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Sample records for magnetoresistive heat switch

  1. A Magnetoresistive Heat Switch for the Continuous ADR

    NASA Technical Reports Server (NTRS)

    Canavan, E. R.; Dipirro, M. J.; Jackson, M.; Panek, J.; Shirron, P. J.; Tuttle, J. G.; Krebs, C. (Technical Monitor)

    2001-01-01

    In compensated elemental metals at low temperature, a several Tesla field can suppress electronic heat conduction so thoroughly that heat is effectively carried by phonons alone. In approximately one mm diameter single crystal samples with impurity concentrations low enough that electron conduction is limited by surface scattering, the ratio of zerofield to high-field thermal conductivity can exceed ten thousand. We have used this phenomenon to build a compact, solid-state heat switch with no moving parts and no enclosed fluids. The time scale for switching states is limited by time scale for charging the magnet that supplies the controlling field. Our design and fabrication techniques overcome the difficulties associated with manufacturing and assembling parts from single crystal tungsten. A clear disadvantage of the magnetoresistive switch is the mass and complexity of the magnet system for the controlling field. We have discovered a technique of minimizing this mass and complexity, applicable to the continuous adiabatic demagnetization refrigerator.

  2. Performance of a fast response miniature Adiabatic Demagnetisation Refrigerator using a single crystal tungsten magnetoresistive heat switch

    NASA Astrophysics Data System (ADS)

    Bartlett, J.; Hardy, G.; Hepburn, I. D.

    2015-12-01

    The performance of a fast thermal response miniature Adiabatic Demagnetisation Refrigerator (ADR) is presented. The miniature ADR is comprised of a fast thermal response Chromium Potassium Alum (CPA) salt pill, two superconducting magnets and unconventionally, a single crystal tungsten magnetoresistive (MR) heat switch. The development of this ADR is a result of the ongoing development of a continuously operating millikelvin cryocooler (mKCC), which will use only magnetoresistive heat switches. The design and performance of the MR heat switch developed for the mKCC and used in the miniature ADR is presented in this paper; the heat switch has a measured Residual Resistivity Ratio of 32,000 ± 3000 and an estimated switching ratio (on thermal conductivity divided by the off thermal conductivity) of 15,200 at 3.6 K and 38,800 at 0.2 K when using a 3 T magnetic field. The performance of the miniature ADR operating from a 3.6 K bath is presented, demonstrating that a complete cycle (magnetisation, cooling to the bath and demagnetisation) can be accomplished in 82 s. A magnet current step test, conducted when the ADR is cold and fully demagnetised, has shown the thermal response of the ADR to be sub-second. The measured hold times of the ADR with just parasitic heat load are given, ranging from 3 min at 0.2 K with 13.14 μW of parasitics, to 924 min at 3 K with 4.55 μW of parasitics. The cooling power has been measured for operating temperatures in the range 0.25-3 K by applying an additional heat load to the ADR via a heater, in order to reduce the hold time to 3 min (i.e. approximately double the recycle time); the maximum cooling power of the miniature ADR (in addition to parasitic load) when operating at 250 mK is 20 μW, which increases to 45 μW at 300 mK and continues to increase linearly to nearly 1.1 mW at 3 K. To conclude, the predicted performance of a tandem continuous ADR utilising two of the miniature ADRs is presented.

  3. Heat Switches for ADRs

    NASA Technical Reports Server (NTRS)

    DiPirro, M. J.; Shirron, P. J.

    2014-01-01

    Heat switches are key elements in the cyclic operation of Adiabatic Demagnetization Refrigerators (ADRs). Several of the types of heat switches that have been used for ADRs are described in this paper. Key elements in selection and design of these switches include not only ON/OFF switching ratio, but also method of actuation, size, weight, and structural soundness. Some of the trade-off are detailed in this paper.

  4. Large magnetoresistance in oxide based ferromagnet/superconductor spin switches.

    SciTech Connect

    Pena, V.; Nemes, N.; Visani, C.; Garcia-Barriocanal, J.; Bruno, F.; Arias, D.; Sefrioui, Z.; Leon, C.; te Velthuis, S. G. E.; Hoffmann, A.; Garcia-Hernandez, M.; Santamaria, J.; Materials Science Division; Univ. Complutense de Madrid; Inst. de Ciencia de Materiales de Madrid

    2006-01-01

    We report large magnetoresistance (in excess of 1000%) in ferromagnet / superconductor / ferromagnet structures made of La{sub 0.7}Ca{sub 0.3}MnO{sub 3} and YBa{sub 2}Cu{sub 3}O{sub 7} in the current in plane (CIP) geometry. This magnetoresistance has many of the ingredients of the giant magnetoresistance of metallic superlattices: it is independent on the angle between current and magnetic field, depends on the relative orientation of the magnetization in the ferromagnetic layers, and takes very large values. The origin is enhanced scattering at the F/S interface in the anti parallel configuration of the magnetizations. Furthermore, we examine the dependence of the magnetoresistance effect on the thickness of the superconducting layer, and show that the magnetoresistance dies out for thickness in excess of 30 nm, setting a length scale for the diffusion of spin polarized quasiparticles.

  5. Heat-transfer thermal switch

    NASA Technical Reports Server (NTRS)

    Friedell, M. V.; Anderson, A. J.

    1974-01-01

    Thermal switch maintains temperature of planetary lander, within definite range, by transferring heat. Switch produces relatively large stroke and force, uses minimum electrical power, is lightweight, is vapor pressure actuated, and withstands sterilization temperatures without damage.

  6. All-optical switching of magnetoresistive devices using telecom-band femtosecond laser

    SciTech Connect

    He, Li; Chen, Jun-Yang; Wang, Jian-Ping E-mail: moli@umn.edu; Li, Mo E-mail: moli@umn.edu

    2015-09-07

    Ultrafast all-optical switching of the magnetization of various magnetic systems is an intriguing phenomenon that can have tremendous impact on information storage and processing. Here, we demonstrate all-optical switching of GdFeCo alloy films using a telecom-band femtosecond fiber laser. We further fabricate Hall cross devices and electrically readout all-optical switching by measuring anomalous Hall voltage changes. The use of a telecom laser and the demonstrated all-optical switching of magnetoresistive devices represent the first step toward integration of opto-magnetic devices with mainstream photonic devices to enable novel optical and spintronic functionalities.

  7. Gas adsorption/absorption heat switch, phase 1

    NASA Technical Reports Server (NTRS)

    Chan, C. K.

    1987-01-01

    The service life and/or reliability of far-infrared sensors on surveillance satellites is presently limited by the cryocooler. The life and/or reliability, however, can be extended by using redundant cryocoolers. To reduce parasitic heat leak, each stage of the inactive redundant cryocooler must be thermally isolated from the optical system, while each stage of the active cryocooler must be thermally connected to the system. The thermal break or the thermal contact can be controlled by heat switches. Among different physical mechanisms for heat switching, mechanically activated heat switches tend to have low reliability and, furthermore, require a large contact force. Magnetoresistive heat switches are, except at very low temperatures, of very low efficiency. Heat switches operated by the heat pipe principle usually require a long response time. A sealed gas gap heat switch operated by an adsorption pump has no mechanical motion and should provide the reliability and long lifetime required in long-term space missions. Another potential application of a heat switch is the thermal isolation of the optical plane during decontamination.

  8. A Piezoelectric Cryogenic Heat Switch

    NASA Technical Reports Server (NTRS)

    Jahromi, Amir E.; Sullivan, Dan F.

    2014-01-01

    We have measured the thermal conductance of a mechanical heat switch actuated by a piezoelectric positioner, the PZHS (PieZo electric Heat Switch), at cryogenic temperatures. The thermal conductance of the PZHS was measured between 4 K and 10 K, and on/off conductance ratios greater than 100 were achieved when the positioner applied its maximum force of 8 N. We discuss the advantages of using this system in cryogenic applications, and estimate the ultimate performance of an optimized PZHS.

  9. Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

    NASA Astrophysics Data System (ADS)

    Göckeritz, Robert; Homonnay, Nico; Müller, Alexander; Fuhrmann, Bodo; Schmidt, Georg

    2016-04-01

    Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La0.7Sr0.3MnO3/Alq3/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even changing sign when voltage pulses are applied. This combination of phenomena is typically observed in multiferroic tunnel junctions where it is attributed to magnetoelectric coupling between a ferromagnet and a ferroelectric material. Modeling indicates that here the switching originates from a modification of the La0.7Sr0.3MnO3 surface. This modification influences the tunneling of charge carriers and thus both the electrical resistance and the tunneling magnetoresistance which occurs at pinholes in the organic layer.

  10. Realization of resistive switching and magnetoresistance in ZnO/ZnO-Co composite materials

    NASA Astrophysics Data System (ADS)

    Li, Xiaoli; Jia, Juan; Li, Yanchun; Bai, Yuhao; Li, Jie; Shi, Yana; Wang, Lanfang; Xu, Xiaohong

    2016-09-01

    Combining resistive switching and magnetoresistance in a system exhibits great potential for application in multibit nonvolatile data storage. It is in significance and difficulty to seek a material with resistances that can be stably switched at different resistance states modulated by an electrical field and a magnetic field. In this paper, we propose a novel electrode/ZnO/ZnO-Co/electrode device in which the storage layer combines a nanostructured ZnO-Co layer and a ZnO layer. The device exhibits bipolar resistive switching characteristics, which can be explained by the accumulation of oxygen vacancies due to the migration of oxygen ions by external electrical stimuli and the contribution of Co particles in the ZnO-Co layer. Moreover, the magnetoresistance effect at room temperature can be observed in the device at high and low resistance states. Therefore, through electrical and magnetic control, four resistance states are achieved in this system, presenting a new possibility towards enhancing data densities by many folds.

  11. Realization of resistive switching and magnetoresistance in ZnO/ZnO-Co composite materials

    PubMed Central

    Li, Xiaoli; Jia, Juan; Li, Yanchun; Bai, Yuhao; Li, Jie; Shi, Yana; Wang, Lanfang; Xu, Xiaohong

    2016-01-01

    Combining resistive switching and magnetoresistance in a system exhibits great potential for application in multibit nonvolatile data storage. It is in significance and difficulty to seek a material with resistances that can be stably switched at different resistance states modulated by an electrical field and a magnetic field. In this paper, we propose a novel electrode/ZnO/ZnO-Co/electrode device in which the storage layer combines a nanostructured ZnO-Co layer and a ZnO layer. The device exhibits bipolar resistive switching characteristics, which can be explained by the accumulation of oxygen vacancies due to the migration of oxygen ions by external electrical stimuli and the contribution of Co particles in the ZnO-Co layer. Moreover, the magnetoresistance effect at room temperature can be observed in the device at high and low resistance states. Therefore, through electrical and magnetic control, four resistance states are achieved in this system, presenting a new possibility towards enhancing data densities by many folds. PMID:27585644

  12. Realization of resistive switching and magnetoresistance in ZnO/ZnO-Co composite materials.

    PubMed

    Li, Xiaoli; Jia, Juan; Li, Yanchun; Bai, Yuhao; Li, Jie; Shi, Yana; Wang, Lanfang; Xu, Xiaohong

    2016-01-01

    Combining resistive switching and magnetoresistance in a system exhibits great potential for application in multibit nonvolatile data storage. It is in significance and difficulty to seek a material with resistances that can be stably switched at different resistance states modulated by an electrical field and a magnetic field. In this paper, we propose a novel electrode/ZnO/ZnO-Co/electrode device in which the storage layer combines a nanostructured ZnO-Co layer and a ZnO layer. The device exhibits bipolar resistive switching characteristics, which can be explained by the accumulation of oxygen vacancies due to the migration of oxygen ions by external electrical stimuli and the contribution of Co particles in the ZnO-Co layer. Moreover, the magnetoresistance effect at room temperature can be observed in the device at high and low resistance states. Therefore, through electrical and magnetic control, four resistance states are achieved in this system, presenting a new possibility towards enhancing data densities by many folds. PMID:27585644

  13. Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control

    PubMed Central

    Liu, Houfang; Wang, Ran; Guo, Peng; Wen, Zhenchao; Feng, Jiafeng; Wei, Hongxiang; Han, Xiufeng; Ji, Yang; Zhang, Shufeng

    2015-01-01

    Magnetization switching between parallel and antiparallel alignments of two magnetic layers in magnetic tunnel junctions (MTJs) is conventionally controlled either by an external magnetic field or by an electric current. Here, we report that the manipulation of magnetization switching and tunnel magnetoresistance (TMR) in perpendicularly magnetized CoFeB/MgO/CoFeB MTJs can be achieved by both temperature and voltage. At a certain range of temperature, coercivity crossover between top and bottom magnetic layers is observed in which the TMR ratio of the MTJs is almost unmeasurable. Furthermore, the temperature range can be tuned reversibly by an electric voltage. Magnetization switching driven by the voltage reveals an unconventional phenomenon such that the voltage driven coercivity changes with temperature are quite different for top and bottom CoFeB layers. A model based on thermally-assisted domain nucleation and propagation is developed to explain the frequency and temperature dependence of coercivity. The present results of controlling the magnetization switching by temperature and voltage may provide an alternative route for novel applications of MTJs based spintronic devices. PMID:26658213

  14. Large magnetization and frustration switching of magnetoresistance in the double-perovskite ferrimagnet Mn2FeReO6.

    PubMed

    Arévalo-López, Angel M; McNally, Graham M; Attfield, J Paul

    2015-10-01

    Ferrimagnetic A2 BB'O6 double perovskites, such as Sr2 FeMoO6 , are important spin-polarized conductors. Introducing transition metals at the A-sites offers new possibilities to increase magnetization and tune magnetoresistance. Herein we report a ferrimagnetic double perovskite, Mn2 FeReO6 , synthesized at high pressure which has a high Curie temperature of 520 K and magnetizations of up to 5.0 μB which greatly exceed those for other double perovskite ferrimagnets. A novel switching transition is discovered at 75 K where magnetoresistance changes from conventional negative tunneling behavior to large positive values, up to 265 % at 7 T and 20 K. Neutron diffraction shows that the switch is driven by magnetic frustration from antiferromagnetic Mn(2+) spin ordering which cants Fe(3+) and Re(5+) spins and reduces spin-polarization. Ferrimagnetic double perovskites based on A-site Mn(2+) thus offer new opportunities to enhance magnetization and control magnetoresistance in spintronic materials.

  15. Customizable Gas-Gap Heat Switch

    NASA Astrophysics Data System (ADS)

    Martins, D.; Catarino, I.; Schroder, U.; Ricardo, J.; Patricio, R.; Duband, L.; Bonfait, G.

    2010-04-01

    The so-called gas gap heat switch, in which the pressure is managed by a coupled small cryopump having no moving parts, is known to be a very reliable and simple heat switch. Mechanical design improvements can lead to optimized ON or OFF characteristics of a gas-gap heat switch. Their ON conductance characteristics are mainly determined by the gas properties and the gap geometry. However, their operational temperature range is limited by the gas-sorbent pair adsorption characteristics. Traditionally the gas chosen is helium, since it is the best conductive one below 100 K, and the sorbent used is activated charcoal. Such a switch is limited to be used at cold end temperatures below ˜15 K. In order to obtain a customizable device working at the whole range below 100 K, a gas gap heat switch was studied and extensively characterized. Hydrogen, Neon and Nitrogen were used as conducting gas, under different sorption conditions. A thermal model was built in order to determine the ON and OFF conductances over each entire temperature range. This work presents the operational temperature windows established for each gas, depending on the amount of gas used. The experimental results and those predicted by the model are in quite good agreement. Such windows allow the tuning of a gas gap heat switch to be used under particular circumstances. The adsorption properties of various types of activated charcoals and their consequences on the operational temperature windows are being studied in order to allow a still larger customization of such heat switches.

  16. Integrated Heat Switch/Oxide Sorption Compressor

    NASA Technical Reports Server (NTRS)

    Bard, Steven

    1989-01-01

    Thermally-driven, nonmechanical compressor uses container filled with compressed praseodymium cerium oxide powder (PrCeOx) to provide high-pressure flow of oxygen gas for driving closed-cycle Joule-Thomson-expansion refrigeration unit. Integrated heat switch/oxide sorption compressor has no moving parts except check valves, which control flow of oxygen gas between compressor and closed-cycle Joule-Thomson refrigeration system. Oxygen expelled from sorbent at high pressure by evacuating heat-switch gap and turning on heater.

  17. Magnetoresistance effect of heat generation in a single-molecular spin-valve

    NASA Astrophysics Data System (ADS)

    Jiang, Feng; Yan, Yonghong; Wang, Shikuan; Yan, Yijing

    2016-02-01

    Based on non-equilibrium Green's functions' theory and small polaron transformation's technology, we study the heat generation by current through a single-molecular spin-valve. Numerical results indicate that the variation of spin polarization degree can change heat generation effectively, the spin-valve effect happens not only in electrical current but also in heat generation when Coulomb repulsion in quantum dot is smaller than phonon frequency and interestingly, when Coulomb repulsion is larger than phonon frequency, the inverse spin-valve effect appears by sweeping gate voltage and is enlarged with bias increasing. The inverse spin-valve effect will induce the unique heat magnetoresistance effect, which can be modulated from heat-resistance to heat-gain by gate voltage easily.

  18. Improved heat switch for gas sorption compressor

    NASA Technical Reports Server (NTRS)

    Chan, C. K.

    1985-01-01

    Thermal conductivities of the charcoal bed and the copper matrix for the gas adsorption compressor were measured by the concentric-cylinder method. The presence of the copper matrix in the charcoal bed enhanced the bed conductance by at least an order of magnitude. Thermal capacities of the adsorbent cell and the heat leaks to two compressor designs were measured by the transient method. The new gas adsorption compressor had a heat switch that could transfer eight times more heat than the previous one. The cycle time for the new prototype compressor is also improved by a factor of eight to within the minute range.

  19. Cathode heating mechanisms in pseudospark plasma switches

    NASA Astrophysics Data System (ADS)

    Sommerer, Timothy J.; Pak, Hoyoung; Kushner, Mark J.

    1992-10-01

    Pseudosparks, and the back-lighted thyratron (BLT) in particular, are finding increasing application as pulse power switches. An attractive feature of BLTs is that high current densities (≥ tens of kA cm-2) can be sustained from metal cathodes without auxiliary heating. The source of this current is believed to be electric-field-enhanced thermionic emission resulting from heating of the cathode by ion bombardment during commutation which ultimately melts the surface of the cathode. It is proposed that a photon-driven ionization mechanism in the interelectrode gap of the BLT is responsible for initiating the observed patterns of cathode surface melting and electron emission. A 21/2-dimensional computer model is presented that incorporates a photo-induced ionization mechanism to spread the plasma into the interelectrode gap. It predicts a melting of the cathode in a pattern similar to that which is experimentally observed, and predicts a rate of field-enhanced thermionic electron emission that is sufficient to explain the high BLT conduction current density. In the absence of these mechanisms, the model does not predict the observed large-area melting of the face of the cathode. The cathode heating rate during the BLT switching phase is maximum for operating parameters that are very close to the limit for which the switch will close (that is, the smallest possible pressure-electrode spacing product and smallest possible electrode holes).

  20. Passive gas-gap heat switch for adiabatic demagnetization refrigerator

    NASA Technical Reports Server (NTRS)

    Shirron, Peter J. (Inventor); Di Pirro, Michael J. (Inventor)

    2005-01-01

    A passive gas-gap heat switch for use with a multi-stage continuous adiabatic demagnetization refrigerator (ADR). The passive gas-gap heat switch turns on automatically when the temperature of either side of the switch rises above a threshold value and turns off when the temperature on either side of the switch falls below this threshold value. One of the heat switches in this multistage process must be conductive in the 0.25? K to 0.3? K range. All of the heat switches must be capable of switching off in a short period of time (1-2 minutes), and when off to have a very low thermal conductance. This arrangement allows cyclic cooling cycles to be used without the need for separate heat switch controls.

  1. Electrocaloric devices based on thini-film heat switches

    SciTech Connect

    Epstein, Richard I; Malloy, Kevin J

    2009-01-01

    We describe a new approach to refrigeration and electrical generation that exploits the attractive properties of thin films of electrocaloric materials. Layers of electrocaloric material coupled with thin-film heat switches can work as either refrigerators or electrical generators, depending on the phasing of the applied voltages and heat switching. With heat switches based on thin layers of liquid crystals, the efficiency of these thin-film heat engines can be at least as high as that of current thermoelectric devices. Advanced heat switches would enable thin-film heat engines to outperform conventional vaporcompression devices.

  2. Calculation of energy-barrier lowering by incoherent switching in spin-transfer torque magnetoresistive random-access memory

    SciTech Connect

    Munira, Kamaram; Visscher, P. B.

    2015-05-07

    To make a useful spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device, it is necessary to be able to calculate switching rates, which determine the error rates of the device. In a single-macrospin model, one can use a Fokker-Planck equation to obtain a low-current thermally activated rate ∝exp(−E{sub eff}/k{sub B}T). Here, the effective energy barrier E{sub eff} scales with the single-macrospin energy barrier KV, where K is the effective anisotropy energy density and V the volume. A long-standing paradox in this field is that the actual energy barrier appears to be much smaller than this. It has been suggested that incoherent motions may lower the barrier, but this has proved difficult to quantify. In the present paper, we show that the coherent precession has a magnetostatic instability, which allows quantitative estimation of the energy barrier and may resolve the paradox.

  3. Magnetoelectric assisted 180° magnetization switching for electric field addressable writing in magnetoresistive random-access memory.

    PubMed

    Wang, Zhiguang; Zhang, Yue; Wang, Yaojin; Li, Yanxi; Luo, Haosu; Li, Jiefang; Viehland, Dwight

    2014-08-26

    Magnetization-based memories, e.g., hard drive and magnetoresistive random-access memory (MRAM), use bistable magnetic domains in patterned nanomagnets for information recording. Electric field (E) tunable magnetic anisotropy can lower the energy barrier between two distinct magnetic states, promising reduced power consumption and increased recording density. However, integration of magnetoelectric heterostructure into MRAM is a highly challenging task owing to the particular architecture requirements of each component. Here, we show an epitaxial growth of self-assembled CoFe2O4 nanostripes with bistable in-plane magnetizations on Pb(Mg,Nb)O3-PbTiO3 (PMN-PT) substrates, where the magnetic switching can be triggered by E-induced elastic strain effect. An unprecedented magnetic coercive field change of up to 600 Oe was observed with increasing E. A near 180° magnetization rotation can be activated by E in the vicinity of the magnetic coercive field. These findings might help to solve the 1/2-selection problem in traditional MRAM by providing reduced magnetic coercive field in E field selected memory cells. PMID:25093903

  4. Bistable Magnetoresistance Switching in Exchange-Coupled CoFe2O4-Fe3O4 Binary Nanocrystal Superlattices by Self-Assembly and Thermal Annealing

    SciTech Connect

    Chen, J; Ye, XC; Oh, SJ; Kikkawa, JM; Kagan, CR; Murray, CB

    2013-02-01

    Self-assembly of multicomponent nanocrystal superlattices provides a modular approach to the design of metamaterials by choosing constituent nanocrystal building blocks with desired physical properties and engineering the interparticle coupling. In this work, we report the self-assembly of binary nanocrystal superlattices composed of magnetically hard CoFe2O4 nanocrystals and magnetically soft Fe3O4 nanocrystals. Both NaZn13- and MgZn2-type CoFe2O4-Fe3O4 binary nanocrystal superlattices have been formed by the liquid-air interfacial assembly approach. Exchange coupling is achieved in both types of binary superlattices after thermal annealing under vacuum at 400 degrees C. The exchange-coupled CoFe2O4-Fe3O4 binary nanocrystal superlattices show single-phase magnetization switching behavior and magnetoresistance switching behavior below 200 K. The NaZn13-type CoFe2O4-Fe3O4 binary nanocrystal superlattices annealed at 500 degrees C even exhibit bistable magnetoresistance switching behavior at room temperature constituting a simple nonvolatile memory function.

  5. Electro-mechanical heat switch for cryogenic applications

    DOEpatents

    van den Berg, Marcel L.; Batteux, Jan D.; Labov, Simon E.

    2003-01-01

    A heat switch includes two symmetric jaws. Each jaw is comprised of a link connected at a translatable joint to a flexible arm. Each arm rotates about a fixed pivot, and has an articulated end including a thermal contact pad connected to a heat sink. The links are joined together at a translatable main joint. To close the heat switch, a closing solenoid is actuated and forces the main joint to an over-center position. This movement rotates the arms about their pivots, respectively, forces each of them into a stressed configuration, and forces the thermal contact pads towards each other and into compressive contact with a cold finger. The closing solenoid is then deactivated. The heat switch remains closed due to a restoring force generated by the stressed configuration of each arm, until actuation of an opening solenoid returns the main joint to its starting open-switch position.

  6. Design and application of gas-gap heat switches

    NASA Technical Reports Server (NTRS)

    Chan, C. K.; Ross, R. G., Jr.

    1990-01-01

    Gas-gap heat switches can serve as an effective means of thermally disconnecting a standby cryocooler when the primary (operating) cooler is connected and vice versa. The final phase of the development and test of a cryogenic heat switch designed for loads ranging from 2 watts at 8 K, to 100 watts at 80 K are described. Achieved heat-switch on/off conductance ratio ranged from 11,000 at 8 K to 2200 at 80 K. A particularly challenging element of heat-switch design is achieving satisfactory operation when large temperatures differentials exist across the switch. A special series of tests and analyses was conducted and used in this Phase-2 activity to evaluate the developed switches for temperature differentials ranging up to 200 K. Problems encountered at the maximum levels are described and analyzed, and means of avoiding the problems in the future are presented. A comprehensive summary of the overall heat-switch design methodology is also presented with special emphasis on lessons learned over the course of the 4-year development effort.

  7. Note: Cryogenic heat switch with stepper motor actuator

    SciTech Connect

    Melcher, B. S. Timbie, P. T.

    2015-12-15

    A mechanical cryogenic heat switch has been developed using a commercially available stepper motor and control electronics. The motor requires 4 leads, each carrying a maximum, pulsed current of 0.5 A. With slight modifications of the stepper motor, the switch functions reliably in vacuum at temperatures between 300 K and 4 K. The switch generates a clamping force of 262 N at room temperature. At 4 K it achieves an “on state” thermal conductance of 5.04 mW/K and no conductance in the “off state.” The switch is optimized for cycling an adiabatic demagnetization refrigerator.

  8. Self-actuating heat switches for redundant refrigeration systems

    NASA Technical Reports Server (NTRS)

    Chan, Chung K. (Inventor)

    1988-01-01

    A dual refrigeration system for cooling a sink device is described, which automatically thermally couples the cold refrigerator to the sink device while thermally isolating the warm refrigerator from the sink device. The system includes two gas gap heat switches that each thermally couples one of the refrigerators to the sink device, and a pair of sorption pumps that are coupled through tubes to the heat switches. When the first refrigerator is operated and therefore cold, the first pump which is thermally coupled to it is also cooled and adsorbs gas to withdraw it from the second heat switch, to thereby thermally isolate the sink device from the warm second refrigerator. With the second refrigerator being warm, the second pump is also warm and desorbs gas, so the gas lies in the first switch, to close that switch and therefore thermally couple the cold first refrigerator to the sink device. Thus, the heat switches are automatically switched according to the temperature of the corresponding refrigerator.

  9. Cryogenic flat-panel gas-gap heat switch

    NASA Astrophysics Data System (ADS)

    Vanapalli, S.; Keijzer, R.; Buitelaar, P.; ter Brake, H. J. M.

    2016-09-01

    A compact additive manufactured flat-panel gas-gap heat switch operating at cryogenic temperature is reported in this paper. A guarded-hot-plate apparatus has been developed to measure the thermal conductance of the heat switch with the heat sink temperature in the range of 100-180 K. The apparatus is cooled by a two-stage GM cooler and the temperature is controlled with a heater and a braided copper wire connection. A thermal guard is mounted on the hot side of the device to confine the heat flow axially through the sample. A gas handling system allows testing the device with different gas pressures in the heat switch. Experiments are performed at various heat sink temperatures, by varying gas pressure in the gas-gap and with helium, hydrogen and nitrogen gas. The measured off-conductance with a heat sink temperature of 115 K and the hot plate at 120 K is 0.134 W/K, the on-conductance with helium and hydrogen gases at the same temperatures is 4.80 W/K and 4.71 W/K, respectively. This results in an on/off conductance ratio of 37 ± 7 and 35 ± 6 for helium and hydrogen respectively. The experimental results matches fairly well with the predicted heat conductance at cryogenic temperatures.

  10. Heat switches providing low-activation power and quick-switching time for use in cryogenic multi-stage refrigerators

    NASA Astrophysics Data System (ADS)

    Kimball, Mark Oliver; Shirron, P.

    2012-06-01

    An adiabatic demagnetization refrigerator (ADR) is a solid-state cooler capable of achieving sub-Kelvin temperatures. It neither requires moving parts nor a density gradient in a working fluid making it ideal for use in space-based instruments. The flow of energy through the cooler is controlled by heat switches that allow heat transfer when on and isolate portions of the cooler when off. One type of switch uses helium gas as the switching medium. In the off state the gas is adsorbed in a getter thus breaking the thermal path through the switch. To activate the switch, the getter is heated to release helium into the switch body allowing it to complete the thermal path. A getter that has a small heat capacity and low thermal conductance to the body of the switch requires low-activation power. The cooler benefits from this in two ways: shorter recycle times and higher efficiency.We describe such a design here.

  11. Electric switch of magnetoresistance in the Pb(Zr0.2Ti0.8)O3/(La0.67Ca0.33)MnO3 heterostructure film

    NASA Astrophysics Data System (ADS)

    Chen, Bo; Li, Yong-Chao; Pan, Dan-Feng; Zhou, Hao; Xu, Guo-Min; Wan, Jian-Guo

    2016-07-01

    In this work, the Pb(Zr0.2Ti0.8)O3/(La0.67Ca0.33)MnO3 heterostructure film is deposited on the Pt/Ti/SiO2/Si wafer. The dominant transport is the inelastic hopping conduction. Due to the interaction between ferroelectric domain and magnetic polaron, film still exhibits weak ferromagnetism above the Curie temperature. Under lower bias voltage, the non-zero sequential magnetoresistance occurs on the magnetic granular junction. As soon as bias voltage exceeds the coercive voltage, the ferroelectric domain is aligned, consequently the magnetoresistance tends to vanish. Such electric switch of magnetoresistance is potential for the electric-write magnetic-read storage device.

  12. Joule heating-induced coexisted spin Seebeck effect and spin Hall magnetoresistance in the platinum/Y{sub 3}Fe{sub 5}O{sub 12} structure

    SciTech Connect

    Wang, W. X.; Wang, S. H.; Zou, L. K.; Cai, J. W.; Sun, J. R. E-mail: sun-zg@whut.edu.cn; Sun, Z. G.

    2014-11-03

    Spin Seebeck effect (SSE) and spin Hall magnetoresistance (SMR) are observed simultaneously in the Pt/Y{sub 3}Fe{sub 5}O{sub 12} hybrid structure when thermal gradient is produced by Joule heating. According to their dependences on applied current, these two effects can be separated. Their dependence on heating power and magnetic field is systematically studied. With the increase of heating power, the SSE enhances linearly, whereas the SMR decreases slowly. The origin of the spin currents is further analyzed. The heating power dependences of the spin currents associated with the SSE and the SMR are found to be different.

  13. Studies of current-perpendicular-to-plane magnetoresistance (CPP-MR) and current-induced magnetization switching (CIMS)

    NASA Astrophysics Data System (ADS)

    Kurt, Huseyin

    2005-08-01

    We present two CPP-MR studies of spin-valves based upon ferromagnetic/nonmagnetic/ferromagnetic (F/N/F) trilayers. We measure the spin-diffusion lengths of N = Pd, Pt, and Au at 4.2K, and both the specific resistances (sample area A times resistance R) and spin-memory-loss of N/Cu interfaces. Pd, Pt and Au are of special device interest because they give perpendicular anisotropy when sandwiching very thin Co layers. Comparing our spin-memory-loss data at Pd/Cu and Pt/Cu interfaces with older data for Nb/Cu and W/Cu gives insight into the importance of spin-orbit coupling in producing such loss. We reproduce and extend prior studies by Eid of 'magnetic activity' at the interface of Co and N-metals (or combinations of N-metals), when the other side of the N-metal contacts a superconductor (S). Our data suggest that magnetic activity may require strong spin-flipping at the N/S interface. We present five studies of a new phenomenon, CIMS, in F1/N/F2 trilayers, with F1 a thick 'polarizing' layer and F2 a thin 'switching' layer. In all prior studies of CIMS, positive current caused the magnetization of F2 to switch from parallel (P) to anti-parallel (AP) to that of F1- 'normal' switching. By judicious addition of impurities to F-metals, we are able to controllably produce both 'normal' and 'inverse' switching- where positive current switches the magnetization of F2 from AP to P to that of F1. In the samples studied, whether the switching is normal or inverse is set by the 'net polarization' produced by F1 and is independent of the properties of F2. As scattering in the bulk of F1 and F2 is essential to producing our results, these results cannot be described by ballistic models, which allow scattering only at interfaces. Most CIMS experiments use Cu as the N-layer due to its low resistivity and long spin-diffusion length. We show that Ag and Au have low enough resistivities and long enough spin-diffusion lengths to be useful alternatives to Cu for some devices. While

  14. Ultrafast heating-induced magnetization switching in ferrimagnets

    NASA Astrophysics Data System (ADS)

    Gridnev, V. N.

    2016-11-01

    We study theoretically the light-induced magnetization switching in a binary ferrimagnet of the type {{A}p} {{B}1-p} , randomly occupied by two different species of magnetic ions. The localized spins are coupled with spins of itinerant electrons via s-d exchange interaction. Model parameters are chosen so that to achieve similarity between magnetic characteristics of the model and those of ferrimagnetic rare-earth-transition metal GdFeCo alloys. The switching is triggered by heating of the itinerant electrons by a laser pulse. The spin dynamics is governed by the cooling of itinerant electrons, exchange scattering, induced by the s-d exchange interaction and spin-lattice relaxation of the itinerant spins with a characteristic time {τs} . The dynamics of the localized and itinerant spins is described by coupled rate equations. The main conclusion of this study is that the switching occurs only in a certain temperature range depending on {τs} . For long {τs} the switching occurs only below the magnetisation compensation temperature T K. For physically reasonable values of {τs} this temperature range extends from 0 K to {{T}f} ≤ft({τs}\\right) , where {{T}f} ≤ft({τs}\\right) is slightly higher than the compensation temperature T K. With further decrease of {τs} this temperature range shifts to temperatures higher than T K.

  15. Exchange coupling and magnetoresistance in CoFe/NiCu/CoFe spin valves near the Curie point of the spacer

    NASA Astrophysics Data System (ADS)

    Andersson, S.; Korenivski, V.

    2010-05-01

    Thermal control of exchange coupling between two strongly ferromagnetic layers through a weakly ferromagnetic Ni-Cu spacer and the associated magnetoresistance is investigated. The spacer, having a Curie point slightly above room temperature, can be cycled between its paramagnetic and ferromagnetic states by varying the temperature externally or using joule heating. It is shown that the giant magnetoresistance vanishes due to a strong reduction in the mean free path in the spacer at above ˜30% Ni concentration—before the onset of ferromagnetism. Finally, a device is proposed which combines thermally controlled exchange coupling and large magnetoresistance by separating the switching and the readout elements.

  16. Quantifying the heat switching capability of a thermionic diode

    SciTech Connect

    Snyder, A.M.; Verrill, D.A.

    1995-12-31

    The Integrated Solar Upper Stage (ISUS) Advanced Technology Demonstrator (ATD) program, recently initiated by the US Air Force Phillips Laboratory (USAF PL), will demonstrate the feasibility of a combined solar power and propulsion upper stage. The solar bimodal design approach will use thermal energy storage to reduce engine mass and concentrator area. However, in order to store enough energy over an orbit period there must be minimal heat lost with a system that is designed to remove heat for energy conversion. A unique feature of thermionics is their ability to reduce heat flow by reducing or eliminating the electron cooling. However, demonstration and quantification of this capability is needed. This paper presents the results to date of the Receiver Diode Integration Test, one of two critical experiments of the ISUS ATD program being performed by the Idaho National Engineering Laboratory (ML). Results of the demonstration testing of thermionic heat pipe modules (THPMS) to operate as heat switches in conjunction with the solar receiver cavity are presented as are the performance limits and operational constraints of a combined receiver/diode subsystem.

  17. Quantifying the heat switching capability of a thermionic diode

    SciTech Connect

    Snyder, A.M.; Verrill, D.A.

    1995-12-01

    The Integrated Solar Upper Stage (ISUS) Advanced Technology Demonstrator (ATD) program, recently initiated by the US Air Force Phillips Laboratory (USAF PL), will demonstrate the feasibility of a combined solar power and propulsion upper stage. The solar bimodal design approach will use thermal energy storage to reduce engine mass and concentrator area. However, in order to store enough energy over an orbit period there must be minimal heat lost with a system that is designed to remove heat for energy conversion. A unique feature of thermionics is their ability to reduce heat flow by reducing or eliminating the electron cooling. However, demonstration and quantification of this capability is needed. This paper presents the results to date of the Receiver Diode Integration Test, one of two critical experiments of the ISUS ATD program being performed by the Idaho National Engineering Laboratory (INEL). Results of the demonstration testing of thermionic heat pipe modules (THPMs) to operate as heat switches in conjunction with the solar receiver cavity are presented as are the performance limits and operational constraints of a combined receiver/diode subsystem.

  18. Design and Test of Passively Operated Heat Switches for 0.2 to 15 K

    NASA Technical Reports Server (NTRS)

    DiPirro, M. J.; Shirron, P. J.; Canavan, E. R.; Francis, J. J.; Tuttle, J. G.

    2003-01-01

    Heat switches have many uses in cryogenics, from regulating heat flow between refrigeration stages to thermally isolating components once they have cooled to low temperature. Among the techniques one can use for thermal switching, the gas-gap technique has the advantages of wide operating temperature range, high switching ratio, and no moving parts. The traditional gas-gap switch uses copper conductors separated by a small gap and an external getter. The switch is activated by heating and cooling the getter by moving gas into and out of the gap, turning the switch on and off. We have designed, built and tested heat switches that use an internal getter to passively turn off at temperatures between 0.2 and 15 K. The getter is thermally anchored to one side of the switch, and when that side of the switch cools through a transition region, gas adsorbs onto the getter and the switch turns off. The challenges are to make the transition region very narrow and tailorable to a wide range of applications, and to achieve high gas conductance when the switch is on. We have made switches using He-3, He-4, hydrogen, and neon gas, and have used charcoal and various metal substrates as getters. Switching ratios range from 1000 to over 10,000. Design and performance of these switches will be discussed in detail.

  19. Fabrication and local laser heating of freestanding Ni{sub 80}Fe{sub 20} bridges with Pt contacts displaying anisotropic magnetoresistance and anomalous Nernst effect

    SciTech Connect

    Brandl, F.; Grundler, D.

    2014-04-28

    In spin caloritronics, ferromagnetic samples subject to relatively large in-plane temperature gradients ∇T have turned out to be extremely interesting. We report on a preparation technique that allows us to create freely suspended permalloy/Pt hybrid structures where a scanning laser induces ∇T on the order of a few K/μm. We observe both the anisotropic magnetoresistance at room temperature and the magnetic field dependent anomalous Nernst effect under laser heating. The technique is promising for the realization of device concepts considered in spin caloritronics based on suspended ferromagnetic nanostructures with electrical contacts.

  20. Quick-Response Thermal Actuator for Use as a Heat Switch

    NASA Technical Reports Server (NTRS)

    Cepeda-Rizo, Juan

    2010-01-01

    This work improves the performance of a heat switch, or a thermal actuator, by delivering heat to the actuator in a more efficient manner. The method uses a heat pipe as the plunger or plug instead of just using a solid piece of metal. The heat pipe could be one tailored for fast transient thermal response.

  1. Giant magnetoresistance in silicene nanoribbons.

    PubMed

    Xu, Chengyong; Luo, Guangfu; Liu, Qihang; Zheng, Jiaxin; Zhang, Zhimeng; Nagase, Shigeru; Gao, Zhengxiang; Lu, Jing

    2012-05-21

    By performing first-principle quantum transport calculations, we predict a giant magnetoresistance in zigzag silicene nanoribbons (ZSiNRs) connecting two semi-infinite silicene electrodes through switch of the edge spin direction of ZSiNRs. Spin-filter efficiency of both the antiferromagnetic and ferromagnetic ZSiNRs is sign-changeable with the bias voltage. Therefore, potential application of silicene in spintronics devices is suggested.

  2. Local temperature redistribution and structural transition during joule-heating-driven conductance switching in VO2.

    PubMed

    Kumar, Suhas; Pickett, Matthew D; Strachan, John Paul; Gibson, Gary; Nishi, Yoshio; Williams, R Stanley

    2013-11-13

    Joule-heating induced conductance-switching is studied in VO2 , a Mott insulator. Complementary in situ techniques including optical characterization, blackbody microscopy, scanning transmission X-ray microscopy (STXM) and numerical simulations are used. Abrupt redistribution in local temperature is shown to occur upon conductance-switching along with a structural phase transition, at the same current.

  3. Development of Superconducting Magnetic Heat Switches for an Ideal Integrating Bolometer

    NASA Astrophysics Data System (ADS)

    Nagler, P. C.; Canavan, E.; De Alba, R.; Stevenson, T. R.

    2016-07-01

    We are developing an ideal integrating bolometer (IIB), a novel detector for far-infrared applications. An IIB consists of a dissipationless temperature sensor weakly coupled to a thermal bath through a heat switch. If the heat switch's thermal conductance in the "off" state is much smaller than its conductance in the "on" state, the thermometer temperature will depend linearly on integrated incident power, until the bolometer temperature is reset by changing the conductance to the "on" state. A key component of an IIB is the heat switch, the subject of this paper. We have fabricated and tested prototype IIB devices designed to demonstrate a superconducting magnetic heat switch on both solid substrates and membranes. In this work, we will present details on the design, fabrication, and experimental performance of our prototype IIB devices.

  4. MW-scale ICRF plasma heating using IGBT switches in a multi-pulse scheme

    NASA Astrophysics Data System (ADS)

    Be'ery, I.; Kogan, K.; Seemann, O.

    2015-06-01

    Solid-state silicon switches are cheap and reliable option for 1-10 MHz RF power sources, required for plasma ion cyclotron RF heating (ICRF). The large `on' resistance of MOSFET and similar devices limits their power delivery to a few tens of kW per switch. Low resistivity devices, such as IGBT, suffer from large `off' switching time, which limits their useful frequency range and increases the power dissipated in the switch. Here we demonstrate more than 0.8 MW circulated RF power at 2 MHz using only three high voltage IGBT switches. The circuit uses the fast `on' switching capability of the IGBTs to generate high-Q pulse train. This operation mode also simplifies the measurement of RF coupling between the antenna and the plasma.

  5. Compact flat-panel gas-gap heat switch operating at 295 K.

    PubMed

    Krielaart, M A R; Vermeer, C H; Vanapalli, S

    2015-11-01

    Heat switches are devices that can change from a thermally conducting (on-) state to an insulating (off-) state whenever the need arises. They enable adaptive thermal management strategies in which cooling rates are altered either spatially or temporally, leading to a substantial reduction in the energy and mass budget of a large range of systems. State-of-the-art heat switches are only rarely employed in thermal system architectures, since they are rather bulky and have a limited thermal performance (expressed as the heat transfer ratio between the on- and off-state heat conductance). Using selective laser melting additive manufacturing technology, also known as 3D printing, we developed a compact flat-panel gas-gap heat switch that offers superior thermal performance, is simpler and more economic to produce and assemble, contains no moving parts, and is more reliable because it lacks welded joints. The manufactured rectangular panel heat switch has frontal device dimensions of 10 cm by 10 cm, thickness of 3.2 mm and weighs just 121 g. An off heat conductance of 0.2 W/K and on-off heat conductance ratio of 38 is observed at 295 K. PMID:26628181

  6. Compact flat-panel gas-gap heat switch operating at 295 K

    NASA Astrophysics Data System (ADS)

    Krielaart, M. A. R.; Vermeer, C. H.; Vanapalli, S.

    2015-11-01

    Heat switches are devices that can change from a thermally conducting (on-) state to an insulating (off-) state whenever the need arises. They enable adaptive thermal management strategies in which cooling rates are altered either spatially or temporally, leading to a substantial reduction in the energy and mass budget of a large range of systems. State-of-the-art heat switches are only rarely employed in thermal system architectures, since they are rather bulky and have a limited thermal performance (expressed as the heat transfer ratio between the on- and off-state heat conductance). Using selective laser melting additive manufacturing technology, also known as 3D printing, we developed a compact flat-panel gas-gap heat switch that offers superior thermal performance, is simpler and more economic to produce and assemble, contains no moving parts, and is more reliable because it lacks welded joints. The manufactured rectangular panel heat switch has frontal device dimensions of 10 cm by 10 cm, thickness of 3.2 mm and weighs just 121 g. An off heat conductance of 0.2 W/K and on-off heat conductance ratio of 38 is observed at 295 K.

  7. Tunnel Magnetoresistance and Spin-Transfer-Torque Switching in Polycrystalline Co2FeAl Full-Heusler-Alloy Magnetic Tunnel Junctions on Amorphous Si /SiO2 Substrates

    NASA Astrophysics Data System (ADS)

    Wen, Zhenchao; Sukegawa, Hiroaki; Kasai, Shinya; Inomata, Koichiro; Mitani, Seiji

    2014-08-01

    We study polycrystalline B2-type Co2FeAl (CFA) full-Heusler-alloy-based magnetic tunnel junctions (MTJs) fabricated on a Si /SiO2 amorphous substrate. Polycrystalline CFA films with a (001) orientation, a high B2 ordering, and a flat surface are achieved by using a MgO buffer layer. A tunnel magnetoresistance ratio up to 175% is obtained for a MTJ with a CFA /MgO/CoFe structure on a 7.5-nm-thick MgO buffer. Spin-transfer-torque-induced magnetization switching is achieved in the MTJs with a 2-nm-thick polycrystalline CFA film as a switching layer. By using a thermal activation model, the intrinsic critical current density (Jc0) is determined to be 8.2×106 A /cm2, which is lower than 2.9×107 A /cm2, the value for epitaxial CFA MTJs [Appl. Phys. Lett. 100, 182403 (2012), 10.1063/1.4710521]. We find that the Gilbert damping constant (α) evaluated by using ferromagnetic resonance measurements for the polycrystalline CFA film is approximately 0.015 and is almost independent of the CFA thickness (2-18 nm). The low Jc0 for the polycrystalline MTJ is mainly attributed to the low α of the CFA layer compared with the value in the epitaxial one (approximately 0.04).

  8. Passive Gas-Gap Heat Switches for Use in Adiabatic Demagnetization Refrigerators

    NASA Technical Reports Server (NTRS)

    Shirron, P. J.; Canavan, E. R.; DiPirro, M. J.; Jackson, M.; Panek, J.; Tuttle, J. G.; Krebs, Carolyn (Technical Monitor)

    2001-01-01

    We have designed, built, and tested a gas gap heat switch that works passively, without the need for a separate, thermally activated getter. This switch uses He-3 condensed as a thin film on alternating plates of copper. The switch is thermally conductive at temperatures above about 0.2 K, and is insulating if either end of the switch is below about 0.15 K. The "on" conductance (7 mW/K at 0.25K) is limited by the surface area and gap between the copper leaves, the saturated vapor pressure of the He-3, and the Kapitza boundary resistance between the He-3 and the copper. The "off" conductance is determined by the helium containment shell which physically supports the two conductive ends. We have also designed and are building passive gas gap heat switches which will passively turn off near 1 K and 4 K. For these switches we rely on the rapidly changing vapor pressure of He-4 above neon or copper substrates, respectively, when the coverage is less than one monolayer. The different binding energies of the He-4 to the neon or copper give rise to the different temperatures where the switches transition between the on and off states.

  9. Giant magnetoresistance in silicene nanoribbons

    NASA Astrophysics Data System (ADS)

    Xu, Chengyong; Luo, Guangfu; Liu, Qihang; Zheng, Jiaxin; Zhang, Zhimeng; Nagase, Shigeru; Gao, Zhengxiang; Lu, Jing

    2012-05-01

    By performing first-principle quantum transport calculations, we predict a giant magnetoresistance in zigzag silicene nanoribbons (ZSiNRs) connecting two semi-infinite silicene electrodes through switch of the edge spin direction of ZSiNRs. Spin-filter efficiency of both the antiferromagnetic and ferromagnetic ZSiNRs is sign-changeable with the bias voltage. Therefore, potential application of silicene in spintronics devices is suggested.By performing first-principle quantum transport calculations, we predict a giant magnetoresistance in zigzag silicene nanoribbons (ZSiNRs) connecting two semi-infinite silicene electrodes through switch of the edge spin direction of ZSiNRs. Spin-filter efficiency of both the antiferromagnetic and ferromagnetic ZSiNRs is sign-changeable with the bias voltage. Therefore, potential application of silicene in spintronics devices is suggested. Electronic supplementary information (ESI) available: The total current contrasts between the AFM and FM configurations and the spin-resolved I-Vbias characteristics in the AFM and FM configurations of all the checked ZSiNRs as a function of bias voltage; the spin-resolved I-Vbias characteristics and SFEs of different-length 5-ZSiNR in the AFM and FM configurations as a function of bias voltage. See DOI: 10.1039/c2nr00037g

  10. High speed magneto-resistive random access memory

    NASA Technical Reports Server (NTRS)

    Wu, Jiin-Chuan (Inventor); Stadler, Henry L. (Inventor); Katti, Romney R. (Inventor)

    1992-01-01

    A high speed read MRAM memory element is configured from a sandwich of magnetizable, ferromagnetic film surrounding a magneto-resistive film which may be ferromagnetic or not. One outer ferromagnetic film has a higher coercive force than the other and therefore remains magnetized in one sense while the other may be switched in sense by a switching magnetic field. The magneto-resistive film is therefore sensitive to the amplitude of the resultant field between the outer ferromagnetic films and may be constructed of a high resistivity, high magneto-resistive material capable of higher sensing currents. This permits higher read voltages and therefore faster read operations. Alternate embodiments with perpendicular anisotropy, and in-plane anisotropy are shown, including an embodiment which uses high permeability guides to direct the closing flux path through the magneto-resistive material. High density, high speed, radiation hard, memory matrices may be constructed from these memory elements.

  11. Operation of an ADR Using Helium Exchange Gas as a Substitute for a Failed Heat Switch

    NASA Technical Reports Server (NTRS)

    Shirron, P.; DiPirro, M.; Kimball, M.; Sneiderman, G.; Porter, F. S.; Kilbourne, C.; Kelley, R.; Fujimoto, R.; Yoshida, S.; Takei, Y.; Mitsuda, K.

    2014-01-01

    The Soft X-ray Spectrometer (SXS) is one of four instruments on the Japanese Astro-H mission, which is currently planned for launch in late 2015. The SXS will perform imaging spectroscopy in the soft X-ray band (0.3-12 keV) using a 6 6 pixel array of microcalorimeters cooled to 50 mK. The detectors are cooled by a 3-stage adiabatic demagnetization refrigerator (ADR) that rejects heat to either a superfluid helium tank (at 1.2 K) or to a 4.5 K Joule-Thomson (JT) cryocooler. Four gas-gap heat switches are used in the assembly to manage heat flow between the ADR stages and the heat sinks. The engineering model (EM) ADR was assembled and performance tested at NASA/GSFC in November 2011, and subsequently installed in the EM dewar at Sumitomo Heavy Industries, Japan. During the first cooldown in July 2012, a failure of the heat switch that linked the two colder stages of the ADR to the helium tank was observed. Operation of the ADR requires some mechanism for thermally linking the salt pills to the heat sink, and then thermally isolating them. With the failed heat switch unable to perform this function, an alternate plan was devised which used carefully controlled amounts of exchange gas in the dewar's guard vacuum to facilitate heat exchange. The process was successfully demonstrated in November 2012, allowing the ADR to cool the detectors to 50 mK for hold times in excess of 10 h. This paper describes the exchange-gas-assisted recycling process, and the strategies used to avoid helium contamination of the detectors at low temperature.

  12. Operation of an ADR using helium exchange gas as a substitute for a failed heat switch

    NASA Astrophysics Data System (ADS)

    Shirron, P.; DiPirro, M.; Kimball, M.; Sneiderman, G.; Porter, F. S.; Kilbourne, C.; Kelley, R.; Fujimoto, R.; Yoshida, S.; Takei, Y.; Mitsuda, K.

    2014-11-01

    The Soft X-ray Spectrometer (SXS) is one of four instruments on the Japanese Astro-H mission, which is currently planned for launch in late 2015. The SXS will perform imaging spectroscopy in the soft X-ray band (0.3-12 keV) using a 6 × 6 pixel array of microcalorimeters cooled to 50 mK. The detectors are cooled by a 3-stage adiabatic demagnetization refrigerator (ADR) that rejects heat to either a superfluid helium tank (at 1.2 K) or to a 4.5 K Joule-Thomson (JT) cryocooler. Four gas-gap heat switches are used in the assembly to manage heat flow between the ADR stages and the heat sinks. The engineering model (EM) ADR was assembled and performance tested at NASA/GSFC in November 2011, and subsequently installed in the EM dewar at Sumitomo Heavy Industries, Japan. During the first cooldown in July 2012, a failure of the heat switch that linked the two colder stages of the ADR to the helium tank was observed. Operation of the ADR requires some mechanism for thermally linking the salt pills to the heat sink, and then thermally isolating them. With the failed heat switch unable to perform this function, an alternate plan was devised which used carefully controlled amounts of exchange gas in the dewar's guard vacuum to facilitate heat exchange. The process was successfully demonstrated in November 2012, allowing the ADR to cool the detectors to 50 mK for hold times in excess of 10 h. This paper describes the exchange-gas-assisted recycling process, and the strategies used to avoid helium contamination of the detectors at low temperature.

  13. Design and development of a shape memory alloy activated heat pipe-based thermal switch

    NASA Astrophysics Data System (ADS)

    Benafan, O.; Notardonato, W. U.; Meneghelli, B. J.; Vaidyanathan, R.

    2013-10-01

    This work reports on the design, fabrication and testing of a thermal switch wherein the open and closed states were actuated by shape memory alloy (SMA) elements while heat was transferred by a two-phase heat pipe. The motivation for such a switch comes from NASA’s need for thermal management in advanced spaceport applications associated with future lunar and Mars missions. As the temperature can approximately vary between -233 and 127 ° C during lunar day/night cycles, the switch was designed to reject heat from a cryogen tank into space during the night cycle while providing thermal isolation during the day cycle. A Ni47.1Ti49.6Fe3.3 (at.%) alloy that exhibited a reversible phase transformation between a trigonal R-phase and a cubic austenite phase was used as the sensing and actuating elements. Thermomechanical actuation, accomplished through an antagonistic spring system, resulted in strokes up to 7 mm against bias forces of up to 45 N. The actuation system was tested for more than thirty cycles, equivalent to one year of operation. The thermal performance, accomplished via a variable length, closed two-phase heat pipe, was evaluated, resulting in heat transfer rates of 13 W using pentane and 10 W using R-134a as working fluids. Experimental data were also compared to theoretical predictions where possible. Direct comparisons between different design approaches of SMA helical actuators, highlighting the effects of the helix angle, were carried out to give a layout of more accurate design methodologies.

  14. Development of Active Gas-Gap Heat Switch for Double-Stage Adiabatic Demagnetization Refrigerators

    NASA Astrophysics Data System (ADS)

    Ishisaki, Y.; Henmi, K.; Akamatsu, H.; Enoki, T.; Ohashi, T.; Hoshino, A.; Shinozaki, K.; Matsuo, H.; Okada, N.; Oshima, T.

    2012-06-01

    We designed and fabricated an active gas-gap heat switch (AGGHS), which ON/OFF the heat conduction between the 1st stage (0.05-2 K) and the 2nd stage (1-4 K) of a double-stage adiabatic demagnetization refrigerator (DADR). Our design geometrically separates two components which dominates the ON or OFF performance, and achieved heat conductivity of 6 mW/K (ON) or 4 μW/K (OFF) at 2 K. The ON/OFF is controlled by a heater attached to the charcoal box to adsorb/deadsorb 4He gas inside. We introduced the AGGHS to the DADR and successfully cooled the detector stage down to 60 mK, working properly more than a year.

  15. A (He-3)-gap heat switch for use below 2 K in zero g

    NASA Technical Reports Server (NTRS)

    Roach, Pat R.; Helvensteijn, Ben P. M.

    1992-01-01

    We have designed and tested a compact heat switch that has a simple design and a very large ON/OFF ratio. The design uses concentric cylinders of copper that can be fabricated with higher precision and with thinner web thickness than other designs. It is assembled with a technique that carefully controls the narrow gap between adjacent segments. These features allow a very large surface area for conduction to be fitted into a small volume. The conduction medium is liquid or gaseous He-3, which is put into or taken out of the switch by a small nearby charcoal pump in order to avoid an external mechanical pump and a long pump line. Measurements of its performance down to 1 K show an ON/OFF conduction ratio of about 4000.

  16. A He-3-gap heat switch for use below 2 K in zero G

    NASA Technical Reports Server (NTRS)

    Roach, Pat R.; Helvensteijn, Ben P. M.

    1991-01-01

    We have designed and tested a compact heat switch that has a simple design and a very large ON/OFF ratio. The design uses concentric cylinders of copper that can be fabricated with higher precision and with thinner web thickness than other designs. It is assembled with a technique that carefully controls the narrow gap between adjacent segments. These features allow a very large surface area for conduction to be fitted into a small volume. The conduction medium is liquid or gaseous He-3 which is put into or taken out of the switch by a small nearby charcoal pump in order to avoid an external mechanical pump and a long pump line. Measurements of its performance down to 1 K show an ON/OFF conduction ratio of about 4000.

  17. Magnetoresistive system with concentric ferromagnetic asymmetric nanorings

    SciTech Connect

    Avila, J. I. Tumelero, M. A.; Pasa, A. A.; Viegas, A. D. C.

    2015-03-14

    A structure consisting of two concentric asymmetric nanorings, each displaying vortex remanent states, is studied with micromagnetic calculations. By orienting in suitable directions, both the asymmetry of the rings and a uniform magnetic field, the vortices chiralities can be switched from parallel to antiparallel, obtaining in this way the analogue of the ferromagnetic and antiferromagnetic configurations found in bar magnets pairs. Conditions on the thickness of single rings to obtain vortex states, as well as formulas for their remanent magnetization are given. The concentric ring structure enables the creation of magnetoresistive systems comprising the qualities of magnetic nanorings, such as low stray fields and high stability. A possible application is as contacts in spin injection in semiconductors, and estimations obtained here of magnetoresistance change for a cylindrical spin injection based device show significant variations comparable to linear geometries.

  18. Heat switch effect in an antiferromagnetic insulator Co3V2O8

    NASA Astrophysics Data System (ADS)

    Zhao, X.; Wu, J. C.; Zhao, Z. Y.; He, Z. Z.; Song, J. D.; Zhao, J. Y.; Liu, X. G.; Sun, X. F.; Li, X. G.

    2016-06-01

    We report a heat switch effect in single crystals of an antiferromagnet Co3V2O8, that is, the thermal conductivity (κ) can be changed with magnetic field in an extremely large scale. Due to successive magnetic phase transitions at 12-6 K, the zero-field κ(T ) displays a deep minimum at 6.7 K and rather small magnitude at low temperatures. Both the temperature and field dependencies of κ demonstrate that the phonons are strongly scattered at the regime of magnetic phase transitions. Magnetic field can suppress magnetic scattering effect and significantly recover the phonon thermal conductivity. In particular, a 14 T field along the a axis increases the κ at 7.5 K up to 100 times. For H ∥c , the magnitude of κ can be suppressed down to ˜8% at some field-induced transition and can be enhanced up to 20 times at 14 T. The present results demonstrate that it is possible to design a kind of heat switch in the family of magnetic materials.

  19. Molecular anisotropic magnetoresistance

    NASA Astrophysics Data System (ADS)

    Otte, Fabian; Heinze, Stefan; Mokrousov, Yuriy

    2015-12-01

    Using density functional theory calculations, we demonstrate that the effect of anisotropic magnetoresistance (AMR) can be enhanced by orders of magnitude with respect to conventional bulk ferromagnets in junctions containing molecules sandwiched between ferromagnetic leads. We study ballistic transport in metal-benzene complexes contacted by 3 d transition-metal wires. We show that a gigantic AMR can arise from spin-orbit coupling effects in the leads, drastically enhanced by orbital-symmetry filtering properties of the molecules. We further discuss how this molecular anisotropic magnetoresistance (MAMR) can be tuned by the proper choice of materials and their electronic properties.

  20. Thermal analysis of an indirectly heat pulsed non-volatile phase change material microwave switch

    SciTech Connect

    Young, Robert M. El-Hinnawy, Nabil; Borodulin, Pavel; Wagner, Brian P.; King, Matthew R.; Jones, Evan B.; Howell, Robert S.; Lee, Michael J.

    2014-08-07

    We show the finite element simulation of the melt/quench process in a phase change material (GeTe, germanium telluride) used for a radio frequency switch. The device is thermally activated by an independent NiCrSi (nickel chrome silicon) thin film heating element beneath a dielectric separating it electrically from the phase change layer. A comparison is made between the predicted and experimental minimum power to amorphize (MPA) for various thermal pulse powers and pulse time lengths. By including both the specific heat and latent heat of fusion for GeTe, we find that the MPA and the minimum power to crystallize follow the form of a hyperbola on the power time effect plot. We also find that the simulated time at which the entire center GeTe layer achieves melting accurately matches the MPA curve for pulse durations ranging from 75–1500 ns and pulse powers from 1.6–4 W.

