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Sample records for manganese silicides

  1. Thermoelectric properties of higher manganese silicides

    NASA Astrophysics Data System (ADS)

    Tseng, Yu-Chih; Venkataraman, Vijay Shankar; Kee, Hae-Young

    2015-03-01

    Higher manganese silicides (HMS) are promising thermoelectric materials that may be broadly deployable because of the abundance of the constituent elements and their non-toxic nature. We study the thermoelectric properties of HMS using density functional theory calculations and tight-binding models to fit these calculations. We estimate charge carrier density and mobility, and compare with experimental data. Theoretically obtained thermal and electrical conductivities, and the Seebeck coefficients are presented. Possible scattering mechanisms and relations to figure of merit are also discussed. NSERC CREATE - HEATER Program.

  2. Ferromagnetic properties of manganese doped iron silicide

    NASA Astrophysics Data System (ADS)

    Ruiz-Reyes, Angel; Fonseca, Luis F.; Sabirianov, Renat

    We report the synthesis of high quality Iron silicide (FeSi) nanowires via Chemical Vapor Deposition (CVD). The materials exhibits excellent magnetic response at room temperature, especially when doped with manganese showing values of 2.0 X 10-04 emu for the FexMnySi nanowires. SEM and TEM characterization indicates that the synthesized nanowires have a diameter of approximately 80nm. MFM measurements present a clear description of the magnetic domains when the nanowires are doped with manganese. Electron Diffraction and XRD measurements confirms that the nanowires are single crystal forming a simple cubic structure with space group P213. First-principle calculations were performed on (111) FeSi surface using the Vienna ab initio simulation package (VASP). The exchange correlations were treated under the Ceperley-Alder (CA) local density approximation (LDA). The Brillouin Zone was sampled with 8x8x1 k-point grid. A total magnetic moment of about 10 μB was obtained for three different surface configuration in which the Iron atom nearest to the surface present the higher magnetization. To study the effect of Mn doping, Fe atom was replaced for a Mn. Stronger magnetization is presented when the Mn atom is close to the surface. The exchange coupling constant have been evaluated calculating the energy difference between the ferromagnetic and anti-ferromagnetic configurations.

  3. New Manganese Silicide Mineral Phase in an Interplanetary Dust Particle

    NASA Technical Reports Server (NTRS)

    Nakamura-Messenger, K.; Keller, L. P.; Clemett, S. J.; Jones, J. H.; Palma, R. L.; Pepin, R. O.; Kloeck, W.; Zolensky, M. E.; Messenger, S.

    2008-01-01

    Comet 26P/Grigg-Skjellerup was identified as a source of an Earth-crossing dust stream with low Earth-encounter velocities, with peak anticipated fluxes during April in 2003 and 2004 [1]. In response to this prediction, NASA performed dedicated stratospheric dust collections using high altitude aircraft to target potential interplanetary dust particles (IDPs) from this comet stream in April 2003. Several IDPs from this collection have shown unusually low noble gas abundances [2] consistent with the predicted short space exposure ages of Grigg-Skjellerup dust particles [1]. High abundances of large D enrichments [3] and presolar grains [4] in IDPs from this collection are also consistent with an origin from the comet Grigg-Skjellerup. Here we report a new mineral from one of the cluster IDPs of the "Grigg-Skjellerup" collection, L2055. Our report focuses on an unusual manganese-iron-chromium silicide phase that, to our knowledge, has not been observed previously in nature. This unique phase may also shed light on the genesis of the enigmatic low-Fe,Mn-enriched (LIME) olivine that has been previously reported in IDPs and meteorites [5].

  4. Magnetic phase transitions and electronic structure of the manganese silicides

    NASA Astrophysics Data System (ADS)

    Vinokurova, L.; Ivanov, V.; Kulatov, E.; Vlasov, A.

    1990-12-01

    The results of the experimental investigations of physical properties of the single crystals of Mn 5Si 3 and MnSi≈ l.7 doped by Ge and Cr are presented. For the first time an existence in Mn 5Si 3 the first order metamagnetic transition have been observed. From the experimental data it is found that the properties of the induced ferromagnetic state in Mn 5Si 3 and the doped higher manganese suicides can be interpreted on the basis of the band model. Theoretical calculations conclude that the band character of magnetism in Mn 5Si 3 is due to Mn I atoms in 4(d) positions while atoms in 6(g) positions are covalent bonded and more localized.

  5. Magnesium and Manganese Silicides For Efficient And Low Cost Thermo-Electric Power Generation

    SciTech Connect

    Trivedi, Sudhir B.; Kutcher, Susan W.; Rosemeier, Cory A.; Mayers, David; Singh, Jogender

    2013-12-02

    Thermoelectric Power Generation (TEPG) is the most efficient and commercially deployable power generation technology for harvesting wasted heat from such things as automobile exhausts, industrial furnaces, and incinerators, and converting it into usable electrical power. We investigated the materials magnesium silicide (Mg2Si) and manganese silicide (MnSi) for TEG. MgSi2 and MnSi are environmentally friendly, have constituent elements that are abundant in the earth's crust, non-toxic, lighter and cheaper. In Phase I, we successfully produced Mg2Si and MnSi material with good TE properties. We developed a novel technique to synthesize Mg2Si with good crystalline quality, which is normally very difficult due to high Mg vapor pressure and its corrosive nature. We produced n-type Mg2Si and p-type MnSi nanocomposite pellets using FAST. Measurements of resistivity and voltage under a temperature gradient indicated a Seebeck coefficient of roughly 120 V/K on average per leg, which is quite respectable. Results indicated however, that issues related to bonding resulted in high resistivity contacts. Determining a bonding process and bonding material that can provide ohmic contact from room temperature to the operating temperature is an essential part of successful device fabrication. Work continues in the development of a process for reproducibly obtaining low resistance electrical contacts.

  6. Discovery of Brownleeite: a New Manganese Silicide Mineral in an Interplanetary Dust Particle

    NASA Technical Reports Server (NTRS)

    Keller, Lindsay P.; Nakamura-Messenger, Keiko; Clemett, Simon J.; Messenger, Scott; Jones, John H.; Palma, Russell L.; Pepin, Robert O.; Klock, Wolfgang; Zolensky, Michael E.; Tatsuoka, Hirokazu

    2011-01-01

    The Earth accretes approximately 40,000 tons of cosmic dust annually, originating mainly from the disintegration of comets and collisions among asteroids. This cosmic dust, also known as interplanetary dust particles (IDPs), is a subject of intense interest since it is made of the original building blocks of our Solar System. Although the specific parent bodies of IDPs are unknown, the anhydrous chondritic-porous IDPs (CP-IDPs) subset has been potentially linked to a cometary source. The CP-IDPs are extremely primitive materials based on their unequilibrated mineralogy, C-rich chemistry, and anomalous isotopic signatures. In particular, some CP-IDPs escaped the thermal, aqueous and impact shock processing that has modified or destroyed the original mineralogy of meteorites. Thus, the CP-IDPs represent some of the most primitive solar system materials available for laboratory study. Most CP-IDPs are comprised of minerals that are common on Earth. However, in the course of an examination of one of the CP-IDPs, we encountered three sub-micrometer sized grains of manganese silicide (MnSi), a phase that has heretofore not been found in nature. In the seminar, we would like to focus on IDP studies and this manganese silicide phase that has been approved as the first new mineral identified from a comet by the International Mineralogical Association (IMA) in 2008. The mineral is named in honour of Donald E. Brownlee, an American astronomer and a founder of the field of cosmic dust research who is the principal investigator of the NASA Stardust Mission that collected dust samples from Comet 81P/Wild-2 and returned them to Earth. Much of our current view and understanding of the early solar system would not exist without the pioneering work of professor Don Brownlee in the study of IDPs.

  7. Enhanced power factor of higher manganese silicide via melt spin synthesis method

    DOE PAGES

    Shi, Xiaoya; Shi, Xun; Li, Yulong; ...

    2014-12-30

    We report on the thermoelectric properties of the Higher Manganese Silicide MnSi₁.₇₅ (HMS) synthesized by means of a one-step non-equilibrium method. The ultrahigh cooling rate generated from the melt-spin technique is found to be effective in reducing second phases, which are inevitable during the traditional solid state diffusion processes. Aside from being detrimental to thermoelectric properties, second phases skew the revealing of the intrinsic properties of this class of materials, for example the optimal level of carrier concentration. With this melt-spin sample, we are able to formulate a simple model based on a single parabolic band that can well describemore » the carrier concentration dependence of the Seebeck coefficient and power factor of the data reported in the literature. An optimal carrier concentration around 5x10²⁰ cm⁻³ at 300 K is predicted according to this model. The phase-pure melt-spin sample shows the largest power factor at high temperature, resulting in the highest zT value among the three samples in this paper; the maximum value is superior to those reported in the literatures.« less

  8. Enhanced power factor of higher manganese silicide via melt spin synthesis method

    SciTech Connect

    Shi, Xiaoya; Shi, Xun; Li, Yulong; He, Ying; Chen, Lidong; Li, Qiang

    2014-12-30

    We report on the thermoelectric properties of the Higher Manganese Silicide MnSi₁.₇₅ (HMS) synthesized by means of a one-step non-equilibrium method. The ultrahigh cooling rate generated from the melt-spin technique is found to be effective in reducing second phases, which are inevitable during the traditional solid state diffusion processes. Aside from being detrimental to thermoelectric properties, second phases skew the revealing of the intrinsic properties of this class of materials, for example the optimal level of carrier concentration. With this melt-spin sample, we are able to formulate a simple model based on a single parabolic band that can well describe the carrier concentration dependence of the Seebeck coefficient and power factor of the data reported in the literature. An optimal carrier concentration around 5x10²⁰ cm⁻³ at 300 K is predicted according to this model. The phase-pure melt-spin sample shows the largest power factor at high temperature, resulting in the highest zT value among the three samples in this paper; the maximum value is superior to those reported in the literatures.

  9. The Effect of Microstructure on the Thermoelectric Properties of Polycrystalline Higher Manganese Silicides

    NASA Astrophysics Data System (ADS)

    An, Tae-Ho; Choi, Soon-Mok; Seo, Won-Seon; Park, Chan; Kim, Il-Ho; Kim, Sun-Uk

    2013-10-01

    In order to obtain single-phase higher manganese silicides (HMS) and investigate the effect of sintering conditions on the thermoelectric properties of a HMS system, HMS compounds were synthesized using a vacuum induction melting method and sintered using spark plasma sintering (SPS) and hot pressing methods. Single-phase HMS with a small amount of second phases was obtained in all of the HMS samples produced. Changes in the electrical conductivity and Seebeck coefficient of the HMS were observed when the sintering temperature was changed, which can be attributed to the presence of the second phases. Similar changes of thermoelectric properties were observed in both the SPS and hot-pressed samples. However, the electrical conductivity and Seebeck coefficient of HMS samples (SPS-HMS) were higher than those of the hot-pressed samples, which can be attributed to SPS's shorter holding time and its ability to control the diffusion rate. The SPS-HMS sample sintered at 1123 K (1123 K SPS-HMS) had a higher figure of merit than any other sample although the sample had a lower power factor. The high value of the figure of merit of the sample can be attributed to its low thermal conductivity. The highest figure of merit value of 0.41 was measured at 850 K in the 1123 K SPS-HMS, which is comparable to the results reported earlier. The results of the present study can be used to optimize the fabrication process of HMS thermoelectric materials.

  10. Approaching the Minimum Thermal Conductivity in Rhenium-Substituted Higher Manganese Silicides

    SciTech Connect

    Chen, Xi; Girard, S. N.; Meng, F.; Lara-Curzio, Edgar; Jin, S; Goodenough, J. B.; Zhou, J. S.; Shi, L

    2014-01-01

    Higher manganese silicides (HMS) made of earth-abundant and non-toxic elements are regarded as promising p-type thermoelectric materials because their complex crystal structure results in low lattice thermal conductivity. It is shown here that the already low thermal conductivity of HMS can be reduced further to approach the minimum thermal conductivity via partial substitu- tion of Mn with heavier rhenium (Re) to increase point defect scattering. The solubility limit of Re in the obtained RexMn1 xSi1.8 is determined to be about x = 0.18. Elemental inhomogeneity and the formation of ReSi1.75 inclusions with 50 200 nm size are found within the HMS matrix. It is found that the power factor does not change markedly at low Re content of x 0.04 before it drops considerably at higher Re contents. Compared to pure HMS, the reduced lattice thermal conductivity in RexMn1 xSi1.8 results in a 25% increase of the peak figure of merit ZT to reach 0.57 0.08 at 800 K for x = 0.04. The suppressed thermal conductivity in the pure RexMn1 xSi1.8 can enable further investigations of the ZT limit of this system by exploring different impurity doping strategies to optimize the carrier concentration and power factor.

  11. Phase Formation and Thermoelectric Properties of Doped Higher Manganese Silicides (Mn15Si26)

    NASA Astrophysics Data System (ADS)

    Lee, Hwijong; Kim, Gwansik; Lee, Byunghun; Lee, Kyu Hyoung; Lee, Wooyoung

    2016-10-01

    We herein report substitutional doping effects on the electronic and thermal transport properties of higher manganese silicides (HMS) Mn15Si26. Polycrystalline bulks of Mn0.972A0.028Si1.80 and MnSi1.75B0.028 (A = V, Cr, Mo/B = Al, Ge) were fabricated by a solid-state reaction combined with the spark plasma sintering technique, and their thermoelectric properties were evaluated. We found that thermoelectric performance of Mn15Si26 was significantly enhanced due to the simultaneous improvement in electronic transport and phonon scattering via partial substitution of foreign atoms at Mn- and/or Si-sites. Through the small amount of Cr doping at the Mn-site and Al and Ge doping at the Si-site, the power factor was improved due to enhancement in density of the state's effective mass. Thermal transport properties could be also manipulated due to the point defect phonon scattering effect, and reduced lattice thermal conductivity was obtained with Ge-doped HMS. As a consequence, the maximum dimensionless figure of merit ZT of 0.64 at 773 K (increased 50% compared to undoped Mn15Si26) was obtained in Ge-doped Mn15Si26.

  12. Phase Formation and Thermoelectric Properties of Doped Higher Manganese Silicides (Mn15Si26)

    NASA Astrophysics Data System (ADS)

    Lee, Hwijong; Kim, Gwansik; Lee, Byunghun; Lee, Kyu Hyoung; Lee, Wooyoung

    2017-05-01

    We herein report substitutional doping effects on the electronic and thermal transport properties of higher manganese silicides (HMS) Mn15Si26. Polycrystalline bulks of Mn0.972A0.028Si1.80 and MnSi1.75B0.028 (A = V, Cr, Mo/B = Al, Ge) were fabricated by a solid-state reaction combined with the spark plasma sintering technique, and their thermoelectric properties were evaluated. We found that thermoelectric performance of Mn15Si26 was significantly enhanced due to the simultaneous improvement in electronic transport and phonon scattering via partial substitution of foreign atoms at Mn- and/or Si-sites. Through the small amount of Cr doping at the Mn-site and Al and Ge doping at the Si-site, the power factor was improved due to enhancement in density of the state's effective mass. Thermal transport properties could be also manipulated due to the point defect phonon scattering effect, and reduced lattice thermal conductivity was obtained with Ge-doped HMS. As a consequence, the maximum dimensionless figure of merit ZT of 0.64 at 773 K (increased 50% compared to undoped Mn15Si26) was obtained in Ge-doped Mn15Si26.

  13. Enhanced power factor of higher manganese silicide via melt spin synthesis method

    SciTech Connect

    Shi, Xiaoya; Li, Qiang; Shi, Xun; Chen, Lidong; Li, Yulong; He, Ying

    2014-12-28

    We report on the thermoelectric properties of the higher manganese silicide MnSi{sub 1.75} synthesized by means of a one-step non-equilibrium method. The ultrahigh cooling rate generated from the melt-spin technique is found to be effective in reducing second phases, which are inevitable during the traditional solid state diffusion processes. Aside from being detrimental to thermoelectric properties, second phases skew the revealing of the intrinsic properties of this class of materials, for example, the optimal level of carrier concentration. With this melt-spin sample, we are able to formulate a simple model based on a single parabolic band that can well describe the carrier concentration dependence of the Seebeck coefficient and power factor of the data reported in the literature. An optimal carrier concentration around 5 × 10{sup 20 }cm{sup −3} at 300 K is predicted according to this model. The phase-pure melt-spin sample shows the largest power factor at high temperature, resulting in the highest zT value among the three samples in this paper.

  14. Molybdenum, Tungsten, and Aluminium Substitution for Enhancement of the Thermoelectric Performance of Higher Manganese Silicides

    NASA Astrophysics Data System (ADS)

    Nhi Truong, D. Y.; Berthebaud, David; Gascoin, Franck; Kleinke, Holger

    2015-10-01

    An easy and efficient process involving ball milling under soft conditions and spark plasma sintering was used to synthesize higher manganese silicide (HMS)-based compounds, for example MnSi1.75Ge0.02, with different molybdenum, tungsten, and aluminium substitution. The x-ray diffraction patterns of the samples after sintering showed the main phase to be HMS with the presence of some side products. Molybdenum substitution enlarges the unit cells more than tungsten substitution, owing to its greater solubility in the HMS structure, whereas substitution with aluminium did not substantially alter the cell parameters. The electrical resistivity of HMS-based compounds was reduced by <10% by this substitution, because of increased carrier concentrations. Changes of the Seebeck coefficient were insignificant after molybdenum and aluminium substitution whereas tungsten substitution slightly reduced the thermopower of the base material by approximately 8% over the whole temperature range; this was ascribed to reduced carrier mobility as a result of enhanced scattering. Substitution with any combination of two of these elements resulted in no crucial modification of the electrical properties of the base material. Large decreases of lattice thermal conductivity were observed, because of enhanced phonon scattering, with the highest reduction up to 25% for molybdenum substitution; this resulted in a 20% decrease of total thermal conductivity, which contributed to improvement of the figure of merit ZT of the HMS-based materials. The maximum ZT value was approximately 0.40 for the material with 2 at.% molybdenum substitution at the Mn sites.

  15. Twisting phonons in complex crystals with quasi-one-dimensional substructures [Twisting Phonons in Higher Manganese Silicides with a Complex Nowotny Chimney Ladder Structure

    SciTech Connect

    Abernathy, Douglas L.; Ma, Jie; Yan, Jiaqiang; Delaire, Olivier A.; Chen, Xi; Weathers, Annie; Mukhopadhyay, Saikat; Shi, Li

    2015-04-15

    A variety of crystals contain quasi-one-dimensional substructures, which yield distinctive electronic, spintronic, optical and thermoelectric properties. There is a lack of understanding of the lattice dynamics that influences the properties of such complex crystals. Here we employ inelastic neutron scatting measurements and density functional theory calculations to show that numerous low-energy optical vibrational modes exist in higher manganese silicides, an example of such crystals. These optical modes, including unusually low-frequency twisting motions of the Si ladders inside the Mn chimneys, provide a large phase space for scattering acoustic phonons. A hybrid phonon and diffuson model is proposed to explain the low and anisotropic thermal conductivity of higher manganese silicides and to evaluate nanostructuring as an approach to further suppress the thermal conductivity and enhance the thermoelectric energy conversion efficiency. This discovery offers new insights into the structure-property relationships of a broad class of materials with quasi-one-dimensional substructures for various applications.

  16. Twisting phonons in complex crystals with quasi-one-dimensional substructures [Twisting Phonons in Higher Manganese Silicides with a Complex Nowotny Chimney Ladder Structure

    DOE PAGES

    Abernathy, Douglas L.; Ma, Jie; Yan, Jiaqiang; ...

    2015-04-15

    A variety of crystals contain quasi-one-dimensional substructures, which yield distinctive electronic, spintronic, optical and thermoelectric properties. There is a lack of understanding of the lattice dynamics that influences the properties of such complex crystals. Here we employ inelastic neutron scatting measurements and density functional theory calculations to show that numerous low-energy optical vibrational modes exist in higher manganese silicides, an example of such crystals. These optical modes, including unusually low-frequency twisting motions of the Si ladders inside the Mn chimneys, provide a large phase space for scattering acoustic phonons. A hybrid phonon and diffuson model is proposed to explain themore » low and anisotropic thermal conductivity of higher manganese silicides and to evaluate nanostructuring as an approach to further suppress the thermal conductivity and enhance the thermoelectric energy conversion efficiency. This discovery offers new insights into the structure-property relationships of a broad class of materials with quasi-one-dimensional substructures for various applications.« less

  17. Bibliography on silicides. Special report

    SciTech Connect

    Gilp, B.F.; Desai, P.D.; Ho, C.Y.

    1993-07-01

    This report is an annotated bibliography of over 750 documents on silicides. Documents published from 1952 to early 1993 are covered. Bibliographic information is organized in alphabetical order by silicide type, i.e. chromium silicides, cobalt silicides, etc. Within each chapter information is reported for specific silicides. A miscellaneous section contains silicides which are neither specifically identified nor warrant a separate section. Chapters are also included for commercially designated silicides and for those silicides which are neither properly identified nor have enough data to warrant a separate chapter. Each section is complete and selfcontained for efficient use. Bibliography, Silicides, Coatings, Molybdenum silicides, Tantalum silicides, Titanium silicides, Tungsten silicides, Vanadium silicides, Chromium silicides, Zirconium silicides, Iron silicides, Niobium silicides.

  18. Manganese

    SciTech Connect

    Major-Sosias, M.A.

    1996-10-01

    Manganese (Mn) is a hard, brittle, gray-white transition metal, with the most numerous oxidation states of the elements in the first series of the Periodic Table. Since the manganese atom can donate up to seven electrons from its outer two shells, manganese compounds exist with valences from -3 to +7, the most common being +2, +4, and +7. Due to its sulfur-fixing, deoxidizing, and alloying properties, as well as its low cost, the principal commercial application for manganese is in iron and steel production. Manganese is also employed in non-ferrous metallurgy, batteries and chemical processes. Although potentially harmful to the respiratory and nervous systems, manganese is an essential element for animals and humans, and a micronutrient for plants.

  19. Manganese

    Integrated Risk Information System (IRIS)

    Manganese ; CASRN 7439 - 96 - 5 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncarcinogenic Effect

  20. Ceramic-silicide composites

    SciTech Connect

    Petrovic, J.J.

    1998-12-01

    The area of ceramic-silicide composites represents a merging of structural ceramics and structural silicides. Such ceramic-silicide composites can possess the desirable characteristics of both classes of compounds. Important structural ceramics are materials such as Si{sub 3}N{sub 4}, SiC, Al{sub 2}O{sub 3}, and ZrO{sub 2}, which possess covalent, ionic, or mixed covalent-ionic atomic bonding. An important structural silicide is MoSi{sub 2}, which possesses mixed covalent-metallic bonding. The arena of ceramic-silicide composites encompasses both composites where the structural silicide is the matrix and the structural ceramic is the reinforcement, and composites where the structural ceramic is the matrix and the structural silicide is the reinforcement. In the former area, MoSi{sub 2}-SiC, MoSi{sub 2}-ZrO{sub 2}, and MoSi{sub 2}-Al{sub 2}O{sub 3} composites are discussed. In the latter area, Si{sub 3}N{sub 4}-MoSi{sub 2} composites are described.

  1. Metal silicide nanowires

    NASA Astrophysics Data System (ADS)

    Chen, Lih-Juann; Wu, Wen-Wei

    2015-07-01

    The growth, properties and applications of metal silicide nanowires (NWs) have been extensively investigated. The investigations have led to significant advance in the understanding of one-dimensional (1D) metal silicide systems. For example, CoSi is paramagnetic in bulk form, but ferromagnetic in NW geometry. In addition, the helimagnetic phase and skyrmion state in MnSi are stabilized by NW morphology. The influencing factors on the growth of silicide phase have been elucidated for Ni-Si, Pt-Si, and Mn-Si systems. Promising results were obtained for spintronics, non-volatile memories, field emitter, magnetoresistive sensor, thermoelectric generator and solar cells. However, the main thrust has been in microelectronic devices and integrated circuits. Transistors of world-record small size have been fabricated. Reconfigurable Si NW transistors, dually active Si NW transistors and circuits with equal electron and hole transport have been demonstrated. Furthermore, multifunctional devices and logic gates with undoped Si NWs were reported. It is foreseen that practical applications will be realized in the near future.

  2. Synthetic Development of Metal Silicide Nanowires for Thermoelectric and Spintronic Applications

    NASA Astrophysics Data System (ADS)

    Higgins, Jeremy Michael

    2011-12-01

    Nanomaterials, including nanowires (NWs), are a new class of materials with the potential to lead to major changes in many aspects of human society. Innumerable applications for nanomaterials are envisioned or are being realized now. However, such new functionalities are and will continue to be predicated on our ability to precisely synthesize nanomaterials, a skill yet undeveloped in a majority of chemical systems. Metal silicides are a class of refractory intermetallic compounds composed of abundant elements with widely varying properties that are currently employed in a large range of technological applications. In this thesis, I describe my exploration of metal silicide NWs, particularly those in the Mn-Si binary system, in order to develop rational synthetic strategies for accessing binary and ternary silicide NWs and characterize their potential for thermoelectric and spintronic applications. Chapter 1 develops a common set of ideas and a common language before reviewing the current "state of the art" in silicide NW synthesis, exploring a number of the mysteries still surrounding silicide NW synthesis, and presenting silicide NW applications. Chapter 2 depicts the use of Mn(CO) 5SiCl3 as the vapor phase precursor to synthesize higher manganese silicide NWs (also known as HMS, MnSi˜1.7 MnSi2--x) for the first time, the identification of the NW subphase as Mn19Si33, and conductivity measurement on HMS NWs revealing bulk-like behavior. Chapter 3 describes employing MnCl 2 as the precursor for the first successful synthesis of MnSi NWs and transverse magnetoresistance measurements on these MnSi NWs to observe the signatures of helimagnetism in NWs for the first time. Chapter 4 is a systematic examination of silicide NW synthesis by single source precursor chemical vapor deposition, highlighting the complex interplay of substrate diffusion and vapor phase reactivity giving rise to material incorporation in silicide NWs. Chapter 5 details the direct reaction of Mn

  3. Surface morphology of erbium silicide

    NASA Technical Reports Server (NTRS)

    Lau, S. S.; Pai, C. S.; Wu, C. S.; Kuech, T. F.; Liu, B. X.

    1982-01-01

    The surface of rare-earth silicides (Er, Tb, etc.), formed by the reaction of thin-film metal layers with a silicon substrate, is typically dominated by deep penetrating, regularly shaped pits. These pits may have a detrimental effect on the electronic performance of low Schottky barrier height diodes utilizing such silicides on n-type Si. This study suggests that contamination at the metal-Si or silicide-Si interface is the primary cause of surface pitting. Surface pits may be reduced in density or eliminated entirely through either the use of Si substrate surfaces prepared under ultrahigh vacuum conditions prior to metal deposition and silicide formation or by means of ion irradiation techniques. Silicide layers formed by these techniques possess an almost planar morphology.

  4. Silicide surface phases on gold

    NASA Technical Reports Server (NTRS)

    Green, A. K.; Bauer, E.

    1981-01-01

    The crystalline silicide layers formed on (111) and (100) surfaces of Au films on various Si single-crystal substrates are studied by LEED and AES in conjunction with sputter-depth profiling as a function of annealing temperature. On the (111) surface, three basic silicide structures are obtained corresponding to layers of various thicknesses as obtained by different preparation conditions. The (100) surface shows only two different structures. None of the structures is compatible with the various bulk silicide structures deduced from X-ray diffraction. Using LEED as a criterion for the presence or absence of silicide on the surface, smaller layer thicknesses are obtained than reported previously on the basis of AES studies.

  5. Silicide surface phases on gold

    NASA Technical Reports Server (NTRS)

    Green, A. K.; Bauer, E.

    1981-01-01

    The crystalline silicide layers formed on (111) and (100) surfaces of Au films on various Si single-crystal substrates are studied by LEED and AES in conjunction with sputter-depth profiling as a function of annealing temperature. On the (111) surface, three basic silicide structures are obtained corresponding to layers of various thicknesses as obtained by different preparation conditions. The (100) surface shows only two different structures. None of the structures is compatible with the various bulk silicide structures deduced from X-ray diffraction. Using LEED as a criterion for the presence or absence of silicide on the surface, smaller layer thicknesses are obtained than reported previously on the basis of AES studies.

  6. High temperature structural silicides

    SciTech Connect

    Petrovic, J.J.

    1997-03-01

    Structural silicides have important high temperature applications in oxidizing and aggressive environments. Most prominent are MoSi{sub 2}-based materials, which are borderline ceramic-intermetallic compounds. MoSi{sub 2} single crystals exhibit macroscopic compressive ductility at temperatures below room temperature in some orientations. Polycrystalline MoSi{sub 2} possesses elevated temperature creep behavior which is highly sensitive to grain size. MoSi{sub 2}-Si{sub 3}N{sub 4} composites show an important combination of oxidation resistance, creep resistance, and low temperature fracture toughness. Current potential applications of MoSi{sub 2}-based materials include furnace heating elements, molten metal lances, industrial gas burners, aerospace turbine engine components, diesel engine glow plugs, and materials for glass processing.

  7. Progress in doping of ruthenium silicide (Ru2Si3)

    NASA Technical Reports Server (NTRS)

    Vining, C. B.; Allevato, C. E.

    1992-01-01

    Ruthenium silicide is currently under development as a promising thermoelectric material suitable for space power applications. Key to realizing the potentially high figure of merit values of this material is the development of appropriate doping techniques. In this study, manganese and iridium have been identified as useful p- and n-type dopants, respectively. Resistivity values have been reduced by more than 3 orders of magnitude. Anomalous Hall effect results, however, complicate interpretation of some of the results and further effort is required to achieve optimum doping levels.

  8. Progress in doping of ruthenium silicide (Ru2Si3)

    NASA Technical Reports Server (NTRS)

    Vining, C. B.; Allevato, C. E.

    1992-01-01

    Ruthenium silicide is currently under development as a promising thermoelectric material suitable for space power applications. Key to realizing the potentially high figure of merit values of this material is the development of appropriate doping techniques. In this study, manganese and iridium have been identified as useful p- and n-type dopants, respectively. Resistivity values have been reduced by more than 3 orders of magnitude. Anomalous Hall effect results, however, complicate interpretation of some of the results and further effort is required to achieve optimum doping levels.

  9. Composition of CVD tungsten silicides

    SciTech Connect

    Hara, T.; Takahashi, H.; Ishizawa, Y.

    1987-05-01

    The composition of tungsten silicide (WSi/sub x/) deposited by chemical vapor deposition on silicon and silicon dioxide substrates was studied. The composition x changed from 2.7 to 2.2 with varying WF/sub 6/ flow rate from 6 to 20 cm/sup 3//min in the deposition on silicon. When annealing was performed at 1000C, the dissociation of excess silicon occurred from the nonstoichiometric silicide in the layer on the silicon. As a result, the composition of each layer, which was different when deposited, tended toward the same composition of around 2.1. This result indicated the formation of near-stoichiometric silicide as a result of annealing.

  10. Magnesium silicide intermetallic alloys

    NASA Astrophysics Data System (ADS)

    Li, Gh.; Gill, H. S.; Varin, R. A.

    1993-11-01

    Methods of induction melting an ultra-low-density magnesium silicide (Mg2Si) intermetallic and its alloys and the resulting microstructure and microhardness were studied. The highest quality ingots of Mg2Si alloys were obtained by triple melting in a graphite crucible coated with boron nitride to eliminate reactivity, under overpressure of high-purity argon (1.3 X 105 Pa), at a temperature close to but not exceeding 1105 °C ± 5 °C to avoid excessive evaporation of Mg. After establishing the proper induction-melting conditions, the Mg-Si binary alloys and several Mg2Si alloys macroalloyed with 1 at. pct of Al, Ni, Co, Cu, Ag, Zn, Mn, Cr, and Fe were induction melted and, after solidification, investigated by optical microscopy and quantitative X-ray energy dispersive spectroscopy (EDS). Both the Mg-rich and Si-rich eutectic in the binary alloys exhibited a small but systematic increase in the Si content as the overall composition of the binary alloy moved closer toward the Mg2Si line compound. The Vickers microhardness (VHN) of the as-solidified Mg-rich and Si-rich eutectics in the Mg-Si binary alloys decreased with increasing Mg (decreasing Si) content in the eutectic. This behavior persisted even after annealing for 75 hours at 0.89 pct of the respective eutectic temperature. The Mg-rich eutectic in the Mg2Si + Al, Ni, Co, Cu, Ag, and Zn alloys contained sections exhibiting a different optical contrast and chemical composition than the rest of the eutectic. Some particles dispersed in the Mg2Si matrix were found in the Mg2Si + Cr, Mn, and Fe alloys. The EDS results are presented and discussed and compared with the VHN data.

  11. The oxidation of titanium silicide

    NASA Astrophysics Data System (ADS)

    Sandwick, Thom; Rajan, Krishna

    1990-11-01

    This paper investigates the morphology changes that occur with the oxidation of a ti-tanium silicide—polysilicon system. These changes were studied as a function of poly-silicon doping and silicide formation parameters. Emphasis was placed on transmission electron microscopy studies of the samples by planar and cross sectional techniques. Various surface analysis methods have also been used to characterize the films. This study helps to define the possible use and shortcomings of a self aligned titanium silicide insulator. The results show that varying quality insulators result, dependent largely on the initial conditions of the titanium silicide. After oxidation the Auger and TEM anal-ysis show that in all cases some form of silicon dioxide was created, but typically a considerable amount of titanium oxide was also present. For instance, it was apparent that more titanium oxide formed on the samples RTA’ed for 1 min at 700° C than the 5 min at 800° C and considerably more on the arsenic doped sample than the boron doped. The silicide also had morphology changes as the result of the oxidation. There was a phase change from the C49 to C54 phase for the 1 min at 700° C samples as would be expected at the time and temperature of the oxidation. There also was a sig-nificant amount of agglomeration and epitaxial growth observed. Further work is re-quired to completely characterize these phenomena.

  12. Improved high-temperature silicide coatings

    NASA Technical Reports Server (NTRS)

    Klopp, W. D.; Stephens, J. R.; Stetson, A. R.; Wimber, R. T.

    1969-01-01

    Special technique for applying silicide coatings to refractory metal alloys improves their high-temperature protective capability. Refractory metal powders mixed with a baked-out organic binder and sintered in a vacuum produces a porous alloy layer on the surface. Exposing the layer to hot silicon converts it to a silicide.

  13. The Effect of the Dose and Energy of a Pre-Silicide Implant on Nickel Silicide Formation

    SciTech Connect

    Rice, Jeffrey H.

    2008-11-03

    Pre-silicide implants have been used to increase the thermal stability of nickel silicide (NiSi) and to improve device performance. This study evaluates the effect of the dose, energy and species of a pre-silicide ion implant on NiSi phase formation. The resulting silicide was evaluated using sheet resistance, scanning electron Microscope (SEM) cross-sections, and Rutherford Backscattering Spectroscopy (RBS) analysis. It was found that a high dose argon implant will completely inhibit the silicide formation.

  14. Synthesis and design of silicide intermetallic materials

    SciTech Connect

    Petrovic, J.J.; Castro, R.G.; Butt, D.P.; Park, Y.; Hollis, K.J.; Kung, H.H.

    1998-11-01

    The overall objective of this program is to develop structural silicide-based materials with optimum combinations of elevated temperature strength/creep resistance, low temperature fracture toughness, and high temperature oxidation and corrosion resistance for applications of importance to the U.S. processing industry. A further objective is to develop silicide-based prototype industrial components. The ultimate aim of the program is to work with industry to transfer the structural silicide materials technology to the private sector in order to promote international competitiveness in the area of advanced high temperature materials and important applications in major energy-intensive U.S. processing industries.

  15. Ensuring the Consistency of Silicide Coatings

    NASA Technical Reports Server (NTRS)

    Ramani, V.; Lampson, F. K.

    1982-01-01

    Diagram specifies optimum fusing time for given thicknesses of refractory metal-silicide coatings on columbium C-103 substrates. Adherence to indicated fusion times ensures consistent coatings and avoids underdiffusion and overdiffusion. Accuracy of diagram has been confirmed by tests.

  16. Synthesis and Design of Silicide Intermetallic Materials

    SciTech Connect

    Petrovic, J.J.; Castro, R.G.; Vaidya, R.U.; Park, Y.

    1999-05-14

    The overall objective of this program is to develop structural silicide-based materials with optimum combinations of elevated temperature strength/creep resistance, low temperature fracture toughness, and high temperature oxidation and corrosion resistance for applications of importance to the US processing industry. A further objective is to develop silicide-based prototype industrial components. The ultimate aim of the program is to work with industry to transfer the structural silicide materials technology to the private sector in order to promote international competitiveness in the area of advanced high temperature materials and important applications in major energy-intensive US processing industries. The program presently has a number of industrial connections, including a CRADA with Johns Manville Corporation targeted at the area of MoSi{sub 2}-based high temperature materials for fiberglass melting and processing applications. The authors are also developing an interaction with the Institute of Gas Technology (IGT) to develop silicides for high temperature radiant gas burner applications, for the glass and other industries. With the Exotherm Corporation, they are developing advanced silicide powders for the fabrication of silicide materials with tailored and improved properties for industrial applications. In October 1998, the authors initiated a new activity funded by DOE/OIT on ``Molybdenum Disilicide Composites for Glass Processing Sensors''. With Accutru International Corporation, they are developing silicide-based protective sheaths for self-verifying temperature sensors which may be used in glass furnaces and other industrial applications. With Combustion Technology Inc., they are developing silicide-based periscope sight tubes for the direct observation of glass melts.

  17. Large hysteretic magnetoresistance of silicide nanostructures

    NASA Astrophysics Data System (ADS)

    Kim, T.; Naser, B.; Chamberlin, R. V.; Schilfgaarde, M. V.; Bennett, P. A.; Bird, J. P.

    2007-11-01

    We demonstrate a large (as much as 100%) and strongly hysteretic magnetoresistance (MR) in nominally nonferromagnetic silicide films and nanowires. This unusual MR is quenched above a few kelvins, where conventional behavior due to weak antilocalization is recovered. The dynamic characteristics of this effect are suggestive of weakly interacting, localized paramagnetic moments that form at the surface oxide of the silicide nanostructures, with dramatic consequences for transport when the system size is reduced to the nanoscale.

  18. Dopant diffusion in tungsten silicide

    SciTech Connect

    Pan, P.; Hsieh, N.; Geipel, H.J. Jr.; Slusser, G.J.

    1982-04-01

    The dopant (B, P, and As) redistribution in a silicide on polycrystalline silicon structure after annealing at 800 and 1000 /sup 0/C was studied. The distribution of boron was found to be quite different from these of phosphorus and arsenic. At 1000 /sup 0/C, the distribution coefficient for boron at the WSi/sub 2//polycrystalline silicon interface was found to be 2.7. The solubilities of phosphorus and arsenic in WSi/sub 2/ at 1000 /sup 0/C were estimated to be 6 x 10/sup 19/ and 1.6 x 10/sup 19/ atoms/cm/sup 3/, respectively. At 800 /sup 0/C, the diffusion coefficient for the dopants was found to be equal to, or greater than 3.3 x 10/sup -12/ cm/sup 2//s, which is at least three orders of magnitude larger than in silicon.

  19. Metrology Of Silicide Contacts For Future CMOS

    NASA Astrophysics Data System (ADS)

    Zollner, Stefan; Gregory, Richard B.; Kottke, M. L.; Vartanian, Victor; Wang, Xiang-Dong; Theodore, David; Fejes, P. L.; Conner, J. R.; Raymond, Mark; Zhu, Xiaoyan; Denning, Dean; Bolton, Scott; Chang, Kyuhwan; Noble, Ross; Jahanbani, Mohamad; Rossow, Marc; Goedeke, Darren; Filipiak, Stan; Garcia, Ricardo; Jawarani, Dharmesh; Taylor, Bill; Nguyen, Bich-Yen; Crabtree, P. E.; Thean, Aaron

    2007-09-01

    Silicide materials (NiSi, CoSi2, TiSi2, etc) are used to form low-resistance contacts between the back-end (W plugs and Cu interconnects) and front-end portions (silicon source, drain, and gate regions) of integrated CMOS circuits. At the 65 nm node, a transition from CoSi2 to NiSi was necessary because of the unique capability of NiSi to form narrow silicide nanowires on active (monocrystalline) and gate (polycrystalline) lines. Like its predecessors TiSi2 and CoSi2, NiSi is a mid-gap silicide, i.e., the Fermi level of the NiSi metal is pinned half-way between the conduction and valence band edges in silicon. This leads to a Schottky barrier between the silicide and silicon source-drain regions, which creates undesirable parasitic resistances. For future CMOS generations, band-edge silicides, such as PtSi for contacts to p-type or rare earth silicides for contacts to n-type Si will be needed. This paper reviews metrology and characterization techniques for NiSi process control for development and manufacturing, with special emphasis on x-ray reflectance and x-ray fluorescence. We also report measurement methods useful for development of a PtSi PMOS module.

  20. METHOD OF FORMING TANTALUM SILICIDE ON TANTALUM SURFACES

    DOEpatents

    Bowman, M.G.; Krikorian, N.H.

    1961-10-01

    A method is described for forming a non-corrosive silicide coating on tantalum. The coating is made through the heating of trirhenium silicides in contact with the tantalum object to approximately 1400 deg C at which temperature trirhenium silicide decomposes into rhenium and gaseous silicons. The silicon vapor reacts with the tantalum surface to form a tantalum silicide layer approximately 10 microns thick. (AEC)

  1. Phase transformations in ion-irradiated silicides

    NASA Technical Reports Server (NTRS)

    Hewett, C. A.; Lau, S. S.; Suni, I.; Hung, L. S.

    1985-01-01

    The present investigation has three objectives. The first is concerned with the phase transformation of CoSi2 under ion implantation and the subsequent crystallization characteristics during annealing, taking into account epitaxial and nonepitaxial recrystallization behavior. The second objective is related to a study of the general trend of implantation-induced damage and crystallization behavior for a number of commonly used silicides. The last objective involves a comparison of the recrystallization behavior of cosputtered refractory silicides with that of the ion-implanted silicides. It was found that epitaxial regrowth of ion-irradiated CoSi2 occurred for samples with an epitaxial seed left at the Si/CoSi2 interface. A structural investigation of CoSi2 involving transmission electron microscopy (TEM) showed that after high-dose implantation CoSi2 is amorphous.

  2. Temperature-dependent structure and phase variation of nickel silicide nanowire arrays prepared by in situ silicidation

    SciTech Connect

    Liu, Hailong; She, Guangwei; Mu, Lixuan; Shi, Wensheng

    2012-12-15

    Graphical abstract: Display Omitted Highlight: ► Nickel silicides nanowire arrays prepared by a simple in situ silicidation method. ► Phases of nickel silicides could be varied by tuning the reaction temperature. ► A growth model was proposed for the nickel silicides nanowires. ► Diffusion rates of Ni and Si play a critical role for the phase variation. -- Abstract: In this paper, we report an in situ silicidizing method to prepare nickel silicide nanowire arrays with varied structures and phases. The in situ reaction (silicidation) between Si and NiCl{sub 2} led to conversion of Si nanowires to nickel silicide nanowires. Structures and phases of the obtained nickel silicides could be varied by changing the reaction temperature. At a relatively lower temperature of 700 °C, the products are Si/NiSi core/shell nanowires or NiSi nanowires, depending on the concentration of NiCl{sub 2} solution. At a higher temperature (800 °C and 900 °C), other phases of the nickel silicides, including Ni{sub 2}Si, Ni{sub 31}Si{sub 12}, and NiSi{sub 2}, were obtained. It is proposed that the different diffusion rates of Ni and Si atoms at different temperatures played a critical role in the formation of nickel silicide nanowires with different phases.

  3. Synthesis and design of silicide intermetallic materials

    SciTech Connect

    Petrovic, J.J.; Castro, R.G.; Butt, D.P.

    1997-04-01

    The overall objective of this program is to develop structural silicide-based materials with optimum combinations of elevated temperature strength/creep resistance, low temperature fracture toughness, and high temperature oxidation and corrosion resistance for applications of importance to the U.S. processing industry. A further objective is to develop silicide-based prototype industrial components. The ultimate aim of the program is to work with industry to transfer the structural silicide materials technology to the private sector in order to promote international competitiveness in the area of advanced high temperature materials and important applications in major energy-intensive U.S. processing industries. The program presently has a number of developing industrial connections, including a CRADA with Schuller International Inc. targeted at the area of MoSi{sub 2}-based high temperature materials and components for fiberglass melting and processing applications. The authors are also developing an interaction with the Institute of Gas Technology (IGT) to develop silicides for high temperature radiant gas burner applications, for the glass and other industries. Current experimental emphasis is on the development and characterization of MoSi{sub 2}-Si{sub 3}N{sub 4} and MoSi{sub 2}-SiC composites, the plasma spraying of MoSi{sub 2}-based materials, and the joining of MoSi{sub 2} materials to metals.

  4. Chromium silicide formation by ion mixing

    NASA Technical Reports Server (NTRS)

    Shreter, U.; So, F. C. T.; Nicolet, M.-A.

    1984-01-01

    The formation of CrSi2 by ion mixing was studied as a function of temperature, silicide thickness and irradiated interface. Samples were prepared by annealing evaporated couples of Cr on Si and Si on Cr at 450 C for short times to form Si/CrSi2/Cr sandwiches. Xenon beams with energies up to 300 keV and fluences up to 8 x 10 to the 15th per sq cm were used for mixing at temperatures between 20 and 300 C. Penetrating only the Cr/CrSi2 interface at temperatures above 150 C induces further growth of the silicide as a uniform stoichiometric layer. The growth rate does not depend on the thickness of the initially formed silicide at least up to a thickness of 150 nm. The amount of growth depends linearly on the density of energy deposited at the interface. The growth is temperature dependent with an apparent activation energy of 0.2 eV. Irradiating only through the Si/CrSi2 interface does not induce silicide growth. It is concluded that the formation of CrSi2 by ion beam mixing is an interface-limited process and that the limiting reaction occurs at the Cr/CrSi2 interface.

  5. Chromium silicide formation by ion mixing

    NASA Technical Reports Server (NTRS)

    Shreter, U.; So, F. C. T.; Nicolet, M.-A.

    1984-01-01

    The formation of CrSi2 by ion mixing was studied as a function of temperature, silicide thickness and irradiated interface. Samples were prepared by annealing evaporated couples of Cr on Si and Si on Cr at 450 C for short times to form Si/CrSi2/Cr sandwiches. Xenon beams with energies up to 300 keV and fluences up to 8 x 10 to the 15th per sq cm were used for mixing at temperatures between 20 and 300 C. Penetrating only the Cr/CrSi2 interface at temperatures above 150 C induces further growth of the silicide as a uniform stoichiometric layer. The growth rate does not depend on the thickness of the initially formed silicide at least up to a thickness of 150 nm. The amount of growth depends linearly on the density of energy deposited at the interface. The growth is temperature dependent with an apparent activation energy of 0.2 eV. Irradiating only through the Si/CrSi2 interface does not induce silicide growth. It is concluded that the formation of CrSi2 by ion beam mixing is an interface-limited process and that the limiting reaction occurs at the Cr/CrSi2 interface.

  6. Challenges of nickel silicidation in CMOS technologies

    SciTech Connect

    Breil, Nicolas; Lavoie, Christian; Ozcan, Ahmet; Baumann, Frieder; Klymko, Nancy; Nummy, Karen; Sun, Bing; Jordan-Sweet, Jean; Yu, Jian; Zhu, Frank; Narasimha, Shreesh; Chudzik, Michael

    2015-04-01

    In our paper, we review some of the key challenges associated with the Ni silicidation process in the most recent CMOS technologies. The introduction of new materials (e.g.SiGe), and of non-planar architectures bring some important changes that require fundamental investigation from a material engineering perspective. Following a discussion of the device architecture and silicide evolution through the last CMOS generations, we focus our study on a very peculiar defect, termed NiSi-Fangs. We describe a mechanism for the defect formation, and present a detailed material analysis that supports this mechanism. We highlight some of the possible metal enrichment processes of the nickel monosilicide such as oxidation or various RIE (Reactive Ion Etching) plasma process, leading to a metal source available for defect formation. Furthermore, we investigate the NiSi formation and re-formation silicidation differences between Si and SiGe materials, and between (1 0 0) and (1 1 1) orientations. Finally, we show that the thermal budgets post silicidation can lead to the formation of NiSi-Fangs if the structure and the processes are not optimized. Beyond the understanding of the defect and the discussion on the engineering solutions used to prevent its formation, the interest of this investigation also lies in the fundamental learning within the Ni–Pt–Si–Ge system and some additional perspective on Ni-based contacts to advanced microelectronic devices.

  7. Microwave absorption properties of Ni/(C, silicides) nanocapsules

    PubMed Central

    2012-01-01

    The microwave absorption properties of Ni/(C, silicides) nanocapsules prepared by an arc discharge method have been studied. The composition and the microstructure of the Ni/(C, silicides) nanocapsules were determined by means of X-ray diffraction, X-ray photoelectric spectroscopy, and transmission electron microscope observations. Silicides, in the forms of SiOx and SiC, mainly exist in the shells of the nanocapsules and result in a large amount of defects at the ‘core/shell’ interfaces as well as in the shells. The complex permittivity and microwave absorption properties of the Ni/(C, silicides) nanocapsules are improved by the doped silicides. Compared with those of Ni/C nanocapsules, the positions of maximum absorption peaks of the Ni/(C, silicides) nanocapsules exhibit large red shifts. An electric dipole model is proposed to explain this red shift phenomenon. PMID:22548846

  8. Silicidation of Ni(Yb) Film on Si(001)

    NASA Astrophysics Data System (ADS)

    Luo, Jia; Jiang, Yu-Long; Ru, Guo-Ping; Li, Bing-Zong; Chu, Paul K.

    2008-03-01

    The influence of the addition of Yb to Ni on the silicidation of Ni was investigated. The Ni(Yb) film was deposited on a Si(001) substrate by co-sputtering, and silicidation was performed by rapid thermal annealing (RTA). After silicidation, the sheet resistance of the silicide film was measured by the four-point probe method. X-ray diffraction and micro-Raman spectroscopy were employed to identify the silicide phases, and the redistribution of Yb after RTA was characterized by Rutherford backscattering spectrometry and Auger electron spectroscopy. The influence of the Yb addition on the Schottky barrier height (SBH) of the silicide/Si diode was examined by current voltage measurements. The experimental results reveal that the addition of Yb can suppress the formation of the high-resistivity Ni2Si phase, but the formation of low-resistivity NiSi phase is not affected. Furthermore, after silicidation, most of the Yb atoms accumulate in the surface layer and only a small number of Yb atoms pile up at the silicide/Si(001) interface. It is believed that the accumulation of a small amount of Yb at the silicide/Si(001) interface results in the SBH reduction observed in the Ni(Yb)Si/Si diode.

  9. Fusion silicide coatings for tantalum alloys.

    NASA Technical Reports Server (NTRS)

    Warnock, R. V.; Stetson, A. R.

    1972-01-01

    Calculation of the performance of fusion silicide coatings under simulated atmospheric reentry conditions to a maximum temperature of 1810 K (2800 F). Both recently developed and commercially available coatings are included. Data are presented on oxidation rate with and without intentional defecting, the influence of the coatings on the ductile-brittle bend transition temperature, and the mechanical properties. Coatings appear capable of affording protection for at least 100 simulated cycles to 2600 F and 63 cycles to 2800 F.

  10. Ferromagnetic order in silicon-manganese alloys with phase separation

    SciTech Connect

    Men'shov, V. N. Tugushev, V. V.

    2011-07-15

    A phenomenological model of high-temperature ferromagnetism in silicon-manganese alloys has been proposed taking into account phase separation in these alloys, where manganese-rich particles of the secondary phase (precipitate MnSi{sub 2-z} with z Almost-Equal-To 0.25-0.30) are formed inside a manganese-depleted matrix of almost pure silicon. Precipitate MnSi{sub 2-z} is considered as the silicide MnSi{sub 1.7} containing a certain number of magnetic defects whose origin is due to the presence of weakly hybridized 3d orbitals of manganese. The silicide MnSi{sub 1.7} is a weak band ferromagnet in which strong fluctuations of the spin density (paramagnons) are present at a temperature much higher than its Curie temperature. It has been shown that the ferromagnetic exchange interactions between the magnetic moments of defects in precipitate exists due to thermal excitations of the spin density and the ferromagnetic order can appear at a temperature much higher than the Curie temperature of the silicide. The spatial structures and characteristics of this order have been described in the framework of the proposed approach for both homogeneous bulk precipitate and precipitate particles of various shapes and sizes. The short-range magnetic order near the bulk phase transition has been analyzed taking into account inhomogeneities in the distribution of magnetic defects in precipitate. The experimental data on the magnetic properties of silicon-manganese alloys have been interpreted in terms of the theoretical results obtained in this work.

  11. Formation, structure, and orientation of gold silicide on gold surfaces

    NASA Technical Reports Server (NTRS)

    Green, A. K.; Bauer, E.

    1976-01-01

    The formation of gold silicide on Au films evaporated onto Si(111) surfaces is studied by Auger electron spectroscopy (AES) and low-energy electron diffraction (LEED). Surface condition, film thickness, deposition temperature, annealing temperature, and heating rate during annealing are varied. Several oriented crystalline silicide layers are observed.

  12. Initial development of high-temperature titanium silicide alloys

    SciTech Connect

    Liu, C.T.; Lee, E.H.; Henson, T.J.

    1988-01-01

    Mechanical and metallurgical properties of Ti/sub 5/Si/sub 3/ and its alloys were studied for the purpose of developing high-temperature silicides for structural use. Titanium silicides are extremely hard and brittle. Microcracks that formed transgranularly were observed in the silicide and its alloys, indicating a poor cleavage strength for Ti/sub 5/Si/sub 3/. Microalloying with boron and carbon gave no apparent beneficial effect. The tendency for cracking can be reduced by lowering the silicon content or by alloying with 2 to 4% Cr and 4% Zr. In particular, almost no cracks were observed in the alloy Ti-33Si-4Zr-4Cr (at. %). Titanium silicide has a hardness of 980 dph. The hardness shows a slight increase with zirconium additions and a decrease with chromium additions. Tensile tests indicate that the silicide and its alloys are brittle even at 1000/degree/C. All alloys fractured with a strength less than 100 MPa. Among the silicides tested, the alloys containing 4 to 8% Cr have better fracture strength. The fracture mode of the silicide alloys is mainly transgranular with a cleavage appearance. The silicides showed basically a parabolic oxidation rate at 800/degree/C, with an oxidation rate higher by an order of magnitude than that of nickel aluminides. 10 figs., 5 tabs.

  13. Raman scattering from rapid thermally annealed tungsten silicide

    NASA Technical Reports Server (NTRS)

    Kumar, Sandeep; Dasgupta, Samhita; Jackson, Howard E.; Boyd, Joseph T.

    1987-01-01

    Raman scattering as a technique for studying the formation of tungsten silicide is presented. The tungsten silicide films have been formed by rapid thermal annealing of thin tungsten films sputter deposited on silicon substrates. The Raman data are interpreted by using data from resistivity measurements, Auger and Rutherford backscattering measurements, and scanning electron microscopy.

  14. Formation, structure, and orientation of gold silicide on gold surfaces

    NASA Technical Reports Server (NTRS)

    Green, A. K.; Bauer, E.

    1976-01-01

    The formation of gold silicide on Au films evaporated onto Si(111) surfaces is studied by Auger electron spectroscopy (AES) and low-energy electron diffraction (LEED). Surface condition, film thickness, deposition temperature, annealing temperature, and heating rate during annealing are varied. Several oriented crystalline silicide layers are observed.

  15. Raman scattering from rapid thermally annealed tungsten silicide

    NASA Technical Reports Server (NTRS)

    Kumar, Sandeep; Dasgupta, Samhita; Jackson, Howard E.; Boyd, Joseph T.

    1987-01-01

    Raman scattering as a technique for studying the formation of tungsten silicide is presented. The tungsten silicide films have been formed by rapid thermal annealing of thin tungsten films sputter deposited on silicon substrates. The Raman data are interpreted by using data from resistivity measurements, Auger and Rutherford backscattering measurements, and scanning electron microscopy.

  16. Thermal Stability of Magnesium Silicide/Nickel Contacts

    NASA Astrophysics Data System (ADS)

    de Boor, J.; Droste, D.; Schneider, C.; Janek, J.; Mueller, E.

    2016-10-01

    Magnesium silicide-based materials are a very promising class of thermoelectric materials with excellent potential for thermoelectric waste heat recovery. For the successful application of magnesium silicide-based thermoelectric generators, the development of long-term stable contacts with low contact resistance is as important as material optimization. We have therefore studied the suitability of Ni as a contact material for magnesium silicide. Co-sintering of magnesium silicide and Ni leads to the formation of a stable reaction layer with low electrical resistance. In this paper we show that the contacts retain their low electrical contact resistance after annealing at temperatures up to 823 K for up to 168 h. By employing scanning electron microscope analysis and time-of-flight (ToF)-secondary ion mass spectrometry, we can further show that elemental diffusion is occurring to a very limited extent. This indicates long-term stability under practical operation conditions for magnesium silicide/nickel contacts.

  17. Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha

    DOEpatents

    Lim, Chong Wee; Shin, Chan Soo; Gall, Daniel; Petrov, Ivan Georgiev; Greene, Joseph E.

    2004-09-28

    A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.

  18. The growth and applications of silicides for nanoscale devices

    NASA Astrophysics Data System (ADS)

    Lin, Yung-Chen; Chen, Yu; Huang, Yu

    2012-02-01

    Metal silicides have been used in silicon technology as contacts to achieve high device performance and desired device functions. The growth and applications of silicide materials have recently attracted increasing interest for nanoscale device applications. Nanoscale silicide materials have been demonstrated with various synthetic approaches. Solid state reaction wherein high quality silicides form through diffusion of metal atoms into silicon nano-templates and the subsequent phase transformation caught significant attention for the fabrication of nanoscale Si devices. Very interestingly, studies on the diffusion and phase transformation processes at the nanoscale have indicated possible deviations from the bulk and the thin film system. Here we present a review of fabrication, growth kinetics, electronic properties and device applications of nanoscale silicides formed through solid state reaction.Metal silicides have been used in silicon technology as contacts to achieve high device performance and desired device functions. The growth and applications of silicide materials have recently attracted increasing interest for nanoscale device applications. Nanoscale silicide materials have been demonstrated with various synthetic approaches. Solid state reaction wherein high quality silicides form through diffusion of metal atoms into silicon nano-templates and the subsequent phase transformation caught significant attention for the fabrication of nanoscale Si devices. Very interestingly, studies on the diffusion and phase transformation processes at the nanoscale have indicated possible deviations from the bulk and the thin film system. Here we present a review of fabrication, growth kinetics, electronic properties and device applications of nanoscale silicides formed through solid state reaction. This article was submitted as part of a collection highlighting papers on the `Recent Advances in Semiconductor Nanowires Research' from ICMAT 2011.

  19. Miniaturized platinum silicide focal plane array camera

    NASA Astrophysics Data System (ADS)

    Landry, Joseph W.; Stetson, Norman B.

    1994-07-01

    With the introduction of the Inframetrics InfraCAM, a new standard is established for small, lightweight, low power, hand- held, high sensitivity, high resolution thermal imaging systems. A unique design approach to video processing as well as the compact and efficient Inframetrics patented Sterling cycle microcooler allow the unit to require less than 5 watts of power during operation. The unit is smaller than most commercially available `palm-corders' with both the sensor and processing electronics housed in the same package. This paper reviews both the architecture and performance of our 256 X 256 platinum silicide array based imager.

  20. Thermodynamic properties of higher lanthanum silicide

    SciTech Connect

    Polotskaya, R.I.

    1988-07-01

    The thermodynamic properties of lanthanum disilicide were examined for the first time in the 960-1050/sup 0/K range by measuring the electromotive force of a galvanic cell based on LaSn, the chlorides of potassium, sodium, and lanthanum, and lanthanum silicide and silicon. Reference electrodes were used to prevent lanthanum interaction with the electrolyte. The alloys were melted in an electric arc furnace in purified argon from lanthanum and silicon and followed by two-stage annealing. It was found that the resulting value of the enthalpy formation differed from the estimated value for lanthanum disilicide calculated by Miedema's model.

