EUVL masks: paving the path for commercialization

NASA Astrophysics Data System (ADS)

Mangat, Pawitter J. S.; Hector, Scott D.

2001-09-01

Optical projection lithography has been the principal vehicle of semiconductor manufacturing for more than 20 years and is marching aggressively to satisfy the needs of semiconductor manufacturers for 100nm devices. However, the complexity of optical lithography continues to increase as wavelength reduction continues to 157nm. Extreme Ultraviolet Lithography (EUVL), with wavelength from 13-14 nm, is evolving as a leading next generation lithography option for semiconductor industry to stay on the path laid by Moore's Law. Masks are a critical part of the success of any technology and are considered to be high risk both for optical lithography and NGL technologies for sub-100nm lithography. Two key areas of EUV mask fabrication are reflective multilayer deposition and absorber patterning. In the case of reflective multilayers, delivering defect free multilayers for mask blanks is the biggest challenge. Defect mitigation is being explored as a possible option to smooth the multilayer defects in addition to optimization of the deposition process to reduce defect density. The mask patterning process needs focus on the defect-free absorber stack patterning process, mask cleaning, inspection and repair. In addition, there is considerable effort to understand by simulations, the defect printability, thermal and mechanical distortions, and non-telecentric illumination, to mention a few. To protect the finished mask from defects added during use, a removable pellicle strategy combined with thermophoretic protection during exposure is being developed. Recent migration to square form factor using low thermal expansion material (LTEM) is advantageous as historical developments in optical masks can be applied to EUV mask patterning. This paper addresses recent developments in the EUV mask patterning and highlights critical manufacturing process controls needed to fabricate defect-free full field masks with CD and image placement specifications for sub-70nm node lithography. No technology can be implemented without establishing the commercial infrastructure. The rising cost seems to be a major issue affecting the technology development. With respect to mask fabrication for commercial availability, a virtual mask shop analysis is presented that indicates that the process cost for EUVL masks are comparable to the high end optical mask with a reasonable yield. However, the cost for setting up a new mask facility is considerably high.

Aerial image measurement technique for automated reticle defect disposition (ARDD) in wafer fabs

NASA Astrophysics Data System (ADS)

Zibold, Axel M.; Schmid, Rainer M.; Stegemann, B.; Scheruebl, Thomas; Harnisch, Wolfgang; Kobiyama, Yuji

2004-08-01

The Aerial Image Measurement System (AIMS)* for 193 nm lithography emulation has been brought into operation successfully worldwide. A second generation system comprising 193 nm AIMS capability, mini-environment and SMIF, the AIMS fab 193 plus is currently introduced into the market. By adjustment of numerical aperture (NA), illumination type and partial illumination coherence to match the conditions in 193 nm steppers or scanners, it can emulate the exposure tool for any type of reticles like binary, OPC and PSM down to the 65 nm node. The system allows a rapid prediction of wafer printability of defects or defect repairs, and critical features, like dense patterns or contacts on the masks without the need to perform expensive image qualification consisting of test wafer exposures followed by SEM measurements. Therefore, AIMS is a mask quality verification standard for high-end photo masks and established in mask shops worldwide. The progress on the AIMS technology described in this paper will highlight that besides mask shops there will be a very beneficial use of the AIMS in the wafer fab and we propose an Automated Reticle Defect Disposition (ARDD) process. With smaller nodes, where design rules are 65 nm or less, it is expected that smaller defects on reticles will occur in increasing numbers in the wafer fab. These smaller mask defects will matter more and more and become a serious yield limiting factor. With increasing mask prices and increasing number of defects and severability on reticles it will become cost beneficial to perform defect disposition on the reticles in wafer production. Currently ongoing studies demonstrate AIMS benefits for wafer fab applications. An outlook will be given for extension of 193 nm aerial imaging down to the 45 nm node based on emulation of immersion scanners.

The verification of printability about marginal defects and the detectability at the inspection tool in sub 50nm node

NASA Astrophysics Data System (ADS)

Lee, Hyemi; Jeong, Goomin; Seo, Kangjun; Kim, Sangchul; kim, changreol

2008-05-01

Since mask design rule is smaller and smaller, Defects become one of the issues dropping the mask yield. Furthermore controlled defect size become smaller while masks are manufactured. According to ITRS roadmap on 2007, controlled defect size is 46nm in 57nm node and 36nm in 45nm node on a mask. However the machine development is delayed in contrast with the speed of the photolithography development. Generally mask manufacturing process is divided into 3 parts. First part is patterning on a mask and second part is inspecting the pattern and repairing the defect on the mask. At that time, inspection tools of transmitted light type are normally used and are the most trustful as progressive type in the developed inspection tools until now. Final part is shipping the mask after the qualifying the issue points and weak points. Issue points on a mask are qualified by using the AIMS (Aerial image measurement system). But this system is including the inherent error possibility, which is AIMS measures the issue points based on the inspection results. It means defects printed on a wafer are over the specific size detected by inspection tools and the inspection tool detects the almost defects. Even though there are no tools to detect the 46nm and 36nm defects suggested by ITRS roadmap, this assumption is applied to manufacturing the 57nm and 45nm device. So we make the programmed defect mask consisted with various defect type such as spot, clear extension, dark extension and CD variation on L/S(line and space), C/H(contact hole) and Active pattern in 55nm and 45nm node. And the programmed defect mask was inspected by using the inspection tool of transmitted light type and was measured by using AIMS 45-193i. Then the marginal defects were compared between the inspection tool and AIMS. Accordingly we could verify whether defect size is proper or not, which was suggested to be controlled on a mask by ITRS roadmap. Also this result could suggest appropriate inspection tools for next generation device among the inspection tools of transmitted light type, reflected light type and aerial image type.

The difficult business model for mask equipment makers and mask infrastructure development support from consortia and governments

NASA Astrophysics Data System (ADS)

Hector, Scott

2005-11-01

The extension of optical projection lithography through immersion to patterning features with half pitch <=65 nm is placing greater demands on the mask. Strong resolution enhancement techniques (RETs), such as embedded and alternating phase shift masks and complex model-based optical proximity correction, are required to compensate for diffraction and limited depth of focus (DOF). To fabricate these masks, many new or upgraded tools are required to write patterns, measure feature sizes and placement, inspect for defects, review defect printability and repair defects on these masks. Beyond the significant technical challenges, suppliers of mask fabrication equipment face the challenge of being profitable in the small market for mask equipment while encountering significant R&D expenses to bring new generations of mask fabrication equipment to market. The total available market for patterned masks is estimated to be $2.5B to $2.9B per year. The patterned mask market is about 20% of the market size for lithography equipment and materials. The total available market for mask-making equipment is estimated to be about $800M per year. The largest R&D affordability issue arises for the makers of equipment for fabricating masks where total available sales are typically less than ten units per year. SEMATECH has used discounted cash flow models to predict the affordable R&D while maintaining industry accepted internal rates of return. The results have been compared to estimates of the total R&D cost to bring a new generation of mask equipment to market for various types of tools. The analysis revealed that affordability of the required R&D is a significant problem for many suppliers of mask-making equipment. Consortia such as SEMATECH and Selete have played an important role in cost sharing selected mask equipment and material development projects. Governments in the United States, in Europe and in Japan have also helped equipment suppliers with support for R&D. This paper summarizes the challenging business model for mask equipment suppliers and highlight government support for mask equipment and materials development.

Increasing reticle inspection efficiency and reducing wafer printchecks at 14nm using automated defect classification and simulation

NASA Astrophysics Data System (ADS)

Paracha, Shazad; Goodman, Eliot; Eynon, Benjamin G.; Noyes, Ben F.; Ha, Steven; Kim, Jong-Min; Lee, Dong-Seok; Lee, Dong-Heok; Cho, Sang-Soo; Ham, Young M.; Vacca, Anthony D.; Fiekowsky, Peter J.; Fiekowsky, Daniel I.

2014-10-01

IC fabs inspect critical masks on a regular basis to ensure high wafer yields. These requalification inspections are costly for many reasons including the capital equipment, system maintenance, and labor costs. In addition, masks typically remain in the "requal" phase for extended, non-productive periods of time. The overall "requal" cycle time in which reticles remain non-productive is challenging to control. Shipping schedules can slip when wafer lots are put on hold until the master critical layer reticle is returned to production. Unfortunately, substituting backup critical layer reticles can significantly reduce an otherwise tightly controlled process window adversely affecting wafer yields. One major requal cycle time component is the disposition process of mask inspections containing hundreds of defects. Not only is precious non-productive time extended by reviewing hundreds of potentially yield-limiting detections, each additional classification increases the risk of manual review techniques accidentally passing real yield limiting defects. Even assuming all defects of interest are flagged by operators, how can any person's judgment be confident regarding lithographic impact of such defects? The time reticles spend away from scanners combined with potential yield loss due to lithographic uncertainty presents significant cycle time loss and increased production costs An automatic defect analysis system (ADAS), which has been in fab production for numerous years, has been improved to handle the new challenges of 14nm node automate reticle defect classification by simulating each defect's printability under the intended illumination conditions. In this study, we have created programmed defects on a production 14nm node critical-layer reticle. These defects have been analyzed with lithographic simulation software and compared to the results of both AIMS optical simulation and to actual wafer prints.

Increasing reticle inspection efficiency and reducing wafer print-checks using automated defect classification and simulation

NASA Astrophysics Data System (ADS)

Ryu, Sung Jae; Lim, Sung Taek; Vacca, Anthony; Fiekowsky, Peter; Fiekowsky, Dan

2013-09-01

IC fabs inspect critical masks on a regular basis to ensure high wafer yields. These requalification inspections are costly for many reasons including the capital equipment, system maintenance, and labor costs. In addition, masks typically remain in the "requal" phase for extended, non-productive periods of time. The overall "requal" cycle time in which reticles remain non-productive is challenging to control. Shipping schedules can slip when wafer lots are put on hold until the master critical layer reticle is returned to production. Unfortunately, substituting backup critical layer reticles can significantly reduce an otherwise tightly controlled process window adversely affecting wafer yields. One major requal cycle time component is the disposition process of mask inspections containing hundreds of defects. Not only is precious non-productive time extended by reviewing hundreds of potentially yield-limiting detections, each additional classification increases the risk of manual review techniques accidentally passing real yield limiting defects. Even assuming all defects of interest are flagged by operators, how can any person's judgment be confident regarding lithographic impact of such defects? The time reticles spend away from scanners combined with potential yield loss due to lithographic uncertainty presents significant cycle time loss and increased production costs. Fortunately, a software program has been developed which automates defect classification with simulated printability measurement greatly reducing requal cycle time and improving overall disposition accuracy. This product, called ADAS (Auto Defect Analysis System), has been tested in both engineering and high-volume production environments with very successful results. In this paper, data is presented supporting significant reduction for costly wafer print checks, improved inspection area productivity, and minimized risk of misclassified yield limiting defects.

Automatically high accurate and efficient photomask defects management solution for advanced lithography manufacture

NASA Astrophysics Data System (ADS)

Zhu, Jun; Chen, Lijun; Ma, Lantao; Li, Dejian; Jiang, Wei; Pan, Lihong; Shen, Huiting; Jia, Hongmin; Hsiang, Chingyun; Cheng, Guojie; Ling, Li; Chen, Shijie; Wang, Jun; Liao, Wenkui; Zhang, Gary

2014-04-01

Defect review is a time consuming job. Human error makes result inconsistent. The defects located on don't care area would not hurt the yield and no need to review them such as defects on dark area. However, critical area defects can impact yield dramatically and need more attention to review them such as defects on clear area. With decrease in integrated circuit dimensions, mask defects are always thousands detected during inspection even more. Traditional manual or simple classification approaches are unable to meet efficient and accuracy requirement. This paper focuses on automatic defect management and classification solution using image output of Lasertec inspection equipment and Anchor pattern centric image process technology. The number of mask defect found during an inspection is always in the range of thousands or even more. This system can handle large number defects with quick and accurate defect classification result. Our experiment includes Die to Die and Single Die modes. The classification accuracy can reach 87.4% and 93.3%. No critical or printable defects are missing in our test cases. The missing classification defects are 0.25% and 0.24% in Die to Die mode and Single Die mode. This kind of missing rate is encouraging and acceptable to apply on production line. The result can be output and reloaded back to inspection machine to have further review. This step helps users to validate some unsure defects with clear and magnification images when captured images can't provide enough information to make judgment. This system effectively reduces expensive inline defect review time. As a fully inline automated defect management solution, the system could be compatible with current inspection approach and integrated with optical simulation even scoring function and guide wafer level defect inspection.

Expanding the printable design space for lithography processes utilizing a cut mask

NASA Astrophysics Data System (ADS)

Wandell, Jerome; Salama, Mohamed; Wilkinson, William; Curtice, Mark; Feng, Jui-Hsuan; Gao, Shao Wen; Asthana, Abhishek

2016-03-01

The utilization of a cut-mask in semiconductor patterning processes has been in practice for logic devices since the inception of 32nm-node devices, notably with unidirectional gate level printing. However, the microprocessor applications where cut-mask patterning methods are used are expanding as Self-Aligned Double Patterning (SADP) processes become mainstream for 22/14nm fin diffusion, and sub-14nm metal levels. One common weakness for these types of lithography processes is that the initial pattern requiring the follow-up cut-mask typically uses an extreme off-axis imaging source such as dipole to enhance the resolution and line-width roughness (LWR) for critical dense patterns. This source condition suffers from poor process margin in the semi-dense (forbidden pitch) realm and wrong-way directional design spaces. Common pattern failures in these limited design regions include bridging and extra-printing defects that are difficult to resolve with traditional mask improvement means. This forces the device maker to limit the allowable geometries that a designer may use on a device layer. This paper will demonstrate methods to expand the usable design space on dipole-like processes such as unidirectional gate and SADP processes by utilizing the follow-up cut mask to improve the process window. Traditional mask enhancement means for improving the process window in this design realm will be compared to this new cut-mask approach. The unique advantages and disadvantages of the cut-mask solution will be discussed in contrast to those customary methods.

SEM AutoAnalysis: enhancing photomask and NIL defect disposition and review

NASA Astrophysics Data System (ADS)

Schulz, Kristian; Egodage, Kokila; Tabbone, Gilles; Ehrlich, Christian; Garetto, Anthony

2017-06-01

For defect disposition and repair verification regarding printability, AIMS™ is the state of the art measurement tool in industry. With its unique capability of capturing aerial images of photomasks it is the one method that comes closest to emulating the printing behaviour of a scanner. However for nanoimprint lithography (NIL) templates aerial images cannot be applied to evaluate the success of a repair process. Hence, for NIL defect dispositioning scanning, electron microscopy (SEM) imaging is the method of choice. In addition, it has been a standard imaging method for further root cause analysis of defects and defect review on optical photomasks which enables 2D or even 3D mask profiling at high resolutions. In recent years a trend observed in mask shops has been the automation of processes that traditionally were driven by operators. This of course has brought many advantages one of which is freeing cost intensive labour from conducting repetitive and tedious work. Furthermore, it reduces variability in processes due to different operator skill and experience levels which at the end contributes to eliminating the human factor. Taking these factors into consideration, one of the software based solutions available under the FAVOR® brand to support customer needs is the aerial image evaluation software, AIMS™ AutoAnalysis (AAA). It provides fully automated analysis of AIMS™ images and runs in parallel to measurements. This is enabled by its direct connection and communication with the AIMS™tools. As one of many positive outcomes, generating automated result reports is facilitated, standardizing the mask manufacturing workflow. Today, AAA has been successfully introduced into production at multiple customers and is supporting the workflow as described above. These trends indeed have triggered the demand for similar automation with respect to SEM measurements leading to the development of SEM AutoAnalysis (SAA). It aims towards a fully automated SEM image evaluation process utilizing a completely different algorithm due to the different nature of SEM images and aerial images. Both AAA and SAA are the building blocks towards an image evaluation suite in the mask shop industry.

A novel approach to mask defect inspection

NASA Astrophysics Data System (ADS)

Sagiv, Amir; Shirman, Yuri; Mangan, Shmoolik

2008-10-01

Memory chips, now constituting a major part of semiconductor market, posit a special challenge for inspection, as they are generally produced with the smallest half-pitch available with today's technology. This is true, in particular, to photomasks of advanced memory devices, which are at the forefront of the "low-k1" regime. In this paper we present a novel photomask inspection approach, that is particularly suitable for low-k1 layers of advanced memory chips, owing to their typical dense and periodic structure. The method we present can produce a very strong signal for small mask defects, by suppression of the modulation of the pattern's image. Unlike dark-field detection, however, here a single diffraction order associated with the pattern generates a constant "gray" background image, that is used for signal enhancement. We define the theoretical basis for the new detection technique, and show, both analytically and numerically, that it can easily achieve a detection line past the printability spec, and that in cases it is at least as sensitive as high-resolution based detection. We also demonstrate this claim experimentally on a customer mask, using the platform of Applied Material's newly released Aera2TM mask inspection tool. The high sensitivity demonstrates the important and often overlooked concept that resolution is not synonymous with sensitivity. The novel detection method is advantageous in several other aspects, such as the very simple implementation, the high throughput, and the relatively simple pre- and post-processing algorithms required for signal extraction. These features, and in particular the very high sensitivity, make this novel detection method an attractive inspection option for advanced memory devices.

Genetics Home Reference: congenital bile acid synthesis defect type 1

MedlinePlus

... type 1 Congenital bile acid synthesis defect type 1 Printable PDF Open All Close All Enable Javascript to view the expand/collapse boxes. Description Congenital bile acid synthesis defect type 1 ...

Prospect of EUV mask repair technology using e-beam tool

NASA Astrophysics Data System (ADS)

Kanamitsu, Shingo; Hirano, Takashi; Suga, Osamu

2010-09-01

Currently, repair machines used for advanced photomasks utilize principle method like as FIB, AFM, and EB. There are specific characteristic respectively, thus they have an opportunity to be used in suitable situation. But when it comes to EUV generation, pattern size is so small highly expected as under 80nm that higher image resolution and repair accuracy is needed for its machines. Because FIB machine has intrinsic damage problem induced by Ga ion and AFM machine has critical tip size issue, those machines are basically difficult to be applied for EUV generation. Consequently, we focused on EB repair tool for research work. EB repair tool has undergone practical milestone about MoSi based masks. We have applied same process which is used for MoSi to EUV blank and confirmed its reaction. Then we found some severe problems which show uncontrollable feature due to its enormously strong reaction between etching gas and absorber material. Though we could etch opaque defect with conventional method and get the edge shaped straight by top-down SEM viewing, there were problems like as sidewall undercut or local erosion depending on defect shape. In order to cope with these problems, the tool vender has developed a new process and reported it through an international conference [1]. We have evaluated the new process mentioned above in detail. In this paper, we will bring the results of those evaluations. Several experiments for repair accuracy, process stability, and other items have been done under estimation of practical condition assuming diversified size and shape defects. A series of actual printability tests will be also included. On the basis of these experiments, we consider the possibility of EB-repair application for 20nm pattern.

Printability of alloys for additive manufacturing

PubMed Central

Mukherjee, T.; Zuback, J. S.; De, A.; DebRoy, T.

2016-01-01

Although additive manufacturing (AM), or three dimensional (3D) printing, provides significant advantages over existing manufacturing techniques, metallic parts produced by AM are susceptible to distortion, lack of fusion defects and compositional changes. Here we show that the printability, or the ability of an alloy to avoid these defects, can be examined by developing and testing appropriate theories. A theoretical scaling analysis is used to test vulnerability of various alloys to thermal distortion. A theoretical kinetic model is used to examine predisposition of different alloys to AM induced compositional changes. A well-tested numerical heat transfer and fluid flow model is used to compare susceptibilities of various alloys to lack of fusion defects. These results are tested and validated with independent experimental data. The findings presented in this paper are aimed at achieving distortion free, compositionally sound and well bonded metallic parts. PMID:26796864

Automatic classification of blank substrate defects

NASA Astrophysics Data System (ADS)

Boettiger, Tom; Buck, Peter; Paninjath, Sankaranarayanan; Pereira, Mark; Ronald, Rob; Rost, Dan; Samir, Bhamidipati

2014-10-01

Mask preparation stages are crucial in mask manufacturing, since this mask is to later act as a template for considerable number of dies on wafer. Defects on the initial blank substrate, and subsequent cleaned and coated substrates, can have a profound impact on the usability of the finished mask. This emphasizes the need for early and accurate identification of blank substrate defects and the risk they pose to the patterned reticle. While Automatic Defect Classification (ADC) is a well-developed technology for inspection and analysis of defects on patterned wafers and masks in the semiconductors industry, ADC for mask blanks is still in the early stages of adoption and development. Calibre ADC is a powerful analysis tool for fast, accurate, consistent and automatic classification of defects on mask blanks. Accurate, automated classification of mask blanks leads to better usability of blanks by enabling defect avoidance technologies during mask writing. Detailed information on blank defects can help to select appropriate job-decks to be written on the mask by defect avoidance tools [1][4][5]. Smart algorithms separate critical defects from the potentially large number of non-critical defects or false defects detected at various stages during mask blank preparation. Mechanisms used by Calibre ADC to identify and characterize defects include defect location and size, signal polarity (dark, bright) in both transmitted and reflected review images, distinguishing defect signals from background noise in defect images. The Calibre ADC engine then uses a decision tree to translate this information into a defect classification code. Using this automated process improves classification accuracy, repeatability and speed, while avoiding the subjectivity of human judgment compared to the alternative of manual defect classification by trained personnel [2]. This paper focuses on the results from the evaluation of Automatic Defect Classification (ADC) product at MP Mask Technology Center (MPMask). The Calibre ADC tool was qualified on production mask blanks against the manual classification. The classification accuracy of ADC is greater than 95% for critical defects with an overall accuracy of 90%. The sensitivity to weak defect signals and locating the defect in the images is a challenge we are resolving. The performance of the tool has been demonstrated on multiple mask types and is ready for deployment in full volume mask manufacturing production flow. Implementation of Calibre ADC is estimated to reduce the misclassification of critical defects by 60-80%.

SEMATECH produces defect-free EUV mask blanks: defect yield and immediate challenges

NASA Astrophysics Data System (ADS)

Antohe, Alin O.; Balachandran, Dave; He, Long; Kearney, Patrick; Karumuri, Anil; Goodwin, Frank; Cummings, Kevin

2015-03-01

Availability of defect-free reflective mask has been one of the most critical challenges to extreme ultraviolet lithography (EUVL). To mitigate the risk, significant progress has been made on defect detection, pattern shifting, and defect repair. Clearly such mitigation strategies are based on the assumption that defect counts and sizes from incoming mask blanks must be below practical levels depending on mask specifics. The leading industry consensus for early mask product development is that there should be no defects greater than 80 nm in the quality area, 132 mm x 132 mm. In addition less than 10 defects smaller than 80 nm may be mitigable. SEMATECH has been focused on EUV mask blank defect reduction using Veeco Nexus TM IBD platform, the industry standard for mask blank production, and assessing if IBD technology can be evolved to a manufacturing solution. SEMATECH has recently announced a breakthrough reduction of defects in the mask blank deposition process resulting in the production of two defect-free EUV mask blanks at 54 nm inspection sensitivity (SiO2 equivalent). This paper will discuss the dramatic reduction of baseline EUV mask blank defects, review the current deposition process run and compare results with previous process runs. Likely causes of remaining defects will be discussed based on analyses as characterized by their compositions and whether defects are embedded in the multilayer stack or non-embedded.

Printability of alloys for additive manufacturing

DOE PAGES

Mukherjee, T.; Zuback, J. S.; De, A.; ...

2016-01-22

Although additive manufacturing (AM), or three dimensional (3D) printing, provides significant advantages over existing manufacturing techniques, metallic parts produced by AM are susceptible to distortion, lack of fusion defects and compositional changes. Here we show that the printability, or the ability of an alloy to avoid these defects, can be examined by developing and testing appropriate theories. A theoretical scaling analysis is used to test vulnerability of various alloys to thermal distortion. A theoretical kinetic model is used to examine predisposition of different alloys to AM induced compositional changes. A well-tested numerical heat transfer and fluid flow model is usedmore » to compare susceptibilities of various alloys to lack of fusion defects. These results are tested and validated with independent experimental data. Here, the findings presented in this paper are aimed at achieving distortion free, compositionally sound and well bonded metallic parts.« less

An open-architecture approach to defect analysis software for mask inspection systems

NASA Astrophysics Data System (ADS)

Pereira, Mark; Pai, Ravi R.; Reddy, Murali Mohan; Krishna, Ravi M.

2009-04-01

Industry data suggests that Mask Inspection represents the second biggest component of Mask Cost and Mask Turn Around Time (TAT). Ever decreasing defect size targets lead to more sensitive mask inspection across the chip, thus generating too many defects. Hence, more operator time is being spent in analyzing and disposition of defects. Also, the fact that multiple Mask Inspection Systems and Defect Analysis strategies would typically be in use in a Mask Shop or a Wafer Foundry further complicates the situation. In this scenario, there is a need for a versatile, user friendly and extensible Defect Analysis software that reduces operator analysis time and enables correct classification and disposition of mask defects by providing intuitive visual and analysis aids. We propose a new vendor-neutral defect analysis software, NxDAT, based on an open architecture. The open architecture of NxDAT makes it easily extensible to support defect analysis for mask inspection systems from different vendors. The capability to load results from mask inspection systems from different vendors either directly or through a common interface enables the functionality of establishing correlation between inspections carried out by mask inspection systems from different vendors. This capability of NxDAT enhances the effectiveness of defect analysis as it directly addresses the real-life scenario where multiple types of mask inspection systems from different vendors co-exist in mask shops or wafer foundries. The open architecture also potentially enables loading wafer inspection results as well as loading data from other related tools such as Review Tools, Repair Tools, CD-SEM tools etc, and correlating them with the corresponding mask inspection results. A unique concept of Plug-In interface to NxDAT further enhances the openness of the architecture of NxDAT by enabling end-users to add their own proprietary defect analysis and image processing algorithms. The plug-in interface makes it possible for the end-users to make use of their collected knowledge through the years of experience in mask inspection process by encapsulating the knowledge into software utilities and plugging them into NxDAT. The plug-in interface is designed with the intent of enabling the pro-active mask defect analysis teams to build competitive differentiation into their defect analysis process while protecting their knowledge internally within their company. By providing interface with all major standard layout and mask data formats, NxDAT enables correlation of defect data on reticles with design and mask databases, further extending the effectiveness of defect analysis for D2DB inspection. NxDAT also includes many other advanced features for easy and fast navigation, visual display of defects, defect selection, multi-tier classification, defect clustering and gridding, sophisticated CD and contact measurement analysis, repeatability analysis such as adder analysis, defect trend, capture rate etc.

Method for mask repair using defect compensation

DOEpatents

Sweeney, Donald W.; Ray-Chaudhuri, Avijit K.

2001-01-01

A method for repair of amplitude and/or phase defects in lithographic masks. The method involves modifying or altering a portion of the absorber pattern on the surface of the mask blank proximate to the mask defect to compensate for the local disturbance (amplitude or phase) of the optical field due to the defect.

Ion beam deposition system for depositing low defect density extreme ultraviolet mask blanks

NASA Astrophysics Data System (ADS)

Jindal, V.; Kearney, P.; Sohn, J.; Harris-Jones, J.; John, A.; Godwin, M.; Antohe, A.; Teki, R.; Ma, A.; Goodwin, F.; Weaver, A.; Teora, P.

2012-03-01

Extreme ultraviolet lithography (EUVL) is the leading next-generation lithography (NGL) technology to succeed optical lithography at the 22 nm node and beyond. EUVL requires a low defect density reflective mask blank, which is considered to be one of the top two critical technology gaps for commercialization of the technology. At the SEMATECH Mask Blank Development Center (MBDC), research on defect reduction in EUV mask blanks is being pursued using the Veeco Nexus deposition tool. The defect performance of this tool is one of the factors limiting the availability of defect-free EUVL mask blanks. SEMATECH identified the key components in the ion beam deposition system that is currently impeding the reduction of defect density and the yield of EUV mask blanks. SEMATECH's current research is focused on in-house tool components to reduce their contributions to mask blank defects. SEMATECH is also working closely with the supplier to incorporate this learning into a next-generation deposition tool. This paper will describe requirements for the next-generation tool that are essential to realize low defect density EUV mask blanks. The goal of our work is to enable model-based predictions of defect performance and defect improvement for targeted process improvement and component learning to feed into the new deposition tool design. This paper will also highlight the defect reduction resulting from process improvements and the restrictions inherent in the current tool geometry and components that are an impediment to meeting HVM quality EUV mask blanks will be outlined.

Variability-aware double-patterning layout optimization for analog circuits

NASA Astrophysics Data System (ADS)

Li, Yongfu; Perez, Valerio; Tripathi, Vikas; Lee, Zhao Chuan; Tseng, I.-Lun; Ong, Jonathan Yoong Seang

2018-03-01

The semiconductor industry has adopted multi-patterning techniques to manage the delay in the extreme ultraviolet lithography technology. During the design process of double-patterning lithography layout masks, two polygons are assigned to different masks if their spacing is less than the minimum printable spacing. With these additional design constraints, it is very difficult to find experienced layout-design engineers who have a good understanding of the circuit to manually optimize the mask layers in order to minimize color-induced circuit variations. In this work, we investigate the impact of double-patterning lithography on analog circuits and provide quantitative analysis for our designers to select the optimal mask to minimize the circuit's mismatch. To overcome the problem and improve the turn-around time, we proposed our smart "anchoring" placement technique to optimize mask decomposition for analog circuits. We have developed a software prototype that is capable of providing anchoring markers in the layout, allowing industry standard tools to perform automated color decomposition process.

EUVL Mask Blank Repair

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barty, A; Mirkarimi, P; Stearns, D G

2002-05-22

EUV mask blanks are fabricated by depositing a reflective Mo/Si multilayer film onto super-polished substrates. Small defects in this thin film coating can significantly alter the reflected field and introduce defects in the printed image. Ideally one would want to produce defect-free mask blanks; however, this may be very difficult to achieve in practice. One practical way to increase the yield of mask blanks is to effectively repair multilayer defects, and to this effect they present two complementary defect repair strategies for use on multilayer-coated EUVL mask blanks. A defect is any area on the mask which causes unwanted variationsmore » in EUV dose in the aerial image obtained in a printing tool, and defect repair is correspondingly defined as any strategy that renders a defect unprintable during exposure. The term defect mitigation can be adopted to describe any strategy which renders a critical defect non-critical when printed, and in this regard a non-critical defect is one that does not adversely affect device function. Defects in the patterned absorber layer consist of regions where metal, typically chrome, is unintentionally added or removed from the pattern leading to errors in the reflected field. There currently exists a mature technology based on ion beam milling and ion beam assisted deposition for repairing defects in the absorber layer of transmission lithography masks, and it is reasonable to expect that this technology will be extended to the repair of absorber defects in EUVL masks. However, techniques designed for the repair of absorber layers can not be directly applied to the repair of defects in the mask blank, and in particular the multilayer film. In this paper they present for the first time a new technique for the repair of amplitude defects as well as recent results on the repair of phase defects.« less

Understanding and reduction of defects on finished EUV masks

NASA Astrophysics Data System (ADS)

Liang, Ted; Sanchez, Peter; Zhang, Guojing; Shu, Emily; Nagpal, Rajesh; Stivers, Alan

2005-05-01

To reduce the risk of EUV lithography adaptation for the 32nm technology node in 2009, Intel has operated a EUV mask Pilot Line since early 2004. The Pilot Line integrates all the necessary process modules including common tool sets shared with current photomask production as well as EUV specific tools. This integrated endeavor ensures a comprehensive understanding of any issues, and development of solutions for the eventual fabrication of defect-free EUV masks. Two enabling modules for "defect-free" masks are pattern inspection and repair, which have been integrated into the Pilot Line. This is the first time we are able to look at real defects originated from multilayer blanks and patterning process on finished masks over entire mask area. In this paper, we describe our efforts in the qualification of DUV pattern inspection and electron beam mask repair tools for Pilot Line operation, including inspection tool sensitivity, defect classification and characterization, and defect repair. We will discuss the origins of each of the five classes of defects as seen by DUV pattern inspection tool on finished masks, and present solutions of eliminating and mitigating them.

Rigorous diffraction analysis using geometrical theory of diffraction for future mask technology

NASA Astrophysics Data System (ADS)

Chua, Gek S.; Tay, Cho J.; Quan, Chenggen; Lin, Qunying

2004-05-01

Advanced lithographic techniques such as phase shift masks (PSM) and optical proximity correction (OPC) result in a more complex mask design and technology. In contrast to the binary masks, which have only transparent and nontransparent regions, phase shift masks also take into consideration transparent features with a different optical thickness and a modified phase of the transmitted light. PSM are well-known to show prominent diffraction effects, which cannot be described by the assumption of an infinitely thin mask (Kirchhoff approach) that is used in many commercial photolithography simulators. A correct prediction of sidelobe printability, process windows and linearity of OPC masks require the application of rigorous diffraction theory. The problem of aerial image intensity imbalance through focus with alternating Phase Shift Masks (altPSMs) is performed and compared between a time-domain finite-difference (TDFD) algorithm (TEMPEST) and Geometrical theory of diffraction (GTD). Using GTD, with the solution to the canonical problems, we obtained a relationship between the edge on the mask and the disturbance in image space. The main interest is to develop useful formulations that can be readily applied to solve rigorous diffraction for future mask technology. Analysis of rigorous diffraction effects for altPSMs using GTD approach will be discussed.

Improving reticle defect disposition via fully automated lithography simulation

NASA Astrophysics Data System (ADS)

Mann, Raunak; Goodman, Eliot; Lao, Keith; Ha, Steven; Vacca, Anthony; Fiekowsky, Peter; Fiekowsky, Dan

2016-03-01

Most advanced wafer fabs have embraced complex pattern decoration, which creates numerous challenges during in-fab reticle qualification. These optical proximity correction (OPC) techniques create assist features that tend to be very close in size and shape to the main patterns as seen in Figure 1. A small defect on an assist feature will most likely have little or no impact on the fidelity of the wafer image, whereas the same defect on a main feature could significantly decrease device functionality. In order to properly disposition these defects, reticle inspection technicians need an efficient method that automatically separates main from assist features and predicts the resulting defect impact on the wafer image. Analysis System (ADAS) defect simulation system[1]. Up until now, using ADAS simulation was limited to engineers due to the complexity of the settings that need to be manually entered in order to create an accurate result. A single error in entering one of these values can cause erroneous results, therefore full automation is necessary. In this study, we propose a new method where all needed simulation parameters are automatically loaded into ADAS. This is accomplished in two parts. First we have created a scanner parameter database that is automatically identified from mask product and level names. Second, we automatically determine the appropriate simulation printability threshold by using a new reference image (provided by the inspection tool) that contains a known measured value of the reticle critical dimension (CD). This new method automatically loads the correct scanner conditions, sets the appropriate simulation threshold, and automatically measures the percentage of CD change caused by the defect. This streamlines qualification and reduces the number of reticles being put on hold, waiting for engineer review. We also present data showing the consistency and reliability of the new method, along with the impact on the efficiency of in-fab reticle qualification.

Wafer plane inspection for advanced reticle defects

NASA Astrophysics Data System (ADS)

Nagpal, Rajesh; Ghadiali, Firoz; Kim, Jun; Huang, Tracy; Pang, Song

2008-05-01

Readiness of new mask defect inspection technology is one of the key enablers for insertion & transition of the next generation technology from development into production. High volume production in mask shops and wafer fabs demands a reticle inspection system with superior sensitivity complemented by a low false defect rate to ensure fast turnaround of reticle repair and defect disposition (W. Chou et al 2007). Wafer Plane Inspection (WPI) is a novel approach to mask defect inspection, complementing the high resolution inspection capabilities of the TeraScanHR defect inspection system. WPI is accomplished by using the high resolution mask images to construct a physical mask model (D. Pettibone et al 1999). This mask model is then used to create the mask image in the wafer aerial plane. A threshold model is applied to enhance the inspectability of printing defects. WPI can eliminate the mask restrictions imposed on OPC solutions by inspection tool limitations in the past. Historically, minimum image restrictions were required to avoid nuisance inspection stops and/or subsequent loss of sensitivity to defects. WPI has the potential to eliminate these limitations by moving the mask defect inspections to the wafer plane. This paper outlines Wafer Plane Inspection technology, and explores the application of this technology to advanced reticle inspection. A total of twelve representative critical layers were inspected using WPI die-to-die mode. The results from scanning these advanced reticles have shown that applying WPI with a pixel size of 90nm (WPI P90) captures all the defects of interest (DOI) with low false defect detection rates. In validating CD predictions, the delta CDs from WPI are compared against Aerial Imaging Measurement System (AIMS), where a good correlation is established between WPI and AIMSTM.

Genetics Home Reference: supravalvular aortic stenosis

MedlinePlus

... Twitter Home Health Conditions Supravalvular aortic stenosis Supravalvular aortic stenosis Printable PDF Open All Close All Enable Javascript to view the expand/collapse boxes. Description Supravalvular aortic stenosis (SVAS) is a heart defect that develops before ...

Production of EUV mask blanks with low killer defects

NASA Astrophysics Data System (ADS)

Antohe, Alin O.; Kearney, Patrick; Godwin, Milton; He, Long; John Kadaksham, Arun; Goodwin, Frank; Weaver, Al; Hayes, Alan; Trigg, Steve

2014-04-01

For full commercialization, extreme ultraviolet lithography (EUVL) technology requires the availability of EUV mask blanks that are free of defects. This remains one of the main impediments to the implementation of EUV at the 22 nm node and beyond. Consensus is building that a few small defects can be mitigated during mask patterning, but defects over 100 nm (SiO2 equivalent) in size are considered potential "killer" defects or defects large enough that the mask blank would not be usable. The current defect performance of the ion beam sputter deposition (IBD) tool will be discussed and the progress achieved to date in the reduction of large size defects will be summarized, including a description of the main sources of defects and their composition.

Improvement in defect classification efficiency by grouping disposition for reticle inspection

NASA Astrophysics Data System (ADS)

Lai, Rick; Hsu, Luke T. H.; Chang, Peter; Ho, C. H.; Tsai, Frankie; Long, Garrett; Yu, Paul; Miller, John; Hsu, Vincent; Chen, Ellison

2005-11-01

As the lithography design rule of IC manufacturing continues to migrate toward more advanced technology nodes, the mask error enhancement factor (MEEF) increases and necessitates the use of aggressive OPC features. These aggressive OPC features pose challenges to reticle inspection due to high false detection, which is time-consuming for defect classification and impacts the throughput of mask manufacturing. Moreover, higher MEEF leads to stricter mask defect capture criteria so that new generation reticle inspection tool is equipped with better detection capability. Hence, mask process induced defects, which were once undetectable, are now detected and results in the increase of total defect count. Therefore, how to review and characterize reticle defects efficiently is becoming more significant. A new defect review system called ReviewSmart has been developed based on the concept of defect grouping disposition. The review system intelligently bins repeating or similar defects into defect groups and thus allows operators to review massive defects more efficiently. Compared to the conventional defect review method, ReviewSmart not only reduces defect classification time and human judgment error, but also eliminates desensitization that is formerly inevitable. In this study, we attempt to explore the most efficient use of ReviewSmart by evaluating various defect binning conditions. The optimal binning conditions are obtained and have been verified for fidelity qualification through inspection reports (IRs) of production masks. The experiment results help to achieve the best defect classification efficiency when using ReviewSmart in the mask manufacturing and development.

Controlling bridging and pinching with pixel-based mask for inverse lithography

NASA Astrophysics Data System (ADS)

Kobelkov, Sergey; Tritchkov, Alexander; Han, JiWan

2016-03-01

Inverse Lithography Technology (ILT) has become a viable computational lithography candidate in recent years as it can produce mask output that results in process latitude and CD control in the fab that is hard to match with conventional OPC/SRAF insertion approaches. An approach to solving the inverse lithography problem as a nonlinear, constrained minimization problem over a domain mask pixels was suggested in the paper by Y. Granik "Fast pixel-based mask optimization for inverse lithography" in 2006. The present paper extends this method to satisfy bridging and pinching constraints imposed on print contours. Namely, there are suggested objective functions expressing penalty for constraints violations, and their minimization with gradient descent methods is considered. This approach has been tested with an ILT-based Local Printability Enhancement (LPTM) tool in an automated flow to eliminate hotspots that can be present on the full chip after conventional SRAF placement/OPC and has been applied in 14nm, 10nm node production, single and multiple-patterning flows.

Three-dimensional characterization of extreme ultraviolet mask blank defects by interference contrast photoemission electron microscopy.

PubMed

Lin, Jingquan; Weber, Nils; Escher, Matthias; Maul, Jochen; Han, Hak-Seung; Merkel, Michael; Wurm, Stefan; Schönhense, Gerd; Kleineberg, Ulf

2008-09-29

A photoemission electron microscope based on a new contrast mechanism "interference contrast" is applied to characterize extreme ultraviolet lithography mask blank defects. Inspection results show that positioning of interference destructive condition (node of standing wave field) on surface of multilayer in the local region of a phase defect is necessary to obtain best visibility of the defect on mask blank. A comparative experiment reveals superiority of the interference contrast photoemission electron microscope (Extreme UV illumination) over a topographic contrast one (UV illumination with Hg discharge lamp) in detecting extreme ultraviolet mask blank phase defects. A depth-resolved detection of a mask blank defect, either by measuring anti-node peak shift in the EUV-PEEM image under varying inspection wavelength condition or by counting interference fringes with a fixed illumination wavelength, is discussed.

EUV mask defect inspection and defect review strategies for EUV pilot line and high volume manufacturing

NASA Astrophysics Data System (ADS)

Chan, Y. David; Rastegar, Abbas; Yun, Henry; Putna, E. Steve; Wurm, Stefan

2010-04-01

Reducing mask blank and patterned mask defects is the number one challenge for extreme ultraviolet lithography. If the industry succeeds in reducing mask blank defects at the required rate of 10X every year for the next 2-3 years to meet high volume manufacturing defect requirements, new inspection and review tool capabilities will soon be needed to support this goal. This paper outlines the defect inspection and review tool technical requirements and suggests development plans to achieve pilot line readiness in 2011/12 and high volume manufacturing readiness in 2013. The technical specifications, tooling scenarios, and development plans were produced by a SEMATECH-led technical working group with broad industry participation from material suppliers, tool suppliers, mask houses, integrated device manufacturers, and consortia. The paper summarizes this technical working group's assessment of existing blank and mask inspection/review infrastructure capabilities to support pilot line introduction and outlines infrastructure development requirements and tooling strategies to support high volume manufacturing.

Inspection of lithographic mask blanks for defects

DOEpatents

Sommargren, Gary E.

2001-01-01

A visible light method for detecting sub-100 nm size defects on mask blanks used for lithography. By using optical heterodyne techniques, detection of the scattered light can be significantly enhanced as compared to standard intensity detection methods. The invention is useful in the inspection of super-polished surfaces for isolated surface defects or particulate contamination and in the inspection of lithographic mask or reticle blanks for surface defects or bulk defects or for surface particulate contamination.

Ultimate patterning limits for EUV at 5nm node and beyond

NASA Astrophysics Data System (ADS)

Ali, Rehab Kotb; Hamed Fatehy, Ahmed; Lafferty, Neal; Word, James

2018-03-01

The 5nm technology node introduces more aggressive geometries than previous nodes. In this paper, we are introducing a comprehensive study to examine the pattering limits of EUV at 0.33NA. The study is divided into two main approaches: (A) Exploring pattering limits of Single Exposure EUV Cut/Block mask in Self-Aligned-Multi-Patterning (SAMP) process, and (B) Exploring the pattering limits of a Single Exposure EUV printing of metal Layers. The printability of the resulted OPC masks is checked through a model based manufacturing flow for the two pattering approaches. The final manufactured patterns are quantified by Edge Placement Error (EPE), Process Variation Band (PVBand), soft/hard bridging and pinching, Image Log Slope (ILS) and Common Depth of Focus (CDOF)

X-ray mask fabrication advancements at the Microlithographic Mask Development Center

NASA Astrophysics Data System (ADS)

Kimmel, Kurt R.; Hughes, Patrick J.

1996-05-01

The Microlithographic Mask Development Center (MMD) was established as the X-ray mask manufacturing facility at the IBM Microelectronics Division semiconductor fabricator in Essex Junction, Vermont. This center, in operation for over two years, produces high yielding, defect-free X-ray masks for competitive logic and memory products at 250nm groundrules and below. The MMD is a complete mask facility that manufactures silicon membrane mask blanks in the NIST format and finished masks with electroplated gold X-ray absorber. Mask patterning, with dimensions as small as 180 nm, is accomplished using IBM-built variable shaped spot e-beam systems. Masks are routinely inspected and repaired using state-of-the-art equipment: two KLA SEM Specs for defect inspection, a Leica LMS 2000 for image placement characterization, an Amray 2040c for image dimension characterization and a Micrion 8000 XMR for defect repair. This facility maintains a baseline mask process with daily production of 250nm, 32Mb SRAM line monitor masks for the continuous improvement of mask quality and processes. Development masks are produced for several semiconductor manufacturers including IBM, Motorola, Loral, and Sanders. Masks for 64Mb and 256Mb DRAM (IBM) and advanced logic/SRAM (IBM and Motorola) designs have also been delivered. This paper describes the MMD facility and its technical capabilities. Key manufacturing metrics such as mask turnaround time, parametric yield learning and defect reduction activities are highlighted. The challenges associated with improved mask quality, sub-180nm mask fabrication, and the transition to refractory metal absorber are discussed.

Method for growing low defect, high purity crystalline layers utilizing lateral overgrowth of a patterned mask

NASA Technical Reports Server (NTRS)

Morrison, Andrew D. (Inventor); Daud, Taher (Inventor)

1986-01-01

A method for growing a high purity, low defect layer of semiconductor is described. This method involves depositing a patterned mask of a material impervious to impurities of the semiconductor on a surface of a blank. When a layer of semiconductor is grown on the mask, the semiconductor will first grow from the surface portions exposed by the openings in the mask and will bridge the connecting portions of the mask to form a continuous layer having improved purity, since only the portions overlying the openings are exposed to defects and impurities. The process can be iterated and the mask translated to further improve the quality of grown layers.

Automated mask and wafer defect classification using a novel method for generalized CD variation measurements

NASA Astrophysics Data System (ADS)

Verechagin, V.; Kris, R.; Schwarzband, I.; Milstein, A.; Cohen, B.; Shkalim, A.; Levy, S.; Price, D.; Bal, E.

2018-03-01

Over the years, mask and wafers defects dispositioning has become an increasingly challenging and time consuming task. With design rules getting smaller, OPC getting complex and scanner illumination taking on free-form shapes - the probability of a user to perform accurate and repeatable classification of defects detected by mask inspection tools into pass/fail bins is reducing. The critical challenging of mask defect metrology for small nodes ( < 30 nm) was reviewed in [1]. While Critical Dimension (CD) variation measurement is still the method of choice for determining a mask defect future impact on wafer, the high complexity of OPCs combined with high variability in pattern shapes poses a challenge for any automated CD variation measurement method. In this study, a novel approach for measurement generalization is presented. CD variation assessment performance is evaluated on multiple different complex shape patterns, and is benchmarked against an existing qualified measurement methodology.

Method and apparatus for inspecting reflection masks for defects

DOEpatents

Bokor, Jeffrey; Lin, Yun

2003-04-29

An at-wavelength system for extreme ultraviolet lithography mask blank defect detection is provided. When a focused beam of wavelength 13 nm is incident on a defective region of a mask blank, three possible phenomena can occur. The defect will induce an intensity reduction in the specularly reflected beam, scatter incoming photons into an off-specular direction, and change the amplitude and phase of the electric field at the surface which can be monitored through the change in the photoemission current. The magnitude of these changes will depend on the incident beam size, and the nature, extent and size of the defect. Inspection of the mask blank is performed by scanning the mask blank with 13 nm light focused to a spot a few .mu.m in diameter, while measuring the reflected beam intensity (bright field detection), the scattered beam intensity (dark-field detection) and/or the change in the photoemission current.

High-contrast coronagraph performance in the presence of focal plane mask defects

NASA Astrophysics Data System (ADS)

Sidick, Erkin; Shaklan, Stuart; Balasubramanian, Kunjithapatham; Cady, Eric

2014-08-01

We have carried out a study of the performance of high-contrast coronagraphs in the presence of mask defects. We have considered the effects of opaque and dielectric particles of various dimensions, as well as systematic mask fabrication errors and the limitations of material properties in creating dark holes. We employ sequential deformable mirrors to compensate for phase and amplitude errors, and show the limitations of this approach in the presence of coronagraph image-mask defects.

Single closed contact for 0.18-micron photolithography process

NASA Astrophysics Data System (ADS)

Cheung, Cristina; Phan, Khoi A.; Chiu, Robert J.

2000-06-01

With the rapid advances of deep submicron semiconductor technology, identifying defects is converted into a challenge for different modules in the fabrication of chips. Yield engineers often do bitmap on a memory circuit array (SRAM) to identify the failure bits. This is followed by a wafer stripback to look for visual defects at each deprocessed layer for feedback to the Fab. However, to identify the root cause of a problem, Fab engineers must be able to detect similar defects either on the product wafers in process or some short loop test wafers. In the photolithography process, we recognize that the detection of defects is becoming as important as satisfying the critical dimension (CD) of the device. For a multi-level metallization chemically mechanical polish backend process, it is very difficult to detect missing contacts or via at the masking steps due to metal grain roughness, film color variation and/or previous layer defects. Often, photolithography engineer must depend on Photo Cell Monitor (PCM) and short loop experiments for controlling baseline defects and improvement. In this paper, we discuss the findings on the Poly mask PCM and the Contact mask PCM. We present the comparison between the Poly mask and the Contact mask of the I-line Phase Shifted Via mask and DUV mask process for a 0.18 micron process technology. The correlation and the different type of defects between the Contact PCM and the Poly Mask are discussed. The Contact PCM was found to be more sensitive and correlated to contact failure at sort yield better. We also dedicate to study the root cause of a single closed contact hole in the Contact mask short loop experiment for a 0.18 micron process technology. A single closed contact defect was often caused by the developer process, such as bubbles in the line, resist residue left behind, and the rinse mechanism. We also found surfactant solution helps to improve the surface tension of the wafer for the developer process and this prevents/eliminates a single closed contact hole defects. The applications and effects of using different substrates like SiON, different thicknesses of Oxides, and Poly in the Contact Photo Mask is shown. Finally, some defect troubleshooting techniques and the root cause analysis are also discussed.

Defect reduction for semiconductor memory applications using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Ye, Zhengmao; Luo, Kang; Lu, Xiaoming; Fletcher, Brian; Liu, Weijun; Xu, Frank; LaBrake, Dwayne; Resnick, Douglas J.; Sreenivasan, S. V.

2012-07-01

Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the defect specifications of high-end memory devices. Defects occurring during imprinting can generally be broken into two categories; random defects and repeating defects. Examples of random defects include fluid phase imprint defects, such as bubbles, and solid phase imprint defects, such as line collapse. Examples of repeater defects include mask fabrication defects and particle induced defects. Previous studies indicated that soft particles cause nonrepeating defects. Hard particles, on the other hand, can cause either permanent resist plugging or mask damage. In a previous study, two specific defect types were examined; random nonfill defects occurring during the resist filling process and repeater defects caused by interactions with particles on the substrate. We attempted to identify the different types of imprint defect types using a mask with line/space patterns at dimensions as small as 26 nm. An Imprio 500 twenty-wafer per hour development tool was used to study the various defect types. The imprint defect density was reduced nearly four orders of magnitude, down to ˜4/cm2 in a period of two years following the availability of low defect imprint masks at 26-nm half-pitch. This reduction was achieved by identifying the root cause of various defects and then taking the appropriate corrective action.

Color masking of developmental enamel defects: a case series.

PubMed

Torres, C R G; Borges, A B

2015-01-01

Developmental defects involving color alteration of enamel frequently compromise the esthetic appearance of the tooth. The resin infiltration technique represents an alternative treatment for color masking of these lesions and uniformization of tooth color. This technique is considered relatively simple and microinvasive, since only a minimal portion of enamel is removed. This article illustrates the color-masking effect with resin infiltration of fluorosis and traumatic hypomineralization lesions with a case series. The final esthetic outcomes demonstrated the ability of the resin infiltrant to mask the color of white developmental defect lesions, resulting in satisfactory clinical esthetic improvements. However, in more severe cases, the color-masking effect was not complete.

Fabless company mask technology approach: fabless but not fab-careless

NASA Astrophysics Data System (ADS)

Hisamura, Toshiyuki; Wu, Xin

2009-10-01

There are two different foundry-fabless working models in the aspect of mask. Some foundries have in-house mask facility while others contract with merchant mask vendors. Significant progress has been made in both kinds of situations. Xilinx as one of the pioneers of fabless semiconductor companies has been continually working very closely with both merchant mask vendors and mask facilities of foundries in past many years, contributed well in both technology development and benefited from corporations. Our involvement in manufacturing is driven by the following three elements: The first element is to understand the new fabrication and mask technologies and then find a suitable design / layout style to better utilize these new technologies and avoid potential risks. Because Xilinx has always been involved in early stage of advanced technology nodes, this early understanding and adoption is especially important. The second element is time to market. Reduction in mask and wafer manufacturing cycle-time can ensure faster time to market. The third element is quality. Commitment to quality is our highest priority for our customers. We have enough visibility on any manufacturing issues affecting the device functionality. Good correlation has consistently been observed between FPGA speed uniformity and the poly mask Critical Dimension (CD) uniformity performance. To achieve FPGA speed uniformity requirement, the manufacturing process as well as the mask and wafer CD uniformity has to be monitored. Xilinx works closely with the wafer foundries and mask suppliers to improve productivity and the yield from initial development stage of mask making operations. As an example, defect density reduction is one of the biggest challenges for mask supplier in development stage to meet the yield target satisfying the mask cost and mask turn-around-time (TAT) requirement. Historically, masks were considered to be defect free but at these advanced process nodes, that assumption no longer holds true. There is a need to be flexible enough on unrepairable defect at early stage but also a need for efficient risk management system on mask defect waivers. Mask defects are often waived in low design criticality area in favor of scrapping the mask and delaying the mask and wafer schedule. Xilinx's involvement in mask manufacturing has contributed significantly to our success in past many nodes and will continue.

Lithography-based automation in the design of program defect masks

NASA Astrophysics Data System (ADS)

Vakanas, George P.; Munir, Saghir; Tejnil, Edita; Bald, Daniel J.; Nagpal, Rajesh

2004-05-01

In this work, we are reporting on a lithography-based methodology and automation in the design of Program Defect masks (PDM"s). Leading edge technology masks have ever-shrinking primary features and more pronounced model-based secondary features such as optical proximity corrections (OPC), sub-resolution assist features (SRAF"s) and phase-shifted mask (PSM) structures. In order to define defect disposition specifications for critical layers of a technology node, experience alone in deciding worst-case scenarios for the placement of program defects is necessary but may not be sufficient. MEEF calculations initiated from layout pattern data and their integration in a PDM layout flow provide a natural approach for improvements, relevance and accuracy in the placement of programmed defects. This methodology provides closed-loop feedback between layout and hard defect disposition specifications, thereby minimizing engineering test restarts, improving quality and reducing cost of high-end masks. Apart from SEMI and industry standards, best-known methods (BKM"s) in integrated lithographically-based layout methodologies and automation specific to PDM"s are scarce. The contribution of this paper lies in the implementation of Design-For-Test (DFT) principles to a synergistic interaction of CAD Layout and Aerial Image Simulator to drive layout improvements, highlight layout-to-fracture interactions and output accurate program defect placement coordinates to be used by tools in the mask shop.

Actinic defect counting statistics over 1-cm2 area of EUVL mask blank

NASA Astrophysics Data System (ADS)

Jeong, Seongtae; Lai, Chih-wei; Rekawa, Senajith; Walton, Christopher C.; Bokor, Jeffrey

2000-07-01

As a continuation of comparison experiments between EUV inspection and visible inspection of defects on EUVL mask blanks, we report on the result of an experiment where the EUV defect inspection tool is used to perform at-wavelength defect counting over 1 cm2 of EUVL mask blank. Initial EUV inspection found five defects over the scanned area and the subsequent optical scattering inspection was able to detect all of the five defects. Therefore, if there are any defects that are only detectable by EUV inspection, the density is lower than the order of unity per cm2. An upgrade path to substantially increase the overall throughput of the EUV inspection system is also identified in the manuscript.

Patterned mask inspection technology with Projection Electron Microscope (PEM) technique for 11 nm half-pitch (hp) generation EUV masks

NASA Astrophysics Data System (ADS)

Hirano, Ryoichi; Iida, Susumu; Amano, Tsuyoshi; Watanabe, Hidehiro; Hatakeyama, Masahiro; Murakami, Takeshi; Yoshikawa, Shoji; Suematsu, Kenichi; Terao, Kenji

2015-07-01

High-sensitivity EUV mask pattern defect detection is one of the major issues in order to realize the device fabrication by using the EUV lithography. We have already designed a novel Projection Electron Microscope (PEM) optics that has been integrated into a new inspection system named EBEYE-V30 ("Model EBEYE" is an EBARA's model code), and which seems to be quite promising for 16 nm hp generation EUVL Patterned mask Inspection (PI). Defect inspection sensitivity was evaluated by capturing an electron image generated at the mask by focusing onto an image sensor. The progress of the novel PEM optics performance is not only about making an image sensor with higher resolution but also about doing a better image processing to enhance the defect signal. In this paper, we describe the experimental results of EUV patterned mask inspection using the above-mentioned system. The performance of the system is measured in terms of defect detectability for 11 nm hp generation EUV mask. To improve the inspection throughput for 11 nm hp generation defect detection, it would require a data processing rate of greater than 1.5 Giga- Pixel-Per-Second (GPPS) that would realize less than eight hours of inspection time including the step-and-scan motion associated with the process. The aims of the development program are to attain a higher throughput, and enhance the defect detection sensitivity by using an adequate pixel size with sophisticated image processing resulting in a higher processing rate.

Method for characterizing mask defects using image reconstruction from X-ray diffraction patterns

DOEpatents

Hau-Riege, Stefan Peter [Fremont, CA

2007-05-01

The invention applies techniques for image reconstruction from X-ray diffraction patterns on the three-dimensional imaging of defects in EUVL multilayer films. The reconstructed image gives information about the out-of-plane position and the diffraction strength of the defect. The positional information can be used to select the correct defect repair technique. This invention enables the fabrication of defect-free (since repaired) X-ray Mo--Si multilayer mirrors. Repairing Mo--Si multilayer-film defects on mask blanks is a key for the commercial success of EUVL. It is known that particles are added to the Mo--Si multilayer film during the fabrication process. There is a large effort to reduce this contamination, but results are not sufficient, and defects continue to be a major mask yield limiter. All suggested repair strategies need to know the out-of-plane position of the defects in the multilayer.

Defect tolerant transmission lithography mask

DOEpatents

Vernon, Stephen P.