  1. Magnetoresistance of Au films

    DOE PAGES

    Zhang, D. L.; Song, X. H.; Zhang, X.; Zhang, Xiaoguang

    2014-12-10

    Measurement of the magnetoresistance (MR) of Au films as a function of temperature and film thickness reveals a strong dependence on grain size distribution and clear violation of the Kohler s rule. Using a model of random resistor network, we show that this result can be explained if the MR arises entirely from inhomogeneity due to grain boundary scattering and thermal activation of grain boundary atoms.

  2. Giant magnetoresistive sensor

    DOEpatents

    Stearns, Daniel G.; Vernon, Stephen P.; Ceglio, Natale M.; Hawryluk, Andrew M.

    1999-01-01

    A magnetoresistive sensor element with a three-dimensional micro-architecture is capable of significantly improved sensitivity and highly localized measurement of magnetic fields. The sensor is formed of a multilayer film of alternately magnetic and nonmagnetic materials. The sensor is optimally operated in a current perpendicular to plane mode. The sensor is useful in magnetic read/write heads, for high density magnetic information storage and retrieval.

  3. Magnetoresistive emulsion analyzer.

    PubMed

    Lin, Gungun; Baraban, Larysa; Han, Luyang; Karnaushenko, Daniil; Makarov, Denys; Cuniberti, Gianaurelio; Schmidt, Oliver G

    2013-01-01

    We realize a magnetoresistive emulsion analyzer capable of detection, multiparametric analysis and sorting of ferrofluid-containing nanoliter-droplets. The operation of the device in a cytometric mode provides high throughput and quantitative information about the dimensions and magnetic content of the emulsion. Our method offers important complementarity to conventional optical approaches involving ferrofluids, and paves the way to the development of novel compact tools for diagnostics and nanomedicine including drug design and screening. PMID:23989504

  4. Magnetoresistive Emulsion Analyzer

    PubMed Central

    Lin, Gungun; Baraban, Larysa; Han, Luyang; Karnaushenko, Daniil; Makarov, Denys; Cuniberti, Gianaurelio; Schmidt, Oliver G.

    2013-01-01

    We realize a magnetoresistive emulsion analyzer capable of detection, multiparametric analysis and sorting of ferrofluid-containing nanoliter-droplets. The operation of the device in a cytometric mode provides high throughput and quantitative information about the dimensions and magnetic content of the emulsion. Our method offers important complementarity to conventional optical approaches involving ferrofluids, and paves the way to the development of novel compact tools for diagnostics and nanomedicine including drug design and screening. PMID:23989504

  5. Negative magnetoresistivity in holography

    NASA Astrophysics Data System (ADS)

    Sun, Ya-Wen; Yang, Qing

    2016-09-01

    Negative magnetoresistivity is a special magnetotransport property associated with chiral anomaly in four dimensional chiral anomalous systems, which refers to the transport behavior that the DC longitudinal magnetoresistivity decreases with increasing magnetic field. We calculate the longitudinal magnetoconductivity in the presence of back-reactions of the magnetic field to gravity in holographic zero charge and axial charge density systems with and without axial charge dissipation. In the absence of axial charge dissipation, we find that the quantum critical conductivity grows with increasing magnetic field when the backreaction strength is larger than a critical value, in contrast to the monotonically decreasing behavior of quantum critical conductivity in the probe limit. With axial charge dissipation, we find the negative magnetoresistivity behavior. The DC longitudinal magnetoconductivity scales as B in the large magnetic field limit, which deviates from the exact B 2 scaling of the probe limit result. In both cases, the small frequency longitudinal magnetoconductivity still agrees with the formula obtained from the hydrodynamic linear response theory, even in the large magnetic field limit.

  6. Low-current-density spin-transfer switching in Gd{sub 22}Fe{sub 78}-MgO magnetic tunnel junction

    SciTech Connect

    Kinjo, Hidekazu Machida, Kenji; Aoshima, Ken-ichi; Kato, Daisuke; Kuga, Kiyoshi; Kikuchi, Hiroshi; Shimidzu, Naoki; Matsui, Koichi

    2014-05-28

    Magnetization switching of a relatively thick (9 nm) Gd-Fe free layer was achieved with a low spin injection current density of 1.0 × 10{sup 6} A/cm{sup 2} using MgO based magnetic tunnel junction devices, fabricated for light modulators. At about 560 × 560 nm{sup 2} in size, the devices exhibited a tunneling magnetoresistance ratio of 7%. This low-current switching is mainly attributed to thermally assisted spin-transfer switching in consequence of its thermal magnetic behavior arising from Joule heating.

  7. Superconducting magnetoresistance in ferromagnet/superconductor/ferromagnet trilayers

    NASA Astrophysics Data System (ADS)

    Stamopoulos, D.; Aristomenopoulou, E.

    2015-08-01

    Magnetoresistance is a multifaceted effect reflecting the diverse transport mechanisms exhibited by different kinds of plain materials and hybrid nanostructures; among other, giant, colossal, and extraordinary magnetoresistance versions exist, with the notation indicative of the intensity. Here we report on the superconducting magnetoresistance observed in ferromagnet/superconductor/ferromagnet trilayers, namely Co/Nb/Co trilayers, subjected to a parallel external magnetic field equal to the coercive field. By manipulating the transverse stray dipolar fields that originate from the out-of-plane magnetic domains of the outer layers that develop at coercivity, we can suppress the supercurrent of the interlayer. We experimentally demonstrate a scaling of the magnetoresistance magnitude that we reproduce with a closed-form phenomenological formula that incorporates relevant macroscopic parameters and microscopic length scales of the superconducting and ferromagnetic structural units. The generic approach introduced here can be used to design novel cryogenic devices that completely switch the supercurrent ‘on’ and ‘off’, thus exhibiting the ultimate magnetoresistance magnitude 100% on a regular basis.

  8. Superconducting magnetoresistance in ferromagnet/superconductor/ferromagnet trilayers.

    PubMed

    Stamopoulos, D; Aristomenopoulou, E

    2015-01-01

    Magnetoresistance is a multifaceted effect reflecting the diverse transport mechanisms exhibited by different kinds of plain materials and hybrid nanostructures; among other, giant, colossal, and extraordinary magnetoresistance versions exist, with the notation indicative of the intensity. Here we report on the superconducting magnetoresistance observed in ferromagnet/superconductor/ferromagnet trilayers, namely Co/Nb/Co trilayers, subjected to a parallel external magnetic field equal to the coercive field. By manipulating the transverse stray dipolar fields that originate from the out-of-plane magnetic domains of the outer layers that develop at coercivity, we can suppress the supercurrent of the interlayer. We experimentally demonstrate a scaling of the magnetoresistance magnitude that we reproduce with a closed-form phenomenological formula that incorporates relevant macroscopic parameters and microscopic length scales of the superconducting and ferromagnetic structural units. The generic approach introduced here can be used to design novel cryogenic devices that completely switch the supercurrent 'on' and 'off', thus exhibiting the ultimate magnetoresistance magnitude 100% on a regular basis.

  9. Superconducting magnetoresistance in ferromagnet/superconductor/ferromagnet trilayers

    PubMed Central

    Stamopoulos, D.; Aristomenopoulou, E.

    2015-01-01

    Magnetoresistance is a multifaceted effect reflecting the diverse transport mechanisms exhibited by different kinds of plain materials and hybrid nanostructures; among other, giant, colossal, and extraordinary magnetoresistance versions exist, with the notation indicative of the intensity. Here we report on the superconducting magnetoresistance observed in ferromagnet/superconductor/ferromagnet trilayers, namely Co/Nb/Co trilayers, subjected to a parallel external magnetic field equal to the coercive field. By manipulating the transverse stray dipolar fields that originate from the out-of-plane magnetic domains of the outer layers that develop at coercivity, we can suppress the supercurrent of the interlayer. We experimentally demonstrate a scaling of the magnetoresistance magnitude that we reproduce with a closed-form phenomenological formula that incorporates relevant macroscopic parameters and microscopic length scales of the superconducting and ferromagnetic structural units. The generic approach introduced here can be used to design novel cryogenic devices that completely switch the supercurrent ‘on’ and ‘off’, thus exhibiting the ultimate magnetoresistance magnitude 100% on a regular basis. PMID:26306543

  10. Gas gap heat switch for a cryogen-free magnet system

    NASA Astrophysics Data System (ADS)

    Barreto, J.; Borges de Sousa, P.; Martins, D.; Kar, S.; Bonfait, G.; Catarino, I.

    2015-12-01

    Cryogen-free superconducting magnet systems (CFMS) have become popular over the last two decades for the simple reason that the use of liquid helium is rather cumbersome and that helium is a scarce resource. Some available CFMS use a mechanical cryocooler as the magnet's cold source. However, the variable temperature insert (VTI) for some existing CFMS are not strictly cryogen-free as they are still based on helium gas circulation through the sample space. We designed a prototype of a gas gap heat switch (GGHS) that allows a thermal management of a completely cryogen-free magnet system, with no helium losses. The idea relies on a parallel cooling path to a variable temperature insert (VTI) of a magnetic properties measurement system under development at Inter-University Accelerator Centre. A Gifford-McMahon cryocooler (1.5 W @ 4.2 K) would serve primarily as the cold source of the superconducting magnet, dedicating 1 W to this cooling, under quite conservative safety factors. The remaining cooling power (0.5 W) is to be diverted towards a VTI through a controlled GGHS that was designed and built with a 80 μm gap width. The built GGHS thermal performance was measured at 4 K, using helium as the exchange gas, and its conductance is compared both with a previously developed analytical model and a finite element method. Lessons learned lead to a new and more functional prototype yet to be reported.

  11. 1985 primary heating fuel use and switching: Assessment of the market for conservation in the Northwest: Phase 2

    SciTech Connect

    Hattrup, M.P.; Nordi, R.T.; Ivey, D.L.

    1987-05-01

    This report presents information on the types of primary heating fuels used in residences in the Pacific Northwest region and how the heating fuels affect the level of investment in energy conservation measures (ECMs) by occupants of the residences. The types of heating fuel switching that occurred during the past two years (1983-1985) is also presented. The information was collected from random telephone surveys of households in Idaho, Oregon, Washington, and western Montana. The Pacific Northwest Laboratory (PNL) conducted analyses of the survey results for the Bonneville Power Administration (BPA) to obtain a better understanding of consumer attitudes and behaviors and to facilitate conservation program planning, design, and marketing. This report covers the following hypotheses: (1) there is no relationship between investing in ECMs and the type of primary heating fuel used in a residence; and (2) there is no relationship between the decision to switch to a new primary heating fuel during 1983-1985 and the original type of primary heating fuel used in the residence.

  12. A Novel Soft Switching PWM Power Frequency Converter with Non DC Smoothing Filter Link for Consumer High Frequency Induction Heating

    NASA Astrophysics Data System (ADS)

    Sugimura, Hisayuki; Muraoka, Hidekazu; Hiraki, Eiji; Hirota, Izuo; Yasui, Kenji; Omori, Hideki; Lee, Hyun-Woo; Nakaoka, Mutsuo

    In this paper, high frequency power converter without DC smoothing electrolytic capacitor filter link which convert the 100V/200Vrms and 60Hz single phase utility frequency AC power into a high frequency AC. This proposed high frequency AC power converter without electrolytic capacitor filter can operate under a principle of soft switching PWM based on a lossless capacitor snubber is proposed and demonstrated for consumer high frequency induction heating (IH). In particular, this high frequency power converter capable of producing a high frequency AC more than 20kHz is developed for consumer IH applications as hot water producer and steamer based on the specially designed spiral type IH-Dual Packs Heater (DPH), which includes the dual mode pulse modulation control scheme based on soft switching PWM for high output power setting and commercial frequency AC zero voltage soft switching pulse density modulation (PDM) for low output power settings. This developed high frequency power frequency converter using trench gate IGBTs is clarified on the basis of experimental and simulation results for its circuit operation of the utility frequency AC to high frequency AC frequency PWM power converter without the electrolytic capacitor bank DC filter link for the IH hot water and IH steamer. These IH appliances are based upon an innovative electromagnetic IH-DPH for fluid heating as heat exchanger in consumer pipeline. Finally, its power regulation characteristics, power conversion efficiency and harmonic current components characteristics including power factor in utility AC grid side are evaluated and discussed from an experimental point of view. The practical effectiveness of this utility frequency AC to high frequency AC soft switching high power frequency converter defined conveniently as high frequency soft switching cyclo-inverter is proved as one of the important products effective for next generation IH application all electricity power utilizations.

  13. Magnetoresistive chip cytometer.

    PubMed

    Loureiro, J; Andrade, P Z; Cardoso, S; da Silva, C L; Cabral, J M; Freitas, P P

    2011-07-01

    Although conventional state-of-the-art flow cytometry systems provide rapid and reliable analytical capacities, they are bulky, expensive and complex. To overcome these drawbacks modern flow cytometers have been developed with enhanced portability for on-site measurements. Unlike external fluorescent/optical detectors, magnetoresistive sensors are micro-fabricated, can be integrated within microfluidic channels, and can detect magnetically labelled cells. This work describes the real-time detection of single magnetically labelled cells with a magnetoresistive based cell cytometer. For Kg1-a cells magnetically labelled with 50 nm CD34 microbeads (Milteny) flowing through a 150 μm wide, 14 μm high microchannel, with speeds around 1 cm s(-1), bipolar signals with an average amplitude of 10-20 μV were observed corresponding to cell events. The number of cells counted by the spin valve cytometer has been compared with that obtained with a hemocytometer. Both methods agree within the respective error bars. PMID:21562656

  14. Support of NASA ADR/ Cross-Enterprise NRA Advanced Adiabatic Demagnetization Refrigerators for Continuous Cooling from 10K to 50mK, Development of a Heat Switch

    NASA Technical Reports Server (NTRS)

    Richards, Paul L.

    2005-01-01

    Mechanical heat switches are used in conjunction with sorption refrigerators, adiabatic demagnetization refrigerators and for other cryogenic tasks including the pre-cooling cryogenic systems. They use a mechanical actuator which closes Au plated Cu jaws on an Au plated Cu bar. The thermal conductance in the closed position is essentially independent of the area of the jaws and proportional to the force applied. It varies linearly with T. It is approximately 10mW/K for 200 N at 1.5K. In some applications, the heat switch can be driven from outside the cryostat by a rotating rod and a screw. Such heat switches are available commercially from several sources. In other applications, including systems for space, it is desirable to drive the switch using a cold linear motor, or solenoid. Superconducting windings are used at temperatures s 4.2K to minimize power dissipation, but are not appropriate for pre-cooling a system at higher temperatures. This project was intended to improve the design of solenoid activated mechanical heat switches and to provide such switches as required to support the development of Advanced Adiabatic Demagnetization Refrigerators for Continuous Cooling from 10 K to 50 mK at GSFC. By the time funding began in 5/1/01, the immediate need for mechanical heat switches at GSFC had subsided but, at the same time, the opportunity had arisen to improve the design of mechanical heat switching by incorporating a "latching solenoid". In this device, the solenoid current is required only for changing the state of the switch and not during the whole time that the switch is closed.

  15. Theoretical insights into the mechanism of redox switch in heat shock protein Hsp33.

    PubMed

    Enescu, Mironel; Kassim, Rima; Ramseyer, Christophe; Cardey, Bruno

    2015-04-01

    Heat shock protein 33 (Hsp33) is activated in the presence of H2O2 by a very interesting redox switch based on a tetra-coordinated zinc-cysteine complex present in the fully reduced and inactive protein form. The oxidation of this zinc center by H2O2 induces formation of two S-S bridges and the zinc release followed by the protein unfolding. We report here a theoretical study of the step-by-step sequence of the overall process starting with the oxidation of the first cysteine residue and ending with the zinc release. Each reaction step is characterized by its Gibbs free energy barrier (∆G (‡)). It is predicted that the first reaction step consists in the oxidation of Cys263 by H2O2 which is by far the most reactive cysteine (∆G (‡) = 15.4 kcal mol(-1)). The next two reaction steps are the formation of the first S-S bridge between Cys263 and Cys266 (∆G (‡) = 13.6 kcal mol(-1)) and the oxidation of Cys231 by H2O2 (∆G (‡) = 20.4 kcal mol(-1)). It is then shown that the formation of the second S-S bridge (Cys231-Cys233) before the zinc release is most unlikely (∆G (‡) = 34.8 kcal mol(-1)). Instead, the release of zinc just after the oxidation of the third cysteine (Cys231) is shown to be thermodynamically (dissociation Gibbs free energy ∆G d = 6.0 kcal mol(-1)) and kinetically (reaction rate constant k d ≈ 10(6) s(-1)) favored. This result is in good agreement with the experimental data on the oxidation mechanism of Hsp33 zinc center available to date. PMID:25637463

  16. Tunnel magnetoresistance of diamondoids

    NASA Astrophysics Data System (ADS)

    Matsuura, Yukihito

    2016-10-01

    Tunnel magnetoresistance (TMR) of diamondoids has been predicted by first principles density functional theory. Diamantane was used as a basic molecular proxy for diamondoids because hydrogen atoms in the apical position are easily substituted for a thiol group. The pristine diamantane exhibited a low TMR ratio of 7%, and boron-substitution considerably decreased the TMR ratio. Conversely, nitrogen-substitution enhanced the TMR ratio by up to 20%. Heteroatom-substitution changes the tunneling probabilities by varying the molecular bond lengths. Furthermore, when the spins of the electrodes are parallel, the heteroatoms resulted in transmittance probabilities at an energy range near the Fermi level. Consequently, heteroatom-substitution can control the TMR ratios of diamondoids very well.

  17. Magnetoresistance of Au films

    SciTech Connect

    Zhang, D. L. Song, X. H.; Zhang, X.; Zhang, X.-G.

    2014-12-14

    Classical magnetoresistance (MR) in nonmagnetic metals are conventionally understood in terms of the Kohler rule, with violation usually viewed as anomalous electron transport, in particular, as evidence of non-Fermi liquid behavior. Measurement of the MR of Au films as a function of temperature and film thickness reveals a strong dependence on grain size distribution and clear violation of the Kohler rule. Using a model of random resistor network, we show that this result can be explained if the MR arises entirely from inhomogeneity due to grain boundary scattering and thermal activation of grain boundary atoms. Consequently, the Kohler rule should not be used to distinguish normal and anomalous electron transport in solids.

  18. Transversal magnetoresistance in Weyl semimetals

    NASA Astrophysics Data System (ADS)

    Klier, J.; Gornyi, I. V.; Mirlin, A. D.

    2015-11-01

    We explore theoretically the magnetoresistivity of three-dimensional Weyl and Dirac semimetals in transversal magnetic fields within two alternative models of disorder: (i) short-range impurities and (ii) charged (Coulomb) impurities. Impurity scattering is treated using the self-consistent Born approximation. We find that an unusual broadening of Landau levels leads to a variety of regimes of the resistivity scaling in the temperature-magnetic field plane. In particular, the magnetoresistance is nonmonotonous for the white-noise disorder model. For H →0 the magnetoresistance for short-range impurities vanishes in a nonanalytic way as H1 /3. In the limits of strongest magnetic fields H , the magnetoresistivity vanishes as 1 /H for pointlike impurities, while it is linear and positive in the model with Coulomb impurities.

  19. Magnetoresistance, electrical conductivity, and Hall effect of glassy carbon

    SciTech Connect

    Baker, D.F.

    1983-02-01

    These properties of glassy carbon heat treated for three hours between 1200 and 2700/sup 0/C were measured from 3 to 300/sup 0/K in magnetic fields up to 5 tesla. The magnetoresistance was generally negative and saturated with reciprocal temperature, but still increased as a function of magnetic field. The maximum negative magnetoresistance measured was 2.2% for 2700/sup 0/C material. Several models based on the negative magnetoresistance being proportional to the square of the magnetic moment were attempted; the best fit was obtained for the simplest model combining Curie and Pauli paramagnetism for heat treatments above 1600/sup 0/C. Positive magnetoresistance was found only in less than 1600/sup 0/C treated glassy carbon. The electrical conductivity, of the order of 200 (ohm-cm)/sup -1/ at room temperature, can be empirically written as sigma = A + Bexp(-CT/sup -1/4) - DT/sup -1/2. The Hall coefficient was independent of magnetic field, insensitive to temperature, but was a strong function of heat treatment temperature, crossing over from negative to positive at about 1700/sup 0/C and ranging from -0.048 to 0.126 cm/sup 3//coul. The idea of one-dimensional filaments in glassy carbon suggested by the electrical conductivity is compatible with the present consensus view of the microstructure.

  20. Evaluation of Magnetoresistive RAM for Space Applications

    NASA Technical Reports Server (NTRS)

    Heidecker, Jason

    2014-01-01

    Magnetoresistive random-access memory (MRAM) is a non-volatile memory that exploits electronic spin, rather than charge, to store data. Instead of moving charge on and off a floating gate to alter the threshold voltage of a CMOS transistor (creating different bit states), MRAM uses magnetic fields to flip the polarization of a ferromagnetic material thus switching its resistance and bit state. These polarized states are immune to radiation-induced upset, thus making MRAM very attractive for space application. These magnetic memory elements also have infinite data retention and erase/program endurance. Presented here are results of reliability testing of two space-qualified MRAM products from Aeroflex and Honeywell.

  1. Switching from usual brand cigarettes to a tobacco-heating cigarette or snus: Part 2. Biomarkers of exposure.

    PubMed

    Ogden, Michael W; Marano, Kristin M; Jones, Bobbette A; Morgan, Walter T; Stiles, Mitchell F

    2015-01-01

    A randomized, multi-center study of adult cigarette smokers switched to tobacco-heating cigarettes, snus or ultra-low machine yield tobacco-burning cigarettes (50/group) was conducted, and subjects' experience with the products was followed for 24 weeks. Differences in biomarkers of tobacco exposure between smokers and never smokers at baseline and among groups relative to each other and over time were assessed. Results indicated reduced exposure to many potentially harmful constituents found in cigarette smoke following product switching. Findings support differences in exposure from the use of various tobacco products and are relevant to the understanding of a risk continuum among tobacco products (ClinicalTrials.gov Identifier: NCT02061917). PMID:26554277

  2. Switching from usual brand cigarettes to a tobacco-heating cigarette or snus: Part 2. Biomarkers of exposure

    PubMed Central

    Ogden, Michael W.; Marano, Kristin M.; Jones, Bobbette A.; Morgan, Walter T.; Stiles, Mitchell F.

    2015-01-01

    Abstract A randomized, multi-center study of adult cigarette smokers switched to tobacco-heating cigarettes, snus or ultra-low machine yield tobacco-burning cigarettes (50/group) was conducted, and subjects’ experience with the products was followed for 24 weeks. Differences in biomarkers of tobacco exposure between smokers and never smokers at baseline and among groups relative to each other and over time were assessed. Results indicated reduced exposure to many potentially harmful constituents found in cigarette smoke following product switching. Findings support differences in exposure from the use of various tobacco products and are relevant to the understanding of a risk continuum among tobacco products (ClinicalTrials.gov Identifier: NCT02061917). PMID:26554277

  3. Spatiotemporal Control of Vascular Endothelial Growth Factor Expression Using a Heat-Shock-Activated, Rapamycin-Dependent Gene Switch

    PubMed Central

    Martín-Saavedra, Francisco M.; Wilson, Christopher G.; Voellmy, Richard; Vilaboa, Nuria

    2013-01-01

    Abstract A major challenge in regenerative medicine is to develop methods for delivering growth and differentiation factors in specific spatial and temporal patterns, thereby mimicking the natural processes of development and tissue repair. Heat shock (HS)-inducible gene expression systems can respond to spatial information provided by localized heating, but are by themselves incapable of sustained expression. Conversely, gene switches activated by small molecules provide tight temporal control and sustained expression, but lack mechanisms for spatial targeting. Here we combine the advantages of HS and ligand-activated systems by developing a novel rapamycin-regulated, HS-inducible gene switch that provides spatial and temporal control and sustained expression of transgenes such as firefly luciferase and vascular endothelial growth factor (VEGF). This gene circuit exhibits very low background in the uninduced state and can be repeatedly activated up to 1 month. Furthermore, dual regulation of VEGF induction in vivo is shown to stimulate localized vascularization, thereby providing a route for temporal and spatial control of angiogenesis. PMID:23527589

  4. Photoinduced local heating in silica photonic crystals for fast and reversible switching.

    PubMed

    Gallego-Gómez, Francisco; Blanco, Alvaro; López, Cefe

    2012-12-01

    Fast and reversible photonic-bandgap tunability is achieved in silica artificial opals by local heating. The effect is fully reversible as heat rapidly dissipates through the non-irradiated structure without active cooling and water is readsorbed. The performance is strongly enhanced by decreasing the photoirradiated opal volume, allowing bandgap shifts of 12 nm and response times of 20 ms. PMID:22976241

  5. Magnetoresistance in permalloy/GaMnAs circular microstructures

    NASA Astrophysics Data System (ADS)

    Guenther, Justin Michael

    When two ferromagnetic materials are deposited directly on top of one another, their magnetic moments lock together and will no longer switch independently. This effect is known as exchange spring coupling. Reports in literature indicate that a bilayer composed of GaMnAs and permalloy may be a rare exception. Such a bilayer would allow for independent switching and, as a result, giant magnetoresistance. For this thesis, we verified the independent switching of continuous films of GaMnAs and expanded on existing literature. We also investigated GMR in bilayers. Samples were fabricated and measured using novel techniques and software developed specifically for this project. Transport measurements of GaMnAs/Py bilayers revealed a minimal to non-existent GMR effect; instead, the main discernible effect was due to AMR of the bulk substrate of the samples. This thesis also details the construction process of an inexpensive, temporary cleanroom environment.

  6. Switching from usual brand cigarettes to a tobacco-heating cigarette or snus: Part 1. Study design and methodology.

    PubMed

    Ogden, Michael W; Marano, Kristin M; Jones, Bobbette A; Stiles, Mitchell F

    2015-01-01

    A randomized, multi-center study was conducted to assess potential improvement in health status measures, as well as changes in biomarkers of tobacco exposure and biomarkers of biological effect, in current adult cigarette smokers switched to tobacco-heating cigarettes, snus or ultra-low machine yield tobacco-burning cigarettes (50/group) evaluated over 24 weeks. Study design, conduct and methodology are presented here along with subjects' disposition, characteristics, compliance and safety results. This design and methodology, evaluating generally healthy adult smokers over a relatively short duration, proved feasible. Findings from this randomized study provide generalized knowledge of the risk continuum among various tobacco products (ClinicalTrials.gov Identifier: NCT02061917). PMID:26525849

  7. Switching from usual brand cigarettes to a tobacco-heating cigarette or snus: Part 3. Biomarkers of biological effect.

    PubMed

    Ogden, Michael W; Marano, Kristin M; Jones, Bobbette A; Morgan, Walter T; Stiles, Mitchell F

    2015-01-01

    A randomized, multi-center study of adult cigarette smokers switched to tobacco-heating cigarettes, snus or ultra-low machine yield tobacco-burning cigarettes (50/group) for 24 weeks was conducted. Evaluation of biomarkers of biological effect (e.g. inflammation, lipids, hypercoaguable state) indicated that the majority of consistent and statistically significant improvements over time within each group were observed in markers of inflammation. Consistent and statistically significant differences in pairwise comparisons between product groups were not observed. These findings are relevant to the understanding of biomarkers of biological effect related to cigarette smoking as well as the risk continuum across various tobacco products (ClinicalTrials.gov Identifier: NCT02061917). PMID:26525962

  8. Switching from usual brand cigarettes to a tobacco-heating cigarette or snus: Part 3. Biomarkers of biological effect

    PubMed Central

    Ogden, Michael W.; Marano, Kristin M.; Jones, Bobbette A.; Morgan, Walter T.; Stiles, Mitchell F.

    2015-01-01

    Abstract A randomized, multi-center study of adult cigarette smokers switched to tobacco-heating cigarettes, snus or ultra-low machine yield tobacco-burning cigarettes (50/group) for 24 weeks was conducted. Evaluation of biomarkers of biological effect (e.g. inflammation, lipids, hypercoaguable state) indicated that the majority of consistent and statistically significant improvements over time within each group were observed in markers of inflammation. Consistent and statistically significant differences in pairwise comparisons between product groups were not observed. These findings are relevant to the understanding of biomarkers of biological effect related to cigarette smoking as well as the risk continuum across various tobacco products (ClinicalTrials.gov Identifier: NCT02061917). PMID:26525962

  9. Switching from usual brand cigarettes to a tobacco-heating cigarette or snus: Part 1. Study design and methodology

    PubMed Central

    Ogden, Michael W.; Marano, Kristin M.; Jones, Bobbette A.; Stiles, Mitchell F.

    2015-01-01

    Abstract A randomized, multi-center study was conducted to assess potential improvement in health status measures, as well as changes in biomarkers of tobacco exposure and biomarkers of biological effect, in current adult cigarette smokers switched to tobacco-heating cigarettes, snus or ultra-low machine yield tobacco-burning cigarettes (50/group) evaluated over 24 weeks. Study design, conduct and methodology are presented here along with subjects’ disposition, characteristics, compliance and safety results. This design and methodology, evaluating generally healthy adult smokers over a relatively short duration, proved feasible. Findings from this randomized study provide generalized knowledge of the risk continuum among various tobacco products (ClinicalTrials.gov Identifier: NCT02061917). PMID:26525849

  10. Plasma membranes as heat stress sensors: from lipid-controlled molecular switches to therapeutic applications.

    PubMed

    Török, Zsolt; Crul, Tim; Maresca, Bruno; Schütz, Gerhard J; Viana, Felix; Dindia, Laura; Piotto, Stefano; Brameshuber, Mario; Balogh, Gábor; Péter, Mária; Porta, Amalia; Trapani, Alfonso; Gombos, Imre; Glatz, Attila; Gungor, Burcin; Peksel, Begüm; Vigh, László; Csoboz, Bálint; Horváth, Ibolya; Vijayan, Mathilakath M; Hooper, Phillip L; Harwood, John L; Vigh, László

    2014-06-01

    The classic heat shock (stress) response (HSR) was originally attributed to protein denaturation. However, heat shock protein (Hsp) induction occurs in many circumstances where no protein denaturation is observed. Recently considerable evidence has been accumulated to the favor of the "Membrane Sensor Hypothesis" which predicts that the level of Hsps can be changed as a result of alterations to the plasma membrane. This is especially pertinent to mild heat shock, such as occurs in fever. In this condition the sensitivity of many transient receptor potential (TRP) channels is particularly notable. Small temperature stresses can modulate TRP gating significantly and this is influenced by lipids. In addition, stress hormones often modify plasma membrane structure and function and thus initiate a cascade of events, which may affect HSR. The major transactivator heat shock factor-1 integrates the signals originating from the plasma membrane and orchestrates the expression of individual heat shock genes. We describe how these observations can be tested at the molecular level, for example, with the use of membrane perturbers and through computational calculations. An important fact which now starts to be addressed is that membranes are not homogeneous nor do all cells react identically. Lipidomics and cell profiling are beginning to address the above two points. Finally, we observe that a deregulated HSR is found in a large number of important diseases where more detailed knowledge of the molecular mechanisms involved may offer timely opportunities for clinical interventions and new, innovative drug treatments. This article is part of a Special Issue entitled: Membrane Structure and Function: Relevance in the Cell's Physiology, Pathology and Therapy.

  11. Giant tunneling magnetoresistance in silicene

    NASA Astrophysics Data System (ADS)

    Wang, Yu; Lou, Yiyi

    2013-11-01

    We have theoretically studied ballistic electron transport in silicene under the manipulation of a pair of ferromagnetic gate. Transport properties like transmission and conductance have been calculated by the standard transfer matrix method for parallel and antiparallel magnetization configurations. It is demonstrated here that, due to the stray field-induced wave-vector filtering effect, remarkable difference in configuration-dependent transport gives rise to a giant tunneling magnetoresistance. In combination with the peculiar buckled structure of silicene and its electric tunable energy gap, the receiving magnetoresistance can be efficiently modulated by the externally-tunable stray field, electrostatic potential, and staggered sublattice potential, providing some flexible strategies to construct silicene-based nanoelectronic device.

  12. Giant tunneling magnetoresistance in silicene

    SciTech Connect

    Wang, Yu; Lou, Yiyi

    2013-11-14

    We have theoretically studied ballistic electron transport in silicene under the manipulation of a pair of ferromagnetic gate. Transport properties like transmission and conductance have been calculated by the standard transfer matrix method for parallel and antiparallel magnetization configurations. It is demonstrated here that, due to the stray field-induced wave-vector filtering effect, remarkable difference in configuration-dependent transport gives rise to a giant tunneling magnetoresistance. In combination with the peculiar buckled structure of silicene and its electric tunable energy gap, the receiving magnetoresistance can be efficiently modulated by the externally-tunable stray field, electrostatic potential, and staggered sublattice potential, providing some flexible strategies to construct silicene-based nanoelectronic device.

  13. Magnetoresistance behavior of UNiGe

    SciTech Connect

    Nakotte, H.; Lacerda, A.; Purwanto, A.; Havela, L.; Sechovsky, V.; Prokes, K.; Brueck, E.; Boer, F.R. de; Torikachvili, M.S.

    1995-05-01

    The authors have measured the temperature dependences of the magnetoresistance of single-crystalline UNiGe for both parallel (i//B//c-axis) and perpendicular configurations (i//a-axis, B//c-axis) in magnetic fields up to 18 T. Both configurations yield similar magnetoresistance behavior, which emphasizes the strong magnetic contribution to the resistivity in all directions. Crossing magnetic-phase boundaries causes anomalies in the magnetoresistance, which allowed a completion of the previously proposed magnetic phase diagram.

  14. Heat-Treatment-Induced Switching of Magnetic States in the Doped Polar Semiconductor Ge1‑xMnxTe

    NASA Astrophysics Data System (ADS)

    Kriener, M.; Nakajima, T.; Kaneko, Y.; Kikkawa, A.; Yu, X. Z.; Endo, N.; Kato, K.; Takata, M.; Arima, T.; Tokura, Y.; Taguchi, Y.

    2016-05-01

    Cross-control of a material property - manipulation of a physical quantity (e.g., magnetisation) by a nonconjugate field (e.g., electrical field) – is a challenge in fundamental science and also important for technological device applications. It has been demonstrated that magnetic properties can be controlled by electrical and optical stimuli in various magnets. Here we find that heat-treatment allows the control over two competing magnetic phases in the Mn-doped polar semiconductor GeTe. The onset temperatures Tc of ferromagnetism vary at low Mn concentrations by a factor of five to six with a maximum Tc ≈ 180 K, depending on the selected phase. Analyses in terms of synchrotron x-ray diffraction and energy dispersive x-ray spectroscopy indicate a possible segregation of the Mn ions, which is responsible for the high-Tc phase. More importantly, we demonstrate that the two states can be switched back and forth repeatedly from either phase by changing the heat-treatment of a sample, thereby confirming magnetic phase-change-memory functionality.

  15. Heat-Treatment-Induced Switching of Magnetic States in the Doped Polar Semiconductor Ge1-xMnxTe.

    PubMed

    Kriener, M; Nakajima, T; Kaneko, Y; Kikkawa, A; Yu, X Z; Endo, N; Kato, K; Takata, M; Arima, T; Tokura, Y; Taguchi, Y

    2016-01-01

    Cross-control of a material property - manipulation of a physical quantity (e.g., magnetisation) by a nonconjugate field (e.g., electrical field) - is a challenge in fundamental science and also important for technological device applications. It has been demonstrated that magnetic properties can be controlled by electrical and optical stimuli in various magnets. Here we find that heat-treatment allows the control over two competing magnetic phases in the Mn-doped polar semiconductor GeTe. The onset temperatures Tc of ferromagnetism vary at low Mn concentrations by a factor of five to six with a maximum Tc ≈ 180 K, depending on the selected phase. Analyses in terms of synchrotron x-ray diffraction and energy dispersive x-ray spectroscopy indicate a possible segregation of the Mn ions, which is responsible for the high-Tc phase. More importantly, we demonstrate that the two states can be switched back and forth repeatedly from either phase by changing the heat-treatment of a sample, thereby confirming magnetic phase-change-memory functionality. PMID:27160657

  16. Heat-Treatment-Induced Switching of Magnetic States in the Doped Polar Semiconductor Ge1−xMnxTe

    PubMed Central

    Kriener, M.; Nakajima, T.; Kaneko, Y.; Kikkawa, A.; Yu, X. Z.; Endo, N.; Kato, K.; Takata, M.; Arima, T.; Tokura, Y.; Taguchi, Y.

    2016-01-01

    Cross-control of a material property - manipulation of a physical quantity (e.g., magnetisation) by a nonconjugate field (e.g., electrical field) – is a challenge in fundamental science and also important for technological device applications. It has been demonstrated that magnetic properties can be controlled by electrical and optical stimuli in various magnets. Here we find that heat-treatment allows the control over two competing magnetic phases in the Mn-doped polar semiconductor GeTe. The onset temperatures Tc of ferromagnetism vary at low Mn concentrations by a factor of five to six with a maximum Tc ≈ 180 K, depending on the selected phase. Analyses in terms of synchrotron x-ray diffraction and energy dispersive x-ray spectroscopy indicate a possible segregation of the Mn ions, which is responsible for the high-Tc phase. More importantly, we demonstrate that the two states can be switched back and forth repeatedly from either phase by changing the heat-treatment of a sample, thereby confirming magnetic phase-change-memory functionality. PMID:27160657

  17. Surface plasmon enhanced heating of gold nanoparticles: A plasmonic optical switch

    NASA Astrophysics Data System (ADS)

    Evans, Philip G.

    Recent work by Lereu et al. (Appl. Phys. Lett. Vol. 86, 154101, 2005) demonstrates a method of all-optical transfer of modulation signals using surface plasmon excitation on thin gold films. Localized heating of the film, resulting from surface plasmon decay, alter the optical properties of the device. A similar optical modulation method is now presented using gold nanoparticles. Computational models are used to generate realistic values of the thermo-optical response of gold and the thermal dynamics of a hot nanoparticle-substrate device. Differential pump-probe reflectivity measurements were perferomed and demonstrate modulation frequencies of upto 10kHz, an improvement of two orders of magnitude over the thin-film device. Sample fabrication techniques using physical vapor deposition and interference lithography, and heat transport on the nanoscale are also discussed.

  18. Extraordinary magnetoresistance: sensing the future

    NASA Astrophysics Data System (ADS)

    Hewett, Thomas H.; Kusmartsev, Feodor V.

    2012-06-01

    Simulations utilising the finite element method (FEM) have been produced in order to investigate aspects of circular extraordinary magnetoresistance (EMR) devices. The effect of three specific features on the resultant magnetoresistance were investigated: the ratio of the metallic to semiconducting conductivities ( σ M / σ S ); the semiconductor mobility; and the introduction of an intermediate region at the semiconductormetal interface in order to simulate a contact resistance. In order to obtain a large EMR effect the conductivity ratio ( σ M / σ S ) is required to be larger than two orders of magnitude; below this critical value the resultant magnetoresistance effect is dramatically reduced. Large mobility semiconductors exhibit larger EMR values for a given field (below saturation) and reduce the magnetic field required to produce saturation of the magnetoresistance. This is due to a larger Hall angle produced at a given magnetic field and is consistent with the mechanism of the EMR effect. Since practical magnetic field sensors are required to operate at low magnetic fields, high mobility semiconductors are required in the production of more sensitive EMR sensors. The formation of a Schottky barrier at the semiconductor-metal interface has been modelled with the introduction of a contact resistance at the semiconductor-metal interface. Increasing values of contact resistance are found to reduce the EMR effect with it disappearing altogether for large values. This has been shown explicitly by looking at the current flow in the system and is consistent with the mechanism of the EMR effect. The interface resistance was used to fit the simulated model to existing experimental data. The best fit occurred with an interface with resistivity of 1.55×10-4 m (overestimate). The EMR effect holds great potential with regard to its future application to magnetic field sensors. The design of any such devices should incorporate high mobility materials (such as graphene

  19. Extraordinary magnetoresistance: sensing the future

    NASA Astrophysics Data System (ADS)

    Hewett, Thomas; Kusmartsev, Feodor

    2012-06-01

    Simulations utilising the finite element method (FEM) have been produced in order to investigate aspects of circular extraordinary magnetoresistance (EMR) devices. The effect of three specific features on the resultant magnetoresistance were investigated: the ratio of the metallic to semiconducting conductivities (σ M/σ S); the semiconductor mobility; and the introduction of an intermediate region at the semiconductormetal interface in order to simulate a contact resistance. In order to obtain a large EMR effect the conductivity ratio (σ M/σ S) is required to be larger than two orders of magnitude; below this critical value the resultant magnetoresistance effect is dramatically reduced. Large mobility semiconductors exhibit larger EMR values for a given field (below saturation) and reduce the magnetic field required to produce saturation of the magnetoresistance. This is due to a larger Hall angle produced at a given magnetic field and is consistent with the mechanism of the EMR effect. Since practical magnetic field sensors are required to operate at low magnetic fields, high mobility semiconductors are required in the production of more sensitive EMR sensors. The formation of a Schottky barrier at the semiconductor-metal interface has been modelled with the introduction of a contact resistance at the semiconductor-metal interface. Increasing values of contact resistance are found to reduce the EMR effect with it disappearing altogether for large values. This has been shown explicitly by looking at the current flow in the system and is consistent with the mechanism of the EMR effect. The interface resistance was used to fit the simulated model to existing experimental data. The best fit occurred with an interface with resistivity of 1.55×10-4 m (overestimate). The EMR effect holds great potential with regard to its future application to magnetic field sensors. The design of any such devices should incorporate high mobility materials (such as graphene) along

  20. Large linear magnetoresistance in a transition-metal stannide β-RhSn4

    NASA Astrophysics Data System (ADS)

    Xing, X. Z.; Xu, C. Q.; Zhou, N.; Li, B.; Zhang, Jinglei; Shi, Z. X.; Xu, Xiaofeng

    2016-09-01

    Materials exhibiting large magnetoresistance may not only be of fundamental research interest, but also can lead to wide-ranging applications in magnetic sensors and switches. Here we demonstrate a large linear-in-field magnetoresistance, Δρ/ρ reaching as high as ˜600% at 2 K under a 9 T field, in the tetragonal phase of a transition-metal stannide β-RhSn4. Detailed analyses show that its magnetic responses are overall inconsistent with the classical model based on the multiple electron scattering by mobility fluctuations in an inhomogenous conductor, but rather in line with the quantum effects due to the presence of Dirac-like dispersions in the electronic structure. Our results may help guiding the future quest for quantum magnetoresistive materials into the family of stannides, similar to the role played by PtSn4 with topological node arcs.

  1. Anisotropic Magnetoresistance State Space of Permalloy Nanowires with Domain Wall Pinning Geometry

    PubMed Central

    Corte-León, Héctor; Nabaei, Vahid; Manzin, Alessandra; Fletcher, Jonathan; Krzysteczko, Patryk; Schumacher, Hans W.; Kazakova, Olga

    2014-01-01

    The domain wall-related change in the anisotropic magnetoresistance in L-shaped permalloy nanowires is measured as a function of the magnitude and orientation of the applied magnetic field. The magnetoresistance curves, compiled into so-called domain wall magnetoresistance state space maps, are used to identify highly reproducible transitions between domain states. Magnetic force microscopy and micromagnetic modelling are correlated with the transport measurements of the devices in order to identify different magnetization states. Analysis allows to determine the optimal working parameters for specific devices, such as the minimal field required to switch magnetization or the most appropriate angle for maximal separation of the pinning/depinning fields. Moreover, the complete state space maps can be used to predict evolution of nanodevices in magnetic field without a need of additional electrical measurements and for repayable initialization of magnetic sensors into a well-specified state. PMID:25116470

  2. Optofluidic guiding, valving, switching and mixing based on plasmonic heating in a random gold nanoisland substrate.

    PubMed

    Chen, Jiajie; Kang, Zhiwen; Wang, Guanghui; Loo, Jacky Fong Chuen; Kong, Siu Kai; Ho, Ho-Pui

    2015-06-01

    We present a versatile optofluidic flow manipulation scheme based on plasmonic heating in a random gold nanoisland substrate (Au-NIS). With its highly efficient conversion of optical power to hydrodynamic actuation, the reported substrate is used for laser-controlled optofluidic manipulation. It is the first time that microfluidic flow guiding, valving, and mixing within the same functional substrate has been realised. Plasmonic heating provides power for guiding the sample flow inside a microfluidic channel at controlled speed and transport of small particles or living cells is demonstrated. We have also made a laser-actuated microfluidic valve through controlling the surface wettability of the sample/Au-NIS interface. When the laser power density is sufficiently high to generate a bubble, localized convection around the bubble can lead to efficient sample mixing within a microfluidic chamber. The reported Au-NIS scheme practically offers a programmable functional surface on which users have the freedom to control the wetting characteristics with a focused laser beam. We have verified that this optofluidic approach induces insignificant degradation in cell viability. The reported scheme therefore offers a wide range of application possibilities in microfluidics and biomedical engineering, particularly those operated under a low Reynolds number. PMID:25963226

  3. Amplification effect of low-field magnetoresistance in silicon dual p - n junctions

    NASA Astrophysics Data System (ADS)

    Yang, Dezheng; Wang, Tao; Si, Mingsu; Wang, Fangcong; Zhou, Shiming; Xue, Desheng

    Nonmagnetic semiconductors with large magnetoresistance are identified as promising feature for the development of magnetoelectronics. However, to manipulate the magnetoresistance require the magnetic field of several Tesla. In this work, we realized an amplification effect of low-field magnetoresistance based on an elementary electronic building block: dual p - n junction. Analogous to the electrical amplification effect of transistor p - n -p junction, where the coupling current between p - n and n - p junctions is tuned by base current, in a silicon p + - n - n + device we demonstrate that the coupling strength of p + - n and n - n + junctions can be tuned by magnetic field. Owing to the amplification effect of magnetic-field-manipulated coupling, at a small magnetic field from 0 to 0.1 T the device is directly switched from conducting state ''on'' (10000 ohms) to blocking state ''off'' (5 megohm), yielding an magnetoresistance of 50,000 per cent and magnetic field sensitivity as high as 50 per cent Oe-1. Such a combination of magnetoresistance and high sensitivity not only makes the semiconductor device available in the magnetic field sensing industry, but also permits a new kind of magnetic-field-manipulated semiconductor electronics.

  4. Metal-insulator transition upon heating and negative-differential-resistive-switching induced by self-heating in BaCo{sub 0.9}Ni{sub 0.1}S{sub 1.8}

    SciTech Connect

    Fisher, B.; Genossar, J.; Chashka, K. B.; Patlagan, L.; Reisner, G. M.

    2014-04-14

    The layered compound BaCo{sub 1−x}Ni{sub x}S{sub 2−y} (0.05 < x < 0.2 and 0.05 < y < 0.2) exhibits an unusual first-order structural and electronic phase transition from a low-T monoclinic paramagnetic metal to a high-T tetragonal antiferromagnetic insulator around 200 K with huge hysteresis (∼40 K) and large volume change (∼0.01). Here, we report on unusual voltage-controlled resistive switching followed by current-controlled resistive switching induced by self-heating in polycrystalline BaCo{sub 1−x}Ni{sub x}S{sub 2−y} (nominal x = 0.1 and y = 0.2). These were due to the steep metal to insulator transition upon heating followed by the activated behavior of the resistivity above the transition. The major role of Joule heating in switching is supported by the absence of nonlinearity in the current as function of voltage, I(V), obtained in pulsed measurements, in the range of electric fields relevant to d.c. measurements. The voltage-controlled negative differential resistance around the threshold for switching was explained by a simple model of self-heating. The main difficulty in modeling I(V) from the samples resistance as function of temperature R(T) was the progressive increase of R(T), and to a lesser extend the decrease of the resistance jumps at the transitions, caused by the damage induced by cycling through the transitions by heating or self-heating. This was dealt with by following systematically R(T) over many cycles and by using the data of R(T) in the heating cycle closest to that of the self-heating one.

  5. Metal-insulator transition upon heating and negative-differential-resistive-switching induced by self-heating in BaCo0.9Ni0.1S1.8

    NASA Astrophysics Data System (ADS)

    Fisher, B.; Genossar, J.; Chashka, K. B.; Patlagan, L.; Reisner, G. M.

    2014-04-01

    The layered compound BaCo1-xNixS2-y (0.05 < x < 0.2 and 0.05 < y < 0.2) exhibits an unusual first-order structural and electronic phase transition from a low-T monoclinic paramagnetic metal to a high-T tetragonal antiferromagnetic insulator around 200 K with huge hysteresis (˜40 K) and large volume change (˜0.01). Here, we report on unusual voltage-controlled resistive switching followed by current-controlled resistive switching induced by self-heating in polycrystalline BaCo1-xNixS2-y (nominal x = 0.1 and y = 0.2). These were due to the steep metal to insulator transition upon heating followed by the activated behavior of the resistivity above the transition. The major role of Joule heating in switching is supported by the absence of nonlinearity in the current as function of voltage, I(V), obtained in pulsed measurements, in the range of electric fields relevant to d.c. measurements. The voltage-controlled negative differential resistance around the threshold for switching was explained by a simple model of self-heating. The main difficulty in modeling I(V) from the samples resistance as function of temperature R(T) was the progressive increase of R(T), and to a lesser extend the decrease of the resistance jumps at the transitions, caused by the damage induced by cycling through the transitions by heating or self-heating. This was dealt with by following systematically R(T) over many cycles and by using the data of R(T) in the heating cycle closest to that of the self-heating one.

  6. Rashba-Edelstein Magnetoresistance in Metallic Heterostructures

    NASA Astrophysics Data System (ADS)

    Nakayama, Hiroyasu; Kanno, Yusuke; An, Hongyu; Tashiro, Takaharu; Haku, Satoshi; Nomura, Akiyo; Ando, Kazuya

    2016-09-01

    We report the observation of magnetoresistance originating from Rashba spin-orbit coupling (SOC) in a metallic heterostructure: the Rashba-Edelstein (RE) magnetoresistance. We show that the simultaneous action of the direct and inverse RE effects in a Bi /Ag /CoFeB trilayer couples current-induced spin accumulation to the electric resistance. The electric resistance changes with the magnetic-field angle, reminiscent of the spin Hall magnetoresistance, despite the fact that bulk SOC is not responsible for the magnetoresistance. We further found that, even when the magnetization is saturated, the resistance increases with increasing the magnetic-field strength, which is attributed to the Hanle magnetoresistance in this system.

  7. Rashba-Edelstein Magnetoresistance in Metallic Heterostructures.

    PubMed

    Nakayama, Hiroyasu; Kanno, Yusuke; An, Hongyu; Tashiro, Takaharu; Haku, Satoshi; Nomura, Akiyo; Ando, Kazuya

    2016-09-01

    We report the observation of magnetoresistance originating from Rashba spin-orbit coupling (SOC) in a metallic heterostructure: the Rashba-Edelstein (RE) magnetoresistance. We show that the simultaneous action of the direct and inverse RE effects in a Bi/Ag/CoFeB trilayer couples current-induced spin accumulation to the electric resistance. The electric resistance changes with the magnetic-field angle, reminiscent of the spin Hall magnetoresistance, despite the fact that bulk SOC is not responsible for the magnetoresistance. We further found that, even when the magnetization is saturated, the resistance increases with increasing the magnetic-field strength, which is attributed to the Hanle magnetoresistance in this system. PMID:27661708

  8. Hall magnetoresistivity response under microwave excitation revisited

    SciTech Connect

    Inarrea, Jesus

    2007-04-23

    The authors theoretically analyzed the microwave-induced modification of the Hall magnetoresistivity in high mobility two-dimensional electron systems. These systems present diagonal magnetoresistivity oscillations and zero-resistance states when subjected to microwave radiation. The most surprising modification of the Hall magnetoresistivity is a periodic reduction which correlates with a periodic increase in the diagonal resistivity. The authors present a model that explains the experimental results considering that radiation affects directly only the diagonal resistivity and that the observed Hall resistivity changes come from the tensor relationship between them.

  9. Spin Hall magnetoresistance in a canted ferrimagnet

    NASA Astrophysics Data System (ADS)

    Ganzhorn, Kathrin; Barker, Joseph; Schlitz, Richard; Piot, Benjamin A.; Ollefs, Katharina; Guillou, Francois; Wilhelm, Fabrice; Rogalev, Andrei; Opel, Matthias; Althammer, Matthias; Geprägs, Stephan; Huebl, Hans; Gross, Rudolf; Bauer, Gerrit E. W.; Goennenwein, Sebastian T. B.

    2016-09-01

    We study the spin Hall magnetoresistance effect in ferrimagnet/normal metal bilayers, comparing the response in collinear and canted magnetic phases. In the collinear magnetic phase, in which the sublattice magnetic moments are all aligned along the same axis, we observe the conventional spin Hall magnetoresistance. In contrast, in the canted phase, the magnetoresistance changes sign. Using atomistic spin simulations and x-ray absorption experiments, we can understand these observations in terms of the magnetic field and temperature dependent orientation of magnetic moments on different magnetic sublattices. This enables a magnetotransport based investigation of noncollinear magnetic textures.

  10. Evaluation of Biomarkers of Exposure in Smokers Switching to a Carbon-Heated Tobacco Product: A Controlled, Randomized, Open-Label 5-Day Exposure Study

    PubMed Central

    Haziza, Christelle; Weitkunat, Rolf; Magnette, John

    2016-01-01

    Introduction: Tobacco harm reduction aims to provide reduced risk alternatives to adult smokers who would otherwise continue smoking combustible cigarettes (CCs). This randomized, open-label, three-arm, parallel-group, single-center, short-term confinement study aimed to investigate the effects of exposure to selected harmful and potentially harmful constituents (HPHCs) of cigarette smoke in adult smokers who switched to a carbon-heated tobacco product (CHTP) compared with adult smokers who continued to smoke CCs and those who abstained from smoking for 5 days. Methods: Biomarkers of exposure to HPHCs, including nicotine and urinary excretion of mutagenic material, were measured in 24-hour urine and blood samples in 112 male and female Caucasian smokers switching from CCs to the CHTP ad libitum use. Puffing topography was assessed during product use. Results: Switching to the CHTP or smoking abstinence (SA) resulted in marked decreases from baseline to Day 5 in all biomarkers of exposure measured, including carboxyhemoglobin (43% and 55% decrease in the CHTP and SA groups, respectively). The urinary excretion of mutagenic material was also markedly decreased on Day 5 compared with baseline (89% and 87% decrease in the CHTP and SA groups, respectively). No changes in biomarkers of exposure to HPHCs or urinary mutagenic material were observed between baseline and Day 5 in the CC group. Conclusions: Our results provide clear evidence supporting a reduction in the level of exposure to HPHCs of tobacco smoke in smokers who switch to CHTP under controlled conditions, similar to that observed in SA. Implications: The reductions observed in biomarkers of exposure to HPHCs of tobacco smoke in this short-term study could potentially also reduce the incidence of cancer, cardiovascular and respiratory diseases in those smokers who switch to a heated tobacco product. PMID:26817490

  11. Tunneling magnetoresistance of silicon chains

    NASA Astrophysics Data System (ADS)

    Matsuura, Yukihito

    2016-05-01

    The tunneling magnetoresistance (TMR) of a silicon chain sandwiched between nickel electrodes was examined by using first-principles density functional theory. The relative orientation of the magnetization in a parallel-alignment (PA) configuration of two nickel electrodes enhanced the current with a bias less than 0.4 V compared with that in an antiparallel-alignment configuration. Consequently, the silicon chain-nickel electrodes yielded good TMR characteristics. In addition, there was polarized spin current in the PA configuration. The spin polarization of sulfur atoms functioning as a linking bridge between the chain and nickel electrode played an important role in the magnetic effects of the electric current. Moreover, the hybridization of the sulfur 3p orbital and σ-conjugated silicon 3p orbital contributed to increasing the total current.

  12. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions.

    PubMed

    Zhang, Kun; Li, Huan-Huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-Tao; Tian, Yu-Feng; Yan, Shi-Shen; Lin, Zhao-Jun; Kang, Shi-Shou; Chen, Yan-Xue; Liu, Guo-Lei; Mei, Liang-Mo

    2015-09-21

    Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.

  13. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions

    NASA Astrophysics Data System (ADS)

    Zhang, Kun; Li, Huan-Huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-Tao; Tian, Yu-Feng; Yan, Shi-Shen; Lin, Zhao-Jun; Kang, Shi-Shou; Chen, Yan-Xue; Liu, Guo-Lei; Mei, Liang-Mo

    2015-09-01

    Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.

  14. Giant magnetoresistance through a single molecule.

    PubMed

    Schmaus, Stefan; Bagrets, Alexei; Nahas, Yasmine; Yamada, Toyo K; Bork, Annika; Bowen, Martin; Beaurepaire, Eric; Evers, Ferdinand; Wulfhekel, Wulf

    2011-03-01

    Magnetoresistance is a change in the resistance of a material system caused by an applied magnetic field. Giant magnetoresistance occurs in structures containing ferromagnetic contacts separated by a metallic non-magnetic spacer, and is now the basis of read heads for hard drives and for new forms of random access memory. Using an insulator (for example, a molecular thin film) rather than a metal as the spacer gives rise to tunnelling magnetoresistance, which typically produces a larger change in resistance for a given magnetic field strength, but also yields higher resistances, which are a disadvantage for real device operation. Here, we demonstrate giant magnetoresistance across a single, non-magnetic hydrogen phthalocyanine molecule contacted by the ferromagnetic tip of a scanning tunnelling microscope. We measure the magnetoresistance to be 60% and the conductance to be 0.26G(0), where G(0) is the quantum of conductance. Theoretical analysis identifies spin-dependent hybridization of molecular and electrode orbitals as the cause of the large magnetoresistance. PMID:21336269

  15. Magnetoresistance from quantum interference effects in ferromagnets

    PubMed

    Manyala; Sidis; DiTusa; Aeppli; Young; Fisk

    2000-04-01

    The desire to maximize the sensitivity of read/write heads (and thus the information density) of magnetic storage devices has stimulated interest in the discovery and design of new magnetic materials exhibiting magnetoresistance. Recent discoveries include the 'colossal' magnetoresistance in the manganites and the enhanced magnetoresistance in low-carrier-density ferromagnets. An important feature of these systems is that the electrons involved in electrical conduction are different from those responsible for the magnetism. The latter are localized and act as scattering sites for the mobile electrons, and it is the field tuning of the scattering strength that ultimately gives rise to the observed magnetoresistance. Here we argue that magnetoresistance can arise by a different mechanism in certain ferromagnets--quantum interference effects rather than simple scattering. The ferromagnets in question are disordered, low-carrier-density magnets where the same electrons are responsible for both the magnetic properties and electrical conduction. The resulting magnetoresistance is positive (that is, the resistance increases in response to an applied magnetic field) and only weakly temperature-dependent below the Curie point.

  16. Impurity-assisted tunneling magnetoresistance under a weak magnetic field.

    PubMed

    Txoperena, Oihana; Song, Yang; Qing, Lan; Gobbi, Marco; Hueso, Luis E; Dery, Hanan; Casanova, Fèlix

    2014-10-01

    Injection of spins into semiconductors is essential for the integration of the spin functionality into conventional electronics. Insulating layers are often inserted between ferromagnetic metals and semiconductors for obtaining an efficient spin injection, and it is therefore crucial to distinguish between signatures of electrical spin injection and impurity-driven effects in the tunnel barrier. Here we demonstrate an impurity-assisted tunneling magnetoresistance effect in nonmagnetic-insulator-nonmagnetic and ferromagnetic-insulator-nonmagnetic tunnel barriers. In both cases, the effect reflects on-off switching of the tunneling current through impurity channels by the external magnetic field. The reported effect is universal for any impurity-assisted tunneling process and provides an alternative interpretation to a widely used technique that employs the same ferromagnetic electrode to inject and detect spin accumulation. PMID:25325651

  17. Reflective HTS switch

    DOEpatents

    Martens, Jon S.; Hietala, Vincent M.; Hohenwarter, Gert K. G.

    1994-01-01

    A HTS switch includes a HTS conductor for providing a superconducting path for an electrical signal and an serpentine wire actuator for controllably heating a portion of the conductor sufficiently to cause that portion to have normal, and not superconducting, resistivity. Mass of the portion is reduced to decrease switching time.

  18. Reflective HTS switch

    DOEpatents

    Martens, J.S.; Hietala, V.M.; Hohenwarter, G.K.G.

    1994-09-27

    A HTS (High Temperature Superconductor) switch includes a HTS conductor for providing a superconducting path for an electrical signal and an serpentine wire actuator for controllably heating a portion of the conductor sufficiently to cause that portion to have normal, and not superconducting, resistivity. Mass of the portion is reduced to decrease switching time. 6 figs.

