Automaticity of higher cognitive functions: neurophysiological evidence for unconscious syntactic processing of masked words.

PubMed

Jiménez-Ortega, Laura; García-Milla, Marcos; Fondevila, Sabela; Casado, Pilar; Hernández-Gutiérrez, David; Martín-Loeches, Manuel

2014-12-01

Models of language comprehension assume that syntactic processing is automatic, at least at early stages. However, the degree of automaticity of syntactic processing is still controversial. Evidence of automaticity is either indirect or has been observed for pairs of words, which might provide a poor syntactic context in comparison to sentences. The present study investigates the automaticity of syntactic processing using event-related brain potentials (ERPs) during sentence processing. To this end, masked adjectives that could either be syntactically correct or incorrect relative to a sentence being processed appeared just prior to the presentation of supraliminal adjectives. The latter could also be correct or incorrect. According to our data, subliminal gender agreement violations embedded in a sentence trigger an early anterior negativity-like modulation, whereas supraliminal gender agreement violations elicited a later anterior negativity. First-pass syntactic parsing thus appears to be unconsciously and automatically elicited. Interestingly, a P600-like modulation of short duration and early latency could also be observed for masked violations. In addition, masked violations also modulated the P600 component elicited by unmasked targets, probably reflecting that the mechanisms of revising a structural mismatch appear affected by subliminal information. According to our findings, both conscious and unconscious processes apparently contribute to syntactic processing. These results are discussed in line with most recent theories of automaticity and syntactic processing. Copyright © 2014 Elsevier B.V. All rights reserved.

Layout optimization of DRAM cells using rigorous simulation model for NTD

NASA Astrophysics Data System (ADS)

Jeon, Jinhyuck; Kim, Shinyoung; Park, Chanha; Yang, Hyunjo; Yim, Donggyu; Kuechler, Bernd; Zimmermann, Rainer; Muelders, Thomas; Klostermann, Ulrich; Schmoeller, Thomas; Do, Mun-hoe; Choi, Jung-Hoe

2014-03-01

DRAM chip space is mainly determined by the size of the memory cell array patterns which consist of periodic memory cell features and edges of the periodic array. Resolution Enhancement Techniques (RET) are used to optimize the periodic pattern process performance. Computational Lithography such as source mask optimization (SMO) to find the optimal off axis illumination and optical proximity correction (OPC) combined with model based SRAF placement are applied to print patterns on target. For 20nm Memory Cell optimization we see challenges that demand additional tool competence for layout optimization. The first challenge is a memory core pattern of brick-wall type with a k1 of 0.28, so it allows only two spectral beams to interfere. We will show how to analytically derive the only valid geometrically limited source. Another consequence of two-beam interference limitation is a "super stable" core pattern, with the advantage of high depth of focus (DoF) but also low sensitivity to proximity corrections or changes of contact aspect ratio. This makes an array edge correction very difficult. The edge can be the most critical pattern since it forms the transition from the very stable regime of periodic patterns to non-periodic periphery, so it combines the most critical pitch and highest susceptibility to defocus. Above challenge makes the layout correction to a complex optimization task demanding a layout optimization that finds a solution with optimal process stability taking into account DoF, exposure dose latitude (EL), mask error enhancement factor (MEEF) and mask manufacturability constraints. This can only be achieved by simultaneously considering all criteria while placing and sizing SRAFs and main mask features. The second challenge is the use of a negative tone development (NTD) type resist, which has a strong resist effect and is difficult to characterize experimentally due to negative resist profile taper angles that perturb CD at bottom characterization by scanning electron microscope (SEM) measurements. High resist impact and difficult model data acquisition demand for a simulation model that hat is capable of extrapolating reliably beyond its calibration dataset. We use rigorous simulation models to provide that predictive performance. We have discussed the need of a rigorous mask optimization process for DRAM contact cell layout yielding mask layouts that are optimal in process performance, mask manufacturability and accuracy. In this paper, we have shown the step by step process from analytical illumination source derivation, a NTD and application tailored model calibration to layout optimization such as OPC and SRAF placement. Finally the work has been verified with simulation and experimental results on wafer.

Electrophysiological signals associated with fluency of different levels of processing reveal multiple contributions to recognition memory.

PubMed

Li, Bingbing; Taylor, Jason R; Wang, Wei; Gao, Chuanji; Guo, Chunyan

2017-08-01

Processing fluency appears to influence recognition memory judgements, and the manipulation of fluency, if misattributed to an effect of prior exposure, can result in illusory memory. Although it is well established that fluency induced by masked repetition priming leads to increased familiarity, manipulations of conceptual fluency have produced conflicting results, variously affecting familiarity or recollection. Some recent studies have found that masked conceptual priming increases correct recollection (Taylor & Henson, 2012), and the magnitude of this behavioural effect correlates with analogous fMRI BOLD priming effects in brain regions associated with recollection (Taylor, Buratto, & Henson, 2013). However, the neural correlates and time-courses of masked repetition and conceptual priming were not compared directly in previous studies. The present study used event-related potentials (ERPs) to identify and compare the electrophysiological correlates of masked repetition and conceptual priming and investigate how they contribute to recognition memory. Behavioural results were consistent with previous studies: Repetition primes increased familiarity, whereas conceptual primes increased correct recollection. Masked repetition and conceptual priming also decreased the latency of late parietal component (LPC). Masked repetition priming was associated with an early P200 effect and a later parietal maximum N400 effect, whereas masked conceptual priming was only associated with a central-parietal maximum N400 effect. In addition, the topographic distributions of the N400 repetition priming and conceptual priming effects were different. These results suggest that fluency at different levels of processing is associated with different ERP components, and contributes differentially to subjective recognition memory experiences. Copyright © 2017 Elsevier Inc. All rights reserved.

Wafer hot spot identification through advanced photomask characterization techniques: part 2

NASA Astrophysics Data System (ADS)

Choi, Yohan; Green, Michael; Cho, Young; Ham, Young; Lin, Howard; Lan, Andy; Yang, Richer; Lung, Mike

2017-03-01

Historically, 1D metrics such as Mean to Target (MTT) and CD Uniformity (CDU) have been adequate for mask end users to evaluate and predict the mask impact on the wafer process. However, the wafer lithographer's process margin is shrinking at advanced nodes to a point that classical mask CD metrics are no longer adequate to gauge the mask contribution to wafer process error. For example, wafer CDU error at advanced nodes is impacted by mask factors such as 3-dimensional (3D) effects and mask pattern fidelity on sub-resolution assist features (SRAFs) used in Optical Proximity Correction (OPC) models of ever-increasing complexity. To overcome the limitation of 1D metrics, there are numerous on-going industry efforts to better define wafer-predictive metrics through both standard mask metrology and aerial CD methods. Even with these improvements, the industry continues to struggle to define useful correlative metrics that link the mask to final device performance. In part 1 of this work, we utilized advanced mask pattern characterization techniques to extract potential hot spots on the mask and link them, theoretically, to issues with final wafer performance. In this paper, part 2, we complete the work by verifying these techniques at wafer level. The test vehicle (TV) that was used for hot spot detection on the mask in part 1 will be used to expose wafers. The results will be used to verify the mask-level predictions. Finally, wafer performance with predicted and verified mask/wafer condition will be shown as the result of advanced mask characterization. The goal is to maximize mask end user yield through mask-wafer technology harmonization. This harmonization will provide the necessary feedback to determine optimum design, mask specifications, and mask-making conditions for optimal wafer process margin.

The automatic back-check mechanism of mask tooling database and automatic transmission of mask tooling data

NASA Astrophysics Data System (ADS)

Xu, Zhe; Peng, M. G.; Tu, Lin Hsin; Lee, Cedric; Lin, J. K.; Jan, Jian Feng; Yin, Alb; Wang, Pei

2006-10-01

Nowadays, most foundries have paid more and more attention in order to reduce the CD width. Although the lithography technologies have developed drastically, mask data accuracy is still a big challenge than before. Besides, mask (reticle) price also goes up drastically such that data accuracy needs more special treatments.We've developed a system called eFDMS to guarantee the mask data accuracy. EFDMS is developed to do the automatic back-check of mask tooling database and the data transmission of mask tooling. We integrate our own EFDMS systems to engage with the standard mask tooling system K2 so that the upriver and the downriver processes of the mask tooling main body K2 can perform smoothly and correctly with anticipation. The competition in IC marketplace is changing from high-tech process to lower-price gradually. How to control the reduction of the products' cost more plays a significant role in foundries. Before the violent competition's drawing nearer, we should prepare the cost task ahead of time.

Efficient analysis of three dimensional EUV mask induced imaging artifacts using the waveguide decomposition method

NASA Astrophysics Data System (ADS)

Shao, Feng; Evanschitzky, Peter; Fühner, Tim; Erdmann, Andreas

2009-10-01

This paper employs the Waveguide decomposition method as an efficient rigorous electromagnetic field (EMF) solver to investigate three dimensional mask-induced imaging artifacts in EUV lithography. The major mask diffraction induced imaging artifacts are first identified by applying the Zernike analysis of the mask nearfield spectrum of 2D lines/spaces. Three dimensional mask features like 22nm semidense/dense contacts/posts, isolated elbows and line-ends are then investigated in terms of lithographic results. After that, the 3D mask-induced imaging artifacts such as feature orientation dependent best focus shift, process window asymmetries, and other aberration-like phenomena are explored for the studied mask features. The simulation results can help lithographers to understand the reasons of EUV-specific imaging artifacts and to devise illumination and feature dependent strategies for their compensation in the optical proximity correction (OPC) for EUV masks. At last, an efficient approach using the Zernike analysis together with the Waveguide decomposition technique is proposed to characterize the impact of mask properties for the future OPC process.

A computational investigation of feedforward and feedback processing in metacontrast backward masking

PubMed Central

Silverstein, David N.

2015-01-01

In human perception studies, visual backward masking has been used to understand the temporal dynamics of subliminal vs. conscious perception. When a brief target stimulus is followed by a masking stimulus after a short interval of <100 ms, performance on the target is impaired when the target and mask are in close spatial proximity. While the psychophysical properties of backward masking have been studied extensively, there is still debate on the underlying cortical dynamics. One prevailing theory suggests that the impairment of target performance due to the mask is the result of lateral inhibition between the target and mask in feedforward processing. Another prevailing theory suggests that this impairment is due to the interruption of feedback processing of the target by the mask. This computational study demonstrates that both aspects of these theories may be correct. Using a biophysical model of V1 and V2, visual processing was modeled as interacting neocortical attractors, which must propagate up the visual stream. If an activating target attractor in V1 is quiesced enough with lateral inhibition from a mask, or not reinforced by recurrent feedback, it is more likely to burn out before becoming fully active and progressing through V2 and beyond. Results are presented which simulate metacontrast backward masking with an increasing stimulus interval and with the presence and absence of feedback activity. This showed that recurrent feedback diminishes backward masking effects and can make conscious perception more likely. One model configuration presented a metacontrast noise mask in the same hypercolumns as the target, and produced type-A masking. A second model configuration presented a target line with two parallel adjacent masking lines, and produced type-B masking. Future work should examine how the model extends to more complex spatial mask configurations. PMID:25759672

Cloud Motion in the GOCI COMS Ocean Colour Data

NASA Technical Reports Server (NTRS)

Robinson, Wayne D.; Franz, Bryan A.; Mannino, Antonio; Ahn, Jae-Hyun

2016-01-01

The Geostationary Ocean Colour Imager (GOCI) instrument, on Koreas Communications, Oceans, and Meteorological Satellite (COMS), can produce a spectral artefact arising from the motion of clouds the cloud is spatially shifted and the amount of shift varies by spectral band. The length of time it takes to acquire all eight GOCI bands for a given slot (portion of a scene) is sucient to require that cloud motion be taken into account to fully mask or correct the eects of clouds in all bands. Inter-band correlations can be used to measure the amount of cloud shift, which can then be used to adjust the cloud mask so that the union of all shifted masks can act as a mask for all bands. This approach reduces the amount of masking required versus a simple expansion of the mask in all directions away from clouds. Cloud motion can also aect regions with unidentied clouds thin or fractional clouds that evade the cloud identication process yielding degraded quality in retrieved ocean colour parameters. Areas with moving and unidentied clouds require more elaborate masking algo-rithms to remove these degraded retrievals. Correction for the eects of moving fractional clouds may also be possible. The cloud shift information can be used to determine cloud motion and thus wind at the cloud levels on sub-minute timescales. The benecial and negative eects of moving clouds should be con-sidered for any ocean colour instrument design and associated data processing plans.

TU-H-206-04: An Effective Homomorphic Unsharp Mask Filtering Method to Correct Intensity Inhomogeneity in Daily Treatment MR Images

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, D; Gach, H; Li, H

Purpose: The daily treatment MRIs acquired on MR-IGRT systems, like diagnostic MRIs, suffer from intensity inhomogeneity issue, associated with B1 and B0 inhomogeneities. An improved homomorphic unsharp mask (HUM) filtering method, automatic and robust body segmentation, and imaging field-of-view (FOV) detection methods were developed to compute the multiplicative slow-varying correction field and correct the intensity inhomogeneity. The goal is to improve and normalize the voxel intensity so that the images could be processed more accurately by quantitative methods (e.g., segmentation and registration) that require consistent image voxel intensity values. Methods: HUM methods have been widely used for years. A bodymore » mask is required, otherwise the body surface in the corrected image would be incorrectly bright due to the sudden intensity transition at the body surface. In this study, we developed an improved HUM-based correction method that includes three main components: 1) Robust body segmentation on the normalized image gradient map, 2) Robust FOV detection (needed for body segmentation) using region growing and morphologic filters, and 3) An effective implementation of HUM using repeated Gaussian convolution. Results: The proposed method was successfully tested on patient images of common anatomical sites (H/N, lung, abdomen and pelvis). Initial qualitative comparisons showed that this improved HUM method outperformed three recently published algorithms (FCM, LEMS, MICO) in both computation speed (by 50+ times) and robustness (in intermediate to severe inhomogeneity situations). Currently implemented in MATLAB, it takes 20 to 25 seconds to process a 3D MRI volume. Conclusion: Compared to more sophisticated MRI inhomogeneity correction algorithms, the improved HUM method is simple and effective. The inhomogeneity correction, body mask, and FOV detection methods developed in this study would be useful as preprocessing tools for many MRI-related research and clinical applications in radiotherapy. Authors have received research grants from ViewRay and Varian.« less

Clinical comparison of positional accuracy and stability between dedicated versus conventional masks for immobilization in cranial stereotactic radiotherapy using 6-degree-of-freedom image guidance system-integrated platform.

PubMed

Ohtakara, Kazuhiro; Hayashi, Shinya; Tanaka, Hidekazu; Hoshi, Hiroaki; Kitahara, Masashi; Matsuyama, Katsuya; Okada, Hitoshi

2012-02-01

To compare the positioning accuracy and stability of two distinct noninvasive immobilization devices, a dedicated (D-) and conventional (C-) mask, and to evaluate the applicability of a 6-degrees-of-freedom (6D) correction, especially to the C-mask, based on our initial experience with cranial stereotactic radiotherapy (SRT) using ExacTrac (ET)/Robotics integrated into the Novalis Tx platform. The D- and C-masks were the BrainLAB frameless mask system and a general thermoplastic mask used for conventional radiotherapy such as whole brain irradiation, respectively. A total of 148 fractions in 71 patients and 125 fractions in 20 patients were analyzed for the D- and C-masks, respectively. For the C-mask, 3D correction was applied to the initial 10 patients, and thereafter, 6D correction was adopted. The 6D residual errors (REs) in the initial setup, after correction (pre-treatment), and during post-treatment were measured and compared. The D-mask provided no significant benefit for initial setup. The post-treatment median 3D vector displacements (interquatile range) were 0.38 mm (0.22, 0.60) and 0.74 mm (0.49, 1.04) for the D- and C-masks, respectively (p<0.001). The post-treatment maximal translational REs were within 1 mm and 2 mm for the D- and C-masks, respectively, and notably within 1.5 mm for the C-mask with 6D correction. The pre-treatment 3D vector displacements were significantly correlated with those for post-treatment in both masks. The D-mask confers positional stability acceptable for SRT. For the C-mask, 6D correction is also recommended, and an additional setup margin of 0.5 mm to that for the D-mask would be sufficient. The tolerance levels for the pre-treatment REs should similarly be set as small as possible for both systems. Copyright © 2011 Elsevier Ireland Ltd. All rights reserved.

Spatial release from masking based on binaural processing for up to six maskers

PubMed Central

Yost, William A.

2017-01-01

Spatial Release from Masking (SRM) was measured for identification of a female target word spoken in the presence of male masker words. Target words from a single loudspeaker located at midline were presented when two, four, or six masker words were presented either from the same source as the target or from spatially separated masker sources. All masker words were presented from loudspeakers located symmetrically around the centered target source in the front azimuth hemifield. Three masking conditions were employed: speech-in-speech masking (involving both informational and energetic masking), speech-in-noise masking (involving energetic masking), and filtered speech-in-filtered speech masking (involving informational masking). Psychophysical results were summarized as three-point psychometric functions relating proportion of correct word identification to target-to-masker ratio (in decibels) for both the co-located and spatially separated target and masker sources cases. SRM was then calculated by comparing the slopes and intercepts of these functions. SRM decreased as the number of symmetrically placed masker sources increased from two to six. This decrease was independent of the type of masking, with almost no SRM measured for six masker sources. These results suggest that when SRM is dependent primarily on binaural processing, SRM is effectively limited to fewer than six sound sources. PMID:28372135

The preprocessed connectomes project repository of manually corrected skull-stripped T1-weighted anatomical MRI data.

PubMed

Puccio, Benjamin; Pooley, James P; Pellman, John S; Taverna, Elise C; Craddock, R Cameron

2016-10-25

Skull-stripping is the procedure of removing non-brain tissue from anatomical MRI data. This procedure can be useful for calculating brain volume and for improving the quality of other image processing steps. Developing new skull-stripping algorithms and evaluating their performance requires gold standard data from a variety of different scanners and acquisition methods. We complement existing repositories with manually corrected brain masks for 125 T1-weighted anatomical scans from the Nathan Kline Institute Enhanced Rockland Sample Neurofeedback Study. Skull-stripped images were obtained using a semi-automated procedure that involved skull-stripping the data using the brain extraction based on nonlocal segmentation technique (BEaST) software, and manually correcting the worst results. Corrected brain masks were added into the BEaST library and the procedure was repeated until acceptable brain masks were available for all images. In total, 85 of the skull-stripped images were hand-edited and 40 were deemed to not need editing. The results are brain masks for the 125 images along with a BEaST library for automatically skull-stripping other data. Skull-stripped anatomical images from the Neurofeedback sample are available for download from the Preprocessed Connectomes Project. The resulting brain masks can be used by researchers to improve preprocessing of the Neurofeedback data, as training and testing data for developing new skull-stripping algorithms, and for evaluating the impact on other aspects of MRI preprocessing. We have illustrated the utility of these data as a reference for comparing various automatic methods and evaluated the performance of the newly created library on independent data.

Compensation of long-range process effects on photomasks by design data correction

NASA Astrophysics Data System (ADS)

Schneider, Jens; Bloecker, Martin; Ballhorn, Gerd; Belic, Nikola; Eisenmann, Hans; Keogan, Danny

2002-12-01

CD requirements for advanced photomasks are getting very demanding for the 100 nm-node and below; the ITRS roadmap requires CD uniformities below 10 nm for the most critical layers. To reach this goal, statistical as well as systematic CD contributions must be minimized. Here, we focus on the reduction of systematic CD variations across the masks that may be caused by process effects, e.g. dry etch loading. We address this topic by compensating such effects via design data correction analogous to proximity correction. Dry etch loading is modeled by gaussian convolution of pattern densities. Data correction is done geometrically by edge shifting. As the effect amplitude has an order of magnitude of 10 nm this can only be done on e-beam writers with small address grids to reduce big CD steps in the design data. We present modeling and correction results for special mask patterns with very strong pattern density variations showing that the compensation method is able to reduce CD uniformity by 50-70% depending on pattern details. The data correction itself is done with a new module developed especially to compensate long-range effects and fits nicely into the common data flow environment.

Hot spot variability and lithography process window investigation by CDU improvement using CDC technique

NASA Astrophysics Data System (ADS)

Thamm, Thomas; Geh, Bernd; Djordjevic Kaufmann, Marija; Seltmann, Rolf; Bitensky, Alla; Sczyrba, Martin; Samy, Aravind Narayana

2018-03-01

Within the current paper, we will concentrate on the well-known CDC technique from Carl Zeiss to improve the CD distribution of the wafer by improving the reticle CDU and its impact on hotspots and Litho process window. The CDC technique uses an ultra-short pulse laser technology, which generates a micro-level Shade-In-Element (also known as "Pixels") into the mask quartz bulk material. These scatter centers are able to selectively attenuate certain areas of the reticle in higher resolution compared to other methods and thus improve the CD uniformity. In a first section, we compare the CDC technique with scanner dose correction schemes. It becomes obvious, that the CDC technique has unique advantages with respect to spatial resolution and intra-field flexibility over scanner correction schemes, however, due to the scanner flexibility across wafer both methods are rather complementary than competing. In a second section we show that a reference feature based correction scheme can be used to improve the CDU of a full chip with multiple different features that have different MEEF and dose sensitivities. In detail we will discuss the impact of forward scattering light originated by the CDC pixels on the illumination source and the related proximity signature. We will show that the impact on proximity is small compared to the CDU benefit of the CDC technique. Finally we show to which extend the reduced variability across reticle will result in a better common electrical process window of a whole chip design on the whole reticle field on wafer. Finally we will discuss electrical verification results between masks with purposely made bad CDU that got repaired by the CDC technique versus inherently good "golden" masks on a complex logic device. No yield difference is observed between the repaired bad masks and the masks with good CDU.

Mask data processing in the era of multibeam writers

NASA Astrophysics Data System (ADS)

Abboud, Frank E.; Asturias, Michael; Chandramouli, Maesh; Tezuka, Yoshihiro

2014-10-01

Mask writers' architectures have evolved through the years in response to ever tightening requirements for better resolution, tighter feature placement, improved CD control, and tolerable write time. The unprecedented extension of optical lithography and the myriad of Resolution Enhancement Techniques have tasked current mask writers with ever increasing shot count and higher dose, and therefore, increasing write time. Once again, we see the need for a transition to a new type of mask writer based on massively parallel architecture. These platforms offer a step function improvement in both dose and the ability to process massive amounts of data. The higher dose and almost unlimited appetite for edge corrections open new windows of opportunity to further push the envelope. These architectures are also naturally capable of producing curvilinear shapes, making the need to approximate a curve with multiple Manhattan shapes unnecessary.

Manufacturability study of masks created by inverse lithography technology (ILT)

NASA Astrophysics Data System (ADS)

Martin, Patrick M.; Progler, C. J.; Xiao, G.; Gray, R.; Pang, L.; Liu, Y.

2005-11-01

As photolithography is pushed to fabricate deep-sub wavelength devices for 90nm, 65nm and smaller technology nodes using available exposure tools (i.e., 248nm, 193nm steppers), photomask capability is becoming extremely critical. For example, PSM masks require more complicated processing; aggressive OPC makes the writing time longer and sometimes unpredictable; and, high MEEF imposes much more stringent demands on mask quality. Therefore, in order for any new lithography technology to be adopted into production, mask manufacturability must be studied thoroughly and carefully. In this paper we will present the mask manufacturability study on mask patterns created using Inverse Lithography Technology (ILT). Unlike conventional OPC methodologies, ILT uses a unique outcome-based technology to mathematically determine the mask features that produce the desired on-wafer results. ILT solves the most critical litho challenges of the deep sub-wavelength era. Potential benefits include: higher yield; expanded litho process windows; superb pattern fidelity at 90, 65 & 45-nm nodes; and reduced time-to-silicon - all without changing the existing lithography infrastructure and design-to-silicon flow. In this study a number of cell structures were selected and used as test patterns. "Luminized patterns" were generated for binary mask and attenuated phase-shift mask. Both conventional OPC patterns and "luminized patterns" were put on a test reticle side by side, and they all have a number of variations in term of correction aggressivity level and mask complexity. Mask manufacturability, including data fracturing, writing time, mask inspection, and metrology were studied. The results demonstrate that, by optimizing the inspection recipe, masks created using ILT technology can be made and qualified using current processes with a reasonable turn-around time.

Use of KRS-XE positive chemically amplified resist for optical mask manufacturing

NASA Astrophysics Data System (ADS)

Ashe, Brian; Deverich, Christina; Rabidoux, Paul A.; Peck, Barbara; Petrillo, Karen E.; Angelopoulos, Marie; Huang, Wu-Song; Moreau, Wayne M.; Medeiros, David R.

2002-03-01

The traditional mask making process uses chain scission-type resists such as PBS, poly(butene-1-sulfone), and ZEP, poly(methyl a-chloroacrylate-co-a-methylstyrene) for making masks with dimensions greater than 180nm. PBS resist requires a wet etch process to produce patterns in chrome. ZEP was employed for dry etch processing to meet the requirements of shrinking dimensions, optical proximity corrections and phase shift masks. However, ZEP offers low contrast, marginal etch resistance, organic solvent development, and concerns regarding resist heating with its high dose requirements1. Chemically Amplified Resist (CAR) systems are a very good choice for dimensions less than 180nm because of their high sensitivity and contrast, high resolution, dry etch resistance, aqueous development, and process latitude2. KRS-XE was developed as a high contrast CA resist based on ketal protecting groups that eliminate the need for post exposure bake (PEB). This resist can be used for a variety of electron beam exposures, and improves the capability to fabricate masks for devices smaller than 180nm. Many factors influence the performance of resists in mask making such as post apply bake, exposure dose, resist develop, and post exposure bake. These items will be discussed as well as the use of reactive ion etching (RIE) selectivity and pattern transfer.

Model-based virtual VSB mask writer verification for efficient mask error checking and optimization prior to MDP

NASA Astrophysics Data System (ADS)

Pack, Robert C.; Standiford, Keith; Lukanc, Todd; Ning, Guo Xiang; Verma, Piyush; Batarseh, Fadi; Chua, Gek Soon; Fujimura, Akira; Pang, Linyong

2014-10-01

A methodology is described wherein a calibrated model-based `Virtual' Variable Shaped Beam (VSB) mask writer process simulator is used to accurately verify complex Optical Proximity Correction (OPC) and Inverse Lithography Technology (ILT) mask designs prior to Mask Data Preparation (MDP) and mask fabrication. This type of verification addresses physical effects which occur in mask writing that may impact lithographic printing fidelity and variability. The work described here is motivated by requirements for extreme accuracy and control of variations for today's most demanding IC products. These extreme demands necessitate careful and detailed analysis of all potential sources of uncompensated error or variation and extreme control of these at each stage of the integrated OPC/ MDP/ Mask/ silicon lithography flow. The important potential sources of variation we focus on here originate on the basis of VSB mask writer physics and other errors inherent in the mask writing process. The deposited electron beam dose distribution may be examined in a manner similar to optical lithography aerial image analysis and image edge log-slope analysis. This approach enables one to catch, grade, and mitigate problems early and thus reduce the likelihood for costly long-loop iterations between OPC, MDP, and wafer fabrication flows. It moreover describes how to detect regions of a layout or mask where hotspots may occur or where the robustness to intrinsic variations may be improved by modification to the OPC, choice of mask technology, or by judicious design of VSB shots and dose assignment.

Matching OPC and masks on 300-mm lithography tools utilizing variable illumination settings

NASA Astrophysics Data System (ADS)

Palitzsch, Katrin; Kubis, Michael; Schroeder, Uwe P.; Schumacher, Karl; Frangen, Andreas

2004-05-01

CD control is crucial to maximize product yields on 300mm wafers. This is particularly true for DRAM frontend lithography layers, like gate level, and deep trench (capacitor) level. In the DRAM process, large areas of the chip are taken up by array structures, which are difficult to structure due to aggressive pitch requirements. Consequently, the lithography process is centered such that the array structures are printed on target. Optical proximity correction is applied to print gate level structures in the periphery circuitry on target. Only slight differences of the different Zernike terms can cause rather large variations of the proximity curves, resulting in a difference of isolated and semi-isolated lines printed on different tools. If the deviations are too large, tool specific OPC is needed. The same is true for deep trench level, where the length to width ratio of elongated contact-like structures is an important parameter to adjust the electrical properties of the chip. Again, masks with specific biases for tools with different Zernikes are needed to optimize product yield. Additionally, mask making contributes to the CD variation of the process. Theoretically, the CD deviation caused by an off-centered mask process can easily eat up the majority of the CD budget of a lithography process. In practice, masks are very often distributed intelligently among production tools, such that lens and mask effects cancel each other. However, only dose adjusting and mask allocation may still result in a high CD variation with large systematical contributions. By adjusting the illumination settings, we have successfully implemented a method to reduce CD variation on our advanced processes. Especially inner and outer sigma for annular illumination, and the numerical aperture, can be optimized to match mask and stepper properties. This process will be shown to overcome slight lens and mask differences effectively. The effects on lithography process windows have to be considered, nonetheless.

Ultra-low roughness magneto-rheological finishing for EUV mask substrates

NASA Astrophysics Data System (ADS)

Dumas, Paul; Jenkins, Richard; McFee, Chuck; Kadaksham, Arun J.; Balachandran, Dave K.; Teki, Ranganath

2013-09-01

EUV mask substrates, made of titania-doped fused silica, ideally require sub-Angstrom surface roughness, sub-30 nm flatness, and no bumps/pits larger than 1 nm in height/depth. To achieve the above specifications, substrates must undergo iterative global and local polishing processes. Magnetorheological finishing (MRF) is a local polishing technique which can accurately and deterministically correct substrate figure, but typically results in a higher surface roughness than the current requirements for EUV substrates. We describe a new super-fine MRF® polishing fluid whichis able to meet both flatness and roughness specifications for EUV mask blanks. This eases the burden on the subsequent global polishing process by decreasing the polishing time, and hence the defectivity and extent of figure distortion.

Comparison of line shortening assessed by aerial image and wafer measurements

NASA Astrophysics Data System (ADS)

Ziegler, Wolfram; Pforr, Rainer; Thiele, Joerg; Maurer, Wilhelm

1997-02-01

Increasing number of patterns per area and decreasing linewidth demand enhancement technologies for optical lithography. OPC, the correction of systematic non-linearity in the pattern transfer process by correction of design data is one possibility to tighten process control and to increase the lifetime of existing lithographic equipment. The two most prominent proximity effects to be corrected by OPC are CD variation and line shortening. Line shortening measured on a wafer is up to 2 times larger than full resist simulation results. Therefore, the influence of mask geometry to line shortening is a key item to parameterize lithography. The following paper discusses the effect of adding small serifs to line ends with 0.25 micrometer ground-rule design. For reticles produced on an ALTA 3000 with standard wet etch process, the corner rounding on them mask can be reduced by adding serifs of a certain size. The corner rounding was measured and the effect on line shortening on the wafer is determined. This was investigated by resist measurements on wafer, aerial image plus resist simulation and aerial image measurements on the AIMS microscope.

A novel methodology for litho-to-etch pattern fidelity correction for SADP process

NASA Astrophysics Data System (ADS)

Chen, Shr-Jia; Chang, Yu-Cheng; Lin, Arthur; Chang, Yi-Shiang; Lin, Chia-Chi; Lai, Jun-Cheng

2017-03-01

For 2x nm node semiconductor devices and beyond, more aggressive resolution enhancement techniques (RETs) such as source-mask co-optimization (SMO), litho-etch-litho-etch (LELE) and self-aligned double patterning (SADP) are utilized for the low k1 factor lithography processes. In the SADP process, the pattern fidelity is extremely critical since a slight photoresist (PR) top-loss or profile roughness may impact the later core trim process, due to its sensitivity to environment. During the subsequent sidewall formation and core removal processes, the core trim profile weakness may worsen and induces serious defects that affect the final electrical performance. To predict PR top-loss, a rigorous lithography simulation can provide a reference to modify mask layouts; but it takes a much longer run time and is not capable of full-field mask data preparation. In this paper, we first brought out an algorithm which utilizes multi-intensity levels from conventional aerial image simulation to assess the physical profile through lithography to core trim etching steps. Subsequently, a novel correction method was utilized to improve the post-etch pattern fidelity without the litho. process window suffering. The results not only matched PR top-loss in rigorous lithography simulation, but also agreed with post-etch wafer data. Furthermore, this methodology can also be incorporated with OPC and post-OPC verification to improve core trim profile and final pattern fidelity at an early stage.

Pixel-based OPC optimization based on conjugate gradients.

PubMed

Ma, Xu; Arce, Gonzalo R

2011-01-31

Optical proximity correction (OPC) methods are resolution enhancement techniques (RET) used extensively in the semiconductor industry to improve the resolution and pattern fidelity of optical lithography. In pixel-based OPC (PBOPC), the mask is divided into small pixels, each of which is modified during the optimization process. Two critical issues in PBOPC are the required computational complexity of the optimization process, and the manufacturability of the optimized mask. Most current OPC optimization methods apply the steepest descent (SD) algorithm to improve image fidelity augmented by regularization penalties to reduce the complexity of the mask. Although simple to implement, the SD algorithm converges slowly. The existing regularization penalties, however, fall short in meeting the mask rule check (MRC) requirements often used in semiconductor manufacturing. This paper focuses on developing OPC optimization algorithms based on the conjugate gradient (CG) method which exhibits much faster convergence than the SD algorithm. The imaging formation process is represented by the Fourier series expansion model which approximates the partially coherent system as a sum of coherent systems. In order to obtain more desirable manufacturability properties of the mask pattern, a MRC penalty is proposed to enlarge the linear size of the sub-resolution assistant features (SRAFs), as well as the distances between the SRAFs and the main body of the mask. Finally, a projection method is developed to further reduce the complexity of the optimized mask pattern.

Comparison of binary mask defect printability analysis using virtual stepper system and aerial image microscope system

NASA Astrophysics Data System (ADS)

Phan, Khoi A.; Spence, Chris A.; Dakshina-Murthy, S.; Bala, Vidya; Williams, Alvina M.; Strener, Steve; Eandi, Richard D.; Li, Junling; Karklin, Linard

1999-12-01

As advanced process technologies in the wafer fabs push the patterning processes toward lower k1 factor for sub-wavelength resolution printing, reticles are required to use optical proximity correction (OPC) and phase-shifted mask (PSM) for resolution enhancement. For OPC/PSM mask technology, defect printability is one of the major concerns. Current reticle inspection tools available on the market sometimes are not capable of consistently differentiating between an OPC feature and a true random defect. Due to the process complexity and high cost associated with the making of OPC/PSM reticles, it is important for both mask shops and lithography engineers to understand the impact of different defect types and sizes to the printability. Aerial Image Measurement System (AIMS) has been used in the mask shops for a number of years for reticle applications such as aerial image simulation and transmission measurement of repaired defects. The Virtual Stepper System (VSS) provides an alternative method to do defect printability simulation and analysis using reticle images captured by an optical inspection or review system. In this paper, pre- programmed defects and repairs from a Defect Sensitivity Monitor (DSM) reticle with 200 nm minimum features (at 1x) will be studied for printability. The simulated resist lines by AIMS and VSS are both compared to SEM images of resist wafers qualitatively and quantitatively using CD verification.Process window comparison between unrepaired and repaired defects for both good and bad repair cases will be shown. The effect of mask repairs to resist pattern images for the binary mask case will be discussed. AIMS simulation was done at the International Sematech, Virtual stepper simulation at Zygo and resist wafers were processed at AMD-Submicron Development Center using a DUV lithographic process for 0.18 micrometer Logic process technology.

An optimized OPC and MDP flow for reducing mask write time and mask cost

NASA Astrophysics Data System (ADS)

Yang, Ellyn; Li, Cheng He; Park, Se Jin; Zhu, Yu; Guo, Eric

2010-09-01

In the process of optical proximity correction, layout edge or fragment is migrating to proper position in order to minimize edge placement error (EPE). During this fragment migration, several factors other than EPE can be also taken into account as a part of cost function for optimal fragment displacement. Several factors are devised in favor of OPC stability, which can accommodate room for high mask error enhancement factor (MEEF), lack of process window, catastrophic pattern failure such as pinch/bridge and improper fragmentation. As technology node becomes finer, there happens conflict between OPC accuracy and stability. Especially for metal layers, OPC has focused on the stability by loss of accurate OPC results. On this purpose, several techniques have been introduced, which are target smoothing, process window aware OPC, model-based retargeting and adaptive OPC. By utilizing those techniques, OPC enables more stabilized patterning, instead of realizing design target exactly on wafer. Inevitably, post-OPC layouts become more complicated because those techniques invoke additional edge, or fragments prior to correction or during OPC iteration. As a result, jogs of post OPC layer can be dramatically increased, which results in huge number of shot count after data fracturing. In other words, there is trade-off relationship between data complexity and various methods for OPC stability. In this paper, those relationships have been investigated with respect to several technology nodes. The mask shot count reduction is achieved by reducing the number of jogs with which EPE difference are within pre-specified value. The effect of jog smoothing on OPC output - in view of OPC performance and mask data preparation - was studied quantitatively for respective technology nodes.

Coatings on reflective mask substrates

DOEpatents

Tong, William Man-Wai; Taylor, John S.; Hector, Scott D.; Mangat, Pawitter J. S.; Stivers, Alan R.; Kofron, Patrick G.; Thompson, Matthew A.

2002-01-01

A process for creating a mask substrate involving depositing: 1) a coating on one or both sides of a low thermal expansion material EUVL mask substrate to improve defect inspection, surface finishing, and defect levels; and 2) a high dielectric coating, on the backside to facilitate electrostatic chucking and to correct for any bowing caused by the stress imbalance imparted by either other deposited coatings or the multilayer coating of the mask substrate. An film, such as TaSi, may be deposited on the front side and/or back of the low thermal expansion material before the material coating to balance the stress. The low thermal expansion material with a silicon overlayer and a silicon and/or other conductive underlayer enables improved defect inspection and stress balancing.

Fast mask writers: technology options and considerations

NASA Astrophysics Data System (ADS)

Litt, Lloyd C.; Groves, Timothy; Hughes, Greg

2011-04-01

The semiconductor industry is under constant pressure to reduce production costs even as the complexity of technology increases. Lithography represents the most expensive process due to its high capital equipment costs and the implementation of low-k1 lithographic processes, which have added to the complexity of making masks because of the greater use of optical proximity correction, pixelated masks, and double or triple patterning. Each of these mask technologies allows the production of semiconductors at future nodes while extending the utility of current immersion tools. Low-k1 patterning complexity combined with increased data due to smaller feature sizes is driving extremely long mask write times. While a majority of the industry is willing to accept times of up to 24 hours, evidence suggests that the write times for many masks at the 22 nm node and beyond will be significantly longer. It has been estimated that funding on the order of 50M to 90M for non-recurring engineering (NRE) costs will be required to develop a multiple beam mask writer system, yet the business case to recover this kind of investment is not strong. Moreover, funding such a development poses a high risk for an individual supplier. The structure of the mask fabrication marketplace separates the mask writer equipment customer (the mask supplier) from the final customer (wafer manufacturer) that will be most effected by the increase in mask cost that will result if a high speed mask writer is not available. Since no individual company will likely risk entering this market, some type of industry-wide funding model will be needed.

Use of face masks in a primary care outpatient setting in Hong Kong: Knowledge, attitudes and practices.

PubMed

Ho, H S W

2012-12-01

To assess if a knowledge gap exists in the correct use of face masks, and to explore the correlations between knowledge, attitudes and practices regarding the use of face masks among outpatients and their caregivers in an outpatient clinic in Hong Kong. Cross-sectional study. Outpatients and their caregivers who were present at an outpatient setting in Hong Kong were invited to participate in this survey. All participants were asked to complete a self-administered closed-ended questionnaire about their knowledge, attitudes and practices regarding the use of face masks. Data were described using descriptive statistics and correlation coefficients. Among the 399 respondents, 52% knew the correct steps in wearing a face mask, and their attitudes toward face masks were generally positive. Further analyses showed that respondents were more likely to wear a face mask at a clinic than in a public place or at home. Moreover, respondents were more likely to wear a face mask to protect others against influenza-like illness (ILI) than for self-protection. There was low to moderate correlation between attitudes and practices (correlation coefficient 0.26, P < 0.05). This study identified a knowledge gap in the correct use of face masks among outpatients and their caregivers; attitudes and practices regarding the use of face masks were generally positive, but correlation was not high. It is recommended that public health education campaigns should tailor efficient programmes to combat ILI transmission among outpatient clinic populations by improving knowledge about the correct use of face masks. Copyright © 2012 The Royal Society for Public Health. Published by Elsevier Ltd. All rights reserved.

SeaWiFS technical report series. Volume 31: Stray light in the SeaWiFS radiometer

NASA Technical Reports Server (NTRS)

Hooker, Stanford B. (Editor); Firestone, Elaine R. (Editor); Acker, James G. (Editor); Barnes, Robert A.; Holmes, Alan W.; Esaias, Wayne E.

1995-01-01

Some of the measurements from the Sea-viewing Wide Field-of-view Sensor (SeaWiFS) will not be useful as ocean measurements. For the ocean data set, there are procedures in place to mask the SeaWiFS measurements of clouds and ice. Land measurements will also be masked using a geographic technique based on each measurment's latitude and longitude. Each of these masks involves a source of light much brighter than the ocean. Because of stray light in the SeaWiFS radiometer, light from these bright sources can contaminate ocean measurements located a variable number of pixels away from a bright source. In this document, the sources of stray light in the sensor are examined, and a method is developed for masking measurements near bright targets for stray light effects. In addition, a procedure is proposed for reducing the effects of stray light in the flight data from SeaWiFS. This correction can also reduce the number of pixels masked for stray light. Without these corrections, local area scenes must be masked 10 pixels before and after bright targets in the along-scan direction. The addition of these corrections reduces the along-scan masks to four pixels before and after bright sources. In the along-track direction, the flight data are not corrected, and are masked two pixels before and after. Laboratory measurements have shown that stray light within the instrument changes in a direct ratio to the intensity of the bright source. The measurements have also shown that none of the bands show peculiarities in their stray light response. In other words, the instrument's response is uniform from band to band. The along-scan correction is based on each band's response to a 1 pixel wide bright sources. Since these results are based solely on preflight laboratory measurements, their successful implementation requires compliance with two additional criteria. First, since SeaWiFS has a large data volume, the correction and masking procedures must be such that they can be converted into computationally fast algorithms. Second, they must be shown to operate properly on flight data. The laboratory results, and the corrections and masking procedures that derive from them, should be considered as zeroeth order estimates of the effects that will be found on orbit.

Comparison of OPC job prioritization schemes to generate data for mask manufacturing

NASA Astrophysics Data System (ADS)

Lewis, Travis; Veeraraghavan, Vijay; Jantzen, Kenneth; Kim, Stephen; Park, Minyoung; Russell, Gordon; Simmons, Mark

2015-03-01

Delivering mask ready OPC corrected data to the mask shop on-time is critical for a foundry to meet the cycle time commitment for a new product. With current OPC compute resource sharing technology, different job scheduling algorithms are possible, such as, priority based resource allocation and fair share resource allocation. In order to maximize computer cluster efficiency, minimize the cost of the data processing and deliver data on schedule, the trade-offs of each scheduling algorithm need to be understood. Using actual production jobs, each of the scheduling algorithms will be tested in a production tape-out environment. Each scheduling algorithm will be judged on its ability to deliver data on schedule and the trade-offs associated with each method will be analyzed. It is now possible to introduce advance scheduling algorithms to the OPC data processing environment to meet the goals of on-time delivery of mask ready OPC data while maximizing efficiency and reducing cost.

Cycle time reduction by Html report in mask checking flow

NASA Astrophysics Data System (ADS)

Chen, Jian-Cheng; Lu, Min-Ying; Fang, Xiang; Shen, Ming-Feng; Ma, Shou-Yuan; Yang, Chuen-Huei; Tsai, Joe; Lee, Rachel; Deng, Erwin; Lin, Ling-Chieh; Liao, Hung-Yueh; Tsai, Jenny; Bowhill, Amanda; Vu, Hien; Russell, Gordon

2017-07-01

The Mask Data Correctness Check (MDCC) is a reticle-level, multi-layer DRC-like check evolved from mask rule check (MRC). The MDCC uses extended job deck (EJB) to achieve mask composition and to perform a detailed check for positioning and integrity of each component of the reticle. Different design patterns on the mask will be mapped to different layers. Therefore, users may be able to review the whole reticle and check the interactions between different designs before the final mask pattern file is available. However, many types of MDCC check results, such as errors from overlapping patterns usually have very large and complex-shaped highlighted areas covering the boundary of the design. Users have to load the result OASIS file and overlap it to the original database that was assembled in MDCC process on a layout viewer, then search for the details of the check results. We introduce a quick result-reviewing method based on an html format report generated by Calibre® RVE. In the report generation process, we analyze and extract the essential part of result OASIS file to a result database (RDB) file by standard verification rule format (SVRF) commands. Calibre® RVE automatically loads the assembled reticle pattern and generates screen shots of these check results. All the processes are automatically triggered just after the MDCC process finishes. Users just have to open the html report to get the information they need: for example, check summary, captured images of results and their coordinates.

Investigation of phase distribution using Phame® in-die phase measurements

NASA Astrophysics Data System (ADS)

Buttgereit, Ute; Perlitz, Sascha

2009-03-01

As lithography mask processes move toward 45nm and 32nm node, mask complexity increases steadily, mask specifications tighten and process control becomes extremely important. Driven by this fact the requirements for metrology tools increase as well. Efforts in metrology have been focused on accurately measuring CD linearity and uniformity across the mask, and accurately measuring phase variation on Alternating/Attenuated PSM and transmission for Attenuated PSM. CD control on photo masks is usually done through the following processes: exposure dose/focus change, resist develop and dry etch. The key requirement is to maintain correct CD linearity and uniformity across the mask. For PSM specifically, the effect of CD uniformity for both Alternating PSM and Attenuated PSM and etch depth for Alternating PSM becomes also important. So far phase measurement has been limited to either measuring large-feature phase using interferometer-based metrology tools or measuring etch depth using AFM and converting etch depth into phase under the assumption that trench profile and optical properties of the layers remain constant. However recent investigations show that the trench profile and optical property of layers impact the phase. This effect is getting larger for smaller CD's. The currently used phase measurement methods run into limitations because they are not able to capture 3D mask effects, diffraction limitations or polarization effects. The new phase metrology system - Phame(R) developed by Carl Zeiss SMS overcomes those limitations and enables laterally resolved phase measurement in any kind of production feature on the mask. The resolution of the system goes down to 120nm half pitch at mask level. We will report on tool performance data with respect to static and dynamic phase repeatability focusing on Alternating PSM. Furthermore the phase metrology system was used to investigate mask process signatures on Alternating PSM in order to further improve the overall PSM process performance. Especially global loading effects caused by the pattern density and micro loading effects caused by the feature size itself have been evaluated using the capability of measuring phase in the small production features. The results of this study will be reported in this paper.

New method of 2-dimensional metrology using mask contouring

NASA Astrophysics Data System (ADS)

Matsuoka, Ryoichi; Yamagata, Yoshikazu; Sugiyama, Akiyuki; Toyoda, Yasutaka

2008-10-01

We have developed a new method of accurately profiling and measuring of a mask shape by utilizing a Mask CD-SEM. The method is intended to realize high accuracy, stability and reproducibility of the Mask CD-SEM adopting an edge detection algorithm as the key technology used in CD-SEM for high accuracy CD measurement. In comparison with a conventional image processing method for contour profiling, this edge detection method is possible to create the profiles with much higher accuracy which is comparable with CD-SEM for semiconductor device CD measurement. This method realizes two-dimensional metrology for refined pattern that had been difficult to measure conventionally by utilizing high precision contour profile. In this report, we will introduce the algorithm in general, the experimental results and the application in practice. As shrinkage of design rule for semiconductor device has further advanced, an aggressive OPC (Optical Proximity Correction) is indispensable in RET (Resolution Enhancement Technology). From the view point of DFM (Design for Manufacturability), a dramatic increase of data processing cost for advanced MDP (Mask Data Preparation) for instance and surge of mask making cost have become a big concern to the device manufacturers. This is to say, demands for quality is becoming strenuous because of enormous quantity of data growth with increasing of refined pattern on photo mask manufacture. In the result, massive amount of simulated error occurs on mask inspection that causes lengthening of mask production and inspection period, cost increasing, and long delivery time. In a sense, it is a trade-off between the high accuracy RET and the mask production cost, while it gives a significant impact on the semiconductor market centered around the mask business. To cope with the problem, we propose the best method of a DFM solution using two-dimensional metrology for refined pattern.

Task difficulty differentially affects two measures of processing load: the pupil response during sentence processing and delayed cued recall of the sentences.

PubMed

Zekveld, Adriana A; Festen, Joost M; Kramer, Sophia E

2013-08-01

In this study, the authors assessed the influence of masking level (29% or 71% sentence perception) and test modality on the processing load during language perception as reflected by the pupil response. In addition, the authors administered a delayed cued stimulus recall test to examine whether processing load affected the encoding of the stimuli in memory. Participants performed speech and text reception threshold tests, during which the pupil response was measured. In the cued recall test, the first half of correctly perceived sentences was presented, and participants were asked to complete the sentences. Reading and listening span tests of working memory capacity were presented as well. Regardless of test modality, the pupil response indicated higher processing load in the 29% condition than in the 71% correct condition. Cued recall was better for the 29% condition. The consistent effect of masking level on the pupil response during listening and reading support the validity of the pupil response as a measure of processing load during language perception. The absent relation between pupil response and cued recall may suggest that cued recall is not directly related to processing load, as reflected by the pupil response.

Proximity Effect Correction by Pattern Modified Stencil Mask in Large-Field Projection Electron-Beam Lithography

NASA Astrophysics Data System (ADS)

Kobinata, Hideo; Yamashita, Hiroshi; Nomura, Eiichi; Nakajima, Ken; Kuroki, Yukinori

1998-12-01

A new method for proximity effect correction, suitable for large-field electron-beam (EB) projection lithography with high accelerating voltage, such as SCALPEL and PREVAIL in the case where a stencil mask is used, is discussed. In this lithography, a large-field is exposed by the same dose, and thus, the dose modification method, which is used in the variable-shaped beam and the cell projection methods, cannot be used in this case. In this study, we report on development of a new proximity effect correction method which uses a pattern modified stencil mask suitable for high accelerating voltage and large-field EB projection lithography. In order to obtain the mask bias value, we have investigated linewidth reduction, due to the proximity effect, in the peripheral memory cell area, and found that it could be expressed by a simple function and all the correction parameters were easily determined from only the mask pattern data. The proximity effect for the peripheral array pattern could also be corrected by considering the pattern density. Calculated linewidth deviation was 3% or less for a 0.07-µm-L/S memory cell pattern and 5% or less for a 0.14-µm-line and 0.42-µm-space peripheral array pattern, simultaneously.

Influence of mask type and mask position on the effectiveness of bag-mask ventilation in a neonatal manikin.

PubMed

Deindl, Philipp; O'Reilly, Megan; Zoller, Katharina; Berger, Angelika; Pollak, Arnold; Schwindt, Jens; Schmölzer, Georg M

2014-01-01

Anatomical face mask with an air cushion rim might be placed accidentally in a false orientation on the newborn's face or filled with various amounts of air during neonatal resuscitation. Both false orientation as well as variable filling may reduce a tight seal and therefore hamper effective positive pressure ventilation (PPV). We aimed to measure the influence of mask type and mask position on the effectiveness of PPV. Twenty neonatal staff members delivered PPV to a modified, leak-free manikin. Resuscitation parameters were recorded using a self-inflatable bag PPV with an Intersurgical anatomical air cushion rim face mask (IS) and a size 0/1 Laerdal round face mask. Three different positions of the IS were tested: correct position, 90° and 180° rotation in reference to the midline of the face. IS masks in each correct position on the face but with different inflation of the air cushion (empty, 10, 20 and 30 mL). Mask leak was similar with mask rotation to either 90° or 180° but significantly increased from 27 (13-73) % with an adequate filled IS mask compared to 52 (16-83) % with an emptied air cushion rim. Anatomical-shaped face mask had similar mask leaks compared to round face mask. A wrongly positioned anatomical-shaped mask does not influence mask leak. Mask leak significantly increased once the air cushion rim was empty, which may cause failure in mask PPV.

Ripple-aware optical proximity correction fragmentation for back-end-of-line designs

NASA Astrophysics Data System (ADS)

Wang, Jingyu; Wilkinson, William

2018-01-01

Accurate characterization of image rippling is critical in early detection of back-end-of-line (BEOL) patterning weakpoints, as most defects are strongly associated with excessive rippling that does not get effectively compensated by optical proximity correction (OPC). We correlate image contour with design shapes to account for design geometry-dependent rippling signature, and explore the best practice of OPC fragmentation for BEOL geometries. Specifically, we predict the optimum contour as allowed by the lithographic process and illumination conditions and locate ripple peaks, valleys, and inflection points. This allows us to identify potential process weakpoints and segment the mask accordingly to achieve the best correction results.

Off-target model based OPC

NASA Astrophysics Data System (ADS)

Lu, Mark; Liang, Curtis; King, Dion; Melvin, Lawrence S., III

2005-11-01

Model-based Optical Proximity correction has become an indispensable tool for achieving wafer pattern to design fidelity at current manufacturing process nodes. Most model-based OPC is performed considering the nominal process condition, with limited consideration of through process manufacturing robustness. This study examines the use of off-target process models - models that represent non-nominal process states such as would occur with a dose or focus variation - to understands and manipulate the final pattern correction to a more process robust configuration. The study will first examine and validate the process of generating an off-target model, then examine the quality of the off-target model. Once the off-target model is proven, it will be used to demonstrate methods of generating process robust corrections. The concepts are demonstrated using a 0.13 μm logic gate process. Preliminary indications show success in both off-target model production and process robust corrections. With these off-target models as tools, mask production cycle times can be reduced.

Multiple beam mask writers: an industry solution to the write time crisis

NASA Astrophysics Data System (ADS)

Litt, Lloyd C.

2010-09-01

The semiconductor industry is under constant pressure to reduce production costs even as technology complexity increases. Lithography represents the most expensive process due to its high capital equipment costs and the implementation of low-k1 lithographic processes, which has added to the complexity of making masks through the greater use of optical proximity correction, pixelated masks, and double or triple patterning. Each of these mask technologies allows the production of semiconductors at future nodes while extending the utility of current immersion tools. Low k1 patterning complexity combined with increased data due to smaller feature sizes is driving extremely long mask write times. While a majority of the industry is willing to accept mask write times of up to 24 hours, evidence suggests that the write times for many masks at the 22 nm node and beyond will be significantly longer. It has been estimated that $50M+ in non-recurring engineering (NRE) costs will be required to develop a multiple beam mask writer system, yet the business case to recover this kind of investment is not strong. Moreover, funding such a development is a high risk for an individual supplier. The problem is compounded by a disconnect between the tool customer (the mask supplier) and the final mask customer that will bear the increased costs if a high speed writer is not available. Since no individual company will likely risk entering this market, some type of industry-wide funding model will be needed. Because SEMATECH's member companies strongly support a multiple beam technology for mask writers to reduce the write time and cost of 193 nm and EUV masks, SEMATECH plans to pursue an advanced mask writer program in 2011 and 2012. In 2010, efforts will focus on identifying a funding model to address the investment to develop such a technology.

Digital chaos-masked optical encryption scheme enhanced by two-dimensional key space

NASA Astrophysics Data System (ADS)

Liu, Ling; Xiao, Shilin; Zhang, Lu; Bi, Meihua; Zhang, Yunhao; Fang, Jiafei; Hu, Weisheng

2017-09-01

A digital chaos-masked optical encryption scheme is proposed and demonstrated. The transmitted signal is completely masked by interference chaotic noise in both bandwidth and amplitude with analog method via dual-drive Mach-Zehnder modulator (DDMZM), making the encrypted signal analog, noise-like and unrecoverable by post-processing techniques. The decryption process requires precise matches of both the amplitude and phase between the cancellation and interference chaotic noises, which provide a large two-dimensional key space with the help of optical interference cancellation technology. For 10-Gb/s 16-quadrature amplitude modulation (QAM) orthogonal frequency division multiplexing (OFDM) signal over the maximum transmission distance of 80 km without dispersion compensation or inline amplifier, the tolerable mismatch ranges of amplitude and phase/delay at the forward error correction (FEC) threshold of 3.8×10-3 are 0.44 dB and 0.08 ns respectively.

Wafer hotspot prevention using etch aware OPC correction

NASA Astrophysics Data System (ADS)

Hamouda, Ayman; Power, Dave; Salama, Mohamed; Chen, Ao

2016-03-01

As technology development advances into deep-sub-wavelength nodes, multiple patterning is becoming more essential to achieve the technology shrink requirements. Recently, Optical Proximity Correction (OPC) technology has proposed simultaneous correction of multiple mask-patterns to enable multiple patterning awareness during OPC correction. This is essential to prevent inter-layer hot-spots during the final pattern transfer. In state-of-art literature, multi-layer awareness is achieved using simultaneous resist-contour simulations to predict and correct for hot-spots during mask generation. However, this approach assumes a uniform etch shrink response for all patterns independent of their proximity, which isn't sufficient for the full prevention of inter-exposure hot-spot, for example different color space violations post etch or via coverage/enclosure post etch. In this paper, we explain the need to include the etch component during multiple patterning OPC. We also introduce a novel approach for Etch-aware simultaneous Multiple-patterning OPC, where we calibrate and verify a lumped model that includes the combined resist and etch responses. Adding this extra simulation condition during OPC is suitable for full chip processing from a computation intensity point of view. Also, using this model during OPC to predict and correct inter-exposures hot-spots is similar to previously proposed multiple-patterning OPC, yet our proposed approach more accurately corrects post-etch defects too.

Integration of mask and silicon metrology in DFM

NASA Astrophysics Data System (ADS)

Matsuoka, Ryoichi; Mito, Hiroaki; Sugiyama, Akiyuki; Toyoda, Yasutaka

2009-03-01

We have developed a highly integrated method of mask and silicon metrology. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used in mask CD-SEM and silicon CD-SEM. We have inspected the high accuracy, stability and reproducibility in the experiments of integration. The accuracy is comparable with that of the mask and silicon CD-SEM metrology. In this report, we introduce the experimental results and the application. As shrinkage of design rule for semiconductor device advances, OPC (Optical Proximity Correction) goes aggressively dense in RET (Resolution Enhancement Technology). However, from the view point of DFM (Design for Manufacturability), the cost of data process for advanced MDP (Mask Data Preparation) and mask producing is a problem. Such trade-off between RET and mask producing is a big issue in semiconductor market especially in mask business. Seeing silicon device production process, information sharing is not completely organized between design section and production section. Design data created with OPC and MDP should be linked to process control on production. But design data and process control data are optimized independently. Thus, we provided a solution of DFM: advanced integration of mask metrology and silicon metrology. The system we propose here is composed of followings. 1) Design based recipe creation: Specify patterns on the design data for metrology. This step is fully automated since they are interfaced with hot spot coordinate information detected by various verification methods. 2) Design based image acquisition: Acquire the images of mask and silicon automatically by a recipe based on the pattern design of CD-SEM.It is a robust automated step because a wide range of design data is used for the image acquisition. 3) Contour profiling and GDS data generation: An image profiling process is applied to the acquired image based on the profiling method of the field proven CD metrology algorithm. The detected edges are then converted to GDSII format, which is a standard format for a design data, and utilized for various DFM systems such as simulation. Namely, by integrating pattern shapes of mask and silicon formed during a manufacturing process into GDSII format, it makes it possible to bridge highly accurate pattern profile information over to the design field of various EDA systems. These are fully integrated into design data and automated. Bi-directional cross probing between mask data and process control data is allowed by linking them. This method is a solution for total optimization that covers Design, MDP, mask production and silicon device producing. This method therefore is regarded as a strategic DFM approach in the semiconductor metrology.

75 FR 1527 - Airworthiness Directives; The Boeing Company Model 737-300, -400, and -500 Series Airplanes

Federal Register 2010, 2011, 2012, 2013, 2014

2010-01-12

... subsequent deployment of the oxygen masks. We are issuing this AD to detect and correct fatigue cracking of... deployment of the oxygen masks. We are issuing this AD to detect and correct fatigue cracking of the fuselage...

76 FR 9984 - Airworthiness Directives; B/E Aerospace, Continuous Flow Passenger Oxygen Mask Assembly, Part...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-02-23

..., Continuous Flow Passenger Oxygen Mask Assembly, Part Numbers 174006-(), 174080-(), 174085-(), 174095... manufacturer and part number of the oxygen mask assemblies installed, an inspection to determine the manufacturing date and modification status if certain oxygen mask assemblies are installed, and corrective...

An interference-based optical authentication scheme using two phase-only masks with different diffraction distances

NASA Astrophysics Data System (ADS)

Lu, Dajiang; He, Wenqi; Liao, Meihua; Peng, Xiang

2017-02-01

A new method to eliminate the security risk of the well-known interference-based optical cryptosystem is proposed. In this method, which is suitable for security authentication application, two phase-only masks are separately placed at different distances from the output plane, where a certification image (public image) can be obtained. To further increase the security and flexibility of this authentication system, we employ one more validation image (secret image), which can be observed at another output plane, for confirming the identity of the user. Only if the two correct masks are properly settled at their positions one could obtain two significant images. Besides, even if the legal users exchange their masks (keys), the authentication process will fail and the authentication results will not reveal any information. Numerical simulations are performed to demonstrate the validity and security of the proposed method.

Irradiation resistance of intravolume shading elements embedded in photomasks used for CD uniformity control by local intra-field transmission attenuation

NASA Astrophysics Data System (ADS)

Zait, Eitan; Ben-Zvi, Guy; Dmitriev, Vladimir; Oshemkov, Sergey; Pforr, Rainer; Hennig, Mario

2006-05-01

Intra-field CD variation is, besides OPC errors, a main contributor to the total CD variation budget in IC manufacturing. It is caused mainly by mask CD errors. In advanced memory device manufacturing the minimum features are close to the resolution limit resulting in large mask error enhancement factors hence large intra-field CD variations. Consequently tight CD Control (CDC) of the mask features is required, which results in increasing significantly the cost of mask and hence the litho process costs. Alternatively there is a search for such techniques (1) which will allow improving the intrafield CD control for a given moderate mask and scanner imaging performance. Currently a new technique (2) has been proposed which is based on correcting the printed CD by applying shading elements generated in the substrate bulk of the mask by ultrashort pulsed laser exposure. The blank transmittance across a feature is controlled by changing the density of light scattering pixels. The technique has been demonstrated to be very successful in correcting intra-field CD variations caused by the mask and the projection system (2). A key application criterion of this technique in device manufacturing is the stability of the absorbing pixels against DUV light irradiation being applied during mask projection in scanners. This paper describes the procedures and results of such an investigation. To do it with acceptable effort a special experimental setup has been chosen allowing an evaluation within reasonable time. A 193nm excimer laser with pulse duration of 25 ns has been used for blank irradiation. Accumulated dose equivalent to 100,000 300 mm wafer exposures has been applied to Half Tone PSM mask areas with and without CDC shadowing elements. This allows the discrimination of effects appearing in treated and untreated glass regions. Several intensities have been investigated to define an acceptable threshold intensity to avoid glass compaction or generation of color centers in the glass. The impact of the irradiation on the mask transmittance of both areas has been studied by measurements of the printed CD on wafer using a wafer scanner before and after DUV irradiation.

Challenges in process marginality for advanced technology nodes and tackling its contributors

NASA Astrophysics Data System (ADS)

Narayana Samy, Aravind; Schiwon, Roberto; Seltmann, Rolf; Kahlenberg, Frank; Katakamsetty, Ushasree

2013-10-01

Process margin is getting critical in the present node shrinkage scenario due to the physical limits reached (Rayleigh's criterion) using ArF lithography tools. K1 is used to its best for better resolution and to enhance the process margin (28nm metal patterning k1=0.31). In this paper, we would like to give an overview of various contributors in the advanced technology nodes which limit the process margins and how the challenges have been tackled in a modern foundry model. Advanced OPC algorithms are used to make the design content at the mask optimum for patterning. However, as we work at the physical limit, critical features (Hot-spots) are very susceptible to litho process variations. Furthermore, etch can have a significant impact as well. Pattern that still looks healthy at litho can fail due to etch interactions. This makes the traditional 2D contour output from ORC tools not able to predict accurately all defects and hence not able to fully correct it in the early mask tapeout phase. The above makes a huge difference in the fast ramp-up and high yield in a competitive foundry market. We will explain in this paper how the early introduction of 3D resist model based simulation of resist profiles (resist top-loss, bottom bridging, top-rounding, etc.,) helped in our prediction and correction of hot-spots in the early 28nm process development phase. The paper also discusses about the other overall process window reduction contributors due to mask 3D effects, wafer topography (focus shifts/variations) and how this has been addressed with different simulation efforts in a fast and timely manner.

Geometrical E-beam proximity correction for raster scan systems

NASA Astrophysics Data System (ADS)

Belic, Nikola; Eisenmann, Hans; Hartmann, Hans; Waas, Thomas

1999-04-01

High pattern fidelity is a basic requirement for the generation of masks containing sub micro structures and for direct writing. Increasing needs mainly emerging from OPC at mask level and x-ray lithography require a correction of the e-beam proximity effect. The most part of e-beam writers are raster scan system. This paper describes a new method for geometrical pattern correction in order to provide a correction solution for e-beam system that are not able to apply variable doses.

Scanner qualification with IntenCD based reticle error correction

NASA Astrophysics Data System (ADS)

Elblinger, Yair; Finders, Jo; Demarteau, Marcel; Wismans, Onno; Minnaert Janssen, Ingrid; Duray, Frank; Ben Yishai, Michael; Mangan, Shmoolik; Cohen, Yaron; Parizat, Ziv; Attal, Shay; Polonsky, Netanel; Englard, Ilan

2010-03-01

Scanner introduction into the fab production environment is a challenging task. An efficient evaluation of scanner performance matrices during factory acceptance test (FAT) and later on during site acceptance test (SAT) is crucial for minimizing the cycle time for pre and post production-start activities. If done effectively, the matrices of base line performance established during the SAT are used as a reference for scanner performance and fleet matching monitoring and maintenance in the fab environment. Key elements which can influence the cycle time of the SAT, FAT and maintenance cycles are the imaging, process and mask characterizations involved with those cycles. Discrete mask measurement techniques are currently in use to create across-mask CDU maps. By subtracting these maps from their final wafer measurement CDU map counterparts, it is possible to assess the real scanner induced printed errors within certain limitations. The current discrete measurement methods are time consuming and some techniques also overlook mask based effects other than line width variations, such as transmission and phase variations, all of which influence the final printed CD variability. Applied Materials Aera2TM mask inspection tool with IntenCDTM technology can scan the mask at high speed, offer full mask coverage and accurate assessment of all masks induced source of errors simultaneously, making it beneficial for scanner qualifications and performance monitoring. In this paper we report on a study that was done to improve a scanner introduction and qualification process using the IntenCD application to map the mask induced CD non uniformity. We will present the results of six scanners in production and discuss the benefits of the new method.

Analysis method to determine and characterize the mask mean-to-target and uniformity specification

NASA Astrophysics Data System (ADS)

Lee, Sung-Woo; Leunissen, Leonardus H. A.; Van de Kerkhove, Jeroen; Philipsen, Vicky; Jonckheere, Rik; Lee, Suk-Joo; Woo, Sang-Gyun; Cho, Han-Ku; Moon, Joo-Tae

2006-06-01

The specification of the mask mean-to-target (MTT) and uniformity is related to functions as: mask error enhancement factor, dose sensitivity and critical dimension (CD) tolerances. The mask MTT shows a trade-off relationship with the uniformity. Simulations for the mask MTT and uniformity (M-U) are performed for LOGIC devices of 45 and 37 nm nodes according to mask type, illumination condition and illuminator polarization state. CD tolerances and after develop inspection (ADI) target CD's in the simulation are taken from the 2004 ITRS roadmap. The simulation results allow for much smaller tolerances in the uniformity and larger offsets in the MTT than the values as given in the ITRS table. Using the parameters in the ITRS table, the mask uniformity contributes to nearly 95% of total CDU budget for the 45 nm node, and is even larger than the CDU specification of the ITRS for the 37 nm node. We also compared the simulation requirements with the current mask making capabilities. The current mask manufacturing status of the mask uniformity is barely acceptable for the 45 nm node, but requires process improvements towards future nodes. In particular, for the 37 nm node, polarized illumination is necessary to meet the ITRS requirements. The current mask linearity deviates for pitches smaller than 300 nm, which is not acceptable even for the 45 nm node. More efforts on the proximity correction method are required to improve the linearity behavior.

UDOF direct improvement by modulating mask absorber thickness

NASA Astrophysics Data System (ADS)

Yu, Tuan-Yen; Lio, En Chuan; Chen, Po Tsang; Wei, Chih I.; Chen, Yi Ting; Peng, Ming Chun; Chou, William; Yu, Chun Chi

2016-10-01

As the process generation migrate to advanced and smaller dimension or pitch, the mask and resist 3D effects will impact the lithography focus common window severely because of both individual depth-of-focus (iDOF) range decrease and center mismatch. Furthermore, some chemical or thermal factors, such as PEB (Post Exposure Bake) also worsen the usable depth-of-focus (uDOF) performance. So the mismatch of thru-pitch iDOF center should be considered as a lithography process integration issue, and more complicated to partition the 3D effects induced by optical or chemical factors. In order to reduce the impact of 3D effects induced by both optical and chemical issues, and improve iDOF center mismatch, we would like to propose a mask absorber thickness offset approach, which is directly to compensate the iDOF center bias by adjusting mask absorber thickness, for iso, semi-iso or dense characteristics in line, space or via patterns to enlarge common process window, i.e uDOF, which intends to provide similar application as Flexwave[1] (ASML trademark). By the way, since mask absorber thickness offset approach is similar to focus tuning or change on wafer lithography process, it could be acted as the process tuning method of photoresist (PR) profile optimization locally, PR scum improvement in specific patterns or to modulate etching bias to meet process integration request. For mass production consideration, and available material, current att-PSM blank, quartz, MoSi with chrome layer as hard-mask in reticle process, will be implemented in this experiment, i.e. chrome will be kept remaining above partial thru-pitch patterns, and act as the absorber thickness bias in different patterns. And then, from the best focus offset of thru-pitch patterns, the iDOF center shifts could be directly corrected and to enlarge uDOF by increasing the overlap of iDOF. Finally, some negative tone development (NTD) result in line patterns will be demonstrated as well.

Time-Course Contingencies in Perceptual Organization and Identification of Fragmented Object Outlines

ERIC Educational Resources Information Center

Panis, Sven; Wagemans, Johan

2009-01-01

To study the dynamic interplay between different component processes involved in the identification of fragmented object outlines, the authors used a discrete-identification paradigm in which the masked presentation duration of fragmented object outlines was repeatedly increased until correct naming occurred. Survival analysis was used to…

An open-architecture approach to defect analysis software for mask inspection systems

NASA Astrophysics Data System (ADS)

Pereira, Mark; Pai, Ravi R.; Reddy, Murali Mohan; Krishna, Ravi M.

2009-04-01

Industry data suggests that Mask Inspection represents the second biggest component of Mask Cost and Mask Turn Around Time (TAT). Ever decreasing defect size targets lead to more sensitive mask inspection across the chip, thus generating too many defects. Hence, more operator time is being spent in analyzing and disposition of defects. Also, the fact that multiple Mask Inspection Systems and Defect Analysis strategies would typically be in use in a Mask Shop or a Wafer Foundry further complicates the situation. In this scenario, there is a need for a versatile, user friendly and extensible Defect Analysis software that reduces operator analysis time and enables correct classification and disposition of mask defects by providing intuitive visual and analysis aids. We propose a new vendor-neutral defect analysis software, NxDAT, based on an open architecture. The open architecture of NxDAT makes it easily extensible to support defect analysis for mask inspection systems from different vendors. The capability to load results from mask inspection systems from different vendors either directly or through a common interface enables the functionality of establishing correlation between inspections carried out by mask inspection systems from different vendors. This capability of NxDAT enhances the effectiveness of defect analysis as it directly addresses the real-life scenario where multiple types of mask inspection systems from different vendors co-exist in mask shops or wafer foundries. The open architecture also potentially enables loading wafer inspection results as well as loading data from other related tools such as Review Tools, Repair Tools, CD-SEM tools etc, and correlating them with the corresponding mask inspection results. A unique concept of Plug-In interface to NxDAT further enhances the openness of the architecture of NxDAT by enabling end-users to add their own proprietary defect analysis and image processing algorithms. The plug-in interface makes it possible for the end-users to make use of their collected knowledge through the years of experience in mask inspection process by encapsulating the knowledge into software utilities and plugging them into NxDAT. The plug-in interface is designed with the intent of enabling the pro-active mask defect analysis teams to build competitive differentiation into their defect analysis process while protecting their knowledge internally within their company. By providing interface with all major standard layout and mask data formats, NxDAT enables correlation of defect data on reticles with design and mask databases, further extending the effectiveness of defect analysis for D2DB inspection. NxDAT also includes many other advanced features for easy and fast navigation, visual display of defects, defect selection, multi-tier classification, defect clustering and gridding, sophisticated CD and contact measurement analysis, repeatability analysis such as adder analysis, defect trend, capture rate etc.

Associative priming in a masked perceptual identification task: evidence for automatic processes.

PubMed

Pecher, Diane; Zeelenberg, René; Raaijmakers, Jeroen G W

2002-10-01

Two experiments investigated the influence of automatic and strategic processes on associative priming effects in a perceptual identification task in which prime-target pairs are briefly presented and masked. In this paradigm, priming is defined as a higher percentage of correctly identified targets for related pairs than for unrelated pairs. In Experiment 1, priming was obtained for mediated word pairs. This mediated priming effect was affected neither by the presence of direct associations nor by the presentation time of the primes, indicating that automatic priming effects play a role in perceptual identification. Experiment 2 showed that the priming effect was not affected by the proportion (.90 vs. .10) of related pairs if primes were presented briefly to prevent their identification. However, a large proportion effect was found when primes were presented for 1000 ms so that they were clearly visible. These results indicate that priming in a masked perceptual identification task is the result of automatic processes and is not affected by strategies. The present paradigm provides a valuable alternative to more commonly used tasks such as lexical decision.

Near Real-Time Image Reconstruction

NASA Astrophysics Data System (ADS)

Denker, C.; Yang, G.; Wang, H.

