DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Pei-Yang; Zhang, Guojing; Gullickson, Eric M.

Extreme ultraviolet lithography (EUVL) mask multi-layer (ML) blank surface roughness specification historically comes from blank defect inspection tool requirement. Later, new concerns on ML surface roughness induced wafer pattern line width roughness (LWR) arise. In this paper, we have studied wafer level pattern LWR as a function of EUVL mask surface roughness via High-NA Actinic Reticle Review Tool. We found that the blank surface roughness induced LWR at current blank roughness level is in the order of 0.5nm 3σ for NA=0.42 at the best focus. At defocus of ±40nm, the corresponding LWR will be 0.2nm higher. Further reducing EUVL maskmore » blank surface roughness will increase the blank cost with limited benefit in improving the pattern LWR, provided that the intrinsic resist LWR is in the order of 1nm and above.« less

Understanding and reduction of defects on finished EUV masks

NASA Astrophysics Data System (ADS)

Liang, Ted; Sanchez, Peter; Zhang, Guojing; Shu, Emily; Nagpal, Rajesh; Stivers, Alan

2005-05-01

To reduce the risk of EUV lithography adaptation for the 32nm technology node in 2009, Intel has operated a EUV mask Pilot Line since early 2004. The Pilot Line integrates all the necessary process modules including common tool sets shared with current photomask production as well as EUV specific tools. This integrated endeavor ensures a comprehensive understanding of any issues, and development of solutions for the eventual fabrication of defect-free EUV masks. Two enabling modules for "defect-free" masks are pattern inspection and repair, which have been integrated into the Pilot Line. This is the first time we are able to look at real defects originated from multilayer blanks and patterning process on finished masks over entire mask area. In this paper, we describe our efforts in the qualification of DUV pattern inspection and electron beam mask repair tools for Pilot Line operation, including inspection tool sensitivity, defect classification and characterization, and defect repair. We will discuss the origins of each of the five classes of defects as seen by DUV pattern inspection tool on finished masks, and present solutions of eliminating and mitigating them.

Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer

DOEpatents

Cardinale, Gregory F.

2002-01-01

A method for fabricating masks for extreme ultraviolet lithography (EUVL) using Ultra-Low Expansion (ULE) substrates and crystalline silicon. ULE substrates are required for the necessary thermal management in EUVL mask blanks, and defect detection and classification have been obtained using crystalline silicon substrate materials. Thus, this method provides the advantages for both the ULE substrate and the crystalline silicon in an Extreme Ultra-Violet (EUV) mask blank. The method is carried out by bonding a crystalline silicon wafer or member to a ULE wafer or substrate and thinning the silicon to produce a 5-10 .mu.m thick crystalline silicon layer on the surface of the ULE substrate. The thinning of the crystalline silicon may be carried out, for example, by chemical mechanical polishing and if necessary or desired, oxidizing the silicon followed by etching to the desired thickness of the silicon.

Optical inspection of NGL masks

NASA Astrophysics Data System (ADS)

Pettibone, Donald W.; Stokowski, Stanley E.

2004-12-01

For the last five years KLA-Tencor and our joint venture partners have pursued a research program studying the ability of optical inspection tools to meet the inspection needs of possible NGL lithographies. The NGL technologies that we have studied include SCALPEL, PREVAIL, EUV lithography, and Step and Flash Imprint Lithography. We will discuss the sensitivity of the inspection tools and mask design factors that affect tool sensitivity. Most of the work has been directed towards EUV mask inspection and how to optimize the mask to facilitate inspection. Our partners have succeeded in making high contrast EUV masks ranging in contrast from 70% to 98%. Die to die and die to database inspection of EUV masks have been achieved with a sensitivity that is comparable to what can be achieved with conventional photomasks, approximately 80nm defect sensitivity. We have inspected SCALPEL masks successfully. We have found a limitation of optical inspection when applied to PREVAIL stencil masks. We have run inspections on SFIL masks in die to die, reflected light, in an effort to provide feedback to improve the masks. We have used a UV inspection system to inspect both unpatterned EUV substrates (no coatings) and blanks (with EUV multilayer coatings). These inspection results have proven useful in driving down the substrate and blank defect levels.

Status of EUVL mask development in Europe (Invited Paper)

NASA Astrophysics Data System (ADS)

Peters, Jan H.

2005-06-01

EUV lithography is the prime candidate for the next generation lithography technology after 193 nm immersion lithography. The commercial onset for this technology is expected for the 45 nm half-pitch technology or below. Several European and national projects and quite a large number of companies and research institutions in Europe work on various aspects of the technological challenges to make EUV a commercially viable technology in the not so far future. Here the development of EUV sources, the development of an EUV exposure tools, metrology tools dedicated for characterization of mask, the production of EUV mask blanks and the mask structuring itself are the key areas in which major activities can be found. In this talk we will primarily focus on those activities, which are related to establish an EUV mask supply chain with all its ingredients from substrate production, polishing, deposition of EUV layers, blank characterization, mask patterning process and the consecutive metrology and defect inspection as well as shipping and handling from blank supply to usage in the wafer fab. The EUV mask related projects on the national level are primarily supported by the French Ministry of Economics and Finance (MinEFi) and the German Ministry of Education and Research (BMBF).

EUV mask pilot line at Intel Corporation

NASA Astrophysics Data System (ADS)

Stivers, Alan R.; Yan, Pei-Yang; Zhang, Guojing; Liang, Ted; Shu, Emily Y.; Tejnil, Edita; Lieberman, Barry; Nagpal, Rajesh; Hsia, Kangmin; Penn, Michael; Lo, Fu-Chang

2004-12-01

The introduction of extreme ultraviolet (EUV) lithography into high volume manufacturing requires the development of a new mask technology. In support of this, Intel Corporation has established a pilot line devoted to encountering and eliminating barriers to manufacturability of EUV masks. It concentrates on EUV-specific process modules and makes use of the captive standard photomask fabrication capability of Intel Corporation. The goal of the pilot line is to accelerate EUV mask development to intersect the 32nm technology node. This requires EUV mask technology to be comparable to standard photomask technology by the beginning of the silicon wafer process development phase for that technology node. The pilot line embodies Intel's strategy to lead EUV mask development in the areas of the mask patterning process, mask fabrication tools, the starting material (blanks) and the understanding of process interdependencies. The patterning process includes all steps from blank defect inspection through final pattern inspection and repair. We have specified and ordered the EUV-specific tools and most will be installed in 2004. We have worked with International Sematech and others to provide for the next generation of EUV-specific mask tools. Our process of record is run repeatedly to ensure its robustness. This primes the supply chain and collects information needed for blank improvement.

SEMATECH EUVL mask program status

NASA Astrophysics Data System (ADS)

Yun, Henry; Goodwin, Frank; Huh, Sungmin; Orvek, Kevin; Cha, Brian; Rastegar, Abbas; Kearney, Patrick

2009-04-01

As we approach the 22nm half-pitch (hp) technology node, the industry is rapidly running out of patterning options. Of the several lithography techniques highlighted in the International Technology Roadmap for Semiconductors (ITRS), the leading contender for the 22nm hp insertion is extreme ultraviolet lithography (EUVL). Despite recent advances with EUV resist and improvements in source power, achieving defect free EUV mask blank and enabling the EUV mask infrastructure still remain critical issues. To meet the desired EUV high volume manufacturing (HVM) insertion target date of 2013, these obstacles must be resolved on a timely bases. Many of the EUV mask related challenges remain in the pre-competitive stage and a collaborative industry based consortia, such as SEMATECH can play an important role to enable the EUVL landscape. SEMATECH based in Albany, NY is an international consortium representing several of the largest manufacturers in the semiconductor market. Full members include Intel, Samsung, AMD, IBM, Panasonic, HP, TI, UMC, CNSE (College of Nanoscience and Engineering), and Fuller Road Management. Within the SEMATECH lithography division a major thrust is centered on enabling the EUVL ecosystem from mask development, EUV resist development and addressing EUV manufacturability concerns. An important area of focus for the SEMATECH mask program has been the Mask Blank Development Center (MBDC). At the MBDC key issues in EUV blank development such as defect reduction and inspection capabilities are actively pursued together with research partners, key suppliers and member companies. In addition the mask program continues a successful track record of working with the mask community to manage and fund critical mask tools programs. This paper will highlight recent status of mask projects and longer term strategic direction at the MBDC. It is important that mask technology be ready to support pilot line development HVM by 2013. In several areas progress has been made but a continued collaborative effort will be needed along with timely infrastructure investments to meet these challenging goals.

Method for characterizing mask defects using image reconstruction from X-ray diffraction patterns

DOEpatents

Hau-Riege, Stefan Peter [Fremont, CA

2007-05-01

The invention applies techniques for image reconstruction from X-ray diffraction patterns on the three-dimensional imaging of defects in EUVL multilayer films. The reconstructed image gives information about the out-of-plane position and the diffraction strength of the defect. The positional information can be used to select the correct defect repair technique. This invention enables the fabrication of defect-free (since repaired) X-ray Mo--Si multilayer mirrors. Repairing Mo--Si multilayer-film defects on mask blanks is a key for the commercial success of EUVL. It is known that particles are added to the Mo--Si multilayer film during the fabrication process. There is a large effort to reduce this contamination, but results are not sufficient, and defects continue to be a major mask yield limiter. All suggested repair strategies need to know the out-of-plane position of the defects in the multilayer.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Upadhyaya, Mihir; Jindal, Vibhu; Basavalingappa, Adarsh

The availability of defect-free masks is considered to be a critical issue for enabling extreme ultraviolet lithography (EUVL) as the next generation technology. Since completely defect-free masks will be hard to achieve, it is essential to have a good understanding of the printability of the native EUV mask defects. In this work, we performed a systematic study of native mask defects to understand the defect printability caused by them. The multilayer growth over native substrate mask blank defects was correlated to the multilayer growth over regular-shaped defects having similar profiles in terms of their width and height. To model themore » multilayer growth over the defects, a novel level-set multilayer growth model was used that took into account the tool deposition conditions of the Veeco Nexus ion beam deposition tool. The same tool was used for performing the actual deposition of the multilayer stack over the characterized native defects, thus ensuring a fair comparison between the actual multilayer growth over native defects, and modeled multilayer growth over regular-shaped defects. Further, the printability of the characterized native defects was studied with the SEMATECH-Berkeley Actinic Inspection Tool (AIT), an EUV mask-imaging microscope at Lawrence Berkeley National Laboratory (LBNL). Printability of the modeled regular-shaped defects, which were propagated up the multilayer stack using level-set growth model was studied using defect printability simulations implementing the waveguide algorithm. Good comparison was observed between AIT and the simulation results, thus demonstrating that multilayer growth over a defect is primarily a function of a defect’s width and height, irrespective of its shape. This would allow us to predict printability of the arbitrarily-shaped native EUV mask defects in a systematic and robust manner.« less

X-ray mask fabrication advancements at the Microlithographic Mask Development Center

NASA Astrophysics Data System (ADS)

Kimmel, Kurt R.; Hughes, Patrick J.

1996-05-01

The Microlithographic Mask Development Center (MMD) was established as the X-ray mask manufacturing facility at the IBM Microelectronics Division semiconductor fabricator in Essex Junction, Vermont. This center, in operation for over two years, produces high yielding, defect-free X-ray masks for competitive logic and memory products at 250nm groundrules and below. The MMD is a complete mask facility that manufactures silicon membrane mask blanks in the NIST format and finished masks with electroplated gold X-ray absorber. Mask patterning, with dimensions as small as 180 nm, is accomplished using IBM-built variable shaped spot e-beam systems. Masks are routinely inspected and repaired using state-of-the-art equipment: two KLA SEM Specs for defect inspection, a Leica LMS 2000 for image placement characterization, an Amray 2040c for image dimension characterization and a Micrion 8000 XMR for defect repair. This facility maintains a baseline mask process with daily production of 250nm, 32Mb SRAM line monitor masks for the continuous improvement of mask quality and processes. Development masks are produced for several semiconductor manufacturers including IBM, Motorola, Loral, and Sanders. Masks for 64Mb and 256Mb DRAM (IBM) and advanced logic/SRAM (IBM and Motorola) designs have also been delivered. This paper describes the MMD facility and its technical capabilities. Key manufacturing metrics such as mask turnaround time, parametric yield learning and defect reduction activities are highlighted. The challenges associated with improved mask quality, sub-180nm mask fabrication, and the transition to refractory metal absorber are discussed.

Method to repair localized amplitude defects in a EUV lithography mask blank

DOEpatents

Stearns, Daniel G.; Sweeney, Donald W.; Mirkarimi, Paul B.; Chapman, Henry N.

2005-11-22

A method and apparatus are provided for the repair of an amplitude defect in a multilayer coating. A significant number of layers underneath the amplitude defect are undamaged. The repair technique restores the local reflectivity of the coating by physically removing the defect and leaving a wide, shallow crater that exposes the underlying intact layers. The particle, pit or scratch is first removed the remaining damaged region is etched away without disturbing the intact underlying layers.

EUVL masks: paving the path for commercialization

NASA Astrophysics Data System (ADS)

Mangat, Pawitter J. S.; Hector, Scott D.

2001-09-01

Optical projection lithography has been the principal vehicle of semiconductor manufacturing for more than 20 years and is marching aggressively to satisfy the needs of semiconductor manufacturers for 100nm devices. However, the complexity of optical lithography continues to increase as wavelength reduction continues to 157nm. Extreme Ultraviolet Lithography (EUVL), with wavelength from 13-14 nm, is evolving as a leading next generation lithography option for semiconductor industry to stay on the path laid by Moore's Law. Masks are a critical part of the success of any technology and are considered to be high risk both for optical lithography and NGL technologies for sub-100nm lithography. Two key areas of EUV mask fabrication are reflective multilayer deposition and absorber patterning. In the case of reflective multilayers, delivering defect free multilayers for mask blanks is the biggest challenge. Defect mitigation is being explored as a possible option to smooth the multilayer defects in addition to optimization of the deposition process to reduce defect density. The mask patterning process needs focus on the defect-free absorber stack patterning process, mask cleaning, inspection and repair. In addition, there is considerable effort to understand by simulations, the defect printability, thermal and mechanical distortions, and non-telecentric illumination, to mention a few. To protect the finished mask from defects added during use, a removable pellicle strategy combined with thermophoretic protection during exposure is being developed. Recent migration to square form factor using low thermal expansion material (LTEM) is advantageous as historical developments in optical masks can be applied to EUV mask patterning. This paper addresses recent developments in the EUV mask patterning and highlights critical manufacturing process controls needed to fabricate defect-free full field masks with CD and image placement specifications for sub-70nm node lithography. No technology can be implemented without establishing the commercial infrastructure. The rising cost seems to be a major issue affecting the technology development. With respect to mask fabrication for commercial availability, a virtual mask shop analysis is presented that indicates that the process cost for EUVL masks are comparable to the high end optical mask with a reasonable yield. However, the cost for setting up a new mask facility is considerably high.

Progress on EUV mask fabrication for 32-nm technology node and beyond

NASA Astrophysics Data System (ADS)

Zhang, Guojing; Yan, Pei-Yang; Liang, Ted; Park, Seh-jin; Sanchez, Peter; Shu, Emily Y.; Ultanir, Erdem A.; Henrichs, Sven; Stivers, Alan; Vandentop, Gilroy; Lieberman, Barry; Qu, Ping

2007-05-01

Extreme ultraviolet lithography (EUVL) tool development achieved a big milestone last year as two full-field Alpha Demo Tools (ADT) were shipped to customers by ASML. In the future horizon, a full field "EUV1" exposure tool from Nikon will be available by the end of 20071 and the pre-production EUV exposure tools from ASML are targeted for 20092. It is essential that high quality EUVL masks can be made and delivered to the EUVL tool users to support the technology development. In the past year, we have demonstrated mask fabrication with low stress absorber deposition and good etch process control yielding a vertical etch profile and a mask CD control of 5.7 nm for 32 nm (1x) space and 7.4 nm for 32 nm (1x) lines. Mask pattern resolution of 15 nm (1x) dense lines was achieved. Full field reflective mask die-to-die inspection at a 125nm pixel size was demonstrated after low defect multilayer blanks became available. In this paper, we will present details of the Intel EUVL Mask Pilot Line progress in EUVL mask defect reduction, pattern CD performance, program defect mask design and inspection, in-house absorber film development and its performance, and EUVL metrology tool development. We will demonstrate an overall improvement in EUV mask manufacturing readiness due to our Pilot Line activities.

Plasma cleaning of nanoparticles from EUV mask materials by electrostatics

NASA Astrophysics Data System (ADS)

Lytle, W. M.; Raju, R.; Shin, H.; Das, C.; Neumann, M. J.; Ruzic, D. N.

2008-03-01

Particle contamination on surfaces used in extreme ultraviolet (EUV) mask blank deposition, mask fabrication, and patterned mask handling must be avoided since the contamination can create significant distortions and loss of reflectivity. Particles on the order of 10nm are problematic during MLM mirror fabrication, since the introduced defects disrupt the local Bragg planes. The most serious problem is the accumulation of particles on surfaces of patterned blanks during EUV light exposure, since > 25nm particles will be printed without an out-of-focus pellicle. Particle contaminants are also a problem with direct imprint processes since defects are printed every time. Plasma Assisted Cleaning by Electrostatics (PACE) works by utilizing a helicon plasma as well as a pulsed DC substrate bias to charge particle and repel them electrostatically from the surface. Removal of this nature is a dry cleaning method and removes contamination perpendicular from the surface instead of rolling or sweeping the particles off the surface, a benefit when cleaning patterned surfaces where contamination can be rolled or trapped between features. Also, an entire mask can be cleaned at once since the plasma can cover the entire surface, thus there is no need to focus in on an area to clean. Sophisticated particle contamination detection system utilizing high power laser called DEFCON is developed to analyze the particle removal after PACE cleaning process. PACE has shown greater than 90 % particle removal efficiencies for 30 to 220 nm PSL particles on ruthenium capped quartz. Removal results for silicon surfaces and quartz surfaces show similar removal efficiencies. Results of cleaning 80 nm PSL spheres from silicon substrates will be shown.

Lithographic qualification of high-transmission mask blank for 10nm node and beyond

NASA Astrophysics Data System (ADS)

Xu, Yongan; Faure, Tom; Viswanathan, Ramya; Lobb, Granger; Wistrom, Richard; Burns, Sean; Hu, Lin; Graur, Ioana; Bleiman, Ben; Fischer, Dan; Mignot, Yann; Sakamoto, Yoshifumi; Toda, Yusuke; Bolton, John; Bailey, Todd; Felix, Nelson; Arnold, John; Colburn, Matthew

2016-04-01

In this paper, we discuss the lithographic qualification of high transmission (High T) mask for Via and contact hole applications in 10nm node and beyond. First, the simulated MEEF and depth of focus (DoF) data are compared between the 6% and High T attnPSM masks with the transmission of High T mask blank varying from 12% to 20%. The 12% High T blank shows significantly better MEEF and larger DoF than those of 6% attnPSM mask blank, which are consistent with our wafer data. However, the simulations show no obvious advantage in MEEF and DoF when the blank transmittance is larger than 12%. From our wafer data, it has been seen that the common process window from High T mask is 40nm bigger than that from the 6% attnPSM mask. In the elongated bar structure with smaller aspect ratio, 1.26, the 12% High T mask shows significantly less develop CD pull back in the major direction. Compared to the High T mask, the optimized new illumination condition for 6% attnPSM shows limited improvement in MEEF and the DoF through pitch. In addition, by using the High T mask blank, we have also investigated the SRAF printing, side lobe printing and the resist profile through cross sections, and no patterning risk has been found for manufacturing. As part of this work new 12% High T mask blank materials and processes were developed, and a brief overview of key mask technology development results have been shared. Overall, it is concluded that the High T mask, 12% transmission, provides the most robust and extendable lithographic solution for 10nm node and beyond.

Particle protection capability of SEMI-compliant EUV-pod carriers

NASA Astrophysics Data System (ADS)

Huang, George; He, Long; Lystad, John; Kielbaso, Tom; Montgomery, Cecilia; Goodwin, Frank

2010-04-01

With the projected rollout of pre-production extreme ultraviolet lithography (EUVL) scanners in 2010, EUVL pilot line production will become a reality in wafer fabrication companies. Among EUVL infrastructure items that must be ready, EUV mask carriers remain critical. To keep non-pellicle EUV masks free from particle contamination, an EUV pod concept has been extensively studied. Early prototypes demonstrated nearly particle-free results at a 53 nm PSL equivalent inspection sensitivity during EUVL mask robotic handling, shipment, vacuum pump-purge, and storage. After the passage of SEMI E152, which specifies the EUV pod mechanical interfaces, standards-compliant EUV pod prototypes, including a production version inner pod and prototype outer pod, were built and tested. Their particle protection capability results are reported in this paper. A state-of-the-art blank defect inspection tool was used to quantify their defect protection capability during mask robotic handling, shipment, and storage tests. To ensure the availability of an EUV pod for 2010 pilot production, the progress and preliminary test results of pre-production EUV outer pods are reported as well.

Ultra-low roughness magneto-rheological finishing for EUV mask substrates

NASA Astrophysics Data System (ADS)

Dumas, Paul; Jenkins, Richard; McFee, Chuck; Kadaksham, Arun J.; Balachandran, Dave K.; Teki, Ranganath

2013-09-01

EUV mask substrates, made of titania-doped fused silica, ideally require sub-Angstrom surface roughness, sub-30 nm flatness, and no bumps/pits larger than 1 nm in height/depth. To achieve the above specifications, substrates must undergo iterative global and local polishing processes. Magnetorheological finishing (MRF) is a local polishing technique which can accurately and deterministically correct substrate figure, but typically results in a higher surface roughness than the current requirements for EUV substrates. We describe a new super-fine MRF® polishing fluid whichis able to meet both flatness and roughness specifications for EUV mask blanks. This eases the burden on the subsequent global polishing process by decreasing the polishing time, and hence the defectivity and extent of figure distortion.

Rapid iconic erasure without masking.

PubMed

Tijus, Charles Albert; Reeves, Adam

2004-01-01

We report on the erasure of the iconic memory of an array of 12 black letters flashed on a continuously- present white field. Erasure is accomplished by replacing the 16 ms letter array (frame 1) with a blank white frame for 16 ms (frame 2). The letter array returns in frame 3, with from one to six letters missing. Report of the missing letters is accurate without the blank white frame but is impoverished with it, as if interposing the blank erases the icon. Erasure occurs without any obvious luminance masking, 'mud splashes', pattern masking (backward, forward, or metacontrast), lateral masking, or masking by object substitution. Erasure is greatly decreased if the blank is presented one frame earlier or later. We speculate that erasure is due to a rapid reset of the icon produced by an informational mis-match.

Quartz 9-inch size mask blanks for ArF PSM (Phase Shift Mask)

NASA Astrophysics Data System (ADS)

Harashima, Noriyuki; Isozaki, Tatsuya; Kawanishi, Arata; Kanai, Shuichiro; Kageyama, Kagehiro; Iso, Hiroyuki; Chishima, Tatsuya

2017-07-01

Semiconductor technology nodes are steadily miniaturizing. On the other hand, various efforts have been made to reduce costs, mass production lines have shifted from 200 mmφ of Si wafer to 300 mmφ, and technology development of Si wafer 450 mmφ is also in progress. As a photomask, 6-inch size binary Cr mask has been used for many years, but in recent years, the use of 9-inch binary Cr masks for Proximity Lithography Process in automotive applications, MEMS, packages, etc. has increased, and cost reduction has been taken. Since the miniaturization will progress in the above applications in the future, products corresponding to miniaturization are also desired in 9-inch photomasks. The high grade Cr - binary mask blanks used in proximity exposure process, there is a prospect of being able to use it by ULVAC COATING CORPORATION's tireless research. As further demands for miniaturization, KrF and ArF Lithography Process, which are used for steppers and scanners , there are also a demand for 9-inch size Mask Blanks. In ULVAC COATING CORPORATION, we developed a 9 - inch size KrF PSM mask Blanks prototype in 2016 and proposed a new high grade 9 - inch photomask. This time, we have further investigated and developed 9-inch size ArF PSM Mask Blanks corresponding to ArF Lithography Process, so we report it.

EUV multilayer defect compensation (MDC) by absorber pattern modification: from theory to wafer validation

NASA Astrophysics Data System (ADS)

Pang, Linyong; Hu, Peter; Satake, Masaki; Tolani, Vikram; Peng, Danping; Li, Ying; Chen, Dongxue

2011-11-01

According to the ITRS roadmap, mask defects are among the top technical challenges to introduce extreme ultraviolet (EUV) lithography into production. Making a multilayer defect-free extreme ultraviolet (EUV) blank is not possible today, and is unlikely to happen in the next few years. This means that EUV must work with multilayer defects present on the mask. The method proposed by Luminescent is to compensate effects of multilayer defects on images by modifying the absorber patterns. The effect of a multilayer defect is to distort the images of adjacent absorber patterns. Although the defect cannot be repaired, the images may be restored to their desired targets by changing the absorber patterns. This method was first introduced in our paper at BACUS 2010, which described a simple pixel-based compensation algorithm using a fast multilayer model. The fast model made it possible to complete the compensation calculations in seconds, instead of days or weeks required for rigorous Finite Domain Time Difference (FDTD) simulations. Our SPIE 2011 paper introduced an advanced compensation algorithm using the Level Set Method for 2D absorber patterns. In this paper the method is extended to consider process window, and allow repair tool constraints, such as permitting etching but not deposition. The multilayer defect growth model is also enhanced so that the multilayer defect can be "inverted", or recovered from the top layer profile using a calibrated model.

Attenuated phase-shift mask (PSM) blanks for flat panel display

NASA Astrophysics Data System (ADS)

Kageyama, Kagehiro; Mochizuki, Satoru; Yamakawa, Hiroyuki; Uchida, Shigeru

2015-10-01

The fine pattern exposure techniques are required for Flat Panel display applications as smart phone, tablet PC recently. The attenuated phase shift masks (PSM) are being used for ArF and KrF photomask lithography technique for high end pattern Semiconductor applications. We developed CrOx based large size PSM blanks that has good uniformity on optical characteristics for FPD applications. We report the basic optical characteristics and uniformity, stability data of large sized CrOx PSM blanks.

Process optimization for particle removal on blank chrome mask plates in preparation for resist application

NASA Astrophysics Data System (ADS)

Osborne, Stephen; Smith, Eryn; Woster, Eric; Pelayo, Anthony

2002-03-01

As integrated circuits require smaller lines to provide the memory and processing capability for tomorrow's marketplace, the photomask industry is adopting higher contrast resists to improve photomask lithography. Photomask yield for several high-contrast resist recipes may be improved by coating masks at the mask shop. When coating at a mask shop, an effective method is available that uses coat/bake cluster tools to ensure blanks are clean prior to coating. Many high-contrast resists are available, and some are more susceptible to time-dependent performance factors than conventional resists. One of these factors is the time between coating and writing. Although future methods may reduce the impact of this factor, one current trend is to reduce this time by coating plates at the mask shop just prior to writing. Establishing an effective process to clean blanks prior to coating is necessary for product quality control and is a new task that is critical for maskmakers who previously purchased mask plates but have decided to begin coating them within their facility. This paper provides a strategy and method to be used within coat/bake cluster tools to remove particle contamination from mask blanks. The process uses excimer-UV ionizing radiation and ozone to remove organic contaminants, and then uses a wet process combined with megasonic agitation, surfactant, and spin forces. Megasonic agitation with surfactant lifts up particles, while the convective outflow of water enhances centripetal shear without accumulating harmful charge.

Theoretical Analysis on Mechanical Deformation of Membrane-Based Photomask Blanks

NASA Astrophysics Data System (ADS)

Marumoto, Kenji; Aya, Sunao; Yabe, Hedeki; Okada, Tatsunori; Sumitani, Hiroaki

2012-04-01

Membrane-based photomask is used in proximity X-ray lithography including that in LIGA (Lithographie, Galvanoformung und Abformung) process, and near-field photolithography. In this article, out-of-plane deformation (OPD) and in-plane displacement (IPD) of membrane-based photomask blanks are theoretically analyzed to obtain the mask blanks with flat front surface and low stress absorber film. First, we derived the equations of OPD and IPD for the processing steps of membrane-based photomask such as film deposition, back-etching and bonding, using a theory of symmetrical bending of circular plates with a coaxial circular hole and that of deformation of cylinder under hydrostatic pressure. The validity of the equations was proved by comparing the calculation results with experimental ones. Using these equations, we investigated the relation between the geometry of the mask blanks and the distortions generally, and gave the criterion to attain the flat front surface. Moreover, the absorber stress-bias required to obtain zero-stress on finished mask blanks was also calculated and it has been found that only little stress-bias was required for adequate hole size of support plate.

Formation mechanism of the photomask blanks material related haze

NASA Astrophysics Data System (ADS)

Kim, Jung-Jin; Choi, Junyoul; Koh, Soowan; Kim, Minho; Lee, Jiyoung; Lee, Han-Shin; Kim, Byung Gook; Jeon, Chan-uk

2016-05-01

We have observed a new type haze of which formation deviates from the generally accepted models with respect to the size, shape, and removability by chemicals. It has very small size of 50~100nm and are crowded around the cell boundary, while the typical haze doesn't prefer a special region on mask in the majority of cases. It is hard to remove by general cleaning, while the typical haze is easily removed by general cleaning process and even de-ionized water. It is confirmed that the source of the haze is blank material related ions which are formed by chemical etching of blanks during mask cleaning process or the photomask blanks itself.

Cost-effective masks for deep x-ray lithography

NASA Astrophysics Data System (ADS)

Scheunemann, Heinz-Ulrich; Loechel, Bernd; Jian, Linke; Schondelmaier, Daniel; Desta, Yohannes M.; Goettert, Jost

2003-04-01

The production of X-ray masks is one of the key techniques for X-ray lithography and the LIGA process. Different ways for the fabrication of X-ray masks has been established. Very sophisticated, difficult and expensive procedures are required to produce high precision and high quality X-ray masks. In order to minimize the cost of an X-ray mask, the mask blank must be inexpensive and readily available. The steps involved in the fabrication process must also be minimal. In the past, thin membranes made of titanium, silicon carbide, silicon nitride (2-5μm) or thick beryllium substrates (500μm) have been used as mask blanks. Thin titanium and silicon compounds have very high transparency for X-rays; therefore, these materials are predestined for use as mask membrane material. However, the handling and fabrication of thin membranes is very difficult, thus expensive. Beryllium is highly transparent to X-rays, but the processing and use of beryllium is risky due to potential toxicity. During the past few years graphite based X-ray masks have been in use at various research centers, but the sidewall quality of the generated resist patterns is in the range of 200-300 nm Ra. We used polished graphite to improve the sidewall roughness, but polished graphite causes other problems in the fabrication of X-ray masks. This paper describes the advantages associated with the use of polished graphite as mask blank as well as the fabrication process for this low cost X-ray mask. Alternative membrane materials will also be discussed.

High-speed atomic force microscopy and peak force tapping control

NASA Astrophysics Data System (ADS)

Hu, Shuiqing; Mininni, Lars; Hu, Yan; Erina, Natalia; Kindt, Johannes; Su, Chanmin

2012-03-01

ITRS Roadmap requires defect size measurement below 10 nanometers and challenging classifications for both blank and patterned wafers and masks. Atomic force microscope (AFM) is capable of providing metrology measurement in 3D at sub-nanometer accuracy but has long suffered from drawbacks in throughput and limitation of slow topography imaging without chemical information. This presentation focus on two disruptive technology developments, namely high speed AFM and quantitative nanomechanical mapping, which enables high throughput measurement with capability of identifying components through concurrent physical property imaging. The high speed AFM technology has allowed the imaging speed increase by 10-100 times without loss of the data quality. Such improvement enables the speed of defect review on a wafer to increase from a few defects per hour to nearly 100 defects an hour, approaching the requirements of ITRS Roadmap. Another technology development, Peak Force Tapping, substantially simplified the close loop system response, leading to self-optimization of most challenging samples groups to generate expert quality data. More importantly, AFM also simultaneously provides a series of mechanical property maps with a nanometer spatial resolution during defect review. These nanomechanical maps (including elastic modulus, hardness, and surface adhesion) provide complementary information for elemental analysis, differentiate defect materials by their physical properties, and assist defect classification beyond topographic measurements. This paper will explain the key enabling technologies, namely high speed tip-scanning AFM using innovative flexure design and control algorithm. Another critical element is AFM control using Peak Force Tapping, in which the instantaneous tip-sample interaction force is measured and used to derive a full suite of physical properties at each imaging pixel. We will provide examples of defect review data on different wafers and media disks. The similar AFM-based defect review capacity was also applied to EUV masks.

Photomask etch system and process for 10nm technology node and beyond

NASA Astrophysics Data System (ADS)

Chandrachood, Madhavi; Grimbergen, Michael; Yu, Keven; Leung, Toi; Tran, Jeffrey; Chen, Jeff; Bivens, Darin; Yalamanchili, Rao; Wistrom, Richard; Faure, Tom; Bartlau, Peter; Crawford, Shaun; Sakamoto, Yoshifumi

2015-10-01

While the industry is making progress to offer EUV lithography schemes to attain ultimate critical dimensions down to 20 nm half pitch, an interim optical lithography solution to address an immediate need for resolution is offered by various integration schemes using advanced PSM (Phase Shift Mask) materials including thin e-beam resist and hard mask. Using the 193nm wavelength to produce 10nm or 7nm patterns requires a range of optimization techniques, including immersion and multiple patterning, which place a heavy demand on photomask technologies. Mask schemes with hard mask certainly help attain better selectivity and hence better resolution but pose integration challenges and defectivity issues. This paper presents a new photomask etch solution for attenuated phase shift masks that offers high selectivity (Cr:Resist > 1.5:1), tighter control on the CD uniformity with a 3sigma value approaching 1 nm and controllable CD bias (5-20 nm) with excellent CD linearity performance (<5 nm) down to the finer resolution. The new system has successfully demonstrated capability to meet the 10 nm node photomask CD requirements without the use of more complicated hard mask phase shift blanks. Significant improvement in post wet clean recovery performance was demonstrated by the use of advanced chamber materials. Examples of CD uniformity, linearity, and minimum feature size, and etch bias performance on 10 nm test site and production mask designs will be shown.

High-sensitivity x-ray mask damage studies employing holographic gratings and phase-shifting interferometry

NASA Astrophysics Data System (ADS)

Hansen, Matthew E.; Cerrina, Franco

1994-05-01

A high-sensitivity holographic and interferometric metrology developed at the Center for X- ray Lithography (CXrL) has been employed to investigate in-plane distortions (IPD) produced in x-ray mask materials. This metrology has been applied to characterize damage to x-ray mask materials exposed to synchrotron radiation. X-ray mask damage and accelerated mask damage studies on silicon nitride and silicon carbide were conducted on the Aladdin ES-1 and ES-2 beamline exposure stations, respectively. Accumulated in-plane distortions due to x-ray irradiation were extracted from the incremental interferometric phase maps to yield IPD vs. dose curves for silicon nitride mask blanks. Silicon carbide mask blanks were subjected to accelerated mask damage in the high flux 2 mm X 2 mm beam of the ES-2 exposure station. An accelerated damage study of silicon carbide has shown no in-plane distortion for an accumulated dose of 800 kJ/cm2 with a measurement sensitivity of less than 5 nm.

Evaluation of TF11 attenuated-PSM mask blanks with DUV laser patterning

NASA Astrophysics Data System (ADS)

Xing, Kezhao; Björnberg, Charles; Karlsson, Henrik; Paulsson, Adisa; Beiming, Peter; Vedenpää, Jukka; Walford, Jonathan

2008-05-01

Tightening requirements on resolution, CD uniformity and positional accuracy push the development of improved photomask blanks. One such blank for 45nm node attenuated phase shift masks (att-PSM) provides a thinner chrome film, TF11, with a higher etch rate compared to previous generation NTAR5 att-PSM blanks from the same supplier. FEP-171, a positive chemically amplified resist, is commonly used in mask manufacturing for both e-beam and DUV laser pattern generators. TF11 chrome allows the FEP-171 resist thickness to be decreased at least down to 2000 Å while maintaining sufficient etch resistance, thereby improving photomask CD performance. The lower stress level in TF11 chrome films also reduces the image placement error induced by the material. In this study, TF11 chrome and FEP-171 resist are evaluated with exposures on a 248 nm DUV laser pattern generator, the Sigma7500. Patterning is first characterized for resist thicknesses of 2000 Å to 2600 Å in steps of 100 Å, assessing the minimum feature resolution, CD linearity, isolated-dense CD bias and dose sensitivity. Swing curve analysis shows a minimum near 2200 Å and a maximum near 2500 Å, corresponding closely to the reflectivity measurements provided by the blank supplier. The best overall patterning performance is obtained when operating near the swing maximum. The patterning performance is then studied in more detail with a resist thickness of 2550 Å that corresponds to the reflectivity maximum. This is compared to the results with 2000 Å resist, a standard thickness for e-beam exposures on TF11. The lithographic performance on NTAR5 att-PSM blanks with 3200 Å resist is also included for reference. This evaluation indicates that TF11 blanks with 2550 Å resist provide the best overall mask patterning performance obtained with the Sigma7500, showing a global CD uniformity below 4 nm (3s) and minimum feature resolution below 100 nm.

High speed reflectometer for EUV mask-blanks

NASA Astrophysics Data System (ADS)

Wies, Christian; Lebert, Rainer; Jagle, Bernhard; Juschkin, L.; Sobel, F.; Seitz, H.; Walter, Ronny; Laubis, C.; Scholze, F.; Biel, W.; Steffens, O.

2005-06-01

AIXUV GmbH and partners have developed a high speed Reflectometer for EUV mask-blanks which is fully compliant with the SEMI-standard P38 for EUV-mask-blank metrology. The system has been installed in June 2004 at SCHOTT Lithotec AG. It features high throughput, high lateral and spectral resolution, high reproducibility and low absolute uncertainty. Using AIXUV's EUV-LAMP and debris mitigation, low cost-of-ownership and high availability is expected. The spectral reflectance of up to 3 mask-blanks per hour can be measured with at least 20 spots each. The system is push button-controlled. Results are stored in CSV file format. For a spot size of 0.1x1 mm2, 2000 spectral channels of 1.6 pm bandwidth are recorded from 11.6 nm to 14.8 nm. The reflectance measurement is based on the comparison of the sample under test to two reference mirrors calibrated at the PTB radiometry laboratory at BESSY II. The three reflection spectra are recorded simultaneously. For each spot more than 107 photons are accumulated in about 20 s, providing statistical reproducibility below 0.2% RMS. The total uncertainty is below 0.5% absolute. Wavelength calibration better than 1 pm RMS over the whole spectral range is achieved by reference to NIST published wavelengths of about 100 xenon emission lines. It is consistent with the wavelength of the krypton 3d-5p absorption resonance at 13.5947 nm to better than 2 pm.

High speed reflectometer for EUV mask-blanks

NASA Astrophysics Data System (ADS)

Wies, C.; Lebert, R.; Jaegle, B.; Juschkin, L.; Sobel, F.; Seitz, H.; Walter, R.; Laubis, C.; Scholze, F.; Biel, W.; Steffens, O.

2005-05-01

AIXUV GmbH and partners have developed a high speed Reflectometer for EUV mask-blanks which is fully compliant with the SEMI-standard P38 for EUV-mask-blank metrology. The system has been installed in June 2004 at SCHOTT Lithotec AG. It features high throughput, high lateral and spectral resolution, high reproduci-bility and low absolute uncertainty. Using AIXUV's EUV-LAMP and debris mitigation, low cost-of-ownership and high availability is expected. The spectral reflectance of up to 3 mask-blanks per hour can be measured with at least 20 spots each. The system is push button-controlled. Results are stored in CSV file format. For a spot size of 0.1×1 mm2, 2000 spectral chan-nels of 1.6 pm bandwidth are recorded from 11.6 nm to 14.8 nm. The reflectance measurement is based on the comparison of the sample under test to two reference mirrors calibrated at the PTB radiometry laboratory at BESSY II. The three reflection spectra are recorded simultaneously. For each spot more than 107 photons are ac-cumulated in about 20 s, providing statistical reproducibility below 0.2 % RMS. The total uncertainty is below 0.5 % absolute. Wavelength calibration better than 1 pm RMS over the whole spectral range is achieved by refe-rence to NIST published wavelengths of about 100 xenon emission lines. It is consistent with the wavelength of the krypton 3d-5p absorption resonance at 13.5947 nm to better than 2 pm.

High-throughput automatic defect review for 300mm blank wafers with atomic force microscope

NASA Astrophysics Data System (ADS)

Zandiatashbar, Ardavan; Kim, Byong; Yoo, Young-kook; Lee, Keibock; Jo, Ahjin; Lee, Ju Suk; Cho, Sang-Joon; Park, Sang-il

2015-03-01

While feature size in lithography process continuously becomes smaller, defect sizes on blank wafers become more comparable to device sizes. Defects with nm-scale characteristic size could be misclassified by automated optical inspection (AOI) and require post-processing for proper classification. Atomic force microscope (AFM) is known to provide high lateral and the highest vertical resolution by mechanical probing among all techniques. However, its low throughput and tip life in addition to the laborious efforts for finding the defects have been the major limitations of this technique. In this paper we introduce automatic defect review (ADR) AFM as a post-inspection metrology tool for defect study and classification for 300 mm blank wafers and to overcome the limitations stated above. The ADR AFM provides high throughput, high resolution, and non-destructive means for obtaining 3D information for nm-scale defect review and classification.

Simulation based mask defect repair verification and disposition

NASA Astrophysics Data System (ADS)

Guo, Eric; Zhao, Shirley; Zhang, Skin; Qian, Sandy; Cheng, Guojie; Vikram, Abhishek; Li, Ling; Chen, Ye; Hsiang, Chingyun; Zhang, Gary; Su, Bo

2009-10-01

As the industry moves towards sub-65nm technology nodes, the mask inspection, with increased sensitivity and shrinking critical defect size, catches more and more nuisance and false defects. Increased defect counts pose great challenges in the post inspection defect classification and disposition: which defect is real defect, and among the real defects, which defect should be repaired and how to verify the post-repair defects. In this paper, we address the challenges in mask defect verification and disposition, in particular, in post repair defect verification by an efficient methodology, using SEM mask defect images, and optical inspection mask defects images (only for verification of phase and transmission related defects). We will demonstrate the flow using programmed mask defects in sub-65nm technology node design. In total 20 types of defects were designed including defects found in typical real circuit environments with 30 different sizes designed for each type. The SEM image was taken for each programmed defect after the test mask was made. Selected defects were repaired and SEM images from the test mask were taken again. Wafers were printed with the test mask before and after repair as defect printability references. A software tool SMDD-Simulation based Mask Defect Disposition-has been used in this study. The software is used to extract edges from the mask SEM images and convert them into polygons to save in GDSII format. Then, the converted polygons from the SEM images were filled with the correct tone to form mask patterns and were merged back into the original GDSII design file. This merge is for the purpose of contour simulation-since normally the SEM images cover only small area (~1 μm) and accurate simulation requires including larger area of optical proximity effect. With lithography process model, the resist contour of area of interest (AOI-the area surrounding a mask defect) can be simulated. If such complicated model is not available, a simple optical model can be used to get simulated aerial image intensity in the AOI. With built-in contour analysis functions, the SMDD software can easily compare the contour (or intensity) differences between defect pattern and normal pattern. With user provided judging criteria, this software can be easily disposition the defect based on contour comparison. In addition, process sensitivity properties, like MEEF and NILS, can be readily obtained in the AOI with a lithography model, which will make mask defect disposition criteria more intelligent.

An open-architecture approach to defect analysis software for mask inspection systems

NASA Astrophysics Data System (ADS)

Pereira, Mark; Pai, Ravi R.; Reddy, Murali Mohan; Krishna, Ravi M.

2009-04-01

Industry data suggests that Mask Inspection represents the second biggest component of Mask Cost and Mask Turn Around Time (TAT). Ever decreasing defect size targets lead to more sensitive mask inspection across the chip, thus generating too many defects. Hence, more operator time is being spent in analyzing and disposition of defects. Also, the fact that multiple Mask Inspection Systems and Defect Analysis strategies would typically be in use in a Mask Shop or a Wafer Foundry further complicates the situation. In this scenario, there is a need for a versatile, user friendly and extensible Defect Analysis software that reduces operator analysis time and enables correct classification and disposition of mask defects by providing intuitive visual and analysis aids. We propose a new vendor-neutral defect analysis software, NxDAT, based on an open architecture. The open architecture of NxDAT makes it easily extensible to support defect analysis for mask inspection systems from different vendors. The capability to load results from mask inspection systems from different vendors either directly or through a common interface enables the functionality of establishing correlation between inspections carried out by mask inspection systems from different vendors. This capability of NxDAT enhances the effectiveness of defect analysis as it directly addresses the real-life scenario where multiple types of mask inspection systems from different vendors co-exist in mask shops or wafer foundries. The open architecture also potentially enables loading wafer inspection results as well as loading data from other related tools such as Review Tools, Repair Tools, CD-SEM tools etc, and correlating them with the corresponding mask inspection results. A unique concept of Plug-In interface to NxDAT further enhances the openness of the architecture of NxDAT by enabling end-users to add their own proprietary defect analysis and image processing algorithms. The plug-in interface makes it possible for the end-users to make use of their collected knowledge through the years of experience in mask inspection process by encapsulating the knowledge into software utilities and plugging them into NxDAT. The plug-in interface is designed with the intent of enabling the pro-active mask defect analysis teams to build competitive differentiation into their defect analysis process while protecting their knowledge internally within their company. By providing interface with all major standard layout and mask data formats, NxDAT enables correlation of defect data on reticles with design and mask databases, further extending the effectiveness of defect analysis for D2DB inspection. NxDAT also includes many other advanced features for easy and fast navigation, visual display of defects, defect selection, multi-tier classification, defect clustering and gridding, sophisticated CD and contact measurement analysis, repeatability analysis such as adder analysis, defect trend, capture rate etc.

Advanced mask cleaning for 0.20-μm technology: an integrated user-supplier approach

NASA Astrophysics Data System (ADS)

Poschenrieder, Rudolf; Hay, Bernd; Beier, Matthias; Hourd, Andrew C.; Stuemer, Harald; Gairing, Thomas M.

1998-12-01

A newly developed photomask final cleaning system, STEAG HamaTech's Advanced Single Substrate Cleaner, ASC 500, was assessed and optimized at the Siemens mask shop in Munich, Germany, under production conditions within the Esprit European Semiconductor Equipment Assessment programme (SEA). The project was carried out together with the active participation of Compugraphics Intl. Ltd. (UK), DuPont Photomasks, Inc. (Germany; Photronics-MZD, Germany). The results of the assessment are presented, focusing on the cleaning performance at the 0.25 micrometer defect level on photomasks, equipment reliability and Cost of Ownership data. A reticle free of soft defects on glass and on chrome down to the 0.25 micrometer level requires an excellent cleaning process and the use of high-end inspection tools like the KLA STARlight. In order to get a full understanding of the nature of the detected features additional investigations on the blank quality have been carried out. These investigations include the questions whether a detection is a hard or a soft defect and whether small defects on chrome are able to move on the reticle surface. Final cleaning recipes have been optimized in respect to cleaning efficiency while maintaining high throughput and low Cost of Ownership. A benchmark comparison against other final cleaning tools at the partner's maskshops showed the leading data of the ASC 500. It was found that a cleaning program which includes several substrate flips and a combination of the available cleaning methods acid- dispense, water pressure jet clean, brush and megasonic clean was best suitable to achieve these goals. In particular the use of the brush unit was shown to improve the yield while not adding damage to the plate.

Evaluation of attenuated PSM photomask blanks with TF11 chrome and FEP-171 resist on a 248 nm DUV laser pattern generator

NASA Astrophysics Data System (ADS)

Xing, Kezhao; Björnborg, Charles; Karlsson, Henrik; Paulsson, Adisa; Rosendahl, Anna; Beiming, Peter; Vedenpää, Jukka; Walford, Jonathan; Newman, Tom

2007-10-01

Tighter requirements on mask resolution, CD and image positioning accuracy at and beyond the 45 nm technology node push the development of improved photomask blanks. One such blank for attenuated phase-shift masks (att-PSM) provides a thinner chrome film, named TF11, with higher chrome etch rate compared to the previous generation Att- PSM blank (NTAR5 chrome film) from the same supplier. Reduced stress in the chrome film also results in less image placement error induced by the material. FEP-171 is the positive chemically amplified resist (PCAR) that is most commonly used in advanced mask manufacturing with both 50 keV variable shaped e-beam (VSB) and DUV laser pattern generators. TF11 allows an FEP-171 resist film down to about 2000 Å thickness with sufficient etch resistance, while the standard resist thickness for NTAR5 is around 3000 Å. This work has experimentally evaluated the use of TF11 chrome and FEP-171 resist together with a 248 nm DUV laser pattern generator, the Sigma7500. First, patterning performance in resist with thicknesses from 2000 Å to 2600 Å, in steps of 100 Å, was tested with respect to swing curve and basic lithographic parameters including resolution, CD linearity, CD iso-dense bias and dose sensitivity. Patterning results on mask showed a swing minimum at around 2200 Å and a swing maximum at around 2500 Å, which correspond to reflectivity measurements for 248 nm wavelength performed by the blank supplier. It was concluded that the overall patterning performance was best close to the swing maximum. Thereafter the patterning performance using TF11 at two resist thicknesses, 2000 Å and 2550 Å, was studied in more detail and compared to performance using NTAR5 with 3200 Å resist. The evaluation showed that the Sigma7500-II offers good compatibility with TF11, especially using the optimized FEP-171 resist thickness of 2550 Å. It also showed that the patterning capability of the Sigma7500-II using TF11 and 2550 Å resist is improved compared to using NTAR5 and 3200 Å resist.

ILT based defect simulation of inspection images accurately predicts mask defect printability on wafer

NASA Astrophysics Data System (ADS)

Deep, Prakash; Paninjath, Sankaranarayanan; Pereira, Mark; Buck, Peter

2016-05-01

At advanced technology nodes mask complexity has been increased because of large-scale use of resolution enhancement technologies (RET) which includes Optical Proximity Correction (OPC), Inverse Lithography Technology (ILT) and Source Mask Optimization (SMO). The number of defects detected during inspection of such mask increased drastically and differentiation of critical and non-critical defects are more challenging, complex and time consuming. Because of significant defectivity of EUVL masks and non-availability of actinic inspection, it is important and also challenging to predict the criticality of defects for printability on wafer. This is one of the significant barriers for the adoption of EUVL for semiconductor manufacturing. Techniques to decide criticality of defects from images captured using non actinic inspection images is desired till actinic inspection is not available. High resolution inspection of photomask images detects many defects which are used for process and mask qualification. Repairing all defects is not practical and probably not required, however it's imperative to know which defects are severe enough to impact wafer before repair. Additionally, wafer printability check is always desired after repairing a defect. AIMSTM review is the industry standard for this, however doing AIMSTM review for all defects is expensive and very time consuming. Fast, accurate and an economical mechanism is desired which can predict defect printability on wafer accurately and quickly from images captured using high resolution inspection machine. Predicting defect printability from such images is challenging due to the fact that the high resolution images do not correlate with actual mask contours. The challenge is increased due to use of different optical condition during inspection other than actual scanner condition, and defects found in such images do not have correlation with actual impact on wafer. Our automated defect simulation tool predicts printability of defects at wafer level and automates the process of defect dispositioning from images captured using high resolution inspection machine. It first eliminates false defects due to registration, focus errors, image capture errors and random noise caused during inspection. For the remaining real defects, actual mask-like contours are generated using the Calibre® ILT solution [1][2], which is enhanced to predict the actual mask contours from high resolution defect images. It enables accurate prediction of defect contours, which is not possible from images captured using inspection machine because some information is already lost due to optical effects. Calibre's simulation engine is used to generate images at wafer level using scanner optical conditions and mask-like contours as input. The tool then analyses simulated images and predicts defect printability. It automatically calculates maximum CD variation and decides which defects are severe to affect patterns on wafer. In this paper, we assess the printability of defects for the mask of advanced technology nodes. In particular, we will compare the recovered mask contours with contours extracted from SEM image of the mask and compare simulation results with AIMSTM for a variety of defects and patterns. The results of printability assessment and the accuracy of comparison are presented in this paper. We also suggest how this method can be extended to predict printability of defects identified on EUV photomasks.

Wafer plane inspection for advanced reticle defects

NASA Astrophysics Data System (ADS)

Nagpal, Rajesh; Ghadiali, Firoz; Kim, Jun; Huang, Tracy; Pang, Song

2008-05-01

Readiness of new mask defect inspection technology is one of the key enablers for insertion & transition of the next generation technology from development into production. High volume production in mask shops and wafer fabs demands a reticle inspection system with superior sensitivity complemented by a low false defect rate to ensure fast turnaround of reticle repair and defect disposition (W. Chou et al 2007). Wafer Plane Inspection (WPI) is a novel approach to mask defect inspection, complementing the high resolution inspection capabilities of the TeraScanHR defect inspection system. WPI is accomplished by using the high resolution mask images to construct a physical mask model (D. Pettibone et al 1999). This mask model is then used to create the mask image in the wafer aerial plane. A threshold model is applied to enhance the inspectability of printing defects. WPI can eliminate the mask restrictions imposed on OPC solutions by inspection tool limitations in the past. Historically, minimum image restrictions were required to avoid nuisance inspection stops and/or subsequent loss of sensitivity to defects. WPI has the potential to eliminate these limitations by moving the mask defect inspections to the wafer plane. This paper outlines Wafer Plane Inspection technology, and explores the application of this technology to advanced reticle inspection. A total of twelve representative critical layers were inspected using WPI die-to-die mode. The results from scanning these advanced reticles have shown that applying WPI with a pixel size of 90nm (WPI P90) captures all the defects of interest (DOI) with low false defect detection rates. In validating CD predictions, the delta CDs from WPI are compared against Aerial Imaging Measurement System (AIMS), where a good correlation is established between WPI and AIMSTM.

The verification of printability about marginal defects and the detectability at the inspection tool in sub 50nm node

NASA Astrophysics Data System (ADS)

Lee, Hyemi; Jeong, Goomin; Seo, Kangjun; Kim, Sangchul; kim, changreol

2008-05-01

Since mask design rule is smaller and smaller, Defects become one of the issues dropping the mask yield. Furthermore controlled defect size become smaller while masks are manufactured. According to ITRS roadmap on 2007, controlled defect size is 46nm in 57nm node and 36nm in 45nm node on a mask. However the machine development is delayed in contrast with the speed of the photolithography development. Generally mask manufacturing process is divided into 3 parts. First part is patterning on a mask and second part is inspecting the pattern and repairing the defect on the mask. At that time, inspection tools of transmitted light type are normally used and are the most trustful as progressive type in the developed inspection tools until now. Final part is shipping the mask after the qualifying the issue points and weak points. Issue points on a mask are qualified by using the AIMS (Aerial image measurement system). But this system is including the inherent error possibility, which is AIMS measures the issue points based on the inspection results. It means defects printed on a wafer are over the specific size detected by inspection tools and the inspection tool detects the almost defects. Even though there are no tools to detect the 46nm and 36nm defects suggested by ITRS roadmap, this assumption is applied to manufacturing the 57nm and 45nm device. So we make the programmed defect mask consisted with various defect type such as spot, clear extension, dark extension and CD variation on L/S(line and space), C/H(contact hole) and Active pattern in 55nm and 45nm node. And the programmed defect mask was inspected by using the inspection tool of transmitted light type and was measured by using AIMS 45-193i. Then the marginal defects were compared between the inspection tool and AIMS. Accordingly we could verify whether defect size is proper or not, which was suggested to be controlled on a mask by ITRS roadmap. Also this result could suggest appropriate inspection tools for next generation device among the inspection tools of transmitted light type, reflected light type and aerial image type.

Prospect of EUV mask repair technology using e-beam tool

NASA Astrophysics Data System (ADS)

Kanamitsu, Shingo; Hirano, Takashi; Suga, Osamu

2010-09-01

Currently, repair machines used for advanced photomasks utilize principle method like as FIB, AFM, and EB. There are specific characteristic respectively, thus they have an opportunity to be used in suitable situation. But when it comes to EUV generation, pattern size is so small highly expected as under 80nm that higher image resolution and repair accuracy is needed for its machines. Because FIB machine has intrinsic damage problem induced by Ga ion and AFM machine has critical tip size issue, those machines are basically difficult to be applied for EUV generation. Consequently, we focused on EB repair tool for research work. EB repair tool has undergone practical milestone about MoSi based masks. We have applied same process which is used for MoSi to EUV blank and confirmed its reaction. Then we found some severe problems which show uncontrollable feature due to its enormously strong reaction between etching gas and absorber material. Though we could etch opaque defect with conventional method and get the edge shaped straight by top-down SEM viewing, there were problems like as sidewall undercut or local erosion depending on defect shape. In order to cope with these problems, the tool vender has developed a new process and reported it through an international conference [1]. We have evaluated the new process mentioned above in detail. In this paper, we will bring the results of those evaluations. Several experiments for repair accuracy, process stability, and other items have been done under estimation of practical condition assuming diversified size and shape defects. A series of actual printability tests will be also included. On the basis of these experiments, we consider the possibility of EB-repair application for 20nm pattern.

Extension of optical lithography by mask-litho integration with computational lithography

NASA Astrophysics Data System (ADS)

Takigawa, T.; Gronlund, K.; Wiley, J.

2010-05-01

Wafer lithography process windows can be enlarged by using source mask co-optimization (SMO). Recently, SMO including freeform wafer scanner illumination sources has been developed. Freeform sources are generated by a programmable illumination system using a micro-mirror array or by custom Diffractive Optical Elements (DOE). The combination of freeform sources and complex masks generated by SMO show increased wafer lithography process window and reduced MEEF. Full-chip mask optimization using source optimized by SMO can generate complex masks with small variable feature size sub-resolution assist features (SRAF). These complex masks create challenges for accurate mask pattern writing and low false-defect inspection. The accuracy of the small variable-sized mask SRAF patterns is degraded by short range mask process proximity effects. To address the accuracy needed for these complex masks, we developed a highly accurate mask process correction (MPC) capability. It is also difficult to achieve low false-defect inspections of complex masks with conventional mask defect inspection systems. A printability check system, Mask Lithography Manufacturability Check (M-LMC), is developed and integrated with 199-nm high NA inspection system, NPI. M-LMC successfully identifies printable defects from all of the masses of raw defect images collected during the inspection of a complex mask. Long range mask CD uniformity errors are compensated by scanner dose control. A mask CD uniformity error map obtained by mask metrology system is used as input data to the scanner. Using this method, wafer CD uniformity is improved. As reviewed above, mask-litho integration technology with computational lithography is becoming increasingly important.

Improvement in defect classification efficiency by grouping disposition for reticle inspection

NASA Astrophysics Data System (ADS)

Lai, Rick; Hsu, Luke T. H.; Chang, Peter; Ho, C. H.; Tsai, Frankie; Long, Garrett; Yu, Paul; Miller, John; Hsu, Vincent; Chen, Ellison

2005-11-01

As the lithography design rule of IC manufacturing continues to migrate toward more advanced technology nodes, the mask error enhancement factor (MEEF) increases and necessitates the use of aggressive OPC features. These aggressive OPC features pose challenges to reticle inspection due to high false detection, which is time-consuming for defect classification and impacts the throughput of mask manufacturing. Moreover, higher MEEF leads to stricter mask defect capture criteria so that new generation reticle inspection tool is equipped with better detection capability. Hence, mask process induced defects, which were once undetectable, are now detected and results in the increase of total defect count. Therefore, how to review and characterize reticle defects efficiently is becoming more significant. A new defect review system called ReviewSmart has been developed based on the concept of defect grouping disposition. The review system intelligently bins repeating or similar defects into defect groups and thus allows operators to review massive defects more efficiently. Compared to the conventional defect review method, ReviewSmart not only reduces defect classification time and human judgment error, but also eliminates desensitization that is formerly inevitable. In this study, we attempt to explore the most efficient use of ReviewSmart by evaluating various defect binning conditions. The optimal binning conditions are obtained and have been verified for fidelity qualification through inspection reports (IRs) of production masks. The experiment results help to achieve the best defect classification efficiency when using ReviewSmart in the mask manufacturing and development.

Effects of Blank Curvature and Tool Conditions on the Spring Back of Thin Sheet Panel Formed through Local Embossing and Edge L-Bending

NASA Astrophysics Data System (ADS)

Park, Keecheol; Park, Jongyoun; Nam, Jaebok

2011-08-01

Due to the application of thinner sheet steels, the stamped panels in the forming process, generally, are severely distorted. The wavy shape of embossed panel finally converted to residual stress embedded in the panel at final forming (edge L-bending) and it is known as the cause of twisting and oil canning of spring backed panel. Another important source of stamped shape deviation is the curvature of blank. The effects of blank curvature on the shape defects (panel curvature and twisting) after stamping were investigated from defective panel analysis, model experiment and stamping simulation. And the effect of tool conditions (BHF and bead height change) on spring backed shape of real TV bottom chassis were studied. The initial curvature of blank was remained in the flat area of stamped panels as width directional curvature. It converted from length direction curvature of blank. The curvature of initial blank reduced the wavy shape after local emboss forming, but twisting after edge L-bending was increased at large blank curvature cases. The effects of emboss forming conditions, the forming heights and blank holding force were studied and it was found that the wavy shape of stamped sheet was rapidly changed although the forming conditions altered very small amount.

Classification and printability of EUV mask defects from SEM images

NASA Astrophysics Data System (ADS)

Cho, Wonil; Price, Daniel; Morgan, Paul A.; Rost, Daniel; Satake, Masaki; Tolani, Vikram L.

2017-10-01

Classification and Printability of EUV Mask Defects from SEM images EUV lithography is starting to show more promise for patterning some critical layers at 5nm technology node and beyond. However, there still are many key technical obstacles to overcome before bringing EUV Lithography into high volume manufacturing (HVM). One of the greatest obstacles is manufacturing defect-free masks. For pattern defect inspections in the mask-shop, cutting-edge 193nm optical inspection tools have been used so far due to lacking any e-beam mask inspection (EBMI) or EUV actinic pattern inspection (API) tools. The main issue with current 193nm inspection tools is the limited resolution for mask dimensions targeted for EUV patterning. The theoretical resolution limit for 193nm mask inspection tools is about 60nm HP on masks, which means that main feature sizes on EUV masks will be well beyond the practical resolution of 193nm inspection tools. Nevertheless, 193nm inspection tools with various illumination conditions that maximize defect sensitivity and/or main-pattern modulation are being explored for initial EUV defect detection. Due to the generally low signal-to-noise in the 193nm inspection imaging at EUV patterning dimensions, these inspections often result in hundreds and thousands of defects which then need to be accurately reviewed and dispositioned. Manually reviewing each defect is difficult due to poor resolution. In addition, the lack of a reliable aerial dispositioning system makes it very challenging to disposition for printability. In this paper, we present the use of SEM images of EUV masks for higher resolution review and disposition of defects. In this approach, most of the defects detected by the 193nm inspection tools are first imaged on a mask SEM tool. These images together with the corresponding post-OPC design clips are provided to KLA-Tencor's Reticle Decision Center (RDC) platform which provides ADC (Automated Defect Classification) and S2A (SEM-to-Aerial printability) analysis of every defect. First, a defect-free or reference mask SEM is rendered from the post-OPC design, and the defective signature is detected from the defect-reference difference image. These signatures help assess the true nature of the defect as evident in e-beam imaging; for example, excess or missing absorber, line-edge roughness, contamination, etc. Next, defect and reference contours are extracted from the grayscale SEM images and fed into the simulation engine with an EUV scanner model to generate corresponding EUV defect and reference aerial images. These are then analyzed for printability and dispositioned using an Aerial Image Analyzer (AIA) application to automatically measure and determine the amount of CD errors. Thus by integrating EUV ADC and S2A applications together, every defect detection is characterized for its type and printability which is essential for not only determining which defects to repair, but also in monitoring the performance of EUV mask process tools. The accuracy of the S2A print modeling has been verified with other commercially-available simulators, and will also be verified with actual wafer print results. With EUV lithography progressing towards volume manufacturing at 5nm technology, and the likelihood of EBMI inspectors approaching the horizon, the EUV ADC-S2A system will continue serving an essential role of dispositioning defects off e-beam imaging.

Evaluating practical vs. theoretical inspection system capability with a new programmed defect test mask designed for 3X and 4X technology nodes

NASA Astrophysics Data System (ADS)

Glasser, Joshua; Pratt, Tim

2008-10-01

Programmed defect test masks serve the useful purpose of evaluating inspection system sensitivity and capability. It is widely recognized that when evaluating inspection system capability, it is important to understand the actual sensitivity of the inspection system in production; yet unfortunately we have observed that many test masks are a more accurate judge of theoretical sensitivity rather than real-world usable capability. Use of ineffective test masks leave the purchaser of inspection equipment open to the risks of over-estimating the capability of their inspection solution and overspecifying defect sensitivity to their customers. This can result in catastrophic yield loss for device makers. In this paper we examine some of the lithography-related technology advances which place an increasing burden on mask inspection complexity, such as MEEF, defect printability estimation, aggressive OPC, double patterning, and OPC jogs. We evaluate the key inspection system component contributors to successful mask inspection, including what can "go wrong" with these components. We designed and fabricated a test mask which both (a) more faithfully represents actual production use cases; and (b) stresses the key components of the inspection system. This mask's patterns represent 32nm, 36nm, and 45nm logic and memory technology including metal and poly like background patterns with programmed defects. This test mask takes into consideration requirements of advanced lithography, such as MEEF, defect printability, assist features, nearly-repetitive patterns, and data preparation. This mask uses patterns representative of 32nm, 36nm, and 45nm logic, flash, and DRAM technology. It is specifically designed to have metal and poly like background patterns with programmed defects. The mask is complex tritone and was designed for annular immersion lithography.

Green binary and phase shifting mask

NASA Astrophysics Data System (ADS)

Shy, S. L.; Hong, Chao-Sin; Wu, Cheng-San; Chen, S. J.; Wu, Hung-Yu; Ting, Yung-Chiang

2009-12-01

SixNy/Ni thin film green mask blanks were developed , and are now going to be used to replace general chromium film used for binary mask as well as to replace molydium silicide embedded material for AttPSM for I-line (365 nm), KrF (248 nm), ArF (193 nm) and Contact/Proximity lithography. A bilayer structure of a 1 nm thick opaque, conductive nickel layer and a SixNy layer is proposed for binary and phase-shifting mask. With the good controlling of plasma CVD of SixNy under silane (50 sccm), ammonia (5 sccm) and nitrogen (100 sccm), the pressure is 250 mTorr. and RF frequency 13.56 MHz and power 50 W. SixNy has enough deposition latitude to meet the requirements as an embedded layer for required phase shift 180 degree, and the T% in 193, 248 and 365 nm can be adjusted between 2% to 20% for binary and phase shifting mask usage. Ni can be deposited by E-gun, its sheet resistance Rs is less than 1.435 kΩ/square. Jeol e-beam system and I-line stepper are used to evaluate these thin film green mask blanks, feature size less than 200 nm half pitch pattern and 0.558 μm pitch contact hole can be printed. Transmission spectrums of various thickness of SixNy film are inspected by using UV spectrometer and FTIR. Optical constants of the SixNy film are measured by n & k meter and surface roughness is inspected by using Atomic Force Microscope (AFM).

Automated mask and wafer defect classification using a novel method for generalized CD variation measurements

NASA Astrophysics Data System (ADS)

Verechagin, V.; Kris, R.; Schwarzband, I.; Milstein, A.; Cohen, B.; Shkalim, A.; Levy, S.; Price, D.; Bal, E.

2018-03-01

Over the years, mask and wafers defects dispositioning has become an increasingly challenging and time consuming task. With design rules getting smaller, OPC getting complex and scanner illumination taking on free-form shapes - the probability of a user to perform accurate and repeatable classification of defects detected by mask inspection tools into pass/fail bins is reducing. The critical challenging of mask defect metrology for small nodes ( < 30 nm) was reviewed in [1]. While Critical Dimension (CD) variation measurement is still the method of choice for determining a mask defect future impact on wafer, the high complexity of OPCs combined with high variability in pattern shapes poses a challenge for any automated CD variation measurement method. In this study, a novel approach for measurement generalization is presented. CD variation assessment performance is evaluated on multiple different complex shape patterns, and is benchmarked against an existing qualified measurement methodology.

High-contrast coronagraph performance in the presence of focal plane mask defects

NASA Astrophysics Data System (ADS)

Sidick, Erkin; Shaklan, Stuart; Balasubramanian, Kunjithapatham; Cady, Eric

2014-08-01

We have carried out a study of the performance of high-contrast coronagraphs in the presence of mask defects. We have considered the effects of opaque and dielectric particles of various dimensions, as well as systematic mask fabrication errors and the limitations of material properties in creating dark holes. We employ sequential deformable mirrors to compensate for phase and amplitude errors, and show the limitations of this approach in the presence of coronagraph image-mask defects.

Pattern Inspection of EUV Masks Using DUV Light

NASA Astrophysics Data System (ADS)

Liang, Ted; Tejnil, Edita; Stivers, Alan R.

2002-12-01

Inspection of extreme ultraviolet (EUV) lithography masks requires reflected light and this poses special challenges for inspection tool suppliers as well as for mask makers. Inspection must detect all the printable defects in the absorber pattern as well as printable process-related defects. Progress has been made under the NIST ATP project on "Intelligent Mask Inspection Systems for Next Generation Lithography" in assessing the factors that impact the inspection tool sensitivity. We report in this paper the inspection of EUV masks with programmed absorber defects using 257nm light. All the materials of interests for masks are highly absorptive to EUV light as compared to deep ultraviolet (DUV) light. Residues and contamination from mask fabrication process and handling are prone to be printable. Therefore, it is critical to understand their EUV printability and optical inspectability. Process related defects may include residual buffer layer such as oxide, organic contaminants and possible over-etch to the multilayer surface. Both simulation and experimental results will be presented in this paper.

Single closed contact for 0.18-micron photolithography process

NASA Astrophysics Data System (ADS)

Cheung, Cristina; Phan, Khoi A.; Chiu, Robert J.

2000-06-01

With the rapid advances of deep submicron semiconductor technology, identifying defects is converted into a challenge for different modules in the fabrication of chips. Yield engineers often do bitmap on a memory circuit array (SRAM) to identify the failure bits. This is followed by a wafer stripback to look for visual defects at each deprocessed layer for feedback to the Fab. However, to identify the root cause of a problem, Fab engineers must be able to detect similar defects either on the product wafers in process or some short loop test wafers. In the photolithography process, we recognize that the detection of defects is becoming as important as satisfying the critical dimension (CD) of the device. For a multi-level metallization chemically mechanical polish backend process, it is very difficult to detect missing contacts or via at the masking steps due to metal grain roughness, film color variation and/or previous layer defects. Often, photolithography engineer must depend on Photo Cell Monitor (PCM) and short loop experiments for controlling baseline defects and improvement. In this paper, we discuss the findings on the Poly mask PCM and the Contact mask PCM. We present the comparison between the Poly mask and the Contact mask of the I-line Phase Shifted Via mask and DUV mask process for a 0.18 micron process technology. The correlation and the different type of defects between the Contact PCM and the Poly Mask are discussed. The Contact PCM was found to be more sensitive and correlated to contact failure at sort yield better. We also dedicate to study the root cause of a single closed contact hole in the Contact mask short loop experiment for a 0.18 micron process technology. A single closed contact defect was often caused by the developer process, such as bubbles in the line, resist residue left behind, and the rinse mechanism. We also found surfactant solution helps to improve the surface tension of the wafer for the developer process and this prevents/eliminates a single closed contact hole defects. The applications and effects of using different substrates like SiON, different thicknesses of Oxides, and Poly in the Contact Photo Mask is shown. Finally, some defect troubleshooting techniques and the root cause analysis are also discussed.

Comparison of binary mask defect printability analysis using virtual stepper system and aerial image microscope system

NASA Astrophysics Data System (ADS)

Phan, Khoi A.; Spence, Chris A.; Dakshina-Murthy, S.; Bala, Vidya; Williams, Alvina M.; Strener, Steve; Eandi, Richard D.; Li, Junling; Karklin, Linard

1999-12-01

As advanced process technologies in the wafer fabs push the patterning processes toward lower k1 factor for sub-wavelength resolution printing, reticles are required to use optical proximity correction (OPC) and phase-shifted mask (PSM) for resolution enhancement. For OPC/PSM mask technology, defect printability is one of the major concerns. Current reticle inspection tools available on the market sometimes are not capable of consistently differentiating between an OPC feature and a true random defect. Due to the process complexity and high cost associated with the making of OPC/PSM reticles, it is important for both mask shops and lithography engineers to understand the impact of different defect types and sizes to the printability. Aerial Image Measurement System (AIMS) has been used in the mask shops for a number of years for reticle applications such as aerial image simulation and transmission measurement of repaired defects. The Virtual Stepper System (VSS) provides an alternative method to do defect printability simulation and analysis using reticle images captured by an optical inspection or review system. In this paper, pre- programmed defects and repairs from a Defect Sensitivity Monitor (DSM) reticle with 200 nm minimum features (at 1x) will be studied for printability. The simulated resist lines by AIMS and VSS are both compared to SEM images of resist wafers qualitatively and quantitatively using CD verification.Process window comparison between unrepaired and repaired defects for both good and bad repair cases will be shown. The effect of mask repairs to resist pattern images for the binary mask case will be discussed. AIMS simulation was done at the International Sematech, Virtual stepper simulation at Zygo and resist wafers were processed at AMD-Submicron Development Center using a DUV lithographic process for 0.18 micrometer Logic process technology.

Take a byte out of MEEF: VAMPIRE: Vehicle for Advanced Mask Pattern Inspection Readiness Evaluations

NASA Astrophysics Data System (ADS)

Badger, Karen D.; Rankin, Jed; Turley, Christina; Seki, Kazunori; Dechene, Dan J.; Abdelghany, Hesham

2016-09-01

MEEF, or Mask Error Enhancement Factor, is simply defined as the ratio of the change in printed wafer feature width to the change in mask feature width scaled to wafer level. It is important in chip manufacturing that leads to the amplification of mask errors, creating challenges with both achieving dimensional control tolerances and ensuring defect free masks, as measured by on-wafer image quality. As lithographic imaging continues to be stressed, using lower and lower k1 factor resolution enhancement techniques, the high MEEF areas present on advanced optical masks creates an environment where the need for increased mask defect sensitivity in high-MEEF areas becomes more and more critical. There are multiple approaches to mask inspection that may or may not provide enough sensitivity to detect all wafer-printable defects; the challenge in the application of these techniques is simultaneously maintaining an acceptable level of mask inspectability. The higher the MEEF, the harder the challenge will be to achieve and appropriate level of sensitivity while maintaining inspectability…and to do so on the geometries that matter. The predominant photomask fabrication inspection approach in use today compares the features on the reticle directly with the design database using high-NA optics. This approach has the ability to detect small defects, however, when inspecting aggressive OPC, it can lead to the over-detection of inconsequential, or nuisance defects. To minimize these nuisance detections, changing the sensitivity of the inspection can improve the inspectability of a mask inspected in high-NA mode, however, it leads to the inability to detect subtle, yet wafer-printable defects in High-MEEF geometry, due to the fact that this `desense' must be applied globally. There are also `lithography-emulating' approaches to inspection that use various means to provide high defect sensitivity and the ability to tolerate inconsequential, non-printing defects by using scanner-like conditions to determine which defects are wafer printable. This inspection technique is commonly referred to as being `lithography plane' or `litho plane,' since it's assessing the mask quality based on how the mask appears to the imaging optics during use, as proposed to traditional `reticle plane' inspection which is comparing the mask only with its target design. Regardless of how the defects are detected, the real question is when should they be detected? For larger technology nodes, defects are considered `statistical risks'…i.e., first they have to occur, and then they have to fall in high-MEEF areas in order to be of concern, and be below the detection limits of traditional reticle-plane inspection. In short, the `perfect storm' has to happen in order to miss printable defects using well-optimized traditional inspection approaches. The introduction of lithographic inspection techniques has revealed this statistical game is a much higher risk than originally estimated, in that very subtle waferprintable CD errors typically fall into the desense band for traditional reticle plane inspection. Because printability is largely influenced by MEEF, designs with high-MEEF values are at greater risk of traditional inspection missing printable CD errors. The question is… how high is high… and at what MEEF is optical inspection at the reticle plane sufficient? This paper will provide evaluation results for both reticle-plane and litho-plane inspections as they pertain to varying degrees of MEEF. A newly designed high-MEEF programmed defect test mask, named VAMPIRE, will be introduced. This test mask is based on 7 nm node technology and contains intentionally varying degrees of MEEF as well as a variety of programmed defects in high-MEEF environments…all of which have been verified for defect lithographic significance on a Zeiss AIMS system.

Defect reduction for semiconductor memory applications using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Ye, Zhengmao; Luo, Kang; Lu, Xiaoming; Fletcher, Brian; Liu, Weijun; Xu, Frank; LaBrake, Dwayne; Resnick, Douglas J.; Sreenivasan, S. V.

