lobe resection. In contrast, greater postoperative than preoperative activation in the ipsilateral posterior medial temporal lobe correlated with worse postoperative verbal memory performance. These postoperative effects were not observed for visual memory function after right anterior temporal lobe resection. Our findings provide evidence for effective preoperative reorganization of verbal memory function to the ipsilateral posterior medial temporal lobe due to the underlying disease, suggesting that it is the capacity of the posterior remnant of the ipsilateral hippocampus rather than the functional reserve of the contralateral hippocampus that is important for maintaining verbal memory function after anterior temporal lobe resection. Early postoperative reorganization to ipsilateral posterior or contralateral medial temporal lobe structures does not underpin better performance. Additionally our results suggest that visual memory function in right temporal lobe epilepsy is affected differently by right anterior temporal lobe resection than verbal memory in left temporal lobe epilepsy. PMID:23715092

The 10 to the 8th power bit solid state spacecraft data recorder. [utilizing bubble domain memory technology

NASA Technical Reports Server (NTRS)

Murray, G. W.; Bohning, O. D.; Kinoshita, R. Y.; Becker, F. J.

1979-01-01

The results are summarized of a program to demonstrate the feasibility of Bubble Domain Memory Technology as a mass memory medium for spacecraft applications. The design, fabrication and test of a partially populated 10 to the 8th power Bit Data Recorder using 100 Kbit serial bubble memory chips is described. Design tradeoffs, design approach and performance are discussed. This effort resulted in a 10 to the 8th power bit recorder with a volume of 858.6 cu in and a weight of 47.2 pounds. The recorder is plug reconfigurable, having the capability of operating as one, two or four independent serial channel recorders or as a single sixteen bit byte parallel input recorder. Data rates up to 1.2 Mb/s in a serial mode and 2.4 Mb/s in a parallel mode may be supported. Fabrication and test of the recorder demonstrated the basic feasibility of Bubble Domain Memory technology for such applications. Test results indicate the need for improvement in memory element operating temperature range and detector performance.

Associative Memories for Supercomputers

DTIC Science & Technology

1992-12-01

the Si/PLZT technology. Finally, the associative memory system design is presented. 14. SUBJECT TERMS IS NUMBER OF PAGES 60 Memory, Associative Memory...Hybrid lens design ...................................................................... 3 3. ASSOCIATIVE MEMORY STUDY...of California, san Diego 1. OBJECTIVES Our objective during the funding period, July 14 1989 to January 13 1991, was to design and study the

Modeling and design of a vibration energy harvester using the magnetic shape memory effect

NASA Astrophysics Data System (ADS)

Saren, A.; Musiienko, D.; Smith, A. R.; Tellinen, J.; Ullakko, K.

2015-09-01

In this study, a vibration energy harvester is investigated which uses a Ni-Mn-Ga sample that is mechanically strained between 130 and 300 Hz while in a constant biasing magnetic field. The crystallographic reorientation of the sample during mechanical actuation changes its magnetic properties due to the magnetic shape memory (MSM) effect. This leads to an oscillation of the magnetic flux in the yoke which generates electrical energy by inducing an alternating current within the pick-up coils. A power of 69.5 mW (with a corresponding power density of 1.37 mW mm-3 compared to the active volume of the MSM element) at 195 Hz was obtained by optimizing the biasing magnetic field, electrical resistance and electrical resonance. The optimization of the electrical resonance increased the energy generated by nearly a factor of four when compared to a circuit with no resonance. These results are strongly supported by a theoretical model and simulation which gives corresponding values with an error of approximately 20% of the experimental data. This model will be used in the design of future MSM energy harvesters and their optimization for specific frequencies and power outputs.

Mechanocaloric effects in shape memory alloys.

PubMed

Mañosa, Lluís; Planes, Antoni

2016-08-13

Shape memory alloys (SMA) are a class of ferroic materials which undergo a structural (martensitic) transition where the associated ferroic property is a lattice distortion (strain). The sensitiveness of the transition to the conjugated external field (stress), together with the latent heat of the transition, gives rise to giant mechanocaloric effects. In non-magnetic SMA, the lattice distortion is mostly described by a pure shear and the martensitic transition in this family of alloys is strongly affected by uniaxial stress, whereas it is basically insensitive to hydrostatic pressure. As a result, non-magnetic alloys exhibit giant elastocaloric effects but negligible barocaloric effects. By contrast, in a number of magnetic SMA, the lattice distortion at the martensitic transition involves a volume change in addition to the shear strain. Those alloys are affected by both uniaxial stress and hydrostatic pressure and they exhibit giant elastocaloric and barocaloric effects. The paper aims at providing a critical survey of available experimental data on elastocaloric and barocaloric effects in magnetic and non-magnetic SMA.This article is part of the themed issue 'Taking the temperature of phase transitions in cool materials'. © 2016 The Author(s).

Mechanocaloric effects in shape memory alloys

PubMed Central

2016-01-01

Shape memory alloys (SMA) are a class of ferroic materials which undergo a structural (martensitic) transition where the associated ferroic property is a lattice distortion (strain). The sensitiveness of the transition to the conjugated external field (stress), together with the latent heat of the transition, gives rise to giant mechanocaloric effects. In non-magnetic SMA, the lattice distortion is mostly described by a pure shear and the martensitic transition in this family of alloys is strongly affected by uniaxial stress, whereas it is basically insensitive to hydrostatic pressure. As a result, non-magnetic alloys exhibit giant elastocaloric effects but negligible barocaloric effects. By contrast, in a number of magnetic SMA, the lattice distortion at the martensitic transition involves a volume change in addition to the shear strain. Those alloys are affected by both uniaxial stress and hydrostatic pressure and they exhibit giant elastocaloric and barocaloric effects. The paper aims at providing a critical survey of available experimental data on elastocaloric and barocaloric effects in magnetic and non-magnetic SMA. This article is part of the themed issue ‘Taking the temperature of phase transitions in cool materials’. PMID:27402931

Quantum memories: emerging applications and recent advances

NASA Astrophysics Data System (ADS)

Heshami, Khabat; England, Duncan G.; Humphreys, Peter C.; Bustard, Philip J.; Acosta, Victor M.; Nunn, Joshua; Sussman, Benjamin J.

2016-11-01

Quantum light-matter interfaces are at the heart of photonic quantum technologies. Quantum memories for photons, where non-classical states of photons are mapped onto stationary matter states and preserved for subsequent retrieval, are technical realizations enabled by exquisite control over interactions between light and matter. The ability of quantum memories to synchronize probabilistic events makes them a key component in quantum repeaters and quantum computation based on linear optics. This critical feature has motivated many groups to dedicate theoretical and experimental research to develop quantum memory devices. In recent years, exciting new applications, and more advanced developments of quantum memories, have proliferated. In this review, we outline some of the emerging applications of quantum memories in optical signal processing, quantum computation and non-linear optics. We review recent experimental and theoretical developments, and their impacts on more advanced photonic quantum technologies based on quantum memories.

Quantum memories: emerging applications and recent advances.

PubMed

Heshami, Khabat; England, Duncan G; Humphreys, Peter C; Bustard, Philip J; Acosta, Victor M; Nunn, Joshua; Sussman, Benjamin J

2016-11-12

Quantum light-matter interfaces are at the heart of photonic quantum technologies. Quantum memories for photons, where non-classical states of photons are mapped onto stationary matter states and preserved for subsequent retrieval, are technical realizations enabled by exquisite control over interactions between light and matter. The ability of quantum memories to synchronize probabilistic events makes them a key component in quantum repeaters and quantum computation based on linear optics. This critical feature has motivated many groups to dedicate theoretical and experimental research to develop quantum memory devices. In recent years, exciting new applications, and more advanced developments of quantum memories, have proliferated. In this review, we outline some of the emerging applications of quantum memories in optical signal processing, quantum computation and non-linear optics. We review recent experimental and theoretical developments, and their impacts on more advanced photonic quantum technologies based on quantum memories.

Quantum memories: emerging applications and recent advances

PubMed Central

Heshami, Khabat; England, Duncan G.; Humphreys, Peter C.; Bustard, Philip J.; Acosta, Victor M.; Nunn, Joshua; Sussman, Benjamin J.

2016-01-01

Quantum light–matter interfaces are at the heart of photonic quantum technologies. Quantum memories for photons, where non-classical states of photons are mapped onto stationary matter states and preserved for subsequent retrieval, are technical realizations enabled by exquisite control over interactions between light and matter. The ability of quantum memories to synchronize probabilistic events makes them a key component in quantum repeaters and quantum computation based on linear optics. This critical feature has motivated many groups to dedicate theoretical and experimental research to develop quantum memory devices. In recent years, exciting new applications, and more advanced developments of quantum memories, have proliferated. In this review, we outline some of the emerging applications of quantum memories in optical signal processing, quantum computation and non-linear optics. We review recent experimental and theoretical developments, and their impacts on more advanced photonic quantum technologies based on quantum memories. PMID:27695198

Neuroanatomy of episodic and semantic memory in humans: a brief review of neuroimaging studies.

PubMed

García-Lázaro, Haydée G; Ramirez-Carmona, Rocio; Lara-Romero, Ruben; Roldan-Valadez, Ernesto

2012-01-01

One of the most basic functions in every individual and species is memory. Memory is the process by which information is saved as knowledge and retained for further use as needed. Learning is a neurobiological phenomenon by which we acquire certain information from the outside world and is a precursor to memory. Memory consists of the capacity to encode, store, consolidate, and retrieve information. Recently, memory has been defined as a network of connections whose function is primarily to facilitate the long-lasting persistence of learned environmental cues. In this review, we present a brief description of the current classifications of memory networks with a focus on episodic memory and its anatomical substrate. We also present a brief review of the anatomical basis of memory systems and the most commonly used neuroimaging methods to assess memory, illustrated with magnetic resonance imaging images depicting the hippocampus, temporal lobe, and hippocampal formation, which are the main brain structures participating in memory networks.

Memory for color reactivates color processing region.

PubMed

Slotnick, Scott D

2009-11-25

Memory is thought to be constructive in nature, where features processed in different cortical regions are synthesized during retrieval. In an effort to support this constructive memory framework, the present functional magnetic resonance imaging study assessed whether memory for color reactivated color processing regions. During encoding, participants were presented with colored and gray abstract shapes. During retrieval, old and new shapes were presented in gray and participants responded 'old-colored', 'old-gray', or 'new'. Within color perception regions, color memory related activity was observed in the left fusiform gyrus, adjacent to the collateral sulcus. A retinotopic mapping analysis indicated this activity occurred within color processing region V8. The present feature specific evidence provides compelling support for a constructive view of memory.

Radiation Test Challenges for Scaled Commerical Memories

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Ladbury, Ray L.; Cohn, Lewis M.; Oldham, Timothy

2007-01-01

As sub-100nm CMOS technologies gather interest, the radiation effects performance of these technologies provide a significant challenge. In this talk, we shall discuss the radiation testing challenges as related to commercial memory devices. The focus will be on complex test and failure modes emerging in state-of-the-art Flash non-volatile memories (NVMs) and synchronous dynamic random access memories (SDRAMs), which are volatile. Due to their very high bit density, these device types are highly desirable for use in the natural space environment. In this presentation, we shall discuss these devices with emphasis on considerations for test and qualification methods required.