  1. Irradiation behaviour of uranium silicide compounds

    NASA Astrophysics Data System (ADS)

    Finlay, M. R.; Hofman, G. L.; Snelgrove, J. L.

    2004-02-01

    A study of the irradiation behaviour of uranium silicide and other related inter-metallic uranium compounds is presented. This study was motivated by the recent discovery that U 3Si 2 undergoes a crystalline to amorphous transformation during irradiation. Such information renders a previously developed fuel swelling model based on the crystalline state of U 3Si 2 invalid. This is of particular significance since low enriched U 3Si 2 dispersion fuels are widely used in research reactors. While such a finding does not alter the well established, stable and benign behaviour of U 3Si 2 during irradiation, it does indicate that a different interpretation of that behaviour is required.

  2. Carbon or boron modified titanium silicide

    DOEpatents

    Thom, A.J.; Akinc, M.

    1996-12-03

    A titanium silicide material based on Ti{sub 5}Si{sub 3} intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000 C. Boron is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end. 3 figs.

  3. Carbon or boron modified titanium silicide

    DOEpatents

    Thom, A.J.; Akinc, M.

    1998-07-14

    A titanium silicide material based on Ti{sub 5}Si{sub 3} intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000 C. Boron is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end. 3 figs.

  4. Carbon or boron modified titanium silicide

    DOEpatents

    Thom, A.J.; Akinc, M.

    1997-12-02

    A titanium silicide material based on Ti{sub 5}Si{sub 3} intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000 C. Boron is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end. 3 figs.

  5. Carbon or boron modified titanium silicide

    DOEpatents

    Thom, Andrew J.; Akinc, Mufit

    1996-12-03

    A titanium silicide material based on Ti.sub.5 Si.sub.3 intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000.degree. C. Boron is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end.

  6. Carbon or boron modified titanium silicide

    DOEpatents

    Thom, Andrew J.; Akinc, Mufit

    1998-07-14

    A titanium silicide material based on Ti.sub.5 Si.sub.3 intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000.degree. C. Boron is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end.

  7. Carbon or boron modified titanium silicide

    DOEpatents

    Thom, Andrew J.; Akinc, Mufit

    1997-12-02

    A titanium silicide material based on Ti.sub.5 Si.sub.3 intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000.degree. C. Boron is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end.

  8. Joule-assisted silicidation for short-channel silicon nanowire devices.

    PubMed

    Mongillo, Massimo; Spathis, Panayotis; Katsaros, Georgios; Gentile, Pascal; Sanquer, Marc; De Franceschi, Silvano

    2011-09-27

    We report on a technique enabling electrical control of the contact silicidation process in silicon nanowire devices. Undoped silicon nanowires were contacted by pairs of nickel electrodes, and each contact was selectively silicided by means of the Joule effect. By a real-time monitoring of the nanowire electrical resistance during the contact silicidation process we were able to fabricate nickel-silicide/silicon/nickel-silicide devices with controlled silicon channel length down to 8 nm.

  9. Formation of titanium silicides by high dose ion implantation

    NASA Astrophysics Data System (ADS)

    Salvi, V. P.; Vidwans, S. V.; Rangwala, A. A.; Arora, B. M.; Kuldeep; Jain, Animesh K.

    1987-09-01

    We have investigated titanium silicide formation using high dose (˜ 2 × 10 21 ions/m 2) ion implantation of 30 keV, 48Ti + ions a room temperature into two different types of Si substrates: (a) n-type <111> single crystals and (b) amorphous Si films (˜ 200 nm thick) vacuum deposited onto a thermally grown SiO 2 layer. XRD and RBS techniques were employed to characterize various silicide phases and their depth distribution in as-implanted as well as in annealed samples. We find that a mixture of TiSi, TiSi 2 and Ti 5Si 4 silicides is formed by high dose implantation. Out of these, TiSi; was found to be the dominant phase. The composition of these silicide layers is practically uniform with depth and remains unaltered on heat treatment up to 750° C. The electrical properties of silicide layers have also been investigated using sheet resistance measurements. The resistivity of as-implanted layers is rather high ( ˜ 10 μΩ m), but drops sharply by nearly a factor of 20 after a post-implantation anneal above 800° C. The resistivity of silicide layers thus obtained compare well with silicides prepared by other techniques.

  10. Initial surface silicidation on Ni(110)

    NASA Astrophysics Data System (ADS)

    Fukuda, T.; Kishida, I.; Umezawa, K.

    2017-05-01

    Initial silicide formation on a Ni(110) surface was studied by scanning tunneling microscopy (STM) in an ultrahigh vacuum. Less than 0.5 ML of Si deposition initiated a Si-Ni mixed layer by displacing substrate Ni, and dark sites were formed in the STM images. A 0.5 ML-Si deposited surface showed that Si and Ni were alternately aligned in a close-packed [ 1 1 bar 0 ] row whereas Si pairs aligned along the [ 001 ] direction forming p(1×2), obliquely aligned forming c(2×2), or even straightly-and-obliquely aligned forming c(4×2) superstructures. A first-principles total energy calculation showed that the p(1×2) and c(4×2) structures had almost the same energy while the c(2×2) structure gave 13 meV/1×1 higher energy. Because a Si-Si bond in the close-packed [ 1 1 bar 0 ] row is energetically unfavorable, Si deposition of more than 0.5 ML did not further replace the substrate Ni, but silicide islands were nucleated along with a trench structure.

  11. Boron modified molybdenum silicide and products

    DOEpatents

    Meyer, Mitchell K.; Akinc, Mufit

    1999-02-02

    A boron-modified molybdenum silicide material having the composition comprising about 80 to about 90 weight % Mo, about 10 to about 20 weight % Si, and about 0.1 to about 2 weight % B and a multiphase microstructure including Mo.sub.5 Si.sub.3 phase as at least one microstructural component effective to impart good high temperature creep resistance. The boron-modified molybdenum silicide material is fabricated into such products as electrical components, such as resistors and interconnects, that exhibit oxidation resistance to withstand high temperatures in service in air as a result of electrical power dissipation, electrical resistance heating elements that can withstand high temperatures in service in air and other oxygen-bearing atmospheres and can span greater distances than MoSi.sub.2 heating elements due to improved creep resistance, and high temperature structural members and other fabricated components that can withstand high temperatures in service in air or other oxygen-bearing atmospheres while retaining creep resistance associated with Mo.sub.5 Si.sub.3 for structural integrity.

  12. Boron modified molybdenum silicide and products

    DOEpatents

    Meyer, M.K.; Akinc, M.

    1999-02-02

    A boron-modified molybdenum silicide material is disclosed having the composition comprising about 80 to about 90 weight % Mo, about 10 to about 20 weight % Si, and about 0.1 to about 2 weight % B and a multiphase microstructure including Mo{sub 5}Si{sub 3} phase as at least one microstructural component effective to impart good high temperature creep resistance. The boron-modified molybdenum silicide material is fabricated into such products as electrical components, such as resistors and interconnects, that exhibit oxidation resistance to withstand high temperatures in service in air as a result of electrical power dissipation, electrical resistance heating elements that can withstand high temperatures in service in air and other oxygen-bearing atmospheres and can span greater distances than MoSi{sub 2} heating elements due to improved creep resistance, and high temperature structural members and other fabricated components that can withstand high temperatures in service in air or other oxygen-bearing atmospheres while retaining creep resistance associated with Mo{sub 5}Si{sub 3} for structural integrity. 7 figs.

  13. ITEP MEVVA ion beam for rhenium silicide production

    SciTech Connect

    Kulevoy, T.; Seleznev, D.; Kropachev, G.; Kozlov, A.; Kuibeda, R.; Yakushin, P.; Petrenko, S.; Gerasimenko, N.; Medetov, N.; Zaporozhan, O.

    2010-02-15

    The rhenium silicides are very attractive materials for semiconductor industry. In the Institute for Theoretical and Experimental Physics (ITEP) at the ion source test bench the research program of rhenium silicide production by ion beam implantation are going on. The investigation of silicon wafer after implantation of rhenium ion beam with different energy and with different total dose were carried out by secondary ions mass spectrometry, energy-dispersive x-ray microanalysis, and x-ray diffraction analysis. The first promising results of rhenium silicide film production by high intensity ion beam implantation are presented.

  14. OMCVD of cobalt and cobalt silicide

    NASA Astrophysics Data System (ADS)

    Dormans, G. J. M.; Meekes, G. J. B. M.; Staring, E. G. J.

    1991-11-01

    Cobalt and cobalt silicide layers were deposited by OMCVD using the Co precursors Co(C 5H 5) 2, Co 2(CO) 8, Co(C 5H 5)(CO) 2 and CoCF 3(CO) 4, and the Si precursors SiH 4 and Si 2H 6. Strongly textured (111)-β Co layers were grown from Co(C 5H 5) 2, Co(C 5H 5)(CO) 2 and CoCF 3(CO) 4 at temperatures above 300°C in H 2 at atmospheric pressure. Growth from Co(C 5H 5) 2 is inhibited on Si substrates. For temperatures ≥600°C the Co layers deposited from Co(C 5H 5)(CO) 2 react with the Si(100) substrate to form CoSi 2(00 l) aligned with the substrate orientation. Co 2(CO) 8 gives amorphous Co between 200 and 300°C. The upper temperature is set by the occurrence of homogeneous gas-phase reactions at atmospheric reactor pressure. Cobalt silicide layers can be grown from CO 2(CO) 8 and (di)silane at temperatures between 200 and 400°C. The Co/Si ratio in the layers decreases with increasing temperature and is independent of the gas-phase Co/Si ratio. Stoichiometric CoSi 2 is obtained at ~ 300°C. Both Co(C 5H 5) 2 and Co(C 5H 5)(CO) 2 react with (di)silane, leading to the incorporation of carbon in the layer. The Co/Si ration and the carbon content in the layers are practically independent of the deposition conditions. With CoCF 3(CO) 4 no contamination-free silicide could be grown. The carbon incorporation with Co(C 5H 5) 2 and Co(C 5H 5)(CO) 2 can be avoided by a pulsed growth method in which the Co precursor and the Si precursor are introduced alternately into the reactor. With Co(C 5H 5) 2 the growth is then inhibited on Si substrates.

  15. Titanium silicide formation on boron-implanted silicon

    SciTech Connect

    Chow, T.P.; Goehner, R.; Katz, W.; Smith, G.

    1985-08-01

    Thin film interaction between Ti and boron-implanted silicon substrates at 650/sup 0/-900/sup 0/ C was investigated. The compositional properties were examined with Rutherford backscattering spectrometry and secondary ion mass spectrometry, the structural properties with x-ray diffraction, and the electrical properties with sheet resistance measurements. At 650/sup 0/ C, incomplete Ti/Si reaction led to significant amounts of intermediate silicide phases (Ti/sub 5/Si/sub 3/ and TiSi) and hence higher sheet resistance. Annealing at 700/sup 0/ C or higher resulted in conversion of the titanium film into predominantly TiSi/sub 2/ and a lower sheet resistance. Boron was found to redistribute into the silicide layer during annealing, leading to an accumulation on the surface and a depletion at the silicide/silicon interface. The diffusion kinetics of boron through titanium silicide are compared with those of other p- and n-type dopants.

  16. Growth and stability of copper silicide thin films

    NASA Astrophysics Data System (ADS)

    Hymes, Stephen William

    1999-11-01

    Copper silicide has been investigated as a candidate material in copper-based multilevel interconnects (MLI)for application in Ultra Large Scale Integration (ULSI). The selective formation of a passivating copper silicide surface layer on a copper thin film is achieved by exposure of the copper film to a dilute silane mixture at elevated temperature. The morphology and kinetics of the surface silicide and subsequent thermal stability in inert and oxidizing ambient were investigated using RBS, XRD and other conventional characterization techniques. Consequently, a preliminary evaluation of this material for application in future microelectronics is made. With respect to growth product formation and morphology, a continuous, uniform, homogenous eta'' -Cu3Si film is formed in the presence of an in-situ 30 sec, 50 watt 3% H2/Ar preclean and silane exposure above 200 C. Silane exposure of the copper film above 300 C leads to the initial formation of gamma-Cu 5Si, as the Cu3Si is no longer stable in the presence of excess underlying copper, until such time that no unreacted copper remains at which point eta''-Cu3 Si again nucleates and grows at the expense of the more copper-rich silicide. The growth kinetics of this surface silicide were also determined. A kinetically limited growth above 1000 sccm of 2% SiH4/Ar is evidenced by saturation of the growth thickness dependence on flow rate. A linear time dependence exists over the low temperature regime corresponding to eta ''-Cu3Si growth. The temperature dependence indicates a reaction rate which is Arrhenius with an apparent activation energy of Ea = 0.87 +/- 0.19 eV. The partial pressure exponent, q, for silane is found to be q = 0.13 +/- .10 while no dependence on the growth rate is found upon total pressure. Evaluation of the silicide surface layer was then performed with respect to stability in inert and oxidizing media. As-formed copper silicide/copper bilayers were annealed in a static air ambient and the oxidation

  17. A promising new thermoelectric material - Ruthenium silicide

    NASA Technical Reports Server (NTRS)

    Vining, Cronin B.; Mccormack, Joseph A.; Zoltan, Andrew; Zoltan, Leslie D.

    1991-01-01

    Experimental and theoretical efforts directed toward increasing thermoelectric figure of merit values by a factor of 2 or 3 have been encouraging in several respects. An accurate and detailed theoretical model developed for n-type silicon-germanium (SiGe) indicates that ZT values several times higher than currently available are expected under certain conditions. These new, high ZT materials are expected to be significantly different from SiGe, but not unreasonably so. Several promising candidate materials have been identified which may meet the conditions required by theory. One such candidate, ruthenium silicide, currently under development at JPL, has been estimated to have the potential to exhibit figure of merit values 4 times higher than conventional SiGe materials. Recent results are summarized.

  18. Valence photoelectron spectroscopy of Gd silicides

    SciTech Connect

    Braicovich, L. ); Puppin, E.; Lindau, I. ); Iandelli, A.; Olcese, G.L.; Palenzona, A. )

    1990-02-15

    Gd{sub 3}Si{sub 5}, GdSi, and Gd{sub 5}Si{sub 3} were investigated with photoemission spectroscopy in the photon-energy range 40.8--149 eV by exploiting the energy dependence of the photoemission cross sections and the valence resonance at the crossing of the Gd 4{ital d}-4{ital f} threshold. The modification of the spectra versus photon energy, along with their stoichiometry dependence, show the relevance of covalent mixed Gd 5{ital d}--Si 3{ital sp} states in the formation of the chemical bond. In the region close to the Fermi level an increase of the {ital d} contribution is observed. These points are discussed in connection with the existing models of the silicide bond.

  19. Nano-structured silicide formation by focused ion beam implantation and integration of silver metallization with thin film silicide layers

    NASA Astrophysics Data System (ADS)

    Mitan, Martin M.

    Nano-structured silicide formation was mediated through ion implantation. Silicide structures with dimensions of 170 nm were produced on (100) silicon substrates by ion implantation of 200 KeV As++ through a thin cobalt film on SiO2/Si structure. A selective reaction barrier at the Si/Co interface comprising of a thin (˜2 nm) oxide (SiO 2) prevents unwanted reactions. Ion-beam mixing was instrumental in the fracturing of the oxide layer, thereby allowing the migration of metal atoms across the SiO2/Co boundary for the silicidation reaction to proceed during subsequent rapid thermal anneal (RTA) treatments. A threshold dose of 3 x 1015 cm-2 was required for process initiation. Four-terminal resistance test structures were formed for electrical measurements. Resistivity values obtained ranged from 12 to 23 muO-cm, improving with increased ion dose. Application of this method can facilitate a wide variety of silicide structures. Part two of this study focused on the reliability study of silver metalization with silicides. Silicide thin films of CoSi2 and NiSi were prepared by solid phase reactions utilizing the bi-layer technique. Silver thin films were then deposited on the silicides to evaluate the thermal stability of the films during vacuum annealing. Rutherford backscattering spectrometry of annealed films revealed Ag film changes to occur at 700°C. No changes in the silicide thin films could be detected. Scanning electron microscopy of annealed films shows grain coarsening of the Ag film with increasing anneal temperature. At 650°C, voids begin to appear in the film. Increasing anneal temperature up to 700°C agglomerates the film. X-ray diffraction glancing angle scans revealed no phase changes in annealed films. The as-deposited case and 700°C both show the same reflection peaks being present. Secondary ion mass spectroscopy depth profiling revealed trace amounts of Ag at the silicide/silicon interface following a heat treatment. This occurrence appears to

  20. Silicide Nanowires for Low-Resistance CMOS Transistor Contacts.

    NASA Astrophysics Data System (ADS)

    Zollner, Stefan

    2007-03-01

    Transition metal (TM) silicide nanowires are used as contacts for modern CMOS transistors. (Our smallest wires are ˜20 nm thick and ˜50 nm wide.) While much research on thick TM silicides was conducted long ago, materials perform differently at the nanoscale. For example, the usual phase transformation sequences (e.g., Ni, Ni2Si, NiSi, NiSi2) for the reaction of thick metal films on Si no longer apply to nanostructures, because the surface and interface energies compete with the bulk energy of a given crystal structure. Therefore, a NiSi film will agglomerate into hemispherical droplets of NiSi by annealing before it reaches the lowest-energy (NiSi2) crystalline structure. These dynamics can be tuned by addition of impurities (such as Pt in Ni). The Si surface preparation is also a more important factor for nanowires than for silicidation of thick TM films. Ni nanowires formed on Si surfaces that were cleaned and amorphized by sputtering with Ar ions have a tendency to form NiSi2 pyramids (``spikes'') even at moderate temperatures (˜400^oC), while similar Ni films formed on atomically clean or hydrogen-terminated Si form uniform NiSi nanowires. Another issue affecting TM silicides is the barrier height between the silicide contact and the silicon transistor. For most TM silicides, the Fermi level of the silicide is aligned with the center of the Si band gap. Therefore, silicide contacts experience Schottky barrier heights of around 0.5 eV for both n-type and p-type Si. The resulting contact resistance becomes a significant term for the overall resistance of modern CMOS transistors. Lowering this contact resistance is an important goal in CMOS research. New materials are under investigation (for example PtSi, which has a barrier height of only 0.3 eV to p-type Si). This talk will describe recent results, with special emphasis on characterization techniques and electrical testing useful for the development of silicide nanowires for CMOS contacts. In collaboration

  1. Silicide/Silicon Hetero-Junction Structure for Thermoelectric Applications.

    PubMed

    Jun, Dongsuk; Kim, Soojung; Choi, Wonchul; Kim, Junsoo; Zyung, Taehyoung; Jang, Moongyu

    2015-10-01

    We fabricated silicide/silicon hetero-junction structured thermoelectric device by CMOS process for the reduction of thermal conductivity with the scatterings of phonons at silicide/silicon interfaces. Electrical conductivities, Seebeck coefficients, power factors, and temperature differences are evaluated using the steady state analysis method. Platinum silicide/silicon multilayered structure showed an enhanced Seebeck coefficient and power factor characteristics, which was considered for p-leg element. Also, erbium silicide/silicon structure showed an enhanced Seebeck coefficient, which was considered for an n-leg element. Silicide/silicon multilayered structure is promising for thermoelectric applications by reducing thermal conductivity with an enhanced Seebeck coefficient. However, because of the high thermal conductivity of the silicon packing during thermal gradient is not a problem any temperature difference. Therefore, requires more testing and analysis in order to overcome this problem. Thermoelectric generators are devices that based on the Seebeck effect, convert temperature differences into electrical energy. Although thermoelectric phenomena have been used for heating and cooling applications quite extensively, it is only in recent years that interest has increased in energy generation.

  2. Epitaxial silicide formation on recoil-implanted substrates

    SciTech Connect

    Hashimoto, Shin; Egashira, Kyoko; Tanaka, Tomoya; Etoh, Ryuji; Hata, Yoshifumi; Tung, R. T.

    2005-01-15

    An epitaxy-on-recoil-implanted-substrate (ERIS) technique is presented. A disordered surface layer, generated by forward recoil implantation of {approx}0.7-3x10{sup 15} cm{sup -2} of oxygen during Ar plasma etching of surface oxide, is shown to facilitate the subsequent epitaxial growth of {approx}25-35-nm-thick CoSi{sub 2} layers on Si(100). The dependence of the epitaxial fraction of the silicide on the recoil-implantation parameters is studied in detail. A reduction in the silicide reaction rate due to recoil-implanted oxygen is shown to be responsible for the observed epitaxial formation, similar to mechanisms previously observed for interlayer-mediated growth techniques. Oxygen is found to remain inside the fully reacted CoSi{sub 2} layer, likely in the form of oxide precipitates. The presence of these oxide precipitates, with only a minor effect on the sheet resistance of the silicide layer, has a surprisingly beneficial effect on the thermal stability of the silicide layers. The agglomeration of ERIS-grown silicide layers on polycrystalline Si is significantly suppressed, likely from a reduced diffusivity due to oxygen in the grain boundaries. The implications of the present technique for the processing of deep submicron devices are discussed.

  3. Hafnium silicide formation on Si(100) upon annealing

    SciTech Connect

    Siervo, A. de; Fluechter, C. R.; Weier, D.; Schuermann, M.; Dreiner, S.; Westphal, C.; Carazzolle, M. F.; Pancotti, A.; Landers, R.; Kleiman, G. G.

    2006-08-15

    High dielectric constant materials, such as HfO{sub 2}, have been extensively studied as alternatives to SiO{sub 2} in new generations of Si based devices. Hf silicate/silicide formation has been reported in almost all literature studies of Hf based oxides on Si, using different methods of preparation. A silicate interface resembles close to the traditional Si/SiO{sub 2}. The silicate very likely forms a very sharp interface between the Si substrate and the metal oxide, and would be suitable for device applications. However, the thermal instability of the interfacial silicate/oxide film leads to silicidation, causing a dramatic loss of the gate oxide integrity. Despite the importance of the Hf silicide surface and interface with Si, only a few studies of this surface are present in the literature, and a structural determination of the surface has not been reported. This paper reports a study of the Hf silicide formation upon annealing by using a combination of XPS, LEED, and x-ray photoelectron diffraction (XPD) analyses. Our results clearly indicate the formation of a unique ordered Hf silicide phase (HfSi{sub 2}), which starts to crystallize when the annealing temperature is higher than 550 deg. C.

  4. Metal silicide/poly-Si Schottky diodes for uncooled microbolometers

    PubMed Central

    2013-01-01

    Nickel silicide Schottky diodes formed on polycrystalline Si 〈P〉 films are proposed as temperature sensors of monolithic uncooled microbolometer infrared focal plane arrays. The structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by means of transmission electron microscopy. The Ni silicide is identified as a multi-phase compound composed of 20% to 40% of Ni3Si, 30% to 60% of Ni2Si, and 10% to 30% of NiSi with probable minor content of NiSi2 at the silicide/poly-Si interface. Rectification ratios of the Schottky diodes vary from about 100 to about 20 for the temperature increasing from 22℃ to 70℃; they exceed 1,000 at 80 K. A barrier of around 0.95 eV is found to control the photovoltage spectra at room temperature. A set of barriers is observed in photo-electromotive force spectra at 80 K and attributed to the Ni silicide/poly-Si interface. Absolute values of temperature coefficients of voltage and current are found to vary from 0.3%℃ to 0.6%/℃ for forward bias and around 2.5%/℃ for reverse bias of the diodes. PMID:23594606

  5. Manganese nodules

    USGS Publications Warehouse

    Hein, James R.; Harff, Jan; Petersen, Sven; Thiede, Jorn

    2016-01-01

    The existence of manganese (Mn) nodules (Fig. 1) has been known since the late 1800s when they were collected during the Challenger expedition of 1873–1876. However, it was not until after WWII that nodules were further studied in detail for their ability to adsorb metals from seawater. Many of the early studies did not distinguish Mn nodules from Mn crusts. Economic interest in Mn nodules began in the late 1950s and early 1960s when John Mero finished his Ph.D. thesis on this subject, which was published...

  6. Epitaxial titanium silicide islands and nanowires

    NASA Astrophysics Data System (ADS)

    He, Zhian; Stevens, M.; Smith, David J.; Bennett, P. A.

    2003-02-01

    The growth of titanium silicide islands formed by reactive deposition of Ti on Si(1 1 1) at T˜850 °C has been studied using atomic force microscopy and transmission electron microscopy. The predominant shape is very long and narrow, and can be considered to be a nanowire (NW). Other flat-topped structures coexist with the NWs, including small equilateral triangles and large rectangular plates. Most NWs are oriented along Si <2 2 0> directions, with typical dimensions 20 nm wide, 10 nm high and several microns long. A minority of NWs are oriented along Si <2 2 4> . These latter tend to break up into chains of small segments with regular size and spacing. Growth at lower temperature or higher deposition rate results in smaller and more numerous NWs. Length appears to be limited by intersection with other NWs oriented 120° apart. The junction between NWs appears to be incoherent in most cases. The triangular islands are positively identified as fully relaxed C54 TiSi 2, while the chains are relaxed C49 TiSi 2. The dominant NW structure is incommensurate and is tentatively identified as C49 TiSi 2.

  7. Si-Ge Nano-Structured with Tungsten Silicide Inclusions

    NASA Technical Reports Server (NTRS)

    Mackey, Jon; Sehirlioglu, Alp; Dynys, Fred

    2014-01-01

    Traditional silicon germanium high temperature thermoelectrics have potential for improvements in figure of merit via nano-structuring with a silicide phase. A second phase of nano-sized silicides can theoretically reduce the lattice component of thermal conductivity without significantly reducing the electrical conductivity. However, experimentally achieving such improvements in line with the theory is complicated by factors such as control of silicide size during sintering, dopant segregation, matrix homogeneity, and sintering kinetics. Samples are prepared using powder metallurgy techniques; including mechanochemical alloying via ball milling and spark plasma sintering for densification. In addition to microstructural development, thermal stability of thermoelectric transport properties are reported, as well as couple and device level characterization.

  8. Formation of cobalt silicide by ion beam mixing

    NASA Astrophysics Data System (ADS)

    Min, Ye; Burte, Edmund P.; Ryssel, Heiner

    1991-07-01

    The formation of cobalt silicides by arsenic ion implantation through a cobalt film which causes a mixing of the metal with the silicon substrate was investigated. Furthermore, cobalt suicides were formed by rapid thermal annealing (RTA). Sheet resistance and silicide phases of implanted Co/Si samples depend on the As dose. Ion beam mixing at doses higher than 5 × 10 15 cm -2 and RTA at temperatures T ⩾ 900° C result in almost equal values of Rs. RBS and XRD spectra of these samples illustrate the formation of a homogeneous CoSi 2 layer. Significant lateral growth of cobalt silicide beyond the edge of patterned SiO 2 was observed in samples which were only subjected to an RTA process ( T ⩾ 900 ° C), while this lateral suicide growth could be reduced efficiently by As implantation prior to RTA.

  9. Oxidation resistance of composite silicide coatings on niobium

    SciTech Connect

    Gloshko, P.I.; Kurtsev, N.F.; Lisichenko, V.I.; Nadtoka, V.N.; Petrenko, M.I.; Zmii, V.I.

    1986-07-01

    This paper reports the oxidation of NbSi/sub 2/-MoSi/sub 2/ composite silicide coatings produced by diffusive siliconizing of molybdenum films on a niobium surface. Molybdenum-coated niobium was siliconized and an x-ray microspectral analysis of the composite silicide coating showed the phase composition to be an ca 80-um-thick outer molybdenum disilicide film with a characteristic coarsely crystalline columnar structure, and inner ca 20-um film of niobium disilicide consisting of the tiny columnar crystals, and a substrate/coating interface comprising a thin, 2-3 um film of lower silicide, i.e., Nb/sub 5/Si/sub 3/. The average grain sizes, unit cell parameters, and x-ray determined densities of the Mo films obtained by various methods are shown.

  10. Passivation of copper by silicide formation in dilute silane

    NASA Astrophysics Data System (ADS)

    Hymes, S.; Murarka, S. P.; Shepard, C.; Lanford, W. A.

    1992-05-01

    The formation of copper silicide by reaction of silane with sputtered copper films has been observed at temperatures as low as 300 °C. The growth kinetics have been monitored by both sheet resistance and x-ray diffraction techniques. Cu5Si is the first phase to form followed next by Cu3Si, coincident with the loss of the original copper layer. The silicide layer provides significant oxidation protection for the underlying copper up to 550 °C in air.

  11. Physical, Mechanical, and Structural Properties of Highly Efficient Nanostructured n- and p-Silicides for Practical Thermoelectric Applications

    NASA Astrophysics Data System (ADS)

    Gelbstein, Yaniv; Tunbridge, Jonathan; Dixon, Richard; Reece, Mike J.; Ning, Huanpo; Gilchrist, Robert; Summers, Richard; Agote, Iñigo; Lagos, Miguel A.; Simpson, Kevin; Rouaud, Cedric; Feulner, Peter; Rivera, Sergio; Torrecillas, Ramon; Husband, Mark; Crossley, Julian; Robinson, Ivan

    2014-06-01

    Cost-effective highly efficient nanostructured n-type Mg2Si1- x Sn x and p-type higher manganese silicide (HMS) compositions were prepared for the development of practical waste heat generators for automotive and marine thermoelectric applications, in the frame of the European Commission (EC)-funded PowerDriver project. The physical, mechanical, and structural properties were fully characterized as part of a database-generation exercise required for the thermoelectric converter design. A combination of high maximal ZT values of ˜0.6 and ˜1.1 for the HMS and Mg2Si1- x Sn x compositions, respectively, and adequate mechanical properties was obtained.

  12. Fabrication and Gas-Sensing Properties of Ni-Silicide/Si Nanowires

    NASA Astrophysics Data System (ADS)

    Hsu, Hsun-Feng; Chen, Chun-An; Liu, Shang-Wu; Tang, Chun-Kai

    2017-03-01

    Ni-silicide/Si nanowires were fabricated by atomic force microscope nano-oxidation on silicon-on-insulator substrates, selective wet etching, and reactive deposition epitaxy. Ni-silicide nanocrystal-modified Si nanowire and Ni-silicide/Si heterostructure multi-stacked nanowire were formed by low- and high-coverage depositions of Ni, respectively. The Ni-silicide/Si Schottky junction and Ni-silicide region were attributed high- and low-resistance parts of nanowire, respectively, causing the resistance of the Ni-silicide nanocrystal-modified Si nanowire and the Ni-silicide/Si heterostructure multi-stacked nanowire to be a little higher and much lower than that of Si nanowire. An O2 sensing device was formed from a nanowire that was mounted on Pt electrodes. When the nanowires exposed to O2, the increase in current in the Ni-silicide/Si heterostructure multi-stacked nanowire was much larger than that in the other nanowires. The Ni-silicide nanocrystal-modified Si nanowire device had the highest sensitivity. The phenomenon can be explained by the formation of a Schottky junction at the Ni-silicide/Si interface in these two types of Ni-Silicide/Si nanowire and the formation of a hole channel at the silicon nanowire/native oxide interface after exposing the nanowires to O2.

  13. Fabrication and Gas-Sensing Properties of Ni-Silicide/Si Nanowires.

    PubMed

    Hsu, Hsun-Feng; Chen, Chun-An; Liu, Shang-Wu; Tang, Chun-Kai

    2017-12-01

    Ni-silicide/Si nanowires were fabricated by atomic force microscope nano-oxidation on silicon-on-insulator substrates, selective wet etching, and reactive deposition epitaxy. Ni-silicide nanocrystal-modified Si nanowire and Ni-silicide/Si heterostructure multi-stacked nanowire were formed by low- and high-coverage depositions of Ni, respectively. The Ni-silicide/Si Schottky junction and Ni-silicide region were attributed high- and low-resistance parts of nanowire, respectively, causing the resistance of the Ni-silicide nanocrystal-modified Si nanowire and the Ni-silicide/Si heterostructure multi-stacked nanowire to be a little higher and much lower than that of Si nanowire. An O2 sensing device was formed from a nanowire that was mounted on Pt electrodes. When the nanowires exposed to O2, the increase in current in the Ni-silicide/Si heterostructure multi-stacked nanowire was much larger than that in the other nanowires. The Ni-silicide nanocrystal-modified Si nanowire device had the highest sensitivity. The phenomenon can be explained by the formation of a Schottky junction at the Ni-silicide/Si interface in these two types of Ni-Silicide/Si nanowire and the formation of a hole channel at the silicon nanowire/native oxide interface after exposing the nanowires to O2.

  14. Silicide Schottky Contacts to Silicon: Screened Pinning at Defect Levels

    SciTech Connect

    Drummond, T.J.

    1999-03-11

    Silicide Schottky contacts can be as large as 0.955 eV (E{sub v} + 0.165 eV) on n-type silicon and as large as 1.05 eV (E{sub c} {minus} 0.07 eV) on p-type silicon. Current models of Schottky barrier formation do not provide a satisfactory explanation of occurrence of this wide variation. A model for understanding Schottky contacts via screened pinning at defect levels is presented. In the present paper it is shown that most transition metal silicides are pinned approximately 0.48 eV above the valence band by interstitial Si clusters. Rare earth disilicides pin close to the divacancy acceptor level 0.41 eV below the conduction band edge while high work function silicides of Ir and Pt pin close to the divacancy donor level 0.21 eV above the valence band edge. Selection of a particular defect pinning level depends strongly on the relative positions of the silicide work function and the defect energy level on an absolute energy scale.

  15. Microwave assisted synthesis of technologically important transition metal silicides

    SciTech Connect

    Vaidhyanathan, B.; Rao, K.J.

    1997-12-01

    A novel, simple, clean and fast microwave assisted method of preparing important transition metal silicides (MoSi{sub 2}, WSi{sub 2}, CoSi{sub 2}, and TiSi{sub 2}) has been described. Amorphous carbon is used both as a microwave susceptor and as a preventer of oxidation. {copyright} {ital 1997 Materials Research Society.}

  16. Deposition of aluminide and silicide based protective coatings on niobium

    NASA Astrophysics Data System (ADS)

    Majumdar, S.; Arya, A.; Sharma, I. G.; Suri, A. K.; Banerjee, S.

    2010-11-01

    We compare aluminide and alumino-silicide composite coatings on niobium using halide activated pack cementation (HAPC) technique for improving its oxidation resistance. The coated samples are characterized by SEM, EDS, EPMA and hardness measurements. We observe formation of NbAl3 in aluminide coating of Nb, though the alumino-silicide coating leads to formation primarily of NbSi2 in the inner layer and a ternary compound of Nb-Si-Al in the outer layer, as reported earlier (Majumdar et al. [11]). Formation of niobium silicide is preferred over niobium aluminide during alumino-silicide coating experiments, indicating Si is more strongly bonded to Nb than Al, although equivalent quantities of aluminium and silicon powders were used in the pack chemistry. We also employ first-principles density functional pseudopotential-based calculations to calculate the relative stability of these intermediate phases and the adhesion strength of the Al/Nb and Si/Nb interfaces. NbSi2 exhibits much stronger covalent character as compared to NbAl3. The ideal work of adhesion for the relaxed Al/Nb and Si/Nb interfaces are calculated to be 3226 mJ/m2 and 3545 mJ/m2, respectively, indicating stronger Nb-Si bonding across the interface.

  17. Analysis of Nickel Silicides by SIMS and LEAP

    SciTech Connect

    Ronsheim, Paul; McMurray, Jeff; Flaitz, Philip; Parks, Christopher

    2007-09-26

    Ni-silicides formed by a variety of processing techniques were studied with secondary ion mass spectroscopy (SIMS) and local electrode atom probe (LEAP registered ) analysis. SIMS provided 1-D chemical analysis over an approximately 60 micron diameter area. LEAP provided 3-D atom identities and locations over an approximately 100-150 nm diameter area. It was determined that the 200 deg. C drive-in anneal results in a Ni{sub 3}Si{sub 2} phase, which is converted to NiSi at temperatures between 360 deg. C-400 deg. C. LEAP detects no As or Pt segregation after the 200 deg. C drive-in anneal, but did quantify As segregation of up to 7% of the material composition just inside the NiSi-Si interface after the phase-formation anneal. The presence of oxygen at the interface results in a silicide chemical surface roughness of up to 3.5 nm as compared to 0.5 nm with a clean, non-oxidized surface. Silicide stability was demonstrated over the phase-formation-temperature range of 360 deg. C - 400 deg. C including when a second rapid thermal anneal step was used. LEAP analysis was also able to quantify the surface roughness of the interface as a function of anneal temperature and the non-uniform Pt and As distribution across the silicide surface as viewed in 2-D surface projection.

  18. Texture in thin film silicides and germanides: A review

    NASA Astrophysics Data System (ADS)

    De Schutter, B.; De Keyser, K.; Lavoie, C.; Detavernier, C.

    2016-09-01

    Silicides and germanides are compounds consisting of a metal and silicon or germanium. In the microelectronics industry, silicides are the material of choice for contacting silicon based devices (over the years, CoSi2, C54-TiSi2, and NiSi have been adopted), while germanides are considered as a top candidate for contacting future germanium based electronics. Since also strain engineering through the use of Si1-xGex in the source/drain/gate regions of MOSFET devices is an important technique for improving device characteristics in modern Si-based microelectronics industry, a profound understanding of the formation of silicide/germanide contacts to silicon and germanium is of utmost importance. The crystallographic texture of these films, which is defined as the statistical distribution of the orientation of the grains in the film, has been the subject of scientific studies since the 1970s. Different types of texture like epitaxy, axiotaxy, fiber, or combinations thereof have been observed in such films. In recent years, it has become increasingly clear that film texture can have a profound influence on the formation and stability of silicide/germanide contacts, as it controls the type and orientation of grain boundaries (affecting diffusion and agglomeration) and the interface energy (affecting nucleation during the solid-state reaction). Furthermore, the texture also has an impact on the electrical characteristics of the contact, as the orientation and size of individual grains influences functional properties such as contact resistance and sheet resistance and will induce local variations in strain and Schottky barrier height. This review aims to give a comprehensive overview of the scientific work that has been published in the field of texture studies on thin film silicide/germanide contacts.

  19. Texture in thin film silicides and germanides: A review

    SciTech Connect

    De Schutter, B. De Keyser, K.; Detavernier, C.; Lavoie, C.

    2016-09-15

    Silicides and germanides are compounds consisting of a metal and silicon or germanium. In the microelectronics industry, silicides are the material of choice for contacting silicon based devices (over the years, CoSi{sub 2}, C54-TiSi{sub 2}, and NiSi have been adopted), while germanides are considered as a top candidate for contacting future germanium based electronics. Since also strain engineering through the use of Si{sub 1−x}Ge{sub x} in the source/drain/gate regions of MOSFET devices is an important technique for improving device characteristics in modern Si-based microelectronics industry, a profound understanding of the formation of silicide/germanide contacts to silicon and germanium is of utmost importance. The crystallographic texture of these films, which is defined as the statistical distribution of the orientation of the grains in the film, has been the subject of scientific studies since the 1970s. Different types of texture like epitaxy, axiotaxy, fiber, or combinations thereof have been observed in such films. In recent years, it has become increasingly clear that film texture can have a profound influence on the formation and stability of silicide/germanide contacts, as it controls the type and orientation of grain boundaries (affecting diffusion and agglomeration) and the interface energy (affecting nucleation during the solid-state reaction). Furthermore, the texture also has an impact on the electrical characteristics of the contact, as the orientation and size of individual grains influences functional properties such as contact resistance and sheet resistance and will induce local variations in strain and Schottky barrier height. This review aims to give a comprehensive overview of the scientific work that has been published in the field of texture studies on thin film silicide/germanide contacts.

  20. Nanoscale contact engineering for Silicon/Silicide nanowire devices

    NASA Astrophysics Data System (ADS)

    Lin, Yung-Chen

    Metal silicides have been used in silicon technology as contacts to achieve high device performance and desired device functions. The growth and applications of silicide materials have recently attracted increasing interest for nanoscale device applications. Nanoscale silicide materials have been demonstrated with various synthetic approaches. Solid state reaction wherein high quality silicides form through diffusion of metal atoms into silicon nano-templates and the subsequent phase transformation caught significant attention for the fabrication of nanoscale Si devices. Very interestingly, studies on the diffusion and phase transformation processes at nanoscale have indicated possible deviations from the bulk and the thin film system. Here we studied growth kinetics, electronic properties and device applications of nanoscale silicides formed through solid state reaction. We have grown single crystal PtSi nanowires and PtSi/Si/PtSi nanowire heterostructures through solid state reaction. TEM studies show that the heterostructures have atomically sharp interfaces free of defects. Electrical measurement of PtSi nanowires shows a low resistivity of ˜28.6 μΩ·cm and a high breakdown current density beyond 108 A/cm2. Furthermore, using single-crystal PtSi/Si/PtSi nanowire heterostructures with atomically clean interfaces, we have fabricated p-channel enhancement mode transistors with the best reported performance for intrinsic silicon nanowires to date. In our results, silicide can provide a clean and no Fermi level pinning interface and then silicide can form Ohmic-contact behavior by replacing the source/drain metal with PtSi. It has been proven by our experiment by contacting PtSi with intrinsic Si nanowires (no extrinsic doping) to achieve high performance p-channel device. By utilizing the same approach, single crystal MnSi nanowires and MnSi/Si/MnSi nanowire heterojunction with atomically sharp interfaces can also been grown. Electrical transport studies on Mn

  1. Manganese nodules

    USGS Publications Warehouse

    Hein, James R.; Harff, Jan; Petersen, Sven; Thiede, Jorn

    2016-01-01

    The existence of manganese (Mn) nodules (Figure 1) has been known since the late 1800s when they were collected during the Challenger expedition of 1873–1876. However, it was not until after WWII that nodules were further studied in detail for their ability to adsorb metals from seawater. Many of the early studies did not distinguish Mn nodules from Mn crusts. Economic interest in Mn nodules began in the late 1950s and early 1960s when John Mero finished his Ph.D. thesis on this subject, which was published in the journal Economic Geology (Mero, 1962) and later as a book (Mero, 1965). By the mid-1970s, large consortia had formed to search for and mine Mn nodules that occur between the Clarion and Clipperton fracture zones (CCZ) in the NE Pacific (Figure 2). This is still the area considered of greatest economic potential in the global ocean because of high nickel (Ni), copper (Cu), and Mn contents and the dense distribution of nodules in the area. While the mining of nodules was fully expected to begin in the late 1970s or early 1980s, this never occurred due to a downturn in the price of metals on the global market. Since then, many research cruises have been undertaken to study the CCZ nodules, and now 15 contracts for exploration sites have been given or are pending by the International Seabed Authority (ISA). Many books and science journal articles have been published summarizing the early work (e.g., Baturin, 1988; Halbach et al., 1988), and research has continued to the present day (e.g., ISA, 1999; ISA, 2010). Although the initial attraction for nodules was their high Ni, Cu, and Mn contents, subsequent work has shown that nodules host large quantities of other critical metals needed for high-tech, green-tech, and energy applications (Hein et al., 2013; Hein and Koschinsky, 2014).

  2. Chronic manganese intoxication

    SciTech Connect

    Huang, C.C.; Chu, N.S.; Lu, C.S.; Wang, J.D.; Tsai, J.L.; Tzeng, J.L.; Wolters, E.C.; Calne, D.B. )

    1989-10-01

    We report six cases of chronic manganese intoxication in workers at a ferromanganese factory in Taiwan. Diagnosis was confirmed by assessing increased manganese concentrations in the blood, scalp, and pubic hair. In addition, increased manganese levels in the environmental air were established. The patients showed a bradykinetic-rigid syndrome indistinguishable from Parkinson's disease that responded to treatment with levodopa.

  3. Investigation into Self-Organizational Tendencies of Cobalt- and Titanium-Silicide Nanostructures on Si Surfaces

    DTIC Science & Technology

    2008-09-22

    properties , directly affects interaction with the deposited metal adatoms, and in conjunction with the metal deposition method, determines the silicide ...formation kinetics and the properties of the silicide /silicon interface. Morphological and statistical characteristics, and the resulting collective...Report 3. DATES COVERED (From – To) 1 April 2007 - 01-Apr-08 4. TITLE AND SUBTITLE Self-Organization of Cobalt Silicide Nanostructures into 2D

  4. High-Performance Thin-Film Transistors Using Ni Silicide for Liquid-Crystal Displays

    DTIC Science & Technology

    2000-07-01

    UNCLASSIFIED Defense Technical Information Center Compilation Part Notice ADPO 11297 TITLE: High-Performance Thin-Film Transistors Using Ni Silicide ...report: ADP011297 thru ADP011332 UNCLASSIFIED Invited Paper High-performance thin-film transistors using Ni silicide for liquid- crystal displays Jin...Jang, Jai I1 Ryu, and Kyu Sik Cho Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea ABSTRACT The Ni- silicide of a

  5. High-temperature properties of a silicon nitride-intermetallic silicide composite

    SciTech Connect

    Matsumoto, R.L.K.; Weaver, G.G.

    1991-10-01

    Ceramic composites composed of a silicon nitride matrix containing a dispersed silicide phase have been fabricated. While many silicides are brittle at room temperature, they become ductile at high temperatures as they undergo a brittle-to-ductile transition. In contrast to composites having silicides as the matrix phase, the material examined contains dispersed cobalt silicide particulates and has room temperature toughness of 10 MPa sq rt m. The toughness increases to 12 MPa sq rt m at 800 C. When the brittle-to-ductile transition temperature is exceeded, the toughness at 1100 C drops to 6 MPa sq rt m. 13 refs.

  6. Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

    SciTech Connect

    Ozcan, Ahmet S.; Lavoie, Christian; Jordan-Sweet, Jean; Alptekin, Emre; Zhu, Frank; Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M.

    2016-04-21

    We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

  7. Oxidation behavior of molybdenum silicides and their composites

    SciTech Connect

    Natesan, K.; Deevi, S. C.

    2000-04-03

    A key materials issue associated with the future of high-temperature structural silicides is the resistance of these materials to oxidation at low temperatures. Oxidation tests were conducted on Mo-based silicides over a wide temperature range to evaluate the effects of alloy composition and temperature on the protective scaling characteristics and testing regime for the materials. The study included Mo{sub 5}Si{sub 3} alloys that contained several concentrations of B. In addition, oxidation characteristics of MoSi{sub 2}-Si{sub 3}N{sub 4} composites that contained 20--80 vol.% Si{sub 3}N{sub 4} were evaluated at 500--1,400 C.

  8. Schottky Barrier Inhomogeneities in Nickel Silicide Transrotational Contacts

    NASA Astrophysics Data System (ADS)

    Alberti, Alessandra; Roccaforte, Fabrizio; Libertino, Sebania; Bongiorno, Corrado; La Magna, Antonino

    2011-11-01

    Ni-silicide/silicon Schottky contacts have been realised by promoting low-temperature Ni-Si interdiffusion during deposition (˜50 °C) and reaction (450 °C) on an oxygen-free [001] silicon surface. A 14 nm transrotational NiSi layer was produced made of extremely flat pseudo-epitaxial domains (˜200 nm in diameter). The current-voltage (I-V) characteristics (340-80 K) have indicated the presence of structural inhomogeneities which lower the Schottky barrier by Δ≈0.1 eV. They have been associated with the core regions of the trans-domains (wherein the silicide lattice is epitaxially aligned to that of Si) since their density (˜2.5×109 cm-2) and dimension (˜10 nm) fit the I-V curves vs temperature following the Tung's approach.

  9. Titanium-based silicide quantum dot superlattices for thermoelectrics applications.

    PubMed

    Savelli, Guillaume; Stein, Sergio Silveira; Bernard-Granger, Guillaume; Faucherand, Pascal; Montès, Laurent; Dilhaire, Stefan; Pernot, Gilles

    2015-07-10

    Ti-based silicide quantum dot superlattices (QDSLs) are grown by reduced-pressure chemical vapor deposition. They are made of titanium-based silicide nanodots scattered in an n-doped SiGe matrix. This is the first time that such nanostructured materials have been grown in both monocrystalline and polycrystalline QDSLs. We studied their crystallographic structures and chemical properties, as well as the size and the density of the quantum dots. The thermoelectric properties of the QDSLs are measured and compared to equivalent SiGe thin films to evaluate the influence of the nanodots. Our studies revealed an increase in their thermoelectric properties-specifically, up to a trifold increase in the power factor, with a decrease in the thermal conductivity-making them very good candidates for further thermoelectric applications in cooling or energy-harvesting fields.

  10. Characteristics of a promising new thermoelectric material - Ruthenium silicide

    NASA Technical Reports Server (NTRS)

    Ohta, Toshitaka; Vining, Cronin B.; Allevato, Camillo E.

    1991-01-01

    A preliminary study on arc-melted samples has indicated that ruthenium silicide has the potential to obtain figure-of-merit values four times higher than that of conventional silicon-germanium material. In order to realize the high figure-of-merit values, high-quality crystal from the melt is needed. A Bridgman-like method has been employed and has realized much better crystals than arc-melted ones.

  11. Stacked Metal Silicide/Silicon Far-Infrared Detectors

    NASA Technical Reports Server (NTRS)

    Maserjian, Joseph

    1988-01-01

    Selective doping of silicon in proposed metal silicide/silicon Schottky-barrier infrared photodetector increases maximum detectable wavelength. Stacking layers to form multiple Schottky barriers increases quantum efficiency of detector. Detectors of new type enhance capabilities of far-infrared imaging arrays. Grows by molecular-beam epitaxy on silicon waferscontaining very-large-scale integrated circuits. Imaging arrays of detectors made in monolithic units with image-preprocessing circuitry.

  12. Silicide-matrix materials for high-temperature applications

    SciTech Connect

    Meschter, P.J.; Schwartz, D.S. )

    1989-11-01

    Intermetallic-matrix composites are attractive alternatives to carbon/carbon and ceramic/ceramic composities for applications up to 1,600 C. Recent work on the intermetallic compounds MoSi2 and Ti5Si3 has included determination of their mechanical properties and deformation behavior, selection of thermodynamically compatible high-strength and ductile reinforcements, and strengthening and toughening mechanisms in silicide-matrix composites for high-temperature service. 11 refs.

  13. Carbon nanotube cantilevers on self-aligned copper silicide nanobeams

    NASA Astrophysics Data System (ADS)

    Parajuli, Omkar; Kumar, Nitin; Kipp, Dylan; Hahm, Jong-in

    2007-04-01

    In this letter, the authors describe both a growth method for self-aligning copper silicide (Cu3Si) nanobeams and their use as active catalysts for carbon nanotube (CNT) synthesis via chemical vapor deposition. In the unique geometry of these useful structures, CNT cantilevers are anchored firmly to the Cu3Si nanobeams. The resulting CNT-Cu3Si structures may improve accuracy and reliability of CNT applications in nanoelectromechanical systems.

  14. Manganese Oxidation State Assignment for Manganese Catalase.

    PubMed

    Beal, Nathan J; O'Malley, Patrick J

    2016-04-06

    The oxidation state assignment of the manganese ions present in the superoxidized manganese (III/IV) catalase active site is determined by comparing experimental and broken symmetry density functional theory calculated (14)N, (17)O, and (1)H hyperfine couplings. Experimental results have been interpreted to indicate that the substrate water is coordinated to the Mn(III) ion. However, by calculating hyperfine couplings for both scenarios we show that water is coordinated to the Mn(IV) ion and that the assigned oxidation states of the two manganese ions present in the site are the opposite of that previously proposed based on experimental measurements alone.

  15. Processing, Microstructure, and Properties of Multiphase Mo Silicide Alloys

    SciTech Connect

    Heatherly, L.; Liu, C.T.; Schneibel, J.H.

    1998-11-30

    Multiphase Mo silicide alloys containing T2 (Mo{sub 5}SiB{sub 2}), Mo{sub 3}Si and Mo phases where prepared by both melting and casting (M and C) and powder metallurgical (PM) processes. Glassy phases are observed in PM materials but not in M and C materials. Microstructural studies indicate that the primary phase is Mo-rich solid solution in alloys containing {le}(9.4Si+13.8B, at. %) and T2 in alloys with {ge}(9.8Si+14.6B). An eutectic composition is estimated to be close to Mo-9.6Si-14.2B. The mechanical properties of multiphase silicide alloys were determined by hardness, tensile and bending tests at room temperature. The multiphase alloy MSB-18 (Mo-9.4Si-13.8B) possesses a flexure strength distinctly higher than that of MoSi{sub 2} and other Mo{sub 5}Si{sub 3} silicide alloys containing no Mo particles. Also, MSB-18 is tougher than MoSi{sub 2} by a factor of 4.

  16. Silicidation of Niobium Deposited on Silicon by Physical Vapor Deposition

    SciTech Connect

    Coumba Ndoye, Kandabara Tapily, Marius Orlowski, Helmut Baumgart, Diefeng Gu

    2011-07-01

    Niobium was deposited by physical vapor deposition (PVD) using e-beam evaporation on bare (100) silicon substrates and SiO2 surfaces. The formation of niobium silicide was investigated by annealing PVD Nb films in the temperatures range 400–1000°C. At all elevated annealing temperatures the resistivity of Nb silicide is substantially higher than that of Nb. The Nb silicidation as a function of temperature has been investigated and different NbXSiy compounds have been characterized. It has been observed that the annealing of the Nb film on Si is accompanied by a strong volume expansion of about 2.5 of the resulting reacted film. The films' structural properties were studied using X-Ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), and atomic force microscopy (AFM), which was not previously presented in the context of the extant NbSi literature. The X-Ray diffraction characterization of the Nb on Si sample annealed at 1000°C, showed the presence of hexagonal Nb5Si3 phases, with a dominant peak at the (200) plane, and NbSi2 phases. Fractal dimension calculations indicate a distinct transition from Stranski-Krastanov to Volmer-Weber film growth for NbSi formation at the annealing temperature of 600°C and above.

  17. Increasing the heat resistance of vanadium by siliciding

    SciTech Connect

    Lyutyi, E.M.; Tsvikilevich, O.S.; Shirokov, V.V.; Stepanishin, V.I.

    1988-01-01

    The purpose of this article was to evaluate the influence of modifier metals on the protective properties of silicide coatings in heating of vanadium in air and also on the mechanical properties of type VnM-2 unalloyed vanadium and VTsU alloy. Coatings were produced by diffusion impregnation from molten sodium with silicon or silicides of the modifying elements. The silicides of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, chromium, tungsten, rhenium, and nickel were investigated using x-ray spectrometric and hardness investigations and x-ray diffractometric analysis. The protective properties of the coatings were determined from the relative change in weight of the samples with and without coatings during isothermal oxidation in air at 1073/sup 0/K and also by differential thermal analysis. The influence of the coating on the mechanical properties of the material was also investigated using a borosilicide coating. High-temperature vacuum annealing was assessed as a method for restoring the plastic properties and relieving the stresses of vanadium and VTsU alloy subsequent to coating.

  18. Silicide phase formation in Ni/Si system: Depth-resolved positron annihilation and Rutherford backscattering study

    SciTech Connect

    Abhaya, S.; Amarendra, G.; Panigrahi, B.K.; Nair, K.G.M.

    2006-02-01

    Silicidation in Ni/Si thin-film junction has been investigated using depth-resolved positron annihilation spectroscopy (PAS) and Rutherford backscattering spectrometry (RBS). Identification of various silicide phases from an analysis of the positron annihilation parameters is consistent with the RBS results. Absence of vacancy defects in the silicide region is clearly brought out by PAS00.

  19. Manganese uptake of imprinted polymers

    SciTech Connect

    Susanna Ventura

    2015-09-30

    Batch tests of manganese imprinted polymers of variable composition to assess their ability to extract lithium and manganese from synthetic brines at T=45C . Data on manganese uptake for two consecutive cycles are included.

  20. Columnar and subsurface silicide growth with novel molecular beam epitaxy techniques

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; George, T.; Pike, W. T.

    1992-01-01

    We have found novel growth modes for epitaxial CoSi2 at high temperatures coupled with Si-rich flux ratios or low deposition rates. In the first of these modes, codeposition of metal and Si at 600-800 C with excess Si leads to the formation of epitaxial silicide columns surrounded by single-crystal Si. During the initial stages of the deposition, the excess Si grows homoepitaxially in between the silicide, which forms islands, so that the lateral growth of the islands is confined. Once a template layer is established by this process, columns of silicide form as a result of selective epitaxy of silicide on silicide and Si on Si. This growth process allows nanometer control over silicide particles in three dimensions. In the second of these modes, a columnar silicide seed layer is used as a template to nucleate subsurface growth of CoSi2. With a 100 nm Si layer covering CoSi2 seeds, Co deposited at 800C and 0.01 nm/s diffuses down to grow on the buried seeds rather than nucleating surface silicide islands. For thicker Si caps or higher deposition rates, the surface concentration of Co exceeds the critical concentration for nucleation of islands, preventing this subsurface growth mode from occurring. Using this technique, single-crystal layers of CoSi2 buried under single-crystal Si caps have been grown.

  1. Synthesis of metal silicide at metal/silicon oxide interface by electronic excitation

    SciTech Connect

    Lee, J.-G.; Nagase, T.; Yasuda, H.; Mori, H.

    2015-05-21

    The synthesis of metal silicide at the metal/silicon oxide interface by electronic excitation was investigated using transmission electron microscopy. A platinum silicide, α-Pt{sub 2}Si, was successfully formed at the platinum/silicon oxide interface under 25–200 keV electron irradiation. This is of interest since any platinum silicide was not formed at the platinum/silicon oxide interface by simple thermal annealing under no-electron-irradiation conditions. From the electron energy dependence of the cross section for the initiation of the silicide formation, it is clarified that the silicide formation under electron irradiation was not due to a knock-on atom-displacement process, but a process induced by electronic excitation. It is suggested that a mechanism related to the Knotek and Feibelman mechanism may play an important role in silicide formation within the solid. Similar silicide formation was also observed at the palladium/silicon oxide and nickel/silicon oxide interfaces, indicating a wide generality of the silicide formation by electronic excitation.

  2. Formation of low resistivity titanium silicide gates in semiconductor integrated circuits

    DOEpatents

    Ishida, Emi

    1999-08-10

    A method of forming a titanium silicide (69) includes the steps of forming a transistor having a source region (58), a drain region (60) and a gate structure (56) and forming a titanium layer (66) over the transistor. A first anneal is performed with a laser anneal at an energy level that causes the titanium layer (66) to react with the gate structure (56) to form a high resistivity titanium silicide phase (68) having substantially small grain sizes. The unreacted portions of the titanium layer (66) are removed and a second anneal is performed, thereby causing the high resistivity titanium silicide phase (68) to convert to a low resistivity titanium silicide phase (69). The small grain sizes obtained by the first anneal allow low resistivity titanium silicide phase (69) to be achieved at device geometries less than about 0.25 micron.