2012-07-01

Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the defect specifications of high-end memory devices. Defects occurring during imprinting can generally be broken into two categories; random defects and repeating defects. Examples of random defects include fluid phase imprint defects, such as bubbles, and solid phase imprint defects, such as line collapse. Examples of repeater defects include mask fabrication defects and particle induced defects. Previous studies indicated that soft particles cause nonrepeating defects. Hard particles, on the other hand, can cause either permanent resist plugging or mask damage. In a previous study, two specific defect types were examined; random nonfill defects occurring during the resist filling process and repeater defects caused by interactions with particles on the substrate. We attempted to identify the different types of imprint defect types using a mask with line/space patterns at dimensions as small as 26 nm. An Imprio 500 twenty-wafer per hour development tool was used to study the various defect types. The imprint defect density was reduced nearly four orders of magnitude, down to ˜4/cm2 in a period of two years following the availability of low defect imprint masks at 26-nm half-pitch. This reduction was achieved by identifying the root cause of various defects and then taking the appropriate corrective action.

Improving the Quality of Cast Ingot for the Production of Defect-Free Rolled and Polished Blanks of Silver-Copper Coinage Alloy

NASA Astrophysics Data System (ADS)

Chakrabarti, Debalay; Chakrabarti, Ajit Kumar; Roy, Sanat Kumar

2018-05-01

The causes of defect generation in Ag-7.5 wt% Cu coinage alloy billets and in rolled and polished blanks were evaluated in this paper. Microstructural and compositional study of the as-cast billets indicated that excessive formation of gas-porosity and shrinkage cavity was responsible for crack formation during rolling. Carbon pick-up from charcoal flux cover used during melting, formation of CuS inclusions due to high-S content and rapid work-hardening also contributed to cracking during rolling. In order to prevent the defect generation, several measures were adopted. Those measures significantly reduced the defect generation and improved the surface luster of the trial rolled strips.

Color masking of developmental enamel defects: a case series.

PubMed

Torres, C R G; Borges, A B

2015-01-01

Developmental defects involving color alteration of enamel frequently compromise the esthetic appearance of the tooth. The resin infiltration technique represents an alternative treatment for color masking of these lesions and uniformization of tooth color. This technique is considered relatively simple and microinvasive, since only a minimal portion of enamel is removed. This article illustrates the color-masking effect with resin infiltration of fluorosis and traumatic hypomineralization lesions with a case series. The final esthetic outcomes demonstrated the ability of the resin infiltrant to mask the color of white developmental defect lesions, resulting in satisfactory clinical esthetic improvements. However, in more severe cases, the color-masking effect was not complete.

Actinic imaging and evaluation of phase structures on EUV lithography masks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mochi, Iacopo; Goldberg, Kenneth; Huh, Sungmin

2010-09-28

The authors describe the implementation of a phase-retrieval algorithm to reconstruct phase and complex amplitude of structures on EUV lithography masks. Many native defects commonly found on EUV reticles are difficult to detect and review accurately because they have a strong phase component. Understanding the complex amplitude of mask features is essential for predictive modeling of defect printability and defect repair. Besides printing in a stepper, the most accurate way to characterize such defects is with actinic inspection, performed at the design, EUV wavelength. Phase defect and phase structures show a distinct through-focus behavior that enables qualitative evaluation of themore » object phase from two or more high-resolution intensity measurements. For the first time, phase of structures and defects on EUV masks were quantitatively reconstructed based on aerial image measurements, using a modified version of a phase-retrieval algorithm developed to test optical phase shifting reticles.« less

Fabless company mask technology approach: fabless but not fab-careless

NASA Astrophysics Data System (ADS)

Hisamura, Toshiyuki; Wu, Xin

2009-10-01

There are two different foundry-fabless working models in the aspect of mask. Some foundries have in-house mask facility while others contract with merchant mask vendors. Significant progress has been made in both kinds of situations. Xilinx as one of the pioneers of fabless semiconductor companies has been continually working very closely with both merchant mask vendors and mask facilities of foundries in past many years, contributed well in both technology development and benefited from corporations. Our involvement in manufacturing is driven by the following three elements: The first element is to understand the new fabrication and mask technologies and then find a suitable design / layout style to better utilize these new technologies and avoid potential risks. Because Xilinx has always been involved in early stage of advanced technology nodes, this early understanding and adoption is especially important. The second element is time to market. Reduction in mask and wafer manufacturing cycle-time can ensure faster time to market. The third element is quality. Commitment to quality is our highest priority for our customers. We have enough visibility on any manufacturing issues affecting the device functionality. Good correlation has consistently been observed between FPGA speed uniformity and the poly mask Critical Dimension (CD) uniformity performance. To achieve FPGA speed uniformity requirement, the manufacturing process as well as the mask and wafer CD uniformity has to be monitored. Xilinx works closely with the wafer foundries and mask suppliers to improve productivity and the yield from initial development stage of mask making operations. As an example, defect density reduction is one of the biggest challenges for mask supplier in development stage to meet the yield target satisfying the mask cost and mask turn-around-time (TAT) requirement. Historically, masks were considered to be defect free but at these advanced process nodes, that assumption no longer holds true. There is a need to be flexible enough on unrepairable defect at early stage but also a need for efficient risk management system on mask defect waivers. Mask defects are often waived in low design criticality area in favor of scrapping the mask and delaying the mask and wafer schedule. Xilinx's involvement in mask manufacturing has contributed significantly to our success in past many nodes and will continue.

Lithography-based automation in the design of program defect masks

NASA Astrophysics Data System (ADS)

Vakanas, George P.; Munir, Saghir; Tejnil, Edita; Bald, Daniel J.; Nagpal, Rajesh

2004-05-01

In this work, we are reporting on a lithography-based methodology and automation in the design of Program Defect masks (PDM"s). Leading edge technology masks have ever-shrinking primary features and more pronounced model-based secondary features such as optical proximity corrections (OPC), sub-resolution assist features (SRAF"s) and phase-shifted mask (PSM) structures. In order to define defect disposition specifications for critical layers of a technology node, experience alone in deciding worst-case scenarios for the placement of program defects is necessary but may not be sufficient. MEEF calculations initiated from layout pattern data and their integration in a PDM layout flow provide a natural approach for improvements, relevance and accuracy in the placement of programmed defects. This methodology provides closed-loop feedback between layout and hard defect disposition specifications, thereby minimizing engineering test restarts, improving quality and reducing cost of high-end masks. Apart from SEMI and industry standards, best-known methods (BKM"s) in integrated lithographically-based layout methodologies and automation specific to PDM"s are scarce. The contribution of this paper lies in the implementation of Design-For-Test (DFT) principles to a synergistic interaction of CAD Layout and Aerial Image Simulator to drive layout improvements, highlight layout-to-fracture interactions and output accurate program defect placement coordinates to be used by tools in the mask shop.

Irradiation resistance of intravolume shading elements embedded in photomasks used for CD uniformity control by local intra-field transmission attenuation

NASA Astrophysics Data System (ADS)

Zait, Eitan; Ben-Zvi, Guy; Dmitriev, Vladimir; Oshemkov, Sergey; Pforr, Rainer; Hennig, Mario

2006-05-01

Intra-field CD variation is, besides OPC errors, a main contributor to the total CD variation budget in IC manufacturing. It is caused mainly by mask CD errors. In advanced memory device manufacturing the minimum features are close to the resolution limit resulting in large mask error enhancement factors hence large intra-field CD variations. Consequently tight CD Control (CDC) of the mask features is required, which results in increasing significantly the cost of mask and hence the litho process costs. Alternatively there is a search for such techniques (1) which will allow improving the intrafield CD control for a given moderate mask and scanner imaging performance. Currently a new technique (2) has been proposed which is based on correcting the printed CD by applying shading elements generated in the substrate bulk of the mask by ultrashort pulsed laser exposure. The blank transmittance across a feature is controlled by changing the density of light scattering pixels. The technique has been demonstrated to be very successful in correcting intra-field CD variations caused by the mask and the projection system (2). A key application criterion of this technique in device manufacturing is the stability of the absorbing pixels against DUV light irradiation being applied during mask projection in scanners. This paper describes the procedures and results of such an investigation. To do it with acceptable effort a special experimental setup has been chosen allowing an evaluation within reasonable time. A 193nm excimer laser with pulse duration of 25 ns has been used for blank irradiation. Accumulated dose equivalent to 100,000 300 mm wafer exposures has been applied to Half Tone PSM mask areas with and without CDC shadowing elements. This allows the discrimination of effects appearing in treated and untreated glass regions. Several intensities have been investigated to define an acceptable threshold intensity to avoid glass compaction or generation of color centers in the glass. The impact of the irradiation on the mask transmittance of both areas has been studied by measurements of the printed CD on wafer using a wafer scanner before and after DUV irradiation.

Aerial image measurement technique for automated reticle defect disposition (ARDD) in wafer fabs

NASA Astrophysics Data System (ADS)

Zibold, Axel M.; Schmid, Rainer M.; Stegemann, B.; Scheruebl, Thomas; Harnisch, Wolfgang; Kobiyama, Yuji

2004-08-01

The Aerial Image Measurement System (AIMS)* for 193 nm lithography emulation has been brought into operation successfully worldwide. A second generation system comprising 193 nm AIMS capability, mini-environment and SMIF, the AIMS fab 193 plus is currently introduced into the market. By adjustment of numerical aperture (NA), illumination type and partial illumination coherence to match the conditions in 193 nm steppers or scanners, it can emulate the exposure tool for any type of reticles like binary, OPC and PSM down to the 65 nm node. The system allows a rapid prediction of wafer printability of defects or defect repairs, and critical features, like dense patterns or contacts on the masks without the need to perform expensive image qualification consisting of test wafer exposures followed by SEM measurements. Therefore, AIMS is a mask quality verification standard for high-end photo masks and established in mask shops worldwide. The progress on the AIMS technology described in this paper will highlight that besides mask shops there will be a very beneficial use of the AIMS in the wafer fab and we propose an Automated Reticle Defect Disposition (ARDD) process. With smaller nodes, where design rules are 65 nm or less, it is expected that smaller defects on reticles will occur in increasing numbers in the wafer fab. These smaller mask defects will matter more and more and become a serious yield limiting factor. With increasing mask prices and increasing number of defects and severability on reticles it will become cost beneficial to perform defect disposition on the reticles in wafer production. Currently ongoing studies demonstrate AIMS benefits for wafer fab applications. An outlook will be given for extension of 193 nm aerial imaging down to the 45 nm node based on emulation of immersion scanners.

Fabrication High Resolution Metrology Target By Step And Repeat Method

NASA Astrophysics Data System (ADS)

Dusa, Mircea

1983-10-01

Based on the photolithography process generally used to generate high resolution masks for semiconductor I.C.S, we found a very useful industrial application of laser technology.First, we have generated high resolution metrology targets which are used in industrial measurement laser interferometers as difra.ction gratings. Secondi we have generated these targets using step and repeat machine, with He-Ne laser interferometer controlled state, as a pattern generator, due to suitable computer programming.Actually, high resolution metrology target, means two chromium plates, one of which is called the" rule" the other one the "vernier". In Fig.1 we have the configuration of the rule and the vernier. The rule has a succesion of 3 μM lines generated as a difraction grating on a 4 x 4 inch chromium blank. The vernier has several exposed fields( areas) having 3 - 15 μm lines, fields placed on very precise position on the chromium blank surface. High degree of uniformity, tight CD tolerances, low defect density required by the targets, creates specialised problems during processing. Details of the processing, together with experimental results will be presented. Before we start to enter into process details, we have to point out that the dimensional requirements of the reticle target, are quite similar or perhaps more strict than LSI master casks. These requirements presented in Fig.2.

Massively-parallel FDTD simulations to address mask electromagnetic effects in hyper-NA immersion lithography

NASA Astrophysics Data System (ADS)

Tirapu Azpiroz, Jaione; Burr, Geoffrey W.; Rosenbluth, Alan E.; Hibbs, Michael

2008-03-01

In the Hyper-NA immersion lithography regime, the electromagnetic response of the reticle is known to deviate in a complicated manner from the idealized Thin-Mask-like behavior. Already, this is driving certain RET choices, such as the use of polarized illumination and the customization of reticle film stacks. Unfortunately, full 3-D electromagnetic mask simulations are computationally intensive. And while OPC-compatible mask electromagnetic field (EMF) models can offer a reasonable tradeoff between speed and accuracy for full-chip OPC applications, full understanding of these complex physical effects demands higher accuracy. Our paper describes recent advances in leveraging High Performance Computing as a critical step towards lithographic modeling of the full manufacturing process. In this paper, highly accurate full 3-D electromagnetic simulation of very large mask layouts are conducted in parallel with reasonable turnaround time, using a Blue- Gene/L supercomputer and a Finite-Difference Time-Domain (FDTD) code developed internally within IBM. A 3-D simulation of a large 2-D layout spanning 5μm×5μm at the wafer plane (and thus (20μm×20μm×0.5μm at the mask) results in a simulation with roughly 12.5GB of memory (grid size of 10nm at the mask, single-precision computation, about 30 bytes/grid point). FDTD is flexible and easily parallelizable to enable full simulations of such large layout in approximately an hour using one BlueGene/L "midplane" containing 512 dual-processor nodes with 256MB of memory per processor. Our scaling studies on BlueGene/L demonstrate that simulations up to 100μm × 100μm at the mask can be computed in a few hours. Finally, we will show that the use of a subcell technique permits accurate simulation of features smaller than the grid discretization, thus improving on the tradeoff between computational complexity and simulation accuracy. We demonstrate the correlation of the real and quadrature components that comprise the Boundary Layer representation of the EMF behavior of a mask blank to intensity measurements of the mask diffraction patterns by an Aerial Image Measurement System (AIMS) with polarized illumination. We also discuss how this model can become a powerful tool for the assessment of the impact to the lithographic process of a mask blank.

Patterned mask inspection technology with Projection Electron Microscope (PEM) technique for 11 nm half-pitch (hp) generation EUV masks

NASA Astrophysics Data System (ADS)

Hirano, Ryoichi; Iida, Susumu; Amano, Tsuyoshi; Watanabe, Hidehiro; Hatakeyama, Masahiro; Murakami, Takeshi; Yoshikawa, Shoji; Suematsu, Kenichi; Terao, Kenji

2015-07-01

High-sensitivity EUV mask pattern defect detection is one of the major issues in order to realize the device fabrication by using the EUV lithography. We have already designed a novel Projection Electron Microscope (PEM) optics that has been integrated into a new inspection system named EBEYE-V30 ("Model EBEYE" is an EBARA's model code), and which seems to be quite promising for 16 nm hp generation EUVL Patterned mask Inspection (PI). Defect inspection sensitivity was evaluated by capturing an electron image generated at the mask by focusing onto an image sensor. The progress of the novel PEM optics performance is not only about making an image sensor with higher resolution but also about doing a better image processing to enhance the defect signal. In this paper, we describe the experimental results of EUV patterned mask inspection using the above-mentioned system. The performance of the system is measured in terms of defect detectability for 11 nm hp generation EUV mask. To improve the inspection throughput for 11 nm hp generation defect detection, it would require a data processing rate of greater than 1.5 Giga- Pixel-Per-Second (GPPS) that would realize less than eight hours of inspection time including the step-and-scan motion associated with the process. The aims of the development program are to attain a higher throughput, and enhance the defect detection sensitivity by using an adequate pixel size with sophisticated image processing resulting in a higher processing rate.

Defect tolerant transmission lithography mask

DOEpatents

Vernon, Stephen P.

2000-01-01

A transmission lithography mask that utilizes a transparent substrate or a partially transparent membrane as the active region of the mask. A reflective single layer or multilayer coating is deposited on the membrane surface facing the illumination system. The coating is selectively patterned (removed) to form transmissive (bright) regions. Structural imperfections and defects in the coating have negligible effect on the aerial image of the mask master pattern since the coating is used to reflect radiation out of the entrance pupil of the imaging system. Similarly, structural imperfections in the clear regions of the membrane have little influence on the amplitude or phase of the transmitted electromagnetic fields. Since the mask "discards," rather than absorbs, unwanted radiation, it has reduced optical absorption and reduced thermal loading as compared to conventional designs. For EUV applications, the mask circumvents the phase defect problem, and is independent of the thermal load during exposure.

Defect reduction of high-density full-field patterns in jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Singh, Lovejeet; Luo, Kang; Ye, Zhengmao; Xu, Frank; Haase, Gaddi; Curran, David; LaBrake, Dwayne; Resnick, Douglas; Sreenivasan, S. V.

2011-04-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash Imprint Lithography (J-FIL) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed leaving a patterned resist on the substrate. Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the defect specifications of high end memory devices. Typical defectivity targets are on the order of 0.10/cm2. This work summarizes the results of defect inspections focusing on two key defect types; random non-fill defects occurring during the resist filling process and repeater defects caused by interactions with particles on the substrate. Non-fill defectivity must always be considered within the context of process throughput. The key limiting throughput step in an imprint process is resist filling time. As a result, it is critical to characterize the filling process by measuring non-fill defectivity as a function of fill time. Repeater defects typically have two main sources; mask defects and particle related defects. Previous studies have indicated that soft particles tend to cause non-repeating defects. Hard particles, on the other hand, can cause either resist plugging or mask damage. In this work, an Imprio 500 twenty wafer per hour (wph) development tool was used to study both defect types. By carefully controlling the volume of inkjetted resist, optimizing the drop pattern and controlling the resist fluid front during spreading, fill times of 1.5 seconds were achieved with non-fill defect levels of approximately 1.2/cm2. Longevity runs were used to study repeater defects and a nickel contamination was identified as the key source of particle induced repeater defects.

Reticle decision center: a novel applications platform for enhancing reticle yield and productivity at 10nm technology and beyond

NASA Astrophysics Data System (ADS)

Hwa, George; Bugata, Raj; Chiang, Kaiming; Lakkapragada, Suresh; Tolani, Vikram; Gopalakrishnan, Sandhya; Chen, Chun-Jen; Yang, Chin-Ting; Hsu, Sheng-Chang; Tuo, Laurent

2016-10-01

In the semiconductor IC manufacturing industry, challenges associated with producing defect-free photomasks have been dramatically increasing. At the 10nm technology node, since the 193nm immersion scanner numerical aperture has remained the same 1.35 as in previous nodes, more multi-patterning and aggressive SMO illumination sources are being used to effectively print smaller feature CDs and pitches. To accommodate such specialized sources, more model-based mask OPC and ILT have been used making mask designs very complicated. This in turn makes mask manufacturing very challenging especially for the defect inspection, repair, and metrology processes that need to guarantee defect-free masks. Over the past few years, considerable innovation have been made in the areas of defect inspection and disposition that has ensured continued predictability of mask quality to wafer and final chip yields. The accurate disposition of each mask defect before and after repair has been facilitated by a suite of automated applications such as ADC, LPR, RPG, AIA, etc. that work together with the inspection, repair, and metrology tools and effectively also provide the best possible utilization of the tool capability, capacity and operator resources. In this paper we introduce a new consolidated applications platform called the Reticle Decision Center (RDC) which hosts all these supporting software applications on a centralized server with direct connectivity to mask inspection, repair, metrology tools and more. The paper details how the RDC server is architected to host any application in its native operating system environment and provides for high availability with automatic failover and redundancy. The server along with its host of applications has been tightly integrated with KLA-Tencor's Teron mask inspectors. The paper concludes with showing benefits realized in mask cycle-time and yield as a result of implementing RDC into a high-volume 10nm mask-shop production line.

Defect reduction for semiconductor memory applications using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Ye, Zhengmao; Luo, Kang; Irving, J. W.; Lu, Xiaoming; Zhang, Wei; Fletcher, Brian; Liu, Weijun; Xu, Frank; LaBrake, Dwayne; Resnick, Douglas; Sreenivasan, S. V.

2013-03-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash Imprint Lithography (J-FIL) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed leaving a patterned resist on the substrate. Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the defect specifications of high end memory devices. Typical defectivity targets are on the order of 0.10/cm2. In previous studies, we have focused on defects such as random non-fill defects occurring during the resist filling process and repeater defects caused by interactions with particles on the substrate. In this work, we attempted to identify the critical imprint defect types using a mask with NAND Flash-like patterns at dimensions as small as 26nm. The two key defect types identified were line break defects induced by small particulates and airborne contaminants which result in local adhesion failure. After identification, the root cause of the defect was determined, and corrective measures were taken to either eliminate or reduce the defect source. As a result, we have been able to reduce defectivity levels by more than three orders of magnitude in only 12 months and are now achieving defectivity adders as small as 2 adders per lot of wafers.

Detecting Submicron Pattern Defects On Optical Photomasks Using An Enhanced El-3 Electron-Beam Lithography Tool

NASA Astrophysics Data System (ADS)

Simpson, R. A.; Davis, D. E.

1982-09-01

This paper describes techniques to detect submicron pattern defects on optical photomasks with an enhanced direct-write, electron-beam lithographic tool. EL-3 is a third generation, shaped spot, electron-beam lithography tool developed by IBM to fabricate semiconductor devices and masks. This tool is being upgraded to provide 100% inspection of optical photomasks for submicron pattern defects, which are subsequently repaired. Fixed-size overlapped spots are stepped over the mask patterns while a signal derived from the back-scattered electrons is monitored to detect pattern defects. Inspection does not require pattern recognition because the inspection scan patterns are derived from the original design data. The inspection spot is square and larger than the minimum defect to be detected, to improve throughput. A new registration technique provides the beam-to-pattern overlay required to locate submicron defects. The 'guard banding" of inspection shapes prevents mask and system tolerances from producing false alarms that would occur should the spots be mispositioned such that they only partially covered a shape being inspected. A rescanning technique eliminates noise-related false alarms and significantly improves throughput. Data is accumulated during inspection and processed offline, as required for defect repair. EL-3 will detect 0.5 um pattern defects at throughputs compatible with mask manufacturing.

The future of 2D metrology for display manufacturing

NASA Astrophysics Data System (ADS)

Sandstrom, Tor; Wahlsten, Mikael; Park, Youngjin

2016-10-01

The race to 800 PPI and higher in mobile devices and the transition to OLED displays are driving a dramatic development of mask quality: resolution, CDU, registration, and complexity. 2D metrology for large area masks is necessary and must follow the roadmap. Driving forces in the market place point to continued development of even more dense displays. State-of-the-art metrology has proven itself capable of overlay below 40 nm and registration below 65 nm for G6 masks. Future developments include incoming and recurrent measurements of pellicalized masks at the panel maker's factory site. Standardization of coordinate systems across supplier networks is feasible. This will enable better yield and production economy for both mask and panel maker. Better distortion correction methods will give better registration on the panels and relax the flatness requirements of the mask blanks. If panels are measured together with masks and the results are used to characterize the aligners, further quality and yield improvements are possible. Possible future developments include in-cell metrology and integration with other instruments in the same platform.

Optimizing defect inspection strategy through the use of design-aware database control layers

NASA Astrophysics Data System (ADS)

Stoler, Dvori; Ruch, Wayne; Ma, Weimin; Chakravarty, Swapnajit; Liu, Steven; Morgan, Ray; Valadez, John; Moore, Bill; Burns, John

2007-10-01

Resolution limitations in the mask making process can cause differences between the features that appear in a database and those printed to a reticle. These differences may result from intentional or unintentional features in the database exceeding the resolution limit of the mask making process such as small gaps or lines in the data, line end shortening on small sub-resolution assist features etc creating challenges to both mask writing and mask inspection. Areas with high variance from design to mask, often referred to as high MEEF areas (mask error enhancement factor), become highly problematic and can directly impact mask and device yield, mask manufacturing cycle time and ultimately mask costs. Specific to mask inspection it may be desirable to inspect certain non-critical or non-relevant features at reduced sensitivity so as not to detect real, but less significant process defects. In contrast there may also be times where increased sensitivity is required for critical mask features or areas. Until recently, this process was extremely manual, creating added time and cost to the mask inspection cycle. Shifting to more intelligent and automated inspection flows is the key focus of this paper. A novel approach to importing design data directly into the mask inspection to include both MDP generated MRC errors files and LRC generated MEEF files. The results of recently developed inspection and review capability based upon controlling defect inspection using design aware data base control layers on a pixel basis are discussed. Typical mask shop applications and implementations will be shown.

Coatings on reflective mask substrates

DOEpatents

Tong, William Man-Wai; Taylor, John S.; Hector, Scott D.; Mangat, Pawitter J. S.; Stivers, Alan R.; Kofron, Patrick G.; Thompson, Matthew A.

2002-01-01

A process for creating a mask substrate involving depositing: 1) a coating on one or both sides of a low thermal expansion material EUVL mask substrate to improve defect inspection, surface finishing, and defect levels; and 2) a high dielectric coating, on the backside to facilitate electrostatic chucking and to correct for any bowing caused by the stress imbalance imparted by either other deposited coatings or the multilayer coating of the mask substrate. An film, such as TaSi, may be deposited on the front side and/or back of the low thermal expansion material before the material coating to balance the stress. The low thermal expansion material with a silicon overlayer and a silicon and/or other conductive underlayer enables improved defect inspection and stress balancing.

Performance of repaired defects and attPSM in EUV multilayer masks

NASA Astrophysics Data System (ADS)

Deng, Yunfei; La Fontaine, Bruno; Neureuther, Andrew R.

2002-12-01

The imaging performance of non-planar topographies in EUV masks for both partially repaired defects and non-planar attenuating phase-shifting masks made with repair treatments are evaluated using rigorous electromagnetic simulation with TEMPEST. Typical topographies produced by treatment techniques in the literature such as removal of top layers and compaction produced by electron-beam heating are considered. Isolated defects on/near the surface repaired by material removal are shown to result in an image intensity within 5% of the clear field value. Deeply buried defects within the multilayer treated by electron-beam heating can be repaired to 3% of the clear field but over repair can result in some degradation. Compaction from a 6.938 nm period to a 6.312 nm period shows a 540° phase-shift and an intensity reduced to about 6% suggesting such a treatment may be used to create attenuated phase-shifting masks for EUV. The quality of the aerial image for such a mask is studied as a function of the lateral transition distance between treated and untreated regions.

Extreme ultraviolet patterned mask inspection performance of advanced projection electron microscope system for 11nm half-pitch generation

NASA Astrophysics Data System (ADS)

Hirano, Ryoichi; Iida, Susumu; Amano, Tsuyoshi; Watanabe, Hidehiro; Hatakeyama, Masahiro; Murakami, Takeshi; Suematsu, Kenichi; Terao, Kenji

2016-03-01

Novel projection electron microscope optics have been developed and integrated into a new inspection system named EBEYE-V30 ("Model EBEYE" is an EBARA's model code) , and the resulting system shows promise for application to half-pitch (hp) 16-nm node extreme ultraviolet lithography (EUVL) patterned mask inspection. To improve the system's inspection throughput for 11-nm hp generation defect detection, a new electron-sensitive area image sensor with a high-speed data processing unit, a bright and stable electron source, and an image capture area deflector that operates simultaneously with the mask scanning motion have been developed. A learning system has been used for the mask inspection tool to meet the requirements of hp 11-nm node EUV patterned mask inspection. Defects are identified by the projection electron microscope system using the "defectivity" from the characteristics of the acquired image. The learning system has been developed to reduce the labor and costs associated with adjustment of the detection capability to cope with newly-defined mask defects. We describe the integration of the developed elements into the inspection tool and the verification of the designed specification. We have also verified the effectiveness of the learning system, which shows enhanced detection capability for the hp 11-nm node.

Phase measurements of EUV mask defects

DOE PAGES

Claus, Rene A.; Wang, Yow-Gwo; Wojdyla, Antoine; ...

2015-02-22

Extreme Ultraviolet (EUV) Lithography mask defects were examined on the actinic mask imaging system, SHARP, at Lawrence Berkeley National Laboratory. Also, a quantitative phase retrieval algorithm based on the Weak Object Transfer Function was applied to the measured through-focus aerial images to examine the amplitude and phase of the defects. The accuracy of the algorithm was demonstrated by comparing the results of measurements using a phase contrast zone plate and a standard zone plate. Using partially coherent illumination to measure frequencies that would otherwise fall outside the numerical aperture (NA), it was shown that some defects are smaller than themore » conventional resolution of the microscope. We found that the programmed defects of various sizes were measured and shown to have both an amplitude and a phase component that the algorithm is able to recover.« less

Defect inspection and printability study for 14 nm node and beyond photomask

NASA Astrophysics Data System (ADS)

Seki, Kazunori; Yonetani, Masashi; Badger, Karen; Dechene, Dan J.; Akima, Shinji

2016-10-01

Two different mask inspection techniques are developed and compared for 14 nm node and beyond photomasks, High resolution and Litho-based inspection. High resolution inspection is the general inspection method in which a 19x nm wavelength laser is used with the High NA inspection optics. Litho-based inspection is a new inspection technology. This inspection uses the wafer lithography information, and as such, this method has automatic defect classification capability which is based on wafer printability. Both High resolution and Litho-based inspection methods are compared using 14 nm and 7 nm node programmed defect and production design masks. The defect sensitivity and mask inspectability is compared, in addition to comparing the defect classification and throughput. Additionally, the Cost / Infrastructure comparison is analyzed and the impact of each inspection method is discussed.

Actinic inspection of EUV reticles with arbitrary pattern design

NASA Astrophysics Data System (ADS)

Mochi, Iacopo; Helfenstein, Patrick; Rajeev, Rajendran; Fernandez, Sara; Kazazis, Dimitrios; Yoshitake, Shusuke; Ekinci, Yasin

2017-10-01

The re ective-mode EUV mask scanning lensless imaging microscope (RESCAN) is being developed to provide actinic mask inspection capabilities for defects and patterns with high resolution and high throughput, for 7 nm node and beyond. Here we, will report on our progress and present the results on programmed defect detection on random, logic-like patterns. The defects we investigated range from 200 nm to 50 nm size on the mask. We demonstrated the ability of RESCAN to detect these defects in die-to-die and die-to-database mode with a high signal to noise ratio. We also describe future plans for the upgrades to increase the resolution, the sensitivity, and the inspection speed of the demo tool.

Vitreous carbon mask substrate for X-ray lithography

DOEpatents

Aigeldinger, Georg [Livermore, CA; Skala, Dawn M [Fremont, CA; Griffiths, Stewart K [Livermore, CA; Talin, Albert Alec [Livermore, CA; Losey, Matthew W [Livermore, CA; Yang, Chu-Yeu Peter [Dublin, CA

2009-10-27

The present invention is directed to the use of vitreous carbon as a substrate material for providing masks for X-ray lithography. The new substrate also enables a small thickness of the mask absorber used to pattern the resist, and this enables improved mask accuracy. An alternative embodiment comprised the use of vitreous carbon as a LIGA substrate wherein the VC wafer blank is etched in a reactive ion plasma after which an X-ray resist is bonded. This surface treatment provides a surface enabling good adhesion of the X-ray photoresist and subsequent nucleation and adhesion of the electrodeposited metal for LIGA mold-making while the VC substrate practically eliminates secondary radiation effects that lead to delamination of the X-ray resist form the substrate, the loss of isolated resist features, and the formation of a resist layer adjacent to the substrate that is insoluble in the developer.

Advanced EUV mask and imaging modeling

NASA Astrophysics Data System (ADS)

Evanschitzky, Peter; Erdmann, Andreas

2017-10-01

The exploration and optimization of image formation in partially coherent EUV projection systems with complex source shapes requires flexible, accurate, and efficient simulation models. This paper reviews advanced mask diffraction and imaging models for the highly accurate and fast simulation of EUV lithography systems, addressing important aspects of the current technical developments. The simulation of light diffraction from the mask employs an extended rigorous coupled wave analysis (RCWA) approach, which is optimized for EUV applications. In order to be able to deal with current EUV simulation requirements, several additional models are included in the extended RCWA approach: a field decomposition and a field stitching technique enable the simulation of larger complex structured mask areas. An EUV multilayer defect model including a database approach makes the fast and fully rigorous defect simulation and defect repair simulation possible. A hybrid mask simulation approach combining real and ideal mask parts allows the detailed investigation of the origin of different mask 3-D effects. The image computation is done with a fully vectorial Abbe-based approach. Arbitrary illumination and polarization schemes and adapted rigorous mask simulations guarantee a high accuracy. A fully vectorial sampling-free description of the pupil with Zernikes and Jones pupils and an optimized representation of the diffraction spectrum enable the computation of high-resolution images with high accuracy and short simulation times. A new pellicle model supports the simulation of arbitrary membrane stacks, pellicle distortions, and particles/defects on top of the pellicle. Finally, an extension for highly accurate anamorphic imaging simulations is included. The application of the models is demonstrated by typical use cases.

Submillisecond unmasked subliminal visual stimuli evoke electrical brain responses.

PubMed

Sperdin, Holger F; Spierer, Lucas; Becker, Robert; Michel, Christoph M; Landis, Theodor

2015-04-01

Subliminal perception is strongly associated to the processing of meaningful or emotional information and has mostly been studied using visual masking. In this study, we used high density 256-channel EEG coupled with an liquid crystal display (LCD) tachistoscope to characterize the spatio-temporal dynamics of the brain response to visual checkerboard stimuli (Experiment 1) or blank stimuli (Experiment 2) presented without a mask for 1 ms (visible), 500 µs (partially visible), and 250 µs (subliminal) by applying time-wise, assumption-free nonparametric randomization statistics on the strength and on the topography of high-density scalp-recorded electric field. Stimulus visibility was assessed in a third separate behavioral experiment. Results revealed that unmasked checkerboards presented subliminally for 250 µs evoked weak but detectable visual evoked potential (VEP) responses. When the checkerboards were replaced by blank stimuli, there was no evidence for the presence of an evoked response anymore. Furthermore, the checkerboard VEPs were modulated topographically between 243 and 296 ms post-stimulus onset as a function of stimulus duration, indicative of the engagement of distinct configuration of active brain networks. A distributed electrical source analysis localized this modulation within the right superior parietal lobule near the precuneus. These results show the presence of a brain response to submillisecond unmasked subliminal visual stimuli independently of their emotional saliency or meaningfulness and opens an avenue for new investigations of subliminal stimulation without using visual masking. © 2014 Wiley Periodicals, Inc.

Electron-beam Induced Processes and their Applicability to Mask Repair

NASA Astrophysics Data System (ADS)

Boegli, Volker A.; Koops, Hans W. P.; Budach, Michael; Edinger, Klaus; Hoinkis, Ottmar; Weyrauch, Bernd; Becker, Rainer; Schmidt, Rudolf; Kaya, Alexander; Reinhardt, Andreas; Braeuer, Stephan; Honold, Heinz; Bihr, Johannes; Greiser, Jens; Eisenmann, Michael

2002-12-01

The applicability of electron-beam induced chemical reactions to mask repair is investigated. To achieve deposition and chemical etching with a focused electron-beam system, it is required to disperse chemicals in a molecular beam to the area of interest with a well-defined amount of molecules and monolayers per second. For repair of opaque defects the precursor gas reacts with the absorber material of the mask and forms a volatile reaction product, which leaves the surface. In this way the surface atoms are removed layer by layer. For clear defect repair, additional material, which is light absorbing in the UV, is deposited onto the defect area. This material is rendered as a nanocrystalline deposit from metal containing precursors. An experimental electron-beam mask repair system is developed and used to perform exploratory work applicable to photo mask, EUV mask, EPL and LEEPL stencil mask repair. The tool is described and specific repair actions are demonstrated. Platinum deposited features with lateral dimensions down to 20 nm demonstrate the high resolution obtainable with electron beam induced processes, while AFM and AIMS measurements indicate, that specifications for mask repair at the 70 nm device node can be met. In addition, examples of etching quartz and TaN are given.

Repair of localized defects in multilayer-coated reticle blanks for extreme ultraviolet lithography

DOEpatents

Stearns, Daniel G [Los Altos, CA; Sweeney, Donald W [San Ramon, CA; Mirkarimi, Paul B [Sunol, CA

2004-11-23

A method is provided for repairing defects in a multilayer coating layered onto a reticle blank used in an extreme ultraviolet lithography (EUVL) system. Using high lateral spatial resolution, energy is deposited in the multilayer coating in the vicinity of the defect. This can be accomplished using a focused electron beam, focused ion beam or a focused electromagnetic radiation. The absorbed energy will cause a structural modification of the film, producing a localized change in the film thickness. The change in film thickness can be controlled with sub-nanometer accuracy by adjusting the energy dose. The lateral spatial resolution of the thickness modification is controlled by the localization of the energy deposition. The film thickness is adjusted locally to correct the perturbation of the reflected field. For example, when the structural modification is a localized film contraction, the repair of a defect consists of flattening a mound or spreading out the sides of a depression.

The capability of lithography simulation based on MVM-SEM® system

NASA Astrophysics Data System (ADS)

Yoshikawa, Shingo; Fujii, Nobuaki; Kanno, Koichi; Imai, Hidemichi; Hayano, Katsuya; Miyashita, Hiroyuki; Shida, Soichi; Murakawa, Tsutomu; Kuribara, Masayuki; Matsumoto, Jun; Nakamura, Takayuki; Matsushita, Shohei; Hara, Daisuke; Pang, Linyong

2015-10-01

The 1Xnm technology node lithography is using SMO-ILT, NTD or more complex pattern. Therefore in mask defect inspection, defect verification becomes more difficult because many nuisance defects are detected in aggressive mask feature. One key Technology of mask manufacture is defect verification to use aerial image simulator or other printability simulation. AIMS™ Technology is excellent correlation for the wafer and standards tool for defect verification however it is difficult for verification over hundred numbers or more. We reported capability of defect verification based on lithography simulation with a SEM system that architecture and software is excellent correlation for simple line and space.[1] In this paper, we use a SEM system for the next generation combined with a lithography simulation tool for SMO-ILT, NTD and other complex pattern lithography. Furthermore we will use three dimension (3D) lithography simulation based on Multi Vision Metrology SEM system. Finally, we will confirm the performance of the 2D and 3D lithography simulation based on SEM system for a photomask verification.

Defining defect specifications to optimize photomask production and requalification

NASA Astrophysics Data System (ADS)

Fiekowsky, Peter

2006-10-01

Reducing defect repairs and accelerating defect analysis is becoming more important as the total cost of defect repairs on advanced masks increases. Photomask defect specs based on printability, as measured on AIMS microscopes has been used for years, but the fundamental defect spec is still the defect size, as measured on the photomask, requiring the repair of many unprintable defects. ADAS, the Automated Defect Analysis System from AVI is now available in most advanced mask shops. It makes the use of pure printability specs, or "Optimal Defect Specs" practical. This software uses advanced algorithms to eliminate false defects caused by approximations in the inspection algorithm, classify each defect, simulate each defect and disposition each defect based on its printability and location. This paper defines "optimal defect specs", explains why they are now practical and economic, gives a method of determining them and provides accuracy data.

Low surface energy polymeric release coating for improved contact print lithography

NASA Astrophysics Data System (ADS)

Mancini, David P.; Resnick, Douglas J.; Gehoski, Kathleen A.; Popovich, Laura L.; Chang, Daniel

2002-03-01

Contact printing has been used for decades in many various lithography applications in the microelectronic industry. While vacuum contact printing processes offer sub-micron resolution and high throughput, they often suffer from some important drawbacks. One of the most common problems is degradation in both resolution and defect density which occurs when the same mask si used for multiple exposures without frequent mask cleans. This is largely due to the relatively high surface energy of both quartz and chrome and the tendency of most photoresists to adhere to these surfaces. As a result, when a mask and wafer are pressed into intimate contact, resist will tend to stick to the mask creating a defect on the wafer, effectively propagating defects to subsequent wafers. In this study, DuPont Teflon AF 1601S is used as a photomask coating and evaluated for its ability to act as a release agent and reduce defects while maintaining resolution for multiple exposures. Teflon AF is an amorphous, transparent, low surface energy, polymeric material that can be spin coated into a thin conformal film. Tests have shown that when using an uncoated mask in vacuum contact, resolution of 0.75 micrometers dense lines is severely degraded after less than 10 consecutive exposures. However, when the mask is coated, 0.75 micrometers dense lines were successfully resolved using vacuum contact for over 200 exposures without cleaning. In addition, it has been demonstrated that Teflon AF coatings impart to a mask a self-cleaning capability, since particles tend to stick to the photoresist rather than the mask. A coated mask, which was purposefully contaminated with particulates, resolved 0.75 micrometers dense lines on all but the first wafer of a series of 25 consecutive exposures. The patented mask releases layer process has successfully been demonstrated with a positive novolak resist. Additional data which describes the system chemistry, dilution and coating process, and film morphology are also presented.

Printability and inspectability of programmed pit defects on teh masks in EUV lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kang, I.-Y.; Seo, H.-S.; Ahn, B.-S.

2010-03-12

Printability and inspectability of phase defects in ELlVL mask originated from substrate pit were investigated. For this purpose, PDMs with programmed pits on substrate were fabricated using different ML sources from several suppliers. Simulations with 32-nm HP L/S show that substrate pits with below {approx}20 nm in depth would not be printed on the wafer if they could be smoothed by ML process down to {approx}1 nm in depth on ML surface. Through the investigation of inspectability for programmed pits, minimum pit sizes detected by KLA6xx, AIT, and M7360 depend on ML smoothing performance. Furthermore, printability results for pit defectsmore » also correlate with smoothed pit sizes. AIT results for pattemed mask with 32-nm HP L/S represents that minimum printable size of pits could be {approx}28.3 nm of SEVD. In addition, printability of pits became more printable as defocus moves to (-) directions. Consequently, printability of phase defects strongly depends on their locations with respect to those of absorber patterns. This indicates that defect compensation by pattern shift could be a key technique to realize zero printable phase defects in EUVL masks.« less

Optimal mask characterization by Surrogate Wafer Print (SWaP) method

NASA Astrophysics Data System (ADS)

Kimmel, Kurt R.; Hoellein, Ingo; Peters, Jan Hendrick; Ackmann, Paul; Connolly, Brid; West, Craig

2008-10-01

Traditionally, definition of mask specifications is done completely by the mask user, while characterization of the mask relative to the specifications is done completely by the mask maker. As the challenges of low-k1 imaging continue to grow in scope of designs and in absolute complexity, the inevitable partnership between wafer lithographers and mask makers has strengthened as well. This is reflected in the jointly owned mask facilities and device manufacturers' continued maintenance of fully captive mask shops which foster the closer mask-litho relationships. However, while some device manufacturers have leveraged this to optimize mask specifications before the mask is built and, therefore, improve mask yield and cost, the opportunity for post-fabrication partnering on mask characterization is more apparent and compelling. The Advanced Mask Technology Center (AMTC) has been investigating the concept of assessing how a mask images, rather than the mask's physical attributes, as a technically superior and lower-cost method to characterize a mask. The idea of printing a mask under its intended imaging conditions, then characterizing the imaged wafer as a surrogate for traditional mask inspections and measurements represents the ultimate method to characterize a mask's performance, which is most meaningful to the user. Surrogate wafer print (SWaP) is already done as part of leading-edge wafer fab mask qualification to validate defect and dimensional performance. In the past, the prospect of executing this concept has generally been summarily discarded as technically untenable and logistically intractable. The AMTC published a paper at BACUS 2007 successfully demonstrating the performance of SWaP for the characterization of defects as an alternative to traditional mask inspection [1]. It showed that this concept is not only feasible, but, in some cases, desirable. This paper expands on last year's work at AMTC to assess the full implementation of SWaP as an enhancement to mask characterization quality including defectivity, dimensional control, pattern fidelity, and in-plane distortion. We present a thorough analysis of both the technical and logistical challenges coupled with an objective view of the advantages and disadvantages from both the technical and financial perspectives. The analysis and model used by the AMTC will serve to provoke other mask shops to prepare their own analyses then consider this new paradigm for mask characterization and qualification.

High recall document content extraction

NASA Astrophysics Data System (ADS)

An, Chang; Baird, Henry S.

2011-01-01

We report methodologies for computing high-recall masks for document image content extraction, that is, the location and segmentation of regions containing handwriting, machine-printed text, photographs, blank space, etc. The resulting segmentation is pixel-accurate, which accommodates arbitrary zone shapes (not merely rectangles). We describe experiments showing that iterated classifiers can increase recall of all content types, with little loss of precision. We also introduce two methodological enhancements: (1) a multi-stage voting rule; and (2) a scoring policy that views blank pixels as a "don't care" class with other content classes. These enhancements improve both recall and precision, achieving at least 89% recall and at least 87% precision among three content types: machine-print, handwriting, and photo.

Advanced defect classification by smart sampling, based on sub-wavelength anisotropic scatterometry

NASA Astrophysics Data System (ADS)

van der Walle, Peter; Kramer, Esther; Ebeling, Rob; Spruit, Helma; Alkemade, Paul; Pereira, Silvania; van der Donck, Jacques; Maas, Diederik

2018-03-01

We report on advanced defect classification using TNO's RapidNano particle scanner. RapidNano was originally designed for defect detection on blank substrates. In detection-mode, the RapidNano signal from nine azimuth angles is added for sensitivity. In review-mode signals from individual angles are analyzed to derive additional defect properties. We define the Fourier coefficient parameter space that is useful to study the statistical variation in defect types on a sample. By selecting defects from each defect type for further review by SEM, information on all defects can be obtained efficiently.

The difficult business model for mask equipment makers and mask infrastructure development support from consortia and governments

NASA Astrophysics Data System (ADS)

Hector, Scott

2005-11-01

The extension of optical projection lithography through immersion to patterning features with half pitch <=65 nm is placing greater demands on the mask. Strong resolution enhancement techniques (RETs), such as embedded and alternating phase shift masks and complex model-based optical proximity correction, are required to compensate for diffraction and limited depth of focus (DOF). To fabricate these masks, many new or upgraded tools are required to write patterns, measure feature sizes and placement, inspect for defects, review defect printability and repair defects on these masks. Beyond the significant technical challenges, suppliers of mask fabrication equipment face the challenge of being profitable in the small market for mask equipment while encountering significant R&D expenses to bring new generations of mask fabrication equipment to market. The total available market for patterned masks is estimated to be $2.5B to $2.9B per year. The patterned mask market is about 20% of the market size for lithography equipment and materials. The total available market for mask-making equipment is estimated to be about $800M per year. The largest R&D affordability issue arises for the makers of equipment for fabricating masks where total available sales are typically less than ten units per year. SEMATECH has used discounted cash flow models to predict the affordable R&D while maintaining industry accepted internal rates of return. The results have been compared to estimates of the total R&D cost to bring a new generation of mask equipment to market for various types of tools. The analysis revealed that affordability of the required R&D is a significant problem for many suppliers of mask-making equipment. Consortia such as SEMATECH and Selete have played an important role in cost sharing selected mask equipment and material development projects. Governments in the United States, in Europe and in Japan have also helped equipment suppliers with support for R&D. This paper summarizes the challenging business model for mask equipment suppliers and highlight government support for mask equipment and materials development.

Extending CO2 cryogenic aerosol cleaning for advanced optical and EUV mask cleaning

NASA Astrophysics Data System (ADS)

Varghese, Ivin; Bowers, Charles W.; Balooch, Mehdi

2011-11-01

Cryogenic CO2 aerosol cleaning being a dry, chemically-inert and residue-free process is used in the production of optical lithography masks. It is an attractive cleaning option for the mask industry to achieve the requirement for removal of all printable soft defects and repair debris down to the 50nm printability specification. In the technique, CO2 clusters are formed by sudden expansion of liquid from high to almost atmospheric pressure through an optimally designed nozzle orifice. They are then directed on to the soft defects or debris for momentum transfer and subsequent damage free removal from the mask substrate. Unlike aggressive acid based wet cleaning, there is no degradation of the mask after processing with CO2, i.e., no critical dimension (CD) change, no transmission/phase losses, or chemical residue that leads to haze formation. Therefore no restriction on number of cleaning cycles is required to be imposed, unlike other cleaning methods. CO2 aerosol cleaning has been implemented for several years as full mask final clean in production environments at several state of the art mask shops. Over the last two years our group reported successful removal of all soft defects without damage to the fragile SRAF features, zero adders (from the cleaning and handling mechanisms) down to a 50nm printability specification. In addition, CO2 aerosol cleaning is being utilized to remove debris from Post-RAVE repair of hard defects in order to achieve the goal of no printable defects. It is expected that CO2 aerosol cleaning can be extended to extreme ultraviolet (EUV) masks. In this paper, we report advances being made in nozzle design qualification for optimum snow properties (size, velocity and flux) using Phase Doppler Anemometry (PDA) technique. In addition the two new areas of focus for CO2 aerosol cleaning i.e. pellicle glue residue removal on optical masks, and ruthenium (Ru) film on EUV masks are presented. Usually, the residue left over after the pellicle has been removed from returned masks (after long term usage/exposure in the wafer fab), requires a very aggressive SPM wet clean, that drastically reduces the available budget for mask properties (CD, phase/transmission). We show that CO2aerosol cleaning can be utilized to remove the bulk of the glue residue effectively, while preserving the mask properties. This application required a differently designed nozzle to impart the required removal force for the sticky glue residue. A new nozzle was developed and qualified that resulted in PRE in the range of 92-98%. Results also include data on a patterned mask that was exposed in a lithography stepper in a wafer production environment. On EUV mask, our group has experimentally demonstrated that 50 CO2 cleaning cycles of Ru film on the EUV Front-side resulted in no appreciable reflectivity change, implying that no degradation of the Ru film occurs.

Defect printability of ArF alternative phase-shift mask: a critical comparison of simulation and experiment

NASA Astrophysics Data System (ADS)

Ozawa, Ken; Komizo, Tooru; Ohnuma, Hidetoshi

2002-07-01

An alternative phase shift mask (alt-PSM) is a promising device for extending optical lithography to finer design rules. There have been few reports, however, on the mask's ability to identify phase defects. We report here an alt-PSM of a single-trench type with undercut for ArF exposure, with programmed phase defects used to evaluate defect printability by measuring aerial images with a Zeiss MSM193 measuring system. The experimental results are simulated using the TEMPEST program. First, a critical comparison of the simulation and the experiment is conducted. The actual measured topographies of quartz defects are used in the simulation. Moreover, a general simulation study on defect printability using an alt-PSM for ArF exposure is conducted. The defect dimensions, which produce critical CD errors, are determined by simulation that takes into account the full 3-dimensional structure of phase defects as well as a simplified structure. The critical dimensions of an isolated bump defect identified by the alt-PSM of a single-trench type with undercut for ArF exposure are 300 nm in bottom dimension and 74 degrees in height (phase) for the real shape, where the depth of wet-etching is 100 nm and the CD error limit is +/- 5 percent.

Defect printability of alternating phase-shift mask: a critical comparison of simulation and experiment

NASA Astrophysics Data System (ADS)

Ozawa, Ken; Komizo, Tooru; Kikuchi, Koji; Ohnuma, Hidetoshi; Kawahira, Hiroichi

2002-07-01

An alternative phase shift mask (alt-PSM) is a promising device for extending optical lithography to finer design rules. There have been few reports, however, on the mask's ability to identify phase defects. We report here an alt-PSM of a dual-trench type for KrF exposure, with programmed quartz defects used to evaluate defect printability by measuring aerial images with a Zeiss MSM100 measuring system. The experimental results are simulated using the TEMPEST program. First, a critical comparison of the simulation and the experiment is conducted. The actual measured topography of quartz defects are used in the simulation. Moreover, a general simulation study on defect printability using an alt-PSM for ArF exposure is conducted. The defect dimensions, which produce critical CD errors are determined by simulation that takes into account the full 3-dimensional structure of phase defects as well as a simplified structure. The critical dimensions of an isolated defect identified by the alt-PSM of a single-trench type for ArF exposure are 240 nm in bottom diameter and 50 degrees in height (phase) for the cylindrical shape and 240 nm in bottom diameter and 90 degrees in height (phase) for the rotating trapezoidal shape, where the CD error limit is +/- 5%.

SMIF capability at Intel Mask Operation improves yield

NASA Astrophysics Data System (ADS)

Dam, Thuc H.; Pekny, Matt; Millino, Jim; Luu, Gibson; Melwani, Nitesh; Venkatramani, Aparna; Tavassoli, Malahat

2003-08-01

At Intel Mask Operations (IMO), Standard Mechanical Interface (SMIF) processing has been employed to reduce environmental particle contamination from manual handling-related activities. SMIF handling entailed the utilization of automated robotic transfers of photoblanks/reticles between SMIF pods, whereas conventional handling utilized manual pick transfers of masks between SMIF pods with intermediate storage in Toppan compacts. The SMIF-enabling units in IMO's process line included: (1) coater, (2) exposure, (3) developer, (4) dry etcher, and (5) inspection. Each unit is equipped with automated I/O port, environmentally enclosed processing chamber, and SMIF pods. Yield metrics were utilized to demonstrate the effectiveness and advantages of SMIF processing compared to manual processing. The areas focused in this paper were blank resist coating, binary front-end reticle processing and 2nd level PSM reticle processing. Results obtained from the investigation showed yield improvements in these areas.

Managing effects in CD control from PED and PEB in advanced DUV photomask manufacturing using FEP-171 resist

NASA Astrophysics Data System (ADS)

Paulsson, Adisa; Xing, Kezhao; Fosshaug, Hans; Lundvall, Axel; Bjoernberg, Charles; Karlsson, Johan

2005-05-01

A continuing improvement in resist process is a necessity for high-end photomask fabrication. In advanced chemically amplified resist systems the lithographic performance is strongly influenced by diffusion of acid and acid quencher (i.e. bases). Beside the resist properties, e.g. size and volatility of the photoacid, the process conditions play important roles for the diffusion control. Understanding and managing these properties influences lithographic characteristics on the photomask such as CD uniformity, CD and pitch linearity, resolution, substrate contamination, clear-dark bias and iso-dense bias. In this paper we have investigated effects on the lithographic characteristics with respect to post exposure bake conditions, when using the chemically amplified resist FEP-171. We used commercially available mask blanks from the Hoya Mask Blank Division with NTAR7 chrome and an optimized resist thickness for the 248 nm laser tool at 3200Å. The photomasks were exposed on the optical DUV (248nm) Sigma7300 pattern generator. Additionally, we investigated the image stability between exposure and post exposure bake. Unlike in wafer fabrication, photomask writing requires several hours, making the resist susceptible to image blur and acid latent image degradation.

Effective EUVL mask cleaning technology solutions for mask manufacturing and in-fab mask maintenance

NASA Astrophysics Data System (ADS)

Dietze, Uwe; Dress, Peter; Waehler, Tobias; Singh, Sherjang; Jonckheere, Rik; Baudemprez, Bart

2011-03-01

Extreme Ultraviolet Lithography (EUVL) is considered the leading lithography technology choice for semiconductor devices at 16nm HP node and beyond. However, before EUV Lithography can enter into High Volume Manufacturing (HVM) of advanced semiconductor devices, the ability to guarantee mask integrity at point-of-exposure must be established. Highly efficient, damage free mask cleaning plays a critical role during the mask manufacturing cycle and throughout the life of the mask, where the absence of a pellicle to protect the EUV mask increases the risk of contamination during storage, handling and use. In this paper, we will present effective EUVL mask cleaning technology solutions for mask manufacturing and in-fab mask maintenance, which employs an intelligent, holistic approach to maximize Mean Time Between Cleans (MBTC) and extend the useful life span of the reticle. The data presented will demonstrate the protection of the capping and absorber layers, preservation of pattern integrity as well as optical and mechanical properties to avoid unpredictable CD-linewidth and overlay shifts. Experiments were performed on EUV blanks and pattern masks using various process conditions. Conditions showing high particle removal efficiency (PRE) and minimum surface layer impact were then selected for durability studies. Surface layer impact was evaluated over multiple cleaning cycles by means of UV reflectivity metrology XPS analysis and wafer prints. Experimental results were compared to computational models. Mask life time predictions where made using the same computational models. The paper will provide a generic overview of the cleaning sequence which yielded best results, but will also provide recommendations for an efficient in-fab mask maintenance scheme, addressing handling, storage, cleaning and inspection.

Inspection of imprint lithography patterns for semiconductor and patterned media

NASA Astrophysics Data System (ADS)

Resnick, Douglas J.; Haase, Gaddi; Singh, Lovejeet; Curran, David; Schmid, Gerard M.; Luo, Kang; Brooks, Cindy; Selinidis, Kosta; Fretwell, John; Sreenivasan, S. V.

2010-03-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the requirements of cost-effective device production. This work summarizes the results of defect inspections of semiconductor masks, wafers and hard disks patterned using Jet and Flash Imprint Lithography (J-FILTM). Inspections were performed with optical and e-beam based automated inspection tools. For the semiconductor market, a test mask was designed which included dense features (with half pitches ranging between 32 nm and 48 nm) containing an extensive array of programmed defects. For this work, both e-beam inspection and optical inspection were used to detect both random defects and the programmed defects. Analytical SEMs were then used to review the defects detected by the inspection. Defect trends over the course of many wafers were observed with another test mask using a KLA-T 2132 optical inspection tool. The primary source of defects over 2000 imprints were particle related. For the hard drive market, it is important to understand the defectivity of both the template and the imprinted disk. This work presents a methodology for automated pattern inspection and defect classification for imprint-patterned media. Candela CS20 and 6120 tools from KLA-Tencor map the optical properties of the disk surface, producing highresolution grayscale images of surface reflectivity, scattered light, phase shift, etc. Defects that have been identified in this manner are further characterized according to the morphology

A novel approach: high resolution inspection with wafer plane defect detection

NASA Astrophysics Data System (ADS)

Hess, Carl; Wihl, Mark; Shi, Rui-fang; Xiong, Yalin; Pang, Song

2008-05-01

High Resolution reticle inspection is well-established as a proven, effective, and efficient means of detecting yield-limiting mask defects as well as defects which are not immediately yield-limiting yet can enable manufacturing process improvements. Historically, RAPID products have enabled detection of both classes of these defects. The newly-developed Wafer Plane Inspection (WPI) detector technology meets the needs of some advanced mask manufacturers to identify the lithographically-significant defects while ignoring the other non-lithographically-significant defects. Wafer Plane Inspection accomplishes this goal by performing defect detection based on a modeled image of how the mask features would actually print in the photoresist. This has the effect of reducing sensitivity to non-printing defects while enabling higher sensitivity focused in high MEEF areas where small reticle defects still yield significant printing defects on wafers. WPI is a new inspection mode that has been developed by KLA-Tencor and is currently under test with multiple customers. It employs the same transmitted and reflected-light high-resolution images as the industry-standard high-resolution inspections, but with much more sophisticated processing involved. A rigorous mask pattern recovery algorithm is used to convert the transmitted and reflected light images into a modeled representation of the reticle. Lithographic modeling of the scanner is then used to generate an aerial image of the mask. This is followed by resist modeling to determine the exposure of the photoresist. The defect detectors are then applied on this photoresist plane so that only printing defects are detected. Note that no hardware modifications to the inspection system are required to enable this detector. The same tool will be able to perform both our standard High Resolution inspections and the Wafer Plane Inspection detector. This approach has several important features. The ability to ignore non-printing defects and to apply additional effective sensitivity in high MEEF areas enables advanced node development. In addition, the modeling allows the inclusion of important polarization effects that occur in the resist for high NA operation. This allows for the results to better match wafer print results compared to alternate approaches. Finally, the simulation easily allows for the application of arbitrary illumination profiles. With this approach, users of WPI can make use of unique or custom scanner illumination profiles. This allows the more precise modeling of profiles without inspection system hardware modification or loss of company intellectual property. This paper examines WPI in Die:Die mode. Future work includes a review of Die:Database WPI capability.

Automated evaluation of AIMS images: an approach to minimize evaluation variability

NASA Astrophysics Data System (ADS)

Dürr, Arndt C.; Arndt, Martin; Fiebig, Jan; Weiss, Samuel

2006-05-01

Defect disposition and qualification with stepper simulating AIMS tools on advanced masks of the 90nm node and below is key to match the customer's expectations for "defect free" masks, i.e. masks containing only non-printing design variations. The recently available AIMS tools allow for a large degree of automated measurements enhancing the throughput of masks and hence reducing cycle time - up to 50 images can be recorded per hour. However, this amount of data still has to be evaluated by hand which is not only time-consuming but also error prone and exhibits a variability depending on the person doing the evaluation which adds to the tool intrinsic variability and decreases the reliability of the evaluation. In this paper we present the results of an MatLAB based algorithm which automatically evaluates AIMS images. We investigate its capabilities regarding throughput, reliability and matching with handmade evaluation for a large variety of dark and clear defects and discuss the limitations of an automated AIMS evaluation algorithm.

Effects of microRNA-21 on Nerve Cell Regeneration and Neural Function Recovery in Diabetes Mellitus Combined with Cerebral Infarction Rats by Targeting PDCD4.

PubMed

Guo, Yun-Bao; Ji, Tie-Feng; Zhou, Hong-Wei; Yu, Jin-Lu

2018-03-01

We aimed to determine the effect and mechanism of microRNA-21 (miR-21) on nerve cell regeneration and nerve functional recovery in diabetes mellitus combined with cerebral infarction (DM + CI) rats by targeting PDCD4. A total of 125 male Wistar rats were selected for DM + CI rat model construction and assigned into the blank, miR-21 mimics, mimics control, miR-21 inhibitor, inhibitor control, miR-21 inhibitor + si-PDCD4 and si-PDCD4 groups. And, 20 healthy rats were selected for the normal group. Triphenylterazolium chloride (TTC) staining and HE staining were used for determination of the area of CI and pathological changes, respectively. Behaviors of rats in the eight groups were determined by forelimb placement test and balance beam walking test. Immunohistochemical staining, double immunofluorescence staining assay, Western blotting, and qRT-PCR were used to detect expressions of miR-21, PDCD4, HNA, Nestin, NeuN, β-III-Tub, PTEN, FasL, and GFAP. DNA laddering and TUNEL staining was used for cell apoptosis. TTC and HE staining confirmed that 87.5% rats were induced into CI + DM models successfully. Results of forelimb placement test and balance beam walking test showed that miR-21 mimics, and si-PCDC4 improved the nerve defect of model rats. Comparing with the blank group at the same time, rats in the miR-21 inhibitor group displayed significant decrease in the forelimb placement test score, significant increase in the balance beam walking test score, and exacerbation of nerve defect, while rats in the miR-21 mimics and si-PCDC4 groups displayed significant increase in forelimb placement test score and significant decrease in the balance beam walking test score and improvement of nerve defect situation. The HNA, Nestin, and PDCD4 expressions were decreased and the NeuN, β-III-Tub, and GFAP expressions were increased in the miR-21 mimics and si-PDCD4 groups comparing with the blank group. The results of miR-21 inhibitor group were on the contrary. In comparison to the blank group, the miR-21 mimics group and the si-PDCD4 had lower miR-21 expressions and higher expressions of PDCD4, PTEN, and FasL, while the miR-21 inhibitor group was in the opposite trend. The results of qRT-PCR were the same with Western blotting. The expressions of fluorescence in other groups were higher than the normal group; compared with the blank group, the miR-21 mimics group and the si-PDCD4 group had lower fluorescence expression and DNA ladder. However, the fluorescence expressions and DNA ladder of miR-21 inhibitor group increased markedly in contrast with the blank group. Comparing with the blank group, BrdU + /DEX + fluorescence intensity significantly enhanced in the miR-21 mimics and si-PDCD4 groups and significantly reduced in the miR-21 inhibitor group. And, comparing with the blank group, in the miR-21 mimics group, the signal strength of luciferase carrying the wild-type PDCD4 was reduced by 25%. The present studies demonstrated that miR-21 could promote the nerve cell regeneration, suppress apoptosis of nerve cells in DM + CI rats and improves the nerve defect situation of DM + CI rats by inhibiting PDCD4.

Photomask quality evaluation using lithography simulation and multi-detector MVM-SEM

NASA Astrophysics Data System (ADS)

Ito, Keisuke; Murakawa, Tsutomu; Fukuda, Naoki; Shida, Soichi; Iwai, Toshimichi; Matsumoto, Jun; Nakamura, Takayuki; Matsushita, Shohei; Hagiwara, Kazuyuki; Hara, Daisuke

2013-06-01

The detection and management of mask defects which are transferred onto wafer becomes more important day by day. As the photomask patterns becomes smaller and more complicated, using Inverse Lithography Technology (ILT) and Source Mask Optimization (SMO) with Optical Proximity Correction (OPC). To evaluate photomask quality, the current method uses aerial imaging by optical inspection tools. This technique at 1Xnm node has a resolution limit because small defects will be difficult to detect. We already reported the MEEF influence of high-end photomask using wide FOV SEM contour data of "E3630 MVM-SEM®" and lithography simulator "TrueMask® DS" of D2S Inc. in the prior paper [1]. In this paper we evaluate the correlation between our evaluation method and optical inspection tools as ongoing assessment. Also in order to reduce the defect classification work, we can compose the 3 Dimensional (3D) information of defects and can judge whether repairs of defects would be required. Moreover, we confirm the possibility of wafer plane CD measurement based on the combination between E3630 MVM-SEM® and 3D lithography simulation.

Osteogenic potential of the human bone morphogenetic protein 2 gene activated nanobone putty.

PubMed

Tian, Xiao-bin; Sun, Li; Yang, Shu-hua; Zhang, Yu-kun; Hu, Ru-yin; Fu, De-hao

2008-04-20

Nanobone putty is an injectable and bioresorbable bone substitute. The neutral-pH putty resembles hard bone tissue, does not contain polymers or plasticizers, and is self-setting and nearly isothermic, properties which are helpful for the adhesion, proliferation, and function of bone cells. The aim of this study was to investigate the osteogenic potential of human bone morphogenetic protein 2 (hBMP2) gene activated nanobone putty in inducing ectopic bone formation, and the effects of the hBMP2 gene activated nanobone putty on repairing bone defects. Twenty four Kunming mice were randomly divided into two groups. The nanobone putty + hBMP2 plasmid was injected into the right thigh muscle pouches of the mice (experiment side). The nanobone putty + blank plasmid or nanobone putty was injected into the left thigh muscle pouches of the group 1 (control side 1) or group 2 (control side 2), respectively. The effects of ectopic bone formation were evaluated by radiography, histology, and molecular biology analysis at 2 and 4 weeks after operation. Bilateral 15 mm radial defects were made in forty-eight rabbits. These rabbits were randomly divided into three groups: Group A, nanobone putty + hBMP2 plasmid; Group B, putty + blank plasmid; Group C, nanobone putty only. Six rabbits with left radial defects served as blank controls. The effect of bone repairing was evaluated by radiography, histology, molecular biology, and biomechanical analysis at 4, 8, and 12 weeks after operation. The tissue from the experimental side of the mice expressed hBMP2. Obvious cartilage and island-distributed immature bone formation in implants of the experiment side were observed at 2 weeks after operation, and massive mature bone observed at 4 weeks. No bone formation was observed in the control side of the mice. The ALP activity in the experiment side of the mice was higher than that in the control side. The tissue of Group A rabbits expressed hBMP2 protein and higher ALP level. The new bone formation rate and antibending strength of group A was significantly higher than those of group B and C. The defects in blank control were not healed. The hBMP2 gene activated nanobone putty exhibited osteoinductive ability, and had a better bone defect repair capability than that of nanobone putty only.

Reticle writer for next-generation SEMI mask standard: mask handling and exposure

NASA Astrophysics Data System (ADS)

Ehrlich, Christian

1998-12-01

The world semiconductor industry is currently preparing itself for the next evolutionary step in the ongoing development of the integrated circuit, characterized by the 0.18 to 0.15 micrometer technology. The already complex engineering task for the mask tool makers is furthermore complicated by the introduction of the new SEMI reticle standard with a 230 mm by 230 mm large and 9 mm thick quartz glass blank that will have a weight of more than one kilogram. The production of these advanced masks is already identified as a key enabling technology which will stretch the capabilities of the manufacturing process, and its equipment, to the limit. The mask making e-beam system Leica ZBA320, capable of exposing a 230 mm reticle and featuring the variable shaped beam approach with a 20 kV accelerating voltage has been introduced recently. Now the first results of e-beam exposures with this new type of mask writer are presented. Enhancements form the previous generation system include improved deflection systems, stage metrology, pattern data handling, and an address grid down to 10 nanometers. This system's specified performance enables it to produce reticles designed to support semiconductor fabrication utilizing 180 nanometer design rules, and beyond, with high accuracy and productivity.

Accurate defect die placement and nuisance defect reduction for reticle die-to-die inspections

NASA Astrophysics Data System (ADS)

Wen, Vincent; Huang, L. R.; Lin, C. J.; Tseng, Y. N.; Huang, W. H.; Tuo, Laurent C.; Wylie, Mark; Chen, Ellison; Wang, Elvik; Glasser, Joshua; Kelkar, Amrish; Wu, David

2015-10-01

Die-to-die reticle inspections are among the simplest and most sensitive reticle inspections because of the use of an identical-design neighboring-die for the reference image. However, this inspection mode can have two key disadvantages: (1) The location of the defect is indeterminate because it is unclear to the inspector whether the test or reference image is defective; and (2) nuisance and false defects from mask manufacturing noise and tool optical variation can limit the usable sensitivity. The use of a new sequencing approach for a die-to-die inspection can resolve these issues without any additional scan time, without sacrifice in sensitivity requirement, and with a manageable increase in computation load. In this paper we explore another approach for die-to-die inspections using a new method of defect processing and sequencing. Utilizing die-to-die double arbitration during defect detection has been proven through extensive testing to generate accurate placement of the defect in the correct die to ensure efficient defect disposition at the AIMS step. The use of this method maintained the required inspection sensitivity for mask quality as verified with programmed-defectmask qualification and then further validated with production masks comparing the current inspection approach to the new method. Furthermore, this approach can significantly reduce the total number of defects that need to be reviewed by essentially eliminating the nuisance and false defects that can result from a die-to-die inspection. This "double-win" will significantly reduce the effort in classifying a die-to-die inspection result and will lead to improved cycle times.

Context-based automated defect classification system using multiple morphological masks

DOEpatents

Gleason, Shaun S.; Hunt, Martin A.; Sari-Sarraf, Hamed

2002-01-01

Automatic detection of defects during the fabrication of semiconductor wafers is largely automated, but the classification of those defects is still performed manually by technicians. This invention includes novel digital image analysis techniques that generate unique feature vector descriptions of semiconductor defects as well as classifiers that use these descriptions to automatically categorize the defects into one of a set of pre-defined classes. Feature extraction techniques based on multiple-focus images, multiple-defect mask images, and segmented semiconductor wafer images are used to create unique feature-based descriptions of the semiconductor defects. These feature-based defect descriptions are subsequently classified by a defect classifier into categories that depend on defect characteristics and defect contextual information, that is, the semiconductor process layer(s) with which the defect comes in contact. At the heart of the system is a knowledge database that stores and distributes historical semiconductor wafer and defect data to guide the feature extraction and classification processes. In summary, this invention takes as its input a set of images containing semiconductor defect information, and generates as its output a classification for the defect that describes not only the defect itself, but also the location of that defect with respect to the semiconductor process layers.

Nanoimprint system development and status for high volume semiconductor manufacturing

NASA Astrophysics Data System (ADS)

Hiura, Hiromi; Takabayashi, Yukio; Takashima, Tsuneo; Emoto, Keiji; Choi, Jin; Schumaker, Phil

2016-10-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash Imprint Lithography* (J-FIL*) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. There are many criteria that determine whether a particular technology is ready for wafer manufacturing. For imprint lithography, recent attention has been given to the areas of overlay, throughput, defectivity, and mask replication. This paper reviews progress in these critical areas. Recent demonstrations have proven that mix and match overlay of less than 5nm can achieved. Further reductions require a higher order correction system. Modeling and experimental data are presented which provide a path towards reducing the overlay errors to less than 3nm. Throughput is mainly impacted by the fill time of the relief images on the mask. Improvement in resist materials provides a solution that allows 15 wafers per hour per station, or a tool throughput of 60 wafers per hour. Defectivity and mask life play a significant role relative to meeting the cost of ownership (CoO) requirements in the production of semiconductor devices. Hard particles on a wafer or mask create the possibility of inducing a permanent defect on the mask that can impact device yield and mask life. By using material methods to reduce particle shedding and by introducing an air curtain system, the lifetime of both the master mask and the replica mask can be extended. In this work, we report results that demonstrate a path towards achieving mask lifetimes of better than 1000 wafers. Finally, on the mask side, a new replication tool, the FPA-1100NR2 is introduced. Mask replication is required for nanoimprint lithography (NIL), and criteria that are crucial to the success of a replication platform include both particle control and IP accuracy. In particular, by improving the specifications on the mask chuck, residual errors of only 1nm can be realized.

Enabling inspection solutions for future mask technologies through the development of massively parallel E-Beam inspection

NASA Astrophysics Data System (ADS)

Malloy, Matt; Thiel, Brad; Bunday, Benjamin D.; Wurm, Stefan; Jindal, Vibhu; Mukhtar, Maseeh; Quoi, Kathy; Kemen, Thomas; Zeidler, Dirk; Eberle, Anna Lena; Garbowski, Tomasz; Dellemann, Gregor; Peters, Jan Hendrik

2015-09-01

The new device architectures and materials being introduced for sub-10nm manufacturing, combined with the complexity of multiple patterning and the need for improved hotspot detection strategies, have pushed current wafer inspection technologies to their limits. In parallel, gaps in mask inspection capability are growing as new generations of mask technologies are developed to support these sub-10nm wafer manufacturing requirements. In particular, the challenges associated with nanoimprint and extreme ultraviolet (EUV) mask inspection require new strategies that enable fast inspection at high sensitivity. The tradeoffs between sensitivity and throughput for optical and e-beam inspection are well understood. Optical inspection offers the highest throughput and is the current workhorse of the industry for both wafer and mask inspection. E-beam inspection offers the highest sensitivity but has historically lacked the throughput required for widespread adoption in the manufacturing environment. It is unlikely that continued incremental improvements to either technology will meet tomorrow's requirements, and therefore a new inspection technology approach is required; one that combines the high-throughput performance of optical with the high-sensitivity capabilities of e-beam inspection. To support the industry in meeting these challenges SUNY Poly SEMATECH has evaluated disruptive technologies that can meet the requirements for high volume manufacturing (HVM), for both the wafer fab [1] and the mask shop. Highspeed massively parallel e-beam defect inspection has been identified as the leading candidate for addressing the key gaps limiting today's patterned defect inspection techniques. As of late 2014 SUNY Poly SEMATECH completed a review, system analysis, and proof of concept evaluation of multiple e-beam technologies for defect inspection. A champion approach has been identified based on a multibeam technology from Carl Zeiss. This paper includes a discussion on the need for high-speed e-beam inspection and then provides initial imaging results from EUV masks and wafers from 61 and 91 beam demonstration systems. Progress towards high resolution and consistent intentional defect arrays (IDA) is also shown.

Simple solution for difficult face mask ventilation in children with orofacial clefts.

PubMed

Veerabathula, Prardhana; Patil, Manajeet; Upputuri, Omkar; Durga, Padmaja

2014-10-01

Significant air leak from the facial cleft predisposes to difficult mask ventilation. The reported techniques of use of sterile gauze, larger face mask and laryngeal mask airway after intravenous induction have limited application in uncooperative children. We describe the use of dental impression material molded to the facial contour to cover the facial defect and aid ventilation with an appropriate size face mask in a child with a bilateral Tessier 3 anomaly. © 2014 John Wiley & Sons Ltd.

Nanoimprint wafer and mask tool progress and status for high volume semiconductor manufacturing

NASA Astrophysics Data System (ADS)

Matsuoka, Yoichi; Seki, Junichi; Nakayama, Takahiro; Nakagawa, Kazuki; Azuma, Hisanobu; Yamamoto, Kiyohito; Sato, Chiaki; Sakai, Fumio; Takabayashi, Yukio; Aghili, Ali; Mizuno, Makoto; Choi, Jin; Jones, Chris E.

2016-10-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash* Imprint Lithography (J-FIL*) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. There are many criteria that determine whether a particular technology is ready for wafer manufacturing. Defectivity and mask life play a significant role relative to meeting the cost of ownership (CoO) requirements in the production of semiconductor devices. Hard particles on a wafer or mask create the possibility of inducing a permanent defect on the mask that can impact device yield and mask life. By using material methods to reduce particle shedding and by introducing an air curtain system, the lifetime of both the master mask and the replica mask can be extended. In this work, we report results that demonstrate a path towards achieving mask lifetimes of better than 1000 wafers. On the mask side, a new replication tool, the FPA-1100 NR2 is introduced. Mask replication is required for nanoimprint lithography (NIL), and criteria that are crucial to the success of a replication platform include both particle control, resolution and image placement accuracy. In this paper we discuss the progress made in both feature resolution and in meeting the image placement specification for replica masks.

Defect reaction network in Si-doped InAs. Numerical predictions.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schultz, Peter A.

This Report characterizes the defects in the def ect reaction network in silicon - doped, n - type InAs predicted with first principles density functional theory. The reaction network is deduced by following exothermic defect reactions starting with the initially mobile interstitial defects reacting with common displacement damage defects in Si - doped InAs , until culminating in immobile reaction p roducts. The defect reactions and reaction energies are tabulated, along with the properties of all the silicon - related defects in the reaction network. This Report serves to extend the results for the properties of intrinsic defects in bulkmore » InAs as colla ted in SAND 2013 - 2477 : Simple intrinsic defects in InAs : Numerical predictions to include Si - containing simple defects likely to be present in a radiation - induced defect reaction sequence . This page intentionally left blank« less

Measurement of sulphated glycosaminoglycans production after autologous 'chondrocytes-fibrin' constructs implantation in sheep knee joint.

