Arc voltage distribution skewness as an indicator of electrode gap during vacuum arc remelting

DOEpatents

Williamson, R.L.; Zanner, F.J.; Grose, S.M.

1998-01-13

The electrode gap of a VAR is monitored by determining the skewness of a distribution of gap voltage measurements. A decrease in skewness indicates an increase in gap and may be used to control the gap. 4 figs.

Constant voltage electro-slag remelting control

DOEpatents

Schlienger, Max E.

1996-01-01

A system for controlling electrode gap in an electro-slag remelt furnace has a constant regulated voltage and an eletrode which is fed into the slag pool at a constant rate. The impedance of the circuit through the slag pool is directly proportional to the gap distance. Because of the constant voltage, the system current changes are inversely proportional to changes in gap. This negative feedback causes the gap to remain stable.

Gas Breakdown in the Sub-Nanosecond Regime with Voltages Below 15 KV

DTIC Science & Technology

2013-06-01

needle -plane gap with outer coaxial conductor, and a 50-Ω load line. The needle consists of tungsten and has a radius of curvature below 0.5 µm. The...here gas breakdown during nanosecond pulses occurs mainly as corona discharges on wire antennas, and represents an unwanted effect - General...risetime between 400 ps to1 ns), 50-W transmission line, axial needle -plane gap with outer coaxial conductor, and a 50-W load line. The needle consists of

Constant voltage electro-slag remelting control

DOEpatents

Schlienger, M.E.

1996-10-22

A system for controlling electrode gap in an electro-slag remelt furnace has a constant regulated voltage and an electrode which is fed into the slag pool at a constant rate. The impedance of the circuit through the slag pool is directly proportional to the gap distance. Because of the constant voltage, the system current changes are inversely proportional to changes in gap. This negative feedback causes the gap to remain stable. 1 fig.

Voltage-Controlled Switching and Thermal Effects in VO2 Nano-Gap Junctions

DTIC Science & Technology

2014-06-09

Voltage-controlled switching and thermal effects in VO2 nano-gap junctions Arash Joushaghani,1 Junho Jeong,1 Suzanne Paradis,2 David Alain,2 J...2014) Voltage-controlled switching in lateral VO2 nano-gap junctions with different gap lengths and thermal properties was investigated. The effect of...indicate that the VO2 phase transition was likely initiated electroni- cally, which was sometimes followed by a secondary thermally-induced transition

Experimental verification of the capillary plasma triggered long spark gap under the extremely low working coefficient in air

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, D.; Yang, L. J., E-mail: yanglj@mail.xjtu.edu.cn; Ma, J. B.

The paper has proposed a new triggering method for long spark gap based on capillary plasma ejection and conducted the experimental verification under the extremely low working coefficient, which represents that the ratio of the spark gap charging voltage to the breakdown voltage is particularly low. The quasi-neutral plasma is ejected from the capillary and develops through the axial direction of the spark gap. The electric field in the spark gap is thus changed and its breakdown is incurred. It is proved by the experiments that the capillary plasma ejection is effective in triggering the long spark gap under themore » extremely low working coefficient in air. The study also indicates that the breakdown probabilities, the breakdown delay, and the delay dispersion are all mainly determined by the characteristics of the ejected plasma, including the length of the plasma flow, the speed of the plasma ejection, and the ionization degree of the plasma. Moreover, the breakdown delay and the delay dispersion increase with the length of the long spark gap, and the polarity effect exists in the triggering process. Lastly, compared with the working patterns of the triggering device installed in the single electrode, the working pattern of the devices installed in both the two electrodes, though with the same breakdown process, achieves the ignition under longer gap distance. To be specific, at the gap length of 14 cm and the working coefficient of less than 2%, the spark gap is still ignited accurately.« less

Association Between Local Bipolar Voltage and Conduction Gap Along the Left Atrial Linear Ablation Lesion in Patients With Atrial Fibrillation.

PubMed

Masuda, Masaharu; Fujita, Masashi; Iida, Osamu; Okamoto, Shin; Ishihara, Takayuki; Nanto, Kiyonori; Kanda, Takashi; Sunaga, Akihiro; Tsujimura, Takuya; Matsuda, Yasuhiro; Mano, Toshiaki

2017-08-01

A bipolar voltage reflects a thick musculature where formation of a transmural lesion may be hard to achieve. The purpose of this study was to explore the association between local bipolar voltage and conduction gap in patients with persistent atrial fibrillation (AF) who underwent atrial roof or septal linear ablation. This prospective observational study included 42 and 36 consecutive patients with persistent AF who underwent roof or septal linear ablations, respectively. After pulmonary vein isolation, left atrial linear ablations were performed, and conduction gap sites were identified and ablated after first-touch radiofrequency application. Conduction gap(s) after the first-touch roof and septal linear ablation were observed in 13 (32%) and 19 patients (53%), respectively. Roof and septal area voltages were higher in patients with conduction gap(s) than in those without (roof, 1.23 ± 0.77 vs 0.73 ± 0.42 mV, p = 0.010; septal, 0.96 ± 0.43 vs 0.54 ± 0.18 mV, p = 0.001). Trisected regional analyses revealed that the voltage was higher at the region with a conduction gap than at the region without. Complete conduction block across the roof and septal lines was not achieved in 3 (7%) and 6 patients (17%), respectively. Patients in whom a linear conduction block could not be achieved demonstrated higher ablation area voltage than those with a successful conduction block (roof, 1.91 ± 0.74 vs 0.81 ± 0.51 mV, p = 0.001; septal, 1.15 ± 0.56 vs 0.69 ± 0.31 mV, p = 0.006). In conclusion, a high regional bipolar voltage predicts failure to achieve conduction block after left atrial roof or septal linear ablation. In addition, the conduction gap was located at the preserved voltage area. Copyright © 2017 Elsevier Inc. All rights reserved.

A high-current rail-type gas switch with preionization by an additional corona discharge

NASA Astrophysics Data System (ADS)

Antipov, E. I.; Belozerov, O. S.; Krastelev, E. G.

2016-12-01

The characteristics of a high-current rail-type gas switch with preionization of the gas (air) in a spark gap by an additional corona discharge are investigated. The experiments were performed in a voltage range of 10-45 kV using a two-electrode switch consisting of two cylindrical electrodes with a diameter of 22 mm and a length of 100 mm and a set of laterally located corona-discharge needles. The requirements for the position and size of the needles are defined for which a corona discharge is ignited before a breakdown of the main gap and does not change to a sparking form, and the entire length of the rail electrodes is efficiently used. The fulfillment of these requirements ensures stable operation of the switch with a small variation of the pulse breakdown voltage, which is not more than 1% for a fixed voltage-pulse rise time in the range from 150 ns to 3.5 μs. A short delay time of the switch breakdown makes it possible to control the two-electrode switch by an overvoltage pulse of nanosecond duration.

Influence of temperature on the ionization coefficient and ignition voltage of the Townsend discharge in an argon-mercury vapor mixture

NASA Astrophysics Data System (ADS)

Bondarenko, G. G.; Fisher, M. R.; Kristya, V. I.

2017-02-01

The kinetics of main types of charged and excited particles present in a low-current discharge in an argon-mercury vapor mixture used in gas-discharge illuminating lamps has been investigated in a wide interval of the reduced electric field strength and temperature. Mechanisms behind the production and loss of ions and metastable atoms have been discovered, and the temperature dependences of their contributions to maintaining their balance have been determined. It has been shown that, when the discharge is initiated in the lamp and the mercury content in the mixture is low, the ionization coefficient exceeds that in pure argon, which is almost exclusively due to the Penning reaction. The influence of this reaction grows with a reduction of the electric field strength in the interelectrode gap. The dependences of the discharge ignition voltage on the interelectrode gap (Paschen curves) for different temperatures of the mixture have been calculated, and the nonmonotonicity of the temperature dependence of the ignition voltage has been explained.

Breakdown voltage determination of gaseous and near cryogenic fluids with application to rocket engine ignition

NASA Astrophysics Data System (ADS)

Nugent, Nicholas Jeremy

Liquid rocket engines extensively use spark-initiated torch igniters for ignition. As the focus shifts to longer missions that require multiple starts of the main engines, there exists a need to solve the significant problems associated with using spark-initiated devices. Improving the fundamental understanding of predicting the required breakdown voltage in rocket environments along with reducing electrical noise is necessary to ensure that missions can be completed successfully. To better understand spark ignition systems and add to the fundamental research on spark development in rocket applications, several parameter categories of interest were hypothesized to affect breakdown voltage: (i) fluid, (ii) electrode, and (iii) electrical. The fluid properties varied were pressure, temperature, density and mass flow rate. Electrode materials, insert electrode angle and spark gap distance were the electrode properties varied. Polarity was the electrical property investigated. Testing how breakdown voltage is affected by each parameter was conducted using three different isolated insert electrodes fabricated from copper and nickel. A spark plug commonly used in torch igniters was the other electrode. A continuous output power source connected to a large impedance source and capacitance provided the pulsing potential. Temperature, pressure and high voltage measurements were recorded for the 418 tests that were successfully completed. Nitrogen, being inert and similar to oxygen, a propellant widely used in torch igniters, was used as the fluid for the majority of testing. There were 68 tests completed with oxygen and 45 with helium. A regression of the nitrogen data produced a correction coefficient to Paschen's Law that predicts the breakdown voltage to within 3000 volts, better than 20%, compared to an over prediction on the order of 100,000 volts using Paschen's Law. The correction coefficient is based on the parameters most influencing breakdown voltage: fluid density, spark gap distance, electrode angles, electrode materials and polarity. The research added to the fundamental knowledge of spark development in rocket ignition applications by determining the parameters that most influence breakdown voltage. Some improvements to the research should include better temperature measurements near the spark gap, additional testing with oxygen and testing with fuels of interest such as hydrogen and methane.

Two-dimensional simulation of argon dielectric barrier discharge excited by a Gaussian voltage at atmospheric pressure

NASA Astrophysics Data System (ADS)

Xu, Yonggang; Wang, Jing; Li, Jing; Lei, Bingying; Tang, Jie; Wang, Yishan; Li, Yongfang; Zhao, Wei; Duan, Yixiang

2017-04-01

A two-dimensional self-consistent fluid model was employed to investigate the spatiotemporal characteristics of discharges in atmospheric pressure argon (Ar) dielectric barrier discharge driven by a Gaussian voltage. The simulation results show that a discharge with multiple current pulses occurs each half-cycle in the gas gap. A transition from the Townsend mode to the glow mode is observed with the increasing applied voltage each half-cycle at a lower driving frequency (7.5 kHz). It is also found that the glow mode survives all the discharge phases at a higher driving frequency (12.5 kHz and 40 kHz). The change in the discharge mode with the driving frequency mainly lies in the fact that a lot of charged particles created in the discharge gap have no enough time to drift and diffuse around, and then these particles are assembled in the discharge space at higher frequency. Additionally, the spatial distributions of the electron density indicate that a center-advantage discharge is ignited at the driving frequencies of interest, resulting in the radial non-uniformity of discharge because of the edge effects. However, this overall non-uniformity is weakened with the driving frequency increased to 40 kHz, at which concentric ring patterns are observed. These distinct behaviors are mainly attributed to the fact that many charged particles generated are trapped in the gas gap and then accumulated to make the extension along the radial direction due to the charged particles transport and diffusion, and that the effective overlapping of a large number of avalanches induced by the increased "seed" electron density with the driving frequency. Meanwhile, the surface charged particles accumulated on the dielectric barriers are also shown to play a role in the formation of the discharge structure.

Particle-in-cell modeling of the nanosecond field emission driven discharge in pressurized hydrogen

NASA Astrophysics Data System (ADS)

Levko, Dmitry; Yatom, Shurik; Krasik, Yakov E.

2018-02-01

The high-voltage field-emission driven nanosecond discharge in pressurized hydrogen is studied using the one-dimensional Particle-in-Cell Monte Carlo collision model. It is obtained that the main part of the field-emitted electrons becomes runaway in the thin cathode sheath. These runaway electrons propagate the entire cathode-anode gap, creating rather dense (˜1012 cm-3) seeding plasma electrons. In addition, these electrons initiate a streamer propagating through this background plasma with a speed ˜30% of the speed of light. Such a high streamer speed allows the self-acceleration mechanism of runaway electrons present between the streamer head and the anode to be realized. As a consequence, the energy of runaway electrons exceeds the cathode-anode gap voltage. In addition, the influence of the field emission switching-off time is analyzed. It is obtained that this time significantly influences the discharge dynamics.

A compact, low jitter, nanosecond rise time, high voltage pulse generator with variable amplitude.

PubMed

Mao, Jiubing; Wang, Xin; Tang, Dan; Lv, Huayi; Li, Chengxin; Shao, Yanhua; Qin, Lan

2012-07-01

In this paper, a compact, low jitter, nanosecond rise time, command triggered, high peak power, gas-switch pulse generator system is developed for high energy physics experiment. The main components of the system are a high voltage capacitor, the spark gap switch and R = 50 Ω load resistance built into a structure to obtain a fast high power pulse. The pulse drive unit, comprised of a vacuum planar triode and a stack of avalanche transistors, is command triggered by a single or multiple TTL (transistor-transistor logic) level pulses generated by a trigger pulse control unit implemented using the 555 timer circuit. The control unit also accepts user input TTL trigger signal. The vacuum planar triode in the pulse driving unit that close the first stage switches is applied to drive the spark gap reducing jitter. By adjusting the charge voltage of a high voltage capacitor charging power supply, the pulse amplitude varies from 5 kV to 10 kV, with a rise time of <3 ns and the maximum peak current up to 200 A (into 50 Ω). The jitter of the pulse generator system is less than 1 ns. The maximum pulse repetition rate is set at 10 Hz that limited only by the gas-switch and available capacitor recovery time.

Experimental investigations of argon spark gap recovery times by developing a high voltage double pulse generator.

PubMed

Reddy, C S; Patel, A S; Naresh, P; Sharma, Archana; Mittal, K C

2014-06-01

The voltage recovery in a spark gap for repetitive switching has been a long research interest. A two-pulse technique is used to determine the voltage recovery times of gas spark gap switch with argon gas. First pulse is applied to the spark gap to over-volt the gap and initiate the breakdown and second pulse is used to determine the recovery voltage of the gap. A pulse transformer based double pulse generator capable of generating 40 kV peak pulses with rise time of 300 ns and 1.5 μs FWHM and with a delay of 10 μs-1 s was developed. A matrix transformer topology is used to get fast rise times by reducing L(l)C(d) product in the circuit. Recovery Experiments have been conducted for 2 mm, 3 mm, and 4 mm gap length with 0-2 bars pressure for argon gas. Electrodes of a sparkgap chamber are of rogowsky profile type, made up of stainless steel material, and thickness of 15 mm are used in the recovery study. The variation in the distance and pressure effects the recovery rate of the spark gap. An intermediate plateu is observed in the spark gap recovery curves. Recovery time decreases with increase in pressure and shorter gaps in length are recovering faster than longer gaps.

A voltage-division-type low-jitter self-triggered repetition-rate switch.

PubMed

Su, Jian-Cang; Zeng, Bo; Gao, Peng-Cheng; Li, Rui; Wu, Xiao-Long; Zhao, Liang

2016-10-01

A voltage-division-type (V/N) low-jitter self-triggered multi-stage switch is put forward. It comprises of a triggered corona gap, several quasi-uniform-field gaps, and an inversion inductor. When the corona gap is in the stage of self-breakdown, the multi-stage gaps are triggered and the switch is closed via an over-voltage. This type of V/N switch has the advantage of compact structure since the auxiliary components like the gas-blowing system and the triggered system are eliminated from the whole system. It also has advantages such as low breakdown jitter and high energy efficiency. The dependence of the self-triggered voltage on the over-voltage factor and the switch operating voltage is deduced. A switch of this type is designed and fabricated and experiments to research its characteristics are conducted. The results show that this switch can operate on a voltage of 1 MV at 50 Hz and can generate 1000 successive pulses with a jitter as low as 3% and an energy efficiency as high as 90%. This V/N switch can work under a high repetition rate with a long lifetime.

Ephaptic coupling rescues conduction failure in weakly coupled cardiac tissue with voltage-gated gap junctions

NASA Astrophysics Data System (ADS)

Weinberg, S. H.

2017-09-01

Electrical conduction in cardiac tissue is usually considered to be primarily facilitated by gap junctions, providing a pathway between the intracellular spaces of neighboring cells. However, recent studies have highlighted the role of coupling via extracellular electric fields, also known as ephaptic coupling, particularly in the setting of reduced gap junction expression. Further, in the setting of reduced gap junctional coupling, voltage-dependent gating of gap junctions, an oft-neglected biophysical property in computational studies, produces a positive feedback that promotes conduction failure. We hypothesized that ephaptic coupling can break the positive feedback loop and rescue conduction failure in weakly coupled cardiac tissue. In a computational tissue model incorporating voltage-gated gap junctions and ephaptic coupling, we demonstrate that ephaptic coupling can rescue conduction failure in weakly coupled tissue. Further, ephaptic coupling increased conduction velocity in weakly coupled tissue, and importantly, reduced the minimum gap junctional coupling necessary for conduction, most prominently at fast pacing rates. Finally, we find that, although neglecting gap junction voltage-gating results in negligible differences in well coupled tissue, more significant differences occur in weakly coupled tissue, greatly underestimating the minimal gap junctional coupling that can maintain conduction. Our study suggests that ephaptic coupling plays a conduction-preserving role, particularly at rapid heart rates.

Optimization of the performance of a tandem microchannel plate detector as a function of interplate spacing and voltage

NASA Technical Reports Server (NTRS)

Rogers, D.; Malina, R. F.

1982-01-01

The effect of varying the size of the gap voltage and spacing on the performance of a tandem pair of microchannel plates (MCP) is investigated. Results show that increasing the voltage in the gap increases the gain of the pair and also produces a narrower Gaussian pulse-height distribution, although beyond a critical voltage the gain of the channel plate pair is found to plateau. A model is developed which explains the nonlinear gain behavior of individual microchannels and the behavior of the electron cloud emitted from the first MCP as it spreads out between the two MCPs and hits the surface of the second. The model calculates the plateau voltage as a function of the gap size, the gain of each MCP, and the diameter of the channels, and is found to show good agreement with the observed results. It is concluded that interplate gaps of up to several millimeters can be accommodated without a significant degradation in pulse-height distribution.

Effect of electrical coupling on ionic current and synaptic potential measurements.

PubMed

Rabbah, Pascale; Golowasch, Jorge; Nadim, Farzan

2005-07-01

Recent studies have found electrical coupling to be more ubiquitous than previously thought, and coupling through gap junctions is known to play a crucial role in neuronal function and network output. In particular, current spread through gap junctions may affect the activation of voltage-dependent conductances as well as chemical synaptic release. Using voltage-clamp recordings of two strongly electrically coupled neurons of the lobster stomatogastric ganglion and conductance-based models of these neurons, we identified effects of electrical coupling on the measurement of leak and voltage-gated outward currents, as well as synaptic potentials. Experimental measurements showed that both leak and voltage-gated outward currents are recruited by gap junctions from neurons coupled to the clamped cell. Nevertheless, in spite of the strong coupling between these neurons, the errors made in estimating voltage-gated conductance parameters were relatively minor (<10%). Thus in many cases isolation of coupled neurons may not be required if a small degree of measurement error of the voltage-gated currents or the synaptic potentials is acceptable. Modeling results show, however, that such errors may be as high as 20% if the gap-junction position is near the recording site or as high as 90% when measuring smaller voltage-gated ionic currents. Paradoxically, improved space clamp increases the errors arising from electrical coupling because voltage control across gap junctions is poor for even the highest realistic coupling conductances. Furthermore, the common procedure of leak subtraction can add an extra error to the conductance measurement, the sign of which depends on the maximal conductance.

Effect of actuating voltage and discharge gap on plasma assisted detonation initiation process

NASA Astrophysics Data System (ADS)

Siyin, ZHOU; Xueke, CHE; Wansheng, NIE; Di, WANG

2018-06-01

The influence of actuating voltage and discharge gap on plasma assisted detonation initiation by alternating current dielectric barrier discharge was studied in detail. A loose coupling method was used to simulate the detonation initiation process of a hydrogen–oxygen mixture in a detonation tube under different actuating voltage amplitudes and discharge gap sizes. Both the discharge products and the detonation forming process assisted by the plasma were analyzed. It was found that the patterns of the temporal and spatial distributions of discharge products in one cycle keep unchanged as changing the two discharge operating parameters. However, the adoption of a higher actuating voltage leads to a higher active species concentration within the discharge zone, and atom H is the most sensitive to the variations of the actuating voltage amplitude among the given species. Adopting a larger discharge gap results in a lower concentration of the active species, and all species have the same sensitivity to the variations of the gap. With respect to the reaction flow of the detonation tube, the corresponding deflagration to detonation transition (DDT) time and distance become slightly longer when a higher actuating voltage is chosen. The acceleration effect of plasma is more prominent with a smaller discharge gap, and the benefit builds gradually throughout the DDT process. Generally, these two control parameters have little effect on the amplitude of the flow field parameters, and they do not alter the combustion degree within the reaction zone.

A high-current rail-type gas switch with preionization by an additional corona discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Antipov, E. I.; Belozerov, O. S.; Krastelev, E. G., E-mail: ekrastelev@yandex.ru

The characteristics of a high-current rail-type gas switch with preionization of the gas (air) in a spark gap by an additional corona discharge are investigated. The experiments were performed in a voltage range of 10–45 kV using a two-electrode switch consisting of two cylindrical electrodes with a diameter of 22 mm and a length of 100 mm and a set of laterally located corona-discharge needles. The requirements for the position and size of the needles are defined for which a corona discharge is ignited before a breakdown of the main gap and does not change to a sparking form, andmore » the entire length of the rail electrodes is efficiently used. The fulfillment of these requirements ensures stable operation of the switch with a small variation of the pulse breakdown voltage, which is not more than 1% for a fixed voltage-pulse rise time in the range from 150 ns to 3.5 μs. A short delay time of the switch breakdown makes it possible to control the two-electrode switch by an overvoltage pulse of nanosecond duration.« less

An analog RF gap voltage regulation system for the Advanced Photon Source storage ring.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Horan, D.

1999-04-13

An analog rf gap voltage regulation system has been designed and built at Argonne National Laboratory to maintain constant total storage ring rf gap voltage, independent of beam loading and cavity tuning effects. The design uses feedback control of the klystron mod-anode voltage to vary the amount of rf power fed to the storage ring cavities. The system consists of two independent feedback loops, each regulating the combined rf gap voltages of eight storage ring cavities by varying the output power of either one or two rf stations, depending on the mode of operation. It provides full operator control andmore » permissive logic to permit feedback control of the rf system output power only if proper conditions are met. The feedback system uses envelope-detected cavity field probe outputs as the feedback signal. Two different methods of combining the individual field probe signals were used to generate a relative DC level representing one-half of the total storage ring rf voltage, an envelope-detected vector sum of the field probe rf signals, and the DC sum of individual field probe envelope detector outputs. The merits of both methods are discussed. The klystron high-voltage power supply (HVPS) units are fitted with an analog interface for external control of the mod-anode voltage level, using a four-quadrant analog multiplier to modulate the HVPS mod-anode voltage regulator set-point in response to feedback system commands.« less

Effect of electrode gap on the sensing properties of multiwalled carbon nanotubes based gas sensor

NASA Astrophysics Data System (ADS)

Saheed, Mohamed Shuaib Mohamed; Mohamed, Norani Muti; Burhanudin, Zainal Arif

2016-11-01

Vertically aligned multiwalled carbon nanotubes (MWCNT) were grown on Si substrate coated with alumina and iron using chemical vapor deposition. Electrode gap of 10, 25 and 50 µm were adopted to determine the effect of varying gap spacing on the sensing properties such as voltage breakdown, sensitivity and selectivity for three gases namely argon, carbon dioxide and ammonia. Argon has the lowest voltage breakdown for every electrode gap. The fabricated MWCNT based gas sensor drastically reduced the voltage breakdown by 89.5% when the electrode spacing is reduced from 50 µm to 10 µm. The reduction is attributed to the high non-uniform electric field between the electrodes caused by the protrusion of nanotips. The sensor shows good sensitivity and selectivity with the ability to detect the gas in the mixture with air provided that the concentration is ≥ 20% where the voltage breakdown will be close to the pure gas.

Technique for enhancing the power output of an electrostatic generator employing parametric resonance

DOEpatents

Post, Richard F.

2016-02-23

A circuit-based technique enhances the power output of electrostatic generators employing an array of axially oriented rods or tubes or azimuthal corrugated metal surfaces for their electrodes. During generator operation, the peak voltage across the electrodes occurs at an azimuthal position that is intermediate between the position of minimum gap and maximum gap. If this position is also close to the azimuthal angle where the rate of change of capacity is a maximum, then the highest rf power output possible for a given maximum allowable voltage at the minimum gap can be attained. This rf power output is then coupled to the generator load through a coupling condenser that prevents suppression of the dc charging potential by conduction through the load. Optimized circuit values produce phase shifts in the rf output voltage that allow higher power output to occur at the same voltage limit at the minimum gap position.

Tunneling barrier in nanoparticle junctions of La2/3(Ca,Sr)1/3MnO3: Nonlinear current-voltage characteristics

NASA Astrophysics Data System (ADS)

Niebieskikwiat, D.; Sánchez, R. D.; Lamas, D. G.; Caneiro, A.; Hueso, L. E.; Rivas, J.

2003-05-01

We study the nonlinear current-voltage (I-V) characteristics and analyze the voltage-dependent tunneling conductance in nanoparticles of La2/3A1/3MnO3 (A=Ca, Sr). The powders were prepared by different wet-chemical routes and low calcination temperatures were used to obtain an average particle size D≈30 nm. The data are comprehensively explained in terms of the tunneling picture, which allows one to estimate the height of the grain boundary insulating barrier (φ) for each sample. For constant D, our results show that the sample preparation route is mainly responsible for the value of φ in nanoparticles, while the Coulomb gap in the Coulomb blockade regime is ˜3 times higher for Sr- than for Ca-doping. We also show that a small fraction of the barriers contribute to the nonlinear transport, and the current is mainly carried through low-resistive percolated paths. In addition, despite the different barrier strengths, the low-field magnetoresistance (LFMR) is similar for all samples, implying that φ is not the fundamental parameter determining the LFMR.

Characteristics of long-gap AC streamer discharges under low pressure conditions

NASA Astrophysics Data System (ADS)

Yang, Yaqi; Li, Weiguo; Xia, Yu; Yuan, Chuangye

2017-10-01

The generation and propagation of a streamer is a significant physical process of air gap discharge. Research on the mechanism of streamers under low-pressure conditions is helpful for understanding the process of long-gap discharge in a high-altitude area. This paper describes laboratory investigations of streamer discharge under alternating current (AC) voltage in a low pressure test platform for a 60 cm rod-plane gap at 30 kPa, and analyzes the characteristics of streamer generation and propagation. The results show that the partial streamer and breakdown streamer all occur in the positive half-cycle of AC voltage near the peak voltage at 30 kPa. The partial streamer could cause the distortion of current and voltage waveform, and it appears as the branching characteristic at the initial stage. With the extension of the streamer, the branching and tortuosity phenomena become gradually obvious, but the branching is suppressed when the streamer crosses the gap. The low-pressure condition has little influence on the tortuosity length and the tortuosity number of the streamer, but affect the diameter of streamer obviously.

Experimental test of whether electrostatically charged micro-organisms and their spores contribute to the onset of arcs across vacuum gaps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grisham, L. R.; Halle, A. von; Carpe, A. F.

2013-12-15

Recently it was proposed [L. R. Grisham et al. Phys. Plasmas 19, 023107 (2012)] that one of the initiators of vacuum voltage breakdown between conducting electrodes might be micro-organisms and their spores, previously deposited during exposure to air, which then become electrostatically charged when an electric potential is applied across the vacuum gap. This note describes a simple experiment to compare the number of voltage-conditioning pulses required to reach the nominal maximum operating voltage across a gap between two metallic conductors in a vacuum, comparing cases in which biological cleaning was done just prior to pump-down with cases where thismore » was not done, with each case preceded by exposure to ambient air for three days. Based upon these results, it does not appear that air-deposited microbes and their spores constitute a major pathway for arc initiation, at least for exposure periods of a few days, and for vacuum gaps of a few millimeters, in the regime where voltage holding is usually observed to vary linearly with gap distance.« less

Virtual gap dielectric wall accelerator

DOEpatents

Caporaso, George James; Chen, Yu-Jiuan; Nelson, Scott; Sullivan, Jim; Hawkins, Steven A

2013-11-05

A virtual, moving accelerating gap is formed along an insulating tube in a dielectric wall accelerator (DWA) by locally controlling the conductivity of the tube. Localized voltage concentration is thus achieved by sequential activation of a variable resistive tube or stalk down the axis of an inductive voltage adder, producing a "virtual" traveling wave along the tube. The tube conductivity can be controlled at a desired location, which can be moved at a desired rate, by light illumination, or by photoconductive switches, or by other means. As a result, an impressed voltage along the tube appears predominantly over a local region, the virtual gap. By making the length of the tube large in comparison to the virtual gap length, the effective gain of the accelerator can be made very large.

Post-breakdown secondary discharges at the electrode/dielectric interface of a cylindrical barrier discharge

NASA Astrophysics Data System (ADS)

Carman, Robert; Ward, Barry; Kane, Deborah

2011-10-01

The electrical breakdown characteristics of a double-walled cylindrical dielectric barrier discharge (DBD) lamp with a neon buffer gas under pulsed voltage excitation have been investigated. Following the formation of plasma in the main discharge gap, we have observed secondary breakdown phenomena at the inner and outer mesh electrode/dielectric interfaces under specific operating conditions. Plasma formation at these interfaces is investigated by monitoring the Ozone production rate in controlled flows of ultra high purity oxygen together with the overall electrical voltage-charge characteristics of the lamp. The results show that this secondary breakdown only occurs after the main discharge plasma has been established, and that significant electrical power may be dissipated in generating these spurious secondary plasmas. The results are important with regards to optimising the design and identifying efficient operating regimes of DBD based devices that employ mesh-type or wire/strip electrodes.

Band-gap tunable dielectric elastomer filter for low frequency noise

NASA Astrophysics Data System (ADS)

Jia, Kun; Wang, Mian; Lu, Tongqing; Zhang, Jinhua; Wang, Tiejun

2016-05-01

In the last decades, diverse materials and technologies for sound insulation have been widely applied in engineering. However, suppressing the noise radiation at low frequency still remains a challenge. In this work, a novel membrane-type smart filter, consisting of a pre-stretched dielectric elastomer membrane with two compliant electrodes coated on the both sides, is presented to control the low frequency noise. Since the stiffness of membrane dominates its acoustic properties, sound transmission band-gap of the membrane filter can be tuned by adjusting the voltage applied to the membrane. The impedance tube experiments have been carried out to measure the sound transmission loss (STL) of the filters with different electrodes, membrane thickness and pre-stretch conditions. The experimental results show that the center frequency of sound transmission band-gap mainly depends on the stress in the dielectric elastomer, and a large band-gap shift (more than 60 Hz) can be achieved by tuning the voltage applied to the 85 mm diameter VHB4910 specimen with pre-stretch {λ }0=3. Based on the experimental results and the assumption that applied electric field is independent of the membrane behavior, 3D finite element analysis has also been conducted to calculate the membrane stress variation. The sound filter proposed herein may provide a promising facility to control low frequency noise source with tonal characteristics.

Phase locking of an S-band wide-gap klystron amplifier with high power injection driven by a relativistic backward wave oscillator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bai Xianchen; Zhang Jiande; Yang Jianhua

2012-12-15

Theoretical analyses and preliminary experiments on the phase-locking characteristics of an inductively loaded 2-cavity wide-gap klystron amplifier (WKA) with high power injection driven by a GW-class relativistic backward wave oscillator (RBWO) are presented. Electric power of the amplifier and oscillator is supplied by a single accelerator being capable of producing dual electron beams. The well phase-locking effect of the RBWO-WKA system requires the oscillator have good frequency reproducibility and stability from pulse to pulse. Thus, the main switch of the accelerator is externally triggered to stabilize the diode voltage and then the working frequency. In the experiment, frequency of themore » WKA is linearly locked by the RBWO. With a diode voltage of 530 kV and an input power of {approx}22 MW, an output power of {approx}230 MW with the power gain of {approx}10.2 dB is obtained from the WKA. As the main switch is triggered, the relative phase difference between the RBWO and the WKA is less than {+-}15 Degree-Sign in a single shot, and phase jitter of {+-}11 Degree-Sign is obtained within a series of shots with duration of about 40 ns.« less

Phase locking of an S-band wide-gap klystron amplifier with high power injection driven by a relativistic backward wave oscillator

NASA Astrophysics Data System (ADS)

Bai, Xianchen; Zhang, Jiande; Yang, Jianhua; Jin, Zhenxing

2012-12-01

Theoretical analyses and preliminary experiments on the phase-locking characteristics of an inductively loaded 2-cavity wide-gap klystron amplifier (WKA) with high power injection driven by a GW-class relativistic backward wave oscillator (RBWO) are presented. Electric power of the amplifier and oscillator is supplied by a single accelerator being capable of producing dual electron beams. The well phase-locking effect of the RBWO-WKA system requires the oscillator have good frequency reproducibility and stability from pulse to pulse. Thus, the main switch of the accelerator is externally triggered to stabilize the diode voltage and then the working frequency. In the experiment, frequency of the WKA is linearly locked by the RBWO. With a diode voltage of 530 kV and an input power of ˜22 MW, an output power of ˜230 MW with the power gain of ˜10.2 dB is obtained from the WKA. As the main switch is triggered, the relative phase difference between the RBWO and the WKA is less than ±15° in a single shot, and phase jitter of ±11° is obtained within a series of shots with duration of about 40 ns.

The effect of electrode temperature on the sparking voltage of short spark gaps

NASA Technical Reports Server (NTRS)

Silsbee, F B

1924-01-01

This report presents the results of an investigation to determine what effect the temperature of spark plug electrodes might have on the voltage at which a spark occurred. A spark gap was set up so that one electrode could be heated to temperatures up to 700 degrees C., while the other electrode and the air in the gap were maintained at room temperature. The sparking voltages were measured both with direct voltage and with voltage impulse from ignition coil. It was found that the sparking voltage of the gap decreased materially with increase of temperature. This change was more marked when the hot electrode was of negative polarity. The phenomena observed can be explained by the ionic theory of gaseous conduction, and serve to account for certain hitherto unexplained actions in the operation of internal combustion engines. These results indicate that the ignition spark will pass more readily when the spark-plug design is such as to make the electrodes run hot. This possible gain is, however, very closely limited by the danger of producing preignition. These experiments also show that sparking is somewhat easier when the hot electrode (which is almost always the central electrode) is negative than when the polarity is reversed.

Fabrication and characteristics of thin disc piezoelectric transformers based on piezoelectric buzzers with gap circles.

PubMed

Chang, Kuo-Tsai; Lee, Chun-Wei

2008-04-01

This paper investigates design, fabrication and test of thin disc piezoelectric transformers (PTs) based on piezoelectric buzzers with gap circles at different diameters of the gap circles. The performance test is focused on characteristics of voltage gains, including maximum voltage gains and maximum-gain frequencies, for each piezoelectric transformer under different load conditions. Both a piezoelectric buzzer and a gap circle on a silver electrode of the buzzer are needed to build any type of the PTs. Here, the gap circle is used to form a ring-shaped input electrode and a circle-shaped output electrode for each piezoelectric transformer. To do so, both structure and connection of a PT are first expressed. Then, operating principle of a PT and its related vibration mode observed by a carbon-power imaging technique are described. Moreover, an experimental setup for characterizing each piezoelectric transformer is constructed. Finally, effects of diameters of the gap circles on characteristics of voltage gains at different load resistances are discussed.

Breakdown voltage reduction by field emission in multi-walled carbon nanotubes based ionization gas sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saheed, M. Shuaib M.; Muti Mohamed, Norani; Arif Burhanudin, Zainal, E-mail: zainabh@petronas.com.my

2014-03-24

Ionization gas sensors using vertically aligned multi-wall carbon nanotubes (MWCNT) are demonstrated. The sharp tips of the nanotubes generate large non-uniform electric fields at relatively low applied voltage. The enhancement of the electric field results in field emission of electrons that dominates the breakdown mechanism in gas sensor with gap spacing below 14 μm. More than 90% reduction in breakdown voltage is observed for sensors with MWCNT and 7 μm gap spacing. Transition of breakdown mechanism, dominated by avalanche electrons to field emission electrons, as decreasing gap spacing is also observed and discussed.

Method and apparatus for electromagnetically braking a motor

NASA Technical Reports Server (NTRS)

Davis, Donald R. (Inventor); Radford, Nicolaus A (Inventor); Permenter, Frank Noble (Inventor); Parsons, Adam H (Inventor); Mehling, Joshua S (Inventor)

2011-01-01

An electromagnetic braking system and method is provided for selectively braking a motor using an electromagnetic brake having an electromagnet, a permanent magnet, a rotor assembly, and a brake pad. The brake assembly applies when the electromagnet is de-energized and releases when the electromagnet is energized. When applied the permanent magnet moves the brake pad into frictional engagement with a housing, and when released the electromagnet cancels the flux of the permanent magnet to allow a leaf spring to move the brake pad away from the housing. A controller has a DC/DC converter for converting a main bus voltage to a lower braking voltage based on certain parameters. The converter utilizes pulse-width modulation (PWM) to regulate the braking voltage. A calibrated gap is defined between the brake pad and permanent magnet when the brake assembly is released, and may be dynamically modified via the controller.

High-voltage pulse generator developed for wide-gap spark chambers

NASA Technical Reports Server (NTRS)

Keller, L. P.; Walschon, E. G.

1968-01-01

Low-inductance, high-capacitance Marx pulse generator provides for minimization of internal inductance and suppression of external electromagnetic radiation. The spark gaps of the generator are enclosed in a pressurized nitrogen atmosphere which allows the charging voltage to be varied by changing the nitrogen pressure.

Influence of barrier on partial discharge activity by a conducting particle in liquid nitrogen under AC voltages adopting UHF technique

NASA Astrophysics Data System (ADS)

Sarathi, R.; Giridhar, A. V.; Sethupathi, K.

2011-02-01

The UHF signals are generated due to PD formed by particle movement in liquid nitrogen under AC voltages. The levitation voltage of a particle in liquid nitrogen measured through UHF technique and by conventional PD measurement technique is the same, confirming the sensitivity of UHF technique for identification of PD activity. The frequency content of UHF signal generated due to particle movement in liquid nitrogen, under AC voltages, lies in the range 0.5-1.5 GHz. The characteristics of UHF signal generated due to particle movement between the barrier and high voltage/ground electrode is much similar to the signal generated by particle movement in clean electrode gap. Pseudo resonance phenomena can occur in liquid nitrogen due to particle movement. It is also observed that the partial discharge magnitude, in general, be high when the particle moves between the barrier and high voltage electrode when compared to the barrier and the ground electrode. Percentage of clay in epoxy nanocomposites has not altered the levitation voltage of the particle in the electrode gap. Zero span analysis clearly indicates that pseudo resonance occurs when particle moves (in a short gap) between the barrier and high voltage/ground electrode.

Development of longitudinally excited CO2 laser

NASA Astrophysics Data System (ADS)

Masroon, N. S.; Tanaka, M.; Tei, M.; Uno, K.; Tsuyama, M.; Nakano, H.

2018-05-01

Simple, compact, and affordable discharged-pumped CO2 laser controlled by a fast high voltage solid state switch has been developed. In this study, longitudinal excitation scheme has been adapted for simple configuration. In the longitudinal excitation scheme, the discharge is produced along the direction of the laser axis, and the electrodes are well separated with a small discharge cross-section. Triggered spark gap switch is usually used to switch out the high voltage because of simple and low cost. However, the triggered spark gap operates in the arc mode and suffer from recovery problem causing a short life time and low efficiency for high repetition rate operation. As a result, there is now considerable interest in replacing triggered spark gap switch with solid state switches. Solid state switches have significant advantages compared to triggered spark gap switch which include longer service lifetime, low cost and stable high trigger pulse. We have developed simple and low cost fast high voltage solid state switch that consists of series connected-MOSFETs. It has been installed to the longitudinally excited CO2 laser to realize the gap switch less operation. Characteristics of laser oscillation by varying the discharge length, charging voltage, capacitance and gas pressure have been evaluated. Longer discharge length produce high power of laser oscillation. Optimum charging voltage and gas pressure were existed for longitudinally excited CO2 laser.

Comparison of the surface dielectric barrier discharge characteristics under different electrode gaps

NASA Astrophysics Data System (ADS)

Gao, Guoqiang; Dong, Lei; Peng, Kaisheng; Wei, Wenfu; Li, Chunmao; Wu, Guangning

2017-01-01

Currently, great interests are paid to the surface dielectric barrier discharge due to the diverse and interesting application. In this paper, the influences of the electrode gap on the discharge characteristics have been studied. Aspects of the electrical parameters, the optical emission, and the discharge induced gas flow were considered. The electrode gap varied from 0 mm to 21 mm, while the applied AC voltage was studied in the range of 17 kV-27 kV. Results indicate that with the increase of the electrode gap, the variation of discharge voltage exhibits an increasing trend, while the other parameters (i.e., the current, power, and induced flow velocity) increase first, and then decrease once the gap exceeded the critical value. Mechanisms of the electrode gap influencing these key parameters were discussed from the point of equivalent circuit. The experimental results reveal that an optimal discharge gap can be obtained, which is closely related to the applied voltage. Visualization of the induced flow with different electrode gaps was realized by the Schlieren diagnostic technique. Finally, the velocities of induced gas flow determined by the pitot tube were compared with the results of intensity-integral method, and good agreements were found.

Bilayer-Spanning DNA Nanopores with Voltage-Switching between Open and Closed State

PubMed Central

2014-01-01

Membrane-spanning nanopores from folded DNA are a recent example of biomimetic man-made nanostructures that can open up applications in biosensing, drug delivery, and nanofluidics. In this report, we generate a DNA nanopore based on the archetypal six-helix-bundle architecture and systematically characterize it via single-channel current recordings to address several fundamental scientific questions in this emerging field. We establish that the DNA pores exhibit two voltage-dependent conductance states. Low transmembrane voltages favor a stable high-conductance level, which corresponds to an unobstructed DNA pore. The expected inner width of the open channel is confirmed by measuring the conductance change as a function of poly(ethylene glycol) (PEG) size, whereby smaller PEGs are assumed to enter the pore. PEG sizing also clarifies that the main ion-conducting path runs through the membrane-spanning channel lumen as opposed to any proposed gap between the outer pore wall and the lipid bilayer. At higher voltages, the channel shows a main low-conductance state probably caused by electric-field-induced changes of the DNA pore in its conformation or orientation. This voltage-dependent switching between the open and closed states is observed with planar lipid bilayers as well as bilayers mounted on glass nanopipettes. These findings settle a discrepancy between two previously published conductances. By systematically exploring a large space of parameters and answering key questions, our report supports the development of DNA nanopores for nanobiotechnology. PMID:25338165

Bilayer-spanning DNA nanopores with voltage-switching between open and closed state.

PubMed

Seifert, Astrid; Göpfrich, Kerstin; Burns, Jonathan R; Fertig, Niels; Keyser, Ulrich F; Howorka, Stefan

2015-02-24

Membrane-spanning nanopores from folded DNA are a recent example of biomimetic man-made nanostructures that can open up applications in biosensing, drug delivery, and nanofluidics. In this report, we generate a DNA nanopore based on the archetypal six-helix-bundle architecture and systematically characterize it via single-channel current recordings to address several fundamental scientific questions in this emerging field. We establish that the DNA pores exhibit two voltage-dependent conductance states. Low transmembrane voltages favor a stable high-conductance level, which corresponds to an unobstructed DNA pore. The expected inner width of the open channel is confirmed by measuring the conductance change as a function of poly(ethylene glycol) (PEG) size, whereby smaller PEGs are assumed to enter the pore. PEG sizing also clarifies that the main ion-conducting path runs through the membrane-spanning channel lumen as opposed to any proposed gap between the outer pore wall and the lipid bilayer. At higher voltages, the channel shows a main low-conductance state probably caused by electric-field-induced changes of the DNA pore in its conformation or orientation. This voltage-dependent switching between the open and closed states is observed with planar lipid bilayers as well as bilayers mounted on glass nanopipettes. These findings settle a discrepancy between two previously published conductances. By systematically exploring a large space of parameters and answering key questions, our report supports the development of DNA nanopores for nanobiotechnology.

A small size 1-3 atm pulsed CO2 laser with series-connected spark gaps ultraviolet preionization.

PubMed

Silakhori, K; Jelvani, S; Ghanavati, F; Sajad, B; Talebi, M; Sadr, M R

2014-01-01

A small size pulsed CO2 laser with rounded edge flat profiled electrodes and variable gas pressure in 1-3 atm range has been constructed and characterized. The perionization system consists of a pair of 16 series-connected spark gaps located along either side of the main electrodes by which, the number of required preionization capacitors is reduced to 4. Sharpening of the main discharge has been performed using a 300 pF peaking capacitor. A maximum energy of 160 mJ/pulse was obtained for CO2:N2:He≡1:1:8 gas mixture and 33 kV discharge voltage. By increasing the laser gas pressure in 1-3 atm range, the duration of spike and tail parts of the laser pulses have been reduced from 110 ns and 4 μs to 37 ns and 1 μs, respectively.

Ultra Fast, High Rep Rate, High Voltage Spark Gap Pulser

DTIC Science & Technology

1995-07-01

current rise time. The spark gap was designed to have a coaxial geometry reducing its inductance. Provisions were made to pass flowing gas between the...ULTRA FAST, HIGH REP RATE, HIGH VOLTAGE SPARK GAP PULSER Robert A. Pastore Jr., Lawrence E. Kingsley, Kevin Fonda, Erik Lenzing Electrophysics and...Modeling Branch AMSRL-PS-EA Tel.: (908)-532-0271 FAX: (908)-542-3348 U.S. Army Research Laboratory Physical Sciences Directorate Ft. Monmouth

Transition from Townsend to radio-frequency homogeneous dielectric barrier discharge in a roll-to-roll configuration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bazinette, R.; SIAME, Université de Pau et des Pays de l'Adour, Pau; Paillol, J.

The aim of this paper is to better understand the transition from Townsend to radio-frequency homogeneous dielectric barrier discharge (DBD) at atmospheric pressure. The study is done in an Ar/NH{sub 3} Penning mixture for an electrode configuration adapted to roll-to-roll plasma surface treatment. The study was led in a frequency range running from 50 kHz up to 8.3 MHz leading to different DBD modes with a 1 mm gas gap: Glow (GDBD), Townsend (TDBD), and Radio-frequency (RF-DBD). In the frequency range between TDBD and RF-DBD, from 250 kHz to 2.3 MHz, additional discharges are observed outside the inter-electrode gas gap. Because each high voltagemore » electrode are inside a dielectric barrel, these additional discharges occur on the side of the barrel where the gap is larger. They disappear when the RF-DBD mode is attained in the 1 mm inter-electrode gas gap, i.e., for frequencies equal or higher than 3 MHz. Fast imaging and optical emission spectroscopy show that the additional discharges are radio-frequency DBDs while the inter-electrode discharge is a TDBD. The RF-DBD discharge mode is attained when electrons drift becomes low enough compared to the voltage oscillation frequency to limit electron loss at the anode. To check that the additional discharges are due to a larger gas gap and a lower voltage amplitude, the TDBD/RF-DBD transition is investigated as a function of the gas gap and the applied voltage frequency and amplitude. Results show that the increase in the frequency at constant gas gap or in the gas gap at constant frequency allows to obtain RF-DBD instead of TDBD. At low frequency and large gap, the increase in the applied voltage allows RF-DBD/TDBD transition. As a consequence, an electrode configuration allowing different gap values is a solution to successively have different discharge modes with the same applied voltage.« less

Eight electrode optical readout gap

DOEpatents

Boettcher, G.E.; Crain, R.W.

1984-01-01

A protective device for a plurality of electrical circuits includes a plurality of isolated electrodes forming a gap with a common electrode. An output signal, electrically isolated from the circuits being monitored, is obtained by a photosensor viewing the discharge gap through an optical window. Radioactive stabilization of discharge characteristics is provided for slowly changing voltages and carbon tipped dynamic starters provide desirable discharge characteristics for rapidly varying voltages. A hydrogen permeation barrier is provided on external surfaces of the device.

DC arc weld starter

DOEpatents

Campiotti, Richard H.; Hopwood, James E.

1990-01-01

A system for starting an arc for welding uses three DC power supplies, a high voltage supply for initiating the arc, an intermediate voltage supply for sustaining the arc, and a low voltage welding supply directly connected across the gap after the high voltage supply is disconnected.

Parameters of a supershort avalanche electron beam generated in atmospheric-pressure air

NASA Astrophysics Data System (ADS)

Tarasenko, V. F.

2011-05-01

Conditions under which the number of runaway electrons in atmospheric-pressure air reaches ˜5 × 1010 are determined. Recommendations for creating runaway electron accelerators are given. Methods for measuring the parameters of a supershort avalanche electron beam and X-ray pulses from gas-filled diodes, as well as the discharge current and gap voltage, are described. A technique for determining the instant of runaway electron generation with respect to the voltage pulse is proposed. It is shown that the reduction in the gap voltage and the decrease in the beam current coincide in time. The mechanism of intense electron beam generation in gas-filled diodes is analyzed. It is confirmed experimentally that, in optimal regimes, the number of electrons generated in atmospheric-pressure air with energies T > eU m , where U m is the maximum gap voltage, is relatively small.

Physical mechanisms for reduction of the breakdown voltage in the circuit of a rod lightning protector with an opening microswitch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bobrov, Yu. K.; Zhuravkov, I. V.; Ostapenko, E. I.

2010-12-15

The effect of air gap breakdown voltage reduction in the circuit with an opening microswitch is substantiated from the physical point of view. This effect can be used to increase the efficiency of lightning protection system with a rod lightning protector. The processes which take place in the electric circuit of a lightning protector with a microswitch during a voltage breakdown are investigated. Openings of the microswitch are shown to lead to resonance overvoltages in the dc circuit and, as a result, efficient reduction in the breakdown voltage in a lightning protector-thundercloud air gap.

Experimental Test Of Whether Electrostatically Charged Micro-organisms And Their Spores Contribute To The Onset Of Arcs Across Vacuum Gaps

DOE Office of Scientific and Technical Information (OSTI.GOV)

none,; Grisham, Larry R.

2014-02-24

Recently it was proposed [L.R. Grisham, A. vonHalle, A.F. Carpe, Guy Rossi, K.R. Gilton, E.D. McBride, E.P. Gilson, A. Stepanov, T.N. Stevenson, Physics of Plasma 19 023107 (2012)] that one of the initiators of vacuum voltage breakdown between condu cting electrodes might be micro-organisms and their spores, previously deposited during exposure to air, which tnen become electrostatically charged when an electric potential is applied across the vacuum gap. The note describes a simple experiment to compare the number of voltage-conditioning pulses required to reach the nominal maxium operating voltage across a gap between two metallic conductors in a vacuum, comparingmore » cases in which biological cleaning was done just prior to pump-down with cases where this was not done, with each preceded by exposure to ambient air for three days. Based upon these results, it does not appear that air-deposited microbes and their spores constitute a major pathway for arc initiation, at least for exposure periods of a few days, and for vacuum gaps of a few millimeters, in the regime where voltage holding is usually observed to vary linearly with gap distance« less

Coordinated Research Program in Pulsed Power Physics.

DTIC Science & Technology

1984-02-27

storage element and the spark gap sectional area at the injected beam) which helps reduce elec- are both contained within the high pressure vessel of a...ns At the present time the continued research is aimed at duration of the first region corresponds closely to the FWHM answering various unresolved...10-ns e-beam has been used to trigger a spark gap pressurized to 3 atm of N2 . The gap voltage is close to self-breakdown voltage (Le., 0.95 Vb

Experimental investigation of high temperature high voltage thermionic diode for the space power nuclear reactor

NASA Astrophysics Data System (ADS)

Onufriyev, Valery. V.

2001-02-01

It is well known that the rise of arc from the dense glow discharge is connected with the thermion and secondary processes on the cathode surface (Granovsky, 1971; Leob, 1953; Engel, 1935). First model of breakdown of the cathode layer is connected with the increase of the cathode temperature in consequence of the ion bombardment that leads to the grows its thermo-emissive current. Other model shows the main role of the secondary effects on the cathode surface-the increase of the secondary ion emission coefficient-γi with the grows of glow discharge voltage. But the author of this investigation work of breakdown in Cs vapor (a transmission the glow discharge into self-maintaining arc discharge) discovered the next peculiarity: the value of breakdown voltage is constant when the values of vapor temperature (its pressure pcs) and cathode temperature Tk is constant too (Ub=constant with Tk=constant and pcs=constant) and it is not a statistical value (Onufryev, Grishin, 1996) (that was observed in gas glow discharges other authors (Granovsky, 1971; Leob, 1953; Engel, 1935)). The investigations of thermion high voltage high temperature diode (its breakdown characteristics in closed state and voltage-current characteristics in disclosed state) showed that the value of the breakdown voltage is depended on the vapor pressure in inter-electrode gap (IEG)-pcs and cathode temperature-Tk and is independent on IEG length-Δieg. On this base it was settled that the main role in transition of glow discharge to self-maintaining arc discharge plays an ion cathode layer but more exactly-the region of excited atoms-``Aston glow.'' .

Gating of Connexin Channels by transjunctional-voltage: Conformations and models of open and closed states.

PubMed

Bargiello, Thaddeus A; Oh, Seunghoon; Tang, Qingxiu; Bargiello, Nicholas K; Dowd, Terry L; Kwon, Taekyung

2018-01-01

Voltage is an important physiologic regulator of channels formed by the connexin gene family. Connexins are unique among ion channels in that both plasma membrane inserted hemichannels (undocked hemichannels) and intercellular channels (aggregates of which form gap junctions) have important physiological roles. The hemichannel is the fundamental unit of gap junction voltage-gating. Each hemichannel displays two distinct voltage-gating mechanisms that are primarily sensitive to a voltage gradient formed along the length of the channel pore (the transjunctional voltage) rather than sensitivity to the absolute membrane potential (V m or V i-o ). These transjunctional voltage dependent processes have been termed V j - or fast-gating and loop- or slow-gating. Understanding the mechanism of voltage-gating, defined as the sequence of voltage-driven transitions that connect open and closed states, first and foremost requires atomic resolution models of the end states. Although ion channels formed by connexins were among the first to be characterized structurally by electron microscopy and x-ray diffraction in the early 1980's, subsequent progress has been slow. Much of the current understanding of the structure-function relations of connexin channels is based on two crystal structures of Cx26 gap junction channels. Refinement of crystal structure by all-atom molecular dynamics and incorporation of charge changing protein modifications has resulted in an atomic model of the open state that arguably corresponds to the physiologic open state. Obtaining validated atomic models of voltage-dependent closed states is more challenging, as there are currently no methods to solve protein structure while a stable voltage gradient is applied across the length of an oriented channel. It is widely believed that the best approach to solve the atomic structure of a voltage-gated closed ion channel is to apply different but complementary experimental and computational methods and to use the resulting information to derive a consensus atomic structure that is then subjected to rigorous validation. In this paper, we summarize our efforts to obtain and validate atomic models of the open and voltage-driven closed states of undocked connexin hemichannels. This article is part of a Special Issue entitled: Gap Junction Proteins edited by Jean Claude Herve. Copyright © 2017 Elsevier B.V. All rights reserved.

High voltage switch triggered by a laser-photocathode subsystem

DOEpatents

Chen, Ping; Lundquist, Martin L.; Yu, David U. L.

2013-01-08

A spark gap switch for controlling the output of a high voltage pulse from a high voltage source, for example, a capacitor bank or a pulse forming network, to an external load such as a high gradient electron gun, laser, pulsed power accelerator or wide band radar. The combination of a UV laser and a high vacuum quartz cell, in which a photocathode and an anode are installed, is utilized as triggering devices to switch the spark gap from a non-conducting state to a conducting state with low delay and low jitter.

Single electron counting using a dual MCP assembly

NASA Astrophysics Data System (ADS)

Yang, Yuzhen; Liu, Shulin; Zhao, Tianchi; Yan, Baojun; Wang, Peiliang; Yu, Yang; Lei, Xiangcui; Yang, Luping; Wen, Kaile; Qi, Ming; Heng, Yuekun

2016-09-01

The gain, pulse height resolution and peak-to-valley ratio of single electrons detected by using a Chevron configured Microchannel Plate (MCP) assembly are studied. The two MCPs are separated by a 280 μm gap and are biased by four electrodes. The purpose of the study is to determine the optimum bias voltage arrangements for single electron counting. By comparing the results of various bias voltage combinations, we conclude that good performance for the electron counting can be achieved by operating the MCP assembly in saturation mode. In addition, by applying a small reverse bias voltage across the gap while adjusting the bias voltages of the MCPs, optimum performance of electron counting can be obtained.

Reliability Improvement of Ground Fault Protection System Using an S-Type Horn Attachment Gap in AC Feeding System

NASA Astrophysics Data System (ADS)

Ajiki, Kohji; Morimoto, Hiroaki; Shimokawa, Fumiyuki; Sakai, Shinya; Sasaki, Kazuomi; Sato, Ryogo

Contact wires used in feeding system for electric railroad are insulated by insulators. However, insulation of an insulator sometimes breaks down by surface dirt of an insulator and contact with a bird. The insulator breakdown derives a ground fault in feeding system. Ground fault will cause a human electric shock and a destruction of low voltage electric equipment. In order to prevent the damage by ground fault, an S-type horn has been applicable as equipped on insulators of negative feeder and protective wire until present. However, a concrete pole breaks down at the time of the ground fault because a spark-over voltage of the S-type horn is higher than a breakdown voltage of a concrete pole. Farther, the S-type horn installed in the steel tube pole does not discharge a case, because the earth resistance of a steel tube pole is very small. We assumed that we could solve these troubles by changing the power frequency spark-over voltage of the S-type horn from 12kV to 3kV. Accordingly, we developed an attachment gap that should be used to change the power frequency spark-over voltage of the S-type horn from 12kV to 3kV. The attachment gap consists of a gas gap arrester and a zinc oxide element. By the dynamic current test and the artificial ground fault test, we confirmed that the attachment gap in the S-type horn could prevent a trouble at the time of the ground fault.

Experimental study of rotating wind turbine breakdown characteristics in large scale air gaps

NASA Astrophysics Data System (ADS)

Wang, Yu; Qu, Lu; Si, Tianjun; Ni, Yang; Xu, Jianwei; Wen, Xishan

2017-06-01

When a wind turbine is struck by lightning, its blades are usually rotating. The effect of blade rotation on a turbine’s ability to trigger a lightning strike is unclear. Therefore, an arching electrode was used in a wind turbine lightning discharge test to investigate the difference in lightning triggering ability when blades are rotating and stationary. A negative polarity switching waveform of 250/2500 μs was applied to the arching electrode and the up-and-down method was used to calculate the 50% discharge voltage. Lightning discharge tests of a 1:30 scale wind turbine model with 2, 4, and 6 m air gaps were performed and the discharge process was observed. The experimental results demonstrated that when a 2 m air gap was used, the breakdown voltage increased as the blade speed was increased, but when the gap length was 4 m or longer, the trend was reversed and the breakdown voltage decreased. The analysis revealed that the rotation of the blades changes the charge distribution in the blade-tip region, promotes upward leader development on the blade tip, and decreases the breakdown voltage. Thus, the blade rotation of a wind turbine increases its ability to trigger lightning strikes.

ZnO thin-film transistors with a polymeric gate insulator built on a polyethersulfone substrate

NASA Astrophysics Data System (ADS)

Hyung, Gun Woo; Park, Jaehoon; Koo, Ja Ryong; Choi, Kyung Min; Kwon, Sang Jik; Cho, Eou Sik; Kim, Yong Seog; Kim, Young Kwan

2012-03-01

Zinc oxide (ZnO) thin-film transistors (TFTs) with a cross-linked poly(vinyl alcohol) (c-PVA) insulator are fabricated on a polyethersulfone substrate. The ZnO film, formed by atomic layer deposition, shows a polycrystalline hexagonal structure with a band gap energy of about 3.37 eV. The fabricated ZnO TFT exhibits a field-effect mobility of 0.38 cm2/Vs and a threshold voltage of 0.2 V. The hysteresis of the device is mainly caused by trapped electrons at the c-PVA/ZnO interface, whereas the positive threshold voltage shift occurs as a consequence of constant positive gate bias stress after 5000 s due to an electron injection from the ZnO film into the c-PVA insulator.

Method and apparatus for controlling electrode gap during vacuum consumable arc remelting

DOEpatents

Fisher, R.W.; Maroone, J.P.; Tipping, D.W.; Zanner, F.J.

During vacuum consumable arc remelting the electrode gap between a consumable electrode and a pool of molten metal is difficult to control. The present invention monitors drop shorts by detecting a decrease in the voltage between the consumable electrode and molten pool. The drop shorts and their associated voltage reductions occur as repetitive pulses which are closely correlated to the electrode gap. Thus, the method and apparatus of the present invention controls electrode gap based upon drop shorts detected from the monitored anode-cathode voltage. The number of drop shorts are accumulated, and each time the number of drop shorts reach a predetermined number, the average period between drop shorts is calculated from this predetermined number and the time in which this number is accumulated. This average drop short period is used in a drop short period electrode gap model which determines the actual electrode gap from the drop short. The actual electrode gap is then compared with a desired electrode gap which is selected to produce optimum operating conditions and the velocity of the consumable error is varied based upon the gap error. The consumable electrode is driven according to any prior art system at this velocity. In the preferred embodiment, a microprocessor system is utilized to perform the necessary calculations and further to monitor the duration of each drop short. If any drop short exceeds a preset duration period, the consumable electrode is rapidly retracted a predetermined distance to prevent bonding of the consumable electrode to the molten remelt.

Drop short control of electrode gap

DOEpatents

Fisher, Robert W.; Maroone, James P.; Tipping, Donald W.; Zanner, Frank J.

1986-01-01

During vacuum consumable arc remelting the electrode gap between a consumable electrode and a pool of molten metal is difficult to control. The present invention monitors drop shorts by detecting a decrease in the voltage between the consumable electrode and molten pool. The drop shorts and their associated voltage reductions occur as repetitive pulses which are closely correlated to the electrode gap. Thus, the method and apparatus of the present invention controls electrode gap based upon drop shorts detected from the monitored anode-cathode voltage. The number of drop shorts are accumulated, and each time the number of drop shorts reach a predetermined number, the average period between drop shorts is calculated from this predetermined number and the time in which this number is accumulated. This average drop short period is used in a drop short period electrode gap model which determines the actual electrode gap from the drop short. The actual electrode gap is then compared with a desired electrode gap which is selected to produce optimum operating conditions and the velocity of the consumable error is varied based upon the gap error. The consumable electrode is driven according to any prior art system at this velocity. In the preferred embodiment, a microprocessor system is utilized to perform the necessary calculations and further to monitor the duration of each drop short. If any drop short exceeds a preset duration period, the consumable electrode is rapidly retracted a predetermined distance to prevent bonding of the consumable electrode to the molten remelt.

Laboratory demonstration of lightning strike pattern on different roof tops installed with Franklin Rods

NASA Astrophysics Data System (ADS)

Ullah, Irshad; Baharom, MNR; Ahmed, H.; Luqman, HM.; Zainal, Zainab

2017-11-01

Protection against lightning is always a challenging job for the researcher. The consequences due to lightning on different building shapes needs a comprehensive knowledge in order to provide the information to the common man. This paper is mainly concern with lightning pattern when it strikes on the building with different shape. The work is based on the practical experimental work in high voltage laboratory. Different shapes of the scaled structures have been selected in order to investigate the equal distribution of lightning voltage. The equal distribution of lightning voltage will provide the maximum probability of lightning strike on air terminal of the selected shapes. Building shapes have a very important role in lightning protection. The shapes of the roof tops have different geometry and the Franklin rod installation is also varies with changing the shape of the roof top. According to the ambient weather condition of Malaysia high voltage impulse is applied on the lightning rod installed on different geometrical shape. The equal distribution of high voltage impulse is obtained as the geometry of the scaled structure is identical and the air gap for all the tested object is kept the same. This equal distribution of the lightning voltage also proves that the probability of lightning strike is on the corner and the edges of the building structure.