  3. Nanomaterials of silicides and silicon for energy conversion and storage

    NASA Astrophysics Data System (ADS)

    Szczech, Jeannine Robin

    Our consumption of fossil fuels can be reduced to address the pressing concerns of global climate change by maximizing the efficiency of conversion technologies. Since many of the alternative fuel sources also being examined are intermittent in nature, it is imperative that high capacity and high power density storage devices are also developed. The conversion efficiency of current state-of-the-art thermoelectric materials is too low to meet our needs, but it may be possible to increase the conversion efficiency of thermoelectric materials by moving from the bulk to the nanoscale. The transition metal silicides, including CrSi2, beta-FeSi2 , Mg2Si and MnSi1.7, have been explored as environmentally friendly non-toxic thermoelectric materials. I began my research in the group synthesizing silicide nanowires via chemical vapor transport (CVT), and later expanded my research to include the synthesis of silicide nanocomposites for thermoelectrics and mesoporous silicon nanocomposites for use as high capacity lithium battery electrodes. Nanoscale thermoelectrics and the enhanced thermoelectric figure-of-merit ZT reported by thermoelectric researchers are reviewed in Chapter 1. Chapter 2 reviews the progress being made in the research community with nanoscale and nanostructured silicon battery anodes. The synthesis and characterization of CrSi2 nanowires synthesized via CVT is detailed in Chapter 3, followed by hyperbranched epitaxial FeSi nanostructures exhibiting merohedral twinning in Chapter 4. Nanowires are fundamentally interesting and provide insight into the changes in materials properties compared to the bulk. The synthesis of interesting nanostructured silicide materials are detailed in Chapter 5, where the conversion of diatoms into a nanostructured thermoelectric Mg2Si/MgO nanocomposite that retains the basic diatom structure after conversion is detailed. This reaction was then modified to use mesoporous silica instead of diatoms to reduce the nanocrystalline

  4. Transient and End Silicide Phase Formation in Thin Film Ni/polycrystalline-Si Reactions for Fully Silicided Gate Applications

    SciTech Connect

    Kittl,J.; Pawlak, M.; Torregiani, C.; Lauwers, A.; Demeurisse, C.; Vrancken, C.; Absil, P.; Biesemans, S.; Coia, C.; et. al

    2007-01-01

    The Ni/polycrystalline-Si thin film reaction was monitored by in situ x-ray diffraction during ramp annealings, obtaining a detailed view of the formation and evolution of silicide phases in stacks of interest for fully silicided gate applications. Samples consisted of Ni (30-170 nm)/polycrystalline-Si (100 nm)/SiO2 (10-30 nm) stacks deposited on (100) Si. The dominant end phase (after full silicidation) was found to be well controlled by the deposited Ni to polycrystalline-Si thickness ratio (tNi/tSi), with formation of NiSi2 ( {approx} 600 C), NiSi ( {approx} 400 C), Ni3Si2 ( {approx} 500 C), Ni2Si, Ni31Si12 ( {approx} 420 C), and Ni3Si ( {approx} 600 C) in stacks with tNi/tSi of 0.3, 0.6, 0.9, 1.2, 1.4, and 1.7, respectively. NiSi and Ni31Si12 were observed to precede formation of NiSi2 and Ni3Si, respectively, as expected for the phase sequence conventionally reported. Formation of Ni2Si was observed at early stages of the reaction. These studies revealed, in addition, the formation of transient phases that appeared and disappeared in narrow temperature ranges, competing with formation of the phases expected in the conventional phase sequence. These included the transient formation of NiSi and Ni31Si12 in stacks in which these phases are not expected to form (e.g., tNi/tSi of 1.7 and 0.9, respectively), at temperatures similar to those in which these phases normally grow.

  5. Chemically enhanced ion etching on refractory metal silicides

    SciTech Connect

    O'Brien, W.L.; Rhodin, T.N.; Rathbun, L.C.

    1988-05-01

    Mechanisms of chemically enhanced ion etching on TiSi/sub 2/ and MoSi/sub 2/ were studied using high-resolution (250 ns) direct time-of-flight (TOF) spectroscopy and steady-state surface techniques (Auger electron spectroscopy and x-ray photoelectron spectroscopy). Argon ion pulses (4 ..mu..s, 0.2 mA/cm/sup 2/) were used in combination with a high-pressure chlorine gas doser (1 x 10/sup -5/ Torr) to study ion etchant product distributions. Ion product TOF distributions were interpreted in terms of the collisional cascade model with corrections for ionization probability. Surface chemical and compositional changes were measured after etching the silicide surfaces. Differences in TOF distributions of the same species from different substrates (e.g., Si from Si, TiSi/sub 2/ and MoSi/sub 2/) are discussed on the basis of these chemical and compositional changes. Etching mechanisms for the silicides are discussed by comparison to the etching of the elemental surfaces.

  6. Work function characterization of solution-processed cobalt silicide

    NASA Astrophysics Data System (ADS)

    Shihab Ullah, Syed; Robinson, Matt; Hoey, Justin; Sky Driver, M.; Caruso, A. N.; Schulz, Douglas L.

    2012-06-01

    Cobalt silicide thin films were prepared by spin-coating liquid cyclohexasilane-based inks onto silicon substrates followed by a thermal treatment. The work function of the solution-processed Co-Si was determined by both capacitance-voltage (C-V) measurements of metal-oxide-semiconductor (MOS) structures as well as by ultraviolet photoemission spectroscopy (UPS). Variable frequency C-V of MOS structures with silicon oxide layers of variable thickness showed that solution-processed metal silicide films exhibit a work function of 4.36 eV with one Co-Si film on Si <1 0 0> giving a UPS-derived work function of 4.80 eV. Similar work function measurements were collected for vapor-deposited MOS capacitors where Al thin films were prepared according to standard class 100 cleanroom handling techniques. In both instances, the work function values established by the electrical measurements were lower than those measured by UPS and this difference appears to be a consequence of parasitic series resistance.

  7. Silicene-type Surface Reconstruction on C40 Hexagonal Silicides

    NASA Astrophysics Data System (ADS)

    Volders, Cameron; Reinke, Petra

    Silicene has emerged as the next two-dimensional material possessing a Dirac type electronic structure making it a prime candidate for integration in electronic devices. The study of silicene is relatively new and many aspects have yet to be fully understood. Here we present a scanning tunneling microscopy (STM) study of a Silicene-type surface reconstruction observed on nanometer scale hexagonal-MoSi2 crystallites. This surface reconstruction is specific to the C40 structure of h-MoSi2 and can initially be defined as a geometric silicene while the coupling between the silicene surface and the silicide bulk is under investigation. The lateral dimensions correspond to a superstructure where the silicene hexagons are slightly buckled and two of the six Si atoms are visible in the STM images creating a honeycomb pattern. The local electronic structure of the silicene is currently being studied with ST spectroscopy and the impact of confinement will be addressed. These results open an alternative route to Silicene growth by using surface reconstructions on metallic and semiconducting C40 silicide structures, which is promising for direct device integration on Si-platforms.

  8. Nonuniformity effects in a hybrid platinum silicide imaging device

    NASA Astrophysics Data System (ADS)

    Dereniak, E. L.; Perry, D. L.

    1991-09-01

    The objective of this project was twofold. The first objective was to characterize the Hughes Aircraft Company CRC-365 platinum silicide imaging device in a staring infrared sensor system. The CRC-365 is a hybrid 256 x 256 IR focal plane array that operates in the 3-5 micrometer thermal infrared band. A complete sensor and computer interface were built for these tests, using plans provided by the Rome Laboratory at Hanscom Air Force Base, Massachusetts. Testing of the device revealed largely satisfactory performance, with notable exceptions in the areas of temporal response, temporal noise, and electrical crosstalk. The second objective of this research was to advance the understanding of how detector nonuniformity effects reduce the performance of sensors of this type. Notable accomplishments in this included a complete linear analysis of corrected thermal imaging in platinum silicide sensors, a nonlinear analysis of the CRC-365s expected performance, analysis of its actual performance when operated with nonuniformity correction, and the development of a new figure of merit. It was demonstrated that the CRC-365 is capable of maintaining background-noise-limited performance over at least a 40 K target temperature range, when operated with two-point nonuniformity correction.

  9. Nonuniformity effects in a hybrid platinum silicide imaging device

    NASA Astrophysics Data System (ADS)

    Dereniak, Eustace L.; Perry, David L.

    1992-05-01

    The objective of this project was twofold. The first objective was to characterize the Hughes Aircraft Company CRC-365 platinum silicide imaging device in a starting infrared sensor system. The CRC-365 is a hybrid 256 x 256 IR focal plane array that operates in the 3-5 micrometer thermal infrared band. A complete sensor and computer interface were built for these tests, using, plans provided by the Rome Laboratory at Hanscom AFB. Testing of the device revealed largely satisfactory performance, with notable exception in the areas of temporal response, temporal noise, and electrical crosstalk. The second objective of this research was to advance the understanding of how detector nonuniformity effects reduce the performance of sensors of this type. Notable accomplishments in this area included a complete linear analysis of corrected thermal imaging in platinum silicide sensors, a nonlinear analysis of the CRC-365's expected performance, analysis of its actual performance when operated with nonuniformity correction, and the development of a new figure of merit. It was demonstrated that the CRC-365 is capable of maintaining background-noise-limited performance over at least a 40 K target temperature range, when operated with two-point nonuniformity correction.

  10. Continuous and Collective Grain Rotation in Nanoscale Thin Films during Silicidation

    NASA Astrophysics Data System (ADS)

    Richard, M.-I.; Fouet, J.; Texier, M.; Mocuta, C.; Guichet, C.; Thomas, O.

    2015-12-01

    Texture evolution is an important issue in materials and nanosciences. Understanding it is fundamental for controlling the final orientation, which in fine controls the desired properties of nanodevices. Here, we reveal the formation of a peculiar texture during the silicidation of nanoscale Pd thin films. We demonstrate that the crystallographic relationship observed between the silicide and the Si(001) substrate, named gyroaxy, evolves continuously and collectively during silicidation. This continuous rotation of the nanosized grains over a wide angular range is proposed to be associated with a diffusional mechanism.

  11. Process for stabilization of titanium silicide particulates within titanium aluminide containing metal matrix composites

    SciTech Connect

    Christodoulou, L.; Williams, J.C.; Riley, M.A.

    1990-04-10

    This paper describes a method for forming a final composite material comprising titanium silicide particles within a titanium aluminide containing matrix. It comprises: contacting titanium, silicon and aluminum at a temperature sufficient to initiate a reaction between the titanium and silicon to thereby form a first composite comprising titanium silicide particles dispersed within an aluminum matrix; admixing the first composite with titanium and zirconium to form a mixture; heating the mixture to a temperature sufficient to convert at least a portion of the aluminum matrix to titanium aluminide; and recovering a final composite material comprising titanium silicide particles dispersed within a titanium aluminide containing matrix.

  12. Conformal Ni-silicide formation over three-dimensional device structures

    SciTech Connect

    Zhu Zhiwei; Zhang Shili; Gao Xindong; Kubart, Tomas; Zhang Zhibin; Wu Dongping

    2012-07-30

    This letter reports on conformal formation of ultrathin Ni-silicide films over a three-dimension structure relevant to the most advanced tri-gate transistor architecture. This is achieved by combining ionization of the sputtered Ni atoms with application of an appropriate bias to the Si substrate during the sputter-deposition of Ni films. In comparison, use of ordinary DC sputtering for Ni deposition results in thinner or less uniform silicide films on the vertical sidewalls than on the top surface of the three-dimensional structure. The roughened Si sidewall surface is ascribed to be responsible for a deteriorated thermal stability of the resultant silicide films.

  13. Air Manganese Study

    EPA Pesticide Factsheets

    In November 2011 US EPA researchers conducted a health study of airborne manganese exposure in East Liverpool, Ohio. This Web site discusses preliminary results of the study and provides background and other related information.

  14. Controlled assembly of graphene-capped nickel, cobalt and iron silicides

    NASA Astrophysics Data System (ADS)

    Vilkov, O.; Fedorov, A.; Usachov, D.; Yashina, L. V.; Generalov, A. V.; Borygina, K.; Verbitskiy, N. I.; Grüneis, A.; Vyalikh, D. V.

    2013-07-01

    The unique properties of graphene have raised high expectations regarding its application in carbon-based nanoscale devices that could complement or replace traditional silicon technology. This gave rise to the vast amount of researches on how to fabricate high-quality graphene and graphene nanocomposites that is currently going on. Here we show that graphene can be successfully integrated with the established metal-silicide technology. Starting from thin monocrystalline films of nickel, cobalt and iron, we were able to form metal silicides of high quality with a variety of stoichiometries under a Chemical Vapor Deposition grown graphene layer. These graphene-capped silicides are reliably protected against oxidation and can cover a wide range of electronic materials/device applications. Most importantly, the coupling between the graphene layer and the silicides is rather weak and the properties of quasi-freestanding graphene are widely preserved.

  15. Controlled assembly of graphene-capped nickel, cobalt and iron silicides.

    PubMed

    Vilkov, O; Fedorov, A; Usachov, D; Yashina, L V; Generalov, A V; Borygina, K; Verbitskiy, N I; Grüneis, A; Vyalikh, D V

    2013-01-01

    The unique properties of graphene have raised high expectations regarding its application in carbon-based nanoscale devices that could complement or replace traditional silicon technology. This gave rise to the vast amount of researches on how to fabricate high-quality graphene and graphene nanocomposites that is currently going on. Here we show that graphene can be successfully integrated with the established metal-silicide technology. Starting from thin monocrystalline films of nickel, cobalt and iron, we were able to form metal silicides of high quality with a variety of stoichiometries under a Chemical Vapor Deposition grown graphene layer. These graphene-capped silicides are reliably protected against oxidation and can cover a wide range of electronic materials/device applications. Most importantly, the coupling between the graphene layer and the silicides is rather weak and the properties of quasi-freestanding graphene are widely preserved.

  16. Controlled assembly of graphene-capped nickel, cobalt and iron silicides

    PubMed Central

    Vilkov, O.; Fedorov, A.; Usachov, D.; Yashina, L. V.; Generalov, A. V.; Borygina, K.; Verbitskiy, N. I.; Grüneis, A.; Vyalikh, D. V.

    2013-01-01

    The unique properties of graphene have raised high expectations regarding its application in carbon-based nanoscale devices that could complement or replace traditional silicon technology. This gave rise to the vast amount of researches on how to fabricate high-quality graphene and graphene nanocomposites that is currently going on. Here we show that graphene can be successfully integrated with the established metal-silicide technology. Starting from thin monocrystalline films of nickel, cobalt and iron, we were able to form metal silicides of high quality with a variety of stoichiometries under a Chemical Vapor Deposition grown graphene layer. These graphene-capped silicides are reliably protected against oxidation and can cover a wide range of electronic materials/device applications. Most importantly, the coupling between the graphene layer and the silicides is rather weak and the properties of quasi-freestanding graphene are widely preserved. PMID:23835625

  17. Stacked silicide/silicon mid- to long-wavelength infrared detector

    NASA Technical Reports Server (NTRS)

    Maserjian, Joseph (Inventor)

    1990-01-01

    The use of stacked Schottky barriers (16) with epitaxially grown thin silicides (10) combined with selective doping (22) of the barriers provides high quantum efficiency infrared detectors (30) at longer wavelengths that is compatible with existing silicon VLSI technology.

  18. Stacked silicide/silicon mid- to long-wavelength infrared detector

    DOEpatents

    Maserjian, Joseph

    1990-03-13

    The use of stacked Schottky barriers (16) with epitaxially grown thin silicides (10) combined with selective doping (22) of the barriers provides high quantum efficiency infrared detectors (30) at longer wavelengths that is compatible with existing silicon VLSI technology.

  19. Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements

    PubMed Central

    2011-01-01

    We examine nickel silicide as a viable ohmic contact metallization for low-temperature, low-magnetic-field transport measurements of atomic-scale devices in silicon. In particular, we compare a nickel silicide metallization with aluminium, a common ohmic contact for silicon devices. Nickel silicide can be formed at the low temperatures (<400°C) required for maintaining atomic precision placement in donor-based devices, and it avoids the complications found with aluminium contacts which become superconducting at cryogenic measurement temperatures. Importantly, we show that the use of nickel silicide as an ohmic contact at low temperatures does not affect the thermal equilibration of carriers nor contribute to hysteresis in a magnetic field. PMID:21968083

  20. Status of the atomized uranium silicide fuel development at KAERI

    SciTech Connect

    Kim, C.K.; Kim, K.H.; Park, H.D.; Kuk, I.H.

    1997-08-01

    While developing KMRR fuel fabrication technology an atomizing technique has been applied in order to eliminate the difficulties relating to the tough property of U{sub 3}Si and to take advantage of the rapid solidification effect of atomization. The comparison between the conventionally comminuted powder dispersion fuel and the atomized powder dispersion fuel has been made. As the result, the processes, uranium silicide powdering and heat treatment for U{sub 3}Si transformation, become simplified. The workability, the thermal conductivity and the thermal compatibility of fuel meat have been investigated and found to be improved due to the spherical shape of atomized powder. In this presentation the overall developments of atomized U{sub 3}Si dispersion fuel and the planned activities for applying the atomizing technique to the real fuel fabrication are described.

  1. Work function characterization of solution-processed cobalt silicide

    DOE PAGES

    Ullah, Syed Shihab; Robinson, Matt; Hoey, Justin; ...

    2012-05-08

    Cobalt silicide thin films were prepared by spin-coating Si6H12-based inks onto various substrates followed by a thermal treatment. The work function of the solution processed Co-Si was determined by both capacitance-voltage (C-V) measurements of metal-oxide-semiconductor (MOS) structures as well as by ultraviolet photoelectron spectroscopy (UPS). The UPS-derived work function was 4.80 eV for a Co-Si film on Si (100) while C-V of MOS structures yielded a work function of 4.36 eV where the metal was solution-processed Co-Si, the oxide was SiO2 and the semiconductor was a B-doped Si wafer.

  2. Europium Silicide – a Prospective Material for Contacts with Silicon

    NASA Astrophysics Data System (ADS)

    Averyanov, Dmitry V.; Tokmachev, Andrey M.; Karateeva, Christina G.; Karateev, Igor A.; Lobanovich, Eduard F.; Prutskov, Grigory V.; Parfenov, Oleg E.; Taldenkov, Alexander N.; Vasiliev, Alexander L.; Storchak, Vyacheslav G.

    2016-05-01

    Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics.

  3. Silicide formation and the generation of point defects in silicon

    NASA Astrophysics Data System (ADS)

    Svensson, B. G.; Aboelfotoh, M. O.; Lindström, J. L.

    1991-06-01

    The annealing behavior of the divacancy (V2) acceptor levels in silicon is investigated with the use of Schottky-barrier structures formed by the deposition of copper on n-type silicon irradiated with 2-MeV electrons. At temperatures below ~150 °C an anomalously high annealing rate of the V2 centers is observed, and we believe that the fast-diffusing interstitial Cu+ passivates their electrical activity and forms neutral complexes. In the temperature range 150-200 °C, where the metal-rich silicide η'-Cu3Si forms, the concentration of V2 remains almost constant, and we find no evidence for the injection of silicon self-interstitials during the formation of η'-Cu3Si, in contrast to recent experiments.

  4. Capping of rare earth silicide nanowires on Si(001)

    SciTech Connect

    Appelfeller, Stephan; Franz, Martin; Kubicki, Milan; Dähne, Mario; Reiß, Paul; Niermann, Tore; Lehmann, Michael; Schubert, Markus Andreas

    2016-01-04

    The capping of Tb and Dy silicide nanowires grown on Si(001) was studied using scanning tunneling microscopy and cross-sectional high-resolution transmission electron microscopy. Several nanometers thick amorphous Si films deposited at room temperature allow an even capping, while the nanowires maintain their original structural properties. Subsequent recrystallization by thermal annealing leads to more compact nanowire structures and to troughs in the Si layer above the nanowires, which may even reach down to the nanowires in the case of thin Si films, as well as to V-shaped stacking faults forming along (111) lattice planes. This behavior is related to strain due to the lattice mismatch between the Si overlayer and the nanowires.

  5. Postirradiation analysis of experimental uranium-silicide dispersion fuel plates

    SciTech Connect

    Hofman, G.L.; Neimark, L.A.

    1985-01-01

    Low-enriched uranium silicide dispersion fuel plates were irradiated to maximum burnups of 96% of /sup 235/U. Fuel plates containing 33 v/o U/sub 3/Si and U/sub 3/Si/sub 2/ behaved very well up to this burnup. Plates containing 33 v/o U/sub 3/Si-Al pillowed between 90 and 96% burnup of the fissile atoms. More highly loaded U/sub 3/Si-Al plates, up to 50 v/o were found to pillow at lower burnups. Plates containing 40 v/o U/sub 3/Si showed an increase swelling rate around 85% burnup. 5 refs., 10 figs.

  6. A DFT study of hypercoordinated copper silicide nanotubes

    NASA Astrophysics Data System (ADS)

    Ai, Ling-Yan; Zhao, Hui-Yan; Wang, Jing; Liu, Ying

    2017-03-01

    The stability and electronic structures of copper silicide nanotubes (CuSiNTs) are calculated using first-principles density functional theory. Here these CuSiNTs of various different diameters, chiral vectors and morphologies were obtained by rolling up a novel two-dimensional hypercoordinated Cu2Si monolayer with high stability (Yang et al., J. Am. Chem. Soc. 137 (2015) 2757-2762). Electronic structure calculations showed that these CuSiNTs are conductors independent of their chiral vectors, diameters and morphologies. In addition, molecular dynamics (MD) simulations of the (6, 0) tube and the (8, 4) tube were performed. It was found that the (8, 4) tube has very good thermal stability and that its structure does not break down during MD simulations at initial temperatures up to 1500 K. Based on their electrical conductivity and good thermal stability, these CuSiNTs are promising candidates to envision application as metallic connections in nanoscale electronic devices.

  7. Silicon-nanowire transistors with intruded nickel-silicide contacts.

    PubMed

    Weber, Walter M; Geelhaar, Lutz; Graham, Andrew P; Unger, Eugen; Duesberg, Georg S; Liebau, Maik; Pamler, Werner; Chèze, Caroline; Riechert, Henning; Lugli, Paolo; Kreupl, Franz

    2006-12-01

    Schottky barrier field effect transistors based on individual catalytically-grown and undoped Si-nanowires (NW) have been fabricated and characterized with respect to their gate lengths. The gate length was shortened by the axial, self-aligned formation of nickel-silicide source and drain segments along the NW. The transistors with 10-30 nm NW diameters displayed p-type behaviour, sustained current densities of up to 0.5 MA/cm2, and exhibited on/off current ratios of up to 10(7). The on-currents were limited and kept constant by the Schottky contacts for gate lengths below 1 microm, and decreased exponentially for gate lengths exceeding 1 microm.

  8. Pt redistribution during Ni(Pt) silicide formation

    SciTech Connect

    Demeulemeester, J.; Smeets, D.; Vantomme, A.; Van Bockstael, C.; Detavernier, C.; Comrie, C. M.; Barradas, N. P.; Vieira, A.

    2008-12-29

    We report on a real-time Rutherford backscattering spectrometry study of the erratic redistribution of Pt during Ni silicide formation in a solid phase reaction. The inhomogeneous Pt redistribution in Ni(Pt)Si films is a consequence of the low solubility of Pt in Ni{sub 2}Si compared to NiSi and the limited mobility of Pt in NiSi. Pt further acts as a diffusion barrier and resides in the Ni{sub 2}Si grain boundaries, significantly slowing down the Ni{sub 2}Si and NiSi growth kinetics. Moreover, the observed incorporation of a large amount of Pt in the NiSi seeds indicates that Pt plays a major role in selecting the crystallographic orientation of these seeds and thus in the texture of the resulting Ni{sub 1-x}Pt{sub x}Si film.

  9. Silicide/silicon Schottky barriers under hydrostatic pressure

    NASA Astrophysics Data System (ADS)

    Werner, Jürgen H.

    1989-04-01

    We investigate several silicide/silicon Schottky barrier heights under hydrostatic pressures up to 10 kbar. The barriers of polycrystalline TiSi2, PtSi, and WTi on n-type Si decrease with -1.l3, -1.35, and -1.42 meV/kbar, respectively. The coefficients for A- and B-type NiSi2/Si amount to -0.77 and -0.89 meV/kbar and are too small to support models which ascribe the l40 meV barrier difference of these two types to different interface bond lengths. The pressure coefficients are, on the other hand, within a range of predictions of Cardona and Christensen which are based on pure bulk properties.

  10. Europium Silicide – a Prospective Material for Contacts with Silicon

    PubMed Central

    Averyanov, Dmitry V.; Tokmachev, Andrey M.; Karateeva, Christina G.; Karateev, Igor A.; Lobanovich, Eduard F.; Prutskov, Grigory V.; Parfenov, Oleg E.; Taldenkov, Alexander N.; Vasiliev, Alexander L.; Storchak, Vyacheslav G.

    2016-01-01

    Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics. PMID:27211700

  11. Controlled formation and resistivity scaling of nickel silicide nanolines.

    PubMed

    Li, Bin; Luo, Zhiquan; Shi, Li; Zhou, JiPing; Rabenberg, Lew; Ho, Paul S; Allen, Richard A; Cresswell, Michael W

    2009-02-25

    We demonstrate a top-down method for fabricating nickel mono-silicide (NiSi) nanolines (also referred to as nanowires) with smooth sidewalls and line widths down to 15 nm. Four-probe electrical measurements reveal that the room temperature electrical resistivity of the NiSi nanolines remains constant as the line widths are reduced to 23 nm. The resistivity at cryogenic temperatures is found to increase with decreasing line width. This finding can be attributed to electron scattering at the sidewalls and is used to deduce an electron mean free path of 6.3 nm for NiSi at room temperature. The results suggest that NiSi nanolines with smooth sidewalls are able to meet the requirements for implementation at the 22 nm technology node without degradation of device performance.

  12. [Function and disease in manganese].

    PubMed

    Kimura, Mieko

    2016-07-01

    Manganese is a metal that has been known named a Greek word "Magnesia" meaning magnesia nigra from Roman Empire. Manganese provide the wide range of metablic function and the multiple abnomalities from its deficiency or toxicity. In 1931, the essentiality of manganese was demonstrated with the authoritative poor growth and declined reproduction in its deficiency. Manganese deficiency has been recognized in a number of species and its signs are impaired growth, impaired reproduction, ataxia, skeletal abnormalities and disorders in lipid and carbohydrate metabolism. Manganese toxicity is also acknowledged as health hazard for animals and humans. Here manganese nutrition, metabolism and metabolic function are summarized.

  13. Development of molecular dynamics potential for uranium silicide fuels

    SciTech Connect

    Yu, Jianguo; Zhang, Yongfeng; Hales, Jason D.

    2016-09-01

    Use of uranium–silicide (U-Si) in place of uranium dioxide (UO2) is one of the promising concepts being proposed to increase the accident tolerance of nuclear fuels. This is due to a higher thermal conductivity than UO2 that results in lower centerline temperatures. U-Si also has a higher fissile density, which may enable some new cladding concepts that would otherwise require increased enrichment limits to compensate for their neutronic penalty. However, many critical material properties for U-Si have not been determined experimentally. For example, silicide compounds (U3Si2 and U3Si) are known to become amorphous under irradiation. There was clear independent experimental evidence to support a crystalline to amorphous transformation in those compounds. However, it is still not well understood how the amorphous transformation will affect on fuel behavior. It is anticipated that modeling and simulation may deliver guidance on the importance of various properties and help prioritize experimental work. In order to develop knowledge-based models for use at the engineering scale with a minimum of empirical parameters and increase the predictive capabilities of the developed model, inputs from atomistic simulations are essential. First-principles based density functional theory (DFT) calculations will provide the most reliable information. However, it is probably not possible to obtain kinetic information such as amorphization under irradiation directly from DFT simulations due to size and time limitations. Thus, a more feasible way may be to employ molecular dynamics (MD) simulation. Unfortunately, so far no MD potential is available for U-Si to discover the underlying mechanisms. Here, we will present our recent progress in developing a U-Si potential from ab initio data. This work is supported by the Nuclear Energy Advanced Modeling and Simulation (NEAMS) program funded by the U.S. Department of Energy, Office of Nuclear Energy.

  14. Copper silicide formation by rapid thermal processing and induced room-temperature Si oxide growth

    NASA Astrophysics Data System (ADS)

    Setton, M.; Van der Spiegel, J.; Rothman, B.

    1990-07-01

    The growth of copper silicide has been studied by rapid thermal processing (RTP) of 500 Å of Cu on Si substrates. Interaction between the diffusing metal and Si starts at 250-300 °C. Annealing at higher temperatures yields complete silicidation to Cu3Si. This leads to strong modifications of the Auger line shapes of both Si and Cu. A plasmon peak located 20 eV below the main peak is the fingerprint in the Cu spectrum. Strong features at 80, 85.6, 89.2, and 93.2 eV as well as a 1 eV shift of the 90.4 eV peak appear in the Si L2,3VV spectrum. Whether for Cu films annealed in nitrogen or in vacuum, exposure of the silicide to air results in the growth of silicon oxide at room temperature and continues until the silicide layer is totally converted. This repeatable and controllable oxidation of silicon is accompanied by changes in resistivity and color reflecting the extent of the process. For Cu/CoSi2/Si structures, the cobalt silicide acts as a transport medium for the growth of the copper silicide and also serves as a cap preventing the oxidation of the final CoSi2/Cu3Si/Si contacts

  15. Kinetics of nickel silicide growth in silicon nanowires: From linear to square root growth

    SciTech Connect

    Yaish, Y. E.; Beregovsky, M.; Katsman, A.; Cohen, G. M.

    2011-05-01

    The common practice for nickel silicide formation in silicon nanowires (SiNWs) relies on axial growth of silicide along the wire that is initiated from nickel reservoirs at the source and drain contacts. In the present work the silicide intrusions were studied for various parameters including wire diameter (25-50 nm), annealing time (15-120 s), annealing temperature (300-440 deg. C), and the quality of the initial Ni/Si interface. The silicide formation was investigated by high-resolution scanning electron microscopy, high-resolution transmission electron microscopy (TEM), and atomic force microscopy. The main part of the intrusion formed at 420 deg. C consists of monosilicide NiSi, as was confirmed by energy dispersive spectroscopy STEM, selected area diffraction TEM, and electrical resistance measurements of fully silicided SiNWs. The kinetics of nickel silicide axial growth in the SiNWs was analyzed in the framework of a diffusion model through constrictions. The model calculates the time dependence of the intrusion length, L, and predicts crossover from linear to square root time dependency for different wire parameters, as confirmed by the experimental data.

  16. Synthesis and design of silicide intermetallic materials. 1998 annual progress report

    SciTech Connect

    Petrovic, J.J.; Castro, R.G.; Butt, D.P.; Park, Y.; Vaidya, R.U.; Hollis, K.J.; Kung, H.H.

    1999-03-01

    The overall objective of this program is to develop structural silicide-based materials with optimum combinations of elevated temperature strength/creep resistance, low temperature fracture toughness, and high temperature oxidation and corrosion resistance for applications of importance to the US processing industry. A further objective is to develop silicide-based prototype industrial components. The ultimate aim of the program is to work with industry to transfer the structural silicide materials technology to the private sector in order to promote international competitiveness in the area of advanced high temperature materials and important applications in major energy-intensive US processing industries. The program presently has a number of developing industrial connections, including a CRADA with Johns Manville Corporation targeted at the area of MoSi{sub 2}-based high temperature materials and components for fiberglass melting and processing applications. The authors are also developing an interaction with the Institute of Gas Technology (IGT) to develop silicides for high temperature radiant gas burner applications, for the glass and other industries. With Combustion Technology Inc., they are developing silicide-based periscope sight tubes for the direct observation of glass melts. With Accutru International Corporation, they are developing silicide-based protective sheaths for self-verifying temperature sensors which may be used in glass furnaces and other industrial applications. The progress made on the program in this period is summarized.

  17. Effects of temperature dependent pre-amorphization implantation on NiPt silicide formation and thermal stability on Si(100)

    SciTech Connect

    Ozcan, Ahmet S.; Wall, Donald; Jordan-Sweet, Jean; Lavoie, Christian

    2013-04-29

    Using temperature controlled Si and C ion implantation, we studied the effects of pre-amorphization implantation on NiPt alloy silicide phase formation. In situ synchrotron x-ray diffraction and resistance measurements were used to monitor phase and morphology evolution in silicide films. Results show that substrate amorphization strongly modulate the nucleation of silicide phases, regardless of implant species. However, morphological stability of the thin films is mainly enhanced by C addition, independently of the amorphization depth.

  18. On the size-dependent magnetism and all-optical magnetization switching of transition-metal silicide nanostructures

    SciTech Connect

    Glushkov, G. I.; Tuchin, A. V.; Popov, S. V.; Bityutskaya, L. A.

    2015-12-15

    Theoretical investigations of the electronic structure, synthesis, and all-optical magnetization switching of transition-metal silicide nanostructures are reported. The magnetic moment of the nanostructures is studied as a function of the silicide cluster size and configuration. The experimentally demonstrated magnetization switching of nanostructured nickel silicide by circularly polarized light makes it possible to create high-speed storage devices with high density data recording.

  19. Manganese As a Metal Accumulator

    EPA Science Inventory

    Manganese deposits in water distribution systems accumulate metals, radionuclides and oxyanions by a combination of surface complexation, adsorption and solid substitution, as well as a combination of oxidation followed by manganese reduction and sorption of the oxidized constitu...

  20. Manganese As a Metal Accumulator

    EPA Science Inventory

    Manganese deposits in water distribution systems accumulate metals, radionuclides and oxyanions by a combination of surface complexation, adsorption and solid substitution, as well as a combination of oxidation followed by manganese reduction and sorption of the oxidized constitu...

  1. Occupational exposure to manganese.

    PubMed Central

    Sarić, M; Markićević, A; Hrustić, O

    1977-01-01

    The relationship between the degree of exposure and biological effects of manganese was studied in a group of 369 workers employed in the production of ferroalloys. Two other groups of workers, from an electrode plant and from an aluminium rolling mill, served as controls. Mean manganese concentrations at work places where ferroalloys were produced varied from 0-301 to 20-442 mg/m3. The exposure level of the two control groups was from 2 to 30 microgram/m3 and from 0-05 to 0-07 microgram/m3, in the electrode plant and rolling mill respectively. Sixty-two (16-8%) manganese alloy workers showed some signs of neurological impairment. These signs were noticeably less in the two control groups (5-8% and 0%) than in the occupationally exposed group. Subjective symptoms, which are nonspecific but may be symptoms of subclinical manganism, were not markedly different in the three groups. However, in the manganese alloy workers some of the subjective symptoms occurred more frequently in heavier smokers than in light smokers or nonsmokers. Heavier smokers engaged in manganese alloy production showed some of the subjective symptoms more often than heavier smokers from the control groups. PMID:871441

  2. Manganese Research Health Project (MHRP)

    DTIC Science & Technology

    2006-01-01

    MRI) of Manganese Role of Manganese in Prion Disease Pathogenesis Accumulation in the Rat Brain Associated with Iron - Deficiency and Supplementation...Imaging (MRI) of Manganese Accumulation in the Rat Brain Associated with Iron -Deficiency and Supplementation Aschner, Michael, Ph.D. Fitsanakis, Vanessa...Aschner (2006). Determination of brain manganese and iron accumulation using magnetic resonance imaging (MRI) and atomic absorption spectroscopy. 4 2 nd

  3. Manganese biomining: A review.

    PubMed

    Das, A P; Sukla, L B; Pradhan, N; Nayak, S

    2011-08-01

    Biomining comprises of processing and extraction of metal from their ores and concentrates using microbial techniques. Currently this is used by the mining industry to extract copper, uranium and gold from low grade ores but not for low grade manganese ore in industrial scale. The study of microbial genomes, metabolites and regulatory pathways provide novel insights to the metabolism of bioleaching microorganisms and their synergistic action during bioleaching operations. This will promote understanding of the universal regulatory responses that the biomining microbial community uses to adapt to their changing environment leading to high metal recovery. Possibility exists of findings ways to imitate the entire process during industrial manganese biomining endeavor. This paper reviews the current status of manganese biomining research operations around the world, identifies factors that drive the selection of biomining as a processing technology, describes challenges in exploiting these innovations, and concludes with a discussion of Mn biomining's future.

  4. Oxygen chemisorption and oxide formation on Ni silicide surfaces at room temperature

    NASA Astrophysics Data System (ADS)

    Valeri, S.; Del Pennino, U.; Lomellini, P.; Sassaroli, P.

    1984-10-01

    Auger spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) have been used in a comparative study of the room temperature oxidation of Ni silicides of increasing silicon content, from Ni3Si to NiSi2. The results were compared with those for the oxidation of pure Si and Ni. All suicide surfaces in the exposure range between 0.2 and 104 L follow two-step oxidation kinetics: the first step is characterized by an oxygen uptake rate higher than in the second one. Attention was focused on the oxygen induced modifications of metal and silicon AES and XPS spectra in silicides, which are indicative of changes in the local electronic structure and in the chemical bonding. In general oxygen bonds with silicon leaving the metal unaffected; however, at high exposures, characteristic feature of the Ni-oxygen bonds appear in the Ni(MVV) Auger line of the Ni-rich silicides. The presence of Ni atoms enhances considerably the Si oxidation process in silicides with respect to pure Si, in terms both of a higher Si oxidation state and a higher oxygen uptake; this enhancement is stronger in Ni-rich silicides than in Si-rich silicides. The oxygen induced contributions in the Si(LVV) Auger line show structures at 76 and 83 eV, and those in the Si 2p photoemission spectra show binding energy shifts between -1 and -3.8 eV; we conclude that the oxidation products are mainly silicon suboxides, like Si2O3 and SiO; only on Ni3 Si at 104 L, a significant contribution of SiO2 was found. The Ni catalytic effect on Si oxidation has been discussed in terms of the suicide heat of formation, of the breaking of the silicon sp3 configuration in silicides and of the metal atom dissociative effect on the O2 molecule.

  5. Iron Silicide Formation by Precipitation in a Silicon Bicrystal

    NASA Astrophysics Data System (ADS)

    Portier, X.; Ihlal, A.; Rizk, R.

    1997-05-01

    Segregation and precipitation of iron in a = 25 silicon bicrystal have been carefully investigated by means of high resolution electron microscopy and energy dispersive X-ray analyses, in combination with capacitance and electron beam induced current measurements. After intentional incorporation of iron in the bicrystal by a simple heating procedure, it was shown that a non-equilibrium segregation of iron has occurred after rapid cooling whereas iron precipitates have been produced upon slow cooling. The silicides are formed mainly at the grain boundary area and they were found to belong to the -FeSi cubic or -FeSi2 tetragonal phases. Each precipitate is simply oriented with respect to one of the two grains without any preference between them. The orientation relationships were found in perfect agreement with those observed for the corresponding iron silicides that are epitaxially grown on oriented silicon substrates. Barrier and recombinative effects on the contaminated (1200 °C) and slowly cooled samples have been detected. These effects have been associated with the formation of iron silicides at the grain boundary. La ségrégation ainsi que la précipitation de siliciures de fer au joint de grains = 25 de silicium ont été etudiées en utilisant la dispersion d'énergie des électrons, la microscopie électronique en transmission haute résolution ainsi que des mesures électriques capacitives et des mesures de courants induits par faisceau d'électrons. A la suite d'une contamination volontaire par diffusion thermique du fer au sein du bicristal, nous avons montré qu'une ségrégation hors-équilibre d'atomes de fer est obtenue après un refroidissement rapide alors qu'un refroidissement lent a pour conséquence la formation de siliciures de fer. Ces petits cristaux de siliciures croissent de préférence au niveau du joint de grains et ils ont pour phase, la phase cubique -FeSi ou la phase quadratique α-FeSi2. Chaque précipité est orienté simplement

  6. Silicide-phase evolution and platinum redistribution during silicidation of Ni0.95Pt0.05/Si(100) specimens

    NASA Astrophysics Data System (ADS)

    Adusumilli, Praneet; Seidman, David N.; Murray, Conal E.

    2012-09-01

    We investigated the temporal evolution of nickel-silicide phase-formation and the simultaneous redistribution of platinum during silicidation of a 10 nm thick Ni0.95Pt0.05 film on a Si(100) substrate. Grazing incidence x-ray diffraction (GIXRD) and atom-probe tomography (APT) measurements were performed on as-deposited films and after rapid thermal annealing (RTA) at 320 or 420 °C for different times. Observation of the Ni2Si phase in as-deposited films, both with and without platinum alloying, is attributed to surface preparation. RTA at 320 °C for 5 s results in the formation of the low-resistivity NiSi intermetallic phase and nickel-rich phases, Ni2Si and Ni3Si2, as demonstrated by GIXRD measurements. At 420 °C for 5 s, the NiSi phase grows outward from the silicide/Si(100) interface by consuming the nickel-rich silicide phases. On increasing the annealing time at 420 °C to 30 min, this reaction is driven towards completion. The nickel-silicide/silicon interface is reconstructed in three-dimensions employing APT and its chemical root-mean-square roughness, based on a silicon isoconcentration surface, decreases to 0.6 nm with the formation of the NiSi phase during silicidation. Pt redistribution is affected by the simultaneous reaction between Ni and Si during silicidation, and it influences the resulting microstructure and thermal stability of the NiSi phase. Short-circuit diffusion of Pt via grain boundaries in NiSi is observed, which affects the resultant grain size, morphology, and possibly the preferred orientation of the NiSi grains. Pt segregates at the NiSi/Si(100) heterophase interface and may be responsible for the morphological stabilization of NiSi against agglomeration to temperatures greater than 650 °C. The Gibbsian interfacial excess of Pt at the NiSi/Si(100) interface after RTA at 420 °C for 5 s is 1.2 ± 0.01 atoms nm-2 and then increases to 2.1 ± 0.02 atoms nm-2 after 30 min at 420 °C, corresponding to a decrease in the interfacial free

  7. Influence of Ni silicide phases on effective work function modulation with Al-pileup in the Ni fully silicided gate/HfSiON system

    NASA Astrophysics Data System (ADS)

    Tsuchiya, Yoshinori; Yoshiki, Masahiko; Koga, Junji; Nishiyama, Akira; Koyama, Masato

    2009-08-01

    Influences of Ni silicide phases on the effective work function (Φeff) modulation effect with Al incorporation has been investigated in the Ni silicide/HfSiON systems. We formed metal-insulator-semiconductor capacitors with Al incorporated Ni silicide (NiSi, Ni2Si, and Ni3Si) gates on HfSiON by Al solid-phase diffusion (Al-SPD) process or Al ion implantation (I/I) process. In the Al-SPD process, Al is deposited on Ni silicide gate. In the Al-I/I process, Al ions were doped in the upper part of Ni silicide layer. In both cases, we performed Al drive-in annealing under the condition of 450 °C for 30 min in N2 ambient. It is found that the flat-band voltage (Vfb) values of Al incorporated NiSi and Ni2Si gates shift negatively and identical independent of Al incorporation processes. A highly concentrated Al piled-up layer, which induces Φeff modulation to Al-Φeff value, seems to correspond to the Vfb modulation. On the other hand, Al incorporation has little influence on Φeff at the Ni3Si/HfSiON interface. We revealed that a lower Al diffusion coefficient in Ni3Si phase reduces the Al interface density at the Ni3Si/HfSiON interface. In addition, Al piled-up layer is inherently unstable at the Ni3Si/HfSiON interface, which is confirmed from the detailed investigation about thermal stability of Al piled-up layer by using phase change process from NiSi to Ni3Si phase.

  8. Effect of silicide/silicon hetero-junction structure on thermal conductivity and Seebeck coefficient.

    PubMed

    Choi, Wonchul; Park, Young-Sam; Hyun, Younghoon; Zyung, Taehyoung; Kim, Jaehyeon; Kim, Soojung; Jeon, Hyojin; Shin, Mincheol; Jang, Moongyu

    2013-12-01

    We fabricated a thermoelectric device with a silicide/silicon laminated hetero-structure by using RF sputtering and rapid thermal annealing. The device was observed to have Ohmic characteristics by I-V measurement. The temperature differences and Seebeck coefficients of the proposed silicide/silicon laminated and bulk structure were measured. The laminated thermoelectric device shows suppression of heat flow from the hot to cold side. This is supported by the theory that the atomic mass difference between silicide and silicon creates a scattering center for phonons. The major impact of our work is that phonon transmission is suppressed at the interface between silicide and silicon without degrading electrical conductivity. The estimated thermal conductivity of the 3-layer laminated device is 126.2 +/- 3.7 W/m. K. Thus, by using the 3-layer laminated structure, thermal conductivity is reduced by around 16% compared to bulk silicon. However, the Seebeck coefficient of the thermoelectric device is degraded compared to that of bulk silicon. It is understood that electrical conductivity is improved by using silicide as a scattering center.

  9. Manganese, Metallogenium, and Martian Microfossils

    NASA Technical Reports Server (NTRS)

    Stein, L. Y.; Nealson, K. H.

    1999-01-01

    Manganese could easily be considered an abundant element in the Martian regolith, assuming that the composition of martian meteorites reflects the composition of the planet. Mineralogical analyses of 5 SNC meteorites have revealed an average manganese oxide concentration of 0.48%, relative to the 0.1% concentration of manganese found in the Earth's crust. On the Earth, the accumulation of manganese oxides in oceans, soils, rocks, sedimentary ores, fresh water systems, and hydrothermal vents can be largely attributed to microbial activity. Manganese is also a required trace nutrient for most life forms and participates in many critical enzymatic reactions such as photosynthesis. The wide-spread process of bacterial manganese cycling on Earth suggests that manganese is an important element to both geology and biology. Furthermore, there is evidence that bacteria can be fossilized within manganese ores, implying that manganese beds may be good repositories for preserved biomarkers. A particular genus of bacteria, known historically as Metallogenium, can form star-shaped manganese oxide minerals (called metallogenium) through the action of manganese oxide precipitation along its surface. Fossilized structures that resemble metallogenium have been found in Precambrian sedimentary formations and in Cretaceous-Paleogene cherts. The Cretaceous-Paleogene formations are highly enriched in manganese and have concentrations of trace elements (Fe, Zn, Cu, and Co) similar to modern-day manganese oxide deposits in marine environments. The appearance of metallogenium-like fossils associated with manganese deposits suggests that bacteria may be preserved within the minerals that they form. Additional information is contained in the original extended abstract.

  10. Rapid epitaxy-free graphene synthesis on silicidated polycrystalline platinum

    PubMed Central

    Babenko, Vitaliy; Murdock, Adrian T.; Koós, Antal A.; Britton, Jude; Crossley, Alison; Holdway, Philip; Moffat, Jonathan; Huang, Jian; Alexander-Webber, Jack A.; Nicholas, Robin J.; Grobert, Nicole

    2015-01-01

    Large-area synthesis of high-quality graphene by chemical vapour deposition on metallic substrates requires polishing or substrate grain enlargement followed by a lengthy growth period. Here we demonstrate a novel substrate processing method for facile synthesis of mm-sized, single-crystal graphene by coating polycrystalline platinum foils with a silicon-containing film. The film reacts with platinum on heating, resulting in the formation of a liquid platinum silicide layer that screens the platinum lattice and fills topographic defects. This reduces the dependence on the surface properties of the catalytic substrate, improving the crystallinity, uniformity and size of graphene domains. At elevated temperatures growth rates of more than an order of magnitude higher (120 μm min−1) than typically reported are achieved, allowing savings in costs for consumable materials, energy and time. This generic technique paves the way for using a whole new range of eutectic substrates for the large-area synthesis of 2D materials. PMID:26175062

  11. Rapid epitaxy-free graphene synthesis on silicidated polycrystalline platinum.

    PubMed

    Babenko, Vitaliy; Murdock, Adrian T; Koós, Antal A; Britton, Jude; Crossley, Alison; Holdway, Philip; Moffat, Jonathan; Huang, Jian; Alexander-Webber, Jack A; Nicholas, Robin J; Grobert, Nicole

    2015-07-15

    Large-area synthesis of high-quality graphene by chemical vapour deposition on metallic substrates requires polishing or substrate grain enlargement followed by a lengthy growth period. Here we demonstrate a novel substrate processing method for facile synthesis of mm-sized, single-crystal graphene by coating polycrystalline platinum foils with a silicon-containing film. The film reacts with platinum on heating, resulting in the formation of a liquid platinum silicide layer that screens the platinum lattice and fills topographic defects. This reduces the dependence on the surface properties of the catalytic substrate, improving the crystallinity, uniformity and size of graphene domains. At elevated temperatures growth rates of more than an order of magnitude higher (120 μm min(-1)) than typically reported are achieved, allowing savings in costs for consumable materials, energy and time. This generic technique paves the way for using a whole new range of eutectic substrates for the large-area synthesis of 2D materials.

  12. Ion beam-induced interfacial growth in Si and silicides

    NASA Astrophysics Data System (ADS)

    Fortuna, F.; Nédellec, P.; Ruault, M. O.; Bernas, H.; Lin, X. W.; Boucaud, P.

    1995-12-01

    We review the mechanisms and consequences of ion beam-induced epitaxial crystallization (IBIEC) in the transition metal- or rare earth-implanted {aSi}/{cSi} systems, as determined from in situ transmission electron microscopy (TEM) during irradiation, combined with channeling, high resolution TEM and optical measurements. IBIEC experiments on nm-size crystals confirm previously measured low values of interface roughness in IBIEC. We have performed interfacial growth simulations which indicate that the IBIEC process is, in fact, interface roughness-limited. They also suggest that interfacial growth processes are similar in several respects to surface growth processes, and that they largely determine (i) the growth habit of silicide precipitation, which is dominated by the interfacial energy, (ii) the possibility of trapping a large fraction of the impurities in non-equilibrium sites, leading to significant supersaturation. A consequence of this effect is to allow incorporation of large (over 300-fold supersaturation) Er concentrations in the substitutional sites of the Si lattice, leading to room-temperature photoluminescence (without any oxygen co-implantation). Evidence of a new, thermally induced instability in interfacial growth is presented: it displays both intermittency and very high growth rates, and is strongly affected by ion irradiation.

  13. Simulated Fission Gas Behavior in Silicide Fuel at LWR Conditions

    SciTech Connect

    Miao, Yinbin; Mo, Kun; Yacout, Abdellatif; Harp, Jason

    2016-09-15

    As a promising candidate for the accident tolerant fuel (ATF) used in light water reactors (LWRs), the fuel performance of uranium silicide (U3Si2) at LWR conditions needs to be well-understood. However, existing experimental post-irradiation examination (PIE) data are limited to the research reactor conditions, which involve lower fuel temperature compared to LWR conditions. This lack of appropriate experimental data significantly affects the development of fuel performance codes that can precisely predict the microstructure evolution and property degradation at LWR conditions, and therefore evaluate the qualification of U3Si2 as an AFT for LWRs. Considering the high cost, long timescale, and restrictive access of the in-pile irradiation experiments, this study aims to utilize ion irradiation to simulate the inpile behavior of the U3Si2 fuel. Both in situ TEM ion irradiation and ex situ high-energy ATLAS ion irradiation experiments were employed to simulate different types of microstructure modifications in U3Si2. Multiple PIE techniques were used or will be used to quantitatively analyze the microstructure evolution induced by ion irradiation so as to provide valuable reference for the development of fuel performance code prior to the availability of the in-pile irradiation data.

  14. High quality factor platinum silicide microwave kinetic inductance detectors

    NASA Astrophysics Data System (ADS)

    Szypryt, P.; Mazin, B. A.; Ulbricht, G.; Bumble, B.; Meeker, S. R.; Bockstiegel, C.; Walter, A. B.

    2016-10-01

    We report on the development of microwave kinetic inductance detectors (MKIDs) using platinum silicide as the sensor material. MKIDs are an emerging superconducting detector technology, capable of measuring the arrival times of single photons to better than two microseconds and their energies to around ten percent. Previously, MKIDs have been fabricated using either sub-stoichiometric titanium nitride or aluminum, but TiN suffers from the spatial inhomogeneities in the superconducting critical temperature and Al has a low kinetic inductance fraction, causing low detector sensitivity. To address these issues, we have instead fabricated the PtSi microresonators with the superconducting critical temperatures of 944 ± 12 mK and high internal quality factors ( Q i ≳ 10 6 ). These devices show typical quasiparticle lifetimes of τ q p ≈ 30 - 40 μ s and spectral resolution, R = λ / Δ λ , of 8 at 406.6 nm. We compare PtSi MKIDs to those fabricated with TiN and detail the substantial advantages that PtSi MKIDs have to offer.

  15. Oxidation/vaporization of silicide coated columbium base alloys

    NASA Technical Reports Server (NTRS)

    Kohl, F. J.; Stearns, C. A.

    1971-01-01

    Mass spectrometric and target collection experiments were made at 1600 K to elucidate the mode of oxidative vaporization of two columbium alloys, fused-slurry-coated with a complex silicide former (Si-20Cr-Fe). At oxygen pressures up to 0.0005 torr the major vapor component detected by mass spectrometry for oxidized samples was gaseous silicon monoxide. Analysis of condensates collected at oxygen pressures of 0.1, 1.0 and 10 torr revealed that chromium-, silicon-, iron- and tungsten- containing species were the major products of vaporization. Equilibrium thermochemical diagrams were constructed for the metal-oxygen system corresponding to each constituent metal in both the coating and base alloy. The major vaporizing species are expected to be the gaseous oxides of chromium, silicon, iron and tungsten. Plots of vapor phase composition and maximum vaporization rate versus oxygen pressure were calculated for each coating constituent. The major contribution to weight loss by vaporization at oxygen pressures above 1 torr was shown to be the chromium-containing species.

  16. Rapid epitaxy-free graphene synthesis on silicidated polycrystalline platinum

    NASA Astrophysics Data System (ADS)

    Babenko, Vitaliy; Murdock, Adrian T.; Koós, Antal A.; Britton, Jude; Crossley, Alison; Holdway, Philip; Moffat, Jonathan; Huang, Jian; Alexander-Webber, Jack A.; Nicholas, Robin J.; Grobert, Nicole

    2015-07-01

    Large-area synthesis of high-quality graphene by chemical vapour deposition on metallic substrates requires polishing or substrate grain enlargement followed by a lengthy growth period. Here we demonstrate a novel substrate processing method for facile synthesis of mm-sized, single-crystal graphene by coating polycrystalline platinum foils with a silicon-containing film. The film reacts with platinum on heating, resulting in the formation of a liquid platinum silicide layer that screens the platinum lattice and fills topographic defects. This reduces the dependence on the surface properties of the catalytic substrate, improving the crystallinity, uniformity and size of graphene domains. At elevated temperatures growth rates of more than an order of magnitude higher (120 μm min-1) than typically reported are achieved, allowing savings in costs for consumable materials, energy and time. This generic technique paves the way for using a whole new range of eutectic substrates for the large-area synthesis of 2D materials.

  17. Silicide induced ion beam patterning of Si(001).

    PubMed

    Engler, Martin; Frost, Frank; Müller, Sven; Macko, Sven; Will, Moritz; Feder, René; Spemann, Daniel; Hübner, René; Facsko, Stefan; Michely, Thomas

    2014-03-21

    Low energy ion beam pattern formation on Si with simultaneous co-deposition of Ag, Pd, Pb, Ir, Fe or C impurities was investigated by in situ scanning tunneling microscopy as well as ex situ atomic force microscopy, scanning electron microscopy, transmission electron microscopy and Rutherford backscattering spectrometry. The impurities were supplied by sputter deposition. Additional insight into the mechanism of pattern formation was obtained by more controlled supply through e-beam evaporation. For the situations investigated, the ability of the impurity to react with Si, i.e. to form a silicide, appears to be a necessary, but not a sufficient condition for pattern formation. Comparing the effects of impurities with similar mass and nuclear charge, the collision kinetics is shown to be not of primary importance for pattern formation. To understand the observed phenomena, it is necessary to assume a bi-directional coupling of composition and height fluctuations. This coupling gives rise to a sensitive dependence of the final morphology on the conditions of impurity supply. Because of this history dependence, the final morphology cannot be uniquely characterized by a steady state impurity concentration.

  18. 21 CFR 184.1449 - Manganese citrate.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 3 2012-04-01 2012-04-01 false Manganese citrate. 184.1449 Section 184.1449 Food... Specific Substances Affirmed as GRAS § 184.1449 Manganese citrate. (a) Manganese citrate (Mn3(C6H5O7)2, CAS... manganese carbonate from manganese sulfate and sodium carbonate solutions. The filtered and washed...

  19. 21 CFR 184.1449 - Manganese citrate.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 3 2013-04-01 2013-04-01 false Manganese citrate. 184.1449 Section 184.1449 Food... Specific Substances Affirmed as GRAS § 184.1449 Manganese citrate. (a) Manganese citrate (Mn3(C6H5O7)2, CAS... manganese carbonate from manganese sulfate and sodium carbonate solutions. The filtered and washed...

  20. 21 CFR 184.1449 - Manganese citrate.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 3 2010-04-01 2009-04-01 true Manganese citrate. 184.1449 Section 184.1449 Food... Specific Substances Affirmed as GRAS § 184.1449 Manganese citrate. (a) Manganese citrate (Mn3(C6H5O7)2, CAS... manganese carbonate from manganese sulfate and sodium carbonate solutions. The filtered and...

  1. Thermal stability of copper silicide passivation layers in copper-based multilevel interconnects

    NASA Astrophysics Data System (ADS)

    Hymes, S.; Kumar, K. S.; Murarka, S. P.; Ding, P. J.; Wang, W.; Lanford, W. A.

    1998-04-01

    Copper thin films were exposed to a dilute silane mixture at temperatures in the range of 190-363 °C. The resulting silicide surface layers were characterized by four-point probe, Rutherford backscattering spectrometry, and x-ray diffraction. A definitive stability regime is observed in which progressively higher copper content phases exist with increasing temperature. Cu3Si, formed in silane, on annealing converts to Cu5Si and eventually to no silicide layer by a silicon diffusion reaction that in an inert ambient drives silicon into underlying copper to form a solid solution. In oxidizing ambients, a similar phenomenon occurs but now silicon also diffuses to surfaces where it oxidizes to form a self-passivating SiO2 layer on surface. These results have important implications governing integration of copper silicide as a passivation layer and silicon hydride based dielectric deposition in copper-based multilevel interconnect in ultralarge scale integration.

  2. Tuning magnetic response of epitaxial iron-silicide nanoislands by controlled self-assembled growth

    NASA Astrophysics Data System (ADS)

    Goldfarb, I.; Camus, Y.; Dascalu, M.; Cesura, F.; Chalasani, R.; Kohn, A.

    2017-07-01

    We investigated the dependence of the magnetic response from epitaxial Si-rich iron-silicide nanostructures on their geometry. By varying substrate orientation and deposition parameters, we altered the growth kinetics and the lattice matching conditions at the silicide/silicon interface. These affected the silicide nanoisland crystal structure, size, shape, and proximity due to spatial ordering and, consequently, their magnetic response in terms of shape and opening of the respective hysteresis loops. In particular, we demonstrated correlation between magnetic anisotropy, expressed as the hysteresis coercive field, and the nanoisland spatial length-to-width aspect ratio. This correlation is explained by the contribution of undercoordinated island edge atoms to the overall measured magnetic behavior of the nanoisland arrays. Further, the island self-ordering along periodic surface steps adds dipolar interactions between the otherwise superparamagnetic nanoislands, consequently resulting in a magnetic response resembling that of a superspin glass.

  3. Self-organized patterns along sidewalls of iron silicide nanowires on Si(110) and their origin

    SciTech Connect

    Das, Debolina; Mahato, J. C.; Bisi, Bhaskar; Dev, B. N.; Satpati, B.

    2014-11-10

    Iron silicide (cubic FeSi{sub 2}) nanowires have been grown on Si(110) by reactive deposition epitaxy and investigated by scanning tunneling microscopy and scanning/transmission electron microscopy. On an otherwise uniform nanowire, a semi-periodic pattern along the edges of FeSi{sub 2} nanowires has been discovered. The origin of such growth patterns has been traced to initial growth of silicide nanodots with a pyramidal Si base at the chevron-like atomic arrangement of a clean reconstructed Si(110) surface. The pyramidal base evolves into a comb-like structure along the edges of the nanowires. This causes the semi-periodic structure of the iron silicide nanowires along their edges.

  4. Progress in alkaline peroxide dissolution of low-enriched uranium metal and silicide targets

    SciTech Connect

    Chen, L.; Dong, D.; Buchholz, B.A.; Vandegrift, G.F.; Wu, D.

    1996-12-31

    This paper reports recent progress on two alkaline peroxide dissolution processes: the dissolution of low-enriched uranium metal and silicide (U{sub 3}Si{sub 2}) targets. These processes are being developed to substitute low-enriched for high-enriched uranium in targets used for production of fission-product {sup 99}Mo. Issues that are addressed include (1) dissolution kinetics of silicide targets, (2) {sup 99}Mo lost during aluminum dissolution, (3) modeling of hydrogen peroxide consumption, (4) optimization of the uranium foil dissolution process, and (5) selection of uranium foil barrier materials. Future work associated with these two processes is also briefly discussed.

  5. An inert marker study for palladium silicide formation - Si moves in polycrystalline Pd2Si

    NASA Technical Reports Server (NTRS)

    Ho, K. T.; Lien, C.-D.; Shreter, U.; Nicolet, M.-A.

    1985-01-01

    A novel use of Ti marker is introduced to investigate the moving species during Pd2Si formation on 111 and 100 line-type Si substrates. Silicide formed from amorphous Si is also studied using a W marker. Although these markers are observed to alter the silicide formation in the initial stage, the moving species can be identified once a normal growth rate is resumed. It is found that Si is the dominant moving species for all three types of Si crystallinity. However, Pd will participate in mass transport when Si motion becomes obstructed.