2001-08-01

In recent years, post-facto image-processing algorithms have been developed to achieve diffraction-limited observations of the solar surface. We present a combination of frame selection, speckle-masking imaging, and parallel computing which provides real-time, diffraction-limited, 256×256 pixel images at a 1-minute cadence. Our approach to achieve diffraction limited observations is complementary to adaptive optics (AO). At the moment, AO is limited by the fact that it corrects wavefront abberations only for a field of view comparable to the isoplanatic patch. This limitation does not apply to speckle-masking imaging. However, speckle-masking imaging relies on short-exposure images which limits its spectroscopic applications. The parallel processing of the data is performed on a Beowulf-class computer which utilizes off-the-shelf, mass-market technologies to provide high computational performance for scientific calculations and applications at low cost. Beowulf computers have a great potential, not only for image reconstruction, but for any kind of complex data reduction. Immediate access to high-level data products and direct visualization of dynamic processes on the Sun are two of the advantages to be gained.

A novel method for fabrication of continuous-relief optical elements

NASA Astrophysics Data System (ADS)

Guo, Xiaowei; Du, Jinglei; Chen, Mingyong; Ma, Yanqin; Zhu, Jianhua; Peng, Qinjun; Guo, Yongkang; Du, Chunlei

2005-08-01

A novel method for the fabrication of continuous micro-optical components is presented in this paper. It employs a computer controlled spatial-light-modulator (SLM) as a switchable projection mask and silver-halide sensitized gelatin (SHSG) as recording material. By etching SHSG with enzyme solution, the micro-optical components with relief modulation can be generated through special processing procedures. The principles of digital SLM-based lithography and enzyme etching SHSG are discussed in detail, and microlens arrays, micro axicon-lens arrays and gratings with good profile were achieved. This method is simple, cheap and the aberration in processing procedures can be in-situ corrected in the step of designing mask, so it is a practical method to fabricate continuous profile for low-volume production.

Masked areas in shear peak statistics. A forward modeling approach

DOE PAGES

Bard, D.; Kratochvil, J. M.; Dawson, W.

2016-03-09

The statistics of shear peaks have been shown to provide valuable cosmological information beyond the power spectrum, and will be an important constraint of models of cosmology in forthcoming astronomical surveys. Surveys include masked areas due to bright stars, bad pixels etc., which must be accounted for in producing constraints on cosmology from shear maps. We advocate a forward-modeling approach, where the impacts of masking and other survey artifacts are accounted for in the theoretical prediction of cosmological parameters, rather than correcting survey data to remove them. We use masks based on the Deep Lens Survey, and explore the impactmore » of up to 37% of the survey area being masked on LSST and DES-scale surveys. By reconstructing maps of aperture mass the masking effect is smoothed out, resulting in up to 14% smaller statistical uncertainties compared to simply reducing the survey area by the masked area. We show that, even in the presence of large survey masks, the bias in cosmological parameter estimation produced in the forward-modeling process is ≈1%, dominated by bias caused by limited simulation volume. We also explore how this potential bias scales with survey area and evaluate how much small survey areas are impacted by the differences in cosmological structure in the data and simulated volumes, due to cosmic variance.« less

MASKED AREAS IN SHEAR PEAK STATISTICS: A FORWARD MODELING APPROACH

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bard, D.; Kratochvil, J. M.; Dawson, W., E-mail: djbard@slac.stanford.edu

2016-03-10

The statistics of shear peaks have been shown to provide valuable cosmological information beyond the power spectrum, and will be an important constraint of models of cosmology in forthcoming astronomical surveys. Surveys include masked areas due to bright stars, bad pixels etc., which must be accounted for in producing constraints on cosmology from shear maps. We advocate a forward-modeling approach, where the impacts of masking and other survey artifacts are accounted for in the theoretical prediction of cosmological parameters, rather than correcting survey data to remove them. We use masks based on the Deep Lens Survey, and explore the impactmore » of up to 37% of the survey area being masked on LSST and DES-scale surveys. By reconstructing maps of aperture mass the masking effect is smoothed out, resulting in up to 14% smaller statistical uncertainties compared to simply reducing the survey area by the masked area. We show that, even in the presence of large survey masks, the bias in cosmological parameter estimation produced in the forward-modeling process is ≈1%, dominated by bias caused by limited simulation volume. We also explore how this potential bias scales with survey area and evaluate how much small survey areas are impacted by the differences in cosmological structure in the data and simulated volumes, due to cosmic variance.« less

New method of contour-based mask-shape compiler

NASA Astrophysics Data System (ADS)

Matsuoka, Ryoichi; Sugiyama, Akiyuki; Onizawa, Akira; Sato, Hidetoshi; Toyoda, Yasutaka

2007-10-01

We have developed a new method of accurately profiling a mask shape by utilizing a Mask CD-SEM. The method is intended to realize high accuracy, stability and reproducibility of the Mask CD-SEM adopting an edge detection algorithm as the key technology used in CD-SEM for high accuracy CD measurement. In comparison with a conventional image processing method for contour profiling, it is possible to create the profiles with much higher accuracy which is comparable with CD-SEM for semiconductor device CD measurement. In this report, we will introduce the algorithm in general, the experimental results and the application in practice. As shrinkage of design rule for semiconductor device has further advanced, an aggressive OPC (Optical Proximity Correction) is indispensable in RET (Resolution Enhancement Technology). From the view point of DFM (Design for Manufacturability), a dramatic increase of data processing cost for advanced MDP (Mask Data Preparation) for instance and surge of mask making cost have become a big concern to the device manufacturers. In a sense, it is a trade-off between the high accuracy RET and the mask production cost, while it gives a significant impact on the semiconductor market centered around the mask business. To cope with the problem, we propose the best method for a DFM solution in which two dimensional data are extracted for an error free practical simulation by precise reproduction of a real mask shape in addition to the mask data simulation. The flow centering around the design data is fully automated and provides an environment where optimization and verification for fully automated model calibration with much less error is available. It also allows complete consolidation of input and output functions with an EDA system by constructing a design data oriented system structure. This method therefore is regarded as a strategic DFM approach in the semiconductor metrology.

Mask patterning process using the negative tone chemically amplified resist TOK OEBR-CAN024

NASA Astrophysics Data System (ADS)

Irmscher, Mathias; Beyer, Dirk; Butschke, Joerg; Hudek, Peter; Koepernik, Corinna; Plumhoff, Jason; Rausa, Emmanuel; Sato, Mitsuru; Voehringer, Peter

2004-08-01

Optimized process parameters using the TOK OEBR-CAN024 resist for high chrome load patterning have been determined. A tight linearity tolerance for opaque and clear features, independent on the local pattern density, was the goal of our process integration work. For this purpose we evaluated a new correction method taking into account electron scattering and process influences. The method is based on matching of measured pattern geometry by iterative back-simulation using multiple Gauss and/or exponential functions. The obtained control function acts as input for the proximity correction software PROXECCO. Approaches with different pattern oversize and two Cr thicknesses were accomplished and the results have been reported. Isolated opaque and clear lines could be realized in a very tight linearity range. The increasing line width of small dense lines, induced by the etching process, could be corrected only partially.

Evaluation of setup uncertainties for single-fraction SRS by comparing two different mask-creation methods

NASA Astrophysics Data System (ADS)

Baek, Jong Geun; Jang, Hyun Soo; Oh, Young Kee; Lee, Hyun Jeong; Kim, Eng Chan

2015-07-01

The purpose of this study was to evaluate the setup uncertainties for single-fraction stereotactic radiosurgery (SF-SRS) based on clinical data with two different mask-creation methods using pretreatment con-beam computed tomography imaging guidance. Dedicated frameless fixation Brain- LAB masks for 23 patients were created as a routine mask (R-mask) making method, as explained in the BrainLAB's user manual. Alternative masks (A-masks), which were created by modifying the cover range of the R-masks for the patient's head, were used for 23 patients. The systematic errors including these for each mask and stereotactic target localizer were analyzed, and the errors were calculated as the means ± standard deviations (SD) from the left-right (LR), superior-inferior (SI), anterior-posterior (AP), and yaw setup corrections. In addition, the frequencies of the threedimensional (3D) vector length were analyzed. The values of the mean setup corrections for the R-mask in all directions were < 0.7 mm and < 0.1°, whereas the magnitudes of the SDs were relatively large compared to the mean values. In contrast, the means and SDs of the A-mask were smaller than those for the R-mask with the exception of the SD in the AP direction. The means and SDs in the yaw rotational direction for the R-mask and the A-mask system were comparable. 3D vector shifts of larger magnitude occurred more frequently for the R-mask than the A-mask. The setup uncertainties for each mask with the stereotactic localizing system had an asymmetric offset towards the positive AP direction. The A-mask-creation method, which is capable of covering the top of the patient's head, is superior to that for the R-mask, so the use of the A-mask is encouraged for SF-SRS to reduce the setup uncertainties. Moreover, careful mask-making is required to prevent possible setup uncertainties.

Sex differences in neural responses to subliminal sad and happy faces in healthy individuals: Implications for depression.

PubMed

Victor, Teresa A; Drevets, Wayne C; Misaki, Masaya; Bodurka, Jerzy; Savitz, Jonathan

2017-01-02

Twice as many women as men suffer from mood and anxiety disorders, yet the biological underpinnings of this phenomenon have been understudied and remain unclear. We and others have shown that the hemodynamic response to subliminally presented sad or happy faces during functional MRI (fMRI) is a robust biomarker for the attentional bias toward negative information classically observed in major depression. Here we used fMRI to compare the performance of healthy females (n = 28) and healthy males (n = 28) on a backward masking task using a fast event-related design with gradient-recalled, echoplanar imaging with sensitivity encoding. The image data were compared across groups using a region-of-interest analysis with small-volume correction to control for multiple testing (P corrected  < 0.05, cluster size ≥ 20 voxels). Notably, compared with males, females showed greater BOLD activity in the subgenual anterior cingulate cortex (sgACC) and the right hippocampus when viewing masked sad vs. masked happy faces. Furthermore, females displayed reduced BOLD activity in the right pregenual ACC and left amygdala when viewing masked happy vs. masked neutral faces. Given that we have previously reported similar findings for depressed participants compared with healthy controls (regardless of gender), our results raise the possibility that on average healthy females show subtle emotional processing biases that conceivably reflect a subgroup of women predisposed to depression. Nevertheless, we note that the differences between males and females were small and derived from region-of-interest rather than voxelwise analyses. © 2016 Wiley Periodicals, Inc. © 2016 Wiley Periodicals, Inc.

Photorefractive keratectomy (PRK) at 193 nm using an erodible mask: new developments and clinical progress

NASA Astrophysics Data System (ADS)

Gordon, Michael; Seiler, Theo; Carey, Joseph P.; Friedman, Marc D.; Johnsson, N. M. F.; King, Michael C.; Muller, David F.

1993-06-01

This paper reports on our progress using an erodible mask to perform photorefractive keratectomy (PRK) for the correction of myopic astigmatism. We describe modifications to the mask, the mask eye cup and the surgical microscope aimed at simplifying the procedure and improving the ergonomics of the hardware. We report the clinical results of the post-op exam for 20 patients who have undergone PRK for myopic astigmatism under a Phase IIA study. The results compare favorably with an earlier Phase IIA study for performing PRK with a computer-controlled iris. Most important, the clinical data show the absence of any significant corneal haze and no significant decrease in spectacle corrected visual acuity. Although more long term follow-up is needed, the preliminary results support the safety and effectiveness of using an erodible mask to perform PRK for myopic astigmatism.

An economic analysis for optimal distributed computing resources for mask synthesis and tape-out in production environment

NASA Astrophysics Data System (ADS)

Cork, Chris; Lugg, Robert; Chacko, Manoj; Levi, Shimon

2005-06-01

With the exponential increase in output database size due to the aggressive optical proximity correction (OPC) and resolution enhancement technique (RET) required for deep sub-wavelength process nodes, the CPU time required for mask tape-out continues to increase significantly. For integrated device manufacturers (IDMs), this can impact the time-to-market for their products where even a few days delay could have a huge commercial impact and loss of market window opportunity. For foundries, a shorter turnaround time provides a competitive advantage in their demanding market, too slow could mean customers looking elsewhere for these services; while a fast turnaround may even command a higher price. With FAB turnaround of a mature, plain-vanilla CMOS process of around 20-30 days, a delay of several days in mask tapeout would contribute a significant fraction to the total time to deliver prototypes. Unlike silicon processing, masks tape-out time can be decreased by simply purchasing extra computing resources and software licenses. Mask tape-out groups are taking advantage of the ever-decreasing hardware cost and increasing power of commodity processors. The significant distributability inherent in some commercial Mask Synthesis software can be leveraged to address this critical business issue. Different implementations have different fractions of the code that cannot be parallelized and this affects the efficiency with which it scales, as is described by Amdahl"s law. Very few are efficient enough to allow the effective use of 1000"s of processors, enabling run times to drop from days to only minutes. What follows is a cost aware methodology to quantify the scalability of this class of software, and thus act as a guide to estimating the optimal investment in terms of hardware and software licenses.

CDO budgeting

NASA Astrophysics Data System (ADS)

Nesladek, Pavel; Wiswesser, Andreas; Sass, Björn; Mauermann, Sebastian

2008-04-01

The Critical dimension off-target (CDO) is a key parameter for mask house customer, affecting directly the performance of the mask. The CDO is the difference between the feature size target and the measured feature size. The change of CD during the process is either compensated within the process or by data correction. These compensation methods are commonly called process bias and data bias, respectively. The difference between data bias and process bias in manufacturing results in systematic CDO error, however, this systematic error does not take into account the instability of the process bias. This instability is a result of minor variations - instabilities of manufacturing processes and changes in materials and/or logistics. Using several masks the CDO of the manufacturing line can be estimated. For systematic investigation of the unit process contribution to CDO and analysis of the factors influencing the CDO contributors, a solid understanding of each unit process and huge number of masks is necessary. Rough identification of contributing processes and splitting of the final CDO variation between processes can be done with approx. 50 masks with identical design, material and process. Such amount of data allows us to identify the main contributors and estimate the effect of them by means of Analysis of variance (ANOVA) combined with multivariate analysis. The analysis does not provide information about the root cause of the variation within the particular unit process, however, it provides a good estimate of the impact of the process on the stability of the manufacturing line. Additionally this analysis can be used to identify possible interaction between processes, which cannot be investigated if only single processes are considered. Goal of this work is to evaluate limits for CDO budgeting models given by the precision and the number of measurements as well as partitioning the variation within the manufacturing process. The CDO variation splits according to the suggested model into contributions from particular processes or process groups. Last but not least the power of this method to determine the absolute strength of each parameter will be demonstrated. Identification of the root cause of this variation within the unit process itself is not scope of this work.

78 FR 42893 - Airworthiness Directives; Bombardier, Inc. Airplanes

Federal Register 2010, 2011, 2012, 2013, 2014

2013-07-18

... the passenger oxygen masks are longer than the specified length, possibly leading to inactive oxygen masks in an emergency. This proposed AD would require replacing certain oxygen mask lanyards. We propose this AD to detect and correct lanyards of incorrect length, which might not activate the flow of oxygen...

Interleaved segment correction achieves higher improvement factors in using genetic algorithm to optimize light focusing through scattering media

NASA Astrophysics Data System (ADS)

Li, Runze; Peng, Tong; Liang, Yansheng; Yang, Yanlong; Yao, Baoli; Yu, Xianghua; Min, Junwei; Lei, Ming; Yan, Shaohui; Zhang, Chunmin; Ye, Tong

2017-10-01

Focusing and imaging through scattering media has been proved possible with high resolution wavefront shaping. A completely scrambled scattering field can be corrected by applying a correction phase mask on a phase only spatial light modulator (SLM) and thereby the focusing quality can be improved. The correction phase is often found by global searching algorithms, among which Genetic Algorithm (GA) stands out for its parallel optimization process and high performance in noisy environment. However, the convergence of GA slows down gradually with the progression of optimization, causing the improvement factor of optimization to reach a plateau eventually. In this report, we propose an interleaved segment correction (ISC) method that can significantly boost the improvement factor with the same number of iterations comparing with the conventional all segment correction method. In the ISC method, all the phase segments are divided into a number of interleaved groups; GA optimization procedures are performed individually and sequentially among each group of segments. The final correction phase mask is formed by applying correction phases of all interleaved groups together on the SLM. The ISC method has been proved significantly useful in practice because of its ability to achieve better improvement factors when noise is present in the system. We have also demonstrated that the imaging quality is improved as better correction phases are found and applied on the SLM. Additionally, the ISC method lowers the demand of dynamic ranges of detection devices. The proposed method holds potential in applications, such as high-resolution imaging in deep tissue.

Improving 130nm node patterning using inverse lithography techniques for an analog process

NASA Astrophysics Data System (ADS)

Duan, Can; Jessen, Scott; Ziger, David; Watanabe, Mizuki; Prins, Steve; Ho, Chi-Chien; Shu, Jing

2018-03-01

Developing a new lithographic process routinely involves usage of lithographic toolsets and much engineering time to perform data analysis. Process transfers between fabs occur quite often. One of the key assumptions made is that lithographic settings are equivalent from one fab to another and that the transfer is fluid. In some cases, that is far from the truth. Differences in tools can change the proximity effect seen in low k1 imaging processes. If you use model based optical proximity correction (MBOPC), then a model built in one fab will not work under the same conditions at another fab. This results in many wafers being patterned to try and match a baseline response. Even if matching is achieved, there is no guarantee that optimal lithographic responses are met. In this paper, we discuss the approach used to transfer and develop new lithographic processes and define MBOPC builds for the new lithographic process in Fab B which was transferred from a similar lithographic process in Fab A. By using PROLITHTM simulations to match OPC models for each level, minimal downtime in wafer processing was observed. Source Mask Optimization (SMO) was also used to optimize lithographic processes using novel inverse lithography techniques (ILT) to simultaneously optimize mask bias, depth of focus (DOF), exposure latitude (EL) and mask error enhancement factor (MEEF) for critical designs for each level.

In-die mask registration measurement on 28nm-node and beyond

NASA Astrophysics Data System (ADS)

Chen, Shen Hung; Cheng, Yung Feng; Chen, Ming Jui

2013-09-01

As semiconductor go to smaller node, the critical dimension (CD) of process become more and more small. For lithography, RET (Resolution Enhancement Technology) applications can be used for wafer printing of smaller CD/pitch on 28nm node and beyond. SMO (Source Mask Optimization), DPT (Double Patterning Technology) and SADP (Self-Align Double Patterning) can provide lower k1 value for lithography. In another way, image placement error and overlay control also become more and more important for smaller chip size (advanced node). Mask registration (image placement error) and mask overlay are important factors to affect wafer overlay control/performance especially for DPT or SADP. In traditional method, the designed registration marks (cross type, square type) with larger CD were put into scribe-line of mask frame for registration and overlay measurement. However, these patterns are far way from real patterns. It does not show the registration of real pattern directly and is not a convincing method. In this study, the in-die (in-chip) registration measurement is introduced. We extract the dummy patterns that are close to main pattern from post-OPC (Optical Proximity Correction) gds by our desired rule and choose the patterns that distribute over whole mask uniformly. The convergence test shows 100 points measurement has a reliable result.

Preparation of orally disintegrating tablets with taste-masking function: masking effect in granules prepared with correctives using the dry granulation method and evaluation of tablets prepared using the taste-masked granules.

PubMed

Kawano, Yayoi; Ito, Akihiko; Sasatsu, Masanaho; Machida, Yoshiharu

2010-01-01

We investigated several methods of taste masking in the preparation of orally disintegrating tablets (ODTs), using furosemide (FU) as a model drug. Four types of FU preparations were prepared: granules with maltitol (MA), granules with yogurt powder (YO), a physical mixture of FU and MA, and a physical mixture of FU and YO. All taste-masking granules were prepared using the dry granulation method. The taste of each type of preparation was evaluated. All four preparations markedly improved the taste of the FU tablets, but the mixing ratios of the correctives did not affect the masking effect. No difference in masking effect was found between MA and YO in the physical mixtures, but the masking effect in the granules with YO was superior to that of the granules with MA. Taste-masked FU tablets were prepared using the direct compression method; crystalline cellulose (Avicel PH-302) and mannitol were added as excipients at the mixing ratio of 1/1. All four types of tablets displayed sufficient hardness, but MA-containing tablets were harder than YO-containing tablets. The hardness of the tablets prepared from YO granules increased as the YO content increased. The most rapidly disintegrating tablets were those of YO granules prepared at a mixing ratio of FU/YO=1/1, which disintegrated within 20 s, followed by the tablets of MA granules prepared at a mixing ratio of FU/MA=1/1. The disintegration times of the tablets made from physical mixtures, in contrast, were longer than 200 s. Disintegration time lengthened as the mixing ratio of YO or MA increased. The hardness and disintegration time of these tablets could be controlled by varying the compression pressure. We found that YO is more useful than MA in masking unpleasant tastes and confirmed that orally disintegrating tablets with taste-masking function can be prepared using granules of YO prepared using the dry granulation method as a new corrective.

Atmospheric Correction at AERONET Locations: A New Science and Validation Data Set

NASA Technical Reports Server (NTRS)

Wang, Yujie; Lyapustin, Alexei; Privette, Jeffery L.; Morisette, Jeffery T.; Holben, Brent

2008-01-01

This paper describes an AERONET-based Surface Reflectance Validation Network (ASRVN) and its dataset of spectral surface bidirectional reflectance and albedo based on MODIS TERRA and AQUA data. The ASRVN is an operational data collection and processing system. It receives 50x50 square kilometer subsets of MODIS L1B data from MODAPS and AERONET aerosol and water vapor information. Then it performs an accurate atmospheric correction for about 100 AERONET sites based on accurate radiative transfer theory with high quality control of the input data. The ASRVN processing software consists of L1B data gridding algorithm, a new cloud mask algorithm based on a time series analysis, and an atmospheric correction algorithm. The atmospheric correction is achieved by fitting the MODIS top of atmosphere measurements, accumulated for 16-day interval, with theoretical reflectance parameterized in terms of coefficients of the LSRT BRF model. The ASRVN takes several steps to ensure high quality of results: 1) cloud mask algorithm filters opaque clouds; 2) an aerosol filter has been developed to filter residual semi-transparent and sub-pixel clouds, as well as cases with high inhomogeneity of aerosols in the processing area; 3) imposing requirement of consistency of the new solution with previously retrieved BRF and albedo; 4) rapid adjustment of the 16-day retrieval to the surface changes using the last day of measurements; and 5) development of seasonal back-up spectral BRF database to increase data coverage. The ASRVN provides a gapless or near-gapless coverage for the processing area. The gaps, caused by clouds, are filled most naturally with the latest solution for a given pixels. The ASRVN products include three parameters of LSRT model (k(sup L), k(sup G), k(sup V)), surface albedo, NBRF (a normalized BRF computed for a standard viewing geometry, VZA=0 deg., SZA=45 deg.), and IBRF (instantaneous, or one angle, BRF value derived from the last day of MODIS measurement for specific viewing geometry) for MODIS 500m bands 1-7. The results are produced daily at resolution of 1 km in gridded format. We also provide cloud mask, quality flag and a browse bitmap image. The new dataset can be used for a wide range of applications including validation analysis and science research.

An Automatic Cloud Mask Algorithm Based on Time Series of MODIS Measurements

NASA Technical Reports Server (NTRS)

Lyapustin, Alexei; Wang, Yujie; Frey, R.

2008-01-01

Quality of aerosol retrievals and atmospheric correction depends strongly on accuracy of the cloud mask (CM) algorithm. The heritage CM algorithms developed for AVHRR and MODIS use the latest sensor measurements of spectral reflectance and brightness temperature and perform processing at the pixel level. The algorithms are threshold-based and empirically tuned. They don't explicitly address the classical problem of cloud search, wherein the baseline clear-skies scene is defined for comparison. Here, we report on a new CM algorithm which explicitly builds and maintains a reference clear-skies image of the surface (refcm) using a time series of MODIS measurements. The new algorithm, developed as part of the Multi-Angle Implementation of Atmospheric Correction (MAIAC) algorithm for MODIS, relies on fact that clear-skies images of the same surface area have a common textural pattern, defined by the surface topography, boundaries of rivers and lakes, distribution of soils and vegetation etc. This pattern changes slowly given the daily rate of global Earth observations, whereas clouds introduce high-frequency random disturbances. Under clear skies, consecutive gridded images of the same surface area have a high covariance, whereas in presence of clouds covariance is usually low. This idea is central to initialization of refcm which is used to derive cloud mask in combination with spectral and brightness temperature tests. The refcm is continuously updated with the latest clear-skies MODIS measurements, thus adapting to seasonal and rapid surface changes. The algorithm is enhanced by an internal dynamic land-water-snow classification coupled with a surface change mask. An initial comparison shows that the new algorithm offers the potential to perform better than the MODIS MOD35 cloud mask in situations where the land surface is changing rapidly, and over Earth regions covered by snow and ice.

Cupping artifact correction and automated classification for high-resolution dedicated breast CT images.

PubMed

Yang, Xiaofeng; Wu, Shengyong; Sechopoulos, Ioannis; Fei, Baowei

2012-10-01

To develop and test an automated algorithm to classify the different tissues present in dedicated breast CT images. The original CT images are first corrected to overcome cupping artifacts, and then a multiscale bilateral filter is used to reduce noise while keeping edge information on the images. As skin and glandular tissues have similar CT values on breast CT images, morphologic processing is used to identify the skin mask based on its position information. A modified fuzzy C-means (FCM) classification method is then used to classify breast tissue as fat and glandular tissue. By combining the results of the skin mask with the FCM, the breast tissue is classified as skin, fat, and glandular tissue. To evaluate the authors' classification method, the authors use Dice overlap ratios to compare the results of the automated classification to those obtained by manual segmentation on eight patient images. The correction method was able to correct the cupping artifacts and improve the quality of the breast CT images. For glandular tissue, the overlap ratios between the authors' automatic classification and manual segmentation were 91.6% ± 2.0%. A cupping artifact correction method and an automatic classification method were applied and evaluated for high-resolution dedicated breast CT images. Breast tissue classification can provide quantitative measurements regarding breast composition, density, and tissue distribution.

Cupping artifact correction and automated classification for high-resolution dedicated breast CT images

PubMed Central

Yang, Xiaofeng; Wu, Shengyong; Sechopoulos, Ioannis; Fei, Baowei

2012-01-01

Purpose: To develop and test an automated algorithm to classify the different tissues present in dedicated breast CT images. Methods: The original CT images are first corrected to overcome cupping artifacts, and then a multiscale bilateral filter is used to reduce noise while keeping edge information on the images. As skin and glandular tissues have similar CT values on breast CT images, morphologic processing is used to identify the skin mask based on its position information. A modified fuzzy C-means (FCM) classification method is then used to classify breast tissue as fat and glandular tissue. By combining the results of the skin mask with the FCM, the breast tissue is classified as skin, fat, and glandular tissue. To evaluate the authors’ classification method, the authors use Dice overlap ratios to compare the results of the automated classification to those obtained by manual segmentation on eight patient images. Results: The correction method was able to correct the cupping artifacts and improve the quality of the breast CT images. For glandular tissue, the overlap ratios between the authors’ automatic classification and manual segmentation were 91.6% ± 2.0%. Conclusions: A cupping artifact correction method and an automatic classification method were applied and evaluated for high-resolution dedicated breast CT images. Breast tissue classification can provide quantitative measurements regarding breast composition, density, and tissue distribution. PMID:23039675

Vectorial mask optimization methods for robust optical lithography

NASA Astrophysics Data System (ADS)

Ma, Xu; Li, Yanqiu; Guo, Xuejia; Dong, Lisong; Arce, Gonzalo R.

2012-10-01

Continuous shrinkage of critical dimension in an integrated circuit impels the development of resolution enhancement techniques for low k1 lithography. Recently, several pixelated optical proximity correction (OPC) and phase-shifting mask (PSM) approaches were developed under scalar imaging models to account for the process variations. However, the lithography systems with larger-NA (NA>0.6) are predominant for current technology nodes, rendering the scalar models inadequate to describe the vector nature of the electromagnetic field that propagates through the optical lithography system. In addition, OPC and PSM algorithms based on scalar models can compensate for wavefront aberrations, but are incapable of mitigating polarization aberrations in practical lithography systems, which can only be dealt with under the vector model. To this end, we focus on developing robust pixelated gradient-based OPC and PSM optimization algorithms aimed at canceling defocus, dose variation, wavefront and polarization aberrations under a vector model. First, an integrative and analytic vector imaging model is applied to formulate the optimization problem, where the effects of process variations are explicitly incorporated in the optimization framework. A steepest descent algorithm is then used to iteratively optimize the mask patterns. Simulations show that the proposed algorithms can effectively improve the process windows of the optical lithography systems.

Optimized distributed computing environment for mask data preparation

NASA Astrophysics Data System (ADS)

Ahn, Byoung-Sup; Bang, Ju-Mi; Ji, Min-Kyu; Kang, Sun; Jang, Sung-Hoon; Choi, Yo-Han; Ki, Won-Tai; Choi, Seong-Woon; Han, Woo-Sung

2005-11-01

As the critical dimension (CD) becomes smaller, various resolution enhancement techniques (RET) are widely adopted. In developing sub-100nm devices, the complexity of optical proximity correction (OPC) is severely increased and applied OPC layers are expanded to non-critical layers. The transformation of designed pattern data by OPC operation causes complexity, which cause runtime overheads to following steps such as mask data preparation (MDP), and collapse of existing design hierarchy. Therefore, many mask shops exploit the distributed computing method in order to reduce the runtime of mask data preparation rather than exploit the design hierarchy. Distributed computing uses a cluster of computers that are connected to local network system. However, there are two things to limit the benefit of the distributing computing method in MDP. First, every sequential MDP job, which uses maximum number of available CPUs, is not efficient compared to parallel MDP job execution due to the input data characteristics. Second, the runtime enhancement over input cost is not sufficient enough since the scalability of fracturing tools is limited. In this paper, we will discuss optimum load balancing environment that is useful in increasing the uptime of distributed computing system by assigning appropriate number of CPUs for each input design data. We will also describe the distributed processing (DP) parameter optimization to obtain maximum throughput in MDP job processing.

Model-based correction for local stress-induced overlay errors

NASA Astrophysics Data System (ADS)

Stobert, Ian; Krishnamurthy, Subramanian; Shi, Hongbo; Stiffler, Scott

2018-03-01

Manufacturing embedded DRAM deep trench capacitors can involve etching very deep holes into silicon wafers1. Due to various design constraints, these holes may not be uniformly distributed across the wafer surface. Some wafer processing steps for these trenches results in stress effects which can distort the silicon wafer in a manner that creates localized alignment issues between the trenches and the structures built above them on the wafer. In this paper, we describe a method to model these localized silicon distortions for complex layouts involving billions of deep trench structures. We describe wafer metrology techniques and data which have been used to verify the stress distortion model accuracy. We also provide a description of how this kind of model can be used to manipulate the polygons in the mask tape out flow to compensate for predicted localized misalignments between design shapes from a deep trench mask and subsequent masks.

Method for characterizing mask defects using image reconstruction from X-ray diffraction patterns

DOEpatents

Hau-Riege, Stefan Peter [Fremont, CA

2007-05-01

The invention applies techniques for image reconstruction from X-ray diffraction patterns on the three-dimensional imaging of defects in EUVL multilayer films. The reconstructed image gives information about the out-of-plane position and the diffraction strength of the defect. The positional information can be used to select the correct defect repair technique. This invention enables the fabrication of defect-free (since repaired) X-ray Mo--Si multilayer mirrors. Repairing Mo--Si multilayer-film defects on mask blanks is a key for the commercial success of EUVL. It is known that particles are added to the Mo--Si multilayer film during the fabrication process. There is a large effort to reduce this contamination, but results are not sufficient, and defects continue to be a major mask yield limiter. All suggested repair strategies need to know the out-of-plane position of the defects in the multilayer.

Development for 2D pattern quantification method on mask and wafer

NASA Astrophysics Data System (ADS)

Matsuoka, Ryoichi; Mito, Hiroaki; Toyoda, Yasutaka; Wang, Zhigang

2010-03-01

We have developed the effective method of mask and silicon 2-dimensional metrology. The aim of this method is evaluating the performance of the silicon corresponding to Hotspot on a mask. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used in mask CD-SEM and silicon CD-SEM. Currently, as semiconductor manufacture moves towards even smaller feature size, this necessitates more aggressive optical proximity correction (OPC) to drive the super-resolution technology (RET). In other words, there is a trade-off between highly precise RET and mask manufacture, and this has a big impact on the semiconductor market that centers on the mask business. 2-dimensional Shape quantification is important as optimal solution over these problems. Although 1-dimensional shape measurement has been performed by the conventional technique, 2-dimensional shape management is needed in the mass production line under the influence of RET. We developed the technique of analyzing distribution of shape edge performance as the shape management technique. On the other hand, there is roughness in the silicon shape made from a mass-production line. Moreover, there is variation in the silicon shape. For this reason, quantification of silicon shape is important, in order to estimate the performance of a pattern. In order to quantify, the same shape is equalized in two dimensions. And the method of evaluating based on the shape is popular. In this study, we conducted experiments for averaging method of the pattern (Measurement Based Contouring) as two-dimensional mask and silicon evaluation technique. That is, observation of the identical position of a mask and a silicon was considered. It is possible to analyze variability of the edge of the same position with high precision. The result proved its detection accuracy and reliability of variability on two-dimensional pattern (mask and silicon) and is adaptable to following fields of mask quality management. - Estimate of the correlativity of shape variability and a process margin. - Determination of two-dimensional variability of pattern. - Verification of the performance of the pattern of various kinds of Hotspots. In this report, we introduce the experimental results and the application. We expect that the mask measurement and the shape control on mask production will make a huge contribution to mask yield-enhancement and that the DFM solution for mask quality control process will become much more important technology than ever. It is very important to observe the shape of the same location of Design, Mask, and Silicon in such a viewpoint.

A review of nanoimprint lithography for high-volume semiconductor device manufacturing

NASA Astrophysics Data System (ADS)

Resnick, Douglas J.; Choi, Jin

2017-06-01

Imprint lithography has been shown to be a promising technique for the replication of nanoscale features. Jet and flash imprint lithography (J-FIL) [jet and flash imprint lithography and J-FIL are trademarks of Molecular Imprints, Inc.] involves the field-by-field deposition and exposure of a low-viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid, which then quickly flows into the relief patterns in the mask by capillary action. After this filling step, the resist is cross-linked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. There are many criteria that determine whether a particular technology is ready for wafer manufacturing. Included on the list are overlay, throughput, and defectivity. The most demanding devices now require an overlay of better than 4 nm, 3σ. Throughput for an imprint tool is generally targeted at 80 wafers/h. Defectivity and mask life play a significant role relative to meeting the cost of ownership (CoO) requirements in the production of semiconductor devices. The purpose of this paper is to report the status of throughput and defectivity work and to describe the progress made in addressing overlay for advanced devices. To address high-order corrections, a high-order distortion correction (HODC) system is introduced. The combination of applying magnification actuation to the mask and temperature correction to the wafer is described in detail. Examples are presented for the correction of K7, K11, and K17 distortions as well as distortions on actual device wafers.

Modeling OPC complexity for design for manufacturability

NASA Astrophysics Data System (ADS)

Gupta, Puneet; Kahng, Andrew B.; Muddu, Swamy; Nakagawa, Sam; Park, Chul-Hong

2005-11-01

Increasing design complexity in sub-90nm designs results in increased mask complexity and cost. Resolution enhancement techniques (RET) such as assist feature addition, phase shifting (attenuated PSM) and aggressive optical proximity correction (OPC) help in preserving feature fidelity in silicon but increase mask complexity and cost. Data volume increase with rise in mask complexity is becoming prohibitive for manufacturing. Mask cost is determined by mask write time and mask inspection time, which are directly related to the complexity of features printed on the mask. Aggressive RET increase complexity by adding assist features and by modifying existing features. Passing design intent to OPC has been identified as a solution for reducing mask complexity and cost in several recent works. The goal of design-aware OPC is to relax OPC tolerances of layout features to minimize mask cost, without sacrificing parametric yield. To convey optimal OPC tolerances for manufacturing, design optimization should drive OPC tolerance optimization using models of mask cost for devices and wires. Design optimization should be aware of impact of OPC correction levels on mask cost and performance of the design. This work introduces mask cost characterization (MCC) that quantifies OPC complexity, measured in terms of fracture count of the mask, for different OPC tolerances. MCC with different OPC tolerances is a critical step in linking design and manufacturing. In this paper, we present a MCC methodology that provides models of fracture count of standard cells and wire patterns for use in design optimization. MCC cannot be performed by designers as they do not have access to foundry OPC recipes and RET tools. To build a fracture count model, we perform OPC and fracturing on a limited set of standard cells and wire configurations with all tolerance combinations. Separately, we identify the characteristics of the layout that impact fracture count. Based on the fracture count (FC) data from OPC and mask data preparation runs, we build models of FC as function of OPC tolerances and layout parameters.

Improving vision by pupil masking

PubMed Central

Bonaque-González, Sergio; Ríos-Rodríguez, Susana; López-Gil, Norberto

2016-01-01

We propose an alternative solution to improve visual quality by spatially modulating the amplitude of light passing into the eye (related to the eye's transmittance), in contrast to traditional correction of the wavefront phase (related to the local refractive power). Numerical simulations show that masking the aberrated areas at the pupil plane should enhance visual function, especially in highly aberrated eyes. This correction could be implemented in practice using customized contact or intraocular lenses. PMID:27446688

Cognitive processing load across a wide range of listening conditions: insights from pupillometry.

PubMed

Zekveld, Adriana A; Kramer, Sophia E

2014-03-01

The pupil response to speech masked by interfering speech was assessed across an intelligibility range from 0% to 99% correct. In total, 37 participants aged between 18 and 36 years and with normal hearing were included. Pupil dilation was largest at intermediate intelligibility levels, smaller at high intelligibility, and slightly smaller at very difficult levels. Participants who reported that they often gave up listening at low intelligibility levels had smaller pupil dilations in these conditions. Participants who were good at reading masked text had relatively large pupil dilation when intelligibility was low. We conclude that the pupil response is sensitive to processing load, and possibly reflects cognitive overload in difficult conditions. It seems affected by methodological aspects and individual abilities, but does not reflect subjective ratings. Copyright © 2014 Society for Psychophysiological Research.

Simulation based mask defect repair verification and disposition

NASA Astrophysics Data System (ADS)

Guo, Eric; Zhao, Shirley; Zhang, Skin; Qian, Sandy; Cheng, Guojie; Vikram, Abhishek; Li, Ling; Chen, Ye; Hsiang, Chingyun; Zhang, Gary; Su, Bo

2009-10-01

As the industry moves towards sub-65nm technology nodes, the mask inspection, with increased sensitivity and shrinking critical defect size, catches more and more nuisance and false defects. Increased defect counts pose great challenges in the post inspection defect classification and disposition: which defect is real defect, and among the real defects, which defect should be repaired and how to verify the post-repair defects. In this paper, we address the challenges in mask defect verification and disposition, in particular, in post repair defect verification by an efficient methodology, using SEM mask defect images, and optical inspection mask defects images (only for verification of phase and transmission related defects). We will demonstrate the flow using programmed mask defects in sub-65nm technology node design. In total 20 types of defects were designed including defects found in typical real circuit environments with 30 different sizes designed for each type. The SEM image was taken for each programmed defect after the test mask was made. Selected defects were repaired and SEM images from the test mask were taken again. Wafers were printed with the test mask before and after repair as defect printability references. A software tool SMDD-Simulation based Mask Defect Disposition-has been used in this study. The software is used to extract edges from the mask SEM images and convert them into polygons to save in GDSII format. Then, the converted polygons from the SEM images were filled with the correct tone to form mask patterns and were merged back into the original GDSII design file. This merge is for the purpose of contour simulation-since normally the SEM images cover only small area (~1 μm) and accurate simulation requires including larger area of optical proximity effect. With lithography process model, the resist contour of area of interest (AOI-the area surrounding a mask defect) can be simulated. If such complicated model is not available, a simple optical model can be used to get simulated aerial image intensity in the AOI. With built-in contour analysis functions, the SMDD software can easily compare the contour (or intensity) differences between defect pattern and normal pattern. With user provided judging criteria, this software can be easily disposition the defect based on contour comparison. In addition, process sensitivity properties, like MEEF and NILS, can be readily obtained in the AOI with a lithography model, which will make mask defect disposition criteria more intelligent.

Quantitation of specific binding ratio in 123I-FP-CIT SPECT: accurate processing strategy for cerebral ventricular enlargement with use of 3D-striatal digital brain phantom.

PubMed

Furuta, Akihiro; Onishi, Hideo; Amijima, Hizuru

2018-06-01

This study aimed to evaluate the effect of ventricular enlargement on the specific binding ratio (SBR) and to validate the cerebrospinal fluid (CSF)-Mask algorithm for quantitative SBR assessment of 123 I-FP-CIT single-photon emission computed tomography (SPECT) images with the use of a 3D-striatum digital brain (SDB) phantom. Ventricular enlargement was simulated by three-dimensional extensions in a 3D-SDB phantom comprising segments representing the striatum, ventricle, brain parenchyma, and skull bone. The Evans Index (EI) was measured in 3D-SDB phantom images of an enlarged ventricle. Projection data sets were generated from the 3D-SDB phantoms with blurring, scatter, and attenuation. Images were reconstructed using the ordered subset expectation maximization (OSEM) algorithm and corrected for attenuation, scatter, and resolution recovery. We bundled DaTView (Southampton method) with the CSF-Mask processing software for SBR. We assessed SBR with the use of various coefficients (f factor) of the CSF-Mask. Specific binding ratios of 1, 2, 3, 4, and 5 corresponded to SDB phantom simulations with true values. Measured SBRs > 50% that were underestimated with EI increased compared with the true SBR and this trend was outstanding at low SBR. The CSF-Mask improved 20% underestimates and brought the measured SBR closer to the true values at an f factor of 1.0 despite an increase in EI. We connected the linear regression function (y = - 3.53x + 1.95; r = 0.95) with the EI and f factor using root-mean-square error. Processing with CSF-Mask generates accurate quantitative SBR from dopamine transporter SPECT images of patients with ventricular enlargement.

A method for evaluating the relation between sound source segregation and masking

PubMed Central

Lutfi, Robert A.; Liu, Ching-Ju

2011-01-01

Sound source segregation refers to the ability to hear as separate entities two or more sound sources comprising a mixture. Masking refers to the ability of one sound to make another sound difficult to hear. Often in studies, masking is assumed to result from a failure of segregation, but this assumption may not always be correct. Here a method is offered to identify the relation between masking and sound source segregation in studies and an example is given of its application. PMID:21302979

Holmium:YAG thermokeratoplasty: treatment parameters for the correction of astigmatism based upon enucleated human eyes using an application mask

NASA Astrophysics Data System (ADS)

Kriegerowski, Martin; Rassmann, Katja; Oltrup, Theo; Bende, Thomas; Jean, Benedikt J.

1995-05-01

The refractive outcome of thermokeratoplasty depends upon the location and angle of the coagulation spots, applied with a focusing handpiece onto the corneal surface. Accuracy can be enhanced using a specially designed application mask. An astigmatism correction was performed on 10 human donor eyes (Holmium 25, Technomed, FRG, 15 Hz, 20 mJ/pulse, 25 pulses) with an optical zone of 8.1 mm, 5 eyes received a free hand laser application (marked positions) and the other 5 eyes were treated using a suctioned metal mask with drills for the handpiece (optical zone 8.1 mm). To compare the results a silicone replica was taken and analyzed by a confocal laser microtopometer. The refractive change for the steepest meridian was 10 D with a standard deviation of +/- 3.7 D for the free hand application. Using the application mask the refractive outcome was 9.8 D with a standard deviation of only 0.8 D. Using the application mask the standard deviation for the induced refractive change decreases by a factor of five.

1D design style implications for mask making and CEBL

NASA Astrophysics Data System (ADS)

Smayling, Michael C.

2013-09-01

At advanced nodes, CMOS logic is being designed in a highly regular design style because of the resolution limitations of optical lithography equipment. Logic and memory layouts using 1D Gridded Design Rules (GDR) have been demonstrated to nodes beyond 12nm.[1-4] Smaller nodes will require the same regular layout style but with multiple patterning for critical layers. One of the significant advantages of 1D GDR is the ease of splitting layouts into lines and cuts. A lines and cuts approach has been used to achieve good pattern fidelity and process margin to below 12nm.[4] Line scaling with excellent line-edge roughness (LER) has been demonstrated with self-aligned spacer processing.[5] This change in design style has important implications for mask making: • The complexity of the masks will be greatly reduced from what would be required for 2D designs with very complex OPC or inverse lithography corrections. • The number of masks will initially increase, as for conventional multiple patterning. But in the case of 1D design, there are future options for mask count reduction. • The line masks will remain simple, with little or no OPC, at pitches (1x) above 80nm. This provides an excellent opportunity for continual improvement of line CD and LER. The line pattern will be processed through a self-aligned pitch division sequence to divide pitch by 2 or by 4. • The cut masks can be done with "simple OPC" as demonstrated to beyond 12nm.[6] Multiple simple cut masks may be required at advanced nodes. "Coloring" has been demonstrated to below 12nm for two colors and to 8nm for three colors. • Cut/hole masks will eventually be replaced by e-beam direct write using complementary e-beam lithography (CEBL).[7-11] This transition is gated by the availability of multiple column e-beam systems with throughput adequate for high- volume manufacturing. A brief description of 1D and 2D design styles will be presented, followed by examples of 1D layouts. Mask complexity for 1D layouts patterned directly will be compared to mask complexity for lines and cuts at nodes larger than 20nm. No such comparison is possible below 20nm since single-patterning does not work below ~80nm pitch using optical exposure tools. Also discussed will be recently published wafer results for line patterns with pitch division by-2 and by-4 at sub-12nm nodes, plus examples of post-etch results for 1D patterns done with cut masks and compared to cuts exposed by a single-column e-beam direct write system.

Improved mask-based CD uniformity for gridded-design-rule lithography

NASA Astrophysics Data System (ADS)

Faivishevsky, Lev; Khristo, Sergey; Sagiv, Amir; Mangan, Shmoolik

2009-03-01

The difficulties encountered during lithography of state-of-the-art 2D patterns are formidable, and originate from the fact that deep sub-wavelength features are being printed. This results in a practical limit of k1 >=0.4 as well as a multitude of complex restrictive design rules, in order to mitigate or minimize lithographic hot spots. An alternative approach, that is gradually attracting the lithographic community's attention, restricts the design of critical layers to straight, dense lines (a 1D grid), that can be relatively easily printed using current lithographic technology. This is then followed by subsequent, less critical trimming stages to obtain circuit functionality. Thus, the 1D gridded approach allows hotspot-free, proximity-effect free lithography of ultra low- k1 features. These advantages must be supported by a stable CD control mechanism. One of the overriding parameters impacting CDU performance is photo mask quality. Previous publications have demonstrated that IntenCDTM - a novel, mask-based CDU mapping technology running on Applied Materials' Aera2TM aerial imaging mask inspection tool - is ideally fit for detecting mask-based CDU issues in 1D (L&S) patterned masks for memory production. Owing to the aerial nature of image formation, IntenCD directly probes the CD as it is printed on the wafer. In this paper we suggest that IntenCD is naturally fit for detecting mask-based CDU issues in 1D GDR masks. We then study a novel method of recovering and quantifying the physical source of printed CDU, using a novel implementation of the IntenCD technology. We demonstrate that additional, simple measurements, which can be readily performed on board the Aera2TM platform with minimal throughput penalty, may complement IntenCD and allow a robust estimation of the specific nature and strength of mask error source, such as pattern width variation or phase variation, which leads to CDU issues on the printed wafer. We finally discuss the roles played by IntenCD in advanced GDR mask production, starting with tight control over mask production process, continuing to mask qualification at mask shop and ending at in-line wafer CDU correction in fabs.

Active membrane masks for improved overlay performance in proximity lithography

NASA Astrophysics Data System (ADS)

Huston, Dryver R.; Plumpton, James; Esser, Brian; Sullivan, Gerald A.

2004-07-01

Membrane masks are thin (2 micron x 35 mm x 35 mm) structures that carry the master exposure patterns in proximity (X-ray) lithography. With the continuous drive to the printing of ever-finer features in microelectronics, the reduction of mask-wafer overlay positioning errors by passive rigid body positioning and passive stress control in the mask becomes impractical due to nano and sub-micron scale elastic deformations in the membrane mask. This paper describes the design, mechanics and performance of a system for actively stretching a membrane mask in-plane to control overlay distortion. The method uses thermoelectric heating/cooling elements placed on the mask perimeter. The thermoelectric elements cause controlled thermoelastic deformations in the supporting wafer, which in turn corrects distortions in the membrane mask. Silicon carbide masks are the focus of this study, but the method is believed to be applicable to other mask materials, such as diamond. Experimental and numerical results will be presented, as well as a discussion of the design issues and related design decisions.

Subliminal understanding of negation: unconscious control by subliminal processing of word pairs.

PubMed

Armstrong, Anna-Marie; Dienes, Zoltan

2013-09-01

A series of five experiments investigated the extent of subliminal processing of negation. Participants were presented with a subliminal instruction to either pick or not pick an accompanying noun, followed by a choice of two nouns. By employing subjective measures to determine individual thresholds of subliminal priming, the results of these studies indicated that participants were able to identify the correct noun of the pair--even when the correct noun was specified by negation. Furthermore, using a grey-scale contrast method of masking, Experiment 5 confirmed that these priming effects were evidenced in the absence of partial awareness, and without the effect being attributed to the retrieval of stimulus-response links established during conscious rehearsal. Copyright © 2013 Elsevier Inc. All rights reserved.

Optimization of optical proximity correction to reduce mask write time using genetic algorithm

NASA Astrophysics Data System (ADS)

Dick, Gregory J.; Cao, Liang; Asthana, Abhishek; Cheng, Jing; Power, David N.

2018-03-01

The ever increasing pattern densities and design complexities make the tuning of optical proximity correction (OPC) recipes very challenging. One known method for tuning is genetic algorithm (GA). Previously GA has been demonstrated to fine tune OPC recipes in order to achieve better results for possible 1D and 2D geometric concerns like bridging and pinching. This method, however, did not take into account the impact of excess segmentation on downstream operations like fracturing and mask writing. This paper introduces a general methodology to significantly reduce the number of excess edges in the OPC output, thus reducing the number of flashes generated at fracture and subsequently the write time at mask build. GA is used to reduce the degree of unwarranted segmentation while ensuring good OPC quality. An Objective Function (OF) is utilized to ensure quality convergence and process-variation (PV) plus an additional weighed factor to reduce clustered edge count. The technique is applied to 14nm metal layer OPC recipes in order to identify excess segmentation and to produce a modified recipe that significantly reduces these segments. OPC output file sizes is shown to be reduced by 15% or more and overall edge count is shown to be reduced by 10% or more. At the same time overall quality of the OPC recipe is shown to be maintained via OPC Verification (OPCV) results.

SeaWiFS technical report series. Volume 28: SeaWiFS algorithms, part 1

NASA Technical Reports Server (NTRS)

Hooker, Stanford B. (Editor); Firestone, Elaine R. (Editor); Acker, James G. (Editor); Mcclain, Charles R.; Arrigo, Kevin; Esaias, Wayne E.; Darzi, Michael; Patt, Frederick S.; Evans, Robert H.; Brown, James W.

1995-01-01

This document provides five brief reports that address several algorithm investigations sponsored by the Calibration and Validation Team (CVT) within the Sea-viewing Wide Field-of-view Sensor (SeaWiFS) Project. This volume, therefore, has been designated as the first in a series of algorithm volumes. Chapter 1 describes the initial suite of masks, used to prevent further processing of contaminated radiometric data, and flags, which are employed to mark data whose quality (due to a variety of factors) may be suspect. In addition to providing the mask and flag algorithms, this chapter also describes the initial strategy for their implementation. Chapter 2 evaluates various strategies for the detection of clouds and ice in high latitude (polar and sub-polar regions) using Coastal Zone Color Scanner (CZCS) data. Chapter 3 presents an algorithm designed for detecting and masking coccolithosphore blooms in the open ocean. Chapter 4 outlines a proposed scheme for correcting the out-of-band response when SeaWiFS is in orbit. Chapter 5 gives a detailed description of the algorithm designed to apply sensor calibration data during the processing of level-1b data.

Invited Article: Mask-modulated lensless imaging with multi-angle illuminations

NASA Astrophysics Data System (ADS)

Zhang, Zibang; Zhou, You; Jiang, Shaowei; Guo, Kaikai; Hoshino, Kazunori; Zhong, Jingang; Suo, Jinli; Dai, Qionghai; Zheng, Guoan

2018-06-01

The use of multiple diverse measurements can make lensless phase retrieval more robust. Conventional diversity functions include aperture diversity, wavelength diversity, translational diversity, and defocus diversity. Here we discuss a lensless imaging scheme that employs multiple spherical-wave illuminations from a light-emitting diode array as diversity functions. In this scheme, we place a binary mask between the sample and the detector for imposing support constraints for the phase retrieval process. This support constraint enforces the light field to be zero at certain locations and is similar to the aperture constraint in Fourier ptychographic microscopy. We use a self-calibration algorithm to correct the misalignment of the binary mask. The efficacy of the proposed scheme is first demonstrated by simulations where we evaluate the reconstruction quality using mean square error and structural similarity index. The scheme is then experimentally tested by recovering images of a resolution target and biological samples. The proposed scheme may provide new insights for developing compact and large field-of-view lensless imaging platforms. The use of the binary mask can also be combined with other diversity functions for better constraining the phase retrieval solution space. We provide the open-source implementation code for the broad research community.

What's in a mask? Information masking with forward and backward visual masks.

PubMed

Davis, Chris; Kim, Jeesun

2011-10-01

Three experiments tested how the physical format and information content of forward and backward masks affected the extent of visual pattern masking. This involved using different types of forward and backward masks with target discrimination measured by percentage correct in the first experiment (with a fixed target duration) and by an adaptive threshold procedure in the last two. The rationale behind the manipulation of the content of the masks stemmed from masking theories emphasizing attentional and/or conceptual factors rather than visual ones. Experiment 1 used word masks and showed that masking was reduced (a masking reduction effect) when the forward and backward masks were the same word (although in different case) compared to when the masks were different words. Experiment 2 tested the extent to which a reduction in masking might occur due to the physical similarity between the forward and backward masks by comparing the effect of the same content of the masks in the same versus different case. The result showed a significant reduction in masking for same content masks but no significant effect of case. The last experiment examined whether the reduction in masking effect would be observed with nonword masks--that is, having no high-level representation. No reduction in masking was found from same compared to different nonword masks (Experiment 3). These results support the view that the conscious perception of a rapidly displayed target stimulus is in part determined by high-level perceptual/cognitive factors concerned with masking stimulus grouping and attention.

Electron-beam lithography data preparation based on multithreading MGS/PROXECCO

NASA Astrophysics Data System (ADS)

Eichhorn, Hans; Lemke, Melchior; Gramss, Juergen; Buerger, B.; Baetz, Uwe; Belic, Nikola; Eisenmann, Hans

2001-04-01

This paper will highlight an enhanced MGS layout data post processor and the results of its industrial application. Besides the preparation of hierarchical GDS layout data, the processing of flat data has been drastically accelerated. The application of the Proximity Correction in conjunction with the OEM version of the PROXECCO was crowned with success for data preparation of mask sets featuring 0.25 micrometers /0.18 micrometers integration levels.

Study of shape evaluation for mask and silicon using large field of view

NASA Astrophysics Data System (ADS)

Matsuoka, Ryoichi; Mito, Hiroaki; Shinoda, Shinichi; Toyoda, Yasutaka

2010-09-01

We have developed a highly integrated method of mask and silicon metrology. The aim of this integration is evaluating the performance of the silicon corresponding to Hotspot on a mask. It can use the mask shape of a large field, besides. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used in mask CD-SEM and silicon CD-SEM. Currently, as semiconductor manufacture moves towards even smaller feature size, this necessitates more aggressive optical proximity correction (OPC) to drive the super-resolution technology (RET). In other words, there is a trade-off between highly precise RET and mask manufacture, and this has a big impact on the semiconductor market that centers on the mask business. As an optimal solution to these issues, we provide a DFM solution that extracts 2-dimensional data for a more realistic and error-free simulation by reproducing accurately the contour of the actual mask, in addition to the simulation results from the mask data. On the other hand, there is roughness in the silicon form made from a mass-production line. Moreover, there is variation in the silicon form. For this reason, quantification of silicon form is important, in order to estimate the performance of a pattern. In order to quantify, the same form is equalized in two dimensions. And the method of evaluating based on the form is popular. In this study, we conducted experiments for averaging method of the pattern (Measurement Based Contouring) as two-dimensional mask and silicon evaluation technique. That is, observation of the identical position of a mask and a silicon was considered. The result proved its detection accuracy and reliability of variability on two-dimensional pattern (mask and silicon) and is adaptable to following fields of mask quality management. •Discrimination of nuisance defects for fine pattern. •Determination of two-dimensional variability of pattern. •Verification of the performance of the pattern of various kinds of Hotspots. In this report, we introduce the experimental results and the application. We expect that the mask measurement and the shape control on mask production will make a huge contribution to mask yield-enhancement and that the DFM solution for mask quality control process will become much more important technology than ever. It is very important to observe the form of the same location of Design, Mask, and Silicon in such a viewpoint. And we report it about algorithm of the image composition in Large Field.

Strategy for robot motion and path planning in robot taping

NASA Astrophysics Data System (ADS)

Yuan, Qilong; Chen, I.-Ming; Lembono, Teguh Santoso; Landén, Simon Nelson; Malmgren, Victor

2016-06-01

Covering objects with masking tapes is a common process for surface protection in processes like spray painting, plasma spraying, shot peening, etc. Manual taping is tedious and takes a lot of effort of the workers. The taping process is a special process which requires correct surface covering strategy and proper attachment of the masking tape for an efficient surface protection. We have introduced an automatic robot taping system consisting of a robot manipulator, a rotating platform, a 3D scanner and specially designed taping end-effectors. This paper mainly talks about the surface covering strategies for different classes of geometries. The methods and corresponding taping tools are introduced for taping of following classes of surfaces: Cylindrical/extended surfaces, freeform surfaces with no grooves, surfaces with grooves, and rotational symmetrical surfaces. A collision avoidance algorithm is introduced for the robot taping manipulation. With further improvements on segmenting surfaces of taping parts and tape cutting mechanisms, such taping solution with the taping tool and the taping methodology can be combined as a very useful and practical taping package to assist humans in this tedious and time costly work.

Cluster tool solution for fabrication and qualification of advanced photomasks

NASA Astrophysics Data System (ADS)

Schaetz, Thomas; Hartmann, Hans; Peter, Kai; Lalanne, Frederic P.; Maurin, Olivier; Baracchi, Emanuele; Miramond, Corinne; Brueck, Hans-Juergen; Scheuring, Gerd; Engel, Thomas; Eran, Yair; Sommer, Karl

2000-07-01

The reduction of wavelength in optical lithography, phase shift technology and optical proximity correction (OPC), requires a rapid increase in cost effective qualification of photomasks. The knowledge about CD variation, loss of pattern fidelity especially for OPC pattern and mask defects concerning the impact on wafer level is becoming a key issue for mask quality assessment. As part of the European Community supported ESPRIT projection 'Q-CAP', a new cluster concept has been developed, which allows the combination of hardware tools as well as software tools via network communication. It is designed to be open for any tool manufacturer and mask hose. The bi-directional network access allows the exchange of all relevant mask data including grayscale images, measurement results, lithography parameters, defect coordinates, layout data, process data etc. and its storage to a SQL database. The system uses SEMI format descriptions as well as standard network hardware and software components for the client server communication. Each tool is used mainly to perform its specific application without using expensive time to perform optional analysis, but the availability of the database allows each component to share the full data ste gathered by all components. Therefore, the cluster can be considered as one single virtual tool. The paper shows the advantage of the cluster approach, the benefits of the tools linked together already, and a vision of a mask house in the near future.

Lithographic performance comparison with various RET for 45-nm node with hyper NA

NASA Astrophysics Data System (ADS)

Adachi, Takashi; Inazuki, Yuichi; Sutou, Takanori; Kitahata, Yasuhisa; Morikawa, Yasutaka; Toyama, Nobuhito; Mohri, Hiroshi; Hayashi, Naoya

2006-05-01

In order to realize 45 nm node lithography, strong resolution enhancement technology (RET) and water immersion will be needed. In this research, we discussed about various RET performance comparison for 45 nm node using 3D rigorous simulation. As a candidate, we chose binary mask (BIN), several kinds of attenuated phase-shifting mask (att-PSM) and chrome-less phase-shifting lithography mask (CPL). The printing performance was evaluated and compared for each RET options, after the optimizing illumination conditions, mask structure and optical proximity correction (OPC). The evaluation items of printing performance were CD-DOF, contrast-DOF, conventional ED-window and MEEF, etc. It's expected that effect of mask 3D topography becomes important at 45 nm node, so we argued about not only the case of ideal structures, but also the mask topography error effects. Several kinds of mask topography error were evaluated and we confirmed how these errors affect to printing performance.

Effectiveness of three just-in-time training modalities for N-95 mask fit testing.

PubMed

Jones, David; Stoler, Genevieve; Suyama, Joe

2013-01-01

To compare and contrast three different training modalities for fit testing N-95 respirator face masks. Block randomized interventional study. Urban university. Two hundred eighty-nine medical students. Students were randomly assigned to video, lecture, or slide show to evaluate the effectiveness of the methods for fit testing large groups of people. Ease of fit and success of fit for each instructional technique. Mask 1 was a Kimberly-Clark duckbill N-95 respirator mask, and mask 2 was a 3M™ carpenters N-95 respirator mask. "Ease of fit" was defined as the ability to successfully don a mask in less than 30 seconds. "Success of fit" was defined as the ability to correctly don a mask in one try. There were no statistical differences by training modality for either mask regarding ease of fit or success of fit. There were no differences among video presentation, small group demonstration, and self-directed slide show just-in-time training modalities for ease of fit or success of fit N-95 respirator mask fitting. Further study is needed to explore more effective fit training modalities.

Evaluation of the Joint Service General Purpose Mask, XM50

DTIC Science & Technology

2005-07-01

and vision Trial 7 Trial 8 Trial 12 correction E-2 TRIAL 3299 7795 2079 Did not finish exercises. No No comment on sweat or No comment on sweat or...lhr 50 min playing time). Duringboth activities, slight Reported slight intermittent No comment on. swet or fogging with slight impact on fogging...right eye. During steam No comment on Mask was stationary. engine exercise, reported 4 sweat or fogging Reported that seal mask seal leakage at

Efficient three-dimensional resist profile-driven source mask optimization optical proximity correction based on Abbe-principal component analysis and Sylvester equation

NASA Astrophysics Data System (ADS)

Lin, Pei-Chun; Yu, Chun-Chang; Chen, Charlie Chung-Ping

2015-01-01

As one of the critical stages of a very large scale integration fabrication process, postexposure bake (PEB) plays a crucial role in determining the final three-dimensional (3-D) profiles and lessening the standing wave effects. However, the full 3-D chemically amplified resist simulation is not widely adopted during the postlayout optimization due to the long run-time and huge memory usage. An efficient simulation method is proposed to simulate the PEB while considering standing wave effects and resolution enhancement techniques, such as source mask optimization and subresolution assist features based on the Sylvester equation and Abbe-principal component analysis method. Simulation results show that our algorithm is 20× faster than the conventional Gaussian convolution method.

SpcAudace: Spectroscopic processing and analysis package of Audela software

NASA Astrophysics Data System (ADS)

Mauclaire, Benjamin

2017-11-01

SpcAudace processes long slit spectra with automated pipelines and performs astrophysical analysis of the latter data. These powerful pipelines do all the required steps in one pass: standard preprocessing, masking of bad pixels, geometric corrections, registration, optimized spectrum extraction, wavelength calibration and instrumental response computation and correction. Both high and low resolution long slit spectra are managed for stellar and non-stellar targets. Many types of publication-quality figures can be easily produced: pdf and png plots or annotated time series plots. Astrophysical quantities can be derived from individual or large amount of spectra with advanced functions: from line profile characteristics to equivalent width and periodogram. More than 300 documented functions are available and can be used into TCL scripts for automation. SpcAudace is based on Audela open source software.

How to obtain accurate resist simulations in very low-k1 era?

NASA Astrophysics Data System (ADS)

Chiou, Tsann-Bim; Park, Chan-Ha; Choi, Jae-Seung; Min, Young-Hong; Hansen, Steve; Tseng, Shih-En; Chen, Alek C.; Yim, Donggyu

2006-03-01

A procedure for calibrating a resist model iteratively adjusts appropriate parameters until the simulations of the model match the experimental data. The tunable parameters may include the shape of the illuminator, the geometry and transmittance/phase of the mask, light source and scanner-related parameters that affect imaging quality, resist process control and most importantly the physical/chemical factors in the resist model. The resist model can be accurately calibrated by measuring critical dimensions (CD) of a focus-exposure matrix (FEM) and the technique has been demonstrated to be very successful in predicting lithographic performance. However, resist model calibration is more challenging in the low k1 (<0.3) regime because numerous uncertainties, such as mask and resist CD metrology errors, are becoming too large to be ignored. This study demonstrates a resist model calibration procedure for a 0.29 k1 process using a 6% halftone mask containing 2D brickwall patterns. The influence of different scanning electron microscopes (SEM) and their wafer metrology signal analysis algorithms on the accuracy of the resist model is evaluated. As an example of the metrology issue of the resist pattern, the treatment of a sidewall angle is demonstrated for the resist line ends where the contrast is relatively low. Additionally, the mask optical proximity correction (OPC) and corner rounding are considered in the calibration procedure that is based on captured SEM images. Accordingly, the average root-mean-square (RMS) error, which is the difference between simulated and experimental CDs, can be improved by considering the metrological issues. Moreover, a weighting method and a measured CD tolerance are proposed to handle the different CD variations of the various edge points of the wafer resist pattern. After the weighting method is implemented and the CD selection criteria applied, the RMS error can be further suppressed. Therefore, the resist CD and process window can be confidently evaluated using the accurately calibrated resist model. One of the examples simulates the sensitivity of the mask pattern error, which is helpful to specify the mask CD control.

Fast synthesis of topographic mask effects based on rigorous solutions

NASA Astrophysics Data System (ADS)

Yan, Qiliang; Deng, Zhijie; Shiely, James

2007-10-01

Topographic mask effects can no longer be ignored at technology nodes of 45 nm, 32 nm and beyond. As feature sizes become comparable to the mask topographic dimensions and the exposure wavelength, the popular thin mask model breaks down, because the mask transmission no longer follows the layout. A reliable mask transmission function has to be derived from Maxwell equations. Unfortunately, rigorous solutions of Maxwell equations are only manageable for limited field sizes, but impractical for full-chip optical proximity corrections (OPC) due to the prohibitive runtime. Approximation algorithms are in demand to achieve a balance between acceptable computation time and tolerable errors. In this paper, a fast algorithm is proposed and demonstrated to model topographic mask effects for OPC applications. The ProGen Topographic Mask (POTOMAC) model synthesizes the mask transmission functions out of small-sized Maxwell solutions from a finite-difference-in-time-domain (FDTD) engine, an industry leading rigorous simulator of topographic mask effect from SOLID-E. The integral framework presents a seamless solution to the end user. Preliminary results indicate the overhead introduced by POTOMAC is contained within the same order of magnitude in comparison to the thin mask approach.

Mask-induced aberration in EUV lithography

NASA Astrophysics Data System (ADS)

Nakajima, Yumi; Sato, Takashi; Inanami, Ryoichi; Nakasugi, Tetsuro; Higashiki, Tatsuhiko

2009-04-01

We estimated aberrations using Zernike sensitivity analysis. We found the difference of the tolerated aberration with line direction for illumination. The tolerated aberration of perpendicular line for illumination is much smaller than that of parallel line. We consider this difference to be attributable to the mask 3D effect. We call it mask-induced aberration. In the case of the perpendicular line for illumination, there was a difference in CD between right line and left line without aberration. In this report, we discuss the possibility of pattern formation in NA 0.25 generation EUV lithography tool. In perpendicular pattern for EUV light, the dominant part of aberration is mask-induced aberration. In EUV lithography, pattern correction based on the mask topography effect will be more important.

Algorithm Updates for the Fourth SeaWiFS Data Reprocessing

NASA Technical Reports Server (NTRS)

Hooker, Stanford, B. (Editor); Firestone, Elaine R. (Editor); Patt, Frederick S.; Barnes, Robert A.; Eplee, Robert E., Jr.; Franz, Bryan A.; Robinson, Wayne D.; Feldman, Gene Carl; Bailey, Sean W.

2003-01-01

The efforts to improve the data quality for the Sea-viewing Wide Field-of-view Sensor (SeaWiFS) data products have continued, following the third reprocessing of the global data set in May 2000. Analyses have been ongoing to address all aspects of the processing algorithms, particularly the calibration methodologies, atmospheric correction, and data flagging and masking. All proposed changes were subjected to rigorous testing, evaluation and validation. The results of these activities culminated in the fourth reprocessing, which was completed in July 2002. The algorithm changes, which were implemented for this reprocessing, are described in the chapters of this volume. Chapter 1 presents an overview of the activities leading up to the fourth reprocessing, and summarizes the effects of the changes. Chapter 2 describes the modifications to the on-orbit calibration, specifically the focal plane temperature correction and the temporal dependence. Chapter 3 describes the changes to the vicarious calibration, including the stray light correction to the Marine Optical Buoy (MOBY) data and improved data screening procedures. Chapter 4 describes improvements to the near-infrared (NIR) band correction algorithm. Chapter 5 describes changes to the atmospheric correction and the oceanic property retrieval algorithms, including out-of-band corrections, NIR noise reduction, and handling of unusual conditions. Chapter 6 describes various changes to the flags and masks, to increase the number of valid retrievals, improve the detection of the flag conditions, and add new flags. Chapter 7 describes modifications to the level-la and level-3 algorithms, to improve the navigation accuracy, correct certain types of spacecraft time anomalies, and correct a binning logic error. Chapter 8 describes the algorithm used to generate the SeaWiFS photosynthetically available radiation (PAR) product. Chapter 9 describes a coupled ocean-atmosphere model, which is used in one of the changes described in Chapter 4. Finally, Chapter 10 describes a comparison of results from the third and fourth reprocessings along the US. Northeast coast.

Image masking using polygon fills and morphological transformations

NASA Technical Reports Server (NTRS)

Simpson, James J.

1992-01-01

Polygon-fill operations and morphological transformations are effective computational tools for the land-masking and coastline-correction preprocessing operations often applied to AVHRR data prior to oceanographic applications. These masking operations, in conjunction with cloud-screening techniques, can be used on such other oceanographically significant remote-sensing data as those of the Coastal Zone Color Scanner, GOES, and Landsat. The sensitivity of the methods to regional variations in atmospheric conditions and land-ocean temperature gradients is assessed for tropical, midlatitude, and high latitude regions.

MEDEA+ project 2T302 MUSCLE: masks through user's supply chain: leadership by excellence

NASA Astrophysics Data System (ADS)

Torsy, Andreas

2008-04-01

The rapid evolution of our information society depends on the continuous developments and innovations of semiconductor products. The cost per chip functionality keeps reducing by a factor of 2 every 18 month. However, this performance and success of the semiconductor industry critically depends on the quality of the lithographic photomasks. The need for the high quality of photomask drives lithography costs sensitively, which is a key factor in the manufacture of microelectronics devices. Therefore, the aim is to reduce production costs while overcoming challenges in terms of feature sizes, complexity and cycle times. Consequently, lithography processes must provide highest possible quality at reasonable prices. This way, the leadership in the lithographic area can be maintained and European chipmakers can stay competitive with manufacturers in the Far East and the USA. Under the umbrella of MEDEA+, a project called MUSCLE (<< Masks through User's Supply Chain: Leadership by Excellence >>) has been started among leading semiconductor companies in Europe: ALTIS Semiconductor (Project Leader), ALCATEL Vacuum, ATMEL, CEA/LETI, Entegris, NXP Semiconductors, TOPPAN Photomasks, AMTC, Carl ZEISS SMS, DMS, Infineon Technologies, VISTEC Semiconductor, NIKON Precision, SCHOTT Lithotec, ASML, PHOTRONICS, IMEC, DCE, DNP Photomask, STMicroelectronics, XYALIS and iCADA. MUSCLE focuses particularly on mask data flow, photomask carrier, photomask defect characterization and photomask data handling. In this paper, we will discuss potential solutions like standardization and automation of the photomask data flow based on SEMI P10, the performance and the impact of the supply chain parameter within the photomask process, the standardization of photomask defect characterization and a discussion of the impact of new Reticle Enhancement Technologies (RET) such as mask process correction and finally a generic model to describe the photomasks key performance indicators for prototype photomasks.

Design Architecture of field-effect transistor with back gate electrode for biosensor application

NASA Astrophysics Data System (ADS)

Fathil, M. F. M.; Arshad, M. K. Md.; Hashim, U.; Ruslinda, A. R.; Gopinath, Subash C. B.; M. Nuzaihan M., N.; Ayub, R. M.; Adzhri, R.; Zaki, M.; Azman, A. H.

2016-07-01

This paper presents the preparation method of photolithography chrome mask design used in fabrication process of field-effect transistor with back gate biasing based biosensor. Initially, the chrome masks are designed by studying the process flow of the biosensor fabrication, followed by drawing of the actual chrome mask using the AutoCAD software. The overall width and length of the device is optimized at 16 mm and 16 mm, respectively. Fabrication processes of the biosensor required five chrome masks, which included source and drain formation mask, the back gate area formation mask, electrode formation mask, front gate area formation mask, and passivation area formation mask. The complete chrome masks design will be sent for chrome mask fabrication and for future use in biosensor fabrication.

Layperson mouth-to-mask ventilation using a modified I-gel laryngeal mask after brief onsite instruction: a manikin-based feasibility trial.