  19. Tunneling magnetoresistive heads for magnetic data storage.

    PubMed

    Mao, Sining

    2007-01-01

    Spintronics is emerging to be a new form of nanotechnologies, which utilizes not only the charge but also spin degree of freedom of electrons. Spin-dependent tunneling transport is one of the many kinds of physical phenomena involving spintronics, which has already found industrial applications. In this paper, we first provide a brief review on the basic physics and materials for magnetic tunnel junctions, followed more importantly by a detailed coverage on the application of magnetic tunneling devices in magnetic data storage. The use of tunneling magnetoresistive reading heads has helped to maintain a fast growth of areal density, which is one of the key advantages of hard disk drives as compared to solid-state memories. This review is focused on the first commercial tunneling magnetoresistive heads in the industry at an areal density of 80 approximately 100 Gbit/in2 for both laptop and desktop Seagate hard disk drive products using longitudinal media. The first generation tunneling magnetoresistive products utilized a bottom stack of tunnel junctions and an abutted hard bias design. The output signal amplitude of these heads was 3 times larger than that of comparable giant magnetoresistive devices, resulting in a 0.6 decade bit error rate gain over the latter. This has enabled high component and drive yields. Due to the improved thermal dissipation of vertical geometry, the tunneling magnetoresistive head runs cooler with a better lifetime performance, and has demonstrated similar electrical-static-discharge robustness as the giant magnetoresistive devices. It has also demonstrated equivalent or better process and wafer yields compared to the latter. The tunneling magnetoresistive heads are proven to be a mature and capable reader technology. Using the same head design in conjunction with perpendicular recording media, an areal density of 274 Gbit/in2 has been demonstrated, and advanced tunneling magnetoresistive heads can reach 311 Gbit/in2. Today, the

  20. Reusable fast opening switch

    DOEpatents

    Van Devender, John P.; Emin, David

    1986-01-01

    A reusable fast opening switch for transferring energy, in the form of a high power pulse, from an electromagnetic storage device such as an inductor into a load. The switch is efficient, compact, fast and reusable. The switch comprises a ferromagnetic semiconductor which undergoes a fast transition between conductive and insulating states at a critical temperature and which undergoes the transition without a phase change in its crystal structure. A semiconductor such as europium rich europhous oxide, which undergoes a conductor to insulator transition when it is joule heated from its conductor state, can be used to form the switch.

  1. Reusable fast opening switch

    DOEpatents

    Van Devender, J.P.; Emin, D.

    1983-12-21

    A reusable fast opening switch for transferring energy, in the form of a high power pulse, from an electromagnetic storage device such as an inductor into a load. The switch is efficient, compact, fast and reusable. The switch comprises a ferromagnetic semiconductor which undergoes a fast transition between conductive and metallic states at a critical temperature and which undergoes the transition without a phase change in its crystal structure. A semiconductor such as europium rich europhous oxide, which undergoes a conductor to insulator transition when it is joule heated from its conductor state, can be used to form the switch.

  2. Probing magnetization dynamics in individual magnetite nanocrystals using magnetoresistive scanning tunneling microscopy

    NASA Astrophysics Data System (ADS)

    Hevroni, Amir; Tsukerman, Boris; Markovich, Gil

    2015-12-01

    The magnetization dynamics of individual magnetite nanocrystals was probed by variable-temperature magnetoresistive scanning tunneling microscopy, in which a magnetoresistive junction is formed between the substrate and the magnetic particle under study. By tuning the temperature close to the magnetization blocking of a superparamagnetic particle, the slow magnetization switching of the particle caused fluctuations in the tunnel current passing through the particle, which appeared as telegraph noise in current vs time measurements. Analysis of the current fluctuations yielded estimates for the low local magnetic field sensed by the particle, its magnetic anisotropy energy, and the low limit for the spin-polarization degree of the nanocrystals, which for some particles appeared to be as high as 90%.

  3. Anisotropic magnetoresistance in an antiferromagnetic semiconductor.

    PubMed

    Fina, I; Marti, X; Yi, D; Liu, J; Chu, J H; Rayan-Serrao, C; Suresha, S; Shick, A B; Zelezný, J; Jungwirth, T; Fontcuberta, J; Ramesh, R

    2014-01-01

    Recent studies in devices comprising metal antiferromagnets have demonstrated the feasibility of a novel spintronic concept in which spin-dependent phenomena are governed by an antiferromagnet instead of a ferromagnet. Here we report experimental observation of the anisotropic magnetoresistance in an antiferromagnetic semiconductor Sr2IrO4. Based on ab initio calculations, we associate the origin of the phenomenon with large anisotropies in the relativistic electronic structure. The antiferromagnet film is exchange coupled to a ferromagnet, which allows us to reorient the antiferromagnet spin-axis in applied magnetic fields via the exchange spring effect. We demonstrate that the semiconducting nature of our AFM electrode allows us to perform anisotropic magnetoresistance measurements in the current-perpendicular-to-plane geometry without introducing a tunnel barrier into the stack. Temperature-dependent measurements of the resistance and anisotropic magnetoresistance highlight the large, entangled tunabilities of the ordinary charge and spin-dependent transport in a spintronic device utilizing the antiferromagnet semiconductor.

  4. Spin Hall magnetoresistance at high temperatures

    SciTech Connect

    Uchida, Ken-ichi; Qiu, Zhiyong; Kikkawa, Takashi; Iguchi, Ryo; Saitoh, Eiji

    2015-02-02

    The temperature dependence of spin Hall magnetoresistance (SMR) in Pt/Y{sub 3}Fe{sub 5}O{sub 12} (YIG) bilayer films has been investigated in a high temperature range from room temperature to near the Curie temperature of YIG. The experimental results show that the magnitude of the magnetoresistance ratio induced by the SMR monotonically decreases with increasing the temperature and almost disappears near the Curie temperature. We found that, near the Curie temperature, the temperature dependence of the SMR in the Pt/YIG film is steeper than that of a magnetization curve of the YIG; the critical exponent of the magnetoresistance ratio is estimated to be 0.9. This critical behavior of the SMR is attributed mainly to the temperature dependence of the spin-mixing conductance at the Pt/YIG interface.

  5. Scanning magnetoresistive microscopy: An advanced characterization tool for magnetic nanosystems

    NASA Astrophysics Data System (ADS)

    Mitin, D.; Grobis, M.; Albrecht, M.

    2016-02-01

    An advanced scanning magnetoresistive microscopy (SMRM) — a robust magnetic imaging and probing technique — will be presented, which utilizes state-of-the-art recording heads of a hard disk drive as sensors. The spatial resolution of modern tunneling magnetoresistive sensors is nowadays comparable to the more commonly used magnetic force microscopes. Important advantages of SMRM are the ability to detect pure magnetic signals directly proportional to the out-of-plane magnetic stray field, negligible sensor stray fields, and the ability to apply local bipolar magnetic field pulses up to 10 kOe with bandwidths from DC up to 1 GHz. Moreover, the SMRM can be further equipped with a heating stage and external magnetic field units. The performance of this method and corresponding best practices are demonstrated by presenting various examples, including a temperature dependent recording study on hard magnetic L10 FeCuPt thin films, imaging of magnetic vortex states in an in-plane magnetic field, and their controlled manipulation by applying local field pulses.

  6. Large magnetoresistance in the antiferromagnetic semimetal NdSb

    NASA Astrophysics Data System (ADS)

    Wakeham, N.; Bauer, E. D.; Neupane, M.; Ronning, F.

    2016-05-01

    There has been considerable interest in topological semimetals that exhibit extreme magnetoresistance (XMR). These have included materials lacking inversion symmetry such as TaAs, as well Dirac semimetals such as Cd3As2 . However, it was reported recently that LaSb and LaBi also exhibit XMR, even though the rocksalt structure of these materials has inversion symmetry, and the band-structure calculations do not show a Dirac dispersion in the bulk. Here, we present magnetoresistance and specific-heat measurements on NdSb, which is isostructural with LaSb. NdSb has an antiferromagnetic ground state and, in analogy with the lanthanum monopnictides, is expected to be a topologically nontrivial semimetal. We show that NdSb has an XMR of ˜104% , even within the antiferromagnetic state, illustrating that XMR can occur independently of the absence of time-reversal symmetry breaking in zero magnetic field. The persistence of XMR in a magnetic system offers the promise of new functionality when combining topological matter with electronic correlations. We also find that in an applied magnetic field below the Néel temperature there is a first-order transition, consistent with evidence from previous neutron scattering work.

  7. Scanning magnetoresistive microscopy: An advanced characterization tool for magnetic nanosystems.

    PubMed

    Mitin, D; Grobis, M; Albrecht, M

    2016-02-01

    An advanced scanning magnetoresistive microscopy (SMRM) - a robust magnetic imaging and probing technique - will be presented, which utilizes state-of-the-art recording heads of a hard disk drive as sensors. The spatial resolution of modern tunneling magnetoresistive sensors is nowadays comparable to the more commonly used magnetic force microscopes. Important advantages of SMRM are the ability to detect pure magnetic signals directly proportional to the out-of-plane magnetic stray field, negligible sensor stray fields, and the ability to apply local bipolar magnetic field pulses up to 10 kOe with bandwidths from DC up to 1 GHz. Moreover, the SMRM can be further equipped with a heating stage and external magnetic field units. The performance of this method and corresponding best practices are demonstrated by presenting various examples, including a temperature dependent recording study on hard magnetic L1(0) FeCuPt thin films, imaging of magnetic vortex states in an in-plane magnetic field, and their controlled manipulation by applying local field pulses. PMID:26931856

  8. Crossed Andreev reflection-induced magnetoresistance.

    PubMed

    Giazotto, Francesco; Taddei, Fabio; Beltram, Fabio; Fazio, Rosario

    2006-08-25

    We show that very large negative magnetoresistance can be obtained in magnetic trilayers in a current-in-plane geometry owing to the existence of crossed Andreev reflection. This spin valve consists of a thin superconducting film sandwiched between two ferromagnetic layers whose magnetization is allowed to be either parallelly or antiparallelly aligned. For a suitable choice of structure parameters and nearly fully spin-polarized ferromagnets, the magnetoresistance can exceed -80%. Our results are relevant for the design and implementation of spintronic devices exploiting ferromagnet-superconductor structures. PMID:17026324

  9. Monte Carlo calculations of the magnetoresistance in magnetic multilayer structures with giant magnetoresistance effects

    NASA Astrophysics Data System (ADS)

    Prudnikov, V. V.; Prudnikov, P. V.; Romanovskiy, D. E.

    2016-06-01

    A Monte Carlo study of trilayer and spin-valve magnetic structures with giant magnetoresistance effects is carried out. The anisotropic Heisenberg model is used for description of magnetic properties of ultrathin ferromagnetic films forming these structures. The temperature and magnetic field dependences of magnetic characteristics are considered for ferromagnetic and antiferromagnetic configurations of these multilayer structures. The methodology for determination of the magnetoresistance by the Monte Carlo method is introduced; this permits us to calculate the magnetoresistance of multilayer structures for different thicknesses of the ferromagnetic films. The calculated temperature dependence of the magnetoresistance agrees very well with the experimental results measured for the Fe(0 0 1)-Cr(0 0 1) multilayer structure and CFAS-Ag-CFAS-IrMn spin-valve structure based on the half-metallic Heusler alloy Co2FeAl0.5Si0.5.

  10. Large magnetoresistance in non-magnetic silver chalcogenides and new class of magnetoresistive compounds

    DOEpatents

    Saboungi, Marie-Louis; Price, David C. L.; Rosenbaum, Thomas F.; Xu, Rong; Husmann, Anke

    2001-01-01

    The heavily-doped silver chalcogenides, Ag.sub.2+.delta. Se and Ag.sub.2+.delta. Te, show magnetoresistance effects on a scale comparable to the "colossal" magnetoresistance (CMR) compounds. Hall coefficient, magnetoconductivity, and hydrostatic pressure experiments establish that elements of narrow-gap semiconductor physics apply, but both the size of the effects at room temperature and the linear field dependence down to fields of a few Oersteds are surprising new features.

  11. Data center coolant switch

    SciTech Connect

    Iyengar, Madhusudan K.; Parida, Pritish R.; Schultz, Mark D.

    2015-10-06

    A data center cooling system is operated in a first mode; it has an indoor portion wherein heat is absorbed from components in the data center, and an outdoor heat exchanger portion wherein outside air is used to cool a first heat transfer fluid (e.g., water) present in at least the outdoor heat exchanger portion of the cooling system during the first mode. The first heat transfer fluid is a relatively high performance heat transfer fluid (as compared to the second fluid), and has a first heat transfer fluid freezing point. A determination is made that an appropriate time has been reached to switch from the first mode to a second mode. Based on this determination, the outdoor heat exchanger portion of the data cooling system is switched to a second heat transfer fluid, which is a relatively low performance heat transfer fluid, as compared to the first heat transfer fluid. It has a second heat transfer fluid freezing point lower than the first heat transfer fluid freezing point, and the second heat transfer fluid freezing point is sufficiently low to operate without freezing when the outdoor air temperature drops below a first predetermined relationship with the first heat transfer fluid freezing point.

  12. K(+)-Responsive off-to-on switching of hammerhead ribozyme through dual G-quadruplex formation requiring no heating and cooling treatment.

    PubMed

    Yamaoki, Yudai; Nagata, Takashi; Mashima, Tsukasa; Katahira, Masato

    Functional RNAs that switch their activities in response to K(+) may sense the intracellular (100 mM) and extracellular (5 mM) K(+) concentrations and regulate their functions accordingly. Previously, we developed a quadruplex hammerhead ribozyme (QHR) whose conformational change, from a duplex to a G-quadruplex, triggered by K(+) results in expression of the activity. However, this QHR required heating and cooling treatment (annealing) to induce the K(+)-responsive conformational change and activity. Here, we developed a new quadruplex hammerhead ribozyme (QHR) system that does not require annealing to induce the K(+)-responsive conformational change and activity. This system is composed of QHR and a G-quadruplex-forming complementary DNA strand (QCS). In the absence of K(+), QCS formed a duplex with QHR, which suppressed the residual activity. Upon elevation of the K(+) concentration, QCS dissociated from QHR was trapped in a G-quadruplex, and then QHR could form a G-quadruplex and exerted the activity. The 11.6-fold higher activity was induced by K(+) with an EC50 value of 23 mM, but not by Na(+), which is desirable when the activity switching between the intra-/extracellular environment is aimed at. This is the first report of the activation of functional RNA through a 'dual G-quadruplex formation system'.

  13. Room temperature positive magnetoresistance via charge trapping in polyaniline-iron oxide nanoparticle composites

    NASA Astrophysics Data System (ADS)

    Lin, Aigu L.; Wu, Tom; Chen, Wei; Wee, Andrew T. S.

    2013-07-01

    We demonstrate a polyaniline-iron oxide nanoparticle (PANI-NP) organic hybrid composite device with room temperature positive magnetoresistance of 85.7%. Temperature dependent resistivity measurements attribute this observation to the decrease in localization length of the charge carriers in the presence of an external magnetic field which result in them being trapped within the device between the insulating PANI layer, hence allowing the device to maintain its resistive state even when the power is switched off, thus exhibiting a memory effect.

  14. Proximity effect induced magnetoresistance hysteresis loops in a topological insulator/YIG heterostructure

    NASA Astrophysics Data System (ADS)

    Montazeri, Mohammad; Lang, Murong; Onbasli, Mehmet C.; Kou, Xufeng; He, Liang; Ross, Caroline A.; Wang, Kang L.

    2014-03-01

    We experimentally demonstrate the proximity effect induced hysteretic magnetoresistance in an 8 quintuple layers of Bi2Se3 films grown on Gallium Gadolinium Garnet (GGG) (111) substrates with a 50 nm Yttrium Iron Garnet (YIG) buffer layer by molecular beam epitaxy. With in-plane and out-of-plane magnetic field, square wave shaped and butterfly shaped resistance hysteresis loops can be observed up to 25 K, respectively. The relationship between the hysteretic MR curves and the magnetic switching of the YIG will be discussed in the context of a proximity effect between the YIG and the TI.

  15. Magnetoresistance behavior of ferromagnetic nanorings in a ring-wire hybrid configuration.

    PubMed

    Jain, S; Wang, C C; Adeyeye, A O

    2008-02-27

    We present a technique for probing the magnetic configurations in ferromagnetic rings electrically without placing the electrical contact leads directly on the nanorings, but on wires attached to the ring structures. The magnetic configurations in pseudo spin valve rectangular and elliptical rings of width in the range from 60 to 300 nm have been systematically mapped using this technique. The giant magnetoresistance (GMR) responses for both the rings exhibit distinct switching fields and features corresponding to identifiable magnetization states in different segments of the nanostructures. PMID:21730723

  16. A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction.

    PubMed

    Park, B G; Wunderlich, J; Martí, X; Holý, V; Kurosaki, Y; Yamada, M; Yamamoto, H; Nishide, A; Hayakawa, J; Takahashi, H; Shick, A B; Jungwirth, T

    2011-05-01

    A spin valve is a microelectronic device in which high- and low-resistance states are realized by using both the charge and spin of carriers. Spin-valve structures used in modern hard-drive read heads and magnetic random access memoriescomprise two ferromagnetic electrodes whose relative magnetization orientations can be switched between parallel and antiparallel configurations, yielding the desired giant or tunnelling magnetoresistance effect. Here we demonstrate more than 100% spin-valve-like signal in a NiFe/IrMn/MgO/Pt stack with an antiferromagnet on one side and a non-magnetic metal on the other side of the tunnel barrier. Ferromagneticmoments in NiFe are reversed by external fields of approximately 50  mT or less, and the exchange-spring effect of NiFe on IrMn induces rotation of antiferromagnetic moments in IrMn, which is detected by the measured tunnelling anisotropic magnetoresistance. Our work demonstrates a spintronic element whose transport characteristics are governed by an antiferromagnet. It demonstrates that sensitivity to low magnetic fields can be combined with large, spin-orbit-coupling-induced magnetotransport anisotropy using a single magnetic electrode. The antiferromagnetic tunnelling anisotropic magnetoresistance provides a means to study magnetic characteristics of antiferromagnetic films by an electronic-transport measurement.

  17. A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction.

    PubMed

    Park, B G; Wunderlich, J; Martí, X; Holý, V; Kurosaki, Y; Yamada, M; Yamamoto, H; Nishide, A; Hayakawa, J; Takahashi, H; Shick, A B; Jungwirth, T

    2011-05-01

    A spin valve is a microelectronic device in which high- and low-resistance states are realized by using both the charge and spin of carriers. Spin-valve structures used in modern hard-drive read heads and magnetic random access memoriescomprise two ferromagnetic electrodes whose relative magnetization orientations can be switched between parallel and antiparallel configurations, yielding the desired giant or tunnelling magnetoresistance effect. Here we demonstrate more than 100% spin-valve-like signal in a NiFe/IrMn/MgO/Pt stack with an antiferromagnet on one side and a non-magnetic metal on the other side of the tunnel barrier. Ferromagneticmoments in NiFe are reversed by external fields of approximately 50  mT or less, and the exchange-spring effect of NiFe on IrMn induces rotation of antiferromagnetic moments in IrMn, which is detected by the measured tunnelling anisotropic magnetoresistance. Our work demonstrates a spintronic element whose transport characteristics are governed by an antiferromagnet. It demonstrates that sensitivity to low magnetic fields can be combined with large, spin-orbit-coupling-induced magnetotransport anisotropy using a single magnetic electrode. The antiferromagnetic tunnelling anisotropic magnetoresistance provides a means to study magnetic characteristics of antiferromagnetic films by an electronic-transport measurement. PMID:21399629

  18. Switching time in laser pulse heat-assisted magnetic recording using L1{sub 0}-FePt nanoparticles

    SciTech Connect

    Lyberatos, A.; Weller, D.; Parker, G. J.

    2015-04-07

    Atomistic spin model simulations using Langevin dynamics are performed to study the factors that determine the thermomagnetic recording time window in FePt media. The onset of thermomagnetic writing occurs at a temperature T{sub o} larger than the Curie temperature T{sub c} as a result of the finite time of relaxation of the magnetization by the linear reversal mode. The Bloch relaxation rate of magnetization growth during cooling below T{sub c} is independent on the write field, provided the field is stronger than some threshold value. Application of a strong write field reduces switching time through better spin alignment in the paramagnetic regime. Finite size effects on the probability distribution of freezing temperatures T{sub f} and the free energy provide insight on the thermomagnetic reversal mechanism. Constraints on the “pulse-mode” of recording when the head field reverses direction during cooling are also considered.

  19. Modifying magnetic switching in permalloy film nanostructures using the native oxide

    NASA Astrophysics Data System (ADS)

    Hojem, A.; Bassett, D.; Wesenberg, D.; Mason, S. J.; Avery, A. D.; Zink, B. L.

    2014-03-01

    Thin films of nickel-iron alloys of the nominal concentration near 80% Ni, are very commonly used in applications and in fundamental studies of spin, charge and heat transport in nanomagnetic systems. These permalloy (Py) films are straightforward to grow by various techniques and typically produce predictable, controllable and repeatable magnetic properties, including small coercivity, low magnetocrystalline anisotropy, and low magnetostriction. We have found that greater complexity can be added to the switching behavior of thin films of permalloy by oxidation of thin (~4 nm) layers followed by subsequent growth of Py. Under some circumstances, this can cause apparent negative coercivity in the switching observed in anisotropic magnetoresistance (AMR) of micromachined strips with an expected shape anisotropy. Here we will present results on growth and AMR measurements of the effects in various oxidized Py-Py layered samples. It is not yet clear if the effects are reproducible enough to be used for intentional manipulation of switching behavior in Py nanostructures. We acknowledge support from the NSF CAREER award (DMR-0847796).

  20. Quantized magnetoresistance in atomic-size contacts.

    PubMed

    Sokolov, Andrei; Zhang, Chunjuan; Tsymbal, Evgeny Y; Redepenning, Jody; Doudin, Bernard

    2007-03-01

    When the dimensions of a metallic conductor are reduced so that they become comparable to the de Broglie wavelengths of the conduction electrons, the absence of scattering results in ballistic electron transport and the conductance becomes quantized. In ferromagnetic metals, the spin angular momentum of the electrons results in spin-dependent conductance quantization and various unusual magnetoresistive phenomena. Theorists have predicted a related phenomenon known as ballistic anisotropic magnetoresistance (BAMR). Here we report the first experimental evidence for BAMR by observing a stepwise variation in the ballistic conductance of cobalt nanocontacts as the direction of an applied magnetic field is varied. Our results show that BAMR can be positive and negative, and exhibits symmetric and asymmetric angular dependences, consistent with theoretical predictions. PMID:18654248

  1. Anisotropic giant magnetoresistance in NbSb₂

    DOE PAGES

    Wang, Kefeng; Graf, D.; Li, Lijun; Wang, Limin; Petrovic, C.

    2014-12-05

    We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 × 10⁵% in 2 K and 9 T field, and 4.3 × 10⁶% in 0.4 K and 32 T field, without saturation) and field-induced metal semiconductor-like transition in NbSb₂. Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane. The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus the electronic structure reveal the coexistence of a small number of holes with very high mobility and a large number of electrons with low mobility. The large MR is attributed tomore » the change of the Fermi surface induced by the magnetic field in addition to the high mobility metal.« less

  2. Dirac State in Giant Magnetoresistive Materials

    NASA Astrophysics Data System (ADS)

    Wu, Y.; Jo, N. H.; Ochi, M.; Huang, L.; Mou, D.; Kong, T.; Mun, E.; Wang, L.; Lee, Y.; Bud'Ko, S. L.; Canfield, P. C.; Trivedi, N.; Arito, R.; Kaminski, A.

    We use ultrahigh resolution, tunable, vacuum ultraviolet laser-based angle-resolved photoemission spectroscopy (ARPES) to study the electronic properties of materials that recently were discovered to display titanic magnetoresistance. We find that that several of these materials have Dirac-like features in their band structure. In some materials those features are ``ordinary'' Dirac cones, while in others the linear Dirac dispersion of two crossing bands forms a linear object in 3D momentum space. Our observation poses an important question about the role of Dirac dispersion in the unusually high, non-saturating magnetoresistance of these materials. Research was supported by the US DOE, Office of Basic Energy Sciences under Contract No. DE-AC02-07CH11358; Gordon and Betty Moore Foundation EPiQS Initiative (Grant No. GBMF4411); CEM, a NSF MRSEC, under Grant No. DMR-1420451.

  3. Magnetoresistance of Rippled Graphene in a Parallel Magnetic Field

    NASA Astrophysics Data System (ADS)

    Wakabayashi, Junichi; Sano, Tomoya

    2011-12-01

    The magnetoresistance of a monolayer graphene in a random magnetic field(RMF) with zero mean has been investigated. The RMF was produced by applying a magnetic field parallel to the graphene plane utilizing ripples. The magnetoresistance has shown the same magnetic field dependence and, unexpectedly, the same carrier density dependence as the conventional two-dimensional electron systems in random magnetic fields. The relation between the characteristic length of ripples and the magnitude of the magnetoresistance is discussed.

  4. Temporal niche switching and reduced nest attendance in response to heat dissipation limits in lactating common voles (Microtus arvalis).

    PubMed

    van der Vinne, Vincent; Simons, Mirre J P; Reimert, Inonge; Gerkema, Menno P

    2014-04-10

    According to the heat dissipation limit theory, maximum metabolic turnover is limited by the capacity of the body to dissipate excess heat. Small mammals, including common voles (Microtus arvalis), face a heat dissipation limitation during lactation. Pup growth and milk production are reduced under higher ambient temperatures. Heat dissipation problems might in part be alleviated by modifying behavior, such as reducing nest attendance and being active at energetically optimal times of day. According to the circadian thermo-energetics hypothesis, animals can make use of daily ambient temperature fluctuations to alter their energetic expenditure. In this study we test whether heat challenged (housing at 30 °C compared to 21 °C) lactating common voles allocate their time differently among behaviors and whether their ultradian and circadian behavioral rhythmicity are altered. Behavior was scored every 13 min from automated picture recordings, while general locomotor activity was measured by passive infrared detectors to assess ultradian and circadian organization. The effects of ambient temperature on the ultradian organization of behavior were assessed by determining the ultradian period length and the distribution of activity within the ultradian bout. Changes in circadian organization were assessed by the distribution of activity over the light and dark phase. As a complementary measure nest temperature recordings were used to quantify nest attendance distribution between day and night. Lactating dams at 30 °C reduced the fraction of time spent on the nest while increasing the fraction of time resting without pups away from the nest. The ultradian period of locomotor activity was longer in voles housed at 30 °C during pregnancy and lactation, but not after weaning when the pups were removed. No differences in the distribution of activity within the ultradian bout could be detected. The circadian organization was also modulated by ambient temperature. Lactating

  5. Effect of electronic reconstruction on cuprate-manganite spin switches.

    SciTech Connect

    Liu, Y.; Visani, C.; Nemes, N. M.; Fitzsimmons, M. R.; Zhu, L. Y.; Tornos, J.; Zhernenkov, M.; Hoffmann, A.; Leon, C.; Santamaria, J.; te Velthuis, S. G. E.

    2012-01-01

    We examine the anomalous inverse spin switch behavior in La{sub 0.7}Ca{sub 0.3}MnO{sub 3}(LCMO)/YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO)/LCMO trilayers by combined transport studies and polarized neutron reflectometry. Measuring magnetization profiles and magnetoresistance in an in-plane rotating magnetic field, we prove that, contrary to many accepted theoretical scenarios, the relative orientation between the two LCMO's magnetizations is not sufficient to determine the magnetoresistance. Rather the field dependence of magnetoresistance is explained by the interplay between the applied magnetic field and the (exponential tail of the) induced exchange field in YBCO, the latter originating from the electronic reconstruction at the LCMO/YBCO interfaces.

  6. Ultra-Sensitive Magnetoresistive Displacement Sensing Device

    NASA Technical Reports Server (NTRS)

    Olivas, John D. (Inventor); Lairson, Bruce M. (Inventor); Ramesham, Rajeshuni (Inventor)

    2003-01-01

    An ultrasensitive displacement sensing device for use in accelerometers, pressure gauges, temperature transducers, and the like, comprises a sputter deposited, multilayer, magnetoresistive field sensor with a variable electrical resistance based on an imposed magnetic field. The device detects displacement by sensing changes in the local magnetic field about the magnetoresistive field sensor caused by the displacement of a hard magnetic film on a movable microstructure. The microstructure, which may be a cantilever, membrane, bridge, or other microelement, moves under the influence of an acceleration a known displacement predicted by the configuration and materials selected, and the resulting change in the electrical resistance of the MR sensor can be used to calculate the displacement. Using a micromachining approach, very thin silicon and silicon nitride membranes are fabricated in one preferred embodiment by means of anisotropic etching of silicon wafers. Other approaches include reactive ion etching of silicon on insulator (SOI), or Low Pressure Chemical Vapor Deposition of silicon nitride films over silicon substrates. The device is found to be improved with the use of giant magnetoresistive elements to detect changes in the local magnetic field.

  7. Giant magnetoresistance in organic spin-valves.

    PubMed

    Xiong, Z H; Wu, Di; Vardeny, Z Valy; Shi, Jing

    2004-02-26

    A spin valve is a layered structure of magnetic and non-magnetic (spacer) materials whose electrical resistance depends on the spin state of electrons passing through the device and so can be controlled by an external magnetic field. The discoveries of giant magnetoresistance and tunnelling magnetoresistance in metallic spin valves have revolutionized applications such as magnetic recording and memory, and launched the new field of spin electronics--'spintronics'. Intense research efforts are now devoted to extending these spin-dependent effects to semiconductor materials. But while there have been noteworthy advances in spin injection and detection using inorganic semiconductors, spin-valve devices with semiconducting spacers have not yet been demonstrated. pi-conjugated organic semiconductors may offer a promising alternative approach to semiconductor spintronics, by virtue of their relatively strong electron-phonon coupling and large spin coherence. Here we report the injection, transport and detection of spin-polarized carriers using an organic semiconductor as the spacer layer in a spin-valve structure, yielding low-temperature giant magnetoresistance effects as large as 40 per cent. PMID:14985756

  8. First Order Colossal Magnetoresistance Transitions in the Two-Orbital Model for Manganites

    SciTech Connect

    Sen, Cengiz; Alvarez, Gonzalo; Dagotto, Elbio R

    2010-01-01

    Large-scale Monte Carlo simulation results for the two-orbital model for manganites, including Jahn- Teller lattice distortions, are presented here. At hole density x 1=4 and in the vicinity of the region of competition between the ferromagnetic metallic and spin-charge-orbital ordered insulating phases, the colossal magnetoresistance (CMR) phenomenon is observed with a magnetoresistance ratio 10 000%. Our main result is that this CMR transition is found to be of first order in some portions of the phase diagram, in agreement with early results from neutron scattering, specific heat, and magnetization, thus solving a notorious discrepancy between experiments and previous theoretical studies. The first order characteristics of the transition survive, and are actually enhanced, when weak quenched disorder is introduced.

  9. Switch wear leveling

    SciTech Connect

    Wu, Hunter; Sealy, Kylee; Gilchrist, Aaron

    2015-09-01

    An apparatus for switch wear leveling includes a switching module that controls switching for two or more pairs of switches in a switching power converter. The switching module controls switches based on a duty cycle control technique and closes and opens each switch in a switching sequence. The pairs of switches connect to a positive and negative terminal of a DC voltage source. For a first switching sequence a first switch of a pair of switches has a higher switching power loss than a second switch of the pair of switches. The apparatus includes a switch rotation module that changes the switching sequence of the two or more pairs of switches from the first switching sequence to a second switching sequence. The second switch of a pair of switches has a higher switching power loss than the first switch of the pair of switches during the second switching sequence.

  10. Effects of magnetic and structural properties on magnetoresistance in amorphous TbFeCo

    SciTech Connect

    Yumoto, S.; Hidaka, Y.; Okada, O. )

    1990-05-01

    An extraordinary magnetoresistance effect, linearly dependent on the external magnetic field, is observed in amorphous TbFeCo films. The electrical resistance jumps by {delta}{rho} at magnetization reversal. {delta}{rho} depends on Tb concentration and it becomes nearly zero at about Tb 26 at. % concentration. To clarify the Tb concentration dependence of {delta}{rho}, the magnetic properties and the heat treatment effect are examined. It is found that the magnetic anisotropy field ({ital H}{sub {ital k}}) is maximum at about Tb 26 at. % and the gradient of linear magnetoresistance, {delta}{rho}/({rho}{sub 0}{ital H}{sub {ital c}}), is proportional to the {minus}{ital H}{sub {ital k}}+ const, where {rho}{sub 0} is the electric resistance in zero field, {ital H}{sub {ital c}} is the coercive force, and the constant is about 100 kOe. The structural relaxation, a coercive force change by the heat treatment up to 200 {degree}C, is examined. It is found that as {delta}{rho}/({rho}{sub 0}{ital H}{sub {ital c}}) in the as-sputtered state decreases, the coercive force change by the heat treatment decreases. The coercive force change is minimum at about Tb 26 at. %, where {delta}{rho}/({rho}{sub 0}{ital H}{sub {ital c}}) becomes zero. These results mean that linear magnetoresistance is related to structure relaxation by heat treatment. The {delta}{rho} disappearance at about Tb 26 at. % is based on the stable structure against heat treatment and the largest magnetic anisotropy field.

  11. Spin-dependent ballistic transport properties and electronic structures of pristine and edge-doped zigzag silicene nanoribbons: large magnetoresistance.

    PubMed

    Chen, An-Bang; Wang, Xue-Feng; Vasilopoulos, P; Zhai, Ming-Xing; Liu, Yu-Shen

    2014-03-21

    The electronic structure and conductance of substitutionally edge-doped zigzag silicene nanoribbons (ZSiNRs) are investigated using the nonequilibrium Green's function method combined with the density functional theory. Two-probe systems of ZSiNRs in both ferromagnetic and antiferromagnetic states are considered. Doping effects of elements from groups III and V, in a parallel or antiparallel magnetic configuration of the two electrodes, are discussed. By switching on and off the external magnetic field, we may convert the metallic ferromagnetic ZSiNRs into insulating antiferromagnetic ZSiNRs. In the ferromagnetic state, even- or odd-width ZSiNRs exhibit a drastically different magnetoresistance. In an odd-width edge-doped ZSiNR a large magnetoresistance occurs compared to that in a pristine ZSiNR. The situation is reversed in even-width ZSiNRs. These phenomena result from the drastic change in the conductance in the antiparallel configuration.

  12. Spin-dependent ballistic transport properties and electronic structures of pristine and edge-doped zigzag silicene nanoribbons: large magnetoresistance

    NASA Astrophysics Data System (ADS)

    Chen, An-Bang; Wang, Xue-Feng; Vasilopoulos, P.; Zhai, Ming-Xing; Liu, Yu-Shen

    The electronic structure and conductance of substitutionally edge-doped zigzag silicene nanoribbons (ZSiNRs) are investigated using the nonequilibrium Green's function method combined with the density functional theory. Two-probe systems of ZSiNRs in both ferromagnetic and antiferromagnetic states are considered. Doping effects of elements from groups III and V, in a parallel or antiparallel magnetic configuration of the two electrodes, are discussed. Switching on and off the external magnetic field, we may convert the metallic ferromagnetic ZSiNRs into insulating antiferromagnetic ZSiNRs. In the ferromagnetic state, even- or odd-width ZSiNRs exhibit a drastically different magnetoresistance. In an odd-width edge-doped ZSiNR a large magnetoresistance occurs compared to that in a pristine ZSiNR. The situation is reversed in even-width ZSiNRs. These phenomena result from the drastic change of the conductance in the antiparallel configuration.

  13. Dramatically decreased magnetoresistance in non-stoichiometric WTe2 crystals

    NASA Astrophysics Data System (ADS)

    Lv, Yang-Yang; Zhang, Bin-Bin; Li, Xiao; Pang, Bin; Zhang, Fan; Lin, Da-Jun; Zhou, Jian; Yao, Shu-Hua; Chen, Y. B.; Zhang, Shan-Tao; Lu, Minghui; Liu, Zhongkai; Chen, Yulin; Chen, Yan-Feng

    2016-05-01

    Recently, the layered semimetal WTe2 has attracted renewed interest owing to the observation of a non-saturating and giant positive magnetoresistance (~105%), which can be useful for magnetic memory and spintronic devices. However, the underlying mechanisms of the giant magnetoresistance are still under hot debate. Herein, we grew the stoichiometric and non-stoichiometric WTe2 crystals to test the robustness of giant magnetoresistance. The stoichiometric WTe2 crystals have magnetoresistance as large as 3100% at 2 K and 9-Tesla magnetic field. However, only 71% and 13% magnetoresistance in the most non-stoichiometry (WTe1.80) and the highest Mo isovalent substitution samples (W0.7Mo0.3Te2) are observed, respectively. Analysis of the magnetic-field dependent magnetoresistance of non-stoichiometric WTe2 crystals substantiates that both the large electron-hole concentration asymmetry and decreased carrier mobility, induced by non-stoichiometry, synergistically lead to the decreased magnetoresistance. This work sheds more light on the origin of giant magnetoresistance observed in WTe2.

  14. Hall effect and magnetoresistivity in the ternary molybdenum sulfides

    NASA Technical Reports Server (NTRS)

    Woollam, J. A.; Haugland, E. J.; Alterovitz, S. A.

    1978-01-01

    The Hall coefficient and magnetoresistance of sputtered films of Cu(x)Mo6S8 and PbMo6S8 have been measured, as well as the magnetoresistance in sintered samples of the same materials. Assuming a single band model, net carrier densities and mean mobilities are determined

  15. Dramatically decreased magnetoresistance in non-stoichiometric WTe2 crystals

    PubMed Central

    Lv, Yang-Yang; Zhang, Bin-Bin; Li, Xiao; Pang, Bin; Zhang, Fan; Lin, Da-Jun; Zhou, Jian; Yao, Shu-Hua; Chen, Y. B.; Zhang, Shan-Tao; Lu, Minghui; Liu, Zhongkai; Chen, Yulin; Chen, Yan-Feng

    2016-01-01

    Recently, the layered semimetal WTe2 has attracted renewed interest owing to the observation of a non-saturating and giant positive magnetoresistance (~105%), which can be useful for magnetic memory and spintronic devices. However, the underlying mechanisms of the giant magnetoresistance are still under hot debate. Herein, we grew the stoichiometric and non-stoichiometric WTe2 crystals to test the robustness of giant magnetoresistance. The stoichiometric WTe2 crystals have magnetoresistance as large as 3100% at 2 K and 9-Tesla magnetic field. However, only 71% and 13% magnetoresistance in the most non-stoichiometry (WTe1.80) and the highest Mo isovalent substitution samples (W0.7Mo0.3Te2) are observed, respectively. Analysis of the magnetic-field dependent magnetoresistance of non-stoichiometric WTe2 crystals substantiates that both the large electron-hole concentration asymmetry and decreased carrier mobility, induced by non-stoichiometry, synergistically lead to the decreased magnetoresistance. This work sheds more light on the origin of giant magnetoresistance observed in WTe2. PMID:27228908

  16. Sign control of magnetoresistance through chemically engineered interfaces.

    PubMed

    Ciudad, David; Gobbi, Marco; Kinane, Christy J; Eich, Marius; Moodera, Jagadeesh S; Hueso, Luis E

    2014-12-01

    Chemically engineered interfaces are shown to produce inversions of the magnetoresistance in spintronic devices including lithium fluoride interlayers. This behavior is explained by the formation of anti-ferromagnetic difluoride layers. By changing the order of deposition of the different materials, the sign of the magnetoresistance can be deterministically controlled both in organic spin valves and in inorganic magnetic tunnel junctions.

  17. Sign control of magnetoresistance through chemically engineered interfaces.

    PubMed

    Ciudad, David; Gobbi, Marco; Kinane, Christy J; Eich, Marius; Moodera, Jagadeesh S; Hueso, Luis E

    2014-12-01

    Chemically engineered interfaces are shown to produce inversions of the magnetoresistance in spintronic devices including lithium fluoride interlayers. This behavior is explained by the formation of anti-ferromagnetic difluoride layers. By changing the order of deposition of the different materials, the sign of the magnetoresistance can be deterministically controlled both in organic spin valves and in inorganic magnetic tunnel junctions. PMID:25339373

  18. Magnetoresistance reversal in antiperovskite compound Mn{sub 3}Cu{sub 0.5}Zn{sub 0.5}N

    SciTech Connect

    Zhang, X. H.; Yin, Y.; Yuan, Q.; Han, J. C.; Zhang, Z. H.; Jian, J. K.; Zhao, J. G. E-mail: songbo@hit.edu.cn; Song, B. E-mail: songbo@hit.edu.cn

    2014-03-28

    We report detailed investigations of the structure, magnetic properties, electronic transport, and specific heat in Mn-based antiperovskite compounds Mn{sub 3}Cu{sub 0.5}Zn{sub 0.5}N. Most strikingly, there are several fascinating features: (i) The magnetoresistance at 30 kOe (40 kOe) exceeds ∼1% (∼2%) over a temperature span of ∼70 K (∼25 K) from 5 to 140 K; (ii) magnetoresistance fluctuates at temperatures of 100–200 K, including an obvious sign reversal from negative to positive at ∼140 K. Analysis of the specific heat reveals that the magnetoresistance reversal may originate from the reconstruction of the Fermi surface accompanying an antiferromagnetic-ferromagnetic transition.

  19. Electrically tuned magnetic order and magnetoresistance in a topological insulator.

    PubMed

    Zhang, Zuocheng; Feng, Xiao; Guo, Minghua; Li, Kang; Zhang, Jinsong; Ou, Yunbo; Feng, Yang; Wang, Lili; Chen, Xi; He, Ke; Ma, Xucun; Xue, Qikun; Wang, Yayu

    2014-09-15

    The interplay between topological protection and broken time reversal symmetry in topological insulators may lead to highly unconventional magnetoresistance behaviour that can find unique applications in magnetic sensing and data storage. However, the magnetoresistance of topological insulators with spontaneously broken time reversal symmetry is still poorly understood. In this work, we investigate the transport properties of a ferromagnetic topological insulator thin film fabricated into a field effect transistor device. We observe a complex evolution of gate-tuned magnetoresistance, which is positive when the Fermi level lies close to the Dirac point but becomes negative at higher energies. This trend is opposite to that expected from the Berry phase picture, but is intimately correlated with the gate-tuned magnetic order. The underlying physics is the competition between the topology-induced weak antilocalization and magnetism-induced negative magnetoresistance. The simultaneous electrical control of magnetic order and magnetoresistance facilitates future topological insulator based spintronic devices.

  20. Resistance switching memory in perovskite oxides

    SciTech Connect

    Yan, Z.B. Liu, J.-M.

    2015-07-15

    The resistance switching behavior has recently attracted great attentions for its application as resistive random access memories (RRAMs) due to a variety of advantages such as simple structure, high-density, high-speed and low-power. As a leading storage media, the transition metal perovskite oxide owns the strong correlation of electrons and the stable crystal structure, which brings out multifunctionality such as ferroelectric, multiferroic, superconductor, and colossal magnetoresistance/electroresistance effect, etc. The existence of rich electronic phases, metal–insulator transition and the nonstoichiometric oxygen in perovskite oxide provides good platforms to insight into the resistive switching mechanisms. In this review, we first introduce the general characteristics of the resistance switching effects, the operation methods and the storage media. Then, the experimental evidences of conductive filaments, the transport and switching mechanisms, and the memory performances and enhancing methods of perovskite oxide based filamentary RRAM cells have been summarized and discussed. Subsequently, the switching mechanisms and the performances of the uniform RRAM cells associating with the carrier trapping/detrapping and the ferroelectric polarization switching have been discussed. Finally, the advices and outlook for further investigating the resistance switching and enhancing the memory performances are given.

  1. Spin Seebeck measurements of current-induced switching in YIG

    NASA Astrophysics Data System (ADS)

    Bartell, Jason; Jermain, Colin; Aradhya, Sriharsha; Wang, Hailong; Buhrman, Robert; Yang, Fengyuan; Ralph, Daniel; Fuchs, Gregory

    Quantifying spin torques generated at the interface between a normal metal (NM) and a ferromagnetic insulator (FI) is an important step in understanding the spin hall effect without charge transport. Measuring magnetization in NM/FI devices is challenging, however, because both magnetoresistive and magneto-optical signals are tiny in thin-film bilayers. We show that a promising alternative measurement approach is the use of picosecond thermal gradients to study spin torques in Pt/Yttrium Iron Garnet (YIG) bilayers. Recently, we demonstrated the application of heat to stroboscopically transduce a local magnetic moment into an electrical signal via the time resolved anomalous Nernst effect (TRANE) in ferromagnetic metals. Using a similar geometry the spin Seebeck effect of YIG combined with the inverse spin Hall effect of Pt enables measurement of local magnetization. Here we describe our study using this technique to study current-induced switching in Pt/YIG with sub-10 nm thick YIG films We acknowledge support from AFOSR.

  2. Magnetoresistive nanosensors: controlling magnetism at the nanoscale.

    PubMed

    Leitao, Diana C; Silva, Ana V; Paz, Elvira; Ferreira, Ricardo; Cardoso, Susana; Freitas, Paulo P

    2016-01-29

    The ability to detect the magnetic fields that surround us has promoted vast technological advances in sensing techniques. Among those, magnetoresistive sensors display an unpaired spatial resolution. Here, we successfully control the linear range of nanometric sensors using an interfacial exchange bias sensing layer coupling. An effective matching of material properties and sensor geometry improves the nanosensor performance, with top sensitivities of 3.7% mT(-1). The experimental results are well supported by 3D micromagnetic and magneto-transport simulations. PMID:26658286

  3. Giant magnetoresistance in organic spin valves

    SciTech Connect

    Sun, Da-Li; Yin, Lifeng; Sun, Chengjun; Guo, Hangwen; Gai, Zheng; Zhang, Xiaoguang; Ward, Thomas Z; Cheng, Zhaohua; Shen, Jian

    2010-01-01

    Interfacial diffusion between magnetic electrodes and organic spacer layers is a serious problem in the organic spintronics which complicates attempts to understand the spin-dependent transport mechanism and hurts the achievement of a desirably high magnetoresistance (MR). We deposit nanodots instead of atoms onto the organic layer using buffer layer assist growth. Spin valves using this method exhibit a sharper interface and a giant MR of up to {approx}300%. Analysis of the current-voltage characteristics indicates that the spin-dependent carrier injection correlates with the observed MR.

  4. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    DOEpatents

    Yang, Peidong; Choi, Heonjin; Lee, Sangkwon; He, Rongrui; Zhang, Yanfeng; Kuykendal, Tevye; Pauzauskie, Peter

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  5. Giant magnetoresistance in bilayer graphene nanoflakes

    NASA Astrophysics Data System (ADS)

    Farghadan, Rouhollah; Farekiyan, Marzieh

    2016-09-01

    Coherent spin transport through bilayer graphene (BLG) nanoflakes sandwiched between two electrodes made of single-layer zigzag graphene nanoribbon was investigated by means of Landauer-Buttiker formalism. Application of a magnetic field only on BLG structure as a channel produces a perfect spin polarization in a large energy region. Moreover, the conductance could be strongly modulated by magnetization of the zigzag edge of AB-stacked BLG, and the junction, entirely made of carbon, produces a giant magnetoresistance (GMR) up to 100%. Intestinally, GMR and spin polarization could be tuned by varying BLG width and length. Generally, MR in a AB-stacked BLG strongly increases (decreases) with length (width).

  6. Magnetization and magnetoresistance of a spin valve

    NASA Astrophysics Data System (ADS)

    Bebenin, N. G.; Ustinov, V. V.

    2015-02-01

    Hysteresis of magnetization and magnetoresistance caused by a change in the orientation of the free layer of a spin valve has been investigated theoretically. It has been shown that the width of the hysteresis loop determined from the data on the dependence of the magnetic moment of the valve on the magnetic field can be less than the width of the loop determined from the resistive data. Formulas have been obtained that describe the dependence of the width of the hysteresis loop on the magnetic field at various values of the exchange field acting on the free layer.

  7. Systematic study of doping dependence on linear magnetoresistance in p-PbTe

    SciTech Connect

    Schneider, J. M.; Chitta, V. A.; Oliveira, N. F.; Peres, M. L. Castro, S. de; Soares, D. A. W.; Wiedmann, S.; Zeitler, U.; Abramof, E.; Rappl, P. H. O.; Mengui, U. A.

    2014-10-20

    We report on a large linear magnetoresistance effect observed in doped p-PbTe films. While undoped p-PbTe reveals a sublinear magnetoresistance, p-PbTe films doped with BaF{sub 2} exhibit a transition to a nearly perfect linear magnetoresistance behaviour that is persistent up to 30 T. The linear magnetoresistance slope ΔR/ΔB is to a good approximation, independent of temperature. This is in agreement with the theory of Quantum Linear Magnetoresistance. We also performed magnetoresistance simulations using a classical model of linear magnetoresistance. We found that this model fails to explain the experimental data. A systematic study of the doping dependence reveals that the linear magnetoresistance response has a maximum for small BaF{sub 2} doping levels and diminishes rapidly for increasing doping levels. Exploiting the huge impact of doping on the linear magnetoresistance signal could lead to new classes of devices with giant magnetoresistance behavior.

  8. Linearization strategies for high sensitivity magnetoresistive sensors

    NASA Astrophysics Data System (ADS)

    Silva, Ana V.; Leitao, Diana C.; Valadeiro, João; Amaral, José; Freitas, Paulo P.; Cardoso, Susana

    2015-10-01

    Ultrasensitive magnetic field sensors envisaged for applications on biomedical imaging require the detection of low-intensity and low-frequency signals. Therefore linear magnetic sensors with enhanced sensitivity low noise levels and improved field detection at low operating frequencies are necessary. Suitable devices can be designed using magnetoresistive sensors, with room temperature operation, adjustable detected field range, CMOS compatibility and cost-effective production. The advent of spintronics set the path to the technological revolution boosted by the storage industry, in particular by the development of read heads using magnetoresistive devices. New multilayered structures were engineered to yield devices with linear output. We present a detailed study of the key factors influencing MR sensor performance (materials, geometries and layout strategies) with focus on different linearization strategies available. Furthermore strategies to improve sensor detection levels are also addressed with best reported values of ˜40 pT/√Hz at 30 Hz, representing a step forward the low field detection at room temperature.

  9. Advanced giant magnetoresistance technology for measurement applications

    NASA Astrophysics Data System (ADS)

    Weiss, Roland; Mattheis, Roland; Reiss, Günter

    2013-08-01

    Giant magnetoresistance (GMR) sensors are considered one of the first real applications of nanotechnology. They consist of nm-thick layered structures where ferromagnetic metals are sandwiched by nonmagnetic metals. Such multilayered films produce a large change in resistance (typically 10 to 20%) when subjected to a magnetic field, compared with a maximum change of a few per cent for other types of magnetic sensors. This technology has been intensively used in read heads for hard disk drives and now increasingly finds applications due to the high sensitivity and signal-to-noise ratio. Additionally these sensors are compatible with miniaturization and thus offer a high spatial resolution combined with a frequency range up to the 100 MHz regime and simple electronic conditioning. In this review, we first discuss the basics of the underlying magnetoresistance effects in layered structures and then present three prominent examples for future applications: in the field of current sensing the new GMR sensors offer high bandwidth and good accuracy in a space-saving open loop measurement configuration. In rotating systems they can be used for multiturn angle measurements, and in biotechnology the detection of magnetic particles enables the quantitative measurement of biomolecule concentrations.

  10. Magnetoresistive Flux Focusing Eddy Current Flaw Detection

    NASA Technical Reports Server (NTRS)

    Wincheski, Russell A. (Inventor); Namkung, Min (Inventor); Simpson, John W. (Inventor)

    2005-01-01

    A giant magnetoresistive flux focusing eddy current device effectively detects deep flaws in thick multilayer conductive materials. The probe uses an excitation coil to induce eddy currents in conducting material perpendicularly oriented to the coil s longitudinal axis. A giant magnetoresistive (GMR) sensor, surrounded by the excitation coil, is used to detect generated fields. Between the excitation coil and GMR sensor is a highly permeable flux focusing lens which magnetically separates the GMR sensor and excitation coil and produces high flux density at the outer edge of the GMR sensor. The use of feedback inside the flux focusing lens enables complete cancellation of the leakage fields at the GMR sensor location and biasing of the GMR sensor to a location of high magnetic field sensitivity. In an alternate embodiment, a permanent magnet is positioned adjacent to the GMR sensor to accomplish the biasing. Experimental results have demonstrated identification of flaws up to 1 cm deep in aluminum alloy structures. To detect deep flaws about circular fasteners or inhomogeneities in thick multi-layer conductive materials, the device is mounted in a hand-held rotating probe assembly that is connected to a computer for system control, data acquisition, processing and storage.

  11. Magnetoresistive flux focusing eddy current flaw detection

    NASA Technical Reports Server (NTRS)

    Wincheski, Russell A. (Inventor); Namkung, Min (Inventor); Simpson, John W. (Inventor)

    2005-01-01

    A giant magnetoresistive flux focusing eddy current device effectively detects deep flaws in thick multilayer conductive materials. The probe uses an excitation coil to induce eddy currents in conducting material perpendicularly oriented to the coil's longitudinal axis. A giant magnetoresistive (GMR) sensor, surrounded by the excitation coil, is used to detect generated fields. Between the excitation coil and GMR sensor is a highly permeable flux focusing lens which magnetically separates the GMR sensor and excitation coil and produces high flux density at the outer edge of the GMR sensor. The use of feedback inside the flux focusing lens enables complete cancellation of the leakage fields at the GMR sensor location and biasing of the GMR sensor to a location of high magnetic field sensitivity. In an alternate embodiment, a permanent magnet is positioned adjacent to the GMR sensor to accomplish the biasing. Experimental results have demonstrated identification of flaws up to 1 cm deep in aluminum alloy structures. To detect deep flaws about circular fasteners or inhomogeneities in thick multilayer conductive materials, the device is mounted in a hand-held rotating probe assembly that is connected to a computer for system control, data acquisition, processing and storage.

  12. Nonlocal Magnetoresistance Mediated by Spin Superfluidity

    NASA Astrophysics Data System (ADS)

    Takei, So; Tserkovnyak, Yaroslav

    2015-10-01

    The electrical response of two diffusive metals is studied when they are linked by a magnetic insulator hosting a topologically stable (superfluid) spin current. We discuss how charge currents in the metals induce a spin supercurrent state, which in turn generates a magnetoresistance that depends on the topology of the electrical circuit. This magnetoresistance relies on phase coherence over the entire magnet and gives direct evidence for spin superfluidity. We show that driving the magnet with an ac current allows coherent spin transport even in the presence of U(1)-breaking magnetic anisotropy that can preclude dc superfluid transport. Spin transmission in the ac regime shows a series of resonance peaks as a function of frequency. The peak locations, heights, and widths can be used to extract static interfacial properties, e.g., the spin-mixing conductance and effective spin Hall angle, and to probe dynamic properties such as the spin-wave dispersion. Thus, ac transport may provide a simpler route to realizing nonequilbrium coherent spin transport and a useful way to characterize the magnetic system, serving as a precursor to the realization of dc superfluid spin transport.

  13. Quantitative current measurements using scanning magnetoresistance microscopy.

    PubMed

    Takezaki, Taiichi; Sueoka, Kazuhisa

    2008-08-01

    We have demonstrated the capability of scanning magnetoresistance microscope (SMRM) to be used for quantitative current measurements. The SMRM is a magnetic microscope that is based on an atomic force microscope (AFM) and simultaneously measures the localized surface magnetic field distribution and surface topography. The proposed SMRM employs an in-house built AFM cantilever equipped with a miniaturized magnetoresistive (MR) sensor as a magnetic field sensor. In this study, a spin-valve type MR sensor with a width of 1 microm was used to measure the magnetic field distribution induced by a current carrying wire with a width of 5 microm and a spacing of 1.6 microm at room temperature and under ambient conditions. Simultaneous imaging of the magnetic field distribution and the topography was successfully performed in the DC current ranging from 500 microA to 8 mA. The characterized SV sensor, which has a linear response to magnetic fields, offers the quantitative analysis of a magnetic field and current. The measured magnetic field strength was in good agreement with the result simulated using Biot-Savart's law. PMID:18599218

  14. Non-local magnetoresistance in YIG/Pt nanostructures

    SciTech Connect

    Goennenwein, Sebastian T. B. Pernpeintner, Matthias; Gross, Rudolf; Huebl, Hans; Schlitz, Richard; Ganzhorn, Kathrin; Althammer, Matthias

    2015-10-26

    We study the local and non-local magnetoresistance of thin Pt strips deposited onto yttrium iron garnet. The local magnetoresistive response, inferred from the voltage drop measured along one given Pt strip upon current-biasing it, shows the characteristic magnetization orientation dependence of the spin Hall magnetoresistance. We simultaneously also record the non-local voltage appearing along a second, electrically isolated, Pt strip, separated from the current carrying one by a gap of a few 100 nm. The corresponding non-local magnetoresistance exhibits the symmetry expected for a magnon spin accumulation-driven process, confirming the results recently put forward by Cornelissen et al. [“Long-distance transport of magnon spin information in a magnetic insulator at room temperature,” Nat. Phys. (published online 14 September 2015)]. Our magnetotransport data, taken at a series of different temperatures as a function of magnetic field orientation, rotating the externally applied field in three mutually orthogonal planes, show that the mechanisms behind the spin Hall and the non-local magnetoresistance are qualitatively different. In particular, the non-local magnetoresistance vanishes at liquid Helium temperatures, while the spin Hall magnetoresistance prevails.

  15. Power Switching Device

    NASA Technical Reports Server (NTRS)

    1993-01-01

    The MOS-Controlled Thyristor is a new type of power switching device for faster and more efficient control and management of power electronics. It enables power electronic switching at frequencies of 50 to 100 thousand times a second with much lower power losses than other semiconductor devices. Advantages include electric power savings and smaller space. The device is used in motor and power controllers, AC & DC motor drives and induction heating. Early development was supported by Lewis Research Center (LEW) and other agencies. General Electric''s power semiconductor operation, the initial NASA contractor, was later purchased by Harris Semiconductor.

  16. Optical switches and switching methods

    SciTech Connect

    Doty, Michael

    2008-03-04

    A device and method for collecting subject responses, particularly during magnetic imaging experiments and testing using a method such as functional MRI. The device comprises a non-metallic input device which is coupled via fiber optic cables to a computer or other data collection device. One or more optical switches transmit the subject's responses. The input device keeps the subject's fingers comfortably aligned with the switches by partially immobilizing the forearm, wrist, and/or hand of the subject. Also a robust nonmetallic switch, particularly for use with the input device and methods for optical switching.

  17. Large magnetoresistance of insulating silicon films with superconducting nanoprecipitates

    NASA Astrophysics Data System (ADS)

    Heera, V.; Fiedler, J.; Skorupa, W.

    2016-10-01

    We report on large negative and positive magnetoresistance in inhomogeneous, insulating Si:Ga films below a critical temperature of about 7 K. The magnetoresistance effect exceeds 300 % at temperatures below 3 K and fields of 8 T. The comparison of the transport properties of superconducting samples with that of insulating ones reveals that the large magnetoresistance is associated with the appearance of local superconductivity. A simple phenomenological model based on localized Cooper pairs and hopping quasiparticles is able to describe the temperature and magnetic field dependence of the sheet resistance of such films.

  18. Magnetoresistance in magnetic and nonmagnetic rare earth compounds

    NASA Astrophysics Data System (ADS)

    Gratz, E.; Maikis, M.; Bauer, E.; Nowotny, H.

    1995-02-01

    The temperature dependence of the magnetoresistance Δρ/ ρ of selected magnetic and nonmagnetic RE compounds in fields up to 10 T has been measured. The discussion of the positive magnetoresistance is based on Kohler's rule. It was found that deviations from Kohler's rule at low temperatures depend on the magnitude of the individual residual resistivity. Ferromagnetic compounds exhibit negative values and a minimum in the vicinity of the Curie temperature in accordance to a model calculation of Yamada and Takada. The positive Δρ/ ρ contribution in the low temperature region, observed in all magnetic compounds, is due to the dominating classical magnetoresistance in this temperature range.

  19. Anisotropic magnetoresistance dominant in a three terminal Hanle measurement

    NASA Astrophysics Data System (ADS)

    Malec, Christopher; Miller, Michael M.; Johnson, Mark

    2016-02-01

    Experiments are performed on mesoscopic nonlocal lateral spin valves with aluminum channels and Permalloy electrodes. Four-terminal magnetoresistance and Hanle measurements characterize the spin accumulation with results that compare well with published work. Three-terminal Hanle measurements of the Permalloy/aluminum (Py/Al) interfaces show bell-shaped curves that can be fit to Lorentzians. These curves are three orders of magnitude larger than the spin accumulation. Using anisotropic magnetoresistance measurements of individual Permalloy electrodes, we demonstrate that the three-terminal measurements are dominated by anisotropic magnetoresistance effects unrelated to spin accumulation.

  20. Energy scales and magnetoresistance at a quantum critical point

    NASA Astrophysics Data System (ADS)

    Shaginyan, V. R.; Amusia, M. Ya.; Msezane, A. Z.; Popov, K. G.; Stephanovich, V. A.

    2009-03-01

    The magnetoresistance (MR) of CeCoIn 5 is notably different from that in many conventional metals. We show that a pronounced crossover from negative to positive MR at elevated temperatures and fixed magnetic fields is determined by the scaling behavior of quasiparticle effective mass. At a quantum critical point (QCP) this dependence generates kinks (crossover points from fast to slow growth) in thermodynamic characteristics (like specific heat, magnetization, etc.) at some temperatures when a strongly correlated electron system transits from the magnetic field induced Landau-Fermi liquid (LFL) regime to the non-Fermi liquid (NFL) one taking place at rising temperatures. We show that the above kink-like peculiarity separates two distinct energy scales in QCP vicinity - low temperature LFL scale and high temperature one related to NFL regime. Our comprehensive theoretical analysis of experimental data permits to reveal for the first time new MR and kinks scaling behavior as well as to identify the physical reasons for above energy scales.