  6. Optical anisotropy of quasi-1D rare-earth silicide nanostructures on Si(001)

    NASA Astrophysics Data System (ADS)

    Chandola, S.; Speiser, E.; Esser, N.; Appelfeller, S.; Franz, M.; Dähne, M.

    2017-03-01

    Rare earth metals are known to interact strongly with Si(001) surfaces to form different types of silicide nanostructures. Using STM to structurally characterize Dy and Tb silicide nanostructures on vicinal Si(001), it will be shown that reflectance anisotropy spectroscopy (RAS) can be used as an optical fingerprint technique to clearly distinguish between the formation of a semiconducting two-dimensional wetting layer and the metallic one-dimensional nanowires. Moreover, the distinctive spectral features can be related to structural units of the nanostructures. RAS spectra of Tb and Dy nanostructures are found to show similar features.

  7. Self-organized growth and magnetic properties of epitaxial silicide nanoislands

    NASA Astrophysics Data System (ADS)

    Tripathi, J. K.; Levy, R.; Camus, Y.; Dascalu, M.; Cesura, F.; Chalasani, R.; Kohn, A.; Markovich, G.; Goldfarb, I.

    2017-01-01

    Self-organized transition-metal (Ni and Fe) and rare-earth (Er) silicide nanostructures were grown on Si(1 1 1) and Si(0 0 1) surfaces under low coverage conditions, in a ;solid phase; and ;reactive deposition; epitaxial regimes. Island evolution was continuously monitored in-situ, using real-time scanning tunneling microscopy and surface electron diffraction. After anneal of a Ni/Si(1 1 1) surface at 700 °C, we observed small hemispherical Ni-silicide nanoislands ∼10 nm in diameter decorating surface steps in a self-ordered fashion and pinning them. Fe-silicide nanoislands formed after a 550 °C anneal of a Fe-covered surface, were also self-ordered along the surface step-bunches, however were significantly larger (∼70 × 10 nm) and exhibited well-developed three-dimensional polyhedral shapes. Ni-silicide islands were sparsely distributed, separated by about ∼100 nm from one another, on average, whereas Fe-silicide islands were more densely packed, with only ∼50 nm mean separation distance. In spite of the above differences between both types of island in size, shape, and number density, the self-ordering in both cases was close to ideal, with practically no islands nucleated on terraces. Superconducting quantum interference device magnetometry showed considerable superparamagnetism, in particular in Fe-silicide islands with ∼1.9 μB/Fe atom, indicating stronger ferromagnetic coupling of individual magnetic moments, contrary to Ni-silicide islands with the calculated moments of only ∼ 0.5μB /Ni atom. To elucidate the effects of the island size, shape, and lateral ordering on the measured magnetic response, we have controllably changed the island morphology by varying deposition methods and conditions and even using differently oriented Si substrates. We have also begun experimenting with rare-earth silicide islands. In the forthcoming experiments we intend to compare the magnetic response of these variously built and composed islands and correlate

  8. An inert marker study for palladium silicide formation - Si moves in polycrystalline Pd2Si

    NASA Technical Reports Server (NTRS)

    Ho, K. T.; Lien, C.-D.; Shreter, U.; Nicolet, M.-A.

    1985-01-01

    A novel use of Ti marker is introduced to investigate the moving species during Pd2Si formation on 111 and 100 line-type Si substrates. Silicide formed from amorphous Si is also studied using a W marker. Although these markers are observed to alter the silicide formation in the initial stage, the moving species can be identified once a normal growth rate is resumed. It is found that Si is the dominant moving species for all three types of Si crystallinity. However, Pd will participate in mass transport when Si motion becomes obstructed.

  9. Method for forming metallic silicide films on silicon substrates by ion beam deposition

    DOEpatents

    Zuhr, Raymond A.; Holland, Orin W.

    1990-01-01

    Metallic silicide films are formed on silicon substrates by contacting the substrates with a low-energy ion beam of metal ions while moderately heating the substrate. The heating of the substrate provides for the diffusion of silicon atoms through the film as it is being formed to the surface of the film for interaction with the metal ions as they contact the diffused silicon. The metallic silicide films provided by the present invention are contaminant free, of uniform stoichiometry, large grain size, and exhibit low resistivity values which are of particular usefulness for integrated circuit production.

  10. Crystal Structure of Silicides in a Ti - 0.7 WT.% Si Nanostructured Alloy

    NASA Astrophysics Data System (ADS)

    Ivanov, M. B.; Manokhin, S. S.; Kolobova, A. Yu.

    2017-09-01

    Using warm, lengthwise grooved-roll processing of the Ti - 0.7 wt.% Si alloy, a nanostructured state is formed in it at 873 K with the grain-subgrain elements measuring about 280 nm. The titanium silicides precipitating during the dynamic strain-induced aging of the alloy are investigated by the methods of high-resolution scanning electron microscopy. It is found that the shape of the silicides is close to spherical, they have an FCClattice and an incoherent interface with the matrix.

  11. Manganese in Madison's drinking water.

    PubMed

    Schlenker, Thomas; Hausbeck, John; Sorsa, Kirsti

    2008-12-01

    Public concern over events of manganese-discolored drinking water and the potential for adverse health effects from exposure to excess manganese reached a high level in 2005. In response, Public Health Madison Dane County, together with the Madison Water Utility, conceived and implemented a public health/water utility strategy to quantify the extent of the manganese problem, determine the potential for adverse human health effects, and communicate these findings to the community. This strategy included five basic parts: taking an inventory of wells and their manganese levels, correlating manganese concentration with turbidity, determining the prevalence and distribution of excess manganese in Madison households, reviewing the available scientific literature, and effectively communicating our findings to the community. The year-long public health/water utility strategy successfully resolved the crisis of confidence in the safety of Madison's drinking water.

  12. Disorder in the composite crystal structure of the manganese `disilicide' MnSi1.73 from powder X-ray diffraction data.

    PubMed

    Akselrud, L; Cardoso Gil, R; Wagner-Reetz, M; Grin, Yu

    2015-12-01

    The crystal structure of the higher manganese silicide MnSi1.7 (known in the literature as HMS) is investigated in samples with different compositions obtained by different techniques at temperatures not higher than 1273 K. Powder X-ray diffraction was applied. The crystal structure is described as incommensurate composite. In addition to the ordered model already known in the literature, the partial disorder in the silicon substructure was detected and described introducing an additional atomic site with a different modulation function.

  13. Thermal Analysis of a Uranium Silicide Miniplate Irradiation Experiment

    SciTech Connect

    Donna Post Guillen

    2009-09-01

    This paper outlines the thermal analysis for the irradiation of high density uranium-silicide (U3Si2 dispersed in an aluminum matrix and clad in aluminum) booster fuel for a Boosted Fast Flux Loop designed to provide fast neutron flux test capability in the ATR. The purpose of this experiment (designated as Gas Test Loop-1 [GTL-1]) is two-fold: (1) to assess the adequacy of the U3Si2/Al dispersion fuel and the aluminum alloy 6061 cladding, and (2) to verify stability of the fuel cladding boehmite pre-treatment at nominal power levels in the 430 to 615 W/cm2 (2.63 to 3.76 Btu/s•in2) range. The GTL-1 experiment relies on a difficult balance between achieving a high heat flux, yet keeping fuel centerline temperature below a specified maximum value throughout an entire operating cycle of the reactor. A detailed finite element model was constructed to calculate temperatures and heat flux levels and to reveal which experiment parameters place constraints on reactor operations. Analyses were performed to determine the bounding lobe power level at which the experiment could be safely irradiated, yet still provide meaningful data under nominal operating conditions. Then, simulations were conducted for nominal and bounding lobe power levels under steady-state and transient conditions with the experiment in the reactor. Reactivity changes due to a loss of commercial power with pump coast-down to emergency flow or a standard in-pile tube pump discharge break were evaluated. The time after shutdown for which the experiment can be adequately cooled by natural convection cooling was determined using a system thermal hydraulic model. An analysis was performed to establish the required in-reactor cooling time prior to removal of the experiment from the reactor. The inclusion of machining tolerances in the numerical model has a large effect on heat transfer.

  14. Theoretical investigation of silicide Schottky barrier detector integrated in horizontal metal-insulator-silicon-insulator-metal nanoplasmonic slot waveguide.

    PubMed

    Zhu, Shiyang; Lo, G Q; Kwong, D L

    2011-08-15

    An ultracompact integrated silicide Schottky barrier detector (SBD) is designed and theoretically investigated to electrically detect the surface plasmon polariton (SPP) propagating along horizontal metal-insulator-silicon-insulator-metal nanoplasmonic slot waveguides at the telecommunication wavelength of 1550 nm. An ultrathin silicide layer inserted between the silicon core and the insulator, which can be fabricated precisely using the well-developed self-aligned silicide process, absorbs the SPP power effectively if a suitable silicide is chosen. Moreover, the Schottky barrier height in the silicide-silicon-silicide configuration can be tuned substantially by the external voltage through the Schottky effect owing to the very narrow silicon core. For a TaSi(2) detector with optimized dimensions, numerical simulation predicts responsivity of ~0.07 A/W, speed of ~60 GHz, dark current of ~66 nA at room temperature, and minimum detectable power of ~-29 dBm. The design also suggests that the device's size can be reduced and the overall performances will be further improved if a silicide with smaller permittivity is used.

  15. Impact of laser anneal on NiPt silicide texture and chemical composition

    NASA Astrophysics Data System (ADS)

    Feautrier, C.; Ozcan, A. S.; Lavoie, C.; Valery, A.; Beneyton, R.; Borowiak, C.; Clément, L.; Pofelski, A.; Salem, B.

    2017-06-01

    We have combined synchrotron X-ray pole figure measurements and transmission electron microscopy (TEM) nano-beam diffraction to study the impact of millisecond laser anneal on the texture and microstructure of NiPt silicide thin films. The powerful use of nano-beam diffraction in plan-view geometry allows here for both a mapping of grain orientation and intra-grain measurements even if these crystalline grains become very small. With this unique combination of local and large-scale probes, we find that silicide formation on n and p doped substrates using laser annealing results in smaller grains compared with the films processed using standard rapid thermal annealing. The laser annealed samples also result in grains that are more epitaxially oriented with respect to the Si substrate. For n-type substrate, the film is dominated by (020) and (013) oriented fibers with significant levels of intra-grain bending (transrotation) observed in both types of grains. For p-type substrates, mostly epitaxially aligned grains are detected. TEM coupled with energy-dispersive X-ray analysis was also used to study the elemental distribution in the silicide samples. Here, we confirm that laser anneal leads to a larger accumulation of platinum at the silicide-substrate interface and modifies the distribution of dopants throughout the film.

  16. Electronic properties of Co and Ni silicides: a theoretical approach using extended Huckel method

    NASA Astrophysics Data System (ADS)

    Galvan, D. H.; Posada Amarillas, A.; Samaniego Reyna, J. C.; García-Méndez, M.; Farías, M. H.

    2004-11-01

    Calculations of electronic structure, total and projected density of states (DOS), crystal orbital overlap population (COOP), and average net charge, and also Mulliken population analysis, were performed to study electronic properties of Co and Ni silicides. Analysis of the energy bands depicts metallic behavior for both silicides.The projected DOS yields an indication that hybridization occurs for Co and Ni silicides. The hybridized band in CoSi2 is composed of Co d and p orbitals and Si p and s orbitals, while in NiSi2 the hybridized band is formed by Ni d and p orbitals with Si p orbitals. The fact that the Fermi energy crosses a small part of the DOS, as is the case of CoSi2, yields an indication of the different electronic properties of CoSi2 when compared to NiSi2. The hybridization is stronger in CoSi2 than in NiSi2. Mulliken population analysis provides an indication that a smaller charge distribution exists in NiSi2 when compared to CoSi2. This difference in charge distribution accounts for the different electronic behavior, in agreement with the DOS analysis. Moreover, COOP analysis provides an indication of the existence of covalent bonding between M and Si (M = Ni, Co), this being stronger in Co than in Ni silicides. Furthermore, the average net charge in both compounds yields an indication that there is a charge transfer from M towards Si.

  17. Magneto-Transport Studies of Molecular Beam Epitaxial Grown Osmium Silicides

    NASA Astrophysics Data System (ADS)

    Cottier, Ryan; Zhao, Wei; Amir, Fatima; Hossain, Khalid; Anibou, Noureddine; Donner, Wolfgang; Golding, Terry

    2006-03-01

    Semiconducting transition metal silicides present a possible solution to on-chip integration of optical and electronic Si-based circuitry. Two phases of osmium silicide (OsSi2 and Os2Si3) are predicted to have promising optical characteristics but require additional development to fully determine their feasibility for high-quality devices. This study has been motivated by reports that OsSi2 has a bandgap between 1.4--1.8eV [1, 2] and Os2Si3 may have a direct bandgap of 0.95 eV [3] or 2.3 eV [1]. In this paper we will present temperature dependent (20 < T < 300 K) magneto Hall measurements of molecular beam epitaxial grown osmium silicide thin films. Os and Si were coevaporated onto Si(100) substrates at varying growth rates and temperatures. XRD was performed in order to identify the silicide phases present. We will discuss our results in relation to the known phase diagrams and our growth parameters. [1] L. Schellenberg et al., J. Less-Common Met. 144, 341 (1988). [2] K. Mason and G. Müller-Vogt, J. Appl. Phys. 63, 34 (1983). [3] A. B. Filonov et al., Phys. Rev. B 60(24), 16494 (1999).

  18. Rocket-propellant burn tests of silicide-coated niobium and tantalum

    SciTech Connect

    Curtis, P.G.; Krikorian, O.H.; Helm, F.H.

    1988-04-20

    Coatings designed to protect refractory metals in fire situations were tested on niobium and tantalum in a furnace and in a rocket-fuel flame. The best performance was obtained from Cr-Si-type silicide coatings applied by the pack-cementation process. The main mode of failure of the coated parts was corrosion by molten stainless steel rather than oxidation.

  19. Influence of Rapid Thermal Ramp Rate on Phase Transformation of Titanium Silicides

    SciTech Connect

    Bailey, Glenn; Hu, Yao, Zhi; Smith, Paul Martin; Tay, Sing Pin; Thakur, Randhir; Yang, Jiting

    1999-05-03

    ULSI technology requires low resistance, stable silicides formed on small geometry lines. Titanium disilicide (TiSiz), which is the most widely used silicide for ULSI applications, exists in two crystallographic phases: the high resistance, metastable C49 phase and the low resistance, stable C54 phase. The major issue with TiSiz is the increasing thermal budget required to transform the C49 phase into the low resistance C54 phase as linewiths decrease below 0.25 pm. Annealing above 900"C to obtain this transformation often results in thermal degradation, so it is desirable to reduce the transformation temperature. The transformation temperature has been shown to be a fi.mction of many factors including microstructure, grain size, and impurities. In this paper we report an investig+ion of rapid thermal silicidation of titanium films (250, 400, and 600 A) on single crystalline silicon at temperatures from 300 to 1000"C. The ramp rates for these experiments are 5, 30, 70, and 200oC/s. The transformation temperature decreases as the ramp rate increases and as the initial film thickness increases. Scanning electron microscopy (SEM) is used to analyze the resultant film microstructure. The ramp rate influence on Ti silicidation is also investigated on polycrystalline Si lines with widths ranging from 0.27 to 3.0 pm.

  20. Silicide Coating Fabricated by HAPC/SAPS Combination to Protect Niobium Alloy from Oxidation.

    PubMed

    Sun, Jia; Fu, Qian-Gang; Guo, Li-Ping; Wang, Lu

    2016-06-22

    A combined silicide coating, including inner NbSi2 layer and outer MoSi2 layer, was fabricated through a two-step method. The NbSi2 was deposited on niobium alloy by halide activated pack cementation (HAPC) in the first step. Then, supersonic atmospheric plasma spray (SAPS) was applied to obtain the outer MoSi2 layer, forming a combined silicide coating. Results show that the combined coating possessed a compact structure. The phase constitution of the combined coating prepared by HAPC and SAPS was NbSi2 and MoSi2, respectively. The adhesion strength of the combined coating increased nearly two times than that for single sprayed coating, attributing to the rougher surface of the HAPC-bond layer whose roughness increased about three times than that of the grit-blast substrate. After exposure at 1200 °C in air, the mass increasing rate for single HAPC-silicide coating was 3.5 mg/cm(2) because of the pest oxidation of niobium alloy, whereas the combined coating displayed better oxidation resistance with a mass gain of only 1.2 mg/cm(2). Even more, the combined coating could significantly improve the antioxidation ability of niobium based alloy at 1500 °C. The good oxidation resistance of the combined silicide coating was attributed to the integrity of the combined coating and the continuous SiO2 protective scale provided by the oxidation of MoSi2.

  1. Properties of SiO2 grown on Ti, Co, Ni, Pd, and Pt silicides

    NASA Astrophysics Data System (ADS)

    Bartur, M.; Nicolet, M.-A.

    1984-01-01

    Successful utilization of silicides for VLSI applcations depends strongly on the formation of electrically insulating oxide on top of the silicide (1) . It is found that almost all silicides on a Si substrate can be oxidized to form an SiO2 layer on their surface. In this paper, we present some of the properties of such SiO2 layers formed on TiSi2, CoSi2, NiSi2, Pd2Si, and PtSi on a substrate following dry and wet oxidation. Electrical parameters that were investigated are the dielectric constant, dielectric strength (breakdown field), and pinhole density. The dielectric constant was found to be 3.49 ± 0.24, which is similar to the values reported for SiO2 grown on Si. The dielectric strength of the oxide layers depends on the polarity of the applied voltage, as is the case for oxide grown on poly-Si. Pinhole density in this oxide was also estimated and is less than 40 per cm2. The oxide density and stoichiometry were evaluated using Rutherford Backscattering Spectrometry (RBS) and DEKTAK, and compared to SiO2 grown on . The conclusion we have reached is that oxides grown on almost all the silicides investigated (except PdSi), hold promise for integrated circuit application. The main problem is the suicide roughness, induced by the thermal oxidation, that reduces the dielectric breakdown field.

  2. Manganese Research Health Project (MHRP)

    DTIC Science & Technology

    2009-02-01

    disease and dysfunction; • Investigation of the physiological and biochemical mechanisms (including toxicokinetic considerations); • Investigation of...the physiological mechanisms that govern manganese accumulation within the brain, with special emphasis on the role of olfactory transport of the...dysfunction. Section 3 - MECHANISMS: Papers on the physiological , biochemical and cellular mechanisms underlying the toxic effects of manganese

  3. In situ real-time studies of nickel silicide phase formation

    NASA Astrophysics Data System (ADS)

    Tinani, Manisha

    2000-10-01

    Metal silicides have attracted considerable attention in recent years as low resistivity metal contact and interconnect materials in microelectronics. Historically, polycrystalline silicon has been used as the gate contact material. However, as device size decreases, the higher resistance of polycrystalline silicon can degrade device performance. Metal silicides provide low metal like resistivities and high temperature stability. Ideal silicides for practical applications need to have stable phases, low processing temperatures and mechanical compatibility with silicon, in order to reduce defects and roughness at the silicon-silicide interface. NiSi, one of the nickel silicide phases, fulfills all these criteria. It has a resistivity of 14muO-cm, and a large processing temperature window (350--750°C). NiSi actually surpasses other commonly used silicides such as COSi2 and TiSi2 1 in these properties, while avoiding problems generally faced with these silicides2. Prior to the use of NiSi, its formation mechanism must be understood. The objective of this research is to develop analytical procedures to monitor phase transformations, in our case NiSi, in real-time, using non-destructive techniques. To this end, we studied the formation of NiSi films on Si using Rutherford Backscattering spectrometry, atomic force microscopy, X-ray photoelectron spectroscopy, and real-time single wavelength and spectroscopic ellipsometry. Several nickel silicide phases (Ni2Si, NiSi, NiSi2), with different properties, form in various temperature ranges below 1000°C. Three phases, Ni2Si, NiSi, NiSi2, were identified in this temperature range, and their optical databases in the 2--4 eV range were established. We demonstrated that we can identify the phases and the extent of phase formation from optical data obtained via spectroscopic ellipsometry in real-time, and modeled the data using the optical databases established. We have also observed the onset of agglomeration of the silicide for

  4. Thermal Stability Study from Room Temperature to 1273 K (1000 °C) in Magnesium Silicide

    NASA Astrophysics Data System (ADS)

    Stefanaki, Eleni-Chrysanthi; Hatzikraniotis, Euripides; Vourlias, George; Chrissafis, Konstantinos; Kitis, George; Paraskevopoulos, Konstantinos M.; Polymeris, George S.

    2016-10-01

    Doped magnesium silicide has been identified as a promising and environmentally friendly advanced thermoelectric material in the temperature range between 500 K and 800 K (227 °C and 527 °C). Besides the plethora of magnesium silicide thermoelectric advantages, it is well known for its high sensitivity to oxidation. Oxidation is one of the primary instability mechanisms of degradation of high-temperature Mg2Si thermoelectric devices, as in the presence of O2, Mg2Si decomposes to form MgO and Si. In this work, commercial magnesium silicide in bulk form was used for thermal stability study from room temperature to 1273 K (1000 °C). Various techniques such as DTA-TG, PXRD, and FTIR have been applied. Moreover, the application of thermoluminescence (TL) as an effective and alternative probe for the study of oxidation and decomposition has been exploited. The latter provides qualitative but very helpful hints toward oxidation studies. The low-detection threshold of thermoluminescence, in conjunction with the chemical composition of the oxidation byproducts, consisting of MgO, Mg2SiO4, and SiO2, constitute two powerful motivations for further investigating its viable use as proxy for instability/decomposition studies of magnesium silicide. The partial oxidation reaction has been adopted due to the experimental fact that magnesium silicide is monitored throughout the heating temperature range of the present study. Finally, the role of silicon dioxide to the decomposition procedure, being in amorphous state and gradually crystallizing, has been highlighted for the first time in the literature. Mg2Si oxidation takes place in two steps, including a mild oxidation process with temperature threshold of 573 K (300 °C) and an abrupt one after 773 K (500 °C). Implications on the optimum operational temperature range for practical thermoelectric (TE) applications have also been briefly discussed.

  5. Further thermodynamic assessment for synthesizing transition metal silicides by the combustion synthesis process

    SciTech Connect

    Bhaduri, S.B.; Qian, Z.B.; Radhakrishnan, R.

    1994-01-15

    It is now recognized that the silicide based materials can perform well under high temperature oxidizing conditions in the range of 1,200--1,600 C. The range of potential uses described in the literature for aerospace, automobile to power generation equipment is extremely broad. In fact, the silicides offer an alternative class of materials to the engineering ceramics such as SiC and Si{sub 3}N{sub 4}. In their previous paper, the authors argued that combustion synthesis (CS) may prove to be a viable method for producing transition metal silicides; it drew attention to the advantages of the process in comparison to conventional processes. This paper will expand their previous thermodynamic assessment in two ways: (1) encompass a larger number of silicides for which thermodynamic data are readily available and (2) perform thermodynamic calculations in order to obtain a correlation between thermodynamic quantities that characterize the materials in question. Previously, the authors stopped short of these calculations by obtaining experimental data from Russian literature. In the present case, experimental data are not available for many of the silicides. Consequently, thermodynamic calculations, for the first time, predict the possibility of synthesizing some of the materials in question by the CS process. Being predictions, the calculated values may be larger than experimental values (if and when available). Nonetheless, these predictions may prove to be important because thermodynamics dictates whether a reaction will propagate or quench itself. These calculations can be used as a classification tool in distinguishing between the energetic systems and the sluggish ones.

  6. Microstructure and mechanical properties of metal/oxide and metal/silicide interfaces

    SciTech Connect

    Shaw, L.; Miracle, D.; Abbaschian, R.

    1995-12-01

    Fracture energies of Al{sub 2}O{sub 3}/Nb interfaces and MoSi{sub 2}/Nb interfaces with and without Al{sub 2}O{sub 3} coating were measured using sandwich-type chevron-notched specimens. The relations between the mechanical properties, microstructures, types of bonds at the interface and processing routes were explored. The fracture energy of the Al{sub 2}O{sub 3}/Nb interface was determined to be 9 J/m{sup 2} and changed to 16 J/m{sup 2} when Nb was pre-oxidized before the formation of the Al{sub 2}O{sub 3}/Nb interface. The fracture energy of the MoSi{sub 2}/Nb interface could not be determined directly because of the formation of the interfacial compounds. However, the fracture energy at the MoSi{sub 2}/Nb interfacial region was found to depend on the interfacial bond strength, roughness of interfaces and microstructure of interfacial compounds. The interfacial fracture energies of Al{sub 2}O{sub 3} with silicides, MoSi{sub 2}, Nb{sub 5}Si{sub 3}, or (Nb, Mo)Si{sub 2} were estimated to be about 16 J/m{sup 2}, while the interfacial fracture energies between two silicides or between Nb and a silicide were larger than 34 J/m{sup 2}. The measured fracture energies between two silicides or between Nb and a silicide were larger than 34 J/m{sup 2}. The measured fracture energies of the various interfaces are discussed in terms of the interfacial microstructures and types of bonds at the interfaces.

  7. Microtopography of manganese crusts

    NASA Astrophysics Data System (ADS)

    Morgan, Charles L.

    Quantitative examination of the seafloor surface roughness will be necessary for any design of equipment intended for use in collecting surface deposits such as cobalt-rich manganese crusts or nodules. Furthermore, it is an essential prerequisite to the confident interpretation of returns from high frequency side-scan and other acoustic systems. The objectives of the project were to develop the capability at the University of Hawaii of generating high resolution (less than 1 cm horizontal and vertical) topographic models of the seafloor from 35 mm stereo photographs; to produce such models from existing photographs of cobalt-rich manganese crust deposits; and to optimize the configuration of the existing Hawaii Undersea Research Laboratory (HURL) camera system for stereo photograph collection and correlation of acoustic data with the photographic ground-truth. These tasks were accomplished and have also led to the development of a follow-on project (MMTC/OBD Project 1512) dedicated to the simultaneous acquisition of both optical and side-scan acoustic data for future accurate determination of seabed microtopography.

  8. 21 CFR 184.1452 - Manganese gluconate.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 3 2013-04-01 2013-04-01 false Manganese gluconate. 184.1452 Section 184.1452... Listing of Specific Substances Affirmed as GRAS § 184.1452 Manganese gluconate. (a) Manganese gluconate... manganese carbonate with gluconic acid in aqueous medium and then crystallizing the product. (b) The...

  9. 21 CFR 184.1452 - Manganese gluconate.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 3 2012-04-01 2012-04-01 false Manganese gluconate. 184.1452 Section 184.1452... Listing of Specific Substances Affirmed as GRAS § 184.1452 Manganese gluconate. (a) Manganese gluconate... manganese carbonate with gluconic acid in aqueous medium and then crystallizing the product. (b) The...

  10. 21 CFR 184.1461 - Manganese sulfate.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 3 2013-04-01 2013-04-01 false Manganese sulfate. 184.1461 Section 184.1461 Food... Specific Substances Affirmed as GRAS § 184.1461 Manganese sulfate. (a) Manganese sulfate (MnSO4·H2O, CAS... manganese compounds with sulfuric acid. It is also obtained as a byproduct in the manufacture of...

  11. 21 CFR 184.1461 - Manganese sulfate.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 3 2012-04-01 2012-04-01 false Manganese sulfate. 184.1461 Section 184.1461 Food... Specific Substances Affirmed as GRAS § 184.1461 Manganese sulfate. (a) Manganese sulfate (MnSO4·H2O, CAS... manganese compounds with sulfuric acid. It is also obtained as a byproduct in the manufacture of...

  12. 21 CFR 184.1446 - Manganese chloride.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 3 2012-04-01 2012-04-01 false Manganese chloride. 184.1446 Section 184.1446 Food... Specific Substances Affirmed as GRAS § 184.1446 Manganese chloride. (a) Manganese chloride (MnCl2, CAS Reg. No. 7773-01-5) is a pink, translucent, crystalline product. It is also known as manganese dichloride...

  13. 21 CFR 184.1446 - Manganese chloride.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 3 2013-04-01 2013-04-01 false Manganese chloride. 184.1446 Section 184.1446 Food... Specific Substances Affirmed as GRAS § 184.1446 Manganese chloride. (a) Manganese chloride (MnCl2, CAS Reg. No. 7773-01-5) is a pink, translucent, crystalline product. It is also known as manganese dichloride...

  14. 21 CFR 184.1452 - Manganese gluconate.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 3 2010-04-01 2009-04-01 true Manganese gluconate. 184.1452 Section 184.1452 Food... Specific Substances Affirmed as GRAS § 184.1452 Manganese gluconate. (a) Manganese gluconate (C12H22MnO14... manganese carbonate with gluconic acid in aqueous medium and then crystallizing the product. (b)...

  15. Fused slurry silicide coatings for columbium alloy reentry heat shields. Volume 2: Experimental and coating process details

    NASA Technical Reports Server (NTRS)

    Fitzgerald, B.

    1973-01-01

    The experimental and coating process details are presented. The process specifications which were developed for the formulation and application of the R-512E fused slurry silicide coating using either an acrylic or nitrocellulose base slurry system is also discussed.

  16. Impact of silicide layer on single photon avalanche diodes in a 130 nm CMOS process

    NASA Astrophysics Data System (ADS)

    Cheng, Zeng; Palubiak, Darek; Zheng, Xiaoqing; Deen, M. Jamal; Peng, Hao

    2016-09-01

    Single photon avalanche diode (SPAD) is an attractive solid-state optical detector that offers ultra-high photon sensitivity (down to the single photon level), high speed (sub-nanosecond dead time) and good timing performance (less than 100 ps). In this work, the impact of the silicide layer on SPAD’s characteristics, including the breakdown voltage, dark count rate (DCR), after-pulsing probability and photon detection efficiency (PDE) is investigated. For this purpose, two sets of SPAD structures in a standard 130 nm complementary metal oxide semiconductor (CMOS) process are designed, fabricated, measured and compared. A factor of 4.5 (minimum) in DCR reduction, and 5 in PDE improvements are observed when the silicide layer is removed from the SPAD structure. However, the after-pulsing probability of the SPAD without silicide layer is two times higher than its counterpart with silicide. The reasons for these changes will be discussed.

  17. 21 CFR 184.1449 - Manganese citrate.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 3 2014-04-01 2014-04-01 false Manganese citrate. 184.1449 Section 184.1449 Food... GRAS § 184.1449 Manganese citrate. (a) Manganese citrate (Mn3(C6H5O7)2, CAS Reg. No. 10024-66-5) is a pale orange or pinkish white powder. It is obtained by precipitating manganese carbonate from manganese...

  18. Mineral of the month: manganese

    USGS Publications Warehouse

    Corathers, Lisa A.

    2005-01-01

    Manganese is one of the most important ferrous metals and one of the few for which the United States is totally dependent on imports. It is a black, brittle element predominantly used in metallurgical applications as an alloying addition, particularly in steel and cast iron production, which together provide the largest market for manganese (about 83 percent). It is also used as an alloy with nonferrous metals such as aluminum and copper. Nonmetallurgical applications of manganese include battery cathodes, soft ferrite magnets used in electronics, micronutrients found in fertilizers and animal feed, water treatment chemicals, and a colorant for bricks and ceramics.

  19. Manganese waste water treatment by fungi derived from manganese slag.

    PubMed

    Ou-Yang, Yu-Zhu; Cao, Jian-Bing; Li, Xiao-Ming; Zheng, Wei; Wang, Dong-Bo; Zhang, Yi

    2010-01-01

    The aim of this study was to isolate a mould from the surface of manganese slag which had strong resistance and high adsorption of Mn(2 + ), and to determine the effects of initial Mn(2 + ) concentration, incubation temperature, rotation speed and inoculation amount on adsorption of Mn(2 + ) from manganese waste water solution. The result showed that a mould (A5) which was isolated from manganese slag had the adsorption rate of Mn(2 + ) to 97.5% at the initial pH value 6, inoculation amount 2%, rotation speed 150 r/min, a concentration of Mn(2 + ) 500 mg/L, and a temperature of 28 degrees C cultivated for 50 h. As there is no research on adsorption of Mn(2 + ) from manganese waste water by fungi before, this research showed a theoretical guidance on this field.

  20. Growth and characterization of self-assembled epitaxial transition-metal silicide nanowires

    NASA Astrophysics Data System (ADS)

    He, Zhian

    This dissertation involves the growth and microstructure characterization of self-assembled epitaxial silicide nanowires (NWs). It has been discovered that many metal/Si systems (Ti-Si(111), Dy/Si(110), Dy/Si(111), Co/Si(001), Co/Si(110), Co/Si(111), Ni/Si(111), Ni/Si(110), etc.) show self-assembled epitaxial silicide nanowire formation behavior during the ultra-high vacuum (UHV) reactive epitaxy process, in addition to the previously known rare-earth/Si(001) system. Most nanowires have dimensions of approximately 20 nm wide, 5 nm high and 1 um long. The dimensions and densities of the nanowires change considerably with growth temperature, deposition rate, and coverage. Transmission electron microscopy (TEM) reveals that most of these silicide nanowires are defect-free single crystals and form atomically flat interfaces with the Si substrate. Most silicide nanowires (COSi2/Si, NiSi2/Si(110), TiSi 2/Si(111) DYSi2/Si(110), etc.) grow into the Si substrate along inclined Si{111}, forming a V-shaped groove in the Si substrate. In several silicide nanowire systems (DySi2/Si(111), DySi2/S1(001), NiSi2/Si(111), etc.), however, the nanowires grow on top of the substrate. For these systems, the nanowires can be aligned to a single orientation using a stepped substrate. The growth mode (in-growth versus growth on top of the substrate surface) plays a significant role in the formation of nanowires and islands. Growth on the substrate usually produces islands that share the symmetry of the substrate in shape or in structure, whereas in-growth islands show less dependency on the surface symmetry (i.e. they adopt an asymmetric island shape and are less sensitive to surface steps). It has been proven that the silicides do not need to satisfy the requirement as specified in the "classic model" to form nanowires. A new nanowire formation mechanism is proposed in this work. This mechanism requires coherent growth of overlayer islands into the substrate along inclined close

  1. Tellurium content of marine manganese oxides and other manganese oxides

    USGS Publications Warehouse

    Lakin, H.W.; Thompson, C.E.; Davidson, D.F.

    1963-01-01

    Tellurium in amounts ranging from 5 to 125 parts per million was present in all of 12 samples of manganese oxide nodules from the floor of the Pacific and Indian oceans. These samples represent the first recognized points of high tellurium concentration in a sedimentary cycle. The analyses may lend support to the theory that the minor-element content of seafloor manganese nodules is derived from volcanic emanations.

  2. Improved Manganese Phosphate Coatings

    DTIC Science & Technology

    1975-04-01

    Conversion coatings 3 . Phosphating bath 20 AGrjC onln odd*. ta It .. c..soMV midP 1J.,alft. by block noc.mb) Work was conducted to determine the mechanism by...34 TABULAR DATA Table I Analyses of Solution and Coating for Phosphating Baths 4 of Di-ferlng Compositions 11 Atomic Absorption...manganese and iron phosphate coating: k * a. Mn(H 2PO4) 2 Nn-P0 4 + H3PO0 k2 k) b. 3MnHPO4 - Mn3 (P04) 2 + H3i’O4 k4 k5 c. Fe(H 2PO4) 2 -01 FeHPO4

  3. Evaluation of Manganese Phosphate Coatings.

    DTIC Science & Technology

    1984-02-01

    84003 _____________ 4 . TTLE and -bitle)5. TYPE OF REPORT & PERIOD COVERED EVALUATION OF MANGANESE PHOSPHATE COATINGS Final 6. PERFORMING ORG. REPORT...rosion resistance of the Endurion phosphate was significantly superior to the 4 . basic manganese phosphate . Endurion phosphate with a Supplementary...OF CONTENTS Page STATEMENT OF THE PROBLEM 1 BACKGROUND 1 APPROACH TO THE PROBLEM 3 RESULTS 4 CONCLUSIONS 7 TABLES I. Falex Wear Life Test Procedure 8

  4. Neutron irradiated uranium silicides studied by neutron diffraction and Rietveld analysis

    SciTech Connect

    Birtcher, R.C.; Mueller, M.H.; Richardson, J.W. Jr.

    1990-11-01

    The irradiation behavior of high-density uranium silicides has been a matter of interest to the nuclear industry for use in high power or low enrichment applications. Transmission electron microscopy studies have found that heavy ion bombardment renders U{sub 3}Si and U{sub 3}Si{sub 2} amorphous at temperatures below about 250 C and that U{sub 3}Si becomes mechanically unstable suffering rapid growth by plastic flow. In this present work, crystallographic changes preceding amorphization by fission fragment damage have been studied by high-resolution neutron diffraction as a function of damage produced by uranium fission at room temperature. Initially, both silicides had tetragonal crystal structures. Crystallographic and amorphous phases were studied simultaneously by combining conventional Rietveld refinement of the crystallographic phases with Fourier-filtering analysis of the non-crystalline scattering component. 13 refs., 5 figs.

  5. Remarkable rare-earth metal silicide oxides with planar Si6 rings.

    PubMed

    Wang, Limin; Tang, Zhongjia; Lorenz, Bernd; Guloy, Arnold M

    2008-08-27

    New rare-earth silicide oxides, La10Si8O3 (1) and Ce10Si8O3 (2), were synthesized through high-temperature reactions of the pure elements under controlled oxygen atmosphere conditions. The remarkable silicides crystallize in a unique crystal structure (space group P6/mmm; a = 10.975(3) A (La) and 10.844(1) A (Ce); c = 4.680(1) A (La) and 4.561(1) A (Ce)) that features a 3-D framework of corner-shared O-centered (La/Ce)6 octahedra, reminiscent of hexagonal tungsten bronzes, with planar Si6 rings enclosed within its hexagonal channels. Band structure calculations indicate the compounds are metallic, with optimized La-Si bonds, and a benzene-like [Si6]6- anion. Compound 1 exhibits temperature independent paramagnetism. Compound 2 exhibits Curie-Weiss paramagnetism, and an antiferromagnetic ordering below 7 K.

  6. On the diffraction pattern of bundled rare-earth silicide Nanowires on Si(001).

    PubMed

    Timmer, Frederic; Bahlmann, Jascha; Wollschlaeger, Joachim

    2017-08-24

    Motivated by the complex diffraction pattern observed for bundled rare-earth silicide nanowires on the Si(001) surface we investigate the influence of the width and the spacing distribution of the nanowires on the diffraction pattern. The diffraction pattern of the bundled rare-earth silicide nanowires is analyzed by the binary surface technique applying a kinematic approach to diffraction. Assuming a categorical distribution for the (individual) nanowire size and a Poisson distribution for the size of the spacing between adjacent nanowire-bundles we are able to determine the parameters of these distributions and derive an expression for the distribution of the nanowire-bundle size. Additionally, the comparison of our simulations to the experimental diffraction pattern reveal that a (1 × 1)-periodicity on top of the nanowires has to be assumed for a good match. © 2017 IOP Publishing Ltd.

  7. Effect of Saturation Pressure Difference on Metal–Silicide Nanopowder Formation in Thermal Plasma Fabrication

    PubMed Central

    Shigeta, Masaya; Watanabe, Takayuki

    2016-01-01

    A computational investigation using a unique model and a solution algorithm was conducted, changing only the saturation pressure of one material artificially during nanopowder formation in thermal plasma fabrication, to highlight the effects of the saturation pressure difference between a metal and silicon. The model can not only express any profile of particle size–composition distribution for a metal–silicide nanopowder even with widely ranging sizes from sub-nanometers to a few hundred nanometers, but it can also simulate the entire growth process involving binary homogeneous nucleation, binary heterogeneous co-condensation, and coagulation among nanoparticles with different compositions. Greater differences in saturation pressures cause a greater time lag for co-condensation of two material vapors during the collective growth of the metal–silicide nanopowder. The greater time lag for co-condensation results in a wider range of composition of the mature nanopowder.

  8. Development of fused slurry silicide coatings for tantalum reentry heat shields

    NASA Technical Reports Server (NTRS)

    Warnock, R. V.; Stetson, A. R.

    1972-01-01

    A fused slurry silicide coating was developed to provide atmospheric reentry protection for the 90Ta-lOW alloy. Overlaying the silicide with a highly refractory glass greatly improved total lifetime and reliability of the coating system. Low pressure, slow cycle lifetimes in excess of 100 cycles were consistently recorded for 1700 K - 13 and 1300 N/sq m test conditions. A minimum of 25 cycles was obtained for 1810 K - 1300 N/sq m conditions. About 50 simulated reentry cycles (variable temperature, pressure, and stress) were endured by coated 1-inch miniature heat shield panels when exposed to a maximum of 1700 K and either internal or external pressure conditions.

  9. Study of optical and luminescence properties of silicon — semiconducting silicide — silicon multilayer nanostructures

    NASA Astrophysics Data System (ADS)

    Galkin, N. G.; Galkin, K. N.; Dotsenko, , S. A.; Goroshko, D. L.; Shevlyagin, A. V.; Chusovitin, E. A.; Chernev, I. M.

    2017-01-01

    By method of in situ differential spectroscopy it was established that at the formation of monolayer Fe, Cr, Ca, Mg silicide and Mg stannide islands on the atomically clean silicon surface an appearance of loss peaks characteristic for these materials in the energy range of 1.1-2.6 eV is observed. An optimization of growth processes permit to grow monolithic double nanoheterostructures (DNHS) with embedded Fe, Cr and Ca nanocrystals, and also polycrystalline DNHS with NC of Mg silicide and Mg stannide and Ca disilicide. By methods of optical spectroscopy and Raman spectroscopy it was shown that embedded NC form intensive peaks in the reflectance spectra at energies up to 2.5 eV and Raman peaks. In DNS with β-FeSi2 NC a photoluminescence and electroluminescence at room temperature were firstly observed.

  10. Synthesis of silicon nanotubes with cobalt silicide ends using anodized aluminum oxide template

    NASA Astrophysics Data System (ADS)

    Zhang, Zhang; Liu, Lifeng; Shimizu, Tomohiro; Senz, Stephan; Gösele, Ulrich

    2010-02-01

    Silicon nanotubes (SiNTs) are compatible with Si-based semiconductor technology. In particular, the small diameters and controllable structure of such nanotubes are remaining challenges. Here we describe a method to fabricate SiNTs intrinsically connected with cobalt silicide ends based on highly ordered anodic aluminum oxide (AAO) templates. Size and growth direction of the SiNTs can be well controlled via the templates. The growth of SiNTs is catalyzed by the Co nanoparticles reduced on the pore walls of the AAO after annealing, with a controllable thickness at a given growth temperature and time. Simultaneously, cobalt silicide forms on the bottom side of the SiNTs.

  11. Cobalt silicide formation caused by arsenic ion beam mixing and rapid thermal annealing

    NASA Astrophysics Data System (ADS)

    Ye, Min; Burte, Edmund; Tsien, Pei-Hsin; Ryssel, Heiner

    1991-04-01

    Ion beam mixing and rapid thermal annealing (RTA) were used to prepare low resistivity (≈ 23 μΩ cm) cobalt disilicide, CoSi 2, layers. Through-metal As + ion implantation causes some mixing between Co and Si resulting in the formation of cobalt suicides. By using RTA, the silicide formation happens in the phase sequence Co 2Si, CoSi and CoSi 2. Samples which were only subjected to a one-step high temperature RTA process ( T ≥. 900°C, 1s) show significant lateral growth of cobalt suicides. By ion beam mixing of Co and Si this lateral silicide growth could be reduced efficiently. Furthermore one can get a very homogeneous CoSi 2 layer.

  12. Low-temperature ordering of FePt by formation of silicides in underlayers

    NASA Astrophysics Data System (ADS)

    Lai, Chih-Huang; Chiang, C. C.; Yang, C. H.

    2005-05-01

    A low-temperature ordering of FePt was achieved by introducing dynamic stress. The ordering temperature of FePt was reduced to 300°C by using a Cu underlayer on the HF-cleaned Si (001) substrate. An in-plane coercivity as high as 6900Oe can be obtained after post-annealing at 300°C. The formation of copper silicide, Cu3Si, during post-annealing induces a dynamic stress on FePt films, which greatly reduces the ordering temperature. Pt silicides also help to reduce the ordering temperature. The low-temperature ordering of FePt can be realized with Si /Cu underlayers on glass substrates.

  13. Carbon mediated reduction of silicon dioxide and growth of copper silicide particles in uniform width channels

    SciTech Connect

    Pizzocchero, Filippo; Bøggild, Peter; Booth, Timothy J.

    2013-09-21

    We show that surface arc-discharge deposited carbon plays a critical intermediary role in the breakdown of thermally grown oxide diffusion barriers of 90 nm on a silicon wafer at 1035 °C in an Ar/H{sub 2} atmosphere, resulting in the formation of epitaxial copper silicide particles in ≈ 10 μm wide channels, which are aligned with the intersections of the (100) surface of the wafer and the (110) planes on an oxidized silicon wafer, as well as endotaxial copper silicide nanoparticles within the wafer bulk. We apply energy dispersive x-ray spectroscopy, in combination with scanning and transmission electron microscopy of focused ion beam fabricated lammelas and trenches in the structure to elucidate the process of their formation.

  14. Development of a fused slurry silicide coating for the protection of tantalum alloys

    NASA Technical Reports Server (NTRS)

    Packer, C. M.; Perkins, R. A.

    1974-01-01

    Results are reported of a research program to develop a reliable high-performance, fused slurry silicide protective coating for a tantalum-10 tungsten alloy for use at 1427 to 1538 C at 0.1 to 10 torr air pressure under cyclic temperature conditions. A review of silicide coating performance under these conditions indicated that the primary wear-out mode is associated with widening of hairline fissures in the coating. Consideration has been given to modifying the oxidation products that form on the coating surface to provide a seal for these fissures and to minimize their widening. On the basis of an analysis of the phase relationships between silica and various other oxides, a coating having the slurry composition 2.5Mn-33Ti-64.5Si was developed that is effective in the pressure range from 1 to 10 torr.

  15. Barrierless Cu-Ni-Mo Interconnect Films with High Thermal Stability Against Silicide Formation

    NASA Astrophysics Data System (ADS)

    Li, X. N.; Liu, L. J.; Zhang, X. Y.; Chu, J. P.; Wang, Q.; Dong, C.

    2012-12-01

    Cu-Ni-Mo alloys were investigated to increase thermal stability against silicide formation. The alloy compositions were chosen such that an insoluble element (Mo) solute was dissolved into Cu via a third element Ni which is soluble in both Cu and Ni. Thin-film Cu-Ni-Mo alloys were prepared by magnetron sputtering. The films with Mo/Ni ratio of 1/12 exhibited low electrical resistivities in combination with high thermal stabilities against silicide formation, in support of a tentative "cluster-plus-glue-atom" model for stable solid solutions. In particular, a (Mo1/13Ni12/13)0.3Cu99.7 sample reached a minimum resistivity of 2.6 μΩ cm after 400°C/1 h annealing and remained highly conductive with resistivities below 3 μΩ cm even after 400°C/40 h annealing. These alloys are promising candidates for future interconnect materials.

  16. Optical characteristics of an epitaxial Fe3Si/Si(111) iron silicide film

    NASA Astrophysics Data System (ADS)

    Tarasov, I. A.; Popov, Z. I.; Varnakov, S. N.; Molokeev, M. S.; Fedorov, A. S.; Yakovlev, I. A.; Fedorov, D. A.; Ovchinnikov, S. G.

    2014-07-01

    The dispersion of the relative permittivity ɛ of a 27-nm-thick epitaxial Fe3Si iron silicide film has been measured within the E = 1.16-4.96 eV energy range using the spectroscopic ellipsometry technique. The experimental data are compared to the relative permittivity calculated in the framework of the density functional theory using the GGA-PBE approximation. For Fe3Si, the electronic structure and the electronic density of states (DOS) are calculated. The analysis of the frequencies corresponding to the transitions between the DOS peaks demonstrates qualitative agreement with the measured absorption peaks. The analysis of the single wavelength laser ellipsometry data obtained in the course of the film growth demonstrates that a continuous layer of Fe3Si iron silicide film is formed if the film thickness achieves 5 nm.

  17. Study of optical and luminescence properties of silicon — semiconducting silicide — silicon multilayer nanostructures

    NASA Astrophysics Data System (ADS)

    Galkin, N. G.; Galkin, K. N.; Dotsenko, , S. A.; Goroshko, D. L.; Shevlyagin, A. V.; Chusovitin, E. A.; Chernev, I. M.

    2016-12-01

    By method of in situ differential spectroscopy it was established that at the formation of monolayer Fe, Cr, Ca, Mg silicide and Mg stannide islands on the atomically clean silicon surface an appearance of loss peaks characteristic for these materials in the energy range of 1.1-2.6 eV is observed. An optimization of growth processes permit to grow monolithic double nanoheterostructures (DNHS) with embedded Fe, Cr and Ca nanocrystals, and also polycrystalline DNHS with NC of Mg silicide and Mg stannide and Ca disilicide. By methods of optical spectroscopy and Raman spectroscopy it was shown that embedded NC form intensive peaks in the reflectance spectra at energies up to 2.5 eV and Raman peaks. In DNS with β-FeSi2 NC a photoluminescence and electroluminescence at room temperature were firstly observed.

  18. Neutronic study on conversion of SAFARI-1 to LEU silicide fuel

    SciTech Connect

    Ball, G.; Pond, R.; Hanan, N.; Matos, J.

    1995-02-01

    This paper marks the initial study into the technical and economic feasibility of converting the SAFARI-1 reactor in South Africa to LEU silicide fuel. Several MTR assembly geometries and LEU uranium densities have been studied and compared with MEU and HEU fuels. Two factors of primary importance for conversion of SAFARI-1 to LEU fuel are the economy of the fuel cycle and the performance of the incore and excore irradiation positions.

  19. Self-assembled rare-earth silicide nanowires on Si(001)

    SciTech Connect

    Nogami, J.; Liu, B. Z.; Katkov, M. V.; Ohbuchi, C.; Birge, Norman O.

    2001-06-15

    This paper presents scanning tunneling microscope images of several rare-earth metal silicides grown on silicon (001). For certain of the metals studied (Dy, Ho), an anisotropy in lattice match with the substrate results in the formation of nanowires. These nanowires have desirable properties such as nanometer lateral dimension, crystalline structure with a low density of defects, and micrometer scale length. Tunneling spectroscopy on the nanowires indicates that they are metallic.

  20. Practical field repair of fused slurry silicide coating for space shuttle t.p.s.

    NASA Technical Reports Server (NTRS)

    Reznik, B. D.

    1971-01-01

    Study of short-time high-temperature diffusion treatments as part of a program of development of methods of reapplying fused slurry silicide coating in the field. The metallographic structure and oxidation behavior of R512E applied to Cb-752 coated under simulated field repair conditions was determined. Oxidation testing in reduced pressure environment has shown that performance equivalent to furnace-processed specimens can be obtained in a two-minute diffusion at 2700 F.

  1. Isothermal Diagrams of Precipitation of Silicide and Aluminide Phases in Refractory Titanium Alloys

    NASA Astrophysics Data System (ADS)

    Popov, A. A.; Popova, M. A.

    2017-03-01

    Processes of precipitation of silicides and aluminides in commercial titanium alloys under different modes of heat treatment are studied. The effect of alloying on the types of precipitating particles is considered. The temperature ranges of formation of intermetallics are determined and the possible mechanisms of transformation of particles of different types are discussed. A schematic isothermal diagram of decomposition of metastable phases in refractory titanium alloys is suggested.

  2. Large-area Co-silicide nanodot arrays produced by colloidal nanosphere lithography and thermal annealing.

    PubMed

    Cheng, S L; Wong, S L; Lu, S W; Chen, H

    2008-09-01

    We report here the successful fabrication of large-area size-tunable periodic arrays of cobalt and Co-silicide nanodots on silicon substrates by employing the colloidal nanosphere lithography (NSL) technique and heat treatments. The growth of low-resistivity epitaxial CoSi(2) was found to be more favorable for the samples with smaller Co nanodot sizes. The sizes of the epitaxial CoSi(2) nanodots can be tuned from 50 to 100 nm by varying the diameter of the colloidal spheres and annealing temperatures. The epitaxial CoSi(2) nanodots were found to grow with an epitaxial orientation with respect to the (001)Si substrates: [001]CoSi(2)//[001]Si and (200)CoSi(2)//(400)Si. From the results of planview HRTEM, XTEM, and SAED analysis, the epitaxial CoSi(2) nanodots were identified to be inverse pyramids in shape, and the average sizes of the faceted silicide nanodots were measured to decrease with annealing temperature. The observed results present the exciting prospect that with appropriate controls, the colloidal NSL technique promises to facilitate the growth of a variety of well-ordered silicide nanodots with selected shape, size, and periodicity.

  3. Silicide/Silicon Heterointerfaces, Reaction Kinetics and Ultra-short Channel Devices

    NASA Astrophysics Data System (ADS)

    Tang, Wei

    Nickel silicide is one of the electrical contact materials widely used on very large scale integration (VLSI) of Si devices in microelectronic industry. This is because the silicide/silicon interface can be formed in a highly controlled manner to ensure reproducibility of optimal structural and electrical properties of the metal-Si contacts. These advantages can be inherited to Si nanowire (NW) field-effect transistors (FET) device. Due to the technological importance of nickel silicides, fundamental materials science of nickel silicides formation (Ni-Si reaction), especially in nanoscale, has raised wide interest and stimulate new insights and understandings. In this dissertation, in-situ transmission electron microscopy (TEM) in combination with FET device characterization will be demonstrated as useful tools in nano-device fabrication as well as in gaining insights into the process of nickel silicide formation. The shortest transistor channel length (17 nm) fabricated on a vapor-liquid-solid (VLS) grown silicon nanowire (NW) has been demonstrated by controlled reaction with Ni leads on an in-situ transmission electron microscope (TEM) heating stage at a moderate temperature of 400 ºC. NiSi2 is the leading phase, and the silicide-silicon interface is an atomically sharp type-A interface. At such channel lengths, high maximum on-currents of 890 (microA/microm) and a maximum transconductance of 430 (microS/microm) were obtained, which pushes forward the performance of bottom-up Si NW Schottky barrier field-effect transistors (SB-FETs). Through accurate control over the silicidation reaction, we provide a systematic study of channel length dependent carrier transport in a large number of SB-FETs with channel lengths in the range of (17 nm -- 3.6 microm). Our device results corroborate with our transport simulations and reveal a characteristic type of short channel effects in SB-FETs, both in on- and off-state, which is different from that in conventional MOSFETs

  4. High current metal ion implantation to synthesize some conducting metal-silicides

    SciTech Connect

    Liu, B. X.; Gao, K. Y.

    1999-06-10

    High current metal-ion implantation by a metal vapor vacuum arc ion source was conducted to synthesize some conducting metal-silicides. It was found that C54-TiSi{sub 2}, ZrSi{sub 2}, NiSi{sub 2}, CoSi{sub 2}, {beta}-FeSi{sub 2}, NbSi{sub 2} and TaSi{sub 2} layers on Si wafers with good electric properties could be obtained directly after implantation. In comparison, the formation of some other silicides like {alpha}-FeSi{sub 2}, NbSi{sub 2}, TaSi{sub 2}, tetragonal-WSi{sub 2} and tetragonal-MoSi{sub 2} required an additional post-annealing to improve their crystallinity and thus their electric properties. Interestingly, the NiSi{sub 2} layers of superior electric properties were obtained at a selected Ni-ion current density of 35 {mu}A/cm{sup 2}. At this current, a beam heating raised the Si wafer to a specific temperature of 380 deg. C, at which the size difference between NiSi{sub 2} and Si lattices was nil. The resistivity of the NiSi{sub 2} layers so obtained was much lower than that of the Ni-disilicide formed by solid-state reaction at >750 deg. C. The formation mechanism of the above metal-silicides and the associated electric properties will also be discussed.

  5. Palladium silicide formation under the influence of nitrogen and oxygen impurities

    NASA Technical Reports Server (NTRS)

    Ho, K. T.; Lien, C.-D.; Nicolet, M.-A.

    1985-01-01

    The effect of impurities on the growth of the Pd2Si layer upon thermal annealing of a Pd film on 100 line-type and amorphous Si substrates is investigated. Nitrogen and oxygen impurities are introduced into either Pd or Si which are subsequently annealed to form Pd2Si. The complementary techniques of Rutherford backscattering spectrometry, and N-15(p, alpha)C-12 or O-18(p, alpha)N-15 nuclear reaction, are used to investigate the behavior of nitrogen or oxygen and the alterations each creates during silicide formation. Both nitrogen and oxygen retard the silicide growth rate if initially present in Si. When they are initially in Pd, there is no significant retardation; instead, an interesting snow-plowing effect of N or O by the reaction interface of Pd2Si is observed. By using N implanted into Si as a marker, Pd and Si appear to trade roles as the moving species when the silicide front reaches the nitrogen-rich region.

  6. Palladium silicide formation under the influence of nitrogen and oxygen impurities

    NASA Technical Reports Server (NTRS)

    Ho, K. T.; Lien, C.-D.; Nicolet, M.-A.

    1985-01-01

    The effect of impurities on the growth of the Pd2Si layer upon thermal annealing of a Pd film on 100 line-type and amorphous Si substrates is investigated. Nitrogen and oxygen impurities are introduced into either Pd or Si which are subsequently annealed to form Pd2Si. The complementary techniques of Rutherford backscattering spectrometry, and N-15(p, alpha)C-12 or O-18(p, alpha)N-15 nuclear reaction, are used to investigate the behavior of nitrogen or oxygen and the alterations each creates during silicide formation. Both nitrogen and oxygen retard the silicide growth rate if initially present in Si. When they are initially in Pd, there is no significant retardation; instead, an interesting snow-plowing effect of N or O by the reaction interface of Pd2Si is observed. By using N implanted into Si as a marker, Pd and Si appear to trade roles as the moving species when the silicide front reaches the nitrogen-rich region.

  7. Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

    SciTech Connect

    Yuryev, V. A. Chizh, K. V.; Chapnin, V. A.; Mironov, S. A.; Dubkov, V. P.; Uvarov, O. V.; Kalinushkin, V. P.; Senkov, V. M.; Nalivaiko, O. Y.; Novikau, A. G.; Gaiduk, P. I.

    2015-05-28

    Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si{sub 3}N{sub 4}/SiO{sub 2}/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about −2%/ °C in the temperature interval from 25 to 50 °C.

  8. Nickel silicide for Ni/Cu contact mono-silicon solar cells

    NASA Astrophysics Data System (ADS)

    Min, Seon Kyu; Kim, Dong Ho; Lee, Soo Hong

    2013-07-01

    A solar cell contact needs to be as thin as possible and have high conductivity since a thick contact causes shading loss and reduced current. Plating is a very suitable method for making a metal contact, and nickel is a high conductivity metal which is easy to form into a contact using electroless plating. After the nickel is plated on the silicon substrate, the nickel contact should be fired in order to form nickel silicide. Nickel silicide is used for the seed layer of the Cu contact for silicon solar cells. In this study, we replaced the screen-printed contact of the Passivated Emitter Solar Cell (PESC) with a Ni/Cu contact that has a selective emitter. The nickel layer was used as the seed layer, adhesion layer, and Cu diffusion barrier. The main contact was formed by plating the copper. The firing conditions of a conventional furnace were varied in order to form nickel silicide. Consequently, we achieved the best solar cell efficiency of 18.15%.

  9. Low-Temperature Wet Conformal Nickel Silicide Deposition for Transistor Technology through an Organometallic Approach.

    PubMed

    Lin, Tsung-Han; Margossian, Tigran; De Marchi, Michele; Thammasack, Maxime; Zemlyanov, Dmitry; Kumar, Sudhir; Jagielski, Jakub; Zheng, Li-Qing; Shih, Chih-Jen; Zenobi, Renato; De Micheli, Giovanni; Baudouin, David; Gaillardon, Pierre-Emmanuel; Copéret, Christophe

    2017-02-08

    The race for performance of integrated circuits is nowadays facing a downscale limitation. To overpass this nanoscale limit, modern transistors with complex geometries have flourished, allowing higher performance and energy efficiency. Accompanying this breakthrough, challenges toward high-performance devices have emerged on each significant step, such as the inhomogeneous coverage issue and thermal-induced short circuit issue of metal silicide formation. In this respect, we developed a two-step organometallic approach for nickel silicide formation under near-ambient temperature. Transmission electron and atomic force microscopy show the formation of a homogeneous and conformal layer of NiSix on pristine silicon surface. Post-treatment decreases the carbon content to a level similar to what is found for the original wafer (∼6%). X-ray photoelectron spectroscopy also reveals an increasing ratio of Si content in the layer after annealing, which is shown to be NiSi2 according to X-ray absorption spectroscopy investigation on a Si nanoparticle model. I-V characteristic fitting reveals that this NiSi2 layer exhibits a competitive Schottky barrier height of 0.41 eV and series resistance of 8.5 Ω, thus opening an alternative low-temperature route for metal silicide formation on advanced devices.