Influence of different gaps among the split targets with gradient potential to the discharge effects generated by hypervelocity impact

NASA Astrophysics Data System (ADS)

Tang, Enling; Zhao, Liangliang; Han, Yafei; Zhang, Qingming; Wang, Ruizhi; He, Liping; Liu, Shuhua

2018-04-01

Due to the actual situation of spacecraft surface' charging, such as convex corners, weld line, whalebone and a multiple-interfaces with different materials, all these are main factors leading to uneven charging of spacecraft surface, even creating gradient potential. If the charging spacecraft surface is impacted by debris or micrometeor, discharge effect induced by impacting will pose a serious threat to spacecraft in orbit. So realizing spacecraft charging surface with different potential differences and grasping discharge characteristics are a decisive importance at the different experimental conditions in laboratory. To simulate the spacecraft surface with a gradient potential in laboratory, spacecraft surface is split into different parts, which different gaps reserved in 2 adjacent surface is added resistance to create different potential surfaces, and the high potential surface as a impact target in the split targets. Charging circuit system realizing different gradient potential and discharge test system are built by ourselves, combining with two-stage light gas gun loading system, six sets of experiments have been performed about hypervelocity impact on 2A12 aluminum split targets with gradient potentials. In the experiments, gaps of 2A12 aluminum target are the same among different parts in every experiments, the gaps of the split targets are 2mm, 3mm, 5mm, 7mm and 10mm in the experiments, respectively. And the applied voltage is 300V in all the experiments and high-potential 2A12 aluminum plate as the impact target. The experiments have been performed at the impact velocity of about 3km/s and the incidence angles of 60o and 90o (between projectile flying trajectory and target plane), respectively. Voltage probe and current probes are used for acquiring discharge voltages and currents during the process of the impact. The experimental results showed that the discharge induced by impact plasma were generated among high and low-potential target by forming a plasma discharge channel. With the increasing of the gaps among the high and low-potential targets, the peak values of the discharge current decreased first then increased. When the gaps of split targets reached a certain value, the peak values of the discharge current decreased again. Meanwhile, the gaps among high and low-potential targets was 5mm, the peak value of the discharge current was the smallest. With the increasing of the gaps among the split targets, a primary discharge duration also increased. However, when the gaps among the split targets were greater than 5mm, increasing trend of discharge duration would slow down. When the gaps among the split targets were greater than 7mm, there was a secondary discharge phenomenon, and the physical explanations were given about the influence of different gaps among the split targets on the discharge effects created by hypervelocity impact.

Time-resolved imaging of the plasma development in a triggered vacuum switch

NASA Astrophysics Data System (ADS)

Park, Wung-Hoa; Kim, Moo-Sang; Son, Yoon-Kyoo; Frank, Klaus; Lee, Byung-Joon; Ackerman, Thilo; Iberler, Marcus

2017-12-01

Triggered vacuum switches (TVS) are particularly used in pulsed power technology as closing switches for high voltages and high charge transfer. A non-sealed-off prototype was designed with a side-on quartz window to investigate the evolution of the trigger discharge into the main discharge. The image acquisition was done with a fast CCD camera PI-MAX2 from Princeton Instruments. The CCD camera has a maximum exposure time of 2 ns. The electrode configuration of the prototype is a conventional six-rod gap type, a capacitor bank with C = 16.63 μF, which corresponds at 20 kV charging voltage to a total stored charge of 0.3 C or a total energy of 3.3 kJ. The peak current is 88 kA. According to the tremendously highly different light intensities during the trigger and main discharge, the complete discharge is split into three phases: a trigger breakdown phase, an intermediate phase and a main discharge phase. The CCD camera images of the first phase show instabilities of the trigger breakdown, in phase 2 three different discharge modes are observed. After the first current maximum the discharge behavior is reproducible.

Flash x-ray generator having a liquid-anode diode

NASA Astrophysics Data System (ADS)

Oizumi, Teiji; Sato, Eiichi; Shikoda, Arimitsu; Sagae, Michiaki; Takahashi, Kei; Tamakawa, Yoshiharu; Yanagisawa, Toru; Ojima, Hidenori; Takayama, Kazuyoshi; Fujiwara, Akihiro; Mitoya, Kanji

1995-05-01

The constructions and the fundamental studies of a flash x-ray generator having a liquid-anode diode are described. This flash x-ray generator consisted of the following essential components: a high-voltage power supply, a high-voltage pulser, a thyratron pulser as a trigger device, an oil diffusion pump, and a flash x-ray tube. The main condenser was negatively charged from 50 to 70 kV by the power supply, and the electric charges in the condenser were discharged to the x-ray tube after closing a gap switch by using the thyratron pulser. The flash x- ray tube was of a diode type having a mercury anode and a ferrite cathode. The pressure of the tube was primarily determined by the steam pressure of mercury as a function of temperature. The maximum output voltage from the pulser was about -1 times the charged voltage. The maximum tube voltage and current were approximately 60 kV and 3 kA, respectively, with a charged voltage of -60 kV and a space between the anode and cathode electrodes (AC space) of 2.0 mm. The pulse widths of flash x rays were about 50 ns, and the x-ray intensity measured by a thermoluminescence dosimeter had a value of about 2.5 (mu) C/kg at 0.3 m per pulse with a charged voltage of -70 kV and an AC space of 1.0 mm.

Transient current interruption mechanism in a magnetically delayed vacuum switch

NASA Technical Reports Server (NTRS)

Morris, Gibson, Jr.; Dougal, Roger A.

1993-01-01

The capacity of a magnetically delayed vacuum switch to conduct current depends on the density of plasma injected into the switch. Exceeding the current capacity results in the switch entering a lossy mode of operation characterized by a transient interruption of the main current (opening behavior) and a rapid increase of voltage across the vacuum gap. Streak and framing photographs of the discharge indicate that a decrease of luminosity near the middle of the gap preceeds the transition to the opening phase. The zone of low luminosity propagates toward the cathode. This evidence suggests that the mechanism causing the opening phase is erosion of the background plasma in a manner similar to that in a plasma-opening switch. The resulting ion depletion forces a space-charge-limited conduction mode. The switch inductance maintains a high discharge current even during the space-charge-limited conduction phase, thus producing high internal fields. The high accelerating voltage, in turn, produces electron and ion beams that heat the electrode surfaces. As a result of the heating, jets of electrode vapor issue from the electrodes, either cathode or anode, depending on the selection of electrode materials.

High Voltage Seismic Generator

NASA Astrophysics Data System (ADS)

Bogacz, Adrian; Pala, Damian; Knafel, Marcin

2015-04-01

This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes constructed device very mobile. The project is still developing.

Needle-array to Plate DBD Plasma Using Sine AC and Nanosecond Pulse Excitations for Purpose of Improving Indoor Air Quality

PubMed Central

Zhang, Li; Yang, Dezheng; Wang, Wenchun; Wang, Sen; Yuan, Hao; Zhao, Zilu; Sang, Chaofeng; Jia, Li

2016-01-01

In this study, needle-array to plate electrode configuration was employed to generate an atmospheric air diffuse discharge using both nanosecond pulse and sine AC voltage as excitation voltage for the purpose of improving indoor air quality. Different types of voltage sources and electrode configurations are employed to optimize electrical field distribution and improve discharge stability. Discharge images, electrical characteristics, optical emission spectra, and plasma gas temperatures in both sine AC discharge and nanosecond pulse discharge were compared and the discharge stability during long operating time were discussed. Compared with the discharge excited by sine AC voltage, the nanosecond pulsed discharge is more homogenous and stable, besides, the plasma gas temperature of nanosecond pulse discharge is much lower. Using packed-bed structure, where γ- Al2O3 pellets are filled in the electrode gap, has obvious efficacy in the production of homogenous discharge. Furthermore, both sine AC discharge and nanosecond pulse discharge were used for removing formaldehyde from flowing air. It shows that nanosecond pulse discharge has a significant advantage in energy cost. And the main physiochemical processes for the generation of active species and the degradation of formaldehyde were discussed. PMID:27125663

Formation of 1.4 MeV runaway electron flows in air using a solid-state generator with 10 MV/ns voltage rise rate

NASA Astrophysics Data System (ADS)

Mesyats, G. A.; Pedos, M. S.; Rukin, S. N.; Rostov, V. V.; Romanchenko, I. V.; Sadykova, A. G.; Sharypov, K. A.; Shpak, V. G.; Shunailov, S. A.; Ul'masculov, M. R.; Yalandin, M. I.

2018-04-01

Fulfillment of the condition that the voltage rise time across an air gap is comparable with the time of electron acceleration from a cathode to an anode allows a flow of runaway electrons (REs) to be formed with relativistic energies approaching that determined by the amplitude of the voltage pulse. In the experiment described here, an RE energy of 1.4 MeV was observed by applying a negative travelling voltage pulse of 860-kV with a maximum rise rate of 10 MV/ns and a rise time of 100-ps. The voltage pulse amplitude was doubled at the cathode of the 2-cm-long air gap due to the delay of conventional pulsed breakdown. The above-mentioned record-breaking voltage pulse of ˜120 ps duration with a peak power of 15 GW was produced by an all-solid-state pulsed power source utilising pulse compression/sharpening in a multistage gyromagnetic nonlinear transmission line.

Characteristics of a large vacuum wave precursor on the SABRE voltage adder MITL and extraction ion diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cuneo, M.E.; Hanson, D.L.; Menge, P.R.

SABRE (Sandia Accelerator and Beam Research Experiment) is a ten-cavity linear induction magnetically insulated voltage adder (6 MV, 300 kA) operated in positive polarity to investigate issues relevant to ion beam production and propagation for inertial confinement fusion. The voltage adder section is coupled to an applied-B extraction ion diode via a long coaxial output transmission line. Observations indicate that the power propagates in a vacuum wave prior to electron emission. After the electron emission threshold is reached, power propagates in a magnetically insulated wave. The precursor is observed to have a dominant impact on he turn-on, impedance history, andmore » beam characteristics of applied-B ion diodes since the precursor voltage is large enough to cause electron emission at the diode from both the cathode feed and cathode tips. The amplitude of the precursor at the load (3--4.5 MV) is a significant fraction of the maximum load voltage (5--6 MV) because (1) the transmission line gaps ( {approx} 9 cm at output) and therefore impedances are relatively large, and hence the electric field threshold for electron emission (200 to 300 kV/cm) is not reached until well into the power pulse rise time; and (2) the rapidly falling forward wave and diode impedance reduces the ratio of main pulse voltage to precursor voltage. Experimental voltage and current data from the transmission line and the ion diode will be presented and compared with TWOQUICK (2-D electromagnetic PIC code) simulations and analytic models.« less

Investigation of Dielectric Breakdown Characteristics for Double-break Vacuum Interrupter and Dielectric Breakdown Probability Distribution in Vacuum Interrupter

NASA Astrophysics Data System (ADS)

Shioiri, Tetsu; Asari, Naoki; Sato, Junichi; Sasage, Kosuke; Yokokura, Kunio; Homma, Mitsutaka; Suzuki, Katsumi

To investigate the reliability of equipment of vacuum insulation, a study was carried out to clarify breakdown probability distributions in vacuum gap. Further, a double-break vacuum circuit breaker was investigated for breakdown probability distribution. The test results show that the breakdown probability distribution of the vacuum gap can be represented by a Weibull distribution using a location parameter, which shows the voltage that permits a zero breakdown probability. The location parameter obtained from Weibull plot depends on electrode area. The shape parameter obtained from Weibull plot of vacuum gap was 10∼14, and is constant irrespective non-uniform field factor. The breakdown probability distribution after no-load switching can be represented by Weibull distribution using a location parameter. The shape parameter after no-load switching was 6∼8.5, and is constant, irrespective of gap length. This indicates that the scatter of breakdown voltage was increased by no-load switching. If the vacuum circuit breaker uses a double break, breakdown probability at low voltage becomes lower than single-break probability. Although potential distribution is a concern in the double-break vacuum cuicuit breaker, its insulation reliability is better than that of the single-break vacuum interrupter even if the bias of the vacuum interrupter's sharing voltage is taken into account.

High voltage breakdown phenomena in RF window, electron gun and RF cavities in 250 kW CW C band Klystron and their preventive measures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lamba, O.S.; Badola, Richa; Baloda, Suman

The paper describes voltage break down phenomenon and preventive measures in components of 250 KW CW, C band Klystron under development at CEERI Pilani. The Klystron operates at a beam voltage of 50 kV and delivers 250 kW RF power at 5 GHz frequency. The Klystron consists of several key components and regions, which are subject to high electrical stress. The most important regions of electrical breakdown are electron gun, the RF ceramic window and output cavity gap area. In the critical components voltage breakdown considered at design stage by proper gap and other techniques. All these problems discussed, asmore » well as solution to alleviate this problem. The electron gun consists basically of cathode, BFE and anode. The cathode is operated at a voltage of 50 kV. In order to maintain the voltage standoff between cathode and anode a high voltage alumina seal and RF window have been designed developed and successfully used in the tube. (author)« less

An equivalent circuit for small atrial trabeculae of frog.

PubMed Central

Jakobsson, E; Barr, L; Connor, J A

1975-01-01

An equivalent electrical circuit has been constructed for small atrial trabecula of frog in a double sucrose gap voltage clamp apparatus. The basic strategy in constructing the circuit was to derive the distribution of membrane capacitance and extracellular resistance from the preparation's response to small voltage displacements near the resting condition, when the membrane conductance is presumably quite low. Then standard Hodgkin-Huxley channels were placed in parallel with the capacitance and the results of voltage clamp experiments were simulated. The results suggest that the membranes of the preparation cannot in fact be clamped near the control voltage nor can the ionic currents be measured directly with reasonable accuracy by axon standards. It may or may not be a realizable goal in the future to define the preparation's electrical behavior well enough to permit the ultimate quantitative description of the membrane's specific ion conductances. The result of this paper suggest that if this goal is achieved using the double sucrose gap voltage clamp, it will be by a detailed quantitative accounting for substantial irreducible errors in voltage control, rather than by experimental achievement of good voltage control. PMID:1203441

Back-streaming ion beam measurements in a Self Magnetic Insulated (SMP) electron diode

NASA Astrophysics Data System (ADS)

Mazarakis, Michael; Johnston, Mark; Kiefer, Mark; Leckbee, Josh; Webb, Timothy; Bennett, Nichelle; Droemer, Darryl; Welch, Dale; Nielsen, Dan; Ziska, Derek; Wilkins, Frank; Advance radiography department Team

2014-10-01

A self-magnetic pinch diode (SMP) is presently the electron diode of choice for high energy flash x-ray radiography utilizing pulsed power drivers. The Sandia National Laboratories RITS accelerator is presently fit with an SMP diode that generates very small electron beam spots. RITS is a Self-Magnetically Insulated Transmission Line (MITL) voltage adder that adds the voltage pulse of six 1.3 MV inductively insulated cavities. The diode's anode is made of high Z metal in order to produce copious and energetic flash x-rays for radiographic imaging of high areal density objects. In any high voltage inductive voltage adder (IVA) utilizing MITLs to transmit the power to the diode load, the precise knowledge of the accelerating voltage applied on the anode-cathode (A-K) gap is problematic. This is even more difficult in an SMP diode where the A-K gap is very small (~1 cm) and the diode region very hostile. We are currently measuring the back-streaming ion currents emitted from the anode and propagating through a hollow cathode tip. We then are evaluating the A-K gap voltage by ion time of flight measurements supplemented with filtered Rogowski coils. Sandia is a multiprogram laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Company, for the United States Department of Energy's National Nuclear Security Administration under Contract No. DE- AC04-94AL850.

Investigation of atmospheric pressure glow microdischarge between flat cathode and needle anode in helium and argon

NASA Astrophysics Data System (ADS)

Astafiev, Alexander; Belyaev, Vladimir; Zamchii, Roman; Kudryavtsev, Anatoly; Stepanova, Olga; Chen, Zhaoquan

2016-09-01

DC atmospheric-pressure glow microdischarge was generated between a flat cathode and needle anode with a diameter of 100 μm in a special chamber with helium or argon. Dependences of discharge parameters on an interelectrode gap was investigated with an original experimental setup based on a movable arm on the hinge joint which allowed changing the gap with a step of 5 μm. The gap was varied from 5 to 700 μm. Discharge current was 1-21 mA. Such discharge cell has a very low interelectrode capacitance and provides increasing the stability of the discharge against arc formation (transition to RC oscillations mode) at low currents of 1 mA. A weak dependence of discharge voltage across the gap was revealed in helium at 100-250 μm between the electrodes (normal discharge). In contrast to this, glow microdischarge in argon has a descending current-voltage characteristic and unstable nature. The discharge voltage depending on the gap changes significantly slower than in helium. According to our estimations, the strength of electrical field of positive glow in argon is 5 times lower than in helium. Saint Petersburg State University (Grant No. 0.37.218.2016).

Impurity-induced anisotropic semiconductor-semimetal transition in monolayer biased black phosphorus

NASA Astrophysics Data System (ADS)

Bui, D. H.; Yarmohammadi, Mohsen

2018-07-01

Taking into account the electron-impurity interaction within the continuum approximation of tight-binding model, the Born approximation, and the Green's function method, the main features of anisotropic electronic phase transition are investigated in monolayer biased black phosphorus (BP). To this end, we concentrated on the disordered electronic density of states (DOS), which gives useful information for electro-optical devices. Increasing the impurity concentration in both unbiased and biased impurity-infected single-layer BP, in addition to the decrease of the band gap, independent of the direction, leads to the midgap states and an extra Van Hove singularity inside and outside of the band gap, respectively. Furthermore, strong impurity scattering potentials lead to a semiconductor-semimetal transition and one more Van Hove singularity in x-direction of unbiased BP and surprisingly, this transition does not occur in biased BP. We found that there is no phase transition in y-direction. Since real applications require structures with modulated band gaps, we have studied the influence of different bias voltages on the disordered DOS in both directions, resulting in the increase of the band gap.

BPM Breakdown Potential in the PEP-II B-factory Storage Ring Collider

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weathersby, Stephen; Novokhatski, Alexander; /SLAC

2010-02-10

High current B-Factory BPM designs incorporate a button type electrode which introduces a small gap between the button and the beam chamber. For achievable currents and bunch lengths, simulations indicate that electric potentials can be induced in this gap which are comparable to the breakdown voltage. This study characterizes beam induced voltages in the existing PEP-II storage ring collider BPM as a function of bunch length and beam current.

Contribution of the backstreaming ions to the Self-Magnetic pinch (SMP) diode current

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mazarakis, Michael G.; Cuneo, Michael E.; Fournier, Sean D.

2016-08-08

Summary form only given. The results presented here were obtained with an SMP diode mounted at the front high voltage end of the RITS accelerator. RITS is a Self-Magnetically Insulated Transmission Line (MITL) voltage adder that adds the voltage pulses of six 1.3 MV inductively insulated cavities. Our experiments had two objectives: first to measure the contribution of the back-streaming ion currents emitted from the anode target to the diode beam current, and second to try to evaluate the energy of those ions and hence the actual Anode-Cathode (A-K) gap actual voltage. In any very high voltage inductive voltage addermore » (IVA) utilizing MITLs to transmit the power to the diode load, the precise knowledge of the accelerating voltage applied on the anode-cathode (A-K) gap is problematic. The accelerating voltage quoted in the literature is from estimates based on measurements of the anode and cathode currents of the MITL far upstream from the diode and utilizing the para-potential flow theories and inductive corrections. Thus it would be interesting to have another independent measurement to evaluate the A-K voltage. The diode's anode is made of a number of high Z metals in order to produce copious and energetic flash x-rays. The backstreaming currents are a strong fraction of the anode materials and their stage of cleanness and gas adsorption. We have measured the back-streaming ion currents emitted from the anode and propagating through a hollow cathode tip for various diode configurations and different techniques of target cleaning treatments, such as heating to very high temperatures with DC and pulsed current, with RF plasma cleaning and with both plasma cleaning and heating. Finally, we have also evaluated the A-K gap voltage by ion filtering techniques.« less

The smooth transition from field emission to a self-sustained plasma in microscale electrode gaps at atmospheric pressure

NASA Astrophysics Data System (ADS)

Bilici, Mihai A.; Haase, John R.; Boyle, Calvin R.; Go, David B.; Sankaran, R. Mohan

2016-06-01

We report on the existence of a smooth transition from field emission to a self-sustained plasma in microscale electrode geometries at atmospheric pressure. This behavior, which is not found at macroscopic scales or low pressures, arises from the unique combination of large electric fields that are created in microscale dimensions to produce field-emitted electrons and the high pressures that lead to collisional ionization of the gas. Using a tip-to-plane electrode geometry, currents less than 10 μA are measured at onset voltages of ˜200 V for gaps less than 5 μm, and analysis of the current-voltage (I-V) relationship is found to follow Fowler-Nordheim behavior, confirming field emission. As the applied voltage is increased, gas breakdown occurs smoothly, initially resulting in the formation of a weak, partial-like glow and then a self-sustained glow discharge. Remarkably, this transition is essentially reversible, as no significant hysteresis is observed during forward and reverse voltage sweeps. In contrast, at larger electrode gaps, no field emission current is measured and gas breakdown occurs abruptly at higher voltages of ˜400 V, absent of any smooth transition from the pre-breakdown condition and is characterized only by glow discharge formation.

Research of an electromagnetically actuated spark gap switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Tianyang; Chen, Dongqun, E-mail: csycdq@163.com; Liu, Jinliang

2013-11-15

As an important part of pulsed power systems, high-voltage and high-current triggered spark gap switch and its trigger system are expected to achieve a compact structure. In this paper, a high-voltage, high-current, and compact electromagnetically actuated spark gap switch is put forward, and it can be applied as a part of an intense electron-beam accelerator (IEBA). A 24 V DC power supply is used to trigger the switch. The characteristics of the switch were measured for N{sub 2} when the gas pressure is 0.10–0.30 MPa. The experimental results showed that the voltage/pressure (V/p) curve of the switch was linear relationship.more » The operating ranges of the switch were 21%–96%, 21%–95%, 21%–95%, 19%–95%, 17%–95%, and 16%–96% of the switch's self-breakdown voltage when the gas pressures were 0.10, 0.14, 0.18, 0.22, 0.26, and 0.30 MPa, respectively. The switch and its trigger system worked steadily and reliably with a peak voltage of 30 kV, a peak current of 60 kA in the IEBA when the pressure of N{sub 2} in the switch was 0.30 MPa.« less

The identification of conduction gaps after pulmonary vein isolation using a new electroanatomic mapping system.

PubMed

Masuda, Masaharu; Fujita, Masashi; Iida, Osamu; Okamoto, Shin; Ishihara, Takayuki; Nanto, Kiyonori; Kanda, Takashi; Tsujimura, Takuya; Matsuda, Yasuhiro; Okuno, Shota; Ohashi, Takuya; Tsuji, Aki; Mano, Toshiaki

2017-11-01

The reconnection of left atrial-pulmonary vein (LA-PV) conduction after the initial procedure of pulmonary vein (PV) isolation is not rare, and is one of the main cause of atrial fibrillation (AF) recurrence after PV isolation. We investigated feasibility of a new ultrahigh-resolution mapping system using a 64-pole small basket catheter for the identification of LA-PV conduction gaps. This prospective study included 31 consecutive patients (20 with persistent AF) undergoing a second ablation after a PV isolation procedure with LA-PV reconnected conduction at any of the 4 PVs. An LA-PV map was created using the mapping system, and ablation was performed at the estimated gap location. The propagation map identified 54 gaps from 39 ipsilateral PV pairs, requiring manual electrogram reannotation for 23 gaps (43%). Gaps at the anterior and carinal regions of left and right ipsilateral PVs required manual electrogram reannotation more frequently than the other regions. The voltage map could identify the gap only in 19 instances (35%). Electrophysiological properties of the gaps (multiple gaps in the same ipsilateral PVs, conduction time, velocity, width, and length) did not differ between those needing and not needing manual electrogram reannotation. During the gap ablation, either the activation sequence alteration or elimination of PV potentials was observed using a circular catheter placed in the PV, suggesting that all the identified gaps were correct. This new electroanatomic mapping system visualized all the LA-PV gaps in patients undergoing a second AF ablation. Copyright © 2017 Heart Rhythm Society. Published by Elsevier Inc. All rights reserved.

A new approach to high-efficiency multi-band-gap solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barnham, K.W.J.; Duggan, G.

1990-04-01

The advantages of using multi-quantum-well or superlattice systems as the absorbers in concentrator solar cells are discussed. By adjusting the quantum-well width, an effective band-gap variation that covers the high-efficiency region of the solar spectrum can be obtained. Higher efficiencies should result from the ability to optimize separately current and voltage generating factors. Suitable structures to ensure good carrier separation and collection and to obtain higher open-circuit voltages are presented using the (AlGa)As/GaAs/(InGa)As system. Efficiencies above existing single-band-gap limits should be achievable, with upper limits in excess of 40%.

Tunneling effects in the current-voltage characteristics of high-efficiency GaAs solar cells

NASA Technical Reports Server (NTRS)

Kachare, R.; Anspaugh, B. E.; Garlick, G. F. J.

1988-01-01

Evidence is that tunneling via states in the forbidden gap is the dominant source of excess current in the dark current-voltage (I-V) characteristics of high-efficiency DMCVD grown Al(x)Ga(1-x)As/GaAs(x is equal to or greater than 0.85) solar cells. The dark forward and reverse I-V measurements were made on several solar cells, for the first time, at temperatures between 193 and 301 K. Low-voltage reverse-bias I-V data of a number of cells give a thermal activation energy for excess current of 0.026 + or - 0.005 eV, which corresponds to the carbon impurity in GaAs. However, other energy levels between 0.02 eV and 0.04 eV were observed in some cells which may correspond to impurity levels introduced by Cu, Si, Ge, or Cd. The forward-bias excess current is mainly due to carrier tunneling between localized levels created in the space-charge layer by impurities such as carbon, which are incorporated during the solar cell growth process. A model is suggested to explain the results.

Influence of Wire Electrical Discharge Machining (WEDM) process parameters on surface roughness

NASA Astrophysics Data System (ADS)

Yeakub Ali, Mohammad; Banu, Asfana; Abu Bakar, Mazilah

2018-01-01

In obtaining the best quality of engineering components, the quality of machined parts surface plays an important role. It improves the fatigue strength, wear resistance, and corrosion of workpiece. This paper investigates the effects of wire electrical discharge machining (WEDM) process parameters on surface roughness of stainless steel using distilled water as dielectric fluid and brass wire as tool electrode. The parameters selected are voltage open, wire speed, wire tension, voltage gap, and off time. Empirical model was developed for the estimation of surface roughness. The analysis revealed that off time has a major influence on surface roughness. The optimum machining parameters for minimum surface roughness were found to be at a 10 V open voltage, 2.84 μs off time, 12 m/min wire speed, 6.3 N wire tension, and 54.91 V voltage gap.

Electronic Transport Properties of One Dimensional Zno Nanowires Studied Using Maximally-Localized Wannier Functions

NASA Astrophysics Data System (ADS)

Sun, Xu; Gu, Yousong; Wang, Xueqiang

2012-08-01

One dimensional ZnO NWs with different diameters and lengths have been investigated using density functional theory (DFT) and Maximally Localized Wannier Functions (MLWFs). It is found that ZnO NWs are direct band gap semiconductors and there exist a turn on voltage for observable current. ZnO nanowires with different diameters and lengths show distinctive turn-on voltage thresholds in I-V characteristics curves. The diameters of ZnO NWs are greatly influent the transport properties of ZnO NWs. For the ZnO NW with large diameter that has more states and higher transmission coefficients leads to narrow band gap and low turn on voltage. In the case of thinner diameters, the length of ZnO NW can effects the electron tunneling and longer supercell lead to higher turn on voltage.

Catheterized plasma X-ray source

DOEpatents

Derzon, Mark S.; Robinson, Alex; Galambos, Paul C.

2017-06-20

A radiation generator useful for medical applications, among others, is provided. The radiation generator includes a catheter; a plasma discharge chamber situated within a terminal portion of the catheter, a cathode and an anode positioned within the plasma discharge chamber and separated by a gap, and a high-voltage transmission line extensive through the interior of the catheter and terminating on the cathode and anode so as to deliver, in operation, one or more voltage pulses across the gap.

High reliability low jitter pulse generator

DOEpatents

Savage, Mark E.; Stoltzfus, Brian S.

2013-01-01

A method and concomitant apparatus for generating pulses comprising providing a laser light source, disposing a voltage electrode between ground electrodes, generating laser sparks using the laser light source via laser spark gaps between the voltage electrode and the ground electrodes, and outputting pulses via one or more insulated ground connectors connected to the voltage electrode.

Field emission from carbon nanotube fibers in varying anode-cathode gap with the consideration of contact resistance

NASA Astrophysics Data System (ADS)

Zhang, Peng; Fairchild, S. B.; Back, T. C.; Luo, Yi

2017-12-01

This paper studies field emission (FE) from a single carbon nanotube (CNT) fiber with different anode-cathode (AK) gap distances. It is found that the field enhancement factor depends strongly on the finite AK gap distance, due to the combination of geometrical effects and possible fiber morphology change. The geometrical effects of AK gap distance on the field enhancement factor are confirmed using COMSOL simulations. The slope drop in the Fowler-Northeim (FN) plot of the FE data in the high voltage is related to the electrical contact resistance between the CNT fiber and the substrate. It is found that even a small series resistance to the field emitter (<30% of the emission gap impedance) can strongly modify the FE characteristics in the high voltage regime, inducing a strong deviation from the linear FN plot.

Study of electric field distorted by space charges under positive lightning impulse voltage

NASA Astrophysics Data System (ADS)

Wang, Zezhong; Geng, Yinan

2018-03-01

Actually, many insulation problems are related to electric fields. And measuring electric fields is an important research topic of high-voltage engineering. In particular, the electric field distortion caused by space charge is the basis of streamer theory, and thus quantitatively measuring the Poisson electric field caused by space charge is significant to researching the mechanism of air gap discharge. In this paper, we used our photoelectric integrated sensor to measure the electric field distribution in a 1-m rod-plane gap under positive lightning impulse voltage. To verify the reliability of this quantitative measurement, we compared the measured results with calculated results from a numerical simulation. The electric-field time domain waveforms on the axis of the 1-m rod-plane out of the space charge zone were measured with various electrodes. The Poisson electric fields generated by space charge were separated from the Laplace electric field generated by applied voltages, and the amplitudes and variations were measured for various applied voltages and at various locations. This work also supplies the feasible basis for directly measuring strong electric field under high voltage.

A consistent approach to estimate the breakdown voltage of high voltage electrodes under positive switching impulses

NASA Astrophysics Data System (ADS)

Arevalo, L.; Wu, D.; Jacobson, B.

2013-08-01

The main propose of this paper is to present a physical model of long air gap electrical discharges under positive switching impulses. The development and progression of discharges in long air gaps are attributable to two intertwined physical phenomena, namely, the leader channel and the streamer zone. Experimental studies have been used to develop empirical and physical models capable to represent the streamer zone and the leader channel. The empirical ones have led to improvements in the electrical design of high voltage apparatus and insulation distances, but they cannot take into account factors associated with fundamental physics and/or the behavior of materials. The physical models have been used to describe and understand the discharge phenomena of laboratory and lightning discharges. However, because of the complex simulations necessary to reproduce real cases, they are not in widespread use in the engineering of practical applications. Hence, the aim of the work presented here is to develop a model based on physics of the discharge capable to validate and complement the existing engineering models. The model presented here proposes a new geometrical approximation for the representation of the streamer and the calculation of the accumulated electrical charge. The model considers a variable streamer region that changes with the temporal and spatial variations of the electric field. The leader channel is modeled using the non local thermo-equilibrium equations. Furthermore, statistical delays before the inception of the first corona, and random distributions to represent the tortuous nature of the path taken by the leader channel were included based on the behavior observed in experimental tests, with the intention of ensuring the discharge behaved in a realistic manner. For comparison purposes, two different gap configurations were simulated. A reasonable agreement was found between the physical model and the experimental test results.

Two-dimensional numerical study of two counter-propagating helium plasma jets in air at atmospheric pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Wen; Sang, Chaofeng; Wang, Dezhen, E-mail: wangdez@dlut.edu.cn

In this paper, a computational study of two counter-propagating helium plasma jets in ambient air is presented. A two-dimensional fluid model is applied to investigate the physical processes of the two plasma jets interaction (PJI) driven by equal and unequal voltages, respectively. In all studied cases, the PJI results in a decrease of both plasma bullets propagation velocity. When the two plasma jets are driven by equal voltages, they never merge but rather approach each other around the middle of the gas gap at a minimum approach distance, and the minimal distance decreases with the increase of both the appliedmore » voltages and initial electron density, but increases with the increase of the relative permittivity. When the two plasma jets are driven by unequal voltages, we observe the two plasma jets will merge at the position away from the middle of the gas gap. The effect of applied voltage difference on the PJI is also studied.« less

Quasiparticle conductance-voltage characteristics for break junctions involving d-wave superconductors: charge-density-wave effects.

PubMed

Ekino, T; Gabovich, A M; Suan Li, Mai; Szymczak, H; Voitenko, A I

2017-12-20

Quasiparticle tunnel conductance-voltage characteristics (CVCs), [Formula: see text], were calculated for break junctions (BJs) made up of layered d-wave superconductors partially gapped by charge-density waves (CDWs). The current is assumed to flow in the ab-plane of electrodes. The influence of CDWs is analyzed by comparing the resulting CVCs with CVCs calculated for BJs made up of pure d-wave superconductors with relevant parameters. The main CDW-effects were found to be the appearance of new CVC peculiarities and the loss of CVC symmetry with respect to the V-sign. Tunnel directionality was shown to be one of the key factors in the formation of [Formula: see text] dependences. In particular, the orientation of electrodes with respect to the current channel becomes very important. As a result, [Formula: see text] can acquire a large variety of forms similar to those for tunnel junctions between superconductors with s-wave, d-wave, and mixed symmetry of their order parameters. The diversity of peculiarities is especially striking at finite temperatures. In the case of BJs made up of pure d-wave superconductors, the resulting CVC can include a two-peak gap-driven structure. The results were compared with the experimental BJ data for a number of high-T c oxides. It was shown that the large variety of the observed current-voltage characteristics can be interpreted in the framework of our approach. Thus, quasiparticle tunnel currents in the ab-plane can be used as an additional mean to detect CDWs competing with superconductivity in cuprates or other layered superconductors.

Quasiparticle conductance-voltage characteristics for break junctions involving d-wave superconductors: charge-density-wave effects

NASA Astrophysics Data System (ADS)

Ekino, T.; Gabovich, A. M.; Li, Mai Suan; Szymczak, H.; Voitenko, A. I.

2017-12-01

Quasiparticle tunnel conductance-voltage characteristics (CVCs), G(V) , were calculated for break junctions (BJs) made up of layered d-wave superconductors partially gapped by charge-density waves (CDWs). The current is assumed to flow in the ab-plane of electrodes. The influence of CDWs is analyzed by comparing the resulting CVCs with CVCs calculated for BJs made up of pure d-wave superconductors with relevant parameters. The main CDW-effects were found to be the appearance of new CVC peculiarities and the loss of CVC symmetry with respect to the V-sign. Tunnel directionality was shown to be one of the key factors in the formation of G(V) dependences. In particular, the orientation of electrodes with respect to the current channel becomes very important. As a result, G(V) can acquire a large variety of forms similar to those for tunnel junctions between superconductors with s-wave, d-wave, and mixed symmetry of their order parameters. The diversity of peculiarities is especially striking at finite temperatures. In the case of BJs made up of pure d-wave superconductors, the resulting CVC can include a two-peak gap-driven structure. The results were compared with the experimental BJ data for a number of high-T c oxides. It was shown that the large variety of the observed current-voltage characteristics can be interpreted in the framework of our approach. Thus, quasiparticle tunnel currents in the ab-plane can be used as an additional mean to detect CDWs competing with superconductivity in cuprates or other layered superconductors.

A No-Arc DC Circuit Breaker Based on Zero-Current Interruption

NASA Astrophysics Data System (ADS)

Xiang, Xuewei; Chai, Jianyun; Sun, Xudong

2017-05-01

A dc system has no natural current zero-crossing point, so a dc arc is more difficult to extinguish than an ac arc. In order to effectively solve the problem of the dc arc, this paper proposes a dc circuit breaker (DCCB) capable of implementing a no-arc interruption. The proposed DCCB includes a main branch consisting of a mechanical switch, a diode and a current-limiting inductor, a semi-period resonance circuit consisting of a diode, an inductor and a capacitor, and a buffer branch consisting of a capacitor, a thyristor and a resistor. The mechanical switch is opened in a zero-current state, and the overvoltage caused by the counter electromotive force of the inductor does not exist. Meanwhile, the capacitor has a buffering effect on the voltage. The rising of the voltage of the mechanical switch is slower than the rising of the insulating strength of a contact gap of the mechanical switch, resulting in the contact gap not able to be broken down. Thus, the arc cannot be generated. The simulation results show that the proposed DCCB does not generate the arc in the interruption process, the rise rate of the short circuit current can be effectively limited, and the short circuit fault point can be rapidly isolated from the dc power supply.

Contribution of the backstreaming ions to the self-magnetic pinch (SMP) diode current

NASA Astrophysics Data System (ADS)

Mazarakis, Michael G.; Bennett, Nichelle; Cuneo, Michael E.; Fournier, Sean D.; Johnston, Mark D.; Kiefer, Mark L.; Leckbee, Joshua J.; Nielsen, Dan S.; Oliver, Bryan V.; Sceiford, Matthew E.; Simpson, Sean C.; Renk, Timothy J.; Ruiz, Carlos L.; Webb, Timothy J.; Ziska, Derek; Droemer, Darryl W.; Gignac, Raymond E.; Obregon, Robert J.; Wilkins, Frank L.; Welch, Dale R.

2018-04-01

The results presented here were obtained with a self-magnetic pinch (SMP) diode mounted at the front high voltage end of the RITS accelerator. RITS is a Self-Magnetically Insulated Transmission Line (MITL) voltage adder that adds the voltage pulse of six 1.3 MV inductively insulated cavities. The RITS driver together with the SMP diode has produced x-ray spots of the order of 1 mm in diameter and doses adequate for the radiographic imaging of high area density objects. Although, through the years, a number of different types of radiographic electron diodes have been utilized with SABER, HERMES III and RITS accelerators, the SMP diode appears to be the most successful and simplest diode for the radiographic investigation of various objects. Our experiments had two objectives: first to measure the contribution of the back-streaming ion currents emitted from the anode target and second to try to evaluate the energy of those ions and hence the Anode-Cathode (A-K) gap actual voltage. In any very high voltage inductive voltage adder utilizing MITLs to transmit the power to the diode load, the precise knowledge of the accelerating voltage applied on the A-K gap is problematic. This is even more difficult in an SMP diode where the A-K gap is very small (˜1 cm) and the diode region very hostile. The accelerating voltage quoted in the literature is from estimates based on the measurements of the anode and cathode currents of the MITL far upstream from the diode and utilizing the para-potential flow theories and inductive corrections. Thus, it would be interesting to have another independent measurement to evaluate the A-K voltage. The diode's anode is made of a number of high-Z metals in order to produce copious and energetic flash x-rays. It was established experimentally that the back-streaming ion currents are a strong function of the anode materials and their stage of cleanness. We have measured the back-streaming ion currents emitted from the anode and propagating through a hollow cathode tip for various diode configurations and different techniques of target cleaning treatment: namely, heating at very high temperatures with DC and pulsed current, with RF plasma cleaning, and with both plasma cleaning and heating. We have also evaluated the A-K gap voltage by energy filtering technique. Experimental results in comparison with LSP simulations are presented.

Effect of secondary electron emission on subnanosecond breakdown in high-voltage pulse discharge

NASA Astrophysics Data System (ADS)

Schweigert, I. V.; Alexandrov, A. L.; Gugin, P.; Lavrukhin, M.; Bokhan, P. A.; Zakrevsky, Dm E.

2017-11-01

The subnanosecond breakdown in open discharge may be applied for producing superfast high power switches. Such fast breakdown in high-voltage pulse discharge in helium was explored both in experiment and in kinetic simulations. The kinetic model of electron avalanche development was developed using PIC-MCC technique. The model simulates motion of electrons, ions and fast helium atoms, appearing due to ions scattering. It was shown that the mechanism responsible for ultra-fast breakdown development is the electron emission from cathode. The photoemission and emission by ions or fast atoms impact is the main reason of current growth at the early stage of breakdown, but at the final stage, when the voltage on discharge gap drops, the secondary electron emission (SEE) is responsible for subnanosecond time scale of current growth. It was also found that the characteristic time of the current growth τS depends on the SEE yield of the cathode material. Three types of cathode material (titanium, SiC, and CuAlMg-alloy) were tested. It is shown that in discharge with SiC and CuAlMg-alloy cathodes (which have enhanced SEE) the current can increase with a subnanosecond characteristic time as small as τS = 0.4 ns, for the pulse voltage amplitude of 5- 12 kV..

Inexpensive system protects megawatt resistance-heating furnace against high-voltage surges

NASA Technical Reports Server (NTRS)

Stearns, E. J.

1971-01-01

Coolant gas extinguishes arcing across the break in a heater element. Air-gap shunt which bypasses high voltage impressed across the circuit prevents damage if the resistance elements break and open the inductive circuit.

Working group report on advanced high-voltage high-power and energy-storage space systems

NASA Technical Reports Server (NTRS)

Cohen, H. A.; Cooke, D. L.; Evans, R. W.; Hastings, D.; Jongeward, G.; Laframboise, J. G.; Mahaffey, D.; Mcintyre, B.; Pfizer, K. A.; Purvis, C.

1986-01-01

Space systems in the future will probably include high-voltage, high-power energy-storage and -production systems. Two such technologies are high-voltage ac and dc systems and high-power electrodynamic tethers. The working group identified several plasma interaction phenomena that will occur in the operation of these power systems. The working group felt that building an understanding of these critical interaction issues meant that several gaps in our knowledge had to be filled, and that certain aspects of dc power systems have become fairly well understood. Examples of these current collection are in quiescent plasmas and snap over effects. However, high-voltage dc and almost all ac phenomena are, at best, inadequately understood. In addition, there is major uncertainty in the knowledge of coupling between plasmas and large scale current flows in space plasmas. These gaps in the knowledge are addressed.

Achievement and improvement of the JT-60U negative ion source for JT-60 Super Advanced (invited)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kojima, A.; Hanada, M.; Tanaka, Y.

2010-02-15

Developments of the large negative ion source have been progressed in the high-energy, high-power, and long-pulse neutral beam injector for JT-60 Super Advanced. Countermeasures have been studied and tested for critical issues of grid heat load and voltage holding capability. As for the heat load of the acceleration grids, direct interception of D{sup -} ions was reduced by adjusting the beamlet steering. As a result, the heat load was reduced below an allowable level for long-pulse injections. As for the voltage holding capability, local electric field was mitigated by tuning gap lengths between large-area acceleration grids in the accelerator. Asmore » a result, the voltage holding capability was improved up to the rated value of 500 kV. To investigate the voltage holding capability during beam acceleration, the beam acceleration test is ongoing with new extended gap.« less

A simple high-voltage high current spark gap with subnanosecond jitter triggered by femtosecond laser filamentation

NASA Astrophysics Data System (ADS)

Arantchouk, L.; Houard, A.; Brelet, Y.; Carbonnel, J.; Larour, J.; André, Y.-B.; Mysyrowicz, A.

2013-04-01

We describe a simple, sturdy, and reliable spark gap operating with air at atmospheric pressure and able to switch currents in excess of 10 kA with sub-nanosecond jitter. The spark gap is remotely triggered by a femtosecond laser filament.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Quennet, Marcel, E-mail: marcel.quennet@fu-berlin.de; Institut für Chemie und Biochemie, Freie Universität Berlin, Takustraße 3, 14195 Berlin; Ritscher, Anna

In this work the Cu/Zn order-disorder transition in Cu{sub 2}ZnSnS{sub 4} kesterites on Wyckoff positions 2c and 2d was investigated by a structural and electronic analysis in theory and experiment. For experimental investigations stoichiometric samples with different Cu/Zn order, annealed in the temperature range of 473–623 K and afterwards quenched, were used. The optical gaps were determined using the Derivation of Absorption Spectrum Fitting (DASF) method. Furthermore, the order-disorder transition was examined by DFT calculations for a closer analysis of the origins of the reduced band gap, showing a good agreement with experimental data with respect to structural and electronicmore » properties. Our studies show a slight increase of lattice parameter c in the kesterite lattice with increasing disorder. Additionally, a reduced band gap was observed with increasing disorder, which is an effect of newly occurring binding motifs in the disordered kesterite structure. - Highlights: • Experimental and theoretical investigation on the order-disorder transition in kesterites. • Slight enlargements of lattice constants due to disorder in experiment and theory. • Strong band gap fluctuations with decreasing order. • Electronic structure deviations due to changing binding motifs. • Disorder as possible main source of low open-circuit voltages.« less

Studies of the Plasma Triggering Mechanism of Inverse Pinch Switch

DTIC Science & Technology

1993-11-10

plasma - focus driven plasma-puff was also discussed in comparison with the hypocycloidal pinch plasma-puff triggering. The main discharge of inverse pinch switch with plasma - focus driven plasma-puff trigger is found to be more azimuthally uniform than that with hypocycloidal pinch plasma-puff trigger in a gas pressure region between 80 mTorr and 1 Torr. A comparative study of the INPIStron and a spark gap also reveals that the INPIStron with a low impedance Z = 9 ohms can transfer a high voltage pulse with a superior pulse-shape fidelity over that with

Homogeneous dielectric barrier discharges in atmospheric air and its influencing factor

NASA Astrophysics Data System (ADS)

Ran, Junxia; Li, Caixia; Ma, Dong; Luo, Haiyun; Li, Xiaowei

2018-03-01

The stable homogeneous dielectric barrier discharge (DBD) is obtained in atmospheric 2-3 mm air gap. It is generated using center frequency 1 kHz high voltage power supply between two plane parallel electrodes with specific alumina ceramic plates as the dielectric barriers. The discharge characteristics are studied by a measurement of its electrical discharge parameters and observation of its light emission phenomena. The results show that a large single current pulse of about 200 μs duration appearing in each voltage pulse, and its light emission is radially homogeneous and covers the entire surface of the two electrodes. The homogeneous discharge generated is a Townsend discharge during discharge. The influences of applied barrier, its thickness, and surface roughness on the transition of discharge modes are studied. The results show that it is difficult to produce a homogeneous discharge using smooth plates or alumina plate surface roughness Ra < 100 nm even at a 1 mm air gap. If the alumina plate is too thin, the discharge also transits to filamentary discharge. If it is too thick, the discharge is too weak to observe. With the increase of air gap distance and applied voltage, the discharge can also transit from a homogeneous mode to a filamentary mode. In order to generate stable and homogeneous DBD at a larger air gap, proper dielectric material, dielectric thickness, and dielectric surface roughness should be used, and proper applied voltage amplitude and frequency should also be used.

LOW VOLTAGE 14 Mev NEUTRON SOURCE

DOEpatents

Little, R.N. Jr.; Graves, E.R.

1959-09-29

An apparatus yielding high-energy neutrons at the rate of 10/sup 8/ or more per second by the D,T or D,D reactions is described. The deuterium gas filling is ionized by electrons emitted from a filament, and the resulting ions are focused into a beam and accelerated against a fixed target. The apparatus is built in accordance with the relationship V/sub s/ = A--B log pd, where V/sub s/ is the sparking voltage, p the gas pressure, and d the gap length between the high voltage electrodes. Typical parameters to obtain the high neutron yields are 55 to 80 kv, 0.5 to 7.0 ma beam current, 5 to 12 microns D/sub 2/, and a gap length of 1 centimeter.

Structural basis for the selective permeability of channels made of communicating junction proteins

PubMed Central

Ek-Vitorin, Jose F.; Burt, Janis M.

2012-01-01

The open state(s) of gap junction channels is evident from their permeation by small ions in response to an applied intercellular (transjunctional/transchannel) voltage gradient. That an open channel allows variable amounts of current to transit from cell-to-cell in the face of a constant intercellular voltage difference indicates channel open/closing can be complete or partial. The physiological significance of such open state options is, arguably, the main concern of junctional regulation. Because gap junctions are permeable to many substances, it is sensible to inquire whether and how each open state influences the intercellular diffusion of molecules as valuable as, but less readily detected than current-carrying ions. Presumably, structural changes perceived as shifts in channel conductivity would significantly alter the transjunctional diffusion of molecules whose limiting diameter approximates the pore’s limiting diameter. Moreover, changes in junctional permeability to some molecules might occur without evident changes in conductivity, either at macroscopic or single channel level. Open gap junction channels allow the exchange of cytoplasmic permeants between contacting cells by simple diffusion. The identity of such permeants, and the functional circumstances and consequences of their junctional exchange presently constitute the most urgent (and demanding) themes of the field. Here, we consider the necessity for regulating this exchange, the possible mechanism(s) and structural elements likely involved in such regulation, and how regulatory phenomena could be perceived as changes in chemical vs. electrical coupling; an overall reflection on our collective knowledge of junctional communication is then applied to suggest new avenues of research. PMID:22342665

Subnanosecond breakdown development in high-voltage pulse discharge: Effect of secondary electron emission

NASA Astrophysics Data System (ADS)

Alexandrov, A. L.; Schweigert, I. V.; Zakrevskiy, Dm. E.; Bokhan, P. A.; Gugin, P.; Lavrukhin, M.

2017-10-01

A subnanosecond breakdown in high-voltage pulse discharge may be a key tool for superfast commutation of high power devices. The breakdown in high-voltage open discharge at mid-high pressure in helium was studied in experiment and in kinetic simulations. The kinetic model of electron avalanche development was constructed, based on PIC-MCC simulations, including dynamics of electrons, ions and fast helium atoms, produced by ions scattering. Special attention was paid to electron emission processes from cathode, such as: photoemission by Doppler-shifted resonant photons, produced in excitation processes involving fast atoms; electron emission by ions and fast atoms bombardment of cathode; the secondary electron emission (SEE) by hot electrons from bulk plasma. The simulations show that the fast atoms accumulation is the main reason of emission growth at the early stage of breakdown, but at the final stage, when the voltage on plasma gap diminishes, namely the SEE is responsible for subnanosecond rate of current growth. It was shown that the characteristic time of the current growth can be controlled by the SEE yield. The influence of SEE yield for three types of cathode material (titanium, SiC, and CuAlMg-alloy) was tested. By changing the pulse voltage amplitude and gas pressure, the area of existence of subnanosecond breakdown is identified. It is shown that in discharge with SiC and CuAlMg-alloy cathodes (which have enhanced SEE) the current can increase with a subnanosecond characteristic time value as small as τs = 0.4 ns, for the pulse voltage amplitude of 5÷12 kV. An increase of gas pressure from 15 Torr to 30 Torr essentially decreases the time of of current front growth, whereas the pulse voltage variation weakly affects the results.

Aconitum and Delphinium sp. Alkaloids as Antagonist Modulators of Voltage-Gated Na+ Channels. AM1/DFT Electronic Structure Investigations and QSAR Studies

PubMed Central

Turabekova, Malakhat A.; Rasulev, Bakhtiyor F.; Levkovich, Mikhail G.; Abdullaev, Nasrulla D.; Leszczynski, Jerzy

2015-01-01

Early pharmacological studies of Aconitum and Delphinium sp. alkaloids suggested that these neurotoxins act at site 2 of voltage-gated Na+ channel and allosterically modulate its function. Understanding structural requirements for these compounds to exhibit binding activity at voltage-gated Na+ channel has been important in various fields. This paper reports quantum-chemical studies and quantitative structure-activity relationships (QSARs) based on a total of 65 natural alkaloids from two plant species, which includes both blockers and openers of sodium ion channel. A series of 18 antagonist alkaloids (9 blockers and 9 openers) have been studied using AM1 and DFT computational methods in order to reveal their structure-activity (structure-toxicity) relationship at electronic level. An examination of frontier orbitals obtained for ground and protonated forms of the compounds revealed that HOMOs and LUMOs were mainly represented by nitrogen atom and benzyl/benzoylester orbitals with –OH and –OCOCH3 contributions. The results obtained from this research have confirmed the experimental findings suggesting that neurotoxins acting at type 2 receptor site of voltage-dependent sodium channel are activators and blockers with common structural features and differ only in efficacy. The energetic tendency of HOMO-LUMO energy gap can probably distinguish activators and blockers that have been observed. Genetic Algorithm with Multiple Linear Regression Analysis (GA-MLRA) technique was also applied for the generation of two-descriptor QSAR models for the set of 65 blockers. Additionally to the computational studies, the HOMO-LUMO gap descriptor in each obtained QSAR model has confirmed the crucial role of charge transfer in receptor-ligand interactions. A number of other descriptors such as logP, IBEG, nNH2, nHDon, nCO have been selected as complementary ones to LUMO and their role in activity alteration has also been discussed. PMID:18201930

Effects of nanoscale vacuum gap on photon-enhanced thermionic emission devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yuan; Liao, Tianjun; Zhang, Yanchao

2016-01-28

A new model of the photon-enhanced thermionic emission (PETE) device with a nanoscale vacuum gap is established by introducing the quantum tunneling effect and the image force correction. Analytic expressions for both the thermionic emission and tunneling currents are derived. The electron concentration and the temperature of the cathode are determined by the particle conservation and energy balance equations. The effects of the operating voltage on the maximum potential barrier, cathode temperature, electron concentration and equilibrium electron concentration of the conduction band, and efficiency of the PETE device are discussed in detail for different given values of the vacuum gapmore » length. The influence of the band gap of the cathode and flux concentration on the efficiency is further analyzed. The maximum efficiency of the PETE and the corresponding optimum values of the band gap and the operating voltage are determined. The results obtained here show that the efficiency of the PETE device can be significantly improved by employing a nanoscale vacuum gap.« less

Impulse noise generator--design and operation.

PubMed

Brinkmann, H

1991-01-01

In the seventies PFANDER (Pfander, 1975) proposed a screening test with an impulse noise simulator to check the particular responsivity of soldiers on vulnerability of the inner ear concerning the impulse noise-induced hearing loss. According to a system developed at the University of Oldenburg (Germany) (Klug & Radek, 1987), we have constructed an impulse noise generator designed for our specific requirements that will be presented. The simulator consists of an electrical ignited impulse noise spark gap which is supplied by a 3.5 kV high voltage source. At a distance of 1.10 m from the center of the impulse noise spark gap a peak pressure level of 155 dB with a C-Duration (Pfander, 1975) of .2 msec and with the main energy in the frequency range from 1 kHz to 2 kHz was good reproducible. It would be preferable to shift the impulse noise spectrum to lower frequencies but experimental effort has failed so far.

Modeling of Spark Gap Performance

DTIC Science & Technology

1983-06-01

MODELING OF SPARK GAP PERFORMANCE* A. L. Donaldson, R. Ness, M. Hagler, M. Kristiansen Department of Electrical Engineering and L. L. Hatfield...gas pressure, and chaJ:ging rate on the voltage stability of high energy spark gaps is discussed. Implications of the model include changes in...an extremely useful, and physically reasonable framework, from which the properties of spark gaps under a wide variety of experimental conditions

Design of single-winding energy-storage reactors for dc-to-dc converters using air-gapped magnetic-core structures

NASA Technical Reports Server (NTRS)

Ohri, A. K.; Wilson, T. G.; Owen, H. A., Jr.

1977-01-01

A procedure is presented for designing air-gapped energy-storage reactors for nine different dc-to-dc converters resulting from combinations of three single-winding power stages for voltage stepup, current stepup and voltage stepup/current stepup and three controllers with control laws that impose constant-frequency, constant transistor on-time and constant transistor off-time operation. The analysis, based on the energy-transfer requirement of the reactor, leads to a simple relationship for the required minimum volume of the air gap. Determination of this minimum air gap volume then permits the selection of either an air gap or a cross-sectional core area. Having picked one parameter, the minimum value of the other immediately leads to selection of the physical magnetic structure. Other analytically derived equations are used to obtain values for the required turns, the inductance, and the maximum rms winding current. The design procedure is applicable to a wide range of magnetic material characteristics and physical configurations for the air-gapped magnetic structure.

Intrinsic non-radiative voltage losses in fullerene-based organic solar cells

NASA Astrophysics Data System (ADS)

Benduhn, Johannes; Tvingstedt, Kristofer; Piersimoni, Fortunato; Ullbrich, Sascha; Fan, Yeli; Tropiano, Manuel; McGarry, Kathryn A.; Zeika, Olaf; Riede, Moritz K.; Douglas, Christopher J.; Barlow, Stephen; Marder, Seth R.; Neher, Dieter; Spoltore, Donato; Vandewal, Koen

2017-06-01

Organic solar cells demonstrate external quantum efficiencies and fill factors approaching those of conventional photovoltaic technologies. However, as compared with the optical gap of the absorber materials, their open-circuit voltage is much lower, largely due to the presence of significant non-radiative recombination. Here, we study a large data set of published and new material combinations and find that non-radiative voltage losses decrease with increasing charge-transfer-state energies. This observation is explained by considering non-radiative charge-transfer-state decay as electron transfer in the Marcus inverted regime, being facilitated by a common skeletal molecular vibrational mode. Our results suggest an intrinsic link between non-radiative voltage losses and electron-vibration coupling, indicating that these losses are unavoidable. Accordingly, the theoretical upper limit for the power conversion efficiency of single-junction organic solar cells would be reduced to about 25.5% and the optimal optical gap increases to 1.45-1.65 eV, that is, 0.2-0.3 eV higher than for technologies with minimized non-radiative voltage losses.

Development of high temperature gallium phosphide rectifiers

NASA Technical Reports Server (NTRS)

Craford, M. G.; Keune, D. L.

1972-01-01

Large area high performance, GaP rectifiers were fabricated by means of Zn diffusion into vapor phase epitaxial GaP. Devices with an active area of 0.01 sq cm typically exhibit forward voltages of 3 volts for a bias current of 1 ampere and have reverse breakdown voltages of 300 volts for temperatures from 27 C to 400 C. Typical device reverse saturation current at a reverse bias of 150 volts is less than 10 to the minus 9th power amp at 27 C and less than 0.000050 amp at 400 C.

Generation of runaway electrons and X-ray emission during breakdown of atmospheric-pressure air by voltage pulses with an ∼0.5-μs front duration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kostyrya, I. D.; Tarasenko, V. F., E-mail: VFT@loi.hcei.tsc.ru

2015-03-15

Results are presented from experiments on the generation of runaway electron beams and X-ray emission in atmospheric-pressure air by using voltage pulses with an ∼0.5-μs front duration. It is shown that the use of small-curvature-radius spherical cathodes (or other cathodes with small curvature radii) decreases the intensity of the runaway electron beam and X-ray emission. It is found that, at sufficiently high voltages at the electrode gap (U{sub m} ∼ 100 kV), the gap breakdown, the formation of a spark channel, and the generation of a runaway electron beam occur over less than 10 ns. At high values of U{submore » m} behind the anode that were reached by increasing the cathode size and the electrode gap length, a supershort avalanche electron beam with a full width at half-maximum (FWHM) of up to ∼100 ps was detected. At voltages of ∼50 kV, the second breakdown regime was revealed in which a runaway electron beam with an FWHM of ∼2 ns was generated, whereas the FWHM of the X-ray pulse increased to ∼100 ns. It is established that the energy of the bulk of runaway electrons decreases with increasing voltage front duration and is ⩽30 keV in the first regime and ⩽10 keV in the second regime.« less

Remote Field Eddy Curent Signal Modeling for the Gap Measurement of Neighboring Tubes

NASA Astrophysics Data System (ADS)

Jung, H. K.; Lee, D. H.; Lee, Y. S.

2005-04-01

The fuel channels in the Canadian Deuterium Uranium (CANDU) reactor consist of the coaxial pressure tube (PT) and the calandria tube (CT). The Liquid injection nozzle (LIN) is cross aligned with the fuel channel to control the reactor by injecting poison. For a safe operation, the gap between the LIN and CT should be maintained in order to prevent a contact of the neighboring tubes. The remote field eddy current (RFEC) method was applied to measure the gap between a nonmagnetic Zircaloy-2 liquid injection nozzle (LIN) and a Zircaloy-2 calandria tube. Under the condition of inserting the RFEC probe into the coaxial tubes and of crossing a LIN above or under the CT, the modeling of a LIN signal is needed to check the possibility of a gap measurement. The Volume Integral Code S/W which covers the axi-symmetric 3D configuration has been very rarely applied to obtain a LIN signal. This problem was solved by assuming a LIN as a flaw which can be described as a complete 3D object. This simulated LIN signal was verified by performing the laboratory experiment. The gap between the LIN and CT can be correlated with the amplitude of the LIN signals in the voltage plane. Typical noises in the fuel channel were the relative constriction, the change in the pressure tube diameter (fill-factor), thickness variation, and so on. These noise signals were simulated by using the modeling and were analyzed by considering their dependency on the phase angle and amplitude of the voltage plane in order to separate the gap signal from them. It could be concluded that the voltage plane analysis of the simulated RFEC signals were effective for obtaining the gap measurement of the neighboring tube.

Electromechanical x-ray generator

DOEpatents

Watson, Scott A; Platts, David; Sorensen, Eric B

2016-05-03

An electro-mechanical x-ray generator configured to obtain high-energy operation with favorable energy-weight scaling. The electro-mechanical x-ray generator may include a pair of capacitor plates. The capacitor plates may be charged to a predefined voltage and may be separated to generate higher voltages on the order of hundreds of kV in the AK gap. The high voltage may be generated in a vacuum tube.

High PRF high current switch

DOEpatents

Moran, Stuart L.; Hutcherson, R. Kenneth

1990-03-27

A triggerable, high voltage, high current, spark gap switch for use in pu power systems. The device comprises a pair of electrodes in a high pressure hydrogen environment that is triggered by introducing an arc between one electrode and a trigger pin. Unusually high repetition rates may be obtained by undervolting the switch, i.e., operating the trigger at voltages much below the self-breakdown voltage of the device.

Improvement of voltage holding capability in the 500 keV negative ion source for JT-60SA.

PubMed

Tanaka, Y; Hanada, M; Kojima, A; Akino, N; Shimizu, T; Ohshima, K; Inoue, T; Watanabe, K; Taniguchi, M; Kashiwagi, M; Umeda, N; Tobari, H; Grisham, L R

2010-02-01

Voltage holding capability of JT-60 negative ion source that has a large electrostatic negative ion accelerator with 45 cm x 1.1 m acceleration grids was experimentally examined and improved to realize 500 keV, 22 A, and 100 s D- ion beams for JT-60 Super Advanced. The gap lengths in the acceleration stages were extended to reduce electric fields in a gap between the large grids and at the corner of the support flanges from the original 4-5 to 3-4 kV/mm. As a result, the voltage holding capability without beam acceleration has been successfully improved from 400 to 500 kV. The pulse duration to hold 500 kV reached 40 s of the power supply limitation.

Magnetic force driven magnetoelectric effect in bi-cantilever composites

NASA Astrophysics Data System (ADS)

Zhang, Ru; Wu, Gaojian; Zhang, Ning

2017-12-01

The magnetic force driven magnetoelectric (ME) effect in bi-cantilever Mn-Zn-Ferrite /PZT composites is presented. Compared with single cantilever, the ME voltage coefficient in bi-cantilever composite is a little lower and the resonance frequency is higher, but the bi-cantilever structure is advantageous for integration. When the magnetic gap is 3 mm, the ME voltage coefficient can achieve 6.2 Vcm-1Oe-1 at resonance under optimum bias field Hm=1030 Oe; when the magnetic gap is 1.5 mm, the ME voltage coefficient can get the value as high as 4.4 Vcm-1Oe-1 under much lower bias field H=340 Oe. The stable ME effect in bi-cantilever composites has important potential application in the design of new type ME device.

Pseudo-spark switch (PSS) characteristics under different operation conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hamad, B. H., E-mail: dr.bassmahussain@gmail.com; Ahmad, A. K., E-mail: ahmad.kamal@sc.nahrainuniv.edu.iq; Lateef, K. H., E-mail: kamalhlatif@yahoo.com

2016-08-15

The present paper concentrates on the characteristics of the pseudospark switch (PSS) designed in a previous work. The special characteristics of PSS make it a replacement for other high voltage switches such as thyratrons and ordinary high-pressure spark gaps. PSS is characterized by short rise time and small jitter time. The pseudo park chamber consists of two hollow cylindrical electrodes made of a stainless steel material (type 306L) separated by an insulator. The insulator used in our design is a glazed ceramic 70 mm in diameter and 3.5 mm in thickness. A PSS with an anode voltage of 29.2 kV, and a currentmore » of 3.6 kA and 11 ns rise time was achieved and used successfully at a repetition rate of about 2.2 kHz. A simple trigger circuit designed, built, and used effectively reaching more than 1.56 kV trigger pulse which is sufficient to ignite the argon gas inside the cathode to cause a breakdown. A non-inductive dummy load is designed to be a new technique to find the accurate value of the PSS inductance. A jitter time of ±10 ns pulses is observed to occur in a reliable manner for more than 6 h of continuous operation. In this research, the important parameters of this switch like rise time, peak current, and anode voltage were studied at various values of charging capacitance. The lifetime of this system is depending on the kind of the electrode material and on the type of insulation material in the main gap of the pseudospark switch.« less

Study of short atmospheric pressure dc glow microdischarge in air

NASA Astrophysics Data System (ADS)

Kudryavtsev, Anatoly; Bogdanov, Eugene; Chirtsov, Alexander; Emelin, Sergey

2011-10-01

The results of experiments and simulations of short (without positive column) atmospheric pressure dc glow discharge in air are presented. We used metal steel electrodes with a gap of 5-100 microns. The experimental voltage-current characteristic's (VAC) have a constant or slightly increasing form at low gap. The most stable microdischarges were burning with a flat cathode and rounded anode, when the length of the discharge is automatically established near the minimum of the Paschen curve by changing their binding on the anode. In this case microdischarge was stable and it had growing VAC. For simulations we used 2D fluid model with kinetic description of electrons. We solved the balance equations for the vibrationally- and the electronically-excited states of a nitrogen and oxygen molecules; nitrogen and oxygen atoms; ozone molecule; and different nitrogen and oxygen ions with different plasmochemical reactions between them. Simulations predicted the main regions of the dc glow discharges including cathode and anode sheath and plasma of negative glow, Faraday dark space and transition region. Gas heating plays an important role in shaping the discharge profiles. The results of experiments and simulations of short (without positive column) atmospheric pressure dc glow discharge in air are presented. We used metal steel electrodes with a gap of 5-100 microns. The experimental voltage-current characteristic's (VAC) have a constant or slightly increasing form at low gap. The most stable microdischarges were burning with a flat cathode and rounded anode, when the length of the discharge is automatically established near the minimum of the Paschen curve by changing their binding on the anode. In this case microdischarge was stable and it had growing VAC. For simulations we used 2D fluid model with kinetic description of electrons. We solved the balance equations for the vibrationally- and the electronically-excited states of a nitrogen and oxygen molecules; nitrogen and oxygen atoms; ozone molecule; and different nitrogen and oxygen ions with different plasmochemical reactions between them. Simulations predicted the main regions of the dc glow discharges including cathode and anode sheath and plasma of negative glow, Faraday dark space and transition region. Gas heating plays an important role in shaping the discharge profiles. This work was supported by the FZP and SPbGU

Asymptotic analysis of corona discharge from thin electrodes

NASA Technical Reports Server (NTRS)

Durbin, P. A.