  1. Energy scales and magnetoresistance at a quantum critical point

    NASA Astrophysics Data System (ADS)

    Amusia, Miron; Shaginyan, Vasiliy

    2009-05-01

    The magnetoresistance (MR) of CeCoIn55 is notably different from that in many conventional metals. We show that a pronounced crossover from negative to positive MR at elevated temperatures and fixed magnetic fields is determined by the scaling behavior of quasiparticle effective mass. At a quantum critical point (QCP) this dependence generates kinks (crossover points from fast to slow growth) in thermodynamic characteristics (like specific heat, magnetization etc) at some temperatures when a strongly correlated electron system transits from the magnetic field induced Landau Fermi liquid (LFL) regime to the non-Fermi liquid (NFL) one taking place at rising temperatures. We show that the above kink-like peculiarity separates two distinct energy scales in QCP vicinity - low temperature LFL scale and high temperature one related to NFL regime. We show that the same behavior is observed under the application of elevated magnetic field at fixed temperature. These observations are in accord with recent facts (P. Gegenwart, et. al., Science 315, 969 (2007)). Our comprehensive theoretical analysis of experimental data permits to reveal for the first time new MR and kinks scaling behavior as well as to identify the physical reasons for above energy scales.

  2. FAST ACTING CURRENT SWITCH

    DOEpatents

    Batzer, T.H.; Cummings, D.B.; Ryan, J.F.

    1962-05-22

    A high-current, fast-acting switch is designed for utilization as a crowbar switch in a high-current circuit such as used to generate the magnetic confinement field of a plasma-confining and heat device, e.g., Pyrotron. The device particularly comprises a cylindrical housing containing two stationary, cylindrical contacts between which a movable contact is bridged to close the switch. The movable contact is actuated by a differential-pressure, airdriven piston assembly also within the housing. To absorb the acceleration (and the shock imparted to the device by the rapidly driven, movable contact), an adjustable air buffer assembly is provided, integrally connected to the movable contact and piston assembly. Various safety locks and circuit-synchronizing means are also provided to permit proper cooperation of the invention and the high-current circuit in which it is installed. (AEC)

  3. Nonlocal ordinary magnetoresistance in indium arsenide

    NASA Astrophysics Data System (ADS)

    Liu, Pan.; Yuan, Zhonghui.; Wu, Hao.; Ali, S. S.; Wan, Caihua.; Ban, Shiliang.

    2015-07-01

    Deflection of carriers by Lorentz force results in an ordinary magnetoresistance (OMR) of (μB)2 at low field. Here we demonstrate that the OMR in high mobility semiconductor InAs could be enhanced by measurement geometry where two probes of voltmeter were both placed on one outer side of two probes of current source. The nonlocal OMR was 3.6 times as large as the local one, reaching 1.8×104% at 5 T. The slope of the linear field dependence of the nonlocal OMR was improved from 12.6 T-1 to 45.3 T-1. The improvement was ascribed to polarity-conserved charges accumulating on boundaries in nonlocal region due to Hall effect. This InAs device with nonlocal geometry could be competitive in B-sensors due to its high OMR ratio, linear field dependence and simple structure.

  4. Magnetic mesocrystal-assisted magnetoresistance in manganite.

    PubMed

    Yang, Jan-Chi; He, Qing; Zhu, Yuan-Min; Lin, Jheng-Cyuan; Liu, Heng-Jui; Hsieh, Ying-Hui; Wu, Ping-Chun; Chen, Yen-Lin; Lee, Shang-Fan; Chin, Yi-Ying; Lin, Hong-Ji; Chen, Chien-Te; Zhan, Qian; Arenholz, Elke; Chu, Ying-Hao

    2014-11-12

    Mesocrystal, a new class of crystals as compared to conventional and well-known single crystals and polycrystalline systems, has captured significant attention in the past decade. Recent studies have been focused on the advance of synthesis mechanisms as well as the potential on device applications. In order to create further opportunities upon functional mesocrystals, we fabricated a self-assembled nanocomposite composed of magnetic CoFe2O4 mesocrystal in Sr-doped manganites. This combination exhibits intriguing structural and magnetic tunabilities. Furthermore, the antiferromagnetic coupling of the mesocrystal and matrix has induced an additional magnetic perturbation to spin-polarized electrons, resulting in a significantly enhanced magnetoresistance in the nanocomposite. Our work demonstrates a new thought toward the enhancement of intrinsic functionalities assisted by mesocrystals and advanced design of novel mesocrystal-embedded nanocomposites.

  5. Anomalous magnetoresistance in magnetized topological insulator cylinders

    NASA Astrophysics Data System (ADS)

    Siu, Zhuo Bin; Jalil, Mansoor B. A.

    2015-05-01

    The close coupling between the spin and momentum degrees of freedom in topological insulators (TIs) presents the opportunity for the control of one to manipulate the other. The momentum can, for example, be confined on a curved surface and the spin influenced by applying a magnetic field. In this work, we study the surface states of a cylindrical TI magnetized in the x direction perpendicular to the cylindrical axis lying along the z direction. We show that a large magnetization leads to an upwards bending of the energy bands at small |kz| . The bending leads to an anomalous magnetoresistance where the transmission between two cylinders magnetized in opposite directions is higher than when the cylinders are magnetized at intermediate angles with respect to each other.

  6. Anomalous magnetoresistance in magnetized topological insulator cylinders

    SciTech Connect

    Siu, Zhuo Bin; Jalil, Mansoor B. A.

    2015-05-07

    The close coupling between the spin and momentum degrees of freedom in topological insulators (TIs) presents the opportunity for the control of one to manipulate the other. The momentum can, for example, be confined on a curved surface and the spin influenced by applying a magnetic field. In this work, we study the surface states of a cylindrical TI magnetized in the x direction perpendicular to the cylindrical axis lying along the z direction. We show that a large magnetization leads to an upwards bending of the energy bands at small |k{sub z}|. The bending leads to an anomalous magnetoresistance where the transmission between two cylinders magnetized in opposite directions is higher than when the cylinders are magnetized at intermediate angles with respect to each other.

  7. Robustness of the magnetoresistance of nanoparticle arrays

    NASA Astrophysics Data System (ADS)

    Estévez, V.; Bascones, E.

    2011-08-01

    Recent work has found that the interplay between spin accumulation and Coulomb blockade in nanoparticle arrays results in peaky I-V and tunneling magnetoresistance (TMR) curves and in huge values of the TMR. We analyze how these effects are influenced by a polarization asymmetry of the electrodes, the dimensionality of the array, the temperature, resistance, or charge disorder, and long-range interactions. We show that the magnitude and voltage dependence of the TMR do not change with the dimensionality of the array or the presence of junction resistance disorder. A different polarization in the electrodes modifies the peak shape in the I-V and TMR curves but not their order of magnitude. Increasing the temperature or length of the interaction reduces to some extent the size of the peaks, the reduction being due to long-range interactions that are smaller in longer arrays. Charge disorder should be avoided to observe large TMR values.

  8. Anisotropic magnetoresistance in manganites: experiment and theory.

    PubMed

    Fuhr, J D; Granada, M; Steren, L B; Alascio, B

    2010-04-14

    We present measurements of the anisotropic magnetoresistance (AMR) of La(0.75)Sr(0.25)MnO(3) films deposited on (001) SrTiO(3) substrates, and a model that describes the experimental results. The model, based on the electronic structure of manganites plus the spin-orbit coupling, correctly accounts for the dependence of the AMR on the direction of the current to the crystalline axes. We measure an AMR of the order of 10(-3) for the current I parallel to the [100] axis of the crystal and vanishing AMR for I , in agreement with the model predictions. Further, we calculate the planar Hall effect and show its connection to AMR.

  9. Magnetocardiography with sensors based on giant magnetoresistance

    NASA Astrophysics Data System (ADS)

    Pannetier-Lecoeur, M.; Parkkonen, L.; Sergeeva-Chollet, N.; Polovy, H.; Fermon, C.; Fowley, C.

    2011-04-01

    Biomagnetic signals, mostly due to the electrical activity in the body, are very weak and they can only be detected by the most sensitive magnetometers, such as Superconducting Quantum Interference Devices (SQUIDs). We report here biomagnetic recordings with hybrid sensors based on Giant MagnetoResistance (GMR). We recorded magnetic signatures of the electric activity of the human heart (magnetocardiography) in healthy volunteers. The P-wave and QRS complex, known from the corresponding electric recordings, are clearly visible in the recordings after an averaging time of about 1 min. Multiple recordings at different locations over the chest yielded a dipolar magnetic field map and allowed localizing the underlying current sources. The sensitivity of the GMR-based sensors is now approaching that of SQUIDs and paves way for spin electronics devices for functional imaging of the body.

  10. Magnetoresistive sensors for surveillance and remote sensing

    NASA Astrophysics Data System (ADS)

    Dalichaouch, Yacine; Perry, Alexander R.; Whitecotton, Brian W.; Moeller, Charles R.; Czipott, Peter V.

    2001-02-01

    Quantum Magnetics (QM) has developed a sensing array using small and lightweight magnetoresistive (MR) sensors. These sensors, which operate at room temperature with high sensitivity and wide bandwidth, provide new operational performance capabilities. The wide bandwidth makes them ideal for both passive and active detection techniques. Using a DSP-based electronics developed by QM, we have been able to operate these sensors with an unprecedented noise performance at low frequencies. Recent tests using an MR room temperature gradiometer show that its resolution equals that of a fluxgate room-temperature gradiometer we have previously developed. These results represent an important development for both attended and unattended ground sensor applications since MR sensors cost about ten times less than fluxgate sensors.

  11. Low field magnetoresistance of gadolinium nanowire

    SciTech Connect

    Chakravorty, Manotosh Raychaudhuri, A. K.

    2014-02-07

    We report low field (μ{sub 0}H < 0.2 T) magnetoresistance (MR) studies on a single Gd nanowire patterned from a nano-structured film (average grain size ∼ 35 nm) by focused ion beam. For comparison, we did similar MR measurements on a polycrystalline sample with large crystallographic grains (∼4 μm). It is observed that in the low field region where the MR is due to motion of magnetic domains, the MR in the large grained sample shows a close relation to the characteristic temperature dependent magnetocrystalline anisotropy including a sharp rise in MR at the spin reorientation transition at 235 K. In stark contrast, in the nanowire, the MR shows complete suppression of the above behaviours and it shows predominance of the grain boundary and spin disorder controlling the domain response.

  12. ION SWITCH

    DOEpatents

    Cook, B.

    1959-02-10

    An ion switch capable of transferring large magnitudes of power is described. An ion switch constructed in accordance with the invention includes a pair of spaced control electrodes disposed in a highly evacuated region for connection in a conventional circuit to control the passing of power therethrough. A controllable ionic conduction path is provided directiy between the control electrodes by a source unit to close the ion switch. Conventional power supply means are provided to trigger the source unit and control the magnitude, durations and pulse repetition rate of the aforementioned ionic conduction path.

  13. Magnetoresistive properties of nanostructured magnetic metals, manganites, and magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Solin, N. I.; Romashev, L. N.; Naumov, S. V.; Saranin, A. A.; Zotov, A. V.; Olyanich, D. A.; Kotlyar, V. G.; Utas, O. A.

    2016-02-01

    We consider methods for controlling magnetoresistive parameters of magnetic metal superlattices, manganites, and magnetic semiconductors. By reducing the thickness of ferromagnetic layers in superlattices (e.g., Fe layers in Fe/Cr superlattices), it is possible to form superparamagnetic clustered-layered nanostructures with a magnetoresistance weakly depending on the direction of the external magnetic field, which is very important for applications of such type of materials. Producing Mn vacancies and additionally annealing lanthanum manganites in the oxygen atmosphere, it is possible to increase their magnetoresistance by more than four orders of magnitude. By changing the thickness of p- n junction in the structure of ferromagnetic semiconductors, their magnetoresistance can be increased by 2-3 orders of magnitude.

  14. The suppression of the large magnetoresistance in thin WTe2

    NASA Astrophysics Data System (ADS)

    Shen, Jie; Woods, John; Cha, Judy

    The layered nature of WTe2 suggests the possibility of making a single layer WTe2 memory device that exploits the recently observed large magnetoresistance. Presently, the origin of the magnetoresistance is attributed to the charge balance between the electron and hole carriers, yet the exact underlying physical mechanism is unclear. Here we show a systematic suppression of the large magnetoresistance, as well as turn-on temperature, with decreasing thickness of WTe2. We attribute the thickness-dependent transport properties to undesirable parasitic effects that become dominant in thin films of WTe2. Our results highlight the increasing importance of characterizing the parasitic effects for 2D layered materials in a single- to a few-layer thick limit. Finally, our observations support the hypothesis that the origin of the large magnetoresistance may be due to the charge balance between the electron and the hole carriers.

  15. Recent Developments of Magnetoresistive Sensors for Industrial Applications

    PubMed Central

    Jogschies, Lisa; Klaas, Daniel; Kruppe, Rahel; Rittinger, Johannes; Taptimthong, Piriya; Wienecke, Anja; Rissing, Lutz; Wurz, Marc Christopher

    2015-01-01

    The research and development in the field of magnetoresistive sensors has played an important role in the last few decades. Here, the authors give an introduction to the fundamentals of the anisotropic magnetoresistive (AMR) and the giant magnetoresistive (GMR) effect as well as an overview of various types of sensors in industrial applications. In addition, the authors present their recent work in this field, ranging from sensor systems fabricated on traditional substrate materials like silicon (Si), over new fabrication techniques for magnetoresistive sensors on flexible substrates for special applications, e.g., a flexible write head for component integrated data storage, micro-stamping of sensors on arbitrary surfaces or three dimensional sensing under extreme conditions (restricted mounting space in motor air gap, high temperatures during geothermal drilling). PMID:26569263

  16. Recent Developments of Magnetoresistive Sensors for Industrial Applications.

    PubMed

    Jogschies, Lisa; Klaas, Daniel; Kruppe, Rahel; Rittinger, Johannes; Taptimthong, Piriya; Wienecke, Anja; Rissing, Lutz; Wurz, Marc Christopher

    2015-11-12

    The research and development in the field of magnetoresistive sensors has played an important role in the last few decades. Here, the authors give an introduction to the fundamentals of the anisotropic magnetoresistive (AMR) and the giant magnetoresistive (GMR) effect as well as an overview of various types of sensors in industrial applications. In addition, the authors present their recent work in this field, ranging from sensor systems fabricated on traditional substrate materials like silicon (Si), over new fabrication techniques for magnetoresistive sensors on flexible substrates for special applications, e.g., a flexible write head for component integrated data storage, micro-stamping of sensors on arbitrary surfaces or three dimensional sensing under extreme conditions (restricted mounting space in motor air gap, high temperatures during geothermal drilling).

  17. Quantum conductance in electrodeposited nanocontacts and magnetoresistance measurements

    NASA Astrophysics Data System (ADS)

    Elhoussine, F.; Encinas, A.; Mátéfi-Tempfli, S.; Piraux, L.

    2003-05-01

    We present conductance and magnetoresistance measurements in magnetic Ni-Ni and Co-Ni nanocontacts prepared by electrodeposition within the pores of a track-etched polymer membrane. At room temperature, Ni-Ni constrictions show broad quantization plateaus of conductance during their dissolution into units of e2/h, as expected for ferromagnetic ballistic nanocontacts. Additionally, positive and negative magnetoresistance has been measured in Co-Ni nanocontacts.

  18. Anomalous magnetoresistance in NiMnGa thin films

    NASA Astrophysics Data System (ADS)

    Golub, Vladimir O.; Vovk, Andriy Ya.; Malkinski, Leszek; O'Connor, Charles J.; Wang, Zhenjun; Tang, Jinke

    2004-10-01

    The origin of anomalous negative magnetoresistance and its temperature dependence in polycrystalline Ni -Mn-Ga films prepared by pulse laser deposition was studied. The investigation of structural, transports, magnetic, and ferromagnetic resonance properties of the films suggests contributions of different mechanisms in magnetotransport. At low magnetic fields the main contribution to magnetoresistance is due to the transport between the areas with different orientation of magnetic moments, while at high fields it is an electron scattering of in spin-disordered areas.

  19. Electromechanical switch

    NASA Astrophysics Data System (ADS)

    Antonuzzi, Anthony P.; Carignan, Donald J.

    1986-06-01

    A hardened electromechanical switch is disclosed. When appropriate electrical contacts and pick-offs are aligned, four switches close. The possible number of switch combinations selectable are 4095 based upon a base eight counting system. The switch has a counter section and a memory section. The counter section uses an odometer like device based upon octal. Each counter wheel of the counter section has an electrical pick-off that interacts with the memory section. In the memory section, a plurality of octal numbers, four, are entered into and locked thereon such that each counter set disk, four, therein has one octal number thereon. Electrical contacts are placed on the counter set disks of the memory section and these touch the pick-offs of the counter wheels which will simultaneously close on the four contacts of the counter set disk in only one of the 4095 combinations noted above.

  20. Acceleration switch

    DOEpatents

    Abbin, J.P. Jr.; Devaney, H.F.; Hake, L.W.

    1979-08-29

    The disclosure relates to an improved integrating acceleration switch of the type having a mass suspended within a fluid filled chamber, with the motion of the mass initially opposed by a spring and subsequently not so opposed.

  1. Acceleration switch

    DOEpatents

    Abbin, Jr., Joseph P.; Devaney, Howard F.; Hake, Lewis W.

    1982-08-17

    The disclosure relates to an improved integrating acceleration switch of the type having a mass suspended within a fluid filled chamber, with the motion of the mass initially opposed by a spring and subsequently not so opposed.

  2. Large, Tunable Magnetoresistance in Nonmagnetic III-V Nanowires.

    PubMed

    Li, Sichao; Luo, Wei; Gu, Jiangjiang; Cheng, Xiang; Ye, Peide D; Wu, Yanqing

    2015-12-01

    Magnetoresistance, the modulation of resistance by magnetic fields, has been adopted and continues to evolve in many device applications including hard-disk, memory, and sensors. Magnetoresistance in nonmagnetic semiconductors has recently raised much attention and shows great potential due to its large magnitude that is comparable or even larger than magnetic materials. However, most of the previous work focus on two terminal devices with large dimensions, typically of micrometer scales, which severely limit their performance potential and more importantly, scalability in commercial applications. Here, we investigate magnetoresistance in the impact ionization region in InGaAs nanowires with 20 nm diameter and 40 nm gate length. The deeply scaled dimensions of these nanowires enable high sensibility with less power consumption. Moreover, in these three terminal devices, the magnitude of magnetoresistance can be tuned by the transverse electric field controlled by gate voltage. Large magnetoresistance between 100% at room temperature and 2000% at 4.3 K can be achieved at 2.5 T. These nanoscale devices with large magnetoresistance offer excellent opportunity for future high-density large-scale magneto-electric devices using top-down fabrication approaches, which are compatible with commercial silicon platform. PMID:26561728

  3. Magnetoresistive polyaniline-silicon carbide metacomposites: plasma frequency determination and high magnetic field sensitivity.

    PubMed

    Gu, Hongbo; Guo, Jiang; Khan, Mojammel Alam; Young, David P; Shen, T D; Wei, Suying; Guo, Zhanhu

    2016-07-20

    The Drude model modified by Debye relaxation time was introduced to determine the plasma frequency (ωp) in the surface initiated polymerization (SIP) synthesized β-silicon carbide (β-SiC)/polyaniline (PANI) metacomposites. The calculated plasma frequency for these metacomposites with different loadings of β-SiC nanoparticles was ranging from 6.11 × 10(4) to 1.53 × 10(5) rad s(-1). The relationship between the negative permittivity and plasma frequency indicates the existence of switching frequency, at which the permittivity was changed from negative to positive. More interestingly, the synthesized non-magnetic metacomposites, observed to follow the 3-dimensional (3-D) Mott variable range hopping (VRH) electrical conduction mechanism, demonstrated high positive magnetoresistance (MR) values of up to 57.48% and high MR sensitivity at low magnetic field regimes.

  4. Multiplex giant magnetoresistive biosensor microarrays identify interferon-associated autoantibodies in systemic lupus erythematosus

    NASA Astrophysics Data System (ADS)

    Lee, Jung-Rok; Haddon, D. James; Wand, Hannah E.; Price, Jordan V.; Diep, Vivian K.; Hall, Drew A.; Petri, Michelle; Baechler, Emily C.; Balboni, Imelda M.; Utz, Paul J.; Wang, Shan X.

    2016-06-01

    High titer, class-switched autoantibodies are a hallmark of systemic lupus erythematosus (SLE). Dysregulation of the interferon (IFN) pathway is observed in individuals with active SLE, although the association of specific autoantibodies with chemokine score, a combined measurement of three IFN-regulated chemokines, is not known. To identify autoantibodies associated with chemokine score, we developed giant magnetoresistive (GMR) biosensor microarrays, which allow the parallel measurement of multiple serum antibodies to autoantigens and peptides. We used the microarrays to analyze serum samples from SLE patients and found individuals with high chemokine scores had significantly greater reactivity to 13 autoantigens than individuals with low chemokine scores. Our findings demonstrate that multiple autoantibodies, including antibodies to U1-70K and modified histone H2B tails, are associated with IFN dysregulation in SLE. Further, they show the microarrays are capable of identifying autoantibodies associated with relevant clinical manifestations of SLE, with potential for use as biomarkers in clinical practice.

  5. Magnetoresistive polyaniline-silicon carbide metacomposites: plasma frequency determination and high magnetic field sensitivity.

    PubMed

    Gu, Hongbo; Guo, Jiang; Khan, Mojammel Alam; Young, David P; Shen, T D; Wei, Suying; Guo, Zhanhu

    2016-07-20

    The Drude model modified by Debye relaxation time was introduced to determine the plasma frequency (ωp) in the surface initiated polymerization (SIP) synthesized β-silicon carbide (β-SiC)/polyaniline (PANI) metacomposites. The calculated plasma frequency for these metacomposites with different loadings of β-SiC nanoparticles was ranging from 6.11 × 10(4) to 1.53 × 10(5) rad s(-1). The relationship between the negative permittivity and plasma frequency indicates the existence of switching frequency, at which the permittivity was changed from negative to positive. More interestingly, the synthesized non-magnetic metacomposites, observed to follow the 3-dimensional (3-D) Mott variable range hopping (VRH) electrical conduction mechanism, demonstrated high positive magnetoresistance (MR) values of up to 57.48% and high MR sensitivity at low magnetic field regimes. PMID:27386820

  6. Multiplex giant magnetoresistive biosensor microarrays identify interferon-associated autoantibodies in systemic lupus erythematosus

    PubMed Central

    Lee, Jung-Rok; Haddon, D. James; Wand, Hannah E.; Price, Jordan V.; Diep, Vivian K.; Hall, Drew A.; Petri, Michelle; Baechler, Emily C.; Balboni, Imelda M.; Utz, Paul J.; Wang, Shan X.

    2016-01-01

    High titer, class-switched autoantibodies are a hallmark of systemic lupus erythematosus (SLE). Dysregulation of the interferon (IFN) pathway is observed in individuals with active SLE, although the association of specific autoantibodies with chemokine score, a combined measurement of three IFN-regulated chemokines, is not known. To identify autoantibodies associated with chemokine score, we developed giant magnetoresistive (GMR) biosensor microarrays, which allow the parallel measurement of multiple serum antibodies to autoantigens and peptides. We used the microarrays to analyze serum samples from SLE patients and found individuals with high chemokine scores had significantly greater reactivity to 13 autoantigens than individuals with low chemokine scores. Our findings demonstrate that multiple autoantibodies, including antibodies to U1-70K and modified histone H2B tails, are associated with IFN dysregulation in SLE. Further, they show the microarrays are capable of identifying autoantibodies associated with relevant clinical manifestations of SLE, with potential for use as biomarkers in clinical practice. PMID:27279139

  7. Study of the magnetoresistance of magnetic film modified by using ion beams

    SciTech Connect

    Suk, J.; Jeon, I.; Kim, T.; Lee, J.; Song, J.

    2011-04-01

    We have studied the magnetoresistance (MR) of locally modified Cu(20 nm)/AlO{sub x}(1 nm)/NiFe(20 nm)/AlO{sub x}(1 nm)/Cu(3 nm) on a Si substrate. The local modification was performed by irradiating Cu ion beams on a photoresist wire-covered film. After irradiation, the hysteresis loop shows step-like behavior at a specific ion dose, which is caused by the difference in the switching fields of the irradiated and unirradiated region of the film. Because of this, plateau-like behavior is observed in the transverse MR measurement of the film with 1 x 10{sup 16} ions/cm{sup 2}. A cross-sectional transmission electron microscopy image shows the irradiation induced intermixing of the magnetic layer with nonmagnetic layers.

  8. Effects of Cigarette Smoke, Cessation, and Switching to Two Heat-Not-Burn Tobacco Products on Lung Lipid Metabolism in C57BL/6 and Apoe-/- Mice-An Integrative Systems Toxicology Analysis.

    PubMed

    Titz, Bjoern; Boué, Stéphanie; Phillips, Blaine; Talikka, Marja; Vihervaara, Terhi; Schneider, Thomas; Nury, Catherine; Elamin, Ashraf; Guedj, Emmanuel; Peck, Michael J; Schlage, Walter K; Cabanski, Maciej; Leroy, Patrice; Vuillaume, Gregory; Martin, Florian; Ivanov, Nikolai V; Veljkovic, Emilija; Ekroos, Kim; Laaksonen, Reijo; Vanscheeuwijck, Patrick; Peitsch, Manuel C; Hoeng, Julia

    2016-02-01

    The impact of cigarette smoke (CS), a major cause of lung diseases, on the composition and metabolism of lung lipids is incompletely understood. Here, we integrated quantitative lipidomics and proteomics to investigate exposure effects on lung lipid metabolism in a C57BL/6 and an Apolipoprotein E-deficient (Apoe(-/-)) mouse study. In these studies, mice were exposed to high concentrations of 3R4F reference CS, aerosol from potential modified risk tobacco products (MRTPs) or filtered air (Sham) for up to 8 months. The 2 assessed MRTPs, the prototypical MRTP for C57BL/6 mice and the Tobacco Heating System 2.2 for Apoe(-/-) mice, utilize "heat-not-burn" technologies and were each matched in nicotine concentrations to the 3R4F CS. After 2 months of CS exposure, some groups were either switched to the MRTP or underwent cessation. In both mouse strains, CS strongly affected several categories of lung lipids and lipid-related proteins. Candidate surfactant lipids, surfactant proteins, and surfactant metabolizing proteins were increased. Inflammatory eicosanoids, their metabolic enzymes, and several ceramide classes were elevated. Overall, CS induced a coordinated lipid response controlled by transcription regulators such as SREBP proteins and supported by other metabolic adaptations. In contrast, most of these changes were absent in the mice exposed to the potential MRTPs, in the cessation group, and the switching group. Our findings demonstrate the complex biological response of the lungs to CS exposure and support the benefits of cessation or switching to a heat-not-burn product using a design such as those employed in this study.

  9. Optical switch

    DOEpatents

    Reedy, Robert P.

    1987-01-01

    An optical switching device (10) is provided whereby light from a first glass fiber (16) or a second glass fiber (14) may be selectively transmitted into a third glass fiber (18). Each glass fiber is provided with a focusing and collimating lens system (26, 28, 30). In one mode of operation, light from the first glass fiber (16) is reflected by a planar mirror (36) into the third glass fiber (18). In another mode of operation, light from the second glass fiber (14) passes directly into the third glass fiber (18). The planar mirror (36) is attached to a rotatable table (32) which is rotated to provide the optical switching.

  10. Giant magnetoresistance materials for magnetic recording technology

    SciTech Connect

    Heffner, R.H.; Adams, C.D.; Brosha, E.L.

    1997-12-01

    This is the final report of a two-year, Laboratory Directed Research and Development (LDRD) project at Los Alamos National Laboratory (LANL). This work focused on a class of transition-metal-oxide (TMO) materials (LaMnO{sub 3} doped with Ca, Ba, or Sr) that exhibits an insulator-to-metal transition near a ferromagnetic phase transition temperature. This yields a very large magnetoresistance; thus these materials may have important uses as magnetic sensors in a variety of applications, ranging from automobiles to read heads for magnetic storage. In addition, the transport current in the ferromagnetic state is likely to be very highly polarized, which means that additional device applications using the phenomena of spin-polarized tunneling can be envisioned. Use of these materials as magnetic sensors depends upon learning to control the synthesis parameters (principally temperature, pressure and composition) to achieve a specific carrier concentration and/or mobility. A second challenge is the high magnetic fields ({ge}1 Tesla) currently required to achieve a large change in resistance. The authors began an investigation of two novel approaches to this field-sensitivity problem, involving the development of multilayer structures of the TMO materials. Finally, they began to explore the use of epitaxial strain as a means of changing the transport properties in thin-film multilayers.

  11. Noncontact vibration measurements using magnetoresistive sensing elements

    NASA Astrophysics Data System (ADS)

    Tomassini, R.; Rossi, G.

    2016-06-01

    Contactless instrumentations is more and more used in turbomachinery testing thanks to the non-intrusive character and the possibility to monitor all the components of the machine at the same time. Performances of blade tip timing (BTT) measurement systems, used for noncontact turbine blade vibration measurements, in terms of uncertainty and resolution are strongly affected by sensor characteristics and processing methods. The sensors used for BTT generate pulses, used for precise measurements of turbine blades time of arrival. Nowadays proximity sensors used in this application are based on optical, capacitive, eddy current and microwave measuring principle. Pressure sensors has been also tried. This paper summarizes the results achieved using a novel instrumentation based on the magnetoresistive sensing elements. The characterization of the novel probe has been already published. The measurement system was validated in test benches and in a real jet-engine comparing different sensor technologies. The whole instrumentation was improved. The work presented in this paper focuses on the current developments. In particular, attention is given to the data processing software and new sensor configurations.

  12. Positive magnetoresistance in Ca-doped cobaltites

    SciTech Connect

    Zhou, S. M. Li, Y.; Guo, Y. Q.; Zhao, J. Y.; Shi, L.

    2014-12-08

    Transport properties of polycrystalline La{sub 1−x}Ca{sub x}CoO{sub 3} (0.10 ≤ x ≤ 0.25) are systemically studied in this work. Three types of magnetoresistance (MR) effects are found in the Ca-doped cobaltites. Two negative MRs appear around high-temperature ferromagnetic transition and at low temperatures, which correspond to the conventional MR due to the field-induced suppression of spin-disorder scattering and the intergranular giant-MR due to spin-dependent transport between the ferromagnetic clusters, respectively. More interestingly, another exotic positive MR emerges at intermediate temperature region, which had not been previously reported in Sr- and Ba-doped cobaltites. It is found that this positive MR is associated with an abnormally magnetic transition and increases with the increase of x. For x = 0.25, the MR at low temperatures is dominated by the positive one, which is isotropic and nearly linear with the magnetic field. The possible origin of the positive MR in the Ca-doped cobaltites is discussed.

  13. Planar Hall magnetoresistive aptasensor for thrombin detection.

    PubMed

    Sinha, B; Ramulu, T S; Kim, K W; Venu, R; Lee, J J; Kim, C G

    2014-09-15

    The use of aptamer-based assays is an emerging and attractive approach in disease research and clinical diagnostics. A sensitive aptamer-based sandwich-type sensor is presented to detect human thrombin using a planar Hall magnetoresistive (PHR) sensor in cooperation with superparamagnetic labels. A PHR sensor has the great advantages of a high signal-to-noise ratio, a small offset voltage and linear response in the low-field region, allowing it to act as a high-resolution biosensor. In the system presented here, the sensor has an active area of 50 µm × 50 µm with a 10-nm gold layer deposited onto the sensor surface prior to the binding of thiolated DNA primary aptamer. A polydimethylsiloxane well of 600-µm radius and 1-mm height was prepared around the sensor surface to maintain the same specific area and volume for each sensor. The sensor response was traced in real time upon the addition of streptavidin-functionalized magnetic labels on the sensor. A linear response to the thrombin concentration in the range of 86 pM-8.6 µM and a lower detection limit down to 86 pM was achieved by the proposed present method with a sample volume consumption of 2 µl. The proposed aptasensor has a strong potential for application in clinical diagnosis.

  14. Spin Hall Magnetoresistance in Metallic Bilayers.

    PubMed

    Kim, Junyeon; Sheng, Peng; Takahashi, Saburo; Mitani, Seiji; Hayashi, Masamitsu

    2016-03-01

    Spin Hall magnetoresistance (SMR) is studied in metallic bilayers that consist of a heavy metal (HM) layer and a ferromagnetic metal (FM) layer. We find a nearly tenfold increase of SMR in W/CoFeB compared to previously studied HM/ferromagnetic insulator systems. The SMR increases with decreasing temperature despite the negligible change in the W layer resistivity. A model is developed to account for the absorption of the longitudinal spin current to the FM layer, one of the key characteristics of a metallic ferromagnet. We find that the model not only quantitatively describes the HM layer thickness dependence of SMR, allowing accurate estimation of the spin Hall angle and the spin diffusion length of the HM layer, but also can account for the temperature dependence of SMR by assuming a temperature dependent spin polarization of the FM layer. These results illustrate the unique role a metallic ferromagnetic layer plays in defining spin transmission across the HM/FM interface. PMID:26991195

  15. Scanning magnetoresistance microscopy of atom chips.

    PubMed

    Volk, M; Whitlock, S; Wolff, C H; Hall, B V; Sidorov, A I

    2008-02-01

    Surface based geometries of microfabricated wires or patterned magnetic films can be used to magnetically trap and manipulate ultracold neutral atoms or Bose-Einstein condensates. We investigate the magnetic properties of such atom chips using a scanning magnetoresistive (MR) microscope with high spatial resolution and high field sensitivity. By comparing MR scans of a permanent magnetic atom chip to field profiles obtained using ultracold atoms, we show that MR sensors are ideally suited to observe small variations of the magnetic field caused by imperfections in the wires or magnetic materials which ultimately lead to fragmentation of ultracold atom clouds. Measurements are also provided for the magnetic field produced by a thin current-carrying wire with small geometric modulations along the edge. Comparisons of our measurements with a full numeric calculation of the current flow in the wire and the subsequent magnetic field show excellent agreement. Our results highlight the use of scanning MR microscopy as a convenient and powerful technique for precisely characterizing the magnetic fields produced near the surface of atom chips.

  16. Linear unsaturating magnetoresistance in disordered systems

    NASA Astrophysics Data System (ADS)

    Lai, Ying Tong; Lara, Silvia; Love, Cameron; Ramakrishnan, Navneeth; Adam, Shaffique

    Theoretical works have shown that disordered systems exhibit classical magnetoresistance (MR). In this talk, we examine a variety of experimental systems that observe linear MR at high magnetic fields, including silver chalcogenides, graphene, graphite and Weyl semimetals. We show that a careful analysis of the magnitude of the MR, as well as the field strength at which the MR changes from quadratic to linear, reveal important properties of the system, such as the ratio of the root-mean-square fluctuations in the carrier density and the average carrier density. By looking at other properties such as the zero-field mobility, we show that this carrier density inhomogeneity is consistent with what is known about the microscopic impurities in these experiments. The application of this disorder-induced MR to a variety of different experimental scenarios underline the universality of these theoretical models. This work is supported by the Singapore National Research Foundation (NRF-NRFF2012-01) and the Singapore Ministry of Education and Yale-NUS College through Grant Number R-607-265-01312.

  17. Nodal Quasiparticle in Pseudogapped Colossal Magnetoresistive Manganites

    SciTech Connect

    Mannella, N.

    2010-06-02

    A characteristic feature of the copper oxide high-temperature superconductors is the dichotomy between the electronic excitations along the nodal (diagonal) and antinodal (parallel to the Cu-O bonds) directions in momentum space, generally assumed to be linked to the d-wave symmetry of the superconducting state. Angle-resolved photoemission measurements in the superconducting state have revealed a quasiparticle spectrum with a d-wave gap structure that exhibits a maximum along the antinodal direction and vanishes along the nodal direction. Subsequent measurements have shown that, at low doping levels, this gap structure persists even in the high-temperature metallic state, although the nodal points of the superconducting state spread out in finite Fermi arcs. This is the so-called pseudogap phase, and it has been assumed that it is closely linked to the superconducting state, either by assigning it to fluctuating superconductivity or by invoking orders which are natural competitors of d-wave superconductors. Here we report experimental evidence that a very similar pseudogap state with a nodal-antinodal dichotomous character exists in a system that is markedly different from a superconductor: the ferromagnetic metallic groundstate of the colossal magnetoresistive bilayer manganite La{sub 1.2}Sr{sub 1.8}Mn{sub 2}O{sub 7}. Our findings therefore cast doubt on the assumption that the pseudogap state in the copper oxides and the nodal-antinodal dichotomy are hallmarks of the superconductivity state.

  18. Nodal quasiparticle in pseudogapped colossal magnetoresistive manganites

    NASA Astrophysics Data System (ADS)

    Mannella, N.; Yang, W. L.; Zhou, X. J.; Tanaka, K.; Zheng, H.; Mitchell, J. F.; Zaanen, J.; Devereaux, T. P.; Nagaosa, N.; Hussain, Z.; Shen, Z. X.

    2006-03-01

    In this talk, the result of a recent angle-resolved photoemission spectroscopy (ARPES) investigation which allowed elucidating the controversial nature of the ferromagnetic metallic groundstate in the prototypical colossal magnetoresistive manganite bilayer compound La1.2Sr1.8Mn2O7 will be discussed [1]. The distribution of spectral weight in momentum space exhibits a nodal--antinodal dichotomous character. Quasiparticle excitations have been detected for the first time along the nodal direction (i.e. diagonal), and they are found to determine the metallic transport properties of this compound. The weight of the quasiparticle peak diminishes rapidly while crossing over to the antinodal (i.e. parallel to the Mn--O bonds) parallel sections of the Fermi surface, with the spectra strongly resembling those found in heavily underdoped cuprates high temperature superconductors (HTSC) such as Ca2-xNaxCuO2Cl2 [2]. This dichotomy between the electronic excitations along the nodal and antinodal directions in momentum space was so far considered a characteristic unique feature of the copper oxide HTSC. These findings therefore cast doubt on the assumption that the pseudogap state in the cuprate HTSC and the nodal-antinodal dichotomy are hallmarks of the superconductivity state. [1] N. Mannella et al., Nature 438, 474 (2005) [2] K. M Shen et al., Science 307, 901 (2005).

  19. Lateral flow immunoassay using magnetoresistive sensors

    NASA Astrophysics Data System (ADS)

    Taton, Kristin; Johnson, Diane; Guire, Patrick; Lange, Erik; Tondra, Mark

    2009-05-01

    Magnetic particles have been adapted for use as labels in biochemical lateral flow strip tests. Standard gold particle lateral flow assays are generally qualitative; however, with magnetic particles, quantitative results can be obtained by using electronic detection systems with giant magnetoresistive (GMR) sensors. As described here, these small integrated sensor chips can detect the presence of magnetic labels in capture spots whose volume is approximately 150 μm×150 μm×150 μm. The range of linear detection is better than two orders of magnitude; the total range is up to four orders of magnitude. The system was demonstrated with both indirect and sandwich enzyme-linked immunosorbent assays (ELISAs) for protein detection of rabbit IgG and interferon-γ, respectively, achieving detection of 12 pg/ml protein. Ultimately, the goal is for the detector to be fully integrated into the lateral flow strip backing to form a single consumable item that is interrogated by a handheld electronic reader.

  20. Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode

    NASA Astrophysics Data System (ADS)

    Hashimoto, T.; Kamikawa, S.; Soriano, D.; Pedersen, J. G.; Roche, S.; Haruyama, J.

    2014-11-01

    Using magnetic rare-metals for spintronic devices is facing serious problems for the environmental contamination and the limited material-resource. In contrast, by fabricating ferromagnetic graphene nanopore arrays (FGNPAs) consisting of honeycomb-like array of hexagonal nanopores with hydrogen-terminated zigzag-type atomic structure edges, we reported observation of polarized electron spins spontaneously driven from the pore edge states, resulting in rare-metal-free flat-energy-band ferromagnetism. Here, we demonstrate observation of tunneling magnetoresistance (TMR) behaviors on the junction of cobalt/SiO2/FGNPA electrode, serving as a prototype structure for future rare-metal free TMR devices using magnetic graphene electrodes. Gradual change in TMR ratios is observed across zero-magnetic field, arising from specified alignment between pore-edge- and cobalt-spins. The TMR ratios can be controlled by applying back-gate voltage and by modulating interpore distance. Annealing the SiO2/FGNPA junction also drastically enhances TMR ratios up to ˜100%.

  1. Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode

    SciTech Connect

    Hashimoto, T.; Kamikawa, S.; Haruyama, J.; Soriano, D.; Pedersen, J. G.; Roche, S.

    2014-11-03

    Using magnetic rare-metals for spintronic devices is facing serious problems for the environmental contamination and the limited material-resource. In contrast, by fabricating ferromagnetic graphene nanopore arrays (FGNPAs) consisting of honeycomb-like array of hexagonal nanopores with hydrogen-terminated zigzag-type atomic structure edges, we reported observation of polarized electron spins spontaneously driven from the pore edge states, resulting in rare-metal-free flat-energy-band ferromagnetism. Here, we demonstrate observation of tunneling magnetoresistance (TMR) behaviors on the junction of cobalt/SiO{sub 2}/FGNPA electrode, serving as a prototype structure for future rare-metal free TMR devices using magnetic graphene electrodes. Gradual change in TMR ratios is observed across zero-magnetic field, arising from specified alignment between pore-edge- and cobalt-spins. The TMR ratios can be controlled by applying back-gate voltage and by modulating interpore distance. Annealing the SiO{sub 2}/FGNPA junction also drastically enhances TMR ratios up to ∼100%.

  2. Stability of standing spin wave in permalloy thin film studied by anisotropic magnetoresistance effect

    NASA Astrophysics Data System (ADS)

    Yamanoi, K.; Yokotani, Y.; Cui, X.; Yakata, S.; Kimura, T.

    2015-12-01

    We have investigated the stability for the resonant spin precession under the strong microwave magnetic field by a specially developed detection method using the anisotropic magnetoresistance effect. The electrically separated excitation and detection circuits enable us to investigate the influence of the heating effect and the nonuniform spin dynamics independently. The large detecting current is found to induce the field shift of the resonant spectra because of the Joule heating. From the microwave power dependence, we found that the linear response regime for the standing spin wave is larger than that for the ferromagnetic resonance. This robust characteristic of the standing spin wave is an important advantage for the high power operation of the spin-wave device.

  3. Stability of standing spin wave in permalloy thin film studied by anisotropic magnetoresistance effect

    SciTech Connect

    Yamanoi, K.; Yokotani, Y.; Cui, X.; Yakata, S.; Kimura, T.

    2015-12-21

    We have investigated the stability for the resonant spin precession under the strong microwave magnetic field by a specially developed detection method using the anisotropic magnetoresistance effect. The electrically separated excitation and detection circuits enable us to investigate the influence of the heating effect and the nonuniform spin dynamics independently. The large detecting current is found to induce the field shift of the resonant spectra because of the Joule heating. From the microwave power dependence, we found that the linear response regime for the standing spin wave is larger than that for the ferromagnetic resonance. This robust characteristic of the standing spin wave is an important advantage for the high power operation of the spin-wave device.

  4. Magnetoresistance of heavy and light metal/ferromagnet bilayers

    SciTech Connect

    Avci, Can Onur; Garello, Kevin; Mendil, Johannes; Ghosh, Abhijit; Blasakis, Nicolas; Gabureac, Mihai; Trassin, Morgan; Fiebig, Manfred; Gambardella, Pietro

    2015-11-09

    We studied the magnetoresistance of normal metal (NM)/ferromagnet (FM) bilayers in the linear and nonlinear (current-dependent) regimes and compared it with the amplitude of the spin-orbit torques and thermally induced electric fields. Our experiments reveal that the magnetoresistance of the heavy NM/Co bilayers (NM = Ta, W, and Pt) is phenomenologically similar to the spin Hall magnetoresistance (SMR) of YIG/Pt, but has a much larger anisotropy of the order of 0.5%, which increases with the atomic number of the NM. This SMR-like behavior is absent in light NM/Co bilayers (NM = Ti and Cu), which present the standard anisotropic magnetoresistance expected from polycrystalline FM layers. In the Ta, W, and Pt/Co bilayers, we find an additional magnetoresistance directly proportional to the current and to the transverse component of the magnetization. This so-called unidirectional SMR, of the order of 0.005%, is largest in W and correlates with the amplitude of the antidamping spin-orbit torque. The unidirectional SMR is below the accuracy of our measurements in YIG/Pt.

  5. Switching Transistor

    NASA Astrophysics Data System (ADS)

    1981-01-01

    Westinghouse Electric Corporation's D60T transistors are used primarily as switching devices for controlling high power in electrical circuits. It enables reduction in the number and size of circuit components and promotes more efficient use of energy. Wide range of application from a popcorn popper to a radio frequency generator for solar cell production.

  6. EDITORIAL: Molecular switches at surfaces Molecular switches at surfaces

    NASA Astrophysics Data System (ADS)

    Weinelt, Martin; von Oppen, Felix

    2012-10-01

    In nature, molecules exploit interaction with their environment to realize complex functionalities on the nanometer length scale. Physical, chemical and/or biological specificity is frequently achieved by the switching of molecules between microscopically different states. Paradigmatic examples are the energy production in proton pumps of bacteria or the signal conversion in human vision, which rely on switching molecules between different configurations or conformations by external stimuli. The remarkable reproducibility and unparalleled fatigue resistance of these natural processes makes it highly desirable to emulate nature and develop artificial systems with molecular functionalities. A promising avenue towards this goal is to anchor the molecular switches at surfaces, offering new pathways to control their functional properties, to apply electrical contacts, or to integrate switches into larger systems. Anchoring at surfaces allows one to access the full range from individual molecular switches to self-assembled monolayers of well-defined geometry and to customize the coupling between molecules and substrate or between adsorbed molecules. Progress in this field requires both synthesis and preparation of appropriate molecular systems and control over suitable external stimuli, such as light, heat, or electrical currents. To optimize switching and generate function, it is essential to unravel the geometric structure, the electronic properties and the dynamic interactions of the molecular switches on surfaces. This special section, Molecular Switches at Surfaces, collects 17 contributions describing different aspects of this research field. They analyze elementary processes, both in single molecules and in ensembles of molecules, which involve molecular switching and concomitant changes of optical, electronic, or magnetic properties. Two topical reviews summarize the current status, including both challenges and achievements in the field of molecular switches on

  7. Anomalous electronic structure and magnetoresistance in TaAs2

    PubMed Central

    Luo, Yongkang; McDonald, R. D.; Rosa, P. F. S.; Scott, B.; Wakeham, N.; Ghimire, N. J.; Bauer, E. D.; Thompson, J. D.; Ronning, F.

    2016-01-01

    The change in resistance of a material in a magnetic field reflects its electronic state. In metals with weakly- or non-interacting electrons, the resistance typically increases upon the application of a magnetic field. In contrast, negative magnetoresistance may appear under some circumstances, e.g., in metals with anisotropic Fermi surfaces or with spin-disorder scattering and semimetals with Dirac or Weyl electronic structures. Here we show that the non-magnetic semimetal TaAs2 possesses a very large negative magnetoresistance, with an unknown scattering mechanism. Density functional calculations find that TaAs2 is a new topological semimetal [ℤ2 invariant (0;111)] without Dirac dispersion, demonstrating that a negative magnetoresistance in non-magnetic semimetals cannot be attributed uniquely to the Adler-Bell-Jackiw chiral anomaly of bulk Dirac/Weyl fermions. PMID:27271852

  8. Anomalous electronic structure and magnetoresistance in TaAs2.

    PubMed

    Luo, Yongkang; McDonald, R D; Rosa, P F S; Scott, B; Wakeham, N; Ghimire, N J; Bauer, E D; Thompson, J D; Ronning, F

    2016-01-01

    The change in resistance of a material in a magnetic field reflects its electronic state. In metals with weakly- or non-interacting electrons, the resistance typically increases upon the application of a magnetic field. In contrast, negative magnetoresistance may appear under some circumstances, e.g., in metals with anisotropic Fermi surfaces or with spin-disorder scattering and semimetals with Dirac or Weyl electronic structures. Here we show that the non-magnetic semimetal TaAs2 possesses a very large negative magnetoresistance, with an unknown scattering mechanism. Density functional calculations find that TaAs2 is a new topological semimetal [ℤ2 invariant (0;111)] without Dirac dispersion, demonstrating that a negative magnetoresistance in non-magnetic semimetals cannot be attributed uniquely to the Adler-Bell-Jackiw chiral anomaly of bulk Dirac/Weyl fermions. PMID:27271852

  9. Anomalous electronic structure and magnetoresistance in TaAs2

    DOE PAGES

    Luo, Yongkang; McDonald, R. D.; Rosa, P. F. S.; Scott, B.; Wakeham, N.; Ghimire, N. J.; Bauer, E. D.; Thompson, J. D.; Ronning, F.

    2016-01-01

    We report that the change in resistance of a material in a magnetic field reflects its electronic state. In metals with weakly- or non-interacting electrons, the resistance typically increases upon the application of a magnetic field. In contrast, negative magnetoresistance may appear under some circumstances, e.g., in metals with anisotropic Fermi surfaces or with spin-disorder scattering and semimetals with Dirac or Weyl electronic structures. Here we show that the non-magnetic semimetal TaAs2 possesses a very large negative magnetoresistance, with an unknown scattering mechanism. In conclusion, density functional calculations find that TaAs2 is a new topological semimetal [Z2 invariant (0;111)] withoutmore » Dirac dispersion, demonstrating that a negative magnetoresistance in non-magnetic semimetals cannot be attributed uniquely to the Adler-Bell-Jackiw chiral anomaly of bulk Dirac/Weyl fermions.« less

  10. Electronic structure basis for the extraordinary magnetoresistance in WTe2

    DOE PAGES

    Pletikosić, I.; Ali, Mazhar N.; Fedorov, A. V.; Cava, R. J.; Valla, T.

    2014-11-19

    The electronic structure basis of the extremely large magnetoresistance in layered non-magnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same size were found at the Fermi level, suggesting that carrier compensation should be considered the primary source of the effect. The material exhibits a highly anisotropic, quasi one-dimensional Fermi surface from which the pronounced anisotropy of the magnetoresistance follows. As a result, a change in the Fermi surface with temperature was found and a high-density-of-states band that may take over conduction at higher temperatures and cause the observed turn-on behavior ofmore » the magnetoresistance in WTe₂ was identified.« less

  11. Active control of magnetoresistance of organic spin valves using ferroelectricity

    PubMed Central

    Sun, Dali; Fang, Mei; Xu, Xiaoshan; Jiang, Lu; Guo, Hangwen; Wang, Yanmei; Yang, Wenting; Yin, Lifeng; Snijders, Paul C.; Ward, T. Z.; Gai, Zheng; Zhang, X.-G.; Lee, Ho Nyung; Shen, Jian

    2014-01-01

    Organic spintronic devices have been appealing because of the long spin lifetime of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance. Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer: the magnetoresistance of the spin valve depends strongly on the history of the bias voltage, which is correlated with the polarization of the ferroelectric layer; the magnetoresistance even changes sign when the electric polarization of the ferroelectric layer is reversed. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multi-state organic spin valves. PMID:25008155

  12. Active control of magnetoresistance of organic spin valves using ferroelectricity.

    PubMed

    Sun, Dali; Fang, Mei; Xu, Xiaoshan; Jiang, Lu; Guo, Hangwen; Wang, Yanmei; Yang, Wenting; Yin, Lifeng; Snijders, Paul C; Ward, T Z; Gai, Zheng; Zhang, X-G; Lee, Ho Nyung; Shen, Jian

    2014-01-01

    Organic spintronic devices have been appealing because of the long spin lifetime of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance. Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer: the magnetoresistance of the spin valve depends strongly on the history of the bias voltage, which is correlated with the polarization of the ferroelectric layer; the magnetoresistance even changes sign when the electric polarization of the ferroelectric layer is reversed. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multi-state organic spin valves. PMID:25008155

  13. Active control of magnetoresistance of organic spin valves using ferroelectricity

    NASA Astrophysics Data System (ADS)

    Shen, Jian

    Organic spintronic devices have been appealing because of the long spin lifetime of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance. Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer: the magnetoresistance of the spin valve depends strongly on the history of the bias voltage, which is correlated with the polarization of the ferroelectric layer; the magnetoresistance even changes sign when the electric polarization of the ferroelectric layer is reversed. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multi-state organic spin valves.

  14. Shubnikov - de Haas oscillations, weak antilocalization effect and large linear magnetoresistance in the putative topological superconductor LuPdBi

    PubMed Central

    Pavlosiuk, Orest; Kaczorowski, Dariusz; Wiśniewski, Piotr

    2015-01-01

    We present electronic transport and magnetic properties of single crystals of semimetallic half-Heusler phase LuPdBi, having theoretically predicted band inversion requisite for nontrivial topological properties. The compound exhibits superconductivity below a critical temperature Tc = 1.8 K, with a zero-temperature upper critical field Bc2 ≈ 2.3 T. Although superconducting state is clearly reflected in the electrical resistivity and magnetic susceptibility data, no corresponding anomaly can be seen in the specific heat. Temperature dependence of the electrical resistivity suggests existence of two parallel conduction channels: metallic and semiconducting, with the latter making negligible contribution at low temperatures. The magnetoresistance is huge and clearly shows a weak antilocalization effect in small magnetic fields. Above about 1.5 T, the magnetoresistance becomes linear and does not saturate in fields up to 9 T. The linear magnetoresistance is observed up to room temperature. Below 10 K, it is accompanied by Shubnikov-de Haas oscillations. Their analysis reveals charge carriers with effective mass of 0.06 me and a Berry phase very close to π, expected for Dirac-fermion surface states, thus corroborating topological nature of the material. PMID:25778789

  15. Multilevel Thermally Assisted Magnetoresistive Random-Access Memory Based on Exchange-Biased Vortex Configurations

    NASA Astrophysics Data System (ADS)

    de Araujo, C. I. L.; Alves, S. G.; Buda-Prejbeanu, L. D.; Dieny, B.

    2016-08-01

    A concept of multilevel thermally assisted magnetoresistive random-access memory is proposed and investigated by micromagnetic simulations. The storage cells are magnetic tunnel junctions in which the storage layer is exchange biased and in a vortex configuration. The reference layer is an unpinned soft magnetic layer. The stored information is encoded via the position of the vortex core in the storage layer. This position can be varied along two degrees of freedom: the radius and the in-plane angle. The information is read out from the amplitude and phase of the tunnel magnetoresistance signal obtained by applying a rotating field on the cell without heating the cell. Various configurations are compared in which the soft reference layer consists of either a simple ferromagnetic layer or a synthetic antiferromagnetic sandwich (SAF). Among those, the most practical one comprises a SAF reference layer in which the magnetostatic interaction between the SAF and storage layer is minimized. This type of cell should allow one to store at least 40 different states per cell representing more than five bits per cell.

  16. Detection of magnetic resonance signals using a magnetoresistive sensor

    SciTech Connect

    Budker, Dmitry; Pines, Alexander; Xu, Shoujun; Hilty, Christian; Ledbetter, Micah P; Bouchard, Louis S

    2013-10-01

    A method and apparatus are described wherein a micro sample of a fluidic material may be assayed without sample contamination using NMR techniques, in combination with magnetoresistive sensors. The fluidic material to be assayed is first subject to pre-polarization, in one embodiment, by passage through a magnetic field. The magnetization of the fluidic material is then subject to an encoding process, in one embodiment an rf-induced inversion by passage through an adiabatic fast-passage module. Thereafter, the changes in magnetization are detected by a pair of solid-state magnetoresistive sensors arranged in gradiometer mode. Miniaturization is afforded by the close spacing of the various modules.

  17. Magnetoresistance of nanosized magnetic configurations in single nanowires

    NASA Astrophysics Data System (ADS)

    Wegrowe, J.-E.; Gilbert, S.; Doudin, B.; Ansermet, J.-Ph.

    1998-03-01

    The problem of studying spin configurations at nanoscopic level is that magnetic measurements at this scale cannot be performed using usual magnetometers. We have shown that anisotropic magnetoresistance (AMR) measured with micro-contacts allows spin configurations of a single nanowire to be studied in details. The nanowires are diameter 50 nm and length 6000 nm and are produced by a combination of electrodeposition in track-etched membrane templates and sputtering technics. Magnetoresistance of well-defined spin configurations in single nanowires, like Curling magnetization reversal modes or domain wall, are measured.

  18. Magnetoresistance and magnetic ordering in praseodymium and neodymium hexaborides

    SciTech Connect

    Anisimov, M. A.; Bogach, A. V.; Glushkov, V. V.; Demishev, S. V.; Samarin, N. A.; Filipov, V. B.; Shitsevalova, N. Yu.; Kuznetsov, A. V.; Sluchanko, N. E.

    2009-11-15

    The magnetoresistance {Delta}{rho}/{rho} of single-crystal samples of praseodymium and neodymium hexaborides (PrB{sub 6} and NdB{sub 6}) has been measured at temperatures ranging from 2 to 20 K in a magnetic field of up to 80 kOe. The results obtained have revealed a crossover of the regime from a small negative magnetoresistance in the paramagnetic state to a large positive magnetoresistive effect in magnetically ordered phases of the PrB{sub 6} and NdB{sub 6} compounds. An analysis of the dependences {Delta}{rho}(H)/{rho} has made it possible to separate three contributions to the magnetoresistance for the compounds under investigation. In addition to the main negative contribution, which is quadratic in the magnetic field (-{Delta}{rho}/{rho} {proportional_to} H{sup 2}), a linear positive contribution ({Delta}{rho}/{rho} {proportional_to} H) and a nonlinear ferromagnetic contribution have been found. Upon transition to a magnetically ordered state, the linear positive component in the magnetoresistance of the PrB{sub 6} and NdB{sub 6} compounds becomes dominant, whereas the quadratic contribution to the negative magnetoresistance is completely suppressed in the commensurate magnetic phase of these compounds. The presence of several components in the magnetoresistance has been explained by assuming that, in the antiferromagnetic phases of PrB{sub 6} and NdB{sub 6}, ferromagnetic nanoregions (ferrons) are formed in the 5d band in the vicinity of the rareearth ions. The origin of the quadratic contribution to the negative magnetoresistance is interpreted in terms of the Yosida model, which takes into account scattering of conduction electrons by localized magnetic moments of rare-earth ions. Within the approach used, the local magnetic susceptibility {chi}{sub loc} has been estimated. It has been demonstrated that, in the temperature range T{sub N} < T < 20 K, the behavior of the local magnetic susceptibility {chi}{sub loc} for the compounds under investigation can

  19. Anomalous rf magnetoresistance in copper at 4/degree/K

    SciTech Connect

    Halama, H.J.; Prodell, A.G.; Rogers, J.T.; De Panfilis, S.; Melissinos, A.C.; Moskowitz, B.E.; Semertzidis, Y.K.; Wuensch, W.U.; Fowler, W.B.; Nezrick, F.A.

    1988-03-01

    We have measured the effect of a magnetic field on the surface resistance of polycrystalline Cu at f = 1.2 GHz and at 4.4/degree/K; under these conditions the surface resistance is well into the anomalous skin effect regime but has not reached its limiting value. We find that the transverse and longitudinal magnetoresistance are an order of magnitude smaller than the DC magnetoresistance and depend quadratically on the field. At low fields we observe a decrease in surface resistance with increasing field which can be interpreted as a size effect of the TF surface current. 17 refs., 4 figs., 1 tab.

  20. Structural and giant magnetoresistance characterization of Ag sbnd Co multilayers

    NASA Astrophysics Data System (ADS)

    Angelakeris, M.; Poulopoulos, P.; Valassiades, O.; Stoemenos, J.; Kalogirou, O.; Niarchos, D.; Flevaris, N. K.

    1997-01-01

    Ag sbnd Co multilayers were prepared on various substrates (Si, polyimide and glass) by e-beam evaporation under ultra high vacuum. X-ray diffraction and high resolution electron microscopy studies showed a deterioration of multilayer structure upon reducing the individual Co-layer thickness to 0.5 nm. Furthermore, the saturation field in the parallel field geometry increases, as SQUID magnetometry revealed, while magnetoresistance reaches 16% at room temperature and exceeds 30% at 30 K. Magnetoresistance values were found to depend strongly on individual layer thicknesses as well as on the total film thickness.

  1. Local magnetoresistance in Fe/MgO/Si lateral spin valve at room temperature

    SciTech Connect

    Sasaki, Tomoyuki Koike, Hayato; Oikawa, Tohru; Suzuki, Toshio; Ando, Yuichiro; Suzuki, Yoshishige; Shiraishi, Masashi

    2014-02-03

    Room temperature local magnetoresistance in two-terminal scheme is reported. By employing 1.6 nm-thick MgO tunnel barrier, spin injection efficiency is increased, resulting in large non-local magnetoresistance. The magnitude of the non-local magnetoresistance is estimated to be 0.0057 Ω at room temperature. As a result, a clear rectangle signal is observed in local magnetoresistance measurement even at room temperature. We also investigate the origin of local magnetoresistance by measuring the spin accumulation voltage of each contact separately.

  2. Enhancement of Spin-transfer torque switching via resonant tunneling

    SciTech Connect

    Chatterji, Niladri; Tulapurkar, Ashwin A.; Muralidharan, Bhaskaran

    2014-12-08

    We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a MgO-semiconductor heterostructure sandwiched between a fixed magnet and a free magnet. Using the non-equilibrium Green's function formalism coupled self consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation, we demonstrate enhanced tunnel magneto-resistance characteristics as well as lower switching voltages in comparison with traditional trilayer devices. Two device designs based on MgO based heterostructures are presented, where the physics of resonant tunneling leads to an enhanced spin transfer torque thereby reducing the critical switching voltage by up to 44%. It is envisioned that the proof-of-concept presented here may lead to practical device designs via rigorous materials and interface studies.