  10. Structural and electrochemical properties of nanostructured nickel silicides by reduction and silicification of high-surface-area nickel oxide

    SciTech Connect

    Chen, Xiao; Zhang, Bingsen; Li, Chuang; Shao, Zhengfeng; Su, Dangsheng; Williams, Christopher T.; Liang, Changhai

    2012-03-15

    Graphical abstract: Nanostructured nickel silicides have been synthesized by reduction and silification of high-surface-area nickel oxide, and exhibited remarkably like-noble metal property, lower electric resistivity, and ferromagnetism at room temperature. Highlights: Black-Right-Pointing-Pointer NiSi{sub x} have been prepared by reduction and silification of high-surface-area NiO. Black-Right-Pointing-Pointer The structure of nickel silicides changed with increasing reaction temperature. Black-Right-Pointing-Pointer Si doping into nickel changed the magnetic properties of metallic nickel. Black-Right-Pointing-Pointer NiSi{sub x} have remarkably lower electric resistivity and like-noble metal property. -- Abstract: Nanostructured nickel silicides have been prepared by reduction and silicification of high-surface-area nickel oxide (145 m{sup 2} g{sup -1}) produced via precipitation. The prepared materials were characterized by nitrogen adsorption, X-ray diffraction, thermal analysis, FT-IR spectroscopy, scanning electron microscopy, transmission electron microscopy, magnetic and electrochemical measurements. The nickel silicide formation involves the following sequence: NiO (cubic) {yields} Ni (cubic) {yields} Ni{sub 2}Si (orthorhombic) {yields} NiSi (orthorhombic) {yields} NiSi{sub 2} (cubic), with particles growing from 13.7 to 21.3 nm. The nickel silicides are ferromagnetic at room temperature, and their saturation magnetization values change drastically with the increase of Si content. Nickel silicides have remarkably low electrical resistivity and noble metal-like properties because of a constriction of the Ni d band and an increase of the electronic density of states. The results suggest that such silicides are promising candidates as inexpensive yet functional materials for applications in electrochemistry as well as catalysis.

  11. Bog Manganese Ore: A Resource for High Manganese Steel Making

    NASA Astrophysics Data System (ADS)

    Pani, Swatirupa; Singh, Saroj K.; Mohapatra, Birendra K.

    2016-06-01

    Bog manganese ore, associated with the banded iron formation of the Iron Ore Group (IOG), occurs in large volume in northern Odisha, India. The ore is powdery, fine-grained and soft in nature with varying specific gravity (2.8-3.9 g/cm3) and high thermo-gravimetric loss, It consists of manganese (δ-MnO2, manganite, cryptomelane/romanechite with minor pyrolusite) and iron (goethite/limonite and hematite) minerals with sub-ordinate kaolinite and quartz. It shows oolitic/pisolitic to globular morphology nucleating small detritus of quartz, pyrolusite/romanechite and hematite. The ore contains around 23% Mn and 28% Fe with around 7% of combined alumina and silica. Such Mn ore has not found any use because of its sub-grade nature and high iron content, and is hence considered as waste. The ore does not respond to any physical beneficiation techniques because of the combined state of the manganese and iron phases. Attempts have been made to recover manganese and iron value from such ore through smelting. A sample along with an appropriate charge mix when processed through a plasma reactor, produced high-manganese steel alloy having 25% Mn within a very short time (<10 min). Minor Mn content from the slag was recovered through acid leaching. The aim of this study has been to recover a value-added product from the waste.

  12. Thermal transport across metal silicide-silicon interfaces: An experimental comparison between epitaxial and nonepitaxial interfaces

    NASA Astrophysics Data System (ADS)

    Ye, Ning; Feser, Joseph P.; Sadasivam, Sridhar; Fisher, Timothy S.; Wang, Tianshi; Ni, Chaoying; Janotti, Anderson

    2017-02-01

    Silicides are used extensively in nano- and microdevices due to their low electrical resistivity, low contact resistance to silicon, and their process compatibility. In this work, the thermal interface conductance of TiSi2, CoSi2, NiSi, and PtSi are studied using time-domain thermoreflectance. Exploiting the fact that most silicides formed on Si(111) substrates grow epitaxially, while most silicides on Si(100) do not, we study the effect of epitaxy, and show that for a wide variety of interfaces there is no dependence of interface conductance on the detailed structure of the interface. In particular, there is no difference in the thermal interface conductance between epitaxial and nonepitaxial silicide/silicon interfaces, nor between epitaxial interfaces with different interface orientations. While these silicide-based interfaces yield the highest reported interface conductances of any known interface with silicon, none of the interfaces studied are found to operate close to the phonon radiation limit, indicating that phonon transmission coefficients are nonunity in all cases and yet remain insensitive to interfacial structure. In the case of CoSi2, a comparison is made with detailed computational models using (1) full-dispersion diffuse mismatch modeling (DMM) including the effect of near-interfacial strain, and (2) an atomistic Green' function (AGF) approach that integrates near-interface changes in the interatomic force constants obtained through density functional perturbation theory. Above 100 K, the AGF approach significantly underpredicts interface conductance suggesting that energy transport does not occur purely by coherent transmission of phonons, even for epitaxial interfaces. The full-dispersion DMM closely predicts the experimentally observed interface conductances for CoSi2, NiSi, and TiSi2 interfaces, while it remains an open question whether inelastic scattering, cross-interfacial electron-phonon coupling, or other mechanisms could also account for

  13. Thermal chemistry of Mn{sub 2}(CO){sub 10} during deposition of thin manganese films on silicon oxide and on copper surfaces

    SciTech Connect

    Qin Xiangdong; Sun Huaxing; Zaera, Francisco

    2012-01-15

    The surface chemistry of dimanganese decacarbonyl on the native oxide of Si(100) wafers was characterized with the aid of x-ray photoelectron spectroscopy. Initial experiments in a small stainless-steel reactor identified a narrow range of temperatures, between approximately 445 and 465 K, in which the deposition of manganese could be achieved in a self-limiting fashion, as is desirable for atomic layer deposition. Deposition at higher temperatures leads to multilayer growth, but the extent of this Mn deposition reverses at even higher temperatures (about 625 K), and also ifhydrogen is added to the reaction mixture. Extensive decarbonylation takes place below room temperature, but limited C-O bond dissociation and carbon deposition are still seen after high exposures at 625 K. The films deposited at low ({approx}450 K) temperatures are mostly in the form of MnO, but at 625 K that converts to a manganese silicate, and upon higher doses a manganese silicide forms at the SiO{sub 2}/Si(100) interface as well. No metallic manganese could be deposited with this precursor on either silicon dioxide or copper surfaces.

  14. An experimental study of the influence of oxygen on silicide formation with tungsten deposited from tungsten hexafluoride

    NASA Astrophysics Data System (ADS)

    Zhang, S.-L.; Smith, U.; Buchta, R.; Östling, M.

    1991-01-01

    Tungsten disilicide (WSi2) was formed by annealing tungsten films deposited by low-pressure chemical vapor deposition on <100>-silicon substrates. The influence of oxygen on the silicidation rate was studied. Si wafers with different oxygen content in the form of Czochralski, float-zone, and epitaxial wafers were used. Oxygen was also ion implanted into either the silicon substrate or the as-deposited tungsten film. The Rutherford backscattering technique was used to follow the progress of the silicidation. The silicidation rate was found to be dependent on the oxygen content of the Si substrates. The rate was lowest for Czochralski substrates and highest for float-zone substrates. Secondary ion mass spectroscopy was used to study the oxygen and fluorine profiles in the films prior to and after silicidation. Growth of WSi2 was found to be retarded concurrently with a pile-up of fluorine at the tungsten side of the W/WSi2 interface and a gettering of oxygen from the annealing atmosphere at the interface. Growth of WSi2 was then transferred to the tungsten surface. Oxygen implantation into silicon and tungsten, respectively, reduced the rate of silicide formation. Oxygen implantation into tungsten altered the distribution of fluorine and suppressed WSi2 growth at the tungsten surface. The observations led to a conceptual model, which ascribes the retardation in the growth of the inner WSi2 to a``poisoning'' effect caused by the increase of oxygen and fluorine levels at the interface.

  15. Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon

    SciTech Connect

    Escobedo-Cousin, Enrique; Vassilevski, Konstantin; Hopf, Toby; Wright, Nick; O'Neill, Anthony; Horsfall, Alton; Goss, Jonathan; Cumpson, Peter

    2013-03-21

    Patterned few-layer graphene (FLG) films were obtained by local solid phase growth from nickel silicide supersaturated with carbon, following a fabrication scheme, which allows the formation of self-aligned ohmic contacts on FLG and is compatible with conventional SiC device processing methods. The process was realised by the deposition and patterning of thin Ni films on semi-insulating 6H-SiC wafers followed by annealing and the selective removal of the resulting nickel silicide by wet chemistry. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were used to confirm both the formation and subsequent removal of nickel silicide. The impact of process parameters such as the thickness of the initial Ni layer, annealing temperature, and cooling rates on the FLG films was assessed by Raman spectroscopy, XPS, and atomic force microscopy. The thickness of the final FLG film estimated from the Raman spectra varied from 1 to 4 monolayers for initial Ni layers between 3 and 20 nm thick. Self-aligned contacts were formed on these patterned films by contact photolithography and wet etching of nickel silicide, which enabled the fabrication of test structures to measure the carrier concentration and mobility in the FLG films. A simple model of diffusion-driven solid phase chemical reaction was used to explain formation of the FLG film at the interface between nickel silicide and silicon carbide.

  16. The deposition of aluminide and silicide coatings on {gamma}-TiAl using the halide-activated pack cementation method

    SciTech Connect

    Munro, T.C; Gleeson, B.

    1996-12-01

    The halide-activated pack cementation method (HAPC) was utilized to deposit aluminide and silicide coatings on nominally stoichiometric {gamma}-TiAl. The deposition temperature was 1,000 C and deposition times ranged from 2 to 12 hours. The growth rates of the coatings were diffusion controlled, with the rate of aluminide growth being about a factor of 2 greater than that of silicide growth. The aluminide coating was inward growing and consisted of a thick, uniform outer layer of TiAl{sub 3} and a thin inner layer of TiAl{sub 2}, with the rate-controlling step being the diffusion of aluminum from the pack into the substrate. Annealing experiments at 1,100 C showed that the interdiffusion between the aluminide coating and the {gamma}-TiAl substrate was rapid. In contrast to the aluminide coating, the silicide coating was nonuniform and porous, consisting primarily of TiSi{sub 2}, TiSi, and Ti{sub 5}Si{sub 4}, with the rate-controlling step for the coating growth believed to be the diffusion of aluminum into the {gamma}-TiAl ahead of the silicide/{gamma}-TiAl interface. The microstructural evolution of the aluminide and silicide coating structures is discussed qualitatively.

  17. 21 CFR 184.1452 - Manganese gluconate.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 3 2014-04-01 2014-04-01 false Manganese gluconate. 184.1452 Section 184.1452... GRAS § 184.1452 Manganese gluconate. (a) Manganese gluconate (C12H22MnO14·2H2O, CAS Reg. No. 648-0953-0998) is a slightly pink colored powder. It is obtained by reacting manganese carbonate with gluconic...

  18. Structure and nucleation mechanism of nickel silicide on Si(111) derived from surface extended-x-ray-absorption fine structure p

    SciTech Connect

    Comin, F.; Rowe, J.E.; Citrin, P.H.

    1983-12-26

    Based on the direct structure determination of the silicide formed at room temperature from <1 monolayer of Ni deposited on Si(111) and from Ni coverages up to five monolayers, a model for silicide growth and interface formation is presented. The model forms a basis for understanding many of the photoemission, ion scattering, and microscopy results from this system.

  19. Bacteriology of Manganese Nodules

    PubMed Central

    Trimble, R. B.; Ehrlich, H. L.

    1968-01-01

    MnO2 reduction by aerobic growing cultures of Bacillus 29 and coccus 32, isolated from ferromanganese nodules, was assessed for 7 days. A 1-day lag was observed before the onset of MnO2 reduction by either culture. Addition of HgCl2 to a final concentration of about 10-3 M caused a rapid cessation of MnO2 reduction by the growing cultures. Neither culture reduced MnO2 when grown under continued anaerobiosis from the start of an experiment. However, if conditions were made anaerobic after MnO2 reduction was initiated, reduction continued at a rate only slightly lower than that under aerobic conditions. Resting-cell cultures reduced MnO2 equally well aerobically and anaerobically, provided that ferricyanide was present to serve as electron carrier. These findings showed that oxygen is needed for culture adaptation to MnO2 reduction, and that oxygen does not interfere with microbial MnO2 reduction itself. Both cultures caused sharp drops in the pH of the medium during MnO2 reduction: with coccus 32, during the entire incubation time; with Bacillus 29, for the first 3 days. The Eh of the medium fluctuated with either culture and never fell below 469 mv with Bacillus 29 and below 394 mv with coccus 32. The rates of glucose consumption and Mn2+ release by Bacillus 29 and coccus 32 were fairly constant, but the rates of lactate and pyruvate production were not. Although acid production undoubtedly helped in the reduction of pyrolusite (MnO2) by the bacteria, it did not appear to be important in the reduction of manganese oxide in ferromanganese nodules, as shown by the results with a nodule enrichment. PMID:16349802

  20. Manganese and the brain.

    PubMed

    Tuschl, Karin; Mills, Philippa B; Clayton, Peter T

    2013-01-01

    Manganese (Mn) is an essential trace metal that is pivotal for normal cell function and metabolism. Its homeostasis is tightly regulated; however, the mechanisms of Mn homeostasis are poorly characterized. While a number of proteins such as the divalent metal transporter 1, the transferrin/transferrin receptor complex, the ZIP family metal transporters ZIP-8 and ZIP-14, the secretory pathway calcium ATPases SPCA1 and SPCA2, ATP13A2, and ferroportin have been suggested to play a role in Mn transport, the degree that each of them contributes to Mn homeostasis has still to be determined. The recent discovery of SLC30A10 as a crucial Mn transporter in humans has shed further light on our understanding of Mn transport across the cell. Although essential, Mn is toxic at high concentrations. Mn neurotoxicity has been attributed to impaired dopaminergic (DAergic), glutamatergic and GABAergic transmission, mitochondrial dysfunction, oxidative stress, and neuroinflammation. As a result of preferential accumulation of Mn in the DAergic cells of the basal ganglia, particularly the globus pallidus, Mn toxicity causes extrapyramidal motor dysfunction. Firstly described as "manganism" in miners during the nineteenth century, this movement disorder resembles Parkinson's disease characterized by hypokinesia and postural instability. To date, a variety of acquired causes of brain Mn accumulation can be distinguished from an autosomal recessively inherited disorder of Mn metabolism caused by mutations in the SLC30A10 gene. Both, acquired and inherited hypermanganesemia, lead to Mn deposition in the basal ganglia associated with pathognomonic magnetic resonance imaging appearances of hyperintense basal ganglia on T1-weighted images. Current treatment strategies for Mn toxicity combine chelation therapy to reduce the body Mn load and iron (Fe) supplementation to reduce Mn binding to proteins that interact with both Mn and Fe. This chapter summarizes our current understanding of Mn

  1. Access to Manganese in the Year 2005

    DTIC Science & Technology

    1992-04-14

    current production of manganese is consumed by the iron and steel industry where it is combined with sulphur to produce a manganese sulphide slag that...unexploited. The principal minerals produced include iron ore, limestone, bauxite, salt, asbestos ore, manganese, kaolin clay, chrome ore barite, zinc ore

  2. 21 CFR 582.5455 - Manganese glycerophosphate.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 6 2014-04-01 2014-04-01 false Manganese glycerophosphate. 582.5455 Section 582.5455 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED... Dietary Supplements 1 § 582.5455 Manganese glycerophosphate. (a) Product. Manganese glycerophosphate. (b...

  3. 21 CFR 582.5452 - Manganese gluconate.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 6 2012-04-01 2012-04-01 false Manganese gluconate. 582.5452 Section 582.5452 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Supplements 1 § 582.5452 Manganese gluconate. (a) Product. Manganese gluconate. (b) Conditions of use. This...

  4. 21 CFR 582.5455 - Manganese glycerophosphate.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 6 2012-04-01 2012-04-01 false Manganese glycerophosphate. 582.5455 Section 582.5455 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED... Dietary Supplements 1 § 582.5455 Manganese glycerophosphate. (a) Product. Manganese glycerophosphate. (b...

  5. 21 CFR 582.5449 - Manganese citrate.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 6 2014-04-01 2014-04-01 false Manganese citrate. 582.5449 Section 582.5449 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Supplements 1 § 582.5449 Manganese citrate. (a) Product. Manganese citrate. (b) Conditions of use. This...

  6. 21 CFR 582.5452 - Manganese gluconate.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 6 2014-04-01 2014-04-01 false Manganese gluconate. 582.5452 Section 582.5452 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Supplements 1 § 582.5452 Manganese gluconate. (a) Product. Manganese gluconate. (b) Conditions of use. This...

  7. 21 CFR 582.5455 - Manganese glycerophosphate.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 6 2013-04-01 2013-04-01 false Manganese glycerophosphate. 582.5455 Section 582.5455 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED... Dietary Supplements 1 § 582.5455 Manganese glycerophosphate. (a) Product. Manganese glycerophosphate. (b...

  8. 21 CFR 582.5458 - Manganese hypophosphite.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 6 2012-04-01 2012-04-01 false Manganese hypophosphite. 582.5458 Section 582.5458 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Supplements 1 § 582.5458 Manganese hypophosphite. (a) Product. Manganese hypophosphite. (b) Conditions of use...

  9. 21 CFR 582.5452 - Manganese gluconate.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 6 2013-04-01 2013-04-01 false Manganese gluconate. 582.5452 Section 582.5452 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Supplements 1 § 582.5452 Manganese gluconate. (a) Product. Manganese gluconate. (b) Conditions of use. This...

  10. 21 CFR 582.5461 - Manganese sulfate.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 6 2012-04-01 2012-04-01 false Manganese sulfate. 582.5461 Section 582.5461 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Supplements 1 § 582.5461 Manganese sulfate. (a) Product. Manganese sulfate. (b) Conditions of use. This...

  11. 21 CFR 582.5458 - Manganese hypophosphite.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 6 2013-04-01 2013-04-01 false Manganese hypophosphite. 582.5458 Section 582.5458 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Supplements 1 § 582.5458 Manganese hypophosphite. (a) Product. Manganese hypophosphite. (b) Conditions of use...

  12. 21 CFR 582.5461 - Manganese sulfate.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 6 2013-04-01 2013-04-01 false Manganese sulfate. 582.5461 Section 582.5461 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Supplements 1 § 582.5461 Manganese sulfate. (a) Product. Manganese sulfate. (b) Conditions of use. This...

  13. 21 CFR 582.5458 - Manganese hypophosphite.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 6 2014-04-01 2014-04-01 false Manganese hypophosphite. 582.5458 Section 582.5458 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Supplements 1 § 582.5458 Manganese hypophosphite. (a) Product. Manganese hypophosphite. (b) Conditions of use...

  14. 21 CFR 582.5461 - Manganese sulfate.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 6 2014-04-01 2014-04-01 false Manganese sulfate. 582.5461 Section 582.5461 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Supplements 1 § 582.5461 Manganese sulfate. (a) Product. Manganese sulfate. (b) Conditions of use. This...

  15. 21 CFR 582.5446 - Manganese chloride.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 6 2014-04-01 2014-04-01 false Manganese chloride. 582.5446 Section 582.5446 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Supplements 1 § 582.5446 Manganese chloride. (a) Product. Manganese chloride. (b) Conditions of use. This...

  16. 21 CFR 582.5449 - Manganese citrate.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 6 2013-04-01 2013-04-01 false Manganese citrate. 582.5449 Section 582.5449 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Supplements 1 § 582.5449 Manganese citrate. (a) Product. Manganese citrate. (b) Conditions of use. This...

  17. 21 CFR 582.5446 - Manganese chloride.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 6 2013-04-01 2013-04-01 false Manganese chloride. 582.5446 Section 582.5446 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Supplements 1 § 582.5446 Manganese chloride. (a) Product. Manganese chloride. (b) Conditions of use. This...

  18. 21 CFR 582.5446 - Manganese chloride.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 6 2012-04-01 2012-04-01 false Manganese chloride. 582.5446 Section 582.5446 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Supplements 1 § 582.5446 Manganese chloride. (a) Product. Manganese chloride. (b) Conditions of use. This...

  19. 21 CFR 582.5449 - Manganese citrate.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 6 2012-04-01 2012-04-01 false Manganese citrate. 582.5449 Section 582.5449 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Supplements 1 § 582.5449 Manganese citrate. (a) Product. Manganese citrate. (b) Conditions of use. This...

  20. Manganese depresses rat heart muscle respiration

    USDA-ARS?s Scientific Manuscript database

    It has previously been reported that moderately high dietary manganese (Mn) in combination with marginal magnesium (Mg) resulted in ultrastructural damage to heart mitochondria. Manganese may replace Mg in biological functions, including the role of enzyme cofactor. Manganese may accumulate and subs...

  1. 21 CFR 184.1446 - Manganese chloride.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... Specific Substances Affirmed as GRAS § 184.1446 Manganese chloride. (a) Manganese chloride (MnCl2·4H2O, CAS... dichloride. It is prepared by dissolving manganous oxide, pyrolusite ore (MnO2), or reduced manganese ore in...

  2. 21 CFR 582.5452 - Manganese gluconate.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 6 2010-04-01 2010-04-01 false Manganese gluconate. 582.5452 Section 582.5452 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Supplements 1 § 582.5452 Manganese gluconate. (a) Product. Manganese gluconate. (b) Conditions of use. This...

  3. 21 CFR 582.5458 - Manganese hypophosphite.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 6 2010-04-01 2010-04-01 false Manganese hypophosphite. 582.5458 Section 582.5458 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Supplements 1 § 582.5458 Manganese hypophosphite. (a) Product. Manganese hypophosphite. (b) Conditions of use...

  4. 21 CFR 582.5458 - Manganese hypophosphite.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 6 2011-04-01 2011-04-01 false Manganese hypophosphite. 582.5458 Section 582.5458 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Supplements 1 § 582.5458 Manganese hypophosphite. (a) Product. Manganese hypophosphite. (b) Conditions of use...

  5. 21 CFR 582.5461 - Manganese sulfate.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 6 2011-04-01 2011-04-01 false Manganese sulfate. 582.5461 Section 582.5461 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Supplements 1 § 582.5461 Manganese sulfate. (a) Product. Manganese sulfate. (b) Conditions of use. This...

  6. 21 CFR 582.5452 - Manganese gluconate.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 6 2011-04-01 2011-04-01 false Manganese gluconate. 582.5452 Section 582.5452 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Supplements 1 § 582.5452 Manganese gluconate. (a) Product. Manganese gluconate. (b) Conditions of use. This...

  7. 21 CFR 582.5446 - Manganese chloride.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 6 2010-04-01 2010-04-01 false Manganese chloride. 582.5446 Section 582.5446 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Supplements 1 § 582.5446 Manganese chloride. (a) Product. Manganese chloride. (b) Conditions of use. This...

  8. 21 CFR 582.5446 - Manganese chloride.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 6 2011-04-01 2011-04-01 false Manganese chloride. 582.5446 Section 582.5446 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Supplements 1 § 582.5446 Manganese chloride. (a) Product. Manganese chloride. (b) Conditions of use. This...

  9. 21 CFR 582.5455 - Manganese glycerophosphate.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 6 2011-04-01 2011-04-01 false Manganese glycerophosphate. 582.5455 Section 582.5455 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED... Dietary Supplements 1 § 582.5455 Manganese glycerophosphate. (a) Product. Manganese glycerophosphate. (b...

  10. 21 CFR 582.5449 - Manganese citrate.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 6 2011-04-01 2011-04-01 false Manganese citrate. 582.5449 Section 582.5449 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Supplements 1 § 582.5449 Manganese citrate. (a) Product. Manganese citrate. (b) Conditions of use. This...

  11. 21 CFR 582.5455 - Manganese glycerophosphate.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 6 2010-04-01 2010-04-01 false Manganese glycerophosphate. 582.5455 Section 582.5455 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED... Dietary Supplements 1 § 582.5455 Manganese glycerophosphate. (a) Product. Manganese glycerophosphate. (b...

  12. 21 CFR 582.5449 - Manganese citrate.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 6 2010-04-01 2010-04-01 false Manganese citrate. 582.5449 Section 582.5449 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Supplements 1 § 582.5449 Manganese citrate. (a) Product. Manganese citrate. (b) Conditions of use. This...

  13. Manganese uptake and streptococcal virulence.

    PubMed

    Eijkelkamp, Bart A; McDevitt, Christopher A; Kitten, Todd

    2015-06-01

    Streptococcal solute-binding proteins (SBPs) associated with ATP-binding cassette transporters gained widespread attention first as ostensible adhesins, next as virulence determinants, and finally as metal ion transporters. In this mini-review, we will examine our current understanding of the cellular roles of these proteins, their contribution to metal ion homeostasis, and their crucial involvement in mediating streptococcal virulence. There are now more than 35 studies that have collected structural, biochemical and/or physiological data on the functions of SBPs across a broad range of bacteria. This offers a wealth of data to clarify the formerly puzzling and contentious findings regarding the metal specificity amongst this group of essential bacterial transporters. In particular we will focus on recent findings related to biological roles for manganese in streptococci. These advances will inform efforts aimed at exploiting the importance of manganese and manganese acquisition for the design of new approaches to combat serious streptococcal diseases.

  14. Exploitation of a self-limiting process for reproducible formation of ultrathin Ni{sub 1-x}Pt{sub x} silicide films

    SciTech Connect

    Zhang Zhen; Zhu Yu; Rossnagel, Steve; Murray, Conal; Jordan-Sweet, Jean; Yang, Bin; Gaudet, Simon; Desjardins, Patrick; Kellock, Andrew J.; Ozcan, Ahmet; Zhang Shili; Lavoie, Christian

    2010-12-20

    This letter reports on a process scheme to obtain highly reproducible Ni{sub 1-x}Pt{sub x} silicide films of 3-6 nm thickness formed on a Si(100) substrate. Such ultrathin silicide films are readily attained by sputter deposition of metal films, metal stripping in wet chemicals, and final silicidation by rapid thermal processing. This process sequence warrants an invariant amount of metal intermixed with Si in the substrate surface region independent of the initial metal thickness, thereby leading to a self-limiting formation of ultrathin silicide films. The crystallographic structure, thickness, uniformity, and morphological stability of the final silicide films depend sensitively on the initial Pt fraction.

  15. SEPARATING PROTOACTINIUM WITH MANGANESE DIOXIDE

    DOEpatents

    Seaborg, G.T.; Gofman, J.W.; Stoughton, R.W.

    1958-04-22

    The preparation of U/sup 235/ and an improved method for isolating Pa/ sup 233/ from foreign products present in neutronirradiated thorium is described. The method comprises forming a solution of neutron-irradiated thorium together with a manganous salt, then adding potassium permanganate to precipitate the manganese as manganese dioxide whereby protoactinium is carried down with the nnanganese dioxide dissolving the precipitate, adding a soluble zirconium salt, and adding phosphate ion to precipitate zirconium phosphate whereby protoactinium is then carried down with the zirconium phosphate to effect a further concentration.

  16. Probing Transition-Metal Silicides as PGM-Free Catalysts for Hydrogen Oxidation and Evolution in Acidic Medium

    PubMed Central

    Mittermeier, Thomas; Madkikar, Pankaj; Wang, Xiaodong; Gasteiger, Hubert A.; Piana, Michele

    2017-01-01

    In this experimental study, we investigate various transition-metal silicides as platinum-group-metal-(PGM)-free electrocatalysts for the hydrogen oxidation reaction (HOR), and for the hydrogen evolution reaction (HER) in acidic environment for the first time. Using cyclic voltammetry in 0.1 M HClO4, we first demonstrate that the tested materials exhibit sufficient stability against dissolution in the relevant potential window. Further, we determine the HOR and HER activities for Mo, W, Ta, Ni and Mo-Ni silicides in rotating disk electrode experiments. In conclusion, for the HOR only Ni2Si shows limited activity, and the HER activity of the investigated silicides is considerably lower compared to other PGM-free HER catalysts reported in the literature. PMID:28773022

  17. Silicon-germanium and platinum silicide nanostructures for silicon based photonics

    NASA Astrophysics Data System (ADS)

    Storozhevykh, M. S.; Dubkov, V. P.; Arapkina, L. V.; Chizh, K. V.; Mironov, S. A.; Chapnin, V. A.; Yuryev, V. A.

    2017-05-01

    This paper reports a study of two types of silicon based nanostructures prospective for applications in photonics. The first ones are Ge/Si(001) structures forming at room temperature and reconstructing after annealing at 600°C. Germanium, being deposited from a molecular beam at room temperature on the Si(001) surface, forms a thin granular film composed of Ge particles with sizes of a few nanometers. A characteristic feature of these films is that they demonstrate signs of the 2 x 1 structure in their RHEED patterns. After short-term annealing at 600°C under the closed system conditions, the granular films reconstruct to heterostructures consisting of a Ge wetting layer and oval clusters of Ge. A mixed type c(4x2) + p(2x2) reconstruction typical to the low-temperature MBE (Tgr < 600°C) forms on the wetting layer. Long-term annealing of granular films at the same conditions results in formation of c(4x2)-reconstructed wetting layer typical to high-temperature MBE (Tgr < 600°C) and huge clusters of Ge. The other type of the studied nanostructures is based on Pt silicides. This class of materials is one of the friendliest to silicon technology. But as silicide film thickness reaches a few nanometers, low resistivity becomes of primary importance. Pt3Si has the lowest sheet resistance among the Pt silicides. However, the development of a process of thin Pt3Si films formation is a challenging task. This paper describes formation of a thin Pt3Si/Pt2Si structures at room temperature on poly-Si films. Special attention is paid upon formation of poly-Si and amorphous Si films on Si3N4 substrates at low temperatures.

  18. X-ray photoemission spectromicroscopy of titanium silicide formation in patterned microstructures

    SciTech Connect

    Singh, S.; Solak, H.; Cerrina, F.

    1997-04-01

    Titanium silicide has the lowest resistivity of all the refractory metal silicides and has good thermal stability as well as excellent compatibility with Al metallization. It is used as an intermediate buffer layer between W vias and the Si substrate to provide good electrical contact in ULSI technology, whose submicron patterned features form the basis of the integrated circuits of today and tomorrow, in the self aligned silicide (salicide) formation process. TiSi{sub 2} exists in two phases: a metastable C49 base-centered orthorhombic phase with specific resistivity of 60-90 {mu}{Omega}-cm that is formed at a lower temperature (formation anneal) and the stable 12-15 {mu}{Omega}-cm resistivity face-centered orthorhombic C54 phase into which C49 is transformed with a higher temperature (conversion anneal) step. C54 is clearly the target for low resistivity VLSI interconnects. However, it has been observed that when dimensions shrink below 1/mic (or when the Ti thickness drops below several hundred angstroms), the transformation of C49 into C54 is inhibited and agglomeration often occurs in fine lines at high temperatures. This results in a rise in resistivity due to incomplete transformation to C54 and because of discontinuities in the interconnect line resulting from agglomeration. Spectromicroscopy is an appropriate tool to study the evolution of the TiSi2 formation process because of its high resolution chemical imaging ability which can detect bonding changes even in the absence of changes in the relative amounts of species and because of the capability of studying thick {open_quotes}as is{close_quotes} industrial samples.

  19. Combustion synthesis of molybdenum silicides and borosilicides for ultrahigh-temperature structural applications

    NASA Astrophysics Data System (ADS)

    Alam, Mohammad Shafiul

    Molybdenum silicides and borosilicides are promising structural materials for gas-turbine power plants. A major challenge, however, is to simultaneously achieve high oxidation resistance and acceptable mechanical properties at high temperatures. For example, molybdenum disilicide (MoSi2) has excellent oxidation resistance and poor mechanical properties, while Mo-rich silicides such as Mo5Si3 (called T 1) have much better mechanical properties but poor oxidation resistance. One approach is based on the fabrication of MoSi2-T 1 composites that combine high oxidation resistance of MoSi2 and good mechanical properties of T1. Another approach involves the addition of boron to Mo-rich silicides for improving their oxidation resistance through the formation of a borosilicate surface layer. In particular, Mo 5SiB2 (called T2) phase is considered as an attractive material. In the thesis, MoSi2-T1 composites and materials based on T2 phase are obtained by mechanically activated SHS. Use of SHS compaction (quasi-isostatic pressing) significantly improves oxidation resistance of the obtained MoSi2-T1 composites. Combustion of Mo-Si-B mixtures for the formation of T2 phase becomes possible if the composition is designed for the addition of more exothermic reactions leading to the formation of molybdenum boride. These mixtures exhibit spin combustion, the characteristics of which are in good agreement with the spin combustion theory. Oxidation resistance of the obtained Mo-Si-B materials is independent on the concentration of Mo phase in the products so that the materials with a higher Mo content are preferable because of better mechanical properties. Also, T2 phase has been obtained by the chemical oven combustion synthesis technique.

  20. Formation, optical properties, and electronic structure of thin Yb silicide films on Si(111)

    NASA Astrophysics Data System (ADS)

    Galkin, N. G.; Maslov, A. M.; Polyarnyi, V. O.

    2005-06-01

    Continuous very thin (2.5-3.0 nm) and thin (16-18 nm) ytterbium suicide films with some pinhole density (3×107- 1×108 cm-2) have been formed on Si(111) by solid phase epitaxy (SPE) and reactive deposition epitaxy (RDE) growth methods on templates. The stoichiometric ytterbium suicide (YbSi2) formation has shown in SPE grown films by AES and EELS data. Very thin Yb suicide films grown by RDE method had the silicon enrichment in YbSi2 suicide composition. The analysis of LEED data and AFM imaging has shown that ytterbium suicide films had non-oriented blocks with the polycrystalline structure. The analysis of scanning region length dependencies of the root mean square roughness deviation (σR(L)) for grown suicide films has shown that the formation of ytterbium suicide in SPE and RDE growth methods is determined by the surface diffusion of Yb atoms during the three-dimensional growth process. Optical functions (n, k, α, ɛ1, ɛ2, Im ɛ1-1, neff, ɛeff) of ytterbium silicide films grown on Si(1 1 1) have been calculated from transmittance and reflectance spectra in the energy range of 0.1-6.2 eV. Two nearly discrete absorption bands have been observed in the electronic structure of Yb silicide films with different composition, which connected with interband transitions on divalent and trivalent Yb states. It was established that the reflection coefficient minimum in R-spectra at energies higher 4.2 eV corresponds to the state density minimum in Yb suicide between divalent and trivalent Yb states. It was shown from optical data that Yb silicide films have the semi-metallic properties with low state densities at energies less 0.4 eV and high state densities at 0.5-2.5 eV.

  1. Planar chiral metamaterial design utilizing metal-silicides for giant circular dichroism and polarization rotation in the infrared region

    NASA Astrophysics Data System (ADS)

    Yan, Bo; Zhong, Kesong; Ma, Hongfeng; Li, Yun; Sui, Chenghua; Wang, Juanzhuan; Shi, Yi

    2017-01-01

    A planar chiral metamaterial (PCMM) comprizing double-layer sandwich structure utilizing metal-silicides in the shape of windmill is proposed in the infrared region (IR). Giant circular dichroism (CD) and polarization rotation are observed simultaneously. Furthermore, the effect of Drude model parameters (ωp,ωτ) of metal-silicides on CD and optical activity are also investigated. The results show that CD and optical activity reach maximum if ωp and ωτ are in the distribution of narrow trumpet shape.

  2. Optical response at 10.6 microns in tungsten silicide Schottky barrier diodes

    NASA Technical Reports Server (NTRS)

    Kumar, Sandeep; Boyd, Joseph T.; Jackson, Howard E.

    1987-01-01

    Optical response to radiation at a wavelength of 10.6 microns in tungsten silicide-silicon Schottky barrier diodes has been observed. Incident photons excite electrons by means of junction plasmon assisted inelastic electron tunneling. At 78 K, a peak in the second derivative of current versus junction bias voltage was observed at a voltage corresponding to the energy of photons having a wavelength of 10.6 microns. This peak increased with increasing incident laser power, saturating at the highest laser powers investigated.

  3. In situ integration of freestanding zinc oxide nanorods using copper silicide nanobeams

    NASA Astrophysics Data System (ADS)

    Kumar, Nitin; Parajuli, Omkar; Hahm, Jong-in

    2007-10-01

    In this letter, we describe an in situ integration method to produce freestanding zinc oxide nanorods (ZnO NRs) on copper silicide nanobeams (Cu3Si NBs). The integration of ZnO NRs with Cu3Si NBs is straightforwardly achieved immediately after ZnO NR synthesis by exploiting self-assembled Cu3Si NBs as catalysts. The resulting ZnO NRs on Cu3Si NBs exhibit atomic defect-free structures with superb optical quality which, in turn, can be beneficial when applied in micro- and nanoelectromechanical systems.

  4. Microalloying of transition metal silicides by mechanical activation and field-activated reaction

    DOEpatents

    Munir, Zuhair A.; Woolman, Joseph N.; Petrovic, John J.

    2003-09-02

    Alloys of transition metal suicides that contain one or more alloying elements are fabricated by a two-stage process involving mechanical activation as the first stage and densification and field-activated reaction as the second stage. Mechanical activation, preferably performed by high-energy planetary milling, results in the incorporation of atoms of the alloying element(s) into the crystal lattice of the transition metal, while the densification and field-activated reaction, preferably performed by spark plasma sintering, result in the formation of the alloyed transition metal silicide. Among the many advantages of the process are its ability to accommodate materials that are incompatible in other alloying methods.

  5. On the structural and electronic properties of Ir-silicide nanowires on Si(001) surface

    SciTech Connect

    Fatima,; Hossain, Sehtab; Mohottige, Rasika; Oncel, Nuri E-mail: nuri.oncel@und.edu; Can Oguz, Ismail; Gulseren, Oguz E-mail: nuri.oncel@und.edu; Çakır, Deniz

    2016-09-07

    Iridium (Ir) modified Silicon (Si) (001) surface is studied with Scanning Tunneling Microscopy/Spectroscopy (STM/STS) and Density Functional Theory (DFT). A model for Ir-silicide nanowires based on STM images and ab-initio calculations is proposed. According to our model, the Ir adatom is on the top of the substrate dimer row and directly binds to the dimer atoms. I-V curves measured at 77 K shows that the nanowires are metallic. DFT calculations confirm strong metallic nature of the nanowires.

  6. Ferromagnetic nickel silicide nanowires for isolating primary CD4+ T lymphocytes

    NASA Astrophysics Data System (ADS)

    Kim, Dong-Joo; Seol, Jin-Kyeong; Lee, Mi-Ri; Hyung, Jung-Hwan; Kim, Gil-Sung; Ohgai, Takeshi; Lee, Sang-Kwon

    2012-04-01

    Direct CD4+ T lymphocytes were separated from whole mouse splenocytes using 1-dimensional ferromagnetic nickel silicide nanowires (NiSi NWs). NiSi NWs were prepared by silver-assisted wet chemical etching of silicon and subsequent deposition and annealing of Ni. This method exhibits a separation efficiency of ˜93.5%, which is comparable to that of the state-of-the-art superparamagnetic bead-based cell capture (˜96.8%). Furthermore, this research shows potential for separation of other lymphocytes, B, natural killer and natural killer T cells, and even rare tumor cells simply by changing the biotin-conjugated antibodies.

  7. The effect of fabrication variables on the irradiation performance of uranium silicide dispersion fuel plates

    SciTech Connect

    Hofman, G.L.; Neimark, L.A.; Olquin, F.L.

    1986-11-01

    The effect of fabrication variables on the irradiation behavior of uranium silicide-aluminum dispersion fuel plates is examined. The presence of minor amounts of metallic uranium-silicon was found to have no detrimental effect, so that extensive annealing to remove this phase appears unnecessary. Uniform fuel dispersant loading, low temperature during plate rolling, and cold-worked metallurgical condition of the fuel plates all result in a higher burnup threshold for breakaway swelling in highly-loaded U/sub 3/Si fueled plates.

  8. Modeling, fabrication, and characterization of tungsten silicide wire-grid polarizer in infrared region.

    PubMed

    Yamada, Itsunari; Nishii, Junji; Saito, Mitsunori

    2008-09-10

    We designed and fabricated a tungsten silicide wire-grid polarizer. To examine its polarization characteristics, the transmission spectra of the polarizer were simulated using the effective medium theory. The polarizer was fabricated based on the simulation results. The transverse magnetic (TM) polarization transmittance of the fabricated polarizer was greater than 50% over the 5 mum wavelength, and the ratio of TM and transverse electric transmittance was greater than 100 (20 dB) in the infrared range. This fabricated polarizer has higher durability and better compatibility with microfabrication processes than conventional infrared polarizers.

  9. On the structural and electronic properties of Ir-silicide nanowires on Si(001) surface

    NASA Astrophysics Data System (ADS)

    Fatima, Can Oguz, Ismail; ćakır, Deniz; Hossain, Sehtab; Mohottige, Rasika; Gulseren, Oguz; Oncel, Nuri

    2016-09-01

    Iridium (Ir) modified Silicon (Si) (001) surface is studied with Scanning Tunneling Microscopy/Spectroscopy (STM/STS) and Density Functional Theory (DFT). A model for Ir-silicide nanowires based on STM images and ab-initio calculations is proposed. According to our model, the Ir adatom is on the top of the substrate dimer row and directly binds to the dimer atoms. I-V curves measured at 77 K shows that the nanowires are metallic. DFT calculations confirm strong metallic nature of the nanowires.

  10. Synthesis, characterization, optical and sensing property of manganese oxide nanoparticles

    SciTech Connect

    Manigandan, R.; Suresh, R.; Giribabu, K.; Narayanan, V.; Vijayalakshmi, L.; Stephen, A.

    2014-01-28

    Manganese oxide nanoparticles were prepared by thermal decomposition of manganese oxalate. Manganese oxalate was synthesized by reacting 1:1 mole ratio of manganese acetate and ammonium oxalate along with sodium dodecyl sulfate (SDS). The structural characterization of manganese oxalate and manganese oxide nanoparticles was analyzed by XRD. The XRD spectrum confirms the crystal structure of the manganese oxide and manganese oxalate. In addition, the average grain size, lattice parameter values were also calculated using XRD spectrum. Moreover, the diffraction peaks were broadened due to the smaller size of the particle. The band gap of manganese oxide was calculated from optical absorption, which was carried out by DRS UV-Visible spectroscopy. The morphology of manganese oxide nanoparticles was analyzed by SEM images. The FT-IR analysis confirms the formation of the manganese oxide from manganese oxalate nanoparticles. The electrochemical sensing behavior of manganese oxide nanoparticles were investigated using hydrogen peroxide by cyclic voltammetry.

  11. Synthesis, characterization, optical and sensing property of manganese oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Manigandan, R.; Suresh, R.; Giribabu, K.; Vijayalakshmi, L.; Stephen, A.; Narayanan, V.

    2014-01-01

    Manganese oxide nanoparticles were prepared by thermal decomposition of manganese oxalate. Manganese oxalate was synthesized by reacting 1:1 mole ratio of manganese acetate and ammonium oxalate along with sodium dodecyl sulfate (SDS). The structural characterization of manganese oxalate and manganese oxide nanoparticles was analyzed by XRD. The XRD spectrum confirms the crystal structure of the manganese oxide and manganese oxalate. In addition, the average grain size, lattice parameter values were also calculated using XRD spectrum. Moreover, the diffraction peaks were broadened due to the smaller size of the particle. The band gap of manganese oxide was calculated from optical absorption, which was carried out by DRS UV-Visible spectroscopy. The morphology of manganese oxide nanoparticles was analyzed by SEM images. The FT-IR analysis confirms the formation of the manganese oxide from manganese oxalate nanoparticles. The electrochemical sensing behavior of manganese oxide nanoparticles were investigated using hydrogen peroxide by cyclic voltammetry.

  12. Self-aligned silicides for Ohmic contacts in complementary metal-oxide-semiconductor technology: TiSi2, CoSi2, and NiSi

    NASA Astrophysics Data System (ADS)

    Zhang, S.-L.; Smith, U.

    2004-07-01

    Metal silicides continue to play an indispensable role during the remarkable development of microelectronics. Along with several other technological innovations, the implementation of the self-aligned silicide technology paved the way for a rapid and successful miniaturization of device dimensions for metal-oxide-semiconductor field-effect transistors (MOSFETs) in pace with the Moore's law. The use of silicides has also evolved from creating reliable contacts for diodes, to generating high-conductivity current paths for local wiring, and lately to forming low-resistivity electrical contacts for MOSFETs. With respect to the choice of silicides for complementary metal-oxide-semiconductor (CMOS) technology, a convergence has become clear with the self-alignment technology using only a limited number of silicides, namely TiSi2, CoSi2, and NiSi. The present work discusses the advantages and limitations of TiSi2, CoSi2, and NiSi using the development trend of CMOS technology as a measure. Specifically, the reactive diffusion and phase formation of these silicides in the three terminals of a MOSFET, i.e., gate, source, and drain, are analyzed. This work ends with a brief discussion about future trends of metal silicides in micro/nanoelectronics with reference to potential material aspects and device structures outlined in the International Technology Roadmap for Semiconductors. .

  13. Soluble manganese removal by porous media filtration.

    PubMed

    Kim, J; Jung, S

    2008-12-01

    Filtration experiments were conducted to investigate soluble manganese removal in granular media filtration; sand, manganese oxide coated sand (MOCS), sand + MOCS (1:1) and granular activated carbon (GAC) were used as filter media. Manganese removal, manganese oxide accumulation, turbidity removal, and regeneration of MOCS under various conditions were examined. Soluble manganese removal by the MOCS column was rapid and efficient; most of the removal happened at the top (e.g. 5 cm) of the filter. When filter influent with an average manganese concentration of 0.204 mg l(-1) was fed through the filter columns, the sand + MOCS and MOCS columns removed 98.9% and 99.2% of manganese, respectively. However, manganese removal in sand and the GAC columns was not significant during the initial stage of filtration, but after eight months of filter run they could remove 99% and 35% of manganese, respectively. It was revealed that partial replacement of sand with MOCS showed comparable manganese removal to that of the MOCS filter media.

  14. Preliminary investigations on the use of uranium silicide targets for fission Mo-99 production

    SciTech Connect

    Cols, H.; Cristini, P.; Marques, R.

    1997-08-01

    The National Atomic Energy Commission (CNEA) of Argentine Republic owns and operates an installation for production of molybdenum-99 from fission products since 1985, and, since 1991, covers the whole national demand of this nuclide, carrying out a program of weekly productions, achieving an average activity of 13 terabecquerel per week. At present they are finishing an enlargement of the production plant that will allow an increase in the volume of production to about one hundred of terabecquerel. Irradiation targets are uranium/aluminium alloy with 90% enriched uranium with aluminium cladding. In view of international trends held at present for replacing high enrichment uranium (HEU) for enrichment values lower than 20 % (LEU), since 1990 the authors are in contact with the RERTR program, beginning with tests to adapt their separation process to new irradiation target conditions. Uranium silicide (U{sub 3}Si{sub 2}) was chosen as the testing material, because it has an uranium mass per volume unit, so that it allows to reduce enrichment to a value of 20%. CNEA has the technology for manufacturing miniplates of uranium silicide for their purposes. In this way, equivalent amounts of Molybdenum-99 could be obtained with no substantial changes in target parameters and irradiation conditions established for the current process with Al/U alloy. This paper shows results achieved on the use of this new target.

  15. Uranium silicide pellet fabrication by powder metallurgy for accident tolerant fuel evaluation and irradiation

    SciTech Connect

    Harp, Jason Michael; Lessing, Paul Alan; Hoggan, Rita Elaine

    2015-06-21

    In collaboration with industry, Idaho National Laboratory is investigating uranium silicide for use in future light water reactor fuels as a more accident resistant alternative to uranium oxide base fuels. Specifically this project was focused on producing uranium silicide (U3Si2) pellets by conventional powder metallurgy with a density greater than 94% of the theoretical density. This work has produced a process to consistently produce pellets with the desired density through careful optimization of the process. Milling of the U3Si2 has been optimized and high phase purity U3Si2 has been successfully produced. Results are presented from sintering studies and microstructural examinations that illustrate the need for a finely ground reproducible particle size distribution in the source powder. The optimized process was used to produce pellets for the Accident Tolerant Fuel-1 irradiation experiment. The average density of these pellets was 11.54 ±0.06 g/cm3. Additional characterization of the pellets by scaning electron microscopy and X-ray diffraction has also been performed. As a result, pellets produced in this work have been encapsulated for irradiation, and irradiation in the Advanced Test Reactor is expected soon.

  16. Uranium silicide pellet fabrication by powder metallurgy for accident tolerant fuel evaluation and irradiation

    DOE PAGES

    Harp, Jason Michael; Lessing, Paul Alan; Hoggan, Rita Elaine

    2015-06-21

    In collaboration with industry, Idaho National Laboratory is investigating uranium silicide for use in future light water reactor fuels as a more accident resistant alternative to uranium oxide base fuels. Specifically this project was focused on producing uranium silicide (U3Si2) pellets by conventional powder metallurgy with a density greater than 94% of the theoretical density. This work has produced a process to consistently produce pellets with the desired density through careful optimization of the process. Milling of the U3Si2 has been optimized and high phase purity U3Si2 has been successfully produced. Results are presented from sintering studies and microstructural examinationsmore » that illustrate the need for a finely ground reproducible particle size distribution in the source powder. The optimized process was used to produce pellets for the Accident Tolerant Fuel-1 irradiation experiment. The average density of these pellets was 11.54 ±0.06 g/cm3. Additional characterization of the pellets by scaning electron microscopy and X-ray diffraction has also been performed. As a result, pellets produced in this work have been encapsulated for irradiation, and irradiation in the Advanced Test Reactor is expected soon.« less

  17. Uranium silicide pellet fabrication by powder metallurgy for accident tolerant fuel evaluation and irradiation

    NASA Astrophysics Data System (ADS)

    Harp, Jason M.; Lessing, Paul A.; Hoggan, Rita E.

    2015-11-01

    In collaboration with industry, Idaho National Laboratory is investigating uranium silicide for use in future light water reactor fuels as a more accident resistant alternative to uranium oxide base fuels. Specifically this project was focused on producing uranium silicide (U3Si2) pellets by conventional powder metallurgy with a density greater than 94% of the theoretical density. This work has produced a process to consistently produce pellets with the desired density through careful optimization of the process. Milling of the U3Si2 has been optimized and high phase purity U3Si2 has been successfully produced. Results are presented from sintering studies and microstructural examinations that illustrate the need for a finely ground reproducible particle size distribution in the source powder. The optimized process was used to produce pellets for the Accident Tolerant Fuel-1 irradiation experiment. The average density of these pellets was 11.54 ± 0.06 g/cm3. Additional characterization of the pellets by scanning electron microscopy and X-ray diffraction has also been performed. Pellets produced in this work have been encapsulated for irradiation, and irradiation in the Advanced Test Reactor is expected soon.

  18. Geometry-dependent phase, stress state and electrical properties in nickel-silicide nanowires

    NASA Astrophysics Data System (ADS)

    Wang, C. C.; Lai, W. T.; Hsiao, Y. Y.; Chen, I. H.; George, T.; Li, P. W.

    2016-05-01

    We report that the geometry of single-crystalline Si nanowires (NWs) prior to salicidation at 500 °C is the key factor controlling the phase, stress state, and electrical resistivity of the resulting Ni x Si y NWs of width less than 100 nm. This is a radical departure from previous observations of a single phase formation for nickel silicides generated from the silicidation of bulk Si substrates. The phase transition from NiSi for large NWs ( W Si NW  =  250-450 nm) to Ni2Si for small NWs ( W Si NW  =  70-100 nm) is well correlated with the observed volumetric expansion and electrical resistivity variation with the NW width. For the extremely small dimensions of Ni x Si y NWs, we propose that the preeminent, kinetics-based Zhang and d’Heurle model for salicidation be modified to a more thermodynamically-governed, volume-expansion dependent Ni x Si y phase formation. A novel, plastic deformation mechanism is proposed to explain the observed, geometry-dependent Ni x Si y NW phase formation that also strongly influences the electrical performance of the NWs.

  19. Plasma-enhanced etching of tungsten, tungsten silicide, and molybdenum in chlorine-containing discharges

    SciTech Connect

    Fischl, D.S.

    1988-01-01

    Thin films of tungsten, tungsten silicide, and molybdenum were etched both within and downstream from Cl{sub 2} discharges. Without a discharge, molecular chlorine did not etch the films. Experimental conditions ranged from 0.1 to 1.0 Torr pressure, 30 to 180{degree}C electrode temperature, 0.2 to 1.0 W/cm{sup 2} power density, and 3 to 200 sccm flow rate. In-discharge etch rates varied from 10 to 90 nm/min for tungsten (W), 10 to 450 nm/min for tungsten silicide (WSi{sub x}), and 1 to 8 nm/min for molybdenum (Mo). Small additions of BCl{sub 3}, during W and WSi{sub x} etching, significantly increased the etch rates and improved the reproducibility. When samples were positioned downstream from a Cl{sub 2} discharge, etching proceeded solely by chemical reaction of the film with chlorine atoms. Downstream and in-plasma tungsten etch rates were approximately equal at 110{degree}C, but the chlorine atom etch rate dropped more rapidly than the in-plasma etch rate as temperature decreased. In contrast, molybdenum etched faster by atoms alone than in the plasma, although atom etching was not observed below 100{degree}C. Reactions of tungsten with a modulated beam of chlorine atoms and molecules were also studied.

  20. Kinetics of silicide formation over a wide range of heating rates spanning six orders of magnitude

    SciTech Connect

    Molina-Ruiz, Manel; Lopeandía, Aitor F.; Gonzalez-Silveira, Marta; Garcia, Gemma; Clavaguera-Mora, Maria T.; Peral, Inma; Rodríguez-Viejo, Javier

    2014-07-07

    Kinetic processes involving intermediate phase formation are often assumed to follow an Arrhenius temperature dependence. This behavior is usually inferred from limited data over narrow temperature intervals, where the exponential dependence is generally fully satisfied. However, direct evidence over wide temperature intervals is experimentally challenging and data are scarce. Here, we report a study of silicide formation between a 12 nm film of palladium and 15 nm of amorphous silicon in a wide range of heating rates, spanning six orders of magnitude, from 0.1 to 10{sup 5 }K/s, or equivalently more than 300 K of variation in reaction temperature. The calorimetric traces exhibit several distinct exothermic events related to interdiffusion, nucleation of Pd{sub 2}Si, crystallization of amorphous silicon, and vertical growth of Pd{sub 2}Si. Interestingly, the thickness of the initial nucleation layer depends on the heating rate revealing enhanced mass diffusion at the fastest heating rates during the initial stages of the reaction. In spite of this, the formation of the silicide strictly follows an Arrhenius temperature dependence over the whole temperature interval explored. A kinetic model is used to fit the calorimetric data over the complete heating rate range. Calorimetry is complemented by structural analysis through transmission electron microscopy and both standard and in-situ synchrotron X-ray diffraction.

  1. Study of copper silicide retardation effects on copper diffusion in silicon

    NASA Astrophysics Data System (ADS)

    Lee, C. S.; Gong, H.; Liu, R.; Wee, A. T. S.; Cha, C. L.; See, A.; Chan, L.

    2001-10-01

    A B-buried layer with a dose of 1×1014atoms/cm2 was introduced into p-doped Si at a depth of 2.2 μm to enhance copper diffusion via its inherent gettering effect. Copper was then introduced into silicon either via a low-energy implantation followed by a thermal anneal, or through the thermal drive in of physical vapor deposited (PVD) copper film. Secondary ion mass spectrometry depth profiling of both annealed samples later indicated that while substantial amounts of copper was gettered by the B layer in the former sample, no copper was gettered by the B-buried layer in the latter sample. Further analysis with an x-ray diffraction technique showed that copper silicide, Cu3Si was formed in the latter sample. It is thus surmised that the formation of this silicide layer impeded the diffusion of copper towards the B-buried layer. This work investigates the cause of CuSix formation and the underlying reasons for the lower mobility of Cu in PVD Cu film samples.

  2. Facile Preparation of a Platinum Silicide Nanoparticle-Modified Tip Apex for Scanning Kelvin Probe Microscopy

    NASA Astrophysics Data System (ADS)

    Lin, Chun-Ting; Chen, Yu-Wei; Su, James; Wu, Chien-Ting; Hsiao, Chien-Nan; Shiao, Ming-Hua; Chang, Mao-Nan

    2015-10-01

    In this study, we propose an ultra-facile approach to prepare a platinum silicide nanoparticle-modified tip apex (PSM tip) used for scanning Kelvin probe microscopy (SKPM). We combined a localized fluoride-assisted galvanic replacement reaction (LFAGRR) and atmospheric microwave annealing (AMA) to deposit a single platinum silicide nanoparticle with a diameter of 32 nm on the apex of a bare silicon tip of atomic force microscopy (AFM). The total process was completed in an ambient environment in less than 3 min. The improved potential resolution in the SKPM measurement was verified. Moreover, the resolution of the topography is comparable to that of a bare silicon tip. In addition, the negative charges found on the PSM tips suggest the possibility of exploring the use of current PSM tips to sense electric fields more precisely. The ultra-fast and cost-effective preparation of the PSM tips provides a new direction for the preparation of functional tips for scanning probe microscopy.

  3. Rare Earth Metal Silicides Synthesized by High Current Metal Ion Implantation

    NASA Astrophysics Data System (ADS)

    Cheng, X. Q.; Wang, R. S.; Tang, X. J.; Liu, B. X.

    2003-08-01

    The YSi2, LaSi2, CeSi2, PrSi2, NdSi2, SmSi2, GdSi2, TbSi2, DySi2, and ErSi2 layers were formed on Si wafers by respective high current metal-ion implantation using a metal vacuum vapor arc (MEVVA) ion source and the formation temperature was considerable lower than the critical temperatures (300-350°C) required for the rare earth metal silicides by solid-state reaction. It was found that the crystalline structures could be improved with increasing slightly the formation temperature as well as the implantation dose. Concerning the growth kinetics, in some cases, fractal patterns were observed on Si surfaces and the branches of the fractals consisted of the grains of respective precipitated silicides. Interestingly, the fractal dimension increased with formation temperature and eventually approached to a value of 2.0, corresponding to a continuous layer, which was required in practical application. The formation mechanism as well as the growth kinetics was discussed in terms of the far-from-equilibrium process involved in the MEVVA ion implantation.

  4. Mitigation of interfacial silicide reactions for electroplated CoPt films on Si substrates

    NASA Astrophysics Data System (ADS)

    Oniku, Ololade D.; Arnold, David P.

    2015-12-01

    We report in this paper the influence of film thickness on the material and magnetic properties of electroplated CoPt permanent magnets. Layers of CoPt magnets with film thicknesses ranging from 0.5 μm to 5 μm are deposited into photoresist molds (3.5 mm x 3.5 mm square and 5 μm x 50 μm arrays) on a (100)Si substrate coated with 10 nm/100 nm Ti/Cu adhesion/seed layer. Results show an unexpected reduction in magnetic properties for films below 2 μm thick. This effect is determined to be a consequence of metal-silicide reactions at the substrate interface during annealing leading to the formation of a non-magnetic layer at the interface. Subsequently, a TiN diffusion-barrier layer is added to inhibit the silicide reaction and thereby maintain strong magnetic properties (Hci ∼800 kA/m, Mr/Ms = 0.8) in micron- thick electroplated CoPt layers.