1986-01-01

The steady discharge of a high-voltage corona is analyzed as a singular perturbation problem. The small parameter is the ratio of the length of the ionization region to the total gap length. By this method, current versus voltage characteristics can be calculated analytically.

Extraction of sub-gap density of states via capacitance-voltage measurement for the erasing process in a TFT charge-trapping memory

NASA Astrophysics Data System (ADS)

Chiang, Yen-Chang; Hsiao, Yang-Hsuan; Li, Jeng-Ting; Chen, Jen-Sue

2018-02-01

Charge-trapping memories (CTMs) based on zinc tin oxide (ZTO) semiconductor thin-film transistors (TFTs) can be programmed by a positive gate voltage and erased by a negative gate voltage in conjunction with light illumination. To understand the mechanism involved, the sub-gap density of states associated with ionized oxygen vacancies in the ZTO active layer is extracted from optical response capacitance-voltage (C-V) measurements. The corresponding energy states of ionized oxygen vacancies are observed below the conduction band minimum at approximately 0.5-1.0 eV. From a comparison of the fitted oxygen vacancy concentration in the CTM-TFT after the light-bias erasing operation, it is found that the pristine-erased device contains more oxygen vacancies than the program-erased device because the trapped electrons in the programmed device are pulled into the active layer and neutralized by the oxygen vacancies that are present there.

Probe Measurements of Parameters of Streamers of Nanosecond Frequency Crown Discharge

NASA Astrophysics Data System (ADS)

Ponizovskiy, A. Z.; Gosteev, S. G.

2017-12-01

Investigations of the parameters of single streamers of nanosecond frequency corona discharge, creating a voluminous low-temperature plasma in extended coaxial electrode systems, are performed. Measurements of the parameters of streamers were made by an isolated probe situated on the outer grounded electrode. Streamers were generated under the action of voltage pulses with a front of 50-300 ns, duration of 100-600 ns, and amplitude up to 100 kV at the frequency of 50-1000 Hz. The pulse voltage, the total current of the corona, current per probe, and glow in the discharge gap were recorded in the experiments. It was established that, at these parameters of pulse voltage, streamers propagate at an average strength of the electric field of 4-10 kV/cm. Increasing the pulse amplitude leads to an increase in the number of streamers hitting the probe, an increase in the average charge of the head of a streamer, and, as a consequence, an increase in the total streamer current and the energy introduced into the gas. In the intervals up to 3 cm, streamer breakdown at an average field strength of 5-10 kV/cm is possible. In longer intervals, during the buildup of voltage after generation of the main pulse, RF breakdown is observed at E av ≈ 4 kV/cm.

MRR and TWR evaluation on electrical discharge machining of Ti-6Al-4V using tungsten : copper composite electrode

NASA Astrophysics Data System (ADS)

Prasanna, J.; Rajamanickam, S.; Amith Kumar, O.; Karthick Raj, G.; Sathya Narayanan, P. V. V.

2017-05-01

In this paper Ti-6Al-4V used as workpiece material and it is keenly seen in variety of field including medical, chemical, marine, automotive, aerospace, aviation, electronic industries, nuclear reactor, consumer products etc., The conventional machining of Ti-6Al-4V is very difficult due to its distinctive properties. The Electrical Discharge Machining (EDM) is right choice of machining this material. The tungsten copper composite material is employed as tool material. The gap voltage, peak current, pulse on time and duty factor is considered as the machining parameter to analyze the machining characteristics Material Removal Rate (MRR) and Tool Wear Rate (TWR). The Taguchi method is provided to work for finding the significant parameter of EDM. It is found that for MRR significant parameters rated in the following order Gap Voltage, Pulse On-Time, Peak Current and Duty Factor. On the other hand for TWR significant parameters are listed in line of Gap Voltage, Duty Factor, Peak Current and Pulse On-Time.

Numerical investigation on the dynamics and evolution mechanisms of multiple-current-pulse behavior in homogeneous helium dielectric-barrier discharges at atmospheric pressure

NASA Astrophysics Data System (ADS)

Zhang, Yuhui; Ning, Wenjun; Dai, Dong

2018-03-01

A systematic investigation on the dynamics and evolution mechanisms of multiple-current-pulse (MCP) behavior in homogeneous dielectric barrier discharge (HDBD) is carried out via fluid modelling. Inspecting the simulation results, two typical discharge regimes, namely the MCP-Townsend regime and MCP-glow regime, are found prevailing in MCP discharges, each with distinctive electrical and dynamic properties. Moreover, the evolution of MCP behavior with external parameters altering are illustrated and explicitly discussed. It is revealed that the discharge undergoes some different stages as external parameters vary, and the discharge in each stage follows a series of distinctive pattern in morphological characteristics and evolution trends. Among those stages, the pulse number per half cycle is perceived to observe non-monotonic variations with applied voltage amplitude (Vam) and gap width (dg) increasing, and a merging effect among pulses, mainly induced by the enhanced contribution of sinusoidal component to the total current, is considered responsible for such phenomenon. The variation of incipient discharge peak phase (Φpm) is dominated by the value of Vam as well as the proportion of total applied voltage that drops across the gas gap. Moreover, an abnormal, dramatic elevation in Jpm with dg increasing is observed, which could be evinced by the strengthened glow discharge structure and therefore enhanced space charge effect.

Acceleration of 500 keV Negative Ion Beams By Tuning Vacuum Insulation Distance On JT-60 Negative Ion Source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kojima, A.; Hanada, M.; Tanaka, Y.

2011-09-26

Acceleration of a 500 keV beam up to 2.8 A has been achieved on a JT-60U negative ion source with a three-stage accelerator by overcoming low voltage holding which is one of the critical issues for realization of the JT-60SA ion source. In order to improve the voltage holding, preliminary voltage holding tests with small-size grids with uniform and locally intense electric fields were carried out, and suggested that the voltage holding was degraded by both the size and local electric field effects. Therefore, the local electric field was reduced by tuning gap lengths between the large size grids andmore » grid support structures of the accelerator. Moreover, a beam radiation shield which limited extension of the minimum gap length was also optimized so as to reduce the local electric field while maintaining the shielding effect. These modifications were based on the experiment results, and significantly increased the voltage holding from <150 kV/stage for the original configuration to 200 kV/stage. These techniques for improvement of voltage holding should also be applicable to other large ion sources accelerators such as those for ITER.« less

Child-Langmuir flow in a planar diode filled with charged dust impurities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tang Xiaoyan; Institut fuer Theoretische Physik IV, Fakultaet fuer Physik und Astronomie, Ruhr-Universitaet Bochum, D-44870 Bochum; Shukla, Padma Kant

The Child-Langmuir (CL) flow in a planar diode in the presence of stationary charged dust particles is studied. The limiting electron current density and other diode properties, such as the electrostatic potential, the electron flow speed, and the electron number density, are calculated analytically. A comparison of the results with the case without dust impurities reveals that the diode parameters mentioned above decrease with the increase of the dust charge density. Furthermore, it is found that the classical scaling of D{sup -2} (the gap spacing D) for the CL current density remains exactly valid, while the scaling of V{sup 3/2}more » (the applied gap voltage V) can be a good approximation for low applied gap voltage and for low dust charge density.« less

Statistical data of X-ray emission from laboratory sparks

NASA Astrophysics Data System (ADS)

Kochkin, P.; Deursen, D. V.

2011-12-01

In this study we present a summary of the data of 1331 long laboratory sparks in atmospheric pressure intended for a statistical analysis. A 2 MV, 17kJ Marx generator were used to generate 1.2/52μs shape pulses positive and negative polarity. The generator was connected to a spark gap with cone-shaped electrodes. The distance between high-voltage and grounded electrodes was 1.08 meters. Breakdown voltage between electrodes was about 1MV. X-rays have been detected during the development of the discharge channel. The currents through the grounded electrode and through the high-voltage electrode were recorded separately and simultaneously with the voltage and the X-ray signal. X-rays were registered by two LaBr3(Ce+) scintillation detectors in different positions with respect to the forming discharge channel. Detector D1 was placed immediately under the grounded electrode at 15cm distance. Detector D2 was placed at horizontal distances of 143cm and 210cm, at mid-gap height. We also used lead shields of 1.5, 3, and 4 mm thickness for radiation attenuation measurements. For detector collimation we used shields up to 2 cm thickness. Also no metallic objects with pointed surfaces were present within 2 m from the spark gap. Typical plot of positive discharge presented in Figure 1a. Table 1 shows the summary of the X-ray registrations. Signal detection occurred significantly more for positive polarity discharges than for negative. This dependence was observed for both detectors. For detector D2 the probability of X-ray registration decreased proportional to 1/d2 with increasing the distance d to the breakdown gap from 1m43 to 2m10. Detailed energy spectra and time distribution of X-ray emission were obtained; see for example Fig. 1b. For both polarities of the high voltage, the X-rays only occurred when there was a current at the cathode.

Suspended few-layer graphene beam electromechanical switch with abrupt on-off characteristics and minimal leakage current

NASA Astrophysics Data System (ADS)

Kim, Sung Min; Song, Emil B.; Lee, Sejoon; Seo, Sunae; Seo, David H.; Hwang, Yongha; Candler, R.; Wang, Kang L.

2011-07-01

Suspended few-layer graphene beam electro-mechanical switches (SGSs) with 0.15 μm air-gap are fabricated and electrically characterized. The SGS shows an abrupt on/off current characteristics with minimal off current. In conjunction with the narrow air-gap, the outstanding mechanical properties of graphene enable the mechanical switch to operate at a very low pull-in voltage (VPI) of 1.85 V, which is compatible with conventional complimentary metal-oxide-semiconductor (CMOS) circuit requirements. In addition, we show that the pull-in voltage exhibits an inverse dependence on the beam length.

Role of oxygen vacancies in HfO2-based gate stack breakdown

NASA Astrophysics Data System (ADS)

Wu, X.; Migas, D. B.; Li, X.; Bosman, M.; Raghavan, N.; Borisenko, V. E.; Pey, K. L.

2010-04-01

We study the influence of multiple oxygen vacancy traps in the percolated dielectric on the postbreakdown random telegraph noise (RTN) digital fluctuations in HfO2-based metal-oxide-semiconductor transistors. Our electrical characterization results indicate that these digital fluctuations are triggered only beyond a certain gate stress voltage. First-principles calculations suggest the oxygen vacancies to be responsible for the formation of a subband in the forbidden band gap region, which affects the triggering voltage (VTRIG) for the RTN fluctuations and leads to a shrinkage of the HfO2 band gap.

Structural basis for the selective permeability of channels made of communicating junction proteins.

PubMed

Ek-Vitorin, Jose F; Burt, Janis M

2013-01-01

The open state(s) of gap junction channels is evident from their permeation by small ions in response to an applied intercellular (transjunctional/transchannel) voltage gradient. That an open channel allows variable amounts of current to transit from cell-to-cell in the face of a constant intercellular voltage difference indicates channel open/closing can be complete or partial. The physiological significance of such open state options is, arguably, the main concern of junctional regulation. Because gap junctions are permeable to many substances, it is sensible to inquire whether and how each open state influences the intercellular diffusion of molecules as valuable as, but less readily detected than current-carrying ions. Presumably, structural changes perceived as shifts in channel conductivity would significantly alter the transjunctional diffusion of molecules whose limiting diameter approximates the pore's limiting diameter. Moreover, changes in junctional permeability to some molecules might occur without evident changes in conductivity, either at macroscopic or single channel level. Open gap junction channels allow the exchange of cytoplasmic permeants between contacting cells by simple diffusion. The identity of such permeants, and the functional circumstances and consequences of their junctional exchange presently constitute the most urgent (and demanding) themes of the field. Here, we consider the necessity for regulating this exchange, the possible mechanism(s) and structural elements likely involved in such regulation, and how regulatory phenomena could be perceived as changes in chemical vs. electrical coupling; an overall reflection on our collective knowledge of junctional communication is then applied to suggest new avenues of research. This article is part of a Special Issue entitled: The Communicating junctions, roles and dysfunctions. Copyright © 2012 Elsevier B.V. All rights reserved.

Improvement of voltage holding capability in the 500 keV negative ion source for JT-60SA

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanaka, Y.; Hanada, M.; Kojima, A.

2010-02-15

Voltage holding capability of JT-60 negative ion source that has a large electrostatic negative ion accelerator with 45 cmx1.1 m acceleration grids was experimentally examined and improved to realize 500 keV, 22 A, and 100 s D{sup -} ion beams for JT-60 Super Advanced. The gap lengths in the acceleration stages were extended to reduce electric fields in a gap between the large grids and at the corner of the support flanges from the original 4-5 to 3-4 kV/mm. As a result, the voltage holding capability without beam acceleration has been successfully improved from 400 to 500 kV. The pulsemore » duration to hold 500 kV reached 40 s of the power supply limitation.« less

Functional asymmetry and plasticity of electrical synapses interconnecting neurons through a 36-state model of gap junction channel gating

PubMed Central

Kraujalis, Tadas; Maciunas, Kestutis

2017-01-01

We combined the Hodgkin–Huxley equations and a 36-state model of gap junction channel gating to simulate electrical signal transfer through electrical synapses. Differently from most previous studies, our model can account for dynamic modulation of junctional conductance during the spread of electrical signal between coupled neurons. The model of electrical synapse is based on electrical properties of the gap junction channel encompassing two fast and two slow gates triggered by the transjunctional voltage. We quantified the influence of a difference in input resistances of electrically coupled neurons and instantaneous conductance–voltage rectification of gap junctions on an asymmetry of cell-to-cell signaling. We demonstrated that such asymmetry strongly depends on junctional conductance and can lead to the unidirectional transfer of action potentials. The simulation results also revealed that voltage spikes, which develop between neighboring cells during the spread of action potentials, can induce a rapid decay of junctional conductance, thus demonstrating spiking activity-dependent short-term plasticity of electrical synapses. This conclusion was supported by experimental data obtained in HeLa cells transfected with connexin45, which is among connexin isoforms expressed in neurons. Moreover, the model allowed us to replicate the kinetics of junctional conductance under different levels of intracellular concentration of free magnesium ([Mg2+]i), which was experimentally recorded in cells expressing connexin36, a major neuronal connexin. We demonstrated that such [Mg2+]i-dependent long-term plasticity of the electrical synapse can be adequately reproduced through the changes of slow gate parameters of the 36-state model. This suggests that some types of chemical modulation of gap junctions can be executed through the underlying mechanisms of voltage gating. Overall, the developed model accounts for direction-dependent asymmetry, as well as for short- and long-term plasticity of electrical synapses. Our modeling results demonstrate that such complex behavior of the electrical synapse is important in shaping the response of coupled neurons. PMID:28384220

SLO BK Potassium Channels Couple Gap Junctions to Inhibition of Calcium Signaling in Olfactory Neuron Diversification.

PubMed

Alqadah, Amel; Hsieh, Yi-Wen; Schumacher, Jennifer A; Wang, Xiaohong; Merrill, Sean A; Millington, Grethel; Bayne, Brittany; Jorgensen, Erik M; Chuang, Chiou-Fen

2016-01-01

The C. elegans AWC olfactory neuron pair communicates to specify asymmetric subtypes AWCOFF and AWCON in a stochastic manner. Intercellular communication between AWC and other neurons in a transient NSY-5 gap junction network antagonizes voltage-activated calcium channels, UNC-2 (CaV2) and EGL-19 (CaV1), in the AWCON cell, but how calcium signaling is downregulated by NSY-5 is only partly understood. Here, we show that voltage- and calcium-activated SLO BK potassium channels mediate gap junction signaling to inhibit calcium pathways for asymmetric AWC differentiation. Activation of vertebrate SLO-1 channels causes transient membrane hyperpolarization, which makes it an important negative feedback system for calcium entry through voltage-activated calcium channels. Consistent with the physiological roles of SLO-1, our genetic results suggest that slo-1 BK channels act downstream of NSY-5 gap junctions to inhibit calcium channel-mediated signaling in the specification of AWCON. We also show for the first time that slo-2 BK channels are important for AWC asymmetry and act redundantly with slo-1 to inhibit calcium signaling. In addition, nsy-5-dependent asymmetric expression of slo-1 and slo-2 in the AWCON neuron is necessary and sufficient for AWC asymmetry. SLO-1 and SLO-2 localize close to UNC-2 and EGL-19 in AWC, suggesting a role of possible functional coupling between SLO BK channels and voltage-activated calcium channels in AWC asymmetry. Furthermore, slo-1 and slo-2 regulate the localization of synaptic markers, UNC-2 and RAB-3, in AWC neurons to control AWC asymmetry. We also identify the requirement of bkip-1, which encodes a previously identified auxiliary subunit of SLO-1, for slo-1 and slo-2 function in AWC asymmetry. Together, these results provide an unprecedented molecular link between gap junctions and calcium pathways for terminal differentiation of olfactory neurons.

Megavolt, Multigigawatt Pulsed Plasma Switch

NASA Technical Reports Server (NTRS)

Lee, Ja H.; Choi, Sang H.; Song, Kyo D.

1996-01-01

Plasma switch proposed for use in high-voltage, high-current pulse power system. Designed not only to out-perform conventional spark-gap switch but also relatively compact and lightweight. Features inverse-pinch configuration to prevent constriction of current sheets into filaments, plus multiple-ring-electrode structure to resist high-voltage breakdown.

Photovoltaic Properties of Selenized CuGa/In Films with Varied Compositions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muzzillo, Christopher P.; Mansfield, Lorelle M.; Ramanathan, Kannan

2016-11-21

Thin CuGa/In films with varied compositions were deposited by co-evaporation and then selenized in situ with evaporated selenium. The selenized Cu(In, Ga)Se2 absorbers were used to fabricate 390 solar cells. Cu/(Ga+In) and Ga/(Ga+In) (Cu/III and Ga/III) were independently varied, and photovoltaic performance was optimal at Cu/III of 77-92% for all Ga/III compositions studied (Ga/III ~ 30, 50, and 70%). The best absorbers at each Ga/III composition were characterized with time-resolved photoluminescence, scanning electron microscopy, and secondary ion mass spectrometry, and devices were studied with temperature-dependent current density-voltage, light and electrical biased quantum efficiency, and capacitance-voltage. The best cells with Ga/IIImore » ~ 30, 50, and 70% had efficiencies of 14.5, 14.4, and 12.2% and maximum power temperature coefficients of -0.496, -0.452, and -0.413%/degrees C, respectively. This resulted in the Ga/III ~ 50% champion having the highest efficiency at temperatures greater than 40 degrees C, making it the optimal composition for practical purposes. This optimum is understood as a result of the absorber's band gap grading- where minimum band gap dominates short-circuit current density, maximum space charge region band gap dominates open-circuit voltage, and average absorber band gap dominates maximum power temperature coefficient.« less

Non-contact current and voltage sensor

DOEpatents

Carpenter, Gary D; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C; Schappert, Michael A

2014-03-25

A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

Fabrication of one-dimensional alumina photonic crystals by anodization using a modified pulse-voltage method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Shou-Yi; Wang, Jian, E-mail: wangjian@nwnu.edu.cn; Wang, Gang

2015-08-15

Highlights: • The alumina multilayer structure with alternating high and low refractive index is fabricated. • This multilayer shows a strong photonic band gap (PBG) and vivid film colors. • The first PBG could be modulated easily by varying the duration time of constant high or low voltages. • Fabrication of the photonic crystal is obtained by directly electrochemical anodization. • The formation mechanism of multilayer is also discussed. - Abstract: The alumina nanolayer structure with alternating high and low porosities is conveniently fabricated by applying a modified pulse voltage waveform with constant high and low voltage. This structure showsmore » the well-defined layer in a long-range structural periodicity leads to a strong photonic band gap (PBG) from visible to near infrared and brilliant film colors. Compared with the previous reported tuning method, this method is more simple and flexible in tuning the PBG of photonic crystals (PCs). The effect of duration time of high, low and 0 V voltages on PBG is discussed. The first PBG could be modulated easily from the visible to near infrared region by varying the duration time of constant high or low voltages. It is also found that the 0 V lasting for appropriate time is helpful to improve the quality of the PCs. The formation mechanism of multilayer is also discussed.« less

The relationship between Q gamma and Ca release from the sarcoplasmic reticulum in skeletal muscle

PubMed Central

1991-01-01

Asymmetric membrane currents and fluxes of Ca2+ release were determined in skeletal muscle fibers voltage clamped in a Vaseline-gap chamber. The conditioning pulse protocol 1 for suppressing Ca2+ release and the "hump" component of charge movement current (I gamma), described in the first paper of this series, was applied at different test pulse voltages. The amplitude of the current suppressed during the ON transient reached a maximum at slightly suprathreshold test voltages (- 50 to -40 mV) and decayed at higher voltages. The component of charge movement current suppressed by 20 microM tetracaine also went through a maximum at low pulse voltages. This anomalous voltage dependence is thus a property of I gamma, defined by either the conditioning protocol or the tetracaine effect. A negative (inward-going) phase was often observed in the asymmetric current during the ON of depolarizing pulses. This inward phase was shown to be an intramembranous charge movement based on (a) its presence in the records of total membrane current, (b) its voltage dependence, with a maximum at slightly suprathreshold voltages, (c) its association with a "hump" in the asymmetric current, (d) its inhibition by interventions that reduce the "hump", (e) equality of ON and OFF areas in the records of asymmetric current presenting this inward phase, and (f) its kinetic relationship with the time derivative of Ca release flux. The nonmonotonic voltage dependence of the amplitude of the hump and the possibility of an inward phase of intramembranous charge movement are used as the main criteria in the quantitative testing of a specific model. According to this model, released Ca2+ binds to negatively charged sites on the myoplasmic face of the voltage sensor and increases the local transmembrane potential, thus driving additional charge movement (the hump). This model successfully predicts the anomalous voltage dependence and all the kinetic properties of I gamma described in the previous papers. It also accounts for the inward phase in total asymmetric current and in the current suppressed by protocol 1. According to this model, I gamma accompanies activating transitions at the same set of voltage sensors as I beta. Therefore it should open additional release channels, which in turn should cause more I gamma, providing a positive feedback mechanism in the regulation of calcium release. PMID:1650812

Use of the electrosurgical unit in a carbon dioxide atmosphere.

PubMed

Culp, William C; Kimbrough, Bradly A; Luna, Sarah; Maguddayao, Aris J; Eidson, Jack L; Paolino, David V

2016-01-01

The electrosurgical unit (ESU) utilizes an electrical discharge to cut and coagulate tissue and is often held above the surgical site, causing a spark to form. The voltage at which the spark is created, termed the breakdown voltage, is governed by the surrounding gaseous environment. Surgeons are now utilizing the ESU laparoscopically with carbon dioxide insufflation, potentially altering ESU operating characteristics. This study examines the clinical implications of altering gas composition by measuring the spark gap distance as a marker of breakdown voltage and use of the ESU on a biologic model, both in room air and carbon dioxide. Paschen's Law predicted a 35% decrease in gap distance in carbon dioxide, while testing revealed an average drop of 37-47% as compared to air. However, surgical model testing revealed no perceivable clinical difference. Electrosurgery can be performed in carbon dioxide environments, although surgeons should be aware of potentially altered ESU performance.

MIS diode structure in As/+/ implanted CdS

NASA Technical Reports Server (NTRS)

Hutchby, J. A.

1977-01-01

Structure made by As implantation of carefully prepared high-conductivity CdS surfaces followed by Pt deposition and 450 C anneal display rectifying, although substantially different, I-V characteristics in the dark and during illumination with subband-gap light. Structures prepared in the same way on an unimplanted portion of the substrate have similar I-V characteristics, except that the forward turnover voltage for an illuminated unimplanted diode is much smaller than that for an implanted diode. It is suggested that the charge conduction in both structures is dominated by hole and/or electron tunneling through a metal-semiconductor potential barrier. The tunneling processes appear to be quite sensitive to subband-gap illumination, which causes the dramatic decreases of turnover voltages and apparent series resistances. The difference in turnover voltage appears to be caused by interface states between the Pt electrode and the implanted layer, which suggests a MIS model.

Modular chemiresistive sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alam, Maksudul M.; Sampathkumaran, Uma

The present invention relates to a modular chemiresistive sensor. In particular, a modular chemiresistive sensor for hypergolic fuel and oxidizer leak detection, carbon dioxide monitoring and detection of disease biomarkers. The sensor preferably has two gold or platinum electrodes mounted on a silicon substrate where the electrodes are connected to a power source and are separated by a gap of 0.5 to 4.0 .mu.M. A polymer nanowire or carbon nanotube spans the gap between the electrodes and connects the electrodes electrically. The electrodes are further connected to a circuit board having a processor and data storage, where the processor canmore » measure current and voltage values between the electrodes and compare the current and voltage values with current and voltage values stored in the data storage and assigned to particular concentrations of a pre-determined substance such as those listed above or a variety of other substances.« less

Investigations on KONUS beam dynamics using the pre-stripper drift tube linac at GSI

NASA Astrophysics Data System (ADS)

Xiao, C.; Du, X. N.; Groening, L.

2018-04-01

Interdigital H-mode (IH) drift tube linacs (DTLs) based on KONUS beam dynamics are very sensitive to the rf-phases and voltages at the gaps between tubes. In order to design these DTLs, a deep understanding of the underlying longitudinal beam dynamics is mandatory. The report presents tracking simulations along an IH-DTL using the PARTRAN and BEAMPATH codes together with MATHCAD and CST. Simulation results illustrate that the beam dynamics design of the pre-stripper IH-DTL at GSI is sensitive to slight deviations of rf-phase and gap voltages with impact to the mean beam energy at the DTL exit. Applying the existing geometrical design, rf-voltages, and rf-phases of the DTL were re-adjusted. In simulations this re-optimized design can provide for more than 90% of transmission of an intense 15 emA beam keeping the reduction of beam brilliance below 25%.

Performance prediction of electrohydrodynamic thrusters by the perturbation method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shibata, H., E-mail: shibata@daedalus.k.u-tokyo.ac.jp; Watanabe, Y.; Suzuki, K.

2016-05-15

In this paper, we present a novel method for analyzing electrohydrodynamic (EHD) thrusters. The method is based on a perturbation technique applied to a set of drift-diffusion equations, similar to the one introduced in our previous study on estimating breakdown voltage. The thrust-to-current ratio is generalized to represent the performance of EHD thrusters. We have compared the thrust-to-current ratio obtained theoretically with that obtained from the proposed method under atmospheric air conditions, and we have obtained good quantitative agreement. Also, we have conducted a numerical simulation in more complex thruster geometries, such as the dual-stage thruster developed by Masuyama andmore » Barrett [Proc. R. Soc. A 469, 20120623 (2013)]. We quantitatively clarify the fact that if the magnitude of a third electrode voltage is low, the effective gap distance shortens, whereas if the magnitude of the third electrode voltage is sufficiently high, the effective gap distance lengthens.« less

Lead-Tin Telluride Sputtered Thin Films for Infrared Sensors

DTIC Science & Technology

1975-06-01

Concentrations in Pfa .78Sn,22Te Fllms " Tar8et *10 Effect of Substrate Bias Voltage on As-Deposited Carrier Concentration - Target #12 Effect of...be laid down in one deposition run with one target by simple bias voltage control. 3252 Sorption Coef"^^ *"* Energy Gaps. Typical plots

CHARACTERISTICS OF A FAST RISE TIME POWER SUPPLY FOR A PULSED PLASMA REACTOR FOR CHEMICAL VAPOR DESTRUCTION

EPA Science Inventory

Rotating spark gap devices for switching high-voltage direct current (dc) into a corona plasma reactor can achieve pulse rise times in the range of tens of nanoseconds. The fast rise times lead to vigorous plasma generation without sparking at instantaneous applied voltages highe...

High voltage-derived enhancement of electric conduction in nanogap devices for detection of prostate-specific antigen

NASA Astrophysics Data System (ADS)

Park, Hyung Ju; Chi, Young Shik; Choi, Insung S.; Yun, Wan Soo

2010-07-01

We report a simple method of enhancing electric conductance in nanogap devices without any additional treatments, such as silver-enhancing process. The low electric conductance after selective immobilization of biofunctionalized gold nanoparticles in the gap region was greatly enhanced by repeated I-V scans at relatively high voltage ranges of -5 to 5 V, which was attributed to the formation of a new conduction pathway across the gap. The higher conduction state of the nanogap device showed a very stable I-V curve, which was used as an excellent measure of the existence of prostate-specific antigen.

Frequency dispersion of capacitance-voltage characteristics in wide bandgap semiconductor-electrolyte junctions

NASA Astrophysics Data System (ADS)

Frolov, D. S.; Zubkov, V. I.

2016-12-01

The frequency dispersion of capacitance-voltage characteristics and derived charge carrier concentration with application to the junction between an electrolyte and wide band-gap semiconductors are investigated. To expand the measurement frequency range, the precision LCR-meter Agilent E4980A was connected to the electrochemical cell ECVPro Nanometrics via a specially designed switch unit. The influence of series resistance and degree of dopant ionization on the frequency dispersion of CV-measured characteristics are discussed. It was shown that in wide band-gap semiconductors one can get both total and ionized dopant concentration, depending on the test frequency choice for capacitance measurements.

Influence of in-situ ion-beam sputter cleaning on the conditioning effect of vacuum gaps

NASA Astrophysics Data System (ADS)

Kobayashi, Shinichi; Kojima, Hiroyuki; Saito, Yoshio

1994-05-01

An ion beam sputtering technique was used to clean the electrode surfaces of vacuum gaps. Ions of the sputtering gas were irradiated by means of an ion gun in a vacuum chamber attached to a breakdown measurement chamber. By providing in situ ion-beam sputter cleaning, this system makes it possible to make measurements free from contamination due to exposure to the air. The sputtering gas was He or Ar, and the electrodes were made of oxygen-free copper (purity more than 99.96%). An impulse voltage with the wave form of 64/700 microsecond(s) was applied to the test gap, and the pressure in the breakdown measurement chamber at the beginning of breakdown tests was 1.3 X 10-8 Pa. These experiments showed that ion-beam sputter cleaning results in higher breakdown fields after a repetitive breakdown conditioning procedure, and that He is more effective in improving hold- off voltages after the conditioning (under the same ion current density, the breakdown field was 300 MV/m for He sputtering and 200 MV/m for Ar sputtering). The breakdown fields at the first voltage application after the sputtering cleaning, on the other hand, were not improved.

Eddy current probe and method for flaw detection in metals

DOEpatents

Watjen, J.P.

1987-06-23

A flaw detecting system is shown which includes a probe having a pair of ferrite cores with in-line gaps in close proximity to each other. An insulating, non-magnetic, non-conducting holder fills the gaps and supports the ferrite cores in a manner such that the cores form a generally V-shape. Each core is provided with an excitation winding and a detection winding. The excitation windings are connected in series or parallel with an rf port for connection thereof to a radio frequency source. The detection windings, which are differentially wound, are connected in series circuit to a detector port for connection to a voltage measuring instrument. The ferrite cores at the in-line gaps directly engage the metal surface of a test piece, and the probe is scanned along the test piece. In the presence of a flaw in the metal surface the detection winding voltages are unbalanced, and the unbalance is detected by the voltage measuring instrument. The insulating holder is provided with a profile which conforms to that of a prominent feature of the test piece to facilitate movement of the probe along the feature, typically an edge or a corner. 9 figs.

Eddy current probe and method for flaw detection in metals

DOEpatents

Watjen, John P.

1987-06-23

A flaw detecting system is shown which includes a probe having a pair of ferrite cores with in-line gaps in close proximity to each other. An insulating, non-magnetic, non-conducting holder fills the gaps and supports the ferrite cores in a manner such that the cores form a generally V-shape. Each core is provided with an excitation winding and a detection winding. The excitation windings are connected in series or parallel with an rf port for connection thereof to a radio frequency source. The detection windings, which are differentially wound, are connected in series circuit to a detector port for connection to a voltage measuring instrument. The ferrite cores at the in-line gaps directly engage the metal surface of a test piece, and the probe is scanned along the test piece. In the presence of a flaw in the metal surface the detection winding voltages are unbalanced, and the unbalance is detected by the voltage measuring instrument. The insulating holder is provided with a profile which conforms to that of a prominent feature of the test piece to facilitate movement of the probe along the feature, typically an edge or a corner.

Oxidation of ammonium sulfite by a multi-needle-to-plate gas phase pulsed corona discharge reactor

NASA Astrophysics Data System (ADS)

Ren, Hua; Lu, Na; Shang, Kefeng; Li, Jie; Wu, Yan

2013-03-01

The oxidation of ammonium sulfite in the ammonia-based flue gas desulfurization (FGD) process was investigated in a multi-needle-to-plate gas phase pulsed corona discharge reactor in this paper. The effect of several parameters, including capacitance and peak pulse voltage of discharge system, electrode gap and bubbling gas flow rate on the oxidation rate of ammonium sulfite was reviewed. The oxidation rate of ammonium sulfite could reach 47.2% at the capacitance, the peak pulse voltage, electrode gap and bubbling gas flow rate equal to 2 nF, -24.6 k V, 35 mm and 4 L min-1 within treatment time of 40 min The experimental results indicate that the gas phase pulsed discharge system with a multi-needle-to-plate electrode can oxide the ammonium sulfite. The oxidation rate increased with the applied capacitance and peak pulse voltage and decreased with the electrode gap. As the bubbling gas flow rate increased, the oxidation rate increased first and then tended to reach a stationary value. These results would be important for the process optimization of the (NH4)2SO3 to (NH4)2SO4 oxidation.

Helicopter-based live-line work. Volume 1, Helicopter platform work between phases: Final report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gela, G.

1993-06-01

This report presents experimental data on tests of a configuration consisting of a helicopter between two energized phases (for AC and switching surge) or poles (for DC). The configuration is that related to live-line work from a hovering helicopter. The McDonnell Douglas 500 Series helicopter was used for the tests. All tests were performed with phase-to-phase, or pole-to-pole energization. For AC tests, proper relationship between the phase-to-ground voltages and the phase-to-phase voltage was maintained by energizing the experimental setup from a balanced 3-{phi} AC source. For DC tests, one pole was energized with positive DC voltage to ground, while themore » other pole was energized with negative DC voltage to ground. For switching surge tests, a surge of positive polarity and a specific peak voltage magnitude was applied to one phase while a surge of negative polarity and the same peak voltage Magnitude was simultaneously applied to the other phase, resulting in {alpha} = 0.5 ({alpha} is the ratio between negative and total surge). In the research program, four conditions were investigated, namely helicopter operating versus not operating, and helicopter bonded to one phase or pole versus not bonded. Results from this research show effects of the rotating main rotor blade of the helicopter, effect of the position of the electrically floating helicopter in the phase-to-phase or pole-to-pole gap, effects of the mannequin, importance of the polarity of the DC poles and switching surges, and effects of inclement weather such as rain. The overall conclusion of this research is that the phase-to-phase or pole-to-pole spacings that cause sparkover with the helicopter between phases (poles) were always significantly smaller than the typical spacings on actual existing overhead transmission lines of the corresponding voltage rating.« less

Investigation of operating parameters on CO2 splitting by dielectric barrier discharge plasma

NASA Astrophysics Data System (ADS)

Pan, CHEN; Jun, SHEN; Tangchun, RAN; Tao, YANG; Yongxiang, YIN

2017-12-01

Experiments of CO2 splitting by dielectric barrier discharge (DBD) plasma were carried out, and the influence of CO2 flow rate, plasma power, discharge voltage, discharge frequency on CO2 conversion and process energy efficiency were investigated. It was shown that the absolute quantity of CO2 decomposed was only proportional to the amount of conductive electrons across the discharge gap, and the electron amount was proportional to the discharge power; the energy efficiency of CO2 conversion was almost a constant at a lower level, which was limited by CO2 inherent discharge character that determined a constant gap electric field strength. This was the main reason why CO2 conversion rate decreased as the CO2 flow rate increase and process energy efficiency was decreased a little as applied frequency increased. Therefore, one can improve the CO2 conversion by less feed flow rate or larger discharge power in DBD plasma, but the energy efficiency is difficult to improve.

Negative differential resistance in oxidized zigzag graphene nanoribbons.

PubMed

Wang, Min; Li, Chang Ming

2011-01-28

A theoretical study of zigzag graphene nanoribbons (ZGNRs) with an epoxy-pair chain (ZGO) is performed. The electronic transport properties are mainly evaluated by non-equilibrium Green's functions using the TRANSIESTA package. The results indicate that the graphene oxide can have a negative differential resistance (NDR) phenomenon, supported by bias-dependent transmission curves of different spin orientations. Applying non-zero bias voltages makes the density of states (DOS) of the right electrodes shift down. Due to an energy gap between the LUMO and LUMO+1 in ZGOs, with a certain bias, the conduction band of the right electrode cannot match the LUMO of the scattering region, then NDR occurs. With a larger bias, NDR ends when the second conduction band of the right electrode's DOS covers the LUMO of the scattering region. Since most of proposed ZGO systems possess such a gap between the LUMO and LUMO+1, NDR can be widely observed and this discovery may provide great potential applications in NDR-based nanoelectronics by using modified graphene materials.

Test stand for gas-discharge chamber of TEA CO2 lasers with pulse-periodical energy supply

NASA Astrophysics Data System (ADS)

Shorin, Vladimyr P.; Bystrov, N. D.; Zhuravlyov, O. A.; Nekrasov, V. V.

1997-05-01

Test stand for function optimization (incomposition of gas- dynamic circuit (GDC) of operating characteristics of full- size discharge chamber of flowing TEA carbon-dioxide lasers (power up to 100 kW) was created in Samara State Aerospace University (former Kuibyshev Aviation Institute). Test stand includes an inside-type GDC, low inductive generators of voltage pulses of preionization and main discharges, two-flow rate system of gas supply and noise immunity diagnostic system. Module construction of units of GDC, power supplies of preionization and main discharges allows to change configuration of stand's systems for providing given properties of gas flow and its energy supply. This test stand can also be used in servicing of laser system. The diagnostic system of this stand allows us to analyze energy properties of discharge by means of oscillographic measurements of voltage and current with following processing of discharges' volt- ampere characteristics by means of a computer; rate of non- stationary gas-dynamic disturbances in discharge gap of discharge chamber was measured by means of pulse holographic system (UlG-1M) with data processing of schliren- and interferogram (density fluctuation sensitivity approximately 10-2) and sensor measurement system of gas-dynamic shock and acoustics process with resonance frequency exceeding 100 kHz. Research results of process of plasma plate wave and channel structures interaction with mediums, including actuation non-stationary gas-dynamic flows, cavitation erosion of preionization electrodes' dielectric substructure, ancillary heating of channels by main volumetric discharge are presented as well.

Paschen's law studies in cold gases

NASA Astrophysics Data System (ADS)

Massarczyk, R.; Chu, P.; Dugger, C.; Elliott, S. R.; Rielage, K.; Xu, W.

2017-06-01

The break-through voltage behavior over small gaps has been investigated for differing gap distances, gas pressures, and gas temperatures in nitrogen, neon, argon and xenon gases. A deviation from Paschen's law at micro gap distances has been found. At lower temperatures, a significant shift of the curve relative to the results at room temperature was observed. This behavior can be explained by combining Paschen's law and the ideal gas law.

Increasing The Electric Field For An Improved Search For Time-Reversal Violation Using Radium-225

NASA Astrophysics Data System (ADS)

Powers, Adam

2017-09-01

Radium-225 atoms, because of their unusual pear-shaped nuclei, have an enhanced sensitivity to the violation of time reversal symmetry. A breakdown of this fundamental symmetry could help explain the apparent scarcity of antimatter in the Universe. Our goal is to improve the statistical sensitivity of an ongoing experiment that precisely measures the EDM of Radium-225. This can be done by increasing the electric field acting on the Radium atoms. We do this by increasing the voltage that can be reliably applied between two electrodes, and narrowing the gap between them. We use a varying high voltage system to condition the electrodes using incremental voltage ramp tests to achieve higher voltage potential differences. Using an adjustable gap mount to change the distance between the electrodes, specific metals for their composition, and a clean room procedure to keep particulates out of the system, we produce a higher and more stable electric field. Progress is marked by measurements of the leakage current between the electrodes during our incremental voltage ramp tests or emulated tests of the actual experiment, with low and constant current showing stability of the field. This project is supported by Michigan State University, and the US DOE, Office of Science, Office of Nuclear Physics, under Contract DE-AC02-06CH11357.

Breakdown Characteristics of SF6 Gap Disturbed by a Metallic Protrusion under Oscillating Transient Overvoltages

NASA Astrophysics Data System (ADS)

Kawamura, Tatsuo; Lee, Bok-Hee; Nishimura, Takahiko; Ishii, Masaru

1994-04-01

This paper deals with the experimental investigations of particle-initiated breakdown of SF6 gas stressed by the oscillating transient overvoltage and non-oscillating impulse voltages. The experiments are carried out by using hemisphere-to-plane electrodes with a needle-shaped protrusion in the gas pressure range of 0.05 to 0.3 MPa. The temporal growth of the prebreakdown process is measured by a current shunt and a photomultiplier. The electrical breakdown is initiated by the streamer corona in the vicinity of a needle-shaped protrusion and the flashover of test gap is substantially influenced by the local field enhancement due to the space charge formed by the preceding streamer corona. The dependence of the voltage-time characteristics on the polarity of test voltage is appreciable, and the minimum breakdown voltage under the damped oscillating transient overvoltage is approximately the same as that under the standard lightning impulse voltage. In presence of positive polarity, the dielectric strength of SF6 gas stressed by the oscillating transient overvoltage is particularly sensitive to the local field perturbed by a sharp conducting particle. The formative time lag from the first streamer corona to breakdown is longer in negative polarity than in positive polarity and the field stabilization of space charge is more pronounced in negative polarity.

Competitive behavior of photons contributing to junction voltage jump in narrow band-gap semiconductor multi-quantum-well laser diodes at lasing threshold

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Liefeng, E-mail: fengliefeng@tju.edu.cn, E-mail: lihongru@nankai.edu.cn; Yang, Xiufang; Wang, Cunda

2015-04-15

The junction behavior of different narrow band-gap multi-quantum-well (MQW) laser diodes (LDs) confirmed that the jump in the junction voltage in the threshold region is a general characteristic of narrow band-gap LDs. The relative change in the 1310 nm LD is the most obvious. To analyze this sudden voltage change, the threshold region is divided into three stages by I{sub th}{sup l} and I{sub th}{sup u}, as shown in Fig. 2; I{sub th}{sup l} is the conventional threshold, and as long as the current is higher than this threshold, lasing exists and the IdV/dI-I plot drops suddenly; I{sub th}{sup u}more » is the steady lasing point, at which the separation of the quasi-Fermi levels of electron and holes across the active region (V{sub j}) is suddenly pinned. Based on the evolutionary model of dissipative structure theory, the rate equations of the photons in a single-mode LD were deduced in detail at I{sub th}{sup l} and I{sub th}{sup u}. The results proved that the observed behavior of stimulated emission suddenly substituting for spontaneous emission, in a manner similar to biological evolution, must lead to a sudden increase in the injection carriers in the threshold region, which then causes the sudden increase in the junction voltage in this region.« less

A decay of gap junctions associated with ganglion cell differentiation during retinal regeneration of the adult newt.

PubMed

Oi, Hanako; Chiba, Chikafumi; Saito, Takehiko

2003-12-01

Changes in the gap junctional coupling and maturation of voltage-activated Na(+) currents during regeneration of newt retinas were examined by whole-cell patch-clamping in slice preparations. Progenitor cells in regenerating retinas did not exhibit Na(+) currents but showed prominent electrical and tracer couplings. Cells identified by LY-fills were typically slender. Na(+) currents were detected in premature ganglion cells with round somata in the 'intermediate-II' regenerating retina. No electrical and tracer couplings were observed between these cells. Mature ganglion cells did not exhibit electrical coupling, but showed tracer coupling. On average, the maximum Na(+) current amplitude recorded from premature ganglion cells was roughly 2.5-fold smaller than that of mature ganglion cells. In addition, the activation threshold of the Na(+) current was nearly 11 mV more positive than that of mature cells. We provide morphological and physiological evidence showing that loss of gap junctions between progenitor cells is associated with ganglion cell differentiation during retinal regeneration and that new gap junctions are recreated between mature ganglion cells. Also we provide evidence suggesting that the loss of gap junctions correlates with the appearance of voltage-activated Na(+) currents in ganglion cells.

Electrical and material properties of hydrothermally grown single crystal (111) UO2

NASA Astrophysics Data System (ADS)

Dugan, Christina L.; Peterson, George Glenn; Mock, Alyssa; Young, Christopher; Mann, J. Matthew; Nastasi, Michael; Schubert, Mathias; Wang, Lu; Mei, Wai-Ning; Tanabe, Iori; Dowben, Peter A.; Petrosky, James

2018-04-01

The semiconductor and optical properties of UO2 are investigated. The very long drift carrier lifetimes, obtained from current-voltage I( V) and capacitance-voltage C( V) measurements, along with the well-defined optical properties provide little evidence of an abundance of material defects away from the surface region. Schottky barrier formation may be possible, but very much dependent on the choice of contact and surface stoichiometry and we find that Ohmic contacts are in fact favored. Depth resolved photoemission provided evidence of a chemical shift at the surface. Density functional theory, with the Heyd-Scuseria-Ernzerhof (HSE) functional, indicates a band gap of a 2.19 eV and an anti-ferromagnetic ground state. Ellipsometry measurements indicates at UO2 is relatively isotropic with a band gap of approximately 2.0 eV band gap, consistent with theoretical expectations.

High-Voltage Characterization for the Prototype Induction Cells

NASA Astrophysics Data System (ADS)

Huacen, Wang; Kaizhi, Zhang; Long, Wen; Qinggui, Lai; Linwen, Zhang; Jianjun, Deng

2002-12-01

Two linear induction prototype cells expected to work at 250kV, 3kA,with accelerating voltage flattop (±1%) ⩾ 70ns, have been tested to determine their high-voltage characteristics. Each cell is composed of a ferrite core immersed in oil, a gap with curved stainless steel electrodes, a solenoid magnet, and a insulator. The experiments were carried out with full-scale cells. The high voltage pulses were applied to two cells using a 100ns, 12Ω pulse Blumlein. The tests were performed at various high-voltage levels ranging from -250kV to -350kV. No breakdown was observed during the test at vacuum level (7-10) ṡ10-4 Pa. The cell schematic, the experimental set up, and the measured voltage waveforms are presented in this paper.

Gap junctions in Malpighian tubules of Aedes aegypti.

PubMed

Weng, Xing-He; Piermarini, Peter M; Yamahiro, Atsuko; Yu, Ming-Jiun; Aneshansley, Daniel J; Beyenbach, Klaus W

2008-02-01

We present electrical, physiological and molecular evidence for substantial electrical coupling of epithelial cells in Malpighian tubules via gap junctions. Current was injected into one principal cell of the isolated Malpighian tubule and membrane voltage deflections were measured in that cell and in two neighboring principal cells. By short-circuiting the transepithelial voltage with the diuretic peptide leucokinin-VIII we largely eliminated electrical coupling of principal cells through the tubule lumen, thereby allowing coupling through gap junctions to be analyzed. The analysis of an equivalent electrical circuit of the tubule yielded an average gap-junction resistance (R(gj)) of 431 kOmega between two cells. This resistance would stem from 6190 open gap-junctional channels, assuming the high single gap-junction conductance of 375 pS found in vertebrate tissues. The addition of the calcium ionophore A23187 (2 micromol l(-1)) to the peritubular Ringer bath containing 1.7 mmol l(-1) Ca(2+) did not affect the gap-junction resistance, but metabolic inhibition of the tubule with dinitrophenol (0.5 mmol l(-1)) increased the gap-junction resistance 66-fold, suggesting the regulation of gap junctions by ATP. Lucifer Yellow injected into a principal cell did not appear in neighboring principal cells. Thus, gap junctions allow the passage of current but not Lucifer Yellow. Using RT-PCR we found evidence for the expression of innexins 1, 2, 3 and 7 (named after their homologues in Drosophila) in Malpighian tubules. The physiological demonstration of gap junctions and the molecular evidence for innexin in Malpighian tubules of Aedes aegypti call for the double cable model of the tubule, which will improve the measurement and the interpretation of electrophysiological data collected from Malpighian tubules.

Permanent split capacitor single phase electric motor system

DOEpatents

Kirschbaum, Herbert S.

1984-01-01

A permanent split capacitor single phase electric motor achieves balanced operation at more than one operating point by adjusting the voltage supplied to the main and auxiliary windings and adjusting the capacitance in the auxiliary winding circuit. An intermediate voltage tap on an autotransformer supplies voltage to the main winding for low speed operation while a capacitive voltage divider is used to adjust the voltage supplied to the auxiliary winding for low speed operation.

Gap features of layered iron-selenium-tellurium compound below and above the superconducting transition temperature by break-junction spectroscopy combined with STS

NASA Astrophysics Data System (ADS)

Ekino, T.; Sugimoto, A.; Gabovich, A. M.

2018-05-01

We studied correlations between the superconducting gap features of Te-substituted FeSe observed by scanning tunnelling spectroscopy (STS) and break-junction tunnelling spectroscopy (BJTS). At bias voltages outside the superconducting gap-energy range, the broad gap structure exists, which becomes the normal-state gap above the critical temperature, T c. Such behaviour is consistent with the model of the partially gapped density-wave superconductor involving both superconducting gaps and pseudogaps, which has been applied by us earlier to high-Tc cuprates. The similarity suggests that the parent electronic spectrum features should have much in common for these classes of materials.

Electromagnetic Saturation of Angstrom-Sized Quantum Barriers at Terahertz Frequencies

NASA Astrophysics Data System (ADS)

Bahk, Young-Mi; Kang, Bong Joo; Kim, Yong Seung; Kim, Joon-Yeon; Kim, Won Tae; Kim, Tae Yun; Kang, Taehee; Rhie, Jiyeah; Han, Sanghoon; Park, Cheol-Hwan; Rotermund, Fabian; Kim, Dai-Sik

2015-09-01

Metal-graphene-metal hybrid structures allow angstrom-scale van der Waals gaps, across which electron tunneling occurs. We squeeze terahertz electromagnetic waves through these λ /10 000 000 gaps, accompanied by giant field enhancements. Unprecedented transmission reduction of 97% is achieved with the transient voltage across the gap saturating at 5 V. Electron tunneling facilitated by the transient electric field strongly modifies the gap index, starting a self-limiting process related to the barrier height. Our work enables greater interplay between classical optics and quantum tunneling, and provides optical indices to the van der Waals gaps.

Electromagnetic Saturation of Angstrom-Sized Quantum Barriers at Terahertz Frequencies.

PubMed

Bahk, Young-Mi; Kang, Bong Joo; Kim, Yong Seung; Kim, Joon-Yeon; Kim, Won Tae; Kim, Tae Yun; Kang, Taehee; Rhie, Jiyeah; Han, Sanghoon; Park, Cheol-Hwan; Rotermund, Fabian; Kim, Dai-Sik

2015-09-18

Metal-graphene-metal hybrid structures allow angstrom-scale van der Waals gaps, across which electron tunneling occurs. We squeeze terahertz electromagnetic waves through these λ/10 000 000 gaps, accompanied by giant field enhancements. Unprecedented transmission reduction of 97% is achieved with the transient voltage across the gap saturating at 5 V. Electron tunneling facilitated by the transient electric field strongly modifies the gap index, starting a self-limiting process related to the barrier height. Our work enables greater interplay between classical optics and quantum tunneling, and provides optical indices to the van der Waals gaps.

Optical Diagnostics of Multi-Gap Gas Switches for Linear Transformer Drivers

NASA Astrophysics Data System (ADS)

Sheng, Liang; Li, Yang; Sun, Tieping; Cong, Peitian; Zhang, Mei; Peng, Bodong; Zhao, Jizhen; Yue, Zhiqin; Wei, Fuli; Yuan, Yuan

2014-07-01

The trigger characteristics of a multi-gap gas switch with double insulating layers, a square-groove electrode supporter and a UV pre-ionizing structure are investigated aided by a high sensitivity fiber-bundle array detector, a UV fiber detector, and a framing camera, in addition to standard electrical diagnostics. The fiber-bundle-array detector is used to track the turn-on sequence of each electrode gap at a timing precision of 0.6 ns. Each fiber bundle, including five fibers with different azimuth angles, aims at the whole emitting area of each electrode gap and is fed to a photomultiplier tube. The UV fiber detector with a spectrum response of 260-320 nm, including a fused-quartz fiber of 200 μm in diameter and a solar-blinded photomultiplier tube, is adopted to study the effect of UV pre-ionizing on trigger characteristics. The framing camera, with a capacity of 4 frames per shot and an exposure time of 5 ns, is employed to capture the evolution of channel arcs. Based on the turn-on light signal of each electrode gap, the breakdown delay is divided into statistical delay and formative delay. A decrease in both of them, a smaller switch jitter and more channel arcs are observed with lower gas pressure. An increase in trigger voltage can reduce the statistical delay and its jitter, while higher trigger voltage has a relatively small influence on the formative delay and the number of channel arcs. With the UV pre-ionizing structure at 0.24 MPa gas pressure and 60 kV trigger voltage, the statistical delay and its jitter can be reduced by 1.8 ns and 0.67 ns, while the formative delay and its jitter can only be reduced by 0.5 ns and 0.25 ns.

Investigation on the influence of electrode geometry on characteristics of coaxial dielectric barrier discharge reactor driven by an oscillating microsecond pulsed power supply

NASA Astrophysics Data System (ADS)

Miao, Chuanrun; Liu, Feng; Wang, Qian; Cai, Meiling; Fang, Zhi

2018-03-01

In this paper, an oscillating microsecond pulsed power supply with rise time of several tens of nanosecond (ns) is used to excite a coaxial DBD with double layer dielectric barriers. The effects of various electrode geometries by changing the size of inner quartz tube (different electrode gaps) on the discharge uniformity, power deposition, energy efficiency, and operation temperature are investigated by electrical, optical, and temperature diagnostics. The electrical parameters of the coaxial DBD are obtained from the measured applied voltage and current using an equivalent electrical model. The energy efficiency and the power deposition in air gap of coaxial DBD with various electrode geometries are also obtained with the obtained electrical parameters, and the heat loss and operation temperature are analyzed by a heat conduction model. It is found that at the same applied voltage, with the increasing of the air gap, the discharge uniformity becomes worse and the discharge power deposition and the energy efficiency decrease. At 2.5 mm air gap and 24 kV applied voltage, the energy efficiency of the coaxial DBD reaches the maximum value of 68.4%, and the power deposition in air gap is 23.6 W and the discharge uniformity is the best at this case. The corresponding operation temperature of the coaxial DBD reaches 64.3 °C after 900 s operation and the temperature of the inner dielectric barrier is 114.4 °C under thermal balance. The experimental results provide important experimental references and are important to optimize the design and the performance of coaxial DBD reactor.

Spark Gap Electrode Erosion

DTIC Science & Technology

1984-12-01

N~JFOSR-TR- 85-0282 o ~FINAL REPORT S SPARK GAP ELECTRODE EROSION 00i Air Force Office of Scientific Research Grant No. 84-0015- Approve", t’r p...OF MONITORING ORGANIZATION Texas Tech University IDibj Air Office of Scientific Research it- ADORESS rCat.. State and ZIP CG*, 7b. ADONESS ’CitY...spark gap was measured for various electrode, gas, and pressure combinations. A previously developed model of self breakdown voltage distribution was

Photo-conductance of a single Quantum Dot

NASA Astrophysics Data System (ADS)

Zimmers, Alexandre; Wang, Hongyue; Lhuillier, Emmanuel; Yu, Qian; Dubertret, Benoit; Aubin, Herve; Ulysse, Christian; LPEM Collaboration

One promising strategy for the development of nanoscale resonant spin sensors is to measure the spin-dependent photo-current in Quantum Dots (QDots) containing spin-dependent recombination centers. To reach single spin sensitivity will require measurements of the photo-conductance of single QDots. We present here an experimental study of the conductance and photo-conductance of single HgSe QDots as function of drain and gate voltage. The evolution of the differential conductance dI/dV spectrum with the gate voltage demonstrates that single HgSe QDots are forming the junction. The amplitude of the gap measured in the differential conductance spectrum changes with the occupation level. A large inter-band gap, 0,85eV, is observed for the empty QDot, a smaller intra-band gap 0,25eV is observed for the doubly occupied QDot. These gap energies are consistent with the values extracted from the optical absorption spectrum. Upon illuminating the QDot junction, we show that the photo-conductive signal produced by this single QDot can be measured with a simple demodulation method. ANR Grant ''QUANTICON'' 10-0409-01 / DIM Nano-K / Chinese Scholarship Council.

A diffusive atmospheric pressure glow discharge in a coaxial pin-to-ring gap with a transverse magnetic field

NASA Astrophysics Data System (ADS)

Wang, YongSheng; Ding, WeiDong; Yan, JiaQi; Wang, YaNan

2017-09-01

Atmospheric pressure glow discharge (APGD) has been widely used in the industrial field. The industrial applications are based on achieving stable and diffusive APGD in a relatively large space. The existing sources only achieved stable and diffusive APGD between a short inter-electrode distance within 5 millimeters. In this paper, the effect of a transverse stationary magnetic field on the diffusion of filamentary APGD was studied in a pin-to-ring coaxial gap. The APGD was driven by a high-voltage resonant power supply, and the stationary magnetic field was supplied by a permanent magnet. The stable and diffusive APGD was achieved in the circular area, which diameter was 20 millimeters. The experimental results revealed that more collision ionization occurred and the plasma was distributed diffusively in the discharge gap by applying the external transverse magnetic field. Besides, it is likely to obtain more stable and diffusive APGD in the coaxial pin-to-ring discharge gap when adjusting the input voltage, transverse magnetic flux density and resonant frequency of the power supply.

Buckling-dependent switching behaviours in shifted bilayer germanene nanoribbons: A computational study

NASA Astrophysics Data System (ADS)

Arjmand, T.; Tagani, M. Bagheri; Soleimani, H. Rahimpour

2018-01-01

Bilayer germanene nanoribbons are investigated in different stacks like buckled and flat armchair and buckled zigzag germanene nanoribbons by performing theoretical calculations using the nonequilibrium Greens function method combined with density functional theory. In these bilayer types, the current oscillates with change of interlayer distances or intra-layer overlaps and is dependent on the type of the bilayer. Band gap of AA-stacked of shifted flat bilayer armchair germanene nanoribbon oscillates by change of interlayer distance which is in contrast to buckled bilayer armchair germanene nanoribbon. So, results show the buckling makes system tend to be a semiconductor with wide band gap. Therefore, AA-stacked of shifted flat bilayer armchair germanene nanoribbon has properties between zigzag and armchair edges, the higher current under bias voltages similar to zigzag edge and also oscillations in current like buckled armchair edges. Also, it is found that HOMO-LUMO band gap strongly affects oscillation in currents and their I-V characteristic. This kind of junction improves the switching properties at low voltages around the band gap.

Operation of low-noise single-gap RPC modules exposed to ionisation rates up to 1 kHz /cm2

NASA Astrophysics Data System (ADS)

Ćwiok, M.; Dominik, W.; Górski, M.; Królikowski, J.

2004-11-01

Two single gap medium-size RPC modules, made of bakelite plates of very good mechanical quality of the surface and having initial volume resistivity of 1 ×1010 Ω cm, were tested in the Gamma Irradiation Facility at CERN at ionisation rates up to 1 kHz /cm2. The internal surfaces facing the gas volume of one RPC module were cladded with a thin layer of linseed oil varnish for comparison of oiled and non-oiled RPC operation. The results refer to the gas mixture of C2H2F4/isobutane (97:3) with SF6 addition below 1%. The single gap modules exhibited full detection efficiency plateau for the high voltage range of about 1 kV at full intensity of gamma rays. Good timing characteristics allowed to reach 95% efficiency at fully opened irradiation source with time window of 20 ns. The intrinsic noise rate for a non-oiled and an oiled RPC gap was, respectively, below 5 and 1 Hz /cm2 at full efficiency over 1 kV voltage range.

Electromechanical resistive switching via back-to-back Schottky junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Lijie, E-mail: L.Li@swansea.ac.uk

The physics of the electromechanical resistive switching is uncovered using the theory of back-to-back Schottky junctions combined with the quantum domain space charge transport. A theoretical model of the basic element of resistive switching devices realized by the metal-ZnO nanowires-metal structure has been created and analyzed. Simulation results show that the reverse biased Schottky junction and the air gap impedance dominate the current-voltage relation at higher external voltages; thereby electromechanically varying the air gap thickness causes the device exhibit resistive tuning characteristics. As the device dimension is in nanometre scale, investigation of the model based on quantum mechanics has alsomore » been conducted.« less

Permanent split capacitor single phase electric motor system

DOEpatents

Kirschbaum, H.S.

1984-08-14

A permanent split capacitor single phase electric motor achieves balanced operation at more than one operating point by adjusting the voltage supplied to the main and auxiliary windings and adjusting the capacitance in the auxiliary winding circuit. An intermediate voltage tap on an autotransformer supplies voltage to the main winding for low speed operation while a capacitive voltage divider is used to adjust the voltage supplied to the auxiliary winding for low speed operation. 4 figs.

Mechanism of Small Current Generation under Impulse Voltage Applications in Vacuum

NASA Astrophysics Data System (ADS)

Aoki, Keita; Yasukawa, Hideaki; Kojima, Hiroki; Homma, Mitsutaka; Shioiri, Tetsu; Okubo, Hitoshi

Small discharge not to accompany breakdown can occur under high electric field in vacuum, however the mechanism is not well clarified. We have found that the current of small discharge decreases with repeated voltage applications, and leads to electrode conditioning effect of raising withstand voltage. The inception of the current is delayed with the decrease of current, and the inception time and waveform change by gap length. On the other hand, under low vacuum condition, the current increases and reaches saturation with repeated voltage applications. From these discussions, we concluded that the generating process of small current depended on the adsorption and absorption gas of electrodes.

Research and Construction of DC Energy Measurement Traceability Technology

NASA Astrophysics Data System (ADS)

Zhi, Wang; Maotao, Yang; Jing, Yang

2018-02-01

With the implementation of energy saving and emission reduction policies, DC energy metering has been widely used in many fields. In view of the lack of a DC energy measurementtraceability system, in combination with the process of downward measurement transfer in relation to the DC charger-based field calibration technology and DC energy meter and shunt calibration technologies, the paper proposed DC fast charging, high DC, small DC voltage output and measuring technologies, and built a time-based plan by converting high DC voltage into low voltage and high current into low current and then into low voltage, leaving DC energy traceable to national standards in terms of voltage, current and time and thus filling in the gap in DC energy measurement traceability.

Capacitor blocks for linear transformer driver stages.

PubMed

Kovalchuk, B M; Kharlov, A V; Kumpyak, E V; Smorudov, G V; Zherlitsyn, A A

2014-01-01

In the Linear Transformer Driver (LTD) technology, the low inductance energy storage components and switches are directly incorporated into the individual cavities (named stages) to generate a fast output voltage pulse, which is added along a vacuum coaxial line like in an inductive voltage adder. LTD stages with air insulation were recently developed, where air is used both as insulation in a primary side of the stages and as working gas in the LTD spark gap switches. A custom designed unit, referred to as a capacitor block, was developed for use as a main structural element of the transformer stages. The capacitor block incorporates two capacitors GA 35426 (40 nF, 100 kV) and multichannel multigap gas switch. Several modifications of the capacitor blocks were developed and tested on the life time and self breakdown probability. Blocks were tested both as separate units and in an assembly of capacitive module, consisting of five capacitor blocks. This paper presents detailed design of capacitor blocks, description of operation regimes, numerical simulation of electric field in the switches, and test results.

Observation of reflected waves on the SABRE positive polarity inductive adder MITL

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cuneo, M.E.; Poukey, J.W.; Mendel, C.W.