Mesohysteresis model for ferromagnetic materials by minimization of the micromagnetic free energy

NASA Astrophysics Data System (ADS)

van den Berg, A.; Dupré, L.; Van de Wiele, B.; Crevecoeur, G.

2009-04-01

To study the connection between macroscopic hysteretic behavior and the microstructural properties, this paper presents and validates a new material dependent three-dimensional mesoscopic magnetic hysteresis model. In the presented mesoscopic description, the different micromagnetic energy terms are reformulated on the space scale of the magnetic domains. The sample is discretized in cubic cells, each with a local stress state, local bcc crystallographic axes, etc. The magnetization is assumed to align with one of the three crystallographic axes, in positive or negative sense, defining six volume fractions within each cell. The micromagnetic Gibbs free energy is described in terms of these volume fractions. Hysteresis loops are computed by minimizing the mesoscopic Gibbs free energy using a modified gradient search for a sequence of external applied fields. To validate the mesohysteresis model, we studied the magnetic memory properties. Numerical experiments reveal that (1) minor hysteresis loops are indeed closed and (2) the closed minor loops are erased from the memory.

Effect of atomic order on the martensitic and magnetic transformations in Ni-Mn-Ga ferromagnetic shape memory alloys.

PubMed

Sánchez-Alarcos, V; Pérez-Landazábal, J I; Recarte, V; Rodríguez-Velamazán, J A; Chernenko, V A

2010-04-28

The influence of long-range L2(1) atomic order on the martensitic and magnetic transformations of Ni-Mn-Ga shape memory alloys has been investigated. In order to correlate the structural and magnetic transformation temperatures with the atomic order, calorimetric, magnetic and neutron diffraction measurements have been performed on polycrystalline and single-crystalline alloys subjected to different thermal treatments. It is found that both transformation temperatures increase with increasing atomic order, showing exactly the same linear dependence on the degree of L2(1) atomic order. A quantitative correlation between atomic order and transformation temperatures has been established, from which the effect of atomic order on the relative stability between the structural phases has been quantified. On the other hand, the kinetics of the post-quench ordering process taking place in these alloys has been studied. It is shown that the activation energy of the ordering process agrees quite well with the activation energy of the Mn self-diffusion process.

Neural mechanisms of working memory in ecstasy (MDMA) users who continue or discontinue ecstasy and amphetamine use: evidence from an 18-month longitudinal functional magnetic resonance imaging study.

PubMed

Daumann, Jörg; Fischermann, Thomas; Heekeren, Karsten; Thron, Armin; Gouzoulis-Mayfrank, Euphrosyne

2004-09-01

Working memory processing in ecstasy (3,4-methylenedioxymethamphetamine) users is associated with neural alterations as measured by functional magnetic resonance imaging. Here, we examined whether cortical activation patterns change after prolonged periods of continued use or abstinence from ecstasy and amphetamine. We used an n-back task and functional magnetic resonance imaging in 17 ecstasy users at baseline (t(1)) and after 18 months (t(2)). Based on the reported drug use at t(2) we separated subjects with continued ecstasy and amphetamine use from subjects reporting abstinence during the follow-up period (n = 9 and n = 8, respectively). At baseline both groups had similar task performance and similar cortical activation patterns. Task performance remained unchanged in both groups. Furthermore, there were no detectable functional magnetic resonance imaging signal changes from t(1) to t(2) in the follow-up abstinent group. However, the continuing users showed a dose-dependent increased parietal activation for the 2-back task after the follow-up period. Our data suggest that ecstasy use, particularly in high doses, is associated with greater parietal activation during working memory performance. An altered activation pattern might appear before changes in cognitive performance become apparent and, hence, may reflect an early stage of neuronal injury from the neurotoxic drug ecstasy.

Ionic Liquid Gating Control of Spin Reorientation Transition and Switching of Perpendicular Magnetic Anisotropy.

PubMed

Zhao, Shishun; Wang, Lei; Zhou, Ziyao; Li, Chunlei; Dong, Guohua; Zhang, Le; Peng, Bin; Min, Tai; Hu, Zhongqiang; Ma, Jing; Ren, Wei; Ye, Zuo-Guang; Chen, Wei; Yu, Pu; Nan, Ce-Wen; Liu, Ming

2018-05-29

Electric field (E-field) modulation of perpendicular magnetic anisotropy (PMA) switching, in an energy-efficient manner, is of great potential to realize magnetoelectric (ME) memories and other ME devices. Voltage control of the spin-reorientation transition (SRT) that allows the magnetic moment rotating between the out-of-plane and the in-plane direction is thereby crucial. In this work, a remarkable magnetic anisotropy field change up to 1572 Oe is achieved under a small operation voltage of 4 V through ionic liquid (IL) gating control of SRT in Au/[DEME] + [TFSI] - /Pt/(Co/Pt) 2 /Ta capacitor heterostructures at room temperature, corresponding to a large ME coefficient of 378 Oe V -1 . As revealed by both ferromagnetic resonance measurements and magnetic domain evolution observation, the magnetization can be switched stably and reversibly between the out-of-plane and in-plane directions via IL gating. The key mechanism, revealed by the first-principles calculation, is that the IL gating process influences the interfacial spin-orbital coupling as well as net Rashba magnetic field between the Co and Pt layers, resulting in the modulation of the SRT and in-plane/out-of-plane magnetization switching. This work demonstrates a unique IL-gated PMA with large ME tunability and paves a way toward IL gating spintronic/electronic devices such as voltage tunable PMA memories. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Julius Edgar Lilienfeld Prize Talk: Quantum spintronics: abandoning perfection for new technologies

NASA Astrophysics Data System (ADS)

Awschalom, David D.

2015-03-01

There is a growing interest in exploiting the quantum properties of electronic and nuclear spins for the manipulation and storage of information in the solid state. Such schemes offer qualitatively new scientific and technological opportunities by leveraging elements of standard electronics to precisely control coherent interactions between electrons, nuclei, and electromagnetic fields. We provide an overview of the field, including a discussion of temporally- and spatially-resolved magneto-optical measurements designed for probing local moment dynamics in electrically and magnetically doped semiconductor nanostructures. These early studies provided a surprising proof-of-concept that quantum spin states can be created and controlled with high-speed optoelectronic techniques. However, as electronic structures approach the atomic scale, small amounts of disorder begin to have outsized negative effects. An intriguing solution to this conundrum is emerging from recent efforts to embrace semiconductor defects themselves as a route towards quantum machines. Individual defects in carbon-based materials possess an electronic spin state that can be employed as a solid state quantum bit at and above room temperature. Developments at the frontier of this field include gigahertz coherent control, nanofabricated spin arrays, nuclear spin quantum memories, and nanometer-scale sensing. We will describe advances towards quantum information processing driven by both physics and materials science to explore electronic, photonic, and magnetic control of spin. Work supported by the AFOSR, ARO, DARPA, NSF, and ONR.

Hemispheric Lateralization of Verbal and Spatial Working Memory during Adolescence

ERIC Educational Resources Information Center

Nagel, Bonnie J.; Herting, Megan M.; Maxwell, Emily C.; Bruno, Richard; Fair, Damien

2013-01-01

Adult functional magnetic resonance imaging (fMRI) literature suggests that a left-right hemispheric dissociation may exist between verbal and spatial working memory (WM), respectively. However, investigation of this type has been obscured by incomparable verbal and spatial WM tasks and/or visual inspection at arbitrary thresholds as means to…

The Hippocampus Supports Encoding of Between-Domain Associations within Working Memory

ERIC Educational Resources Information Center

Piekema, Carinne; Kessel, Roy P. C.; Rijpkema, Mark; Fernandez, Guillen

2009-01-01

It has been established that the medial temporal lobe, including the hippocampus, is crucial for associative memory. The aim of the current functional magnetic resonance imaging (fMRI) study was to investigate whether the hippocampus is differentially activated for associations between items processed in the same neocortical region (within-domain)…

Cannabis Use and Memory Brain Function in Adolescent Boys: A Cross-Sectional Multicenter Functional Magnetic Resonance Imaging Study

ERIC Educational Resources Information Center

Jager, Gerry; Block, Robert I.; Luijten, Maartje; Ramsey, Nick F.

2010-01-01

Objective: Early-onset cannabis use has been associated with later use/abuse, mental health problems (psychosis, depression), and abnormal development of cognition and brain function. During adolescence, ongoing neurodevelopmental maturation and experience shape the neural circuitry underlying complex cognitive functions such as memory and…

Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility

NASA Astrophysics Data System (ADS)

Olejník, K.; Schuler, V.; Marti, X.; Novák, V.; Kašpar, Z.; Wadley, P.; Campion, R. P.; Edmonds, K. W.; Gallagher, B. L.; Garces, J.; Baumgartner, M.; Gambardella, P.; Jungwirth, T.

2017-05-01

Antiferromagnets offer a unique combination of properties including the radiation and magnetic field hardness, the absence of stray magnetic fields, and the spin-dynamics frequency scale in terahertz. Recent experiments have demonstrated that relativistic spin-orbit torques can provide the means for an efficient electric control of antiferromagnetic moments. Here we show that elementary-shape memory cells fabricated from a single-layer antiferromagnet CuMnAs deposited on a III-V or Si substrate have deterministic multi-level switching characteristics. They allow for counting and recording thousands of input pulses and responding to pulses of lengths downscaled to hundreds of picoseconds. To demonstrate the compatibility with common microelectronic circuitry, we implemented the antiferromagnetic bit cell in a standard printed circuit board managed and powered at ambient conditions by a computer via a USB interface. Our results open a path towards specialized embedded memory-logic applications and ultra-fast components based on antiferromagnets.

Quantum memory enhanced nuclear magnetic resonance of nanometer-scale samples with a single spin in diamond

NASA Astrophysics Data System (ADS)

Aslam, Nabeel; Pfender, Matthias; Zaiser, Sebastian; Favaro de Oliveira, Felipe; Momenzadeh, S. Ali; Denisenko, Andrej; Isoya, Junichi; Neumann, Philipp; Wrachtrup, Joerg

Recently nuclear magnetic resonance (NMR) of nanoscale samples at ambient conditions has been achieved with nitrogen-vacancy (NV) centers in diamond. So far the spectral resolution in the NV NMR experiments was limited by the sensor's coherence time, which in turn prohibited revealing the chemical composition and dynamics of the system under investigation. By entangling the NV electron spin sensor with a long-lived memory spin qubit we increase the spectral resolution of NMR measurement sequences for the detection of external nuclear spins. Applying the latter sensor-memory-couple it is particularly easy to track diffusion processes, to identify the molecules under study and to deduce the actual NV center depth inside the diamond. We performed nanoscale NMR on several liquid and solid samples exhibiting unique NMR response. Our method paves the way for nanoscale identification of molecule and protein structures and dynamics of conformational changes.

Retrieval of long and short lists from long term memory: a functional magnetic resonance imaging study with human subjects.

PubMed

Zysset, S; Müller, K; Lehmann, C; Thöne-Otto, A I; von Cramon, D Y

2001-11-13

Previous studies have shown that reaction time in an item-recognition task with both short and long lists is a quadratic function of list length. This suggests that either different memory retrieval processes are implied for short and long lists or an adaptive process is involved. An event-related functional magnetic resonance imaging study with nine subjects and list lengths varying between 3 and 18 words was conducted to identify the underlying neuronal structures of retrieval from long and short lists. For the retrieval and processing of word-lists a single fronto-parietal network, including premotor, left prefrontal, left precuneal and left parietal regions, was activated. With increasing list length, no additional regions became involved in retrieving information from long-term memory, suggesting that not necessarily different, but highly adaptive retrieval processes are involved.