2000-01-01

A transmission lithography mask that utilizes a transparent substrate or a partially transparent membrane as the active region of the mask. A reflective single layer or multilayer coating is deposited on the membrane surface facing the illumination system. The coating is selectively patterned (removed) to form transmissive (bright) regions. Structural imperfections and defects in the coating have negligible effect on the aerial image of the mask master pattern since the coating is used to reflect radiation out of the entrance pupil of the imaging system. Similarly, structural imperfections in the clear regions of the membrane have little influence on the amplitude or phase of the transmitted electromagnetic fields. Since the mask "discards," rather than absorbs, unwanted radiation, it has reduced optical absorption and reduced thermal loading as compared to conventional designs. For EUV applications, the mask circumvents the phase defect problem, and is independent of the thermal load during exposure.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Naulleau, Patrick

With demonstrated resist resolution of 20 nm half pitch, the SEMATECH Berkeley BUV microfield exposure tool continues to push crucial advances in the areas of BUY resists and masks. The ever progressing shrink in computer chip feature sizes has been fueled over the years by a continual reduction in the wavelength of light used to pattern the chips. Recently, this trend has been threatened by unavailability of lens materials suitable for wavelengths shorter than 193 nm. To circumvent this roadblock, a reflective technology utilizing a significantly shorter extreme ultraviolet (EUV) wavelength (13.5 nm) has been under development for the pastmore » decade. The dramatic wavelength shrink was required to compensate for optical design limitations intrinsic in mirror-based systems compared to refractive lens systems. With this significant reduction in wavelength comes a variety of new challenges including developing sources of adequate power, photoresists with suitable resolution, sensitivity, and line-edge roughness characteristics, as well as the fabrication of reflection masks with zero defects. While source development can proceed in the absence of available exposure tools, in order for progress to be made in the areas of resists and masks it is crucial to have access to advanced exposure tools with resolutions equal to or better than that expected from initial production tools. These advanced development tools, however, need not be full field tools. Also, implementing such tools at synchrotron facilities allows them to be developed independent of the availability of reliable stand-alone BUY sources. One such tool is the SEMATECH Berkeley microfield exposure tool (MET). The most unique attribute of the SEMA TECH Berkeley MET is its use of a custom-coherence illuminator made possible by its implementation on a synchrotron beamline. With only conventional illumination and conventional binary masks, the resolution limit of the 0.3-NA optic is approximately 25 nm, however, with EUV not expected in production before the 22-nm half pitch node even finer resolution capabilities are now required from development tools. The SEMATECH Berkeley MET's custom-coherence illuminator allows it to be used with aggressive modified illumination enabling kJ factors as low as 0.25. Noting that the lithographic resolution of an exposure tool is defined as k{sub 1}{lambda}/NA, yielding an ultimate resolution limit of 11 nm. To achieve sub-20-nm aerial-image resolution while avoiding forbidden pitches on Manhattan-geometry features with the centrally-obscured MET optic, a 45-degree oriented dipole pupil fill is used. Figure 1 shows the computed aerial-image contrast as a function of half pitch for a dipole pupil fill optimized to print down to the 19-nm half pitch level. This is achieved with relatively uniform performance at larger dimensions. Using this illumination, printing down to the 20-nm half pitch level has been demonstrated in chemically amplified resists as shown in Fig. 2. The SEMATECH Berkeley MET tool plays a crucial role in the advancement of EUV resists. The unique programmable coherence properties of this tool enable it to achieve higher resolution than other EUV projection tools. As presented here, over the past year the tool has been used to demonstrate resist resolutions of 20 half pitch. Although not discussed here, because the Berkeley MET tool is a true projection lithography tool, it also plays a crucial role in advanced EUV mask research. Examples of the work done in this area include defect printability, mask architecture, and phase shift masks.« less

Defect reduction of high-density full-field patterns in jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Singh, Lovejeet; Luo, Kang; Ye, Zhengmao; Xu, Frank; Haase, Gaddi; Curran, David; LaBrake, Dwayne; Resnick, Douglas; Sreenivasan, S. V.

2011-04-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash Imprint Lithography (J-FIL) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed leaving a patterned resist on the substrate. Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the defect specifications of high end memory devices. Typical defectivity targets are on the order of 0.10/cm2. This work summarizes the results of defect inspections focusing on two key defect types; random non-fill defects occurring during the resist filling process and repeater defects caused by interactions with particles on the substrate. Non-fill defectivity must always be considered within the context of process throughput. The key limiting throughput step in an imprint process is resist filling time. As a result, it is critical to characterize the filling process by measuring non-fill defectivity as a function of fill time. Repeater defects typically have two main sources; mask defects and particle related defects. Previous studies have indicated that soft particles tend to cause non-repeating defects. Hard particles, on the other hand, can cause either resist plugging or mask damage. In this work, an Imprio 500 twenty wafer per hour (wph) development tool was used to study both defect types. By carefully controlling the volume of inkjetted resist, optimizing the drop pattern and controlling the resist fluid front during spreading, fill times of 1.5 seconds were achieved with non-fill defect levels of approximately 1.2/cm2. Longevity runs were used to study repeater defects and a nickel contamination was identified as the key source of particle induced repeater defects.

Reticle decision center: a novel applications platform for enhancing reticle yield and productivity at 10nm technology and beyond

NASA Astrophysics Data System (ADS)

Hwa, George; Bugata, Raj; Chiang, Kaiming; Lakkapragada, Suresh; Tolani, Vikram; Gopalakrishnan, Sandhya; Chen, Chun-Jen; Yang, Chin-Ting; Hsu, Sheng-Chang; Tuo, Laurent

2016-10-01

In the semiconductor IC manufacturing industry, challenges associated with producing defect-free photomasks have been dramatically increasing. At the 10nm technology node, since the 193nm immersion scanner numerical aperture has remained the same 1.35 as in previous nodes, more multi-patterning and aggressive SMO illumination sources are being used to effectively print smaller feature CDs and pitches. To accommodate such specialized sources, more model-based mask OPC and ILT have been used making mask designs very complicated. This in turn makes mask manufacturing very challenging especially for the defect inspection, repair, and metrology processes that need to guarantee defect-free masks. Over the past few years, considerable innovation have been made in the areas of defect inspection and disposition that has ensured continued predictability of mask quality to wafer and final chip yields. The accurate disposition of each mask defect before and after repair has been facilitated by a suite of automated applications such as ADC, LPR, RPG, AIA, etc. that work together with the inspection, repair, and metrology tools and effectively also provide the best possible utilization of the tool capability, capacity and operator resources. In this paper we introduce a new consolidated applications platform called the Reticle Decision Center (RDC) which hosts all these supporting software applications on a centralized server with direct connectivity to mask inspection, repair, metrology tools and more. The paper details how the RDC server is architected to host any application in its native operating system environment and provides for high availability with automatic failover and redundancy. The server along with its host of applications has been tightly integrated with KLA-Tencor's Teron mask inspectors. The paper concludes with showing benefits realized in mask cycle-time and yield as a result of implementing RDC into a high-volume 10nm mask-shop production line.

Defect reduction for semiconductor memory applications using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Ye, Zhengmao; Luo, Kang; Irving, J. W.; Lu, Xiaoming; Zhang, Wei; Fletcher, Brian; Liu, Weijun; Xu, Frank; LaBrake, Dwayne; Resnick, Douglas; Sreenivasan, S. V.

2013-03-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash Imprint Lithography (J-FIL) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed leaving a patterned resist on the substrate. Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the defect specifications of high end memory devices. Typical defectivity targets are on the order of 0.10/cm2. In previous studies, we have focused on defects such as random non-fill defects occurring during the resist filling process and repeater defects caused by interactions with particles on the substrate. In this work, we attempted to identify the critical imprint defect types using a mask with NAND Flash-like patterns at dimensions as small as 26nm. The two key defect types identified were line break defects induced by small particulates and airborne contaminants which result in local adhesion failure. After identification, the root cause of the defect was determined, and corrective measures were taken to either eliminate or reduce the defect source. As a result, we have been able to reduce defectivity levels by more than three orders of magnitude in only 12 months and are now achieving defectivity adders as small as 2 adders per lot of wafers.

Bone regeneration by means of a three-dimensional printed scaffold in a rat cranial defect.

PubMed

Kwon, Doo Yeon; Park, Ji Hoon; Jang, So Hee; Park, Joon Yeong; Jang, Ju Woong; Min, Byoung Hyun; Kim, Wan-Doo; Lee, Hai Bang; Lee, Junhee; Kim, Moon Suk

2018-02-01

Recently, computer-designed three-dimensional (3D) printing techniques have emerged as an active research area with almost unlimited possibilities. In this study, we used a computer-designed 3D scaffold to drive new bone formation in a bone defect. Poly-L-lactide (PLLA) and bioactive β-tricalcium phosphate (TCP) were simply mixed to prepare ink. PLLA + TCP showed good printability from the micronozzle and solidification within few seconds, indicating that it was indeed printable ink for layer-by-layer printing. In the images, TCP on the surface of (and/or inside) PLLA in the printed PLLA + TCP scaffold looked dispersed. MG-63 cells (human osteoblastoma) adhered to and proliferated well on the printed PLLA + TCP scaffold. To assess new bone formation in vivo, the printed PLLA + TCP scaffold was implanted into a full-thickness cranial bone defect in rats. The new bone formation was monitored by microcomputed tomography and histological analysis of the in vivo PLLA + TCP scaffold with or without MG-63 cells. The bone defect was gradually spontaneously replaced with new bone tissues when we used both bioactive TCP and MG-63 cells in the PLLA scaffold. Bone formation driven by the PLLA + TCP30 scaffold with MG-63 cells was significantly greater than that in other experimental groups. Furthermore, the PLLA + TCP scaffold gradually degraded and matched well the extent of the gradual new bone formation on microcomputed tomography. In conclusion, the printed PLLA + TCP scaffold effectively supports new bone formation in a cranial bone defect. Copyright © 2017 John Wiley & Sons, Ltd.

Detecting Submicron Pattern Defects On Optical Photomasks Using An Enhanced El-3 Electron-Beam Lithography Tool

NASA Astrophysics Data System (ADS)

Simpson, R. A.; Davis, D. E.

1982-09-01

This paper describes techniques to detect submicron pattern defects on optical photomasks with an enhanced direct-write, electron-beam lithographic tool. EL-3 is a third generation, shaped spot, electron-beam lithography tool developed by IBM to fabricate semiconductor devices and masks. This tool is being upgraded to provide 100% inspection of optical photomasks for submicron pattern defects, which are subsequently repaired. Fixed-size overlapped spots are stepped over the mask patterns while a signal derived from the back-scattered electrons is monitored to detect pattern defects. Inspection does not require pattern recognition because the inspection scan patterns are derived from the original design data. The inspection spot is square and larger than the minimum defect to be detected, to improve throughput. A new registration technique provides the beam-to-pattern overlay required to locate submicron defects. The 'guard banding" of inspection shapes prevents mask and system tolerances from producing false alarms that would occur should the spots be mispositioned such that they only partially covered a shape being inspected. A rescanning technique eliminates noise-related false alarms and significantly improves throughput. Data is accumulated during inspection and processed offline, as required for defect repair. EL-3 will detect 0.5 um pattern defects at throughputs compatible with mask manufacturing.

Optimizing defect inspection strategy through the use of design-aware database control layers

NASA Astrophysics Data System (ADS)

Stoler, Dvori; Ruch, Wayne; Ma, Weimin; Chakravarty, Swapnajit; Liu, Steven; Morgan, Ray; Valadez, John; Moore, Bill; Burns, John

2007-10-01

Resolution limitations in the mask making process can cause differences between the features that appear in a database and those printed to a reticle. These differences may result from intentional or unintentional features in the database exceeding the resolution limit of the mask making process such as small gaps or lines in the data, line end shortening on small sub-resolution assist features etc creating challenges to both mask writing and mask inspection. Areas with high variance from design to mask, often referred to as high MEEF areas (mask error enhancement factor), become highly problematic and can directly impact mask and device yield, mask manufacturing cycle time and ultimately mask costs. Specific to mask inspection it may be desirable to inspect certain non-critical or non-relevant features at reduced sensitivity so as not to detect real, but less significant process defects. In contrast there may also be times where increased sensitivity is required for critical mask features or areas. Until recently, this process was extremely manual, creating added time and cost to the mask inspection cycle. Shifting to more intelligent and automated inspection flows is the key focus of this paper. A novel approach to importing design data directly into the mask inspection to include both MDP generated MRC errors files and LRC generated MEEF files. The results of recently developed inspection and review capability based upon controlling defect inspection using design aware data base control layers on a pixel basis are discussed. Typical mask shop applications and implementations will be shown.

Coatings on reflective mask substrates

DOEpatents

Tong, William Man-Wai; Taylor, John S.; Hector, Scott D.; Mangat, Pawitter J. S.; Stivers, Alan R.; Kofron, Patrick G.; Thompson, Matthew A.

2002-01-01

A process for creating a mask substrate involving depositing: 1) a coating on one or both sides of a low thermal expansion material EUVL mask substrate to improve defect inspection, surface finishing, and defect levels; and 2) a high dielectric coating, on the backside to facilitate electrostatic chucking and to correct for any bowing caused by the stress imbalance imparted by either other deposited coatings or the multilayer coating of the mask substrate. An film, such as TaSi, may be deposited on the front side and/or back of the low thermal expansion material before the material coating to balance the stress. The low thermal expansion material with a silicon overlayer and a silicon and/or other conductive underlayer enables improved defect inspection and stress balancing.

Performance of repaired defects and attPSM in EUV multilayer masks

NASA Astrophysics Data System (ADS)

Deng, Yunfei; La Fontaine, Bruno; Neureuther, Andrew R.

2002-12-01

The imaging performance of non-planar topographies in EUV masks for both partially repaired defects and non-planar attenuating phase-shifting masks made with repair treatments are evaluated using rigorous electromagnetic simulation with TEMPEST. Typical topographies produced by treatment techniques in the literature such as removal of top layers and compaction produced by electron-beam heating are considered. Isolated defects on/near the surface repaired by material removal are shown to result in an image intensity within 5% of the clear field value. Deeply buried defects within the multilayer treated by electron-beam heating can be repaired to 3% of the clear field but over repair can result in some degradation. Compaction from a 6.938 nm period to a 6.312 nm period shows a 540° phase-shift and an intensity reduced to about 6% suggesting such a treatment may be used to create attenuated phase-shifting masks for EUV. The quality of the aerial image for such a mask is studied as a function of the lateral transition distance between treated and untreated regions.

Progress on EUV mask fabrication for 32-nm technology node and beyond

NASA Astrophysics Data System (ADS)

Zhang, Guojing; Yan, Pei-Yang; Liang, Ted; Park, Seh-jin; Sanchez, Peter; Shu, Emily Y.; Ultanir, Erdem A.; Henrichs, Sven; Stivers, Alan; Vandentop, Gilroy; Lieberman, Barry; Qu, Ping

2007-05-01

Extreme ultraviolet lithography (EUVL) tool development achieved a big milestone last year as two full-field Alpha Demo Tools (ADT) were shipped to customers by ASML. In the future horizon, a full field "EUV1" exposure tool from Nikon will be available by the end of 20071 and the pre-production EUV exposure tools from ASML are targeted for 20092. It is essential that high quality EUVL masks can be made and delivered to the EUVL tool users to support the technology development. In the past year, we have demonstrated mask fabrication with low stress absorber deposition and good etch process control yielding a vertical etch profile and a mask CD control of 5.7 nm for 32 nm (1x) space and 7.4 nm for 32 nm (1x) lines. Mask pattern resolution of 15 nm (1x) dense lines was achieved. Full field reflective mask die-to-die inspection at a 125nm pixel size was demonstrated after low defect multilayer blanks became available. In this paper, we will present details of the Intel EUVL Mask Pilot Line progress in EUVL mask defect reduction, pattern CD performance, program defect mask design and inspection, in-house absorber film development and its performance, and EUVL metrology tool development. We will demonstrate an overall improvement in EUV mask manufacturing readiness due to our Pilot Line activities.

Magnetron sputtering for the production of EUV mask blanks

NASA Astrophysics Data System (ADS)

Kearney, Patrick; Ngai, Tat; Karumuri, Anil; Yum, Jung; Lee, Hojune; Gilmer, David; Vo, Tuan; Goodwin, Frank

2015-03-01

Ion Beam Deposition (IBD) has been the primary technique used to deposit EUV mask blanks since 1995 when it was discovered it could produce multilayers with few defects. Since that time the IBD technique has been extensively studied and improved and is finally approaching usable defectivities. But in the intervening years, the defectivity of magnetron sputtering has been greatly improved. This paper evaluates the suitability of a modern magnetron tool to produce EUV mask blanks and the ability to support HVM production. In particular we show that the reflectivity and uniformity of these tools are superior to current generation IBD tools, and that the magnetron tools can produce EUV films with defect densities comparable to recent best IBD tool performance. Magnetron tools also offer many advantages in manufacturability and tool throughput; however, challenges remain, including transitioning the magnetron tools from the wafer to mask formats. While work continues on quantifying the capability of magnetron sputtering to meet the mask blank demands of the industry, for the most part the remaining challenges do not require any fundamental improvements to existing technology. Based on the recent results and the data presented in this paper there is a clear indication that magnetron deposition should be considered for the future of EUV mask blank production.

Extreme ultraviolet patterned mask inspection performance of advanced projection electron microscope system for 11nm half-pitch generation

NASA Astrophysics Data System (ADS)

Hirano, Ryoichi; Iida, Susumu; Amano, Tsuyoshi; Watanabe, Hidehiro; Hatakeyama, Masahiro; Murakami, Takeshi; Suematsu, Kenichi; Terao, Kenji

2016-03-01

Novel projection electron microscope optics have been developed and integrated into a new inspection system named EBEYE-V30 ("Model EBEYE" is an EBARA's model code) , and the resulting system shows promise for application to half-pitch (hp) 16-nm node extreme ultraviolet lithography (EUVL) patterned mask inspection. To improve the system's inspection throughput for 11-nm hp generation defect detection, a new electron-sensitive area image sensor with a high-speed data processing unit, a bright and stable electron source, and an image capture area deflector that operates simultaneously with the mask scanning motion have been developed. A learning system has been used for the mask inspection tool to meet the requirements of hp 11-nm node EUV patterned mask inspection. Defects are identified by the projection electron microscope system using the "defectivity" from the characteristics of the acquired image. The learning system has been developed to reduce the labor and costs associated with adjustment of the detection capability to cope with newly-defined mask defects. We describe the integration of the developed elements into the inspection tool and the verification of the designed specification. We have also verified the effectiveness of the learning system, which shows enhanced detection capability for the hp 11-nm node.

Phase measurements of EUV mask defects

DOE PAGES

Claus, Rene A.; Wang, Yow-Gwo; Wojdyla, Antoine; ...

2015-02-22

Extreme Ultraviolet (EUV) Lithography mask defects were examined on the actinic mask imaging system, SHARP, at Lawrence Berkeley National Laboratory. Also, a quantitative phase retrieval algorithm based on the Weak Object Transfer Function was applied to the measured through-focus aerial images to examine the amplitude and phase of the defects. The accuracy of the algorithm was demonstrated by comparing the results of measurements using a phase contrast zone plate and a standard zone plate. Using partially coherent illumination to measure frequencies that would otherwise fall outside the numerical aperture (NA), it was shown that some defects are smaller than themore » conventional resolution of the microscope. We found that the programmed defects of various sizes were measured and shown to have both an amplitude and a phase component that the algorithm is able to recover.« less

Actinic inspection of EUV reticles with arbitrary pattern design

NASA Astrophysics Data System (ADS)

Mochi, Iacopo; Helfenstein, Patrick; Rajeev, Rajendran; Fernandez, Sara; Kazazis, Dimitrios; Yoshitake, Shusuke; Ekinci, Yasin

2017-10-01

The re ective-mode EUV mask scanning lensless imaging microscope (RESCAN) is being developed to provide actinic mask inspection capabilities for defects and patterns with high resolution and high throughput, for 7 nm node and beyond. Here we, will report on our progress and present the results on programmed defect detection on random, logic-like patterns. The defects we investigated range from 200 nm to 50 nm size on the mask. We demonstrated the ability of RESCAN to detect these defects in die-to-die and die-to-database mode with a high signal to noise ratio. We also describe future plans for the upgrades to increase the resolution, the sensitivity, and the inspection speed of the demo tool.

Printing soft matter in three dimensions.

PubMed

Truby, Ryan L; Lewis, Jennifer A

2016-12-14

Light- and ink-based three-dimensional (3D) printing methods allow the rapid design and fabrication of materials without the need for expensive tooling, dies or lithographic masks. They have led to an era of manufacturing in which computers can control the fabrication of soft matter that has tunable mechanical, electrical and other functional properties. The expanding range of printable materials, coupled with the ability to programmably control their composition and architecture across various length scales, is driving innovation in myriad applications. This is illustrated by examples of biologically inspired composites, shape-morphing systems, soft sensors and robotics that only additive manufacturing can produce.

Printing soft matter in three dimensions

NASA Astrophysics Data System (ADS)

Truby, Ryan L.; Lewis, Jennifer A.

2016-12-01

Light- and ink-based three-dimensional (3D) printing methods allow the rapid design and fabrication of materials without the need for expensive tooling, dies or lithographic masks. They have led to an era of manufacturing in which computers can control the fabrication of soft matter that has tunable mechanical, electrical and other functional properties. The expanding range of printable materials, coupled with the ability to programmably control their composition and architecture across various length scales, is driving innovation in myriad applications. This is illustrated by examples of biologically inspired composites, shape-morphing systems, soft sensors and robotics that only additive manufacturing can produce.

Advanced EUV mask and imaging modeling

NASA Astrophysics Data System (ADS)

Evanschitzky, Peter; Erdmann, Andreas

2017-10-01

The exploration and optimization of image formation in partially coherent EUV projection systems with complex source shapes requires flexible, accurate, and efficient simulation models. This paper reviews advanced mask diffraction and imaging models for the highly accurate and fast simulation of EUV lithography systems, addressing important aspects of the current technical developments. The simulation of light diffraction from the mask employs an extended rigorous coupled wave analysis (RCWA) approach, which is optimized for EUV applications. In order to be able to deal with current EUV simulation requirements, several additional models are included in the extended RCWA approach: a field decomposition and a field stitching technique enable the simulation of larger complex structured mask areas. An EUV multilayer defect model including a database approach makes the fast and fully rigorous defect simulation and defect repair simulation possible. A hybrid mask simulation approach combining real and ideal mask parts allows the detailed investigation of the origin of different mask 3-D effects. The image computation is done with a fully vectorial Abbe-based approach. Arbitrary illumination and polarization schemes and adapted rigorous mask simulations guarantee a high accuracy. A fully vectorial sampling-free description of the pupil with Zernikes and Jones pupils and an optimized representation of the diffraction spectrum enable the computation of high-resolution images with high accuracy and short simulation times. A new pellicle model supports the simulation of arbitrary membrane stacks, pellicle distortions, and particles/defects on top of the pellicle. Finally, an extension for highly accurate anamorphic imaging simulations is included. The application of the models is demonstrated by typical use cases.

Electron-beam Induced Processes and their Applicability to Mask Repair

NASA Astrophysics Data System (ADS)

Boegli, Volker A.; Koops, Hans W. P.; Budach, Michael; Edinger, Klaus; Hoinkis, Ottmar; Weyrauch, Bernd; Becker, Rainer; Schmidt, Rudolf; Kaya, Alexander; Reinhardt, Andreas; Braeuer, Stephan; Honold, Heinz; Bihr, Johannes; Greiser, Jens; Eisenmann, Michael

2002-12-01

The applicability of electron-beam induced chemical reactions to mask repair is investigated. To achieve deposition and chemical etching with a focused electron-beam system, it is required to disperse chemicals in a molecular beam to the area of interest with a well-defined amount of molecules and monolayers per second. For repair of opaque defects the precursor gas reacts with the absorber material of the mask and forms a volatile reaction product, which leaves the surface. In this way the surface atoms are removed layer by layer. For clear defect repair, additional material, which is light absorbing in the UV, is deposited onto the defect area. This material is rendered as a nanocrystalline deposit from metal containing precursors. An experimental electron-beam mask repair system is developed and used to perform exploratory work applicable to photo mask, EUV mask, EPL and LEEPL stencil mask repair. The tool is described and specific repair actions are demonstrated. Platinum deposited features with lateral dimensions down to 20 nm demonstrate the high resolution obtainable with electron beam induced processes, while AFM and AIMS measurements indicate, that specifications for mask repair at the 70 nm device node can be met. In addition, examples of etching quartz and TaN are given.

Low surface energy polymeric release coating for improved contact print lithography

NASA Astrophysics Data System (ADS)

Mancini, David P.; Resnick, Douglas J.; Gehoski, Kathleen A.; Popovich, Laura L.; Chang, Daniel

2002-03-01

Contact printing has been used for decades in many various lithography applications in the microelectronic industry. While vacuum contact printing processes offer sub-micron resolution and high throughput, they often suffer from some important drawbacks. One of the most common problems is degradation in both resolution and defect density which occurs when the same mask si used for multiple exposures without frequent mask cleans. This is largely due to the relatively high surface energy of both quartz and chrome and the tendency of most photoresists to adhere to these surfaces. As a result, when a mask and wafer are pressed into intimate contact, resist will tend to stick to the mask creating a defect on the wafer, effectively propagating defects to subsequent wafers. In this study, DuPont Teflon AF 1601S is used as a photomask coating and evaluated for its ability to act as a release agent and reduce defects while maintaining resolution for multiple exposures. Teflon AF is an amorphous, transparent, low surface energy, polymeric material that can be spin coated into a thin conformal film. Tests have shown that when using an uncoated mask in vacuum contact, resolution of 0.75 micrometers dense lines is severely degraded after less than 10 consecutive exposures. However, when the mask is coated, 0.75 micrometers dense lines were successfully resolved using vacuum contact for over 200 exposures without cleaning. In addition, it has been demonstrated that Teflon AF coatings impart to a mask a self-cleaning capability, since particles tend to stick to the photoresist rather than the mask. A coated mask, which was purposefully contaminated with particulates, resolved 0.75 micrometers dense lines on all but the first wafer of a series of 25 consecutive exposures. The patented mask releases layer process has successfully been demonstrated with a positive novolak resist. Additional data which describes the system chemistry, dilution and coating process, and film morphology are also presented.

Optimal mask characterization by Surrogate Wafer Print (SWaP) method

NASA Astrophysics Data System (ADS)

Kimmel, Kurt R.; Hoellein, Ingo; Peters, Jan Hendrick; Ackmann, Paul; Connolly, Brid; West, Craig

2008-10-01

Traditionally, definition of mask specifications is done completely by the mask user, while characterization of the mask relative to the specifications is done completely by the mask maker. As the challenges of low-k1 imaging continue to grow in scope of designs and in absolute complexity, the inevitable partnership between wafer lithographers and mask makers has strengthened as well. This is reflected in the jointly owned mask facilities and device manufacturers' continued maintenance of fully captive mask shops which foster the closer mask-litho relationships. However, while some device manufacturers have leveraged this to optimize mask specifications before the mask is built and, therefore, improve mask yield and cost, the opportunity for post-fabrication partnering on mask characterization is more apparent and compelling. The Advanced Mask Technology Center (AMTC) has been investigating the concept of assessing how a mask images, rather than the mask's physical attributes, as a technically superior and lower-cost method to characterize a mask. The idea of printing a mask under its intended imaging conditions, then characterizing the imaged wafer as a surrogate for traditional mask inspections and measurements represents the ultimate method to characterize a mask's performance, which is most meaningful to the user. Surrogate wafer print (SWaP) is already done as part of leading-edge wafer fab mask qualification to validate defect and dimensional performance. In the past, the prospect of executing this concept has generally been summarily discarded as technically untenable and logistically intractable. The AMTC published a paper at BACUS 2007 successfully demonstrating the performance of SWaP for the characterization of defects as an alternative to traditional mask inspection [1]. It showed that this concept is not only feasible, but, in some cases, desirable. This paper expands on last year's work at AMTC to assess the full implementation of SWaP as an enhancement to mask characterization quality including defectivity, dimensional control, pattern fidelity, and in-plane distortion. We present a thorough analysis of both the technical and logistical challenges coupled with an objective view of the advantages and disadvantages from both the technical and financial perspectives. The analysis and model used by the AMTC will serve to provoke other mask shops to prepare their own analyses then consider this new paradigm for mask characterization and qualification.

Double exposure technique for 45nm node and beyond

NASA Astrophysics Data System (ADS)

Hsu, Stephen; Park, Jungchul; Van Den Broeke, Douglas; Chen, J. Fung

2005-11-01

The technical challenges in using F2 lithography for the 45nm node, along with the insurmountable difficulties in EUV lithography, has driven the semiconductor chipmaker into the low k1 lithography era under the pressure of ever decreasing feature sizes. Extending lithography towards lower k1 puts heavy demand on the resolution enhancement technique (RET), exposure tool, and the need for litho friendly design. Hyper numerical aperture (NA) exposure tools, immersion, and double exposure techniques (DET's) are the promising methods to extend lithography manufacturing to the 45nm node at k1 factors below 0.3. Scattering bars (SB's) have become an integral part of the lithography process as chipmakers move to production at ever lower k1 factors. To achieve better critical dimension (CD) control, polarization is applied to enhance the image contrast in the preferential imaging orientation, which increases the risk of SB printability. The optimum SB width is approximately (0.20 ~ 0.25)*(λ/NA). When the SB width becomes less than the exposure wavelength on the 4X mask, Kirchhoff's scalar theory under predicts the SB intensity. The optical weighting factor of the SB increases (Figure 1b) and the SB's become more susceptible to printing. Meanwhile, under hyper NA conditions, the effectiveness of "subresolution" SB's is significantly diminished. A full-sized scattering bars (FSB) scheme becomes necessary. Double exposure methods, such as using ternary 6% attenuated PSM (attPSM) for DDL, are good imaging solutions that can reach and likely go beyond the 45nm node. Today DDL, using binary chrome masks, is capable of printing 65 nm device patterns. In this work, we investigate the use of DET with 6% attPSM masks to target 45nm node device. The SB scalability and printability issues can be taken cared of by using "mutual trimming", i.e., with the combined energy from the two exposures. In this study, we share our findings of using DET to pattern a 45nm node device design with polarization and immersion. We also explore other double patterning methods which in addition to having two exposures, incorporates double coat/developing/etch processing to break the 0.25 k1 barrier.

Defect printability for high-exposure dose advanced packaging applications

NASA Astrophysics Data System (ADS)

Mikles, Max; Flack, Warren; Nguyen, Ha-Ai; Schurz, Dan

2003-12-01

Pellicles are used in semiconductor lithography to minimize printable defects and reduce reticle cleaning frequency. However, there are a growing number of microlithography applications, such as advanced packaging and nanotechnology, where it is not clear that pellicles always offer a significant benefit. These applications have relatively large critical dimensions and require ultra thick photoresists with extremely high exposure doses. Given that the lithography is performed in Class 100 cleanroom conditions, it is possible that the risk of defects from contamination is sufficiently low that pellicles would not be required on certain process layer reticles. The elimination of the pellicle requirement would provide a cost reduction by saving the original pellicle cost and eliminating future pellicle replacement and repair costs. This study examines the imaging potential of defects with reticle patterns and processes typical for gold-bump and solder-bump advanced packaging lithography. The test reticle consists of 30 to 90 μm octagonal contact patterns representative of advanced packaging reticles. Programmed defects are added that represent the range of particle sizes (3 to 30 μm) normally protected by the pellicle and that are typical of advanced packaging lithography cleanrooms. The reticle is exposed using an Ultratech Saturn Spectrum 300e2 1X stepper on wafers coated with a variety of ultra thick (30 to 100 μm) positive and negative-acting photoresists commonly used in advanced packaging. The experimental results show that in many cases smaller particles continue to be yield issues for the feature size and density typical of advanced packaging processes. For the two negative photoresists studied it appears that a pellicle is not required for protection from defects smaller than 10 to 15 μm depending on the photoresist thickness. Thus the decision on pellicle usage for these materials would need to be made based on the device fabrication process and the cleanliness of a fabrication facility. For the two positive photoresists studied it appears that a pellicle is required to protect from defects down to 3 μm defects depending on the photoresist thickness. This suggests that a pellicle should always be used for these materials. Since a typical fabrication facility would use both positive and negative photoresists it may be advantageous to use pellicles on all reticles simply to avoid confusion. The cost savings of not using a pellicle could easily be outweighed by the yield benefits of using one.

Inspection of imprint lithography patterns for semiconductor and patterned media

NASA Astrophysics Data System (ADS)

Resnick, Douglas J.; Haase, Gaddi; Singh, Lovejeet; Curran, David; Schmid, Gerard M.; Luo, Kang; Brooks, Cindy; Selinidis, Kosta; Fretwell, John; Sreenivasan, S. V.

2010-03-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the requirements of cost-effective device production. This work summarizes the results of defect inspections of semiconductor masks, wafers and hard disks patterned using Jet and Flash Imprint Lithography (J-FILTM). Inspections were performed with optical and e-beam based automated inspection tools. For the semiconductor market, a test mask was designed which included dense features (with half pitches ranging between 32 nm and 48 nm) containing an extensive array of programmed defects. For this work, both e-beam inspection and optical inspection were used to detect both random defects and the programmed defects. Analytical SEMs were then used to review the defects detected by the inspection. Defect trends over the course of many wafers were observed with another test mask using a KLA-T 2132 optical inspection tool. The primary source of defects over 2000 imprints were particle related. For the hard drive market, it is important to understand the defectivity of both the template and the imprinted disk. This work presents a methodology for automated pattern inspection and defect classification for imprint-patterned media. Candela CS20 and 6120 tools from KLA-Tencor map the optical properties of the disk surface, producing highresolution grayscale images of surface reflectivity, scattered light, phase shift, etc. Defects that have been identified in this manner are further characterized according to the morphology

A novel approach: high resolution inspection with wafer plane defect detection

NASA Astrophysics Data System (ADS)

Hess, Carl; Wihl, Mark; Shi, Rui-fang; Xiong, Yalin; Pang, Song

2008-05-01

High Resolution reticle inspection is well-established as a proven, effective, and efficient means of detecting yield-limiting mask defects as well as defects which are not immediately yield-limiting yet can enable manufacturing process improvements. Historically, RAPID products have enabled detection of both classes of these defects. The newly-developed Wafer Plane Inspection (WPI) detector technology meets the needs of some advanced mask manufacturers to identify the lithographically-significant defects while ignoring the other non-lithographically-significant defects. Wafer Plane Inspection accomplishes this goal by performing defect detection based on a modeled image of how the mask features would actually print in the photoresist. This has the effect of reducing sensitivity to non-printing defects while enabling higher sensitivity focused in high MEEF areas where small reticle defects still yield significant printing defects on wafers. WPI is a new inspection mode that has been developed by KLA-Tencor and is currently under test with multiple customers. It employs the same transmitted and reflected-light high-resolution images as the industry-standard high-resolution inspections, but with much more sophisticated processing involved. A rigorous mask pattern recovery algorithm is used to convert the transmitted and reflected light images into a modeled representation of the reticle. Lithographic modeling of the scanner is then used to generate an aerial image of the mask. This is followed by resist modeling to determine the exposure of the photoresist. The defect detectors are then applied on this photoresist plane so that only printing defects are detected. Note that no hardware modifications to the inspection system are required to enable this detector. The same tool will be able to perform both our standard High Resolution inspections and the Wafer Plane Inspection detector. This approach has several important features. The ability to ignore non-printing defects and to apply additional effective sensitivity in high MEEF areas enables advanced node development. In addition, the modeling allows the inclusion of important polarization effects that occur in the resist for high NA operation. This allows for the results to better match wafer print results compared to alternate approaches. Finally, the simulation easily allows for the application of arbitrary illumination profiles. With this approach, users of WPI can make use of unique or custom scanner illumination profiles. This allows the more precise modeling of profiles without inspection system hardware modification or loss of company intellectual property. This paper examines WPI in Die:Die mode. Future work includes a review of Die:Database WPI capability.

Automated evaluation of AIMS images: an approach to minimize evaluation variability

NASA Astrophysics Data System (ADS)

Dürr, Arndt C.; Arndt, Martin; Fiebig, Jan; Weiss, Samuel

2006-05-01

Defect disposition and qualification with stepper simulating AIMS tools on advanced masks of the 90nm node and below is key to match the customer's expectations for "defect free" masks, i.e. masks containing only non-printing design variations. The recently available AIMS tools allow for a large degree of automated measurements enhancing the throughput of masks and hence reducing cycle time - up to 50 images can be recorded per hour. However, this amount of data still has to be evaluated by hand which is not only time-consuming but also error prone and exhibits a variability depending on the person doing the evaluation which adds to the tool intrinsic variability and decreases the reliability of the evaluation. In this paper we present the results of an MatLAB based algorithm which automatically evaluates AIMS images. We investigate its capabilities regarding throughput, reliability and matching with handmade evaluation for a large variety of dark and clear defects and discuss the limitations of an automated AIMS evaluation algorithm.

Optical inspection of NGL masks

NASA Astrophysics Data System (ADS)

Pettibone, Donald W.; Stokowski, Stanley E.

2004-12-01

For the last five years KLA-Tencor and our joint venture partners have pursued a research program studying the ability of optical inspection tools to meet the inspection needs of possible NGL lithographies. The NGL technologies that we have studied include SCALPEL, PREVAIL, EUV lithography, and Step and Flash Imprint Lithography. We will discuss the sensitivity of the inspection tools and mask design factors that affect tool sensitivity. Most of the work has been directed towards EUV mask inspection and how to optimize the mask to facilitate inspection. Our partners have succeeded in making high contrast EUV masks ranging in contrast from 70% to 98%. Die to die and die to database inspection of EUV masks have been achieved with a sensitivity that is comparable to what can be achieved with conventional photomasks, approximately 80nm defect sensitivity. We have inspected SCALPEL masks successfully. We have found a limitation of optical inspection when applied to PREVAIL stencil masks. We have run inspections on SFIL masks in die to die, reflected light, in an effort to provide feedback to improve the masks. We have used a UV inspection system to inspect both unpatterned EUV substrates (no coatings) and blanks (with EUV multilayer coatings). These inspection results have proven useful in driving down the substrate and blank defect levels.

Photomask quality evaluation using lithography simulation and multi-detector MVM-SEM

NASA Astrophysics Data System (ADS)

Ito, Keisuke; Murakawa, Tsutomu; Fukuda, Naoki; Shida, Soichi; Iwai, Toshimichi; Matsumoto, Jun; Nakamura, Takayuki; Matsushita, Shohei; Hagiwara, Kazuyuki; Hara, Daisuke

2013-06-01

The detection and management of mask defects which are transferred onto wafer becomes more important day by day. As the photomask patterns becomes smaller and more complicated, using Inverse Lithography Technology (ILT) and Source Mask Optimization (SMO) with Optical Proximity Correction (OPC). To evaluate photomask quality, the current method uses aerial imaging by optical inspection tools. This technique at 1Xnm node has a resolution limit because small defects will be difficult to detect. We already reported the MEEF influence of high-end photomask using wide FOV SEM contour data of "E3630 MVM-SEM®" and lithography simulator "TrueMask® DS" of D2S Inc. in the prior paper [1]. In this paper we evaluate the correlation between our evaluation method and optical inspection tools as ongoing assessment. Also in order to reduce the defect classification work, we can compose the 3 Dimensional (3D) information of defects and can judge whether repairs of defects would be required. Moreover, we confirm the possibility of wafer plane CD measurement based on the combination between E3630 MVM-SEM® and 3D lithography simulation.

Accurate defect die placement and nuisance defect reduction for reticle die-to-die inspections

NASA Astrophysics Data System (ADS)

Wen, Vincent; Huang, L. R.; Lin, C. J.; Tseng, Y. N.; Huang, W. H.; Tuo, Laurent C.; Wylie, Mark; Chen, Ellison; Wang, Elvik; Glasser, Joshua; Kelkar, Amrish; Wu, David

2015-10-01

Die-to-die reticle inspections are among the simplest and most sensitive reticle inspections because of the use of an identical-design neighboring-die for the reference image. However, this inspection mode can have two key disadvantages: (1) The location of the defect is indeterminate because it is unclear to the inspector whether the test or reference image is defective; and (2) nuisance and false defects from mask manufacturing noise and tool optical variation can limit the usable sensitivity. The use of a new sequencing approach for a die-to-die inspection can resolve these issues without any additional scan time, without sacrifice in sensitivity requirement, and with a manageable increase in computation load. In this paper we explore another approach for die-to-die inspections using a new method of defect processing and sequencing. Utilizing die-to-die double arbitration during defect detection has been proven through extensive testing to generate accurate placement of the defect in the correct die to ensure efficient defect disposition at the AIMS step. The use of this method maintained the required inspection sensitivity for mask quality as verified with programmed-defectmask qualification and then further validated with production masks comparing the current inspection approach to the new method. Furthermore, this approach can significantly reduce the total number of defects that need to be reviewed by essentially eliminating the nuisance and false defects that can result from a die-to-die inspection. This "double-win" will significantly reduce the effort in classifying a die-to-die inspection result and will lead to improved cycle times.

Context-based automated defect classification system using multiple morphological masks

DOEpatents

Gleason, Shaun S.; Hunt, Martin A.; Sari-Sarraf, Hamed

2002-01-01

Automatic detection of defects during the fabrication of semiconductor wafers is largely automated, but the classification of those defects is still performed manually by technicians. This invention includes novel digital image analysis techniques that generate unique feature vector descriptions of semiconductor defects as well as classifiers that use these descriptions to automatically categorize the defects into one of a set of pre-defined classes. Feature extraction techniques based on multiple-focus images, multiple-defect mask images, and segmented semiconductor wafer images are used to create unique feature-based descriptions of the semiconductor defects. These feature-based defect descriptions are subsequently classified by a defect classifier into categories that depend on defect characteristics and defect contextual information, that is, the semiconductor process layer(s) with which the defect comes in contact. At the heart of the system is a knowledge database that stores and distributes historical semiconductor wafer and defect data to guide the feature extraction and classification processes. In summary, this invention takes as its input a set of images containing semiconductor defect information, and generates as its output a classification for the defect that describes not only the defect itself, but also the location of that defect with respect to the semiconductor process layers.

Nanoimprint system development and status for high volume semiconductor manufacturing

NASA Astrophysics Data System (ADS)

Hiura, Hiromi; Takabayashi, Yukio; Takashima, Tsuneo; Emoto, Keiji; Choi, Jin; Schumaker, Phil

2016-10-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash Imprint Lithography* (J-FIL*) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. There are many criteria that determine whether a particular technology is ready for wafer manufacturing. For imprint lithography, recent attention has been given to the areas of overlay, throughput, defectivity, and mask replication. This paper reviews progress in these critical areas. Recent demonstrations have proven that mix and match overlay of less than 5nm can achieved. Further reductions require a higher order correction system. Modeling and experimental data are presented which provide a path towards reducing the overlay errors to less than 3nm. Throughput is mainly impacted by the fill time of the relief images on the mask. Improvement in resist materials provides a solution that allows 15 wafers per hour per station, or a tool throughput of 60 wafers per hour. Defectivity and mask life play a significant role relative to meeting the cost of ownership (CoO) requirements in the production of semiconductor devices. Hard particles on a wafer or mask create the possibility of inducing a permanent defect on the mask that can impact device yield and mask life. By using material methods to reduce particle shedding and by introducing an air curtain system, the lifetime of both the master mask and the replica mask can be extended. In this work, we report results that demonstrate a path towards achieving mask lifetimes of better than 1000 wafers. Finally, on the mask side, a new replication tool, the FPA-1100NR2 is introduced. Mask replication is required for nanoimprint lithography (NIL), and criteria that are crucial to the success of a replication platform include both particle control and IP accuracy. In particular, by improving the specifications on the mask chuck, residual errors of only 1nm can be realized.

Enabling inspection solutions for future mask technologies through the development of massively parallel E-Beam inspection

NASA Astrophysics Data System (ADS)

Malloy, Matt; Thiel, Brad; Bunday, Benjamin D.; Wurm, Stefan; Jindal, Vibhu; Mukhtar, Maseeh; Quoi, Kathy; Kemen, Thomas; Zeidler, Dirk; Eberle, Anna Lena; Garbowski, Tomasz; Dellemann, Gregor; Peters, Jan Hendrik

2015-09-01

The new device architectures and materials being introduced for sub-10nm manufacturing, combined with the complexity of multiple patterning and the need for improved hotspot detection strategies, have pushed current wafer inspection technologies to their limits. In parallel, gaps in mask inspection capability are growing as new generations of mask technologies are developed to support these sub-10nm wafer manufacturing requirements. In particular, the challenges associated with nanoimprint and extreme ultraviolet (EUV) mask inspection require new strategies that enable fast inspection at high sensitivity. The tradeoffs between sensitivity and throughput for optical and e-beam inspection are well understood. Optical inspection offers the highest throughput and is the current workhorse of the industry for both wafer and mask inspection. E-beam inspection offers the highest sensitivity but has historically lacked the throughput required for widespread adoption in the manufacturing environment. It is unlikely that continued incremental improvements to either technology will meet tomorrow's requirements, and therefore a new inspection technology approach is required; one that combines the high-throughput performance of optical with the high-sensitivity capabilities of e-beam inspection. To support the industry in meeting these challenges SUNY Poly SEMATECH has evaluated disruptive technologies that can meet the requirements for high volume manufacturing (HVM), for both the wafer fab [1] and the mask shop. Highspeed massively parallel e-beam defect inspection has been identified as the leading candidate for addressing the key gaps limiting today's patterned defect inspection techniques. As of late 2014 SUNY Poly SEMATECH completed a review, system analysis, and proof of concept evaluation of multiple e-beam technologies for defect inspection. A champion approach has been identified based on a multibeam technology from Carl Zeiss. This paper includes a discussion on the need for high-speed e-beam inspection and then provides initial imaging results from EUV masks and wafers from 61 and 91 beam demonstration systems. Progress towards high resolution and consistent intentional defect arrays (IDA) is also shown.

Simple solution for difficult face mask ventilation in children with orofacial clefts.

PubMed

Veerabathula, Prardhana; Patil, Manajeet; Upputuri, Omkar; Durga, Padmaja

2014-10-01

Significant air leak from the facial cleft predisposes to difficult mask ventilation. The reported techniques of use of sterile gauze, larger face mask and laryngeal mask airway after intravenous induction have limited application in uncooperative children. We describe the use of dental impression material molded to the facial contour to cover the facial defect and aid ventilation with an appropriate size face mask in a child with a bilateral Tessier 3 anomaly. © 2014 John Wiley & Sons Ltd.

Nanoimprint wafer and mask tool progress and status for high volume semiconductor manufacturing

NASA Astrophysics Data System (ADS)

Matsuoka, Yoichi; Seki, Junichi; Nakayama, Takahiro; Nakagawa, Kazuki; Azuma, Hisanobu; Yamamoto, Kiyohito; Sato, Chiaki; Sakai, Fumio; Takabayashi, Yukio; Aghili, Ali; Mizuno, Makoto; Choi, Jin; Jones, Chris E.

2016-10-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash* Imprint Lithography (J-FIL*) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. There are many criteria that determine whether a particular technology is ready for wafer manufacturing. Defectivity and mask life play a significant role relative to meeting the cost of ownership (CoO) requirements in the production of semiconductor devices. Hard particles on a wafer or mask create the possibility of inducing a permanent defect on the mask that can impact device yield and mask life. By using material methods to reduce particle shedding and by introducing an air curtain system, the lifetime of both the master mask and the replica mask can be extended. In this work, we report results that demonstrate a path towards achieving mask lifetimes of better than 1000 wafers. On the mask side, a new replication tool, the FPA-1100 NR2 is introduced. Mask replication is required for nanoimprint lithography (NIL), and criteria that are crucial to the success of a replication platform include both particle control, resolution and image placement accuracy. In this paper we discuss the progress made in both feature resolution and in meeting the image placement specification for replica masks.

Real-time line-width measurements: a new feature for reticle inspection systems

NASA Astrophysics Data System (ADS)

Eran, Yair; Greenberg, Gad; Joseph, Amnon; Lustig, Cornel; Mizrahi, Eyal

1997-07-01

The significance of line width control in mask production has become greater with the lessening of defect size. There are two conventional methods used for controlling line widths dimensions which employed in the manufacturing of masks for sub micron devices. These two methods are the critical dimensions (CD) measurement and the detection of edge defects. Achieving reliable and accurate control of line width errors is one of the most challenging tasks in mask production. Neither of the two methods cited above (namely CD measurement and the detection of edge defects) guarantees the detection of line width errors with good sensitivity over the whole mask area. This stems from the fact that CD measurement provides only statistical data on the mask features whereas applying edge defect detection method checks defects on each edge by itself, and does not supply information on the combined result of error detection on two adjacent edges. For example, a combination of a small edge defect together with a CD non- uniformity which are both within the allowed tolerance, may yield a significant line width error, which will not be detected using the conventional methods (see figure 1). A new approach for the detection of line width errors which overcomes this difficulty is presented. Based on this approach, a new sensitive line width error detector was developed and added to Orbot's RT-8000 die-to-database reticle inspection system. This innovative detector operates continuously during the mask inspection process and scans (inspects) the entire area of the reticle for line width errors. The detection is based on a comparison of measured line width that are taken on both the design database and the scanned image of the reticle. In section 2, the motivation for developing this new detector is presented. The section covers an analysis of various defect types, which are difficult to detect using conventional edge detection methods or, alternatively, CD measurements. In section 3, the basic concept of the new approach is introduced together with a description of the new detector and its characteristics. In section 4, the calibration process that took place in order to achieve reliable and repeatable line width measurements is presented. The description of an experiments conducted in order to evaluate the sensitivity of the new detector is given in section 5, followed by a report of the results of this evaluation. The conclusions are presented in section 6.

Current status of x-ray mask manufacturing at the Microlithographic Mask Development Center

NASA Astrophysics Data System (ADS)

Kimmel, Kurt R.; Hughes, Patrick J.

1996-07-01

The Microlithographic Mask Development Center (MMD) has been the focal point of X-ray mask development efforts in the United States since its inception in 1993. Funded by the Advanced Research Projects Agency (ARPA), and with technical support from the Proximity X-ray Lithography Association (AT&T, IBM, Loral Federal Systems, and Motorola) the MMD has recently made dramatic advances in mask fabrication. Numerous defect-free 64Mb and 256Mb DRAM masks have been made on both boron-doped silicon and silicon carbide substrates. Image-placement error of less than 35nm 3 sigma is achieved with high yield. Image-size (critical dimension) control of 25nm 3 sigma on 250nm nominal images is representative performance. This progress is being made in a manufacturing environment with significant volumes, multiple customers, multiple substrate configurations, and fast turnaround-time (TAT) requirements. The MMD state-of-the-art equipment infrastructure has made much of this progress possible. This year the MMD qualified the EL-4, an IBM-designed-and-built variable-shaped-spot e-beam system. The fundamental performance parameters of this system will be described. Operational techniques of multiple partial exposure writing and product specific emulation (PSE) have been implemented to improve image-placement accuracy with remarkable success. Image-size control was studied in detail with contributory components separated. Defect density was systematically reduced to yield defect-free masks while simultaneously tightening inspection criteria. Information about these and other recent engineering highlights will be reported. An outline of the primary engineering challenges and goals for 1996 and status of progress toward 100 nm design rule capability will also be given.

Automated aerial image based CD metrology initiated by pattern marking with photomask layout data

NASA Astrophysics Data System (ADS)

Davis, Grant; Choi, Sun Young; Jung, Eui Hee; Seyfarth, Arne; van Doornmalen, Hans; Poortinga, Eric

2007-05-01

The photomask is a critical element in the lithographic image transfer process from the drawn layout to the final structures on the wafer. The non-linearity of the imaging process and the related MEEF impose a tight control requirement on the photomask critical dimensions. Critical dimensions can be measured in aerial images with hardware emulation. This is a more recent complement to the standard scanning electron microscope measurement of wafers and photomasks. Aerial image measurement includes non-linear, 3-dimensional, and materials effects on imaging that cannot be observed directly by SEM measurement of the mask. Aerial image measurement excludes the processing effects of printing and etching on the wafer. This presents a unique contribution to the difficult process control and modeling tasks in mask making. In the past, aerial image measurements have been used mainly to characterize the printability of mask repair sites. Development of photomask CD characterization with the AIMS TM tool was motivated by the benefit of MEEF sensitivity and the shorter feedback loop compared to wafer exposures. This paper describes a new application that includes: an improved interface for the selection of meaningful locations using the photomask and design layout data with the Calibre TM Metrology Interface, an automated recipe generation process, an automated measurement process, and automated analysis and result reporting on a Carl Zeiss AIMS TM system.

Photomask quality assessment solution for 90-nm technology node

NASA Astrophysics Data System (ADS)

Ohira, Katsumi; Chung, Dong Hoon P.; Nobuyuki, Yoshioka; Tateno, Motonari; Matsumura, Kenichi; Chen, Jiunn-Hung; Luk-Pat, Gerard T.; Fukui, Norio; Tanaka, Yoshio

2004-08-01

As 90 nm LSI devices are about to enter pre-production, the cost and turn-around time of photomasks for such devices will be key factors for success in device production. Such devices will be manufactured with state-of-the-art 193nm photolithography systems. Photomasks for these devices are being produced with the most advanced equipment, material and processing technologies and yet, quality assurance still remains an issue for volume production. These issues include defect classification and disposition due to the insufficient resolution of the defect inspection system at conventional review and classification processes and to aggressive RETs, uncertainty of the impact the defects have on the printed feature as well as inconsistencies of classical defect specifications as applied in the sub-wavelength era are becoming a serious problem. Simulation-based photomask qualification using the Virtual Stepper System is widely accepted today as a reliable mask quality assessment tool of mask defects for both the 180 nm and 130 nm technology nodes. This study examines the extendibility of the Virtual Stepper System to 90nm technology node. The proposed method of simulation-based mask qualification uses aerial image defect simulation in combination with a next generation DUV inspection system with shorter wavelength (266nm) and small pixel size combined with DUV high-resolution microscope for some defect cases. This paper will present experimental results that prove the applicability for enabling 90nm technology nodes. Both contact and line/space patterns with varies programmed defects on ArF Attenuated PSM will be used. This paper will also address how to make the strategy production-worthy.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Claus, Rene A.; Wang, Yow-Gwo; Wojdyla, Antoine

Extreme Ultraviolet (EUV) Lithography mask defects were examined on the actinic mask imaging system, SHARP, at Lawrence Berkeley National Laboratory. Also, a quantitative phase retrieval algorithm based on the Weak Object Transfer Function was applied to the measured through-focus aerial images to examine the amplitude and phase of the defects. The accuracy of the algorithm was demonstrated by comparing the results of measurements using a phase contrast zone plate and a standard zone plate. Using partially coherent illumination to measure frequencies that would otherwise fall outside the numerical aperture (NA), it was shown that some defects are smaller than themore » conventional resolution of the microscope. We found that the programmed defects of various sizes were measured and shown to have both an amplitude and a phase component that the algorithm is able to recover.« less

Automated real-time detection of defects during machining of ceramics

DOEpatents

Ellingson, W.A.; Sun, J.

1997-11-18

Apparatus for the automated real-time detection and classification of defects during the machining of ceramic components employs an elastic optical scattering technique using polarized laser light. A ceramic specimen is continuously moved while being machined. Polarized laser light is directed onto the ceramic specimen surface at a fixed position just aft of the machining tool for examination of the newly machined surface. Any foreign material near the location of the laser light on the ceramic specimen is cleared by an air blast. As the specimen is moved, its surface is continuously scanned by the polarized laser light beam to provide a two-dimensional image presented in real-time on a video display unit, with the motion of the ceramic specimen synchronized with the data acquisition speed. By storing known ``feature masks`` representing various surface and sub-surface defects and comparing measured defects with the stored feature masks, detected defects may be automatically characterized. Using multiple detectors, various types of defects may be detected and classified. 14 figs.

Automated real-time detection of defects during machining of ceramics

DOEpatents

Ellingson, William A.; Sun, Jiangang

1997-01-01

Apparatus for the automated real-time detection and classification of defects during the machining of ceramic components employs an elastic optical scattering technique using polarized laser light. A ceramic specimen is continuously moved while being machined. Polarized laser light is directed onto the ceramic specimen surface at a fixed position just aft of the machining tool for examination of the newly machined surface. Any foreign material near the location of the laser light on the ceramic specimen is cleared by an air blast. As the specimen is moved, its surface is continuously scanned by the polarized laser light beam to provide a two-dimensional image presented in real-time on a video display unit, with the motion of the ceramic specimen synchronized with the data acquisition speed. By storing known "feature masks" representing various surface and sub-surface defects and comparing measured defects with the stored feature masks, detected defects may be automatically characterized. Using multiple detectors, various types of defects may be detected and classified.

Method and apparatus for inspecting an EUV mask blank

DOEpatents

Goldberg, Kenneth A.

2005-11-08

An apparatus and method for at-wavelength EUV mask-blank characterization for inspection of moderate and low spatial frequency coating uniformity using a synchrotron or other source of EUV light. The apparatus provides for rapid, non-destruction, non-contact, at-wavelength qualification of large mask areas, and can be self-calibrating or be calibrated to well-characterized reference samples. It can further check for spatial variation of mask reflectivity or for global differences among masks. The apparatus and method is particularly suited for inspection of coating uniformity and quality and can detect defects in the order of 50 .mu.m and above.

Advanced repair solution of clear defects on HTPSM by using nanomachining tool

NASA Astrophysics Data System (ADS)

Lee, Hyemi; Kim, Munsik; Jung, Hoyong; Kim, Sangpyo; Yim, Donggyu

2015-10-01

As the mask specifications become tighter for low k1 lithography, more aggressive repair accuracy is required below sub 20nm tech. node. To meet tight defect specifications, many maskshops select effective repair tools according to defect types. Normally, pattern defects are repaired by the e-beam repair tool and soft defects such as particles are repaired by the nanomachining tool. It is difficult for an e-beam repair tool to remove particle defects because it uses chemical reaction between gas and electron, and a nanomachining tool, which uses physical reaction between a nano-tip and defects, cannot be applied for repairing clear defects. Generally, film deposition process is widely used for repairing clear defects. However, the deposited film has weak cleaning durability, so it is easily removed by accumulated cleaning process. Although the deposited film is strongly attached on MoSiN(or Qz) film, the adhesive strength between deposited Cr film and MoSiN(or Qz) film becomes weaker and weaker by the accumulated energy when masks are exposed in a scanner tool due to the different coefficient of thermal expansion of each materials. Therefore, whenever a re-pellicle process is needed to a mask, all deposited repair points have to be confirmed whether those deposition film are damaged or not. And if a deposition point is damaged, repair process is needed again. This process causes longer and more complex process. In this paper, the basic theory and the principle are introduced to recover clear defects by using nanomachining tool, and the evaluated results are reviewed at dense line (L/S) patterns and contact hole (C/H) patterns. Also, the results using a nanomachining were compared with those using an e-beam repair tool, including the cleaning durability evaluated by the accumulated cleaning process. Besides, we discuss the phase shift issue and the solution about the image placement error caused by phase error.