  3. Low temperature magnetoresistance studies in MBE grown topological insulator thin films

    NASA Astrophysics Data System (ADS)

    Dey, Rik; Roy, Anupam; Pramanik, Tanmoy; Guchhait, Samaresh; Sonde, Sushant; Rai, Amritesh; Majumder, Sarmita; Ghosh, Bahniman; Register, Leonard; Banerjee, Sanjay

    2015-03-01

    We studied low temperature magnetoresistance in molecular beam epitaxy grown topological insulator Bi2Se3andBi2Te3 thin films. The surface and structural characterization of the grown films showed smooth epitaxial growth on Si(111). The magnetoresistance has been measured at low temperatures (2 - 20 K) with magnetic fields upto 9 T. The full range perpendicular field magnetoresistance has been explained with the original Hikami-Larkin-Nagaoka theory. Altshuler-Aronov theory of localization has been used to understand the full range parallel field magnetoresistance. Various scattering times have been estimated by fitting the magnetoresistance data with the theory. It is shown that the Zeeman effect is not needed to explain the magnetoresistance and has not been considered in the theory either. The angle dependent anisotropic magnetoresistance has also been observed and explained using the above theories. This work is funded by NRI-SWAN.

  4. Neutron activated switch

    DOEpatents

    Barton, David M.

    1991-01-01

    A switch for reacting quickly to a neutron emission. A rod consisting of fissionable material is located inside a vacuum tight body. An adjustable contact is located coaxially at an adjustable distance from one end of the rod. Electrical leads are connected to the rod and to the adjustable contact. With a vacuum drawn inside the body, a neutron bombardment striking the rod causes it to heat and expand longitudinally until it comes into contact with the adjustable contact. This circuit closing occurs within a period of a few microseconds.

  5. Bimetal switches in an AND logic gate

    NASA Astrophysics Data System (ADS)

    Lubrica, Joel V.; Lubrica, Quantum Yuri B.

    2016-09-01

    In this frontline, we use bimetal switches to provide inputs in an electrical AND logic gate. These switches can be obtained from the pre-heat starters of fluorescent lamps, by safely removing the glass enclosure. They may be activated by small open flames. This frontline has a historical aspect because fluorescent lamps, together with pre-heat starters, are now being replaced by compact fluorescent, halogen, and LED lamps.

  6. Giant Magnetoresistance: Basic Concepts, Microstructure, Magnetic Interactions and Applications

    PubMed Central

    Ennen, Inga; Kappe, Daniel; Rempel, Thomas; Glenske, Claudia; Hütten, Andreas

    2016-01-01

    The giant magnetoresistance (GMR) effect is a very basic phenomenon that occurs in magnetic materials ranging from nanoparticles over multilayered thin films to permanent magnets. In this contribution, we first focus on the links between effect characteristic and underlying microstructure. Thereafter, we discuss design criteria for GMR-sensor applications covering automotive, biosensors as well as nanoparticular sensors. PMID:27322277

  7. Giant Magnetoresistive (GMR) Sensor Microelectromechanical System (MEMS) Device

    NASA Technical Reports Server (NTRS)

    Ramesham, R.

    1999-01-01

    The measurement of acceleration has been accomplished using several technologies in high-reliability applications such as guidance control, detonation, and shock/vibration measurement. Electromechanical, piezoelectric, piezoresistive, and capacitive acceleration sensors are available and the literature pertinent to giant magnetoresistive sensors (GMR) for the above applications are scanty.

  8. Giant Magnetoresistance: Basic Concepts, Microstructure, Magnetic Interactions and Applications.

    PubMed

    Ennen, Inga; Kappe, Daniel; Rempel, Thomas; Glenske, Claudia; Hütten, Andreas

    2016-01-01

    The giant magnetoresistance (GMR) effect is a very basic phenomenon that occurs in magnetic materials ranging from nanoparticles over multilayered thin films to permanent magnets. In this contribution, we first focus on the links between effect characteristic and underlying microstructure. Thereafter, we discuss design criteria for GMR-sensor applications covering automotive, biosensors as well as nanoparticular sensors. PMID:27322277

  9. Tuning spin transport properties and molecular magnetoresistance through contact geometry

    SciTech Connect

    Ulman, Kanchan; Narasimhan, Shobhana; Delin, Anna

    2014-01-28

    Molecular spintronics seeks to unite the advantages of using organic molecules as nanoelectronic components, with the benefits of using spin as an additional degree of freedom. For technological applications, an important quantity is the molecular magnetoresistance. In this work, we show that this parameter is very sensitive to the contact geometry. To demonstrate this, we perform ab initio calculations, combining the non-equilibrium Green's function method with density functional theory, on a dithienylethene molecule placed between spin-polarized nickel leads of varying geometries. We find that, in general, the magnetoresistance is significantly higher when the contact is made to sharp tips than to flat surfaces. Interestingly, this holds true for both resonant and tunneling conduction regimes, i.e., when the molecule is in its “closed” and “open” conformations, respectively. We find that changing the lead geometry can increase the magnetoresistance by up to a factor of ∼5. We also introduce a simple model that, despite requiring minimal computational time, can recapture our ab initio results for the behavior of magnetoresistance as a function of bias voltage. This model requires as its input only the density of states on the anchoring atoms, at zero bias voltage. We also find that the non-resonant conductance in the open conformation of the molecule is significantly impacted by the lead geometry. As a result, the ratio of the current in the closed and open conformations can also be tuned by varying the geometry of the leads, and increased by ∼400%.

  10. Giant Magnetoresistance: Basic Concepts, Microstructure, Magnetic Interactions and Applications.

    PubMed

    Ennen, Inga; Kappe, Daniel; Rempel, Thomas; Glenske, Claudia; Hütten, Andreas

    2016-01-01

    The giant magnetoresistance (GMR) effect is a very basic phenomenon that occurs in magnetic materials ranging from nanoparticles over multilayered thin films to permanent magnets. In this contribution, we first focus on the links between effect characteristic and underlying microstructure. Thereafter, we discuss design criteria for GMR-sensor applications covering automotive, biosensors as well as nanoparticular sensors.

  11. Low temperature magnetoresistance measurements on bismuth nanowire arrays

    NASA Astrophysics Data System (ADS)

    Kaiser, Ch; Weiss, G.; Cornelius, T. W.; Toimil-Molares, M. E.; Neumann, R.

    2009-05-01

    We present low temperature resistance R(T) and magnetoresistance measurements for Bi nanowires with diameters between 100 and 500 nm, which are close to being single-crystalline. The nanowires were fabricated by electrochemical deposition in pores of polycarbonate membranes. R(T) varies as T2 in the low temperature range 1.5 Kmagnetoresistance. The transverse magnetoresistance of all samples shows a clear B1.5 variation. Its size depends strongly on the diameter of the wires but only weakly on temperature. Finally, a steplike increase in the magnetoresistance of our sample with a wire diameter of 100 nm was found and this might be attributed to a transition from one-dimensional to three-dimensional localization.

  12. Optical Fibre Switch

    NASA Astrophysics Data System (ADS)

    Markatos, S.; Ayres, S.; Kreit, D.; Kerr, A.; Youngquist, R. C.; Giles, I. P.

    1987-10-01

    The design construction and operation of a thermally controlled optical fibre switch, based upon the lap/polish technique, is described in this paper. The lap/polish method allows access to the evanescent field in an optical fibre and coupling between two fibres can be controlled from zero to total power transfer by changing the refractive index of the oil in the coupling region. Such refractive index changes can be induced thermally by directly heating the matching oil at the interaction area, with forming heating elements close to the fibre core. Power coupling is then proportional to the current supplied to the electrodes. Results are presented showing the frequency response of tlio device.

  13. Automatic thermal switch

    NASA Technical Reports Server (NTRS)

    Wing, L. D.; Cunningham, J. W. (Inventor)

    1981-01-01

    An automatic thermal switch to control heat flow includes a first thermally conductive plate, a second thermally conductive plate and a thermal transfer plate pivotally mounted between the first and second plates. A phase change power unit, including a plunger connected to the transfer plate, is in thermal contact with the first thermally conductive plate. A biasing element, connected to the transfer plate, biases the transfer plate in a predetermined position with respect to the first and second plates. When the phase change power unit is actuated by an increase in heat transmitted through the first plate, the plunger extends and pivots the transfer plate to vary the thermal conduction between the first and second plates through the transfer plate. The biasing element, transfer plate and piston can be arranged to provide either a normally closed or normally open thermally conductive path between the first and second plates.

  14. Selenium bond decreases ON resistance of light-activated switch

    NASA Technical Reports Server (NTRS)

    1965-01-01

    Vitrified amorphous selenium bond decreases the ON resistance of a gallium arsenide-silicon light-activated, low-level switch. The switch is used under a pulse condition to prolong switch life and minimize errors due to heating, devitrification, and overdrawing.

  15. Vanadium dioxide phase change switches

    NASA Astrophysics Data System (ADS)

    Field, M.; Hillman, C.; Stupar, P.; Hacker, J.; Griffith, Z.; Lee, K.-J.

    2015-05-01

    The thermally driven metal insulator transition in vanadium dioxide (VO2) is used to create a low loss millimeter wave switch which operates up to and beyond W-band frequencies. We have built RF switches using vanadium dioxide thin films fabricated within a section of inverted transmission line with integrated on chip heaters to provide local thermal control. On heating the films above the metal insulator transition we obtain record low switch insertion loss of 0.13 dB at 50 GHz and 0.5 dB at 110 GHz. The switch cut-off frequency is high, fc ~ 45 THz, due to the low on state resistance and off state capacitance. We have investigated the device physics of these switches including self-latching of the devices under high RF powers, and demonstrated their integration with silicon germanium RF circuits where the switch heater current sources and control logic are also integrated into the same silicon germanium circuit.

  16. Magnetoresistance effects and spin-valve like behavior of an arrangement of two MnAs nanoclusters

    SciTech Connect

    Fischer, M.; Klar, P. J.; Elm, M. T.; Sakita, S.; Hara, S.

    2015-01-19

    We report on magnetotransport measurements on a MnAs nanocluster arrangement consisting of two elongated single-domain clusters connected by a metal spacer. The arrangement was grown on GaAs(111)B-substrates by selective-area metal organic vapor phase epitaxy. Its structural properties were investigated using scanning-electron microscopy and atomic-force microscopy, while its magnetic domain structure was analyzed by magnetic-force microscopy. The magnetoresistance of the arrangement was investigated at 120 K for two measurement geometries with the magnetic field oriented in the sample plane. For both geometries, discrete jumps of the magnetoresistance of the MnAs nanocluster arrangement were observed. These jumps can be explained by magnetic-field induced switching of the relative orientation of the magnetizations of the two clusters which affects the spin-dependent scattering in the interface region between the clusters. For a magnetic field orientation parallel to the nanoclusters' elongation direction a spin-valve like behavior was observed, showing that ferromagnetic nanoclusters may be suitable building blocks for planar magnetoelectronic devices.

  17. Magnetoresistance effects and spin-valve like behavior of an arrangement of two MnAs nanoclusters

    NASA Astrophysics Data System (ADS)

    Fischer, M.; Elm, M. T.; Sakita, S.; Hara, S.; Klar, P. J.

    2015-01-01

    We report on magnetotransport measurements on a MnAs nanocluster arrangement consisting of two elongated single-domain clusters connected by a metal spacer. The arrangement was grown on GaAs(111)B-substrates by selective-area metal organic vapor phase epitaxy. Its structural properties were investigated using scanning-electron microscopy and atomic-force microscopy, while its magnetic domain structure was analyzed by magnetic-force microscopy. The magnetoresistance of the arrangement was investigated at 120 K for two measurement geometries with the magnetic field oriented in the sample plane. For both geometries, discrete jumps of the magnetoresistance of the MnAs nanocluster arrangement were observed. These jumps can be explained by magnetic-field induced switching of the relative orientation of the magnetizations of the two clusters which affects the spin-dependent scattering in the interface region between the clusters. For a magnetic field orientation parallel to the nanoclusters' elongation direction a spin-valve like behavior was observed, showing that ferromagnetic nanoclusters may be suitable building blocks for planar magnetoelectronic devices.

  18. Quantum and classical magnetoresistance in ambipolar topological insulator transistors with gate-tunable bulk and surface conduction.

    PubMed

    Tian, Jifa; Chang, Cuizu; Cao, Helin; He, Ke; Ma, Xucun; Xue, Qikun; Chen, Yong P

    2014-05-07

    Weak antilocalization (WAL) and linear magnetoresistance (LMR) are two most commonly observed magnetoresistance (MR) phenomena in topological insulators (TIs) and often attributed to the Dirac topological surface states (TSS). However, ambiguities exist because these phenomena could also come from bulk states (often carrying significant conduction in many TIs) and are observable even in non-TI materials. Here, we demonstrate back-gated ambipolar TI field-effect transistors in (Bi0.04Sb0.96)2Te3 thin films grown by molecular beam epitaxy on SrTiO3(111), exhibiting a large carrier density tunability (by nearly 2 orders of magnitude) and a metal-insulator transition in the bulk (allowing switching off the bulk conduction). Tuning the Fermi level from bulk band to TSS strongly enhances both the WAL (increasing the number of quantum coherent channels from one to peak around two) and LMR (increasing its slope by up to 10 times). The SS-enhanced LMR is accompanied by a strongly nonlinear Hall effect, suggesting important roles of charge inhomogeneity (and a related classical LMR), although existing models of LMR cannot capture all aspects of our data. Our systematic gate and temperature dependent magnetotransport studies provide deeper insights into the nature of both MR phenomena and reveal differences between bulk and TSS transport in TI related materials.

  19. Temperature-Dependent Asymmetry of Anisotropic Magnetoresistance in Silicon p-n Junctions

    PubMed Central

    Yang, D. Z.; Wang, T.; Sui, W. B.; Si, M. S.; Guo, D. W.; Shi, Z.; Wang, F. C.; Xue, D. S.

    2015-01-01

    We report a large but asymmetric magnetoresistance in silicon p-n junctions, which contrasts with the fact of magnetoresistance being symmetric in magnetic metals and semiconductors. With temperature decreasing from 293 K to 100 K, the magnetoresistance sharply increases from 50% to 150% under a magnetic field of 2 T. At the same time, an asymmetric magnetoresistance, which manifests itself as a magnetoresistance voltage offset with respect to the sign of magnetic field, occurs and linearly increases with magnetoresistance. More interestingly, in contrast with other materials, the lineshape of anisotropic magnetoresistance in silicon p-n junctions significantly depends on temperature. As temperature decreases from 293 K to 100 K, the width of peak shrinks from 90° to 70°. We ascribe these novel magnetoresistance to the asymmetric geometry of the space charge region in p-n junction induced by the magnetic field. In the vicinity of the space charge region the current paths are deflected, contributing the Hall field to the asymmetric magnetoresistance. Therefore, the observed temperature-dependent asymmetry of magnetoresistance is proved to be a direct consequence of the spatial configuration evolution of space charge region with temperature. PMID:26323495

  20. Magnetoresistive polyaniline/multi-walled carbon nanotube nanocomposites with negative permittivity

    NASA Astrophysics Data System (ADS)

    Gu, Hongbo; Guo, Jiang; He, Qingliang; Jiang, Yuan; Huang, Yudong; Haldolaarachige, Neel; Luo, Zhiping; Young, David P.; Wei, Suying; Guo, Zhanhu

    2013-12-01

    Contrary to the observed positive giant magnetoresistance (GMR) in as-received multi-walled carbon nanotubes (MWNTs), pure polyaniline (PANI) synthesized with Cr(vi) as oxidant and MWNTs/PANI nanocomposites with ammonium persulfate (APS) as oxidant, a room temperature negative GMR of around -2% was reported in MWNTs/PANI nanocomposites with Cr(vi) as oxidant. Different from a frequency switch of permittivity from negative to positive in MWNTs/PANI nanocomposites with APS as oxidant, unique negative permittivity was observed in MWNTs/PANI nanocomposites with Cr(vi) as oxidant within the measured frequency range from 20 to 2 × 106 Hz. The obtained unique negative permittivity was explained by the plasma frequency from the Drude model, at which the permittivity changes from negative to positive and the material changes from a metamaterial to an ordinary dielectric medium. The observed positive and negative GMR behaviors in these disordered systems as verified by the temperature dependent resistivity exploration were well explained through a wave-function shrinkage model and orbital magnetoconductivity theory by calculating the changed localization length (a0).Contrary to the observed positive giant magnetoresistance (GMR) in as-received multi-walled carbon nanotubes (MWNTs), pure polyaniline (PANI) synthesized with Cr(vi) as oxidant and MWNTs/PANI nanocomposites with ammonium persulfate (APS) as oxidant, a room temperature negative GMR of around -2% was reported in MWNTs/PANI nanocomposites with Cr(vi) as oxidant. Different from a frequency switch of permittivity from negative to positive in MWNTs/PANI nanocomposites with APS as oxidant, unique negative permittivity was observed in MWNTs/PANI nanocomposites with Cr(vi) as oxidant within the measured frequency range from 20 to 2 × 106 Hz. The obtained unique negative permittivity was explained by the plasma frequency from the Drude model, at which the permittivity changes from negative to positive and the material

  1. Magneto-resistive coefficient enhancement observed around Verwey-like transition on spinel ferrites XFe{sub 2}O{sub 4} (X = Mn, Zn)

    SciTech Connect

    López Maldonado, K. L. Vazquez Zubiate, L.; Elizalde Galindo, J. T.; Presa, P. de la; Matutes Aquino, J. A.

    2014-05-07

    Manganese and Zinc ferrites were prepared by solid state reaction. The resulting powders were pressed into pellets and heat treated at 1100 °C. The samples were characterized by using X-ray diffraction, pure phases of zinc ferrite (ZnFe{sub 2}O{sub 4}) and manganese ferrite (MnFe{sub 2}O{sub 4}) were obtained. Scanning electron microscopy images showed a good contact between particles. A drop of electrical resistance was found in both samples, MnFe{sub 2}O{sub 4} and ZnFe{sub 2}O{sub 4}, with values going from 2750 to 130 Ω and from 1100 to 55 Ω, respectively. Transition temperatures were determined to be T{sub V} = 225 K for MnFe{sub 2}O{sub 4} and T{sub V} = 130 K for ZnFe{sub 2}O{sub 4}. Magnetoresistance measurements were carried out in the temperature range where R showed the transition, defined as the Verwey-like transition temperature range, ΔT{sub V}. No magnetoresistive effect was observed out of it. The magnetoresistive coefficient (MRC) observed at ΔT{sub V} reached its maximum values of 1.1% for MnFe{sub 2}O{sub 4} and 6.68% for ZnFe{sub 2}O{sub 4}. The differences between MRC values are related to the divalent metal element used. Finally, the magnetoresistive response indicates that the electrical transition observed is strongly influencing the magnetoresistance; where the underlying responsible for this behavior could be a charge reordering occurring at the Verwey-like transition temperature.

  2. Analysis of the Distribution of Magnetic Fluid inside Tumors by a Giant Magnetoresistance Probe

    PubMed Central

    Gooneratne, Chinthaka P.; Kurnicki, Adam; Yamada, Sotoshi; Mukhopadhyay, Subhas C.; Kosel, Jürgen

    2013-01-01

    Magnetic fluid hyperthermia (MFH) therapy uses the magnetic component of electromagnetic fields in the radiofrequency spectrum to couple energy to magnetic nanoparticles inside tumors. In MFH therapy, magnetic fluid is injected into tumors and an alternating current (AC) magnetic flux is applied to heat the magnetic fluid- filled tumor. If the temperature can be maintained at the therapeutic threshold of 42°C for 30 minutes or more, the tumor cells can be destroyed. Analyzing the distribution of the magnetic fluid injected into tumors prior to the heating step in MFH therapy is an essential criterion for homogenous heating of tumors, since a decision can then be taken on the strength and localization of the applied external AC magnetic flux density needed to destroy the tumor without affecting healthy cells. This paper proposes a methodology for analyzing the distribution of magnetic fluid in a tumor by a specifically designed giant magnetoresistance (GMR) probe prior to MFH heat treatment. Experimental results analyzing the distribution of magnetic fluid suggest that different magnetic fluid weight densities could be estimated inside a single tumor by the GMR probe. PMID:24312280

  3. THYRATRON SWITCH

    DOEpatents

    Creveling, R.; Bourgeois, N.A. Jr.

    1959-04-21

    An arrangement for utilizing a thyratron as a noise free switch is described. It has been discovered that the voltage between plate and cathode of a thyratron will oscillate, producing voltage spikes, if the tube carries only a fraction of its maximum rated current. These voltage spikes can produce detrimental effects where the thyratron is used in critical timing circuits. To alleviate this problem the disclosed circuit provides a charged capacitor and a resistor in parallel with the tube and of such value that the maximum current will flow from the capacitor through the thyratron when it is triggered. During this time the signal current is conducted through the tube, before the thyratron voltage starts to oscillate, and the signal current output is free of noise spikes.

  4. Photoinduced magnetoresistance and magnetic-field-modulated photoelectric response in BiFeO3/Si heterojunctions

    NASA Astrophysics Data System (ADS)

    Xi, Jianfeng; Ni, Hao; Zhao, Kun; Lu, Huibin; Guo, Erjia; He, Meng; Jin, Kuijuan; Zhou, Yueliang; Yang, Guozhen; Xiao, Lizhi; Zhang, Zhenwei

    2016-05-01

    The BiFeO3 film grown on Si substrate without template exhibits a diode-like effect, and the forward direction of the diode can be switched by external electric fields. The laser irradiation and the magnetic field can induce polarization, thus modulating the photovoltaic effect. The magnetoresistance values change from -1.19 to -5.79 and to -35.48 % dramatically under 50 μA current in 770 Oe when the junction is irradiated by 532 and 1064 nm lasers, respectively. These results reveal unusual and interesting charge conduction behavior in leaky ferroelectrics and should promote the study of BiFeO3 based on multifunctional materials.

  5. Lateral electric-field control of giant magnetoresistance in Co/Cu/Fe/BaTiO{sub 3} multiferroic heterostructure

    SciTech Connect

    Savitha Pillai, S.; Kojima, H.; Itoh, M.; Taniyama, T.

    2015-08-17

    We report lateral electric-field-driven sizable changes in the magnetoresistance of Co/Cu/Fe tri-layered wires on BaTiO{sub 3} single crystal. While the observed change is marginal in the tetragonal phase of BaTiO{sub 3}, it reaches over 40% in the orthorhombic and rhombohedral phases with an electric field of 66 kV/cm. We attribute it to possible electric-field-induced variations of the spin-dependent electronic structures, i.e., spin polarization, of the Fe via interfacial strain transfer from BaTiO{sub 3}. The contrasting results for the different phases of BaTiO{sub 3} are discussed, associated with the distinct aspects of the ferroelectric polarization switching processes in each phase.

  6. Intergranular magnetoresistance in Sr2FeMoO6 from a magnetic tunnel barrier mechanism across grain boundaries.

    PubMed

    Sarma, D D; Ray, Sugata; Tanaka, K; Kobayashi, M; Fujimori, A; Sanyal, P; Krishnamurthy, H R; Dasgupta, C

    2007-04-13

    We present magnetization (M) and magnetoresistance (MR) data for a series of Sr2FeMoO6 samples with independent control on antisite defect and grain-boundary densities, which reveal several unexpected features, including a novel switching-like behavior of MR with M. These, in conjunction with model calculations, establish that the MR in Sr2FeMoO6 is dominantly controlled by a new mechanism, derived from the magnetic polarization of grain-boundary regions acting like spin valves, leading to behavior qualitatively different from that usually encountered in tunneling MR. We show that a simple and useful experimental signature for the presence of this spin-valve-type MR (SVMR) is a wider hysteresis in MR compared to that in M. PMID:17501379

  7. Spin rectification induced by spin Hall magnetoresistance at room temperature

    NASA Astrophysics Data System (ADS)

    Wang, P.; Jiang, S. W.; Luan, Z. Z.; Zhou, L. F.; Ding, H. F.; Zhou, Y.; Tao, X. D.; Wu, D.

    2016-09-01

    We have experimentally and theoretically investigated the dc voltage generation in the heterostructure of Pt and yttrium iron garnet under the ferromagnetic resonance. Besides a symmetric Lorenz line shape dc voltage, an antisymmetric Lorenz line shape dc voltage is observed in field scan, which can solely originate from the spin rectification effect due to the spin Hall magnetoresistance. The angular dependence of the dc voltage is theoretically analyzed by taking into account both the spin pumping and the spin rectification effects. We find that the experimental results are in excellent agreement with the theoretical model, further identifying the spin Hall magnetoresistance origin of the spin rectification effect. Moreover, the spin pumping and the spin rectification effects are quantitatively separated by their different angular dependence at particular experimental geometry.

  8. Enhancing magnetoresistance in tetrathiafulvalene carboxylate modified iron oxide nanoparticle assemblies

    NASA Astrophysics Data System (ADS)

    Lv, Zhong-Peng; Luan, Zhong-Zhi; Cai, Pei-Yu; Wang, Tao; Li, Cheng-Hui; Wu, Di; Zuo, Jing-Lin; Sun, Shouheng

    2016-06-01

    We report a facile approach to stabilize Fe3O4 nanoparticles (NPs) by using tetrathiafulvalene carboxylate (TTF-COO-) and to control electron transport with an enhanced magnetoresistance (MR) effect in TTF-COO-Fe3O4 NP assemblies. This TTF-COO-coating is advantageous over other conventional organic coatings, making it possible to develop stable Fe3O4 NP arrays for sensitive spintronics applications.We report a facile approach to stabilize Fe3O4 nanoparticles (NPs) by using tetrathiafulvalene carboxylate (TTF-COO-) and to control electron transport with an enhanced magnetoresistance (MR) effect in TTF-COO-Fe3O4 NP assemblies. This TTF-COO-coating is advantageous over other conventional organic coatings, making it possible to develop stable Fe3O4 NP arrays for sensitive spintronics applications. Electronic supplementary information (ESI) available: Experimental details; supplementary figures and tables. See DOI: 10.1039/c6nr03311c

  9. Maximum non-saturating magnetoresistance in MoTe2

    NASA Astrophysics Data System (ADS)

    Abdel-Hafiez, Mahmoud; Gu, Zhehao; Chen, Xiao-Jia; Center for High Pressure Science; Technology Advanced Research, Shanghai, 201203, China Team

    The search for exotic materials with a linear magnetoresistance (MR) is one of the most challenging tasks of the condensed matter community and materials science. Here, we investigated the magnetoresistance behavior of high-quality single crystals MoTe2. A large linear non-staturated MR in a magnetic field of 60 T, was observed with a maximum at a temperature of T = 45 K. The detailed field and temperature dependencies will be presented. Our results not only provide a general scaling approach for the anisotropic MR but also are crucial for correctly understanding the mechanism of the linear MR, including the origin of the remarkable ``turn-on'' behavior in the resistance versus temperature curve.

  10. Co/Cu multilayers with reduced magnetoresistive hysteresis

    NASA Astrophysics Data System (ADS)

    Kubinski, D. J.; Holloway, H.

    1997-01-01

    Practical applications of Co/Cu multilayers (MLs) require copper thicknesses either ≈ 9 Å or ≈ 20 Å corresponding to the first or second antiferromagnetic maximum (AFM). The first AFM has much smaller magnetoresistive hysteresis than the second, but also has lower sensitivity. We discuss application of these MLs when low hysteresis is required. For the first AFM we may improve the sensitivity while retaining low hysteresis by increasing the cobalt thickness to 30-40 Å. At the second AFM we can reduce the magnetoresistive hysteresis by reducing the cobalt thickness to ˜ 3 Å. A particularly attractive combination of high sensitivity and low hysteresis is obtained at the second AFM by alternating such very thin Co layers with 15 Å thick Co layers.

  11. A Magnetoresistive Tactile Sensor for Harsh Environment Applications

    PubMed Central

    Alfadhel, Ahmed; Khan, Mohammed Asadullah; Cardoso, Susana; Leitao, Diana; Kosel, Jürgen

    2016-01-01

    A magnetoresistive tactile sensor is reported, which is capable of working in high temperatures up to 140 °C. Hair-like bioinspired structures, known as cilia, made out of permanent magnetic nanocomposite material on top of spin-valve giant magnetoresistive (GMR) sensors are used for tactile sensing at high temperatures. The magnetic nanocomposite, consisting of iron nanowires incorporated into the polymer polydimethylsiloxane (PDMS), is very flexible, biocompatible, has high remanence, and is also resilient to antagonistic sensing ambient. When the cilia come in contact with a surface, they deflect in compliance with the surface topology. This yields a change of the GMR sensor signal, enabling the detection of extremely fine features. The spin-valve is covered with a passivation layer, which enables adequate performance in spite of harsh environmental conditions, as demonstrated in this paper for high temperature. PMID:27164113

  12. Negative Magnetoresistance in Viscous Flow of Two-Dimensional Electrons

    NASA Astrophysics Data System (ADS)

    Alekseev, P. S.

    2016-10-01

    At low temperatures, in very clean two-dimensional (2D) samples, the electron mean free path for collisions with static defects and phonons becomes greater than the sample width. Under this condition, the electron transport occurs by formation of a viscous flow of an electron fluid. We study the viscous flow of 2D electrons in a magnetic field perpendicular to the 2D layer. We calculate the viscosity coefficients as the functions of magnetic field and temperature. The off-diagonal viscosity coefficient determines the dispersion of the 2D hydrodynamic waves. The decrease of the diagonal viscosity in magnetic field leads to negative magnetoresistance which is temperature and size dependent. Our analysis demonstrates that this viscous mechanism is responsible for the giant negative magnetoresistance recently observed in the ultrahigh-mobility GaAs quantum wells. We conclude that 2D electrons in those structures in moderate magnetic fields should be treated as a viscous fluid.

  13. Insensitivity of tunneling anisotropic magnetoresistance to non-magnetic electrodes

    SciTech Connect

    Wang, Y. Y.; Song, C. Wang, G. Y.; Zeng, F.; Pan, F.

    2013-11-11

    Ferromagnetic electrodes play a crucial role in magnetoresistance effect and spin injection, whereas the essential features of non-magnetic metal electrodes in spintronics are commonly ignored except for their electrical conductivity. Here, we verify that the room-temperature tunneling anisotropic magnetoresistance (TAMR) behavior in antiferromagnet-based [Pt/Co]/IrMn/AlO{sub x}/metal (metal = Pt, Au, Cu, Al) junctions is insensitive to the top metal electrodes. Similar out-of-plane signals are detected for different electrodes, in contrast to the varied shapes of in-plane TAMR curves which are most likely attributed to the differences in the multidomain structure of the magnetic electrode. This would add a different dimension to spintronics.

  14. Theoretical study of disorder induced magnetoresistance in graphene

    NASA Astrophysics Data System (ADS)

    Adam, Shaffique; Ping, Jinglei; Yudhistira, Indra; Ramakrishnan, Navneeth; Cho, Sungjae; Fuhrer, Michael S.

    2014-03-01

    In this work we predict theoretically that carrier density inhomogeneity provides a new mechanism for classical magnetoresistance. For concreteness, we study the case of graphene where density inhomogeneity and carrier scattering is dominated by charged impurities, although the mechanism itself is quite general and applies to other systems in which there are large spatial fluctuations of the carrier density. Calculations using an effective medium approximation show that low-field magnetoresistance becomes a universal function of the ratio between the average carrier density and the fluctuations of the carrier density, and scales as a power-law when this ratio is large. Our finding is in excellent agreement with recent experimental results. This work is supported by the Singapore National Research Foundation NRF-NRFF2012-01.

  15. Development of eddy current probes based on magnetoresistive sensors arrays

    NASA Astrophysics Data System (ADS)

    Sergeeva-Chollet, N.; Decitre, J.-M.; Fermon, C.; Pelkner, M.; Reimund, V.; Kreutzbruck, M.

    2014-02-01

    Eddy Current Technique is a powerful method for detection of surface notches and of buried flaws during inspection of metallic parts. Recent EC array probes have demonstrated a fast and efficient control of large surfaces. Nevertheless, when the size of flaws decreases or the defect is rather deep, traditional winding coil probes turn out to be useless. Magnetoresistive sensors present the advantages of flat frequency response and micron size. These sensors are hence very attractive for the detection of buried defects that require low frequencies because of skin depth effect. An optimization of the probe with magnetoresistive sensors as receivers has been made by simulations using CIVA software and finite elements methods with OPERA. EC probes for buried flaw detection have been designed. Experimental results have been compared with simulations.

  16. Giant magnetoresistance in the variable-range hopping regime

    SciTech Connect

    Ioffe, L. B.; Spivak, B. Z.

    2013-09-15

    We predict the universal power-law dependence of the localization length on the magnetic field in the strongly localized regime. This effect is due to the orbital quantum interference. Physically, this dependence shows up in an anomalously large negative magnetoresistance in the hopping regime. The reason for the universality is that the problem of the electron tunneling in a random media belongs to the same universality class as the directed polymer problem even in the case of wave functions of random sign. We present numerical simulations that prove this conjecture. We discuss the existing experiments that show anomalously large magnetoresistance. We also discuss the role of localized spins in real materials and the spin polarizing effect of the magnetic field.

  17. A Magnetoresistive Tactile Sensor for Harsh Environment Applications.

    PubMed

    Alfadhel, Ahmed; Khan, Mohammed Asadullah; Cardoso, Susana; Leitao, Diana; Kosel, Jürgen

    2016-01-01

    A magnetoresistive tactile sensor is reported, which is capable of working in high temperatures up to 140 °C. Hair-like bioinspired structures, known as cilia, made out of permanent magnetic nanocomposite material on top of spin-valve giant magnetoresistive (GMR) sensors are used for tactile sensing at high temperatures. The magnetic nanocomposite, consisting of iron nanowires incorporated into the polymer polydimethylsiloxane (PDMS), is very flexible, biocompatible, has high remanence, and is also resilient to antagonistic sensing ambient. When the cilia come in contact with a surface, they deflect in compliance with the surface topology. This yields a change of the GMR sensor signal, enabling the detection of extremely fine features. The spin-valve is covered with a passivation layer, which enables adequate performance in spite of harsh environmental conditions, as demonstrated in this paper for high temperature. PMID:27164113

  18. Wheatstone bridge giant-magnetoresistance based cell counter.

    PubMed

    Lee, Chiun-Peng; Lai, Mei-Feng; Huang, Hao-Ting; Lin, Chi-Wen; Wei, Zung-Hang

    2014-07-15

    A Wheatstone bridge giant magnetoresistance (GMR) biosensor was proposed here for the detection and counting of magnetic cells. The biosensor was made of a top-pinned spin-valve layer structure, and it was integrated with a microchannel possessing the function of hydrodynamic focusing that allowed the cells to flow in series one by one and ensured the accuracy of detection. Through measuring the magnetoresistance variation caused by the stray field of the magnetic cells that flowed through the microchannel above the GMR biosensor, we can not only detect and count the cells but we can also recognize cells with different magnetic moments. In addition, a magnetic field gradient was applied for the separation of different cells into different channels. PMID:24534580

  19. Enhancing magnetoresistance in tetrathiafulvalene carboxylate modified iron oxide nanoparticle assemblies.

    PubMed

    Lv, Zhong-Peng; Luan, Zhong-Zhi; Cai, Pei-Yu; Wang, Tao; Li, Cheng-Hui; Wu, Di; Zuo, Jing-Lin; Sun, Shouheng

    2016-06-16

    We report a facile approach to stabilize Fe3O4 nanoparticles (NPs) by using tetrathiafulvalene carboxylate (TTF-COO(-)) and to control electron transport with an enhanced magnetoresistance (MR) effect in TTF-COO-Fe3O4 NP assemblies. This TTF-COO-coating is advantageous over other conventional organic coatings, making it possible to develop stable Fe3O4 NP arrays for sensitive spintronics applications. PMID:27271347

  20. Giant intrinsic tunnel magnetoresistance in manganite thin films etched with antidot arrays

    SciTech Connect

    Li, Hui; Li, Lin; Li, Long; Liang, Haixing; Cheng, Long; Zhai, Xiaofang; Zeng, Changgan

    2014-02-24

    Huge intrinsic tunnel magnetoresistance effects at low field are demonstrated in macroscopic La{sub 0.33}Pr{sub 0.34}Ca{sub 0.33}MnO{sub 3} thin films etched with periodic antidot arrays, and a highest magnetoresistance ratio (about 1600%) is achieved at 58 K. Such giant tunnel magnetoresistance effect might originate from delicate phase separation and coherent transport under the applied periodic spatial confinement. Strong transport fluctuation is also revealed in such systems due to phase competition. Our findings pave a way to realize tunnel magnetoresistance devices based on electronically phase separated materials with spatial modulations.

  1. Large linear magnetoresistance in topological crystalline insulator Pb0.6Sn0.4Te

    NASA Astrophysics Data System (ADS)

    Roychowdhury, Subhajit; Ghara, Somnath; Guin, Satya N.; Sundaresan, A.; Biswas, Kanishka

    2016-01-01

    Classical magnetoresistance generally follows the quadratic dependence of the magnetic field at lower field and finally saturates when field is larger. Here, we report the large positive non-saturating linear magnetoresistance in topological crystalline insulator, Pb0.6Sn0.4Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. Magnetoresistance value as high as ∼200% was achieved at 3 K at magnetic field of 9 T. Linear magnetoresistance observed in Pb0.6Sn0.4Te is mainly governed by the spatial fluctuation carrier mobility due to distortions in the current paths in inhomogeneous conductor.

  2. Negative magnetoresistance in Dirac semimetal Cd3As2

    PubMed Central

    Li, Hui; He, Hongtao; Lu, Hai-Zhou; Zhang, Huachen; Liu, Hongchao; Ma, Rong; Fan, Zhiyong; Shen, Shun-Qing; Wang, Jiannong

    2016-01-01

    A large negative magnetoresistance (NMR) is anticipated in topological semimetals in parallel magnetic fields, demonstrating the chiral anomaly, a long-sought high-energy-physics effect, in solid-state systems. Recent experiments reveal that the Dirac semimetal Cd3As2 has the record-high mobility and positive linear magnetoresistance in perpendicular magnetic fields. However, the NMR has not yet been unveiled. Here we report the observation of NMR in Cd3As2 microribbons in parallel magnetic fields up to 66% at 50 K and visible at room temperatures. The NMR is sensitive to the angle between magnetic and electrical fields, robust against temperature and dependent on the carrier density. The large NMR results from low carrier densities in our Cd3As2 samples, ranging from 3.0 × 1017 cm−3 at 300 K to 2.2 × 1016 cm−3 below 50 K. We therefore attribute the observed NMR to the chiral anomaly. In perpendicular magnetic fields, a positive linear magnetoresistance up to 1,670% at 14 T and 2 K is also observed. PMID:26744088

  3. Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn

    PubMed Central

    Galceran, R.; Fina, I.; Cisneros-Fernández, J.; Bozzo, B.; Frontera, C.; López-Mir, L.; Deniz, H.; Park, K.-W.; Park, B.-G.; Balcells, Ll.; Martí, X.; Jungwirth, T.; Martínez, B.

    2016-01-01

    Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of aniferromagnetic semiconductors and metals with Néel temperatures above room temperature exists. In the present manuscript, we persevere in the quest for the limits of how large can anisotropic magnetoresistance be in antiferromagnetic materials with very large spin-orbit coupling. We selected IrMn as a prime example of first-class moment (Mn) and spin-orbit (Ir) combination. Isothermal magnetotransport measurements in an antiferromagnetic-metal(IrMn)/ferromagnetic-insulator thin film bilayer have been performed. The metal/insulator structure with magnetic coupling between both layers allows the measurement of the modulation of the transport properties exclusively in the antiferromagnetic layer. Anisotropic magnetoresistance as large as 0.15% has been found, which is much larger than that for a bare IrMn layer. Interestingly, it has been observed that anisotropic magnetoresistance is strongly influenced by the field cooling conditions, signaling the dependence of the found response on the formation of domains at the magnetic ordering temperature. PMID:27762278

  4. Anisotropic magnetoresistivity in structured elastomer composites: modelling and experiments.

    PubMed

    Mietta, José Luis; Tamborenea, Pablo I; Martin Negri, R

    2016-08-14

    A constitutive model for the anisotropic magnetoresistivity in structured elastomer composites (SECs) is proposed. The SECs considered here are oriented pseudo-chains of conductive-magnetic inorganic materials inside an elastomer organic matrix. The pseudo-chains are formed by fillers which are simultaneously conductive and magnetic dispersed in the polymer before curing or solvent evaporation. The SEC is then prepared in the presence of a uniform magnetic field, referred to as Hcuring. This procedure generates the pseudo-chains, which are preferentially aligned in the direction of Hcuring. Electrical conduction is present in that direction only. The constitutive model for the magnetoresistance considers the magnetic pressure, Pmag, induced on the pseudo-chains by an external magnetic field, H, applied in the direction of the pseudo-chains. The relative changes in conductivity as a function of H are calculated by evaluating the relative increase of the electron tunnelling probability with Pmag, a magneto-elastic coupling which produces an increase of conductivity with magnetization. The model is used to adjust experimental results of magnetoresistance in a specific SEC where the polymer is polydimethylsiloxane, PDMS, and fillers are microparticles of magnetite-silver (referred to as Fe3O4[Ag]). Simulations of the expected response for other materials in both superparamagnetic and blocked magnetic states are presented, showing the influence of the Young's modulus of the matrix and filler's saturation magnetization. PMID:27418417

  5. Anisotropic giant magnetoresistance in NbSb2

    PubMed Central

    Wang, Kefeng; Graf, D.; Li, Lijun; Wang, Limin; Petrovic, C.

    2014-01-01

    The magnetic field response of the transport properties of novel materials and then the large magnetoresistance effects are of broad importance in both science and application. We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 × 105% in 2 K and 9 T field, and 4.3 × 106% in 0.4 K and 32 T field, without saturation) and field-induced metal-semiconductor-like transition, in NbSb2 single crystal. Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane. The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus the electronic structure reveal the coexistence of a small number of holes with very high mobility and a large number of electrons with low mobility. The large MR is attributed to the change of the Fermi surface induced by the magnetic field which is related to the Dirac-like point, in addition to orbital MR expected for high mobility metals. PMID:25476239

  6. Magnetoresistance in organic spintronic devices: the role of nonlinear effects

    NASA Astrophysics Data System (ADS)

    Shumilin, A. V.; Kabanov, V. V.; Dediu, V. A.

    2015-02-01

    We derive kinetic equations describing injection and transport of spin-polarized carriers in organic semiconductors with hopping conductivity via an impurity level. The model predicts a strongly voltage dependent magnetoresistance, defined as resistance variation between devices with parallel and antiparallel electrode magnetizations (spin-valve effect). The voltage dependence of the magnetoresistance splits into three distinct regimes. The first regime matches well-known inorganic spintronic regimes, corresponding to barrier-controlled spin injection or the well-known conductivity mismatch case. The second regime at intermediate voltages corresponds to strongly suppressed magnetoresistance. The third regime develops at higher voltages and accounts for a novel paradigm. It is promoted by the strong nonlinearity in the charge transport whose strength is characterized by the dimensionless parameter eU/kBT. This nonlinearity, depending on device conditions, can lead to both significant enhancement or to exponential suppression of the spin-valve effect in organic devices. We believe that these predictions are valid beyond the case of organic semiconductors and should be considered for any material characterized by strongly nonlinear charge transport.

  7. Switch Transcripts in Immunoglobulin Class Switching

    NASA Astrophysics Data System (ADS)

    Lorenz, Matthias; Jung, Steffen; Radbruch, Andreas

    1995-03-01

    B cells can exchange gene segments for the constant region of the immunoglobulin heavy chain, altering the class and effector function of the antibodies that they produce. Class switching is directed to distinct classes by cytokines, which induce transcription of the targeted DNA sequences. These transcripts are processed, resulting in spliced "switch" transcripts. Switch recombination can be directed to immunoglobulin G1 (IgG1) by the heterologous human metallothionein II_A promoter in mutant mice. Induction of the structurally conserved, spliced switch transcripts is sufficient to target switch recombination to IgG1, whereas transcription alone is not.

  8. Magnetoresistive sensors for angle, position, and electrical current measurement in demanding environments

    NASA Astrophysics Data System (ADS)

    Doms, Marco; Slatter, Rolf

    2014-06-01

    Nowadays, magnetoresistive (MR) sensors are used in a wide range of applications. In general, the MR-effect describes the change of the electrical resistance in an external magnetic field. MR sensors are not only used for measuring magnetic fields and rotational or linear motion, but also for non-contact switching applications and furthermore for highly dynamic current measurement. This is largely the result of increasingly complex demands on the sensors for e.g. high performance electrical drives. The sensors must not only be accurate and dynamic, but must also be robust under difficult operating conditions and exhibit very high reliability. Due to their physical working principle and their small size, MR sensors are especially suited to work in harsh environments like high or low temperature, radiation, pressure or mechanical shock. This paper describes the principle of operation, manufacturing process and benefits of MR sensors. This will be followed by a description of practical application examples from the automotive, oil and gas, renewable energy and space fields, where MR sensors are successfully applied in very small envelopes at very low /very high temperatures, under high pressure, high mechanical loading and under strong radiation.

  9. Magnetoresistive polyaniline/multi-walled carbon nanotube nanocomposites with negative permittivity.

    PubMed

    Gu, Hongbo; Guo, Jiang; He, Qingliang; Jiang, Yuan; Huang, Yudong; Haldolaarachige, Neel; Luo, Zhiping; Young, David P; Wei, Suying; Guo, Zhanhu

    2014-01-01

    Contrary to the observed positive giant magnetoresistance (GMR) in as-received multi-walled carbon nanotubes (MWNTs), pure polyaniline (PANI) synthesized with Cr(vi) as oxidant and MWNTs/PANI nanocomposites with ammonium persulfate (APS) as oxidant, a room temperature negative GMR of around -2% was reported in MWNTs/PANI nanocomposites with Cr(vi) as oxidant. Different from a frequency switch of permittivity from negative to positive in MWNTs/PANI nanocomposites with APS as oxidant, unique negative permittivity was observed in MWNTs/PANI nanocomposites with Cr(vi) as oxidant within the measured frequency range from 20 to 2 × 10(6) Hz. The obtained unique negative permittivity was explained by the plasma frequency from the Drude model, at which the permittivity changes from negative to positive and the material changes from a metamaterial to an ordinary dielectric medium. The observed positive and negative GMR behaviors in these disordered systems as verified by the temperature dependent resistivity exploration were well explained through a wave-function shrinkage model and orbital magnetoconductivity theory by calculating the changed localization length (a0). PMID:24226933

  10. Dual source heat pump

    DOEpatents

    Ecker, Amir L.; Pietsch, Joseph A.

    1982-01-01

    What is disclosed is a heat pump apparatus for conditioning a fluid characterized by a fluid handler and path for circulating the fluid in heat exchange relationship with a refrigerant fluid; at least two refrigerant heat exchangers, one for effecting heat exchange with the fluid and a second for effecting heat exchange between refrigerant and a heat exchange fluid and the ambient air; a compressor for efficiently compressing the refrigerant; at least one throttling valve for throttling liquid refrigerant; a refrigerant circuit; refrigerant; a source of heat exchange fluid; heat exchange fluid circulating device and heat exchange fluid circuit for circulating the heat exchange fluid in heat exchange relationship with the refrigerant; and valves or switches for selecting the heat exchangers and direction of flow of the refrigerant therethrough for selecting a particular mode of operation. The heat exchange fluid provides energy for defrosting the second heat exchanger when operating in the air source mode and also provides a alternate source of heat.

  11. Heat recovery method

    SciTech Connect

    Richarts, F.

    1985-04-16

    Heat is recovered by combining a heat transfer system including heat exchangers interconnected in a circulatory system, with a heat pump system. The heat pump system is preferably operated in accordance with the Lorenz-Principle. It is not necessary to divide the heat carrier circuit of the heat pump into two or three separate circulatory circuits. The heat carrier circuit of the heat pump can thus continue to operate unchanged even if the heat pump is switched off. For this purpose the warm heat carrier coming from a discharge fluid cooler, is heated further in a condenser of the heat pump and the cold heat carrier coming from a preheater or cooler group, is cooled further in an evaporator of the heat pump.

  12. Latching relay switch assembly

    DOEpatents

    Duimstra, Frederick A.

    1991-01-01

    A latching relay switch assembly which includes a coil section and a switch or contact section. The coil section includes at least one permanent magnet and at least one electromagnet. The respective sections are, generally, arranged in separate locations or cavities in the assembly. The switch is latched by a permanent magnet assembly and selectively switched by an overriding electromagnetic assembly.

  13. Radiation hard vacuum switch

    DOEpatents

    Boettcher, Gordon E.

    1990-01-01

    A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction.

  14. Radiation hard vacuum switch

    DOEpatents

    Boettcher, Gordon E.

    1990-03-06

    A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction.

  15. Electrical measurement of magnetic-field-impeded polarity switching of a ferromagnetic vortex core

    NASA Astrophysics Data System (ADS)

    Sushruth, Manu; Fried, Jasper P.; Anane, Abdelmadjid; Xavier, Stephane; Deranlot, Cyril; Kostylev, Mikhail; Cros, Vincent; Metaxas, Peter J.

    2016-09-01

    Vortex core polarity switching in NiFe disks has been evidenced using an all-electrical magnetoresistive rectification scheme. Simulation and experiments yield a consistent rectified signal loss when driving core gyration at high powers. With increasing power, the frequency range over which the loss occurs grows and the resonance downshifts in frequency, consistent with nonlinear core dynamics and periodic core polarity switching induced by the core reaching its critical velocity. Core-polarity-dependent rectification signals enable an independent verification of the switched core polarity. We also demonstrate the ability to impede core polarity switching by displacing the core towards the disk's edge where an increased core stiffness reduces the core velocity.

  16. Method of making active magnetic refrigerant, colossal magnetostriction and giant magnetoresistive materials based on Gd-Si-Ge alloys

    DOEpatents

    Gschneidner, Jr., Karl A.; Pecharsky, Alexandra O.; Pecharsky, Vitalij K.

    2003-07-08

    Method of making an active magnetic refrigerant represented by Gd.sub.5 (Si.sub.x Ge.sub.1-x).sub.4 alloy for 0.ltoreq.x.ltoreq.1.0 comprising placing amounts of the commercially pure Gd, Si, and Ge charge components in a crucible, heating the charge contents under subambient pressure to a melting temperature of the alloy for a time sufficient to homogenize the alloy and oxidize carbon with oxygen present in the Gd charge component to reduce carbon, rapidly solidifying the alloy in the crucible, and heat treating the solidified alloy at a temperature below the melting temperature for a time effective to homogenize a microstructure of the solidified material, and then cooling sufficiently fast to prevent the eutectoid decomposition and improve magnetocaloric and/or the magnetostrictive and/or the magnetoresistive properties thereof.

  17. Metal vapor arc switch electromagnetic accelerator technology

    NASA Technical Reports Server (NTRS)

    Mongeau, P. P.

    1984-01-01

    A multielectrode device housed in an insulator vacuum vessel, the metal vapor vacuum switch has high power capability and can hold off voltages up to the 100 kilovolt level. Such switches can be electronically triggered and can interrupt or commutate at a zero current crossing. The physics of arc initiation, arc conduction, and interruption are examined, including material considerations; inefficiencies; arc modes; magnetic field effects; passive and forced extinction; and voltage recovery. Heating, electrode lifetime, device configuration, and external circuit configuration are discussed. The metal vapor vacuum switch is compared with SCRs, GTOs, spark gaps, ignitrons, and mechanical breakers.

  18. Temporal switching jitter in photoconductive switches

    SciTech Connect

    GAUDET,JOHN A.; SKIPPER,MICHAEL C.; ABDALLA,MICHAEL D.; AHERN,SEAN M.; MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; O'MALLEY,MARTIN W.; HELGESON,WESLEY D.; ROMERO,SAMUEL P.

    2000-04-13

    This paper reports on a recent comparison made between the Air Force Research Laboratory (AFRL) gallium arsenide, optically-triggered switch test configuration and the Sandia National Laboratories (SNL) gallium arsenide, optically-triggered switch test configuration. The purpose of these measurements was to compare the temporal switch jitter times. It is found that the optical trigger laser characteristics are dominant in determining the PCSS jitter.

  19. Superconductivity emerging from a suppressed large magnetoresistant state in tungsten ditelluride

    PubMed Central

    Kang, Defen; Zhou, Yazhou; Yi, Wei; Yang, Chongli; Guo, Jing; Shi, Youguo; Zhang, Shan; Wang, Zhe; Zhang, Chao; Jiang, Sheng; Li, Aiguo; Yang, Ke; Wu, Qi; Zhang, Guangming; Sun, Liling; Zhao, Zhongxian

    2015-01-01

    The recent discovery of large magnetoresistance in tungsten ditelluride provides a unique playground to find new phenomena and significant perspective for potential applications. The large magnetoresistance effect originates from a perfect balance of hole and electron carriers, which is sensitive to external pressure. Here we report the suppression of the large magnetoresistance and emergence of superconductivity in pressurized tungsten ditelluride via high-pressure synchrotron X-ray diffraction, electrical resistance, magnetoresistance and alternating current magnetic susceptibility measurements. Upon increasing pressure, the positive large magnetoresistance effect is gradually suppressed and turned off at a critical pressure of 10.5 GPa, where superconductivity accordingly emerges. No structural phase transition is observed under the pressure investigated. In situ high-pressure Hall coefficient measurements at low temperatures demonstrate that elevating pressure decreases the population of hole carriers but increases that of the electron ones. Significantly, at the critical pressure, a sign change of the Hall coefficient is observed. PMID:26203807

  20. Superconductivity emerging from a suppressed large magnetoresistant state in tungsten ditelluride

    NASA Astrophysics Data System (ADS)

    Kang, Defen; Zhou, Yazhou; Yi, Wei; Yang, Chongli; Guo, Jing; Shi, Youguo; Zhang, Shan; Wang, Zhe; Zhang, Chao; Jiang, Sheng; Li, Aiguo; Yang, Ke; Wu, Qi; Zhang, Guangming; Sun, Liling; Zhao, Zhongxian

    2015-07-01

    The recent discovery of large magnetoresistance in tungsten ditelluride provides a unique playground to find new phenomena and significant perspective for potential applications. The large magnetoresistance effect originates from a perfect balance of hole and electron carriers, which is sensitive to external pressure. Here we report the suppression of the large magnetoresistance and emergence of superconductivity in pressurized tungsten ditelluride via high-pressure synchrotron X-ray diffraction, electrical resistance, magnetoresistance and alternating current magnetic susceptibility measurements. Upon increasing pressure, the positive large magnetoresistance effect is gradually suppressed and turned off at a critical pressure of 10.5 GPa, where superconductivity accordingly emerges. No structural phase transition is observed under the pressure investigated. In situ high-pressure Hall coefficient measurements at low temperatures demonstrate that elevating pressure decreases the population of hole carriers but increases that of the electron ones. Significantly, at the critical pressure, a sign change of the Hall coefficient is observed.

  1. Magnetoresistance in nanostructured Tb/Ti and Tb/Si multilayers

    SciTech Connect

    Svalov, A. V.; Kurlyandskaya, G. V.; Vas'kovskiy, V. O.; Sorokin, A. N.; Diercks, D.

    2011-01-15

    Magnetic, magnetoresistive and structural properties were studied for [Tb/Ti]{sub n} and [Tb/Si]{sub n} multilayers which were prepared by rf-sputtering. The thickness of the Tb layers varied from 1.5 to 12 nm. The thickness of 2 nm nonmagnetic spacers of Ti or Si was kept constant. Both anisotropic and isotropic magnetoresistance was observed in [Tb/Ti]{sub n} and [Tb/Si]{sub n} multilayers. A decrease in the thickness of the terbium layers led to a decrease in the anisotropic contribution to the total magnetoresistance. The negative isotropic magnetoresistanse in [Tb/Ti]{sub n} and [Tb/Si]{sub n} multilayers can be attributed to the giant magnetoresistance (GMR) and/or high field isotropic magnetoresistance. The structure of the samples of both types enabled the existence of the GMR effect.

  2. Large anisotropic normal-state magnetoresistance in clean MgB2 thin films.

    PubMed

    Li, Qi; Liu, B T; Hu, Y F; Chen, J; Gao, H; Shan, L; Wen, H H; Pogrebnyakov, A V; Redwing, J M; Xi, X X

    2006-04-28

    We report a large normal-state magnetoresistance with temperature-dependent anisotropy in very clean epitaxial MgB2 thin films (residual resistivity much smaller than 1 microOmega cm) grown by hybrid physical-chemical vapor deposition. The magnetoresistance shows a complex dependence on the orientation of the applied magnetic field, with a large magnetoresistance (Delta(rho)/(rho)0=136%) observed for the field H perpendicular ab plane. The angular dependence changes dramatically as the temperature is increased, and at high temperatures the magnetoresistance maximum changes to H||ab. We attribute the large magnetoresistance and the evolution of its angular dependence with temperature to the multiple bands with different Fermi surface topology in MgB2 and the relative scattering rates of the sigma and pi bands, which vary with temperature due to stronger electron-phonon coupling for the sigma bands.

  3. Systematic Angular Study of Magnetoresistance in Permalloy Connected Kagome Artificial Spin Ice

    NASA Astrophysics Data System (ADS)

    Park, Jungsik; Le, Brian; Watts, Justin; Leighton, Chris; Samarth, Nitin; Schiffer, Peter

    Artificial spin ices are nanostructured two-dimensional arrays of ferromagnetic elements, where frustrated interactions lead to unusual collective magnetic behavior. Here we report a room-temperature magnetoresistance study of connected permalloy (Ni81Fe19) kagome artificial spin ice networks, wherein the direction of the applied in-plane magnetic field is systematically varied. We measure both the longitudinal and transverse magnetoresistance in these structures, and we find certain transport geometries of the network show strong angular sensitivity - even small variations in the applied field angle lead to dramatic changes of the magnetoresistance response. We also investigate the magnetization reversal of the networks using magnetic force microscopy (MFM), demonstrating avalanche behavior in the magnetization reversal. The magnetoresistance features are analyzed using an anisotropic magnetoresistance (AMR) model. Supported by the US Department of Energy. Work at the University of Minnesota was supported by Seagate Technology, NSF MRSEC, and a Marie Curie International Outgoing Fellowship within the 7th European Community Framework Programme.

  4. Ultrafast nanoelectromechanical switches for VLSI power management

    NASA Astrophysics Data System (ADS)

    Venumbaka, Sri Ramya

    Power consumption is a major concern in the present chip design industry. Complementary Metal Oxide Semiconductor (CMOS) technology scaling has led to an exponential increase in the leakage power. The excessive power dissipation can result in more heat generation, which in turn increases the temperature. According to Intel's source, power density increased to a value of 1000 W/cm2 and is approaching the value which is equal to the radiation from the sun's surface (10000 W/cm2). This leads to reliability issues in nanometer-scale CMOS as Silicon starts melting at 1687K. To resolve this issue, we introduce a novel architecture to design nanoelectromechanical switches and implementation results with virtually zero leakage current, ˜1 V operation voltage, ˜1 GHz resonant frequency and nanometer-scale footprint. Microelectromechanical Switches (MEMS) have very low "on" and very high "off" resistances. Their switching voltages are usually high (5-50 V), switching speeds are usually low (1 MHz) and their footprints tend to be very large (many um2). We have designed and fabricated devices with very low actuation voltages and very high speed using tuning fork geometry compatible with conventional CMOS fabrication technologies. This unique switch geometry decreases the actuation voltage by a factor of 1.4 and doubles the switching speed. It consists of a cantilever beam that acts as a ground plane. Upon actuation, both the ground plane and the switch's main beam move towards each other that makes the center of mass stationary during switching and thus, the switching speed doubles. These tuning fork nanoelectromechanical switches can be readily implemented in Very Large Scale Integration (VLSI) circuits to manage leakage power. The thesis will describe the Nanoelectromechanical systems (NEMS) structures, their characteristics, leakage reduction techniques, reliability of the devices and piezo actuator structures to determine contact resistance and longevity of switches.

  5. Latching micro optical switch

    DOEpatents

    Garcia, Ernest J; Polosky, Marc A

    2013-05-21

    An optical switch reliably maintains its on or off state even when subjected to environments where the switch is bumped or otherwise moved. In addition, the optical switch maintains its on or off state indefinitely without requiring external power. External power is used only to transition the switch from one state to the other. The optical switch is configured with a fixed optical fiber and a movable optical fiber. The movable optical fiber is guided by various actuators in conjunction with a latching mechanism that configure the switch in one position that corresponds to the on state and in another position that corresponds to the off state.

  6. Giant magnetoresistance effects in 5f-materials

    SciTech Connect

    Havela, L.; Sechovsky, V.; Prokes, K. |

    1995-09-01

    Very large magnetoresistance effects related to reorientation of magnetic moments were observed in a number of U-intermetallics. The resemblance to magnetic multilayers is a basis of discussion of possible mechanisms of these phenomena, in background of which is probably the strong hybridization of 5f- and conduction-electron states. A clear cut evidence of relative contributions of varied scattering rate on one side and carrier concentration on the other side can be presumably obtained from experiments on samples with controlled disorder.