PubMed

Schälte, Gereon; Bomhard, Lilli-Theresa; Rossaint, Rolf; Coburn, Mark; Stoppe, Christian; Zoremba, Norbert; Rieg, Annette

2016-05-12

The intention of this manikin-based trial was to evaluate whether laypersons are able to operate an I-gel laryngeal mask (I-gel) modified for mouth-to-mask ventilation after receiving brief on-site instruction. Entrance hall of a university hospital and the city campus of a public technical university, using a protected manikin scenario. Laypersons were handed a labelled, mouthpiece-integrated I-gel laryngeal mask and a corresponding instruction chart and were asked to follow the printed instructions. The overall process was analysed and evaluated according to quality and duration. Data from 100 participants were analysed. Overall, 79% of participants were able to effectively ventilate the manikin, 90% placed the laryngeal mask with the correct turn and direction, 19% did not position the mask deep enough and 85% believed that their inhibition threshold for performing resuscitation was lowered. A significant reduction in reluctance before and after the trial was found (p<0.0001). A total of 35% of participants had concerns about applying first aid in an emergency. Former basic life support (BLS) training significantly reduced the time of insertion (19.6 s, 95% CI 17.8 to 21.5, p=0.0004) and increased overall success (p=0.0096). Laypersons were able to manage mouth-to-mask ventilation in the manikin with a reasonable success rate after receiving brief chart-based on-site instructions using a labelled I-gel mask. Positioning the mask deep enough and identifying whether the manikin was successfully ventilated were the main problems observed. A significant reduction in reluctance towards initialising BLS by using a modified supraglottic airway device (SAD) may lead to better acceptance of bystander resuscitation in laypersons, supporting the introduction of SADs into BLS courses and the stocking of SADs in units with public automatic external defibrillators. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://www.bmj.com/company/products-services/rights-and-licensing/

Refractive microlensarray made of silver-halide sensitized gelatin (SHSG) etched by enzyme with SLM-based lithography

NASA Astrophysics Data System (ADS)

Guo, Xiaowei; Chen, Mingyong; Zhu, Jianhua; Ma, Yanqin; Du, Jinglei; Guo, Yongkang; Du, Chunlei

2006-01-01

A novel method for the fabrication of continuous micro-optical components is presented in this paper. It employs a computer controlled digital-micromirror-device(DMD TM) as a switchable projection mask and silver-halide sensitized gelatin (SHSG) as recording material. By etching SHSG with enzyme solution, the micro-optical components with relief modulation can be generated through special processing procedures. The principles of etching SHSG with enzyme and theoretical analysis for deep etching are also discussed in detail, and the detailed quantitative experiments on the processing procedures are conducted to determine optimum technique parameters. A good linear relationship within a depth range of 4μm was experimentally obtained between exposure dose and relief depth. At last, the microlensarray with 256.8μm radius and 2.572μm depth was achieved. This method is simple, cheap and the aberration in processing procedures can be corrected in the step of designing mask, so it is a practical method to fabricate good continuous profile for low-volume production.

Interferometric surface mapping with variable sensitivity.

PubMed

Jaerisch, W; Makosch, G

1978-03-01

In the photolithographic process, presently employed for the production of integrated circuits, sets of correlated masks are used for exposing the photoresist on silicon wafers. Various sets of masks which are printed in different printing tools must be aligned correctly with respect to the structures produced on the wafer in previous process steps. Even when perfect alignment is considered, displacements and distortions of the printed wafer patterns occur. They are caused by imperfections of the printing tools or/and wafer deformations resulting from high temperature processes. Since the electrical properties of the final integrated circuits and therefore the manufacturing yield depend to a great extent on the precision at which such patterns are superimposed, simple and fast overlay measurements and flatness measurements as well are very important in IC-manufacturing. A simple optical interference method for flatness measurements will be described which can be used under manufacturing conditions. This method permits testing of surface height variations by nearly grazing light incidence by absence of a physical reference plane. It can be applied to polished surfaces and rough surfaces as well.

Ka-Band ARM Zenith Radar Corrections Value-Added Product

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Karen; Toto, Tami; Giangrande, Scott

The KAZRCOR Value -added Product (VAP) performs several corrections to the ingested KAZR moments and also creates a significant detection mask for each radar mode. The VAP computes gaseous attenuation as a function of time and radial distance from the radar antenna, based on ambient meteorological observations, and corrects observed reflectivities for that effect. KAZRCOR also dealiases mean Doppler velocities to correct velocities whose magnitudes exceed the radar’s Nyquist velocity. Input KAZR data fields are passed through into the KAZRCOR output files, in their native time and range coordinates. Complementary corrected reflectivity and velocity fields are provided, along with amore » mask of significant detections and a number of data quality flags. This report covers the KAZRCOR VAP as applied to the original KAZR radars and the upgraded KAZR2 radars. Currently there are two separate code bases for the different radar versions, but once KAZR and KAZR2 data formats are harmonized, only a single code base will be required.« less

Neural Correlates of the Lombard Effect in Primate Auditory Cortex

PubMed Central

Eliades, Steven J.

2012-01-01

Speaking is a sensory-motor process that involves constant self-monitoring to ensure accurate vocal production. Self-monitoring of vocal feedback allows rapid adjustment to correct perceived differences between intended and produced vocalizations. One important behavior in vocal feedback control is a compensatory increase in vocal intensity in response to noise masking during vocal production, commonly referred to as the Lombard effect. This behavior requires mechanisms for continuously monitoring auditory feedback during speaking. However, the underlying neural mechanisms are poorly understood. Here we show that when marmoset monkeys vocalize in the presence of masking noise that disrupts vocal feedback, the compensatory increase in vocal intensity is accompanied by a shift in auditory cortex activity toward neural response patterns seen during vocalizations under normal feedback condition. Furthermore, we show that neural activity in auditory cortex during a vocalization phrase predicts vocal intensity compensation in subsequent phrases. These observations demonstrate that the auditory cortex participates in self-monitoring during the Lombard effect, and may play a role in the compensation of noise masking during feedback-mediated vocal control. PMID:22855821

System for generating two-dimensional masks from a three-dimensional model using topological analysis

DOEpatents

Schiek, Richard [Albuquerque, NM

2006-06-20

A method of generating two-dimensional masks from a three-dimensional model comprises providing a three-dimensional model representing a micro-electro-mechanical structure for manufacture and a description of process mask requirements, reducing the three-dimensional model to a topological description of unique cross sections, and selecting candidate masks from the unique cross sections and the cross section topology. The method further can comprise reconciling the candidate masks based on the process mask requirements description to produce two-dimensional process masks.

Past and future challenges from a display mask writer perspective

NASA Astrophysics Data System (ADS)

Ekberg, Peter; von Sydow, Axel

2012-06-01

Since its breakthrough, the liquid crystal technology has continued to gain momentum and the LCD is today the dominating display type used in desktop monitors, television sets, mobile phones as well as other mobile devices. To improve production efficiency and enable larger screen sizes, the LCD industry has step by step increased the size of the mother glass used in the LCD manufacturing process. Initially the mother glass was only around 0.1 m2 large, but with each generation the size has increased and with generation 10 the area reaches close to 10 m2. The increase in mother glass size has in turn led to an increase in the size of the photomasks used - currently the largest masks are around 1.6 × 1.8 meters. A key mask performance criterion is the absence of "mura" - small systematic errors captured only by the very sensitive human eye. To eliminate such systematic errors, special techniques have been developed by Micronic Mydata. Some mura suppressing techniques are described in this paper. Today, the race towards larger glass sizes has come to a halt and a new race - towards higher resolution and better image quality - is ongoing. The display mask is therefore going through a change that resembles what the semiconductor mask went through some time ago: OPC features are introduced, CD requirements are increasing sharply and multi tone masks (MTMs) are widely used. Supporting this development, Micronic Mydata has introduced a number of compensation methods in the writer, such as Z-correction, CD map and distortion control. In addition, Micronic Mydata MMS15000, the world's most precise large area metrology tool, has played an important role in improving mask placement quality and is briefly described in this paper. Furthermore, proposed specifications and system architecture concept for a new generation mask writers - able to fulfill future image quality requirements - is presented in this paper. This new system would use an AOD/AOM writing engine and be capable of resolving 0.6 micron features.

Influence of auditory fatigue on masked speech intelligibility

NASA Technical Reports Server (NTRS)

Parker, D. E.; Martens, W. L.; Johnston, P. A.

1980-01-01

Intelligibility of PB word lists embedded in simultaneous masking noise was evaluated before and after fatiguing-noise exposure, which was determined by observing the number of words correctly repeated during a shadowing task. Both the speech signal and the masking noise were filtered to a 2825-3185-Hz band. Masking-noise leves were varied from 0- to 90-dB SL. Fatigue was produced by a 1500-3000-Hz octave band of noise at 115 dB (re 20 micron-Pa) presented continuously for 5 min. The results of three experiments indicated that speed intelligibility was reduced when the speech was presented against a background of silence but that the fatiguing-noise exposure had no effect on intelligibility when the speech was made more intense and embedded in masking noise of 40-90-dB SL. These observations are interpreted by considering the recruitment produced by fatigue and masking noise.

Microscopic validation of whole mouse micro-metastatic tumor imaging agents using cryo-imaging and sliding organ image registration.

PubMed

Liu, Yiqiao; Zhou, Bo; Qutaish, Mohammed; Wilson, David L

2016-01-01

We created a metastasis imaging, analysis platform consisting of software and multi-spectral cryo-imaging system suitable for evaluating emerging imaging agents targeting micro-metastatic tumor. We analyzed CREKA-Gd in MRI, followed by cryo-imaging which repeatedly sectioned and tiled microscope images of the tissue block face, providing anatomical bright field and molecular fluorescence, enabling 3D microscopic imaging of the entire mouse with single metastatic cell sensitivity. To register MRI volumes to the cryo bright field reference, we used our standard mutual information, non-rigid registration which proceeded: preprocess → affine → B-spline non-rigid 3D registration. In this report, we created two modified approaches: mask where we registered locally over a smaller rectangular solid, and sliding organ . Briefly, in sliding organ , we segmented the organ, registered the organ and body volumes separately and combined results. Though s liding organ required manual annotation, it provided the best result as a standard to measure other registration methods. Regularization parameters for standard and mask methods were optimized in a grid search. Evaluations consisted of DICE, and visual scoring of a checkerboard display. Standard had accuracy of 2 voxels in all regions except near the kidney, where there were 5 voxels sliding. After mask and sliding organ correction, kidneys sliding were within 2 voxels, and Dice overlap increased 4%-10% in mask compared to standard . Mask generated comparable results with sliding organ and allowed a semi-automatic process.

Temporal windows in visual processing: "prestimulus brain state" and "poststimulus phase reset" segregate visual transients on different temporal scales.

PubMed

Wutz, Andreas; Weisz, Nathan; Braun, Christoph; Melcher, David

2014-01-22

Dynamic vision requires both stability of the current perceptual representation and sensitivity to the accumulation of sensory evidence over time. Here we study the electrophysiological signatures of this intricate balance between temporal segregation and integration in vision. Within a forward masking paradigm with short and long stimulus onset asynchronies (SOA), we manipulated the temporal overlap of the visual persistence of two successive transients. Human observers enumerated the items presented in the second target display as a measure of the informational capacity read-out from this partly temporally integrated visual percept. We observed higher β-power immediately before mask display onset in incorrect trials, in which enumeration failed due to stronger integration of mask and target visual information. This effect was timescale specific, distinguishing between segregation and integration of visual transients that were distant in time (long SOA). Conversely, for short SOA trials, mask onset evoked a stronger visual response when mask and targets were correctly segregated in time. Examination of the target-related response profile revealed the importance of an evoked α-phase reset for the segregation of those rapid visual transients. Investigating this precise mapping of the temporal relationships of visual signals onto electrophysiological responses highlights how the stream of visual information is carved up into discrete temporal windows that mediate between segregated and integrated percepts. Fragmenting the stream of visual information provides a means to stabilize perceptual events within one instant in time.

Microscopic validation of whole mouse micro-metastatic tumor imaging agents using cryo-imaging and sliding organ image registration

NASA Astrophysics Data System (ADS)

Liu, Yiqiao; Zhou, Bo; Qutaish, Mohammed; Wilson, David L.

2016-03-01

We created a metastasis imaging, analysis platform consisting of software and multi-spectral cryo-imaging system suitable for evaluating emerging imaging agents targeting micro-metastatic tumor. We analyzed CREKA-Gd in MRI, followed by cryo-imaging which repeatedly sectioned and tiled microscope images of the tissue block face, providing anatomical bright field and molecular fluorescence, enabling 3D microscopic imaging of the entire mouse with single metastatic cell sensitivity. To register MRI volumes to the cryo bright field reference, we used our standard mutual information, non-rigid registration which proceeded: preprocess --> affine --> B-spline non-rigid 3D registration. In this report, we created two modified approaches: mask where we registered locally over a smaller rectangular solid, and sliding organ. Briefly, in sliding organ, we segmented the organ, registered the organ and body volumes separately and combined results. Though sliding organ required manual annotation, it provided the best result as a standard to measure other registration methods. Regularization parameters for standard and mask methods were optimized in a grid search. Evaluations consisted of DICE, and visual scoring of a checkerboard display. Standard had accuracy of 2 voxels in all regions except near the kidney, where there were 5 voxels sliding. After mask and sliding organ correction, kidneys sliding were within 2 voxels, and Dice overlap increased 4%-10% in mask compared to standard. Mask generated comparable results with sliding organ and allowed a semi-automatic process.

DSCOVR EPIC L2 Atmospheric Correction (MAIAC) Data Release Announcement

Atmospheric Science Data Center

2018-06-22

... several atmospheric quantities including cloud mask and aerosol optical depth (AOD) required for atmospheric correction. The parameters ... is a useful complementary dataset to MODIS and VIIRS global aerosol products.   Information about the DSCOVR EPIC Atmospheric ...

Excimer laser delivery system for astigmatic and hyperopic photorefractive surgery

NASA Astrophysics Data System (ADS)

Beck, Rasmus; Foerster, Werner

1994-06-01

Ablation of corneal tissue with excimer laser light is an effective way to correct refractive errors of the eye. For this purpose a beam-stop (iris diaphragm or interchangeable masks) is illuminated by the laser radiation. The beam-stop is imaged onto the cornea, and circular or elliptic ablations are produced. The computer-controlled process varies the diameter of the ablation area in a way that the inner portions of the treatment zone receive more laser energy than the outer portions, thus flattening the curvature of the refractive surface. For the treatment of hyperopia, the outer portions of the ablation area receive more laser energy to steepen the surface profile of the cornea. The beam delivery system employs several sets of circular, elliptic and ring shaped masks which are etched into a stainless-steel tape.

Atypical audio-visual speech perception and McGurk effects in children with specific language impairment

PubMed Central

Leybaert, Jacqueline; Macchi, Lucie; Huyse, Aurélie; Champoux, François; Bayard, Clémence; Colin, Cécile; Berthommier, Frédéric

2014-01-01

Audiovisual speech perception of children with specific language impairment (SLI) and children with typical language development (TLD) was compared in two experiments using /aCa/ syllables presented in the context of a masking release paradigm. Children had to repeat syllables presented in auditory alone, visual alone (speechreading), audiovisual congruent and incongruent (McGurk) conditions. Stimuli were masked by either stationary (ST) or amplitude modulated (AM) noise. Although children with SLI were less accurate in auditory and audiovisual speech perception, they showed similar auditory masking release effect than children with TLD. Children with SLI also had less correct responses in speechreading than children with TLD, indicating impairment in phonemic processing of visual speech information. In response to McGurk stimuli, children with TLD showed more fusions in AM noise than in ST noise, a consequence of the auditory masking release effect and of the influence of visual information. Children with SLI did not show this effect systematically, suggesting they were less influenced by visual speech. However, when the visual cues were easily identified, the profile of responses to McGurk stimuli was similar in both groups, suggesting that children with SLI do not suffer from an impairment of audiovisual integration. An analysis of percent of information transmitted revealed a deficit in the children with SLI, particularly for the place of articulation feature. Taken together, the data support the hypothesis of an intact peripheral processing of auditory speech information, coupled with a supra modal deficit of phonemic categorization in children with SLI. Clinical implications are discussed. PMID:24904454

Atypical audio-visual speech perception and McGurk effects in children with specific language impairment.

PubMed

Leybaert, Jacqueline; Macchi, Lucie; Huyse, Aurélie; Champoux, François; Bayard, Clémence; Colin, Cécile; Berthommier, Frédéric

2014-01-01

Audiovisual speech perception of children with specific language impairment (SLI) and children with typical language development (TLD) was compared in two experiments using /aCa/ syllables presented in the context of a masking release paradigm. Children had to repeat syllables presented in auditory alone, visual alone (speechreading), audiovisual congruent and incongruent (McGurk) conditions. Stimuli were masked by either stationary (ST) or amplitude modulated (AM) noise. Although children with SLI were less accurate in auditory and audiovisual speech perception, they showed similar auditory masking release effect than children with TLD. Children with SLI also had less correct responses in speechreading than children with TLD, indicating impairment in phonemic processing of visual speech information. In response to McGurk stimuli, children with TLD showed more fusions in AM noise than in ST noise, a consequence of the auditory masking release effect and of the influence of visual information. Children with SLI did not show this effect systematically, suggesting they were less influenced by visual speech. However, when the visual cues were easily identified, the profile of responses to McGurk stimuli was similar in both groups, suggesting that children with SLI do not suffer from an impairment of audiovisual integration. An analysis of percent of information transmitted revealed a deficit in the children with SLI, particularly for the place of articulation feature. Taken together, the data support the hypothesis of an intact peripheral processing of auditory speech information, coupled with a supra modal deficit of phonemic categorization in children with SLI. Clinical implications are discussed.

Autonomic Nervous System Responses During Perception of Masked Speech may Reflect Constructs other than Subjective Listening Effort

PubMed Central

Francis, Alexander L.; MacPherson, Megan K.; Chandrasekaran, Bharath; Alvar, Ann M.

2016-01-01

Typically, understanding speech seems effortless and automatic. However, a variety of factors may, independently or interactively, make listening more effortful. Physiological measures may help to distinguish between the application of different cognitive mechanisms whose operation is perceived as effortful. In the present study, physiological and behavioral measures associated with task demand were collected along with behavioral measures of performance while participants listened to and repeated sentences. The goal was to measure psychophysiological reactivity associated with three degraded listening conditions, each of which differed in terms of the source of the difficulty (distortion, energetic masking, and informational masking), and therefore were expected to engage different cognitive mechanisms. These conditions were chosen to be matched for overall performance (keywords correct), and were compared to listening to unmasked speech produced by a natural voice. The three degraded conditions were: (1) Unmasked speech produced by a computer speech synthesizer, (2) Speech produced by a natural voice and masked byspeech-shaped noise and (3) Speech produced by a natural voice and masked by two-talker babble. Masked conditions were both presented at a -8 dB signal to noise ratio (SNR), a level shown in previous research to result in comparable levels of performance for these stimuli and maskers. Performance was measured in terms of proportion of key words identified correctly, and task demand or effort was quantified subjectively by self-report. Measures of psychophysiological reactivity included electrodermal (skin conductance) response frequency and amplitude, blood pulse amplitude and pulse rate. Results suggest that the two masked conditions evoked stronger psychophysiological reactivity than did the two unmasked conditions even when behavioral measures of listening performance and listeners’ subjective perception of task demand were comparable across the three degraded conditions. PMID:26973564

A masked least-squares smoothing procedure for artifact reduction in scanning-EMG recordings.

PubMed

Corera, Íñigo; Eciolaza, Adrián; Rubio, Oliver; Malanda, Armando; Rodríguez-Falces, Javier; Navallas, Javier

2018-01-11

Scanning-EMG is an electrophysiological technique in which the electrical activity of the motor unit is recorded at multiple points along a corridor crossing the motor unit territory. Correct analysis of the scanning-EMG signal requires prior elimination of interference from nearby motor units. Although the traditional processing based on the median filtering is effective in removing such interference, it distorts the physiological waveform of the scanning-EMG signal. In this study, we describe a new scanning-EMG signal processing algorithm that preserves the physiological signal waveform while effectively removing interference from other motor units. To obtain a cleaned-up version of the scanning signal, the masked least-squares smoothing (MLSS) algorithm recalculates and replaces each sample value of the signal using a least-squares smoothing in the spatial dimension, taking into account the information of only those samples that are not contaminated with activity of other motor units. The performance of the new algorithm with simulated scanning-EMG signals is studied and compared with the performance of the median algorithm and tested with real scanning signals. Results show that the MLSS algorithm distorts the waveform of the scanning-EMG signal much less than the median algorithm (approximately 3.5 dB gain), being at the same time very effective at removing interference components. Graphical Abstract The raw scanning-EMG signal (left figure) is processed by the MLSS algorithm in order to remove the artifact interference. Firstly, artifacts are detected from the raw signal, obtaining a validity mask (central figure) that determines the samples that have been contaminated by artifacts. Secondly, a least-squares smoothing procedure in the spatial dimension is applied to the raw signal using the not contaminated samples according to the validity mask. The resulting MLSS-processed scanning-EMG signal (right figure) is clean of artifact interference.

Error response test system and method using test mask variable

NASA Technical Reports Server (NTRS)

Gender, Thomas K. (Inventor)

2006-01-01

An error response test system and method with increased functionality and improved performance is provided. The error response test system provides the ability to inject errors into the application under test to test the error response of the application under test in an automated and efficient manner. The error response system injects errors into the application through a test mask variable. The test mask variable is added to the application under test. During normal operation, the test mask variable is set to allow the application under test to operate normally. During testing, the error response test system can change the test mask variable to introduce an error into the application under test. The error response system can then monitor the application under test to determine whether the application has the correct response to the error.

Development and recent results from the Subaru coronagraphic extreme adaptive optics system

NASA Astrophysics Data System (ADS)

Jovanovic, N.; Guyon, O.; Martinache, F.; Clergeon, C.; Singh, G.; Kudo, T.; Newman, K.; Kuhn, J.; Serabyn, E.; Norris, B.; Tuthill, P.; Stewart, P.; Huby, E.; Perrin, G.; Lacour, S.; Vievard, S.; Murakami, N.; Fumika, O.; Minowa, Y.; Hayano, Y.; White, J.; Lai, O.; Marchis, F.; Duchene, G.; Kotani, T.; Woillez, J.

2014-07-01

The Subaru Coronagraphic Extreme Adaptive Optics (SCExAO) instrument is one of a handful of extreme adaptive optics systems set to come online in 2014. The extreme adaptive optics correction is realized by a combination of precise wavefront sensing via a non-modulated pyramid wavefront sensor and a 2000 element deformable mirror. This system has recently begun on-sky commissioning and was operated in closed loop for several minutes at a time with a loop speed of 800 Hz, on ~150 modes. Further suppression of quasi-static speckles is possible via a process called "speckle nulling" which can create a dark hole in a portion of the frame allowing for an enhancement in contrast, and has been successfully tested on-sky. In addition to the wavefront correction there are a suite of coronagraphs on board to null out the host star which include the phase induced amplitude apodization (PIAA), the vector vortex, 8 octant phase mask, 4 quadrant phase mask and shaped pupil versions which operate in the NIR (y-K bands). The PIAA and vector vortex will allow for high contrast imaging down to an angular separation of 1 λ/D to be reached; a factor of 3 closer in than other extreme AO systems. Making use of the left over visible light not used by the wavefront sensor is VAMPIRES and FIRST. These modules are based on aperture masking interferometry and allow for sub-diffraction limited imaging with moderate contrasts of ~100-1000:1. Both modules have undergone initial testing on-sky and are set to be fully commissioned by the end of 2014.

Particulate face masks for protection against airborne pathogens - one size does not fit all: an observational study.

PubMed

Winter, Susan; Thomas, Jane H; Stephens, Dianne P; Davis, Joshua S

2010-03-01

To determine the proportion of hospital staff who pass fit tests with each of three commonly used particulate face masks, and factors influencing preference and fit test results. Observational study. 50 healthy hospital staff volunteers in an 18-bed general intensive care unit in an Australian teaching hospital. Participants were administered a questionnaire about mask use and their preferred mask and underwent qualitative fit-testing with each of three different particulate masks: Kimberly-Clark Tecnol FluidShield N95 particulate filter respirator (KC), 3M Flat Fold 9320 particulate respirator and 3M 8822 particulate respirator with exhalation valve. Participants who failed fittesting were trained in correct mask donning, and fittesting was repeated. Proportion of participants who passed the fit test for each mask and the effect of training. The proportion of participants who passed a fit test was low for all three masks tested (KC, 16%; flat fold, 28%; and valved, 34%). Rates improved after training: the first mask tested fitted in 18% of participants pre-training and 40% post-training (P = 0.02). None of the masks fitted for 28% of participants. There were no significant predictors of fit-test results. A large proportion of individuals failed a fit test with any given mask, and we were not able to identify any factors that predicted mask fit in individuals. Training on mask use improved the rates of adequate fit. Hospitals should carry a range of P2 masks, and should conduct systematic P2 mask training and fit-testing programs for all staff potentially exposed to airborne pathogens.

Preserved subliminal processing and impaired conscious access in schizophrenia

PubMed Central

Del Cul, Antoine; Dehaene, Stanislas; Leboyer, Marion

2006-01-01

Background Studies of visual backward masking have frequently revealed an elevated masking threshold in schizophrenia. This finding has frequently been interpreted as indicating a low-level visual deficit. However, more recent models suggest that masking may also involve late and higher-level integrative processes, while leaving intact early “bottom-up” visual processing. Objectives We tested the hypothesis that the backward masking deficit in schizophrenia corresponds to a deficit in the late stages of conscious perception, whereas the subliminal processing of masked stimuli is fully preserved. Method 28 patients with schizophrenia and 28 normal controls performed two backward-masking experiments. We used Arabic digits as stimuli and varied quasi-continuously the interval with a subsequent mask, thus allowing us to progressively “unmask” the stimuli. We finely quantified their degree of visibility using both objective and subjective measures to evaluate the threshold duration for access to consciousness. We also studied the priming effect caused by the variably masked numbers on a comparison task performed on a subsequently presented and highly visible target number. Results The threshold delay between digit and mask necessary for the conscious perception of the masked stimulus was longer in patients compared to control subjects. This higher consciousness threshold in patients was confirmed by an objective and a subjective measure, and both measures were highly correlated for patients as well as for controls. However, subliminal priming of masked numbers was effective and identical in patients compared to controls. Conclusions Access to conscious report of masked stimuli is impaired in schizophrenia, while fast bottom-up processing of the same stimuli, as assessed by subliminal priming, is preserved. These findings suggest a high-level origin of the masking deficit in schizophrenia, although they leave open for further research its exact relation to previously identified bottom-up visual processing abnormalities. PMID:17146006

FPGA chip performance improvement with gate shrink through alternating PSM 90nm process

NASA Astrophysics Data System (ADS)

Yu, Chun-Chi; Shieh, Ming-Feng; Liu, Erick; Lin, Benjamin; Ho, Jonathan; Wu, Xin; Panaite, Petrisor; Chacko, Manoj; Zhang, Yunqiang; Lei, Wen-Kang

2005-11-01

In the post-physical verification space called 'Mask Synthesis' a key component of design-for-manufacturing (DFM), double-exposure based, dark-field, alternating PSM (Alt-PSM) is being increasingly applied at the 90nm node in addition with other mature resolution enhancement techniques (RETs) such as optical proximity correction (OPC) and sub-resolution assist features (SRAF). Several high-performance IC manufacturers already use alt-PSM technology in 65nm production. At 90nm having strong control over the lithography process is a critical component in meeting targeted yield goals. However, implementing alt-PSM in production has been challenging due to several factors such as phase conflict errors, mask manufacturing, and the increased production cost due to the need for two masks in the process. Implementation of Alt-PSM generally requires phase compliance rules and proper phase topology in the layout and this has been successful for the technology node with these rules implemented. However, this may not be true for a mature, production process technology, in this case 90 nm. Especially, in the foundry-fabless business model where the foundry provides a standard set of design rules to its customers for a given process technology, and where not all the foundry customers require Alt-PSM in their tapeout flow. With minimum design changes, design houses usually are motivated by higher product performance for the existing designs. What follows is an in-depth review of the motivation to apply alt-PSM on a production FPGA, the DFM challenges to each partner faced, its effect on the tapeout flow, and how design, manufacturing, and EDA teams worked together to resolve phase conflicts, tapeout the chip, and finally verify the silicon results in production.

Clean induced feature CD shift of EUV mask

NASA Astrophysics Data System (ADS)

Nesládek, Pavel; Schedel, Thorsten; Bender, Markus

2016-05-01

EUV developed in the last decade to the most promising <7nm technology candidate. Defects are considered to be one of the most critical issues of the EUV mask. There are several contributors which make the EUV mask so different from the optical one. First one is the significantly more complicated mask stack consisting currently of 40 Mo/Si double layers, covered by Ru capping layer and TaN/TaO absorber/anti-reflective coating on top of the front face of the mask. Backside is in contrary to optical mask covered as well by conductive layer consisting of Cr or CrN. Second contributor is the fact that EUV mask is currently in contrary to optical mask not yet equipped with sealed pellicle, leading to much higher risk of mask contamination. Third reason is use of EUV mask in vacuum, possibly leading to deposition of vacuum contaminants on the EUV mask surface. Latter reason in combination with tight requirements on backside cleanliness lead to the request of frequent recleaning of the EUV mask, in order to sustain mask lifetime similar to that of optical mask. Mask cleaning process alters slightly the surface of any mask - binary COG mask, as well as phase shift mask of any type and naturally also of the EUV mask as well. In case of optical masks the changes are almost negligible, as the mask is exposed to max. 10-20 re-cleans within its life time. These modifications can be expressed in terms of different specified parameters, e.g. CD shift, phase/trans shift, change of the surface roughness etc. The CD shift, expressed as thinning (or exceptionally thickening) of the dark features on the mask is typically in order of magnitude 0.1nm per process run, which is completely acceptable for optical mask. Projected on the lifetime of EUV mask, assuming 100 clean process cycles, this will lead to CD change of about 10nm. For this reason the requirements for EUV mask cleaning are significantly tighter, << 0.1 nm per process run. This task will look even more challenging, when considering, that the tools for CD measurement at the EUV mask are identical as for optical mask. There is one aspect influencing the CD shift, which demands attention. The mask composition of the EUV mask is significantly different from the optical mask. More precisely there are 2 materials influencing the estimated CD in case of EUV mask, whereas there is one material only in case of optical masks, in first approximation. For optical masks, the CD changes can be attributed to modification of the absorber/ARC layer, as the quartz substrate can be hardly modified by the wet process. For EUV Masks chemical modification of the Ru capping layer - thinning, oxidization etc. are rather more probable and we need to take into account, how this effects can influence the CD measurement process. CD changes measured can be interpreted as either change in the feature size, or modification of the chemical nature of both absorber/ARC layer stack and the Ru capping layer. In our work we try to separate the effect of absorber and Ru/capping layer on the CD shift observed and propose independent way of estimation both parameters.

Alternating phase-shifted mask for logic gate levels, design, and mask manufacturing

NASA Astrophysics Data System (ADS)

Liebmann, Lars W.; Graur, Ioana C.; Leipold, William C.; Oberschmidt, James M.; O'Grady, David S.; Regaill, Denis

1999-07-01

While the benefits of alternating phase shifted masks in improving lithographic process windows at increased resolution are well known throughout the lithography community, broad implementation of this potentially powerful technique has been slow due to the inherent complexity of the layout design and mask manufacturing process. This paper will review a project undertaken at IBM's Semiconductor Research and Development Center and Mask Manufacturing and Development facility to understand the technical and logistical issues associated with the application of alternating phase shifted mask technology to the gate level of a full microprocessor chip. The work presented here depicts an important milestone toward integration of alternating phase shifted masks into the manufacturing process by demonstrating an automated design solution and yielding a functional alternating phase shifted mask. The design conversion of the microprocessor gate level to a conjugate twin shifter alternating phase shift layout was accomplished with IBM's internal design system that automatically scaled the design, added required phase regions, and resolved phase conflicts. The subsequent fabrication of a nearly defect free phase shifted mask, as verified by SEM based die to die inspection, highlights the maturity of the alternating phase shifted mask manufacturing process in IBM's internal mask facility. Well defined and recognized challenges in mask inspection and repair remain and the layout of alternating phase shifted masks present a design and data preparation overhead, but the data presented here demonstrate the feasibility of designing and building manufacturing quality alternating phase shifted masks for the gate level of a microprocessor.

Defect reduction for semiconductor memory applications using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Ye, Zhengmao; Luo, Kang; Lu, Xiaoming; Fletcher, Brian; Liu, Weijun; Xu, Frank; LaBrake, Dwayne; Resnick, Douglas J.; Sreenivasan, S. V.

2012-07-01

Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the defect specifications of high-end memory devices. Defects occurring during imprinting can generally be broken into two categories; random defects and repeating defects. Examples of random defects include fluid phase imprint defects, such as bubbles, and solid phase imprint defects, such as line collapse. Examples of repeater defects include mask fabrication defects and particle induced defects. Previous studies indicated that soft particles cause nonrepeating defects. Hard particles, on the other hand, can cause either permanent resist plugging or mask damage. In a previous study, two specific defect types were examined; random nonfill defects occurring during the resist filling process and repeater defects caused by interactions with particles on the substrate. We attempted to identify the different types of imprint defect types using a mask with line/space patterns at dimensions as small as 26 nm. An Imprio 500 twenty-wafer per hour development tool was used to study the various defect types. The imprint defect density was reduced nearly four orders of magnitude, down to ˜4/cm2 in a period of two years following the availability of low defect imprint masks at 26-nm half-pitch. This reduction was achieved by identifying the root cause of various defects and then taking the appropriate corrective action.

New mask technology challenges

NASA Astrophysics Data System (ADS)

Kimmel, Kurt R.

2001-09-01

Mask technology development has accelerated dramatically in recent years from the glacial pace of the last three decades to the rapid and sometimes simultaneous introductions of new wavelengths and mask-based resolution enhancement techniques. The nature of the semiconductor business has also become one driven by time-to-market as an overwhelming factor in capturing market share and profit. These are among the factors that have created enormous stress on the mask industry to produce masks with enhanced capabilities, such as phase-shifting attenuators, sub-resolution assist bars, and optical proximity correction (OPC) features, while maintaining or reducing cost and cycle time. The mask can no longer be considered a commodity item that is purchased form the lowest-cost supplier. Instead, it must now be promoted as an integral part of the technical and business case for a total lithographic solution. Improving partnership between designer, mask-maker, and wafer lithographer will be the harbinger of success in finding a profitable balance of capability, cost, and cycle time. Likewise for equipment infrastructure development, stronger partnership on the international level is necessary to control development cost and mitigate schedule and technical risks.

The future of 2D metrology for display manufacturing

NASA Astrophysics Data System (ADS)

Sandstrom, Tor; Wahlsten, Mikael; Park, Youngjin

2016-10-01

The race to 800 PPI and higher in mobile devices and the transition to OLED displays are driving a dramatic development of mask quality: resolution, CDU, registration, and complexity. 2D metrology for large area masks is necessary and must follow the roadmap. Driving forces in the market place point to continued development of even more dense displays. State-of-the-art metrology has proven itself capable of overlay below 40 nm and registration below 65 nm for G6 masks. Future developments include incoming and recurrent measurements of pellicalized masks at the panel maker's factory site. Standardization of coordinate systems across supplier networks is feasible. This will enable better yield and production economy for both mask and panel maker. Better distortion correction methods will give better registration on the panels and relax the flatness requirements of the mask blanks. If panels are measured together with masks and the results are used to characterize the aligners, further quality and yield improvements are possible. Possible future developments include in-cell metrology and integration with other instruments in the same platform.

Expanding the printable design space for lithography processes utilizing a cut mask

NASA Astrophysics Data System (ADS)

Wandell, Jerome; Salama, Mohamed; Wilkinson, William; Curtice, Mark; Feng, Jui-Hsuan; Gao, Shao Wen; Asthana, Abhishek

2016-03-01

The utilization of a cut-mask in semiconductor patterning processes has been in practice for logic devices since the inception of 32nm-node devices, notably with unidirectional gate level printing. However, the microprocessor applications where cut-mask patterning methods are used are expanding as Self-Aligned Double Patterning (SADP) processes become mainstream for 22/14nm fin diffusion, and sub-14nm metal levels. One common weakness for these types of lithography processes is that the initial pattern requiring the follow-up cut-mask typically uses an extreme off-axis imaging source such as dipole to enhance the resolution and line-width roughness (LWR) for critical dense patterns. This source condition suffers from poor process margin in the semi-dense (forbidden pitch) realm and wrong-way directional design spaces. Common pattern failures in these limited design regions include bridging and extra-printing defects that are difficult to resolve with traditional mask improvement means. This forces the device maker to limit the allowable geometries that a designer may use on a device layer. This paper will demonstrate methods to expand the usable design space on dipole-like processes such as unidirectional gate and SADP processes by utilizing the follow-up cut mask to improve the process window. Traditional mask enhancement means for improving the process window in this design realm will be compared to this new cut-mask approach. The unique advantages and disadvantages of the cut-mask solution will be discussed in contrast to those customary methods.

Writing next-generation display photomasks

NASA Astrophysics Data System (ADS)

Sandstrom, Tor; Wahlsten, Mikael; Park, Youngjin

2016-10-01

Recent years have seen a fast technical development within the display area. Displays get ever higher pixel density and the pixels get smaller. Current displays have over 800 PPI and market forces will eventually drive for densities of 2000 PPI or higher. The transistor backplanes also get more complex. OLED displays require 4-7 transistors per pixel instead of the typical 1-2 transistors used for LCDs, and they are significantly more sensitive to errors. New large-area maskwriters have been developed for masks used in high volume production of screens for state-of-theart smartphones. Redesigned laser optics with higher NA and lower aberrations improve resolution and CD uniformity and reduce mura effects. The number of beams has been increased to maintain the throughput despite the higher writing resolution. OLED displays are highly sensitive to placement errors and registration in the writers has been improved. To verify the registration of produced masks a separate metrology system has been developed. The metrology system is self-calibrated to high accuracy. The calibration is repeatable across machines and sites using Z-correction. The repeatability of the coordinate system makes it possible to standardize the coordinate system across an entire supply chain or indeed across the entire industry. In-house metrology is a commercial necessity for high-end mask shop, but also the users of the masks, the panel makers, would benefit from having in-house metrology. It would act as the reference for their mask suppliers, give better predictive and post mortem diagnostic power for the panel process, and the metrology could be used to characterize and improve the entire production loop from data to panel.

EUV mask pilot line at Intel Corporation

NASA Astrophysics Data System (ADS)

Stivers, Alan R.; Yan, Pei-Yang; Zhang, Guojing; Liang, Ted; Shu, Emily Y.; Tejnil, Edita; Lieberman, Barry; Nagpal, Rajesh; Hsia, Kangmin; Penn, Michael; Lo, Fu-Chang

2004-12-01

The introduction of extreme ultraviolet (EUV) lithography into high volume manufacturing requires the development of a new mask technology. In support of this, Intel Corporation has established a pilot line devoted to encountering and eliminating barriers to manufacturability of EUV masks. It concentrates on EUV-specific process modules and makes use of the captive standard photomask fabrication capability of Intel Corporation. The goal of the pilot line is to accelerate EUV mask development to intersect the 32nm technology node. This requires EUV mask technology to be comparable to standard photomask technology by the beginning of the silicon wafer process development phase for that technology node. The pilot line embodies Intel's strategy to lead EUV mask development in the areas of the mask patterning process, mask fabrication tools, the starting material (blanks) and the understanding of process interdependencies. The patterning process includes all steps from blank defect inspection through final pattern inspection and repair. We have specified and ordered the EUV-specific tools and most will be installed in 2004. We have worked with International Sematech and others to provide for the next generation of EUV-specific mask tools. Our process of record is run repeatedly to ensure its robustness. This primes the supply chain and collects information needed for blank improvement.

Clinical benefit and preservation of flavonols in dark chocolate manufacturing.

PubMed

McShea, Andrew; Ramiro-Puig, Emma; Munro, Sandra B; Casadesus, Gemma; Castell, Margarida; Smith, Mark A

2008-11-01

The consumption of high-cacao-content chocolate has been associated with positive health benefits ascribed to flavanol [corrected] antioxidants derived from the ground, fermented cocoa seeds of Theobroma cacao. However, flavanols [corrected] impart a bitter, astringent flavor to foodstuffs, frequently masked in chocolates and confections by aggressive processing and adulteration with other flavors. Recent reports have implied that not all varieties of dark chocolate are created equally, and significant caveats exist regarding its potential health benefits. It is perhaps not surprising that extensive processing, dilution, and the addition of flavor modifiers may improve the palatability of chocolate, but could have negative nutritional and clinical benefits. This article examines the chemical composition of chocolate and the clinical data associated with the consumption of flavonoid-rich cocoa. We review the steps in chocolate manufacturing that directly affect the antioxidant levels in chocolate products, and the caveats associated with claims of health benefits from the consumption of dark chocolate.

Effect of Masked Regions on Weak-lensing Statistics

NASA Astrophysics Data System (ADS)

Shirasaki, Masato; Yoshida, Naoki; Hamana, Takashi

2013-09-01

Sky masking is unavoidable in wide-field weak-lensing observations. We study how masks affect the measurement of statistics of matter distribution probed by weak gravitational lensing. We first use 1000 cosmological ray-tracing simulations to examine in detail the impact of masked regions on the weak-lensing Minkowski Functionals (MFs). We consider actual sky masks used for a Subaru Suprime-Cam imaging survey. The masks increase the variance of the convergence field and the expected values of the MFs are biased. The bias then compromises the non-Gaussian signals induced by the gravitational growth of structure. We then explore how masks affect cosmological parameter estimation. We calculate the cumulative signal-to-noise ratio (S/N) for masked maps to study the information content of lensing MFs. We show that the degradation of S/N for masked maps is mainly determined by the effective survey area. We also perform simple χ2 analysis to show the impact of lensing MF bias due to masked regions. Finally, we compare ray-tracing simulations with data from a Subaru 2 deg2 survey in order to address if the observed lensing MFs are consistent with those of the standard cosmology. The resulting χ2/n dof = 29.6/30 for three combined MFs, obtained with the mask effects taken into account, suggests that the observational data are indeed consistent with the standard ΛCDM model. We conclude that the lensing MFs are a powerful probe of cosmology only if mask effects are correctly taken into account.

Procedures for dealing with certain types of noise and systematic errors common to many Hadamard transform optical systems

NASA Technical Reports Server (NTRS)

Harwit, M.

1977-01-01

Sources of noise and error correcting procedures characteristic of Hadamard transform optical systems were investigated. Reduction of spectral noise due to noise spikes in the data, the effect of random errors, the relative performance of Fourier and Hadamard transform spectrometers operated under identical detector-noise-limited conditions, and systematic means for dealing with mask defects are among the topics discussed. The distortion in Hadamard transform optical instruments caused by moving Masks, incorrect mask alignment, missing measurements, and diffraction is analyzed and techniques for reducing or eliminating this distortion are described.

ILT based defect simulation of inspection images accurately predicts mask defect printability on wafer

NASA Astrophysics Data System (ADS)

Deep, Prakash; Paninjath, Sankaranarayanan; Pereira, Mark; Buck, Peter

2016-05-01

At advanced technology nodes mask complexity has been increased because of large-scale use of resolution enhancement technologies (RET) which includes Optical Proximity Correction (OPC), Inverse Lithography Technology (ILT) and Source Mask Optimization (SMO). The number of defects detected during inspection of such mask increased drastically and differentiation of critical and non-critical defects are more challenging, complex and time consuming. Because of significant defectivity of EUVL masks and non-availability of actinic inspection, it is important and also challenging to predict the criticality of defects for printability on wafer. This is one of the significant barriers for the adoption of EUVL for semiconductor manufacturing. Techniques to decide criticality of defects from images captured using non actinic inspection images is desired till actinic inspection is not available. High resolution inspection of photomask images detects many defects which are used for process and mask qualification. Repairing all defects is not practical and probably not required, however it's imperative to know which defects are severe enough to impact wafer before repair. Additionally, wafer printability check is always desired after repairing a defect. AIMSTM review is the industry standard for this, however doing AIMSTM review for all defects is expensive and very time consuming. Fast, accurate and an economical mechanism is desired which can predict defect printability on wafer accurately and quickly from images captured using high resolution inspection machine. Predicting defect printability from such images is challenging due to the fact that the high resolution images do not correlate with actual mask contours. The challenge is increased due to use of different optical condition during inspection other than actual scanner condition, and defects found in such images do not have correlation with actual impact on wafer. Our automated defect simulation tool predicts printability of defects at wafer level and automates the process of defect dispositioning from images captured using high resolution inspection machine. It first eliminates false defects due to registration, focus errors, image capture errors and random noise caused during inspection. For the remaining real defects, actual mask-like contours are generated using the Calibre® ILT solution [1][2], which is enhanced to predict the actual mask contours from high resolution defect images. It enables accurate prediction of defect contours, which is not possible from images captured using inspection machine because some information is already lost due to optical effects. Calibre's simulation engine is used to generate images at wafer level using scanner optical conditions and mask-like contours as input. The tool then analyses simulated images and predicts defect printability. It automatically calculates maximum CD variation and decides which defects are severe to affect patterns on wafer. In this paper, we assess the printability of defects for the mask of advanced technology nodes. In particular, we will compare the recovered mask contours with contours extracted from SEM image of the mask and compare simulation results with AIMSTM for a variety of defects and patterns. The results of printability assessment and the accuracy of comparison are presented in this paper. We also suggest how this method can be extended to predict printability of defects identified on EUV photomasks.

Selective spatial attention modulates bottom-up informational masking of speech

PubMed Central

Carlile, Simon; Corkhill, Caitlin

2015-01-01

To hear out a conversation against other talkers listeners overcome energetic and informational masking. Largely attributed to top-down processes, information masking has also been demonstrated using unintelligible speech and amplitude-modulated maskers suggesting bottom-up processes. We examined the role of speech-like amplitude modulations in information masking using a spatial masking release paradigm. Separating a target talker from two masker talkers produced a 20 dB improvement in speech reception threshold; 40% of which was attributed to a release from informational masking. When across frequency temporal modulations in the masker talkers are decorrelated the speech is unintelligible, although the within frequency modulation characteristics remains identical. Used as a masker as above, the information masking accounted for 37% of the spatial unmasking seen with this masker. This unintelligible and highly differentiable masker is unlikely to involve top-down processes. These data provides strong evidence of bottom-up masking involving speech-like, within-frequency modulations and that this, presumably low level process, can be modulated by selective spatial attention. PMID:25727100

Selective spatial attention modulates bottom-up informational masking of speech.

PubMed

Carlile, Simon; Corkhill, Caitlin

2015-03-02

To hear out a conversation against other talkers listeners overcome energetic and informational masking. Largely attributed to top-down processes, information masking has also been demonstrated using unintelligible speech and amplitude-modulated maskers suggesting bottom-up processes. We examined the role of speech-like amplitude modulations in information masking using a spatial masking release paradigm. Separating a target talker from two masker talkers produced a 20 dB improvement in speech reception threshold; 40% of which was attributed to a release from informational masking. When across frequency temporal modulations in the masker talkers are decorrelated the speech is unintelligible, although the within frequency modulation characteristics remains identical. Used as a masker as above, the information masking accounted for 37% of the spatial unmasking seen with this masker. This unintelligible and highly differentiable masker is unlikely to involve top-down processes. These data provides strong evidence of bottom-up masking involving speech-like, within-frequency modulations and that this, presumably low level process, can be modulated by selective spatial attention.

Revisiting adoption of high transmission PSM: pros, cons and path forward

NASA Astrophysics Data System (ADS)

Ma, Z. Mark; McDonald, Steve; Progler, Chris

2009-12-01

High transmission attenuated phase shift masks (Hi-T PSM) have been successfully applied in volume manufacturing for certain memory devices. Moreover, numerous studies have shown the potential benefits of Hi-T PSM for specific lithography applications. In this paper, the potential for extending Hi-T PSM to logic devices, is revisited with an emphasis on understanding layout, transmission, and manufacturing of Hi-T PSM versus traditional 6% embedded attenuated phase shift mask (EAPSM). Simulations on various layouts show Hi-T PSM has advantage over EAPSM in low duty cycle line patterns and high duty cycle space patterns. The overall process window can be enhanced when Hi- T PSM is combined with optimized optical proximity correction (OPC), sub-resolution assist features (SRAF), and source illumination. Therefore, Hi-T PSM may be a viable and lower cost alternative to other complex resolution enhancement technology (RET) approaches. Aerial image measurement system (AIMS) results on test masks, based on an inverse lithography technology (ILT) generated layout, confirm the simulation results. New advancement in high transmission blanks also make low topography Hi-T PSM a reality, which can minimize scattering effects in high NA lithography.

Optimizing defect inspection strategy through the use of design-aware database control layers

NASA Astrophysics Data System (ADS)

Stoler, Dvori; Ruch, Wayne; Ma, Weimin; Chakravarty, Swapnajit; Liu, Steven; Morgan, Ray; Valadez, John; Moore, Bill; Burns, John

2007-10-01

Resolution limitations in the mask making process can cause differences between the features that appear in a database and those printed to a reticle. These differences may result from intentional or unintentional features in the database exceeding the resolution limit of the mask making process such as small gaps or lines in the data, line end shortening on small sub-resolution assist features etc creating challenges to both mask writing and mask inspection. Areas with high variance from design to mask, often referred to as high MEEF areas (mask error enhancement factor), become highly problematic and can directly impact mask and device yield, mask manufacturing cycle time and ultimately mask costs. Specific to mask inspection it may be desirable to inspect certain non-critical or non-relevant features at reduced sensitivity so as not to detect real, but less significant process defects. In contrast there may also be times where increased sensitivity is required for critical mask features or areas. Until recently, this process was extremely manual, creating added time and cost to the mask inspection cycle. Shifting to more intelligent and automated inspection flows is the key focus of this paper. A novel approach to importing design data directly into the mask inspection to include both MDP generated MRC errors files and LRC generated MEEF files. The results of recently developed inspection and review capability based upon controlling defect inspection using design aware data base control layers on a pixel basis are discussed. Typical mask shop applications and implementations will be shown.

Facile preparation of porous alumina through-hole masks for sputtering by two-layer anodization

NASA Astrophysics Data System (ADS)

Yanagishita, Takashi; Masuda, Hideki

2016-08-01

Highly ordered porous alumina through-hole masks were fabricated on a substrate by combining two-layer anodization with subsequent through-holing by selective etching. This process allowed the fabrication of porous alumina masks without an increase in pore size during the etching performed for through-holing. Additionally, the process contributed to improved operability in the setting of the masks on substrates because the second anodizing layer acts as a supporting layer for the handling of the mask. The fabrication of ordered Au nanodot arrays was demonstrated as an example application of the through-hole masks obtained by the present process.

Temporal masking of multidimensional tactual stimuli

NASA Astrophysics Data System (ADS)

Tan, Hong Z.; Reed, Charlotte M.; Delhorne, Lorraine A.; Durlach, Nathaniel I.; Wan, Natasha

2003-12-01

Experiments were performed to examine the temporal masking properties of multidimensional tactual stimulation patterns delivered to the left index finger. The stimuli consisted of fixed-frequency sinusoidal motions in the kinesthetic (2 or 4 Hz), midfrequency (30 Hz), and cutaneous (300 Hz) frequency ranges. Seven stimuli composed of one, two, or three spectral components were constructed at each of two signal durations (125 or 250 ms). Subjects identified target signals under three different masking paradigms: forward masking, backward masking, and sandwiched masking (in which the target is presented between two maskers). Target identification was studied as a function of interstimulus interval (ISI) in the range 0 to 640 ms. For both signal durations, percent-correct scores increased with ISI for each of the three masking paradigms. Scores with forward and backward masking were similar and significantly higher than scores obtained with sandwiched masking. Analyses of error trials revealed that subjects showed a tendency to respond, more often than chance, with the masker, the composite of the masker and target, or the combination of the target and a component of the masker. The current results are compared to those obtained in previous studies of tactual recognition masking with brief cutaneous spatial patterns. The results are also discussed in terms of estimates of information transfer (IT) and IT rate, are compared to previous studies with multidimensional tactual signals, and are related to research on the development of tactual aids for the deaf.

Subliminal Emotional Words Impact Syntactic Processing: Evidence from Performance and Event-Related Brain Potentials.

PubMed

Jiménez-Ortega, Laura; Espuny, Javier; de Tejada, Pilar Herreros; Vargas-Rivero, Carolina; Martín-Loeches, Manuel

2017-01-01

Recent studies demonstrate that syntactic processing can be affected by emotional information and that subliminal emotional information can also affect cognitive processes. In this study, we explore whether unconscious emotional information may also impact syntactic processing. In an Event-Related brain Potential (ERP) study, positive, neutral and negative subliminal adjectives were inserted within neutral sentences, just before the presentation of the supraliminal adjective. They could either be correct (50%) or contain a morphosyntactic violation (number or gender disagreements). Larger error rates were observed for incorrect sentences than for correct ones, in contrast to most studies using supraliminal information. Strikingly, emotional adjectives affected the conscious syntactic processing of sentences containing morphosyntactic anomalies. The neutral condition elicited left anterior negativity (LAN) followed by a P600 component. However, a lack of anterior negativity and an early P600 onset for the negative condition were found, probably as a result of the negative subliminal correct adjective capturing early syntactic resources. Positive masked adjectives in turn prompted an N400 component in response to morphosyntactic violations, probably reflecting the induction of a heuristic processing mode involving access to lexico-semantic information to solve agreement anomalies. Our results add to recent evidence on the impact of emotional information on syntactic processing, while showing that this can occur even when the reader is unaware of the emotional stimuli.

Subliminal Emotional Words Impact Syntactic Processing: Evidence from Performance and Event-Related Brain Potentials

PubMed Central

Jiménez-Ortega, Laura; Espuny, Javier; de Tejada, Pilar Herreros; Vargas-Rivero, Carolina; Martín-Loeches, Manuel

2017-01-01

Recent studies demonstrate that syntactic processing can be affected by emotional information and that subliminal emotional information can also affect cognitive processes. In this study, we explore whether unconscious emotional information may also impact syntactic processing. In an Event-Related brain Potential (ERP) study, positive, neutral and negative subliminal adjectives were inserted within neutral sentences, just before the presentation of the supraliminal adjective. They could either be correct (50%) or contain a morphosyntactic violation (number or gender disagreements). Larger error rates were observed for incorrect sentences than for correct ones, in contrast to most studies using supraliminal information. Strikingly, emotional adjectives affected the conscious syntactic processing of sentences containing morphosyntactic anomalies. The neutral condition elicited left anterior negativity (LAN) followed by a P600 component. However, a lack of anterior negativity and an early P600 onset for the negative condition were found, probably as a result of the negative subliminal correct adjective capturing early syntactic resources. Positive masked adjectives in turn prompted an N400 component in response to morphosyntactic violations, probably reflecting the induction of a heuristic processing mode involving access to lexico-semantic information to solve agreement anomalies. Our results add to recent evidence on the impact of emotional information on syntactic processing, while showing that this can occur even when the reader is unaware of the emotional stimuli. PMID:28487640

High order field-to-field corrections for imaging and overlay to achieve sub 20-nm lithography requirements

NASA Astrophysics Data System (ADS)

Mulkens, Jan; Kubis, Michael; Hinnen, Paul; de Graaf, Roelof; van der Laan, Hans; Padiy, Alexander; Menchtchikov, Boris

2013-04-01

Immersion lithography is being extended to the 20-nm and 14-nm node and the lithography performance requirements need to be tightened further to enable this shrink. In this paper we present an integral method to enable high-order fieldto- field corrections for both imaging and overlay, and we show that this method improves the performance with 20% - 50%. The lithography architecture we build for these higher order corrections connects the dynamic scanner actuators with the angle resolved scatterometer via a separate application server. Improvements of CD uniformity are based on enabling the use of freeform intra-field dose actuator and field-to-field control of focus. The feedback control loop uses CD and focus targets placed on the production mask. For the overlay metrology we use small in-die diffraction based overlay targets. Improvements of overlay are based on using the high order intra-field correction actuators on a field-tofield basis. We use this to reduce the machine matching error, extending the heating control and extending the correction capability for process induced errors.

Recovery from Object Substitution Masking Induced by Transient Suppression of Visual Motion Processing: A Repetitive Transcranial Magnetic Stimulation Study

ERIC Educational Resources Information Center

Hirose, Nobuyuki; Kihara, Ken; Mima, Tatsuya; Ueki, Yoshino; Fukuyama, Hidenao; Osaka, Naoyuki

2007-01-01

Object substitution masking is a form of visual backward masking in which a briefly presented target is rendered invisible by a lingering mask that is too sparse to produce lower image-level interference. Recent studies suggested the importance of an updating process in a higher object-level representation, which should rely on the processing of…

Effect of SPM-based cleaning POR on EUV mask performance

NASA Astrophysics Data System (ADS)

Choi, Jaehyuck; Lee, Han-shin; Yoon, Jinsang; Shimomura, Takeya; Friz, Alex; Montgomery, Cecilia; Ma, Andy; Goodwin, Frank; Kang, Daehyuk; Chung, Paul; Shin, Inkyun; Cho, H.

2011-11-01

EUV masks include many different layers of various materials rarely used in optical masks, and each layer of material has a particular role in enhancing the performance of EUV lithography. Therefore, it is crucial to understand how the mask quality and patterning performance can change during mask fabrication, EUV exposure, maintenance cleaning, shipping, or storage. The fact that a pellicle is not used to protect the mask surface in EUV lithography suggests that EUV masks may have to undergo more cleaning cycles during their lifetime. More frequent cleaning, combined with the adoption of new materials for EUV masks, necessitates that mask manufacturers closely examine the performance change of EUV masks during cleaning process. We have investigated EUV mask quality and patterning performance during 30 cycles of Samsung's EUV mask SPM-based cleaning and 20 cycles of SEMATECH ADT exposure. We have observed that the quality and patterning performance of EUV masks does not significantly change during these processes except mask pattern CD change. To resolve this issue, we have developed an acid-free cleaning POR and substantially improved EUV mask film loss compared to the SPM-based cleaning POR.

EUV mask manufacturing readiness in the merchant mask industry

NASA Astrophysics Data System (ADS)

Green, Michael; Choi, Yohan; Ham, Young; Kamberian, Henry; Progler, Chris; Tseng, Shih-En; Chiou, Tsann-Bim; Miyazaki, Junji; Lammers, Ad; Chen, Alek

2017-10-01

As nodes progress into the 7nm and below regime, extreme ultraviolet lithography (EUVL) becomes critical for all industry participants interested in remaining at the leading edge. One key cost driver for EUV in the supply chain is the reflective EUV mask. As of today, the relatively few end users of EUV consist primarily of integrated device manufactures (IDMs) and foundries that have internal (captive) mask manufacturing capability. At the same time, strong and early participation in EUV by the merchant mask industry should bring value to these chip makers, aiding the wide-scale adoption of EUV in the future. For this, merchants need access to high quality, representative test vehicles to develop and validate their own processes. This business circumstance provides the motivation for merchants to form Joint Development Partnerships (JDPs) with IDMs, foundries, Original Equipment Manufacturers (OEMs) and other members of the EUV supplier ecosystem that leverage complementary strengths. In this paper, we will show how, through a collaborative supplier JDP model between a merchant and OEM, a novel, test chip driven strategy is applied to guide and validate mask level process development. We demonstrate how an EUV test vehicle (TV) is generated for mask process characterization in advance of receiving chip maker-specific designs. We utilize the TV to carry out mask process "stress testing" to define process boundary conditions which can be used to create Mask Rule Check (MRC) rules as well as serve as baseline conditions for future process improvement. We utilize Advanced Mask Characterization (AMC) techniques to understand process capability on designs of varying complexity that include EUV OPC models with and without sub-resolution assist features (SRAFs). Through these collaborations, we demonstrate ways to develop EUV processes and reduce implementation risks for eventual mass production. By reducing these risks, we hope to expand access to EUV mask capability for the broadest community possible as the technology is implemented first within and then beyond the initial early adopters.

KAZRCORMD

DOE Data Explorer

Johnson, Karen; Toto, Tami; Jensen, Michael

2011-05-03

For the Ka ARM Zenith Radar (KAZR) data stream, kazrmd.b1 (md=moderate sensitivity), produces significant detection mask, corrects reflectivity for gaseous attenuation, and dealiases mean Doppler velocity.

KAZRCORHI

DOE Data Explorer

Johnson, Karen; Toto, Tami; Jensen, Michael

2011-01-18

For the Ka ARM Zenith Radar (KAZR) data stream, kazrhi.b1 (hi=high sensitivity), produces significant detection mask, corrects reflectivity for gaseous attenuation, and dealiases mean Doppler velocity.

KAZRCORGE

DOE Data Explorer

Johnson, Karen; Toto, Tami; Jensen, Michael

2011-01-18

For the Ka ARM Zenith Radar (KAZR) data stream, kazrge.b1 (ge=general sensitivity), produces significant detection mask, corrects reflectivity for gaseous attenuation, and dealiases mean Doppler velocity.

EUVL masks: paving the path for commercialization

NASA Astrophysics Data System (ADS)

Mangat, Pawitter J. S.; Hector, Scott D.

2001-09-01

Optical projection lithography has been the principal vehicle of semiconductor manufacturing for more than 20 years and is marching aggressively to satisfy the needs of semiconductor manufacturers for 100nm devices. However, the complexity of optical lithography continues to increase as wavelength reduction continues to 157nm. Extreme Ultraviolet Lithography (EUVL), with wavelength from 13-14 nm, is evolving as a leading next generation lithography option for semiconductor industry to stay on the path laid by Moore's Law. Masks are a critical part of the success of any technology and are considered to be high risk both for optical lithography and NGL technologies for sub-100nm lithography. Two key areas of EUV mask fabrication are reflective multilayer deposition and absorber patterning. In the case of reflective multilayers, delivering defect free multilayers for mask blanks is the biggest challenge. Defect mitigation is being explored as a possible option to smooth the multilayer defects in addition to optimization of the deposition process to reduce defect density. The mask patterning process needs focus on the defect-free absorber stack patterning process, mask cleaning, inspection and repair. In addition, there is considerable effort to understand by simulations, the defect printability, thermal and mechanical distortions, and non-telecentric illumination, to mention a few. To protect the finished mask from defects added during use, a removable pellicle strategy combined with thermophoretic protection during exposure is being developed. Recent migration to square form factor using low thermal expansion material (LTEM) is advantageous as historical developments in optical masks can be applied to EUV mask patterning. This paper addresses recent developments in the EUV mask patterning and highlights critical manufacturing process controls needed to fabricate defect-free full field masks with CD and image placement specifications for sub-70nm node lithography. No technology can be implemented without establishing the commercial infrastructure. The rising cost seems to be a major issue affecting the technology development. With respect to mask fabrication for commercial availability, a virtual mask shop analysis is presented that indicates that the process cost for EUVL masks are comparable to the high end optical mask with a reasonable yield. However, the cost for setting up a new mask facility is considerably high.

Mechanical microencapsulation: The best technique in taste masking for the manufacturing scale - Effect of polymer encapsulation on drug targeting.

PubMed

Al-Kasmi, Basheer; Alsirawan, Mhd Bashir; Bashimam, Mais; El-Zein, Hind

2017-08-28

Drug taste masking is a crucial process for the preparation of pediatric and geriatric formulations as well as fast dissolving tablets. Taste masking techniques aim to prevent drug release in saliva and at the same time to obtain the desired release profile in gastrointestinal tract. Several taste masking methods are reported, however this review has focused on a group of promising methods; complexation, encapsulation, and hot melting. The effects of each method on the physicochemical properties of the drug are described in details. Furthermore, a scoring system was established to evaluate each process using recent published data of selected factors. These include, input, process, and output factors that are related to each taste masking method. Input factors include the attributes of the materials used for taste masking. Process factors include equipment type and process parameters. Finally, output factors, include taste masking quality and yield. As a result, Mechanical microencapsulation obtained the highest score (5/8) along with complexation with cyclodextrin suggesting that these methods are the most preferable for drug taste masking. Copyright © 2017 Elsevier B.V. All rights reserved.

Quantitative evaluation of manufacturability and performance for ILT produced mask shapes using a single-objective function

NASA Astrophysics Data System (ADS)

Choi, Heon; Wang, Wei-long; Kallingal, Chidam

2015-03-01

The continuous scaling of semiconductor devices is quickly outpacing the resolution improvements of lithographic exposure tools and processes. This one-sided progression has pushed optical lithography to its limits, resulting in the use of well-known techniques such as Sub-Resolution Assist Features (SRAF's), Source-Mask Optimization (SMO), and double-patterning, to name a few. These techniques, belonging to a larger category of Resolution Enhancement Techniques (RET), have extended the resolution capabilities of optical lithography at the cost of increasing mask complexity, and therefore cost. One such technique, called Inverse Lithography Technique (ILT), has attracted much attention for its ability to produce the best possible theoretical mask design. ILT treats the mask design process as an inverse problem, where the known transformation from mask to wafer is carried out backwards using a rigorous mathematical approach. One practical problem in the application of ILT is the resulting contour-like mask shapes that must be "Manhattanized" (composed of straight edges and 90-deg corners) in order to produce a manufacturable mask. This conversion process inherently degrades the mask quality as it is a departure from the "optimal mask" represented by the continuously curved shapes produced by ILT. However, simpler masks composed of longer straight edges reduce the mask cost as it lowers the shot count and saves mask writing time during mask fabrication, resulting in a conflict between manufacturability and performance for ILT produced masks1,2. In this study, various commonly used metrics will be combined into an objective function to produce a single number to quantitatively measure a particular ILT solution's ability to balance mask manufacturability and RET performance. Several metrics that relate to mask manufacturing costs (i.e. mask vertex count, ILT computation runtime) are appropriately weighted against metrics that represent RET capability (i.e. process-variation band, edge-placement-error) in order to reflect the desired practical balance. This well-defined scoring system allows direct comparison of several masks with varying degrees of complexities. Using this method, ILT masks produced with increasing mask constraints will be compared, and it will be demonstrated that using the smallest minimum width for mask shapes does not always produce the optimal solution.

EFFECT OF MASKED REGIONS ON WEAK-LENSING STATISTICS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shirasaki, Masato; Yoshida, Naoki; Hamana, Takashi, E-mail: masato.shirasaki@utap.phys.s.u-tokyo.ac.jp

2013-09-10

Sky masking is unavoidable in wide-field weak-lensing observations. We study how masks affect the measurement of statistics of matter distribution probed by weak gravitational lensing. We first use 1000 cosmological ray-tracing simulations to examine in detail the impact of masked regions on the weak-lensing Minkowski Functionals (MFs). We consider actual sky masks used for a Subaru Suprime-Cam imaging survey. The masks increase the variance of the convergence field and the expected values of the MFs are biased. The bias then compromises the non-Gaussian signals induced by the gravitational growth of structure. We then explore how masks affect cosmological parameter estimation.more » We calculate the cumulative signal-to-noise ratio (S/N) for masked maps to study the information content of lensing MFs. We show that the degradation of S/N for masked maps is mainly determined by the effective survey area. We also perform simple {chi}{sup 2} analysis to show the impact of lensing MF bias due to masked regions. Finally, we compare ray-tracing simulations with data from a Subaru 2 deg{sup 2} survey in order to address if the observed lensing MFs are consistent with those of the standard cosmology. The resulting {chi}{sup 2}/n{sub dof} = 29.6/30 for three combined MFs, obtained with the mask effects taken into account, suggests that the observational data are indeed consistent with the standard {Lambda}CDM model. We conclude that the lensing MFs are a powerful probe of cosmology only if mask effects are correctly taken into account.« less

Masking disrupts reentrant processing in human visual cortex.

PubMed

Fahrenfort, J J; Scholte, H S; Lamme, V A F

2007-09-01

In masking, a stimulus is rendered invisible through the presentation of a second stimulus shortly after the first. Over the years, authors have typically explained masking by postulating some early disruption process. In these feedforward-type explanations, the mask somehow "catches up" with the target stimulus, disrupting its processing either through lateral or interchannel inhibition. However, studies from recent years indicate that visual perception--and most notably visual awareness itself--may depend strongly on cortico-cortical feedback connections from higher to lower visual areas. This has led some researchers to propose that masking derives its effectiveness from selectively interrupting these reentrant processes. In this experiment, we used electroencephalogram measurements to determine what happens in the human visual cortex during detection of a texture-defined square under nonmasked (seen) and masked (unseen) conditions. Electro-encephalogram derivatives that are typically associated with reentrant processing turn out to be absent in the masked condition. Moreover, extrastriate visual areas are still activated early on by both seen and unseen stimuli, as shown by scalp surface Laplacian current source-density maps. This conclusively shows that feedforward processing is preserved, even when subject performance is at chance as determined by objective measures. From these results, we conclude that masking derives its effectiveness, at least partly, from disrupting reentrant processing, thereby interfering with the neural mechanisms of figure-ground segmentation and visual awareness itself.

MOEMs devices for future astronomical instrumentation in space

NASA Astrophysics Data System (ADS)

Zamkotsian, Frédéric; Liotard, Arnaud; Lanzoni, Patrick; ElHadi, Kacem; Waldis, Severin; Noell, Wilfried; de Rooij, Nico; Conedera, Veronique; Fabre, Norbert; Muratet, Sylvaine; Camon, Henri

2017-11-01

Based on the micro-electronics fabrication process, Micro-Opto-Electro-Mechanical Systems (MOEMS) are under study in order to be integrated in next-generation astronomical instruments for ground-based and space telescopes. Their main advantages are their compactness, scalability, specific task customization using elementary building blocks, and remote control. At Laboratoire d'Astrophysique de Marseille, we are engaged since several years in the design, realization and characterization of programmable slit masks for multi-object spectroscopy and micro-deformable mirrors for wavefront correction. First prototypes have been developed and show results matching with the requirements.

Hierarchical brain tissue segmentation and its application in multiple sclerosis and Alzheimer's disease

NASA Astrophysics Data System (ADS)

Lei, Tianhu; Udupa, Jayaram K.; Moonis, Gul; Schwartz, Eric; Balcer, Laura

2005-04-01

Based on Fuzzy Connectedness (FC) object delineation principles and algorithms, a hierarchical brain tissue segmentation technique has been developed for MR images. After MR image background intensity inhomogeneity correction and intensity standardization, three FC objects for cerebrospinal fluid (CSF), gray matter (GM), and white matter (WM) are generated via FC object delineation, and an intracranial (IC) mask is created via morphological operations. Then, the IC mask is decomposed into parenchymal (BP) and CSF masks, while the BP mask is separated into WM and GM masks. WM mask is further divided into pure and dirty white matter masks (PWM and DWM). In Multiple Sclerosis studies, a severe white matter lesion (LS) mask is defined from DWM mask. Based on the segmented brain tissue images, a histogram-based method has been developed to find disease-specific, image-based quantitative markers for characterizing the macromolecular manifestation of the two diseases. These same procedures have been applied to 65 MS (46 patients and 19 normal subjects) and 25 AD (15 patients and 10 normal subjects) data sets, each of which consists of FSE PD- and T2-weighted MR images. Histograms representing standardized PD and T2 intensity distributions and their numerical parameters provide an effective means for characterizing the two diseases. The procedures are systematic, nearly automated, robust, and the results are reproducible.

Atmospheric Phase Delay Correction of D-Insar Based on SENTINEL-1A

NASA Astrophysics Data System (ADS)

Li, X.; Huang, G.; Kong, Q.

2018-04-01

In this paper, we used the Generic Atmospheric Correction Online Service for InSAR (GACOS) tropospheric delay maps to correct the atmospheric phase delay of the differential interferometric synthetic aperture radar (D-InSAR) monitoring, and we improved the accuracy of subsidence monitoring using D-InSAR technology. Atmospheric phase delay, as one of the most important errors that limit the monitoring accuracy of InSAR, would lead to the masking of true phase in subsidence monitoring. For the problem, this paper used the Sentinel-1A images and the tropospheric delay maps got from GACOS to monitor the subsidence of the Yellow River Delta in Shandong Province. The conventional D-InSAR processing was performed using the GAMMA software. The MATLAB codes were used to correct the atmospheric delay of the D-InSAR results. The results before and after the atmospheric phase delay correction were verified and analyzed in the main subsidence area. The experimental results show that atmospheric phase influences the deformation results to a certain extent. After the correction, the measurement error of vertical deformation is reduced by about 18 mm, which proves that the removal of atmospheric effects can improve the accuracy of the D-InSAR monitoring.

Metacontrast masking is processed before grapheme-color synesthesia.

PubMed

Bacon, Michael Patrick; Bridgeman, Bruce; Ramachandran, Vilayanur S

2013-01-01

We investigated the physiological mechanism of grapheme-color synesthesia using metacontrast masking. A metacontrast target is rendered invisible by a mask that is delayed by about 60 ms; the target and mask do not overlap in space or time. Little masking occurs, however, if the target and mask are simultaneous. This effect must be cortical, because it can be obtained dichoptically. To compare the data for synesthetes and controls, we developed a metacontrast design in which nonsynesthete controls showed weaker dichromatic masking (i.e., the target and mask were in different colors) than monochromatic masking. We accomplished this with an equiluminant target, mask, and background for each observer. If synesthetic color affected metacontrast, synesthetes should show monochromatic masking more similar to the weak dichromatic masking among controls, because synesthetes could add their synesthetic color to the monochromatic condition. The target-mask pairs used for each synesthete were graphemes that elicited strong synesthetic colors. We found stronger monochromatic than dichromatic U-shaped metacontrast for both synesthetes and controls, with optimal masking at an asynchrony of 66 ms. The difference in performance between the monochromatic and dichromatic conditions in the synesthetes indicates that synesthesia occurs at a later processing stage than does metacontrast masking.

Mask cost of ownership for advanced lithography

NASA Astrophysics Data System (ADS)

Muzio, Edward G.; Seidel, Philip K.

2000-07-01

As technology advances, becoming more difficult and more expensive, the cost of ownership (CoO) metric becomes increasingly important in evaluating technical strategies. The International SEMATECH CoC analysis has steadily gained visibility over the past year, as it attempts to level the playing field between technology choices, and create a fair relative comparison. In order to predict mask cots for advanced lithography, mask process flows are modeled using bets-known processing strategies, equipment cost, and yields. Using a newly revised yield mode, and updated mask manufacture flows, representative mask flows can be built. These flows are then used to calculate mask costs for advanced lithography down to the 50 nm node. It is never the goal of this type of work to provide absolute cost estimates for business planning purposes. However, the combination of a quantifiable yield model with a clearly defined set of mask processing flows and a cost model based upon them serves as an excellent starting point for cost driver analysis and process flow discussion.

Cost-effective masks for deep x-ray lithography

NASA Astrophysics Data System (ADS)

Scheunemann, Heinz-Ulrich; Loechel, Bernd; Jian, Linke; Schondelmaier, Daniel; Desta, Yohannes M.; Goettert, Jost

2003-04-01

The production of X-ray masks is one of the key techniques for X-ray lithography and the LIGA process. Different ways for the fabrication of X-ray masks has been established. Very sophisticated, difficult and expensive procedures are required to produce high precision and high quality X-ray masks. In order to minimize the cost of an X-ray mask, the mask blank must be inexpensive and readily available. The steps involved in the fabrication process must also be minimal. In the past, thin membranes made of titanium, silicon carbide, silicon nitride (2-5μm) or thick beryllium substrates (500μm) have been used as mask blanks. Thin titanium and silicon compounds have very high transparency for X-rays; therefore, these materials are predestined for use as mask membrane material. However, the handling and fabrication of thin membranes is very difficult, thus expensive. Beryllium is highly transparent to X-rays, but the processing and use of beryllium is risky due to potential toxicity. During the past few years graphite based X-ray masks have been in use at various research centers, but the sidewall quality of the generated resist patterns is in the range of 200-300 nm Ra. We used polished graphite to improve the sidewall roughness, but polished graphite causes other problems in the fabrication of X-ray masks. This paper describes the advantages associated with the use of polished graphite as mask blank as well as the fabrication process for this low cost X-ray mask. Alternative membrane materials will also be discussed.