Laboratory demonstration of an optical vortex mask coronagraph using photonic crystal

NASA Astrophysics Data System (ADS)

Murakami, N.; Baba, N.; Ise, A.; Sakamoto, M.; Oka, K.

2010-10-01

Photonic crystal, artificial periodic nanostructure, is an attractive device for constructing focal-plane phase-mask coronagraphs such as segmented phase masks (four-quadrant, eight-octant, and 4N-segmented ones) and an optical vortex mask (OVM), because of its extremely small manufacturing defect. Recently, speckle-noise limited contrast has been demonstrated for two monochromatic lasers by using the eight-octant phase-mask made of the photonic crystal (Murakami et al. 2010, ApJ, 714, 772). We applied the photonic-crystal device to the OVM coronagraph. The OVM is more advantageous over the segmented phase masks because it does not have discontinuities other than a central singular point and provides a full on-sky field of view. For generating an achromatic optical vortex, we manufactured an axially-symmetric half-wave plate (ASHWP). It is expected that a size of the manufacturing defect due to the central singularity is an order of several hundreds nanometers. The ASHWP is placed between two circular polarizers for modulating a Pancharatnam phase. A continuous spiral phase modulation is then implemented achromatically. We carried out preliminary laboratory demonstration of the OVM coronagraph using two monochromatic lasers as a model star (wavelengths of 532 nm and 633 nm). We report a principle of the achromatic optical-vortex generation, and results of the laboratory demonstration of the OVM coronagraph.

Observation of EUVL mask using coherent EUV scatterometry microscope with high-harmonic-generation EUV source

NASA Astrophysics Data System (ADS)

Mamezaki, Daiki; Harada, Tetsuo; Nagata, Yutaka; Watanabe, Takeo

2017-07-01

In extreme ultraviolet (EUV) lithography, development of review tools for EUV mask pattern and phase defect at working wavelength of 13.5 nm is required. The EUV mask is composed of an absorber pattern (50 - 70 nm thick) and Mo/Si multilayer (280 nm thick) on a glass substrate. This mask pattern seems three-dimensional (3D) structure. This 3D structure would modulate EUV reflection phase, which would cause focus and pattern shifts. Thus, EUV phase imaging is important to evaluate this phase modulation. We have developed coherent EUV scatterometry microscope (CSM), which is a simple microscope without objective optics. EUV phase and intensity image are reconstructed with diffraction images by ptychography with coherent EUV illumination. The high-harmonic-generation (HHG) EUV source was employed for standalone CSM system. In this study, we updated HHG system of pump-laser reduction and gas-pressure control. Two types of EUV mask absorber patterns were observed. An 88-nm lines-and-spaces and a cross-line patterns were clearly reconstructed by ptychography. In addition, a natural defect with 2-μm diameter on the cross-line was well reconstructed. This demonstrated the high capability of the standalone CSM, which system will be used in the factories, such as mask shops and semiconductor fabrication plants.

SEMATECH EUVL mask program status

NASA Astrophysics Data System (ADS)

Yun, Henry; Goodwin, Frank; Huh, Sungmin; Orvek, Kevin; Cha, Brian; Rastegar, Abbas; Kearney, Patrick

2009-04-01

As we approach the 22nm half-pitch (hp) technology node, the industry is rapidly running out of patterning options. Of the several lithography techniques highlighted in the International Technology Roadmap for Semiconductors (ITRS), the leading contender for the 22nm hp insertion is extreme ultraviolet lithography (EUVL). Despite recent advances with EUV resist and improvements in source power, achieving defect free EUV mask blank and enabling the EUV mask infrastructure still remain critical issues. To meet the desired EUV high volume manufacturing (HVM) insertion target date of 2013, these obstacles must be resolved on a timely bases. Many of the EUV mask related challenges remain in the pre-competitive stage and a collaborative industry based consortia, such as SEMATECH can play an important role to enable the EUVL landscape. SEMATECH based in Albany, NY is an international consortium representing several of the largest manufacturers in the semiconductor market. Full members include Intel, Samsung, AMD, IBM, Panasonic, HP, TI, UMC, CNSE (College of Nanoscience and Engineering), and Fuller Road Management. Within the SEMATECH lithography division a major thrust is centered on enabling the EUVL ecosystem from mask development, EUV resist development and addressing EUV manufacturability concerns. An important area of focus for the SEMATECH mask program has been the Mask Blank Development Center (MBDC). At the MBDC key issues in EUV blank development such as defect reduction and inspection capabilities are actively pursued together with research partners, key suppliers and member companies. In addition the mask program continues a successful track record of working with the mask community to manage and fund critical mask tools programs. This paper will highlight recent status of mask projects and longer term strategic direction at the MBDC. It is important that mask technology be ready to support pilot line development HVM by 2013. In several areas progress has been made but a continued collaborative effort will be needed along with timely infrastructure investments to meet these challenging goals.

Modeling and Observations of Phase-Mask Trapezoidal Profiles with Grating-Fiber Image Reproduction

NASA Technical Reports Server (NTRS)

Lyons, Donald R.; Lindesay, James V.; Lee, Hyung R.; Ndlela, Zolili U.; Thompso, Erica J.

2000-01-01

We report on an investigation of the trapezoidal design and fabrication defects in phase masks used to produce Bragg reflection gratings in optical fibers. We used a direct visualization technique to examine the nonuniformity of the interference patterns generated by several phase masks. Fringe patterns from the phase masks are compared with the analogous patterns resulting from two-beam interference. Atomic force microscope imaging of the actual phase gratings that give rise to anomalous fringe patterns is used to determine input parameters for a general theoretical model. Phase masks with pitches of 0.566 and 1.059 microns are modeled and investigated.

Alternating phase-shift mask and binary mask for 45-nm node and beyond: the impact on the mask error control

NASA Astrophysics Data System (ADS)

Kojima, Yosuke; Shirasaki, Masanori; Chiba, Kazuaki; Tanaka, Tsuyoshi; Inazuki, Yukio; Yoshikawa, Hiroki; Okazaki, Satoshi; Iwase, Kazuya; Ishikawa, Kiichi; Ozawa, Ken

2007-05-01

For 45 nm node and beyond, the alternating phase-shift mask (alt. PSM), one of the most expected resolution enhancement technologies (RET) because of its high image contrast and small mask error enhancement factor (MEEF), and the binary mask (BIM) attract attention. Reducing CD and registration errors and defect are their critical issues. As the solution, the new blank for alt. PSM and BIM is developed. The top film of new blank is thin Cr, and the antireflection film and shielding film composed of MoSi are deposited under the Cr film. The mask CD performance is evaluated for through pitch, CD linearity, CD uniformity, global loading, resolution and pattern fidelity, and the blank performance is evaluated for optical density, reflectivity, sheet resistance, flatness and defect level. It is found that the performance of new blank is equal to or better than that of conventional blank in all items. The mask CD performance shows significant improvement. The lithography performance of new blank is confirmed by wafer printing and AIMS measurement. The full dry type alt. PSM has been used as test plate, and the test results show that new blank can almost meet the specifications of pi-0 CD difference, CD uniformity and process margin for 45 nm node. Additionally, the new blank shows the better pattern fidelity than that of conventional blank on wafer. AIMS results are almost same as wafer results except for the narrowest pattern. Considering the result above, this new blank can reduce the mask error factors of alt. PSM and BIM for 45 nm node and beyond.

A review of nanoimprint lithography for high-volume semiconductor device manufacturing

NASA Astrophysics Data System (ADS)

Resnick, Douglas J.; Choi, Jin

2017-06-01

Imprint lithography has been shown to be a promising technique for the replication of nanoscale features. Jet and flash imprint lithography (J-FIL) [jet and flash imprint lithography and J-FIL are trademarks of Molecular Imprints, Inc.] involves the field-by-field deposition and exposure of a low-viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid, which then quickly flows into the relief patterns in the mask by capillary action. After this filling step, the resist is cross-linked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. There are many criteria that determine whether a particular technology is ready for wafer manufacturing. Included on the list are overlay, throughput, and defectivity. The most demanding devices now require an overlay of better than 4 nm, 3σ. Throughput for an imprint tool is generally targeted at 80 wafers/h. Defectivity and mask life play a significant role relative to meeting the cost of ownership (CoO) requirements in the production of semiconductor devices. The purpose of this paper is to report the status of throughput and defectivity work and to describe the progress made in addressing overlay for advanced devices. To address high-order corrections, a high-order distortion correction (HODC) system is introduced. The combination of applying magnification actuation to the mask and temperature correction to the wafer is described in detail. Examples are presented for the correction of K7, K11, and K17 distortions as well as distortions on actual device wafers.

78 FR 23458 - Airworthiness Directives; Dassault Aviation Airplanes

Federal Register 2010, 2011, 2012, 2013, 2014

2013-04-19

... aircraft flight manual (AFM); performing operational tests of the oxygen mask oxygen assembly; and... prompted by failure of the flight crew oxygen supply due to a potentially defective flight crew mask oxygen assembly. We are issuing this AD to prevent failure to supply oxygen upon demand to the flight crew in...

A model-based approach for the scattering-bar printing avoidance

NASA Astrophysics Data System (ADS)

Du, Yaojun; Li, Liang; Zhang, Jingjing; Shao, Feng; Zuniga, Christian; Deng, Yunfei

2018-03-01

As the technology node for the semiconductor manufacturing approaches advanced nodes, the scattering-bars (SBs) are more crucial than ever to ensure a good on-wafer printability of the line space pattern and hole pattern. The main pattern with small pitches requires a very narrow PV (process variation) band. A delicate SB addition scheme is thus needed to maintain a sufficient PW (process window) for the semi-iso- and iso-patterns. In general, the wider, longer, and closer to main feature SBs will be more effective in enhancing the printability; on the other hand, they are also more likely to be printed on the wafer; resulting in undesired defects transferable to subsequent processes. In this work, we have developed a model based approach for the scattering-bar printing avoidance (SPA). A specially designed optical model was tuned based on a broad range of test patterns which contain a variation of CDs and SB placements showing printing and non-printing scattering bars. A printing threshold is then obtained to check the extra-printings of SBs. The accuracy of this threshold is verified by pre-designed test patterns. The printing threshold associated with our novel SPA model allows us to set up a proper SB rule.

Impact of humidity on functionality of on-paper printed electronics.

PubMed

Bollström, Roger; Pettersson, Fredrik; Dolietis, Peter; Preston, Janet; Osterbacka, Ronald; Toivakka, Martti

2014-03-07

A multilayer coated paper substrate, combining barrier and printability properties was manufactured utilizing a pilot-scale slide curtain coating technique. The coating structure consists of a thin mineral pigment layer coated on top of a barrier layer. The surface properties, i.e. smoothness and surface porosity, were adjusted by the choice of calendering parameters. The influence of surface properties on the fine line printability and conductivity of inkjet-printed silver lines was studied. Surface roughness played a significant role when printing narrow lines, increasing the risk of defects and discontinuities, whereas for wider lines the influence of surface roughness was less critical. A smooth, calendered surface resulted in finer line definition, i.e. less edge raggedness. Dimensional stability and its influence on substrate surface properties as well as on the functionality of conductive tracks and transistors were studied by exposure to high/low humidity cycles. The barrier layer of the multilayer coated paper reduced the dimensional changes and surface roughness increase caused by humidity and helped maintain the conductivity of the printed tracks. Functionality of a printed transistor during a short, one hour humidity cycle was maintained, but a longer exposure to humidity destroyed the non-encapsulated transistor.

Optical method and apparatus for detection of surface and near-subsurface defects in dense ceramics

DOEpatents

Ellingson, William A.; Brada, Mark P.

1995-01-01

A laser is used in a non-destructive manner to detect surface and near-subsurface defects in dense ceramics and particularly in ceramic bodies with complex shapes such as ceramic bearings, turbine blades, races, and the like. The laser's wavelength is selected based upon the composition of the ceramic sample and the laser can be directed on the sample while the sample is static or in dynamic rotate or translate motion. Light is scattered off surface and subsurface defects using a preselected polarization. The change in polarization angle is used to select the depth and characteristics of surface/subsurface defects. The scattered light is detected by an optical train consisting of a charge coupled device (CCD), or vidicon, television camera which, in turn, is coupled to a video monitor and a computer for digitizing the image. An analyzing polarizer in the optical train allows scattered light at a given polarization angle to be observed for enhancing sensitivity to either surface or near-subsurface defects. Application of digital image processing allows subtraction of digitized images in near real-time providing enhanced sensitivity to subsurface defects. Storing known "feature masks" of identified defects in the computer and comparing the detected scatter pattern (Fourier images) with the stored feature masks allows for automatic classification of detected defects.

Results from the first fully automated PBS-mask process and pelliclization

NASA Astrophysics Data System (ADS)

Oelmann, Andreas B.; Unger, Gerd M.

1994-02-01

Automation is widely discussed in IC- and mask-manufacturing and partially realized everywhere. The idea for the automation goes back to 1978, when it turned out that the operators for the then newly installed PBS-process-line (the first in Europe) should be trained to behave like robots for particle reduction gaining lower defect densities on the masks. More than this goal has been achieved. It turned out recently, that the automation with its dedicated work routes and detailed documentation of every lot (individual mask or reticle) made it easy to obtain the CEEC certificate which includes ISO 9001.

Particle protection capability of SEMI-compliant EUV-pod carriers

NASA Astrophysics Data System (ADS)

Huang, George; He, Long; Lystad, John; Kielbaso, Tom; Montgomery, Cecilia; Goodwin, Frank

2010-04-01

With the projected rollout of pre-production extreme ultraviolet lithography (EUVL) scanners in 2010, EUVL pilot line production will become a reality in wafer fabrication companies. Among EUVL infrastructure items that must be ready, EUV mask carriers remain critical. To keep non-pellicle EUV masks free from particle contamination, an EUV pod concept has been extensively studied. Early prototypes demonstrated nearly particle-free results at a 53 nm PSL equivalent inspection sensitivity during EUVL mask robotic handling, shipment, vacuum pump-purge, and storage. After the passage of SEMI E152, which specifies the EUV pod mechanical interfaces, standards-compliant EUV pod prototypes, including a production version inner pod and prototype outer pod, were built and tested. Their particle protection capability results are reported in this paper. A state-of-the-art blank defect inspection tool was used to quantify their defect protection capability during mask robotic handling, shipment, and storage tests. To ensure the availability of an EUV pod for 2010 pilot production, the progress and preliminary test results of pre-production EUV outer pods are reported as well.

Development of EUV mask handling technology at MIRAI-Selete

NASA Astrophysics Data System (ADS)

Ota, Kazuya; Amemiya, Mitsuaki; Taguchi, Takao; Kamono, Takashi; Kubo, Hiroyoshi; Takikawa, Tadahiko; Usui, Yoichi; Suga, Osamu

2007-03-01

We, MIRAI-Selete, started a new EUV mask program in April, 2006. Development of EUV mask handling technology is one of the key areas of the program. We plan to develop mask handling technology and to evaluate EUV mask carriers using Lasertec M3350, a particle inspection tool with the defect sensitivity less than 50nm PSL, and Mask Protection Engineering Tool (named "MPE Tool"). M3350 is a newly developed tool based on a conventional M1350 for EUV blanks inspection. Since our M3350 has a blank flipping mechanism in it, we can inspect the front and the back surface of the blank automatically. We plan to use the M3350 for evaluating particle adders during mask shipping, storage and handling. MPE Tool is a special tool exclusively developed for demonstration of pellicleless mask handling. It can handle a mask within a protective enclosure, which Canon and Nikon have been jointly proposing1, and also, can be modified to handle other type of carrier as the need arises.

Development of a novel alginate-polyvinyl alcohol-hydroxyapatite hydrogel for 3D bioprinting bone tissue engineered scaffolds.

PubMed

Bendtsen, Stephanie T; Quinnell, Sean P; Wei, Mei

2017-05-01

Three-dimensional printed biomaterials used as personalized tissue substitutes have the ability to promote and enhance regeneration in areas of defected tissue. The challenge with 3D printing for bone tissue engineering remains the selection of a material with optimal rheological properties for printing in addition to biocompatibility and capacity for uniform cell incorporation. Hydrogel biomaterials may provide sufficient printability to allow cell encapsulation and bioprinting of scaffolds with uniform cell distribution. In this study, a novel alginate-polyvinyl alcohol (PVA)-hydroxyapatite (HA) hydrogel formulation with optimal rheological properties for 3D bioprinting of mouse calvaria 3T3-E1 (MC3T3) cells into scaffolds of high shape fidelity has been developed. A systematic investigation was conducted to determine the effect of varying concentrations of alginate, phosphate, calcium, and the PVA-HA suspension in the formulation on the resulting viscosity and thus printability of the hydrogel. HA, the main mineral component in natural bone, was incorporated into the hydrogel formulation to create a favorable bone-forming environment due to its excellent osteoconductivity. Degradation studies in α-MEM cell culture media showed that the 3D printed alginate-PVA-HA scaffolds remained in-tact for 14 days. MC3T3 cells were well distributed and encapsulated throughout the optimal hydrogel formulation and expressed high viability through the completion of the 3D printing process. Thus, the development of this novel, osteoconductive, biodegradable, alginate-PVA-HA formulation and its ability to 3D bioprint tissue engineered scaffolds make it a promising candidate for treating personalized bone defects. © 2017 Wiley Periodicals, Inc. J Biomed Mater Res Part A: 105A: 1457-1468, 2017. © 2017 Wiley Periodicals, Inc.

EUV multilayer defect compensation (MDC) by absorber pattern modification: from theory to wafer validation

NASA Astrophysics Data System (ADS)

Pang, Linyong; Hu, Peter; Satake, Masaki; Tolani, Vikram; Peng, Danping; Li, Ying; Chen, Dongxue

2011-11-01

According to the ITRS roadmap, mask defects are among the top technical challenges to introduce extreme ultraviolet (EUV) lithography into production. Making a multilayer defect-free extreme ultraviolet (EUV) blank is not possible today, and is unlikely to happen in the next few years. This means that EUV must work with multilayer defects present on the mask. The method proposed by Luminescent is to compensate effects of multilayer defects on images by modifying the absorber patterns. The effect of a multilayer defect is to distort the images of adjacent absorber patterns. Although the defect cannot be repaired, the images may be restored to their desired targets by changing the absorber patterns. This method was first introduced in our paper at BACUS 2010, which described a simple pixel-based compensation algorithm using a fast multilayer model. The fast model made it possible to complete the compensation calculations in seconds, instead of days or weeks required for rigorous Finite Domain Time Difference (FDTD) simulations. Our SPIE 2011 paper introduced an advanced compensation algorithm using the Level Set Method for 2D absorber patterns. In this paper the method is extended to consider process window, and allow repair tool constraints, such as permitting etching but not deposition. The multilayer defect growth model is also enhanced so that the multilayer defect can be "inverted", or recovered from the top layer profile using a calibrated model.

Edge printability: techniques used to evaluate and improve extreme wafer edge printability

NASA Astrophysics Data System (ADS)

Roberts, Bill; Demmert, Cort; Jekauc, Igor; Tiffany, Jason P.

2004-05-01

The economics of semiconductor manufacturing have forced process engineers to develop techniques to increase wafer yield. Improvements in process controls and uniformities in all areas of the fab have reduced film thickness variations at the very edge of the wafer surface. This improved uniformity has provided the opportunity to consider decreasing edge exclusions, and now the outermost extents of the wafer must be considered in the yield model and expectations. These changes have increased the requirements on lithography to improve wafer edge printability in areas that previously were not even coated. This has taxed all software and hardware components used in defining the optical focal plane at the wafer edge. We have explored techniques to determine the capabilities of extreme wafer edge printability and the components of the systems that influence this printability. We will present current capabilities and new detection techniques and the influence that the individual hardware and software components have on edge printability. We will show effects of focus sensor designs, wafer layout, utilization of dummy edge fields, the use of non-zero overlay targets and chemical/optical edge bead optimization.

Accelerating yield ramp through design and manufacturing collaboration

NASA Astrophysics Data System (ADS)

Sarma, Robin C.; Dai, Huixiong; Smayling, Michael C.; Duane, Michael P.

2004-12-01

Ramping an integrated circuit from first silicon bring-up to production yield levels is a challenge for all semiconductor products on the path to profitable market entry. Two approaches to accelerating yield ramp are presented. The first is the use of laser mask writers for fast throughput, high yield, and cost effective pattern transfer. The second is the use of electrical test to find a defect and identify the physical region to probe in failure analysis that is most likely to uncover the root cause. This provides feedback to the design team on modifications to make to the design to avoid the yield issue in a future tape-out revision. Additionally, the process parameter responsible for the root cause of the defect is forward annotated through the design, mask and wafer coordinate systems so it can be monitored in-line on subsequent lots of the manufacturing run. This results in an improved recipe for the manufacturing equipment to potentially prevent the recurrence of the defect and raise yield levels on the following material. The test diagnostics approach is enabled by the seamless traceability of a feature across the design, photomask and wafer, made possible by a common data model for design, mask pattern generation and wafer fabrication.

EUVL mask patterning with blanks from commercial suppliers

NASA Astrophysics Data System (ADS)

Yan, Pei-Yang; Zhang, Guojing; Nagpal, Rajesh; Shu, Emily Y.; Li, Chaoyang; Qu, Ping; Chen, Frederick T.

2004-12-01

Extreme Ultraviolet Lithography (EUVL) reflective mask blank development includes low thermal expansion material fabrication, mask substrate finishing, reflective multi-layer (ML) and capping layer deposition, buffer (optional)/absorber stack deposition, EUV specific metrology, and ML defect inspection. In the past, we have obtained blanks deposited with various layer stacks from several vendors. Some of them are not commercial suppliers. As a result, the blank and patterned mask qualities are difficult to maintain and improve. In this paper we will present the evaluation results of the EUVL mask pattering processes with the complete EUVL mask blanks supplied by the commercial blank supplier. The EUVL mask blanks used in this study consist of either quartz or ULE substrates which is a type of low thermal expansion material (LTEM), 40 pairs of molybdenum/silicon (Mo/Si) ML layer, thin ruthenium (Ru) capping layer, tantalum boron nitride (TaBN) absorber, and chrome (Cr) backside coating. No buffer layer is used. Our study includes the EUVL mask blank characterization, patterned EUVL mask characterization, and the final patterned EUVL mask flatness evaluation.

DFM for maskmaking: design-aware flexible mask-defect analysis

NASA Astrophysics Data System (ADS)

Driessen, Frank A. J. M.; Westra, J.; Scheffer, M.; Kawakami, K.; Tsujimoto, E.; Yamaji, M.; Kawashima, T.; Hayashi, N.

2007-10-01

We present a novel software system that combines design intent as known by EDA designers with defect inspection results from the maskshop to analyze the severity of defects on photomasks. The software -named Takumi Design- Driven Defect Analyzer (TK-D3A)- analyzes defects by combining actions in the image domain with actions in the design domain and outputs amongst others flexible mask-repair decisions in production formats used by the maskshop. Furthermore, TK-D3A outputs clips of layout (GDS/OASIS) that can be viewed with its graphical user interface for easy review of the defects and associated repair decisions. As inputs the system uses reticle defect-inspection data (text and images) and the respective multi-layer design layouts with the definitions of criticalities. The system does not require confidential design data from IDM, Fabless Design House, or Foundry to be sent to the maskshop and it also has minimal impact on the maskshop's mode of operation. The output of TK-D3A is designed to realize value to the maskshop and its customers in the forms of: 1) improved yield, 2) reduction of delivery times of masks to customers, and 3) enhanced utilization of the maskshop's installed tool base. The system was qualified together with a major IDM on a large set of production reticles in the 90 and beyond-65 nm technology nodes of which results will be presented that show the benefits for maskmaking. The accuracy in detecting defects is extremely high. We show the system's capability to analyze defects well below the pixel resolution of all inspection tools used, as well as the capability to extract multiple types of transmission defects. All of these defects are analyzed design-criticality-aware by TK-D3A, resulting in a large fraction of defects that do not need to be repaired because they are located in non-critical or less-critical parts of the layout, or, more importantly, turn out to be repairable or negligible despite of originally being classified as unrepairable when no such criticality knowledge is used. Finally, we show that the runtimes of TK-D3A are relatively short, despite the fact that the system operates on full-chip designs.

Materials Properties of Printable Edible Inks and Printing Parameters Optimization during 3D Printing: a review.

PubMed

Feng, Chunyan; Zhang, Min; Bhandari, Bhesh

2018-06-01

Interest in additive manufacture has grown significantly in recent years, driving a need for printable materials that can sustain high strains and still fulfill their function in applications such as tissue engineering, regenerative medicine field, food engineering and field of aerospace, etc. As an emerging and promising technology, 3Dprinting has attracted more and more attention with fast manipulation, reduce production cost, customize geometry, increase competitiveness and advantages in many hot research areas. Many researchers have done a lot of investigations on printable materials, ranging from a single material to composite material. Main content: This review focuses on the contents of printable edible inks. It also gathers and analyzes information on the effects of printable edible ink material properties on 3D print accuracy. In addition, it discusses the impact of printing parameters on accurate printing, and puts forward current challenges and recommendations for future research and development.

Optical method and apparatus for detection of surface and near-subsurface defects in dense ceramics

DOEpatents

Ellingson, W.A.; Brada, M.P.

1995-06-20

A laser is used in a non-destructive manner to detect surface and near-subsurface defects in dense ceramics and particularly in ceramic bodies with complex shapes such as ceramic bearings, turbine blades, races, and the like. The laser`s wavelength is selected based upon the composition of the ceramic sample and the laser can be directed on the sample while the sample is static or in dynamic rotate or translate motion. Light is scattered off surface and subsurface defects using a preselected polarization. The change in polarization angle is used to select the depth and characteristics of surface/subsurface defects. The scattered light is detected by an optical train consisting of a charge coupled device (CCD), or vidicon, television camera which, in turn, is coupled to a video monitor and a computer for digitizing the image. An analyzing polarizer in the optical train allows scattered light at a given polarization angle to be observed for enhancing sensitivity to either surface or near-subsurface defects. Application of digital image processing allows subtraction of digitized images in near real-time providing enhanced sensitivity to subsurface defects. Storing known ``feature masks`` of identified defects in the computer and comparing the detected scatter pattern (Fourier images) with the stored feature masks allows for automatic classification of detected defects. 29 figs.

Automated reticle inspection data analysis for wafer fabs

NASA Astrophysics Data System (ADS)

Summers, Derek; Chen, Gong; Reese, Bryan; Hutchinson, Trent; Liesching, Marcus; Ying, Hai; Dover, Russell

2009-04-01

To minimize potential wafer yield loss due to mask defects, most wafer fabs implement some form of reticle inspection system to monitor photomask quality in high-volume wafer manufacturing environments. Traditionally, experienced operators review reticle defects found by an inspection tool and then manually classify each defect as 'pass, warn, or fail' based on its size and location. However, in the event reticle defects are suspected of causing repeating wafer defects on a completed wafer, potential defects on all associated reticles must be manually searched on a layer-by-layer basis in an effort to identify the reticle responsible for the wafer yield loss. This 'problem reticle' search process is a very tedious and time-consuming task and may cause extended manufacturing line-down situations. Often times, Process Engineers and other team members need to manually investigate several reticle inspection reports to determine if yield loss can be tied to a specific layer. Because of the very nature of this detailed work, calculation errors may occur resulting in an incorrect root cause analysis effort. These delays waste valuable resources that could be spent working on other more productive activities. This paper examines an automated software solution for converting KLA-Tencor reticle inspection defect maps into a format compatible with KLA-Tencor's Klarity Defect(R) data analysis database. The objective is to use the graphical charting capabilities of Klarity Defect to reveal a clearer understanding of defect trends for individual reticle layers or entire mask sets. Automated analysis features include reticle defect count trend analysis and potentially stacking reticle defect maps for signature analysis against wafer inspection defect data. Other possible benefits include optimizing reticle inspection sample plans in an effort to support "lean manufacturing" initiatives for wafer fabs.

Automated reticle inspection data analysis for wafer fabs

NASA Astrophysics Data System (ADS)

Summers, Derek; Chen, Gong; Reese, Bryan; Hutchinson, Trent; Liesching, Marcus; Ying, Hai; Dover, Russell

2009-03-01

To minimize potential wafer yield loss due to mask defects, most wafer fabs implement some form of reticle inspection system to monitor photomask quality in high-volume wafer manufacturing environments. Traditionally, experienced operators review reticle defects found by an inspection tool and then manually classify each defect as 'pass, warn, or fail' based on its size and location. However, in the event reticle defects are suspected of causing repeating wafer defects on a completed wafer, potential defects on all associated reticles must be manually searched on a layer-by-layer basis in an effort to identify the reticle responsible for the wafer yield loss. This 'problem reticle' search process is a very tedious and time-consuming task and may cause extended manufacturing line-down situations. Often times, Process Engineers and other team members need to manually investigate several reticle inspection reports to determine if yield loss can be tied to a specific layer. Because of the very nature of this detailed work, calculation errors may occur resulting in an incorrect root cause analysis effort. These delays waste valuable resources that could be spent working on other more productive activities. This paper examines an automated software solution for converting KLA-Tencor reticle inspection defect maps into a format compatible with KLA-Tencor's Klarity DefectTM data analysis database. The objective is to use the graphical charting capabilities of Klarity Defect to reveal a clearer understanding of defect trends for individual reticle layers or entire mask sets. Automated analysis features include reticle defect count trend analysis and potentially stacking reticle defect maps for signature analysis against wafer inspection defect data. Other possible benefits include optimizing reticle inspection sample plans in an effort to support "lean manufacturing" initiatives for wafer fabs.

Method to repair localized amplitude defects in a EUV lithography mask blank

DOEpatents

Stearns, Daniel G.; Sweeney, Donald W.; Mirkarimi, Paul B.; Chapman, Henry N.

2005-11-22

A method and apparatus are provided for the repair of an amplitude defect in a multilayer coating. A significant number of layers underneath the amplitude defect are undamaged. The repair technique restores the local reflectivity of the coating by physically removing the defect and leaving a wide, shallow crater that exposes the underlying intact layers. The particle, pit or scratch is first removed the remaining damaged region is etched away without disturbing the intact underlying layers.

Fabrication of coronagraph masks and laboratory scale star-shade masks: characteristics, defects, and performance

NASA Astrophysics Data System (ADS)

Balasubramanian, Kunjithapatham; Riggs, A. J. Eldorado; Cady, Eric; White, Victor; Yee, Karl; Wilson, Daniel; Echternach, Pierre; Muller, Richard; Mejia Prada, Camilo; Seo, Byoung-Joon; Shi, Fang; Ryan, Daniel; Fregoso, Santos; Metzman, Jacob; Wilson, Robert Casey

2017-09-01

NASA WFIRST mission has planned to include a coronagraph instrument to find and characterize exoplanets. Masks are needed to suppress the host star light to better than 10-8 - 10-9 level contrast over a broad bandwidth to enable the coronagraph mission objectives. Such masks for high contrast coronagraphic imaging require various fabrication technologies to meet a wide range of specifications, including precise shapes, micron scale island features, ultra-low reflectivity regions, uniformity, wave front quality, etc. We present the technologies employed at JPL to produce these pupil plane and image plane coronagraph masks, and lab-scale external occulter masks, highlighting accomplishments from the high contrast imaging testbed (HCIT) at JPL and from the high contrast imaging lab (HCIL) at Princeton University. Inherent systematic and random errors in fabrication and their impact on coronagraph performance are discussed with model predictions and measurements.

Cluster tool solution for fabrication and qualification of advanced photomasks

NASA Astrophysics Data System (ADS)

Schaetz, Thomas; Hartmann, Hans; Peter, Kai; Lalanne, Frederic P.; Maurin, Olivier; Baracchi, Emanuele; Miramond, Corinne; Brueck, Hans-Juergen; Scheuring, Gerd; Engel, Thomas; Eran, Yair; Sommer, Karl

2000-07-01

The reduction of wavelength in optical lithography, phase shift technology and optical proximity correction (OPC), requires a rapid increase in cost effective qualification of photomasks. The knowledge about CD variation, loss of pattern fidelity especially for OPC pattern and mask defects concerning the impact on wafer level is becoming a key issue for mask quality assessment. As part of the European Community supported ESPRIT projection 'Q-CAP', a new cluster concept has been developed, which allows the combination of hardware tools as well as software tools via network communication. It is designed to be open for any tool manufacturer and mask hose. The bi-directional network access allows the exchange of all relevant mask data including grayscale images, measurement results, lithography parameters, defect coordinates, layout data, process data etc. and its storage to a SQL database. The system uses SEMI format descriptions as well as standard network hardware and software components for the client server communication. Each tool is used mainly to perform its specific application without using expensive time to perform optional analysis, but the availability of the database allows each component to share the full data ste gathered by all components. Therefore, the cluster can be considered as one single virtual tool. The paper shows the advantage of the cluster approach, the benefits of the tools linked together already, and a vision of a mask house in the near future.

Alternating phase-shifting masks: phase determination and impact of quartz defects--theoretical and experimental results

NASA Astrophysics Data System (ADS)

Griesinger, Uwe A.; Dettmann, Wolfgang; Hennig, Mario; Heumann, Jan P.; Koehle, Roderick; Ludwig, Ralf; Verbeek, Martin; Zarrabian, Mardjan

2002-07-01

In optical lithography balancing the aerial image of an alternating phase shifting mask (alt. PSM) is a major challenge. For the exposure wavelengths (currently 248nm and 193nm) an optimum etching method is necessary to overcome imbalance effects. Defects play an important role in the imbalances of the aerial image. In this contribution defects will be discussed by using the methodology of global phase imbalance control also for local imbalances which are a result of quartz defects. The effective phase error can be determined with an AIMS-system by measuring the CD width between the images of deep- and shallow trenches at different focus settings. The AIMS results are analyzed in comparison to the simulated and lithographic print results of the alternating structures. For the analysis of local aerial image imbalances it is necessary to investigate the capability of detecting these phase defects with state of the art inspection systems. Alternating PSMs containing programmed defects were inspected with different algorithms to investigate the capture rate of special phase defects in dependence on the defect size. Besides inspection also repair of phase defects is an important task. In this contribution we show the effect of repair on the optical behavior of phase defects. Due to the limited accuracy of the repair tools the repaired area still shows a certain local phase error. This error can be caused either by residual quartz material or a substrate damage. The influence of such repair induced phase errors on the aerial image were investigated.

To repair or not to repair: with FAVOR there is no question

NASA Astrophysics Data System (ADS)

Garetto, Anthony; Schulz, Kristian; Tabbone, Gilles; Himmelhaus, Michael; Scheruebl, Thomas

2016-10-01

In the mask shop the challenges associated with today's advanced technology nodes, both technical and economic, are becoming increasingly difficult. The constant drive to continue shrinking features means more masks per device, smaller manufacturing tolerances and more complexity along the manufacturing line with respect to the number of manufacturing steps required. Furthermore, the extremely competitive nature of the industry makes it critical for mask shops to optimize asset utilization and processes in order to maximize their competitive advantage and, in the end, profitability. Full maximization of profitability in such a complex and technologically sophisticated environment simply cannot be achieved without the use of smart automation. Smart automation allows productivity to be maximized through better asset utilization and process optimization. Reliability is improved through the minimization of manual interactions leading to fewer human error contributions and a more efficient manufacturing line. In addition to these improvements in productivity and reliability, extra value can be added through the collection and cross-verification of data from multiple sources which provides more information about our products and processes. When it comes to handling mask defects, for instance, the process consists largely of time consuming manual interactions that are error prone and often require quick decisions from operators and engineers who are under pressure. The handling of defects itself is a multiple step process consisting of several iterations of inspection, disposition, repair, review and cleaning steps. Smaller manufacturing tolerances and features with higher complexity contribute to a higher number of defects which must be handled as well as a higher level of complexity. In this paper the recent efforts undertaken by ZEISS to provide solutions which address these challenges, particularly those associated with defectivity, will be presented. From automation of aerial image analysis to the use of data driven decision making to predict and propose the optimized back end of line process flow, productivity and reliability improvements are targeted by smart automation. Additionally the generation of the ideal aerial image from the design and several repair enhancement features offer additional capabilities to improve the efficiency and yield associated with defect handling.

Automated reticle inspection data analysis for wafer fabs

NASA Astrophysics Data System (ADS)

Summers, Derek; Chen, Gong; Reese, Bryan; Hutchinson, Trent; Liesching, Marcus; Ying, Hai; Dover, Russell

2008-10-01

To minimize potential wafer yield loss due to mask defects, most wafer fabs implement some form of reticle inspection system to monitor photomask quality in high-volume wafer manufacturing environments. Traditionally, experienced operators review reticle defects found by an inspection tool and then manually classify each defect as 'pass, warn, or fail' based on its size and location. However, in the event reticle defects are suspected of causing repeating wafer defects on a completed wafer, potential defects on all associated reticles must be manually searched on a layer-by-layer basis in an effort to identify the reticle responsible for the wafer yield loss. This 'problem reticle' search process is a very tedious and time-consuming task and may cause extended manufacturing line-down situations. Often times, Process Engineers and other team members need to manually investigate several reticle inspection reports to determine if yield loss can be tied to a specific layer. Because of the very nature of this detailed work, calculation errors may occur resulting in an incorrect root cause analysis effort. These delays waste valuable resources that could be spent working on other more productive activities. This paper examines an automated software solution for converting KLA-Tencor reticle inspection defect maps into a format compatible with KLA-Tencor's Klarity DefecTM data analysis database. The objective is to use the graphical charting capabilities of Klarity Defect to reveal a clearer understanding of defect trends for individual reticle layers or entire mask sets. Automated analysis features include reticle defect count trend analysis and potentially stacking reticle defect maps for signature analysis against wafer inspection defect data. Other possible benefits include optimizing reticle inspection sample plans in an effort to support "lean manufacturing" initiatives for wafer fabs.

Methods and devices for fabricating and assembling printable semiconductor elements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Methods and devices for fabricating and assembling printable semiconductor elements

DOEpatents

Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

2014-03-04

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Dynamic mask for producing uniform or graded-thickness thin films

DOEpatents

Folta, James A [Livermore, CA

2006-06-13

A method for producing single layer or multilayer films with high thickness uniformity or thickness gradients. The method utilizes a moving mask which blocks some of the flux from a sputter target or evaporation source before it deposits on a substrate. The velocity and position of the mask is computer controlled to precisely tailor the film thickness distribution. The method is applicable to any type of vapor deposition system, but is particularly useful for ion beam sputter deposition and evaporation deposition; and enables a high degree of uniformity for ion beam deposition, even for near-normal incidence of deposition species, which may be critical for producing low-defect multilayer coatings, such as required for masks for extreme ultraviolet lithography (EUVL). The mask can have a variety of shapes, from a simple solid paddle shape to a larger mask with a shaped hole through which the flux passes. The motion of the mask can be linear or rotational, and the mask can be moved to make single or multiple passes in front of the substrate per layer, and can pass completely or partially across the substrate.

Procedures for dealing with certain types of noise and systematic errors common to many Hadamard transform optical systems

NASA Technical Reports Server (NTRS)

Harwit, M.

1977-01-01

Sources of noise and error correcting procedures characteristic of Hadamard transform optical systems were investigated. Reduction of spectral noise due to noise spikes in the data, the effect of random errors, the relative performance of Fourier and Hadamard transform spectrometers operated under identical detector-noise-limited conditions, and systematic means for dealing with mask defects are among the topics discussed. The distortion in Hadamard transform optical instruments caused by moving Masks, incorrect mask alignment, missing measurements, and diffraction is analyzed and techniques for reducing or eliminating this distortion are described.

Study of residue type defect formation mechanism and the effect of advanced defect reduction (ADR) rinse process

NASA Astrophysics Data System (ADS)

Arima, Hiroshi; Yoshida, Yuichi; Yoshihara, Kosuke; Shibata, Tsuyoshi; Kushida, Yuki; Nakagawa, Hiroki; Nishimura, Yukio; Yamaguchi, Yoshikazu

2009-03-01

Residue type defect is one of yield detractors in lithography process. It is known that occurrence of the residue type defect is dependent on resist development process and the defect is reduced by optimized rinsing condition. However, the defect formation is affected by resist materials and substrate conditions. Therefore, it is necessary to optimize the development process condition by each mask level. Those optimization steps require a large amount of time and effort. The formation mechanism is investigated from viewpoint of both material and process. The defect formation is affected by resist material types, substrate condition and development process condition (D.I.W. rinse step). Optimized resist formulation and new rinse technology significantly reduce the residue type defect.

A Consecutive Spray Printing Strategy to Construct and Integrate Diverse Supercapacitors on Various Substrates.

PubMed

Wang, Xinyu; Lu, Qiongqiong; Chen, Chen; Han, Mo; Wang, Qingrong; Li, Haixia; Niu, Zhiqiang; Chen, Jun

2017-08-30

The rapid development of printable electronic devices with flexible and wearable characteristics requires supercapacitor devices to be printable, light, thin, integrated macro- and micro-devices with flexibility. Herein, we developed a consecutive spray printing strategy to controllably construct and integrate diverse supercapacitors on various substrates. In such a strategy, all supercapacitor components are fully printable, and their thicknesses and shapes are well controlled. As a result, supercapacitors obtained by this strategy achieve diverse structures and shapes. In addition, different nanocarbon and pseudocapacitive materials are applicable for the fabrication of these diverse supercapacitors. Furthermore, the diverse supercapacitors can be readily constructed on various objects with planar, curved, or even rough surfaces (e.g., plastic film, glass, cloth, and paper). More importantly, the consecutive spray printing process can integrate several supercapacitors together in the perpendicular and parallel directions of one substrate by designing the structure of electrodes and separators. This enlightens the construction and integration of fully printable supercapacitors with diverse configurations to be compatible with fully printable electronics on various substrates.

Mask pattern generator employing EPL technology

NASA Astrophysics Data System (ADS)

Yoshioka, Nobuyuki; Yamabe, Masaki; Wakamiya, Wataru; Endo, Nobuhiro

2003-08-01

Mask cost is one of crucial issues in device fabrication, especially in SoC (System on a Chip) with small-volume production. The cost mainly depends on productivity of mask manufacturing tools such as mask writers and defect inspection tools. EPL (Electron Projection Lithography) has been developing as a high-throughput electron beam exposure technology that will succeed optical lithography. The application of EPL technology to mask writing will result in high productivity and contribute to decrease the mask cost. The concept of a mask pattern generator employing EPL technology is proposed in this paper. It is very similar to EPL technology used for pattern printing on a wafer. The mask patterns on the glass substrate are exposed by projecting the basic circuit patterns formed on the mother EPL mask. One example of the mother EPL mask is a stencil type made with 200-mm Si wafer. The basic circuit patterns are IP patterns and logical primitive patterns such as cell libraries (AND, OR, Inverter, Flip-Flop and etc.) to express the SoC device patterns. Since the SoC patterns are exposed with its collective units such as IP and logical primitive patterns by using this method, the high throughput will be expected comparing with conventional mask E-beam writers. In this paper, the mask pattern generator with the EPL technology is proposed. The concept, its advantages and issues to be solved are discussed.

Control of the sidewall angle of an absorber stack using the Faraday cage system for the change of pattern printability in EUVL

NASA Astrophysics Data System (ADS)

Jang, Il-Yong; Huh, Sung-Min; Moon, Seong-Yong; Woo, Sang-Gyun; Lee, Jin-Kwan; Moon, Sang Heup; Cho, HanKu

2008-10-01

A patterned TaN substrate, which is candidate for a mask absorber in extreme ultra-violet lithography (EUVL), was etched to have inclined sidewalls by using a Faraday cage system under the condition of a 2-step process that allowed the high etch selectivity of TaN over the resist. The sidewall angle (SWA) of the patterned substrate, which was in the shape of a parallelogram after etching, could be controlled by changing the slope of a substrate holder that was placed in the Faraday cage. The performance of an EUV mask, which contained the TaN absorber of an oblique pattern over the molybdenum/silicon multi-layer, was simulated for different cases of SWA. The results indicated that the optical properties, such as the critical dimension (CD), an offset in the CD bias between horizontal and vertical patterns (H-V bias), and a shift in the image position on the wafer, could be controlled by changing the SWA of the absorber stack. The simulation result showed that the effect of the SWA on the optical properties became more significant at larger thicknesses of the absorber and smaller sizes of the target CD. Nevertheless, the contrast of the aerial images was not significantly decreased because the shadow effect caused by either sidewall of the patterned substrate cancelled with each other.

Alternating phase-shifted mask for logic gate levels, design, and mask manufacturing

NASA Astrophysics Data System (ADS)

Liebmann, Lars W.; Graur, Ioana C.; Leipold, William C.; Oberschmidt, James M.; O'Grady, David S.; Regaill, Denis

1999-07-01

While the benefits of alternating phase shifted masks in improving lithographic process windows at increased resolution are well known throughout the lithography community, broad implementation of this potentially powerful technique has been slow due to the inherent complexity of the layout design and mask manufacturing process. This paper will review a project undertaken at IBM's Semiconductor Research and Development Center and Mask Manufacturing and Development facility to understand the technical and logistical issues associated with the application of alternating phase shifted mask technology to the gate level of a full microprocessor chip. The work presented here depicts an important milestone toward integration of alternating phase shifted masks into the manufacturing process by demonstrating an automated design solution and yielding a functional alternating phase shifted mask. The design conversion of the microprocessor gate level to a conjugate twin shifter alternating phase shift layout was accomplished with IBM's internal design system that automatically scaled the design, added required phase regions, and resolved phase conflicts. The subsequent fabrication of a nearly defect free phase shifted mask, as verified by SEM based die to die inspection, highlights the maturity of the alternating phase shifted mask manufacturing process in IBM's internal mask facility. Well defined and recognized challenges in mask inspection and repair remain and the layout of alternating phase shifted masks present a design and data preparation overhead, but the data presented here demonstrate the feasibility of designing and building manufacturing quality alternating phase shifted masks for the gate level of a microprocessor.

Automated imprint mask cleaning for step-and-flash imprint lithography

NASA Astrophysics Data System (ADS)

Singh, Sherjang; Chen, Ssuwei; Selinidis, Kosta; Fletcher, Brian; McMackin, Ian; Thompson, Ecron; Resnick, Douglas J.; Dress, Peter; Dietze, Uwe

2009-03-01

Step-and-Flash Imprint Lithography (S-FIL) is a promising lithography strategy for semiconductor manufacturing at device nodes below 32nm. The S-FIL 1:1 pattern transfer technology utilizes a field-by-field ink jet dispense of a low viscosity liquid resist to fill the relief pattern of the device layer etched into the glass mask. Compared to other sub 40nm CD lithography methods, the resulting high resolution, high throughput through clustering, 3D patterning capability, low process complexity, and low cost of ownership (CoO) of S-FIL makes it a widely accepted technology for patterned media as well as a promising mainstream option for future CMOS applications. Preservation of mask cleanliness is essential to avoid risk of repeated printing of defects. The development of mask cleaning processes capable of removing particles adhered to the mask surface without damaging the mask is critical to meet high volume manufacturing requirements. In this paper we have presented various methods of residual (cross-linked) resist removal and final imprint mask cleaning demonstrated on the HamaTech MaskTrack automated mask cleaning system. Conventional and non-conventional (acid free) methods of particle removal have been compared and the effect of mask cleaning on pattern damage and CD integrity is also studied.

Integration of Peptides into Organic Thin Film Transistor (OTFT)-based Printable Sensors

DTIC Science & Technology

2017-02-10

AFRL-AFOSR-JP-TR-2017-0009 Integration of Peptides into Organic Thin Film Transistor (OTFT)-based Printable Sensors Paul Dastoor UNIVERSITY OF...collection of information   if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ORGANIZATION . 1...Peptides into Organic Thin Film Transistor (OTFT)-based Printable Sensors 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-15-1-4002 5c.  PROGRAM ELEMENT

Development of high sensitivity and high speed large size blank inspection system LBIS

NASA Astrophysics Data System (ADS)

Ohara, Shinobu; Yoshida, Akinori; Hirai, Mitsuo; Kato, Takenori; Moriizumi, Koichi; Kusunose, Haruhiko

2017-07-01

The production of high-resolution flat panel displays (FPDs) for mobile phones today requires the use of high-quality large-size photomasks (LSPMs). Organic light emitting diode (OLED) displays use several transistors on each pixel for precise current control and, as such, the mask patterns for OLED displays are denser and finer than the patterns for the previous generation displays throughout the entire mask surface. It is therefore strongly demanded that mask patterns be produced with high fidelity and free of defect. To enable the production of a high quality LSPM in a short lead time, the manufacturers need a high-sensitivity high-speed mask blank inspection system that meets the requirement of advanced LSPMs. Lasertec has developed a large-size blank inspection system called LBIS, which achieves high sensitivity based on a laser-scattering technique. LBIS employs a high power laser as its inspection light source. LBIS's delivery optics, including a scanner and F-Theta scan lens, focus the light from the source linearly on the surface of the blank. Its specially-designed optics collect the light scattered by particles and defects generated during the manufacturing process, such as scratches, on the surface and guide it to photo multiplier tubes (PMTs) with high efficiency. Multiple PMTs are used on LBIS for the stable detection of scattered light, which may be distributed at various angles due to irregular shapes of defects. LBIS captures 0.3mμ PSL at a detection rate of over 99.5% with uniform sensitivity. Its inspection time is 20 minutes for a G8 blank and 35 minutes for G10. The differential interference contrast (DIC) microscope on the inspection head of LBIS captures high-contrast review images after inspection. The images are classified automatically.

Epitaxial lateral overgrowth of InP on Si from nano-openings: Theoretical and experimental indication for defect filtering throughout the grown layer

NASA Astrophysics Data System (ADS)

Olsson, F.; Xie, M.; Lourdudoss, S.; Prieto, I.; Postigo, P. A.

2008-11-01

We present a model for the filtration of dislocations inside the seed window in epitaxial lateral overgrowth (ELO). We found that, when the additive effects of image and gliding forces exceed the defect line tension force, filtering can occur even in the openings. The model is applied to ELO of InP on Si where the opening size and the thermal stress arising due to the mask and the grown material are taken into account and analyzed. Further, we have also designed the mask patterns in net structures, where the tilting angles of the openings in the nets are chosen in order to take advantage of the filtering in the openings more effectively, and to minimize new defects due to coalescence in the ELO. Photoluminescence intensities of ELO InP on Si and on InP are compared and found to be in qualitative agreement with the model.

Fabrication of In(0.75)Zn(1.5)Sn(1.0) (IZTO) Thin-Film Transistors Using Solution-Processable Materials and PZT Inkjet-Printing.

PubMed

Lee, Tai-Kuang; Liuand, Chao-Te; Lee, Wen-Hsi

2017-01-01

Recently, Thin Film Transistors (TFTs) have been studied widely because of potential applications in low cost, low-temperature process and flexible displays. They can be fabricated by easy processes based on solution methods. But the mobility of organic TFTs is lower and the threshold voltage is higher than amorphous Si TFTs. In order to enhance the channel mobility and satisfy with the requirement of low-cost fabrication, we prepare a low-cost, mask-free, reduced material wastage, deposited technology using transparent, directly printable, air-stable semiconductor slurries and dielectric solutions. In our investigations, we attempt to obtain a high performance and low-cost TFT via preparing materials, designing device structure, and using PZT inkjet-printing technology. A stable and non-precipitated metal oxide ink with appropriate doping was prepared for the fabrication of an InxZn1.5Sn1.0 (IZTO) by PZT inkjet-printing. The soluble direct-printing process is a powerful tool for material research and implies that the printable materials and the printing technology enable the use of all-printed low-cost flexible displays and other transparent electronic applications. Transparent materials including dielectric PVP, conductive carbon nanotube (CNT) and active IZTO were employed into the fabrication of our PZT inkjet-printing process. After annealed at 180 °C, The experimental all-printed TFT exhibit the carrier mobility of 0.194 cm2/Vs, sub-threshold slope of 20 V/decade, and the threshold voltage of 5 V, initially. All-inkjet-printed films have great transparency, potentially in transparent electronics and the transmittance pattern in visible part of the spectrum (400–700 nm) is over 80%.

Scatterometry on pelliclized masks: an option for wafer fabs

NASA Astrophysics Data System (ADS)

Gallagher, Emily; Benson, Craig; Higuchi, Masaru; Okumoto, Yasuhiro; Kwon, Michael; Yedur, Sanjay; Li, Shifang; Lee, Sangbong; Tabet, Milad

2007-03-01

Optical scatterometry-based metrology is now widely used in wafer fabs for lithography, etch, and CMP applications. This acceptance of a new metrology method occurred despite the abundance of wellestablished CD-SEM and AFM methods. It was driven by the desire to make measurements faster and with a lower cost of ownership. Over the last year, scatterometry has also been introduced in advanced mask shops for mask measurements. Binary and phase shift masks have been successfully measured at all desired points during photomask production before the pellicle is mounted. There is a significant benefit to measuring masks with the pellicle in place. From the wafer fab's perspective, through-pellicle metrology would verify mask effects on the same features that are characterized on wafer. On-site mask verification would enable quality control and trouble-shooting without returning the mask to a mask house. Another potential application is monitoring changes to mask films once the mask has been delivered to the fab (haze, oxide growth, etc.). Similar opportunities apply to the mask metrologist receiving line returns from a wafer fab. The ability to make line-return measurements without risking defect introduction is clearly attractive. This paper will evaluate the feasibility of collecting scatterometry data on pelliclized masks. We explore the effects of several different pellicle types on scatterometry measurements made with broadband light in the range of 320-780 nm. The complexity introduced by the pellicles' optical behavior will be studied.

High-speed atomic force microscopy and peak force tapping control

NASA Astrophysics Data System (ADS)

Hu, Shuiqing; Mininni, Lars; Hu, Yan; Erina, Natalia; Kindt, Johannes; Su, Chanmin

2012-03-01

ITRS Roadmap requires defect size measurement below 10 nanometers and challenging classifications for both blank and patterned wafers and masks. Atomic force microscope (AFM) is capable of providing metrology measurement in 3D at sub-nanometer accuracy but has long suffered from drawbacks in throughput and limitation of slow topography imaging without chemical information. This presentation focus on two disruptive technology developments, namely high speed AFM and quantitative nanomechanical mapping, which enables high throughput measurement with capability of identifying components through concurrent physical property imaging. The high speed AFM technology has allowed the imaging speed increase by 10-100 times without loss of the data quality. Such improvement enables the speed of defect review on a wafer to increase from a few defects per hour to nearly 100 defects an hour, approaching the requirements of ITRS Roadmap. Another technology development, Peak Force Tapping, substantially simplified the close loop system response, leading to self-optimization of most challenging samples groups to generate expert quality data. More importantly, AFM also simultaneously provides a series of mechanical property maps with a nanometer spatial resolution during defect review. These nanomechanical maps (including elastic modulus, hardness, and surface adhesion) provide complementary information for elemental analysis, differentiate defect materials by their physical properties, and assist defect classification beyond topographic measurements. This paper will explain the key enabling technologies, namely high speed tip-scanning AFM using innovative flexure design and control algorithm. Another critical element is AFM control using Peak Force Tapping, in which the instantaneous tip-sample interaction force is measured and used to derive a full suite of physical properties at each imaging pixel. We will provide examples of defect review data on different wafers and media disks. The similar AFM-based defect review capacity was also applied to EUV masks.

Complex Pupil Masks for Aberrated Imaging of Closely Spaced Objects

NASA Astrophysics Data System (ADS)

Reddy, A. N. K.; Sagar, D. K.; Khonina, S. N.

2017-12-01

Current approach demonstrates the suppression of optical side-lobes and the contraction of the main lobe in the composite image of two object points of the optical system under the influence of defocusing effect when an asymmetric phase edges are imposed over the apodized circular aperture. The resolution of two point sources having different intensity ratio is discussed in terms of the modified Sparrow criterion, functions of the degree of coherence of the illumination, the intensity difference and the degree of asymmetric phase masking. Here we have introduced and explored the effects of focus aberration (defect-of-focus) on the two-point resolution of the optical systems. Results on the aberrated composite image of closely spaced objects with amplitude mask and asymmetric phase masks forms a significant contribution in astronomical and microscopic observations.

EUV mask pilot line at Intel Corporation

NASA Astrophysics Data System (ADS)

Stivers, Alan R.; Yan, Pei-Yang; Zhang, Guojing; Liang, Ted; Shu, Emily Y.; Tejnil, Edita; Lieberman, Barry; Nagpal, Rajesh; Hsia, Kangmin; Penn, Michael; Lo, Fu-Chang

2004-12-01

The introduction of extreme ultraviolet (EUV) lithography into high volume manufacturing requires the development of a new mask technology. In support of this, Intel Corporation has established a pilot line devoted to encountering and eliminating barriers to manufacturability of EUV masks. It concentrates on EUV-specific process modules and makes use of the captive standard photomask fabrication capability of Intel Corporation. The goal of the pilot line is to accelerate EUV mask development to intersect the 32nm technology node. This requires EUV mask technology to be comparable to standard photomask technology by the beginning of the silicon wafer process development phase for that technology node. The pilot line embodies Intel's strategy to lead EUV mask development in the areas of the mask patterning process, mask fabrication tools, the starting material (blanks) and the understanding of process interdependencies. The patterning process includes all steps from blank defect inspection through final pattern inspection and repair. We have specified and ordered the EUV-specific tools and most will be installed in 2004. We have worked with International Sematech and others to provide for the next generation of EUV-specific mask tools. Our process of record is run repeatedly to ensure its robustness. This primes the supply chain and collects information needed for blank improvement.

High resolution printing of charge

DOEpatents

Rogers, John; Park, Jang-Ung

2015-06-16

Provided are methods of printing a pattern of charge on a substrate surface, such as by electrohydrodynamic (e-jet) printing. The methods relate to providing a nozzle containing a printable fluid, providing a substrate having a substrate surface and generating from the nozzle an ejected printable fluid containing net charge. The ejected printable fluid containing net charge is directed to the substrate surface, wherein the net charge does not substantially degrade and the net charge retained on the substrate surface. Also provided are functional devices made by any of the disclosed methods.

Plasma cleaning of nanoparticles from EUV mask materials by electrostatics

NASA Astrophysics Data System (ADS)

Lytle, W. M.; Raju, R.; Shin, H.; Das, C.; Neumann, M. J.; Ruzic, D. N.