  7. Angular dependence of anisotropic magnetoresistance in magnetic systems

    SciTech Connect

    Zhang, Steven S.-L. Zhang, Shufeng

    2014-05-07

    Anisotropic magnetoresistance (AMR), whose physical origin is attributed to the combination of spin dependent scattering and spin orbital coupling (SOC), usually displays simple angular dependence for polycrystalline ferromagnetic metals. By including generic spin dependent scattering and spin Hall (SH) terms in the Ohm's law, we explicitly show that various magneto-transport phenomena such as anomalous Hall (AH), SH, planar Hall (PH) and AMR could be quantitatively related for bulk polycrystalline ferromagnetic metals. We also discuss how AMR angular dependence is affected by the presence of interfacial SOC in magnetic layered structure.

  8. Negative magnetoresistance in a low-k dielectric

    NASA Astrophysics Data System (ADS)

    McGowan, B. T.; Lloyd, J. R.

    2014-12-01

    We observed negative magnetoresistance in amorphous SiCOH, a low-k dielectric, applying modest magnetic fields (<150 Gauss) at room temperature. The conductivity increases with increasing magnetic field. The change in conductivity due to the applied magnetic field increases with electric field and has little or no temperature dependence over the range studied. The magnitude of the effect is independent of the orientation of magnetic field relative to the direction of current flow. The effect is attributed to spin constraints associated with double occupancy of a trap site under the assumption that trap sites which have double occupancy have lower hopping frequencies than traps that have single occupancy.

  9. Negative magnetoresistance in a low-k dielectric

    SciTech Connect

    McGowan, B. T.; Lloyd, J. R.

    2014-12-22

    We observed negative magnetoresistance in amorphous SiCOH, a low-k dielectric, applying modest magnetic fields (<150 Gauss) at room temperature. The conductivity increases with increasing magnetic field. The change in conductivity due to the applied magnetic field increases with electric field and has little or no temperature dependence over the range studied. The magnitude of the effect is independent of the orientation of magnetic field relative to the direction of current flow. The effect is attributed to spin constraints associated with double occupancy of a trap site under the assumption that trap sites which have double occupancy have lower hopping frequencies than traps that have single occupancy.

  10. Percolation Blocking as the Origin of Organic Magneto-resistance

    NASA Astrophysics Data System (ADS)

    Zhao, Jun-Qing; Sun, Ling-Ling; Wang, Ting

    2016-05-01

    In order to identify the elementary mechanisms governing the organic magneto-resistance (OMAR) phenomenon, we demonstrated how the applied magnetic field acts on the variable hopping mobility. Based on a percolation model of hopping between localized states, we introduced an analytic expression for magneto-mobility and thus the OMAR, and discussed the influence of inter-site electronic interaction, operating bias, film thickness, temperature, and material parameters on the OMAR. The double occupied states and the spin selection rules play a major role in the mechanism.

  11. Magnetoresistance of galfenol-based magnetic tunnel junction

    NASA Astrophysics Data System (ADS)

    Gobaut, B.; Vinai, G.; Castán-Guerrero, C.; Krizmancic, D.; Rafaqat, H.; Roddaro, S.; Rossi, G.; Panaccione, G.; Eddrief, M.; Marangolo, M.; Torelli, P.

    2015-12-01

    The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe1-xGax) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude.

  12. Angular dependence of the magnetoresistance in nanoparticle arrays

    NASA Astrophysics Data System (ADS)

    Estévez, V.; Guslienko, K. Y.

    2013-10-01

    The interplay between the ferromagnetism and the charging effects strongly affects the electron transport through nanoparticle arrays when they are placed between two ferromagnetic electrodes with collinear magnetizations. There are oscillations in the current for the parallel orientation of magnetizations, and large values of the tunneling magnetoresistance (TMR). We analyze the transport properties in nanoparticle arrays for the case of noncollinear magnetizations. We show that the I-V and TMR curves strongly depend on the angle θ between the magnetization orientations of both electrodes. Large values of TMR are obtained for several values of θ.

  13. Magnetoresistance of polycrystalline gadolinium with varying grain size

    SciTech Connect

    Chakravorty, Manotosh Raychaudhuri, A. K.

    2015-01-21

    In this paper, we report a study of evolution of low field magnetoresistance (MR) of Gadolinium as the grain size in the sample is changed from few microns (∼4 μm) to the nanoscopic regime (∼35 nm). The low field MR has a clear effect on varying grain size. In large grain sample (few μm), the magnetic domains are controlled by local anisotropy field determined mainly by the magnetocrystalline anisotropy. The low field MR clearly reflects the temperature dependence of the magnetocrystalline anisotropy. For decreasing gain size, the contribution of spin disorder at the grain boundary increases and enhances the local anisotropy field.

  14. The physical mechanism of magnetic field controlled magnetocaloric effect and magnetoresistance in bulk PrGa compound

    PubMed Central

    Zheng, X. Q.; Wu, H.; Chen, J.; Zhang, B.; Li, Y. Q.; Hu, F. X.; Sun, J. R.; Huang, Q. Z.; Shen, B. G.

    2015-01-01

    The PrGa compound shows excellent performance on the magnetocaloric effect (MCE) and magnetoresistance (MR). The physical mechanism of MCE and MR in PrGa compound was investigated and elaborated in detail on the basis of magnetic measurement, heat capacity measurement and neutron powder diffraction (NPD) experiment. New types of magnetic structure and magnetic transition are found. The results of the NPD along with the saturation magnetic moment (MS) and magnetic entropy (SM) indicate that the magnetic moments are randomly distributed within the equivalent conical surface in the ferromagnetic (FM) temperature range. PrGa compound undergoes an FM to FM transition and an FM to paramagnetic (PM) transition as temperature increases. The magnetizing process was discussed in detail and the physical mechanism of the magnetic field controlled magnetocaloric effect (MCE) and the magnetoresistance (MR) was studied. The formation of the plateau on MCE curve was explained and MR was calculated in detail on the basis of the magnetic structure and the analysis of the magnetizing process. The experimental results are in excellent agreement with the calculations. Finally, the expression of MR = β(T)X2 and its application conditions were discussed, where X is M(H)/Meff, and Meff is the paramagnetic effective moment. PMID:26455711

  15. Multiple source heat pump

    DOEpatents

    Ecker, Amir L.

    1983-01-01

    A heat pump apparatus for conditioning a fluid characterized by a fluid handler and path for circulating a fluid in heat exchange relationship with a refrigerant fluid, at least three refrigerant heat exchangers, one for effecting heat exchange with the fluid, a second for effecting heat exchange with a heat exchange fluid, and a third for effecting heat exchange with ambient air; a compressor for compressing the refrigerant; at least one throttling valve connected at the inlet side of a heat exchanger in which liquid refrigerant is vaporized; a refrigerant circuit; refrigerant; a source of heat exchange fluid; heat exchange fluid circuit and pump for circulating the heat exchange fluid in heat exchange relationship with the refrigerant; and valves or switches for selecting the heat exchangers and directional flow of refrigerant therethrough for selecting a particular mode of operation. Also disclosed are a variety of embodiments, modes of operation, and schematics therefor.

  16. 14 CFR 25.1326 - Pitot heat indication systems.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ....1326 Pitot heat indication systems. If a flight instrument pitot heating system is installed, an indication system must be provided to indicate to the flight crew when that pitot heating system is not... pitot heating system is switched “off”. (2) The pitot heating system is switched “on” and any pitot...

  17. 14 CFR 25.1326 - Pitot heat indication systems.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ....1326 Pitot heat indication systems. If a flight instrument pitot heating system is installed, an indication system must be provided to indicate to the flight crew when that pitot heating system is not... pitot heating system is switched “off”. (2) The pitot heating system is switched “on” and any pitot...

  18. 14 CFR 25.1326 - Pitot heat indication systems.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ....1326 Pitot heat indication systems. If a flight instrument pitot heating system is installed, an indication system must be provided to indicate to the flight crew when that pitot heating system is not... pitot heating system is switched “off”. (2) The pitot heating system is switched “on” and any pitot...

  19. 14 CFR 25.1326 - Pitot heat indication systems.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ....1326 Pitot heat indication systems. If a flight instrument pitot heating system is installed, an indication system must be provided to indicate to the flight crew when that pitot heating system is not... pitot heating system is switched “off”. (2) The pitot heating system is switched “on” and any pitot...

  20. 14 CFR 25.1326 - Pitot heat indication systems.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ....1326 Pitot heat indication systems. If a flight instrument pitot heating system is installed, an indication system must be provided to indicate to the flight crew when that pitot heating system is not... pitot heating system is switched “off”. (2) The pitot heating system is switched “on” and any pitot...

  1. Spin-transfer magnetization switching in ordered alloy-based nanopillar devices

    NASA Astrophysics Data System (ADS)

    Mitani, S.

    2011-09-01

    This paper reviews spin-transfer magnetization switching in ordered alloy-based nanopillar devices. L10-ordered FePt was used for one of the earliest demonstrations of spin-transfer switching in perpendicularly magnetized systems. The behaviour of magnetization switching deviates from the predictions based on a macro-spin model, suggesting incoherent magnetization switching in the system with a large perpendicular magnetic anisotropy. The effect of a 90° spin injector on spin-transfer switching was also examined using L10-ordered FePt. Full-Heusler alloys are in another fascinating material class for spin-transfer switching because of their high-spin polarization of conduction electrons and possible small magnetization damping. A B2-ordered Co2FeAl0.5Si0.5-based device showed a low intrinsic critical current density of 9.3 × 106 A cm-2 for spin-transfer switching as well as a relatively large current-perpendicular-to-plane giant-magnetoresistance (CPP-GMR) up to ~9%. The specific physical properties of ordered alloys may be useful for fundamental studies and applications in spin-transfer switching.

  2. High-K MISFET channel mobility from magnetoresistance

    NASA Astrophysics Data System (ADS)

    Bate, R. T.

    2005-03-01

    Carrier trapping in the gate insulator or at the interface with the silicon can depress the effective channel mobility of high-K MISFETs below the drift mobility. This reduction in effective mobility can be distinguished from true mobility reduction due to carrier scattering by using the Hall effect to measure the channel carrier density [1]. However, channel Hall measurements have traditionally required nonstandard multidrain devices, which must be included in the test chip design. We propose measuring the reduction in drain current of conventional transistors by a magnetic field to determine the Hall coefficient. This method, which requires no multidrain devices, could become a routine diagnostic procedure. It is based on a theorem concerning the magnetoresistance of a rectangular plate with perfectly conducting end contacts [2], which has apparently not been tested experimentally, at least on MOSFET's. The validity of the method can be determined by comparison with channel carrier density determined in other ways, including split capacitance on MOSFETS, conventional Hall effect, and Corbino magnetoresistance on MISFETs. Progress toward these goals is described. [1] N.S Saks and A.K Agarwal, Appl. Phys. Letters 77 (20), 3281 -- 3283 (2000); R. T. Bate and W. P. Kirk, Bull. Am. Phys, Soc. March, 2004, Abstract S6.011 [2] H. H. Jenson and H. Smith, J. Phys. C: Solid State, 5, 2867-2880, (1972)

  3. Tunable magnetoresistance in an asymmetrically coupled single-molecule junction.

    PubMed

    Warner, Ben; El Hallak, Fadi; Prüser, Henning; Sharp, John; Persson, Mats; Fisher, Andrew J; Hirjibehedin, Cyrus F

    2015-03-01

    Phenomena that are highly sensitive to magnetic fields can be exploited in sensors and non-volatile memories. The scaling of such phenomena down to the single-molecule level may enable novel spintronic devices. Here, we report magnetoresistance in a single-molecule junction arising from negative differential resistance that shifts in a magnetic field at a rate two orders of magnitude larger than Zeeman shifts. This sensitivity to the magnetic field produces two voltage-tunable forms of magnetoresistance, which can be selected via the applied bias. The negative differential resistance is caused by transient charging of an iron phthalocyanine (FePc) molecule on a single layer of copper nitride (Cu2N) on a Cu(001) surface, and occurs at voltages corresponding to the alignment of sharp resonances in the filled and empty molecular states with the Cu(001) Fermi energy. An asymmetric voltage-divider effect enhances the apparent voltage shift of the negative differential resistance with magnetic field, which inherently is on the scale of the Zeeman energy. These results illustrate the impact that asymmetric coupling to metallic electrodes can have on transport through molecules, and highlight how this coupling can be used to develop molecular spintronic applications. PMID:25622229

  4. Tunable magnetoresistance in an asymmetrically coupled single-molecule junction

    NASA Astrophysics Data System (ADS)

    Warner, Ben; El Hallak, Fadi; Prüser, Henning; Sharp, John; Persson, Mats; Fisher, Andrew J.; Hirjibehedin, Cyrus F.

    2015-03-01

    Phenomena that are highly sensitive to magnetic fields can be exploited in sensors and non-volatile memories. The scaling of such phenomena down to the single-molecule level may enable novel spintronic devices. Here, we report magnetoresistance in a single-molecule junction arising from negative differential resistance that shifts in a magnetic field at a rate two orders of magnitude larger than Zeeman shifts. This sensitivity to the magnetic field produces two voltage-tunable forms of magnetoresistance, which can be selected via the applied bias. The negative differential resistance is caused by transient charging of an iron phthalocyanine (FePc) molecule on a single layer of copper nitride (Cu2N) on a Cu(001) surface, and occurs at voltages corresponding to the alignment of sharp resonances in the filled and empty molecular states with the Cu(001) Fermi energy. An asymmetric voltage-divider effect enhances the apparent voltage shift of the negative differential resistance with magnetic field, which inherently is on the scale of the Zeeman energy. These results illustrate the impact that asymmetric coupling to metallic electrodes can have on transport through molecules, and highlight how this coupling can be used to develop molecular spintronic applications.

  5. Large Magnetoresistance in Nanostructured Armchair Graphene Nanoribbon Junctions

    NASA Astrophysics Data System (ADS)

    Li, Suchun; Son, Young-Woo; Quek, Su Ying

    2014-03-01

    The prospect of all-carbon nanoelectronics has motivated significant interest in the transport of electrons through graphene and graphene nanoribbon (GNR) based junctions.... The weak intrinsic spin-orbit coupling in graphene also makes graphene an attractive candidate for replacing conventional materials in spintronics applications. Several interesting spin transport properties, such as giant magnetoresistance and half-metallicity, have been predicted. Most of these predictions have centered on GNRs with zigzag atomic edges (ZGNRs). On the other hand, significant progress has been made in the controlled atomic-scale synthesis of GNRs with armchair edges (AGNRs), all with specific widths.... Yet, to date, little is known about the potential of such well-defined AGNRs in electronics or spintronics. In this work, we use first principles transport calculations to predict the electron and spin transport properties of nanostructured AGNR junctions. We predict a large magnetoresistance of ~ 900%, related to resonant transmission channels close to the Fermi energy. We gratefully acknowledge helpful discussions with YP Feng and CK Gan, funding from Singapore NRF and A*STAR, Korea MEST NRF, and HJ Choi for use of the SCARLET code (PRB 76, 155420, 2007).

  6. Landau levels and longitudinal magnetoresistance in generalized Weyl semimetals

    NASA Astrophysics Data System (ADS)

    Li, Xiao; Roy, Bitan

    The notion of axial anomaly is a venerable concept in quantum field theory that has received ample attention in condensed matter physics due to the discovery of Weyl materials (WSMs). In such systems Kramers non-degenerate bands touch at isolated points in the Brillouin zone that act as (anti)monopoles of Berry flux, and the monopole number (m) defines the topological invariant of the system. Although so far only simple WSMs (with m = 1) has been found in various inversion and/or time-reversal asymmetric systems, generalized Weyl semimetals with m > 1 can also be found in nature, for example double-Weyl semimetals in HgCr2Se4 and SrSi2 and triple-Weyl semimetals. In this work, we demonstrate the Landau level spectrum in generalized Weyl systems and its ramification on longitudinal magnetotransport measurements. We show that in the quantum limit generalized Weyl semimetals display negative longitudinal magnetoresistance due to the chiral anomaly. Moreover, the magnetoresistance has nontrivial dependence on the relative orientation of the external fields with the crystallographic axis, stemming from underlying anisotropic quasiparticle dispersion in the pristine system. Our theory can thus provide diagnostic tools to pin the quasiparticle properties in Weyl systems.

  7. Linear magnetoresistance in Ag2+δSe thin films

    NASA Astrophysics Data System (ADS)

    von Kreutzbruck, M.; Lembke, G.; Mogwitz, B.; Korte, C.; Janek, J.

    2009-01-01

    In the nonstoichiometric low-temperature phase of silver selenide a very small silver excess within the semiconducting silver selenide matrix in the order of 0.01% is sufficient to generate a linear magnetoresistance (LMR) of more than 300% at 5 T, which does not saturate at fields up to 60 T. Different theoretical models have been proposed to explain this unusual magnetoresistance (MR) behavior, among them a random resistor network consisting of four-terminal resistor units. According to this model the LMR and the crossover field from linear to quadratic behavior are primarily controlled by both the spatial distribution of the charge-carrier mobility and its average value, being essentially functions of the local and average compositions. Here we report measurements on silver-rich thin AgxSe films with a thickness between 20 nm and 2μm , which show an increasing average mobility in conjunction with an enhanced MR for increasing film thickness. We found a linear scaling between the size of the transverse LMR and the crossover field, as predicted by the theory. For films thinner than about 100 nm the MR with field directed in the sample plane shows a breakdown of the LMR, revealing the physical length scale of the inhomegeneities in thin AgxSe devices.

  8. Negative longitudinal magnetoresistance in Dirac and Weyl metals

    NASA Astrophysics Data System (ADS)

    Burkov, A. A.

    2015-06-01

    It has recently been found that Dirac and Weyl metals are characterized by an unusual weak-field longitudinal magnetoresistance: large, negative, and quadratic in the magnetic field. This has been shown to arise from the chiral anomaly, i.e., nonconservation of the chiral charge in the presence of external electric and magnetic fields, oriented collinearly. In this paper we report on a theory of this effect in both Dirac and Weyl metals. We demonstrate that this phenomenon contains two important ingredients. One is the magnetic-field-induced coupling between the chiral and the total (or vector, in relativistic field theory terminology) charge densities. This arises from the Berry curvature and is present in principle whenever the Berry curvature is nonzero, i.e., is nonspecific to Dirac and Weyl metals. This coupling, however, leads to a large negative quadratic magnetoresistance only when the second ingredient is present, namely when the chiral charge density is a nearly conserved quantity with a long relaxation time. This property is specific to Dirac and Weyl metals and is realized only when the Fermi energy is close to Dirac or Weyl nodes, expressing an important low-energy property of these materials, emergent chiral symmetry.

  9. Triggered plasma opening switch

    DOEpatents

    Mendel, Clifford W.

    1988-01-01

    A triggerable opening switch for a very high voltage and current pulse includes a transmission line extending from a source to a load and having an intermediate switch section including a plasma for conducting electrons between transmission line conductors and a magnetic field for breaking the plasma conduction path and magnetically insulating the electrons when it is desired to open the switch.

  10. Apollo Ring Optical Switch

    SciTech Connect

    Maestas, J.H.

    1987-03-01

    An optical switch was designed, built, and installed at Sandia National Laboratories in Albuquerque, New Mexico, to facilitate the integration of two Apollo computer networks into a single network. This report presents an overview of the optical switch as well as its layout, switch testing procedure and test data, and installation.

  11. Triggered plasma opening switch

    SciTech Connect

    Mendel, C W

    1988-02-23

    A triggerable opening switch for a very high voltage and current pulse includes a transmission line extending from a source to a load and having an intermediate switch section including a plasma for conducting electrons between transmission line conductors and a magnetic field for breaking the plasma conduction path and magnetically insulating the electrons when it is desired to open the switch.

  12. REMOTE CONTROLLED SWITCHING DEVICE

    DOEpatents

    Hobbs, J.C.

    1959-02-01

    An electrical switching device which can be remotely controlled and in which one or more switches may be accurately operated at predetermined times or with predetermined intervening time intervals is described. The switching device consists essentially of a deck, a post projecting from the deck at right angles thereto, cam means mounted for rotation around said posts and a switch connected to said deck and actuated by said cam means. Means is provided for rotating the cam means at a constant speed and the switching apparatus is enclosed in a sealed container with external adjusting means and electrical connection elements.

  13. Enhancement of tunnel magnetoresistance in magnetic tunnel junction by a superlattice barrier

    SciTech Connect

    Chen, C. H.; Hsueh, W. J.

    2014-01-27

    Tunnel magnetoresistance of magnetic tunnel junction improved by a superlattice barrier composed of alternate layers of a nonmagnetic metal and an insulator is proposed. The forbidden band of the superlattice is used to predict the low transmission range in the superlattice barrier. By forbidding electron transport in the anti-parallel configuration, the tunnel magnetoresistance is enhanced in the superlattice junction. The results show that the tunnel magnetoresistance ratio for a superlattice magnetic tunnel junction is greater than that for traditional single or double barrier junctions.

  14. Large Magnetoresistance at Room Temperature in Ferromagnet/Topological Insulator Contacts

    NASA Astrophysics Data System (ADS)

    Majumder, Sarmita; Guchhait, Samaresh; Dey, Rik; Register, Leonard Franklin; Banerjee, Sanjay K.

    2016-07-01

    We report magnetoresistance for current flow through iron/topological insulator (Fe/TI) and Fe/evaporated-oxide/TI contacts when a magnetic field is used to initially orient the magnetic alignment of the incorporated ferromagnetic Fe bar, at temperatures ranging from 100 K to room temperature. This magnetoresistance is associated with the relative orientation of the Fe bar magnetization and spin-polarization of electrons moving on the surface of the TI with helical spin-momentum locking. The magnitude of the observed magnetoresistance is relatively large compared to that observed in prior work.

  15. A Wireless Magnetoresistive Sensing System for an Intraoral Tongue-Computer Interface

    PubMed Central

    Park, Hangue; Kiani, Mehdi; Lee, Hyung-Min; Kim, Jeonghee; Block, Jacob; Gosselin, Benoit; Ghovanloo, Maysam

    2015-01-01

    Tongue drive system (TDS) is a tongue-operated, minimally invasive, unobtrusive, and wireless assistive technology (AT) that infers users’ intentions by detecting their voluntary tongue motion and translating them into user-defined commands. Here we present the new intraoral version of the TDS (iTDS), which has been implemented in the form of a dental retainer. The iTDS system-on-a-chip (SoC) features a configurable analog front-end (AFE) that reads the magnetic field variations inside the mouth from four 3-axial magnetoresistive sensors located at four corners of the iTDS printed circuit board (PCB). A dual-band transmitter (Tx) on the same chip operates at 27 and 432 MHz in the Industrial/Scientific/Medical (ISM) band to allow users to switch in the presence of external interference. The Tx streams the digitized samples to a custom-designed TDS universal interface, built from commercial off-the-shelf (COTS) components, which delivers the iTDS data to other devices such as smartphones, personal computers (PC), and powered wheelchairs (PWC). Another key block on the iTDS SoC is the power management integrated circuit (PMIC), which provides individually regulated and duty-cycled 1.8 V supplies for sensors, AFE, Tx, and digital control blocks. The PMIC also charges a 50 mAh Li-ion battery with constant current up to 4.2 V, and recovers data and clock to update its configuration register through a 13.56 MHz inductive link. The iTDS SoC has been implemented in a 0.5-μm standard CMOS process and consumes 3.7 mW on average. PMID:23853258

  16. Linear response to a heat-driven spin torque

    NASA Astrophysics Data System (ADS)

    Fitoussi, Lucas; Vetro, Francesco Antonio; Caspers, Christian; Gravier, Laurent; Yu, Haiming; Ansermet, Jean-Philippe

    2015-04-01

    The existence of a heat-driven spin torque is demonstrated using Co/Cu/Co spin valves embedded in metallic nanowires. Heat currents flowing in one direction or its opposite were obtained by heating optically one end or the other of the nanowires. The spin torque associated with the heat-driven spin current pushes the magnetization out of equilibrium, resulting in a change of the magnetoresistance, which is detected using a charge current small enough not to cause heating or induced fields of any significance. The giant magnetoresistance response to this torque peaks with the magnetic susceptibility, whereas the spurious signal coming from the temperature dependence of the resistance produces merely a field independent baseline.

  17. Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe.

    PubMed

    Kriegner, D; Výborný, K; Olejník, K; Reichlová, H; Novák, V; Marti, X; Gazquez, J; Saidl, V; Němec, P; Volobuev, V V; Springholz, G; Holý, V; Jungwirth, T

    2016-01-01

    Commercial magnetic memories rely on the bistability of ordered spins in ferromagnetic materials. Recently, experimental bistable memories have been realized using fully compensated antiferromagnetic metals. Here we demonstrate a multiple-stable memory device in epitaxial MnTe, an antiferromagnetic counterpart of common II-VI semiconductors. Favourable micromagnetic characteristics of MnTe allow us to demonstrate a smoothly varying zero-field antiferromagnetic anisotropic magnetoresistance (AMR) with a harmonic angular dependence on the writing magnetic field angle, analogous to ferromagnets. The continuously varying AMR provides means for the electrical read-out of multiple-stable antiferromagnetic memory states, which we set by heat-assisted magneto-recording and by changing the writing field direction. The multiple stability in our memory is ascribed to different distributions of domains with the Néel vector aligned along one of the three magnetic easy axes. The robustness against strong magnetic field perturbations combined with the multiple stability of the magnetic memory states are unique properties of antiferromagnets. PMID:27279433

  18. Magnetoresistance in i-R-Cd icosahedral quasicrystals (R=Y, Gd)

    NASA Astrophysics Data System (ADS)

    Saraswat, Garima; Popović, Dragana; Kong, Tai; Bud'Ko, Sergey L.; Canfield, Paul C.

    We use magnetoresistance (MR) to probe the electronic properties of the recently discovered binary quasicrystals (QCs) i-Gd-Cd and i-Y-Cd, with and without local magnetic moments, respectively. DC magnetization has revealed spin-glass freezing in i-Gd-Cd at a temperature Tf = 4 . 6 K. MR was measured at 1 . 6 <= T (K) <= 300 and in magnetic fields H up to 12 T. The most interesting behavior is observed in i-Gd-Cd, in which the MR exhibits thermo-magnetic history dependence at low T. In particular, there is a clear difference between the ZFC and FC values of the low-field positive MR. In contrast, the i-Y-Cd MR does not depend on magnetic history. The onset of the history dependent MR at T ~ 20 K >Tf , when the QC with local magnetic moments is cooled in a high field of 12 T, may be related to the formation of magnetic clusters above Tf, as inferred from the magnetization and specific heat studies. Possible mechanisms responsible for the striking coupling between charge transport and local magnetic environment observed in the MR will be discussed. Work at the NHMFL supported by NSF Grant No. DMR-1307075, the NSF Cooperative Agreement No. DMR-0654118 and the State of Florida. Work at Ames Lab (TK, SLB and PCC) supported by the U.S. D.O.E / B.E.S under Contract No. DE-AC02-07CH11358.

  19. Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe.

    PubMed

    Kriegner, D; Výborný, K; Olejník, K; Reichlová, H; Novák, V; Marti, X; Gazquez, J; Saidl, V; Němec, P; Volobuev, V V; Springholz, G; Holý, V; Jungwirth, T

    2016-06-09

    Commercial magnetic memories rely on the bistability of ordered spins in ferromagnetic materials. Recently, experimental bistable memories have been realized using fully compensated antiferromagnetic metals. Here we demonstrate a multiple-stable memory device in epitaxial MnTe, an antiferromagnetic counterpart of common II-VI semiconductors. Favourable micromagnetic characteristics of MnTe allow us to demonstrate a smoothly varying zero-field antiferromagnetic anisotropic magnetoresistance (AMR) with a harmonic angular dependence on the writing magnetic field angle, analogous to ferromagnets. The continuously varying AMR provides means for the electrical read-out of multiple-stable antiferromagnetic memory states, which we set by heat-assisted magneto-recording and by changing the writing field direction. The multiple stability in our memory is ascribed to different distributions of domains with the Néel vector aligned along one of the three magnetic easy axes. The robustness against strong magnetic field perturbations combined with the multiple stability of the magnetic memory states are unique properties of antiferromagnets.

  20. Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe

    PubMed Central

    Kriegner, D.; Výborný, K.; Olejník, K.; Reichlová, H.; Novák, V.; Marti, X.; Gazquez, J.; Saidl, V.; Němec, P.; Volobuev, V. V.; Springholz, G.; Holý, V.; Jungwirth, T.

    2016-01-01

    Commercial magnetic memories rely on the bistability of ordered spins in ferromagnetic materials. Recently, experimental bistable memories have been realized using fully compensated antiferromagnetic metals. Here we demonstrate a multiple-stable memory device in epitaxial MnTe, an antiferromagnetic counterpart of common II–VI semiconductors. Favourable micromagnetic characteristics of MnTe allow us to demonstrate a smoothly varying zero-field antiferromagnetic anisotropic magnetoresistance (AMR) with a harmonic angular dependence on the writing magnetic field angle, analogous to ferromagnets. The continuously varying AMR provides means for the electrical read-out of multiple-stable antiferromagnetic memory states, which we set by heat-assisted magneto-recording and by changing the writing field direction. The multiple stability in our memory is ascribed to different distributions of domains with the Néel vector aligned along one of the three magnetic easy axes. The robustness against strong magnetic field perturbations combined with the multiple stability of the magnetic memory states are unique properties of antiferromagnets. PMID:27279433

  1. Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe

    NASA Astrophysics Data System (ADS)

    Kriegner, D.; Výborný, K.; Olejník, K.; Reichlová, H.; Novák, V.; Marti, X.; Gazquez, J.; Saidl, V.; Němec, P.; Volobuev, V. V.; Springholz, G.; Holý, V.; Jungwirth, T.

    2016-06-01

    Commercial magnetic memories rely on the bistability of ordered spins in ferromagnetic materials. Recently, experimental bistable memories have been realized using fully compensated antiferromagnetic metals. Here we demonstrate a multiple-stable memory device in epitaxial MnTe, an antiferromagnetic counterpart of common II-VI semiconductors. Favourable micromagnetic characteristics of MnTe allow us to demonstrate a smoothly varying zero-field antiferromagnetic anisotropic magnetoresistance (AMR) with a harmonic angular dependence on the writing magnetic field angle, analogous to ferromagnets. The continuously varying AMR provides means for the electrical read-out of multiple-stable antiferromagnetic memory states, which we set by heat-assisted magneto-recording and by changing the writing field direction. The multiple stability in our memory is ascribed to different distributions of domains with the Néel vector aligned along one of the three magnetic easy axes. The robustness against strong magnetic field perturbations combined with the multiple stability of the magnetic memory states are unique properties of antiferromagnets.

  2. Spin orbital torque driven magnetization switching in magnetic tunnel junction with inter-layer exchange coupling

    SciTech Connect

    Xu, Lei; Ma, Zhongshui; Wei, Dan

    2015-01-14

    The switching processes of elliptically shaped magnetic tunnel junction bits with the structure Ta/CoFeB/MgO/CoFeB have been studied by the micromagnetic models. By comparing the tunneling magneto-resistance minor and major loops calculated by our model with related experimental results, we found that the inter-layer exchange coupling between the two CoFeB layers and a reduced saturation magnetization M{sub s} distribution at the edge of the elliptical bit should be included. The chosen strength of the inter-layer exchange coupling also matches well with experimental observations. The current induced magnetization switching is generated from the spin Hall effect in the Ta layer. The critical switching currents calculated by our model are coincident with experiment. This shows the reliability of our micromagnetic model with the spin orbital torque term.

  3. Magnetoresistance and magnetodynamics in thin-film magnetic heterostructures

    NASA Astrophysics Data System (ADS)

    Parks, Sarah Cunegunda

    Current information technology relies heavily on magnetism. Gaining a deeper understanding of magnetism, and in particular spin dynamics, is important to today's quickly evolving technology. In this thesis, two separate studies have been conducted to help aid in the study of spin dynamics. The first project explores giant magnetoresistive (GMR) devices. These devices are presumed to be made of materials that are radiation hard with respect to both photons and particles, potentially increasing their utility for nuclear energy and space based applications. However, to date there are few detailed studies of magnetism and GMR devices in hard radiation environments. This project utilizes the facilities at The Ohio State University Nuclear Reactor Laboratory to study the effects of gamma ray and neutron irradiation on GMR samples. The structure used in this experiment is a standard GMR trilayer consisting of a thin, non-magnetic layer placed between thin ferromagnetic layers, with one of the two magnetic layers in contact with an exchange biased antiferromagnet (Py/Cu/Py/FeMn/Ge). To study the effects of radiation three types of magnetic measurements, vibrating sample magnetometery (VSM), magnetoresistance (MR), and magneto-optical Kerr effect (MOKE), are taken and correlated pre and post gamma radiation. We present characterization of the devices pre and post gamma irradiation for multiple device geometries and radiation doses up to 50 Mrad for gamma rays and a minimum fast flux (En>0.5MeV) of 4.2E12 nv for neutrons, both of which are well above the failure threshold for semiconducting devices. The second study that was done in this thesis uses current-induced magnetodynamics in giant magnetoresistive (GMR) trilayers. These devices promise a novel platform for microwave electronics. One of the keys to developing this potential has been the development of nanoscale fabrication techniques, typically resulting in either nanopillar or point-contact geometries. As a result

  4. Optoelectronic techniques for broadband switching

    NASA Astrophysics Data System (ADS)

    Su, S. F.; Jou, L.; Lenart, J.

    1988-01-01

    Optoelectronic switching employs a hybrid optical/electronic principle to perform the switching function and is applicable for either analog broadband or high-bit rate digital switching. The major advantages of optoelectronic switching include high isolation, low crosstalk, small physical size, light weight, and low power consumption. These advantages make optoelectronic switching an excellent candidate for on-board satellite switching. This paper describes a number of optoelectronic switching architectures. System components required for implementing these switching architectures are discussed. Performance of these architectures are evaluated by calculating their crosstalk, isolation, insertion loss, matrix size, drive power, throughput, and switching speed. Technologies needed for monolithic optoelectronic switching are also identified.

  5. Space magnetometer based on an anisotropic magnetoresistive hybrid sensor

    NASA Astrophysics Data System (ADS)

    Brown, P.; Whiteside, B. J.; Beek, T. J.; Fox, P.; Horbury, T. S.; Oddy, T. M.; Archer, M. O.; Eastwood, J. P.; Sanz-Hernández, D.; Sample, J. G.; Cupido, E.; O'Brien, H.; Carr, C. M.

    2014-12-01

    We report on the design and development of a low resource, dual sensor vector magnetometer for space science applications on very small spacecraft. It is based on a hybrid device combining an orthogonal triad of commercial anisotropic magnetoresistive (AMR) sensors with a totem pole H-Bridge drive on a ceramic substrate. The drive enables AMR operation in the more sensitive flipped mode and this is achieved without the need for current spike transmission down a sensor harness. The magnetometer has sensitivity of better than 3 nT in a 0-10 Hz band and a total mass of 104 g. Three instruments have been launched as part of the TRIO-CINEMA space weather mission, inter-calibration against the International Geomagnetic Reference Field model makes it possible to extract physical signals such as field-aligned current deflections of 20-60 nT within an approximately 45 000 nT ambient field.

  6. Giant magnetoresistive heterogeneous alloys and method of making same

    DOEpatents

    Bernardi, J.J.; Thomas, G.; Huetten, A.R.

    1999-03-16

    The inventive material exhibits giant magnetoresistance upon application of an external magnetic field at room temperature. The hysteresis is minimal. The inventive material has a magnetic phase formed by eutectic decomposition. The bulk material comprises a plurality of regions characterized by (a) the presence of magnetic lamellae wherein the lamellae are separated by a distance smaller than the mean free path of the conduction electrons, and (b) a matrix composition having nonmagnetic properties that is interposed between the lamellae within the regions. The inventive, rapidly quenched, eutectic alloys form microstructure lamellae having antiparallel antiferromagnetic coupling and give rise to GMR properties. The inventive materials made according to the inventive process yielded commercially acceptable quantities and timeframes. Annealing destroyed the microstructure lamellae and the GMR effect. Noneutectic alloys did not exhibit the antiparallel microstructure lamellae and did not possess GMR properties. 7 figs.

  7. Giant magnetoresistive heterogeneous alloys and method of making same

    DOEpatents

    Bernardi, J.J.; Thomas, G.; Huetten, A.R.

    1998-10-20

    The inventive material exhibits giant magnetoresistance upon application of an external magnetic field at room temperature. The hysteresis is minimal. The inventive material has a magnetic phase formed by eutectic decomposition. The bulk material comprises a plurality of regions characterized by (a) the presence of magnetic lamellae wherein the lamellae are separated by a distance smaller than the mean free path of the conduction electrons, and (b) a matrix composition having nonmagnetic properties that is interposed between the lamellae within the regions. The inventive, rapidly quenched, eutectic alloys form microstructure lamellae having antiparallel antiferromagnetic coupling and give rise to GMR properties. The inventive materials made according to the inventive process yielded commercially acceptable quantities and timeframes. Annealing destroyed the microstructure lamellae and the GMR effect. Noneutectic alloys did not exhibit the antiparallel microstructure lamellae and did not possess GMR properties. 7 figs.

  8. Giant magnetoresistive heterogeneous alloys and method of making same

    DOEpatents

    Bernardi, Johannes J.; Thomas, Gareth; Huetten, Andreas R.

    1998-01-01

    The inventive material exhibits giant magnetoresistance upon application of an external magnetic field at room temperature. The hysteresis is minimal. The inventive material has a magnetic phase formed by eutectic decomposition. The bulk material comprises a plurality of regions characterized by a) the presence of magnetic lamellae wherein the lamellae are separated by a distance smaller than the mean free path of the conduction electrons, and b) a matrix composition having nonmagnetic properties that is interposed between the lamellae within the regions. The inventive, rapidly quenched, eutectic alloys form microstructure lamellae having antiparallel antiferromagnetic coupling and give rise to GMR properties. The inventive materials made according to the inventive process yielded commercially acceptable quantities and timeframes. Annealing destroyed the microstructure lamellae and the GMR effect. Noneutectic alloys did not exhibit the antiparallel microstructure lamellae and did not possess GMR properties.

  9. Giant magnetoresistive heterogeneous alloys and method of making same

    DOEpatents

    Bernardi, Johannes J.; Thomas, Gareth; Huetten, Andreas R.

    1999-01-01

    The inventive material exhibits giant magnetoresistance upon application of an external magnetic field at room temperature. The hysteresis is minimal. The inventive material has a magnetic phase formed by eutectic decomposition. The bulk material comprises a plurality of regions characterized by a) the presence of magnetic lamellae wherein the lamellae are separated by a distance smaller than the mean free path of the conduction electrons, and b) a matrix composition having nonmagnetic properties that is interposed between the lamellae within the regions. The inventive, rapidly quenched, eutectic alloys form microstructure lamellae having antiparallel antiferromagnetic coupling and give rise to GMR properties. The inventive materials made according to the inventive process yielded commercially acceptable quantities and timeframes. Annealing destroyed the microstructure lamellae and the GMR effect. Noneutectic alloys did not exhibit the antiparallel microstructure lamellae and did not possess GMR properties.

  10. Micromagnetic modeling of overlaid exchange-biased giant magnetoresistance head

    NASA Astrophysics Data System (ADS)

    Zheng, Yuankai; You, Dan; Wu, Yihong

    2002-05-01

    Overlaid exchange-biased structures for giant magnetoresistance head have been proposed and investigated. A home-developed three-dimensional micromagnetic modeling tool has been used to simulate synthetic antiferromagnetic spin valves of this type of biased structure with dimensions of 100 nm in width and 80 nm in height. Simulation results showed that, with a properly chosen antiferromagnetic material and structure, the exchange-biasing field could be made sufficient to suppress the noise without severely reducing the sensitivity. The sensitivity of overlaid exchange-biased spin valves is 1.73 times that of the abutted hard biased ones. Microtrack profiles showed that side reading effect could be suppressed effectively with an effective exchange-biasing field over 600 Oe.

  11. Interlayer transverse magnetoresistance in the presence of an anisotropic pseudogap

    NASA Astrophysics Data System (ADS)

    Smith, M. F.; McKenzie, Ross H.

    2009-12-01

    The interlayer magnetoresistance of a quasi-two-dimensional layered metal with a d -wave pseudogap is calculated semiclassically. An expression for the interlayer resistivity as a function of the strength and direction of the magnetic field, the magnitude of the pseudogap, temperature, and scattering rate is obtained. We find that the pseudogap, by introducing low-energy nodal quasiparticle contours, smooths the dependence on field direction in a manner characteristic of its anisotropy. We thus propose that interlayer resistance measurements under a strong field of variable orientation can be used to fully characterize an anisotropic pseudogap. The general result is applied to the case of a magnetic field parallel to the conducting layers using a model band structure appropriate for overdoped Tℓ2201 .

  12. Theory of spin Hall magnetoresistance (SMR) and related phenomena.

    PubMed

    Chen, Yan-Ting; Takahashi, Saburo; Nakayama, Hiroyasu; Althammer, Matthias; Goennenwein, Sebastian T B; Saitoh, Eiji; Bauer, Gerrit E W

    2016-03-16

    We review the so-called spin Hall magnetoresistance (SMR) in bilayers of a magnetic insulator and a metal, in which spin currents are generated in the normal metal by the spin Hall effect. The associated angular momentum transfer to the ferromagnetic layer and thereby the electrical resistance is modulated by the angle between the applied current and the magnetization direction. The SMR provides a convenient tool to non-invasively measure the magnetization direction and spin-transfer torque to an insulator. We introduce the minimal theoretical instruments to calculate the SMR, i.e. spin diffusion theory and quantum mechanical boundary conditions. This leads to a small set of parameters that can be fitted to experiments. We discuss the limitations of the theory as well as alternative mechanisms such as the ferromagnetic proximity effect and Rashba spin-orbit torques, and point out new developments.

  13. Gamma Irradiation of Magnetoresistive Sensors for Planetary Exploration

    PubMed Central

    Sanz, Ruy; Fernández, Ana B.; Dominguez, Jose A.; Martín, Boris; Michelena, Marina D.

    2012-01-01

    A limited number of Anisotropic Magnetoresistive (AMR) commercial-off-the-shelf (COTS) magnetic sensors of the HMC series by Honeywell, with and without integrated front-end electronics, were irradiated with gamma rays up to a total irradiation dose of 200 krad (Si), following the ESCC Basic Specification No. 22900. Due to the magnetic cleanliness required for these tests a special set-up was designed and successfully employed. Several parameters of the sensors were monitored during testing and the results are reported in this paper. The authors conclude that AMR sensors without front-end electronics seem to be robust against radiation doses of up to 200 krad (Si) with a dose rate of 5 krad (Si)/hour and up to a resolution of tens of nT, but sensors with an integrated front-end seem to be more vulnerable to radiation. PMID:22666039

  14. Large anisotropic magnetoresistance of ruthenium-based Heusler alloys

    NASA Astrophysics Data System (ADS)

    Mizusaki, S.; Ohnishi, T.; Douzono, A.; Nagata, Y.; Ozawa, T. C.; Samata, H.; Noro, Y.

    2009-04-01

    Anomalous magnetic behavior was found in the polycrystalline Heusler alloy system Ru2Mn1-xFexGe. Samples of x =0 and 1.0 show no magnetoresistance (MR); however, the anisotropic MR effect is observed for x =0.5 (MR ratios of -4% and +2% are observed under parallel and perpendicular configurations of applied field and applied current, respectively). Moreover, magnetic measurement revealed that the sample of x =0 is antiferromagnetic, whereas the samples of x =0.5 and 1.0 are ferromagnetic with Curie temperatures of 270 and 490 K, respectively. The saturation magnetization and coercivity at 5 K are 3.1μB/f.u. and negligibly small for x =1.0 and 1.8μB/f.u. and 0.1 T for x =0.5, respectively. The MR effect is explained by a model in which antiferromagnetic and ferromagnetic domains coexist.

  15. Theory of spin Hall magnetoresistance (SMR) and related phenomena.

    PubMed

    Chen, Yan-Ting; Takahashi, Saburo; Nakayama, Hiroyasu; Althammer, Matthias; Goennenwein, Sebastian T B; Saitoh, Eiji; Bauer, Gerrit E W

    2016-03-16

    We review the so-called spin Hall magnetoresistance (SMR) in bilayers of a magnetic insulator and a metal, in which spin currents are generated in the normal metal by the spin Hall effect. The associated angular momentum transfer to the ferromagnetic layer and thereby the electrical resistance is modulated by the angle between the applied current and the magnetization direction. The SMR provides a convenient tool to non-invasively measure the magnetization direction and spin-transfer torque to an insulator. We introduce the minimal theoretical instruments to calculate the SMR, i.e. spin diffusion theory and quantum mechanical boundary conditions. This leads to a small set of parameters that can be fitted to experiments. We discuss the limitations of the theory as well as alternative mechanisms such as the ferromagnetic proximity effect and Rashba spin-orbit torques, and point out new developments. PMID:26881498

  16. Theory of spin Hall magnetoresistance (SMR) and related phenomena

    NASA Astrophysics Data System (ADS)

    Chen, Yan-Ting; Takahashi, Saburo; Nakayama, Hiroyasu; Althammer, Matthias; Goennenwein, Sebastian T. B.; Saitoh, Eiji; Bauer, Gerrit E. W.

    2016-03-01

    We review the so-called spin Hall magnetoresistance (SMR) in bilayers of a magnetic insulator and a metal, in which spin currents are generated in the normal metal by the spin Hall effect. The associated angular momentum transfer to the ferromagnetic layer and thereby the electrical resistance is modulated by the angle between the applied current and the magnetization direction. The SMR provides a convenient tool to non-invasively measure the magnetization direction and spin-transfer torque to an insulator. We introduce the minimal theoretical instruments to calculate the SMR, i.e. spin diffusion theory and quantum mechanical boundary conditions. This leads to a small set of parameters that can be fitted to experiments. We discuss the limitations of the theory as well as alternative mechanisms such as the ferromagnetic proximity effect and Rashba spin-orbit torques, and point out new developments.

  17. Space magnetometer based on an anisotropic magnetoresistive hybrid sensor.

    PubMed

    Brown, P; Whiteside, B J; Beek, T J; Fox, P; Horbury, T S; Oddy, T M; Archer, M O; Eastwood, J P; Sanz-Hernández, D; Sample, J G; Cupido, E; O'Brien, H; Carr, C M

    2014-12-01

    We report on the design and development of a low resource, dual sensor vector magnetometer for space science applications on very small spacecraft. It is based on a hybrid device combining an orthogonal triad of commercial anisotropic magnetoresistive (AMR) sensors with a totem pole H-Bridge drive on a ceramic substrate. The drive enables AMR operation in the more sensitive flipped mode and this is achieved without the need for current spike transmission down a sensor harness. The magnetometer has sensitivity of better than 3 nT in a 0-10 Hz band and a total mass of 104 g. Three instruments have been launched as part of the TRIO-CINEMA space weather mission, inter-calibration against the International Geomagnetic Reference Field model makes it possible to extract physical signals such as field-aligned current deflections of 20-60 nT within an approximately 45,000 nT ambient field.

  18. Characteristics of the dual-bridge giant magnetoresistance magnetometer.

    PubMed

    Jeng, Jen-Tzong; Hsu, Ting-Yu

    2011-03-01

    The responsivity and the field noise characteristics of the giant magnetoresistance (GMR) magnetometer driven by an alternating magnetic field are investigated. The harmonic spectrum of the sensor voltage shows that only the odd harmonics of excitation frequency are sensitive to the external dc field. To cancel out the even harmonics, the dual-bridge GMR magnetometer with the balanced output is proposed. With the dual-bridge configuration, the field-to-voltage transfer coefficient is doubled and the field noise is reduced by a factor of 1.4. The minimum field noise is 7 nT∕√Hz at 1 Hz with the ac excitation power of 5.5 mW. The proposed sensor is suitable for the electronic compass application.

  19. Magnetoresistance of galfenol-based magnetic tunnel junction

    SciTech Connect

    Gobaut, B.; Vinai, G.; Castán-Guerrero, C.; Krizmancic, D.; Panaccione, G.; Torelli, P.; Rafaqat, H.; Roddaro, S.; Rossi, G.; Eddrief, M.; Marangolo, M.

    2015-12-15

    The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe{sub 1-x}Ga{sub x}) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude.

  20. Impurity scattering from {delta}-layers in giant magnetoresistance systems

    SciTech Connect

    Marrows, C. H.; Hickey, B. J.

    2001-06-01

    The properties of the archetypal Co/Cu giant magnetoresistance (GMR) spin-valve structure have been modified by the insertion of very thin (submonolayer) {delta}-layers of various elements at different points within the Co layers, and at the Co/Cu interface. Different effects are observed depending on the nature of the impurity, its position within the periodic table, and its location within the spin valve. The GMR can be strongly enhanced or suppressed for various specific combinations of these parameters, giving insight into the microscopic mechanisms giving rise to the GMR. In particular, the doping of Fe and Ni into the spin valve close to, but not at the interface, leads to an increase in GMR, as does the introduction of Cu, a nonmagnetic impurity, into the Co layers.

  1. Finite-size effects in giant magnetoresistance multilayers

    SciTech Connect

    Perez, M.; Marrows, C. H.; Hickey, B. J.

    2001-06-01

    It is of interest to determine the characteristic length scale that determines giant magnetoresistance (GMR). In order to understand this behavior, GMR multilayers of Co/Ru and Co/Cu have been studied at a temperature of 4.2 K. The total thickness of Co/Ru multilayers has been varied from 96 to 1654 Aa and Co/Cu from 77 to 2712 Aa by increasing the number of bilayers (N). It has been observed that GMR increases with the number of bilayers and more than 20 bilayers for Co/Ru and 50 for Co/Cu are needed to reach the saturation value. {copyright} 2001 American Institute of Physics.

  2. Magnetoresistance measurement of permalloy thin film rings with triangular fins

    NASA Astrophysics Data System (ADS)

    Lai, Mei-Feng; Hsu, Chia-Jung; Liao, Chun-Neng; Chen, Ying-Jiun; Wei, Zung-Hang

    2010-01-01

    Magnetization reversals in permalloy rings controlled by nucleation sites using triangular fins at the same side and diagonal with respect to the field direction are demonstrated by magnetoresistance measurement and micromagnetic simulation. In the ring with triangular fins at the same side, there exists two-step reversal from onion to flux-closure state (or vortex state) and then from flux-closure (or vortex state) to reverse onion state; in the ring with diagonal triangular fins, one-step reversal occurs directly from onion to reverse onion state. The reversal processes are repeatable and controllable in contrast to an ideal ring without triangular fins where one-step and two-step reversals occur randomly in sweep-up and sweep-down processes.

  3. Resistance transition assisted geometry enhanced magnetoresistance in semiconductors

    SciTech Connect

    Luo, Zhaochu; Zhang, Xiaozhong

    2015-05-07

    Magnetoresistance (MR) reported in some non-magnetic semiconductors (particularly silicon) has triggered considerable interest owing to the large magnitude of the effect. Here, we showed that MR in lightly doped n-Si can be significantly enhanced by introducing two diodes and proper design of the carrier path [Wan, Nature 477, 304 (2011)]. We designed a geometrical enhanced magnetoresistance (GEMR) device whose room-temperature MR ratio reaching 30% at 0.065 T and 20 000% at 1.2 T, respectively, approaching the performance of commercial MR devices. The mechanism of this GEMR is: the diodes help to define a high resistive state (HRS) and a low resistive state (LRS) in device by their openness and closeness, respectively. The ratio of apparent resistance between HRS and LRS is determined by geometry of silicon wafer and electrodes. Magnetic field could induce a transition from LRS to HRS by reshaping potential and current distribution among silicon wafer, resulting in a giant enhancement of intrinsic MR. We expect that this GEMR could be also realized in other semiconductors. The combination of high sensitivity to low magnetic fields and large high-field response should make this device concept attractive to the magnetic field sensing industry. Moreover, because this MR device is based on a conventional silicon/semiconductor platform, it should be possible to integrate this MR device with existing silicon/semiconductor devices and so aid the development of silicon/semiconductor-based magnetoelectronics. Also combining MR devices and semiconducting devices in a single Si/semiconductor chip may lead to some novel devices with hybrid function, such as electric-magnetic-photonic properties. Our work demonstrates that the charge property of semiconductor can be used in the magnetic sensing industry, where the spin properties of magnetic materials play a role traditionally.

  4. Extraordinary magnetoresistance in two and three dimensions: Geometrical optimization

    NASA Astrophysics Data System (ADS)

    Pugsley, Lisa M.; Ram-Mohan, L. R.; Solin, S. A.

    2013-02-01

    The extraordinary magnetoresistance (EMR) in metal-semiconductor hybrid structures was first demonstrated using a van der Pauw configuration for a circular semiconductor wafer with a concentric metallic inclusion in it. This effect depends on the orbital motion of carriers in an external magnetic field, and the remarkably high magnetoresistance response observed suggests that the geometry of the metallic inclusion can be optimized to further significantly enhance the EMR. Here, we consider the theory and simulations to achieve this goal by comparing both two-dimensional (2D) and three-dimensional (3D) structures in an external magnetic field to evaluate the EMR in them. New results for 3D structures are presented to show the feasibility of such modeling. Examples of structures that are compatible with present day technological capabilities are given together with their expected responses in terms of EMR. For a 10 μm 2D square structure with a square metallic inclusion, we find an MR up to 107 percent for an applied magnetic field of 1 T. In 3D, for a 10 μm cube with a 5 μm centered metallic inclusion, we obtain an MR of ˜104 percent, which is comparable with the 2D structure of equivalent dimensions. The results presented here for specific geometries are scalable to smaller dimensions down to the onset of ballistic effects in the transport. The present calculations open up the possibility of 3D magnetic field sensors capable of determining the magnitude and also direction of the magnetic field once a full characterization of the sensor response is performed.

  5. Modeling of Nanoparticular Magnetoresistive Systems and the Impact on Molecular Recognition

    PubMed Central

    Teich, Lisa; Kappe, Daniel; Rempel, Thomas; Meyer, Judith; Schröder, Christian; Hütten, Andreas

    2015-01-01

    The formation of magnetic bead or nanoparticle superstructures due to magnetic dipole dipole interactions can be used as configurable matter in order to realize low-cost magnetoresistive sensors with very high GMR-effect amplitudes. Experimentally, this can be realized by immersing magnetic beads or nanoparticles in conductive liquid gels and rearranging them by applying suitable external magnetic fields. After gelatinization of the gel matrix the bead or nanoparticle positions are fixed and the resulting system can be used as a magnetoresistive sensor. In order to optimize such sensor structures we have developed a simulation tool chain that allows us not only to study the structuring process in the liquid state but also to rigorously calculate the magnetoresistive characteristic curves for arbitrary nanoparticle arrangements. As an application, we discuss the role of magnetoresistive sensors in finding answers to molecular recognition. PMID:25903554

  6. Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires

    PubMed Central

    Sapkota, Keshab R.; Chen, Weimin; Maloney, F. Scott; Poudyal, Uma; Wang, Wenyong

    2016-01-01

    We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the magnetoresistance also increased and reached a maximum value. However, further increasing the carrier concentration caused the MR to decrease, and eventually an MR sign reversal from positive to negative was observed. An MR change from a maximum positive value of 25% to a minimum negative value of 7% was observed at 5 K and 50 KOe. The observed MR behavior was modeled by considering combined effects of quantum correction to carrier conductivity and bound magnetic polarons. This work could provide important insights into the mechanisms that govern magnetotransport in dilute magnetic oxides, and it also demonstrated an effective approach to manipulating magnetoresistance in these materials that have important spintronic applications. PMID:27739442

  7. Oliver E. Buckley Prize Talk: Birth of tunnel magnetoresistance and its development

    NASA Astrophysics Data System (ADS)

    Miyazaki, Terunobu

    2009-03-01

    Nowadays usually we use the word, tunnel magnetoresistance, but it required a long time to combine both words tunnel and magnetoresistance. The study of tunnel junction may originate p-n junction studied first around 1950. On the other hand, magnetoresistance effect was reported first in 1857 which was about 100 years earlier than the start of tunnel junction study. The research of tunnel magnetoresoistance has been mainly developed first for Al-oxide tunnel barrier junctions and made a big progress by the appearance of MgO barrier junctions for both basic research and applications. More recently Heusler electrode tunnel junctions exhibits a large TMR ratio up to about 750 %. In my talk I will explain first the history of the study of tunnel junction and magnetoresistance effect. Then, I will focus on the Heusler electrode junctions and also application of tunnel magnetoresoistance junctions.

  8. Magnetoresistance effect in (La, Sr)MnO3 bicrystalline films.

    PubMed

    Alejandro, G; Steren, L B; Pastoriza, H; Vega, D; Granada, M; Sánchez, J C Rojas; Sirena, M; Alascio, B

    2010-09-01

    The angular dependence of the magnetoresistance effect has been measured on bicrystalline La(0.75)Sr(0.25)MnO(3) films. The measurements have been performed on an electronically lithographed Wheatstone bridge. The study of the angular dependence of both the magnetoresistance and the resistance of single-crystalline and grain-boundary regions of the samples allowed us to isolate two contributions of low-field magnetoresistance in manganites. One of them is associated with the spin-orbit effect, i.e. the anisotropic magnetoresistance of ferromagnetic compounds, and the other one is related to spin-disorder regions at the grain boundary. Complementary x-ray diffraction, ferromagnetic resonance and low temperature magnetization experiments contribute to the characterization of the magnetic anisotropy of the samples and the general comprehension of the problem.

  9. A simple formulation for magnetoresistance in metal-insulator granular films with increased current

    NASA Astrophysics Data System (ADS)

    Boff, M. A. S.; Canto, B.; Baibich, M. N.; Pereira, L. G.

    2013-02-01

    We studied the tunnel magnetoresistance in metal/insulator granular films when the applied current is varied. The tunnel magnetoresistance shows a strong modification related to a non-Ohmic behaviour of theses materials. It was verified that spin-dependent tunnelling is the main mechanism for magnetoresistance at low applied current. However, when the current is high, another mechanism gets to be important: it is independent of the magnetization and is associated to variable range hopping between metallic grains. In this work, we propose a simple modification of Inoue and Maekawa's model for tunnelling magnetoresistance in granulars, rewriting the expression for resistance as a function of magnetic field and temperature, also taking into account the two different contributions.

  10. Magnetoresistance effect in (La, Sr)MnO3 bicrystalline films.

    PubMed

    Alejandro, G; Steren, L B; Pastoriza, H; Vega, D; Granada, M; Sánchez, J C Rojas; Sirena, M; Alascio, B

    2010-09-01

    The angular dependence of the magnetoresistance effect has been measured on bicrystalline La(0.75)Sr(0.25)MnO(3) films. The measurements have been performed on an electronically lithographed Wheatstone bridge. The study of the angular dependence of both the magnetoresistance and the resistance of single-crystalline and grain-boundary regions of the samples allowed us to isolate two contributions of low-field magnetoresistance in manganites. One of them is associated with the spin-orbit effect, i.e. the anisotropic magnetoresistance of ferromagnetic compounds, and the other one is related to spin-disorder regions at the grain boundary. Complementary x-ray diffraction, ferromagnetic resonance and low temperature magnetization experiments contribute to the characterization of the magnetic anisotropy of the samples and the general comprehension of the problem. PMID:21403272

  11. The tunneling magnetoresistance current dependence on cross sectional area, angle and temperature

    SciTech Connect

    Zhang, Z. H. Bai, Lihui; Hu, C.-M.; Hemour, S.; Wu, K.; Fan, X. L.; Xue, D. S.; Houssameddine, D.

    2015-03-15

    The magnetoresistance of a MgO-based magnetic tunnel junction (MTJ) was studied experimentally. The magnetoresistance as a function of current was measured systematically on MTJs for various MgO cross sectional areas and at various temperatures from 7.5 to 290.1 K. The resistance current dependence of the MTJ was also measured for different angles between the two ferromagnetic layers. By considering particle and angular momentum conservation of transport electrons, the current dependence of magnetoresistance can be explained by the changing of spin polarization in the free magnetic layer of the MTJ. The changing of spin polarization is related to the magnetoresistance, its angular dependence and the threshold current where TMR ratio equals zero. A phenomenological model is used which avoid the complicated barrier details and also describes the data.

  12. Hanle Magnetoresistance in Thin Metal Films with Strong Spin-Orbit Coupling.

    PubMed

    Vélez, Saül; Golovach, Vitaly N; Bedoya-Pinto, Amilcar; Isasa, Miren; Sagasta, Edurne; Abadia, Mikel; Rogero, Celia; Hueso, Luis E; Bergeret, F Sebastian; Casanova, Fèlix

    2016-01-01

    We report measurements of a new type of magnetoresistance in Pt and Ta thin films. The spin accumulation created at the surfaces of the film by the spin Hall effect decreases in a magnetic field because of the Hanle effect, resulting in an increase of the electrical resistance as predicted by Dyakonov [Phys. Rev. Lett. 99, 126601 (2007)]. The angular dependence of this magnetoresistance resembles the recently discovered spin Hall magnetoresistance in Pt/Y(3)Fe(5)O(12) bilayers, although the presence of a ferromagnetic insulator is not required. We show that this Hanle magnetoresistance is an alternative simple way to quantitatively study the coupling between charge and spin currents in metals with strong spin-orbit coupling. PMID:26799036

  13. GMR sensors: magnetoresistive behaviour optimization for biological detection by means of superparamagnetic nanoparticles.