PubMed

Munirah, S; Samsudin, O C; Chen, H C; Salmah, S H Sharifah; Aminuddin, B S; Ruszymah, B H I

2008-07-01

Chondrocytes were isolated from articular cartilage biopsy and were cultivated in vitro. Approximately 30 million of cultured chondrocytes per ml were incorporated with autologous plasma-derived fibrin to form three-dimensional construct. Full-thickness punch hole defects were created in lateral and medial femoral condyles. The defects were implanted either with the autologous 'chondrocytes-fibrin' construct (ACFC), autologous chondrocytes (ACI) or fibrin blank (AF). Sheep were euthanized after 12 weeks. The gross morphology of all defects treated with ACFC implantation, ACI and AF exhibited median scores which correspond to a nearly normal appearance according to the International Cartilage Repair Society (ICRS) classification. ACFC significantly enhanced cartilage repair compared to ACI and AF in accordance with the modified O'Driscoll histological scoring scale. The relative sulphated glycosaminoglycans content (%) was significantly higher (p < 0.05) in ACFC when compared to control groups; ACI vs. fibrin only vs. untreated (blank). Results showed that ACFC implantation exhibited superior cartilage-like tissue regeneration compared to ACI. If the result is applicable to the human, it possibly will improve the existing treatment approaches for cartilage restoration in orthopaedic surgery.

Nanoparticle generation and interactions with surfaces in vacuum systems

NASA Astrophysics Data System (ADS)

Khopkar, Yashdeep

Extreme ultraviolet lithography (EUVL) is the most likely candidate as the next generation technology beyond immersion lithography to be used in high volume manufacturing in the semiconductor industry. One of the most problematic areas in the development process is the fabrication of mask blanks used in EUVL. As the masks are reflective, there is a chance that any surface aberrations in the form of bumps or pits could be printed on the silicon wafers. There is a strict tolerance to the number density of such defects on the mask that can be used in the final printing process. Bumps on the surface could be formed when particles land on the mask blank surface during the deposition of multiple bi-layers of molybdenum and silicon. To identify, and possibly mitigate the source of particles during mask fabrication, SEMATECH investigated particle generation in the VEECO Nexus deposition tool. They found several sources of particles inside the tool such as valves. To quantify the particle generation from vacuum components, a test bench suitable for evaluating particle generation in the sub-100 nm particle size range was needed. The Nanoparticle test bench at SUNY Polytechnic Institute was developed as a sub-set of the overall SEMATECH suite of metrology tools used to identify and quantify sources of particles inside process tools that utilize these components in the semiconductor industry. Vacuum valves were tested using the test bench to investigate the number, size and possible sources of particles inside the valves. Ideal parameters of valve operation were also investigated using a 300-mm slit valve with the end goal of finding optimized parameters for minimum particle generation. SEMATECH also pursued the development of theoretical models of particle transport replicating the expected conditions in an ion beam deposition chamber assuming that the particles were generated. In the case of the ion beam deposition tool used in the mask blank fabrication process, the ion beam in the tool could significantly accelerate particles. Assuming that these particles are transported to various surfaces inside the deposition tool, the next challenge is to enhance the adhesion of the particles on surfaces that are located in the non-critical areas inside the tool. However, for particles in the sub-100 nm size range, suitable methods do not exist that can compare the adhesion probability of particles upon impact for a wide range of impact velocities, surfaces and particle types. Traditional methods, which rely on optical measurement of particle velocities in the micron-size regime, cannot be used for sub-100 nm particles as the particles do not scatter sufficient light for the detectors to function. All the current methods rely on electrical measurements taken from impacting particles onto a surface. However, for sub-100 nm particles, the impact velocity varies in different regions of the same impaction spot. Therefore, electrical measurements are inadequate to quantify the exact adhesion characteristics at different impact velocities to enable a comparison of multiple particle-surface systems. Therefore, we propose a new method based on the use of scanning electron microscopy (SEM) imaging to study the adhesion of particles upon impact on surfaces. The use of SEM imaging allows for single particle detection across a single impaction spot and, therefore, enables the comparison of different regions with different impact velocities in a single impaction spot. The proposed method will provide comprehensive correlation between the adhesion probability of sub-100 nm particles and a wide range of impact velocities and angles. The location of each particle is compared with impact velocity predicted by using computational fluid dynamics methods to generate a comprehensive adhesion map involving the impact of 70 nm particles on a polished surface across a large impact velocity range. The final adhesion probability map shows higher adhesion at oblique impact angles compared to normal incidence impacts. Theoretical and experiments with micron-sized particles have shown that the contact area between the particle and the surface decreases at lower incidence angles which results in a decrease in the adhesion probability of the particle. The most likely cause of this result was the role of plastic deformation of particles and its effect on adhesion. Therefore, 70 nm sucrose particles were also impacted under similar impaction conditions to compare the role of plastic deformation on the adhesion characteristics of a particle. Sucrose particles have approximately 10 times more modulus of elasticity than Polystyrene Latex (PSL) particles and were found to have almost no adhesion on the surface at the same impact velocities where the highest adhesion of PSL particles was measured. Besides the role of plastic deformation, the influence of other possible errors in this process was investigated but not found to be significant. (Abstract shortened by UMI.).

The bone formation in vitro and mandibular defect repair using PLGA porous scaffolds.

PubMed

Ren, Tianbin; Ren, Jie; Jia, Xiaozhen; Pan, Kefeng

2005-09-15

Highly porous scaffolds of poly(lactide-co-glycolide) (PLGA) were prepared by solution-casting/salt-leaching method. The in vitro degradation behavior of PLGA scaffold was investigated by measuring the change of normalized weight, water absorption, pH, and molecular weight during degradation period. Mesenchymal stem cells (MSCs) were seeded and cultured in three-dimensional PLGA scaffolds to fabricate in vitro tissue engineering bone, which was investigated by cell morphology, cell number and deposition of mineralized matrix. The proliferation of seeded MSCs and their differentiated function were demonstrated by experimental results. To compare the reconstructive functions of different groups, mandibular defect repair of rabbit was made with PLGA/MSCs tissue engineering bone, control PLGA scaffold, and blank group without scaffold. Histopathologic methods were used to estimate the reconstructive functions. The result suggests that it is feasible to regenerate bone tissue in vitro using PLGA foams with pore size ranging from 100-250 microm as scaffolding for the transplantation of MSCs, and the PLGA/MSCs tissue engineering bone can greatly promote cell growth and have better healing functions for mandibular defect repair. The defect can be completely recuperated after 3 months with PLGA/MSCs tissue engineering bone, and the contrastive experiments show that the defects could not be repaired with blank PLGA scaffold. PLGA/MSCs tissue engineering bone has great potential as appropriate replacement for successful repair of bone defect. (c) 2005 Wiley Periodicals, Inc. J Biomed Mater Res, 2005.

Real-time line-width measurements: a new feature for reticle inspection systems

NASA Astrophysics Data System (ADS)

Eran, Yair; Greenberg, Gad; Joseph, Amnon; Lustig, Cornel; Mizrahi, Eyal

1997-07-01

The significance of line width control in mask production has become greater with the lessening of defect size. There are two conventional methods used for controlling line widths dimensions which employed in the manufacturing of masks for sub micron devices. These two methods are the critical dimensions (CD) measurement and the detection of edge defects. Achieving reliable and accurate control of line width errors is one of the most challenging tasks in mask production. Neither of the two methods cited above (namely CD measurement and the detection of edge defects) guarantees the detection of line width errors with good sensitivity over the whole mask area. This stems from the fact that CD measurement provides only statistical data on the mask features whereas applying edge defect detection method checks defects on each edge by itself, and does not supply information on the combined result of error detection on two adjacent edges. For example, a combination of a small edge defect together with a CD non- uniformity which are both within the allowed tolerance, may yield a significant line width error, which will not be detected using the conventional methods (see figure 1). A new approach for the detection of line width errors which overcomes this difficulty is presented. Based on this approach, a new sensitive line width error detector was developed and added to Orbot's RT-8000 die-to-database reticle inspection system. This innovative detector operates continuously during the mask inspection process and scans (inspects) the entire area of the reticle for line width errors. The detection is based on a comparison of measured line width that are taken on both the design database and the scanned image of the reticle. In section 2, the motivation for developing this new detector is presented. The section covers an analysis of various defect types, which are difficult to detect using conventional edge detection methods or, alternatively, CD measurements. In section 3, the basic concept of the new approach is introduced together with a description of the new detector and its characteristics. In section 4, the calibration process that took place in order to achieve reliable and repeatable line width measurements is presented. The description of an experiments conducted in order to evaluate the sensitivity of the new detector is given in section 5, followed by a report of the results of this evaluation. The conclusions are presented in section 6.

Increasing reticle inspection efficiency and reducing wafer printchecks at 14nm using automated defect classification and simulation

NASA Astrophysics Data System (ADS)

Paracha, Shazad; Goodman, Eliot; Eynon, Benjamin G.; Noyes, Ben F.; Ha, Steven; Kim, Jong-Min; Lee, Dong-Seok; Lee, Dong-Heok; Cho, Sang-Soo; Ham, Young M.; Vacca, Anthony D.; Fiekowsky, Peter J.; Fiekowsky, Daniel I.

2014-10-01

IC fabs inspect critical masks on a regular basis to ensure high wafer yields. These requalification inspections are costly for many reasons including the capital equipment, system maintenance, and labor costs. In addition, masks typically remain in the "requal" phase for extended, non-productive periods of time. The overall "requal" cycle time in which reticles remain non-productive is challenging to control. Shipping schedules can slip when wafer lots are put on hold until the master critical layer reticle is returned to production. Unfortunately, substituting backup critical layer reticles can significantly reduce an otherwise tightly controlled process window adversely affecting wafer yields. One major requal cycle time component is the disposition process of mask inspections containing hundreds of defects. Not only is precious non-productive time extended by reviewing hundreds of potentially yield-limiting detections, each additional classification increases the risk of manual review techniques accidentally passing real yield limiting defects. Even assuming all defects of interest are flagged by operators, how can any person's judgment be confident regarding lithographic impact of such defects? The time reticles spend away from scanners combined with potential yield loss due to lithographic uncertainty presents significant cycle time loss and increased production costs An automatic defect analysis system (ADAS), which has been in fab production for numerous years, has been improved to handle the new challenges of 14nm node automate reticle defect classification by simulating each defect's printability under the intended illumination conditions. In this study, we have created programmed defects on a production 14nm node critical-layer reticle. These defects have been analyzed with lithographic simulation software and compared to the results of both AIMS optical simulation and to actual wafer prints.

Current status of x-ray mask manufacturing at the Microlithographic Mask Development Center

NASA Astrophysics Data System (ADS)

Kimmel, Kurt R.; Hughes, Patrick J.

1996-07-01

The Microlithographic Mask Development Center (MMD) has been the focal point of X-ray mask development efforts in the United States since its inception in 1993. Funded by the Advanced Research Projects Agency (ARPA), and with technical support from the Proximity X-ray Lithography Association (AT&T, IBM, Loral Federal Systems, and Motorola) the MMD has recently made dramatic advances in mask fabrication. Numerous defect-free 64Mb and 256Mb DRAM masks have been made on both boron-doped silicon and silicon carbide substrates. Image-placement error of less than 35nm 3 sigma is achieved with high yield. Image-size (critical dimension) control of 25nm 3 sigma on 250nm nominal images is representative performance. This progress is being made in a manufacturing environment with significant volumes, multiple customers, multiple substrate configurations, and fast turnaround-time (TAT) requirements. The MMD state-of-the-art equipment infrastructure has made much of this progress possible. This year the MMD qualified the EL-4, an IBM-designed-and-built variable-shaped-spot e-beam system. The fundamental performance parameters of this system will be described. Operational techniques of multiple partial exposure writing and product specific emulation (PSE) have been implemented to improve image-placement accuracy with remarkable success. Image-size control was studied in detail with contributory components separated. Defect density was systematically reduced to yield defect-free masks while simultaneously tightening inspection criteria. Information about these and other recent engineering highlights will be reported. An outline of the primary engineering challenges and goals for 1996 and status of progress toward 100 nm design rule capability will also be given.

Development of hybrid scaffolds using ceramic and hydrogel for articular cartilage tissue regeneration.

PubMed

Seol, Young-Joon; Park, Ju Young; Jeong, Wonju; Kim, Tae-Ho; Kim, Shin-Yoon; Cho, Dong-Woo

2015-04-01

The regeneration of articular cartilage consisting of hyaline cartilage and hydrogel scaffolds has been generally used in tissue engineering. However, success in in vivo studies has been rarely reported. The hydrogel scaffolds implanted into articular cartilage defects are mechanically unstable and it is difficult for them to integrate with the surrounding native cartilage tissue. Therefore, it is needed to regenerate cartilage and bone tissue simultaneously. We developed hybrid scaffolds with hydrogel scaffolds for cartilage tissue and with ceramic scaffolds for bone tissue. For in vivo study, hybrid scaffolds were press-fitted into osteochondral tissue defects in a rabbit knee joints and the cartilage tissue regeneration in blank, hydrogel scaffolds, and hybrid scaffolds was compared. In 12th week after implantation, the histological and immunohistochemical analyses were conducted to evaluate the cartilage tissue regeneration. In the blank and hydrogel scaffold groups, the defects were filled with fibrous tissues and the implanted hydrogel scaffolds could not maintain their initial position; in the hybrid scaffold group, newly generated cartilage tissues were morphologically similar to native cartilage tissues and were smoothly connected to the surrounding native tissues. This study demonstrates hybrid scaffolds containing hydrogel and ceramic scaffolds can provide mechanical stability to hydrogel scaffolds and enhance cartilage tissue regeneration at the defect site. © 2014 Wiley Periodicals, Inc.

Photomask quality assessment solution for 90-nm technology node

NASA Astrophysics Data System (ADS)

Ohira, Katsumi; Chung, Dong Hoon P.; Nobuyuki, Yoshioka; Tateno, Motonari; Matsumura, Kenichi; Chen, Jiunn-Hung; Luk-Pat, Gerard T.; Fukui, Norio; Tanaka, Yoshio

2004-08-01

As 90 nm LSI devices are about to enter pre-production, the cost and turn-around time of photomasks for such devices will be key factors for success in device production. Such devices will be manufactured with state-of-the-art 193nm photolithography systems. Photomasks for these devices are being produced with the most advanced equipment, material and processing technologies and yet, quality assurance still remains an issue for volume production. These issues include defect classification and disposition due to the insufficient resolution of the defect inspection system at conventional review and classification processes and to aggressive RETs, uncertainty of the impact the defects have on the printed feature as well as inconsistencies of classical defect specifications as applied in the sub-wavelength era are becoming a serious problem. Simulation-based photomask qualification using the Virtual Stepper System is widely accepted today as a reliable mask quality assessment tool of mask defects for both the 180 nm and 130 nm technology nodes. This study examines the extendibility of the Virtual Stepper System to 90nm technology node. The proposed method of simulation-based mask qualification uses aerial image defect simulation in combination with a next generation DUV inspection system with shorter wavelength (266nm) and small pixel size combined with DUV high-resolution microscope for some defect cases. This paper will present experimental results that prove the applicability for enabling 90nm technology nodes. Both contact and line/space patterns with varies programmed defects on ArF Attenuated PSM will be used. This paper will also address how to make the strategy production-worthy.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Claus, Rene A.; Wang, Yow-Gwo; Wojdyla, Antoine

Extreme Ultraviolet (EUV) Lithography mask defects were examined on the actinic mask imaging system, SHARP, at Lawrence Berkeley National Laboratory. Also, a quantitative phase retrieval algorithm based on the Weak Object Transfer Function was applied to the measured through-focus aerial images to examine the amplitude and phase of the defects. The accuracy of the algorithm was demonstrated by comparing the results of measurements using a phase contrast zone plate and a standard zone plate. Using partially coherent illumination to measure frequencies that would otherwise fall outside the numerical aperture (NA), it was shown that some defects are smaller than themore » conventional resolution of the microscope. We found that the programmed defects of various sizes were measured and shown to have both an amplitude and a phase component that the algorithm is able to recover.« less

Maskless micro-ion-beam reduction lithography system

DOEpatents

Leung, Ka-Ngo; Barletta, William A.; Patterson, David O.; Gough, Richard A.

2005-05-03

A maskless micro-ion-beam reduction lithography system is a system for projecting patterns onto a resist layer on a wafer with feature size down to below 100 nm. The MMRL system operates without a stencil mask. The patterns are generated by switching beamlets on and off from a two electrode blanking system or pattern generator. The pattern generator controllably extracts the beamlet pattern from an ion source and is followed by a beam reduction and acceleration column.

Parametric studies and characterization measurements of x-ray lithography mask membranes

NASA Astrophysics Data System (ADS)

Wells, Gregory M.; Chen, Hector T. H.; Engelstad, Roxann L.; Palmer, Shane R.

1991-08-01

The techniques used in the experimental characterization of thin membranes are considered for their potential use as mask blanks for x-ray lithography. Among the parameters of interest for this evaluation are the film's stress, fracture strength, uniformity of thickness, absorption in the x-ray and visible spectral regions and the modulus and grain structure of the material. The experimental techniques used for measuring these properties are described. The accuracy and applicability of the assumptions used to derive the formulas that relate the experimental measurements to the parameters of interest are considered. Experimental results for silicon carbide and diamond films are provided. Another characteristic needed for an x-ray mask carrier is radiation stability. The number of x-ray exposures expected to be performed in the lifetime of an x-ray mask on a production line is on the order of 107. The dimensional stability requirements placed on the membranes during this period are discussed. Interferometric techniques that provide sufficient sensitivity for these stability measurements are described. A comparison is made between the different techniques that have been developed in term of the information that each technique provides, the accuracy of the various techniques, and the implementation issues that are involved with each technique.

Automated real-time detection of defects during machining of ceramics

DOEpatents

Ellingson, W.A.; Sun, J.

1997-11-18

Apparatus for the automated real-time detection and classification of defects during the machining of ceramic components employs an elastic optical scattering technique using polarized laser light. A ceramic specimen is continuously moved while being machined. Polarized laser light is directed onto the ceramic specimen surface at a fixed position just aft of the machining tool for examination of the newly machined surface. Any foreign material near the location of the laser light on the ceramic specimen is cleared by an air blast. As the specimen is moved, its surface is continuously scanned by the polarized laser light beam to provide a two-dimensional image presented in real-time on a video display unit, with the motion of the ceramic specimen synchronized with the data acquisition speed. By storing known ``feature masks`` representing various surface and sub-surface defects and comparing measured defects with the stored feature masks, detected defects may be automatically characterized. Using multiple detectors, various types of defects may be detected and classified. 14 figs.

Automated real-time detection of defects during machining of ceramics

DOEpatents

Ellingson, William A.; Sun, Jiangang

1997-01-01

Apparatus for the automated real-time detection and classification of defects during the machining of ceramic components employs an elastic optical scattering technique using polarized laser light. A ceramic specimen is continuously moved while being machined. Polarized laser light is directed onto the ceramic specimen surface at a fixed position just aft of the machining tool for examination of the newly machined surface. Any foreign material near the location of the laser light on the ceramic specimen is cleared by an air blast. As the specimen is moved, its surface is continuously scanned by the polarized laser light beam to provide a two-dimensional image presented in real-time on a video display unit, with the motion of the ceramic specimen synchronized with the data acquisition speed. By storing known "feature masks" representing various surface and sub-surface defects and comparing measured defects with the stored feature masks, detected defects may be automatically characterized. Using multiple detectors, various types of defects may be detected and classified.

Increasing reticle inspection efficiency and reducing wafer print-checks using automated defect classification and simulation

NASA Astrophysics Data System (ADS)

Ryu, Sung Jae; Lim, Sung Taek; Vacca, Anthony; Fiekowsky, Peter; Fiekowsky, Dan

2013-09-01

IC fabs inspect critical masks on a regular basis to ensure high wafer yields. These requalification inspections are costly for many reasons including the capital equipment, system maintenance, and labor costs. In addition, masks typically remain in the "requal" phase for extended, non-productive periods of time. The overall "requal" cycle time in which reticles remain non-productive is challenging to control. Shipping schedules can slip when wafer lots are put on hold until the master critical layer reticle is returned to production. Unfortunately, substituting backup critical layer reticles can significantly reduce an otherwise tightly controlled process window adversely affecting wafer yields. One major requal cycle time component is the disposition process of mask inspections containing hundreds of defects. Not only is precious non-productive time extended by reviewing hundreds of potentially yield-limiting detections, each additional classification increases the risk of manual review techniques accidentally passing real yield limiting defects. Even assuming all defects of interest are flagged by operators, how can any person's judgment be confident regarding lithographic impact of such defects? The time reticles spend away from scanners combined with potential yield loss due to lithographic uncertainty presents significant cycle time loss and increased production costs. Fortunately, a software program has been developed which automates defect classification with simulated printability measurement greatly reducing requal cycle time and improving overall disposition accuracy. This product, called ADAS (Auto Defect Analysis System), has been tested in both engineering and high-volume production environments with very successful results. In this paper, data is presented supporting significant reduction for costly wafer print checks, improved inspection area productivity, and minimized risk of misclassified yield limiting defects.

Design of Channel Type Indirect Blank Holder for Prevention of Wrinkling and Fracture in Hot Stamping Process

NASA Astrophysics Data System (ADS)

Choi, Hong-seok; Ha, Se-yoon; Cha, Seung-hoon; kang, Chung-gil; Kim, Byung-min

2011-08-01

The hot stamping process has been used in the automotive industry to reduce the weight of the body-in-white and to increase passenger safety via improved crashworthiness. In this study, a new form die with a simple structure that can prevent defects such as wrinkle and fracture is proposed for the manufacture of hot stamped components. The wrinkling at the flange cannot be eliminated when using a conventional form die. It is known that the initiation of wrinkling is influenced by many factors such as the mechanical properties of the sheet material, geometry of the sheet and tool, and other process parameters, including the blank holding force (BHF) and the contact conditions. In this research, channel type indirect blank holder (CIBH) is introduced to replace general blank holder for manufacturing the hot stamped center pillar. First, we investigate the tension force acting on the blank according to the channel shapes. We determine the appropriate range by comparing the tension force with the upper and lower BHFs in a conventional stamping process. We then use FE-analysis to study the influence of the slope angle and corner radius of the channel on the formability. Finally, the center pillar is manufactured using the form die with the selected channel.

Guided Bone Regeneration Using Collagen Scaffolds, Growth Factors, and Periodontal Ligament Stem Cells for Treatment of Peri-Implant Bone Defects In Vivo

PubMed Central

Scholz, Malte; Baudisch, Maria; Liese, Jan; Frerich, Bernhard; Lang, Hermann

2017-01-01

Introduction The aim of the study was an evaluation of different approaches for guided bone regeneration (GBR) of peri-implant defects in an in vivo animal model. Materials and Methods In minipigs (n = 15), peri-implant defects around calcium phosphate- (CaP-; n = 46) coated implants were created and randomly filled with (1) blank, (2) collagen/hydroxylapatite/β-tricalcium phosphate scaffold (CHT), (3) CHT + growth factor cocktail (GFC), (4) jellyfish collagen matrix, (5) jellyfish collagen matrix + GFC, (6) collagen powder, and (7) collagen powder + periodontal ligament stem cells (PDLSC). Additional collagen membranes were used for coverage of the defects. After 120 days of healing, bone growth was evaluated histologically (bone to implant contact (BIC;%)), vertical bone apposition (VBA; mm), and new bone height (NBH; %). Results In all groups, new bone formation was seen. Though, when compared to the blank group, no significant differences were detected for all parameters. BIC and NBH in the group with collagen matrix as well as the group with the collagen matrix + GFC were significantly less when compared to the collagen powder group (all: p < 0.003). Conclusion GBR procedures, in combination with CaP-coated implants, will lead to an enhancement of peri-implant bone growth. There was no additional significant enhancement of osseous regeneration when using GFC or PDLSC. PMID:28951742

Guided Bone Regeneration Using Collagen Scaffolds, Growth Factors, and Periodontal Ligament Stem Cells for Treatment of Peri-Implant Bone Defects In Vivo.

PubMed

Kämmerer, Peer W; Scholz, Malte; Baudisch, Maria; Liese, Jan; Wegner, Katharina; Frerich, Bernhard; Lang, Hermann

2017-01-01

The aim of the study was an evaluation of different approaches for guided bone regeneration (GBR) of peri-implant defects in an in vivo animal model. In minipigs ( n = 15), peri-implant defects around calcium phosphate- (CaP-; n = 46) coated implants were created and randomly filled with (1) blank, (2) collagen/hydroxylapatite/ β -tricalcium phosphate scaffold (CHT), (3) CHT + growth factor cocktail (GFC), (4) jellyfish collagen matrix, (5) jellyfish collagen matrix + GFC, (6) collagen powder, and (7) collagen powder + periodontal ligament stem cells (PDLSC). Additional collagen membranes were used for coverage of the defects. After 120 days of healing, bone growth was evaluated histologically (bone to implant contact (BIC;%)), vertical bone apposition (VBA; mm), and new bone height (NBH; %). In all groups, new bone formation was seen. Though, when compared to the blank group, no significant differences were detected for all parameters. BIC and NBH in the group with collagen matrix as well as the group with the collagen matrix + GFC were significantly less when compared to the collagen powder group (all: p < 0.003). GBR procedures, in combination with CaP-coated implants, will lead to an enhancement of peri-implant bone growth. There was no additional significant enhancement of osseous regeneration when using GFC or PDLSC.

Advanced repair solution of clear defects on HTPSM by using nanomachining tool

NASA Astrophysics Data System (ADS)

Lee, Hyemi; Kim, Munsik; Jung, Hoyong; Kim, Sangpyo; Yim, Donggyu

2015-10-01

As the mask specifications become tighter for low k1 lithography, more aggressive repair accuracy is required below sub 20nm tech. node. To meet tight defect specifications, many maskshops select effective repair tools according to defect types. Normally, pattern defects are repaired by the e-beam repair tool and soft defects such as particles are repaired by the nanomachining tool. It is difficult for an e-beam repair tool to remove particle defects because it uses chemical reaction between gas and electron, and a nanomachining tool, which uses physical reaction between a nano-tip and defects, cannot be applied for repairing clear defects. Generally, film deposition process is widely used for repairing clear defects. However, the deposited film has weak cleaning durability, so it is easily removed by accumulated cleaning process. Although the deposited film is strongly attached on MoSiN(or Qz) film, the adhesive strength between deposited Cr film and MoSiN(or Qz) film becomes weaker and weaker by the accumulated energy when masks are exposed in a scanner tool due to the different coefficient of thermal expansion of each materials. Therefore, whenever a re-pellicle process is needed to a mask, all deposited repair points have to be confirmed whether those deposition film are damaged or not. And if a deposition point is damaged, repair process is needed again. This process causes longer and more complex process. In this paper, the basic theory and the principle are introduced to recover clear defects by using nanomachining tool, and the evaluated results are reviewed at dense line (L/S) patterns and contact hole (C/H) patterns. Also, the results using a nanomachining were compared with those using an e-beam repair tool, including the cleaning durability evaluated by the accumulated cleaning process. Besides, we discuss the phase shift issue and the solution about the image placement error caused by phase error.

Laboratory demonstration of an optical vortex mask coronagraph using photonic crystal

NASA Astrophysics Data System (ADS)

Murakami, N.; Baba, N.; Ise, A.; Sakamoto, M.; Oka, K.

2010-10-01

Photonic crystal, artificial periodic nanostructure, is an attractive device for constructing focal-plane phase-mask coronagraphs such as segmented phase masks (four-quadrant, eight-octant, and 4N-segmented ones) and an optical vortex mask (OVM), because of its extremely small manufacturing defect. Recently, speckle-noise limited contrast has been demonstrated for two monochromatic lasers by using the eight-octant phase-mask made of the photonic crystal (Murakami et al. 2010, ApJ, 714, 772). We applied the photonic-crystal device to the OVM coronagraph. The OVM is more advantageous over the segmented phase masks because it does not have discontinuities other than a central singular point and provides a full on-sky field of view. For generating an achromatic optical vortex, we manufactured an axially-symmetric half-wave plate (ASHWP). It is expected that a size of the manufacturing defect due to the central singularity is an order of several hundreds nanometers. The ASHWP is placed between two circular polarizers for modulating a Pancharatnam phase. A continuous spiral phase modulation is then implemented achromatically. We carried out preliminary laboratory demonstration of the OVM coronagraph using two monochromatic lasers as a model star (wavelengths of 532 nm and 633 nm). We report a principle of the achromatic optical-vortex generation, and results of the laboratory demonstration of the OVM coronagraph.

Observation of EUVL mask using coherent EUV scatterometry microscope with high-harmonic-generation EUV source

NASA Astrophysics Data System (ADS)

Mamezaki, Daiki; Harada, Tetsuo; Nagata, Yutaka; Watanabe, Takeo

2017-07-01

In extreme ultraviolet (EUV) lithography, development of review tools for EUV mask pattern and phase defect at working wavelength of 13.5 nm is required. The EUV mask is composed of an absorber pattern (50 - 70 nm thick) and Mo/Si multilayer (280 nm thick) on a glass substrate. This mask pattern seems three-dimensional (3D) structure. This 3D structure would modulate EUV reflection phase, which would cause focus and pattern shifts. Thus, EUV phase imaging is important to evaluate this phase modulation. We have developed coherent EUV scatterometry microscope (CSM), which is a simple microscope without objective optics. EUV phase and intensity image are reconstructed with diffraction images by ptychography with coherent EUV illumination. The high-harmonic-generation (HHG) EUV source was employed for standalone CSM system. In this study, we updated HHG system of pump-laser reduction and gas-pressure control. Two types of EUV mask absorber patterns were observed. An 88-nm lines-and-spaces and a cross-line patterns were clearly reconstructed by ptychography. In addition, a natural defect with 2-μm diameter on the cross-line was well reconstructed. This demonstrated the high capability of the standalone CSM, which system will be used in the factories, such as mask shops and semiconductor fabrication plants.

Randomly displaced phase distribution design and its advantage in page-data recording of Fourier transform holograms.

PubMed

Emoto, Akira; Fukuda, Takashi

2013-02-20

For Fourier transform holography, an effective random phase distribution with randomly displaced phase segments is proposed for obtaining a smooth finite optical intensity distribution in the Fourier transform plane. Since unitary phase segments are randomly distributed in-plane, the blanks give various spatial frequency components to an image, and thus smooth the spectrum. Moreover, by randomly changing the phase segment size, spike generation from the unitary phase segment size in the spectrum can be reduced significantly. As a result, a smooth spectrum including sidebands can be formed at a relatively narrow extent. The proposed phase distribution sustains the primary functions of a random phase mask for holographic-data recording and reconstruction. Therefore, this distribution is expected to find applications in high-density holographic memory systems, replacing conventional random phase mask patterns.

Stamping of Thin-Walled Structural Components with Magnesium Alloy AZ31 Sheets

NASA Astrophysics Data System (ADS)

Chen, Fuh-Kuo; Chang, Chih-Kun

2005-08-01

In the present study, the stamping process for manufacturing cell phone cases with magnesium alloy AZ31 sheets was studied using both the experimental approach and the finite element analysis. In order to determine the proper forming temperature and set up a fracture criterion, tensile tests and forming limit tests were first conducted to obtain the mechanical behaviors of AZ31 sheets at various elevated temperatures. The mechanical properties of Z31 sheets obtained from the experiments were then adopted in the finite element analysis to investigate the effects of the process parameters on the formability of the stamping process of cell phone cases. The finite element simulation results revealed that both the fracture and wrinkle defects could not be eliminated at the same time by adjusting blank-holder force or blank size. A drawbead design was then performed using the finite element simulations to determine the size and the location of drawbead required to suppress the wrinkle defect. An optimum stamping process, including die geometry, forming temperature, and blank dimension, was then determined for manufacturing the cell phone cases. The finite element analysis was validated by the good agreement between the simulation results and the experimental data. It confirms that the cell phone cases can be produced with magnesium alloy AZ31 sheet by the stamping process at elevated temperatures.

Modeling and Observations of Phase-Mask Trapezoidal Profiles with Grating-Fiber Image Reproduction

NASA Technical Reports Server (NTRS)

Lyons, Donald R.; Lindesay, James V.; Lee, Hyung R.; Ndlela, Zolili U.; Thompso, Erica J.

2000-01-01

We report on an investigation of the trapezoidal design and fabrication defects in phase masks used to produce Bragg reflection gratings in optical fibers. We used a direct visualization technique to examine the nonuniformity of the interference patterns generated by several phase masks. Fringe patterns from the phase masks are compared with the analogous patterns resulting from two-beam interference. Atomic force microscope imaging of the actual phase gratings that give rise to anomalous fringe patterns is used to determine input parameters for a general theoretical model. Phase masks with pitches of 0.566 and 1.059 microns are modeled and investigated.

A review of nanoimprint lithography for high-volume semiconductor device manufacturing

NASA Astrophysics Data System (ADS)

Resnick, Douglas J.; Choi, Jin

2017-06-01

Imprint lithography has been shown to be a promising technique for the replication of nanoscale features. Jet and flash imprint lithography (J-FIL) [jet and flash imprint lithography and J-FIL are trademarks of Molecular Imprints, Inc.] involves the field-by-field deposition and exposure of a low-viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid, which then quickly flows into the relief patterns in the mask by capillary action. After this filling step, the resist is cross-linked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. There are many criteria that determine whether a particular technology is ready for wafer manufacturing. Included on the list are overlay, throughput, and defectivity. The most demanding devices now require an overlay of better than 4 nm, 3σ. Throughput for an imprint tool is generally targeted at 80 wafers/h. Defectivity and mask life play a significant role relative to meeting the cost of ownership (CoO) requirements in the production of semiconductor devices. The purpose of this paper is to report the status of throughput and defectivity work and to describe the progress made in addressing overlay for advanced devices. To address high-order corrections, a high-order distortion correction (HODC) system is introduced. The combination of applying magnification actuation to the mask and temperature correction to the wafer is described in detail. Examples are presented for the correction of K7, K11, and K17 distortions as well as distortions on actual device wafers.

78 FR 23458 - Airworthiness Directives; Dassault Aviation Airplanes

Federal Register 2010, 2011, 2012, 2013, 2014

2013-04-19

... aircraft flight manual (AFM); performing operational tests of the oxygen mask oxygen assembly; and... prompted by failure of the flight crew oxygen supply due to a potentially defective flight crew mask oxygen assembly. We are issuing this AD to prevent failure to supply oxygen upon demand to the flight crew in...

Technique for improving solid state mosaic images

NASA Technical Reports Server (NTRS)

Saboe, J. M.

1969-01-01

Method identifies and corrects mosaic image faults in solid state visual displays and opto-electronic presentation systems. Composite video signals containing faults due to defective sensing elements are corrected by a memory unit that contains the stored fault pattern and supplies the appropriate fault word to the blanking circuit.

Overlay improvement by exposure map based mask registration optimization

NASA Astrophysics Data System (ADS)

Shi, Irene; Guo, Eric; Chen, Ming; Lu, Max; Li, Gordon; Li, Rivan; Tian, Eric

2015-03-01

Along with the increased miniaturization of semiconductor electronic devices, the design rules of advanced semiconductor devices shrink dramatically. [1] One of the main challenges of lithography step is the layer-to-layer overlay control. Furthermore, DPT (Double Patterning Technology) has been adapted for the advanced technology node like 28nm and 14nm, corresponding overlay budget becomes even tighter. [2][3] After the in-die mask registration (pattern placement) measurement is introduced, with the model analysis of a KLA SOV (sources of variation) tool, it's observed that registration difference between masks is a significant error source of wafer layer-to-layer overlay at 28nm process. [4][5] Mask registration optimization would highly improve wafer overlay performance accordingly. It was reported that a laser based registration control (RegC) process could be applied after the pattern generation or after pellicle mounting and allowed fine tuning of the mask registration. [6] In this paper we propose a novel method of mask registration correction, which can be applied before mask writing based on mask exposure map, considering the factors of mask chip layout, writing sequence, and pattern density distribution. Our experiment data show if pattern density on the mask keeps at a low level, in-die mask registration residue error in 3sigma could be always under 5nm whatever blank type and related writer POSCOR (position correction) file was applied; it proves random error induced by material or equipment would occupy relatively fixed error budget as an error source of mask registration. On the real production, comparing the mask registration difference through critical production layers, it could be revealed that registration residue error of line space layers with higher pattern density is always much larger than the one of contact hole layers with lower pattern density. Additionally, the mask registration difference between layers with similar pattern density could also achieve under 5nm performance. We assume mask registration excluding random error is mostly induced by charge accumulation during mask writing, which may be calculated from surrounding exposed pattern density. Multi-loading test mask registration result shows that with x direction writing sequence, mask registration behavior in x direction is mainly related to sequence direction, but mask registration in y direction would be highly impacted by pattern density distribution map. It proves part of mask registration error is due to charge issue from nearby environment. If exposure sequence is chip by chip for normal multi chip layout case, mask registration of both x and y direction would be impacted analogously, which has also been proved by real data. Therefore, we try to set up a simple model to predict the mask registration error based on mask exposure map, and correct it with the given POSCOR (position correction) file for advanced mask writing if needed.

Optical method and apparatus for detection of surface and near-subsurface defects in dense ceramics

DOEpatents

Ellingson, William A.; Brada, Mark P.

1995-01-01

A laser is used in a non-destructive manner to detect surface and near-subsurface defects in dense ceramics and particularly in ceramic bodies with complex shapes such as ceramic bearings, turbine blades, races, and the like. The laser's wavelength is selected based upon the composition of the ceramic sample and the laser can be directed on the sample while the sample is static or in dynamic rotate or translate motion. Light is scattered off surface and subsurface defects using a preselected polarization. The change in polarization angle is used to select the depth and characteristics of surface/subsurface defects. The scattered light is detected by an optical train consisting of a charge coupled device (CCD), or vidicon, television camera which, in turn, is coupled to a video monitor and a computer for digitizing the image. An analyzing polarizer in the optical train allows scattered light at a given polarization angle to be observed for enhancing sensitivity to either surface or near-subsurface defects. Application of digital image processing allows subtraction of digitized images in near real-time providing enhanced sensitivity to subsurface defects. Storing known "feature masks" of identified defects in the computer and comparing the detected scatter pattern (Fourier images) with the stored feature masks allows for automatic classification of detected defects.

Results from the first fully automated PBS-mask process and pelliclization

NASA Astrophysics Data System (ADS)

Oelmann, Andreas B.; Unger, Gerd M.

1994-02-01

Automation is widely discussed in IC- and mask-manufacturing and partially realized everywhere. The idea for the automation goes back to 1978, when it turned out that the operators for the then newly installed PBS-process-line (the first in Europe) should be trained to behave like robots for particle reduction gaining lower defect densities on the masks. More than this goal has been achieved. It turned out recently, that the automation with its dedicated work routes and detailed documentation of every lot (individual mask or reticle) made it easy to obtain the CEEC certificate which includes ISO 9001.

Chest wall reconstruction in a canine model using polydioxanone mesh, demineralized bone matrix and bone marrow stromal cells.

PubMed

Tang, Hua; Xu, Zhifei; Qin, Xiong; Wu, Bin; Wu, Lihui; Zhao, XueWei; Li, Yulin

2009-07-01

Extensive chest wall defect reconstruction remains a challenging problem for surgeons. In the past several years, little progress has been made in this area. In this study, a biodegradable polydioxanone (PDO) mesh and demineralized bone matrix (DBM) seeded with osteogenically induced bone marrow stromal cells (BMSCs) were used to reconstruct a 6 cm x 5.5 cm chest wall defect. Four experimental groups were evaluated (n=6 per group): polydioxanone (PDO) mesh/DBMs/BMSCs group, polydioxanone (PDO) mesh/DBMs group, polydioxanone (PDO) mesh group, and a blank group (no materials) in a canine model. All the animals survived except those in the blank group. In all groups receiving biomaterial implants, the polydioxanone (PDO) mesh completely degraded at 24 weeks and was replaced by fibrous tissue with thickness close to that of the normal intercostal tissue (P>0.05). In the polydioxanone (PDO) mesh/DBMs/BMSCs group, new bone formation and bone-union were observed by radiographic and histological examination. More importantly, the reconstructed rib could maintain its original radian and achieve satisfactory biomechanics close to normal ribs in terms of bending stress (P>0.05). However, in the other two groups, fibrous tissue was observed in the defect and junctions, and the reconstructed ribs were easily distorted under an outer force. Based on these results, a surgical approach utilizing biodegradable polydioxanone (PDO) mesh in combination with DBMs and BMSCs could repair the chest wall defect not only in function but also in structure.

L2-L1 Translation Priming Effects in a Lexical Decision Task: Evidence From Low Proficient Korean-English Bilinguals

PubMed Central

Lee, Yoonhyoung; Jang, Euna; Choi, Wonil

2018-01-01

One of the key issues in bilingual lexical representation is whether L1 processing is facilitated by L2 words. In this study, we conducted two experiments using the masked priming paradigm to examine how L2-L1 translation priming effects emerge when unbalanced, low proficiency, Korean-English bilinguals performed a lexical decision task. In Experiment 1, we used a 150 ms SOA (50 ms prime duration followed by a blank interval of 100 ms) and found a significant L2-L1 translation priming effect. In contrast, in Experiment 2, we used a 60 ms SOA (50 ms prime duration followed by a blank interval of 10 ms) and found a null effect of L2-L1 translation priming. This finding is the first demonstration of a significant L2-L1 translation priming effect with unbalanced Korean-English bilinguals. Implications of this work are discussed with regard to bilingual word recognition models. PMID:29599733

Alpha-band rhythm modulation under the condition of subliminal face presentation: MEG study.

PubMed

Sakuraba, Satoshi; Kobayashi, Hana; Sakai, Shinya; Yokosawa, Koichi

2013-01-01

The human brain has two streams to process visual information: a dorsal stream and a ventral stream. Negative potential N170 or its magnetic counterpart M170 is known as the face-specific signal originating from the ventral stream. It is possible to present a visual image unconsciously by using continuous flash suppression (CFS), which is a visual masking technique adopting binocular rivalry. In this work, magnetoencephalograms were recorded during presentation of the three invisible images: face images, which are processed by the ventral stream; tool images, which could be processed by the dorsal stream, and a blank image. Alpha-band activities detected by sensors that are sensitive to M170 were compared. The alpha-band rhythm was suppressed more during presentation of face images than during presentation of the blank image (p=.028). The suppression remained for about 1 s after ending presentations. However, no significant difference was observed between tool and other images. These results suggest that alpha-band rhythm can be modulated also by unconscious visual images.

Automatically high accurate and efficient photomask defects management solution for advanced lithography manufacture

NASA Astrophysics Data System (ADS)

Zhu, Jun; Chen, Lijun; Ma, Lantao; Li, Dejian; Jiang, Wei; Pan, Lihong; Shen, Huiting; Jia, Hongmin; Hsiang, Chingyun; Cheng, Guojie; Ling, Li; Chen, Shijie; Wang, Jun; Liao, Wenkui; Zhang, Gary

2014-04-01

Defect review is a time consuming job. Human error makes result inconsistent. The defects located on don't care area would not hurt the yield and no need to review them such as defects on dark area. However, critical area defects can impact yield dramatically and need more attention to review them such as defects on clear area. With decrease in integrated circuit dimensions, mask defects are always thousands detected during inspection even more. Traditional manual or simple classification approaches are unable to meet efficient and accuracy requirement. This paper focuses on automatic defect management and classification solution using image output of Lasertec inspection equipment and Anchor pattern centric image process technology. The number of mask defect found during an inspection is always in the range of thousands or even more. This system can handle large number defects with quick and accurate defect classification result. Our experiment includes Die to Die and Single Die modes. The classification accuracy can reach 87.4% and 93.3%. No critical or printable defects are missing in our test cases. The missing classification defects are 0.25% and 0.24% in Die to Die mode and Single Die mode. This kind of missing rate is encouraging and acceptable to apply on production line. The result can be output and reloaded back to inspection machine to have further review. This step helps users to validate some unsure defects with clear and magnification images when captured images can't provide enough information to make judgment. This system effectively reduces expensive inline defect review time. As a fully inline automated defect management solution, the system could be compatible with current inspection approach and integrated with optical simulation even scoring function and guide wafer level defect inspection.

Pre-implanted Sensory Nerve Could Enhance the Neurotization in Tissue-Engineered Bone Graft.

PubMed

Wu, Yan; Jing, Da; Ouyang, Hongwei; Li, Liang; Zhai, Mingming; Li, Yan; Bi, Long; Guoxian, Pei

2015-08-01

In our previous study, it was found that implanting the sensory nerve tract into the tissue-engineered bone to repair large bone defects can significantly result in better osteogenesis effect than tissue-engineered bone graft (TEBG) alone. To study the behavior of the preimplanted sensory nerve in the TEBG, the TEBG was constructed by seeding bone mesenchymal stem cells into β-tricalcium phosphate scaffold with (treatment group) or without (blank group) implantation of the sensory nerve. The expression of calcitonin gene-related peptide (CGRP), which helps in the healing of bone defect in the treatment group was significantly higher than the blank group at 4, 8, and 12 weeks. The expression of growth-associated protein 43 (GAP43), which might be expressed during nerve healing in the treatment group, was significantly higher than the blank group at 4 and 8 weeks. The nerve tracts of the preimplanted sensory nerve were found in the scaffold by the nerve tracing technique. The implanted sensory nerve tracts grew into the pores of scaffolds much earlier than the vascular. The implanted sensory nerve tracts traced by Dil could be observed at 4 weeks, but at the same time, no vascular was observed. In conclusion, the TEBG could be benefited from the preimplanted sensory nerve through the healing behavior of the sensory nerve. The sensory nerve fibers could grow into the pores of the TEBG rapidly, and increase the expression of CGRP, which is helpful in regulating the bone formation and the blood flow.

Accelerating yield ramp through design and manufacturing collaboration

NASA Astrophysics Data System (ADS)

Sarma, Robin C.; Dai, Huixiong; Smayling, Michael C.; Duane, Michael P.

2004-12-01

Ramping an integrated circuit from first silicon bring-up to production yield levels is a challenge for all semiconductor products on the path to profitable market entry. Two approaches to accelerating yield ramp are presented. The first is the use of laser mask writers for fast throughput, high yield, and cost effective pattern transfer. The second is the use of electrical test to find a defect and identify the physical region to probe in failure analysis that is most likely to uncover the root cause. This provides feedback to the design team on modifications to make to the design to avoid the yield issue in a future tape-out revision. Additionally, the process parameter responsible for the root cause of the defect is forward annotated through the design, mask and wafer coordinate systems so it can be monitored in-line on subsequent lots of the manufacturing run. This results in an improved recipe for the manufacturing equipment to potentially prevent the recurrence of the defect and raise yield levels on the following material. The test diagnostics approach is enabled by the seamless traceability of a feature across the design, photomask and wafer, made possible by a common data model for design, mask pattern generation and wafer fabrication.

[Experimental study of canine bone marrow mesenchymal stem cells combined with calcium phosphate cement for repair of mandibular bone defects in Beagle dogs].

PubMed

Hu, Yi-cheng; Liu, Xin; Shen, Ji-jia; He, Jia-cai; Chen, Qiao-er

2014-08-01

To evaluate the effects of bone marrow mesenchymal stem cells (BMSCs) combined with calcium phosphate cement (CPC) scaffold for repair of mandibular defect in Beagle dogs. BMSCs were isolated from Beagle dogs and cultured in DMEM plus 10% FBS. The induction effect was determined using alizarin red staining or alkaline phosphate staining at 14-day of culture. BMSCs were added to the CPC scaffold for animal experiments. In vivo, three critical size bone defects were surgically created in each side of the mandible. The bone defects were repaired with BMSCs-CPC (scaffolds with composite seeding cells), CPC (scaffold alone) or no materials (blank group). Two dogs were sacrificed at 4-week and 8-week after operation. Gross observation, X-ray imaging, histologic and histometric analyses were performed to evaluate the level of bone formation. Newly formed bones were detected within all defect sites after operation. The BMSCs-CPC group and CPC group showed increased bone formation compared with the blank group. The BMSCs-CPC group exhibited more bone formation and degradation of the material than the CPC group. The percentage of new bone in the BMSCs-CPC and CPC treated group were significantly higher than that in the control group (P<0.05), while the percentage of new bone in the BMSCs-CPC sites was higher than that in the CPC sites (P<0.01); the percentage of residual material in the BMSCs-CPC sites was lower than that in the CPC sites (P<0.01) 4 weeks and 8 weeks after operation. Using the theory of tissue engineering, BMSCs composite CPC compound is an effective method in promoting new bone regeneration, which has a positive influence on the bone space preservation.

DFM for maskmaking: design-aware flexible mask-defect analysis

NASA Astrophysics Data System (ADS)

Driessen, Frank A. J. M.; Westra, J.; Scheffer, M.; Kawakami, K.; Tsujimoto, E.; Yamaji, M.; Kawashima, T.; Hayashi, N.

2007-10-01

We present a novel software system that combines design intent as known by EDA designers with defect inspection results from the maskshop to analyze the severity of defects on photomasks. The software -named Takumi Design- Driven Defect Analyzer (TK-D3A)- analyzes defects by combining actions in the image domain with actions in the design domain and outputs amongst others flexible mask-repair decisions in production formats used by the maskshop. Furthermore, TK-D3A outputs clips of layout (GDS/OASIS) that can be viewed with its graphical user interface for easy review of the defects and associated repair decisions. As inputs the system uses reticle defect-inspection data (text and images) and the respective multi-layer design layouts with the definitions of criticalities. The system does not require confidential design data from IDM, Fabless Design House, or Foundry to be sent to the maskshop and it also has minimal impact on the maskshop's mode of operation. The output of TK-D3A is designed to realize value to the maskshop and its customers in the forms of: 1) improved yield, 2) reduction of delivery times of masks to customers, and 3) enhanced utilization of the maskshop's installed tool base. The system was qualified together with a major IDM on a large set of production reticles in the 90 and beyond-65 nm technology nodes of which results will be presented that show the benefits for maskmaking. The accuracy in detecting defects is extremely high. We show the system's capability to analyze defects well below the pixel resolution of all inspection tools used, as well as the capability to extract multiple types of transmission defects. All of these defects are analyzed design-criticality-aware by TK-D3A, resulting in a large fraction of defects that do not need to be repaired because they are located in non-critical or less-critical parts of the layout, or, more importantly, turn out to be repairable or negligible despite of originally being classified as unrepairable when no such criticality knowledge is used. Finally, we show that the runtimes of TK-D3A are relatively short, despite the fact that the system operates on full-chip designs.

Optical method and apparatus for detection of surface and near-subsurface defects in dense ceramics

DOEpatents

Ellingson, W.A.; Brada, M.P.

1995-06-20

A laser is used in a non-destructive manner to detect surface and near-subsurface defects in dense ceramics and particularly in ceramic bodies with complex shapes such as ceramic bearings, turbine blades, races, and the like. The laser`s wavelength is selected based upon the composition of the ceramic sample and the laser can be directed on the sample while the sample is static or in dynamic rotate or translate motion. Light is scattered off surface and subsurface defects using a preselected polarization. The change in polarization angle is used to select the depth and characteristics of surface/subsurface defects. The scattered light is detected by an optical train consisting of a charge coupled device (CCD), or vidicon, television camera which, in turn, is coupled to a video monitor and a computer for digitizing the image. An analyzing polarizer in the optical train allows scattered light at a given polarization angle to be observed for enhancing sensitivity to either surface or near-subsurface defects. Application of digital image processing allows subtraction of digitized images in near real-time providing enhanced sensitivity to subsurface defects. Storing known ``feature masks`` of identified defects in the computer and comparing the detected scatter pattern (Fourier images) with the stored feature masks allows for automatic classification of detected defects. 29 figs.

Revisiting adoption of high transmission PSM: pros, cons and path forward

NASA Astrophysics Data System (ADS)

Ma, Z. Mark; McDonald, Steve; Progler, Chris

2009-12-01

High transmission attenuated phase shift masks (Hi-T PSM) have been successfully applied in volume manufacturing for certain memory devices. Moreover, numerous studies have shown the potential benefits of Hi-T PSM for specific lithography applications. In this paper, the potential for extending Hi-T PSM to logic devices, is revisited with an emphasis on understanding layout, transmission, and manufacturing of Hi-T PSM versus traditional 6% embedded attenuated phase shift mask (EAPSM). Simulations on various layouts show Hi-T PSM has advantage over EAPSM in low duty cycle line patterns and high duty cycle space patterns. The overall process window can be enhanced when Hi- T PSM is combined with optimized optical proximity correction (OPC), sub-resolution assist features (SRAF), and source illumination. Therefore, Hi-T PSM may be a viable and lower cost alternative to other complex resolution enhancement technology (RET) approaches. Aerial image measurement system (AIMS) results on test masks, based on an inverse lithography technology (ILT) generated layout, confirm the simulation results. New advancement in high transmission blanks also make low topography Hi-T PSM a reality, which can minimize scattering effects in high NA lithography.

Automated reticle inspection data analysis for wafer fabs

NASA Astrophysics Data System (ADS)

Summers, Derek; Chen, Gong; Reese, Bryan; Hutchinson, Trent; Liesching, Marcus; Ying, Hai; Dover, Russell

2009-04-01

To minimize potential wafer yield loss due to mask defects, most wafer fabs implement some form of reticle inspection system to monitor photomask quality in high-volume wafer manufacturing environments. Traditionally, experienced operators review reticle defects found by an inspection tool and then manually classify each defect as 'pass, warn, or fail' based on its size and location. However, in the event reticle defects are suspected of causing repeating wafer defects on a completed wafer, potential defects on all associated reticles must be manually searched on a layer-by-layer basis in an effort to identify the reticle responsible for the wafer yield loss. This 'problem reticle' search process is a very tedious and time-consuming task and may cause extended manufacturing line-down situations. Often times, Process Engineers and other team members need to manually investigate several reticle inspection reports to determine if yield loss can be tied to a specific layer. Because of the very nature of this detailed work, calculation errors may occur resulting in an incorrect root cause analysis effort. These delays waste valuable resources that could be spent working on other more productive activities. This paper examines an automated software solution for converting KLA-Tencor reticle inspection defect maps into a format compatible with KLA-Tencor's Klarity Defect(R) data analysis database. The objective is to use the graphical charting capabilities of Klarity Defect to reveal a clearer understanding of defect trends for individual reticle layers or entire mask sets. Automated analysis features include reticle defect count trend analysis and potentially stacking reticle defect maps for signature analysis against wafer inspection defect data. Other possible benefits include optimizing reticle inspection sample plans in an effort to support "lean manufacturing" initiatives for wafer fabs.

Automated reticle inspection data analysis for wafer fabs

NASA Astrophysics Data System (ADS)

Summers, Derek; Chen, Gong; Reese, Bryan; Hutchinson, Trent; Liesching, Marcus; Ying, Hai; Dover, Russell

2009-03-01

To minimize potential wafer yield loss due to mask defects, most wafer fabs implement some form of reticle inspection system to monitor photomask quality in high-volume wafer manufacturing environments. Traditionally, experienced operators review reticle defects found by an inspection tool and then manually classify each defect as 'pass, warn, or fail' based on its size and location. However, in the event reticle defects are suspected of causing repeating wafer defects on a completed wafer, potential defects on all associated reticles must be manually searched on a layer-by-layer basis in an effort to identify the reticle responsible for the wafer yield loss. This 'problem reticle' search process is a very tedious and time-consuming task and may cause extended manufacturing line-down situations. Often times, Process Engineers and other team members need to manually investigate several reticle inspection reports to determine if yield loss can be tied to a specific layer. Because of the very nature of this detailed work, calculation errors may occur resulting in an incorrect root cause analysis effort. These delays waste valuable resources that could be spent working on other more productive activities. This paper examines an automated software solution for converting KLA-Tencor reticle inspection defect maps into a format compatible with KLA-Tencor's Klarity DefectTM data analysis database. The objective is to use the graphical charting capabilities of Klarity Defect to reveal a clearer understanding of defect trends for individual reticle layers or entire mask sets. Automated analysis features include reticle defect count trend analysis and potentially stacking reticle defect maps for signature analysis against wafer inspection defect data. Other possible benefits include optimizing reticle inspection sample plans in an effort to support "lean manufacturing" initiatives for wafer fabs.

Ways to Improve the Quality of Die Steel 5KhNM

NASA Astrophysics Data System (ADS)

Efimov, S. V.; Malykhina, O. Yu; Pavlova, A. G.; Milyuts, V. G.; Tsukanov, V. V.; Vikharev, V. V.

2017-12-01

There was performed an analysis of influence of the deoxidation technology, hydrogen content and high concentration of titanium in steel 5KhNM (Rus. “5XHM”) on quality of die blanks, evaluated based on the results of the ultrasonic test. The fractographic examinations of fractures and the X-ray microprobe analysis of chemical composition of non-metallic inclusions were conducted, the evaluation of macro- and micro-structure of a die blank with high titanium content was performed. It is demonstrated that defects of dies from steel 5KhNM (Rus. “5XHM”) are cracks from merged flakes and micro-flakes; in most cases large concentrations of sulphides appeared to be hydrogen collectors for formation of flakes and micro-flakes.

Fabrication of coronagraph masks and laboratory scale star-shade masks: characteristics, defects, and performance

NASA Astrophysics Data System (ADS)

Balasubramanian, Kunjithapatham; Riggs, A. J. Eldorado; Cady, Eric; White, Victor; Yee, Karl; Wilson, Daniel; Echternach, Pierre; Muller, Richard; Mejia Prada, Camilo; Seo, Byoung-Joon; Shi, Fang; Ryan, Daniel; Fregoso, Santos; Metzman, Jacob; Wilson, Robert Casey

2017-09-01

NASA WFIRST mission has planned to include a coronagraph instrument to find and characterize exoplanets. Masks are needed to suppress the host star light to better than 10-8 - 10-9 level contrast over a broad bandwidth to enable the coronagraph mission objectives. Such masks for high contrast coronagraphic imaging require various fabrication technologies to meet a wide range of specifications, including precise shapes, micron scale island features, ultra-low reflectivity regions, uniformity, wave front quality, etc. We present the technologies employed at JPL to produce these pupil plane and image plane coronagraph masks, and lab-scale external occulter masks, highlighting accomplishments from the high contrast imaging testbed (HCIT) at JPL and from the high contrast imaging lab (HCIL) at Princeton University. Inherent systematic and random errors in fabrication and their impact on coronagraph performance are discussed with model predictions and measurements.

Cluster tool solution for fabrication and qualification of advanced photomasks

NASA Astrophysics Data System (ADS)

Schaetz, Thomas; Hartmann, Hans; Peter, Kai; Lalanne, Frederic P.; Maurin, Olivier; Baracchi, Emanuele; Miramond, Corinne; Brueck, Hans-Juergen; Scheuring, Gerd; Engel, Thomas; Eran, Yair; Sommer, Karl

2000-07-01

The reduction of wavelength in optical lithography, phase shift technology and optical proximity correction (OPC), requires a rapid increase in cost effective qualification of photomasks. The knowledge about CD variation, loss of pattern fidelity especially for OPC pattern and mask defects concerning the impact on wafer level is becoming a key issue for mask quality assessment. As part of the European Community supported ESPRIT projection 'Q-CAP', a new cluster concept has been developed, which allows the combination of hardware tools as well as software tools via network communication. It is designed to be open for any tool manufacturer and mask hose. The bi-directional network access allows the exchange of all relevant mask data including grayscale images, measurement results, lithography parameters, defect coordinates, layout data, process data etc. and its storage to a SQL database. The system uses SEMI format descriptions as well as standard network hardware and software components for the client server communication. Each tool is used mainly to perform its specific application without using expensive time to perform optional analysis, but the availability of the database allows each component to share the full data ste gathered by all components. Therefore, the cluster can be considered as one single virtual tool. The paper shows the advantage of the cluster approach, the benefits of the tools linked together already, and a vision of a mask house in the near future.

Alternating phase-shifting masks: phase determination and impact of quartz defects--theoretical and experimental results

NASA Astrophysics Data System (ADS)

Griesinger, Uwe A.; Dettmann, Wolfgang; Hennig, Mario; Heumann, Jan P.; Koehle, Roderick; Ludwig, Ralf; Verbeek, Martin; Zarrabian, Mardjan

2002-07-01

In optical lithography balancing the aerial image of an alternating phase shifting mask (alt. PSM) is a major challenge. For the exposure wavelengths (currently 248nm and 193nm) an optimum etching method is necessary to overcome imbalance effects. Defects play an important role in the imbalances of the aerial image. In this contribution defects will be discussed by using the methodology of global phase imbalance control also for local imbalances which are a result of quartz defects. The effective phase error can be determined with an AIMS-system by measuring the CD width between the images of deep- and shallow trenches at different focus settings. The AIMS results are analyzed in comparison to the simulated and lithographic print results of the alternating structures. For the analysis of local aerial image imbalances it is necessary to investigate the capability of detecting these phase defects with state of the art inspection systems. Alternating PSMs containing programmed defects were inspected with different algorithms to investigate the capture rate of special phase defects in dependence on the defect size. Besides inspection also repair of phase defects is an important task. In this contribution we show the effect of repair on the optical behavior of phase defects. Due to the limited accuracy of the repair tools the repaired area still shows a certain local phase error. This error can be caused either by residual quartz material or a substrate damage. The influence of such repair induced phase errors on the aerial image were investigated.

To repair or not to repair: with FAVOR there is no question

NASA Astrophysics Data System (ADS)

Garetto, Anthony; Schulz, Kristian; Tabbone, Gilles; Himmelhaus, Michael; Scheruebl, Thomas

2016-10-01

In the mask shop the challenges associated with today's advanced technology nodes, both technical and economic, are becoming increasingly difficult. The constant drive to continue shrinking features means more masks per device, smaller manufacturing tolerances and more complexity along the manufacturing line with respect to the number of manufacturing steps required. Furthermore, the extremely competitive nature of the industry makes it critical for mask shops to optimize asset utilization and processes in order to maximize their competitive advantage and, in the end, profitability. Full maximization of profitability in such a complex and technologically sophisticated environment simply cannot be achieved without the use of smart automation. Smart automation allows productivity to be maximized through better asset utilization and process optimization. Reliability is improved through the minimization of manual interactions leading to fewer human error contributions and a more efficient manufacturing line. In addition to these improvements in productivity and reliability, extra value can be added through the collection and cross-verification of data from multiple sources which provides more information about our products and processes. When it comes to handling mask defects, for instance, the process consists largely of time consuming manual interactions that are error prone and often require quick decisions from operators and engineers who are under pressure. The handling of defects itself is a multiple step process consisting of several iterations of inspection, disposition, repair, review and cleaning steps. Smaller manufacturing tolerances and features with higher complexity contribute to a higher number of defects which must be handled as well as a higher level of complexity. In this paper the recent efforts undertaken by ZEISS to provide solutions which address these challenges, particularly those associated with defectivity, will be presented. From automation of aerial image analysis to the use of data driven decision making to predict and propose the optimized back end of line process flow, productivity and reliability improvements are targeted by smart automation. Additionally the generation of the ideal aerial image from the design and several repair enhancement features offer additional capabilities to improve the efficiency and yield associated with defect handling.

SEM AutoAnalysis: enhancing photomask and NIL defect disposition and review

NASA Astrophysics Data System (ADS)

Schulz, Kristian; Egodage, Kokila; Tabbone, Gilles; Ehrlich, Christian; Garetto, Anthony

2017-06-01

For defect disposition and repair verification regarding printability, AIMS™ is the state of the art measurement tool in industry. With its unique capability of capturing aerial images of photomasks it is the one method that comes closest to emulating the printing behaviour of a scanner. However for nanoimprint lithography (NIL) templates aerial images cannot be applied to evaluate the success of a repair process. Hence, for NIL defect dispositioning scanning, electron microscopy (SEM) imaging is the method of choice. In addition, it has been a standard imaging method for further root cause analysis of defects and defect review on optical photomasks which enables 2D or even 3D mask profiling at high resolutions. In recent years a trend observed in mask shops has been the automation of processes that traditionally were driven by operators. This of course has brought many advantages one of which is freeing cost intensive labour from conducting repetitive and tedious work. Furthermore, it reduces variability in processes due to different operator skill and experience levels which at the end contributes to eliminating the human factor. Taking these factors into consideration, one of the software based solutions available under the FAVOR® brand to support customer needs is the aerial image evaluation software, AIMS™ AutoAnalysis (AAA). It provides fully automated analysis of AIMS™ images and runs in parallel to measurements. This is enabled by its direct connection and communication with the AIMS™tools. As one of many positive outcomes, generating automated result reports is facilitated, standardizing the mask manufacturing workflow. Today, AAA has been successfully introduced into production at multiple customers and is supporting the workflow as described above. These trends indeed have triggered the demand for similar automation with respect to SEM measurements leading to the development of SEM AutoAnalysis (SAA). It aims towards a fully automated SEM image evaluation process utilizing a completely different algorithm due to the different nature of SEM images and aerial images. Both AAA and SAA are the building blocks towards an image evaluation suite in the mask shop industry.

Automated reticle inspection data analysis for wafer fabs

NASA Astrophysics Data System (ADS)

Summers, Derek; Chen, Gong; Reese, Bryan; Hutchinson, Trent; Liesching, Marcus; Ying, Hai; Dover, Russell

2008-10-01

To minimize potential wafer yield loss due to mask defects, most wafer fabs implement some form of reticle inspection system to monitor photomask quality in high-volume wafer manufacturing environments. Traditionally, experienced operators review reticle defects found by an inspection tool and then manually classify each defect as 'pass, warn, or fail' based on its size and location. However, in the event reticle defects are suspected of causing repeating wafer defects on a completed wafer, potential defects on all associated reticles must be manually searched on a layer-by-layer basis in an effort to identify the reticle responsible for the wafer yield loss. This 'problem reticle' search process is a very tedious and time-consuming task and may cause extended manufacturing line-down situations. Often times, Process Engineers and other team members need to manually investigate several reticle inspection reports to determine if yield loss can be tied to a specific layer. Because of the very nature of this detailed work, calculation errors may occur resulting in an incorrect root cause analysis effort. These delays waste valuable resources that could be spent working on other more productive activities. This paper examines an automated software solution for converting KLA-Tencor reticle inspection defect maps into a format compatible with KLA-Tencor's Klarity DefecTM data analysis database. The objective is to use the graphical charting capabilities of Klarity Defect to reveal a clearer understanding of defect trends for individual reticle layers or entire mask sets. Automated analysis features include reticle defect count trend analysis and potentially stacking reticle defect maps for signature analysis against wafer inspection defect data. Other possible benefits include optimizing reticle inspection sample plans in an effort to support "lean manufacturing" initiatives for wafer fabs.

Proceedings of the ARPA/AFML Review of Progress in Quantitative Nondestructive Evaluation

DTIC Science & Technology

1978-05-01

seeded with Fe, Si , SIC, low density SI3N4, C and pores in sizes ranging from 125 to 1000 ^m (0.005 to 0.040 Inches) as shown in the margins. Figure...are some blank areas where seeded defects are supposed to be, partic- ularly for the low density SI3N4 and the smallest size of SI and SIC, there 1s...shear wave Inspections of a seeded billet of NC-132, hot pressed silicon nitride. In this case the seeded defects are WC, Fe, BN, SIC, Si and C

Dynamic mask for producing uniform or graded-thickness thin films

DOEpatents

Folta, James A [Livermore, CA

2006-06-13

A method for producing single layer or multilayer films with high thickness uniformity or thickness gradients. The method utilizes a moving mask which blocks some of the flux from a sputter target or evaporation source before it deposits on a substrate. The velocity and position of the mask is computer controlled to precisely tailor the film thickness distribution. The method is applicable to any type of vapor deposition system, but is particularly useful for ion beam sputter deposition and evaporation deposition; and enables a high degree of uniformity for ion beam deposition, even for near-normal incidence of deposition species, which may be critical for producing low-defect multilayer coatings, such as required for masks for extreme ultraviolet lithography (EUVL). The mask can have a variety of shapes, from a simple solid paddle shape to a larger mask with a shaped hole through which the flux passes. The motion of the mask can be linear or rotational, and the mask can be moved to make single or multiple passes in front of the substrate per layer, and can pass completely or partially across the substrate.

Assessment of molecular contamination in mask pod

NASA Astrophysics Data System (ADS)

Foray, Jean Marie; Dejaune, Patrice; Sergent, Pierre; Gough, Stuart; Cheung, D.; Davenet, Magali; Favre, Arnaud; Rude, C.; Trautmann, T.; Tissier, Michel; Fontaine, H.; Veillerot, M.; Avary, K.; Hollein, I.; Lerit, R.

2008-04-01

Context/ study Motivation: Contamination and especially Airbone Molecular Contamination (AMC) is a critical issue for mask material flow with a severe and fairly unpredictable risk of induced contamination and damages especially for 193 nm lithography. It is therefore essential to measure, to understand and then try to reduce AMC in mask environment. Mask material flow was studied in a global approach by a pool of European partners, especially within the frame of European MEDEA+ project, so called "MUSCLE". This paper deals with results and assessment of mask pod environment in term of molecular contamination in a first step, then in a second step preliminary studies to reduce mask pod influence and contamination due to material out gassing. Approach and techniques: A specific assessment of environmental / molecular contamination along the supply chain was performed by all partners. After previous work presented at EMLC 07, further studies were performed on real time contamination measurement pod at different sites locations (including Mask manufacturing site, blank manufacturing sites, IC fab). Studies were linked to the main critical issues: cleaning, storage, handling, materials and processes. Contamination measurement campaigns were carried out along the mask supply chain using specific Adixen analyzer in order to monitor in real time organic contaminants (ppb level) in mask pods. Key results would be presented: VOC, AMC and humidity level on different kinds of mask carriers, impact of basic cleaning on pod outgassing measurement (VOC, NH3), and process influence on pod contamination... In a second step, preliminary specific pod conditioning studies for better pod environment were performed based on Adixen vacuum process. Process influence had been experimentally measured in term of molecular outgassing from mask pods. Different AMC experimental characterization methods had been carried out leading to results on a wide range of organic and inorganic contaminants: by inline techniques based on Adixen humidity, also VOC and organic sensors, together by off-line techniques already used in the extensive previous mask pods benchmark (TD-GCMS & Ionic Chromatography). Humidity and VOC levels from mask carriers had shown significant reduction after Adixen pod conditioning process. Focus had been made on optimized vacuum step (for AMC) after particles carrier cleaning cycle. Based upon these key results new procedures, as well as guidelines for mask carrier cleaning optimization are proposed to improve pod contamination control. Summary results/next steps: This paper reports molecular contamination measurement campaigns performed by a pool of European partners along the mask supply chain. It allows us to investigate, identify and quantify critical molecular contamination in mask pod, as well as VOC and humidity, issues depending on locations, uses, and carrier's type. Preliminary studies highlight initial process solutions for pods conditioning that are being used for short term industrialization and further industrialized.

Procedures for dealing with certain types of noise and systematic errors common to many Hadamard transform optical systems

NASA Technical Reports Server (NTRS)

Harwit, M.

1977-01-01

Sources of noise and error correcting procedures characteristic of Hadamard transform optical systems were investigated. Reduction of spectral noise due to noise spikes in the data, the effect of random errors, the relative performance of Fourier and Hadamard transform spectrometers operated under identical detector-noise-limited conditions, and systematic means for dealing with mask defects are among the topics discussed. The distortion in Hadamard transform optical instruments caused by moving Masks, incorrect mask alignment, missing measurements, and diffraction is analyzed and techniques for reducing or eliminating this distortion are described.

Designs and Materials for Better Coronagraph Occulting Masks

NASA Technical Reports Server (NTRS)

Balasubramanian, Kunjithapatham

2010-01-01

New designs, and materials appropriate for such designs, are under investigation in an effort to develop coronagraph occulting masks having broad-band spectral characteristics superior to those currently employed. These designs and materials are applicable to all coronagraphs, both ground-based and spaceborne. This effort also offers potential benefits for the development of other optical masks and filters that are required (1) for precisely tailored spatial transmission profiles, (2) to be characterized by optical-density neutrality and phase neutrality (that is, to be characterized by constant optical density and constant phase over broad wavelength ranges), and/or (3) not to exhibit optical- density-dependent phase shifts. The need for this effort arises for the following reasons: Coronagraph occulting masks are required to impose, on beams of light transmitted through them, extremely precise control of amplitude and phase according to carefully designed transmission profiles. In the original application that gave rise to this effort, the concern has been to develop broad-band occulting masks for NASA s Terrestrial Planet Finder coronagraph. Until now, experimental samples of these masks have been made from high-energy-beam-sensitive (HEBS) glass, which becomes locally dark where irradiated with a high-energy electron beam, the amount of darkening depending on the electron-beam energy and dose. Precise mask profiles have been written on HEBS glass blanks by use of electron beams, and the masks have performed satisfactorily in monochromatic light. However, the optical-density and phase profiles of the HEBS masks vary significantly with wavelength; consequently, the HEBS masks perform unsatisfactorily in broad-band light. The key properties of materials to be used in coronagraph occulting masks are their extinction coefficients, their indices of refraction, and the variations of these parameters with wavelength. The effort thus far has included theoretical predictions of performances of masks that would be made from alternative materials chosen because the wavelength dependences of their extinction coefficients and their indices of refraction are such that that the optical-density and phase profiles of masks made from these materials can be expected to vary much less with wavelength than do those of masks made from HEBS glass. The alternative materials considered thus far include some elemental metals such as Pt and Ni, metal alloys such as Inconel, metal nitrides such as TiN, and dielectrics such as SiO2. A mask as now envisioned would include thin metal and dielectric films having stepped or smoothly varying thicknesses (see figure). The thicknesses would be chosen, taking account of the indices of refraction and extinction coefficients, to obtain an acceptably close approximation of the desired spatial transmittance profile with a flat phase profile

Study of residue type defect formation mechanism and the effect of advanced defect reduction (ADR) rinse process

NASA Astrophysics Data System (ADS)

Arima, Hiroshi; Yoshida, Yuichi; Yoshihara, Kosuke; Shibata, Tsuyoshi; Kushida, Yuki; Nakagawa, Hiroki; Nishimura, Yukio; Yamaguchi, Yoshikazu

2009-03-01

Residue type defect is one of yield detractors in lithography process. It is known that occurrence of the residue type defect is dependent on resist development process and the defect is reduced by optimized rinsing condition. However, the defect formation is affected by resist materials and substrate conditions. Therefore, it is necessary to optimize the development process condition by each mask level. Those optimization steps require a large amount of time and effort. The formation mechanism is investigated from viewpoint of both material and process. The defect formation is affected by resist material types, substrate condition and development process condition (D.I.W. rinse step). Optimized resist formulation and new rinse technology significantly reduce the residue type defect.

[Subchondral drilling method combined with gum-bletilla complex to repair articular cartilage defects].

PubMed

Huang, Yong; Wang, Xin-Ling; Qiu, Heng; Xiao, Yi-Cheng; Wu, Zong-Hong; Xu, Jian

2018-02-01

Two types(A model and B model) of articular cartilage defect models were prepared by using adult New Zealand white rabbits. A model group was applied by drilling without through subchondral bone, whose right joint was repaired by composite scaffolds made by seed cell, gum-bletilla as well as Pluronic F-127, and left side was blank control. B model group was applied by subchondral drilling method, whose right joint was repaired by using composite scaffolds made by gum-bletilla and Pluronic F-127 without seed cells, and left side was blank control. Autogenous contrast was used in both model types. In addition, another group was applied with B model type rabbits, which was repaired with artificial complex material of Pluronic F-127 in both joint sides. 4, 12 and 24 weeks after operation, the animals were sacrificed and the samples were collected from repaired area for staining with HE, typeⅡcollagen immunohistochemical method, Alcian blue, and toluidine blue, and then were observed with optical microscope. Semi-quantitative scores were graded by referring to Wakitanis histological scoring standard to investigate the histomorphology of repaired tissue. Hyaline cartilage repairing was achieved in both Group A and Group B, with satisfactory results. There were no significant differences on repairing effects for articular cartilage defects between composite scaffolds made by seed cell, gum-bletilla and Pluronic F-127, and the composite scaffolds made by gum-bletilla and Pluronic F-127 without seed cell. Better repairing effects for articular cartilage defects were observed in groups with use of gum-bletilla, indicating that gum-bletilla is a vital part in composite scaffolds material. Copyright© by the Chinese Pharmaceutical Association.