2008-03-01

Particle contamination on surfaces used in extreme ultraviolet (EUV) mask blank deposition, mask fabrication, and patterned mask handling must be avoided since the contamination can create significant distortions and loss of reflectivity. Particles on the order of 10nm are problematic during MLM mirror fabrication, since the introduced defects disrupt the local Bragg planes. The most serious problem is the accumulation of particles on surfaces of patterned blanks during EUV light exposure, since > 25nm particles will be printed without an out-of-focus pellicle. Particle contaminants are also a problem with direct imprint processes since defects are printed every time. Plasma Assisted Cleaning by Electrostatics (PACE) works by utilizing a helicon plasma as well as a pulsed DC substrate bias to charge particle and repel them electrostatically from the surface. Removal of this nature is a dry cleaning method and removes contamination perpendicular from the surface instead of rolling or sweeping the particles off the surface, a benefit when cleaning patterned surfaces where contamination can be rolled or trapped between features. Also, an entire mask can be cleaned at once since the plasma can cover the entire surface, thus there is no need to focus in on an area to clean. Sophisticated particle contamination detection system utilizing high power laser called DEFCON is developed to analyze the particle removal after PACE cleaning process. PACE has shown greater than 90 % particle removal efficiencies for 30 to 220 nm PSL particles on ruthenium capped quartz. Removal results for silicon surfaces and quartz surfaces show similar removal efficiencies. Results of cleaning 80 nm PSL spheres from silicon substrates will be shown.

Printable elastic conductors by in situ formation of silver nanoparticles from silver flakes

NASA Astrophysics Data System (ADS)

Matsuhisa, Naoji; Inoue, Daishi; Zalar, Peter; Jin, Hanbit; Matsuba, Yorishige; Itoh, Akira; Yokota, Tomoyuki; Hashizume, Daisuke; Someya, Takao

2017-08-01

Printable elastic conductors promise large-area stretchable sensor/actuator networks for healthcare, wearables and robotics. Elastomers with metal nanoparticles are one of the best approaches to achieve high performance, but large-area utilization is limited by difficulties in their processability. Here we report a printable elastic conductor containing Ag nanoparticles that are formed in situ, solely by mixing micrometre-sized Ag flakes, fluorine rubbers, and surfactant. Our printable elastic composites exhibit conductivity higher than 4,000 S cm-1 (highest value: 6,168 S cm-1) at 0% strain, and 935 S cm-1 when stretched up to 400%. Ag nanoparticle formation is influenced by the surfactant, heating processes, and elastomer molecular weight, resulting in a drastic improvement of conductivity. Fully printed sensor networks for stretchable robots are demonstrated, sensing pressure and temperature accurately, even when stretched over 250%.

Particle contamination effects in EUVL: enhanced theory for the analytical determination of critical particle sizes

NASA Astrophysics Data System (ADS)

Brandstetter, Gerd; Govindjee, Sanjay

2012-03-01

Existing analytical and numerical methodologies are discussed and then extended in order to calculate critical contamination-particle sizes, which will result in deleterious effects during EUVL E-chucking in the face of an error budget on the image-placement-error (IPE). The enhanced analytical models include a gap dependant clamping pressure formulation, the consideration of a general material law for realistic particle crushing and the influence of frictional contact. We present a discussion of the defects of the classical de-coupled modeling approach where particle crushing and mask/chuck indentation are separated from the global computation of mask bending. To repair this defect we present a new analytic approach based on an exact Hankel transform method which allows a fully coupled solution. This will capture the contribution of the mask indentation to the image-placement-error (estimated IPE increase of 20%). A fully coupled finite element model is used to validate the analytical models and to further investigate the impact of a mask back-side CrN-layer. The models are applied to existing experimental data with good agreement. For a standard material combination, a given IPE tolerance of 1 nm and a 15 kPa closing pressure, we derive bounds for single particles of cylindrical shape (radius × height < 44 μm) and spherical shape (diameter < 12 μm).

Fully Packaged Carbon Nanotube Supercapacitors by Direct Ink Writing on Flexible Substrates.

PubMed

Chen, Bolin; Jiang, Yizhou; Tang, Xiaohui; Pan, Yayue; Hu, Shan

2017-08-30

The ability to print fully packaged integrated energy storage components (e.g., supercapacitors) is of critical importance for practical applications of printed electronics. Due to the limited variety of printable materials, most studies on printed supercapacitors focus on printing the electrode materials but rarely the full-packaged cell. This work presents for the first time the printing of a fully packaged single-wall carbon nanotube-based supercapacitor with direct ink writing (DIW) technology. Enabled by the developed ink formula, DIW setup, and cell architecture, the whole printing process is mask free, transfer free, and alignment free with precise and repeatable control on the spatial distribution of all constituent materials. Studies on cell design show that a wider electrode pattern and narrower gap distance between electrodes lead to higher specific capacitance. The as-printed fully packaged supercapacitors have energy and power performances that are among the best in recently reported planar carbon-based supercapacitors that are only partially printed or nonprinted.

Status of EUVL mask development in Europe (Invited Paper)

NASA Astrophysics Data System (ADS)

Peters, Jan H.

2005-06-01

EUV lithography is the prime candidate for the next generation lithography technology after 193 nm immersion lithography. The commercial onset for this technology is expected for the 45 nm half-pitch technology or below. Several European and national projects and quite a large number of companies and research institutions in Europe work on various aspects of the technological challenges to make EUV a commercially viable technology in the not so far future. Here the development of EUV sources, the development of an EUV exposure tools, metrology tools dedicated for characterization of mask, the production of EUV mask blanks and the mask structuring itself are the key areas in which major activities can be found. In this talk we will primarily focus on those activities, which are related to establish an EUV mask supply chain with all its ingredients from substrate production, polishing, deposition of EUV layers, blank characterization, mask patterning process and the consecutive metrology and defect inspection as well as shipping and handling from blank supply to usage in the wafer fab. The EUV mask related projects on the national level are primarily supported by the French Ministry of Economics and Finance (MinEFi) and the German Ministry of Education and Research (BMBF).

Optical inspection system for cylindrical objects

DOEpatents

Brenden, Byron B.; Peters, Timothy J.

1989-01-01

In the inspection of cylindrical objects, particularly O-rings, the object is translated through a field of view and a linear light trace is projected on its surface. An image of the light trace is projected on a mask, which has a size and shape corresponding to the size and shape which the image would have if the surface of the object were perfect. If there is a defect, light will pass the mask and be sensed by a detector positioned behind the mask. Preferably, two masks and associated detectors are used, one mask being convex to pass light when the light trace falls on a projection from the surface and the other concave, to pass light when the light trace falls on a depression in the surface. The light trace may be either dynamic, formed by a scanned laser beam, or static, formed by such a beam focussed by a cylindrical lens. Means are provided to automatically keep the illuminating receiving systems properly aligned.

Sodium phenylbutyrate coated granules (Pheburane). Defective urea synthesis: a welcome formulation.

PubMed

2015-02-01

Compared with Ammonaps granules, Pheburane coated granules mask the unpleasant taste of sodium phenylbutyrate. A more precise dosing device is provided with the coated granules than with the uncoated granules (Ammonaps).

Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer

DOEpatents

Cardinale, Gregory F.

2002-01-01

A method for fabricating masks for extreme ultraviolet lithography (EUVL) using Ultra-Low Expansion (ULE) substrates and crystalline silicon. ULE substrates are required for the necessary thermal management in EUVL mask blanks, and defect detection and classification have been obtained using crystalline silicon substrate materials. Thus, this method provides the advantages for both the ULE substrate and the crystalline silicon in an Extreme Ultra-Violet (EUV) mask blank. The method is carried out by bonding a crystalline silicon wafer or member to a ULE wafer or substrate and thinning the silicon to produce a 5-10 .mu.m thick crystalline silicon layer on the surface of the ULE substrate. The thinning of the crystalline silicon may be carried out, for example, by chemical mechanical polishing and if necessary or desired, oxidizing the silicon followed by etching to the desired thickness of the silicon.

Understanding EUV mask blank surface roughness induced LWR and associated roughness requirement

NASA Astrophysics Data System (ADS)

Yan, Pei-Yang; Zhang, Guojing; Gullikson, Eric M.; Goldberg, Ken A.; Benk, Markus P.

2015-03-01

Extreme ultraviolet lithography (EUVL) mask multi-layer (ML) blank surface roughness specification historically comes from blank defect inspection tool requirement. Later, new concerns on ML surface roughness induced wafer pattern line width roughness (LWR) arise. In this paper, we have studied wafer level pattern LWR as a function of EUVL mask surface roughness via High-NA Actinic Reticle Review Tool. We found that the blank surface roughness induced LWR at current blank roughness level is in the order of 0.5nm 3σ for NA=0.42 at the best focus. At defocus of ±40nm, the corresponding LWR will be 0.2nm higher. Further reducing EUVL mask blank surface roughness will increase the blank cost with limited benefit in improving the pattern LWR, provided that the intrinsic resist LWR is in the order of 1nm and above.

Effect of bioink properties on printability and cell viability for 3D bioplotting of embryonic stem cells.

PubMed

Ouyang, Liliang; Yao, Rui; Zhao, Yu; Sun, Wei

2016-09-16

3D cell printing is an emerging technology for fabricating complex cell-laden constructs with precise and pre-designed geometry, structure and composition to overcome the limitations of 2D cell culture and conventional tissue engineering scaffold technology. This technology enables spatial manipulation of cells and biomaterials, also referred to as 'bioink', and thus allows study of cellular interactions in a 3D microenvironment and/or in the formation of functional tissues and organs. Recently, many efforts have been made to develop new bioinks and to apply more cell sources for better biocompatibility and biofunctionality. However, the influences of printing parameters on the shape fidelity of 3D constructs as well as on cell viability after the cell printing process have been poorly characterized. Furthermore, parameter optimization based on a specific cell type might not be suitable for other types of cells, especially cells with high sensibility. In this study, we systematically studied the influence of bioink properties and printing parameters on bioink printability and embryonic stem cell (ESC) viability in the process of extrusion-based cell printing, also known as bioplotting. A novel method was established to determine suitable conditions for bioplotting ESCs to achieve both good printability and high cell viability. The rheological properties of gelatin/alginate bioinks were evaluated to determine the gelation properties under different bioink compositions, printing temperatures and holding times. The bioink printability was characterized by a newly developed semi-quantitative method. The results demonstrated that bioinks with longer gelation times would result in poorer printability. The live/dead assay showed that ESC viability increased with higher printing temperatures and lower gelatin concentrations. Furthermore, an exponential relationship was obtained between ESC viability and induced shear stress. By defining the proper printability and acceptable viability ranges, a combined parameters region was obtained. This study provides guidance for parameter optimization and the fine-tuning of 3D cell printing processes regarding both bioink printability and cell viability after bioplotting, especially for easily damaged cells, like ESCs.

Custom 3D Printable Silicones with Tunable Stiffness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Durban, Matthew M.; Lenhardt, Jeremy M.; Wu, Amanda S.

Silicone elastomers have broad versatility within a variety of potential advanced materials applications, such as soft robotics, biomedical devices, and metamaterials. Furthermore, a series of custom 3D printable silicone inks with tunable stiffness is developed, formulated, and characterized. The silicone inks exhibit excellent rheological behavior for 3D printing, as observed from the printing of porous structures with controlled architectures. Here, the capability to tune the stiffness of printable silicone materials via careful control over the chemistry, network formation, and crosslink density of the ink formulations in order to overcome the challenging interplay between ink development, post-processing, material properties, and performancemore » is demonstrated.« less

Custom 3D Printable Silicones with Tunable Stiffness

DOE PAGES

Durban, Matthew M.; Lenhardt, Jeremy M.; Wu, Amanda S.; ...

2017-12-06

Silicone elastomers have broad versatility within a variety of potential advanced materials applications, such as soft robotics, biomedical devices, and metamaterials. Furthermore, a series of custom 3D printable silicone inks with tunable stiffness is developed, formulated, and characterized. The silicone inks exhibit excellent rheological behavior for 3D printing, as observed from the printing of porous structures with controlled architectures. Here, the capability to tune the stiffness of printable silicone materials via careful control over the chemistry, network formation, and crosslink density of the ink formulations in order to overcome the challenging interplay between ink development, post-processing, material properties, and performancemore » is demonstrated.« less

Photomask quality evaluation using lithography simulation and precision SEM image contour data

NASA Astrophysics Data System (ADS)

Murakawa, Tsutomu; Fukuda, Naoki; Shida, Soichi; Iwai, Toshimichi; Matsumoto, Jun; Nakamura, Takayuki; Hagiwara, Kazuyuki; Matsushita, Shohei; Hara, Daisuke; Adamov, Anthony

2012-11-01

To evaluate photomask quality, the current method uses spatial imaging by optical inspection tools. This technique at 1Xnm node has a resolution limit because small defects will be difficult to extract. To simulate the mask error-enhancement factor (MEEF) influence for aggressive OPC in 1Xnm node, wide FOV contour data and tone information are derived from high precision SEM images. For this purpose we have developed a new contour data extraction algorithm with sub-nanometer accuracy resulting in a wide Field of View (FOV) SEM image: (for example, more than 10um x 10um square). We evaluated MEEF influence of high-end photomask pattern using the wide FOV contour data of "E3630 MVM-SEMTM" and lithography simulator "TrueMaskTM DS" of D2S, Inc. As a result, we can detect the "invisible defect" as the MEEF influence using the wide FOV contour data and lithography simulator.

An improved algorithm of mask image dodging for aerial image

NASA Astrophysics Data System (ADS)

Zhang, Zuxun; Zou, Songbai; Zuo, Zhiqi

2011-12-01

The technology of Mask image dodging based on Fourier transform is a good algorithm in removing the uneven luminance within a single image. At present, the difference method and the ratio method are the methods in common use, but they both have their own defects .For example, the difference method can keep the brightness uniformity of the whole image, but it is deficient in local contrast; meanwhile the ratio method can work better in local contrast, but sometimes it makes the dark areas of the original image too bright. In order to remove the defects of the two methods effectively, this paper on the basis of research of the two methods proposes a balance solution. Experiments show that the scheme not only can combine the advantages of the difference method and the ratio method, but also can avoid the deficiencies of the two algorithms.

Monte Carlo sensitivity analysis of EUV mask reflectivity and its impact on OPC accuracy

NASA Astrophysics Data System (ADS)

Chen, Yulu; Wood, Obert; Rankin, Jed; Gullikson, Eric; Meyer-Ilse, Julia; Sun, Lei; Qi, Zhengqing John; Goodwin, Francis; Kye, Jongwook

2017-03-01

Unlike optical masks which are transmissive optical elements, use of extreme ultraviolet (EUV) radiation requires a reflective mask structure - a multi-layer coating consisting of alternating layers of high-Z (wave impedance) and low-Z materials that provide enhanced reflectivity over a narrow wavelength band peaked at the Bragg wavelength.1 Absorber side wall angle, corner rounding,2 surface roughness,3 and defects4 affect mask performance, but even seemingly simple parameters like bulk reflectivity on mirror and absorber surfaces can have a profound influence on imaging. For instance, using inaccurate reflectivity values at small and large incident angles would diminish the benefits of source mask co-optimization (SMO) and result in larger than expected pattern shifts. The goal of our work is to calculate the variation in mask reflectivity due to various sources of inaccuracies using Monte Carlo simulations. Such calculation is necessary as small changes in the thickness and optical properties of the high-Z and low-Z materials can cause substantial variations in reflectivity. This is further complicated by undesirable intermixing between the two materials used to create the reflector.5 One of the key contributors to mask reflectivity fluctuation is identified to be the intermixing layer thickness. We also investigate the impacts on OPC when the wrong mask information is provided, and evaluate the deterioration of overlapping process window. For a hypothetical N7 via layer, the lack of accurate mask information costs 25% of the depth of focus at 5% exposure latitude. Our work would allow the determination of major contributors to mask reflectivity variation, drive experimental efforts of measuring such contributors, provide strategies to optimize mask reflectivity, and quantize the OPC errors due to imperfect mask modeling.

Ultra-low roughness magneto-rheological finishing for EUV mask substrates

NASA Astrophysics Data System (ADS)

Dumas, Paul; Jenkins, Richard; McFee, Chuck; Kadaksham, Arun J.; Balachandran, Dave K.; Teki, Ranganath

2013-09-01

EUV mask substrates, made of titania-doped fused silica, ideally require sub-Angstrom surface roughness, sub-30 nm flatness, and no bumps/pits larger than 1 nm in height/depth. To achieve the above specifications, substrates must undergo iterative global and local polishing processes. Magnetorheological finishing (MRF) is a local polishing technique which can accurately and deterministically correct substrate figure, but typically results in a higher surface roughness than the current requirements for EUV substrates. We describe a new super-fine MRF® polishing fluid whichis able to meet both flatness and roughness specifications for EUV mask blanks. This eases the burden on the subsequent global polishing process by decreasing the polishing time, and hence the defectivity and extent of figure distortion.

Reticle haze: an industrial approach

NASA Astrophysics Data System (ADS)

Gough, Stuart; Gérard, Xavier; Bichebois, Pascal; Roche, Agnès; Sundermann, Frank; Guyader, Véronique; Bièron, Yann; Galvier, Jean; Nicoleau, Serge

2007-02-01

Crystal growth on advanced reticles is currently a world wide industrial problem in high end semiconductor production environment, crystals are mainly found on reticles that use high energy photons at 193nm wavelength. The most common crystals to be found on masks are ammonium sulphate, a combination of sulphate, from maskshop residues after clean, pellicle materials and storage conditions and amines from clean room, tool and storage environments. High energy photons act as a catalyst to form crystals on both the pattern side as well as the backglass surface. After a number of exposures crystals can grow in size and eventually become printable. In order to detect HAZE before critical dimensions have been reached suitable detection methods need to be implemented to ensure image integrity. These detection methods are different and complementary depending on the surface to be inspected. Once crystals have started growing, the only method to regain mask quality is to clean the mask at the manufacturers site. This brings with it several undesirable situations, not only is the mask unavailable for production but the cleaning of a mask leads to a potential risk of damaging the mask especially for sub resolution patterns such as scatter bars and phase and transmission changes for eaPSM (Embedded Attenuated Phase Shift Mask) masks. This paper will discuss the initial haze issues seen in a 300mm wafer fab and actions put in place to address the problem. An explanation of results gained from haze reduction actions implemented in a wafer fab will be given. Haze seen by reticle inspection and surface analysis tools can be characterised by typical contamination patterns. These signatures appear after a certain number of wafers exposed depending on several reticle variables such as transmission, Binary, eaPSM, Pellicle. Details will be given of how reticles are managed to ensure minimum impact to a production environment with an appropriate reticle control plan. AMC (Airborne Molecular Contamination) in wafer fab and equipment environment is a key factor for crystal growth. The type of filtration installed to reduce AMC and method of atmospheric monitoring for critical areas will be explained. Choice of reticle storage conditions and materials used for transport during the life of the reticle will be included. Improvements in maskshop cleaning processes, reticle materials and environmental control have lead to extended mask lifetime in the wafer fab of more than 20 times. The fundamental differences and relative monitoring will be described and gain from implemented actions will be presented Once crystals have started growing, the only method to regain mask quality is to clean the mask at the manufacturers site. This brings with it several undesirable situations, not only is the mask unavailable for production but the cleaning of a mask leads to a potential risk of damaging the mask especially for sub resolution patterns such as scatter bars and phase and transmission changes for eaPSM (Embedded Attenuated Phase Shift Mask) masks. This paper will discuss the initial haze issues seen in a 300mm wafer fab and actions put in place to address the problem. An explanation of results gained from haze reduction actions implemented in a wafer fab will be given. Haze seen by reticle inspection and surface analysis tools can be characterised by typical contamination patterns. These signatures appear after a certain number of wafers exposed depending on several reticle variables such as transmission, Binary, eaPSM, Pellicle. Details will be given of how reticles are managed to ensure minimum impact to a production environment with an appropriate reticle control plan. AMC (Airborne Molecular Contamination) in wafer fab and equipment environment is a key factor for crystal growth. The type of filtration installed to reduce AMC and method of atmospheric monitoring for critical areas will be explained. Choice of reticle storage conditions and materials used for transport during the life of the reticle will be included. Improvements in maskshop cleaning processes, reticle materials and environmental control have lead to extended mask lifetime in the wafer fab of more than 20 times. The fundamental differences and relative monitoring will be described and gain from implemented actions will be presented

Edge effects in phase-shifting masks for 0.25-µm lithography

NASA Astrophysics Data System (ADS)

Wong, Alfred K. K.; Neureuther, Andrew R.

1993-03-01

The impact on image quality of scattering from phase-shifter edges and of interactions between phase-shifter and chrome edges is assessed using rigorous electromagnetic simulation. Effects of edge taper in phase-shift masks, spacing between phase-shifter and chrome edges, small outrigger features with a trench phase-shifter, and of the repair of phase defects by etching to 360 degree(s) are considered. Near field distributions and diffraction efficiencies are examined and images are compared with more approximate results from the commonly used Hopkins' theory of imaging.

Custom 3D Printable Silicones with Tunable Stiffness.

PubMed

Durban, Matthew M; Lenhardt, Jeremy M; Wu, Amanda S; Small, Ward; Bryson, Taylor M; Perez-Perez, Lemuel; Nguyen, Du T; Gammon, Stuart; Smay, James E; Duoss, Eric B; Lewicki, James P; Wilson, Thomas S

2018-02-01

Silicone elastomers have broad versatility within a variety of potential advanced materials applications, such as soft robotics, biomedical devices, and metamaterials. A series of custom 3D printable silicone inks with tunable stiffness is developed, formulated, and characterized. The silicone inks exhibit excellent rheological behavior for 3D printing, as observed from the printing of porous structures with controlled architectures. Herein, the capability to tune the stiffness of printable silicone materials via careful control over the chemistry, network formation, and crosslink density of the ink formulations in order to overcome the challenging interplay between ink development, post-processing, material properties, and performance is demonstrated. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Printable semiconductor structures and related methods of making and assembling

DOEpatents

Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang; , Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn

2013-03-12

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Printable semiconductor structures and related methods of making and assembling

DOEpatents

Nuzzo, Ralph G [Champaign, IL; Rogers, John A [Champaign, IL; Menard, Etienne [Durham, NC; Lee, Keon Jae [Tokyo, JP; Khang, Dahl-Young [Urbana, IL; Sun, Yugang [Westmont, IL; Meitl, Matthew [Raleigh, NC; Zhu, Zhengtao [Rapid City, SD; Ko, Heung Cho [Urbana, IL; Mack, Shawn [Goleta, CA

2011-10-18

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Printable semiconductor structures and related methods of making and assembling

DOEpatents

Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn

2010-09-21

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Massively parallel E-beam inspection: enabling next-generation patterned defect inspection for wafer and mask manufacturing

NASA Astrophysics Data System (ADS)

Malloy, Matt; Thiel, Brad; Bunday, Benjamin D.; Wurm, Stefan; Mukhtar, Maseeh; Quoi, Kathy; Kemen, Thomas; Zeidler, Dirk; Eberle, Anna Lena; Garbowski, Tomasz; Dellemann, Gregor; Peters, Jan Hendrik

2015-03-01

SEMATECH aims to identify and enable disruptive technologies to meet the ever-increasing demands of semiconductor high volume manufacturing (HVM). As such, a program was initiated in 2012 focused on high-speed e-beam defect inspection as a complement, and eventual successor, to bright field optical patterned defect inspection [1]. The primary goal is to enable a new technology to overcome the key gaps that are limiting modern day inspection in the fab; primarily, throughput and sensitivity to detect ultra-small critical defects. The program specifically targets revolutionary solutions based on massively parallel e-beam technologies, as opposed to incremental improvements to existing e-beam and optical inspection platforms. Wafer inspection is the primary target, but attention is also being paid to next generation mask inspection. During the first phase of the multi-year program multiple technologies were reviewed, a down-selection was made to the top candidates, and evaluations began on proof of concept systems. A champion technology has been selected and as of late 2014 the program has begun to move into the core technology maturation phase in order to enable eventual commercialization of an HVM system. Performance data from early proof of concept systems will be shown along with roadmaps to achieving HVM performance. SEMATECH's vision for moving from early-stage development to commercialization will be shown, including plans for development with industry leading technology providers.

A Facile Methodology for the Development of a Printable and Flexible All-Solid-State Rechargeable Battery.

PubMed

De, Bibekananda; Yadav, Amit; Khan, Salman; Kar, Kamal K

2017-06-14

Development of printable and flexible energy storage devices is one of the most promising technologies for wearable electronics in textile industry. The present work involves the design of a printable and flexible all-solid-state rechargeable battery for wearable electronics in textile applications. Copper-coated carbon fiber is used to make a poly(ethylene oxide) (PEO)-based polymer nanocomposite for a flexible and conductive current collector layer. Lithium iron phosphate (LiFePO 4 ) and titanium dioxide (TiO 2 ) are utilized to prepare the cathode and anode layers, respectively, with PEO and carbon black composites. The PEO- and Li salt-based solid composite separator layer is utilized for the solid-state and safe electrolyte. Fabrication of all these layers and assembly of them through coating on fabrics are performed in the open atmosphere without using any complex processing, as PEO prevents the degradation of the materials in the open atmosphere. The performance of the battery is evaluated through charge-discharge and open-circuit voltage analyses. The battery shows an open-circuit voltage of ∼2.67 V and discharge time ∼2000 s. It shows similar performance at different repeated bending angles (0° to 180°) and continuous bending along with long cycle life. The application of the battery is also investigated for printable and wearable textile applications. Therefore, this printable, flexible, easily processable, and nontoxic battery with this performance has great potential to be used in portable and wearable textile electronics.

Protection efficiency of a standard compliant EUV reticle handling solution

NASA Astrophysics Data System (ADS)

He, Long; Lystad, John; Wurm, Stefan; Orvek, Kevin; Sohn, Jaewoong; Ma, Andy; Kearney, Patrick; Kolbow, Steve; Halbmaier, David

2009-03-01

For successful implementation of extreme ultraviolet lithography (EUVL) technology for late cycle insertion at 32 nm half-pitch (hp) and full introduction for 22 nm hp high volume production, the mask development infrastructure must be in place by 2010. The central element of the mask infrastructure is contamination-free reticle handling and protection. Today, the industry has already developed and balloted an EUV pod standard for shipping, transporting, transferring, and storing EUV masks. We have previously demonstrated that the EUV pod reticle handling method represents the best approach in meeting EUVL high volume production requirements, based on then state-of-the-art inspection capability at ~53nm polystyrene latex (PSL) equivalent sensitivity. In this paper, we will present our latest data to show defect-free reticle handling is achievable down to 40 nm particle sizes, using the same EUV pod carriers as in the previous study and the recently established world's most advanced defect inspection capability of ~40 nm SiO2 equivalent sensitivity. The EUV pod is a worthy solution to meet EUVL pilot line and pre-production exposure tool development requirements. We will also discuss the technical challenges facing the industry in refining the EUV pod solution to meet 22 nm hp EUVL production requirements and beyond.

A study of phase defect measurement on EUV mask by multiple detectors CD-SEM

NASA Astrophysics Data System (ADS)

Yonekura, Isao; Hakii, Hidemitsu; Morisaki, Shinya; Murakawa, Tsutomu; Shida, Soichi; Kuribara, Masayuki; Iwai, Toshimichi; Matsumoto, Jun; Nakamura, Takayuki

2013-06-01

We have studied MVM (Multi Vision Metrology) -SEM® E3630 to measure 3D shape of defects. The four detectors (Detector A, B, C and D) are independently set up in symmetry for the primary electron beam axis. Signal processing of four direction images enables not only 2D (width) measurement but also 3D (height) measurement. At last PMJ, we have investigated the relation between the E3630's signal of programmed defect on MoSi-HT and defect height measured by AFM (Atomic Force Microscope). It was confirmed that height of integral profile by this tool is correlated with AFM. It was tested that E3630 has capability of observing multilayer defect on EUV. We have investigated correlation with AFM of width and depth or height of multilayer defect. As the result of observing programmed defects, it was confirmed that measurement result by E3630 is well correlated with AFM. And the function of 3D view image enables to show nm order defect.

Pattern centric design based sensitive patterns and process monitor in manufacturing

NASA Astrophysics Data System (ADS)

Hsiang, Chingyun; Cheng, Guojie; Wu, Kechih

2017-03-01

When design rule is mitigating to smaller dimension, process variation requirement is tighter than ever and challenges the limits of device yield. Masks, lithography, etching and other processes have to meet very tight specifications in order to keep defect and CD within the margins of the process window. Conventionally, Inspection and metrology equipments are utilized to monitor and control wafer quality in-line. In high throughput optical inspection, nuisance and review-classification become a tedious labor intensive job in manufacturing. Certain high-resolution SEM images are taken to validate defects after optical inspection. These high resolution SEM images catch not only optical inspection highlighted point, also its surrounding patterns. However, this pattern information is not well utilized in conventional quality control method. Using this complementary design based pattern monitor not only monitors and analyzes the variation of patterns sensitivity but also reduce nuisance and highlight defective patterns or killer defects. After grouping in either single or multiple layers, systematic defects can be identified quickly in this flow. In this paper, we applied design based pattern monitor in different layers to monitor process variation impacts on all kinds of patterns. First, the contour of high resolutions SEM image is extracted and aligned to design with offset adjustment and fine alignment [1]. Second, specified pattern rules can be applied on design clip area, the same size as SEM image, and form POI (pattern of interest) areas. Third, the discrepancy of contour and design measurement at different pattern types in measurement blocks. Fourth, defective patterns are reported by discrepancy detection criteria and pattern grouping [4]. Meanwhile, reported pattern defects are ranked by number and severity by discrepancy. In this step, process sensitive high repeatable systematic defects can be identified quickly Through this design based process pattern monitor method, most of optical inspection nuisances can be filtered out at contour to design discrepancy measurement. Daily analysis results are stored at database as reference to compare with incoming data. Defective pattern library contains existing and known systematic defect patterns which help to catch and identify new pattern defects or process impacts. On the other hand, this defect pattern library provides extra valuable information for mask, pattern and defects verification, inspection care area generation, further OPC fix and process enhancement and investigation.

Photomask etch system and process for 10nm technology node and beyond

NASA Astrophysics Data System (ADS)

Chandrachood, Madhavi; Grimbergen, Michael; Yu, Keven; Leung, Toi; Tran, Jeffrey; Chen, Jeff; Bivens, Darin; Yalamanchili, Rao; Wistrom, Richard; Faure, Tom; Bartlau, Peter; Crawford, Shaun; Sakamoto, Yoshifumi

2015-10-01

While the industry is making progress to offer EUV lithography schemes to attain ultimate critical dimensions down to 20 nm half pitch, an interim optical lithography solution to address an immediate need for resolution is offered by various integration schemes using advanced PSM (Phase Shift Mask) materials including thin e-beam resist and hard mask. Using the 193nm wavelength to produce 10nm or 7nm patterns requires a range of optimization techniques, including immersion and multiple patterning, which place a heavy demand on photomask technologies. Mask schemes with hard mask certainly help attain better selectivity and hence better resolution but pose integration challenges and defectivity issues. This paper presents a new photomask etch solution for attenuated phase shift masks that offers high selectivity (Cr:Resist > 1.5:1), tighter control on the CD uniformity with a 3sigma value approaching 1 nm and controllable CD bias (5-20 nm) with excellent CD linearity performance (<5 nm) down to the finer resolution. The new system has successfully demonstrated capability to meet the 10 nm node photomask CD requirements without the use of more complicated hard mask phase shift blanks. Significant improvement in post wet clean recovery performance was demonstrated by the use of advanced chamber materials. Examples of CD uniformity, linearity, and minimum feature size, and etch bias performance on 10 nm test site and production mask designs will be shown.

Software for roof defects recognition on aerial photographs

NASA Astrophysics Data System (ADS)

Yudin, D.; Naumov, A.; Dolzhenko, A.; Patrakova, E.

2018-05-01

The article presents information on software for roof defects recognition on aerial photographs, made with air drones. An areal image segmentation mechanism is described. It allows detecting roof defects – unsmoothness that causes water stagnation after rain. It is shown that HSV-transformation approach allows quick detection of stagnation areas, their size and perimeters, but is sensitive to shadows and changes of the roofing-types. Deep Fully Convolutional Network software solution eliminates this drawback. The tested data set consists of the roofing photos with defects and binary masks for them. FCN approach gave acceptable results of image segmentation in Dice metric average value. This software can be used in inspection automation of roof conditions in the production sector and housing and utilities infrastructure.

Improved line-end foreshortening and corner-rounding control in optical proximity correction using radius of curvature method

NASA Astrophysics Data System (ADS)

Mukherjee, Maharaj; Phan, Vinhthuy

2002-07-01

We describe how to generate better Optical Proximity Corrections (OPC) for line-ends and corners by using rounded anchors and serifs. These rounded serifs and anchors can be made smaller in size and shape than the traditional rectilinear anchors and serifs. The smaller size of the serifs tend to have less problems in satisfying mask-rule constraints. They also have less adverse effects on the printability of neighboring shapes. We refer to these rounded anchors and serifs as Mouse-Ears. The rounding is done by circles which are regular octagons with Ortho-45 straight lines. The main idea of this paper stems from the physical description of the lithographic process, which can be conceptualized as a low-pass filter. The low-pass filter eliminates the sharp corners of the feature which are made of high spatial-frequency components and retains the low spatial-frequency components. Since the rounded anchors and serifs have fewer high-frequency components than their rectilinear counterparts they get less deformed in the lithographic process.

OPC model generation procedure for different reticle vendors

NASA Astrophysics Data System (ADS)

Jost, Andrew M.; Belova, Nadya; Callan, Neal P.

2003-12-01

The challenge of delivering acceptable semiconductor products to customers in timely fashion becomes more difficult as design complexity increases. The requirements of current generation designs tax OPC engineers greater than ever before since the readiness of high-quality OPC models can delay new process qualifications or lead to respins, which add to the upward-spiraling costs of new reticle sets, extend time-to-market, and disappoint customers. In their efforts to extend the printability of new designs, OPC engineers generally focus on the data-to-wafer path, ignoring data-to-mask effects almost entirely. However, it is unknown whether reticle makers' disparate processes truly yield comparable reticles, even with identical tools. This approach raises the question of whether a single OPC model is applicable to all reticle vendors. LSI Logic has developed a methodology for quantifying vendor-to-vendor reticle manufacturing differences and adapting OPC models for use at several reticle vendors. This approach allows LSI Logic to easily adapt existing OPC models for use with several reticle vendors and obviates the generation of unnecessary models, allowing OPC engineers to focus their efforts on the most critical layers.

CD control with defect inspection: you can teach an old dog a new trick

NASA Astrophysics Data System (ADS)

Utzny, Clemens; Ullrich, Albrecht; Heumann, Jan; Mohn, Elias; Meusemann, Stefan; Seltmann, Rolf

2012-11-01

Achieving the required critical dimensions (CD) with the best possible uniformity (CDU) on photo-masks has always played a pivotal role in enabling chip technology. Current control strategies are based on scanning electron microscopy (SEM) based measurements implying a sparse spatial resolution on the order of ~ 10-2 m to 10-1 m. A higher spatial resolution could be reached with an adequate measurement sampling, however the increase in the number of measurements makes this approach in the context of a productive environment unfeasible. With the advent of more powerful defect inspection tools a significantly higher spatial resolution of 10-4 m can be achieved by measuring also CD during the regular defect inspection. This method is not limited to the measurement of specific measurement features thus paving the way to a CD assessment of all electrically relevant mask patterns. Enabling such a CD measurement gives way to new realms of CD control. Deterministic short range CD effects which were previously interpreted as noise can be resolved and addressed by CD compensation methods. This in can lead to substantial improvements of the CD uniformity. Thus the defect inspection mediated CD control closes a substantial gap in the mask manufacturing process by allowing the control of short range CD effects which were up till now beyond the reach of regular CD SEM based control strategies. This increase in spatial resolution also counters the decrease in measurement precision due to the usage of an optical system. In this paper we present detailed results on a) the CD data generated during the inspection process, b) the analytical tools needed for relating this data to CD SEM measurement and c) how the CD inspection process enables new dimension of CD compensation within the mask manufacturing process. We find that the inspection based CD measurement generates typically around 500000 measurements with a homogeneous covering of the active mask area. In comparing the CD inspection results with CD SEM measurement on a single measurement point base we find that optical limitations of the inspection tool play a substantial role within the photon based inspection process. Once these shift are characterized and removed a correlation coefficient of 0.9 between these two CD measurement techniques is found. This finding agrees well with a signature based matching approach. Based on these findings we set up a dedicated pooling algorithm which performs on outlier removal for all CD inspections together with a data clustering according to feature specific tool induced shifts. This way tool induced shift effects can be removed and CD signature computation is enabled. A statistical model of the CD signatures which relates the mask design parameters on the relevant length scales to CD effects thus enabling the computation CD compensation maps. The compensation maps address the CD effects on various distinct length scales and we show that long and short range contributions to the CD variation are decreased. We find that the CD uniformity is improved by 25% using this novel CD compensation strategy.

High brightness electrodeless Z-Pinch EUV source for mask inspection tools

NASA Astrophysics Data System (ADS)

Horne, Stephen F.; Partlow, Matthew J.; Gustafson, Deborah S.; Besen, Matthew M.; Smith, Donald K.; Blackborow, Paul A.

2012-03-01

Energetiq Technology has been shipping the EQ-10 Electrodeless Z-pinchTM light source since 1995. The source is currently being used for metrology, mask inspection, and resist development. Energetiq's higher brightness source has been selected as the source for pre-production actinic mask inspection tools. This improved source enables the mask inspection tool suppliers to build prototype tools with capabilities of defect detection and review down to 16nm design rules. In this presentation we will present new source technology being developed at Energetiq to address the critical source brightness issue. The new technology will be shown to be capable of delivering brightness levels sufficient to meet the HVM requirements of AIMS and ABI and potentially API tools. The basis of the source technology is to use the stable pinch of the electrodeless light source and have a brightness of up to 100W/mm(carat)2-sr. We will explain the source design concepts, discuss the expected performance and present the modeling results for the new design.

ArF halftone PSM cleaning process optimization for next-generation lithography

NASA Astrophysics Data System (ADS)

Son, Yong-Seok; Jeong, Seong-Ho; Kim, Jeong-Bae; Kim, Hong-Seok

2000-07-01

ArF lithography which is expected for the next generation optical lithography is adapted for 0.13 micrometers design-rule and beyond. ArF half-tone phase shift mask (HT PSM) will be applied as 1st generation of ArF lithography. Also ArF PSM cleaning demands by means of tighter controls related to phase angle, transmittance and contamination on the masks. Phase angle on ArF HT PSM should be controlled within at least +/- 3 degree and transmittance controlled within at least +/- 3 percent after cleaning process and pelliclization. In the cleaning process of HT PSM, requires not only the remove the particle on mask, but also control to half-tone material for metamorphosis. Contamination defects on the Qz of half tone type PSM is not easy to remove on the photomask surface. New technology and methods of cleaning will be developed in near future, but we try to get out for limit contamination on the mask, without variation of phase angle and transmittance after cleaning process.

Metal oxide multilayer hard mask system for 3D nanofabrication

NASA Astrophysics Data System (ADS)

Han, Zhongmei; Salmi, Emma; Vehkamäki, Marko; Leskelä, Markku; Ritala, Mikko

2018-02-01

We demonstrate the preparation and exploitation of multilayer metal oxide hard masks for lithography and 3D nanofabrication. Atomic layer deposition (ALD) and focused ion beam (FIB) technologies are applied for mask deposition and mask patterning, respectively. A combination of ALD and FIB was used and a patterning procedure was developed to avoid the ion beam defects commonly met when using FIB alone for microfabrication. ALD grown Al2O3/Ta2O5/Al2O3 thin film stacks were FIB milled with 30 keV gallium ions and chemically etched in 5% tetramethylammonium hydroxide at 50 °C. With metal evaporation, multilayers consisting of amorphous oxides Al2O3 and Ta2O5 can be tailored for use in 2D lift-off processing, in preparation of embedded sub-100 nm metal lines and for multilevel electrical contacts. Good pattern transfer was achieved by lift-off process from the 2D hard mask for micro- and nano-scaled fabrication. As a demonstration of the applicability of this method to 3D structures, self-supporting 3D Ta2O5 masks were made from a film stack on gold particles. Finally, thin film resistors were fabricated by utilizing controlled stiction of suspended Ta2O5 structures.

Wafer plane inspection with soft resist thresholding

NASA Astrophysics Data System (ADS)

Hess, Carl; Shi, Rui-fang; Wihl, Mark; Xiong, Yalin; Pang, Song

2008-10-01

Wafer Plane Inspection (WPI) is an inspection mode on the KLA-Tencor TeraScaTM platform that uses the high signalto- noise ratio images from the high numerical aperture microscope, and then models the entire lithographic process to enable defect detection on the wafer plane[1]. This technology meets the needs of some advanced mask manufacturers to identify the lithographically-significant defects while ignoring the other non-lithographically-significant defects. WPI accomplishes this goal by performing defect detection based on a modeled image of how the mask features would actually print in the photoresist. There are several advantages to this approach: (1) the high fidelity of the images provide a sensitivity advantage over competing approaches; (2) the ability to perform defect detection on the wafer plane allows one to only see those defects that have a printing impact on the wafer; (3) the use of modeling on the lithographic portion of the flow enables unprecedented flexibility to support arbitrary illumination profiles, process-window inspection in unit time, and combination modes to find both printing and non-printing defects. WPI is proving to be a valuable addition to the KLA-Tencor detection algorithm suite. The modeling portion of WPI uses a single resist threshold as the final step in the processing. This has been shown to be adequate on several advanced customer layers, but is not ideal for all layers. Actual resist chemistry has complicated processes including acid and base-diffusion and quench that are not consistently well-modeled with a single resist threshold. We have considered the use of an advanced resist model for WPI, but rejected it because the burdensome requirements for the calibration of the model were not practical for reticle inspection. This paper describes an alternative approach that allows for a "soft" resist threshold to be applied that provides a more robust solution for the most challenging processes. This approach is just finishing beta testing with a customer developing advanced node designs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

3D printable highly conductive and mechanically strong thermoplastic-based nanocomposites

NASA Astrophysics Data System (ADS)

Tabiai, Ilyass; Therriault, Daniel

Highly conductive 3D printable inks can be used to design electrical devices with various functionalities and geometries. We use the solvent evaporation assisted 3D-printing method to create high resolution structures made of poly(lactid) acid (PLA) reinforced with multi-walled carbon nanotube (MWCNTs). We characterize fibers with diameters ranging between 100 μm to 330 μm and reinforced with MWCNTs from 0.5 up to 40wt% here. Tensile test, shrinkage ratio, density and electrical conductivity measurements of the printed nanocomposite are presented. The material's electrical conductivity is strongly improved by adding MWCNTs (up to 3000S/m), this value was found to be higher than any 3D-printable carbon based material available in the literature. It is observed that MWCNTs significantly increase the material's strength and stiffness while reducing its ductility. The ink's density was also higher while still being in the range of polymers' densities. The presented nanocomposite is light weight, highly conductive, has good mechanical properties and can be printed in a freeform fashion at the micro scale. A myriad of low power consumption with less resistive heating sensors and devices can potentially be designed using it and integrated into other 3D printable products.

Defect inspection of periodic patterns with low-order distortions

NASA Astrophysics Data System (ADS)

Khalaj, Babak H.; Aghajan, Hamid K.; Paulraj, Arogyaswami; Kailath, Thomas

1994-03-01

A self-reliance technique is developed for detecting defects in repeated pattern wafers and masks with low-order distortions. If the patterns are located on a perfect rectangular grid, it is possible to estimate the period of repeated patterns in both directions, and then produce a defect-free reference image for making comparison with the actual image. But in some applications, the repeated patterns are somehow shifted from their desired position on a rectangular grid, and the aforementioned algorithm cannot be directly applied. In these situations, to produce a defect-free reference image and locate the defected cells, it is necessary to estimate the amount of misalignment of each cell beforehand. The proposed technique first estimates the misalignment of repeated patterns in each row and column. After estimating the location of all cells in the image, a defect-free reference image is generated by averaging over all the cells and is compared with the input image to localize the possible defects.

Evaluation of anti-sticking layers performances for 200mm wafer scale Smart NILTM process through surface and defectivity characterizations

NASA Astrophysics Data System (ADS)

Delachat, F.; Phillipe, J.-C.; Larrey, V.; Fournel, F.; Bos, S.; Teyssèdre, H.; Chevalier, Xavier; Nicolet, Célia; Navarro, Christophe; Cayrefourcq, Ian

2018-03-01

In this work, an evaluation of various ASL processes for 200 mm wafer scale in the HERCULES® NIL equipment platform available at the CEA-Leti through the INSPIRE program is reported. The surface and adherence energies were correlated to the AFM and defectivity results in order to select the most promising ASL process for high resolution etch mask applications. The ASL performances of the selected process were evaluated by multiple working stamp fabrication using unpatterned and patterned masters though defectivity monitoring on optical based-inspection tools. Optical and SEM defect reviews were systematically performed. Multiple working stamps fabrication without degradation of the master defectivity was witnessed. This evaluation enabled to benchmark several ASL solutions based on the grafted technology develop by ARKEMA in order to reduce and optimize the soft stamp defectivity prior to its replication and therefore considerably reduce the final imprint defectivity for the Smart NIL process.

A highly printable and biocompatible hydrogel composite for direct printing of soft and perfusable vasculature-like structures.

PubMed

Suntornnond, Ratima; Tan, Edgar Yong Sheng; An, Jia; Chua, Chee Kai

2017-12-04

Vascularization is one major obstacle in bioprinting and tissue engineering. In order to create thick tissues or organs that can function like original body parts, the presence of a perfusable vascular system is essential. However, it is challenging to bioprint a hydrogel-based three-dimensional vasculature-like structure in a single step. In this paper, we report a new hydrogel-based composite that offers impressive printability, shape integrity, and biocompatibility for 3D bioprinting of a perfusable complex vasculature-like structure. The hydrogel composite can be used on a non-liquid platform and is printable at human body temperature. Moreover, the hydrogel composite supports both cell proliferation and cell differentiation. Our results represent a potentially new vascularization strategy for 3D bioprinting and tissue engineering.

Shuttle Wing Leading Edge Root Cause NDE Team Findings and Implementation of Quantitative Flash Infrared Thermography

NASA Technical Reports Server (NTRS)

Burke, Eric R.

2009-01-01

Comparison metrics can be established to reliably and repeatedly establish the health of the joggle region of the Orbiter Wing Leading Edge reinforced carbon carbon (RCC) panels. Using these metrics can greatly reduced the man hours needed to perform, wing leading edge scanning for service induced damage. These time savings have allowed for more thorough inspections to be preformed in the necessary areas with out affecting orbiter flow schedule. Using specialized local inspections allows for a larger margin of safety by allowing for more complete characterizations of panel defects. The presence of the t-seal during thermographic inspection can have adverse masking affects on ability properly characterize defects that exist in the joggle region of the RCC panels. This masking affect dictates the final specialized inspection should be preformed with the t-seal removed. Removal of the t-seal and use of the higher magnification optics has lead to the most effective and repeatable inspection method for characterizing and tracking defects in the wing leading edge. Through this study some inadequacies in the main health monitoring system for the orbiter wing leading edge have been identified and corrected. The use of metrics and local specialized inspection have lead to a greatly increased reliability and repeatable inspection of the shuttle wing leading edge.

Fabrication of rectangular cross-sectional microchannels on PMMA with a CO2 laser and underwater fabricated copper mask

NASA Astrophysics Data System (ADS)

Prakash, Shashi; Kumar, Subrata

2017-09-01

CO2 lasers are commonly used for fabricating polymer based microfluidic devices. Despite several key advantages like low cost, time effectiveness, easy to operate and no requirement of clean room facility, CO2 lasers suffer from few disadvantages like thermal bulging, improper dimensional control, difficulty to produce microchannels of other than Gaussian cross sectional shapes and inclined surface walls. Many microfluidic devices require square or rectangular cross-sections which are difficult to produce using normal CO2 laser procedures. In this work, a thin copper sheet of 40 μm was used as a mask above the PMMA (Polymethyl-methacrylate) substrate while fabricating the microchannels utilizing the raster scanning feature of the CO2 lasers. Microchannels with different width dimensions were fabricated utilizing a CO2 laser in with mask and without-mask conditions. A comparison of both the fabricating process has been made. It was found that microchannels with U shape cross section and rectangular cross-section can efficiently be produced using the with mask technique. In addition to this, this technique can provide perfect dimensional control and better surface quality of the microchannel walls. Such a microchannel fabrication process do not require any post-processing. The fabrication of mask using a nanosecond fiber laser has been discussed in details. An underwater laser fabrication method was adopted to overcome heat related defects in mask preparation. Overall, the technique was found to be easy to adopt and significant improvements were observed in microchannel fabrication.

Thermal image analysis for detecting facemask leakage

NASA Astrophysics Data System (ADS)

Dowdall, Jonathan B.; Pavlidis, Ioannis T.; Levine, James

2005-03-01

Due to the modern advent of near ubiquitous accessibility to rapid international transportation the epidemiologic trends of highly communicable diseases can be devastating. With the recent emergence of diseases matching this pattern, such as Severe Acute Respiratory Syndrome (SARS), an area of overt concern has been the transmission of infection through respiratory droplets. Approved facemasks are typically effective physical barriers for preventing the spread of viruses through droplets, but breaches in a mask"s integrity can lead to an elevated risk of exposure and subsequent infection. Quality control mechanisms in place during the manufacturing process insure that masks are defect free when leaving the factory, but there remains little to detect damage caused by transportation or during usage. A system that could monitor masks in real-time while they were in use would facilitate a more secure environment for treatment and screening. To fulfill this necessity, we have devised a touchless method to detect mask breaches in real-time by utilizing the emissive properties of the mask in the thermal infrared spectrum. Specifically, we use a specialized thermal imaging system to detect minute air leakage in masks based on the principles of heat transfer and thermodynamics. The advantage of this passive modality is that thermal imaging does not require contact with the subject and can provide instant visualization and analysis. These capabilities can prove invaluable for protecting personnel in scenarios with elevated levels of transmission risk such as hospital clinics, border check points, and airports.

MEDEA+ project 2T302 MUSCLE: masks through user's supply chain: leadership by excellence

NASA Astrophysics Data System (ADS)

Torsy, Andreas

2008-04-01

The rapid evolution of our information society depends on the continuous developments and innovations of semiconductor products. The cost per chip functionality keeps reducing by a factor of 2 every 18 month. However, this performance and success of the semiconductor industry critically depends on the quality of the lithographic photomasks. The need for the high quality of photomask drives lithography costs sensitively, which is a key factor in the manufacture of microelectronics devices. Therefore, the aim is to reduce production costs while overcoming challenges in terms of feature sizes, complexity and cycle times. Consequently, lithography processes must provide highest possible quality at reasonable prices. This way, the leadership in the lithographic area can be maintained and European chipmakers can stay competitive with manufacturers in the Far East and the USA. Under the umbrella of MEDEA+, a project called MUSCLE (<< Masks through User's Supply Chain: Leadership by Excellence >>) has been started among leading semiconductor companies in Europe: ALTIS Semiconductor (Project Leader), ALCATEL Vacuum, ATMEL, CEA/LETI, Entegris, NXP Semiconductors, TOPPAN Photomasks, AMTC, Carl ZEISS SMS, DMS, Infineon Technologies, VISTEC Semiconductor, NIKON Precision, SCHOTT Lithotec, ASML, PHOTRONICS, IMEC, DCE, DNP Photomask, STMicroelectronics, XYALIS and iCADA. MUSCLE focuses particularly on mask data flow, photomask carrier, photomask defect characterization and photomask data handling. In this paper, we will discuss potential solutions like standardization and automation of the photomask data flow based on SEMI P10, the performance and the impact of the supply chain parameter within the photomask process, the standardization of photomask defect characterization and a discussion of the impact of new Reticle Enhancement Technologies (RET) such as mask process correction and finally a generic model to describe the photomasks key performance indicators for prototype photomasks.

Implant-retained skull prosthesis to cover a large defect of the hairy skull resulting from treatment of a basal cell carcinoma: A clinical report.

PubMed

Hoekstra, Jitske; Vissink, Arjan; Raghoebar, Gerry M; Visser, Anita

2017-05-01

Skin carcinoma, particularly basal cell carcinoma, and its treatment can result in large defects of the hairy skull. A 53-year-old man is described who was surgically treated for a large basal cell carcinoma invading the skin and underlying tissue at the top of the hairy skull. Treatment consisted of resecting the tumor and external part of the skull bone. To protect the brain and to cover the defect of the hairy skull, an acrylic resin skull prosthesis with hair was designed to mask the defect. The skull prosthesis was retained on 8 extraoral implants placed at the margins of the defect in the skull bone. The patient was satisfied with the treatment outcome. Copyright © 2016 Editorial Council for the Journal of Prosthetic Dentistry. Published by Elsevier Inc. All rights reserved.

Human vision-based algorithm to hide defective pixels in LCDs

NASA Astrophysics Data System (ADS)

Kimpe, Tom; Coulier, Stefaan; Van Hoey, Gert

2006-02-01

Producing displays without pixel defects or repairing defective pixels is technically not possible at this moment. This paper presents a new approach to solve this problem: defects are made invisible for the user by using image processing algorithms based on characteristics of the human eye. The performance of this new algorithm has been evaluated using two different methods. First of all the theoretical response of the human eye was analyzed on a series of images and this before and after applying the defective pixel compensation algorithm. These results show that indeed it is possible to mask a defective pixel. A second method was to perform a psycho-visual test where users were asked whether or not a defective pixel could be perceived. The results of these user tests also confirm the value of the new algorithm. Our "defective pixel correction" algorithm can be implemented very efficiently and cost-effectively as pixel-dataprocessing algorithms inside the display in for instance an FPGA, a DSP or a microprocessor. The described techniques are also valid for both monochrome and color displays ranging from high-quality medical displays to consumer LCDTV applications.

37 CFR 211.5 - Deposit of identifying material.

Code of Federal Regulations, 2014 CFR

2014-07-01

... work fixed in the form of the semiconductor chip product in which it was first commercially exploited. Defective chips may be deposited under this section provided that the mask work contribution would be revealed in reverse dissection of the chips. The four reproductions shall be accompanied by a visually...

37 CFR 211.5 - Deposit of identifying material.

Code of Federal Regulations, 2012 CFR

2012-07-01

... fixed in the form of the semiconductor chip product in which it was first commercially exploited. Defective chips may be deposited under this section provided that the mask work contribution would be revealed in reverse dissection of the chips. The four reproductions shall be accompanied by a visually...

37 CFR 211.5 - Deposit of identifying material.

Code of Federal Regulations, 2013 CFR

2013-07-01

... fixed in the form of the semiconductor chip product in which it was first commercially exploited. Defective chips may be deposited under this section provided that the mask work contribution would be revealed in reverse dissection of the chips. The four reproductions shall be accompanied by a visually...

A mesoporous nickel counter electrode for printable and reusable perovskite solar cells.

PubMed

Ku, Zhiliang; Xia, Xinhui; Shen, He; Tiep, Nguyen Huy; Fan, Hong Jin

2015-08-28

A mesoporous nickel layer is used as the counter electrode in printable perovskite solar cells. A unique reuse process is realized in such perovskite solar cell devices by repeated loading of the perovskite material. Under standard AM1.5 illumination, the fresh device shows a promising power conversion efficiency of 13.6%, and an efficiency of 12.1% is obtained in the reused devices.

Mechanically Milled Irregular Zinc Nanoparticles for Printable Bioresorbable Electronics.

PubMed

Mahajan, Bikram K; Yu, Xiaowei; Shou, Wan; Pan, Heng; Huang, Xian

2017-05-01

Bioresorbable electronics is predominantly realized by complex and time-consuming anhydrous fabrication processes. New technology explores printable methods using inks containing micro- or nano-bioresorbable particles (e.g., Zn and Mg). However, these particles have seldom been obtained in the context of bioresorbable electronics using cheap, reliable, and effective approaches with limited study on properties essential to printable electronics. Here, irregular nanocrystalline Zn with controllable sizes and optimized electrical performance is obtained through ball milling approach using polyvinylpyrrolidone (PVP) as a process control agent to stabilize Zn particles and prevent cold welding. Time and PVP dependence of the ball milled particles are studied with systematic characterizations of morphology and composition of the nanoparticles. The results reveal crystallized Zn nanoparticles with a size of ≈34.834 ± 1.76 nm and low surface oxidation. The resulting Zn nanoparticles can be readily printed onto bioresorbable substrates and sintered at room temperature using a photonic sintering approach, leading to a high conductivity of 44 643 S m -1 for printable zinc nanoparticles. The techniques to obtain Zn nanoparticles through ball milling and processing them through photonic sintering may potentially lead to a mass fabrication method for bioresorbable electronics and promote its applications in healthcare, environmental protection, and consumer electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Femtopulse laser-based mask repair in the DUV wavelength regime

NASA Astrophysics Data System (ADS)

Ghadiali, Firoz; Tolani, Vikram; Nagpal, Rajesh; Robinson, Tod; LeClaire, Jeff; Bozak, Ron; Lee, David A.; White, Roy

2006-05-01

Deep ultraviolet (DUV) femtosecond-pulsed laser ablation has numerous highly desirable properties for subtractive photomask defect repair. These qualities include high removal rates, resolution better than the focused spot size, minimized redeposition of the ablated material (rollup and splatter), and a negligible heat affected zone. The optical properties of the photomask result in a broad repair process window because the absorber film (whether Cr or MoSi) and the transmissive substrate allow for a high degree of material removal selectivity. Repair results and process parameters from such a system are examined in light of theoretical considerations. In addition, the practical aspects of the operation of this system in a production mask house environment are reviewed from the standpoint of repair quality, capability, availability, and throughput. Focus is given to the benefit received by the mask shop, and to the technical performance of the system.

A hole-conductor-free, fully printable mesoscopic perovskite solar cell with high stability.

PubMed

Mei, Anyi; Li, Xiong; Liu, Linfeng; Ku, Zhiliang; Liu, Tongfa; Rong, Yaoguang; Xu, Mi; Hu, Min; Chen, Jiangzhao; Yang, Ying; Grätzel, Michael; Han, Hongwei

2014-07-18

We fabricated a perovskite solar cell that uses a double layer of mesoporous TiO2 and ZrO2 as a scaffold infiltrated with perovskite and does not require a hole-conducting layer. The perovskite was produced by drop-casting a solution of PbI2, methylammonium (MA) iodide, and 5-ammoniumvaleric acid (5-AVA) iodide through a porous carbon film. The 5-AVA templating created mixed-cation perovskite (5-AVA)x(MA)1- xPbI3 crystals with lower defect concentration and better pore filling as well as more complete contact with the TiO2 scaffold, resulting in a longer exciton lifetime and a higher quantum yield for photoinduced charge separation as compared to MAPbI3. The cell achieved a certified power conversion efficiency of 12.8% and was stable for >1000 hours in ambient air under full sunlight. Copyright © 2014, American Association for the Advancement of Science.

Three-Dimensional Printing of Tissue/Organ Analogues Containing Living Cells.