We are studying the coupling of extraction applied-B ion diodes to Magnetically Insulated Transmission Line (MITLs) on the SABRE (Sandia Accelerator and Beam Research Experiment, 6 MV, 300 kA) positive polarity inductive voltage adder. Our goal is to determine conditions under which efficient coupling occurs. The best total power efficiency for an ideal ion diode load (i.e., without parasitic losses) is obtained by maximizing the product of cathode current and gap voltage. MITLs require that the load impedance be undermatched to the self-limited line operating impedance for efficient transfer of power to ion diodes, independent of transit time isolation, andmore » even in the case of multiple cathode system with significant vacuum electron flow. We observe that this undermatched condition results in a reflected wave which decreases the line voltage and gap electron sheath current, and increases the anode and cathode current in a time-dependent way. The MITL diode coupling is determined by the flow impedance at the adder exit. We also show that the flow impedance increases along the extension MITL on SABRE. Experimental measurements of current and peak voltage are compared to analytical models and TWOQUICK 2.5-D PIC code simulations.« less

Study of self-compliance behaviors and internal filament characteristics in intrinsic SiO{sub x}-based resistive switching memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Yao-Feng, E-mail: yfchang@utexas.edu; Zhou, Fei; Chen, Ying-Chen

2016-01-18

Self-compliance characteristics and reliability optimization are investigated in intrinsic unipolar silicon oxide (SiO{sub x})-based resistive switching (RS) memory using TiW/SiO{sub x}/TiW device structures. The program window (difference between SET voltage and RESET voltage) is dependent on external series resistance, demonstrating that the SET process is due to a voltage-triggered mechanism. The program window has been optimized for program/erase disturbance immunity and reliability for circuit-level applications. The SET and RESET transitions have also been characterized using a dynamic conductivity method, which distinguishes the self-compliance behavior due to an internal series resistance effect (filament) in SiO{sub x}-based RS memory. By using amore » conceptual “filament/resistive gap (GAP)” model of the conductive filament and a proton exchange model with appropriate assumptions, the internal filament resistance and GAP resistance can be estimated for high- and low-resistance states (HRS and LRS), and are found to be independent of external series resistance. Our experimental results not only provide insights into potential reliability issues but also help to clarify the switching mechanisms and device operating characteristics of SiO{sub x}-based RS memory.« less

Study of nonlinear interaction between bunched beam and intermediate cavities in a relativistic klystron amplifier

NASA Astrophysics Data System (ADS)

Wu, Y.; Xu, Z.; Li, Z. H.; Tang, C. X.

2012-07-01

In intermediate cavities of a relativistic klystron amplifier (RKA) driven by intense relativistic electron beam, the equivalent circuit model, which is widely adopted to investigate the interaction between bunched beam and the intermediate cavity in a conventional klystron design, is invalid due to the high gap voltage and the nonlinear beam loading in a RKA. According to Maxwell equations and Lorentz equation, the self-consistent equations for beam-wave interaction in the intermediate cavity are introduced to study the nonlinear interaction between bunched beam and the intermediate cavity in a RKA. Based on the equations, the effects of modulation depth and modulation frequency of the beam on the gap voltage amplitude and its phase are obtained. It is shown that the gap voltage is significantly lower than that estimated by the equivalent circuit model when the beam modulation is high. And the bandwidth becomes wider as the beam modulation depth increases. An S-band high gain relativistic klystron amplifier is designed based on the result. And the corresponding experiment is carried out on the linear transformer driver accelerator. The peak output power has achieved 1.2 GW with an efficiency of 28.6% and a gain of 46 dB in the corresponding experiment.

The Development and Practical Use of A New 24kV Dry Air Insulated Switchgear

NASA Astrophysics Data System (ADS)

Yoshida, Tadahiro; Yano, Tomotaka; Tohya, Nobumoto; Inoue, Naoaki; Arioka, Masahiro; Sato, Shinji; Takeuchi, Toshie

We have developed a new environmentally fitted 24kV cubicle-type gas insulated switchgear (C-GIS) applying our dry air insulation technology and the electromagnetic actuation technology. Firstly, we clarified the relationship between the breakdown field strength at the tip/edge of high-voltage electrode in dry air and the field utilization factor expressing non-uniformity of the insulation gap. Based on the relationship, we designed the most suitable configuration and arrangement of the parts such as high-voltage conductors, disconnecting blades and some mechanical parts in a gas vessel. We succeeded in reducing both the number of insulation barriers and their size, compared with the former product. To reduce them, we produced some sample gaps simulated a practical insulation gap in the C-GIS and investigated its breakdown voltage dependence on the barrier height. Secondly, to apply the electromagnetic actuators for the operation mechanisms of the vacuum circuit breaker, we developed a new coupled analysis method that estimates the movement of a plunger inside the electromagnetic actuator and the electric current flowing through a closing/opening coil. Based on the analysis method, we could reduce both the number of the parts and close/open energy 45% and 80%, respectively, compared with the former spring-charged mechanism.

Non-contact current and voltage sensing method using a clamshell housing and a ferrite cylinder

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carpenter, Gary D.; El-Essawy, Wael; Ferreira, Alexandre Peixoto

2016-04-26

A method of measurement using a detachable current and voltage sensor provides an isolated and convenient technique for to measuring current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, ormore » alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.« less

Dynamics of ionization processes in high-pressure nitrogen, air, and SF{sub 6} during a subnanosecond breakdown initiated by runaway electrons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tarasenko, V. F., E-mail: vft@loi.hcei.tsc.ru; Beloplotov, D. V.; Lomaev, M. I.

2015-10-15

The dynamics of ionization processes in high-pressure nitrogen, air, and SF{sub 6} during breakdown of a gap with a nonuniform distribution of the electric field by nanosecond high-voltage pulses was studied experimentally. Measurements of the amplitude and temporal characteristics of a diffuse discharge and its radiation with a subnanosecond time resolution have shown that, at any polarity of the electrode with a small curvature radius, breakdown of the gap occurs via two ionization waves, the first of which is initiated by runaway electrons. For a voltage pulse with an ∼500-ps front, UV radiation from different zones of a diffuse dischargemore » is measured with a subnanosecond time resolution. It is shown that the propagation velocity of the first ionization wave increases after its front has passed one-half of the gap, as well as when the pressure in the discharge chamber is reduced and/or when SF{sub 6} is replaced with air or nitrogen. It is found that, at nitrogen pressures of 0.4 and 0.7 MPa and the positive polarity of the high-voltage electrode with a small curvature radius, the ionization wave forms with a larger (∼30 ps) time delay with respect to applying the voltage pulse to the gap than at the negative polarity. The velocity of the second ionization wave propagating from the plane electrode is measured. In a discharge in nitrogen at a pressure of 0.7 MPa, this velocity is found to be ∼10 cm/ns. It is shown that, as the nitrogen pressure increases to 0.7 MPa, the propagation velocity of the front of the first ionization wave at the positive polarity of the electrode with a small curvature radius becomes lower than that at the negative polarity.« less

Neutron bursts from long laboratory sparks

NASA Astrophysics Data System (ADS)

Kochkin, P.; Lehtinen, N. G.; Montanya, J.; Van Deursen, A.; Ostgaard, N.

2016-12-01

Neutron emission in association with thunderstorms and lightning discharges was reported by different investigators from ground-based observation platforms. In both cases such emission is explained by photonuclear reaction, since high-energy gamma-rays in sufficient fluxes are routinely detected from both, lightning and thunderclouds. The required gamma-rays are presumably generated by high-energy electrons in Bremsstrahlung process after their acceleration via cold and/or relativistic runaway mechanisms. This phenomenon attracted moderate scientific attention until fast neutron bursts (up to 10 MeV) from long 1 MV laboratory sparks have been reported. Clearly, with such relatively low applied voltage the electrons are unable to accelerate to the energies required for photo/electro disintegration. Moreover, all known elementary neutron generation processes are not capable to explain this emission right away. We performed an independent laboratory experiment on long sparks with the aim to confirm or disprove the neutron emission from them. The experimental setup was assembled at High-Voltage Laboratory in Barcelona and contained a Marx generator in a cone-cone spark gap configuration. The applied voltage was as low as 800 kV and the gap distance was only 60 cm. Two ns-fast cameras were located near the gap capturing short-exposure images of the pre-breakdown phenomenon at the expected neutron generation time. A plastic scintillation detector sensitive to neutrons was covered in 11 cm of lead and placed near the spark gap. The detector was calibrated and showed good performance in neutron detection. Apart of it, voltage, currents through both electrodes, and three X-ray detectors were also monitored in sophisticated measuring system. We will give an overview of the previous experimental and theoretical work in this topic, and present the results of our new experimental campaign. The conclusions are based on good signal-to-noise ratio measurements and are substantiated by high-contrast images.

Comparative study of mobility extraction methods in p-type polycrystalline silicon thin film transistors

NASA Astrophysics Data System (ADS)

Liu, Kai; Liu, Yuan; Liu, Yu-Rong; En, Yun-Fei; Li, Bin

2017-07-01

Channel mobility in the p-type polycrystalline silicon thin film transistors (poly-Si TFTs) is extracted using Hoffman method, linear region transconductance method and multi-frequency C-V method. Due to the non-negligible errors when neglecting the dependence of gate-source voltage on the effective mobility, the extracted mobility results are overestimated using linear region transconductance method and Hoffman method, especially in the lower gate-source voltage region. By considering of the distribution of localized states in the band-gap, the frequency independent capacitance due to localized charges in the sub-gap states and due to channel free electron charges in the conduction band were extracted using multi-frequency C-V method. Therefore, channel mobility was extracted accurately based on the charge transport theory. In addition, the effect of electrical field dependent mobility degradation was also considered in the higher gate-source voltage region. In the end, the extracted mobility results in the poly-Si TFTs using these three methods are compared and analyzed.

Investigation of a compact coaxially fed switched oscillator.

PubMed

Wang, Yuwei; Chen, Dongqun; Zhang, Jiande; Cao, Shengguang; Li, Da; Liu, Chebo

2013-09-01

To generate a relative high frequency mesoband microwave, a compact coaxially fed transmission line switched oscillator with high voltage capability is investigated. The characteristic impedance and voltage capability of the low impedance transmission line (LITL) have been analyzed. It is shown that the working voltage of the oscillator can reach up to 200 kV when it is filled by pressurized nitrogen and charged by a nanosecond driving source. By utilizing a commercial electromagnetic simulation code, the transient performance of the switched oscillator with a lumped resistance load is simulated. It is illustrated that the center frequency of the output signal reaches up to ~0.6 GHz when the spark gap practically closes with a single channel. Besides, the influence of the closing mode and rapidity of the spark gap, the permittivity of the insulator at the output end of the LITL, and the load impedance on the transient performance of the designed oscillator has been analyzed in quantification. Finally, the good transient performance of the switched oscillator has been preliminarily proved by the experiment.

Miscibility Gap Closure, Interface Morphology, and Phase Microstructure of 3D Li xFePO 4 Nanoparticles from Surface Wetting and Coherency Strain

DOE PAGES

Welland, Michael J.; Karpeyev, Dmitry; O’Connor, Devin T.; ...

2015-09-10

We study the mesoscopic effects which suppress phase-segregation in Li xFePO 4 nanoparticles using a multiphysics phase-field model implement on a high performance cluster. We simulate 3D spherical particles of radii from 3nm to 40nm and examine the equilibrium microstructure and voltage profiles as a they depend on size and overall lithiation. The model includes anisotropic, concentration-dependent elastic moduli, misfit strain, and facet dependent surface wetting within a Cahn-Hilliard formulation. Here, we find that the miscibility gap vanishes for particles of radius ~ 5 nm, and the solubility limits change with overall particle lithiation. The corresponding voltage plateau, indicative ofmore » phase-segregation, changes in extent and also vanishes. Surface wetting is found to have a strong effect on stabilizing a variety of microstructures, exaggerating the shifting of solubility limits, and shortening the voltage plateau.« less

Experimental and analytical study of the DC breakdown characteristics of polypropylene laminated paper with a butt gap condition considering the insulation design of superconducting cable

NASA Astrophysics Data System (ADS)

Seo, In-jin; Choi, Won; Seong, Jae-gyu; Lee, Bang-wook; Koo, Ja-yoon

2014-08-01

It has been reported that the insulation design under DC stress is considered as one of the critical factors in determining the performance of high-voltage direct current (HVDC) superconducting cable. Therefore, it is fundamentally necessary to investigate the DC breakdown characteristics of the composite insulation system consisting of liquid nitrogen (LN2)/polypropylene-laminated-paper (PPLP). In particular, the insulation characteristics under DC polarity reversal condition should be verified to understand the polarity effect of the DC voltage considering the unexpected incidents taking place at line-commutated-converters (LCC) under service at a DC power grid. In this study, to examine the variation of DC electric field strength, the step voltage and polarity reversal breakdown tests are performed under DC stress. Also, we investigate the electric field distributions in a butt gap of the LN2/PPLP condition considering the DC polarity reversal by using simulation software.

Fast optical and electrical diagnostics of pulsed spark discharges in different gap geometries

NASA Astrophysics Data System (ADS)

Höft, Hans; Huiskamp, Tom; Kettlitz, Manfred

2016-09-01

Spark discharges in different electrode configurations and with various electrode materials were ignited in air at atmospheric pressure using a custom build pulse charger with 1 μs voltage rise time (up to 28 kV) in single shot operation. Fast voltage and current measurements were combined with iCCD imaging with high spatial resolution (better than 10 μm) on pin-to-pin, pin-to-half-sphere and symmetrical half-sphere tungsten electrodes and symmetrical half-sphere brass electrodes for electrode gaps of 0.1 to 0.7 mm. Breakdown voltages, consumed electrical energies and the discharge emission structures as well as the discharge diameters were obtained. Because of the synchronization of the electrical measurements and the iCCD imaging (i.e. one complete data set for every shot), it was possible to estimate the current density and the change of the discharge pattern, such as single or multiple channels, for all cases. EU funding under Grant No 316216 (PlasmaShape).

Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin

We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down tomore » the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.« less

Plasmon-enhanced electron scattering in nanostructured thin metal films revealed by low-voltage scanning electron microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mikhailovskii, V., E-mail: v.mikhailovskii@spbu.ru; IRC for Nanotechnology, Research Park, St.-Petersburg State University; Petrov, Yu.

2016-06-17

The drastic enhancement of backscattered electrons (BSE) yield from nanostructured thin metal film which exceeded well the one from massive metal was observed at accelerating voltages below 400 V. The dependences of BSE signal from nanostructured gold film on accelerating voltage and on retarding grid potential applied to BSE detector were investigated. It was shown that enhanced BSE signal was formed by inelastic scattered electrons coming from the gaps between nanoparticles. A tentative explanation of the mechanism of BSE signal enhancement was suggested.

Application of stochastic automata networks for creation of continuous time Markov chain models of voltage gating of gap junction channels.

PubMed

Snipas, Mindaugas; Pranevicius, Henrikas; Pranevicius, Mindaugas; Pranevicius, Osvaldas; Paulauskas, Nerijus; Bukauskas, Feliksas F

2015-01-01

The primary goal of this work was to study advantages of numerical methods used for the creation of continuous time Markov chain models (CTMC) of voltage gating of gap junction (GJ) channels composed of connexin protein. This task was accomplished by describing gating of GJs using the formalism of the stochastic automata networks (SANs), which allowed for very efficient building and storing of infinitesimal generator of the CTMC that allowed to produce matrices of the models containing a distinct block structure. All of that allowed us to develop efficient numerical methods for a steady-state solution of CTMC models. This allowed us to accelerate CPU time, which is necessary to solve CTMC models, ~20 times.

Dynamic Scattering Mode LCDs

NASA Astrophysics Data System (ADS)

Bahadur, Birendra

The following sections are included: * INTRODUCTION * CELL DESIGNING * EXPERIMENTAL OBSERVATIONS IN NEMATICS RELATED WITH DYNAMIC SCATTERING * Experimental Observations at D.C. Field and Electrode Effects * Experimental Observation at Low Frequency A.C. Fields * Homogeneously Aligned Nematic Regime * Williams Domains * Dynamic Scattering * Experimental Observation at High Frequency A.C. Field * Other Experimental Observations * THEORETICAL INTERPRETATIONS * Felici Model * Carr-Helfrich Model * D.C. Excitation * Dubois-Violette, de Gennes and Parodi Model * Low Freqency or Conductive Regime * High Frequency or Dielectric Regime * DYNAMIC SCATTERING IN SMECRIC A PHASE * ELECTRO-OPTICAL CHARACTERISTICS AND LIMITATIONS * Contrast Ratio vs. Voltage, Viewing Angle, Cell Gap, Wavelength and Temperature * Display Current vs. Voltage, Cell Gap and Temperature * Switching Time * Effect of Alignment * Effect of Conductivity, Temperature and Frequency * Addressing of DSM LCDs * Limitations of DSM LCDs * ACKNOWLEDGEMENTS * REFERENCES

Voltage-Clamp Studies on Uterine Smooth Muscle

PubMed Central

Anderson, Nels C.

1969-01-01

These studies have developed and tested an experimental approach to the study of membrane ionic conductance mechanisms in strips of uterine smooth muscle. The experimental and theoretical basis for applying the double sucrose-gap technique is described along with the limitations of this system. Nonpropagating membrane action potentials were produced in response to depolarizing current pulses under current-clamp conditions. The stepwise change of membrane potential under voltage-clamp conditions resulted in a family of ionic currents with voltage- and time-dependent characteristics. In sodium-free solution the peak transient current decreased and its equilibrium potential shifted along the voltage axis toward a more negative internal potential. These studies indicate a sodium-dependent, regenerative excitation mechanism. PMID:5796366

Electron launching voltage monitor

DOEpatents

Mendel, Clifford W.; Savage, Mark E.

1992-01-01

An electron launching voltage monitor measures MITL voltage using a relationship between anode electric field and electron current launched from a cathode-mounted perturbation. An electron launching probe extends through and is spaced from the edge of an opening in a first MITL conductor, one end of the launching probe being in the gap between the MITL conductor, the other end being adjacent a first side of the first conductor away from the second conductor. A housing surrounds the launching probe and electrically connects the first side of the first conductor to the other end of the launching probe. A detector detects the current passing through the housing to the launching probe, the detected current being representative of the voltage between the conductors.

Metal nanoparticle film-based room temperature Coulomb transistor.

PubMed

Willing, Svenja; Lehmann, Hauke; Volkmann, Mirjam; Klinke, Christian

2017-07-01

Single-electron transistors would represent an approach to developing less power-consuming microelectronic devices if room temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small, self-assembled, colloidal, metal nanoparticles on a back-gate device architecture, which leads to well-defined and well-controllable transistor characteristics. This Coulomb transistor has three main advantages. By using the scalable Langmuir-Blodgett method, we combine high-quality chemically synthesized metal nanoparticles with standard lithography techniques. The resulting transistors show on/off ratios above 90%, reliable and sinusoidal Coulomb oscillations, and room temperature operation. Furthermore, this concept allows for versatile tuning of the device properties such as Coulomb energy gap and threshold voltage, as well as period, position, and strength of the oscillations.

Success of spiral wave unpinning from heterogeneity in a cardiac tissue depends on its boundary conditions

NASA Astrophysics Data System (ADS)

Kachalov, V. N.; Tsvelaya, V. A.; Kudryashova, N. N.; Agladze, K. I.

2017-11-01

The mechanism of the low voltage defibrillation is based on the drift of the spiral wave induced by a high frequency wave train. In the process, it is first necessary to unpin the wave from the stabilizing obstacle. We study the conditions of unpinning of a rotating wave anchored to the defect by posing the main accent on the boundary conditions of it. The computer simulations performed using the Korhonen model showed that the fluxes through the border of the defect in the cardiac tissue can significantly modify the excitation pattern, and the working frequency gap for the unpinning of reentry waves could be substantially reduced, making overdrive pacing procedure less effective or practically inapplicable.

Synthesis of a low-band-gap small molecule based on acenaphthoquinoxaline for efficient bulk heterojunction solar cells.

PubMed

Mikroyannidis, J A; Kabanakis, A N; Kumar, Anil; Sharma, S S; Vijay, Y K; Sharma, G D

2010-08-03

A novel small molecule (SM) with a low-band-gap based on acenaphthoquinoxaline was synthesized and characterized. It was soluble in polar solvents such as N,N-dimethylformamide and dimethylacetamide. SM showed broad absorption curves in both solution and thin films with a long-wavelength maximum at 642 nm. The thin film absorption onset was located at 783 nm, which corresponds to an optical band gap of 1.59 eV. SM was blended with PCBM to study the donor-acceptor interactions in the blended film morphology and the photovoltaic response of the bulk heterojunction (BHJ) devices. The cyclic voltammetry measurements of the materials revealed that the HOMO and LUMO levels of SM are well aligned with those of PCBM, allowing efficient photoinduced charge transfer and suitable open circuit voltage, leading to overall power conversion efficiencies (PCEs) of approximately 2.21 and 3.23% for devices with the as-cast and thermally annealed blended layer, respectively. The increase in the PCE with the thermally annealed blend is mainly attributed to the improvement in incident photon to current efficiency (IPCE) and short circuit photocurrent (J(sc)). Thermal annealing leads to an increase in both the crystallinity of the blend and hole mobility, which improves the PCE.

TiN coated aluminum electrodes for DC high voltage electron guns

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A.; Taus, Rhys

Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloymore » (Ti-6AI-4V). Following gas conditioning, each TiN-coated aluminum electrode reached -225 kV bias voltage while generating less than 100 pA of field emission (<10 pA) using a 40 mm cathode/anode gap, corresponding to field strength of 13.7 MV/m. Smaller gaps were studied to evaluate electrode performance at higher field strength with the best performing TiN-coated aluminum electrode reaching ~22.5 MV/m with field emission less than 100 pA. These results were comparable to those obtained from our best-performing electrodes manufactured from stainless steel, titanium alloy and niobium, as reported in references cited below. The TiN coating provided a very smooth surface and with mechanical properties of the coating (hardness and modulus) superior to those of stainless steel, titanium-alloy, and niobium electrodes. These features likely contributed to the improved high voltage performance of the TiN-coated aluminum electrodes.« less

TiN coated aluminum electrodes for DC high voltage electron guns

DOE PAGES

Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A.; Taus, Rhys; ...

2015-05-01

Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloymore » (Ti-6AI-4V). Following gas conditioning, each TiN-coated aluminum electrode reached -225 kV bias voltage while generating less than 100 pA of field emission (<10 pA) using a 40 mm cathode/anode gap, corresponding to field strength of 13.7 MV/m. Smaller gaps were studied to evaluate electrode performance at higher field strength with the best performing TiN-coated aluminum electrode reaching ~22.5 MV/m with field emission less than 100 pA. These results were comparable to those obtained from our best-performing electrodes manufactured from stainless steel, titanium alloy and niobium, as reported in references cited below. The TiN coating provided a very smooth surface and with mechanical properties of the coating (hardness and modulus) superior to those of stainless steel, titanium-alloy, and niobium electrodes. These features likely contributed to the improved high voltage performance of the TiN-coated aluminum electrodes.« less

Measurement and potential barrier evolution analysis of cold field emission in fracture fabricated Si nanogap

NASA Astrophysics Data System (ADS)

Banerjee, Amit; Hirai, Yoshikazu; Tsuchiya, Toshiyuki; Tabata, Osamu

2017-06-01

Cold field emission characteristics of a fracture fabricated Si nanogap (˜100 nm) were investigated with an ascending electric field (voltage) sweep. The nanogap was formed by controlled fracture of a free-standing silicon micro-beam along <111> direction by a microelectromechanical device, which results in flat, smooth, and conformal electrode pairs. This facilitates simultaneous large area emission, which gives rise to a significant current at low bias voltage, which usually remains indiscernible in nanogaps of this size. The measured emission current-voltage (I-V) characteristics clearly depict two distinct regimes: a linear (I ∝ V) regime at low bias voltage and a nonlinear [ln(I/V 2) ∝ V -1] regime at high bias voltage, separated by a transition point. We propose that the linear regime is owed to direct tunneling of electrons, whereas the nonlinear regime is due to Fowler-Nordheim type emission. This proposition essentially implies that the tunneling potential barrier gradually evolved from a rectangular shape to a triangular shape with increasing field (V). This type of evolution is usually observed in molecular size gaps. We have attempted to correlate the I-V curves acquired through the experiments with the electric field induced barrier shape evolution by numerical calculations involving standard quantum mechanics. The observed linear regime at low bias voltage (<5 V) in a relatively large size gap (˜100 nm) is attributed to the fabrication method adopted in this study. The reported study and the fabricated device are significant for developing a futuristic thermotunneling refrigerator that will find a wide range of application in nanoelectronic devices.

Fully depleted back illuminated CCD

DOEpatents

Holland, Stephen Edward

2001-01-01

A backside illuminated charge coupled device (CCD) is formed of a relatively thick high resistivity photon sensitive silicon substrate, with frontside electronic circuitry, and an optically transparent backside ohmic contact for applying a backside voltage which is at least sufficient to substantially fully deplete the substrate. A greater bias voltage which overdepletes the substrate may also be applied. One way of applying the bias voltage to the substrate is by physically connecting the voltage source to the ohmic contact. An alternate way of applying the bias voltage to the substrate is to physically connect the voltage source to the frontside of the substrate, at a point outside the depletion region. Thus both frontside and backside contacts can be used for backside biasing to fully deplete the substrate. Also, high resistivity gaps around the CCD channels and electrically floating channel stop regions can be provided in the CCD array around the CCD channels. The CCD array forms an imaging sensor useful in astronomy.

Stability of Triggering of the Switch with Sharply Non-Uniform Electric Field at the Electrode with Negative Potential

NASA Astrophysics Data System (ADS)

Kovalchuk, B. M.; Zherlitsyn, A. A.; Kumpyak, E. V.

2017-12-01

Results of investigations into a two-electrode high-pressure gas switch with sharply non-uniform field at the electrode with negative potential operating in the self-breakdown regime with pulsed charging of a highvoltage capacitive energy storage for 100 μs to voltage exceeding 200 kV are presented. It is demonstrated that depending on the air pressure and the gap length, the corona-streamer discharge, whose current increases with voltage, arises in the switch at a voltage of 0.2-0.3 of the self-breakdown voltage. At the moment of switch self-breakdown, the corona-streamer discharge goes over to one or several spark channels. The standard deviation of the triggering moment can be within 1.5 μs, which corresponds to the standard deviation of the self-breakdown voltage less than 2 kV. The voltage stability can be better than 1.5%.

Multi-gap high impedance plasma opening switch

DOEpatents

Mason, Rodney J.

1996-01-01

A high impedance plasma opening switch having an anode and a cathode and at least one additional electrode placed between the anode and cathode. The presence of the additional electrodes leads to the creation of additional plasma gaps which are in series, increasing the net impedance of the switch. An equivalent effect can be obtained by using two or more conventional plasma switches with their plasma gaps wired in series. Higher impedance switches can provide high current and voltage to higher impedance loads such as plasma radiation sources.

Impact of electrode geometry on an atmospheric pressure surface barrier discharge

NASA Astrophysics Data System (ADS)

Hasan, M. I.; Morabit, Y.; Dickenson, A.; Walsh, J. L.

2017-06-01

Several of the key characteristics of an atmospheric pressure surface barrier discharge (SBD) are heavily dependent on the geometrical configuration of the plasma generating electrodes. This paper reveals that increasing the surface area of an SBD device by reducing the gaps within the electrodes can have major and unforeseen consequence on the discharge properties. It is experimentally demonstrated that a critical limit exists when reducing the diameter of a circular electrode gap below 5 mm, beyond which the required breakdown voltage increases exponentially and the power deposited in the discharge is impeded. Using a numerical model, it is shown that a reduced electrode gap diameter yields a decrease in the voltage difference between the electrode and dielectric surface, thus lowering the maximum electric field. This study indicates a link between the electrode geometry and the nature of the reactive chemistry produced in the plasma, findings which have wide-reaching implications for many applications where multiple closely packed surface barrier discharges are employed to achieve uniform and large area plasma processing.

Voltage-induced switching of an antiferromagnetically ordered topological Dirac semimetal

NASA Astrophysics Data System (ADS)

Kim, Youngseok; Kang, Kisung; Schleife, André; Gilbert, Matthew J.

2018-04-01

An antiferromagnetic semimetal has been recently identified as a new member of topological semimetals that may host three-dimensional symmetry-protected Dirac fermions. A reorientation of the Néel vector may break the underlying symmetry and open a gap in the quasiparticle spectrum, inducing the (semi)metal-insulator transition. Here, we predict that such a transition may be controlled by manipulating the chemical potential location of the material. We perform both analytical and numerical analysis on the thermodynamic potential of the model Hamiltonian and find that the gapped spectrum is preferred when the chemical potential is located at the Dirac point. As the chemical potential deviates from the Dirac point, the system shows a possible transition from the gapped to the gapless phase and switches the corresponding Néel vector configuration. We perform density functional theory calculations to verify our analysis using a realistic material and discuss a two terminal transport measurement as a possible route to identify the voltage-induced switching of the Néel vector.

Switching effects and spin-valley Andreev resonant peak shifting in silicene superconductor

NASA Astrophysics Data System (ADS)

Soodchomshom, Bumned; Niyomsoot, Kittipong; Pattrawutthiwong, Eakkarat

2018-03-01

The magnetoresistance and spin-valley transport properties in a silicene-based NM/FB/SC junction are investigated, where NM, FB and SC are normal, ferromagnetic and s-wave superconducting silicene, respectively. In the FB region, perpendicular electric and staggered exchange fields are applied. The quasiparticles may be described by Dirac Bogoliubov-de Gennes equation due to Cooper pairs formed by spin-valley massive fermions. The spin-valley conductances are calculated based on the modified Blonder-Tinkham-Klapwijk formalism. We find the spin-valley dependent Andreev resonant peaks in the junction shifted by applying exchange field. Perfect conductance switch generated by interplay of intrinsic spin orbit interaction and superconducting gap has been predicted. Spin and valley polarizations are almost linearly dependent on biased voltage near zero bias and then turn into perfect switch at biased voltage approaching the superconducting gap. The perfect switching of large magnetoresistance has been also predicted at biased energy near the superconducting gap. These switching effects may be due to the presence of spin-valley Andreev resonant peak near the superconducting gap. Our work reveals potential of silicene as applications of electronic switching devices and linear control of spin and valley polarizations.

Numerical investigation of the effect of driving voltage pulse shapes on the characteristics of low-pressure argon dielectric barrier discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eslami, E., E-mail: eeslami@iust.ac.ir; Barjasteh, A.; Morshedian, N.

2015-06-15

In this work, we numerically compare the effect of a sinusoidal, triangular, and rectangular pulsed voltage profile on the calculated particle production, electric current, and gas voltage in a dielectric barrier discharge. The total argon gas pressure of 400 Pa, the distance between dielectrics of 5 mm, the dielectric thickness of 0.7 mm, and the temperature of T = 300 K were considered as input parameters. The different driving voltage pulse shapes (triangular, rectangular, and sinusoidal) are considered as applied voltage with a frequency of 7 kHz and an amplitude of 700 V peak to peak. It is shown thatmore » applying a rectangular voltage, as compared with a sinusoidal or triangle voltage, increases the current peak, while the peak width is decreased. Higher current density is related to high production of charged particles, which leads to the generation of some highly active species, such as Ar* (4s level), and Ar** (4p level) in the gap.« less

Modelling and Simulation of Single-Phase Series Active Compensator for Power Quality Improvement

NASA Astrophysics Data System (ADS)

Verma, Arun Kumar; Mathuria, Kirti; Singh, Bhim; Bhuvaneshwari, G.

2017-10-01

A single-phase active series compensator is proposed in this work to reduce harmonic currents at the ac mains and to regulate the dc link voltage of a diode bridge rectifier (DBR) that acts as the front end converter for a voltage source inverter feeding an ac motor. This ac motor drive is used in any of the domestic, commercial or industrial appliances. Under fluctuating ac mains voltages, the dc link voltage of the DBR depicts wide variations and hence the ac motor is used at reduced rating as compared to its name-plate rating. The active series compensator proposed here provides dual functions of improving the power quality at the ac mains and regulating the dc link voltage thus averting the need for derating of the ac motor.

Thin film solar cell including a spatially modulated intrinsic layer

DOEpatents

Guha, Subhendu; Yang, Chi-Chung; Ovshinsky, Stanford R.

1989-03-28

One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

Discharge in Long Air Gaps; Modelling and applications

NASA Astrophysics Data System (ADS)

Beroual, A.; Fofana, I.

2016-06-01

Discharge in Long Air Gaps: Modelling and applications presents self-consistent predictive dynamic models of positive and negative discharges in long air gaps. Equivalent models are also derived to predict lightning parameters based on the similarities between long air gap discharges and lightning flashes. Macroscopic air gap discharge parameters are calculated to solve electrical, empirical and physical equations, and comparisons between computed and experimental results for various test configurations are presented and discussed. This book is intended to provide a fresh perspective by contributing an innovative approach to this research domain, and universities with programs in high-voltage engineering will find this volume to be a working example of how to introduce the basics of electric discharge phenomena.

Barium Titanate Photonic Crystal Electro-Optic Modulators for Telecommunication and Data Network Applications

NASA Astrophysics Data System (ADS)

Girouard, Peter D.

The microwave, optical, and electro-optic properties of epitaxial barium titanate thin films grown on (100) MgO substrates and photonic crystal electro-optic modulators fabricated on these films were investigated to demonstrate the applicability of these devices for telecommunication and data networks. The electrical and electro-optical properties were characterized up to modulation frequencies of 50 GHz, and the optical properties of photonic crystal waveguides were determined for wavelengths spanning the optical C band between 1500 and 1580 nm. Microwave scattering parameters were measured on coplanar stripline devices with electrode gap spacings between 5 and 12 mum on barium titanate films with thicknesses between 230 and 680 nm. The microwave index and device characteristic impedance were obtained from the measurements. Larger (lower) microwave indices (impedances) were obtained for devices with narrower electrode gap spacings and on thicker films. Thinner film devices have both lower index mismatch between the co-propagating microwave and optical signals and lower impedance mismatch to a 50O system, resulting in a larger predicted electro-optical 3 dB bandwidth. This was experimentally verified with electro-optical frequency response measurements. These observations were applied to demonstrate a record high 28 GHz electro-optic bandwidth measured for a BaTiO3 conventional ridge waveguide modulator having 1mm long electrodes and 12 mum gap spacing on a 260nm thick film. The half-wave voltage and electro-optic coefficients of barium titanate modulators were measured for films having thicknesses between 260 and 500 nm. The half-wave voltage was directly measured at low frequencies using a polarizer-sample-compensator-analyzer setup by over-driving waveguide integrated modulators beyond their linear response regime. Effective in-device electro-optic coefficients were obtained from the measured half-wave voltages. The effective electro-optic coefficients were found to increase with both applied electrical dc bias and with film thickness. A record low 0.39V ˙ cm (0.45V ˙ cm) voltage-length product was measured for barium titanate modulators operating at telecommunication wavelengths on a device with 5 ?m electrode gap spacing on a 500nm thick film modulated at a frequency of 100 Hz (1 MHz). This measured voltage-length product is more than a factor of 5 lower than that reported for state-of-the-art silicon conventional waveguide modulators. The electro-optical characterization of BaTiO3 films revealed a trade-off that exists for traveling wave BaTiO3 modulators: lower voltages are obtained in thicker film devices with narrow electrode gap spacing while larger bandwidths are obtained in thinner film devices with wider electrode gap spacing. These findings were supported by calculations of the film thickness dependent half-wave voltage and electro-optic bandwidth. In order to demonstrate modulators having simultaneously low voltage operation and high electro-optic bandwidth, photonic crystal waveguide modulators with large group index were investigated through theory and experiment. The theory for slow light phase delay in linear optical materials was extended for second order nonlinear optical materials. This theory was incorporated into a detailed model for predicting photonic crystal modulator performance in terms of voltage-length product and electro-optic bandwidth. Modeling shows that barium titanate photonic crystal modulators with sub-millimeter length, sub-volt operation, and greater than 40 GHz electro-optic bandwidth are achievable in a single device. Two types of photonic crystal waveguides (PC) on BaTiO3 films were designed, fabricated, and characterized: waveguides with hexagonal lattice symmetry and waveguides with hexagonal symmetry having a line defect oriented in the direction of light propagation. Excellent agreement was obtained between the simulated and measured transmission for hexagonal lattice PC waveguides. An extinction of 20 dB was measured across a 9.9 nm stop band edge, yielding a record large band edge sharpness of 2 dB/nm for all photonic crystal waveguides on ferroelectric films. A 12-fold enhancement of the electro-optic coefficient was measured via optical spectral analysis in a line defect BaTiO3 modulator, yielding an effective electro-optic coefficient of 900 pm/V in the photonic crystal region at a modulation frequency of 10 GHz. This enhancement was demonstrated over a 48 nm range, demonstrating the wideband operation of these devices.

A universal theory for gas breakdown from microscale to the classical Paschen law

NASA Astrophysics Data System (ADS)

Loveless, Amanda M.; Garner, Allen L.

2017-11-01

While well established for larger gaps, Paschen's law (PL) fails to accurately predict breakdown for microscale gaps, where field emission becomes important. This deviation from PL is characterized by the absence of a minimum breakdown voltage as a function of the product of pressure and gap distance, which has been demonstrated analytically for microscale and smaller gaps with no secondary emission at atmospheric pressure [A. M. Loveless and A. L. Garner, IEEE Trans. Plasma Sci. 45, 574-583 (2017)]. We extend these previous results by deriving analytic expressions that incorporate the nonzero secondary emission coefficient, γS E, that are valid for gap distances larger than those at which quantum effects become important (˜100 nm) while remaining below those at which streamers arise. We demonstrate the validity of this model by benchmarking to particle-in-cell simulations with γSE = 0 and comparing numerical results to an experiment with argon, while additionally predicting a minimum voltage that was masked by fixing the gap pressure in previous analyses. Incorporating γSE demonstrates the smooth transition from field emission dominated breakdown to the classical PL once the combination of electric field, pressure, and gap distance satisfies the conventional criterion for the Townsend avalanche; however, such a condition generally requires supra-atmospheric pressures for breakdown at the microscale. Therefore, this study provides a single universal breakdown theory for any gas at any pressure dominated by field emission or Townsend avalanche to guide engineers in avoiding breakdown when designing microscale and larger devices, or inducing breakdown for generating microplasmas.

Dynamic magnetoelectric effect in ferromagnet/superconductor tunnel junctions.

PubMed

Trif, Mircea; Tserkovnyak, Yaroslav

2013-08-23

We study the magnetization dynamics in a ferromagnet/insulator/superconductor tunnel junction and the associated buildup of the electrical polarization. We show that for an open circuit, the induced voltage varies strongly and nonmonotonically with the precessional frequency, and can be enhanced significantly by the superconducting correlations. For frequencies much smaller or much larger than the superconducting gap, the voltage drops to zero, while when these two energy scales are comparable, the voltage is peaked at a value determined by the driving frequency. We comment on the potential utilization of the effect for the low-temperature spatially resolved spectroscopy of magnetic dynamics.

A high-voltage pulse transformer with a modular ferrite core

NASA Astrophysics Data System (ADS)

Liu, Z.; Winands, G. J. J.; Yan, K.; Pemen, A. J. M.; Van Heesch, E. J. M.

2008-01-01

A high ratio (winding ratio of 1:80) pulse transformer with a modular ferrite core was developed for a repetitive resonant charging system. The magnetic core is constructed from 68 small blocks of ferrites, glued together by epoxy resin. This allows a high degree of freedom in choosing core shape and size. Critical issues related to this modular design are the size tolerance of the individual ferrite blocks, the unavoidable air gap between the blocks, and the saturation of the core. To evaluate the swing of the flux density inside the core during the charging process, an equivalent circuit model was introduced. It was found that when a transformer is used in a resonant charging circuit, the minimal required volume of the magnetic material to keep the core unsaturated depends on the coupling coefficient of the transformer and is independent of the number of turns of the primary winding. Along the flux path, 17 small air gaps are present due to the inevitable joints between the ferrite blocks. The total air gap distance is about 0.67mm. The primary and secondary windings have 16 turns and 1280 turns, respectively, and the actually obtained ratio is about 1:75.4. A coupling coefficient of 99.6% was obtained. Experimental results are in good agreement with the model, and the modular ferrite core works well. Using this transformer, the high-voltage capacitors can be charged up to more than 70kV from a low-voltage capacitor with an initial charging voltage of about 965V. With 26.9J energy transfer, the increased flux density inside the core was about 0.23T, and the core remains unsaturated. The energy transfer efficiency from the primary to the secondary was around 92%.

Towards optimization in digital chest radiography using Monte Carlo modelling

NASA Astrophysics Data System (ADS)

Ullman, Gustaf; Sandborg, Michael; Dance, David R.; Hunt, Roger A.; Alm Carlsson, Gudrun

2006-06-01

A Monte Carlo based computer model of the x-ray imaging system was used to investigate how various image quality parameters of interest in chest PA radiography and the effective dose E vary with tube voltage (90-150 kV), additional copper filtration (0-0.5 mm), anti-scatter method (grid ratios 8-16 and air gap lengths 20-40 cm) and patient thickness (20-28 cm) in a computed radiography (CR) system. Calculated quantities were normalized to a fixed value of air kerma (5.0 µGy) at the automatic exposure control chambers. Soft-tissue nodules were positioned at different locations in the anatomy and calcifications in the apical region. The signal-to-noise ratio, SNR, of the nodules and the nodule contrast relative to the contrast of bone (C/CB) as well as relative to the dynamic range in the image (Crel) were used as image quality measures. In all anatomical regions, except in the densest regions in the thickest patients, the air gap technique provides higher SNR and contrast ratios than the grid technique and at a lower effective dose E. Choice of tube voltage depends on whether quantum noise (SNR) or the contrast ratios are most relevant for the diagnostic task. SNR increases with decreasing tube voltage while C/CB increases with increasing tube voltage.

Self-stabilized discharge filament in plane-parallel barrier discharge configuration: formation, breakdown mechanism, and memory effects

NASA Astrophysics Data System (ADS)

Tschiersch, R.; Nemschokmichal, S.; Bogaczyk, M.; Meichsner, J.

2017-10-01

Single self-stabilized discharge filaments were investigated in the plane-parallel electrode configuration. The barrier discharge was operated inside a gap of 3 mm shielded by glass plates to both electrodes, using helium-nitrogen mixtures and a square-wave feeding voltage at a frequency of 2 kHz. The combined application of electrical measurements, ICCD camera imaging, optical emission spectroscopy and surface charge diagnostics via the electro-optic Pockels effect allowed the correlation of the discharge development in the volume and on the dielectric surfaces. The formation criteria and existence regimes were found by systematic variation of the nitrogen admixture to helium, the total pressure and the feeding voltage amplitude. Single self-stabilized discharge filaments can be operated over a wide parameter range, foremost, by significant reduction of the voltage amplitude after the operation in the microdischarge regime. Here, the outstanding importance of the surface charge memory effect on the long-term stability was pointed out by the recalculated spatio-temporally resolved gap voltage. The optical emission revealed discharge characteristics that are partially reminiscent of both the glow-like barrier discharge and the microdischarge regime, such as a Townsend pre-phase, a fast cathode-directed ionization front during the breakdown and radially propagating surface discharges during the afterglow.

Tuning of optical and electrical properties of wide band gap Fe:SnO2/Li:NiO p- n junctions using 80 MeV oxygen ion beam

NASA Astrophysics Data System (ADS)

Mistry, Bhaumik V.; Avasthi, D. K.; Joshi, U. S.

2016-12-01

Electrical and optical properties of pristine and swift heavy ion (SHI) irradiated p- n junction diode have been investigated for advanced electronics application. Fe:SnO2/Li:NiO p- n junction was fabricated by using pulsed laser deposition on c-sapphire substrate. The optical band gaps of Fe:SnO2 and Li:NiO films were obtained to be 3.88 and 3.37 eV, respectively. The current-voltage characteristics of the oxide-based p- n junction showed a rectifying behaviour with turn-on voltage of 0.95 V. The oxide-based p- n junction diode was irradiated to 80 MeV O+6 ions with 1 × 1012 ions/cm2 fluence. Decrease in grain size due to SHI irradiation is confirmed by the grazing angle X-ray diffraction and atomic force microscopy. In comparison with the pristine p- n junction diode, O+6 ion irradiated p-n junction diode shows the increase of surface roughness and decrease of percentage transmittance in visible region. For irradiated p- n junction diode, current-voltage curve has still rectifying behaviour but exhibits lower turn-on voltage than that of virgin p- n junction diode.

Recent Developments in High Voltage Research in the United Kingdom

NASA Astrophysics Data System (ADS)

Haddad, A. Manu

This paper gives an overview of research activities in the area of high voltage engineering in UK universities. It summarises the main activities of all active high voltage research groups. Furthermore, current research drivers and funding sources for research in the area are described, and the main initiatives to safeguard the health of the discipline are presented.

Pado, a fluorescent protein with proton channel activity can optically monitor membrane potential, intracellular pH, and map gap junctions.

PubMed

Kang, Bok Eum; Baker, Bradley J

2016-04-04

An in silico search strategy was developed to identify potential voltage-sensing domains (VSD) for the development of genetically encoded voltage indicators (GEVIs). Using a conserved charge distribution in the S2 α-helix, a single in silico search yielded most voltage-sensing proteins including voltage-gated potassium channels, voltage-gated calcium channels, voltage-gated sodium channels, voltage-gated proton channels, and voltage-sensing phosphatases from organisms ranging from mammals to bacteria and plants. A GEVI utilizing the VSD from a voltage-gated proton channel identified from that search was able to optically report changes in membrane potential. In addition this sensor was capable of manipulating the internal pH while simultaneously reporting that change optically since it maintains the voltage-gated proton channel activity of the VSD. Biophysical characterization of this GEVI, Pado, demonstrated that the voltage-dependent signal was distinct from the pH-dependent signal and was dependent on the movement of the S4 α-helix. Further investigation into the mechanism of the voltage-dependent optical signal revealed that inhibiting the dimerization of the fluorescent protein greatly reduced the optical signal. Dimerization of the FP thereby enabled the movement of the S4 α-helix to mediate a fluorescent response.

Pado, a fluorescent protein with proton channel activity can optically monitor membrane potential, intracellular pH, and map gap junctions

PubMed Central

Kang, Bok Eum; Baker, Bradley J.

2016-01-01

An in silico search strategy was developed to identify potential voltage-sensing domains (VSD) for the development of genetically encoded voltage indicators (GEVIs). Using a conserved charge distribution in the S2 α-helix, a single in silico search yielded most voltage-sensing proteins including voltage-gated potassium channels, voltage-gated calcium channels, voltage-gated sodium channels, voltage-gated proton channels, and voltage-sensing phosphatases from organisms ranging from mammals to bacteria and plants. A GEVI utilizing the VSD from a voltage-gated proton channel identified from that search was able to optically report changes in membrane potential. In addition this sensor was capable of manipulating the internal pH while simultaneously reporting that change optically since it maintains the voltage-gated proton channel activity of the VSD. Biophysical characterization of this GEVI, Pado, demonstrated that the voltage-dependent signal was distinct from the pH-dependent signal and was dependent on the movement of the S4 α-helix. Further investigation into the mechanism of the voltage-dependent optical signal revealed that inhibiting the dimerization of the fluorescent protein greatly reduced the optical signal. Dimerization of the FP thereby enabled the movement of the S4 α-helix to mediate a fluorescent response. PMID:27040905

Thermionic converter

DOEpatents

Rasor, Ned S.; Britt, Edward J.

1976-01-01

A gas-filled thermionic converter is provided with a collector and an emitter having a main emitter region and an auxiliary emitter region in electrical contact with the main emitter region. The main emitter region is so positioned with respect to the collector that a main gap is formed therebetween and the auxiliary emitter region is so positioned with respect to the collector that an auxiliary gap is formed therebetween partially separated from the main gap with access allowed between the gaps to allow ionizable gas in each gap to migrate therebetween. With heat applied to the emitter the work function of the auxiliary emitter region is sufficiently greater than the work function of the collector so that an ignited discharge occurs in the auxiliary gap and the work function of the main emitter region is so related to the work function of the collector that an unignited discharge occurs in the main gap sustained by the ions generated in the auxiliary gap. A current flows through a load coupled across the emitter and collector due to the unignited discharge in the main gap.

The research of digital circuit system for high accuracy CCD of portable Raman spectrometer

NASA Astrophysics Data System (ADS)

Yin, Yu; Cui, Yongsheng; Zhang, Xiuda; Yan, Huimin

2013-08-01

The Raman spectrum technology is widely used for it can identify various types of molecular structure and material. The portable Raman spectrometer has become a hot direction of the spectrometer development nowadays for its convenience in handheld operation and real-time detection which is superior to traditional Raman spectrometer with heavy weight and bulky size. But there is still a gap for its measurement sensitivity between portable and traditional devices. However, portable Raman Spectrometer with Shell-Isolated Nanoparticle-Enhanced Raman Spectroscopy (SHINERS) technology can enhance the Raman signal significantly by several orders of magnitude, giving consideration in both measurement sensitivity and mobility. This paper proposed a design and implementation of driver and digital circuit for high accuracy CCD sensor, which is core part of portable spectrometer. The main target of the whole design is to reduce the dark current generation rate and increase signal sensitivity during the long integration time, and in the weak signal environment. In this case, we use back-thinned CCD image sensor from Hamamatsu Corporation with high sensitivity, low noise and large dynamic range. In order to maximize this CCD sensor's performance and minimize the whole size of the device simultaneously to achieve the project indicators, we delicately designed a peripheral circuit for the CCD sensor. The design is mainly composed with multi-voltage circuit, sequential generation circuit, driving circuit and A/D transition parts. As the most important power supply circuit, the multi-voltage circuits with 12 independent voltages are designed with reference power supply IC and set to specified voltage value by the amplifier making up the low-pass filter, which allows the user to obtain a highly stable and accurate voltage with low noise. What's more, to make our design easy to debug, CPLD is selected to generate sequential signal. The A/D converter chip consists of a correlated double sampler; a digitally controlled variable gain amplifier and a 16-bit A/D converter which can help improve the data quality. And the acquired digital signals are transmitted into the computer via USB 2.0 data port. Our spectrometer with SHINERS technology can acquire the Raman spectrum signals efficiently in long time integration and weak signal environment, and the size of our system is well controlled for portable application.

Dual-frequency glow discharges in atmospheric helium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Xiaojiang; Guo, Ying; Magnetic Confinement Fusion Research Center, Ministry of Education of the People's Republic of China, Shanghai 201620

2015-10-15

In this paper, the dual-frequency (DF) glow discharges in atmospheric helium were experimented by electrical and optical measurements in terms of current voltage characteristics and optical emission intensity. It is shown that the waveforms of applied voltages or discharge currents are the results of low frequency (LF) waveforms added to high frequency (HF) waveforms. The HF mainly influences discharge currents, and the LF mainly influences applied voltages. The gas temperatures of DF discharges are mainly affected by HF power rather than LF power.

Novel zero voltage transition pulse width modulation flyback converter

NASA Astrophysics Data System (ADS)

Adib, Ehsan; Farzanehfard, Hosein

2010-09-01

In this article, a new zero voltage (ZV) transition flyback converter is introduced which uses a simple auxiliary circuit. In this converter, ZV switching condition is achieved for the converter switch while zero current switching condition is attained for the auxiliary switch. There is no additional voltage and current stress on the main switch. Main diode, auxiliary circuit voltage and current ratings are low. The proposed converter is analysed and design procedure is discussed. The presented experimental results of a prototype converter justify the theoretical analysis.

Design and validation of a high-voltage levitation circuit for electrostatic accelerometers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, G.; Wu, S. C.; Zhou, Z. B.

2013-12-15

A simple high-voltage circuit with a voltage range of 0 to 900 V and an open-loop bandwidth of 11 kHz is realized by using an operational amplifier and a MOSFET combination. The circuit is used for the levitation of a test mass of 71 g, suspended below the top-electrodes with a gap distance of 57 μm, so that the performance of an electrostatic accelerometer can be tested on the ground. The translation noise of the accelerometer, limited by seismic noise, is about 4 × 10{sup −8} m/s{sup 2}/Hz{sup 1/2} at 0.1 Hz, while the high-voltage coupling noise is one-order ofmore » magnitude lower.« less

Energy compression of nanosecond high-voltage pulses based on two-stage hybrid scheme

NASA Astrophysics Data System (ADS)

Ulmaskulov, M. R.; Mesyats, G. A.; Sadykova, A. G.; Sharypov, K. A.; Shpak, V. G.; Shunailov, S. A.; Yalandin, M. I.

2017-04-01

Test results of high-voltage subnanosecond pulse generator with a hybrid, two-stage energy compression scheme are presented. After the first compression section with a gas discharger, a ferrite-filled gyromagnetic nonlinear transmitting line is used. The offered technical solution makes it possible to increase the voltage pulse amplitude from -185 kV to -325 kV, with a 2-ns pulse rise time minimized down to ˜180 ps. For the small output voltage amplitude of -240 kV, the shortest pulse front of ˜85 ps was obtained. The generator with maximum amplitude was utilized to form an ultra-short flow of runaway electrons in air-filled discharge gap with particles' energy approaching to 700 keV.

Electron launching voltage monitor

DOEpatents

Mendel, C.W.; Savage, M.E.

1992-03-17

An electron launching voltage monitor measures MITL voltage using a relationship between anode electric field and electron current launched from a cathode-mounted perturbation. An electron launching probe extends through and is spaced from the edge of an opening in a first MITL conductor, one end of the launching probe being in the gap between the MITL conductor, the other end being adjacent a first side of the first conductor away from the second conductor. A housing surrounds the launching probe and electrically connects the first side of the first conductor to the other end of the launching probe. A detector detects the current passing through the housing to the launching probe, the detected current being representative of the voltage between the conductors. 5 figs.

The negative hydrogen Penning ion gauge ion source for KIRAMS-13 cyclotron

DOE Office of Scientific and Technical Information (OSTI.GOV)

An, D. H.; Jung, I. S.; Kang, J.

2008-02-15

The cold-cathode-type Penning ion gauge (PIG) ion source for the internal ion source of KIRAMS-13 cyclotron has been used for generation of negative hydrogen ions. The dc H-beam current of 650 {mu}A from the PIG ion source with the Dee voltage of 40 kV and arc current of 1.0 A is extrapolated from the measured dc extraction beam currents at the low extraction dc voltages. The output optimization of PIG ion source in the cyclotron has been carried out by using various chimneys with different sizes of the expansion gap between the plasma boundary and the chimney wall. This papermore » presents the results of the dc H-extraction measurement and the expansion gap experiment.« less

Optically isolated, 2 kHz repetition rate, 4 kV solid-state pulse trigger generator.

PubMed

Barnett, D H; Parson, J M; Lynn, C F; Kelly, P M; Taylor, M; Calico, S; Scott, M C; Dickens, J C; Neuber, A A; Mankowski, J J

2015-03-01

This paper presents the design and operation characteristics of a solid-state high voltage pulse generator. Its primary utilization is aimed at triggering a gaseous spark gap with high repeatability. Specifically, the trigger generator is designed to achieve a risetime on the order of 0.1 kV/ns to trigger the first stage, trigatron spark gap of a 10-stage, 500 kV Marx generator. The major design components are comprised of a 60 W constant current DC-DC converter for high voltage charging, a single 4 kV thyristor, a step-up pulse transformer, and magnetic switch for pulse steepening. A risetime of <30 ns and pulse magnitude of 4 kV is achieved matching the simulated performance of the design.

Application of Stochastic Automata Networks for Creation of Continuous Time Markov Chain Models of Voltage Gating of Gap Junction Channels

PubMed Central

Pranevicius, Henrikas; Pranevicius, Mindaugas; Pranevicius, Osvaldas; Bukauskas, Feliksas F.

2015-01-01

The primary goal of this work was to study advantages of numerical methods used for the creation of continuous time Markov chain models (CTMC) of voltage gating of gap junction (GJ) channels composed of connexin protein. This task was accomplished by describing gating of GJs using the formalism of the stochastic automata networks (SANs), which allowed for very efficient building and storing of infinitesimal generator of the CTMC that allowed to produce matrices of the models containing a distinct block structure. All of that allowed us to develop efficient numerical methods for a steady-state solution of CTMC models. This allowed us to accelerate CPU time, which is necessary to solve CTMC models, ∼20 times. PMID:25705700

Non-native Co-, Mn-, and Ti-oxyhydroxide nanocrystals in ferritin for high efficiency solar energy conversion

NASA Astrophysics Data System (ADS)

Erickson, S. D.; Smith, T. J.; Moses, L. M.; Watt, R. K.; Colton, J. S.

2015-01-01

Quantum dot solar cells seek to surpass the solar energy conversion efficiencies achieved by bulk semiconductors. This new field requires a broad selection of materials to achieve its full potential. The 12 nm spherical protein ferritin can be used as a template for uniform and controlled nanocrystal growth, and to then house the nanocrystals for use in solar energy conversion. In this study, precise band gaps of titanium, cobalt, and manganese oxyhydroxide nanocrystals within ferritin were measured, and a change in band gap due to quantum confinement effects was observed. The range of band gaps obtainable from these three types of nanocrystals is 2.19-2.29 eV, 1.93-2.15 eV, and 1.60-1.65 eV respectively. From these measured band gaps, theoretical efficiency limits for a multi-junction solar cell using these ferritin-enclosed nanocrystals are calculated and found to be 38.0% for unconcentrated sunlight and 44.9% for maximally concentrated sunlight. If a ferritin-based nanocrystal with a band gap similar to silicon can be found (i.e. 1.12 eV), the theoretical efficiency limits are raised to 51.3% and 63.1%, respectively. For a current matched cell, these latter efficiencies become 41.6% (with an operating voltage of 5.49 V), and 50.0% (with an operating voltage of 6.59 V), for unconcentrated and maximally concentrated sunlight respectively.

Investigation of a compact coaxially fed switched oscillator

NASA Astrophysics Data System (ADS)

Wang, Yuwei; Chen, Dongqun; Zhang, Jiande; Cao, Shengguang; Li, Da; Liu, Chebo

2013-09-01

To generate a relative high frequency mesoband microwave, a compact coaxially fed transmission line switched oscillator with high voltage capability is investigated. The characteristic impedance and voltage capability of the low impedance transmission line (LITL) have been analyzed. It is shown that the working voltage of the oscillator can reach up to 200 kV when it is filled by pressurized nitrogen and charged by a nanosecond driving source. By utilizing a commercial electromagnetic simulation code, the transient performance of the switched oscillator with a lumped resistance load is simulated. It is illustrated that the center frequency of the output signal reaches up to ˜0.6 GHz when the spark gap practically closes with a single channel. Besides, the influence of the closing mode and rapidity of the spark gap, the permittivity of the insulator at the output end of the LITL, and the load impedance on the transient performance of the designed oscillator has been analyzed in quantification. Finally, the good transient performance of the switched oscillator has been preliminarily proved by the experiment.

The Breakdown Characteristics of the Silicone Oil for Electric Power Apparatus

NASA Astrophysics Data System (ADS)

Yoshida, Hisashi; Yanabu, Satoru

The basic breakdown characteristics of the silicone oil as an insulating medium was studied with aim of realization of electric power apparatus which may be considered to be SF6 free and flame-retarding. As the first step, the impulse breakdown characteristics was measured with three kinds of electrodes whose electric field distributions differed. The breakdown characteristics in silicone oil was explained in relation to stressed oil volume (SOV) and the breakdown stress. At the second step the surface breakdown characteristic for impulse voltage was measured with two kinds of insulators which was set to between plane electrodes. The surface breakdown characteristic for impulse voltage was explained in relation to the ratio of the relative permittivity of oil and insulator. And on the third step, the breakdown characteristics of oil gap after interrupting small capacitive current was studied. In this experiment, the disconnecting switch to interrupt capacitive current was simulated by oil gap after interrupting impulse current, and to measure breakdown characteristics the high impulse voltage was subsequently applied. The breakdown stress in silicone oil after application of impulse current was discussed for insulation recovery characteristics.

Composition-graded nanowire solar cells fabricated in a single process for spectrum-splitting photovoltaic systems.

PubMed

Caselli, Derek; Liu, Zhicheng; Shelhammer, David; Ning, Cun-Zheng

2014-10-08

Nanomaterials such as semiconductor nanowires have unique features that could enable novel optoelectronic applications such as novel solar cells. This paper aims to demonstrate one such recently proposed concept: Monolithically Integrated Laterally Arrayed Multiple Band gap (MILAMB) solar cells for spectrum-splitting photovoltaic systems. Two cells with different band gaps were fabricated simultaneously in the same process on a single substrate using spatially composition-graded CdSSe alloy nanowires grown by the Dual-Gradient Method in a chemical vapor deposition system. CdSSe nanowire ensemble devices tested under 1 sun AM1.5G illumination achieved open-circuit voltages up to 307 and 173 mV and short-circuit current densities as high as 0.091 and 0.974 mA/cm(2) for the CdS- and CdSe-rich cells, respectively. The open-circuit voltages were roughly three times those of similar CdSSe film cells fabricated for comparison due to the superior optical quality of the nanowires. I-V measurements were also performed using optical filters to simulate spectrum-splitting. The open-circuit voltages and fill factors of the CdS-rich subcells were uniformly larger than the corresponding CdSe-rich cells for similar photon flux, as expected. This suggests that if all wires can be contacted, the wide-gap cell is expected to have greater output power than the narrow-gap cell, which is the key to achieving high efficiencies with spectrum-splitting. This paper thus provides the first proof-of-concept demonstration of simultaneous fabrication of MILAMB solar cells. This approach to solar cell fabrication using single-crystal nanowires for spectrum-splitting photovoltaics could provide a future low-cost high-efficiency alternative to the conventional high-cost high-efficiency tandem cells.

Model for intensity calculation in electron guns

NASA Astrophysics Data System (ADS)

Doyen, O.; De Conto, J. M.; Garnier, J. P.; Lefort, M.; Richard, N.

2007-04-01

The calculation of the current in an electron gun structure is one of the main investigations involved in the electron gun physics understanding. In particular, various simulation codes exist but often present some important discrepancies with experiments. Moreover, those differences cannot be reduced because of the lack of physical information in these codes. We present a simple physical three-dimensional model, valid for all kinds of gun geometries. This model presents a better precision than all the other simulation codes and models encountered and allows the real understanding of the electron gun physics. It is based only on the calculation of the Laplace electric field at the cathode, the use of the classical Child-Langmuir's current density, and a geometrical correction to this law. Finally, the intensity versus voltage characteristic curve can be precisely described with only a few physical parameters. Indeed, we have showed that only the shape of the electric field at the cathode without beam, and a distance of an equivalent infinite planar diode gap, govern mainly the electron gun current generation.

TiN coated aluminum electrodes for DC high voltage electron guns

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A., E-mail: aelmusta@odu.edu; Taus, Rhys

Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloymore » (Ti-6Al-4V). Following gas conditioning, each TiN-coated aluminum electrode reached −225 kV bias voltage while generating less than 100 pA of field emission (<10 pA) using a 40 mm cathode/anode gap, corresponding to field strength of 13.7 MV/m. Smaller gaps were studied to evaluate electrode performance at higher field strength with the best performing TiN-coated aluminum electrode reaching ∼22.5 MV/m with field emission less than 100 pA. These results were comparable to those obtained from our best-performing electrodes manufactured from stainless steel, titanium alloy and niobium, as reported in references cited below. The TiN coating provided a very smooth surface and with mechanical properties of the coating (hardness and modulus) superior to those of stainless steel, titanium-alloy, and niobium electrodes. These features likely contributed to the improved high voltage performance of the TiN-coated aluminum electrodes.« less

Analysis, design, and control of a transcutaneous power regulator for artificial hearts.

PubMed

Qianhong Chen; Siu Chung Wong; Tse, C K; Xinbo Ruan

2009-02-01

Based on a generic transcutaneous transformer model, a remote power supply using a resonant topology for use in artificial hearts is analyzed and designed for easy controllability and high efficiency. The primary and secondary windings of the transcutaneous transformer are positioned outside and inside the human body, respectively. In such a transformer, the alignment and gap may change with external positioning. As a result, the coupling coefficient of the transcutaneous transformer is also varying, and so are the two large leakage inductances and the mutual inductance. Resonant-tank circuits with varying resonant-frequency are formed from the transformer inductors and external capacitors. For a given range of coupling coefficients, an operating frequency corresponding to a particular coupling coefficient can be found, for which the voltage transfer function is insensitive to load. Prior works have used frequency modulation to regulate the output voltage under varying load and transformer coupling. The use of frequency modulation may require a wide control frequency range which may extend well above the load insensitive frequency. In this paper, study of the input-to-output voltage transfer function is carried out, and a control method is proposed to lock the switching frequency at just above the load insensitive frequency for optimized efficiency at heavy loads. Specifically, operation at above resonant of the resonant circuits is maintained under varying coupling-coefficient. Using a digital-phase-lock-loop (PLL), zero-voltage switching is achieved in a full-bridge converter which is also programmed to provide output voltage regulation via pulsewidth modulation (PWM). A prototype transcutaneous power regulator is built and found to to perform excellently with high efficiency and tight regulation under variations of the alignment or gap of the transcutaneous transformer, load and input voltage.

Laser initiated spark development in an air gap.

PubMed

Lindner, F W; Rudolph, W; Brumme, G; Fischer, H

1975-09-01

Spark development is studied by 20-nsec image converter photography. A diffuse and transparent prechannel bridges the gap from the top of the metal vapor jet, which has counterelectrode potential. The prechannel cuts off the development of the cone shaped jet with increasing gap voltage. The final breakdown is initiated by a z-axis, laser induced filament, which expands into the prechannel volume within less, similar10 nsec. This interval represents the final high current thermalization phase of the breakdown. Thermal expansion of the initial spark channel (Braginskii) follows.

Surface Studies Of Dielectric Materials Used In Spark Gaps

DTIC Science & Technology

1983-06-01

on the virgin sample shows 78.1% carbon, 11.5’% oxygen, 5.2% nitrogen and 5.2% silicon . The usual composition of nylon is C6H110N which would give...copper composite ) electrodes. The spark gap selfbreaks at 40-45kV and switches approximately 1 kJ of energy in 2 ~s at a maximum rep-rate of 2... composite , two different tungsten- copper composites (K-33 and Elkonite), or stainless steel. The spark gap normally operates at a voltage of less than

Energy-gap spectroscopy of superconductors using a tunneling microscope

NASA Technical Reports Server (NTRS)

Le Duc, H. G.; Kaiser, W. J.; Stern, J. A.