Quantifying data retention of perpendicular spin-transfer-torque magnetic random access memory chips using an effective thermal stability factor method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thomas, Luc, E-mail: luc.thomas@headway.com; Jan, Guenole; Le, Son

The thermal stability of perpendicular Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) devices is investigated at chip level. Experimental data are analyzed in the framework of the Néel-Brown model including distributions of the thermal stability factor Δ. We show that in the low error rate regime important for applications, the effect of distributions of Δ can be described by a single quantity, the effective thermal stability factor Δ{sub eff}, which encompasses both the median and the standard deviation of the distributions. Data retention of memory chips can be assessed accurately by measuring Δ{sub eff} as a function of device diameter andmore » temperature. We apply this method to show that 54 nm devices based on our perpendicular STT-MRAM design meet our 10 year data retention target up to 120 °C.« less

EDITORIAL: Cluster issue on fine particle magnetism

NASA Astrophysics Data System (ADS)

Fiorani, D.

2008-07-01

This Cluster issue of Journal of Physics D: Applied Physics arises from the 6th International Conference on Fine Particle Magnetism (ICFPM) held in Rome during 9-12 October 2007 at the headquarters of the National Research Council (NCR). It contains a collection of papers based on both invited and contributed presentations at the meeting. The ICFPM Conferences have previously been held in Rome, Italy (1991), Bangor, UK (1996), Barcelona, Spain (1999), Pittsburgh, USA (2002) and London, UK (2004). The aim of this series of Conferences is to bring together the experts in the field of nanoparticle magnetism at a single forum to discuss recent developments in both theoretical and experimental aspects, and technological applications. The Conference programme included sessions on: new materials, novel synthesis and processing techniques, with special emphasis on self-organized magnetic arrays; theory and modelling; surface and interface properties; transport properties; spin dynamics; magnetization reversal mechanisms; magnetic recording media and permanent magnets; biomedical applications and advanced investigation techniques. I would like to thank the European Physical Society and the Innovative Magnetic and Superconducting Materials and Devices Project of the Materials and Devices Department and the Institute of Structure of Matter (ISM) of CNR for their support. Thanks are also due to the members of the Programme Committee, to the local Organizing Committee, chaired by Elisabetta Agostinelli and to all the Conference participants. I am also indebted to the many scientists who contributed to assuring the high-quality of this Cluster by donating their time to reviewing the manuscripts contained herein. Finally, I'd like to dedicate this issue to the memories of Jean Louis Dormann, a great expert in nanoparticle magnetism, who was one of the promoters and first organizers of this series of Conferences, and of Grazia Ianni, the Conference secretary, who died before her time after having enthusiastically started to contribute to the organization of this Conference.

Neonatal brain abnormalities and memory and learning outcomes at 7 years in children born very preterm.

PubMed

Omizzolo, Cristina; Scratch, Shannon E; Stargatt, Robyn; Kidokoro, Hiroyuki; Thompson, Deanne K; Lee, Katherine J; Cheong, Jeanie; Neil, Jeffrey; Inder, Terrie E; Doyle, Lex W; Anderson, Peter J

2014-01-01

Using prospective longitudinal data from 198 very preterm and 70 full term children, this study characterised the memory and learning abilities of very preterm children at 7 years of age in both verbal and visual domains. The relationship between the extent of brain abnormalities on neonatal magnetic resonance imaging (MRI) and memory and learning outcomes at 7 years of age in very preterm children was also investigated. Neonatal MRI scans were qualitatively assessed for global, white-matter, cortical grey-matter, deep grey-matter, and cerebellar abnormalities. Very preterm children performed less well on measures of immediate memory, working memory, long-term memory, and learning compared with term-born controls. Neonatal brain abnormalities, and in particular deep grey-matter abnormality, were associated with poorer memory and learning performance at 7 years in very preterm children. Findings support the importance of cerebral neonatal pathology for predicting later memory and learning function.

Messier: A Detailed NVM-Based DIMM Model for the SST Simulation Framework.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Awad, Amro; Voskuilen, Gwendolyn Renae; Rodrigues, Arun F.

2017-02-01

DRAM technology is the main building block of main memory, however, DRAM scaling is becoming very challenging. The main issues for DRAM scaling are the increasing error rates with each new generation, the geometric and physical constraints of scaling the capacitor part of the DRAM cells, and the high power consumption caused by the continuous need for refreshing cell values. At the same time, emerging Non- Volatile Memory (NVM) technologies, such as Phase-Change Memory (PCM), are emerging as promising replacements for DRAM. NVMs, when compared to current technologies e.g., NAND-based ash, have latencies comparable to DRAM. Additionally, NVMs are non-volatile,more » which eliminates the need for refresh power and enables persistent memory applications. Finally, NVMs have promising densities and the potential for multi-level cell (MLC) storage.« less

A Content-Addressable Memory structure using quantum cells in nanotechnology with energy dissipation analysis

NASA Astrophysics Data System (ADS)

Sadoghifar, Ali; Heikalabad, Saeed Rasouli

2018-05-01

Quantum-dot cellular automata is one of the recent new technologies at the nanoscale that can be a suitable replacement for CMOS technology. The circuits constructed in QCA technology have desirable features such as low power consumption, high speed and small size. These features can be more distinct in memory structures. In this paper, we design a new structure for content addressable memory cell in QCA. For this purpose, first, a unique gate is introduced for mask operation in QCA and then this gate is used to improve the performance of CAM. These structures are evaluated with QCADesigner simulator.

Quantum percolation phase transition and magnetoelectric dipole glass in hexagonal ferrites

NASA Astrophysics Data System (ADS)

Rowley, S. E.; Vojta, T.; Jones, A. T.; Guo, W.; Oliveira, J.; Morrison, F. D.; Lindfield, N.; Baggio Saitovitch, E.; Watts, B. E.; Scott, J. F.

2017-07-01

Hexagonal ferrites not only have enormous commercial impact (£2 billion/year in sales) due to applications that include ultrahigh-density memories, credit-card stripes, magnetic bar codes, small motors, and low-loss microwave devices, they also have fascinating magnetic and ferroelectric quantum properties at low temperatures. Here we report the results of tuning the magnetic ordering temperature in PbF e12 -xG axO19 to zero by chemical substitution x . The phase transition boundary is found to vary as TN˜(1-x /xc ) 2 /3 with xc very close to the calculated spin percolation threshold, which we determine by Monte Carlo simulations, indicating that the zero-temperature phase transition is geometrically driven. We find that this produces a form of compositionally tuned, insulating, ferrimagnetic quantum criticality. Close to the zero-temperature phase transition, we observe the emergence of an electric dipole glass induced by magnetoelectric coupling. The strong frequency behavior of the glass freezing temperature Tm has a Vogel-Fulcher dependence with Tm finite, or suppressed below zero in the zero-frequency limit, depending on composition x . These quantum-mechanical properties, along with the multiplicity of low-lying modes near the zero-temperature phase transition, are likely to greatly extend applications of hexaferrites into the realm of quantum and cryogenic technologies.

Thin Co/Ni-based bottom pinned spin-transfer torque magnetic random access memory stacks with high annealing tolerance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tomczak, Y., E-mail: Yoann.Tomczak@imec.be; Department of Chemistry, KU Leuven; Swerts, J.

2016-01-25

Spin-transfer torque magnetic random access memory (STT-MRAM) is considered as a replacement for next generation embedded and stand-alone memory applications. One of the main challenges in the STT-MRAM stack development is the compatibility of the stack with CMOS process flows in which thermal budgets up to 400 °C are applied. In this letter, we report on a perpendicularly magnetized MgO-based tunnel junction (p-MTJ) on a thin Co/Ni perpendicular synthetic antiferromagnetic layer with high annealing tolerance. Tunnel magneto resistance (TMR) loss after annealing occurs when the reference layer loses its perpendicular magnetic anisotropy due to reduction of the CoFeB/MgO interfacial anisotropy. Amore » stable Co/Ni based p-MTJ stack with TMR values of 130% at resistance-area products of 9 Ω μm{sup 2} after 400 °C anneal is achieved via moment control of the Co/Ta/CoFeB reference layer. Thinning of the CoFeB polarizing layer down to 0.8 nm is the key enabler to achieve 400 °C compatibility with limited TMR loss. Thinning the Co below 0.6 nm leads to a loss of the antiferromagnetic interlayer exchange coupling strength through Ru. Insight into the thickness and moment engineering of the reference layer is displayed to obtain the best magnetic properties and high thermal stability for thin Co/Ni SAF-based STT-MRAM stacks.« less

Residual stresses in injection molded shape memory polymer parts

NASA Astrophysics Data System (ADS)

Katmer, Sukran; Esen, Huseyin; Karatas, Cetin

2016-03-01

Shape memory polymers (SMPs) are materials which have shape memory effect (SME). SME is a property which has the ability to change shape when induced by a stimulator such as temperature, moisture, pH, electric current, magnetic field, light, etc. A process, known as programming, is applied to SMP parts in order to alter them from their permanent shape to their temporary shape. In this study we investigated effects of injection molding and programming processes on residual stresses in molded thermoplastic polyurethane shape memory polymer, experimentally. The residual stresses were measured by layer removal method. The study shows that injection molding and programming process conditions have significantly influence on residual stresses in molded shape memory polyurethane parts.

Greater neural pattern similarity across repetitions is associated with better memory.

PubMed

Xue, Gui; Dong, Qi; Chen, Chuansheng; Lu, Zhonglin; Mumford, Jeanette A; Poldrack, Russell A

2010-10-01

Repeated study improves memory, but the underlying neural mechanisms of this improvement are not well understood. Using functional magnetic resonance imaging and representational similarity analysis of brain activity, we found that, compared with forgotten items, subsequently remembered faces and words showed greater similarity in neural activation across multiple study in many brain regions, including (but not limited to) the regions whose mean activities were correlated with subsequent memory. This result addresses a longstanding debate in the study of memory by showing that successful episodic memory encoding occurs when the same neural representations are more precisely reactivated across study episodes, rather than when patterns of activation are more variable across time.

Interface engineered ferrite@ferroelectric core-shell nanostructures: A facile approach to impart superior magneto-electric coupling

NASA Astrophysics Data System (ADS)

Abraham, Ann Rose; Raneesh, B.; Das, Dipankar; Oluwafemi, Oluwatobi Samuel; Thomas, Sabu; Kalarikkal, Nandakumar

2018-04-01

The electric field control of magnetism in multiferroics is attractive for the realization of ultra-fast and miniaturized low power device applications like nonvolatile memories. Room temperature hybrid multiferroic heterostructures with core-shell (0-0) architecture (ferrite core and ferroelectric shell) were developed via a two-step method. High-Resolution Transmission Electron Microscopy (HRTEM) images confirm the core-shell structure. The temperature dependant magnetization measurements and Mossbauer spectra reveal superparamagnetic nature of the core-shell sample. The ferroelectric hysteresis loops reveal leaky nature of the samples. The results indicate the promising applications of the samples for magneto-electric memories and spintronics.

A functional magnetic resonance imaging investigation of episodic memory after traumatic brain injury.