Early Evaluation of the VIIRS Calibration, Cloud Mask and Surface Reflectance Earth Data Records

NASA Technical Reports Server (NTRS)

Vermote, Eric; Justice, Chris; Csiszar, Ivan

2014-01-01

Surface reflectance is one of the key products fromVIIRS and as withMODIS, is used in developing several higherorder land products. The VIIRS Surface Reflectance (SR) Intermediate Product (IP) is based on the heritageMODIS Collection 5 product (Vermote, El Saleous, & Justice, 2002). The quality and character of surface reflectance depend on the accuracy of the VIIRS Cloud Mask (VCM), the aerosol algorithms and the adequate calibration of the sensor. The focus of this paper is the early evaluation of the VIIRS SR product in the context of the maturity of the operational processing system, the Interface Data Processing System (IDPS). After a brief introduction, the paper presents the calibration performance and the role of the surface reflectance in calibration monitoring. The analysis of the performance of the cloud mask with a focus on vegetation monitoring (no snow conditions) shows typical problems over bright surfaces and high elevation sites. Also discussed is the performance of the aerosol input used in the atmospheric correction and in particular the artifacts generated by the use of the Navy Aerosol Analysis and Prediction System. Early quantitative results of the performance of the SR product over the AERONET sites showthatwith the fewadjustments recommended, the accuracy iswithin the threshold specifications. The analysis of the adequacy of the SR product (Land PEATE adjusted version) in applications of societal benefits is then presented. We conclude with a set of recommendations to ensure consistency and continuity of the JPSS mission with the MODIS Land Climate Data Record.

A comparison between over-the-head and lateral cardiopulmonary resuscitation with a single rescuer by bag-valve mask

PubMed Central

Nasiri, Ebrahim; Nasiri, Reza

2014-01-01

Context: mask fixation in the lateral position is difficult during CPR. Aim: the aim of this study is to compare the lateral CPR for the use of bag-valve mask by single paramedic rescuer as well as over-the-head CPR on the chest compression and ventilation on the manikin. Settings and Design: Mazandaran University of Medical Sciences. The design of this study was a randomized cross-over trial. Methods: participants learned a standardized theoretical introduction CPR according to the 2010 guidelines. The total number of chest compressions per two minutes was measured. Total number of correct and wrong ventilation per two minutes was evaluated. Statistical Analysis: we used Wilcoxon signed-rank test to analyze the non-normally distributed data in dependence groups A. P-value of more than 0.05 was considered to show statistical significance. Results: there were 100 participants (45 women and 55 men) who participated in the study from September to March, 2011. The compression and ventilation rate in lateral CPR was lower than OTH CPR. Around 51% of participants had correct chest compression rate more than 90 beats per minute in lateral CPR and 65% of them had equal or more than ten correct ventilations per minute. Conclusions: in conclusion, this study confirmed that in a simulated CPR model over-the-head position CPR led to a better BLS than the lateral position CPR by a single paramedic student with a BVM device. We also concluded that by this new BVM fixation method on the face of the patients in the lateral position CPR can be a good alternative over-the-head mask fixation by a single trained rescuer. PMID:24665237

Propagation of resist heating mask error to wafer level

NASA Astrophysics Data System (ADS)

Babin, S. V.; Karklin, Linard

2006-10-01

As technology is approaching 45 nm and below the IC industry is experiencing a severe product yield hit due to rapidly shrinking process windows and unavoidable manufacturing process variations. Current EDA tools are unable by their nature to deliver optimized and process-centered designs that call for 'post design' localized layout optimization DFM tools. To evaluate the impact of different manufacturing process variations on final product it is important to trace and evaluate all errors through design to manufacturing flow. Photo mask is one of the critical parts of this flow, and special attention should be paid to photo mask manufacturing process and especially to mask tight CD control. Electron beam lithography (EBL) is a major technique which is used for fabrication of high-end photo masks. During the writing process, resist heating is one of the sources for mask CD variations. Electron energy is released in the mask body mainly as heat, leading to significant temperature fluctuations in local areas. The temperature fluctuations cause changes in resist sensitivity, which in turn leads to CD variations. These CD variations depend on mask writing speed, order of exposure, pattern density and its distribution. Recent measurements revealed up to 45 nm CD variation on the mask when using ZEP resist. The resist heating problem with CAR resists is significantly smaller compared to other types of resists. This is partially due to higher resist sensitivity and the lower exposure dose required. However, there is no data yet showing CD errors on the wafer induced by CAR resist heating on the mask. This effect can be amplified by high MEEF values and should be carefully evaluated at 45nm and below technology nodes where tight CD control is required. In this paper, we simulated CD variation on the mask due to resist heating; then a mask pattern with the heating error was transferred onto the wafer. So, a CD error on the wafer was evaluated subject to only one term of the mask error budget - the resist heating CD error. In simulation of exposure using a stepper, variable MEEF was considered.

Applications of CPL mask technology for sub-65nm gate imaging

NASA Astrophysics Data System (ADS)

Litt, Lloyd C.; Conley, Will; Wu, Wei; Peters, Richie; Parker, Colita; Cobb, Jonathan; Kasprowicz, Bryan S.; van den Broeke, Doug; Park, J. C.; Karur-Shanmugam, Ramkumar

2005-05-01

The requirements for critical dimension control on gate layer for high performance products are increasingly demanding. Phase shift techniques provide aerial image enhancement, which can translate into improved process window performance and greater critical dimension (CD) control if properly applied. Unfortunately, the application of hard shifter technology to production requires significant effort in layout and optical proximity correction (OPC) application. Chromeless Phase Lithography (CPL) has several advantages over complementary phase mask (c:PSM) such as use of a single mask, and lack of phase placement 'coloring' conflicts and phase imbalance issues. CPL does have implementation issues that must be resolved before it can be used in full-scale production. CPL mask designs can be approached by separating features into three zones based on several parameters, including size relative to the lithographic resolution of the stepper lens, wavelength, and illumination conditions defined. Features are placed into buckets for different treatment zones. Zone 1 features are constructed with 100% transmission phase shifted structures and Zone 3 features are chrome (binary) structures. Features that fall into Zone 2, which are too wide to be defined using the 100% transmission of pure CPL (i.e. have negative mask error factor, MEEF) are the most troublesome and can be approached in several ways. The authors have investigated the application of zebra structures of various sizes to product type layouts. Previous work to investigate CPL using test structures set the groundwork for the more difficult task of applying CPL rules to actual random logic design layouts, which include many zone transitions. Mask making limitations have been identified that play a role in the zebra sizing that can be applied to Zone 2 features. The elimination of Zone 2 regions was also investigated in an effort to simplify the application of CPL and improve manufacturability of reticle through data enhancements.

Optical image cryptosystem using chaotic phase-amplitude masks encoding and least-data-driven decryption by compressive sensing

NASA Astrophysics Data System (ADS)

Lang, Jun; Zhang, Jing

2015-03-01

In our proposed optical image cryptosystem, two pairs of phase-amplitude masks are generated from the chaotic web map for image encryption in the 4f double random phase-amplitude encoding (DRPAE) system. Instead of transmitting the real keys and the enormous masks codes, only a few observed measurements intermittently chosen from the masks are delivered. Based on compressive sensing paradigm, we suitably refine the series expansions of web map equations to better reconstruct the underlying system. The parameters of the chaotic equations can be successfully calculated from observed measurements and then can be used to regenerate the correct random phase-amplitude masks for decrypting the encoded information. Numerical simulations have been performed to verify the proposed optical image cryptosystem. This cryptosystem can provide a new key management and distribution method. It has the advantages of sufficiently low occupation of the transmitted key codes and security improvement of information transmission without sending the real keys.

Robust resolution enhancement optimization methods to process variations based on vector imaging model

NASA Astrophysics Data System (ADS)

Ma, Xu; Li, Yanqiu; Guo, Xuejia; Dong, Lisong

2012-03-01

Optical proximity correction (OPC) and phase shifting mask (PSM) are the most widely used resolution enhancement techniques (RET) in the semiconductor industry. Recently, a set of OPC and PSM optimization algorithms have been developed to solve for the inverse lithography problem, which are only designed for the nominal imaging parameters without giving sufficient attention to the process variations due to the aberrations, defocus and dose variation. However, the effects of process variations existing in the practical optical lithography systems become more pronounced as the critical dimension (CD) continuously shrinks. On the other hand, the lithography systems with larger NA (NA>0.6) are now extensively used, rendering the scalar imaging models inadequate to describe the vector nature of the electromagnetic field in the current optical lithography systems. In order to tackle the above problems, this paper focuses on developing robust gradient-based OPC and PSM optimization algorithms to the process variations under a vector imaging model. To achieve this goal, an integrative and analytic vector imaging model is applied to formulate the optimization problem, where the effects of process variations are explicitly incorporated in the optimization framework. The steepest descent algorithm is used to optimize the mask iteratively. In order to improve the efficiency of the proposed algorithms, a set of algorithm acceleration techniques (AAT) are exploited during the optimization procedure.

Performance of advanced resuscitation skills by pediatric housestaff.

PubMed

White, J R; Shugerman, R; Brownlee, C; Quan, L

1998-12-01

To describe pediatric housestaff resuscitation experience and their ability to perform key resuscitation skills. Cohort study of 63 pediatric residents in a university-based training program. Investigators observed, scored, and timed resident performance on 4 key resuscitation skills. Cognitive ability was tested with 4 written scenarios. Housestaff provided self-reports of the number of months since their last American Heart Association Pediatric Advanced Life Support course, number of mock and actual codes attended, number of times skills were performed, and self-confidence with respect to resuscitation. A total of 45 pediatric residents (71%) participated. Median cognitive score was 5 (range, 1-5). Of all residents, 44 (97%) successfully bag mask-ventilated the mannequin; 24 (53%) and 36 (80%) used the correct bag and mask size, respectively. Thirty-nine residents (87%) placed a tube in the mannequin trachea, 12 (27%) checked that suction was working prior to intubation, and 30 (67%) chose the correct endotracheal tube size. Forty residents (89%) discharged the defibrillator, and 25 (56%) and 32 (71%) correctly chose asynchronous mode and infant paddles, respectively. Thirty-eight residents (84%) inserted an intraosseous line; 35 (78%) had correct placement. Median times for successful skill completion were 83 seconds for bag mask ventilation, 136 seconds for intubation, 149 seconds for defibrillation, and 68 seconds for intraosseous line placement. Pediatric housestaff previously trained in pediatric advanced life support were generally able to reach the end point of 4 key resuscitation skills but less frequently performed the specific subcomponents of each skill. This poor performance and the prolonged time to skill completion suggest the need for greater attention to detail during training.

Topographic Correction Module at Storm (TC@Storm)

NASA Astrophysics Data System (ADS)

Zaksek, K.; Cotar, K.; Veljanovski, T.; Pehani, P.; Ostir, K.

2015-04-01

Different solar position in combination with terrain slope and aspect result in different illumination of inclined surfaces. Therefore, the retrieved satellite data cannot be accurately transformed to the spectral reflectance, which depends only on the land cover. The topographic correction should remove this effect and enable further automatic processing of higher level products. The topographic correction TC@STORM was developed as a module within the SPACE-SI automatic near-real-time image processing chain STORM. It combines physical approach with the standard Minnaert method. The total irradiance is modelled as a three-component irradiance: direct (dependent on incidence angle, sun zenith angle and slope), diffuse from the sky (dependent mainly on sky-view factor), and diffuse reflected from the terrain (dependent on sky-view factor and albedo). For computation of diffuse irradiation from the sky we assume an anisotropic brightness of the sky. We iteratively estimate a linear combination from 10 different models, to provide the best results. Dependent on the data resolution, we mask shades based on radiometric (image) or geometric properties. The method was tested on RapidEye, Landsat 8, and PROBA-V data. Final results of the correction were evaluated and statistically validated based on various topography settings and land cover classes. Images show great improvements in shaded areas.

The difficult business model for mask equipment makers and mask infrastructure development support from consortia and governments

NASA Astrophysics Data System (ADS)

Hector, Scott

2005-11-01

The extension of optical projection lithography through immersion to patterning features with half pitch <=65 nm is placing greater demands on the mask. Strong resolution enhancement techniques (RETs), such as embedded and alternating phase shift masks and complex model-based optical proximity correction, are required to compensate for diffraction and limited depth of focus (DOF). To fabricate these masks, many new or upgraded tools are required to write patterns, measure feature sizes and placement, inspect for defects, review defect printability and repair defects on these masks. Beyond the significant technical challenges, suppliers of mask fabrication equipment face the challenge of being profitable in the small market for mask equipment while encountering significant R&D expenses to bring new generations of mask fabrication equipment to market. The total available market for patterned masks is estimated to be $2.5B to $2.9B per year. The patterned mask market is about 20% of the market size for lithography equipment and materials. The total available market for mask-making equipment is estimated to be about $800M per year. The largest R&D affordability issue arises for the makers of equipment for fabricating masks where total available sales are typically less than ten units per year. SEMATECH has used discounted cash flow models to predict the affordable R&D while maintaining industry accepted internal rates of return. The results have been compared to estimates of the total R&D cost to bring a new generation of mask equipment to market for various types of tools. The analysis revealed that affordability of the required R&D is a significant problem for many suppliers of mask-making equipment. Consortia such as SEMATECH and Selete have played an important role in cost sharing selected mask equipment and material development projects. Governments in the United States, in Europe and in Japan have also helped equipment suppliers with support for R&D. This paper summarizes the challenging business model for mask equipment suppliers and highlight government support for mask equipment and materials development.

Robust Surface Reconstruction via Laplace-Beltrami Eigen-Projection and Boundary Deformation

PubMed Central

Shi, Yonggang; Lai, Rongjie; Morra, Jonathan H.; Dinov, Ivo; Thompson, Paul M.; Toga, Arthur W.

2010-01-01

In medical shape analysis, a critical problem is reconstructing a smooth surface of correct topology from a binary mask that typically has spurious features due to segmentation artifacts. The challenge is the robust removal of these outliers without affecting the accuracy of other parts of the boundary. In this paper, we propose a novel approach for this problem based on the Laplace-Beltrami (LB) eigen-projection and properly designed boundary deformations. Using the metric distortion during the LB eigen-projection, our method automatically detects the location of outliers and feeds this information to a well-composed and topology-preserving deformation. By iterating between these two steps of outlier detection and boundary deformation, we can robustly filter out the outliers without moving the smooth part of the boundary. The final surface is the eigen-projection of the filtered mask boundary that has the correct topology, desired accuracy and smoothness. In our experiments, we illustrate the robustness of our method on different input masks of the same structure, and compare with the popular SPHARM tool and the topology preserving level set method to show that our method can reconstruct accurate surface representations without introducing artificial oscillations. We also successfully validate our method on a large data set of more than 900 hippocampal masks and demonstrate that the reconstructed surfaces retain volume information accurately. PMID:20624704

Object Substitution Masking Induced by Illusory Masks: Evidence for Higher Object-Level Locus of Interference

ERIC Educational Resources Information Center

Hirose, Nobuyuki; Osaka, Naoyuki

2009-01-01

A briefly presented target can be rendered invisible by a lingering sparse mask that does not even touch it. This form of visual backward masking, called object substitution masking, is thought to occur at the object level of processing. However, it remains unclear whether object-level interference alone produces substitution masking because…

Interactions between concentric form-from-structure and face perception revealed by visual masking but not adaptation

PubMed Central

Feczko, Eric; Shulman, Gordon L.; Petersen, Steven E.; Pruett, John R.

2014-01-01

Findings from diverse subfields of vision research suggest a potential link between high-level aspects of face perception and concentric form-from-structure perception. To explore this relationship, typical adults performed two adaptation experiments and two masking experiments to test whether concentric, but not nonconcentric, Glass patterns (a type of form-from-structure stimulus) utilize a processing mechanism shared by face perception. For the adaptation experiments, subjects were presented with an adaptor for 5 or 20 s, prior to discriminating a target. In the masking experiments, subjects saw a mask, then a target, and then a second mask. Measures of discriminability and bias were derived and repeated measures analysis of variance tested for pattern-specific masking and adaptation effects. Results from Experiment 1 show no Glass pattern-specific effect of adaptation to faces; results from Experiment 2 show concentric Glass pattern masking, but not adaptation, may impair upright/inverted face discrimination; results from Experiment 3 show concentric and radial Glass pattern masking impaired subsequent upright/inverted face discrimination more than translational Glass pattern masking; and results from Experiment 4 show concentric and radial Glass pattern masking impaired subsequent face gender discrimination more than translational Glass pattern masking. Taken together, these findings demonstrate interactions between concentric form-from-structure and face processing, suggesting a possible common processing pathway. PMID:24563526

Z-correction, a method for achieving ultraprecise self-calibration on large area coordinate measurement machines for photomasks

NASA Astrophysics Data System (ADS)

Ekberg, Peter; Stiblert, Lars; Mattsson, Lars

2014-05-01

High-quality photomasks are a prerequisite for the production of flat panel TVs, tablets and other kinds of high-resolution displays. During the past years, the resolution demand has become more and more accelerated, and today, the high-definition standard HD, 1920 × 1080 pixels2, is well established, and already the next-generation so-called ultra-high-definition UHD or 4K display is entering the market. Highly advanced mask writers are used to produce the photomasks needed for the production of such displays. The dimensional tolerance in X and Y on absolute pattern placement on these photomasks, with sizes of square meters, has been in the range of 200-300 nm (3σ), but is now on the way to be <150 nm (3σ). To verify these photomasks, 2D ultra-precision coordinate measurement machines are used with even tighter tolerance requirements. The metrology tool MMS15000 is today the world standard tool used for the verification of large area photomasks. This paper will present a method called Z-correction that has been developed for the purpose of improving the absolute X, Y placement accuracy of features on the photomask in the writing process. However, Z-correction is also a prerequisite for achieving X and Y uncertainty levels <90 nm (3σ) in the self-calibration process of the MMS15000 stage area of 1.4 × 1.5 m2. When talking of uncertainty specifications below 200 nm (3σ) of such a large area, the calibration object used, here an 8-16 mm thick quartz plate of size approximately a square meter, cannot be treated as a rigid body. The reason for this is that the absolute shape of the plate will be affected by gravity and will therefore not be the same at different places on the measurement machine stage when it is used in the self-calibration process. This mechanical deformation will stretch or compress the top surface (i.e. the image side) of the plate where the pattern resides, and therefore spatially deform the mask pattern in the X- and Y-directions. Errors due to this deformation can easily be several hundred nanometers. When Z-correction is used in the writer, it is also possible to relax the flatness demand of the photomask backside, leading to reduced manufacturing costs of the plates.

Astronomical Near-neighbor Detection with a Four-quadrant Phase Mask (FQPM) Coronagraph

NASA Technical Reports Server (NTRS)

Haguenauer, Pierre; Serabyn, Eugene; Mennesson, Bertrand; Wallace, James K.; Gappinger, Robert O.; Troy, Mitchell; Bloemhof, Eric E.; Moore, Jim; Koresko, Chris D.

2006-01-01

Direct detection of planets around nearby stars requires the development of high-contrast imaging techniques, because of their very different respective fluxes. We thus investigated the innovative coronagraphic approach based on the use of a four-quadrant phase mask (FQPM). Simulations showed that, combined with high-level wavefront correction on an unobscured off-axis section of a large telescope, this method allows high-contrast imaging very close to stars, with detection capability superior to that of a traditional coronagraph. A FQPM instrument was thus built to test the feasibility of near-neighbor observations with our new off-axis approach on a ground-based telescope. In June 2005, we deployed our instrument to the Palomar 200-inch telescope, using existing facilities as much as possible for rapid implementation. In these initial observations, using data processing techniques specific to FQPM coronagraphs, we reached extinction levels of the order of 200:1. Here we discuss our simulations and on-sky results obtained so far.

Conceptual Masking: How One Picture Captures Attention from Another Picture.

ERIC Educational Resources Information Center

Loftus, Geoffrey R.; And Others

1988-01-01

Five experiments studied operations of conceptual masking--the reduction of conceptual memory performance for an initial stimulus when it is followed by a masking picture process. The subjects were 337 undergraduates at the University of Washington (Seattle). Conceptual masking is distinguished from perceptual masking. (TJH)

OPC and PSM design using inverse lithography: a nonlinear optimization approach

NASA Astrophysics Data System (ADS)

Poonawala, Amyn; Milanfar, Peyman

2006-03-01

We propose a novel method for the fast synthesis of low complexity model-based optical proximity correction (OPC) and phase shift masks (PSM) to improve the resolution and pattern fidelity of optical microlithography. We use the pixel-based mask representation, a continuous function formulation, and gradient based iterative optimization techniques to solve the above inverse problem. The continuous function formulation allows analytic calculation of the gradient. Pixel-based parametrization provides tremendous liberty in terms of the features possible in the synthesized masks, but also suffers the inherent disadvantage that the masks are very complex and difficult to manufacture. We therefore introduce the regularization framework; a useful tool which provides the flexibility to promote certain desirable properties in the solution. We employ the above framework to ensure that the estimated masks have only two or three (allowable) transmission values and are also comparatively simple and easy to manufacture. The results demonstrate that we are able to bring the CD on target using OPC masks. Furthermore, we were also able to boost the contrast of the aerial image using attenuated, strong, and 100% transmission phase shift masks. Our algorithm automatically (and optimally) adds assist-bars, dog-ears, serifs, anti-serifs, and other custom structures best suited for printing the desired pattern.

Identification of optimal mask size parameter for noise filtering in 99mTc-methylene diphosphonate bone scintigraphy images.

PubMed

Pandey, Anil K; Bisht, Chandan S; Sharma, Param D; ArunRaj, Sreedharan Thankarajan; Taywade, Sameer; Patel, Chetan; Bal, Chandrashekhar; Kumar, Rakesh

2017-11-01

Tc-methylene diphosphonate (Tc-MDP) bone scintigraphy images have limited number of counts per pixel. A noise filtering method based on local statistics of the image produces better results than a linear filter. However, the mask size has a significant effect on image quality. In this study, we have identified the optimal mask size that yields a good smooth bone scan image. Forty four bone scan images were processed using mask sizes 3, 5, 7, 9, 11, 13, and 15 pixels. The input and processed images were reviewed in two steps. In the first step, the images were inspected and the mask sizes that produced images with significant loss of clinical details in comparison with the input image were excluded. In the second step, the image quality of the 40 sets of images (each set had input image, and its corresponding three processed images with 3, 5, and 7-pixel masks) was assessed by two nuclear medicine physicians. They selected one good smooth image from each set of images. The image quality was also assessed quantitatively with a line profile. Fisher's exact test was used to find statistically significant differences in image quality processed with 5 and 7-pixel mask at a 5% cut-off. A statistically significant difference was found between the image quality processed with 5 and 7-pixel mask at P=0.00528. The identified optimal mask size to produce a good smooth image was found to be 7 pixels. The best mask size for the John-Sen Lee filter was found to be 7×7 pixels, which yielded Tc-methylene diphosphonate bone scan images with the highest acceptable smoothness.

Data sharing system for lithography APC

NASA Astrophysics Data System (ADS)

Kawamura, Eiichi; Teranishi, Yoshiharu; Shimabara, Masanori

2007-03-01

We have developed a simple and cost-effective data sharing system between fabs for lithography advanced process control (APC). Lithography APC requires process flow, inter-layer information, history information, mask information and so on. So, inter-APC data sharing system has become necessary when lots are to be processed in multiple fabs (usually two fabs). The development cost and maintenance cost also have to be taken into account. The system handles minimum information necessary to make trend prediction for the lots. Three types of data have to be shared for precise trend prediction. First one is device information of the lots, e.g., process flow of the device and inter-layer information. Second one is mask information from mask suppliers, e.g., pattern characteristics and pattern widths. Last one is history data of the lots. Device information is electronic file and easy to handle. The electronic file is common between APCs and uploaded into the database. As for mask information sharing, mask information described in common format is obtained via Wide Area Network (WAN) from mask-vender will be stored in the mask-information data server. This information is periodically transferred to one specific lithography-APC server and compiled into the database. This lithography-APC server periodically delivers the mask-information to every other lithography-APC server. Process-history data sharing system mainly consists of function of delivering process-history data. In shipping production lots to another fab, the product-related process-history data is delivered by the lithography-APC server from the shipping site. We have confirmed the function and effectiveness of data sharing systems.

Design architecture of double spiral interdigitated electrode with back gate electrode for biosensor application

NASA Astrophysics Data System (ADS)

Fathil, M. F. M.; Arshad, M. K. Md.; Hashim, U.; Ruslinda, A. R.; Gopinath, Subash C. B.; M. Nuzaihan M., N.; Ayub, R. M.; Adzhri, R.; Zaki, M.; Azman, A. H.

2016-07-01

This paper presents the preparation method of photolithography chrome mask design used in fabrication process of double spiral interdigitated electrode with back gate biasing based biosensor. By learning the fabrication process flow of the biosensor, the chrome masks are designed through drawing using the AutoCAD software. The overall width and length of the device is optimized at 7.0 mm and 10.0 mm, respectively. Fabrication processes of the biosensor required three chrome masks, which included back gate opening, spiral IDE formation, and passivation area formation. The complete chrome masks design will be sent for chrome mask fabrication and for future use in biosensor fabrication.

Reentrant processing mediates object substitution masking: comment on Põder (2013).

PubMed

Di Lollo, Vincent

2014-01-01

Object-substitution masking (OSM) occurs when a target stimulus and a surrounding mask are displayed briefly together, and the display then continues with the mask alone. Target identification is accurate when the stimuli co-terminate but is progressively impaired as the duration of the trailing mask is increased. In reentrant accounts, OSM is said to arise from iterative exchanges between brain regions connected by two-way pathways. In an alternative account, OSM is explained on the basis of exclusively feed-forward processes, without recourse to reentry. Here I show that the feed-forward account runs afoul of the extant phenomenological, behavioral, brain-imaging, and electrophysiological evidence. Further, the feed-forward assumption that masking occurs when attention finds a degraded target is shown to be entirely ad hoc. In contrast, the evidence is uniformly consistent with a reentrant-processing account of OSM.

Inexpensive Masks for Film Deposition

NASA Technical Reports Server (NTRS)

Conley, W. R.

1986-01-01

Sputtered sprayed lines less than 2 millimeters wide made by superimposing masks with partially overlapping openings. Slits first cut in masks by stamping or other economical process. Masks superimposed so slits define new openings narrower than original slits.

The role of lines and corners of geometric figures in recognition performance.

PubMed

Shevelev, Igor A; Kamenkovich, Viktorina M; Sharaev, George A

2003-01-01

A relative role of lines and corners of images of outline geometric figures in recognition performance was studied psychophysically. Probability of correct response to the shape of the whole figure (control) and figures with lines or corners masked to a different extent was compared. Increase in the extent of masking resulted in a drop of recognition performance that was significantly lower for figures without corners, than for figures without part of their lines. The whole 3D figures were recognized better than 2D ones, whereas the opposite relations were observed under conditions of masking. Significant gender difference in a recognition performance was found: men recognize entire and partly masked figures better than women. Possible mechanisms of relatively better recognition of figures with corners than with lines are discussed in connection with finding of high sensitivity of many neurons in the primary visual cortex to line crossing and branching.

"The Mask Who Wasn't There": Visual Masking Effect with the Perceptual Absence of the Mask

ERIC Educational Resources Information Center

Rey, Amandine Eve; Riou, Benoit; Muller, Dominique; Dabic, Stéphanie; Versace, Rémy

2015-01-01

Does a visual mask need to be perceptually present to disrupt processing? In the present research, we proposed to explore the link between perceptual and memory mechanisms by demonstrating that a typical sensory phenomenon (visual masking) can be replicated at a memory level. Experiment 1 highlighted an interference effect of a visual mask on the…

Assessment of molecular contamination in mask pod

NASA Astrophysics Data System (ADS)

Foray, Jean Marie; Dejaune, Patrice; Sergent, Pierre; Gough, Stuart; Cheung, D.; Davenet, Magali; Favre, Arnaud; Rude, C.; Trautmann, T.; Tissier, Michel; Fontaine, H.; Veillerot, M.; Avary, K.; Hollein, I.; Lerit, R.

2008-04-01

Context/ study Motivation: Contamination and especially Airbone Molecular Contamination (AMC) is a critical issue for mask material flow with a severe and fairly unpredictable risk of induced contamination and damages especially for 193 nm lithography. It is therefore essential to measure, to understand and then try to reduce AMC in mask environment. Mask material flow was studied in a global approach by a pool of European partners, especially within the frame of European MEDEA+ project, so called "MUSCLE". This paper deals with results and assessment of mask pod environment in term of molecular contamination in a first step, then in a second step preliminary studies to reduce mask pod influence and contamination due to material out gassing. Approach and techniques: A specific assessment of environmental / molecular contamination along the supply chain was performed by all partners. After previous work presented at EMLC 07, further studies were performed on real time contamination measurement pod at different sites locations (including Mask manufacturing site, blank manufacturing sites, IC fab). Studies were linked to the main critical issues: cleaning, storage, handling, materials and processes. Contamination measurement campaigns were carried out along the mask supply chain using specific Adixen analyzer in order to monitor in real time organic contaminants (ppb level) in mask pods. Key results would be presented: VOC, AMC and humidity level on different kinds of mask carriers, impact of basic cleaning on pod outgassing measurement (VOC, NH3), and process influence on pod contamination... In a second step, preliminary specific pod conditioning studies for better pod environment were performed based on Adixen vacuum process. Process influence had been experimentally measured in term of molecular outgassing from mask pods. Different AMC experimental characterization methods had been carried out leading to results on a wide range of organic and inorganic contaminants: by inline techniques based on Adixen humidity, also VOC and organic sensors, together by off-line techniques already used in the extensive previous mask pods benchmark (TD-GCMS & Ionic Chromatography). Humidity and VOC levels from mask carriers had shown significant reduction after Adixen pod conditioning process. Focus had been made on optimized vacuum step (for AMC) after particles carrier cleaning cycle. Based upon these key results new procedures, as well as guidelines for mask carrier cleaning optimization are proposed to improve pod contamination control. Summary results/next steps: This paper reports molecular contamination measurement campaigns performed by a pool of European partners along the mask supply chain. It allows us to investigate, identify and quantify critical molecular contamination in mask pod, as well as VOC and humidity, issues depending on locations, uses, and carrier's type. Preliminary studies highlight initial process solutions for pods conditioning that are being used for short term industrialization and further industrialized.

Pattern Inspection of EUV Masks Using DUV Light

NASA Astrophysics Data System (ADS)

Liang, Ted; Tejnil, Edita; Stivers, Alan R.

2002-12-01

Inspection of extreme ultraviolet (EUV) lithography masks requires reflected light and this poses special challenges for inspection tool suppliers as well as for mask makers. Inspection must detect all the printable defects in the absorber pattern as well as printable process-related defects. Progress has been made under the NIST ATP project on "Intelligent Mask Inspection Systems for Next Generation Lithography" in assessing the factors that impact the inspection tool sensitivity. We report in this paper the inspection of EUV masks with programmed absorber defects using 257nm light. All the materials of interests for masks are highly absorptive to EUV light as compared to deep ultraviolet (DUV) light. Residues and contamination from mask fabrication process and handling are prone to be printable. Therefore, it is critical to understand their EUV printability and optical inspectability. Process related defects may include residual buffer layer such as oxide, organic contaminants and possible over-etch to the multilayer surface. Both simulation and experimental results will be presented in this paper.

Fabrication of a novel quartz micromachined gyroscope

NASA Astrophysics Data System (ADS)

Xie, Liqiang; Xing, Jianchun; Wang, Haoxu; Wu, Xuezhong

2015-04-01

A novel quartz micromachined gyroscope is proposed in this paper. The novel gyroscope is realized by quartz anisotropic wet etching and 3-dimensional electrodes deposition. In the quartz wet etching process, the quality of Cr/Au mask films affecting the process are studied by experiment. An excellent mask film with 100 Å Cr and 2000 Å Au is achieved by optimization of experimental parameters. Crystal facets after etching seriously affect the following sidewall electrodes deposition process and the structure's mechanical behaviours. Removal of crystal facets is successfully implemented by increasing etching time based on etching rate ratios between facets and crystal planes. In the electrodes deposition process, an aperture mask evaporation method is employed to prepare electrodes on 3-dimensional surfaces of the gyroscope structure. The alignments among the aperture masks are realized by the ABM™ Mask Aligner System. Based on the processes described above, a z-axis quartz gyroscope is fabricated successfully.

Landsat real-time processing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Davis, E.L.

A novel method for performing real-time acquisition and processing Landsat/EROS data covers all aspects including radiometric and geometric corrections of multispectral scanner or return-beam vidicon inputs, image enhancement, statistical analysis, feature extraction, and classification. Radiometric transformations include bias/gain adjustment, noise suppression, calibration, scan angle compensation, and illumination compensation, including topography and atmospheric effects. Correction or compensation for geometric distortion includes sensor-related distortions, such as centering, skew, size, scan nonlinearity, radial symmetry, and tangential symmetry. Also included are object image-related distortions such as aspect angle (altitude), scale distortion (altitude), terrain relief, and earth curvature. Ephemeral corrections are also applied to compensatemore » for satellite forward movement, earth rotation, altitude variations, satellite vibration, and mirror scan velocity. Image enhancement includes high-pass, low-pass, and Laplacian mask filtering and data restoration for intermittent losses. Resource classification is provided by statistical analysis including histograms, correlational analysis, matrix manipulations, and determination of spectral responses. Feature extraction includes spatial frequency analysis, which is used in parallel discriminant functions in each array processor for rapid determination. The technique uses integrated parallel array processors that decimate the tasks concurrently under supervision of a control processor. The operator-machine interface is optimized for programming ease and graphics image windowing.« less

Functional neuroanatomy of visual masking deficits in schizophrenia.

PubMed

Green, Michael F; Lee, Junghee; Cohen, Mark S; Engel, Steven A; Korb, Alexander S; Nuechterlein, Keith H; Wynn, Jonathan K; Glahn, David C

2009-12-01

Visual masking procedures assess the earliest stages of visual processing. Patients with schizophrenia reliably show deficits on visual masking, and these procedures have been used to explore vulnerability to schizophrenia, probe underlying neural circuits, and help explain functional outcome. To identify and compare regional brain activity associated with one form of visual masking (ie, backward masking) in schizophrenic patients and healthy controls. Subjects received functional magnetic resonance imaging scans. While in the scanner, subjects performed a backward masking task and were given 3 functional localizer activation scans to identify early visual processing regions of interest (ROIs). University of California, Los Angeles, and the Department of Veterans Affairs Greater Los Angeles Healthcare System. Nineteen patients with schizophrenia and 19 healthy control subjects. Main Outcome Measure The magnitude of the functional magnetic resonance imaging signal during backward masking. Two ROIs (lateral occipital complex [LO] and the human motion selective cortex [hMT+]) showed sensitivity to the effects of masking, meaning that signal in these areas increased as the target became more visible. Patients had lower activation than controls in LO across all levels of visibility but did not differ in other visual processing ROIs. Using whole-brain analyses, we also identified areas outside the ROIs that were sensitive to masking effects (including bilateral inferior parietal lobe and thalamus), but groups did not differ in signal magnitude in these areas. The study results support a key role in LO for visual masking, consistent with previous studies in healthy controls. The current results indicate that patients fail to activate LO to the same extent as controls during visual processing regardless of stimulus visibility, suggesting a neural basis for the visual masking deficit, and possibly other visual integration deficits, in schizophrenia.

Single-random-phase holographic encryption of images

NASA Astrophysics Data System (ADS)

Tsang, P. W. M.

2017-02-01

In this paper, a method is proposed for encrypting an optical image onto a phase-only hologram, utilizing a single random phase mask as the private encryption key. The encryption process can be divided into 3 stages. First the source image to be encrypted is scaled in size, and pasted onto an arbitrary position in a larger global image. The remaining areas of the global image that are not occupied by the source image could be filled with randomly generated contents. As such, the global image as a whole is very different from the source image, but at the same time the visual quality of the source image is preserved. Second, a digital Fresnel hologram is generated from the new image, and converted into a phase-only hologram based on bi-directional error diffusion. In the final stage, a fixed random phase mask is added to the phase-only hologram as the private encryption key. In the decryption process, the global image together with the source image it contained, can be reconstructed from the phase-only hologram if it is overlaid with the correct decryption key. The proposed method is highly resistant to different forms of Plain-Text-Attacks, which are commonly used to deduce the encryption key in existing holographic encryption process. In addition, both the encryption and the decryption processes are simple and easy to implement.

X-ray mask fabrication advancements at the Microlithographic Mask Development Center

NASA Astrophysics Data System (ADS)

Kimmel, Kurt R.; Hughes, Patrick J.

1996-05-01

The Microlithographic Mask Development Center (MMD) was established as the X-ray mask manufacturing facility at the IBM Microelectronics Division semiconductor fabricator in Essex Junction, Vermont. This center, in operation for over two years, produces high yielding, defect-free X-ray masks for competitive logic and memory products at 250nm groundrules and below. The MMD is a complete mask facility that manufactures silicon membrane mask blanks in the NIST format and finished masks with electroplated gold X-ray absorber. Mask patterning, with dimensions as small as 180 nm, is accomplished using IBM-built variable shaped spot e-beam systems. Masks are routinely inspected and repaired using state-of-the-art equipment: two KLA SEM Specs for defect inspection, a Leica LMS 2000 for image placement characterization, an Amray 2040c for image dimension characterization and a Micrion 8000 XMR for defect repair. This facility maintains a baseline mask process with daily production of 250nm, 32Mb SRAM line monitor masks for the continuous improvement of mask quality and processes. Development masks are produced for several semiconductor manufacturers including IBM, Motorola, Loral, and Sanders. Masks for 64Mb and 256Mb DRAM (IBM) and advanced logic/SRAM (IBM and Motorola) designs have also been delivered. This paper describes the MMD facility and its technical capabilities. Key manufacturing metrics such as mask turnaround time, parametric yield learning and defect reduction activities are highlighted. The challenges associated with improved mask quality, sub-180nm mask fabrication, and the transition to refractory metal absorber are discussed.

Mask CD relationship to temperature at the time backscatter is received

NASA Astrophysics Data System (ADS)

Zable, Harold; Kronmiller, Tom; Pearman, Ryan; Guthrie, Bill; Shirali, Nagesh; Masuda, Yukihiro; Kamikubo, Takashi; Nakayamada, Noriaki; Fujimura, Aki

2017-07-01

Mask writers need to be able to write sub-50nm features accurately. Nano-imprint lithography (NIL) masters need to create sub-20nm line and space (L:S) patterns reliably. Increasingly slower resists are deployed, but mask write times need to remain reasonable. The leading edge EBM-9500 offers 1200A/cm2 current density to shoot variable shaped beam (VSB) to write the masks. Last year, thermal effect correction (TEC) was introduced by NuFlare in the EBM-95001. It is a GPU-accelerated inline correction for the effect that the temperature of the resist has on CD. For example, a 100nm CD may print at 102nm where that area was at a comparably high temperature at the time of the shot. Since thermal effect is a temporal effect, the simulated temperature of the surface of the mask is dynamically updated for the effect of each shot in order to accurately predict the cumulative effect that is the temperature at the location of the shot at the time of the shot and therefore its impact on CD. The shot dose is changed to reverse the effects of the temperature change. This paper for the first time reveals an enhancement to this thermal model and a simulator for it. It turns out that the temperature at the time each location receives backscatter from other shots also make a difference to the CD. The effect is secondary, but still measurable for some resists and substrates. Results of a test-chip study will be presented. The computation required for the backscatter effect is substantial. It has been demonstrated that this calculation can be performed fast enough to be inline with the EBM-9500 with a reasonable-sized computing platform. Run-time results and the computing architecture will be presented.

Reinforced Masks for Ion Plating of Solar Cells

NASA Technical Reports Server (NTRS)

Conley, W. R.; Swick, E. G.; Volkers, J. C.

1987-01-01

Proposed mask for ion plating of surface electrodes on silicon solar cells reinforced to hold shape better during handling. Fabrication process for improved mask similar to conventional mask. Additional cuts and bends made in wide diametral strip to form bridges between pairs of mask fingers facing each other across this strip. Bridges high enough not to act as masks so entire strip area plated.

Full-chip level MEEF analysis using model based lithography verification

NASA Astrophysics Data System (ADS)

Kim, Juhwan; Wang, Lantian; Zhang, Daniel; Tang, Zongwu

2005-11-01

MEEF (Mask Error Enhancement Factor) has become a critical factor in CD uniformity control since optical lithography process moved to sub-resolution era. A lot of studies have been done by quantifying the impact of the mask CD (Critical Dimension) errors on the wafer CD errors1-2. However, the benefits from those studies were restricted only to small pattern areas of the full-chip data due to long simulation time. As fast turn around time can be achieved for the complicated verifications on very large data by linearly scalable distributed processing technology, model-based lithography verification becomes feasible for various types of applications such as post mask synthesis data sign off for mask tape out in production and lithography process development with full-chip data3,4,5. In this study, we introduced two useful methodologies for the full-chip level verification of mask error impact on wafer lithography patterning process. One methodology is to check MEEF distribution in addition to CD distribution through process window, which can be used for RET/OPC optimization at R&D stage. The other is to check mask error sensitivity on potential pinch and bridge hotspots through lithography process variation, where the outputs can be passed on to Mask CD metrology to add CD measurements on those hotspot locations. Two different OPC data were compared using the two methodologies in this study.

Strategy optimization for mask rule check in wafer fab

NASA Astrophysics Data System (ADS)

Yang, Chuen Huei; Lin, Shaina; Lin, Roger; Wang, Alice; Lee, Rachel; Deng, Erwin

2015-07-01

Photolithography process is getting more and more sophisticated for wafer production following Moore's law. Therefore, for wafer fab, consolidated and close cooperation with mask house is a key to achieve silicon wafer success. However, generally speaking, it is not easy to preserve such partnership because many engineering efforts and frequent communication are indispensable. The inattentive connection is obvious in mask rule check (MRC). Mask houses will do their own MRC at job deck stage, but the checking is only for identification of mask process limitation including writing, etching, inspection, metrology, etc. No further checking in terms of wafer process concerned mask data errors will be implemented after data files of whole mask are composed in mask house. There are still many potential data errors even post-OPC verification has been done for main circuits. What mentioned here are the kinds of errors which will only occur as main circuits combined with frame and dummy patterns to form whole reticle. Therefore, strategy optimization is on-going in UMC to evaluate MRC especially for wafer fab concerned errors. The prerequisite is that no impact on mask delivery cycle time even adding this extra checking. A full-mask checking based on job deck in gds or oasis format is necessary in order to secure acceptable run time. Form of the summarized error report generated by this checking is also crucial because user friendly interface will shorten engineers' judgment time to release mask for writing. This paper will survey the key factors of MRC in wafer fab.

SEMATECH produces defect-free EUV mask blanks: defect yield and immediate challenges

NASA Astrophysics Data System (ADS)

Antohe, Alin O.; Balachandran, Dave; He, Long; Kearney, Patrick; Karumuri, Anil; Goodwin, Frank; Cummings, Kevin

2015-03-01

Availability of defect-free reflective mask has been one of the most critical challenges to extreme ultraviolet lithography (EUVL). To mitigate the risk, significant progress has been made on defect detection, pattern shifting, and defect repair. Clearly such mitigation strategies are based on the assumption that defect counts and sizes from incoming mask blanks must be below practical levels depending on mask specifics. The leading industry consensus for early mask product development is that there should be no defects greater than 80 nm in the quality area, 132 mm x 132 mm. In addition less than 10 defects smaller than 80 nm may be mitigable. SEMATECH has been focused on EUV mask blank defect reduction using Veeco Nexus TM IBD platform, the industry standard for mask blank production, and assessing if IBD technology can be evolved to a manufacturing solution. SEMATECH has recently announced a breakthrough reduction of defects in the mask blank deposition process resulting in the production of two defect-free EUV mask blanks at 54 nm inspection sensitivity (SiO2 equivalent). This paper will discuss the dramatic reduction of baseline EUV mask blank defects, review the current deposition process run and compare results with previous process runs. Likely causes of remaining defects will be discussed based on analyses as characterized by their compositions and whether defects are embedded in the multilayer stack or non-embedded.

High performance, inexpensive solar cell process capable of a high degree of automation

NASA Technical Reports Server (NTRS)

Shah, P.; Fuller, C. R.

1976-01-01

This paper proposes a process for inexpensive high performance solar cell fabrication that can be automated for further cost reduction and higher throughputs. The unique feature of the process is the use of oxides as doping sources for simultaneous n(+) junction formation and back p(+) layer, as a mask for metallization and as an in situ AR coating for spectrum matching. Cost analysis is performed to show that significant cost reductions over the conventional process is possible using the proposed scheme and the cost intensive steps are identified which can be further reduced to make the process compatible with the needed price goals of 50 cents/watt. The process was demonstrated by fabricating n(+)-p cells using Arsenic doped oxides. Simple n(+)-p structure cells showed corrected efficiencies of 14.5% (AMO) and 12% with doped oxide as an in situ antireflection coating.

Defect reduction for semiconductor memory applications using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Ye, Zhengmao; Luo, Kang; Irving, J. W.; Lu, Xiaoming; Zhang, Wei; Fletcher, Brian; Liu, Weijun; Xu, Frank; LaBrake, Dwayne; Resnick, Douglas; Sreenivasan, S. V.

2013-03-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash Imprint Lithography (J-FIL) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed leaving a patterned resist on the substrate. Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the defect specifications of high end memory devices. Typical defectivity targets are on the order of 0.10/cm2. In previous studies, we have focused on defects such as random non-fill defects occurring during the resist filling process and repeater defects caused by interactions with particles on the substrate. In this work, we attempted to identify the critical imprint defect types using a mask with NAND Flash-like patterns at dimensions as small as 26nm. The two key defect types identified were line break defects induced by small particulates and airborne contaminants which result in local adhesion failure. After identification, the root cause of the defect was determined, and corrective measures were taken to either eliminate or reduce the defect source. As a result, we have been able to reduce defectivity levels by more than three orders of magnitude in only 12 months and are now achieving defectivity adders as small as 2 adders per lot of wafers.

Machine learning for inverse lithography: using stochastic gradient descent for robust photomask synthesis

NASA Astrophysics Data System (ADS)

Jia, Ningning; Y Lam, Edmund

2010-04-01

Inverse lithography technology (ILT) synthesizes photomasks by solving an inverse imaging problem through optimization of an appropriate functional. Much effort on ILT is dedicated to deriving superior masks at a nominal process condition. However, the lower k1 factor causes the mask to be more sensitive to process variations. Robustness to major process variations, such as focus and dose variations, is desired. In this paper, we consider the focus variation as a stochastic variable, and treat the mask design as a machine learning problem. The stochastic gradient descent approach, which is a useful tool in machine learning, is adopted to train the mask design. Compared with previous work, simulation shows that the proposed algorithm is effective in producing robust masks.

Optimizing parameter choice for FSL-Brain Extraction Tool (BET) on 3D T1 images in multiple sclerosis.

PubMed

Popescu, V; Battaglini, M; Hoogstrate, W S; Verfaillie, S C J; Sluimer, I C; van Schijndel, R A; van Dijk, B W; Cover, K S; Knol, D L; Jenkinson, M; Barkhof, F; de Stefano, N; Vrenken, H

2012-07-16

Brain atrophy studies often use FSL-BET (Brain Extraction Tool) as the first step of image processing. Default BET does not always give satisfactory results on 3DT1 MR images, which negatively impacts atrophy measurements. Finding the right alternative BET settings can be a difficult and time-consuming task, which can introduce unwanted variability. To systematically analyze the performance of BET in images of MS patients by varying its parameters and options combinations, and quantitatively comparing its results to a manual gold standard. Images from 159 MS patients were selected from different MAGNIMS consortium centers, and 16 different 3DT1 acquisition protocols at 1.5 T or 3T. Before running BET, one of three pre-processing pipelines was applied: (1) no pre-processing, (2) removal of neck slices, or (3) additional N3 inhomogeneity correction. Then BET was applied, systematically varying the fractional intensity threshold (the "f" parameter) and with either one of the main BET options ("B" - bias field correction and neck cleanup, "R" - robust brain center estimation, or "S" - eye and optic nerve cleanup) or none. For comparison, intracranial cavity masks were manually created for all image volumes. FSL-FAST (FMRIB's Automated Segmentation Tool) tissue-type segmentation was run on all BET output images and on the image volumes masked with the manual intracranial cavity masks (thus creating the gold-standard tissue masks). The resulting brain tissue masks were quantitatively compared to the gold standard using Dice overlap coefficient (DOC). Normalized brain volumes (NBV) were calculated with SIENAX. NBV values obtained using for SIENAX other BET settings than default were compared to gold standard NBV with the paired t-test. The parameter/preprocessing/options combinations resulted in 20,988 BET runs. The median DOC for default BET (f=0.5, g=0) was 0.913 (range 0.321-0.977) across all 159 native scans. For all acquisition protocols, brain extraction was substantially improved for lower values of "f" than the default value. Using native images, optimum BET performance was observed for f=0.2 with option "B", giving median DOC=0.979 (range 0.867-0.994). Using neck removal before BET, optimum BET performance was observed for f=0.1 with option "B", giving median DOC 0.983 (range 0.844-0.996). Using the above BET-options for SIENAX instead of default, the NBV values obtained from images after neck removal with f=0.1 and option "B" did not differ statistically from NBV values obtained with gold-standard. Although default BET performs reasonably well on most 3DT1 images of MS patients, the performance can be improved substantially. The removal of the neck slices, either externally or within BET, has a marked positive effect on the brain extraction quality. BET option "B" with f=0.1 after removal of the neck slices seems to work best for all acquisition protocols. Copyright © 2012 Elsevier Inc. All rights reserved.

Brightness masking is modulated by disparity structure.

PubMed

Pelekanos, Vassilis; Ban, Hiroshi; Welchman, Andrew E

2015-05-01

The luminance contrast at the borders of a surface strongly influences surface's apparent brightness, as demonstrated by a number of classic visual illusions. Such phenomena are compatible with a propagation mechanism believed to spread contrast information from borders to the interior. This process is disrupted by masking, where the perceived brightness of a target is reduced by the brief presentation of a mask (Paradiso & Nakayama, 1991), but the exact visual stage that this happens remains unclear. In the present study, we examined whether brightness masking occurs at a monocular-, or a binocular-level of the visual hierarchy. We used backward masking, whereby a briefly presented target stimulus is disrupted by a mask coming soon afterwards, to show that brightness masking is affected by binocular stages of the visual processing. We manipulated the 3-D configurations (slant direction) of the target and mask and measured the differential disruption that masking causes on brightness estimation. We found that the masking effect was weaker when stimuli had a different slant. We suggest that brightness masking is partly mediated by mid-level neuronal mechanisms, at a stage where binocular disparity edge structure has been extracted. Copyright © 2015 The Authors. Published by Elsevier Ltd.. All rights reserved.

Challenges of anamorphic high-NA lithography and mask making

NASA Astrophysics Data System (ADS)

Hsu, Stephen D.; Liu, Jingjing

2017-06-01

Chip makers are actively working on the adoption of 0.33 numerical aperture (NA) EUV scanners for the 7-nm and 5-nm nodes (B. Turko, S. L. Carson, A. Lio, T. Liang, M. Phillips, et al., in `Proc. SPIE9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 977602 (2016) doi: 10.1117/12.2225014; A. Lio, in `Proc. SPIE9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 97760V (2016) doi: 10.1117/12.2225017). In the meantime, leading foundries and integrated device manufacturers are starting to investigate patterning options beyond the 5-nm node (O. Wood, S. Raghunathan, P. Mangat, V. Philipsen, V. Luong, et al., in `Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI', vol. 94220I (2015) doi: 10.1117/12.2085022). To minimize the cost and process complexity of multiple patterning beyond the 5-nm node, EUV high-NA single-exposure patterning is a preferred method over EUV double patterning (O. Wood, S. Raghunathan, P. Mangat, V. Philipsen, V. Luong, et al., in `Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI', vol. 94220I (2015) doi: 10.1117/12.2085022; J. van Schoot, K. van Ingen Schenau, G. Bottiglieri, K. Troost, J. Zimmerman, et al., `Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 97761I (2016) doi: 10.1117/12.2220150). The EUV high-NA scanner equipped with a projection lens of 0.55 NA is designed to support resolutions below 10 nm. The high-NA system is beneficial for enhancing resolution, minimizing mask proximity correction bias, improving normalized image log slope (NILS), and controlling CD uniformity (CDU). However, increasing NA from 0.33 to 0.55 reduces the depth of focus (DOF) significantly. Therefore, the source mask optimization (SMO) with sub-resolution assist features (SRAFs) are needed to increase DOF to meet the demanding full chip process control requirements (S. Hsu, R. Howell, J. Jia, H.-Y. Liu, K. Gronlund, et al., EUV `Proc. SPIE9048, Extreme Ultraviolet (EUV) Lithography VI', (2015) doi: 10.1117/12.2086074). To ensure no assist feature printing, the assist feature sizes need to be scaled with λ/NA. The extremely small SRAF width (below 25 nm on the reticle) is difficult to fabricate across the full reticle. In this paper, we introduce an innovative `attenuated SRAF' to improve SRAF manufacturability and still maintain the process window benefit. A new mask fabrication process is proposed to use existing mask-making capability to manufacture the attenuated SRAFs. The high-NA EUV system utilizes anamorphic reduction; 4× in the horizontal (slit) direction and 8× in the vertical (scanning) direction (J. van Schoot, K. van Ingen Schenau, G. Bottiglieri, K. Troost, J. Zimmerman, et al., `Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 97761I (2016) doi: 10.1117/12.2220150; B. Kneer, S. Migura, W. Kaiser, J. T. Neumann, J. van Schoot, in `Proc. SPIE9422, Extreme Ultraviolet (EUV) Lithography VI', vol. 94221G (2015) doi: 10.1117/12.2175488). For an anamorphic system, the magnification has an angular dependency, and thus, familiar mask specifications such as mask error factor (MEF) need to be redefined. Similarly, mask-manufacturing rule check (MRC) needs to consider feature orientation.

DSCOVR_EPIC_L2_MAIAC_01

Atmospheric Science Data Center

2018-06-25

... several atmospheric quantities including cloud mask and aerosol optical depth (AOD) required for atmospheric correction. The parameters ... Project Title:  DSCOVR Discipline:  Aerosol Clouds Version:  V1 Level:  L2 ...

Masking Level Difference Response Norms from Learning Disabled Individuals.

ERIC Educational Resources Information Center

Waryas, Paul A.; Battin, R. Ray

1985-01-01

The study presents normative data on Masking Level Difference (an improvement of the auditory processing of interaural time/intensity differences between signals and masking noises) for 90 learning disabled persons (4-35 years old). It was concluded that the MLD may quickly screen for auditory processing problems. (CL)

Masked Speech Recognition and Reading Ability in School-Age Children: Is There a Relationship?

ERIC Educational Resources Information Center

Miller, Gabrielle; Lewis, Barbara; Benchek, Penelope; Buss, Emily; Calandruccio, Lauren

2018-01-01

Purpose: The relationship between reading (decoding) skills, phonological processing abilities, and masked speech recognition in typically developing children was explored. This experiment was designed to evaluate the relationship between phonological processing and decoding abilities and 2 aspects of masked speech recognition in typically…

Analytical treatment of the deformation behavior of EUVL masks during electrostatic chucking

NASA Astrophysics Data System (ADS)

Brandstetter, Gerd; Govindjee, Sanjay

2012-03-01

A new analytical approach is presented to predict mask deformation during electro-static chucking in next generation extreme-ultraviolet-lithography (EUVL). Given an arbitrary profile measurement of the mask and chuck non-flatness, this method has been developed as an alternative to time-consuming finite element simulations for overlay error correction algorithms. We consider the feature transfer of each harmonic component in the profile shapes via linear elasticity theory and demonstrate analytically how high spatial frequencies are filtered. The method is compared to presumably more accurate finite element simulations and has been tested successfully in an overlay error compensation experiment, where the residual error y-component could be reduced by a factor 2. As a side outcome, the formulation provides a tool to estimate the critical pin-size and -pitch such that the distortion on the mask front-side remains within given tolerances. We find for a numerical example that pin-pitches of less than 5 mm will result in a mask pattern-distortion of less than 1 nm if the chucking pressure is below 30 kPa.

Analytical treatment of the deformation behavior of extreme-ultraviolet-lithography masks during electrostatic chucking

NASA Astrophysics Data System (ADS)

Brandstetter, Gerd; Govindjee, Sanjay

2012-10-01

A new analytical approach is presented to predict mask deformation during electrostatic chucking in next-generation extreme-ultraviolet-lithography. Given an arbitrary profile measurement of the mask and chuck nonflatness, this method has been developed as an alternative to time-consuming finite element simulations for overlay error correction algorithms. We consider the feature transfer of each harmonic component in the profile shapes via linear elasticity theory and demonstrate analytically how high spatial frequencies are filtered. The method is compared to presumably more accurate finite element simulations and has been tested successfully in an overlay error compensation experiment, where the residual error y-component could be reduced by a factor of 2. As a side outcome, the formulation provides a tool to estimate the critical pin-size and -pitch such that the distortion on the mask front-side remains within given tolerances. We find for a numerical example that pin-pitches of less than 5 mm will result in a mask pattern distortion of less than 1 nm if the chucking pressure is below 30 kPa.

Visual Masking in Schizophrenia: Overview and Theoretical Implications

PubMed Central

Green, Michael F.; Lee, Junghee; Wynn, Jonathan K.; Mathis, Kristopher I.

2011-01-01

Visual masking provides several key advantages for exploring the earliest stages of visual processing in schizophrenia: it allows for control over timing at the millisecond level, there are several well-supported theories of the underlying neurobiology of visual masking, and it is amenable to examination by electroencephalogram (EEG) and functional magnetic resonance imaging (fMRI). In this paper, we provide an overview of the visual masking impairment schizophrenia, including the relevant theoretical mechanisms for masking impairment. We will discuss its relationship to clinical symptoms, antipsychotic medications, diagnostic specificity, and presence in at-risk populations. As part of this overview, we will cover the neural correlates of visual masking based on recent findings from EEG and fMRI. Finally, we will suggest a possible mechanism that could explain the patterns of masking findings and other visual processing findings in schizophrenia. PMID:21606322

Single closed contact for 0.18-micron photolithography process

NASA Astrophysics Data System (ADS)

Cheung, Cristina; Phan, Khoi A.; Chiu, Robert J.

2000-06-01

With the rapid advances of deep submicron semiconductor technology, identifying defects is converted into a challenge for different modules in the fabrication of chips. Yield engineers often do bitmap on a memory circuit array (SRAM) to identify the failure bits. This is followed by a wafer stripback to look for visual defects at each deprocessed layer for feedback to the Fab. However, to identify the root cause of a problem, Fab engineers must be able to detect similar defects either on the product wafers in process or some short loop test wafers. In the photolithography process, we recognize that the detection of defects is becoming as important as satisfying the critical dimension (CD) of the device. For a multi-level metallization chemically mechanical polish backend process, it is very difficult to detect missing contacts or via at the masking steps due to metal grain roughness, film color variation and/or previous layer defects. Often, photolithography engineer must depend on Photo Cell Monitor (PCM) and short loop experiments for controlling baseline defects and improvement. In this paper, we discuss the findings on the Poly mask PCM and the Contact mask PCM. We present the comparison between the Poly mask and the Contact mask of the I-line Phase Shifted Via mask and DUV mask process for a 0.18 micron process technology. The correlation and the different type of defects between the Contact PCM and the Poly Mask are discussed. The Contact PCM was found to be more sensitive and correlated to contact failure at sort yield better. We also dedicate to study the root cause of a single closed contact hole in the Contact mask short loop experiment for a 0.18 micron process technology. A single closed contact defect was often caused by the developer process, such as bubbles in the line, resist residue left behind, and the rinse mechanism. We also found surfactant solution helps to improve the surface tension of the wafer for the developer process and this prevents/eliminates a single closed contact hole defects. The applications and effects of using different substrates like SiON, different thicknesses of Oxides, and Poly in the Contact Photo Mask is shown. Finally, some defect troubleshooting techniques and the root cause analysis are also discussed.

Application of advanced structure to multi-tone mask for FPD process

NASA Astrophysics Data System (ADS)

Song, Jin-Han; Jeong, Jin-Woong; Kim, Kyu-Sik; Jeong, Woo-Gun; Yun, Sang-Pil; Lee, Dong-Heok; Choi, Sang-Soo

2017-07-01

In accordance with improvement of FPD technology, masks such as phase shift mask (PSM) and multi-tone mask (MTM) for a particular purpose also have been developed. Above all, the MTM consisted of more than tri-tone transmittance has a substantial advantage which enables to reduce the number of mask demand in FPD fabrication process contrast to normal mask of two-tone transmittance.[1,2] A chromium (Cr)-based MTM (Typically top type) is being widely employed because of convenience of etch process caused by its only Cr-based structure consisted of Cr absorber layer and Cr half-tone layer. However, the top type of Cr-based MTM demands two Cr sputtering processes after each layer etching process and writing process. For this reason, a different material from the Cr-based MTM is required for reduction of mask fabrication time and cost. In this study, we evaluate a MTM which has a structure combined Cr with molybdenum silicide (MoSi) to resolve the issues mentioned above. The MoSi which is demonstrated by integrated circuit (IC) process is a suitable material for MTM evaluation. This structure could realize multi-transmittance in common with the Cr-based MTM. Moreover, it enables to reduce the number of sputtering process. We investigate a optimized structure upon consideration of productivity along with performance such as critical dimension (CD) variation and transmittance range of each structure. The transmittance is targeted at h-line wavelength (405 nm) in the evaluation. Compared with Cr-based MTM, the performances of all Cr-/MoSi-based MTMs are considered.

Quartz 9-inch size mask blanks for ArF PSM (Phase Shift Mask)

NASA Astrophysics Data System (ADS)

Harashima, Noriyuki; Isozaki, Tatsuya; Kawanishi, Arata; Kanai, Shuichiro; Kageyama, Kagehiro; Iso, Hiroyuki; Chishima, Tatsuya

2017-07-01

Semiconductor technology nodes are steadily miniaturizing. On the other hand, various efforts have been made to reduce costs, mass production lines have shifted from 200 mmφ of Si wafer to 300 mmφ, and technology development of Si wafer 450 mmφ is also in progress. As a photomask, 6-inch size binary Cr mask has been used for many years, but in recent years, the use of 9-inch binary Cr masks for Proximity Lithography Process in automotive applications, MEMS, packages, etc. has increased, and cost reduction has been taken. Since the miniaturization will progress in the above applications in the future, products corresponding to miniaturization are also desired in 9-inch photomasks. The high grade Cr - binary mask blanks used in proximity exposure process, there is a prospect of being able to use it by ULVAC COATING CORPORATION's tireless research. As further demands for miniaturization, KrF and ArF Lithography Process, which are used for steppers and scanners , there are also a demand for 9-inch size Mask Blanks. In ULVAC COATING CORPORATION, we developed a 9 - inch size KrF PSM mask Blanks prototype in 2016 and proposed a new high grade 9 - inch photomask. This time, we have further investigated and developed 9-inch size ArF PSM Mask Blanks corresponding to ArF Lithography Process, so we report it.

A First Order Wavefront Estimation Algorithm for P1640 Calibrator

NASA Technical Reports Server (NTRS)

Zhaia, C.; Vasisht, G.; Shao, M.; Lockhart, T.; Cady, E.; Oppenheimer, B.; Burruss, R.; Roberts, J.; Beichman, C.; Brenner, D.;

Perceptual learning for speech in noise after application of binary time-frequency masks

PubMed Central

Ahmadi, Mahnaz; Gross, Vauna L.; Sinex, Donal G.

2013-01-01

Ideal time-frequency (TF) masks can reject noise and improve the recognition of speech-noise mixtures. An ideal TF mask is constructed with prior knowledge of the target speech signal. The intelligibility of a processed speech-noise mixture depends upon the threshold criterion used to define the TF mask. The study reported here assessed the effect of training on the recognition of speech in noise after processing by ideal TF masks that did not restore perfect speech intelligibility. Two groups of listeners with normal hearing listened to speech-noise mixtures processed by TF masks calculated with different threshold criteria. For each group, a threshold criterion that initially produced word recognition scores between 0.56–0.69 was chosen for training. Listeners practiced with one set of TF-masked sentences until their word recognition performance approached asymptote. Perceptual learning was quantified by comparing word-recognition scores in the first and last training sessions. Word recognition scores improved with practice for all listeners with the greatest improvement observed for the same materials used in training. PMID:23464038

Cerebral Asymmetries in Early Orthographic and Phonological Reading Processes: Evidence from Backward Masking

ERIC Educational Resources Information Center

Halderman, Laura K.; Chiarello, Christine

2005-01-01

A lateralized backward masking paradigm was used to examine hemisphere differences in orthographic and phonological processes at an early time course of word recognition. Targets (e.g., bowl) were presented and backward masked by either pseudohomophones of the target word (orthographically and phonologically similar, e.g., BOAL), orthographically…

Dry etching technologies for reflective multilayer

NASA Astrophysics Data System (ADS)

Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

2012-11-01

We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

Lithographic process window optimization for mask aligner proximity lithography

NASA Astrophysics Data System (ADS)

Voelkel, Reinhard; Vogler, Uwe; Bramati, Arianna; Erdmann, Andreas; Ünal, Nezih; Hofmann, Ulrich; Hennemeyer, Marc; Zoberbier, Ralph; Nguyen, David; Brugger, Juergen

2014-03-01

We introduce a complete methodology for process window optimization in proximity mask aligner lithography. The commercially available lithography simulation software LAB from GenISys GmbH was used for simulation of light propagation and 3D resist development. The methodology was tested for the practical example of lines and spaces, 5 micron half-pitch, printed in a 1 micron thick layer of AZ® 1512HS1 positive photoresist on a silicon wafer. A SUSS MicroTec MA8 mask aligner, equipped with MO Exposure Optics® was used in simulation and experiment. MO Exposure Optics® is the latest generation of illumination systems for mask aligners. MO Exposure Optics® provides telecentric illumination and excellent light uniformity over the full mask field. MO Exposure Optics® allows the lithography engineer to freely shape the angular spectrum of the illumination light (customized illumination), which is a mandatory requirement for process window optimization. Three different illumination settings have been tested for 0 to 100 micron proximity gap. The results obtained prove, that the introduced process window methodology is a major step forward to obtain more robust processes in mask aligner lithography. The most remarkable outcome of the presented study is that a smaller exposure gap does not automatically lead to better print results in proximity lithography - what the "good instinct" of a lithographer would expect. With more than 5'000 mask aligners installed in research and industry worldwide, the proposed process window methodology might have significant impact on yield improvement and cost saving in industry.

Dry etched SiO2 Mask for HgCdTe Etching Process

NASA Astrophysics Data System (ADS)

Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

2016-09-01

A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

Masking Strategies for Image Manifolds.

PubMed

Dadkhahi, Hamid; Duarte, Marco F

2016-07-07

We consider the problem of selecting an optimal mask for an image manifold, i.e., choosing a subset of the pixels of the image that preserves the manifold's geometric structure present in the original data. Such masking implements a form of compressive sensing through emerging imaging sensor platforms for which the power expense grows with the number of pixels acquired. Our goal is for the manifold learned from masked images to resemble its full image counterpart as closely as possible. More precisely, we show that one can indeed accurately learn an image manifold without having to consider a large majority of the image pixels. In doing so, we consider two masking methods that preserve the local and global geometric structure of the manifold, respectively. In each case, the process of finding the optimal masking pattern can be cast as a binary integer program, which is computationally expensive but can be approximated by a fast greedy algorithm. Numerical experiments show that the relevant manifold structure is preserved through the datadependent masking process, even for modest mask sizes.

Suppression of vegetation in LANDSAT ETM+ remote sensing images

NASA Astrophysics Data System (ADS)

Yu, Le; Porwal, Alok; Holden, Eun-Jung; Dentith, Michael

2010-05-01

Vegetation cover is an impediment to the interpretation of multispectral remote sensing images for geological applications, especially in densely vegetated terrains. In order to enhance the underlying geological information in such terrains, it is desirable to suppress the reflectance component of vegetation. One form of spectral unmixing that has been successfully used for vegetation reflectance suppression in multispectral images is called "forced invariance". It is based on segregating components of the reflectance spectrum that are invariant with respect to a specific spectral index such as the NDVI. The forced invariance method uses algorithms such as software defoliation. However, the outputs of software defoliation are single channel data, which are not amenable to geological interpretations. Crippen and Blom (2001) proposed a new forced invariance algorithm that utilizes band statistics, rather than band ratios. The authors demonstrated the effectiveness of their algorithms on a LANDSAT TM scene from Nevada, USA, especially in open canopy areas in mixed and semi-arid terrains. In this presentation, we report the results of our experimentation with this algorithm on a densely to sparsely vegetated Landsat ETM+ scene. We selected a scene (Path 119, Row 39) acquired on 18th July, 2004. Two study areas located around the city of Hangzhou, eastern China were tested. One of them covers uninhabited hilly terrain characterized by low rugged topography, parts of the hills are densely vegetated; another one covers both inhabited urban areas and uninhabited hilly terrain, which is densely vegetated. Crippen and Blom's algorithm is implemented in the following sequential steps: (1) dark pixel correction; (2) vegetation index calculation; (3) estimation of statistical relationship between vegetation index and digital number (DN) values for each band; (4) calculation of a smooth best-fit curve for the above relationships; and finally, (5) selection of a target average DN value and scaling all pixels at each vegetation index level by an amount that shifts the curve to the target digital number (DN). The main drawback of their algorithm is severe distortions of the DN values of non-vegetated areas, a suggested solution is masking outliers such as cloud, water, etc. We therefore extend this algorithm by masking non-vegetated areas. Our algorithm comprises the following three steps: (1) masking of barren or sparsely vegetated areas using a threshold based on a vegetation index that is calculated after atmosphere correction (dark pixel correction and ACTOR were compared) in order to conserve their original spectral information through the subsequent processing; (2) applying Crippen and Blom's forced invariance algorithm to suppress the spectral response of vegetation only in vegetated areas; and (3) combining the processed vegetated areas with the masked barren or sparsely vegetated areas followed by histogram equalization to eliminate the differences in color-scales between these two types of areas, and enhance the integrated image. The output images of both study areas showed significant improvement over the original images in terms of suppression of vegetation reflectance and enhancement of the underlying geological information. The processed images show clear banding, probably associated with lithological variations in the underlying rock formations. The colors of non-vegetated pixels are distorted in the unmasked results but in the same location the pixels in the masked results show regions of higher contrast. We conclude that the algorithm offers an effective way to enhance geological information in LANDSAT TM/ETM+ images of terrains with significant vegetation cover. It is also suitable to other multispectral satellite data have bands in similar wavelength regions. In addition, an application of this method to hyperspectral data may be possible as long as it can provide the vegetation band ratios.

A mask quality control tool for the OSIRIS multi-object spectrograph

NASA Astrophysics Data System (ADS)

López-Ruiz, J. C.; Vaz Cedillo, Jacinto Javier; Ederoclite, Alessandro; Bongiovanni, Ángel; González Escalera, Víctor

2012-09-01

OSIRIS multi object spectrograph uses a set of user-customised-masks, which are manufactured on-demand. The manufacturing process consists of drilling the specified slits on the mask with the required accuracy. Ensuring that slits are on the right place when observing is of vital importance. We present a tool for checking the quality of the process of manufacturing the masks which is based on analyzing the instrument images obtained with the manufactured masks on place. The tool extracts the slit information from these images, relates specifications with the extracted slit information, and finally communicates to the operator if the manufactured mask fulfills the expectations of the mask designer. The proposed tool has been built using scripting languages and using standard libraries such as opencv, pyraf and scipy. The software architecture, advantages and limits of this tool in the lifecycle of a multiobject acquisition are presented.

Antigen Masking During Fixation and Embedding, Dissected

PubMed Central

Scalia, Carla Rossana; Boi, Giovanna; Bolognesi, Maddalena Maria; Riva, Lorella; Manzoni, Marco; DeSmedt, Linde; Bosisio, Francesca Maria; Ronchi, Susanna; Leone, Biagio Eugenio; Cattoretti, Giorgio

2016-01-01

Antigen masking in routinely processed tissue is a poorly understood process caused by multiple factors. We sought to dissect the effect on antigenicity of each step of processing by using frozen sections as proxies of the whole tissue. An equivalent extent of antigen masking occurs across variable fixation times at room temperature. Most antigens benefit from longer fixation times (>24 hr) for optimal detection after antigen retrieval (AR; for example, Ki-67, bcl-2, ER). The transfer to a graded alcohol series results in an enhanced staining effect, reproduced by treating the sections with detergents, possibly because of a better access of the polymeric immunohistochemical detection system to tissue structures. A second round of masking occurs upon entering the clearing agent, mostly at the paraffin embedding step. This may depend on the non-freezable water removal. AR fully reverses the masking due both to the fixation time and the paraffin embedding. AR itself destroys some epitopes which do not survive routine processing. Processed frozen sections are a tool to investigate fixation and processing requirements for antigens in routine specimens. PMID:27798289

2013 mask industry survey

NASA Astrophysics Data System (ADS)

Malloy, Matt

2013-09-01

A comprehensive survey was sent to merchant and captive mask shops to gather information about the mask industry as an objective assessment of its overall condition. 2013 marks the 12th consecutive year for this process. Historical topics including general mask profile, mask processing, data and write time, yield and yield loss, delivery times, maintenance, and returns were included and new topics were added. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the mask industry. While each year's survey includes minor updates based on feedback from past years and the need to collect additional data on key topics, the bulk of the survey and reporting structure have remained relatively constant. A series of improvements is being phased in beginning in 2013 to add value to a wider audience, while at the same time retaining the historical content required for trend analyses of the traditional metrics. Additions in 2013 include topics such as top challenges, future concerns, and additional details in key aspects of mask masking, such as the number of masks per mask set per ground rule, minimum mask resolution shipped, and yield by ground rule. These expansions beyond the historical topics are aimed at identifying common issues, gaps, and needs. They will also provide a better understanding of real-life mask requirements and capabilities for comparison to the International Technology Roadmap for Semiconductors (ITRS).

Intact figure-ground segmentation in schizophrenia.