PubMed

Park, Jeong Hun; Jang, Jinah; Lee, Jung-Seob; Cho, Dong-Woo

2017-01-01

The technical advances of three-dimensional (3D) printing in the field of tissue engineering have enabled the creation of 3D living tissue/organ analogues. Diverse 3D tissue/organ printing techniques with computer-aided systems have been developed and used to dispose living cells together with biomaterials and supporting biochemicals as pre-designed 3D tissue/organ models. Furthermore, recent advances in bio-inks, which are printable hydrogels with living cell encapsulation, have greatly enhanced the versatility of 3D tissue/organ printing. Here, we introduce 3D tissue/organ printing techniques and biomaterials that have been developed and widely used thus far. We also review a variety of applications in an attempt to repair or replace the damaged or defective tissue/organ, and develop the in vitro tissue/organ models. The potential challenges are finally discussed from the technical perspective of 3D tissue/organ printing.

Fully Printable Organic and Perovskite Solar Cells with Transfer-Printed Flexible Electrodes.

PubMed

Li, Xianqiang; Tang, Xiaohong; Ye, Tao; Wu, Dan; Wang, Hong; Wang, Xizu

2017-06-07

The perovskite solar cells (PSCs) and organic solar cells (OSCs) with high performance were fabricated with transfer-printed top metal electrodes. We have demonstrated that PSCs and OSCs with the top Au electrodes fabricated by using the transfer printing method have comparable or better performance than the devices with the top Au electrodes fabricated by using the conventional thermal evaporation method. The highest PCE of the PSCs and OSCs with the top electrodes fabricated using the transfer printing method achieved 13.72% and 2.35%, respectively. It has been investigated that fewer defects between the organic thin films and Au electrodes exist by using the transfer printing method which improved the device stability. After storing the PSCs and OSCs with the transfer-printed electrodes in a nitrogen environment for 97 and 103 days without encapsulation, the PSCs and OSCs still retained 71% and 91% of their original PCEs, respectively.

Study of shape evaluation for mask and silicon using large field of view

NASA Astrophysics Data System (ADS)

Matsuoka, Ryoichi; Mito, Hiroaki; Shinoda, Shinichi; Toyoda, Yasutaka

2010-09-01

We have developed a highly integrated method of mask and silicon metrology. The aim of this integration is evaluating the performance of the silicon corresponding to Hotspot on a mask. It can use the mask shape of a large field, besides. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used in mask CD-SEM and silicon CD-SEM. Currently, as semiconductor manufacture moves towards even smaller feature size, this necessitates more aggressive optical proximity correction (OPC) to drive the super-resolution technology (RET). In other words, there is a trade-off between highly precise RET and mask manufacture, and this has a big impact on the semiconductor market that centers on the mask business. As an optimal solution to these issues, we provide a DFM solution that extracts 2-dimensional data for a more realistic and error-free simulation by reproducing accurately the contour of the actual mask, in addition to the simulation results from the mask data. On the other hand, there is roughness in the silicon form made from a mass-production line. Moreover, there is variation in the silicon form. For this reason, quantification of silicon form is important, in order to estimate the performance of a pattern. In order to quantify, the same form is equalized in two dimensions. And the method of evaluating based on the form is popular. In this study, we conducted experiments for averaging method of the pattern (Measurement Based Contouring) as two-dimensional mask and silicon evaluation technique. That is, observation of the identical position of a mask and a silicon was considered. The result proved its detection accuracy and reliability of variability on two-dimensional pattern (mask and silicon) and is adaptable to following fields of mask quality management. •Discrimination of nuisance defects for fine pattern. •Determination of two-dimensional variability of pattern. •Verification of the performance of the pattern of various kinds of Hotspots. In this report, we introduce the experimental results and the application. We expect that the mask measurement and the shape control on mask production will make a huge contribution to mask yield-enhancement and that the DFM solution for mask quality control process will become much more important technology than ever. It is very important to observe the form of the same location of Design, Mask, and Silicon in such a viewpoint. And we report it about algorithm of the image composition in Large Field.

Imaging performance improvement of coherent extreme-ultraviolet scatterometry microscope with high-harmonic-generation extreme-ultraviolet source

NASA Astrophysics Data System (ADS)

Mamezaki, Daiki; Harada, Tetsuo; Nagata, Yutaka; Watanabe, Takeo

2017-06-01

In extreme-ultraviolet (EUV) lithography, the development of a review apparatus for the EUV mask pattern at an exposure wavelength of 13.5 nm is required. The EUV mask is composed of an absorber pattern and a Mo/Si multilayer on a glass substrate. This mask pattern has a three-dimensional (3D) structure. The 3D structure would modulate the EUV reflection phase, which would cause focus and pattern shifts. Thus, the review of the EUV phase image is also important. We have developed a coherent EUV scatterometry microscope (CSM), which is a simple microscope without objective optics. The EUV phase and intensity images were reconstructed with diffraction images by ptychography. For a standalone mask review, the high-harmonic-generation (HHG) EUV source was employed. In this study, we updated the sample stage, pump-laser reduction system, and gas-pressure control system to reconstruct the image. As a result, an 88 nm line-and-space pattern and a cross-line pattern were reconstructed. In addition, a particle defect of 2 µm diameter was well reconstructed. This demonstrated the high capability of the standalone CSM, which can hence be used in factories, such as mask shops and semiconductor fabrication plants.

Clean induced feature CD shift of EUV mask

NASA Astrophysics Data System (ADS)

Nesládek, Pavel; Schedel, Thorsten; Bender, Markus

2016-05-01

EUV developed in the last decade to the most promising <7nm technology candidate. Defects are considered to be one of the most critical issues of the EUV mask. There are several contributors which make the EUV mask so different from the optical one. First one is the significantly more complicated mask stack consisting currently of 40 Mo/Si double layers, covered by Ru capping layer and TaN/TaO absorber/anti-reflective coating on top of the front face of the mask. Backside is in contrary to optical mask covered as well by conductive layer consisting of Cr or CrN. Second contributor is the fact that EUV mask is currently in contrary to optical mask not yet equipped with sealed pellicle, leading to much higher risk of mask contamination. Third reason is use of EUV mask in vacuum, possibly leading to deposition of vacuum contaminants on the EUV mask surface. Latter reason in combination with tight requirements on backside cleanliness lead to the request of frequent recleaning of the EUV mask, in order to sustain mask lifetime similar to that of optical mask. Mask cleaning process alters slightly the surface of any mask - binary COG mask, as well as phase shift mask of any type and naturally also of the EUV mask as well. In case of optical masks the changes are almost negligible, as the mask is exposed to max. 10-20 re-cleans within its life time. These modifications can be expressed in terms of different specified parameters, e.g. CD shift, phase/trans shift, change of the surface roughness etc. The CD shift, expressed as thinning (or exceptionally thickening) of the dark features on the mask is typically in order of magnitude 0.1nm per process run, which is completely acceptable for optical mask. Projected on the lifetime of EUV mask, assuming 100 clean process cycles, this will lead to CD change of about 10nm. For this reason the requirements for EUV mask cleaning are significantly tighter, << 0.1 nm per process run. This task will look even more challenging, when considering, that the tools for CD measurement at the EUV mask are identical as for optical mask. There is one aspect influencing the CD shift, which demands attention. The mask composition of the EUV mask is significantly different from the optical mask. More precisely there are 2 materials influencing the estimated CD in case of EUV mask, whereas there is one material only in case of optical masks, in first approximation. For optical masks, the CD changes can be attributed to modification of the absorber/ARC layer, as the quartz substrate can be hardly modified by the wet process. For EUV Masks chemical modification of the Ru capping layer - thinning, oxidization etc. are rather more probable and we need to take into account, how this effects can influence the CD measurement process. CD changes measured can be interpreted as either change in the feature size, or modification of the chemical nature of both absorber/ARC layer stack and the Ru capping layer. In our work we try to separate the effect of absorber and Ru/capping layer on the CD shift observed and propose independent way of estimation both parameters.

An Alternative Anionic Polyelectrolyte for Aqueous PEDOT Dispersions: Toward Printable Transparent Electrodes.

PubMed

Hofmann, Anna I; Smaal, Wiljan T T; Mumtaz, Muhammad; Katsigiannopoulos, Dimitrios; Brochon, Cyril; Schütze, Falk; Hild, Olaf R; Cloutet, Eric; Hadziioannou, Georges

2015-07-13

Organic conducting polymers are promising electrode materials for printable organic electronics. One of the most studied conducting polymers is PSS, which is sufficiently conductive and transparent, but which shows some drawbacks, such as hygroscopicity and acidity. A new approach to stabilize PEDOT in aqueous dispersions involves the replacement of PSS with a basic polyanion based on a polystyrene backbone with (trifluoromethylsulfonyl)imide (TSFI) side groups. The PSTFSIK dispersions were obtained by oxidative polymerization of EDOT in an aqueous PSTFSIK solution and were characterized with regard to their composition, morphology, doping, rheological behavior, and optoelectronic performance. The PSTFSIK dispersions showed excellent printability and good optoelectronic performance (238 Ohm sq(-1) at 91% transmittance, σ>260 S cm(-1)) and were successfully integrated as flexible electrodes in OLED and OPV devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fully printable transparent monolithic solid-state dye-sensitized solar cell with mesoscopic indium tin oxide counter electrode.

PubMed

Yang, Ying; Ri, Kwangho; Rong, Yaoguang; Liu, Linfeng; Liu, Tongfa; Hu, Min; Li, Xiong; Han, Hongwei

2014-09-07

We present a new transparent monolithic mesoscopic solid-state dye-sensitized solar cell based on trilamellar films of mesoscopic TiO2 nanocrystalline photoanode, a ZrO2 insulating layer and an indium tin oxide counter electrode (ITO-CE), which were screen-printed layer by layer on a single substrate. When the thickness of the ITO-CE was optimized to 2.1 μm, this very simple and fully printable solid-state DSSC with D102 dye and spiro-OMeTAD hole transport materials presents efficiencies of 1.73% when irradiated from the front side and 1.06% when irradiated from the rear side under a standard simulated sunlight condition (AM 1.5 Global, 100 mW cm(-2)). Higher parameters could be expected with a better transparent mesoscopic counter electrode and hole conductor for the printable monolithic mesoscopic solid-state DSSC.

Etch bias inversion during EUV mask ARC etch

NASA Astrophysics Data System (ADS)

Lajn, Alexander; Rolff, Haiko; Wistrom, Richard

2017-07-01

The introduction of EUV lithography to high volume manufacturing is now within reach for 7nm technology node and beyond (1), at least for some steps. The scheduling is in transition from long to mid-term. Thus, all contributors need to focus their efforts on the production requirements. For the photo mask industry, these requirements include the control of defectivity, CD performance and lifetime of their masks. The mask CD performance including CD uniformity, CD targeting, and CD linearity/ resolution, is predominantly determined by the photo resist performance and by the litho and etch processes. State-of-the-art chemically amplified resists exhibit an asymmetric resolution for directly and indirectly written features, which usually results in a similarly asymmetric resolution performance on the mask. This resolution gap may reach as high as multiple tens of nanometers on the mask level in dependence of the chosen processes. Depending on the printing requirements of the wafer process, a reduction or even an increase of this gap may be required. A potential way of tuning via the etch process, is to control the lateral CD contribution during etch. Aside from process tuning knobs like pressure, RF powers and gases, which usually also affect CD linearity and CD uniformity, the simplest knob is the etch time itself. An increased over etch time results in an increased CD contribution in the normal case. , We found that the etch CD contribution of ARC layer etch on EUV photo masks is reduced by longer over etch times. Moreover, this effect can be demonstrated to be present for different etch chambers and photo resists.

Detection algorithm for glass bottle mouth defect by continuous wavelet transform based on machine vision

NASA Astrophysics Data System (ADS)

Qian, Jinfang; Zhang, Changjiang

2014-11-01

An efficient algorithm based on continuous wavelet transform combining with pre-knowledge, which can be used to detect the defect of glass bottle mouth, is proposed. Firstly, under the condition of ball integral light source, a perfect glass bottle mouth image is obtained by Japanese Computar camera through the interface of IEEE-1394b. A single threshold method based on gray level histogram is used to obtain the binary image of the glass bottle mouth. In order to efficiently suppress noise, moving average filter is employed to smooth the histogram of original glass bottle mouth image. And then continuous wavelet transform is done to accurately determine the segmentation threshold. Mathematical morphology operations are used to get normal binary bottle mouth mask. A glass bottle to be detected is moving to the detection zone by conveyor belt. Both bottle mouth image and binary image are obtained by above method. The binary image is multiplied with normal bottle mask and a region of interest is got. Four parameters (number of connected regions, coordinate of centroid position, diameter of inner cycle, and area of annular region) can be computed based on the region of interest. Glass bottle mouth detection rules are designed by above four parameters so as to accurately detect and identify the defect conditions of glass bottle. Finally, the glass bottles of Coca-Cola Company are used to verify the proposed algorithm. The experimental results show that the proposed algorithm can accurately detect the defect conditions of the glass bottles and have 98% detecting accuracy.

Additive manufacturing of scaffolds with dexamethasone controlled release for enhanced bone regeneration.

PubMed

Costa, Pedro F; Puga, Ana M; Díaz-Gomez, Luis; Concheiro, Angel; Busch, Dirk H; Alvarez-Lorenzo, Carmen

2015-12-30

The adoption of additive manufacturing in tissue engineering and regenerative medicine (TERM) strategies greatly relies on the development of novel 3D printable materials with advanced properties. In this work we have developed a material for bone TERM applications with tunable bioerosion rate and dexamethasone release profile which can be further employed in fused deposition modelling (the most common and accessible 3D printing technology in the market). The developed material consisted of a blend of poly-ϵ-caprolactone (PCL) and poloxamine (Tetronic®) and was processed into a ready-to-use filament form by means of a simplified melt-based methodology, therefore eliminating the utilization of solvents. 3D scaffolds composed of various blend formulations were additively manufactured and analyzed revealing blend ratio-specific degradation rates and dexamethasone release profiles. Furthermore, in vitro culture studies revealed a similar blend ratio-specific trend concerning the osteoinductive activity of the fabricated scaffolds when these were seeded and cultured with human mesenchymal stem cells. The developed material enables to specifically address different regenerative requirements found in various tissue defects. The versatility of such strategy is further increased by the ability of additive manufacturing to accurately fabricate implants matching any given defect geometry. Copyright © 2015 Elsevier B.V. All rights reserved.

Sticker-type Alq(3)-based OLEDs based on printable ultrathin substrates in periodically anchored and suspended configurations.

PubMed

Yun, Su Ok; Hwang, Youngkyu; Park, Jeongpil; Jeong, Yunkyung; Kim, Suk Ho; Noh, Byeong Il; Jung, Hoon Sun; Jang, Hun Soo; Hyun, Yujun; Choa, Sung-Hoon; Ko, Heung Cho

2013-10-18

Introducing two-dimensional post arrays and a water-soluble sacrificial layer between an ultrathin substrate and a handling substrate provides controllability of the interfacial adhesion in a stable manner. The periodically anchored and suspended configuration after the chemical etching process facilitates the development of, for example, printable Alq3 -based OLEDs that can be attached to unconventional surfaces. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Monoallelic mutation analysis (MAMA) for identifying germline mutations.

PubMed

Papadopoulos, N; Leach, F S; Kinzler, K W; Vogelstein, B

1995-09-01

Dissection of germline mutations in a sensitive and specific manner presents a continuing challenge. In dominantly inherited diseases, mutations occur in only one allele and are often masked by the normal allele. Here we report the development of a sensitive and specific diagnostic strategy based on somatic cell hybridization termed MAMA (monoallelic mutation analysis). We have demonstrated the utility of this strategy in two different hereditary colorectal cancer syndromes, one caused by a defective tumour suppressor gene on chromosome 5 (familial adenomatous polyposis, FAP) and the other caused by a defective mismatch repair gene on chromosome 2 (hereditary non-polyposis colorectal cancer, HNPCC).

High-Performance Fully Printable Perovskite Solar Cells via Blade-Coating Technique under the Ambient Condition

DOE PAGES

Yang, Zhibin; Chueh, Chu-Chen; Zuo, Fan; ...

2015-04-30

A fully printable perovskite solar cell (PVSC) is demonstrated using a blade-coating technique under ambient conditions with controlled humidity. The influence of humidity on perovskite's crystallization is systematically investigated to realize the ambient processing condition. A high power conversion efficiency of 10.44% is achieved after optimizing the blade-coating process and, more importantly, a high-performance flexible PVSC is demonstrated for the first time. A high efficiency of 7.14% is achieved.

Advanced mask cleaning for 0.20-μm technology: an integrated user-supplier approach

NASA Astrophysics Data System (ADS)

Poschenrieder, Rudolf; Hay, Bernd; Beier, Matthias; Hourd, Andrew C.; Stuemer, Harald; Gairing, Thomas M.

1998-12-01

A newly developed photomask final cleaning system, STEAG HamaTech's Advanced Single Substrate Cleaner, ASC 500, was assessed and optimized at the Siemens mask shop in Munich, Germany, under production conditions within the Esprit European Semiconductor Equipment Assessment programme (SEA). The project was carried out together with the active participation of Compugraphics Intl. Ltd. (UK), DuPont Photomasks, Inc. (Germany; Photronics-MZD, Germany). The results of the assessment are presented, focusing on the cleaning performance at the 0.25 micrometer defect level on photomasks, equipment reliability and Cost of Ownership data. A reticle free of soft defects on glass and on chrome down to the 0.25 micrometer level requires an excellent cleaning process and the use of high-end inspection tools like the KLA STARlight. In order to get a full understanding of the nature of the detected features additional investigations on the blank quality have been carried out. These investigations include the questions whether a detection is a hard or a soft defect and whether small defects on chrome are able to move on the reticle surface. Final cleaning recipes have been optimized in respect to cleaning efficiency while maintaining high throughput and low Cost of Ownership. A benchmark comparison against other final cleaning tools at the partner's maskshops showed the leading data of the ASC 500. It was found that a cleaning program which includes several substrate flips and a combination of the available cleaning methods acid- dispense, water pressure jet clean, brush and megasonic clean was best suitable to achieve these goals. In particular the use of the brush unit was shown to improve the yield while not adding damage to the plate.

Inspection system qualification and integration into the mask manufacturing environment

NASA Astrophysics Data System (ADS)

LaVoy, Rosanne; Fujioka, Ron

1995-12-01

Integration of a mask inspection system into a manufacturing environment poses new challenges to both the inspection engineer and the equipment supplier. Traditional specifications (limited primarily to sensitivity and uptime) are no longer sufficient to successfully integrate a system into a 7 by 24 manufacturing area with multiple systems. Issues such as system sensitivity matching, sensitivity characterization by defect type, operator training and certification standards, and real-time SPC control of the systems must be addressed. This paper outlines some of the techniques Intel Mask Operation uses for integration of a new inspection system into the manufacturing line. Specifically moving a beta- site type tool out of the beta-site mode and into volume production. Examples are presented, including installation for manufacturing (including ergonomic modifications), techniques for system-to-system matching, use of SPC charts to monitor system performance, and operator training/certifications. Relationships between system PMs, or other environmental changes, and the system sensitivity SPC control charts also are discussed.

High permeable microporous structured carbon counter electrode assisted by polystyrene sphere for fully printable perovskite solar cells

NASA Astrophysics Data System (ADS)

Tao, Haijun; Li, Yongtao; Zhang, Chuanxiang; Wang, Kang; Wang, Jiayue; Tan, Bin; Han, Linxuan; Tao, Jie

2018-03-01

The permeability of the carbon counter electrode (CCE) is critical to the HTM-free fully printable perovskite solar cells. In this work, we report a CCE assisted by polystyrene spheres (PS-spheres) as pore-forming agent to gain microporous structure for a better permeability. Due to its decomposition temperature at 400 °C, the porous structure is obtained in the carbon layer easily. By optimization towards the contents of PS-spheres in CCE, the filling rate of perovskite solution and the photovoltaic performance of the device have been significantly improved. Using this method, an average efficiency enhancement of 22% has been obtained for HTM-free fully printable perovskite solar cells, resulting in a better fill rate of CH3NH3PbI3 and an efficiency of 4.49%. This kind of CCE with the advantages of simple, easy preparation process and well performance, show excellent potential application in perovskite solar cells.

3D Printability of Alginate-Carboxymethyl Cellulose Hydrogel

PubMed Central

Habib, Ahasan; Sathish, Venkatachalem; Mallik, Sanku; Khoda, Bashir

2018-01-01

Three-dimensional (3D) bio-printing is a revolutionary technology to reproduce a 3D functional living tissue scaffold in-vitro through controlled layer-by-layer deposition of biomaterials along with high precision positioning of cells. Due to its bio-compatibility, natural hydrogels are commonly considered as the scaffold material. However, the mechanical integrity of a hydrogel material, especially in 3D scaffold architecture, is an issue. In this research, a novel hybrid hydrogel, that is, sodium alginate with carboxymethyl cellulose (CMC) is developed and systematic quantitative characterization tests are conducted to validate its printability, shape fidelity and cell viability. The outcome of the rheological and mechanical test, filament collapse and fusion test demonstrate the favorable shape fidelity. Three-dimensional scaffold structures are fabricated with the pancreatic cancer cell, BxPC3 and the 86% cell viability is recorded after 23 days. This hybrid hydrogel can be a potential biomaterial in 3D bioprinting process and the outlined characterization techniques open an avenue directing reproducible printability and shape fidelity. PMID:29558424

Printed Electronics

NASA Astrophysics Data System (ADS)

Wade, Jessica; Hollis, Joseph Razzell; Wood, Sebastian

2018-04-01

The combination of printing technology with manufacturing electronic devices enables a new paradigm of printable electronics, where 'smart' functionality can be readily incorporated into almost any product at low cost. Over recent decades, rapid progress has been made in this field, which is now emerging into the industrial andcommercial realm. However, successful development and commercialisation on a large scale presents some significant technical challenges. For fully-printable electronic systems, all the component parts must be deposited from solutions (inks), requiring the development of new inorganic, organic and hybrid materials.A variety of traditional printing techniques are being explored and adapted forprinting these new materials in ways that result in the best performing electronicdevices. Whilst printed electronics research has initially focused on traditional typesof electronic device such as light-emitting diodes, transistors, and photovoltaics, it is increasingly apparent that a much wider range of applications can be realised. The soft and stretchable nature of printable materials makes them perfect candidates forbioelectronics, resulting in a wealth of research looking at biocompatible printable inks and biosensors. Regardless of application, the properties of printed electronicmaterials depend on the chemical structures, processing conditions, device architecture,and operational conditions, the complex inter-relationships of which aredriving ongoing research. We focus on three particular 'hot topics', where attention is currently focused: novel materials, characterisation techniques, and device stability. With progress advancing very rapidly, printed electronics is expected to grow over the next decade into a key technology with an enormous economic and social impact.

Fabrication of PLA Filaments and its Printable Performance

NASA Astrophysics Data System (ADS)

Liu, Wenjie; Zhou, Jianping; Ma, Yuming; Wang, Jie; Xu, Jie

2017-12-01

Fused deposition modeling (FDM) is a typical 3D printing technology and preparation of qualified filaments is the basis. In order to prepare polylactic acid (PLA) filaments suitable for personalized FDM 3D printing, this article investigated the effect of factors such as extrusion temperature and screw speed on the diameter, surface roughness and ultimate tensile stress of the obtained PLA filaments. The optimal process parameters for fabrication of qualified filaments were determined. Further, the printable performance of the obtained PLA filaments for 3D objects was preliminarily explored.

Simulation of pattern and defect detection in periodic amplitude and phase structures using photorefractive four-wave mixing

NASA Astrophysics Data System (ADS)

Nehmetallah, Georges; Banerjee, Partha; Khoury, Jed

2015-03-01

The nonlinearity inherent in four-wave mixing in photorefractive (PR) materials is used for adaptive filtering. Examples include script enhancement on a periodic pattern, scratch and defect cluster enhancement, periodic pattern dislocation enhancement, etc. through intensity filtering image manipulation. Organic PR materials have large space-bandwidth product, which makes them useful in adaptive filtering techniques in quality control systems. For instance, in the case of edge enhancement, phase conjugation via four-wave mixing suppresses the low spatial frequencies of the Fourier spectrum of an aperiodic image and consequently leads to image edge enhancement. In this work, we model, numerically verify, and simulate the performance of a four wave mixing setup used for edge, defect and pattern detection in periodic amplitude and phase structures. The results show that this technique successfully detects the slightest defects clearly even with no enhancement. This technique should facilitate improvements in applications such as image display sharpness utilizing edge enhancement, production line defect inspection of fabrics, textiles, e-beam lithography masks, surface inspection, and materials characterization.

Efficient creation of dipolar coupled nitrogen-vacancy spin qubits in diamond

NASA Astrophysics Data System (ADS)

Jakobi, I.; Momenzadeh, S. A.; Fávaro de Oliveira, F.; Michl, J.; Ziem, F.; Schreck, M.; Neumann, P.; Denisenko, A.; Wrachtrup, J.

2016-09-01

Coherently coupled pairs or multimers of nitrogen-vacancy defect electron spins in diamond have many promising applications especially in quantum information processing (QIP) but also in nanoscale sensing applications. Scalable registers of spin qubits are essential to the progress of QIP. Ion implantation is the only known technique able to produce defect pairs close enough to allow spin coupling via dipolar interaction. Although several competing methods have been proposed to increase the resulting resolution of ion implantation, the reliable creation of working registers is still to be demonstrated. The current limitation are residual radiation-induced defects, resulting in degraded qubit performance as trade-off for positioning accuracy. Here we present an optimized estimation of nanomask implantation parameters that are most likely to produce interacting qubits under standard conditions. We apply our findings to a well-established technique, namely masks written in electron-beam lithography, to create coupled defect pairs with a reasonable probability. Furthermore, we investigate the scaling behavior and necessary improvements to efficiently engineer interacting spin architectures.

An intelligent system for real time automatic defect inspection on specular coated surfaces

NASA Astrophysics Data System (ADS)

Li, Jinhua; Parker, Johné M.; Hou, Zhen

2005-07-01

Product visual inspection is still performed manually or semi automatically in most industries from simple ceramic tile grading to complex automotive body panel paint defect and surface quality inspection. Moreover, specular surfaces present additional challenge to conventional vision systems due to specular reflections, which may mask the true location of objects and lead to incorrect measurements. There are some sophisticated visual inspection methods developed in recent years. Unfortunately, most of them are highly computational. Systems built on those methods are either inapplicable or very costly to achieve real time inspection. In this paper, we describe an integrated low-cost intelligent system developed to automatically capture, extract, and segment defects on specular surfaces with uniform color coatings. The system inspects and locates regular surface defects with lateral dimensions as small as a millimeter. The proposed system is implemented on a group of smart cameras using its on-board processing ability to achieve real time inspection. The experimental results on real test panels demonstrate the effectiveness and robustness of proposed system.

Advanced optical imaging platform for CD metrology and defect review on 130-nm to 100-nm node reticles: an overview of preliminary results

NASA Astrophysics Data System (ADS)

Hourd, Andrew C.; Grimshaw, Anthony; Scheuring, Gerd; Gittinger, Christian; Brueck, Hans-Juergen; Chen, Shiuh-Bin; Chen, Parkson W.; Hartmann, Hans; Ordynskyy, Volodymyr; Jonckheere, Rik M.; Philipsen, Vicky; Schaetz, Thomas; Sommer, Karl

2002-08-01

Critical Dimension fidelity continues to be one of the key driving parameters defining photomask quality and printing performance. The present advanced optical CD metrology systems, operating at i-line, will very soon be challenged as viable tools owing to their restricted resolution and measurement linearity impact on the ability to produce repeatable measurements. Alternative measurement technologies such as CD-SEM and -AFM have started to appear, but are also not without tier concerns in the field of reticle CD metrology. This paper introduces a new optical metrology system (MueTec /) operating at DUV wavelength (248nm), which has been specifically designed to meet the resolution and measurement repeatability requirements of reticle manufacture at the 130nm and 100nm nodes. The system is based upon a specially designed mechanical-optical platform for maximum stability and very advanced optical, illumination, alignment and software systems. The at wavelength operation of this system also makes it an ideal platform for defect printability analysis and review. The system is currently part of a European Commission funded assessment project (IST-2000-28086: McD'OR) to develop a testing strategy to verify the system performance, agree on equipment specifications and demonstrate its capability on advanced production reticles - including long-term reliability. It is the preliminary results from this evaluation that are presented here.

Multi and mixed 3D-printing of graphene-hydroxyapatite hybrid materials for complex tissue engineering.

PubMed

Jakus, Adam E; Shah, Ramille N

2017-01-01

With the emergence of three-dimensional (3D)-printing (3DP) as a vital tool in tissue engineering and medicine, there is an ever growing need to develop new biomaterials that can be 3D-printed and also emulate the compositional, structural, and functional complexities of human tissues and organs. In this work, we probe the 3D-printable biomaterials spectrum by combining two recently established functional 3D-printable particle-laden biomaterial inks: one that contains hydroxyapatite microspheres (hyperelastic bone, HB) and another that contains graphene nanoflakes (3D-graphene, 3DG). We demonstrate that not only can these distinct, osteogenic, and neurogenic inks be co-3D-printed to create complex, multimaterial constructs, but that composite inks of HB and 3DG can also be synthesized. Specifically, the printability, microstructural, mechanical, electrical, and biological properties of a hybrid material comprised of 1:1 HA:graphene by volume is investigated. The resulting HB-3DG hybrid exhibits mixed characteristics of the two distinct systems, while maintaining 3D-printability, electrical conductivity, and flexibility. In vitro assessment of HB-3DG using mesenchymal stem cells demonstrates the hybrid material supports cell viability and proliferation, as well as significantly upregulates both osteogenic and neurogenic gene expression over 14 days. This work ultimately demonstrates a significant step forward towards being able to 3D-print graded, multicompositional, and multifunctional constructs from hybrid inks for complex composite tissue engineering. © 2016 Wiley Periodicals, Inc. J Biomed Mater Res Part A: 105A: 274-283, 2017. © 2016 Wiley Periodicals, Inc.

The influence of printing parameters on cell survival rate and printability in microextrusion-based 3D cell printing technology.

PubMed

Zhao, Yu; Li, Yang; Mao, Shuangshuang; Sun, Wei; Yao, Rui

2015-11-02

Three-dimensional (3D) cell printing technology has provided a versatile methodology to fabricate cell-laden tissue-like constructs and in vitro tissue/pathological models for tissue engineering, drug testing and screening applications. However, it still remains a challenge to print bioinks with high viscoelasticity to achieve long-term stable structure and maintain high cell survival rate after printing at the same time. In this study, we systematically investigated the influence of 3D cell printing parameters, i.e. composition and concentration of bioink, holding temperature and holding time, on the printability and cell survival rate in microextrusion-based 3D cell printing technology. Rheological measurements were utilized to characterize the viscoelasticity of gelatin-based bioinks. Results demonstrated that the bioink viscoelasticity was increased when increasing the bioink concentration, increasing holding time and decreasing holding temperature below gelation temperature. The decline of cell survival rate after 3D cell printing process was observed when increasing the viscoelasticity of the gelatin-based bioinks. However, different process parameter combinations would result in the similar rheological characteristics and thus showed similar cell survival rate after 3D bioprinting process. On the other hand, bioink viscoelasticity should also reach a certain point to ensure good printability and shape fidelity. At last, we proposed a protocol for 3D bioprinting of temperature-sensitive gelatin-based hydrogel bioinks with both high cell survival rate and good printability. This research would be useful for biofabrication researchers to adjust the 3D bioprinting process parameters quickly and as a referable template for designing new bioinks.

A Printing-Centric Approach to the Electrostatic Modification of Polymer/Clay Composites for use in 3D Direct-Ink Writing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rauzan, Brittany; Lehman, Sean; McCracken, Josell

Polymer/clay composite inks are exceptionally useful materials for fabrication processes based on 3D direct-ink writing, however, there remains an insufficient understanding of how their physiochemical dynamics impact printability. Using a model system, N-isopropylacrylamide/Laponite, the electrostatic interactions between Laponite platelets are modified to tune critical rheological properties in order to improve printability. Rheological measurements and X-ray scattering experiments are carried out to monitor the nano/micro-structural dynamics and complex physicochemical interactions of Laponite as it impacts complex modulus in the linear region, flow behavior, thixotropy, and yield stress of the composite ink. Modification of the electrostatic interactions between platelets reduces the yieldmore » stress of the material, while maintaining a complex microstructure that allows for sufficient recovery times upon removal of stress to form stable, and thus printable, filaments. A printing-centric approach is established based on a fundamental understanding of electrostatic inter-particle interactions, harnessing the innate microstructure of Laponite in 3D direct-ink writing of composites.« less

Printable Fabrication of Nanocoral-Structured Electrodes for High-Performance Flexible and Planar Supercapacitor with Artistic Design.

PubMed

Lin, Yuanjing; Gao, Yuan; Fan, Zhiyong

2017-11-01

Planar supercapacitors with high flexibility, desirable operation safety, and high performance are considered as attractive candidates to serve as energy-storage devices for portable and wearable electronics. Here, a scalable and printable technique is adopted to construct novel and unique hierarchical nanocoral structures as the interdigitated electrodes on flexible substrates. The as-fabricated flexible all-solid-state planar supercapacitors with nanocoral structures achieve areal capacitance up to 52.9 mF cm -2 , which is 2.5 times that of devices without nanocoral structures, and this figure-of-merit is among the highest in the literature for the same category of devices. More interestingly, due to utilization of the inkjet-printing technique, excellent versatility on electrode-pattern artistic design is achieved. Particularly, working supercapacitors with artistically designed patterns are demonstrated. Meanwhile, the high scalability of such a printable method is also demonstrated by fabrication of large-sized artistic supercapacitors serving as energy-storage devices in a wearable self-powered system as a proof of concept. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Advanced in-production hotspot prediction and monitoring with micro-topography

NASA Astrophysics Data System (ADS)

Fanton, P.; Hasan, T.; Lakcher, A.; Le-Gratiet, B.; Prentice, C.; Simiz, J.-G.; La Greca, R.; Depre, L.; Hunsche, S.

2017-03-01

At 28nm technology node and below, hot spot prediction and process window control across production wafers have become increasingly critical to prevent hotspots from becoming yield-limiting defects. We previously established proof of concept for a systematic approach to identify the most critical pattern locations, i.e. hotspots, in a reticle layout by computational lithography and combining process window characteristics of these patterns with across-wafer process variation data to predict where hotspots may become yield impacting defects [1,2]. The current paper establishes the impact of micro-topography on a 28nm metal layer, and its correlation with hotspot best focus variations across a production chip layout. Detailed topography measurements are obtained from an offline tool, and pattern-dependent best focus (BF) shifts are determined from litho simulations that include mask-3D effects. We also establish hotspot metrology and defect verification by SEM image contour extraction and contour analysis. This enables detection of catastrophic defects as well as quantitative characterization of pattern variability, i.e. local and global CD uniformity, across a wafer to establish hotspot defect and variability maps. Finally, we combine defect prediction and verification capabilities for process monitoring by on-product, guided hotspot metrology, i.e. with sampling locations being determined from the defect prediction model and achieved prediction accuracy (capture rate) around 75%

Preliminary results for mask metrology using spatial heterodyne interferometry

NASA Astrophysics Data System (ADS)

Bingham, Philip R.; Tobin, Kenneth; Bennett, Marylyn H.; Marmillion, Pat

2003-12-01

Spatial heterodyne interferometry (SHI) is an imaging technique that captures both the phase and amplitude of a complex wavefront in a single high-speed image. This technology was developed at the Oak Ridge National Laboratory (ORNL) and is currently being implemented for semiconductor wafer inspection by nLine Corporation. As with any system that measures phase, metrology and inspection of surface structures is possible by capturing a wavefront reflected from the surface. The interpretation of surface structure heights for metrology applications can become very difficult with the many layers of various materials used on semiconductor wafers, so inspection (defect detection) has been the primary focus for semiconductor wafers. However, masks used for photolithography typically only contain a couple well-defined materials opening the doors to high-speed mask metrology in 3 dimensions in addition to inspection. Phase shift masks often contain structures etched out of the transparent substrate material for phase shifting. While these structures are difficult to inspect using only intensity, the phase and amplitude images captured with SHI can produce very good resolution of these structures. The phase images also provide depth information that is crucial for these phase shift regions. Preliminary testing has been performed to determine the feasibility of SHI for high-speed non-contact mask metrology using a prototype SHI system with 532 nm wavelength illumination named the Visible Alpha Tool (VAT). These results show that prototype SHI system is capable of performing critical dimension measurements on 400nm lines with a repeatability of 1.4nm and line height measurements with a repeatability of 0.26nm. Additionally initial imaging of an alternating aperture phase shift mask has shown the ability of SHI to discriminate between typical phase shift heights.

Impact of defective pixels in AMLCDs on the perception of medical images

NASA Astrophysics Data System (ADS)

Kimpe, Tom; Sneyders, Yuri

2006-03-01

With LCD displays, each pixel has its own individual transistor that controls the transmittance of that pixel. Occasionally, these individual transistors will short or alternatively malfunction, resulting in a defective pixel that always shows the same brightness. With ever increasing resolution of displays the number of defect pixels per display increases accordingly. State of the art processes are capable of producing displays with no more than one faulty transistor out of 3 million. A five Mega Pixel medical LCD panel contains 15 million individual sub pixels (3 sub pixels per pixel), each having an individual transistor. This means that a five Mega Pixel display on average will have 5 failing pixels. This paper investigates the visibility of defective pixels and analyzes the possible impact of defective pixels on the perception of medical images. JND simulations were done to study the effect of defective pixels on medical images. Our results indicate that defective LCD pixels can mask subtle features in medical images in an unexpectedly broad area around the defect and therefore may reduce the quality of diagnosis for specific high-demanding areas such as mammography. As a second contribution an innovative solution is proposed. A specialized image processing algorithm can make defective pixels completely invisible and moreover can also recover the information of the defect so that the radiologist perceives the medical image correctly. This correction algorithm has been validated with both JND simulations and psycho visual tests.

Teaching earth science

USGS Publications Warehouse

Alpha, Tau Rho; Diggles, Michael F.

1998-01-01

This CD-ROM contains 17 teaching tools: 16 interactive HyperCard 'stacks' and a printable model. They are separated into the following categories: Geologic Processes, Earthquakes and Faulting, and Map Projections and Globes. A 'navigation' stack, Earth Science, is provided as a 'launching' place from which to access all of the other stacks. You can also open the HyperCard Stacks folder and launch any of the 16 stacks yourself. In addition, a 17th tool, Earth and Tectonic Globes, is provided as a printable document. Each of the tools can be copied onto a 1.4-MB floppy disk and distributed freely.

Microelectronic components and metallic oxide studies and applications

NASA Technical Reports Server (NTRS)

Williams, L., Jr.

1976-01-01

The project involved work in two basic areas: (1) Evaluation of commercial screen printable thick film conductors, resistors, thermistors and dielectrics as well as alumina substrates used in hybird microelectronics industries. Results of tests made on materials produced by seven companies are presented. (2) Experimental studies on metallic oxides of copper and vanadium, in an effort to determine their electrochemical properties in crystalline, powder mixtures and as screen printable thick films constituted the second phase of the research effort. Oxide investigations were aimed at finding possible applications of these materials as switching devices memory elements and sensors.

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2014-01-01

Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2016-01-01

Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

High throughput nanoimprint lithography for semiconductor memory applications

NASA Astrophysics Data System (ADS)

Ye, Zhengmao; Zhang, Wei; Khusnatdinov, Niyaz; Stachowiak, Tim; Irving, J. W.; Longsine, Whitney; Traub, Matthew; Fletcher, Brian; Liu, Weijun

2017-03-01

Imprint lithography is a promising technology for replication of nano-scale features. For semiconductor device applications, Canon deposits a low viscosity resist on a field by field basis using jetting technology. A patterned mask is lowered into the resist fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. There are two critical components to meeting throughput requirements for imprint lithography. Using a similar approach to what is already done for many deposition and etch processes, imprint stations can be clustered to enhance throughput. The FPA-1200NZ2C is a four station cluster system designed for high volume manufacturing. For a single station, throughput includes overhead, resist dispense, resist fill time (or spread time), exposure and separation. Resist exposure time and mask/wafer separation are well understood processing steps with typical durations on the order of 0.10 to 0.20 seconds. To achieve a total process throughput of 17 wafers per hour (wph) for a single station, it is necessary to complete the fluid fill step in 1.2 seconds. For a throughput of 20 wph, fill time must be reduced to only one 1.1 seconds. There are several parameters that can impact resist filling. Key parameters include resist drop volume (smaller is better), system controls (which address drop spreading after jetting), Design for Imprint or DFI (to accelerate drop spreading) and material engineering (to promote wetting between the resist and underlying adhesion layer). In addition, it is mandatory to maintain fast filling, even for edge field imprinting. In this paper, we address the improvements made in all of these parameters to first enable a 1.20 second filling process for a device like pattern and have demonstrated this capability for both full fields and edge fields. Non-fill defectivity is well under 1.0 defects/cm2 for both field types. Next, by further reducing drop volume and optimizing drop patterns, a fill time of 1.1 seconds was demonstrated.

Maskless, reticle-free, lithography

DOEpatents

Ceglio, N.M.; Markle, D.A.

1997-11-25

A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies. 7 figs.

Maskless, reticle-free, lithography

DOEpatents

Ceglio, Natale M.; Markle, David A.

1997-11-25

A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies.

Recombinant human osteogenic protein-1 (OP-1) stimulates periodontal wound healing in class III furcation defects.

PubMed

Giannobile, W V; Ryan, S; Shih, M S; Su, D L; Kaplan, P L; Chan, T C

1998-02-01

Osteogenic protein-1 (OP-1) is a member of the transforming growth factor beta superfamily and is a potent modulator of osteogenesis and bone cell differentiation. This preclinical study in dogs sought to assess the effects of OP-1 on periodontal wound healing in surgically created critical size Class III furcation defects. Eighteen male beagle dogs were subjected to the creation of bilateral mandibular 5 mm osseous defects. A split-mouth design was utilized which randomly assigned opposing quadrants to control therapy (surgery alone or collagen vehicle) or 1 of 3 ascending concentrations of OP-1 in a collagen vehicle (0.75 mg OP-1/g collagen, 2.5 mg/g, or 7.5 mg/g). Thus, 9 quadrants per test group received OP-1, 9 quadrants per control group received surgery alone, and 9 quadrants received collagen vehicle alone. Test articles were delivered by a surgeon masked to the treatment, and fluorogenic bone labels were injected at specified intervals post-treatment. Eight weeks after defect creation and OP-1 delivery, tissue blocks of the mandibulae were taken for masked histomorphometric analysis to assess parameters of periodontal regeneration (e.g., bone height, bone area, new attachment formation, and percent of defect filled with new bone). Histomorphometry revealed limited evidence of osteogenesis, cementogenesis, and new attachment formation in either vehicle or surgery-alone sites. In contrast, sites treated with all 3 concentrations of OP-1 showed pronounced stimulation of osteogenesis, regenerative cementum, and new attachment formation. Lesions treated with 7.5 mg/g of OP-1 in collagen regenerated 3.9+/-1.7 mm and 6.1+/-3.4 mm2 (mean +/-S.D.) of linear bone height and bone area, respectively. Furthermore, these differences were statistically different from both control therapies for all wound healing parameters (P < 0.0001). No significant increase in tooth root ankylosis was found among the treatment groups when compared to the surgery-alone group. We conclude that OP-1 offers promise as an attractive candidate for treating severe periodontal lesions.

Automatic OPC repair flow: optimized implementation of the repair recipe

NASA Astrophysics Data System (ADS)

Bahnas, Mohamed; Al-Imam, Mohamed; Word, James

2007-10-01

Virtual manufacturing that is enabled by rapid, accurate, full-chip simulation is a main pillar in achieving successful mask tape-out in the cutting-edge low-k1 lithography. It facilitates detecting printing failures before a costly and time-consuming mask tape-out and wafer print occur. The OPC verification step role is critical at the early production phases of a new process development, since various layout patterns will be suspected that they might to fail or cause performance degradation, and in turn need to be accurately flagged to be fed back to the OPC Engineer for further learning and enhancing in the OPC recipe. At the advanced phases of the process development, there is much less probability of detecting failures but still the OPC Verification step act as the last-line-of-defense for the whole RET implemented work. In recent publication the optimum approach of responding to these detected failures was addressed, and a solution was proposed to repair these defects in an automated methodology and fully integrated and compatible with the main RET/OPC flow. In this paper the authors will present further work and optimizations of this Repair flow. An automated analysis methodology for root causes of the defects and classification of them to cover all possible causes will be discussed. This automated analysis approach will include all the learning experience of the previously highlighted causes and include any new discoveries. Next, according to the automated pre-classification of the defects, application of the appropriate approach of OPC repair (i.e. OPC knob) on each classified defect location can be easily selected, instead of applying all approaches on all locations. This will help in cutting down the runtime of the OPC repair processing and reduce the needed number of iterations to reach the status of zero defects. An output report for existing causes of defects and how the tool handled them will be generated. The report will with help further learning and facilitate the enhancement of the main OPC recipe. Accordingly, the main OPC recipe can be more robust, converging faster and probably in a fewer number of iterations. This knowledge feedback loop is one of the fruitful benefits of the Automatic OPC Repair flow.

Printable, flexible and stretchable diamond for thermal management

DOEpatents

Rogers, John A; Kim, Tae Ho; Choi, Won Mook; Kim, Dae Hyeong; Meitl, Matthew; Menard, Etienne; Carlisle, John

2013-06-25

Various heat-sinked components and methods of making heat-sinked components are disclosed where diamond in thermal contact with one or more heat-generating components are capable of dissipating heat, thereby providing thermally-regulated components. Thermally conductive diamond is provided in patterns capable of providing efficient and maximum heat transfer away from components that may be susceptible to damage by elevated temperatures. The devices and methods are used to cool flexible electronics, integrated circuits and other complex electronics that tend to generate significant heat. Also provided are methods of making printable diamond patterns that can be used in a range of devices and device components.

One-Step Solvent Evaporation-Assisted 3D Printing of Piezoelectric PVDF Nanocomposite Structures.

PubMed

Bodkhe, Sampada; Turcot, Gabrielle; Gosselin, Frederick P; Therriault, Daniel

2017-06-21

Development of a 3D printable material system possessing inherent piezoelectric properties to fabricate integrable sensors in a single-step printing process without poling is of importance to the creation of a wide variety of smart structures. Here, we study the effect of addition of barium titanate nanoparticles in nucleating piezoelectric β-polymorph in 3D printable polyvinylidene fluoride (PVDF) and fabrication of the layer-by-layer and self-supporting piezoelectric structures on a micro- to millimeter scale by solvent evaporation-assisted 3D printing at room temperature. The nanocomposite formulation obtained after a comprehensive investigation of composition and processing techniques possesses a piezoelectric coefficient, d 31 , of 18 pC N -1 , which is comparable to that of typical poled and stretched commercial PVDF film sensors. A 3D contact sensor that generates up to 4 V upon gentle finger taps demonstrates the efficacy of the fabrication technique. Our one-step 3D printing of piezoelectric nanocomposites can form ready-to-use, complex-shaped, flexible, and lightweight piezoelectric devices. When combined with other 3D printable materials, they could serve as stand-alone or embedded sensors in aerospace, biomedicine, and robotic applications.

Synergy of ammonium chloride and moisture on perovskite crystallization for efficient printable mesoscopic solar cells

PubMed Central

Rong, Yaoguang; Hou, Xiaomeng; Hu, Yue; Mei, Anyi; Liu, Linfeng; Wang, Ping; Han, Hongwei

2017-01-01

Organometal lead halide perovskites have been widely used as the light harvester for high-performance solar cells. However, typical perovskites of methylammonium lead halides (CH3NH3PbX3, X=Cl, Br, I) are usually sensitive to moisture in ambient air, and thus require an inert atmosphere to process. Here we demonstrate a moisture-induced transformation of perovskite crystals in a triple-layer scaffold of TiO2/ZrO2/Carbon to fabricate printable mesoscopic solar cells. An additive of ammonium chloride (NH4Cl) is employed to assist the crystallization of perovskite, wherein the formation and transition of intermediate CH3NH3X·NH4PbX3(H2O)2 (X=I or Cl) enables high-quality perovskite CH3NH3PbI3 crystals with preferential growth orientation. Correspondingly, the intrinsic perovskite devices based on CH3NH3PbI3 achieve an efficiency of 15.6% and a lifetime of over 130 days in ambient condition with 30% relative humidity. This ambient-processed printable perovskite solar cell provides a promising prospect for mass production, and will promote the development of perovskite-based photovoltaics. PMID:28240286

Research on the printability of hydrogels in 3D bioprinting

PubMed Central

He, Yong; Yang, FeiFei; Zhao, HaiMing; Gao, Qing; Xia, Bing; Fu, JianZhong

2016-01-01

As the biocompatible materials, hydrogels have been widely used in three- dimensional (3D) bioprinting/organ printing to load cell for tissue engineering. It is important to precisely control hydrogels deposition during printing the mimic organ structures. However, the printability of hydrogels about printing parameters is seldom addressed. In this paper, we systemically investigated the printability of hydrogels from printing lines (one dimensional, 1D structures) to printing lattices/films (two dimensional, 2D structures) and printing 3D structures with a special attention to the accurate printing. After a series of experiments, we discovered the relationships between the important factors such as air pressure, feedrate, or even printing distance and the printing quality of the expected structures. Dumbbell shape was observed in the lattice structures printing due to the hydrogel diffuses at the intersection. Collapses and fusion of adjacent layer would result in the error accumulation at Z direction which was an important fact that could cause printing failure. Finally, we successfully demonstrated a 3D printing hydrogel scaffold through harmonize with all the parameters. The cell viability after printing was compared with the casting and the results showed that our bioprinting method almost had no extra damage to the cells. PMID:27436509

Research on the printability of hydrogels in 3D bioprinting

NASA Astrophysics Data System (ADS)

He, Yong; Yang, Feifei; Zhao, Haiming; Gao, Qing; Xia, Bing; Fu, Jianzhong

2016-07-01

As the biocompatible materials, hydrogels have been widely used in three- dimensional (3D) bioprinting/organ printing to load cell for tissue engineering. It is important to precisely control hydrogels deposition during printing the mimic organ structures. However, the printability of hydrogels about printing parameters is seldom addressed. In this paper, we systemically investigated the printability of hydrogels from printing lines (one dimensional, 1D structures) to printing lattices/films (two dimensional, 2D structures) and printing 3D structures with a special attention to the accurate printing. After a series of experiments, we discovered the relationships between the important factors such as air pressure, feedrate, or even printing distance and the printing quality of the expected structures. Dumbbell shape was observed in the lattice structures printing due to the hydrogel diffuses at the intersection. Collapses and fusion of adjacent layer would result in the error accumulation at Z direction which was an important fact that could cause printing failure. Finally, we successfully demonstrated a 3D printing hydrogel scaffold through harmonize with all the parameters. The cell viability after printing was compared with the casting and the results showed that our bioprinting method almost had no extra damage to the cells.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pina-Hernandez, Carlos; Koshelev, Alexander; Dhuey, Scott

A novel method to realizing printed active photonic devices was developed using nanoimprint lithography (NIL), combining a printable high-refractive index material and colloidal CdSe/CdS quantum dots (QDs) for applications in the visible region. Active media QDs were applied in two different ways: embedded inside a printable high-refractive index matrix to form an active printable hybrid nanocomposite, and used as a uniform coating on top of printed photonic devices. As a proof-of-demonstration for printed active photonic devices, two-dimensional (2-D) photonic crystals as well as 1D and 2D photonic nanocavities were successfully fabricated following a simple reverse-nanoimprint process. We observed enhanced photoluminescencemore » from the 2D photonic crystal and the 1D nanocavities. Outstandingly, the process presented in this study is fully compatible with large-scale manufacturing where the patterning areas are only limited by the size of the corresponding mold. This work shows that the integration of active media and functional materials is a promising approach to the realization of integrated photonics for visible light using high throughput technologies. We believe that this work represents a powerful and cost-effective route for the development of numerous nanophotonic structures and devices that will lead to the emergence of new applications.« less

'Printability' of Candidate Biomaterials for Extrusion Based 3D Printing: State-of-the-Art.

PubMed

Kyle, Stuart; Jessop, Zita M; Al-Sabah, Ayesha; Whitaker, Iain S

2017-08-01

Regenerative medicine has been highlighted as one of the UK's 8 'Great Technologies' with the potential to revolutionize patient care in the 21st Century. Over the last decade, the concept of '3D bioprinting' has emerged, which allows the precise deposition of cell laden bioinks with the aim of engineering complex, functional tissues. For 3D printing to be used clinically, there is the need to produce advanced functional biomaterials, a new generation of bioinks with suitable cell culture and high shape/print fidelity, to match or exceed the physical, chemical and biological properties of human tissue. With the rapid increase in knowledge associated with biomaterials, cell-scaffold interactions and the ability to biofunctionalize/decorate bioinks with cell recognition sequences, it is important to keep in mind the 'printability' of these novel materials. In this illustrated review, we define and refine the concept of 'printability' and review seminal and contemporary studies to highlight the current 'state of play' in the field with a focus on bioink composition and concentration, manipulation of nozzle parameters and rheological properties. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Pei-Yang; Zhang, Guojing; Gullickson, Eric M.

Extreme ultraviolet lithography (EUVL) mask multi-layer (ML) blank surface roughness specification historically comes from blank defect inspection tool requirement. Later, new concerns on ML surface roughness induced wafer pattern line width roughness (LWR) arise. In this paper, we have studied wafer level pattern LWR as a function of EUVL mask surface roughness via High-NA Actinic Reticle Review Tool. We found that the blank surface roughness induced LWR at current blank roughness level is in the order of 0.5nm 3σ for NA=0.42 at the best focus. At defocus of ±40nm, the corresponding LWR will be 0.2nm higher. Further reducing EUVL maskmore » blank surface roughness will increase the blank cost with limited benefit in improving the pattern LWR, provided that the intrinsic resist LWR is in the order of 1nm and above.« less

Defect window analysis by using SEM-contour based shape quantifying method for sub-20nm node production

NASA Astrophysics Data System (ADS)

Hibino, Daisuke; Hsu, Mingyi; Shindo, Hiroyuki; Izawa, Masayuki; Enomoto, Yuji; Lin, J. F.; Hu, J. R.

2013-04-01

The impact on yield loss due to systematic defect which remains after Optical Proximity Correction (OPC) modeling has increased, and achieving an acceptable yield has become more difficult in the leading technology beyond 20 nm node production. Furthermore Process-Window has become narrow because of the complexity of IC design and less process margin. In the past, the systematic defects have been inspected by human-eyes. However the judgment by human-eyes is sometime unstable and not accurate. Moreover an enormous amount of time and labor will have to be expended on the one-by-one judgment for several thousands of hot-spot defects. In order to overcome these difficulties and improve the yield and manufacturability, the automated system, which can quantify the shape difference with high accuracy and speed, is needed. Inspection points could be increased for getting higher yield, if the automated system achieves our goal. Defect Window Analysis (DWA) system by using high-precision-contour extraction from SEM image on real silicon and quantifying method which can calculate the difference between defect pattern and non-defect pattern automatically, which was developed by Hitachi High-Technologies, has been applied to the defect judgment instead of the judgment by human-eyes. The DWA result which describes process behavior might be feedback to design or OPC or mask. This new methodology and evaluation results will be presented in detail in this paper.

X-Ray Diffraction Wafer Mapping Method for Rhombohedral Super-Hetero-Epitaxy

NASA Technical Reports Server (NTRS)

Park, Yoonjoon; Choi, Sang Hyouk; King, Glen C.; Elliott, James R.; Dimarcantonio, Albert L.

2010-01-01

A new X-ray diffraction (XRD) method is provided to acquire XY mapping of the distribution of single crystals, poly-crystals, and twin defects across an entire wafer of rhombohedral super-hetero-epitaxial semiconductor material. In one embodiment, the method is performed with a point or line X-ray source with an X-ray incidence angle approximating a normal angle close to 90 deg, and in which the beam mask is preferably replaced with a crossed slit. While the wafer moves in the X and Y direction, a narrowly defined X-ray source illuminates the sample and the diffracted X-ray beam is monitored by the detector at a predefined angle. Preferably, the untilted, asymmetric scans are of {440} peaks, for twin defect characterization.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Naulleau, Patrick; Mochi, Iacopo; Goldberg, Kenneth A.

Defect free masks remain one of the most significant challenges facing the commercialization of extreme ultraviolet (EUV) lithography. Progress on this front requires high-performance wavelength-specific metrology of EUV masks, including high-resolution and aerial-image microscopy performed near the 13.5 nm wavelength. Arguably the most cost-effective and rapid path to proliferating this capability is through the development of Fresnel zoneplate-based microscopes. Given the relative obscurity of such systems, however, modeling tools are not necessarily optimized to deal with them and their imaging properties are poorly understood. Here we present a modeling methodology to analyze zoneplate microscopes based on commercially available optical modelingmore » software and use the technique to investigate the imaging performance of an off-axis EUV microscope design. The modeling predicts that superior performance can be achieved by tilting the zoneplate, making it perpendicular to the chief ray at the center of the field, while designing the zoneplate to explicitly work in that tilted plane. Although the examples presented here are in the realm of EUV mask inspection, the methods described and analysis results are broadly applicable to zoneplate microscopes in general, including full-field soft-x-ray microscopes rou tinely used in the synchrotron community.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Naulleau, Patrick P.; Mochi, Iacopo; Goldberg, Kenneth A.

Defect free masks remain one of the most significant challenges facing the commercialization of extreme ultraviolet (EUV) lithography. Progress on this front requires high-performance wavelength-specific metrology of EUV masks, including high-resolution and aerial-image microscopy performed near the 13.5 nm wavelength. Arguably the most cost-effective and rapid path to proliferating this capability is through the development of Fresnel zoneplate-based microscopes. Given the relative obscurity of such systems, however, modeling tools are not necessarily optimized to deal with them and their imaging properties are poorly understood. Here we present a modeling methodology to analyze zoneplate microscopes based on commercially available optical modelingmore » software and use the technique to investigate the imaging performance of an off-axis EUV microscope design. The modeling predicts that superior performance can be achieved by tilting the zoneplate, making it perpendicular to the chief ray at the center of the field, while designing the zoneplate to explicitly work in that tilted plane. Although the examples presented here are in the realm of EUV mask inspection, the methods described and analysis results are broadly applicable to zoneplate microscopes in general, including full-field soft-x-ray microscopes routinely used in the synchrotron community.« less

Graphene films printable on flexible substrates for sensor applications

NASA Astrophysics Data System (ADS)

Banerjee, Indrani; Faris, Tsegie; Stoeva, Zlatka; Harris, Paul G.; Chen, J.; Sharma, Ashwani K.; Ray, Asim K.