PubMed

Russell, Kathryn C; Arenth, Patricia M; Scanlon, Joelle M; Kessler, Lauren J; Ricker, Joseph H

2011-06-01

Traumatic brain injury often negatively impacts episodic memory; however, studies of the neural substrates of this impairment have been limited. In this study, both encoding and recognition of visually presented stimuli were examined with functional magnetic resonance imaging. Twelve adults with chronic complicated mild, moderate, and severe injuries were compared with a matched group of 12 controls. Behavioral task performance did not differentiate the groups. During neuroimaging, however, the group of individuals with traumatic brain injury exhibited increased activation, as well as increased bilaterality and dispersion as compared to controls. Findings are discussed in terms of increased resource recruitment.

Elastic Constants of Ni-Mn-Ga Magnetic Shape Memory Alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stipcich, M.; Manosa, L.; Planes, A.

2004-01-01

We have measured the adiabatic second order elastic constants of two Ni-Mn-Ga magnetic shape memory crystals with different martensitic transition temperatures, using ultrasonic methods. The temperature dependence of the elastic constants has been followed across the ferromagnetic transition and down to the martensitic transition temperature. Within experimental errors no noticeable change in any of the elastic constants has been observed at the Curie point. The temperature dependence of the shear elastic constant C' has been found to be very different for the two alloys. Such a different behavior is in agreement with recent theoretical predictions for systems undergoing multi-stage structuralmore » transitions.« less

Effects of the substitution of gallium with boron on the physical and mechanical properties of Ni-Mn-Ga shape memory alloys

NASA Astrophysics Data System (ADS)

Aydogdu, Yildirim; Turabi, Ali Sadi; Kok, Mediha; Aydogdu, Ayse; Tobe, Hirobumi; Karaca, Haluk Ersin

2014-12-01

The effects of the substitution of gallium with boron on the physical, mechanical and magnetic shape memory properties of Ni51Mn28.5Ga20.5- xBx (at.%) ( x = 0, 1, 2, 3) polycrystalline alloys are investigated. It has been found that transformation temperatures are decreasing while hardness is increasing with boron addition. B-doping of NiMnGa alloys results in the formation of a second phase that increases its ductility and strength in compression. Moreover, saturation magnetization of austenite is decreasing, while Curie temperature of austenite is increasing with B-doping.

Is magnetite a universal memory molecule?

PubMed

Størmer, Fredrik C

2014-11-01

Human stem cells possess memory, and consequently all living human cells must have a memory system. How memory is stored in cells and organisms is an open question. Magnetite is perhaps the best candidate to be a universal memory molecule. Magnetite may give us a clue, because it is the Earth's most distributed and important magnetic material. It is found in living organisms with no known functions except for involvement in navigation in some organisms. In humans magnetite is found in the brain, heart, liver and spleen. Humans suffer from memory dysfunctions in many cases when iron is out of balance. Anomalous concentrations of magnetite is known to be associated with a neurodegenerative disorder like Alzheimer's disease. Due to the rapid speed and accuracy of our brain, memory and its functions must be governed by quantum mechanics. Copyright © 2014 Elsevier Ltd. All rights reserved.

Awake, Offline Processing during Associative Learning

PubMed Central

Nestor, Adrian; Tarr, Michael J.; Creswell, J. David

2016-01-01

Offline processing has been shown to strengthen memory traces and enhance learning in the absence of conscious rehearsal or awareness. Here we evaluate whether a brief, two-minute offline processing period can boost associative learning and test a memory reactivation account for these offline processing effects. After encoding paired associates, subjects either completed a distractor task for two minutes or were immediately tested for memory of the pairs in a counterbalanced, within-subjects functional magnetic resonance imaging study. Results showed that brief, awake, offline processing improves memory for associate pairs. Moreover, multi-voxel pattern analysis of the neuroimaging data suggested reactivation of encoded memory representations in dorsolateral prefrontal cortex during offline processing. These results signify the first demonstration of awake, active, offline enhancement of associative memory and suggest that such enhancement is accompanied by the offline reactivation of encoded memory representations. PMID:27119345

Awake, Offline Processing during Associative Learning.

PubMed

Bursley, James K; Nestor, Adrian; Tarr, Michael J; Creswell, J David

2016-01-01

Offline processing has been shown to strengthen memory traces and enhance learning in the absence of conscious rehearsal or awareness. Here we evaluate whether a brief, two-minute offline processing period can boost associative learning and test a memory reactivation account for these offline processing effects. After encoding paired associates, subjects either completed a distractor task for two minutes or were immediately tested for memory of the pairs in a counterbalanced, within-subjects functional magnetic resonance imaging study. Results showed that brief, awake, offline processing improves memory for associate pairs. Moreover, multi-voxel pattern analysis of the neuroimaging data suggested reactivation of encoded memory representations in dorsolateral prefrontal cortex during offline processing. These results signify the first demonstration of awake, active, offline enhancement of associative memory and suggest that such enhancement is accompanied by the offline reactivation of encoded memory representations.

Research on fast Fourier transforms algorithm of huge remote sensing image technology with GPU and partitioning technology.

PubMed

Yang, Xue; Li, Xue-You; Li, Jia-Guo; Ma, Jun; Zhang, Li; Yang, Jan; Du, Quan-Ye

2014-02-01

Fast Fourier transforms (FFT) is a basic approach to remote sensing image processing. With the improvement of capacity of remote sensing image capture with the features of hyperspectrum, high spatial resolution and high temporal resolution, how to use FFT technology to efficiently process huge remote sensing image becomes the critical step and research hot spot of current image processing technology. FFT algorithm, one of the basic algorithms of image processing, can be used for stripe noise removal, image compression, image registration, etc. in processing remote sensing image. CUFFT function library is the FFT algorithm library based on CPU and FFTW. FFTW is a FFT algorithm developed based on CPU in PC platform, and is currently the fastest CPU based FFT algorithm function library. However there is a common problem that once the available memory or memory is less than the capacity of image, there will be out of memory or memory overflow when using the above two methods to realize image FFT arithmetic. To address this problem, a CPU and partitioning technology based Huge Remote Fast Fourier Transform (HRFFT) algorithm is proposed in this paper. By improving the FFT algorithm in CUFFT function library, the problem of out of memory and memory overflow is solved. Moreover, this method is proved rational by experiment combined with the CCD image of HJ-1A satellite. When applied to practical image processing, it improves effect of the image processing, speeds up the processing, which saves the time of computation and achieves sound result.

Giant and universal magnetoelectric coupling in soft materials and concomitant ramifications for materials science and biology

NASA Astrophysics Data System (ADS)

Liu, Liping; Sharma, Pradeep

2013-10-01

Magnetoelectric coupling—the ability of a material to magnetize upon application of an electric field and, conversely, to polarize under the action of a magnetic field—is rare and restricted to a rather small set of exotic hard crystalline materials. Intense research activity has recently ensued on materials development, fundamental scientific issues, and applications related to this phenomenon. This tantalizing property, if present in adequate strength at room temperature, can be used to pave the way for next-generation memory devices such as miniature magnetic random access memories and multiple state memory bits, sensors, energy harvesting, spintronics, among others. In this Rapid Communication, we prove the existence of an overlooked strain mediated nonlinear mechanism that can be used to universally induce the giant magnetoelectric effect in all (sufficiently) soft dielectric materials. For soft polymer foams—which, for instance, may be used in stretchable electronics—we predict room-temperature magnetoelectric coefficients that are comparable to the best known (hard) composite materials created. We also argue, based on a simple quantitative model, that magnetoreception in some biological contexts (e.g., birds) most likely utilizes this very mechanism.

Characteristics of 5M modulated martensite in Ni-Mn-Ga magnetic shape memory alloys

NASA Astrophysics Data System (ADS)

Ćakır, A.; Acet, M.; Righi, L.; Albertini, F.; Farle, M.

2015-09-01

The applicability of the magnetic shape memory effect in Ni-Mn-based martensitic Heusler alloys is closely related to the nature of the crystallographically modulated martensite phase in these materials. We study the properties of modulated phases as a function of temperature and composition in three magnetic shape memory alloys Ni49.8Mn25.0Ga25.2, Ni49.8Mn27.1Ga23.1 and Ni49.5Mn28.6Ga21.9. The effect of substituting Ga for Mn leads to an anisotropic expansion of the lattice, where the b-parameter of the 5M modulated structure increases and the a and c-parameters decrease with increasing Ga concentration. The modulation vector is found to be both temperature and composition dependent. The size of the modulation vector corresponds to an incommensurate structure for Ni49.8Mn25.0Ga25.2 at all temperatures. For the other samples the modulation is incommensurate at low temperatures but reaches a commensurate value of q ≈ 0.400 close to room temperature. The results show that commensurateness of the 5M modulated structure is a special case of incommensurate 5M at a particular temperature.

The effect of external magnetic field changing on the correlated quantum dot dynamics

NASA Astrophysics Data System (ADS)

Mantsevich, V. N.; Maslova, N. S.; Arseyev, P. I.

2018-06-01

The non-stationary response of local magnetic moment to abrupt switching "on" and "off" of external magnetic field was studied for a single-level quantum dot (QD) coupled to a reservoir. We found that transient processes look different for the shallow and deep localized energy level. It was demonstrated that for deep energy level the relaxation rates of the local magnetic moment strongly differ in the case of magnetic field switching "on" or "off". Obtained results can be applied in the area of dynamic memory devices stabilization in the presence of magnetic field.

Precessional switching of a perpendicular anisotropy magneto-tunneling junction without a magnetic field

NASA Astrophysics Data System (ADS)

Drobitch, Justine L.; Ahsanul Abeed, Md; Bandyopadhyay, Supriyo

2017-10-01

We describe an approach to implement precessional switching of a perpendicular-magnetic-anisotropy magneto-tunneling-junction (p-MTJ) without using any magnetic field. The switching is accomplished with voltage-controlled-magnetic-anisotropy (VCMA), spin transfer torque (STT) and mechanical strain. The soft layer of the p-MTJ is magnetostrictive and the strain acts as an effective in-plane magnetic field around which the magnetization of the soft layer precesses to complete a flip. A two-terminal energy-efficient p-MTJ based memory cell, that is compatible with crossbar architecture and high cell density, is designed.

Principles and Concepts for Information and Communication Technology Design.

ERIC Educational Resources Information Center

Adams, Ray; Langdon, Patrick

2003-01-01

This article presents a theory for evaluating information and communication technology design for individuals with disabilities. Simplex 1 evaluates designs in five zones: sensory and input zone; output zone; abstract working memory; long-term memory; and central executive functioning. Simplex 2 evaluates feedback, emotional responses, cognitive…

The Use of Digital Narratives to Enhance Counseling and Psychotherapy

ERIC Educational Resources Information Center

Pillay, Yegan

2009-01-01

Technological advances have impinged on every aspect of contemporary phenomenological experiences, including counseling and psychotherapy. The author explores the intersection of narrative therapy, specifically the traditional memory book, with the advances in information technology in the formulation of the digital memory book. The digital memory…

Magnetic moment distribution modeling in non stoichiometric Ni-Mn-Ga ferromagnetic shape memory alloys

NASA Astrophysics Data System (ADS)

Lázpita, P.; Gutiérrez, J.; Barandiarán, J. M.; Chernenko, V. A.; Mondelli, C.; Chapon, L.