PubMed

Herzog, Michael H; Kopmann, Sabine; Brand, Andreas

2004-11-30

As revealed by backward masking studies, schizophrenic patients show strong impairments of early visual processing. However, the underlying temporal mechanisms are not yet well understood. To shed light on the exact timing of these deficits, we employed a paradigm in which two masks follow each other. We investigated 16 medicated schizophrenic patients and a matched group of 14 controls with a new backward masking technique, shine-through. In accordance with other masking studies, schizophrenic patients require a dramatically longer processing time to reach a predefined performance level compared with healthy subjects. However, patients are surprisingly sensitive to subtle differences in the timing of the two masks, revealing good temporal resolution. This good temporal resolution indicates intact and fast perceptual grouping and figure-ground segmentation in spite of high susceptibility to masking procedures in schizophrenia.

Edge-illumination x-ray phase contrast imaging with Pt-based metallic glass masks

NASA Astrophysics Data System (ADS)

Saghamanesh, Somayeh; Aghamiri, Seyed Mahmoud-Reza; Olivo, Alessandro; Sadeghilarijani, Maryam; Kato, Hidemi; Kamali-Asl, Alireza; Yashiro, Wataru

2017-06-01

Edge-illumination x-ray phase contrast imaging (EI XPCI) is a non-interferometric phase-sensitive method where two absorption masks are employed. These masks are fabricated through a photolithography process followed by electroplating which is challenging in terms of yield as well as time- and cost-effectiveness. We report on the first implementation of EI XPCI with Pt-based metallic glass masks fabricated by an imprinting method. The new tested alloy exhibits good characteristics including high workability beside high x-ray attenuation. The fabrication process is easy and cheap, and can produce large-size masks for high x-ray energies within minutes. Imaging experiments show a good quality phase image, which confirms the potential of these masks to make the EI XPCI technique widely available and affordable.

Task-Dependent Masked Priming Effects in Visual Word Recognition

PubMed Central

Kinoshita, Sachiko; Norris, Dennis

2012-01-01

A method used widely to study the first 250 ms of visual word recognition is masked priming: These studies have yielded a rich set of data concerning the processes involved in recognizing letters and words. In these studies, there is an implicit assumption that the early processes in word recognition tapped by masked priming are automatic, and masked priming effects should therefore be invariant across tasks. Contrary to this assumption, masked priming effects are modulated by the task goal: For example, only word targets show priming in the lexical decision task, but both words and non-words do in the same-different task; semantic priming effects are generally weak in the lexical decision task but are robust in the semantic categorization task. We explain how such task dependence arises within the Bayesian Reader account of masked priming (Norris and Kinoshita, 2008), and how the task dissociations can be used to understand the early processes in lexical access. PMID:22675316

A hardware architecture for real-time shadow removal in high-contrast video

NASA Astrophysics Data System (ADS)

Verdugo, Pablo; Pezoa, Jorge E.; Figueroa, Miguel

2017-09-01

Broadcasting an outdoor sports event at daytime is a challenging task due to the high contrast that exists between areas in the shadow and light conditions within the same scene. Commercial cameras typically do not handle the high dynamic range of such scenes in a proper manner, resulting in broadcast streams with very little shadow detail. We propose a hardware architecture for real-time shadow removal in high-resolution video, which reduces the shadow effect and simultaneously improves shadow details. The algorithm operates only on the shadow portions of each video frame, thus improving the results and producing more realistic images than algorithms that operate on the entire frame, such as simplified Retinex and histogram shifting. The architecture receives an input in the RGB color space, transforms it into the YIQ space, and uses color information from both spaces to produce a mask of the shadow areas present in the image. The mask is then filtered using a connected components algorithm to eliminate false positives and negatives. The hardware uses pixel information at the edges of the mask to estimate the illumination ratio between light and shadow in the image, which is then used to correct the shadow area. Our prototype implementation simultaneously processes up to 7 video streams of 1920×1080 pixels at 60 frames per second on a Xilinx Kintex-7 XC7K325T FPGA.

Method for the fabrication of three-dimensional microstructures by deep X-ray lithography

DOEpatents

Sweatt, William C.; Christenson, Todd R.

2005-04-05

A method for the fabrication of three-dimensional microstructures by deep X-ray lithography (DXRL) comprises a masking process that uses a patterned mask with inclined mask holes and off-normal exposures with a DXRL beam aligned with the inclined mask holes. Microstructural features that are oriented in different directions can be obtained by using multiple off-normal exposures through additional mask holes having different orientations. Various methods can be used to block the non-aligned mask holes from the beam when using multiple exposures. A method for fabricating a precision 3D X-ray mask comprises forming an intermediate mask and a master mask on a common support membrane.

Cryogenic Etching of High Aspect Ratio 400 nm Pitch Silicon Gratings.

PubMed

Miao, Houxun; Chen, Lei; Mirzaeimoghri, Mona; Kasica, Richard; Wen, Han

2016-10-01

The cryogenic process and Bosch process are two widely used processes for reactive ion etching of high aspect ratio silicon structures. This paper focuses on the cryogenic deep etching of 400 nm pitch silicon gratings with various etching mask materials including polymer, Cr, SiO 2 and Cr-on-polymer. The undercut is found to be the key factor limiting the achievable aspect ratio for the direct hard masks of Cr and SiO 2 , while the etch selectivity responds to the limitation of the polymer mask. The Cr-on-polymer mask provides the same high selectivity as Cr and reduces the excessive undercut introduced by direct hard masks. By optimizing the etching parameters, we etched a 400 nm pitch grating to ≈ 10.6 μ m depth, corresponding to an aspect ratio of ≈ 53.

Dry etching of chrome for photomasks for 100-nm technology using chemically amplified resist

NASA Astrophysics Data System (ADS)

Mueller, Mark; Komarov, Serguie; Baik, Ki-Ho

2002-07-01

Photo mask etching for the 100nm technology node places new requirements on dry etching processes. As the minimum-size features on the mask, such as assist bars and optical proximity correction (OPC) patterns, shrink down to 100nm, it is necessary to produce etch CD biases of below 20nm in order to reproduce minimum resist features into chrome with good pattern fidelity. In addition, vertical profiles are necessary. In previous generations of photomask technology, footing and sidewall profile slope were tolerated, since this dry etch profile was an improvement from wet etching. However, as feature sizes shrink, it is extremely important to select etch processes which do not generate a foot, because this will affect etch linearity and also limit the smallest etched feature size. Chemically amplified resist (CAR) from TOK is patterned with a 50keV MEBES eXara e-beam writer, allowing for patterning of small features with vertical resist profiles. This resist is developed for raster scan 50 kV e-beam systems. It has high contrast, good coating characteristics, good dry etch selectivity, and high environmental stability. Chrome etch process development has been performed using Design of Experiments to optimize parameters such as sidewall profile, etch CD bias, etch CD linearity for varying sizes of line/space patterns, etch CD linearity for varying sizes of isolated lines and spaces, loading effects, and application to contact etching.

Via patterning in the 7-nm node using immersion lithography and graphoepitaxy directed self-assembly

NASA Astrophysics Data System (ADS)

Doise, Jan; Bekaert, Joost; Chan, Boon Teik; Hori, Masafumi; Gronheid, Roel

2017-04-01

Insertion of a graphoepitaxy directed self-assembly process as a via patterning technology into integrated circuit fabrication is seriously considered for the 7-nm node and beyond. At these dimensions, a graphoepitaxy process using a cylindrical block copolymer that enables hole multiplication can alleviate costs by extending 193-nm immersion-based lithography and significantly reducing the number of masks that would be required per layer. To be considered for implementation, it needs to be proved that this approach can achieve the required pattern quality in terms of defects and variability using a representative, aperiodic design. The patterning of a via layer from an actual 7-nm node logic layout is demonstrated using immersion lithography and graphoepitaxy directed self-assembly in a fab-like environment. The performance of the process is characterized in detail on a full 300-mm wafer scale. The local variability in an edge placement error of the obtained patterns (4.0 nm 3σ for singlets) is in line with the recent results in the field and significantly less than of the prepattern (4.9 nm 3σ for singlets). In addition, it is expected that pattern quality can be further improved through an improved mask design and optical proximity correction. No major complications for insertion of the graphoepitaxy directed self-assembly into device manufacturing were observed.

Three-dimensional polarization marked multiple-QR code encryption by optimizing a single vectorial beam

NASA Astrophysics Data System (ADS)

Lin, Chao; Shen, Xueju; Hua, Binbin; Wang, Zhisong

2015-10-01

We demonstrate the feasibility of three dimensional (3D) polarization multiplexing by optimizing a single vectorial beam using a multiple-signal window multiple-plane (MSW-MP) phase retrieval algorithm. Original messages represented with multiple quick response (QR) codes are first partitioned into a series of subblocks. Then, each subblock is marked with a specific polarization state and randomly distributed in 3D space with both longitudinal and transversal adjustable freedoms. A generalized 3D polarization mapping protocol is established to generate a 3D polarization key. Finally, multiple-QR code is encrypted into one phase only mask and one polarization only mask based on the modified Gerchberg-Saxton (GS) algorithm. We take the polarization mask as the cyphertext and the phase only mask as additional dimension of key. Only when both the phase key and 3D polarization key are correct, original messages can be recovered. We verify our proposal with both simulation and experiment evidences.

Model-based assist feature insertion for sub-40nm memory device

NASA Astrophysics Data System (ADS)

Suh, Sungsoo; Lee, Suk-joo; Choi, Seong-woon; Lee, Sung-Woo; Park, Chan-hoon

2009-04-01

Many issues need to be resolved for a production-worthy model based assist feature insertion flow for single and double exposure patterning process to extend low k1 process at 193 nm immersion technology. Model based assist feature insertion is not trivial to implement either for single and double exposure patterning compared to rule based methods. As shown in Fig. 1, pixel based mask inversion technology in itself has difficulties in mask writing and inspection although it presents as one of key technology to extend single exposure for contact layer. Thus far, inversion technology is tried as a cooptimization of target mask to simultaneously generate optimized main and sub-resolution assists features for a desired process window. Alternatively, its technology can also be used to optimize for a target feature after an assist feature types are inserted in order to simplify the mask complexity. Simplification of inversion mask is one of major issue with applying inversion technology to device development even if a smaller mask feature can be fabricated since the mask writing time is also a major factor. As shown in Figure 2, mask writing time may be a limiting factor in determining whether or not an inversion solution is viable. It can be reasoned that increased number of shot counts relates to increase in margin for inversion methodology. On the other hand, there is a limit on how complex a mask can be in order to be production worthy. There is also source and mask co-optimization which influences the final mask patterns and assist feature sizes and positions for a given target. In this study, we will discuss assist feature insertion methods for sub 40-nm technology.

The Q Continuum: Encounter with the Cloud Mask

NASA Astrophysics Data System (ADS)

Ackerman, S. A.; Frey, R.; Holz, R.; Philips, C.; Dutcher, S.

2017-12-01

We are developing a common cloud mask for MODIS and VIIRS observations, referred to as the MODIS VIIRS Continuity Mask (MVCM). Our focus is on extending the MODIS-heritage cloud detection approach in order to generate appropriate climate data records for clouds and climate studies. The MVCM is based on heritage from the MODIS cloud mask (MOD35 and MYD35) and employs a series of tests on MODIS reflectances and brightness temperatures. Cloud detection is based on contrasts (i.e., cloud versus background surface) at pixel resolution. The MVCM follows the same approach. These cloud masks use multiple cloud detection tests to indicate the confidence level that the observation is of a clear-sky scene. The outcome of a test ranges from 0 (cloudy) to 1 (clear-sky scene). Because of overlap in the sensitivities of the various spectral tests to the type of cloud, each test is considered in one of several groups. The final cloud mask is determined from the product of the minimum confidence of each group and is referred to as the Q value as defined in Ackerman et al (1998). In MOD35 and MYD35 processing, the Q value is not output, rather predetermined Q values determine the result: If Q ≥ .99 the scene is clear; .95 ≤ Q < .99 the pixel is probably a clear scene, .66 ≤ Q < .95 is probably cloudy and Q < .66 is cloudy. Thus representing Q discretely and not as a continuum. For the MVCM, the numerical value of the Q is output along with the classification of clear, probably clear, probably cloudy, and cloudy. Through comparisons with collocated CALIOP and MODIS observations, we will assess the categorization of the Q values as a function of scene type ). While validation studies have indicated the utility and statistical correctness of the cloud mask approach, the algorithm does not possess immeasurable power and perfection. This comparison will assess the time and space dependence of Q and assure that the laws of physics are followed, at least according to normal human notions. Using CALIOP as representing truth, a receiver operating characteristic curve (ROC) will be analyzed to determine the optimum Q for various scenes and seasons, thus providing a continuum of discriminating thresholds.

Effects of hard mask etch on final topography of advanced phase shift masks

NASA Astrophysics Data System (ADS)

Hortenbach, Olga; Rolff, Haiko; Lajn, Alexander; Baessler, Martin

2017-07-01

Continuous shrinking of the semiconductor device dimensions demands steady improvements of the lithographic resolution on wafer level. These requirements challenge the photomask industry to further improve the mask quality in all relevant printing characteristics. In this paper topography of the Phase Shift Masks (PSM) was investigated. Effects of hard mask etch on phase shift uniformity and mask absorber profile were studied. Design of experiments method (DoE) was used for the process optimization, whereas gas composition, bias power of the hard mask main etch and bias power of the over-etch were varied. In addition, influence of the over-etch time was examined at the end of the experiment. Absorber depth uniformity, sidewall angle (SWA), reactive ion etch lag (RIE lag) and through pitch (TP) dependence were analyzed. Measurements were performed by means of Atomic-force microscopy (AFM) using critical dimension (CD) mode with a boot-shaped tip. Scanning electron microscope (SEM) cross-section images were prepared to verify the profile quality. Finally CD analysis was performed to confirm the optimal etch conditions. Significant dependence of the absorber SWA on hard mask (HM) etch conditions was observed revealing an improvement potential for the mask absorber profile. It was found that hard mask etch can leave a depth footprint in the absorber layer. Thus, the etch depth uniformity of hard mask etch is crucial for achieving a uniform phase shift over the active mask area. The optimized hard mask etch process results in significantly improved mask topography without deterioration of tight CD specifications.

Application of multi-tone mask technology in photolithographic fabrication of color filter components in LCD

NASA Astrophysics Data System (ADS)

Takada, Yoshihiro; Fukui, Matoko; Sai, Tsunehiro

2008-11-01

Recent progresses in the photoresists and photolithography for LCD industry applications have been primarily driven by the following two factors: advancement in the material performances (high resolution, high contrast ratio, low dielectric constant) for higher display quality, and cost reduction in the fabrication process. Along with crucial demand for cost competitiveness by improving production efficiency, environmental consciousness has been a major priority at fabrication process design to minimize the amount of waste produced. Having said the above, integration of two or more fabrication processes into a single process by using multi-tone mask technology has been the interest of research, due to its obvious advantage of reducing fabrication processes and cost. For example, multi-tone mask technology application has been widely employed on the TFT side to reduce the different types of photomasks being used. Similar trend has been employed on the CF side as well, where application of multi-tone mask technology is being investigated to integrate fabrication of multiple CF micro-components into a single process. In this presentation, we demonstrate a new approach of fabricating photospacer and peripheral CF components (MVA protrusion, sub-photospacers) in a single integrated process through multi-tone mask technology.

Film loss-free cleaning chemicals for EUV mask lifetime elongation developed through combinatorial chemical screening

NASA Astrophysics Data System (ADS)

Choi, Jaehyuck; Kim, Jinsu; Lowe, Jeff; Dattilo, Davide; Koh, Soowan; Choi, Jun Yeol; Dietze, Uwe; Shoki, Tsutomu; Kim, Byung Gook; Jeon, Chan-Uk

2015-10-01

EUV masks include many different layers of various materials rarely used in optical masks, and each layer of material has a particular role in enhancing the performance of EUV lithography. Therefore, it is crucial to understand how the mask quality and patterning performance can change during mask fabrication, EUV exposure, maintenance cleaning, shipping, or storage. SPM (Sulfuric acid peroxide mixture) which has been extensively used for acid cleaning of photomask and wafer has serious drawback for EUV mask cleaning. It shows severe film loss of tantalum-based absorber layers and limited removal efficiency of EUV-generated carbon contaminants on EUV mask surface. Here, we introduce such novel cleaning chemicals developed for EUV mask as almost film loss free for various layers of the mask and superior carbon removal performance. Combinatorial chemical screening methods allowed us to screen several hundred combinations of various chemistries and additives under several different process conditions of temperature and time, eventually leading to development of the best chemistry selections for EUV mask cleaning. Recently, there have been many activities for the development of EUV pellicle, driven by ASML and core EUV scanner customer companies. It is still important to obtain film-loss free cleaning chemicals because cleaning cycle of EUV mask should be much faster than that of optic mask mainly due to EUV pellicle lifetime. More frequent cleaning, combined with the adoption of new materials for EUV masks, necessitates that mask manufacturers closely examine the performance change of EUV masks during cleaning process. We have investigated EUV mask quality changes and film losses during 50 cleaning cycles using new chemicals as well as particle and carbon contaminant removal characteristics. We have observed that the performance of new chemicals developed is superior to current SPM or relevant cleaning chemicals for EUV mask cleaning and EUV mask lifetime elongation.

Flat-Sky Pseudo-Cls Analysis for Weak Gravitational Lensing

NASA Astrophysics Data System (ADS)

Asgari, Marika; Taylor, Andy; Joachimi, Benjamin; Kitching, Thomas D.

2018-05-01

We investigate the use of estimators of weak lensing power spectra based on a flat-sky implementation of the 'Pseudo-CI' (PCl) technique, where the masked shear field is transformed without regard for masked regions of sky. This masking mixes power, and 'E'-convergence and 'B'-modes. To study the accuracy of forward-modelling and full-sky power spectrum recovery we consider both large-area survey geometries, and small-scale masking due to stars and a checkerboard model for field-of-view gaps. The power spectrum for the large-area survey geometry is sparsely-sampled and highly oscillatory, which makes modelling problematic. Instead, we derive an overall calibration for large-area mask bias using simulated fields. The effects of small-area star masks can be accurately corrected for, while the checkerboard mask has oscillatory and spiky behaviour which leads to percent biases. Apodisation of the masked fields leads to increased biases and a loss of information. We find that we can construct an unbiased forward-model of the raw PCls, and recover the full-sky convergence power to within a few percent accuracy for both Gaussian and lognormal-distributed shear fields. Propagating this through to cosmological parameters using a Fisher-Matrix formalism, we find we can make unbiased estimates of parameters for surveys up to 1,200 deg2 with 30 galaxies per arcmin2, beyond which the percent biases become larger than the statistical accuracy. This implies a flat-sky PCl analysis is accurate for current surveys but a Euclid-like survey will require higher accuracy.

Effects of degraded sensory input on memory for speech: behavioral data and a test of biologically constrained computational models.

PubMed

Piquado, Tepring; Cousins, Katheryn A Q; Wingfield, Arthur; Miller, Paul

2010-12-13

Poor hearing acuity reduces memory for spoken words, even when the words are presented with enough clarity for correct recognition. An "effortful hypothesis" suggests that the perceptual effort needed for recognition draws from resources that would otherwise be available for encoding the word in memory. To assess this hypothesis, we conducted a behavioral task requiring immediate free recall of word-lists, some of which contained an acoustically masked word that was just above perceptual threshold. Results show that masking a word reduces the recall of that word and words prior to it, as well as weakening the linking associations between the masked and prior words. In contrast, recall probabilities of words following the masked word are not affected. To account for this effect we conducted computational simulations testing two classes of models: Associative Linking Models and Short-Term Memory Buffer Models. Only a model that integrated both contextual linking and buffer components matched all of the effects of masking observed in our behavioral data. In this Linking-Buffer Model, the masked word disrupts a short-term memory buffer, causing associative links of words in the buffer to be weakened, affecting memory for the masked word and the word prior to it, while allowing links of words following the masked word to be spared. We suggest that these data account for the so-called "effortful hypothesis", where distorted input has a detrimental impact on prior information stored in short-term memory. Copyright © 2010 Elsevier B.V. All rights reserved.

Process optimization for particle removal on blank chrome mask plates in preparation for resist application

NASA Astrophysics Data System (ADS)

Osborne, Stephen; Smith, Eryn; Woster, Eric; Pelayo, Anthony

2002-03-01

As integrated circuits require smaller lines to provide the memory and processing capability for tomorrow's marketplace, the photomask industry is adopting higher contrast resists to improve photomask lithography. Photomask yield for several high-contrast resist recipes may be improved by coating masks at the mask shop. When coating at a mask shop, an effective method is available that uses coat/bake cluster tools to ensure blanks are clean prior to coating. Many high-contrast resists are available, and some are more susceptible to time-dependent performance factors than conventional resists. One of these factors is the time between coating and writing. Although future methods may reduce the impact of this factor, one current trend is to reduce this time by coating plates at the mask shop just prior to writing. Establishing an effective process to clean blanks prior to coating is necessary for product quality control and is a new task that is critical for maskmakers who previously purchased mask plates but have decided to begin coating them within their facility. This paper provides a strategy and method to be used within coat/bake cluster tools to remove particle contamination from mask blanks. The process uses excimer-UV ionizing radiation and ozone to remove organic contaminants, and then uses a wet process combined with megasonic agitation, surfactant, and spin forces. Megasonic agitation with surfactant lifts up particles, while the convective outflow of water enhances centripetal shear without accumulating harmful charge.

A pattern-based method to automate mask inspection files

NASA Astrophysics Data System (ADS)

Kamal Baharin, Ezni Aznida Binti; Muhsain, Mohamad Fahmi Bin; Ahmad Ibrahim, Muhamad Asraf Bin; Ahmad Noorhani, Ahmad Nurul Ihsan Bin; Sweis, Jason; Lai, Ya-Chieh; Hurat, Philippe

2017-03-01

Mask inspection is a critical step in the mask manufacturing process in order to ensure all dimensions printed are within the needed tolerances. This becomes even more challenging as the device nodes shrink and the complexity of the tapeout increases. Thus, the amount of measurement points and their critical dimension (CD) types are increasing to ensure the quality of the mask. In addition to the mask quality, there is a significant amount of manpower needed when the preparation and debugging of this process are not automated. By utilizing a novel pattern search technology with the ability to measure and report match region scan-line (edge) measurements, we can create a flow to find, measure and mark all metrology locations of interest and provide this automated report to the mask shop for inspection. A digital library is created based on the technology product and node which contains the test patterns to be measured. This paper will discuss how these digital libraries will be generated and then utilized. As a time-critical part of the manufacturing process, this can also reduce the data preparation cycle time, minimize the amount of manual/human error in naming and measuring the various locations, reduce the risk of wrong/missing CD locations, and reduce the amount of manpower needed overall. We will also review an example pattern and how the reporting structure to the mask shop can be processed. This entire process can now be fully automated.

The Effect Of Digital Unsharp Masking On The Detectability Of Interstitial Infiltrates And Pneumothoraces

NASA Astrophysics Data System (ADS)

MacMahon, Heber; Vyborny, Carl; Sabeti, Victoria; Metz, Charles; Doi, Kunio

1985-09-01

A potential advantage of digital radiographic systems is their ability to enhance images by various types of processing. Digital unsharp masking is one of the simplest and potentially most useful forms of enhancement. The efficacy of unsharp masking in clinical radiologic diagnosis has not been investigated systematically, however. The effect of digital unsharp masking on the detectability of two types of subtle abnormalities, pneumothorax and interstitial infiltrate, was studied in an observer performance test. An ROC analysis of this preliminary data suggests that unsharp masking may improve diagnostic accuracy for pneumothorax. Radiologists' performance in identifying interstitial infiltrates was degraded by the image processing, however, and false positive diagnoses tended to be more frequent.

Advanced refractory-metal and process technology for the fabrication of x-ray masks

NASA Astrophysics Data System (ADS)

Brooks, Cameron J.; Racette, Kenneth C.; Lercel, Michael J.; Powers, Lynn A.; Benoit, Douglas E.

1999-06-01

This paper provides an in-depth report of the advanced materials and process technology being developed for x-ray mask manufacturing at IBM. Masks using diamond membranes as replacement for silicon carbide are currently being fabricated. Alternate tantalum-based absorbers, such as tantalum boron, which offer improved etch resolution and critical dimension control, as well as higher x-ray absorption, are also being investigated. In addition to the absorber studies, the development of conductive chromium- based hard-mask films to replace the current silicon oxynitride layer is being explored. The progress of this advanced-materials work, which includes significant enhancements to x-ray mask image-placement performance, will be outlined.

Real-Time Implementation of Nonlinear Processing Functions.

DTIC Science & Technology

1981-08-01

crystal devices and then to use them in a coherent optical data- processing apparatus using halftone masks custom designed at the University oi Southern...California. With the halftone mask technique, we have demonstrated logarithmic nonlinear transformation, allowing us to separate multiplicative images...improved.,_ This device allowed nonlinear functions to be implemented directly wit - out the need for specially made halftone masks. Besides

Determining the energetic and informational components of speech-on-speech masking

PubMed Central

Kidd, Gerald; Mason, Christine R.; Swaminathan, Jayaganesh; Roverud, Elin; Clayton, Kameron K.; Best, Virginia

2016-01-01

Identification of target speech was studied under masked conditions consisting of two or four independent speech maskers. In the reference conditions, the maskers were colocated with the target, the masker talkers were the same sex as the target, and the masker speech was intelligible. The comparison conditions, intended to provide release from masking, included different-sex target and masker talkers, time-reversal of the masker speech, and spatial separation of the maskers from the target. Significant release from masking was found for all comparison conditions. To determine whether these reductions in masking could be attributed to differences in energetic masking, ideal time-frequency segregation (ITFS) processing was applied so that the time-frequency units where the masker energy dominated the target energy were removed. The remaining target-dominated “glimpses” were reassembled as the stimulus. Speech reception thresholds measured using these resynthesized ITFS-processed stimuli were the same for the reference and comparison conditions supporting the conclusion that the amount of energetic masking across conditions was the same. These results indicated that the large release from masking found under all comparison conditions was due primarily to a reduction in informational masking. Furthermore, the large individual differences observed generally were correlated across the three masking release conditions. PMID:27475139

Automated imprint mask cleaning for step-and-flash imprint lithography

NASA Astrophysics Data System (ADS)

Singh, Sherjang; Chen, Ssuwei; Selinidis, Kosta; Fletcher, Brian; McMackin, Ian; Thompson, Ecron; Resnick, Douglas J.; Dress, Peter; Dietze, Uwe

2009-03-01

Step-and-Flash Imprint Lithography (S-FIL) is a promising lithography strategy for semiconductor manufacturing at device nodes below 32nm. The S-FIL 1:1 pattern transfer technology utilizes a field-by-field ink jet dispense of a low viscosity liquid resist to fill the relief pattern of the device layer etched into the glass mask. Compared to other sub 40nm CD lithography methods, the resulting high resolution, high throughput through clustering, 3D patterning capability, low process complexity, and low cost of ownership (CoO) of S-FIL makes it a widely accepted technology for patterned media as well as a promising mainstream option for future CMOS applications. Preservation of mask cleanliness is essential to avoid risk of repeated printing of defects. The development of mask cleaning processes capable of removing particles adhered to the mask surface without damaging the mask is critical to meet high volume manufacturing requirements. In this paper we have presented various methods of residual (cross-linked) resist removal and final imprint mask cleaning demonstrated on the HamaTech MaskTrack automated mask cleaning system. Conventional and non-conventional (acid free) methods of particle removal have been compared and the effect of mask cleaning on pattern damage and CD integrity is also studied.

Reticles, write time, and the need for speed

NASA Astrophysics Data System (ADS)

Ackmann, Paul W.; Litt, Lloyd C.; Ning, Guo Xiang

2014-10-01

Historical data indicates reticle write times are increasing node-to-node. The cost of mask sets is increasing driven by the tighter requirements and more levels. The regular introduction of new generations of mask patterning tools with improved performance is unable to fully compensate for the increased data and complexity required. Write time is a primary metric that drives mask fabrication speed. Design (Raw data) is only the first step in the process and many interactions between mask and wafer technology such as OPC used, OPC efficiency for writers, fracture engines, and actual field size used drive total write time. Yield, technology, and inspection rules drive the remaining raw cycle time. Yield can be even more critical for speed of delivery as it drives re-writes and wasted time. While intrinsic process yield is important, repair capability is the reason mask delivery is still able to deliver 100% good reticles to the fab. Advanced nodes utilizing several layers of multiple patterning may require mask writer tool dedication to meet image placement specifications. This will increase the effective mask cycle time for a layer mask set and drive the need for additional mask write capability in order to deliver masks at the rate required by the wafer fab production schedules.

Mask replication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Selinidis, Kosta S.; Jones, Chris; Doyle, Gary F.; Brown, Laura; Imhof, Joseph; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

2011-11-01

The Jet and Flash Imprint Lithography (J-FILTM) process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105imprints. This suggests that tens of thousands of templates/masks will be required to satisfy the needs of a manufacturing environment. Electron-beam patterning is too slow to feasibly deliver these volumes, but instead can provide a high quality "master" mask which can be replicated many times with an imprint lithography tool. This strategy has the capability to produce the required supply of "working" templates/masks. In this paper, we review the development of the mask form factor, imprint replication tools and the semiconductor mask replication process. A PerfectaTM MR5000 mask replication tool has been developed specifically to pattern replica masks from an ebeam written master. Performance results, including image placement, critical dimension uniformity, and pattern transfer are covered in detail.

Listening to Sentences in Noise: Revealing Binaural Hearing Challenges in Patients with Schizophrenia.

PubMed

Abdul Wahab, Noor Alaudin; Zakaria, Mohd Normani; Abdul Rahman, Abdul Hamid; Sidek, Dinsuhaimi; Wahab, Suzaily

2017-11-01

The present, case-control, study investigates binaural hearing performance in schizophrenia patients towards sentences presented in quiet and noise. Participants were twenty-one healthy controls and sixteen schizophrenia patients with normal peripheral auditory functions. The binaural hearing was examined in four listening conditions by using the Malay version of hearing in noise test. The syntactically and semantically correct sentences were presented via headphones to the randomly selected subjects. In each condition, the adaptively obtained reception thresholds for speech (RTS) were used to determine RTS noise composite and spatial release from masking. Schizophrenia patients demonstrated significantly higher mean RTS value relative to healthy controls (p=0.018). The large effect size found in three listening conditions, i.e., in quiet (d=1.07), noise right (d=0.88) and noise composite (d=0.90) indicates statistically significant difference between the groups. However, noise front and noise left conditions show medium (d=0.61) and small (d=0.50) effect size respectively. No statistical difference between groups was noted in regards to spatial release from masking on right (p=0.305) and left (p=0.970) ear. The present findings suggest an abnormal unilateral auditory processing in central auditory pathway in schizophrenia patients. Future studies to explore the role of binaural and spatial auditory processing were recommended.

Spectral narrowing of a 980 nm tapered diode laser bar

NASA Astrophysics Data System (ADS)

Vijayakumar, Deepak; Jensen, Ole Bjarlin; Lucas Leclin, Ga"lle; Petersen, Paul Michael; Thestrup, Birgitte

2011-03-01

High power diode laser bars are interesting in many applications such as solid state laser pumping, material processing, laser trapping, laser cooling and second harmonic generation. Often, the free running laser bars emit a broad spectrum of the order of several nanometres which limit their scope in wavelength specific applications and hence, it is vital to stabilize the emission spectrum of these devices. In our experiment, we describe the wavelength narrowing of a 12 element 980 nm tapered diode laser bar using a simple Littman configuration. The tapered laser bar which suffered from a big smile has been "smile corrected" using individual phase masks for each emitter. The external cavity consists of the laser bar, both fast and slow axis micro collimators, smile correcting phase mask, 6.5x beam expanding lens combination, a 1200 lines/mm reflecting grating with 85% efficiency in the first order, a slow axis focusing cylindrical lens of 40 mm focal length and an output coupler which is 10% reflective. In the free running mode, the laser emission spectrum was 5.5 nm wide at an operating current of 30A. The output power was measured to be in excess of 12W. Under the external cavity operation, the wavelength spread of the laser could be limited to 0.04 nm with an output power in excess of 8 W at an operating current of 30A. The spectrum was found to be tuneable in a range of 16 nm.

Understanding and reduction of defects on finished EUV masks

NASA Astrophysics Data System (ADS)

Liang, Ted; Sanchez, Peter; Zhang, Guojing; Shu, Emily; Nagpal, Rajesh; Stivers, Alan

2005-05-01

To reduce the risk of EUV lithography adaptation for the 32nm technology node in 2009, Intel has operated a EUV mask Pilot Line since early 2004. The Pilot Line integrates all the necessary process modules including common tool sets shared with current photomask production as well as EUV specific tools. This integrated endeavor ensures a comprehensive understanding of any issues, and development of solutions for the eventual fabrication of defect-free EUV masks. Two enabling modules for "defect-free" masks are pattern inspection and repair, which have been integrated into the Pilot Line. This is the first time we are able to look at real defects originated from multilayer blanks and patterning process on finished masks over entire mask area. In this paper, we describe our efforts in the qualification of DUV pattern inspection and electron beam mask repair tools for Pilot Line operation, including inspection tool sensitivity, defect classification and characterization, and defect repair. We will discuss the origins of each of the five classes of defects as seen by DUV pattern inspection tool on finished masks, and present solutions of eliminating and mitigating them.

Improved superficial brain hemorrhage visualization in susceptibility weighted images by constrained minimum intensity projection

NASA Astrophysics Data System (ADS)

Castro, Marcelo A.; Pham, Dzung L.; Butman, John

2016-03-01

Minimum intensity projection is a technique commonly used to display magnetic resonance susceptibility weighted images, allowing the observer to better visualize hemorrhages and vasculature. The technique displays the minimum intensity in a given projection within a thick slab, allowing different connectivity patterns to be easily revealed. Unfortunately, the low signal intensity of the skull within the thick slab can mask superficial tissues near the skull base and other regions. Because superficial microhemorrhages are a common feature of traumatic brain injury, this effect limits the ability to proper diagnose and follow up patients. In order to overcome this limitation, we developed a method to allow minimum intensity projection to properly display superficial tissues adjacent to the skull. Our approach is based on two brain masks, the largest of which includes extracerebral voxels. The analysis of the rind within both masks containing the actual brain boundary allows reclassification of those voxels initially missed in the smaller mask. Morphological operations are applied to guarantee accuracy and topological correctness, and the mean intensity within the mask is assigned to all outer voxels. This prevents bone from dominating superficial regions in the projection, enabling superior visualization of cortical hemorrhages and vessels.

The role of edge-based and surface-based information in natural scene categorization: Evidence from behavior and event-related potentials.

PubMed

Fu, Qiufang; Liu, Yong-Jin; Dienes, Zoltan; Wu, Jianhui; Chen, Wenfeng; Fu, Xiaolan

2016-07-01

A fundamental question in vision research is whether visual recognition is determined by edge-based information (e.g., edge, line, and conjunction) or surface-based information (e.g., color, brightness, and texture). To investigate this question, we manipulated the stimulus onset asynchrony (SOA) between the scene and the mask in a backward masking task of natural scene categorization. The behavioral results showed that correct classification was higher for line-drawings than for color photographs when the SOA was 13ms, but lower when the SOA was longer. The ERP results revealed that most latencies of early components were shorter for the line-drawings than for the color photographs, and the latencies gradually increased with the SOA for the color photographs but not for the line-drawings. The results provide new evidence that edge-based information is the primary determinant of natural scene categorization, receiving priority processing; by contrast, surface information takes longer to facilitate natural scene categorization. Copyright © 2016 Elsevier Inc. All rights reserved.

Remote sensing change detection methods to track deforestation and growth in threatened rainforests in Madre de Dios, Peru

USGS Publications Warehouse

Shermeyer, Jacob S.; Haack, Barry N.

2015-01-01

Two forestry-change detection methods are described, compared, and contrasted for estimating deforestation and growth in threatened forests in southern Peru from 2000 to 2010. The methods used in this study rely on freely available data, including atmospherically corrected Landsat 5 Thematic Mapper and Moderate Resolution Imaging Spectroradiometer (MODIS) vegetation continuous fields (VCF). The two methods include a conventional supervised signature extraction method and a unique self-calibrating method called MODIS VCF guided forest/nonforest (FNF) masking. The process chain for each of these methods includes a threshold classification of MODIS VCF, training data or signature extraction, signature evaluation, k-nearest neighbor classification, analyst-guided reclassification, and postclassification image differencing to generate forest change maps. Comparisons of all methods were based on an accuracy assessment using 500 validation pixels. Results of this accuracy assessment indicate that FNF masking had a 5% higher overall accuracy and was superior to conventional supervised classification when estimating forest change. Both methods succeeded in classifying persistently forested and nonforested areas, and both had limitations when classifying forest change.

Nanoimprint system development and status for high volume semiconductor manufacturing

NASA Astrophysics Data System (ADS)

Hiura, Hiromi; Takabayashi, Yukio; Takashima, Tsuneo; Emoto, Keiji; Choi, Jin; Schumaker, Phil

2016-10-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash Imprint Lithography* (J-FIL*) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. There are many criteria that determine whether a particular technology is ready for wafer manufacturing. For imprint lithography, recent attention has been given to the areas of overlay, throughput, defectivity, and mask replication. This paper reviews progress in these critical areas. Recent demonstrations have proven that mix and match overlay of less than 5nm can achieved. Further reductions require a higher order correction system. Modeling and experimental data are presented which provide a path towards reducing the overlay errors to less than 3nm. Throughput is mainly impacted by the fill time of the relief images on the mask. Improvement in resist materials provides a solution that allows 15 wafers per hour per station, or a tool throughput of 60 wafers per hour. Defectivity and mask life play a significant role relative to meeting the cost of ownership (CoO) requirements in the production of semiconductor devices. Hard particles on a wafer or mask create the possibility of inducing a permanent defect on the mask that can impact device yield and mask life. By using material methods to reduce particle shedding and by introducing an air curtain system, the lifetime of both the master mask and the replica mask can be extended. In this work, we report results that demonstrate a path towards achieving mask lifetimes of better than 1000 wafers. Finally, on the mask side, a new replication tool, the FPA-1100NR2 is introduced. Mask replication is required for nanoimprint lithography (NIL), and criteria that are crucial to the success of a replication platform include both particle control and IP accuracy. In particular, by improving the specifications on the mask chuck, residual errors of only 1nm can be realized.

Gestalt grouping and common onset masking.

PubMed

Kahan, Todd A; Mathis, Katherine M

2002-11-01

A four-dot mask that surrounds and is presented simultaneously with a briefly presented target will reduce a person's ability to identity that target if the mask persists beyond target offset and attention is divided (Enns & Di Lollo, 1997, 2000). This masking effect, referred to as common onset masking, reflects reentrant processing in the visual system and can best be explained with a theory of object substitution (Di Lollo, Enns, & Rensink, 2000). In the present experiments, we investigated whether Gestalt grouping variables would influence the strength of common onset masking. The results indicated that (1) masking was impervious to grouping by form, similarity of color, position, luminance polarity, and common region and (2) masking increased with the number of elements in the masking display.

Improved line-end foreshortening and corner-rounding control in optical proximity correction using radius of curvature method

NASA Astrophysics Data System (ADS)

Mukherjee, Maharaj; Phan, Vinhthuy

2002-07-01

We describe how to generate better Optical Proximity Corrections (OPC) for line-ends and corners by using rounded anchors and serifs. These rounded serifs and anchors can be made smaller in size and shape than the traditional rectilinear anchors and serifs. The smaller size of the serifs tend to have less problems in satisfying mask-rule constraints. They also have less adverse effects on the printability of neighboring shapes. We refer to these rounded anchors and serifs as Mouse-Ears. The rounding is done by circles which are regular octagons with Ortho-45 straight lines. The main idea of this paper stems from the physical description of the lithographic process, which can be conceptualized as a low-pass filter. The low-pass filter eliminates the sharp corners of the feature which are made of high spatial-frequency components and retains the low spatial-frequency components. Since the rounded anchors and serifs have fewer high-frequency components than their rectilinear counterparts they get less deformed in the lithographic process.

Anticipating and controlling mask costs within EDA physical design

NASA Astrophysics Data System (ADS)

Rieger, Michael L.; Mayhew, Jeffrey P.; Melvin, Lawrence S.; Lugg, Robert M.; Beale, Daniel F.

2003-08-01

For low k1 lithography, more aggressive OPC is being applied to critical layers, and the number of mask layers with OPC treatments is growing rapidly. The 130 nm, process node required, on average, 8 layers containing rules- or model-based OPC. The 90 nm node will have 16 OPC layers, of which 14 layers contain aggressive model-based OPC. This escalation of mask pattern complexity, coupled with the predominant use of vector-scan e-beam (VSB) mask writers contributes to the rising costs of advanced mask sets. Writing times for OPC layouts are several times longer than for traditional layouts, making mask exposure the single largest cost component for OPC masks. Lower mask yields, another key factor in higher mask costs, is also aggravated by OPC. Historical mask set costs are plotted below. The initial cost of a 90 nm-node mask set will exceed one million dollars. The relative impact of mask cost on chip depends on how many total wafers are printed with each mask set. For many foundry chips, where unit production is often well below 1000 wafers, mask costs are larger than wafer processing costs. Further increases in NRE may begin to discourage these suppliers' adoption to 90 nm and smaller nodes. In this paper we will outline several alternatives for reducing mask costs by strategically leveraging dimensional margins. Dimensional specifications for a particular masking layer usually are applied uniformly to all features on that layer. As a practical matter, accuracy requirements on different features in the design may vary widely. Take a polysilicon layer, for example: global tolerance specifications for that layer are driven by the transistor-gate requirements; but these parameters over-specify interconnect feature requirements. By identifying features where dimensional accuracy requirements can be reduced, additional margin can be leveraged to reduce OPC complexity. Mask writing time on VSB tools will drop in nearly direct proportion to reduce shot count. By inspecting masks with reference to feature-dependent margins, instead of uniform specifications, mask yield can be effectively increased further reducing delivered mask expense.

Real-space post-processing correction of thermal drift and piezoelectric actuator nonlinearities in scanning tunneling microscope images.

PubMed

Yothers, Mitchell P; Browder, Aaron E; Bumm, Lloyd A

2017-01-01

We have developed a real-space method to correct distortion due to thermal drift and piezoelectric actuator nonlinearities on scanning tunneling microscope images using Matlab. The method uses the known structures typically present in high-resolution atomic and molecularly resolved images as an internal standard. Each image feature (atom or molecule) is first identified in the image. The locations of each feature's nearest neighbors are used to measure the local distortion at that location. The local distortion map across the image is simultaneously fit to our distortion model, which includes thermal drift in addition to piezoelectric actuator hysteresis and creep. The image coordinates of the features and image pixels are corrected using an inverse transform from the distortion model. We call this technique the thermal-drift, hysteresis, and creep transform. Performing the correction in real space allows defects, domain boundaries, and step edges to be excluded with a spatial mask. Additional real-space image analyses are now possible with these corrected images. Using graphite(0001) as a model system, we show lattice fitting to the corrected image, averaged unit cell images, and symmetry-averaged unit cell images. Statistical analysis of the distribution of the image features around their best-fit lattice sites measures the aggregate noise in the image, which can be expressed as feature confidence ellipsoids.

Real-space post-processing correction of thermal drift and piezoelectric actuator nonlinearities in scanning tunneling microscope images

NASA Astrophysics Data System (ADS)

Yothers, Mitchell P.; Browder, Aaron E.; Bumm, Lloyd A.

2017-01-01

We have developed a real-space method to correct distortion due to thermal drift and piezoelectric actuator nonlinearities on scanning tunneling microscope images using Matlab. The method uses the known structures typically present in high-resolution atomic and molecularly resolved images as an internal standard. Each image feature (atom or molecule) is first identified in the image. The locations of each feature's nearest neighbors are used to measure the local distortion at that location. The local distortion map across the image is simultaneously fit to our distortion model, which includes thermal drift in addition to piezoelectric actuator hysteresis and creep. The image coordinates of the features and image pixels are corrected using an inverse transform from the distortion model. We call this technique the thermal-drift, hysteresis, and creep transform. Performing the correction in real space allows defects, domain boundaries, and step edges to be excluded with a spatial mask. Additional real-space image analyses are now possible with these corrected images. Using graphite(0001) as a model system, we show lattice fitting to the corrected image, averaged unit cell images, and symmetry-averaged unit cell images. Statistical analysis of the distribution of the image features around their best-fit lattice sites measures the aggregate noise in the image, which can be expressed as feature confidence ellipsoids.

Automated hotspot analysis with aerial image CD metrology for advanced logic devices

NASA Astrophysics Data System (ADS)

Buttgereit, Ute; Trautzsch, Thomas; Kim, Min-ho; Seo, Jung-Uk; Yoon, Young-Keun; Han, Hak-Seung; Chung, Dong Hoon; Jeon, Chan-Uk; Meyers, Gary

2014-09-01

Continuously shrinking designs by further extension of 193nm technology lead to a much higher probability of hotspots especially for the manufacturing of advanced logic devices. The CD of these potential hotspots needs to be precisely controlled and measured on the mask. On top of that, the feature complexity increases due to high OPC load in the logic mask design which is an additional challenge for CD metrology. Therefore the hotspot measurements have been performed on WLCD from ZEISS, which provides the benefit of reduced complexity by measuring the CD in the aerial image and qualifying the printing relevant CD. This is especially of advantage for complex 2D feature measurements. Additionally, the data preparation for CD measurement becomes more critical due to the larger amount of CD measurements and the increasing feature diversity. For the data preparation this means to identify these hotspots and mark them automatically with the correct marker required to make the feature specific CD measurement successful. Currently available methods can address generic pattern but cannot deal with the pattern diversity of the hotspots. The paper will explore a method how to overcome those limitations and to enhance the time-to-result in the marking process dramatically. For the marking process the Synopsys WLCD Output Module was utilized, which is an interface between the CATS mask data prep software and the WLCD metrology tool. It translates the CATS marking directly into an executable WLCD measurement job including CD analysis. The paper will describe the utilized method and flow for the hotspot measurement. Additionally, the achieved results on hotspot measurements utilizing this method will be presented.

Lithographic image simulation for the 21st century with 19th-century tools

NASA Astrophysics Data System (ADS)

Gordon, Ronald L.; Rosenbluth, Alan E.

2004-01-01

Simulation of lithographic processes in semiconductor manufacturing has gone from a crude learning tool 20 years ago to a critical part of yield enhancement strategy today. Although many disparate models, championed by equally disparate communities, exist to describe various photoresist development phenomena, these communities would all agree that the one piece of the simulation picture that can, and must, be computed accurately is the image intensity in the photoresist. The imaging of a photomask onto a thin-film stack is one of the only phenomena in the lithographic process that is described fully by well-known, definitive physical laws. Although many approximations are made in the derivation of the Fourier transform relations between the mask object, the pupil, and the image, these and their impacts are well-understood and need little further investigation. The imaging process in optical lithography is modeled as a partially-coherent, Kohler illumination system. As Hopkins has shown, we can separate the computation into 2 pieces: one that takes information about the illumination source, the projection lens pupil, the resist stack, and the mask size or pitch, and the other that only needs the details of the mask structure. As the latter piece of the calculation can be expressed as a fast Fourier transform, it is the first piece that dominates. This piece involves computation of a potentially large number of numbers called Transmission Cross-Coefficients (TCCs), which are correlations of the pupil function weighted with the illumination intensity distribution. The advantage of performing the image calculations this way is that the computation of these TCCs represents an up-front cost, not to be repeated if one is only interested in changing the mask features, which is the case in Model-Based Optical Proximity Correction (MBOPC). The down side, however, is that the number of these expensive double integrals that must be performed increases as the square of the mask unit cell area; this number can cause even the fastest computers to balk if one needs to study medium- or long-range effects. One can reduce this computational burden by approximating with a smaller area, but accuracy is usually a concern, especially when building a model that will purportedly represent a manufacturing process. This work will review the current methodologies used to simulate the intensity distribution in air above the resist and address the above problems. More to the point, a methodology has been developed to eliminate the expensive numerical integrations in the TCC calculations, as the resulting integrals in many cases of interest can be either evaluated analytically, or replaced by analytical functions accurate to within machine precision. With the burden of computing these numbers lightened, more accurate representations of the image field can be realized, and better overall models are then possible.

Dual-sided coded-aperture imager

DOEpatents

Ziock, Klaus-Peter [Clinton, TN

2009-09-22

In a vehicle, a single detector plane simultaneously measures radiation coming through two coded-aperture masks, one on either side of the detector. To determine which side of the vehicle a source is, the two shadow masks are inverses of each other, i.e., one is a mask and the other is the anti-mask. All of the data that is collected is processed through two versions of an image reconstruction algorithm. One treats the data as if it were obtained through the mask, the other as though the data is obtained through the anti-mask.

Rigorous ILT optimization for advanced patterning and design-process co-optimization

NASA Astrophysics Data System (ADS)

Selinidis, Kosta; Kuechler, Bernd; Cai, Howard; Braam, Kyle; Hoppe, Wolfgang; Domnenko, Vitaly; Poonawala, Amyn; Xiao, Guangming

2018-03-01

Despite the large difficulties involved in extending 193i multiple patterning and the slow ramp of EUV lithography to full manufacturing readiness, the pace of development for new technology node variations has been accelerating. Multiple new variations of new and existing technology nodes have been introduced for a range of device applications; each variation with at least a few new process integration methods, layout constructs and/or design rules. This had led to a strong increase in the demand for predictive technology tools which can be used to quickly guide important patterning and design co-optimization decisions. In this paper, we introduce a novel hybrid predictive patterning method combining two patterning technologies which have each individually been widely used for process tuning, mask correction and process-design cooptimization. These technologies are rigorous lithography simulation and inverse lithography technology (ILT). Rigorous lithography simulation has been extensively used for process development/tuning, lithography tool user setup, photoresist hot-spot detection, photoresist-etch interaction analysis, lithography-TCAD interactions/sensitivities, source optimization and basic lithography design rule exploration. ILT has been extensively used in a range of lithographic areas including logic hot-spot fixing, memory layout correction, dense memory cell optimization, assist feature (AF) optimization, source optimization, complex patterning design rules and design-technology co-optimization (DTCO). The combined optimization capability of these two technologies will therefore have a wide range of useful applications. We investigate the benefits of the new functionality for a few of these advanced applications including correction for photoresist top loss and resist scumming hotspots.

Effects of Temporal Integration on the Shape of Visual Backward Masking Functions

ERIC Educational Resources Information Center

Francis, Gregory; Cho, Yang Seok

2008-01-01

Many studies of cognition and perception use a visual mask to explore the dynamics of information processing of a target. Especially important in these applications is the time between the target and mask stimuli. A plot of some measure of target visibility against stimulus onset asynchrony is called a masking function, which can sometimes be…

Progress in mask replication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Selinidis, Kosta S.; Brooks, Cynthia B.; Doyle, Gary F.; Brown, Laura; Jones, Chris; Imhof, Joseph; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

2011-04-01

The Jet and Flash Imprint Lithography (J-FILTM) process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105imprints. This suggests that tens of thousands of templates/masks will be required to satisfy the needs of a manufacturing environment. Electron-beam patterning is too slow to feasibly deliver these volumes, but instead can provide a high quality "master" mask which can be replicated many times with an imprint lithography tool. This strategy has the capability to produce the required supply of "working" templates/masks. In this paper, we review the development of the mask form factor, imprint replication tools and processes specifically for semiconductor applications. The requirements needed for semiconductors dictate the need for a well defined form factor for both master and replica masks which is also compatible with the existing mask infrastructure established for the 6025 semi standard, 6" x 6" x 0.25" photomasks. Complying with this standard provides the necessary tooling needed for mask fabrication processes, cleaning, metrology, and inspection. The replica form factor has additional features specific to imprinting such as a pre-patterned mesa. A PerfectaTM MR5000 mask replication tool has been developed specifically to pattern replica masks from an e-beam written master. The system specifications include a throughput of four replicas per hour with an added image placement component of 5nm, 3sigma and a critical dimension uniformity error of less than 1nm, 3sigma. A new process has been developed to fabricate replicas with high contrast alignment marks so that designs for imprint can fit within current device layouts and maximize the usable printed area on the wafer. Initial performance results of this marks are comparable to the baseline fused silica align marks.

The use of masks and respirators to prevent transmission of influenza: a systematic review of the scientific evidence

PubMed Central

bin‐Reza, Faisal; Lopez Chavarrias, Vicente; Nicoll, Angus; Chamberland, Mary E.

2011-01-01

Please cite this paper as: bin‐Reza et al. (2012) The use of masks and respirators to prevent transmission of influenza: a systematic review of the scientific evidence. Influenza and Other Respiratory Viruses 6(4), 257–267. There are limited data on the use of masks and respirators to reduce transmission of influenza. A systematic review was undertaken to help inform pandemic influenza guidance in the United Kingdom. The initial review was performed in November 2009 and updated in June 2010 and January 2011. Inclusion criteria included randomised controlled trials and quasi‐experimental and observational studies of humans published in English with an outcome of laboratory‐confirmed or clinically‐diagnosed influenza and other viral respiratory infections. There were 17 eligible studies. Six of eight randomised controlled trials found no significant differences between control and intervention groups (masks with or without hand hygiene; N95/P2 respirators). One household trial found that mask wearing coupled with hand sanitiser use reduced secondary transmission of upper respiratory infection/influenza‐like illness/laboratory‐confirmed influenza compared with education; hand sanitiser alone resulted in no reduction. One hospital‐based trial found a lower rate of clinical respiratory illness associated with non‐fit‐tested N95 respirator use compared with medical masks. Eight of nine retrospective observational studies found that mask and/or respirator use was independently associated with a reduced risk of severe acute respiratory syndrome (SARS). Findings, however, may not be applicable to influenza and many studies were suboptimal. None of the studies established a conclusive relationship between mask/respirator use and protection against influenza infection. Some evidence suggests that mask use is best undertaken as part of a package of personal protection especially hand hygiene. The effectiveness of masks and respirators is likely linked to early, consistent and correct usage. PMID:22188875

A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme.

PubMed

Fan, Ching-Lin; Shang, Ming-Chi; Li, Bo-Jyun; Lin, Yu-Zuo; Wang, Shea-Jue; Lee, Win-Der

2014-08-11

Minimizing the parasitic capacitance and the number of photo-masks can improve operational speed and reduce fabrication costs. Therefore, in this study, a new two-photo-mask process is proposed that exhibits a self-aligned structure without an etching-stop layer. Combining the backside-ultraviolet (BUV) exposure and backside-lift-off (BLO) schemes can not only prevent the damage when etching the source/drain (S/D) electrodes but also reduce the number of photo-masks required during fabrication and minimize the parasitic capacitance with the decreasing of gate overlap length at same time. Compared with traditional fabrication processes, the proposed process yields that thin-film transistors (TFTs) exhibit comparable field-effect mobility (9.5 cm²/V·s), threshold voltage (3.39 V), and subthreshold swing (0.3 V/decade). The delay time of an inverter fabricated using the proposed process was considerably decreased.

A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme

PubMed Central

Fan, Ching-Lin; Shang, Ming-Chi; Li, Bo-Jyun; Lin, Yu-Zuo; Wang, Shea-Jue; Lee, Win-Der

2014-01-01

Minimizing the parasitic capacitance and the number of photo-masks can improve operational speed and reduce fabrication costs. Therefore, in this study, a new two-photo-mask process is proposed that exhibits a self-aligned structure without an etching-stop layer. Combining the backside-ultraviolet (BUV) exposure and backside-lift-off (BLO) schemes can not only prevent the damage when etching the source/drain (S/D) electrodes but also reduce the number of photo-masks required during fabrication and minimize the parasitic capacitance with the decreasing of gate overlap length at same time. Compared with traditional fabrication processes, the proposed process yields that thin-film transistors (TFTs) exhibit comparable field-effect mobility (9.5 cm2/V·s), threshold voltage (3.39 V), and subthreshold swing (0.3 V/decade). The delay time of an inverter fabricated using the proposed process was considerably decreased. PMID:28788159

A diffusion model account of masked vs. unmasked priming: Are they qualitatively different?

PubMed Central

Gomez, Pablo; Perea, Manuel; Ratcliff, Roger

2017-01-01

In the past decades, hundreds of articles have explored the mechanisms underlying priming. Most researchers assume that masked and unmasked priming are qualitatively different. For masked priming, the effects are often assumed to reflect savings in the encoding of the target stimulus, whereas for unmasked priming, it has been suggested that the effects reflect the familiarity of the prime-target compound cue. In contrast, other researchers have claimed that masked and unmasked priming reflect essentially the same core processes. In this article, we use the diffusion model (Ratcliff, 1978) to account for the effects of masked and unmasked priming for identity and associatively related primes. The fits of the model lead us to the following conclusion: masked related primes give a head start to the processing of the target compared to unrelated primes, while unmasked priming affects primarily the quality of the lexical information. PMID:23647337

A rank-based approach for correcting systematic biases in spatial disaggregation of coarse-scale climate simulations

NASA Astrophysics Data System (ADS)

Nahar, Jannatun; Johnson, Fiona; Sharma, Ashish

2017-07-01

Use of General Circulation Model (GCM) precipitation and evapotranspiration sequences for hydrologic modelling can result in unrealistic simulations due to the coarse scales at which GCMs operate and the systematic biases they contain. The Bias Correction Spatial Disaggregation (BCSD) method is a popular statistical downscaling and bias correction method developed to address this issue. The advantage of BCSD is its ability to reduce biases in the distribution of precipitation totals at the GCM scale and then introduce more realistic variability at finer scales than simpler spatial interpolation schemes. Although BCSD corrects biases at the GCM scale before disaggregation; at finer spatial scales biases are re-introduced by the assumptions made in the spatial disaggregation process. Our study focuses on this limitation of BCSD and proposes a rank-based approach that aims to reduce the spatial disaggregation bias especially for both low and high precipitation extremes. BCSD requires the specification of a multiplicative bias correction anomaly field that represents the ratio of the fine scale precipitation to the disaggregated precipitation. It is shown that there is significant temporal variation in the anomalies, which is masked when a mean anomaly field is used. This can be improved by modelling the anomalies in rank-space. Results from the application of the rank-BCSD procedure improve the match between the distributions of observed and downscaled precipitation at the fine scale compared to the original BCSD approach. Further improvements in the distribution are identified when a scaling correction to preserve mass in the disaggregation process is implemented. An assessment of the approach using a single GCM over Australia shows clear advantages especially in the simulation of particularly low and high downscaled precipitation amounts.

Etch bias inversion during EUV mask ARC etch

NASA Astrophysics Data System (ADS)

Lajn, Alexander; Rolff, Haiko; Wistrom, Richard

2017-07-01

The introduction of EUV lithography to high volume manufacturing is now within reach for 7nm technology node and beyond (1), at least for some steps. The scheduling is in transition from long to mid-term. Thus, all contributors need to focus their efforts on the production requirements. For the photo mask industry, these requirements include the control of defectivity, CD performance and lifetime of their masks. The mask CD performance including CD uniformity, CD targeting, and CD linearity/ resolution, is predominantly determined by the photo resist performance and by the litho and etch processes. State-of-the-art chemically amplified resists exhibit an asymmetric resolution for directly and indirectly written features, which usually results in a similarly asymmetric resolution performance on the mask. This resolution gap may reach as high as multiple tens of nanometers on the mask level in dependence of the chosen processes. Depending on the printing requirements of the wafer process, a reduction or even an increase of this gap may be required. A potential way of tuning via the etch process, is to control the lateral CD contribution during etch. Aside from process tuning knobs like pressure, RF powers and gases, which usually also affect CD linearity and CD uniformity, the simplest knob is the etch time itself. An increased over etch time results in an increased CD contribution in the normal case. , We found that the etch CD contribution of ARC layer etch on EUV photo masks is reduced by longer over etch times. Moreover, this effect can be demonstrated to be present for different etch chambers and photo resists.

Patterned mask inspection technology with Projection Electron Microscope (PEM) technique for 11 nm half-pitch (hp) generation EUV masks

NASA Astrophysics Data System (ADS)

Hirano, Ryoichi; Iida, Susumu; Amano, Tsuyoshi; Watanabe, Hidehiro; Hatakeyama, Masahiro; Murakami, Takeshi; Yoshikawa, Shoji; Suematsu, Kenichi; Terao, Kenji

2015-07-01

High-sensitivity EUV mask pattern defect detection is one of the major issues in order to realize the device fabrication by using the EUV lithography. We have already designed a novel Projection Electron Microscope (PEM) optics that has been integrated into a new inspection system named EBEYE-V30 ("Model EBEYE" is an EBARA's model code), and which seems to be quite promising for 16 nm hp generation EUVL Patterned mask Inspection (PI). Defect inspection sensitivity was evaluated by capturing an electron image generated at the mask by focusing onto an image sensor. The progress of the novel PEM optics performance is not only about making an image sensor with higher resolution but also about doing a better image processing to enhance the defect signal. In this paper, we describe the experimental results of EUV patterned mask inspection using the above-mentioned system. The performance of the system is measured in terms of defect detectability for 11 nm hp generation EUV mask. To improve the inspection throughput for 11 nm hp generation defect detection, it would require a data processing rate of greater than 1.5 Giga- Pixel-Per-Second (GPPS) that would realize less than eight hours of inspection time including the step-and-scan motion associated with the process. The aims of the development program are to attain a higher throughput, and enhance the defect detection sensitivity by using an adequate pixel size with sophisticated image processing resulting in a higher processing rate.

Electron beam mask writer EBM-9500 for logic 7nm node generation

NASA Astrophysics Data System (ADS)

Matsui, Hideki; Kamikubo, Takashi; Nakahashi, Satoshi; Nomura, Haruyuki; Nakayamada, Noriaki; Suganuma, Mizuna; Kato, Yasuo; Yashima, Jun; Katsap, Victor; Saito, Kenichi; Kobayashi, Ryoei; Miyamoto, Nobuo; Ogasawara, Munehiro

2016-10-01

Semiconductor scaling is slowing down because of difficulties of device manufacturing below logic 7nm node generation. Various lithography candidates which include ArF immersion with resolution enhancement technology (like Inversed Lithography technology), Extreme Ultra Violet lithography and Nano Imprint lithography are being developed to address the situation. In such advanced lithography, shot counts of mask patterns are estimated to increase explosively in critical layers, and then it is hoped that multi beam mask writer (MBMW) is released to handle them within realistic write time. However, ArF immersion technology with multiple patterning will continue to be a mainstream lithography solution for most of the layers. Then, the shot counts in less critical layers are estimated to be stable because of the limitation of resolution in ArF immersion technology. Therefore, single beam mask writer (SBMW) can play an important role for mask production still, relative to MBMW. Also the demand of SBMW seems actually strong for the logic 7nm node. To realize this, we have developed a new SBMW, EBM-9500 for mask fabrication in this generation. A newly introduced electron beam source enables higher current density of 1200A/cm2. Heating effect correction function has also been newly introduced to satisfy the requirements for both pattern accuracy and throughput. In this paper, we will report the configuration and performance of EBM-9500.

Lithography-based automation in the design of program defect masks

NASA Astrophysics Data System (ADS)

Vakanas, George P.; Munir, Saghir; Tejnil, Edita; Bald, Daniel J.; Nagpal, Rajesh

2004-05-01

In this work, we are reporting on a lithography-based methodology and automation in the design of Program Defect masks (PDM"s). Leading edge technology masks have ever-shrinking primary features and more pronounced model-based secondary features such as optical proximity corrections (OPC), sub-resolution assist features (SRAF"s) and phase-shifted mask (PSM) structures. In order to define defect disposition specifications for critical layers of a technology node, experience alone in deciding worst-case scenarios for the placement of program defects is necessary but may not be sufficient. MEEF calculations initiated from layout pattern data and their integration in a PDM layout flow provide a natural approach for improvements, relevance and accuracy in the placement of programmed defects. This methodology provides closed-loop feedback between layout and hard defect disposition specifications, thereby minimizing engineering test restarts, improving quality and reducing cost of high-end masks. Apart from SEMI and industry standards, best-known methods (BKM"s) in integrated lithographically-based layout methodologies and automation specific to PDM"s are scarce. The contribution of this paper lies in the implementation of Design-For-Test (DFT) principles to a synergistic interaction of CAD Layout and Aerial Image Simulator to drive layout improvements, highlight layout-to-fracture interactions and output accurate program defect placement coordinates to be used by tools in the mask shop.

Results from the first fully automated PBS-mask process and pelliclization

NASA Astrophysics Data System (ADS)

Oelmann, Andreas B.; Unger, Gerd M.

1994-02-01

Automation is widely discussed in IC- and mask-manufacturing and partially realized everywhere. The idea for the automation goes back to 1978, when it turned out that the operators for the then newly installed PBS-process-line (the first in Europe) should be trained to behave like robots for particle reduction gaining lower defect densities on the masks. More than this goal has been achieved. It turned out recently, that the automation with its dedicated work routes and detailed documentation of every lot (individual mask or reticle) made it easy to obtain the CEEC certificate which includes ISO 9001.

Variations in backward masking with different masking stimuli: II. The effects of spatially quantised masks in the light of local contour interaction, interchannel inhibition, perceptual retouch, and substitution theories.

PubMed

Bachmann, Talis; Luiga, Iiris; Põder, Endel

2005-01-01

In part I we showed that with spatially non-overlapping targets and masks both local metacontrast-like interactions and attentional processes are involved in backward masking. In this second part we extend the strategy of varying the contents of masks to pattern masking where targets and masks overlap in space, in order to compare different masking theories. Images of human faces were backward-masked by three types of spatially quantised masks (the same faces as targets, faces different from targets, and Gaussian noise with power spectra typical for faces). Configural characteristics, rather than the spectral content of the mask, predicted the extent of masking at relatively long stimulus onset asynchronies (SOAs). This poses difficulties for the theory of transient-on-sustained inhibition as the principal mechanism of masking and also for local contour interaction being a decisive factor in pattern masking. The scale of quantisation had no effect on the masking capacity of noise masks and a strong effect on the capacity of different-face masks. Also, the decrease of configural masking with an increase in the coarseness of the quantisation of the mask highlights ambiguities inherent in the re-entrance-based substitution theory of masking. Different masking theories cannot solve the problems of masking separately. They should be combined in order to create a complex, yet comprehensible mode of interaction for the different mechanisms involved in visual backward masking.

A Harmonized Landsat-Sentinel-2 Surface Reflectance product: a resource for Agricultural Monitoring

NASA Astrophysics Data System (ADS)

Masek, J. G.; Claverie, M.; Ju, J.; Vermote, E.; Justice, C. O.

2015-12-01

The combination of Landsat and Sentinel-2 data offers a unique opportunity to observe globally the land every 2-3 days at medium (<30m) spatial resolution. The Harmonized Landsat-Sentinel-2 (HLS) project is a NASA initiative aiming to produce surface reflectance data from Landsat and Sentinel-2 missions and to deliver them to the community in a combined, seamless form. The HLS will be beneficial for global agricultural monitoring applications that require medium spatial resolution and weekly or more frequent observations. In particular, the provided opportunity to track crop phenology at the scale of individual fields will support detailed mapping of crop type and type-specific vegetation conditions. To create a compatible set of radiometric measurements, the HLS product relies on rigorous pre- and post-launch cross-calibration (Landsat-8 OLI and Sentinel-2 MSI) activities. The processing chain includes the following components: atmospheric correction, cloud/shadow masking, nadir BRDF-adjustment, spectral-adjustment, regridding, and temporal composite. The atmospheric correction and cloud masking is based on the OLI atmospheric correction developed at NASA-GSFC and has been adapted to the MSI data. The BRDF-adjustment is based on a disaggregation technique using MODIS-based BRDF coefficients. The technique has been evaluated using the multi-angular acquisition from the SPOT 4 and 5 (Take5) experiments. The spectral-adjustment relies on a linear regression that has been calibrated and evaluated using synthetic data and surface reflectance processed from a large number of hyperspectral EO-1 Hyperion scenes. Finally, significant effort is placed on product validation and evaluation. The delivered data set will include surface reflectance products at different levels: Using the native gridding, i.e. UTM, 30m for Landsat-8, and UTM, 10-20m for Sentinel-2 Using a common global gridding (Sinusoidal, 30m) Temporal composite (Sinusoidal, 30m, 5-day) During the first year of operation of Sentinel-2A, the HLS will be prototyped over a selection of 30 sites that includes some of the JECAM sites, Aeronet sites and Cal/Val sites. Then, the HLS spatial coverage will be increased as more Sentinel-2A data become available.

Novel contact hole reticle design for enhanced lithography process window in IC manufacturing

NASA Astrophysics Data System (ADS)

Chang, Chung-Hsing

2005-01-01

For 90nm node generation, 65nm, and beyond, dark field mask types such as contact-hole, via, and trench patterns that all are very challenging to print with satisfactory process windows for day-to-day lithography manufacturing. Resolution enhancement technology (RET) masks together with ArF high numerical aperture (NA) scanners have been recognized as the inevitable choice of method for 65nm node manufacturing. Among RET mask types, the alternating phase shifting mask (AltPSM) is one of the well-known strong enhancement techniques. However AltPSM can have a very strong optical proximity effect that comes with the use of small on-axis illumination sigma setting. For very dense contact features, it may be possible for AltPSM to overcome the phase conflict by limiting the mask design rules. But it is not feasible to resolve the inherent phase conflict for the semi-dense, semi-isolated and isolated contact areas. Hence the adoption of this strong enhancement technique for dark filed mask types in today"s IC manufacturing has been very limited. In this paper, we present a novel yet a very powerful design method to achieve contact and via masks printing for 90nm, 65nm, and beyond. We name our new mask design as: Novel Improved Contact-hole pattern Exposure PSM (NICE PSM) with off-axis illumination, such as QUASAR. This RET masks design can enhance the process window of isolated, semi-isolated contact hole and via hole patterns. The main concepts of NICE PSM with QUASAR off-axis illumination are analogous to the Super-FLEX pupil filter technology.

Novel contact hole reticle design for enhanced lithography process window in IC manufacturing

NASA Astrophysics Data System (ADS)

Chang, Chung-Hsing

2004-10-01

For 90nm node generation, 65nm, and beyond, dark field mask types such as contact-hole, via, and trench patterns that all are very challenging to print with satisfactory process windows for day-to-day lithography manufacturing. Resolution enhancement technology (RET) masks together with ArF high numerical aperture (NA) scanners have been recognized as the inevitable choice of method for 65nm node manufacturing. Among RET mask types, the alternating phase shifting mask (AltPSM) is one of the well-known strong enhancement techniques. However, AltPSM can have a very strong optical proximity effect that comes with the use of small on-axis illumination sigma setting. For very dense contact features, it may be possible for AltPSM to overcome the phase conflict by limiting the mask design rules. But it is not feasible to resolve the inherent phase conflict for the semi-dense, semi-isolated and isolated contact areas. Hence the adoption of this strong enhancement technique for dark filed mask types in today"s IC manufacturing has been very limited. In this paper, we report a novel yet a very powerful design method to achieve contact and via masks printing for 90nm, 65nm, and beyond. We name our new mask design as: Novel Improved Contact-hole pattern Exposure PSM (NICE PSM) with off-axis illumination, such as QUASAR. This RET masks design can enhance the process window of isolated, semi-isolated contact hole and via hole patterns. The main concepts of NICE PSM with QUASAR off-axis illumination are analogous to the Super-FLEX pupil filter technology.

The extended functional neuroanatomy of emotional processing biases for masked faces in major depressive disorder.

PubMed

Victor, Teresa A; Furey, Maura L; Fromm, Stephen J; Bellgowan, Patrick S F; Öhman, Arne; Drevets, Wayne C

2012-01-01

Major depressive disorder (MDD) is associated with a mood-congruent processing bias in the amygdala toward face stimuli portraying sad expressions that is evident even when such stimuli are presented below the level of conscious awareness. The extended functional anatomical network that maintains this response bias has not been established, however. To identify neural network differences in the hemodynamic response to implicitly presented facial expressions between depressed and healthy control participants. Unmedicated-depressed participants with MDD (n=22) and healthy controls (HC; n=25) underwent functional MRI as they viewed face stimuli showing sad, happy or neutral face expressions, presented using a backward masking design. The blood-oxygen-level dependent (BOLD) signal was measured to identify regions where the hemodynamic response to the emotionally valenced stimuli differed between groups. The MDD subjects showed greater BOLD responses than the controls to masked-sad versus masked-happy faces in the hippocampus, amygdala and anterior inferotemporal cortex. While viewing both masked-sad and masked-happy faces relative to masked-neutral faces, the depressed subjects showed greater hemodynamic responses than the controls in a network that included the medial and orbital prefrontal cortices and anterior temporal cortex. Depressed and healthy participants showed distinct hemodynamic responses to masked-sad and masked-happy faces in neural circuits known to support the processing of emotionally valenced stimuli and to integrate the sensory and visceromotor aspects of emotional behavior. Altered function within these networks in MDD may establish and maintain illness-associated differences in the salience of sensory/social stimuli, such that attention is biased toward negative and away from positive stimuli.

Lithographic qualification of high-transmission mask blank for 10nm node and beyond

NASA Astrophysics Data System (ADS)

Xu, Yongan; Faure, Tom; Viswanathan, Ramya; Lobb, Granger; Wistrom, Richard; Burns, Sean; Hu, Lin; Graur, Ioana; Bleiman, Ben; Fischer, Dan; Mignot, Yann; Sakamoto, Yoshifumi; Toda, Yusuke; Bolton, John; Bailey, Todd; Felix, Nelson; Arnold, John; Colburn, Matthew

2016-04-01

In this paper, we discuss the lithographic qualification of high transmission (High T) mask for Via and contact hole applications in 10nm node and beyond. First, the simulated MEEF and depth of focus (DoF) data are compared between the 6% and High T attnPSM masks with the transmission of High T mask blank varying from 12% to 20%. The 12% High T blank shows significantly better MEEF and larger DoF than those of 6% attnPSM mask blank, which are consistent with our wafer data. However, the simulations show no obvious advantage in MEEF and DoF when the blank transmittance is larger than 12%. From our wafer data, it has been seen that the common process window from High T mask is 40nm bigger than that from the 6% attnPSM mask. In the elongated bar structure with smaller aspect ratio, 1.26, the 12% High T mask shows significantly less develop CD pull back in the major direction. Compared to the High T mask, the optimized new illumination condition for 6% attnPSM shows limited improvement in MEEF and the DoF through pitch. In addition, by using the High T mask blank, we have also investigated the SRAF printing, side lobe printing and the resist profile through cross sections, and no patterning risk has been found for manufacturing. As part of this work new 12% High T mask blank materials and processes were developed, and a brief overview of key mask technology development results have been shared. Overall, it is concluded that the High T mask, 12% transmission, provides the most robust and extendable lithographic solution for 10nm node and beyond.