  5. Crystal structure of the ternary silicide Gd2Re3Si5.

    PubMed

    Fedyna, Vitaliia; Kozak, Roksolana; Gladyshevskii, Roman

    2014-12-01

    A single crystal of the title compound, the ternary silicide digadolinium trirhenium penta-silicide, Gd2Re3Si5, was isolated from an alloy of nominal composition Gd20Re30Si50 synthesized by arc melting and investigated by X-ray single-crystal diffraction. Its crystal structure belongs to the U2Mn3Si5 structure type. All atoms in the asymmetric lie on special positions. The Gd site has site symmetry m..; the two Mn atoms have site symmetries m.. and 2.22; the three Si atoms have site symmetries m.., ..2 and 4.. . The coordination polyhedra of the Gd atoms have 21 vertices, while those of the Re atoms are cubo-octa-hedra and 13-vertex polyhedra. The Si atoms are arranged as tricapped trigonal prisms, bicapped square anti-prisms, or 11-vertex polyhedra. The crystal structure of the title compound is also related to the structure types CaBe2Ge2 and W5Si3. It can be represented as a stacking of Gd-centred polyhedra of composition [GdSi9]. The Re atoms form infinite chains with an Re-Re distance of 2.78163 (5) Å and isolated squares with an Re-Re distance of 2.9683 (6) Å.

  6. Kinetic analysis of the combustion synthesis of molybdenum and titanium silicides

    NASA Astrophysics Data System (ADS)

    Wang, Lily L.; Munir, Z. A.

    1995-05-01

    The temperature profiles associated with the passage of self-propagating combustion waves during the synthesis of MoSi2 and Ti5Si3 were determined. From these profiles, kinetic analyses of the combustion synthesis process for these two silicides were made. The synthesis is associated with high heating rates: 1.3 × 104 and 4.9 × 104 K·s-1 for MoSi2 and Ti5Si3, respectively. The width of the combustion zone was determined as 1.3 and 1.8 mm for the silicides of Mo and Ti, respectively. The degree of conversion, η, and its spatial distribution and the conversion rate, ∂η/∂t, were determined. However, because of the inherent characteristics of wave propagation in MoSi2, only in the case of Ti5Si3 could the activation energy be calculated. An average value of 190 kJ µ mol-1 was determined for titanium suicide.

  7. Plasma-enhanced deposition and processing of transition metals and transition metal silicides for VLSI

    NASA Astrophysics Data System (ADS)

    Hess, D. W.

    1986-05-01

    Radiofrequency (rf) discharges have been used to deposit films of tungsten, molybdenum and titanium silicide. As-deposited tungsten films, from tungsten hexafluoride and hydrogen source gases, were metastable (beta W), with significant (>1 atomic percent) fluorine incorporation. Film resistivities were 40-55 micro ohm - cm due to the beta W, but dropped to about 8 micro ohm cm after a short heat treatment at 700 C which resulted in a phase transition to alpha W (bcc form). The high resistivity (>10,000 micro ohm) associated with molybdenum films deposited from molybdenum hexafluoride and hydrogen appeared to be a result of the formation of molybdenum trifluoride in the deposited material. Titanium silicide films formed from a discharge of titanium tetrachloride, silane, and hydrogen, displayed resistivities of about 150 micro ohm cm, due to small amounts of oxygen and chlorine incorporated during deposition. Plasma etching studies of tungsten films with fluorine containing gases suggest that the etchant species for tungsten in these discharges are fluorine atoms.

  8. Study of temperature dependent zirconium silicide phases in Zr/Si structure by differential scanning calorimetry

    NASA Astrophysics Data System (ADS)

    Faruque, Sk Abdul Kader Md; Ranjan Bhattachryya, Satya; Sinha, Anil Kumar; Chakraborty, Supratic

    2016-02-01

    The differential scanning calorimetry (DSC) technique is employed to study the formation of different silicide compounds of Zr thin-film deposited on a 100 μm-thick Si (1 0 0) substrate by dc sputtering. A detailed analysis shows that silicide layers start growing at  ∼246 °C that changes to stable ZrSi2 at 627 °C via some compounds with different stoichiometric ratios of Zr and Si. It is further observed that oxygen starts reacting with Zr at  ∼540 °C but a stoichiometric ZrO2 film is formed after complete consumption of Zr metal at 857 °C. A further rise in temperature changes a part of ZrSi2 to Zr-Silicate. The synchrotron radiation-based grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy studies also corroborate the above findings. Atomic force microscopy is also carried out on the samples. It is evident from the observations that an intermixing and nucleation of Zr and Si occur at lower temperature prior to the formation of the interfacial silicate layer. Zr-Silicate formation takes place only at a higher temperature.

  9. Absorption enhancement in amorphous silicon thin films via plasmonic resonances in nickel silicide nanoparticles

    NASA Astrophysics Data System (ADS)

    Hachtel, Jordan; Shen, Xiao; Pantelides, Sokrates; Sachan, Ritesh; Gonzalez, Carlos; Dyck, Ondrej; Fu, Shaofang; Kalnayaraman, Ramki; Rack, Phillip; Duscher, Gerd

    2013-03-01

    Silicon is a near ideal material for photovoltaics due to its low cost, abundance, and well documented optical properties. The sole detriment of Si in photovoltaics is poor absorption in the infrared. Nanoparticle surface plasmon resonances are predicted to increase absorption by scattering to angles greater than the critical angle for total internal reflection (16° for a Si/air interface), trapping the light in the film. Experiments confirm that nickel silicide nanoparticles embedded in amorphous silicon increases absorption significantly in the infrared. However, it remains to be seen if electron-hole pair generation is increased in the solar cell, or whether the light is absorbed by the nanoparticles themselves. The nature of the absorption is explored by a study of the surface plasmon resonances through electron energy loss spectrometry and scanning transmission electron microscopy experiments, as well as first principles density functional theory calculations. Initial experimental results do not show strong plasmon resonances on the nanoparticle surfaces. Calculations of the optical properties of the nickel silicide particles in amorphous silicon are performed to understand why this resonance is suppressed. Work supported by NSF EPS 1004083 (TN-SCORE).

  10. Interfacial structure of two-dimensional epitaxial Er silicide on Si(111)

    NASA Astrophysics Data System (ADS)

    Tuilier, M. H.; Wetzel, P.; Pirri, C.; Bolmont, D.; Gewinner, G.

    1994-07-01

    Auger-electron diffraction (AED) and surface-extended x-ray-absorption fine structure (SEXAFS) have been used to obtain a complete description of the atomic structure of a two-dimensional epitaxial Er silicide layer on Si(111). AED reveals that a monolayer of Er is located underneath a buckled Si double layer. The relevant Er-Si interlayer spacings are determined by means of single scattering cluster simulations and a R-factor analysis to be 1.92+/-0.05 Å to the first and 2.70+/-0.05 Å to the second Si top layer. Er near-neighbor bond lengths and coordination numbers are obtained independently from polarization-dependent SEXAFS. The SEXAFS data, when combined with the Si top-layer geometry inferred from AED, permit the determination of the atomic positions at the silicide/Si(111) interface. The Er is found to reside in relaxed T4 sites of Si(111) with a single Er-Si distance of 3.09+/-0.04 Å to the first- and second-layer Si atoms of the substrate.

  11. Ultra-low Contact Resistivity of PtHf Silicide Utilizing Dopant Segregation Process

    NASA Astrophysics Data System (ADS)

    Ohmi, Shun-ichiro; Chen, Mengyi; Masahiro, Yasushi

    2016-12-01

    We investigated the dopant segregation (DS) process for PtHf silicide to realize low contact resistivity. After the patterning of SiO2 hard mask and heavily doped n+ diffusion region formation on p-Si(100) substrates, 20 nm-thick PtHf-alloy thin film with 10 nm-thick HfN encapsulating layer was deposited in situ utilizing a PtHf-alloy target by RF magnetron sputtering at room temperature. Then, PH3 ion implantation was carried out for DS followed by silicidation at 450-500°C/5-60 min in N2/4.9%H2 ambient. After Al electrode formation, a sintering process was carried out at 400°C/20 min in N2/4.9%H2 ambient. Ultra-low contact resistivity was achieved for fabricated PtHSi with a DS process on the order of 2.5 × 10-8 Ω cm2 evaluated by the cross-bridge Kelvin resistor method.

  12. "Nanoparticle-in-alloy" approach to efficient thermoelectrics: silicides in SiGe.

    PubMed

    Mingo, N; Hauser, D; Kobayashi, N P; Plissonnier, M; Shakouri, A

    2009-02-01

    We present a "nanoparticle-in-alloy" material approach with silicide and germanide fillers leading to a potential 5-fold increase in the thermoelectric figure of merit of SiGe alloys at room temperature and 2.5 times increase at 900 K. Strong reductions in computed thermal conductivity are obtained for 17 different types of silicide nanoparticles. We predict the existence of an optimal nanoparticle size that minimizes the nanocomposite's thermal conductivity. This thermal conductivity reduction is much stronger and strikingly less sensitive to nanoparticle size for an alloy matrix than for a single crystal one. At the same time, nanoparticles do not negatively affect the electronic conduction properties of the alloy. The proposed material can be monolithically integrated into Si technology, enabling an unprecedented potential for micro refrigeration on a chip. High figure-of-merit at high temperatures (ZT approximately 1.7 at 900 K) opens up new opportunities for thermoelectric power generation and waste heat recovery at large scale.

  13. Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts.

    PubMed

    Habicht, S; Zhao, Q T; Feste, S F; Knoll, L; Trellenkamp, S; Ghyselen, B; Mantl, S

    2010-03-12

    We present electrical characterization of nickel monosilicide (NiSi) contacts formed on strained and unstrained silicon nanowires (NWs), which were fabricated by top-down processing of initially As(+) implanted and activated strained and unstrained silicon-on-insulator (SOI) substrates. The resistivity of doped Si NWs and the contact resistivity of the NiSi to Si NW contacts are studied as functions of the As(+) ion implantation dose and the cross-sectional area of the wires. Strained silicon NWs show lower resistivity for all doping concentrations due to their enhanced electron mobility compared to the unstrained case. An increase in resistivity with decreasing cross section of the NWs was observed for all implantation doses. This is ascribed to the occurrence of dopant deactivation. Comparing the silicidation of uniaxially tensile strained and unstrained Si NWs shows no difference in silicidation speed and in contact resistivity between NiSi/Si NW. Contact resistivities as low as 1.2 x 10(-8) Omega cm(-2) were obtained for NiSi contacts to both strained and unstrained Si NWs. Compared to planar contacts, the NiSi/Si NW contact resistivity is two orders of magnitude lower.

  14. Organometallic halide perovskite/barium di-silicide thin-film double-junction solar cells

    NASA Astrophysics Data System (ADS)

    Vismara, R.; Isabella, O.; Zeman, M.

    2016-04-01

    Barium di-silicide (BaSi2) is an abundant and inexpensive semiconductor with appealing opto-electrical properties. In this work we show that a 2-μm thick BaSi2-based thin-film solar cell can exhibit an implied photo-current density equal to 41.1 mA/cm2, which is higher than that of a state-of-the-art wafer-based c-Si hetero-junction solar cell. This performance makes BaSi2 an attractive absorber for high-performing thin-film and multi-junction solar cells. In particular, to assess the potential of barium di-silicide, we propose a thin-film double-junction solar cell based on organometallic halide perovskite (CH3NH3PbI3) as top absorber and BaSi2 as bottom absorber. The resulting modelled ultra-thin double-junction CH3NH3PbI3 / BaSi2 (< 2 μm) exhibits an implied total photo-current density equal to 38.65 mA/cm2 (19.84 mA/cm2 top cell, 18.81 mA/cm2 bottom cell) and conversion efficiencies up to 28%.

  15. Fabrication of Ni-silicide/Si heterostructured nanowire arrays by glancing angle deposition and solid state reaction

    PubMed Central

    2013-01-01

    This work develops a method for growing Ni-silicide/Si heterostructured nanowire arrays by glancing angle Ni deposition and solid state reaction on ordered Si nanowire arrays. Samples of ordered Si nanowire arrays were fabricated by nanosphere lithography and metal-induced catalytic etching. Glancing angle Ni deposition deposited Ni only on the top of Si nanowires. When the annealing temperature was 500°C, a Ni3Si2 phase was formed at the apex of the nanowires. The phase of silicide at the Ni-silicide/Si interface depended on the diameter of the Si nanowires, such that epitaxial NiSi2 with a {111} facet was formed at the Ni-silicide/Si interface in Si nanowires with large diameter, and NiSi was formed in Si nanowires with small diameter. A mechanism that is based on flux divergence and a nucleation-limited reaction is proposed to explain this phenomenon of size-dependent phase formation. PMID:23663726

  16. Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology.

    PubMed

    Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

    2015-12-03

    This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm(2), and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p(+-)n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

  17. Thermal compatibility studies of unirradiated uranium silicide dispersed in aluminum. [Reduced Enrichment for Research and Test Reactor

    SciTech Connect

    Wiencek, T.C.; Domagala, R.F.; Thresh, H.R.

    1984-09-01

    Powder metallurgy dispersions of uranium silicides in an aluminum matrix have been developed by the international Reduced Enrichment for Research and Test Reactors program as a new generation of proliferation-resistant fuels. A major issue of concern is the compatibility of the fuel with the matrix material and the dimensional stability of this fuel type. A total of 45 miniplate-type fuel plates were annealed at 400/sup 0/C for up to 1981 hours. A data base for the thermal compatibility of unirradiated uranium silicide dispersed in aluminum was established. No modification tested of a standard fuel plate showed any significant reduction of the plate swelling. The cause of the thermal growth of silicide fuel plates was determined to be a two-step process: (1) the reaction of the uranium silicide with aluminum to form U(AlSi)/sub 3/ and (2) the release of hydrogen and subsequent creep and pillowing of the fuel plate. 9 references, 4 figures, 6 tables.

  18. Shallow-junction diode formation by implantation of arsenic and boron through titanium-silicide films and rapid thermal annealing

    SciTech Connect

    Rubin, L.; Herbots, N. . Center for Materials Science and Engineering); Hoffman, D. ); Ma, D. )

    1990-01-01

    The authors have studied the performance of diodes fabricated on n-type and p-type Si substrates by implanting As or B through a low-resistivity titanium-silicide layer. The effects of varying the implant dose, energy, and post-implant thermal treatment were investigated. After implantation, a rapid thermal anneal was found to be sufficient in removing most of the implant damage and activating the dopants, which resulted in N{sup +} {minus} p and p{sup +} {minus} n junctions under a low-resistivity silicide layer. The n{sup +} {minus} p junctions were as shallow as 1000 {angstrom} with reverse leakage currents as low as 5.5 {mu}A/cm{sup 2}. A conventional furnace anneal resulted in a further reduction of this leakage. Shallow p{sub +} {minus} n junctions could not be formed with boron implantation because of the large projected range of boron ions at the lowest available energy. Ti silicide films thinner than 600 {angstrom} exhibited a sharp rise in sheet resistivity after a furnace anneal, whereas thicker films exhibited more stable behavior. This is attributed to coalescence of the films. High-temperature furnace annealing diffused some of the dopants into the silicide film, reducing the surface concentrations at the TiSi{sub 2}-Si interface.

  19. Intercalation synthesis of graphene-capped iron silicide atop Ni(111): Evolution of electronic structure and ferromagnetic ordering

    NASA Astrophysics Data System (ADS)

    Grebenyuk, G. S.; Vilkov, O. Yu.; Rybkin, A. G.; Gomoyunova, M. V.; Senkovskiy, B. V.; Usachov, D. Yu.; Vyalikh, D. V.; Molodtsov, S. L.; Pronin, I. I.

    2017-01-01

    A new method for synthesis of graphene-protected iron silicides has been tested, which consists in formation of graphene on Ni(111) followed by two-step intercalation of the system with Fe and Si. Characterization of the samples was performed in situ by low-energy electron diffraction, angular-resolved photoelectron spectroscopy, core-level photoelectron spectroscopy with synchrotron radiation and magnetic linear dichroism in photoemission of Fe 3p electrons. It is shown, that at 400 °C the intercalation of graphene/Ni(111) with iron occurs in a range up to 14 ML. The graphene layer strongly interacts with the topmost Fe atoms and stabilizes the fcc structure of the film. The in-plane ferromagnetic ordering of the film has a threshold nature and arises after the intercalation of 5 ML Fe due to the thickness-driven spin reorientation transition. Subsequent intercalation of graphene/Fe/Ni(111) with Si leads to the formation of the inhomogeneous system consisted of intercalated and nonintercalated areas. The intercalated islands coalesce at 2 ML Si when a Fe-Si solid solution covered with the Fe3Si surface silicide is formed. The Fe3Si silicide is ferromagnetic and has an ordered (√3 × √3)R30° structure. The graphene layer is weakly electronically coupled to the silicide phase keeping its remarkable properties ready for use.

  20. Improvement of power conversion efficiency in photovoltaic-assisted UHF rectifiers by non-silicide technique applied to photovoltaic cells

    NASA Astrophysics Data System (ADS)

    Kotani, Koji

    2015-04-01

    Non-silicide PV cell structures were successfully applied to the photovoltaic (PV)-assisted UHF rectifier, which is one example realization of the “synergistic ambient energy harvesting” concept. Silicide blocking of PV cell area was experimentally verified to be effective for increasing photo-generated bias voltage, which resulted in the improved power conversion efficiency (PCE) of the rectifier by enhanced VTH compensation effect. Increase in both transparency of light and quantum efficiency of PV cells obtained by eliminating silicide layer affects the PCE improvement almost equally. 25.8% of PCE was achieved under the conditions of an RF input power of -20 dBm, a frequency of 920 MHz, an output load of 47 kΩ, and a typical indoor light irradiance level of 1 W/m2. In addition, when the non-silicide PV cell technique was applied to the voltage-boosted PV-cell structures, 32.1% peak PCE was achieved at 10 W/m2.

  1. In situ micro-Raman analysis and X-ray diffraction of nickel silicide thin films on silicon.

    PubMed

    Bhaskaran, M; Sriram, S; Perova, T S; Ermakov, V; Thorogood, G J; Short, K T; Holland, A S

    2009-01-01

    This article reports on the in situ analysis of nickel silicide (NiSi) thin films formed by thermal processing of nickel thin films deposited on silicon substrates. The in situ techniques employed for this study include micro-Raman spectroscopy (microRS) and X-ray diffraction (XRD); in both cases the variations for temperatures up to 350 degrees C has been studied. Nickel silicide thin films formed by vacuum annealing of nickel on silicon were used as a reference for these measurements. In situ analysis was carried out on nickel thin films on silicon, while the samples were heated from room temperature to 350 degrees C. Data was gathered at regular temperature intervals and other specific points of interest (such as 250 degrees C, where the reaction between nickel and silicon to form Ni(2)Si is expected). The transformations from the metallic state, through the intermediate reaction states, until the desired metal-silicon reaction product is attained, are discussed. The evolution of nickel silicide from the nickel film can be observed from both the microRS and XRD in situ studies. Variations in the evolution of silicide from metal for different silicon substrates are discussed, and these include (100) n-type, (100) p-type, and (110) p-type silicon substrates.

  2. Spectroscopic characterization of manganese minerals.

    PubMed

    Lakshmi Reddy, S; Padma Suvarna, K; Udayabhaska Reddy, G; Endo, Tamio; Frost, R L

    2014-01-03

    Manganese minerals ardenite, alleghanyite and leucopoenicite originated from Madhya Pradesh, India, Nagano prefecture Japan, Sussex Country and Parker Shaft Franklin, Sussex Country, New Jersey respectively are used in the present work. In these minerals manganese is the major constituent and iron if present is in traces only. An EPR study of on all of the above samples confirms the presence of Mn(II) with g around 2.0. Optical absorption spectrum of the mineral alleghanyite indicates that Mn(II) is present in two different octahedral sites and in leucophoenicite Mn(II) is also in octahedral geometry. Ardenite mineral gives only a few Mn(II) bands. NIR results of the minerals ardenite, leucophoenicite and alleghanyite are due to hydroxyl and silicate anions which confirming the formulae of the minerals.

  3. Mineral resource of the month: manganese

    USGS Publications Warehouse

    Corathers, Lisa A.

    2012-01-01

    Manganese is a silver-colored metal resembling iron and often found in conjunction with iron. The earliest-known human use of manganese compounds was in the Stone Age, when early humans used manganese dioxide as pigments in cave paintings. In ancient Rome and Egypt, people started using it to color or remove the color from glass - a practice that continued to modern times. Today, manganese is predominantly used in metallurgical applications as an alloying addition, particularly in steel and cast iron production. Steel and cast iron together provide the largest market for manganese (historically 85 to 90 percent), but it is also alloyed with nonferrous metals such as aluminum and copper. Its importance to steel cannot be overstated, as almost all types of steel contain manganese and could not exist without it.

  4. Microbial Formation of Manganese Oxides

    PubMed Central

    Greene, Anthony C.; Madgwick, John C.

    1991-01-01

    Microbial manganese oxidation was demonstrated at high Mn2+ concentrations (5 g/liter) in bacterial cultures in the presence of a microalga. The structure of the oxide produced varied depending on the bacterial strain and mode of culture. A nonaxenic, acid-tolerant microalga, a Chlamydomonas sp., was found to mediate formation of manganite (γ-MnOOH). Bacteria isolated from associations with crude cultures of this alga grown in aerated bioreactors formed disordered γ-MnO2 from Mn2+ at concentrations of 5 g/liter over 1 month, yielding 3.3 g of a semipure oxide per liter. All algal-bacterial cultures removed Mn2+ from solution, but only those with the highest removal rates formed an insoluble oxide. While the alga was an essential component of the reaction, a Pseudomonas sp. was found to be primarily responsible for the formation of a manganese precipitate. Medium components—algal biomass and urea—showed optima at 5.7 and 10 g/liters, respectively. The scaled-up culture (50 times) gave a yield of 22.3 g (53 mg/liter/day from a 15-liter culture) of semipure disordered γ-MnO2, identified by X-ray diffraction and Fourier transform infrared (FTIR) spectroscopy, and had a manganese oxide O/Mn ratio of 1.92. The Mn(IV) content in the oxide was low (30.5%) compared with that of mined or chemically formed γ-MnO2 (ca. 50%). The shortfall in the bacterial oxide manganese content was due to biological and inorganic contaminants. FTIR spectroscopy, transmission electron microscopy, and electron diffraction studies have identified manganite as a likely intermediate product in the formation of disordered γ-MnO2. PMID:16348459

  5. Negative impact of manganese on honeybee foraging

    PubMed Central

    Søvik, Eirik; Perry, Clint J.; LaMora, Angie; Barron, Andrew B.; Ben-Shahar, Yehuda

    2015-01-01

    Anthropogenic accumulation of metals such as manganese is a well-established health risk factor for vertebrates. By contrast, the long-term impact of these contaminants on invertebrates is mostly unknown. Here, we demonstrate that manganese ingestion alters brain biogenic amine levels in honeybees and fruit flies. Furthermore, we show that manganese exposure negatively affects foraging behaviour in the honeybee, an economically important pollinator. Our findings indicate that in addition to its direct impact on human health, the common industrial contaminant manganese might also have indirect environmental and economical impacts via the modulation of neuronal and behavioural functions in economically important insects. PMID:25808001

  6. Battles with Iron: Manganese in Oxidative Stress Protection*

    PubMed Central

    Aguirre, J. Dafhne; Culotta, Valeria C.

    2012-01-01

    The redox-active metal manganese plays a key role in cellular adaptation to oxidative stress. As a cofactor for manganese superoxide dismutase or through formation of non-proteinaceous manganese antioxidants, this metal can combat oxidative damage without deleterious side effects of Fenton chemistry. In either case, the antioxidant properties of manganese are vulnerable to iron. Cellular pools of iron can outcompete manganese for binding to manganese superoxide dismutase, and through Fenton chemistry, iron may counteract the benefits of non-proteinaceous manganese antioxidants. In this minireview, we highlight ways in which cells maximize the efficacy of manganese as an antioxidant in the midst of pro-oxidant iron. PMID:22247543

  7. Understanding and Improving High-Temperature Structural Properties of Metal-Silicide Intermetallics

    SciTech Connect

    Bruce S. Kang

    2005-10-10

    The objective of this project was to understand and improve high-temperature structural properties of metal-silicide intermetallic alloys. Through research collaboration between the research team at West Virginia University (WVU) and Dr. J.H. Schneibel at Oak Ridge National Laboratory (ORNL), molybdenum silicide alloys were developed at ORNL and evaluated at WVU through atomistic modeling analyses, thermo-mechanical tests, and metallurgical studies. In this study, molybdenum-based alloys were ductilized by dispersing MgAl2O4 or MgO spinel particles. The addition of spinel particles is hypothesized to getter impurities such as oxygen and nitrogen from the alloy matrix with the result of ductility improvement. The introduction of fine dispersions has also been postulated to improve ductility by acting as a dislocation source or reducing dislocation pile-ups at grain boundaries. The spinel particles, on the other hand, can also act as local notches or crack initiation sites, which is detrimental to the alloy mechanical properties. Optimization of material processing condition is important to develop the desirable molybdenum alloys with sufficient room-temperature ductility. Atomistic analyses were conducted to further understand the mechanism of ductility improvement of the molybdenum alloys and the results showed that trace amount of residual oxygen may be responsible for the brittle behavior of the as-cast Mo alloys. For the alloys studied, uniaxial tensile tests were conducted at different loading rates, and at room and elevated temperatures. Thermal cycling effect on the mechanical properties was also studied. Tensile tests for specimens subjected to either ten or twenty thermal cycles were conducted. For each test, a follow-up detailed fractography and microstructural analysis were carried out. The test results were correlated to the size, density, distribution of the spinel particles and processing time. Thermal expansion tests were carried out using thermo

  8. NbOsSi and TaOsSi - Two new superconducting ternary osmium silicides

    NASA Astrophysics Data System (ADS)

    Benndorf, Christopher; Heletta, Lukas; Heymann, Gunter; Huppertz, Hubert; Eckert, Hellmut; Pöttgen, Rainer

    2017-06-01

    The new equiatomic silicides NbOsSi and TaOsSi as well as ZrOsSi, TIrSi (T = Zr, Hf, Nb, Ta) and TPtSi (T = Nb, Ta) were prepared from the elements by arc-melting. These silicides crystallize with the orthorhombic TiNiSi type structure, space group Pnma. Irregularly shaped crystals of ZrOsSi, NbOsSi, TaOsSi, ZrIrSi and HfIrSi were separated from the annealed samples and investigated by single-crystal X-ray diffraction (a = 640.46(7), b = 404.07(5), c = 743.66(8) pm, wR2 = 0.0285, 390 F2 values, 20 variables for ZrOsSi; a = 629.78(6), b = 388.72(4), c = 727.48(7) pm, wR2 = 0.0350, 397 F2 values, 20 variables for NbOsSi, a = 626.80(6), b = 389.36(4), c = 726.22(7) pm, wR2 = 0.0501, 385 F2 values, 20 variables for TaOsSi, a = 653.48(8), b = 395.35(4), c = 739.19(8) pm, wR2 = 0.0427, 413 F2 values, 20 variables for ZrIrSi and a = 646.34(12), b = 393.57(7), c = 736.8(14) pm, wR2 = 0.0582, 371 F2 values, 20 variables for HfIrSi). The striking structural motifs in the new osmium compounds are three-dimensional [OsSi] networks (Os-Si: 240-251 pm) in which the osmium atoms have strongly distorted tetrahedral silicon coordination. High-pressure/high-temperature experiments (9.5 GPa/1520 K) on TaOsSi gave no hint for a structural phase transition. Temperature dependent measurements of the magnetic susceptibility and the electrical conductivity of NbOsSi and TaOsSi showed superconductivity below TC = 3.5 and 5.5 K, respectively. 29Si solid state MAS NMR investigations of the prepared silicides approved the structural models and showed a correlation between the observed 29Si resonance shifts and the electronegativity of the involved refractory metal.

  9. Regulation of cellular manganese and manganese transport rates in the unicellular alga Chlamydomonas

    SciTech Connect

    Sunda, W.G.; Huntsman, S.A.

    1985-01-01

    The cellular accumulation and uptake kinetics of manganese by Chlamydomonas sp. were studied in model chelate buffer systems. Cellular manganese concentrations and uptake rates were related to the computed free manganese ion concentration and were independent of the total or chelated manganese concentration. Cellular manganese was constant at about 1 mmol liter/sup -1/ of cellular volume at free manganese ion concentrations of 10/sup -7/ /sup 6/-10/sup -6/ /sup 3/ mol liter/sup -1/ and decreased below this range. Manganese uptake rates followed saturation kinetics and V/sub max/, but not K/sub s/, varied with the free manganese ion concentration in the growth medium. V/sub max/ appeared to be under negative feedback control and increased with decreasing manganese ion concentration. Variations of up to 30-fold in this parameter seemed to be instrumental in limiting the variation in cellular manganese to a sixfold range despite a 1000-fold variation in free manganese ion concentration in the growth medium.

  10. Identification of reaction products in the low-pressure chemical vapor deposition of molybdenum silicide

    SciTech Connect

    Gaczi, P.J.; Reynolds, G.J. )

    1989-09-01

    The gaseous species produced by low-pressure chemical vapor deposition of molybdenum silicide in a cold wall reactor were identified by mass spectroscopy. Lowering the ionizing electron energy made possible the unambiguous assignment of the mass spectra to individual species and also permitted useful quantitative estimates to be made. Thermodynamic calculations using the computer program SOLGASMIX were carried out on the M-Si-H-F (M = Mo, W) quaternary system. Both experiment and calculation indicate that the fluorosilanes were the major gaseous reaction by-products, with SiHF{sub 3} being the most abundant for the experimental conditions investigated here. The changes in the process with substrate temperature were also investigated and are discussed with reference to both thermodynamic and kinetic effects.

  11. Rare-earth silicide thin films on the Si(111) surface

    NASA Astrophysics Data System (ADS)

    Sanna, S.; Dues, C.; Schmidt, W. G.; Timmer, F.; Wollschläger, J.; Franz, M.; Appelfeller, S.; Dähne, M.

    2016-05-01

    Rare-earth induced layered structures on the Si(111) surface are investigated by a combined approach consisting of ab initio thermodynamics, electron and x-ray diffraction experiments, angle-resolved photoelectron spectroscopy, and scanning tunneling microscopy. Our density functional theory calculations predict the occurrence of structures with different periodicity, depending on the rare-earth availability. Microscopic structural models are assigned to the different silicide phases on the basis of stability criteria. The thermodynamically stable theoretical models are then employed to interpret the experimental results. The agreement between the simulated and measured scanning tunneling microscopy images validates the proposed structural models. The electronic properties of the surfaces are discussed on the basis of the calculated electronic band structure and photoelectron spectroscopy data.

  12. Metal gettering by boron-silicide precipitates in boron-implanted silicon

    SciTech Connect

    Myers, S.M.; Petersen, G.A.; Headley, T.J.; Michael, J.R.; Aselage, T.A.; Seager, C.H.

    1996-09-01

    We show that Fe, Co, Cu, and Au impurities in Si are strongly gettered to boron-silicide precipitates formed by supersaturation B implantation and annealing. Effective binding free energies relative to interstitial solution range form somewhat above 1 to more than 2 eV. The B-Si precipitates formed at temperatures {le}1100{degrees}C lack long range structural order but closely resemble and icosahedral B{sub 3}Si phase in composition, local bonding, and chemical potential. Evidence indicates that the metal atoms go into solution in the B-Si phase, and this is interpreted in terms of the novel bonding and structural characteristics of B-rich icosahedral compounds.

  13. Crystalline structures and misfit strain inside Er silicide nanocrystals self-assembled on Si(001) substrates.

    PubMed

    Ding, Tao; Wu, Yueqin; Song, Junqiang; Li, Juan; Huang, Han; Zou, Jin; Cai, Qun

    2011-06-17

    The morphology and crystalline structure of Er silicide nanocrystals self-assembled on the Si(001) substrate were investigated using scanning tunneling microscopy (STM) and transmission electron microscopy (TEM). It was found that the nanowires and nanorods formed at 630 °C has dominant hexagonal AlB(2)-type structure, while inside the nanoislands self-organized at 800 °C the tetragonal ThSi(2)-type structure is prevalent. The lattice analysis via cross-sectional high-resolution TEM demonstrated that internal misfit strain plays an important role in controlling the growth of nanocrystals. With the relaxation of strain, the nanoislands could evolve from a pyramid-like shape into a truncated-hut-like shape.

  14. Interaction of copper metallization with rare-earth metals and silicides

    SciTech Connect

    Molnar, G. L.; Peto, G.; Zsoldos, E.; Horvath, Z. E.

    2001-07-01

    Solid-phase reactions of copper films with underlying gadolinium, erbium, and erbium{endash}silicide layers on Si(100) substrates were investigated. For the phase analysis, x-ray diffraction and cross-sectional transmission electron microscopy were used. In the case of Cu/Gd/Si(100), an orthorhombic GdSi{sub 2} formed, and, at higher temperatures, copper aggregated into islands. Annealed Cu/Er/Si(100) samples resulted in a hexagonal Er{sub 5}Si{sub 3} phase. In the Cu/ErSi{sub 2{minus}x}/Si system, the copper catalyzes the transformation of the highly oriented hexagonal ErSi{sub 2{minus}x} phase into hexagonal Er{sub 5}Si{sub 3}. Diverse phase developments of the samples with Gd and Er are based on reactivity differences of the two rare-earth metals. {copyright} 2001 American Institute of Physics.

  15. Hydrogen generation systems and methods utilizing sodium silicide and sodium silica gel materials

    DOEpatents

    Wallace, Andrew P.; Melack, John M.; Lefenfeld, Michael

    2015-08-11

    Systems, devices, and methods combine thermally stable reactant materials and aqueous solutions to generate hydrogen and a non-toxic liquid by-product. The reactant materials can sodium silicide or sodium silica gel. The hydrogen generation devices are used in fuels cells and other industrial applications. One system combines cooling, pumping, water storage, and other devices to sense and control reactions between reactant materials and aqueous solutions to generate hydrogen. Springs and other pressurization mechanisms pressurize and deliver an aqueous solution to the reaction. A check valve and other pressure regulation mechanisms regulate the pressure of the aqueous solution delivered to the reactant fuel material in the reactor based upon characteristics of the pressurization mechanisms and can regulate the pressure of the delivered aqueous solution as a steady decay associated with the pressurization force. The pressure regulation mechanism can also prevent hydrogen gas from deflecting the pressure regulation mechanism.

  16. Hydrogen generation systems utilizing sodium silicide and sodium silica gel materials

    DOEpatents

    Wallace, Andrew P.; Melack, John M.; Lefenfeld, Michael

    2015-07-14

    Systems, devices, and methods combine reactant materials and aqueous solutions to generate hydrogen. The reactant materials can sodium silicide or sodium silica gel. The hydrogen generation devices are used in fuels cells and other industrial applications. One system combines cooling, pumping, water storage, and other devices to sense and control reactions between reactant materials and aqueous solutions to generate hydrogen. Multiple inlets of varied placement geometries deliver aqueous solution to the reaction. The reactant materials and aqueous solution are churned to control the state of the reaction. The aqueous solution can be recycled and returned to the reaction. One system operates over a range of temperatures and pressures and includes a hydrogen separator, a heat removal mechanism, and state of reaction control devices. The systems, devices, and methods of generating hydrogen provide thermally stable solids, near-instant reaction with the aqueous solutions, and a non-toxic liquid by-product.

  17. Modified fused silicide coatings for tantalum (Ta-10W) reentry heat shields

    NASA Technical Reports Server (NTRS)

    Packer, C. M.; Perkins, R. A.

    1973-01-01

    Results are presented of a program of research to develop a reliable, high performance, fused slurry silicide coating for the Ta-10W alloy. The effort was directed toward developing new and improved formulations for use at 2600 to 2800 F (1700 to 1811 K) in an atmospheric reentry thermal protection system with a 100-mission capability. Based on a thorough characterization of isothermal and cyclic oxidation behavior, bend transition temperatures, room- and elevated-temperature tensile properties, and creep behavior, a 2.5 Mn-33Ti-64.5Si coating (designated MTS) provides excellent protection for the Ta-10W alloy in simulated reentry environments. An extensive analysis of the oxidation behavior and characteristics of the MTS coating in terms of fundamental mechanisms also is presented.

  18. Hydrogen generation systems utilizing sodium silicide and sodium silica gel materials

    DOEpatents

    Wallace, Andrew P.; Melack, John M.; Lefenfeld, Michael

    2017-06-06

    Systems, devices, and methods combine reactant materials and aqueous solutions to generate hydrogen. The reactant materials can sodium silicide or sodium silica gel. The hydrogen generation devices are used in fuels cells and other industrial applications. One system combines cooling, pumping, water storage, and other devices to sense and control reactions between reactant materials and aqueous solutions to generate hydrogen. Multiple inlets of varied placement geometries deliver aqueous solution to the reaction. The reactant materials and aqueous solution are churned to control the state of the reaction. The aqueous solution can be recycled and returned to the reaction. One system operates over a range of temperatures and pressures and includes a hydrogen separator, a heat removal mechanism, and state of reaction control devices. The systems, devices, and methods of generating hydrogen provide thermally stable solids, near-instant reaction with the aqueous solutions, and a non-toxic liquid by-product.

  19. Fused slurry silicide coatings for columbium alloys reentry heat shields. Volume 1: Evaluation analysis

    NASA Technical Reports Server (NTRS)

    Fitzgerald, B.

    1973-01-01

    The R-512E (Si-20Cr-20Fe) fused slurry silicide coating process was optimized to coat full size (20in x 20in) single face rib and corrugation stiffened panels fabricated from FS-85 columbium alloy for 100 mission space shuttle heat shield applications. Structural life under simulated space shuttle lift-off stresses and reentry conditions demonstrated reuse capability well beyond 100 flights for R-512E coated FS-85 columbium heat shield panels. Demonstrated coating damage tolerance showed no immediate structural failure on exposure. The FS-85 columbium alloy was selected from five candidate alloys (Cb-752, C-129Y, WC-3015, B-66 and FS-85) based on the evaluation tests which have designed to determine: (1) change in material properties due to coating and reuse; (2) alloy tolerance to coating damage; (3) coating emittance characteristics under reuse conditions; and (4) new coating chemistries for improved coating life.

  20. Microstructure development and high-temperature oxidation of silicide coatings for refractory niobium alloys

    NASA Astrophysics Data System (ADS)

    Novak, Mark David

    Niobium alloys are candidate thermostructural materials in hypersonic flight applications because of excellent mechanical properties at elevated temperature; however, their susceptibility to oxidation requires the use of coatings. Multiphase silicide coatings containing iron, chromium, niobium, and silicon have historically been successful in protecting niobium in oxidizing environments, although little scientific understanding of this coating system is provided in publically available literature. Research efforts in process development, microstructural characterization, oxidation testing, and thermodynamic modeling have led to clarification of the coating microstructure, microstructural evolution, and the performance of the coating in oxidizing environments. These research efforts have led to strategies for improving coating performance, including surface planarization and modifying the coating with a dispersion of submicron alumina particles.

  1. Strain-promoted growth of Mn silicide nanowires on Si(001)

    NASA Astrophysics Data System (ADS)

    Miki, Kazushi; Liu, Hongjun; Owen, James H. G.; Renner, Christoph

    2011-03-01

    We have discovered a method to promote the growth of Mn silicide nanowires on the Si(001) at 450° C. Deposition of sub-monolayer quantities of Mn onto a Si(001) surface with a high density of Bi nanolines results in the formation of nanowires, 5-10 nm wide, and up to 600 nm long. These nanowires are never formed if the same growth procedure is followed in the absence of the Bi nanolines. The Haiku core of the Bi nanoline is known to induce short-range stress in the surrounding silicon surface, straining neighbouring dimers, and repelling step edges. We discuss the possible mechanisms for this effect, including the effect of the Bi nanolines on the surface stress tensor and alteration of the available diffusion channels on the surface. This research was partially supported by the Ministry of Education, Science, Sports and Culture, Grant-in-Aid for Scientific Research, the Iketani Science and Technology Foundation.

  2. Low resistivity metal silicide nanowires with extraordinarily high aspect ratio for future nanoelectronic devices.

    PubMed

    Chen, Sheng-Yu; Yeh, Ping-Hung; Wu, Wen-Wei; Chen, Uei-Shin; Chueh, Yu-Lun; Yang, Yu-Chen; Gwo, Shangir; Chen, Lih-Juann

    2011-11-22

    One crucial challenge for the integrated circuit devices to go beyond the current technology has been to find the appropriate contact and interconnect materials. NiSi has been commonly used in the 45 nm devices mainly because it possesses the lowest resistivity among all metal silicides. However, for devices of even smaller dimension, its stability at processing temperature is in doubt. In this paper, we show the growth of high-quality nanowires of NiSi(2), which is a thermodynamically stable phase and possesses low resistivity suitable for future generation electronics devices. The origin of low resistivity for the nanowires has been clarified to be due to its defect-free single-crystalline structure instead of surface and size effects. © 2011 American Chemical Society

  3. Friction and wear of radiofrequency-sputtered borides, silicides, and carbides

    NASA Technical Reports Server (NTRS)

    Brainard, W. A.; Wheeler, D. R.

    1978-01-01

    The friction and wear properties of several refractory compound coatings were examined. These compounds were applied to 440 C bearing steel surfaces by radiofrequency (RF) sputtering. The refractory compounds were the titanium and molybdenum borides, the titanium and molybdenum silicides, and the titanium, molybdenum, and boron carbides. Friction testing was done with a pin-on-disk wear apparatus at loads from 0.1 to 5.0 newtons. Generally, the best wear properties were obtained when the coatings were bias sputtered onto 440 C disks that had been preoxidized. Adherence was improved because of the better bonding of the coatings to the iron oxide formed during preoxidation. As a class the carbides provided wear protection to the highest loads. Titanium boride coatings provided low friction and good wear properties to moderate loads.

  4. Characterisation of amorphous molybdenum silicide (MoSi) superconducting thin films and nanowires

    NASA Astrophysics Data System (ADS)

    Banerjee, Archan; Baker, Luke J.; Doye, Alastair; Nord, Magnus; Heath, Robert M.; Erotokritou, Kleanthis; Bosworth, David; Barber, Zoe H.; MacLaren, Ian; Hadfield, Robert H.

    2017-08-01

    We report on the optimisation of amorphous molybdenum silicide thin film growth for superconducting nanowire single-photon detector (SNSPD) applications. Molybdenum silicide was deposited via co-sputtering from Mo and Si targets in an Ar atmosphere. The superconducting transition temperature (T c) and sheet resistance (R s) were measured as a function of thickness and compared to several theoretical models for disordered superconducting films. Superconducting and optical properties of amorphous materials are very sensitive to short- (up to 1 nm) and medium-range order (˜1-3 nm) in the atomic structure. Fluctuation electron microscopy studies showed that the films assumed an A15-like medium-range order. Electron energy loss spectroscopy indicates that the film stoichiometry was close to Mo83Si17, which is consistent with reports that many other A15 structures with the nominal formula A 3 B show a significant non-stoichiometry with A:B > 3:1. Optical properties from ultraviolet (270 nm) to infrared (2200 nm) wavelengths were measured via spectroscopic ellipsometry for 5 nm thick MoSi films indicating high long wavelength absorption. We also measured the current density as a function of temperature for nanowires patterned from a 10 nm thick MoSi film. The current density at 3.6 K is 3.6 × 105 A cm-2 for the widest wire studied (2003 nm), falling to 2 × 105 A cm-2 for the narrowest (173 nm). This investigation confirms the excellent suitability of MoSi for SNSPD applications and gives fresh insight into the properties of the underlying materials.

  5. Molybdenum Silicide Formation on Single Crystal, Polycrystalline and Amorphous Silicon: Growth, Structure and Electrical Properties

    NASA Astrophysics Data System (ADS)

    Doland, Charles Michael

    The solid state reactions that occur between a thin metal film and a silicon substrate are of scientific and technological interest. The initial interactions are poorly understood, yet the final state may critically depend on the initial interactions. In this work, the reactions of thin molybdenum films on amorphous, polycrystalline, and single crystal silicon substrates were studied, with an emphasis on the initial interdiffusion and the nucleation of the crystalline silicide phase. Our research was carried out in an ultrahigh vacuum (UHV) system in order to minimize effects of contaminants. In situ Raman scattering and Auger electron spectroscopy were used to probe the structure and composition of the films. Electron microscopy, low energy electron diffraction and Schottky barrier height measurements were used to obtain additional information. The hexagonal phase of the disilicide (h-MoSi _2) is the first phase formed. This occurs after 30 minute annealing at 400^ circC on clean samples. Impurities interfere with this reaction, but substrate crystallinity has no effect. The hexagonal phase transforms to the tetragonal phase (t-MoSi_2) after 800 ^circC annealing for all substrate types. Contamination retards this reaction, resulting in films containing both phases. For the thin films in this study, the transformation to t-MoSi_2 is accompanied by agglomeration of the films. From bulk thermodynamics, t-MoSi_2 is expected to be the first phase formed, but h -MoSi_2 is the first phase observed. This phase nucleates before t-MoSi_2, due to a lower silicide-silicon interfacial energy. Detailed knowledge of interfacial energies and effects of impurities are required to understand the initial phases of thin film solid state reactions.

  6. Nickel-affected silicon crystallization and silicidation on polyimide by multipulse excimer laser annealing

    SciTech Connect

    Alberti, A.; La Magna, A.; Spinella, C.; Privitera, V.; Cuscuna, M.; Fortunato, G.

    2010-12-15

    Nickel enhanced amorphous Si crystallization and silicidation on polyimide were studied during multipulse excimer laser annealing (ELA) from submelting to melting conditions. A {approx}8 nm thick Ni film was deposited on a 100 nm thick {alpha}-Si layer at {approx}70 deg. C in order to promote partial nickel diffusion into silicon. In the submelting regime, Ni atoms distributed during deposition in {alpha}-Si and the thermal gradient due to the presence of the plastic substrate were crucial to induce low fluence ({>=}0.08 J/cm{sup 2}) Si crystallization to a depth which is strictly related to the starting Ni profile. {Alpha}morphous-Si crystallization is not expected on pure Si at those low fluences. Additional pulses at higher fluences do not modify the double poly-Si/{alpha}-Si structure until melting conditions are reached. At a threshold of {approx}0.2 J/cm{sup 2}, melting was induced simultaneously in the polycrystalline layer as well as in the residual {alpha}-Si due to a thermal gradient of {approx}200 deg. C. Further increasing the laser fluence causes the poly-Si layer to be progressively melted to a depth which is proportional to the energy density used. As a consequence of the complete Si melting, columnar poly-Si grains are formed above 0.3 J/cm{sup 2}. For all fluences, a continuous NiSi{sub 2} layer is formed at the surface which fills the large Si grain boundaries, with the beneficial effect of flattening the poly-Si surface. The results would open the perspective of integrating Ni-silicide layers as metallic contacts on Si during {alpha}-Si-crystallization by ELA on plastic substrate.

  7. Template-directed atomically precise self-organization of perfectly ordered parallel cerium silicide nanowire arrays on Si(110)-16 × 2 surfaces

    PubMed Central

    2013-01-01

    The perfectly ordered parallel arrays of periodic Ce silicide nanowires can self-organize with atomic precision on single-domain Si(110)-16 × 2 surfaces. The growth evolution of self-ordered parallel Ce silicide nanowire arrays is investigated over a broad range of Ce coverages on single-domain Si(110)-16 × 2 surfaces by scanning tunneling microscopy (STM). Three different types of well-ordered parallel arrays, consisting of uniformly spaced and atomically identical Ce silicide nanowires, are self-organized through the heteroepitaxial growth of Ce silicides on a long-range grating-like 16 × 2 reconstruction at the deposition of various Ce coverages. Each atomically precise Ce silicide nanowire consists of a bundle of chains and rows with different atomic structures. The atomic-resolution dual-polarity STM images reveal that the interchain coupling leads to the formation of the registry-aligned chain bundles within individual Ce silicide nanowire. The nanowire width and the interchain coupling can be adjusted systematically by varying the Ce coverage on a Si(110) surface. This natural template-directed self-organization of perfectly regular parallel nanowire arrays allows for the precise control of the feature size and positions within ±0.2 nm over a large area. Thus, it is a promising route to produce parallel nanowire arrays in a straightforward, low-cost, high-throughput process. PMID:24188092

  8. Improvement of heavy dopant doped Ni-silicide using ytterbium interlayer for nano-scale MOSFETS with an ultra shallow junction.

    PubMed

    Shin, Hong-Sik; Oh, Se-Kyung; Kang, Min-Ho; Li, Shi-Guang; Lee, Ga-Won; Lee, Hi-Deok

    2011-07-01

    In this paper, a novel Ni silicide with Yb interlayer (Yb/Ni/TiN) on a boron cluster (B18H22) implanted source/drain junction is proposed for the first time, and its thermal stability characteristics are analyzed in depth. The proposed Ni-silicide exhibits a wider RTP temperature window for uniform sheet resistance, surface roughness and better thermal stability than the conventional structure (Ni/TiN). In addition, the cross-sectional profile of the proposed Ni-silicide showed less agglomeration despite the high temperature post-silicidation annealing, and it can be said that the proposed structure was little dependence on the temperature post-silicidation annealing. The improvement of Ni silicide properties is analyzed and found to be due to the formation of the rare earth metal--NiSi (YbNi2Si2), whose peaks were confirmed by XRD. The junction leakage current of the p + -n junction with Yb/Ni/TiN and B18H22 implantation is smaller than that with Ni/TiN by almost one order of magnitude as well as improving the thermal stability of ultra shallow junction.

  9. 21 CFR 73.2775 - Manganese violet.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2775 Manganese violet. (a) Identity. The color additive... less than 93 percent. (c) Uses and restrictions. Manganese violet is safe for use in coloring cosmetics generally, including cosmetics applied to the area of the eye, in amounts consistent with good manufacturing...

  10. Control of bacterial iron homeostasis by manganese

    PubMed Central

    Puri, Sumant; Hohle, Thomas H.; O'Brian, Mark R.

    2010-01-01

    Perception and response to nutritional iron availability by bacteria are essential to control cellular iron homeostasis. The Irr protein from Bradyrhizobium japonicum senses iron through the status of heme biosynthesis to globally regulate iron-dependent gene expression. Heme binds directly to Irr to trigger its degradation. Here, we show that severe manganese limitation created by growth of a Mn2+ transport mutant in manganese-limited media resulted in a cellular iron deficiency. In wild-type cells, Irr levels were attenuated under manganese limitation, resulting in reduced promoter occupancy of target genes and altered iron-dependent gene expression. Irr levels were high regardless of manganese availability in a heme-deficient mutant, indicating that manganese normally affects heme-dependent degradation of Irr. Manganese altered the secondary structure of Irr in vitro and inhibited binding of heme to the protein. We propose that manganese limitation destabilizes Irr under low-iron conditions by lowering the threshold of heme that can trigger Irr degradation. The findings implicate a mechanism for the control of iron homeostasis by manganese in a bacterium. PMID:20498065

  11. 21 CFR 184.1461 - Manganese sulfate.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... Specific Substances Affirmed as GRAS § 184.1461 Manganese sulfate. (a) Manganese sulfate (MnSO4·H2O, CAS... dioxide in sulfuric acid, and the roasting of pyrolusite (MnO2) ore with solid ferrous sulfate and coal...

  12. Manganese nodules: thorium-230: protactinium-231 ratios.

    PubMed

    Sackett, W M

    1966-11-04

    The Th(230): Pa(231) activity ratio in 7 of 11 manganese nodules is less than 10.8, the theoretical production ratio of activities in the ocean. This finding indicates difierential accumulation of these nuclides in authigenic deposits of manganese-iron oxide.

  13. Dinuclear manganese centers in the manganese-lead-tellurate glasses.

    PubMed

    Rada, S; Dehelean, A; Culea, M; Culea, E

    2011-07-01

    FTIR, UV-VIS and EPR spectra of manganese doped lead-tellurate glasses with composition xMnO·(100-x)[4TeO2·PbO2] where x=0, 1, 5, 10, 20, 30, 40mol% have been studied. The FTIR spectra show the formation of the Mn-O-Pb and Mn-O-Te bridging bonds by increasing of MnO concentration. The UV-VIS spectra show the Mn(+3) species exhibit pronounced absorption, which masks the Mn(+2) spin-forbidden absorption bands when Mn(+2) ions are in high concentrations in these glasses. The EPR spectra exhibit resonance signals characteristic of Mn(+2) ions. The resonance signal located at g≈2 is due to Mn(+2) ions in an environment close to octahedral symmetry, whereas the resonance at g≈4.3 and 3.3 are attributed to the rhombic surroundings of the Mn(+2) ions. The increase in the MnO content gives rise to absorption at g≈2.4 and the paramagnetic ions are involved in dinuclear manganese centers. Copyright © 2011 Elsevier B.V. All rights reserved.

  14. RNASeq in C. elegans following manganese exposure

    PubMed Central

    Parmalee, Nancy L.; Maqbool, Shahina B.; Ye, Bin; Calder, Brent; Bowman, Aaron B.; Aschner, Michael

    2015-01-01

    Manganese is a metal that is required for optimal biological functioning of organisms. Absorption, cellular import and export, and excretion of manganese are all tightly regulated. While some genes involved in regulation, such as DMT-1 and ferroportin are known, it is presumed that many more are involved and as yet unknown. Excessive exposure to manganese, usually in industrial settings, such as mining or welding, can lead to neurotoxicity and a condition known as manganism that closely resembles Parkinson's disease. Elucidating transcriptional changes following manganese exposure could lead to the development of biomarkers for exposure. This unit presents a protocol for RNA sequencing in the worm Caenorhabditis elegans to assay for transcriptional changes following exposure to manganese. This protocol is adaptable to any environmental exposure in C. elegans. The protocol results in counts of gene transcripts in control versus exposed conditions, and a ranked list of differentially expressed genes for further study. PMID:26250396

  15. Reagent removal of manganese from ground water

    NASA Astrophysics Data System (ADS)

    Brayalovsky, G.; Migalaty, E.; Naschetnikova, O.

    2017-06-01

    The study is aimed at the technology development of treating drinking water from ground waters with high manganese content and oxidizability. Current technologies, physical/chemical mechanisms and factors affecting in ground treatment efficiency are reviewed. Research has been conducted on manganese compound removal from ground waters with high manganese content (5 ppm) and oxidizability. The studies were carried out on granular sorbent industrial ODM-2F filters (0.7-1.5 mm fraction). It was determined that conventional reagent oxidization technologies followed by filtration do not allow us to obtain the manganese content below 0.1 ppm when treating ground waters with high oxidizability. The innovative oxidation-based manganese removal technology with continuous introduction of reaction catalytic agent is suggested. This technology is effective in alkalization up to pH 8.8-9. Potassium permanganate was used as a catalytic agent, sodium hypochlorite was an oxidizer and cauistic soda served an alkalifying agent.

  16. RNASeq in C. elegans Following Manganese Exposure.

    PubMed

    Parmalee, Nancy L; Maqbool, Shahina B; Ye, Bin; Calder, Brent; Bowman, Aaron B; Aschner, Michael

    2015-08-06

    Manganese is a metal that is required for optimal biological functioning of organisms. Absorption, cellular import and export, and excretion of manganese are all tightly regulated. While some genes involved in regulation, such as DMT-1 and ferroportin, are known, it is presumed that many more are involved and as yet unknown. Excessive exposure to manganese, usually in industrial settings such as mining or welding, can lead to neurotoxicity and a condition known as manganism that closely resembles Parkinson's disease. Elucidating transcriptional changes following manganese exposure could lead to the development of biomarkers for exposure. This unit presents a protocol for RNA sequencing in the worm Caenorhabditis elegans to assay for transcriptional changes following exposure to manganese. This protocol is adaptable to any environmental exposure in C. elegans. The protocol results in counts of gene transcripts in control versus exposed conditions and a ranked list of differentially expressed genes for further study. Copyright © 2015 John Wiley & Sons, Inc.

  17. Iron and manganese removal by using manganese ore constructed wetlands in the reclamation of steel wastewater.

    PubMed

    Xu, Jing-Cheng; Chen, Gu; Huang, Xiang-Feng; Li, Guang-Ming; Liu, Jia; Yang, Na; Gao, Sai-Nan

    2009-09-30

    To reclaim treated steel wastewater as cooling water, manganese ore constructed wetland was proposed in this study for the removal of iron and manganese. In lab-scale wetlands, the performance of manganese ore wetland was found to be more stable and excellent than that of conventional gravel constructed wetland. The iron and manganese concentration in the former was below 0.05 mg/L at hydraulic retention time of 2-5 days when their influent concentrations were in the range of 0.16-2.24 mg/L and 0.11-2.23 mg/L, respectively. Moreover, its removals for COD, turbidity, ammonia nitrogen and total phosphorus were 55%, 90%, 67% and 93%, respectively, superior to the corresponding removals in the gravel wetland (31%, 86%, 58% and 78%, respectively). The good performance of manganese ore was ascribed to the enhanced biological manganese removal with the aid of manganese oxide surface and the smaller size of the medium. The presence of biological manganese oxidation was proven by the facts of good manganese removal in wetlands at chemical unfavorable conditions (such as ORP and pH) and the isolation of manganese oxidizing strains from the wetlands. Similar iron and manganese removal was later observed in a pilot-scale gravel-manganese-ore constructed wetland, even though the manganese ore portion in total volume was reduced from 100% (in the lab-scale) to only 4% (in the pilot-scale) for the sake of cost-saving. The quality of the polished wastewater not only satisfied the requirement for cooling water but also suitable as make-up water for other purposes.

  18. Copper silicide/silicon nanowire heterostructures: in situ TEM observation of growth behaviors and electron transport properties.

    PubMed

    Chiu, Chung-Hua; Huang, Chun-Wei; Chen, Jui-Yuan; Huang, Yu-Ting; Hu, Jung-Chih; Chen, Lien-Tai; Hsin, Cheng-Lun; Wu, Wen-Wei

    2013-06-07

    Copper silicide has been studied in the applications of electronic devices and catalysts. In this study, Cu3Si/Si nanowire heterostructures were fabricated through solid state reaction in an in situ transmission electron microscope (TEM). The dynamic diffusion of the copper atoms in the growth process and the formation mechanism are characterized. We found that two dimensional stacking faults (SF) may retard the growth of Cu3Si. Due to the evidence of the block of edge-nucleation (heterogeneous) by the surface oxide, center-nucleation (homogeneous) is suggested to dominate the silicidation. Furthermore, the electrical transport properties of various silicon channel length with Cu3Si/Si heterostructure interfaces and metallic Cu3Si NWs have been investigated. The observations not only provided an alternative pathway to explore the formation mechanisms and interface properties of Cu3Si/Si, but also suggested the potential application of Cu3Si at nanoscale for future processing in nanotechnology.

  19. Fabrication and characterization of periodic arrays of epitaxial Ni-silicide nanocontacts on (1 1 0)Si

    NASA Astrophysics Data System (ADS)

    Cheng, S. L.; Chang, L. H.; Chuang, C. F.; Chen, H.

    2015-07-01

    In this study, we report on the fabrication and characterization of periodic Ni and Ni-silicide nanocontact arrays on (1 1 0)Si substrates. From transmission electron microscopy and selected-area electron diffraction analysis, it is found that the epitaxial NiSi2 is the first and the only silicide phase formed in the nanoscale Ni contact/(1 1 0)Si sample after annealing at a temperature as low as 300 °C, demonstrating that the nanoscale Ni contact is more favorable for the epitaxial growth of NiSi2 phase on (1 1 0)Si. The orientation relationship between the epitaxial NiSi2 nanocontacts and the (1 1 0)Si substrate is identified as [1 1 0]NiSi2//[1 1 0]Si and (1 bar 1 1 bar)NiSi2//(1 bar 1 1 bar)Si. For the samples annealed at higher temperatures, all the epitaxial NiSi2 nanocontacts formed on (1 1 0)Si are anisotropic in shape and elongated along the crystallographic < 1 1 bar 0 > directions. The observed results can be attributed to the higher surface area to volume ratio of Ni nanocontacts and the faster growth rate along the <1 1 0> directions than along other directions. The size and periodicity of the nanocontacts can be readily controlled by adjusting the diameter of the colloidal nanosphere template. The self-assembled approach proposed here will provide the capability to fabricate other highly-ordered metal silicide nanocontact arrays and may offer potential applications in constructing silicide-based nanodevices.