2014-11-01

Neutron polarized diffraction technique has been used to elucidate the magnetic moment distribution density in non stoichiometric Ni—Mn—Ga single crystals. These experiments allow us to determine a localized magnetic moment in the Mn position in the austenitic phase, and to validity qualitatively previous models of magnetic distributions where there are antiferromagnetic and ferromagnetic coupling for Mn atoms that are sited out of their properly positions. This measurements show the deep dependence of the magnetic moment with the composition and the atomic order.

Nanoscale thermal transport. II. 2003-2012

NASA Astrophysics Data System (ADS)

Cahill, David G.; Braun, Paul V.; Chen, Gang; Clarke, David R.; Fan, Shanhui; Goodson, Kenneth E.; Keblinski, Pawel; King, William P.; Mahan, Gerald D.; Majumdar, Arun; Maris, Humphrey J.; Phillpot, Simon R.; Pop, Eric; Shi, Li

2014-03-01

A diverse spectrum of technology drivers such as improved thermal barriers, higher efficiency thermoelectric energy conversion, phase-change memory, heat-assisted magnetic recording, thermal management of nanoscale electronics, and nanoparticles for thermal medical therapies are motivating studies of the applied physics of thermal transport at the nanoscale. This review emphasizes developments in experiment, theory, and computation in the past ten years and summarizes the present status of the field. Interfaces become increasingly important on small length scales. Research during the past decade has extended studies of interfaces between simple metals and inorganic crystals to interfaces with molecular materials and liquids with systematic control of interface chemistry and physics. At separations on the order of ˜ 1 nm , the science of radiative transport through nanoscale gaps overlaps with thermal conduction by the coupling of electronic and vibrational excitations across weakly bonded or rough interfaces between materials. Major advances in the physics of phonons include first principles calculation of the phonon lifetimes of simple crystals and application of the predicted scattering rates in parameter-free calculations of the thermal conductivity. Progress in the control of thermal transport at the nanoscale is critical to continued advances in the density of information that can be stored in phase change memory devices and new generations of magnetic storage that will use highly localized heat sources to reduce the coercivity of magnetic media. Ultralow thermal conductivity—thermal conductivity below the conventionally predicted minimum thermal conductivity—has been observed in nanolaminates and disordered crystals with strong anisotropy. Advances in metrology by time-domain thermoreflectance have made measurements of the thermal conductivity of a thin layer with micron-scale spatial resolution relatively routine. Scanning thermal microscopy and thermal analysis using proximal probes has achieved spatial resolution of 10 nm, temperature precision of 50 mK, sensitivity to heat flows of 10 pW, and the capability for thermal analysis of sub-femtogram samples.

The Use of Memories in Understanding Interactive Science and Technology Exhibits

ERIC Educational Resources Information Center

Afonso, Ana S.; Gilbert, John K.

2006-01-01

Framed by a "personal constructivist" perspective, this study analyses visitors' use of spontaneous memories in understanding different types of interactive exhibits, the nature and sources of the retrieved memories, and the way that visitors relate an exhibit analogically to memories of previous exhibits. One hundred and thirteen…

Progress in the Long $${\\rm Nb}_{3}{\\rm Sn}$$ Quadrupole R&D by LARP

DOE PAGES

Ambrosio, G.; Andreev, N.; Anerella, M.; ...

2011-11-14

After the successful test of the first long Nb 3Sn quadrupole (LQS01) the US LHC Accelerator Research Program (LARP, a collaboration of BNL, FNAL, LBNL and SLAC) is assessing training memory, reproducibility, and other accelerator quality features of long Nb 3Sn quadrupole magnets. LQS01b (a reassembly of LQS01 with more uniform and higher pre-stress) was subjected to a full thermal cycle and reached the previous plateau of 222 T/m at 4.5 K in two quenches. A new set of four coils, made of the same type of conductor used in LQS01 (RRP 54/61 by Oxford Superconducting Technology), was assembled inmore » the LQS01 structure and tested at 4.5 K and lower temperatures. The new magnet (LQS02) reached the target gradient (200 T/m) only at 2.6 K and lower temperatures, at intermediate ramp rates. The preliminary test analysis, here reported, showed a higher instability in the limiting coil than in the other coils of LQS01 and LQS02.« less

Evolving Requirements for Magnetic Tape Data Storage Systems

NASA Technical Reports Server (NTRS)

Gniewek, John J.

1996-01-01

Magnetic tape data storage systems have evolved in an environment where the major applications have been back-up/restore, disaster recovery, and long term archive. Coincident with the rapidly improving price-performance of disk storage systems, the prime requirements for tape storage systems have remained: (1) low cost per MB, (2) a data rate balanced to the remaining system components. Little emphasis was given to configuring the technology components to optimize retrieval of the stored data. Emerging new applications such as network attached high speed memory (HSM), and digital libraries, place additional emphasis and requirements on the retrieval of the stored data. It is therefore desirable to consider the system to be defined both by STorage And Retrieval System (STARS) requirements. It is possible to provide comparative performance analysis of different STARS by incorporating parameters related to (1) device characteristics, and (2) application characteristics in combination with queuing theory analysis. Results of these analyses are presented here in the form of response time as a function of system configuration for two different types of devices and for a variety of applications.

Origin of steps in magnetization loops of martensitic Ni-Mn-Ga films on MgO(001)

NASA Astrophysics Data System (ADS)

Laptev, Aleksej; Lebecki, Kristof; Welker, Gesa; Luo, Yuansu; Samwer, Konrad; Fonin, Mikhail

2016-09-01

We study the temperature dependent magnetization properties of (010)-oriented Ni-Mn-Ga epitaxial films on MgO(001) substrates. In the martensitic phase, we observe pronounced abrupt slope changes in the magnetization loops for all studied samples. Our experimental findings are discussed in conjunction with the micromagnetic simulations, revealing that the characteristic magnetization behavior is governed solely by the magnetization switching within the specific martensitic variant pattern, and no reorientation of twin variants is involved in the process. Our study emphasizes the important role of the magnetostatic interactions in the magnetization behavior of magnetic shape memory alloy thin films.

Breaking through barriers: using technology to address executive function weaknesses and improve student achievement.

PubMed

Schwartz, David M

2014-01-01

Assistive technologies provide significant capabilities for improving student achievement. Improved accessibility, cost, and diversity of applications make integration of technology a powerful tool to compensate for executive function weaknesses and deficits and their impact on student performance, learning, and achievement. These tools can be used to compensate for decreased working memory, poor time management, poor planning and organization, poor initiation, and decreased memory. Assistive technology provides mechanisms to assist students with diverse strengths and weaknesses in mastering core curricular concepts.

Science and Technology Text Mining: Text Mining of the Journal Cortex

DTIC Science & Technology

2004-01-01

Amnesia Retrograde Amnesia GENERAL Semantic Memory Episodic Memory Working Memory TEST Serial Position Curve...in Cortex can be reasonably divided into four categories (papers in each category in parenthesis): Semantic Memory (151); Handedness (145); Amnesia ... Semantic Memory (151) is divided into Verbal/ Numerical (76) and Visual/ Spatial (75). Amnesia (119) is divided into Amnesia Symptoms (50) and

On the research of time past: the hunt for the substrate of memory

PubMed Central

Queenan, Bridget N.; Ryan, Tomás J.; Gazzaniga, Michael; Gallistel, Charles R.

2017-01-01

The search for memory is one of the oldest quests in written human history. For at least two millennia, we have tried to understand how we learn and remember. We have gradually converged on the brain and looked inside it to find the basis of knowledge, the trace of memory. The search for memory has been conducted on multiple levels, from the organ to the cell to the synapse, and has been distributed across disciplines with less chronological or intellectual overlap than one might hope. Frequently, the study of the mind and its memories has been severely restricted by technological or philosophical limitations. However, in the last few years, certain technologies have emerged, offering new routes of inquiry into the basis of memory. The 2016 Kavli Futures Symposium was devoted to the past and future of memory studies. At the workshop, participants evaluated the logic and data underlying the existing and emerging theories of memory. In this paper, written in the spirit of the workshop, we briefly review the history of the hunt for memory, summarizing some of the key debates at each level of spatial resolution. We then discuss the exciting new opportunities to unravel the mystery of memory. PMID:28548457

Second International Symposium on Magnetic Suspension Technology, part 1

NASA Technical Reports Server (NTRS)

Groom, Nelson J. (Editor); Britcher, Colin P. (Editor)

1994-01-01

In order to examine the state of technology of all areas of magnetic suspension and to review related recent developments in sensors and controls approaches, superconducting magnet technology, and design/implementation practices, the Second International Symposium on Magnetic Suspension Technology was held. The symposium included 18 technical sessions in which 44 papers were presented. The technical sessions covered the areas of bearings, bearing modeling, controls, vibration isolation, micromachines, superconductivity, wind tunnel magnetic suspension systems, magnetically levitated trains (MAGLEV), rotating machinery and energy storage, and applications. A list of attendees appears at the end of the document.

A Compute Capable SSD Architecture for Next-Generation Non-volatile Memories

DOE Office of Scientific and Technical Information (OSTI.GOV)

De, Arup

2014-01-01

Existing storage technologies (e.g., disks and ash) are failing to cope with the processor and main memory speed and are limiting the overall perfor- mance of many large scale I/O or data-intensive applications. Emerging fast byte-addressable non-volatile memory (NVM) technologies, such as phase-change memory (PCM), spin-transfer torque memory (STTM) and memristor are very promising and are approaching DRAM-like performance with lower power con- sumption and higher density as process technology scales. These new memories are narrowing down the performance gap between the storage and the main mem- ory and are putting forward challenging problems on existing SSD architecture, I/O interfacemore » (e.g, SATA, PCIe) and software. This dissertation addresses those challenges and presents a novel SSD architecture called XSSD. XSSD o oads com- putation in storage to exploit fast NVMs and reduce the redundant data tra c across the I/O bus. XSSD o ers a exible RPC-based programming framework that developers can use for application development on SSD without dealing with the complication of the underlying architecture and communication management. We have built a prototype of XSSD on the BEE3 FPGA prototyping system. We implement various data-intensive applications and achieve speedup and energy ef- ciency of 1.5-8.9 and 1.7-10.27 respectively. This dissertation also compares XSSD with previous work on intelligent storage and intelligent memory. The existing ecosystem and these new enabling technologies make this system more viable than earlier ones.« less

International Symposium on Magnetic Suspension Technology, Part 2

NASA Technical Reports Server (NTRS)

Groom, Nelson J. (Editor); Britcher, Colin P. (Editor)

1992-01-01

In order to examine the state of technology of all areas of magnetic suspension and to review related recent developments in sensors and controls approaches, superconducting magnet technology, and design/implementation practices, a symposium was held. The proceedings are presented. The sessions covered the areas of bearings, sensors and controls, microgravity and vibration isolation, superconductivity, manufacturing applications, wind tunnel magnetic suspension systems, magnetically levitated trains (MAGLEV), space applications, and large gap magnetic suspension systems.