An alternative method of fabricating sub-micron resolution masks using excimer laser ablation

NASA Astrophysics Data System (ADS)

Hayden, C. J.; Eijkel, J. C. T.; Dalton, C.

2004-06-01

In the work presented here, an excimer laser micromachining system has been used successfully to fabricate high-resolution projection and contact masks. The contact masks were subsequently used to produce chrome-gold circular ac electro-osmotic pump (cACEOP) microelectrode arrays on glass substrates, using a conventional contact photolithography process. The contact masks were produced rapidly (~15 min each) and were found to be accurate to sub-micron resolution, demonstrating an alternative route for mask fabrication. Laser machined masks were also used in a laser-projection system, demonstrating that such fabrication techniques are also suited to projection lithography. The work addresses a need for quick reproduction of high-resolution contact masks, given their rapid degradation when compared to non-contact masks.

Fabless company mask technology approach: fabless but not fab-careless

NASA Astrophysics Data System (ADS)

Hisamura, Toshiyuki; Wu, Xin

2009-10-01

There are two different foundry-fabless working models in the aspect of mask. Some foundries have in-house mask facility while others contract with merchant mask vendors. Significant progress has been made in both kinds of situations. Xilinx as one of the pioneers of fabless semiconductor companies has been continually working very closely with both merchant mask vendors and mask facilities of foundries in past many years, contributed well in both technology development and benefited from corporations. Our involvement in manufacturing is driven by the following three elements: The first element is to understand the new fabrication and mask technologies and then find a suitable design / layout style to better utilize these new technologies and avoid potential risks. Because Xilinx has always been involved in early stage of advanced technology nodes, this early understanding and adoption is especially important. The second element is time to market. Reduction in mask and wafer manufacturing cycle-time can ensure faster time to market. The third element is quality. Commitment to quality is our highest priority for our customers. We have enough visibility on any manufacturing issues affecting the device functionality. Good correlation has consistently been observed between FPGA speed uniformity and the poly mask Critical Dimension (CD) uniformity performance. To achieve FPGA speed uniformity requirement, the manufacturing process as well as the mask and wafer CD uniformity has to be monitored. Xilinx works closely with the wafer foundries and mask suppliers to improve productivity and the yield from initial development stage of mask making operations. As an example, defect density reduction is one of the biggest challenges for mask supplier in development stage to meet the yield target satisfying the mask cost and mask turn-around-time (TAT) requirement. Historically, masks were considered to be defect free but at these advanced process nodes, that assumption no longer holds true. There is a need to be flexible enough on unrepairable defect at early stage but also a need for efficient risk management system on mask defect waivers. Mask defects are often waived in low design criticality area in favor of scrapping the mask and delaying the mask and wafer schedule. Xilinx's involvement in mask manufacturing has contributed significantly to our success in past many nodes and will continue.

[Effects of noise competition on monosyllabic and disyllabic word perception in children].

PubMed

Liu, H H; Liu, S; Li, Y; Zheng, Z P; Jin, X; Li, J; Ren, C C; Zheng, J; Zhang, J; Chen, M; Hao, J S; Yang, Y; Liu, W; Ni, X

2017-05-07

Objective: The purpose of the present study was to investigate the effects of noise competition on word perception in normal hearing (NH) children and children with cochlear implantation (CI). Methods: To estimate the contribution of noise competition on speech perception, word perception in speech-shaped noise(SSN)and 4-talker babble noise(BN) with Mandarin Lexical Neighborhood Test were performed in 80 NH children and 89 children with CI. Corrected perception percentages were acquired in each group. Results: Both signal to noise ratio (SNR) and noise type influenced the word perception. In NH group, corrected percentages of disyllabic word perception in SSN were 24.2%, 55.9%, 77.1%, 85.1% and 88.9% at -8, -4, 0, 4 and 8 dB SNR, corresponding corrected percentages of monosyllabic word were 13.9%, 39.5%, 60.1%, 68.8% and 80.1%, respectively. In BN noise, corrected percentages of disyllabic word were 2.4%, 24.3%, 55.6%, 74.3% and 86.2%, corresponding monosyllabic word were 2.3%, 20.8%, 47.2%, 61.1% and 74.8%, respectively. In CI group, corrected percentages of dissyllabic word in SSN and BN at 10 dB SNR were 65.5% and 58.1%, respectively. Corresponding monosyllabic word were 49.0% and 41.0%. For SNR=5 dB, corrected percentages of disyllabic word in SSN and BN were 50.0% and 38.1%, corresponding corrected percentages of monosyllabic word were 40.8% and 25.1%, respectively. Analysis indicated that the masking effect were significantly higher in BN compared with SSN. Conclusions: Noise competition influence word perception performance significantly. In specific, the influence of noise on word perception is bigger in children with CI than in NH children. The masking effect is higher in BN noise when compared with SSN.

Intelligent model-based OPC

NASA Astrophysics Data System (ADS)

Huang, W. C.; Lai, C. M.; Luo, B.; Tsai, C. K.; Chih, M. H.; Lai, C. W.; Kuo, C. C.; Liu, R. G.; Lin, H. T.

2006-03-01

Optical proximity correction is the technique of pre-distorting mask layouts so that the printed patterns are as close to the desired shapes as possible. For model-based optical proximity correction, a lithographic model to predict the edge position (contour) of patterns on the wafer after lithographic processing is needed. Generally, segmentation of edges is performed prior to the correction. Pattern edges are dissected into several small segments with corresponding target points. During the correction, the edges are moved back and forth from the initial drawn position, assisted by the lithographic model, to finally settle on the proper positions. When the correction converges, the intensity predicted by the model in every target points hits the model-specific threshold value. Several iterations are required to achieve the convergence and the computation time increases with the increase of the required iterations. An artificial neural network is an information-processing paradigm inspired by biological nervous systems, such as how the brain processes information. It is composed of a large number of highly interconnected processing elements (neurons) working in unison to solve specific problems. A neural network can be a powerful data-modeling tool that is able to capture and represent complex input/output relationships. The network can accurately predict the behavior of a system via the learning procedure. A radial basis function network, a variant of artificial neural network, is an efficient function approximator. In this paper, a radial basis function network was used to build a mapping from the segment characteristics to the edge shift from the drawn position. This network can provide a good initial guess for each segment that OPC has carried out. The good initial guess reduces the required iterations. Consequently, cycle time can be shortened effectively. The optimization of the radial basis function network for this system was practiced by genetic algorithm, which is an artificially intelligent optimization method with a high probability to obtain global optimization. From preliminary results, the required iterations were reduced from 5 to 2 for a simple dumbbell-shape layout.

Masking of Figure-Ground Texture and Single Targets by Surround Inhibition: A Computational Spiking Model

PubMed Central

Supèr, Hans; Romeo, August

2012-01-01

A visual stimulus can be made invisible, i.e. masked, by the presentation of a second stimulus. In the sensory cortex, neural responses to a masked stimulus are suppressed, yet how this suppression comes about is still debated. Inhibitory models explain masking by asserting that the mask exerts an inhibitory influence on the responses of a neuron evoked by the target. However, other models argue that the masking interferes with recurrent or reentrant processing. Using computer modeling, we show that surround inhibition evoked by ON and OFF responses to the mask suppresses the responses to a briefly presented stimulus in forward and backward masking paradigms. Our model results resemble several previously described psychophysical and neurophysiological findings in perceptual masking experiments and are in line with earlier theoretical descriptions of masking. We suggest that precise spatiotemporal influence of surround inhibition is relevant for visual detection. PMID:22393370

Does a 4 diagram manual enable laypersons to operate the Laryngeal Mask Supreme®? A pilot study in the manikin.

PubMed

Schälte, Gereon; Stoppe, Christian; Rossaint, Rolf; Gilles, Laura; Heuser, Maike; Rex, Steffen; Coburn, Mark; Zoremba, Norbert; Rieg, Annette

2012-03-27

Bystander resuscitation plays an important role in lifesaving cardiopulmonary resuscitation (CPR). A significant reduction in the "no-flow-time", quantitatively better chest compressions and an improved quality of ventilation can be demonstrated during CPR using supraglottic airway devices (SADs). Previous studies have demonstrated the ability of inexperienced persons to operate SADs after brief instruction. The aim of this pilot study was to determine whether an instruction manual consisting of four diagrams enables laypersons to operate a Laryngeal Mask Supreme® (LMAS) in the manikin. An instruction manual of four illustrations with speech bubbles displaying the correct use of the LMAS was designed. Laypersons were handed a bag containing a LMAS, a bag mask valve device (BMV), a syringe prefilled with air and the instruction sheet, and were asked to perform and ventilate the manikin as displayed. Time to ventilation was recorded and degree of success evaluated. A total of 150 laypersons took part. Overall 145 participants (96.7%) inserted the LMAS in the manikin in the right direction. The device was inserted inverted or twisted in 13 (8.7%) attempts. Eight (5.3%) individuals recognized this and corrected the position. Within the first 2 minutes 119 (79.3%) applicants were able to insert the LMAS and provide tidal volumes greater than 150 ml (estimated dead space). Time to insertion and first ventilation was 83.2 ± 29 s. No significant difference related to previous BLS training (P = 0.85), technical education (P = 0.07) or gender could be demonstrated (P = 0.25). In manikin laypersons could insert LMAS in the correct direction after onsite instruction by a simple manual with a high success rate. This indicates some basic procedural understanding and intellectual transfer in principle. Operating errors (n = 91) were frequently not recognized and corrected (n = 77). Improvements in labeling and the quality of instructional photographs may reduce individual error and may optimize understanding.

65-nm full-chip implementation using double dipole lithography

NASA Astrophysics Data System (ADS)

Hsu, Stephen D.; Chen, J. Fung; Cororan, Noel; Knose, William T.; Van Den Broeke, Douglas J.; Laidig, Thomas L.; Wampler, Kurt E.; Shi, Xuelong; Hsu, Michael; Eurlings, Mark; Finders, Jo; Chiou, Tsann-Bim; Socha, Robert J.; Conley, Will; Hsieh, Yen W.; Tuan, Steve; Hsieh, Frank

2003-06-01

Double Dipole Lithography (DDL) has been demonstrated to be capable of patterning complex 2D patterns. Due to inherently high aerial imaging contrast, especially for dense features, we have found that it has a very good potential to meet manufacturing requirements for the 65nm node using ArF binary chrome masks. For patterning in the k1<0.35 regime without resorting to hard phase-shift masks (PSMs), DDL is one unique Resolution Enhancement Technique (RET) which can achieve an acceptable process window. To utilize DDL for printing actual IC devices, the original design data must be decomposed into "vertical (V)" and "horizontal (H)" masks for the respective X- and Y-dipole exposures. An improved two-pass, model-based, DDL mask data processing methodology has been established. It is capable of simultaneously converting complex logic and memory mask patterns into DDL compatible mask layout. To maximize the overlapped process window area, we have previously shown that the pattern-shielding algorithm must be intelligently applied together with both Scattering Bars (SBs) and model-based OPC (MOPC). Due to double exposures, stray light must be well-controlled to ensure uniform printing across the entire chip. One solution to minimize stray light is to apply large patches of solid chrome in open areas to reduce the background transmission during exposure. Unfortunately, this is not feasible for a typical clear-field poly gate masks to be patterned by a positive resist process. In this work, we report a production-worthy DDL mask pattern decomposition scheme for full-chip application. A new generation of DDL technology reticle set has been developed to verify the printing performance. Shielding is a critical part of the DDL. An innovative shielding scheme has been developed to protect the critical features and minimize the impact of stray light during double exposure.

Orientation tuning of contrast masking caused by motion streaks.

PubMed

Apthorp, Deborah; Cass, John; Alais, David

2010-08-01

We investigated whether the oriented trails of blur left by fast-moving dots (i.e., "motion streaks") effectively mask grating targets. Using a classic overlay masking paradigm, we varied mask contrast and target orientation to reveal underlying tuning. Fast-moving Gaussian blob arrays elevated thresholds for detection of static gratings, both monoptically and dichoptically. Monoptic masking at high mask (i.e., streak) contrasts is tuned for orientation and exhibits a similar bandwidth to masking functions obtained with grating stimuli (∼30 degrees). Dichoptic masking fails to show reliable orientation-tuned masking, but dichoptic masks at very low contrast produce a narrowly tuned facilitation (∼17 degrees). For iso-oriented streak masks and grating targets, we also explored masking as a function of mask contrast. Interestingly, dichoptic masking shows a classic "dipper"-like TVC function, whereas monoptic masking shows no dip and a steeper "handle". There is a very strong unoriented component to the masking, which we attribute to transiently biased temporal frequency masking. Fourier analysis of "motion streak" images shows interesting differences between dichoptic and monoptic functions and the information in the stimulus. Our data add weight to the growing body of evidence that the oriented blur of motion streaks contributes to the processing of fast motion signals.

Improved algorithm for computerized detection and quantification of pulmonary emphysema at high-resolution computed tomography (HRCT)

NASA Astrophysics Data System (ADS)

Tylen, Ulf; Friman, Ola; Borga, Magnus; Angelhed, Jan-Erik

2001-05-01

Emphysema is characterized by destruction of lung tissue with development of small or large holes within the lung. These areas will have Hounsfield values (HU) approaching -1000. It is possible to detect and quantificate such areas using simple density mask technique. The edge enhancement reconstruction algorithm, gravity and motion of the heart and vessels during scanning causes artefacts, however. The purpose of our work was to construct an algorithm that detects such image artefacts and corrects them. The first step is to apply inverse filtering to the image removing much of the effect of the edge enhancement reconstruction algorithm. The next step implies computation of the antero-posterior density gradient caused by gravity and correction for that. Motion artefacts are in a third step corrected for by use of normalized averaging, thresholding and region growing. Twenty healthy volunteers were investigated, 10 with slight emphysema and 10 without. Using simple density mask technique it was not possible to separate persons with disease from those without. Our algorithm improved separation of the two groups considerably. Our algorithm needs further refinement, but may form a basis for further development of methods for computerized diagnosis and quantification of emphysema by HRCT.

Checkpoint-based forward recovery using lookahead execution and rollback validation in parallel and distributed systems. Ph.D. Thesis, 1992

NASA Technical Reports Server (NTRS)

Long, Junsheng

1994-01-01

This thesis studies a forward recovery strategy using checkpointing and optimistic execution in parallel and distributed systems. The approach uses replicated tasks executing on different processors for forwared recovery and checkpoint comparison for error detection. To reduce overall redundancy, this approach employs a lower static redundancy in the common error-free situation to detect error than the standard N Module Redundancy scheme (NMR) does to mask off errors. For the rare occurrence of an error, this approach uses some extra redundancy for recovery. To reduce the run-time recovery overhead, look-ahead processes are used to advance computation speculatively and a rollback process is used to produce a diagnosis for correct look-ahead processes without rollback of the whole system. Both analytical and experimental evaluation have shown that this strategy can provide a nearly error-free execution time even under faults with a lower average redundancy than NMR.

Sequential responding and planning in capuchin monkeys (Cebus apella).

PubMed

Beran, Michael J; Parrish, Audrey E

2012-11-01

Previous experiments have assessed planning during sequential responding to computer generated stimuli by Old World nonhuman primates including chimpanzees and rhesus macaques. However, no such assessment has been made with a New World primate species. Capuchin monkeys (Cebus apella) are an interesting test case for assessing the distribution of cognitive processes in the Order Primates because they sometimes show proficiency in tasks also mastered by apes and Old World monkeys, but in other cases fail to match the proficiency of those other species. In two experiments, eight capuchin monkeys selected five arbitrary stimuli in distinct locations on a computer monitor in a learned sequence. In Experiment 1, shift trials occurred in which the second and third stimuli were transposed when the first stimulus was selected by the animal. In Experiment 2, mask trials occurred in which all remaining stimuli were masked after the monkey selected the first stimulus. Monkeys made more mistakes on trials in which the locations of the second and third stimuli were interchanged than on trials in which locations were not interchanged, suggesting they had already planned to select a location that no longer contained the correct stimulus. When mask trials occurred, monkeys performed at levels significantly better than chance, but their performance exceeded chance levels only for the first and the second selections on a trial. These data indicate that capuchin monkeys performed very similarly to chimpanzees and rhesus monkeys and appeared to plan their selection sequences during the computerized task, but only to a limited degree.

Development of binary image masks for TPF-C and ground-based AO coronagraphs

NASA Astrophysics Data System (ADS)

Ge, Jian; Crepp, Justin; Vanden Heuvel, Andrew; Miller, Shane; McDavitt, Dan; Kravchenko, Ivan; Kuchner, Marc

2006-06-01

We report progress on the development of precision binary notch-filter focal plane coronagraphic masks for directly imaging Earth-like planets at visible wavelengths with the Terrestrial Planet Finder Coronagraph (TPF-C), and substellar companions at near infrared wavelengths from the ground with coronagraphs coupled to high-order adaptive optics (AO) systems. Our recent theoretical studies show that 8th-order image masks (Kuchner, Crepp & Ge 2005, KCG05) are capable of achieving unlimited dynamic range in an ideal optical system, while simultaneously remaining relatively insensitive to low-spatial-frequency optical aberrations, such as tip/tilt errors, defocus, coma, astigmatism, etc. These features offer a suite of advantages for the TPF-C by relaxing many control and stability requirements, and can also provide resistance to common practical problems associated with ground-based observations; for example, telescope flexure and low-order errors left uncorrected by the AO system due to wavefront sensor-deformable mirror lag time can leak light at significant levels. Our recent lab experiments show that prototype image masks can generate contrast levels on the order of 2x10 -6 at 3 λ/D and 6x10 -7 at 10 λ/D without deformable mirror correction using monochromatic light (Crepp et al. 2006), and that this contrast is limited primarily by light scattered by imperfections in the optics and extra diffraction created by mask construction errors. These experiments also indicate that the tilt and defocus sensitivities of high-order masks follow the theoretical predictions of Shaklan and Green 2005. In this paper, we discuss these topics as well as review our progress on developing techniques for fabricating a new series of image masks that are "free-standing", as such construction designs may alleviate some of the (mostly chromatic) problems associated with masks that rely on glass substrates for mechanical support. Finally, results obtained from our AO coronagraph simulations are provided in the last section. In particular, we find that: (i) apodized masks provide deeper contrast than hard-edge masks when the image quality exceeds 80% Strehl ratio (SR), (ii) above 90% SR, 4th-order band-limited masks provide higher off-axis throughput than Gaussian masks when generating comparable contrast levels, and (iii) below ~90% SR, hard-edge masks may be better suited for high contrast imaging, since they are less susceptible to tip/tilt alignment errors.

Are visual cue masking and removal techniques equivalent for studying perceptual skills in sport?

PubMed

Mecheri, Sami; Gillet, Eric; Thouvarecq, Regis; Leroy, David

2011-01-01

The spatial-occlusion paradigm makes use of two techniques (masking and removing visual cues) to provide information about the anticipatory cues used by viewers. The visual scene resulting from the removal technique appears to be incongruous, but the assumed equivalence of these two techniques is spreading. The present study was designed to address this issue by combining eye-movement recording with the two types of occlusion (removal versus masking) in a tennis serve-return task. Response accuracy and decision onsets were analysed. The results indicated that subjects had longer reaction times under the removal condition, with an identical proportion of correct responses. Also, the removal technique caused the subjects to rely on atypical search patterns. Our findings suggest that, when the removal technique was used, viewers were unable to systematically count on stored memories to help them accomplish the interception task. The persistent failure to question some of the assumptions about the removal technique in applied visual research is highlighted, and suggestions for continued use of the masking technique are advanced.

Removal of bone in CT angiography by multiscale matched mask bone elimination.

PubMed

Gratama van Andel, H A F; Venema, H W; Streekstra, G J; van Straten, M; Majoie, C B L M; den Heeten, G J; Grimbergen, C A

2007-10-01

For clear visualization of vessels in CT angiography (CTA) images of the head and neck using maximum intensity projection (MIP) or volume rendering (VR) bone has to be removed. In the past we presented a fully automatic method to mask the bone [matched mask bone elimination (MMBE)] for this purpose. A drawback is that vessels adjacent to bone may be partly masked as well. We propose a modification, multiscale MMBE, which reduces this problem by using images at two scales: a higher resolution than usual for image processing and a lower resolution to which the processed images are transformed for use in the diagnostic process. A higher in-plane resolution is obtained by the use of a sharper reconstruction kernel. The out-of-plane resolution is improved by deconvolution or by scanning with narrower collimation. The quality of the mask that is used to remove bone is improved by using images at both scales. After masking, the desired resolution for the normal clinical use of the images is obtained by blurring with Gaussian kernels of appropriate widths. Both methods (multiscale and original) were compared in a phantom study and with clinical CTA data sets. With the multiscale approach the width of the strip of soft tissue adjacent to the bone that is masked can be reduced from 1.0 to 0.2 mm without reducing the quality of the bone removal. The clinical examples show that vessels adjacent to bone are less affected and therefore better visible. Images processed with multiscale MMBE have a slightly higher noise level or slightly reduced resolution compared with images processed by the original method and the reconstruction and processing time is also somewhat increased. Nevertheless, multiscale MMBE offers a way to remove bone automatically from CT angiography images without affecting the integrity of the blood vessels. The overall image quality of MIP or VR images is substantially improved relative to images processed with the original MMBE method.

Low cost solar array project cell and module formation research area: Process research of non-CZ silicon material

NASA Technical Reports Server (NTRS)

1981-01-01

Liquid diffusion masks and liquid applied dopants to replace the CVD Silox masking and gaseous diffusion operations specified for forming junctions in the Westinghouse baseline process sequence for producing solar cells from dendritic web silicon were investigated. The baseline diffusion masking and drive processes were compared with those involving direct liquid applications to the dendritic web silicon strips. Attempts were made to control the number of variables by subjecting dendritic web strips cut from a single web crystal to both types of operations. Data generated reinforced earlier conclusions that efficiency levels at least as high as those achieved with the baseline back junction formation process can be achieved using liquid diffusion masks and liquid dopants. The deliveries of dendritic web sheet material and solar cells specified by the current contract were made as scheduled.

Dry etching technologies for the advanced binary film

NASA Astrophysics Data System (ADS)

Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Yoshimori, Tomoaki; Azumano, Hidehito; Muto, Makoto; Nonaka, Mikio

2011-11-01

ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

Adaptive optics full-field OCT: a resolution almost insensitive to aberrations (Conference Presentation)

NASA Astrophysics Data System (ADS)

Xiao, Peng; Fink, Mathias; Boccara, A. Claude

2016-03-01

A Full-Field OCT (FFOCT) setup coupled to a compact transmissive liquid crystal spatial light modulator (LCSLM) is used to induce or correct aberrations and simulate eye examinations. To reduce the system complexity, strict pupil conjugation was abandoned. During our work on quantifying the effect of geometrical aberrations on FFOCT images, we found that the image resolution is almost insensitive to aberrations. Indeed if the object channel PSF is distorted, its interference with the reference channel conserves the main feature of an unperturbed PSF with only a reduction of the signal level. This unique behavior is specific to the use of a spatially incoherent illumination. Based on this, the FFOCT image intensity was used as the metric for our wavefront sensorless correction. Aberration correction was first conducted on an USAF resolution target with the LSCLM as both aberration generator and corrector. A random aberration mask was induced, and the low-order Zernike Modes were corrected sequentially according to the intensity metric function optimization. A Ficus leaf and a fixed mouse brain tissue slice were also imaged to demonstrate the correction of sample self-induced wavefront distortions. After optimization, more structured information appears for the leaf imaging. And the high-signal fiber-like myelin fiber structures were resolved much more clearly after the whole correction process for mouse brain imaging. Our experiment shows the potential of this compact AO-FFOCT system for aberration correction imaging. This preliminary approach that simulates eyes aberrations correction also opens the path to a simple implementation of FFOCT adaptive optics for retinal examinations.

Effects of temporal integration on the shape of visual backward masking functions.

PubMed

Francis, Gregory; Cho, Yang Seok

2008-10-01

Many studies of cognition and perception use a visual mask to explore the dynamics of information processing of a target. Especially important in these applications is the time between the target and mask stimuli. A plot of some measure of target visibility against stimulus onset asynchrony is called a masking function, which can sometimes be monotonic increasing but other times is U-shaped. Theories of backward masking have long hypothesized that temporal integration of the target and mask influences properties of masking but have not connected the influence of integration with the shape of the masking function. With two experiments that vary the spatial properties of the target and mask, the authors provide evidence that temporal integration of the stimuli plays a critical role in determining the shape of the masking function. The resulting data both challenge current theories of backward masking and indicate what changes to the theories are needed to account for the new data. The authors further discuss the implication of the findings for uses of backward masking to explore other aspects of cognition.

Attentional Sensitization of Unconscious Cognition: Task Sets Modulate Subsequent Masked Semantic Priming

ERIC Educational Resources Information Center

Kiefer, Markus; Martens, Ulla

2010-01-01

According to classical theories, automatic processes are autonomous and independent of higher level cognitive influence. In contrast, the authors propose that automatic processing depends on attentional sensitization of task-congruent processing pathways. In 3 experiments, the authors tested this hypothesis with a modified masked semantic priming…

Development of a low-cost x-ray mask for high-aspect-ratio MEM smart structures

NASA Astrophysics Data System (ADS)

Ajmera, Pratul K.; Stadler, Stefan; Abdollahi, Neda

1998-07-01

A cost-effective process with short fabrication time for making x-ray masks for research and development purposes is described here for fabricating high-aspect ratio microelectromechanical structures using synchrotron based x- ray lithography. Microscope cover glass slides as membrane material is described. Slides with an initial thickness of 175 micrometers are etched to a thickness in the range of 10 - 25 micrometers using a diluted HF and buffered hydrofluoric acid solutions. The thinned slides are glued on supportive mask frames and sputtered with a chromium/silver sandwich layer which acts as a plating base layer for the deposition of the gold absorber. The judicial choice of glue and mask frame material are significant parameters in a successful fabrication process. Gold absorber structures are electroplated on the membrane. Calculations are done for contrast and dose ratio obtained in the photoresist after synchrotron radiation as a function of the mask design parameters. Exposure experiments are performed to prove the applicability of the fabricated x-ray mask.

Pre-correction of distorted Bessel-Gauss beams without wavefront detection

NASA Astrophysics Data System (ADS)

Fu, Shiyao; Wang, Tonglu; Zhang, Zheyuan; Zhai, Yanwang; Gao, Chunqing

2017-12-01

By utilizing the property of the phase's rapid solution of the Gerchberg-Saxton algorithm, we experimentally demonstrate a scheme to correct distorted Bessel-Gauss beams resulting from inhomogeneous media as weak turbulent atmosphere with good performance. A probe Gaussian beam is employed and propagates coaxially with the Bessel-Gauss modes through the turbulence. No wavefront sensor but a matrix detector is used to capture the probe Gaussian beams, and then, the correction phase mask is computed through inputting such probe beam into the Gerchberg-Saxton algorithm. The experimental results indicate that both single and multiplexed BG beams can be corrected well, in terms of the improvement in mode purity and the mitigation of interchannel cross talk.

Etching Selectivity of Cr, Fe and Ni Masks on Si & SiO2 Wafers

NASA Astrophysics Data System (ADS)

Garcia, Jorge; Lowndes, Douglas H.

2000-10-01

During this Summer 2000 I joined the Semiconductors and Thin Films group led by Dr. Douglas H. Lowndes at Oak Ridge National Laboratory’s Solid State Division. Our objective was to evaluate the selectivity that Trifluoromethane (CHF3), and Sulfur Hexafluoride (SF6) plasmas have for Si, SiO2 wafers and the Ni, Cr, and Fe masks; being this etching selectivity the ratio of the etching rates of the plasmas for each of the materials. We made use of Silicon and Silicon Dioxide-coated wafers that have Fe, Cr or Ni masks. In the semiconductor field, metal layers are often used as masks to protect layers underneath during processing steps; when these wafers are taken to the dry etching process, both the wafer and the mask layers’ thickness are reduced.

Automatic pattern localization across layout database and photolithography mask

NASA Astrophysics Data System (ADS)

Morey, Philippe; Brault, Frederic; Beisser, Eric; Ache, Oliver; Röth, Klaus-Dieter

2016-03-01

Advanced process photolithography masks require more and more controls for registration versus design and critical dimension uniformity (CDU). The distribution of the measurement points should be distributed all over the whole mask and may be denser in areas critical to wafer overlay requirements. This means that some, if not many, of theses controls should be made inside the customer die and may use non-dedicated patterns. It is then mandatory to access the original layout database to select patterns for the metrology process. Finding hundreds of relevant patterns in a database containing billions of polygons may be possible, but in addition, it is mandatory to create the complete metrology job fast and reliable. Combining, on one hand, a software expertise in mask databases processing and, on the other hand, advanced skills in control and registration equipment, we have developed a Mask Dataprep Station able to select an appropriate number of measurement targets and their positions in a huge database and automatically create measurement jobs on the corresponding area on the mask for the registration metrology system. In addition, the required design clips are generated from the database in order to perform the rendering procedure on the metrology system. This new methodology has been validated on real production line for the most advanced process. This paper presents the main challenges that we have faced, as well as some results on the global performances.

Joint optimization of source, mask, and pupil in optical lithography

NASA Astrophysics Data System (ADS)

Li, Jia; Lam, Edmund Y.

2014-03-01

Mask topography effects need to be taken into consideration for more advanced resolution enhancement techniques in optical lithography. However, rigorous 3D mask model achieves high accuracy at a large computational cost. This work develops a combined source, mask and pupil optimization (SMPO) approach by taking advantage of the fact that pupil phase manipulation is capable of partially compensating for mask topography effects. We first design the pupil wavefront function by incorporating primary and secondary spherical aberration through the coefficients of the Zernike polynomials, and achieve optimal source-mask pair under the condition of aberrated pupil. Evaluations against conventional source mask optimization (SMO) without incorporating pupil aberrations show that SMPO provides improved performance in terms of pattern fidelity and process window sizes.

Low surface energy polymeric release coating for improved contact print lithography

NASA Astrophysics Data System (ADS)

Mancini, David P.; Resnick, Douglas J.; Gehoski, Kathleen A.; Popovich, Laura L.; Chang, Daniel

2002-03-01

Contact printing has been used for decades in many various lithography applications in the microelectronic industry. While vacuum contact printing processes offer sub-micron resolution and high throughput, they often suffer from some important drawbacks. One of the most common problems is degradation in both resolution and defect density which occurs when the same mask si used for multiple exposures without frequent mask cleans. This is largely due to the relatively high surface energy of both quartz and chrome and the tendency of most photoresists to adhere to these surfaces. As a result, when a mask and wafer are pressed into intimate contact, resist will tend to stick to the mask creating a defect on the wafer, effectively propagating defects to subsequent wafers. In this study, DuPont Teflon AF 1601S is used as a photomask coating and evaluated for its ability to act as a release agent and reduce defects while maintaining resolution for multiple exposures. Teflon AF is an amorphous, transparent, low surface energy, polymeric material that can be spin coated into a thin conformal film. Tests have shown that when using an uncoated mask in vacuum contact, resolution of 0.75 micrometers dense lines is severely degraded after less than 10 consecutive exposures. However, when the mask is coated, 0.75 micrometers dense lines were successfully resolved using vacuum contact for over 200 exposures without cleaning. In addition, it has been demonstrated that Teflon AF coatings impart to a mask a self-cleaning capability, since particles tend to stick to the photoresist rather than the mask. A coated mask, which was purposefully contaminated with particulates, resolved 0.75 micrometers dense lines on all but the first wafer of a series of 25 consecutive exposures. The patented mask releases layer process has successfully been demonstrated with a positive novolak resist. Additional data which describes the system chemistry, dilution and coating process, and film morphology are also presented.

Standardisation of information submitted to an endpoint committee for cause of death assignment in a cancer screening trial – lessons learnt from CAP (Cluster randomised triAl of PSA testing for Prostate cancer).

PubMed

Williams, Naomi J; Hill, Elizabeth M; Ng, Siaw Yein; Martin, Richard M; Metcalfe, Chris; Donovan, Jenny L; Evans, Simon; Hughes, Laura J; Davies, Charlotte F; Hamdy, Freddie C; Neal, David E; Turner, Emma L

2015-01-23

In cancer screening trials where the primary outcome is target cancer-specific mortality, the unbiased determination of underlying cause of death (UCD) is crucial. To minimise bias, the UCD should be independently verified by expert reviewers, blinded to death certificate data and trial arm. We investigated whether standardising the information submitted for UCD assignment in a population-based randomised controlled trial of prostate-specific antigen (PSA) testing for prostate cancer reduced the reviewers' ability to correctly guess the trial arm. Over 550 General Practitioner (GP) practices (>415,000 men aged 50-69 years) were cluster-randomised to PSA testing (intervention arm) or the National Health Service (NHS) prostate cancer risk management programme (control arm) between 2001 and 2007. Assignment of UCD was by independent reviews of researcher-written clinical vignettes that masked trial arm and death certificate information. A period of time after the process began (the initial phase), we analysed whether the reviewers could correctly identify trial arm from the vignettes, and the reasons for their choice. This feedback led to further standardisation of information (second phase), after which we re-assessed the extent of correct identification of trial arm. 1099 assessments of 509 vignettes were completed by January 2014. In the initial phase (n = 510 assessments), reviewers were unsure of trial arm in 33% of intervention and 30% of control arm assessments and were influenced by symptoms at diagnosis, PSA test result and study-specific criteria. In the second phase (n = 589), the respective proportions of uncertainty were 45% and 48%. The percentage of cases whereby reviewers were unable to determine the trial arm was greater following the standardisation of information provided in the vignettes. The chances of a correct guess and an incorrect guess were equalised in each arm, following further standardisation. It is possible to mask trial arm from cause of death reviewers, by using their feedback to standardise the information submitted to them. ISRCTN92187251.

Electron-beam Induced Processes and their Applicability to Mask Repair

NASA Astrophysics Data System (ADS)

Boegli, Volker A.; Koops, Hans W. P.; Budach, Michael; Edinger, Klaus; Hoinkis, Ottmar; Weyrauch, Bernd; Becker, Rainer; Schmidt, Rudolf; Kaya, Alexander; Reinhardt, Andreas; Braeuer, Stephan; Honold, Heinz; Bihr, Johannes; Greiser, Jens; Eisenmann, Michael

2002-12-01

The applicability of electron-beam induced chemical reactions to mask repair is investigated. To achieve deposition and chemical etching with a focused electron-beam system, it is required to disperse chemicals in a molecular beam to the area of interest with a well-defined amount of molecules and monolayers per second. For repair of opaque defects the precursor gas reacts with the absorber material of the mask and forms a volatile reaction product, which leaves the surface. In this way the surface atoms are removed layer by layer. For clear defect repair, additional material, which is light absorbing in the UV, is deposited onto the defect area. This material is rendered as a nanocrystalline deposit from metal containing precursors. An experimental electron-beam mask repair system is developed and used to perform exploratory work applicable to photo mask, EUV mask, EPL and LEEPL stencil mask repair. The tool is described and specific repair actions are demonstrated. Platinum deposited features with lateral dimensions down to 20 nm demonstrate the high resolution obtainable with electron beam induced processes, while AFM and AIMS measurements indicate, that specifications for mask repair at the 70 nm device node can be met. In addition, examples of etching quartz and TaN are given.

Communication masking in marine mammals: A review and research strategy.

PubMed

Erbe, Christine; Reichmuth, Colleen; Cunningham, Kane; Lucke, Klaus; Dooling, Robert

2016-02-15

Underwater noise, whether of natural or anthropogenic origin, has the ability to interfere with the way in which marine mammals receive acoustic signals (i.e., for communication, social interaction, foraging, navigation, etc.). This phenomenon, termed auditory masking, has been well studied in humans and terrestrial vertebrates (in particular birds), but less so in marine mammals. Anthropogenic underwater noise seems to be increasing in parts of the world's oceans and concerns about associated bioacoustic effects, including masking, are growing. In this article, we review our understanding of masking in marine mammals, summarise data on marine mammal hearing as they relate to masking (including audiograms, critical ratios, critical bandwidths, and auditory integration times), discuss masking release processes of receivers (including comodulation masking release and spatial release from masking) and anti-masking strategies of signalers (e.g. Lombard effect), and set a research framework for improved assessment of potential masking in marine mammals. Copyright © 2015 The Authors. Published by Elsevier Ltd.. All rights reserved.

Modeling of thermomechanical changes of extreme-ultraviolet mask and their dependence on absorber variation

NASA Astrophysics Data System (ADS)

Ban, Chung-Hyun; Park, Eun-Sang; Park, Jae-Hun; Oh, Hye-Keun

2018-06-01

Thermal and structural deformation of extreme-ultraviolet lithography (EUVL) masks during the exposure process may become important issues as these masks are subject to rigorous image placement and flatness requirements. The reflective masks used for EUVL absorb energy during exposure, and the temperature of the masks rises as a result. This can cause thermomechanical deformation that can reduce the pattern quality. The use of very thick low-thermal-expansion substrate materials (LTEMs) may reduce energy absorption, but they do not completely eliminate mask deformation. Therefore, it is necessary to predict and optimize the effects of energy transferred from the extreme-ultraviolet (EUV) light source and the resultant patterns of structured EUV masks with complex multilayers. Our study shows that heat accumulates in the masks as exposure progresses. It has been found that a higher absorber ratio (pattern density) applied to the patterning of EUV masks exacerbates the problem, especially in masks with more complex patterns.

Normalizing CO2 in chronic hyperventilation by means of a novel breathing mask: a pilot study.

PubMed

Johansen, Troels; Jack, Sandy; Dahl, Ronald

2013-10-01

Chronic idiopathic hyperventilation (CIH) is a form of dysfunctional breathing that has proven hard to treat effectively. To perform a preliminary test of the hypothesis that by periodically inducing normocapnia over several weeks, it would be possible to raise the normal resting level of CO2 and achieve a reduction of symptoms. Six CIH patients were treated 2 h a day for 4 weeks with a novel breathing mask. The mask was used to induce normocapnia in these chronically hypocapnic patients. Capillary blood gases and acid/base parameters [capillary CO2 tension (PcapCO2 ), pH, and standard base excess (SBE)] were measured at baseline and once each week at least 3 h after mask use, as well as spirometric values, breath-holding tolerance and hyperventilation symptoms as per the Nijmegen Questionnaire (NQ). The mask treatment resulted in a significant increase of resting PcapCO2 (+0.45 kPa, P = 0.028), a moderate increase in SBE (+1.4 mEq/L, P = 0.035) and a small reduction in daily symptoms (-3.8 NQ units, P = 0.046). The effect was most pronounced in the first 2 weeks of treatment. By inducing normocapnia with the breathing mask 2 h a day for 4 weeks, the normal resting CO2 and acid/base levels in chronically hyperventilating patients were partially corrected, and symptoms were reduced. © 2013 John Wiley & Sons Ltd.

Implicit Semantic Perception in Object Substitution Masking

ERIC Educational Resources Information Center

Goodhew, Stephanie C.; Visser, Troy A. W.; Lipp, Ottmar V.; Dux, Paul E.

2011-01-01

Decades of research on visual perception has uncovered many phenomena, such as binocular rivalry, backward masking, and the attentional blink, that reflect "failures of consciousness". Although stimuli do not reach awareness in these paradigms, there is evidence that they nevertheless undergo semantic processing. Object substitution masking (OSM),…

Deductive Derivation and Turing-Computerization of Semiparametric Efficient Estimation

PubMed Central

Frangakis, Constantine E.; Qian, Tianchen; Wu, Zhenke; Diaz, Ivan

2015-01-01

Summary Researchers often seek robust inference for a parameter through semiparametric estimation. Efficient semiparametric estimation currently requires theoretical derivation of the efficient influence function (EIF), which can be a challenging and time-consuming task. If this task can be computerized, it can save dramatic human effort, which can be transferred, for example, to the design of new studies. Although the EIF is, in principle, a derivative, simple numerical differentiation to calculate the EIF by a computer masks the EIF’s functional dependence on the parameter of interest. For this reason, the standard approach to obtaining the EIF relies on the theoretical construction of the space of scores under all possible parametric submodels. This process currently depends on the correctness of conjectures about these spaces, and the correct verification of such conjectures. The correct guessing of such conjectures, though successful in some problems, is a nondeductive process, i.e., is not guaranteed to succeed (e.g., is not computerizable), and the verification of conjectures is generally susceptible to mistakes. We propose a method that can deductively produce semiparametric locally efficient estimators. The proposed method is computerizable, meaning that it does not need either conjecturing, or otherwise theoretically deriving the functional form of the EIF, and is guaranteed to produce the desired estimates even for complex parameters. The method is demonstrated through an example. PMID:26237182

Deductive derivation and turing-computerization of semiparametric efficient estimation.

PubMed

Frangakis, Constantine E; Qian, Tianchen; Wu, Zhenke; Diaz, Ivan

2015-12-01

Researchers often seek robust inference for a parameter through semiparametric estimation. Efficient semiparametric estimation currently requires theoretical derivation of the efficient influence function (EIF), which can be a challenging and time-consuming task. If this task can be computerized, it can save dramatic human effort, which can be transferred, for example, to the design of new studies. Although the EIF is, in principle, a derivative, simple numerical differentiation to calculate the EIF by a computer masks the EIF's functional dependence on the parameter of interest. For this reason, the standard approach to obtaining the EIF relies on the theoretical construction of the space of scores under all possible parametric submodels. This process currently depends on the correctness of conjectures about these spaces, and the correct verification of such conjectures. The correct guessing of such conjectures, though successful in some problems, is a nondeductive process, i.e., is not guaranteed to succeed (e.g., is not computerizable), and the verification of conjectures is generally susceptible to mistakes. We propose a method that can deductively produce semiparametric locally efficient estimators. The proposed method is computerizable, meaning that it does not need either conjecturing, or otherwise theoretically deriving the functional form of the EIF, and is guaranteed to produce the desired estimates even for complex parameters. The method is demonstrated through an example. © 2015, The International Biometric Society.

First 65nm tape-out using inverse lithography technology (ILT)

NASA Astrophysics Data System (ADS)

Hung, Chi-Yuan; Zhang, Bin; Tang, Deming; Guo, Eric; Pang, Linyong; Liu, Yong; Moore, Andrew; Wang, Kechang

2005-11-01

This paper presents SMIC's first 65nm tape out results, in particularly, using ILT. ILT mathematically determines the mask features that produce the desired on-wafer results with best wafer pattern fidelity, largest process window or both. SMIC applied it to its first 65nm tape-out to study ILT performance and benefits for deep sub-wavelength lithography. SMIC selected 3 SRAM designs as the first test case, because SRAM bit-cells contain features which are challenging lithographically. Mask patterns generated from both conventional OPC and ILT were placed on the mask side-by-side. Mask manufacturability (including fracturing, writing time, inspection, and metrology) and wafer print performance of ILT were studied. The results demonstrated that ILT achieved better CD accuracy, produced substantially larger process window than conventional OPC, and met SMIC's 65nm process window requirements.

Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming

DOEpatents

Li, Ting [Ventura, CA

2011-04-26

The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE process is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device.

Modeling Spatial and Temporal Aspects of Visual Backward Masking

ERIC Educational Resources Information Center

Hermens, Frouke; Luksys, Gediminas; Gerstner, Wulfram; Herzog, Michael H.; Ernst, Udo

2008-01-01

Visual backward masking is a versatile tool for understanding principles and limitations of visual information processing in the human brain. However, the mechanisms underlying masking are still poorly understood. In the current contribution, the authors show that a structurally simple mathematical model can explain many spatial and temporal…

Masked Repetition Priming Treatment for Anomia

ERIC Educational Resources Information Center

Silkes, JoAnn P.

2018-01-01

Purpose: Masked priming has been suggested as a way to directly target implicit lexical retrieval processes in aphasia. This study was designed to investigate repeated use of masked repetition priming to improve picture naming in individuals with anomia due to aphasia. Method: A single-subject, multiple-baseline design was used across 6 people…

Early, Equivalent ERP Masked Priming Effects for Regular and Irregular Morphology

ERIC Educational Resources Information Center

Morris, Joanna; Stockall, Linnaea

2012-01-01

Converging evidence from behavioral masked priming (Rastle & Davis, 2008), EEG masked priming (Morris, Frank, Grainger, & Holcomb, 2007) and single word MEG (Zweig & Pylkkanen, 2008) experiments has provided robust support for a model of lexical processing which includes an early, automatic, visual word form based stage of morphological parsing…

Sandwich masking eliminates both visual awareness of faces and face-specific brain activity through a feedforward mechanism.

PubMed

Harris, Joseph A; Wu, Chien-Te; Woldorff, Marty G

2011-06-07

It is generally agreed that considerable amounts of low-level sensory processing of visual stimuli can occur without conscious awareness. On the other hand, the degree of higher level visual processing that occurs in the absence of awareness is as yet unclear. Here, event-related potential (ERP) measures of brain activity were recorded during a sandwich-masking paradigm, a commonly used approach for attenuating conscious awareness of visual stimulus content. In particular, the present study used a combination of ERP activation contrasts to track both early sensory-processing ERP components and face-specific N170 ERP activations, in trials with versus without awareness. The electrophysiological measures revealed that the sandwich masking abolished the early face-specific N170 neural response (peaking at ~170 ms post-stimulus), an effect that paralleled the abolition of awareness of face versus non-face image content. Furthermore, however, the masking appeared to render a strong attenuation of earlier feedforward visual sensory-processing signals. This early attenuation presumably resulted in insufficient information being fed into the higher level visual system pathways specific to object category processing, thus leading to unawareness of the visual object content. These results support a coupling of visual awareness and neural indices of face processing, while also demonstrating an early low-level mechanism of interference in sandwich masking.

Quantitative Characterizations of Ultrashort Echo (UTE) Images for Supporting Air-Bone Separation in the Head

PubMed Central

Hsu, Shu-Hui; Cao, Yue; Lawrence, Theodore S.; Tsien, Christina; Feng, Mary; Grodzki, David M.; Balter, James M.

2015-01-01

Accurate separation of air and bone is critical for creating synthetic CT from MRI to support Radiation Oncology workflow. This study compares two different ultrashort echo-time sequences in the separation of air from bone, and evaluates post-processing methods that correct intensity nonuniformity of images and account for intensity gradients at tissue boundaries to improve this discriminatory power. CT and MRI scans were acquired on 12 patients under an institution review board-approved prospective protocol. The two MRI sequences tested were ultra-short TE imaging using 3D radial acquisition (UTE), and using pointwise encoding time reduction with radial acquisition (PETRA). Gradient nonlinearity correction was applied to both MR image volumes after acquisition. MRI intensity nonuniformity was corrected by vendor-provided normalization methods, and then further corrected using the N4itk algorithm. To overcome the intensity-gradient at air-tissue boundaries, spatial dilations, from 0 to 4 mm, were applied to threshold-defined air regions from MR images. Receiver operating characteristic (ROC) analyses, by comparing predicted (defined by MR images) versus “true” regions of air and bone (defined by CT images), were performed with and without residual bias field correction and local spatial expansion. The post-processing corrections increased the areas under the ROC curves (AUC) from 0.944 ± 0.012 to 0.976 ± 0.003 for UTE images, and from 0.850 ± 0.022 to 0.887 ± 0.012 for PETRA images, compared to without corrections. When expanding the threshold-defined air volumes, as expected, sensitivity of air identification decreased with an increase in specificity of bone discrimination, but in a non-linear fashion. A 1-mm air mask expansion yielded AUC increases of 1% and 4% for UTE and PETRA images, respectively. UTE images had significantly greater discriminatory power in separating air from bone than PETRA images. Post-processing strategies improved the discriminatory power of air from bone for both UTE and PETRA images, and reduced the difference between the two imaging sequences. Both postprocessed UTE and PETRA images demonstrated sufficient power to discriminate air from bone to support synthetic CT generation from MRI data. PMID:25776205

SU-D-18C-02: Feasibility of Using a Short ASL Scan for Calibrating Cerebral Blood Flow Obtained From DSC-MRI

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, P; Chang, T; Huang, K

2014-06-01

Purpose: This study aimed to evaluate the feasibility of using a short arterial spin labeling (ASL) scan for calibrating the dynamic susceptibility contrast- (DSC-) MRI in a group of patients with internal carotid artery stenosis. Methods: Six patients with unilateral ICA stenosis enrolled in the study on a 3T clinical MRI scanner. The ASL-cerebral blood flow (-CBF) maps were calculated by averaging different number of dynamic points (N=1-45) acquired by using a Q2TIPS sequence. For DSC perfusion analysis, arterial input function was selected to derive the relative cerebral blood flow (rCBF) map and the delay (Tmax) map. Patient-specific CF wasmore » calculated from the mean ASL- and DSC-CBF obtained from three different masks: (1)Tmax< 3s, (2)combined gray matter mask with mask 1, (3)mask 2 with large vessels removed. One CF value was created for each number of averages by using each of the three masks for calibrating the DSC-CBF map. The CF value of the largest number of averages (NL=45) was used to determine the acceptable range(< 10%, <15%, and <20%) of CF values corresponding to the minimally acceptable number of average (NS) for each patient. Results: Comparing DSC CBF maps corrected by CF values of NL (CBFL) in ACA, MCA and PCA territories, all masks resulted in smaller CBF on the ipsilateral side than the contralateral side of the MCA territory(p<.05). The values obtained from mask 1 were significantly different than the mask 3(p<.05). Using mask 3, the medium values of Ns were 4(<10%), 2(<15%) and 2(<20%), with the worst case scenario (maximum Ns) of 25, 4, and 4, respectively. Conclusion: This study found that reliable calibration of DSC-CBF can be achieved from a short pulsed ASL scan. We suggested use a mask based on the Tmax threshold, the inclusion of gray matter only and the exclusion of large vessels for performing the calibration.« less

Paradoxical psychometric functions (“swan functions”) are explained by dilution masking in four stimulus dimensions

PubMed Central

Baker, Daniel H.; Meese, Tim S.; Georgeson, Mark A.

2013-01-01

The visual system dissects the retinal image into millions of local analyses along numerous visual dimensions. However, our perceptions of the world are not fragmentary, so further processes must be involved in stitching it all back together. Simply summing up the responses would not work because this would convey an increase in image contrast with an increase in the number of mechanisms stimulated. Here, we consider a generic model of signal combination and counter-suppression designed to address this problem. The model is derived and tested for simple stimulus pairings (e.g. A + B), but is readily extended over multiple analysers. The model can account for nonlinear contrast transduction, dilution masking, and signal combination at threshold and above. It also predicts nonmonotonic psychometric functions where sensitivity to signal A in the presence of pedestal B first declines with increasing signal strength (paradoxically dropping below 50% correct in two-interval forced choice), but then rises back up again, producing a contour that follows the wings and neck of a swan. We looked for and found these “swan” functions in four different stimulus dimensions (ocularity, space, orientation, and time), providing some support for our proposal. PMID:23799185

Multi-shaped beam: development status and update on lithography results

NASA Astrophysics Data System (ADS)

Slodowski, Matthias; Doering, Hans-Joachim; Dorl, Wolfgang; Stolberg, Ines A.

2011-04-01

According to the ITRS [1] photo mask is a significant challenge for the 22nm technology node requirements and beyond. Mask making capability and cost escalation continue to be critical for future lithography progress. On the technological side mask specifications and complexity have increased more quickly than the half-pitch requirements on the wafer designated by the roadmap due to advanced optical proximity correction and double patterning demands. From the economical perspective mask costs have significantly increased each generation, in which mask writing represents a major portion. The availability of a multi-electron-beam lithography system for mask write application is considered a potential solution to overcome these challenges [2, 3]. In this paper an update of the development status of a full-package high-throughput multi electron-beam writer, called Multi Shaped Beam (MSB), will be presented. Lithography performance results, which are most relevant for mask writing applications, will be disclosed. The MSB technology is an evolutionary development of the matured single Variable Shaped Beam (VSB) technology. An arrangement of Multi Deflection Arrays (MDA) allows operation with multiple shaped beams of variable size, which can be deflected and controlled individually [4]. This evolutionary MSB approach is associated with a lower level of risk and a relatively short time to implementation compared to the known revolutionary concepts [3, 5, 6]. Lithography performance is demonstrated through exposed pattern. Further details of the substrate positioning platform performance will be disclosed. It will become apparent that the MSB operational mode enables lithography on the same and higher performance level compared to single VSB and that there are no specific additional lithography challenges existing beside those which have already been addressed [1].

Development of template and mask replication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Brooks, Cynthia; Selinidis, Kosta; Doyle, Gary; Brown, Laura; LaBrake, Dwayne; Resnick, Douglas J.; Sreenivasan, S. V.

2010-09-01

The Jet and Flash Imprint Lithography (J-FILTM)1-7 process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105 imprints. This suggests that tens of thousands of templates/masks will be required. It is not feasible to employ electronbeam patterning directly to deliver these volumes. Instead, a "master" template - created by directly patterning with an electron-beam tool - will be replicated many times with an imprint lithography tool to produce the required supply of "working" templates/masks. In this paper, we review the development of the pattern transfer process for both template and mask replicas. Pattern transfer of resolutions down to 25nm has been demonstrated for bit patterned media replication. In addition, final resolution on a semiconductor mask of 28nm has been confirmed. The early results on both etch depth and CD uniformity are promising, but more extensive work is required to characterize the pattern transfer process.

Backward masked fearful faces enhance contralateral occipital cortical activity for visual targets within the spotlight of attention

PubMed Central

Reinke, Karen S.; LaMontagne, Pamela J.; Habib, Reza

2011-01-01

Spatial attention has been argued to be adaptive by enhancing the processing of visual stimuli within the ‘spotlight of attention’. We previously reported that crude threat cues (backward masked fearful faces) facilitate spatial attention through a network of brain regions consisting of the amygdala, anterior cingulate and contralateral visual cortex. However, results from previous functional magnetic resonance imaging (fMRI) dot-probe studies have been inconclusive regarding a fearful face-elicited contralateral modulation of visual targets. Here, we tested the hypothesis that the capture of spatial attention by crude threat cues would facilitate processing of subsequently presented visual stimuli within the masked fearful face-elicited ‘spotlight of attention’ in the contralateral visual cortex. Participants performed a backward masked fearful face dot-probe task while brain activity was measured with fMRI. Masked fearful face left visual field trials enhanced activity for spatially congruent targets in the right superior occipital gyrus, fusiform gyrus and lateral occipital complex, while masked fearful face right visual field trials enhanced activity in the left middle occipital gyrus. These data indicate that crude threat elicited spatial attention enhances the processing of subsequent visual stimuli in contralateral occipital cortex, which may occur by lowering neural activation thresholds in this retinotopic location. PMID:20702500

Statistical mechanics of image processing by digital halftoning

NASA Astrophysics Data System (ADS)

Inoue, Jun-Ichi; Norimatsu, Wataru; Saika, Yohei; Okada, Masato

2009-03-01

We consider the problem of digital halftoning (DH). The DH is an image processing representing each grayscale in images in terms of black and white dots, and it is achieved by making use of the threshold dither mask, namely, each pixel is determined as black if the grayscale pixel is greater than or equal to the mask value and as white vice versa. To determine the mask for a given grayscale image, we assume that human-eyes might recognize the BW dots as the corresponding grayscale by linear filters. Then, the Hamiltonian is constructed as a distance between the original and recognized images which is written in terms of the mask. Finding the ground state of the Hamiltonian via deterministic annealing, we obtain the optimal mask and the BW dots simultaneously. From the spectrum analysis, we find that the BW dots are desirable from the view point of human-eyes modulation properties. We also show that the lower bound of the mean square error for the inverse process of the DH is minimized on the Nishimori line which is well-known in the research field of spin glasses.

Method for growing low defect, high purity crystalline layers utilizing lateral overgrowth of a patterned mask

NASA Technical Reports Server (NTRS)

Morrison, Andrew D. (Inventor); Daud, Taher (Inventor)

1986-01-01

A method for growing a high purity, low defect layer of semiconductor is described. This method involves depositing a patterned mask of a material impervious to impurities of the semiconductor on a surface of a blank. When a layer of semiconductor is grown on the mask, the semiconductor will first grow from the surface portions exposed by the openings in the mask and will bridge the connecting portions of the mask to form a continuous layer having improved purity, since only the portions overlying the openings are exposed to defects and impurities. The process can be iterated and the mask translated to further improve the quality of grown layers.

The study of CD side to side error in line/space pattern caused by post-exposure bake effect

NASA Astrophysics Data System (ADS)

Huang, Jin; Guo, Eric; Ge, Haiming; Lu, Max; Wu, Yijun; Tian, Mingjing; Yan, Shichuan; Wang, Ran

2016-10-01

In semiconductor manufacturing, as the design rule has decreased, the ITRS roadmap requires crucial tighter critical dimension (CD) control. CD uniformity is one of the necessary parameters to assure good performance and reliable functionality of any integrated circuit (IC) [1] [2], and towards the advanced technology nodes, it is a challenge to control CD uniformity well. The study of corresponding CD Uniformity by tuning Post-Exposure bake (PEB) and develop process has some significant progress[3], but CD side to side error happening to some line/space pattern are still found in practical application, and the error has approached to over the uniformity tolerance. After details analysis, even though use several developer types, the CD side to side error has not been found significant relationship to the developing. In addition, it is impossible to correct the CD side to side error by electron beam correction as such error does not appear in all Line/Space pattern masks. In this paper the root cause of CD side to side error is analyzed and the PEB module process are optimized as a main factor for improvement of CD side to side error.

Ion beam deposition system for depositing low defect density extreme ultraviolet mask blanks

NASA Astrophysics Data System (ADS)

Jindal, V.; Kearney, P.; Sohn, J.; Harris-Jones, J.; John, A.; Godwin, M.; Antohe, A.; Teki, R.; Ma, A.; Goodwin, F.; Weaver, A.; Teora, P.

2012-03-01

Extreme ultraviolet lithography (EUVL) is the leading next-generation lithography (NGL) technology to succeed optical lithography at the 22 nm node and beyond. EUVL requires a low defect density reflective mask blank, which is considered to be one of the top two critical technology gaps for commercialization of the technology. At the SEMATECH Mask Blank Development Center (MBDC), research on defect reduction in EUV mask blanks is being pursued using the Veeco Nexus deposition tool. The defect performance of this tool is one of the factors limiting the availability of defect-free EUVL mask blanks. SEMATECH identified the key components in the ion beam deposition system that is currently impeding the reduction of defect density and the yield of EUV mask blanks. SEMATECH's current research is focused on in-house tool components to reduce their contributions to mask blank defects. SEMATECH is also working closely with the supplier to incorporate this learning into a next-generation deposition tool. This paper will describe requirements for the next-generation tool that are essential to realize low defect density EUV mask blanks. The goal of our work is to enable model-based predictions of defect performance and defect improvement for targeted process improvement and component learning to feed into the new deposition tool design. This paper will also highlight the defect reduction resulting from process improvements and the restrictions inherent in the current tool geometry and components that are an impediment to meeting HVM quality EUV mask blanks will be outlined.

Improvements to Lunar BRDF-Corrected Nighttime Satellite Imagery: Uses and Applications

NASA Technical Reports Server (NTRS)

Cole, Tony A.; Molthan, Andrew L.; Schultz, Lori A.; Roman, Miguel O.; Wanik, David W.

2016-01-01

Observations made by the VIIRS day/night band (DNB) provide daily, nighttime measurements to monitor Earth surface processes.However, these observations are impacted by variations in reflected solar radiation on the moon's surface. As the moon transitions from new to full phase, increasing radiance is reflected to the Earth's surface and contributes additional reflected moonlight from clouds and land surface, in addition to emissions from other light sources observed by the DNB. The introduction of a bi-directional reflectance distribution function (BRDF) algorithm serves to remove these lunar variations and normalize observed radiances. Provided by the Terrestrial Information Systems Laboratory at Goddard Space Flight Center, a 1 km gridded lunar BRDF-corrected DNB product and VIIRS cloud mask can be used for a multitude of nighttime applications without influence from the moon. Such applications include the detection of power outages following severe weather events using pre-and post-event DNB imagery, as well as the identification of boat features to curtail illegal fishing practices. This presentation will provide context on the importance of the lunar BRDF correction algorithm and explore the aforementioned uses of this improved DNB product for applied science applications.

OPC for curved designs in application to photonics on silicon

NASA Astrophysics Data System (ADS)

Orlando, Bastien; Farys, Vincent; Schneider, Loïc.; Cremer, Sébastien; Postnikov, Sergei V.; Millequant, Matthieu; Dirrenberger, Mathieu; Tiphine, Charles; Bayle, Sébastian; Tranquillin, Céline; Schiavone, Patrick

2016-03-01

Today's design for photonics devices on silicon relies on non-Manhattan features such as curves and a wide variety of angles with minimum feature size below 100nm. Industrial manufacturing of such devices requires optimized process window with 193nm lithography. Therefore, Resolution Enhancement Techniques (RET) that are commonly used for CMOS manufacturing are required. However, most RET algorithms are based on Manhattan fragmentation (0°, 45° and 90°) which can generate large CD dispersion on masks for photonic designs. Industrial implementation of RET solutions to photonic designs is challenging as most currently available OPC tools are CMOS-oriented. Discrepancy from design to final results induced by RET techniques can lead to lower photonic device performance. We propose a novel sizing algorithm allowing adjustment of design edge fragments while preserving the topology of the original structures. The results of the algorithm implementation in the rule based sizing, SRAF placement and model based correction will be discussed in this paper. Corrections based on this novel algorithm were applied and characterized on real photonics devices. The obtained results demonstrate the validity of the proposed correction method integrated in Inscale software of Aselta Nanographics.

Improvements to Lunar BRDF-Corrected Nighttime Satellite Imagery: Uses and Applications

NASA Astrophysics Data System (ADS)

Cole, T.; Molthan, A.; Schultz, L. A.; Roman, M. O.; Wanik, D. W.

2016-12-01

Observations made by the VIIRS day/night band (DNB) provide daily, nighttime measurements to monitor Earth surface processes. However, these observations are impacted by variations in reflected solar radiation on the moon's surface. As the moon transitions from new to full phase, increasing radiance is reflected to the Earth's surface and contributes additional reflected moonlight from clouds and land surface, in addition to emissions from other light sources observed by the DNB. The introduction of a bi-directional reflectance distribution function (BRDF) algorithm serves to remove these lunar variations and normalize observed radiances. Provided by the Terrestrial Information Systems Laboratory at Goddard Space Flight Center, a 1 km gridded lunar BRDF-corrected DNB product and VIIRS cloud mask can be used for a multitude of nighttime applications without influence from the moon. Such applications include the detection of power outages following severe weather events using pre- and post-event DNB imagery, as well as the identification of boat features to curtail illegal fishing practices. This presentation will provide context on the importance of the lunar BRDF correction algorithm and explore the aforementioned uses of this improved DNB product for applied science applications.

SeaWiFS technical report series. Volume 13: Case studies for SeaWiFS calibration and validation, part 1

NASA Technical Reports Server (NTRS)

Hooker, Stanford B. (Editor); Firestone, Elaine R. (Editor); Mcclain, Charles R.; Comiso, Josefino C.; Fraser, Robert S.; Firestone, James K.; Schieber, Brian D.; Yeh, Eueng-Nan; Arrigo, Kevin R.; Sullivan, Cornelius W.

1994-01-01

Although the Sea-viewing Wide Field-of-view Sensor (SeaWiFS) Calibration and Validation Program relies on the scientific community for the collection of bio-optical and atmospheric correction data as well as for algorithm development, it does have the responsibility for evaluating and comparing the algorithms and for ensuring that the algorithms are properly implemented within the SeaWiFS Data Processing System. This report consists of a series of sensitivity and algorithm (bio-optical, atmospheric correction, and quality control) studies based on Coastal Zone Color Scanner (CZCS) and historical ancillary data undertaken to assist in the development of SeaWiFS specific applications needed for the proper execution of that responsibility. The topics presented are as follows: (1) CZCS bio-optical algorithm comparison, (2) SeaWiFS ozone data analysis study, (3) SeaWiFS pressure and oxygen absorption study, (4) pixel-by-pixel pressure and ozone correction study for ocean color imagery, (5) CZCS overlapping scenes study, (6) a comparison of CZCS and in situ pigment concentrations in the Southern Ocean, (7) the generation of ancillary data climatologies, (8) CZCS sensor ringing mask comparison, and (9) sun glint flag sensitivity study.

Time-Frequency Masking for Speech Separation and Its Potential for Hearing Aid Design

PubMed Central

Wang, DeLiang

2008-01-01

A new approach to the separation of speech from speech-in-noise mixtures is the use of time-frequency (T-F) masking. Originated in the field of computational auditory scene analysis, T-F masking performs separation in the time-frequency domain. This article introduces the T-F masking concept and reviews T-F masking algorithms that separate target speech from either monaural or binaural mixtures, as well as microphone-array recordings. The review emphasizes techniques that are promising for hearing aid design. This article also surveys recent studies that evaluate the perceptual effects of T-F masking techniques, particularly their effectiveness in improving human speech recognition in noise. An assessment is made of the potential benefits of T-F masking methods for the hearing impaired in light of the processing constraints of hearing aids. Finally, several issues pertinent to T-F masking are discussed. PMID:18974204

Fabrication of rectangular cross-sectional microchannels on PMMA with a CO2 laser and underwater fabricated copper mask

NASA Astrophysics Data System (ADS)

Prakash, Shashi; Kumar, Subrata

2017-09-01

CO2 lasers are commonly used for fabricating polymer based microfluidic devices. Despite several key advantages like low cost, time effectiveness, easy to operate and no requirement of clean room facility, CO2 lasers suffer from few disadvantages like thermal bulging, improper dimensional control, difficulty to produce microchannels of other than Gaussian cross sectional shapes and inclined surface walls. Many microfluidic devices require square or rectangular cross-sections which are difficult to produce using normal CO2 laser procedures. In this work, a thin copper sheet of 40 μm was used as a mask above the PMMA (Polymethyl-methacrylate) substrate while fabricating the microchannels utilizing the raster scanning feature of the CO2 lasers. Microchannels with different width dimensions were fabricated utilizing a CO2 laser in with mask and without-mask conditions. A comparison of both the fabricating process has been made. It was found that microchannels with U shape cross section and rectangular cross-section can efficiently be produced using the with mask technique. In addition to this, this technique can provide perfect dimensional control and better surface quality of the microchannel walls. Such a microchannel fabrication process do not require any post-processing. The fabrication of mask using a nanosecond fiber laser has been discussed in details. An underwater laser fabrication method was adopted to overcome heat related defects in mask preparation. Overall, the technique was found to be easy to adopt and significant improvements were observed in microchannel fabrication.

Application of the unified mask data format based on OASIS for VSB EB writers

NASA Astrophysics Data System (ADS)

Suzuki, Toshio; Hirumi, Junji; Suga, Osamu

2005-11-01

Mask data preparation (MDP) for modern mask manufacturing becomes a complex process because many kinds of EB data formats are used in mask makers and EB data files continue to become bigger by the application of RET. Therefore we developed a unified mask pattern data format named "OASIS.VSB1" and a job deck format named "MALY2" for Variable-Shaped-Beam (VSB) EB writers. OASIS.VSB is the mask pattern data format based on OASISTM 3 (Open Artwork System Interchange Standard) released as a successive format to GDSII by SEMI. We defined restrictions on OASIS for VSB EB writers to input OASIS.VSB data directly to VSB EB writers just like the native EB data. OASIS.VSB specification and MALY specification have been disclosed to the public and will become a SEMI standard in the near future. We started to promote the spread activities of OASIS.VSB and MALY. For practical use of OASIS.VSB and MALY, we are discussing the infrastructure system of MDP processing using OASIS.VSB and MALY with mask makers, VSB EB makers, and device makers. We are also discussing the tools for the infrastructure system with EDA vendors. The infrastructure system will enable TAT, the man-hour, and the cost in MDP to be reduced. In this paper, we propose the plan of the infrastructure system of MDP processing using OASIS.VSB and MALY as an application of OASIS.VSB and MALY.

Less is More: Neural Activity During Very Brief and Clearly Visible Exposure to Phobic Stimuli

PubMed Central

Siegel, Paul; Warren, Richard; Wang, Zhishun; Yang, Jie; Cohen, Don; Anderson, Jason F.; Murray, Lilly; Peterson, Bradley S.

2017-01-01

Research on automatic processes in emotion has focused almost exclusively on the provocation of fear responses. We have shown, in contrast, that the repeated presentation of masked feared images reduces avoidance of a live tarantula by spider-phobic participants. We investigated the neural basis for these adaptive effects of masked exposure. We identified 21 spider-phobic and 21 control participants using a psychiatric interview, fear questionnaire, and approach behavior towards a live tarantula. They received each of three conditions: (1) very brief exposure (VBE) to masked images of spiders; (2) clearly visible exposure (CVE) to spiders; and (3) masked images of flowers (control). Only VBE to masked spiders generated neural activity more strongly in phobic than in control participants, within subcortical fear, attention, higher-order language, and vision systems. Counter-intuitively, CVE to the same spiders generated stronger neural activity in control rather than phobic participants within these and other systems. VBE activated regions that support fear processing in phobic participants without causing them to experience fear consciously. CVE, by contrast, deactivated regions supporting fear regulation and caused phobic participants to experience fear. Activations by CVE to spiders correlated with fear ratings - explicit fear. Activations by VBE to masked spiders correlated with color-naming interference of spider words – implicit fear. These multiple dissociations between the effects of VBE and CVE to spiders suggest that limiting awareness of exposure to phobic stimuli through visual masking paradoxically facilitates their processing, while simultaneously minimizing the experience of fear. PMID:28165171

Physical resist models and their calibration: their readiness for accurate EUV lithography simulation

NASA Astrophysics Data System (ADS)

Klostermann, U. K.; Mülders, T.; Schmöller, T.; Lorusso, G. F.; Hendrickx, E.

2010-04-01

In this paper, we discuss the performance of EUV resist models in terms of predictive accuracy, and we assess the readiness of the corresponding model calibration methodology. The study is done on an extensive OPC data set collected at IMEC for the ShinEtsu resist SEVR-59 on the ASML EUV Alpha Demo Tool (ADT), with the data set including more than thousand CD values. We address practical aspects such as the speed of calibration and selection of calibration patterns. The model is calibrated on 12 process window data series varying in pattern width (32, 36, 40 nm), orientation (H, V) and pitch (dense, isolated). The minimum measured feature size at nominal process condition is a 32 nm CD at a dense pitch of 64 nm. Mask metrology is applied to verify and eventually correct nominal width of the drawn CD. Cross-sectional SEM information is included in the calibration to tune the simulated resist loss and sidewall angle. The achieved calibration RMS is ~ 1.0 nm. We show what elements are important to obtain a well calibrated model. We discuss the impact of 3D mask effects on the Bossung tilt. We demonstrate that a correct representation of the flare level during the calibration is important to achieve a high predictability at various flare conditions. Although the model calibration is performed on a limited subset of the measurement data (one dimensional structures only), its accuracy is validated based on a large number of OPC patterns (at nominal dose and focus conditions) not included in the calibration; validation RMS results as small as 1 nm can be reached. Furthermore, we study the model's extendibility to two-dimensional end of line (EOL) structures. Finally, we correlate the experimentally observed fingerprint of the CD uniformity to a model, where EUV tool specific signatures are taken into account.

MANN: A program to transfer designs for diffractive optical elements to a MANN photolithographic mask generator

NASA Technical Reports Server (NTRS)

Matthys, Donald R.

1994-01-01

There are two basic areas of interest for diffractive optics. In the first, the property of wavefront division is exploited for achieving optical fanout, analogous to the more familiar electrical fanout of electronic circuitry. The basic problem here is that when using a simple uniform diffraction grating the energy input is divided unevenly among the output beams. The other area of interest is the use of diffractive elements to replace or supplement standard refractive elements such as lenses. Again, local grating variations can be used to control the amount of bending imparted to optical rays, and the efficiency of the diffractive element will depend on how closely the element can be matched to the design requirements. In general, production restrictions limit how closely the element approaches the design, and for the common case of photolithographic production, a series of binary masks is required to achieve high efficiency. The actual design process is much more involved than in the case of elements for optical fanout, as the desired phase of the optical wavefront over some reference plane must be specified and the phase alteration to be introduced at each point by the diffraction element must be known. This generally requires the utilization of a standard optical design program. Two approaches are possible. In the first approach, the diffractive element is treated as a special type of lens and the ordinary optical design equations are used. Optical design programs tend to follow a second approach, namely, using the equations of optical interference derived from holographic theory and then allowing the introduction of phase front corrections in the form of polynomial equations. By using either of these two methods, diffractive elements can be used not only to compensate for distortions such as chromatic or spherical aberration, but also to perform the work of a variety of other optical elements such as null correctors, beam shapers, etc. The main focus of the project described in this report is how the design information from the lens design program is incorporated into the photolithographic process. It is shown that the MANN program, a photolithographic mask generator, fills the need for a link between lens design programs and mask generation controllers.The generated masks can be used to expose a resist-coated substrate which is etched and then must be re-coated, re-exposed, and re-etched for making copies, just as in the electronics industry.

The effect of foveal and parafoveal masks on the eye movements of older and younger readers.

PubMed

Rayner, Keith; Yang, Jinmian; Schuett, Susanne; Slattery, Timothy J

2014-06-01

In the present study, we examined foveal and parafoveal processing in older compared with younger readers by using gaze-contingent paradigms with 4 conditions. Older and younger readers read sentences in which the text was either a) presented normally, b) the foveal word was masked as soon as it was fixated, c) all of the words to the left of the fixated word were masked, or d) all of the words to the right of the fixated word were masked. Although older and younger readers both found reading when the fixated word was masked quite difficult, the foveal mask increased sentence reading time more than 3-fold (3.4) for the older readers (in comparison with the control condition in which the sentence was presented normally) compared with the younger readers who took 1.3 times longer to read sentences in the foveal mask condition (in comparison with the control condition). The left and right parafoveal masks did not disrupt reading as severely as the foveal mask, though the right mask was more disruptive than the left mask. Also, there was some indication that the younger readers found the right mask condition relatively more disruptive than the left mask condition. PsycINFO Database Record (c) 2014 APA, all rights reserved.

Robust source and mask optimization compensating for mask topography effects in computational lithography.

PubMed

Li, Jia; Lam, Edmund Y

2014-04-21

Mask topography effects need to be taken into consideration for a more accurate solution of source mask optimization (SMO) in advanced optical lithography. However, rigorous 3D mask models generally involve intensive computation and conventional SMO fails to manipulate the mask-induced undesired phase errors that degrade the usable depth of focus (uDOF) and process yield. In this work, an optimization approach incorporating pupil wavefront aberrations into SMO procedure is developed as an alternative to maximize the uDOF. We first design the pupil wavefront function by adding primary and secondary spherical aberrations through the coefficients of the Zernike polynomials, and then apply the conjugate gradient method to achieve an optimal source-mask pair under the condition of aberrated pupil. We also use a statistical model to determine the Zernike coefficients for the phase control and adjustment. Rigorous simulations of thick masks show that this approach provides compensation for mask topography effects by improving the pattern fidelity and increasing uDOF.