  20. Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology

    PubMed Central

    Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

    2015-01-01

    This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm2, and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p+−n homojunction through the formation of re-grown crystalline silicon layer (~5–10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method. PMID:26632759

  1. The Manganese Toxicity of Cotton 1

    PubMed Central

    Sirkar, Sheela; Amin, J. V.

    1974-01-01

    Cotton plants (Gossypium hirsutum. Linn. var. Sankar 4) were grown at normal and toxic levels of substrate manganese, and the altered metabolism of manganese toxic plants was studied. The tissues of plants exposed to toxic levels of manganese had higher activities of peroxidase and polyphenol oxidase, and the activities of catalase, ascorbic acid oxidase, glutathione oxidase and cytochrome c oxidase were lowered. In addition, the high manganese tissue had lower contents of ATP and glutathione but higher amounts of ascorbic acid. The respiration of the partially expanded leaves and the growing tips of toxic plants were depressed when compared to that of the normal tissues. The metabolic changes of manganese toxicity of cotton are placed in the following order: accumulation of manganese in the leaf tissue; a rise in respiration; stimulation of polyphenol oxidase; the appearance of initial toxicity symptoms; the evolution of ethylene and stimulation of peroxidase; the presence of severe toxicity symptoms; the depression of terminal oxidases and respiration; abscission of the growing tip and proliferation of the stem tissue. The early stimulation of polyphenol oxidase may be used to detect potential manganese toxicity. PMID:16658924

  2. On the interdiffusion in multilayered silicide coatings for the vanadium-based alloy V-4Cr-4Ti

    NASA Astrophysics Data System (ADS)

    Chaia, N.; Portebois, L.; Mathieu, S.; David, N.; Vilasi, M.

    2017-02-01

    To provide protection against corrosion at high temperatures, silicide diffusion coatings were developed for the V-4Cr-4Ti alloy, which can be used as the fuel cladding in next-generation sodium-cooled fast breeder reactors. The multilayered coatings were prepared by halide-activated pack cementation using MgF2 as the transport agent and pure silicon (high activity) as the master alloy. Coated pure vanadium and coated V-4Cr-4Ti alloy were studied and compared as substrates. In both cases, the growth of the silicide layers (V3Si, V5Si3, V6Si5 and VSi2) was controlled exclusively by solid-state diffusion, and the growth kinetics followed a parabolic law. Wagner's analysis was adopted to calculate the integrated diffusion coefficients for all silicides. The estimated values of the integrated diffusion coefficients range from approximately 10-9 to 10-13 cm2 s-1. Then, a diffusion-based numerical approach was used to evaluate the growth and consumption of the layers when the coated substrates were exposed at critical temperatures. The estimated lifetimes of the upper VSi2 layer were 400 h and 280 h for pure vanadium and the V-4Cr-4Ti alloy, respectively. The result from the numeric simulation was in good agreement with the layer thicknesses measured after aging the coated samples at 1150 °C under vacuum.

  3. Electrical and optical properties of sub-10 nm nickel silicide films for silicon solar cells

    NASA Astrophysics Data System (ADS)

    Brahmi, Hatem; Ravipati, Srikanth; Yarali, Milad; Shervin, Shahab; Wang, Weijie; Ryou, Jae-Hyun; Mavrokefalos, Anastassios

    2017-01-01

    Highly conductive and transparent films of ultra-thin p-type nickel silicide films have been prepared by RF magnetron sputtering of nickel on silicon substrates followed by rapid thermal annealing in an inert environment in the temperature range 400-600 °C. The films are uniform throughout the wafer with thicknesses in the range of 3-6 nm. The electrical and optical properties are presented for nickel silicide films with varying thickness. The Drude-Lorentz model and Fresnel equations were used to calculate the dielectric properties, sheet resistance, absorption and transmission of the films. These ultrathin nickel silicide films have excellent optoelectronic properties for p-type contacts with optical transparencies up to 80% and sheet resistance as low as ~0.15 µΩ cm. Furthermore, it was shown that the use of a simple anti-reflection (AR) coating can recover most of the reflected light approaching the values of a standard Si solar cell with the same AR coating. Overall, the combination of ultra-low thickness, high transmittance, low sheet resistance and ability to recover the reflected light by utilizing standard AR coating makes them ideal for utilization in silicon based photovoltaic technologies as a p-type transparent conductor.

  4. Pack cementation Cr-Al coating of steels and Ge-doped silicide coating of Cr-Nb alloy

    SciTech Connect

    He, Y.R.; Zheng, M.H.; Rapp, R.A.

    1995-08-01

    Carbon steels or low-alloy steels used in utility boilers, heat exchangers, petrochemical plants and coal gasification systems are subjected to high temperature corrosion attack such as oxidation, sulfidation and hot corrosion. The pack cementation coating process has proven to be an economical and effective method to enhance the corrosion resistance by modifying the surface composition of steels. With the aid of a computer program, STEPSOL, pack cementation conditions to produce a ferrite Cr-Al diffusion coating on carbon-containing steels by using elemental Cr and Al powders have been calculated and experimentally verified. The cyclic oxidation kinetics for the Cr-Al coated steels are presented. Chromium silicide can maintain high oxidation resistance up to 1100{degrees}C by forming a SiO{sub 2} protective scale. Previous studies at Ohio State University have shown that the cyclic oxidation resistance of MOSi{sub 2} and TiSi{sub 2} can be further improved by Ge addition introduced during coating growth. The halide-activated pack cementation process was modified to produce a Ge-doped silicide diffusion coating in a single processing step for the ORNL-developed Cr-Nb advanced intermetallic alloy. The oxidation behavior of the silicide-coated Cr-Nb alloy was excellent: weight gain of about 1 mg/cm{sup 2} upon oxidation at 1100{degrees}C in air for 100 hours.

  5. Nano-Borides and Silicide Dispersed Composite Coating on AISI 304 Stainless Steel by Laser-Assisted HVOF Spray Deposition

    NASA Astrophysics Data System (ADS)

    Sharma, Prashant; Majumdar, Jyotsna Dutta

    2014-10-01

    The study concerned a detailed microstructural investigation of nano-borides (Cr2B and Ni3B) and nano-silicide (Ni2Si) dispersed γ-nickel composite coating on AISI 304 stainless steel by HVOF spray deposition of the NiCrBSi precursor powder and subsequent laser surface melting. A continuous wave diode laser with an applied power of 3 kW and scan speed of 20 mm/s in argon shroud was employed. The characterization of the surface in terms of microstructure, microtexture, phases, and composition were carried out and compared with the as-coated (high-velocity oxy-fuel sprayed) surface. Laser surface melting led to homogenization and refinement of microstructures with the formation of few nano-silicides of nickel along with nano-borides of nickel and chromium (Ni3B, Cr2B, and Cr2B3). A detailed microtexture analysis showed the presence of no specific texture in the as-sprayed and laser-melted surface of Cr2B and Ni3B phases. The average microhardness was improved to 750-900 VHN as compared to 250 VHN of the as-received substrate. Laser surface melting improved the microhardness further to as high as 1400 VHN due to refinement of microstructure and the presence of silicides.

  6. Phase formation and morphological stability of ultrathin Ni-Co-Pt silicide films formed on Si(100)

    SciTech Connect

    Xu, Peng; Wu, Dongping; Kubart, Tomas; Gao, Xindong; Zhang, Shi-Li

    2014-05-15

    Ultrathin Ni, Co, and Pt films, each no more than 4 nm in thickness, as well as their various combinations are employed to investigate the competing growth of epitaxial Co{sub 1-y}Ni{sub y}Si{sub 2} films against polycrystalline Pt{sub 1-z}Ni{sub z}Si. The phase formation critically affects the morphological stability of the resulting silicide films, with the epitaxial films being superior to the polycrystalline ones. Any combination of those metals improves the morphological stability with reference to their parent individual metal silicide films. When Ni, Co, and Pt are all included, the precise initial location of Pt does little to affect the final phase formation in the silicide films and the epitaxial growth of Co{sub 1-x}Ni{sub x}Si{sub 2} films is always perturbed, in accordance to thermodynamics that shows a preferential formation of Pt{sub 1-z}Ni{sub z}Si over that of Co{sub 1-y}Ni{sub y}Si{sub 2}.

  7. [Tongue play and manganese deficiency in dairy cattle].

    PubMed

    Karatzias, H; Roubies, N; Polizopoulou, Z; Papasteriades, A

    1995-09-01

    The present paper discusses "tongue rolling" observed in dairy cattle farms of a region in northern Greece associated with manganese deficiency. In these animals total body manganese status was evaluated by determining hair, as well as feed manganese content. Cows exhibiting tongue rolling had significantly lower hair manganese content, compared to non-tongue rolling control animals from other farms; in addition, feedstuff analysis demonstrated that manganese and inorganic phosphorus intake of affected cows was also significantly lower.

  8. A Study on the Oxidation Behavior of Nb Alloy (Nb-1 pct Zr-0.1 pct C) and Silicide-Coated Nb Alloys

    NASA Astrophysics Data System (ADS)

    Vishwanadh, B.; Naina, R. H.; Majumdar, S.; Tewari, R.; Dey, G. K.

    2013-05-01

    In the current work, silicide coatings were produced on the Nb alloy (Nb-1 pct Zr-0.1 pct C) using the halide activated pack cementation (HAPC) technique. Coating parameters (temperature and time) were optimized to produce a two-layer (Nb5Si3 and NbSi2) coating on the Nb alloy. Subsequently, the oxidation behavior of the Nb alloy (Nb-1 pct Zr-0.1 pct C) and silicide-coated Nb alloy was studied using thermogravimetric analysis (TGA) and isothermal weight gain oxidation experiments. Phase identification and morphological examinations were carried out using X-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. TGA showed that the Nb alloy started undergoing accelerated oxidation at and above 773 K (500 °C). Isothermal weight gain experiments carried out on the Nb alloy under air environment at 873 K (600 °C) up to a time period of 16 hours exhibited a linear growth rate law of oxidation. In the case of silicide-based coatings, TGA showed that oxidation resistance of silicide coatings was retained up to 1473 K (1200 °C). Isothermal weight gain experiments on the silicide coatings carried out at 1273 K (1000 °C) in air showed that initially up to 8 hours, the weight of the sample increased, and beyond 8 hours the weight of the sample remained constant. The oxide phases formed on the bare samples and on the coated samples during oxidation were found to be Nb2O5 and a mixture of SiO2 and Nb2O5 phases, respectively. SEM showed the formation of nonprotective oxide layer on the bare Nb alloy and a protective (adherent, nonporous) oxide layer on silicide-coated samples. The formation of protective SiO2 layer on the silicide-coated samples greatly improved the oxidation resistance at higher temperatures.

  9. Manganese oxide nanoparticles, methods and applications

    DOEpatents

    Abruna, Hector D.; Gao, Jie; Lowe, Michael A.

    2017-08-29

    Manganese oxide nanoparticles having a chemical composition that includes Mn.sub.3O.sub.4, a sponge like morphology and a particle size from about 65 to about 95 nanometers may be formed by calcining a manganese hydroxide material at a temperature from about 200 to about 400 degrees centigrade for a time period from about 1 to about 20 hours in an oxygen containing environment. The particular manganese oxide nanoparticles with the foregoing physical features may be used within a battery component, and in particular an anode within a lithium battery to provide enhanced performance.

  10. Reduction Mechanisms in Manganese Ore Reduction

    NASA Astrophysics Data System (ADS)

    Coetsee, Theresa; Reinke, Christian; Nell, Johannes; Pistorius, Petrus Christiaan

    2015-12-01

    Manganese ores are highly heterogeneous and contain various minerals with different levels of contained manganese and iron and therefore the ore reduction behavior is not uniform. Both phase chemistry and phase morphology at the reaction interface, at micron scale, must be investigated to understand the reaction mechanism effects in manganese ore reduction. This approach is applied here to reacted material mixture samples taken from the AlloyStream pilot plant furnace over a period of 4 months. The mineralogical features are reported and discussed. Deductions are made on the likely dominant reduction mechanism in this reaction system, given the phase morphology observations presented.

  11. Manganese

    MedlinePlus

    ... weeks can slightly reduce weight in overweight people. Wound healing. Early research suggests that applying a dressing containing ... to chronic wounds for 12 weeks may improve wound healing. Anemia. Other conditions. More evidence is needed to ...

  12. Manganese-containing ionic liquids: synthesis, crystal structures and electrodeposition of manganese films and nanoparticles.

    PubMed

    Sniekers, Jeroen; Malaquias, João C; Van Meervelt, Luc; Fransaer, Jan; Binnemans, Koen

    2017-02-21

    Manganese(ii)-containing ionic liquids were synthesized, in which the manganese atoms are coordinated by glymes (diglyme, triglyme, tetraglyme), pyridine-N-oxide, dimethylsulfoxide or N-alkylimidazoles (N-methylimidazole, N-butylimidazole and N-hexylimidazole). As anion, bis(trifluoromethanesulfonyl)imide (bistriflimide, Tf2N(-)), trifluoromethanesulfonate (triflate, OTf(-)) or methanesulfonate (mesylate, OMs(-)) were used. The compounds were characterized by CHN analysis, FTIR, DSC and single-crystal X-ray diffraction measurements. All manganese atoms were six-coordinate. It was found that the glyme-type ligands were replaced by atmospheric water upon leaving the crystals open to the air for several days. The crystal structures of seven compounds were described in detail and the compounds with the lowest melting temperatures were tested as electrolytes for the electrodeposition of manganese (thin) films. An irreversible reduction wave from Mn(ii) to Mn(0) and granular manganese deposits were observed for all compounds, except for liquid manganese salts with N-alkylimidazole ligands and bistriflimide anions, where the electrochemical formation of manganese nanoparticles was observed instead of the deposition of a manganese layer. However, for compounds with the same cation but with a triflate or methanesulfonate anion, manganese metal deposits were obtained, indicating that the nature of the anion has an important effect on the electrochemical properties of liquid metal salts.

  13. Manganese concentrate usage in steelmaking

    NASA Astrophysics Data System (ADS)

    Nokhrina, O. I.; Rozhihina, I. D.

    2015-09-01

    The results of the research process of producing metalized products by solid-phase reduction of iron using solid carbonaceous reducing agents. Thermodynamic modeling was carried out on the model of the unit the Fe-C-O and system with iron ore and coal. As a result of modeling the thermodynamic boundary reducing, oxidizing, and transition areas and the value of the ratio of carbon and oxygen in the system. Simulation of real systems carried out with the gas phase obtained in the pyrolys of coal. The simulation results allow to determine the optimal cost of coal required for complete reduction of iron ore from a given composition. The kinetics of the processes of solid-phase reduction of iron using coal of various technological brands. The paper describes experiments on effects of metal deoxidizer composition, component proportion, pelletizing mixture, particle size distribution of basic materials and flux on manganese recovering from oxides under direct melting.

  14. Neurotoxicity of manganese oxide nanomaterials

    NASA Astrophysics Data System (ADS)

    Stefanescu, Diana M.; Khoshnan, Ali; Patterson, Paul H.; Hering, Janet G.

    2009-11-01

    Manganese (Mn) toxicity in humans has been observed as manganism, a disease that resembles Parkinson's disease. The mechanism of Mn toxicity and the chemical forms that may be responsible for its neurotoxicity are not well understood. We examined the toxicity of Mn oxide nanomaterials in a neuronal precursor cell model, using the MTS assay to evaluate mitochondrial function in living cells and the LDH assay to quantify the release of the enzyme lactate dehydrogenase as a result of damage to the cell membrane. Both assays show that the toxicity of Mn is dependent on the type of Mn oxide nanomaterial and its concentration as well as on the state of cell differentiation. Following exposure to Mn oxide nanomaterials, reactive oxygen species (ROS) are generated, and flow cytometry experiments suggest that cell death occurred through apoptosis. During exposure to Mn oxide nanomaterials, increased levels of the transcription factor NF-κB (which mediates the cellular inflammatory response) were observed.

  15. Copper silicide/silicon nanowire heterostructures: in situ TEM observation of growth behaviors and electron transport properties

    NASA Astrophysics Data System (ADS)

    Chiu, Chung-Hua; Huang, Chun-Wei; Chen, Jui-Yuan; Huang, Yu-Ting; Hu, Jung-Chih; Chen, Lien-Tai; Hsin, Cheng-Lun; Wu, Wen-Wei

    2013-05-01

    Copper silicide has been studied in the applications of electronic devices and catalysts. In this study, Cu3Si/Si nanowire heterostructures were fabricated through solid state reaction in an in situ transmission electron microscope (TEM). The dynamic diffusion of the copper atoms in the growth process and the formation mechanism are characterized. We found that two dimensional stacking faults (SF) may retard the growth of Cu3Si. Due to the evidence of the block of edge-nucleation (heterogeneous) by the surface oxide, center-nucleation (homogeneous) is suggested to dominate the silicidation. Furthermore, the electrical transport properties of various silicon channel length with Cu3Si/Si heterostructure interfaces and metallic Cu3Si NWs have been investigated. The observations not only provided an alternative pathway to explore the formation mechanisms and interface properties of Cu3Si/Si, but also suggested the potential application of Cu3Si at nanoscale for future processing in nanotechnology.Copper silicide has been studied in the applications of electronic devices and catalysts. In this study, Cu3Si/Si nanowire heterostructures were fabricated through solid state reaction in an in situ transmission electron microscope (TEM). The dynamic diffusion of the copper atoms in the growth process and the formation mechanism are characterized. We found that two dimensional stacking faults (SF) may retard the growth of Cu3Si. Due to the evidence of the block of edge-nucleation (heterogeneous) by the surface oxide, center-nucleation (homogeneous) is suggested to dominate the silicidation. Furthermore, the electrical transport properties of various silicon channel length with Cu3Si/Si heterostructure interfaces and metallic Cu3Si NWs have been investigated. The observations not only provided an alternative pathway to explore the formation mechanisms and interface properties of Cu3Si/Si, but also suggested the potential application of Cu3Si at nanoscale for future processing

  16. Rate Theory Modeling and Simulations of Silicide Fuel at LWR Conditions

    SciTech Connect

    Miao, Yinbin; Ye, Bei; Mei, Zhigang; Hofman, Gerard; Yacout, Abdellatif

    2015-12-10

    Uranium silicide (U3Si2) fuel has higher thermal conductivity and higher uranium density, making it a promising candidate for the accident-tolerant fuel (ATF) used in light water reactors (LWRs). However, previous studies on the fuel performance of U3Si2, including both experimental and computational approaches, have been focusing on the irradiation conditions in research reactors, which usually involve low operation temperatures and high fuel burnups. Thus, it is important to examine the fuel performance of U3Si2 at typical LWR conditions so as to evaluate the feasibility of replacing conventional uranium dioxide fuel with this silicide fuel material. As in-reactor irradiation experiments involve significant time and financial cost, it is appropriate to utilize modeling tools to estimate the behavior of U3Si2 in LWRs based on all those available research reactor experimental references and state-of-the-art density functional theory (DFT) calculation capabilities at the early development stage. Hence, in this report, a comprehensive investigation of the fission gas swelling behavior of U3Si2 at LWR conditions is introduced. The modeling efforts mentioned in this report was based on the rate theory (RT) model of fission gas bubble evolution that has been successfully applied for a variety of fuel materials at devious reactor conditions. Both existing experimental data and DFT-calculated results were used for the optimization of the parameters adopted by the RT model. Meanwhile, the fuel-cladding interaction was captured by the coupling of the RT model with simplified mechanical correlations. Therefore, the swelling behavior of U3Si2 fuel and its consequent interaction with cladding in LWRs was predicted by the rate theory modeling, providing valuable information for the development of U3Si2 fuel as an accident

  17. MANGANESE DIOXIDE METHOD FOR PREPARATION OF PROTACTINIUM

    DOEpatents

    Katzin, L.I.

    1958-08-12

    A method of obtaining U/sup 233/ is described. An aqueous solution of neutriln irradiated thoriunn is treated by forming tberein a precipitate of manganese dioxide which carries and thus separates the Pa/sup 233/ from the solution. The carrier precipitate so formed is then dissolved in an acidic solution containing a reducing agent sufficiently electronegative to reduce the tetravalent manganese to the divalent state. Further purification of the Pa/sup 233/ may be obtained by forming another manganese dioxide carrier precipitate and subsequently dissolving it. Ater a sufficient number of such cycles have brought the Pa/sup 233/ to the desired purity, the solution is aged, allowing the formation ot U/sup 233/ by radioaetive decay. A manganese dioxide precipitate is then formed in the U/sup 233/ containing solution. This precipitate carries down any remaining Pa/sup 233/ thus leaving the separated U/sup 233/solution, from whieh it may be easily recovered.

  18. 21 CFR 184.1461 - Manganese sulfate.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... pale pink, granular, odorless powder. It is obtained by reacting manganese compounds with sulfuric acid... products as defined in § 170.3(n(13) of this chapter; meat products as defined in § 170.3(n)(29) of...

  19. Iron and Manganese Removal by Oxidation

    DTIC Science & Technology

    1978-08-01

    structures. Well 118 is a comparatively highly contaminated water source but is otherwtse representative of RIJA groundwater; a successful treatment process...Evaluation Division Contamination Control C. Love",. Chtef H. Lswless, Chewical Engineer SMM: During eqidzzwtal. treaftiet of gzvroudwater from Well US with...could tolerate one or two ppm manganese, corresponding respectively to conversion levels of 96% and 92% of the original manganese concentration. These

  20. Nanopatterning of metal-coated silicon surfaces via ion beam irradiation: Real time x-ray studies reveal the effect of silicide bonding

    SciTech Connect

    El-Atwani, Osman; Gonderman, Sean; Suslova, Anastassiya; Fowler, Justin; El-Atwani, Mohamad; DeMasi, Alexander; Ludwig, Karl; Paul Allain, Jean

    2013-03-28

    We investigated the effect of silicide formation on ion-induced nanopatterning of silicon with various ultrathin metal coatings. Silicon substrates coated with 10 nm Ni, Fe, and Cu were irradiated with 200 eV argon ions at normal incidence. Real time grazing incidence small angle x-ray scattering (GISAXS) and x-ray fluorescence (XRF) were performed during the irradiation process and real time measurements revealed threshold conditions for nanopatterning of silicon at normal incidence irradiation. Three main stages of the nanopatterning process were identified. The real time GISAXS intensity of the correlated peaks in conjunction with XRF revealed that the nanostructures remain for a time period after the removal of the all the metal atoms from the sample depending on the binding energy of the metal silicides formed. Ex-situ XPS confirmed the removal of all metal impurities. In-situ XPS during the irradiation of Ni, Fe, and Cu coated silicon substrates at normal incidence demonstrated phase separation and the formation of different silicide phases that occur upon metal-silicon mixing. Silicide formation leads to nanostructure formation due the preferential erosion of the non-silicide regions and the weakening of the ion induced mass redistribution.

  1. Manganese recycling in the United States in 1998

    USGS Publications Warehouse

    Jones, Thomas S.

    2001-01-01

    This report describes the flow and processing of manganese within the U.S. economy in 1998 with emphasis on the extent to which manganese is recycled. Manganese was used mostly as an alloying agent in alloys in which it was a minor component. Manganese was recycled mostly within scrap of iron and steel. A small amount was recycled within aluminum used beverage cans. Very little manganese was recycled from materials being recovered specifically for their manganese content. For the United States in 1998, 218,000 metric tons of manganese was estimated to have been recycled from old scrap, of which 96% was from iron and steel scrap. Efficiency of recycling was estimated as 53% and recycling rate as 37%. Metallurgical loss of manganese was estimated to be about 1.7 times that recycled. This loss was mostly into slags from iron and steel production, from which recovery of manganese has yet to be shown economically feasible.

  2. Autonomic function in manganese alloy workers

    SciTech Connect

    Barrington, W.W.; Angle, C.R.; Willcockson, N.K.; Padula, M.A.; Korn, T.

    1998-07-01

    The observation of orthostatic hypotension in an index case of manganese toxicity lead to this prospective attempt to evaluate cardiovascular autonomic function and cognitive and emotional neurotoxicity in eight manganese alloy welders and machinists. The subjects consisted of a convenience sample consisting of an index case of manganese dementia, his four co-workers in a frog shop for gouging, welding, and grinding repair of high manganese railway track and a convenience sample of three mild steel welders with lesser manganese exposure also referred because of cognitive or autonomic symptoms. Frog shop air manganese samples 9.6--10 years before and 1.2--3.4 years after the diagnosis of the index case exceeded 1.0 mg/m{sup 3} in 29% and 0.2 mg/m{sup 3} in 62%. Twenty-four-hour electrocardiographic (Holter) monitoring was used to determine the temporal variability of the heartrate (RR{prime} interval) and the rates of change at low frequency and high frequency. MMPI and MCMI personality assessment and short-term memory, figure copy, controlled oral word association, and symbol digit tests were used.

  3. Manganese mineralogy and diagenesis in the sedimentary rock record

    NASA Astrophysics Data System (ADS)

    Johnson, Jena E.; Webb, Samuel M.; Ma, Chi; Fischer, Woodward W.

    2016-01-01

    Oxidation of manganese (II) to manganese (III,IV) demands oxidants with very high redox potentials; consequently, manganese oxides are both excellent proxies for molecular oxygen and highly favorable electron acceptors when oxygen is absent. The first of these features results in manganese-enriched sedimentary rocks (manganese deposits, commonly Mn ore deposits), which generally correspond to the availability of molecular oxygen in Earth surface environments. And yet because manganese reduction is promoted by a variety of chemical species, these ancient manganese deposits are often significantly more reduced than modern environmental manganese-rich sediments. We document the impacts of manganese reduction and the mineral phases that form stable manganese deposits from seven sedimentary examples spanning from modern surface environments to rocks over 2 billion years old. Integrating redox and coordination information from synchrotron X-ray absorption spectroscopy and X-ray microprobe imaging with scanning electron microscopy and energy and wavelength-dispersive spectroscopy, we find that unlike the Mn(IV)-dominated modern manganese deposits, three manganese minerals dominate these representative ancient deposits: kutnohorite (CaMn(CO3)2), rhodochrosite (MnCO3), and braunite (Mn(III)6Mn(II)O8SiO4). Pairing these mineral and textural observations with previous studies of manganese geochemistry, we develop a paragenetic model of post-depositional manganese mineralization with kutnohorite and calcian rhodochrosite as the earliest diagenetic mineral phases, rhodochrosite and braunite forming secondarily, and later alteration forming Mn-silicates.

  4. The whole-core LEU silicide fuel demonstration in the JMTR

    SciTech Connect

    Aso, Tomokazu; Akashi, Kazutomo; Nagao, Yoshiharu

    1997-08-01

    The JMTR was fully converted to LEU silicide (U{sub 3}Si{sub 2}) fuel with cadmium wires as burnable absorber in January, 1994. The reduced enrichment program for the JMTR was initiated in 1979, and the conversion to MEU (enrichment ; 45%) aluminide fuel was carried out in 1986 as the first step of the program. The final goal of the program was terminated by the present LEU conversion. This paper describes the results of core physics measurement through the conversion phase from MEU fuel core to LEU fuel core. Measured excess reactivities of the LEU fuel cores are mostly in good agreement with predicted values. Reactivity effect and burnup of cadmium wires, therefore, were proved to be well predicted. Control rod worth in the LEU fuel core is mostly less than that in the MEU fuel core. Shutdown margin was verified to be within the safety limit. There is no significant difference in temperature coefficient of reactivity between the MEU and LEU fuel cores. These results verified that the JMTR was successfully and safely converted to LEU fuel. Extension of the operating cycle period was achieved and reduction of spend fuel elements is expected by using the fuel with high uranium density.

  5. Status of core conversion with LEU silicide fuel in JRR-4

    SciTech Connect

    Nakajima, Teruo; Ohnishi, Nobuaki; Shirai, Eiji

    1997-08-01

    Japan Research Reactor No.4 (JRR-4) is a light water moderated and cooled, 93% enriched uranium ETR-type fuel used and swimming pool type reactor with thermal output of 3.5MW. Since the first criticality was achieved on January 28, 1965, JRR-4 has been used for shielding experiments, radioisotope production, neutron activation analyses, training for reactor engineers and so on for about 30 years. Within the framework of the RERTR Program, the works for conversion to LEU fuel are now under way, and neutronic and thermal-hydraulic calculations emphasizing on safety and performance aspects are being carried out. The design and evaluation for the core conversion are based on the Guides for Safety Design and Evaluation of research and testing reactor facilities in Japan. These results show that the JRR-4 will be able to convert to use LEU fuel without any major design change of core and size of fuel element. LEU silicide fuel (19.75%) will be used and maximum neutron flux in irradiation hole would be slightly decreased from present neutron flux value of 7x10{sup 13}(n/cm{sup 2}/s). The conversion works are scheduled to complete in 1998, including with upgrade of the reactor building and utilization facilities.

  6. Magnesium silicide nanoparticles as a deoxygenation agent for cancer starvation therapy

    NASA Astrophysics Data System (ADS)

    Zhang, Chen; Ni, Dalong; Liu, Yanyan; Yao, Heliang; Bu, Wenbo; Shi, Jianlin

    2017-05-01

    A material that rapidly absorbs molecular oxygen (known as an oxygen scavenger or deoxygenation agent (DOA)) has various industrial applications, such as in food preservation, anticorrosion of metal and coal deoxidation. Given that oxygen is vital to cancer growth, to starve tumours through the consumption of intratumoral oxygen is a potentially useful strategy in fighting cancer. Here we show that an injectable polymer-modified magnesium silicide (Mg2Si) nanoparticle can act as a DOA by scavenging oxygen in tumours and form by-products that block tumour capillaries from being reoxygenated. The nanoparticles are prepared by a self-propagating high-temperature synthesis strategy. In the acidic tumour microenvironment, the Mg2Si releases silane, which efficiently reacts with both tissue-dissolved and haemoglobin-bound oxygen to form silicon oxide (SiO2) aggregates. This in situ formation of SiO2 blocks the tumour blood capillaries and prevents tumours from receiving new supplies of oxygen and nutrients.

  7. Magnetic phase transitions in LaMn 2- xFe xSi 2 silicides

    NASA Astrophysics Data System (ADS)

    Kervan, S.; Kılıç, A.; Özcan, Ş.; Gencer, A.

    2004-04-01

    The magnetic phase transitions in LaMn2-xFexSi2 (0.0≤x≤1.0) silicides were studied by X-ray diffraction, differential scanning calorimetry techniques and AC magnetic susceptibility measurements. All compounds crystallize in the ThCr2Si2-type structure with the space group I4/mmm. The lattice constants and the unit cell volume obey Vegard's law. For the samples with x≤0.4, the ferromagnetic interactions within the Mn sublattice occurs below the Curie temperature (TC(Mn)). The Curie temperature was depressed linearly by the substitution of Fe for Mn. The temperature dependence of the AC susceptibility shows a distinct feature for the samples with x≤0.3 below TC(Mn). These samples have a mixed state composed of ferromagnetic and anti-ferromagnetic phases. The samples with x≧0.6 have the Néel temperature below the room temperature, while the other samples are anti-ferromagnetic above the room temperature. The results lead to the construction of the partial magnetic phase diagram.

  8. Low-field magnetic behavior of LaMn2-xNixSi2 silicides

    NASA Astrophysics Data System (ADS)

    Gencer, A.; Klç, A.; Kervan, S.

    2004-12-01

    We have performed X-ray diffraction (XRD) and AC magnetic susceptibility measurements on polycrystalline LaMn2-xNixSi2 (0.0 x 2.0) silicides for magnetic characterization in fields of about a few Oe at a temperature range 15-325 K. All compounds crystallize in the naturally layered ThCr2Si2-type structure with the space group I4/mmm. Substitution of Ni for Mn leads to a linear decrease in the lattice constant c and the unit cell volume, while it gives rise to a change of magnetic properties from ferromagnetic to anti-ferromagnetic behavior for small values of x < 1. The sample with x = 0.8 has a Néel temperature of about 35 K, associated with anti-ferromagnetic behavior. However, for x = 1, anti-ferromagnetic behavior is diminished and paramagnetic behavior becomes dominant. For x = 2, the sample becomes virtually non-magnetic. The samples with x ≤ 0.5 exhibit mixed magnetic properties composed of ferromagnetic and anti-ferromagnetic interactions, below the Curie temperature TC(Mn). The results are collected in the magnetic phase diagram.

  9. A magnetic study of LaMn 2- xCo xSi 2 silicides

    NASA Astrophysics Data System (ADS)

    Kervan, S.; Kılıç, A.; Gencer, A.

    2004-06-01

    X-ray diffraction (XRD) and AC magnetic susceptibility measurements have been performed on polycrystalline LaMn 2- xCo xSi 2 (0.0⩽ x⩽1.0) silicides to investigate how the ferromagnetic interactions in LaMn 2Si 2 are affected by Co substitution. All the compounds crystallize in the naturally layered ThCr 2Si 2-type structure with the space group I4/mmm. Substitution of Co for Mn leads to a linear decrease in the lattice constants and also the unit cell volume. For the samples with x⩽0.4, a ferromagnetic ordering within the Mn sublattice occurs below the Curie temperature TC(Mn). TC(Mn) decreases with the cobalt content from 310 K ( x=0) to 186 K ( x=0.4). For the samples with x⩽0.3, the temperature dependence of the AC susceptibility shows a distinct feature below TC(Mn). These samples have a mixed state composed of ferromagnetic and anti-ferromagnetic phases. The samples with x=0.6 and have the Néel temperature associated with anti-ferromagnetic behavior. The results are collected in the partial magnetic phase diagram.

  10. Connecting structural, mechanical and tribological characteristics of Al alloyed nanocrystalline molybdenum silicide coatings

    NASA Astrophysics Data System (ADS)

    Xu, Jiang; Mao, XiangZhen; Xie, Zong-Han; Munroe, Paul

    2013-02-01

    In this study, novel nanocrystalline molybdenum silicide coatings with differing Al contents were deposited on a commercial titanium substrate using a double-cathode glow discharge apparatus. Their microstructures were characterized by x-ray diffraction, scanning electron microscopy (SEM) and transmission electron microscopy. These coatings mainly consisted of MoSi2 and Mo5Si3 phases; the ratio of Mo5Si3 to MoSi2 gradually increased from the surface towards the interior of coatings, forming a graded structure. With the increase in Al content, the hardness and elastic modulus of the coatings slightly decreased, but the ratios of H/E and 1/E2H, as well as damage tolerance, increased. Furthermore, these newly developed coatings showed excellent wear resistance; their specific wear rates were not only considerably lower than that of the monolithic MoSi2 coating, but also decreased with increasing Al content. The plan and cross-sectional views of the worn surfaces and wear debris were analysed using SEM and energy dispersive x-ray spectroscopy. The relationships between coating structure, mechanical property and wear mechanism were then clarified, which will help in designing hard, tough and wear-resistant coatings for applications involving severe loading conditions.

  11. Electron Probe Microanalysis of Ni Silicides Using Ni-L X-Ray Lines.

    PubMed

    Llovet, Xavier; Pinard, Philippe T; Heikinheimo, Erkki; Louhenkilpi, Seppo; Richter, Silvia

    2016-12-01

    We report electron probe microanalysis measurements on nickel silicides, Ni5Si2, Ni2Si, Ni3Si2, and NiSi, which were done in order to investigate anomalies that affect the analysis of such materials by using the Ni L3-M4,5 line (Lα). Possible sources of systematic discrepancies between experimental data and theoretical predictions of Ni L3-M4,5 k-ratios are examined, and special attention is paid to dependence of the Ni L3-M4,5 k-ratios on mass-attenuation coefficients and partial fluorescence yields. Self-absorption X-ray spectra and empirical mass-attenuation coefficients were obtained for the considered materials from X-ray emission spectra and relative X-ray intensity measurements, respectively. It is shown that calculated k-ratios with empirical mass attenuation coefficients and modified partial fluorescence yields give better agreement with experimental data, except at very low accelerating voltages. Alternatively, satisfactory agreement is also achieved by using the Ni L3-M1 line (Lℓ) instead of the Ni L3-M4,5 line.

  12. Experimental studies of thermal and chemical interactions between oxide and silicide nuclear fuels with water

    SciTech Connect

    farahani, A.A.; Corradini, M.L.

    1995-09-01

    Given some transient power/cooling mismatch is a nuclear reactor and its inability to establish the necessary core cooling, energetic fuel-coolant interactions (FCI`s commonly called `vapor explosions`) could occur as a result of the core melting and coolant contact. Although a large number of studies have been done on energetic FCI`s, very few experiments have been performed with the actual fuel materials postulated to be produced in severe accidents. Because of the scarcity of well-characterized FCI data for uranium allows in noncommercial reactors (cermet and silicide fuels), we have conducted a series of experiments to provide a data base for the foregoing materials. An existing 1-D shock-tube facility was modified to handle depleted radioactive materials (U{sub 3}O{sub 8}-Al, and U{sub 3}Si{sub 2}-Al). Our objectives have been to determine the effects of the initial fuel composition and temperature and the driving pressure (triggering) on the explosion work output, dynamic pressures, transient temperatures, and the hydrogen production. Experimental results indicate limited energetics, mainly thermal interactions, for these fuel materials as compared to aluminum where more chemical reactions occur between the molten aluminum and water.

  13. Unidirectional endotaxial cobalt di-silicide nanowires on Si(110) substrates

    NASA Astrophysics Data System (ADS)

    Mahato, J. C.; Das, Debolina; Banu, Nasrin; Satpati, Biswarup; Dev, B. N.

    2017-10-01

    Self-organized growth of well-ordered endotaxial silicide nanowires (NWs) on clean Si(110) surfaces has been investigated by in situ scanning tunneling microscopy (STM) and transmission electron microscopy (TEM). Co deposition on clean Si(110) reconstructed surfaces at ∼600 °C produces unidirectional CoSi2 NWs by reaction of cobalt with the hot silicon substrate. STM investigations reveal four major types of distinct NWs, all growing along the [-110] in-plane direction except one type growing along the in-plane [-113] direction. There are also some nanodots. The cross-sectional TEM measurements show that the unidirectional NWs are of two types—flat-top and ridged. The NWs grow not only on the substrate but also into the substrate. CoSi2 in flat top NWs are in the same crystallographic orientation as the substrate Si and the buried interfaces between CoSi2 and Si are A-type. In the ridged NWs CoSi2 and Si are in different crystallographic orientations and the interfaces are B-type. The ridged NWs are in general wider and grow deeper into the substrate.

  14. Aluminum silicide microparticles transformed from aluminum thin films by hypoeutectic interdiffusion

    PubMed Central

    2014-01-01

    Aluminum silicide microparticles with oxidized rough surfaces were formed on Si substrates through a spontaneous granulation process of Al films. This microparticle formation was caused by interdiffusion of Al and Si atoms at hypoeutectic temperatures of Al-Si systems, which was driven by compressive stress stored in Al films. The size, density, and the composition of the microparticles could be controlled by adjusting the annealing temperature, time, and the film thickness. High-density microparticles of a size around 10 μm and with an atomic ratio of Si/Al of approximately 0.8 were obtained when a 90-nm-thick Al film on Si substrate was annealed for 9 h at 550°C. The microparticle formation resulted in a rapid increase of the sheet resistance, which is a consequence of substantial consumption of Al film. This simple route to size- and composition-controllable microparticle formation may lay a foundation stone for the thermoelectric study on Al-Si alloy-based heterogeneous systems. PMID:24994964

  15. Oxidation behavior of niobium aluminide intermetallics protected by aluminide and silicide diffusion coatings

    SciTech Connect

    Li, Y.; Soboyejo, W.; Rapp, R.A.

    1999-06-01

    The isothermal and cyclic oxidation behavior of a new class of damage-tolerant niobium aluminide (Nb{sub 3}Al-xTi-yCr) intermetallics is studied between 650 C and 850 C. Protective diffusion coatings were deposited by pack cementation to achieve the siliciding or aluminizing of substrates with or without intervening Mo or Ni layers, respectively. The compositions and microstructures of the resulting coatings and oxidized surfaces were characterized. The isothermal and cyclic oxidation kinetics indicate that uncoated Nb-40Ti-15Al-based intermetallics may be used up to {approximately}750 C. Alloying with Cr improves the isothermal oxidation resistance between 650 C and 850 C. The most significant improvement in oxidation resistance is achieved by the aluminization of electroplated Ni interlayers. The results suggest that the high-temperature limit of niobium aluminide-based alloys may be increased to 800 C to 850 C by aluminide-based diffusion coatings on ductile Ni interlayers. Indentation fracture experiments also indicate that the ductile nickel interlayers are resistant to crack propagation in multilayered aluminide-based coatings.

  16. The ability of silicide coating to delay the catastrophic oxidation of vanadium under severe conditions

    NASA Astrophysics Data System (ADS)

    Chaia, N.; Mathieu, S.; Rouillard, F.; Vilasi, M.

    2015-02-01

    V-4Cr-4Ti vanadium alloy is a potential cladding material for sodium-cooled fast-neutron reactors (SFRs). However, its affinity for oxygen and the subsequent embrittlement that oxygen induces causes a need for an oxygen diffusion barrier, which can be obtained by manufacturing a multi-layered silicide coating. The present work aims to evaluate the effects of thermal cycling (using a cyclic oxidation device) and tensile and compressive stresses (using the three-point flexure test) on the coated alloy system. Tests were performed in air up to 1100 °C, which is 200 °C higher than the accidental temperature for SFR applications. The results showed that the VSi2 coating was able to protect the vanadium substrate from oxidation for more than 400 1-h cycles between 1100 °C and room temperature. The severe bending applied to the coated alloy at 950 °C using a load of 75 MPa did not lead to specimen breakage. It can be suggested that the VSi2 coating has mechanical properties compatible with the V-4Cr-4Ti alloy for SFR applications.

  17. Mesoscale Evaluation of Titanium Silicide Monolayer as a Cathode Host Material in Lithium-Sulfur Batteries

    NASA Astrophysics Data System (ADS)

    Liu, Zhixiao; Balbuena, Perla B.; Mukherjee, Partha P.

    2017-06-01

    Two-dimensional materials are competitive candidates as cathode materials in lithium-sulfur batteries for immobilizing soluble polysulfides and mitigating the shuttle effect. In this study, a mesoscale modeling approach, which combines first-principles simulation and kinetic Monte Carlo simulation, is employed to evaluate titanium silicide (Ti2Si and TiSi2) monolayers as potential host materials in lithium-sulfur batteries. It is found that the Ti2Si monolayer has much stronger affinities to Li2S x (x = 1, 2, 4) molecules than does the TiSi2 monolayer. Also, Ti2Si can facilitate the dissociation of long-chain Li2S4 to LiS2. On the other hand, TiSi2 can only provide a weak chemical interaction for trapping soluble Li2S4. Therefore, the Ti2Si monolayer can be considered to be the next-generation cathode material for lithium-sulfur batteries. Nevertheless, the strong interaction between Ti2Si and Li2S also causes fast surface passivation. How to control the Li2S precipitation on Ti2Si should be answered by future studies.

  18. Phase diagram and electrical behavior of silicon-rich iridium silicide compounds

    NASA Technical Reports Server (NTRS)

    Allevato, C. E.; Vining, Cronin B.

    1992-01-01

    The iridium-silicon phase diagram on the silicon-rich side was investigated by means of X-ray powder diffraction, density, differential thermal analysis, metalography, microprobe analysis, and electrical resistivity. Attempts were made to prepare eight previously reported silicon-rich iridium silicide compounds by arc melting and Bridgman-like growth. However, microprobe analysis identified only four distinct compositions: IrSi, Ir3Si4, Ir3Si5 and IrSi sub about 3. The existence of Ir4Si5 could not be confirmed in this study, even though the crystal structure has been previously reported. Differential thermal analysis (DTA) in conjunction with X-ray powder diffraction confirm polymorphism in IrSi sub about 3, determined to have orthorhombic and monoclinic unit cells in the high and low temperature forms. A eutectic composition alloy of 83 +/- 1 atomic percent silicon was observed between IrSi sub about 3 and silicon. Ir3Si4 exhibits distinct metallic behavior while Ir3Si5 is semiconducting. Both and IrSi and IrSi sub about 3 exhibit nearly temperature independent electrical resistivities on the order of 5-10 x 10 exp -6 ohms-m.

  19. Influence of mechanical grinding on lithium insertion and extraction properties of iron silicide/silicon composites

    NASA Astrophysics Data System (ADS)

    Usui, Hiroyuki; Nouno, Kazuma; Takemoto, Yuya; Nakada, Kengo; Ishii, Akira; Sakaguchi, Hiroki

    2014-12-01

    We prepared composite electrodes of iron silicide/Si by using mechanical grinding for mixtures of ferrosilicon and Si followed by gas-deposition, and investigated their electrochemical properties as Li-ion battery anode. With increasing the mechanical grinding time, the phase transformation from FeSi to FeSi2 took place more significantly, and the composite electrode showed better cycle stabilities. There was no remarkable difference in mechanical properties and electronic conductivity between FeSi and FeSi2. On the other hand, the FeSi2 electrode exhibited about three times larger capacities in comparison with the FeSi electrode. In addition, a result of our first principle calculation indicates that Li-ion can diffuse more easily in FeSi2 lattice than in FeSi lattice. It is suggested that the better cyclability of the composite electrodes was attributed to the moderate reactivity of FeSi2 with Li and the smooth Li-ion diffusion in it.

  20. Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

    NASA Technical Reports Server (NTRS)

    Mahan, John E.

    1989-01-01

    Polycrystalline thin films of CrSi2, LaSi2, and ReSi2 were grown on silicon substrates. Normal incidence optical transmittance and reflectance measurements were made as a function of wavelength. It was demonstrated that LaSi2 is a metallic conductor, but that CrSi2 and ReSi2 are, in fact, narrow bandgap semiconductors. For CrSi2, the complex index of refraction was determined by computer analysis of the optical data. From the imaginary part, the optical absorption coefficient was determined as a function of photon energy. It was shown that CrSi2 possesses an indirect forbidden energy gap of slightly less than 0.31 eV, and yet it is a very strong absorber of light above the absorption edge. On the other hand, the ReSi2 films exhibit an absorption edge in the vicinity of 0.2 eV. Measurements of the thermal activation energy of resistivity for ReSi2 indicate a bandgap of 0.18 eV. It is concluded that the semiconducting silicides merit further investigation for development as new silicon-compatible infrared detector materials.

  1. Mesoscale Evaluation of Titanium Silicide Monolayer as a Cathode Host Material in Lithium-Sulfur Batteries

    NASA Astrophysics Data System (ADS)

    Liu, Zhixiao; Balbuena, Perla B.; Mukherjee, Partha P.

    2017-09-01

    Two-dimensional materials are competitive candidates as cathode materials in lithium-sulfur batteries for immobilizing soluble polysulfides and mitigating the shuttle effect. In this study, a mesoscale modeling approach, which combines first-principles simulation and kinetic Monte Carlo simulation, is employed to evaluate titanium silicide (Ti2Si and TiSi2) monolayers as potential host materials in lithium-sulfur batteries. It is found that the Ti2Si monolayer has much stronger affinities to Li2S x ( x = 1, 2, 4) molecules than does the TiSi2 monolayer. Also, Ti2Si can facilitate the dissociation of long-chain Li2S4 to LiS2. On the other hand, TiSi2 can only provide a weak chemical interaction for trapping soluble Li2S4. Therefore, the Ti2Si monolayer can be considered to be the next-generation cathode material for lithium-sulfur batteries. Nevertheless, the strong interaction between Ti2Si and Li2S also causes fast surface passivation. How to control the Li2S precipitation on Ti2Si should be answered by future studies.

  2. A Computational Study on the Ground and Excited States of Nickel Silicide.

    PubMed

    Schoendorff, George; Morris, Alexis R; Hu, Emily D; Wilson, Angela K

    2015-09-17

    Nickel silicide has been studied with a range of computational methods to determine the nature of the Ni-Si bond. Additionally, the physical effects that need to be addressed within calculations to predict the equilibrium bond length and bond dissociation energy within experimental error have been determined. The ground state is predicted to be a (1)Σ(+) state with a bond order of 2.41 corresponding to a triple bond with weak π bonds. It is shown that calculation of the ground state equilibrium geometry requires a polarized basis set and treatment of dynamic correlation including up to triple excitations with CR-CCSD(T)L resulting in an equilibrium bond length of only 0.012 Å shorter than the experimental bond length. Previous calculations of the bond dissociation energy resulted in energies that were only 34.8% to 76.5% of the experimental bond dissociation energy. It is shown here that use of polarized basis sets, treatment of triple excitations, correlation of the valence and subvalence electrons, and a Λ coupled cluster approach is required to obtain a bond dissociation energy that deviates as little as 1% from experiment.

  3. Synthesis and characterization of barium silicide (BaSi2) nanowire arrays for potential solar applications.

    PubMed

    Pokhrel, Ankit; Samad, Leith; Meng, Fei; Jin, Song

    2015-11-07

    In order to utilize nanostructured materials for potential solar and other energy-harvesting applications, scalable synthetic techniques for these materials must be developed. Herein we use a vapor phase conversion approach to synthesize nanowire (NW) arrays of semiconducting barium silicide (BaSi2) in high yield for the first time for potential solar applications. Dense arrays of silicon NWs obtained by metal-assisted chemical etching were converted to single-crystalline BaSi2 NW arrays by reacting with Ba vapor at about 930 °C. Structural characterization by X-ray diffraction and high-resolution transmission electron microscopy confirm that the converted NWs are single-crystalline BaSi2. The optimal conversion reaction conditions allow the phase-pure synthesis of BaSi2 NWs that maintain the original NW morphology, and tuning the reaction parameters led to a controllable synthesis of BaSi2 films on silicon substrates. The optical bandgap and electrochemical measurements of these BaSi2 NWs reveal a bandgap and carrier concentrations comparable to previously reported values for BaSi2 thin films.

  4. Absorption Amelioration of Amorphous Si Film by Introducing Metal Silicide Nanoparticles.

    PubMed

    Sun, Hui; Wu, Hsuan-Chung; Chen, Sheng-Chi; Ma Lee, Che-Wei; Wang, Xin

    2017-12-01

    Amorphous Si (a-Si) films with metal silicide are expected to enhance the absorption ability of pure a-Si films. In this present study, NiSi (20 nm)/Si (40 nm) and AlSi (20 nm)/Si (40 nm) bilayer thin films are deposited through radio frequency (RF) sputtering at room temperature. The influence of the film's composition and the annealing temperature on the film's optical absorption is investigated. The results show that all the NiSi/Si films and AlSi/Si films possess higher absorption ability compared to a pure a-Si film (60 nm). After annealing from 400 to 600 °C under vacuum for 1 h, the Si layer remains amorphous in both NiSi/Si films and AlSi/Si films, while the NiSi layer crystallizes into NiSi2 phase, whereas Al atoms diffuse through the whole film during the annealing process. Consequently, with increasing the annealing temperature, the optical absorption of NiSi/Si films increases, while that of AlSi/Si films obviously degrades.

  5. Ion-beam nanopatterning of silicon surfaces under codeposition of non-silicide-forming impurities

    NASA Astrophysics Data System (ADS)

    Moon, B.; Yoo, S.; Kim, J.-S.; Kang, S. J.; Muñoz-García, J.; Cuerno, R.

    2016-03-01

    We report experiments on surface nanopatterning of Si targets which are irradiated with 2-keV Ar+ ions impinging at near-glancing incidence, under concurrent codeposition of Au impurities simultaneously extracted from a gold target by the same ion beam. Previous recent experiments by a number of groups suggest that silicide formation is a prerequisite for pattern formation in the presence of metallic impurities. In spite of the fact that Au is known not to form stable compounds with the Si atoms, ripples nonetheless emerge in our experiments with nanometric wavelengths and small amplitudes, and with an orientation that changes with distance to the Au source. We provide results of sample analysis through Auger electron and energy-dispersive x-ray spectroscopies for their space-resolved chemical composition, and through atomic force, scanning transmission electron, and high-resolution transmission microscopies for their morphological properties. We discuss these findings in the light of current continuum models for this class of systems. The composition of and the dynamics within the near-surface amorphized layer that ensues is expected to play a relevant role to account for the unexpected formation of these surface structures.

  6. Phase diagram and electrical behavior of silicon-rich iridium silicide compounds

    NASA Technical Reports Server (NTRS)

    Allevato, C. E.; Vining, Cronin B.

    1992-01-01

    The iridium-silicon phase diagram on the silicon-rich side was investigated by means of X-ray powder diffraction, density, differential thermal analysis, metalography, microprobe analysis, and electrical resistivity. Attempts were made to prepare eight previously reported silicon-rich iridium silicide compounds by arc melting and Bridgman-like growth. However, microprobe analysis identified only four distinct compositions: IrSi, Ir3Si4, Ir3Si5 and IrSi sub about 3. The existence of Ir4Si5 could not be confirmed in this study, even though the crystal structure has been previously reported. Differential thermal analysis (DTA) in conjunction with X-ray powder diffraction confirm polymorphism in IrSi sub about 3, determined to have orthorhombic and monoclinic unit cells in the high and low temperature forms. A eutectic composition alloy of 83 +/- 1 atomic percent silicon was observed between IrSi sub about 3 and silicon. Ir3Si4 exhibits distinct metallic behavior while Ir3Si5 is semiconducting. Both and IrSi and IrSi sub about 3 exhibit nearly temperature independent electrical resistivities on the order of 5-10 x 10 exp -6 ohms-m.

  7. Biogeochemical cycling of manganese in Oneida Lake, New York: whole lake studies of manganese

    NASA Technical Reports Server (NTRS)

    Aguilar, C.; Nealson, K. H.

    1998-01-01

    Oneida Lake, New York is a eutrophic freshwater lake known for its abundant manganese nodules and a dynamic manganese cycle. Temporal and spatial distribution of soluble and particulate manganese in the water column of the lake were analyzed over a 3-year period and correlated with other variables such as oxygen, pH, and temperature. Only data from 1988 are shown. Manganese is removed from the water column in the spring via conversion to particulate form and deposited in the bottom sediments. This removal is due to biological factors, as the lake Eh/pH conditions alone can not account for the oxidation of the soluble manganese Mn(II). During the summer months the manganese from microbial reduction moves from the sediments to the water column. In periods of stratification the soluble Mn(II) builds up to concentrations of 20 micromoles or more in the bottom waters. When mixing occurs, the soluble Mn(II) is rapidly removed via oxidation. This cycle occurs more than once during the summer, with each manganese atom probably being used several times for the oxidation of organic carbon. At the end of the fall, whole lake concentrations of manganese stabilize, and remain at about 1 micromole until the following summer, when the cycle begins again. Inputs and outflows from the lake indicate that the active Mn cycle is primarily internal, with a small accumulation each year into ferromanganese nodules located in the oxic zones of the lake.

  8. Electrokinetic remediation of manganese and ammonia nitrogen from electrolytic manganese residue.

    PubMed

    Shu, Jiancheng; Liu, Renlong; Liu, Zuohua; Du, Jun; Tao, Changyuan

    2015-10-01

    Electrolytic manganese residue (EMR) is a solid waste found in filters after sulphuric acid leaching of manganese carbonate ore, which mainly contains manganese and ammonia nitrogen and seriously damages the ecological environment. This work demonstrated the use of electrokinetic (EK) remediation to remove ammonia nitrogen and manganese from EMR. The transport behavior of manganese and ammonia nitrogen from EMR during electrokinetics, Mn fractionation before and after EK treatment, the relationship between Mn fractionation and transport behavior, as well as the effects of electrolyte and pretreatment solutions on removal efficiency and energy consumption were investigated. The results indicated that the use of H2SO4 and Na2SO4 as electrolytes and pretreatment of EMR with citric acid and KCl can reduce energy consumption, and the removal efficiencies of manganese and ammonia nitrogen were 27.5 and 94.1 %, respectively. In these systems, electromigration and electroosmosis were the main mechanisms of manganese and ammonia nitrogen transport. Moreover, ammonia nitrogen in EMR reached the regulated level, and the concentration of manganese in EMR could be reduced from 455 to 37 mg/L. In general, the electrokinetic remediation of EMR is a promising technology in the future.

  9. Biogeochemical cycling of manganese in Oneida Lake, New York: whole lake studies of manganese

    NASA Technical Reports Server (NTRS)

    Aguilar, C.; Nealson, K. H.

    1998-01-01

    Oneida Lake, New York is a eutrophic freshwater lake known for its abundant manganese nodules and a dynamic manganese cycle. Temporal and spatial distribution of soluble and particulate manganese in the water column of the lake were analyzed over a 3-year period and correlated with other variables such as oxygen, pH, and temperature. Only data from 1988 are shown. Manganese is removed from the water column in the spring via conversion to particulate form and deposited in the bottom sediments. This removal is due to biological factors, as the lake Eh/pH conditions alone can not account for the oxidation of the soluble manganese Mn(II). During the summer months the manganese from microbial reduction moves from the sediments to the water column. In periods of stratification the soluble Mn(II) builds up to concentrations of 20 micromoles or more in the bottom waters. When mixing occurs, the soluble Mn(II) is rapidly removed via oxidation. This cycle occurs more than once during the summer, with each manganese atom probably being used several times for the oxidation of organic carbon. At the end of the fall, whole lake concentrations of manganese stabilize, and remain at about 1 micromole until the following summer, when the cycle begins again. Inputs and outflows from the lake indicate that the active Mn cycle is primarily internal, with a small accumulation each year into ferromanganese nodules located in the oxic zones of the lake.

  10. Autonomic function in manganese alloy workers.

    PubMed

    Barrington, W W; Angle, C R; Willcockson, N K; Padula, M A; Korn, T

    1998-07-01

    The observation of orthostatic hypotension in an index case of manganese toxicity lead to this prospective attempt to evaluate cardiovascular autonomic function and cognitive and emotional neurotoxicity in eight manganese alloy welders and machinists. The subjects consisted of a convenience sample consisting of an index case of manganese dementia, his four co-workers in a "frog shop" for gouging, welding, and grinding repair of high manganese railway track and a convenience sample of three mild steel welders with lesser manganese exposure also referred because of cognitive or autonomic symptoms. Frog shop air manganese samples 9.6-10 years before and 1.2-3.4 years after the diagnosis of the index case exceeded 1.0 mg/m3 in 29% and 0.2 mg/m3 in 62%. Twenty-four-hour electrocardiographic (Holter) monitoring was used to determine the temporal variability of the heartrate (RR' interval) and the rates of change at low frequency (0.04-0.15 Hz) and high frequency (0.15-0.40 Hz). MMPI and MCMI personality assessment and short-term memory, figure copy, controlled oral word association, and symbol digit tests were used. The five frog shop workers had abnormal sympathovagal balance with decreased high frequency variability (increased ln LF/ln HF). Seven of the eight workers had symptoms of autonomic dysfunction and significantly decreased heart rate variability (rMSSD) but these did not distinguish the relative exposure. Mood or affect was disturbed in all with associated changes in short-term memory and attention in four of the subjects. There were no significant correlations with serum or urine manganese. Power spectrum analysis of 24-h ambulatory ECG indicating a decrease in parasympathetic high frequency activation of heart rate variability may provide a sensitive index of central autonomic dysfunction reflecting increased exposure to manganese, although the contribution of exposures to solvents and other metals cannot be excluded. Neurotoxicity due to the gouging

  11. Leaching of manganese from electrolytic manganese residue by electro-reduction.

    PubMed

    Shu, Jiancheng; Liu, Renlong; Liu, Zuohua; Chen, Hongliang; Tao, Changyuan

    2017-08-01

    In this study, an improved process for leaching manganese from electrolytic manganese residue (EMR) by electro-reduction was developed. The mechanisms of the electro-reduction leaching were investigated through X-ray diffraction, scanning electron microscopy, X-ray fluorescence, and Brunauer Emmett Teller. The results show that the electric field could change the surface charge distribution of EMR particles, and the high-valent manganese can be reduced by electric field. The leaching efficient of manganese reached 84.1% under the optimal leaching condition: 9.2 wt% H2SO4, current density of 25 mA/cm(2), solid-to-liquid ratio of 1:5, and leaching time for 1 h. It is 37.9% higher than that attained without an electric field. Meanwhile, the manganese content in EMR decreased from 2.57% to 0.48%.

  12. Study of high performance alloy electroforming. [nickel manganese and nickel cobalt manganese alloys

    NASA Technical Reports Server (NTRS)

    Malone, G. A.