Uniform rotating field network structure to efficiently package a magnetic bubble domain memory

NASA Technical Reports Server (NTRS)

Murray, Glen W. (Inventor); Chen, Thomas T. (Inventor); Wolfshagen, Ronald G. (Inventor); Ypma, John E. (Inventor)

1978-01-01

A unique and compact open coil rotating magnetic field network structure to efficiently package an array of bubble domain devices is disclosed. The field network has a configuration which effectively enables selected bubble domain devices from the array to be driven in a vertical magnetic field and in an independent and uniform horizontal rotating magnetic field. The field network is suitably adapted to minimize undesirable inductance effects, improve capabilities of heat dissipation, and facilitate repair or replacement of a bubble device.

Reduced prefrontal activation during working and long-term memory tasks and impaired patient-reported cognition among cancer survivors postchemotherapy compared with healthy controls.

PubMed

Wang, Lei; Apple, Alexandra C; Schroeder, Matthew P; Ryals, Anthony J; Voss, Joel L; Gitelman, Darren; Sweet, Jerry J; Butt, Zeeshan A; Cella, David; Wagner, Lynne I

2016-01-15

Patients who receive adjuvant chemotherapy have reported cognitive impairments that may last for years after the completion of treatment. Working memory-related and long-term memory-related changes in this population are not well understood. The objective of this study was to demonstrate that cancer-related cognitive impairments are associated with the under recruitment of brain regions involved in working and recognition memory compared with controls. Oncology patients (n = 15) who were receiving adjuvant chemotherapy and had evidence of cognitive impairment according to neuropsychological testing and self-report and a group of age-matched, education group-matched, cognitively normal control participants (n = 14) underwent functional magnetic resonance imaging. During functional magnetic resonance imaging, participants performed a nonverbal n-back working memory task and a visual recognition task. On the working memory task, when 1-back and 2-back data were averaged and contrasted with 0-back data, significantly reduced activation was observed in the right dorsolateral prefrontal cortex for oncology patients versus controls. On the recognition task, oncology patients displayed decreased activity of the left-middle hippocampus compared with controls. Neuroimaging results were not associated with patient-reported cognition. Decreased recruitment of brain regions associated with the encoding of working memory and recognition memory was observed in the oncology patients compared with the control group. These results suggest that there is a reduction in neural functioning postchemotherapy and corroborate patient-reported cognitive difficulties after cancer treatment, although a direct association was not observed. Cancer 2016;122:258-268. © 2015 American Cancer Society. © 2015 American Cancer Society.

Episodic Memory Retrieval Functionally Relies on Very Rapid Reactivation of Sensory Information.

PubMed

Waldhauser, Gerd T; Braun, Verena; Hanslmayr, Simon

2016-01-06

Episodic memory retrieval is assumed to rely on the rapid reactivation of sensory information that was present during encoding, a process termed "ecphory." We investigated the functional relevance of this scarcely understood process in two experiments in human participants. We presented stimuli to the left or right of fixation at encoding, followed by an episodic memory test with centrally presented retrieval cues. This allowed us to track the reactivation of lateralized sensory memory traces during retrieval. Successful episodic retrieval led to a very early (∼100-200 ms) reactivation of lateralized alpha/beta (10-25 Hz) electroencephalographic (EEG) power decreases in the visual cortex contralateral to the visual field at encoding. Applying rhythmic transcranial magnetic stimulation to interfere with early retrieval processing in the visual cortex led to decreased episodic memory performance specifically for items encoded in the visual field contralateral to the site of stimulation. These results demonstrate, for the first time, that episodic memory functionally relies on very rapid reactivation of sensory information. Remembering personal experiences requires a "mental time travel" to revisit sensory information perceived in the past. This process is typically described as a controlled, relatively slow process. However, by using electroencephalography to measure neural activity with a high time resolution, we show that such episodic retrieval entails a very rapid reactivation of sensory brain areas. Using transcranial magnetic stimulation to alter brain function during retrieval revealed that this early sensory reactivation is causally relevant for conscious remembering. These results give first neural evidence for a functional, preconscious component of episodic remembering. This provides new insight into the nature of human memory and may help in the understanding of psychiatric conditions that involve the automatic intrusion of unwanted memories. Copyright © 2016 the authors 0270-6474/16/360251-10$15.00/0.

Incidental Memory Encoding Assessed with Signal Detection Theory and Functional Magnetic Resonance Imaging (fMRI).

PubMed

Clemens, Benjamin; Regenbogen, Christina; Koch, Kathrin; Backes, Volker; Romanczuk-Seiferth, Nina; Pauly, Katharina; Shah, N Jon; Schneider, Frank; Habel, Ute; Kellermann, Thilo

2015-01-01

In functional magnetic resonance imaging (fMRI) studies that apply a "subsequent memory" approach, successful encoding is indicated by increased fMRI activity during the encoding phase for hits vs. misses, in areas underlying memory encoding such as the hippocampal formation. Signal-detection theory (SDT) can be used to analyze memory-related fMRI activity as a function of the participant's memory trace strength (d(')). The goal of the present study was to use SDT to examine the relationship between fMRI activity during incidental encoding and participants' recognition performance. To implement a new approach, post-experimental group assignment into High- or Low Performers (HP or LP) was based on 29 healthy participants' recognition performance, assessed with SDT. The analyses focused on the interaction between the factors group (HP vs. LP) and recognition performance (hits vs. misses). A whole-brain analysis revealed increased activation for HP vs. LP during incidental encoding for remembered vs. forgotten items (hits > misses) in the insula/temporo-parietal junction (TPJ) and the fusiform gyrus (FFG). Parameter estimates in these regions exhibited a significant positive correlation with d('). As these brain regions are highly relevant for salience detection (insula), stimulus-driven attention (TPJ), and content-specific processing of mnemonic stimuli (FFG), we suggest that HPs' elevated memory performance was associated with enhanced attentional and content-specific sensory processing during the encoding phase. We provide first correlative evidence that encoding-related activity in content-specific sensory areas and content-independent attention and salience detection areas influences memory performance in a task with incidental encoding of facial stimuli. Based on our findings, we discuss whether the aforementioned group differences in brain activity during incidental encoding might constitute the basis of general differences in memory performance between HP and LP.

A room-temperature non-volatile CNT-based molecular memory cell

NASA Astrophysics Data System (ADS)

Ye, Senbin; Jing, Qingshen; Han, Ray P. S.

2013-04-01

Recent experiments with a carbon nanotube (CNT) system confirmed that the innertube can oscillate back-and-forth even under a room-temperature excitation. This demonstration of relative motion suggests that it is now feasible to build a CNT-based molecular memory cell (MC), and the key to bring the concept to reality is the precision control of the moving tube for sustained and reliable read/write (RW) operations. Here, we show that by using a 2-section outertube design, we are able to suitably recalibrate the system energetics and obtain the designed performance characteristics of a MC. Further, the resulting energy modification enables the MC to operate as a non-volatile memory element at room temperatures. Our paper explores a fundamental understanding of a MC and its response at the molecular level to roadmap a novel approach in memory technologies that can be harnessed to overcome the miniaturization limit and memory volatility in memory technologies.

Functional Magnetic Resonance Imaging of Working Memory and Executive Dysfunction in Systemic Lupus Erythematosus and Antiphospholipid Antibody-Positive Patients.

PubMed

Kozora, E; Uluğ, A M; Erkan, D; Vo, A; Filley, C M; Ramon, G; Burleson, A; Zimmerman, R; Lockshin, M D

2016-11-01

Standardized cognitive tests and functional magnetic resonance imaging (fMRI) studies of systemic lupus erythematosus (SLE) patients demonstrate deficits in working memory and executive function. These neurobehavioral abnormalities are not well studied in antiphospholipid syndrome, which may occur independently of or together with SLE. This study compares an fMRI paradigm involving motor skills, working memory, and executive function in SLE patients without antiphospholipid antibody (aPL) (the SLE group), aPL-positive non-SLE patients (the aPL-positive group), and controls. Brain MRI, fMRI, and standardized cognitive assessment results were obtained from 20 SLE, 20 aPL-positive, and 10 healthy female subjects with no history of neuropsychiatric abnormality. Analysis of fMRI data showed no differences in performance across groups on bilateral motor tasks. When analysis of variance was used, significant group differences were found in 2 executive function tasks (word generation and word rhyming) and in a working memory task (N-Back). Patients positive for aPL demonstrated higher activation in bilateral frontal, temporal, and parietal cortices compared to controls during working memory and executive function tasks. SLE patients also demonstrated bilateral frontal and temporal activation during working memory and executive function tasks. Compared to controls, both aPL-positive and SLE patients had elevated cortical activation, primarily in the frontal lobes, during tasks involving working memory and executive function. These findings are consistent with cortical overactivation as a compensatory mechanism for early white matter neuropathology in these disorders. © 2016, American College of Rheumatology.

The impact of early visual cortex transcranial magnetic stimulation on visual working memory precision and guess rate.

PubMed

Rademaker, Rosanne L; van de Ven, Vincent G; Tong, Frank; Sack, Alexander T

2017-01-01

Neuroimaging studies have demonstrated that activity patterns in early visual areas predict stimulus properties actively maintained in visual working memory. Yet, the mechanisms by which such information is represented remain largely unknown. In this study, observers remembered the orientations of 4 briefly presented gratings, one in each quadrant of the visual field. A 10Hz Transcranial Magnetic Stimulation (TMS) triplet was applied directly at stimulus offset, or midway through a 2-second delay, targeting early visual cortex corresponding retinotopically to a sample item in the lower hemifield. Memory for one of the four gratings was probed at random, and participants reported this orientation via method of adjustment. Recall errors were smaller when the visual field location targeted by TMS overlapped with that of the cued memory item, compared to errors for stimuli probed diagonally to TMS. This implied topographic storage of orientation information, and a memory-enhancing effect at the targeted location. Furthermore, early pulses impaired performance at all four locations, compared to late pulses. Next, response errors were fit empirically using a mixture model to characterize memory precision and guess rates. Memory was more precise for items proximal to the pulse location, irrespective of pulse timing. Guesses were more probable with early TMS pulses, regardless of stimulus location. Thus, while TMS administered at the offset of the stimulus array might disrupt early-phase consolidation in a non-topographic manner, TMS also boosts the precise representation of an item at its targeted retinotopic location, possibly by increasing attentional resources or by injecting a beneficial amount of noise.

The impact of early visual cortex transcranial magnetic stimulation on visual working memory precision and guess rate

PubMed Central

van de Ven, Vincent G.; Tong, Frank; Sack, Alexander T.

2017-01-01

Neuroimaging studies have demonstrated that activity patterns in early visual areas predict stimulus properties actively maintained in visual working memory. Yet, the mechanisms by which such information is represented remain largely unknown. In this study, observers remembered the orientations of 4 briefly presented gratings, one in each quadrant of the visual field. A 10Hz Transcranial Magnetic Stimulation (TMS) triplet was applied directly at stimulus offset, or midway through a 2-second delay, targeting early visual cortex corresponding retinotopically to a sample item in the lower hemifield. Memory for one of the four gratings was probed at random, and participants reported this orientation via method of adjustment. Recall errors were smaller when the visual field location targeted by TMS overlapped with that of the cued memory item, compared to errors for stimuli probed diagonally to TMS. This implied topographic storage of orientation information, and a memory-enhancing effect at the targeted location. Furthermore, early pulses impaired performance at all four locations, compared to late pulses. Next, response errors were fit empirically using a mixture model to characterize memory precision and guess rates. Memory was more precise for items proximal to the pulse location, irrespective of pulse timing. Guesses were more probable with early TMS pulses, regardless of stimulus location. Thus, while TMS administered at the offset of the stimulus array might disrupt early-phase consolidation in a non-topographic manner, TMS also boosts the precise representation of an item at its targeted retinotopic location, possibly by increasing attentional resources or by injecting a beneficial amount of noise. PMID:28384347

Transcranial magnetic stimulation reveals the content of visual short-term memory in the visual cortex.