1987-01-01

A unique scanning tunneling microscope (STM) system has been developed for spectroscopy of the superconducting energy gap. High-resolution control of tunnel current and voltage allows for measurement of superconducting properties at tunnel resistance levels 100-1000 greater than that achieved in prior work. The previously used STM methods for superconductor spectroscopy are compared to those developed for the work reported here. Superconducting energy-gap spectra are reported for three superconductors, Pb, PbBi, and NbN, over a range of tunnel resistance. The measured spectra are compared directly to theory.

Multi-gap high impedance plasma opening switch

DOEpatents

Mason, R.J.

1996-10-22

A high impedance plasma opening switch having an anode and a cathode and at least one additional electrode placed between the anode and cathode is disclosed. The presence of the additional electrodes leads to the creation of additional plasma gaps which are in series, increasing the net impedance of the switch. An equivalent effect can be obtained by using two or more conventional plasma switches with their plasma gaps wired in series. Higher impedance switches can provide high current and voltage to higher impedance loads such as plasma radiation sources. 12 figs.

Triggering regime of oil-filled trigatron dischargers

NASA Astrophysics Data System (ADS)

Kapishnikov, N. K.; Muratov, V. M.

1986-11-01

A comparative analysis made in [1, 2] of different types of regulable high-voltage dischargers with liquid insulation showed that trigatrons are currently the most promising for use in high-voltage pulse-operated devices due to their simplicity and reliability. Two basic mechanisms of discharge initiation can be realized in trigatrons — initiation by intensification of the field in the region of the control electrode [2, 3], and triggering by a spark in the ignition gap [4, 5]. The first type of trigatron has been studied sufficiently only for short voltage periods [3, 6, 7], so it is used mainly in switching the pulse-shaping lines of powerful nanosecond pulse generators with “rapid” (0.5 1.5 μsec) charging [8, 9]. Almost no use is now made of the second type of trigatron switch in high-voltage pulse technology due to its unsatisfactory time characteristics. Here we report results of a study of the time characteristics of both types of oil-filled trigatrons operating in a regime whereby they form the leading edge of rectangular voltage pulses with amplitudes up to 800 kV and durations of 1 100 μsec. The goal is to find the optimum conditions for triggering of trigatron dischargers with liquid insulation in the region of microsecond voltage discharges. Experiments were conducted on the unit in [10]. The test discharger was placed in a cylindrical chamber 45 cm in diameter and 27 cm in length. The high-voltage electrode of the discharger was in the form of a cylinder 20 cm in diameter positioned coaxially inside the chamber. The 10-mm-diameter ground electrode was positioned radially in a branch pipe 8 cm long. The control electrode was placed in a 2-cm-diameter hole in the center of the ground electrode. The chamber with the test discharge was filled with transformer oil with a breakdown voltage of about 50 kV. The oil was not replaced or cleaned during the experiment. We did not find that contamination of the oil by discharge products had any effect on the time characteristics of either type of discharger. The results were analyzed by the least squares method, with 50 measurements to a point (it was found that time lag of the discharger triggering conforms approximately to a normal distribution law for both types of discharger).

Reluctance apparatus for flywheel energy storage

DOEpatents

Hull, John R.

2000-01-01

A motor generator for providing high efficiency, controlled voltage output or storage of energy in a flywheel system. A motor generator includes a stator of a soft ferromagnetic material, a motor coil and a generator coil, and a rotor has at least one embedded soft ferromagnetic piece. Control of voltage output is achieved by use of multiple stator pieces and multiple rotors with controllable gaps between the stator pieces and the soft ferromagnetic piece.

Temporally Shaped Current Pulses on a Two-Cavity Linear Transformer Driver System

DTIC Science & Technology

2011-06-01

essentially at a fraction of the total switch voltage. Non-uniform corona current characteristics of the different corona needles could cause imperfect...withstand twice the capacitor voltage. A pulse applied to the switch trigger electrodes initiate closure of each switch. We have arranged triggering in...internal cavity potential to ground, allows the trigger electrode of the spark gaps to be at ground potential during charging, and eliminates a

Investigation of nanosecond pulsed dielectric barrier discharge using plate-to-plate electrode with asymmetric dielectric arrangement in airflow

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qi, Haicheng; School of Physics Science and Technology, Anshan Normal University, Anshan 114005; Fan, Zhihui

Atmospheric pressure dielectric barrier discharge plasma is produced in airflow by applying nanosecond high voltage pulses with peak voltage about 35 kV and rising time about 40 ns on a plate-to-plate electrode arrangement. The effects of airflow rate (0–50 m/s) on the discharge characteristics are investigated under different barrier conditions (the bare anode case and the bare cathode case). For both cases, the breakdown voltage and the time lag increase distinctly and the discharge intensity decreases sharply when the airflow rate increases from 0 to 30 m/s, and then keep almost constant until the airflow rate is further increased to 50 m/s. For the baremore » anode case (the cathode is covered by dielectric plate), the discharge mode transforms gradually from filamentary to diffuse discharge with the increasing airflow rate. While for the bare cathode case, some micro-discharge channels are still excited, though the discharge becomes more diffuse when the airflow rate is higher than 30 m/s. By acquiring the time-resolved images of the discharge, it is proved that it is the primary discharge which becomes diffuse when airflow is introduced and the following two discharges of the same voltage pulse occur principally at the positions where the primary discharge is more intense. And in both cases, the plasma temperatures are reduced, but the degree is different. All the phenomena can be explained mainly by the variation of the space charge distribution when the airflow is introduced into the discharge gap. And it is indicated that the bare anode case has an advantage in obtaining diffuse discharge.« less

Impurity-generated non-Abelions

NASA Astrophysics Data System (ADS)

Simion, G.; Kazakov, A.; Rokhinson, L. P.; Wojtowicz, T.; Lyanda-Geller, Y. B.

2018-06-01

Two classes of topological superconductors and Majorana modes in condensed matter systems are known to date: one in which disorder induced by impurities strongly suppresses topological superconducting gap and is detrimental to Majorana modes, and another where Majorana fermions are protected by a disorder-robust topological superconductor gap. Observation and control of Majorana fermions and other non-Abelions often requires a symmetry of an underlying system leading to a gap in the single-particle or quasiparticle spectra. In semiconductor structures, impurities that provide charge carriers introduce states into the gap and enable conductance and proximity-induced superconductivity via the in-gap states. Thus a third class of topological superconductivity and Majorana modes emerges, in which topological superconductivity and Majorana fermions appear exclusively when impurities generate in-gap states. We show that impurity-enabled topological superconductivity is realized in a quantum Hall ferromagnet, when a helical domain wall is coupled to an s -wave superconductor. As an example of emergence of topological superconductivity in quantum Hall ferromagnets, we consider the integer quantum Hall effect in Mn-doped CdTe quantum wells. Recent experiments on transport through the quantum Hall ferromagnet domain wall in this system indicated a vital role of impurities in the conductance, but left unresolved the question whether impurities preclude generation of Majorana fermions and other non-Abelions in such systems in general. Here, solving a general quantum-mechanical problem of impurity bound states in a system of spin-orbit coupled Landau levels, we demonstrate that impurity-induced Majorana modes emerge at boundaries between topological and conventional superconducting states generated in a domain wall due to proximity to an s superconductor. We consider both short-range disorder and a smooth random potential. The phase diagram of the system is defined by characteristic disorder, gate voltage induced angular momentum splitting of impurity levels, and by a proximity superconducting gap. The phase diagram exhibits two ranges of gate voltage with conventional superconducting order separated by a gate voltage range with topological superconductivity. We show that electrostatic control of domain walls in an integer quantum Hall ferromagnet allows manipulation of Majorana fermions. Ferromagnetic transitions in the fractional quantum Hall regime may lead to the formation and electrostatic control of higher order non-Abelian excitations.

On electrode pinning and charge blocking layers in organic solar cells

NASA Astrophysics Data System (ADS)

Magen, Osnat; Tessler, Nir

2017-05-01

We use device modelling for studying the losses introduced by metallic electrodes in organic solar cells' device structure. We first discuss the inclusion of pinning at the integer charge transfer state in device models, with and without using the image charge potential. In the presence of disorder, the space charge introduced due to the image potential enhances the pinning by more than 0.2 eV. The explicit introduction of the image potential creates band-gap narrowing at the contact, thus affecting both dark leakage current and photo conversion efficiency. We find that there are two regimes in which the contacts may limit the performance. For low (moderate) barriers, the contacts introduce minority carrier recombination at the contacts that adds to the bulk recombination channels. Only for high barriers, the contacts directly limit the open circuit voltage and impose a value that is equal to the contact's energy difference. Examining the device structures with blocking layers, we find that these are mainly useful for the low to moderate contacts' barriers and that for the high barrier case, the enhancement of open circuit voltage may be accompanied by the introduction of serial resistance or S shape.

Enhanced performance of polymer solar cells by employing a ternary cascade energy structure.

PubMed

An, Qiaoshi; Zhang, Fujun; Li, Lingliang; Zhuo, Zuliang; Zhang, Jian; Tang, Weihua; Teng, Feng

2014-08-14

We present a route to successfully tackle the two main limitations, low open circuit voltage (Voc) and limited short circuit-density (Jsc), of polymer solar cells (PSCs) based on poly(3-hexylthiophene) (P3HT) as an electron-donor. The indene-C60 bisadduct (ICBA) was selected as an electron acceptor to improve the open circuit voltage (Voc). The narrow band gap polymer poly[(4,8-bis-(2-ethylhexyloxy)-benzo[1,2-b:4,5-b']dithiophene)-2,6-diyl-alt-(4-(2-ethylhexanoyl)-thieno[3,4-b]thiophene)-2,6-diyl] (PBDTTT-C), as a complementary electron-donor material, was doped into the host system of P3HT:ICBA to form ternary cascade energy structured PSCs with increased Jsc. The power conversion efficiency (PCE) of P3HT:ICBA-based cells was improved from 3.32% to 4.38% by doping with 3 wt% PBDTTT-C with 1 min 150 °C annealing treatment. The 4.38% PCE of ternary PSCs is still larger than the 3.79% PCE of PSCs based on P3HT:ICBA with 10 minutes 150 °C annealing treatment.

Experimental Study on the Dielectric Breakdown Voltage of the Insulating Oil Mixed with Magnetic Nanoparticles

NASA Astrophysics Data System (ADS)

Lee, Jong-Chul; Kim, Woo-Young

In this study, we have measured the dielectric breakdown voltage of transformer oil-based nanofluids in accordance with IEC 156 standard and have investigated the dielectric breakdown performance with the application of an external magnetic field and different volume concentrations of magnetic nanoparticles. It is confirmed that the dielectric breakdown voltage of pure transformer oil is about 10 kV with a gap distance of 1 mm between electrodes. In the case of our transformer oil-based nanofluids with 0.08% < Φ < 0.39% (Φ means the volume concentration of magnetic nanoparticles in the fluid), the dielectric breakdown voltage is three times higher than that of pure transformer oil. Furthermore, when the external magnetic field is applied under the experimental vessel, the dielectric breakdown voltage of the nanofluids is above 40 kV, which is 30% higher than that without the external magnetic field.

Treatment of emulsified oils by electrocoagulation: pulsed voltage applications.

PubMed

Genc, Ayten; Bakirci, Busra

2015-01-01

The effect of pulsed voltage application on energy consumption during electrocoagulation was investigated. Three voltage profiles having the same arithmetic average with respect to time were applied to the electrodes. The specific energy consumption for these profiles were evaluated and analyzed together with oil removal efficiencies. The effects of applied voltages, electrode materials, electrode configurations, and pH on oil removal efficiency were determined. Electrocoagulation experiments were performed by using synthetic and real wastewater samples. The pulsed voltages saved energy during the electrocoagulation process. In continuous operation, energy saving was as high as 48%. Aluminum electrodes used for the treatment of emulsified oils resulted in higher oil removal efficiencies in comparison with stainless steel and iron electrodes. When the electrodes gap was less than 1 cm, higher oil removal efficiencies were obtained. The highest oil removal efficiencies were 95% and 35% for the batch and continuous operating modes, respectively.

Effects of various applied voltages on physical properties of TiO2 nanotubes by anodization method

NASA Astrophysics Data System (ADS)

Hoseinzadeh, T.; Ghorannevis, Z.; Ghoranneviss, M.; Sari, A. H.; Salem, M. K.

2017-09-01

Three steps anodization process is used to synthesize highly ordered and uniform multilayered titanium oxide (TiO2) nanotubes and effect of different anodization voltages are studied on their physical properties such as structural, morphological and optical. The crystalized structure of the synthesized tubes is investigated by X-ray diffractometer analysis. To study the morphology of the tubes, field emission scanning electron microscopy is used, which showed that the wall thicknesses and the diameters of the tubes are affected by the different anodization voltages. Moreover, optical studies performed by diffuse reflection spectra suggested that band gap of the TiO2 nanotubes are also changed by applying different anodization voltages. In this study using physical investigations, an optimum anodization voltage is obtained to synthesize the uniform crystalized TiO2 nanotubes with suitable diameter, wall thickness and optical properties.

Metal nanoparticle film–based room temperature Coulomb transistor

PubMed Central

Willing, Svenja; Lehmann, Hauke; Volkmann, Mirjam; Klinke, Christian

2017-01-01

Single-electron transistors would represent an approach to developing less power–consuming microelectronic devices if room temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small, self-assembled, colloidal, metal nanoparticles on a back-gate device architecture, which leads to well-defined and well-controllable transistor characteristics. This Coulomb transistor has three main advantages. By using the scalable Langmuir-Blodgett method, we combine high-quality chemically synthesized metal nanoparticles with standard lithography techniques. The resulting transistors show on/off ratios above 90%, reliable and sinusoidal Coulomb oscillations, and room temperature operation. Furthermore, this concept allows for versatile tuning of the device properties such as Coulomb energy gap and threshold voltage, as well as period, position, and strength of the oscillations. PMID:28740864

Non-contact current and voltage sensor having detachable housing incorporating multiple ferrite cylinder portions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carpenter, Gary D.; El-Essawy, Wael; Ferreira, Alexandre Peixoto

2016-04-26

A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing formed from two portions that mechanically close around the wire and that contain the current and voltage sensors. The current sensor is a ferrite cylinder formed from at least three portions that form the cylindermore » when the sensor is closed around the wire with a hall effect sensor disposed in a gap between two of the ferrite portions along the circumference to measure current. A capacitive plate or wire is disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.« less

Utility-Scale Solar Power Converter: Agile Direct Grid Connect Medium Voltage 4.7-13.8 kV Power Converter for PV Applications Utilizing Wide Band Gap Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

Solar ADEPT Project: Satcon is developing a compact, lightweight power conversion device that is capable of taking utility-scale solar power and outputting it directly into the electric utility grid at distribution voltage levels—eliminating the need for large transformers. Transformers “step up” the voltage of the power that is generated by a solar power system so it can be efficiently transported through transmission lines and eventually “stepped down” to usable voltages before it enters homes and businesses. Power companies step up the voltage because less electricity is lost along transmission lines when the voltage is high and current is low. Satcon’smore » new power conversion devices will eliminate these heavy transformers and connect a utility-scale solar power system directly to the grid. Satcon’s modular devices are designed to ensure reliability—if one device fails it can be bypassed and the system can continue to run.« less

Inhibition of gap junction currents by the abused solvent toluene.

PubMed

Del Re, Angelo M; Woodward, John J

2005-05-09

Abused inhalants are a large class of compounds that are inhaled for their intoxicating and mood altering effects. They include chemicals with known therapeutic uses such as anesthetic gases as well as volatile organic solvents like toluene that are found in paint thinners and adhesives. Because of their widespread commercial use and availability, inhalants are often among the first drugs that children encounter and use of these compounds is often associated with adverse acute and long-term consequences. The cellular and molecular sites of action for abused inhalants is not well known although recent studies report that toluene and other organic solvents alter the activity of specific ligand- and voltage-gated ion channels that regulate cellular excitability. As part of an ongoing effort to define molecular sites of action for abused inhalants, this study examined the effect of toluene on the function of gap junction proteins endogenously expressed in human embryonic kidney (HEK 293) cells. Gap junctions allow cell-to-cell electrical communication as well as passage of small molecular weight substances and are critical for synchronizing cellular activity in certain tissues. Gap junction currents in HEK 293 cells were measured during brief voltage steps using patch-clamp electrophysiology and were blocked by known gap junction blockers confirming expression of connexin proteins in these cells. Toluene dose-dependently inhibited these conductances with threshold effects appearing at approximately 0.4 mM and near complete inhibition occurring at concentrations of 1 mM and higher. The estimated EC50 value for toluene inhibition of gap junction currents in HEK 293 cells was 0.57 mM. The results of these studies suggest that volatile solvents including toluene may produce some of their effects by disrupting inter-cellular communication mediated by gap junction proteins.

Characteristics of a Direct Current-driven plasma jet operated in open air

NASA Astrophysics Data System (ADS)

Li, Xuechen; Di, Cong; Jia, Pengying; Bao, Wenting

2013-09-01

A DC-driven plasma jet has been developed to generate a diffuse plasma plume by blowing argon into the ambient air. The plasma plume, showing a cup shape with a diameter of several centimeters at a higher voltage, is a pulsed discharge despite a DC voltage is applied. The pulse frequency is investigated as a function of the voltage under different gap widths and gas flow rates. Results show that plasma bullets propagate from the hollow needle to the plate electrode by spatially resolved measurement. A supposition about non-electroneutral trail of the streamer is proposed to interpret these experimental phenomena.

A Generalised Fault Protection Structure Proposed for Uni-grounded Low-Voltage AC Microgrids

NASA Astrophysics Data System (ADS)

Bui, Duong Minh; Chen, Shi-Lin; Lien, Keng-Yu; Jiang, Jheng-Lun

2016-04-01

This paper presents three main configurations of uni-grounded low-voltage AC microgrids. Transient situations of a uni-grounded low-voltage (LV) AC microgrid (MG) are simulated through various fault tests and operation transition tests between grid-connected and islanded modes. Based on transient simulation results, available fault protection methods are proposed for main and back-up protection of a uni-grounded AC microgrid. In addition, concept of a generalised fault protection structure of uni-grounded LVAC MGs is mentioned in the paper. As a result, main contributions of the paper are: (i) definition of different uni-grounded LVAC MG configurations; (ii) analysing transient responses of a uni-grounded LVAC microgrid through line-to-line faults, line-to-ground faults, three-phase faults and a microgrid operation transition test, (iii) proposing available fault protection methods for uni-grounded microgrids, such as: non-directional or directional overcurrent protection, under/over voltage protection, differential current protection, voltage-restrained overcurrent protection, and other fault protection principles not based on phase currents and voltages (e.g. total harmonic distortion detection of currents and voltages, using sequence components of current and voltage, 3I0 or 3V0 components), and (iv) developing a generalised fault protection structure with six individual protection zones to be suitable for different uni-grounded AC MG configurations.

Mechanism of formation of the response of a hydrogen gas sensor based on a silicon MOS diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gaman, V. I.; Balyuba, V. I.; Gritsyk, V. Yu.

2008-03-15

Experimental data on the dependence of the flat-band voltage and relaxation time for the capacitance of the space-charge region in an MOS diode (Pd-SiO{sub 2}-n-Si) on the hydrogen concentration in a hydrogen/air gaseous mixture are discussed. It is assumed that variation in the flat-band voltage U{sub fb} in an MOS structure with the thickness d = 369 nm subjected to a hydrogen/air gaseous mixture can be accounted for by the formation of dipoles in the Pd-SiO{sub 2} gap due to polarization of hydrogen atoms (H{sub a}). An analytical expression describing the dependence of variation in the flat-band voltage {Delta}U{sub fb}more » on the hydrogen concentration n{sub H{sub 2}} was derived. In MOS structures with d {<=} 4 nm (or MOS diodes), the value of {Delta}U{sub fb} is mainly controlled by passivation of the centers responsible for the presence of the surface acceptor-type centers at the SiO{sub 2}-n-Si interface by hydrogen atoms. Analytical expressions describing the dependences of {Delta}U{sub fb} and the capacitance relaxation time in the space-charge region on n{sub H{sub 2}} are derived. The values of the density of adsorption centers and the adsorption heat for hydrogen atoms at the Pd-SiO{sub 2} and SiO{sub 2}-n-Si interfaces are found.« less

Mechanism of formation of the response of a hydrogen gas sensor based on a silicon MOS diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gaman, V. I.; Balyuba, V. I.; Gritsyk, V. Yu.

2008-03-15

Experimental data on the dependence of the flat-band voltage and relaxation time for the capacitance of the space-charge region in an MOS diode (Pd-SiO{sub 2}-n-Si) on the hydrogen concentration in a hydrogen/air gaseous mixture are discussed. It is assumed that variation in the flat-band voltage U{sub fb} in an MOS structure with the thickness d = 369 nm subjected to a hydrogen/air gaseous mixture can be accounted for by the formation of dipoles in the Pd-SiO{sub 2} gap due to polarization of hydrogen atoms (H{sub a}). An analytical expression describing the dependence of variation in the flat-band voltage {delta}U{sub fb}more » on the hydrogen concentration n{sub H2} was derived. In MOS structures with d {<=} 4 nm (or MOS diodes), the value of {delta}U{sub fb} is mainly controlled by passivation of the centers responsible for the presence of the surface acceptor-type centers at the SiO{sub 2}-n-Si interface by hydrogen atoms. Analytical expressions describing the dependences of {delta}U{sub fb} and the capacitance relaxation time in the space-charge region on n{sub H2} are derived. The values of the density of adsorption centers and the adsorption heat for hydrogen atoms at the Pd-SiO{sub 2} and SiO{sub 2}-n-Si interfaces are found.« less

Laser-guided energetic discharges over large air gaps by electric-field enhanced plasma filaments

NASA Astrophysics Data System (ADS)

Théberge, Francis; Daigle, Jean-François; Kieffer, Jean-Claude; Vidal, François; Châteauneuf, Marc

2017-01-01

Recent works on plasma channels produced during the propagation of ultrashort and intense laser pulses in air demonstrated the guiding of electric discharges along the laser path. However, the short plasma lifetime limits the length of the laser-guided discharge. In this paper, the conductivity and lifetime of long plasma channels produced by ultrashort laser pulses is enhanced efficiently over many orders of magnitude by the electric field of a hybrid AC-DC high-voltage source. The AC electric pulse from a Tesla coil allowed to stimulate and maintain the highly conductive channel during few milliseconds in order to guide a subsequent 500 times more energetic discharge from a 30-kV DC source. This DC discharge was laser-guided over an air gap length of two metres, which is more than two orders of magnitude longer than the expected natural discharge length. Long plasma channel induced by laser pulses and stimulated by an external high-voltage source opens the way for wireless and efficient transportation of energetic current pulses over long air gaps and potentially for guiding lightning.

Photonic-band-gap gyrotron amplifier with picosecond pulses.

PubMed

Nanni, Emilio A; Jawla, Sudheer; Lewis, Samantha M; Shapiro, Michael A; Temkin, Richard J

2017-12-04

We report the amplification of 250 GHz pulses as short as 260 ps without observation of pulse broadening using a photonic-band-gap circuit gyrotron traveling-wave-amplifier. The gyrotron amplifier operates with a device gain of 38 dB and an instantaneous bandwidth of 8 GHz. The operational bandwidth of the amplifier can be tuned over 16 GHz by adjusting the operating voltage of the electron beam and the magnetic field. The amplifier uses a 30 cm long photonic-band-gap interaction circuit to confine the desired TE 03 -like operating mode while suppressing lower order modes which can result in undesired oscillations. The circuit gain is >55 dB for a beam voltage of 23 kV and a current of 700 mA. These results demonstrate the wide bandwidths and a high gain achievable with gyrotron amplifiers. The amplification of picosecond pulses of variable lengths, 260-800 ps, shows good agreement with the theory using the coupled dispersion relation and the gain-spectrum of the amplifier as measured with quasi-CW input pulses.

Photonic-band-gap gyrotron amplifier with picosecond pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nanni, Emilio A.; Jawla, Sudheer; Lewis, Samantha M.

Here, we report the amplification of 250 GHz pulses as short as 260 ps without observation of pulse broadening using a photonic-band-gap circuit gyrotron traveling-wave-amplifier. The gyrotron amplifier operates with a device gain of 38 dB and an instantaneous bandwidth of 8 GHz. The operational bandwidth of the amplifier can be tuned over 16 GHz by adjusting the operating voltage of the electron beam and the magnetic field. The amplifier uses a 30 cm long photonic-band-gap interaction circuit to confine the desired TE 03-like operating mode while suppressing lower order modes which can result in undesired oscillations. The circuit gainmore » is >55 dB for a beam voltage of 23 kV and a current of 700 mA. These results demonstrate the wide bandwidths and a high gain achievable with gyrotron amplifiers. The amplification of picosecond pulses of variable lengths, 260–800 ps, shows good agreement with the theory using the coupled dispersion relation and the gain-spectrum of the amplifier as measured with quasi-CW input pulses.« less

Influence of ion transport on discharge propagation of nanosecond dielectric barrier discharge plasma actuator

NASA Astrophysics Data System (ADS)

Hua, Weizhuo; Koji, Fukagata

2017-11-01

A numerical study has been conducted to understand the streamer formation and propagation of nanosecond pulsed surface dielectric barrier discharge of positive polarity. First we compared the result of different grid configuration to investigate the influence of x and y direction grid spacing on the streamer propagation. The streamer propagation is sensitive to y grid spacing especially at the dielectric surface. The streamer propagation velocity can reach 0.2 cm/ns when the voltage magnitude is 12 kV. A narrow gap was found between the streamer and dielectric barrier, where the plasma density is several orders of magnitude smaller than the streamer region. Analyses on the ion transport in the gap and streamer regions show the different ion transport mechanisms in the two different region. In the gap region, the diffusion of electron toward the dielectric layer decreases the seed electron in the beginning of voltage pulse, resulting that ionization avalanche does not occur. The streamer region is not significantly affected by the diffusion flux toward the dielectric layer, so that ionization avalanche takes place and leads to dramatic increase of plasma density.

Photonic-band-gap gyrotron amplifier with picosecond pulses

DOE PAGES

Nanni, Emilio A.; Jawla, Sudheer; Lewis, Samantha M.; ...

2017-12-05

Here, we report the amplification of 250 GHz pulses as short as 260 ps without observation of pulse broadening using a photonic-band-gap circuit gyrotron traveling-wave-amplifier. The gyrotron amplifier operates with a device gain of 38 dB and an instantaneous bandwidth of 8 GHz. The operational bandwidth of the amplifier can be tuned over 16 GHz by adjusting the operating voltage of the electron beam and the magnetic field. The amplifier uses a 30 cm long photonic-band-gap interaction circuit to confine the desired TE 03-like operating mode while suppressing lower order modes which can result in undesired oscillations. The circuit gainmore » is >55 dB for a beam voltage of 23 kV and a current of 700 mA. These results demonstrate the wide bandwidths and a high gain achievable with gyrotron amplifiers. The amplification of picosecond pulses of variable lengths, 260–800 ps, shows good agreement with the theory using the coupled dispersion relation and the gain-spectrum of the amplifier as measured with quasi-CW input pulses.« less

Laser-guided energetic discharges over large air gaps by electric-field enhanced plasma filaments

PubMed Central

Théberge, Francis; Daigle, Jean-François; Kieffer, Jean-Claude; Vidal, François; Châteauneuf , Marc

2017-01-01

Recent works on plasma channels produced during the propagation of ultrashort and intense laser pulses in air demonstrated the guiding of electric discharges along the laser path. However, the short plasma lifetime limits the length of the laser-guided discharge. In this paper, the conductivity and lifetime of long plasma channels produced by ultrashort laser pulses is enhanced efficiently over many orders of magnitude by the electric field of a hybrid AC-DC high-voltage source. The AC electric pulse from a Tesla coil allowed to stimulate and maintain the highly conductive channel during few milliseconds in order to guide a subsequent 500 times more energetic discharge from a 30-kV DC source. This DC discharge was laser-guided over an air gap length of two metres, which is more than two orders of magnitude longer than the expected natural discharge length. Long plasma channel induced by laser pulses and stimulated by an external high-voltage source opens the way for wireless and efficient transportation of energetic current pulses over long air gaps and potentially for guiding lightning. PMID:28053312

Electron emission and beam generation using ferroelectric cathodes

NASA Astrophysics Data System (ADS)

Flechtner, Donald D.

1999-06-01

In 1989, researchers at CERN published the discovery of significant electron emission (1-100 A/cm2) from Lead-Lanthanum-Zirconate- Titanate (PLZT). The publication of these results led to international interest in ferroelectric cathodes studies for use in pulsed power devices. At Cornell University in 1991, experiments with Lead-Zirconate-Titanate (PZT) compositions were begun to study the feasibility of using this ferroelectric material as a cathode in the electron gun section of High Power Traveling Wave Tube Amplifier Experiments. Current-voltage characteristics were documented for diode voltages ranging from 50-500,000 V with anode cathode gaps of.5-6 cm. A linear current-voltage relation was found for voltages less than 50 kV. For diode voltages >=200 kV, a typical Child-Langmuir V3/2 dependence was observed. Additional experiments have demonstrated repetition rates of up to 50 Hz with current densities of >=20 A/cm2. These results have been used in the ongoing design and construction of the electron gun for a 500 kV pulse modulator capable of repetitive operation at 1 Hz. The electron gun uses a PZT 55/45 (Pb(Zr.55,Ti.45 )O3) cathode to produce a <=400 A electron beam focused by a converging magnetic field. Studies of the emission process itself indicate the initial electrons are produced by field emission from the metallic grid applied to the front surface of the cathode. The field emission is induced by the application of a fast rising 1-3 kV, 150 ns pulse to the rear electrode of the 1 mm thick ferroelectric. Field emission can lead to explosive emission from microprotrusions and metal-ferroelectric-vacuum triple points forming a diffuse plasma on the surface of the sample. Under long pulse experiments (1-5 μs), plasma velocities of ~2 cm/μs were measured from gap closure rates. Results from an ion Faraday cup experiment showed ion velocities of 1-2 cm/μs. Experimental evidence indicates the electron emission is dependent on the field emission initiated by the voltage applied to rear surface of the ferroelectric; however, for current pulse durations on the order of microseconds, the surface plasma expansion into the gap can dominate current flow.

Time-resolved magnetic spectrometer measurements of the SABRE positive polarity magnetically insulated transmission line voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Menge, P.R.; Cuneo, M.E.; Hanson, D.L.

A magnetic spectrometer has been fielded on the coaxial magnetically insulated transmission line (MITL) of the SABRE ten-cavity inductive voltage adder operated in positive polarity (6 MV, 300 kA, 50 ns). Located 1 m upstream from an extraction ion diode, this diagnostic is capable of measuring the SABRE voltage pulse with a 2 ns resolution. Ions (protons and carbon) from either a flashover or plasma gun source are accelerated from the inner anode across the gap to the outer cathode and into a drift tube terminated by the magnetic spectrometer. The magnetically deflected ions are recorded on up to sixteenmore » PIN diodes (diameter = 1 mm, thickness = 35 {mu}). The voltage waveform is produced from the time-of-flight information. Results confirm previous observations of a vacuum wave precursor separated from the magnetically insulated wave. Verification of upstream precursor erosion techniques are possible with this instrument. Measurements of peak voltage show good agreement with other time-integrated voltage diagnostics. Comparisons with theoretical voltage predictions derived from a flow impedance model of MITL behavior will be presented.« less

A mixed acid based vanadium-cerium redox flow battery with a zero-gap serpentine architecture

NASA Astrophysics Data System (ADS)

Leung, P. K.; Mohamed, M. R.; Shah, A. A.; Xu, Q.; Conde-Duran, M. B.

2015-01-01

This paper presents the performance of a vanadium-cerium redox flow battery using conventional and zero-gap serpentine architectures. Mixed-acid solutions based on methanesulfonate-sulfate anions (molar ratio 3:1) are used to enhance the solubilities of the vanadium (>2.0 mol dm-3) and cerium species (>0.8 mol dm-3), thus achieving an energy density (c.a. 28 Wh dm-3) comparable to that of conventional all-vanadium redox flow batteries (20-30 Wh dm-3). Electrochemical studies, including cyclic voltammetry and galvanostatic cycling, show that both vanadium and cerium active species are suitable for energy storage applications in these electrolytes. To take advantage of the high open-circuit voltage (1.78 V), improved mass transport and reduced internal resistance are facilitated by the use of zero-gap flow field architecture, which yields a power density output of the battery of up to 370 mW cm-2 at a state-of-charge of 50%. In a charge-discharge cycle at 200 mA cm-2, the vanadium-cerium redox flow battery with the zero-gap architecture is observed to discharge at a cell voltage of c.a. 1.35 V with a coulombic efficiency of up to 78%.

Electrothermally Driven Fluorescence Switching by Liquid Crystal Elastomers Based On Dimensional Photonic Crystals.

PubMed

Lin, Changxu; Jiang, Yin; Tao, Cheng-An; Yin, Xianpeng; Lan, Yue; Wang, Chen; Wang, Shiqiang; Liu, Xiangyang; Li, Guangtao

2017-04-05

In this article, the fabrication of an active organic-inorganic one-dimensional photonic crystal structure to offer electrothermal fluorescence switching is described. The film is obtained by spin-coating of liquid crystal elastomers (LCEs) and TiO 2 nanoparticles alternatively. By utilizing the property of LCEs that can change their size and shape reversibly under external thermal stimulations, the λ max of the photonic band gap of these films is tuned by voltage through electrothermal conversion. The shifted photonic band gap further changes the matching degree between the photonic band gap of the film and the emission spectrum of organic dye mounting on the film. With rhodamine B as an example, the enhancement factor of its fluorescence emission is controlled by varying the matching degree. Thus, the fluorescence intensity is actively switched by voltage applied on the system, in a fast, adjustable, and reversible manner. The control chain of using the electrothermal stimulus to adjust fluorescence intensity via controlling the photonic band gap is proved by a scanning electron microscope (SEM) and UV-vis reflectance. This mechanism also corresponded to the results from the finite-difference time-domain (FDTD) simulation. The comprehensive usage of photonic crystals and liquid crystal elastomers opened a new possibility for active optical devices.

Research on electrodischarge drilling of polycrystalline diamond with increased gap voltage

NASA Astrophysics Data System (ADS)

Skoczypiec, Sebastian; Bizoń, Wojciech; Żyra, Agnieszka

2018-05-01

This paper presents an experimental investigation of the machining characteristics of polycrystalline diamond (PCD). Machining of PCD by conventional technologies is not an effective solution. Due to presence of cobalt this material can be machined by application of electrical discharges. On the other side, electrical conductivity of PCD is on the limit of electrodischarge machining (EDM) possibilities. Proposed paper reports experimental investigation on electrodischarge drilling of PCD samples. The test were carried out with application on of high-voltage (up to 550 V) pulse power unit for two kinds of dielectrics: carbon based (Exxsol D80) and de-ionized water. As output parameters machining accuracy (side gap), material removal rate were selected. Also, based on SEM photographs and energy dispersive X-ray spectroscopy (EDS) analysis, a qualitative evaluation of the obtained results was presented.

Ultrashort-Pulse Child-Langmuir Law in the Quantum and Relativistic Regimes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ang, L. K.; Zhang, P.

This Letter presents a consistent quantum and relativistic model of short-pulse Child-Langmuir (CL) law, of which the pulse length {tau} is less than the electron transit time in a gap of spacing D and voltage V. The classical value of the short-pulse CL law is enhanced by a large factor due to quantum effects when the pulse length and the size of the beam are, respectively, in femtosecond duration and nanometer scale. At high voltage larger than the electron rest mass, relativistic effects will suppress the enhancement of short-pulse CL law, which is confirmed by particle-in-cell simulation. When the pulsemore » length is much shorter than the gap transit time, the current density is proportional to V, and to the inverse power of D and {tau}.« less

Observing the Heterogeneous Electro-redox of Individual Single-Layer Graphene Sheets.

PubMed

Chen, Tao; Zhang, Yuwei; Xu, Weilin

2016-09-27

Electro-redox-induced heterogeneous fluorescence of an individual single-layer graphene sheet was observed in real time by a total internal reflection fluorescence microscope. It was found that the fluorescence intensity of an individual sheet can be tuned reversibly by applying periodic voltages to control the redox degree of graphene sheets. Accordingly, the oxidation and reduction kinetics of an individual single-layer graphene sheet was studied at different voltages. The electro-redox-induced reversible variation of fluorescence intensity of individual sheets indicates a reversible band gap tuning strategy. Furthermore, correlation analysis of redox rate constants on individual graphene sheets revealed a redox-induced spatiotemporal heterogeneity or dynamics of graphene sheets. The observed controllable redox kinetics can rationally guide the precise band gap tuning of individual graphene sheets and then help their extensive applications in optoelectronics and devices for renewable energy.

Driving CZTS to the SQ Limit: Solving the Open Circuit Voltage Problem

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haight, Richard A.; McCandless, Brian E.; Kummel, Andrew C.

2016-12-15

A key objective of this 3 year research effort was to reduce the open circuit voltage (Voc) deficit, defined as the difference between the absorber band gap and the measured Voc to below 475mV from values at the beginning of this work of 630-730mV. To achieve this reduction, along with the attendant goals of higher Voc and efficiency, detailed studies into the fundamental understanding of existing limitations were undertaken.

Breakdown phenomena in radio-frequency helium microdischarges

NASA Astrophysics Data System (ADS)

Radmilovic-Radjenovic, M.; Radjenovic, B.; Nina, A.

2008-07-01

In this paper, the Kihara equation has been applied in order to determine the breakdown voltage in helium rf microdischarges. It was found that the Kihara equation, with modified moleculer constants, describes the breakdown process well even for gaps of the order of a few millimeters. A good agreement between numerical solutions of the Kihara equation and the available experimental data reveals that the breakdown voltages depend on the pd product and vary substantially with changes in rf frequencies.

Reversible Negative Resistive Switching in an Individual Fe@Al2O3 Hybrid Nanotube for Nonvolatile Memory.

PubMed

Ye, Yalong; Zhao, Jie; Xiao, Li; Cheng, Baochang; Xiao, Yanhe; Lei, Shuijin

2018-06-06

Hybrid nanostructures can show enormous potential in different areas because of their unique structural configurations. Herein, Fe@Al 2 O 3 hybrid nanotubes are constructed via a homogeneous coprecipitation method followed by subsequent annealing in a reducing atmosphere. The introduction of zero band gap Fe nanocrystals in the wall of ultrawide band gap Al 2 O 3 insulator nanotubes results in the formation of charge trap centers, and correspondingly a single hybrid nanotube-based two-terminal device can show reversible negative resistive switching (RS) characteristics with symmetrical negative differential resistance (NDR) at relatively high operation bias voltages. At a large bias voltage, holes and electrons can be injected into traps at two ends from electrodes, respectively, and then captured. The bias voltage dependence of asymmetrical filling of charges can lead to a reversible variation of built-in electromotive force, and therefore the symmetrical negative RS with NDR arises from two reversible back-to-back series bipolar RS. At a low readout voltage, the single Fe@Al 2 O 3 hybrid nanotube can show an excellent nonvolatile memory feature with a relatively large switching ratio of ∼30. The bias-governed reversible negative RS with superior stability, reversibility, nondestructive readout, and remarkable cycle performance makes it a potential candidate in next-generation erasable nonvolatile resistive random access memories.

Coiled transmission line pulse generators

DOEpatents

McDonald, Kenneth Fox

2010-11-09

Methods and apparatus are provided for fabricating and constructing solid dielectric "Coiled Transmission Line" pulse generators in radial or axial coiled geometries. The pour and cure fabrication process enables a wide variety of geometries and form factors. The volume between the conductors is filled with liquid blends of monomers, polymers, oligomers, and/or cross-linkers and dielectric powders; and then cured to form high field strength and high dielectric constant solid dielectric transmission lines that intrinsically produce ideal rectangular high voltage pulses when charged and switched into matched impedance loads. Voltage levels may be increased by Marx and/or Blumlein principles incorporating spark gap or, preferentially, solid state switches (such as optically triggered thyristors) which produce reliable, high repetition rate operation. Moreover, these Marxed pulse generators can be DC charged and do not require additional pulse forming circuitry, pulse forming lines, transformers, or an a high voltage spark gap output switch. The apparatus accommodates a wide range of voltages, impedances, pulse durations, pulse repetition rates, and duty cycles. The resulting mobile or flight platform friendly cylindrical geometric configuration is much more compact, light-weight, and robust than conventional linear geometries, or pulse generators constructed from conventional components. Installing additional circuitry may accommodate optional pulse shape improvements. The Coiled Transmission Lines can also be connected in parallel to decrease the impedance, or in series to increase the pulse length.

Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Matys, M.; Kaneki, S.; Nishiguchi, K.; Adamowicz, B.; Hashizume, T.

2017-12-01

We proposed that the disorder induced gap states (DIGS) can be responsible for the threshold voltage (Vth) instability in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors. In order to verify this hypothesis, we performed the theoretical calculations of the capacitance voltage (C-V) curves for the Al2O3/AlGaN/GaN structures using the DIGS model and compared them with measured ones. We found that the experimental C-V curves with a complex hysteresis behavior varied with the maximum forward bias and the sweeping rate can be well reproduced theoretically by assuming a particular distribution in energy and space of the DIGS continuum near the Al2O3/AlGaN interface, i.e., a U-shaped energy density distribution and exponential depth decay from the interface into Al2O3 layer (up to 4 nm), as well as suitable DIGS capture cross sections (the order of magnitude of 10-15 cm2). Finally, we showed that the DIGS model can also explain the negative bias induced threshold voltage instability. We believe that these results should be critical for the successful development of the passivation techniques, which allows to minimize the Vth instability related effects.

The simplest equivalent circuit of a pulsed dielectric barrier discharge and the determination of the gas gap charge transfer

NASA Astrophysics Data System (ADS)

Pipa, A. V.; Koskulics, J.; Brandenburg, R.; Hoder, T.

2012-11-01

The concept of the simplest equivalent circuit for a dielectric barrier discharge (DBD) is critically reviewed. It is shown that the approach is consistent with experimental data measured either in large-scale sinusoidal-voltage driven or miniature pulse-voltage driven DBDs. An expression for the charge transferred through the gas gap q(t) is obtained with an accurate account for the displacement current and the values of DBD reactor capacitance. This enables (i) the significant reduction of experimental error in the determination of q(t) in pulsed DBDs, (ii) the verification of the classical electrical theory of ozonizers about maximal transferred charge qmax, and (iii) the development of a graphical method for the determination of qmax from charge-voltage characteristics (Q-V plots, often referred as Lissajous figures) measured under pulsed excitation. The method of graphical presentation of qmax is demonstrated with an example of a Q-V plot measured under pulsed excitation. The relations between the discharge current jR(t), the transferred charge q(t), and the measurable parameters are presented in new forms, which enable the qualitative interpretation of the measured current and voltage waveforms without the knowledge about the value of the dielectric barrier capacitance Cd. Whereas for quantitative evaluation of electrical measurements, the accurate estimation of the Cd is important.

The structure of the lipid-embedded potassium channel voltage sensor determined by double-electron–electron resonance spectroscopy

PubMed Central

Vamvouka, Magdalini; Cieslak, John; Van Eps, Ned; Hubbell, Wayne; Gross, Adrian

2008-01-01

A four-pulse electron paramagnetic resonance experiment was used to measure long-range inter-subunit distances in reconstituted KvAP, a voltage-dependent potassium (Kv) channel. The measurements have allowed us to reach the following five conclusions about the native structure of the voltage sensor of KvAP. First, the S1 helix of the voltage sensor engages in a helix packing interaction with the pore domain. Second, the crystallographically observed antiparallel helix-turn-helix motif of the voltage-sensing paddle is retained in the membrane-embedded voltage sensor. Third, the paddle is oriented in such a way as to expose one face to the pore domain and the opposite face to the membrane. Fourth, the paddle and the pore domain appear to be separated by a gap that is sufficiently wide for lipids to penetrate between the two domains. Fifth, the critical voltage-sensing arginine residues on the paddle appear to be lipid exposed. These results demonstrate the importance of the membrane for the native structure of Kv channels, suggest that lipids are an integral part of their native structure, and place the voltage-sensing machinery into a complex lipid environment near the pore domain. PMID:18287283

Review of light-ion driver development for inertial fusion energy

NASA Astrophysics Data System (ADS)

Bluhm, H.; Hoppé, P.

2001-05-01

The concept of a light ion beam driver for Inertial Fusion Energy (IFE) is based on multi-terawatt, multi-megavolt pulsed power generators, two-stage ion acceleration and charge neutralised transport. In this paper we discuss the present status for each of these components and identify the main issues for research. Only modest extrapolations from presently available technologies seem necessary for the high voltage pulse generator. The greatest challenge of this approach is the accelerator, which will consist of two stages, the injector and the post-accelerator. Large progress has been made in understanding the physical phenomena occurring in the injector gap. This progress has become possible by new sophisticated diagnostics that allowed detailed temporally and spatially resolved measurements of field and particle densities in the acceleration gap and by relativistic fully electromagnetic PIC-simulation tools, that stimulated analytic models. The conclusions drawn from these studies, namely limiting the ion current density to small enhancements to reduce the beam divergence need still to be verified experimentally. Systematic experimental research on post-acceleration at high power and voltage must aim at a complete understanding of instabilities coupling from the injector to the post-accelerator and at limiting voltages and barriers for the extraction of unwanted ions from plasmas at the injection side. Ultimately the light ion approach requires rep-rateable large area ion sources with ion masses greater than 1 and particle energies around 30 MeV. Although different cleaning protocols were able to reduce the amount of parasitic ions in the Li beam from a LiF field emission source the achievements are still insufficient. A field of common interest between light and heavy ion beam driven fusion is beam transport from the accelerator to the target. Supposedly the most favourable concept for both approaches is self-pinched transport. Experimental evidence for self-pinched transport has recently been achieved in an experiment at NRL. Further experiments are needed to determine the dynamics and magnitude of net current formation, the efficiency of transport and the effect of bunching.

GaAs quantum dots in a GaP nanowire photodetector

NASA Astrophysics Data System (ADS)

Kuyanov, P.; McNamee, S. A.; LaPierre, R. R.

2018-03-01

We report the structural, optical and electrical properties of GaAs quantum dots (QDs) embedded along GaP nanowires. The GaP nanowires contained p-i-n junctions with 15 consecutively grown GaAs QDs within the intrinsic region. The nanowires were grown by molecular beam epitaxy using the self-assisted vapor-liquid-solid process. The crystal structure of the NWs alternated between twinned ZB and WZ as the composition along the NW alternated between the GaP barriers and the GaAs QDs, respectively, leading to a polytypic structure with a periodic modulation of the NW sidewall facets. Photodetector devices containing QDs showed absorption beyond the bandgap of GaP in comparison to nanowires without QDs. Voltage-dependent measurements suggested a field emission process of carriers from the QDs.

Measurement of Single Channel Currents from Cardiac Gap Junctions

NASA Astrophysics Data System (ADS)

Veenstra, Richard D.; Dehaan, Robert L.

1986-08-01

Cardiac gap junctions consist of arrays of integral membrane proteins joined across the intercellular cleft at points of cell-to-cell contact. These junctional proteins are thought to form pores through which ions can diffuse from cytosol to cytosol. By monitoring whole-cell currents in pairs of embryonic heart cells with two independent patch-clamp circuits, the properties of single gap junction channels have been investigated. These channels had a conductance of about 165 picosiemens and underwent spontaneous openings and closings that were independent of voltage. Channel activity and macroscopic junctional conductance were both decreased by the uncoupling agent 1-octanol.

Effect of voltage waveform on dielectric barrier discharge ozone production efficiency

NASA Astrophysics Data System (ADS)

Mericam-Bourdet, N.; Kirkpatrick, M. J.; Tuvache, F.; Frochot, D.; Odic, E.

2012-03-01

Dielectric barrier discharges (DBDs) are commonly used for gas effluent cleanup and ozone generation. For these applications, the energy efficiency of the discharge is a major concern. This paper reports on investigations carried out on the voltage shape applied to DBD reactor electrodes, aiming to evaluate a possible energy efficiency improvement for ozone production. Two DBD reactor geometries were used: pin-to-pin and cylinder-to-cylinder, both driven either by a bi-directional power supply (voltage rise rate 1 kV/μs) or by a pulsed power supply (voltage rise rate 1 kV/ns). Ozone formed in dry air was measured at the reactor outlet. Special attention was paid to discharge input power evaluation using different methods including instantaneous current-voltage product and transferred charge-applied voltage figures. The charge transferred by the discharges was also correlated to the ozone production. It is shown that, in the case of the DBD reactors under investigation, the applied voltage shape has no influence on the ozone production efficiency. For the considered voltage rise rate, the charge deposit on the dielectric inserted inside the discharge gap is the important factor (as opposed to the voltage shape) governing the efficiency of the discharge - it does this by tailoring the duration of the current peak into the tens of nanosecond range.

Relativistic Magnetron Priming Experiments and Theory

DTIC Science & Technology

2010-03-29

rest mass and charge of an electron, respectively, c is the speed of light, and V is the voltage drop across the anode-cathode gap. D is the effective ...and Verboncoeur1 as an effect generated by a multipactor model that also requires a seed electron to initiate the process. The existence of a seed...Discovery of unexpected effects of ions in magnetically insulated crossed-field gap. 2) Buneman-Hartree condition was critically re-examined in a

Towards colorless transparent organic transistors: potential of benzothieno[3,2-b]benzothiophene-based wide-gap semiconductors.

PubMed

Moon, Hanul; Cho, Hyunsu; Kim, Mincheol; Takimiya, Kazuo; Yoo, Seunghyup

2014-05-21

Colorless, highly transparent organic thin-film transistors (TOTFTs) with high performance are realized based on benzothieno[3,2-b]benzothiophene (BTBT) derivatives that simultaneously exhibit a wide energy gap and high transport properties. Multilayer transparent source/drain electrodes maintain the transparency, and ultrathin fluoropolymer dielectric layers enable stable, low-voltage operation of the proposed TOTFTs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

CDTE alloys and their application for increasing solar cell performance

NASA Astrophysics Data System (ADS)

Swanson, Drew E.

Cadmium Telluride (CdTe) thin film solar is the largest manufactured solar cell technology in the United States and is responsible for one of the lowest costs of utility scale solar electricity at a purchase agreement of $0.0387/kWh. However, this cost could be further reduced by increasing the cell efficiency. To bridge the gap between the high efficiency technology and low cost manufacturing, a research and development tool and process was built and tested. This fully automated single vacuum PV manufacturing tool utilizes multiple inline close space sublimation (CSS) sources with automated substrate control. This maintains the proven scalability of the CSS technology and CSS source design but with the added versatility of independent substrate motion. This combination of a scalable deposition technology with increased cell fabrication flexibility has allowed for high efficiency cells to be manufactured and studied. The record efficiency of CdTe solar cells is lower than fundamental limitations due to a significant deficit in voltage. It has been modeled that there are two potential methods of decreasing this voltage deficiency. The first method is the incorporation of a high band gap film at the back contact to induce a conduction-band barrier that can reduce recombination by reflecting electrons from the back surface. The addition of a Cd1-x MgxTe (CMT) layer at the back of a CdTe solar cell should induce this desired offset and reflect both photoelectrons and forward-current electrons away from the rear surface. Higher collection of photoelectrons will increase the cells current and the reduction of forward current will increase the cells voltage. To have the optimal effect, CdTe must have reasonable carrier lifetimes and be fully depleted. To achieve this experimentally, CdTe layers have been grown sufficiently thin to help produce a fully depleted cell. A variety of measurements including performance curves, transmission electron microscopy, x-ray photoelectron spectroscopy, and energy-dispersive x-ray spectroscopy were performed to characterize these cells. Voltage improvements on the order of 50 mV are presented at a thin (1 ?m) CdTe absorber condition. However an overall reduction in fill factor (FF) is seen, with a strong reduction in FF as the magnesium incorporation is increased. Detailed material characterization shows the formation of oxides at the back of CdMgTe during the passivation process. A CdTe capping layer is added to reduce oxidation and help maintain the uniformity of the CdMgTe layer. A tellurium back contact is also added in place of a carbon paint back contact, reducing the impact of the valance band offset (VBO) from the CMT. With the addition of the capping layer and tellurium back contact a consistent 50 mV increase is seen with improved FF. However this voltage increase is well below modeled Voc increases of 150 mV. CMT double hetero-structures are manufactured and analyzed to estimate the interface recombination at the CdTe/CMT interface. The CdTe/CMT interface is approximated at 2*105 cm s-1 and modeling is referenced predicting significant reduction in performance based on this interface quality. To improve interface quality by removing the need for a vacuum break, the deposition hardware is incorporated into the primary deposition system. Second, CdTe has a somewhat higher band gap than optimal for single-junction terrestrial solar-cell power generation. A reduction in the band gap could therefore result in an overall improvement in performance. To reduce the band gap, selenium was alloyed with CdTe using a novel co-sublimation extension of the close-space-sublimation process. Co-sublimated layers of CdSeTe with various selenium concentrations were characterized for optical absorption and atomic concentrations, as well as to track changes in their morphology and crystallinity. The lower band-gap CdSeTe films were then incorporated into the front of CdTe cells. This two-layer band-gap structure demonstrated higher current collection and increased quantum efficiency at longer wavelengths. Material characterization shows the diffusion of selenium through the CdTe during passivation resulting in improved in lifetime and a reduced voltage deficit at lower band gaps.

An experimental study on the thermal characteristics and heating effect of arc-fault from Cu core in residential electrical wiring fires

PubMed Central

Du, Jian-Hua; Zeng, Yi; Pan, Leng; Zhang, Ren-Cheng

2017-01-01

The characteristics of a series direct current (DC) arc-fault including both electrical and thermal parameters were investigated based on an arc-fault simulator to provide references for multi-parameter electrical fire detection method. Tests on arc fault behavior with three different initial circuit voltages, resistances and arc gaps were conducted, respectively. The influences of circuit conditions on arc dynamic image, voltage, current or power were interpreted. Also, the temperature rises of electrode surface and ambient air were studied. The results showed that, first, significant variations of arc structure and light emitting were observed under different conditions. A thin outer burning layer of vapor generated from electrodes with orange light was found due to the extremely high arc temperature. Second, with the increasing electrode gap in discharging, the arc power was shown to have a non monotonic relationship with arc length for constant initial circuit voltage and resistance. Finally, the temperature rises of electrode surface caused by heat transfer from arc were found to be not sensitive with increasing arc length due to special heat transfer mechanism. In addition, temperature of ambient air showed a large gradient in radial direction of arc. PMID:28797055

An experimental study on the thermal characteristics and heating effect of arc-fault from Cu core in residential electrical wiring fires.

PubMed

Du, Jian-Hua; Tu, Ran; Zeng, Yi; Pan, Leng; Zhang, Ren-Cheng

2017-01-01

The characteristics of a series direct current (DC) arc-fault including both electrical and thermal parameters were investigated based on an arc-fault simulator to provide references for multi-parameter electrical fire detection method. Tests on arc fault behavior with three different initial circuit voltages, resistances and arc gaps were conducted, respectively. The influences of circuit conditions on arc dynamic image, voltage, current or power were interpreted. Also, the temperature rises of electrode surface and ambient air were studied. The results showed that, first, significant variations of arc structure and light emitting were observed under different conditions. A thin outer burning layer of vapor generated from electrodes with orange light was found due to the extremely high arc temperature. Second, with the increasing electrode gap in discharging, the arc power was shown to have a non monotonic relationship with arc length for constant initial circuit voltage and resistance. Finally, the temperature rises of electrode surface caused by heat transfer from arc were found to be not sensitive with increasing arc length due to special heat transfer mechanism. In addition, temperature of ambient air showed a large gradient in radial direction of arc.

Pulse-periodic generation of supershort avalanche electron beams and X-ray emission

NASA Astrophysics Data System (ADS)

Baksht, E. Kh.; Burachenko, A. G.; Erofeev, M. V.; Tarasenko, V. F.

2014-05-01

Pulse-periodic generation of supershort avalanche electron beams (SAEBs) and X-ray emission in nitrogen, as well as the transition from a single-pulse mode to a pulse-periodic mode with a high repetition frequency, was studied experimentally. It is shown that, in the pulse-periodic mode, the full width at halfmaximum of the SAEB is larger and the decrease rate of the gap voltage is lower than those in the single-pulse mode. It is found that, when the front duration of the voltage pulse at a nitrogen pressure of 90 Torr decreases from 2.5 to 0.3 ns, the X-ray exposure dose in the pulse-periodic mode increases by more than one order of magnitude and the number of SAEB electrons also increases. It is shown that, in the pulse-periodic mode of a diffuse discharge, gas heating in the discharge gap results in a severalfold increase in the SAEB amplitude (the number of electrons in the beam). At a generator voltage of 25 kV, nitrogen pressure of 90 Torr, and pulse repetition frequency of 3.5 kHz, a runaway electron beam was detected behind the anode foil.

Switches from pi- to sigma-bonding complexes controlled by gate voltages.

PubMed

Matsui, Eriko; Harnack, Oliver; Matsuzawa, Nobuyuki N; Yasuda, Akio

2005-10-01

A conjugated polymer/metal ion/liquid-crystal molecular system was set between source and drain electrodes with a 100 nm gap. When gate voltage (Vg) increases, the current between source and drain electrodes increases. Infrared spectra show this system to be composed of pi and sigma complexes. At Vg = 0, the pi complex dominates the sigma complex, whereas the sigma complex becomes dominant when Vg is switched on. Calculations found that the pi complex has lower conductivity than the sigma complex.

Ion accelerator system mounting design and operating characteristics for a 5 kW 30-cm xenon ion engine

NASA Technical Reports Server (NTRS)

Aston, Graeme; Brophy, John R.

1987-01-01

Results from a series of experiments to determine the effect of accelerator grid mount geometry on the performance of the J-series ion optics assembly are described. Three mounting schemes, two flexible and one rigid, are compared for their relative ion extraction capability over a range of total accelerating voltages. The largest ion beam current, for the maximum total voltage investigated, is shown to occur using one of the flexible grid mounting geometries. However, at lower total voltages and reduced engine input power levels, the original rigid J-series ion optics accelerator grid mounts result in marginally better grid system performance at the same cold interelectrode gap.

Enhanced Andreev reflection in gapped graphene

NASA Astrophysics Data System (ADS)

Majidi, Leyla; Zareyan, Malek

2012-08-01

We theoretically demonstrate unusual features of superconducting proximity effect in gapped graphene that presents a pseudospin symmetry-broken ferromagnet with a net pseudomagnetization. We find that the presence of a band gap makes the Andreev conductance of graphene superconductor/pseudoferromagnet (S/PF) junction to behave similar to that of a graphene ferromagnet-superconductor junction. The energy gap ΔN can enhance the pseudospin inverted Andreev conductance of S/PF junction to reach a limiting maximum value for ΔN≫μ, which depending on the bias voltage can be larger than the value for the corresponding junction with no energy gap. We further demonstrate a damped-oscillatory behavior for the local density of states of the PF region of S/PF junction and a long-range crossed Andreev reflection process in PF/S/PF structure with antiparallel alignment of pseudomagnetizations of PFs, which confirm that, in this respect, the gapped normal graphene behaves like a ferromagnetic graphene.

Post-Treatment-Free Solution-Processed Reduced Phosphomolybdic Acid Containing Molybdenum Oxide Units for Efficient Hole-Injection Layers in Organic Light-Emitting Devices.

PubMed

Ohisa, Satoru; Endo, Kohei; Kasuga, Kosuke; Suzuki, Michinori; Chiba, Takayuki; Pu, Yong-Jin; Kido, Junji

2018-02-19

We report the development of solution-processed reduced phosphomolybdic acid (rPMA) containing molybdenum oxide units for post-treatment-free hole-injection layers (HILs) in organic light-emitting devices (OLEDs). The physical and chemical properties of rPMA, including its structure, solubility in several solvents, film surface roughness, work function, and valence states, were investigated. The formation of gap states just below the Fermi level of rPMA was observed. Without any post-treatment after the formation of rPMA films, OLEDs employing rPMA as an HIL exhibited a very low driving voltage and a high luminous efficiency. The low driving voltage was attributed to the energy level alignment between the gap states formed by reduction and the HOMO level of the hole-transport layer material N,N'-bis(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine.

Plasma-anode electron gun

NASA Astrophysics Data System (ADS)

Santoru, Joseph; Schumacher, Robert W.; Gregoire, Daniel J.

1994-11-01

The plasma-anode electron gun (PAG) is an electron source in which the thermionic cathode is replaced with a cold, secondary-electron-emitting electrode. Electron emission is stimulated by bombarding the cathode with high-energy ions. Ions are injected into the high-voltage gap through a gridded structure from a plasma source (gas pressure less than or equal to 50 mTorr) that is embedded in the anode electrode. The gridded structure serves as both a cathode for the plasma discharge and as an anode for the PAG. The beam current is modulated at near ground potential by modulating the plasma source, eliminating the need for a high-voltage modulator system. During laboratory tests, the PAG has demonstrated square-wave, 17-microsecond-long beam pulses at 100 kV and 10 A, and it has operated stably at 70 kV and 2.5 A for 210 microsecond pulse lengths without gap closure.

Development of Tunneling Spectroscopy Apparatus for Kelvin and Sub-Kelvin Measurements of Superconducting Energy Gaps by Multi-disciplinary students at a Liberal Arts University

NASA Astrophysics Data System (ADS)

Eckhardt, Matt

2014-03-01

Tunneling spectroscopy is an important technique used to measure the superconducting energy gap, a feature that is at the heart of the nature of superconductivity in various materials. In this presentation, we report the progress and results in developing high-resolution tunneling spectroscopy experimental platforms in a helium three cryostat, a 3 Kelvin cryocooler and a helium dip-tester. The experimental team working in a liberal arts university is a multi-disciplinary group consisting of one physics major, chemisty majors and a biology major. Students including non-physics majors learned and implemented current-voltage measurement techniques, vacuum system engineering, built electronic boxes and amplifier circuits from scratch, built custom multi-conductor cables for thermometry and current-voltage measurements, and performed conductance measurements. We report preliminary results. Acknowledgments: We acknowledge support from National Science Foundation Grant # DMR-1206561.

Tunneling calculations for GaAs-Al(x)Ga(1-x)As graded band-gap sawtooth superlattices

NASA Technical Reports Server (NTRS)

Forrest, Kathrine; Meijer, Paul H. E.

1990-01-01

The transmission resonance spectra and tunneling current-voltage characteristics for direct conduction band electrons in sawtooth GaAs-Al(x)Ga(1-x)As superlattices are computed. Only direct-gap interfaces are considered. It is found that sawtooth superlattices exhibit resonant tunneling similar to that in step superlattices, manifested by correlation of peaks and regions of negative differential resistance in the current-voltage curves with transmission resonances. The Stark shift of the resonances of step-barrier superlattices is a linear function of the field, whereas in sawtooth superlattices under strong fields the shift is not a simple function of the field. This follows from the different ways in which the two structures deform under uniform electric fields: the sawtooth deforms into a staircase, at which field strength all barriers to tunneling are eradicated. The step-barrier superlattice always presents some barrier to tunneling, no matter how high the electric field strength.

Sub-Band Gap Turn-On Near-Infrared-to-Visible Up-Conversion Device Enabled by an Organic-Inorganic Hybrid Perovskite Photovoltaic Absorber.

PubMed

Yu, By Hyeonggeun; Cheng, Yuanhang; Li, Menglin; Tsang, Sai-Wing; So, Franky

2018-05-09

Direct integration of an infrared (IR) photodetector with an organic light-emitting diode (OLED) enables low-cost, pixel-free IR imaging. However, the operation voltage of the resulting IR-to-visible up-conversion is large because of the series device architecture. Here, we report a low-voltage near-IR (NIR)-to-visible up-conversion device using formamidinium lead iodide as a NIR absorber integrated with a phosphorescent OLED. Because of the efficient photocarrier injection from the hybrid perovskite layer to the OLED, we observed a sub-band gap turn-on of the OLED under NIR illumination. The device showed a NIR-to-visible up-conversion efficiency of 3% and a luminance on/off ratio of 10 3 at only 5 V. Finally, we demonstrate pixel-free NIR imaging using the up-conversion device.

Gap-junctional channel and hemichannel activity of two recently identified connexin 26 mutants associated with deafness.

PubMed

Dalamon, Viviana; Fiori, Mariana C; Figueroa, Vania A; Oliva, Carolina A; Del Rio, Rodrigo; Gonzalez, Wendy; Canan, Jonathan; Elgoyhen, Ana B; Altenberg, Guillermo A; Retamal, Mauricio A

2016-05-01

Gap-junction channels (GJCs) are formed by head-to-head association of two hemichannels (HCs, connexin hexamers). HCs and GJCs are permeable to ions and hydrophilic molecules of up to Mr ~1 kDa. Hearing impairment of genetic origin is common, and mutations of connexin 26 (Cx26) are its major cause. We recently identified two novel Cx26 mutations in hearing-impaired subjects, L10P and G109V. L10P forms functional GJCs with slightly altered voltage dependence and HCs with decrease ATP/cationic dye selectivity. G109V does not form functional GJCs, but forms functional HCs with enhanced extracellular Ca(2+) sensitivity and subtle alterations in voltage dependence and ATP/cationic dye selectivity. Deafness associated with G109V could result from decreased GJCs activity, whereas deafness associated to L10P may have a more complex mechanism that involves changes in HC permeability.