2017-03-01

Fifteen-layered graphene films have been successfully deposited onto flexible substrates using a commercial ink consisting of graphene particles dispersed in an acrylic polymer binder. A value of 74.9× {10}5 {{{cm}}}-2 was obtained for the density of defects, primarily located at the flake edges, from the ratio of the D and G Raman peaks located at 1345 {{{cm}}}-1 and 1575 {{{cm}}}-1 respectively. 0.5 {μ }{{m}} thick drop-cast films on interdigitated silver electrodes exhibited Ohmic conduction with a small activation energy of 12 meV over the temperature range from 260 to 330 {{K}}. The photo-thermoelectric effect is believed to be responsible for photoconduction through graphene films under illumination intensity of 10 mW m-2 at 270 {{nm}}, corresponding to the UV absorption peak. The photo-transient decay at the bias of 1 {{V}} involves two relaxation processes when the illumination is switched off and values of 8.9× {10}3 and 4.3× {10}4 {{s}} are found for the relaxation time constant using the Kohlrauch stretched exponential function analysis.

Multiple large infected scrotal sebaceous cysts masking Fournier's gangrene in a 32-year-old man

PubMed Central

Angus, William; Mistry, Rahul; Floyd, Michael S; Machin, Derek G

2012-01-01

Extensive large sebaceous cysts on the scotum are rare and present a problem only when infected or when cosmesis is deemed unacceptable by the patient. Fournier's gangrene is an infective condition with a high death rate. We describe a case of Fournier's gangrene in a patient masked by multiple large infected scrotal sebaceous cysts. A 32-year-old man with a history of alcohol dependency, cirrhosis and multiple scrotal sebaceous cysts presented with acute scrotal pain and erythema. Necrosis of the area became evident within 12 h of his admission and an emergency surgical debridement was performed. The wound was left open to heal via secondary intention over 4 weeks without complication. Fournier's gangrene is a rapidly progressive condition and early surgical debridement is crucial to achieve satisfactory outcomes. In this case, prompt intervention allowed a large scrotal defect to heal without the need for skin grafting. PMID:22669874

Titanium induced polarity inversion in ordered (In,Ga)N/GaN nanocolumns.

PubMed

Kong, X; Li, H; Albert, S; Bengoechea-Encabo, A; Sanchez-Garcia, M A; Calleja, E; Draxl, C; Trampert, A

2016-02-12

We report on the formation of polarity inversion in ordered (In,Ga)N/GaN nanocolumns grown on a Ti-masked GaN-buffered sapphire substrate by plasma assisted molecular beam epitaxy. High-resolution transmission electron microscopy and electron energy-loss spectroscopy reveal a stacking fault-like planar defect at the homoepitaxial GaN interface due to Ti incorporation, triggering the generation of N-polar domains in Ga-polar nanocolumns. Density functional theory calculations are applied to clarify the atomic configurations of a Ti monolayer occupation on the GaN (0002) plane and to prove the inversion effect. The polarity inversion leads to an enhanced indium incorporation in the subsequent (In,Ga)N segment of the nanocolumn. This study provides a deeper understanding of the effects of Ti mask in the well-controlled selective area growth of (In,Ga)N/GaN nanocolumns.

The use of computational inspection to identify process window limiting hotspots and predict sub-15nm defects with high capture rate

NASA Astrophysics Data System (ADS)

Ham, Boo-Hyun; Kim, Il-Hwan; Park, Sung-Sik; Yeo, Sun-Young; Kim, Sang-Jin; Park, Dong-Woon; Park, Joon-Soo; Ryu, Chang-Hoon; Son, Bo-Kyeong; Hwang, Kyung-Bae; Shin, Jae-Min; Shin, Jangho; Park, Ki-Yeop; Park, Sean; Liu, Lei; Tien, Ming-Chun; Nachtwein, Angelique; Jochemsen, Marinus; Yan, Philip; Hu, Vincent; Jones, Christopher

2017-03-01

As critical dimensions for advanced two dimensional (2D) DUV patterning continue to shrink, the exact process window becomes increasingly difficult to determine. The defect size criteria shrink with the patterning critical dimensions and are well below the resolution of current optical inspection tools. As a result, it is more challenging for traditional bright field inspection tools to accurately discover the hotspots that define the process window. In this study, we use a novel computational inspection method to identify the depth-of-focus limiting features of a 10 nm node mask with 2D metal structures (single exposure) and compare the results to those obtained with a traditional process windows qualification (PWQ) method based on utilizing a focus modulated wafer and bright field inspection (BFI) to detect hotspot defects. The method is extended to litho-etch litho-etch (LELE) on a different test vehicle to show that overlay related bridging hotspots also can be identified.

Top-coatless 193nm positive-tone development immersion resist for logic application

NASA Astrophysics Data System (ADS)

Liu, Lian Cong; Yeh, Tsung Ju; Lin, Yeh-Sheng; Huang, Yu Chin; Kuo, Chien Wen; Huang, Wen Liang; Lin, Chia Hung; Yu, Chun Chi; Hsu, Ray; Wan, I.-Yuan; Lin, Jeff; Im, Kwang-Hwyi; Lim, Hae Jin; Jeon, Hyun K.; Suzuki, Yasuhiro; Xu, Cheng Bai

2015-03-01

In this paper, we summarize our development efforts for a top-coatless 193nm immersion positive tone development (PTD) contact hole (C/H) resist with improved litho and defect performances for logic application specifically with an advance node. The ultimate performance goal was to improve the depth of focus (DoF) margin, mask error enhancement factor (MEEF), critical dimension uniformity (CDU), contact edge roughness (CER), and defect performance. Also, the through pitch CD difference was supposed to be comparable to the previous control resist. Effects of polymer and PAG properties have been evaluated for this purpose. The material properties focused in the evaluation study were polymer activation energy (Ea), polymer solubility differentiated by polymerization process types, and diffusion length (DL) and acidity (pKa) of photoacid generator (PAG). Additionally, the impact of post exposure bake (PEB) temperature was investigated for process condition optimization. As a result of this study, a new resist formulation to satisfy all litho and defect performance was developed and production yield was further improved.

A general method to improve 3D-printability and inter-layer adhesion in lignin-based composites

DOE PAGES

Nguyen, Ngoc A.; Bowland, Christopher C.; Naskar, Amit K.

2018-05-02

Here, we report the utilization of a melt-stable lignin waste-stream from biorefineries as a renewable feedstock, with acrylonitrile-butadiene rubber and acrylonitrile-butadiene-styrene (ABS) polymer to synthesize a renewable matrix having excellent 3D-printability. While the initial low melt viscosity of the dispersed lignin phase induces local thermo-rheological relaxation facilitating the composite's melt flow, thermal crosslinking in both lignin and rubber phases as well as at the lignin-rubber interface decreases the molecular mobility. Consequently, interfacial diffusion and the resulting adhesion between deposited layers is decreased. However, addition of 10 wt.% of discontinuous carbon fibers (CFs) within the green composites not only significantly enhancesmore » the material performance but also lowers the degree of chemical crosslinking formed in the matrix during melt-phase synthesis. Furthermore, abundant functional groups including hydroxyl (from lignin) and nitrile (from rubber and ABS) allow combinations of hydrogen bonded structures where CFs play a critical bridging role between the deposited layers. As a result, a highly interfused printed structure with 100% improved inter-layer adhesion strength was obtained. This research offers a route toward utilizing lignin for replacement of petroleum-based thermoplastics used in additive manufacturing and methods to enhance printability of the materials with exceptional mechanical performance.« less

A general method to improve 3D-printability and inter-layer adhesion in lignin-based composites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Ngoc A.; Bowland, Christopher C.; Naskar, Amit K.

Here, we report the utilization of a melt-stable lignin waste-stream from biorefineries as a renewable feedstock, with acrylonitrile-butadiene rubber and acrylonitrile-butadiene-styrene (ABS) polymer to synthesize a renewable matrix having excellent 3D-printability. While the initial low melt viscosity of the dispersed lignin phase induces local thermo-rheological relaxation facilitating the composite's melt flow, thermal crosslinking in both lignin and rubber phases as well as at the lignin-rubber interface decreases the molecular mobility. Consequently, interfacial diffusion and the resulting adhesion between deposited layers is decreased. However, addition of 10 wt.% of discontinuous carbon fibers (CFs) within the green composites not only significantly enhancesmore » the material performance but also lowers the degree of chemical crosslinking formed in the matrix during melt-phase synthesis. Furthermore, abundant functional groups including hydroxyl (from lignin) and nitrile (from rubber and ABS) allow combinations of hydrogen bonded structures where CFs play a critical bridging role between the deposited layers. As a result, a highly interfused printed structure with 100% improved inter-layer adhesion strength was obtained. This research offers a route toward utilizing lignin for replacement of petroleum-based thermoplastics used in additive manufacturing and methods to enhance printability of the materials with exceptional mechanical performance.« less

Formulation development and process analysis of drug-loaded filaments manufactured via hot-melt extrusion for 3D-printing of medicines.

PubMed

Korte, Carolin; Quodbach, Julian

2018-02-09

Three dimensional(3D)-printing via fused deposition modeling (FDM) allows the production of individualized solid dosage forms. However, for bringing this benefit to the patient, active pharmaceutical ingredient (API)-loaded filaments of pharmaceutical grade excipients are necessary as feedstock and have to be produced industrially. As large-scale production of API-loaded filaments has not been described in literature, this study presents a development of 3D-printable filaments, which can continuously be produced via hot-melt extrusion. Further, a combination of testing methods for mechanical resilience of filaments was applied to improve the prediction of their printability. Eudragit RL was chosen as a sustained release polymer and theophylline (30%) as thermally stable model drug. Stearic acid (7%) and polyethylene glycol 4000 (10%), were evaluated as suitable plasticizers for producing 3D-printable filaments. The two formulations were printed into solid dosage forms and analyzed regarding their dissolution profiles. This revealed that stearic acid maintained sustained release properties of the matrix whereas polyethylene glycol 4000 did not. Analysis of the continuous extrusion process was done using a design of experiments. It showed that powder feed rate and speed of the stretching device used after extrusion predominantly determine the diameter of the filament and thereby the mechanical resilience of a filament.

Nanoimprinted High-Refractive Index Active Photonic Nanostructures Based on Quantum Dots for Visible Light

DOE PAGES

Pina-Hernandez, Carlos; Koshelev, Alexander; Dhuey, Scott; ...

2017-12-15

A novel method to realizing printed active photonic devices was developed using nanoimprint lithography (NIL), combining a printable high-refractive index material and colloidal CdSe/CdS quantum dots (QDs) for applications in the visible region. Active media QDs were applied in two different ways: embedded inside a printable high-refractive index matrix to form an active printable hybrid nanocomposite, and used as a uniform coating on top of printed photonic devices. As a proof-of-demonstration for printed active photonic devices, two-dimensional (2-D) photonic crystals as well as 1D and 2D photonic nanocavities were successfully fabricated following a simple reverse-nanoimprint process. We observed enhanced photoluminescencemore » from the 2D photonic crystal and the 1D nanocavities. Outstandingly, the process presented in this study is fully compatible with large-scale manufacturing where the patterning areas are only limited by the size of the corresponding mold. This work shows that the integration of active media and functional materials is a promising approach to the realization of integrated photonics for visible light using high throughput technologies. We believe that this work represents a powerful and cost-effective route for the development of numerous nanophotonic structures and devices that will lead to the emergence of new applications.« less

Epidermal growth factor in alkali-burned corneal epithelial wound healing.

PubMed

Singh, G; Foster, C S

1987-06-15

We conducted a double-masked study to evaluate the effect of epidermal growth factor on epithelial wound healing and recurrent erosions in alkali-burned rabbit corneas. Epithelial wounds 10 mm in diameter healed completely under the influence of topical epidermal growth factor, whereas the control corneas did not resurface in the center. On reversal of treatment, the previously nonhealing epithelial defects healed when treated with topical epidermal growth factor eyedrops. Conversely, the epidermal growth factor-treated and resurfaced corneas developed epithelial defects when treatment was discontinued. Histopathologic examination disclosed hyperplastic epithelium growing over the damaged stroma laden with polymorphonuclear leukocytes when treated with epidermal growth factor eyedrops, but it did not adhere to the underlying tissue. Hydropic changes were seen intracellularly as well as between the epithelial cells and the stroma.

Is resin infiltration an effective esthetic treatment for enamel development defects and white spot lesions? A systematic review.

PubMed

Borges, A B; Caneppele, T M F; Masterson, D; Maia, L C

2017-01-01

To determine if resin infiltration is an effective treatment for improving the esthetic appearance of tooth discoloration resulting from development defects of enamel (EDD) and white spot lesions (WSL) by means of a systematic review. A comprehensive search was performed in PubMed, Scopus, Web of Science, LILACS, BBO Library, Cochrane Library, and SIGLE, as well as in the abstracts of IADR conference, and in the clinical trials registry. Clinical studies in patients with whitish tooth discoloration, in which the resin infiltration technique was applied, were included. Color masking was the primary outcome. The methodological quality and risk of biases of included papers was assessed using MINORS criteria for non-randomized (NRS) comparative studies and Cochrane Collaboration for randomized clinical trials (RCT). From a total of 2930 articles, 17 were assessed for eligibility and 11 remained in the qualitative synthesis. Four NRS and seven RCT studies were selected, the latter consisting of four full-text studies and three conference abstracts. Two studies were excluded from the quality assessment, due to overlapping results. The number of participants (treated teeth) ranged from 18 to 21 (38-74) in the NRS, and 20-83 (20-231) in the RCT studies. Post-orthodontic WSL were the most frequent treated lesions. Initial condition was used as control in the NR studies. In the RCT, resin infiltration was compared to non treatment, remineralization, or bleaching. Overall, partial or complete color masking of affected teeth was reported immediately after resin infiltration. Only two studies followed original outcomes up to one year and reported maintenance of original color masking. Two NR studies were assessed as "moderate" and one as "high" quality. Two RCT were classified as "low" risk of bias in the chosen key domains. The remaining four studies were considered "unclear" or "high" risk of bias. Although the partial or total masking effect of enamel whitish discoloration has been shown with resin infiltration, there is no strong evidence to support this technique based on the present clinical studies. Enamel whitish discolorations in esthetically compromised areas are clinically undesirable. Minimally invasive approaches used as attempts to minimize the discoloration include the resin infiltration technique. The evidence for clinical recommendation of this technique is not strong, thus, further RCT studies with long-term follow-ups should be conducted. Copyright © 2016 Elsevier Ltd. All rights reserved.

A Novel Approach For Ankle Foot Orthosis Developed By Three Dimensional Technologies

NASA Astrophysics Data System (ADS)

Belokar, R. M.; Banga, H. K.; Kumar, R.

2017-12-01

This study presents a novel approach for testing mechanical properties of medical orthosis developed by three dimensional (3D) technologies. A hand-held type 3D laser scanner is used for generating 3D mesh geometry directly from patient’s limb. Subsequently 3D printable orthotic design is produced from crude input model by means of Computer Aided Design (CAD) software. Fused Deposition Modelling (FDM) method in Additive Manufacturing (AM) technologies is used to fabricate the 3D printable Ankle Foot Orthosis (AFO) prototype in order to test the mechanical properties on printout. According to test results, printed Acrylonitrile Butadiene Styrene (ABS) AFO prototype has sufficient elasticity modulus and durability for patient-specific medical device manufactured by the 3D technologies.

Effect of masking phase-only holograms on the quality of reconstructed images.

PubMed

Deng, Yuanbo; Chu, Daping

2016-04-20

A phase-only hologram modulates the phase of the incident light and diffracts it efficiently with low energy loss because of the minimum absorption. Much research attention has been focused on how to generate phase-only holograms, and little work has been done to understand the effect and limitation of their partial implementation, possibly due to physical defects and constraints, in particular as in the practical situations where a phase-only hologram is confined or needs to be sliced or tiled. The present study simulates the effect of masking phase-only holograms on the quality of reconstructed images in three different scenarios with different filling factors, filling positions, and illumination intensity profiles. Quantitative analysis confirms that the width of the image point spread function becomes wider and the image quality decreases, as expected, when the filling factor decreases, and the image quality remains the same for different filling positions as well. The width of the image point spread function as derived from different filling factors shows a consistent behavior to that as measured directly from the reconstructed image, especially as the filling factor becomes small. Finally, mask profiles of different shapes and intensity distributions are shown to have more complicated effects on the image point spread function, which in turn affects the quality and textures of the reconstructed image.

Investigation on characteristics of 3D printing using Nostoc sphaeroides biomass.

PubMed

An, Yan-Jun; Guo, Chao-Fan; Zhang, Min; Zhong, Ze-Ping

2018-06-27

Gel-like constructs can be produced using an extrusion-based 3D food printing (3D-FP) technique. Nostoc sphaeroides biomass is a natural gel material. Considering its good nutrition and rheological properties, these algae were chosen in this study as supply material (ink) for 3D-FP. With this gel material, the extrusion-based 3D printing system was set as a model, and the printing behavior was investigated. Furthermore, the 3D-FP mechanisms were explained through low-field nuclear magnetic resonance and rheological measurements. Results indicated that although fresh biomass gel was printable, nonuniformity and instability occurred during printing. Blanched inks showed nonsmooth printing behavior, which was associated with a decrease in elasticity and viscosity. The printability was improved by increasing the rehydration time to 24 h when rehydrated powder was used. Increasing the rehydration time increased the water-binding degree. Pre-gelatinized potato starch was added to the mixture at ratios ranging from 1 to 100 g kg -1 . The best printing outcome was observed at 40 g kg -1 potato starch. We emphasize that elasticity and viscosity balance is an essential parameter to achieve printability. The strategies adopted in this work provide new insights into the development of personalized food regarding texture and nutritional additive content. This article is protected by copyright. All rights reserved. This article is protected by copyright. All rights reserved.

Alkylamine capped metal nanoparticle "inks" for printable SERS substrates, electronics and broadband photodetectors.

PubMed

Polavarapu, Lakshminarayana; Manga, Kiran Kumar; Yu, Kuai; Ang, Priscilla Kailian; Cao, Hanh Duyen; Balapanuru, Janardhan; Loh, Kian Ping; Xu, Qing-Hua

2011-05-01

We report a facile and general method for the preparation of alkylamine capped metal (Au and Ag) nanoparticle "ink" with high solubility. Using these metal nanoparticle "inks", we have demonstrated their applications for large scale fabrication of highly efficient surface enhanced Raman scattering (SERS) substrates by a facile solution processing method. These SERS substrates can detect analytes down to a few nM. The flexible plastic SERS substrates have also been demonstrated. The annealing temperature dependent conductivity of the nanoparticle films indicated a transition temperature above which high conductivity was achieved. The transition temperature could be tailored to the plastic compatible temperatures by using proper alkylamine as the capping agent. The ultrafast electron relaxation studies of the nanoparticle films demonstrated that faster electron relaxation was observed at higher annealing temperatures due to stronger electronic coupling between the nanoparticles. The applications of these highly concentrated alkylamine capped metal nanoparticle inks for the printable electronics were demonstrated by printing the oleylamine capped gold nanoparticles ink as source and drain for the graphene field effect transistor. Furthermore, the broadband photoresponse properties of the Au and Ag nanoparticle films have been demonstrated by using visible and near-infrared lasers. These investigations demonstrate that these nanoparticle "inks" are promising for applications in printable SERS substrates, electronics, and broadband photoresponse devices. © The Royal Society of Chemistry 2011

Synthesis and Characterization of Types A and B Gelatin Methacryloyl for Bioink Applications

PubMed Central

Lee, Bae Hoon; Lum, Nathaniel; Seow, Li Yuan; Lim, Pei Qi; Tan, Lay Poh

2016-01-01

Gelatin methacryloyl (GelMA) has been increasingly considered as an important bioink material due to its tailorable mechanical properties, good biocompatibility, and ability to be photopolymerized in situ as well as printability. GelMA can be classified into two types: type A GelMA (a product from acid treatment) and type B GelMA (a product from alkali treatment). In current literature, there is little research on the comparison of type A GelMA and type B GelMA in terms of synthesis, rheological properties, and printability for bioink applications. Here, we report the synthesis, rheological properties, and printability of types A and B GelMA. Types A and B GelMA samples with different degrees of substitution (DS) were prepared in a controllable manner by a time-lapse loading method of methacrylic anhydride (MAA) and different feed ratios of MAA to gelatin. Type B GelMA tended to have a slightly higher DS compared to type A GelMA, especially in a lower feed ratio of MAA to gelatin. All the type A and type B GelMA solutions with different DS exhibited shear thinning behaviours at 37 °C. However, only GelMA with a high DS had an easy-to-extrude feature at room temperature. The cell-laden printed constructs of types A and B GelMA at 20% w/v showed around 75% cell viability. PMID:28773918

Yield stress determines bioprintability of hydrogels based on gelatin-methacryloyl and gellan gum for cartilage bioprinting

PubMed Central

Mouser, Vivian H. M.; Melchels, Ferry P.W.; Visser, Jetze; Dhert, Wouter J.A.; Gawlitta, Debby; Malda, Jos

2016-01-01

Bioprinting of chondrocyte-laden hydrogels facilitates the fabrication of constructs with controlled organization and shape for e.g. articular cartilage implants. Gelatin-methacryloyl (gelMA) supplemented with gellan gum is a promising bio-ink. However, the rheological properties governing the printing process, and the influence of gellan gum on the mechanical properties and chondrogenesis of the blend, are still unknown. Here, we investigated the suitability of gelMA/gellan for cartilage bioprinting. Multiple concentrations, ranging from 3-25% gelMA with 0-1.5% gellan gum, were evaluated for their printability, defined as the ability to form filaments and to incorporate cells at 15-37°C. To support the printability assessment, yield stress and viscosity of the hydrogels were measured. Stiffness of UV-cured constructs, as well as cartilage-like tissue formation by embedded chondrocytes, were determined in vitro. A large range of gelMA/gellan concentrations were printable with inclusion of cells and formed the bioprinting window. Addition of gellan gum improved filament deposition by inducing yielding behavior, increased construct stiffness, and supported chondrogenesis. High gellan gum concentrations, however, did compromise cartilage matrix production and distribution, and even higher concentrations resulted in too high yield stresses to allow cell encapsulation. This study demonstrates the high potential of gelMA/gellan blends for cartilage bioprinting and identifies yield stress as dominant factor for bioprintability. PMID:27431733

A step toward development of printable dosage forms for poorly soluble drugs.

PubMed

Raijada, Dhara; Genina, Natalja; Fors, Daniela; Wisaeus, Erik; Peltonen, Jouko; Rantanen, Jukka; Sandler, Niklas

2013-10-01

The purpose of this study was to formulate printable dosage forms for a poorly soluble drug (piroxicam; PRX) and to gain understanding of critical parameters to be considered during development of such dosage forms. Liquid formulations of PRX were printed on edible paper using piezoelectric inkjet printing (PIJ) and impression printing (flexography). The printed dosage forms were characterized using scanning electron microscopy with energy dispersive X-ray spectroscopy (SEM-EDX) and the amount of drug was determined using high-performance liquid chromatography. Solutions of PRX in polyethylene glycol 400 (PEG-400):ethanol (40:60) and in PEG-400 were found to be optimal formulations for PIJ and flexography, respectively. SEM-EDX analysis revealed no visible solid particles on the printed dosage forms indicating the drug most likely remained in solution after printing. More accurate drug deposition was obtained by PIJ as compared with flexography. More than 90% drug release was achieved within 5 min regardless of printing method used. The solubility of drug in solvents/cosolvents, rheological properties of formulations, properties of substrate, feasibility and accuracy of the printing methods, and detection limit of analytical techniques for characterization of printed dosage forms are some of the concerns that need to be addressed for development of printable dosage forms of poorly soluble drugs. © 2013 Wiley Periodicals, Inc. and the American Pharmacists Association.

Yield stress determines bioprintability of hydrogels based on gelatin-methacryloyl and gellan gum for cartilage bioprinting.

PubMed

Mouser, Vivian H M; Melchels, Ferry P W; Visser, Jetze; Dhert, Wouter J A; Gawlitta, Debby; Malda, Jos

2016-07-19

Bioprinting of chondrocyte-laden hydrogels facilitates the fabrication of constructs with controlled organization and shape e.g. for articular cartilage implants. Gelatin-methacryloyl (gelMA) supplemented with gellan gum is a promising bio-ink. However, the rheological properties governing the printing process, and the influence of gellan gum on the mechanical properties and chondrogenesis of the blend, are still unknown. Here, we investigated the suitability of gelMA/gellan for cartilage bioprinting. Multiple concentrations, ranging from 3% to 20% gelMA with 0%-1.5% gellan gum, were evaluated for their printability, defined as the ability to form filaments and to incorporate cells at 15 °C-37 °C. To support the printability assessment, yield stress and viscosity of the hydrogels were measured. Stiffness of UV-cured constructs, as well as cartilage-like tissue formation by embedded chondrocytes, were determined in vitro. A large range of gelMA/gellan concentrations were printable with inclusion of cells and formed the bioprinting window. The addition of gellan gum improved filament deposition by inducing yielding behavior, increased construct stiffness and supported chondrogenesis. High gellan gum concentrations, however, did compromise cartilage matrix production and distribution, and even higher concentrations resulted in too high yield stresses to allow cell encapsulation. This study demonstrates the high potential of gelMA/gellan blends for cartilage bioprinting and identifies yield stress as a dominant factor for bioprintability.

Fault tolerant system based on IDDQ testing

NASA Astrophysics Data System (ADS)

Guibane, Badi; Hamdi, Belgacem; Mtibaa, Abdellatif; Bensalem, Brahim

2018-06-01

Offline test is essential to ensure good manufacturing quality. However, for permanent or transient faults that occur during the use of the integrated circuit in an application, an online integrated test is needed as well. This procedure should ensure the detection and possibly the correction or the masking of these faults. This requirement of self-correction is sometimes necessary, especially in critical applications that require high security such as automotive, space or biomedical applications. We propose a fault-tolerant design for analogue and mixed-signal design complementary metal oxide (CMOS) circuits based on the quiescent current supply (IDDQ) testing. A defect can cause an increase in current consumption. IDDQ testing technique is based on the measurement of power supply current to distinguish between functional and failed circuits. The technique has been an effective testing method for detecting physical defects such as gate-oxide shorts, floating gates (open) and bridging defects in CMOS integrated circuits. An architecture called BICS (Built In Current Sensor) is used for monitoring the supply current (IDDQ) of the connected integrated circuit. If the measured current is not within the normal range, a defect is signalled and the system switches connection from the defective to a functional integrated circuit. The fault-tolerant technique is composed essentially by a double mirror built-in current sensor, allowing the detection of abnormal current consumption and blocks allowing the connection to redundant circuits, if a defect occurs. Spices simulations are performed to valid the proposed design.

Molecular dynamic simulation study of plasma etching L10 FePt media in embedded mask patterning (EMP) process

NASA Astrophysics Data System (ADS)

Zhu, Jianxin; Quarterman, P.; Wang, Jian-Ping

2017-05-01

Plasma etching process of single-crystal L10-FePt media [H. Wang et al., Appl. Phys. Lett. 102(5) (2013)] is studied using molecular dynamic simulation. Embedded-Atom Method [M. S. Daw and M. I. Baskes, Phy. Rev. B 29, 6443 (1984); X. W. Zhou, R. A. Johnson and H. N. G. Wadley, Phy. Rev. B 69, 144113 (2004)] is used to calculate the interatomic potential within atoms in FePt alloy, and ZBL potential [J.F. Ziegler, J. P. Biersack and U. Littmark, "The Stopping and Range of Ions in Matter," Volume 1, Pergamon,1985] in comparison with conventional Lennard-Jones "12-6" potential is applied to interactions between etching gas ions and metal atoms. It is shown the post-etch structure defects can include amorphized surface layer and lattice interstitial point defects that caused by etchant ions passed through the surface layer. We show that the amorphized or damaged FePt lattice surface layer (or "magnetic dead-layer") thickness after etching increases with ion energy for Ar ion impacts, but significantly small for He ions at up to 250eV ion energy. However, we showed that He sputtering creates more interstitial defects at lower energy levels and defects are deeper below the surface compared to Ar sputtering. We also calculate the interstitial defect level and depth as dependence on ion energy for both Ar and He ions. Media magnetic property loss due to these defects is also discussed.

Bed Bug Tips

EPA Pesticide Factsheets

How to deal with bed bugs in one printable page. Ten tips include ensuring correct insect identification, reducing clutter, understand integrated pest management, using mattress and box spring encasements, and heat treatment.

PATTERNS OF FUNDUS AUTOFLUORESCENCE DEFECTS IN NEOVASCULAR AGE-RELATED MACULAR DEGENERATION SUBTYPES.

PubMed

Ozkok, Ahmet; Sigford, Douglas K; Tezel, Tongalp H

2016-11-01

To test define characteristic fundus autofluorescence patterns of different exudative age-related macular degeneration subtypes. Cross-sectional study. Fifty-two patients with choroidal neovascularization because of three different neovascular age-related macular degeneration subtypes were included in the study. Macular and peripheral fundus autofluorescence patterns of study subjects were compared in a masked fashion. Fundus autofluorescence patterns of all three neovascular age-related macular degeneration subtypes revealed similar patterns. However, peripapillary hypo-autofluorescence was more common among patients with polypoidal choroidal vasculopathy (88.2%) compared with patients with retinal angiomatous proliferation (12.5%) and patients without retinal angiomatous proliferation and polypoidal choroidal vasculopathy (21.1%) (P < 0.0001). Presence of peripapillary fundus autofluorescence defects in neovascular age-related macular degeneration maybe suggestive of polypoidal choroidal vasculopathy as a variant of neovascular age-related macular degeneration.

Optimising low molecular weight hydrogels for automated 3D printing.

PubMed

Nolan, Michael C; Fuentes Caparrós, Ana M; Dietrich, Bart; Barrow, Michael; Cross, Emily R; Bleuel, Markus; King, Stephen M; Adams, Dave J

2017-11-22

Hydrogels prepared from low molecular weight gelators (LMWGs) are formed as a result of hierarchical intermolecular interactions between gelators to form fibres, and then further interactions between the self-assembled fibres via physical entanglements, as well as potential branching points. These interactions can allow hydrogels to recover quickly after a high shear rate has been applied. There are currently limited design rules describing which types of morphology or rheological properties are required for a LMWG hydrogel to be used as an effective, printable gel. By preparing hydrogels with different types of fibrous network structures, we have been able to understand in more detail the morphological type which gives rise to a 3D-printable hydrogel using a range of techniques, including rheology, small angle scattering and microscopy.

Genetics Home Reference: schizophrenia

MedlinePlus

... Share: Email Facebook Twitter Home Health Conditions Schizophrenia Schizophrenia Printable PDF Open All Close All Enable Javascript to view the expand/collapse boxes. Description Schizophrenia is a brain disorder classified as a psychosis, ...

Aerial imaging technology for photomask qualification: from a microscope to a metrology tool

NASA Astrophysics Data System (ADS)

Garetto, Anthony; Scherübl, Thomas; Peters, Jan Hendrik

2012-09-01

Photomasks carry the structured information of the chip designs printed with lithography scanners onto wafers. These structures, for the most modern technologies, are enlarged by a factor of 4 with respect to the final circuit design, and 20-60 of these photomasks are needed for the production of a single completed chip used, for example, in computers or cell phones. Lately, designs have been reported to be on the drawing board with close to 100 of these layers. Each of these photomasks will be reproduced onto the wafer several hundred times and typically 5000-50 000 wafers will be produced with each of them. Hence, the photomasks need to be absolutely defect-free to avoid any fatal electrical shortcut in the design or drastic performance degradation. One well-known method in the semiconductor industry is to analyze the aerial image of the photomask in a dedicated tool referred to as Aerial Imaging Measurement System, which emulates the behavior of the respective lithography scanner used for the imaging of the mask. High-end lithography scanners use light with a wavelength of 193 nm and high numerical apertures (NAs) of 1.35 utilizing a water film between the last lens and the resist to be illuminated (immersion scanners). Complex illumination shapes enable the imaging of structures well below the wavelength used. Future lithography scanners will work at a wavelength of 13.5 nm [extreme ultraviolet (EUV)] and require the optical system to work with mirrors in vacuum instead of the classical lenses used in current systems. The exact behavior of these systems is emulated by the Aerial Image Measurement System (AIMS™; a Trademark of Carl Zeiss). With these systems, any position of the photomask can be imaged under the same illumination condition used by the scanners, and hence, a prediction of the printing behavior of any structure can be derived. This system is used by mask manufacturers in their process flow to review critical defects or verify defect repair success. In this paper, we give a short introduction into the lithography roadmap driving the development cycles of the AIMS systems focusing primarily on the complexity of the structures to be reviewed. Second, we describe the basic principle of the AIMS technology and how it is used. The last section is dedicated to the development of the latest generation of the AIMS for EUV, which is cofinanced by several semiconductor companies in order to close a major gap in the mask manufacturing infrastructure and the challenges to be met.

Overlay degradation induced by film stress

NASA Astrophysics Data System (ADS)

Huang, Chi-hao; Liu, Yu-Lin; Luo, Shing-Ann; Yang, Mars; Yang, Elvis; Hung, Yung-Tai; Luoh, Tuung; Yang, T. H.; Chen, K. C.

2017-03-01

The semiconductor industry has continually sought the approaches to produce memory devices with increased memory cells per memory die. One way to meet the increasing storage capacity demand and reduce bit cost of NAND flash memories is 3D stacked flash cell array. In constructing 3D NAND flash memories, increasing the number of stacked layers to build more memory cell number per unit area necessitates many high-aspect-ratio etching processes accordingly the incorporation of thick and unique etching hard-mask scheme has been indispensable. However, the ever increasingly thick requirement on etching hard-mask has made the hard-mask film stress control extremely important for maintaining good process qualities. The residual film stress alters the wafer shape consequently several process impacts have been readily observed across wafer, such as wafer chucking error on scanner, film peeling, materials coating and baking defects, critical dimension (CD) non-uniformity and overlay degradation. This work investigates the overlay and residual order performance indicator (ROPI) degradation coupling with increasingly thick advanced patterning film (APF) etching hard-mask. Various APF films deposited by plasma enhanced chemical vapor deposition (PECVD) method under different deposition temperatures, chemicals combinations, radio frequency powers and chamber pressures were carried out. And -342MPa to +80MPa film stress with different film thicknesses were generated for the overlay performance study. The results revealed the overlay degradation doesn't directly correlate with convex or concave wafer shapes but the magnitude of residual APF film stress, while increasing the APF thickness will worsen the overlay performance and ROPI strongly. High-stress APF film was also observed to enhance the scanner chucking difference and lead to more serious wafer to wafer overlay variation. To reduce the overlay degradation from ever increasingly thick APF etching hard-mask, optimizing the film stress of APF is the most effective way and high order overlay compensation is also helpful.

Evidence That Masking of Synapsis Imperfections Counterbalances Quality Control to Promote Efficient Meiosis

PubMed Central

Mlynarczyk-Evans, Susanna; Roelens, Baptiste; Villeneuve, Anne M.

2013-01-01

Reduction in ploidy to generate haploid gametes during sexual reproduction is accomplished by the specialized cell division program of meiosis. Pairing between homologous chromosomes and assembly of the synaptonemal complex at their interface (synapsis) represent intermediate steps in the meiotic program that are essential to form crossover recombination-based linkages between homologs, which in turn enable segregation of the homologs to opposite poles at the meiosis I division. Here, we challenge the mechanisms of pairing and synapsis during C. elegans meiosis by disrupting the normal 1∶1 correspondence between homologs through karyotype manipulation. Using a combination of cytological tools, including S-phase labeling to specifically identify X chromosome territories in highly synchronous cohorts of nuclei and 3D rendering to visualize meiotic chromosome structures and organization, our analysis of trisomic (triplo-X) and polyploid meiosis provides insight into the principles governing pairing and synapsis and how the meiotic program is “wired” to maximize successful sexual reproduction. We show that chromosomes sort into homologous groups regardless of chromosome number, then preferentially achieve pairwise synapsis during a period of active chromosome mobilization. Further, comparisons of synapsis configurations in triplo-X germ cells that are proficient or defective for initiating recombination suggest a role for recombination in restricting chromosomal interactions to a pairwise state. Increased numbers of homologs prolong markers of the chromosome mobilization phase and/or boost germline apoptosis, consistent with triggering quality control mechanisms that promote resolution of synapsis problems and/or cull meiocytes containing synapsis defects. However, we also uncover evidence for the existence of mechanisms that “mask” defects, thus allowing resumption of prophase progression and survival of germ cells despite some asynapsis. We propose that coupling of saturable masking mechanisms with stringent quality controls maximizes meiotic success by making progression and survival dependent on achieving a level of synapsis sufficient for crossover formation without requiring perfect synapsis. PMID:24339786

3D Printed Vascular Networks Enhance Viability in High-Volume Perfusion Bioreactor.

PubMed

Ball, Owen; Nguyen, Bao-Ngoc B; Placone, Jesse K; Fisher, John P

2016-12-01

There is a significant clinical need for engineered bone graft substitutes that can quickly, effectively, and safely repair large segmental bone defects. One emerging field of interest involves the growth of engineered bone tissue in vitro within bioreactors, the most promising of which are perfusion bioreactors. Using bioreactor systems, tissue engineered bone constructs can be fabricated in vitro. However, these engineered constructs lack inherent vasculature and once implanted, quickly develop a necrotic core, where no nutrient exchange occurs. Here, we utilized COMSOL modeling to predict oxygen diffusion gradients throughout aggregated alginate constructs, which allowed for the computer-aided design of printable vascular networks, compatible with any large tissue engineered construct cultured in a perfusion bioreactor. We investigated the effect of 3D printed macroscale vascular networks with various porosities on the viability of human mesenchymal stem cells in vitro, using both gas-permeable, and non-gas permeable bioreactor growth chamber walls. Through the use of 3D printed vascular structures in conjunction with a tubular perfusion system bioreactor, cell viability was found to increase by as much as 50% in the core of these constructs, with in silico modeling predicting construct viability at steady state.

3D Printed Vascular Networks Enhance Viability in High-Volume Perfusion Bioreactor

PubMed Central

Ball, Owen; Nguyen, Bao-Ngoc B.; Placone, Jesse K.; Fisher, John P.

2016-01-01

There is a significant clinical need for engineered bone graft substitutes that can quickly, effectively, and safely repair large segmental bone defects. One emerging field of interest involves the growth of engineered bone tissue in vitro within bioreactors, the most promising of which are perfusion bioreactors. Using bioreactor systems, tissue engineered bone constructs can be fabricated in vitro. However, these engineered constructs lack inherent vasculature and once implanted, quickly develop a necrotic core, where no nutrient exchange occurs. Here, we utilized COMSOL modeling to predict oxygen diffusion gradients throughout aggregated alginate constructs, which allowed for the computer-aided design of printable vascular networks, compatible with any large tissue engineered construct cultured in a perfusion bioreactor. We investigated the effect of 3D printed macroscale vascular networks with various porosities on the viability of human mesenchymal stem cells in vitro, using both gas-permeable, and non-gas permeable bioreactor growth chamber walls. Through the use of 3D printed vascular structures in conjunction with a tubular perfusion system bioreactor, cell viability was found to increase by as much as 50% in the core of these constructs, with in silico modeling predicting construct viability at steady state. PMID:27272210

Genetics Home Reference: distal arthrogryposis type 1

MedlinePlus

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Genetics Home Reference: lymphangioleiomyomatosis

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... Genetics Share: Email Facebook Twitter Home Health Conditions LAM Lymphangioleiomyomatosis Printable PDF Open All Close All Enable ... to view the expand/collapse boxes. Description Lymphangioleiomyomatosis ( LAM ) is a condition that affects the lungs , the ...

Metal1 patterning study for random-logic applications with 193i, using calibrated OPC for litho and etch

NASA Astrophysics Data System (ADS)

Mailfert, Julien; Van de Kerkhove, Jeroen; De Bisschop, Peter; De Meyer, Kristin

2014-03-01

A Metal1-layer (M1) patterning study is conducted on 20nm node (N20) for random-logic applications. We quantified the printability performance on our test vehicle for N20, corresponding to Poly/M1 pitches of 90/64nm, and with a selected minimum M1 gap size of 70nm. The Metal1 layer is patterned with 193nm immersion lithography (193i) using Negative Tone Developer (NTD) resist, and a double-patterning Litho-Etch-Litho-Etch (LELE) process. Our study is based on Logic test blocks that we OPCed with a combination of calibrated models for litho and for etch. We report the Overlapping Process Window (OPW), based on a selection of test structures measured after-etch. We find that most of the OPW limiting structures are EOL (End-of-Line) configurations. Further analysis of these individual OPW limiters will reveal that they belong to different types, such as Resist 3D (R3D) and Mask 3D (M3D) sensitive structures, limiters related to OPC (Optical Proximity Corrections) options such as assist placement, or the choice of CD metrics and tolerances for calculation of the process windows itself. To guide this investigation, we will consider a `reference OPC' case to be compared with other solutions. In addition, rigorous simulations and OPC verifications will complete the after-etch measurements to help us to validate our experimental findings.

Genetics Home Reference: congenital hypothyroidism

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... Facebook Twitter Home Health Conditions Congenital hypothyroidism Congenital hypothyroidism Printable PDF Open All Close All Enable Javascript to view the expand/collapse boxes. Description Congenital hypothyroidism is a partial or complete loss of function ...

Genetics Home Reference: leukocyte adhesion deficiency type 1

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Genetics Home Reference: cap myopathy

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Genetics Home Reference: cyclic neutropenia

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Genetics Home Reference: clopidogrel resistance

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Genetics Home Reference: alpha thalassemia

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Genetics Home Reference: beta thalassemia

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Quantitative phase retrieval with arbitrary pupil and illumination

DOE PAGES

Claus, Rene A.; Naulleau, Patrick P.; Neureuther, Andrew R.; ...

2015-10-02

We present a general algorithm for combining measurements taken under various illumination and imaging conditions to quantitatively extract the amplitude and phase of an object wave. The algorithm uses the weak object transfer function, which incorporates arbitrary pupil functions and partially coherent illumination. The approach is extended beyond the weak object regime using an iterative algorithm. Finally, we demonstrate the method on measurements of Extreme Ultraviolet Lithography (EUV) multilayer mask defects taken in an EUV zone plate microscope with both a standard zone plate lens and a zone plate implementing Zernike phase contrast.

Studies of the Effects of Control Bandwidth and Dark-Hole Size on the HCIT Contrast Performance

NASA Technical Reports Server (NTRS)

Sidick, Erkin; Shaklan, Stuart; Balasubramanian, Kunjithapatha; Cady, Eric

2015-01-01

We have carried out both theoretical and experimental studies of the sensitivity of dark hole contrast to the control bandwidth and dark-hole dimensions in high-contrast broadband stellar coronagraphy. We have evaluated the performance of DM actuator solutions in the presence of occulting mask defects using one to five 2% -wide bands spanning a 10% bandpass. We have also investigated the dependence of the HCIT contrast performance on the size of dark -hole area including large dark holes formed at the Nyquist limit of the DM.

Studies of the effects of control bandwidth and dark-hole size on the HCIT contrast performance

NASA Astrophysics Data System (ADS)

Sidick, Erkin; Shaklan, Stuart; Balasubramanian, Kunjithapatham; Cady, Eric

2015-09-01

We have carried out both theoretical and experimental studies of the sensitivity of dark hole contrast to the control bandwidth and dark-hole dimensions in high-contrast broadband stellar coronagraphy. We have evaluated the performance of DM actuator solutions in the presence of occulting mask defects using one to five 2%-wide bands spanning a 10% bandpass. We have also investigated the dependence of the HCIT contrast performance on the size of dark-hole area including large dark holes formed at the Nyquist limit of the DM.

Ethmoidal sinus adenocarcinoma with orbital invasion.

PubMed

Koukoulomatis, P; Charakidas, A; Papakrivopoulos, A; Giotakis, I

2001-01-01

To report a rare case of massive ethmoidal adenocarcinoma with orbital invasion but minimal ophthalmic symptoms on presentation. Case report of a 69-year-old, otherwise healthy, retired carpenter who was referred for treatment of bilateral senile cataract. A relative afferent pupillary defect and sectorial disc atrophy on ophthalmic examination led to further investigation and identification of an extensive ethmoidal neoplasm with orbital invasion. An incisional biopsy was performed and histopathologic examination revealed an adenocarcinoma of low-grade malignancy. Ethmoidal adenocarcinomas with orbital involvement may occasionally be relatively asymptomatic and masked by coexisting ocular disease.

AcrySof Natural SN60AT versus AcrySof SA60AT intraocular lens in patients with color vision defects.

PubMed

Raj, Shetal M; Vasavada, Abhay R; Nanavaty, Mayank A

2005-12-01

To determine whether implantation of the AcrySof Natural intraocular lens (IOL) worsened the severity of existing color deficit in congenital partial red-green color deficient individuals (CPRG). A prospective controlled randomized double-masked analysis of 30 consecutive patients with CPRG defect and bilateral cataracts received a Natural IOL (test group) in 1 eye and a single-piece AcrySof IOL (control group) in the other eye. Patients were tested unilaterally to detect CPRG defect using Ishihara pseudoisochromatic plates and the Farnsworth D-15 test. Plates 1 to 21 measured the Ishihara error score; plates 22 to 25 indicated severity of defect based on clarity of both numerals as partial mild/moderate (both visible), partial severe defect (only 1 visible). The D-15 test is based on number of diametrical crossings on the circular diagram; severity is graded as mild (1 crossing), moderate (2 crossings), or severe (>2 crossings). Tests were performed before and after IOL implantation at 1, 3, and 6 months. At mean follow-up of 6.13 months +/- 1.2 (SD), analysis of variance test judged the difference in error scores and cross tabulation represented change in number of diametrical crossings. The mean age was 62.3 +/- 8.5 years. All patients were men. Before IOL implantation, all patients had moderate CPRG defect on both tests. The Ishihara error score in the test and control groups did not reveal statistically significant differences (P = .505 and P = .119, respectively). With D-15, none of the patients in the test or control group showed >2 crossings. The implantation of AcrySof Natural IOL did not worsen the preexisting severity of color defect in CPRG individuals.

Genetics Home Reference: breast cancer

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Genetics Home Reference: uncombable hair syndrome

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Genetics Home Reference: cartilage-hair hypoplasia

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... Twitter Home Health Conditions Cartilage-hair hypoplasia Cartilage-hair hypoplasia Printable PDF Open All Close All Enable ... to view the expand/collapse boxes. Description Cartilage-hair hypoplasia is a disorder of bone growth characterized ...

Genetics Home Reference: juvenile myoclonic epilepsy

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... Home Health Conditions Juvenile myoclonic epilepsy Juvenile myoclonic epilepsy Printable PDF Open All Close All Enable Javascript ... view the expand/collapse boxes. Description Juvenile myoclonic epilepsy is a condition characterized by recurrent seizures (epilepsy). ...

Genetics Home Reference: pyridoxine-dependent epilepsy

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Genetics Home Reference: early infantile epileptic encephalopathy 1

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Genetics Home Reference: Bartter syndrome

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Genetics Home Reference: Parkinson disease

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Genetics Home Reference: keratoconus

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Genetics Home Reference: retinitis pigmentosa

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Genetics Home Reference: sporadic hemiplegic migraine

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Genetics Home Reference: familial hemiplegic migraine

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Genetics Home Reference: chronic myeloid leukemia

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Genetics Home Reference: arrhythmogenic right ventricular cardiomyopathy

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Genetics Home Reference: isolated Duane retraction syndrome

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Chronic Obstructive Pulmonary Disease (COPD): Data and Statistics

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... Statistics Recommend on Facebook Tweet Share Compartir COPD Death Rates in the United States Printable Version [PDF 202KB] Although age-adjusted death rates for COPD declined among US men from 1999 ( ...

Genetics Home Reference: Leydig cell hypoplasia

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Genetics Home Reference: Cole disease

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Genetics Home Reference: cold-induced sweating syndrome

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Genetics Home Reference: congenital hepatic fibrosis

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Genetics Home Reference: systemic lupus erythematosus

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Genetics Home Reference: white sponge nevus

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Genetics Home Reference: Turner syndrome

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Genetics Home Reference: sialic acid storage disease

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Picture Me Safe

ERIC Educational Resources Information Center

Irvin, Daniel W.

1977-01-01

The validity of well-written articles can be destroyed by poor illustration, especially when the pictures show unsafe practices. The responsibility lies with the author to provide clear printable pictures showing safe working environments and safe practices. (Editor)

Genetics Home Reference: potassium-aggravated myotonia

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... Facebook Twitter Home Health Conditions Potassium-aggravated myotonia Potassium-aggravated myotonia Printable PDF Open All Close All ... Javascript to view the expand/collapse boxes. Description Potassium-aggravated myotonia is a disorder that affects muscles ...

Genetics Home Reference: pulmonary arterial hypertension

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... Home Health Conditions Pulmonary arterial hypertension Pulmonary arterial hypertension Printable PDF Open All Close All Enable Javascript ... view the expand/collapse boxes. Description Pulmonary arterial hypertension is a progressive disorder characterized by abnormally high ...

Genetics Home Reference: central core disease

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Genetics Home Reference: Peters plus syndrome

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Genetics Home Reference: myostatin-related muscle hypertrophy

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... Conditions Myostatin-related muscle hypertrophy Myostatin-related muscle hypertrophy Printable PDF Open All Close All Enable Javascript ... the expand/collapse boxes. Description Myostatin-related muscle hypertrophy is a rare condition characterized by reduced body ...

Genetics Home Reference: Dubin-Johnson syndrome

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Genetics Home Reference: brain-lung-thyroid syndrome

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... Twitter Home Health Conditions Brain-lung-thyroid syndrome Brain-lung-thyroid syndrome Printable PDF Open All Close ... Javascript to view the expand/collapse boxes. Description Brain-lung-thyroid syndrome is a group of conditions ...

Genetics Home Reference: Smith-Lemli-Opitz syndrome

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... Twitter Home Health Conditions Smith-Lemli-Opitz syndrome Smith-Lemli-Opitz syndrome Printable PDF Open All Close ... Javascript to view the expand/collapse boxes. Description Smith-Lemli-Opitz syndrome is a developmental disorder that ...

Genetics Home Reference: rheumatoid arthritis

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... Email Facebook Twitter Home Health Conditions Rheumatoid arthritis Rheumatoid arthritis Printable PDF Open All Close All Enable Javascript to view the expand/collapse boxes. Description Rheumatoid arthritis is a disease that causes chronic abnormal inflammation, ...

Genetics Home Reference: factor V deficiency

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... Twitter Home Health Conditions Factor V deficiency Factor V deficiency Printable PDF Open All Close All Enable ... to view the expand/collapse boxes. Description Factor V deficiency is a rare bleeding disorder. The signs ...

Genetics Home Reference: protein C deficiency

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Genetics Home Reference: X-linked dilated cardiomyopathy

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Genetics Home Reference: X-linked thrombocytopenia

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Genetics Home Reference: X-linked myotubular myopathy

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Genetics Home Reference: triple X syndrome

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Genetics Home Reference: factor X deficiency

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Genetics Home Reference: X-linked sideroblastic anemia

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DOE Office of Scientific and Technical Information (OSTI.GOV)

Kunc, Vlastimil; Lindahl, John M.; Minneci, Robert P.

ORNL worked with The DOW Chemical Company to validate the feasibility of 3D printing DOW’s polyurethane (PU) materials using ORNL’s equipment and know-how. This led to the development of the first directly-3D-printable PU material.

Genetics Home Reference: Kaufman oculocerebrofacial syndrome

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Genetics Home Reference: Russell-Silver syndrome

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Pattern transfer printing by kinetic control of adhesion to an elastomeric stamp

DOEpatents

Nuzzo, Ralph G [Champaign, IL; Rogers, John A [Champaign, IL; Menard, Etienne [Urbana, IL; Lee, Keon Jae [Tokyo, JP; Khang, Dahl-Young [Urbana, IL; Sun, Yugang [Champaign, IL; Meitl, Matthew [Champaign, IL; Zhu, Zhengtao [Urbana, IL

2011-05-17

The present invention provides methods, systems and system components for transferring, assembling and integrating features and arrays of features having selected nanosized and/or microsized physical dimensions, shapes and spatial orientations. Methods of the present invention utilize principles of `soft adhesion` to guide the transfer, assembly and/or integration of features, such as printable semiconductor elements or other components of electronic devices. Methods of the present invention are useful for transferring features from a donor substrate to the transfer surface of an elastomeric transfer device and, optionally, from the transfer surface of an elastomeric transfer device to the receiving surface of a receiving substrate. The present methods and systems provide highly efficient, registered transfer of features and arrays of features, such as printable semiconductor element, in a concerted manner that maintains the relative spatial orientations of transferred features.

Cold Oxygen Plasma Treatments for the Improvement of the Physicochemical and Biodegradable Properties of Polylactic Acid Films for Food Packaging.

PubMed

Song, Ah Young; Oh, Yoon Ah; Roh, Si Hyeon; Kim, Ji Hyeon; Min, Sea C

2016-01-01

The effects of cold plasma (CP) treatment on the physicochemical and biodegradable properties of polylactic acid (PLA) films were studied. The PLA films were exposed to CP for 40 min at 900 W and 667 Pa using oxygen as the plasma-forming gas. The tensile, optical, and dynamic mechanical thermal properties, surface morphology, printability, water contact angle, chemical structure, weight change, and biodegradability properties of the films were evaluated during storage for up to 56 d. The tensile and optical properties of the PLA films were not significantly affected by CP treatment (CPT; P > 0.05). The surface roughness and water contact angle of PLA films increased by CPT and further increased during storage for 56 d. The printability of the PLA films increased following CPT and remained stable throughout the storage period. CP-induced hydrophilicity was also sustained during the storage period. The PLA films lost 1.9% of their weight after CPT, but recovered 99.5% of this loss after 14 d in storage. Photodegradation, thermal, and microbial biodegradable properties of the films were significantly improved by CPT (P < 0.05). Accelerated biodegradation of CP-treated PLA sachets with and without cheese was observed in compost. These results demonstrate the potential of CPT for modifying the stiffness, water contact angle, and chemical structure of PLA films and improving the printability and biodegradability of the films for food packaging. © 2015 Institute of Food Technologists®

Characterization of printable cellular micro-fluidic channels for tissue engineering.

PubMed

Zhang, Yahui; Yu, Yin; Chen, Howard; Ozbolat, Ibrahim T

2013-06-01

Tissue engineering has been a promising field of research, offering hope of bridging the gap between organ shortage and transplantation needs. However, building three-dimensional (3D) vascularized organs remains the main technological barrier to be overcome. One of the major challenges is the inclusion of a vascular network to support cell viability in terms of nutrients and oxygen perfusion. This paper introduces a new approach to the fabrication of vessel-like microfluidic channels that has the potential to be used in thick tissue or organ fabrication in the future. In this research, we investigate the manufacturability of printable micro-fluidic channels, where micro-fluidic channels support mechanical integrity as well as enable fluid transport in 3D. A pressure-assisted solid freeform fabrication platform is developed with a coaxial needle dispenser unit to print hollow hydrogel filaments. The dispensing rheology is studied, and effects of material properties on structural formation of hollow filaments are analyzed. Sample structures are printed through the developed computer-controlled system. In addition, cell viability and gene expression studies are presented in this paper. Cell viability shows that cartilage progenitor cells (CPCs) maintained their viability right after bioprinting and during prolonged in vitro culture. Real-time PCR analysis yielded a relatively higher expression of cartilage-specific genes in alginate hollow filament encapsulating CPCs, compared with monolayer cultured CPCs, which revealed that printable semi-permeable micro-fluidic channels provided an ideal environment for cell growth and function.

Graphene-Decorated Nanocomposites for Printable Electrodes in Thin Wafer Devices

NASA Astrophysics Data System (ADS)

Bakhshizadeh, N.; Sivoththaman, S.

2017-12-01

Printable electrodes that induce less stress and require lower curing temperatures compared to traditional screen-printed metal pastes are needed in thin wafer devices such as future solar cells, and in flexible electronics. The synthesis of nanocomposites by incorporating graphene nanopowders as well as silver nanowires into epoxy-based electrically conductive adhesives (ECA) is examined to improve electrical conductivity and to develop alternate printable electrode materials that induce less stress on the wafer. For the synthesized graphene and Ag nanowire-decorated ECA nanocomposites, the curing kinetics were studied by dynamic and isothermal differential scanning calorimetry measurements. Thermogravimetric analysis on ECA, ECA-AG and ECA/graphene nanopowder nanocomposites showed that the temperatures for onset of decomposition are higher than their corresponding glass transition temperature ( T g) indicating an excellent thermal resistance. Printed ECA/Ag nanowire nanocomposites showed 90% higher electrical conductivity than ECA films, whereas the ECA/graphene nanocomposites increased the conductivity by over two orders of magnitude. Scanning electron microscopy results also revealed the effect of fillers morphology on the conductivity improvement and current transfer mechanisms in nanocomposites. Residual stress analysis performed on Si wafers showed that the ECA and nanocomposite printed wafers are subjected to much lower stress compared to those printed with metallic pastes. The observed parameters of low curing temperature, good thermal resistance, reasonably high conductivity, and low residual stress in the ECA/graphene nanocomposite makes this material a promising alternative in screen-printed electrode formation in thin substrates.

Characterization of Printable Cellular Micro-fluidic Channels for Tissue Engineering

PubMed Central

Zhang, Yahui; Yu, Yin; Chen, Howard; Ozbolat, Ibrahim T.

2014-01-01

Tissue engineering has been a promising field of research, offering hope of bridging the gap between organ shortage and transplantation needs. However, building three-dimensional (3D) vascularized organs remains the main technological barrier to be overcome. One of the major challenges is the inclusion of a vascular network to support cell viability in terms of nutrients and oxygen perfusion. This paper introduces a new approach to fabrication of vessel-like microfluidic channels that has the potential to be used in thick tissue or organ fabrication in the future. In this research, we investigate the manufacturability of printable micro-fluidic channels, where micro-fluidic channels support mechanical integrity as well as enable fluid transport in 3D. A pressure-assisted solid freeform fabrication platform is developed with a coaxial needle dispenser unit to print hollow hydrogel filaments. The dispensing rheology is studied, and effects of material properties on structural formation of hollow filaments are analyzed. Sample structures are printed through the developed computer-controlled system. In addition, cell viability and gene expression studies are presented in this paper. Cell viability shows that cartilage progenitor cells (CPCs) maintained their viability right after bioprinting and during prolonged in vitro culture. Real-time PCR analysis yielded relatively higher expression of cartilage-specific genes in alginate hollow filament encapsulating CPCs, compared with monolayer cultured CPCs, which revealed that printable semi-permeable micro-fluidic channels provided an ideal environment for cell growth and function. PMID:23458889

Optimizing Compliance and Thermal Conductivity of Plasma Sprayed Thermal Barrier Coatings via Controlled Powders and Processing Strategies

NASA Astrophysics Data System (ADS)

Tan, Yang; Srinivasan, Vasudevan; Nakamura, Toshio; Sampath, Sanjay; Bertrand, Pierre; Bertrand, Ghislaine

2012-09-01

The properties and performance of plasma-sprayed thermal barrier coatings (TBCs) are strongly dependent on the microstructural defects, which are affected by starting powder morphology and processing conditions. Of particular interest is the use of hollow powders which not only allow for efficient melting of zirconia ceramics but also produce lower conductivity and more compliant coatings. Typical industrial hollow spray powders have an assortment of densities resulting in masking potential advantages of the hollow morphology. In this study, we have conducted process mapping strategies using a novel uniform shell thickness hollow powder to control the defect microstructure and properties. Correlations among coating properties, microstructure, and processing reveal feasibility to produce highly compliant and low conductivity TBC through a combination of optimized feedstock and processing conditions. The results are presented through the framework of process maps establishing correlations among process, microstructure, and properties and providing opportunities for optimization of TBCs.