    1984-01-01

    Nickel-manganese alloy electrodeposits from an electrolyte containing more manganese ion than previously used is being evaluated at two bath operating temperatures with a great variety of pulse plating conditions. Saccharine was added as a stress reducing agent for the electroforming of several of the samples with highest manganese content. All specimens for mechanical property testing have been produced but are not through the various heat treatments as yet. One of the heat treatment will be at 343 C (650 F), the temperature at which the MCC outer electroformed nickel shell is stress relieved. A number of retainer specimens from prior work have been tested for hardness before and after heat treatment. There appears to be a fairly good correlation between hardness and mechanical properties. Comparison of representative mechanical properties with hardnesses are made for nickel-manganese electrodeposits and nickel-cobalt-manganese deposits.

  13. Quaternary aluminum silicides grown in Al flux: RE5Mn4Al(23-x)Si(x) (RE = Ho, Er, Yb) and Er44Mn55(AlSi)237.

    PubMed

    Calta, Nicholas P; Kanatzidis, Mercouri G

    2013-09-03

    Four novel intermetallic silicides, RE5Mn4Al(23-x)Si(x) (x = 7.9(9), RE = Ho, Er, Yb) and Er44Mn55(AlSi)237, have been prepared by reaction in aluminum flux. Three RE5Mn4Al(23-x)Si(x) compounds crystallize in the tetragonal space group P4/mmm with the relatively rare Gd5Mg5Fe4Al(18-x)Si(x) structure type. Refinement of single-crystal X-ray diffraction data yielded unit cell parameters of a = 11.3834(9)-11.4171(10) Å and c = 4.0297(2)-4.0575(4) Å with volumes ranging from 522.41(5) to 528.90(8) Å(3). Structure refinements on single-crystal diffraction data show that Er44Mn55(AlSi)237 adopts a new cubic structure type in the space group Pm3n with a very large unit cell edge of a = 21.815(3) Å. This new structure is best understood when viewed as two sets of nested polyhedra centered on a main group atom and a manganese atom. These polyhedral clusters describe the majority of the atomic positions in the structure and form a perovskite-type network. We also report the electrical and magnetic properties of the title compounds. All compounds except the Ho analogue behave as normal paramagnetic metals without any observed magnetic transitions above 5 K and exhibit antiferromagnetic correlations deduced from the value of their Curie constants. Ho5Mn4Al(23-x)Si(x) exhibits a ferromagnetic transition at 20 K and an additional metamagnetic transition at 10 K, suggesting independent ordering temperatures for two distinct magnetic sublattices.

  14. The new ternary silicide Gd{sub 5}CoSi{sub 2}: Structural, magnetic and magnetocaloric properties

    SciTech Connect

    Mayer, Charlotte; Gaudin, Etienne; Gorsse, Stephane; Chevalier, Bernard

    2011-02-15

    Gd{sub 5}CoSi{sub 2} was prepared by annealing at 1003 K. Its investigation by the X-ray powder diffraction shows that the ternary silicide crystallizes in a tetragonal structure deriving from the Cr{sub 5}B{sub 3}-type (I4/mcm space group; a=7.5799(4) and c=13.5091(12) A as unit cell parameters). The Rietveld refinement shows a mixed occupancy on the (8h) site between Si and Co atoms. Magnetization and specific heat measurements performed on Gd{sub 5}CoSi{sub 2} reveal a ferromagnetic behaviour below T{sub C}=168 K. This magnetic ordering is associated to an interesting magnetocaloric effect; the adiabatic temperature change {Delta}T{sub ad} is about 3.1 and 5.9 K, respectively, for a magnetic field change of 2 and 4.6 T. -- Graphical abstract: The adiabatic temperature change {Delta}T{sub ad} was determined by combining the heat capacity measurements and the magnetization data. As expected, a peak near the Curie temperature of the Gd{sub 5}CoSi{sub 2} ternary silicide is observed, with a maximum of {Delta}T{sub ad} around 3.1 and 5.9 K for {Delta}H=2 and 4.6 T, respectively. Display Omitted Research Highlights: {yields} We prepare and characterize for the first time the ternary silicide Gd{sub 5}CoSi{sub 2}. {yields} Gd{sub 5}CoSi{sub 2} crystallizes in the tetragonal structure deriving from the Cr{sub 5}B{sub 3}-type. {yields} Gd{sub 5}CoSi{sub 2} shows a ferromagnetic behaviour below 168 K associated with magnetocaloric properties.

  15. Comparing the electrical characteristics and reliabilities of BJTs and MOSFETs between Pt and Ti contact silicide processes

    NASA Astrophysics Data System (ADS)

    Liu, Kaiping; Shang, Ling

    1999-08-01

    The sub-threshold characteristics and the reliability of BJTs, using platinum contact silicide (PtSi) or titanium contact silicide (TiSi2), are compared and analyzed. During processing, it is observed that the TiSi2 process produces higher interface state density (Dit) than the PtSi process. The increase in Dit not only leads to a higher base current in the BJTs, but also leads to a lower transconductance for the MOS transistors. The data also show that the impact on NPN and nMOS is more severe than the impact of PNP and pMOS, respectively. This can be explained by the non-symmetric interface state distribution, the re- activation of boron, and/or by substrate trap centers. The amount of interface states produced depends not only on the thickness of the titanium film deposited, but also on the temperature and duration of the titanium silicide process. The electrical data indicates that after all the Back-End- Of-The-Line processing steps, which includes a forming gas anneal, Dit is still higher on wafers with the TiSi2 transistor's base current increases at different rates between the two processes, but eventually levels off to the same final value. However, the PNP transistor's base current increases at approximately the same rate, but eventually levels off at different final values. These indicate that the TiSi2 process may have modified the silicon and oxygen dangling bond structure during its high temperature process in addition to removing the hydrogen from the passivated interface states.

  16. Globally sustainable manganese metal production and use.

    PubMed

    Hagelstein, Karen

    2009-09-01

    The "cradle to grave" concept of managing chemicals and wastes has been a descriptive analogy of proper environmental stewardship since the 1970s. The concept incorporates environmentally sustainable product choices-such as metal alloys utilized steel products which civilization is dependent upon. Manganese consumption is related to the increasing production of raw steel and upgrading ferroalloys. Nonferrous applications of manganese include production of dry-cell batteries, plant fertilizer components, animal feed and colorant for bricks. The manganese ore (high grade 35% manganese) production world wide is about 6 million ton/year and electrolytic manganese metal demand is about 0.7 million ton/year. The total manganese demand is consumed globally by industries including construction (23%), machinery (14%), and transportation (11%). Manganese is recycled within scrap of iron and steel, a small amount is recycled within aluminum used beverage cans. Recycling rate is 37% and efficiency is estimated as 53% [Roskill Metals and Minerals Reports, January 13, 2005. Manganese Report: rapid rise in output caused by Chinese crude steel production. Available from: http://www.roskill.com/reports/manganese.]. Environmentally sustainable management choices include identifying raw material chemistry, utilizing clean production processes, minimizing waste generation, recycling materials, controlling occupational exposures, and collecting representative environmental data. This paper will discuss two electrolytically produced manganese metals, the metal production differences, and environmental impacts cited to date. The two electrolytic manganese processes differ due to the addition of sulfur dioxide or selenium dioxide. Adverse environmental impacts due to use of selenium dioxide methodology include increased water consumption and order of magnitude greater solid waste generation per ton of metal processed. The use of high grade manganese ores in the electrolytic process also

  17. A study of nickel silicide in a conventional furnace for Ni/Cu contact monocrystalline-silicon solar cells

    NASA Astrophysics Data System (ADS)

    Min, Seon Kyu; Lee, Soo Hong

    2013-01-01

    High-conductivity contacts in place of screen-printed contacts are in demand for commercial solar cells. Also, simplifying the process steps is required for commercial solar cells. In addition, very expensive metals are necessary improved efficiency without using scarce. In this research, we replaced screen-printed contacts with Ni/Cu contacts in passivated emitter solar cells. A layer of nickel was used as the seed and the adhesion layer. The main contact was formed by plating with copper. Firing conditions in a conventional furnace were varied so as to form nickel silicide. The best cell showed a solar cell efficiency of 18.76%.

  18. Infrared photodetectors with tailorable response due to resonant plasmon absorption in epitaxial silicide particles embedded in silicon

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; Dejewski, S. M.; George, T.; Jones, E. W.; Krabach, T. N.; Ksendzov, A.

    1993-01-01

    Tailorable infrared photoresponse in the 1-2 micron range are demonstrated in a device incorporating electrically floating metal silicide particles. Photons absorbed by excitation of the metallic-particle surface plasmon are shown to contribute to the photoresponse. Quantum efficiencies of roughly 0.2 percent are measured at 77 K, with dark currents of less than 2 nA/sq cm at a reverse bias of 1 V and detectivities of 4 x 10 exp 9 - 8 x 10 exp 9 cm sq rt Hz/W are obtained.

  19. Physical properties of ternary silicide superconductors Li2XSi3 (X = Rh, Os): An ab initio study

    NASA Astrophysics Data System (ADS)

    Alam, M. A.; Zilani, M. A. K.; Parvin, F.; Hadi, M. A.

    2017-08-01

    An ab initio method, based on the plane wave pseudopotential and the generalized gradient approximation (GGA), is performed to investigate the physical properties such as structural, elastic, electronic and bonding properties of newly synthesized Li2RhSi3 and predicted Li2OsSi3 ternary silicide superconductors for the first time. Both of these compounds are mechanically stable and are brittle in nature. They also have good machinability. Electronic band structures reveal that these compounds have metallic characteristics. They possess complex bonding nature (metallic, covalent and ionic). According to theoretical Vickers hardness, Li2RhSi3 is softer than Li2OsSi3.

  20. Selective rapid thermal chemical vapor deposition of titanium silicide on heavily doped silicon

    NASA Astrophysics Data System (ADS)

    Fang, Hua

    The continued scaling of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) increases the need for advanced contact formation technologies that can be used on ultra-shallow source and drain junctions. Titanium silicide (TiSi2) formed by the Self-Aligned Silicide (SALICIDE) technology is widely used in MOSFET fabrication for this purpose. As device feature sizes shrink down to 0.1 mum, however, the SALICIDE technology becomes increasingly incompatible with ultra-shallow junctions because of silicon substrate consumption. For TiSi2, achieving the low resistivity C54 phase on narrow polycrystalline silicon lines (<0.2 mum) is also quite challenging. This work focused on selective rapid thermal chemical vapor deposition (RTCVD) of TiSi2 on heavily-doped single-crystal substrates and polycrystalline films. As the gaseous precursors, SiH4 and TiCl 4 were used. The main objective of this work was to understand the impact of dopants on TiSi2 nucleation and substrate consumption in order to achieve C54-TiSi2 deposition with negligible consumption on heavily doped p- and n-type Si. In this work, TiSi2 deposition was found to be quite sensitive to both dopant type and amount. While boron doping did not interfere with TiSi2 deposition, arsenic introduced a barrier to nucleation and increased substrate consumption. These effects were linked to surface passivation before and during deposition. Arsenic was found to diffuse into the TiSi2 layer maintaining a high surface concentration during deposition. Phosphorus also showed effects similar to arsenic but these effects were much less severe and could be suppressed by raising the process temperature. To suppress the undesirable effects, different pre-deposition surface treatments were considered. The rationale behind these treatments was to remove the arsenic passivated surface layer without giving arsenic atoms the chance to replenish the surface sites. The surface treatments considered were in-situ Cl2 etching and in

  1. Fuel loading and homogeneity analysis of HFIR design fuel plates loaded with uranium silicide fuel

    SciTech Connect

    Blumenfeld, P.E.

    1995-08-01

    Twelve nuclear reactor fuel plates were analyzed for fuel loading and fuel loading homogeneity by measuring the attenuation of a collimated X-ray beam as it passed through the plates. The plates were identical to those used by the High Flux Isotope Reactor (HFIR) but were loaded with uranium silicide rather than with HFIR`s uranium oxide fuel. Systematic deviations from nominal fuel loading were observed as higher loading near the center of the plates and underloading near the radial edges. These deviations were within those allowed by HFIR specifications. The report begins with a brief background on the thermal-hydraulic uncertainty analysis for the Advanced Neutron Source (ANS) Reactor that motivated a statistical description of fuel loading and homogeneity. The body of the report addresses the homogeneity measurement techniques employed, the numerical correction required to account for a difference in fuel types, and the statistical analysis of the resulting data. This statistical analysis pertains to local variation in fuel loading, as well as to ``hot segment`` analysis of narrow axial regions along the plate and ``hot streak`` analysis, the cumulative effect of hot segment loading variation. The data for all twelve plates were compiled and divided into 20 regions for analysis, with each region represented by a mean and a standard deviation to report percent deviation from nominal fuel loading. The central regions of the plates showed mean values of about +3% deviation, while the edge regions showed mean values of about {minus}7% deviation. The data within these regions roughly approximated random samplings from normal distributions, although the chi-square ({chi}{sup 2}) test for goodness of fit to normal distributions was not satisfied.

  2. Rate Theory Modeling and Simulation of Silicide Fuel at LWR Conditions

    SciTech Connect

    Miao, Yinbin; Ye, Bei; Hofman, Gerard; Yacout, Abdellatif; Gamble, Kyle; Mei, Zhi-Gang

    2016-08-29

    As a promising candidate for the accident tolerant fuel (ATF) used in light water reactors (LWRs), the fuel performance of uranium silicide (U3Si2) at LWR conditions needs to be well understood. In this report, rate theory model was developed based on existing experimental data and density functional theory (DFT) calculations so as to predict the fission gas behavior in U3Si2 at LWR conditions. The fission gas behavior of U3Si2 can be divided into three temperature regimes. During steady-state operation, the majority of the fission gas stays in intragranular bubbles, whereas the dominance of intergranular bubbles and fission gas release only occurs beyond 1000 K. The steady-state rate theory model was also used as reference to establish a gaseous swelling correlation of U3Si2 for the BISON code. Meanwhile, the overpressurized bubble model was also developed so that the fission gas behavior at LOCA can be simulated. LOCA simulation showed that intragranular bubbles are still dominant after a 70 second LOCA, resulting in a controllable gaseous swelling. The fission gas behavior of U3Si2 at LWR conditions is benign according to the rate theory prediction at both steady-state and LOCA conditions, which provides important references to the qualification of U3Si2 as a LWR fuel material with excellent fuel performance and enhanced accident tolerance.

  3. Formation of Nickel Silicide from Direct-liquid-injection Chemical-vapor-deposited Nickel Nitride Films

    SciTech Connect

    Li, Z.; Gordon, R; Li, H; Shenai, D; Lavoie, C

    2010-01-01

    Smooth, continuous, and highly conformal nickel nitride (NiN{sub x}) films were deposited by direct liquid injection (DLI)-chemical vapor deposition (CVD) using a solution of bis(N,N{prime}-di-tert-butylacetamidinato)nickel(II) in tetrahydronaphthalene as the nickel (Ni) source and ammonia (NH{sub 3}) as the coreactant gas. The DLI-CVD NiNx films grown on HF-last (100) silicon and on highly doped polysilicon substrates served as the intermediate for subsequent conversion into nickel silicide (NiSi), which is a key material for source, drain, and gate contacts in microelectronic devices. Rapid thermal annealing in the forming gas of DLI-CVD NiNx films formed continuous NiSi films at temperatures above 400 C. The resistivity of the NiSi films was 15{mu}{Omega} cm, close to the value for bulk crystals. The NiSi films have remarkably smooth and sharp interfaces with underlying Si substrates, thereby producing contacts for transistors with a higher drive current and a lower junction leakage. Resistivity and synchrotron X-ray diffraction in real-time during annealing of NiNx films showed the formation of a NiSi film at about 440 C, which is morphologically stable up to about 650 C. These NiSi films could find applications in future nanoscale complementary metal oxide semiconductor devices or three-dimensional metal-oxide-semiconductor devices such as Fin-type field effect transistors for the 22 nm technology node and beyond.

  4. M(5)-silicon (M= titanium, niobium, molybdenum) based transition-metal silicides for high temperature applications

    NASA Astrophysics Data System (ADS)

    Tang, Zhihong

    2007-12-01

    Transition metal silicides are being considered for future engine turbine components at temperatures up to 1600ºC. Although significant improvement in high temperature strength, room temperature fracture toughness has been realized in the past decade, further improvement in oxidation resistance is needed. Oxidation mechanism of Ti5Si3-based alloys was investigated. Oxidation behavior of Ti5Si3-based alloy strongly depends on the atmosphere. Presence of Nitrogen alters the oxidation behavior of Ti5Si3 by nucleation and growth of nitride subscale. Ti5Si3.2 and Ti5Si3C0.5 alloys exhibited an excellent oxidation resistance in nitrogen bearing atmosphere due to limited dissolution of nitrogen and increased Si/Ti activity ratio. MoSi2 coating developed by pack cementation to protect Mo-based Mo-Si-B composites was found to be effective up to 1500ºC. Shifting coating composition to T1+T2+Mo3Si region showed the possibility to extend the coating lifetime above 1500ºC by more than ten times via formation of slow growing Mo3Si or T2 interlayer without sacrificing the oxidation resistance of the coating. The phase equilibria in the Nb-rich portion of Nb-B system has been evaluated experimentally using metallographic analysis and differential thermal analyzer (DTA). It was shown that Nbss (solid solution) and NbB are the only two primary phases in the 0-40 at.% B composition range, and the eutectic reaction L ↔ Nbss + NbB was determined to occur at 2104+/-5°C by DTA.

  5. Environmental effects and exposures to manganese from use of methylcyclopentadienyl manganese tricarbonyl (MMT) in gasoline.

    PubMed

    Lynam, D R; Roos, J W; Pfeifer, G D; Fort, B F; Pullin, T G

    1999-01-01

    Methylcyclopentadienyl Manganese Tricarbonyl (MMT) has been used since the 1970s in the U.S. as a gasoline octane enhancer Extensive testing of the effects of MMT on regulated gaseous emissions carried out on a wide variety of automobiles showed that use of MMT resulted in significantly lower NOx emissions Tests showed that less than 15% of the manganese from MMT combustion was emitted from the tailpipe, mostly in the PM2.5 fraction as manganese phosphate, with some manganese sulfate and a very small amount of manganese oxide. MMT has been used in Canada in virtually all unleaded gasoline for about 20 years. A probability-based study involving over 900 personal exposure samples in Toronto confirmed exposures to airborne PM2.5 Mn in the general population are quite low (.008 microgram/m3-median). Ambient levels of airborne manganese in Toronto are about the same as those in areas where MMT is not used. Exposures to manganese among the general population in Toronto are well within safe limits determined by the U.S. EPA and other standard setting bodies around the world.

  6. Real-Time Manganese Phase Dynamics during Biological and Abiotic Manganese Oxide Reduction.

    PubMed

    Johnson, Jena E; Savalia, Pratixa; Davis, Ryan; Kocar, Benjamin D; Webb, Samuel M; Nealson, Kenneth H; Fischer, Woodward W

    2016-04-19

    Manganese oxides are often highly reactive and easily reduced, both abiotically, by a variety of inorganic chemical species, and biologically during anaerobic respiration by microbes. To evaluate the reaction mechanisms of these different reduction routes and their potential lasting products, we measured the sequence progression of microbial manganese(IV) oxide reduction mediated by chemical species (sulfide and ferrous iron) and the common metal-reducing microbe Shewanella oneidensis MR-1 under several endmember conditions, using synchrotron X-ray spectroscopic measurements complemented by X-ray diffraction and Raman spectroscopy on precipitates collected throughout the reaction. Crystalline or potentially long-lived phases produced in these experiments included manganese(II)-phosphate, manganese(II)-carbonate, and manganese(III)-oxyhydroxides. Major controls on the formation of these discrete phases were alkalinity production and solution conditions such as inorganic carbon and phosphate availability. The formation of a long-lived Mn(III) oxide appears to depend on aqueous Mn(2+) production and the relative proportion of electron donors and electron acceptors in the system. These real-time measurements identify mineralogical products during Mn(IV) oxide reduction, contribute to understanding the mechanism of various Mn(IV) oxide reduction pathways, and assist in interpreting the processes occurring actively in manganese-rich environments and recorded in the geologic record of manganese-rich strata.

  7. Manganese (II) induces chemical hypoxia by inhibiting HIF-prolyl hydroxylase: Implication in manganese-induced pulmonary inflammation

    SciTech Connect

    Han, Jeongoh; Lee, Jong-Suk; Choi, Daekyu; Lee, Youna; Hong, Sungchae; Choi, Jungyun; Han, Songyi; Ko, Yujin; Kim, Jung-Ae; Mi Kim, Young; Jung, Yunjin

    2009-03-15

    Manganese (II), a transition metal, causes pulmonary inflammation upon environmental or occupational inhalation in excess. We investigated a potential molecular mechanism underlying manganese-induced pulmonary inflammation. Manganese (II) delayed HIF-1{alpha} protein disappearance, which occurred by inhibiting HIF-prolyl hydroxylase (HPH), the key enzyme for HIF-1{alpha} hydroxylation and subsequent von Hippel-Lindau(VHL)-dependent HIF-1{alpha} degradation. HPH inhibition by manganese (II) was neutralized significantly by elevated dose of iron. Consistent with this, the induction of cellular HIF-1{alpha} protein by manganese (II) was abolished by pretreatment with iron. Manganese (II) induced the HIF-1 target gene involved in pulmonary inflammation, vascular endothelial growth factor (VEGF), in lung carcinoma cell lines. The induction of VEGF was dependent on HIF-1. Manganese-induced VEGF promoted tube formation of HUVEC. Taken together, these data suggest that HIF-1 may be a potential mediator of manganese-induced pulmonary inflammation.

  8. Manganese concentrations in Scottish groundwater.

    PubMed

    Homoncik, Sally C; Macdonald, Alan M; Heal, Kate V; Dochartaigh, Brighid E O; Ngwenya, Bryne T

    2010-05-15

    Groundwater is increasingly being used for public and private water supplies in Scotland, but there is growing evidence that manganese (Mn) concentrations in many groundwater supplies exceed the national drinking water limit of 0.05 mg l(-1). This study examines the extent and magnitude of high Mn concentrations in groundwater in Scotland and investigates the factors controlling Mn concentrations. A dataset containing 475 high quality groundwater samples was compiled using new data from Baseline Scotland supplemented with additional high quality data where available. Concentrations ranged up to 1.9 mg l(-1); median Mn concentration was 0.013 mg l(-1) with 25th and 75th percentiles 0.0014 and 0.072 mg l(-1) respectively. The Scottish drinking water limit (0.05 mg l(-1)) was exceeded for 30% of samples and the WHO health guideline (0.4 mg l(-1)) by 9%; concentrations were highest in the Carboniferous sedimentary aquifer in central Scotland, the Devonian sedimentary aquifer of Morayshire, and superficial aquifers. Further analysis using 137 samples from the Devonian aquifers indicated strong redox and pH controls (pH, Eh and dissolved oxygen accounted for 58% of variance in Mn concentrations). In addition, an independent relationship between Fe and Mn was observed, suggesting that Fe behaviour in groundwater may affect Mn solubility. Given the redox status and pH of Scottish groundwaters the most likely explanation is sorption of Mn to Fe oxides, which are released into solution when Fe is reduced. Since the occurrence of elevated Mn concentrations is widespread in groundwaters from all aquifer types, consideration should be given to monitoring Mn more widely in both public and private groundwater supplies in Scotland and by implication elsewhere. Copyright 2010 NERC. Published by Elsevier B.V. All rights reserved.

  9. 40 CFR 721.10011 - Barium calcium manganese strontium oxide.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Barium calcium manganese strontium... Specific Chemical Substances § 721.10011 Barium calcium manganese strontium oxide. (a) Chemical substance... manganese strontium oxide (PMN P-00-1124; CAS No. 359427-90-0) is subject to reporting under this section...

  10. 40 CFR 721.10003 - Manganese heterocyclic tetraamine complex (generic).

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Manganese heterocyclic tetraamine... Specific Chemical Substances § 721.10003 Manganese heterocyclic tetraamine complex (generic). (a) Chemical... as manganese heterocyclic tetraamine complex (PMNs P-98-625/626/627/628/629 and P-00-614/617) are...

  11. 40 CFR 721.10003 - Manganese heterocyclic tetraamine complex (generic).

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Manganese heterocyclic tetraamine... Specific Chemical Substances § 721.10003 Manganese heterocyclic tetraamine complex (generic). (a) Chemical... as manganese heterocyclic tetraamine complex (PMNs P-98-625/626/627/628/629 and P-00-614/617) are...

  12. 40 CFR 721.10003 - Manganese heterocyclic tetraamine complex (generic).

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Manganese heterocyclic tetraamine... Specific Chemical Substances § 721.10003 Manganese heterocyclic tetraamine complex (generic). (a) Chemical... as manganese heterocyclic tetraamine complex (PMNs P-98-625/626/627/628/629 and P-00-614/617) are...

  13. 40 CFR 721.10011 - Barium calcium manganese strontium oxide.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Barium calcium manganese strontium... Specific Chemical Substances § 721.10011 Barium calcium manganese strontium oxide. (a) Chemical substance... manganese strontium oxide (PMN P-00-1124; CAS No. 359427-90-0) is subject to reporting under this section...

  14. 40 CFR 721.10011 - Barium calcium manganese strontium oxide.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Barium calcium manganese strontium... Specific Chemical Substances § 721.10011 Barium calcium manganese strontium oxide. (a) Chemical substance... manganese strontium oxide (PMN P-00-1124; CAS No. 359427-90-0) is subject to reporting under this section...

  15. 40 CFR 721.10003 - Manganese heterocyclic tetraamine complex (generic).

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Manganese heterocyclic tetraamine... Specific Chemical Substances § 721.10003 Manganese heterocyclic tetraamine complex (generic). (a) Chemical... as manganese heterocyclic tetraamine complex (PMNs P-98-625/626/627/628/629 and P-00-614/617) are...

  16. 40 CFR 721.10003 - Manganese heterocyclic tetraamine complex (generic).

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Manganese heterocyclic tetraamine... Specific Chemical Substances § 721.10003 Manganese heterocyclic tetraamine complex (generic). (a) Chemical... as manganese heterocyclic tetraamine complex (PMNs P-98-625/626/627/628/629 and P-00-614/617)...

  17. 40 CFR 721.10011 - Barium calcium manganese strontium oxide.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Barium calcium manganese strontium... Specific Chemical Substances § 721.10011 Barium calcium manganese strontium oxide. (a) Chemical substance... manganese strontium oxide (PMN P-00-1124; CAS No. 359427-90-0) is subject to reporting under this...

  18. Essentiality, Toxicity and Uncertainty in the Risk Assessment of Manganese

    EPA Science Inventory

    Risk assessments of manganese by inhalation or oral routes of exposure typically acknowledge the duality of manganese as an essential element at low doses and a toxic metal at high doses. Previously, however, risk assessors were unable to describe manganese pharmacokinetics quant...

  19. Carbon Nanotube/Graphene Supercapacitors Containing Manganese Oxide Nanoparticles

    DTIC Science & Technology

    2012-12-01

    Carbon Nanotube/Graphene Supercapacitors Containing Manganese Oxide Nanoparticles by Matthew Ervin, Vinay Raju, Mary Hendrickson, and...Laboratory Adelphi, MD 20783-1197 ARL-TR-6289 December 2012 Carbon Nanotube/Graphene Supercapacitors Containing Manganese Oxide...From - To) October 2011 to September 2012 4. TITLE AND SUBTITLE Carbon Nanotube/Graphene Supercapacitors Containing Manganese Oxide Nanoparticles

  20. 40 CFR 721.10201 - Cobalt lithium manganese nickel oxide.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Cobalt lithium manganese nickel oxide... Specific Chemical Substances § 721.10201 Cobalt lithium manganese nickel oxide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as cobalt lithium manganese...

  1. 40 CFR 721.10201 - Cobalt lithium manganese nickel oxide.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Cobalt lithium manganese nickel oxide... Specific Chemical Substances § 721.10201 Cobalt lithium manganese nickel oxide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as cobalt lithium manganese...

  2. 40 CFR 721.10201 - Cobalt lithium manganese nickel oxide.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Cobalt lithium manganese nickel oxide... Specific Chemical Substances § 721.10201 Cobalt lithium manganese nickel oxide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as cobalt lithium manganese...

  3. 40 CFR 721.10011 - Barium calcium manganese strontium oxide.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Barium calcium manganese strontium... Specific Chemical Substances § 721.10011 Barium calcium manganese strontium oxide. (a) Chemical substance... manganese strontium oxide (PMN P-00-1124; CAS No. 359427-90-0) is subject to reporting under this...

  4. Essentiality, Toxicity and Uncertainty in the Risk Assessment of Manganese

    EPA Science Inventory

    Risk assessments of manganese by inhalation or oral routes of exposure typically acknowledge the duality of manganese as an essential element at low doses and a toxic metal at high doses. Previously, however, risk assessors were unable to describe manganese pharmacokinetics quant...

  5. Silver manganese oxide electrodes for lithium batteries

    DOEpatents

    Thackeray, Michael M.; Vaughey, John T.; Dees, Dennis W.

    2006-05-09

    This invention relates to electrodes for non-aqueous lithium cells and batteries with silver manganese oxide positive electrodes, denoted AgxMnOy, in which x and y are such that the manganese ions in the charged or partially charged electrodes cells have an average oxidation state greater than 3.5. The silver manganese oxide electrodes optionally contain silver powder and/or silver foil to assist in current collection at the electrodes and to improve the power capability of the cells or batteries. The invention relates also to a method for preparing AgxMnOy electrodes by decomposition of a permanganate salt, such as AgMnO4, or by the decomposition of KMnO4 or LiMnO4 in the presence of a silver salt.

  6. Bacterial manganese reduction and growth with manganese oxide as the sole electron acceptor

    NASA Technical Reports Server (NTRS)

    Myers, Charles R.; Nealson, Kenneth H.

    1988-01-01

    Microbes that couple growth to the reduction of manganese could play an important role in the biogeochemistry of certain anaerobic environments. Such a bacterium, Alteromonas putrefaciens MR-1, couples its growth to the reduction of manganese oxides only under anaerobic conditions. The characteristics of this reduction are consistent with a biological, and not an indirect chemical, reduction of manganese, which suggest that this bacterium uses manganic oxide as a terminal electron acceptor. It can also utilize a large number of other compounds as terminal electron acceptors; this versatility could provide a distinct advantage in environments where electron-acceptor concentrations may vary.

  7. Studies on manganese nodule leached residues 2. Adsorption of aqueous phosphate on manganese nodule leached residues.

    PubMed

    Parida, K M; Mallick, S; Dash, S S

    2005-10-01

    Adsorption of phosphate onto manganese nodule leached residues was investigated as a possible alternative to conventional methods of phosphate removal from industrial effluents. Adsorption behaviors were studied as a function of time, temperature, pH, and concentration level of adsorbate and adsorbent in acetic acid-sodium acetate buffer medium. The adsorption of phosphate follows the Langmuir adsorption isotherms. The magnitude of adsorption of phosphate in manganese nodule leached residues was compared with that in naturally occurring Mn nodule. Manganese nodule leached residues show better affinity toward phosphate adsorption.

  8. Metal Uptake by Manganese Superoxide Dismutase

    PubMed Central

    Whittaker, James W.

    2009-01-01

    Manganese superoxide dismutase is an important antioxidant defense metalloenzyme that protects cells from damage by the toxic oxygen metabolite, superoxide free radical, formed as an unavoidable by-product of aerobic metabolism. Many years of research have gone into understanding how the metal cofactor interacts with small molecules in its catalytic role. In contrast, very little is presently known about how the protein acquires its metal cofactor, an important step in the maturation of the protein and one that is absolutely required for its biological function. Recent work is beginning to provide insight into the mechanisms of metal delivery to manganese superoxide dismutase in vivo and in vitro. PMID:19699328

  9. Micromechanisms of creep-fatigue crack growth in a silicide-matrix composite with SiC particles

    SciTech Connect

    Ramamurty, U.; Kim, A.S.; Suresh, S. ); Petrovic, J.J. )

    1993-08-01

    An experimental study has been conducted to examine the cyclic fatigue crack growth characteristics in 1,200 C air of a MoSi[sub 2]-50 mol% WSi[sub 2] alloy in the unreinforced condition and with 30 vol% SiC particles. For comparison purposes, crack growth experiments under sustained loads were also carried out in the silicide-matrix composite. Particular attention is devoted to developing an understanding of the micromechanism of subcritical crack growth by recourse to optical and electron microscopy, including transmission electron microscopy of crack-tip damage. The results indicate that enhanced viscous flow of glass films along interfaces and grain boundaries imparts pronounced levels of subcritical crack growth in the composite material; the composite exhibits a higher fatigue fracture threshold and a more extended range of stable fracture than the unreinforced alloy. The effects of glass phase in influencing fatigue crack growth in the silicide-based material are compared to the influence of in situ-formed and preexisting glass films on high-temperature cyclic fatigue crack growth in ceramics and ceramic composites. The paper concludes with a comparison of present results with the high-temperature damage tolerance of a variety of intermetallic alloys and ceramic materials.

  10. Electronic structure of the Nowotny chimney-ladder silicide Ru{sub 2}Si{sub 3}

    SciTech Connect

    Wolf, W.; Bihlmayer, G.; Bluegel, S.

    1997-03-01

    We report {ital ab initio} calculations for the electronic structure of the Nowotny chimney-ladder silicide Ru{sub 2}Si{sub 3} in the orthorhombic low-temperature phase. We find Ru{sub 2}Si{sub 3} to be a semiconductor with a direct band gap of about 0.45 eV. Since this gap is a p-d gap, the oscillator strength for a direct transition is expected to be of sizable magnitude. Also, the calculated effective masses of hole and electron states suggest that Ru{sub 2}Si{sub 3} is a very promising material for various applications in semiconductor technology. The electronic structure is controlled by the hybridization of Si p states with Ru d states and shows similarities to the group-IV transition-metal disilicides (CrSi{sub 2}, MoSi{sub 2}, WSi{sub 2}) and to transition-metal-rich silicides. The calculations are based on the density-functional theory in local-density approximation and are performed by means of the full-potential linearized-augmented-plane-wave method. {copyright} {ital 1997} {ital The American Physical Society}

  11. Isothermal and cyclic oxidation resistance of boron-modified and germanium-doped silicide coatings for titanium alloys

    SciTech Connect

    Cockeram, B.; Rapp, R.A.

    1996-06-01

    Since titanium alloys with an adequate balance of mechanical properties and high-temperature oxidation resistance have not been developed, protective coatings are required. In the authors previous paper, B-modified and Ge-doped silicide diffusion coatings grown on Cp Ti, Ti-24Al-11Nb, Ti-22Al-27Nb, and Ti-20Al-22Nb by the halide-activated, pack-cementation method were described. In this study, isothermal and cyclic oxidation were used to evaluate the oxidation performance of these coatings in comparison to uncoated substrates. The rate-controlling mechanism for isothermal oxidation at high temperature was solid-state diffusion through a SiO{sub 2} scale, while the mechanism for low-temperature oxidation involved grain-boundary diffusion through TiO{sub 2}. Both isothermal and cyclic oxidation rates for the B-modified and Ge-doped silicide coatings were much slower than for pure TiSi{sub 2}. Oxygen contamination was not detected by microhardness measurements in the coated substrates after 200 oxidation cycles at 500-1000{degrees}C for the Ti-Al-Nb alloys, or at 500-875{degrees}C for Cp Ti. The excellent oxidation resistance for the optimum coating compositions is discussed.

  12. Silicide induced surface defects in FePt nanoparticle fcc-to-fct thermally activated phase transition

    NASA Astrophysics Data System (ADS)

    Chen, Shu; Lee, Stephen L.; André, Pascal

    2016-11-01

    Magnetic nanoparticles (MnPs) are relevant to a wide range of applications including high density information storage and magnetic resonance imaging to name but a few. Among the materials available to prepare MnPs, FePt is attracting growing attention. However, to harvest the strongest magnetic properties of FePt MnPs, a thermal annealing is often required to convert face-centered cubic as synthesized nPs into its tetragonal phase. Rarely addressed are the potential side effects of such treatments on the magnetic properties. In this study, we focus on the impact of silica shells often used in strategies aiming at overcoming MnP coalescence during the thermal annealing. While we show that this shell does prevent sintering, and that fcc-to-fct conversion does occur, we also reveal the formation of silicide, which can prevent the stronger magnetic properties of fct-FePt MnPs from being fully realised. This report therefore sheds lights on poorly investigated and understood interfacial phenomena occurring during the thermal annealing of MnPs and, by doing so, also highlights the benefits of developing new strategies to avoid silicide formation.

  13. Manganese control during ozonation of water containing organic compounds

    SciTech Connect

    Wilczak, A.; Aieta, E.M. ); Knocke, W.R. ); Hubel, R.E. )

    1993-10-01

    Bench-scale tests were conducted to investigate the removal of dissolved manganese from Delaware River water. Prior pilot-plant results had indicated that manganese was not effectively removed by ozonation, sludge blanket clarification, and filtration, because of the breakthrough or resolubilization of colloidal manganese dioxide [MnO[sub 2](s)] species. Increasing the alkalinity was not an effective means of controlling manganese. But application of potassium permanganate after ozonation and at the beginning of coagulation considerably improved the removal of soluble manganese.

  14. Manganese regulation of manganese peroxidase expression and lignin degradation by the white rot fungus Dichomitus squalens

    SciTech Connect

    Perie, F.; Gold, M.H. )

    1991-08-01

    Extracellular manganese peroxidase and laccase activities were detected in cultures of Dichomitus squalens (Polyporus anceps) under conditions favoring lignin degradation. In contrast, neither extracellular lignin peroxidase nor aryl alcohol oxidase activity was detected in cultures grown under a wide variety of conditions. The mineralization of {sup 14}C-ring-, -side chain-, and -methoxy-labeled synthetic guaiacyl lignins by D. squalens and the expression of extracellular manganese peroxidase were dependent on the presence of Mn(II), suggesting that manganese peroxidase is an important component of this organism's lignin degradation system. The expression of laccase activity was independent of manganese. In contrast to previous findings with Phanero-chaete chrysosporium, lignin degradation by D. squalens proceeded in the cultures containing excess carbon and nitrogen.

  15. {sup 45}Sc Solid State NMR studies of the silicides ScTSi (T=Co, Ni, Cu, Ru, Rh, Pd, Ir, Pt)

    SciTech Connect

    Harmening, Thomas; Eckert, Hellmut; Fehse, Constanze M.; Sebastian, C. Peter; Poettgen, Rainer

    2011-12-15

    The silicides ScTSi (T=Fe, Co, Ni, Cu, Ru, Rh, Pd, Ir, Pt) were synthesized by arc-melting and characterized by X-ray powder diffraction. The structures of ScCoSi, ScRuSi, ScPdSi, and ScIrSi were refined from single crystal diffractometer data. These silicides crystallize with the TiNiSi type, space group Pnma. No systematic influences of the {sup 45}Sc isotropic magnetic shift and nuclear electric quadrupolar coupling parameters on various structural distortion parameters calculated from the crystal structure data can be detected. {sup 45}Sc MAS-NMR data suggest systematic trends in the local electronic structure probed by the scandium atoms: both the electric field gradients and the isotropic magnetic shifts relative to a 0.2 M aqueous Sc(NO{sub 3}){sub 3} solution decrease with increasing valence electron concentration and within each T group the isotropic magnetic shift decreases monotonically with increasing atomic number. The {sup 45}Sc nuclear electric quadrupolar coupling constants are generally well reproduced by quantum mechanical electric field gradient calculations using the WIEN2k code. Highlights: Black-Right-Pointing-Pointer Arc-melting synthesis of silicides ScTSi. Black-Right-Pointing-Pointer Single crystal X-ray data of ScCoSi, ScRuSi, ScPdSi, and ScIrSi. Black-Right-Pointing-Pointer {sup 45}Sc solid state NMR of silicides ScTSi.

  16. The role of composition and microstructure in Ni-W silicide formation and low temperature epitaxial NiSi2 growth by premixing Si

    NASA Astrophysics Data System (ADS)

    Schrauwen, A.; Van Stiphout, K.; Demeulemeester, J.; De Schutter, B.; Devulder, W.; Comrie, C. M.; Detavernier, C.; Temst, K.; Vantomme, A.

    2017-02-01

    We report on an extensive and detailed study of the silicide reaction of Ni-W alloys on Si(1 0 0). The solid phase reaction when studied over the full composition range reveals the substantial impact of composition and microstructure on the silicide reaction properties, such as the phase formation sequence and formation temperatures. It was found that the microstructure of the as-deposited film depends crucially on the alloy composition, being polycrystalline below 45 at.% W and amorphous above 45 at.% W. The microstructure affects the elemental mobility substantially, resulting in a drastic increase in the silicide reaction temperature in the case of an amorphous thin film. To further investigate the effect of elemental mobility, Si was premixed in the as-deposited alloy, thereby excluding the need for long-range diffusion. As a result, the silicide reaction temperatures were lowered. However, what was more striking was the observation of a bilayer structure for epitaxial NiSi2 in contact with the Si substrate and a W-rich layer residing at the outermost layer at a temperature of only 300 °C. The results stress the importance of the composition and crystalline nature of the as-deposited film, with these being decisive for the reaction sequence.

  17. Two-dimensional self-organization of an ordered Au silicide nanowire network on a Si(110)-16 x 2 surface.

    PubMed

    Hong, Ie-Hong; Yen, Shang-Chieh; Lin, Fu-Shiang

    2009-08-17

    A well-ordered two-dimensional (2D) network consisting of two crossed Au silicide nanowire (NW) arrays is self-organized on a Si(110)-16 x 2 surface by the direct-current heating of approximately 1.5 monolayers of Au on the surface at 1100 K. Such a highly regular crossbar nanomesh exhibits both a perfect long-range spatial order and a high integration density over a mesoscopic area, and these two self-ordering crossed arrays of parallel-aligned NWs have distinctly different sizes and conductivities. NWs are fabricated with widths and pitches as small as approximately 2 and approximately 5 nm, respectively. The difference in the conductivities of two crossed-NW arrays opens up the possibility for their utilization in nanodevices of crossbar architecture. Scanning tunneling microscopy/spectroscopy studies show that the 2D self-organization of this perfect Au silicide nanomesh can be achieved through two different directional electromigrations of Au silicide NWs along different orientations of two nonorthogonal 16 x 2 domains, which are driven by the electrical field of direct-current heating. Prospects for this Au silicide nanomesh are also discussed.

  18. Competition for Manganese at the Host-Pathogen Interface.

    PubMed

    Kelliher, J L; Kehl-Fie, T E

    2016-01-01

    Transition metals such as manganese are essential nutrients for both pathogen and host. Vertebrates exploit this necessity to combat invading microbes by restricting access to these critical nutrients, a defense known as nutritional immunity. During infection, the host uses several mechanisms to impose manganese limitation. These include removal of manganese from the phagolysosome, sequestration of extracellular manganese, and utilization of other metals to prevent bacterial acquisition of manganese. In order to cause disease, pathogens employ a variety of mechanisms that enable them to adapt to and counter nutritional immunity. These adaptations include, but are likely not limited to, manganese-sensing regulators and high-affinity manganese transporters. Even though successful pathogens can overcome host-imposed manganese starvation, this defense inhibits manganese-dependent processes, reducing the ability of these microbes to cause disease. While the full impact of host-imposed manganese starvation on bacteria is unknown, critical bacterial virulence factors such as superoxide dismutases are inhibited. This chapter will review the factors involved in the competition for manganese at the host-pathogen interface and discuss the impact that limiting the availability of this metal has on invading bacteria.

  19. Thermodynamics of carbon and oxygen solutions in manganese melts

    NASA Astrophysics Data System (ADS)

    Dashevskii, V. Ya.

    2007-12-01

    The thermodynamics of carbon and oxygen solutions in manganese melts is studied. An equation for the temperature dependence of the activity coefficient of carbon in liquid manganese is obtained (γ{C(Mn)/0}= -1.5966 + (1.0735 × 10-3) T). The temperature dependence of the Gibbs energy of the reaction of carbon dissolved in liquid manganese with the oxygen of manganese oxide is shown to be described by the equation Δ G {T/0}= 375264 - 184.66 T(J/mol). This reaction can noticeably be developed depending on the carbon content at temperatures of 1700 1800°C. The deoxidation ability of carbon in manganese melts is shown to be much lower than that in iron and nickel melts due to the higher affinity of manganese to both oxygen and carbon. Although the deoxidation ability of carbon in manganese melts increases with temperature, the process develops at rather high carbon contents in all cases.

  20. Manganese ore tailing: optimization of acid leaching conditions and recovery of soluble manganese.

    PubMed

    Santos, Olívia de Souza Heleno; Carvalho, Cornélio de Freitas; Silva, Gilmare Antônia da; Santos, Cláudio Gouvêa Dos

    2015-01-01

    Manganese recovery from industrial ore processing waste by means of leaching with sulfuric acid was the objective of this study. Experimental conditions were optimized by multivariate experimental design approaches. In order to study the factors affecting leaching, a screening step was used involving a full factorial design with central point for three variables in two levels (2(3)). The three variables studied were leaching time, concentration of sulfuric acid and sample amount. The three factors screened were shown to be relevant and therefore a Doehlert design was applied to determine the best working conditions for leaching and to build the response surface. By applying the best leaching conditions, the concentrations of 12.80 and 13.64 %w/w of manganese for the global sample and for the fraction -44 + 37 μm, respectively, were found. Microbeads of chitosan were tested for removal of leachate acidity and recovering of soluble manganese. Manganese recovery from the leachate was 95.4%. Upon drying the leachate, a solid containing mostly manganese sulfate was obtained, showing that the proposed optimized method is efficient for manganese recovery from ore tailings.

  1. 21 CFR 73.2775 - Manganese violet.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2775 Manganese violet. (a) Identity. The color additive... substances, not more than 6 percent. pH of filtrate of 10 grams color additive (shaken occasionally for 2...

  2. 21 CFR 73.2775 - Manganese violet.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2775 Manganese violet. (a) Identity. The color additive... substances, not more than 6 percent. pH of filtrate of 10 grams color additive (shaken occasionally for 2...

  3. 21 CFR 73.2775 - Manganese violet.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... manganese violet is a violet pigment obtained by reacting phosphoric acid, ammonium dihydrogen... less than 81 percent. Volatile matter at 135 °C for 3 hours, not more than 1 percent. Water soluble... hours with 100 milliliters of freshly boiled distilled water), not more than 4.7 and not less than 2.5...

  4. Geology of the manganese deposits of Cuba

    USGS Publications Warehouse

    Simons, Frank S.; Straczek, John A.

    1958-01-01

    Deposits of manganese ore have been found in five of the six provinces of Cuba and have been reported from the sixth.  Only Oriente and Pinar del Rio provinces have more than a few known deposits and only the deposits of Oriente have yielded any appreciable amount of ore.

  5. ADVERSE HEALTH EFFECTS FROM ENVIRONMENTAL MANGANESE EXPOSURE.

    EPA Science Inventory

    The ubiquitous element, manganese (Mn), is an essential nutrient, but toxic at excessive exposure levels. Therefore, the US EPA set guideline levels for Mn exposure through inhalation (reference concentration-RfC=0.05 ?g/m3) and ingestion (reference dose-RfD=0.14 mg/kg/day (10 mg...

  6. 21 CFR 73.2775 - Manganese violet.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2775 Manganese violet. (a) Identity. The color additive... extent that such other impurities may be avoided by good manufacturing practice: Ash (at 600 °C), not... substances, not more than 6 percent. pH of filtrate of 10 grams color additive (shaken occasionally for 2...

  7. Manganese homeostasis in the nervous system.

    PubMed

    Chen, Pan; Chakraborty, Sudipta; Mukhopadhyay, Somshuvra; Lee, Eunsook; Paoliello, Monica M B; Bowman, Aaron B; Aschner, Michael

    2015-08-01

    Manganese (Mn) is an essential heavy metal that is naturally found in the environment. Daily intake through dietary sources provides the necessary amount required for several key physiological processes, including antioxidant defense, energy metabolism, immune function and others. However, overexposure from environmental sources can result in a condition known as manganism that features symptomatology similar to Parkinson's disease (PD). This disorder presents with debilitating motor and cognitive deficits that arise from a neurodegenerative process. In order to maintain a balance between its essentiality and neurotoxicity, several mechanisms exist to properly buffer cellular Mn levels. These include transporters involved in Mn uptake, and newly discovered Mn efflux mechanisms. This review will focus on current studies related to mechanisms underlying Mn import and export, primarily the Mn transporters, and their function and roles in Mn-induced neurotoxicity. Though and essential metal, overexposure to manganese may result in neurodegenerative disease analogous to Parkinson's disease. Manganese homeostasis is tightly regulated by transporters, including transmembrane importers (divalent metal transporter 1, transferrin and its receptor, zinc transporters ZIP8 and Zip14, dopamine transporter, calcium channels, choline transporters and citrate transporters) and exporters (ferroportin and SLC30A10), as well as the intracellular trafficking proteins (SPCA1 and ATP12A2). A manganese-specific sensor, GPP130, has been identified, which affords means for monitoring intracellular levels of this metal.

  8. ADVERSE HEALTH EFFECTS FROM ENVIRONMENTAL MANGANESE EXPOSURE.

    EPA Science Inventory

    The ubiquitous element, manganese (Mn), is an essential nutrient, but toxic at excessive exposure levels. Therefore, the US EPA set guideline levels for Mn exposure through inhalation (reference concentration-RfC=0.05 ?g/m3) and ingestion (reference dose-RfD=0.14 mg/kg/day (10 mg...

  9. Chemically activated manganese dioxide for dry batteries

    NASA Astrophysics Data System (ADS)

    Askar, M.; Abbas, H.

    1994-10-01

    The present investigation has enabled us to convert inactive beta-manganese dioxide to high electrochemically active types by chemical processes. Natural and chemically prepared beta-manganese dioxides were roasted at 1050 C to form Mn3O4. This compound was subjected to activation treatment using hydrochloric and sulfuric acid under various reaction conditions. The manganese dioxide so obtained was examined by x-ray diffraction, thermogravimetric, differential thermal, and chemical analyses. The structure of the dioxide obtained was found to be greatly dependent on the origin of MnO2 and type of acid used. Treatment with hydrochloric acid yielded the so-called gamma-variety while sulfuric acid tended to produce gamma- or alpha-MnO2. In addition, waste manganese sulfate obtained as by-product from sulfuric acid digestion treatment was recycled and electrolytically oxidized to gamma-MnO2. The discharge performance of the above-mentioned MnO2 samples as battery cathodic active material was evaluated and compared with the ordinary battery grade.

  10. Lithium Manganese Silicate Positive Electrode Material

    NASA Astrophysics Data System (ADS)

    Yang, Qiong

    As the fast development of the electronic portable devices and drastic fading of fossil energy sources. The need for portable secondary energy sources is increasingly urgent. As a result, lithium ion batteries are being investigated intensely to meet the performance requirements. Among various electrode materials, the most expensive and capacity limiting component is the positive materials. Based on this, researches have been mostly focused on the development of novel cathode materials with high capacity and energy density and the lithium transition metal orthosilicates have been identified as possible high performance cathodes. Here in, we report the synthesis of a kind of lithium transition metal orthosilicates electrode lithium manganese silicate. Lithium manganese silicate has the advantage of high theoretical capacity, low cost raw material and safety. In this thesis, lithium manganese silicate are prepared using different silicon sources. The structure of silicon sources preferred are examined. Nonionic block copolymers surfactant, P123, is tried as carbon source and mophology directing agent. Lithium manganese silicate's performances are improved by adding P123.

  11. 21 CFR 184.1446 - Manganese chloride.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 3 2014-04-01 2014-04-01 false Manganese chloride. 184.1446 Section 184.1446 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) DIRECT FOOD SUBSTANCES AFFIRMED AS GENERALLY RECOGNIZED AS SAFE Listing of Specific Substances Affirmed as...

  12. 21 CFR 582.5461 - Manganese sulfate.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 6 2010-04-01 2010-04-01 false Manganese sulfate. 582.5461 Section 582.5461 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS, FEEDS, AND RELATED PRODUCTS SUBSTANCES GENERALLY RECOGNIZED AS SAFE Nutrients and/or Dietary...

  13. 21 CFR 184.1449 - Manganese citrate.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 3 2011-04-01 2011-04-01 false Manganese citrate. 184.1449 Section 184.1449 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION (CONTINUED) DIRECT FOOD SUBSTANCES AFFIRMED AS GENERALLY RECOGNIZED AS SAFE Listing of...

  14. 21 CFR 184.1461 - Manganese sulfate.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 3 2011-04-01 2011-04-01 false Manganese sulfate. 184.1461 Section 184.1461 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION (CONTINUED) DIRECT FOOD SUBSTANCES AFFIRMED AS GENERALLY RECOGNIZED AS SAFE Listing of...

  15. 21 CFR 184.1446 - Manganese chloride.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 3 2011-04-01 2011-04-01 false Manganese chloride. 184.1446 Section 184.1446 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION (CONTINUED) DIRECT FOOD SUBSTANCES AFFIRMED AS GENERALLY RECOGNIZED AS SAFE Listing of...

  16. 21 CFR 184.1452 - Manganese gluconate.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 3 2011-04-01 2011-04-01 false Manganese gluconate. 184.1452 Section 184.1452 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION (CONTINUED) DIRECT FOOD SUBSTANCES AFFIRMED AS GENERALLY RECOGNIZED AS SAFE...

  17. Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

    NASA Technical Reports Server (NTRS)

    Mahan, John E.

    1990-01-01

    Work done during the final report period is presented. The main technical objective was to achieve epitaxial growth on silicon of two semiconducting silicides, ReSi2 and CrSi2. ReSi2 thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi2(100)/Si(001) with ReSi2(010) parallel to Si(110). The lattice matching consists of a common unit mesh of 120 A(sup 2) area, and a mismatch of 1.8 percent. Transmission electron microscopy revealed the existence of rotation twins corresponding to two distinct but equivalent azimuthal orientations of the common unit mesh. MeV He(+) backscattering spectrometry revealed a minimum channeling yield of 2 percent for an approximately 1,500 A thick film grown at 650 C. Although the lateral dimension of the twins is on the order of 100 A, there is a very high degree of alignment between the ReSi2(100) and the Si(001) planes. Highly oriented films of CrSi2 were grown on (111) silicon substrates, with the matching crystallographic faces being CrSi2(001)/Si(111). The reflection high-energy electron diffraction (RHEED) patterns of the films consist of sharp streaks, symmetrically arranged. The predominant azimuthal orientation of the films was determined to be CrSi2(210) parallel to Si(110). This highly desirable heteroepitaxial relationship has been obtained previously by others; it may be described with a common unit mesh of 51 A(sup 2) and mismatch of 0.3 percent. RHEED also revealed the presence of limited film regions of a competing azimuthal orientation, CrSi2(110) parallel to Si(110). A channeling effect for MeV He(+) ions was not found for this material. Potential commercial applications of this research may be found in silicon-integrated infrared detector arrays. Optical characterizations showed that semiconducting ReSi2 is a strong absorber of infrared radiation, with the adsorption constant increasing above 2 x

  18. High-temperature thermochemistry of transition metal borides, silicides and related compounds. Final report

    SciTech Connect

    Klemppa, Ole J.

    2000-10-01

    Earlier this year in collaboration with Dr. Susan V. Meschel we prepared a major review paper which gives a comprehensive summary of what our laboratory has accomplished with support from DOE. This paper is No.43 in the List of Publications provided. It was presented to TMS at its National Meeting in Nashville, TN last March. A copy of the manuscript of this paper was recently mailed to DOE. It has been submitted for publication in Journal of Alloys and Compounds. This review paper summarizes our observed trends in the enthalpies of formation of TR-X and RE-X compounds (where X is a IIIB or IVB element) in their dependence of the atomic number of the transition metal (TR) and the lanthanide metal (RE). In this paper our measured enthalpies of formation for each alloy family are compared for the 3d, 4d and 5d transition metal elements. We also compare our experimental results with predicted values based on Miedema's semi-empirical model. Data are presented for the carbides, silicides, germanides and stannides in Group IVB, and for the borides and aluminides in Group IIIB. During the past year (1999-2000) we have extended our work to compounds of the 3d, 4d and 5d elements with gallium (see papers No.40, No.41, and No.45 in the List of Publications). Fig. 1 (taken from No.45) presents a systematic picture of our experimental values for the most exothermic gallide compounds formed with the transition elements. This figure is characteristic of the other systematic pictures which we have found for the two other IIIB elements which we have studied and for the four IVB elements. These figures are all presented in Ref. No.43. This paper also illustrates how the enthalpy of formation of compounds of the IIIB and IVB elements with the lanthanide elements (with the exception of Pm, Eu and Yb) depend on the atomic number of RE. Finally our results for the RE-X compounds are compared with the predictions of Gschneidner (K.A. Gschneidner, Jr., J. Less Common Metals 17, 1

  19. Soil manganese enrichment from industrial inputs: a gastropod perspective.

    PubMed

    Bordean, Despina-Maria; Nica, Dragos V; Harmanescu, Monica; Banatean-Dunea, Ionut; Gergen, Iosif I

    2014-01-01

    Manganese is one of the most abundant metal in natural environments and serves as an essential microelement for all living systems. However, the enrichment of soil with manganese resulting from industrial inputs may threaten terrestrial ecosystems. Several studies have demonstrated harmful effects of manganese exposure by cutaneous contact and/or by soil ingestion to a wide range of soil invertebrates. The link between soil manganese and land snails has never been made although these invertebrates routinely come in contact with the upper soil horizons through cutaneous contact, egg-laying, and feeding activities in soil. Therefore, we have investigated the direct transfer of manganese from soils to snails and assessed its toxicity at background concentrations in the soil. Juvenile Cantareus aspersus snails were caged under semi-field conditions and exposed first, for a period of 30 days, to a series of soil manganese concentrations, and then, for a second period of 30 days, to soils with higher manganese concentrations. Manganese levels were measured in the snail hepatopancreas, foot, and shell. The snail survival and shell growth were used to assess the lethal and sublethal effects of manganese exposure. The transfer of manganese from soil to snails occurred independently of food ingestion, but had no consistent effect on either the snail survival or shell growth. The hepatopancreas was the best biomarker of manganese exposure, whereas the shell did not serve as a long-term sink for this metal. The kinetics of manganese retention in the hepatopancreas of snails previously exposed to manganese-spiked soils was significantly influenced by a new exposure event. The results of this study reveal the importance of land snails for manganese cycling in terrestrial biotopes and suggest that the direct transfer from soils to snails should be considered when precisely assessing the impact of anthropogenic Mn releases on soil ecosystems.

  20. Soil Manganese Enrichment from Industrial Inputs: A Gastropod Perspective

    PubMed Central

    Bordean, Despina-Maria; Nica, Dragos V.; Harmanescu, Monica; Banatean-Dunea, Ionut; Gergen, Iosif I.

    2014-01-01

    Manganese is one of the most abundant metal in natural environments and serves as an essential microelement for all living systems. However, the enrichment of soil with manganese resulting from industrial inputs may threaten terrestrial ecosystems. Several studies have demonstrated harmful effects of manganese exposure by cutaneous contact and/or by soil ingestion to a wide range of soil invertebrates. The link between soil manganese and land snails has never been made although these invertebrates routinely come in contact with the upper soil horizons through cutaneous contact, egg-laying, and feeding activities in soil. Therefore, we have investigated the direct transfer of manganese from soils to snails and assessed its toxicity at background concentrations in the soil. Juvenile Cantareus aspersus snails were caged under semi-field conditions and exposed first, for a period of 30 days, to a series of soil manganese concentrations, and then, for a second period of 30 days, to soils with higher manganese concentrations. Manganese levels were measured in the snail hepatopancreas, foot, and shell. The snail survival and shell growth were used to assess the lethal and sublethal effects of manganese exposure. The transfer of manganese from soil to snails occurred independently of food ingestion, but had no consistent effect on either the snail survival or shell growth. The hepatopancreas was the best biomarker of manganese exposure, whereas the shell did not serve as a long-term sink for this metal. The kinetics of manganese retention in the hepatopancreas of snails previously exposed to manganese-spiked soils was significantly influenced by a new exposure event. The results of this study reveal the importance of land snails for manganese cycling in terrestrial biotopes and suggest that the direct transfer from soils to snails should be considered when precisely assessing the impact of anthropogenic Mn releases on soil ecosystems. PMID:24454856