Methods/Labor Standards Application Program - Phase IV

DTIC Science & Technology

1985-01-01

Engine Platform a. Pressure switch b. Compressor motor c. Voltage regulator d. Open and clean generator exciter and main windings S3 . Main Collector...clean motors b. Slip rings Gantry #3 Annual: S2. Engine Platform a. Pressure switch b. Compressor motor Voltage regulator d. Open and clean generator...Travel Motors Open and clean motorsa. b. Slip rings Gantry #4 S2 . S3. S4 . S5 . Engine Platform a. Pressure switch b. Compressor motor Voltage regulator

Molecular basis of the interaction between gating modifier spider toxins and the voltage sensor of voltage-gated ion channels

NASA Astrophysics Data System (ADS)

Lau, Carus H. Y.; King, Glenn F.; Mobli, Mehdi

2016-09-01

Voltage-sensor domains (VSDs) are modular transmembrane domains of voltage-gated ion channels that respond to changes in membrane potential by undergoing conformational changes that are coupled to gating of the ion-conducting pore. Most spider-venom peptides function as gating modifiers by binding to the VSDs of voltage-gated channels and trapping them in a closed or open state. To understand the molecular basis underlying this mode of action, we used nuclear magnetic resonance to delineate the atomic details of the interaction between the VSD of the voltage-gated potassium channel KvAP and the spider-venom peptide VSTx1. Our data reveal that the toxin interacts with residues in an aqueous cleft formed between the extracellular S1-S2 and S3-S4 loops of the VSD whilst maintaining lipid interactions in the gaps formed between the S1-S4 and S2-S3 helices. The resulting network of interactions increases the energetic barrier to the conformational changes required for channel gating, and we propose that this is the mechanism by which gating modifier toxins inhibit voltage-gated ion channels.

Functional diversity of potassium channel voltage-sensing domains.

PubMed

Islas, León D

2016-01-01

Voltage-gated potassium channels or Kv's are membrane proteins with fundamental physiological roles. They are composed of 2 main functional protein domains, the pore domain, which regulates ion permeation, and the voltage-sensing domain, which is in charge of sensing voltage and undergoing a conformational change that is later transduced into pore opening. The voltage-sensing domain or VSD is a highly conserved structural motif found in all voltage-gated ion channels and can also exist as an independent feature, giving rise to voltage sensitive enzymes and also sustaining proton fluxes in proton-permeable channels. In spite of the structural conservation of VSDs in potassium channels, there are several differences in the details of VSD function found across variants of Kvs. These differences are mainly reflected in variations in the electrostatic energy needed to open different potassium channels. In turn, the differences in detailed VSD functioning among voltage-gated potassium channels might have physiological consequences that have not been explored and which might reflect evolutionary adaptations to the different roles played by Kv channels in cell physiology.

Functional diversity of potassium channel voltage-sensing domains

PubMed Central

Islas, León D.

2016-01-01

Abstract Voltage-gated potassium channels or Kv's are membrane proteins with fundamental physiological roles. They are composed of 2 main functional protein domains, the pore domain, which regulates ion permeation, and the voltage-sensing domain, which is in charge of sensing voltage and undergoing a conformational change that is later transduced into pore opening. The voltage-sensing domain or VSD is a highly conserved structural motif found in all voltage-gated ion channels and can also exist as an independent feature, giving rise to voltage sensitive enzymes and also sustaining proton fluxes in proton-permeable channels. In spite of the structural conservation of VSDs in potassium channels, there are several differences in the details of VSD function found across variants of Kvs. These differences are mainly reflected in variations in the electrostatic energy needed to open different potassium channels. In turn, the differences in detailed VSD functioning among voltage-gated potassium channels might have physiological consequences that have not been explored and which might reflect evolutionary adaptations to the different roles played by Kv channels in cell physiology. PMID:26794852

High-voltage subnanosecond dielectric breakdown

NASA Astrophysics Data System (ADS)

Mankowski, John Jerome

Current interests in ultrawideband radar sources are in the microwave regime, which correspond to voltage pulse risetimes less than a nanosecond. Some new sources, including the Phillips Laboratory Hindenberg series of hydrogen gas switched pulsers use hydrogen at hundreds of atmospheres of pressure in the switch. Unfortunately, the published data of electrical breakdown of gas and liquid media at these time lengths are relatively scarce. A study was conducted on the electrical breakdown properties of liquid and gas dielectrics at subnanosecond and nanoseconds. Two separate voltage sources with pulse risetimes less than 400 ps were developed. Diagnostic probes were designed and tested for their capability of detecting high voltage pulses at these fast risetimes. A thorough investigation into E-field strengths of liquid and gas dielectrics at breakdown times ranging from 0.4 to 5 ns was performed. The voltage polarity dependence on breakdown strength is observed. Streak camera images of streamer formation were taken. The effect of ultraviolet radiation, incident upon the gap, on statistical lag time was determined.

Ultra-compact Marx-type high-voltage generator

DOEpatents

Goerz, David A.; Wilson, Michael J.

2000-01-01

An ultra-compact Marx-type high-voltage generator includes individual high-performance components that are closely coupled and integrated into an extremely compact assembly. In one embodiment, a repetitively-switched, ultra-compact Marx generator includes low-profile, annular-shaped, high-voltage, ceramic capacitors with contoured edges and coplanar extended electrodes used for primary energy storage; low-profile, low-inductance, high-voltage, pressurized gas switches with compact gas envelopes suitably designed to be integrated with the annular capacitors; feed-forward, high-voltage, ceramic capacitors attached across successive switch-capacitor-switch stages to couple the necessary energy forward to sufficiently overvoltage the spark gap of the next in-line switch; optimally shaped electrodes and insulator surfaces to reduce electric field stresses in the weakest regions where dissimilar materials meet, and to spread the fields more evenly throughout the dielectric materials, allowing them to operate closer to their intrinsic breakdown levels; and uses manufacturing and assembly methods to integrate the capacitors and switches into stages that can be arranged into a low-profile Marx generator.

Specific features of a single-pulse sliding discharge in neon near the threshold for spark breakdown

NASA Astrophysics Data System (ADS)

Trusov, K. K.

2017-08-01

Experimental data on the spatial structure of a single-pulse sliding discharge in neon at voltages below, equal to, and above the threshold for spark breakdown are discussed. The experiments were carried at gas pressures of 30 and 100 kPa and different polarities of the discharge voltage. Photographs of the plasma structure in two discharge chambers with different dimensions of the discharge zone and different thicknesses of an alumina dielectric plate on the surface of which the discharge develops are inspected. Common features of the prebreakdown discharge and its specific features depending on the voltage polarity and gas pressure are analyzed. It is shown that, at voltages below the threshold for spark breakdown, a low-current glow discharge with cathode and anode spots develops in the electrode gap. Above the breakdown threshold, regardless of the voltage polarity, spark channels directed from the cathode to the anode develop against the background of a low-current discharge.

MULTIPLE SPARK GAP SWITCH

DOEpatents

Schofield, A.E.

1958-07-22

A multiple spark gap switch of unique construction is described which will permit controlled, simultaneous discharge of several capacitors into a load. The switch construction includes a disc electrode with a plurality of protuberances of generally convex shape on one surface. A firing electrode is insulatingly supponted In each of the electrode protuberances and extends substantially to the apex thereof. Individual electrodes are disposed on an insulating plate parallel with the disc electrode to form a number of spark gaps with the protuberances. These electrodes are each connected to a separate charged capacitor and when a voltage ls applied simultaneously between the trigger electrodes and the dlsc electrode, each spark gap fires to connect its capacitor to the disc electrode and a subsequent load.

Development of an Annular Electron Beam HPM Amplifier

DTIC Science & Technology

1994-09-01

34, Phys.Rev.Lett., 64(19), ppgs 2320-2323, 7 May 1990 9. Lau, Y.Y. and Chernin, D., "A review of the ac space - charge effect in electron-circuit interactions...the Child-Lanamuir, space - charge limiting current in the beam line. This removes the potential of torming a virtual cathode (Ref. 19). The...propagates the electron beam through a single modulating gap, with a specified voltage, frequency, and gap extent. The beam space charge is an input

Parametric design criteria of an updated thermoradiative cell operating at optimal states

NASA Astrophysics Data System (ADS)

Zhang, Xin; Peng, Wanli; Lin, Jian; Chen, Xiaohang; Chen, Jincan

2017-11-01

An updated mode of the thermoradiative cell (TRC) with sub-band gap and non-radiative losses is proposed, which can efficiently harvest moderate-temperature heat energy and convert a part of heat into electricity. It is found that when the TRC is operated between the heat source at 800 K and the environment at 300 K , its maximum power output density and efficiency can attain 1490 W m-2 and 27.2 % , respectively. Moreover, the effects of some key parameters including the band gap and voltage output on the performance of the TRC are discussed. The optimally working regions of the power density, efficiency, band gap, and voltage output are determined. The maximum efficiency and power output density of the TRC operated at different temperatures are calculated and compared with those of thermophotovoltaic cells (TPVCs) and thermionic energy converters (TECs), and consequently, it is revealed that the maximum efficiency of the TRC operated at the moderate-temperature range is much higher than that of the TEC or the TPVC and the maximum power output density of the TRC is larger than that of the TEC but smaller than that of the TPVC. Particularly, the TRC is manufactured more easily than the near-field TPVC possessing a nanoscale vacuum gap. The results obtained will be helpful for engineers to choose the semiconductor materials, design and manufacture TRCs, and control operative conditions.

High Photoluminescence Quantum Yield in Band Gap Tunable Bromide Containing Mixed Halide Perovskites.

PubMed

Sutter-Fella, Carolin M; Li, Yanbo; Amani, Matin; Ager, Joel W; Toma, Francesca M; Yablonovitch, Eli; Sharp, Ian D; Javey, Ali

2016-01-13

Hybrid organic-inorganic halide perovskite based semiconductor materials are attractive for use in a wide range of optoelectronic devices because they combine the advantages of suitable optoelectronic attributes and simultaneously low-cost solution processability. Here, we present a two-step low-pressure vapor-assisted solution process to grow high quality homogeneous CH3NH3PbI3-xBrx perovskite films over the full band gap range of 1.6-2.3 eV. Photoluminescence light-in versus light-out characterization techniques are used to provide new insights into the optoelectronic properties of Br-containing hybrid organic-inorganic perovskites as a function of optical carrier injection by employing pump-powers over a 6 orders of magnitude dynamic range. The internal luminescence quantum yield of wide band gap perovskites reaches impressive values up to 30%. This high quantum yield translates into substantial quasi-Fermi level splitting and high "luminescence or optically implied" open-circuit voltage. Most importantly, both attributes, high internal quantum yield and high optically implied open-circuit voltage, are demonstrated over the entire band gap range (1.6 eV ≤ Eg ≤ 2.3 eV). These results establish the versatility of Br-containing perovskite semiconductors for a variety of applications and especially for the use as high-quality top cell in tandem photovoltaic devices in combination with industry dominant Si bottom cells.

Surface pretreatment of plastics with an atmospheric pressure plasma jet - Influence of generator power and kinematics

NASA Astrophysics Data System (ADS)

Moritzer, E.; Leister, C.

2014-05-01

The industrial use of atmospheric pressure plasmas in the plastics processing industry has increased significantly in recent years. Users of this treatment process have the possibility to influence the target values (e.g. bond strength or surface energy) with the help of kinematic and electrical parameters. Until now, systematic procedures have been used with which the parameters can be adapted to the process or product requirements but only by very time-consuming methods. For this reason, the relationship between influencing values and target values will be examined based on the example of a pretreatment in the bonding process with the help of statistical experimental design. Because of the large number of parameters involved, the analysis is restricted to the kinematic and electrical parameters. In the experimental tests, the following factors are taken as parameters: gap between nozzle and substrate, treatment velocity (kinematic data), voltage and duty cycle (electrical data). The statistical evaluation shows significant relationships between the parameters and surface energy in the case of polypropylene. An increase in the voltage and duty cycle increases the polar proportion of the surface energy, while a larger gap and higher velocity leads to lower energy levels. The bond strength of the overlapping bond is also significantly influenced by the voltage, velocity and gap. The direction of their effects is identical with those of the surface energy. In addition to the kinematic influences of the motion of an atmospheric pressure plasma jet, it is therefore especially important that the parameters for the plasma production are taken into account when designing the pretreatment processes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moritzer, E., E-mail: elmar.moritzer@ktp.upb.de; Leister, C., E-mail: elmar.moritzer@ktp.upb.de

The industrial use of atmospheric pressure plasmas in the plastics processing industry has increased significantly in recent years. Users of this treatment process have the possibility to influence the target values (e.g. bond strength or surface energy) with the help of kinematic and electrical parameters. Until now, systematic procedures have been used with which the parameters can be adapted to the process or product requirements but only by very time-consuming methods. For this reason, the relationship between influencing values and target values will be examined based on the example of a pretreatment in the bonding process with the help ofmore » statistical experimental design. Because of the large number of parameters involved, the analysis is restricted to the kinematic and electrical parameters. In the experimental tests, the following factors are taken as parameters: gap between nozzle and substrate, treatment velocity (kinematic data), voltage and duty cycle (electrical data). The statistical evaluation shows significant relationships between the parameters and surface energy in the case of polypropylene. An increase in the voltage and duty cycle increases the polar proportion of the surface energy, while a larger gap and higher velocity leads to lower energy levels. The bond strength of the overlapping bond is also significantly influenced by the voltage, velocity and gap. The direction of their effects is identical with those of the surface energy. In addition to the kinematic influences of the motion of an atmospheric pressure plasma jet, it is therefore especially important that the parameters for the plasma production are taken into account when designing the pretreatment processes.« less

Method and radial gap machine for high strength undiffused brushless operation

DOEpatents

Hsu, John S.

2006-10-31

A radial gap brushless electric machine (30) having a stator (31) and a rotor (32) and a main air gap (34) also has at least one stationary excitation coil (35a, 36a) separated from the rotor (32) by a secondary air gap (35e, 35f, 36e, 36f) so as to induce a secondary flux in the rotor (32) which controls a resultant flux in the main air gap (34). Permanent magnetic (PM) material (38) is disposed in spaces between the rotor pole portions (39) to inhibit the second flux from leaking from the pole portions (39) prior to reaching the main air gap (34). By selecting the direction of current in the stationary excitation coil (35a, 36a) both flux enhancement and flux weakening are provided for the main air gap (34). A method of non-diffused flux enhancement and flux weakening for a radial gap machine is also disclosed.

Liquid Nitrogen as Fast High Voltage Switching Medium

NASA Astrophysics Data System (ADS)

Dickens, J.; Neuber, A.; Haustein, M.; Krile, J.; Krompholz, H.

2002-12-01

Compact pulsed power systems require new switching technologies. For high voltages, liquid nitrogen seems to be a suitable switching medium, with high hold-off voltage, low dielectric constant, and no need for pressurized systems as in high pressure gas switches. The discharge behavior in liquid nitrogen, such as breakdown voltages, formative times, current rise as function of voltage, recovery, etc. are virtually unknown, however. The phenomenology of breakdown in liquid nitrogen is investigated with high speed (temporal resolution < 1 ns) electrical and optical diagnostics, in a coaxial system with 50-Ohm impedance. Discharge current and voltage are determined with transmission line type current sensors and capacitive voltage dividers. The discharge luminosity is measured with photomultiplier tubes. Preliminary results of self-breakdown investigations (gap 1 mm, breakdown voltage 44 kV, non-boiling supercooled nitrogen) show a fast (2 ns) transition from an unknown current level to several mA, a long-duration (100 ns) phase with constant current superimposed by ns-spikes, and a final fast transition to the impedance limited current during several nanoseconds. The optical measurements will be expanded toward spectroscopy and high speed photography with the aim of clarifying the overall breakdown mechanisms, including electronic initiation, bubble formation, bubble dynamics, and their role in breakdown, for different electrode geometries (different macroscopic field enhancements).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brandt, Riley E.; Mangan, Niall M.; Li, Jian V.

The development of new thin-film photovoltaic (PV) absorbers is often hindered by the search for an optimal heterojunction contact; an unoptimized contact may be mistaken for poor quality of the underlying absorber, making it difficult to assess the reasons for poor performance. Therefore, quantifying the loss in device efficiency and open-circuit voltage (VOC) as a result of the interface is a critical step in evaluating a new material. In the present work, we fabricate thin-film PV devices using cuprous oxide (Cu2O), with several different n-type heterojunction contacts. Their current-voltage characteristics are measured over a range of temperatures and illumination intensitiesmore » (JVTi). We quantify the loss in VOC due to the interface and determine the effective energy gap at the interface. The effective interface gap measured by JVTi matches the gap measured by X-ray photoelectron spectroscopy, albeit with higher energy resolution and an order of magnitude faster. We discuss potential artifacts in JVTi measurements and areas where analytical models are insufficient. Applying JVTi to complete devices, rather than incomplete material stacks, suggests that it can be a quick, accurate method to assess the loss due to unoptimized interface band offsets in thin-film PV devices.« less

Magnetical asymmetry effect in capacitively coupled plasmas: effects of the magnetic field gradient, pressure, and gap length

NASA Astrophysics Data System (ADS)

Yang, Shali; Chang, Lijie; Zhang, Ya; Jiang, Wei

2018-03-01

By applying the asymmetric magnetic field to a discharge, the dc self-bias and asymmetric plasma response can be generated even in a geometrically and electrically symmetric system. This is called magnetical asymmetric effect (MAE), which can be a new method to control the ion energy and flux independently (Yang et al 2017 Plasma Process. Polym. 14 1700087). In the present work, the effects of magnetic field gradient, gas pressure and gap length on MAE are investigated by using a one-dimensional implicit particle-in-cell/Monte Carlo collision simulation. It found that by appropriately increasing the magnetic field gradient and the gap length, the range of the self-bias voltage will be enlarged, which can be used as the effective approach to control the ion bombarding energy at the electrodes since the ion energy is determined by the voltage drop across the sheath. It also found that the ion flux asymmetry will disappear at high pressure when the magnetic field gradient is relative low, due to the frequent electron-neutral collisions can disrupt electron gyromotion and thus the MAE is greatly reduced.

Dynamics of the spatial structure of pulsed discharges in dense gases in point cathode−plane anode gaps and their erosion effect on the plane electrode surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baksht, E. Kh.; Blinova, O. M.; Erofeev, M. V., E-mail: mve@loi.hcei.tsc.ru

2016-09-15

The dynamics of the spatial structure of the plasma of pulsed discharges in air and nitrogen in a nonuniform electric field and their erosion effect on the plane anode surface were studied experimentally. It is established that, at a nanosecond front of the voltage pulse, a diffuse discharge forms in the point cathode–plane anode gap due to the ionization wave propagating from the cathode. As the gap length decreases, the diffuse discharge transforms into a spark. A bright spot on the anode appears during the diffuse discharge, while the spark channel forms in the later discharge stage. The microstructure ofmore » autographs of anode spots and spark channels in discharges with durations of several nanoseconds is revealed. The autographs consist of up to 100 and more microcraters 5–100 μm in diameter. It is shown that, due to the short duration of the voltage pulse, a diffuse discharge can be implemented, several pulses of which do not produce appreciable erosion on the plane anode or the soot coating deposited on it.« less

Gap state charge induced spin-dependent negative differential resistance in tunnel junctions

NASA Astrophysics Data System (ADS)

Jiang, Jun; Zhang, X.-G.; Han, X. F.

2016-04-01

We propose and demonstrate through first-principles calculation a new spin-dependent negative differential resistance (NDR) mechanism in magnetic tunnel junctions (MTJ) with cubic cation disordered crystals (CCDC) AlO x or Mg1-x Al x O as barrier materials. The CCDC is a class of insulators whose band gap can be changed by cation doping. The gap becomes arched in an ultrathin layer due to the space charge formed from metal-induced gap states. With an appropriate combination of an arched gap and a bias voltage, NDR can be produced in either spin channel. This mechanism is applicable to 2D and 3D ultrathin junctions with a sufficiently small band gap that forms a large space charge. It provides a new way of controlling the spin-dependent transport in spintronic devices by an electric field. A generalized Simmons formula for tunneling current through junction with an arched gap is derived to show the general conditions under which ultrathin junctions may exhibit NDR.

Tryptophan Scanning Reveals Dense Packing of Connexin Transmembrane Domains in Gap Junction Channels Composed of Connexin32.

PubMed

Brennan, Matthew J; Karcz, Jennifer; Vaughn, Nicholas R; Woolwine-Cunningham, Yvonne; DePriest, Adam D; Escalona, Yerko; Perez-Acle, Tomas; Skerrett, I Martha

2015-07-10

Tryptophan was substituted for residues in all four transmembrane domains of connexin32. Function was assayed using dual cell two-electrode voltage clamp after expression in Xenopus oocytes. Tryptophan substitution was poorly tolerated in all domains, with the greatest impact in TM1 and TM4. For instance, in TM1, 15 substitutions were made, six abolished coupling and five others significantly reduced function. Only TM2 and TM3 included a distinct helical face that lacked sensitivity to tryptophan substitution. Results were visualized on a comparative model of Cx32 hemichannel. In this model, a region midway through the membrane appears highly sensitive to tryptophan substitution and includes residues Arg-32, Ile-33, Met-34, and Val-35. In the modeled channel, pore-facing regions of TM1 and TM2 were highly sensitive to tryptophan substitution, whereas the lipid-facing regions of TM3 and TM4 were variably tolerant. Residues facing a putative intracellular water pocket (the IC pocket) were also highly sensitive to tryptophan substitution. Although future studies will be required to separate trafficking-defective mutants from those that alter channel function, a subset of interactions important for voltage gating was identified. Interactions important for voltage gating occurred mainly in the mid-region of the channel and focused on TM1. To determine whether results could be extrapolated to other connexins, TM1 of Cx43 was scanned revealing similar but not identical sensitivity to TM1 of Cx32. © 2015 by The American Society for Biochemistry and Molecular Biology, Inc.

Influence of discharge voltage on the sensitivity of the resultant sputtered NiO thin films toward hydrogen gas

NASA Astrophysics Data System (ADS)

Khalaf, Mohammed K.; Mutlak, Rajaa H.; Khudiar, Ausama I.; Hial, Qahtan G.

2017-06-01

Nickel oxide thin films were deposited on glass substrates as the main gas sensor for H2 by the DC sputtering technique at various discharge voltages within the range of 1.8-2.5 kV. Their structural, optical and gas sensing properties were investigated by XRD, AFM, SEM, ultraviolet visible spectroscopy and home-made gas sensing measurement units. A diffraction peak in the direction of NiO (200) was observed for the sputtered films, thereby indicating that these films were polycrystalline in nature. The optical band gap of the films decreased from 3.8 to 3.5 eV when the thickness of the films was increased from 83.5 to 164.4 nm in relation to an increase in the sputtering discharge voltage from 1.8 to 2.5 kV, respectively. The gas sensitivity performance of the NiO films that were formed was studied and the electrical responses of the NiO-based sensors toward different H2 concentrations were also considered. The sensitivity of the gas sensor increased with the working temperature and H2 gas concentration. The thickness of the NiO thin films was also an important parameter in determining the properties of the NiO films as H2 sensors. It was shown in this study that NiO films have the capability to detect H2 concentrations below 3% in wet air, a feature that allows this material to be used directly for the monitoring of the environment.

Magnetically insulated transmission line oscillator

DOEpatents

Bacon, Larry D.; Ballard, William P.; Clark, M. Collins; Marder, Barry M.

1988-01-01

A magnetically insulated transmission line oscillator employs self-generated magnetic fields to generate microwave energy. An anode of the oscillator includes slow-wave structures which are formed of a plurality of thin conductive vanes defining cavities therebetween, and a gap is formed between the anode and a cathode of the oscillator. In response to a pulsed voltage applied to the anode and cathode, self-generated magnetic fields arfe produced in a cross-field orientation with respect to the orientation of the electric field between the anode and the cathode. The cross-field magnetic fields insulate the flow of electrons in the gap and confine the flow of electrons within the gap.

Magnetically insulated transmission line oscillator

DOEpatents

Bacon, L.D.; Ballard, W.P.; Clark, M.C.; Marder, B.M.

1987-05-19

A magnetically insulated transmission line oscillator employs self-generated magnetic fields to generate microwave energy. An anode of the oscillator includes slow-wave structures which are formed of a plurality of thin conductive vanes defining cavities therebetween, and a gap is formed between the anode and a cathode of the oscillator. In response to a pulsed voltage applied to the anode and cathode, self-generated magnetic fields are produced in a cross-field orientation with respect to the orientation of the electric field between the anode and the cathode. The cross-field magnetic fields insulate the flow of electrons in the gap and confine the flow of electrons within the gap. 11 figs.

Recombination in polymer-fullerene bulk heterojunction solar cells

NASA Astrophysics Data System (ADS)

Cowan, Sarah R.; Roy, Anshuman; Heeger, Alan J.

2010-12-01

Recombination of photogenerated charge carriers in polymer bulk heterojunction (BHJ) solar cells reduces the short circuit current (Jsc) and the fill factor (FF). Identifying the mechanism of recombination is, therefore, fundamentally important for increasing the power conversion efficiency. Light intensity and temperature-dependent current-voltage measurements on polymer BHJ cells made from a variety of different semiconducting polymers and fullerenes show that the recombination kinetics are voltage dependent and evolve from first-order recombination at short circuit to bimolecular recombination at open circuit as a result of increasing the voltage-dependent charge carrier density in the cell. The “missing 0.3 V” inferred from comparison of the band gaps of the bulk heterojunction materials and the measured open-circuit voltage at room-temperature results from the temperature dependence of the quasi-Fermi levels in the polymer and fullerene domains—a conclusion based on the fundamental statistics of fermions.

Numerical modelling of the effect of dry air traces in a helium parallel plate dielectric barrier discharge

NASA Astrophysics Data System (ADS)

Lazarou, C.; Belmonte, T.; Chiper, A. S.; Georghiou, G. E.

2016-10-01

A validated numerical model developed for the study of helium barrier discharges in the presence of dry air impurities is presented in this paper. The model was used to numerically investigate the influence of air traces on the evolution of the helium dielectric barrier discharge (DBD). The level of dry air used as impurity was in the range from 0 to 1500 ppm, which corresponds to the most commonly encountered range in atmospheric pressure discharge experiments. The results presented in this study clearly show that the plasma chemistry and consequently the discharge evolution is highly affected by the concentration level of impurities in the mixture. In particular, it was observed that air traces assist the discharge ignition at low concentration levels (~55 ppm), while on the other hand, they increase the burning voltage at higher concentration levels (~1000 ppm). Furthermore, it was found that the discharge symmetry during the voltage cycle highly depends on the concentration of air. For the interpretation of the results, a detailed analysis of the processes that occur in the discharge gap is performed and the main reaction pathways of ion production are described. Thanks to this approach, useful insight into the physics behind the evolution of the discharge is obtained.

Computation of Static Shapes and Voltages for Micromachined Deformable Mirrors with Nonlinear Electrostatic Actuators

NASA Technical Reports Server (NTRS)

Wang, P. K. C.; Hadaegh, F. Y.

1996-01-01

In modeling micromachined deformable mirrors with electrostatic actuators whose gap spacings are of the same order of magnitude as those of the surface deformations, it is necessary to use nonlinear models for the actuators. In this paper, we consider micromachined deformable mirrors modeled by a membrane or plate equation with nonlinear electrostatic actuator characteristics. Numerical methods for computing the mirror deformation due to given actuator voltages and the actuator voltages required for producing the desired deformations at the actuator locations are presented. The application of the proposed methods to circular deformable mirrors whose surfaces are modeled by elastic membranes is discussed in detail. Numerical results are obtained for a typical circular micromachined mirror with electrostatic actuators.

Enabling fast charging – A battery technology gap assessment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmed, Shabbir; Bloom, Ira; Jansen, Andrew N.

The battery technology literature is reviewed, with an emphasis on key elements that limit extreme fast charging. Key gaps in existing elements of the technology are presented as well as developmental needs. Among these needs are advanced models and methods to detect and prevent lithium plating; new positive-electrode materials which are less prone to stress-induced failure; better electrode designs to accommodate very rapid diffusion in and out of the electrode; and thermal management and pack designs to accommodate the higher operating voltage.

Enabling fast charging – A battery technology gap assessment

DOE PAGES

Ahmed, Shabbir; Bloom, Ira; Jansen, Andrew N.; ...

2017-10-23

The battery technology literature is reviewed, with an emphasis on key elements that limit extreme fast charging. Key gaps in existing elements of the technology are presented as well as developmental needs. Among these needs are advanced models and methods to detect and prevent lithium plating; new positive-electrode materials which are less prone to stress-induced failure; better electrode designs to accommodate very rapid diffusion in and out of the electrode; and thermal management and pack designs to accommodate the higher operating voltage.

Note: Voltage and intensity dependence of the saturation curves of free-air ionization chambers irradiated with chopped synchrotron radiation beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nariyama, Nobuteru

2012-01-15

Current saturation characteristics of free-air ionization chambers with electrode gaps of 4.2 and 8.4 mm were investigated using pulsed photon beam obtained by periodically interrupting synchrotron radiation beams with a chopper. Pulsed photon beams of 10 and 15 keV with pulse duration of 2.5 {mu}s and a frequency of 230 Hz were produced by chopping the beam. The measured recombination rate was found to be proportional to the intensity and inversely proportional to the applied voltage.

Increasing conversion efficiency of two-step photon up-conversion solar cell with a voltage booster hetero-interface.

PubMed

Asahi, Shigeo; Kusaki, Kazuki; Harada, Yukihiro; Kita, Takashi

2018-01-17

Development of high-efficiency solar cells is one of the attractive challenges in renewable energy technologies. Photon up-conversion can reduce the transmission loss and is one of the promising concepts which improve conversion efficiency. Here we present an analysis of the conversion efficiency, which can be increased by up-conversion in a single-junction solar cell with a hetero-interface that boosts the output voltage. We confirm that an increase in the quasi-Fermi gap and substantial photocurrent generation result in a high conversion efficiency.

Voltage THD Improvement for an Outer Rotor Permanent Magnet Synchronous Machine

NASA Astrophysics Data System (ADS)

de la Cruz, Javier; Ramirez, Juan M.; Leyva, Luis

2013-08-01

This article deals with the design of an outer rotor Permanent Magnet Synchronous Machines (PMSM) driven by wind turbines. The Voltage Total Harmonic Distortion (VTHD) is especially addressed, under design parameters' handling, i.e., the geometry of the stator, the polar arc percentage, the air gap, the skew angle in rotor poles, the pole length and the core steel class. Seventy-six cases are simulated and the results provide information useful for designing this kind of machines. The study is conducted on a 5 kW PMSM.

On-line wall-free cell for laser-induced fluorescence detection in capillary electrophoresis.

PubMed

Yu, Chang-Zhu; He, You-Zhao; Xie, Hai-Yang; Gao, Yong; Gan, Wu-Er; Li, Jun

2009-05-15

A wall-free detection method based on liquid junction in a capillary gap was proposed for laser-induced fluorescence (LIF) of capillary electrophoresis (CE). The capillary gap of the wall-free cell was fabricated by etching a 10-mm x 50-microm I.D. fused-silica capillary to obtain a polyimide coating sleeve, decoating about 6mm at one end of both 50 microm I.D. separation and liquid junction capillary, inserting the treated capillary ends into the coating sleeve oppositely, fixing the capillaries with a gap distance of 140 microm by epoxy glue and removing the coating sleeve by burning. The theoretical model, experimental results and wall-free cell images indicated that the gap distance and applied voltage were main influence factors on the wall-free detection. Since the wall-free cell increased the absorption light path and avoided the stray light from the capillary wall, it improved the ratio of signal to noise and limit of detection (LOD) of CE-LIF. Three flavin compounds of riboflavin (RF), flavin mononucleotide sodium (FMN) and flavin adenine dinucleotide disodium (FAD) were used to evaluate the wall-free detection method. Compared with on-column cell, the LODs of the wall-free cell were improved 15-, 6- and 9-fold for RF, FMN and FAD, respectively. The linear calibration concentrations of the flavins ranged from 0.005 to 5.0 micromol/L. The column efficiency was in the range from 1.0 x 10(5) to 2.5 x 10(5) plates. The wall-free detection of CE-LIF was applied to the analysis of the flavins in spinach and lettuce leaves.

Broad-beam high-current dc ion source based on a two-stage glow discharge plasma.

PubMed

Vizir, A V; Oks, E M; Yushkov, G Yu

2010-02-01

We have designed, made, and demonstrated a broad-beam, dc, ion source based on a two-stage, hollow-cathode, and glow discharges plasma. The first-stage discharge (auxiliary discharge) produces electrons that are injected into the cathode cavity of a second-stage discharge (main discharge). The electron injection causes a decrease in the required operating pressure of the main discharge down to 0.05 mTorr and a decrease in required operating voltage down to about 50 V. The decrease in operating voltage of the main discharge leads to a decrease in the fraction of impurity ions in the ion beam extracted from the main gas discharge plasma to less than 0.2%. Another feature of the source is a single-grid accelerating system in which the ion accelerating voltage is applied between the plasma itself and the grid electrode. The source has produced steady-state Ar, O, and N ion beams of about 14 cm diameter and current of more than 2 A at an accelerating voltage of up to 2 kV.

Scaling laws for gas breakdown for nanoscale to microscale gaps at atmospheric pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Loveless, Amanda M.; Garner, Allen L., E-mail: algarner@purdue.edu

2016-06-06

Electronics miniaturization motivates gas breakdown predictions for microscale and smaller gaps, since traditional breakdown theory fails when gap size, d, is smaller than ∼15 μm at atmospheric pressure, p{sub atm}. We perform a matched asymptotic analysis to derive analytic expressions for breakdown voltage, V{sub b}, at p{sub atm} for 1 nm ≤ d ≤ 35 μm. We obtain excellent agreement between numerical, analytic, and particle-in-cell simulations for argon, and show V{sub b} decreasing as d → 0, instead of increasing as predicted by Paschen's law. This work provides an analytic framework for determining V{sub b} at atmospheric pressure for various gap distances that may be extended tomore » other gases.« less

High-Voltage Breakdown Penalties for the Beam-Breakup Instability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ekdahl, Carl August

2016-11-22

The strength of the dangerous beam breakup (BBU) instability in linear induction accelerators (LIAs) is determined by the transverse coupling impedance Z ⊥ of the induction cell cavity. For accelerating gap width w less than the beam pipe radius b, the transverse impedance is theoretically proportional to w/b, favoring narrow gaps to suppress BBU. On the other hand, cells with narrow gaps cannot support high accelerating gradients, because of electrical breakdown and shorting of the gap. Thus, there is an engineering trade-off between BBU growth and accelerating gradient, which must be considered for next generation LIAs now being designed. Inmore » this article this tradeoff is explored, using a simple pillbox cavity as an illustrative example. For this model, widening the gap to reduce the probability of breakdown increases BBU growth, unless higher magnetic focusing fields are used to further suppress the instability.« less

Ab-initio study of structural, electronic, and transport properties of zigzag GaP nanotubes.

PubMed

Srivastava, Anurag; Jain, Sumit Kumar; Khare, Purnima Swarup

2014-03-01

Stability and electronic properties of zigzag (3 ≤ n ≤ 16) gallium phosphide nanotubes (GaP NTs) have been analyzed by employing a systematic ab-intio approach based on density functional theory using generalized gradient approximation with revised Perdew Burke Ernzerhoff type parameterization. Diameter dependence of bond length, buckling, binding energy, and band gap has been investigated and the analysis shows that the bond length and buckling decreases with increasing diameter of the tube, highest binding energy of (16, 0) confirms this as the most stable amongst all the NTs taken into consideration. The present GaP NTs shows direct band gap and it increases with diameter of the tubes. Using a two probe model for (4, 0) NT the I-V relationship shows an exponential increase in current on applying bias voltage beyond 1.73 volt.

Wireless multi-level terahertz amplitude modulator using active metamaterial-based spatial light modulation.

PubMed

Rout, Saroj; Sonkusale, Sameer

2016-06-27

The ever increasing demand for bandwidth in wireless communication systems will inevitably lead to the extension of operating frequencies toward the terahertz (THz) band known as the 'THz gap'. Towards closing this gap, we present a multi-level amplitude shift keying (ASK) terahertz wireless communication system using terahertz spatial light modulators (SLM) instead of traditional voltage mode modulation, achieving higher spectral efficiency for high speed communication. The fundamental principle behind this higher efficiency is the conversion of a noisy voltage domain signal to a noise-free binary spatial pattern for effective amplitude modulation of a free-space THz carrier wave. Spatial modulation is achieved using an an active metamaterial array embedded with pseudomorphic high-electron mobility (pHEMT) designed in a consumer-grade galium-arsenide (GaAs) integrated circuit process which enables electronic control of its THz transmissivity. Each array is assembled as individually controllable tiles for transmissive terahertz spatial modulation. Using the experimental data from our metamaterial based modulator, we show that a four-level ASK digital communication system has two orders of magnitude improvement in symbol error rate (SER) for a degradation of 20 dB in transmit signal-to-noise ratio (SNR) using spatial light modulation compared to voltage controlled modulation.

On transition from diffuse mode to the constricted one with high-current cathode spot in overvoltage open discharge in D2

NASA Astrophysics Data System (ADS)

Akishev, Yu S.; Karalnik, V. B.; Medvedev, M. A.; Petryakov, A. V.; Trushkin, N. I.; Shafikov, A. G.

2017-11-01

So called “open discharges” in a narrow gap between the solid cathode and grid anode are widely used for generation of the pulsed high-current electron beams with energy up to 100 keV. The need to get high-energy e-beams leads to the necessity in using of strong overvoltage of the short gas gap with the reduced electric field of the order of 105 Td or higher. The discharge under strong overvoltage is unstable and tends to transit into high-current regime with low voltage. In the case of the open discharge in D2 at low pressure (about 0.5-2 Torr) and powered by stepwise voltage with amplitude up to 25 kV we revealed that this discharge exhibits two diffuse regimes which follow one by one and finally transits into the constricted mode with formation of high-current spots on the cathode. The physical properties of these gas discharge regimes have been explored in detail with the usage of the fast multi-frame camera synchronized with the current and voltage of discharge. Our findings promote more insight into physics of the overvoltage open discharge generating the e-beams with energy up to 25 keV.

Voltage stress effects on microcircuit accelerated life test failure rates

NASA Technical Reports Server (NTRS)

Johnson, G. M.

1976-01-01

The applicability of Arrhenius and Eyring reaction rate models for describing microcircuit aging characteristics as a function of junction temperature and applied voltage was evaluated. The results of a matrix of accelerated life tests with a single metal oxide semiconductor microcircuit operated at six different combinations of temperature and voltage were used to evaluate the models. A total of 450 devices from two different lots were tested at ambient temperatures between 200 C and 250 C and applied voltages between 5 Vdc and 15 Vdc. A statistical analysis of the surface related failure data resulted in bimodal failure distributions comprising two lognormal distributions; a 'freak' distribution observed early in time, and a 'main' distribution observed later in time. The Arrhenius model was shown to provide a good description of device aging as a function of temperature at a fixed voltage. The Eyring model also appeared to provide a reasonable description of main distribution device aging as a function of temperature and voltage. Circuit diagrams are shown.

Bias Voltage-Dependent Impedance Spectroscopy Analysis of Hydrothermally Synthesized ZnS Nanoparticles

NASA Astrophysics Data System (ADS)

Dey, Arka; Dhar, Joydeep; Sil, Sayantan; Jana, Rajkumar; Ray, Partha Pratim

2018-04-01

In this report, bias voltage-dependent dielectric and electron transport properties of ZnS nanoparticles were discussed. ZnS nanoparticles were synthesized by introducing a modified hydrothermal process. The powder XRD pattern indicates the phase purity, and field emission scanning electron microscope image demonstrates the morphology of the synthesized sample. The optical band gap energy (E g = 4.2 eV) from UV measurement explores semiconductor behavior of the synthesized material. The electrical properties were performed at room temperature using complex impedance spectroscopy (CIS) technique as a function of frequency (40 Hz-10 MHz) under different forward dc bias voltages (0-1 V). The CIS analysis demonstrates the contribution of bulk resistance in conduction mechanism and its dependency on forward dc bias voltages. The imaginary part of the impedance versus frequency curve exhibits the existence of relaxation peak which shifts with increasing dc forward bias voltages. The dc bias voltage-dependent ac and dc conductivity of the synthesized ZnS was studied on thin film structure. A possible hopping mechanism for electrical transport processes in the system was investigated. Finally, it is worth to mention that this analysis of bias voltage-dependent dielectric and transport properties of as-synthesized ZnS showed excellent properties for emerging energy applications.

Ultrananocrystalline Diamond Cantilever Wide Dynamic Range Acceleration/Vibration /Pressure Sensor

DOEpatents

Krauss, Alan R.; Gruen, Dieter M.; Pellin, Michael J.; Auciello, Orlando

2003-09-02

An ultrananocrystalline diamond (UNCD) element formed in a cantilever configuration is used in a highly sensitive, ultra-small sensor for measuring acceleration, shock, vibration and static pressure over a wide dynamic range. The cantilever UNCD element may be used in combination with a single anode, with measurements made either optically or by capacitance. In another embodiment, the cantilever UNCD element is disposed between two anodes, with DC voltages applied to the two anodes. With a small AC modulated voltage applied to the UNCD cantilever element and because of the symmetry of the applied voltage and the anode-cathode gap distance in the Fowler-Nordheim equation, any change in the anode voltage ratio V1/V2 required to maintain a specified current ratio precisely matches any displacement of the UNCD cantilever element from equilibrium. By measuring changes in the anode voltage ratio required to maintain a specified current ratio, the deflection of the UNCD cantilever can be precisely determined. By appropriately modulating the voltages applied between the UNCD cantilever and the two anodes, or limit electrodes, precise independent measurements of pressure, uniaxial acceleration, vibration and shock can be made. This invention also contemplates a method for fabricating the cantilever UNCD structure for the sensor.

Ultrananocrystalline diamond cantilever wide dynamic range acceleration/vibration/pressure sensor

DOEpatents

Krauss, Alan R [Naperville, IL; Gruen, Dieter M [Downers Grove, IL; Pellin, Michael J [Naperville, IL; Auciello, Orlando [Bolingbrook, IL

2002-07-23

An ultrananocrystalline diamond (UNCD) element formed in a cantilever configuration is used in a highly sensitive, ultra-small sensor for measuring acceleration, shock, vibration and static pressure over a wide dynamic range. The cantilever UNCD element may be used in combination with a single anode, with measurements made either optically or by capacitance. In another embodiment, the cantilever UNCD element is disposed between two anodes, with DC voltages applied to the two anodes. With a small AC modulated voltage applied to the UNCD cantilever element and because of the symmetry of the applied voltage and the anode-cathode gap distance in the Fowler-Nordheim equation, any change in the anode voltage ratio V1/N2 required to maintain a specified current ratio precisely matches any displacement of the UNCD cantilever element from equilibrium. By measuring changes in the anode voltage ratio required to maintain a specified current ratio, the deflection of the UNCD cantilever can be precisely determined. By appropriately modulating the voltages applied between the UNCD cantilever and the two anodes, or limit electrodes, precise independent measurements of pressure, uniaxial acceleration, vibration and shock can be made. This invention also contemplates a method for fabricating the cantilever UNCD structure for the sensor.

Influence of multi-depositions on the final properties of thermally evaporated TlBr films

NASA Astrophysics Data System (ADS)

Destefano, N.; Mulato, M.

2010-12-01

Thallium bromide is a promising candidate material for photodetectors in medical imaging systems. This work investigates the structural, optical and electrical properties of thermally evaporated TlBr films. The main fabrication parameter is the number of depositions. The use of sequential runs is aimed to increase the thickness of the films, as necessary, for technological applications. We deposited films using one-four runs, that led to maximum thickness of about 50 μm. Crystallographic and morphological changes were observed with varying deposition runs. Nevertheless, the optical gap and electrical resistivity in the dark remained constant at about 2.85 eV and 10 9 Ω cm, respectively. Thicker samples have a larger ratio of photo-to-dark signal under medical X-ray exposure, with a larger linear region as a function of applied voltage. The results are discussed aiming at future technological applications in medical imaging.

Free-air ionization chamber, FAC-IR-300, designed for medium energy X-ray dosimetry

NASA Astrophysics Data System (ADS)

Mohammadi, S. M.; Tavakoli-Anbaran, H.; Zeinali, H. Z.

2017-01-01

The primary standard for X-ray photons is based on parallel-plate free-air ionization chamber (FAC). Therefore, the Atomic Energy Organization of Iran (AEOI) is tried to design and build the free-air ionization chamber, FAC-IR-300, for low and medium energy X-ray dosimetry. The main aim of the present work is to investigate specification of the FAC-IR-300 ionization chamber and design it. FAC-IR-300 dosimeter is composed of two parallel plates, a high voltage (HV) plate and a collector plate, along with a guard electrode that surrounds the collector plate. The guard plate and the collector were separated by an air gap. For obtaining uniformity in the electric field distribution, a group of guard strips was used around the ionization chamber. These characterizations involve determining the exact dimensions of the ionization chamber by using Monte Carlo simulation and introducing correction factors.

Calculating electronic tunnel currents in networks of disordered irregularly shaped nanoparticles by mapping networks to arrays of parallel nonlinear resistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aghili Yajadda, Mir Massoud

2014-10-21

We have shown both theoretically and experimentally that tunnel currents in networks of disordered irregularly shaped nanoparticles (NPs) can be calculated by considering the networks as arrays of parallel nonlinear resistors. Each resistor is described by a one-dimensional or a two-dimensional array of equal size nanoparticles that the tunnel junction gaps between nanoparticles in each resistor is assumed to be equal. The number of tunnel junctions between two contact electrodes and the tunnel junction gaps between nanoparticles are found to be functions of Coulomb blockade energies. In addition, the tunnel barriers between nanoparticles were considered to be tilted at highmore » voltages. Furthermore, the role of thermal expansion coefficient of the tunnel junction gaps on the tunnel current is taken into account. The model calculations fit very well to the experimental data of a network of disordered gold nanoparticles, a forest of multi-wall carbon nanotubes, and a network of few-layer graphene nanoplates over a wide temperature range (5-300 K) at low and high DC bias voltages (0.001 mV–50 V). Our investigations indicate, although electron cotunneling in networks of disordered irregularly shaped NPs may occur, non-Arrhenius behavior at low temperatures cannot be described by the cotunneling model due to size distribution in the networks and irregular shape of nanoparticles. Non-Arrhenius behavior of the samples at zero bias voltage limit was attributed to the disorder in the samples. Unlike the electron cotunneling model, we found that the crossover from Arrhenius to non-Arrhenius behavior occurs at two temperatures, one at a high temperature and the other at a low temperature.« less

Double gaps along Shaker S4 demonstrate omega currents at three different closed states.

PubMed

Gamal El-Din, Tamer M; Heldstab, Hansjakob; Lehmann, Claudia; Greeff, Nikolaus G

2010-01-01

The aim of the present study was to investigate in detail how the voltage sensor in the Shaker potassium channel moves during the gating process. After the publication of the open channel structure from the crystallized K(V)AP channel in 2003, an alternative so-called "paddle" model was put forward in contrast to the existing helical screw model. The voltage sensor S4 contains 4 arginine residues relevant for gating, R1(362), R2(365), R3(368) and R4(371), each separated by 2 neutral residues. These charged residues coil as one of three threads on the S4-alpha-helix. Based on a previous finding that the mutation R1S leads to the so-called omega leak current through a "gating-pore" in the closed state, we introduced gaps systematically along the arginine thread substituting long arginines by short serines. Mutations R2S or R3S did neither create transient nor steady leaks. The fact that the native residue A359, which is located three amino acids in front of R1, is a short one, motivated us to check its role. Mutation of A359 to arginine blocked the omega current in the R1S mutant indicating that the omega pore is occupied by A359 and R1. Introducing further double gaps (RR to SS) at sequential positions (0 + 1, 1 + 2, 2 + 3), produced clear leak currents which were remarkably stable over a wide voltage range. These leaks contradict that S4 would swing together with S3 in lipid according to the paddle hypothesis. Rather, our results show that during gating the S4 segment moves in 3 helical steps through a fixed pore formed by the channel protein.

Toward tunable band gap and tunable dirac point in bilayer graphene with molecular doping.

PubMed

Yu, Woo Jong; Liao, Lei; Chae, Sang Hoon; Lee, Young Hee; Duan, Xiangfeng

2011-11-09

The bilayer graphene has attracted considerable attention for potential applications in future electronics and optoelectronics because of the feasibility to tune its band gap with a vertical displacement field to break the inversion symmetry. Surface chemical doping in bilayer graphene can induce an additional offset voltage to fundamentally affect the vertical displacement field and the band gap opening in bilayer graphene. In this study, we investigate the effect of chemical molecular doping on band gap opening in bilayer graphene devices with single or dual gate modulation. Chemical doping with benzyl viologen molecules modulates the displacement field to allow the opening of a transport band gap and the increase of the on/off ratio in the bilayer graphene transistors. Additionally, Fermi energy level in the opened gap can be rationally controlled by the amount of molecular doping to obtain bilayer graphene transistors with tunable Dirac points, which can be readily configured into functional devices, such as complementary inverters.

Ionic blockade of the rat connexin40 gap junction channel by large tetraalkylammonium ions.

PubMed

Musa, H; Gough, J D; Lees, W J; Veenstra, R D

2001-12-01

The rat connexin40 gap junction channel is permeable to monovalent cations including tetramethylammonium and tetraethylammonium ions. Larger tetraalkyammonium (TAA(+)) ions beginning with tetrabutylammonium (TBA(+)) reduced KCl junctional currents disproportionately. Ionic blockade by tetrapentylammonium (TPeA(+)) and tetrahexylammonium (THxA(+)) ions were concentration- and voltage-dependent and occurred only when TAA(+) ions were on the same side as net K(+) efflux across the junction, indicative of block of the ionic permeation pathway. The voltage-dependent dissociation constants (K(m)(V(j))) were lower for THxA(+) than TPeA(+), consistent with steric effects within the pore. The K(m)-V(j) relationships for TPeA(+) and THxA(+) were fit with different reaction rate models for a symmetrical (homotypic) connexin gap junction channel and were described by either a one- or two-site model that assumed each ion traversed the entire V(j) field. Bilateral addition of TPeA(+) ions confirmed a common site of interaction within the pore that possessed identical K(m)(V(j)) values for cis-trans concentrations of TPeA(+) ions as indicated by the modeled I-V relations and rapid channel block that precluded unitary current measurements. The TAA(+) block of K(+) currents and bilateral TPeA(+) interactions did not alter V(j)-gating of Cx40 gap junctions. N-octyl-tributylammonium and -triethylammonium also blocked rCx40 channels with higher affinity and faster kinetics than TBA(+) or TPeA(+), indicative of a hydrophobic site within the pore near the site of block.

High Photoluminescence Quantum Yield in Band Gap Tunable Bromide Containing Mixed Halide Perovskites

DOE PAGES

Sutter-Fella, Carolin M.; Li, Yanbo; Amani, Matin; ...

2015-12-21

Hybrid organic-inorganic halide perovskite based semiconductor materials are attractive for use in a wide range of optoelectronic devices because they combine the advantages of suitable optoelectronic attributes and simultaneously low-cost solution processability. Here, we present a two-step low-pressure vapor-assisted solution process to grow high quality homogeneous CH 3NH 3PbI 3-xBr x perovskite films over the full band gap range of 1.6-2.3 eV. Photoluminescence light-in versus light-out characterization techniques are used to provide new insights into the optoelectronic properties of Br-containing hybrid organic-inorganic perovskites as a function of optical carrier injection by employing pump-powers over a 6 orders of magnitude dynamicmore » range. The internal luminescence quantum yield of wide band gap perovskites reaches impressive values up to 30%. This high quantum yield translates into substantial quasi-Fermi level splitting and high "luminescence or optically implied" open-circuit voltage. Most importantly, both attributes, high internal quantum yield and high optically implied open-circuit voltage, are demonstrated over the entire band gap range (1.6 eV ≤ E g ≤ 2.3 eV). These results establish the versatility of Br-containing perovskite semiconductors for a variety of applications and especially for the use as high-quality top cell in tandem photovoltaic devices in combination with industry dominant Si bottom cells. (Figure Presented).« less

A contribution to the expansion of the applicability of electrostatic forces in micro transducers

NASA Astrophysics Data System (ADS)

Schenk, Harald; Conrad, Holger; Gaudet, Matthieu; Uhlig, Sebastian; Kaiser, Bert; Langa, Sergiu; Stolz, Michael; Schimmanz, Klaus

2017-02-01

Electrostatic actuation is highly efficient at micro and nanoscale. However, large deflection in common electrostatically driven MEMS requires large electrode separation and thus high driving voltages. To offer a solution to this problem we developed a novel electrostatic actuator class, which is based on a force-to-stress transformation in the periodically patterned upper layer of a silicon cantilever beam. We report on advances in the development of such electrostatic bending actuators. Several variants of a CMOS compatible and RoHS-directive compliant fabrication processes to fabricate vertical deflecting beams with a thickness of 30 μm are presented. A concept to extend the actuation space towards lateral deflecting elements is introduced. The fabricated and characterized vertical deflecting cantilever beam variants make use of a 0.2 μm electrode gap and achieve deflections of up to multiples of this value. Simulation results based on an FE-model applied to calculate the voltage dependent curvature for various actuator cell designs are presented. The calculated values show very good agreement with the experimentally determined voltage controlled actuation curvatures. Particular attention was paid to parasitic effects induced by small, sub micrometer, electrode gaps. This includes parasitic currents between the two electrode layers. No experimental hint was found that such effects significantly influence the curvature for a control voltage up to 45 V. The paper provides an outlook for the applicability of the technology based on specifically designed and fabricated actuators which allow for a large variety of motion patterns including out-of-plane and in-plane motion as well as membrane deformation and linear motion.

DAWN Mission Bus and Waveguide Venting Analysis Review

NASA Technical Reports Server (NTRS)

Cragg, Clinton H.; Kichak, Robert A.; Sutter, James K.; Holder, Donald; Jeng, Frank; Ruitberg, Arthur; Sank, Victor

2007-01-01

A concern was raised regarding the time after launch when the DAWN Mission Communications Subsystem, which contains a 100 Watt X-Band Traveling Wave Tube Amplifier (TWTA) with a high voltage ((approximately 7 Kilo Volt (KV)) Electronic Power Converter (EPC), will be powered on for the first post-launch downlink. This activation is planned to be approximately one hour after launch. Orbital Sciences (the DAWN Mission spacecraft contractor) typically requires a 24-hour wait period prior to high voltage initiation for Earth-orbiting Science and GEO spacecraft. The concern relates to the issue of corona and/or radio frequency (RF) breakdown of the TWTA ((high voltage direct current (DC) and RF)), and of the microwave components (high voltage RF) in the presence of partial atmospheric pressures or outgassing constituents. In particular, generally the diplexer and circulator are susceptible to RF breakdown in the corona region due to the presence of small physical gaps (( 2.5 millimeter (mm)) between conductors that carry an RF voltage. The NESC concurred the DAWN Mission communication system is safe for activation.

Evaluation of niobium as candidate electrode material for DC high voltage photoelectron guns

DOE PAGES

BastaniNejad, M.; Mohamed, Md. Abdullah; Elmustafa, A. A.; ...

2012-08-17

In this study, the field emission characteristics of niobium electrodes were compared to those of stainless steel electrodes using a DC high voltage field emission test apparatus. A total of eight electrodes were evaluated: two 304 stainless steel electrodes polished to mirror-like finish with diamond grit and six niobium electrodes (two single-crystal, two large-grain and two fine-grain) that were chemically polished using a buffered-chemical acid solution. Upon the first application of high voltage, the best large-grain and single-crystal niobium electrodes performed better than the best stainless steel electrodes, exhibiting less field emission at comparable voltage and gradient. In all cases,more » field emission from electrodes (stainless steel and/or niobium) could be significantly reduced and sometimes completely eliminated, by introducing krypton gas into the vacuum chamber while the electrode was biased at high voltage. Of all the electrodes tested, a large-grain niobium electrode performed the best, exhibiting no measurable field emission (< 10 pA) at 225 kV with 20 mm cathode/anode gap, corresponding to a gradient of 18.7 MV/m.« less

Evaluation of Niobium as Candidate Electrode Material for DC High Voltage Photoelectron Guns

NASA Technical Reports Server (NTRS)

BastaniNejad, M.; Mohamed, Abdullah; Elmustafa, A. A.; Adderley, P.; Clark, J.; Covert, S.; Hansknecht, J.; Hernandez-Garcia, C.; Poelker, M.; Mammei, R.;

A compact nanosecond pulse generator for DBD tube characterization.

PubMed

Rai, S K; Dhakar, A K; Pal, U N

2018-03-01

High voltage pulses of very short duration and fast rise time are required for generating uniform and diffuse plasma under various operating conditions. Dielectric Barrier Discharge (DBD) has been generated by high voltage pulses of short duration and fast rise time to produce diffuse plasma in the discharge gap. The high voltage pulse power generators have been chosen according to the requirement for the DBD applications. In this paper, a compact solid-state unipolar pulse generator has been constructed for characterization of DBD plasma. This pulsar is designed to provide repetitive pulses of 315 ns pulse width, pulse amplitude up to 5 kV, and frequency variation up to 10 kHz. The amplitude of the output pulse depends on the dc input voltage. The output frequency has been varied by changing the trigger pulse frequency. The pulsar is capable of generating pulses of positive or negative polarity by changing the polarity of pulse transformer's secondary. Uniform and stable homogeneous dielectric barrier discharge plasma has been produced successfully in a xenon DBD tube at 400-mbar pressure using the developed high voltage pulse generator.

A compact nanosecond pulse generator for DBD tube characterization

NASA Astrophysics Data System (ADS)

Rai, S. K.; Dhakar, A. K.; Pal, U. N.

2018-03-01

High voltage pulses of very short duration and fast rise time are required for generating uniform and diffuse plasma under various operating conditions. Dielectric Barrier Discharge (DBD) has been generated by high voltage pulses of short duration and fast rise time to produce diffuse plasma in the discharge gap. The high voltage pulse power generators have been chosen according to the requirement for the DBD applications. In this paper, a compact solid-state unipolar pulse generator has been constructed for characterization of DBD plasma. This pulsar is designed to provide repetitive pulses of 315 ns pulse width, pulse amplitude up to 5 kV, and frequency variation up to 10 kHz. The amplitude of the output pulse depends on the dc input voltage. The output frequency has been varied by changing the trigger pulse frequency. The pulsar is capable of generating pulses of positive or negative polarity by changing the polarity of pulse transformer's secondary. Uniform and stable homogeneous dielectric barrier discharge plasma has been produced successfully in a xenon DBD tube at 400-mbar pressure using the developed high voltage pulse generator.

A study of electrostatic spring softening for dual-axis micromirror

NASA Astrophysics Data System (ADS)

Zhao, Yi; E H Tay, Francis; Zhou, Guangya; Siong Chau, Fook

2006-08-01

Electrostatic spring softening is an important characteristic of electrostatically actuated dual-axis micromirror, since it lowers the resonant frequencies. This paper presents an approach based on approximating the electrostatic forces by the first-order Taylor's series expansion to investigate this characteristic. The dual-axis micromirror studied in this paper has three motion modes, two torsional (about x- and y-axis, respectively) and one translational (about z-axis). The stiffnesses of all these modes are softened by a DC bias voltage applied to the mirror plate. The resonant frequencies are lowered with the increment of the bias voltage. The relationship of the bias voltage and the resonant frequencies of all the motion modes is derived. The analytical results show that the resonant frequency curves are affected by the capacitor geometries, i.e. the gap between the mirror plate and the electrodes and the electrodes size. The lowering curves drop slowly when the bias voltage is small. While for large bias voltage, the lowering curves drop rapidly. The experiment results are consistent with those obtained by the analytical approach.

Electronic correlation effects and the Coulomb gap at finite temperature.

PubMed

Sandow, B; Gloos, K; Rentzsch, R; Ionov, A N; Schirmacher, W

2001-02-26

We have investigated the effect of the long-range Coulomb interaction on the one-particle excitation spectrum of n-type germanium, using tunneling spectroscopy on mechanically controllable break junctions. At low temperatures, the tunnel conductance shows a minimum at zero bias voltage due to the Coulomb gap. Above 1 K, the gap is filled by thermal excitations. This behavior is reflected in the variable-range hopping resistivity measured on the same samples: up to a few degrees Kelvin the Efros-Shklovskii lnR infinity T(-1/2) law is obeyed, whereas at higher temperatures deviations from this law occur. The type of crossover differs from that considered previously in the literature.

Influence of Ambient Humidity on the Voltage Response of Ionic Polymer-Metal Composite Sensor.

PubMed

Zhu, Zicai; Horiuchi, Tetsuya; Kruusamäe, Karl; Chang, Longfei; Asaka, Kinji

2016-03-31

Electrical potential based on ion migration exists not only in natural systems but also in ionic polymer materials. In order to investigate the influence of ambient humidity on voltage response, classical Au-Nafion IPMC was chosen as the reference sample. Voltage response under a bending deformation was measured in two ways: first, continuous measurement of voltage response in the process of absorption and desorption of water to study the tendency of voltage variation at all water states; second, measurements at multiple fixed ambient humidity levels to characterize the process of voltage response quantitatively. Ambient humidity influences the voltage response mainly by varying water content in ionic polymer. Under a step bending, the amplitude of initial voltage peak first increases and then decreases as the ambient humidity and the inherent water content decrease. This tendency is explained semiquantitatively by mass storage capacity related to the stretchable state of the Nafion polymer network. Following the initial peak, the voltage shows a slow decay to a steady state, which is first characterized in this paper. The relative voltage decay during the steady state always decreases as the ambient humidity is lowered. It is ascribed to progressive increase of the ratio between the water molecules in the cation hydration shell to the free water. Under sinusoidal mechanical bending excitation in the range of 0.1-10 Hz, the voltage magnitude increases with frequency at high ambient humidity but decreases with frequency at low ambient humidity. The relationship is mainly controlled by the voltage decay effect and the response speed.

Gap-Junctional communication between developing Drosophila muscles is essential for their normal development.

PubMed

Todman, M G; Baines, R A; Stebbings, L A; Davies, J A; Bacon, J P

1999-01-01

Recent experiments have demonstrated that a family of proteins, known as the innexins, are structural components of invertebrate gap junctions. The shaking-B (shak-B) locus of Drosophila encodes two members of this emerging family, Shak-B(lethal) and Shak-B(neural). This study focuses on the role of Shak-B gap junctions in the development of embryonic and larval muscle. During embryogenesis, shak-B transcripts are expressed in a subset of the somatic muscles; expression is strong in ventral oblique muscles (VO4-6) but only weak in ventral longitudinals (VL3 and 4). Carboxyfluorescein injected into VO4 of wild-type early stage 16 embryos spreads, via gap junctions, to label adjacent muscles, including VL3 and 4. In shak-B2 embryos (in which the shak-B(neural) function is disrupted), dye injected into VO4 fails to spread into other muscles. In the first instar larva, when dye coupling between muscles is no longer present, another effect of the shak-B2 mutation is revealed by whole-cell voltage clamp. In a calcium-free saline, only two voltage-activated potassium currents are present in wild-type muscles; a fast IA and a slow IK current. In shak-B2 larvae, these two currents are significantly reduced in magnitude in VO4 and 5, but remain normal in VL3. Expression of shak-B(neural) in a shak-B2 background fully rescues both dye coupling in embryonic muscle and whole-cell currents in first instar VO4 and 5. Our observations show that Shak-B(neural) is one of a set of embryonic gap-junction proteins, and that it is required for the normal temporal development of potassium currents in some larval muscles.

Optically initiated silicon carbide high voltage switch

DOEpatents

Caporaso, George J [Livermore, CA; Sampayan, Stephen E [Manteca, CA; Sullivan, James S [Livermore, CA; Sanders,; David, M [Livermore, CA

2011-02-22

An improved photoconductive switch having a SiC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.

High Efficiency Quantum Well Waveguide Solar Cells and Methods for Constructing the Same

NASA Technical Reports Server (NTRS)

Sood, Ashok K. (Inventor); Welser, Roger E. (Inventor)

2014-01-01

Photon absorption, and thus current generation, is hindered in conventional thin-film solar cell designs, including quantum well structures, by the limited path length of incident light passing vertically through the device. Optical scattering into lateral waveguide structures provides a physical mechanism to increase photocurrent generation through in-plane light trapping. However, the insertion of wells of high refractive index material with lower energy gap into the device structure often results in lower voltage operation, and hence lower photovoltaic power conversion efficiency. The voltage output of an InGaAs quantum well waveguide photovoltaic device can be increased by employing a III-V material structure with an extended wide band gap emitter heterojunction. Analysis of the light IV characteristics reveals that non-radiative recombination components of the underlying dark diode current have been reduced, exposing the limiting radiative recombination component and providing a pathway for realizing solar-electric conversion efficiency of 30% or more in single junction cells.

Single-Layer Halide Perovskite Light-Emitting Diodes with Sub-Band Gap Turn-On Voltage and High Brightness.

PubMed

Li, Junqiang; Shan, Xin; Bade, Sri Ganesh R; Geske, Thomas; Jiang, Qinglong; Yang, Xin; Yu, Zhibin

2016-10-03

Charge-carrier injection into an emissive semiconductor thin film can result in electroluminescence and is generally achieved by using a multilayer device structure, which requires an electron-injection layer (EIL) between the cathode and the emissive layer and a hole-injection layer (HIL) between the anode and the emissive layer. The recent advancement of halide perovskite semiconductors opens up a new path to electroluminescent devices with a greatly simplified device structure. We report cesium lead tribromide light-emitting diodes (LEDs) without the aid of an EIL or HIL. These so-called single-layer LEDs have exhibited a sub-band gap turn-on voltage. The devices obtained a brightness of 591 197 cd m -2 at 4.8 V, with an external quantum efficiency of 5.7% and a power efficiency of 14.1 lm W -1 . Such an advancement demonstrates that very high efficiency of electron and hole injection can be obtained in perovskite LEDs even without using an EIL or HIL.