A novel methodology for litho-to-etch pattern fidelity correction for SADP process

NASA Astrophysics Data System (ADS)

Chen, Shr-Jia; Chang, Yu-Cheng; Lin, Arthur; Chang, Yi-Shiang; Lin, Chia-Chi; Lai, Jun-Cheng

2017-03-01

For 2x nm node semiconductor devices and beyond, more aggressive resolution enhancement techniques (RETs) such as source-mask co-optimization (SMO), litho-etch-litho-etch (LELE) and self-aligned double patterning (SADP) are utilized for the low k1 factor lithography processes. In the SADP process, the pattern fidelity is extremely critical since a slight photoresist (PR) top-loss or profile roughness may impact the later core trim process, due to its sensitivity to environment. During the subsequent sidewall formation and core removal processes, the core trim profile weakness may worsen and induces serious defects that affect the final electrical performance. To predict PR top-loss, a rigorous lithography simulation can provide a reference to modify mask layouts; but it takes a much longer run time and is not capable of full-field mask data preparation. In this paper, we first brought out an algorithm which utilizes multi-intensity levels from conventional aerial image simulation to assess the physical profile through lithography to core trim etching steps. Subsequently, a novel correction method was utilized to improve the post-etch pattern fidelity without the litho. process window suffering. The results not only matched PR top-loss in rigorous lithography simulation, but also agreed with post-etch wafer data. Furthermore, this methodology can also be incorporated with OPC and post-OPC verification to improve core trim profile and final pattern fidelity at an early stage.

Comparison of fabrication methods for microstructured deep UV multimode waveguides based on fused silica

NASA Astrophysics Data System (ADS)

Elmlinger, Philipp; Schreivogel, Martin; Schmid, Marc; Kaiser, Myriam; Priester, Roman; Sonström, Patrick; Kneissl, Michael

2016-04-01

The suitability of materials for deep ultraviolet (DUV) waveguides concerning transmittance, fabrication, and coupling properties is investigated and a fused silica core/ambient air cladding waveguide system is presented. This high refractive index contrast system has far better coupling efficiency especially for divergent light sources like LEDs and also a significantly smaller critical bending radius compared to conventional waveguide systems, as simulated by ray-tracing simulations. For the fabrication of 300-ffm-thick multimode waveguides a hydrouoric (HF) acid based wet etch process is compared to selective laser etching (SLE). In order to fabricate thick waveguides out of 300-ffm-thick silica wafers by HF etching, two masking materials, LPCVD silicon nitride and LPCVD poly silicon, are investigated. Due to thermal stress, the silicon nitride deposited wafers show cracks and even break. Using poly silicon as a masking material, no cracks are observed and deep etching in 50 wt% HF acid up to 180 min is performed. While the masked and unmasked silica surface is almost unchanged in terms of roughness, notching defects occur at the remaining polysilicon edge leading to jagged sidewalls. Using SLE, waveguides with high contour accuracy are fabricated and the DUV guiding properties are successfully demonstrated with propagation losses between 0.6 and 0:8 dB=mm. These values are currently limited by sidewall scattering losses.

Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance via Serpentine Channel Patterned Mask.

PubMed

Ji, Qingbin; Li, Lei; Zhang, Wei; Wang, Jia; Liu, Peichi; Xie, Yahong; Yan, Tongxing; Yang, Wei; Chen, Weihua; Hu, Xiaodong

2016-08-24

The existence of high threading dislocation density (TDD) in GaN-based epilayers is a long unsolved problem, which hinders further applications of defect-sensitive GaN-based devices. Multiple-modulation of epitaxial lateral overgrowth (ELOG) is used to achieve high-quality GaN template on a novel serpentine channel patterned sapphire substrate (SCPSS). The dislocation blocking brought by the serpentine channel patterned mask, coupled with repeated dislocation bending, can reduce the dislocation density to a yet-to-be-optimized level of ∼2 × 10(5) to 2 × 10(6) cm(-2). About 80% area utilization rate of GaN with low TDD and stress relaxation is obtained. The periodical variations of dislocation density, optical properties and residual stress in GaN-based epilayers on SCPSS are analyzed. The quantum efficiency of InGaN/GaN multiple quantum wells (MQWs) on it can be increased by 52% compared with the conventional sapphire substrate. The reduced nonradiative recombination centers, the enhanced carrier localization, and the suppressed quantum confined Stark effect, are the main determinants of improved luminous performance in MQWs on SCPSS. This developed ELOG on serpentine shaped mask needs no interruption and regrowth, which can be a promising candidate for the heteroepitaxy of semipolar/nonpolar GaN and GaAs with high quality.

Genetics Home Reference: spinocerebellar ataxia type 6

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... Twitter Home Health Conditions SCA6 Spinocerebellar ataxia type 6 Printable PDF Open All Close All Enable Javascript ... the expand/collapse boxes. Description Spinocerebellar ataxia type 6 ( SCA6 ) is a condition characterized by progressive problems ...

Printable Version of Mold Remediation in Schools and Commercial Buildings

EPA Pesticide Factsheets

This document presents guidelines for the remediation/cleanup of mold and moisture problems in schools and commercial buildings; these guidelines include measures designed to protect the health of building occupants and remediators.

Genetics Home Reference: inherited thyroxine-binding globulin deficiency

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... Health Conditions Inherited thyroxine-binding globulin deficiency Inherited thyroxine-binding globulin deficiency Printable PDF Open All Close ... to view the expand/collapse boxes. Description Inherited thyroxine-binding globulin deficiency is a genetic condition that ...

Genetics Home Reference: thiamine-responsive megaloblastic anemia syndrome

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... Thiamine-responsive megaloblastic anemia syndrome Thiamine-responsive megaloblastic anemia syndrome Printable PDF Open All Close All Enable ... the expand/collapse boxes. Description Thiamine-responsive megaloblastic anemia syndrome is a rare condition characterized by hearing ...

Genetics Home Reference: familial male-limited precocious puberty

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... male-limited precocious puberty Familial male-limited precocious puberty Printable PDF Open All Close All Enable Javascript ... expand/collapse boxes. Description Familial male-limited precocious puberty is a condition that causes early sexual development ...

Genetics Home Reference: PDGFRB-associated chronic eosinophilic leukemia

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... associated chronic eosinophilic leukemia PDGFRB-associated chronic eosinophilic leukemia Printable PDF Open All Close All Enable Javascript ... expand/collapse boxes. Description PDGFRB -associated chronic eosinophilic leukemia is a type of cancer of blood-forming ...

Genetics Home Reference: factor VII deficiency

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... Facebook Twitter Home Health Conditions Factor VII deficiency Factor VII deficiency Printable PDF Open All Close All Enable Javascript to view the expand/collapse boxes. Description Factor VII deficiency is a rare bleeding disorder that varies ...

Genetics Home Reference: glycogen storage disease type V

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... Health Conditions Glycogen storage disease type V Glycogen storage disease type V Printable PDF Open All Close ... to view the expand/collapse boxes. Description Glycogen storage disease type V (also known as GSDV or ...

Genetics Home Reference: familial encephalopathy with neuroserpin inclusion bodies

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... Home Health Conditions FENIB Familial encephalopathy with neuroserpin inclusion bodies Printable PDF Open All Close All Enable ... expand/collapse boxes. Description Familial encephalopathy with neuroserpin inclusion bodies ( FENIB ) is a disorder that causes progressive ...

Genetics Home Reference: glycogen storage disease type IX

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Genetics Home Reference: hereditary myopathy with early respiratory failure

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... Home Health Conditions HMERF Hereditary myopathy with early respiratory failure Printable PDF Open All Close All Enable ... expand/collapse boxes. Description Hereditary myopathy with early respiratory failure ( HMERF ) is an inherited muscle disease that ...

Genetics Home Reference: Stevens-Johnson syndrome/toxic epidermal necrolysis

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... Conditions Stevens-Johnson syndrome/toxic epidermal necrolysis Stevens-Johnson syndrome/toxic epidermal necrolysis Printable PDF Open All ... to view the expand/collapse boxes. Description Stevens-Johnson syndrome/toxic epidermal necrolysis (SJS/TEN) is a ...

Genetics Home Reference: distal hereditary motor neuropathy, type II

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... hereditary motor neuropathy, type II Distal hereditary motor neuropathy, type II Printable PDF Open All Close All ... the expand/collapse boxes. Description Distal hereditary motor neuropathy, type II is a progressive disorder that affects ...

Genetics Home Reference: X-linked severe combined immunodeficiency

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... Facebook Twitter Home Health Conditions X-linked SCID X-linked severe combined immunodeficiency Printable PDF Open All ... Javascript to view the expand/collapse boxes. Description X-linked severe combined immunodeficiency (SCID) is an inherited ...

Genetics Home Reference: X-linked adrenal hypoplasia congenita

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Genetics Home Reference: X-linked congenital stationary night blindness

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Genetics Home Reference: X-linked lissencephaly with abnormal genitalia

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Genetics Home Reference: X-linked sideroblastic anemia and ataxia

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... Health Conditions X-linked sideroblastic anemia and ataxia X-linked sideroblastic anemia and ataxia Printable PDF Open ... Javascript to view the expand/collapse boxes. Description X-linked sideroblastic anemia and ataxia is a rare ...

Genetics Home Reference: X-linked chondrodysplasia punctata 1

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... Home Health Conditions X-linked chondrodysplasia punctata 1 X-linked chondrodysplasia punctata 1 Printable PDF Open All ... Javascript to view the expand/collapse boxes. Description X-linked chondrodysplasia punctata 1 is a disorder of ...

Genetics Home Reference: X-linked intellectual disability, Siderius type

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Field results from a new die-to-database reticle inspection platform

NASA Astrophysics Data System (ADS)

Broadbent, William; Yokoyama, Ichiro; Yu, Paul; Seki, Kazunori; Nomura, Ryohei; Schmalfuss, Heiko; Heumann, Jan; Sier, Jean-Paul

2007-05-01

A new die-to-database high-resolution reticle defect inspection platform, TeraScanHR, has been developed for advanced production use with the 45nm logic node, and extendable for development use with the 32nm node (also the comparable memory nodes). These nodes will use predominantly ArF immersion lithography although EUV may also be used. According to recent surveys, the predominant reticle types for the 45nm node are 6% simple tri-tone and COG. Other advanced reticle types may also be used for these nodes including: dark field alternating, Mask Enhancer, complex tri-tone, high transmission, CPL, etc. Finally, aggressive model based OPC will typically be used which will include many small structures such as jogs, serifs, and SRAF (sub-resolution assist features) with accompanying very small gaps between adjacent structures. The current generation of inspection systems is inadequate to meet these requirements. The architecture and performance of the new TeraScanHR reticle inspection platform is described. This new platform is designed to inspect the aforementioned reticle types in die-to-database and die-to-die modes using both transmitted and reflected illumination. Recent results from field testing at two of the three beta sites are shown (Toppan Printing in Japan and the Advanced Mask Technology Center in Germany). The results include applicable programmed defect test reticles and advanced 45nm product reticles (also comparable memory reticles). The results show high sensitivity and low false detections being achieved. The platform can also be configured for the current 65nm, 90nm, and 130nm nodes.

Genetics Home Reference: tumor necrosis factor receptor-associated periodic syndrome

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... Email Facebook Twitter Home Health Conditions TRAPS Tumor necrosis factor receptor-associated periodic syndrome Printable PDF Open ... to view the expand/collapse boxes. Description Tumor necrosis factor receptor-associated periodic syndrome (commonly known as ...

Genetics Home Reference: STXBP1 encephalopathy with epilepsy

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... Conditions STXBP1 encephalopathy with epilepsy STXBP1 encephalopathy with epilepsy Printable PDF Open All Close All Enable Javascript ... the expand/collapse boxes. Description STXBP1 encephalopathy with epilepsy is a condition characterized by recurrent seizures (epilepsy), ...

Genetics Home Reference: spinal muscular atrophy with progressive myoclonic epilepsy

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... myoclonic epilepsy Spinal muscular atrophy with progressive myoclonic epilepsy Printable PDF Open All Close All Enable Javascript ... boxes. Description Spinal muscular atrophy with progressive myoclonic epilepsy (SMA-PME) is a neurological condition that causes ...

Genetics Home Reference: autosomal dominant partial epilepsy with auditory features

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... Twitter Home Health Conditions ADPEAF Autosomal dominant partial epilepsy with auditory features Printable PDF Open All Close ... the expand/collapse boxes. Description Autosomal dominant partial epilepsy with auditory features ( ADPEAF ) is an uncommon form ...

Genetics Home Reference: Senior-Løken syndrome

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... Facebook Twitter Home Health Conditions Senior-Løken syndrome Senior-Løken syndrome Printable PDF Open All Close All ... Javascript to view the expand/collapse boxes. Description Senior-Løken syndrome is a rare disorder characterized by ...

Genetics Home Reference: 46,XX testicular disorder of sex development

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... of sex development 46,XX testicular disorder of sex development Printable PDF Open All Close All Enable ... collapse boxes. Description 46,XX testicular disorder of sex development is a condition in which individuals with ...

Genetics Home Reference: neuropathy, ataxia, and retinitis pigmentosa

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... Twitter Home Health Conditions NARP Neuropathy, ataxia, and retinitis pigmentosa Printable PDF Open All Close All Enable Javascript ... the expand/collapse boxes. Description Neuropathy, ataxia, and retinitis pigmentosa ( NARP ) is a condition that causes a variety ...

Genetics Home Reference: hereditary leiomyomatosis and renal cell cancer

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... Home Health Conditions HLRCC Hereditary leiomyomatosis and renal cell cancer Printable PDF Open All Close All Enable Javascript ... expand/collapse boxes. Description Hereditary leiomyomatosis and renal cell cancer ( HLRCC ) is a disorder in which affected individuals ...

Genetics Home Reference: nephrogenic diabetes insipidus

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... Nephrogenic diabetes insipidus Nephrogenic diabetes insipidus Printable PDF Open All Close All Enable Javascript to view the expand/collapse boxes. Description Nephrogenic diabetes insipidus is a disorder of water balance. The body normally balances fluid intake with the ...

Genetics Home Reference: alpha thalassemia X-linked intellectual disability syndrome

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... thalassemia X-linked intellectual disability syndrome Alpha thalassemia X-linked intellectual disability syndrome Printable PDF Open All ... view the expand/collapse boxes. Description Alpha thalassemia X-linked intellectual disability syndrome is an inherited disorder ...

Genetics Home Reference: immune dysregulation, polyendocrinopathy, enteropathy, X-linked syndrome

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... Health Conditions IPEX syndrome Immune dysregulation, polyendocrinopathy, enteropathy, X-linked syndrome Printable PDF Open All Close All ... expand/collapse boxes. Description Immune dysregulation, polyendocrinopathy, enteropathy, X-linked (IPEX) syndrome primarily affects males and is ...

3D Printable Graphene Composite

NASA Astrophysics Data System (ADS)

Wei, Xiaojun; Li, Dong; Jiang, Wei; Gu, Zheming; Wang, Xiaojuan; Zhang, Zengxing; Sun, Zhengzong

2015-07-01

In human being’s history, both the Iron Age and Silicon Age thrived after a matured massive processing technology was developed. Graphene is the most recent superior material which could potentially initialize another new material Age. However, while being exploited to its full extent, conventional processing methods fail to provide a link to today’s personalization tide. New technology should be ushered in. Three-dimensional (3D) printing fills the missing linkage between graphene materials and the digital mainstream. Their alliance could generate additional stream to push the graphene revolution into a new phase. Here we demonstrate for the first time, a graphene composite, with a graphene loading up to 5.6 wt%, can be 3D printable into computer-designed models. The composite’s linear thermal coefficient is below 75 ppm·°C-1 from room temperature to its glass transition temperature (Tg), which is crucial to build minute thermal stress during the printing process.

A printable color filter based on the micro-cavity incorporating a nano-grating

NASA Astrophysics Data System (ADS)

Ye, Yan; Xu, Fengchuan; Wu, Shangliang; Wan, Wenqiang; Huang, Wenbin; Liu, Yanhua; Pu, Donglin; Wei, Guojun; Zhou, Yun; Wang, Yanyan; Qiao, Wen; Xu, Yishen; Chen, Linsen

2016-10-01

A printable color filter based on the photonic micro-cavity incorporating a nanostructure is proposed, which consists of a nano-metallic grating, a dielectric layer and aluminum (Al) film. According to the resonance induced by different dielectric depths of the micro-cavity, two dielectric heights for the same resonant wavelength are chosen to form the grating heights relative to the Al film. With the contribution of the cavity resonance and the surface plasmon resonance, the proposed structure performs enhanced broadband filtering characteristics with good angular tolerance up to 48° compared to the one of the micro-cavity as well as the one of the metallic grating. Therefore, reflective filters for RGB colors are designed incorporating the proposed structure. Furthermore, for the proposed structure shows great polarization dependence even at normal incidence, it can also be utilized as an anticounterfeiting certificate.

Three dimensional ink-jet printing of biomaterials using ionic liquids and co-solvents.

PubMed

Gunasekera, Deshani H A T; Kuek, SzeLee; Hasanaj, Denis; He, Yinfeng; Tuck, Christopher; Croft, Anna K; Wildman, Ricky D

2016-08-15

1-Ethyl-3-methylimidazolium acetate ([C2C1Im][OAc]) and 1-butyl-3-methylimidazolium acetate ([C4C1Im][OAc]) have been used as solvents for the dissolution and ink-jet printing of cellulose from 1.0 to 4.8 wt%, mixed with the co-solvents 1-butanol and DMSO. 1-Butanol and DMSO were used as rheological modifiers to ensure consistent printing, with DMSO in the range of 41-47 wt% producing samples within the printable range of a DIMATIX print-head used (printability parameter < 10) at 55 °C, whilst maintaining cellulose solubility. Regeneration of cellulose from printed samples using water was demonstrated, with the resulting structural changes to the cellulose sample assessed by scanning electron microscopy (SEM) and white light interferometry (WLI). These results indicate the potential of biorenewable materials to be used in the 3D additive manufacture process to generate single-component and composite materials.

Identification of Novel "Inks" for 3D Printing Using High-Throughput Screening: Bioresorbable Photocurable Polymers for Controlled Drug Delivery.

PubMed

Louzao, Iria; Koch, Britta; Taresco, Vincenzo; Ruiz-Cantu, Laura; Irvine, Derek J; Roberts, Clive J; Tuck, Christopher; Alexander, Cameron; Hague, Richard; Wildman, Ricky; Alexander, Morgan R

2018-02-28

A robust methodology is presented to identify novel biomaterials suitable for three-dimensional (3D) printing. Currently, the application of additive manufacturing is limited by the availability of functional inks, especially in the area of biomaterials; this is the first time when this method is used to tackle this problem, allowing hundreds of formulations to be readily assessed. Several functional properties, including the release of an antidepressive drug (paroxetine), cytotoxicity, and printability, are screened for 253 new ink formulations in a high-throughput format as well as mechanical properties. The selected candidates with the desirable properties are successfully scaled up using 3D printing into a range of object architectures. A full drug release study and degradability and tensile modulus experiments are presented on a simple architecture to validating the suitability of this methodology to identify printable inks for 3D printing devices with bespoke properties.

Printable elastic conductors with a high conductivity for electronic textile applications

PubMed Central

Matsuhisa, Naoji; Kaltenbrunner, Martin; Yokota, Tomoyuki; Jinno, Hiroaki; Kuribara, Kazunori; Sekitani, Tsuyoshi; Someya, Takao

2015-01-01

The development of advanced flexible large-area electronics such as flexible displays and sensors will thrive on engineered functional ink formulations for printed electronics where the spontaneous arrangement of molecules aids the printing processes. Here we report a printable elastic conductor with a high initial conductivity of 738 S cm−1 and a record high conductivity of 182 S cm−1 when stretched to 215% strain. The elastic conductor ink is comprised of Ag flakes, a fluorine rubber and a fluorine surfactant. The fluorine surfactant constitutes a key component which directs the formation of surface-localized conductive networks in the printed elastic conductor, leading to a high conductivity and stretchability. We demonstrate the feasibility of our inks by fabricating a stretchable organic transistor active matrix on a rubbery stretchability-gradient substrate with unimpaired functionality when stretched to 110%, and a wearable electromyogram sensor printed onto a textile garment. PMID:26109453

3D Printable Graphene Composite

PubMed Central

Wei, Xiaojun; Li, Dong; Jiang, Wei; Gu, Zheming; Wang, Xiaojuan; Zhang, Zengxing; Sun, Zhengzong

2015-01-01

In human being’s history, both the Iron Age and Silicon Age thrived after a matured massive processing technology was developed. Graphene is the most recent superior material which could potentially initialize another new material Age. However, while being exploited to its full extent, conventional processing methods fail to provide a link to today’s personalization tide. New technology should be ushered in. Three-dimensional (3D) printing fills the missing linkage between graphene materials and the digital mainstream. Their alliance could generate additional stream to push the graphene revolution into a new phase. Here we demonstrate for the first time, a graphene composite, with a graphene loading up to 5.6 wt%, can be 3D printable into computer-designed models. The composite’s linear thermal coefficient is below 75 ppm·°C−1 from room temperature to its glass transition temperature (Tg), which is crucial to build minute thermal stress during the printing process. PMID:26153673

Printable sensors for explosive detonation

NASA Astrophysics Data System (ADS)

Griffith, Matthew J.; Cooling, Nathan A.; Elkington, Daniel C.; Muller, Elmar; Belcher, Warwick J.; Dastoor, Paul C.

2014-10-01

Here, we report the development of an organic thin film transistor (OTFT) based on printable solution processed polymers and employing a quantum tunnelling composite material as a sensor to convert the pressure wave output from detonation transmission tubing (shock tube) into an inherently amplified electronic signal for explosives initiation. The organic electronic detector allows detection of the signal in a low voltage operating range, an essential feature for sites employing live ordinances that is not provided by conventional electronic devices. We show that a 30-fold change in detector response is possible using the presented detector assembly. Degradation of the OTFT response with both time and repeated voltage scans was characterised, and device lifetime is shown to be consistent with the requirements for on-site printing and usage. The integration of a low cost organic electronic detector with inexpensive shock tube transmission fuse presents attractive avenues for the development of cheap and simple assemblies for precisely timed initiation of explosive chains.

Novel EUV mask black border suppressing EUV and DUV OoB light reflection

NASA Astrophysics Data System (ADS)

Ito, Shin; Kodera, Yutaka; Fukugami, Norihito; Komizo, Toru; Maruyama, Shingo; Watanabe, Genta; Yoshida, Itaru; Kotani, Jun; Konishi, Toshio; Haraguchi, Takashi

2016-05-01

EUV lithography is the most promising technology for semiconductor device manufacturing of the 10nm node and beyond. The image border is a pattern free dark area around the die on the photomask serving as transition area between the parts of the mask that is shielded from the exposure light by the Reticle Masking (REMA) blades and the die. When printing a die at dense spacing on an EUV scanner, the reflection from the image border overlaps edges of neighboring dies, affecting CD and contrast in this area. This is related to the fact that EUV absorber stack reflects 1-3% of actinic EUV light. To reduce this effect several types of image border with reduced EUV reflectance (<0.05%) have been proposed; such an image border is referred to as a black border. In particular, an etched multilayer type black border was developed; it was demonstrated that CD impact at the edge of a die is strongly reduced with this type of the black border (BB). However, wafer printing result still showed some CD change in the die influenced by the black border reflection. It was proven that the CD shift was caused by DUV Out of Band (OOB) light from the EUV light source. New types of a multilayer etched BB were evaluated and showed a good potential for DUV light suppression. In this study, a novel BB called `Hybrid Black Border' (HBB) has been developed to eliminate EUV and DUV OOB light reflection by applying optical design technique and special micro-fabrication technique. A new test mask with HBB is fabricated without any degradation of mask quality according to the result of CD performance in the main pattern, defectivity and cleaning durability. The imaging performance for N10 imaging structures is demonstrated on NXE:3300B in collaboration with ASML. This result is compared to the imaging results obtained for a mask with the earlier developed BB, and HBB has achieved ~3x improvement; less than 0.2 nm CD changes are observed in the corners of the die. A CD uniformity budget including impact of OOB light in the die edge area is evaluated which shows that the OOB impact from HBB becomes comparable with other CDU contributors in this area. Finally, we state that HBB is a promising technology allowing for CD control at die edges.

Printability of papers recycled from toner and inkjet-printed papers after deinking and recycling processes.

PubMed

Karademir, Arif; Aydemir, Cem; Tutak, Dogan; Aravamuthan, Raja

2018-04-01

In our contemporary world, while part of the fibers used in the paper industry is obtained from primary fibers such as wood and agricultural plants, the rest is obtained from secondary fibers from waste papers. To manufacture paper with high optical quality from fibers of recycled waste papers, these papers require deinking and bleaching of fibers at desired levels. High efficiency in removal of ink from paper mass during recycling, and hence deinkability, are especially crucial for the optical and printability quality of the ultimate manufactured paper. In the present study, deinkability and printability performance of digitally printed paper with toner or inkjet ink were compared for the postrecycling product. To that end, opaque 80 g/m 2 office paper was digitally printed under standard printing conditions with laser toner or inkjet ink; then these sheets of paper were deinked by a deinking process based on the INGEDE method 11 p. After the deinking operation, the optical properties of the obtained recycled handsheets were compared with unprinted (reference) paper. Then the recycled paper was printed on once again under the same conditions as before with inkjet and laser printers, to monitor and measure printing color change before and after recycling, and differences in color universe. Recycling and printing performances of water-based inkjet and toner-based laser printed paper were obtained. The outcomes for laser-printed recycled paper were better than those for inkjet-printed recycled paper. Compared for luminosity Y, brightness, CIE a* and CIE b* values, paper recycled from laser-printed paper exhibited higher value than paper recycled from inkjet-printed paper.

Tailoring nanostructure and bioactivity of 3D printable hydrogels with self-assemble Peptides Amphiphile (PA) for promoting bile duct formation.

PubMed

Yan, Ming; Lewis, Phillip L; Shah, Ramille N

2018-05-31

3D-printing has expanded our ability to produce reproducible and more complex scaffold architectures for tissue engineering applications. In order to enhance the biological response within these 3D printed scaffolds incorporating nanostructural features and/or specific biological signaling may be an effective means to optimize tissue regeneration. Peptides Amphiphiles (PAs) are a versatile supramolecular biomaterial with tailorable nanostructural and biochemical features. PAs are widely used in tissue engineering applications such as angiogenesis, neurogenesis, and bone regeneration. Thus, the addition of PAs is a potential solution that can greatly expand the utility of 3D bio-printing hydrogels in the field of regenerative medicine. In this paper, we firstly developed a 3D printable thiolated-gelatin bioink supplemented with PAs to tailor the bioactivity and nanostructure which allows for the incorporation of cells. The bioink can be printed at 4 °C and stabilized to last a long time (>1 month) in culture at 37 °C by via a dual secondary cross-linking strategy using calcium ions and homobifunctional maleiminde-poly (ethylene glycol). Rheological properties of inks were characterized and were suitable for printing multi-layered structures. We additionally demonstrated enhanced functionality of ink formulations by utilizing a laminin-mimetic IKVAV-based PA system within a 3D-printable ink containing cholangiocytes. Viability and functional staining showed that the IKVAV PA nanofibers stimulated cholangioctyes to form functional tubular structures, which was not observed in other ink formulations. . © 2018 IOP Publishing Ltd.

Toward optimized light utilization in nanowire arrays using scalable nanosphere lithography and selected area growth.

PubMed

Madaria, Anuj R; Yao, Maoqing; Chi, Chunyung; Huang, Ningfeng; Lin, Chenxi; Li, Ruijuan; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

2012-06-13

Vertically aligned, catalyst-free semiconducting nanowires hold great potential for photovoltaic applications, in which achieving scalable synthesis and optimized optical absorption simultaneously is critical. Here, we report combining nanosphere lithography (NSL) and selected area metal-organic chemical vapor deposition (SA-MOCVD) for the first time for scalable synthesis of vertically aligned gallium arsenide nanowire arrays, and surprisingly, we show that such nanowire arrays with patterning defects due to NSL can be as good as highly ordered nanowire arrays in terms of optical absorption and reflection. Wafer-scale patterning for nanowire synthesis was done using a polystyrene nanosphere template as a mask. Nanowires grown from substrates patterned by NSL show similar structural features to those patterned using electron beam lithography (EBL). Reflection of photons from the NSL-patterned nanowire array was used as a measure of the effect of defects present in the structure. Experimentally, we show that GaAs nanowires as short as 130 nm show reflection of <10% over the visible range of the solar spectrum. Our results indicate that a highly ordered nanowire structure is not necessary: despite the "defects" present in NSL-patterned nanowire arrays, their optical performance is similar to "defect-free" structures patterned by more costly, time-consuming EBL methods. Our scalable approach for synthesis of vertical semiconducting nanowires can have application in high-throughput and low-cost optoelectronic devices, including solar cells.

Genetics Home Reference: sudden infant death with dysgenesis of the testes syndrome

MedlinePlus

... Facebook Twitter Home Health Conditions SIDDT Sudden infant death with dysgenesis of the testes syndrome Printable PDF ... view the expand/collapse boxes. Description Sudden infant death with dysgenesis of the testes syndrome ( SIDDT ) is ...

Genetics Home Reference: myopathy with deficiency of iron-sulfur cluster assembly enzyme

MedlinePlus

... Myopathy with deficiency of iron-sulfur cluster assembly enzyme Printable PDF Open All Close All Enable Javascript ... Myopathy with deficiency of iron-sulfur cluster assembly enzyme is an inherited disorder that primarily affects muscles ...

3D Printed Microscope for Mobile Devices that Cost Pennies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Erikson, Rebecca; Baird, Cheryl; Hutchinson, Janine

Scientists at PNNL have designed a 3D-printable microscope for mobile devices using pennies worth of plastic and glass materials. The microscope has a wide range of uses, from education to in-the-field science.

NREL: Renewable Resource Data Center - Wind Resource Related Links

Science.gov Websites

websites. Data can be purchased from companies such as AWS TruePower and 3Tier. Note: Listing other commercial companies does not imply endorsement by NREL. . Printable Version RReDC Home Biomass Resource

3D Printed Microscope for Mobile Devices that Cost Pennies

ScienceCinema

Erikson, Rebecca; Baird, Cheryl; Hutchinson, Janine

2018-02-13

Scientists at PNNL have designed a 3D-printable microscope for mobile devices using pennies worth of plastic and glass materials. The microscope has a wide range of uses, from education to in-the-field science.

Genetics Home Reference: X-linked hyper IgM syndrome

MedlinePlus

... Home Health Conditions X-linked hyper IgM syndrome X-linked hyper IgM syndrome Printable PDF Open All ... Javascript to view the expand/collapse boxes. Description X-linked hyper IgM syndrome is a condition that ...

Printable Spacecraft: Flexible Electronic Platforms for NASA Missions. Phase One

NASA Technical Reports Server (NTRS)

Short, Kendra (Principal Investigator); Van Buren, David (Principal Investigator)

2012-01-01

Atmospheric confetti. Inchworm crawlers. Blankets of ground penetrating radar. These are some of the unique mission concepts which could be enabled by a printable spacecraft. Printed electronics technology offers enormous potential to transform the way NASA builds spacecraft. A printed spacecraft's low mass, volume and cost offer dramatic potential impacts to many missions. Network missions could increase from a few discrete measurements to tens of thousands of platforms improving areal density and system reliability. Printed platforms could be added to any prime mission as a low-cost, minimum resource secondary payload to augment the science return. For a small fraction of the mass and cost of a traditional lander, a Europa flagship mission might carry experimental printed surface platforms. An Enceladus Explorer could carry feather-light printed platforms to release into volcanic plumes to measure composition and impact energies. The ability to print circuits directly onto a variety of surfaces, opens the possibility of multi-functional structures and membranes such as "smart" solar sails and balloons. The inherent flexibility of a printed platform allows for in-situ re-configurability for aerodynamic control or mobility. Engineering telemetry of wheel/soil interactions are possible with a conformal printed sensor tape fit around a rover wheel. Environmental time history within a sample return canister could be recorded with a printed sensor array that fits flush to the interior of the canister. Phase One of the NIAC task entitled "Printable Spacecraft" investigated the viability of printed electronics technologies for creating multi-functional spacecraft platforms. Mission concepts and architectures that could be enhanced or enabled with this technology were explored. This final report captures the results and conclusions of the Phase One study. First, the report presents the approach taken in conducting the study and a mapping of results against the proposed Phase One objectives. Then an overview of the general field of printed electronics is provided, including manufacturing approaches, commercial drivers, and the current state of integrated systems. The bulk of the report contains the results and findings of Phase One organized into four sections: a survey of components required for a printable spacecraft, technology roadmaps considerations, science mission and engineering applications, and potential risks and challenges of the technology.

A New Selective Area Lateral Epitaxy Approach for Depositing a-Plane GaN over r-Plane Sapphire

NASA Astrophysics Data System (ADS)

Chen, Changqing; Zhang, Jianping; Yang, Jinwei; Adivarahan, Vinod; Rai, Shiva; Wu, Shuai; Wang, Hongmei; Sun, Wenhong; Su, Ming; Gong, Zheng; Kuokstis, Edmundas; Gaevski, Mikhail; Khan, Muhammad Asif

2003-07-01

We report a new epitaxy procedure for growing extremely low defect density a-plane GaN films over r-plane sapphire. By combining selective area growth through a SiO2 mask opening to produce high height to width aspect ratio a-plane GaN pillars and lateral epitaxy from their c-plane facets, we obtained fully coalesced a-plane GaN films. The excellent structural, optical and electrical characteristics of these selective area lateral epitaxy (SALE) deposited films make them ideal for high efficiency III-N electronic and optoelectronic devices.

III-V compound semiconductor material characterization of microstructures and nanostructures on various optoelectronic devices with analytical transmission electron microscopy and high resolution electron microscopy

NASA Astrophysics Data System (ADS)

Zhou, Wei

Analytical Transmission Electron Microscopy (TEM) and High Resolution Electron Microscopy have been carried out to characterize microstructures and nanostructures in various III-V compound semiconductor devices by metalorganic chemical vapor deposition (MOCVD). The low-defect GaN nonplanar templates by lateral epitaxial overgrowth (LEO) has a trapezoidal cross-section with smooth (0001) and {112¯2} facets. Penetration of threading dislocations (TDs) beyond mask windows is observed in ordinary LEO substrates. In two-step LEO substrates, where TDs are engineered to bend 90° in the TD bending layer after the first LEO step, only perfect a-type dislocations with Burgers vector b = 1/3 <112¯0> are generated in the upper Post-bending layer with a density of ˜8 x 107cm-2. The demonstrated 3-dimensional dislocation spatial distribution in the LEO nonplanar substrate substantiates the dislocation reaction mechanism. Al0.07GaN/GaN superlattice can further decrease dislocations. InGaN QW thickness enhancement on top of GaN nonplanar templates has been verified to influence the optoelectronic properties significantly. Dense arrays of hexagonally ordered MOCVD-grown (In)(Ga)As nano-QDs by block copolymer nanolithography & selective area growth (SAG), approximately 20nm in diameter and 40nm apart with a density of 1011/cm 2, are perfect crystals by TEM. V-shaped defects and worse InAs growth uniformity have been observed in multiple layers of vertically coupled self-assembled InAs nanostructure arrays on strain-modulated GaAs substrates. TEM shows a smooth coalesced GaN surface with a thickness as thin as ˜200nm after Nano-LEO and a defect reduction of 70%-75%. The (In)GaAs 20 nm twist bonded compliant substrates have almost no compliant effect and higher dislocation density, but the 10nm compliant substrates are on the contrary. A 60nm oxygen-infiltrated crystallized transition layer is observed between the amorphous oxidized layer and the crystallized unoxidized aperture in Al xGa1-xAs wet lateral oxidation, potentially influencing the current confinement characteristic of the sub-micron oxide aperture. Almost no dislocation is aroused by the wet lateral oxidation of In0.52Al 0.48As in the InP microresonator waveguides. XTEM was performed to compare InP SAG regions with 10˜50mum masks, which shows the performance deterioration of laser threshold current densities in the case of 50mum mask results from high density of dislocations induced from the highly strained QW structures caused by the high enhancements.

The role of surface diffusion and wing tilt in the formation of localized stacking faults in high In-content InGaN MQW nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakajima, Yoshitake; Dapkus, P. Daniel

Yellow and green emitting multiple quantum well structures are grown on nanostripe templates with {10-11} facets. SEM and cathodoluminescence measurements show a correlation between rough surface morphology near the bottom of the stripes and non-radiative recombination centers. Transmission electron microscopy (TEM) analysis shows that these surface instabilities are a result of stacking faults generated from the quantum well (QW) regions near the bottom of the pyramid that propagate to the surface. HRTEM images show that the stacking faults are I{sub 1} type which is formed by removal of one half basal plane to relieve the compressive strain in the InGaNmore » QW. Thicker QWs near the bottom as a result of growth rate enhancement due to the surface diffusion of the precursors from the mask regions cause increased strain. Additionally, the compressive strain induced by the bending of the nanostructure towards the growth mask further increases the strain experienced by the QW thereby causing the localized defect generation.« less

Silicon patterning using ion blistering and e-beam lithography

NASA Astrophysics Data System (ADS)

Giguere, A.; Terreault, B.; Beerens, J.; Aimez, V.; Beauvais, J.

2004-03-01

We explore the limits of silicon patterning using ion blistering in conjunction with e-beam lithography. In a first approach, we implanted 3.5E16 H/cm**2 at 5 keV through variable width (0.1-10 micron) e-beam written PMMA masks. The resist was then removed and the samples were rapid-thermal-annealed (RTA) up to 650 °C. In the wider trenches, round blisters with 800-900 nm diameter and 15 nm height and a few exfoliations are observed, which are similar to those observed on an unmasked surface. In submicron trenches (500-1000 nm), there is a transition in morphology created by the proximity to the border; the blisters are smaller and they are densely aligned along the trench direction ("pearl-string" pattern). No effect is observed in the lowest dimension trenches. The results are discussed in terms of stress/strain fields, defect configuration, and mask shadowing and charging effects. Ultimate pattern resolution will be limited by lateral straggling of the ions in and by the mechanics of lateral crack propagation.

Surface Structure Characterization of Aspergillus fumigatus Conidia Mutated in the Melanin Synthesis Pathway and Their Human Cellular Immune Response

PubMed Central

Bayry, Jagadeesh; Beaussart, Audrey; Dufrêne, Yves F.; Sharma, Meenu; Bansal, Kushagra; Kniemeyer, Olaf; Aimanianda, Vishukumar; Brakhage, Axel A.; Kaveri, Srini V.; Kwon-Chung, Kyung J.

2014-01-01

In Aspergillus fumigatus, the conidial surface contains dihydroxynaphthalene (DHN)-melanin. Six-clustered gene products have been identified that mediate sequential catalysis of DHN-melanin biosynthesis. Melanin thus produced is known to be a virulence factor, protecting the fungus from the host defense mechanisms. In the present study, individual deletion of the genes involved in the initial three steps of melanin biosynthesis resulted in an altered conidial surface with masked surface rodlet layer, leaky cell wall allowing the deposition of proteins on the cell surface and exposing the otherwise-masked cell wall polysaccharides at the surface. Melanin as such was immunologically inert; however, deletion mutant conidia with modified surfaces could activate human dendritic cells and the subsequent cytokine production in contrast to the wild-type conidia. Cell surface defects were rectified in the conidia mutated in downstream melanin biosynthetic pathway, and maximum immune inertness was observed upon synthesis of vermelone onward. These observations suggest that although melanin as such is an immunologically inert material, it confers virulence by facilitating proper formation of the A. fumigatus conidial surface. PMID:24818666

The role of surface diffusion and wing tilt in the formation of localized stacking faults in high In-content InGaN MQW nanostructures

NASA Astrophysics Data System (ADS)

Nakajima, Yoshitake; Dapkus, P. Daniel

2016-08-01

Yellow and green emitting multiple quantum well structures are grown on nanostripe templates with {10-11} facets. SEM and cathodoluminescence measurements show a correlation between rough surface morphology near the bottom of the stripes and non-radiative recombination centers. Transmission electron microscopy (TEM) analysis shows that these surface instabilities are a result of stacking faults generated from the quantum well (QW) regions near the bottom of the pyramid that propagate to the surface. HRTEM images show that the stacking faults are I1 type which is formed by removal of one half basal plane to relieve the compressive strain in the InGaN QW. Thicker QWs near the bottom as a result of growth rate enhancement due to the surface diffusion of the precursors from the mask regions cause increased strain. Additionally, the compressive strain induced by the bending of the nanostructure towards the growth mask further increases the strain experienced by the QW thereby causing the localized defect generation.

Negative-tone imaging with EUV exposure toward 13nm hp

NASA Astrophysics Data System (ADS)

Tsubaki, Hideaki; Nihashi, Wataru; Tsuchihashi, Toru; Yamamoto, Kei; Goto, Takahiro

2016-03-01

Negative-tone imaging (NTI) with EUV exposure has major advantages with respect to line-width roughness (LWR) and resolution due in part to polymer swelling and favorable dissolution mechanics. In NTI process, both resist and organic solvents play important roles in determining lithography performances. The present study describes novel chemically amplified resist materials based on NTI technology with EUV using a specific organic solvents. Lithographic performances of NTI process were described in this paper under exposures using ASML NXE:3300 EUV scanner at imec. It is emphasized that 14 nm hp was nicely resolved under exposure dose of 37 mJ/cm2 without any bridge and collapse, which are attributed to the low swelling character of NTI process. Although 13 nm hp resolution was potentially obtained, a pattern collapse still restricts its resolution in case coating resist film thickness is 40 nm. Dark mask limitation due mainly to mask defectivity issue makes NTI with EUV favorable approach for printing block mask to produce logic circuit. A good resolution of CD-X 21 nm/CD-Y 32 nm was obtained for block mask pattern using NTI with usable process window and dose of 49 mJ/cm2. Minimum resolution now reaches CD-X 17 nm / CD-Y 23 nm for the block. A 21 nm block mask resolution was not affected by exposure dose and explored toward low dose down to 18 mJ/cm2 by reducing quencher loading. In addition, there was a negligible amount of increase in LCDU for isolated dot pattern when decreasing exposure dose from 66 mJ/cm2 to 24 mJ/cm2. On the other hand, there appeared tradeoff relationship between LCDU and dose for dense dot pattern, indicating photon-shot noise restriction, but strong dependency on patterning features. Design to improve acid generation efficiency was described based on acid generation mechanism in traditional chemically amplified materials which contains photo-acid generator (PAG) and polymer. Conventional EUV absorber comprises of organic compounds is expected to have 1.6 times higher EUV absorption than polyhydroxystyrene based on calculation. However, observed value of acid amount was comparable or significantly worse than polyhydroxystyrene.

Evidence for an Intrinsic Renal Tubular Defect in Mice with Genetic Hypophosphatemic Rickets

PubMed Central

Cowgill, Larry D.; Goldfarb, Stanley; Lau, Kai; Slatopolsky, Eduardo; Agus, Zalman S.

1979-01-01

To investigate the role of parathyroid hormone (PTH) and(or) an intrinsic renal tubular reabsorptive defect for phosphate in mice with hereditary hypophosphatemic rickets, we performed clearance and micropuncture studies in hypophosphatemic mutants and nonaffected littermate controls. Increased fractional excretion of phosphate in mutants (47.2±4 vs. 30.8±2% in controls) was associated with reduced fractional and absolute reabsorption in the proximal convoluted tubule and more distal sites. Acute thyropara-thyroidectomy (TPTX) increased phosphate reabsorption in both mutants and controls with a fall in fractional phosphate excretion to ≅7.5% in both groups indicating that PTH modified the degree of phosphaturia in the intact mutants. Absolute reabsorption in the proximal tubule and beyond remained reduced in the mutants, however, possibly because of the reduced filtered load. Serum PTH levels were the same in intact mutants and normals as was renal cortical adenylate cyclase activity both before and after PTH stimulation. To evaluate the possibility that the phosphate wasting was caused by an intrinsic tubular defect that was masked by TPTX, glomerular fluid phosphate concentration was raised by phosphate infusion in TPTX mutants to levels approaching those of control mice. Phosphate excretion rose markedly and fractional reabsorption fell, but there was no change in absolute phosphate reabsorption in either the proximal tubule or beyond, indicating a persistent reabsorptive defect in the absence of PTH. We conclude that hereditary hypophosphatemia in the mouse is associated with a renal tubular defect in phosphate reabsorption, which is independent of PTH and therefore represents a specific intrinsic abnormality of phosphate transport. PMID:221535

Suppression of AKT phosphorylation restores rapamycin-based synthetic lethality in SMAD4-defective pancreatic cancer cells.

PubMed

Le Gendre, Onica; Sookdeo, Ayisha; Duliepre, Stephie-Anne; Utter, Matthew; Frias, Maria; Foster, David A

2013-05-01

mTOR has been implicated in survival signals for many human cancers. Rapamycin and TGF-β synergistically induce G1 cell-cycle arrest in several cell lines with intact TGF-β signaling pathway, which protects cells from the apoptotic effects of rapamycin during S-phase of the cell cycle. Thus, rapamycin is cytostatic in the presence of serum/TGF-β and cytotoxic in the absence of serum. However, if TGF-β signaling is defective, rapamycin induced apoptosis in both the presence and absence of serum/TGF-β in colon and breast cancer cell lines. Because genetic dysregulation of TGF-β signaling is commonly observed in pancreatic cancers-with defects in the Smad4 gene being most prevalent, we hypothesized that pancreatic cancers would display a synthetic lethality to rapamycin in the presence of serum/TGF-β. We report here that Smad4-deficient pancreatic cancer cells are killed by rapamycin in the absence of serum; however, in the presence of serum, we did not observe the predicted synthetic lethality with rapamycin. Rapamycin also induced elevated phosphorylation of the survival kinase Akt at Ser473. Suppression of rapamycin-induced Akt phosphorylation restored rapamycin sensitivity in Smad4-null, but not Smad4 wild-type pancreatic cancer cells. This study shows that the synthetic lethality to rapamycin in pancreatic cancers with defective TGF-β signaling is masked by rapamycin-induced increases in Akt phosphorylation. The implication is that a combination of approaches that suppress both Akt phosphorylation and mTOR could be effective in targeting pancreatic cancers with defective TGF-β signaling. ©2013 AACR.

High-Performance Screen-Printed Thermoelectric Films on Fabrics

DOE PAGES

Shin, Sunmi; Kumar, Rajan; Roh, Jong Wook; ...

2017-08-04

Printing techniques could offer a scalable approach to fabricate thermoelectric (TE) devices on flexible substrates for power generation used in wearable devices and personalized thermo-regulation. However, typical printing processes need a large concentration of binder additives, which often render a detrimental effect on electrical transport of the printed TE layers. Here, we report scalable screenprinting of TE layers on flexible fiber glass fabrics, by rationally optimizing the printing inks consisting of TE particles (p-type Bi 0.5Sb 1.5Te 3 or n-type Bi 2Te 2.7Se 0.3), binders, and organic solvents. We identified a suitable binder additive, methyl cellulose, which offers suitable viscositymore » for printability at a very small concentration (0.45–0.60 wt.%), thus minimizing its negative impact on electrical transport. Following printing, the binders were subsequently burnt off via sintering and hot pressing. We found that the nanoscale defects left behind after the binder burnt off became effective phonon scattering centers, leading to low lattice thermal conductivity in the printed n-type material. With the high electrical conductivity and low thermal conductivity, the screen-printed TE layers showed high room-temperature ZT values of 0.65 and 0.81 for p-type and n-type, respectively.« less

High-Performance Screen-Printed Thermoelectric Films on Fabrics.

PubMed

Shin, Sunmi; Kumar, Rajan; Roh, Jong Wook; Ko, Dong-Su; Kim, Hyun-Sik; Kim, Sang Il; Yin, Lu; Schlossberg, Sarah M; Cui, Shuang; You, Jung-Min; Kwon, Soonshin; Zheng, Jianlin; Wang, Joseph; Chen, Renkun

2017-08-04

Printing techniques could offer a scalable approach to fabricate thermoelectric (TE) devices on flexible substrates for power generation used in wearable devices and personalized thermo-regulation. However, typical printing processes need a large concentration of binder additives, which often render a detrimental effect on electrical transport of the printed TE layers. Here, we report scalable screen-printing of TE layers on flexible fiber glass fabrics, by rationally optimizing the printing inks consisting of TE particles (p-type Bi 0.5 Sb 1.5 Te 3 or n-type Bi 2 Te 2.7 Se 0.3 ), binders, and organic solvents. We identified a suitable binder additive, methyl cellulose, which offers suitable viscosity for printability at a very small concentration (0.45-0.60 wt.%), thus minimizing its negative impact on electrical transport. Following printing, the binders were subsequently burnt off via sintering and hot pressing. We found that the nanoscale defects left behind after the binder burnt off became effective phonon scattering centers, leading to low lattice thermal conductivity in the printed n-type material. With the high electrical conductivity and low thermal conductivity, the screen-printed TE layers showed high room-temperature ZT values of 0.65 and 0.81 for p-type and n-type, respectively.

High-Performance Screen-Printed Thermoelectric Films on Fabrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shin, Sunmi; Kumar, Rajan; Roh, Jong Wook

Printing techniques could offer a scalable approach to fabricate thermoelectric (TE) devices on flexible substrates for power generation used in wearable devices and personalized thermo-regulation. However, typical printing processes need a large concentration of binder additives, which often render a detrimental effect on electrical transport of the printed TE layers. Here, we report scalable screenprinting of TE layers on flexible fiber glass fabrics, by rationally optimizing the printing inks consisting of TE particles (p-type Bi 0.5Sb 1.5Te 3 or n-type Bi 2Te 2.7Se 0.3), binders, and organic solvents. We identified a suitable binder additive, methyl cellulose, which offers suitable viscositymore » for printability at a very small concentration (0.45–0.60 wt.%), thus minimizing its negative impact on electrical transport. Following printing, the binders were subsequently burnt off via sintering and hot pressing. We found that the nanoscale defects left behind after the binder burnt off became effective phonon scattering centers, leading to low lattice thermal conductivity in the printed n-type material. With the high electrical conductivity and low thermal conductivity, the screen-printed TE layers showed high room-temperature ZT values of 0.65 and 0.81 for p-type and n-type, respectively.« less

Enhanced capture rate for haze defects in production wafer inspection

NASA Astrophysics Data System (ADS)

Auerbach, Ditza; Shulman, Adi; Rozentsvige, Moshe

2010-03-01

Photomask degradation via haze defect formation is an increasing troublesome yield problem in the semiconductor fab. Wafer inspection is often utilized to detect haze defects due to the fact that it can be a bi-product of process control wafer inspection; furthermore, the detection of the haze on the wafer is effectively enhanced due to the multitude of distinct fields being scanned. In this paper, we demonstrate a novel application for enhancing the wafer inspection tool's sensitivity to haze defects even further. In particular, we present results of bright field wafer inspection using the on several photo layers suffering from haze defects. One way in which the enhanced sensitivity can be achieved in inspection tools is by using a double scan of the wafer: one regular scan with the normal recipe and another high sensitivity scan from which only the repeater defects are extracted (the non-repeater defects consist largely of noise which is difficult to filter). Our solution essentially combines the double scan into a single high sensitivity scan whose processing is carried out along two parallel routes (see Fig. 1). Along one route, potential defects follow the standard recipe thresholds to produce a defect map at the nominal sensitivity. Along the alternate route, potential defects are used to extract only field repeater defects which are identified using an optimal repeater algorithm that eliminates "false repeaters". At the end of the scan, the two defect maps are merged into one with optical scan images available for all the merged defects. It is important to note, that there is no throughput hit; in addition, the repeater sensitivity is increased relative to a double scan, due to a novel runtime algorithm implementation whose memory requirements are minimized, thus enabling to search a much larger number of potential defects for repeaters. We evaluated the new application on photo wafers which consisted of both random and haze defects. The evaluation procedure involved scanning with three different recipe types: Standard Inspection: Nominal recipe with a low false alarm rate was used to scan the wafer and repeaters were extracted from the final defect map. Haze Monitoring Application: Recipe sensitivity was enhanced and run on a single field column from which on repeating defects were extracted. Enhanced Repeater Extractor: Defect processing included the two parallel routes: a nominal recipe for the random defects and the new high sensitive repeater extractor algorithm. The results showed that the new application (recipe #3) had the highest capture rate on haze defects and detected new repeater defects not found in the first two recipes. In addition, the recipe was much simpler to setup since repeaters are filtered separately from random defects. We expect that in the future, with the advent of mask-less lithography and EUV lithography, the monitoring of field and die repeating defects on the wafer will become a necessity for process control in the semiconductor fab.

Helping Your Child through Early Adolescence -- Helping Your Child Series

MedlinePlus

... Bibliography Acknowledgements Tips to Help Your Child through Early Adolescence No Child Left Behind < Previous page | ^ Top ^ | Next page > Printable ... Information About... Transforming Teaching Family and Community Engagement Early Learning Helping Your Child Our mission is to promote student achievement and ...

An Office Building Occupants Guide to Indoor Air Quality - Printable Version

EPA Pesticide Factsheets

This guide is intended to help people who work in office buildings learn about the factors that contribute to indoor air quality and comfort problems and the roles of building managers and occupants in maintaining a good indoor environment.

NREL: International Activities - Fourth Renewable Energy Industries Forum

Science.gov Websites

Speakers and Presentations International Activities Printable Version Fourth Renewable Energy Industries Forum Speakers and Presentations The Fourth Renewable Energy Industries Forum (REIF) speakers and practices, opportunities and challenges of utility and distributed projects, renewable energy integration

Applications of MICP source for next-generation photomask process

NASA Astrophysics Data System (ADS)

Kwon, Hyuk-Joo; Chang, Byung-Soo; Choi, Boo-Yeon; Park, Kyung H.; Jeong, Soo-Hong

2000-07-01

As critical dimensions of photomask extends into submicron range, critical dimension uniformity, edge roughness, macro loading effect, and pattern slope become tighter than before. Fabrication of photomask relies on the ability to pattern features with anisotropic profile. To improve critical dimension uniformity, dry etcher is one of the solution and inductively coupled plasma (ICP) sources have become one of promising high density plasma sources for dry etcher. In this paper, we have utilized dry etcher system with multi-pole ICP source for Cr etch and MoSi etch and have investigated critical dimension uniformity, slope, and defects. We will present dry etch process data by process optimization of newly designed dry etcher system. The designed pattern area is 132 by 132 mm2 with 23 by 23 matrix test patterns. 3 (sigma) of critical dimension uniformity is below 12 nm at 0.8 - 3.0 micrometers . In most cases, we can obtain zero defect masks which is operated by face- down loading.

Defect generation in silicon dioxide from synchrotron radiation below 41 eV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Williams, C. K.; Reisman, A.; Bhattacharya, P.

1989-07-01

Generation of fixed positive charge, neutral electron traps, and fixednegative charge in SiO/sub 2/ due to exposure to x radiation in the photon energyrange below 41 eV from a synchrotron source is reported. For constant incidentx-radiation exposure levels of 120 mJ/cm/sup 2/ with both monochromatic andbroadband radiation, the number of defects generated in the monitoring deviceswas at or below the detection limit of the equipment. This is in sharp contrastwith the results obtained at photon energies above 300 eV reported earlier (C.K. Williams, A. Reisman, P. K. Bhattacharya, and W. Ng, J. Appl. Phys./bold 64/, 1145 (1988)) in which amore » large number of each of the three defectsmentioned above were generated. The lack of damage indicates that the problemsassociated with x-ray-induced insulator damage due to x-ray lithography may besolved by tailoring the photon energy, provided suitable mask and photoresistmaterials can be developed.« less

High-volume manufacturing compatible dry development rinse process (DDRP): patterning and defectivity performance for EUVL

NASA Astrophysics Data System (ADS)

Sayan, Safak; Vanelderen, Pieter; Hetel, Iulian; Chan, BT; Raghavan, Praveen; Blanco, Victor; Foubert, Philippe; D'urzo, Lucia; De Simone, Danilo; Vandenberghe, Geert

2017-04-01

There are many knobs available that change the chemical and physical properties of the photoresists to "break" the RLS (Resolution, Sensitivity, Line edge/width roughness) trade-off, however those are not enough today to realize a material to satisfy all requirements at once for 7nm technology and beyond. DDRP improves the ultimate achievable resolution via pattern collapse mitigation, hence the priority of requirements for the EUV photoresist development may be changed with more focus on Sensitivity and LWR. This may potentially provide a new conceptual approach towards EUV PR development for DDRP applications. We have previously demonstrated pattern collapse (PC) mitigation via DDRP on different EUVL photoresists (including different resist platforms), achieving ultimate resolution and exposure latitude improvements [1,2]. In this contribution, we report patterning and material defect performance of HVM compatible (all aqueous) dry development rinse material. We will also report on process window improvement on 2-dimensional metal structures towards standard cell size reduction with elimination of mask layer(s) using single EUV exposure.

Simulations of 3D bioprinting: predicting bioprintability of nanofibrillar inks.

PubMed

Göhl, Johan; Markstedt, Kajsa; Mark, Andreas; Håkansson, Karl; Gatenholm, Paul; Edelvik, Fredrik

2018-06-18

3D bioprinting with cell containing bioinks show great promise in the biofabrication of patient specific tissue constructs. To fulfil the multiple requirements of a bioink, a wide range of materials and bioink composition are being developed and evaluated with regard to cell viability, mechanical performance and printability. It is essential that the printability and printing fidelity is not neglected since failure in printing the targeted architecture may be catastrophic for the survival of the cells and consequently the function of the printed tissue. However, experimental evaluation of bioinks printability is time-consuming and must be kept at a minimum, especially when 3D bioprinting with cells that are valuable and costly. This paper demonstrates how experimental evaluation could be complemented with computer based simulations to evaluate newly developed bioinks. Here, a computational fluid dynamics simulation tool was used to study the influence of different printing parameters and evaluate the predictability of the printing process. Based on data from oscillation frequency measurements of the evaluated bioinks, a full stress rheology model was used, where the viscoelastic behaviour of the material was captured. Simulation of the 3D bioprinting process is a powerful tool and will help in reducing the time and cost in the development and evaluation of bioinks. Moreover, it gives the opportunity to isolate parameters such as printing speed, nozzle height, flow rate and printing path to study their influence on the printing fidelity and the viscoelastic stresses within the bioink. The ability to study these features more extensively by simulating the printing process will result in a better understanding of what influences the viability of cells in 3D bioprinted tissue constructs.