Mask pattern generator employing EPL technology

NASA Astrophysics Data System (ADS)

Yoshioka, Nobuyuki; Yamabe, Masaki; Wakamiya, Wataru; Endo, Nobuhiro

2003-08-01

Mask cost is one of crucial issues in device fabrication, especially in SoC (System on a Chip) with small-volume production. The cost mainly depends on productivity of mask manufacturing tools such as mask writers and defect inspection tools. EPL (Electron Projection Lithography) has been developing as a high-throughput electron beam exposure technology that will succeed optical lithography. The application of EPL technology to mask writing will result in high productivity and contribute to decrease the mask cost. The concept of a mask pattern generator employing EPL technology is proposed in this paper. It is very similar to EPL technology used for pattern printing on a wafer. The mask patterns on the glass substrate are exposed by projecting the basic circuit patterns formed on the mother EPL mask. One example of the mother EPL mask is a stencil type made with 200-mm Si wafer. The basic circuit patterns are IP patterns and logical primitive patterns such as cell libraries (AND, OR, Inverter, Flip-Flop and etc.) to express the SoC device patterns. Since the SoC patterns are exposed with its collective units such as IP and logical primitive patterns by using this method, the high throughput will be expected comparing with conventional mask E-beam writers. In this paper, the mask pattern generator with the EPL technology is proposed. The concept, its advantages and issues to be solved are discussed.

Alternating phase-shifted mask for logic gate levels, design, and mask manufacturing

NASA Astrophysics Data System (ADS)

Liebmann, Lars W.; Graur, Ioana C.; Leipold, William C.; Oberschmidt, James M.; O'Grady, David S.; Regaill, Denis

1999-07-01

While the benefits of alternating phase shifted masks in improving lithographic process windows at increased resolution are well known throughout the lithography community, broad implementation of this potentially powerful technique has been slow due to the inherent complexity of the layout design and mask manufacturing process. This paper will review a project undertaken at IBM's Semiconductor Research and Development Center and Mask Manufacturing and Development facility to understand the technical and logistical issues associated with the application of alternating phase shifted mask technology to the gate level of a full microprocessor chip. The work presented here depicts an important milestone toward integration of alternating phase shifted masks into the manufacturing process by demonstrating an automated design solution and yielding a functional alternating phase shifted mask. The design conversion of the microprocessor gate level to a conjugate twin shifter alternating phase shift layout was accomplished with IBM's internal design system that automatically scaled the design, added required phase regions, and resolved phase conflicts. The subsequent fabrication of a nearly defect free phase shifted mask, as verified by SEM based die to die inspection, highlights the maturity of the alternating phase shifted mask manufacturing process in IBM's internal mask facility. Well defined and recognized challenges in mask inspection and repair remain and the layout of alternating phase shifted masks present a design and data preparation overhead, but the data presented here demonstrate the feasibility of designing and building manufacturing quality alternating phase shifted masks for the gate level of a microprocessor.

Preparation of porous PLA/DBM composite biomaterials and experimental research of repair rabbit radius segmental bone defect.

PubMed

Zhang, Yumin; Wang, Jianru; Wang, Jue; Niu, Xiaojun; Liu, Jianchun; Gao, Lan; Zhai, Xiaoyan; Chu, Kaibo

2015-12-01

Bone substitutes are used in wide range of orthopaedic application. An ideal bone substitute should exhibit superior osteoinductive and osteoconductive properties. Neither bio-derived materials nor synthetic materials can meet the needs of an ideal bone substitute. Preparation of composite materials is a promising way to improve properties of biomaterial. In this study, the porous poly lactic acid (PLA)/demineralized bone matrix (DBM) composite biomaterials prepared by supercritical CO2 technique were implanted to repair rabbit radius segmental bone defect. By comparing with PLA and bone autograft, the X-ray result and histological analysis showed the repair effect of PLA/DBM porous composite materials is significantly better than that of the PLA group and the blank control group, and is similar to autologous bone. The PLA/DBM can promote the healing of bone defects and can be used as a kind of ideal alternative materials to repair bone defects.

Automated imprint mask cleaning for step-and-flash imprint lithography

NASA Astrophysics Data System (ADS)

Singh, Sherjang; Chen, Ssuwei; Selinidis, Kosta; Fletcher, Brian; McMackin, Ian; Thompson, Ecron; Resnick, Douglas J.; Dress, Peter; Dietze, Uwe

2009-03-01

Step-and-Flash Imprint Lithography (S-FIL) is a promising lithography strategy for semiconductor manufacturing at device nodes below 32nm. The S-FIL 1:1 pattern transfer technology utilizes a field-by-field ink jet dispense of a low viscosity liquid resist to fill the relief pattern of the device layer etched into the glass mask. Compared to other sub 40nm CD lithography methods, the resulting high resolution, high throughput through clustering, 3D patterning capability, low process complexity, and low cost of ownership (CoO) of S-FIL makes it a widely accepted technology for patterned media as well as a promising mainstream option for future CMOS applications. Preservation of mask cleanliness is essential to avoid risk of repeated printing of defects. The development of mask cleaning processes capable of removing particles adhered to the mask surface without damaging the mask is critical to meet high volume manufacturing requirements. In this paper we have presented various methods of residual (cross-linked) resist removal and final imprint mask cleaning demonstrated on the HamaTech MaskTrack automated mask cleaning system. Conventional and non-conventional (acid free) methods of particle removal have been compared and the effect of mask cleaning on pattern damage and CD integrity is also studied.

Epitaxial lateral overgrowth of InP on Si from nano-openings: Theoretical and experimental indication for defect filtering throughout the grown layer

NASA Astrophysics Data System (ADS)

Olsson, F.; Xie, M.; Lourdudoss, S.; Prieto, I.; Postigo, P. A.

2008-11-01

We present a model for the filtration of dislocations inside the seed window in epitaxial lateral overgrowth (ELO). We found that, when the additive effects of image and gliding forces exceed the defect line tension force, filtering can occur even in the openings. The model is applied to ELO of InP on Si where the opening size and the thermal stress arising due to the mask and the grown material are taken into account and analyzed. Further, we have also designed the mask patterns in net structures, where the tilting angles of the openings in the nets are chosen in order to take advantage of the filtering in the openings more effectively, and to minimize new defects due to coalescence in the ELO. Photoluminescence intensities of ELO InP on Si and on InP are compared and found to be in qualitative agreement with the model.

Scatterometry on pelliclized masks: an option for wafer fabs

NASA Astrophysics Data System (ADS)

Gallagher, Emily; Benson, Craig; Higuchi, Masaru; Okumoto, Yasuhiro; Kwon, Michael; Yedur, Sanjay; Li, Shifang; Lee, Sangbong; Tabet, Milad

2007-03-01

Optical scatterometry-based metrology is now widely used in wafer fabs for lithography, etch, and CMP applications. This acceptance of a new metrology method occurred despite the abundance of wellestablished CD-SEM and AFM methods. It was driven by the desire to make measurements faster and with a lower cost of ownership. Over the last year, scatterometry has also been introduced in advanced mask shops for mask measurements. Binary and phase shift masks have been successfully measured at all desired points during photomask production before the pellicle is mounted. There is a significant benefit to measuring masks with the pellicle in place. From the wafer fab's perspective, through-pellicle metrology would verify mask effects on the same features that are characterized on wafer. On-site mask verification would enable quality control and trouble-shooting without returning the mask to a mask house. Another potential application is monitoring changes to mask films once the mask has been delivered to the fab (haze, oxide growth, etc.). Similar opportunities apply to the mask metrologist receiving line returns from a wafer fab. The ability to make line-return measurements without risking defect introduction is clearly attractive. This paper will evaluate the feasibility of collecting scatterometry data on pelliclized masks. We explore the effects of several different pellicle types on scatterometry measurements made with broadband light in the range of 320-780 nm. The complexity introduced by the pellicles' optical behavior will be studied.

Imaging Gallium Nitride High Electron Mobility Transistors to Identify Point Defects

DTIC Science & Technology

2014-03-01

streamline the sample preparation procedure to maximize the yield of successful samples to be analyzed chemically in an energy dispersive spectrometry...transmission electron microscope (STEM), sample preparation 15. NUMBER OF PAGES 103 16. PRICE CODE 17. SECURITY CLASSIFICATION OF REPORT...Computer Engineering iii THIS PAGE INTENTIONALLY LEFT BLANK iv ABSTRACT The purpose of this thesis is to streamline the sample preparation

UDOF direct improvement by modulating mask absorber thickness

NASA Astrophysics Data System (ADS)

Yu, Tuan-Yen; Lio, En Chuan; Chen, Po Tsang; Wei, Chih I.; Chen, Yi Ting; Peng, Ming Chun; Chou, William; Yu, Chun Chi

2016-10-01

As the process generation migrate to advanced and smaller dimension or pitch, the mask and resist 3D effects will impact the lithography focus common window severely because of both individual depth-of-focus (iDOF) range decrease and center mismatch. Furthermore, some chemical or thermal factors, such as PEB (Post Exposure Bake) also worsen the usable depth-of-focus (uDOF) performance. So the mismatch of thru-pitch iDOF center should be considered as a lithography process integration issue, and more complicated to partition the 3D effects induced by optical or chemical factors. In order to reduce the impact of 3D effects induced by both optical and chemical issues, and improve iDOF center mismatch, we would like to propose a mask absorber thickness offset approach, which is directly to compensate the iDOF center bias by adjusting mask absorber thickness, for iso, semi-iso or dense characteristics in line, space or via patterns to enlarge common process window, i.e uDOF, which intends to provide similar application as Flexwave[1] (ASML trademark). By the way, since mask absorber thickness offset approach is similar to focus tuning or change on wafer lithography process, it could be acted as the process tuning method of photoresist (PR) profile optimization locally, PR scum improvement in specific patterns or to modulate etching bias to meet process integration request. For mass production consideration, and available material, current att-PSM blank, quartz, MoSi with chrome layer as hard-mask in reticle process, will be implemented in this experiment, i.e. chrome will be kept remaining above partial thru-pitch patterns, and act as the absorber thickness bias in different patterns. And then, from the best focus offset of thru-pitch patterns, the iDOF center shifts could be directly corrected and to enlarge uDOF by increasing the overlap of iDOF. Finally, some negative tone development (NTD) result in line patterns will be demonstrated as well.

Complex Pupil Masks for Aberrated Imaging of Closely Spaced Objects

NASA Astrophysics Data System (ADS)

Reddy, A. N. K.; Sagar, D. K.; Khonina, S. N.

2017-12-01

Current approach demonstrates the suppression of optical side-lobes and the contraction of the main lobe in the composite image of two object points of the optical system under the influence of defocusing effect when an asymmetric phase edges are imposed over the apodized circular aperture. The resolution of two point sources having different intensity ratio is discussed in terms of the modified Sparrow criterion, functions of the degree of coherence of the illumination, the intensity difference and the degree of asymmetric phase masking. Here we have introduced and explored the effects of focus aberration (defect-of-focus) on the two-point resolution of the optical systems. Results on the aberrated composite image of closely spaced objects with amplitude mask and asymmetric phase masks forms a significant contribution in astronomical and microscopic observations.

A sheet metal forming simulation of automotive outer panels considering the behavior of air in die cavity

NASA Astrophysics Data System (ADS)

Choi, Kwang Yong; Kim, Yun Chang; Choi, Hee Kwan; Kang, Chul Ho; Kim, Heon Young

2013-12-01

During a sheet metal forming process of automotive outer panels, the air trapped between a blank sheet and a die tool can become highly compressed, ultimately influencing the blank deformation and the press force. To prevent this problem, vent holes are drilled into die tools and needs several tens to hundreds according to the model size. The design and the drilling of vent holes are based on expert's experience and try-out result and thus the process can be one of reasons increasing development cycle. Therefore the study on the size, the number, and the position of vent holes is demanded for reducing development cycle, but there is no simulation technology for analyzing forming defects, making numerical sheet metal forming process simulations that incorporate the fluid dynamics of air. This study presents a sheet metal forming simulation of automotive outer panels (a roof and a body side outer) that simultaneously simulates the behavior of air in a die cavity. Through CAE results, the effect of air behavior and vent holes to blank deformation was analyzed. For this study, the commercial software PAM-STAMP{trade mark, serif} and PAM-SAFE{trade mark, serif} was used.

Improving the sensitivity of gamma-ray telescopes to dark matter annihilation in dwarf spheroidal galaxies

DOE PAGES

Carlson, Eric; Hooper, Dan; Linden, Tim

2015-03-01

The Fermi-LAT Collaboration has studied the gamma-ray emission from a stacked population of dwarf spheroidal galaxies and used this information to set constraints on the dark matter annihilation cross section. Interestingly, their analysis uncovered an excess with a test statistic (TS) of 8.7. If interpreted naively, this constitutes a 2.95σ local excess (p-value=0.003), relative to the expectations of their background model. In order to further test this interpretation, the Fermi-LAT team studied a large number of blank sky locations and found TS>8.7 excesses to be more common than predicted by their background model, decreasing the significance of their dwarf excessmore » to 2.2σ(p-value=0.027). We argue that these TS>8.7 blank sky locations are largely the result of unresolved blazars, radio galaxies, and star-forming galaxies, and show that multiwavelength information can be used to reduce the degree to which such sources contaminate the otherwise blank sky. In particular, we show that masking regions of the sky that lie within 1° of sources contained in the BZCAT or CRATES catalogs reduce the fraction of blank sky locations with TS>8.7 by more than a factor of 2. Taking such multiwavelength information into account can enable experiments such as Fermi to better characterize their backgrounds and increase their sensitivity to dark matter in dwarf galaxies, the most important of which remain largely uncontaminated by unresolved point sources. We also note that for the range of dark matter masses and annihilation cross sections currently being tested by studies of dwarf spheroidal galaxies, simulations predict that Fermi should be able to detect a significant number of dark matter subhalos. These subhalos constitute a population of subthreshold gamma-ray point sources and represent an irreducible background for searches for dark matter annihilation in dwarf galaxies.« less

Particle contamination effects in EUVL: enhanced theory for the analytical determination of critical particle sizes

NASA Astrophysics Data System (ADS)

Brandstetter, Gerd; Govindjee, Sanjay

2012-03-01

Existing analytical and numerical methodologies are discussed and then extended in order to calculate critical contamination-particle sizes, which will result in deleterious effects during EUVL E-chucking in the face of an error budget on the image-placement-error (IPE). The enhanced analytical models include a gap dependant clamping pressure formulation, the consideration of a general material law for realistic particle crushing and the influence of frictional contact. We present a discussion of the defects of the classical de-coupled modeling approach where particle crushing and mask/chuck indentation are separated from the global computation of mask bending. To repair this defect we present a new analytic approach based on an exact Hankel transform method which allows a fully coupled solution. This will capture the contribution of the mask indentation to the image-placement-error (estimated IPE increase of 20%). A fully coupled finite element model is used to validate the analytical models and to further investigate the impact of a mask back-side CrN-layer. The models are applied to existing experimental data with good agreement. For a standard material combination, a given IPE tolerance of 1 nm and a 15 kPa closing pressure, we derive bounds for single particles of cylindrical shape (radius × height < 44 μm) and spherical shape (diameter < 12 μm).

Optical inspection system for cylindrical objects

DOEpatents

Brenden, Byron B.; Peters, Timothy J.

1989-01-01

In the inspection of cylindrical objects, particularly O-rings, the object is translated through a field of view and a linear light trace is projected on its surface. An image of the light trace is projected on a mask, which has a size and shape corresponding to the size and shape which the image would have if the surface of the object were perfect. If there is a defect, light will pass the mask and be sensed by a detector positioned behind the mask. Preferably, two masks and associated detectors are used, one mask being convex to pass light when the light trace falls on a projection from the surface and the other concave, to pass light when the light trace falls on a depression in the surface. The light trace may be either dynamic, formed by a scanned laser beam, or static, formed by such a beam focussed by a cylindrical lens. Means are provided to automatically keep the illuminating receiving systems properly aligned.

An object-mediated updating account of insensitivity to transsaccadic change

PubMed Central

Tas, A. Caglar; Moore, Cathleen M.; Hollingworth, Andrew

2012-01-01

Recent evidence has suggested that relatively precise information about the location and visual form of a saccade target object is retained across a saccade. However, this information appears to be available for report only when the target is removed briefly, so that the display is blank when the eyes land. We hypothesized that the availability of precise target information is dependent on whether a post-saccade object is mapped to the same object representation established for the presaccade target. If so, then the post-saccade features of the target overwrite the presaccade features, a process of object mediated updating in which visual masking is governed by object continuity. In two experiments, participants' sensitivity to the spatial displacement of a saccade target was improved when that object changed surface feature properties across the saccade, consistent with the prediction of the object-mediating updating account. Transsaccadic perception appears to depend on a mechanism of object-based masking that is observed across multiple domains of vision. In addition, the results demonstrate that surface-feature continuity contributes to visual stability across saccades. PMID:23092946

Saccade adaptation goes for the goal

PubMed Central

Madelain, Laurent; Herman, James P.; Harwood, Mark R.

2013-01-01

The oculomotor system maintains saccade accuracy by adjusting saccades that are consistently inaccurate. Four experiments were performed to determine the relative contribution of background and target postsaccadic displacement. Unlike typical saccade adaptation experiments, we used natural image scenes and masked target and background displacements during the saccade to exclude motion signals from allowing detection of the displacements. We found that the background had no effect on saccade gain while the target drove gain changes. Only when the target was blanked after the saccade did we observe some adaptation in the direction of the background displacement. We conclude that target selection is critical to saccade adaptation, and operates effectively against natural image backgrounds. PMID:23492925

Sodium phenylbutyrate coated granules (Pheburane). Defective urea synthesis: a welcome formulation.

PubMed

2015-02-01

Compared with Ammonaps granules, Pheburane coated granules mask the unpleasant taste of sodium phenylbutyrate. A more precise dosing device is provided with the coated granules than with the uncoated granules (Ammonaps).

Photomask quality evaluation using lithography simulation and precision SEM image contour data

NASA Astrophysics Data System (ADS)

Murakawa, Tsutomu; Fukuda, Naoki; Shida, Soichi; Iwai, Toshimichi; Matsumoto, Jun; Nakamura, Takayuki; Hagiwara, Kazuyuki; Matsushita, Shohei; Hara, Daisuke; Adamov, Anthony

2012-11-01

To evaluate photomask quality, the current method uses spatial imaging by optical inspection tools. This technique at 1Xnm node has a resolution limit because small defects will be difficult to extract. To simulate the mask error-enhancement factor (MEEF) influence for aggressive OPC in 1Xnm node, wide FOV contour data and tone information are derived from high precision SEM images. For this purpose we have developed a new contour data extraction algorithm with sub-nanometer accuracy resulting in a wide Field of View (FOV) SEM image: (for example, more than 10um x 10um square). We evaluated MEEF influence of high-end photomask pattern using the wide FOV contour data of "E3630 MVM-SEMTM" and lithography simulator "TrueMaskTM DS" of D2S, Inc. As a result, we can detect the "invisible defect" as the MEEF influence using the wide FOV contour data and lithography simulator.

An improved algorithm of mask image dodging for aerial image

NASA Astrophysics Data System (ADS)

Zhang, Zuxun; Zou, Songbai; Zuo, Zhiqi

2011-12-01

The technology of Mask image dodging based on Fourier transform is a good algorithm in removing the uneven luminance within a single image. At present, the difference method and the ratio method are the methods in common use, but they both have their own defects .For example, the difference method can keep the brightness uniformity of the whole image, but it is deficient in local contrast; meanwhile the ratio method can work better in local contrast, but sometimes it makes the dark areas of the original image too bright. In order to remove the defects of the two methods effectively, this paper on the basis of research of the two methods proposes a balance solution. Experiments show that the scheme not only can combine the advantages of the difference method and the ratio method, but also can avoid the deficiencies of the two algorithms.

Monte Carlo sensitivity analysis of EUV mask reflectivity and its impact on OPC accuracy

NASA Astrophysics Data System (ADS)

Chen, Yulu; Wood, Obert; Rankin, Jed; Gullikson, Eric; Meyer-Ilse, Julia; Sun, Lei; Qi, Zhengqing John; Goodwin, Francis; Kye, Jongwook

2017-03-01

Unlike optical masks which are transmissive optical elements, use of extreme ultraviolet (EUV) radiation requires a reflective mask structure - a multi-layer coating consisting of alternating layers of high-Z (wave impedance) and low-Z materials that provide enhanced reflectivity over a narrow wavelength band peaked at the Bragg wavelength.1 Absorber side wall angle, corner rounding,2 surface roughness,3 and defects4 affect mask performance, but even seemingly simple parameters like bulk reflectivity on mirror and absorber surfaces can have a profound influence on imaging. For instance, using inaccurate reflectivity values at small and large incident angles would diminish the benefits of source mask co-optimization (SMO) and result in larger than expected pattern shifts. The goal of our work is to calculate the variation in mask reflectivity due to various sources of inaccuracies using Monte Carlo simulations. Such calculation is necessary as small changes in the thickness and optical properties of the high-Z and low-Z materials can cause substantial variations in reflectivity. This is further complicated by undesirable intermixing between the two materials used to create the reflector.5 One of the key contributors to mask reflectivity fluctuation is identified to be the intermixing layer thickness. We also investigate the impacts on OPC when the wrong mask information is provided, and evaluate the deterioration of overlapping process window. For a hypothetical N7 via layer, the lack of accurate mask information costs 25% of the depth of focus at 5% exposure latitude. Our work would allow the determination of major contributors to mask reflectivity variation, drive experimental efforts of measuring such contributors, provide strategies to optimize mask reflectivity, and quantize the OPC errors due to imperfect mask modeling.

Different Effects of Implanting Sensory Nerve or Blood Vessel on the Vascularization, Neurotization, and Osteogenesis of Tissue-Engineered Bone In Vivo

PubMed Central

Fan, Jun-jun; Mu, Tian-wang; Qin, Jun-jun; Bi, Long; Pei, Guo-xian

2014-01-01

To compare the different effects of implanting sensory nerve tracts or blood vessel on the osteogenesis, vascularization, and neurotization of the tissue-engineered bone in vivo, we constructed the tissue engineered bone and implanted the sensory nerve tracts (group SN), blood vessel (group VB), or nothing (group Blank) to the side channel of the bone graft to repair the femur defect in the rabbit. Better osteogenesis was observed in groups SN and VB than in group Blank, and no significant difference was found between groups SN and VB at 4, 8, and 12 weeks postoperatively. The neuropeptides expression and the number of new blood vessels in the bone tissues were increased at 8 weeks and then decreased at 12 weeks in all groups and were highest in group VB and lowest in group Blank at all three time points. We conclude that implanting either blood vessel or sensory nerve tract into the tissue-engineered bone can significantly enhance both the vascularization and neurotization simultaneously to get a better osteogenesis effect than TEB alone, and the method of implanting blood vessel has a little better effect of vascularization and neurotization but almost the same osteogenesis effect as implanting sensory nerve. PMID:25101279

Expanding the printable design space for lithography processes utilizing a cut mask

NASA Astrophysics Data System (ADS)

Wandell, Jerome; Salama, Mohamed; Wilkinson, William; Curtice, Mark; Feng, Jui-Hsuan; Gao, Shao Wen; Asthana, Abhishek

2016-03-01

The utilization of a cut-mask in semiconductor patterning processes has been in practice for logic devices since the inception of 32nm-node devices, notably with unidirectional gate level printing. However, the microprocessor applications where cut-mask patterning methods are used are expanding as Self-Aligned Double Patterning (SADP) processes become mainstream for 22/14nm fin diffusion, and sub-14nm metal levels. One common weakness for these types of lithography processes is that the initial pattern requiring the follow-up cut-mask typically uses an extreme off-axis imaging source such as dipole to enhance the resolution and line-width roughness (LWR) for critical dense patterns. This source condition suffers from poor process margin in the semi-dense (forbidden pitch) realm and wrong-way directional design spaces. Common pattern failures in these limited design regions include bridging and extra-printing defects that are difficult to resolve with traditional mask improvement means. This forces the device maker to limit the allowable geometries that a designer may use on a device layer. This paper will demonstrate methods to expand the usable design space on dipole-like processes such as unidirectional gate and SADP processes by utilizing the follow-up cut mask to improve the process window. Traditional mask enhancement means for improving the process window in this design realm will be compared to this new cut-mask approach. The unique advantages and disadvantages of the cut-mask solution will be discussed in contrast to those customary methods.

Osteogenic properties of PBLG-g-HA/PLLA nanocomposites.

PubMed

Liao, Lan; Yang, Shuang; Miron, Richard J; Wei, Junchao; Zhang, Yufeng; Zhang, Meng

2014-01-01

New development of biomaterial scaffolds remains a prominent issue for the regeneration of lost or fractured bone. Of these scaffolds, a number of bioactive polymers have been synthesized and fabricated for diverse biological roles. Although recent evidence has demonstrated that composite scaffolds such as HA/PLLA have improved properties when compared to either HA or PLLA alone, recent investigations have demonstrated that the phase compatibility between HA and PLLA layers is weak preventing optimal enhancement of the mechanical properties and making the composites prone to breakdown. In the present study, poly (γ-benzyl-L-glutamate) modified hydroxyapatite/(poly (L-lactic acid)) (PBLG-g-HA/PLLA) composite scaffolds were fabricated with improved phase compatibility and tested for their osteogenic properties in 18 Wistar female rats by analyzing new bone formation in 3 mm bilateral femur defects in vivo. At time points, 2, 4 and 8 weeks post surgery, bone formation was evaluated by µ-CT and histological analysis by comparing 4 treatment groups; 1) blank defect, 2) PLLA, 3) HA/PLLA and 4) PBLG-g-HA/PLLA scaffolds. The in vivo analysis demonstrated that new bone formation was much more prominent in HA/PLLA and PBLG-g-HA/PLLA groups as depicted by µ-CT, H&E staining and immunohistochemistry for collagen I. TRAP staining was also utilized to determine the influence of osteoclast cell number and staining intensity to the various scaffolds. No significant differences in either staining intensity or osteoclast numbers between all treatment modalities was observed, however blank defects did contain a higher number of osteoclast-like cells. The results from the present study illustrate the potential of PBLG-g-HA/PLLA scaffolds for bone tissue engineering applications by demonstrating favorable osteogenic properties.

Polarization Enhanced Charge Transfer: Dual-Band GaN-Based Plasmonic Photodetector.

PubMed

Jia, Ran; Zhao, Dongfang; Gao, Naikun; Liu, Duo

2017-01-13

Here, we report a dual-band plasmonic photodetector based on Ga-polar gallium nitride (GaN) for highly sensitive detection of UV and green light. We discover that decoration of Au nanoparticles (NPs) drastically increases the photoelectric responsivities by more than 50 times in comparition to the blank GaN photodetector. The observed behaviors are attributed to polarization enhanced charge transfer of optically excited hot electrons from Au NPs to GaN driven by the strong spontaneous polarization field of Ga-polar GaN. Moreover, defect ionization promoted by localized surface plasmon resonances (LSPRs) is also discussed. This novel type of photodetector may shed light on the design and fabrication of photoelectric devices based on polar semiconductors and microstructural defects.

Edge effects in phase-shifting masks for 0.25-µm lithography

NASA Astrophysics Data System (ADS)

Wong, Alfred K. K.; Neureuther, Andrew R.

1993-03-01

The impact on image quality of scattering from phase-shifter edges and of interactions between phase-shifter and chrome edges is assessed using rigorous electromagnetic simulation. Effects of edge taper in phase-shift masks, spacing between phase-shifter and chrome edges, small outrigger features with a trench phase-shifter, and of the repair of phase defects by etching to 360 degree(s) are considered. Near field distributions and diffraction efficiencies are examined and images are compared with more approximate results from the commonly used Hopkins' theory of imaging.

Massively parallel E-beam inspection: enabling next-generation patterned defect inspection for wafer and mask manufacturing

NASA Astrophysics Data System (ADS)

Malloy, Matt; Thiel, Brad; Bunday, Benjamin D.; Wurm, Stefan; Mukhtar, Maseeh; Quoi, Kathy; Kemen, Thomas; Zeidler, Dirk; Eberle, Anna Lena; Garbowski, Tomasz; Dellemann, Gregor; Peters, Jan Hendrik

2015-03-01

SEMATECH aims to identify and enable disruptive technologies to meet the ever-increasing demands of semiconductor high volume manufacturing (HVM). As such, a program was initiated in 2012 focused on high-speed e-beam defect inspection as a complement, and eventual successor, to bright field optical patterned defect inspection [1]. The primary goal is to enable a new technology to overcome the key gaps that are limiting modern day inspection in the fab; primarily, throughput and sensitivity to detect ultra-small critical defects. The program specifically targets revolutionary solutions based on massively parallel e-beam technologies, as opposed to incremental improvements to existing e-beam and optical inspection platforms. Wafer inspection is the primary target, but attention is also being paid to next generation mask inspection. During the first phase of the multi-year program multiple technologies were reviewed, a down-selection was made to the top candidates, and evaluations began on proof of concept systems. A champion technology has been selected and as of late 2014 the program has begun to move into the core technology maturation phase in order to enable eventual commercialization of an HVM system. Performance data from early proof of concept systems will be shown along with roadmaps to achieving HVM performance. SEMATECH's vision for moving from early-stage development to commercialization will be shown, including plans for development with industry leading technology providers.

The lithographer's dilemma: shrinking without breaking the bank

NASA Astrophysics Data System (ADS)

Levinson, Harry J.

2013-10-01

It can no longer be assumed that the lithographic scaling which has previously driven Moore's Law will lead in the future to reduced cost per transistor. Until recently, higher prices for lithography tools were offset by improvements in scanner productivity. The necessity of using double patterning to extend scaling beyond the single exposure resolution limit of optical lithography has resulted in a sharp increase in the cost of patterning a critical construction layer that has not been offset by improvements in exposure tool productivity. Double patterning has also substantially increased the cost of mask sets. EUV lithography represents a single patterning option, but the combination of very high exposure tools prices, moderate throughput, high maintenance costs, and expensive mask blanks makes this a solution more expensive than optical double patterning but less expensive than triple patterning. Directed self-assembly (DSA) could potentially improve wafer costs, but this technology currently is immature. There are also design layout and process integration issues associated with DSA that need to be solved in order to obtain full benefit from tighter pitches. There are many approaches for improving the cost effectiveness of lithography. Innovative double patterning schemes lead to smaller die. EUV lithography productivity can be improved with higher power light sources and improved reliability. There are many technical and business challenges for extending EUV lithography to higher numerical apertures. Efficient contact hole and cut mask solutions are needed, as well as very tight overlay control, regardless of lithographic solution.

Protection efficiency of a standard compliant EUV reticle handling solution

NASA Astrophysics Data System (ADS)

He, Long; Lystad, John; Wurm, Stefan; Orvek, Kevin; Sohn, Jaewoong; Ma, Andy; Kearney, Patrick; Kolbow, Steve; Halbmaier, David

2009-03-01

For successful implementation of extreme ultraviolet lithography (EUVL) technology for late cycle insertion at 32 nm half-pitch (hp) and full introduction for 22 nm hp high volume production, the mask development infrastructure must be in place by 2010. The central element of the mask infrastructure is contamination-free reticle handling and protection. Today, the industry has already developed and balloted an EUV pod standard for shipping, transporting, transferring, and storing EUV masks. We have previously demonstrated that the EUV pod reticle handling method represents the best approach in meeting EUVL high volume production requirements, based on then state-of-the-art inspection capability at ~53nm polystyrene latex (PSL) equivalent sensitivity. In this paper, we will present our latest data to show defect-free reticle handling is achievable down to 40 nm particle sizes, using the same EUV pod carriers as in the previous study and the recently established world's most advanced defect inspection capability of ~40 nm SiO2 equivalent sensitivity. The EUV pod is a worthy solution to meet EUVL pilot line and pre-production exposure tool development requirements. We will also discuss the technical challenges facing the industry in refining the EUV pod solution to meet 22 nm hp EUVL production requirements and beyond.

A study of phase defect measurement on EUV mask by multiple detectors CD-SEM

NASA Astrophysics Data System (ADS)

Yonekura, Isao; Hakii, Hidemitsu; Morisaki, Shinya; Murakawa, Tsutomu; Shida, Soichi; Kuribara, Masayuki; Iwai, Toshimichi; Matsumoto, Jun; Nakamura, Takayuki

2013-06-01

We have studied MVM (Multi Vision Metrology) -SEM® E3630 to measure 3D shape of defects. The four detectors (Detector A, B, C and D) are independently set up in symmetry for the primary electron beam axis. Signal processing of four direction images enables not only 2D (width) measurement but also 3D (height) measurement. At last PMJ, we have investigated the relation between the E3630's signal of programmed defect on MoSi-HT and defect height measured by AFM (Atomic Force Microscope). It was confirmed that height of integral profile by this tool is correlated with AFM. It was tested that E3630 has capability of observing multilayer defect on EUV. We have investigated correlation with AFM of width and depth or height of multilayer defect. As the result of observing programmed defects, it was confirmed that measurement result by E3630 is well correlated with AFM. And the function of 3D view image enables to show nm order defect.

Pattern centric design based sensitive patterns and process monitor in manufacturing

NASA Astrophysics Data System (ADS)

Hsiang, Chingyun; Cheng, Guojie; Wu, Kechih

2017-03-01

When design rule is mitigating to smaller dimension, process variation requirement is tighter than ever and challenges the limits of device yield. Masks, lithography, etching and other processes have to meet very tight specifications in order to keep defect and CD within the margins of the process window. Conventionally, Inspection and metrology equipments are utilized to monitor and control wafer quality in-line. In high throughput optical inspection, nuisance and review-classification become a tedious labor intensive job in manufacturing. Certain high-resolution SEM images are taken to validate defects after optical inspection. These high resolution SEM images catch not only optical inspection highlighted point, also its surrounding patterns. However, this pattern information is not well utilized in conventional quality control method. Using this complementary design based pattern monitor not only monitors and analyzes the variation of patterns sensitivity but also reduce nuisance and highlight defective patterns or killer defects. After grouping in either single or multiple layers, systematic defects can be identified quickly in this flow. In this paper, we applied design based pattern monitor in different layers to monitor process variation impacts on all kinds of patterns. First, the contour of high resolutions SEM image is extracted and aligned to design with offset adjustment and fine alignment [1]. Second, specified pattern rules can be applied on design clip area, the same size as SEM image, and form POI (pattern of interest) areas. Third, the discrepancy of contour and design measurement at different pattern types in measurement blocks. Fourth, defective patterns are reported by discrepancy detection criteria and pattern grouping [4]. Meanwhile, reported pattern defects are ranked by number and severity by discrepancy. In this step, process sensitive high repeatable systematic defects can be identified quickly Through this design based process pattern monitor method, most of optical inspection nuisances can be filtered out at contour to design discrepancy measurement. Daily analysis results are stored at database as reference to compare with incoming data. Defective pattern library contains existing and known systematic defect patterns which help to catch and identify new pattern defects or process impacts. On the other hand, this defect pattern library provides extra valuable information for mask, pattern and defects verification, inspection care area generation, further OPC fix and process enhancement and investigation.

A novel approach to mask defect inspection

NASA Astrophysics Data System (ADS)

Sagiv, Amir; Shirman, Yuri; Mangan, Shmoolik

2008-10-01

Memory chips, now constituting a major part of semiconductor market, posit a special challenge for inspection, as they are generally produced with the smallest half-pitch available with today's technology. This is true, in particular, to photomasks of advanced memory devices, which are at the forefront of the "low-k1" regime. In this paper we present a novel photomask inspection approach, that is particularly suitable for low-k1 layers of advanced memory chips, owing to their typical dense and periodic structure. The method we present can produce a very strong signal for small mask defects, by suppression of the modulation of the pattern's image. Unlike dark-field detection, however, here a single diffraction order associated with the pattern generates a constant "gray" background image, that is used for signal enhancement. We define the theoretical basis for the new detection technique, and show, both analytically and numerically, that it can easily achieve a detection line past the printability spec, and that in cases it is at least as sensitive as high-resolution based detection. We also demonstrate this claim experimentally on a customer mask, using the platform of Applied Material's newly released Aera2TM mask inspection tool. The high sensitivity demonstrates the important and often overlooked concept that resolution is not synonymous with sensitivity. The novel detection method is advantageous in several other aspects, such as the very simple implementation, the high throughput, and the relatively simple pre- and post-processing algorithms required for signal extraction. These features, and in particular the very high sensitivity, make this novel detection method an attractive inspection option for advanced memory devices.

How Suspicion Grows: Effects of Population Size on Cooperation

DTIC Science & Technology

2014-09-01

suspicious tit-for-tat TFT tit-for-tat TF2T tit-for-two-tats xiii THIS PAGE INTENTIONALLY LEFT BLANK xiv Executive Summary People in a group typically...theoretic model mathematically tractable, we restrict each individual to four strategies: tit-for-two-tats (TF2T), tit-for-tat ( TFT ), suspicious-tit...stranger, TF2T will begin by cooperation twice, TFT by cooperating once, and STFT by defecting once. After the initial moves, in each encounter, the

Software for roof defects recognition on aerial photographs

NASA Astrophysics Data System (ADS)

Yudin, D.; Naumov, A.; Dolzhenko, A.; Patrakova, E.

2018-05-01

The article presents information on software for roof defects recognition on aerial photographs, made with air drones. An areal image segmentation mechanism is described. It allows detecting roof defects – unsmoothness that causes water stagnation after rain. It is shown that HSV-transformation approach allows quick detection of stagnation areas, their size and perimeters, but is sensitive to shadows and changes of the roofing-types. Deep Fully Convolutional Network software solution eliminates this drawback. The tested data set consists of the roofing photos with defects and binary masks for them. FCN approach gave acceptable results of image segmentation in Dice metric average value. This software can be used in inspection automation of roof conditions in the production sector and housing and utilities infrastructure.

CD control with defect inspection: you can teach an old dog a new trick

NASA Astrophysics Data System (ADS)

Utzny, Clemens; Ullrich, Albrecht; Heumann, Jan; Mohn, Elias; Meusemann, Stefan; Seltmann, Rolf

2012-11-01

Achieving the required critical dimensions (CD) with the best possible uniformity (CDU) on photo-masks has always played a pivotal role in enabling chip technology. Current control strategies are based on scanning electron microscopy (SEM) based measurements implying a sparse spatial resolution on the order of ~ 10-2 m to 10-1 m. A higher spatial resolution could be reached with an adequate measurement sampling, however the increase in the number of measurements makes this approach in the context of a productive environment unfeasible. With the advent of more powerful defect inspection tools a significantly higher spatial resolution of 10-4 m can be achieved by measuring also CD during the regular defect inspection. This method is not limited to the measurement of specific measurement features thus paving the way to a CD assessment of all electrically relevant mask patterns. Enabling such a CD measurement gives way to new realms of CD control. Deterministic short range CD effects which were previously interpreted as noise can be resolved and addressed by CD compensation methods. This in can lead to substantial improvements of the CD uniformity. Thus the defect inspection mediated CD control closes a substantial gap in the mask manufacturing process by allowing the control of short range CD effects which were up till now beyond the reach of regular CD SEM based control strategies. This increase in spatial resolution also counters the decrease in measurement precision due to the usage of an optical system. In this paper we present detailed results on a) the CD data generated during the inspection process, b) the analytical tools needed for relating this data to CD SEM measurement and c) how the CD inspection process enables new dimension of CD compensation within the mask manufacturing process. We find that the inspection based CD measurement generates typically around 500000 measurements with a homogeneous covering of the active mask area. In comparing the CD inspection results with CD SEM measurement on a single measurement point base we find that optical limitations of the inspection tool play a substantial role within the photon based inspection process. Once these shift are characterized and removed a correlation coefficient of 0.9 between these two CD measurement techniques is found. This finding agrees well with a signature based matching approach. Based on these findings we set up a dedicated pooling algorithm which performs on outlier removal for all CD inspections together with a data clustering according to feature specific tool induced shifts. This way tool induced shift effects can be removed and CD signature computation is enabled. A statistical model of the CD signatures which relates the mask design parameters on the relevant length scales to CD effects thus enabling the computation CD compensation maps. The compensation maps address the CD effects on various distinct length scales and we show that long and short range contributions to the CD variation are decreased. We find that the CD uniformity is improved by 25% using this novel CD compensation strategy.

High brightness electrodeless Z-Pinch EUV source for mask inspection tools

NASA Astrophysics Data System (ADS)

Horne, Stephen F.; Partlow, Matthew J.; Gustafson, Deborah S.; Besen, Matthew M.; Smith, Donald K.; Blackborow, Paul A.

2012-03-01

Energetiq Technology has been shipping the EQ-10 Electrodeless Z-pinchTM light source since 1995. The source is currently being used for metrology, mask inspection, and resist development. Energetiq's higher brightness source has been selected as the source for pre-production actinic mask inspection tools. This improved source enables the mask inspection tool suppliers to build prototype tools with capabilities of defect detection and review down to 16nm design rules. In this presentation we will present new source technology being developed at Energetiq to address the critical source brightness issue. The new technology will be shown to be capable of delivering brightness levels sufficient to meet the HVM requirements of AIMS and ABI and potentially API tools. The basis of the source technology is to use the stable pinch of the electrodeless light source and have a brightness of up to 100W/mm(carat)2-sr. We will explain the source design concepts, discuss the expected performance and present the modeling results for the new design.

ArF halftone PSM cleaning process optimization for next-generation lithography

NASA Astrophysics Data System (ADS)

Son, Yong-Seok; Jeong, Seong-Ho; Kim, Jeong-Bae; Kim, Hong-Seok

2000-07-01

ArF lithography which is expected for the next generation optical lithography is adapted for 0.13 micrometers design-rule and beyond. ArF half-tone phase shift mask (HT PSM) will be applied as 1st generation of ArF lithography. Also ArF PSM cleaning demands by means of tighter controls related to phase angle, transmittance and contamination on the masks. Phase angle on ArF HT PSM should be controlled within at least +/- 3 degree and transmittance controlled within at least +/- 3 percent after cleaning process and pelliclization. In the cleaning process of HT PSM, requires not only the remove the particle on mask, but also control to half-tone material for metamorphosis. Contamination defects on the Qz of half tone type PSM is not easy to remove on the photomask surface. New technology and methods of cleaning will be developed in near future, but we try to get out for limit contamination on the mask, without variation of phase angle and transmittance after cleaning process.

Metal oxide multilayer hard mask system for 3D nanofabrication

NASA Astrophysics Data System (ADS)

Han, Zhongmei; Salmi, Emma; Vehkamäki, Marko; Leskelä, Markku; Ritala, Mikko

2018-02-01

We demonstrate the preparation and exploitation of multilayer metal oxide hard masks for lithography and 3D nanofabrication. Atomic layer deposition (ALD) and focused ion beam (FIB) technologies are applied for mask deposition and mask patterning, respectively. A combination of ALD and FIB was used and a patterning procedure was developed to avoid the ion beam defects commonly met when using FIB alone for microfabrication. ALD grown Al2O3/Ta2O5/Al2O3 thin film stacks were FIB milled with 30 keV gallium ions and chemically etched in 5% tetramethylammonium hydroxide at 50 °C. With metal evaporation, multilayers consisting of amorphous oxides Al2O3 and Ta2O5 can be tailored for use in 2D lift-off processing, in preparation of embedded sub-100 nm metal lines and for multilevel electrical contacts. Good pattern transfer was achieved by lift-off process from the 2D hard mask for micro- and nano-scaled fabrication. As a demonstration of the applicability of this method to 3D structures, self-supporting 3D Ta2O5 masks were made from a film stack on gold particles. Finally, thin film resistors were fabricated by utilizing controlled stiction of suspended Ta2O5 structures.

Wafer plane inspection with soft resist thresholding

NASA Astrophysics Data System (ADS)

Hess, Carl; Shi, Rui-fang; Wihl, Mark; Xiong, Yalin; Pang, Song

2008-10-01

Wafer Plane Inspection (WPI) is an inspection mode on the KLA-Tencor TeraScaTM platform that uses the high signalto- noise ratio images from the high numerical aperture microscope, and then models the entire lithographic process to enable defect detection on the wafer plane[1]. This technology meets the needs of some advanced mask manufacturers to identify the lithographically-significant defects while ignoring the other non-lithographically-significant defects. WPI accomplishes this goal by performing defect detection based on a modeled image of how the mask features would actually print in the photoresist. There are several advantages to this approach: (1) the high fidelity of the images provide a sensitivity advantage over competing approaches; (2) the ability to perform defect detection on the wafer plane allows one to only see those defects that have a printing impact on the wafer; (3) the use of modeling on the lithographic portion of the flow enables unprecedented flexibility to support arbitrary illumination profiles, process-window inspection in unit time, and combination modes to find both printing and non-printing defects. WPI is proving to be a valuable addition to the KLA-Tencor detection algorithm suite. The modeling portion of WPI uses a single resist threshold as the final step in the processing. This has been shown to be adequate on several advanced customer layers, but is not ideal for all layers. Actual resist chemistry has complicated processes including acid and base-diffusion and quench that are not consistently well-modeled with a single resist threshold. We have considered the use of an advanced resist model for WPI, but rejected it because the burdensome requirements for the calibration of the model were not practical for reticle inspection. This paper describes an alternative approach that allows for a "soft" resist threshold to be applied that provides a more robust solution for the most challenging processes. This approach is just finishing beta testing with a customer developing advanced node designs.

Defect inspection of periodic patterns with low-order distortions

NASA Astrophysics Data System (ADS)

Khalaj, Babak H.; Aghajan, Hamid K.; Paulraj, Arogyaswami; Kailath, Thomas

1994-03-01

A self-reliance technique is developed for detecting defects in repeated pattern wafers and masks with low-order distortions. If the patterns are located on a perfect rectangular grid, it is possible to estimate the period of repeated patterns in both directions, and then produce a defect-free reference image for making comparison with the actual image. But in some applications, the repeated patterns are somehow shifted from their desired position on a rectangular grid, and the aforementioned algorithm cannot be directly applied. In these situations, to produce a defect-free reference image and locate the defected cells, it is necessary to estimate the amount of misalignment of each cell beforehand. The proposed technique first estimates the misalignment of repeated patterns in each row and column. After estimating the location of all cells in the image, a defect-free reference image is generated by averaging over all the cells and is compared with the input image to localize the possible defects.

Evaluation of anti-sticking layers performances for 200mm wafer scale Smart NILTM process through surface and defectivity characterizations

NASA Astrophysics Data System (ADS)

Delachat, F.; Phillipe, J.-C.; Larrey, V.; Fournel, F.; Bos, S.; Teyssèdre, H.; Chevalier, Xavier; Nicolet, Célia; Navarro, Christophe; Cayrefourcq, Ian

2018-03-01

In this work, an evaluation of various ASL processes for 200 mm wafer scale in the HERCULES® NIL equipment platform available at the CEA-Leti through the INSPIRE program is reported. The surface and adherence energies were correlated to the AFM and defectivity results in order to select the most promising ASL process for high resolution etch mask applications. The ASL performances of the selected process were evaluated by multiple working stamp fabrication using unpatterned and patterned masters though defectivity monitoring on optical based-inspection tools. Optical and SEM defect reviews were systematically performed. Multiple working stamps fabrication without degradation of the master defectivity was witnessed. This evaluation enabled to benchmark several ASL solutions based on the grafted technology develop by ARKEMA in order to reduce and optimize the soft stamp defectivity prior to its replication and therefore considerably reduce the final imprint defectivity for the Smart NIL process.

Shuttle Wing Leading Edge Root Cause NDE Team Findings and Implementation of Quantitative Flash Infrared Thermography

NASA Technical Reports Server (NTRS)

Burke, Eric R.

2009-01-01

Comparison metrics can be established to reliably and repeatedly establish the health of the joggle region of the Orbiter Wing Leading Edge reinforced carbon carbon (RCC) panels. Using these metrics can greatly reduced the man hours needed to perform, wing leading edge scanning for service induced damage. These time savings have allowed for more thorough inspections to be preformed in the necessary areas with out affecting orbiter flow schedule. Using specialized local inspections allows for a larger margin of safety by allowing for more complete characterizations of panel defects. The presence of the t-seal during thermographic inspection can have adverse masking affects on ability properly characterize defects that exist in the joggle region of the RCC panels. This masking affect dictates the final specialized inspection should be preformed with the t-seal removed. Removal of the t-seal and use of the higher magnification optics has lead to the most effective and repeatable inspection method for characterizing and tracking defects in the wing leading edge. Through this study some inadequacies in the main health monitoring system for the orbiter wing leading edge have been identified and corrected. The use of metrics and local specialized inspection have lead to a greatly increased reliability and repeatable inspection of the shuttle wing leading edge.

Fabrication of rectangular cross-sectional microchannels on PMMA with a CO2 laser and underwater fabricated copper mask

NASA Astrophysics Data System (ADS)

Prakash, Shashi; Kumar, Subrata

2017-09-01

CO2 lasers are commonly used for fabricating polymer based microfluidic devices. Despite several key advantages like low cost, time effectiveness, easy to operate and no requirement of clean room facility, CO2 lasers suffer from few disadvantages like thermal bulging, improper dimensional control, difficulty to produce microchannels of other than Gaussian cross sectional shapes and inclined surface walls. Many microfluidic devices require square or rectangular cross-sections which are difficult to produce using normal CO2 laser procedures. In this work, a thin copper sheet of 40 μm was used as a mask above the PMMA (Polymethyl-methacrylate) substrate while fabricating the microchannels utilizing the raster scanning feature of the CO2 lasers. Microchannels with different width dimensions were fabricated utilizing a CO2 laser in with mask and without-mask conditions. A comparison of both the fabricating process has been made. It was found that microchannels with U shape cross section and rectangular cross-section can efficiently be produced using the with mask technique. In addition to this, this technique can provide perfect dimensional control and better surface quality of the microchannel walls. Such a microchannel fabrication process do not require any post-processing. The fabrication of mask using a nanosecond fiber laser has been discussed in details. An underwater laser fabrication method was adopted to overcome heat related defects in mask preparation. Overall, the technique was found to be easy to adopt and significant improvements were observed in microchannel fabrication.

Thermal image analysis for detecting facemask leakage

NASA Astrophysics Data System (ADS)

Dowdall, Jonathan B.; Pavlidis, Ioannis T.; Levine, James

2005-03-01

Due to the modern advent of near ubiquitous accessibility to rapid international transportation the epidemiologic trends of highly communicable diseases can be devastating. With the recent emergence of diseases matching this pattern, such as Severe Acute Respiratory Syndrome (SARS), an area of overt concern has been the transmission of infection through respiratory droplets. Approved facemasks are typically effective physical barriers for preventing the spread of viruses through droplets, but breaches in a mask"s integrity can lead to an elevated risk of exposure and subsequent infection. Quality control mechanisms in place during the manufacturing process insure that masks are defect free when leaving the factory, but there remains little to detect damage caused by transportation or during usage. A system that could monitor masks in real-time while they were in use would facilitate a more secure environment for treatment and screening. To fulfill this necessity, we have devised a touchless method to detect mask breaches in real-time by utilizing the emissive properties of the mask in the thermal infrared spectrum. Specifically, we use a specialized thermal imaging system to detect minute air leakage in masks based on the principles of heat transfer and thermodynamics. The advantage of this passive modality is that thermal imaging does not require contact with the subject and can provide instant visualization and analysis. These capabilities can prove invaluable for protecting personnel in scenarios with elevated levels of transmission risk such as hospital clinics, border check points, and airports.

MEDEA+ project 2T302 MUSCLE: masks through user's supply chain: leadership by excellence

NASA Astrophysics Data System (ADS)

Torsy, Andreas

2008-04-01

The rapid evolution of our information society depends on the continuous developments and innovations of semiconductor products. The cost per chip functionality keeps reducing by a factor of 2 every 18 month. However, this performance and success of the semiconductor industry critically depends on the quality of the lithographic photomasks. The need for the high quality of photomask drives lithography costs sensitively, which is a key factor in the manufacture of microelectronics devices. Therefore, the aim is to reduce production costs while overcoming challenges in terms of feature sizes, complexity and cycle times. Consequently, lithography processes must provide highest possible quality at reasonable prices. This way, the leadership in the lithographic area can be maintained and European chipmakers can stay competitive with manufacturers in the Far East and the USA. Under the umbrella of MEDEA+, a project called MUSCLE (<< Masks through User's Supply Chain: Leadership by Excellence >>) has been started among leading semiconductor companies in Europe: ALTIS Semiconductor (Project Leader), ALCATEL Vacuum, ATMEL, CEA/LETI, Entegris, NXP Semiconductors, TOPPAN Photomasks, AMTC, Carl ZEISS SMS, DMS, Infineon Technologies, VISTEC Semiconductor, NIKON Precision, SCHOTT Lithotec, ASML, PHOTRONICS, IMEC, DCE, DNP Photomask, STMicroelectronics, XYALIS and iCADA. MUSCLE focuses particularly on mask data flow, photomask carrier, photomask defect characterization and photomask data handling. In this paper, we will discuss potential solutions like standardization and automation of the photomask data flow based on SEMI P10, the performance and the impact of the supply chain parameter within the photomask process, the standardization of photomask defect characterization and a discussion of the impact of new Reticle Enhancement Technologies (RET) such as mask process correction and finally a generic model to describe the photomasks key performance indicators for prototype photomasks.

Implant-retained skull prosthesis to cover a large defect of the hairy skull resulting from treatment of a basal cell carcinoma: A clinical report.

PubMed

Hoekstra, Jitske; Vissink, Arjan; Raghoebar, Gerry M; Visser, Anita

2017-05-01

Skin carcinoma, particularly basal cell carcinoma, and its treatment can result in large defects of the hairy skull. A 53-year-old man is described who was surgically treated for a large basal cell carcinoma invading the skin and underlying tissue at the top of the hairy skull. Treatment consisted of resecting the tumor and external part of the skull bone. To protect the brain and to cover the defect of the hairy skull, an acrylic resin skull prosthesis with hair was designed to mask the defect. The skull prosthesis was retained on 8 extraoral implants placed at the margins of the defect in the skull bone. The patient was satisfied with the treatment outcome. Copyright © 2016 Editorial Council for the Journal of Prosthetic Dentistry. Published by Elsevier Inc. All rights reserved.

Human vision-based algorithm to hide defective pixels in LCDs

NASA Astrophysics Data System (ADS)

Kimpe, Tom; Coulier, Stefaan; Van Hoey, Gert

2006-02-01

Producing displays without pixel defects or repairing defective pixels is technically not possible at this moment. This paper presents a new approach to solve this problem: defects are made invisible for the user by using image processing algorithms based on characteristics of the human eye. The performance of this new algorithm has been evaluated using two different methods. First of all the theoretical response of the human eye was analyzed on a series of images and this before and after applying the defective pixel compensation algorithm. These results show that indeed it is possible to mask a defective pixel. A second method was to perform a psycho-visual test where users were asked whether or not a defective pixel could be perceived. The results of these user tests also confirm the value of the new algorithm. Our "defective pixel correction" algorithm can be implemented very efficiently and cost-effectively as pixel-dataprocessing algorithms inside the display in for instance an FPGA, a DSP or a microprocessor. The described techniques are also valid for both monochrome and color displays ranging from high-quality medical displays to consumer LCDTV applications.

37 CFR 211.5 - Deposit of identifying material.

Code of Federal Regulations, 2014 CFR

2014-07-01

... work fixed in the form of the semiconductor chip product in which it was first commercially exploited. Defective chips may be deposited under this section provided that the mask work contribution would be revealed in reverse dissection of the chips. The four reproductions shall be accompanied by a visually...

37 CFR 211.5 - Deposit of identifying material.

Code of Federal Regulations, 2012 CFR

2012-07-01

... fixed in the form of the semiconductor chip product in which it was first commercially exploited. Defective chips may be deposited under this section provided that the mask work contribution would be revealed in reverse dissection of the chips. The four reproductions shall be accompanied by a visually...

37 CFR 211.5 - Deposit of identifying material.

Code of Federal Regulations, 2013 CFR

2013-07-01

... fixed in the form of the semiconductor chip product in which it was first commercially exploited. Defective chips may be deposited under this section provided that the mask work contribution would be revealed in reverse dissection of the chips. The four reproductions shall be accompanied by a visually...

Femtopulse laser-based mask repair in the DUV wavelength regime

NASA Astrophysics Data System (ADS)

Ghadiali, Firoz; Tolani, Vikram; Nagpal, Rajesh; Robinson, Tod; LeClaire, Jeff; Bozak, Ron; Lee, David A.; White, Roy

2006-05-01

Deep ultraviolet (DUV) femtosecond-pulsed laser ablation has numerous highly desirable properties for subtractive photomask defect repair. These qualities include high removal rates, resolution better than the focused spot size, minimized redeposition of the ablated material (rollup and splatter), and a negligible heat affected zone. The optical properties of the photomask result in a broad repair process window because the absorber film (whether Cr or MoSi) and the transmissive substrate allow for a high degree of material removal selectivity. Repair results and process parameters from such a system are examined in light of theoretical considerations. In addition, the practical aspects of the operation of this system in a production mask house environment are reviewed from the standpoint of repair quality, capability, availability, and throughput. Focus is given to the benefit received by the mask shop, and to the technical performance of the system.

Study of shape evaluation for mask and silicon using large field of view

NASA Astrophysics Data System (ADS)

Matsuoka, Ryoichi; Mito, Hiroaki; Shinoda, Shinichi; Toyoda, Yasutaka

2010-09-01

We have developed a highly integrated method of mask and silicon metrology. The aim of this integration is evaluating the performance of the silicon corresponding to Hotspot on a mask. It can use the mask shape of a large field, besides. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used in mask CD-SEM and silicon CD-SEM. Currently, as semiconductor manufacture moves towards even smaller feature size, this necessitates more aggressive optical proximity correction (OPC) to drive the super-resolution technology (RET). In other words, there is a trade-off between highly precise RET and mask manufacture, and this has a big impact on the semiconductor market that centers on the mask business. As an optimal solution to these issues, we provide a DFM solution that extracts 2-dimensional data for a more realistic and error-free simulation by reproducing accurately the contour of the actual mask, in addition to the simulation results from the mask data. On the other hand, there is roughness in the silicon form made from a mass-production line. Moreover, there is variation in the silicon form. For this reason, quantification of silicon form is important, in order to estimate the performance of a pattern. In order to quantify, the same form is equalized in two dimensions. And the method of evaluating based on the form is popular. In this study, we conducted experiments for averaging method of the pattern (Measurement Based Contouring) as two-dimensional mask and silicon evaluation technique. That is, observation of the identical position of a mask and a silicon was considered. The result proved its detection accuracy and reliability of variability on two-dimensional pattern (mask and silicon) and is adaptable to following fields of mask quality management. •Discrimination of nuisance defects for fine pattern. •Determination of two-dimensional variability of pattern. •Verification of the performance of the pattern of various kinds of Hotspots. In this report, we introduce the experimental results and the application. We expect that the mask measurement and the shape control on mask production will make a huge contribution to mask yield-enhancement and that the DFM solution for mask quality control process will become much more important technology than ever. It is very important to observe the form of the same location of Design, Mask, and Silicon in such a viewpoint. And we report it about algorithm of the image composition in Large Field.

Numerical and Experimental Study on Manufacture of a Novel High-Capacity Engine Oil Pan Subjected to Hydro-Mechanical Deep Drawing

NASA Astrophysics Data System (ADS)

Chen, D. Y.; Xu, Y.; Zhang, S. H.; El-Aty, A. Abd; Ma, Y.

2017-09-01

The oil pan is equipped at the bottom of engine crankcase of the automobile to prevent impurity and collect the lubrication oil from the surfaces of the engine which is helpful for heat dissipation and oxidation prevention. The present study aims at manufacturing a novel high-capacity engine oil pan, which is considered as a complex shaped component with features of thin wall, large size and asymmetric deep cavity through both numerical and experimental methods. The result indicated that it is difficult to form the current part through the common deep drawing process. Accordingly, the hydro-mechanical deep drawing technology was conducted, which consisted of two steps, previous local drawing and the final integral deep drawing with hydraulic pressure. The finite element analysis (FEA) was carried out to investigate the influence of initial blank dimension and the key process parameters such as loading path, draw-bead force and fillet radius on the formability of the sheet blank. Compared with the common deep drawing, the limit drawing ratio by hydro-mechanical deep drawing can be increased from 2.34 to 2.77, while the reduction in blank wall thickness can be controlled in the range of 28%. The formability is greatly improved without any defects such as crack and wrinkle by means of parameters optimisation. The results gained from simulation keep a reasonable agreement with that obtained from experiment trials.

Imaging performance improvement of coherent extreme-ultraviolet scatterometry microscope with high-harmonic-generation extreme-ultraviolet source

NASA Astrophysics Data System (ADS)

Mamezaki, Daiki; Harada, Tetsuo; Nagata, Yutaka; Watanabe, Takeo

2017-06-01

In extreme-ultraviolet (EUV) lithography, the development of a review apparatus for the EUV mask pattern at an exposure wavelength of 13.5 nm is required. The EUV mask is composed of an absorber pattern and a Mo/Si multilayer on a glass substrate. This mask pattern has a three-dimensional (3D) structure. The 3D structure would modulate the EUV reflection phase, which would cause focus and pattern shifts. Thus, the review of the EUV phase image is also important. We have developed a coherent EUV scatterometry microscope (CSM), which is a simple microscope without objective optics. The EUV phase and intensity images were reconstructed with diffraction images by ptychography. For a standalone mask review, the high-harmonic-generation (HHG) EUV source was employed. In this study, we updated the sample stage, pump-laser reduction system, and gas-pressure control system to reconstruct the image. As a result, an 88 nm line-and-space pattern and a cross-line pattern were reconstructed. In addition, a particle defect of 2 µm diameter was well reconstructed. This demonstrated the high capability of the standalone CSM, which can hence be used in factories, such as mask shops and semiconductor fabrication plants.

Clean induced feature CD shift of EUV mask

NASA Astrophysics Data System (ADS)

Nesládek, Pavel; Schedel, Thorsten; Bender, Markus

2016-05-01

EUV developed in the last decade to the most promising <7nm technology candidate. Defects are considered to be one of the most critical issues of the EUV mask. There are several contributors which make the EUV mask so different from the optical one. First one is the significantly more complicated mask stack consisting currently of 40 Mo/Si double layers, covered by Ru capping layer and TaN/TaO absorber/anti-reflective coating on top of the front face of the mask. Backside is in contrary to optical mask covered as well by conductive layer consisting of Cr or CrN. Second contributor is the fact that EUV mask is currently in contrary to optical mask not yet equipped with sealed pellicle, leading to much higher risk of mask contamination. Third reason is use of EUV mask in vacuum, possibly leading to deposition of vacuum contaminants on the EUV mask surface. Latter reason in combination with tight requirements on backside cleanliness lead to the request of frequent recleaning of the EUV mask, in order to sustain mask lifetime similar to that of optical mask. Mask cleaning process alters slightly the surface of any mask - binary COG mask, as well as phase shift mask of any type and naturally also of the EUV mask as well. In case of optical masks the changes are almost negligible, as the mask is exposed to max. 10-20 re-cleans within its life time. These modifications can be expressed in terms of different specified parameters, e.g. CD shift, phase/trans shift, change of the surface roughness etc. The CD shift, expressed as thinning (or exceptionally thickening) of the dark features on the mask is typically in order of magnitude 0.1nm per process run, which is completely acceptable for optical mask. Projected on the lifetime of EUV mask, assuming 100 clean process cycles, this will lead to CD change of about 10nm. For this reason the requirements for EUV mask cleaning are significantly tighter, << 0.1 nm per process run. This task will look even more challenging, when considering, that the tools for CD measurement at the EUV mask are identical as for optical mask. There is one aspect influencing the CD shift, which demands attention. The mask composition of the EUV mask is significantly different from the optical mask. More precisely there are 2 materials influencing the estimated CD in case of EUV mask, whereas there is one material only in case of optical masks, in first approximation. For optical masks, the CD changes can be attributed to modification of the absorber/ARC layer, as the quartz substrate can be hardly modified by the wet process. For EUV Masks chemical modification of the Ru capping layer - thinning, oxidization etc. are rather more probable and we need to take into account, how this effects can influence the CD measurement process. CD changes measured can be interpreted as either change in the feature size, or modification of the chemical nature of both absorber/ARC layer stack and the Ru capping layer. In our work we try to separate the effect of absorber and Ru/capping layer on the CD shift observed and propose independent way of estimation both parameters.

Porous CaP/silk composite scaffolds to repair femur defects in an osteoporotic model

PubMed Central

Cheng, Ning; Dai, Jing; Cheng, Xiangrong; Li, Shu’e; Miron, Richard J.; Wu, Tao; Chen, Wenli; Zhang, Yufeng

2018-01-01

The most common complication for patients with postmenopausal osteoporosis is bone-related defects and fractures. While routine medication has a high probability of undesirable side effects, new approaches have aimed to develop regeneration procedures that stimulate new bone formation while reversing bone loss. Recently, we have synthesized a new hybrid CaP/silk scaffold with a CaP-phase distribution and pore architecture better suited to facilitate cell differentiation and bone formation. The aim of the present study was to compare the involved remodeling process and therapeutic effect of porous CaP/silk composite scaffolds upon local implantation into osteoporotic defects. Wistar rats were used to induce postmenopausal osteoporotic model by bilateral ovariectomy. The pure silk and hybrid CaP/silk scaffolds were implanted into critical sized defects created in distal femoral epiphysis. After 14 and 28 days, the in vivo osteogenetic efficiency was evaluated by μCT analysis, hematoxylin and eosin staining, Safranin O staining, tartrate-resistant acid phosphatase staining, and immunohistochemical assessment. Animals with or without critical-sized defects were used as drill or blank controls, respectively. The osteoporotic defect model was well established with significantly decreased μCT parameters of BV/TV, Tb.N and increased Tb.Sp, porosity, combined with changes in histological observations. During the healing process, the critical-sized drill control defects failed to regenerate appreciable bone tissue, while more significantly increased bone formation and mineralization with dynamic scaffold degradation and decreased osteoclastic bone resorption could be detected within defects with hybrid CaP/silk scaffolds compared to pure silk scaffolds. PMID:23674058

Porous CaP/silk composite scaffolds to repair femur defects in an osteoporotic model.

PubMed

Cheng, Ning; Dai, Jing; Cheng, Xiangrong; Li, Shu'e; Miron, Richard J; Wu, Tao; Chen, Wenli; Zhang, Yufeng; Shi, Bin

2013-08-01

The most common complication for patients with postmenopausal osteoporosis is bone-related defects and fractures. While routine medication has a high probability of undesirable side effects, new approaches have aimed to develop regeneration procedures that stimulate new bone formation while reversing bone loss. Recently, we have synthesized a new hybrid CaP/silk scaffold with a CaP-phase distribution and pore architecture better suited to facilitate cell differentiation and bone formation. The aim of the present study was to compare the involved remodeling process and therapeutic effect of porous CaP/silk composite scaffolds upon local implantation into osteoporotic defects. Wistar rats were used to induce postmenopausal osteoporotic model by bilateral ovariectomy. The pure silk and hybrid CaP/silk scaffolds were implanted into critical sized defects created in distal femoral epiphysis. After 14 and 28 days, the in vivo osteogenetic efficiency was evaluated by μCT analysis, hematoxylin and eosin staining, Safranin O staining, tartrate-resistant acid phosphatase staining, and immunohistochemical assessment. Animals with or without critical-sized defects were used as drill or blank controls, respectively. The osteoporotic defect model was well established with significantly decreased μCT parameters of BV/TV, Tb.N and increased Tb.Sp, porosity, combined with changes in histological observations. During the healing process, the critical-sized drill control defects failed to regenerate appreciable bone tissue, while more significantly increased bone formation and mineralization with dynamic scaffold degradation and decreased osteoclastic bone resorption could be detected within defects with hybrid CaP/silk scaffolds compared to pure silk scaffolds.

Etch bias inversion during EUV mask ARC etch

NASA Astrophysics Data System (ADS)

Lajn, Alexander; Rolff, Haiko; Wistrom, Richard

2017-07-01

The introduction of EUV lithography to high volume manufacturing is now within reach for 7nm technology node and beyond (1), at least for some steps. The scheduling is in transition from long to mid-term. Thus, all contributors need to focus their efforts on the production requirements. For the photo mask industry, these requirements include the control of defectivity, CD performance and lifetime of their masks. The mask CD performance including CD uniformity, CD targeting, and CD linearity/ resolution, is predominantly determined by the photo resist performance and by the litho and etch processes. State-of-the-art chemically amplified resists exhibit an asymmetric resolution for directly and indirectly written features, which usually results in a similarly asymmetric resolution performance on the mask. This resolution gap may reach as high as multiple tens of nanometers on the mask level in dependence of the chosen processes. Depending on the printing requirements of the wafer process, a reduction or even an increase of this gap may be required. A potential way of tuning via the etch process, is to control the lateral CD contribution during etch. Aside from process tuning knobs like pressure, RF powers and gases, which usually also affect CD linearity and CD uniformity, the simplest knob is the etch time itself. An increased over etch time results in an increased CD contribution in the normal case. , We found that the etch CD contribution of ARC layer etch on EUV photo masks is reduced by longer over etch times. Moreover, this effect can be demonstrated to be present for different etch chambers and photo resists.

Detection algorithm for glass bottle mouth defect by continuous wavelet transform based on machine vision

NASA Astrophysics Data System (ADS)

Qian, Jinfang; Zhang, Changjiang

2014-11-01

An efficient algorithm based on continuous wavelet transform combining with pre-knowledge, which can be used to detect the defect of glass bottle mouth, is proposed. Firstly, under the condition of ball integral light source, a perfect glass bottle mouth image is obtained by Japanese Computar camera through the interface of IEEE-1394b. A single threshold method based on gray level histogram is used to obtain the binary image of the glass bottle mouth. In order to efficiently suppress noise, moving average filter is employed to smooth the histogram of original glass bottle mouth image. And then continuous wavelet transform is done to accurately determine the segmentation threshold. Mathematical morphology operations are used to get normal binary bottle mouth mask. A glass bottle to be detected is moving to the detection zone by conveyor belt. Both bottle mouth image and binary image are obtained by above method. The binary image is multiplied with normal bottle mask and a region of interest is got. Four parameters (number of connected regions, coordinate of centroid position, diameter of inner cycle, and area of annular region) can be computed based on the region of interest. Glass bottle mouth detection rules are designed by above four parameters so as to accurately detect and identify the defect conditions of glass bottle. Finally, the glass bottles of Coca-Cola Company are used to verify the proposed algorithm. The experimental results show that the proposed algorithm can accurately detect the defect conditions of the glass bottles and have 98% detecting accuracy.

A landmark effect in the perceived displacement of objects.

PubMed

Higgins, J Stephen; Wang, Ranxiao Frances

2010-01-01

Perceiving the displacement of an object after a visual distraction is an essential ability to interact with the world. Previous research has shown a bias to perceive the first object seen after a saccade as stable while the second one moving (landmark effect). The present study examines the generality and nature of this phenomenon. The landmark effect was observed in the absence of eye movements, when the two objects were obscured by a blank screen, a moving-pattern mask, or simply disappeared briefly before reappearing one after the other. The first reappearing object was not required to remain visible while the second object reappeared to induce the bias. The perceived direction of the displacement was mainly determined by the relative displacement of the two objects, suggesting that the landmark effect is primarily due to a landmark calibration mechanism.

Monoallelic mutation analysis (MAMA) for identifying germline mutations.

PubMed

Papadopoulos, N; Leach, F S; Kinzler, K W; Vogelstein, B

1995-09-01

Dissection of germline mutations in a sensitive and specific manner presents a continuing challenge. In dominantly inherited diseases, mutations occur in only one allele and are often masked by the normal allele. Here we report the development of a sensitive and specific diagnostic strategy based on somatic cell hybridization termed MAMA (monoallelic mutation analysis). We have demonstrated the utility of this strategy in two different hereditary colorectal cancer syndromes, one caused by a defective tumour suppressor gene on chromosome 5 (familial adenomatous polyposis, FAP) and the other caused by a defective mismatch repair gene on chromosome 2 (hereditary non-polyposis colorectal cancer, HNPCC).

Formability analysis of aluminum alloys through deep drawing process

NASA Astrophysics Data System (ADS)

Pranavi, U.; Janaki Ramulu, Perumalla; Chandramouli, Ch; Govardhan, Dasari; Prasad, PVS. Ram

2016-09-01

Deep drawing process is a significant metal forming process used in the sheet metal forming operations. From this process complex shapes can be manufactured with fewer defects. Deep drawing process has different effectible process parameters from which an optimum level of parameters should be identified so that an efficient final product with required mechanical properties will be obtained. The present work is to evaluate the formability of Aluminum alloy sheets using deep drawing process. In which effects of punch radius, lubricating conditions, die radius, and blank holding forces on deep drawing process observed for AA 6061 aluminum alloy sheet of 2 mm thickness. The numerical simulations are performed for deep drawing of square cups using three levels of aforesaid parameters like lubricating conditions and blank holding forces and two levels of punch radii and die radii. For numerical simulation a commercial FEM code is used in which Hollomon's power law and Hill's 1948 yield criterions are implemented. The deep drawing setup used in the FEM code is modeled using a CAD tool by considering the modeling requirements from the literature. Two different strain paths (150x150mm and 200x200mm) are simulated. Punch forces, thickness distributions and dome heights are evaluated for all the conditions. In addition failure initiation and propagation is also observed. From the results, by increasing the coefficient of friction and blank holding force, punch force, thickness distribution and dome height variations are observed. The comparison has done and the optimistic parameters were suggested from the results. From this work one can predict the formability for different strain paths without experimentation.

Inspection system qualification and integration into the mask manufacturing environment

NASA Astrophysics Data System (ADS)

LaVoy, Rosanne; Fujioka, Ron

1995-12-01

Integration of a mask inspection system into a manufacturing environment poses new challenges to both the inspection engineer and the equipment supplier. Traditional specifications (limited primarily to sensitivity and uptime) are no longer sufficient to successfully integrate a system into a 7 by 24 manufacturing area with multiple systems. Issues such as system sensitivity matching, sensitivity characterization by defect type, operator training and certification standards, and real-time SPC control of the systems must be addressed. This paper outlines some of the techniques Intel Mask Operation uses for integration of a new inspection system into the manufacturing line. Specifically moving a beta- site type tool out of the beta-site mode and into volume production. Examples are presented, including installation for manufacturing (including ergonomic modifications), techniques for system-to-system matching, use of SPC charts to monitor system performance, and operator training/certifications. Relationships between system PMs, or other environmental changes, and the system sensitivity SPC control charts also are discussed.

Neural circuitry of masked emotional face processing in youth with bipolar disorder, severe mood dysregulation, and healthy volunteers.

PubMed

Thomas, Laura A; Brotman, Melissa A; Bones, Brian L; Chen, Gang; Rosen, Brooke H; Pine, Daniel S; Leibenluft, Ellen

2014-04-01

Youth with bipolar disorder (BD) and those with severe, non-episodic irritability (severe mood dysregulation, SMD) show face-emotion labeling deficits. These groups differ from healthy volunteers (HV) in neural responses to emotional faces. It is unknown whether awareness is required to elicit these differences. We compared activation in BD (N=20), SMD (N=18), and HV (N=22) during "Aware" and "Non-aware" priming of shapes by emotional faces. Subjects rated how much they liked the shape. In aware, a face (angry, fearful, happy, neutral, blank oval) appeared (187 ms) before the shape. In non-aware, a face appeared (17 ms), followed by a mask (170 ms), and shape. A Diagnosis-by-Awareness-by-Emotion ANOVA was not significant. There were significant Diagnosis-by-Awareness interactions in occipital regions. BD and SMD showed increased activity for non-aware vs. aware; HV showed the reverse pattern. When subjects viewed angry or neutral faces, there were Emotion-by-Diagnosis interactions in face-emotion processing regions, including the L precentral gyrus, R posterior cingulate, R superior temporal gyrus, R middle occipital gyrus, and L medial frontal gyrus. Regardless of awareness, BD and SMD differ in activation patterns from HV and each other in multiple brain regions, suggesting that BD and SMD are distinct developmental mood disorders. Copyright © 2013 The Authors. Published by Elsevier Ltd.. All rights reserved.

Flotation separation and electrothermal atomic absorption spectrometric determination of thallium in wastewater samples.

PubMed

Hosseini, Mohammad Saeid; Chamsaz, Mahmoud; Raissi, Heidar; Naseri, Yousef

2006-01-01

The proposed method is a simple process for the determination of trace amount of thallium(I) in the environmental wastewater samples by electrothermal atomic absorption spectrometry. The wastewater samples were obtained from the environment of a cement plant and subjected to a simple treatment, such as adjusting pH and masking the interfering ions, to prepare for the flotation process in which the thallium(I) content was floated as an ion-association complex using iodide and Rhodamine B at the interface of aqueous/cyclohexane layers. The floated layer was then separated and dissolved in 2 ml of a solution, which was 1% to H2SO4 and 50% to methanol, respectively. Aliquots of 10-microl of this solution were subjected to the graphite furnace to determine the thallium(I) content. The flotation process can be carried in a weak acidic medium in which the interfering effects owing to certain metal ions were eliminated by masking them as neutral citrate chelates. The dynamic range for the determination was found to be 1.0 x 10(-8) - 1.0 x 10(-7) mol l(-1). The RSD was 3.2% and the DL was 2.5 x 10(-9) mol l(-1) (calculated as 3SD of the blank). The reliability of the method is demonstrated by the analysis of a synthetic wastewater in which the recovery was found to be 94%.