    PubMed

    Manteca, A; Mujika, M; Arana, S

    2011-04-15

    An immunomagnetic method for the selective and quantitative detection of biological species by means of a magnetoresistive biosensor and superparamagnetic particles has been optimized. In order to achieve this, a giant magnetoresistive [Co (5.10nm)/Cu (2.47 nm)](20) multilayer structure has been chosen as the sensitive material, showing a magnetoresistance of 3.60% at 215 Oe and a sensitivity up to 0.19 Ω/Oe between 145 Oe and 350 Oe. The outward gold surface of the sensor is biofunctionalized with a Self-Assembled Monolayer (SAM). In addition, three different types of magnetic labels have been tested. 2 μm diameter magnetic carriers (7.68 pg ferrite/particle) have shown the best response and they have induced a shift in the magnetoresistive hysteresis loops up to 9% at 175 Oe. PMID:21382706

  14. Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Sapkota, Keshab R.; Chen, Weimin; Maloney, F. Scott; Poudyal, Uma; Wang, Wenyong

    2016-10-01

    We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the magnetoresistance also increased and reached a maximum value. However, further increasing the carrier concentration caused the MR to decrease, and eventually an MR sign reversal from positive to negative was observed. An MR change from a maximum positive value of 25% to a minimum negative value of 7% was observed at 5 K and 50 KOe. The observed MR behavior was modeled by considering combined effects of quantum correction to carrier conductivity and bound magnetic polarons. This work could provide important insights into the mechanisms that govern magnetotransport in dilute magnetic oxides, and it also demonstrated an effective approach to manipulating magnetoresistance in these materials that have important spintronic applications.

  15. Electric field control of magnetoresistance in InP nanowires with ferromagnetic contacts.

    PubMed

    Zwanenburg, F A; van der Mast, D W; Heersche, H B; Kouwenhoven, L P; Bakkers, E P A M

    2009-07-01

    We demonstrate electric field control of sign and magnitude of the magnetoresistance in InP nanowires with ferromagnetic contacts. The sign change in the magnetoresistance is directly correlated with a sign change in the transconductance. Additionally, the magnetoresistance is shown to persist at such a high bias that Coulomb blockade has been lifted. We also observe the magnetoresistance when one of the ferromagnets is replaced by a nonmagnetic metal. We conclude that it must be induced by a single ferromagnetic contact, and that spin transport can be ruled out as the origin. Our results emphasize the importance of a systematic investigation of spin-valve devices in order to discriminate between ambiguous interpretations. PMID:19537736

  16. Monte Carlo simulation of multilayer magnetic structures and calculation of the magnetoresistance coefficient

    NASA Astrophysics Data System (ADS)

    Prudnikov, V. V.; Prudnikov, P. V.; Romanovskii, D. E.

    2015-11-01

    The Monte Carlo study of three-layer and spin-valve magnetic structures with giant magnetoresistance effects has been performed with the application of the Heisenberg anisotropic model to the description of the magnetic properties of thin ferromagnetic films. The dependences of the magnetic characteristics on the temperature and external magnetic field have been obtained for the ferromagnetic and antiferromagnetic configurations of these structures. A Monte Carlo method for determining the magnetoresistance coefficient has been developed. The magnetoresistance coefficient has been calculated for three-layer and spin-valve magnetic structures at various thicknesses of ferromagnetic films. It has been shown that the calculated temperature dependence of the magnetoresistance coefficient is in good agreement with experimental data obtained for the Fe(001)/Cr(001) multilayer structure and the CFAS/Ag/CFAS/IrMn spin valve based on the Co2FeAl0.5Si0.5 (CFAS) Heusler alloy.

  17. Effective switching frequency multiplier inverter

    DOEpatents

    Su, Gui-Jia; Peng, Fang Z.

    2007-08-07

    A switching frequency multiplier inverter for low inductance machines that uses parallel connection of switches and each switch is independently controlled according to a pulse width modulation scheme. The effective switching frequency is multiplied by the number of switches connected in parallel while each individual switch operates within its limit of switching frequency. This technique can also be used for other power converters such as DC/DC, AC/DC converters.

  18. Electric field modulation of tunneling anisotropic magnetoresistance in tunnel junctions with antiferromagnetic electrodes

    NASA Astrophysics Data System (ADS)

    Goto, Minori; Nawaoka, Kohei; Miwa, Shinji; Hatanaka, Shohei; Mizuochi, Norikazu; Suzuki, Yoshishige

    2016-08-01

    We present electric field modulation of tunneling anisotropic magnetoresistance (TAMR) in MnIr|MgO|Ta tunnel junctions. TAMR enables direct observation of the antiferromagnetic spin direction at the MnIr|MgO interface. We found that the shape of magnetoresistance (MR) curve can be modulated by an electric field, which can be explained by electric field modulation of the interfacial magnetic anisotropy at MnIr|MgO.

  19. AC magnetohydrodynamic microfluidic switch

    SciTech Connect

    Lemoff, A V; Lee, A P

    2000-03-02

    A microfluidic switch has been demonstrated using an AC Magnetohydrodynamic (MHD) pumping mechanism in which the Lorentz force is used to pump an electrolytic solution. By integrating two AC MHD pumps into different arms of a Y-shaped fluidic circuit, flow can be switched between the two arms. This type of switch can be used to produce complex fluidic routing, which may have multiple applications in {micro}TAS.

  20. Thermally actuated thermionic switch

    DOEpatents

    Barrus, D.M.; Shires, C.D.

    1982-09-30

    A thermally actuated thermionic switch which responds to an increase of temperature by changing from a high impedance to a low impedance at a predictable temperature set point. The switch has a bistable operation mode switching only on temperature increases. The thermionic material may be a metal which is liquid at the desired operation temperature and held in matrix in a graphite block reservoir, and which changes state (ionizes, for example) so as to be electrically conductive at a desired temperature.

  1. Thermally actuated thermionic switch

    DOEpatents

    Barrus, Donald M.; Shires, Charles D.

    1988-01-01

    A thermally actuated thermionic switch which responds to an increase of temperature by changing from a high impedance to a low impedance at a predictable temperature set point. The switch has a bistable operation mode switching only on temperature increases. The thermionic material may be a metal which is liquid at the desired operation temperature and held in matrix in a graphite block reservoir, and which changes state (ionizes, for example) so as to be electrically conductive at a desired temperature.

  2. Solid state switch

    DOEpatents

    Merritt, Bernard T.; Dreifuerst, Gary R.

    1994-01-01

    A solid state switch, with reverse conducting thyristors, is designed to operate at 20 kV hold-off voltage, 1500 A peak, 1.0 .mu.s pulsewidth, and 4500 pps, to replace thyratrons. The solid state switch is more reliable, more economical, and more easily repaired. The switch includes a stack of circuit card assemblies, a magnetic assist and a trigger chassis. Each circuit card assembly contains a reverse conducting thyristor, a resistor capacitor network, and triggering circuitry.

  3. Alarm toe switch

    DOEpatents

    Ganyard, Floyd P.

    1982-01-01

    An alarm toe switch inserted within a shoe for energizing an alarm circuit n a covert manner includes an insole mounting pad into which a miniature reed switch is fixedly molded. An elongated slot perpendicular to the reed switch is formed in the bottom surface of the mounting pad. A permanent cylindrical magnet positioned in the forward portion of the slot with a diameter greater than the pad thickness causes a bump above the pad. A foam rubber block is also positioned in the slot rearwardly of the magnet and holds the magnet in normal inoperative relation. A non-magnetic support plate covers the slot and holds the magnet and foam rubber in the slot. The plate minimizes bending and frictional forces to improve movement of the magnet for reliable switch activation. The bump occupies the knuckle space beneath the big toe. When the big toe is scrunched rearwardly the magnet is moved within the slot relative to the reed switch, thus magnetically activating the switch. When toe pressure is released the foam rubber block forces the magnet back into normal inoperative position to deactivate the reed switch. The reed switch is hermetically sealed with the magnet acting through the wall so the switch assembly S is capable of reliable operation even in wet and corrosive environments.

  4. Large magnetoresistance induced by crystallographic defects in FexTaS2 single crystals

    NASA Astrophysics Data System (ADS)

    Chen, Chih-Wei; Morosan, Emilia; Morosan's Group Team

    The search for the materials that show large magnetoresistance and the mechanisms that induce it remains challenging in both experimental and theoretical aspects. The giant magnetoresistance in one class of materials, ferromagnetic conductors, is generally attributed to the misalignments of magnetic moments, which cause spin disorder scattering. Recently, very large magnetoresistance (>60 %) was discovered in the ferromagnetic Fe-intercalated transition metal dichalcogenide, Fe0.28TaS2 [Phys. Rev. B 91, 054426(2015)]. The mechanism that led to this large magnetoresistance was suggested to be due to the deviation of Fe concentration from commensurate values (1/4 or 1/3), which caused magnetic moments' misalignments. Here we report a study of FexTaS2 crystals with x close to the commensurate values. Our results qualitatively demonstrate that crystallographic defects significantly affect magnetoresistance in FexTaS2. This provides a way to search for large magnetoresistance in more intercalated transition metal dichalcogenides. This work is supported by the Department of Defense PECASE.

  5. Quantum and classical contributions to linear magnetoresistance in topological insulator thin films

    NASA Astrophysics Data System (ADS)

    Singh, Sourabh; Gopal, R. K.; Sarkar, Jit; Mitra, Chiranjib

    2016-05-01

    Three dimensional topological insulators possess backscattering immune relativistic Dirac fermions on their surface due to nontrivial topology of the bulk band structure. Both metallic and bulk insulating topological insulators exhibit weak-antilocalization in the low magnetic field and linear like magnetoresistance in higher fields. We explore the linear magnetoresistance in bulk insulating topological insulator Bi2-xSbxTe3-ySey thin films grown by pulsed laser deposition technique. Thin films of Bi2-xSbxTe3-ySey were found to be insulating in nature, which conclusively establishes the origin of linear magnetoresistance from surface Dirac states. The films were thoroughly characterized for their crystallinity and composition and then subjected to transport measurements. We present a careful analysis taking into considerations all the existing models of linear magnetoresistance. We comprehend that the competition between classical and quantum contributions to magnetoresistance results in linear magnetoresistance in high fields. We observe that the cross-over field decreases with increasing temperature and the physical argument for this behavior is explained.

  6. In Situ Tuning of Magnetization and Magnetoresistance in Fe3O4 Thin Film Achieved with All-Solid-State Redox Device.

    PubMed

    Tsuchiya, Takashi; Terabe, Kazuya; Ochi, Masanori; Higuchi, Tohru; Osada, Minoru; Yamashita, Yoshiyuki; Ueda, Shigenori; Aono, Masakazu

    2016-01-26

    An all-solid-state redox device composed of Fe3O4 thin film and Li(+) ion conducting solid electrolyte was fabricated for use in tuning magnetization and magnetoresistance (MR), which are key factors in the creation of high-density magnetic storage devices. Electrical conductivity, magnetization, and MR were reversibly tuned by Li(+) insertion and removal. Tuning of the various Fe3O4 thin film properties was achieved by donation of an electron to the Fe(3+) ions. This technique should lead to the development of spintronics devices based on the reversible switching of magnetization and spin polarization (P). It should also improve the performance of conventional magnetic random access memory (MRAM) devices in which the ON/OFF ratio has been limited to a small value due to a decrease in P near the tunnel barrier.

  7. Magnetostatic effects on switching in small magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Bapna, Mukund; Piotrowski, Stephan K.; Oberdick, Samuel D.; Li, Mingen; Chien, C.-L.; Majetich, Sara A.

    2016-01-01

    Perpendicular CoFeB/MgO/CoFeB magnetic tunnel junctions with diameters under 100 nm are investigated by conductive atomic force microscopy. Minor loops of the tunnel magnetoresistance as a function of applied magnetic field reveal the hysteresis of the soft layer and an offset due to the magnetostatic field of the hard layer. Within the hysteretic region, telegraph noise is observed in the tunnel current. Simulations show that in this range, the net magnetic field in the soft layer is spatially inhomogeneous, and that antiparallel to parallel switching tends to start near the edge, while parallel to antiparallel reversal favors nucleation in the interior of the soft layer. As the diameter of the tunnel junction is decreased, the average magnitude of the magnetostatic field increases, but the spatial inhomogeneity across the soft layer is reduced.

  8. Asymmetrical Switch Costs in Children

    ERIC Educational Resources Information Center

    Ellefson, Michelle R.; Shapiron, Laura R.; Chater, Nick

    2006-01-01

    Switching between tasks produces decreases in performance as compared to repeating the same task. Asymmetrical switch costs occur when switching between two tasks of unequal difficulty. This asymmetry occurs because the cost is greater when switching to the less difficult task than when switching to the more difficult task. Various theories about…

  9. Magnetoresistance in the magnetic and superconducting phases of RuSr 2GdCu 2O 8

    NASA Astrophysics Data System (ADS)

    Pimentel, J. L.; Jurelo, A. R.; Pureur, P.

    The transverse magnetoresistance of RuSr 2GdCu 2O 8 is studied as a function of the applied field in several fixed temperatures spanning the superconducting and purely magnetic phases. In low applied fields, the magnetoresistance is positive and results from suppression of superconducting fluctuations. In the high field-high temperature regimes, a spin-disorder contribution to the magnetoresistance is identified. This fact indicates that the magnetic Ru-O 2 atomic layers have a conducting character.

  10. Reversible Chemisorption Gas-Gap Thermal Switch

    NASA Technical Reports Server (NTRS)

    Jones, Jack A.; Bard, Steven; Blue, Gary

    1991-01-01

    Gas/sorbent combinations provide means to turn heat-conduction paths on and off. Single-stage gas-gap thermal switch based on reversible chemisorption of hydrogen gas by ZrNiH. Two-stage gas-gap thermal switch based on reversible desorption of O2 from MnO2 in first stage, followed by absorption in Cu on zeolite in second stage. Requires relatively low power. Used in sorption refrigeration systems designed to operate for long times without maintenance.

  11. Manually operated coded switch

    DOEpatents

    Barnette, Jon H.

    1978-01-01

    The disclosure relates to a manually operated recodable coded switch in which a code may be inserted, tried and used to actuate a lever controlling an external device. After attempting a code, the switch's code wheels must be returned to their zero positions before another try is made.

  12. Quantum cryptography without switching.

    PubMed

    Weedbrook, Christian; Lance, Andrew M; Bowen, Warwick P; Symul, Thomas; Ralph, Timothy C; Lam, Ping Koy

    2004-10-22

    We propose a new coherent state quantum key distribution protocol that eliminates the need to randomly switch between measurement bases. This protocol provides significantly higher secret key rates with increased bandwidths than previous schemes that only make single quadrature measurements. It also offers the further advantage of simplicity compared to all previous protocols which, to date, have relied on switching.

  13. Comparative study of microwave radiation-induced magnetoresistive oscillations induced by circularly- and linearly- polarized photo-excitation

    SciTech Connect

    Ye, Tianyu; Liu, Han -Chun; Wang, Zhuo; Wegscheider, W.; Mani, Ramesh G.

    2015-10-09

    A comparative study of the radiation-induced magnetoresistance oscillations in the high mobility GaAs/AlGaAs heterostructure two dimensional electron system (2DES) under linearly- and circularly- polarized microwave excitation indicates a profound difference in the response observed upon rotating the microwave launcher for the two cases, although circularly polarized microwave radiation induced magnetoresistance oscillations observed at low magnetic fields are similar to the oscillations observed with linearly polarized radiation. For the linearly polarized radiation, the magnetoresistive response is a strong sinusoidal function of the launcher rotation (or linear polarization) angle, θ. As a result, for circularly polarized radiation, the oscillatory magnetoresistive response is hardly sensitive to θ.

  14. Erected mirror optical switch

    DOEpatents

    Allen, James J.

    2005-06-07

    A microelectromechanical (MEM) optical switching apparatus is disclosed that is based on an erectable mirror which is formed on a rotatable stage using surface micromachining. An electrostatic actuator is also formed on the substrate to rotate the stage and mirror with a high angular precision. The mirror can be erected manually after fabrication of the device and used to redirect an incident light beam at an arbitrary angel and to maintain this state in the absence of any applied electrical power. A 1.times.N optical switch can be formed using a single rotatable mirror. In some embodiments of the present invention, a plurality of rotatable mirrors can be configured so that the stages and mirrors rotate in unison when driven by a single micromotor thereby forming a 2.times.2 optical switch which can be used to switch a pair of incident light beams, or as a building block to form a higher-order optical switch.

  15. Nanoscale memristive radiofrequency switches

    NASA Astrophysics Data System (ADS)

    Pi, Shuang; Ghadiri-Sadrabadi, Mohammad; Bardin, Joseph C.; Xia, Qiangfei

    2015-06-01

    Radiofrequency switches are critical components in wireless communication systems and consumer electronics. Emerging devices include switches based on microelectromechanical systems and phase-change materials. However, these devices suffer from disadvantages such as large physical dimensions and high actuation voltages. Here we propose and demonstrate a nanoscale radiofrequency switch based on a memristive device. The device can be programmed with a voltage as low as 0.4 V and has an ON/OFF conductance ratio up to 1012 with long state retention. We measure the radiofrequency performance of the switch up to 110 GHz and demonstrate low insertion loss (0.3 dB at 40 GHz), high isolation (30 dB at 40 GHz), an average cutoff frequency of 35 THz and competitive linearity and power-handling capability. Our results suggest that, in addition to their application in memory and computing, memristive devices are also a leading contender for radiofrequency switch applications.

  16. Avalanche photoconductive switching

    SciTech Connect

    Pocha, M.D.; Druce, R.L.; Wilson, M.J.; Hofer, W.W.

    1989-01-01

    This paper describes work being done at Lawrence Livermore National Laboratory on the avalanche mode of operation of laser triggered photoconductive switches. We have been able to generate pulses with amplitudes of 2 kV--35 kV and rise times of 300--500 ps, and with a switching gain (energy of output electrical pulse vs energy of trigger optical pulse) of 10{sup 3} to over 10{sup 5}. Switches with two very different physical configurations and with two different illumination wavelengths (1.06 {mu}m, 890 nm) exhibit very similar behavior. The avalanche switching behavior, therefore, appears to be related to the material parameters rather than the optical wavelength or switch geometry. Considerable further work needs to be done to fully characterize and understand this mode of operation. 3 refs., 6 figs.

  17. Detection and characterization of multi-filament evolution during resistive switching

    SciTech Connect

    Mickel, Patrick R.; Lohn, Andrew J.; Marinella, Matthew J.

    2014-08-05

    We present resistive switching data in TaOx memristors displaying signatures of multi-filament switching modes, and develop a geometrically defined equivalent circuit to separate the individual resistances and powers dissipated in each filament. Using these resolved values, we compare the individual switching curves of each filament and demonstrate that the switching data of each filament collapse onto a single switching curve determined by the analytical steady-state resistive switching solution for filamentary switching. Analyzing our results in terms of this solution, we determine the switching temperature, heat flow, conductivity, and time evolving areas of each filament during resistive switching. Finally, we discuss operational modes which may limit the formation of additional conducting filaments, potentially leading to increased device endurance.

  18. Detection and characterization of multi-filament evolution during resistive switching

    DOE PAGES

    Mickel, Patrick R.; Lohn, Andrew J.; Marinella, Matthew J.

    2014-08-05

    We present resistive switching data in TaOx memristors displaying signatures of multi-filament switching modes, and develop a geometrically defined equivalent circuit to separate the individual resistances and powers dissipated in each filament. Using these resolved values, we compare the individual switching curves of each filament and demonstrate that the switching data of each filament collapse onto a single switching curve determined by the analytical steady-state resistive switching solution for filamentary switching. Analyzing our results in terms of this solution, we determine the switching temperature, heat flow, conductivity, and time evolving areas of each filament during resistive switching. Finally, we discussmore » operational modes which may limit the formation of additional conducting filaments, potentially leading to increased device endurance.« less

  19. Optical Circuit Switched Protocol

    NASA Technical Reports Server (NTRS)

    Monacos, Steve P. (Inventor)

    2000-01-01

    The present invention is a system and method embodied in an optical circuit switched protocol for the transmission of data through a network. The optical circuit switched protocol is an all-optical circuit switched network and includes novel optical switching nodes for transmitting optical data packets within a network. Each optical switching node comprises a detector for receiving the header, header detection logic for translating the header into routing information and eliminating the header, and a controller for receiving the routing information and configuring an all optical path within the node. The all optical path located within the node is solely an optical path without having electronic storage of the data and without having optical delay of the data. Since electronic storage of the header is not necessary and the initial header is eliminated by the first detector of the first switching node. multiple identical headers are sent throughout the network so that subsequent switching nodes can receive and read the header for setting up an optical data path.

  20. Magnetoresistance in p-type cadmium telluride doped with sodium

    SciTech Connect

    Ahmad, Faisal R.

    2015-01-05

    This paper gives an account of the observations that were made during experiments in which temperature dependent van der Pauw (vdP) measurements were conducted on sodium doped single crystalline CdTe. With the aid of the vdP technique, the resistivity of the sample was measured in the presence of an external transverse magnetic field. The measurements were conducted at temperatures that ranged from 24 K all the way up to 300 K. The measurements indicated that at low temperatures, the resistivity of the sample increased significantly as the magnitude of the magnetic field perpendicular to the sample was raised from 0 T to 1.5 T. It was observed that the magnetoresistance (MR) decreased with increasing temperature. At 24 K, for an applied field of 1.5 T, the maximum MR was over 30%. Furthermore, it was also observed that the MR below 75 K exhibited a more or less linear dependence on the magnetic field. At higher temperatures, the MR as a function of the applied magnetic field exhibited a quadratic dependence. The results seem to indicate that the linear MR is most likely due to inhomogeneity in the semiconductor.

  1. Large Magnetoresistance in Single-Radical Molecular Junctions.

    PubMed

    Hayakawa, Ryoma; Karimi, Mohammad Amin; Wolf, Jannic; Huhn, Thomas; Zöllner, Martin Sebastian; Herrmann, Carmen; Scheer, Elke

    2016-08-10

    Organic radicals are promising building blocks for molecular spintronics. Little is known about the role of unpaired electrons for electron transport at the single-molecule level. Here, we examine the impact of magnetic fields on electron transport in single oligo(p-phenyleneethynylene) (OPE)-based radical molecular junctions, which are formed with a mechanically controllable break-junction technique at a low temperature of 4.2 K. Surprisingly huge positive magnetoresistances (MRs) of 16 to 287% are visible for a magnetic field of 4 T, and the values are at least 1 order of magnitude larger than those of the analogous pristine OPE (2-4%). Rigorous analysis of the MR and of current-voltage and inelastic electron-tunneling spectroscopy measurements reveal an effective reduction of the electronic coupling between the current-carrying molecular orbital and the electrodes with increasing magnetic field. We suggest that the large MR for the single-radical molecular junctions might be ascribed to a loss of phase coherence of the charge carriers induced by the magnetic field. Although further investigations are required to reveal the mechanism underlying the strong MR, our findings provide a potential approach for tuning charge transport in metal-molecule junctions with organic radicals. PMID:27458666

  2. Magnetoresistance Phenomena in a Variety of Amorphous Semiconductors and Insulators

    NASA Astrophysics Data System (ADS)

    Mutch, Michael; Westley, David; Lenahan, Patrick; Semiconductor Spectroscopy Lab at Penn State University Team

    We report on near zero-field magnetoresistance (MR) phenomena in a variety of amorphous semiconductors and insulators. We utilize electrically detected magnetic resonance (EDMR) measurements at multiple fields and frequencies to complement MR measurements. EDMR, the electrically detected analog of electron paramagnetic resonance (EPR), provides both information about the chemical nature and energy levels of point defects involved. Semiconductors in this study include a-BC:H, a-C:H, diamond-like carbon (DLC), and a-Si:H. Insulators include a-SiN:H, a-SiOC:H, a-SiCN:H. In hydrogenated amorphous systems, near featureless EPR and EDMR spectra are often difficult to analyze. We utilize multiple field and frequency EDMR results including ultra-low field/frequency (ν = 85 MHz, B = 3 mT) EDMR measurements to provide insight into defect chemistry in these systems. We have also made EDMR and MR conditions over a wide range of metal/semiconductor heterojunction and metal/insulator/semiconductor biasing conditions. By comparing variable bias measurements with band diagrams, we gain an elementary understanding of defect energy levels. We believe our results will be of significant importance for understanding defect mediated spin-dependent transport in these systems. The authors would like to thanks Dr. Sean King of Intel Corporation for the provision of samples.

  3. Magnetoresistive-superconducting mixed sensors for biomagnetic applications

    NASA Astrophysics Data System (ADS)

    Pannetier-Lecoeur, M.; Fermon, C.; Dyvorne, H.; Jacquinot, J. F.; Polovy, H.; Walliang, A. L.

    2010-05-01

    When coupled to a giant magnetoresistive (GMR) sensor, a superconducting loop containing a constriction can be a very sensitive magnetometer. It has thermal noise levels of few fT/sqrt(Hz), comparable to low- Tc SQUID noise, with a flat frequency response. These mixed sensors are good candidates for detection of weak biomagnetic signals, like a cardiac or neuronal signature. Furthermore, being sensitive to the flux, mixed sensors can be used for nuclear magnetic resonance (NMR) detection and Magnetic Resonance Imaging (MRI) especially at low fields. They are very robust and accept strong RF pulses with a very short recovery time compared to tuned RF coils, which allow measurements of broad signals (short relaxation time or multiple resonances). We will first present the last generation sensors having a noise level of 3 fT/sqrt(Hz) and we will show signals measured at low frequency (magnetocardiography-magnetoencephalography range) and at higher frequency (NMR signals). The use of additional flux transformers for improving the signal-to-noise will be discussed. Finally, we will present perspectives for low-field MRI, which can be combined with neural signal detection (MEG), especially for brain anatomy and temporal response on the same experimental setup.

  4. Tunnel magnetoresistance in Self-Assembled Monolayers Based Tunnel Junctions

    NASA Astrophysics Data System (ADS)

    Mattana, Richard; Barraud, Clément; Tatay, Sergio; Galbiati, Marta; Seneor, Pierre; Bouzehouane, Karim; Jacquet, Eric; Deranlot, Cyrile; Fert, Albert; Petroff, Frédéric

    2012-02-01

    Organic/molecular spintronics is a rising research field at the frontier between spintronics and organic chemistry. Organic molecule and semiconductors were first seen as promising for spintronics devices due to their expected long spin lifetime. But an exciting challenge has also been to find opportunities arising from chemistry to develop new spintronics functionalities. It was shown that the molecular structure and the ferromagnetic metal/molecule hybridization can strongly influence interfacial spin properties going from spin polarization enhancement to its sign control in spintronics devices. In this scenario, while scarcely studied, self-assembled monolayers (SAMs) are expected to become perfect toy barriers to further test these tailoring properties in molecular magnetic tunnel junctions (MTJs). Due to its very high spin polarization and air stability LSMO has positioned itself as the electrode of choice in most of the organic spintronics devices. We will present a missing building block for molecular spintronics tailoring: the grafting and film characterization of organic monofunctionalized long alkane chains over LSMO. We have obtained 35% of magnetoresistance in LSMO/SAMs/Co MTJs. We will discuss the unusual behaviour of the bias voltage dependence of the TMR.

  5. Theoretical Study on Twofold and Fourfold Symmetric Anisotropic Magnetoresistance Effect

    NASA Astrophysics Data System (ADS)

    Kokado, Satoshi; Tsunoda, Masakiyo

    We theoretically study the twofold and fourfold symmetric anisotropic magnetoresistance (AMR) effect [ 1 ] . We first extend our previous model [ 2 ] to a model including the crystal field effect [ 1 ] . Using the model, we next obtain an analytical expression of the AMR ratio, i.e., AMR (ϕ) =C0 +C2 cos (2 ϕ) +C4 cos (4 ϕ) , with C0=C2 -C4 [ 1 ] . Here, ϕ is the relative angle between the magnetization direction and the electric current direction and C2 (C4) is a coefficient of the twofold (fourfold) symmetric term. The coefficients C2 and C4 are expressed by a spin-orbit coupling constant, an exchange field, a crystal field, and s-s and s-d scattering resistivities. Using this expression, we analyze the experimental results for Fe4N [ 3 ] , in which | C2 | and | C4 | increase with decreasing temperature. The experimental results can be reproduced by assuming that the tetragonal distortion increases with decreasing temperature. [ 1 ] S. Kokado et al., J. Phys. Soc. Jpn. 84 (2015) 094710. [ 2 ] S. Kokado et al., J. Phys. Soc. Jpn. 81 (2012) 024705. [ 3 ] M. Tsunoda et al., Appl. Phys. Express 3 (2010) 113003.

  6. The spin-Dicke effect in OLED magnetoresistance

    NASA Astrophysics Data System (ADS)

    Waters, D. P.; Joshi, G.; Kavand, M.; Limes, M. E.; Malissa, H.; Burn, P. L.; Lupton, J. M.; Boehme, C.

    2015-11-01

    Pairs of charge-carrier spins in organic semiconductors constitute four-level systems that can be driven electromagnetically. Given appropriate conditions for ultrastrong coupling--weak local hyperfine fields Bhyp, large magnetic resonant driving fields B1 and low static fields B0 that define Zeeman splitting--the spin-Dicke effect, a collective transition of spin states, has been predicted. This parameter range is challenging to probe by electron paramagnetic resonance spectroscopy because thermal magnetic polarization is negligible. It is accessed through spin-dependent conductivity that is controlled by electron-hole pairs of singlet and triplet spin-permutation symmetry without the need of thermal spin polarization. Signatures of collective behaviour of carrier spins are revealed in the steady-state magnetoresistance of organic light-emitting diodes (OLEDs), rather than through radiative transitions. For intermediate B1, the a.c.-Zeeman effect appears. For large B1, a collective spin-ensemble state arises, inverting the current change under resonance and removing power broadening, thereby offering a unique window to ambient macroscopic quantum coherence.

  7. Viable chemical approach for patterning nanoscale magnetoresistive random access memory

    SciTech Connect

    Kim, Taeseung; Kim, Younghee; Chen, Jack Kun-Chieh; Chang, Jane P.

    2015-03-15

    A reactive ion etching process with alternating Cl{sub 2} and H{sub 2} exposures has been shown to chemically etch CoFe film that is an integral component in magnetoresistive random access memory (MRAM). Starting with systematic thermodynamic calculations assessing various chemistries and reaction pathways leading to the highest possible vapor pressure of the etch products reactions, the potential chemical combinations were verified by etch rate investigation and surface chemistry analysis in plasma treated CoFe films. An ∼20% enhancement in etch rate was observed with the alternating use of Cl{sub 2} and H{sub 2} plasmas, in comparison with the use of only Cl{sub 2} plasma. This chemical combination was effective in removing metal chloride layers, thus maintaining the desired magnetic properties of the CoFe films. Scanning electron microscopy equipped with energy-dispersive x-ray spectroscopy showed visually and spectroscopically that the metal chloride layers generated by Cl{sub 2} plasma were eliminated with H{sub 2} plasma to yield a clean etch profile. This work suggests that the selected chemistries can be used to etch magnetic metal alloys with a smooth etch profile and this general strategy can be applied to design chemically based etch processes to enable the fabrication of highly integrated nanoscale MRAM devices.

  8. Gilbert damping and anisotropic magnetoresistance in iron-based alloys

    NASA Astrophysics Data System (ADS)

    Berger, L.

    2016-07-01

    We use the two-current model of Campbell and Fert to understand the compositional dependence of the Gilbert damping parameter in certain iron alloys. In that model, spin-up and spin-down carriers have different resistivities ρ↑ and ρ↓. We emphasize the part of the Gilbert parameter, called Gsf, generated by spin-flip interband processes. Both Gsf and the anisotropic magnetoresistance Δρ are proportional to the square of the spin-orbit parameter, and also proportional to ρ↑. In bcc alloys of iron with V, Cr, Mo, etc. solutes on the left of iron in the periodic table, ρ↑ is increased by a scattering resonance (Gomes and Campbell, 1966, 1968). Then ρ↑, Δρ, and Gsf all exhibit a peak at the same moderate concentration of the solute. We find the best fit between this theory and existing experimental data of Gilbert damping for Fe-V epitaxial films at room temperature (Cheng, 2006; Scheck et al., 2007). At room temperature, the predicted Gsf peak is masked by a background arising from non-flip intraband processes. At elevated temperatures, the peak is expected to become more prominent, and less hidden in the background.

  9. Shield-related signal instability in magnetoresistive heads

    NASA Astrophysics Data System (ADS)

    Nakamoto, K.; Narumi, S.; Kawabe, T.; Kobayashi, T.; Fukui, H.

    1999-04-01

    Magnetoresistive (MR) heads with various upper shield materials were fabricated and their read-write performance was tested to clarify the shield-related effect on the signal instability in MR heads. Comparison of a head with an upper shield layer of higher magnetostriction and one with lower magnetostriction showed that the latter had better stability in the output signal of a repeated read-write test. The output amplitude of a head with an upper shield layer of Co52Ni27Fe21 film, which had a high magnetostriction of about +3×10-6, was varied by applying a low external longitudinal field, which affected just the shield layers. This change in the output corresponded well to the output variation in the repeated read-write test. The spin scanning electron micrograph image of this head revealed a distinct domain wall in the air bearing surface near the MR sensor. These results indicated that instability of the domain structure in a shield layer was one of the causes of the signal instability in MR heads; an unusual bias field from a domain wall of the shield layer, which could be moved easily by a repeated writing operation, caused a variation in the biased state of the MR layer which resulted in the signal variation, and that low magnetostriction was required for a shield material to achieve a stable head.

  10. Unexploded ordnance detection using imaging giant magnetoresistive (GMR) sensor arrays

    SciTech Connect

    Chaiken, A., LLNL

    1997-05-06

    False positive detections account for a great part of the expense associated with unexploded ordnance (UXO) remediation. Presently fielded systems like pulsed electromagnetic induction systems and cesium-vapor magnetometers are able to distinguish between UXO and other metallic ground clutter only with difficulty. The discovery of giant magnetoresistance (GMR) has led to the development of a new generation of integrated-circuit magnetic sensors that are far more sensitive than previously available room-temperature-operation electronic devices. The small size of GMR sensors makes possible the construction of array detectors that can be used to image the flux emanating from a ferrous object or from a non-ferrous object with eddy currents imposed by an external coil. The purpose of a GMR-based imaging detector would be to allow the operator to easily distinguish between UXO and benign objects (like shrapnel or spent bullets) that litter formerly used defense sites (FUDS). In order to demonstrate the potential of a GMR-based imaging technology, a crude magnetic imaging system has been constructed using commercially available sensors. The ability to roughly determine the outline and disposition of magnetic objects has been demonstrated. Improvements to the system which are necessary to make it into a high-performance UXO detector are outlined.

  11. Alkanethiol capping-induced changes in the magnetoresistance of Co

    NASA Astrophysics Data System (ADS)

    Knaus, Brad; Garzon, Samir; Crawford, Thomas M.

    2008-03-01

    We demonstrate that chemisorption of a ˜ 1 nm thick dodecanethiol (C12H25SH) self-assembled monolayer on the surface of an Au film alters the magnetotransport of an underlying Co film. Giant paramagnetism has been previously detected in Au thin films and nanoparticles capped with alkanethiols via SQUID magnetometry. By observing the impact of Au-thiol magnetism on a ferromagnetic thin film we avoid background subtraction and the influence of impurities. After thiolation, significant changes are observed in the anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) from Co/Au bilayers (30 nm/5-60 nm) patterned into 1 x 5 mm^2 bars. Driven with nearly perpendicular external fields, we observed domain nucleation shifts of ˜0.65 T and changes in the FWHM of the AMR. We have also measured differences in the MR as a function of ambient exposure time presumably due to oxidation effects known to occur in alkanethiols. Effects of surface scattering were eliminated with the introduction of a 12nm Al2O3 insulation barrier between Co and Au. We have calculated that the effects of magnetostriction are too small by more than two orders of magnitude to explain our observations. We therefore hypothesize that Au-thiol magnetization acts as a source of magnetic field which biases the underlying Co film.

  12. Quantum Fluctuations of Local Magnetoresistance in Organic Spin Valves

    NASA Astrophysics Data System (ADS)

    Raikh, Mikhail; Roundy, Robert; Nemirovsky, Demitry; Kagalovsky, Victor

    2014-03-01

    Aside from interfacial effects, the performance of organic spin valves is limited by the spin memory loss in course of electron transport between the magnetized electrodes. One of the most prominent mechanisms of this loss is the spin precession in the random hyperfine fields of nuclei. We assume that the electron transport is due to incoherent multi-step tunneling. Then the precession takes place while electron ``waits'' for the subsequent tunneling step. While the spatial coherence of electron is lost after a single step, the spin evolution remains absolutely coherent all the way between the electrodes. As a result, the amplitudes of subsequent spin rotation interfere with each other. We demonstrate that this interference leads to a wide spread in the local values of tunnel magnetoresistance (TMR). Moreover, if on average the TMR is positive, the portion of the surface area where the TMR is negative is appreciable. We calculate analytically and numerically the distribution of local TMR as a function of the spin-valve thickness. Supported by the NSF through MRSEC DMR-112125 and by the US-Israel Binational Science Foundation

  13. Temperature‑field phase diagram of extreme magnetoresistance

    NASA Astrophysics Data System (ADS)

    Fallah Tafti, Fazel; Gibson, Quinn; Kushwaha, Satya; Krizan, Jason W.; Haldolaarachchige, Neel; Cava, Robert Joseph

    2016-06-01

    The recent discovery of extreme magnetoresistance (XMR) in LaSb introduced lanthanum monopnictides as a new platform to study this effect in the absence of broken inversion symmetry or protected linear band crossing. In this work, we report XMR in LaBi. Through a comparative study of magnetotransport effects in LaBi and LaSb, we construct a temperature‑field phase diagram with triangular shape that illustrates how a magnetic field tunes the electronic behavior in these materials. We show that the triangular phase diagram can be generalized to other topological semimetals with different crystal structures and different chemical compositions. By comparing our experimental results to band structure calculations, we suggest that XMR in LaBi and LaSb originates from a combination of compensated electron‑hole pockets and a particular orbital texture on the electron pocket. Such orbital texture is likely to be a generic feature of various topological semimetals, giving rise to their small residual resistivity at zero field and subject to strong scattering induced by a magnetic field.

  14. Crystallinity and magnetoresistance in calcium doped lanthanum manganites

    SciTech Connect

    Gillman, E.S.; Dahmen, K.H.

    1998-12-31

    Thin films of calcium doped lanthanum manganites La{sub 1{minus}x}Ca{sub x}MnO{sub 3} (LCMO) with x {approximately} 0.41 have been prepared on LaAlO{sub 3}(001) (LAO) Y-stabilized ZrO{sub 2}(001) (YSZ), and Al{sub 2}O{sub 3}(0001) (SAP) substrates by liquid delivery metal-organic chemical vapor deposition (LD-MOCVD). The films on YSZ and SAP substrates have a textured, polycrystalline morphology with a preferred orientation of (110). The films on LAO show a single-crystalline morphology and a (100) orientation. Transport measurements show the polycrystalline films have a resistance peak approximately 60 K lower than the films on LAO and, in general, have a much higher overall resistance. The magnetoresistance (MR) ratio ([R(H) - R(0)]/R(H)) is sharply peaked near the maximum in resistance for the films on LAO, while the polycrystalline films show a noticeable absence of this sharply peaked behavior and a flat, rather large ({approximately} 100%) MR ratio over a large temperature range. These results will be discussed in terms of grain boundary scattering, crystallite size, and magnetization.

  15. Magnetoresistance detected spin collectivity in organic light emitting diodes

    NASA Astrophysics Data System (ADS)

    Malissa, Hans; Waters, David P.; Joshi, Gajadhar; Kavand, Marzieh; Limes, Mark E.; Burn, Paul L.; Lupton, John M.; Boehme, Christoph

    Organic magnetoresistance (OMAR) typically refers to the significant change in the conductivity of thin layers of organic semiconductors at low static magnetic fields (< 10 mT). When radio frequency (rf) radiation is applied to an organic semiconductor under bipolar injection, and in the presence of small magnetic fields B, magnetic resonance can occur, which is observed as a change of the OMAR effect [Baker et al., Nat. Commun. 3, 898 (2012)]. When B and the resonant driving field are stronger than local hyperfine fields, an ultrastrong coupling regime emerges, which is marked by collective spin effects analogous to the optical Dicke effect [Roundy and Raikh, Phys. Rev. B 88, 125206 (2013)]. Experimentally, this collective behavior of spins can be probed in the steady state OMAR of organic light-emitting diodes (OLEDs) at room temperature by observation of a sign reversal of the OMAR change under rf irradiation. Furthermore, in the presence of strong driving fields, an ac Zeeman effect can be observed through OMAR [Waters et al., Nat. Phys. 11, 910 (2015)], a unique window to observe room temperature macroscopic spin quantum coherence.

  16. Femtomolar limit of detection with a magnetoresistive biochip.

    PubMed

    Martins, V C; Cardoso, F A; Germano, J; Cardoso, S; Sousa, L; Piedade, M; Freitas, P P; Fonseca, L P

    2009-04-15

    In this paper the biological limit of detection of a spin-valve-based magnetoresistive biochip applied to the detection of 20 mer ssDNA hybridization events is presented. Two reactional variables and their impact on the biomolecular recognition efficiency are discussed. Both the influence of a 250 nm diameter magnetic particle attached to the target molecule during the hybridization event and the effect of a magnetic focusing system in the hybridization of pre-labeled target DNA (assisted hybridization) are addressed. The particles carrying the target molecules are attracted to the probe active sensor sites by applying a 40 mA DC current on U-shaped aluminium current lines. Experiments comparing pre-hybridization versus post-hybridization magnetic labeling and passive versus magnetically assisted hybridization were conducted. The efficiency of a passive hybridization is reduced by about 50% when constrained to the operational conditions (sample volume, reaction time, temperature and magnetic label) of an on-chip real-time hybridization assay. This reduction has shown to be constant and independent from the initial target concentration. Conversely, the presence of the magnetic label improved the limit of detection when a magnetically assisted hybridization was performed. The use of a labeled target focusing system has permitted a gain of three orders of magnitude (from 1 pM down to 1 fM) in the sensitivity of the device, as compared with passive, diffusion-controlled hybridization. PMID:19261460

  17. Giant single-molecule anisotropic magnetoresistance at room temperature.

    PubMed

    Li, Ji-Jun; Bai, Mei-Lin; Chen, Zhao-Bin; Zhou, Xiao-Shun; Shi, Zhan; Zhang, Meng; Ding, Song-Yuan; Hou, Shi-Min; Schwarzacher, Walther; Nichols, Richard J; Mao, Bing-Wei

    2015-05-13

    We report an electrochemically assisted jump-to-contact scanning tunneling microscopy (STM) break junction approach to create reproducible and well-defined single-molecule spintronic junctions. The STM break junction is equipped with an external magnetic field either parallel or perpendicular to the electron transport direction. The conductance of Fe-terephthalic acid (TPA)-Fe single-molecule junctions is measured and a giant single-molecule tunneling anisotropic magnetoresistance (T-AMR) up to 53% is observed at room temperature. Theoretical calculations based on first-principles quantum simulations show that the observed AMR of Fe-TPA-Fe junctions originates from electronic coupling at the TPA-Fe interfaces modified by the magnetic orientation of the Fe electrodes with respect to the direction of current flow. The present study highlights new opportunities for obtaining detailed understanding of mechanisms of charge and spin transport in molecular junctions and the role of interfaces in determining the MR of single-molecule junctions. PMID:25894840

  18. Decomposition of the magnetoresistance of multilayers into ferromagneticand superparamagnetic contributions

    NASA Astrophysics Data System (ADS)

    Bakonyi, I.; Péter, L.; Rolik, Z.; Kiss-Szabó, K.; Kupay, Z.; Tóth, J.; Kiss, L. F.; Pádár, J.

    2004-08-01

    An analysis of both magnetic and magnetotransport properties is presented for electrodeposited multilayers prepared intentionally under conditions to make the superparamagnetic (SPM) magnetization contribution comparable to or larger than the ferromagnetic term. Based on a model elaborated for the giant magnetoresistance (GMR) of granular metals [N. Wiser, J. Magn. Magn. Mater. 159, 119 (1996); B. Hickey , Phys. Rev. B. 51, 667 (1995)], it is shown that in such multilayers both the magnetization and the GMR can be decomposed into ferromagnetric and superparamagnetic contributions where the latter term is described by a Langevin function. The size of the SPM regions estimated from the experimental data is in the nanoscale regime. It is believed that the method applied here gives a quantitative answer to the problem of the often observed nonsaturating behavior of GMR in multilayers. Electrodeposited multilayers are particularly prone to this feature although the occurrence of SPM regions is quite common in multilayers prepared by any technique. Therefore, this type of analysis should help better understanding of the factors influencing the GMR of multilayer films.

  19. Role of structurally and magnetically modified nanoclusters in colossal magnetoresistance

    PubMed Central

    Tao, Jing; Niebieskikwiat, Dario; Jie, Qing; Schofield, Marvin A.; Wu, Lijun; Li, Qiang; Zhu, Yimei

    2011-01-01

    It is generally accepted that electronic and magnetic phase separation is the origin of many of exotic properties of strongly correlated electron materials, such as colossal magnetoresistance (CMR), an unusually large variation in the electrical resistivity under applied magnetic field. In the simplest picture, the two competing phases are those associated with the material state on either side of the phase transition. Those phases would be paramagnetic insulator and ferromagnetic metal for the CMR effect in doped manganites. It has been speculated that a critical component of the CMR phenomenon is nanoclusters with quite different properties than either of the terminal phases during the transition. However, the role of these nanoclusters in the CMR effect remains elusive because the physical properties of the nanoclusters are hard to measure when embedded in bulk materials. Here we show the unexpected behavior of the nanoclusters in the CMR compound La1-xCaxMnO3 (0.4 ≤ x < 0.5) by directly correlating transmission electron microscopy observations with bulk measurements. The structurally modified nanoclusters at the CMR temperature were found to be ferromagnetic and exhibit much higher electrical conductivity than previously proposed. Only at temperatures much below the CMR transition, the nanoclusters are antiferromagnetic and insulating. These findings substantially alter the current understanding of these nanoclusters on the material’s functionality and would shed light on the microscopic study on the competing spin-lattice-charge orders in strongly correlated systems. PMID:22160678

  20. Temperature-field phase diagram of extreme magnetoresistance.

    PubMed

    Fallah Tafti, Fazel; Gibson, Quinn; Kushwaha, Satya; Krizan, Jason W; Haldolaarachchige, Neel; Cava, Robert Joseph

    2016-06-21

    The recent discovery of extreme magnetoresistance (XMR) in LaSb introduced lanthanum monopnictides as a new platform to study this effect in the absence of broken inversion symmetry or protected linear band crossing. In this work, we report XMR in LaBi. Through a comparative study of magnetotransport effects in LaBi and LaSb, we construct a temperature-field phase diagram with triangular shape that illustrates how a magnetic field tunes the electronic behavior in these materials. We show that the triangular phase diagram can be generalized to other topological semimetals with different crystal structures and different chemical compositions. By comparing our experimental results to band structure calculations, we suggest that XMR in LaBi and LaSb originates from a combination of compensated electron-hole pockets and a particular orbital texture on the electron pocket. Such orbital texture is likely to be a generic feature of various topological semimetals, giving rise to their small residual resistivity at zero field and subject to strong scattering induced by a magnetic field. PMID:27274081

  1. Photoconductive switch package

    DOEpatents

    Ca[rasp, George J

    2013-10-22

    A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

  2. Photoconductive switch package

    SciTech Connect

    Caporaso, George J.

    2015-10-27

    A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

  3. SPARK GAP SWITCH

    DOEpatents

    Neal, R.B.

    1957-12-17

    An improved triggered spark gap switch is described, capable of precisely controllable firing time while switching very large amounts of power. The invention in general comprises three electrodes adjustably spaced and adapted to have a large potential impressed between the outer electrodes. The central electrode includes two separate elements electrically connected togetaer and spaced apart to define a pair of spark gaps between the end electrodes. Means are provided to cause the gas flow in the switch to pass towards the central electrode, through a passage in each separate element, and out an exit disposed between the two separate central electrode elements in order to withdraw ions from the spark gap.

  4. Solid state switch

    DOEpatents

    Merritt, B.T.; Dreifuerst, G.R.

    1994-07-19

    A solid state switch, with reverse conducting thyristors, is designed to operate at 20 kV hold-off voltage, 1,500 A peak, 1.0 [mu]s pulsewidth, and 4,500 pps, to replace thyratrons. The solid state switch is more reliable, more economical, and more easily repaired. The switch includes a stack of circuit card assemblies, a magnetic assist and a trigger chassis. Each circuit card assembly contains a reverse conducting thyristor, a resistor capacitor network, and triggering circuitry. 6 figs.

  5. Tunneling magnetoresistance in junctions composed of ferromagnets and time-reversal invariant topological superconductors

    NASA Astrophysics Data System (ADS)

    Yan, Zhongbo; Wan, Shaolong

    2016-02-01

    Tunneling magnetoresistance between two ferrromagnets is an issue of fundamental importance in spintronics. In this work, we show that tunneling magnetoresistance can also emerge in junctions composed of ferromagnets and time-reversal invariant topological superconductors without spin-rotation symmetry. Here the physical origin is that when the spin-polarization direction of an injected electron from the ferromagnet lies in the same plane of the spin-polarization direction of Majorana zero modes, the electron will undergo a perfect spin-equal Andreev reflection, while injected electrons with other spin-polarization directions will be partially Andreev reflected and partially normal reflected, which consequently has a lower conductance, and therefore, the magnetoresistance effect emerges. Compared to conventional magnetic tunnel junctions, an unprecedented advantage of the junctions studied here is that arbitrary high tunneling magnetoresistance can be obtained even when the magnetization of the ferromagnets are weak and the insulating tunneling barriers are featureless. Our findings provide a new fascinating mechanism to obtain high tunneling magnetoresistance.

  6. c -axis longitudinal magnetoresistance of the electron-doped superconductor Pr1.85Ce0.15CuO4

    NASA Astrophysics Data System (ADS)

    Yu, W.; Liang, B.; Greene, R. L.

    2006-12-01

    We report c -axis resistivity and longitudinal magnetoresistance measurements of superconducting Pr1.85Ce0.15CuO4 single crystals. In the temperature range 13⩽T⩽32K , a negative magnetoresistance is observed at fields just above HC2 . Our studies suggest that this negative magnetoresistance is caused by superconducting fluctuations. At lower temperatures (T⩽13K) , a different magnetoresistance behavior and a resistivity upturn are observed, whose origin is still unknown.

  7. Magnetic anisotropy and anisotropic magnetoresistance in strongly phase separated manganite thin films

    NASA Astrophysics Data System (ADS)

    Kandpal, Lalit M.; Singh, Sandeep; Kumar, Pawan; Siwach, P. K.; Gupta, Anurag; Awana, V. P. S.; Singh, H. K.

    2016-06-01

    The present study reports the impact of magnetic anisotropy (MA) on magnetotransport properties such as the magnetic transitions, magnetic liquid behavior, glass transition and anisotropic magnetoresistance (AMR) in epitaxial film (thickness 42 nm) of strongly phase separated manganite La5/8-yPryCa3/8MnO3 (y≈0.4). Angle dependent magnetization measurement confirms the out-of-plane magnetic anisotropy with the magnetic easy axes aligned in the plane of the film and the magnetic hard axis along the normal to the film plane. The more prominent divergence between the zero filed cooled (ZFC) and field cooled warming (FCW) and the stronger hysteresis between the field cooled cooling (FCC) and FCW magnetization for H ∥ shows the weakening of the magnetic liquid along the magnetic hard axis. The peak at Tp≈42 K in FCW magnetization, which characterizes the onset of spin freezing shifts down to Tp≈18 K as the field direction is switched from the easy axes (H ∥) to the hard axis (H ⊥). The glass transition, which appears at Tg≈28 K for H ∥ disappears for H ⊥. The easy axis magnetization (M∣∣) appears to saturate around H~20 kOe, but the hard axis counterpart (M⊥) does not show such tendency even up to H=50 kOe. MA appears well above the ferromagnetic (FM) transition at T≈170 K, which is nearly the same as the Neel temperature (TN) of M⊥ - T . The temperature dependent resistivity measured at H=10 kOe applied along the easy axis (ρ|| - T) and the hard axis (ρ⊥ - T) shows insulator metal transition (IMT) at ≈106 K and ≈99 K in the cooling cycle, respectively. The large difference between ρ⊥ - T and ρ|| - T during the cooling cycle and in the vicinity of IMT results in huge AMR of ≈-142% and -115%. The observed properties have been explained in terms of the MA induced variation in the relative fraction of the coexisting magnetic phases.

  8. Cryogenic Quad-Redundant Thermal Switch

    NASA Astrophysics Data System (ADS)

    Thompson, B. C.; Lloyd, B.; Schick, S. H.; Li, L.

    2008-03-01

    A Quad-Redundant Thermal Switch (QRTS) for the James Webb Space Telescope has been successfully designed, fabricated, and tested at the Space Dynamics Laboratory (SDL). A flight-like prototype successfully passed thermal and structural qualification tests in a representative space environment and achieved Technology Readiness Level 6. The QRTS serves as a high thermal conductance, high reliability thermal connect/disconnect between heat sources and sinks. The switch design is passively closed over the entire operational range of 32-300 K. The construction is an all metallic core packaged in a cross-strapped quad-redundant configuration. Actuation of the switch is based on differential thermal expansion and is opened by applying heat to the mechanism. Key qualification tests included: robust characterization of thermal closed and open performance from 32 to 313 K; and a full suite of vibration testing (sine, random, and sine burst). This paper presents an overview of the QRTS functionality, thermal and structural qualification tests, and resulting switch performance.

  9. Switching and stopping antidepressants.

    PubMed

    Keks, Nicholas; Hope, Judy; Keogh, Simone

    2016-06-01

    Switching from one antidepressant to another is frequently indicated due to an inadequate treatment response or unacceptable adverse effects. All antidepressant switches must be carried out cautiously and under close observation. Conservative switching strategies involve gradually tapering the first antidepressant followed by an adequate washout period before the new antidepressant is started. This can take a long time and include periods of no treatment with the risk of potentially life-threatening exacerbations of illness. Clinical expertise is needed for more rapid or cross-taper switching as drug toxicity, including serotonin syndrome, may result from inappropriate co-administration of antidepressants. Some antidepressants must not be combined. Antidepressants can cause withdrawal syndromes if discontinued abruptly after prolonged use. Relapse and exacerbation of depression can also occur. Gradual dose reduction over days to weeks reduces the risk and severity of complications. PMID:27346915

  10. An optical switch

    DOEpatents

    Christophorou, L.G.; Hunter, S.R.

    1987-04-30

    The invention is a gas mixture for a diffuse discharge switch having an electron attaching gas wherein electron attachment is brought about by indirect excitation of molecules to long live states by exposure to laser light. 3 figs.

  11. Switching and stopping antidepressants

    PubMed Central

    Keks, Nicholas; Hope, Judy; Keogh, Simone

    2016-01-01

    SUMMARY Switching from one antidepressant to another is frequently indicated due to an inadequate treatment response or unacceptable adverse effects. All antidepressant switches must be carried out cautiously and under close observation. Conservative switching strategies involve gradually tapering the first antidepressant followed by an adequate washout period before the new antidepressant is started. This can take a long time and include periods of no treatment with the risk of potentially life-threatening exacerbations of illness. Clinical expertise is needed for more rapid or cross-taper switching as drug toxicity, including serotonin syndrome, may result from inappropriate co-administration of antidepressants. Some antidepressants must not be combined. Antidepressants can cause withdrawal syndromes if discontinued abruptly after prolonged use. Relapse and exacerbation of depression can also occur. Gradual dose reduction over days to weeks reduces the risk and severity of complications. PMID:27346915

  12. Plasmonic enhanced ultrafast switch.

    SciTech Connect

    Subramania,Ganapathi Subramanian; Reno, John Louis; Passmore, Brandon Scott; Harris, Tom.; Shaner, Eric Arthur; Barrick, Todd A.

    2009-09-01

    Ultrafast electronic switches fabricated from defective material have been used for several decades in order to produce picosecond electrical transients and TeraHertz radiation. Due to the ultrashort recombination time in the photoconductor materials used, these switches are inefficient and are ultimately limited by the amount of optical power that can be applied to the switch before self-destruction. The goal of this work is to create ultrafast (sub-picosecond response) photoconductive switches on GaAs that are enhanced through plasmonic coupling structures. Here, the plasmonic coupler primarily plays the role of being a radiation condenser which will cause carriers to be generated adjacent to metallic electrodes where they can more efficiently be collected.

  13. High average power switching in diamond

    SciTech Connect

    Hofer, W.W.; Schoenbach, K.H.

    1992-06-01

    Diamond has many properties which make it ideal for a high power solid-state switch. The crystal structure of diamond is relatively well characterized. It is a semiconductor with a band-gap of 5.5 eV at 300{degree}K. The high band-gap of diamond results in a small dark current compared to Si or GaAs. As a result the breakdown field or holding voltage is very high, 1--10 MV/cm. The electron and hole mobility are approximately 2000 cm{sup 2}/v-sec. At room temperature, diamond has the highest thermal conductivity of any solid, 20 W/{degree}K -cm, about five times that of copper. This is ideal for switching because heat dissipation and thermal runaway problems are greatly mitigated. Our switch concept uses a low current (switch. Electron beam control offers much higher efficiency and flexibility than laser control. We obtained experimental results with electron beam activated diamond films which were CVD grown on an n-type silicon substrate. With the substrate biased positive, the switch current was found to follow the electron beam pulse up to fields of about 0.9 MV/cm where ``lock-on`` occurred, i.e., the switch current continued to flow even after the electron beam was turned off. This effect, most likely due to double charge injection, was suppressed by biasing the n-silicon substrate negatively. The switch current then followed the electron beam pulse up to electric fields of 1.8 MV/cm, limited by our electrical circuit, with no evidence of ``lock-on.`` The predictable response of the switch current to the electron beam pulse at extreme,applied fields make electron beam controlled diamond switch a promising candidate for a high power on-off switch. Steady advancements in CVD polycrystalline and single crystal diamond help make this possible.

  14. High average power switching in diamond

    SciTech Connect

    Hofer, W.W. ); Schoenbach, K.H. )

    1992-06-01

    Diamond has many properties which make it ideal for a high power solid-state switch. The crystal structure of diamond is relatively well characterized. It is a semiconductor with a band-gap of 5.5 eV at 300[degree]K. The high band-gap of diamond results in a small dark current compared to Si or GaAs. As a result the breakdown field or holding voltage is very high, 1--10 MV/cm. The electron and hole mobility are approximately 2000 cm[sup 2]/v-sec. At room temperature, diamond has the highest thermal conductivity of any solid, 20 W/[degree]K -cm, about five times that of copper. This is ideal for switching because heat dissipation and thermal runaway problems are greatly mitigated. Our switch concept uses a low current (switch. Electron beam control offers much higher efficiency and flexibility than laser control. We obtained experimental results with electron beam activated diamond films which were CVD grown on an n-type silicon substrate. With the substrate biased positive, the switch current was found to follow the electron beam pulse up to fields of about 0.9 MV/cm where lock-on'' occurred, i.e., the switch current continued to flow even after the electron beam was turned off. This effect, most likely due to double charge injection, was suppressed by biasing the n-silicon substrate negatively. The switch current then followed the electron beam pulse up to electric fields of 1.8 MV/cm, limited by our electrical circuit, with no evidence of lock-on.'' The predictable response of the switch current to the electron beam pulse at extreme,applied fields make electron beam controlled diamond switch a promising candidate for a high power on-off switch. Steady advancements in CVD polycrystalline and single crystal diamond help make this possible.

  15. Irreversible magnetic switch

    SciTech Connect

    Karnowsky, M.M.; Yost, F.G.

    1991-12-31

    This invention is comprised of an irreversible magnetic switch containing a ferromagnetic amorphous metal having a predetermined crystallization temperature in its inductor magnetic path. With the incorporation of such material, the magnetic properties after cooling from a high temperature excursion above its crystallization temperature are only a fraction of the original value. The difference is used to provide a safety feature in the magnetic switch.

  16. High Power Switching Transistor

    NASA Technical Reports Server (NTRS)

    Hower, P. L.; Kao, Y. C.; Carnahan, D. C.

    1983-01-01

    Improved switching transistors handle 400-A peak currents and up to 1,200 V. Using large diameter silicon wafers with twice effective area as D60T, form basis for D7 family of power switching transistors. Package includes npn wafer, emitter preform, and base-contact insert. Applications are: 25to 50-kilowatt high-frequency dc/dc inverters, VSCF converters, and motor controllers for electrical vehicles.

  17. Cygnus Water Switch Jitter

    SciTech Connect

    Charles V. Mitton, George D. Corrow, Mark D. Hansen, David J. Henderson, et al.

    2008-03-01

    The Cygnus Dual Beam Radiographic Facility consists of two identical radiographic sources - Cygnus 1 and Cygnus 2. Each source has the following x-ray output: 1-mm diameter spot size, 4 rad at 1 m, 50-ns Full Width Half Max. The diode pulse has the following electrical specifications: 2.25 MV, 60 kA, 60 ns. This Radiographic Facility is located in an underground tunnel test area at the Nevada Test Site (NTS). The sources were developed to produce high-resolution images on subcritical tests which are performed at NTS. Subcritical tests are single-shot, high-value events. For this application, it is desirable to maintain a high level of reproducibility in source output. The major components of the Cygnus machines are: Marx generator, water-filled pulse–forming line (PFL), water-filled coaxial transmission line, three-cell inductive voltage adder, and rod-pinch diode. A primary source of fluctuation in Cygnus shot-to-shot performance is jitter in breakdown of the main PFL switch, which is a “self-break” switch. The PFL switch breakdown time determines the peak PFL charging voltage, which ultimately affects the diode pulse. Therefore, PFL switch jitter contributes to shot-to-shot variation in source endpoint energy and dose. In this paper we will present PFL switch jitter analysis for both Cygnus machines and give the correlation with diode performance. For this analysis the PFL switch on each machine was maintained at a single gap setting which has been used for the majority of shots at NTS. In addition to this analysis, PFL switch performance for different switch gap settings taken recently will be examined. Lastly, implications of source jitter for radiographic diagnosis of subcritical shots will be discussed.