EPA Releases Update to Popular School Integrated Pest Management Publication

EPA Pesticide Factsheets

An updated version reflects recent innovations in school IPM, provides links to new information, and has been redesigned into an easily printable format. It provides an overview of IPM and details the steps a school can follow to establish an IPM program.

Water-based and biocompatible 2D crystal inks for all-inkjet-printed heterostructures

NASA Astrophysics Data System (ADS)

McManus, Daryl; Vranic, Sandra; Withers, Freddie; Sanchez-Romaguera, Veronica; Macucci, Massimo; Yang, Huafeng; Sorrentino, Roberto; Parvez, Khaled; Son, Seok-Kyun; Iannaccone, Giuseppe; Kostarelos, Kostas; Fiori, Gianluca; Casiraghi, Cinzia

2017-05-01

Exploiting the properties of two-dimensional crystals requires a mass production method able to produce heterostructures of arbitrary complexity on any substrate. Solution processing of graphene allows simple and low-cost techniques such as inkjet printing to be used for device fabrication. However, the available printable formulations are still far from ideal as they are either based on toxic solvents, have low concentration, or require time-consuming and expensive processing. In addition, none is suitable for thin-film heterostructure fabrication due to the re-mixing of different two-dimensional crystals leading to uncontrolled interfaces and poor device performance. Here, we show a general approach to achieve inkjet-printable, water-based, two-dimensional crystal formulations, which also provide optimal film formation for multi-stack fabrication. We show examples of all-inkjet-printed heterostructures, such as large-area arrays of photosensors on plastic and paper and programmable logic memory devices. Finally, in vitro dose-escalation cytotoxicity assays confirm the biocompatibility of the inks, extending their possible use to biomedical applications.

Application of Extrusion-Based Hydrogel Bioprinting for Cartilage Tissue Engineering.

PubMed

You, Fu; Eames, B Frank; Chen, Xiongbiao

2017-07-23

Extrusion-based bioprinting (EBB) is a rapidly developing technique that has made substantial progress in the fabrication of constructs for cartilage tissue engineering (CTE) over the past decade. With this technique, cell-laden hydrogels or bio-inks have been extruded onto printing stages, layer-by-layer, to form three-dimensional (3D) constructs with varying sizes, shapes, and resolutions. This paper reviews the cell sources and hydrogels that can be used for bio-ink formulations in CTE application. Additionally, this paper discusses the important properties of bio-inks to be applied in the EBB technique, including biocompatibility, printability, as well as mechanical properties. The printability of a bio-ink is associated with the formation of first layer, ink rheological properties, and crosslinking mechanisms. Further, this paper discusses two bioprinting approaches to build up cartilage constructs, i.e., self-supporting hydrogel bioprinting and hybrid bioprinting, along with their applications in fabricating chondral, osteochondral, and zonally organized cartilage regenerative constructs. Lastly, current limitations and future opportunities of EBB in printing cartilage regenerative constructs are reviewed.

Hole-Transporting Materials for Printable Perovskite Solar Cells

PubMed Central

Salunke, Jagadish K.; Priimagi, Arri

2017-01-01

Perovskite solar cells (PSCs) represent undoubtedly the most significant breakthrough in photovoltaic technology since the 1970s, with an increase in their power conversion efficiency from less than 5% to over 22% in just a few years. Hole-transporting materials (HTMs) are an essential building block of PSC architectures. Currently, 2,2’,7,7’-tetrakis-(N,N’-di-p-methoxyphenylamine)-9,9’-spirobifluorene), better known as spiro-OMeTAD, is the most widely-used HTM to obtain high-efficiency devices. However, it is a tremendously expensive material with mediocre hole carrier mobility. To ensure wide-scale application of PSC-based technologies, alternative HTMs are being proposed. Solution-processable HTMs are crucial to develop inexpensive, high-throughput and printable large-area PSCs. In this review, we present the most recent advances in the design and development of different types of HTMs, with a particular focus on mesoscopic PSCs. Finally, we outline possible future research directions for further optimization of the HTMs to achieve low-cost, stable and large-area PSCs. PMID:28914823

All-printable band-edge modulated ZnO nanowire photodetectors with ultra-high detectivity

PubMed Central

Liu, Xi; Gu, Leilei; Zhang, Qianpeng; Wu, Jiyuan; Long, Yunze; Fan, Zhiyong

2014-01-01

High-performance photodetectors are critical for high-speed optical communication and environmental sensing, and flexible photodetectors can be used for a wide range of portable or wearable applications. Here we demonstrate the all-printable fabrication of polycrystalline nanowire-based high-performance photodetectors on flexible substrates. Systematic investigations have shown their ultra-high photoconductive gain, responsivity and detectivity up to 3.3 × 1017 Jones. Further analysis shows that their high performance originates from the unique band-edge modulation along the nanowire axial direction, where the existence of Schottky barriers in series leads to highly suppressed dark current of the device and also gives rise to fast photoelectric response to low-intensity optical signal owing to barrier height modulation. The discovered rationale in this work can be utilized as guideline to design high-performance photodetectors with other nanomaterial systems. The developed fabrication scheme opens up possibility for future flexible and high-performance integrated optoelectronic sensor circuitry. PMID:24898081

Three-Dimensional Printable High-Temperature and High-Rate Heaters.

PubMed

Yao, Yonggang; Fu, Kun Kelvin; Yan, Chaoyi; Dai, Jiaqi; Chen, Yanan; Wang, Yibo; Zhang, Bilun; Hitz, Emily; Hu, Liangbing

2016-05-24

High temperature heaters are ubiquitously used in materials synthesis and device processing. In this work, we developed three-dimensional (3D) printed reduced graphene oxide (RGO)-based heaters to function as high-performance thermal supply with high temperature and ultrafast heating rate. Compared with other heating sources, such as furnace, laser, and infrared radiation, the 3D printed heaters demonstrated in this work have the following distinct advantages: (1) the RGO based heater can operate at high temperature up to 3000 K because of using the high temperature-sustainable carbon material; (2) the heater temperature can be ramped up and down with extremely fast rates, up to ∼20 000 K/second; (3) heaters with different shapes can be directly printed with small sizes and onto different substrates to enable heating anywhere. The 3D printable RGO heaters can be applied to a wide range of nanomanufacturing when precise temperature control in time, placement, and the ramping rate are important.

Template-mediated nano-crystallite networks in semiconducting polymers.

PubMed

Kwon, Sooncheol; Yu, Kilho; Kweon, Kyoungchun; Kim, Geunjin; Kim, Junghwan; Kim, Heejoo; Jo, Yong-Ryun; Kim, Bong-Joong; Kim, Jehan; Lee, Seoung Ho; Lee, Kwanghee

2014-06-18

Unlike typical inorganic semiconductors with a crystal structure, the charge dynamics of π-conjugated polymers (π-CPs) are severely limited by the presence of amorphous portions between the ordered crystalline regions. Thus, the formation of interconnected pathways along crystallites of π-CPs is desired to ensure highly efficient charge transport in printable electronics. Here we report the formation of nano-crystallite networks in π-CP films by employing novel template-mediated crystallization (TMC) via polaron formation and electrostatic interaction. The lateral and vertical charge transport of TMC-treated films increased by two orders of magnitude compared with pristine π-CPs. In particular, because of the unprecedented room temperature and solution-processing advantages of our TMC method, we achieve a field-effect mobility of 0.25 cm(2) V(-1) s(-1) using a plastic substrate, which corresponds to the highest value reported thus far. Because our findings can be applied to various π-conjugated semiconductors, our approach is universal and is expected to yield high-performance printable electronics.

Semiconducting polymers with nanocrystallites interconnected via boron-doped carbon nanotubes.

PubMed

Yu, Kilho; Lee, Ju Min; Kim, Junghwan; Kim, Geunjin; Kang, Hongkyu; Park, Byoungwook; Ho Kahng, Yung; Kwon, Sooncheol; Lee, Sangchul; Lee, Byoung Hun; Kim, Jehan; Park, Hyung Il; Kim, Sang Ouk; Lee, Kwanghee

2014-12-10

Organic semiconductors are key building blocks for future electronic devices that require unprecedented properties of low-weight, flexibility, and portability. However, the low charge-carrier mobility and undesirable processing conditions limit their compatibility with low-cost, flexible, and printable electronics. Here, we present significantly enhanced field-effect mobility (μ(FET)) in semiconducting polymers mixed with boron-doped carbon nanotubes (B-CNTs). In contrast to undoped CNTs, which tend to form undesired aggregates, the B-CNTs exhibit an excellent dispersion in conjugated polymer matrices and improve the charge transport between polymer chains. Consequently, the B-CNT-mixed semiconducting polymers enable the fabrication of high-performance FETs on plastic substrates via a solution process; the μFET of the resulting FETs reaches 7.2 cm(2) V(-1) s(-1), which is the highest value reported for a flexible FET based on a semiconducting polymer. Our approach is applicable to various semiconducting polymers without any additional undesirable processing treatments, indicating its versatility, universality, and potential for high-performance printable electronics.

Nucleophilic stabilization of water-based reactive ink for titania-based thin film inkjet printing

NASA Astrophysics Data System (ADS)

Gadea, C.; Marani, D.; Esposito, V.

2017-02-01

Drop on demand deposition (DoD) of titanium oxide thin films (<500 nm) is performed via a novel titanium-alkoxide-based solution that is tailored as a reactive ink for inkjet printing. The ink is developed as water-based solution by a combined use of titanium isopropoxide and n-methyldiethanolamine (MDEA) used as nucleophilic ligand. The function of the ligand is to control the fast hydrolysis/condensation reactions in water for the metal alkoxide before deposition, leading to formation of the TiO2 only after the jet process. The evolution of the titanium-ligand interactions at increasing amount of MDEA is here elucidated in terms of long term stability. The ink printability parameter (Z) is optimized, resulting in a reactive solution with printability, Z, >1, and chemical stability up to 600 h. Thin titanium oxide films (<500 nm) are proved on different substrates. Pure anatase phase is obtained after annealing at low temperature (ca. 400 °C).

All-printable band-edge modulated ZnO nanowire photodetectors with ultra-high detectivity.

PubMed

Liu, Xi; Gu, Leilei; Zhang, Qianpeng; Wu, Jiyuan; Long, Yunze; Fan, Zhiyong

2014-06-05

High-performance photodetectors are critical for high-speed optical communication and environmental sensing, and flexible photodetectors can be used for a wide range of portable or wearable applications. Here we demonstrate the all-printable fabrication of polycrystalline nanowire-based high-performance photodetectors on flexible substrates. Systematic investigations have shown their ultra-high photoconductive gain, responsivity and detectivity up to 3.3 × 10(17) Jones. Further analysis shows that their high performance originates from the unique band-edge modulation along the nanowire axial direction, where the existence of Schottky barriers in series leads to highly suppressed dark current of the device and also gives rise to fast photoelectric response to low-intensity optical signal owing to barrier height modulation. The discovered rationale in this work can be utilized as guideline to design high-performance photodetectors with other nanomaterial systems. The developed fabrication scheme opens up possibility for future flexible and high-performance integrated optoelectronic sensor circuitry.

Effect of printing parameters on gravure patterning with conductive silver ink

NASA Astrophysics Data System (ADS)

Kim, Seunghwan; Sung, Hyung Jin

2015-04-01

Conductive line patterns were printed on a poly-dimethylsiloxane (PDMS) substrate using a gravure printing method with conductive silver ink. A plate-to-roll gravure print was prepared for this experiment. Gravure plates with fine lines 5-25 μm in width and 0-90° in tilted angles were fabricated using photolithography techniques. The printability, defined as the ratio of the real printed area to the ideal printed area, was measured and analyzed with respect to the process parameters and the line pattern designs. The effect of the process parameters on the fine line patterning was discussed, including the wiping condition, the printing pressure and the printing speed. The printability of the high adhesive substrate was examined by preparing a nanostructured PDMS substrate featuring a forest of 200 nm nanopillars using an anodic aluminum oxide (AAO) template. The patterns printed onto the nanostructured PDMS were compared with those printed on a flat PDMS substrate.

Capillary Thinning and Pinch-off Dynamics and Printability of Polyelectrolyte Solutions

NASA Astrophysics Data System (ADS)

Sharma, Vivek; Jimenez, Leidy N.; Dinic, Jelena; Parsi, Nikila

Biological macromolecules like proteins, DNA and polysaccharides, and many industrial polymers, are classified together as polyelectrolytes for in solution, the repeat units in their backbone are decorated with disassociated, charge-bearing ionic groups, surrounded by counter-ions. In diverse applications like inkjet printing, sprayable cosmetics and insecticides, paints and coatings that involve formation of fluid columns or sheets that undergo progressive thinning and pinch-off into drops, the dominant flow within the necking filament is extensional in nature. The extensional rheology response of the charged macromolecular solutions is not as well understood as that of their uncharged counterparts. Here focus on the characterization of capillary thinning and pinch-off dynamics, extensional rheology and printability of two model systems: sodium (polystyrene sulfonate) and poly(acrylic acid) by using dripping-onto-substrate (DoS) rheometry technique. Both the measured extensional relaxation times and the extensional viscosity values show salt- and polymer concentration-dependent behavior that is not expected or anticipated from the typical shear rheology response.

Printable and Rewritable Full Block Copolymer Structural Color.

PubMed

Kang, Han Sol; Lee, Jinseong; Cho, Suk Man; Park, Tae Hyun; Kim, Min Ju; Park, Chanho; Lee, Seung Won; Kim, Kang Lib; Ryu, Du Yeol; Huh, June; Thomas, Edwin L; Park, Cheolmin

2017-08-01

Structural colors (SCs) of photonic crystals (PCs) arise from selective constructive interference of incident light. Here, an ink-jet printable and rewritable block copolymer (BCP) SC display is demonstrated, which can be quickly written and erased over 50 times with resolution nearly equivalent to that obtained with a commercial office ink-jet printer. Moreover, the writing process employs an easily modified printer for position- and concentration-controlled deposition of a single, colorless, water-based ink containing a reversible crosslinking agent, ammonium persulfate. Deposition of the ink onto a self-assembled BCP PC film comprising a 1D stack of alternating layers enables differential swelling of the written BCP film and produces a full-colored SC display of characters and images. Furthermore, the information can be readily erased and the system can be reset by application of hydrogen bromide. Subsequently, new information can be rewritten, resulting in a chemically rewritable BCP SC display. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

SL2+: H5 use case

NASA Astrophysics Data System (ADS)

Ito, Kosuke; Liu, Steven; Lee, Isaac; Dover, Russell; Yu, Paul

2008-10-01

Photomask contamination inspections, whether performed at maskshops as an outgoing inspection or at wafer fabs for incoming shipping and handling or progressive defect monitoring, have been performed by KLA-Tencor STARlight systems for a number of design nodes. STARlight has evolved since it first appeared on the 3xx generation of KLA-Tencor mask inspection tools. It was improved with the TeraStar (also known as SLF) based tools with the SL1 algorithm. SL2 first appeared on the TeraScan systems (also known as 5xx) and has been widely adopted in both mask shops and wafer fabs. Design rules continue to advance as do inspection challenges. Advances in computer processing power have enabled more complex and powerful algorithms to be developed and applied to the STARlight technology. The current generation of STARlight, which is known as SL2+, implements improved modeling fidelity as well as a completely new paradigm to the existing STARlight technology known as HiRes5, or simply "H5". H5 is integrated seamlessly within SL2+ and provides die-to-die-like performance in both transmitted and reflected light, in addition to the STARlight detection, in unit time. It achieves this by automatically identifying repeating structures in both X and Y directions and applying image alignment and difference threshold. A leading mask shop partnered with KLA-Tencor in order to evaluate SL2+ at its facility. SL2+ demonstrated a high level of sensitivity on all test reticles, with good inspectability on advanced production reticles. High sensitivity settings were used for 45 nm HP and smaller design rule masks and low false detections were achieved. H5 provided additional sensitivity on production plates, demonstrating the ability to extend the use of SL2+ to cover 32 nm DR plate inspections. This paper reports the findings and results of this evaluation.

Three-Dimensional Magnetic Resonance Imaging Quantification of Glenoid Bone Loss Is Equivalent to 3-Dimensional Computed Tomography Quantification: Cadaveric Study.

PubMed

Yanke, Adam B; Shin, Jason J; Pearson, Ian; Bach, Bernard R; Romeo, Anthony A; Cole, Brian J; Verma, Nikhil N

2017-04-01

To assess the ability of 3-dimensional (3D) magnetic resonance imaging (MRI, 1.5 and 3 tesla [T]) to quantify glenoid bone loss in a cadaveric model compared with the current gold standard, 3D computed tomography (CT). Six cadaveric shoulders were used to create a bone loss model, leaving the surrounding soft tissues intact. The anteroposterior (AP) dimension of the glenoid was measured at the glenoid equator and after soft tissue layer closure the specimen underwent scanning (CT, 1.5-T MRI, and 3-T MRI) with the following methods (0%, 10%, and 25% defect by area). Raw axial data from the scans were segmented using manual mask manipulation for bone and reconstructed using Mimics software to obtain a 3D en face glenoid view. Using calibrated Digital Imaging and Communications in Medicine images, the diameter of the glenoid at the equator and the area of the glenoid defect was measured on all imaging modalities. In specimens with 10% or 25% defects, no difference was detected between imaging modalities when comparing the measured defect size (10% defect P = .27, 25% defect P = .73). All 3 modalities demonstrated a strong correlation with the actual defect size (CT, ρ = .97; 1.5-T MRI, ρ = .93; 3-T MRI, ρ = .92, P < .0001). When looking at the absolute difference between the actual and measured defect area, no significance was noted between imaging modalities (10% defect P = .34, 25% defect P = .47). The error of 3-T 3D MRI increased with increasing defect size (P = .02). Both 1.5- and 3-T-based 3D MRI reconstructions of glenoid bone loss correlate with measurements from 3D CT scan data and actual defect size in a cadaveric model. Regardless of imaging modality, the error in bone loss measurement tends to increase with increased defect size. Use of 3D MRI in the setting of shoulder instability could obviate the need for CT scans. The goal of our work was to develop a reproducible method of determining glenoid bone loss from 3D MRI data and hence eliminate the need for CT scans in this setting. This will lead to decreased cost of care as well as decreased radiation exposure to patients. The long-term goal is a fully automated system that is as approachable for clinicians as current 3D CT technology. Copyright © 2016 Arthroscopy Association of North America. Published by Elsevier Inc. All rights reserved.

Electron mobility enhancement in ZnO thin films via surface modification by carboxylic acids

NASA Astrophysics Data System (ADS)

Spalenka, Josef W.; Gopalan, Padma; Katz, Howard E.; Evans, Paul G.

2013-01-01

Modifying the surface of polycrystalline ZnO films using a monolayer of organic molecules with carboxylic acid attachment groups increases the field-effect electron mobility and zero-bias conductivity, resulting in improved transistors and transparent conductors. The improvement is consistent with the passivation of defects via covalent bonding of the carboxylic acid and is reversible by exposure to a UV-ozone lamp. The properties of the solvent used for the attachment are crucial because solvents with high acid dissociation constants (Ka) for carboxylic acids lead to high proton activities and etching of the nanometers-thick ZnO films, masking the electronic effect.

Calibration of a Modified Andersen Bacterial Aerosol Sampler

PubMed Central

May, K. R.

1964-01-01

A study of the flow regime in the commercial Andersen sampler revealed defects in the sampling of the larger airborne particles. Satisfactory sampling was obtained by redesigning the hole pattern of the top stages and adding one more stage to extend the range of the instrument. A new, rational hole pattern is suggested for the lower stages. With both patterns a special colony-counting mask can be used to facilitate the assay. A calibration of the modified system is presented which enables particle size distribution curves to be drawn from the colony counts. Images FIG. 2 FIG. 3 FIG. 4 FIG. 5 FIG. 6 FIG. 7 FIG. 8 PMID:14106938

Ripple-aware optical proximity correction fragmentation for back-end-of-line designs

NASA Astrophysics Data System (ADS)

Wang, Jingyu; Wilkinson, William

2018-01-01

Accurate characterization of image rippling is critical in early detection of back-end-of-line (BEOL) patterning weakpoints, as most defects are strongly associated with excessive rippling that does not get effectively compensated by optical proximity correction (OPC). We correlate image contour with design shapes to account for design geometry-dependent rippling signature, and explore the best practice of OPC fragmentation for BEOL geometries. Specifically, we predict the optimum contour as allowed by the lithographic process and illumination conditions and locate ripple peaks, valleys, and inflection points. This allows us to identify potential process weakpoints and segment the mask accordingly to achieve the best correction results.

Dental enamel defects in German medieval and early-modern-age populations.

PubMed

Lang, J; Birkenbeil, S; Bock, S; Heinrich-Weltzien, R; Kromeyer-Hauschild, K

2016-11-01

Aim of this study was to investigate the frequency and type of developmental defects of enamel (DDE) in a medieval and an early-modern-age population from Thuringia, Germany. Sixty-six skeletons subdivided into 31 single burials (12 th /13 th c.) and 35 individuals buried in groups (15 th /16 th c.) were examined. DDE were classified on 1,246 teeth according to the DDE index. Molar-incisor-hypomineralisation (MIH), a special type of DDE, was recorded according to the European Academy of Paediatric Dentistry (EAPD) criteria. DDE was found in 89.4% of the individuals (single burials 90.3% and group burials 88.6%). Hypoplastic pits were the most frequent defect in primary teeth and linear enamel hypoplasia (LEH) in permanent teeth. 13 individuals (24.1%) showed at least one hypomineralised permanent tooth, 12.2% had MIH on at least one first permanent molar and 10.0% in permanent incisors. Second primary molars were affected in 8.0% of the children and juveniles. No individual suffered from affected molars and incisors in combination. Endogenous factors like nutritional deficiencies and health problems in early childhood could have been aetiological reasons of DDE and MIH. The frequency of DDE and MIH might have been masked by extended carious lesions, dental wear and ante-mortem tooth loss.

Vertical ridge augmentation using an equine bone and collagen block infused with recombinant human platelet-derived growth factor-BB: a randomized single-masked histologic study in non-human primates.

PubMed

Nevins, Myron; Al Hezaimi, Khalid; Schupbach, Peter; Karimbux, Nadeem; Kim, David M

2012-07-01

This study tests the effectiveness of hydroxyapatite and collagen bone blocks of equine origin (eHAC), infused with recombinant human platelet-derived growth factor-BB (rhPDGF-BB), to augment localized posterior mandibular defects in non-human primates (Papio hamadryas). Bilateral critical-sized defects simulating severe atrophy were created at the time of the posterior teeth extraction. Test and control blocks (without growth factor) were randomly grafted into the respective sites in each non-human primate. All sites exhibited vertical ridge augmentation, with physiologic hard- and soft-tissue integration of the blocks when clinical and histologic examinations were done at 4 months after the vertical ridge augmentation procedure. There was a clear, although non-significant, tendency to increased regeneration in the test sites. As in the first two preclinical studies in this series using canines, experimental eHAC blocks infused with rhPDGF-BB proved to be a predictable and technically viable method to predictably regenerate bone and soft tissue in critical-sized defects. This investigation supplies additional evidence that eHAC blocks infused with rhPDGF-BB growth factor is a predictable and technically feasible option for vertical augmentation of severely resorbed ridges.

What to Do if a Compact Fluorescent Light (CFL) Bulb or Fluorescent Tube Light Bulb Breaks: Printable Instructions

EPA Pesticide Factsheets

The broken bulb can continue to release mercury vapor until it is cleaned up and removed. This cleanup guidance represents minimum recommended actions to reduce mercury exposure, and will be updated as more efficient practices are identified.

NREL: Renewable Resource Data Center - Solar Resource Publications

Science.gov Websites

Publications The following links provide useful information about solar resource tools and data resources, solar data, or solar technology". Resource Assessment and Forecasting Group Publications By | 1985 | 1984 | 1983 | 1982 | 1981 | 1980 Miscellaneous Printable Version RReDC Home Biomass Resource

Genetics Home Reference: COL4A1-related brain small-vessel disease

MedlinePlus

... COL4A1-related brain small-vessel disease COL4A1-related brain small-vessel disease Printable PDF Open All Close ... view the expand/collapse boxes. Description COL4A1 -related brain small-vessel disease is part of a group ...

Advanced plasma etch technologies for nanopatterning

NASA Astrophysics Data System (ADS)

Wise, Rich

2013-10-01

Advances in patterning techniques have enabled the extension of immersion lithography from 65/45 nm through 14/10 nm device technologies. A key to this increase in patterning capability has been innovation in the subsequent dry plasma etch processing steps. Multiple exposure techniques, such as litho-etch-litho-etch, sidewall image transfer, line/cut mask, and self-aligned structures, have been implemented to solution required device scaling. Advances in dry plasma etch process control across wafer uniformity and etch selectivity to both masking materials have enabled adoption of vertical devices and thin film scaling for increased device performance at a given pitch. Plasma etch processes, such as trilayer etches, aggressive critical dimension shrink techniques, and the extension of resist trim processes, have increased the attainable device dimensions at a given imaging capability. Precise control of the plasma etch parameters affecting across-design variation, defectivity, profile stability within wafer, within lot, and across tools has been successfully implemented to provide manufacturable patterning technology solutions. IBM has addressed these patterning challenges through an integrated total patterning solutions team to provide seamless and synergistic patterning processes to device and integration internal customers. We will discuss these challenges and the innovative plasma etch solutions pioneered by IBM and our alliance partners.

Advanced plasma etch technologies for nanopatterning

NASA Astrophysics Data System (ADS)

Wise, Rich

2012-03-01

Advances in patterning techniques have enabled the extension of immersion lithography from 65/45nm through 14/10nm device technologies. A key to this increase in patterning capability has been innovation in the subsequent dry plasma etch processing steps. Multiple exposure techniques such as litho-etch-litho-etch, sidewall image transfer, line/cut mask and self-aligned structures have been implemented to solution required device scaling. Advances in dry plasma etch process control, across wafer uniformity and etch selectivity to both masking materials and have enabled adoption of vertical devices and thin film scaling for increased device performance at a given pitch. Plasma etch processes such as trilayer etches, aggressive CD shrink techniques, and the extension of resist trim processes have increased the attainable device dimensions at a given imaging capability. Precise control of the plasma etch parameters affecting across design variation, defectivity, profile stability within wafer, within lot, and across tools have been successfully implemented to provide manufacturable patterning technology solutions. IBM has addressed these patterning challenges through an integrated Total Patterning Solutions team to provide seamless and synergistic patterning processes to device and integration internal customers. This paper will discuss these challenges and the innovative plasma etch solutions pioneered by IBM and our alliance partners.

Surface structure characterization of Aspergillus fumigatus conidia mutated in the melanin synthesis pathway and their human cellular immune response.

PubMed

Bayry, Jagadeesh; Beaussart, Audrey; Dufrêne, Yves F; Sharma, Meenu; Bansal, Kushagra; Kniemeyer, Olaf; Aimanianda, Vishukumar; Brakhage, Axel A; Kaveri, Srini V; Kwon-Chung, Kyung J; Latgé, Jean-Paul; Beauvais, Anne

2014-08-01

In Aspergillus fumigatus, the conidial surface contains dihydroxynaphthalene (DHN)-melanin. Six-clustered gene products have been identified that mediate sequential catalysis of DHN-melanin biosynthesis. Melanin thus produced is known to be a virulence factor, protecting the fungus from the host defense mechanisms. In the present study, individual deletion of the genes involved in the initial three steps of melanin biosynthesis resulted in an altered conidial surface with masked surface rodlet layer, leaky cell wall allowing the deposition of proteins on the cell surface and exposing the otherwise-masked cell wall polysaccharides at the surface. Melanin as such was immunologically inert; however, deletion mutant conidia with modified surfaces could activate human dendritic cells and the subsequent cytokine production in contrast to the wild-type conidia. Cell surface defects were rectified in the conidia mutated in downstream melanin biosynthetic pathway, and maximum immune inertness was observed upon synthesis of vermelone onward. These observations suggest that although melanin as such is an immunologically inert material, it confers virulence by facilitating proper formation of the A. fumigatus conidial surface. Copyright © 2014, American Society for Microbiology. All Rights Reserved.

Teaching UV-Vis Spectroscopy with a 3D-Printable Smartphone Spectrophotometer

ERIC Educational Resources Information Center

Grasse, Elise K.; Torcasio, Morgan H.; Smith, Adam W.

2016-01-01

Visible absorbance spectroscopy is a widely used tool in chemical, biochemical, and medical laboratories. The theory and methods of absorbance spectroscopy are typically introduced in upper division undergraduate chemistry courses, but could be introduced earlier with the right curriculum and instrumentation. A major challenge in teaching…

NREL: Renewable Resource Data Center - Biomass Resource Related Links

Science.gov Websites

Biomass Resource Related Links Comprehensive biomass resource information is also available from . Printable Version RReDC Home Biomass Resource Information Biomass Data Models & Tools Publications Related Links Geothermal Resource Information Solar Resource Information Wind Resource Information Did you

The Power in the Portal

ERIC Educational Resources Information Center

Chamberlain, Cathy

2005-01-01

Educational portals put together links to sites and resources educators would be interested in viewing. They eliminate the hours of searching that might be invested if typical search engines were used. Educational portals feature lessons, units, printable resources, creative ideas, and more. Many of these sites are free, while others are…

Alternative Fuels Data Center: Alternative Fueling Station Locator

Science.gov Websites

Locate Stations Printable Version Share this resource Send a link to Alternative Fuels Data Center : Alternative Fueling Station Locator to someone by E-mail Share Alternative Fuels Data Center: Alternative Fuels Data Center: Alternative Fueling Station Locator on Digg Find More places to share Alternative

Alternative Fuels Data Center: Hydrogen Fueling Station Locations

Science.gov Websites

Hydrogen Printable Version Share this resource Send a link to Alternative Fuels Data Center : Hydrogen Fueling Station Locations to someone by E-mail Share Alternative Fuels Data Center: Hydrogen Fuels Data Center: Hydrogen Fueling Station Locations on Digg Find More places to share Alternative

3D-printed transparent facemasks in the treatment of facial hypertrophic scars of young children with burns.

PubMed

Wei, Yating; Li-Tsang, Cecilia W P; Liu, Jun; Xie, Lihua; Yue, Shukai

2017-05-01

Facial burns could create serious scar problems resulting disfigurement particularly on children. The conventional methods of producing transparent face masks for scar control remains complex and require dexterous skills of experienced clinician and patients' compliance during fitting. In this study, we adopted a portable 3D scanning and Computer-Aided Design (CAD) to produce 3D-printed transparent facemasks. Its efficacy was tested on two children with facial burns resulting hypertrophic scars. This study adopted a longitudinal case follow up research design. Two children with facial burns were recruited in the study upon consent. Their facial features were scanned with a portable 3D scanner and then edited and converted to the target files: the customized printable facemask files. The transparent facemask was directly printed out on the transparent biocompatible material followed by adding the medical grade silicone gel to provide extra pressure on the scar site. The facemasks were fitted to the patients with elastic straps connecting the printed anchoring bolts. Both children and family were instructed to wear the facemask for at least 20h per day and they were assessed before treatment, one month and three months after treatment on the facial scar conditions. At the one-month and three-month assessments after treatment, a decrease in average scar thickness was shown and the facial appearance was satisfactory. The 3D-printed facemasks were well fitted on both patients. The treatment was well-tolerated and no complication was reported. 3D-printed transparent facemask is convenient and efficient to fabricate, and is suitable for treating pediatric facial hypertrophic scars after burn. Copyright © 2016 Elsevier Ltd and ISBI. All rights reserved.

Anomalous origin of the left coronary artery from the pulmonary artery with patent ductus arteriosus: a must to recognize entity.

PubMed

Awasthy, Neeraj; Marwah, Ashutosh; Sharma, Rajesh; Dalvi, Bharat

2010-09-01

Anomalous left coronary artery from the pulmonary trunk (ALCAPA) presents in early infancy with a clinical picture of congestive heart failure with left ventricular (LV) dysfunction and mitral insufficiency. These manifestations of myocardial ischaemia may be masked in the presence of an associated patent ductus arteriosus (PDA) or ventricular septal defect (VSD) which prevents the fall of pulmonary artery pressures and allows perfusion of the anomalous coronary artery. We present a case of a patient with large PDA-associated ALCAPA and preserved LV function. The importance of such a finding lies in the fact that VSD closure or PDA ligation in such cases would unmask the ALCAPA.

Results from prototype die-to-database reticle inspection system

NASA Astrophysics Data System (ADS)

Mu, Bo; Dayal, Aditya; Broadbent, Bill; Lim, Phillip; Goonesekera, Arosha; Chen, Chunlin; Yeung, Kevin; Pinto, Becky

2009-03-01

A prototype die-to-database high-resolution reticle defect inspection system has been developed for 32nm and below logic reticles, and 4X Half Pitch (HP) production and 3X HP development memory reticles. These nodes will use predominantly 193nm immersion lithography (with some layers double patterned), although EUV may also be used. Many different reticle types may be used for these generations including: binary (COG, EAPSM), simple tritone, complex tritone, high transmission, dark field alternating (APSM), mask enhancer, CPL, and EUV. Finally, aggressive model based OPC is typically used, which includes many small structures such as jogs, serifs, and SRAF (sub-resolution assist features), accompanied by very small gaps between adjacent structures. The architecture and performance of the prototype inspection system is described. This system is designed to inspect the aforementioned reticle types in die-todatabase mode. Die-to-database inspection results are shown on standard programmed defect test reticles, as well as advanced 32nm logic, and 4X HP and 3X HP memory reticles from industry sources. Direct comparisons with currentgeneration inspection systems show measurable sensitivity improvement and a reduction in false detections.

Quo Vadis, Medical Genetics?

NASA Astrophysics Data System (ADS)

Czeizel, Andrew E.

The beginning of human genetics and its medical part: medical genetics was promising in the early decades of this century. Many genetic diseases and defects with Mendelian origin were identified and it helped families with significant genetic burden to limit their child number. Unfortunately this good start was shadowed by two tragic events. On the one hand, in the 1930s and early 1940s the German fascism brought about the dominance of an unscientific eugenics to mask vile political crimes. People with genetic diseases-defects were forced to sterilisation and several of them were killed. On the other hand, in the 1950s lysenkoism inhibitied the evolution of genetics in the Soviet Union and their satelite countries. Lysenko's doctrine declared genetics as a product of imperialism and a guilty science, therefore leading geneticists were ousted form their posts and some of them were executed or put in prison. Past decades genetics has resulted fantastic new results and achieved a leading position within the natural sciences. To my mind, however, the expected wider use of new eugenics indicates a new tragedy and this Cassandra's prediction is the topic of this presentation.

Alternative Fuels Data Center: Truck Stop Electrification Site Data

Science.gov Websites

Collection Methods Tools Printable Version Share this resource Send a link to Alternative Fuels Data Center: Truck Stop Electrification Site Data Collection Methods to someone by E-mail Share Alternative Fuels Data Center: Truck Stop Electrification Site Data Collection Methods on Facebook Tweet about

Dual-Extrusion 3D Printing of Anatomical Models for Education

ERIC Educational Resources Information Center

Smith, Michelle L.; Jones, James F. X.

2018-01-01

Two material 3D printing is becoming increasingly popular, inexpensive and accessible. In this paper, freely available printable files and dual extrusion fused deposition modelling were combined to create a number of functional anatomical models. To represent muscle and bone FilaFlex[superscript 3D] flexible filament and polylactic acid (PLA)…

Printable Biodegradable Hydrogel for Skin Wound Dressing Using Inkjet Printing Technology

ERIC Educational Resources Information Center

Yanez, Maria

2013-01-01

Chronic wounds are becoming more frequent. Foot ulcers affect approximately 10%-15% of patients with diabetes throughout their lifetimes, and by 2025, it is estimated the prevalence of diabetes will be 250 million people in the worldwide. There is increased potential for patients with peripheral neuropathy and peripheral vascular disease to suffer…

Alternative Fuels Data Center: Ethanol Laws and Incentives

Science.gov Websites

Ethanol Printable Version Share this resource Send a link to Alternative Fuels Data Center: Ethanol Laws and Incentives to someone by E-mail Share Alternative Fuels Data Center: Ethanol Laws and Incentives on Facebook Tweet about Alternative Fuels Data Center: Ethanol Laws and Incentives on Twitter

Engineering Design Graphics: Into the 21st Century

ERIC Educational Resources Information Center

Harris, La Verne Abe; Meyers, Frederick

2007-01-01

Graphical plans for construction of machinery and architecture have evolved over the last 6,000 years beginning from hieroglyphics to drawings on printable media, from the "Golden Age" of engineering graphics to the innovation of computer graphics and prototyping. The evolution of engineering design graphics as a profession has also evolved. Years…

Alternative Fuels Data Center: Electricity Laws and Incentives

Science.gov Websites

Electricity Printable Version Share this resource Send a link to Alternative Fuels Data Center : Electricity Laws and Incentives to someone by E-mail Share Alternative Fuels Data Center: Electricity Laws and Incentives on Facebook Tweet about Alternative Fuels Data Center: Electricity Laws and Incentives on Twitter

OP-AMPS on Flexible Substrates with Printable Materials

DTIC Science & Technology

2011-08-10

Zinc Tin Oxide Thin - Film - Transistor Enhancement...II196, 2010. [3] D. Geng, D. H. Kang, and J. Jang, "High-Performance Amorphous Indium-Gallium- Zinc - Oxide Thin - Film Transistor With a Self-Aligned...B., Dodabalapur, A., “Band transport and mobility edge in amorphous solution-processed zinc tin oxide thin - film transistors ”, Applied

Alternative Fuels Data Center: Vehicle Search

Science.gov Websites

Tools » Vehicle Search Printable Version Share this resource Send a link to Alternative Fuels Data Center: Vehicle Search to someone by E-mail Share Alternative Fuels Data Center: Vehicle Search on Facebook Tweet about Alternative Fuels Data Center: Vehicle Search on Twitter Bookmark Alternative Fuels

Alternative Fuels Data Center: Biodiesel Laws and Incentives

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Alternative Fuels Data Center

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Alternative Fuels Data Center: Forgot Your Password?

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Alternative Fuels Data Center: Propane Laws and Incentives

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Alternative Fuels Data Center: Hydrogen Laws and Incentives

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Alternative Fuels Data Center: Idle Reduction Laws and Incentives

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Alternative Fuels Data Center: State Laws and Incentives

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Application of Extrusion-Based Hydrogel Bioprinting for Cartilage Tissue Engineering

PubMed Central

You, Fu; Eames, B. Frank; Chen, Xiongbiao

2017-01-01

Extrusion-based bioprinting (EBB) is a rapidly developing technique that has made substantial progress in the fabrication of constructs for cartilage tissue engineering (CTE) over the past decade. With this technique, cell-laden hydrogels or bio-inks have been extruded onto printing stages, layer-by-layer, to form three-dimensional (3D) constructs with varying sizes, shapes, and resolutions. This paper reviews the cell sources and hydrogels that can be used for bio-ink formulations in CTE application. Additionally, this paper discusses the important properties of bio-inks to be applied in the EBB technique, including biocompatibility, printability, as well as mechanical properties. The printability of a bio-ink is associated with the formation of first layer, ink rheological properties, and crosslinking mechanisms. Further, this paper discusses two bioprinting approaches to build up cartilage constructs, i.e., self-supporting hydrogel bioprinting and hybrid bioprinting, along with their applications in fabricating chondral, osteochondral, and zonally organized cartilage regenerative constructs. Lastly, current limitations and future opportunities of EBB in printing cartilage regenerative constructs are reviewed. PMID:28737701

100 °C Thermal Stability of Printable Perovskite Solar Cells Using Porous Carbon Counter Electrodes.

PubMed

Baranwal, Ajay K; Kanaya, Shusaku; Peiris, T A Nirmal; Mizuta, Gai; Nishina, Tomoya; Kanda, Hiroyuki; Miyasaka, Tsutomu; Segawa, Hiroshi; Ito, Seigo

2016-09-22

Many efforts have been made towards improving perovskite (PVK) solar cell stability, but their thermal stability, particularly at 85 °C (IEC 61646 climate chamber tests), remains a challenge. Outdoors, the installed solar cell temperature can reach up to 85 °C, especially in desert regions, providing sufficient motivation to study the effect of temperature stress at or above this temperature (e.g., 100 °C) to confirm the commercial viability of PVK solar cells for industrial companies. In this work, a three-layer printable HTM-free CH 3 NH 3 PbI 3 PVK solar cell with a mesoporous carbon back contact and UV-curable sealant was fabricated and tested for thermal stability over 1500 h at 100 °C. Interestingly, the position of the UV-curing glue was found to drastically affect the device stability. The side-sealed cells show high PCE stability and represent a large step toward commercialization of next generation organic-inorganic lead halide PVK solar cells. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Printable Electrochemical Biosensors: A Focus on Screen-Printed Electrodes and Their Application

PubMed Central

Yamanaka, Keiichiro; Vestergaard, Mun’delanji C.; Tamiya, Eiichi

2016-01-01

In this review we present electrochemical biosensor developments, focusing on screen-printed electrodes (SPEs) and their applications. In particular, we discuss how SPEs enable simple integration, and the portability needed for on-field applications. First, we briefly discuss the general concept of biosensors and quickly move on to electrochemical biosensors. Drawing from research undertaken in this area, we cover the development of electrochemical DNA biosensors in great detail. Through specific examples, we describe the fabrication and surface modification of printed electrodes for sensitive and selective detection of targeted DNA sequences, as well as integration with reverse transcription-polymerase chain reaction (RT-PCR). For a more rounded approach, we also touch on electrochemical immunosensors and enzyme-based biosensors. Last, we present some electrochemical devices specifically developed for use with SPEs, including USB-powered compact mini potentiostat. The coupling demonstrates the practical use of printable electrode technologies for application at point-of-use. Although tremendous advances have indeed been made in this area, a few challenges remain. One of the main challenges is application of these technologies for on-field analysis, which involves complicated sample matrices. PMID:27775661

Bioinspired Multifunctional Superhydrophobic Surfaces with Carbon-Nanotube-Based Conducting Pastes by Facile and Scalable Printing.

PubMed

Han, Joong Tark; Kim, Byung Kuk; Woo, Jong Seok; Jang, Jeong In; Cho, Joon Young; Jeong, Hee Jin; Jeong, Seung Yol; Seo, Seon Hee; Lee, Geon-Woong

2017-03-01

Directly printed superhydrophobic surfaces containing conducting nanomaterials can be used for a wide range of applications in terms of nonwetting, anisotropic wetting, and electrical conductivity. Here, we demonstrated that direct-printable and flexible superhydrophobic surfaces were fabricated on flexible substrates via with an ultrafacile and scalable screen printing with carbon nanotube (CNT)-based conducting pastes. A polydimethylsiloxane (PDMS)-polyethylene glycol (PEG) copolymer was used as an additive for conducting pastes to realize the printability of the conducting paste as well as the hydrophobicity of the printed surface. The screen-printed conducting surfaces showed a high water contact angle (WCA) (>150°) and low contact angle hysteresis (WCA < 5°) at 25 wt % PDMS-PEG copolymer in the paste, and they have an electrical conductivity of over 1000 S m -1 . Patterned superhydrophobic surfaces also showed sticky superhydrophobic characteristics and were used to transport water droplets. Moreover, fabricated films on metal meshes were used for an oil/water separation filter, and liquid evaporation behavior was investigated on the superhydrophobic and conductive thin-film heaters by applying direct current voltage to the film.

Geologic map of the Basque-Cantabrian Basin and a new tectonic interpretation of the Basque Arc

NASA Astrophysics Data System (ADS)

Ábalos, B.

2016-11-01

A new printable 1/200.000 bedrock geological map of the onshore Basque-Cantabrian Basin is presented, aimed to contribute to future geologic developments in the central segment of the Pyrenean-Cantabrian Alpine orogenic system. It is accompanied in separate appendixes by a historic report on the precedent geological maps and by a compilation above 350 bibliographic citations of maps and academic reports (usually overlooked or ignored) that are central to this contribution. Structural scrutiny of the map permits to propose a new tectonic interpretation of the Basque Arc, implementing previously published partial reconstructions. It is presented as a printable 1/400.000 tectonic map. The Basque Arc consists of various thrust slices that can expose at the surface basement rocks (Palaeozoic to Lower Triassic) and their sedimentary cover (uppermost Triassic to Tertiary), from which they are detached by intervening (Upper Triassic) evaporites and associated rocks. The slice-bounding thrusts are in most cases reactivated normal faults active during Meso-Cenozoic sedimentation that can be readily related to basement discontinuities generated during the Hercynian orogeny.

Fluoropolymer based composite with Ag particles as 3D printable conductive ink for stretchable electronics

NASA Astrophysics Data System (ADS)

Kumar, Amit; La, Thanh Giang; Li, Xinda; Chung, Hyun Joong

The recent development of stretchable electronics expands the scope of wearable and healthcare applications. This creates a high demand in stretchy conductor that can maintain conductivity at high strain conditions. Here, we describe a simple fabrication pathway to achieve stretchable, 3D-printable and low-cost conductive composite ink. The ink is used to print complex stretchable patterns with high conductivity. The elastic ink is composed of silver(Ag) flakes, fluorine rubber, an organic solvent and surfactant. The surfactant plays multiple roles in in the composite. The surfactant promotes compatibility between silver flakes and fluorine rubber; at the same time, it affects the mechanical properties of the hosting fluoropolymers and adhesion properties of the composite. Based on experimental observations, we discuss the exact role of the surfactant in the composite. The resulting composite exhibits high conductivity value of 8.49 *10 4 S/m along with high reliability against repeated stretching/releasing cycles. Interesting examples of transfer printing of the printed ink and its applications in working devices, such as RFID tag and antennas, are also showcased.

Defect reduction in overgrown semi-polar (11-22) GaN on a regularly arrayed micro-rod array template

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Y.; Bai, J.; Hou, Y.

2016-02-15

We demonstrate a great improvement in the crystal quality of our semi-polar (11-22) GaN overgrown on regularly arrayed micro-rod templates fabricated using a combination of industry-matched photolithography and dry-etching techniques. As a result of our micro-rod configuration specially designed, an intrinsic issue on the anisotropic growth rate which is a great challenge in conventional overgrowth technique for semi-polar GaN has been resolved. Transmission electron microscopy measurements show a different mechanism of defect reduction from conventional overgrowth techniques and also demonstrate major advantages of our approach. The dislocations existing in the GaN micro-rods are effectively blocked by both a SiO{sub 2}more » mask on the top of each GaN micro-rod and lateral growth along the c-direction, where the growth rate along the c-direction is faster than that along any other direction. Basal stacking faults (BSFs) are also effectively impeded, leading to a distribution of BSF-free regions periodically spaced by BSF regions along the [-1-123] direction, in which high and low BSF density areas further show a periodic distribution along the [1-100] direction. Furthermore, a defect reduction model is proposed for further improvement in the crystalline quality of overgrown (11-22) GaN on sapphire.« less

Qualification of local advanced cryogenic cleaning technology for 14nm photomask fabrication

NASA Astrophysics Data System (ADS)

Taumer, Ralf; Krome, Thorsten; Bowers, Chuck; Varghese, Ivin; Hopkins, Tyler; White, Roy; Brunner, Martin; Yi, Daniel

2014-10-01

The march toward tighter design rules, and thus smaller defects, implies stronger surface adhesion between defects and the photomask surface compared to past generations, thereby resulting in increased difficulty in photomask cleaning. Current state-of-the-art wet clean technologies utilize functional water and various energies in an attempt to produce similar yield to the acid cleans of previous generations, but without some of the negative side effects. Still, wet cleans have continued to be plagued with issues such as persistent particles and contaminations, SRAF and feature damages, leaving contaminants behind that accelerate photo-induced defect growth, and others. This paper details work done through a design of experiments (DOE) utilized to qualify an improved cryogenic cleaning technology for production in the Advanced Mask Technology Center (AMTC) advanced production lines for 20 and 14 nm processing. All work was conducted at the AMTC facility in Dresden, Germany utilizing technology developed by Eco-Snow Systems and RAVE LLC for their cryogenic local cleaning VC1200F platform. This system uses a newly designed nozzle, improved gaseous CO2 delivery, extensive filtration to remove hydrocarbons and minimize particle adders, and other process improvements to overcome the limitations of the previous generation local cleaning tool. AMTC has successfully qualified this cryogenic cleaning technology and is currently using it regularly to enhance production yields even at the most challenging technology nodes.

Challenges in process marginality for advanced technology nodes and tackling its contributors

NASA Astrophysics Data System (ADS)

Narayana Samy, Aravind; Schiwon, Roberto; Seltmann, Rolf; Kahlenberg, Frank; Katakamsetty, Ushasree

2013-10-01

Process margin is getting critical in the present node shrinkage scenario due to the physical limits reached (Rayleigh's criterion) using ArF lithography tools. K1 is used to its best for better resolution and to enhance the process margin (28nm metal patterning k1=0.31). In this paper, we would like to give an overview of various contributors in the advanced technology nodes which limit the process margins and how the challenges have been tackled in a modern foundry model. Advanced OPC algorithms are used to make the design content at the mask optimum for patterning. However, as we work at the physical limit, critical features (Hot-spots) are very susceptible to litho process variations. Furthermore, etch can have a significant impact as well. Pattern that still looks healthy at litho can fail due to etch interactions. This makes the traditional 2D contour output from ORC tools not able to predict accurately all defects and hence not able to fully correct it in the early mask tapeout phase. The above makes a huge difference in the fast ramp-up and high yield in a competitive foundry market. We will explain in this paper how the early introduction of 3D resist model based simulation of resist profiles (resist top-loss, bottom bridging, top-rounding, etc.,) helped in our prediction and correction of hot-spots in the early 28nm process development phase. The paper also discusses about the other overall process window reduction contributors due to mask 3D effects, wafer topography (focus shifts/variations) and how this has been addressed with different simulation efforts in a fast and timely manner.

Variations in backward masking with different masking stimuli: II. The effects of spatially quantised masks in the light of local contour interaction, interchannel inhibition, perceptual retouch, and substitution theories.

PubMed

Bachmann, Talis; Luiga, Iiris; Põder, Endel

2005-01-01

In part I we showed that with spatially non-overlapping targets and masks both local metacontrast-like interactions and attentional processes are involved in backward masking. In this second part we extend the strategy of varying the contents of masks to pattern masking where targets and masks overlap in space, in order to compare different masking theories. Images of human faces were backward-masked by three types of spatially quantised masks (the same faces as targets, faces different from targets, and Gaussian noise with power spectra typical for faces). Configural characteristics, rather than the spectral content of the mask, predicted the extent of masking at relatively long stimulus onset asynchronies (SOAs). This poses difficulties for the theory of transient-on-sustained inhibition as the principal mechanism of masking and also for local contour interaction being a decisive factor in pattern masking. The scale of quantisation had no effect on the masking capacity of noise masks and a strong effect on the capacity of different-face masks. Also, the decrease of configural masking with an increase in the coarseness of the quantisation of the mask highlights ambiguities inherent in the re-entrance-based substitution theory of masking. Different masking theories cannot solve the problems of masking separately. They should be combined in order to create a complex, yet comprehensible mode of interaction for the different mechanisms involved in visual backward masking.

In HepG2 Cells, Coexisting Carnitine Deficiency Masks Important Indicators of Marginal Biotin Deficiency123

PubMed Central

Bogusiewicz, Anna; Boysen, Gunnar; Mock, Donald M

2015-01-01

Background: A large number of birth defects are related to nutrient deficiencies; concern that biotin deficiency is teratogenic in humans is reasonable. Surprisingly, studies indicate that increased urinary 3-hydroxyisovalerylcarnitine (3HIAc), a previously validated marker of biotin deficiency, is not a valid biomarker in pregnancy. Objective: In this study we hypothesized that coexisting carnitine deficiency can prevent the increase in 3HIAc due to biotin deficiency. Methods: We used a 2-factor nutrient depletion design to induce isolated and combined biotin and carnitine deficiency in HepG2 cells and then repleted cells with carnitine. To elucidate the metabolic pathogenesis, we quantitated intracellular and extracellular free carnitine, acylcarnitines, and acylcarnitine ratios using liquid chromatography–tandem mass spectrometry. Results: Relative to biotin-sufficient, carnitine-sufficient cells, intracellular acetylcarnitine increased by 90%, propionylcarnitine more than doubled, and 3HIAc increased by >10-fold in biotin-deficient, carnitine-sufficient (BDCS) cells, consistent with a defensive mechanism in which biotin-deficient cells transesterify the acyl-coenzyme A (acyl-CoA) substrates of the biotin-dependent carboxylases to the related acylcarnitines. Likewise, in BDCS cells, the ratio of acetylcarnitine to malonylcarnitine and the ratio of propionylcarnitine to methylmalonylcarnitine both more than tripled, and the ratio of 3HIAc to 3-methylglutarylcarnitine (MGc) increased by >10-fold. In biotin-deficient, carnitine-deficient (BDCD) cells, the 3 substrate-derived acylcarnitines changed little, but the substrate:product ratios were masked to a lesser extent. Moreover, carnitine repletion unmasked biotin deficiency in BDCD cells as shown by increases in acetylcarnitine, propionylcarnitine, and 3HIAc (each increased by >50-fold). Likewise, ratios of acetylcarnitine:malonylcarnitine, propionylcarnitine:methylmalonylcarnitine, and 3HIAc:MGc all increased by >8-fold. Conclusions: Our findings provide strong evidence that coexisting carnitine deficiency masks some indicators of biotin deficiency and support the potential importance of the ratios of acylcarnitines arising from the acyl-CoA substrates and products for biotin-dependent carboxylases in detecting the biotin deficiency that is masked by coexisting carnitine deficiency. PMID:25527659

In HepG2 cells, coexisting carnitine deficiency masks important indicators of marginal biotin deficiency.

PubMed

Bogusiewicz, Anna; Boysen, Gunnar; Mock, Donald M

2015-01-01

A large number of birth defects are related to nutrient deficiencies; concern that biotin deficiency is teratogenic in humans is reasonable. Surprisingly, studies indicate that increased urinary 3-hydroxyisovalerylcarnitine (3HIAc), a previously validated marker of biotin deficiency, is not a valid biomarker in pregnancy. In this study we hypothesized that coexisting carnitine deficiency can prevent the increase in 3HIAc due to biotin deficiency. We used a 2-factor nutrient depletion design to induce isolated and combined biotin and carnitine deficiency in HepG2 cells and then repleted cells with carnitine. To elucidate the metabolic pathogenesis, we quantitated intracellular and extracellular free carnitine, acylcarnitines, and acylcarnitine ratios using liquid chromatography-tandem mass spectrometry. Relative to biotin-sufficient, carnitine-sufficient cells, intracellular acetylcarnitine increased by 90%, propionylcarnitine more than doubled, and 3HIAc increased by >10-fold in biotin-deficient, carnitine-sufficient (BDCS) cells, consistent with a defensive mechanism in which biotin-deficient cells transesterify the acyl-coenzyme A (acyl-CoA) substrates of the biotin-dependent carboxylases to the related acylcarnitines. Likewise, in BDCS cells, the ratio of acetylcarnitine to malonylcarnitine and the ratio of propionylcarnitine to methylmalonylcarnitine both more than tripled, and the ratio of 3HIAc to 3-methylglutarylcarnitine (MGc) increased by >10-fold. In biotin-deficient, carnitine-deficient (BDCD) cells, the 3 substrate-derived acylcarnitines changed little, but the substrate:product ratios were masked to a lesser extent. Moreover, carnitine repletion unmasked biotin deficiency in BDCD cells as shown by increases in acetylcarnitine, propionylcarnitine, and 3HIAc (each increased by >50-fold). Likewise, ratios of acetylcarnitine:malonylcarnitine, propionylcarnitine:methylmalonylcarnitine, and 3HIAc:MGc all increased by >8-fold. Our findings provide strong evidence that coexisting carnitine deficiency masks some indicators of biotin deficiency and support the potential importance of the ratios of acylcarnitines arising from the acyl-CoA substrates and products for biotin-dependent carboxylases in detecting the biotin deficiency that is masked by coexisting carnitine deficiency. © 2015 American Society for Nutrition.

Minerals in our environment

USGS Publications Warehouse

Weathers, Judy; Galloway, John; Frank, Dave

2000-01-01

Minerals are found everywhere in our daily lives. This poster depicts numerous items found throughout a home, and the mineral(s) or mineral resources used in the ingredients of, or construction/manufacturing of those items. Designed for K-8 Teachers this poster can be scaled and is printable at 36" x 60" and legible at 11" x 17" in size.

Alternative Fuels Data Center: Natural Gas Related Links

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, AGA provides services to member natural gas pipelines, marketers, gatherers, international gas Natural Gas Printable Version Share this resource Send a link to Alternative Fuels Data Center : Natural Gas Related Links to someone by E-mail Share Alternative Fuels Data Center: Natural Gas Related

Alternative Fuels Data Center: Natural Gas

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31 CFR 363.42 - How will my interest income be reported for tax purposes?

Code of Federal Regulations, 2010 CFR

2010-07-01

... TreasuryDirect § 363.42 How will my interest income be reported for tax purposes? When you open your TreasuryDirect ® account, you consent to receive the appropriate tax reporting forms by electronic means... printable form through your TreasuryDirect account. If you withdraw your consent to receive tax reporting...

The Use of Conductive Ink in Antenna Education and Design

ERIC Educational Resources Information Center

Addison, David W.

2017-01-01

Conductive ink from a printer allows for the fabrication of conductive material with tight tolerances without the cost and time of chemical etching. This paper explores the use of AGIC printable conductive ink on a paper substrate as design tool for antennas as well as classroom use in antenna education. The antenna designs satisfy the…

Alternative Fuels Data Center: Natural Gas Laws and Incentives

Science.gov Websites

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What's in a mask? Information masking with forward and backward visual masks.

PubMed

Davis, Chris; Kim, Jeesun

2011-10-01

Three experiments tested how the physical format and information content of forward and backward masks affected the extent of visual pattern masking. This involved using different types of forward and backward masks with target discrimination measured by percentage correct in the first experiment (with a fixed target duration) and by an adaptive threshold procedure in the last two. The rationale behind the manipulation of the content of the masks stemmed from masking theories emphasizing attentional and/or conceptual factors rather than visual ones. Experiment 1 used word masks and showed that masking was reduced (a masking reduction effect) when the forward and backward masks were the same word (although in different case) compared to when the masks were different words. Experiment 2 tested the extent to which a reduction in masking might occur due to the physical similarity between the forward and backward masks by comparing the effect of the same content of the masks in the same versus different case. The result showed a significant reduction in masking for same content masks but no significant effect of case. The last experiment examined whether the reduction in masking effect would be observed with nonword masks--that is, having no high-level representation. No reduction in masking was found from same compared to different nonword masks (Experiment 3). These results support the view that the conscious perception of a rapidly displayed target stimulus is in part determined by high-level perceptual/cognitive factors concerned with masking stimulus grouping and attention.