Polymer microfilters with nanostructured surfaces for the culture of circulating cancer cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Makarova, Olga V.; Adams, Daniel L.; Divan, Ralu

There is a critical need to improve the accuracy of drug screening and testing through the development of in vitro culture systems that more effectively mimic the in vivo environment. Surface topographical features on the nanoscale level, in short nanotopography, effect the cell growth patterns, and hence affect cell function in culture. We report the preliminary results on the fabrication, and subsequent cellular growth, of nanoscale surface topography on polymer microfilters using cell lines as a precursor to circulating tumor cells (CTCs). To create various nanoscale features on the microfilter surface, we used reactive ion etching (RIE) with and withoutmore » an etching mask. An anodized aluminum oxide (AAO) membrane fabricated directly on the polymer surface served as an etching mask. Polymer filters with a variety of modified surfaces were used to compare the effects on the culture of cancer cell lines in blank culture wells, with untreated microfilters or with RIE-treated microfilters. We then report the differences of cell shape, phenotype and growth patterns of bladder and glioblastoma cancer cell lines after isolation on the various types of material modifications. Our data suggest that RIE modified polymer filters can isolate model cell lines while retaining ell viability, and that the RIE filter modification allows T24 monolayering cells to proliferate as a structured cluster. Copyright 2016 The Authors. Published by Elsevier B.V. All rights reserved.« less

Tailor-welded blanks and their production

NASA Astrophysics Data System (ADS)

Yan, Qi

2005-01-01

Tailor welded blanks had been widely used in the automobile industry. A tailor welded blank consists of several flat sheets that were laser welded together before stamping. A combination of different materials, thickness, and coatings could be welded together to form a blank for stamping car body panels. As for the material for automobile industry, this technology was one of the development trend for automobile industry because of its weight reduction, safety improvement and economical use of materials. In this paper, the characters and production of tailor welded blanks in the market were discussed in detail. There had two major methods to produce tailor welded blanks. Laser welding would replace mesh seam welding for the production of tailor welded blanks in the future. The requirements on the edge preparation of unwelded blanks for tailor welded blanks were higher than the other steel processing technology. In order to produce the laser welded blank, there had the other process before the laser welding in the factory. In the world, there had three kinds of patterns for the large volume production of tailor welded blanks. In China, steel factory played the important role in the promotion of the application of tailor welded blanks. The competition for the supply of tailor welded blanks to the automobile industry would become fierce in the near future. As a result, the demand for the quality control on the production of tailor welded blanks would be the first priority concern for the factory.

Simulation of pattern and defect detection in periodic amplitude and phase structures using photorefractive four-wave mixing

NASA Astrophysics Data System (ADS)

Nehmetallah, Georges; Banerjee, Partha; Khoury, Jed

2015-03-01

The nonlinearity inherent in four-wave mixing in photorefractive (PR) materials is used for adaptive filtering. Examples include script enhancement on a periodic pattern, scratch and defect cluster enhancement, periodic pattern dislocation enhancement, etc. through intensity filtering image manipulation. Organic PR materials have large space-bandwidth product, which makes them useful in adaptive filtering techniques in quality control systems. For instance, in the case of edge enhancement, phase conjugation via four-wave mixing suppresses the low spatial frequencies of the Fourier spectrum of an aperiodic image and consequently leads to image edge enhancement. In this work, we model, numerically verify, and simulate the performance of a four wave mixing setup used for edge, defect and pattern detection in periodic amplitude and phase structures. The results show that this technique successfully detects the slightest defects clearly even with no enhancement. This technique should facilitate improvements in applications such as image display sharpness utilizing edge enhancement, production line defect inspection of fabrics, textiles, e-beam lithography masks, surface inspection, and materials characterization.

NHEXAS PHASE I ARIZONA STUDY--QA ANALYTICAL RESULTS FOR PESTICIDE METABOLITES IN BLANK SAMPLES

EPA Science Inventory

The Pesticide Metabolites in Blank Samples data set contains the analytical results of measurements of up to 4 pesticide metabolites in 3 blank samples from 3 households. Measurements were made in blank samples of urine. Blank samples were used to assess the potential for sampl...

NHEXAS PHASE I MARYLAND STUDY--QA ANALYTICAL RESULTS FOR METALS IN BLANKS

EPA Science Inventory

The Metals in Blanks data set contains the analytical results of measurements of up to 11 metals in 115 blank samples from 58 households. Measurements were made in blank samples of indoor and outdoor air, drinking water, beverages, urine, and blood. Blank samples were used to a...

NHEXAS PHASE I MARYLAND STUDY--QA ANALYTICAL RESULTS FOR PESTICIDES IN BLANKS

EPA Science Inventory

The Pesticides in Blanks data set contains the analytical results of measurements of up to 20 pesticides in 70 blank samples from 46 households. Measurements were made in blank samples of indoor air, dust, soil, drinking water, food, beverages, and blood serum. Blank samples we...

NHEXAS PHASE I MARYLAND STUDY--QA ANALYTICAL RESULTS FOR PESTICIDE METABOLITES IN BLANKS

EPA Science Inventory

The Pesticide Metabolites in Blanks data set contains the analytical results of measurements of up to 4 pesticide metabolites in 14 blank samples from 13 households. Measurements were made in blank samples of urine. Blank samples were used to assess the potential for sample con...

Efficient creation of dipolar coupled nitrogen-vacancy spin qubits in diamond

NASA Astrophysics Data System (ADS)

Jakobi, I.; Momenzadeh, S. A.; Fávaro de Oliveira, F.; Michl, J.; Ziem, F.; Schreck, M.; Neumann, P.; Denisenko, A.; Wrachtrup, J.

2016-09-01

Coherently coupled pairs or multimers of nitrogen-vacancy defect electron spins in diamond have many promising applications especially in quantum information processing (QIP) but also in nanoscale sensing applications. Scalable registers of spin qubits are essential to the progress of QIP. Ion implantation is the only known technique able to produce defect pairs close enough to allow spin coupling via dipolar interaction. Although several competing methods have been proposed to increase the resulting resolution of ion implantation, the reliable creation of working registers is still to be demonstrated. The current limitation are residual radiation-induced defects, resulting in degraded qubit performance as trade-off for positioning accuracy. Here we present an optimized estimation of nanomask implantation parameters that are most likely to produce interacting qubits under standard conditions. We apply our findings to a well-established technique, namely masks written in electron-beam lithography, to create coupled defect pairs with a reasonable probability. Furthermore, we investigate the scaling behavior and necessary improvements to efficiently engineer interacting spin architectures.

An intelligent system for real time automatic defect inspection on specular coated surfaces

NASA Astrophysics Data System (ADS)

Li, Jinhua; Parker, Johné M.; Hou, Zhen

2005-07-01

Product visual inspection is still performed manually or semi automatically in most industries from simple ceramic tile grading to complex automotive body panel paint defect and surface quality inspection. Moreover, specular surfaces present additional challenge to conventional vision systems due to specular reflections, which may mask the true location of objects and lead to incorrect measurements. There are some sophisticated visual inspection methods developed in recent years. Unfortunately, most of them are highly computational. Systems built on those methods are either inapplicable or very costly to achieve real time inspection. In this paper, we describe an integrated low-cost intelligent system developed to automatically capture, extract, and segment defects on specular surfaces with uniform color coatings. The system inspects and locates regular surface defects with lateral dimensions as small as a millimeter. The proposed system is implemented on a group of smart cameras using its on-board processing ability to achieve real time inspection. The experimental results on real test panels demonstrate the effectiveness and robustness of proposed system.

Growth of single-layer boron nitride dome-shaped nanostructures catalysed by iron clusters.

PubMed

Torre, A La; Åhlgren, E H; Fay, M W; Ben Romdhane, F; Skowron, S T; Parmenter, C; Davies, A J; Jouhannaud, J; Pourroy, G; Khlobystov, A N; Brown, P D; Besley, E; Banhart, F

2016-08-11

We report on the growth and formation of single-layer boron nitride dome-shaped nanostructures mediated by small iron clusters located on flakes of hexagonal boron nitride. The nanostructures were synthesized in situ at high temperature inside a transmission electron microscope while the e-beam was blanked. The formation process, typically originating at defective step-edges on the boron nitride support, was investigated using a combination of transmission electron microscopy, electron energy loss spectroscopy and computational modelling. Computational modelling showed that the domes exhibit a nanotube-like structure with flat circular caps and that their stability was comparable to that of a single boron nitride layer.

Broadband Optical Active Waveguides Written by Femtosecond Laser Pulses in Lithium Fluoride

NASA Astrophysics Data System (ADS)

Ismael, Chiamenti; Francesca, Bonfigli; Anderson, S. L. Gomes; Rosa, Maria Montereali; Larissa, N. da Costa; Hypolito, J. Kalinowski

2014-01-01

Broadband waveguiding through light-emitting strips directly written in a blank lithium fluoride crystal with a femtosecond laser is reported. Light guiding was observed at several optical wavelengths, from blue, 458 nm, to near-infrared, at 1550 nm. Visible photoluminescence spectra of the optically active F2 and F3+ color centers produced by the fs laser writing process were measured. The wavelength-dependent refractive index increase was estimated to be in the order of 10-3-10-4 in the visible and near-infrared spectral intervals, which is consistent with the stable formation of point defects in LiF.

Advanced in-production hotspot prediction and monitoring with micro-topography

NASA Astrophysics Data System (ADS)

Fanton, P.; Hasan, T.; Lakcher, A.; Le-Gratiet, B.; Prentice, C.; Simiz, J.-G.; La Greca, R.; Depre, L.; Hunsche, S.

2017-03-01

At 28nm technology node and below, hot spot prediction and process window control across production wafers have become increasingly critical to prevent hotspots from becoming yield-limiting defects. We previously established proof of concept for a systematic approach to identify the most critical pattern locations, i.e. hotspots, in a reticle layout by computational lithography and combining process window characteristics of these patterns with across-wafer process variation data to predict where hotspots may become yield impacting defects [1,2]. The current paper establishes the impact of micro-topography on a 28nm metal layer, and its correlation with hotspot best focus variations across a production chip layout. Detailed topography measurements are obtained from an offline tool, and pattern-dependent best focus (BF) shifts are determined from litho simulations that include mask-3D effects. We also establish hotspot metrology and defect verification by SEM image contour extraction and contour analysis. This enables detection of catastrophic defects as well as quantitative characterization of pattern variability, i.e. local and global CD uniformity, across a wafer to establish hotspot defect and variability maps. Finally, we combine defect prediction and verification capabilities for process monitoring by on-product, guided hotspot metrology, i.e. with sampling locations being determined from the defect prediction model and achieved prediction accuracy (capture rate) around 75%

Preliminary results for mask metrology using spatial heterodyne interferometry

NASA Astrophysics Data System (ADS)

Bingham, Philip R.; Tobin, Kenneth; Bennett, Marylyn H.; Marmillion, Pat

2003-12-01

Spatial heterodyne interferometry (SHI) is an imaging technique that captures both the phase and amplitude of a complex wavefront in a single high-speed image. This technology was developed at the Oak Ridge National Laboratory (ORNL) and is currently being implemented for semiconductor wafer inspection by nLine Corporation. As with any system that measures phase, metrology and inspection of surface structures is possible by capturing a wavefront reflected from the surface. The interpretation of surface structure heights for metrology applications can become very difficult with the many layers of various materials used on semiconductor wafers, so inspection (defect detection) has been the primary focus for semiconductor wafers. However, masks used for photolithography typically only contain a couple well-defined materials opening the doors to high-speed mask metrology in 3 dimensions in addition to inspection. Phase shift masks often contain structures etched out of the transparent substrate material for phase shifting. While these structures are difficult to inspect using only intensity, the phase and amplitude images captured with SHI can produce very good resolution of these structures. The phase images also provide depth information that is crucial for these phase shift regions. Preliminary testing has been performed to determine the feasibility of SHI for high-speed non-contact mask metrology using a prototype SHI system with 532 nm wavelength illumination named the Visible Alpha Tool (VAT). These results show that prototype SHI system is capable of performing critical dimension measurements on 400nm lines with a repeatability of 1.4nm and line height measurements with a repeatability of 0.26nm. Additionally initial imaging of an alternating aperture phase shift mask has shown the ability of SHI to discriminate between typical phase shift heights.

NHEXAS PHASE I REGION 5 STUDY--QA ANALYTICAL RESULTS FOR METALS IN BLANKS

EPA Science Inventory

This data set includes analytical results for measurements of metals in 205 blank samples and for particles in 64 blank samples. Measurements were made for up to 12 metals in blank samples of air, dust, soil, water, food and beverages, blood, hair, and urine. Blank samples were u...

Experimental research and numerical optimisation of multi-point sheet metal forming implementation using a solid elastic cushion system

NASA Astrophysics Data System (ADS)

Tolipov, A. A.; Elghawail, A.; Shushing, S.; Pham, D.; Essa, K.

2017-09-01

There is a growing demand for flexible manufacturing techniques that meet the rapid changes in customer needs. A finite element analysis numerical optimisation technique was used to optimise the multi-point sheet forming process. Multi-point forming (MPF) is a flexible sheet metal forming technique where the same tool can be readily changed to produce different parts. The process suffers from some geometrical defects such as wrinkling and dimpling, which have been found to be the cause of the major surface quality problems. This study investigated the influence of parameters such as the elastic cushion hardness, blank holder force, coefficient of friction, cushion thickness and radius of curvature, on the quality of parts formed in a flexible multi-point stamping die. For those reasons, in this investigation, a multipoint forming stamping process using a blank holder was carried out in order to study the effects of the wrinkling, dimpling, thickness variation and forming force. The aim was to determine the optimum values of these parameters. Finite element modelling (FEM) was employed to simulate the multi-point forming of hemispherical shapes. Using the response surface method, the effects of process parameters on wrinkling, maximum deviation from the target shape and thickness variation were investigated. The results show that elastic cushion with proper thickness and polyurethane with the hardness of Shore A90. It has also been found that the application of lubrication cans improve the shape accuracy of the formed workpiece. These final results were compared with the numerical simulation results of the multi-point forming for hemispherical shapes using a blank-holder and it was found that using cushion hardness realistic to reduce wrinkling and maximum deviation.

Impact of defective pixels in AMLCDs on the perception of medical images

NASA Astrophysics Data System (ADS)

Kimpe, Tom; Sneyders, Yuri

2006-03-01

With LCD displays, each pixel has its own individual transistor that controls the transmittance of that pixel. Occasionally, these individual transistors will short or alternatively malfunction, resulting in a defective pixel that always shows the same brightness. With ever increasing resolution of displays the number of defect pixels per display increases accordingly. State of the art processes are capable of producing displays with no more than one faulty transistor out of 3 million. A five Mega Pixel medical LCD panel contains 15 million individual sub pixels (3 sub pixels per pixel), each having an individual transistor. This means that a five Mega Pixel display on average will have 5 failing pixels. This paper investigates the visibility of defective pixels and analyzes the possible impact of defective pixels on the perception of medical images. JND simulations were done to study the effect of defective pixels on medical images. Our results indicate that defective LCD pixels can mask subtle features in medical images in an unexpectedly broad area around the defect and therefore may reduce the quality of diagnosis for specific high-demanding areas such as mammography. As a second contribution an innovative solution is proposed. A specialized image processing algorithm can make defective pixels completely invisible and moreover can also recover the information of the defect so that the radiologist perceives the medical image correctly. This correction algorithm has been validated with both JND simulations and psycho visual tests.

U.S.-MEXICO BORDER PROGRAM ARIZONA BORDER STUDY--QA ANALYTICAL RESULTS FOR METALS IN BLANK SAMPLES

EPA Science Inventory

The Metals in Blank Samples data set contains the analytical results of measurements of up to 27 metals in 52 blank samples. Measurements were made in blank samples of dust, indoor air, food, water, and dermal wipe residue. Blank samples were used to assess the potential for sa...

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2014-01-01

Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2016-01-01

Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

Standard-Size Blanks for Furniture and Cabinets

Treesearch

Philip A. Araman

1983-01-01

Blanks are rough-dimension parts of a specific size which may be solid or glued up; quality depends on the final use of the material. Standard-size blanks are blanks made to standard thicknesses, lengths, and widths for each desired quality. Blanks in a few standard sizes can be used to make the thousands of different size rough-dimension parts needed by a furniture or...

Repair of articular cartilage defects by tissue-engineered cartilage constructed with adipose-derived stem cells and acellular cartilaginous matrix in rabbits.

PubMed

Wang, Z J; An, R Z; Zhao, J Y; Zhang, Q; Yang, J; Wang, J B; Wen, G Y; Yuan, X H; Qi, X W; Li, S J; Ye, X C

2014-06-18

After injury, inflammation, or degeneration, articular cartilage has limited self-repair ability. We aimed to explore the feasibility of repair of articular cartilage defects with tissue-engineered cartilage constructed by acellular cartilage matrices (ACMs) seeded with adipose-derived stem cells (ADSCs). The ADSCs were isolated from 3-month-old New Zealand albino rabbit by using collagenase and cultured and amplified in vitro. Fresh cartilage isolated from adult New Zealand albino rabbit were freeze-dried for 12 h and treated with Triton X-100, DNase, and RNase to obtain ACMs. ADSCs were seeded in the acellular cartilaginous matrix at 2x10(7)/mL, and cultured in chondrogenic differentiation medium for 2 weeks to construct tissue-engineered cartilage. Twenty-four New Zealand white rabbits were randomly divided into A, B, and C groups. Engineered cartilage was transplanted into cartilage defect position of rabbits in group A, group B obtained ACMs, and group C did not receive any transplants. The rabbits were sacrificed in week 12. The restored tissue was evaluated using macroscopy, histology, immunohistochemistry, and transmission electron microscopy (TEM). In the tissue-engineered cartilage group (group A), articular cartilage defects of the rabbits were filled with chondrocyte-like tissue with smooth surface. Immunohistochemistry showed type II-collagen expression and Alcian blue staining was positive. TEM showed chondrocytes in the recesses, with plenty of secretary matrix particles. In the scaffold group (group B), the defect was filled with fibrous tissue. No repaired tissue was found in the blank group (group C). Tissue-engineered cartilage using ACM seeded with ADSCs can help repair articular cartilage defects in rabbits.

High throughput nanoimprint lithography for semiconductor memory applications

NASA Astrophysics Data System (ADS)

Ye, Zhengmao; Zhang, Wei; Khusnatdinov, Niyaz; Stachowiak, Tim; Irving, J. W.; Longsine, Whitney; Traub, Matthew; Fletcher, Brian; Liu, Weijun

2017-03-01

Imprint lithography is a promising technology for replication of nano-scale features. For semiconductor device applications, Canon deposits a low viscosity resist on a field by field basis using jetting technology. A patterned mask is lowered into the resist fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. There are two critical components to meeting throughput requirements for imprint lithography. Using a similar approach to what is already done for many deposition and etch processes, imprint stations can be clustered to enhance throughput. The FPA-1200NZ2C is a four station cluster system designed for high volume manufacturing. For a single station, throughput includes overhead, resist dispense, resist fill time (or spread time), exposure and separation. Resist exposure time and mask/wafer separation are well understood processing steps with typical durations on the order of 0.10 to 0.20 seconds. To achieve a total process throughput of 17 wafers per hour (wph) for a single station, it is necessary to complete the fluid fill step in 1.2 seconds. For a throughput of 20 wph, fill time must be reduced to only one 1.1 seconds. There are several parameters that can impact resist filling. Key parameters include resist drop volume (smaller is better), system controls (which address drop spreading after jetting), Design for Imprint or DFI (to accelerate drop spreading) and material engineering (to promote wetting between the resist and underlying adhesion layer). In addition, it is mandatory to maintain fast filling, even for edge field imprinting. In this paper, we address the improvements made in all of these parameters to first enable a 1.20 second filling process for a device like pattern and have demonstrated this capability for both full fields and edge fields. Non-fill defectivity is well under 1.0 defects/cm2 for both field types. Next, by further reducing drop volume and optimizing drop patterns, a fill time of 1.1 seconds was demonstrated.

Maskless, reticle-free, lithography

DOEpatents

Ceglio, N.M.; Markle, D.A.

1997-11-25

A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies. 7 figs.

Maskless, reticle-free, lithography

DOEpatents

Ceglio, Natale M.; Markle, David A.

1997-11-25

A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies.

Recombinant human osteogenic protein-1 (OP-1) stimulates periodontal wound healing in class III furcation defects.

PubMed

Giannobile, W V; Ryan, S; Shih, M S; Su, D L; Kaplan, P L; Chan, T C

1998-02-01

Osteogenic protein-1 (OP-1) is a member of the transforming growth factor beta superfamily and is a potent modulator of osteogenesis and bone cell differentiation. This preclinical study in dogs sought to assess the effects of OP-1 on periodontal wound healing in surgically created critical size Class III furcation defects. Eighteen male beagle dogs were subjected to the creation of bilateral mandibular 5 mm osseous defects. A split-mouth design was utilized which randomly assigned opposing quadrants to control therapy (surgery alone or collagen vehicle) or 1 of 3 ascending concentrations of OP-1 in a collagen vehicle (0.75 mg OP-1/g collagen, 2.5 mg/g, or 7.5 mg/g). Thus, 9 quadrants per test group received OP-1, 9 quadrants per control group received surgery alone, and 9 quadrants received collagen vehicle alone. Test articles were delivered by a surgeon masked to the treatment, and fluorogenic bone labels were injected at specified intervals post-treatment. Eight weeks after defect creation and OP-1 delivery, tissue blocks of the mandibulae were taken for masked histomorphometric analysis to assess parameters of periodontal regeneration (e.g., bone height, bone area, new attachment formation, and percent of defect filled with new bone). Histomorphometry revealed limited evidence of osteogenesis, cementogenesis, and new attachment formation in either vehicle or surgery-alone sites. In contrast, sites treated with all 3 concentrations of OP-1 showed pronounced stimulation of osteogenesis, regenerative cementum, and new attachment formation. Lesions treated with 7.5 mg/g of OP-1 in collagen regenerated 3.9+/-1.7 mm and 6.1+/-3.4 mm2 (mean +/-S.D.) of linear bone height and bone area, respectively. Furthermore, these differences were statistically different from both control therapies for all wound healing parameters (P < 0.0001). No significant increase in tooth root ankylosis was found among the treatment groups when compared to the surgery-alone group. We conclude that OP-1 offers promise as an attractive candidate for treating severe periodontal lesions.

Automatic OPC repair flow: optimized implementation of the repair recipe

NASA Astrophysics Data System (ADS)

Bahnas, Mohamed; Al-Imam, Mohamed; Word, James

2007-10-01

Virtual manufacturing that is enabled by rapid, accurate, full-chip simulation is a main pillar in achieving successful mask tape-out in the cutting-edge low-k1 lithography. It facilitates detecting printing failures before a costly and time-consuming mask tape-out and wafer print occur. The OPC verification step role is critical at the early production phases of a new process development, since various layout patterns will be suspected that they might to fail or cause performance degradation, and in turn need to be accurately flagged to be fed back to the OPC Engineer for further learning and enhancing in the OPC recipe. At the advanced phases of the process development, there is much less probability of detecting failures but still the OPC Verification step act as the last-line-of-defense for the whole RET implemented work. In recent publication the optimum approach of responding to these detected failures was addressed, and a solution was proposed to repair these defects in an automated methodology and fully integrated and compatible with the main RET/OPC flow. In this paper the authors will present further work and optimizations of this Repair flow. An automated analysis methodology for root causes of the defects and classification of them to cover all possible causes will be discussed. This automated analysis approach will include all the learning experience of the previously highlighted causes and include any new discoveries. Next, according to the automated pre-classification of the defects, application of the appropriate approach of OPC repair (i.e. OPC knob) on each classified defect location can be easily selected, instead of applying all approaches on all locations. This will help in cutting down the runtime of the OPC repair processing and reduce the needed number of iterations to reach the status of zero defects. An output report for existing causes of defects and how the tool handled them will be generated. The report will with help further learning and facilitate the enhancement of the main OPC recipe. Accordingly, the main OPC recipe can be more robust, converging faster and probably in a fewer number of iterations. This knowledge feedback loop is one of the fruitful benefits of the Automatic OPC Repair flow.

Numerical analysis of the flexible roll forming of an automotive component from high strength steel

NASA Astrophysics Data System (ADS)

Abeyrathna, B.; Abvabi, A.; Rolfe, B.; Taube, R.; Weiss, M.

2016-11-01

Conventional roll forming is limited to components with uniform cross-section; the recently developed flexible roll forming (FRF) process can be used to form components which vary in both width and depth. It has been suggested that this process can be used to manufacture automotive components from Ultra High Strength Steel (UHSS) which has limited tensile elongation. In the flexible roll forming process, the pre-cut blank is fed through a set of rolls; some rolls are computer-numerically controlled (CNC) to follow the 3D contours of the part and hence parts with a variable cross-section can be produced. This paper introduces a new flexible roll forming technique which can be used to form a complex shape with the minimum tooling requirements. In this method, the pre-cut blank is held between two dies and the whole system moves back and forth past CNC forming rolls. The forming roll changes its angle and position in each pass to incrementally form the part. In this work, the process is simulated using the commercial software package Copra FEA. The distribution of total strain and final part quality are investigated as well as related shape defects observed in the process. Different tooling concepts are used to improve the strain distribution and hence the part quality.

Evaluation of volatile organic compound (VOC) blank data and application of study reporting levels to groundwater data collected for the California GAMA Priority Basin Project, May 2004 through September 2010

USGS Publications Warehouse

Fram, Miranda S.; Olsen, Lisa D.; Belitz, Kenneth

2012-01-01

Volatile organic compounds (VOCs) were analyzed in quality-control samples collected for the California Groundwater Ambient Monitoring and Assessment (GAMA) Program Priority Basin Project. From May 2004 through September 2010, a total of 2,026 groundwater samples, 211 field blanks, and 109 source-solution blanks were collected and analyzed for concentrations of 85 VOCs. Results from analyses of these field and source-solution blanks and of 2,411 laboratory instrument blanks during the same time period were used to assess the quality of data for the 2,026 groundwater samples. Eighteen VOCs were detected in field blanks or source-solution blanks: acetone, benzene, bromodichloromethane, 2-butanone, carbon disulfide, chloroform, 1,1-dichloroethene, dichloromethane, ethylbenzene, tetrachloroethene, styrene, tetrahydrofuran, toluene, trichloroethene, trichlorofluoromethane, 1,2,4-trimethylbenzene, m- and p-xylenes, and o-xylene. The objective of the evaluation of the VOC-blank data was to determine if study reporting levels (SRLs) were needed for any of the VOCs detected in blanks to ensure the quality of the data from groundwater samples. An SRL is equivalent to a raised reporting level that is used in place of the reporting level used by the analyzing laboratory [long‑term method detection level (LT-MDL) or laboratory reporting level (LRL)] to reduce the probability of reporting false-positive detections. Evaluation of VOC-blank data was done in three stages: (1) identification of a set of representative quality‑control field blanks (QCFBs) to be used for calculation of SRLs and identification of VOCs amenable to the SRL approach, (2) evaluation of potential sources of contamination to blanks and groundwater samples by VOCs detected in field blanks, and (3) selection of appropriate SRLs from among four potential SRLs for VOCs detected in field blanks and application of those SRLs to the groundwater data. An important conclusion from this study is that to ensure the quality of the data from groundwater samples, it was necessary to apply different methods of determining SRLs from field blank data to different VOCs, rather than use the same method for all VOCs. Four potential SRL values were defined by using three approaches: two values were defined by using a binomial probability method based on one-sided, nonparametric upper confidence limits, one was defined as equal to the maximum concentration detected in the field blanks, and one was defined as equal to the maximum laboratory method detection level used during the period when samples were collected for the project. The differences in detection frequencies and concentrations among different types of blanks (laboratory instrument blanks, source-solution blanks, and field blanks collected with three different sampling equipment configurations) and groundwater samples were used to infer the sources and mechanisms of contamination for each VOC detection in field blanks. Other chemical data for the groundwater samples (oxidation-reduction state, co-occurrence of VOCs, groundwater age) and ancillary information about the well sites (land use, presence of known sources of contamination) were used to evaluate whether the patterns of detections of VOCs in groundwater samples before and after application of potential SRLs were plausible. On this basis, the appropriate SRL was selected for each VOC that was determined to require an SRL. The SRLs for ethylbenzene [0.06 microgram per liter (μg/L)], m- and p-xylenes (0.33 μg/L), o-xylene (0.12 μg/L), toluene (0.69 μg/L), and 1,2,4-trimethylbenzene (0.56 μg/L) corresponded to the highest concentrations detected in the QCFBs and were selected because they resulted in the most censoring of groundwater data. Comparisons of hydrocarbon ratios in groundwater samples and blanks and comparisons between detection frequencies of the five hydrocarbons in groundwater samples and different types of blanks suggested three dominant sources of contamination that affected groundwater samples and blanks: (1) ethylbenzene, m- and p-xylenes, o-xylene, and toluene from fuel or exhaust components sorbed onto sampling lines, (2) toluene from vials and the source blank water, and (3) 1,2,4-trimethylbenzene from materials used for collection of samples for radon-222 analysis.

7 CFR 201.35 - Blank spaces.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 7 Agriculture 3 2013-01-01 2013-01-01 false Blank spaces. 201.35 Section 201.35 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (Standards... REGULATIONS Labeling in General § 201.35 Blank spaces. Blank spaces on the label shall be deemed to imply the...

7 CFR 201.35 - Blank spaces.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 7 Agriculture 3 2010-01-01 2010-01-01 false Blank spaces. 201.35 Section 201.35 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (Standards... REGULATIONS Labeling in General § 201.35 Blank spaces. Blank spaces on the label shall be deemed to imply the...

7 CFR 201.35 - Blank spaces.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 7 Agriculture 3 2014-01-01 2014-01-01 false Blank spaces. 201.35 Section 201.35 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (Standards... REGULATIONS Labeling in General § 201.35 Blank spaces. Blank spaces on the label shall be deemed to imply the...

7 CFR 201.35 - Blank spaces.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 7 Agriculture 3 2012-01-01 2012-01-01 false Blank spaces. 201.35 Section 201.35 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (Standards... REGULATIONS Labeling in General § 201.35 Blank spaces. Blank spaces on the label shall be deemed to imply the...

7 CFR 201.35 - Blank spaces.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 7 Agriculture 3 2011-01-01 2011-01-01 false Blank spaces. 201.35 Section 201.35 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (Standards... REGULATIONS Labeling in General § 201.35 Blank spaces. Blank spaces on the label shall be deemed to imply the...

NHEXAS PHASE I REGION 5 STUDY--QA ANALYTICAL RESULTS FOR VOCS IN BLANKS

EPA Science Inventory

This data set includes analytical results for measurements of VOCs in 88 blank samples. Measurements were made for up to 23 VOCs in blank samples of air, water, and blood. Blank samples were used to assess the potential for sample contamination during collection, storage, shipmen...

NHEXAS PHASE I ARIZONA STUDY--QA ANALYTICAL RESULTS FOR PESTICIDES IN BLANK SAMPLES

EPA Science Inventory

The Pesticides in Blank Samples data set contains the analytical results of measurements of up to 4 pesticides in 43 blank samples from 29 households. Measurements were made in blank samples of dust, indoor and outdoor air, food and beverages, blood, urine, and dermal wipe resid...

Defect window analysis by using SEM-contour based shape quantifying method for sub-20nm node production

NASA Astrophysics Data System (ADS)

Hibino, Daisuke; Hsu, Mingyi; Shindo, Hiroyuki; Izawa, Masayuki; Enomoto, Yuji; Lin, J. F.; Hu, J. R.

2013-04-01

The impact on yield loss due to systematic defect which remains after Optical Proximity Correction (OPC) modeling has increased, and achieving an acceptable yield has become more difficult in the leading technology beyond 20 nm node production. Furthermore Process-Window has become narrow because of the complexity of IC design and less process margin. In the past, the systematic defects have been inspected by human-eyes. However the judgment by human-eyes is sometime unstable and not accurate. Moreover an enormous amount of time and labor will have to be expended on the one-by-one judgment for several thousands of hot-spot defects. In order to overcome these difficulties and improve the yield and manufacturability, the automated system, which can quantify the shape difference with high accuracy and speed, is needed. Inspection points could be increased for getting higher yield, if the automated system achieves our goal. Defect Window Analysis (DWA) system by using high-precision-contour extraction from SEM image on real silicon and quantifying method which can calculate the difference between defect pattern and non-defect pattern automatically, which was developed by Hitachi High-Technologies, has been applied to the defect judgment instead of the judgment by human-eyes. The DWA result which describes process behavior might be feedback to design or OPC or mask. This new methodology and evaluation results will be presented in detail in this paper.

X-Ray Diffraction Wafer Mapping Method for Rhombohedral Super-Hetero-Epitaxy

NASA Technical Reports Server (NTRS)

Park, Yoonjoon; Choi, Sang Hyouk; King, Glen C.; Elliott, James R.; Dimarcantonio, Albert L.

2010-01-01

A new X-ray diffraction (XRD) method is provided to acquire XY mapping of the distribution of single crystals, poly-crystals, and twin defects across an entire wafer of rhombohedral super-hetero-epitaxial semiconductor material. In one embodiment, the method is performed with a point or line X-ray source with an X-ray incidence angle approximating a normal angle close to 90 deg, and in which the beam mask is preferably replaced with a crossed slit. While the wafer moves in the X and Y direction, a narrowly defined X-ray source illuminates the sample and the diffracted X-ray beam is monitored by the detector at a predefined angle. Preferably, the untilted, asymmetric scans are of {440} peaks, for twin defect characterization.

Cognitive cladistics and cultural override in Hominid spatial cognition

PubMed Central

Haun, Daniel B. M.; Rapold, Christian J.; Call, Josep; Janzen, Gabriele; Levinson, Stephen C.

2006-01-01

Current approaches to human cognition often take a strong nativist stance based on Western adult performance, backed up where possible by neonate and infant research and almost never by comparative research across the Hominidae. Recent research suggests considerable cross-cultural differences in cognitive strategies, including relational thinking, a domain where infant research is impossible because of lack of cognitive maturation. Here, we apply the same paradigm across children and adults of different cultures and across all nonhuman great ape genera. We find that both child and adult spatial cognition systematically varies with language and culture but that, nevertheless, there is a clear inherited bias for one spatial strategy in the great apes. It is reasonable to conclude, we argue, that language and culture mask the native tendencies in our species. This cladistic approach suggests that the correct perspective on human cognition is neither nativist uniformitarian nor “blank slate” but recognizes the powerful impact that language and culture can have on our shared primate cognitive biases. PMID:17079489

Look before you leap: sensory memory improves decision making.

PubMed

Vlassova, Alexandra; Pearson, Joel

2013-09-01

Simple decisions require the processing and evaluation of perceptual and cognitive information, the formation of a decision, and often the execution of a motor response. This process involves the accumulation of evidence over time until a particular choice reaches a decision threshold. Using a random-dot-motion stimulus, we showed that simply delaying responses after the stimulus offset can almost double accuracy, even in the absence of new incoming visual information. However, under conditions in which the otherwise blank interval was filled with a sensory mask or concurrent working memory load was high, performance gains were lost. Further, memory and perception showed equivalent rates of evidence accumulation, suggesting a high-capacity memory store. We propose an account of continued evidence accumulation by sequential sampling from a simultaneously decaying memory trace. Memories typically decay with time, hence immediate inquiry trumps later recall from memory. However, the results we report here show the inverse: Inspecting a memory trumps viewing the actual object.

The application of porous tantalum cylinder to the repair of comminuted bone defects: a study of rabbit firearm injuries

PubMed Central

Ren, Bo; Zhai, Zhenbo; Guo, Kai; Liu, Yanpu; Hou, Weihuan; Zhu, Qingsheng; Zhu, Jinyu

2015-01-01

The aim of this study is to investigate the effect of porous tantalum material in repair tibial defects caused by firearm injuries in a rabbit model. A multifunctional biological impact machine was used to establish a rabbit tibial defect model of firearm injury. Porous tantalum rods were processed into a hollow cylinder. Kirschner wires were used for intramedullary fixation. We compared the differences of the bone ingrowth of the porous tantalum material by gross observations, X-rays and histological evaluations. The radiographic observations revealed that fibrous tissue covered the material surface after 4 weeks, and periosteal reactions and new bone callus extending materials appeared after 8 weeks. After 16 weeks, the calluses of the firearm injury group were completely wrapped around a porous tantalum material. The group with the highest Lane-Sandhu X-rays cores was the firearm injury and tantalum implant group, and the blank control group exhibited the lowest scores. The histological evaluations revealed that the presence of new bone around the biomaterial had grown into the porous tantalum. By the 16th week, the areas of bone tissue of the firearm injury group was significant higher than that of non-firearm injury group (P<0.05). The comminuted fractures treated with tantalum cylinders exhibited greater bone ingrowth in the firearm injury group. In conditions of firearm injuries, the porous tantalum biomaterial exhibited bone ingrowth that was beneficial to the treatment of bone defects. PMID:26131078

Method of Making Lightweight, Single Crystal Mirror

NASA Technical Reports Server (NTRS)

Bly, Vincent T. (Inventor)

2015-01-01

A method of making a mirror from a single crystal blank may include fine grinding top and bottom surfaces of the blank to be parallel. The blank may then be heat treated to near its melting temperature. An optical surface may be created on an optical side of the blank. A protector may be bonded to the optical surface. With the protector in place, the blank may be light weighted by grinding a non-optical surface of the blank using computer controlled grinding. The light weighting may include creating a structure having a substantially minimum mass necessary to maintain distortion of the mirror within a preset limit. A damaged layer of the non-optical surface caused by light weighting may be removed with an isotropic etch and/or repaired by heat treatment. If an oxide layer is present, the entire blank may then be etched using, for example, hydrofluoric acid. A reflecting coating may be deposited on the optical surface.

NHEXAS PHASE I ARIZONA STUDY--QA ANALYTICAL RESULTS FOR METALS IN BLANK SAMPLES

EPA Science Inventory

The Metals in Blank Samples data set contains the analytical results of measurements of up to 27 metals in 82 blank samples from 26 households. Measurements were made in blank samples of dust, indoor and outdoor air, personal air, food, beverages, blood, urine, and dermal wipe r...

Hydroforming Of Patchwork Blanks — Numerical Modeling And Experimental Validation

NASA Astrophysics Data System (ADS)

Lamprecht, Klaus; Merklein, Marion; Geiger, Manfred

2005-08-01

In comparison to the commonly applied technology of tailored blanks the concept of patchwork blanks offers a number of additional advantages. Potential application areas for patchwork blanks in automotive industry are e.g. local reinforcements of automotive closures, structural reinforcements of rails and pillars as well as shock towers. But even if there is a significant application potential for patchwork blanks in automobile production, industrial realization of this innovative technique is decelerated due to a lack of knowledge regarding the forming behavior and the numerical modeling of patchwork blanks. Especially for the numerical simulation of hydroforming processes, where one part of the forming tool is replaced by a fluid under pressure, advanced modeling techniques are required to ensure an accurate prediction of the blanks' forming behavior. The objective of this contribution is to provide an appropriate model for the numerical simulation of patchwork blanks' forming processes. Therefore, different finite element modeling techniques for patchwork blanks are presented. In addition to basic shell element models a combined finite element model consisting of shell and solid elements is defined. Special emphasis is placed on the modeling of the weld seam. For this purpose the local mechanical properties of the weld metal, which have been determined by means of Martens-hardness measurements and uniaxial tensile tests, are integrated in the finite element models. The results obtained from the numerical simulations are compared to experimental data from a hydraulic bulge test. In this context the focus is laid on laser- and spot-welded patchwork blanks.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Naulleau, Patrick; Mochi, Iacopo; Goldberg, Kenneth A.

Defect free masks remain one of the most significant challenges facing the commercialization of extreme ultraviolet (EUV) lithography. Progress on this front requires high-performance wavelength-specific metrology of EUV masks, including high-resolution and aerial-image microscopy performed near the 13.5 nm wavelength. Arguably the most cost-effective and rapid path to proliferating this capability is through the development of Fresnel zoneplate-based microscopes. Given the relative obscurity of such systems, however, modeling tools are not necessarily optimized to deal with them and their imaging properties are poorly understood. Here we present a modeling methodology to analyze zoneplate microscopes based on commercially available optical modelingmore » software and use the technique to investigate the imaging performance of an off-axis EUV microscope design. The modeling predicts that superior performance can be achieved by tilting the zoneplate, making it perpendicular to the chief ray at the center of the field, while designing the zoneplate to explicitly work in that tilted plane. Although the examples presented here are in the realm of EUV mask inspection, the methods described and analysis results are broadly applicable to zoneplate microscopes in general, including full-field soft-x-ray microscopes rou tinely used in the synchrotron community.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Naulleau, Patrick P.; Mochi, Iacopo; Goldberg, Kenneth A.

Defect free masks remain one of the most significant challenges facing the commercialization of extreme ultraviolet (EUV) lithography. Progress on this front requires high-performance wavelength-specific metrology of EUV masks, including high-resolution and aerial-image microscopy performed near the 13.5 nm wavelength. Arguably the most cost-effective and rapid path to proliferating this capability is through the development of Fresnel zoneplate-based microscopes. Given the relative obscurity of such systems, however, modeling tools are not necessarily optimized to deal with them and their imaging properties are poorly understood. Here we present a modeling methodology to analyze zoneplate microscopes based on commercially available optical modelingmore » software and use the technique to investigate the imaging performance of an off-axis EUV microscope design. The modeling predicts that superior performance can be achieved by tilting the zoneplate, making it perpendicular to the chief ray at the center of the field, while designing the zoneplate to explicitly work in that tilted plane. Although the examples presented here are in the realm of EUV mask inspection, the methods described and analysis results are broadly applicable to zoneplate microscopes in general, including full-field soft-x-ray microscopes routinely used in the synchrotron community.« less

Metal flow of a tailor-welded blank in deep drawing process

NASA Astrophysics Data System (ADS)

Yan, Qi; Guo, Ruiquan

2005-01-01

Tailor welded blanks were used in the automotive industry to consolidate parts, reduce weight, and increase safety. In recent years, this technology was developing rapidly in China. In Chinese car models, tailor welded blanks had been applied in a lot of automobile parts such as rail, door inner, bumper, floor panel, etc. Concerns on the properties of tailor welded blanks had become more and more important for automobile industry. A lot of research had shown that the strength of the welded seam was higher than that of the base metal, such that the weld failure in the aspect of strength was not a critical issue. However, formability of tailor welded blanks in the stamping process was complex. Among them, the metal flow of tailor welded blanks in the stamping process must be investigated thoroughly in order to reduce the scrap rate during the stamping process in automobile factories. In this paper, the behavior of metal flow for tailor welded blanks made by the laser welding process with two types of different thickness combinations were studied in the deep drawing process. Simulations and experiment verification of the movement of weld line for tailor welded blanks were discussed in detail. Results showed that the control on the movement of welded seam during stamping process by taking some measures in the aspect of blank holder was effective.

Multiple large infected scrotal sebaceous cysts masking Fournier's gangrene in a 32-year-old man

PubMed Central

Angus, William; Mistry, Rahul; Floyd, Michael S; Machin, Derek G

2012-01-01

Extensive large sebaceous cysts on the scotum are rare and present a problem only when infected or when cosmesis is deemed unacceptable by the patient. Fournier's gangrene is an infective condition with a high death rate. We describe a case of Fournier's gangrene in a patient masked by multiple large infected scrotal sebaceous cysts. A 32-year-old man with a history of alcohol dependency, cirrhosis and multiple scrotal sebaceous cysts presented with acute scrotal pain and erythema. Necrosis of the area became evident within 12 h of his admission and an emergency surgical debridement was performed. The wound was left open to heal via secondary intention over 4 weeks without complication. Fournier's gangrene is a rapidly progressive condition and early surgical debridement is crucial to achieve satisfactory outcomes. In this case, prompt intervention allowed a large scrotal defect to heal without the need for skin grafting. PMID:22669874

Titanium induced polarity inversion in ordered (In,Ga)N/GaN nanocolumns.

PubMed

Kong, X; Li, H; Albert, S; Bengoechea-Encabo, A; Sanchez-Garcia, M A; Calleja, E; Draxl, C; Trampert, A

2016-02-12

We report on the formation of polarity inversion in ordered (In,Ga)N/GaN nanocolumns grown on a Ti-masked GaN-buffered sapphire substrate by plasma assisted molecular beam epitaxy. High-resolution transmission electron microscopy and electron energy-loss spectroscopy reveal a stacking fault-like planar defect at the homoepitaxial GaN interface due to Ti incorporation, triggering the generation of N-polar domains in Ga-polar nanocolumns. Density functional theory calculations are applied to clarify the atomic configurations of a Ti monolayer occupation on the GaN (0002) plane and to prove the inversion effect. The polarity inversion leads to an enhanced indium incorporation in the subsequent (In,Ga)N segment of the nanocolumn. This study provides a deeper understanding of the effects of Ti mask in the well-controlled selective area growth of (In,Ga)N/GaN nanocolumns.

System 6: A pricing strategy for long blanks

Treesearch

Hugh W. Reynolds; Bruce G. Hansen; Bruce G. Hansen

1986-01-01

In System 6, small-diameter, low-grade hardwood timber is used to make blanks in standard sizes. Blanks are made in one thickness and one quality class but in all the standard lengths during each production run. The quantity of blanks per length can be varied, while keeping total yield high, by using proper production control techniques. However, when the percentage of...

The use of computational inspection to identify process window limiting hotspots and predict sub-15nm defects with high capture rate

NASA Astrophysics Data System (ADS)

Ham, Boo-Hyun; Kim, Il-Hwan; Park, Sung-Sik; Yeo, Sun-Young; Kim, Sang-Jin; Park, Dong-Woon; Park, Joon-Soo; Ryu, Chang-Hoon; Son, Bo-Kyeong; Hwang, Kyung-Bae; Shin, Jae-Min; Shin, Jangho; Park, Ki-Yeop; Park, Sean; Liu, Lei; Tien, Ming-Chun; Nachtwein, Angelique; Jochemsen, Marinus; Yan, Philip; Hu, Vincent; Jones, Christopher

2017-03-01

As critical dimensions for advanced two dimensional (2D) DUV patterning continue to shrink, the exact process window becomes increasingly difficult to determine. The defect size criteria shrink with the patterning critical dimensions and are well below the resolution of current optical inspection tools. As a result, it is more challenging for traditional bright field inspection tools to accurately discover the hotspots that define the process window. In this study, we use a novel computational inspection method to identify the depth-of-focus limiting features of a 10 nm node mask with 2D metal structures (single exposure) and compare the results to those obtained with a traditional process windows qualification (PWQ) method based on utilizing a focus modulated wafer and bright field inspection (BFI) to detect hotspot defects. The method is extended to litho-etch litho-etch (LELE) on a different test vehicle to show that overlay related bridging hotspots also can be identified.

Top-coatless 193nm positive-tone development immersion resist for logic application

NASA Astrophysics Data System (ADS)

Liu, Lian Cong; Yeh, Tsung Ju; Lin, Yeh-Sheng; Huang, Yu Chin; Kuo, Chien Wen; Huang, Wen Liang; Lin, Chia Hung; Yu, Chun Chi; Hsu, Ray; Wan, I.-Yuan; Lin, Jeff; Im, Kwang-Hwyi; Lim, Hae Jin; Jeon, Hyun K.; Suzuki, Yasuhiro; Xu, Cheng Bai

2015-03-01

In this paper, we summarize our development efforts for a top-coatless 193nm immersion positive tone development (PTD) contact hole (C/H) resist with improved litho and defect performances for logic application specifically with an advance node. The ultimate performance goal was to improve the depth of focus (DoF) margin, mask error enhancement factor (MEEF), critical dimension uniformity (CDU), contact edge roughness (CER), and defect performance. Also, the through pitch CD difference was supposed to be comparable to the previous control resist. Effects of polymer and PAG properties have been evaluated for this purpose. The material properties focused in the evaluation study were polymer activation energy (Ea), polymer solubility differentiated by polymerization process types, and diffusion length (DL) and acidity (pKa) of photoacid generator (PAG). Additionally, the impact of post exposure bake (PEB) temperature was investigated for process condition optimization. As a result of this study, a new resist formulation to satisfy all litho and defect performance was developed and production yield was further improved.

Quality of volatile organic compound data from groundwater and surface water for the National Water-Quality Assessment Program, October 1996–December 2008

USGS Publications Warehouse

Bender, David A.; Zogorski, John S.; Mueller, David K.; Rose, Donna L.; Martin, Jeffrey D.; Brenner, Cassandra K.

2011-01-01

This report describes the quality of volatile organic compound (VOC) data collected from October 1996 to December 2008 from groundwater and surface-water sites for the U.S. Geological Survey's National Water-Quality Assessment (NAWQA) Program. The VOC data described were collected for three NAWQA site types: (1) domestic and public-supply wells, (2) monitoring wells, and (3) surface-water sites. Contamination bias, based on the 90-percent upper confidence limit (UCL) for the 90th percentile of concentrations in field blanks, was determined for VOC samples from the three site types. A way to express this bias is that there is 90-percent confidence that this amount of contamination would be exceeded in no more than 10 percent of all samples (including environmental samples) that were collected, processed, shipped, and analyzed in the same manner as the blank samples. This report also describes how important native water rinsing may be in decreasing carryover contamination, which could be affecting field blanks. The VOCs can be classified into four contamination categories on the basis of the 90-percent upper confidence limit (90-percent UCL) concentration distribution in field blanks. Contamination category 1 includes compounds that were not detected in any field blanks. Contamination category 2 includes VOCs that have a 90-percent UCL concentration distribution in field blanks that is about an order of magnitude lower than the concentration distribution of the environmental samples. Contamination category 3 includes VOCs that have a 90-percent UCL concentration distribution in field blanks that is within an order of magnitude of the distribution in environmental samples. Contamination category 4 includes VOCs that have a 90-percent UCL concentration distribution in field blanks that is at least an order of magnitude larger than the concentration distribution of the environmental samples. Fifty-four of the 87 VOCs analyzed in samples from domestic and public-supply wells were not detected in field blanks (contamination category 1), and 33 VOC were detected in field blanks. Ten of the 33 VOCs had a 90-percent UCL concentration distribution in field blanks that was at least an order of magnitude lower than the concentration distribution in environmental samples (contamination category 2). These 10 VOCs may have had some contamination bias associated with the environmental samples, but the potential contamination bias was negligible in comparison to the environmental data; therefore, the field blanks were assumed to be representative of the sources of contamination bias affecting the environmental samples for these 10 VOCs. Seven VOCs had a 90-percent UCL concentration distribution of the field blanks that was within an order of magnitude of the concentration distribution of the environmental samples (contamination category 3). Sixteen VOCs had a 90-percent UCL concentration distribution in the field blanks that was at least an order of magnitude greater than the concentration distribution of the environmental samples (contamination category 4). Field blanks for these 16 VOCs appear to be nonrepresentative of the sources of contamination bias affecting the environmental samples because of the larger concentration distributions (and sometimes higher frequency of detection) in field blanks than in environmental samples. Forty-three of the 87 VOCs analyzed in samples from monitoring wells were not detected in field blanks (contamination category 1), and 44 VOCs were detected in field blanks. Eight of the 44 VOCs had a 90-percent UCL concentration distribution in field blanks that was at least an order of magnitude lower than concentrations in environmental samples (contamination category 2). These eight VOCs may have had some contamination bias associated with the environmental samples, but the potential contamination bias was negligible in comparison to the environmental data; therefore, the field blanks were assumed to be representative. Seven VOCs had a 90-percent UCL concentration distribution in field blanks that was of the same order of magnitude as the concentration distribution of the environmental samples (contamination category 3). Twenty-nine VOCs had a 90-percent UCL concentration distribution in the field blanks that was an order of magnitude greater than the distribution of the environmental samples (contamination category 4). Field blanks for these 29 VOCs appear to be nonrepresentative of the sources of contamination bias to the environmental samples. Fifty-four of the 87 VOCs analyzed in surface-water samples were not detected in field blanks (category 1), and 33 VOC were detected in field blanks. Sixteen of the 33 VOCs had a 90-percent UCL concentration distribution in field blanks that was at least an order of magnitude lower than the concentration distribution in environmental samples (contamination category 2). These 16 VOCs may have had some contamination bias associated with the environmental samples, but the potential contamination bias was negligible in comparison to the environmental data; therefore, the field blanks were assumed to be representative. Ten VOCs had a 90-percent UCL concentration distribution in field blanks that was similar to the concentration distribution of environmental samples (contamination category 3). Seven VOCs had a 90-percent UCL concentration distribution in the field blanks that was greater than the concentration distribution in environmental samples (contamination category 4). Field-blank samples for these seven VOCs appear to be nonrepresentative of the sources of contamination bias to the environmental samples. The relation between the detection of a compound in field blanks and the detection in subsequent environmental samples appears to be minimal. The median minimum percent effectiveness of native water rinsing is about 79 percent for the 19 VOCs detected in more than 5 percent of field blanks from all three site types. The minimum percent effectiveness of native water rinsing (10 percent) was for toluene in surface-water samples, likely because of the large detection frequency of toluene in surface-water samples (about 79 percent) and in the associated field-blank samples (46.5 percent). The VOCs that were not detected in field blanks (contamination category 1) from the three site types can be considered free of contamination bias, and various interpretations for environmental samples, such as VOC detection frequency at multiple assessment levels and comparisons of concentrations to benchmarks, are not limited for these VOCs. A censoring level for making comparisons at different assessment levels among environmental samples could be applied to concentrations of 9 VOCs in samples from domestic and public-supply wells, 16 VOCs in samples from monitoring wells, and 9 VOCs in surface-water samples to account for potential low-level contamination bias associated with these selected VOCs. Bracketing the potential contamination by comparing the detection and concentration statistics with no censoring applied to the potential for contamination bias on the basis of the 90-percent UCL for the 90th-percentile concentrations in field blanks may be useful when comparisons to benchmarks are done in a study. The VOCs that were not detected in field blanks (contamination category 1) from the three site types can be considered free of contamination bias, and various interpretations for environmental samples, such as VOC detection frequency at multiple assessment levels and comparisons of concentrations to benchmarks, are not limited for these VOCs. A censoring level for making comparisons at different assessment levels among environmental samples could be applied to concentrations of 9 VOCs in samples from domestic and public-supply wells, 16 VOCs in samples from monitoring wells, and 9 VOCs in surface-water samples to account for potential low-level contamination bias associated with these selected VOCs. Bracketing the potential contamination by comparing the detection and concentration statistics with no censoring applied to the potential for contamination bias on the basis of the 90-percent UCL for the 90th-percentile concentrations in field blanks may be useful when comparisons to benchmarks are done in a study.

Modified blank ammunition injuries.

PubMed

Ogunc, Gokhan I; Ozer, M Tahir; Coskun, Kagan; Uzar, Ali Ihsan

2009-12-15

Blank firing weapons are designed only for discharging blank ammunition cartridges. Because they are cost-effective, are easily accessible and can be modified to live firearms plus their unclear legal situation in Turkish Law makes them very popular in Turkey. 2004 through 2008, a total of 1115 modified blank weapons were seized in Turkey. Blank firing weapons are easily modified by owners, making them suitable for discharging live firearm ammunition or modified blank ammunitions. Two common methods are used for modification of blank weapons. After the modification, these weapons can discharge the live ammunition. However, due to compositional durability problems with these types of weapons; the main trend is to use the modified blank ammunitions rather than live firearm ammunition fired from modified blank firing weapons. In this study, two types of modified blank weapons and two types of modified blank cartridges were tested on three different target models. Each of the models' shooting side was coated with 1.3+/-2 mm thickness chrome tanned cowhide as a skin simulant. The first model was only coated with skin simulant. The second model was coated with skin simulant and 100% cotton police shirt. The third model was coated with skin simulant and jean denim. After the literature evaluation four high risky anatomic locations (the neck area; the eyes; the thorax area and inguinal area) were pointed out for the steel and lead projectiles are discharged from the modified blank weapons especially in close range (0-50 cm). The target models were designed for these anatomic locations. For the target models six Transparent Ballistic Candle blocks (TCB) were prepared and divided into two test groups. The first group tests were performed with lead projectiles and second group with steel projectile. The shortest penetration depth (lead projectile: 4.358 cm; steel projectile 8.032 cm) was recorded in the skin simulant and jean denim coated block for both groups. In both groups, the longest penetration depth (lead projectile: 6.434 cm; steel projectile 8.608 cm) was recorded in the only skin simulant coated block. And the penetration depth of skin simulant and 100% cotton police shirt coated model was 5.870 cm for lead projectile; 8.440 cm for steel projectile. According to penetration results, national and international legislations and production standards should be re-evaluated in order to prevent the modification of blank weapons and ammunitions. There are three methods for preventing modification of blank weapons: completely closed barrel structure; intersected restrain pieces application; eccentric barrel structure.

Design and evaluation of a field study on the contamination of selected volatile organic compounds and wastewater-indicator compounds in blanks and groundwater samples

USGS Publications Warehouse

Thiros, Susan A.; Bender, David A.; Mueller, David K.; Rose, Donna L.; Olsen, Lisa D.; Martin, Jeffrey D.; Bernard, Bruce; Zogorski, John S.

2011-01-01

The Field Contamination Study (FCS) was designed to determine the field processes that tend to result in clean field blanks and to identify potential sources of contamination to blanks collected in the field from selected volatile organic compounds (VOCs) and wastewater-indicator compounds (WICs). The VOCs and WICs analyzed in the FCS were detected in blanks collected by the U.S. Geological Survey (USGS) National Water-Quality Assessment (NAWQA) Program during 1996–2008 and 2002–08, respectively. To minimize the number of variables, the study required ordering of supplies just before sampling, storage of supplies and equipment in clean areas, and use of adequate amounts of purge-and-trap volatile-grade methanol and volatile pesticide-grade blank water (VPBW) to clean sampling equipment and to collect field blanks.Blanks and groundwater samples were collected during 2008–09 at 16 sites, which were a mix of water-supply and monitoring wells, located in 9 States. Five different sample types were collected for the FCS at each site: (1) a source-solution blank collected at the USGS National Water Quality Laboratory (NWQL) using laboratory-purged VPBW, (2) source-solution blanks collected in the field using laboratory-purged VPBW, (3) source-solution blanks collected in the field using field-purged VPBW, (4) a field blank collected using field-purged VPBW, and (5) a groundwater sample collected from a well. The source-solution blank and field-blank analyses were used to identify, quantify, and document extrinsic contamination and to help determine the sources and causes of data-quality problems that can affect groundwater samples.Concentrations of compounds detected in FCS analyses were quantified and results were stored in the USGS National Water Information System database after meeting rigorous identification and quantification criteria. The study also utilized information provided by laboratory analysts about evidence indicating the presence of selected compounds, using less rigorous identification criteria than is required for reporting data to the National Water Information System database. For the FCS, these data are considered adequate to indicate "evidence of presence," and were used only for diagnostic purposes. Evidence of VOCs and WICs at low concentrations near or less than the long-term method detection level can indicate a contamination problem that could affect future datasets if method detection levels were ever to be lowered.

Evaluation of Quality-Assurance/Quality-Control Data Collected by the U.S. Geological Survey from Wells and Springs between the Southern Boundary of the Idaho National Engineering and Environmental Laboratory and the Hagerman Area, Idaho, 1989 through 1995

DOE Office of Scientific and Technical Information (OSTI.GOV)

Williams, L.M.; Bartholomay, R.C.; Campbell, L.J.

1998-10-01

The U.S. Geological (USGS) and the Idaho Department of Water Resources, in cooperation with the U.S. Department of Energy, collected and analyzed water samples to monitor the water quality of the Snake River Plain aquifer from the southern boundary of the Idaho National Engineering and Environmental Laboratory to the Hagerman area, Idaho. Concurrently, replicate samples and blank samples were collected and analyzed as part of the quality-assurance/quality-control program. Samples were analyzed from inorganic constituents, gross radioactivity and radionuclides, organic constituents, and stable isotopes. To evaluate the precision of field and laboratory methods, analytical results of the water-quality and replicate samplesmore » were compared statistically for equivalence on the basis of the precision associated with each result. Statistical comparisons of the data indicated that 95 percent of the results of the replicate pairs were equivalent. Blank-sample analytical results indicated th at the inorganic blank water and volatile organic compound blank water from the USGS National Water Quality Laboratory and the distilled water from the Idaho Department of Water Resources were suitable for blanks; blank water from other sources was not. Equipment-blank analytical results were evaluated to determine if a bias had been introduced and possible sources of bias. Most equipment blanks were analyzed for trace elements and volatile organic compounds; chloroform was found in one equipment blank. Two of the equipment blanks were prepared after collection and analyses of the water-quality samples to determine whether contamination had been introduced during the sampling process. Results of one blank indicated that a hose used to divert water away from pumps and electrical equipment had contaminated the samples with some volatile organic compounds. Results of the other equipment blank, from the apparatus used to filter dissolved organic carbon samples, indicated that the filtering apparatus did not affect water-quality samples.« less

Epidermal growth factor in alkali-burned corneal epithelial wound healing.

PubMed

Singh, G; Foster, C S

1987-06-15

We conducted a double-masked study to evaluate the effect of epidermal growth factor on epithelial wound healing and recurrent erosions in alkali-burned rabbit corneas. Epithelial wounds 10 mm in diameter healed completely under the influence of topical epidermal growth factor, whereas the control corneas did not resurface in the center. On reversal of treatment, the previously nonhealing epithelial defects healed when treated with topical epidermal growth factor eyedrops. Conversely, the epidermal growth factor-treated and resurfaced corneas developed epithelial defects when treatment was discontinued. Histopathologic examination disclosed hyperplastic epithelium growing over the damaged stroma laden with polymorphonuclear leukocytes when treated with epidermal growth factor eyedrops, but it did not adhere to the underlying tissue. Hydropic changes were seen intracellularly as well as between the epithelial cells and the stroma.

Is resin infiltration an effective esthetic treatment for enamel development defects and white spot lesions? A systematic review.

PubMed

Borges, A B; Caneppele, T M F; Masterson, D; Maia, L C

2017-01-01

To determine if resin infiltration is an effective treatment for improving the esthetic appearance of tooth discoloration resulting from development defects of enamel (EDD) and white spot lesions (WSL) by means of a systematic review. A comprehensive search was performed in PubMed, Scopus, Web of Science, LILACS, BBO Library, Cochrane Library, and SIGLE, as well as in the abstracts of IADR conference, and in the clinical trials registry. Clinical studies in patients with whitish tooth discoloration, in which the resin infiltration technique was applied, were included. Color masking was the primary outcome. The methodological quality and risk of biases of included papers was assessed using MINORS criteria for non-randomized (NRS) comparative studies and Cochrane Collaboration for randomized clinical trials (RCT). From a total of 2930 articles, 17 were assessed for eligibility and 11 remained in the qualitative synthesis. Four NRS and seven RCT studies were selected, the latter consisting of four full-text studies and three conference abstracts. Two studies were excluded from the quality assessment, due to overlapping results. The number of participants (treated teeth) ranged from 18 to 21 (38-74) in the NRS, and 20-83 (20-231) in the RCT studies. Post-orthodontic WSL were the most frequent treated lesions. Initial condition was used as control in the NR studies. In the RCT, resin infiltration was compared to non treatment, remineralization, or bleaching. Overall, partial or complete color masking of affected teeth was reported immediately after resin infiltration. Only two studies followed original outcomes up to one year and reported maintenance of original color masking. Two NR studies were assessed as "moderate" and one as "high" quality. Two RCT were classified as "low" risk of bias in the chosen key domains. The remaining four studies were considered "unclear" or "high" risk of bias. Although the partial or total masking effect of enamel whitish discoloration has been shown with resin infiltration, there is no strong evidence to support this technique based on the present clinical studies. Enamel whitish discolorations in esthetically compromised areas are clinically undesirable. Minimally invasive approaches used as attempts to minimize the discoloration include the resin infiltration technique. The evidence for clinical recommendation of this technique is not strong, thus, further RCT studies with long-term follow-ups should be conducted. Copyright © 2016 Elsevier Ltd. All rights reserved.

Apatite-coated Silk Fibroin Scaffolds to Healing Mandibular Border Defects in Canines

PubMed Central

Zhao, Jun; Zhang, Zhiyuan; Wang, Shaoyi; Sun, Xiaojuan; Zhang, Xiuli; Chen, Jake; Kaplan, David L.; Jiang, Xinquan

2010-01-01

Tissue engineering has become a new approach for repairing bony defects. Highly porous osteoconductive scaffolds perform the important role for the success of bone regeneration. By biomimetic strategy, apatite-coated porous biomaterial based on silk fibroin scaffolds (SS) might provide an enhanced osteogenic environment for bone-related outcomes. To assess the effects of apatite-coated silk fibroin (mSS) biomaterials for bone healing as a tissue engineered bony scaffold, we explored a tissue engineered bony graft using mSS seeded with osteogenically induced autologous bone marrow stromal cells (bMSCs) to repair inferior mandibular border defects in a canine model. The results were compared with those treated with bMSCs/SS constructs, mSS alone, SS alone, autologous mandibular grafts and untreated blank defects. According to radiographic and histological examination, new bone formation was observed from 4 weeks post-operation, and the defect site was completely repaired after 12 months for the bMSCs/mSS group. In the bMSCs/SS group, new bone formation was observed with more residual silk scaffold remaining at the center of the defect compared with the bMSCs/mSS group. The engineered bone with bMSCs/mSS achieved satisfactory bone mineral densities (BMD) at 12 months post-operation close to those of normal mandible (p>0.05). The quantities of newly formed bone area for the bMSCs/mSS group was higher than the bMSCs/SS group (p<0.01), but no significant differences were found when compared with the autograft group (p>0.05). In contrast, bony defects remained in the center with undegraded silk fibroin scaffold and fibrous connective tissue, and new bone only formed at the periphery in the groups treated with mSS or SS alone. The results suggested apatite-coated silk fibroin scaffolds combined with bMSCs could be successfully used to repair mandibular critical size border defects and the premineralization of these porous silk fibroin protein scaffolds provided an increased osteoconductive environment for bMSCs to regenerate sufficient new bone tissue. PMID:19505603

Method of making dished ion thruster grids

NASA Technical Reports Server (NTRS)

Banks, B. A. (Inventor)

1975-01-01

A pair of flat grid blanks are clamped together at their edges with an impervious metal sheet on top. All of the blanks and sheets are dished simultaneously by forcing fluid to inflate an elastic sheet which contacts the bottom grid blank. A second impervious metal sheet is inserted between the two grid blanks if the grids have high percentage open areas. The dished grids are stress relieved simultaneously.

Printability of 1 x reticle defects for submicron design rules

NASA Astrophysics Data System (ADS)

Schurz, Dan L.; Flack, Warren W.; Newman, Gary

1997-02-01

As the push for improved resolution in wafer lithography intensifies and 0.18 micrometer devices are nearing production, the potential impact of subhalf micron reticle defects has become a growing concern. There have been several studies on the printability of subhalf-micron defects on high resolution reduction photolithography equipment. These studies have been extended to 1X lithography systems and more recently to advanced sub-micron 1X steppers. Previous studies have indicated that 0.20 micrometer opaque and 0.25 micrometer clear pinhole defects were at the margins of adversely impacting 0.65 micrometer lithography on a 1X stepper. However, due to the limited number of defects at these sizes on the reticle, definitive conclusions on printability could not be drawn. An additional study, using a three dimensional (3D) optical lithography simulation program, has shown defect size, proximity to an adjacent feature, and feature pitch to be significant factors contributing to reticle defect printability. Using the simulation findings as a guide, a new reticle was designed to contain an increased number of clear pinhole and opaque defects in the 0.15 to 0.30 micrometer range located in multiple pitches of both horizontal and vertical line/space pairs. Defect printability was determined using a 1X i-line projection stepper with focus and exposure optimized for nominal critical dimensions of 0.65 micrometer. The reticle and wafer defects were measured using low voltage SEM metrology. Simulation and experimental results have shown that pitch is the most significant contributor in the printability of clear pinhole, opaque, square and aspect ratio defects. In general, the impact of defect proximity to an adjacent feature is less extreme than the effect of pitch, but is more pronounced for clear pinhole defects. This study suggests that simulation can be a useful tool to help lithographers understand the behavior of reticle defects for particular layout design parameters. Consequently, simulation can be used to develop realistic reticle defect specifications with mask vendors, and improve cost-effectiveness. Defect printability simulation can also be used to predict the effect of known defects on existing reticles to determine if these reticles should be used for manufacturing.

Consolidation quality and mechanical performance of stamp formed tailored blanks produced by rapid AFP

NASA Astrophysics Data System (ADS)

Slange, T. K.; Warnet, L. L.; Grouve, W. J. B.; Akkerman, R.

2018-05-01

Stamp forming is a rapid manufacturing technology used to shape flat blanks of thermoplastic composite material into three-dimensional components. The combination with rapid AFP as blank manufacturing technology can further extend the applicability of stamp forming by allowing rapid lay-up of tailored blanks and offering partial preconsolidation. In an experimental study it is demonstrated that high quality laminates with good flexural strength can be obtained by following this process route. The consolidation of ply-drop regions is demonstrated by flat laminates with a thickness step. The influence of fiber orientations, blank-tooling misalignments and AFP tolerances is investigated.

Effect of Concentrated Growth Factor (CGF) on the Promotion of Osteogenesis in Bone Marrow Stromal Cells (BMSC) in vivo.

PubMed

Chen, Xia; Wang, Jian; Yu, Li; Zhou, Jia; Zheng, Danning; Zhang, Bo

2018-04-12

The therapeutic method traditionally used in bone defect reconstruction is autologous bone grafting. The most common problems affecting this type of repair approach are bone absorption and donor trauma. The approach taken in this study overcomes these problems. Bone marrow stromal cells (BMSCs) provided the crucial seed cells. Fibrin biological scaffolds were formed by combining the BMSCs with concentrated growth factor (CGF). BMSCs were isolated from Wistar rat femurs; CGF was prepared from rat heart blood. Five repair groups were created for comparative purposes: (A) CGF + BMSCs; (B) CGF; (C) collagen + BMSCs; (D) collagen; (E) blank. After three months, the rats were sacrificed, and histopathology and three-dimensional CT images produced. Bone regeneration was significantly higher in the (A) CGF + BMSC group; osteogenesis was lower in the (B) CGF and (C) collagen + BMSC groups, at very similar levels; the (D) collagen and (E) blank groups scored the lowest results. Our research suggests that combining CGF with BMSCs leads to the formation of fibrin scaffolds that have a powerful effect on osteogenesis as well as a subsidiary angiogenic effect. SEM images of the CGF scaffolds cultured with BMSCs confirmed good CGF biocompatibility. The superior osteoinductive activity of the CGF + BMSC combination makes it an excellent biomaterial for bone regeneration.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Naulleau, Patrick

With demonstrated resist resolution of 20 nm half pitch, the SEMATECH Berkeley BUV microfield exposure tool continues to push crucial advances in the areas of BUY resists and masks. The ever progressing shrink in computer chip feature sizes has been fueled over the years by a continual reduction in the wavelength of light used to pattern the chips. Recently, this trend has been threatened by unavailability of lens materials suitable for wavelengths shorter than 193 nm. To circumvent this roadblock, a reflective technology utilizing a significantly shorter extreme ultraviolet (EUV) wavelength (13.5 nm) has been under development for the pastmore » decade. The dramatic wavelength shrink was required to compensate for optical design limitations intrinsic in mirror-based systems compared to refractive lens systems. With this significant reduction in wavelength comes a variety of new challenges including developing sources of adequate power, photoresists with suitable resolution, sensitivity, and line-edge roughness characteristics, as well as the fabrication of reflection masks with zero defects. While source development can proceed in the absence of available exposure tools, in order for progress to be made in the areas of resists and masks it is crucial to have access to advanced exposure tools with resolutions equal to or better than that expected from initial production tools. These advanced development tools, however, need not be full field tools. Also, implementing such tools at synchrotron facilities allows them to be developed independent of the availability of reliable stand-alone BUY sources. One such tool is the SEMATECH Berkeley microfield exposure tool (MET). The most unique attribute of the SEMA TECH Berkeley MET is its use of a custom-coherence illuminator made possible by its implementation on a synchrotron beamline. With only conventional illumination and conventional binary masks, the resolution limit of the 0.3-NA optic is approximately 25 nm, however, with EUV not expected in production before the 22-nm half pitch node even finer resolution capabilities are now required from development tools. The SEMATECH Berkeley MET's custom-coherence illuminator allows it to be used with aggressive modified illumination enabling kJ factors as low as 0.25. Noting that the lithographic resolution of an exposure tool is defined as k{sub 1}{lambda}/NA, yielding an ultimate resolution limit of 11 nm. To achieve sub-20-nm aerial-image resolution while avoiding forbidden pitches on Manhattan-geometry features with the centrally-obscured MET optic, a 45-degree oriented dipole pupil fill is used. Figure 1 shows the computed aerial-image contrast as a function of half pitch for a dipole pupil fill optimized to print down to the 19-nm half pitch level. This is achieved with relatively uniform performance at larger dimensions. Using this illumination, printing down to the 20-nm half pitch level has been demonstrated in chemically amplified resists as shown in Fig. 2. The SEMATECH Berkeley MET tool plays a crucial role in the advancement of EUV resists. The unique programmable coherence properties of this tool enable it to achieve higher resolution than other EUV projection tools. As presented here, over the past year the tool has been used to demonstrate resist resolutions of 20 half pitch. Although not discussed here, because the Berkeley MET tool is a true projection lithography tool, it also plays a crucial role in advanced EUV mask research. Examples of the work done in this area include defect printability, mask architecture, and phase shift masks.« less

Testing glueline continuity in standard-size hardwood blanks by mechanical methods

Treesearch

David W. Patterson; Nathan D. Hesterman; Charles Gatchell

1991-01-01

Glueline continuity is very critical in standard-size hardwood blanks because the blanks are cut up into small furniture parts, and a small gap in the glueline of a blank may extend across the whole part—or a gap may appear as a crack in the final product. Strength is not a critical factor. The objective of this study was to determine if a gap in a glueline can be...

A graphical method for determining the dry-depositional component of aerosol samples and their field blanks

NASA Astrophysics Data System (ADS)

Huang, Suilou; Rahn, Kenneth A.; Arimoto, Richard

During the Atmosphere/Ocean Chemistry Experiment (AEROCE), field blanks of certain elements in aerosol samples occasionally increased abruptly, always during periods of unusually high atmospheric concentrations. We hypothesized that the anomalous blanks were created by coarse aerosol entering the sampling shelters and depositing onto the blank filters. If so, samples taken nearby should have been similarly affected. To test this hypothesis, we developed a simple graphical method in which elemental masses in field blanks are plotted against elemental masses in pumped samples, and zones of proportionality between the two are sought. Data from Bermuda and Mace Head (coastal western Ireland) confirmed that depositional zones did indeed appear, but only for coarse-particle elements and only under certain conditions. Actual increases of crustal and pollution-derived elements agreed well with values predicted from settling velocities and sampling rates: blanks increased up to an order of magnitude or more but samples by less than 1%. Marine elements behaved like crustal elements in most samples but occasionally were much more enriched: blanks increased up to 30-fold and samples up to about 3%. It thus appears that when coarse-particle elements are present in high concentrations, their field blanks and samples may be measurably affected by dry deposition. Depending on the elements of interest, this dry deposition may have to be measured and the concentrations corrected.

Effect of masking phase-only holograms on the quality of reconstructed images.

PubMed

Deng, Yuanbo; Chu, Daping

2016-04-20

A phase-only hologram modulates the phase of the incident light and diffracts it efficiently with low energy loss because of the minimum absorption. Much research attention has been focused on how to generate phase-only holograms, and little work has been done to understand the effect and limitation of their partial implementation, possibly due to physical defects and constraints, in particular as in the practical situations where a phase-only hologram is confined or needs to be sliced or tiled. The present study simulates the effect of masking phase-only holograms on the quality of reconstructed images in three different scenarios with different filling factors, filling positions, and illumination intensity profiles. Quantitative analysis confirms that the width of the image point spread function becomes wider and the image quality decreases, as expected, when the filling factor decreases, and the image quality remains the same for different filling positions as well. The width of the image point spread function as derived from different filling factors shows a consistent behavior to that as measured directly from the reconstructed image, especially as the filling factor becomes small. Finally, mask profiles of different shapes and intensity distributions are shown to have more complicated effects on the image point spread function, which in turn affects the quality and textures of the reconstructed image.

Fault tolerant system based on IDDQ testing

NASA Astrophysics Data System (ADS)

Guibane, Badi; Hamdi, Belgacem; Mtibaa, Abdellatif; Bensalem, Brahim

2018-06-01

Offline test is essential to ensure good manufacturing quality. However, for permanent or transient faults that occur during the use of the integrated circuit in an application, an online integrated test is needed as well. This procedure should ensure the detection and possibly the correction or the masking of these faults. This requirement of self-correction is sometimes necessary, especially in critical applications that require high security such as automotive, space or biomedical applications. We propose a fault-tolerant design for analogue and mixed-signal design complementary metal oxide (CMOS) circuits based on the quiescent current supply (IDDQ) testing. A defect can cause an increase in current consumption. IDDQ testing technique is based on the measurement of power supply current to distinguish between functional and failed circuits. The technique has been an effective testing method for detecting physical defects such as gate-oxide shorts, floating gates (open) and bridging defects in CMOS integrated circuits. An architecture called BICS (Built In Current Sensor) is used for monitoring the supply current (IDDQ) of the connected integrated circuit. If the measured current is not within the normal range, a defect is signalled and the system switches connection from the defective to a functional integrated circuit. The fault-tolerant technique is composed essentially by a double mirror built-in current sensor, allowing the detection of abnormal current consumption and blocks allowing the connection to redundant circuits, if a defect occurs. Spices simulations are performed to valid the proposed design.