PubMed

Silvanto, Juha; Cattaneo, Zaira

2010-05-01

Cortical areas involved in sensory analysis are also believed to be involved in short-term storage of that sensory information. Here we investigated whether transcranial magnetic stimulation (TMS) can reveal the content of visual short-term memory (VSTM) by bringing this information to visual awareness. Subjects were presented with two random-dot displays (moving either to the left or to the right) and they were required to maintain one of these in VSTM. In Experiment 1, TMS was applied over the motion-selective area V5/MT+ above phosphene threshold during the maintenance phase. The reported phosphene contained motion features of the memory item, when the phosphene spatially overlapped with memory item. Specifically, phosphene motion was enhanced when the memory item moved in the same direction as the subjects' V5/MT+ baseline phosphene, whereas it was reduced when the motion direction of the memory item was incongruent with that of the baseline V5/MT+ phosphene. There was no effect on phosphene reports when there was no spatial overlap between the phosphene and the memory item. In Experiment 2, VSTM maintenance did not influence the appearance of phosphenes induced from the lateral occipital region. These interactions between VSTM maintenance and phosphene appearance demonstrate that activity in V5/MT+ reflects the motion qualities of items maintained in VSTM. Furthermore, these results also demonstrate that information in VSTM can modulate the pattern of visual activation reaching awareness, providing evidence for the view that overlapping neuronal populations are involved in conscious visual perception and VSTM. 2010. Published by Elsevier Inc.

Opportunities for nonvolatile memory systems in extreme-scale high-performance computing

DOE PAGES

Vetter, Jeffrey S.; Mittal, Sparsh

2015-01-12

For extreme-scale high-performance computing systems, system-wide power consumption has been identified as one of the key constraints moving forward, where DRAM main memory systems account for about 30 to 50 percent of a node's overall power consumption. As the benefits of device scaling for DRAM memory slow, it will become increasingly difficult to keep memory capacities balanced with increasing computational rates offered by next-generation processors. However, several emerging memory technologies related to nonvolatile memory (NVM) devices are being investigated as an alternative for DRAM. Moving forward, NVM devices could offer solutions for HPC architectures. Researchers are investigating how to integratemore » these emerging technologies into future extreme-scale HPC systems and how to expose these capabilities in the software stack and applications. In addition, current results show several of these strategies could offer high-bandwidth I/O, larger main memory capacities, persistent data structures, and new approaches for application resilience and output postprocessing, such as transaction-based incremental checkpointing and in situ visualization, respectively.« less

Robust resistive memory devices using solution-processable metal-coordinated azo aromatics

NASA Astrophysics Data System (ADS)

Goswami, Sreetosh; Matula, Adam J.; Rath, Santi P.; Hedström, Svante; Saha, Surajit; Annamalai, Meenakshi; Sengupta, Debabrata; Patra, Abhijeet; Ghosh, Siddhartha; Jani, Hariom; Sarkar, Soumya; Motapothula, Mallikarjuna Rao; Nijhuis, Christian A.; Martin, Jens; Goswami, Sreebrata; Batista, Victor S.; Venkatesan, T.

2017-12-01

Non-volatile memories will play a decisive role in the next generation of digital technology. Flash memories are currently the key player in the field, yet they fail to meet the commercial demands of scalability and endurance. Resistive memory devices, and in particular memories based on low-cost, solution-processable and chemically tunable organic materials, are promising alternatives explored by the industry. However, to date, they have been lacking the performance and mechanistic understanding required for commercial translation. Here we report a resistive memory device based on a spin-coated active layer of a transition-metal complex, which shows high reproducibility (~350 devices), fast switching (<=30 ns), excellent endurance (~1012 cycles), stability (>106 s) and scalability (down to ~60 nm2). In situ Raman and ultraviolet-visible spectroscopy alongside spectroelectrochemistry and quantum chemical calculations demonstrate that the redox state of the ligands determines the switching states of the device whereas the counterions control the hysteresis. This insight may accelerate the technological deployment of organic resistive memories.

Cortical Activation Patterns during Long-Term Memory Retrieval of Visually or Haptically Encoded Objects and Locations

ERIC Educational Resources Information Center

Stock, Oliver; Roder, Brigitte; Burke, Michael; Bien, Siegfried; Rosler, Frank

2009-01-01

The present study used functional magnetic resonance imaging to delineate cortical networks that are activated when objects or spatial locations encoded either visually (visual encoding group, n = 10) or haptically (haptic encoding group, n = 10) had to be retrieved from long-term memory. Participants learned associations between auditorily…

Neural Correlates of Feigned Memory Impairment are Distinguishable from Answering Randomly and Answering Incorrectly: An fMRI and Behavioral Study

ERIC Educational Resources Information Center

Liang, Chun-Yu; Xu, Zhi-Yuan; Mei, Wei; Wang, Li-Li; Xue, Li; Lu, De Jian; Zhao, Hu

2012-01-01

Previous functional magnetic resonance imaging (fMRI) studies have identified activation in the prefrontal-parietal-sub-cortical circuit during feigned memory impairment when comparing with truthful telling. Here, we used fMRI to determine whether neural activity can differentiate between answering correctly, answering randomly, answering…

Differences in Processing of Taxonomic and Sequential Relations in Semantic Memory: An fMRI Investigation

ERIC Educational Resources Information Center

Kuchinke, Lars; van der Meer, Elke; Krueger, Frank

2009-01-01

Conceptual knowledge of our world is represented in semantic memory in terms of concepts and semantic relations between concepts. We used functional magnetic resonance imaging (fMRI) to examine the cortical regions underlying the processing of sequential and taxonomic relations. Participants were presented verbal cues and performed three tasks:…

Structural Dissociation of Attentional Control and Memory in Adults with and without Mild Traumatic Brain Injury

ERIC Educational Resources Information Center

Niogi, Sumit N.; Mukherjee, Pratik; Ghajar, Jamshid; Johnson, Carl E.; Kolster, Rachel; Lee, Hana; Suh, Minah; Zimmerman, Robert D.; Manley, Geoffrey T.; McCandliss, Bruce D.

2008-01-01

Memory and attentional control impairments are the two most common forms of dysfunction following mild traumatic brain injury (TBI) and lead to significant morbidity in patients, yet these functions are thought to be supported by different brain networks. This 3 T magnetic resonance diffusion tensor imaging (DTI) study investigates whether…

The Effect of Non-Visual Working Memory Load on Top-Down Modulation of Visual Processing

ERIC Educational Resources Information Center

Rissman, Jesse; Gazzaley, Adam; D'Esposito, Mark

2009-01-01

While a core function of the working memory (WM) system is the active maintenance of behaviorally relevant sensory representations, it is also critical that distracting stimuli are appropriately ignored. We used functional magnetic resonance imaging to examine the role of domain-general WM resources in the top-down attentional modulation of…

Correlation between Gray/White Matter Volume and Cognition in Healthy Elderly People

ERIC Educational Resources Information Center

Taki, Yasuyuki; Kinomura, Shigeo; Sato, Kazunori; Goto, Ryoi; Wu, Kai; Kawashima, Ryuta; Fukuda, Hiroshi

2011-01-01

This study applied volumetric analysis and voxel-based morphometry (VBM) of brain magnetic resonance (MR) images to assess whether correlations exist between global and regional gray/white matter volume and the cognitive functions of semantic memory and short-term memory, which are relatively well preserved with aging, using MR image data from 109…

Polylactide-based polyurethane shape memory nanocomposites (Fe3O4/PLAUs) with fast magnetic responsiveness

NASA Astrophysics Data System (ADS)

Gu, Shu-Ying; Jin, Sheng-Peng; Gao, Xie-Feng; Mu, Jian

2016-05-01

Polylactide-based polyurethane shape memory nanocomposites (Fe3O4/PLAUs) with fast magnetic responsiveness are presented. For the purpose of fast response and homogeneous dispersion of magnetic nanoparticles, oleic acid was used to improve the dispersibility of Fe3O4 nanoparticles in a polymer matrix. A homogeneous distribution of Fe3O4 nanoparticles in the polymer matrix was obtained for nanocomposites with low Fe3O4 loading content. A small agglomeration was observed for nanocomposites with 6 wt% and 9 wt% loading content, leading to a small decline in the mechanical properties. PLAU and its nanocomposites have glass transition around 52 °C, which can be used as the triggering temperature. PLAU and its nanocomposites have shape fixity ratios above 99%, shape recovery ratios above 82% for the first cycle and shape recovery ratios above 91% for the second cycle. PLAU and its nanocomposites also exhibit a fast water bath or magnetic responsiveness. The magnetic recovery time decreases with an increase in the loading content of Fe3O4 nanoparticles due to an improvement in heating performance for increased weight percentage of fillers. The nanocomposites have fast responses in an alternating magnetic field and have potential application in biomedical areas such as intravascular stent.

Modeling of Magnetoelastic Nanostructures with a Fully-coupled Mechanical-Micromagnetic Model and Its Applications

NASA Astrophysics Data System (ADS)

Liang, Cheng-Yen

Micromagnetic simulations of magnetoelastic nanostructures traditionally rely on either the Stoner-Wohlfarth model or the Landau-Lifshitz-Gilbert (LLG) model assuming uniform strain (and/or assuming uniform magnetization). While the uniform strain assumption is reasonable when modeling magnetoelastic thin films, this constant strain approach becomes increasingly inaccurate for smaller in-plane nanoscale structures. In this dissertation, a fully-coupled finite element micromagnetic method is developed. The method deals with the micromagnetics, elastodynamics, and piezoelectric effects. The dynamics of magnetization, non-uniform strain distribution, and electric fields are iteratively solved. This more sophisticated modeling technique is critical for guiding the design process of the nanoscale strain-mediated multiferroic elements such as those needed in multiferroic systems. In this dissertation, we will study magnetic property changes (e.g., hysteresis, coercive field, and spin states) due to strain effects in nanostructures. in addition, a multiferroic memory device is studied. The electric-field-driven magnetization switching by applying voltage on patterned electrodes simulation in a nickel memory device is shown in this work. The deterministic control law for the magnetization switching in a nanoring with electric field applied to the patterned electrodes is investigated. Using the patterned electrodes, we show that strain-induced anisotropy is able to be controlled, which changes the magnetization deterministically in a nano-ring.

Development and Technology Transfer of the Syncro Blue Tube (Gabriel) Magnetically Guided Feeding Tube

DTIC Science & Technology

2017-06-01

other documentation. TITLE: Development and Technology Transfer of the Syncro Blue Tube (Gabriel) Magnetically Guided Feeding Tube REPORT DOCUMENTATION...TITLE AND SUBTITLE Development and Technology Transfer of the Syncro Blue Tube (Gabriel) Magnetically Guided Feeding Tube 5a. CONTRACT NUMBER W81XWH-09-2...Technical Abstract: Further Development and Technology Transfer of the Syncro BLUETUBE™ (Gabriel) Magnetically Guided Feeding Tube. New Primary

Camera memory study for large space telescope. [charge coupled devices

NASA Technical Reports Server (NTRS)

Hoffman, C. P.; Brewer, J. E.; Brager, E. A.; Farnsworth, D. L.