ArF halftone PSM cleaning process optimization for next-generation lithography

NASA Astrophysics Data System (ADS)

Son, Yong-Seok; Jeong, Seong-Ho; Kim, Jeong-Bae; Kim, Hong-Seok

2000-07-01

ArF lithography which is expected for the next generation optical lithography is adapted for 0.13 micrometers design-rule and beyond. ArF half-tone phase shift mask (HT PSM) will be applied as 1st generation of ArF lithography. Also ArF PSM cleaning demands by means of tighter controls related to phase angle, transmittance and contamination on the masks. Phase angle on ArF HT PSM should be controlled within at least +/- 3 degree and transmittance controlled within at least +/- 3 percent after cleaning process and pelliclization. In the cleaning process of HT PSM, requires not only the remove the particle on mask, but also control to half-tone material for metamorphosis. Contamination defects on the Qz of half tone type PSM is not easy to remove on the photomask surface. New technology and methods of cleaning will be developed in near future, but we try to get out for limit contamination on the mask, without variation of phase angle and transmittance after cleaning process.

SMIF capability at Intel Mask Operation improves yield

NASA Astrophysics Data System (ADS)

Dam, Thuc H.; Pekny, Matt; Millino, Jim; Luu, Gibson; Melwani, Nitesh; Venkatramani, Aparna; Tavassoli, Malahat

2003-08-01

At Intel Mask Operations (IMO), Standard Mechanical Interface (SMIF) processing has been employed to reduce environmental particle contamination from manual handling-related activities. SMIF handling entailed the utilization of automated robotic transfers of photoblanks/reticles between SMIF pods, whereas conventional handling utilized manual pick transfers of masks between SMIF pods with intermediate storage in Toppan compacts. The SMIF-enabling units in IMO's process line included: (1) coater, (2) exposure, (3) developer, (4) dry etcher, and (5) inspection. Each unit is equipped with automated I/O port, environmentally enclosed processing chamber, and SMIF pods. Yield metrics were utilized to demonstrate the effectiveness and advantages of SMIF processing compared to manual processing. The areas focused in this paper were blank resist coating, binary front-end reticle processing and 2nd level PSM reticle processing. Results obtained from the investigation showed yield improvements in these areas.

System and methods for determining masking signals for applying empirical mode decomposition (EMD) and for demodulating intrinsic mode functions obtained from application of EMD

DOEpatents

Senroy, Nilanjan [New Delhi, IN; Suryanarayanan, Siddharth [Littleton, CO

2011-03-15

A computer-implemented method of signal processing is provided. The method includes generating one or more masking signals based upon a computed Fourier transform of a received signal. The method further includes determining one or more intrinsic mode functions (IMFs) of the received signal by performing a masking-signal-based empirical mode decomposition (EMD) using the at least one masking signal.

Do different perceptual task sets modulate electrophysiological correlates of masked visuomotor priming? Attention to shape and color put to the test.

PubMed

Zovko, Monika; Kiefer, Markus

2013-02-01

According to classical theories, automatic processes operate independently of attention. Recent evidence, however, shows that masked visuomotor priming, an example of an automatic process, depends on attention to visual form versus semantics. In a continuation of this approach, we probed feature-specific attention within the perceptual domain and tested in two event-related potential (ERP) studies whether masked visuomotor priming in a shape decision task specifically depends on attentional sensitization of visual pathways for shape in contrast to color. Prior to the masked priming procedure, a shape or a color decision task served to induce corresponding task sets. ERP analyses revealed visuomotor priming effects over the occipitoparietal scalp only after the shape, but not after the color induction task. Thus, top-down control coordinates automatic processing streams in congruency with higher-level goals even at a fine-grained level. Copyright © 2012 Society for Psychophysiological Research.

EUVL mask patterning with blanks from commercial suppliers

NASA Astrophysics Data System (ADS)

Yan, Pei-Yang; Zhang, Guojing; Nagpal, Rajesh; Shu, Emily Y.; Li, Chaoyang; Qu, Ping; Chen, Frederick T.

2004-12-01

Extreme Ultraviolet Lithography (EUVL) reflective mask blank development includes low thermal expansion material fabrication, mask substrate finishing, reflective multi-layer (ML) and capping layer deposition, buffer (optional)/absorber stack deposition, EUV specific metrology, and ML defect inspection. In the past, we have obtained blanks deposited with various layer stacks from several vendors. Some of them are not commercial suppliers. As a result, the blank and patterned mask qualities are difficult to maintain and improve. In this paper we will present the evaluation results of the EUVL mask pattering processes with the complete EUVL mask blanks supplied by the commercial blank supplier. The EUVL mask blanks used in this study consist of either quartz or ULE substrates which is a type of low thermal expansion material (LTEM), 40 pairs of molybdenum/silicon (Mo/Si) ML layer, thin ruthenium (Ru) capping layer, tantalum boron nitride (TaBN) absorber, and chrome (Cr) backside coating. No buffer layer is used. Our study includes the EUVL mask blank characterization, patterned EUVL mask characterization, and the final patterned EUVL mask flatness evaluation.

Probing for quantum speedup on D-Wave Two

NASA Astrophysics Data System (ADS)

Rønnow, Troels F.; Wang, Zhihui; Job, Joshua; Isakov, Sergei V.; Boixo, Sergio; Lidar, Daniel; Martinis, John; Troyer, Matthias

2014-03-01

Quantum speedup refers to the advantage quantum devices can have over classical ones in solving classes of computational problems. In this talk we show how to correctly define and measure quantum speedup in experimental devices. We show how to avoid issues that might mask or fake quantum speedup.

Near-field photochemical and radiation-induced chemical fabrication of nanopatterns of a self-assembled silane monolayer

PubMed Central

Hentschel, Carsten; Fontein, Florian; Stegemann, Linda; Hoeppener, Christiane; Fuchs, Harald; Hoeppener, Stefanie

2014-01-01

Summary A general concept for parallel near-field photochemical and radiation-induced chemical processes for the fabrication of nanopatterns of a self-assembled monolayer (SAM) of (3-aminopropyl)triethoxysilane (APTES) is explored with three different processes: 1) a near-field photochemical process by photochemical bleaching of a monomolecular layer of dye molecules chemically bound to an APTES SAM, 2) a chemical process induced by oxygen plasma etching as well as 3) a combined near-field UV-photochemical and ozone-induced chemical process, which is applied directly to an APTES SAM. All approaches employ a sandwich configuration of the surface-supported SAM, and a lithographic mask in form of gold nanostructures fabricated through colloidal sphere lithography (CL), which is either exposed to visible light, oxygen plasma or an UV–ozone atmosphere. The gold mask has the function to inhibit the photochemical reactions by highly localized near-field interactions between metal mask and SAM and to inhibit the radiation-induced chemical reactions by casting a highly localized shadow. The removal of the gold mask reveals the SAM nanopattern. PMID:25247126

Impact of topographic mask models on scanner matching solutions

NASA Astrophysics Data System (ADS)

Tyminski, Jacek K.; Pomplun, Jan; Renwick, Stephen P.

2014-03-01

Of keen interest to the IC industry are advanced computational lithography applications such as Optical Proximity Correction of IC layouts (OPC), scanner matching by optical proximity effect matching (OPEM), and Source Optimization (SO) and Source-Mask Optimization (SMO) used as advanced reticle enhancement techniques. The success of these tasks is strongly dependent on the integrity of the lithographic simulators used in computational lithography (CL) optimizers. Lithographic mask models used by these simulators are key drivers impacting the accuracy of the image predications, and as a consequence, determine the validity of these CL solutions. Much of the CL work involves Kirchhoff mask models, a.k.a. thin masks approximation, simplifying the treatment of the mask near-field images. On the other hand, imaging models for hyper-NA scanner require that the interactions of the illumination fields with the mask topography be rigorously accounted for, by numerically solving Maxwell's Equations. The simulators used to predict the image formation in the hyper-NA scanners must rigorously treat the masks topography and its interaction with the scanner illuminators. Such imaging models come at a high computational cost and pose challenging accuracy vs. compute time tradeoffs. Additional complication comes from the fact that the performance metrics used in computational lithography tasks show highly non-linear response to the optimization parameters. Finally, the number of patterns used for tasks such as OPC, OPEM, SO, or SMO range from tens to hundreds. These requirements determine the complexity and the workload of the lithography optimization tasks. The tools to build rigorous imaging optimizers based on first-principles governing imaging in scanners are available, but the quantifiable benefits they might provide are not very well understood. To quantify the performance of OPE matching solutions, we have compared the results of various imaging optimization trials obtained with Kirchhoff mask models to those obtained with rigorous models involving solutions of Maxwell's Equations. In both sets of trials, we used sets of large numbers of patterns, with specifications representative of CL tasks commonly encountered in hyper-NA imaging. In this report we present OPEM solutions based on various mask models and discuss the models' impact on hyper- NA scanner matching accuracy. We draw conclusions on the accuracy of results obtained with thin mask models vs. the topographic OPEM solutions. We present various examples representative of the scanner image matching for patterns representative of the current generation of IC designs.

a New Mask for Automatic Building Detection from High Density Point Cloud Data and Multispectral Imagery

NASA Astrophysics Data System (ADS)

Awrangjeb, M.; Siddiqui, F. U.

2017-11-01

In complex urban and residential areas, there are buildings which are not only connected with and/or close to one another but also partially occluded by their surrounding vegetation. Moreover, there may be buildings whose roofs are made of transparent materials. In transparent buildings, there are point returns from both the ground (or materials inside the buildings) and the rooftop. These issues confuse the previously proposed building masks which are generated from either ground points or non-ground points. The normalised digital surface model (nDSM) is generated from the non-ground points and usually it is hard to find individual buildings and trees using the nDSM. In contrast, the primary building mask is produced using the ground points, thereby it misses the transparent rooftops. This paper proposes a new building mask based on the non-ground points. The dominant directions of non-ground lines extracted from the multispectral imagery are estimated. A dummy grid with the target mask resolution is rotated at each dominant direction to obtain the corresponding height values from the non-ground points. Three sub-masks are then generated from the height grid by estimating the gradient function. Two of these sub-masks capture planar surfaces whose height remain constant in along and across the dominant direction, respectively. The third sub-mask contains only the flat surfaces where the height (ideally) remains constant in all directions. All the sub-masks generated in all estimated dominant directions are combined to produce the candidate building mask. Although the application of the gradient function helps in removal of most of the vegetation, the final building mask is obtained through removal of planar vegetation, if any, and tiny isolated false candidates. Experimental results on three Australian data sets show that the proposed method can successfully remove vegetation, thereby separate buildings from occluding vegetation and detect buildings with transparent roof materials. While compared to existing building detection techniques, the proposed technique offers higher objectbased completeness, correctness and quality, specially in complex scenes with aforementioned issues. It is not only capable of detecting transparent buildings, but also small garden sheds which are sometimes as small as 5 m2 in area.

Process research of non-cz silicon material. Low cost solar array project, cell and module formation research area

NASA Technical Reports Server (NTRS)

1982-01-01

Liquid diffusion masks and liquid applied dopants to replace the CVD Silox masking and gaseous diffusion operations specified for forming junctions in the Westinghouse baseline process sequence for producing solar cells from dendritic web silicon were investigated.

Conception et realisation d'un echantillonneur de grande vitesse en technologie HIGFET (transistor a effet de champ avec heterostructure et grille isolee)

NASA Astrophysics Data System (ADS)

Tazlauanu, Mihai

The research work reported in this thesis details a new fabrication technology for high speed integrated circuits in the broadest sense, including original contributions to device modeling, circuit simulation, integrated circuit design, wafer fabrication, micro-physical and electrical characterization, process flow and final device testing as part of an electrical system. The primary building block of this technology is the heterostructure insulated gate field effect transistor, HIGFET. We used an InP/InGaAs epitaxial heterostructure to ensure a high charge carrier mobility and hence obtain a higher operating frequency than that currently possible for silicon devices. We designed and built integrated circuits with two system architectures. The first architecture integrates the clock signal generator with the sample and hold circuitry on the InP die, while the second is a hybrid architecture of an InP sample and hold assembled with an external clock signal generator made with ECL circuits on GaAs. To generate the clock signals on the same die with the sample and hold circuits, we developed a digital circuit family based on an original inverter, appropriate for depletion mode NMOS technology. We used this circuit to design buffer amplifiers and ring oscillators. Four mask sets produced in a Cadence environment, have permitted the fabrication of test and working devices. Each new mask generation has reflected the previous achievements and has implemented new structures and circuit techniques. The fabrication technology has undergone successive modifications and refinements to optimize device manufacturing. Particular attention has been paid to the technological robustness. The plasma enhanced etching process (RIE) had been used for an exhaustive study for the statistical simulation of the technological steps. Electrical measurements, performed on the experimental samples, have permitted the modeling of the devices, technological processing to be adjusted and circuit design improved. Electrical measurements performed on dedicated test structures, during the fabrication cycle, allowed the identification and correction of some technological problems (ohmic contacts, current leakage, interconnection integrity, and thermal instabilities). Feedback corrections were validated by dedicated experiments with the experimental effort optimized by statistical techniques (factorial fractional design). (Abstract shortened by UMI.)

Coherent optical processing using noncoherent light after source masking.

PubMed

Boopathi, V; Vasu, R M

1992-01-10

Coherent optical processing starting with spatially noncoherent illumination is described. Good spatial coherence is introduced in the far field by modulating a noncoherent source when masks with sharp autocorrelation are used. The far-field mutual coherence function of light is measured and it is seen that, for the masks and the source size used here, we get a fairly large area over which the mutual coherence function is high and flat. We demonstrate traditional coherent processing operations such as Fourier transformation and image deblurring when coherent light that is produced in the above fashion is used. A coherence-redundancy merit function is defined for this type of processing system. It is experimentally demonstrated that the processing system introduced here has superior blemish tolerance compared with a traditional processor that uses coherent illumination.

Advances in low-defect multilayers for EUVL mask blanks

NASA Astrophysics Data System (ADS)

Folta, James A.; Davidson, J. Courtney; Larson, Cindy C.; Walton, Christopher C.; Kearney, Patrick A.

2002-07-01

Low-defect multilayer coatings are required to fabricate mask blanks for Extreme Ultraviolet Lithography (EUVL). The mask blanks consist of high reflectance EUV multilayers on low thermal expansion substrates. A defect density of 0.0025 printable defects/cm2 for both the mask substrate and the multilayer is required to provide a mask blank yield of 60 percent. Current low defect multilayer coating technology allows repeated coating-added defect levels of 0.05/cm2 for defects greater than 90 nm polystyrene latex sphere (PSL) equivalent size for lots of 20 substrates. Extended clean operation of the coating system at levels below 0.08/cm2 for 3 months of operation has also been achieved. Two substrates with zero added defects in the quality area have been fabricated, providing an existence proof that ultra low defect coatings are possible. Increasing the ion source-to-target distance from 410 to 560 mm to reduce undesired coating of the ion source caused the defect density to increase to 0.2/cm2. Deposition and etching diagnostic witness substrates and deposition pinhole cameras showed a much higher level of ion beam spillover (ions missing the sputter target) than expected. Future work will quantify beam spillover, and test designs to reduce spillover, if it is confirmed to be the cause of the increased defect level. The LDD system will also be upgraded to allow clean coating of standard format mask substrates. The upgrade will confirm that the low defect process developed on Si wafers is compatible with the standard mask format 152 mm square substrates, and will provide a clean supply of EUVL mask blanks needed to support development of EUVL mask patterning processes and clean mask handling technologies.

Schizophrenia alters intra-network functional connectivity in the caudate for detecting speech under informational speech masking conditions.

PubMed

Zheng, Yingjun; Wu, Chao; Li, Juanhua; Li, Ruikeng; Peng, Hongjun; She, Shenglin; Ning, Yuping; Li, Liang

2018-04-04

Speech recognition under noisy "cocktail-party" environments involves multiple perceptual/cognitive processes, including target detection, selective attention, irrelevant signal inhibition, sensory/working memory, and speech production. Compared to health listeners, people with schizophrenia are more vulnerable to masking stimuli and perform worse in speech recognition under speech-on-speech masking conditions. Although the schizophrenia-related speech-recognition impairment under "cocktail-party" conditions is associated with deficits of various perceptual/cognitive processes, it is crucial to know whether the brain substrates critically underlying speech detection against informational speech masking are impaired in people with schizophrenia. Using functional magnetic resonance imaging (fMRI), this study investigated differences between people with schizophrenia (n = 19, mean age = 33 ± 10 years) and their matched healthy controls (n = 15, mean age = 30 ± 9 years) in intra-network functional connectivity (FC) specifically associated with target-speech detection under speech-on-speech-masking conditions. The target-speech detection performance under the speech-on-speech-masking condition in participants with schizophrenia was significantly worse than that in matched healthy participants (healthy controls). Moreover, in healthy controls, but not participants with schizophrenia, the strength of intra-network FC within the bilateral caudate was positively correlated with the speech-detection performance under the speech-masking conditions. Compared to controls, patients showed altered spatial activity pattern and decreased intra-network FC in the caudate. In people with schizophrenia, the declined speech-detection performance under speech-on-speech masking conditions is associated with reduced intra-caudate functional connectivity, which normally contributes to detecting target speech against speech masking via its functions of suppressing masking-speech signals.

Accurate defect die placement and nuisance defect reduction for reticle die-to-die inspections

NASA Astrophysics Data System (ADS)

Wen, Vincent; Huang, L. R.; Lin, C. J.; Tseng, Y. N.; Huang, W. H.; Tuo, Laurent C.; Wylie, Mark; Chen, Ellison; Wang, Elvik; Glasser, Joshua; Kelkar, Amrish; Wu, David

2015-10-01

Die-to-die reticle inspections are among the simplest and most sensitive reticle inspections because of the use of an identical-design neighboring-die for the reference image. However, this inspection mode can have two key disadvantages: (1) The location of the defect is indeterminate because it is unclear to the inspector whether the test or reference image is defective; and (2) nuisance and false defects from mask manufacturing noise and tool optical variation can limit the usable sensitivity. The use of a new sequencing approach for a die-to-die inspection can resolve these issues without any additional scan time, without sacrifice in sensitivity requirement, and with a manageable increase in computation load. In this paper we explore another approach for die-to-die inspections using a new method of defect processing and sequencing. Utilizing die-to-die double arbitration during defect detection has been proven through extensive testing to generate accurate placement of the defect in the correct die to ensure efficient defect disposition at the AIMS step. The use of this method maintained the required inspection sensitivity for mask quality as verified with programmed-defectmask qualification and then further validated with production masks comparing the current inspection approach to the new method. Furthermore, this approach can significantly reduce the total number of defects that need to be reviewed by essentially eliminating the nuisance and false defects that can result from a die-to-die inspection. This "double-win" will significantly reduce the effort in classifying a die-to-die inspection result and will lead to improved cycle times.

Dynamic testbed demonstration of WFIRST coronagraph low order wavefront sensing and control (LOWFS/C)

NASA Astrophysics Data System (ADS)

Shi, Fang; Cady, Eric; Seo, Byoung-Joon; An, Xin; Balasubramanian, Kunjithapatham; Kern, Brian; Lam, Raymond; Marx, David; Moody, Dwight; Mejia Prada, Camilo; Patterson, Keith; Poberezhskiy, Ilya; Shields, Joel; Sidick, Erkin; Tang, Hong; Trauger, John; Truong, Tuan; White, Victor; Wilson, Daniel; Zhou, Hanying

2017-09-01

To maintain the required performance of WFIRST Coronagraph in a realistic space environment, a Low Order Wavefront Sensing and Control (LOWFS/C) subsystem is necessary. The LOWFS/C uses a Zernike wavefront sensor (ZWFS) with the phase shifting disk combined with the starlight rejecting occulting mask. For wavefront error corrections, WFIRST LOWFS/C uses a fast steering mirror (FSM) for line-of-sight (LoS) correction, a focusing mirror for focus drift correction, and one of the two deformable mirrors (DM) for other low order wavefront error (WFE) correction. As a part of technology development and demonstration for WFIRST Coronagraph, a dedicated Occulting Mask Coronagraph (OMC) testbed has been built and commissioned. With its configuration similar to the WFIRST flight coronagraph instrument the OMC testbed consists of two coronagraph modes, Shaped Pupil Coronagraph (SPC) and Hybrid Lyot Coronagraph (HLC), a low order wavefront sensor (LOWFS), and an optical telescope assembly (OTA) simulator which can generate realistic LoS drift and jitter as well as low order wavefront error that would be induced by the WFIRST telescope's vibration and thermal changes. In this paper, we will introduce the concept of WFIRST LOWFS/C, describe the OMC testbed, and present the testbed results of LOWFS sensor performance. We will also present our recent results from the dynamic coronagraph tests in which we have demonstrated of using LOWFS/C to maintain the coronagraph contrast with the presence of WFIRST-like line-of-sight and low order wavefront disturbances.

Unmasking identity dissonance: exploring medical students' professional identity formation through mask making.

PubMed

Joseph, Kimera; Bader, Karlen; Wilson, Sara; Walker, Melissa; Stephens, Mark; Varpio, Lara

2017-04-01

Professional identity formation is an on-going, integrative process underlying trainees' experiences of medical education. Since each medical student's professional identity formation process is an individual, internal, and often times emotionally charged unconscious experience, it can be difficult for educators to understand each student's unique experience. We investigate if mask making can provide learners and educators the opportunity to explore medical students' professional identity formation experiences. In 2014 and 2015, 30 third year medical students created masks, with a brief accompanying written narrative, to creatively express their medical education experiences. Using a paradigmatic case selection approach, four masks were analyzed using techniques from visual rhetoric and the Listening Guide. The research team clearly detected identity dissonance in each case. Each case provided insights into the unique personal experiences of the dissonance process for each trainee at a particular point in their medical school training. We propose that mask making accompanied by a brief narrative reflection can help educators identify students experiencing identity dissonance, and explore each student's unique experience of that dissonance. The process of making these artistic expressions may also provide a form of intervention that can enable educators to help students navigate professional identity formation and identity dissonance experiences.

In-line verification of linewidth uniformity for 0.18 and below: design rule reticles

NASA Astrophysics Data System (ADS)

Tan, TaiSheng; Kuo, Shen C.; Wu, Clare; Falah, Reuven; Hemar, Shirley; Sade, Amikam; Gottlib, Gidon

2000-07-01

Mask making process development and control is addressed using a reticle inspection tool equipped with the new revolutionized application called LBM-Linewidth Bias Monitoring. In order to use the LBM for mask-making process control, procedures and corresponding test plates are a developed, such that routine monitoring of the manufacturing process discloses process variation and machine variation. At the same time systematic variation are studied and either taken care of or taken into consideration to allow successful production line work. In this paper the contribution of the LBM for mask quality monitoring is studied with respect to dense layers, e.g. DRAM. Another aspect of this application - the detection of very small CD mis-uniformity areas is discussed.

Recovery of a crowded object by masking the flankers: Determining the locus of feature integration

PubMed Central

Chakravarthi, Ramakrishna; Cavanagh, Patrick

2009-01-01

Object recognition is a central function of the visual system. As a first step, the features of an object are registered; these independently encoded features are then bound together to form a single representation. Here we investigate the locus of this “feature integration” by examining crowding, a striking breakdown of this process. Crowding, an inability to identify a peripheral target surrounded by flankers, results from “excessive integration” of target and flanker features. We presented a standard crowding display with a target C flanked by four flanker C's in the periphery. We then masked only the flankers (but not the target) with one of three kinds of masks—noise, metacontrast, and object substitution—each of which interferes at progressively higher levels of visual processing. With noise and metacontrast masks (low-level masking), the crowded target was recovered, whereas with object substitution masks (high-level masking), it was not. This places a clear upper bound on the locus of interference in crowding suggesting that crowding is not a low-level phenomenon. We conclude that feature integration, which underlies crowding, occurs prior to the locus of object substitution masking. Further, our results indicate that the integrity of the flankers, but not their identification, is crucial for crowding to occur. PMID:19810785

The edge of awareness: Mask spatial density, but not color, determines optimal temporal frequency for continuous flash suppression.

PubMed

Drewes, Jan; Zhu, Weina; Melcher, David

2018-01-01

The study of how visual processing functions in the absence of visual awareness has become a major research interest in the vision-science community. One of the main sources of evidence that stimuli that do not reach conscious awareness-and are thus "invisible"-are still processed to some degree by the visual system comes from studies using continuous flash suppression (CFS). Why and how CFS works may provide more general insight into how stimuli access awareness. As spatial and temporal properties of stimuli are major determinants of visual perception, we hypothesized that these properties of the CFS masks would be of significant importance to the achieved suppression depth. In previous studies however, the spatial and temporal properties of the masks themselves have received little study, and masking parameters vary widely across studies, making a metacomparison difficult. To investigate the factors that determine the effectiveness of CFS, we varied both the temporal frequency and the spatial density of Mondrian-style masks. We consistently found the longest suppression duration for a mask temporal frequency of around 6 Hz. In trials using masks with reduced spatial density, suppression was weaker and frequency tuning was less precise. In contrast, removing color reduced mask effectiveness but did not change the pattern of suppression strength as a function of frequency. Overall, this pattern of results stresses the importance of CFS mask parameters and is consistent with the idea that CFS works by disrupting the spatiotemporal mechanisms that underlie conscious access to visual input.

Mask-less patterning of organic light emitting diodes using electrospray and selective biasing on pixel electrodes

NASA Astrophysics Data System (ADS)

Lee, Sangyeob; Koo, Hyun; Cho, Sunghwan

2015-04-01

Wet process of soluble organic light emitting diode (OLED) materials has attracted much attention due to its potential as a large-area manufacturing process with high productivity. Electrospray (ES) deposition is one of candidates of organic thin film formation process for OLED. However, to fabricate red, green, and blue emitters for color display, a fine metal mask is required during spraying emitter materials. We demonstrate a mask-less color pixel patterning process using ES of soluble OLED materials and selective biasing on pixel electrodes and a spray nozzle. We show red and green line patterns of OLED materials. It was found that selective patterning can be allowed by coulomb repulsion between nozzle and pixel. Furthermore, we fabricated blue fluorescent OLED devices by vacuum evaporation and ES processes. The device performance of ES processed OLED showed nearly identical current-voltage characteristics and slightly lower current efficiency compared to vacuum processed OLED.

Application of resist-profile-aware source optimization in 28 nm full chip optical proximity correction

NASA Astrophysics Data System (ADS)

Zhu, Jun; Zhang, David Wei; Kuo, Chinte; Wang, Qing; Wei, Fang; Zhang, Chenming; Chen, Han; He, Daquan; Hsu, Stephen D.

2017-07-01

As technology node shrinks, aggressive design rules for contact and other back end of line (BEOL) layers continue to drive the need for more effective full chip patterning optimization. Resist top loss is one of the major challenges for 28 nm and below technology nodes, which can lead to post-etch hotspots that are difficult to predict and eventually degrade the process window significantly. To tackle this problem, we used an advanced programmable illuminator (FlexRay) and Tachyon SMO (Source Mask Optimization) platform to make resistaware source optimization possible, and it is proved to greatly improve the imaging contrast, enhance focus and exposure latitude, and minimize resist top loss thus improving the yield.

Murder, She Wrote

PubMed Central

Nasrallah, Maha; Carmel, David; Lavie, Nilli

2009-01-01

Enhanced sensitivity to information of negative (compared to positive) valence has an adaptive value, for example, by expediting the correct choice of avoidance behavior. However, previous evidence for such enhanced sensitivity has been inconclusive. Here we report a clear advantage for negative over positive words in categorizing them as emotional. In 3 experiments, participants classified briefly presented (33 ms or 22 ms) masked words as emotional or neutral. Categorization accuracy and valence-detection sensitivity were both higher for negative than for positive words. The results were not due to differences between emotion categories in either lexical frequency, extremeness of valence ratings, or arousal. These results conclusively establish enhanced sensitivity for negative over positive words, supporting the hypothesis that negative stimuli enjoy preferential access to perceptual processing. PMID:19803583

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gratama van Andel, H. A. F.; Venema, H. W.; Streekstra, G. J.

For clear visualization of vessels in CT angiography (CTA) images of the head and neck using maximum intensity projection (MIP) or volume rendering (VR) bone has to be removed. In the past we presented a fully automatic method to mask the bone [matched mask bone elimination (MMBE)] for this purpose. A drawback is that vessels adjacent to bone may be partly masked as well. We propose a modification, multiscale MMBE, which reduces this problem by using images at two scales: a higher resolution than usual for image processing and a lower resolution to which the processed images are transformed formore » use in the diagnostic process. A higher in-plane resolution is obtained by the use of a sharper reconstruction kernel. The out-of-plane resolution is improved by deconvolution or by scanning with narrower collimation. The quality of the mask that is used to remove bone is improved by using images at both scales. After masking, the desired resolution for the normal clinical use of the images is obtained by blurring with Gaussian kernels of appropriate widths. Both methods (multiscale and original) were compared in a phantom study and with clinical CTA data sets. With the multiscale approach the width of the strip of soft tissue adjacent to the bone that is masked can be reduced from 1.0 to 0.2 mm without reducing the quality of the bone removal. The clinical examples show that vessels adjacent to bone are less affected and therefore better visible. Images processed with multiscale MMBE have a slightly higher noise level or slightly reduced resolution compared with images processed by the original method and the reconstruction and processing time is also somewhat increased. Nevertheless, multiscale MMBE offers a way to remove bone automatically from CT angiography images without affecting the integrity of the blood vessels. The overall image quality of MIP or VR images is substantially improved relative to images processed with the original MMBE method.« less

How color, regularity, and good Gestalt determine backward masking.

PubMed

Sayim, Bilge; Manassi, Mauro; Herzog, Michael

2014-06-18

The strength of visual backward masking depends on the stimulus onset asynchrony (SOA) between target and mask. Recently, it was shown that the conjoint spatial layout of target and mask is as crucial as SOA. Particularly, masking strength depends on whether target and mask group with each other. The same is true in crowding where the global spatial layout of the flankers and target-flanker grouping determine crowding strength. Here, we presented a vernier target followed by different flanker configurations at varying SOAs. Similar to crowding, masking of a red vernier target was strongly reduced for arrays of 10 green compared with 10 red flanking lines. Unlike crowding, single green lines flanking the red vernier showed strong masking. Irregularly arranged flanking lines yielded stronger masking than did regularly arranged lines, again similar to crowding. While cuboid flankers reduced crowding compared with single lines, this was not the case in masking. We propose that, first, masking is reduced when the flankers are part of a larger spatial structure. Second, spatial factors counteract color differences between the target and the flankers. Third, complex Gestalts, such as cuboids, seem to need longer processing times to show ungrouping effects as observed in crowding. Strong parallels between masking and crowding suggest similar underlying mechanism; however, temporal factors in masking additionally modulate performance, acting as an additional grouping cue. © 2014 ARVO.

Getting the cocktail party started: masking effects in speech perception

PubMed Central

Evans, S; McGettigan, C; Agnew, ZK; Rosen, S; Scott, SK

2016-01-01

Spoken conversations typically take place in noisy environments and different kinds of masking sounds place differing demands on cognitive resources. Previous studies, examining the modulation of neural activity associated with the properties of competing sounds, have shown that additional speech streams engage the superior temporal gyrus. However, the absence of a condition in which target speech was heard without additional masking made it difficult to identify brain networks specific to masking and to ascertain the extent to which competing speech was processed equivalently to target speech. In this study, we scanned young healthy adults with continuous functional Magnetic Resonance Imaging (fMRI), whilst they listened to stories masked by sounds that differed in their similarity to speech. We show that auditory attention and control networks are activated during attentive listening to masked speech in the absence of an overt behavioural task. We demonstrate that competing speech is processed predominantly in the left hemisphere within the same pathway as target speech but is not treated equivalently within that stream, and that individuals who perform better in speech in noise tasks activate the left mid-posterior superior temporal gyrus more. Finally, we identify neural responses associated with the onset of sounds in the auditory environment, activity was found within right lateralised frontal regions consistent with a phasic alerting response. Taken together, these results provide a comprehensive account of the neural processes involved in listening in noise. PMID:26696297

Spatial Release From Masking in Simulated Cochlear Implant Users With and Without Access to Low-Frequency Acoustic Hearing

PubMed Central

Dietz, Mathias; Hohmann, Volker; Jürgens, Tim

2015-01-01

For normal-hearing listeners, speech intelligibility improves if speech and noise are spatially separated. While this spatial release from masking has already been quantified in normal-hearing listeners in many studies, it is less clear how spatial release from masking changes in cochlear implant listeners with and without access to low-frequency acoustic hearing. Spatial release from masking depends on differences in access to speech cues due to hearing status and hearing device. To investigate the influence of these factors on speech intelligibility, the present study measured speech reception thresholds in spatially separated speech and noise for 10 different listener types. A vocoder was used to simulate cochlear implant processing and low-frequency filtering was used to simulate residual low-frequency hearing. These forms of processing were combined to simulate cochlear implant listening, listening based on low-frequency residual hearing, and combinations thereof. Simulated cochlear implant users with additional low-frequency acoustic hearing showed better speech intelligibility in noise than simulated cochlear implant users without acoustic hearing and had access to more spatial speech cues (e.g., higher binaural squelch). Cochlear implant listener types showed higher spatial release from masking with bilateral access to low-frequency acoustic hearing than without. A binaural speech intelligibility model with normal binaural processing showed overall good agreement with measured speech reception thresholds, spatial release from masking, and spatial speech cues. This indicates that differences in speech cues available to listener types are sufficient to explain the changes of spatial release from masking across these simulated listener types. PMID:26721918

Comparison of experiments and computations for cold gas spraying through a mask. Part 2

NASA Astrophysics Data System (ADS)

Klinkov, S. V.; Kosarev, V. F.; Ryashin, N. S.

2017-03-01

This paper presents experimental and simulation results of cold spray coating deposition using the mask placed above the plane substrate at different distances. Velocities of aluminum (mean size 30 μm) and copper (mean size 60 μm) particles in the vicinity of the mask are determined. It was found that particle velocities have angular distribution in flow with a representative standard deviation of 1.5-2 degrees. Modeling of coating formation behind the mask with account for this distribution was developed. The results of model agree with experimental data confirming the importance of particle angular distribution for coating deposition process in the masked area.

[Oxygenation: the impact of face mask coupling.].

PubMed

Gregori, Waldemar Montoya de; Mathias, Lígia Andrade da Silva Telles; Piccinini Filho, Luiz; Pena, Ernesto Leonardo de Carpio; Vicuna, Aníbal Heberto Mora; Vieira, Joaquim Edson

2005-10-01

Different oxygenation techniques aim at promoting denitrogenation before apnea during induction. The main reason why CIO2 = 100% cannot be reached is the lack of adequate face mask coupling, allowing the entry of room air. Although anesthesiologists know this principle, not all of them apply it correctly, facilitating the entry of air in fresh gases flow and consequently diluting CIO2. This prospective study was performed to comparatively evaluate, through the variation of oxygen expired concentration (CEO2), the efficacy of the oxygenation technique via face mask in the conditions routinely used by anesthesiologists, simulating situations of progressive leaks. Oxygen end-tidal concentrations of 15 volunteers, physical status ASA I, were studied with 8 deep breaths (vital capacity) in 60 s with fresh gas flow of 10 L.min-1. The face mask was: tightly fitted with 100% CIO2 (Tf100) or varying from 50% to 90%, (Tf50, Tf60, Tf70, Tf80, Tf90); gravity-coupled to face and 100% CIO2 (Grav) and moved 1 cm away from face with 100% CIO2 (Aw). CEO2 was recorded at 10 s intervals. P < 0.05 was considered statistically significant. CEO2 has increased for all groups (p < 0.001), but only Tf100 reached values close to ideal (82.20 - 87). Comparing mean CEO2 of Grav and Tf100 at the end of 60s, (82.20 and 65.87) there was a difference of approximately 20% between both techniques, since gravity-coupled mask only did not provide adequate oxygenation. There were no significant differences between groups Tf70 and Grav (65.87 and 62.67) in all studied moments, suggesting that the latter simulates a 70% CIO2 at 60 s. Mean Aw group CEO2 increased to 47.20 at 60s showing that this technique may be associated to unacceptable risk of hypoxemia. All situations of face mask coupling gradually increased CEO2, although with decreased oxygenation efficacy due to situations of face mask malposition. This study has shown the need for attention during oxygenation, using well coupled face mask and eliminating normal practices of moved away or gravity-coupled masks.

Feature-based attention to unconscious shapes and colors.

PubMed

Schmidt, Filipp; Schmidt, Thomas

2010-08-01

Two experiments employed feature-based attention to modulate the impact of completely masked primes on subsequent pointing responses. Participants processed a color cue to select a pair of possible pointing targets out of multiple targets on the basis of their color, and then pointed to the one of those two targets with a prespecified shape. All target pairs were preceded by prime pairs triggering either the correct or the opposite response. The time interval between cue and primes was varied to modulate the time course of feature-based attentional selection. In a second experiment, the roles of color and shape were switched. Pointing trajectories showed large priming effects that were amplified by feature-based attention, indicating that attention modulated the earliest phases of motor output. Priming effects as well as their attentional modulation occurred even though participants remained unable to identify the primes, indicating distinct processes underlying visual awareness, attention, and response control.

A methodology for testing fault-tolerant software

NASA Technical Reports Server (NTRS)

Andrews, D. M.; Mahmood, A.; Mccluskey, E. J.

1985-01-01

A methodology for testing fault tolerant software is presented. There are problems associated with testing fault tolerant software because many errors are masked or corrected by voters, limiter, or automatic channel synchronization. This methodology illustrates how the same strategies used for testing fault tolerant hardware can be applied to testing fault tolerant software. For example, one strategy used in testing fault tolerant hardware is to disable the redundancy during testing. A similar testing strategy is proposed for software, namely, to move the major emphasis on testing earlier in the development cycle (before the redundancy is in place) thus reducing the possibility that undetected errors will be masked when limiters and voters are added.

[Air-borne disease].

PubMed

Lameiro Vilariño, Carmen; del Campo Pérez, Victor M; Alonso Bürger, Susana; Felpeto Nodar, Irene; Guimarey Pérez, Rosa; Pérez Alvarellos, Alberto

2003-11-01

Respiratory protection is a factor which worries nursing professionals who take care of patients susceptible of transmitting microorganisms through the air more as every day passes. This type of protection covers the use of surgical or hygienic masks against the transmission of infection by airborne drops to the use of highly effective masks or respirators against the transmission of airborne diseases such as tuberculosis or SARS, a recently discovered disease. The adequate choice of this protective device and its correct use are fundamental in order to have an effective protection for exposed personnel. The authors summarize the main protective respiratory devices used by health workers, their characteristics and degree of effectiveness, as well as the circumstances under which each device is indicated for use.

2012 Mask Industry Survey

NASA Astrophysics Data System (ADS)

Malloy, Matt; Litt, Lloyd C.

2012-11-01

A survey supported by SEMATECH and administered by David Powell Consulting was sent to semiconductor industry leaders to gather information about the mask industry as an objective assessment of its overall condition. The survey was designed with the input of semiconductor company mask technologists and merchant mask suppliers. 2012 marks the 11th consecutive year for the mask industry survey. This year's survey and reporting structure are similar to those of the previous years with minor modifications based on feedback from past years and the need to collect additional data on key topics. Categories include general mask information, mask processing, data and write time, yield and yield loss, delivery times, and maintenance and returns. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the mask industry. Results, initial observations, and key comparisons between the 2011 and 2012 survey responses are shown here, including multiple indications of a shift towards the manufacturing of higher end photomasks.

Is masked priming modulated by memory load? A test of the automaticity of masked identity priming in lexical decision.

PubMed

Perea, Manuel; Marcet, Ana; Lozano, Mario; Gomez, Pablo

2018-05-29

One of the key assumptions of the masked priming lexical decision task (LDT) is that primes are processed without requiring attentional resources. Here, we tested this assumption by presenting a dual-task manipulation to increase memory load and measure the change in masked identity priming on the targets in the LDT. If masked priming does not require attentional resources, increased memory load should have no influence on the magnitude of the observed identity priming effects. We conducted two LDT experiments, using a within-subjects design, to investigate the effect of memory load (via a concurrent matching task Experiment 1 and a concurrent search task in Experiment 2) on masked identity priming. Results showed that the magnitude of masked identity priming on word targets was remarkably similar under high and low memory load. Thus, these experiments provide empirical evidence for the automaticity assumption of masked identity priming in the LDT.

The attentional blink is not affected by backward masking of T2, T2-mask SOA, or level of T2 impoverishment.

PubMed

Jannati, Ali; Spalek, Thomas M; Lagroix, Hayley E P; Di Lollo, Vincent

2012-02-01

Identification of the second of two targets (T2) is impaired when presented shortly after the first (T1). This attentional blink (AB) is thought to arise from a delay in T2 processing during which T2 is vulnerable to masking. Conventional studies have measured T2 accuracy which is constrained by the 100% ceiling. We avoided this problem by using a dynamic threshold-tracking procedure that is inherently free from ceiling constraints. In two experiments we examined how AB magnitude is affected by three masking-related factors: (a) presence/absence of T2 mask, (b) T2-mask stimulus onset asynchrony (SOA), and (c) level of T2 impoverishment (signal-to-noise ratio [SNR]). In Experiment 1, overall accuracy decreased with T2-mask SOA. The magnitude of the AB, however, was invariant with SOA and with mask presence/absence. Experiment 2 further showed that the AB was invariant with T2 SNR. The relationship among mask presence/absence, SOA, and T2 SNR and the AB is encompassed in a qualitative model.

Near real-time shadow detection and removal in aerial motion imagery application

NASA Astrophysics Data System (ADS)

Silva, Guilherme F.; Carneiro, Grace B.; Doth, Ricardo; Amaral, Leonardo A.; Azevedo, Dario F. G. de

2018-06-01

This work presents a method to automatically detect and remove shadows in urban aerial images and its application in an aerospace remote monitoring system requiring near real-time processing. Our detection method generates shadow masks and is accelerated by GPU programming. To obtain the shadow masks, we converted images from RGB to CIELCh model, calculated a modified Specthem ratio, and applied multilevel thresholding. Morphological operations were used to reduce shadow mask noise. The shadow masks are used in the process of removing shadows from the original images using the illumination ratio of the shadow/non-shadow regions. We obtained shadow detection accuracy of around 93% and shadow removal results comparable to the state-of-the-art while maintaining execution time under real-time constraints.

Variability-aware double-patterning layout optimization for analog circuits

NASA Astrophysics Data System (ADS)

Li, Yongfu; Perez, Valerio; Tripathi, Vikas; Lee, Zhao Chuan; Tseng, I.-Lun; Ong, Jonathan Yoong Seang

2018-03-01

The semiconductor industry has adopted multi-patterning techniques to manage the delay in the extreme ultraviolet lithography technology. During the design process of double-patterning lithography layout masks, two polygons are assigned to different masks if their spacing is less than the minimum printable spacing. With these additional design constraints, it is very difficult to find experienced layout-design engineers who have a good understanding of the circuit to manually optimize the mask layers in order to minimize color-induced circuit variations. In this work, we investigate the impact of double-patterning lithography on analog circuits and provide quantitative analysis for our designers to select the optimal mask to minimize the circuit's mismatch. To overcome the problem and improve the turn-around time, we proposed our smart "anchoring" placement technique to optimize mask decomposition for analog circuits. We have developed a software prototype that is capable of providing anchoring markers in the layout, allowing industry standard tools to perform automated color decomposition process.

Metacontrast masking and attention do not interact.

PubMed

Agaoglu, Sevda; Breitmeyer, Bruno; Ogmen, Haluk

2016-07-01

Visual masking and attention have been known to control the transfer of information from sensory memory to visual short-term memory. A natural question is whether these processes operate independently or interact. Recent evidence suggests that studies that reported interactions between masking and attention suffered from ceiling and/or floor effects. The objective of the present study was to investigate whether metacontrast masking and attention interact by using an experimental design in which saturation effects are avoided. We asked observers to report the orientation of a target bar randomly selected from a display containing either two or six bars. The mask was a ring that surrounded the target bar. Attentional load was controlled by set-size and masking strength by the stimulus onset asynchrony between the target bar and the mask ring. We investigated interactions between masking and attention by analyzing two different aspects of performance: (i) the mean absolute response errors and (ii) the distribution of signed response errors. Our results show that attention affects observers' performance without interacting with masking. Statistical modeling of response errors suggests that attention and metacontrast masking exert their effects by independently modulating the probability of "guessing" behavior. Implications of our findings for models of attention are discussed.

SU-D-BRA-02: Motion Assessment During Open Face Mask SRS Using CBCT and Surface Monitoring

DOE Office of Scientific and Technical Information (OSTI.GOV)

Williams, BB; Fox, CJ; Hartford, AC

Purpose: To assess the robustness of immobilization using open-face mask technology for linac-based stereotactic radiosurgery (SRS) with multiple non-coplanar arcs via repeated CBCT acquisition, with comparison to contemporaneous optical surface tracking data. Methods: 25 patients were treated in open faced masks with cranial SRS using 3–4 non-coplanar arcs. Repeated CBCT imaging was performed to verify the maintenance of proper patient positioning during treatment. Initial patient positioning was performed based on prescribed shifts and optical surface tracking. Positioning refinements employed rigid 3D-matching of the planning CT and CBCT images and were implemented via automated 6DOF couch control. CBCT imaging was repeatedmore » following the treatment of all non-transverse beams with associated couch kicks. Detected patient translations and rotations were recorded and automatically corrected. Optical surface tracking was applied throughout the treatments to monitor motion, and this contemporaneous patient positioning data was recorded to compare against CBCT data and 6DOF couch adjustments. Results: Initial patient positions were refined on average by translations of 3±1mm and rotations of ±0.9-degrees. Optical surface tracking corroborated couch corrections to within 1±1mm and ±0.4-degrees. Following treatment of the transverse and subsequent superior-oblique beam, average translations of 0.6±0.4mm and rotations of ±0.4-degrees were reported via CBCT, with optical surface tracking in agreement to within 1.1±0.6mm and ±0.6-degrees. Following treatment of the third beam, CBCT indicated additional translations of 0.4±0.2mm and rotations of ±0.3-degrees. Cumulative couch corrections resulted in 0.7 ± 0.4mm average magnitude translations and rotations of ±0.4-degrees. Conclusion: Based on CBCT measurements of patients during SRS, the open face mask maintained patient positioning to within 1.5mm and 1-degree with >95% confidence. Patient positioning determined by optical surface tracking agreed with CBCT assessment to within 1±1mm and ±0.6-degree rotations. These data support the use of 1–2mm PTV margins and repeated CBCT to maintain stereotactic positioning tolerances.« less

Digital Images and Human Vision

NASA Technical Reports Server (NTRS)

Watson, Andrew B.; Null, Cynthia H. (Technical Monitor)

1997-01-01

Processing of digital images destined for visual consumption raises many interesting questions regarding human visual sensitivity. This talk will survey some of these questions, including some that have been answered and some that have not. There will be an emphasis upon visual masking, and a distinction will be drawn between masking due to contrast gain control processes, and due to processes such as hypothesis testing, pattern recognition, and visual search.

Demonstration of an N7 integrated fab process for metal oxide EUV photoresist

NASA Astrophysics Data System (ADS)

De Simone, Danilo; Mao, Ming; Kocsis, Michael; De Schepper, Peter; Lazzarino, Frederic; Vandenberghe, Geert; Stowers, Jason; Meyers, Stephen; Clark, Benjamin L.; Grenville, Andrew; Luong, Vinh; Yamashita, Fumiko; Parnell, Doni

2016-03-01

Inpria has developed a directly patternable metal oxide hard-mask as a robust, high-resolution photoresist for EUV lithography. In this paper we demonstrate the full integration of a baseline Inpria resist into an imec N7 BEOL block mask process module. We examine in detail both the lithography and etch patterning results. By leveraging the high differential etch resistance of metal oxide photoresists, we explore opportunities for process simplification and cost reduction. We review the imaging results from the imec N7 block mask patterns and its process windows as well as routes to maximize the process latitude, underlayer integration, etch transfer, cross sections, etch equipment integration from cross metal contamination standpoint and selective resist strip process. Finally, initial results from a higher sensitivity Inpria resist are also reported. A dose to size of 19 mJ/cm2 was achieved to print pillars as small as 21nm.

77 FR 55768 - Airworthiness Directives; The Boeing Company Airplanes

Federal Register 2010, 2011, 2012, 2013, 2014

2012-09-11

... prompted by a report that during a test of the oxygen system, an operator found that the passenger oxygen masks did not properly flow oxygen, and that a loud noise occurred in the overhead area, which was... airplane oxygen system to ensure clamshell couplers are installed and fully latched, and corrective actions...

Implications of Sustained and Transient Channels for Theories of Visual Pattern Masking, Saccadic Suppression, and Information Processing

ERIC Educational Resources Information Center

Breitmeyer, Bruno G.; Ganz, Leo

1976-01-01

This paper reviewed briefly the major types of masking effects obtained with various methods and the major theories or models that have been proposed to account for these effects, and outlined a three-mechanism model of visual pattern masking based on psychophysical and neurophysiological properties of the visual system. (Author/RK)

Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials.

PubMed

Chen, Hao; Zhang, Qi; Chou, Stephen Y

2015-02-27

Sapphire nanopatterning is the key solution to GaN light emitting diode (LED) light extraction. One challenge is to etch deep nanostructures with a vertical sidewall in sapphire. Here, we report a study of the effects of two masking materials (SiO2 and Cr) and different etching recipes (the reaction gas ratio, the reaction pressure and the inductive power) in a chlorine-based (BCl3 and Cl2) inductively coupled plasma (ICP) etching of deep nanopillars in sapphire, and the etching process optimization. The masking materials were patterned by nanoimprinting. We have achieved high aspect ratio sapphire nanopillar arrays with a much steeper sidewall than the previous etching methods. We discover that the SiO2 mask has much slower erosion rate than the Cr mask under the same etching condition, leading to the deep cylinder-shaped nanopillars (122 nm diameter, 200 nm pitch, 170 nm high, flat top, and a vertical sidewall of 80° angle), rather than the pyramid-shaped shallow pillars (200 nm based diameter, 52 nm height, and 42° sidewall) resulted by using Cr mask. The processes developed are scalable to large volume LED manufacturing.

Directional Effects between Rapid Auditory Processing and Phonological Awareness in Children

ERIC Educational Resources Information Center

Johnson, Erin Phinney; Pennington, Bruce F.; Lee, Nancy Raitano; Boada, Richard

2009-01-01

Background: Deficient rapid auditory processing (RAP) has been associated with early language impairment and dyslexia. Using an auditory masking paradigm, children with language disabilities perform selectively worse than controls at detecting a tone in a backward masking (BM) condition (tone followed by white noise) compared to a forward masking…

Experimental Verification of Sparse Aperture Mask for Low Order Wavefront Sensing

NASA Astrophysics Data System (ADS)

Subedi, Hari; Kasdin, N. Jeremy

2017-01-01

To directly image exoplanets, future space-based missions are equipped with coronagraphs which manipulate the diffraction of starlight and create regions of high contrast called dark holes. Theoretically, coronagraphs can be designed to achieve the high level of contrast required to image exoplanets, which are billions of times dimmer than their host stars, however the aberrations caused by optical imperfections and thermal fluctuations cause the degradation of contrast in the dark holes. Focal plane wavefront control (FPWC) algorithms using deformable mirrors (DMs) are used to mitigate the quasi-static aberrations caused by optical imperfections. Although the FPWC methods correct the quasi-static aberrations, they are blind to dynamic errors caused by telescope jitter and thermal fluctuations. At Princeton's High Contrast Imaging Lab we have developed a new technique that integrates a sparse aperture mask with the coronagraph to estimate these low-order dynamic wavefront errors. This poster shows the effectiveness of a SAM Low-Order Wavefront Sensor in estimating and correcting these errors via simulation and experiment and compares the results to other methods, such as the Zernike Wavefront Sensor planned for WFIRST.

A daily, 1 km resolution data set of downscaled Greenland ice sheet surface mass balance (1958-2015)

NASA Astrophysics Data System (ADS)

Noël, Brice; van de Berg, Willem Jan; Machguth, Horst; Lhermitte, Stef; Howat, Ian; Fettweis, Xavier; van den Broeke, Michiel R.

2016-10-01

This study presents a data set of daily, 1 km resolution Greenland ice sheet (GrIS) surface mass balance (SMB) covering the period 1958-2015. Applying corrections for elevation, bare ice albedo and accumulation bias, the high-resolution product is statistically downscaled from the native daily output of the polar regional climate model RACMO2.3 at 11 km. The data set includes all individual SMB components projected to a down-sampled version of the Greenland Ice Mapping Project (GIMP) digital elevation model and ice mask. The 1 km mask better resolves narrow ablation zones, valley glaciers, fjords and disconnected ice caps. Relative to the 11 km product, the more detailed representation of isolated glaciated areas leads to increased precipitation over the southeastern GrIS. In addition, the downscaled product shows a significant increase in runoff owing to better resolved low-lying marginal glaciated regions. The combined corrections for elevation and bare ice albedo markedly improve model agreement with a newly compiled data set of ablation measurements.

Affect of the unconscious: visually suppressed angry faces modulate our decisions.

PubMed

Almeida, Jorge; Pajtas, Petra E; Mahon, Bradford Z; Nakayama, Ken; Caramazza, Alfonso

2013-03-01

Emotional and affective processing imposes itself over cognitive processes and modulates our perception of the surrounding environment. In two experiments, we addressed the issue of whether nonconscious processing of affect can take place even under deep states of unawareness, such as those induced by interocular suppression techniques, and can elicit an affective response that can influence our understanding of the surrounding environment. In Experiment 1, participants judged the likeability of an unfamiliar item--a Chinese character--that was preceded by a face expressing a particular emotion (either happy or angry). The face was rendered invisible through an interocular suppression technique (continuous flash suppression; CFS). In Experiment 2, backward masking (BM), a less robust masking technique, was used to render the facial expressions invisible. We found that despite equivalent phenomenological suppression of the visual primes under CFS and BM, different patterns of affective processing were obtained with the two masking techniques. Under BM, nonconscious affective priming was obtained for both happy and angry invisible facial expressions. However, under CFS, nonconscious affective priming was obtained only for angry facial expressions. We discuss an interpretation of this dissociation between affective processing and visual masking techniques in terms of distinct routes from the retina to the amygdala.

Spin-on metal oxide materials for N7 and beyond patterning applications

NASA Astrophysics Data System (ADS)

Mannaert, G.; Altamirano-Sanchez, E.; Hopf, T.; Sebaai, F.; Lorant, C.; Petermann, C.; Hong, S.-E.; Mullen, S.; Wolfer, E.; Mckenzie, D.; Yao, H.; Rahman, D.; Cho, J.-Y.; Padmanaban, M.; Piumi, D.

2017-04-01

There is a growing interest in new spin on metal oxide hard mask materials for advanced patterning solutions both in BEOL and FEOL processing. Understanding how these materials respond to plasma conditions may create a competitive advantage. In this study patterning development was done for two challenging FEOL applications where the traditional Si based films were replaced by EMD spin on metal oxides, which acted as highly selective hard masks. The biggest advantage of metal oxide hard masks for advanced patterning lays in the process window improvement at lower or similar cost compared to other existing solutions.

Recognizing speech under a processing load: dissociating energetic from informational factors.

PubMed

Mattys, Sven L; Brooks, Joanna; Cooke, Martin

2009-11-01

Effects of perceptual and cognitive loads on spoken-word recognition have so far largely escaped investigation. This study lays the foundations of a psycholinguistic approach to speech recognition in adverse conditions that draws upon the distinction between energetic masking, i.e., listening environments leading to signal degradation, and informational masking, i.e., listening environments leading to depletion of higher-order, domain-general processing resources, independent of signal degradation. We show that severe energetic masking, such as that produced by background speech or noise, curtails reliance on lexical-semantic knowledge and increases relative reliance on salient acoustic detail. In contrast, informational masking, induced by a resource-depleting competing task (divided attention or a memory load), results in the opposite pattern. Based on this clear dissociation, we propose a model of speech recognition that addresses not only the mapping between sensory input and lexical representations, as traditionally advocated, but also the way in which this mapping interfaces with general cognition and non-linguistic processes.

Contribution of Binaural Masking Release to Improved Speech Intelligibility for different Masker types.

PubMed

Sutojo, Sarinah; van de Par, Steven; Schoenmaker, Esther

2018-06-01

In situations with competing talkers or in the presence of masking noise, speech intelligibility can be improved by spatially separating the target speaker from the interferers. This advantage is generally referred to as spatial release from masking (SRM) and different mechanisms have been suggested to explain it. One proposed mechanism to benefit from spatial cues is the binaural masking release, which is purely stimulus driven. According to this mechanism, the spatial benefit results from differences in the binaural cues of target and masker, which need to appear simultaneously in time and frequency to improve the signal detection. In an alternative proposed mechanism, the differences in the interaural cues improve the segregation of auditory streams, a process, which involves top-down processing rather than being purely stimulus driven. Other than the cues that produce binaural masking release, the interaural cue differences between target and interferer required to improve stream segregation do not have to appear simultaneously in time and frequency. This study is concerned with the contribution of binaural masking release to SRM for three masker types that differ with respect to the amount of energetic masking they exert. Speech intelligibility was measured, employing a stimulus manipulation that inhibits binaural masking release, and analyzed with a metric to account for the number of better-ear glimpses. Results indicate that the contribution of the stimulus-driven binaural masking release plays a minor role while binaural stream segregation and the availability of glimpses in the better ear had a stronger influence on improving the speech intelligibility. This article is protected by copyright. All rights reserved. This article is protected by copyright. All rights reserved.

Hot melt extrusion of ion-exchange resin for taste masking.

PubMed

Tan, David Cheng Thiam; Ong, Jeremy Jianming; Gokhale, Rajeev; Heng, Paul Wan Sia

2018-05-30

Taste masking is important for some unpleasant tasting bioactives in oral dosage forms. Among many methods available for taste-masking, use of ion-exchange resin (IER) holds promise. IER combined with hot melt extrusion (HME) may offer additional advantages over solvent methods. IER provides taste masking by complexing with the drug ions and preventing drug dissolution in the mouth. Drug-IER complexation approaches described in literatures are mainly based either on batch processing or column eluting. These methods of drug-IER complexation have obvious limitations such as high solvent volume requirements, multiprocessing steps and extended processing time. Thus, the objective of this study was to develop a single-step, solvent-free, continuous HME process for complexation of drug-IER. The screening study evaluated drug to IER ratio, types of IER and drug complexation methods. In the screening study, a potassium salt of a weakly acidic carboxylate-based cationic IER was found suitable for the HME method. Thereafter, optimization study was conducted by varying HME process parameters such as screw speed, extrusion temperature and drug to IER ratio. It was observed that extrusion temperature and drug to IER ratio are imperative in drug-IER complexation through HME. In summary, this study has established the feasibility of a continuous complexation method for drug to IER using HME for taste masking. Copyright © 2018 Elsevier B.V. All rights reserved.

Improvement in the cloud mask for Terra MODIS mitigated by electronic crosstalk correction in the 6.7 μm and 8.5 μm channels

NASA Astrophysics Data System (ADS)

Sun, Junqiang; Madhavan, S.; Wang, M.

2016-09-01

MODerate resolution Imaging Spectroradiometer (MODIS), a remarkable heritage sensor in the fleet of Earth Observing System for the National Aeronautics and Space Administration (NASA) is in space orbit on two spacecrafts. They are the Terra (T) and Aqua (A) platforms which tracks the Earth in the morning and afternoon orbits. T-MODIS has continued to operate over 15 years easily surpassing the 6 year design life time on orbit. Of the several science products derived from MODIS, one of the primary derivatives is the MODIS Cloud Mask (MOD035). The cloud mask algorithm incorporates several of the MODIS channels in both reflective and thermal infrared wavelengths to identify cloud pixels from clear sky. Two of the thermal infrared channels used in detecting clouds are the 6.7 μm and 8.5 μm. Based on a difference threshold with the 11 μm channel, the 6.7 μm channel helps in identifying thick high clouds while the 8.5 μm channel being useful for identifying thin clouds. Starting 2010, it had been observed in the cloud mask products that several pixels have been misclassified due to the change in the thermal band radiometry. The long-term radiometric changes in these thermal channels have been attributed to the electronic crosstalk contamination. In this paper, the improvement in cloud detection using the 6.7 μm and 8.5 μm channels are demonstrated using the electronic crosstalk correction. The electronic crosstalk phenomena analysis and characterization were developed using the regular moon observation of MODIS and reported in several works. The results presented in this paper should significantly help in improving the MOD035 product, maintaining the long term dataset from T-MODIS which is important for global change monitoring.

Effectiveness of base-of-skull immobilization system in a compact proton therapy setting.

PubMed

Shafai-Erfani, Ghazal; Willoughby, Twyla; Ramakrishna, Naren; Meeks, Sanford; Kelly, Patrick; Zeidan, Omar

2018-05-01

The purpose of this study was to investigate daily repositioning accuracy by analyzing inter- and intra-fractional uncertainties associated with patients treated for intracranial or base of skull tumors in a compact proton therapy system with 6 degrees of freedom (DOF) robotic couch and a thermoplastic head mask indexed to a base of skull (BoS) frame. Daily orthogonal kV alignment images at setup position before and after daily treatments were analyzed for 33 patients. The system was composed of a new type of thermoplastic mask, a bite block, and carbon-fiber BoS couch-top insert specifically designed for proton therapy treatments. The correctional shifts in robotic treatment table with 6 DOF were evaluated and recorded based on over 1500 planar kV image pairs. Correctional shifts for patients with and without bite blocks were compared. Systematic and random errors were evaluated for all 6 DOF coordinates available for daily vector corrections. Uncertainties associated with geometrical errors and their sources, in addition to robustness analysis of various combinations of immobilization components were presented. Analysis of 644 fractions including patients with and without a bite block shows that the BoS immobilization system is capable of maintaining intra-fraction localization with submillimeter accuracy (in nearly 83%, 86%, 95% of cases along SI, LAT, and PA, respectively) in translational coordinates and subdegree precision (in 98.85%, 98.85%, and 96.4% of cases for roll, pitch, and yaw respectively) in rotational coordinates. The system overall fares better in intra-fraction localization precision compared to previously reported particle therapy immobilization systems. The use of a mask-attached type bite block has marginal impact on inter- or intra-fraction uncertainties compared to no bite block. © 2018 The Authors. Journal of Applied Clinical Medical Physics published by Wiley Periodicals, Inc. on behalf of American Association of Physicists in Medicine.

Beyond a mask and against the bottleneck: retroactive dual-task interference during working memory consolidation of a masked visual target.

PubMed

Nieuwenstein, Mark; Wyble, Brad

2014-06-01

While studies on visual memory commonly assume that the consolidation of a visual stimulus into working memory is interrupted by a trailing mask, studies on dual-task interference suggest that the consolidation of a stimulus can continue for several hundred milliseconds after a mask. As a result, estimates of the time course of working memory consolidation differ more than an order of magnitude. Here, we contrasted these opposing views by examining if and for how long the processing of a masked display of visual stimuli can be disturbed by a trailing 2-alternative forced choice task (2-AFC; a color discrimination task or a visual or auditory parity judgment task). The results showed that the presence of the 2-AFC task produced a pronounced retroactive interference effect that dissipated across stimulus onset asynchronies of 250-1,000 ms, indicating that the processing elicited by the 2-AFC task interfered with the gradual consolidation of the earlier shown stimuli. Furthermore, this interference effect occurred regardless of whether the to-be-remembered stimuli comprised a string of letters or an unfamiliar complex visual shape, and it occurred regardless of whether these stimuli were masked. Conversely, the interference effect was reduced when the memory load for the 1st task was reduced, or when the 2nd task was a color detection task that did not require decision making. Taken together, these findings show that the formation of a durable and consciously accessible working memory trace for a briefly shown visual stimulus can be disturbed by a trailing 2-AFC task for up to several hundred milliseconds after the stimulus has been masked. By implication, the current findings challenge the common view that working memory consolidation involves an immutable central processing bottleneck, and they also make clear that consolidation does not stop when a stimulus is masked. PsycINFO Database Record (c) 2014 APA, all rights reserved.

Nanostructure Secondary-Mirror Apodizing Mask for Transmitter Signal Suppression in a Duplex Telescope

NASA Technical Reports Server (NTRS)

Hagopian, John; Livas, Jeffrey; Shiri, Shahram; Getty, Stephanie; Tveekrem, June; Butler, James

2012-01-01

A document discusses a nanostructure apodizing mask, made of multi-walled carbon nanotubes, that is applied to the centers (or in and around the holes) of the secondary mirrors of telescopes that are used to interferometrically measure the strain of space-time in response to gravitational waves. The shape of this ultra-black mask can be adjusted to provide a smooth transition to the clear aperture of the secondary mirror to minimize diffracted light. Carbon nanotubes grown on silicon are a viable telescope mirror substrate, and can absorb significantly more light than other black treatments. The hemispherical reflectance of multi-walled carbon nanotubes grown at GSFC is approximately 3 to 10 times better than a standard aerospace paint used for stray light control. At the LISA (Laser Interferometer Space Antenna) wavelength of 1 micron, the advantage over paint is a factor of 10. Primarily, in the center of the secondary mirror (in the region of central obscuration, where no received light is lost) a black mask is applied to absorb transmitted light that could be reflected back into the receiver. In the LISA telescope, this is in the center couple of millimeters. The shape of this absorber is critical to suppress diffraction at the edge. By using the correct shape, the stray light can be reduced by approximately 10 to the 9 orders of magnitude versus no center mask. The effect of the nanotubes has been simulated in a stray-light model. The effect of the apodizing mask has been simulated in a near-field diffraction model. Specifications are geometry-dependent, but the baseline design for the LISA telescope has been modeled as well. The coatings are somewhat fragile, but work is continuing to enhance adhesion.

Automated estimation of river bathymetry using change detection based on Landsat imagery and river morphological models

NASA Astrophysics Data System (ADS)

Donchyts, G.; Jagers, B.; Van De Giesen, N.; Baart, F.; van Dam, A.

2015-12-01

Free global data sets on river bathymetry at global scale are not yet available. While one of the mostly used free elevation datasets, SRTM, provides data on location and elevation of rivers, its quality usually is very limited. This happens mainly because water mask was derived from older satellite imagery, such as Landsat 5, and also because the radar instruments perform bad near water, especially with the presence of vegetation in riparian zone. Additional corrections are required before it can be used for applications such as higher resolution surface water flow simulations. On the other hand, medium resolution satellite imagery from Landsat mission can be used to estimate water mask changes during the last 40 years. Water mask from Landsat imagery can be derived on per-image basis, in some cases, resulting in up to one thousand water masks. For rivers where significant water mask changes can be observed, this information can be used to improve quality of existing digital elevation models in the range between minimum and maximum observed water levels. Furthermore, we can use this information to further estimate river bathymetry using morphological models. We will evaluate how Landsat imagery can be used to estimate river bathymetry and will point to cases of significant inconsistencies between SRTM and Landsat-based water masks. We will also explore other challenges on a way to automated estimation of river bathymetry using fusion of numerical morphological models and remote sensing data. Some of them include automatic generation of model mesh, estimation of river morphodynamic properties and issues related to spectral method used to analyse optical satellite imagery.

Modular multiaperatures for light sensors

NASA Technical Reports Server (NTRS)

Rizzo, A. A.

1977-01-01

Process involves electroplating multiaperature masks as unit, eliminating alinement and assembly difficulties previously encountered. Technique may be applied to masks in automated and surveillance light systems, when precise, wide angle field of view is needed.

It's a Fine Season for Masks.

ERIC Educational Resources Information Center

Kennedy, Patricia

1999-01-01

Describes an art lesson, inspired by Giuseppe Arcimboldo's "Seasons" series, in which students construct masks representing one of the four seasons. Discusses the process and lists words and phrases associated with each season. (CMK)

Vibrotactile masking experiments reveal accelerated somatosensory processing in congenitally blind braille readers.

PubMed

Bhattacharjee, Arindam; Ye, Amanda J; Lisak, Joy A; Vargas, Maria G; Goldreich, Daniel

2010-10-27

Braille reading is a demanding task that requires the identification of rapidly varying tactile patterns. During proficient reading, neighboring characters impact the fingertip at ∼100 ms intervals, and adjacent raised dots within a character at 50 ms intervals. Because the brain requires time to interpret afferent sensorineural activity, among other reasons, tactile stimuli separated by such short temporal intervals pose a challenge to perception. How, then, do proficient Braille readers successfully interpret inputs arising from their fingertips at such rapid rates? We hypothesized that somatosensory perceptual consolidation occurs more rapidly in proficient Braille readers. If so, Braille readers should outperform sighted participants on masking tasks, which demand rapid perceptual processing, but would not necessarily outperform the sighted on tests of simple vibrotactile sensitivity. To investigate, we conducted two-interval forced-choice vibrotactile detection, amplitude discrimination, and masking tasks on the index fingertips of 89 sighted and 57 profoundly blind humans. Sighted and blind participants had similar unmasked detection (25 ms target tap) and amplitude discrimination (compared with 100 μm reference tap) thresholds, but congenitally blind Braille readers, the fastest readers among the blind participants, exhibited significantly less masking than the sighted (masker, 50 Hz, 50 μm; target-masker delays, ±50 and ±100 ms). Indeed, Braille reading speed correlated significantly and specifically with masking task performance, and in particular with the backward masking decay time constant. We conclude that vibrotactile sensitivity is unchanged but that perceptual processing is accelerated in congenitally blind Braille readers.

Vibrotactile masking experiments reveal accelerated somatosensory processing in congenitally blind Braille readers

PubMed Central

Bhattacharjee, Arindam; Ye, Amanda J.; Lisak, Joy A.; Vargas, Maria G.; Goldreich, Daniel

2010-01-01

Braille reading is a demanding task that requires the identification of rapidly varying tactile patterns. During proficient reading, neighboring characters impact the fingertip at about 100-ms intervals, and adjacent raised dots within a character at 50-ms intervals. Because the brain requires time to interpret afferent sensorineural activity, among other reasons, tactile stimuli separated by such short temporal intervals pose a challenge to perception. How, then, do proficient Braille readers successfully interpret inputs arising from their fingertips at such rapid rates? We hypothesized that somatosensory perceptual consolidation occurs more rapidly in proficient Braille readers. If so, Braille readers should outperform sighted participants on masking tasks, which demand rapid perceptual processing, but would not necessarily outperform the sighted on tests of simple vibrotactile sensitivity. To investigate, we conducted two-interval forced-choice vibrotactile detection, amplitude discrimination, and masking tasks on the index fingertips of 89 sighted and 57 profoundly blind humans. Sighted and blind participants had similar unmasked detection (25-ms target tap) and amplitude discrimination (compared to 100-micron reference tap) thresholds, but congenitally blind Braille readers, the fastest readers among the blind participants, exhibited significantly less masking than the sighted (masker: 50-Hz, 50-micron; target-masker delays ±50 and ±100 ms). Indeed, Braille reading speed correlated significantly and specifically with masking task performance, and in particular with the backward masking decay time constant. We conclude that vibrotactile sensitivity is unchanged, but that perceptual processing is accelerated in congenitally blind Braille readers. PMID:20980584

Acoustically Enhanced Electroplating Being Developed

NASA Technical Reports Server (NTRS)

Oeftering, Richard C.

2002-01-01

In cooperation with the NASA Glenn Research Center, Alchemitron Corp. is developing the Acoustically Enhanced Electroplating Process (AEEP), a new technique of employing nonlinear ultrasonics to enhance electroplating. The applications range from electroplating full-panel electronic circuit boards to electroplating microelectronics and microelectromechanical systems (MEMS) devices. In a conventional plating process, the surface area to be plated is separated from the nonplated areas by a temporary mask. The mask may take many forms, from a cured liquid coating to a simple tape. Generally, the mask is discarded when the plating is complete, creating a solid waste product that is often an environmental hazard. The labor and materials involved with the layout, fabrication, and tooling of masks is a primary source of recurring and nonrecurring production costs. The objective of this joint effort, therefore, is to reduce or eliminate the need for masks. AEEP improves selective plating processes by using directed beams of high-intensity acoustic waves to create nonlinear effects that alter the fluid dynamic and thermodynamic behavior of the plating process. It relies on two effects: acoustic streaming and acoustic heating. Acoustic streaming is observed when a high-intensity acoustic beam creates a liquid current within the beam. The liquid current can be directed as the beam is directed and, thus, users can move liquid around as desired without using pumps and nozzles. The current of the electroplating electrolyte, therefore, can be directed at distinct target areas where electroplating is desired. The current delivers fresh electrolyte to the target area while flushing away the spent electrolyte. This dramatically increases the plating rate in the target area. In addition, acoustic heating of both the liquid in the beam and the target surface increases the chemical reaction rate, which further increases the plating rate. The combined effects of acoustic streaming and heating accelerate the deposition of plating in that area and, thus, provide an effect similar to a mask but without the costs of masking. AEEP further improves the plating process by clearing debris and bubbles from the surface by acoustic radiation pressure and acoustic streaming.

Temporal mapping and analysis

NASA Technical Reports Server (NTRS)

O'Hara, Charles G. (Inventor); Shrestha, Bijay (Inventor); Vijayaraj, Veeraraghavan (Inventor); Mali, Preeti (Inventor)

2011-01-01

A compositing process for selecting spatial data collected over a period of time, creating temporal data cubes from the spatial data, and processing and/or analyzing the data using temporal mapping algebra functions. In some embodiments, the temporal data cube is creating a masked cube using the data cubes, and computing a composite from the masked cube by using temporal mapping algebra.

Suppression of Mirror Generalization for Reversible Letters: Evidence from Masked Priming

ERIC Educational Resources Information Center

Perea, Manuel; Moret-Tatay, Carmen; Panadero, Victoria

2011-01-01

Readers of the Roman script must "unlearn" some forms of mirror generalization when processing printed stimuli (i.e., herb and herd are different words). Here we examine whether the suppression of mirror generalization is a process that affects all letters or whether it mostly affects reversible letters (i.e., b/d). Three masked priming lexical…

Nanofabrication on unconventional substrates using transferred hard masks

DOE PAGES

Li, Luozhou; Bayn, Igal; Lu, Ming; ...