Molecular dynamic simulation study of plasma etching L10 FePt media in embedded mask patterning (EMP) process

NASA Astrophysics Data System (ADS)

Zhu, Jianxin; Quarterman, P.; Wang, Jian-Ping

2017-05-01

Plasma etching process of single-crystal L10-FePt media [H. Wang et al., Appl. Phys. Lett. 102(5) (2013)] is studied using molecular dynamic simulation. Embedded-Atom Method [M. S. Daw and M. I. Baskes, Phy. Rev. B 29, 6443 (1984); X. W. Zhou, R. A. Johnson and H. N. G. Wadley, Phy. Rev. B 69, 144113 (2004)] is used to calculate the interatomic potential within atoms in FePt alloy, and ZBL potential [J.F. Ziegler, J. P. Biersack and U. Littmark, "The Stopping and Range of Ions in Matter," Volume 1, Pergamon,1985] in comparison with conventional Lennard-Jones "12-6" potential is applied to interactions between etching gas ions and metal atoms. It is shown the post-etch structure defects can include amorphized surface layer and lattice interstitial point defects that caused by etchant ions passed through the surface layer. We show that the amorphized or damaged FePt lattice surface layer (or "magnetic dead-layer") thickness after etching increases with ion energy for Ar ion impacts, but significantly small for He ions at up to 250eV ion energy. However, we showed that He sputtering creates more interstitial defects at lower energy levels and defects are deeper below the surface compared to Ar sputtering. We also calculate the interstitial defect level and depth as dependence on ion energy for both Ar and He ions. Media magnetic property loss due to these defects is also discussed.

Seeing Red and Shooting Blanks: A Study of Red Quasars And Blank Field X-Ray Sources

NASA Technical Reports Server (NTRS)

Oliversen, Ronald J. (Technical Monitor); Elvis, Martin

2003-01-01

The primary source catalog of 'blanks' (bright ROSAT sources with no optical counterparts) has been published in the Astrophysical Journal. The first follow-up paper has also been published. This paper used a combination of ROSAT, Chandra and ground based data to convincingly identify one of the blanks as a Ultra-luminous X-ray source (ULX) in a spiral galaxy. A paper detailing optical and near-IR imaging observations of the remaining sources is underway.

Experimental Research on the Elastic Deformation Mode of S235JR Rolled Steel Fastened between the Centers of a Universal Lathe

NASA Astrophysics Data System (ADS)

Tabacaru, LL; Axinte, E.; Musca, G.

2016-11-01

Elastic deformations of the technological system occur during the mechanical treatment of a blank, regardless of the manner in which it is fastened. The elastic deformation of the blank is significant especially when machining shaft-like parts. The purpose of our research is to compare the mathematical model of blank deformation to the experimental model when the blank, which is a part belonging to the shaft class, is fastened between centers.

PATTERNS OF FUNDUS AUTOFLUORESCENCE DEFECTS IN NEOVASCULAR AGE-RELATED MACULAR DEGENERATION SUBTYPES.

PubMed

Ozkok, Ahmet; Sigford, Douglas K; Tezel, Tongalp H

2016-11-01

To test define characteristic fundus autofluorescence patterns of different exudative age-related macular degeneration subtypes. Cross-sectional study. Fifty-two patients with choroidal neovascularization because of three different neovascular age-related macular degeneration subtypes were included in the study. Macular and peripheral fundus autofluorescence patterns of study subjects were compared in a masked fashion. Fundus autofluorescence patterns of all three neovascular age-related macular degeneration subtypes revealed similar patterns. However, peripapillary hypo-autofluorescence was more common among patients with polypoidal choroidal vasculopathy (88.2%) compared with patients with retinal angiomatous proliferation (12.5%) and patients without retinal angiomatous proliferation and polypoidal choroidal vasculopathy (21.1%) (P < 0.0001). Presence of peripapillary fundus autofluorescence defects in neovascular age-related macular degeneration maybe suggestive of polypoidal choroidal vasculopathy as a variant of neovascular age-related macular degeneration.

The information gained from witnesses' responses to an initial "blank" lineup.

PubMed

Palmer, Matthew A; Brewer, Neil; Weber, Nathan

2012-10-01

Wells ("The psychology of lineup identifications," Journal of Applied Social Psychology, 1984, 14, 89-103) proposed that a blank lineup (an initial lineup of known-to-be-innocent foils) can be used to screen eyewitnesses; witnesses who chose from a blank lineup (initial choosers) were more likely to make an error on a second lineup that contained a suspect than were witnesses who rejected a blank lineup (initial nonchoosers). Recent technological advances (e.g., computer-administered lineups) may overcome many of the practical difficulties cited as a barrier to the use of blank lineups. Our research extended knowledge about the blank lineup procedure by investigating the underlying causes of the difference in identification performance between initial choosers and initial nonchoosers. Studies 1a and 1b (total, N = 303) demonstrated that initial choosers were more likely to reject a second lineup than initial nonchoosers and witnesses who did not view a blank lineup, implying that cognitive biases (e.g., confirmation bias and commitment effects) influenced initial choosers' identification decisions. In Study 2 (N = 200), responses on a forced-choice identification test provided evidence that initial choosers have, on average, poorer memories for the culprit than do initial nonchoosers. We also investigated the usefulness of blank lineups for interpreting identification evidence. Diagnosticity ratios suggested that suspect identifications made by initial nonchoosers (cf. initial choosers) should have a greater impact on estimates of the likely guilt of the suspect. Furthermore, for initial nonchoosers, higher confidence in blank lineup rejections was associated with higher diagnosticity for subsequent suspect identifications. These results have implications for policy to guide the collection and interpretation of identification evidence. PsycINFO Database Record (c) 2012 APA, all rights reserved.

Piezoelectric resonator assembly with thin molybdenum mounting clips

DOEpatents

Peters, R. Donald

1981-01-01

A resonator mounting assembly wherein the resonator blank is mounted agai an essentially planar surface presented by a plurality of peripherally disposed mounting clips and bonded to this surface to provide substantially all the mechanical support for the blank in a direction normal to the major faces of the resonator blank, while being flexible in the directions parallel to said major faces so as to minimize radial stresses on the resonator blank, particularly during thermal cycling of the resonator assembly. The clips are fabricated of a low thermal expansion material, such as molybdenum, which also has considerable yield strength after exposure to processing temperatures; the bonding of the clips to the edges of the resonator blank can be achieved by a polyimide containing electrically conductive particles.

Influence of preconsolidation on consolidation quality after stamp forming of C/PEEK composites

NASA Astrophysics Data System (ADS)

Slange, T. K.; Warnet, L.; Grouve, W. J. B.; Akkerman, R.

2016-10-01

Stamp forming is a rapid manufacturing technology used to shape flat blanks of thermoplastic composite material into three-dimensional components. Currently, expensive autoclave and press consolidation are used to preconsolidate blanks. This study investigates the influence of preconsolidation on final consolidation quality after stamp forming and explores the potential of alternative blank manufacturing methods that could reduce part costs. Blanks were manufactured using various blank manufacturing methods and subsequently were stamp formed. The consolidation quality both before and after stamp forming was compared, where the focus was on void content as the main measure for consolidation quality. The void content was characterized through thickness and density measurements, as well as by microscopy analysis. Results indicate that preconsolidation quality does have an influence on the final consolidation quality. This is due to the severe deconsolidation and limited reconsolidation during stamp forming. Nevertheless, the potential of automated fiber placement and ultrasonic spot welding as alternative blank manufacturing methods was demonstrated.

Aerial imaging technology for photomask qualification: from a microscope to a metrology tool

NASA Astrophysics Data System (ADS)

Garetto, Anthony; Scherübl, Thomas; Peters, Jan Hendrik

2012-09-01

Photomasks carry the structured information of the chip designs printed with lithography scanners onto wafers. These structures, for the most modern technologies, are enlarged by a factor of 4 with respect to the final circuit design, and 20-60 of these photomasks are needed for the production of a single completed chip used, for example, in computers or cell phones. Lately, designs have been reported to be on the drawing board with close to 100 of these layers. Each of these photomasks will be reproduced onto the wafer several hundred times and typically 5000-50 000 wafers will be produced with each of them. Hence, the photomasks need to be absolutely defect-free to avoid any fatal electrical shortcut in the design or drastic performance degradation. One well-known method in the semiconductor industry is to analyze the aerial image of the photomask in a dedicated tool referred to as Aerial Imaging Measurement System, which emulates the behavior of the respective lithography scanner used for the imaging of the mask. High-end lithography scanners use light with a wavelength of 193 nm and high numerical apertures (NAs) of 1.35 utilizing a water film between the last lens and the resist to be illuminated (immersion scanners). Complex illumination shapes enable the imaging of structures well below the wavelength used. Future lithography scanners will work at a wavelength of 13.5 nm [extreme ultraviolet (EUV)] and require the optical system to work with mirrors in vacuum instead of the classical lenses used in current systems. The exact behavior of these systems is emulated by the Aerial Image Measurement System (AIMS™; a Trademark of Carl Zeiss). With these systems, any position of the photomask can be imaged under the same illumination condition used by the scanners, and hence, a prediction of the printing behavior of any structure can be derived. This system is used by mask manufacturers in their process flow to review critical defects or verify defect repair success. In this paper, we give a short introduction into the lithography roadmap driving the development cycles of the AIMS systems focusing primarily on the complexity of the structures to be reviewed. Second, we describe the basic principle of the AIMS technology and how it is used. The last section is dedicated to the development of the latest generation of the AIMS for EUV, which is cofinanced by several semiconductor companies in order to close a major gap in the mask manufacturing infrastructure and the challenges to be met.

Overlay degradation induced by film stress

NASA Astrophysics Data System (ADS)

Huang, Chi-hao; Liu, Yu-Lin; Luo, Shing-Ann; Yang, Mars; Yang, Elvis; Hung, Yung-Tai; Luoh, Tuung; Yang, T. H.; Chen, K. C.

2017-03-01

The semiconductor industry has continually sought the approaches to produce memory devices with increased memory cells per memory die. One way to meet the increasing storage capacity demand and reduce bit cost of NAND flash memories is 3D stacked flash cell array. In constructing 3D NAND flash memories, increasing the number of stacked layers to build more memory cell number per unit area necessitates many high-aspect-ratio etching processes accordingly the incorporation of thick and unique etching hard-mask scheme has been indispensable. However, the ever increasingly thick requirement on etching hard-mask has made the hard-mask film stress control extremely important for maintaining good process qualities. The residual film stress alters the wafer shape consequently several process impacts have been readily observed across wafer, such as wafer chucking error on scanner, film peeling, materials coating and baking defects, critical dimension (CD) non-uniformity and overlay degradation. This work investigates the overlay and residual order performance indicator (ROPI) degradation coupling with increasingly thick advanced patterning film (APF) etching hard-mask. Various APF films deposited by plasma enhanced chemical vapor deposition (PECVD) method under different deposition temperatures, chemicals combinations, radio frequency powers and chamber pressures were carried out. And -342MPa to +80MPa film stress with different film thicknesses were generated for the overlay performance study. The results revealed the overlay degradation doesn't directly correlate with convex or concave wafer shapes but the magnitude of residual APF film stress, while increasing the APF thickness will worsen the overlay performance and ROPI strongly. High-stress APF film was also observed to enhance the scanner chucking difference and lead to more serious wafer to wafer overlay variation. To reduce the overlay degradation from ever increasingly thick APF etching hard-mask, optimizing the film stress of APF is the most effective way and high order overlay compensation is also helpful.

3D finite element modelling of sheet metal blanking process

NASA Astrophysics Data System (ADS)

Bohdal, Lukasz; Kukielka, Leon; Chodor, Jaroslaw; Kulakowska, Agnieszka; Patyk, Radoslaw; Kaldunski, Pawel

2018-05-01

The shearing process such as the blanking of sheet metals has been used often to prepare workpieces for subsequent forming operations. The use of FEM simulation is increasing for investigation and optimizing the blanking process. In the current literature a blanking FEM simulations for the limited capability and large computational cost of the three dimensional (3D) analysis has been largely limited to two dimensional (2D) plane axis-symmetry problems. However, a significant progress in modelling which takes into account the influence of real material (e.g. microstructure of the material), physical and technological conditions can be obtained by using 3D numerical analysis methods in this area. The objective of this paper is to present 3D finite element analysis of the ductile fracture, strain distribution and stress in blanking process with the assumption geometrical and physical nonlinearities. The physical, mathematical and computer model of the process are elaborated. Dynamic effects, mechanical coupling, constitutive damage law and contact friction are taken into account. The application in ANSYS/LS-DYNA program is elaborated. The effect of the main process parameter a blanking clearance on the deformation of 1018 steel and quality of the blank's sheared edge is analyzed. The results of computer simulations can be used to forecasting quality of the final parts optimization.

Evidence That Masking of Synapsis Imperfections Counterbalances Quality Control to Promote Efficient Meiosis

PubMed Central

Mlynarczyk-Evans, Susanna; Roelens, Baptiste; Villeneuve, Anne M.

2013-01-01

Reduction in ploidy to generate haploid gametes during sexual reproduction is accomplished by the specialized cell division program of meiosis. Pairing between homologous chromosomes and assembly of the synaptonemal complex at their interface (synapsis) represent intermediate steps in the meiotic program that are essential to form crossover recombination-based linkages between homologs, which in turn enable segregation of the homologs to opposite poles at the meiosis I division. Here, we challenge the mechanisms of pairing and synapsis during C. elegans meiosis by disrupting the normal 1∶1 correspondence between homologs through karyotype manipulation. Using a combination of cytological tools, including S-phase labeling to specifically identify X chromosome territories in highly synchronous cohorts of nuclei and 3D rendering to visualize meiotic chromosome structures and organization, our analysis of trisomic (triplo-X) and polyploid meiosis provides insight into the principles governing pairing and synapsis and how the meiotic program is “wired” to maximize successful sexual reproduction. We show that chromosomes sort into homologous groups regardless of chromosome number, then preferentially achieve pairwise synapsis during a period of active chromosome mobilization. Further, comparisons of synapsis configurations in triplo-X germ cells that are proficient or defective for initiating recombination suggest a role for recombination in restricting chromosomal interactions to a pairwise state. Increased numbers of homologs prolong markers of the chromosome mobilization phase and/or boost germline apoptosis, consistent with triggering quality control mechanisms that promote resolution of synapsis problems and/or cull meiocytes containing synapsis defects. However, we also uncover evidence for the existence of mechanisms that “mask” defects, thus allowing resumption of prophase progression and survival of germ cells despite some asynapsis. We propose that coupling of saturable masking mechanisms with stringent quality controls maximizes meiotic success by making progression and survival dependent on achieving a level of synapsis sufficient for crossover formation without requiring perfect synapsis. PMID:24339786

Land cover and vegetation data from an ecological survey of "key habitat" landscapes in England, 1992-1993

NASA Astrophysics Data System (ADS)

Wood, Claire M.; Bunce, Robert G. H.; Norton, Lisa R.; Smart, Simon M.; Barr, Colin J.

2018-05-01

Since 1978, a series of national surveys (Countryside Survey, CS) have been carried out by the Centre for Ecology and Hydrology (CEH) (formerly the Institute of Terrestrial Ecology, ITE) to gather data on the natural environment in Great Britain (GB). As the sampling framework for these surveys is not optimised to yield data on rarer or more localised habitats, a survey was commissioned by the then Department of the Environment (DOE, now the Department for Environment, Food and Rural Affairs, DEFRA) in the 1990s to carry out additional survey work in English landscapes which contained semi-natural habitats that were perceived to be under threat, or which represented areas of concern to the ministry. The landscapes were lowland heath, chalk and limestone (calcareous) grasslands, coasts and uplands. The information recorded allowed an assessment of the extent and quality of a range of habitats defined during the project, which can now be translated into standard UK broad and priority habitat classes. The survey, known as the "Key Habitat Survey", followed a design which was a series of gridded, stratified, randomly selected 1 km squares taken as representative of each of the four landscape types in England, determined from statistical land classification and geological data ("spatial masks"). The definitions of the landscapes are given in the descriptions of the spatial masks, along with definitions of the surveyed habitats. A total of 213 of the 1 km2 square sample sites were surveyed in the summers of 1992 and 1993, with information being collected on vegetation species, land cover, landscape features and land use, applying standardised repeatable methods. The database contributes additional information and value to the long-term monitoring data gathered by the Countryside Survey and provides a valuable baseline against which future ecological changes may be compared, offering the potential for a repeat survey. The data were analysed and described in a series of contract reports and are summarised in the present paper, showing for example that valuable habitats were restricted in all landscapes, with the majority located within protected areas of countryside according to different UK designations. The dataset provides major potential for analyses, beyond those already published, for example in relation to climate change, agri-environment policies and land management. Precise locations of the plots are restricted, largely for reasons of landowner confidentiality. However, the representative nature of the dataset makes it highly valuable for evaluating the status of ecological elements within the associated landscapes surveyed. Both land cover data and vegetation plot data were collected during the surveys in 1992 and 1993 and are available via the following DOI: https://doi.org/10.5285/7aefe6aa-0760-4b6d-9473-fad8b960abd4. The spatial masks are also available from https://doi.org/10.5285/dc583be3-3649-4df6-b67e-b0f40b4ec895.

Effect of a freeze-dried CMC/PLGA microsphere matrix of rhBMP-2 on bone healing.

PubMed

Schrier, J A; Fink, B F; Rodgers, J B; Vasconez, H C; DeLuca, P P

2001-10-07

The hypothesis of this research was that implants of poly(lactide-co-glycolide) (PLGA) microspheres loaded with bone morphogenetic protein-2 (rhBMP-2) and distributed in a freeze-dried carboxymethylcellulose (CMC) matrix would produce more new bone than would matrix implants of non-protein-loaded microspheres or matrix implants of only CMC. To test this hypothesis it was necessary to fashion microsphere-loaded CMC implants that were simple to insert, fit precisely into a defect, and would not elicit swelling. Microspheres were produced via a water-in-oil-in-water double-emulsion system and were loaded with rhBMP-2 by soaking them in a buffered solution of the protein at a concentration of 5.4 mg protein per gram of PLGA. Following recovery of the loaded microspheres by lyophilization, matrices for implantation were prepared by lyophilizing a suspension of the microspheres in 2% CMC in flat-bottom tissue culture plates. Similar matrices were made with 2% CMC and with 2% CMC containing blank microspheres. A full-thickness calvarial defect model in New Zealand white rabbits was used to assess bone growth. Implants fit the defect well, allowing for direct application. Six weeks postsurgery, defects were collected and processed for undecalcified histology. In vitro, 60% of the loaded rhBMP-2 released from devices or microspheres in 5 to 7 days, with the unembedded microspheres releasing faster than those embedded in CMC. In vivo, the rhBMP-2 microspheres greatly enhanced bone healing, whereas nonloaded PLGA microspheres in the CMC implants had little effect. The results showed that a lyophilized device of rhBMP-2/PLGA microspheres in CMC was an effective implantable protein-delivery system for use in bone repair.

Engineered Fibrin Gels for Parallel Stimulation of Mesenchymal Stem Cell Proangiogenic and Osteogenic Potential

PubMed Central

Murphy, Kaitlin C.; Hughbanks, Marissa L.; Binder, Bernard Y.K.; Vissers, Caroline B.; Leach, J. Kent

2014-01-01

Mesenchymal stem/stromal cells (MSCs) are under examination for use in cell therapies to repair bone defects resulting from trauma or disease. MSCs secrete proangiogenic cues and can be induced to differentiate into bone-forming osteoblasts, yet there is limited evidence that these events can be achieved in parallel. Manipulation of the cell delivery vehicle properties represents a candidate approach for directing MSC function in bone healing. We hypothesized that the biophysical properties of a fibrin gel could simultaneously regulate the proangiogenic and osteogenic potential of entrapped MSCs. Fibrin gels were formed by supplementation with NaCl (1.2, 2.3, and 3.9% w/v) to modulate gel biophysical properties without altering protein concentrations. MSCs entrapped in 1.2% w/v NaCl gels were the most proangiogenic in vitro, yet cells in 3.9% w/v gels exhibited the greatest osteogenic response. Compared to the other groups, MSCs entrapped in 2.3% w/v gels provided the best balance between proangiogenic potential, osteogenic potential, and gel contractility. The contribution of MSCs to bone repair was then examined when deployed in 2.3% w/v NaCl gels and implanted into an irradiated orthotopic bone defect. Compared to acellular gels after 3 weeks of implantation, defects treated with MSC-loaded fibrin gels exhibited significant increases in vessel density, early osteogenesis, superior morphology, and increased cellularity of repair tissue. Defects treated with MSC-loaded gels exhibited increased bone formation after 12 weeks compared to blank gels. These results confirm that fibrin gel properties can be modulated to simultaneously promote both the proangiogenic and osteogenic potential of MSCs, and fibrin gels modified by supplementation with NaCl are promising carriers for MSCs to stimulate bone repair in vivo. PMID:25527322

[Effect of the compound of poly lactic-co-glycolic acid and bone marrow stromal cells modified by osteoprotegerin gene on the periodontal regeneration in Beagle dog periodontal defects].

PubMed

Zhou, Wei; Zhao, Chun-Hui; Mei, Ling-Xuan

2010-06-01

To evaluate the effect of the osteoprotegerin (OPG) gene-modified autologous bone marrow stromal cells (BMSCs) on regeneration of periodontal defects, and to provide new experimental evidence to explore the gene therapy for periodontal disease. pSecTag2/B-opg was transduced into BMSCs by lipofectamine 2000. The expression of OPG protein in the BMSCs was detected by immunocytochemistry and Western blot. Inverted phase contrast microscope and scanning electron microscopy (SEM) were used to observe the morphology and proliferation of the BMSCs(OPG) on on the surface of the poly lactic-co-glycolic (PLGA). Horizontal alveolar bone defect (4 mmx4 mmx 3 mm) were surgically created in the buccal aspect of the mandibular premolar, and were randomly assigned to receive BMSCs(OPG)-PLGA (cells/material/OPG), BMSCs-PLGA (cells/material), PLGA (material), or root planning only (blank control). The animals were euthanized at 6 weeks post surgery for histological analysis. The height of new alveolar bone and cementum and the formation of new connective tissue were analyzed and compared. All data were statistically analyzed using the q test. The BMSCs transfected by human OPG gene can highly express OPG protein. SEM observations demonstrated that BMSCs(OPG) were able to proliferate and massively colonize on the scaffolds structure. After 6 weeks, the height of new alveolar bone and cementum and the formation of new connective tissue were significantly greater in the experimental group than in the control groups (P < 0.05). BMSCs(OPG)-PLGA can significantly promote the regeneration of dog's periodontal bone defects. Gene therapy utilizing OPG may offer the potential for periodontal tissue engineering applications.

47 CFR 73.646 - Telecommunications Service on the Vertical Blanking Interval and in the Visual Signal.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 47 Telecommunication 4 2013-10-01 2013-10-01 false Telecommunications Service on the Vertical Blanking Interval and in the Visual Signal. 73.646 Section 73.646 Telecommunication FEDERAL COMMUNICATIONS....646 Telecommunications Service on the Vertical Blanking Interval and in the Visual Signal. (a...

Quantitative phase retrieval with arbitrary pupil and illumination

DOE PAGES

Claus, Rene A.; Naulleau, Patrick P.; Neureuther, Andrew R.; ...

2015-10-02

We present a general algorithm for combining measurements taken under various illumination and imaging conditions to quantitatively extract the amplitude and phase of an object wave. The algorithm uses the weak object transfer function, which incorporates arbitrary pupil functions and partially coherent illumination. The approach is extended beyond the weak object regime using an iterative algorithm. Finally, we demonstrate the method on measurements of Extreme Ultraviolet Lithography (EUV) multilayer mask defects taken in an EUV zone plate microscope with both a standard zone plate lens and a zone plate implementing Zernike phase contrast.

Studies of the Effects of Control Bandwidth and Dark-Hole Size on the HCIT Contrast Performance

NASA Technical Reports Server (NTRS)

Sidick, Erkin; Shaklan, Stuart; Balasubramanian, Kunjithapatha; Cady, Eric

2015-01-01

We have carried out both theoretical and experimental studies of the sensitivity of dark hole contrast to the control bandwidth and dark-hole dimensions in high-contrast broadband stellar coronagraphy. We have evaluated the performance of DM actuator solutions in the presence of occulting mask defects using one to five 2% -wide bands spanning a 10% bandpass. We have also investigated the dependence of the HCIT contrast performance on the size of dark -hole area including large dark holes formed at the Nyquist limit of the DM.

Studies of the effects of control bandwidth and dark-hole size on the HCIT contrast performance

NASA Astrophysics Data System (ADS)

Sidick, Erkin; Shaklan, Stuart; Balasubramanian, Kunjithapatham; Cady, Eric

2015-09-01

We have carried out both theoretical and experimental studies of the sensitivity of dark hole contrast to the control bandwidth and dark-hole dimensions in high-contrast broadband stellar coronagraphy. We have evaluated the performance of DM actuator solutions in the presence of occulting mask defects using one to five 2%-wide bands spanning a 10% bandpass. We have also investigated the dependence of the HCIT contrast performance on the size of dark-hole area including large dark holes formed at the Nyquist limit of the DM.

Ethmoidal sinus adenocarcinoma with orbital invasion.

PubMed

Koukoulomatis, P; Charakidas, A; Papakrivopoulos, A; Giotakis, I

2001-01-01

To report a rare case of massive ethmoidal adenocarcinoma with orbital invasion but minimal ophthalmic symptoms on presentation. Case report of a 69-year-old, otherwise healthy, retired carpenter who was referred for treatment of bilateral senile cataract. A relative afferent pupillary defect and sectorial disc atrophy on ophthalmic examination led to further investigation and identification of an extensive ethmoidal neoplasm with orbital invasion. An incisional biopsy was performed and histopathologic examination revealed an adenocarcinoma of low-grade malignancy. Ethmoidal adenocarcinomas with orbital involvement may occasionally be relatively asymptomatic and masked by coexisting ocular disease.

Review of Trace-Element Field-Blank Data Collected for the California Groundwater Ambient Monitoring and Assessment (GAMA) Program, May 2004-January 2008

USGS Publications Warehouse

Olsen, Lisa D.; Fram, Miranda S.; Belitz, Kenneth

2010-01-01

Trace-element quality-control samples (for example, source-solution blanks, field blanks, and field replicates) were collected as part of a statewide investigation of groundwater quality in California, known as the Priority Basins Project of the Groundwater Ambient Monitoring and Assessment (GAMA) Program. The GAMA Priority Basins Project is being conducted by the U.S. Geological Survey (USGS) in cooperation with the California State Water Resources Control Board (SWRCB) to assess and monitor the quality of groundwater resources used for drinking-water supply and to improve public knowledge of groundwater quality in California. Trace-element field blanks were collected to evaluate potential bias in the corresponding environmental data. Bias in the environmental data could result from contamination in the field during sample collection, from the groundwater coming into contact with contaminants on equipment surfaces or from other sources, or from processing, shipping, or analyzing the samples. Bias affects the interpretation of environmental data, particularly if any constituents are present solely as a result of extrinsic contamination that would have otherwise been absent from the groundwater that was sampled. Field blanks were collected, analyzed, and reviewed to identify and quantify extrinsic contamination bias. Data derived from source-solution blanks and laboratory quality-control samples also were considered in evaluating potential contamination bias. Eighty-six field-blank samples collected from May 2004 to January 2008 were analyzed for the concentrations of 25 trace elements. Results from these field blanks were used to interpret the data for the 816 samples of untreated groundwater collected over the same period. Constituents analyzed were aluminum (Al), antimony (Sb), arsenic (As), barium (Ba), beryllium (Be), boron (B), cadmium (Cd), chromium (Cr), cobalt (Co), copper (Cu), iron (Fe), lead (Pb), lithium (Li), manganese (Mn), mercury (Hg), molybdenum (Mo), nickel (Ni), selenium (Se), silver (Ag), strontium (Sr), thallium (Tl), tungsten (W), uranium (U), vanadium (V), and zinc (Zn). The detection frequency and the 90th percentile concentration at greater than 90 percent confidence were determined from the field-blank data for each trace element, and these results were compared to each constituent's long-term method detection level (LT-MDL) to determine whether a study reporting level (SRL) was necessary to ensure that no more than 10 percent of the detections in groundwater samples could be attributed solely to contamination bias. Only two of the trace elements analyzed, Li and Se, had zero detections in the 86 field blanks. Ten other trace elements (Sb, As, Be, B, Cd, Co, Mo, Ag, Tl, and U) were detected in fewer than 5 percent of the field blanks. The field-blank results for these constituents did not necessitate establishing SRLs. Of the 13 constituents that were detected in more than 5 percent of the field blanks, six (Al, Ba, Cr, Mn, Hg, and V) had field-blank results that indicated a need for SRLs that were at or below the highest laboratory reporting levels (LRL) used during the sampling period; these SRLs were needed for concentrations between the LT-MDLs and LRLs. The other seven constituents with detection frequencies above 5 percent (Cu, Fe, Pb, Ni, Sr, W, and Zn) had field-blank results that necessitated SRLs greater than the highest LRLs used during the study period. SRLs for these seven constituents, each set at the 90th percentile of their concentrations in the field blanks, were at least an order of magnitude below the regulatory thresholds established for drinking water for health or aesthetic purposes; therefore, reporting values below the SRLs as less than or equal to (=) the measured value would not prevent the identification of values greater than the drinking-water thresholds. The SRLs and drinking-water thresholds, respectively, for these 7 trace elements are Cu (1.7 ?g/L and 1,300

Method for forming a liquid cooled airfoil for a gas turbine

DOEpatents

Grondahl, Clayton M.; Willmott, Leo C.; Muth, Myron C.

1981-01-01

A method for forming a liquid cooled airfoil for a gas turbine is disclosed. A plurality of holes are formed at spaced locations in an oversized airfoil blank. A pre-formed composite liquid coolant tube is bonded into each of the holes. The composite tube includes an inner member formed of an anti-corrosive material and an outer member formed of a material exhibiting a high degree of thermal conductivity. After the coolant tubes have been bonded to the airfoil blank, the airfoil blank is machined to a desired shape, such that a portion of the outer member of each of the composite tubes is contiguous with the outer surface of the machined airfoil blank. Finally, an external skin is bonded to the exposed outer surface of both the machined airfoil blank and the composite tubes.

AcrySof Natural SN60AT versus AcrySof SA60AT intraocular lens in patients with color vision defects.

PubMed

Raj, Shetal M; Vasavada, Abhay R; Nanavaty, Mayank A

2005-12-01

To determine whether implantation of the AcrySof Natural intraocular lens (IOL) worsened the severity of existing color deficit in congenital partial red-green color deficient individuals (CPRG). A prospective controlled randomized double-masked analysis of 30 consecutive patients with CPRG defect and bilateral cataracts received a Natural IOL (test group) in 1 eye and a single-piece AcrySof IOL (control group) in the other eye. Patients were tested unilaterally to detect CPRG defect using Ishihara pseudoisochromatic plates and the Farnsworth D-15 test. Plates 1 to 21 measured the Ishihara error score; plates 22 to 25 indicated severity of defect based on clarity of both numerals as partial mild/moderate (both visible), partial severe defect (only 1 visible). The D-15 test is based on number of diametrical crossings on the circular diagram; severity is graded as mild (1 crossing), moderate (2 crossings), or severe (>2 crossings). Tests were performed before and after IOL implantation at 1, 3, and 6 months. At mean follow-up of 6.13 months +/- 1.2 (SD), analysis of variance test judged the difference in error scores and cross tabulation represented change in number of diametrical crossings. The mean age was 62.3 +/- 8.5 years. All patients were men. Before IOL implantation, all patients had moderate CPRG defect on both tests. The Ishihara error score in the test and control groups did not reveal statistically significant differences (P = .505 and P = .119, respectively). With D-15, none of the patients in the test or control group showed >2 crossings. The implantation of AcrySof Natural IOL did not worsen the preexisting severity of color defect in CPRG individuals.

Seeing Red and Shooting Blanks: Study of Red Quasars and Blank X-Ray Sources

NASA Technical Reports Server (NTRS)

Oliversen, Ronald (Technical Monitor); Elvis, Martin

2005-01-01

A major paper describing the technique and providing a list of 'blanks' was published in the Astrophysical Journal (abstract below). The results revealed a fascinating trove of novel X-ray sources: high redshift clusters of galaxies found efficiently; X-ray absorbed, optically clean AGN, which may be the bright prototypes of Chandra Deep Survey sources; and several with a still unknown nature. Recent XMM-Newton results confirm the existence of this class of X-ray source with much refined positions. During the first year of this project we have made a major discovery. The second 'blanks' X-ray source observed with Chandra was found to be extended. Using Chandra data and ground-based R and K band imaging we estimated this to be a high redshift cluster of galaxies with z approx. 0.85. Spectroscopy agrees with this estimate (z=0.89). This success shows that our method of hunting down 'blank' field X-ray sources is a highly efficient method of finding the otherwise elusive high redshift clusters. With extensive follow-up we should be able to use 'blanks' to make cosmological tests. The paper is now in press in the Astrophysical Journal (abstract below.) The other Chandra source is point-like, showing that there are a variety of 'blank' source types. Other follow-up observations with XMM-Newton, and (newly approved in cycle 2) with Chandra are eagerly awaited. A follow-up paper uses a large amount of supporting data for the remaining blanks. A combination of ROSAT, Chandra and ground based data convincingly identified one of the blanks as a Ultra-luminous X-ray source (ULX) in a spiral galaxy (abstract below). This program resulted in 3 refereed papers in major journals, 4 conference proceedings and a significant fraction of the PhD thesis of Dr. Ilaria Cagnoni. Details of the publications are given.

Seeing Red and Shooting Blanks: A Study of Red Quasars and Blank Field X-Ray Sources

NASA Technical Reports Server (NTRS)

Elvis, Martin; Oliversen, Ronald J. (Technical Monitor)

2002-01-01

We have identified a population of 'blank field sources' (or 'blanks') among the ROSAT (Roentgen Satellite) bright unidentified X-ray sources with faint optical counterparts. The extreme X-ray over optical flux ratio of blank field sources is not compatible with the main classes of X-ray emitters except for extreme BL Lacertae objects at fx/fv is equal to or less than 35. From the analysis of ROSAT archival data we found evidence for only three sources, out of 16, needing absorption in excess of the Galactic value and no indication of variability. We also found evidence for an extended nature for only one of the five blanks with a serendipitous HRI (High Resolution Imager) detection; this source (1WGA J1226.9+3332) was confirmed as a z=0.89 cluster of galaxies. Palomar images reveal the presence of a red (O - E is equal to or greater than 2) counterpart in the X-ray error circle for six blanks. The identification process brought to the discovery of another high z cluster of galaxies, one (possibly extreme) BL Lac and two apparently normal type 1 AGNs (Active Galactic Nuclei). These AGNs, together with four more AGN-like objects seem to form a well defined group: they present type 1 X-ray spectra but red Palomar counterparts. We discuss the possible explanations for the discrepancy between the X-ray and optical data, among which: a suppressed big blue bump emission, an extreme dust to gas (approximately 40 - 60 the Galactic ratio) ratio value and a high redshift (z is greater than or equal to 3.5) QSO (Quasi-Stellar Object) nature. These AGN-like blanks seem to be the bright (and easier to study) analogs of the sources which are being found in deep Chandra observations. Five more blanks have a still an unknown nature.

Optimizing Compliance and Thermal Conductivity of Plasma Sprayed Thermal Barrier Coatings via Controlled Powders and Processing Strategies

NASA Astrophysics Data System (ADS)

Tan, Yang; Srinivasan, Vasudevan; Nakamura, Toshio; Sampath, Sanjay; Bertrand, Pierre; Bertrand, Ghislaine

2012-09-01

The properties and performance of plasma-sprayed thermal barrier coatings (TBCs) are strongly dependent on the microstructural defects, which are affected by starting powder morphology and processing conditions. Of particular interest is the use of hollow powders which not only allow for efficient melting of zirconia ceramics but also produce lower conductivity and more compliant coatings. Typical industrial hollow spray powders have an assortment of densities resulting in masking potential advantages of the hollow morphology. In this study, we have conducted process mapping strategies using a novel uniform shell thickness hollow powder to control the defect microstructure and properties. Correlations among coating properties, microstructure, and processing reveal feasibility to produce highly compliant and low conductivity TBC through a combination of optimized feedstock and processing conditions. The results are presented through the framework of process maps establishing correlations among process, microstructure, and properties and providing opportunities for optimization of TBCs.

When the Ostrich-Algorithm Fails: Blanking Method Affects Spike Train Statistics.

PubMed

Joseph, Kevin; Mottaghi, Soheil; Christ, Olaf; Feuerstein, Thomas J; Hofmann, Ulrich G

2018-01-01

Modern electroceuticals are bound to employ the usage of electrical high frequency (130-180 Hz) stimulation carried out under closed loop control, most prominent in the case of movement disorders. However, particular challenges are faced when electrical recordings of neuronal tissue are carried out during high frequency electrical stimulation, both in-vivo and in-vitro . This stimulation produces undesired artifacts and can render the recorded signal only partially useful. The extent of these artifacts is often reduced by temporarily grounding the recording input during stimulation pulses. In the following study, we quantify the effects of this method, "blanking," on the spike count and spike train statistics. Starting from a theoretical standpoint, we calculate a loss in the absolute number of action potentials, depending on: width of the blanking window, frequency of stimulation, and intrinsic neuronal activity. These calculations were then corroborated by actual high signal to noise ratio (SNR) single cell recordings. We state that, for clinically relevant frequencies of 130 Hz (used for movement disorders) and realistic blanking windows of 2 ms, up to 27% of actual existing spikes are lost. We strongly advice cautioned use of the blanking method when spike rate quantification is attempted. Blanking (artifact removal by temporarily grounding input), depending on recording parameters, can lead to significant spike loss. Very careful use of blanking circuits is advised.

When the Ostrich-Algorithm Fails: Blanking Method Affects Spike Train Statistics

PubMed Central

Joseph, Kevin; Mottaghi, Soheil; Christ, Olaf; Feuerstein, Thomas J.; Hofmann, Ulrich G.

2018-01-01

Modern electroceuticals are bound to employ the usage of electrical high frequency (130–180 Hz) stimulation carried out under closed loop control, most prominent in the case of movement disorders. However, particular challenges are faced when electrical recordings of neuronal tissue are carried out during high frequency electrical stimulation, both in-vivo and in-vitro. This stimulation produces undesired artifacts and can render the recorded signal only partially useful. The extent of these artifacts is often reduced by temporarily grounding the recording input during stimulation pulses. In the following study, we quantify the effects of this method, “blanking,” on the spike count and spike train statistics. Starting from a theoretical standpoint, we calculate a loss in the absolute number of action potentials, depending on: width of the blanking window, frequency of stimulation, and intrinsic neuronal activity. These calculations were then corroborated by actual high signal to noise ratio (SNR) single cell recordings. We state that, for clinically relevant frequencies of 130 Hz (used for movement disorders) and realistic blanking windows of 2 ms, up to 27% of actual existing spikes are lost. We strongly advice cautioned use of the blanking method when spike rate quantification is attempted. Impact statement Blanking (artifact removal by temporarily grounding input), depending on recording parameters, can lead to significant spike loss. Very careful use of blanking circuits is advised. PMID:29780301

Laser: a tool for light weight steel solutions for the automotive industry

NASA Astrophysics Data System (ADS)

Prange, Wilfried; Wonneberger, Ingo

2003-03-01

Mid 80th the steel industry discovered the laser as a tool to develop new products made from steel -- the tailored blanks. That means welding single blanks together, which are of different gauge or grades and coating. In the meantime this product is one of the key solutions for light weight vehicles with increasing performances. The market development world wide confirms this statement. But the development of this product is still going on. New high power lasers and new laser generations as Nd:YAG lasers are the basis. Today welded blanks with almost any seam/blank configuration are in high volume production. These blanks offer an additional potential for the optimization of the final product. To produce flat blank is only one possibility. New developments are the tailored tubes as a prematerial for the hydroforming process. This product becomes more and more important for optimized body in white solutions. But this design elements need new solutions in the assembly shops. So the laser is going to get more importance in the 3D welding process as well. This was shown for example in the ULSAB(-AVC)-project. Future vehicles more and more contain different materials. For example the joining of steel and aluminum to Hybrid Blanks can be done successfully by the use of laser. So the laser is one of the most important tools in the future.

Low-Cost Opportunity for Small-Scale Manufacture of Hardwood Blanks

Treesearch

Bruce G. Hansen; Philip A. Araman

1985-01-01

We analyzed the manufacture of standard-size hardwood blanks from lumber on a relatively small scale by conventional processing. Requiring an investment of just over $200,000, the conventional mill can process 500 M bf (thousand board feet) of kiln-dried lumber annually. The study focused on the economics associated with manufacture of blanks from four species -...

76 FR 14697 - Aleris Blanking and Rim Products, Inc., a Division of Aleris International, Inc., Terre Haute, IN...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-03-17

... Products, Inc., a Division of Aleris International, Inc., Terre Haute, IN; Notice of Revised Determination... workers of Aleris Blanking and Rim Products, Inc., a division of Aleris International, Inc., Terre Haute... Blanking and Rim Products, Inc., a division of Aleris International, Inc., Terre Haute, Indiana, who became...

A novel methodology for litho-to-etch pattern fidelity correction for SADP process

NASA Astrophysics Data System (ADS)

Chen, Shr-Jia; Chang, Yu-Cheng; Lin, Arthur; Chang, Yi-Shiang; Lin, Chia-Chi; Lai, Jun-Cheng

2017-03-01

For 2x nm node semiconductor devices and beyond, more aggressive resolution enhancement techniques (RETs) such as source-mask co-optimization (SMO), litho-etch-litho-etch (LELE) and self-aligned double patterning (SADP) are utilized for the low k1 factor lithography processes. In the SADP process, the pattern fidelity is extremely critical since a slight photoresist (PR) top-loss or profile roughness may impact the later core trim process, due to its sensitivity to environment. During the subsequent sidewall formation and core removal processes, the core trim profile weakness may worsen and induces serious defects that affect the final electrical performance. To predict PR top-loss, a rigorous lithography simulation can provide a reference to modify mask layouts; but it takes a much longer run time and is not capable of full-field mask data preparation. In this paper, we first brought out an algorithm which utilizes multi-intensity levels from conventional aerial image simulation to assess the physical profile through lithography to core trim etching steps. Subsequently, a novel correction method was utilized to improve the post-etch pattern fidelity without the litho. process window suffering. The results not only matched PR top-loss in rigorous lithography simulation, but also agreed with post-etch wafer data. Furthermore, this methodology can also be incorporated with OPC and post-OPC verification to improve core trim profile and final pattern fidelity at an early stage.

Comparison of fabrication methods for microstructured deep UV multimode waveguides based on fused silica

NASA Astrophysics Data System (ADS)

Elmlinger, Philipp; Schreivogel, Martin; Schmid, Marc; Kaiser, Myriam; Priester, Roman; Sonström, Patrick; Kneissl, Michael

2016-04-01

The suitability of materials for deep ultraviolet (DUV) waveguides concerning transmittance, fabrication, and coupling properties is investigated and a fused silica core/ambient air cladding waveguide system is presented. This high refractive index contrast system has far better coupling efficiency especially for divergent light sources like LEDs and also a significantly smaller critical bending radius compared to conventional waveguide systems, as simulated by ray-tracing simulations. For the fabrication of 300-ffm-thick multimode waveguides a hydrouoric (HF) acid based wet etch process is compared to selective laser etching (SLE). In order to fabricate thick waveguides out of 300-ffm-thick silica wafers by HF etching, two masking materials, LPCVD silicon nitride and LPCVD poly silicon, are investigated. Due to thermal stress, the silicon nitride deposited wafers show cracks and even break. Using poly silicon as a masking material, no cracks are observed and deep etching in 50 wt% HF acid up to 180 min is performed. While the masked and unmasked silica surface is almost unchanged in terms of roughness, notching defects occur at the remaining polysilicon edge leading to jagged sidewalls. Using SLE, waveguides with high contour accuracy are fabricated and the DUV guiding properties are successfully demonstrated with propagation losses between 0.6 and 0:8 dB=mm. These values are currently limited by sidewall scattering losses.

Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance via Serpentine Channel Patterned Mask.

PubMed

Ji, Qingbin; Li, Lei; Zhang, Wei; Wang, Jia; Liu, Peichi; Xie, Yahong; Yan, Tongxing; Yang, Wei; Chen, Weihua; Hu, Xiaodong

2016-08-24

The existence of high threading dislocation density (TDD) in GaN-based epilayers is a long unsolved problem, which hinders further applications of defect-sensitive GaN-based devices. Multiple-modulation of epitaxial lateral overgrowth (ELOG) is used to achieve high-quality GaN template on a novel serpentine channel patterned sapphire substrate (SCPSS). The dislocation blocking brought by the serpentine channel patterned mask, coupled with repeated dislocation bending, can reduce the dislocation density to a yet-to-be-optimized level of ∼2 × 10(5) to 2 × 10(6) cm(-2). About 80% area utilization rate of GaN with low TDD and stress relaxation is obtained. The periodical variations of dislocation density, optical properties and residual stress in GaN-based epilayers on SCPSS are analyzed. The quantum efficiency of InGaN/GaN multiple quantum wells (MQWs) on it can be increased by 52% compared with the conventional sapphire substrate. The reduced nonradiative recombination centers, the enhanced carrier localization, and the suppressed quantum confined Stark effect, are the main determinants of improved luminous performance in MQWs on SCPSS. This developed ELOG on serpentine shaped mask needs no interruption and regrowth, which can be a promising candidate for the heteroepitaxy of semipolar/nonpolar GaN and GaAs with high quality.

[Protection and bidirectional effect of rhubarb anthraquinone and tannins for rats' liver].

PubMed

Qin, Lu-shan; Zhao, Hai-ping; Zhao, Yan-ling; Ma, Zhi-jiel; Zeng, Ling-na; Zhang, Ya-ming; Zhang, Ping; Yan, Dan; Bai, Zhao-fang; Li, Yue; Hao, Qing-xiu; Zhao, Kui-jun; Wang, Jia-bo; Xiao, Xiao-he

2014-06-01

To compare the bidirectional effect of rhubarb total anthraquinone (TA) and total tannins (TT) on rats' liver. One hundred rats were randomly divided into 10 groups, i.e., the blank group, the model group, the blank + high dose TA group, the blank +low dose TA group, the blank + high dose TT group, the blank + low dose TT group, the model + high dose TA group, the model + low dose TA group, the model +high dose TT group, and the model + low dose TT group, 10 in each group. The carbon tetrachloride (CCI4) was used to prepare the acute liver injury rat model. TA and TT of rhubarb (at 5.40 g crude drugs/kg and 14.69 g crude drugs/kg) were intragastrically administrated to rats in all groups except the blank group and the model group, once daily for 6 successive days.The general state of rats, biochemical indices such as alanine aminotransferase (ALT), aspartate aminotransferase (AST), alkaline phosphatase (ALP), laminin (LN), hyaluronic acid (HA), transforming growth factor beta1 (TGF-beta1), as well pathological results of rat liver tissues. Finally the protection laws of TA and TT for rats' liver were analyzed using factor analysis. Compared with the blank control group, all biochemical indices increased in the blank group (P < 0.05, P < 0.01). HA also increased in the blank + high dose TA group; AST, ALT, and HA also increased in the blank +high dose TT group (P < 0.05). Compared with the model group, AST, ALT, ALP, HA, and TGF-beta1 significantly decreased in the model + low dose TA group, the model + high dose TA group, the model + low dose TT group (P < 0.05, P < 0.01). Serum AST, ALT, and ALP also decreased in the model + high dose TT group (P < 0.05, P < 0.01). Pathological results showed that mild swollen liver cells in the model + high dose TA group. Fatty degeneration and fragmental necrosis around the central veins occurred in the blank + high dose TA group. The pathological injury was inproved in the model +low dose TA group. Two common factors, liver fibrosis and liver cell injury, were extracted by using factor analysis. TA showed stronger improvement of the two common factors than TT. Rhubarb TA and TT showed protective and harmful effects on rats' liver. At an equivalent dosage, TA had better liver protection than TT. High dose TT played a role in liver injury to some extent.

Stiffness management of sheet metal parts using laser metal deposition

NASA Astrophysics Data System (ADS)

Bambach, Markus; Sviridov, Alexander; Weisheit, Andreas

2017-10-01

Tailored blanks are established solutions for the production of load-adapted sheet metal components. In the course of the individualization of production, such semi-finished products are gaining importance. In addition to tailored welded blanks and tailored rolled blanks, patchwork blanks have been developed which allow a local increase in sheet thickness by welding, gluing or soldering patches onto sheet metal blanks. Patchwork blanks, however, have several limitations, on the one hand, the limited freedom of design in the production of patchwork blanks and, on the other hand, the fact that there is no optimum material bonding with the substrate. The increasing production of derivative and special vehicles on the basis of standard vehicles, prototype production and the functionalization of components require solutions with which semi-finished products and sheet metal components can be provided flexibly with local thickenings or functional elements with a firm metallurgical bond to the substrate. An alternative to tailored and patchwork blanks is, therefore, a free-form reinforcement applied by additive manufacturing via laser metal deposition (LMD). By combining metal forming and additive manufacturing, stiffness can be adapted to the loads based on standard components in a material-efficient manner and without the need to redesign the forming tools. This paper details a study of the potential of stiffness management by LMD using a demonstrator part. Sizing optimization is performed and part distortion is taken into account to find an optimal design for the cladding. A maximum stiffness increase of 167% is feasible with only 4.7% additional mass. Avoiding part distortion leads to a pareto-optimal design which achieves 95% more stiffness with 6% added mass.

Blanking and piercing theory, applications and recent experimental results

NASA Astrophysics Data System (ADS)

Zaid, Adnan l. O.

2014-06-01

Blanking and piercing are manufacturing processes by which certain geometrical shapes are sheared off a sheet metal. If the sheared off part is the one required, the processes referred to as blanking and if the remaining part in the sheet is the one required, the process is referred to as piercing. In this paper, the theory and practice of these processes are reviewed and discussed The main parameters affecting these processes are presented and discussed. These include: the radial clearance percentage, punch and die geometrical parameters, for example punch and die profile radii. The abovementioned parameters on the force and energy required to effect blanking together with their effect on the quality of the products are also presented and discussed. Recent experimental results together with photomacrographs and photomicrographs are also included and discussed. Finally, the effect of punch and die wear on the quality of the blanks is alsogiven and discussed.

Tracing accelerated galaxy formation in a proto-cluster at z=3.8 with GMOS

NASA Astrophysics Data System (ADS)

Handel Hughes, David; Lowenthal, James; Wilson, Grant; Yun, Min S.; Fazio, Giovanni G.; Huang, Jiasheng; Aretxaga, Itziar; Porras, Alicia; Smail, Ian; Ivison, Rob J.; Stevens, Jason; Dunlop, James S.

2007-08-01

The 1.1mm AzTEC camera has recently conducted the largest and most sensitive survey at mm-wavelengths towards a powerful high-redshift radio galaxy: 4C41.17 at z 3.8. The 1.1mm map reveals a significant over-density of luminous, massive dust-enshrouded galaxies, a factor of 10 more numerous than the blank-field mm-galaxy population, which statistically is expected to lie at lower-redshifts, z 2.2. The AzTEC sources are expected to trace the bulk of the elliptical galaxy formation within a massive protocluster at z 3.8, over an unprecedentedly large area of 6 x 6 Mpc^2. We propose to acquire multi-object spectroscopic observations over 3 adjacent GMOS fields to provide redshifts for 5 SMA/AzTEC sources, which have sub-arcsec interferometric precisions, identifying unambiguously their optical/IR counterparts, which are inferred to be forming stars at rates in excess of 500 M_sun/yr ( L(FIR) > 10^13 L_sun ). Although these are dusty objects, we expect most of them to have patchy obscuration, and thus be able to detect emission-lines from the star-forming regions, as has been achieved with the mm-selected blank-field population. Additional slitlets in the 3 GMOS masks will also simultaneously measure the redshift of 30 neighbouring (< 20") optical/Spitzer selected galaxies that could be associated with the haloes of these SMA detected AzTEC sources, and 60 additional optical/Spitzer sources that, through photo-z, are likely to be at z 3.8 and be associated with other mm-galaxies that lie within the AzTEC map. These GMOS data will identify whether small groups of dynamically-interacting galaxies in the local environment (dark matter haloes) of the gas-rich, luminous starburst AzTEC sources are stimulating the accelerated levels of galaxy formation observed towards this biased region (protocluster) in the early Universe.

Terahertz Imaging and Backscatter Radiography Probability of Detection Study for Space Shuttle Foam Inspections

NASA Technical Reports Server (NTRS)

Ussery, Warren; Johnson, Kenneth; Walker, James; Rummel, Ward

2008-01-01

This slide presentation reviews the use of terahertz imaging and Backscatter Radiography in a probability of detection study of the foam on the external tank (ET) shedding and damaging the shuttle orbiter. Non-destructive Examination (NDE) is performed as one method of preventing critical foam debris during the launch. Conventional NDE methods for inspection of the foam are assessed and the deficiencies are reviewed. Two methods for NDE inspection are reviewed: Backscatter Radiography (BSX) and Terahertz (THZ) Imaging. The purpose of the Probability of Detection (POD) study was to assess performance and reliability of the use of BSX and or THZ as an appropriate NDE method. The study used a test article with inserted defects, and a sample of blanks included to test for false positives. The results of the POD study are reported.

Field results from a new die-to-database reticle inspection platform

NASA Astrophysics Data System (ADS)

Broadbent, William; Yokoyama, Ichiro; Yu, Paul; Seki, Kazunori; Nomura, Ryohei; Schmalfuss, Heiko; Heumann, Jan; Sier, Jean-Paul

2007-05-01

A new die-to-database high-resolution reticle defect inspection platform, TeraScanHR, has been developed for advanced production use with the 45nm logic node, and extendable for development use with the 32nm node (also the comparable memory nodes). These nodes will use predominantly ArF immersion lithography although EUV may also be used. According to recent surveys, the predominant reticle types for the 45nm node are 6% simple tri-tone and COG. Other advanced reticle types may also be used for these nodes including: dark field alternating, Mask Enhancer, complex tri-tone, high transmission, CPL, etc. Finally, aggressive model based OPC will typically be used which will include many small structures such as jogs, serifs, and SRAF (sub-resolution assist features) with accompanying very small gaps between adjacent structures. The current generation of inspection systems is inadequate to meet these requirements. The architecture and performance of the new TeraScanHR reticle inspection platform is described. This new platform is designed to inspect the aforementioned reticle types in die-to-database and die-to-die modes using both transmitted and reflected illumination. Recent results from field testing at two of the three beta sites are shown (Toppan Printing in Japan and the Advanced Mask Technology Center in Germany). The results include applicable programmed defect test reticles and advanced 45nm product reticles (also comparable memory reticles). The results show high sensitivity and low false detections being achieved. The platform can also be configured for the current 65nm, 90nm, and 130nm nodes.

Production of the 4.1-m Zerodur mirror blank for the VISTA Telescope

NASA Astrophysics Data System (ADS)

Doehring, Thorsten; Jedamzik, Ralf; Wittmer, Volker; Thomas, Armin

2004-09-01

VISTA (Visible and Infrared Survey Telescope for Astronomy) is designed to be the world's largest wide field telescope. After finishing of the construction the telescope will be part of ESO and located in Chile close to the VLT observatory at Cerro Paranal. In November 2001 SCHOTT was selected by the VISTA project office at the Royal Observatory of Edinburgh to deliver the 4.1 m diameter primary mirror blank. The manufacturing of the mirror blank made from the zero expansion material Zerodur was challenging especially due to the f/1 design. Several tons of the glass ceramic material were removed during the grinding operation. A meniscus blank with a diameter of 4100 mm and a thickness of 171.5 mm was generated, having a large central hole of 1200 mm and an aspherical shape of the concave surface. Also the handling and turning operations needed special effort and were performed by a skilled team. This paper presents details and pictures of the corresponding production and inspection sequence at SCHOTT. The geometrical parameters were measured during manufacturing by help of a laser tracker system and the achieved parameters were compared with the initial technical specification. The final quality inspection verified the excellent quality of the mirror blank. The close co-operation between the astronomers and industry resulted in a project management without problems. In April 2003 the VISTA blank was delivered successfully within a ceremony dedicated to the anniversary of "100 years of astronomical mirror blanks from SCHOTT."

High-speed blanking of copper alloy sheets: Material modeling and simulation

NASA Astrophysics Data System (ADS)

Husson, Ch.; Ahzi, S.; Daridon, L.

2006-08-01

To optimize the blanking process of thin copper sheets ( ≈ 1. mm thickness), it is necessary to study the influence of the process parameters such as the punch-die clearance and the wear of the punch and the die. For high stroke rates, the strain rate developed in the work-piece can be very high. Therefore, the material modeling must include the dynamic effects.For the modeling part, we propose an elastic-viscoplastic material model combined with a non-linear isotropic damage evolution law based on the theory of the continuum damage mechanics. Our proposed modeling is valid for a wide range of strain rates and temperatures. Finite Element simulations, using the commercial code ABAQUS/Explicit, of the blanking process are then conducted and the results are compared to the experimental investigations. The predicted cut edge of the blanked part and the punch-force displacement curves are discussed as function of the process parameters. The evolution of the shape errors (roll-over depth, fracture depth, shearing depth, and burr formation) as function of the punch-die clearance, the punch and the die wear, and the contact punch/die/blank-holder are presented. A discussion on the different stages of the blanking process as function of the processing parameters is given. The predicted results of the blanking dependence on strain-rate and temperature using our modeling are presented (for the plasticity and damage). The comparison our model results with the experimental ones shows a good agreement.

The Muslim Brotherhood and Modern Education: How Will the Muslim Brotherhood Address Egypt’s Failing Education System?

DTIC Science & Technology

2012-09-01

Thesis Advisor: Robert Springborg Second Reader: Mohammed M. Hafez THIS PAGE INTENTIONALLY LEFT BLANK i REPORT DOCUMENTATION PAGE Form...of secular subjects. vi THIS PAGE INTENTIONALLY LEFT BLANK vii TABLE OF CONTENTS I . INTRODUCTION...understanding, this thesis would not have been possible. xii THIS PAGE INTENTIONALLY LEFT BLANK 1 I . INTRODUCTION A. MAJOR RESEARCH QUESTION The

Exploring Valued-Added Options - Edge-Glued Panels and Blanks Offer Value-Added Opportunities

Treesearch

Bob Smith; Philip A. Araman

1997-01-01

As sawmills search for new opportunities to add value to rough sawn lumber, many consider producing dimension parts as one solution. Assembling dimension parts into edge-glued panels or standard blanks can add even further value. Blanks are defined as pieces of solid wood (which may be edge-glued) that are manufactured to a predetermined size. This article discusses...

A gunner model for an AAA tracking task with interrupted observations

NASA Technical Reports Server (NTRS)

Yu, C. F.; Wei, K. C.; Vikmanis, M.

1982-01-01

The problem of modeling a trained human operator's tracking performance in an anti-aircraft system under various display blanking conditions is discussed. The input to the gunner is the observable tracking error subjected to repeated interruptions (blanking). A simple and effective gunner model was developed. The effect of blanking on the gunner's tracking performance is approached via modeling the observer and controller gains.

Penetrating ocular trauma associated with blank cartridge

PubMed Central

2014-01-01

Background Blank cartridge guns are generally regarded as being harmless and relative safe. However recent published articles demonstrated that the gas pressure from the exploding propellant of blank cartridge is powerful enough to penetrate the thoracic wall, abdominal muscle, small intestine and the skull. And there has been a limited number of case reports of ocular trauma associated with blank cartridge injury. In addition, no report on case with split extraocular muscle injury with traumatic cataract and penetrating corneoscleral wound associated with blank cartridge has been previously documented. This report describes the case of patient who sustained penetrating ocular injury with extraocular muscle injury by a close-distance blank cartridge that required surgical intervention. Case presentation A 20-year-old man sustained a penetrating globe injury in the right eye while cleaning a blank cartridge pistol. His uncorrected visual acuity at presentation was hand motion and he had a flame burn of his right upper and lower lid with multiple missile wounds. On slit-lamp examination, there was a 12-mm laceration of conjunctiva along the 9 o'clock position with two pinhole-like penetrating injuries of cornea and sclera. There was also a 3-mm corneal laceration between 9 o'clock and 12 o'clock and the exposed lateral rectus muscle was split. Severe Descemet's membrane folding with stromal edema was observed, and numerous yellow, powder-like foreign bodies were impacted in the cornea. Layered anterior chamber bleeding with traumatic cataract was also noted. Transverse view of ultrasonography showed hyperechoic foreign bodies with mild reduplication echoes and shadowing. However, a computed tomographic scan using thin section did not reveal a radiopaque foreign body within the right globe. Conclusion To our best knowledge, this is the first case report of split extraocular muscle injury with traumatic cataract and penetrating ocular injury caused by blank cartridge injury. Intraocular foreign bodies undetectable by CT were identified by B-scan ultrasonography in our patient. This case highlights the importance of additional ultrasonography when evaluating severe ocular trauma. And ophthalmologists should consider the possibility of penetrating injury caused by blank ammunition. PMID:24589340

Novel EUV mask black border suppressing EUV and DUV OoB light reflection

NASA Astrophysics Data System (ADS)

Ito, Shin; Kodera, Yutaka; Fukugami, Norihito; Komizo, Toru; Maruyama, Shingo; Watanabe, Genta; Yoshida, Itaru; Kotani, Jun; Konishi, Toshio; Haraguchi, Takashi

2016-05-01

EUV lithography is the most promising technology for semiconductor device manufacturing of the 10nm node and beyond. The image border is a pattern free dark area around the die on the photomask serving as transition area between the parts of the mask that is shielded from the exposure light by the Reticle Masking (REMA) blades and the die. When printing a die at dense spacing on an EUV scanner, the reflection from the image border overlaps edges of neighboring dies, affecting CD and contrast in this area. This is related to the fact that EUV absorber stack reflects 1-3% of actinic EUV light. To reduce this effect several types of image border with reduced EUV reflectance (<0.05%) have been proposed; such an image border is referred to as a black border. In particular, an etched multilayer type black border was developed; it was demonstrated that CD impact at the edge of a die is strongly reduced with this type of the black border (BB). However, wafer printing result still showed some CD change in the die influenced by the black border reflection. It was proven that the CD shift was caused by DUV Out of Band (OOB) light from the EUV light source. New types of a multilayer etched BB were evaluated and showed a good potential for DUV light suppression. In this study, a novel BB called `Hybrid Black Border' (HBB) has been developed to eliminate EUV and DUV OOB light reflection by applying optical design technique and special micro-fabrication technique. A new test mask with HBB is fabricated without any degradation of mask quality according to the result of CD performance in the main pattern, defectivity and cleaning durability. The imaging performance for N10 imaging structures is demonstrated on NXE:3300B in collaboration with ASML. This result is compared to the imaging results obtained for a mask with the earlier developed BB, and HBB has achieved ~3x improvement; less than 0.2 nm CD changes are observed in the corners of the die. A CD uniformity budget including impact of OOB light in the die edge area is evaluated which shows that the OOB impact from HBB becomes comparable with other CDU contributors in this area. Finally, we state that HBB is a promising technology allowing for CD control at die edges.

Improved confidence intervals when the sample is counted an integer times longer than the blank.

PubMed

Potter, William Edward; Strzelczyk, Jadwiga Jodi

2011-05-01

Past computer solutions for confidence intervals in paired counting are extended to the case where the ratio of the sample count time to the blank count time is taken to be an integer, IRR. Previously, confidence intervals have been named Neyman-Pearson confidence intervals; more correctly they should have been named Neyman confidence intervals or simply confidence intervals. The technique utilized mimics a technique used by Pearson and Hartley to tabulate confidence intervals for the expected value of the discrete Poisson and Binomial distributions. The blank count and the contribution of the sample to the gross count are assumed to be Poisson distributed. The expected value of the blank count, in the sample count time, is assumed known. The net count, OC, is taken to be the gross count minus the product of IRR with the blank count. The probability density function (PDF) for the net count can be determined in a straightforward manner.

Estimating surface hardening profile of blank for obtaining high drawing ratio in deep drawing process using FE analysis

NASA Astrophysics Data System (ADS)

Tan, C. J.; Aslian, A.; Honarvar, B.; Puborlaksono, J.; Yau, Y. H.; Chong, W. T.

2015-12-01

We constructed an FE axisymmetric model to simulate the effect of partially hardened blanks on increasing the limiting drawing ratio (LDR) of cylindrical cups. We partitioned an arc-shaped hard layer into the cross section of a DP590 blank. We assumed the mechanical property of the layer is equivalent to either DP980 or DP780. We verified the accuracy of the model by comparing the calculated LDR for DP590 with the one reported in the literature. The LDR for the partially hardened blank increased from 2.11 to 2.50 with a 1 mm depth of DP980 ring-shaped hard layer on the top surface of the blank. The position of the layer changed with drawing ratios. We proposed equations for estimating the inner and outer diameters of the layer, and tested its accuracy in the simulation. Although the outer diameters fitted in well with the estimated line, the inner diameters are slightly less than the estimated ones.

Lightweight ZERODUR mirror blanks: recent advances supporting faster, cheaper, and better spaceborne optical telescope assemblies

NASA Astrophysics Data System (ADS)

Hull, Tony; Westerhoff, Thomas

2014-10-01

While there is no single material solution ideal for all missions, recent advances by SCHOTT in fabricating lightweight mirror blanks makes ZERODUR® a highly viable solution for many spaceborne telescopes. ZERODUR® is a well-characterized very low-expansion material. Monolithic mirrors are made without bonding or fusing out of highly homogeneous and isotropic blanks currently available in sizes up to 4m plus. We will summarize results recently given in a series of papers on the characteristics of these lightweight mirror blanks in sizes from 0.3m up, and describe the method of blank fabrication, with its compatibility to contemporary optical fabrication techniques that control of all optical spatial frequencies. ZERODUR® has a 35 year heritage in space on numerous missions, including the secondary mirror of Hubble, and all the Chandra mirrors. With the lightweighting we will discuss, ZERODUR® is now a high performing, affordable and rapidly produced mirror substrate suitable for lightweight imaging telescopes.

Toward optimized light utilization in nanowire arrays using scalable nanosphere lithography and selected area growth.

PubMed

Madaria, Anuj R; Yao, Maoqing; Chi, Chunyung; Huang, Ningfeng; Lin, Chenxi; Li, Ruijuan; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

2012-06-13

Vertically aligned, catalyst-free semiconducting nanowires hold great potential for photovoltaic applications, in which achieving scalable synthesis and optimized optical absorption simultaneously is critical. Here, we report combining nanosphere lithography (NSL) and selected area metal-organic chemical vapor deposition (SA-MOCVD) for the first time for scalable synthesis of vertically aligned gallium arsenide nanowire arrays, and surprisingly, we show that such nanowire arrays with patterning defects due to NSL can be as good as highly ordered nanowire arrays in terms of optical absorption and reflection. Wafer-scale patterning for nanowire synthesis was done using a polystyrene nanosphere template as a mask. Nanowires grown from substrates patterned by NSL show similar structural features to those patterned using electron beam lithography (EBL). Reflection of photons from the NSL-patterned nanowire array was used as a measure of the effect of defects present in the structure. Experimentally, we show that GaAs nanowires as short as 130 nm show reflection of <10% over the visible range of the solar spectrum. Our results indicate that a highly ordered nanowire structure is not necessary: despite the "defects" present in NSL-patterned nanowire arrays, their optical performance is similar to "defect-free" structures patterned by more costly, time-consuming EBL methods. Our scalable approach for synthesis of vertical semiconducting nanowires can have application in high-throughput and low-cost optoelectronic devices, including solar cells.

Seal for fluid forming tools

DOEpatents

Golovashchenko, Sergey Fedorovich [Beverly Hills, MI; Bonnen, John Joseph Francis [Milford, MI

2012-03-20

An electro-hydraulic forming tool for forming a sheet metal blank in a one-sided die has first and second rigid rings that engage opposite sides of a sheet metal blank. The rigid rings are contained within slots on a die portion and a hydraulic force applicator portion of the forming tool. The seals are either resiliently biased by an elastomeric member or inherently resiliently biased into contact with the blank.

12 CFR Appendix A to Part 1024 - Instructions for Completing HUD-1 and HUD-1a Settlement Statements; Sample HUD-1 and HUD-1a...

Code of Federal Regulations, 2013 CFR

2013-01-01

... lines are provided in section L for any additional settlement charges. Blank lines are also provided for additional insertions in sections J and K. The names of the recipients of the settlement charges in section L... blank lines. Lines and columns in section J which relate to the Borrower's transaction may be left blank...

12 CFR Appendix A to Part 1024 - Instructions for Completing HUD-1 and HUD-1A Settlement Statements; Sample HUD-1 and HUD-1A...

Code of Federal Regulations, 2012 CFR

2012-01-01

... lines are provided in section L for any additional settlement charges. Blank lines are also provided for additional insertions in sections J and K. The names of the recipients of the settlement charges in section L... blank lines. Lines and columns in section J which relate to the Borrower's transaction may be left blank...

Blanks: a computer program for analyzing furniture rough-part needs in standard-size blanks

Treesearch

Philip A. Araman

1983-01-01

A computer program is described that allows a company to determine the number of edge-glued, standard-size blanks required to satisfy its rough-part needs for a given production period. Yield and cost information also is determined by the program. A list of the program inputs, outputs, and uses of outputs is described, and an example analysis with sample output is...

Blank and sample handling troubleshooting in ultratrace analysis of alkylphenols and bisphenol A by liquid chromatography tandem mass spectrometry.

PubMed

Salgueiro-González, N; Concha-Graña, E; Turnes-Carou, I; Muniategui-Lorenzo, S; López-Mahía, P; Prada-Rodríguez, D

2012-11-15

Blank contamination is a notorious problem in the ultratrace analysis of alkylphenols and bisphenol A. The achievement of low detection limits is complicated due to the high background signals. Furthermore, overestimations and underestimations in the analytical results can occur when blank levels are not stable. Thus, a review of sources of blank contamination in this type of analysis was carried out. Several sources of contamination were identified and useful guidelines are proposed for the determination of these compounds in water samples by liquid chromatography coupled with mass spectrometry. The system contamination was maintained below 0.09 ng (reagent blank) for all compounds and below 0.003 μg L(-1) (procedure blank). The main improvement was obtained by using LC-MS grade solvent in the mobile phase and PTFE syringe filters for the filtration of the sample extracts. Sample handling aspects such as filtration and storage of the water samples were also considered. The filtration of the samples should be avoided because both contamination and adsorption problems were observed when different kinds of filters were assayed. The refrigerated storage of water samples should be limited to 5 days (without addition of methanol) or 8 days (with 5% methanol). Copyright © 2012 Elsevier B.V. All rights reserved.

A New Selective Area Lateral Epitaxy Approach for Depositing a-Plane GaN over r-Plane Sapphire

NASA Astrophysics Data System (ADS)

Chen, Changqing; Zhang, Jianping; Yang, Jinwei; Adivarahan, Vinod; Rai, Shiva; Wu, Shuai; Wang, Hongmei; Sun, Wenhong; Su, Ming; Gong, Zheng; Kuokstis, Edmundas; Gaevski, Mikhail; Khan, Muhammad Asif

2003-07-01

We report a new epitaxy procedure for growing extremely low defect density a-plane GaN films over r-plane sapphire. By combining selective area growth through a SiO2 mask opening to produce high height to width aspect ratio a-plane GaN pillars and lateral epitaxy from their c-plane facets, we obtained fully coalesced a-plane GaN films. The excellent structural, optical and electrical characteristics of these selective area lateral epitaxy (SALE) deposited films make them ideal for high efficiency III-N electronic and optoelectronic devices.

III-V compound semiconductor material characterization of microstructures and nanostructures on various optoelectronic devices with analytical transmission electron microscopy and high resolution electron microscopy

NASA Astrophysics Data System (ADS)

Zhou, Wei

Analytical Transmission Electron Microscopy (TEM) and High Resolution Electron Microscopy have been carried out to characterize microstructures and nanostructures in various III-V compound semiconductor devices by metalorganic chemical vapor deposition (MOCVD). The low-defect GaN nonplanar templates by lateral epitaxial overgrowth (LEO) has a trapezoidal cross-section with smooth (0001) and {112¯2} facets. Penetration of threading dislocations (TDs) beyond mask windows is observed in ordinary LEO substrates. In two-step LEO substrates, where TDs are engineered to bend 90° in the TD bending layer after the first LEO step, only perfect a-type dislocations with Burgers vector b = 1/3 <112¯0> are generated in the upper Post-bending layer with a density of ˜8 x 107cm-2. The demonstrated 3-dimensional dislocation spatial distribution in the LEO nonplanar substrate substantiates the dislocation reaction mechanism. Al0.07GaN/GaN superlattice can further decrease dislocations. InGaN QW thickness enhancement on top of GaN nonplanar templates has been verified to influence the optoelectronic properties significantly. Dense arrays of hexagonally ordered MOCVD-grown (In)(Ga)As nano-QDs by block copolymer nanolithography & selective area growth (SAG), approximately 20nm in diameter and 40nm apart with a density of 1011/cm 2, are perfect crystals by TEM. V-shaped defects and worse InAs growth uniformity have been observed in multiple layers of vertically coupled self-assembled InAs nanostructure arrays on strain-modulated GaAs substrates. TEM shows a smooth coalesced GaN surface with a thickness as thin as ˜200nm after Nano-LEO and a defect reduction of 70%-75%. The (In)GaAs 20 nm twist bonded compliant substrates have almost no compliant effect and higher dislocation density, but the 10nm compliant substrates are on the contrary. A 60nm oxygen-infiltrated crystallized transition layer is observed between the amorphous oxidized layer and the crystallized unoxidized aperture in Al xGa1-xAs wet lateral oxidation, potentially influencing the current confinement characteristic of the sub-micron oxide aperture. Almost no dislocation is aroused by the wet lateral oxidation of In0.52Al 0.48As in the InP microresonator waveguides. XTEM was performed to compare InP SAG regions with 10˜50mum masks, which shows the performance deterioration of laser threshold current densities in the case of 50mum mask results from high density of dislocations induced from the highly strained QW structures caused by the high enhancements.

Large optical glass blanks for the ELT generation

NASA Astrophysics Data System (ADS)

Jedamzik, Ralf; Petzold, Uwe; Dietrich, Volker; Wittmer, Volker; Rexius, Olga

2016-07-01

The upcoming extremely large telescope projects like the E-ELT, TMT or GMT telescopes require not only large amount of mirror blank substrates but have also sophisticated instrument setups. Common instrument components are atmospheric dispersion correctors that compensate for the varying atmospheric path length depending on the telescope inclination angle. These elements consist usually of optical glass blanks that have to be large due to the increased size of the focal beam of the extremely large telescopes. SCHOTT has a long experience in producing and delivering large optical glass blanks for astronomical applications up to 1 m and in homogeneity grades up to H3 quality in the past. The most common optical glass available in large formats is SCHOTT N-BK7. But other glass types like F2 or LLF1 can also be produced in formats up to 1 m. The extremely large telescope projects partly demand atmospheric dispersion components even in sizes beyond 1m up to a range of 1.5 m diameter. The production of such large homogeneous optical glass banks requires tight control of all process steps. To cover this demand in the future SCHOTT initiated a research project to improve the large optical blank production process steps from melting to annealing and measurement. Large optical glass blanks are measured in several sub-apertures that cover the total clear aperture of the application. With SCHOTT's new stitching software it is now possible to combine individual sub-aperture measurements to a total homogeneity map of the blank. In this presentation first results will be demonstrated.

Edge Length and Surface Area of a Blank: Experimental Assessment of Measures, Size Predictions and Utility

PubMed Central

Dogandžić, Tamara; Braun, David R.; McPherron, Shannon P.

2015-01-01

Blank size and form represent one of the main sources of variation in lithic assemblages. They reflect economic properties of blanks and factors such as efficiency and use life. These properties require reliable measures of size, namely edge length and surface area. These measures, however, are not easily captured with calipers. Most attempts to quantify these features employ estimates; however, the efficacy of these estimations for measuring critical features such as blank surface area and edge length has never been properly evaluated. In addition, these parameters are even more difficult to acquire for retouched implements as their original size and hence indication of their previous utility have been lost. It has been suggested, in controlled experimental conditions, that two platform variables, platform thickness and exterior platform angle, are crucial in determining blank size and shape meaning that knappers can control the interaction between size and efficiency by selecting specific core angles and controlling where fracture is initiated. The robustness of these models has rarely been tested and confirmed in context other than controlled experiments. In this paper, we evaluate which currently employed caliper measurement methods result in the highest accuracy of size estimations of blanks, and we evaluate how platform variables can be used to indirectly infer aspects of size on retouched artifacts. Furthermore, we investigate measures of different platform management strategies that control the shape and size of artifacts. To investigate these questions, we created an experimental lithic assemblage, we digitized images to calculate 2D surface area and edge length, which are used as a point of comparison for the caliper measurements and additional analyses. The analysis of aspects of size determinations and the utility of blanks contributes to our understanding of the technological strategies of prehistoric knappers and what economic decisions they made during process of blank production. PMID:26332773

The effect of elevated die temperature on deformation of deep drawn round metal cup

NASA Astrophysics Data System (ADS)

Basril, M. A. M.; Hafsyam, Y. M.; Azuddin, M.; Choudhury, I. A.