1975-01-01

Specifications were developed for a memory system to be used as the storage media for camera detectors on the large space telescope (LST) satellite. Detectors with limited internal storage time such as intensities charge coupled devices and silicon intensified targets are implied. The general characteristics are reported of different approaches to the memory system with comparisons made within the guidelines set forth for the LST application. Priority ordering of comparisons is on the basis of cost, reliability, power, and physical characteristics. Specific rationales are provided for the rejection of unsuitable memory technologies. A recommended technology was selected and used to establish specifications for a breadboard memory. Procurement scheduling is provided for delivery of system breadboards in 1976, prototypes in 1978, and space qualified units in 1980.

Annealing effects on the structural and magnetic properties of off-stoichiometric Fe-Mn-Ga ferromagnetic shape memory alloys

DOE PAGES

Chen, Yan; Bei, Hongbin; Dela Cruz, Clarina R; ...

2016-05-07

Annealing plays an important role in modifying structures and properties of ferromagnetic shape memory alloys (FSMAs). The annealing effect on the structures and magnetic properties of off-stoichiometric Fe 45Mn 26Ga 29 FSMA has been investigated at different elevated temperatures. Rietveld refinements of neutron diffraction patterns display that the formation of the γ phase in Fe 45Mn 26Ga 29 annealed at 1073 K increases the martensitic transformation temperature and reduces the thermal hysteresis in comparison to the homogenized sample. The phase segregation of a Fe-rich cubic phase and a Ga-rich cubic phase occurs at the annealing temperature of 773 K. Themore » atomic occupancies of the alloys are determined thanks to the neutron's capability of differentiating transition metals. The annealing effects at different temperatures introduce a different magnetic characteristic that is associated with distinctive structural changes in the crystal.« less

Coherent all-optical control of ultracold atoms arrays in permanent magnetic traps.

PubMed

Abdelrahman, Ahmed; Mukai, Tetsuya; Häffner, Hartmut; Byrnes, Tim

2014-02-10

We propose a hybrid architecture for quantum information processing based on magnetically trapped ultracold atoms coupled via optical fields. The ultracold atoms, which can be either Bose-Einstein condensates or ensembles, are trapped in permanent magnetic traps and are placed in microcavities, connected by silica based waveguides on an atom chip structure. At each trapping center, the ultracold atoms form spin coherent states, serving as a quantum memory. An all-optical scheme is used to initialize, measure and perform a universal set of quantum gates on the single and two spin-coherent states where entanglement can be generated addressably between spatially separated trapped ultracold atoms. This allows for universal quantum operations on the spin coherent state quantum memories. We give detailed derivations of the composite cavity system mediated by a silica waveguide as well as the control scheme. Estimates for the necessary experimental conditions for a working hybrid device are given.

Spin-transfer torque in multiferroic tunnel junctions with composite dielectric/ferroelectric barriers

NASA Astrophysics Data System (ADS)

Velev, Julian P.; Merodio, Pablo; Pollack, Cesar; Kalitsov, Alan; Chshiev, Mairbek; Kioussis, Nicholas

2017-12-01

Using model calculations, we demonstrate a very high level of control of the spin-transfer torque (STT) by electric field in multiferroic tunnel junctions with composite dielectric/ferroelectric barriers. We find that, for particular device parameters, toggling the polarization direction can switch the voltage-induced part of STT between a finite value and a value close to zero, i.e. quench and release the torque. Additionally, we demonstrate that under certain conditions the zero-voltage STT, i.e. the interlayer exchange coupling, can switch sign with polarization reversal, which is equivalent to reversing the magnetic ground state of the tunnel junction. This bias- and polarization-tunability of the STT could be exploited to engineer novel functionalities such as softening/hardening of the bit or increasing the signal-to-noise ratio in magnetic sensors, which can have important implications for magnetic random access memories or for combined memory and logic devices.

Magnetic and mechanical properties of Ni-Mn-Ga/Fe-Ga ferromagnetic shape memory composite

NASA Astrophysics Data System (ADS)

Tan, Chang-Long; Zhang, Kun; Tian, Xiao-Hua; Cai, Wei

2015-05-01

A ferromagnetic shape memory composite of Ni-Mn-Ga and Fe-Ga was fabricated by using spark plasma sintering method. The magnetic and mechanical properties of the composite were investigated. Compared to the Ni-Mn-Ga alloy, the threshold field for magnetic-field-induced strain in the composite is clearly reduced owing to the assistance of internal stress generated from Fe-Ga. Meanwhile, the ductility has been significantly improved in the composite. A fracture strain of 26% and a compressive strength of 1600 MPa were achieved. Projects supported by the National Natural Science Foundation of China (Grant Nos. 51271065 and 51301054), the Program for New Century Excellent Talents in Heilongjiang Provincial Education Department, China (Grant No. 1253-NCET-009), the Youth Academic Backbone in Heilongjiang Provincial Education Department, China (Grant No. 1251G022), the Projects of Heilongjiang, China, and China Postdoctoral Science Foundation.

Internet Technology in Magnetic Resonance: A Common Gateway Interface Program for the World-Wide Web NMR Spectrometer

NASA Astrophysics Data System (ADS)

Buszko, Marian L.; Buszko, Dominik; Wang, Daniel C.

1998-04-01

A custom-written Common Gateway Interface (CGI) program for remote control of an NMR spectrometer using a World Wide Web browser has been described. The program, running on a UNIX workstation, uses multiple processes to handle concurrent tasks of interacting with the user and with the spectrometer. The program's parent process communicates with the browser and sends out commands to the spectrometer; the child process is mainly responsible for data acquisition. Communication between the processes is via the shared memory mechanism. The WWW pages that have been developed for the system make use of the frames feature of web browsers. The CGI program provides an intuitive user interface to the NMR spectrometer, making, in effect, a complex system an easy-to-use Web appliance.

The role of electronic checklists - case study on MRI-safety.

PubMed

Landmark, Andreas; Selnes, May-Britt; Larsen, Elisabeth; Svensli, Astrid; Solum, Linda; Brattheim, Berit

2012-01-01

Checklists can be used to improve and standardize safety critical processes and their communication. The introduction of potentially harmful medical technology and equipment has created additional requirements for the safe delivery of health care. We have studied the implementation of an electronic checklist to ensure the safety of patients scheduled for Magnetic Resonance Imaging examinations. Through a combination of observations and semi-structured interviews we investigated how health care workers in a Norwegian University hospital dealt with variations in checklist compliance, missing and lack of information. The checklist provided different functionality for the different users, ranging from a memory/attention support to a standardized form of communication on safety matters. However, the rigidity afforded by the electronic implementation, showed some serious drawbacks over the prior, simpler, paper-based versions.

The ethics of molecular memory modification.

PubMed

Hui, Katrina; Fisher, Carl E

2015-07-01

Novel molecular interventions have recently shown the potential to erase, enhance and alter specific long-term memories. Unique features of this form of memory modification call for a close examination of its possible applications. While there have been discussions of the ethics of memory modification in the literature, molecular memory modification (MMM) can provide special insights. Previously raised ethical concerns regarding memory enhancement, such as safety issues, the 'duty to remember', selfhood and personal identity, require re-evaluation in light of MMM. As a technology that exploits the brain's updating processes, MMM helps correct the common misconception that memory is a static entity by demonstrating how memory is plastic and subject to revision even in the absence of external manipulation. Furthermore, while putatively safer than other speculative technologies because of its high specificity, MMM raises notable safety issues, including potential insidious effects on the agent's emotions and personal identity. Nonetheless, MMM possesses characteristics of a more permissible form of modification, not only because it is theoretically safer, but because its unique mechanism of action requires a heightened level of cooperation from the agent. Discussions of memory modification must consider the specific mechanisms of action, which can alter the weight and relevance of various ethical concerns. MMM also highlights the need for conceptual accuracy regarding the term 'enhancement'; this umbrella term will have to be differentiated as new technologies are applied to a widening array of purposes. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://group.bmj.com/group/rights-licensing/permissions.

Nonvolatile random access memory

NASA Technical Reports Server (NTRS)

Wu, Jiin-Chuan (Inventor); Stadler, Henry L. (Inventor); Katti, Romney R. (Inventor)

1994-01-01

A nonvolatile magnetic random access memory can be achieved by an array of magnet-Hall effect (M-H) elements. The storage function is realized with a rectangular thin-film ferromagnetic material having an in-plane, uniaxial anisotropy and inplane bipolar remanent magnetization states. The thin-film magnetic element is magnetized by a local applied field, whose direction is used to form either a 0 or 1 state. The element remains in the 0 or 1 state until a switching field is applied to change its state. The stored information is detcted by a Hall-effect sensor which senses the fringing field from the magnetic storage element. The circuit design for addressing each cell includes transistor switches for providing a current of selected polarity to store a binary digit through a separate conductor overlying the magnetic element of the cell. To read out a stored binary digit, transistor switches are employed to provide a current through a row of Hall-effect sensors connected in series and enabling a differential voltage amplifier connected to all Hall-effect sensors of a column in series. To avoid read-out voltage errors due to shunt currents through resistive loads of the Hall-effect sensors of other cells in the same column, at least one transistor switch is provided between every pair of adjacent cells in every row which are not turned on except in the row of the selected cell.

Component deficits of visual neglect: "Magnetic" attraction of attention vs. impaired spatial working memory.

PubMed

Toba, Monica N; Rabuffetti, Marco; Duret, Christophe; Pradat-Diehl, Pascale; Gainotti, Guido; Bartolomeo, Paolo

2018-01-31

Visual neglect is a disabling consequence of right hemisphere damage, whereby patients fail to detect left-sided objects. Its precise mechanisms are debated, but there is some consensus that distinct component deficits may variously associate and interact in different patients. Here we used a touch-screen based procedure to study two putative component deficits of neglect, rightward "magnetic" attraction of attention and impaired spatial working memory, in a group of 47 right brain-damaged patients, of whom 33 had signs of left neglect. Patients performed a visual search task on three distinct conditions, whereby touched targets could (1) be tagged, (2) disappear or (3) show no change. Magnetic attraction of attention was defined as more left neglect on the tag condition than on the disappear condition, where right-sided disappeared targets could not capture patients' attention. Impaired spatial working memory should instead produce more neglect on the no change condition, where no external cue indicated that a target had already been explored, than on the tag condition. Using a specifically developed analysis algorithm, we identified significant differences of performance between the critical conditions. Neglect patients as a group performed better on the disappear condition than on the no change condition and also better in the tag condition comparing with the no change condition. No difference was found between the tag condition and the disappear condition. Some of our neglect patients had dissociated patterns of performance, with predominant magnetic attraction or impaired spatial working memory. Anatomical results issued from both grey matter analysis and fiber tracking were consistent with the typical patterns of fronto-parietal and occipito-frontal disconnection in neglect, but did not identify lesional patterns specifically associated with one or another deficit, thus suggesting the possible co-localization of attentional and working memory processes in fronto-parietal networks. These findings give support to the hypothesis of the co-occurrence of distinct cognitive deficits in visual neglect and stress the necessity of multi-component models of visuospatial disorders. Copyright © 2017 Elsevier Ltd. All rights reserved.