Magneto-ballistic transport in GaN nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Santoruvo, Giovanni, E-mail: giovanni.santoruvo@epfl.ch; Allain, Adrien; Ovchinnikov, Dmitry

2016-09-05

The ballistic filtering property of nanoscale crosses was used to investigate the effect of perpendicular magnetic fields on the ballistic transport of electrons on wide band-gap GaN heterostructures. The straight scattering-less trajectory of electrons was modified by a perpendicular magnetic field which produced a strong non-linear behavior in the measured output voltage of the ballistic filters and allowed the observation of semi-classical and quantum effects, such as quenching of the Hall resistance and manifestation of the last plateau, in excellent agreement with the theoretical predictions. A large measured phase coherence length of 190 nm allowed the observation of universal quantum fluctuationsmore » and weak localization of electrons due to quantum interference up to ∼25 K. This work also reveals the prospect of wide band-gap GaN semiconductors as a platform for basic transport and quantum studies, whose properties allow the investigation of ballistic transport and quantum phenomena at much larger voltages and temperatures than in other semiconductors.« less

Size dependent tunnel diode effects in gold tipped CdSe nanodumbbells.

PubMed

Saraf, Deepashri; Kumar, Ashok; Kanhere, Dilip; Kshirsagar, Anjali

2017-02-07

We report simulation results for scanning tunneling spectroscopy of gold-tipped CdSe nanodumbbells of lengths ∼27 Å and ∼78 Å. Present results are based on Bardeen, Tersoff, and Hamann formalism that takes inputs from ab initio calculations. For the shorter nanodumbbell, the current-voltage curves reveal negative differential conductance, the characteristic of a tunnel diode. This behaviour is attributed to highly localized metal induced gap states that rapidly decay towards the center of the nanodumbbell leading to suppression in tunneling. In the longer nanodumbbell, these gap states are absent in the central region, as a consequence of which zero tunneling current is observed in that region. The overall current-voltage characteristics for this nanodumbbell are observed to be largely linear near the metal-semiconductor interface and become rectifying at the central region, the nature being similar to its parent nanorod. The cross-sectional heights of these nanodumbbells also show bias-dependence where we begin to observe giant Stark effect features in the semiconducting central region of the longer nanodumbbell.

Generation of ozone by pulsed corona discharge over water surface in hybrid gas liquid electrical discharge reactor

NASA Astrophysics Data System (ADS)

Lukes, Petr; Clupek, Martin; Babicky, Vaclav; Janda, Vaclav; Sunka, Pavel

2005-02-01

Ozone formation by a pulse positive corona discharge generated in the gas phase between a planar high voltage electrode made from reticulated vitreous carbon and a water surface with an immersed ground stainless steel plate electrode was investigated under various operating conditions. The effects of gas flow rate (0.5-3 litre min-1), discharge gap spacing (2.5-10 mm), applied input power (2-45 W) and gas composition (oxygen containing argon or nitrogen) on ozone production were determined. Ozone concentration increased with increasing power input and with increasing discharge gap. The production of ozone was significantly affected by the presence of water vapour formed through vaporization of water at the gas-liquid interface by the action of the gas phase discharge. The highest energy efficiency for ozone production was obtained using high voltage pulses of approximately 150 ns duration in Ar/O2 mixtures with the maximum efficiency (energy yield) of 23 g kW h-1 for 40% argon content.

Nested Helmholtz coil design for producing homogeneous transient rotating magnetic fields

NASA Astrophysics Data System (ADS)

Podaru, George; Moore, John; Dani, Raj Kumar; Prakash, Punit; Chikan, Viktor

2015-03-01

Electromagnets that can produce strong rotating magnetic fields at kHz frequencies are potentially very useful to exert rotating force on magnetic nanoparticles as small as few nanometers in size. In this article, the construction of a pulsed high-voltage rotating electromagnet is demonstrated based on a nested Helmholtz coil design. The energy for the coils is provided by two high-voltage discharge capacitors. The triggered spark gaps used in the experiments show sufficient accuracy to achieve the high frequency rotating magnetic field. The measured strength of the rotating magnetic field is 200 mT. This magnetic field is scalable by increasing the number of turns on the coils, by reducing the dimensions of the coils and by increasing the discharge current/voltage of the capacitors.

Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators

PubMed

Dimitrakopoulos; Purushothaman; Kymissis; Callegari; Shaw

1999-02-05

The gate bias dependence of the field-effect mobility in pentacene-based insulated gate field-effect transistors (IGFETs) was interpreted on the basis of the interaction of charge carriers with localized trap levels in the band gap. This understanding was used to design and fabricate IGFETs with mobility of more than 0.3 square centimeter per volt per second and current modulation of 10(5), with the use of amorphous metal oxide gate insulators. These values were obtained at operating voltage ranges as low as 5 volts, which are much smaller than previously reported results. An all-room-temperature fabrication process sequence was used, which enabled the demonstration of high-performance organic IGFETs on transparent plastic substrates, at low operating voltages for organic devices.

Power Supply For 25-Watt Arc Lamp

NASA Technical Reports Server (NTRS)

Leighty, B. D.

1985-01-01

Dual-voltage circuitry both strikes and maintains arc. New power supply designed (and several units already in use) that replaces relay/choke combination with solid-state starter. New power supply consists of two main sections. First section (low voltage power supply section) is 84-volt directcurrent supply. Second section (high-voltage starter circuit) is CockroftWalton voltage multiplier. Used as light sources for schlieren, shadowgraph, and other flow-visualization techniques.

Design of air-gapped magnetic-core inductors for superimposed direct and alternating currents

NASA Technical Reports Server (NTRS)

Ohri, A. K.; Wilson, T. G.; Owen, H. A., Jr.

1976-01-01

Using data on standard magnetic-material properties and standard core sizes for air-gap-type cores, an algorithm designed for a computer solution is developed which optimally determines the air-gap length and locates the quiescent point on the normal magnetization curve so as to yield an inductor design with the minimum number of turns for a given ac voltage and frequency and with a given dc bias current superimposed in the same winding. Magnetic-material data used in the design are the normal magnetization curve and a family of incremental permeability curves. A second procedure, which requires a simpler set of calculations, starts from an assigned quiescent point on the normal magnetization curve and first screens candidate core sizes for suitability, then determines the required turns and air-gap length.

Spark gaps synchronization using electrical trigger pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agarwal, Ritu; Saroj, P.C.; Sharma, Archana

In pulse power systems, it is required to have synchronized triggering of two or more high voltage spark gaps capable of switching large currents, using electrical trigger pulses. This paper intends to study the synchronization of spark gaps using electrical trigger. The trigger generator consists of dc supply, IGBT switch and driver circuit which generates 8kV, 400ns (FWHM) pulses. The experiment was carried out using two 0.15uF/50kV energy storage capacitors charged to 12kV and discharged through stainless steel spark gaps of diameter 9 mm across 10 ohm non inductive load. The initial experiment shows that synchronization has been achieved withmore » jitter of 50 to 100ns. Further studies carried out to reduce the jitter time by varying various electrical parameters will be presented. (author)« less

Extended plasma channels created by UV laser in air and their application to control electric discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zvorykin, V. D., E-mail: zvorykin@sci.lebedev.ru; Ionin, A. A.; Levchenko, A. O.

2015-02-15

Results are presented from a series of experimental and theoretical studies on creating weakly ionized extended plasma channels in atmospheric air by 248-nm UV laser radiation and their application to control long high-voltage discharges. The main mechanisms of air ionization by UV laser pulses with durations from 100 fs to 25 ns and intensities in the ranges of 3×10{sup 11}–1.5×10{sup 13} and 3×10{sup 6}–3×10{sup 11} W/cm{sup 2}, respectively, which are below the threshold for optical gas breakdown, as well as the main relaxation processes in plasma with a density of 10{sup 9}–10{sup 17} cm{sup −3}, are considered. It is shownmore » that plasma channels in air can be efficiently created by amplitude-modulated UV pulses consisting of a train of subpicosecond pulses producing primary photoelectrons and a long UV pulse suppressing electron attachment and sustaining the density of free electrons in plasma. Different modes of the generation and amplification of trains of subterawatt subpicosecond pulses and amplitude-modulated UV pulses with an energy of several tens of joules were implemented on the GARPUN-MTW hybrid Ti:sapphire-KrF laser facility. The filamentation of such UV laser beams during their propagation in air over distances of up to 100 m and the parameters of the corresponding plasma channels were studied experimentally and theoretically. Laser initiation of high-voltage electric discharges and control of their trajectories by means of amplitude-modulated UV pulses, as well as the spatiotemporal structure of breakdowns in air gaps with length of up to 80 cm, were studied.« less

Charged Residues at the First Transmembrane Region Contribute to the Voltage Dependence of the Slow Gate of Connexins.

PubMed

Pinto, Bernardo I; García, Isaac E; Pupo, Amaury; Retamal, Mauricio A; Martínez, Agustín D; Latorre, Ramón; González, Carlos

2016-07-22

Connexins (Cxs) are a family of membrane-spanning proteins that form gap junction channels and hemichannels. Connexin-based channels exhibit two distinct voltage-dependent gating mechanisms termed slow and fast gating. Residues located at the C terminus of the first transmembrane segment (TM-1) are important structural components of the slow gate. Here, we determined the role of the charged residues at the end of TM-1 in voltage sensing in Cx26, Cx46, and Cx50. Conductance/voltage curves obtained from tail currents together with kinetics analysis reveal that the fast and slow gates of Cx26 involves the movement of two and four charges across the electric field, respectively. Primary sequence alignment of different Cxs shows the presence of well conserved glutamate residues in the C terminus of TM-1; only Cx26 contains a lysine in that position (lysine 41). Neutralization of lysine 41 in Cx26 increases the voltage dependence of the slow gate. Swapping of lysine 41 with glutamate 42 maintains the voltage dependence. In Cx46, neutralization of negative charges or addition of a positive charge in the Cx26 equivalent region reduced the slow gate voltage dependence. In Cx50, the addition of a glutamate in the same region decreased the voltage dependence, and the neutralization of a negative charge increased it. These results indicate that the charges at the end of TM-1 are part of the slow gate voltage sensor in Cxs. The fact that Cx42, which has no charge in this region, still presents voltage-dependent slow gating suggests that charges still unidentified also contribute to the slow gate voltage sensitivity. © 2016 by The American Society for Biochemistry and Molecular Biology, Inc.

Charged Residues at the First Transmembrane Region Contribute to the Voltage Dependence of the Slow Gate of Connexins*

PubMed Central

Pinto, Bernardo I.; García, Isaac E.; Pupo, Amaury; Retamal, Mauricio A.; Martínez, Agustín D.; Latorre, Ramón; González, Carlos

2016-01-01

Connexins (Cxs) are a family of membrane-spanning proteins that form gap junction channels and hemichannels. Connexin-based channels exhibit two distinct voltage-dependent gating mechanisms termed slow and fast gating. Residues located at the C terminus of the first transmembrane segment (TM-1) are important structural components of the slow gate. Here, we determined the role of the charged residues at the end of TM-1 in voltage sensing in Cx26, Cx46, and Cx50. Conductance/voltage curves obtained from tail currents together with kinetics analysis reveal that the fast and slow gates of Cx26 involves the movement of two and four charges across the electric field, respectively. Primary sequence alignment of different Cxs shows the presence of well conserved glutamate residues in the C terminus of TM-1; only Cx26 contains a lysine in that position (lysine 41). Neutralization of lysine 41 in Cx26 increases the voltage dependence of the slow gate. Swapping of lysine 41 with glutamate 42 maintains the voltage dependence. In Cx46, neutralization of negative charges or addition of a positive charge in the Cx26 equivalent region reduced the slow gate voltage dependence. In Cx50, the addition of a glutamate in the same region decreased the voltage dependence, and the neutralization of a negative charge increased it. These results indicate that the charges at the end of TM-1 are part of the slow gate voltage sensor in Cxs. The fact that Cx42, which has no charge in this region, still presents voltage-dependent slow gating suggests that charges still unidentified also contribute to the slow gate voltage sensitivity. PMID:27143357

Enabling fast charging - A battery technology gap assessment

NASA Astrophysics Data System (ADS)

Ahmed, Shabbir; Bloom, Ira; Jansen, Andrew N.; Tanim, Tanvir; Dufek, Eric J.; Pesaran, Ahmad; Burnham, Andrew; Carlson, Richard B.; Dias, Fernando; Hardy, Keith; Keyser, Matthew; Kreuzer, Cory; Markel, Anthony; Meintz, Andrew; Michelbacher, Christopher; Mohanpurkar, Manish; Nelson, Paul A.; Robertson, David C.; Scoffield, Don; Shirk, Matthew; Stephens, Thomas; Vijayagopal, Ram; Zhang, Jiucai

2017-11-01

The battery technology literature is reviewed, with an emphasis on key elements that limit extreme fast charging. Key gaps in existing elements of the technology are presented as well as developmental needs. Among these needs are advanced models and methods to detect and prevent lithium plating; new positive-electrode materials which are less prone to stress-induced failure; better electrode designs to accommodate very rapid diffusion in and out of the electrode; measure temperature distributions during fast charge to enable/validate models; and develop thermal management and pack designs to accommodate the higher operating voltage.

Fast, Nonspattering Inert-Gas Welding

NASA Technical Reports Server (NTRS)

Gilbert, Jeffrey L.

1991-01-01

Proposed welding technique combines best features of metal (other than tungsten)/inert-gas welding, plasma arc welding, and tungsten/inert-gas welding. Advantages include: wire fed to weld joint preheated, therefore fed at high speed without spattering; high-frequency energy does not have to be supplied to workpiece to initiate welding; size of arc gap not critical, power-supply control circuit adjusts voltage across gap to compensate for changes; only low gas-flow rate needed; welding electrode replaced easily as prefabricated assembly; external wire-feeding manipulator not needed; and welding process relatively forgiving of operator error.

Tunneling calculations for GaAs-Al(x)Ga(1-x) as graded band-gap sawtooth superlattices. Thesis

NASA Technical Reports Server (NTRS)

Forrest, Kathrine A.; Meijer, Paul H. E.

1991-01-01

Quantum mechanical tunneling calculations for sawtooth (linearly graded band-gap) and step-barrier AlGaAs superlattices were performed by means of a transfer matrix method, within the effective mass approximation. The transmission coefficient and tunneling current versus applied voltage were computed for several representative structures. Particular consideration was given to effective mass variations. The tunneling properties of step and sawtooth superlattices show some qualitative similarities. Both structures exhibit resonant tunneling, however, because they deform differently under applied fields, the J-V curves differ.

Micromirror Array Control of a Phase-Locked Laser Diode Array

DTIC Science & Technology

1995-12-01

Micromirror Intensity-Voltage Curve . From the intensity plot, maxima (Ix) and minima (IMN) are noted. If IMAX and IMn are known, A4 can be calculated for...of the micromirror array used. Mirror 9 600 500 E 400- S300- C, -0200 lOO_ 0 0 5 10 15 20 25 30 Volts Figure 3b. Mirror Deflection Curve Corresponding...AFIT/GAP/ENP/95D-2 MICROMIRROR ARRAY CONTROL OF A PHASE-LOCKED LASER DIODE ARRAY THESIS Carl J. Christensen, Captain, USAF AFIT/GAP/ENP/95D-2

Particle-in-cell modeling of gas-confined barrier discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Levko, Dmitry; Raja, Laxminarayan L.

2016-04-15

Gas-confined barrier discharge is studied using the one-dimensional Particle-in-Cell Monte Carlo Collisions model for the conditions reported by Guerra-Garcia and Martinez-Sanchez [Appl. Phys. Lett. 106, 041601 (2015)]. Depending on the applied voltage, two modes of discharge are observed. In the first mode, the discharge develops in the entire interelectrode gap. In the second mode, the discharge is ignited and develops only in the gas layer having smaller breakdown voltage. The one-dimensional model shows that for the conditions considered, there is no streamer stage of breakdown as is typical for a traditional dielectric barrier discharge.

Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films

NASA Astrophysics Data System (ADS)

Ahn, Hyung-Woo; Seok Jeong, Doo; Cheong, Byung-ki; Lee, Hosuk; Lee, Hosun; Kim, Su-dong; Shin, Sang-Yeol; Kim, Donghwan; Lee, Suyoun

2013-07-01

We investigated the effect of nitrogen (N) doping on the threshold voltage of an ovonic threshold switching device using amorphous GeSe. Using the spectroscopic ellipsometry, we found that the addition of N brought about significant changes in electronic structure of GeSe, such as the density of localized states and the band gap energy. Besides, it was observed that the characteristics of OTS devices strongly depended on the doping of N, which could be attributed to those changes in electronic structure suggesting a method to modulate the threshold voltage of the device.

Photocurrent Suppression of Transparent Organic Thin Film Transistors

NASA Astrophysics Data System (ADS)

Chuang, Chiao-Shun; Tsai, Shu-Ting; Lin, Yung-Sheng; Chen, Fang-Chung; Shieh, Hang-Ping D.

2007-12-01

Organic thin-film transistors (OTFTs) with high transmittance and low photosensitivity have been demonstrated. By using titanium dioxide nanoparticles as the additives in the polymer gate insulators, the level of device photoresponse has been reduced. The device shows simultaneously a high transparence and a minimal threshold voltage shift under white light illumination. It is inferred that the localized energy levels deep in the energy gap of pentacene behave as the recombination centers, enhancing substantially the recombination process in the conducting channel of the OTFTs. Therefore, the electron trapping is relieved and the shift of threshold voltage is reduced upon illumination.

Metal vapor arc switch electromagnetic accelerator technology

NASA Technical Reports Server (NTRS)

Mongeau, P. P.

1984-01-01

A multielectrode device housed in an insulator vacuum vessel, the metal vapor vacuum switch has high power capability and can hold off voltages up to the 100 kilovolt level. Such switches can be electronically triggered and can interrupt or commutate at a zero current crossing. The physics of arc initiation, arc conduction, and interruption are examined, including material considerations; inefficiencies; arc modes; magnetic field effects; passive and forced extinction; and voltage recovery. Heating, electrode lifetime, device configuration, and external circuit configuration are discussed. The metal vapor vacuum switch is compared with SCRs, GTOs, spark gaps, ignitrons, and mechanical breakers.

Three-electrode low pressure discharge apparatus and method for uniform ionization of gaseous media

DOEpatents

McLellan, Edward J.

1983-01-01

Uniform, transverse electrical discharges are produced in gaseous media without the necessity of switching the main discharge voltage with an external device which carries the entire discharge current. A three-electrode low pressure discharge tube is charged across its anode (1) and cathode (2) to below breakdown voltage using a dc voltage source (3). An array of resistors (4) or capacitors can be made to discharge to the wire screen anode by means of a low energy high voltage pulse circuit (5) producing sufficient preionization in the region between the anode and cathode to initiate and control the main discharge. The invention has been demonstrated to be useful as a CO.sub.2 laser oscillator and pulse-smoother. It can be reliably operated in the sealed-off mode.

Extended linear ion trap frequency standard apparatus

NASA Technical Reports Server (NTRS)

Prestage, John D. (Inventor)

1995-01-01

A linear ion trap for frequency standard applications is provided with a plurality of trapping rods equally spaced and applied quadruple rf voltages for radial confinement of atomic ions and biased level pins at each end for axial confinement of the ions. The trapping rods are divided into two linear ion trap regions by a gap in each rod in a common radial plane to provide dc discontinuity, thus dc isolating one region from the other. A first region for ion-loading and preparation fluorescence is biased with a dc voltage to transport ions into a second region for resonance frequency comparison with a local oscillator derived frequency while the second region is held at zero voltage. The dc bias voltage of the regions is reversed for transporting the ions back into the first region for fluorescence measurement. The dual mode cycle is repeated continuously for comparison and feedback control of the local oscillator derived frequency. Only the second region requires magnetic shielding for the resonance function which is sensitive to any ambient magnetic fields.

A Comparison of Two Sensors Used to Measure High-Voltage, Fast-Risetime Signals in Coaxial Cable

NASA Astrophysics Data System (ADS)

Farr, Everett G.; Atchley, Lanney M.; Ellibee, Donald E.; Carey, William J.; Altgilbers, Larry L.

We consider here two sensors that are commonly used to measure high-voltage fast-risetime signals in coaxial cable. One sensor measures the current in the cable, and is called a Current-Viewing Resistor, or CVR. In this design, the cable jacket is cut, a portion of the cable jacket is removed, and a number of resistors are inserted in parallel across the gap, thereby creating a low resistance in series with the outer cable jacket. The voltage across these resistors is proportional to the current in the coax. The second sensor measures the derivative of the voltage in the coax. It is fabricated from a "sawed-off" SMA connector that is inserted through a small hole in the cable jacket. In this paper we characterize the accuracy of both sensors when used with RG-220 cable, and we discuss the situations when one might prefer one measurement type over the other.

A compact bipolar pulse-forming network-Marx generator based on pulse transformers.

PubMed

Zhang, Huibo; Yang, Jianhua; Lin, Jiajin; Yang, Xiao

2013-11-01

A compact bipolar pulse-forming network (PFN)-Marx generator based on pulse transformers is presented in this paper. The high-voltage generator consisted of two sets of pulse transformers, 6 stages of PFNs with ceramic capacitors, a switch unit, and a matched load. The design is characterized by the bipolar pulse charging scheme and the compact structure of the PFN-Marx. The scheme of bipolar charging by pulse transformers increased the withstand voltage of the ceramic capacitors in the PFNs and decreased the number of the gas gap switches. The compact structure of the PFN-Marx was aimed at reducing the parasitic inductance in the generator. When the charging voltage on the PFNs was 35 kV, the matched resistive load of 48 Ω could deliver a high-voltage pulse with an amplitude of 100 kV. The full width at half maximum of the load pulse was 173 ns, and its rise time was less than 15 ns.

Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics

NASA Astrophysics Data System (ADS)

Wei, Xixiong; Deng, Wanling; Fang, Jielin; Ma, Xiaoyu; Huang, Junkai

2017-10-01

A physical-based straightforward extraction technique for interface and bulk density of states in metal oxide semiconductor thin film transistors (TFTs) is proposed by using the capacitance-voltage (C-V) characteristics. The interface trap density distribution with energy has been extracted from the analysis of capacitance-voltage characteristics. Using the obtained interface state distribution, the bulk trap density has been determined. With this method, for the interface trap density, it is found that deep state density nearing the mid-gap is approximately constant and tail states density increases exponentially with energy; for the bulk trap density, it is a superposition of exponential deep states and exponential tail states. The validity of the extraction is verified by comparisons with the measured current-voltage (I-V) characteristics and the simulation results by the technology computer-aided design (TCAD) model. This extraction method uses non-numerical iteration which is simple, fast and accurate. Therefore, it is very useful for TFT device characterization.

Highly improved voltage efficiency of seawater battery by use of chloride ion capturing electrode

NASA Astrophysics Data System (ADS)

Kim, Kyoungho; Hwang, Soo Min; Park, Jeong-Sun; Han, Jinhyup; Kim, Junsoo; Kim, Youngsik

2016-05-01

Cost-effective and eco-friendly battery system with high energy density is highly desirable. Herein, we report a seawater battery with a high voltage efficiency, in which a chloride ion-capturing electrode (CICE) consisting of Ag foil is utilized as the cathode. The use of Ag as the cathode leads to a sharp decrease in the voltage gaps between charge and discharge curves, based on reversible redox reaction of Ag/AgCl (at ∼2.9 V vs. Na+/Na) in a seawater catholyte during cycling. The Ag/AgCl reaction proves to be highly reversible during battery cycling. The battery employing the Ag electrode shows excellent cycling performance with a high Coulombic efficiency (98.6-98.7%) and a highly improved voltage efficiency (90.3% compared to 73% for carbonaceous cathode) during 20 cycles (total 500 h). These findings demonstrate that seawater batteries using a CICE could be used as next-generation batteries for large-scale stationary energy storage plants.

Dynamics of internal pore opening in KV channels probed by a fluorescent unnatural amino acid

PubMed Central

Kalstrup, Tanja; Blunck, Rikard

2013-01-01

Atomic-scale models on the gating mechanism of voltage-gated potassium channels (Kv) are based on linear interpolations between static structures of their initial and final state derived from crystallography and molecular dynamics simulations, and, thus, lack dynamic structural information. The lack of information on dynamics and intermediate states makes it difficult to associate the structural with the dynamic functional data obtained with electrophysiology. Although voltage-clamp fluorometry fills this gap, it is limited to sites extracellularly accessible, when the key region for gating is located at the cytosolic side of the channels. Here, we solved this problem by performing voltage-clamp fluorometry with a fluorescent unnatural amino acid. By using an orthogonal tRNA-synthetase pair, the fluorescent unnatural amino acid was incorporated in the Shaker voltage-gated potassium channel at key regions that were previously inaccessible. Thus, we defined which parts act independently and which parts act cooperatively and found pore opening to occur in two sequential transitions. PMID:23630265

Observation of X-rays from long laboratory negative discharge in STP air

NASA Astrophysics Data System (ADS)

Kochkin, Pavlo; van Deursen, A. P. J.; Ebert, Ute

2014-05-01

Pulses of x-rays emitted by lightning are one of the most intriguing among unsolved problem in physics of lightning. They have been detected from both - natural and rocket-triggered lightning. In natural lightning x-rays were detected during stepped leader process and later were associated with a single step. In triggered lighting x-rays were found to be originated from a tip of a dart leader that also possesses stepping propagation mechanism. Therefore, stepping mechanism is the key to understanding the x-ray pulses generated by lightning. Unfortunately, leader stepping mechanism itself is far from well understood. Negative long laboratory discharges also develop through a formation of a space stem/leader and they also generate bursts of x-ray radiation. In this study we investigate the development of a long negative laboratory spark in particular focusing on its x-ray emission. A 2 MV Marx generator delivers high-voltage standard lightning pulse with 1.2/50 microsec rise/fall time to a spark gap with conical electrodes. The distance between cone tips was varied between 1 m and 1.75 m. An upper voltage limit is set to about 1 MV level. The voltage is measured by capacitive high-voltage divider. Two Pearson 7427 current probes determine the currents through high-voltage and grounded electrodes. Two LaBr3 scintillator detectors were mounted in EMC-cabinets and recorded the x-rays. Picos4 Stanford Optics camera with intensified CCD is placed in 4 m distance from the spark gap and directed perpendicular to the spark plane. The camera allows us to make ns-fast images of pre-breakdown phenomena in controllable time. We discovered new details of space stem/leader formation and development in long laboratory sparks. The connection moment of positive part of the space stem/leader to negative high-voltage is accompanied by intense x-ray emission. Taking into account our previous study on positive discharge, we conclude that encounter between positive and negative streamers is the most likely mechanism responsible for the x-rays.

Colossal terahertz nonlinearity of tunneling van der Waals gap (Conference Presentation)

NASA Astrophysics Data System (ADS)

Bahk, Young-Mi; Kang, Bong Joo; Kim, Yong Seung; Kim, Joon-Yeon; Kim, Won Tae; Kim, Tae Yun; Kang, Taehee; Rhie, Ji Yeah; Han, Sanghoon; Park, Cheol-Hwan; Rotermund, Fabian; Kim, Dai-Sik

2016-09-01

We manufactured an array of three angstrom-wide, five millimeter-long van der Waals gaps of copper-graphene-copper composite, in which unprecedented nonlinearity was observed. To probe and manipulate van der Waals gaps with long wavelength electromagnetic waves such as terahertz waves, one is required to fabricate vertically oriented van der Waals gaps sandwiched between two metal planes with an infinite length in the sense of being much larger than any of the wavelengths used. By comparison with the simple vertical stacking of metal-graphene-metal structure, in our structure, background signals are completely blocked enabling all the light to squeeze through the gap without any strays. When the angstrom-sized van der Waals gaps are irradiated with intense terahertz pulses, the transient voltage across the gap reaches up to 5 V with saturation, sufficiently strong to deform the quantum barrier of angstrom gaps. The large transient potential difference across the gap facilitates electron tunneling through the quantum barrier, blocking terahertz waves completely. This negative feedback of electron tunneling leads to colossal nonlinear optical response, a 97% decrease in the normalized transmittance. Our technology for infinitely long van der Waals gaps can be utilized for other atomically thin materials than single layer graphene, enabling linear and nonlinear angstrom optics in a broad spectral range.

Improvement of band gap profile in Cu(InGa)Se{sub 2} solar cells through rapid thermal annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, D.S.; College of Mathematics and Physics, Shanghai University of Electric Power, Shanghai, 200090; Yang, J.

Highlights: • Proper RTA treatment can effectively optimize band gap profile to more expected level. • Inter-diffusion of atoms account for the improvement of the graded band gap profile. • The variation of the band gap profile created an absolute gain in the efficiency by 1.22%. - Abstract: In the paper, the effect of rapid thermal annealing on non-optimal double-graded band gap profiles was investigated by using X-ray photoelectron spectroscopy and capacitance–voltage measurement techniques. Experimental results revealed that proper rapid thermal annealing treatment can effectively improve band gap profile to more optimal level. The annealing treatment could not only reducemore » the values of front band gap and minimum band gap, but also shift the position of the minimum band gap toward front electrode and enter into space charge region. In addition, the thickness of Cu(InGa)Se{sub 2} thin film decreased by 25 nm after rapid thermal annealing treatment. All of these modifications were attributed to the inter-diffusion of atoms during thermal treatment process. Simultaneously, the variation of the band gap profile created an absolute gain in the efficiency by 1.22%, short-circuit current density by 2.16 mA/cm{sup 2} and filled factor by 3.57%.« less

Temperature and leakage aware techniques to improve cache reliability

NASA Astrophysics Data System (ADS)

Akaaboune, Adil

Decreasing power consumption in small devices such as handhelds, cell phones and high-performance processors is now one of the most critical design concerns. On-chip cache memories dominate the chip area in microprocessors and thus arises the need for power efficient cache memories. Cache is the simplest cost effective method to attain high speed memory hierarchy and, its performance is extremely critical for high speed computers. Cache is used by the microprocessor for channeling the performance gap between processor and main memory (RAM) hence the memory bandwidth is frequently a bottleneck which can affect the peak throughput significantly. In the design of any cache system, the tradeoffs of area/cost, performance, power consumption, and thermal management must be taken into consideration. Previous work has mainly concentrated on performance and area/cost constraints. More recent works have focused on low power design especially for portable devices and media-processing systems, however fewer research has been done on the relationship between heat management, Leakage power and cost per die. Lately, the focus of power dissipation in the new generations of microprocessors has shifted from dynamic power to idle power, a previously underestimated form of power loss that causes battery charge to drain and shutdown too early due the waste of energy. The problem has been aggravated by the aggressive scaling of process; device level method used originally by designers to enhance performance, conserve dissipation and reduces the sizes of digital circuits that are increasingly condensed. This dissertation studies the impact of hotspots, in the cache memory, on leakage consumption and microprocessor reliability and durability. The work will first prove that by eliminating hotspots in the cache memory, leakage power will be reduced and therefore, the reliability will be improved. The second technique studied is data quality management that improves the quality of the data stored in the cache to reduce power consumption. The initial work done on this subject focuses on the type of data that increases leakage consumption and ways to manage without impacting the performance of the microprocessor. The second phase of the project focuses on managing the data storage in different blocks of the cache to smooth the leakage power as well as dynamic power consumption. The last technique is a voltage controlled cache to reduce the leakage consumption of the cache while in execution and even in idle state. Two blocks of the 4-way set associative cache go through a voltage regulator before getting to the voltage well, and the other two are directly connected to the voltage well. The idea behind this technique is to use the replacement algorithm information to increase or decrease voltage of the two blocks depending on the need of the information stored on them.

Essential role of the A'α/Aβ gap in the N-terminal upstream of LOV2 for the blue light signaling from LOV2 to kinase in Arabidopsis photototropin1, a plant blue light receptor.

PubMed

Kashojiya, Sachiko; Okajima, Koji; Shimada, Takashi; Tokutomi, Satoru

2015-01-01

Phototropin (phot) is a blue light (BL) receptor in plants and is involved in phototropism, chloroplast movement, stomata opening, etc. A phot molecule has two photo-receptive domains named LOV (Light-Oxygen-Voltage) 1 and 2 in its N-terminal region and a serine/threonine kinase (STK) in its C-terminal region. STK activity is regulated mainly by LOV2, which has a cyclic photoreaction, including the transient formation of a flavin mononucleotide (FMN)-cysteinyl adduct (S390). One of the key events for the propagation of the BL signal from LOV2 to STK is conformational changes in a Jα-helix residing downstream of the LOV2 C-terminus. In contrast, we focused on the role of the A'α-helix, which is located upstream of the LOV2 N-terminus and interacts with the Jα-helix. Using LOV2-STK polypeptides from Arabidopsis thaliana phot1, we found that truncation of the A'α-helix and amino acid substitutions at Glu474 and Lys475 in the gap between the A'α and the Aβ strand of LOV2 (A'α/Aβ gap) to Ala impaired the BL-induced activation of the STK, although they did not affect S390 formation. Trypsin digested the LOV2-STK at Lys603 and Lys475 in a light-dependent manner indicating BL-induced structural changes in both the Jα-helix and the gap. The digestion at Lys603 is faster than at Lys475. These BL-induced structural changes were observed with the Glu474Ala and the Lys475Ala substitutes, indicating that the BL signal reached the Jα-helix as well as the A'α/Aβ gap but could not activate STK. The amino acid residues, Glu474 and Lys475, in the gap are conserved among the phots of higher plants and may act as a joint to connect the structural changes in the Jα-helix with the activation of STK.

Analysis of Pull-In Instability of Geometrically Nonlinear Microbeam Using Radial Basis Artificial Neural Network Based on Couple Stress Theory

PubMed Central

Heidari, Mohammad; Heidari, Ali; Homaei, Hadi

2014-01-01

The static pull-in instability of beam-type microelectromechanical systems (MEMS) is theoretically investigated. Two engineering cases including cantilever and double cantilever microbeam are considered. Considering the midplane stretching as the source of the nonlinearity in the beam behavior, a nonlinear size-dependent Euler-Bernoulli beam model is used based on a modified couple stress theory, capable of capturing the size effect. By selecting a range of geometric parameters such as beam lengths, width, thickness, gaps, and size effect, we identify the static pull-in instability voltage. A MAPLE package is employed to solve the nonlinear differential governing equations to obtain the static pull-in instability voltage of microbeams. Radial basis function artificial neural network with two functions has been used for modeling the static pull-in instability of microcantilever beam. The network has four inputs of length, width, gap, and the ratio of height to scale parameter of beam as the independent process variables, and the output is static pull-in voltage of microbeam. Numerical data, employed for training the network, and capabilities of the model have been verified in predicting the pull-in instability behavior. The output obtained from neural network model is compared with numerical results, and the amount of relative error has been calculated. Based on this verification error, it is shown that the radial basis function of neural network has the average error of 4.55% in predicting pull-in voltage of cantilever microbeam. Further analysis of pull-in instability of beam under different input conditions has been investigated and comparison results of modeling with numerical considerations shows a good agreement, which also proves the feasibility and effectiveness of the adopted approach. The results reveal significant influences of size effect and geometric parameters on the static pull-in instability voltage of MEMS. PMID:24860602

Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe1.64Ga0.36O3 oxide

NASA Astrophysics Data System (ADS)

Bhowmik, R. N.; Vijayasri, G.

2015-06-01

We have studied current-voltage (I-V) characteristics of α-Fe1.64Ga0.36O3, a typical canted ferromagnetic semiconductor. The sample showed a transformation of the I-V curves from linear to non-linear character with the increase of bias voltage. The I-V curves showed irreversible features with hysteresis loop and bi-stable electronic states for up and down modes of voltage sweep. We report positive magnetoresistance and magnetic field induced negative differential resistance as the first time observed phenomena in metal doped hematite system. The magnitudes of critical voltage at which I-V curve showed peak and corresponding peak current are affected by magnetic field cycling. The shift of the peak voltage with magnetic field showed a step-wise jump between two discrete voltage levels with least gap (ΔVP) 0.345(± 0.001) V. The magnetic spin dependent electronic charge transport in this new class of magnetic semiconductor opens a wide scope for tuning large electroresistance (˜500-700%), magnetoresistance (70-135 %) and charge-spin dependent conductivity under suitable control of electric and magnetic fields. The electric and magnetic field controlled charge-spin transport is interesting for applications of the magnetic materials in spintronics, e.g., magnetic sensor, memory devices and digital switching.

Tunable negative differential resistance in planar graphene superlattice resonant tunneling diode

NASA Astrophysics Data System (ADS)

Sattari-Esfahlan, S. M.; Fouladi-Oskuei, J.; Shojaei, S.

2017-04-01

Here, we study the negative differential resistance (NDR) of Dirac electrons in biased planar graphene superlattice (PGSL) and investigate the transport characteristics by adopted transfer matrix method within Landauer-Buttiker formalism. Our model device is based on one-dimensional Kronig-Penney type electrostatic potential in monolayer graphene deposited on a substrate, where the bias voltage is applied by two electrodes in the left and right. At Low bias voltages, we found that NDR appears due to breaking of minibands to Wannier-Stark ladders (WSLs). At the critical bias voltage, delocalization appeared by WS states leads to tunneling peak current in current-voltage (I-V) characteristics. With increasing bias voltage, crossing of rungs from various WSL results in multi-peak NDR. The results demonstrate that the structure parameters like barrier/well thickness and barrier height have remarkable effect on I-V characteristics of PGSL. In addition, Dirac gap enhances peak to valley (PVR) value due to suppressing Klein tunneling. Our results show that the tunable PVR in PGSL resonant tunneling diode can be achievable by structure parameters engineering. NDR at ultra-low bias voltages, such as 100 mV, with giant PVR of 20 is obtained. In our device, the multiple same NDR peaks with ultra-low bias voltage provide promising prospect for multi-valued memories and the low power nanoelectronic tunneling devices.

Reduced voltage losses yield 10% efficient fullerene free organic solar cells with >1 V open circuit voltages.

PubMed

Baran, D; Kirchartz, T; Wheeler, S; Dimitrov, S; Abdelsamie, M; Gorman, J; Ashraf, R S; Holliday, S; Wadsworth, A; Gasparini, N; Kaienburg, P; Yan, H; Amassian, A; Brabec, C J; Durrant, J R; McCulloch, I

2016-12-01

Optimization of the energy levels at the donor-acceptor interface of organic solar cells has driven their efficiencies to above 10%. However, further improvements towards efficiencies comparable with inorganic solar cells remain challenging because of high recombination losses, which empirically limit the open-circuit voltage ( V oc ) to typically less than 1 V. Here we show that this empirical limit can be overcome using non-fullerene acceptors blended with the low band gap polymer PffBT4T-2DT leading to efficiencies approaching 10% (9.95%). We achieve V oc up to 1.12 V, which corresponds to a loss of only E g / q - V oc = 0.5 ± 0.01 V between the optical bandgap E g of the polymer and V oc . This high V oc is shown to be associated with the achievement of remarkably low non-geminate and non-radiative recombination losses in these devices. Suppression of non-radiative recombination implies high external electroluminescence quantum efficiencies which are orders of magnitude higher than those of equivalent devices employing fullerene acceptors. Using the balance between reduced recombination losses and good photocurrent generation efficiencies achieved experimentally as a baseline for simulations of the efficiency potential of organic solar cells, we estimate that efficiencies of up to 20% are achievable if band gaps and fill factors are further optimized.

Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method

NASA Astrophysics Data System (ADS)

Park, Junghak; Hur, Ji-Hyun; Jeon, Sanghun

2018-04-01

The threshold voltage instabilities and huge hysteresis of MoS2 thin film transistors (TFTs) have raised concerns about their practical applicability in next-generation switching devices. These behaviors are associated with charge trapping, which stems from tunneling to the adjacent trap site, interfacial redox reaction and interface and/or bulk trap states. In this report, we present quantitative analysis on the electron charge trapping mechanism of MoS2 TFT by fast pulse I-V method and the space charge limited current (SCLC) measurement. By adopting the fast pulse I-V method, we were able to obtain effective mobility. In addition, the origin of the trap states was identified by disassembling the sub-gap states into interface trap and bulk trap states by simple extraction analysis. These measurement methods and analyses enable not only quantitative extraction of various traps but also an understanding of the charge transport mechanism in MoS2 TFTs. The fast I-V data and SCLC data obtained under various measurement temperatures and ambient show that electron transport to neighboring trap sites by tunneling is the main charge trapping mechanism in thin-MoS2 TFTs. This implies that interfacial traps account for most of the total sub-gap states while the bulk trap contribution is negligible, at approximately 0.40% and 0.26% in air and vacuum ambient, respectively. Thus, control of the interface trap states is crucial to further improve the performance of devices with thin channels.

Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method.

PubMed

Park, Junghak; Hur, Ji-Hyun; Jeon, Sanghun

2018-04-27

The threshold voltage instabilities and huge hysteresis of MoS 2 thin film transistors (TFTs) have raised concerns about their practical applicability in next-generation switching devices. These behaviors are associated with charge trapping, which stems from tunneling to the adjacent trap site, interfacial redox reaction and interface and/or bulk trap states. In this report, we present quantitative analysis on the electron charge trapping mechanism of MoS 2 TFT by fast pulse I-V method and the space charge limited current (SCLC) measurement. By adopting the fast pulse I-V method, we were able to obtain effective mobility. In addition, the origin of the trap states was identified by disassembling the sub-gap states into interface trap and bulk trap states by simple extraction analysis. These measurement methods and analyses enable not only quantitative extraction of various traps but also an understanding of the charge transport mechanism in MoS 2 TFTs. The fast I-V data and SCLC data obtained under various measurement temperatures and ambient show that electron transport to neighboring trap sites by tunneling is the main charge trapping mechanism in thin-MoS 2 TFTs. This implies that interfacial traps account for most of the total sub-gap states while the bulk trap contribution is negligible, at approximately 0.40% and 0.26% in air and vacuum ambient, respectively. Thus, control of the interface trap states is crucial to further improve the performance of devices with thin channels.

Simulation of the Plasma Afterglow in the Discharge Gap of a Subnanosecond Switch Based on an Open Discharge in Helium

NASA Astrophysics Data System (ADS)

Alexandrov, A. L.; Schweigert, I. V.

2018-05-01

The phenomenon of subnanosecond electrical breakdown in a strong electric field observed in an open discharge in helium at pressures of 6-20 Torr can be used to create ultrafast plasma switches triggering into a conducting state for a time shorter than 1 ns. To evaluate the possible repetition rate of such a subnanosecond switch, it is interesting to study the decay dynamics of the plasma remaining in the discharge gap after ultrafast breakdown. In this paper, a kinetic model based on the particle-in-cell Monte Carlo collision method is used to study the dynamics of the plasma afterglow in the discharge gap of a subnanosecond switch operating with helium at a pressure of 6 Torr. The simulation results show that the radiative, collisional-radiative, and three-body collision recombination mechanisms significantly contribute to the afterglow decay only while the plasma density remains higher than 1012 cm-3; the main mechanism of the further plasma decay is diffusion of plasma particles onto the wall. Therefore, the effect of recombination in the plasma bulk is observed only during the first 10-20 μs of the afterglow. Over nearly the same time, plasma electrons become thermalized. The afterglow time can be substantially reduced by applying a positive voltage U c to the cathode. Since diffusive losses are limited by the ion mobility, the additional ion drift toward the wall significantly accelerates plasma decay. As U c increases from 0 to +500 V, the characteristic time of plasma decay is reduced from 35 to 10 μs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Lijun; Deng, Jie; Zhou, Xin

In this paper, cathode spot plasma jet (CSPJ) rotation and cathode spots behavior subjected to two kinds of large diameter axial magnetic field (AMF) electrode (cup-shaped and coil-shaped) are studied and analyzed based on experiments. The influence of gap distances on the CSPJ rotational behavior is analyzed. Experimental results show that CSPJ rotational phenomena extensively exist in the vacuum interrupters, and CSPJ rotational direction is along the direction of composite magnetic field (mainly the combination of the axial and azimuthal components). For coil-shaped and cup-shaped AMF electrodes, the rotational or inclination phenomena before the current peak value are much moremore » significant than that after current peak value (for the same arc current), which is related to the larger ratio of azimuthal magnetic field B{sub t} and AMF B{sub z} (B{sub t}/B{sub z}). With the increase of the gap distance, the AMF strength decreases, when the arc current is kept as constant, the azimuthal magnetic field is kept invariable, the ratio between azimuthal magnetic field and AMF is increased, which results in the increase of rotational effect. For cathode spots motion, compared with cup-shaped electrode, coil-shaped electrode has the inverse AMF direction. The Robson drift direction of cathode spots of coil-shaped electrode is opposite to that of cup-shaped electrode. With the increase of gap distance, the Robson angle is decreased, which is associated with the reduced AMF strength. Erosion imprints of anode and cathode are also related to the CSPJ rotational phenomena and cathode spots behavior. The noise of arc voltage in the initial arcing stage is related to the weaker AMF.« less

Optically-initiated silicon carbide high voltage switch with contoured-profile electrode interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sullivan, James S.; Hawkins, Steven A.

An improved photoconductive switch having a SiC or other wide band gap substrate material with opposing contoured profile cavities which have a contoured profile selected from one of Rogowski, Bruce, Chang, Harrison, and Ernst profiles, and two electrodes with matching contoured-profile convex interface surfaces.

Influence of adhesive rough surface contact on microswitches

NASA Astrophysics Data System (ADS)

Wu, Ling; Rochus, V.; Noels, L.; Golinval, J. C.

2009-12-01

Stiction is a major failure mode in microelectromechanical systems (MEMS). Undesirable stiction, which results from contact between surfaces, threatens the reliability of MEMS severely as it breaks the actuation function of MEMS switches, for example. Although it may be possible to avoid stiction by increasing restoring forces using high spring constants, it follows that the actuation voltage has also to be increased significantly, which reduces the efficiency. In our research, an electrostatic-structural analysis is performed to estimate the proper design range of the equivalent spring constant, which is the main factor of restoring force in MEMS switches. The upper limit of equivalent spring constant is evaluated based on the initial gap width, the dielectric thickness, and the expected actuation voltage. The lower limit is assessed on the value of adhesive forces between the two contacting rough surfaces. The MEMS devices studied here are assumed to work in a dry environment. In these operating conditions only the van der Waals forces have to be considered for adhesion. A statistical model is used to simulate the rough surface, and the Maugis's model is combined with Kim's expansion to calculate adhesive forces. In the resulting model, the critical value of the spring stiffness depends on the material and surface properties, such as the elastic modulus, surface energy, and surface roughness. The aim of this research is to propose simple rules for design purposes.

Electrical and spectroscopic analysis of mono- and multi-tip pulsed corona discharges in air at atmospheric pressure

NASA Astrophysics Data System (ADS)

Mraihi, A.; Merbahi, N.; Yousfi, M.; Abahazem, A.; Eichwald, O.

2011-12-01

This work is devoted to the analysis of experimental results obtained in dry air at atmospheric pressure in a positive point-to-plane corona discharge under a pulsed applied voltage in the cases of anodic mono- and multi-tips. In the mono-tip case, the peak corona current is analysed as a function of several experimental parameters such as magnitude, frequency and duration of pulsed voltage and gap distance. The variation of the corona discharge current is correlated with the ozone production. Then in the multi-tip case, the electrical behaviour is analysed as a function of the distance between two contiguous tips and the tip number in order to highlight the region of creation active species for the lowest dissipated power. Intensified charge-coupled device pictures and electric field calculations as a function of inter-tip distance are performed to analyse the mutual effect between two contiguous tips. The optical emission spectra are measured in the UV-visible-NIR wavelength range between 200 nm and 800 nm, in order to identify the main excited species formed in an air corona discharge such as the usual first and second positive systems with first negative systems of molecular nitrogen. The identification of atomic species (O triplet and N) and the quenching of NOγ emission bands are also emphasized.

Enhancing catalytic activity by narrowing local energy gaps--X-ray studies of a manganese water oxidation catalyst.

PubMed

Xiao, Jie; Khan, Munirah; Singh, Archana; Suljoti, Edlira; Spiccia, Leone; Aziz, Emad F

2015-03-01

Changes in the local electronic structure of the Mn 3d orbitals of a Mn catalyst derived from a dinuclear Mn(III) complex during the water oxidation cycle were investigated ex situ by X-ray absorption spectroscopy (XAS) and resonant inelastic X-ray scattering (RIXS) analyses. Detailed information about the Mn 3d orbitals, especially the local HOMO-LUMO gap on Mn sites revealed by RIXS analyses, indicated that the enhancement in catalytic activity (water oxidation) originated from the narrowing of the local HOMO-LUMO gap when electrical voltage and visible light illumination were applied simultaneously to the Mn catalytic system. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The role of a conserved proline residue in mediating conformational changes associated with voltage gating of Cx32 gap junctions.

PubMed Central

Ri, Y; Ballesteros, J A; Abrams, C K; Oh, S; Verselis, V K; Weinstein, H; Bargiello, T A

1999-01-01

We have explored the role of a proline residue located at position 87 in the second transmembrane segment (TM2) of gap junctions in the mechanism of voltage-dependent gating of connexin32 (Cx32). Substitution of this proline (denoted Cx32P87) with residues G, A, or V affects channel function in a progressive manner consistent with the expectation that a proline kink (PK) motif exists in the second transmembrane segment (TM2) of this connexin. Mutations of the preceding threonine residue T86 to S, A, C, V, N, or L shift the conductance-voltage relation of wild-type Cx32, such that the mutated channels close at smaller transjunctional voltages. The observed shift in voltage dependence is consistent with a reduction in the open probability of the mutant hemichannels at a transjunctional voltage (Vj) of 0 mV. In both cases in which kinetics were examined, the time constants for reaching steady state were faster for T86N and T86A than for wild type at comparable voltages, suggesting that the T86 mutations cause the energetic destabilization of the open state relative to the other states of the channel protein. The structural underpinnings of the observed effects were explored with Monte Carlo simulations. The conformational space of TM2 helices was found to differ for the T86A, V, N, and L mutants, which produce a less bent helix ( approximately 20 degrees bend angle) compared to the wild type, which has a approximately 37 degrees bend angle. The greater bend angle of the wild-type helix reflects the propensity of the T86 residue to hydrogen bond with the backbone carbonyl of amino acid residue I82. The relative differences in propensity for hydrogen bonding of the mutants relative to the wild-type threonine residue in the constructs we studied (T86A, V, N, L, S, and C) correlate with the shift in the conductance-voltage relation observed for T86 mutations. The data are consistent with a structural model in which the open conformation of the Cx32 channel corresponds to a more bent TM2 helix, and the closed conformation corresponds to a less bent helix. We propose that the modulation of the hydrogen-bonding potential of the T86 residue alters the bend angle of the PK motif and mediates conformational changes between open and closed channel states. PMID:10354417

KSI's Cross Insulated Core Transformer Technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Uhmeyer, Uwe

2009-08-04

Cross Insulated Core Transformer (CCT) technology improves on Insulated Core Transformer (ICT) implementations. ICT systems are widely used in very high voltage, high power, power supply systems. In an ICT transformer ferrite core sections are insulated from their neighboring ferrite cores. Flux leakage is present at each of these insulated gaps. The flux loss is raised to the power of stages in the ICT design causing output voltage efficiency to taper off with increasing stages. KSI's CCT technology utilizes a patented technique to compensate the flux loss at each stage of an ICT system. Design equations to calculate the fluxmore » compensation capacitor value are presented. CCT provides corona free operation of the HV stack. KSI's CCT based High Voltage power supply systems offer high efficiency operation, high frequency switching, low stored energy and smaller size over comparable ICT systems.« less

Discharge reliability in ablative pulsed plasma thrusters

NASA Astrophysics Data System (ADS)

Wu, Zhiwen; Sun, Guorui; Yuan, Shiyue; Huang, Tiankun; Liu, Xiangyang; Xie, Kan; Wang, Ningfei

2017-08-01

Discharge reliability is typically neglected in low-ignition-cycle ablative pulsed plasma thrusters (APPTs). In this study, the discharge reliability of an APPT is assessed analytically and experimentally. The goals of this study are to better understand the ignition characteristics and to assess the accuracy of the analytical method. For each of six sets of operating conditions, 500 tests of a parallel-plate APPT with a coaxial semiconductor spark plug are conducted. The discharge voltage and current are measured with a high-voltage probe and a Rogowski coil, respectively, to determine whether the discharge is successful. Generally, the discharge success rate increases as the discharge voltage increases, and it decreases as the electrode gap and the number of ignitions increases. The theoretical analysis and the experimental results are reasonably consistent. This approach provides a reference for designing APPTs and improving their stability.

Influence of bias voltage on structural and optical properties of TiN{sub x} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Omveer, E-mail: poonia.omveer@gmail.com; Dahiya, Raj P.; Deenbandhu Chhotu Ram University of Science and Technology, Murthal – 131039

In the present work, Ti thin films were deposited on Si substrate using DC sputtering technique. Indigenous hot cathode arc discharge plasma system was used for nitriding over these samples, where the plasma parameters and work piece can be controlled independently. A mixture of H{sub 2} and N{sub 2} gases (in the ratio of 80:20) was supplied into the plasma chamber. The effect of bias voltage on the crystal structure, morphology and optical properties was investigated by employing various physical techniques such as X-ray Diffraction, Atomic Force Microscopy and UV-Vis spectrometry. It was found that bias voltage affects largely themore » crystal structure and band gap which in turn is responsible for the modifications in optical properties of the deposited films.« less

Point-contact tunneling in monophasic and polyphasic Y-Ba-Cu-O samples: Experiment and model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gonnelli, R.S.; Andreone, D.; Lacquaniti, V.

1989-02-01

Tunneling experiments using large-area point-contact structures have been performed on several monophasic polycrystalline Ba/sub 2/Cu/sub 3/O/sub 7-//sub delta/ samples and on polyphasic samples containing, mixed with the previous superconducting phase, also about 11% of the so-called green phase (BaY/sub 2/CuO/sub 5/). Both niobium and Y-Ba-Cu-O tips were used as counterelectrodes and measurements were made at 4.2 and 77 K. Results obtained at different experimental conditions show great reproducibility indicating the presence of the gap voltage at about 20 mV in the dynamic resistance curves. A phenomenological model was then developed to interpret in a quantitative way our data by meansmore » of a decomposition of the experimental conductance into a background component and a superconducting-tunneling component. The former results essentially in a parabolic contribution versus the bias voltage typical of a tunneling between normallike junction electrodes while the latter component is smeared out in voltage by a large amount of broadening. Using the model in a least-squares fit of the experimental data of Nb/Y-Ba-Cu-O junctions, values V/sub G/ = 21.3 +- 0.8 mV and V/sub G/ = 22.0 +- 0.6 mV for the voltage gaps at 4.2 K of monophasic and polyphasic materials, respectively, have been determined. These results have been well confirmed by measurements on Y-Ba-Cu-O/Y-Ba-Cu-O junctions while, at 77 K, there are no indications of a superconducting tunneling. We obtained also the parameters of the background conductance, which indicates the presence of a nonsuperconducting layer at the surface of the material.« less

Rotor apparatus for high strength undiffused brushless electric machine

DOEpatents

Hsu, John S [Oak Ridge, TN

2006-01-24

A radial gap brushless electric machine (30) having a stator (31) and a rotor (32) and a main air gap (34) also has at least one stationary excitation coil (35a, 36a) separated from the rotor (32) by a secondary air gap (35e, 35f, 36e, 36f) so as to induce a secondary flux in the rotor (32) which controls a resultant flux in the main air gap (34). Permanent magnetic (PM) material (38) is disposed in spaces between the rotor pole portions (39) to inhibit the second flux from leaking from the pole portions (39) prior to reaching the main air gap (34). By selecting the direction of current in the stationary excitation coil (35a, 36a) both flux enhancement and flux weakening are provided for the main air gap (34). Improvements of a laminated rotor, an end pole structure, and an arrangement of the PM elements for providing an arrangement of the flux paths from the auxiliary field coil assemblies are also disclosed.

A new infusion pathway intactness monitoring system.

PubMed

Ogawa, Hidekuni; Yonezawa, Yoshiharu; Maki, Hiromichi; Ninomiya, Ishio; Sata, Koji; Hamada, Shingo; Caldwell, W Morton

2006-01-01

A new infusion pathway monitoring system has been developed for hospital and home use. The system consists of linear integrated circuits and a low-power 8-bit single chip microcomputer which constantly monitors the infusion pathway intactness. An AC (alternating current) voltage is induced on the patient's body by electrostatic coupling from the normal 100 volt, 60 Hz AC power line wiring field in the patient's room. The induced AC voltage can be recorded by a main electrode wrapped around the infusion polyvinyl chloride tube. A reference electrode is wrapped on the electrode to monitor the AC voltage around the main electrode. If the injection needle or infusion tube becomes detached, then the system detects changes in the induced AC voltages and alerts the nursing station, via the nurse call system or PHS (personal handy phone system).

Three-electrode low pressure discharge apparatus and method for uniform ionization of gaseous media. [CO/sub 2/ laser oscillator and pulse smoother

DOEpatents

McLellan, E.J.

1980-10-17

Uniform, transverse electrical discharges are produced in gaseous media without the necessity of switching the main discharge voltage with an external device which carries the entire discharge current. A three-electrode low pressure discharge tube is charged across its anode and cathode to below breakdown voltage using a dc voltage source. An array of resistors or capacitors can be made to discharge to the wire screen anode by means of a low energy high voltage pulse circuit producing sufficient preionization in the region between the anode and cathode to initiate and control the main discharge. The invention has been demonstrated to be useful as a CO/sub 2/ laser oscillator and pulse-smoother. It can be reliably operated in the sealed-off mode.

InGaP Heterojunction Barrier Solar Cells

NASA Technical Reports Server (NTRS)

Welser, Roger E. (Inventor)

2014-01-01

A new solar cell structure called a heterojunction barrier solar cell is described. As with previously reported quantum-well and quantum-dot solar cell structures, a layer of narrow band-gap material, such as GaAs or indium-rich InGaP, is inserted into the depletion region of a wide band-gap PN junction. Rather than being thin, however, the layer of narrow band-gap material is about 400-430 nm wide and forms a single, ultrawide well in the depletion region. Thin (e.g., 20-50 nm), wide band-gap InGaP barrier layers in the depletion region reduce the diode dark current. Engineering the electric field and barrier profile of the absorber layer, barrier layer, and p-type layer of the PN junction maximizes photogenerated carrier escape. This new twist on nanostructured solar cell design allows the separate optimization of current and voltage to maximize conversion efficiency.

Results Of Insulation Resistance Between Solar Cell String Gaps Without RTV Adhesive Grout After Electrostatic Discharge Tests With Cover Glass Flashover

NASA Astrophysics Data System (ADS)

Hoang, Bao; Wong, Frankie; Redick, Tod; Masui, Hirokazu; Endo, Taishi; Toyoda, Kazuhiro; Cho, Mengu

2011-10-01

A series of electrostatic discharge (ESD) tests was performed on solar array test coupons consisting of Advanced Triple Junction InGaP2/InGaAs/Ge solar cells. The motivation for these tests was to evaluate the effects of ESD on solar array design without room temperature vulcanized (RTV) adhesive grout between the string-to-string parallel gaps. To investigate the threshold of permanently sustained secondary arcs, various combinations of gap width, load voltage and string current were tested in a vacuum chamber equipped with an electron beam gun. This ESD test program included the ESD test circuit with simulated panel coverglass flashover. Although ESD events did not result in permanent sustained arcs, the insulation resistance between strings was found to decrease as the number of secondary arcs accumulated in the gap.

Perovskite-perovskite tandem photovoltaics with optimized band gaps

NASA Astrophysics Data System (ADS)

Eperon, Giles E.; Leijtens, Tomas; Bush, Kevin A.; Prasanna, Rohit; Green, Thomas; Wang, Jacob Tse-Wei; McMeekin, David P.; Volonakis, George; Milot, Rebecca L.; May, Richard; Palmstrom, Axel; Slotcavage, Daniel J.; Belisle, Rebecca A.; Patel, Jay B.; Parrott, Elizabeth S.; Sutton, Rebecca J.; Ma, Wen; Moghadam, Farhad; Conings, Bert; Babayigit, Aslihan; Boyen, Hans-Gerd; Bent, Stacey; Giustino, Feliciano; Herz, Laura M.; Johnston, Michael B.; McGehee, Michael D.; Snaith, Henry J.

2016-11-01

We demonstrate four- and two-terminal perovskite-perovskite tandem solar cells with ideally matched band gaps. We develop an infrared-absorbing 1.2-electron volt band-gap perovskite, FA0.75Cs0.25Sn0.5Pb0.5I3, that can deliver 14.8% efficiency. By combining this material with a wider-band gap FA0.83Cs0.17Pb(I0.5Br0.5)3 material, we achieve monolithic two-terminal tandem efficiencies of 17.0% with >1.65-volt open-circuit voltage. We also make mechanically stacked four-terminal tandem cells and obtain 20.3% efficiency. Notably, we find that our infrared-absorbing perovskite cells exhibit excellent thermal and atmospheric stability, not previously achieved for Sn-based perovskites. This device architecture and materials set will enable “all-perovskite” thin-film solar cells to reach the highest efficiencies in the long term at the lowest costs.

Current saturation and voltage gain in bilayer graphene field effect transistors.

PubMed

Szafranek, B N; Fiori, G; Schall, D; Neumaier, D; Kurz, H

2012-03-14

The emergence of graphene with its unique electrical properties has triggered hopes in the electronic devices community regarding its exploitation as a channel material in field effect transistors. Graphene is especially promising for devices working at frequencies in the 100 GHz range. So far, graphene field effect transistors (GFETs) have shown cutoff frequencies up to 300 GHz, while exhibiting poor voltage gains, another important figure of merit for analog high frequency applications. In the present work, we show that the voltage gain of GFETs can be improved significantly by using bilayer graphene, where a band gap is introduced through a vertical electric displacement field. At a displacement field of -1.7 V/nm the bilayer GFETs exhibit an intrinsic voltage gain up to 35, a factor of 6 higher than the voltage gain in corresponding monolayer GFETs. The transconductance, which limits the cutoff frequency of a transistor, is not degraded by the displacement field and is similar in both monolayer and bilayer GFETs. Using numerical simulations based on an atomistic p(z) tight-binding Hamiltonian we demonstrate that this approach can be extended to sub-100 nm gate lengths. © 2012 American Chemical Society

Development of design technique for vacuum insulation in large size multi-aperture multi-grid accelerator for nuclear fusion.

PubMed

Kojima, A; Hanada, M; Tobari, H; Nishikiori, R; Hiratsuka, J; Kashiwagi, M; Umeda, N; Yoshida, M; Ichikawa, M; Watanabe, K; Yamano, Y; Grisham, L R

2016-02-01

Design techniques for the vacuum insulation have been developed in order to realize a reliable voltage holding capability of multi-aperture multi-grid (MAMuG) accelerators for fusion application. In this method, the nested multi-stage configuration of the MAMuG accelerator can be uniquely designed to satisfy the target voltage within given boundary conditions. The evaluation of the voltage holding capabilities of each acceleration stages was based on the previous experimental results about the area effect and the multi-aperture effect. Since the multi-grid effect was found to be the extension of the area effect by the total facing area this time, the total voltage holding capability of the multi-stage can be estimated from that per single stage by assuming the stage with the highest electric field, the total facing area, and the total apertures. By applying these consideration, the analysis on the 3-stage MAMuG accelerator for JT-60SA agreed well with the past gap-scan experiments with an accuracy of less than 10% variation, which demonstrated the high reliability to design MAMuG accelerators and also multi-stage high voltage bushings.

Bioelectrical coupling in multicellular domains regulated by gap junctions: A conceptual approach.

PubMed

Cervera, Javier; Pietak, Alexis; Levin, Michael; Mafe, Salvador

2018-04-21

We review the basic concepts involved in bioelectrically-coupled multicellular domains, focusing on the role of membrane potentials (V mem ). In the first model, single-cell V mem is modulated by two generic polarizing and depolarizing ion channels, while intercellular coupling is implemented via voltage-gated gap junctions. Biochemical and bioelectrical signals are integrated via a feedback loop between V mem and the transcription and translation of a protein forming an ion channel. The effective rate constants depend on the single-cell V mem because these potentials modulate the local concentrations of signaling molecules and ions. This electrochemically-based idealization of the complex biophysical problem suggests that the spatio-temporal map of single-cell potentials can influence downstream patterning processes by means of the voltage-gated gap junction interconnectivity, much as in the case of electronic devices where the control of electric potentials and currents allows the local modulation of the circuitry to achieve full functionality. An alternative theoretical approach, the BioElectrical Tissue Simulation Engine (BETSE), is also presented. The BETSE modeling environment utilizes finite volume techniques to simulate bioelectric states from the perspective of ion concentrations and fluxes. This model has been successfully applied to make predictions and explain experimental observations in a variety of embryonic, regenerative, and oncogenic contexts. Copyright © 2018 Elsevier B.V. All rights reserved.

X-ray emissions from centimeter-long streamer corona discharges

NASA Astrophysics Data System (ADS)

da Silva, C. L.; Millan, R. M.; McGaw, D. G.; Yu, C. T.; Putter, A. S.; Labelle, J. W.; Dwyer, J. R.