2017-06-01

One of the major considerations in the current deep drawing practice is the product quality. In this research, the effect of heating temperature on the drawability of the round metal cup has been investigated. Firstly, round metal cups of aluminium and mild steel were drawn from the blank diameters of 60 mm, 65 mm and 70 mm. The experiment conducted at room temperature first, then at 50°C and 100°C. The elongation of the major and minor strains along the cup profile after the process is measured and analysed. On the other hand, the defects from the experiment output and ABAQUS/CAE simulation are compared. The result from experiment shows that the highest major elongation is 11.64 mm and it is happened to a deep drawn aluminium round cup with LDR of 1.69 at temperature of 100°C. On the other hand, for deep drawn mild steel round cup, shows highest major elongation of 12.44 mm for a cup with LDR of 1.56 at 100°C. Both of these statements indicates that the higher temperature could improve the formability of the deep drawn parts besides reducing the probability of the defect to be happened.

Biological Evaluation of Implant Drill Made from Zirconium Dioxide.

PubMed

Akiba, Yosuke; Eguchi, Kaori; Akiba, Nami; Uoshima, Katsumi

2017-04-01

Zirconia is a good candidate material in the dental field. In this study, we evaluated biological responses against a zirconia drill using a bone cavity healing model. Zirconia drills, stainless steel drills, and the drilled bone surface were observed by scanning electron microscopy (SEM), before and after cavity preparation. For the bone cavity healing model, the upper first and second molars of Wistar rats were extracted. After 4 weeks, cavities were prepared with zirconia drills on the left side. As a control, a stainless steel drill was used on the right side. At 3, 7, and 14 days after surgery, micro-CT images were taken. Samples were prepared for histological staining. SEM images revealed that zirconia drills maintained sharpness even after 30 drilling procedures. The bone surface was smoother with the zirconia drill. Micro-CT images showed faster and earlier bone healing in the zirconia drill cavity. On H-E staining, at 7 days, the zirconia drill defect had a smaller blank lacunae area. At 14 days, the zirconia drill defect was filled with newly formed bone. The zirconia drill induces less damage during cavity preparation and is advantageous for bone healing. (197 words). © 2016 The Authors Clinical Implant Dentistry and Related Research Published by Wiley Periodicals, Inc.

The role of surface diffusion and wing tilt in the formation of localized stacking faults in high In-content InGaN MQW nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakajima, Yoshitake; Dapkus, P. Daniel

Yellow and green emitting multiple quantum well structures are grown on nanostripe templates with {10-11} facets. SEM and cathodoluminescence measurements show a correlation between rough surface morphology near the bottom of the stripes and non-radiative recombination centers. Transmission electron microscopy (TEM) analysis shows that these surface instabilities are a result of stacking faults generated from the quantum well (QW) regions near the bottom of the pyramid that propagate to the surface. HRTEM images show that the stacking faults are I{sub 1} type which is formed by removal of one half basal plane to relieve the compressive strain in the InGaNmore » QW. Thicker QWs near the bottom as a result of growth rate enhancement due to the surface diffusion of the precursors from the mask regions cause increased strain. Additionally, the compressive strain induced by the bending of the nanostructure towards the growth mask further increases the strain experienced by the QW thereby causing the localized defect generation.« less

Silicon patterning using ion blistering and e-beam lithography

NASA Astrophysics Data System (ADS)

Giguere, A.; Terreault, B.; Beerens, J.; Aimez, V.; Beauvais, J.

2004-03-01

We explore the limits of silicon patterning using ion blistering in conjunction with e-beam lithography. In a first approach, we implanted 3.5E16 H/cm**2 at 5 keV through variable width (0.1-10 micron) e-beam written PMMA masks. The resist was then removed and the samples were rapid-thermal-annealed (RTA) up to 650 °C. In the wider trenches, round blisters with 800-900 nm diameter and 15 nm height and a few exfoliations are observed, which are similar to those observed on an unmasked surface. In submicron trenches (500-1000 nm), there is a transition in morphology created by the proximity to the border; the blisters are smaller and they are densely aligned along the trench direction ("pearl-string" pattern). No effect is observed in the lowest dimension trenches. The results are discussed in terms of stress/strain fields, defect configuration, and mask shadowing and charging effects. Ultimate pattern resolution will be limited by lateral straggling of the ions in and by the mechanics of lateral crack propagation.

Surface Structure Characterization of Aspergillus fumigatus Conidia Mutated in the Melanin Synthesis Pathway and Their Human Cellular Immune Response

PubMed Central

Bayry, Jagadeesh; Beaussart, Audrey; Dufrêne, Yves F.; Sharma, Meenu; Bansal, Kushagra; Kniemeyer, Olaf; Aimanianda, Vishukumar; Brakhage, Axel A.; Kaveri, Srini V.; Kwon-Chung, Kyung J.

2014-01-01

In Aspergillus fumigatus, the conidial surface contains dihydroxynaphthalene (DHN)-melanin. Six-clustered gene products have been identified that mediate sequential catalysis of DHN-melanin biosynthesis. Melanin thus produced is known to be a virulence factor, protecting the fungus from the host defense mechanisms. In the present study, individual deletion of the genes involved in the initial three steps of melanin biosynthesis resulted in an altered conidial surface with masked surface rodlet layer, leaky cell wall allowing the deposition of proteins on the cell surface and exposing the otherwise-masked cell wall polysaccharides at the surface. Melanin as such was immunologically inert; however, deletion mutant conidia with modified surfaces could activate human dendritic cells and the subsequent cytokine production in contrast to the wild-type conidia. Cell surface defects were rectified in the conidia mutated in downstream melanin biosynthetic pathway, and maximum immune inertness was observed upon synthesis of vermelone onward. These observations suggest that although melanin as such is an immunologically inert material, it confers virulence by facilitating proper formation of the A. fumigatus conidial surface. PMID:24818666

The role of surface diffusion and wing tilt in the formation of localized stacking faults in high In-content InGaN MQW nanostructures

NASA Astrophysics Data System (ADS)

Nakajima, Yoshitake; Dapkus, P. Daniel

2016-08-01

Yellow and green emitting multiple quantum well structures are grown on nanostripe templates with {10-11} facets. SEM and cathodoluminescence measurements show a correlation between rough surface morphology near the bottom of the stripes and non-radiative recombination centers. Transmission electron microscopy (TEM) analysis shows that these surface instabilities are a result of stacking faults generated from the quantum well (QW) regions near the bottom of the pyramid that propagate to the surface. HRTEM images show that the stacking faults are I1 type which is formed by removal of one half basal plane to relieve the compressive strain in the InGaN QW. Thicker QWs near the bottom as a result of growth rate enhancement due to the surface diffusion of the precursors from the mask regions cause increased strain. Additionally, the compressive strain induced by the bending of the nanostructure towards the growth mask further increases the strain experienced by the QW thereby causing the localized defect generation.

Desferrioxamine: a practical method for improving neovascularization of prefabricated flaps.

PubMed

Li, Bin; Li, Hua; Jin, Rui; Cheng, Chen; Wang, Jing; Zhu, Hainan; Zan, Tao; Li, Qingfeng; Hao, Lijun

2015-02-01

Prefabricated flaps are an ideal alternative to repair massive and complex tissue defects. Nevertheless, the risk of necrosis due to unpredictable blood supplies is a major obstacle to the application of prefabricated flaps. The survival of a prefabricated flap depends on the neovascularization between the vascular carrier and the donor tissue. Here, we proposed that the iron chelator, desferrioxamine (DFX), owned therapeutic effects that promoted the neovascularization of prefabricated flaps. An abdominal prefabricated flap model was created in rats via a 2-stage operation. The rats were allocated into 4 groups as follows: 2 groups of rats received DFX treatments during the first or the second stage of the operation, respectively; 1 group of rats received a delay procedure 1 week before the second operation; and the final group was used as a blank control. Flap survival rates and capillary densities were evaluated between groups. The influence of DFX on the dermal fibroblasts was also studied in vitro. Desferrioxamine treatment during the first stage of the operation greatly increased flap survival rate compared to the blank control. The results were similar to those produced by the delay treatment. The vessel count results were consistent with the flap survival rate findings. In vitro, DFX treatment up-regulated the expression levels of several angiogenic factors in the dermal fibroblasts. Nevertheless, DFX treatment during the second stage of the operation was therapeutically detrimental. The application of DFX around the time of vascular carrier implantation greatly promoted neovascularization of prefabricated flaps, but was therapeutically detrimental after the flaps had been elevated.

Negative-tone imaging with EUV exposure toward 13nm hp

NASA Astrophysics Data System (ADS)

Tsubaki, Hideaki; Nihashi, Wataru; Tsuchihashi, Toru; Yamamoto, Kei; Goto, Takahiro

2016-03-01

Negative-tone imaging (NTI) with EUV exposure has major advantages with respect to line-width roughness (LWR) and resolution due in part to polymer swelling and favorable dissolution mechanics. In NTI process, both resist and organic solvents play important roles in determining lithography performances. The present study describes novel chemically amplified resist materials based on NTI technology with EUV using a specific organic solvents. Lithographic performances of NTI process were described in this paper under exposures using ASML NXE:3300 EUV scanner at imec. It is emphasized that 14 nm hp was nicely resolved under exposure dose of 37 mJ/cm2 without any bridge and collapse, which are attributed to the low swelling character of NTI process. Although 13 nm hp resolution was potentially obtained, a pattern collapse still restricts its resolution in case coating resist film thickness is 40 nm. Dark mask limitation due mainly to mask defectivity issue makes NTI with EUV favorable approach for printing block mask to produce logic circuit. A good resolution of CD-X 21 nm/CD-Y 32 nm was obtained for block mask pattern using NTI with usable process window and dose of 49 mJ/cm2. Minimum resolution now reaches CD-X 17 nm / CD-Y 23 nm for the block. A 21 nm block mask resolution was not affected by exposure dose and explored toward low dose down to 18 mJ/cm2 by reducing quencher loading. In addition, there was a negligible amount of increase in LCDU for isolated dot pattern when decreasing exposure dose from 66 mJ/cm2 to 24 mJ/cm2. On the other hand, there appeared tradeoff relationship between LCDU and dose for dense dot pattern, indicating photon-shot noise restriction, but strong dependency on patterning features. Design to improve acid generation efficiency was described based on acid generation mechanism in traditional chemically amplified materials which contains photo-acid generator (PAG) and polymer. Conventional EUV absorber comprises of organic compounds is expected to have 1.6 times higher EUV absorption than polyhydroxystyrene based on calculation. However, observed value of acid amount was comparable or significantly worse than polyhydroxystyrene.

Study of a novel three-dimensional scaffold to repair bone defect in rabbit.

PubMed

Chen, Yushu; Bai, Bo; Zhang, Shujiang; Ye, Jing; Zhai, Haohan; Chen, Yi; Zhang, Linlin; Zeng, Yanjun

2014-05-01

Both decalcified bone matrix (DBM) and fibrin gel possess good biocompatibility, so they are used as scaffolds to culture bone marrow mesenchymal stem cells (BMSCs). The feasibility and efficacy of using compound material being made of decalcified bone matrix and fibrin gel as a three-dimensional scaffold for bone growth were investigated. BMSCs were isolated from the femur of rabbit, then seeded in prepared scaffolds after incubation for 28 days in vitro. In vivo: 30 New Zealand White Rabbits received bone defect in left radius and divided three treatment groups randomly: (1) BMSCs/decalcified bone matrix/fibrin glue as experimental group; (2) decalcified bone matrix/fibrin glue without cells as control group; (3) nothing was implanted into the bone defects as blank group. The observation period of specimens was 12 weeks, and were analyzed bone formation in terms of serum proteomics (2D-PAGE and MALDI-TOF-TOF-MS), hematoxylin-eosin (HE) staining, ALP staining, and Osteopontin immunofluorescence detection. The experimental group present in three peculiar kinds of proteins, whose Geninfo identifier (GI) number were 136466, 126722803, and 126723746, respectively, correspond to TTR protein, ALB protein, RBP4 protein, and the histological inspections were superior to the other group. The content of osteopontin in experimental group was significantly higher than control group (p <  0.05). The overall results indicated that a combined material being made of BMSCs/decalcified bone matrix/fibrin glue can result in successful bone formation and decalcified bone matrix/fibrin glue admixtures can be used as a scaffold for bone tissue engineering. Copyright © 2013 Wiley Periodicals, Inc.

Study of Microstructure and Mechanical Properties Effects on Workpiece Quality in Sheet Metal Extrusion Process

PubMed Central

Suriyapha, Chatkaew; Bubphachot, Bopit; Rittidech, Sampan

2015-01-01

Sheet metal extrusion is a metal forming process in which the movement of a punch penetrates a sheet metal surface and it flows through a die orifice; the extruded parts can be deflected to have an extrusion cavity and protrusion on the opposite side. Therefore, this process results in a narrow region of highly localized plastic deformation due to the formation and microstructure effect on the work piece. This research investigated the characteristics of the material-flow behavior during the formation and its effect on the microstructure of the extruded sheet metal using the finite element method (FEM). The actual parts and FEM simulation model were developed using a blank material made from AISI-1045 steel with a thickness of 5 mm; the material's behavior was determined subject to the punch penetration depths of 20%, 40%, 60%, and 80% of the sheet thickness. The results indicated the formation and microstructure effects on the sheet metal extrusion parts and defects. Namely, when increasing penetration, narrowing the die orifice the material flows through, the material was formed by extruding, and defects were visibility, and the microstructure of the material's grains' size was flat and very fine. Extrusion defects were not found in the control material flow. The region of highly localized plastic deformation affected the material gain and mechanical properties. The FEM simulation results agreed with the experimental results. Moreover, FEM could be investigated as a tool to decrease the cost and time in trial and error procedures. PMID:26229979

Prediction of Supersonic Store Separation Characteristics Including Fuselage and Stores of Noncircular Cross Section. Volume III. Appendices A and B, Details of Program I.

DTIC Science & Technology

1980-11-01

IZPT,ITH,IDEL,NTAP7,IAR,IAN,IUB, IGB(7) ,IVB,IU,IV,IW,IVA,IWA, ICP, IPHI,IYB,NAG,NAP,NAV,NAS, NASHK, NAFLD ,IAO,IDO,ISKO,TYIMI,IZIM,ISVN,ISKP,NRING,IROW...locations in blank common required in SOLVE NASHIK maximum locations in blank common required in BSHOCK NAFLD maximum locations in blank common

Initial benchmarking of a new electron-beam raster pattern generator for 130-100 nm maskmaking

NASA Astrophysics Data System (ADS)

Sauer, Charles A.; Abboud, Frank E.; Babin, Sergey V.; Chakarian, Varoujan; Ghanbari, Abe; Innes, Robert; Trost, David; Raymond, Frederick, III

2000-07-01

The decision by the Semiconductor Industry Association (SIA) to accelerate the continuing evolution to smaller linewidths is consistent with the commitment by Etec Systems, Inc. to rapidly develop new technologies for pattern generation systems with improved resolution, critical dimension (CD) uniformity, positional accuracy, and throughput. Current pattern generation designs are inadequate to meet the more advanced requirements for masks, particularly at or below the 100 nm node. Major changes to all pattern generation tools will be essential to meet future market requirements. An electron-beam (e-beam) system that is designed to meet the challenges for 130 - 100 nm device generation with extendibility to the 70-nm range will be discussed. This system has an architecture that includes a graybeam writing strategy, a new state system, and improved thermal management. Detailed changes include a pulse width modulated blanking system, per-pixel deflection, retrograde scanning multipass writing, and a column with a 50 kV accelerating voltage that supports a dose of up to 45 (mu) C/cm2 with minimal amounts of resist heating. This paper examines current issues, our approach to meeting International Technology Roadmap for Semiconductors (ITRS) requirements, and some preliminary results from a new pattern generator.

Evidence for an Intrinsic Renal Tubular Defect in Mice with Genetic Hypophosphatemic Rickets

PubMed Central

Cowgill, Larry D.; Goldfarb, Stanley; Lau, Kai; Slatopolsky, Eduardo; Agus, Zalman S.

1979-01-01

To investigate the role of parathyroid hormone (PTH) and(or) an intrinsic renal tubular reabsorptive defect for phosphate in mice with hereditary hypophosphatemic rickets, we performed clearance and micropuncture studies in hypophosphatemic mutants and nonaffected littermate controls. Increased fractional excretion of phosphate in mutants (47.2±4 vs. 30.8±2% in controls) was associated with reduced fractional and absolute reabsorption in the proximal convoluted tubule and more distal sites. Acute thyropara-thyroidectomy (TPTX) increased phosphate reabsorption in both mutants and controls with a fall in fractional phosphate excretion to ≅7.5% in both groups indicating that PTH modified the degree of phosphaturia in the intact mutants. Absolute reabsorption in the proximal tubule and beyond remained reduced in the mutants, however, possibly because of the reduced filtered load. Serum PTH levels were the same in intact mutants and normals as was renal cortical adenylate cyclase activity both before and after PTH stimulation. To evaluate the possibility that the phosphate wasting was caused by an intrinsic tubular defect that was masked by TPTX, glomerular fluid phosphate concentration was raised by phosphate infusion in TPTX mutants to levels approaching those of control mice. Phosphate excretion rose markedly and fractional reabsorption fell, but there was no change in absolute phosphate reabsorption in either the proximal tubule or beyond, indicating a persistent reabsorptive defect in the absence of PTH. We conclude that hereditary hypophosphatemia in the mouse is associated with a renal tubular defect in phosphate reabsorption, which is independent of PTH and therefore represents a specific intrinsic abnormality of phosphate transport. PMID:221535

Suppression of AKT phosphorylation restores rapamycin-based synthetic lethality in SMAD4-defective pancreatic cancer cells.

PubMed

Le Gendre, Onica; Sookdeo, Ayisha; Duliepre, Stephie-Anne; Utter, Matthew; Frias, Maria; Foster, David A

2013-05-01

mTOR has been implicated in survival signals for many human cancers. Rapamycin and TGF-β synergistically induce G1 cell-cycle arrest in several cell lines with intact TGF-β signaling pathway, which protects cells from the apoptotic effects of rapamycin during S-phase of the cell cycle. Thus, rapamycin is cytostatic in the presence of serum/TGF-β and cytotoxic in the absence of serum. However, if TGF-β signaling is defective, rapamycin induced apoptosis in both the presence and absence of serum/TGF-β in colon and breast cancer cell lines. Because genetic dysregulation of TGF-β signaling is commonly observed in pancreatic cancers-with defects in the Smad4 gene being most prevalent, we hypothesized that pancreatic cancers would display a synthetic lethality to rapamycin in the presence of serum/TGF-β. We report here that Smad4-deficient pancreatic cancer cells are killed by rapamycin in the absence of serum; however, in the presence of serum, we did not observe the predicted synthetic lethality with rapamycin. Rapamycin also induced elevated phosphorylation of the survival kinase Akt at Ser473. Suppression of rapamycin-induced Akt phosphorylation restored rapamycin sensitivity in Smad4-null, but not Smad4 wild-type pancreatic cancer cells. This study shows that the synthetic lethality to rapamycin in pancreatic cancers with defective TGF-β signaling is masked by rapamycin-induced increases in Akt phosphorylation. The implication is that a combination of approaches that suppress both Akt phosphorylation and mTOR could be effective in targeting pancreatic cancers with defective TGF-β signaling. ©2013 AACR.

[Experimental study on loading naringin composite scaffolds for repairing rabbit osteochondral defects].

PubMed

Huang, Junbo; Wang, Shiyong; Zhang, Xiaomin; Li, Gen; Ji, Puzhong; Zhao, Hongbin

2017-04-01

To investigate the performance of loading naringin composite scaffolds and its effects on repair of osteochondral defects. The loading naringin and unloading naringin sustained release microspheres were prepared by W/O/W method; with the materials of the attpulgite and the collagen type I, the loading naringin, unloading naringin, and loading transforming growth factor β 1 (TGF-β 1 ) osteochondral composite scaffolds were constructed respectively by "3 layers sandwich method". The effect of sustained-release of loading naringin microspheres, the morphology of the composite scaffolds, and the biocompatibility were evaluated respectively by releasing in vitro , scanning electron microscope, and cell counting kit 8. Forty Japanese white rabbits were randomly divided into groups A, B, C, and D, 10 rabbits each group. After a osteochondral defect of 4.5 mm in diameter and 4 mm in depth was made in the intercondylar fossa of two femurs. Defect was not repaired in group A (blank control), and defect was repaired with unloading naringin composite scaffolds (negative control group), loading naringin composite scaffolds (experimental group), and loading TGF-β 1 composite scaffolds (positive control group) in groups B, C, and D respectively. At 3 and 6 months after repair, the intercondylar fossa was harvested for the general, HE staining, and toluidine blue staining to observe the repair effect. Western blot was used to detect the expression of collagen type II in the new cartilage. Loading naringin microspheres had good effect of sustained-release; the osteochondral composite scaffolds had good porosity; the cell proliferation rate on loading naringin composite scaffold was increased significantly when compared with unloading naringin scaffold ( P <0.05). General observation revealed that defect range of groups C and D was reduced significantly when compared with groups A and B at 3 months after repair; at 6 months after repair, defects of group C were covered by new cartilage, and new cartilage well integrated with the adjacent cartilage in group D. The results of histological staining revealed that defects were filled with a small amount of fibrous tissue in groups A and B, and a small amount of new cartilage in groups C and D at 3 months after repair; new cartilage of groups C and D was similar to normal cartilage, but defects were filled with a large amount of fibrous tissue in groups A and B at 6 months after repair. The expression of collagen type II in groups C and D was significantly higher than that in groups A and B ( P <0.05), but no significant difference was found between groups C and D ( P >0.05). Loading naringin composite scaffolds have good biocompatibility and effect in repair of rabbit articular osteochondral defects.

[Comparison of the translucency and color masking effect of the zirconia ceramics made by milling and gel deposition].

PubMed

Cui, X Y; Tong, D; Wang, X Z; Shen, Z J

2018-02-18

Three kinds of zirconia specimens were made respectively by milling of the prisintered blocks and by three dimensional (3D) gel deposition for in vitro evaluation of their optical translucency under three different thicknesses and their color masking effect on discolored teeth. The study aims for establishing the principle for guiding the materials selection in clinical practice. Ninety A2-colored zirconia disc specimens with diameter of 14 mm were prepared and were divided into three groups (n=30). (1) Group CZ, by milling of the presintered blanks; (2) Group NZW, by 3D gel deposition, without a color masking opaque inner layer; (3) Group NZY, by 3D gel deposition, with a color masking opaque inner layer. Furthermore, each group was divided into three sub-groups (n=10) according to the sample thickness, i.e., 0.6, 1.0 and 1.5 mm, respectively. The maxillary anterior teeth with severe discoloration, extracted owing to periodontal disease, were collected and embedded. By gentle gridding and polishing a plane, larger than 6 mm2×6 mm 2 , was generated on the labial surface of each tooth. Chromatic values(CIE1976-L * a * b * ) of the zirconia samples in the nine sub-groups were measured by the spectrophotometer Crystaleye in front of the black or white background in a cassette, and the translucency parameter (TP) values were calculated for each sample. Thereafter the zirconia specimens were bonded onto the labial surface of the polished teeth for measuring the chromatic values, using the chromatic value of the medium 1/3 of the standardized Vita A2 as a control. The color aberration ΔE between each zirconia specimen and the control value was calculated, respectively. The results were statistically analyzed by One-way ANOVA and Bonferroni. (1) The optical transparency of the three kinds of zirconia disc specimens with the thickness of 0.6, 1.0 and 1.5 mm was 14.09, 12.31 and 10.45 for group CZ; 19.84, 16.54 and 12.44 for group NZW;14.81, 13.16 and 11.92 for group NZY. In each group, the degree of optical transparency of the specimens showed a clear tendency as in the sub-group 0.6 mm >1.0 mm >1.5 mm. The TP value of the specimens in the three groups with the same thickness showed a tendency of the group NZW >group NZY >group CZ. (2) After bonding onto the polished labial surface of the teeth, the color aberration ΔE of the specimens with the thickness of 0.6, 1.0 and 1.5 mm was calculated to be 10.77, 9.94 and 8.50 for group CZ; 6.84, 5.89 and 5.29 for group NZW; 4.16, 3.92 and 3.67 for group NZY. In each group, the color aberration of the specimens showed a clear tendency as in the sub-group 0.6 mm >1.0 mm >1.5 mm; the color aberration of the three groups with the same thickness was in the order of the group CZ >group NZW >group NZY. In all the specimen groups with a fixed specimen thickness, the optical translucency of the specimen was the highest in group NZW made by 3D gel deposition, and the best color masking effect was obtained in specimens with a color masking opaque inner layer in group NZY, where a thickness of 0.6 mm was sufficient enough for obtaining the ideal color masking effect.

Radiocarbon Analysis of Individual Amino Acids: Carbon Blank Quantification for a Small-Sample High-Pressure Liquid Chromatography Purification Method.

PubMed

Bour, Amy L; Walker, Brett D; Broek, Taylor A B; McCarthy, Matthew D

2016-04-05

Compound-specific radiocarbon analysis (CSRA) of amino acids (AAs) is of great interest as a proxy for organic nitrogen (N) cycling rates, dating archeological bone collagen, and investigating processes shaping the biogeochemistry of global N reservoirs. However, recoverable quantities of individual compounds from natural samples are often insufficient for radiocarbon ((14)C) analyses (<50 μg C). Constraining procedural carbon (C) blanks and their isotopic contributions is critical for reporting of accurate CSRA measurements. Here, we report the first detailed quantification of C blanks (including sources, magnitudes, and variability) for a high-pressure liquid chromatography (HPLC) method designed to purify individual AAs from natural samples. We used pairs of AA standards with either modern (M) or dead (D) fraction modern (Fm) values to quantify MC and DC blanks within several chromatographic regions. Blanks were determined for both individual and mixed AA standard injections with peak loadings ranging from 10 to 85 μg C. We found 0.8 ± 0.4 μg of MC and 1.0 ± 0.5 μg of DC were introduced by downstream sample preparation (drying, combustion, and graphitization), which accounted for essentially the entire procedural blank for early eluting AAs. For late-eluting AAs, higher eluent organic content and fraction collected volumes contributed to total blanks of 1.5 ± 0.75 μg of MC and 3.0 ± 1.5 μg of DC. Our final measurement uncertainty for 20 μg of C of most AAs was ±0.02 Fm, although sample size requirements are larger for similar uncertainty in late-eluting AAs. These results demonstrate the first CSRA protocol for many protein AAs with uncertainties comparable to the lowest achieved in prior studies.

ZERODUR thermo-mechanical modelling and advanced dilatometry for the ELT generation

NASA Astrophysics Data System (ADS)

Jedamzik, Ralf; Kunisch, Clemens; Westerhoff, Thomas

2016-07-01

Large amounts of low thermal expansion material are required for the upcoming ELT projects. The main mirror is designed using several hundreds of hexagonal 1.4 m sized mirror blanks. The M2 and M3 are monolithic 4 m class mirror blanks. The mirror blank material needs to fulfill tight requirements regarding CTE specification and homogeneity. Additionally the mirror blanks need to be dimensionally stable for more than 30 years. In particular, stress effects due to the changes in the environment shall not entail shape variation of more than 0.5 μm PV within 30 years. In 2010 SCHOTT developed a physically based model to describe the thermal and mechanical long time behavior of ZERODUR. The model enables simulation of the long time behavior of ZERODUR mirror blanks under realistic mechanical and thermal constraints. This presentation shows FEM simulation results on the long time behavior of the ELT M1, M2 and M3 mirror blanks under different loading conditions. Additionally the model results will be compared to an already 15 years lasting long time measurement of a ZERODUR sample at the German federal physical standardization institute (PTB). In recent years SCHOTT pushed the push rod dilatometer measurement technology to its limit. With the new Advanced Dilatometer CTE measurement accuracies of +- 3 ppb/K and reproducibilities of better 1 ppb/K have been achieved. The new Advanced Dilatometer exhibits excellent long time stability.

Enhanced capture rate for haze defects in production wafer inspection

NASA Astrophysics Data System (ADS)

Auerbach, Ditza; Shulman, Adi; Rozentsvige, Moshe

2010-03-01

Photomask degradation via haze defect formation is an increasing troublesome yield problem in the semiconductor fab. Wafer inspection is often utilized to detect haze defects due to the fact that it can be a bi-product of process control wafer inspection; furthermore, the detection of the haze on the wafer is effectively enhanced due to the multitude of distinct fields being scanned. In this paper, we demonstrate a novel application for enhancing the wafer inspection tool's sensitivity to haze defects even further. In particular, we present results of bright field wafer inspection using the on several photo layers suffering from haze defects. One way in which the enhanced sensitivity can be achieved in inspection tools is by using a double scan of the wafer: one regular scan with the normal recipe and another high sensitivity scan from which only the repeater defects are extracted (the non-repeater defects consist largely of noise which is difficult to filter). Our solution essentially combines the double scan into a single high sensitivity scan whose processing is carried out along two parallel routes (see Fig. 1). Along one route, potential defects follow the standard recipe thresholds to produce a defect map at the nominal sensitivity. Along the alternate route, potential defects are used to extract only field repeater defects which are identified using an optimal repeater algorithm that eliminates "false repeaters". At the end of the scan, the two defect maps are merged into one with optical scan images available for all the merged defects. It is important to note, that there is no throughput hit; in addition, the repeater sensitivity is increased relative to a double scan, due to a novel runtime algorithm implementation whose memory requirements are minimized, thus enabling to search a much larger number of potential defects for repeaters. We evaluated the new application on photo wafers which consisted of both random and haze defects. The evaluation procedure involved scanning with three different recipe types: Standard Inspection: Nominal recipe with a low false alarm rate was used to scan the wafer and repeaters were extracted from the final defect map. Haze Monitoring Application: Recipe sensitivity was enhanced and run on a single field column from which on repeating defects were extracted. Enhanced Repeater Extractor: Defect processing included the two parallel routes: a nominal recipe for the random defects and the new high sensitive repeater extractor algorithm. The results showed that the new application (recipe #3) had the highest capture rate on haze defects and detected new repeater defects not found in the first two recipes. In addition, the recipe was much simpler to setup since repeaters are filtered separately from random defects. We expect that in the future, with the advent of mask-less lithography and EUV lithography, the monitoring of field and die repeating defects on the wafer will become a necessity for process control in the semiconductor fab.

Investigation of 2,4-dinitrophenylhydrazine impregnated adsorbent tubes for the collection of airborne aldehydes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Holdren, M.W.; Smith, D.L.; Russell, N.K.

1988-06-01

The objective of the study was to investigate the use of 2,4-dinitrophenylhydrazine (DNPH) impregnated adsorbents for sampling airborne aldehydes. Experimental results using a 17 cu m environmental chamber and various spiked amounts of aldehyde material (low ppb levels) showed that the DNPH coated cartridge and the DNPH/acetonitrile impinger methods gave equivalent results. Blank levels of the DNPH-coated cartridges were studied as a function of storage time using various containers and temperature conditions. Canisters pressurized with zero-grade nitrogen provided the best storage device. Lower blank levels were also obtained when the cartridges were stored at lower temperatures. Blank levels appear tomore » equilibrate after six days of storage. To assure that quality data will be obtained, cartridges should be grouped according to batch number and blank levels should be determined prior to any field monitoring effort. Blank cartridge levels should be an order of magnitude lower than sample cartridge level. High performance liquid chromatography with UV detection proved to be a sensitive and stable analytical method for the DNPH derivatives.« less

Attentional Lapses in Attention-Deficit/Hyperactivity Disorder: Blank Rather Than Wandering Thoughts.

PubMed

Van den Driessche, Charlotte; Bastian, Mikaël; Peyre, Hugo; Stordeur, Coline; Acquaviva, Éric; Bahadori, Sara; Delorme, Richard; Sackur, Jérôme

2017-10-01

People with attention-deficit/hyperactivity disorder (ADHD) have difficulties sustaining their attention on external tasks. Such attentional lapses have often been characterized as the simple opposite of external sustained attention, but the different types of attentional lapses, and the subjective experiences to which they correspond, remain unspecified. In this study, we showed that unmedicated children (ages 6-12) with ADHD, when probed during a standard go/no-go task, reported more mind blanking (a mental state characterized by the absence of reportable content) than did control participants. This increase in mind blanking happened at the expense of both focused and wandering thoughts. We also found that methylphenidate reverted the level of mind blanking to baseline (i.e., the level of mind blanking reported by control children without ADHD). However, this restoration led to mind wandering more than to focused attention. In a second experiment, we extended these findings to adults who had subclinical ADHD. These results suggest that executive functions impaired in ADHD are required not only to sustain external attention but also to maintain an internal train of thought.

Updated study reporting levels (SRLs) for trace-element data collected for the California Groundwater Ambient Monitoring and Assessment (GAMA) Priority Basin Project, October 2009-March 2013

USGS Publications Warehouse

Davis, Tracy A.; Olsen, Lisa D.; Fram, Miranda S.; Belitz, Kenneth

2014-01-01

Groundwater samples have been collected in California as part of statewide investigations of groundwater quality conducted by the U.S. Geological Survey for the Groundwater Ambient Monitoring and Assessment (GAMA) Priority Basin Project (PBP). The GAMA-PBP is being conducted in cooperation with the California State Water Resources Control Board to assess and monitor the quality of groundwater resources used for drinking-water supply and to improve public knowledge of groundwater quality in California. Quality-control samples (source-solution blanks, equipment blanks, and field blanks) were collected in order to ensure the quality of the groundwater sample results. Olsen and others (2010) previously determined study reporting levels (SRLs) for trace-element results based primarily on field blanks collected in California from May 2004 through January 2008. SRLs are raised reporting levels used to reduce the likelihood of reporting false detections attributable to contamination bias. The purpose of this report is to identify any changes in the frequency and concentrations of detections in field blanks since the last evaluation and update the SRLs for more recent data accordingly. Constituents analyzed were aluminum (Al), antimony (Sb), arsenic (As), barium (Ba), beryllium (Be), boron (B), cadmium (Cd), chromium (Cr), cobalt (Co), copper (Cu), iron (Fe), lead (Pb), lithium (Li), manganese (Mn), molybdenum (Mo), nickel (Ni), selenium (Se), silver (Ag), strontium (Sr), thallium (Tl), tungsten (W), uranium (U), vanadium (V), and zinc (Zn). Data from 179 field blanks and equipment blanks collected from March 2006 through March 2013 by the GAMA-PBP indicated that for trace elements that had a change in detection frequency and concentration since the previous review, the shift occurred near October 2009, in conjunction with a change in the capsule filters used by the study. Results for 89 field blanks and equipment blanks collected from October 2009 through March 2013 were evaluated for potential contamination bias by using the same approach developed by Olsen and others (2010). Some data collected by the National Water-Quality Assessment (NAWQA) Program for the Southern California Coastal Drainages study unit were included to supplement the GAMA-PBP data. The detection frequency and upper threshold of potential contamination bias (BD-90/90) were determined from field-blank and equipment-blank data for each trace element. The BD-90/90 is the 90th percentile concentration of potential extrinsic contamination calculated by using the binomial probability distribution for greater than 90 percent confidence. Additionally, data from laboratory blanks and blind blanks analyzed by the National Water Quality Laboratory (NWQL) during water years 2010 through 2013, and compiled by the USGS Branch of Quality Systems (BQS), were considered for each trace element. These results were compared to each constituent’s reporting level to determine whether an SRL was necessary to minimize the potential for detections in the groundwater samples, attributed principally to contamination bias. Results of the evaluation were used to set SRLs for trace-element data for about 1,135 samples of groundwater collected by the GAMA-PBP between October 2009 and March 2013. Ten trace elements analyzed (Sb, As, Be, B, Cd, Li, Se, Ag, Tl, and U) had blank results that did not necessitate establishing SRLs during this review or the review by Olsen and others (2010). Five trace elements analyzed (Al, Ba, Cr, Sr, and V) had blank results that necessitated establishing an SRL during the previous review but did not need an SRL starting October 2009. One trace element (Fe) had field and laboratory-blank results that necessitated keeping the previous SRL (6 micrograms per liter [μg/L]). Two trace elements (Ni and W) had quality-control results that warranted decreasing the previous SRL, and five trace elements (Cu, Pb, Mn, Mo, and Zn) had field, laboratory, or blind blank results that warranted establishing an SRL for the first time or increasing the previous SRL. SRLs for Cu (2.1 μg/L), Pb (0.82 μg/L), Mn (0.66 μg/L), Mo (0.023 μg/L), Ni (0.21 μg/L), W (0.023 μg/L), and Zn (6.2 μg/L) were changed to these levels starting October 2009, based on the BD-90/90 concentration for field blanks or the 99th percentile concentration for laboratory or blind blanks. The SRL for Fe was maintained at 6 μg/L, based on the minimum laboratory reporting level for iron. SRLs for these eight constituents were at least an order of magnitude below the regulatory benchmarks established for drinking water for health and aesthetic purposes; therefore, the practice of reporting concentrations below the SRLs as less than or equal to (≤) the measured value would not prevent the identification of values greater than the drinking-water benchmarks. Co was detected in 99 percent of field blanks, and with a BD-90/90 concentration of 0.38 μg/L, all groundwater results starting October 2009 were coded as “reviewed and rejected.” Co does not currently have a regulatory benchmark for drinking water. The primary sources of contamination for trace elements inferred from this review are the equipment or processes used in the field to collect the samples or in the laboratory. In particular, contamination in field blanks of Co and Mn was attributed to the high-capacity 0.45-micrometer pore-size capsule filters that were in regular use beginning in October 2009 by several USGS programs, including the GAMA-PBP and NAWQA Program, for filtering samples for analysis of trace elements. The SRLs determined in this report are intended to be used for GAMA groundwater-quality data for samples collected October 2009 through March 2013, or for as long as quality-control data indicate contamination similar to what was observed in this report; quality-control data should be continuously reviewed and SRLs re-assessed on at least a study-unit basis.

Applications of MICP source for next-generation photomask process

NASA Astrophysics Data System (ADS)

Kwon, Hyuk-Joo; Chang, Byung-Soo; Choi, Boo-Yeon; Park, Kyung H.; Jeong, Soo-Hong

2000-07-01

As critical dimensions of photomask extends into submicron range, critical dimension uniformity, edge roughness, macro loading effect, and pattern slope become tighter than before. Fabrication of photomask relies on the ability to pattern features with anisotropic profile. To improve critical dimension uniformity, dry etcher is one of the solution and inductively coupled plasma (ICP) sources have become one of promising high density plasma sources for dry etcher. In this paper, we have utilized dry etcher system with multi-pole ICP source for Cr etch and MoSi etch and have investigated critical dimension uniformity, slope, and defects. We will present dry etch process data by process optimization of newly designed dry etcher system. The designed pattern area is 132 by 132 mm2 with 23 by 23 matrix test patterns. 3 (sigma) of critical dimension uniformity is below 12 nm at 0.8 - 3.0 micrometers . In most cases, we can obtain zero defect masks which is operated by face- down loading.

Defect generation in silicon dioxide from synchrotron radiation below 41 eV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Williams, C. K.; Reisman, A.; Bhattacharya, P.

1989-07-01

Generation of fixed positive charge, neutral electron traps, and fixednegative charge in SiO/sub 2/ due to exposure to x radiation in the photon energyrange below 41 eV from a synchrotron source is reported. For constant incidentx-radiation exposure levels of 120 mJ/cm/sup 2/ with both monochromatic andbroadband radiation, the number of defects generated in the monitoring deviceswas at or below the detection limit of the equipment. This is in sharp contrastwith the results obtained at photon energies above 300 eV reported earlier (C.K. Williams, A. Reisman, P. K. Bhattacharya, and W. Ng, J. Appl. Phys./bold 64/, 1145 (1988)) in which amore » large number of each of the three defectsmentioned above were generated. The lack of damage indicates that the problemsassociated with x-ray-induced insulator damage due to x-ray lithography may besolved by tailoring the photon energy, provided suitable mask and photoresistmaterials can be developed.« less

High-volume manufacturing compatible dry development rinse process (DDRP): patterning and defectivity performance for EUVL

NASA Astrophysics Data System (ADS)

Sayan, Safak; Vanelderen, Pieter; Hetel, Iulian; Chan, BT; Raghavan, Praveen; Blanco, Victor; Foubert, Philippe; D'urzo, Lucia; De Simone, Danilo; Vandenberghe, Geert

2017-04-01

There are many knobs available that change the chemical and physical properties of the photoresists to "break" the RLS (Resolution, Sensitivity, Line edge/width roughness) trade-off, however those are not enough today to realize a material to satisfy all requirements at once for 7nm technology and beyond. DDRP improves the ultimate achievable resolution via pattern collapse mitigation, hence the priority of requirements for the EUV photoresist development may be changed with more focus on Sensitivity and LWR. This may potentially provide a new conceptual approach towards EUV PR development for DDRP applications. We have previously demonstrated pattern collapse (PC) mitigation via DDRP on different EUVL photoresists (including different resist platforms), achieving ultimate resolution and exposure latitude improvements [1,2]. In this contribution, we report patterning and material defect performance of HVM compatible (all aqueous) dry development rinse material. We will also report on process window improvement on 2-dimensional metal structures towards standard cell size reduction with elimination of mask layer(s) using single EUV exposure.

Improving reticle defect disposition via fully automated lithography simulation

NASA Astrophysics Data System (ADS)

Mann, Raunak; Goodman, Eliot; Lao, Keith; Ha, Steven; Vacca, Anthony; Fiekowsky, Peter; Fiekowsky, Dan

2016-03-01

Most advanced wafer fabs have embraced complex pattern decoration, which creates numerous challenges during in-fab reticle qualification. These optical proximity correction (OPC) techniques create assist features that tend to be very close in size and shape to the main patterns as seen in Figure 1. A small defect on an assist feature will most likely have little or no impact on the fidelity of the wafer image, whereas the same defect on a main feature could significantly decrease device functionality. In order to properly disposition these defects, reticle inspection technicians need an efficient method that automatically separates main from assist features and predicts the resulting defect impact on the wafer image. Analysis System (ADAS) defect simulation system[1]. Up until now, using ADAS simulation was limited to engineers due to the complexity of the settings that need to be manually entered in order to create an accurate result. A single error in entering one of these values can cause erroneous results, therefore full automation is necessary. In this study, we propose a new method where all needed simulation parameters are automatically loaded into ADAS. This is accomplished in two parts. First we have created a scanner parameter database that is automatically identified from mask product and level names. Second, we automatically determine the appropriate simulation printability threshold by using a new reference image (provided by the inspection tool) that contains a known measured value of the reticle critical dimension (CD). This new method automatically loads the correct scanner conditions, sets the appropriate simulation threshold, and automatically measures the percentage of CD change caused by the defect. This streamlines qualification and reduces the number of reticles being put on hold, waiting for engineer review. We also present data showing the consistency and reliability of the new method, along with the impact on the efficiency of in-fab reticle qualification.

Seeing Red and Shooting Blanks: A Study of Red Quasars and Blank Field X-Ray Sources

NASA Technical Reports Server (NTRS)

Oliversen, Ronald J. (Technical Monitor); Elvis, Martin

2004-01-01

One type of "Blank Field X-ray Source" is now being seen in deep Chandra and XMM-Newton surveys. These are the newly dubbed "XBONGs" (X-ray Bright, Optically Normal Galaxies). The study of the brighter counterparts from ROSAT and XMM- Newton serendipitous surveys is therefore of renewed interest and topicality. We continue to define the properties of the ROSAT sample which is the basis of this grant. We expect to publish the SEDs of these sources soon.

SL2+: H5 use case

NASA Astrophysics Data System (ADS)

Ito, Kosuke; Liu, Steven; Lee, Isaac; Dover, Russell; Yu, Paul

2008-10-01

Photomask contamination inspections, whether performed at maskshops as an outgoing inspection or at wafer fabs for incoming shipping and handling or progressive defect monitoring, have been performed by KLA-Tencor STARlight systems for a number of design nodes. STARlight has evolved since it first appeared on the 3xx generation of KLA-Tencor mask inspection tools. It was improved with the TeraStar (also known as SLF) based tools with the SL1 algorithm. SL2 first appeared on the TeraScan systems (also known as 5xx) and has been widely adopted in both mask shops and wafer fabs. Design rules continue to advance as do inspection challenges. Advances in computer processing power have enabled more complex and powerful algorithms to be developed and applied to the STARlight technology. The current generation of STARlight, which is known as SL2+, implements improved modeling fidelity as well as a completely new paradigm to the existing STARlight technology known as HiRes5, or simply "H5". H5 is integrated seamlessly within SL2+ and provides die-to-die-like performance in both transmitted and reflected light, in addition to the STARlight detection, in unit time. It achieves this by automatically identifying repeating structures in both X and Y directions and applying image alignment and difference threshold. A leading mask shop partnered with KLA-Tencor in order to evaluate SL2+ at its facility. SL2+ demonstrated a high level of sensitivity on all test reticles, with good inspectability on advanced production reticles. High sensitivity settings were used for 45 nm HP and smaller design rule masks and low false detections were achieved. H5 provided additional sensitivity on production plates, demonstrating the ability to extend the use of SL2+ to cover 32 nm DR plate inspections. This paper reports the findings and results of this evaluation.

Preliminary evaluation of new polymer matrix for solid-phase extraction of nonylphenol from water samples.

PubMed

Guerreiro, António; Soares, Ana; Piletska, Elena; Mattiasson, Bo; Piletsky, Sergey

2008-03-31

Molecularly imprinted (MIP) and blank polymers with affinity for nonylphenol were designed using computational modelling. Chromatographic tests demonstrated higher affinity of imprinted polymers towards the template nonylphenol as compared with blank polymers. The performance of both polymers in solid-phase extraction was however very similar. Both blank and imprinted polymers appeared to be suitable for the removal and pre-concentration of nonylphenol from contaminated water samples with 99% efficiency of the recovery. The commercial resins PH(EC) (Biotage) and C18 (Varian) tested in the same conditions used for comparative purposes had recovery rate <84%. The polymer capacity for nonylphenol was 231 mg g(-1) for blank and 228 mg g(-1) for MIP. The synthesised materials can have significance for sample pre-concentration and environmental analysis of this class of compounds.

Blank corrections for ramped pyrolysis radiocarbon dating of sedimentary and soil organic carbon.

PubMed

Fernandez, Alvaro; Santos, Guaciara M; Williams, Elizabeth K; Pendergraft, Matthew A; Vetter, Lael; Rosenheim, Brad E

2014-12-16

Ramped pyrolysis (RP) targets distinct components of soil and sedimentary organic carbon based on their thermochemical stabilities and allows the determination of the full spectrum of radiocarbon ((14)C) ages present in a soil or sediment sample. Extending the method into realms where more precise ages are needed or where smaller samples need to be measured involves better understanding of the blank contamination associated with the method. Here, we use a compiled data set of RP measurements of samples of known age to evaluate the mass of the carbon blank and its associated (14)C signature, and to assess the performance of the RP system. We estimate blank contamination during RP using two methods, the modern-dead and the isotope dilution method. Our results indicate that during one complete RP run samples are contaminated by 8.8 ± 4.4 μg (time-dependent) of modern carbon (MC, fM ∼ 1) and 4.1 ± 5.5 μg (time-independent) of dead carbon (DC, fM ∼ 0). We find that the modern-dead method provides more accurate estimates of uncertainties in blank contamination; therefore, the isotope dilution method should be used with caution when the variability of the blank is high. Additionally, we show that RP can routinely produce accurate (14)C dates with precisions ∼100 (14)C years for materials deposited in the last 10,000 years and ∼300 (14)C years for carbon with (14)C ages of up to 20,000 years.

Three-Dimensional Magnetic Resonance Imaging Quantification of Glenoid Bone Loss Is Equivalent to 3-Dimensional Computed Tomography Quantification: Cadaveric Study.

PubMed

Yanke, Adam B; Shin, Jason J; Pearson, Ian; Bach, Bernard R; Romeo, Anthony A; Cole, Brian J; Verma, Nikhil N

2017-04-01

To assess the ability of 3-dimensional (3D) magnetic resonance imaging (MRI, 1.5 and 3 tesla [T]) to quantify glenoid bone loss in a cadaveric model compared with the current gold standard, 3D computed tomography (CT). Six cadaveric shoulders were used to create a bone loss model, leaving the surrounding soft tissues intact. The anteroposterior (AP) dimension of the glenoid was measured at the glenoid equator and after soft tissue layer closure the specimen underwent scanning (CT, 1.5-T MRI, and 3-T MRI) with the following methods (0%, 10%, and 25% defect by area). Raw axial data from the scans were segmented using manual mask manipulation for bone and reconstructed using Mimics software to obtain a 3D en face glenoid view. Using calibrated Digital Imaging and Communications in Medicine images, the diameter of the glenoid at the equator and the area of the glenoid defect was measured on all imaging modalities. In specimens with 10% or 25% defects, no difference was detected between imaging modalities when comparing the measured defect size (10% defect P = .27, 25% defect P = .73). All 3 modalities demonstrated a strong correlation with the actual defect size (CT, ρ = .97; 1.5-T MRI, ρ = .93; 3-T MRI, ρ = .92, P < .0001). When looking at the absolute difference between the actual and measured defect area, no significance was noted between imaging modalities (10% defect P = .34, 25% defect P = .47). The error of 3-T 3D MRI increased with increasing defect size (P = .02). Both 1.5- and 3-T-based 3D MRI reconstructions of glenoid bone loss correlate with measurements from 3D CT scan data and actual defect size in a cadaveric model. Regardless of imaging modality, the error in bone loss measurement tends to increase with increased defect size. Use of 3D MRI in the setting of shoulder instability could obviate the need for CT scans. The goal of our work was to develop a reproducible method of determining glenoid bone loss from 3D MRI data and hence eliminate the need for CT scans in this setting. This will lead to decreased cost of care as well as decreased radiation exposure to patients. The long-term goal is a fully automated system that is as approachable for clinicians as current 3D CT technology. Copyright © 2016 Arthroscopy Association of North America. Published by Elsevier Inc. All rights reserved.

Electron mobility enhancement in ZnO thin films via surface modification by carboxylic acids

NASA Astrophysics Data System (ADS)

Spalenka, Josef W.; Gopalan, Padma; Katz, Howard E.; Evans, Paul G.

2013-01-01

Modifying the surface of polycrystalline ZnO films using a monolayer of organic molecules with carboxylic acid attachment groups increases the field-effect electron mobility and zero-bias conductivity, resulting in improved transistors and transparent conductors. The improvement is consistent with the passivation of defects via covalent bonding of the carboxylic acid and is reversible by exposure to a UV-ozone lamp. The properties of the solvent used for the attachment are crucial because solvents with high acid dissociation constants (Ka) for carboxylic acids lead to high proton activities and etching of the nanometers-thick ZnO films, masking the electronic effect.

Calibration of a Modified Andersen Bacterial Aerosol Sampler

PubMed Central

May, K. R.

1964-01-01

A study of the flow regime in the commercial Andersen sampler revealed defects in the sampling of the larger airborne particles. Satisfactory sampling was obtained by redesigning the hole pattern of the top stages and adding one more stage to extend the range of the instrument. A new, rational hole pattern is suggested for the lower stages. With both patterns a special colony-counting mask can be used to facilitate the assay. A calibration of the modified system is presented which enables particle size distribution curves to be drawn from the colony counts. Images FIG. 2 FIG. 3 FIG. 4 FIG. 5 FIG. 6 FIG. 7 FIG. 8 PMID:14106938

Ripple-aware optical proximity correction fragmentation for back-end-of-line designs

NASA Astrophysics Data System (ADS)

Wang, Jingyu; Wilkinson, William

2018-01-01

Accurate characterization of image rippling is critical in early detection of back-end-of-line (BEOL) patterning weakpoints, as most defects are strongly associated with excessive rippling that does not get effectively compensated by optical proximity correction (OPC). We correlate image contour with design shapes to account for design geometry-dependent rippling signature, and explore the best practice of OPC fragmentation for BEOL geometries. Specifically, we predict the optimum contour as allowed by the lithographic process and illumination conditions and locate ripple peaks, valleys, and inflection points. This allows us to identify potential process weakpoints and segment the mask accordingly to achieve the best correction results.

Dental enamel defects in German medieval and early-modern-age populations.

PubMed

Lang, J; Birkenbeil, S; Bock, S; Heinrich-Weltzien, R; Kromeyer-Hauschild, K

2016-11-01

Aim of this study was to investigate the frequency and type of developmental defects of enamel (DDE) in a medieval and an early-modern-age population from Thuringia, Germany. Sixty-six skeletons subdivided into 31 single burials (12 th /13 th c.) and 35 individuals buried in groups (15 th /16 th c.) were examined. DDE were classified on 1,246 teeth according to the DDE index. Molar-incisor-hypomineralisation (MIH), a special type of DDE, was recorded according to the European Academy of Paediatric Dentistry (EAPD) criteria. DDE was found in 89.4% of the individuals (single burials 90.3% and group burials 88.6%). Hypoplastic pits were the most frequent defect in primary teeth and linear enamel hypoplasia (LEH) in permanent teeth. 13 individuals (24.1%) showed at least one hypomineralised permanent tooth, 12.2% had MIH on at least one first permanent molar and 10.0% in permanent incisors. Second primary molars were affected in 8.0% of the children and juveniles. No individual suffered from affected molars and incisors in combination. Endogenous factors like nutritional deficiencies and health problems in early childhood could have been aetiological reasons of DDE and MIH. The frequency of DDE and MIH might have been masked by extended carious lesions, dental wear and ante-mortem tooth loss.

Vertical ridge augmentation using an equine bone and collagen block infused with recombinant human platelet-derived growth factor-BB: a randomized single-masked histologic study in non-human primates.

PubMed

Nevins, Myron; Al Hezaimi, Khalid; Schupbach, Peter; Karimbux, Nadeem; Kim, David M

2012-07-01

This study tests the effectiveness of hydroxyapatite and collagen bone blocks of equine origin (eHAC), infused with recombinant human platelet-derived growth factor-BB (rhPDGF-BB), to augment localized posterior mandibular defects in non-human primates (Papio hamadryas). Bilateral critical-sized defects simulating severe atrophy were created at the time of the posterior teeth extraction. Test and control blocks (without growth factor) were randomly grafted into the respective sites in each non-human primate. All sites exhibited vertical ridge augmentation, with physiologic hard- and soft-tissue integration of the blocks when clinical and histologic examinations were done at 4 months after the vertical ridge augmentation procedure. There was a clear, although non-significant, tendency to increased regeneration in the test sites. As in the first two preclinical studies in this series using canines, experimental eHAC blocks infused with rhPDGF-BB proved to be a predictable and technically viable method to predictably regenerate bone and soft tissue in critical-sized defects. This investigation supplies additional evidence that eHAC blocks infused with rhPDGF-BB growth factor is a predictable and technically feasible option for vertical augmentation of severely resorbed ridges.

Enabling high speed friction stir welding of aluminum tailor welded blanks

NASA Astrophysics Data System (ADS)

Hovanski, Yuri

Current welding technologies for production of aluminum tailor-welded blanks (TWBs) are utilized in low-volume and niche applications, and have yet to be scaled for the high-volume vehicle market. This study targeted further weight reduction, part reduction, and cost savings by enabling tailor-welded blank technology for aluminum alloys at high-volumes. While friction stir welding (FSW) has traditionally been applied at linear velocities less than one meter per minute, high volume production applications demand the process be extended to higher velocities more amenable to cost sensitive production environments. Unfortunately, weld parameters and performance developed and characterized at low to moderate welding velocities do not directly translate to high speed linear friction stir welding. Therefore, in order to facilitate production of high volume aluminum FSW components, parameters were developed with a minimum welding velocity of three meters per minute. With an emphasis on weld quality, welded blanks were evaluated for post-weld formability using a combination of numerical and experimental methods. Evaluation across scales was ultimately validated by stamping full-size production door inner panels made from dissimilar thickness aluminum tailor-welded blanks, which provided validation of the numerical and experimental analysis of laboratory scale tests.

CTEPP NC DATA QA/QC RESULTS

EPA Science Inventory

This data set contains the method performance results. This includes field blanks, method blanks, duplicate samples, analytical duplicates, matrix spikes, and surrogate recovery standards.

The Children’s Total Exposure to Persistent Pesticides and Other Persistent Pollutant (...

Porous mandrels provide uniform deformation in hydrostatic powder metallurgy

NASA Technical Reports Server (NTRS)

Gripshover, P. J.; Hanes, H. D.

1967-01-01

Porous copper mandrels prevent uneven deformation of beryllium machining blanks. The beryllium powder is arranged around these mandrels and hot isostatically pressed to form the blanks. The mandrels are then removed by leaching.

76 FR 37063 - Marine Mammals; File No. 16510

Federal Register 2010, 2011, 2012, 2013, 2014

2011-06-24

... Blank Park Zoo [Kevin V. Drees, Responsible Party], 7401 SW. Ninth, Des Moines, IA 50315, has applied in... Vancouver Aquarium, Vancouver, Canada for purposes of public display at the Blank Park Zoo. The receiving...

What the Hell Do We Do Now? A Policy Options Analysis of State, Local, and Tribal Law Enforcement Participation in Immigration Enforcement

DTIC Science & Technology

2013-09-01

less like adversaries and more like partners with the affected communities in the effort. 94 THIS PAGE INTENTIONALLY LEFT BLANK 95 LIST OF... INTENTIONALLY LEFT BLANK i REPORT DOCUMENTATION PAGE Form Approved OMB No. 0704–0188 Public reporting burden for this collection of information is...ABSTRACT UU NSN 7540–01–280–5500 Standard Form 298 (Rev. 2–89) Prescribed by ANSI Std. 239–18 ii THIS PAGE INTENTIONALLY LEFT BLANK iii Approved

Super-Resolution Algorithm in Cumulative Virtual Blanking

NASA Astrophysics Data System (ADS)

Montillet, J. P.; Meng, X.; Roberts, G. W.; Woolfson, M. S.

2008-11-01

The proliferation of mobile devices and the emergence of wireless location-based services have generated consumer demand for precise location. In this paper, the MUSIC super-resolution algorithm is applied to time delay estimation for positioning purposes in cellular networks. The goal is to position a Mobile Station with UMTS technology. The problem of Base-Stations herability is solved using Cumulative Virtual Blanking. A simple simulator is presented using DS-SS signal. The results show that MUSIC algorithm improves the time delay estimation in both the cases whether or not Cumulative Virtual Blanking was carried out.

Effects of Lugol staining on stenosis formation induced by radiofrequency ablation of esophageal squamous epithelium: a study in a porcine model.

PubMed

Schölvinck, D W; Alvarez Herrero, L; Visser, M; Bergman, J J G H M; Weusten, B L A M

2015-10-01

Preliminary data show higher stricture rates after radiofrequency ablation (RFA) for early esophageal squamous neoplasia compared with Barrett's esophagus. We studied the effects of Lugol stain (LS) directly prior to RFA on stricture formation in squamous epithelium. Of 16 pigs, the distal half of the esophagus was LS, followed by circumferential RFA (single application 12 J/cm(2) ) in the unstained and stained esophagus. Pigs were euthanized at day 0 (n = 4), 3 (n = 4), or 28 (n = 8). Histology was evaluated in four areas: blank-control (no RFA, no LS), blank-RFA (no LS), LS+RFA, and LS-control (no RFA). Stenosis severity in LS+RFA and blank-RFA at 28 days was assessed by the ratio of the mucosal diameter at the RFA area to the diameter 2 cm proximal of this zone. Histology showed submucosal edema in 50% of LS+RFA versus 0% in blank-RFA. Severity and depth of inflammation (day 3) was equal in LS+RFA and blank-RFA. Severity and depth of fibrosis (day 28) appeared more severe in LS+RFA. Consequently, stenosis was present in 100% (LS+RFA) versus 12.5% (blank-RFA). The stenosis-severity ratio was 0.40 (interquartile range 0.29-0.45) in LS+RFA versus 0.73 (interquartile range 0.64-0.78) in blank-RFA (P = 0.012). Limitations of this study were the difference in uptake of LS between pigs and humans, the difference in esophageal anatomy between pigs and humans, and between the proximal and distal esophagus within pigs. In conclusion, in the porcine squamous esophagus, stenosis rate and severity after RFA increased when preceded by LS. LS may be contributing in the altered response of squamous epithelium to RFA as compared with Barrett's esophagus. © 2014 International Society for Diseases of the Esophagus.

CTEPP-OH DATA QA/QC RESULTS

EPA Science Inventory

This data set contains the method performance results for CTEPP-OH. This includes field blanks, method blanks, duplicate samples, analytical duplicates, matrix spikes, and surrogate recovery standards.

The Children’s Total Exposure to Persistent Pesticides and Other Persisten...

Fatalities caused by spherical bullets fired from blank cartridge guns in Istanbul, Turkey.

PubMed

Uzün, Ibrahim; Büyük, Yalçin; Erkol, Zerrin; Ağritmiş, Hasan; Kir, Ziya

2009-09-01

Blank cartridge guns are generally regarded as being harmless and are not considered to be firearms in the legal sense in most countries. To show the danger of these guns upon simple modifications, we report 59 fatalities resulting from these simply modified blank cartridge guns in Istanbul, Turkey. The great majority of the victims were males and the age of those ranged from 11 to 61 years. In 55.9% of these cases, homicide was the origin followed by suicide (39%). The right temporal region was detected to be the preferred region in suicidal shots by blank cartridge guns with a frequency of 56.5%. In trial shots, all these guns were detected to discharge steel or lead spherical objects, generally 4 or 5 mm in diameter, successfully. Our findings strongly suggest that these guns should also be considered as handguns in the legal sense.

Failure Analysis of a Sheet Metal Blanking Process Based on Damage Coupling Model

NASA Astrophysics Data System (ADS)

Wen, Y.; Chen, Z. H.; Zang, Y.

2013-11-01

In this paper, a blanking process of sheet metal is studied by the methods of numerical simulation and experimental observation. The effects of varying technological parameters related to the quality of products are investigated. An elastoplastic constitutive equation accounting for isotropic ductile damage is implemented into the finite element code ABAQUS with a user-defined material subroutine UMAT. The simulations of the damage evolution and ductile fracture in a sheet metal blanking process have been carried out by the FEM. In order to guarantee computation accuracy and avoid numerical divergence during large plastic deformation, a specified remeshing technique is successively applied when severe element distortion occurs. In the simulation, the evolutions of damage at different stage of the blanking process have been evaluated and the distributions of damage obtained from simulation are in proper agreement with the experimental results.

The sound insulations of studio doors. Part 1: Door blanks

NASA Astrophysics Data System (ADS)

Plumb, G. D.; Clark, R.

The sound insulations of a range of different door blanks were measured. The results were compared with the sound insulations of existing BBC door blanks. The new doors were made from medium density fiberboard (MDF) which is more stable than the blockboard used in existing studio doors. Consequently, they should require less maintenance and adjustment and should have a longer lifespan. The doors had higher sound insulations for their weight than existing designs, which might permit savings in the costs of the surrounding building structures. Overall construction costs of the door blanks themselves are likely to be similar to those of existing designs. A companion Report (BBC RD 1994/15) describes sound insulation measurements made on plant-on door seals. The intention of this work was to simplify the construction of the door frame and the fitting of the seals to reduce costs.

Advanced plasma etch technologies for nanopatterning

NASA Astrophysics Data System (ADS)

Wise, Rich

2013-10-01

Advances in patterning techniques have enabled the extension of immersion lithography from 65/45 nm through 14/10 nm device technologies. A key to this increase in patterning capability has been innovation in the subsequent dry plasma etch processing steps. Multiple exposure techniques, such as litho-etch-litho-etch, sidewall image transfer, line/cut mask, and self-aligned structures, have been implemented to solution required device scaling. Advances in dry plasma etch process control across wafer uniformity and etch selectivity to both masking materials have enabled adoption of vertical devices and thin film scaling for increased device performance at a given pitch. Plasma etch processes, such as trilayer etches, aggressive critical dimension shrink techniques, and the extension of resist trim processes, have increased the attainable device dimensions at a given imaging capability. Precise control of the plasma etch parameters affecting across-design variation, defectivity, profile stability within wafer, within lot, and across tools has been successfully implemented to provide manufacturable patterning technology solutions. IBM has addressed these patterning challenges through an integrated total patterning solutions team to provide seamless and synergistic patterning processes to device and integration internal customers. We will discuss these challenges and the innovative plasma etch solutions pioneered by IBM and our alliance partners.

Advanced plasma etch technologies for nanopatterning

NASA Astrophysics Data System (ADS)

Wise, Rich

2012-03-01

Advances in patterning techniques have enabled the extension of immersion lithography from 65/45nm through 14/10nm device technologies. A key to this increase in patterning capability has been innovation in the subsequent dry plasma etch processing steps. Multiple exposure techniques such as litho-etch-litho-etch, sidewall image transfer, line/cut mask and self-aligned structures have been implemented to solution required device scaling. Advances in dry plasma etch process control, across wafer uniformity and etch selectivity to both masking materials and have enabled adoption of vertical devices and thin film scaling for increased device performance at a given pitch. Plasma etch processes such as trilayer etches, aggressive CD shrink techniques, and the extension of resist trim processes have increased the attainable device dimensions at a given imaging capability. Precise control of the plasma etch parameters affecting across design variation, defectivity, profile stability within wafer, within lot, and across tools have been successfully implemented to provide manufacturable patterning technology solutions. IBM has addressed these patterning challenges through an integrated Total Patterning Solutions team to provide seamless and synergistic patterning processes to device and integration internal customers. This paper will discuss these challenges and the innovative plasma etch solutions pioneered by IBM and our alliance partners.

Surface structure characterization of Aspergillus fumigatus conidia mutated in the melanin synthesis pathway and their human cellular immune response.

PubMed

Bayry, Jagadeesh; Beaussart, Audrey; Dufrêne, Yves F; Sharma, Meenu; Bansal, Kushagra; Kniemeyer, Olaf; Aimanianda, Vishukumar; Brakhage, Axel A; Kaveri, Srini V; Kwon-Chung, Kyung J; Latgé, Jean-Paul; Beauvais, Anne

2014-08-01

In Aspergillus fumigatus, the conidial surface contains dihydroxynaphthalene (DHN)-melanin. Six-clustered gene products have been identified that mediate sequential catalysis of DHN-melanin biosynthesis. Melanin thus produced is known to be a virulence factor, protecting the fungus from the host defense mechanisms. In the present study, individual deletion of the genes involved in the initial three steps of melanin biosynthesis resulted in an altered conidial surface with masked surface rodlet layer, leaky cell wall allowing the deposition of proteins on the cell surface and exposing the otherwise-masked cell wall polysaccharides at the surface. Melanin as such was immunologically inert; however, deletion mutant conidia with modified surfaces could activate human dendritic cells and the subsequent cytokine production in contrast to the wild-type conidia. Cell surface defects were rectified in the conidia mutated in downstream melanin biosynthetic pathway, and maximum immune inertness was observed upon synthesis of vermelone onward. These observations suggest that although melanin as such is an immunologically inert material, it confers virulence by facilitating proper formation of the A. fumigatus conidial surface. Copyright © 2014, American Society for Microbiology. All Rights Reserved.

preparation of microgram samples on iron wool for radiocarbon analysis via accelerator mass spectrometry: A closed-system approach

NASA Astrophysics Data System (ADS)

Verkouteren, R. Michael; Klouda, George A.; Currie, Lloyd A.; Donahue, Douglas J.; Jull, A. J. Timothy; Linick, T. W.

1987-11-01

A technique has been developed at NBS for the production of high quality targets for radiocarbon analysis by accelerator mass spectrometry (AMS). Our process optimizes chemical yields, ion currents and characterizes the chemical blank. The approach encompasses sample combustion to CO 2, catalytic reduction of CO 2 by Zn to CO, reduction to graphitic carbon on high-purity iron wool and in situ formation of a homogeneous iron-carbon bead; all steps are performed in a closed system. The total measurement system blank and variability are considered in the light of contributions from combustion, iron wool, reduction, bead formation and instrument blank. Additionally, use of this approach provides an increase in throughput, i.e. the effective management of large numbers of samples. Chemical yields for 50-800 μg C samples deposited on 15 mg iron wool were greater than 90%. Integrated 12C - ion currents observed were significant, being 4-64% of those observed in pure graphite. These currents are about an order of magnitude greater than those expected from dilution of graphite with an inert substrate. Isotopic accuracy, precision and blank were assessed by measuring the {14C }/{13C } ratios of a series of targets prepared from dead carbon and oxalic acid (SRM 4990C). Each target was typically measured for one hour; bead consumption was estimated at 5% to 10%. System blank subsequent to combustion was equivalent to (2.2 ± 0.5) μg modern carbon (chemistry + instrument); combustion blank currently stands at (0.4 ± 0.1) (SE, n = 6) μg C.

ZERODUR 4-m blank surviving up to 20 g acceleration

NASA Astrophysics Data System (ADS)

Westerhoff, Thomas; Werner, Thomas; Gehindy, Thorsten

2017-09-01

The glass ceramic ZERODUR developed as astronomical telescope mirror substrate material has been widely used in many telescopes due to its excellent small coefficient of thermal expansion. Many large and medium sized mirror substrate blanks have been delivered in the almost 50 years of ZERODUR business so far. Packaging and transportation of mirror substrates of 4 to 8 m in diameter with a weight between 3 and 20 tons requires special attention and sophisticated skills to successful deliver the blanks to their destination at polishing shops all over the world. Typically, a combination of road and sea transport needs to be organized. The requirements on the transport container are depending on the transport route and may vary from destination to destination. In any case the container needs to be able to sufficiently support the multi ton ZERODUR blank to avoid breaking under gravity. Additionally, the configuration needs to be able to absorb shocks happening during transport and loading between truck trailer and ship. For insurance reasons the transport container is always equipped with a GPS trackable shock recorder allowing to download the recorded accelerations on the container and the blank throughout the entire journey. This paper reports on the event of a 4 m class ZERODUR blank exposed to shocks up to 20 g during transport. The event will be discussed in detail together with lessons learned to avoid such events for future transports. Additionally, the 20 g acceleration will be discussed in respect to the data on bending strength for ZERODUR ground surfaces reported in numerous papers by Peter Hartmann et.al. in the last couple of years.

2. D Street facade and rear (east) blank wall of ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

2. D Street facade and rear (east) blank wall of parking garage. Farther east is 408 8th Street (National Art And Frame Company). - PMI Parking Garage, 403-407 Ninth Street, Northwest, Washington, District of Columbia, DC

Four-dimensional distribution of the 2010 Eyjafjallajökull volcanic cloud over Europe observed by EARLINET

NASA Astrophysics Data System (ADS)

Pappalardo, G.; Mona, L.; D'Amico, G.; Wandinger, U.; Adam, M.; Amodeo, A.; Ansmann, A.; Apituley, A.; Alados Arboledas, L.; Balis, D.; Boselli, A.; Bravo-Aranda, J. A.; Chaikovsky, A.; Comeron, A.; Cuesta, J.; De Tomasi, F.; Freudenthaler, V.; Gausa, M.; Giannakaki, E.; Giehl, H.; Giunta, A.; Grigorov, I.; Groß, S.; Haeffelin, M.; Hiebsch, A.; Iarlori, M.; Lange, D.; Linné, H.; Madonna, F.; Mattis, I.; Mamouri, R.-E.; McAuliffe, M. A. P.; Mitev, V.; Molero, F.; Navas-Guzman, F.; Nicolae, D.; Papayannis, A.; Perrone, M. R.; Pietras, C.; Pietruczuk, A.; Pisani, G.; Preißler, J.; Pujadas, M.; Rizi, V.; Ruth, A. A.; Schmidt, J.; Schnell, F.; Seifert, P.; Serikov, I.; Sicard, M.; Simeonov, V.; Spinelli, N.; Stebel, K.; Tesche, M.; Trickl, T.; Wang, X.; Wagner, F.; Wiegner, M.; Wilson, K. M.

2013-04-01

The eruption of the Icelandic volcano Eyjafjallajökull in April-May 2010 represents a "natural experiment" to study the impact of volcanic emissions on a continental scale. For the first time, quantitative data about the presence, altitude, and layering of the volcanic cloud, in conjunction with optical information, are available for most parts of Europe derived from the observations by the European Aerosol Research Lidar NETwork (EARLINET). Based on multi-wavelength Raman lidar systems, EARLINET is the only instrument worldwide that is able to provide dense time series of high-quality optical data to be used for aerosol typing and for the retrieval of particle microphysical properties as a function of altitude. In this work we show the four-dimensional (4-D) distribution of the Eyjafjallajökull volcanic cloud in the troposphere over Europe as observed by EARLINET during the entire volcanic event (15 April-26 May 2010). All optical properties directly measured (backscatter, extinction, and particle linear depolarization ratio) are stored in the EARLINET database available at http://www.earlinet.org. A specific relational database providing the volcanic mask over Europe, realized ad hoc for this specific event, has been developed and is available on request at http://www.earlinet.org. During the first days after the eruption, volcanic particles were detected over Central Europe within a wide range of altitudes, from the upper troposphere down to the local planetary boundary layer (PBL). After 19 April 2010, volcanic particles were detected over southern and south-eastern Europe. During the first half of May (5-15 May), material emitted by the Eyjafjallajökull volcano was detected over Spain and Portugal and then over the Mediterranean and the Balkans. The last observations of the event were recorded until 25 May in Central Europe and in the Eastern Mediterranean area. The 4-D distribution of volcanic aerosol layering and optical properties on European scale reported here provides an unprecedented data set for evaluating satellite data and aerosol dispersion models for this kind of volcanic events.

77 FR 6584 - Specialty Bar Products Company,a Subsidiary of Doncasters, Inc., Blairsville, PA; Notice of...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-02-08

... gun blanks. The initial investigation resulted in a negative determination based on the findings that the subject firm did not shift the production of pins, bushings, gun blanks (or like or directly...

Modeling of the minimum variable blank holder force based on forming limit diagram (FLD) in deep drawing process

NASA Astrophysics Data System (ADS)

Candra, S.; Batan, I. M. L.; Berata, W.; Pramono, A. S.

2017-11-01

This paper presents the mathematical approach of minimum blank holder force to prevent wrinkling in deep drawing process of the cylindrical cup. Based on the maximum of minor-major strain ratio, the slab method was applied to determine the modeling of minimum variable blank holder force (VBHF) and it compared to FE simulation. The Tin steel sheet of T4-CA grade, with the thickness of 0.2 mm was used in this study. The modeling of minimum VBHF can be used as a simple reference to prevent wrinkling in deep drawing.

Numerical investigation of effects on blanks for press hardening process during longitudinal flux heating

NASA Astrophysics Data System (ADS)

Dietrich, André; Nacke, Bernard

2018-05-01

With the induction heating technology, it is possible to heat up blanks for the press hardening process in 20 s or less. Furthermore, the dimension of an induction system is small and easy to control in comparison to conventional heating systems. To bring the induction heating technology to warm forming industry it is necessary to analyze the process under the view of induction. This paper investigates the edge- and end-effects of a batch heated blank. The results facilitate the later design of induction heating systems for the batch process.

Closed-Loop Control of Myoelectric Prostheses With Electrotactile Feedback: Influence of Stimulation Artifact and Blanking.

PubMed

Hartmann, Cornelia; Dosen, Strahinja; Amsuess, Sebastian; Farina, Dario

2015-09-01

Electrocutaneous stimulation is a promising approach to provide sensory feedback to amputees, and thus close the loop in upper limb prosthetic systems. However, the stimulation introduces artifacts in the recorded electromyographic (EMG) signals, which may be detrimental for the control of myoelectric prostheses. In this study, artifact blanking with three data segmentation approaches was investigated as a simple method to restore the performance of pattern recognition in prosthesis control (eight motions) when EMG signals are corrupted by stimulation artifacts. The methods were tested over a range of stimulation conditions and using four feature sets, comprising both time and frequency domain features. The results demonstrated that when stimulation artifacts were present, the classification performance improved with blanking in all tested conditions. In some cases, the classification performance with blanking was at the level of the benchmark (artifact-free data). The greatest pulse duration and frequency that allowed a full performance recovery were 400 μs and 150 Hz, respectively. These results show that artifact blanking can be used as a practical solution to eliminate the negative influence of the stimulation artifact on EMG pattern classification in a broad range of conditions, thus allowing to close the loop in myoelectric prostheses using electrotactile feedback.

Evaluation of the memory effect on gold-coated silica adsorption tubes used for the analysis of gaseous mercury by cold vapor atomic absorption spectrometry.