  18. Optical shutter switching matrix

    NASA Technical Reports Server (NTRS)

    Grove, Charles H.

    1991-01-01

    The interface switching systems are discussed which are related to those used in the Space Shuttle ground control system, transmission systems, communications systems, and airborne radar electronic countermeasure systems. The main goal is to identify a need that exists throughout the comprehensive information processing and communications disciplines supporting the Space Shuttle and Space Station programs, and introduce one viable approach to satisfy that need. The proposed device, described in NASA patent entitled 'Optical Shutter Switch Matrix', is discussed.

  19. Finding a stabilising switching law for switching nonlinear models

    NASA Astrophysics Data System (ADS)

    Lendek, Zs.; Raica, P.; Lauber, J.; Guerra, T. M.

    2016-09-01

    This paper considers the stabilisation of switching nonlinear models by switching between the subsystems. We assume that arbitrary switching between two subsystems is possible once a subsystem has been active for a predefined number of samples. We use a Takagi-Sugeno representation of the models and a switching Lyapunov function is employed to develop sufficient stability conditions. If the conditions are satisfied, we construct a switching law that stabilises the system. The application of the conditions is illustrated in several examples.

  20. Discrete Layer-by-Layer Magnetic Switching in Fe /MgO (001 ) Superlattices

    NASA Astrophysics Data System (ADS)

    Moubah, R.; Magnus, F.; Warnatz, T.; Palsson, G. K.; Kapaklis, V.; Ukleev, V.; Devishvili, A.; Palisaitis, J.; Persson, P. O. Å.; Hjörvarsson, B.

    2016-04-01

    We report on a discrete layer-by-layer magnetic switching in Fe /MgO superlattices driven by an antiferromagnetic interlayer exchange coupling. The strong interlayer coupling is mediated by tunneling through MgO layers with thicknesses up to at least 1.8 nm, and the coupling strength varies with MgO thickness. Furthermore, the competition between the interlayer coupling and magnetocrystalline anisotropy stabilizes both 90° and 180° periodic alignment of adjacent layers throughout the entire superlattice. The tunable layer-by-layer switching, coupled with the giant tunneling magnetoresistance of Fe /MgO /Fe junctions, is an appealing combination for three-dimensional spintronic memories and logic devices.

  1. Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions

    PubMed Central

    Yau, H. M.; Yan, Z. B.; Chan, N. Y.; Au, K.; Wong, C. M.; Leung, C. W.; Zhang, F.Y.; Gao, X. S.; Dai, J. Y.

    2015-01-01

    Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO3/La0.7Sr0.3MnO3 with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure. PMID:26239505

  2. Giant amplification of tunnel magnetoresistance in a molecular junction: Molecular spin-valve transistor

    SciTech Connect

    Dhungana, Kamal B.; Pati, Ranjit

    2014-04-21

    Amplification of tunnel magnetoresistance by gate field in a molecular junction is the most important requirement for the development of a molecular spin valve transistor. Herein, we predict a giant amplification of tunnel magnetoresistance in a single molecular spin valve junction, which consists of Ru-bis-terpyridine molecule as a spacer between two ferromagnetic nickel contacts. Based on the first-principles quantum transport approach, we show that a modest change in the gate field that is experimentally accessible can lead to a substantial amplification (320%) of tunnel magnetoresistance. The origin of such large amplification is attributed to the spin dependent modification of orbitals at the molecule-lead interface and the resultant Stark effect induced shift in channel position with respect to the Fermi energy.

  3. Room Temperature Giant and Linear Magnetoresistance in Topological Insulator Bi2Te3 Nanosheets

    NASA Astrophysics Data System (ADS)

    Wang, Xiaolin; Du, Yi; Dou, Shixue; Zhang, Chao

    2012-06-01

    Topological insulators, a new class of condensed matter having bulk insulating states and gapless metallic surface states, have demonstrated fascinating quantum effects. However, the potential practical applications of the topological insulators are still under exploration worldwide. We demonstrate that nanosheets of a Bi2Te3 topological insulator several quintuple layers thick display giant and linear magnetoresistance. The giant and linear magnetoresistance achieved is as high as over 600% at room temperature, with a trend towards further increase at higher temperatures, as well as being weakly temperature-dependent and linear with the field, without any sign of saturation at measured fields up to 13 T. Furthermore, we observed a magnetic field induced gap below 10 K. The observation of giant and linear magnetoresistance paves the way for 3D topological insulators to be useful for practical applications in magnetoelectronic sensors such as disk reading heads, mechatronics, and other multifunctional electromagnetic applications.

  4. Negative magnetoresistance without well-defined chirality in the Weyl semimetal TaP

    PubMed Central

    Arnold, Frank; Shekhar, Chandra; Wu, Shu-Chun; Sun, Yan; dos Reis, Ricardo Donizeth; Kumar, Nitesh; Naumann, Marcel; Ajeesh, Mukkattu O.; Schmidt, Marcus; Grushin, Adolfo G.; Bardarson, Jens H.; Baenitz, Michael; Sokolov, Dmitry; Borrmann, Horst; Nicklas, Michael; Felser, Claudia; Hassinger, Elena; Yan, Binghai

    2016-01-01

    Weyl semimetals (WSMs) are topological quantum states wherein the electronic bands disperse linearly around pairs of nodes with fixed chirality, the Weyl points. In WSMs, nonorthogonal electric and magnetic fields induce an exotic phenomenon known as the chiral anomaly, resulting in an unconventional negative longitudinal magnetoresistance, the chiral-magnetic effect. However, it remains an open question to which extent this effect survives when chirality is not well-defined. Here, we establish the detailed Fermi-surface topology of the recently identified WSM TaP via combined angle-resolved quantum-oscillation spectra and band-structure calculations. The Fermi surface forms banana-shaped electron and hole pockets surrounding pairs of Weyl points. Although this means that chirality is ill-defined in TaP, we observe a large negative longitudinal magnetoresistance. We show that the magnetoresistance can be affected by a magnetic field-induced inhomogeneous current distribution inside the sample. PMID:27186980

  5. Negative magnetoresistance without well-defined chirality in the Weyl semimetal TaP.

    PubMed

    Arnold, Frank; Shekhar, Chandra; Wu, Shu-Chun; Sun, Yan; Dos Reis, Ricardo Donizeth; Kumar, Nitesh; Naumann, Marcel; Ajeesh, Mukkattu O; Schmidt, Marcus; Grushin, Adolfo G; Bardarson, Jens H; Baenitz, Michael; Sokolov, Dmitry; Borrmann, Horst; Nicklas, Michael; Felser, Claudia; Hassinger, Elena; Yan, Binghai

    2016-01-01

    Weyl semimetals (WSMs) are topological quantum states wherein the electronic bands disperse linearly around pairs of nodes with fixed chirality, the Weyl points. In WSMs, nonorthogonal electric and magnetic fields induce an exotic phenomenon known as the chiral anomaly, resulting in an unconventional negative longitudinal magnetoresistance, the chiral-magnetic effect. However, it remains an open question to which extent this effect survives when chirality is not well-defined. Here, we establish the detailed Fermi-surface topology of the recently identified WSM TaP via combined angle-resolved quantum-oscillation spectra and band-structure calculations. The Fermi surface forms banana-shaped electron and hole pockets surrounding pairs of Weyl points. Although this means that chirality is ill-defined in TaP, we observe a large negative longitudinal magnetoresistance. We show that the magnetoresistance can be affected by a magnetic field-induced inhomogeneous current distribution inside the sample. PMID:27186980

  6. Anomalous electronic structure and magnetoresistance in TaAs2

    SciTech Connect

    Luo, Yongkang; McDonald, R. D.; Rosa, P. F. S.; Scott, B.; Wakeham, N.; Ghimire, N. J.; Bauer, E. D.; Thompson, J. D.; Ronning, F.

    2016-01-01

    We report that the change in resistance of a material in a magnetic field reflects its electronic state. In metals with weakly- or non-interacting electrons, the resistance typically increases upon the application of a magnetic field. In contrast, negative magnetoresistance may appear under some circumstances, e.g., in metals with anisotropic Fermi surfaces or with spin-disorder scattering and semimetals with Dirac or Weyl electronic structures. Here we show that the non-magnetic semimetal TaAs2 possesses a very large negative magnetoresistance, with an unknown scattering mechanism. In conclusion, density functional calculations find that TaAs2 is a new topological semimetal [Z2 invariant (0;111)] without Dirac dispersion, demonstrating that a negative magnetoresistance in non-magnetic semimetals cannot be attributed uniquely to the Adler-Bell-Jackiw chiral anomaly of bulk Dirac/Weyl fermions.

  7. Universality of Effective Medium and Random Resistor Network models for disorder-induced linear unsaturating magnetoresistance

    NASA Astrophysics Data System (ADS)

    Lara, Silvia; Lai, Ying Tong; Love, Cameron; Ramakrishnan, Navneeth; Adam, Shaffique

    In recent years, the Effective Medium Theory (EMT) and the Random Resistor Network (RRN) have been separately used to explain disorder induced magnetoresistance that is quadratic at low fields and linear at high fields. We demonstrate that the quadratic and linear coefficients of the magnetoresistance and the transition point from the quadratic to the linear regime depend only on the inhomogeneous carrier density profile. We use this to find a mapping between the two models using dimensionless parameters that determine the magnetoresistance and show numerically that they belong to the same universality class. This work is supported by the Singapore National Research Foundation (NRF-NRFF2012-01) and the Singapore Ministry of Education and Yale-NUS College through Grant Number R-607-265-01312.

  8. Impact of Tunnel-Barrier Strength on Magnetoresistance in Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Morgan, Caitlin; Misiorny, Maciej; Metten, Dominik; Heedt, Sebastian; Schäpers, Thomas; Schneider, Claus M.; Meyer, Carola

    2016-05-01

    We investigate magnetoresistance in spin valves involving CoPd-contacted carbon nanotubes. Both the temperature and bias-voltage dependence clearly indicate tunneling magnetoresistance as the origin. We show that this effect is significantly affected by the tunnel-barrier strength, which appears to be one reason for the variation between devices previously detected in similar structures. Modeling the data by means of the scattering matrix approach, we find a nontrivial dependence of the magnetoresistance on the barrier strength. Furthermore, an analysis of the spin precession observed in a nonlocal Hanle measurement yields a spin lifetime of τs=1.1 ns , a value comparable with those found in silicon- or graphene-based spin-valve devices.

  9. Tunnel anisotropic magnetoresistance in CoFeB|MgO|Ta junctions

    SciTech Connect

    Hatanaka, S.; Miwa, S. Matsuda, K.; Nawaoka, K.; Tanaka, K.; Morishita, H.; Goto, M.; Mizuochi, N.; Shinjo, T.; Suzuki, Y.

    2015-08-24

    We found that CoFeB|MgO|Ta tunnel junctions exhibit tunnel anisotropic magnetoresistance (TAMR) at room temperature. The tunnel junctions exhibit positive magnetoresistance with the application of a magnetic field normal to the film plane. The dependencies on the applied magnetic field angle and MgO thickness reveal that the magnetoresistance originates from the TAMR, caused by the spin polarization and the spin-orbit interaction at the CoFeB|MgO interface. We also found that the TAMR can be used to detect ferromagnetic resonance in the CoFeB. This detection method could be useful for the characterization of nanomagnets that are free from the spin-transfer effect and the stray field of a reference layer, unlike conventional magnetic tunnel junctions.

  10. Anomalous magnetoresistance in the spinel superconductor LiTi2O4

    NASA Astrophysics Data System (ADS)

    Jin, K.; He, G.; Zhang, X.; Maruyama, S.; Yasui, S.; Suchoski, R.; Shin, J.; Jiang, Y.; Yu, H. S.; Yuan, J.; Shan, L.; Kusmartsev, F. V.; Greene, R. L.; Takeuchi, I.

    2015-05-01

    LiTi2O4 is a unique compound in that it is the only known spinel oxide superconductor. The lack of high quality single crystals has thus far prevented systematic investigations of its transport properties. Here we report a careful study of transport and tunnelling spectroscopy in epitaxial LiTi2O4 thin films. An unusual magnetoresistance is observed which changes from nearly isotropic negative to prominently anisotropic positive as the temperature is decreased. We present evidence that shows that the negative magnetoresistance likely stems from the suppression of local spin fluctuations or spin-orbit scattering centres. The positive magnetoresistance suggests the presence of an orbital-related state, also supported by the fact that the superconducting energy gap decreases as a quadratic function of magnetic field. These observations indicate that the spin-orbital fluctuations play an important role in LiTi2O4 in a manner similar to high-temperature superconductors.

  11. Negative magnetoresistance without well-defined chirality in the Weyl semimetal TaP

    NASA Astrophysics Data System (ADS)

    Arnold, Frank; Shekhar, Chandra; Wu, Shu-Chun; Sun, Yan; Dos Reis, Ricardo Donizeth; Kumar, Nitesh; Naumann, Marcel; Ajeesh, Mukkattu O.; Schmidt, Marcus; Grushin, Adolfo G.; Bardarson, Jens H.; Baenitz, Michael; Sokolov, Dmitry; Borrmann, Horst; Nicklas, Michael; Felser, Claudia; Hassinger, Elena; Yan, Binghai

    2016-05-01

    Weyl semimetals (WSMs) are topological quantum states wherein the electronic bands disperse linearly around pairs of nodes with fixed chirality, the Weyl points. In WSMs, nonorthogonal electric and magnetic fields induce an exotic phenomenon known as the chiral anomaly, resulting in an unconventional negative longitudinal magnetoresistance, the chiral-magnetic effect. However, it remains an open question to which extent this effect survives when chirality is not well-defined. Here, we establish the detailed Fermi-surface topology of the recently identified WSM TaP via combined angle-resolved quantum-oscillation spectra and band-structure calculations. The Fermi surface forms banana-shaped electron and hole pockets surrounding pairs of Weyl points. Although this means that chirality is ill-defined in TaP, we observe a large negative longitudinal magnetoresistance. We show that the magnetoresistance can be affected by a magnetic field-induced inhomogeneous current distribution inside the sample.

  12. Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy.

    PubMed

    Jeong, Jaewoo; Ferrante, Yari; Faleev, Sergey V; Samant, Mahesh G; Felser, Claudia; Parkin, Stuart S P

    2016-01-18

    Although high-tunnelling spin polarization has been observed in soft, ferromagnetic, and predicted for hard, ferrimagnetic Heusler materials, there has been no experimental observation to date of high-tunnelling magnetoresistance in the latter. Here we report the preparation of highly textured, polycrystalline Mn3Ge films on amorphous substrates, with very high magnetic anisotropy fields exceeding 7 T, making them technologically relevant. However, the small and negative tunnelling magnetoresistance that we find is attributed to predominant tunnelling from the lower moment Mn-Ge termination layers that are oppositely magnetized to the higher moment Mn-Mn layers. The net spin polarization of the current reflects the different proportions of the two distinct termination layers and their associated tunnelling matrix elements that result from inevitable atomic scale roughness. We show that by engineering the spin polarization of the two termination layers to be of the same sign, even though these layers are oppositely magnetized, high-tunnelling magnetoresistance is possible.

  13. Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Jeong, Jaewoo; Ferrante, Yari; Faleev, Sergey V.; Samant, Mahesh G.; Felser, Claudia; Parkin, Stuart S. P.

    2016-01-01

    Although high-tunnelling spin polarization has been observed in soft, ferromagnetic, and predicted for hard, ferrimagnetic Heusler materials, there has been no experimental observation to date of high-tunnelling magnetoresistance in the latter. Here we report the preparation of highly textured, polycrystalline Mn3Ge films on amorphous substrates, with very high magnetic anisotropy fields exceeding 7 T, making them technologically relevant. However, the small and negative tunnelling magnetoresistance that we find is attributed to predominant tunnelling from the lower moment Mn-Ge termination layers that are oppositely magnetized to the higher moment Mn-Mn layers. The net spin polarization of the current reflects the different proportions of the two distinct termination layers and their associated tunnelling matrix elements that result from inevitable atomic scale roughness. We show that by engineering the spin polarization of the two termination layers to be of the same sign, even though these layers are oppositely magnetized, high-tunnelling magnetoresistance is possible.

  14. Transition from positive to negative magnetoresistance induced by a constriction in semiconductor nanowire

    NASA Astrophysics Data System (ADS)

    Wołoszyn, M.; Spisak, B. J.; Wójcik, P.; Adamowski, J.

    2016-09-01

    We have studied the magnetotransport through an indium antimonide (InSb) nanowire grown in [111] direction, with a geometric constriction and in an external magnetic field applied along the nanowire axis. We have found that the magnetoresistance is negative for the narrow constriction, nearly zero for the constriction of some intermediate radius, and takes on positive values for the constriction with the radius approaching that of the nanowire. For all magnitudes of the magnetic field, the radius of constriction at which the change of the magnetoresistance sign takes place has been found to be almost the same as long as other geometric parameters of the nanowire are fixed. The sign reversing of the magnetoresistance is explained as a combined effect of two factors: the influence of the constriction on the transverse states and the spin Zeeman effect.

  15. Distinctive uniaxial magnetic anisotropy and positive magnetoresistance in (110)-oriented Fe3O4 films

    NASA Astrophysics Data System (ADS)

    Dho, Joonghoe; Kim, Byeong-geon; Ki, Sanghoon

    2015-04-01

    Magnetite (Fe3O4) films were synthesized on (110)-oriented MgO, MgAl2O4, and SrTiO3 substrates for comparative studies of the substrates' effects on magnetic and magnetoresistance properties of the films. For the [-110] direction, the hysteresis loops of the Fe3O4 film on MgAl2O4 exhibited a good squareness with the largest coercivity of ˜1090 Oe, and the ratio of remanent magnetization to saturation magnetization was ˜0.995. For the [001] direction, positive magnetoresistance in weak magnetic fields was most distinct for the (110) SrTiO3 substrate with the largest lattice mismatch. Positive magnetoresistance in the (110) Fe3O4 films was presumably affected by imperfect atomic arrangements at anti-phase boundaries.

  16. Electric field dependence of junction magnetoresistance in magnetite/semiconductor heterostructure at room temperature

    NASA Astrophysics Data System (ADS)

    Aireddy, H.; Bhaumik, S.; Das, A. K.

    2015-12-01

    We have fabricated Fe3O4/p-Si heterojunction using pulsed laser deposition technique and explored its electro-magnetic transport properties. The heterojunction exhibits backward rectifying property at all temperatures, and appraisal of giant junction magnetoresistance (JMR) is observed at room temperature (RT). Conspicuously, the variation and sign change of JMR as a function of electric field is observed at RT. The backward rectifying behavior of the device is ascribed to the highly doped p-type (p++) semiconducting nature of Fe3O4, and the origin of electric field (voltage) dependence of magnetoresistance is explained proposing electronic band diagram of Fe3O4/SiO2/p-Si heterojunction. This interesting result may have importance to integrate Si-based magnetoresistance sources in multifunctional spintronic devices.

  17. Electric field dependence of junction magnetoresistance in magnetite/semiconductor heterostructure at room temperature

    SciTech Connect

    Aireddy, H.; Bhaumik, S.; Das, A. K.

    2015-12-07

    We have fabricated Fe{sub 3}O{sub 4}/p-Si heterojunction using pulsed laser deposition technique and explored its electro-magnetic transport properties. The heterojunction exhibits backward rectifying property at all temperatures, and appraisal of giant junction magnetoresistance (JMR) is observed at room temperature (RT). Conspicuously, the variation and sign change of JMR as a function of electric field is observed at RT. The backward rectifying behavior of the device is ascribed to the highly doped p-type (p{sup ++}) semiconducting nature of Fe{sub 3}O{sub 4}, and the origin of electric field (voltage) dependence of magnetoresistance is explained proposing electronic band diagram of Fe{sub 3}O{sub 4}/SiO{sub 2}/p-Si heterojunction. This interesting result may have importance to integrate Si-based magnetoresistance sources in multifunctional spintronic devices.

  18. Room temperature giant and linear magnetoresistance in topological insulator Bi2Te3 nanosheets.

    PubMed

    Wang, Xiaolin; Du, Yi; Dou, Shixue; Zhang, Chao

    2012-06-29

    Topological insulators, a new class of condensed matter having bulk insulating states and gapless metallic surface states, have demonstrated fascinating quantum effects. However, the potential practical applications of the topological insulators are still under exploration worldwide. We demonstrate that nanosheets of a Bi(2)Te(3) topological insulator several quintuple layers thick display giant and linear magnetoresistance. The giant and linear magnetoresistance achieved is as high as over 600% at room temperature, with a trend towards further increase at higher temperatures, as well as being weakly temperature-dependent and linear with the field, without any sign of saturation at measured fields up to 13 T. Furthermore, we observed a magnetic field induced gap below 10 K. The observation of giant and linear magnetoresistance paves the way for 3D topological insulators to be useful for practical applications in magnetoelectronic sensors such as disk reading heads, mechatronics, and other multifunctional electromagnetic applications.

  19. Negative magnetoresistance in a vertical single-layer graphene spin valve at room temperature.

    PubMed

    Singh, Arun Kumar; Eom, Jonghwa

    2014-02-26

    Single-layer graphene (SLG) is an ideal material for spintronics because of its high charge-carrier mobility, long spin lifetime resulting from the small spin-orbit coupling, and hyperfine interactions of carbon atoms. Here, we report a vertical spin valve with SLG with device configuration Co/SLG/Al2O3/Ni. We observed negative magnetoresistance (-0.4%) for the Co/SLG/Al2O3/Ni junction at room temperature. However, the Co/Al2O3/Ni junction, which is without graphene, shows positive magnetoresistance. The current-voltage (I-V) characteristics of both Co/SLG/Al2O3/Ni and Co/Al2O3/Ni junctions are nonlinear, and this reveals that charge transport occurs by a tunneling mechanism. We have also explained the reason for negative magnetoresistance for the Co/SLG/Al2O3/Ni junction. PMID:24495123

  20. Low inductance gas switching.

    SciTech Connect

    Chavez, Ray; Harjes, Henry Charles III; Wallace, Zachariah; Elizondo, Juan E.

    2007-10-01

    The laser trigger switch (LTS) is a key component in ZR-type pulsed power systems. In ZR, the pulse rise time through the LTS is > 200 ns and additional stages of pulse compression are required to achieve the desired <100 ns rise time. The inductance of the LTS ({approx}500nH) in large part determines the energy transfer time through the switch and there is much to be gained in improving system performance and reducing system costs by reducing this inductance. The current path through the cascade section of the ZR LTS is at a diameter of {approx} 6-inches which is certainly not optimal from an inductance point of view. The LTS connects components of much greater diameter (typically 4-5 feet). In this LDRD the viability of switch concepts in which the diameter of cascade section is greatly increased have been investigated. The key technical question to be answered was, will the desired multi-channel behavior be maintained in a cascade section of larger diameter. This LDRD proceeded in 2 distinct phases. The original plan for the LDRD was to develop a promising switch concept and then design, build, and test a moderate scale switch which would demonstrate the key features of the concept. In phase I, a switch concept which meet all electrical design criteria and had a calculated inductance of 150 nH was developed. A 1.5 MV test switch was designed and fabrication was initiated. The LDRD was then redirected due to budgetary concerns. The fabrication of the switch was halted and the focus of the LDRD was shifted to small scale experiments designed to answer the key technical question concerning multi-channel behavior. In phase II, the Multi-channel switch test bed (MCST) was designed and constructed. The purpose of MCST was to provide a versatile, fast turn around facility for the study the multi-channel electrical breakdown behavior of a ZR type cascade switch gap in a parameter space near that of a ZR LTS. Parameter scans on source impedance, gap tilt, gap spacing and

  1. Micro-Ball-Lens Optical Switch Driven by SMA Actuator

    NASA Technical Reports Server (NTRS)

    Yang, Eui-Hyeok

    2003-01-01

    The figure is a simplified cross section of a microscopic optical switch that was partially developed at the time of reporting the information for this article. In a fully developed version, light would be coupled from an input optical fiber to one of two side-by-side output optical fibers. The optical connection between the input and the selected output fiber would be made via a microscopic ball lens. Switching of the optical connection from one output fiber to another would be effected by using a pair of thin-film shape-memory-alloy (SMA) actuators to toggle the lens between two resting switch positions. There are many optical switches some made of macroscopic parts by conventional fabrication techniques and some that are microfabricated and, hence, belong to the class of microelectromechanical systems (MEMS). Conventionally fabricated optical switches tend to be expensive. MEMS switches can be mass-produced at relatively low cost, but their attractiveness has been diminished by the fact that, heretofore, MEMS switches have usually been found to exhibit high insertion losses. The present switch is intended to serve as a prototype of low-loss MEMS switches. In addition, this is the first reported SMA-based optical switch. The optical fibers would be held in V grooves in a silicon frame. The lens would have a diameter of 1 m; it would be held by, and positioned between, the SMA actuators, which would be made of thin films of TiNi alloy. Although the SMA actuators are depicted here as having simple shapes for the sake of clarity of illustration, the real actuators would have complex, partly net-like shapes. With the exception of the lens and the optical fibers, the SMA actuators and other components of the switch would be made by microfabrication techniques. The components would be assembled into a sandwich structure to complete the fabrication of the switch. To effect switching, an electric current would be passed through one of the SMA actuators to heat it above

  2. Magnetoresistance in antiferromagnet-based spin tunnel junctions

    NASA Astrophysics Data System (ADS)

    Jungwirth, Tomas

    2012-02-01

    To date spintronics research and applications of magnetically ordered systems have focused on ferromagnets (FMs). There are, however, fundamental physical limitations for FM materials which may make them impractical to realize the full potential of spintronics. Metal FMs offer high temperature operation but the large magnetic stray fields make them unfavorable for high-density integration and metals are unsuitable for transistor and information processing applications. FM semiconductors on the other hand do not allow for high-temperature operation. We present a concept in which these limitations are circumvented in spintronics based on antiferromagnets. The concept is based on relativistic magnetic and magneto-transport anisotropy effects in nanodevices whose common characteristics is that they are an even function of the microscopic magnetic moment vector, i.e., can be equally strong in AFMs as in FMs. As a demonstration we present our experimental observation of >100% tunneling anisotropic magnetoresistance in a device with an IrMn AFM tunnel electrode [1]. We will also discuss candidate materials for high-temperature AFM semiconductor spintronics [2].[4pt] [1] B. G. Park, J.Wunderlich, X.Marti, V.Holy, Y.Kurosaki, M.Yamada, H.Yamamoto, A.Nishide, J.Hayakawa, H.Takahashi, A.B.Shick, T.Jungwirth, Nature Mat. 10, 347 (2011). [0pt] [2] T.Jungwirth, V.Nov'ak, X.Marti, M.Cukr, F.M'aca, A.B. Shick, J.Masek, P.Horodysk'a, P.Nemec, V.Hol'y, et al., Phys. Rev. B 83, 035321 (2011).

  3. Sub-200 Oe giant magnetoresistance in manganite tunnel junctions

    SciTech Connect

    Xiao, G.; Li, X.W.; Gong, G.Q.; Gupta, A.; Sun, J.Z.

    1998-12-31

    Metallic manganite oxides, La{sub 1{minus}x}D{sub x}MnO{sub 3} (D = Sr, Ca, etc.), display colossal magnetoresistance (CMR) near their magnetic phase transition temperatures ({Tc}) when subject to a Tesla-scale magnetic field. This phenomenal effect is the result of the strong interplay inherent in this class of materials among electronic structure, magnetic ordering, and lattice dynamics. Though fundamentally interesting, the CMR effect achieved only at large fields poses severe technological challenges to potential applications in magnetoelectronic devices, where low field sensitivity is crucial. Among the objectives of the research effort involving manganite materials is to reduce the field scale of MR by designing and fabricating tunnel junctions and other structures rich in magnetic domain walls. The junction electrodes were made of doped manganite epitaxial films, and the insulating barrier of SrTiO{sub 3}. The interfacial epitaxy has been imaged by using high-resolution transmission electron microscopy (TEM). The authors have used self-aligned lithographic process to pattern the junctions to micron scale in size. Large MR values close to 250% at low fields of a few tens of Oe have been observed. The mechanism of the spin-dependent transport is due to the spin-polarized tunneling between the half-metallic electrodes, in which the spins of the conduction electrons are nearly fully polarized. The authors present results of field and temperature dependence of MR in these structures and discuss the electronic structure of the manganite inferred from tunneling measurement. Results of large MR at low fields due to the grain-boundary effect is also presented.

  4. Resistivity plateau and extreme magnetoresistance in LaSb

    NASA Astrophysics Data System (ADS)

    Tafti, F. F.; Gibson, Q. D.; Kushwaha, S. K.; Haldolaarachchige, N.; Cava, R. J.

    2016-03-01

    Time reversal symmetry (TRS) protects the metallic surface modes of topological insulators (TIs). The transport signature of such surface states is a plateau that arrests the exponential divergence of the insulating bulk with decreasing temperature. This universal behaviour is observed in all TI candidates ranging from Bi2Te2Se to SmB6. Recently, extreme magnetoresistance (XMR) has been reported in several topological semimetals which exhibit TI universal resistivity behaviour only when breaking time reversal symmetry, a regime where TIs theoretically cease to exist. Among these materials, TaAs and NbP are nominated as Weyl semimetals owing to their lack of inversion symmetry, Cd3As2 is known as a Dirac semimetal owing to its linear band crossing at the Fermi level, and WTe2 is termed a resonant compensated semimetal owing to its perfect electron-hole symmetry. Here we introduce LaSb, a simple rock-salt structure material that lacks broken inversion symmetry, perfect linear band crossing, and perfect electron-hole symmetry yet exhibits all the exotic field-induced behaviours of these more complex semimetals. It shows a field-induced universal TI resistivity with a plateau at roughly 15 K, ultrahigh mobility of carriers in the plateau region, quantum oscillations with the angle dependence of a two-dimensional Fermi surface, and XMR of about one million percent at 9 T. Owing to its structural simplicity, LaSb represents an ideal model system to formulate a theoretical understanding of the exotic consequences of breaking time reversal symmetry in topological semimetals.

  5. A radiation hard vacuum switch

    DOEpatents

    Boettcher, G.E.

    1988-07-19

    A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction. 3 figs.

  6. Energy losses in switches

    SciTech Connect

    Martin, T.H.; Seamen, J.F.; Jobe, D.O.

    1993-07-01

    The authors experiments show energy losses between 2 and 10 times that of the resistive time predictions. The experiments used hydrogen, helium, air, nitrogen, SF{sub 6} polyethylene, and water for the switching dielectric. Previously underestimated switch losses have caused over predicting the accelerator outputs. Accurate estimation of these losses is now necessary for new high-efficiency pulsed power devices where the switching losses constitute the major portion of the total energy loss. They found that the switch energy losses scale as (V{sub peak}I{sub peak}){sup 1.1846}. When using this scaling, the energy losses in any of the tested dielectrics are almost the same. This relationship is valid for several orders of magnitude and suggested a theoretical basis for these results. Currents up to .65 MA, with voltages to 3 MV were applied to various gaps during these experiments. The authors data and the developed theory indicates that the switch power loss continues for a much longer time than the resistive time, with peak power loss generally occurring at peak current in a ranging discharge instead of the early current time. All of the experiments were circuit code modeled after developing a new switch loss version based on the theory. The circuit code predicts switch energy loss and peak currents as a function of time. During analysis of the data they noticed slight constant offsets between the theory and data that depended on the dielectric. They modified the plasma conductivity for each tested dielectric to lessen this offset.

  7. Giant Magnetoresistance and Microstructure of Melt-Spun Cu70Co30 Ribbons

    NASA Astrophysics Data System (ADS)

    Song, Xiao-ping; S, W. Mahon; R, F. Cochrane; B, J. Hickey; M, A. Howson

    1997-02-01

    This paper reports an investigation on the giant magnetoresistance and microstructure evolution in melt-spun Cu70Co30 alloy. The results show that the phase separation is inevitable in the course of quenching, leading to the formation of two types of fcc magnetic Co-rich particles but these do not appear to contribute to the magnetoresistance (MR). On annealing, a very fine distribution of Co-rich precipitates forms at temperatures above 573K which are responsible for the high MR developed in this material.

  8. Lab-on-chip cytometry based on magnetoresistive sensors for bacteria detection in milk.

    PubMed

    Fernandes, Ana C; Duarte, Carla M; Cardoso, Filipe A; Bexiga, Ricardo; Cardoso, Susana; Freitas, Paulo P

    2014-08-21

    Flow cytometers have been optimized for use in portable platforms, where cell separation, identification and counting can be achieved in a compact and modular format. This feature can be combined with magnetic detection, where magnetoresistive sensors can be integrated within microfluidic channels to detect magnetically labelled cells. This work describes a platform for in-flow detection of magnetically labelled cells with a magneto-resistive based cell cytometer. In particular, we present an example for the validation of the platform as a magnetic counter that identifies and quantifies Streptococcus agalactiae in milk.

  9. Temperature dependent spin transport properties of platinum inferred from spin Hall magnetoresistance measurements

    SciTech Connect

    Meyer, Sibylle Althammer, Matthias; Geprägs, Stephan; Opel, Matthias; Goennenwein, Sebastian T. B.; Gross, Rudolf

    2014-06-16

    We study the temperature dependence of the spin Hall magnetoresistance (SMR) in yttrium iron garnet/platinum hybrid structures via magnetization orientation dependent magnetoresistance measurements. Our experiments show a decrease of the SMR magnitude with decreasing temperature. Using the sensitivity of the SMR to the spin transport properties of the normal metal, we interpret our data in terms of a decrease of the spin Hall angle in platinum from 0.11 at room temperature to 0.075 at 10 K, while the spin diffusion length and the spin mixing conductance of the ferrimagnetic insulator/normal metal interface remain almost constant.

  10. Observation of linear-polarization-sensitivity in the microwave-radiation-induced magnetoresistance oscillations

    SciTech Connect

    Mani, R. G.; Ramanayaka, A. N.; Wegscheider, W.

    2013-12-04

    We examine the linear polarization sensitivity of the radiation- induced magneto-resistance oscillations by investigating the effect of rotating in-situ the electric field of linearly polarized microwaves relative to the current, in the GaAs/AlGaAs system. We find that the frequency and the phase of the photo-excited magneto-resistance oscillations are insensitive to the polarization. On the other hand, the amplitude of the resistance oscillations are strongly sensitive to the relative orientation between the microwave antenna and the current-axis in the specimen.

  11. Lab-on-Chip Cytometry Based on Magnetoresistive Sensors for Bacteria Detection in Milk

    PubMed Central

    Fernandes, Ana C.; Duarte, Carla M.; Cardoso, Filipe A.; Bexiga, Ricardo.; Cardoso, Susana.; Freitas, Paulo P.

    2014-01-01

    Flow cytometers have been optimized for use in portable platforms, where cell separation, identification and counting can be achieved in a compact and modular format. This feature can be combined with magnetic detection, where magnetoresistive sensors can be integrated within microfluidic channels to detect magnetically labelled cells. This work describes a platform for in-flow detection of magnetically labelled cells with a magneto-resistive based cell cytometer. In particular, we present an example for the validation of the platform as a magnetic counter that identifies and quantifies Streptococcus agalactiae in milk. PMID:25196163

  12. Large magnetoresistance of paracyclophane-based molecular tunnel junctions: A first-principles study

    SciTech Connect

    Tao, L. L.; Liang, S. H.; Liu, D. P.; Han, X. F.

    2013-12-07

    We report a theoretical study of magnetoresistance and spin-polarized transport of a series of paracyclophane-based molecular tunnel junctions. We predict that the molecular tunnel junction using [2.2]-paracyclophane barrier has the desired low resistance area product in combination with high magnetoresistance ratio. In addition, we find the spin-polarized conductance decreases exponentially with increasing the molecular length, indicating a nonresonant tunneling mechanism. In particular, the characteristic decay constant can be theoretically evaluated from the complex band structure of periodic paracyclophane molecule. The spin-polarized transport mechanism is systematically analyzed.

  13. Signatures of the Berry curvature in the frequency dependent interlayer magnetoresistance in tilted magnetic fields.

    PubMed

    Wright, Anthony R; McKenzie, Ross H

    2014-02-26

    We show that in a layered metal, the angle dependent, finite frequency, interlayer magnetoresistance is altered due to the presence of a non-zero Berry curvature at the Fermi surface. At zero frequency, we find a conservation law which demands that the 'magic angle' condition for interlayer magnetoresistance extrema as a function of magnetic field tilt angle is essentially both field and Berry curvature independent. In the finite frequency case, however, we find that surprisingly large signatures of a finite Berry curvature occur in the periodic orbit resonances. We outline a method whereby the presence and magnitude of the Berry curvature at the Fermi surface can be extracted.

  14. Lab-on-chip cytometry based on magnetoresistive sensors for bacteria detection in milk.

    PubMed

    Fernandes, Ana C; Duarte, Carla M; Cardoso, Filipe A; Bexiga, Ricardo; Cardoso, Susana; Freitas, Paulo P

    2014-01-01

    Flow cytometers have been optimized for use in portable platforms, where cell separation, identification and counting can be achieved in a compact and modular format. This feature can be combined with magnetic detection, where magnetoresistive sensors can be integrated within microfluidic channels to detect magnetically labelled cells. This work describes a platform for in-flow detection of magnetically labelled cells with a magneto-resistive based cell cytometer. In particular, we present an example for the validation of the platform as a magnetic counter that identifies and quantifies Streptococcus agalactiae in milk. PMID:25196163

  15. Linear polarization study of microwave-radiation-induced magnetoresistance oscillations: Comparison of power dependence to theory

    NASA Astrophysics Data System (ADS)

    Ye, Tianyu; Iñarrea, Jesús; Wegscheider, W.; Mani, R. G.

    2016-07-01

    We present an experimental study of the microwave power and the linear polarization angle dependence of the microwave-induced magnetoresistance oscillations in the high-mobility GaAs/AlGaAs two-dimensional electron system. Experimental results show the sinusoidal dependence of the oscillatory magnetoresistance extrema as a function of the polarization angle. Yet, as the microwave power increases, the angular dependence includes additional harmonic content, and it begins to resemble the absolute value of the cosine function. We present a theory to explain such peculiar behavior.

  16. Comparison of magnetoresistances of triangular and rectangular ballistic graphene npn junctions

    NASA Astrophysics Data System (ADS)

    Morikawa, Sei; Masubuchi, Satroru; Watanabe, Kenji; Taniguchi, Takashi; Machida, Tomoki

    2016-10-01

    We compared the magnetotransport properties of ballistic graphene npn junctions with two different geometries. We found that a rectangular npn junction shows a positive magnetoresistance around zero magnetic field; this finding can be explained by the suppression of Klein tunneling in a finite magnetic field. In contrast, a triangular npn junction shows a negative magnetoresistance because the transmission is enhanced in a commensurability magnetic field where the ballistic carriers in a cyclotron motion are injected perpendicularly to both the np and pn interfaces. These results suggest possibilities for manipulating ballistic carrier trajectories through the designs of local-gate geometries.

  17. The linear magnetoresistance from surface state of the Sb2SeTe2 topological insulator

    NASA Astrophysics Data System (ADS)

    Huang, Shiu-Ming; Yu, Shih-Hsun; Chou, Mitch

    2016-06-01

    A non-saturating linear magnetoresistance (MR) is observed in Sb2SeTe2 topological insulator. The results show that the MR slope and the critical magnetic field of the linear MR are proportional to the carrier mobility and inverse mobility, respectively. These are consistent with the prediction of a model, which is constructed by Parish and Littlewood [Nature 426, 162 (2003)], in the weak mobility fluctuation condition. The Kohler plot of the magnetoresistance does not collapse onto a single curve that supports the multi-carriers scattering mechanisms.

  18. Direct observation of ferroelectric domain switching in varying electric field regimes using in situ TEM.

    PubMed

    Winkler, C R; Damodaran, A R; Karthik, J; Martin, L W; Taheri, M L

    2012-11-01

    In situ Transmission Electron Microscopy (TEM) techniques can potentially fill in gaps in the current understanding interfacial phenomena in complex oxides. Select multiferroic oxide materials, such as BiFeO(3) (BFO), exhibit ferroelectric and magnetic order, and the two order parameters are coupled through a quantum-mechanical exchange interaction. The magneto-electric coupling in BFO allows control of the ferroelectric and magnetic domain structures via applied electric fields. Because of these unique properties, BFO and other magneto-electric multiferroics constitute a promising class of materials for incorporation into devices such as high-density ferroelectric and magnetoresistive memories, spin valves, and magnetic field sensors. The magneto-electric coupling in BFO is mediated by volatile ferroelastically switched domains that make it difficult to incorporate this material into devices. To facilitate device integration, an understanding of the microstructural factors that affect ferroelastic relaxation and ferroelectric domain switching must be developed. In this article, a method of viewing ferroelectric (and ferroelastic) domain dynamics using in situ biasing in TEM is presented. The evolution of ferroelastically switched ferroelectric domains in BFO thin films during many switching cycles is investigated. Evidence of partial domain nucleation, propagation, and switching even at applied electric fields below the estimated coercive field is revealed. Our observations indicate that the occurrence of ferroelastic relaxation in switched domains and the stability of these domains is influenced the applied field as well as the BFO microstructure. These biasing experiments provide a real time view of the complex dynamics of domain switching and complement scanning probe techniques. Quantitative information about domain switching under bias in ferroelectric and multiferroic materials can be extracted from in situ TEM to provide a predictive tool for future device

  19. Switching Power Universality in Unipolar Resistive Switching Memories

    PubMed Central

    Kim, Jongmin; Jung, Kyooho; Kim, Yongmin; Jo, Yongcheol; Cho, Sangeun; Woo, Hyeonseok; Lee, Seongwoo; Inamdar, A. I.; Hong, Jinpyo; Lee, Jeon-Kook; Kim, Hyungsang; Im, Hyunsik

    2016-01-01

    We investigate the resistive switching power from unipolar resistive switching current-voltage characteristics in various binary metal oxide films sandwiched by different metal electrodes, and find a universal feature (the so-called universality) in the switching power among these devices. To experimentally derive the switching power universality, systematic measurements of the switching voltage and current are performed, and neither of these correlate with one another. As the switching resistance (R) increases, the switching power (P) decreases following a power law P ∝ R−β, regardless of the device configurations. The observed switching power universality is indicative of the existence of a commonly applicable switching mechanism. The origin of the power universality is discussed based on a metallic filament model and thermo-chemical reaction. PMID:27033695

  20. Thermionic gas switch

    DOEpatents

    Hatch, G.L.; Brummond, W.A.; Barrus, D.M.

    1984-04-05

    The present invention is directed to an improved temperature responsive thermionic gas switch utilizing a hollow cathode and a folded emitter surface area. The folded emitter surface area of the thermionic switch substantially increases the on/off ratio by changing the conduction surface area involved in the two modes thereof. The improved switch of this invention provides an on/off ratio of 450:1 compared to the 10:1 ratio of the prior known thermionic switch, while providing for adjusting the on current. In the improved switch of this invention the conduction area is made small in the off mode, while in the on mode the conduction area is made large. This is achieved by utilizing a folded hollow cathode configuration and utilizing a folded emitter surface area, and by making the dimensions of the folds small enough so that a space charge will develop in the convolutions of the folds and suppress unignited current, thus limiting the current carrying surface in the off mode.

  1. Switching power pulse system

    DOEpatents

    Aaland, K.

    1983-08-09

    A switching system for delivering pulses of power from a source to a load using a storage capacitor charged through a rectifier, and maintained charged to a reference voltage level by a transistor switch and voltage comparator. A thyristor is triggered to discharge the storage capacitor through a saturable reactor and fractional turn saturable transformer having a secondary to primary turn ratio N of n:l/n = n[sup 2]. The saturable reactor functions as a soaker'' while the thyristor reaches saturation, and then switches to a low impedance state. The saturable transformer functions as a switching transformer with high impedance while a load coupling capacitor charges, and then switches to a low impedance state to dump the charge of the storage capacitor into the load through the coupling capacitor. The transformer is comprised of a multilayer core having two secondary windings tightly wound and connected in parallel to add their output voltage and reduce output inductance, and a number of single turn windings connected in parallel at nodes for the primary winding, each single turn winding linking a different one of the layers of the multilayer core. The load may be comprised of a resistive beampipe for a linear particle accelerator and capacitance of a pulse forming network. To hold off discharge of the capacitance until it is fully charged, a saturable core is provided around the resistive beampipe to isolate the beampipe from the capacitance until it is fully charged. 5 figs.

  2. Nanoscale memristive radiofrequency switches.

    PubMed

    Pi, Shuang; Ghadiri-Sadrabadi, Mohammad; Bardin, Joseph C; Xia, Qiangfei

    2015-01-01

    Radiofrequency switches are critical components in wireless communication systems and consumer electronics. Emerging devices include switches based on microelectromechanical systems and phase-change materials. However, these devices suffer from disadvantages such as large physical dimensions and high actuation voltages. Here we propose and demonstrate a nanoscale radiofrequency switch based on a memristive device. The device can be programmed with a voltage as low as 0.4 V and has an ON/OFF conductance ratio up to 10(12) with long state retention. We measure the radiofrequency performance of the switch up to 110 GHz and demonstrate low insertion loss (0.3 dB at 40 GHz), high isolation (30 dB at 40 GHz), an average cutoff frequency of 35 THz and competitive linearity and power-handling capability. Our results suggest that, in addition to their application in memory and computing, memristive devices are also a leading contender for radiofrequency switch applications. PMID:26108890

  3. Atomic Scale Plasmonic Switch.

    PubMed

    Emboras, Alexandros; Niegemann, Jens; Ma, Ping; Haffner, Christian; Pedersen, Andreas; Luisier, Mathieu; Hafner, Christian; Schimmel, Thomas; Leuthold, Juerg

    2016-01-13

    The atom sets an ultimate scaling limit to Moore's law in the electronics industry. While electronics research already explores atomic scales devices, photonics research still deals with devices at the micrometer scale. Here we demonstrate that photonic scaling, similar to electronics, is only limited by the atom. More precisely, we introduce an electrically controlled plasmonic switch operating at the atomic scale. The switch allows for fast and reproducible switching by means of the relocation of an individual or, at most, a few atoms in a plasmonic cavity. Depending on the location of the atom either of two distinct plasmonic cavity resonance states are supported. Experimental results show reversible digital optical switching with an extinction ratio of 9.2 dB and operation at room temperature up to MHz with femtojoule (fJ) power consumption for a single switch operation. This demonstration of an integrated quantum device allowing to control photons at the atomic level opens intriguing perspectives for a fully integrated and highly scalable chip platform, a platform where optics, electronics, and memory may be controlled at the single-atom level.

  4. Multiple switch actuator

    DOEpatents

    Beyer, Edward T.

    1976-01-06

    The present invention relates to switches and switch actuating devices to be operated for purposes of arming a bomb or other missile as it is dropped or released from an aircraft. The particular bomb or missile in which this invention is applied is one in which there is a plurality of circuits which are to be armed by the closing of switches upon dropping or releasing of the bomb. The operation of the switches to closed position is normally accomplished by means of a pull-out wire; that is, a wire which is withdrawn from the bomb or missile at the time of release of the bomb, one end of the wire being attached to the aircraft. The conditions to be met are that the arming switches must be positively and surely maintained in open position until the bomb is released and the arming action is effected. The action of the pull-out wire in achieving the arming action must be sure and positive with minimum danger of malfunctioning, jamming or binding.

  5. Manufacturing fuel-switching capability, 1988

    SciTech Connect

    Not Available

    1991-09-01

    Historically, about one-third of all energy consumed in the United States has been used by manufacturers. About one-quarter of manufacturing energy is used as feedstocks and raw material inputs that are converted into nonenergy products; the remainder is used for its energy content. During 1988, the most recent year for which data are available, manufacturers consumed 15.5 quadrillion British thermal units (Btu) of energy to produce heat and power and to generate electricity. The manufacturing sector also has widespread capabilities to switch from one fuel to another for either economic or emergency reasons. There are numerous ways to define fuel switching. For the purposes of the Manufacturing Energy Consumption Survey (MECS), fuel switching is defined as the capability to substitute one energy source for another within 30 days with no significant modifications to the fuel-consuming equipment, while keeping production constant. Fuel-switching capability allows manufacturers substantial flexibility in choosing their mix of energy sources. The consumption of a given energy source can be maximized if all possible switching into that energy source takes place. The estimates in this report are based on data collected on the 1988 Manufacturing Energy Consumption Survey (MECS), Forms 846 (A through C). The EIA conducts this national sample survey of manufacturing energy consumption on a triennial basis. The MECS is the only comprehensive source of national-level data on energy-related information for the manufacturing industries. The MECS was first conducted in 1986 to collect data for 1985. This report presents information on the fuel-switching capabilities of manufacturers in 1988. This report is the second of a series based on the 1988 MECS. 8 figs., 31 tabs.

  6. Microfabricated triggered vacuum switch

    DOEpatents

    Roesler, Alexander W.; Schare, Joshua M.; Bunch, Kyle

    2010-05-11

    A microfabricated vacuum switch is disclosed which includes a substrate upon which an anode, cathode and trigger electrode are located. A cover is sealed over the substrate under vacuum to complete the vacuum switch. In some embodiments of the present invention, a metal cover can be used in place of the trigger electrode on the substrate. Materials used for the vacuum switch are compatible with high vacuum, relatively high temperature processing. These materials include molybdenum, niobium, copper, tungsten, aluminum and alloys thereof for the anode and cathode. Carbon in the form of graphitic carbon, a diamond-like material, or carbon nanotubes can be used in the trigger electrode. Channels can be optionally formed in the substrate to mitigate against surface breakdown.

  7. Switching power supply

    DOEpatents

    Mihalka, A.M.

    1984-06-05

    The invention is a repratable capacitor charging, switching power supply. A ferrite transformer steps up a dc input. The transformer primary is in a full bridge configuration utilizing power MOSFETs as the bridge switches. The transformer secondary is fed into a high voltage, full wave rectifier whose output is connected directly to the energy storage capacitor. The transformer is designed to provide adequate leakage inductance to limit capacitor current. The MOSFETs are switched to the variable frequency from 20 to 50 kHz to charge a capacitor from 0.6 kV. The peak current in a transformer primary and secondary is controlled by increasing the pulse width as the capacitor charges. A digital ripple counter counts pulses and after a preselected desired number is reached an up-counter is clocked.

  8. Optical computer switching network

    NASA Technical Reports Server (NTRS)

    Clymer, B.; Collins, S. A., Jr.

    1985-01-01

    The design for an optical switching system for minicomputers that uses an optical spatial light modulator such as a Hughes liquid crystal light valve is presented. The switching system is designed to connect 80 minicomputers coupled to the switching system by optical fibers. The system has two major parts: the connection system that connects the data lines by which the computers communicate via a two-dimensional optical matrix array and the control system that controls which computers are connected. The basic system, the matrix-based connecting system, and some of the optical components to be used are described. Finally, the details of the control system are given and illustrated with a discussion of timing.

  9. SWITCH user's manual

    NASA Technical Reports Server (NTRS)

    1987-01-01

    The planning program, SWITCH, and its surrounding changed-goal-replanning program, Runaround, are described. The evolution of SWITCH and Runaround from an earlier planner, DEVISER, is recounted. SWITCH's plan representation, and its process of building a plan by backward chaining with strict chronological backtracking, are described. A guide for writing knowledge base files is provided, as are narrative guides for installing the program, running it, and interacting with it while it is running. Some utility functions are documented. For the sake of completeness, a narrative guide to the experimental discrepancy-replanning feature is provided. Appendices contain knowledge base files for a blocksworld domain, and a DRIBBLE file illustrating the output from, and user interaction with, the program in that domain.

  10. Thermionic gas switch

    DOEpatents

    Hatch, George L.; Brummond, William A.; Barrus, Donald M.

    1986-01-01

    A temperature responsive thermionic gas switch having folded electron emitting surfaces. An ionizable gas is located between the emitter and an interior surface of a collector, coaxial with the emitter. In response to the temperature exceeding a predetermined level, sufficient electrons are derived from the emitter to cause the gas in the gap between the emitter and collector to become ionized, whereby a very large increase in current in the gap occurs. Due to the folded emitter surface area of the switch, increasing the "on/off" current ratio and adjusting the "on" current capacity is accomplished.

  11. Perpendicular Resistance and Magnetoresistance of Cobalt/silver Multilayers

    NASA Astrophysics Data System (ADS)

    Lee, Shang-Fan

    The resistances of certain synthetic multilayer thin films composed of alternating layers of ferromagnetic (F) and non-magnetic (N) metals decrease significantly with increasing magnetic field--called Giant Magnetoresistance (MR). Both the F layers and the F/N interfaces serve as spin-dependent scattering sources of conduction elections, and a fundamental question involves the relative importance of bulk and interface scattering in giant MR. The MR is usually measured with the Current flowing In the layer Planes (CIP geometry). The resulting sample resistance (~eq0.01Omega ) needs only standard measuring techniques, but it is difficult to separate the bulk and interface contributions to the MR, because the currents are mixed by transmission of electrons across the interfaces. In contrast, the MR measured with the Current flowing Perpendicular to the layer Planes (CPP geometry) is harder to measure because a thin film has a small resistance (~eq 10^{-7}Omega) in the CPP geometry if it is not specially shaped with modern lithography techniques. But the separation of bulk from interface scattering should be more straightforward, since the current passes through the individual layers and interfaces sequentially. In this dissertation we show how to simultaneously measure the CPP and CIP MRs at 4K. We studied Co/Ag and Co/AgSn multilayers. The samples were made in a dc magnetron sputter deposition system with a computer controlled substrate positioning and masking apparatus. A SQUID based circuit with a high precision current comparator is used for the CPP MR measurements. We find that CPP MR > CIP MR. We also show how to analyze our CPP MR data. For Ag thicknesses 6nm and larger, and Co thicknesses 20nm and smaller, we find that a two channel series resistance model gives a good description of most of our CPP data. In this model, the spin up and spin down electrons are taken to carry current separately. A fit with no adjustable parameters showed that the resulting

  12. 35. END VIEW, INTERIOR, SHOWING SWITCHING LEVERS, BERK SWITCH TOWER, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    35. END VIEW, INTERIOR, SHOWING SWITCHING LEVERS, BERK SWITCH TOWER, SOUTH NORWALK - New York, New Haven & Hartford Railroad, Automatic Signalization System, Long Island Sound shoreline between Stamford & New Haven, Stamford, Fairfield County, CT

  13. 36. INTERIOR VIEW, BERK SWITCH TOWER, SOUTH NORWALK, SHOWING SWITCHING ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    36. INTERIOR VIEW, BERK SWITCH TOWER, SOUTH NORWALK, SHOWING SWITCHING LEVERS FROM OPERATOR'S POSITION - New York, New Haven & Hartford Railroad, Automatic Signalization System, Long Island Sound shoreline between Stamford & New Haven, Stamford, Fairfield County, CT

  14. 43. OBLIQUE VIEW, GREEN SWITCH TOWER, COS COB, SHOWING SWITCH ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    43. OBLIQUE VIEW, GREEN SWITCH TOWER, COS COB, SHOWING SWITCH LEVER ASSEMBLAGE AND DISPLAY BOARD - New York, New Haven & Hartford Railroad, Automatic Signalization System, Long Island Sound shoreline between Stamford & New Haven, Stamford, Fairfield County, CT

  15. 41. INTERIOR VIEW, GREEN SWITCH TOWER, COS COB, SHOWING SWITCH ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    41. INTERIOR VIEW, GREEN SWITCH TOWER, COS COB, SHOWING SWITCH LEVER ASSEMBLAGE AND DISPLAY BOARD - New York, New Haven & Hartford Railroad, Automatic Signalization System, Long Island Sound shoreline between Stamford & New Haven, Stamford, Fairfield County, CT

  16. Main electrical switch banks, plant switch house, looking to the ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    Main electrical switch banks, plant switch house, looking to the North - Bureau of Mines Metallurgical Research Laboratory, Original Building, Date Street north of U.S. Highway 93, Boulder City, Clark County, NV

  17. Enhancement and sign inversion of junction magnetoresistance on Mn substitution in magnetite/p-Si heterostructures

    NASA Astrophysics Data System (ADS)

    Aireddy, H.; Das, Amal K.

    2016-10-01

    Fe3-x Mn x O4/p-Si heterostructures (x  =  0, 0.25, and 0.5) were prepared using pulse laser deposition to explore their magneto-electric transport characteristics. All the heterostructures exhibit a rectifying property and junction magnetoresistance of 90% (x  =  0), 117% (x  =  0.25) and 120% (x  =  0.5) at room temperature (300 K), low bias voltage (0 to  -4 V) and low magnetic field (<1 T). Significantly, the sign (positive or negative) of junction magnetoresistance depends on the range of bias voltage for all heterostructures, but for a particular range of voltage, the sign inversion (positive to negative and vice versa) of junction magnetoresistance is observed in the heterostructure of Mn substituted Fe3O4 (Fe3-x Mn x O4) compared to the virgin (Fe3O4) one. The enhancement of junction magnetoresistance and its sign inversion upon Mn substitution in Fe3O4 are assigned to the enhancement of magnetization and the spin filtering at the junction of the heterostructures. The electronic band structure of the Fe3O4/SiO2/p-Si heterostructure and the p-type degenerate semiconducting feature of Mn-substituted Fe3-x Mn x O4 films are considered to explain the results.

  18. Detection of current-driven magnetic domains in [Co/Pd] nanowire by tunneling magnetoresistive sensor

    NASA Astrophysics Data System (ADS)

    Okuda, Mitsunobu; Miyamoto, Yasuyoshi; Miyashita, Eiichi; Saito, Nobuo; Hayashi, Naoto; Nakagawa, Shigeki

    2015-05-01

    Current-driven magnetic domain walls in magnetic nanowires have attracted a great deal of interest in terms of both physical studies and engineering applications. The anomalous Hall effect measurement is widely used for detecting the magnetization direction of current-driven magnetic domains in a magnetic nanowire. However, the problem with this measurement is that the detection point for current-driven domain wall motion is fixed at only the installed sensing wire across the specimen nanowire. A potential solution is the magnetic domain scope method, whereby the distribution of the magnetic flux leaking from the specimen can be analyzed directly by contact-scanning a tunneling magnetoresistive field sensor on a sample. In this study, we fabricated specimen nanowires consisting of [Co (0.3)/Pd (1.2)]21/Ta(3) films (units in nm) with perpendicular magnetic anisotropy on Si substrates. A tunneling magnetoresistive sensor was placed on the nanowire surface and a predetermined current pulse was applied. Real-time detection of the current-driven magnetic domain motion was successful in that the resistance of the tunneling magnetoresistive sensor was changed with the magnetization direction beneath the sensor. This demonstrates that magnetic domain detection using a tunneling magnetoresistive sensor is effective for the direct analysis of micro magnetic domain motion.

  19. Giant magnetoresistance in Co/Cu multilayers fabricated by focused ion-beam direct deposition

    NASA Astrophysics Data System (ADS)

    Nagamachi, Shinji; Ueda, Masahiro; Sakakima, Hiroshi; Satomi, Mitsuo; Ishikawa, Junzo

    1996-10-01

    We report the direct deposition of patterned multilayers that exhibit giant magnetoresistance without any lithographic processes. We fabricated Co/Cu multilayers by the focused ion-beam direct deposition method and measured the magnetoresistance characteristics of the multilayers. The fabricated Co/Cu multilayers are 14×76 μm2 in size and consist of 12 layers of Co thin film with the thickness of 20 Å and 11 layers of Cu thin film with the thickness of 13-22 Å on the GaAs substrate. We used a 108 eV Co2+ ion beam and 54 eV Cu+ ion beam extracted from a Co-Cu-Au-Nb alloy ion source. The measured magnetoresistance ratio of giant magnetoresistance was 6.7% in the case of the Co(20 Å)/Cu(21 Å) multilayer. Experimental results show precise controllability of the thickness and the additional capability of the focused ion-beam direct deposition method.

  20. Hybrid Molecular and Spin Dynamics Simulations for Ensembles of Magnetic Nanoparticles for Magnetoresistive Systems

    PubMed Central

    Teich, Lisa; Schröder, Christian

    2015-01-01

    The development of magnetoresistive sensors based on magnetic nanoparticles which are immersed in conductive gel matrices requires detailed information about the corresponding magnetoresistive properties in order to obtain optimal sensor sensitivities. Here, crucial parameters are the particle concentration, the viscosity of the gel matrix and the particle structure. Experimentally, it is not possible to obtain detailed information about the magnetic microstructure, i.e., orientations of the magnetic moments of the particles that define the magnetoresistive properties, however, by using numerical simulations one can study the magnetic microstructure theoretically, although this requires performing classical spin dynamics and molecular dynamics simulations simultaneously. Here, we present such an approach which allows us to calculate the orientation and the trajectory of every single magnetic nanoparticle. This enables us to study not only the static magnetic microstructure, but also the dynamics of the structuring process in the gel matrix itself. With our hybrid approach, arbitrary sensor configurations can be investigated and their magnetoresistive properties can be optimized. PMID:26580623