2017-12-01

In this work we provide extensive evidence that runaway electron acceleration and subsequent bremsstrahlung X-ray emission are a common feature in electrical discharges of negative polarity. They can be easily detected at voltages as low as 100 kV, indicating that all negative lightning could potentially produce runaway electrons. We show that centimeter-long streamer corona discharges produce bursts of X-ray radiation that are emitted by a source that is highly compact in space and time. Therefore, the emitted X-ray photons arrive together at the detector and pile up. Median burst energies vary between 33-96% of the total 100 keV available electrostatic energy that an electron can acquire in the gap. We present detailed statistical analysis of 5000+ discharges, showing that X-rays are observed in as many as 60% of the triggers, depending on the configuration. X-ray detection is more frequent when: the streamer corona discharge is not followed by a spark, the detector is oriented perpendicular to the gap, and a thicker anode is used. We show that for an 8-cm-long gap, X-rays are produced when runaway electrons hit the anode, and that the runaway electron acceleration is not correlated with streamer collisions, as inferred in meter-long discharges. The described experiment is a promising way for measuring the runaway electron distribution very close to the source and its dependence on the applied voltage.

New Material Transistor with Record-High Field-Effect Mobility among Wide-Band-Gap Semiconductors.

PubMed

Shih, Cheng Wei; Chin, Albert

2016-08-03

At an ultrathin 5 nm, we report a new high-mobility tin oxide (SnO2) metal-oxide-semiconductor field-effect transistor (MOSFET) exhibiting extremely high field-effect mobility values of 279 and 255 cm(2)/V-s at 145 and 205 °C, respectively. These values are the highest reported mobility values among all wide-band-gap semiconductors of GaN, SiC, and metal-oxide MOSFETs, and they also exceed those of silicon devices at the aforementioned elevated temperatures. For the first time among existing semiconductor transistors, a new device physical phenomenon of a higher mobility value was measured at 45-205 °C than at 25 °C, which is due to the lower optical phonon scattering by the large SnO2 phonon energy. Moreover, the high on-current/off-current of 4 × 10(6) and the positive threshold voltage of 0.14 V at 25 °C are significantly better than those of a graphene transistor. This wide-band-gap SnO2 MOSFET exhibits high mobility in a 25-205 °C temperature range, a wide operating voltage of 1.5-20 V, and the ability to form on an amorphous substrate, rendering it an ideal candidate for multifunctional low-power integrated circuit (IC), display, and brain-mimicking three-dimensional IC applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sutter-Fella, Carolin M.; Li, Yanbo; Amani, Matin

Hybrid organic-inorganic halide perovskite based semiconductor materials are attractive for use in a wide range of optoelectronic devices because they combine the advantages of suitable optoelectronic attributes and simultaneously low-cost solution processability. Here, we present a two-step low-pressure vapor-assisted solution process to grow high quality homogeneous CH 3NH 3PbI 3-xBr x perovskite films over the full band gap range of 1.6-2.3 eV. Photoluminescence light-in versus light-out characterization techniques are used to provide new insights into the optoelectronic properties of Br-containing hybrid organic-inorganic perovskites as a function of optical carrier injection by employing pump-powers over a 6 orders of magnitude dynamicmore » range. The internal luminescence quantum yield of wide band gap perovskites reaches impressive values up to 30%. This high quantum yield translates into substantial quasi-Fermi level splitting and high "luminescence or optically implied" open-circuit voltage. Most importantly, both attributes, high internal quantum yield and high optically implied open-circuit voltage, are demonstrated over the entire band gap range (1.6 eV ≤ E g ≤ 2.3 eV). These results establish the versatility of Br-containing perovskite semiconductors for a variety of applications and especially for the use as high-quality top cell in tandem photovoltaic devices in combination with industry dominant Si bottom cells. (Figure Presented).« less

Relationship between the energy levels and the photovoltaic properties of oligothiophenes.

PubMed

Lim, Eunhee

2014-08-01

A series of linear π-conjugated oligothiophenes, α,α'-dihexylquinquethiophene (DH5T), 2,5-bis(5'-hexyl-2,2'-bithiophene-5-yl)thieno[3,2-b]thiophene (DH5TT), and α,α'-dihexylheptathiophene (DH7T), has been synthesized using the Suzuki coupling reaction. The optical and electrochemical properties of oligothiophenes were easily tuned by controlling the thiophene number. The UV-vis absorption and photoluminescence (PL) spectra are gradually red-shifted on going from DH5T and DH5TT to DH7T due to the increase in α-conjugation length. The energy band gap decreased as the oligothiophene length increased. The optical band gaps of DH5T, DH5TT, and DH7T occur at 2.39, 2.25, and 2.01 eV, respectively. Bulk heterojunction organic photovoltaic cells (OPVs) fabricated from oligomers showed the power conversion efficiency of 0.45-0.8% under AM 1.5 (100 mW/cm2). Among them, DH5T showed the best OPV performance of an open circuit voltage (VOC) of 0.51 V, short-circuit current (JSC) of 4.25 mA/cm2, and fill factor (FF) of 0.37, resulting in the power conversion efficiency of 0.80%. Moreover, the relationship between conjugation length and photovoltaic properties was systematically investigated in terms of the energy band gap and open circuit voltage (VOC).

Thermally evaporated Cu2ZnSnS4 solar cells

NASA Astrophysics Data System (ADS)

Wang, K.; Gunawan, O.; Todorov, T.; Shin, B.; Chey, S. J.; Bojarczuk, N. A.; Mitzi, D.; Guha, S.

2010-10-01

High efficiency Cu2ZnSnS4 solar cells have been fabricated on glass substrates by thermal evaporation of Cu, Zn, Sn, and S. Solar cells with up to 6.8% efficiency were obtained with absorber layer thicknesses less than 1 μm and annealing times in the minutes. Detailed electrical analysis of the devices indicate that the performance of the devices is limited by high series resistance, a "double diode" behavior of the current voltage characteristics, and an open circuit voltage that is limited by a carrier recombination process with an activation energy below the band gap of the material.

Halbach array generator/motor having an automatically regulated output voltage and mechanical power output

DOEpatents

Post, Richard F.

2005-02-22

A motor/generator having its stationary portion, i.e., the stator, positioned concentrically within its rotatable element, i.e., the rotor, along its axis of rotation. The rotor includes a Halbach array. The stator windings are switched or commutated to provide a DC motor/generator much the same as in a conventional DC motor/generator. The voltage and power are automatically regulated by using centrifugal force to change the diameter of the rotor, and thereby vary the radial gap in between the stator and the rotating Halbach array, as a function of the angular velocity of the rotor.

Amplitude−temporal characteristics of a supershort avalanche electron beam generated during subnanosecond breakdown in air and nitrogen

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tarasenko, V. F., E-mail: vft@loi.hcei.tsc.ru; Baksht, E. Kh.; Beloplotov, D. V.

2016-04-15

The amplitude−temporal characteristics of a supershort avalanche electron beam (SAEB) with an amplitude of up to 100 A, as well as of the breakdown voltage and discharge current, are studied experimentally with a picosecond time resolution. The waveforms of discharge and SAEB currents are synchronized with those of the voltage pulses. It is shown that the amplitude−temporal characteristics of the SAEB depend on the gap length and the designs of the gas diode and cathode. The mechanism for the generation of runaway electron beams in atmospheric-pressure gases is analyzed on the basis of the obtained experimental data.

Amplitude-temporal characteristics of a supershort avalanche electron beam generated during subnanosecond breakdown in air and nitrogen

NASA Astrophysics Data System (ADS)

Tarasenko, V. F.; Baksht, E. Kh.; Beloplotov, D. V.; Burachenko, A. G.; Lomaev, M. I.

2016-04-01

The amplitude-temporal characteristics of a supershort avalanche electron beam (SAEB) with an amplitude of up to 100 A, as well as of the breakdown voltage and discharge current, are studied experimentally with a picosecond time resolution. The waveforms of discharge and SAEB currents are synchronized with those of the voltage pulses. It is shown that the amplitude-temporal characteristics of the SAEB depend on the gap length and the designs of the gas diode and cathode. The mechanism for the generation of runaway electron beams in atmospheric-pressure gases is analyzed on the basis of the obtained experimental data.

Self-consistent-field study of conduction through conjugated molecules

NASA Astrophysics Data System (ADS)

Paulsson, Magnus; Stafström, Sven

2001-07-01

Current-voltage (I-V) characteristics of individual molecules connected by metallic leads are studied theoretically. Using the Pariser-Parr-Pople quantum chemical method to model the molecule enables us to include electron-electron interactions in the Hartree approximation. The self-consistent-field method is used to calculate charging together with other properties for the total system under bias. Thereafter the Landauer formula is used to calculate the current from the transmission amplitudes. The most important parameter to understand charging is the position of the chemical potentials of the leads in relation to the molecular levels. At finite bias, the main part of the potential drop is located at the molecule-lead junctions. Also, the potential of the molecule is shown to partially follow the chemical potential closest to the highest occupied molecular orbital (HOMO). Therefore, the resonant tunneling steps in the I-V curves are smoothed giving a I-V resembling a ``Coulomb-gap.'' However, the charge of the molecule is not quantized since the molecule is small with quite strong interactions with the leads. The calculations predict an increase in the current at the bias corresponding to the energy gap of the molecule irrespective of the metals used in the leads. When the bias is increased further, charge is redistributed from the HOMO level to the lowest unoccupied molecular orbital of the molecule. This gives a step in the I-V curves and a corresponding change in the potential profile over the molecule. Calculations were mainly performed on polyene molecules. Molecules asymmetrically coupled to the leads model the I-V curves for molecules contacted by a scanning tunneling microscopy tip. I-V curves for pentapyrrole and another molecule that show negative differential conductance are also analyzed. The charging of these two systems depends on the shape of the molecular wave functions.

Statistical Studies of the Electric Breakdown in Nitrogen in the Duration Range of 3 ms-60 min

NASA Astrophysics Data System (ADS)

Gorokhov, V. V.; Karelin, V. I.; Perminov, A. V.; Repin, P. B.

2018-05-01

The statistical characteristics of an electric breakdown in the nitrogen in the spike (cathode)-plane gap in the duration range of (3 × 10-3)-3600 s at voltages close to a static breakdown have been studied. It has been found that a probability of a gap breakdown is nonmonotonously distributed over time. The presence of maxima in the probability distribution confirms a contribution of some processes that both stimulate and suppress a breakdown. The typical times of the processes are 30 ms, 10-1 s, and 300 s.

Probing semiconductor gap states with resonant tunneling.

PubMed

Loth, S; Wenderoth, M; Winking, L; Ulbrich, R G; Malzer, S; Döhler, G H

2006-02-17

Tunneling transport through the depletion layer under a GaAs {110} surface is studied with a low temperature scanning tunneling microscope (STM). The observed negative differential conductivity is due to a resonant enhancement of the tunneling probability through the depletion layer mediated by individual shallow acceptors. The STM experiment probes, for appropriate bias voltages, evanescent states in the GaAs band gap. Energetically and spatially resolved spectra show that the pronounced anisotropic contrast pattern of shallow acceptors occurs exclusively for this specific transport channel. Our findings suggest that the complex band structure causes the observed anisotropies connected with the zinc blende symmetry.

Enabling fast charging – A battery technology gap assessment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmed, Shabbir; Bloom, Ira; Jansen, Andrew N.

The battery technology literature is reviewed, with an emphasis on key elements that limit extreme fast charging. Key gaps in existing elements of the technology are presented as well as developmental needs. Among these needs are advanced models and methods to detect and prevent lithium plating; new positive-electrode materials which are less prone to stress-induced failure; better electrode designs to accommodate very rapid diffusion in and out of the electrode; measure temperature distributions during fast charge to enable/validate models; and develop thermal management and pack designs to accommodate the higher operating voltage.

Enabling fast charging – A battery technology gap assessment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmed, Shabbir; Bloom, Ira; Jansen, Andrew N.

The battery technology literature is reviewed, with an emphasis on key elements that limit extreme fast charging. Key gaps in existing elements of the technology are presented as well as developmental needs. Among these needs are advanced models and methods to detect and prevent lithium plating; new positive-electrode materials which are less prone to stress-induced failure; better electrode designs to accommodate very rapid diffusion in and out of the electrode; measure temperature distributions during fast charge to enable / validate models; and develop thermal management and pack designs to accommodate the higher operating voltage.

Halbach array-based design and simulation of disc coreless permanen-magnet integrated starter generator

NASA Astrophysics Data System (ADS)

Li, Y. B.; Yang, Z. X.; Chen, W.; He, Q. Y.

2017-11-01

The functional performance, such as magnetic flux leakage, power density and efficiency, is related to the structural characteristics and design technique for the disc permanent magnet synchronous generators (PMSGs). Halbach array theory-based magnetic circuit structure is developed, and Maxwell3D simulation analysis approach of PMSG is proposed in this paper for integrated starter generator (ISG). The magnetization direction of adjacent permanent magnet is organized in difference of 45 degrees for focusing air gap side, and improving the performance of the generator. The magnetic field distribution and functional performance in load and/or unload conditions are simulated by Maxwell3D module. The proposed approach is verified by simulation analysis, the air gap flux density is 0.66T, and the phase voltage curve has the characteristics of a preferable sinusoidal wave and the voltage amplitude 335V can meet the design requirements while the disc coreless PMSG is operating at rated speed. And the developed magnetic circuit structure can be used for engineering design of the disc coreless PMSG to the integrated starter generator.

Cryomagnetic Point-Contact Andreev Reflection Spectroscopy on Single Crystal Iron-Chalcogenide Superconductors

NASA Astrophysics Data System (ADS)

Yen, Y. T.; Hu, Rongwei; Petrovic, C.; Yeh, K. W.; Wu, M. K.; Wei, J. Y. T.

2012-02-01

We report on cryomagnetic point-contact Andreev reflection spectroscopy performed on single crystals of superconducting FeTe1-xSx and FeTe1-xSex. The samples are cleaved in-situ and the measurements are carried out at temperatures down to 4.2K and in a field up to 9T. At base temperature and zero field, we observe a cone-shaped hump at lower voltages in the conductance spectra with no dips at zero bias and a linear background at higher voltages. The spectral evolution of gap size, zero-bias conductance, and excess spectral area are analyzed as a function of temperature and field. Further spectral analysis is carried out using theoretical models of conductance spectra in multiband superconductors [1,2] and of gap symmetry in Fe-based superconductors [3]. The role of interstitial iron is also considered, by comparison with atomically-resolved scanning tunneling spectroscopy data.[4pt] [1] V. Lukic and E.J. Nicol, PRB 76, 144508 (2007) [2] A. Golubov et al., PRL 103, 077003 (2009) [3] P.J. Hirschfeld et al., RPP 74, 124508 (2011)

Numerical study on xenon positive column discharges of mercury-free lamp

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ouyang, Jiting; He, Feng; Miao, Jinsong

2007-02-15

In this paper, the numerical study has been performed on the xenon positive column discharges of mercury-free fluorescent lamp. The plasma discharge characteristics are analyzed by numerical simulation based on two-dimensional fluid model. The effects of cell geometry, such as the dielectric layer, the electrode width, the electrode gap, and the cell height, and the filling gas including the pressure and the xenon percentage are investigated in terms of discharge current and discharge efficiency. The results show that a long transient positive column will form in the xenon lamp when applying ac sinusoidal power and the lamp can operate inmore » a large range of voltage and frequency. The front dielectric layer of the cell plays an important role in the xenon lamp while the back layer has little effect. The ratio of electrode gap to cell height should be large to achieve a long positive column xenon lamp and higher efficiency. Increase of pressure or xenon concentration results in an increase of discharge efficiency and voltage. The discussions will be helpful for the design of commercial xenon lamp cells.« less

High-voltage electrode optimization towards uniform surface treatment by a pulsed volume discharge

NASA Astrophysics Data System (ADS)

Ponomarev, A. V.; Pedos, M. S.; Scherbinin, S. V.; Mamontov, Y. I.; Ponomarev, S. V.

2015-11-01

In this study, the shape and material of the high-voltage electrode of an atmospheric pressure plasma generation system were optimised. The research was performed with the goal of achieving maximum uniformity of plasma treatment of the surface of the low-voltage electrode with a diameter of 100 mm. In order to generate low-temperature plasma with the volume of roughly 1 cubic decimetre, a pulsed volume discharge was used initiated with a corona discharge. The uniformity of the plasma in the region of the low-voltage electrode was assessed using a system for measuring the distribution of discharge current density. The system's low-voltage electrode - collector - was a disc of 100 mm in diameter, the conducting surface of which was divided into 64 radially located segments of equal surface area. The current at each segment was registered by a high-speed measuring system controlled by an ARM™-based 32-bit microcontroller. To facilitate the interpretation of results obtained, a computer program was developed to visualise the results. The program provides a 3D image of the current density distribution on the surface of the low-voltage electrode. Based on the results obtained an optimum shape for a high-voltage electrode was determined. Uniformity of the distribution of discharge current density in relation to distance between electrodes was studied. It was proven that the level of non-uniformity of current density distribution depends on the size of the gap between electrodes. Experiments indicated that it is advantageous to use graphite felt VGN-6 (Russian abbreviation) as the material of the high-voltage electrode's emitting surface.

A soft switching with reduced voltage stress ZVT-PWM full-bridge converter

NASA Astrophysics Data System (ADS)

Sahin, Yakup; Ting, Naim Suleyman; Acar, Fatih

2018-04-01

This paper introduces a novel active snubber cell for soft switching pulse width modulation DC-DC converters. In the proposed converter, the main switch is turned on under zero voltage transition and turned off under zero voltage switching (ZVS). The auxiliary switch is turned on under zero current switching (ZCS) and turned off under zero current transition. The main diode is turned on under ZVS and turned off under ZCS. All of the other semiconductors in the converter are turned on and off with soft switching. There is no extra voltage stress on the semiconductor devices. Besides, the proposed converter has simple structure and ease of control due to common ground. The detailed theoretical analysis of the proposed converter is presented and also verified with both simulation and experimental study at 100 kHz switching frequency and 600 W output power. Furthermore, the efficiency of the proposed converter is 95.7% at nominal power.

Ion Engine Grid Gap Measurements

NASA Technical Reports Server (NTRS)

Soulas, Gerge C.; Frandina, Michael M.

2004-01-01

A simple technique for measuring the grid gap of an ion engine s ion optics during startup and steady-state operation was demonstrated with beam extraction. The grid gap at the center of the ion optics assembly was measured with a long distance microscope that was focused onto an alumina pin that protruded through the center accelerator grid aperture and was mechanically attached to the screen grid. This measurement technique was successfully applied to a 30 cm titanium ion optics assembly mounted onto an NSTAR engineering model ion engine. The grid gap and each grid s movement during startup from room temperature to both full and low power were measured. The grid gaps with and without beam extraction were found to be significantly different. The grid gaps at the ion optics center were both significantly smaller than the cold grid gap and different at the two power levels examined. To avoid issues associated with a small grid gap during thruster startup with titanium ion optics, a simple method was to operate the thruster initially without beam extraction to heat the ion optics. Another possible method is to apply high voltage to the grids prior to igniting the discharge because power deposition to the grids from the plasma is lower with beam extraction than without. Further testing would be required to confirm this approach.

Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe{sub 1.64}Ga{sub 0.36}O{sub 3} oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhowmik, R. N., E-mail: rnbhowmik.phy@pondiuni.edu.in; Vijayasri, G.

2015-06-15

We have studied current-voltage (I-V) characteristics of α-Fe{sub 1.64}Ga{sub 0.36}O{sub 3}, a typical canted ferromagnetic semiconductor. The sample showed a transformation of the I-V curves from linear to non-linear character with the increase of bias voltage. The I-V curves showed irreversible features with hysteresis loop and bi-stable electronic states for up and down modes of voltage sweep. We report positive magnetoresistance and magnetic field induced negative differential resistance as the first time observed phenomena in metal doped hematite system. The magnitudes of critical voltage at which I-V curve showed peak and corresponding peak current are affected by magnetic field cycling.more » The shift of the peak voltage with magnetic field showed a step-wise jump between two discrete voltage levels with least gap (ΔV{sub P}) 0.345(± 0.001) V. The magnetic spin dependent electronic charge transport in this new class of magnetic semiconductor opens a wide scope for tuning large electroresistance (∼500-700%), magnetoresistance (70-135 %) and charge-spin dependent conductivity under suitable control of electric and magnetic fields. The electric and magnetic field controlled charge-spin transport is interesting for applications of the magnetic materials in spintronics, e.g., magnetic sensor, memory devices and digital switching.« less

High-frequency graphene voltage amplifier.

PubMed

Han, Shu-Jen; Jenkins, Keith A; Valdes Garcia, Alberto; Franklin, Aaron D; Bol, Ageeth A; Haensch, Wilfried

2011-09-14

While graphene transistors have proven capable of delivering gigahertz-range cutoff frequencies, applying the devices to RF circuits has been largely hindered by the lack of current saturation in the zero band gap graphene. Herein, the first high-frequency voltage amplifier is demonstrated using large-area chemical vapor deposition grown graphene. The graphene field-effect transistor (GFET) has a 6-finger gate design with gate length of 500 nm. The graphene common-source amplifier exhibits ∼5 dB low frequency gain with the 3 dB bandwidth greater than 6 GHz. This first AC voltage gain demonstration of a GFET is attributed to the clear current saturation in the device, which is enabled by an ultrathin gate dielectric (4 nm HfO(2)) of the embedded gate structures. The device also shows extrinsic transconductance of 1.2 mS/μm at 1 V drain bias, the highest for graphene FETs using large-scale graphene reported to date.

Altered ion channel conductance and ionic selectivity induced by large imposed membrane potential pulse.

PubMed Central

Chen, W; Lee, R C

1994-01-01

The effects of large magnitude transmembrane potential pulses on voltage-gated Na and K channel behavior in frog skeletal muscle membrane were studied using a modified double vaseline-gap voltage clamp. The effects of electroconformational damage to ionic channels were separated from damage to lipid bilayer (electroporation). A 4 ms transmembrane potential pulse of -600 mV resulted in a reduction of both Na and K channel conductivities. The supraphysiologic pulses also reduced ionic selectivity of the K channels against Na+ ions, resulting in a depolarization of the membrane resting potential. However, TTX and TEA binding effects were unaltered. The kinetics of spontaneous reversal of the electroconformational damage of channel proteins was found to be dependent on the magnitude of imposed membrane potential pulse. These results suggest that muscle and nerve dysfunction after electrical shock may be in part caused by electroconformational damage to voltage-gated ion channels. PMID:7948676

A polarization-independent liquid crystal phase modulation using polymer-network liquid crystal with orthogonal alignment layers

NASA Astrophysics Data System (ADS)

Chen, Ming-Syuan; Lin, Wei-Chih; Tsou, Yu-Shih; Lin, Yi-Hsin

2012-10-01

A polarization-independent liquid crystal (LC) phase modulation using polymer-network liquid crystals with orthogonal alignments layers (T-PNLC) is demonstrated. T-PNLC consists of three layers. LC directors in the two layers near glass substrates are orthogonal to each other. In the middle layer, LC directors are perpendicular to the glass substrate. The advantages of such T-PNLC include polarizer-free, larger phase shift (~0.4π rad) than the residual phase type (<0.05π rad), and low operating voltage (< 30Vrms). It does not require bias voltage for avoiding scattering because the refractive index of liquid crystals matches that of polymers. The phase shift of T-PNLC is affected by the cell gap and the curing voltages. The potential applications are laser beam steering, spatial light modulators and electrically tunable micro-lens arrays.

Ozone generation by negative corona discharge: the effect of Joule heating

NASA Astrophysics Data System (ADS)

Yanallah, K.; Pontiga, F.; Fernández-Rueda, A.; Castellanos, A.; Belasri, A.

2008-10-01

Ozone generation in pure oxygen using a wire-to-cylinder corona discharge reactor is experimentally and numerically investigated. Ozone concentration is determined by means of direct UV spectroscopy and the effects of Joule heating and ozone decomposition on the electrodes are analysed for different discharge gaps. The numerical model combines the physical processes in the corona discharge with the chemistry of ozone formation and destruction. The chemical kinetics model and the electrical model are coupled through Poisson's equation, and the current-voltage (CV) characteristic measured in experiments is used as input data to the numerical simulation. The numerical model is able to predict the radial distributions of electrons, ions, atoms and molecules for each applied voltage of the CV characteristic. In particular, the evolution of ozone density inside the discharge cell has been investigated as a function of current intensity and applied voltage.

Theoretical analysis of ozone generation by pulsed dielectric barrier discharge in oxygen

NASA Astrophysics Data System (ADS)

Wei, L. S.; Zhou, J. H.; Wang, Z. H.; Cen, K. F.

2007-08-01

The use of very short high-voltage pulses combined with a dielectric layer results in high-energy electrons that dissociate oxygen molecules into atoms, which are a prerequisite for the subsequent production of ozone by collisions with oxygen molecules and third particles. The production of ozone depends on both the electrical and the physical parameters. For ozone generation by pulsed dielectric barrier discharge in oxygen, a mathematical model, which describes the relation between ozone concentration and these parameters that are of importance in its design, is developed according to dimensional analysis theory. A formula considering the ozone destruction factor is derived for predicting the characteristics of the ozone generation, within the range of the corona inception voltage to the gap breakdown voltage. The trend showing the dependence of the concentration of ozone in oxygen on these parameters generally agrees with the experimental results, thus confirming the validity of the mathematical model.

Stochastic DG Placement for Conservation Voltage Reduction Based on Multiple Replications Procedure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zhaoyu; Chen, Bokan; Wang, Jianhui

2015-06-01

Conservation voltage reduction (CVR) and distributed-generation (DG) integration are popular strategies implemented by utilities to improve energy efficiency. This paper investigates the interactions between CVR and DG placement to minimize load consumption in distribution networks, while keeping the lowest voltage level within the predefined range. The optimal placement of DG units is formulated as a stochastic optimization problem considering the uncertainty of DG outputs and load consumptions. A sample average approximation algorithm-based technique is developed to solve the formulated problem effectively. A multiple replications procedure is developed to test the stability of the solution and calculate the confidence interval ofmore » the gap between the candidate solution and optimal solution. The proposed method has been applied to the IEEE 37-bus distribution test system with different scenarios. The numerical results indicate that the implementations of CVR and DG, if combined, can achieve significant energy savings.« less

Effect of the scheme of plasmachemical processes on the calculated characteristics of a barrier discharge in xenon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Avtaeva, S. V.; Kulumbaev, E. B.

2008-06-15

The dynamics of a repetitive barrier discharge in xenon at a pressure of 400 Torr is simulated using a one-dimensional drift-diffusion model. The thicknesses of identical barriers with a dielectric constant of 4 are 2 mm, and the gap length is 4 mm. The discharge is fed with an 8-kV ac voltage at a frequency of 25 or 50 kHz. The development of the ionization wave and the breakdown and afterglow phases of a barrier discharge are analyzed using two different kinetic schemes of elementary processes in a xenon plasma. It is shown that the calculated waveforms of the dischargemore » voltage and current, the instant of breakdown, and the number of breakdowns per voltage half-period depend substantially on the properties of the kinetic scheme of plasmachemical processes.« less

Electronic gap sensor and method

DOEpatents

Williams, R.S.; King, E.L.; Campbell, S.L.

1991-08-06

Disclosed are an apparatus and method for regulating the gap between a casting nozzle and a casting wheel in which the gap between the casting nozzle and the casting wheel is monitored by means of at least one sensing element protruding from the face of the casting nozzle. The sensing element is preferably connected to a voltage source and the casting wheel grounded. When the sensing element contacts the casting wheel, an electric circuit is completed. The completion of the circuit can be registered by an indicator, and the presence or absence of a completed circuit indicates the relative position of the casting nozzle to the casting wheel. The relative positions of the casting nozzle and casting wheel can thereby be selectively adjusted to continually maintain a predetermined distance between their adjacent surfaces. 5 figures.

Electronic gap sensor and method

DOEpatents

Williams, Robert S.; King, Edward L.; Campbell, Steven L.

1991-01-01

An apparatus and method for regulating the gap between a casting nozzle and a casting wheel in which the gap between the casting nozzle and the casting wheel is monitored by means of at least one sensing element protruding from the face of the casting nozzle. The sensing element is preferably connected to a voltage source and the casting wheel grounded. When the sensing element contacts the casting wheel, an electric circuit is completed. The completion of the circuit can be registered by an indicator, and the presence or absence of a completed circuit indicates the relative position of the casting nozzle to the casting wheel. The relative positions of the casting nozzle and casting wheel can thereby be selectively adjusted to continually maintain a predetermined distance between their adjacent surfaces.

New Insights into the Operating Voltage of Aqueous Supercapacitors.

PubMed

Yu, Minghao; Lu, Yongzhuang; Zheng, Haibing; Lu, Xihong

2018-03-12

The main limitation of aqueous supercapacitors (SCs) lies in their narrow operating voltages, especially when compared with organic SCs. Fundamental understanding of factors relevant to the operating voltage helps providing guidance for the assembly of high-voltage aqueous SCs. In this regard, this concept analyzes the deciding factors for the operating voltage of aqueous SCs. Strategies applied to expand the operating voltage are summarized and discussed from the aspects of electrolyte, electrode, and asymmetric structure. Dynamic factors associated with water electrolysis and maximally using the available potential ranges of electrodes are particularly emphasized. Finally, other promising approaches that have not been explored and their challenges are also elaborated, hoping to provide more insights for the design of high-voltage aqueous SCs. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

A new venous infusion pathway monitoring system.

PubMed

Maki, Hiromichi; Yonezawa, Yoshiharu; Ogawa, Hidekuni; Ninomiya, Ishio; Sata, Koji; Hamada, Shingo; Caldwell, W Morton

2007-01-01

A new infusion catheter pathway monitoring system employing linear integrated circuits and a low-power 8-bit single chip microcomputer has been developed for hospital and home use. The sensor consists of coaxial three-layer conductive tapes wrapped around the polyvinyl chloride infusion tube. The inner tape is the main electrode, which records an AC (alternating current) voltage induced on the patient's body by electrostatic coupling from the normal 100 volt, 60 Hz AC power line wiring field in the patient's room. The outside tape layer is a reference electrode to monitor the AC voltage around the main electrode. The center tape layer is connected to system ground and functions as a shield. The microcomputer calculates the ratio of the induced AC voltages recorded by the main and reference electrodes and if the ratio indicates a detached infusion, alerts the nursing station, via the nurse call system or low transmitting power mobile phone.

Mono-Heteromeric Configurations of Gap Junction Channels Formed by Connexin43 and Connexin45 Reduce Unitary Conductance and Determine both Voltage Gating and Metabolic Flux Asymmetry

PubMed Central

Zhong, Guoqiang; Akoum, Nazem; Appadurai, Daniel A.; Hayrapetyan, Volodya; Ahmed, Osman; Martinez, Agustin D.; Beyer, Eric C.; Moreno, Alonso P.

2017-01-01

In cardiac tissues, the expression of multiple connexins (Cx40, Cx43, Cx45, and Cx30.2) is a requirement for proper development and function. Gap junctions formed by these connexins have distinct permeability and gating mechanisms. Since a single cell can express more than one connexin isoform, the formation of hetero-multimeric gap junction channels provides a tissue with an enormous repertoire of combinations to modulate intercellular communication. To study further the perm-selectivity and gating properties of channels containing Cx43 and Cx45, we studied two monoheteromeric combinations in which a HeLa cell co-transfected with Cx43 and Cx45 was paired with a cell expressing only one of these connexins. Macroscopic measurements of total conductance between cell pairs indicated a drastic reduction in total conductance for mono-heteromeric channels. In terms of Vj dependent gating, Cx43 homomeric connexons facing heteromeric connexons only responded weakly to voltage negativity. Cx45 homomeric connexons exhibited no change in Vj gating when facing heteromeric connexons. The distributions of unitary conductances (γj) for both mono-heteromeric channels were smaller than predicted, and both showed low permeability to the fluorescent dyes Lucifer yellow and Rhodamine123. For both mono-heteromeric channels, we observed flux asymmetry regardless of dye charge: flux was higher in the direction of the heteromeric connexon for MhetCx45 and in the direction of the homomeric Cx43 connexon for MhetCx43. Thus, our data suggest that co-expression of Cx45 and Cx43 induces the formation of heteromeric connexons with greatly reduced permeability and unitary conductance. Furthermore, it increases the asymmetry for voltage gating for opposing connexons, and it favors asymmetric flux of molecules across the junction that depends primarily on the size (not the charge) of the crossing molecules. PMID:28611680

Mono-Heteromeric Configurations of Gap Junction Channels Formed by Connexin43 and Connexin45 Reduce Unitary Conductance and Determine both Voltage Gating and Metabolic Flux Asymmetry.

PubMed

Zhong, Guoqiang; Akoum, Nazem; Appadurai, Daniel A; Hayrapetyan, Volodya; Ahmed, Osman; Martinez, Agustin D; Beyer, Eric C; Moreno, Alonso P

2017-01-01

In cardiac tissues, the expression of multiple connexins (Cx40, Cx43, Cx45, and Cx30.2) is a requirement for proper development and function. Gap junctions formed by these connexins have distinct permeability and gating mechanisms. Since a single cell can express more than one connexin isoform, the formation of hetero-multimeric gap junction channels provides a tissue with an enormous repertoire of combinations to modulate intercellular communication. To study further the perm-selectivity and gating properties of channels containing Cx43 and Cx45, we studied two monoheteromeric combinations in which a HeLa cell co-transfected with Cx43 and Cx45 was paired with a cell expressing only one of these connexins. Macroscopic measurements of total conductance between cell pairs indicated a drastic reduction in total conductance for mono-heteromeric channels. In terms of Vj dependent gating, Cx43 homomeric connexons facing heteromeric connexons only responded weakly to voltage negativity. Cx45 homomeric connexons exhibited no change in Vj gating when facing heteromeric connexons. The distributions of unitary conductances (γj) for both mono-heteromeric channels were smaller than predicted, and both showed low permeability to the fluorescent dyes Lucifer yellow and Rhodamine123. For both mono-heteromeric channels, we observed flux asymmetry regardless of dye charge: flux was higher in the direction of the heteromeric connexon for MhetCx45 and in the direction of the homomeric Cx43 connexon for MhetCx43. Thus, our data suggest that co-expression of Cx45 and Cx43 induces the formation of heteromeric connexons with greatly reduced permeability and unitary conductance. Furthermore, it increases the asymmetry for voltage gating for opposing connexons, and it favors asymmetric flux of molecules across the junction that depends primarily on the size (not the charge) of the crossing molecules.

Present Status of Power Circuit Breaker and its Future

NASA Astrophysics Data System (ADS)

Yoshioka, Yoshio

Gas circuit breaker and vacuum circuit breaker are the 2 main types of circuit breaker used in extra high voltage and medium voltage networks. After reviewing the history of these circuit breakers, their present status and technologies are described. As for future technology, computation of interrupting phenomena, SF6 gas less apparatus and expectation of the high voltage vacuum circuit breaker are discussed.

Dynamic model based on voltage transfer curve for pattern formation in dielectric barrier glow discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Ben; He, Feng; Ouyang, Jiting, E-mail: jtouyang@bit.edu.cn

2015-12-15

Simulation work is very important for understanding the formation of self-organized discharge patterns. Previous works have witnessed different models derived from other systems for simulation of discharge pattern, but most of these models are complicated and time-consuming. In this paper, we introduce a convenient phenomenological dynamic model based on the basic dynamic process of glow discharge and the voltage transfer curve (VTC) to study the dielectric barrier glow discharge (DBGD) pattern. VTC is an important characteristic of DBGD, which plots the change of wall voltage after a discharge as a function of the initial total gap voltage. In the modeling,more » the combined effect of the discharge conditions is included in VTC, and the activation-inhibition effect is expressed by a spatial interaction term. Besides, the model reduces the dimensionality of the system by just considering the integration effect of current flow. All these greatly facilitate the construction of this model. Numerical simulations turn out to be in good accordance with our previous fluid modeling and experimental result.« less

Cathode fall model and current-voltage characteristics of field emission driven direct current microplasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Venkattraman, Ayyaswamy

2013-11-15

The post-breakdown characteristics of field emission driven microplasma are studied theoretically and numerically. A cathode fall model assuming a linearly varying electric field is used to obtain equations governing the operation of steady state field emission driven microplasmas. The results obtained from the model by solving these equations are compared with particle-in-cell with Monte Carlo collisions simulation results for parameters including the plasma potential, cathode fall thickness, ion number density in the cathode fall, and current density vs voltage curves. The model shows good overall agreement with the simulations but results in slightly overpredicted values for the plasma potential andmore » the cathode fall thickness attributed to the assumed electric field profile. The current density vs voltage curves obtained show an arc region characterized by negative slope as well as an abnormal glow discharge characterized by a positive slope in gaps as small as 10 μm operating at atmospheric pressure. The model also retrieves the traditional macroscale current vs voltage theory in the absence of field emission.« less

Flash water-window x-ray generator with a ferrite capillary

NASA Astrophysics Data System (ADS)

Sato, Eiichi; Sagae, Michiaki; Ichimaru, Toshio; Takayama, Kazuyoshi; Sakamaki, Kimio; Tamakawa, Yoshiharu

1997-12-01

The fundamental study on a flash water-window x-ray generator is described. This generator is composed of a high-voltage power supply, a polarity-inversion high-voltage pulser, a krytron pulser as a trigger device, an oil-diffusion pump, and a vacuum chamber with a capillary. A combined ceramic condenser of about 5 nF in the pulser is charged up to 70 kV by the power supply, and the electric charges in the condenser are discharged to the capillary in the tube after closing a gap switch by the krytron pulser. In the present work, the chamber is evacuated by the pump with a pressure of about 1 by 10-3 Pa, and the titanium anode and cathode electrodes are employed to produce L-series characteristic x rays in the water-window range. The diameter and the length of the ferrite capillary are 2.0 and 30 mm, respectively. Both the cathode voltage and the discharge current displayed damped oscillations. The peak values of the voltage and current increased when the charging voltage was increased, and their maximum values were minus 24 kV and 2.8 kA, respectively. The pulse durations of the water-window x-rays were nearly equivalent to those of the damped oscillations of the voltage and current, and their values were less than 10 microseconds.

Experimental study of the processes accompanying argon breakdown in a long discharge tube at a reduced pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meshchanov, A. V.; Ionikh, Yu. Z., E-mail: y.ionikh@spbu.ru; Shishpanov, A. I.

Results are presented from experimental studies of the breakdown stage of a low-pressure discharge (1 and 5 Torr) in a glass tube the length of which (75 cm) is much larger than its diameter (2.8 cm). Breakdowns occurred under the action of positive voltage pulses with an amplitude of up to 9.4 kV and a characteristic rise time of 2–50 μs. The discharge current in the steady-state mode was 10–120 mA. The electrode voltage, discharge current, and radiation from the discharge gap were detected simultaneously. The dynamic breakdown voltage was measured, the prebreakdown ionization wave was recorded, and its velocitymore » was determined. The dependence of the discharge parameters on the time interval between voltage pulses (the socalled “memory effect”) was analyzed. The memory effect manifests itself in a decrease or an increase in the breakdown voltage and a substantial decrease in its statistical scatter. The time interval between pulses in this case can reach 0.5 s. The effect of illumination of the discharge tube with a light source on the breakdown was studied. It is found that the irradiation of the anode region of the tube by radiation with wavelengths of ≤500 nm substantially reduces the dynamic breakdown voltage. Qualitative explanations of the obtained results are offered.« less

Parametric investigation on the effect of nitrogen to reduce SF6 content in spark gap

NASA Astrophysics Data System (ADS)

Raj, Avinash; Khaidir, Nur; Ishak, Sanuri; Ghani, Basri Abdul; Chakrabarty, Chandan; Permal, Navitharshaani; Ahmad, Harizan

2017-03-01

Almost all the MV and HV switchgears used by power utilities for interrupting faults are Sulphur Hexaflouride SF6 gas circuit breakers as this gas has the best dielectric properties to quench the onset of an arc in the event of fault. However due to strong dissociating properties of this gas when in contact with air that can release fluorine into the atmosphere, the Kyoto protocol has mandated to reduce the usage of SF6 in the future. SF6 is a greenhouse gas and it's about 3000 more severe than CO2. And that's the reason for replacing this gas. A close match in the quenching properties to SF6 that is now being intensively researched is nitrogen N2. This gas is considered to be an inert gas, and its release into the atmosphere has no harmful effects (except for asphyxiation - which can be easily handled with awareness). As the need for a replacement of SF6 becomes critical in the near future, the urgency to find the right gas is immediate. Hence the proposed work in this paper is to make a comprehensive parametric investigation of N2 gas in vacuum spark-gap. The spark-gap is chosen due to flexibility in changing the gap distance and easily be housed in vacuum. The parameters to be investigated are pure N2 and N2/ SF6 mix. The settling-time of the electrical break-down voltage and current are measured using voltage probe and Pearson probe. This time is paramount as it determines the speed of breaking the circuit. A faster breaking time ensures the safety of other HV equipment in the circuit. A comparative study between the various parameters will be conducted to obtain the best recipe (gas mix and gap distance) that gives the shortest settling time the breakdown using N2/ SF6/Mixture gas was successfully conducted and a Paschen curve has been established.

Preparation of the spacer for narrow electrode gap configuration in ionization-based gas sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saheed, Mohamed Shuaib Mohamed; Mohamed, Norani Muti; Burhanudin, Zainal Arif

2012-09-26

Carbon nanotubes (CNTs) have started to be developed as the sensing element for ionization-based gas sensors due to the demand for improved sensitivity, selectivity, stability and other sensing properties beyond what can be offered by the conventional ones. Although these limitations have been overcome, the problems still remain with the conventional ionization-based gas sensors in that they are bulky and operating with large breakdown voltage and high temperature. Recent studies have shown that the breakdown voltage can be reduced by using nanostructured electrodes and narrow electrode gap. Nanostructured electrode in the form of aligned CNTs array with evenly distributed nanotipsmore » can enhance the linear electric field significantly. The later is attributed to the shorter conductivity path through narrow electrode gap. The paper presents the study on the design consideration in order to realize ionization based gas sensor using aligned carbon nanotubes array in an optimum sensor configuration with narrow electrode gap. Several deposition techniques were studied to deposit the spacer, the key component that can control the electrode gap. Plasma spray deposition, electron beam deposition and dry oxidation method were employed to obtain minimum film thickness around 32 {mu}m. For plasma spray method, sand blasting process is required in order to produce rough surface for strong bonding of the deposited film onto the surface. Film thickness, typically about 39 {mu}m can be obtained. For the electron beam deposition and dry oxidation, the film thickness is in the range of nanometers and thus unsuitable to produce the spacer. The deposited multilayer film consisting of copper, alumina and ferum on which CNTs array will be grown was found to be removed during the etching process. This is attributed to the high etching rate on the thin film which can be prevented by reducing the rate and having a thicker conductive copper film.« less

Comparison of the Josephson Voltage Standards of the DMDM and the BIPM (part of the ongoing BIPM key comparison BIPM.EM-K10.b)

NASA Astrophysics Data System (ADS)

Solve, S.; Chayramy, R.; Stock, M.; Pantelic-Babic, J.; Sofranac, Z.; Cincar Vujovic, T.

2016-01-01

A comparison of the Josephson array voltage standards of the Bureau International des Poids et Mesures (BIPM) and the Directorate of Measures and Precious Metals (DMDM), Belgrade, Serbia, was carried out in June 2015 at the level of 10 V. For this exercise, options A and B of the BIPM.EM-K10.b comparison protocol were applied. Option B required the BIPM to provide a reference voltage for measurement by the DMDM using its Josephson standard with its own measuring device. Option A required the DMDM to provide a reference voltage with its Josephson voltage standard for measurement by the BIPM using an analogue nanovoltmeter and associated measurement loop. Since no sufficiently stable voltage could be achieved in this configuration, a digital detector was used. In all cases the BIPM array was kept floating from ground. The final results were in good agreement within the combined relative standard uncertainty of 1.5 parts in 1010 for the nominal voltage of 10 V. Main text To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/. The final report has been peer-reviewed and approved for publication by the CCEM, according to the provisions of the CIPM Mutual Recognition Arrangement (CIPM MRA).

A spatial light modulator that uses scattering in a cholesteric liquid crystal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saito, Mitsunori, E-mail: msaito@rins.ryukoku.ac.jp; Uemi, Hiroto

2016-03-15

When a cholesteric liquid crystal (helical pitch: 5 μm) was sandwiched between two glass plates with no alignment coating (gap: 20 μm), a random-domain texture appeared and a strong light scattering took place. This translucent texture turned to a transparent homeotropic phase when an electric voltage of 20 V was applied to the liquid crystal layer. This phase transition was used for constructing a spatial light modulator that needed no polarizers. Indium-tin-oxide electrodes (0.8 mm square) were arranged on a glass substrate to create a 20 × 20 pixel array (20 mm square). The liquid crystal was injected into amore » gap (20 μm thickness) between this substrate and another glass plate with a uniform electrode (ground). The transmittance of the pixels was originally below 10% and decreased to 0% by 7 V application because of increase in the scattering loss. As the voltage was raised, the transmittance increased gradually in the 7–17 V range and then rapidly in the 17–20 V range, attaining 40% at 27 V. Various transmittance distributions or gray-scale images were attainable by applying a suitable voltage (7–27 V) to each pixel. The transmission range of this spatial light modulator extended from ultraviolet (350 nm) to infrared wavelengths (>800 nm). Owing to this wide transmission range as well as capability of the polarizer-free operation, this spatial light modulator is useful to control a lamp spectrum in spectroscopic measurements.« less

Process optimization for microcystin-LR degradation by Response Surface Methodology and mechanism analysis in gas-liquid hybrid discharge system.

PubMed

Zhang, Yi; Wei, Hanyu; Xin, Qing; Wang, Mingang; Wang, Qi; Wang, Qiang; Cong, Yanqing

2016-12-01

A gas-liquid hybrid discharge system was applied to microcystin-LR (MC-LR) degradation. MC-LR degradation was completed after 1 min under a pulsed high voltage of 16 kV, gas-liquid interface gap of 10 mm and oxygen flow rate of 160 L/h. The Box-Behnken Design was proposed in Response Surface Methodology to evaluate the influence of pulsed high voltage, electrode distance and oxygen flow rate on MC-LR removal efficiency. Multiple regression analysis, focused on multivariable factors, was employed and a reduced cubic model was developed. The ANOVA analysis shows that the model is significant and the model prediction on MC-LR removal was also validated with experimental data. The optimum conditions for the process are obtained at pulsed voltage of 16 kV, gas-liquid interface gap of 10 mm and oxygen flow rate of 120 L/h with ta removal efficiency of MC-LR of 96.6%. The addition of catalysts (TiO 2 or Fe 2+ ) in the gas-liquid hybrid discharge system was found to enhance the removal of MC-LR. The intermediates of MC-LR degradation were analyzed by liquid chromatography/mass spectrometry. The degradation pathway proposed envisaged the oxidation of hydroxyl radicals and ozone, and attack of high-energy electrons on the unsaturated double bonds of Adda and Mdha, with MC-LR finally decomposing into small molecular products. Copyright © 2016 Elsevier Ltd. All rights reserved.

Amino terminal glutamate residues confer spermine sensitivity and affect voltage gating and channel conductance of rat connexin40 gap junctions.

PubMed

Musa, Hassan; Fenn, Edward; Crye, Mark; Gemel, Joanna; Beyer, Eric C; Veenstra, Richard D

2004-06-15

Connexin40 (Cx40) contains a specific binding site for spermine (affinity approximately 100 microm) whereas connexin43 (Cx43) is unaffected by identical concentrations of intracellular spermine. Replacement of two unique glutamate residues, E9 and E13, from the cytoplasmic amino terminal domain of Cx40 with the corresponding lysine residues from Cx43 eliminated the block by 2 mm spermine, reduced the transjunctional voltage (V(j)) gating sensitivity, and reduced the unitary conductance of this Cx40E9,13K gap junction channel protein. The single point mutations, Cx40E9K and Cx40E13K, predominantly affected the residual conductance state (G(min)) and V(j) gating properties, respectively. Heterotypic pairing of Cx40E9,13K with wild-type Cx40 in murine neuro2A (N2A) cells produced a strongly rectifying gap junction reminiscent of the inward rectification properties of the Kir (e.g. Kir2.x) family of potassium channels. The reciprocal Cx43K9,13E mutant protein exhibited reduced V(j) sensitivity, but displayed much less rectification in heterotypic pairings with wtCx43, negligible changes in the unitary channel conductance, and remained insensitive to spermine block. These data indicate that the connexin40 amino terminus may form a critical cytoplasmic pore-forming domain that serves as the receptor for V(j)-dependent closure and block by intracellular polyamines. Functional reciprocity between Cx40 and Cx43 gap junctions involves other amino acid residues in addition to the E or K 9 and 13 loci located on the amino terminal domain of these two connexins.

Membrane currents underlying activity in frog sinus venosus

PubMed Central

Brown, Hilary F.; Giles, Wayne; Noble, Susan J.

1977-01-01

1. The spontaneous electrical activity of small strips of muscle from the sinus venosus region of the heart of Rana catesbeiana was investigated using the double sucrose gap technique. The voltage clamp was used to record the ionic currents underlying the pace-maker depolarization and the action potential. 2. The records of spontaneous electrical activity are very similar to those obtained from the sinus venosus using micro-electrodes. Moreover, the pace-maker activity is almost completely insensitive to tetrodotoxin (TTX) at 2·0 × 10-6 g/ml., which suggests that the pace-maker responses can be classified as primary, as opposed to follower pacing. 3. In response to short rectangular depolarizing voltage clamp pulses, only one inward current is activated. This current is almost completely insensitive to TTX but can be blocked by manganese ions. It appears, therefore, to be equivalent to the slow inward (Ca2+/Na+) current, Isi, of other cardiac tissues. The threshold for Isi is near to the maximum diastolic potential, indicating that it must be activated during the pace-maker depolarization. 4. Interruption of the normal pace-maker depolarization by rapid activation of the voltage clamp circuit reveals the time-dependent decay of outward current. This current reverses between -75 and -90 mV and, therefore, is probably carried mainly by potassium ions. 5. Outward current decay is not a simple exponential, and Hodgkin—Huxley analysis suggests that two distinct components of outward current may be present. One of these is activated in the potential range of the pace-maker depolarization and the other at more positive potentials. Both outward currents reach full, steady-state activation at about zero mV, i.e. within the `plateau' range of the sinus action potential. 6. These results are compared with other recently published voltage clamp data from the rabbit sino—atrial node. 7. A hypothesis for the generation of pace-maker activity is presented which involves (i) decay of outward current and (ii) activation of the slow inward current, Isi. PMID:303699

Conversion of electromagnetic energy in Z-pinch process of single planar wire arrays at 1.5 MA

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liangping, Wang; Mo, Li; Juanjuan, Han

The electromagnetic energy conversion in the Z-pinch process of single planar wire arrays was studied on Qiangguang generator (1.5 MA, 100 ns). Electrical diagnostics were established to monitor the voltage of the cathode-anode gap and the load current for calculating the electromagnetic energy. Lumped-element circuit model of wire arrays was employed to analyze the electromagnetic energy conversion. Inductance as well as resistance of a wire array during the Z-pinch process was also investigated. Experimental data indicate that the electromagnetic energy is mainly converted to magnetic energy and kinetic energy and ohmic heating energy can be neglected before the final stagnation. Themore » kinetic energy can be responsible for the x-ray radiation before the peak power. After the stagnation, the electromagnetic energy coupled by the load continues increasing and the resistance of the load achieves its maximum of 0.6–1.0 Ω in about 10–20 ns.« less

Photodiode Based on CdO Thin Films as Electron Transport Layer

NASA Astrophysics Data System (ADS)

Soylu, M.; Kader, H. S.

2016-11-01

Cadmium oxide (CdO) thin films were synthesized by the sol-gel method. The films were analyzed by means of XRD, AFM, and UV/Vis spectrophotometry. X-ray diffraction patterns confirm that the films are formed from CdO with cubic crystal structure and consist of nano-particles. The energy gap of the prepared film was found to be 2.29 eV. The current-voltage ( I- V) characteristics of the CdO/ p-Si heterojunction were examined in the dark and under different illumination intensities. The heterojunction showed high rectifying behavior and a strong photoresponse. Main electrical parameters of the photodiode such as series and shunt resistances ( R s and R sh), saturation current I 0, and photocurrent I ph, were extracted considering a single diode equivalent circuit of a photovoltaic cell. Results indicate that the application of CdO thin films as an electron transport layer on p-Si acts as a photodetector in the field of the UV/visible.

Mechanism of high-fluence proton induced electrical degradation in AlGaN/GaN high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Lei, Zhifeng; Guo, Hongxia; Tang, Minghua; Peng, Chao; Zhang, Zhangang; Huang, Yun; En, Yunfei

2018-07-01

The effects of displacement damage induced by 3 and 6 MeV protons in AlGaN/GaN high-electron-mobility transistors (HEMTs) are investigated. For the 6 MeV protons at a dose of 5 × 1014 cm‑2, a 12% decrease in saturation current, a 3.8% decrease in the peak transconductance, a 0.3 V positive shift of the threshold voltage, and a three-to fourfold decrease in reverse gate leakage current are observed compared with the pre-irradiation values. The main degradation mechanism is considered to be the generation of deep trap states in the band gap, which remove electrons and reduce the carrier mobility in a two-dimensional electron gas (2DEG). Both the carrier removal rate and negatively charged trap density can be extracted, which shows that about 3500 proton injections lead to one carrier removal. Proton fluence and energy are found to be two key parameters that affect the degradation characteristics of irradiated GaN HEMTs.

Induced Charge Fluctuations in Semiconductor Detectors with a Cylindrical Geometry

NASA Astrophysics Data System (ADS)

Samedov, Victor V.

2018-01-01

Now, compound semiconductors are very appealing for hard X-ray room-temperature detectors for medical and astrophysical applications. Despite the attractive properties of compound semiconductors, such as high atomic number, high density, wide band gap, low chemical reactivity and long-term stability, poor hole and electron mobility-lifetime products degrade the energy resolution of these detectors. The main objective of the present study is in development of a mathematical model of the process of the charge induction in a cylindrical geometry with accounting for the charge carrier trapping. The formulae for the moments of the distribution function of the induced charge and the formulae for the mean amplitude and the variance of the signal at the output of the semiconductor detector with a cylindrical geometry were derived. It was shown that the power series expansions of the detector amplitude and the variance in terms of the inverse bias voltage allow determining the Fano factor, electron mobility lifetime product, and the nonuniformity level of the trap density of the semiconductor material.

High voltage systems (tube-type microwave)/low voltage system (solid-state microwave) power distribution

NASA Technical Reports Server (NTRS)

Nussberger, A. A.; Woodcock, G. R.

1980-01-01

SPS satellite power distribution systems are described. The reference Satellite Power System (SPS) concept utilizes high-voltage klystrons to convert the onboard satellite power from dc to RF for transmission to the ground receiving station. The solar array generates this required high voltage and the power is delivered to the klystrons through a power distribution subsystem. An array switching of solar cell submodules is used to maintain bus voltage regulation. Individual klystron dc voltage conversion is performed by centralized converters. The on-board data processing system performs the necessary switching of submodules to maintain voltage regulation. Electrical power output from the solar panels is fed via switch gears into feeder buses and then into main distribution buses to the antenna. Power also is distributed to batteries so that critical functions can be provided through solar eclipses.

Activation of L-type calcium channels is required for gap junction-mediated intercellular calcium signaling in osteoblastic cells

NASA Technical Reports Server (NTRS)

Jorgensen, Niklas Rye; Teilmann, Stefan Cuoni; Henriksen, Zanne; Civitelli, Roberto; Sorensen, Ole Helmer; Steinberg, Thomas H.

2003-01-01

The propagation of mechanically induced intercellular calcium waves (ICW) among osteoblastic cells occurs both by activation of P2Y (purinergic) receptors by extracellular nucleotides, resulting in "fast" ICW, and by gap junctional communication in cells that express connexin43 (Cx43), resulting in "slow" ICW. Human osteoblastic cells transmit intercellular calcium signals by both of these mechanisms. In the current studies we have examined the mechanism of slow gap junction-dependent ICW in osteoblastic cells. In ROS rat osteoblastic cells, gap junction-dependent ICW were inhibited by removal of extracellular calcium, plasma membrane depolarization by high extracellular potassium, and the L-type voltage-operated calcium channel inhibitor, nifedipine. In contrast, all these treatments enhanced the spread of P2 receptor-mediated ICW in UMR rat osteoblastic cells. Using UMR cells transfected to express Cx43 (UMR/Cx43) we confirmed that nifedipine sensitivity of ICW required Cx43 expression. In human osteoblastic cells, gap junction-dependent ICW also required activation of L-type calcium channels and influx of extracellular calcium.

On the sub-band gap optical absorption in heat treated cadmium sulphide thin film deposited on glass by chemical bath deposition technique

NASA Astrophysics Data System (ADS)

Chattopadhyay, P.; Karim, B.; Guha Roy, S.

2013-12-01

The sub-band gap optical absorption in chemical bath deposited cadmium sulphide thin films annealed at different temperatures has been critically analyzed with special reference to Urbach relation. It has been found that the absorption co-efficient of the material in the sub-band gap region is nearly constant up to a certain critical value of the photon energy. However, as the photon energy exceeds the critical value, the absorption coefficient increases exponentially indicating the dominance of Urbach rule. The absorption coefficients in the constant absorption region and the Urbach region have been found to be sensitive to annealing temperature. A critical examination of the temperature dependence of the absorption coefficient indicates two different kinds of optical transitions to be operative in the sub-band gap region. After a careful analyses of SEM images, energy dispersive x-ray spectra, and the dc current-voltage characteristics, we conclude that the absorption spectra in the sub-band gap domain is possibly associated with optical transition processes involving deep levels and the grain boundary states of the material.

Improved High/Low Junction Silicon Solar Cell

NASA Technical Reports Server (NTRS)

Neugroschel, A.; Pao, S. C.; Lindholm, F. A.; Fossum, J. G.

1986-01-01

Method developed to raise value of open-circuit voltage in silicon solar cells by incorporating high/low junction in cell emitter. Power-conversion efficiency of low-resistivity silicon solar cell considerably less than maximum theoretical value mainly because open-circuit voltage is smaller than simple p/n junction theory predicts. With this method, air-mass-zero opencircuit voltage increased from 600 mV level to approximately 650 mV.

Comparison of the Josephson Voltage Standards of the NIMT and the BIPM (part of the ongoing BIPM key comparison BIPM.EM-K10.b)

NASA Astrophysics Data System (ADS)

Solve, S.; Chayramy, R.; Stock, M.; Pimsut, S.; Rujirat, N.

2016-01-01

A comparison of the Josephson array voltage standards of the Bureau International des Poids et Mesures (BIPM) and the National Institute of Metrology - (Thailand), NIMT, was carried out in November 2015 at the level of 10 V. For this exercise, options A and B of the BIPM.EM-K10.b comparison protocol were applied. Option B required the BIPM to provide a reference voltage for measurement by the NIMT using its Josephson standard with its own measuring device. Option A required the NIMT to provide a reference voltage with its Josephson voltage standard for measurement by the BIPM using an analogue nanovoltmeter and associated measurement loop. In all cases the BIPM array was kept floating from ground. The final results were in good agreement within the combined relative standard uncertainty of 2.6 parts in 1010 for the nominal voltage of 10 V. Main text To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/. The final report has been peer-reviewed and approved for publication by the CCEM, according to the provisions of the CIPM Mutual Recognition Arrangement (CIPM MRA).

Design of an improved RCD buffer circuit for full bridge circuit

NASA Astrophysics Data System (ADS)

Yang, Wenyan; Wei, Xueye; Du, Yongbo; Hu, Liang; Zhang, Liwei; Zhang, Ou

2017-05-01

In the full bridge inverter circuit, when the switch tube suddenly opened or closed, the inductor current changes rapidly. Due to the existence of parasitic inductance of the main circuit. Therefore, the surge voltage between drain and source of the switch tube can be generated, which will have an impact on the switch and the output voltage. In order to ab sorb the surge voltage. An improve RCD buffer circuit is proposed in the paper. The peak energy will be absorbed through the buffer capacitor of the circuit. The part energy feedback to the power supply, another part release through the resistor in the form of heat, and the circuit can absorb the voltage spikes. This paper analyzes the process of the improved RCD snubber circuit, According to the specific parameters of the main circuit, a reasonable formula for calculating the resistance capacitance is given. A simulation model will be modulated in Multisim, which compared the waveform of tube voltage and the output waveform of the circuit without snubber circuit with the improved RCD snubber circuit. By comparing and analyzing, it is proved that the improved buffer circuit can absorb surge voltage. Finally, experiments are demonstrated to validate that the correctness of the RC formula and the improved RCD snubber circuit.

Applicability of Generalized Peek's Law to Scaling of Corona Onset Voltages in Electropositive Gases

NASA Astrophysics Data System (ADS)

Li, Yan-Ming

2008-10-01

We have developed the steady state positive corona model with the ionization zone physics in the point-plane configuration. The geometry is axisymmetric, consisting of a pointed anode of small tip radius and a planar cathode. The model solves the Poisson equation, drift dominated electron and the positive ion transport equations with the nonlinear Townsend ionization source terms, to give the complete electric field, electron and positive ion density distributions. The corona plasma properties can be determined as function of discharge current, ranging from the pico-ampere up to a milli-ampere. The calculated voltage-current characteristics obeyed the Townsend equation, agreeing with the general experimental observations. The model is applied to different electropositive gases, argon, xenon, nitrogen and mercury. Corona onset potentials are determined based on the discharge voltages at very low currents. Extensive parametric study for argon positive corona with varying anode tip radius, gap distance and gas pressure has been completed. All the simulated corona onset voltages are very well described by the generalized Peek's Law [1]. At sufficiently high current in the range of 0.1 mA, discharge filament is formed near the anode tip. [1] Peek F. W., Dielectric Phenomena in High Voltage Engineering, McGraw Hill, New York (1929).

Delta connected resonant snubber circuit

DOEpatents

Lai, J.S.; Peng, F.Z.; Young, R.W. Sr.; Ott, G.W. Jr.

1998-01-20

A delta connected, resonant snubber-based, soft switching, inverter circuit achieves lossless switching during dc-to-ac power conversion and power conditioning with minimum component count and size. Current is supplied to the resonant snubber branches solely by the dc supply voltage through the main inverter switches and the auxiliary switches. Component count and size are reduced by use of a single semiconductor switch in the resonant snubber branches. Component count is also reduced by maximizing the use of stray capacitances of the main switches as parallel resonant capacitors. Resonance charging and discharging of the parallel capacitances allows lossless, zero voltage switching. In one embodiment, circuit component size and count are minimized while achieving lossless, zero voltage switching within a three-phase inverter. 36 figs.

Delta connected resonant snubber circuit

DOEpatents

Lai, Jih-Sheng; Peng, Fang Zheng; Young, Sr., Robert W.; Ott, Jr., George W.

1998-01-01

A delta connected, resonant snubber-based, soft switching, inverter circuit achieves lossless switching during dc-to-ac power conversion and power conditioning with minimum component count and size. Current is supplied to the resonant snubber branches solely by the dc supply voltage through the main inverter switches and the auxiliary switches. Component count and size are reduced by use of a single semiconductor switch in the resonant snubber branches. Component count is also reduced by maximizing the use of stray capacitances of the main switches as parallel resonant capacitors. Resonance charging and discharging of the parallel capacitances allows lossless, zero voltage switching. In one embodiment, circuit component size and count are minimized while achieving lossless, zero voltage switching within a three-phase inverter.

Measurement Of Gas Electron Multiplier (GEM) Detector Characteristics

NASA Astrophysics Data System (ADS)

Park, Seongtae; Baldelomar, Edwin; Park, Kwangjune; Sosebee, Mark; White, Andy; Yu, Jaehoon

2011-06-01

The High Energy Physics group of the University of Texas at Arlington has been developing gas electron multiplier detectors to use them as sensitive gap detectors in digital hadron calorimeters for the International Linear Collider, a future high energy particle accelerator. For this purpose, we constructed numerous GEM detectors that employ double GEM layers. In this study, two kinds of prototype GEM detectors were tested; one with 28×28 cm2 active area double GEM structure with a 3 mm drift gap, a 1 mm transfer gap and a 1 mm induction gap and the other with two 3×3 cm2 GEM foils in the amplifier stage with a 5 mm drift gap, a 2 mm transfer gap and a 1 mm induction gap. The detectors' characteristics from exposure to high-energy charged particles and other radiations were measured using cosmic rays and 55Fe radioactive source. From the 55Fe tests, we observed two well separated characteristic X-ray emission peaks and confirmed the detectors' functionality. We also measured chamber gains to be over 6000 at a high voltage of 395 V across each GEM electrode. The responses to cosmic rays show the spectra that fit well to Landau distributions as expected from minimum ionizing particles.

High voltage conditioning of the electrostatic deflector of MARA

NASA Astrophysics Data System (ADS)

Partanen, J.; Johansen, U.; Sarén, J.; Tuunanen, J.; Uusitalo, J.

2016-06-01

MARA is a new recoil mass separator in the Accelerator Laboratory of University of Jyväskylä (JYFL-ACCLAB) with a mass resolving power of 250 and an ion-optical configuration of QQQDEDM . In this paper the construction, control and conditioning of its electrostatic deflector are described. The deflector was designed for voltages up to 500 kV accross the gap, corresponding to a 3.6 MV/m field, to accomodate fusion reactions with inverse kinematics. Titanium electrodes with a beam dump opening in the anode are used. The conditioning procedure, which has been used repeatedly to take the deflector to 450 kV, is described, along with the safety systems and precautions that are in place.