PubMed

Rahman, Mohammad Mahmudur; Brown, Richard J C; Kim, Ki-Hyun; Yoon, Hye-On; Phan, Nhu-Thuc

2013-01-01

In an effort to reduce the experimental bias involved in the analysis of gaseous elemental mercury (Hg(o)), the blank response from gold-coated adsorption tubes has been investigated using cold vapor atomic absorption spectrometry (CVAAS). Our study has been compared with our recent investigation on memory effect in a cold vapour atomic fluorescence spectrometry (CVAFS). The pattern of blank responses was quantified after loading different amounts of mercury and after different time intervals of 1, 14, and 45 days. In case of the one day interval, the result of five to six instant blank heating cycles confirmed successful liberation of mercury following the second and third blank heating cycles. The results of 14 or 45 days generally suggest that liberation of excess mercury is affected by both the initial loading amount and the length of storage time prior to analysis. We have demonstrated a possibly effective way to reduce memory effects. Some similarities of these results with those from CVAFS experiment suggests that the blank response is caused by a combination of mercury absorbed within the bulk gold and micro- and nanoparticles liberated during heating and not from coabsorbing interfering gaseous species.

Evaluation of the Memory Effect on Gold-Coated Silica Adsorption Tubes Used for the Analysis of Gaseous Mercury by Cold Vapor Atomic Absorption Spectrometry

PubMed Central

Rahman, Mohammad Mahmudur; Brown, Richard J. C.; Yoon, Hye-On; Phan, Nhu-Thuc

2013-01-01

In an effort to reduce the experimental bias involved in the analysis of gaseous elemental mercury (Hgo), the blank response from gold-coated adsorption tubes has been investigated using cold vapor atomic absorption spectrometry (CVAAS). Our study has been compared with our recent investigation on memory effect in a cold vapour atomic fluorescence spectrometry (CVAFS). The pattern of blank responses was quantified after loading different amounts of mercury and after different time intervals of 1, 14, and 45 days. In case of the one day interval, the result of five to six instant blank heating cycles confirmed successful liberation of mercury following the second and third blank heating cycles. The results of 14 or 45 days generally suggest that liberation of excess mercury is affected by both the initial loading amount and the length of storage time prior to analysis. We have demonstrated a possibly effective way to reduce memory effects. Some similarities of these results with those from CVAFS experiment suggests that the blank response is caused by a combination of mercury absorbed within the bulk gold and micro- and nanoparticles liberated during heating and not from coabsorbing interfering gaseous species. PMID:23589708

Influence of prepreg characteristics on stamp consolidation

NASA Astrophysics Data System (ADS)

Slange, T. K.; Warnet, L. L.; Grouve, W. J. B.; Akkerman, R.

2017-10-01

Stamp forming is a rapid manufacturing technology used to shape flat blanks of thermoplastic composite material into three-dimensional components. The development of automated lay-up technologies further extends the applicability of stamp forming by allowing rapid lay-up of tailored blanks and partial preconsolidation. This partial preconsolidation makes the influence of prepreg more critical compared to conventional preconsolidation methods which provide full preconsolidation. This paper aims to highlight consolidation challenges that can appear when stamp forming blanks manufactured by automated lay-up. Important prepreg characteristics were identified based on an experimental study where a comparison was made between various prepreg in their as-received, deconsolidated and stamp consolidated state. It was found that adding up small thickness variations across the width of a prepreg when stacking plies into a blank by automated lay-up can cause non-uniform consolidation. Additionally, deconsolidation of the prepreg does not seem to obstruct interlaminar bonding, while intralaminar voids initially present in a prepreg cannot be removed during stamp forming. An additional preconsolidation step after automated lay-up seems necessary to remove blank thickness variations and intralaminar voids for the current prepregs. Eliminating this process step and the successful combination of rapid automated lay-up and stamp forming requires prepregs which are void-free and have less thickness variation.

Development of Methods and Equipment for Sheet Stamping

NASA Astrophysics Data System (ADS)

Botashev, A. Yu; Bisilov, N. U.; Malsugenov, R. S.

2018-03-01

New methods of sheet stamping were developed: the gas forming with double-sided heating of a blank part and the gas molding with backpressure. In case of the first method the blank part is heated to the set temperature by means of a double-sided impact of combustion products of gas mixtures, after which, under the influence of gas pressure a stamping process is performed. In case of gas molding with backpressure, the blank part is heated to the set temperature by one-sided impact of the combustion products, while backpressure is created on the opposite side of the blank part by compressed air. In both methods the deformation takes place in the temperature range of warm or hot treatment due to the heating of a blank part. This allows one to form parts of complicated shape within one technological operation, which significantly reduces the cost of production. To implement these methods, original devices were designed and produced, which are new types of forging and stamping equipment. Using these devices, an experimental research on the stamping process was carried out and high-quality parts were obtained, which makes it possible to recommend the developed methods of stamping in the industrial production. Their application in small-scale production will allow one to reduce the cost price of stamped parts 2 or 3 times.

Weighted least-square approach for simultaneous measurement of multiple reflective surfaces

NASA Astrophysics Data System (ADS)

Tang, Shouhong; Bills, Richard E.; Freischlad, Klaus

2007-09-01

Phase shifting interferometry (PSI) is a highly accurate method for measuring the nanometer-scale relative surface height of a semi-reflective test surface. PSI is effectively used in conjunction with Fizeau interferometers for optical testing, hard disk inspection, and semiconductor wafer flatness. However, commonly-used PSI algorithms are unable to produce an accurate phase measurement if more than one reflective surface is present in the Fizeau interferometer test cavity. Examples of test parts that fall into this category include lithography mask blanks and their protective pellicles, and plane parallel optical beam splitters. The plane parallel surfaces of these parts generate multiple interferograms that are superimposed in the recording plane of the Fizeau interferometer. When using wavelength shifting in PSI the phase shifting speed of each interferogram is proportional to the optical path difference (OPD) between the two reflective surfaces. The proposed method is able to differentiate each underlying interferogram from each other in an optimal manner. In this paper, we present a method for simultaneously measuring the multiple test surfaces of all underlying interferograms from these superimposed interferograms through the use of a weighted least-square fitting technique. The theoretical analysis of weighted least-square technique and the measurement results will be described in this paper.

Effects of Post-Weld Heat Treatment on the Mechanical Properties of Similar- and Dissimilar-Alloy Friction Stir Welded Blanks

NASA Astrophysics Data System (ADS)

Zadpoor, Amir Abbas; Sinke, Jos

2011-01-01

Friction stir welding is a solid state joining process with relatively low welding temperatures. Nevertheless, the mechanical properties of friction stir welded blanks are degraded after welding. Indeed, both strength and ductility of the welds are decreased after welding. Often, the resulting friction stir welded blanks need to be formed to their final structural shape. Therefore, the formability of friction stir welded blanks is of primary importance in the manufacturing of structural parts. This paper studies how the mechanical properties and particularly formability of friction stir welded blanks can be improved by applying a post weld heat treatment. Two aluminum alloys from 2000 and 7000 series, namely 2024-T3 and 7075-T6, are selected for the study. The sheet thickness of both materials is 2,0 mm. The selected alloys are welded in three configurations: 2024-T3 and 2024-T3, 7075-T6 and 7075-T6, and 2024-T3 and 7075-T6. The resulting welds are naturally aged for a few months. Three sets of standard dog bone shape tensile test specimens are then machined from the welds. The first set of the specimens is tested without any heat treatment. The second set of the specimens is solution heat treated and quenched before testing. The third set of the specimens is solution heat treated, quenched, and naturally aged for a week before testing. The mechanical properties of the three different sets of specimens are compared with each other. It is shown that careful selection of post weld heat-treatment can greatly improve the formability of friction stir welded blanks.

Setup of a Parameterized FE Model for the Die Roll Prediction in Fine Blanking using Artificial Neural Networks

NASA Astrophysics Data System (ADS)

Stanke, J.; Trauth, D.; Feuerhack, A.; Klocke, F.

2017-09-01

Die roll is a morphological feature of fine blanked sheared edges. The die roll reduces the functional part of the sheared edge. To compensate for the die roll thicker sheet metal strips and secondary machining must be used. However, in order to avoid this, the influence of various fine blanking process parameters on the die roll has been experimentally and numerically studied, but there is still a lack of knowledge on the effects of some factors and especially factor interactions on the die roll. Recent changes in the field of artificial intelligence motivate the hybrid use of the finite element method and artificial neural networks to account for these non-considered parameters. Therefore, a set of simulations using a validated finite element model of fine blanking is firstly used to train an artificial neural network. Then the artificial neural network is trained with thousands of experimental trials. Thus, the objective of this contribution is to develop an artificial neural network that reliably predicts the die roll. Therefore, in this contribution, the setup of a fully parameterized 2D FE model is presented that will be used for batch training of an artificial neural network. The FE model enables an automatic variation of the edge radii of blank punch and die plate, the counter and blank holder force, the sheet metal thickness and part diameter, V-ring height and position, cutting velocity as well as material parameters covered by the Hensel-Spittel model for 16MnCr5 (1.7131, AISI/SAE 5115). The FE model is validated using experimental trails. The results of this contribution is a FE model suitable to perform 9.623 simulations and to pass the simulated die roll width and height automatically to an artificial neural network.

Effects of process variation in short cycle stretch forming in beverage can production

NASA Astrophysics Data System (ADS)

Schneider, Matthias; Liewald, Mathias

2016-10-01

Short Cycle Stretch Forming (SCS) is an innovative stretch forming technology developed at the Institute for Metal Forming Technology (IFU) at the University of Stuttgart. The SCS technology combines plane pre-stretching and deep drawing operations within the same stroke of press ram. Material is yielding from the inner to the outer part of the sheet. The sheet thickness is reduced and denting resistance and yield stress are increased due to hardening effects. SCS-Technology is enhanced due to rotational-symmetrical bodies by applying this technology to a cupping process in tinplate can production. A process simulation for SCS-Cupping processes was conducted. Based on these results a tool was manufactured and commissioned. Experimental results showed that material yields from the middle of the blank to the outer area of the cup wall. Due to the volume of material, the initial diameter can be reduced and material costs can be saved. In this paper different process settings and their effect on the amount of material, which yielded from the middle of the blank to its outside, are observed in a number of experimental series. A blank holder is added to the process in order to avoid wrinkling. The influence of this additional blank holder is therefore investigated in a first experimental set-up by varying blank holder force. In a further investigation the effects of two materials with different thicknesses is observed. Finally, an experimental series is conducted to observe the effect of blank diameter on the SCS-Cupping process. The results of this paper show that SCS-Cupping offers a promising potential for material savings and outline main effects for this technology.

Some case studies of skewed (and other ab-normal) data distributions arising in low-level environmental research.

PubMed

Currie, L A

2001-07-01

Three general classes of skewed data distributions have been encountered in research on background radiation, chemical and radiochemical blanks, and low levels of 85Kr and 14C in the atmosphere and the cryosphere. The first class of skewed data can be considered to be theoretically, or fundamentally skewed. It is typified by the exponential distribution of inter-arrival times for nuclear counting events for a Poisson process. As part of a study of the nature of low-level (anti-coincidence) Geiger-Muller counter background radiation, tests were performed on the Poisson distribution of counts, the uniform distribution of arrival times, and the exponential distribution of inter-arrival times. The real laboratory system, of course, failed the (inter-arrival time) test--for very interesting reasons, linked to the physics of the measurement process. The second, computationally skewed, class relates to skewness induced by non-linear transformations. It is illustrated by non-linear concentration estimates from inverse calibration, and bivariate blank corrections for low-level 14C-12C aerosol data that led to highly asymmetric uncertainty intervals for the biomass carbon contribution to urban "soot". The third, environmentally, skewed, data class relates to a universal problem for the detection of excursions above blank or baseline levels: namely, the widespread occurrence of ab-normal distributions of environmental and laboratory blanks. This is illustrated by the search for fundamental factors that lurk behind skewed frequency distributions of sulfur laboratory blanks and 85Kr environmental baselines, and the application of robust statistical procedures for reliable detection decisions in the face of skewed isotopic carbon procedural blanks with few degrees of freedom.

Spatial and temporal genetic structure of a river-resident Atlantic salmon (Salmo salar) after millennia of isolation

PubMed Central

Sandlund, Odd Terje; Karlsson, Sten; Thorstad, Eva B; Berg, Ole Kristian; Kent, Matthew P; Norum, Ine C J; Hindar, Kjetil

2014-01-01

The river-resident Salmo salar (“småblank”) has been isolated from other Atlantic salmon populations for 9,500 years in upper River Namsen, Norway. This is the only European Atlantic salmon population accomplishing its entire life cycle in a river. Hydropower development during the last six decades has introduced movement barriers and changed more than 50% of the river habitat to lentic conditions. Based on microsatellites and SNPs, genetic variation within småblank was only about 50% of that in the anadromous Atlantic salmon within the same river. The genetic differentiation (FST) between småblank and the anadromous population was 0.24. This is similar to the differentiation between anadromous Atlantic salmon in Europe and North America. Microsatellite analyses identified three genetic subpopulations within småblank, each with an effective population size Ne of a few hundred individuals. There was no evidence of reduced heterozygosity and allelic richness in contemporary samples (2005–2008) compared with historical samples (1955–56 and 1978–79). However, there was a reduction in genetic differentiation between sampling localities over time. SNP data supported the differentiation of småblank into subpopulations and revealed downstream asymmetric gene flow between subpopulations. In spite of this, genetic variation was not higher in the lower than in the upper areas. The meta-population structure of småblank probably maintains genetic variation better than one panmictic population would do, as long as gene flow among subpopulations is maintained. Småblank is a unique endemic island population of Atlantic salmon. It is in a precarious situation due to a variety of anthropogenic impacts on its restricted habitat area. Thus, maintaining population size and avoiding further habitat fragmentation are important. PMID:24967074

Anomalous origin of the left coronary artery from the pulmonary artery with patent ductus arteriosus: a must to recognize entity.

PubMed

Awasthy, Neeraj; Marwah, Ashutosh; Sharma, Rajesh; Dalvi, Bharat

2010-09-01

Anomalous left coronary artery from the pulmonary trunk (ALCAPA) presents in early infancy with a clinical picture of congestive heart failure with left ventricular (LV) dysfunction and mitral insufficiency. These manifestations of myocardial ischaemia may be masked in the presence of an associated patent ductus arteriosus (PDA) or ventricular septal defect (VSD) which prevents the fall of pulmonary artery pressures and allows perfusion of the anomalous coronary artery. We present a case of a patient with large PDA-associated ALCAPA and preserved LV function. The importance of such a finding lies in the fact that VSD closure or PDA ligation in such cases would unmask the ALCAPA.

Results from prototype die-to-database reticle inspection system

NASA Astrophysics Data System (ADS)

Mu, Bo; Dayal, Aditya; Broadbent, Bill; Lim, Phillip; Goonesekera, Arosha; Chen, Chunlin; Yeung, Kevin; Pinto, Becky

2009-03-01

A prototype die-to-database high-resolution reticle defect inspection system has been developed for 32nm and below logic reticles, and 4X Half Pitch (HP) production and 3X HP development memory reticles. These nodes will use predominantly 193nm immersion lithography (with some layers double patterned), although EUV may also be used. Many different reticle types may be used for these generations including: binary (COG, EAPSM), simple tritone, complex tritone, high transmission, dark field alternating (APSM), mask enhancer, CPL, and EUV. Finally, aggressive model based OPC is typically used, which includes many small structures such as jogs, serifs, and SRAF (sub-resolution assist features), accompanied by very small gaps between adjacent structures. The architecture and performance of the prototype inspection system is described. This system is designed to inspect the aforementioned reticle types in die-todatabase mode. Die-to-database inspection results are shown on standard programmed defect test reticles, as well as advanced 32nm logic, and 4X HP and 3X HP memory reticles from industry sources. Direct comparisons with currentgeneration inspection systems show measurable sensitivity improvement and a reduction in false detections.

Quo Vadis, Medical Genetics?

NASA Astrophysics Data System (ADS)

Czeizel, Andrew E.

The beginning of human genetics and its medical part: medical genetics was promising in the early decades of this century. Many genetic diseases and defects with Mendelian origin were identified and it helped families with significant genetic burden to limit their child number. Unfortunately this good start was shadowed by two tragic events. On the one hand, in the 1930s and early 1940s the German fascism brought about the dominance of an unscientific eugenics to mask vile political crimes. People with genetic diseases-defects were forced to sterilisation and several of them were killed. On the other hand, in the 1950s lysenkoism inhibitied the evolution of genetics in the Soviet Union and their satelite countries. Lysenko's doctrine declared genetics as a product of imperialism and a guilty science, therefore leading geneticists were ousted form their posts and some of them were executed or put in prison. Past decades genetics has resulted fantastic new results and achieved a leading position within the natural sciences. To my mind, however, the expected wider use of new eugenics indicates a new tragedy and this Cassandra's prediction is the topic of this presentation.

Enhanced periodontal regeneration using collagen, stem cells or growth factors.

PubMed

Basan, Tanja; Welly, Daniel; Kriebel, Katja; Scholz, Malte; Brosemann, Anne; Liese, Jan; Vollmar, Brigitte; Frerich, Bernhard; Lang, Hermann

2017-01-01

The regeneration of periodontal tissues still remains a challenge in periodontology. The aim of the present study was to examine the regenerative potential of a) different collagen support versus blank, b) different collagen support +/- a growth factor cocktail (GF) and c) a collagen powder versus collagen powder + periodontal ligament stem cells (PDLSCs) comparatively in a large animal model. The stem cells (SC) were isolated from extracted teeth of 15 adult miniature pigs. A total of 60 class II furcation defects were treated with the materials named above. Concluding, a histological evaluation followed. A significant increase in regeneration was observed in all treatment groups. The new attachment formation reached a maximum of 77 percent. In the control group a new attachment formation of 13 percent was observed. The study shows that all implanted materials improved periodontal regeneration, though there were no significant differences between the experimental groups. Within the limitations of this study, it can be assumed that the lack of significant differences is due to the complexity of the clinical setting.

Adjustable extender for instrument module

DOEpatents

Sevec, J.B.; Stein, A.D.

1975-11-01

A blank extender module used to mount an instrument module in front of its console for repair or test purposes has been equipped with a rotatable mount and means for locking the mount at various angles of rotation for easy accessibility. The rotatable mount includes a horizontal conduit supported by bearings within the blank module. The conduit is spring-biased in a retracted position within the blank module and in this position a small gear mounted on the conduit periphery is locked by a fixed pawl. The conduit and instrument mount can be pulled into an extended position with the gear clearing the pawl to permit rotation and adjustment of the instrument.

Method for making devices having intermetallic structures and intermetallic devices made thereby

DOEpatents

Paul, Brian Kevin; Wilson, Richard Dean; Alman, David Eli

2004-01-06

A method and system for making a monolithic intermetallic structure are presented. The structure is made from lamina blanks which comprise multiple layers of metals which are patternable, or intermetallic lamina blanks that are patternable. Lamina blanks are patterned, stacked and registered, and processed to form a monolithic intermetallic structure. The advantages of a patterned monolithic intermetallic structure include physical characteristics such as melting temperature, thermal conductivity, and corrosion resistance. Applications are broad, and include among others, use as a microreactor, heat recycling device, and apparatus for producing superheated steam. Monolithic intermetallic structures may contain one or more catalysts within the internal features.

Mercury Deposition Network Site Operator Training for the System Blank and Blind Audit Programs

USGS Publications Warehouse

Wetherbee, Gregory A.; Lehmann, Christopher M.B.

2008-01-01

The U.S. Geological Survey operates the external quality assurance project for the National Atmospheric Deposition Program/Mercury Deposition Network. The project includes the system blank and blind audit programs for assessment of total mercury concentration data quality for wet-deposition samples. This presentation was prepared to train new site operators and to refresh experienced site operators to successfully process and submit system blank and blind audit samples for chemical analysis. Analytical results are used to estimate chemical stability and contamination levels of National Atmospheric Deposition Program/Mercury Deposition Network samples and to evaluate laboratory variability and bias.

Defect reduction in overgrown semi-polar (11-22) GaN on a regularly arrayed micro-rod array template

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Y.; Bai, J.; Hou, Y.

2016-02-15

We demonstrate a great improvement in the crystal quality of our semi-polar (11-22) GaN overgrown on regularly arrayed micro-rod templates fabricated using a combination of industry-matched photolithography and dry-etching techniques. As a result of our micro-rod configuration specially designed, an intrinsic issue on the anisotropic growth rate which is a great challenge in conventional overgrowth technique for semi-polar GaN has been resolved. Transmission electron microscopy measurements show a different mechanism of defect reduction from conventional overgrowth techniques and also demonstrate major advantages of our approach. The dislocations existing in the GaN micro-rods are effectively blocked by both a SiO{sub 2}more » mask on the top of each GaN micro-rod and lateral growth along the c-direction, where the growth rate along the c-direction is faster than that along any other direction. Basal stacking faults (BSFs) are also effectively impeded, leading to a distribution of BSF-free regions periodically spaced by BSF regions along the [-1-123] direction, in which high and low BSF density areas further show a periodic distribution along the [1-100] direction. Furthermore, a defect reduction model is proposed for further improvement in the crystalline quality of overgrown (11-22) GaN on sapphire.« less

Qualification of local advanced cryogenic cleaning technology for 14nm photomask fabrication

NASA Astrophysics Data System (ADS)

Taumer, Ralf; Krome, Thorsten; Bowers, Chuck; Varghese, Ivin; Hopkins, Tyler; White, Roy; Brunner, Martin; Yi, Daniel

2014-10-01

The march toward tighter design rules, and thus smaller defects, implies stronger surface adhesion between defects and the photomask surface compared to past generations, thereby resulting in increased difficulty in photomask cleaning. Current state-of-the-art wet clean technologies utilize functional water and various energies in an attempt to produce similar yield to the acid cleans of previous generations, but without some of the negative side effects. Still, wet cleans have continued to be plagued with issues such as persistent particles and contaminations, SRAF and feature damages, leaving contaminants behind that accelerate photo-induced defect growth, and others. This paper details work done through a design of experiments (DOE) utilized to qualify an improved cryogenic cleaning technology for production in the Advanced Mask Technology Center (AMTC) advanced production lines for 20 and 14 nm processing. All work was conducted at the AMTC facility in Dresden, Germany utilizing technology developed by Eco-Snow Systems and RAVE LLC for their cryogenic local cleaning VC1200F platform. This system uses a newly designed nozzle, improved gaseous CO2 delivery, extensive filtration to remove hydrocarbons and minimize particle adders, and other process improvements to overcome the limitations of the previous generation local cleaning tool. AMTC has successfully qualified this cryogenic cleaning technology and is currently using it regularly to enhance production yields even at the most challenging technology nodes.

Development and Piloting of the Prosocial Attitude Blank.

ERIC Educational Resources Information Center

Wasson, Rebecca; And Others

The Prosocial Attitude Blank (PAB) was designed to assess interpersonal values and ethical awareness of elementary school children. PAB was administered to 405 elementary students as one component of the evaluation of an intervention program designed to reduce interpersonal conflicts, increase literacy skills, and enhance children's ethical…

Social Impacts Module (SIM) Transition

DTIC Science & Technology

2012-09-28

User String The authorized user’s name to access the PAVE database. Applies only to Microsoft SQL Server; leave blank, otherwise. passwd String The...otherwise. passwd String The password if an authorized user’s name is required; otherwise, leave blank driver String The class name for the driver to

Lowest cost due to highest productivity and highest quality

NASA Astrophysics Data System (ADS)

Wenk, Daniel

2003-03-01

Since global purchasing in the automotive industry has been taken up all around the world there is one main key factor that makes a TB-supplier today successful: Producing highest quality at lowest cost. The fact that Tailored Blanks, which today may reach up to 1/3 of a car body weight, are purchased on the free market but from different steel suppliers, especially in Europe and NAFTA, the philosophy on OEM side has been changing gradually towards tough evaluation criteria. "No risk at the stamping side" calls for top quality Tailored- or Tubular Blank products. Outsourcing Tailored Blanks has been starting in Japan but up to now without any quality request from the OEM side like ISO 13919-1B (welding quality standard in Europe and USA). Increased competition will automatically push the quality level and the ongoing approach to combine high strength steel with Tailored- and Tubular Blanks will ask for even more reliable system concepts which enables to weld narrow seams at highest speed. Beside producing quality, which is the key to reduce one of the most important cost driver "material scrap," in-line quality systems with true and reliable evaluation is going to be a "must" on all weld systems. Traceability of all process related data submitted to interfaces according to customer request in combination with ghost-shift-operation of TB systems are tomorrow's state-of-the-art solutions of Tailored Blank-facilities.

Inverse Analysis to Formability Design in a Deep Drawing Process

NASA Astrophysics Data System (ADS)

Buranathiti, Thaweepat; Cao, Jian

Deep drawing process is an important process adding values to flat sheet metals in many industries. An important concern in the design of a deep drawing process generally is formability. This paper aims to present the connection between formability and inverse analysis (IA), which is a systematical means for determining an optimal blank configuration for a deep drawing process. In this paper, IA is presented and explored by using a commercial finite element software package. A number of numerical studies on the effect of blank configurations to the quality of a part produced by a deep drawing process were conducted and analyzed. The quality of the drawing processes is numerically analyzed by using an explicit incremental nonlinear finite element code. The minimum distance between elemental principal strains and the strain-based forming limit curve (FLC) is defined as tearing margin to be the key performance index (KPI) implying the quality of the part. The initial blank configuration has shown that it plays a highly important role in the quality of the product via the deep drawing process. In addition, it is observed that if a blank configuration is not greatly deviated from the one obtained from IA, the blank can still result a good product. The strain history around the bottom fillet of the part is also observed. The paper concludes that IA is an important part of the design methodology for deep drawing processes.

Summary and evaluation of pesticides in field blanks collected for the National Water-Quality Assessment Program, 1992-95

USGS Publications Warehouse

Martin, Jeffrey D.; Gilliom, Robert J.; Schertz, Terry L.

1999-01-01

Field blanks did show evidence of contamination by some pesticides. Most of the pesticides detected in field blanks, however, were detected more frequently and at higher concentrations in environmental water samples. Two criteria were used to evaluate the need to consider contamination in water-quality assessments: (1) a ratio of the frequency of pesticide detection in environmental water samples to the frequency of detection in field blanks of 5.0 or less and (2) a ratio of the median concentration detected in environmental water samples to the maximum concentration detected in field blanks of 2.0 or less. These criteria indicate that contamination, for the majority of the pesticide data collected for the NAWQA Program, probably does not need to be considered in the analysis and interpretation of (1) the frequency of pesticide detection or (2) the median concentration of pesticides detected. Contamination must be considered, however, in detection frequency for cispermethrin, pronamide, p,p' -DDE, pebulate, propargite, ethalfluralin, and triallate in surface water and fenuron, benfluralin, pronamide, cis-permethrin, triallate, chlorpyrifos, trifluralin, propanil, p,p' -DDE, bromacil, dacthal, diazinon, and diuron in ground water. Contamination also must be considered in median concentrations detected for pronamide, p,p' -DDE, propargite, napropamide, and triallate in surface water and benfluralin, cis-permethrin, triallate, chlorpyrifos, trifluralin, p,p' -DDE, dacthal, and diazinon in ground water.

Production of the 4.26 m ZERODUR mirror blank for the Advanced Technology Solar telescope (ATST)

NASA Astrophysics Data System (ADS)

Jedamzik, Ralf; Werner, Thomas; Westerhoff, Thomas

2014-07-01

The Daniel K. Inouye Solar Telescope (DKIST, formerly the Advanced Technology Solar Telescope, ATST) will be the most powerful solar telescope in the world. It is currently being built by the Association of Universities for Research in Astronomy (AURA) in a height of 3000 m above sea level on the mountain Haleakala of Maui, Hawaii. The primary mirror blank of diameter 4.26 m is made of the extremely low thermal expansion glass ceramic ZERODUR® of SCHOTT AG Advanced Optics. The DKIST primary mirror design is extremely challenging. With a mirror thickness of only 78 to 85 mm it is the smallest thickness ever machined on a mirror of 4.26 m in diameter. Additionally the glassy ZERODUR® casting is one of the largest in size ever produced for a 4 m class ZERODUR® mirror blank. The off axis aspherical mirror surface required sophisticated grinding procedures to achieve the specified geometrical tolerance. The small thickness of about 80 mm required special measures during processing, lifting and transport. Additionally acid etch treatment was applied to the convex back-surface and the conical shaped outer diameter surface to improve the strength of the blank. This paper reports on the challenging tasks and the achievements on the material property and dimensional specification parameter during the production of the 4.26 m ZERODUR® primary mirror blank for AURA.

Challenges in process marginality for advanced technology nodes and tackling its contributors

NASA Astrophysics Data System (ADS)

Narayana Samy, Aravind; Schiwon, Roberto; Seltmann, Rolf; Kahlenberg, Frank; Katakamsetty, Ushasree

2013-10-01

Process margin is getting critical in the present node shrinkage scenario due to the physical limits reached (Rayleigh's criterion) using ArF lithography tools. K1 is used to its best for better resolution and to enhance the process margin (28nm metal patterning k1=0.31). In this paper, we would like to give an overview of various contributors in the advanced technology nodes which limit the process margins and how the challenges have been tackled in a modern foundry model. Advanced OPC algorithms are used to make the design content at the mask optimum for patterning. However, as we work at the physical limit, critical features (Hot-spots) are very susceptible to litho process variations. Furthermore, etch can have a significant impact as well. Pattern that still looks healthy at litho can fail due to etch interactions. This makes the traditional 2D contour output from ORC tools not able to predict accurately all defects and hence not able to fully correct it in the early mask tapeout phase. The above makes a huge difference in the fast ramp-up and high yield in a competitive foundry market. We will explain in this paper how the early introduction of 3D resist model based simulation of resist profiles (resist top-loss, bottom bridging, top-rounding, etc.,) helped in our prediction and correction of hot-spots in the early 28nm process development phase. The paper also discusses about the other overall process window reduction contributors due to mask 3D effects, wafer topography (focus shifts/variations) and how this has been addressed with different simulation efforts in a fast and timely manner.

[Biological evaluation of three-dimensional printed co-poly lactic acid/glycolic acid/tri-calcium phosphate scaffold for bone reconstruction].

PubMed

Li, S Y; Zhou, M; Lai, Y X; Geng, Y M; Cao, S S; Chen, X M

2016-11-09

Objective: To biologically evaluate the three-dimensional(3D) printed co-poly lactic acid/glycolic acid/tri-calcium phosphate(PLGA/TCP) scaffold which could be used for repairing oral and maxillofacial bone defects, and to provide experimental evidence for its further research and clinical application. Methods: PLGA/TCP scaffolds were fabricated using low temperature rapid prototyping technique. Micro-CT and scanning electron microscope(SEM) were used to characterize the surface morphology. MC3T3-E1 cells were seeded onto the scaffold and stained with the rhodamine phalloidin and calcein acetomethoxy. After that, confocal laser scanning microscope was exploited to observe the features and viability of the cells. Moreover, the cells were co-cultured with the extract of PLGA/TCP and complete medium, respectively. The proliferation capability of the cells was assessed by the cell counting kit-8 (CCK-8) on the 1st, 2nd, and 3rd day. The PLGA/TCP scaffolds incorporated with recombinant human bone morphogenetic protein-2(rhBMP-2) of 0, 30, 60 μg(i.e. blank control group, low-dose group and high-dose group) were implanted into the latissimus dorsi muscle of the rats, and 6 weeks later, the samples were harvested to estimate the volume and pattern of new bone. Results: The 3D printed PLGA/TCP scaffold possessed a regular and well-defined porous stereo-structure with porosity of (73±3)%. Micro-CT and SEM showed that pore size were (379±32) and (453±29) μm respectively, and distance between layers were (452± 24) and (415±25) μm, and cylinder diameter were (342±24) and (350±28) μm. It also exhibited excellent cell adhesion and growth ability on the exterior and inner surface through rhodamine phalloidin and calcein acetomethoxy staining. The CCK-8 test demonstrated that the absorbance value of extract group on the 1st and 2nd day(0.51±0.08 and 0.63±0.09) were significantly higher than those in the blank control group(0.39± 0.05 and 0.53±0.05)( P< 0.05), while there was no significant difference between the extract group(0.67±0.06) and the blank control group(0.68±0.04)( P> 0.05) on the 3rd day. For in vivo test, there was obvious ectopic new bone formation on the PLGA/TCP scaffold incorporated with rhBMP-2, and this was demonstrated using the histological examination and micro-CT. The bone formation in the low-dose group was similar to the shape of the pre-implanted 3D printed scaffold, while much diversity was revealed in the high-dose group duo to over osteogenesis which was validated by the examinations of gross observation, histology and micro-CT. Conclusions: Customized PLGA/TCP scaffolds can be manufactured by 3D printing technique. The scaffold showed an excellent biocompatibility and ectopic osteogenesis when incorporated with rhBMP-2. However, further research is needed to validate it ' s effect on repairment of the oral and maxillofacial bone defects.

Information Operations and FATA Integration into the National Mainstream

DTIC Science & Technology

2012-09-01

Edward L. Fisher THIS PAGE INTENTIONALLY LEFT BLANK i REPORT DOCUMENTATION PAGE Form Approved OMB No. 0704-0188 Public reporting burden for this...LEFT BLANK vii TABLE OF CONTENTS I . INTRODUCTION ............................................................................................. 1...39 ix i . Computer Network Operations .................................. 40 j. CNO as an IO Core Capability .................................... 40

Nitrogen-Noble Gas Static Mass Sepectrometry of Genesis Collector Materials

NASA Astrophysics Data System (ADS)

Marty, B.; Burnard, P.; Zimmermann, L.; Robert, P.

2005-03-01

Gases (N, Ne, Ar) are extracted from Au-coated sapphire and diamond-like carbon collectors using an F2 excimer laser, without blank contributions the substrate. N is purified using a low blank CuO/Cu cycle prior to analysis by high resolution multicollector mass spectrometer.

Some Data Concerning the Vocational Preference Inventory Scales and the Strong Vocational Interest Blank

ERIC Educational Resources Information Center

Cockriel, Irvin W.

1972-01-01

Occupational scales of the Vocational Preference Inventory were correlated with the Basic Interest scales of the Strong Vocational Interest Blank. The 285 subjects were women freshmen in a College of Education. The results indicate that the scales are not highly correlated. (Author)

76 FR 50537 - Regulatory Guidance Concerning Household Goods Carriers Requiring Shippers To Sign Blank or...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-08-15

... Concerning Household Goods Carriers Requiring Shippers To Sign Blank or Incomplete Documents AGENCY: Federal.... Basis for This Notice The Agency has received numerous consumer complaints concerning household goods.... The FMCSA is issuing this regulatory guidance to eliminate any ambiguity or confusion concerning the...

U.S.-MEXICO BORDER PROGRAM ARIZONA BORDER STUDY--QA ANALYTICAL RESULTS FOR PARTICULATE MATTER IN BLANK SAMPLES

EPA Science Inventory

The Particulate Matter in Blank Samples data set contains the analytical results for measurements of two particle sizes in 12 samples. Filters were pre-weighed, loaded into impactors, kept unexposed in the laboratory, unloaded and post-weighed. Positive weight gains for laborat...

Variations in backward masking with different masking stimuli: II. The effects of spatially quantised masks in the light of local contour interaction, interchannel inhibition, perceptual retouch, and substitution theories.

PubMed

Bachmann, Talis; Luiga, Iiris; Põder, Endel

2005-01-01

In part I we showed that with spatially non-overlapping targets and masks both local metacontrast-like interactions and attentional processes are involved in backward masking. In this second part we extend the strategy of varying the contents of masks to pattern masking where targets and masks overlap in space, in order to compare different masking theories. Images of human faces were backward-masked by three types of spatially quantised masks (the same faces as targets, faces different from targets, and Gaussian noise with power spectra typical for faces). Configural characteristics, rather than the spectral content of the mask, predicted the extent of masking at relatively long stimulus onset asynchronies (SOAs). This poses difficulties for the theory of transient-on-sustained inhibition as the principal mechanism of masking and also for local contour interaction being a decisive factor in pattern masking. The scale of quantisation had no effect on the masking capacity of noise masks and a strong effect on the capacity of different-face masks. Also, the decrease of configural masking with an increase in the coarseness of the quantisation of the mask highlights ambiguities inherent in the re-entrance-based substitution theory of masking. Different masking theories cannot solve the problems of masking separately. They should be combined in order to create a complex, yet comprehensible mode of interaction for the different mechanisms involved in visual backward masking.

In HepG2 Cells, Coexisting Carnitine Deficiency Masks Important Indicators of Marginal Biotin Deficiency123

PubMed Central

Bogusiewicz, Anna; Boysen, Gunnar; Mock, Donald M

2015-01-01

Background: A large number of birth defects are related to nutrient deficiencies; concern that biotin deficiency is teratogenic in humans is reasonable. Surprisingly, studies indicate that increased urinary 3-hydroxyisovalerylcarnitine (3HIAc), a previously validated marker of biotin deficiency, is not a valid biomarker in pregnancy. Objective: In this study we hypothesized that coexisting carnitine deficiency can prevent the increase in 3HIAc due to biotin deficiency. Methods: We used a 2-factor nutrient depletion design to induce isolated and combined biotin and carnitine deficiency in HepG2 cells and then repleted cells with carnitine. To elucidate the metabolic pathogenesis, we quantitated intracellular and extracellular free carnitine, acylcarnitines, and acylcarnitine ratios using liquid chromatography–tandem mass spectrometry. Results: Relative to biotin-sufficient, carnitine-sufficient cells, intracellular acetylcarnitine increased by 90%, propionylcarnitine more than doubled, and 3HIAc increased by >10-fold in biotin-deficient, carnitine-sufficient (BDCS) cells, consistent with a defensive mechanism in which biotin-deficient cells transesterify the acyl-coenzyme A (acyl-CoA) substrates of the biotin-dependent carboxylases to the related acylcarnitines. Likewise, in BDCS cells, the ratio of acetylcarnitine to malonylcarnitine and the ratio of propionylcarnitine to methylmalonylcarnitine both more than tripled, and the ratio of 3HIAc to 3-methylglutarylcarnitine (MGc) increased by >10-fold. In biotin-deficient, carnitine-deficient (BDCD) cells, the 3 substrate-derived acylcarnitines changed little, but the substrate:product ratios were masked to a lesser extent. Moreover, carnitine repletion unmasked biotin deficiency in BDCD cells as shown by increases in acetylcarnitine, propionylcarnitine, and 3HIAc (each increased by >50-fold). Likewise, ratios of acetylcarnitine:malonylcarnitine, propionylcarnitine:methylmalonylcarnitine, and 3HIAc:MGc all increased by >8-fold. Conclusions: Our findings provide strong evidence that coexisting carnitine deficiency masks some indicators of biotin deficiency and support the potential importance of the ratios of acylcarnitines arising from the acyl-CoA substrates and products for biotin-dependent carboxylases in detecting the biotin deficiency that is masked by coexisting carnitine deficiency. PMID:25527659

In HepG2 cells, coexisting carnitine deficiency masks important indicators of marginal biotin deficiency.

PubMed

Bogusiewicz, Anna; Boysen, Gunnar; Mock, Donald M

2015-01-01

A large number of birth defects are related to nutrient deficiencies; concern that biotin deficiency is teratogenic in humans is reasonable. Surprisingly, studies indicate that increased urinary 3-hydroxyisovalerylcarnitine (3HIAc), a previously validated marker of biotin deficiency, is not a valid biomarker in pregnancy. In this study we hypothesized that coexisting carnitine deficiency can prevent the increase in 3HIAc due to biotin deficiency. We used a 2-factor nutrient depletion design to induce isolated and combined biotin and carnitine deficiency in HepG2 cells and then repleted cells with carnitine. To elucidate the metabolic pathogenesis, we quantitated intracellular and extracellular free carnitine, acylcarnitines, and acylcarnitine ratios using liquid chromatography-tandem mass spectrometry. Relative to biotin-sufficient, carnitine-sufficient cells, intracellular acetylcarnitine increased by 90%, propionylcarnitine more than doubled, and 3HIAc increased by >10-fold in biotin-deficient, carnitine-sufficient (BDCS) cells, consistent with a defensive mechanism in which biotin-deficient cells transesterify the acyl-coenzyme A (acyl-CoA) substrates of the biotin-dependent carboxylases to the related acylcarnitines. Likewise, in BDCS cells, the ratio of acetylcarnitine to malonylcarnitine and the ratio of propionylcarnitine to methylmalonylcarnitine both more than tripled, and the ratio of 3HIAc to 3-methylglutarylcarnitine (MGc) increased by >10-fold. In biotin-deficient, carnitine-deficient (BDCD) cells, the 3 substrate-derived acylcarnitines changed little, but the substrate:product ratios were masked to a lesser extent. Moreover, carnitine repletion unmasked biotin deficiency in BDCD cells as shown by increases in acetylcarnitine, propionylcarnitine, and 3HIAc (each increased by >50-fold). Likewise, ratios of acetylcarnitine:malonylcarnitine, propionylcarnitine:methylmalonylcarnitine, and 3HIAc:MGc all increased by >8-fold. Our findings provide strong evidence that coexisting carnitine deficiency masks some indicators of biotin deficiency and support the potential importance of the ratios of acylcarnitines arising from the acyl-CoA substrates and products for biotin-dependent carboxylases in detecting the biotin deficiency that is masked by coexisting carnitine deficiency. © 2015 American Society for Nutrition.

What's in a mask? Information masking with forward and backward visual masks.

PubMed

Davis, Chris; Kim, Jeesun

2011-10-01

Three experiments tested how the physical format and information content of forward and backward masks affected the extent of visual pattern masking. This involved using different types of forward and backward masks with target discrimination measured by percentage correct in the first experiment (with a fixed target duration) and by an adaptive threshold procedure in the last two. The rationale behind the manipulation of the content of the masks stemmed from masking theories emphasizing attentional and/or conceptual factors rather than visual ones. Experiment 1 used word masks and showed that masking was reduced (a masking reduction effect) when the forward and backward masks were the same word (although in different case) compared to when the masks were different words. Experiment 2 tested the extent to which a reduction in masking might occur due to the physical similarity between the forward and backward masks by comparing the effect of the same content of the masks in the same versus different case. The result showed a significant reduction in masking for same content masks but no significant effect of case. The last experiment examined whether the reduction in masking effect would be observed with nonword masks--that is, having no high-level representation. No reduction in masking was found from same compared to different nonword masks (Experiment 3). These results support the view that the conscious perception of a rapidly displayed target stimulus is in part determined by high-level perceptual/cognitive factors concerned with masking stimulus grouping and attention.

Information model construction of MES oriented to mechanical blanking workshop

NASA Astrophysics Data System (ADS)

Wang, Jin-bo; Wang, Jin-ye; Yue, Yan-fang; Yao, Xue-min

2016-11-01

Manufacturing Execution System (MES) is one of the crucial technologies to implement informatization management in manufacturing enterprises, and the construction of its information model is the base of MES database development. Basis on the analysis of the manufacturing process information in mechanical blanking workshop and the information requirement of MES every function module, the IDEF1X method was adopted to construct the information model of MES oriented to mechanical blanking workshop, and a detailed description of the data structure feature included in MES every function module and their logical relationship was given from the point of view of information relationship, which laid the foundation for the design of MES database.

Evaluation of quality-control data collected by the U.S. Geological Survey for routine water-quality activities at the Idaho National Laboratory, Idaho, 1996–2001

USGS Publications Warehouse

Rattray, Gordon W.

2012-01-01

The U.S. Geological Survey, in cooperation with the U.S. Department of Energy, collects surface water and groundwater samples at and near the Idaho National Laboratory as part of a routine, site-wide, water-quality monitoring program. Quality-control samples are collected as part of the program to ensure and document the quality of environmental data. From 1996 to 2001, quality-control samples consisting of 204 replicates and 27 blanks were collected at sampling sites. Paired measurements from replicates were used to calculate variability (as reproducibility and reliability) from sample collection and analysis of radiochemical, chemical, and organic constituents. Measurements from field and equipment blanks were used to estimate the potential contamination bias of constituents. The reproducibility of measurements of constituents was calculated from paired measurements as the normalized absolute difference (NAD) or the relative standard deviation (RSD). The NADs and RSDs, as well as paired measurements with censored or estimated concentrations for which NADs and RSDs were not calculated, were compared to specified criteria to determine if the paired measurements had acceptable reproducibility. If the percentage of paired measurements with acceptable reproducibility for a constituent was greater than or equal to 90 percent, then the reproducibility for that constituent was considered acceptable. The percentage of paired measurements with acceptable reproducibility was greater than or equal to 90 percent for all constituents except orthophosphate (89 percent), zinc (80 percent), hexavalent chromium (53 percent), and total organic carbon (TOC; 38 percent). The low reproducibility for orthophosphate and zinc was attributed to calculation of RSDs for replicates with low concentrations of these constituents. The low reproducibility for hexavalent chromium and TOC was attributed to the inability to preserve hexavalent chromium in water samples and high variability with the analytical method for TOC. The reliability of measurements of constituents was estimated from pooled RSDs that were calculated for discrete concentration ranges for each constituent. Pooled RSDs of 15 to 33 percent were calculated for low concentrations of gross-beta radioactivity, strontium-90, ammonia, nitrite, orthophosphate, nickel, selenium, zinc, tetrachloroethene, and toluene. Lower pooled RSDs of 0 to 12 percent were calculated for all other concentration ranges of these constituents, and for all other constituents, except for one concentration range for gross-beta radioactivity, chloride, and nitrate + nitrite; two concentration ranges for hexavalent chromium; and TOC. Pooled RSDs for the 50 to 60 picocuries per liter concentration range of gross-beta radioactivity (reported as cesium-137) and the 10 to 60 milligrams per liter (mg/L) concentration range of nitrate + nitrite (reported as nitrogen [N]) were 17 percent. Chloride had a pooled RSD of 14 percent for the 20 to less than 60 mg/L concentration range. High pooled RSDs of 40 and 51 percent were calculated for two concentration ranges for hexavalent chromium and of 60 percent for TOC. Measurements from (1) field blanks were used to estimate the potential bias associated with environmental samples from sample collection and analysis, (2) equipment blanks were used to estimate the potential bias from cross contamination of samples collected from wells where portable sampling equipment was used, and (3) a source-solution blank was used to verify that the deionized water source-solution was free of the constituents of interest. If more than one measurement was available, the bias was estimated using order statistics and the binomial probability distribution. The source-solution blank had a detectable concentration of hexavalent chromium of 2 micrograms per liter. If this bias was from a source other than the source solution, then about 84 percent of the 117 hexavalent chromium measurements from environmental samples could have a bias of 10 percent or more. Of the 14 field blanks that were collected, only chloride (0.2 milligrams per liter) and ammonia (0.03 milligrams per liter as nitrogen), in one blank each, had detectable concentrations. With an estimated confidencelevel of 95 percent, at least 80 percent of the 1,987 chloride concentrations measured from all environmental samples had a potential bias of less than 8 percent. The ammonia bias, which may have occurred at the analytical laboratory, could produce a potential bias of 5-100 percent in eight potentially affected ammonia measurements. Of the 11 equipment blanks that were collected, chloride was detected in 4 of these blanks, sodium in 3 blanks, and sulfate and hexavalent chromium were each detected in 1 blank. The concentration of hexavalent chromium in the equipment blank was the same concentration as in the source-solution blank collected on the same day, which indicates that the hexavalent chromium in the equipment blank is probably from a source other than the portable sampling equipment, such as the sample bottles or the source-solution water itself. The potential bias for chloride, sodium, and sulfate measurements was estimated for environmental samples that were collected using portable sampling equipment. For chloride, it was estimated with 93 percent confidence that at least 80 percent of the measurements had a bias of less than 18 percent. For sodium and sulfate, it was estimated with 91 percent confidence that at least 70 percent of the measurements had a bias of less than 12 and 5 percent, respectively.

Faithful replication of grating patterns in polymer through electrohydrodynamic instabilities

NASA Astrophysics Data System (ADS)

Li, H.; Yu, W.; Wang, T.; Zhang, H.; Cao, Y.; Abraham, E.; Desmulliez, M. P. Y.

2014-07-01

Electrohydrodynamic instability patterning (EHDIP) as an alternative patterning method has attracted a great deal of attention over the past decade. This article demonstrates the faithful transfer of patterns with a high aspect ratio onto a polymer film via electrohydrodynamic instabilities for a given patterned grating mask. We perform a simple mathematical analysis to determine the influence of process parameters on the pressure difference ▵P. Through numerical simulation, it is demonstrated that thick films subject to large electric fields are essential to realize this faithful replication. In particular, the influence of the material properties of the polymer on pattern replication is discussed in detail. It is found that, to achieve the smaller periodic patterns with a higher resolution, film with a larger value of the dielectric constant and smaller value of the surface tension should be chosen. In addition, an ideal replication of the mask pattern with a short evolution time is possible by reducing the viscosity of the polymer liquid. Finally, the experiments of the pattern replication with and without defects are demonstrated to compare with the numerical simulation results. It is found that experiments are in good agreement with the simulation results and prove that the numerical simulation method provides an effective way to predict faithful replication.

Unconventional critical state in YBa2Cu3O7-δ thin films with a vortex-pin lattice fabricated by masked He+ ion beam irradiation

NASA Astrophysics Data System (ADS)

Zechner, G.; Mletschnig, K. L.; Lang, W.; Dosmailov, M.; Bodea, M. A.; Pedarnig, J. D.

2018-04-01

Thin superconducting YBa2Cu3O7-δ films are patterned with a vortex-pin lattice consisting of columnar defect regions (CDs) with 180 nm diameter and 300 nm spacing. They are fabricated by irradiation with 75 keV He+ ions through a stencil mask. Peaks of the critical current reveal the commensurate trapping of vortices in domains near the edges of the sample. Upon ramping an external magnetic field, the positions of the critical current peaks are shifted from their equilibrium values to lower magnetic fields in virgin and to higher fields in field-saturated down-sweep curves, respectively. Based on previous theoretical predictions, this irreversibility is interpreted as a nonuniform, terrace-like critical state, in which individual domains are occupied by a constant number of vortices per pinning site. The magnetoresistance, probed at low current densities, is hysteretic and angle dependent and exhibits minima that correspond to the peaks of the critical current. The minima’s positions scale with the component of the magnetic field parallel to the axes of the CDs, as long as the tilted vortices can be accommodated within the CDs. This behavior, different from unirradiated films, confirms that the CDs dominate the pinning.

Wafer hotspot prevention using etch aware OPC correction

NASA Astrophysics Data System (ADS)

Hamouda, Ayman; Power, Dave; Salama, Mohamed; Chen, Ao

2016-03-01

As technology development advances into deep-sub-wavelength nodes, multiple patterning is becoming more essential to achieve the technology shrink requirements. Recently, Optical Proximity Correction (OPC) technology has proposed simultaneous correction of multiple mask-patterns to enable multiple patterning awareness during OPC correction. This is essential to prevent inter-layer hot-spots during the final pattern transfer. In state-of-art literature, multi-layer awareness is achieved using simultaneous resist-contour simulations to predict and correct for hot-spots during mask generation. However, this approach assumes a uniform etch shrink response for all patterns independent of their proximity, which isn't sufficient for the full prevention of inter-exposure hot-spot, for example different color space violations post etch or via coverage/enclosure post etch. In this paper, we explain the need to include the etch component during multiple patterning OPC. We also introduce a novel approach for Etch-aware simultaneous Multiple-patterning OPC, where we calibrate and verify a lumped model that includes the combined resist and etch responses. Adding this extra simulation condition during OPC is suitable for full chip processing from a computation intensity point of view. Also, using this model during OPC to predict and correct inter-exposures hot-spots is similar to previously proposed multiple-patterning OPC, yet our proposed approach more accurately corrects post-etch defects too.

The Fiscal Blank Check Policy and Its Impact on Operation Iraqi Freedom

DTIC Science & Technology

2006-12-01

facilities across Iraq has a significant logistical and financial tail associated with it. The increase in food and beverages (to the point of luxuries) has...THIS PAGE INTENTIONALLY LEFT BLANK v ABSTRACT Congress passed declaration of war language for World Wars I and...78 V . CONCLUSION AND RECOMMENDATIONS

Intellectual Property Rights for Digital Design and Manufacturing: Issues and Recommendations

DTIC Science & Technology

2014-06-30

for Public Release, Distribution Unlimited. iv This page intentionally left blank. Distribution A: Approved for...Distribution A: Approved for Public Release, Distribution Unlimited. viii This page intentionally left blank...challenges requires an analysis of intellectual property management and recommendations for its use in a cooperative as well as competitive market

Organizational Strategic Planning and Execution: Should Governmental Organizations Rely on Strategic Planning for the Success of the Organization?

DTIC Science & Technology

2007-06-01

THIS PAGE INTENTIONALLY LEFT BLANK i NSN 7540-01-280-5500 Standard Form 298 (Rev. 2-89) Prescribed by ANSI Std. 239-18...4 I . INTRODUCTION............................................................................................. 7 A. SCOPE...6 THIS PAGE INTENTIONALLY LEFT BLANK 7 I . INTRODUCTION A. SCOPE The intent

Strong Vocational Interest Blank Scores for Junior College Students in Five Curricula.

ERIC Educational Resources Information Center

Smith, Stuart E.

An investigation was conducted to determine if students in five junior college curricula could be differentiated by the Strong Vocational Interest Blank (SVIB) scores and if such differentiation could be improved by using several scores in combination rather than single scores separately. The SVIB was administered to 130 students at Alfred…

75 FR 9436 - Aleris Blanking and Rim Products, Inc., a Division of Aleris International, Inc., Terre Haute, IN...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-03-02

... DEPARTMENT OF LABOR Employment and Training Administration [TA-W-72,041] Aleris Blanking and Rim Products, Inc., a Division of Aleris International, Inc., Terre Haute, IN; Notice of Affirmative Determination Regarding Application for Reconsideration By application dated January 29, 2010, the petitioner...

Basin F Overburden and Soil Sampling and Analysis Study, Rocky Mountain Arsenal

DTIC Science & Technology

1982-05-01

boring sites will be es:ablished via standard :and surveyinS procedures. 3.3 Bor-ng/ Samaling Procidures Upon staking/marking of the bore holes, the folloi...procedure until the interferences have been eliminated. 3.2.2 Samale Testing Step OC (6) (Procedure Blank) The procedure blank consists of the

47 CFR 73.642 - Subscription TV service.

Code of Federal Regulations, 2011 CFR

2011-10-01

... available to the FCC upon request. (d) The use of the visual vertical blanking interval or an aural... programming may be used only upon specific FCC authorization. Letter requests to use either the video blanking intervals or aural subcarriers during periods of non-subscription programming are to be sent to the FCC in...

47 CFR 73.642 - Subscription TV service.

Code of Federal Regulations, 2010 CFR

2010-10-01

... available to the FCC upon request. (d) The use of the visual vertical blanking interval or an aural... programming may be used only upon specific FCC authorization. Letter requests to use either the video blanking intervals or aural subcarriers during periods of non-subscription programming are to be sent to the FCC in...

Predetermined Flake Production at the Lower/Middle Paleolithic Boundary: Yabrudian Scraper-Blank Technology

PubMed Central

Shimelmitz, Ron; Kuhn, Steven L.; Ronen, Avraham; Weinstein-Evron, Mina

2014-01-01

While predetermined débitage technologies are recognized beginning with the middle Acheulian, the Middle Paleolithic is usually associated with a sharp increase in their use. A study of scraper-blank technology from three Yabrudian assemblages retrieved from the early part of the Acheulo-Yabrudian complex of Tabun Cave (ca. 415–320 kyr) demonstrates a calculated and preplanned production, even if it does not show the same complexity and elaboration as in the Levallois technology. These scraper dominated assemblages show an organization of production based on an intensive use of predetermination blank technology already in place at the end of the Lower Paleolithic of the Levant. These results provide a novel perspective on the differences and similarities between the Lower and Middle Paleolithic industries. We suggest that there was a change in the paradigm in the way hominins exploited stone tools: in many Middle Paleolithic assemblages the potential of the stone tools for hafting was a central feature, in the Lower Paleolithic ergonometric considerations of manual prehension were central to the design of blanks and tools. PMID:25192429

Multiphysics modeling of the steel continuous casting process

NASA Astrophysics Data System (ADS)

Hibbeler, Lance C.

This work develops a macroscale, multiphysics model of the continuous casting of steel. The complete model accounts for the turbulent flow and nonuniform distribution of superheat in the molten steel, the elastic-viscoplastic thermal shrinkage of the solidifying shell, the heat transfer through the shell-mold interface with variable gap size, and the thermal distortion of the mold. These models are coupled together with carefully constructed boundary conditions with the aid of reduced-order models into a single tool to investigate behavior in the mold region, for practical applications such as predicting ideal tapers for a beam-blank mold. The thermal and mechanical behaviors of the mold are explored as part of the overall modeling effort, for funnel molds and for beam-blank molds. These models include high geometric detail and reveal temperature variations on the mold-shell interface that may be responsible for cracks in the shell. Specifically, the funnel mold has a column of mold bolts in the middle of the inside-curve region of the funnel that disturbs the uniformity of the hot face temperatures, which combined with the bending effect of the mold on the shell, can lead to longitudinal facial cracks. The shoulder region of the beam-blank mold shows a local hot spot that can be reduced with additional cooling in this region. The distorted shape of the funnel mold narrow face is validated with recent inclinometer measurements from an operating caster. The calculated hot face temperatures and distorted shapes of the mold are transferred into the multiphysics model of the solidifying shell. The boundary conditions for the first iteration of the multiphysics model come from reduced-order models of the process; one such model is derived in this work for mold heat transfer. The reduced-order model relies on the physics of the solution to the one-dimensional heat-conduction equation to maintain the relationships between inputs and outputs of the model. The geometric parameters in the model are calibrated such that the reduced-order model temperatures match a small, periodic subdomain of the mold. These parameters are demonstrated to be insensitive to the calibration conditions. The thermal behavior of the detailed, three-dimensional mold models used in this work can be approximated closely with a few arithmetic calculations after calibrating the reduced-order model of mold heat transfer. The example application of the model includes the effects of the molten steel jet on the solidification front and the ferrostatic pressure. The model is demonstrated to match measurements of mold heat removal and the thickness of a breakout shell all the way around the perimeter of the mold, and gives insight to the cause of breakouts in a beam-blank caster. This multiphysics modeling approach redefines the state of the art of process modeling for continuous casting, and can be~used in future work to explore the formation and prevention of defects and other practical issues. This work also explores the eigen-problem for an arbitrary 3x3 matrix. An explicit, algebraic formula for the eigenvectors is presented.

Bis-aptazyme sensors for hepatitis C virus replicase and helicase without blank signal

PubMed Central

Cho, Suhyung; Kim, Ji-Eun; Lee, Bo-Rahm; Kim, June-Hyung; Kim, Byung-Gee

2005-01-01

The fusion molecule (i.e. aptazyme) of aptamer and hammerhead ribozyme was developed as in situ sensor. Previously, the hammerhead ribozyme conjugated with aptamer through its stem II module showed a significant blank signal by self-cleavage. To reduce or remove its self-cleavage activity in the absence of target molecule, rational designs were attempted by reducing the binding affinity of the aptazyme to its RNA substrate, while maintaining the ribonuclease activity of the aptazyme. Interestingly, the bis-aptazymes which comprise the two aptamer-binding sites at both stem I and stem III of the hammerhead ribozyme showed very low blank signals, and their ratios of reaction rate constants, i.e. signal to noise ratios, were several tens to hundred times higher than those of the stem II-conjugated bis-aptazymes. The reduction in the blank signals seems to be caused by a higher dissociation constant between the main strand of the bis-aptazyme and its substrate arising from multi-point base-pairing of the bis-aptazymes. The bis-aptazymes for HCV replicase and helicase showed high selectivity against other proteins, and a linear relationship existed between their ribozyme activities and the target concentrations. In addition, a bis-aptazyme of dual functions was designed by inserting both aptamers for HCV replicase and helicase into the stem I and stem III of hammerhead ribozyme, respectively, and it also showed greater sensitivity and specificity for both proteins without blank signal. PMID:16314308

Dogs can discriminate human smiling faces from blank expressions.

PubMed

Nagasawa, Miho; Murai, Kensuke; Mogi, Kazutaka; Kikusui, Takefumi

2011-07-01

Dogs have a unique ability to understand visual cues from humans. We investigated whether dogs can discriminate between human facial expressions. Photographs of human faces were used to test nine pet dogs in two-choice discrimination tasks. The training phases involved each dog learning to discriminate between a set of photographs of their owner's smiling and blank face. Of the nine dogs, five fulfilled these criteria and were selected for test sessions. In the test phase, 10 sets of photographs of the owner's smiling and blank face, which had previously not been seen by the dog, were presented. The dogs selected the owner's smiling face significantly more often than expected by chance. In subsequent tests, 10 sets of smiling and blank face photographs of 20 persons unfamiliar to the dogs were presented (10 males and 10 females). There was no statistical difference between the accuracy in the case of the owners and that in the case of unfamiliar persons with the same gender as the owner. However, the accuracy was significantly lower in the case of unfamiliar persons of the opposite gender to that of the owner, than with the owners themselves. These results suggest that dogs can learn to discriminate human smiling faces from blank faces by looking at photographs. Although it remains unclear whether dogs have human-like systems for visual processing of human facial expressions, the ability to learn to discriminate human facial expressions may have helped dogs adapt to human society.

Radial-rotation profile forming: A new processing technology of incremental sheet metal forming

NASA Astrophysics Data System (ADS)

Laue, Robert; Härtel, Sebastian; Awiszus, Birgit

2018-05-01

Incremental forming processes (i.e., spinning) of sheet metal blanks into cylindrical cups are suitable for lower lot sizes. The produced cups were frequently used as preforms to produce workpieces in further forming steps with additional functions like profiled hollow parts [1]. The incremental forming process radial-rotation profile forming has been developed to enable the production of profiled hollow parts with low sheet thinning and good geometrical accuracy. The two principal forming steps are the production of the preform by rotational swing-folding [2] and the subsequent radial profiling of the hollow part in one clamping position. The rotational swing-folding process is based on a combination of conventional spinning and swing-folding. Therefore, a round blank rotates on a profiled mandrel and due to the swinging of a cylindrical forming tool, the blank is formed to a cup with low sheet thinning. In addition, thickening results at the edge of the blank and wrinkling occurs. However, the wrinkles are formed into the indentation of the profiled mandrel and can be reshaped as an advantage in the second process step, the radial profiling. Due to the rotation and continuous radial feed of a profiled forming tool to the profiled mandrel, the axial profile is formed in the second process step. Because of the minor relative movement in axial direction between tool and blank, low sheet thinning occurs. This is an advantage of the principle of the process.

Improved techniques reduce face mask leak during simulated neonatal resuscitation: study 2.

PubMed

Wood, Fiona E; Morley, Colin J; Dawson, Jennifer A; Kamlin, C Omar F; Owen, Louise S; Donath, Susan; Davis, Peter G

2008-05-01

Techniques of positioning and holding neonatal face masks vary. Studies have shown that leak at the face mask is common and often substantial irrespective of operator experience. (1) To identify a technique for face mask placement and hold which will minimise mask leak. (2) To investigate the effect of written instruction and demonstration of the identified technique on mask leak for two round face masks. Three experienced neonatologists compared methods of placing and holding face masks to minimise the leak for Fisher & Paykel 60 mm and Laerdal size 0/1 masks. 50 clinical staff gave positive pressure ventilation to a modified manikin designed to measure leak at the face mask. They were provided with written instructions on how to position and hold each mask and then received a demonstration. Face mask leak was measured after each teaching intervention. A technique of positioning and holding the face masks was identified which minimised leak. The mean (SD) mask leaks before instruction, after instruction and after demonstration were 55% (31), 49% (30), 33% (26) for the Laerdal mask and 57% (25), 47% (28), 32% (30) for the Fisher & Paykel mask. There was no significant difference in mask leak between the two masks. Written instruction alone reduced leak by 8.8% (CI 1.4% to 16.2%) for either mask; when combined with a demonstration mask leak was reduced by 24.1% (CI 16.4% to 31.8%). Written instruction and demonstration of the identified optimal technique resulted in significantly reduced face mask leak.

Retention of pediatric bag-mask ventilation efficacy skill by inexperienced medical student resuscitators using standard bag-mask ventilation masks, pocket masks, and blob masks.

PubMed

Kitagawa, Kory H; Nakamura, Nina M; Yamamoto, Loren

2006-03-01

To measure the ventilation efficacy with three single-sized mask types on infant and child manikin models. Medical students were recruited as study subjects inasmuch as they are inexperienced resuscitators. They were taught proper bag-mask ventilation (BMV) according to the American Heart Association guidelines on an infant and a child manikin. Subjects completed a BMV attempt successfully using the adult standard mask (to simulate the uncertainty of mask selection), pocket mask, and blob mask. Each attempt consisted of 5 ventilations assessed by chest rise of the manikin. Study subjects were asked which mask was easiest to use. Four to six weeks later, subjects repeated the procedure with no instructions (to simulate an emergency BMV encounter without immediate pre-encounter teaching). Forty-six volunteer subjects were studied. During the first attempt, subjects preferred the standard and blob masks over the pocket mask. For the second attempt, the blob mask was preferred over the standard mask, and few liked the pocket mask. Using the standard, blob, and pocket masks on the child manikin, 39, 42, and 20 subjects, respectively, were able to achieve adequate ventilation. Using the standard, blob, and pocket masks on the infant manikin, 45, 45, and 11 subjects, respectively, were able to achieve adequate ventilation. Both the standard and blob masks are more effective than the pocket mask at achieving adequate ventilation on infant and child manikins in this group of inexperienced medical student resuscitators, who most often preferred the blob mask.

Rates of initial acceptance of PAP masks and outcomes of mask switching.

PubMed

Bachour, Adel; Vitikainen, Pirjo; Maasilta, Paula

2016-05-01

Recently, we noticed a considerable development in alleviating problems related to positive airway pressure (PAP) masks. In this study, we report on the initial PAP mask acceptance rates and the effects of mask switching on mask-related symptoms. We prospectively collected all cases of mask switching in our sleep unit for a period of 14 months. At the time of the study, we used ResMed™ CPAP devices and masks. Mask switching was defined as replacing a mask used for at least 1 day with another type of mask. Changing to a different size but keeping the same type of mask did not count as mask switching. Switching outcomes were considered failed if the initial problem persisted or reappeared during the year that followed switching. Our patient pool was 2768. We recorded 343 cases of mask switching among 267 patients. Of the 566 patients who began new PAP therapy, 108 (39 women) had switched masks, yielding an initial mask acceptance rate of 81 %. The reason for switching was poor-fit/uncomfortable mask in 39 %, leak-related in 30 %, outdated model in 25 %, and nasal stuffiness in 6 % of cases; mask switching resolved these problems in 61 %. Mask switching occurred significantly (p = 0.037) more often in women and in new PAP users. The odds ratio for abandoning PAP therapy within 1 year after mask switching was 7.2 times higher (interval 4.7-11.1) than not switching masks. The initial PAP mask acceptance rate was high. Patients who switched their masks are at greater risk for abandoning PAP therapy.

Platelet-Derived Growth Factor Promotes Periodontal Regeneration in Localized Osseous Defects: 36-Month Extension Results From a Randomized, Controlled, Double-Masked Clinical Trial

PubMed Central

Nevins, Myron; Kao, Richard T.; McGuire, Michael K.; McClain, Pamela K.; Hinrichs, James E.; McAllister, Bradley S.; Reddy, Michael S.; Nevins, Marc L.; Genco, Robert J.; Lynch, Samuel E.; Giannobile, William V.

2017-01-01

Background Recombinant human platelet-derived growth factor (rhPDGF) is safe and effective for the treatment of periodontal defects in short-term studies up to 6 months in duration. We now provide results from a 36-month extension study of a multicenter, randomized, controlled clinical trial evaluating the effect and long-term stability of PDGF-BB treatment in patients with localized severe periodontal osseous defects. Methods A total of 135 participants were enrolled fromsix clinical centers for an extension trial. Eighty-three individuals completed the study at 36 months and were included in the analysis. The study investigated the local application of β-tricalcium phosphate scaffold matrix with or without two different dose levels of PDGF (0.3 or 1.0 mg/mL PDGF-BB) in patients possessing one localized periodontal osseous defect. Composite analysis for clinical and radiographic evidence of treatment success was defined as percentage of cases with clinical attachment level (CAL) ≥2.7mmand linear bone growth (LBG) ≥1.1 mm. Results The participants exceeding this composite outcome benchmark in the 0.3 mg/mL rhPDGF-BB group went from 62.2% at 12 months, 75.9% at 24 months, to 87.0% at 36 months compared with 39.5%, 48.3%, and 53.8%, respectively, in the scaffold control group at these same time points (P <0.05). Although there were no significant increases in CAL and LBG at 36 months among all groups, there were continued increases in CAL gain, LBG, and percentage bone fill over time, suggesting overall stability of the regenerative response. Conclusion PDGF-BB in a synthetic scaffold matrix promotes long-term stable clinical and radiographic improvements as measured by composite outcomes for CAL gain and LBG for patients possessing localized periodontal defects (ClinicalTrials.gov no. CT01530126). PMID:22612364

150-nm DR contact holes die-to-database inspection

NASA Astrophysics Data System (ADS)

Kuo, Shen C.; Wu, Clare; Eran, Yair; Staud, Wolfgang; Hemar, Shirley; Lindman, Ofer

2000-07-01

Using a failure analysis-driven yield enhancements concept, based on an optimization of the mask manufacturing process and UV reticle inspection is studied and shown to improve the contact layer quality. This is achieved by relating various manufacturing processes to very fine tuned contact defect detection. In this way, selecting an optimized manufacturing process with fine-tuned inspection setup is achieved in a controlled manner. This paper presents a study, performed on a specially designed test reticle, which simulates production contact layers of design rule 250nm, 180nm and 150nm. This paper focuses on the use of advanced UV reticle inspection techniques as part of the process optimization cycle. Current inspection equipment uses traditional and insufficient methods of small contact-hole inspection and review.

Science & Technology Review September/October 2008

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bearinger, J P

2008-07-21

This issue has the following articles: (1) Answering Scientists Most Audacious Questions--Commentary by Dona Crawford; (2) Testing the Accuracy of the Supernova Yardstick--High-resolution simulations are advancing understanding of Type Ia supernovae to help uncover the mysteries of dark energy; (3) Developing New Drugs and Personalized Medical Treatment--Accelerator mass spectrometry is emerging as an essential tool for assessing the effects of drugs in humans; (4) Triage in a Patch--A painless skin patch and accompanying detector can quickly indicate human exposure to biological pathogens, chemicals, explosives, or radiation; and (5) Smoothing Out Defects for Extreme Ultraviolet Lithography--A process for smoothing mask defectsmore » helps move extreme ultraviolet lithography one step closer to creating smaller, more powerful computer chips.« less

High-NA EUV projection lens with central obscuration

NASA Astrophysics Data System (ADS)

Zhevlakov, A. P.; Seisyan, R. P.; Bespalov, V. G.; Elizarov, V. V.; Grishkanich, A. S.; Kascheev, S. V.; Bagdasarov, A. A.; Sidorov, I. S.

2016-03-01

The lenses with coaxial mirrors allow obtain NA values up to of 0.8 and demagnification β >=10. The larger β value leads to the mask cost reducing, as in this case, the elements of the IC pattern template can be made bigger and, therefore, with fewer defects. Coaxial schemes can engender a problem of the image plane shift beyond the projection lens element boundaries near the wafer. The projection lens consisting of four coaxial mirrors with NA= 0.485 and s = 12 combined with the "Vanguard" imaging subsystem have been designed. According to the computation the circuit features at 10 nm in center and 20 nm on the edge of 12.4 mm field of view can be imaged.

Testing the efficacy of homemade masks: would they protect in an influenza pandemic?

PubMed

Davies, Anna; Thompson, Katy-Anne; Giri, Karthika; Kafatos, George; Walker, Jimmy; Bennett, Allan

2013-08-01

This study examined homemade masks as an alternative to commercial face masks. Several household materials were evaluated for the capacity to block bacterial and viral aerosols. Twenty-one healthy volunteers made their own face masks from cotton t-shirts; the masks were then tested for fit. The number of microorganisms isolated from coughs of healthy volunteers wearing their homemade mask, a surgical mask, or no mask was compared using several air-sampling techniques. The median-fit factor of the homemade masks was one-half that of the surgical masks. Both masks significantly reduced the number of microorganisms expelled by volunteers, although the surgical mask was 3 times more effective in blocking transmission than the homemade mask. Our findings suggest that a homemade mask should only be considered as a last resort to prevent droplet transmission from infected individuals, but it would be better than no protection.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Webb, Aaron P.; Carlson, Charles T.; Weaver, William T.

A mask alignment system for providing precise and repeatable alignment between ion implantation masks and workpieces. The system includes a mask frame having a plurality of ion implantation masks loosely connected thereto. The mask frame is provided with a plurality of frame alignment cavities, and each mask is provided with a plurality of mask alignment cavities. The system further includes a platen for holding workpieces. The platen may be provided with a plurality of mask alignment pins and frame alignment pins configured to engage the mask alignment cavities and frame alignment cavities, respectively. The mask frame can be lowered ontomore » the platen, with the frame alignment cavities moving into registration with the frame alignment pins to provide rough alignment between the masks and workpieces. The mask alignment cavities are then moved into registration with the mask alignment pins, thereby shifting each individual mask into precise alignment with a respective workpiece.« less

A cluster randomised trial of cloth masks compared with medical masks in healthcare workers

PubMed Central

MacIntyre, C Raina; Seale, Holly; Dung, Tham Chi; Hien, Nguyen Tran; Nga, Phan Thi; Chughtai, Abrar Ahmad; Rahman, Bayzidur; Dwyer, Dominic E; Wang, Quanyi

2015-01-01

Objective The aim of this study was to compare the efficacy of cloth masks to medical masks in hospital healthcare workers (HCWs). The null hypothesis is that there is no difference between medical masks and cloth masks. Setting 14 secondary-level/tertiary-level hospitals in Hanoi, Vietnam. Participants 1607 hospital HCWs aged ≥18 years working full-time in selected high-risk wards. Intervention Hospital wards were randomised to: medical masks, cloth masks or a control group (usual practice, which included mask wearing). Participants used the mask on every shift for 4 consecutive weeks. Main outcome measure Clinical respiratory illness (CRI), influenza-like illness (ILI) and laboratory-confirmed respiratory virus infection. Results The rates of all infection outcomes were highest in the cloth mask arm, with the rate of ILI statistically significantly higher in the cloth mask arm (relative risk (RR)=13.00, 95% CI 1.69 to 100.07) compared with the medical mask arm. Cloth masks also had significantly higher rates of ILI compared with the control arm. An analysis by mask use showed ILI (RR=6.64, 95% CI 1.45 to 28.65) and laboratory-confirmed virus (RR=1.72, 95% CI 1.01 to 2.94) were significantly higher in the cloth masks group compared with the medical masks group. Penetration of cloth masks by particles was almost 97% and medical masks 44%. Conclusions This study is the first RCT of cloth masks, and the results caution against the use of cloth masks. This is an important finding to inform occupational health and safety. Moisture retention, reuse of cloth masks and poor filtration may result in increased risk of infection. Further research is needed to inform the widespread use of cloth masks globally. However, as a precautionary measure, cloth masks should not be recommended for HCWs, particularly in high-risk situations, and guidelines need to be updated. Trial registration number Australian New Zealand Clinical Trials Registry: ACTRN12610000887077. PMID:25903751

47 CFR 73.646 - Telecommunications Service on the Vertical Blanking Interval and in the Visual Signal.

Code of Federal Regulations, 2011 CFR

2011-10-01

... Blanking Interval and in the Visual Signal. 73.646 Section 73.646 Telecommunication FEDERAL COMMUNICATIONS... transmission of data, processed information, or any other communication in either a digital or analog mode. (b... kinds of service that may be provided include, but are not limited to, teletext, paging, computer...

47 CFR 73.646 - Telecommunications Service on the Vertical Blanking Interval and in the Visual Signal.

Code of Federal Regulations, 2014 CFR

2014-10-01

... Blanking Interval and in the Visual Signal. 73.646 Section 73.646 Telecommunication FEDERAL COMMUNICATIONS... transmission of data, processed information, or any other communication in either a digital or analog mode. (b... kinds of service that may be provided include, but are not limited to, teletext, paging, computer...

47 CFR 73.646 - Telecommunications Service on the Vertical Blanking Interval and in the Visual Signal.

Code of Federal Regulations, 2012 CFR

2012-10-01

... Blanking Interval and in the Visual Signal. 73.646 Section 73.646 Telecommunication FEDERAL COMMUNICATIONS... transmission of data, processed information, or any other communication in either a digital or analog mode. (b... kinds of service that may be provided include, but are not limited to, teletext, paging, computer...

47 CFR 73.646 - Telecommunications Service on the Vertical Blanking Interval and in the Visual Signal.

Code of Federal Regulations, 2010 CFR

2010-10-01

... Blanking Interval and in the Visual Signal. 73.646 Section 73.646 Telecommunication FEDERAL COMMUNICATIONS... transmission of data, processed information, or any other communication in either a digital or analog mode. (b... kinds of service that may be provided include, but are not limited to, teletext, paging, computer...