2015-01-15

Here, a major challenge in nanofabrication is to pattern unconventional substrates that cannot be processed for a variety of reasons, such as incompatibility with spin coating, electron beam lithography, optical lithography, or wet chemical steps. Here, we present a versatile nanofabrication method based on re-usable silicon membrane hard masks, patterned using standard lithography and mature silicon processing technology. These masks, transferred precisely onto targeted regions, can be in the millimetre scale. They allow for fabrication on a wide range of substrates, including rough, soft, and non-conductive materials, enabling feature linewidths down to 10 nm. Plasma etching, lift-off, and ion implantationmore » are realized without the need for scanning electron/ion beam processing, UV exposure, or wet etching on target substrates.« less

Mask industry assessment: 2008

NASA Astrophysics Data System (ADS)

Hughes, Greg; Yun, Henry

2008-10-01

Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH and administered by David Powell Consulting to gather information about the mask industry as an objective assessment of its overall condition. The survey is designed with the input of semiconductor company mask technologists, merchant mask suppliers, and industry equipment makers. This year's assessment is the seventh in the current series of annual reports. With ongoing industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey is basically the same as the 2005 through 2007 surveys. Questions are grouped into categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that create a detailed profile of both the business and technical status of the critical mask industry.

Mask industry assessment trend analysis: 2010

NASA Astrophysics Data System (ADS)

Hughes, Greg; Yun, Henry

2010-05-01

Microelectronics industry leaders consistently cite the cost and cycle time of mask technology and mask supply as top critical issues. A survey was designed with input from semiconductor company mask technologists and merchant mask suppliers and support from SEMATECH to gather information about the mask industry as an objective assessment of its overall condition. This year's assessment was the eighth in the current series of annual reports. Its data were presented in detail at BACUS, and the detailed trend analysis is presented at EMLC. With continued industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. Its results will be used to guide future investments on critical path issues. This year's survey is basically the same as the surveys in 2005 through 2009. Questions are grouped into six categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that creates a detailed profile of both the business and technical status of the critical mask industry.

The 2002 to 2010 mask survey trend analysis

NASA Astrophysics Data System (ADS)

Hughes, Greg; Chan, David

2011-03-01

Microelectronics industry leaders consistently cite the cost and cycle time of mask technology and mask supply as top critical issues. A survey was designed with input from semiconductor company mask technologists and merchant mask suppliers and support from SEMATECH to gather information about the mask industry as an objective assessment of its overall condition. This year's assessment was the ninth in the current series of annual reports. Its data were presented in detail at BACUS, and the detailed trend analysis is presented at EMLC. With continued industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. Results will be used to guide future investments in critical path issues. This year's survey is basically the same as the 2005 through 2010 surveys. Questions are grouped into six categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category are multiple questions that ultimately create a detailed profile of both the business and technical status of the critical mask industry.

Coastal Algorithms and On-Demand Processing- The Lessons Learnt from CoastColour for Sentinel 3

NASA Astrophysics Data System (ADS)

Brockmann, Carsten; Doerffer, Roland; Boettcher, Martin; Kramer, Uwe; Zuhlke, Marco; Pinnock, Simon

2015-12-01

The ESA DUE CoastColour Project has been initiated to provide water quality products for important costal zones globally. A new 5 component bio-optical model was developed and used in a 3-step approach for regional processing of ocean colour data. The L1P step consists of radiometric and geometric system corrections, and top-of-atmosphere pixel classification including cloud screening, sun glint risk masking or detection of floating vegetation. The second step includes the atmospheric correction and is providing the L2R product, which comprises marine reflectances with error characterisation and normalisation. The third step is the in-water processing which produces IOPs, attenuation coefficient and water constituent concentrations. Each of these steps will benefit from the additional bands on OLCI. The 5 component bio-optical model will already be used in the standard ESA processing of OLCI, and also part of the pixel classification methods will be part of the standard products. Other algorithm adaptation are in preparation. Another important advantage of the CoastColour approach is the highly configurable processing chain which allows adaptation to the individual characteristics of the area of interest, temporal window, algorithm parametrisation and processing chain configuration. This flexibility is made available to data users through the CoastColour on-demand processing service. The complete global MERIS Full and Reduced Resolution data archive is accessible, covering the time range from 17. May 2002 until 08. April 2012, which is almost 200TB of in-put data available online. The CoastColour on-demand processing service can serve as a model for hosted processing, where the software is moved to the data instead of moving the data to the users, which will be a challenge with the large amount of data coming from Sentinel 3.

Cryptosystem for Securing Image Encryption Using Structured Phase Masks in Fresnel Wavelet Transform Domain

NASA Astrophysics Data System (ADS)

Singh, Hukum

2016-12-01

A cryptosystem for securing image encryption is considered by using double random phase encoding in Fresnel wavelet transform (FWT) domain. Random phase masks (RPMs) and structured phase masks (SPMs) based on devil's vortex toroidal lens (DVTL) are used in spatial as well as in Fourier planes. The images to be encrypted are first Fresnel transformed and then single-level discrete wavelet transform (DWT) is apply to decompose LL,HL, LH and HH matrices. The resulting matrices from the DWT are multiplied by additional RPMs and the resultants are subjected to inverse DWT for the encrypted images. The scheme is more secure because of many parameters used in the construction of SPM. The original images are recovered by using the correct parameters of FWT and SPM. Phase mask SPM based on DVTL increases security that enlarges the key space for encryption and decryption. The proposed encryption scheme is a lens-less optical system and its digital implementation has been performed using MATLAB 7.6.0 (R2008a). The computed value of mean-squared-error between the retrieved and the input images shows the efficacy of scheme. The sensitivity to encryption parameters, robustness against occlusion, entropy and multiplicative Gaussian noise attacks have been analysed.

The relationship between masking and short-term consolidation during recall from visual working memory.

PubMed

Ricker, Timothy J; Sandry, Joshua

2018-04-10

The presentation of a similar but irrelevant stimulus immediately following presentation of a memory item is called masking. Masking is known to reduce performance on working memory tests. This is the type of memory used to hold information in mind for brief periods of time for use in ongoing cognition. Two approaches to understanding masking effects have been proposed in different literatures. Working memory researchers often assume that the reduction in working memory performance after masking is because masking interferes with a transient sensory representation that is needed to complete consolidation into a working memory state. Researchers focused on the attentional blink, a finding that attention cannot be directed to new stimuli during working memory consolidation, have an alternative theory. Attentional blink researchers assume that masking slows the short-term consolidation process, thereby extending the length of the attentional blink. In two experiments, we contrast these two approaches to explaining masking effects and investigate the validity of both hypotheses. Some aspects of both approaches are validated, but neither theoretical perspective alone sufficiently explains the entire pattern of results. © 2018 New York Academy of Sciences.

Utilization of optical emission endpoint in photomask dry etch processing

NASA Astrophysics Data System (ADS)

Faure, Thomas B.; Huynh, Cuc; Lercel, Michael J.; Smith, Adam; Wagner, Thomas

2002-03-01

Use of accurate and repeatable endpoint detection during dry etch processing of photomask is very important for obtaining good mask mean-to-target and CD uniformity performance. It was found that the typical laser reflectivity endpoint detecting system used on photomask dry etch systems had several key limitations that caused unnecessary scrap and non-optimum image size performance. Consequently, work to develop and implement use of a more robust optical emission endpoint detection system for chrome dry etch processing of photomask was performed. Initial feasibility studies showed that the emission technique was sensitive enough to monitor pattern loadings on contact and via level masks down to 3 percent pattern coverage. Additional work was performed to further improve this to 1 percent pattern coverage by optimizing the endpoint detection parameters. Comparison studies of mask mean-to-target performance and CD uniformity were performed with the use of optical emission endpoint versus laser endpoint for masks built using TOK IP3600 and ZEP 7000 resist systems. It was found that an improvement in mean-to-target performance and CD uniformity was realized on several types of production masks. In addition, part-to-part endpoint time repeatability was found to be significantly improved with the use of optical emission endpoint.

Artifacts reduction in VIR/Dawn data.

PubMed

Carrozzo, F G; Raponi, A; De Sanctis, M C; Ammannito, E; Giardino, M; D'Aversa, E; Fonte, S; Tosi, F

2016-12-01

Remote sensing images are generally affected by different types of noise that degrade the quality of the spectral data (i.e., stripes and spikes). Hyperspectral images returned by a Visible and InfraRed (VIR) spectrometer onboard the NASA Dawn mission exhibit residual systematic artifacts. VIR is an imaging spectrometer coupling high spectral and spatial resolutions in the visible and infrared spectral domain (0.25-5.0 μm). VIR data present one type of noise that may mask or distort real features (i.e., spikes and stripes), which may lead to misinterpretation of the surface composition. This paper presents a technique for the minimization of artifacts in VIR data that include a new instrument response function combining ground and in-flight radiometric measurements, correction of spectral spikes, odd-even band effects, systematic vertical stripes, high-frequency noise, and comparison with ground telescopic spectra of Vesta and Ceres. We developed a correction of artifacts in a two steps process: creation of the artifacts matrix and application of the same matrix to the VIR dataset. In the approach presented here, a polynomial function is used to fit the high frequency variations. After applying these corrections, the resulting spectra show improvements of the quality of the data. The new calibrated data enhance the significance of results from the spectral analysis of Vesta and Ceres.

Unconscious analyses of visual scenes based on feature conjunctions.

PubMed

Tachibana, Ryosuke; Noguchi, Yasuki

2015-06-01

To efficiently process a cluttered scene, the visual system analyzes statistical properties or regularities of visual elements embedded in the scene. It is controversial, however, whether those scene analyses could also work for stimuli unconsciously perceived. Here we show that our brain performs the unconscious scene analyses not only using a single featural cue (e.g., orientation) but also based on conjunctions of multiple visual features (e.g., combinations of color and orientation information). Subjects foveally viewed a stimulus array (duration: 50 ms) where 4 types of bars (red-horizontal, red-vertical, green-horizontal, and green-vertical) were intermixed. Although a conscious perception of those bars was inhibited by a subsequent mask stimulus, the brain correctly analyzed the information about color, orientation, and color-orientation conjunctions of those invisible bars. The information of those features was then used for the unconscious configuration analysis (statistical processing) of the central bars, which induced a perceptual bias and illusory feature binding in visible stimuli at peripheral locations. While statistical analyses and feature binding are normally 2 key functions of the visual system to construct coherent percepts of visual scenes, our results show that a high-level analysis combining those 2 functions is correctly performed by unconscious computations in the brain. (c) 2015 APA, all rights reserved).

Simulation of 'pathologic' changes in ICG waveforms resulting from superposition of the 'preejection' and ejection waves induced by left ventricular contraction

NASA Astrophysics Data System (ADS)

Ermishkin, V. V.; Kolesnikov, V. A.; Lukoshkova, E. V.; Sonina, R. S.

2013-04-01

The impedance cardiography (ICG) is widely used for beat-to-beat noninvasive evaluation of the left ventricular stroke volume and contractility. It implies the correct determination of the ejection start and end points and the amplitudes of certain peaks in the differentiated impedance cardiogram. An accurate identification of ejection onset by ICG is often problematic, especially in the cardiologic patients, due to peculiar waveforms. Using a simple theoretical model, we tested the hypothesis that two major processes are responsible for the formation of impedance systolic wave: (1) the changes in the heart geometry and surrounding vessels produced by ventricular contraction, which occur during the isovolumic phase and precede ejection, and (2) expansion of aorta and adjacent arteries during the ejection phase. The former process initiates the preejection wave WpE and the latter triggers the ejection wave WEj. The model predicts a potential mechanism of generating the abnormal shapes of dZ/dt due to the presence of preejection waves and explains the related errors in ICG time and amplitude parameters. An appropriate decomposition method is a promising way to avoid the masking effects of these waves and a further step to correct determination of the onset of ejection and the corresponding peak amplitudes from 'pathologically shaped' ICG signals.

Masking interrupts figure-ground signals in V1.

PubMed

Lamme, Victor A F; Zipser, Karl; Spekreijse, Henk

2002-10-01

In a backward masking paradigm, a target stimulus is rapidly (<100 msec) followed by a second stimulus. This typically results in a dramatic decrease in the visibility of the target stimulus. It has been shown that masking reduces responses in V1. It is not known, however, which process in V1 is affected by the mask. In the past, we have shown that in V1, modulations of neural activity that are specifically related to figure-ground segregation can be recorded. Here, we recorded from awake macaque monkeys, engaged in a task where they had to detect figures from background in a pattern backward masking paradigm. We show that the V1 figure-ground signals are selectively and fully suppressed at target-mask intervals that psychophysically result in the target being invisible. Initial response transients, signalling the features that make up the scene, are not affected. As figure-ground modulations depend on feedback from extrastriate areas, these results suggest that masking selectively interrupts the recurrent interactions between V1 and higher visual areas.

Ambulatory Blood Pressure Monitoring in the Diagnosis and Treatment of Hypertension.

PubMed

Islam, Md Shahidul

2017-01-01

Clinicians should take initiatives to establish ambulatory blood pressure monitoring (ABPM) services in their own practice, or to ensure that they have access to such services elsewhere. Whenever possible, ABPM should be performed in suitable cases, where it is likely to deliver clinically useful information for making a correct diagnosis, or for tailoring the anti-hypertensive treatment regimen for each individual patient. ABPM is clinically useful, among others, for identifying people with "masked normotension", "masked hypertension", "sleep-time hypertension", and "reduced decline of sleep-time blood pressure". This review briefly outlines the rationales for the use of ABPM, interpretations of the ABPM-derived parameters, and the advantages of ABPM in decision making in the management of hypertension.

PMJ panel discussion overview on mask complexities, cost, and cycle time in 32-nm system LSI generation: conflict or concurrent?

NASA Astrophysics Data System (ADS)

Hosono, Kunihiro; Kato, Kokoro

2008-10-01

This is a report on a panel discussion organized in Photomask Japan 2008, where the challenges about "Mask Complexities, Cost, and Cycle Time in 32-nm System LSI Generation" were addressed to have a look over the possible solutions from the standpoints of chipmaker, commercial mask shop, DA tool vendor and equipments makers. The wrap-up is as follows: Mask complexities justify the mask cost, while the acceptable increase rate of 32nm-mask cost significantly differs between mask suppliers or users side. The efficiency progress by new tools or DFM has driven their cycle-time reductions. Mask complexities and cost will be crucial issues prior to cycle time, and there seems to be linear correlation between them. Controlling complexity and cycle time requires developing a mix of advanced technologies, and especially for cost reduction, shot prices in writers and processing rates in inspection tools have been improved remarkably by tool makers. In addition, activities of consortium in Japan (Mask D2I) are expected to enhance the total optimization of mask design, writing and inspection. The cycle-time reduction potentially drives the lowering of mask cost, and, on the other, the pattern complexities and tighter mask specifications get in the way to 32nm generation as well as the nano-economics and market challenges. There are still many difficult problems in mask manufacturing now, and we are sure to go ahead to overcome a 32nm hurdle with the advances of technologies and collaborations by not only technologies but also finance.

On the Use of Lexical Stress in Reading Spanish

ERIC Educational Resources Information Center

Gutierrez-Palma, Nicolas; Palma-Reyes, Alfonso

2008-01-01

This paper investigates whether or not lexical stress is used for lexical access in Spanish. A lexical decision task and a masking priming procedure were used to compare correctly-versus-incorrectly stressed words (e.g., "tecla-TECLA vs. tecla-TECLA"). SOA (Stimulus Onset Asynchrony) was manipulated at 33, 66, 100, and 143 ms. The results showed…

Asymmetric multiple information cryptosystem based on chaotic spiral phase mask and random spectrum decomposition

NASA Astrophysics Data System (ADS)

Rafiq Abuturab, Muhammad

2018-01-01

A new asymmetric multiple information cryptosystem based on chaotic spiral phase mask (CSPM) and random spectrum decomposition is put forwarded. In the proposed system, each channel of secret color image is first modulated with a CSPM and then gyrator transformed. The gyrator spectrum is randomly divided into two complex-valued masks. The same procedure is applied to multiple secret images to get their corresponding first and second complex-valued masks. Finally, first and second masks of each channel are independently added to produce first and second complex ciphertexts, respectively. The main feature of the proposed method is the different secret images encrypted by different CSPMs using different parameters as the sensitive decryption/private keys which are completely unknown to unauthorized users. Consequently, the proposed system would be resistant to potential attacks. Moreover, the CSPMs are easier to position in the decoding process owing to their own centering mark on axis focal ring. The retrieved secret images are free from cross-talk noise effects. The decryption process can be implemented by optical experiment. Numerical simulation results demonstrate the viability and security of the proposed method.

Weighted Mean of Signal Intensity for Unbiased Fiber Tracking of Skeletal Muscles: Development of a New Method and Comparison With Other Correction Techniques.

PubMed

Giraudo, Chiara; Motyka, Stanislav; Weber, Michael; Resinger, Christoph; Thorsten, Feiweier; Traxler, Hannes; Trattnig, Siegfried; Bogner, Wolfgang

2017-08-01

The aim of this study was to investigate the origin of random image artifacts in stimulated echo acquisition mode diffusion tensor imaging (STEAM-DTI), assess the role of averaging, develop an automated artifact postprocessing correction method using weighted mean of signal intensities (WMSIs), and compare it with other correction techniques. Institutional review board approval and written informed consent were obtained. The right calf and thigh of 10 volunteers were scanned on a 3 T magnetic resonance imaging scanner using a STEAM-DTI sequence.Artifacts (ie, signal loss) in STEAM-based DTI, presumably caused by involuntary muscle contractions, were investigated in volunteers and ex vivo (ie, human cadaver calf and turkey leg using the same DTI parameters as for the volunteers). An automated postprocessing artifact correction method based on the WMSI was developed and compared with previous approaches (ie, iteratively reweighted linear least squares and informed robust estimation of tensors by outlier rejection [iRESTORE]). Diffusion tensor imaging and fiber tracking metrics, using different averages and artifact corrections, were compared for region of interest- and mask-based analyses. One-way repeated measures analysis of variance with Greenhouse-Geisser correction and Bonferroni post hoc tests were used to evaluate differences among all tested conditions. Qualitative assessment (ie, images quality) for native and corrected images was performed using the paired t test. Randomly localized and shaped artifacts affected all volunteer data sets. Artifact burden during voluntary muscle contractions increased on average from 23.1% to 77.5% but were absent ex vivo. Diffusion tensor imaging metrics (mean diffusivity, fractional anisotropy, radial diffusivity, and axial diffusivity) had a heterogeneous behavior, but in the range reported by literature. Fiber track metrics (number, length, and volume) significantly improved in both calves and thighs after artifact correction in region of interest- and mask-based analyses (P < 0.05 each). Iteratively reweighted linear least squares and iRESTORE showed equivalent results, but WMSI was faster than iRESTORE. Muscle delineation and artifact load significantly improved after correction (P < 0.05 each). Weighted mean of signal intensity correction significantly improved STEAM-based quantitative DTI analyses and fiber tracking of lower-limb muscles, providing a robust tool for musculoskeletal applications.

Future reticle demand and next-generation lithography technologies

NASA Astrophysics Data System (ADS)

Behringer, Uwe F. W.; Ehrlich, Christian; Fortange, Olaf

1999-04-01

Mask technology has often been considered an enabling for semiconductor fabrication. But today photomasks have evolved to a bottle neck in the every increasing integration process of semiconductor circuits. Regarding to the 1997 SIA roadmap there are very stringent requirements for mask making. Even with the momentary weak Asian market the worldwide demand for reticles will continue to grow. The anticipation of larger reticles has been discussed over years. What ever the reason for the need of larger reticles, the move to the 230 mm X 230 mm reticle size will provide size will provide unique challenges to both the mask equipment manufacturers and mask fabricator. Next Generation Lithography together with their mask techniques are in development and try to come into the market.

Effective EUVL mask cleaning technology solutions for mask manufacturing and in-fab mask maintenance

NASA Astrophysics Data System (ADS)

Dietze, Uwe; Dress, Peter; Waehler, Tobias; Singh, Sherjang; Jonckheere, Rik; Baudemprez, Bart

2011-03-01

Extreme Ultraviolet Lithography (EUVL) is considered the leading lithography technology choice for semiconductor devices at 16nm HP node and beyond. However, before EUV Lithography can enter into High Volume Manufacturing (HVM) of advanced semiconductor devices, the ability to guarantee mask integrity at point-of-exposure must be established. Highly efficient, damage free mask cleaning plays a critical role during the mask manufacturing cycle and throughout the life of the mask, where the absence of a pellicle to protect the EUV mask increases the risk of contamination during storage, handling and use. In this paper, we will present effective EUVL mask cleaning technology solutions for mask manufacturing and in-fab mask maintenance, which employs an intelligent, holistic approach to maximize Mean Time Between Cleans (MBTC) and extend the useful life span of the reticle. The data presented will demonstrate the protection of the capping and absorber layers, preservation of pattern integrity as well as optical and mechanical properties to avoid unpredictable CD-linewidth and overlay shifts. Experiments were performed on EUV blanks and pattern masks using various process conditions. Conditions showing high particle removal efficiency (PRE) and minimum surface layer impact were then selected for durability studies. Surface layer impact was evaluated over multiple cleaning cycles by means of UV reflectivity metrology XPS analysis and wafer prints. Experimental results were compared to computational models. Mask life time predictions where made using the same computational models. The paper will provide a generic overview of the cleaning sequence which yielded best results, but will also provide recommendations for an efficient in-fab mask maintenance scheme, addressing handling, storage, cleaning and inspection.

The neural processing of masked speech

PubMed Central

Scott, Sophie K; McGettigan, Carolyn

2014-01-01

Spoken language is rarely heard in silence, and a great deal of interest in psychoacoustics has focused on the ways that the perception of speech is affected by properties of masking noise. In this review we first briefly outline the neuroanatomy of speech perception. We then summarise the neurobiological aspects of the perception of masked speech, and investigate this as a function of masker type, masker level and task. PMID:23685149

Probing feedforward and feedback contributions to awareness with visual masking and transcranial magnetic stimulation.

PubMed

Tapia, Evelina; Beck, Diane M

2014-01-01

A number of influential theories posit that visual awareness relies not only on the initial, stimulus-driven (i.e., feedforward) sweep of activation but also on recurrent feedback activity within and between brain regions. These theories of awareness draw heavily on data from masking paradigms in which visibility of one stimulus is reduced due to the presence of another stimulus. More recently transcranial magnetic stimulation (TMS) has been used to study the temporal dynamics of visual awareness. TMS over occipital cortex affects performance on visual tasks at distinct time points and in a manner that is comparable to visual masking. We draw parallels between these two methods and examine evidence for the neural mechanisms by which visual masking and TMS suppress stimulus visibility. Specifically, both methods have been proposed to affect feedforward as well as feedback signals when applied at distinct time windows relative to stimulus onset and as a result modify visual awareness. Most recent empirical evidence, moreover, suggests that while visual masking and TMS impact stimulus visibility comparably, the processes these methods affect may not be as similar as previously thought. In addition to reviewing both masking and TMS studies that examine feedforward and feedback processes in vision, we raise questions to guide future studies and further probe the necessary conditions for visual awareness.

3D printed facial laser scans for the production of localised radiotherapy treatment masks - A case study.

PubMed

Briggs, Matthew; Clements, Helen; Wynne, Neil; Rennie, Allan; Kellett, Darren

This study investigates the use of 3D printing for patients that require localised radiotherapy treatment to the face. The current process involves producing a lead mask in order to protect the healthy tissue from the effects of the radiotherapy. The mask is produced by applying a thermoplastic sheet to the patient's face and allowing to set hard. This can then be used as a mould to create a plaster impression of the patient's face. A sheet of lead is then hammered on to the plaster to create a bespoke fitted face mask. This process can be distressing for patients and can be problematic when the patient is required to remain motionless for a prolonged time while the thermoplastic sets. In this study, a 1:1 scale 3D print of a patient's face was generated using a laser scanner. The lead was hammered directly on to the surface of the 3D print in order to create a bespoke fitted treatment mask. This eliminated the thermoplastic moulding stage and significantly reduced the time needed for the patient to be in clinic. The higher definition impression of the the face resulted in a more accurate, better fitting treatment mask.

Metal oxide multilayer hard mask system for 3D nanofabrication

NASA Astrophysics Data System (ADS)

Han, Zhongmei; Salmi, Emma; Vehkamäki, Marko; Leskelä, Markku; Ritala, Mikko

2018-02-01

We demonstrate the preparation and exploitation of multilayer metal oxide hard masks for lithography and 3D nanofabrication. Atomic layer deposition (ALD) and focused ion beam (FIB) technologies are applied for mask deposition and mask patterning, respectively. A combination of ALD and FIB was used and a patterning procedure was developed to avoid the ion beam defects commonly met when using FIB alone for microfabrication. ALD grown Al2O3/Ta2O5/Al2O3 thin film stacks were FIB milled with 30 keV gallium ions and chemically etched in 5% tetramethylammonium hydroxide at 50 °C. With metal evaporation, multilayers consisting of amorphous oxides Al2O3 and Ta2O5 can be tailored for use in 2D lift-off processing, in preparation of embedded sub-100 nm metal lines and for multilevel electrical contacts. Good pattern transfer was achieved by lift-off process from the 2D hard mask for micro- and nano-scaled fabrication. As a demonstration of the applicability of this method to 3D structures, self-supporting 3D Ta2O5 masks were made from a film stack on gold particles. Finally, thin film resistors were fabricated by utilizing controlled stiction of suspended Ta2O5 structures.

Unconscious processing of facial affect in children and adolescents.

PubMed

Killgore, William D S; Yurgelun-Todd, Deborah A

2007-01-01

In a previous study, with adults, we demonstrated that the amygdala and anterior cingulate gyrus are differentially responsive to happy and sad faces presented subliminally. Because the ability to perceive subtle facial signals communicating sadness is an important aspect of prosocial development, and is critical for empathic behavior, we examined this phenomenon from a developmental perspective using a backward masking paradigm. While undergoing functional magnetic resonance imaging (fMRI), 10 healthy adolescent children were presented with a series of happy and sad facial expressions, each lasting 20 ms and masked immediately by a neutral face to prevent conscious awareness of the affective expression. Relative to fixation baseline, masked sad faces activated the right amygdala, whereas masked happy faces failed to activate any of the regions of interest. Direct comparison between masked happy and sad faces revealed valence specific differences in the anterior cingulate gyrus. When the data were compared statistically to our previous sample of adults, the adolescent group showed significantly greater activity in the right amygdala relative to the adults during the masked sad condition. Groups also differed in several non-hypothesized regions. Development of unconscious perception from adolescence into adulthood appears to be accompanied by reduced activity within limbic affect processing systems, and perhaps increased involvement of other cortical and cerebellar systems.

Reservoir computing with a slowly modulated mask signal for preprocessing using a mutually coupled optoelectronic system

NASA Astrophysics Data System (ADS)

Tezuka, Miwa; Kanno, Kazutaka; Bunsen, Masatoshi

2016-08-01

Reservoir computing is a machine-learning paradigm based on information processing in the human brain. We numerically demonstrate reservoir computing with a slowly modulated mask signal for preprocessing by using a mutually coupled optoelectronic system. The performance of our system is quantitatively evaluated by a chaotic time series prediction task. Our system can produce comparable performance with reservoir computing with a single feedback system and a fast modulated mask signal. We showed that it is possible to slow down the modulation speed of the mask signal by using the mutually coupled system in reservoir computing.

Data-derived symbol synchronization of MASK and QASK signals. [for multilevel digital communication systems

NASA Technical Reports Server (NTRS)

Simon, M. K.

1974-01-01

Multilevel amplitude-shift-keying (MASK) and quadrature amplitude-shift-keying (QASK) as signaling techniques for multilevel digital communications systems, and the problem of providing symbol synchronization in the receivers of such systems are discussed. A technique is presented for extracting symbol sync from an MASK or QASK signal. The scheme is a generalization of the data transition tracking loop used in PSK systems. The performance of the loop was analyzed in terms of its mean-squared jitter and its effects on the data detection process in MASK and QASK systems.

Information verification and encryption based on phase retrieval with sparsity constraints and optical inference

NASA Astrophysics Data System (ADS)

Zhong, Shenlu; Li, Mengjiao; Tang, Xiajie; He, Weiqing; Wang, Xiaogang

2017-01-01

A novel optical information verification and encryption method is proposed based on inference principle and phase retrieval with sparsity constraints. In this method, a target image is encrypted into two phase-only masks (POMs), which comprise sparse phase data used for verification. Both of the two POMs need to be authenticated before being applied for decrypting. The target image can be optically reconstructed when the two authenticated POMs are Fourier transformed and convolved by the correct decryption key, which is also generated in encryption process. No holographic scheme is involved in the proposed optical verification and encryption system and there is also no problem of information disclosure in the two authenticable POMs. Numerical simulation results demonstrate the validity and good performance of this new proposed method.

64nm pitch metal1 double patterning metrology: CD and OVL control by SEMCD, image based overlay and diffraction based overlay

NASA Astrophysics Data System (ADS)

Ducoté, Julien; Dettoni, Florent; Bouyssou, Régis; Le-Gratiet, Bertrand; Carau, Damien; Dezauzier, Christophe

2015-03-01

Patterning process control of advanced nodes has required major changes over the last few years. Process control needs of critical patterning levels since 28nm technology node is extremely aggressive showing that metrology accuracy/sensitivity must be finely tuned. The introduction of pitch splitting (Litho-Etch-Litho-Etch) at 14FDSOInm node requires the development of specific metrologies to adopt advanced process control (for CD, overlay and focus corrections). The pitch splitting process leads to final line CD uniformities that are a combination of the CD uniformities of the two exposures, while the space CD uniformities are depending on both CD and OVL variability. In this paper, investigations of CD and OVL process control of 64nm minimum pitch at Metal1 level of 14FDSOI technology, within the double patterning process flow (Litho, hard mask etch, line etch) are presented. Various measurements with SEMCD tools (Hitachi), and overlay tools (KT for Image Based Overlay - IBO, and ASML for Diffraction Based Overlay - DBO) are compared. Metrology targets are embedded within a block instanced several times within the field to perform intra-field process variations characterizations. Specific SEMCD targets were designed for independent measurement of both line CD (A and B) and space CD (A to B and B to A) for each exposure within a single measurement during the DP flow. Based on those measurements correlation between overlay determined with SEMCD and with standard overlay tools can be evaluated. Such correlation at different steps through the DP flow is investigated regarding the metrology type. Process correction models are evaluated with respect to the measurement type and the intra-field sampling.

Automated registration of large deformations for adaptive radiation therapy of prostate cancer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Godley, Andrew; Ahunbay, Ergun; Peng Cheng

2009-04-15

Available deformable registration methods are often inaccurate over large organ variation encountered, for example, in the rectum and bladder. The authors developed a novel approach to accurately and effectively register large deformations in the prostate region for adaptive radiation therapy. A software tool combining a fast symmetric demons algorithm and the use of masks was developed in C++ based on ITK libraries to register CT images acquired at planning and before treatment fractions. The deformation field determined was subsequently used to deform the delivered dose to match the anatomy of the planning CT. The large deformations involved required that themore » bladder and rectum volume be masked with uniform intensities of -1000 and 1000 HU, respectively, in both the planning and treatment CTs. The tool was tested for five prostate IGRT patients. The average rectum planning to treatment contour overlap improved from 67% to 93%, the lowest initial overlap is 43%. The average bladder overlap improved from 83% to 98%, with a lowest initial overlap of 60%. Registration regions were set to include a volume receiving 4% of the maximum dose. The average region was 320x210x63, taking approximately 9 min to register on a dual 2.8 GHz Linux system. The prostate and seminal vesicles were correctly placed even though they are not masked. The accumulated doses for multiple fractions with large deformation were computed and verified. The tool developed can effectively supply the previously delivered dose for adaptive planning to correct for interfractional changes.« less

Linear dependence between the wavefront gradient and the masked intensity for the point source with a CCD sensor

NASA Astrophysics Data System (ADS)

Yang, Huizhen; Ma, Liang; Wang, Bin

2018-01-01

In contrast to the conventional adaptive optics (AO) system, the wavefront sensorless (WFSless) AO system doesn't need a WFS to measure the wavefront aberrations. It is simpler than the conventional AO in system architecture and can be applied to the complex conditions. The model-based WFSless system has a great potential in real-time correction applications because of its fast convergence. The control algorithm of the model-based WFSless system is based on an important theory result that is the linear relation between the Mean-Square Gradient (MSG) magnitude of the wavefront aberration and the second moment of the masked intensity distribution in the focal plane (also called as Masked Detector Signal-MDS). The linear dependence between MSG and MDS for the point source imaging with a CCD sensor will be discussed from theory and simulation in this paper. The theory relationship between MSG and MDS is given based on our previous work. To verify the linear relation for the point source, we set up an imaging model under atmospheric turbulence. Additionally, the value of MDS will be deviate from that of theory because of the noise of detector and further the deviation will affect the correction effect. The theory results under noise will be obtained through theoretical derivation and then the linear relation between MDS and MDS under noise will be discussed through the imaging model. Results show the linear relation between MDS and MDS under noise is also maintained well, which provides a theoretical support to applications of the model-based WFSless system.

Orthographic and Phonological Contributions to Reading Development: Tracking Developmental Trajectories Using Masked Priming

ERIC Educational Resources Information Center

Ziegler, Johannes C.; Bertrand, Daisy; Lété, Bernard; Grainger, Jonathan

2014-01-01

The present study used a variant of masked priming to track the development of 2 marker effects of orthographic and phonological processing from Grade 1 through Grade 5 in a cross-sectional study. Pseudohomophone (PsH) priming served as a marker for phonological processing, whereas transposed-letter (TL) priming was a marker for coarse-grained…

Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Ting

The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE processmore » is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device.« less

Patterned microstructures formed with MeV Au implantation in Si(1 0 0)

NASA Astrophysics Data System (ADS)

Rout, Bibhudutta; Greco, Richard R.; Zachry, Daniel P.; Dymnikov, Alexander D.; Glass, Gary A.

2006-09-01

Energetic (MeV) Au implantation in Si(1 0 0) (n-type) through masked micropatterns has been used to create layers resistant to KOH wet etching. Microscale patterns were produced in PMMA and SU(8) resist coatings on the silicon substrates using P-beam writing and developed. The silicon substrates were subsequently exposed using 1.5 MeV Au 3+ ions with fluences as high as 1 × 10 16 ions/cm 2 and additional patterns were exposed using copper scanning electron microscope calibration grids as masks on the silicon substrates. When wet etched with KOH microstructures were created in the silicon due to the resistance to KOH etching cause by the Au implantation. The process of combining the fabrication of masked patterns with P-beam writing with broad beam Au implantation through the masks can be a promising, cost-effective process for nanostructure engineering with Si.

Development of a data management front end for use with a LANDSAT based information system. [assessing gypsy moth defoliation damage in Pennsylvania

NASA Technical Reports Server (NTRS)

Turner, B. J. (Principal Investigator)

1982-01-01

A user friendly front end was constructed to facilitate access to the LANDSAT mosaic data base supplied by JPL and to process both LANDSAT and ancillary data. Archieval and retrieval techniques were developed to efficiently handle this data base and make it compatible with requirements of the Pennsylvania Bureau of Forestry. Procedures are ready for: (1) forming the forest/nonforest mask in ORSER compressed map format using GSFC-supplied classification procedures; (2) registering data from a new scene (defoliated) to the mask (which may involve mosaicking if the area encompasses two LANDSAT scenes; (3) producing a masked new data set using the MASK program; (4) analyzing this data set to produce a map showing degrees of defoliation, output on the Versatec plotter; and (5) producing color composite maps by a diazo-type process.

The temporal dynamics of masked repetition picture priming effects: manipulations of stimulus-onset asynchrony (SOA) and prime duration

PubMed Central

Eddy, Marianna D.; Holcomb, Phillip J.

2010-01-01

The current study used event-related potentials (ERPs) and masked repetition priming to examine the time-course of picture processing. We manipulated the stimulus-onset asynchrony (110 ms, 230 ms, 350 ms, 470 ms) between repeated and unrepeated prime-target pairs while holding the prime duration constant (50 ms) (Experiment 1) as well as the prime duration (30 ms, 50 ms, 70 ms, 90 ms) (Experiment 2) with a constant SOA of 110 ms in a masked repetition priming paradigm with pictures. The aim of this study was to further elucidate the mechanisms underlying previously observed ERP components in masked priming with pictures. We found both the N/P190 and N400 are modulated by changes in prime duration and SOA, however, it appears that longer prime exposure rather than a longer SOA leads to more in-depth processing as indexed by larger N400 effects. PMID:20403342

Assisted suicide by oxygen deprivation with helium at a Swiss right-to-die organisation.

PubMed

Ogden, Russel D; Hamilton, William K; Whitcher, Charles

2010-03-01

In Switzerland, right-to-die organisations assist their members with suicide by lethal drugs, usually barbiturates. One organisation, Dignitas, has experimented with oxygen deprivation as an alternative to sodium pentobarbital. To analyse the process of assisted suicide by oxygen deprivation with helium and a common face mask and reservoir bag. This study examined four cases of assisted suicide by oxygen deprivation using helium delivered via a face mask. Videos of the deaths were provided by the Zurich police. Dignitas provided protocol and consent information. One man and three women were assisted to death by oxygen deprivation. There was wide variation in the time to unconsciousness and the time to death, probably due to the poor mask fit. Swiss law prevented attendants from effectively managing the face mask apparatus. Purposeless movements of the extremities were disconcerting for Dignitas attendants, who are accustomed to assisting suicide with barbiturates. None of the dying individuals attempted self-rescue. The dying process of oxygen deprivation with helium is potentially quick and appears painless. It also bypasses the prescribing role of physicians, effectively demedicalising assisted suicide. Oxygen deprivation with a face mask is not acceptable because leaks are difficult to control and it may not eliminate rebreathing. These factors will extend time to unconsciousness and time to death. A hood method could reduce the problem of mask fit. With a hood, a flow rate of helium sufficient to provide continuous washout of expired gases would remedy problems observed with the mask.

Affect of the unconscious: Visually suppressed angry faces modulate our decisions

PubMed Central

Pajtas, Petra E.; Mahon, Bradford Z.; Nakayama, Ken; Caramazza, Alfonso

2016-01-01

Emotional and affective processing imposes itself over cognitive processes and modulates our perception of the surrounding environment. In two experiments, we addressed the issue of whether nonconscious processing of affect can take place even under deep states of unawareness, such as those induced by interocular suppression techniques, and can elicit an affective response that can influence our understanding of the surrounding environment. In Experiment 1, participants judged the likeability of an unfamiliar item—a Chinese character—that was preceded by a face expressing a particular emotion (either happy or angry). The face was rendered invisible through an interocular suppression technique (continuous flash suppression; CFS). In Experiment 2, backward masking (BM), a less robust masking technique, was used to render the facial expressions invisible. We found that despite equivalent phenomenological suppression of the visual primes under CFS and BM, different patterns of affective processing were obtained with the two masking techniques. Under BM, nonconscious affective priming was obtained for both happy and angry invisible facial expressions. However, under CFS, nonconscious affective priming was obtained only for angry facial expressions. We discuss an interpretation of this dissociation between affective processing and visual masking techniques in terms of distinct routes from the retina to the amygdala. PMID:23224765

Low cost solar array project. Cell and module formation research area. Process research of non-CZ silicon material

NASA Technical Reports Server (NTRS)

1983-01-01

Liquid diffusion masks and liquid dopants to replace the more expensive CVD SiO2 mask and gaseous diffusion processes were investigated. Silicon pellets were prepared in the silicon shot tower; and solar cells were fabricated using web grown where the pellets were used as a replenishment material. Verification runs were made using the boron dopant and liquid diffusion mask materials. The average of cells produced in these runs was 13%. The relationship of sheet resistivity, temperature, gas flows, and gas composition for the diffusion of the P-8 liquid phosphorus solution was investigated. Solar cells processed from web grown from Si shot material were evaluated, and results qualified the use of the material produced in the shot tower for web furnace feed stock.

Scatter Correction with Combined Single-Scatter Simulation and Monte Carlo Simulation Scaling Improved the Visual Artifacts and Quantification in 3-Dimensional Brain PET/CT Imaging with 15O-Gas Inhalation.

PubMed

Magota, Keiichi; Shiga, Tohru; Asano, Yukari; Shinyama, Daiki; Ye, Jinghan; Perkins, Amy E; Maniawski, Piotr J; Toyonaga, Takuya; Kobayashi, Kentaro; Hirata, Kenji; Katoh, Chietsugu; Hattori, Naoya; Tamaki, Nagara

2017-12-01

In 3-dimensional PET/CT imaging of the brain with 15 O-gas inhalation, high radioactivity in the face mask creates cold artifacts and affects the quantitative accuracy when scatter is corrected by conventional methods (e.g., single-scatter simulation [SSS] with tail-fitting scaling [TFS-SSS]). Here we examined the validity of a newly developed scatter-correction method that combines SSS with a scaling factor calculated by Monte Carlo simulation (MCS-SSS). Methods: We performed phantom experiments and patient studies. In the phantom experiments, a plastic bottle simulating a face mask was attached to a cylindric phantom simulating the brain. The cylindric phantom was filled with 18 F-FDG solution (3.8-7.0 kBq/mL). The bottle was filled with nonradioactive air or various levels of 18 F-FDG (0-170 kBq/mL). Images were corrected either by TFS-SSS or MCS-SSS using the CT data of the bottle filled with nonradioactive air. We compared the image activity concentration in the cylindric phantom with the true activity concentration. We also performed 15 O-gas brain PET based on the steady-state method on patients with cerebrovascular disease to obtain quantitative images of cerebral blood flow and oxygen metabolism. Results: In the phantom experiments, a cold artifact was observed immediately next to the bottle on TFS-SSS images, where the image activity concentrations in the cylindric phantom were underestimated by 18%, 36%, and 70% at the bottle radioactivity levels of 2.4, 5.1, and 9.7 kBq/mL, respectively. At higher bottle radioactivity, the image activity concentrations in the cylindric phantom were greater than 98% underestimated. For the MCS-SSS, in contrast, the error was within 5% at each bottle radioactivity level, although the image generated slight high-activity artifacts around the bottle when the bottle contained significantly high radioactivity. In the patient imaging with 15 O 2 and C 15 O 2 inhalation, cold artifacts were observed on TFS-SSS images, whereas no artifacts were observed on any of the MCS-SSS images. Conclusion: MCS-SSS accurately corrected the scatters in 15 O-gas brain PET when the 3-dimensional acquisition mode was used, preventing the generation of cold artifacts, which were observed immediately next to a face mask on TFS-SSS images. The MCS-SSS method will contribute to accurate quantitative assessments. © 2017 by the Society of Nuclear Medicine and Molecular Imaging.

ISCE: A Modular, Reusable Library for Scalable SAR/InSAR Processing

NASA Astrophysics Data System (ADS)

Agram, P. S.; Lavalle, M.; Gurrola, E. M.; Sacco, G. F.; Rosen, P. A.

2016-12-01

Traditional community SAR/InSAR processing software tools have primarily focused on differential interferometry and Solid Earth applications. The InSAR Scientific Computing Environment (ISCE) was specifically designed to support the Earth Sciences user community as well as large scale operational processing tasks, thanks to its two-layered (Python+C/Fortran) architecture and modular framework. ISCE is freely distributed as a source tarball, allowing advanced users to modify and extend it for their research purposes and developing exploratory applications, while providing a relatively simple user interface for novice users to perform routine data analysis efficiently. Modular design of the ISCE library also enables easier development of applications to address the needs of Ecosystems, Cryosphere and Disaster Response communities in addition to the traditional Solid Earth applications. In this talk, we would like to emphasize the broader purview of the ISCE library and some of its unique features that sets it apart from other freely available community software like GMTSAR and DORIS, including: Support for multiple geometry regimes - Native Doppler (ALOS-1) as well Zero Doppler (ESA missions) systems. Support for data acquired by airborne platforms - e.g, JPL's UAVSAR and AirMOSS, DLR's F-SAR. Radiometric Terrain Correction - Auxiliary output layers from the geometry modules include projection angles, incidence angles, shadow-layover masks. Dense pixel offsets - Parallelized amplitude cross correlation for cryosphere / ionospheric correction applications. Rubber sheeting - Pixel-by-pixel offsets fields for resampling slave imagery for geometric co-registration/ ionospheric corrections. Preliminary Tandem-X processing support - Bistatic geometry modules. Extensibility to support other non-Solid Earth missions - Modules can be directly adopted for use with other SAR missions, e.g., SWOT. Preliminary support for multi-dimensional data products- multi-polarization, multi-frequency, multi-temporal, multi-baseline stacks via the PLANT and GIAnT toolboxes. Rapid prototyping - Geometry manipulation functionality at the python level allows users to prototype and test processing modules at the interpreter level before optimal implementation in C/C++/Fortran.

MACCS : Multi-Mission Atmospheric Correction and Cloud Screening tool for high-frequency revisit data processing

NASA Astrophysics Data System (ADS)

Petrucci, B.; Huc, M.; Feuvrier, T.; Ruffel, C.; Hagolle, O.; Lonjou, V.; Desjardins, C.

2015-10-01

For the production of Level2A products during Sentinel-2 commissioning in the Technical Expertise Center Sentinel-2 in CNES, CESBIO proposed to adapt the Venus Level-2 , taking advantage of the similarities between the two missions: image acquisition at a high frequency (2 days for Venus, 5 days with the two Sentinel-2), high resolution (5m for Venus, 10, 20 and 60m for Sentinel-2), images acquisition under constant viewing conditions. The Multi-Mission Atmospheric Correction and Cloud Screening (MACCS) tool was born: based on CNES Orfeo Toolbox Library, Venμs processor which was already able to process Formosat2 and VENμS data, was adapted to process Sentinel-2 and Landsat5-7 data; since then, a great effort has been made reviewing MACCS software architecture in order to ease the add-on of new missions that have also the peculiarity of acquiring images at high resolution, high revisit and under constant viewing angles, such as Spot4/Take5 and Landsat8. The recursive and multi-temporal algorithm is implemented in a core that is the same for all the sensors and that combines several processing steps: estimation of cloud cover, cloud shadow, water, snow and shadows masks, of water vapor content, aerosol optical thickness, atmospheric correction. This core is accessed via a number of plug-ins where the specificity of the sensor and of the user project are taken into account: products format, algorithmic processing chaining and parameters. After a presentation of MACCS architecture and functionalities, the paper will give an overview of the production facilities integrating MACCS and the associated specificities: the interest for this tool has grown worldwide and MACCS will be used for extensive production within the THEIA land data center and Agri-S2 project. Finally the paper will zoom on the use of MACCS during Sentinel-2 In Orbit Test phase showing the first Level-2A products.

Maxillary advancement using distraction osteogenesis with intraoral device.

PubMed

Takigawa, Yoko; Uematsu, Setsuko; Takada, Kenji

2010-11-01

This article describes the surgical orthodontic treatment of maxillary hypoplasia in a patient with cleft lip and palate using maxillary distraction osteogenesis with internal maxillary distractors. Maxillary advancement was performed to correct the retrusive maxillary facial profile and Class III malocclusion. Rotational movement of the distraction segment was made to correct the upper dental midline. Although maxillary advancement was insufficient because of unexpected breakage of the intraoral distractor after completion of the distraction, skeletal traction with a face mask compensated for the shortage. Successful esthetic improvement and posttreatment occlusal stability were achieved with no discernible relapse after 2 years of retention.

Three-dimensional printing for restoration of the donor face: A new digital technique tested and used in the first facial allotransplantation patient in Finland.

PubMed

Mäkitie, A A; Salmi, M; Lindford, A; Tuomi, J; Lassus, P

2016-12-01

Prosthetic mask restoration of the donor face is essential in current facial transplant protocols. The aim was to develop a new three-dimensional (3D) printing (additive manufacturing; AM) process for the production of a donor face mask that fulfilled the requirements for facial restoration after facial harvest. A digital image of a single test person's face was obtained in a standardized setting and subjected to three different image processing techniques. These data were used for the 3D modeling and printing of a donor face mask. The process was also tested in a cadaver setting and ultimately used clinically in a donor patient after facial allograft harvest. and Conclusions: All the three developed and tested techniques enabled the 3D printing of a custom-made face mask in a timely manner that is almost an exact replica of the donor patient's face. This technique was successfully used in a facial allotransplantation donor patient. Copyright © 2016 British Association of Plastic, Reconstructive and Aesthetic Surgeons. Published by Elsevier Ltd. All rights reserved.

Visual masking and the dynamics of human perception, cognition, and consciousness A century of progress, a contemporary synthesis, and future directions.

PubMed

Ansorge, Ulrich; Francis, Gregory; Herzog, Michael H; Oğmen, Haluk

2008-07-15

The 1990s, the "decade of the brain," witnessed major advances in the study of visual perception, cognition, and consciousness. Impressive techniques in neurophysiology, neuroanatomy, neuropsychology, electrophysiology, psychophysics and brain-imaging were developed to address how the nervous system transforms and represents visual inputs. Many of these advances have dealt with the steady-state properties of processing. To complement this "steady-state approach," more recent research emphasized the importance of dynamic aspects of visual processing. Visual masking has been a paradigm of choice for more than a century when it comes to the study of dynamic vision. A recent workshop (http://lpsy.epfl.ch/VMworkshop/), held in Delmenhorst, Germany, brought together an international group of researchers to present state-of-the-art research on dynamic visual processing with a focus on visual masking. This special issue presents peer-reviewed contributions by the workshop participants and provides a contemporary synthesis of how visual masking can inform the dynamics of human perception, cognition, and consciousness.

Visual masking and the dynamics of human perception, cognition, and consciousness A century of progress, a contemporary synthesis, and future directions

PubMed Central

Ansorge, Ulrich; Francis, Gregory; Herzog, Michael H.; Öğmen, Haluk

2008-01-01

The 1990s, the “decade of the brain,” witnessed major advances in the study of visual perception, cognition, and consciousness. Impressive techniques in neurophysiology, neuroanatomy, neuropsychology, electrophysiology, psychophysics and brain-imaging were developed to address how the nervous system transforms and represents visual inputs. Many of these advances have dealt with the steady-state properties of processing. To complement this “steady-state approach,” more recent research emphasized the importance of dynamic aspects of visual processing. Visual masking has been a paradigm of choice for more than a century when it comes to the study of dynamic vision. A recent workshop (http://lpsy.epfl.ch/VMworkshop/), held in Delmenhorst, Germany, brought together an international group of researchers to present state-of-the-art research on dynamic visual processing with a focus on visual masking. This special issue presents peer-reviewed contributions by the workshop participants and provides a contemporary synthesis of how visual masking can inform the dynamics of human perception, cognition, and consciousness. PMID:20517493

Progress on EUV mask fabrication for 32-nm technology node and beyond

NASA Astrophysics Data System (ADS)

Zhang, Guojing; Yan, Pei-Yang; Liang, Ted; Park, Seh-jin; Sanchez, Peter; Shu, Emily Y.; Ultanir, Erdem A.; Henrichs, Sven; Stivers, Alan; Vandentop, Gilroy; Lieberman, Barry; Qu, Ping

2007-05-01

Extreme ultraviolet lithography (EUVL) tool development achieved a big milestone last year as two full-field Alpha Demo Tools (ADT) were shipped to customers by ASML. In the future horizon, a full field "EUV1" exposure tool from Nikon will be available by the end of 20071 and the pre-production EUV exposure tools from ASML are targeted for 20092. It is essential that high quality EUVL masks can be made and delivered to the EUVL tool users to support the technology development. In the past year, we have demonstrated mask fabrication with low stress absorber deposition and good etch process control yielding a vertical etch profile and a mask CD control of 5.7 nm for 32 nm (1x) space and 7.4 nm for 32 nm (1x) lines. Mask pattern resolution of 15 nm (1x) dense lines was achieved. Full field reflective mask die-to-die inspection at a 125nm pixel size was demonstrated after low defect multilayer blanks became available. In this paper, we will present details of the Intel EUVL Mask Pilot Line progress in EUVL mask defect reduction, pattern CD performance, program defect mask design and inspection, in-house absorber film development and its performance, and EUVL metrology tool development. We will demonstrate an overall improvement in EUV mask manufacturing readiness due to our Pilot Line activities.

AutoMOPS- B2B and B2C in mask making: Mask manufacturing performance and customer satisfaction improvement through better information flow management using generic models and standardized languages

NASA Astrophysics Data System (ADS)

Filies, Olaf; de Ridder, Luc; Rodriguez, Ben; Kujiken, Aart

2002-03-01

Semiconductor manufacturing has become a global business, in which companies of different size unite in virtual enterprises to meet new opportunities. Therefore Mask manufacturing is a key business, but mask ordering is a complex process and is always critical regarding design to market time, even though mask complexity and customer base are increasing using a wide variety of different mask order forms which are frequently faulty and very seldom complete. This is effectively blocking agile manufacturing and can tie wafer fabs to a single mask The goal of the project is elimination of the order verification through paperless, electronically linked information sharing/exchange between chip design, mask production and production stages, which will allow automation of the mask preparation. To cover these new techniques and their specifications as well as the common ones with automated tools a special generic Meta-model will be generated, based on the current standards for mask specifications, including the requirements from the involved partners (Alcatel Microelectronics, Altis, Compugraphics, Infineon, Nimble, Sigma-C), the project works out a pre-normative standard. The paper presents the current status of work. This work is partly funded by the Commission of the European Union under the Fifth Framework project IST-1999-10332 AutoMOPS.

Spatial Attention Enhances Perceptual Processing of Single-Element Displays

NASA Technical Reports Server (NTRS)

Bacon, William; Johnston, James C.; Remington, Roger W.; Null, Cynthia H. (Technical Monitor)

1994-01-01

Shiu and Pashler (1993) reported that precueing masked, single-element displays had negligible effects on identification accuracy. They argued that spatial attention does not actually enhance stimulus perceptibility, but only reduces decision noise. Alternatively, such negative results may arise if cues are sub-optimal, or if masks place an insufficient premium on timely deployment of attention. We report results showing that valid cueing enhances processing of even single-element displays. Spatial attention does indeed enhance perceptual processes.

A methodology for cloud masking uncalibrated lidar signals

NASA Astrophysics Data System (ADS)

Binietoglou, Ioannis; D'Amico, Giuseppe; Baars, Holger; Belegante, Livio; Marinou, Eleni

2018-04-01

Most lidar processing algorithms, such as those included in EARLINET's Single Calculus Chain, can be applied only to cloud-free atmospheric scenes. In this paper, we present a methodology for masking clouds in uncalibrated lidar signals. First, we construct a reference dataset based on manual inspection and then train a classifier to separate clouds and cloud-free regions. Here we present details of this approach together with an example cloud masks from an EARLINET station.

Disposable surgical face masks for preventing surgical wound infection in clean surgery.

PubMed

Lipp, Allyson; Edwards, Peggy

2014-02-17

Surgical face masks were originally developed to contain and filter droplets containing microorganisms expelled from the mouth and nasopharynx of healthcare workers during surgery, thereby providing protection for the patient. However, there are several ways in which surgical face masks could potentially contribute to contamination of the surgical wound, e.g. by incorrect wear or by leaking air from the side of the mask due to poor string tension. To determine whether disposable surgical face masks worn by the surgical team during clean surgery prevent postoperative surgical wound infection. We searched The Cochrane Wounds Group Specialised Register on 23 October 2013; The Cochrane Central Register of Controlled Trials (CENTRAL) (The Cochrane Library); Ovid MEDLINE; Ovid MEDLINE (In-Process & Other Non-Indexed Citations); Ovid EMBASE; and EBSCO CINAHL. Randomised controlled trials (RCTs) and quasi-randomised controlled trials comparing the use of disposable surgical masks with the use of no mask. Two review authors extracted data independently. Three trials were included, involving a total of 2113 participants. There was no statistically significant difference in infection rates between the masked and unmasked group in any of the trials. From the limited results it is unclear whether the wearing of surgical face masks by members of the surgical team has any impact on surgical wound infection rates for patients undergoing clean surgery.

Mask industry assessment trend analysis

NASA Astrophysics Data System (ADS)

Hughes, Greg; Yun, Henry

2009-01-01

Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH to gather information about the mask industry as an objective assessment of its overall condition. This year's survey data were presented in detail at BACUS and the detailed trend analysis presented at EMLC. The survey is designed with the input of semiconductor company mask technologists and merchant mask suppliers. This year's assessment is the seventh in the current series of annual reports. With continued industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments on critical path issues. This year's survey is basically the same as the surveys in 2005 through 2007. Questions are grouped into seven categories: General Business Profile Information, Data Processing, Yields and Yield Loss, Mechanisms, Delivery Times, Returns, and Services. (Examples are given below). Within each category is a multitude of questions that creates a detailed profile of both the business and technical status of the critical mask industry.

Mask industry assessment: 2009

NASA Astrophysics Data System (ADS)

Hughes, Greg; Yun, Henry

2009-10-01

Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH and administered by David Powell Consulting to gather information about the mask industry as an objective assessment of its overall condition. The survey is designed with the input of semiconductor company mask technologists and merchant mask suppliers. This year's assessment is the eighth in the current series of annual reports. With ongoing industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey is basically the same as the 2005 through 2008 surveys. Questions are grouped into categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that create a detailed profile of both the business and technical status of the critical mask industry. This in combination with the past surveys represents a comprehensive view of changes in the industry.

Development of an Operational Land Water Mask for MODIS Collection 6, and Influence on Downstream Data Products

NASA Technical Reports Server (NTRS)

Carroll, M. L.; DiMiceli, C. M.; Townshend, J. R. G.; Sohlberg, R. A.; Elders, A. I.; Devadiga, S.; Sayer, A. M.; Levy, R. C.

2016-01-01

Data from the Moderate Resolution Imaging Spectro-radiometer (MODIS)on-board the Earth Observing System Terra and Aqua satellites are processed using a land water mask to determine when an algorithm no longer needs to be run or when an algorithm needs to follow a different pathway. Entering the fourth reprocessing (Collection 6 (C6)) the MODIS team replaced the 1 km water mask with a 500 m water mask for improved representation of the continental surfaces. The new water mask represents more small water bodies for an overall increase in water surface from 1 to 2 of the continental surface. While this is still a small fraction of the overall global surface area the increase is more dramatic in certain areas such as the Arctic and Boreal regions where there are dramatic increases in water surface area in the new mask. MODIS products generated by the on-going C6 reprocessing using the new land water mask show significant impact in areas with high concentrations of change in the land water mask. Here differences between the Collection 5 (C5) and C6 water masks and the impact of these differences on the MOD04 aerosol product and the MOD11 land surface temperature product are shown.

Process variation challenges and resolution in the negative-tone develop double patterning for 20nm and below technology node

NASA Astrophysics Data System (ADS)

Mehta, Sohan S.; Ganta, Lakshmi K.; Chauhan, Vikrant; Wu, Yixu; Singh, Sunil; Ann, Chia; Subramany, Lokesh; Higgins, Craig; Erenturk, Burcin; Srivastava, Ravi; Singh, Paramjit; Koh, Hui Peng; Cho, David

2015-03-01

Immersion based 20nm technology node and below becoming very challenging to chip designers, process and integration due to multiple patterning to integrate one design layer . Negative tone development (NTD) processes have been well accepted by industry experts for enabling technologies 20 nm and below. 193i double patterning is the technology solution for pitch down to 80 nm. This imposes tight control in critical dimension(CD) variation in double patterning where design patterns are decomposed in two different masks such as in litho-etch-litho etch (LELE). CD bimodality has been widely studied in LELE double patterning. A portion of CD tolerance budget is significantly consumed by variations in CD in double patterning. The objective of this work is to study the process variation challenges and resolution in the Negative Tone Develop Process for 20 nm and Below Technology Node. This paper describes the effect of dose slope on CD variation in negative tone develop LELE process. This effect becomes even more challenging with standalone NTD developer process due to q-time driven CD variation. We studied impact of different stacks with combination of binary and attenuated phase shift mask and estimated dose slope contribution individually from stack and mask type. Mask 3D simulation was carried out to understand theoretical aspect. In order to meet the minimum insulator requirement for the worst case on wafer the overlay and critical dimension uniformity (CDU) budget margins have slimmed. Besides the litho process and tool control using enhanced metrology feedback, the variation control has other dependencies too. Color balancing between the two masks in LELE is helpful in countering effects such as iso-dense bias, and pattern shifting. Dummy insertion and the improved decomposition techniques [2] using multiple lower priority constraints can help to a great extent. Innovative color aware routing techniques [3] can also help with achieving more uniform density and color balanced layouts.

Improving overly manufacturing metrics through application of feedforward mask-bias

NASA Astrophysics Data System (ADS)

Joubert, Etienne; Pellegrini, Joseph C.; Misra, Manish; Sturtevant, John L.; Bernhard, John M.; Ong, Phu; Crawshaw, Nathan K.; Puchalski, Vern

2003-06-01

Traditional run-to-run controllers that rely on highly correlated historical events to forecast process corrections have been shown to provide substantial benefit over manual control in the case of a fab that is primarily manufacturing high volume, frequent running parts (i.e., DRAM, MPU, and similar operations). However, a limitation of the traditional controller emerges when it is applied to a fab whose work in process (WIP) is composed of primarily short-running, high part count products (typical of foundries and ASIC fabs). This limitation exists because there is a strong likelihood that each reticle has a unique set of process corrections different from other reticles at the same process layer. Further limitations exist when it is realized that each reticle is loaded and aligned differently on multiple exposure tools.A structural change in how the run-to-run controller manages the frequent reticle changes associated with the high part count environment has allowed for breakthrough performance to be achieved. This breakthrough was mad possible by the realization that; 1. Reticle sourced errors were highly stable over long periods of time, thus allowing them to be deconvolved from the day to day tool and process drifts. 2. Reticle sourced errors can be modeled as a feedforward disturbance rather than as discriminates in defining and dividing process streams. In this paper, we show how to deconvolve the static (reticle) and dynamic (day to day tool and process) components from the overall error vector to better forecast feedback for existing products as well as how to compute or learn these values for new product introductions - or new tool startups. Manufacturing data will presented to support this discussion with some real world success stories.

Single-Run Single-Mask Inductively-Coupled-Plasma Reactive-Ion-Etching Process for Fabricating Suspended High-Aspect-Ratio Microstructures

NASA Astrophysics Data System (ADS)

Yang, Yao-Joe; Kuo, Wen-Cheng; Fan, Kuang-Chao

2006-01-01

In this work, we present a single-run single-mask (SRM) process for fabricating suspended high-aspect-ratio structures on standard silicon wafers using an inductively coupled plasma-reactive ion etching (ICP-RIE) etcher. This process eliminates extra fabrication steps which are required for structure release after trench etching. Released microstructures with 120 μm thickness are obtained by this process. The corresponding maximum aspect ratio of the trench is 28. The SRM process is an extended version of the standard process proposed by BOSCH GmbH (BOSCH process). The first step of the SRM process is a standard BOSCH process for trench etching, then a polymer layer is deposited on trench sidewalls as a protective layer for the subsequent structure-releasing step. The structure is released by dry isotropic etching after the polymer layer on the trench floor is removed. All the steps can be integrated into a single-run ICP process. Also, only one mask is required. Therefore, the process complexity and fabrication cost can be effectively reduced. Discussions on each SRM step and considerations for avoiding undesired etching of the silicon structures during the release process are also presented.

Registration performance on EUV masks using high-resolution registration metrology

NASA Astrophysics Data System (ADS)

Steinert, Steffen; Solowan, Hans-Michael; Park, Jinback; Han, Hakseung; Beyer, Dirk; Scherübl, Thomas

2016-10-01

Next-generation lithography based on EUV continues to move forward to high-volume manufacturing. Given the technical challenges and the throughput concerns a hybrid approach with 193 nm immersion lithography is expected, at least in the initial state. Due to the increasing complexity at smaller nodes a multitude of different masks, both DUV (193 nm) and EUV (13.5 nm) reticles, will then be required in the lithography process-flow. The individual registration of each mask and the resulting overlay error are of crucial importance in order to ensure proper functionality of the chips. While registration and overlay metrology on DUV masks has been the standard for decades, this has yet to be demonstrated on EUV masks. Past generations of mask registration tools were not necessarily limited in their tool stability, but in their resolution capabilities. The scope of this work is an image placement investigation of high-end EUV masks together with a registration and resolution performance qualification. For this we employ a new generation registration metrology system embedded in a production environment for full-spec EUV masks. This paper presents excellent registration performance not only on standard overlay markers but also on more sophisticated e-beam calibration patterns.

Photomask quality evaluation using lithography simulation and multi-detector MVM-SEM

NASA Astrophysics Data System (ADS)

Ito, Keisuke; Murakawa, Tsutomu; Fukuda, Naoki; Shida, Soichi; Iwai, Toshimichi; Matsumoto, Jun; Nakamura, Takayuki; Matsushita, Shohei; Hagiwara, Kazuyuki; Hara, Daisuke

2013-06-01

The detection and management of mask defects which are transferred onto wafer becomes more important day by day. As the photomask patterns becomes smaller and more complicated, using Inverse Lithography Technology (ILT) and Source Mask Optimization (SMO) with Optical Proximity Correction (OPC). To evaluate photomask quality, the current method uses aerial imaging by optical inspection tools. This technique at 1Xnm node has a resolution limit because small defects will be difficult to detect. We already reported the MEEF influence of high-end photomask using wide FOV SEM contour data of "E3630 MVM-SEM®" and lithography simulator "TrueMask® DS" of D2S Inc. in the prior paper [1]. In this paper we evaluate the correlation between our evaluation method and optical inspection tools as ongoing assessment. Also in order to reduce the defect classification work, we can compose the 3 Dimensional (3D) information of defects and can judge whether repairs of defects would be required. Moreover, we confirm the possibility of wafer plane CD measurement based on the combination between E3630 MVM-SEM® and 3D lithography simulation.

Characterising a holographic modal phase mask for the detection of ocular aberrations

NASA Astrophysics Data System (ADS)

Corbett, A. D.; Leyva, D. Gil; Diaz-Santana, L.; Wilkinson, T. D.; Zhong, J. J.

2005-12-01

The accurate measurement of the double-pass ocular wave front has been shown to have a broad range of applications from LASIK surgery to adaptively corrected retinal imaging. The ocular wave front can be accurately described by a small number of Zernike circle polynomials. The modal wave front sensor was first proposed by Neil et al. and allows the coefficients of the individual Zernike modes to be measured directly. Typically the aberrations measured with the modal sensor are smaller than those seen in the ocular wave front. In this work, we investigated a technique for adapting a modal phase mask for the sensing of the ocular wave front. This involved extending the dynamic range of the sensor by increasing the pinhole size to 2.4mm and optimising the mask bias to 0.75λ. This was found to decrease the RMS error by up to a factor of three for eye-like aberrations with amplitudes up to 0.2μm. For aberrations taken from a sample of real-eye measurements a 20% decrease in the RMS error was observed.

Vortex via process: analysis and mask fabrication for contact CDs <80 nm

NASA Astrophysics Data System (ADS)

Levenson, Marc D.; Tan, Sze M.; Dai, Grace; Morikawa, Yasutaka; Hayashi, Naoya; Ebihara, Takeaki

2003-06-01

In an optical vortex, the wavefront spirals like a corkscrew, rather than forming planes or spheres. Since any nonzero optical amplitude must have a well-defined phase, the axis of a vortex is always dark. Printed in negative resist at 248nm and NA=0.63, 250nm pitch vortex arrays would produce contact holes with 80nm0.6 can be patterned using a chromeless phase-edge mask composed of rectangles with nominal phases of 0°, 90°, 180° and 270°. Analytic and numerical calculations have been performed to characterize the aerial images projected from such vortex masks using the Kirchhoff-approximation and rigorous EMF methods. Combined with resist simulations, these analyses predict process windows with ~10%Elat and >200nm DOF for 80nm CDs on pitches greater than or equal to 250nm at σ greater than or equal to 0.15. Smaller CDs and pitches are possible with shorter wavelength and larger NA while larger pitches give rise to larger CDs. At pitch >0.8μm, the vortices begin to print independently for σ greater than or equal to 0.3. Such "independent" vortices have a quasi-isofocal dose that gives rise to 100nm contacts with Elat>9% and DOF>500nm at σ=0.3. The extra darkness of the nominal 270° phase step can be accommodated by fine-tuning the etch depth. A reticle fabrication process that achieves the required alignment and vertical wall profiles has been exercised and test masks analyzed. In an actual chip design, unwanted vortices and phase step images would be erased from the resist pattern by exposing the wafer with a second, more conventional trim mask. Vortex via placement is consistent with the coarse-gridded grating design paradigms which would - if widely exercised - lower the cost of the required reticles. Compared to other ways of producing deep sub-wavelength contacts, the vortex via process requires fewer masks and reduces the overlay and process control challenges. A high resolution negative-working resist process is essential, however.

Effects of masker frequency and duration in forward masking: further evidence for the influence of peripheral nonlinearity.

PubMed

Oxenham, A J; Plack, C J

2000-12-01

Forward masking has often been thought of in terms of neural adaptation, with nonlinearities in the growth and decay of forward masking being accounted for by the nonlinearities inherent in adaptation. In contrast, this study presents further evidence for the hypothesis that forward masking can be described as a linear process, once peripheral, mechanical nonlinearities are taken into account. The first experiment compares the growth of masking for on- and off-frequency maskers. Signal thresholds were measured as a function of masker level for three masker-signal intervals of 0, 10, and 30 ms. The brief 4-kHz sinusoidal signal was masked by a 200-ms sinusoidal forward masker which had a frequency of either 2.4 kHz (off-frequency) or 4 kHz (on-frequency). As in previous studies, for the on-frequency condition, the slope of the function relating signal threshold to masker level became shallower as the delay between the masker and signal was increased. In contrast, the slopes for the off-frequency condition were independent of masker-signal delay and had a value of around unity, indicating linear growth of masking for all masker-signal delays. In the second experiment, a broadband Gaussian noise forward masker was used to mask a brief 6-kHz sinusoidal signal. The spectrum level of the masker was either 0 or 40 dB (re: 20 microPa). The gap between the masker and signal was either 0 or 20 ms. Signal thresholds were measured for masker durations from 5 to 200 ms. The effect of masker duration was found to depend more on signal level than on gap duration or masker level. Overall, the results support the idea that forward masking can be modeled as a linear process, preceded by a static nonlinearity resembling that found on the basilar membrane.

Masking technique for coating thickness control on large and strongly curved aspherical optics.

PubMed

Sassolas, B; Flaminio, R; Franc, J; Michel, C; Montorio, J-L; Morgado, N; Pinard, L

2009-07-01

We discuss a method to control the coating thickness deposited onto large and strongly curved optics by ion beam sputtering. The technique uses an original design of the mask used to screen part of the sputtered materials. A first multielement mask is calculated from the measured two-dimensional coating thickness distribution. Then, by means of an iterative process, the final mask is designed. By using such a technique, it has been possible to deposit layers of tantalum pentoxide having a high thickness gradient onto a curved substrate 500 mm in diameter. Residual errors in the coating thickness profile are below 0.7%.

Mapping Snow Grain Size over Greenland from MODIS

NASA Technical Reports Server (NTRS)

Lyapustin, Alexei; Tedesco, Marco; Wang, Yujie; Kokhanovsky, Alexander

2008-01-01

This paper presents a new automatic algorithm to derive optical snow grain size (SGS) at 1 km resolution using Moderate Resolution Imaging Spectroradiometer (MODIS) measurements. Differently from previous approaches, snow grains are not assumed to be spherical but a fractal approach is used to account for their irregular shape. The retrieval is conceptually based on an analytical asymptotic radiative transfer model which predicts spectral bidirectional snow reflectance as a function of the grain size and ice absorption. The analytical form of solution leads to an explicit and fast retrieval algorithm. The time series analysis of derived SGS shows a good sensitivity to snow metamorphism, including melting and snow precipitation events. Preprocessing is performed by a Multi-Angle Implementation of Atmospheric Correction (MAIAC) algorithm, which includes gridding MODIS data to 1 km resolution, water vapor retrieval, cloud masking and an atmospheric correction. MAIAC cloud mask (CM) is a new algorithm based on a time series of gridded MODIS measurements and an image-based rather than pixel-based processing. Extensive processing of MODIS TERRA data over Greenland shows a robust performance of CM algorithm in discrimination of clouds over bright snow and ice. As part of the validation analysis, SGS derived from MODIS over selected sites in 2004 was compared to the microwave brightness temperature measurements of SSM\\I radiometer, which is sensitive to the amount of liquid water in the snowpack. The comparison showed a good qualitative agreement, with both datasets detecting two main periods of snowmelt. Additionally, MODIS SGS was compared with predictions of the snow model CROCUS driven by measurements of the automatic whether stations of the Greenland Climate Network. We found that CROCUS grain size is on average a factor of two larger than MODIS-derived SGS. Overall, the agreement between CROCUS and MODIS results was satisfactory, in particular before and during the first melting period in mid-June. Following detailed time series analysis of SGS for four permanent sites, the paper presents SGS maps over the Greenland ice sheet for the March-September period of 2004.

Mask characterization for critical dimension uniformity budget breakdown in advanced extreme ultraviolet lithography

NASA Astrophysics Data System (ADS)

Nikolsky, Peter; Strolenberg, Chris; Nielsen, Rasmus; Nooitgedacht, Tjitte; Davydova, Natalia; Yang, Greg; Lee, Shawn; Park, Chang-Min; Kim, Insung; Yeo, Jeong-Ho

2013-04-01

As the International Technology Roadmap for Semiconductors critical dimension uniformity (CDU) specification shrinks, semiconductor companies need to maintain a high yield of good wafers per day and high performance (and hence market value) of finished products. This cannot be achieved without continuous analysis and improvement of on-product CDU as one of the main drivers for process control and optimization with better understanding of main contributors from the litho cluster: mask, process, metrology and scanner. We will demonstrate a study of mask CDU characterization and its impact on CDU Budget Breakdown (CDU BB) performed for advanced extreme ultraviolet (EUV) lithography with 1D (dense lines) and 2D (dense contacts) feature cases. We will show that this CDU contributor is one of the main differentiators between well-known ArFi and new EUV CDU budgeting principles. We found that reticle contribution to intrafield CDU should be characterized in a specific way: mask absorber thickness fingerprints play a role comparable with reticle CDU in the total reticle part of the CDU budget. Wafer CD fingerprints, introduced by this contributor, may or may not compensate variations of mask CDs and hence influence on total mask impact on intrafield CDU at the wafer level. This will be shown on 1D and 2D feature examples. Mask stack reflectivity variations should also be taken into account: these fingerprints have visible impact on intrafield CDs at the wafer level and should be considered as another contributor to the reticle part of EUV CDU budget. We also observed mask error enhancement factor (MEEF) through field fingerprints in the studied EUV cases. Variations of MEEF may play a role towards the total intrafield CDU and may need to be taken into account for EUV lithography. We characterized MEEF-through-field for the reviewed features, with results herein, but further analysis of this phenomenon is required. This comprehensive approach to quantifying the mask part of the overall EUV CDU contribution helps deliver an accurate and integral CDU BB per product/process and litho tool. The better understanding of the entire CDU budget for advanced EUVL nodes achieved by Samsung and ASML helps extend the limits of Moore's Law and to deliver successful implementation of smaller, faster and smarter chips in semiconductor industry.