Lethal activity of individual and mixed monoterpenoids of geranium essential oil on Musca domestica.

PubMed

Gallardo, Anabella; Picollo, María Inés; Mougabure-Cueto, Gastón

2015-03-01

Plant essential oils and its constituent molecules have been suggested as an alternative to control insect. The contribution of the constituents to the effect of the oil is determined by the interactions occurring between them. Synergistic interactions would improve the insecticide efficacy of the compounds due to the utilization of lower doses. We evaluated the insecticidal activity of geranium (Geranium maculatum L.) oil and its major constituents against Musca domestica L. and studied the toxic interactions in artificial mixtures of those constituents in the natural ratio. While synergistic interactions were determined in house fly in this study, these were of low intensity evidencing that the effect of each constituent was slightly modified by the other constituents present in the mixtures. The search for synergism between components is a strategy to improve the insecticide activity of natural compounds. The synergism helps to reduce the environmental and toxicological impact due to the reduction of the dose of use.

Analysis and Confirmation of 1,3-DMAA and 1,4-DMAA in Geranium Plants Using High Performance Liquid Chromatography with Tandem Mass Spectrometry at ng/g Concentrations

PubMed Central

Fleming, Heather L.; Ranaivo, Patricia L.; Simone, Paul S.

2012-01-01

1,3-Dimethylamylamine (1,3-DMAA) is a stimulant commercially sold in a variety of dietary supplements as a chemical species derived from geranium plants (Pelargonium graveolens). Whether 1,3-DMAA naturally occurs in geranium plants or other dietary ingredients, it has important regulatory and commercial ramifications. However, the analysis of 1,3-DMAA in geranium plants is not trivial due to low concentrations and a complex environmental matrix, requiring high selectivity and sensitivity. An extraction method combined with high performance liquid chromatography and tandem mass spectrometry is used to determine 1,3-DMAA and 1,4-dimethylamylamine (1,4-DMAA) concentrations in geranium plants with both external calibration and standard addition method. Samples from the Changzhou, Kunming, and Guiyang regions of China during both winter and summer were analyzed for 1,3-DMAA and 1,4-DMAA. The diastereomer ratios of the 1,3-DMAA stereoisomers of a racemic standard and the extracted plant were also quantified. PMID:23225994

Effect of Variable Solvents on Particle Size of Geranium Oil-Loaded Solid Lipid Nanoparticle (Ge-SLN) For Mosquito Repellent Applications

NASA Astrophysics Data System (ADS)

Asnawi, Syalwati; Aziz, Azila A.; Aziz, Ramlan A.

2009-06-01

A new delivery system for insect repellent is proposed by the incorporation of geranium oil into solid lipid nanoparticle (SLN). A variety of solvents which act as co-surfactants, were introduced to increase the particle size of GE-SLN. Ethanol, which has a high boiling point and a long chain alcohol produced larger particle than dichloromethane. The structure of SLN was not stable when methanol and acetone were used as co-solvents. Concentration of solvents can also influence the size of SLN. In vitro release experiments showed that SLN was able to reduce the rapid evaporation of geranium oil.

Herbivore pressure by weevils associated with flower color polymorphism in Geranium thunbergii (Geraniaceae).

PubMed

Tsuchimatsu, Takashi; Yoshitake, Hiraku; Ito, Motomi

2014-03-01

Although floral herbivory has recently received increased attention as an important factor influencing plant reproduction, relatively little is known about how its frequency and intensity vary depending on traits of host plants. Here we report that herbivore pressure by a weevil, Zacladus geranii, is associated with a flower color polymorphism of Geranium thunbergii (Geraniaceae). Pink and white flower color morphs have been reported in G. thunbergii, and we found in a three-year field survey in multiple populations that, generally, adult weevils more preferentially visited white flowers than pink flowers. Consistently, we found more severe damage by weevil larvae in white flowers. Overall herbivore pressure for G. thunbergii varied strongly between populations, and the difference seems to be partly explained by the co-occurrence of a related plant species, Geranium yezoense, in a population, as weevils preferred it to both color morphs of G. thunbergii, thereby relaxing overall herbivore pressure for G. thunbergii. Nonetheless, despite such high variability, the preference of weevils for white morphs over pink morphs of G. thunbergii was found across multiple populations. We discuss possible mechanisms causing the association between flower color and herbivore preference as well as its evolutionary consequences.

De novo transcriptome analysis of rose-scented geranium provides insights into the metabolic specificity of terpene and tartaric acid biosynthesis.

PubMed

Narnoliya, Lokesh K; Kaushal, Girija; Singh, Sudhir P; Sangwan, Rajender S

2017-01-13

Rose-scented geranium (Pelargonium sp.) is a perennial herb that produces a high value essential oil of fragrant significance due to the characteristic compositional blend of rose-oxide and acyclic monoterpenoids in foliage. Recently, the plant has also been shown to produce tartaric acid in leaf tissues. Rose-scented geranium represents top-tier cash crop in terms of economic returns and significance of the plant and plant products. However, there has hardly been any study on its metabolism and functional genomics, nor any genomic expression dataset resource is available in public domain. Therefore, to begin the gains in molecular understanding of specialized metabolic pathways of the plant, de novo sequencing of rose-scented geranium leaf transcriptome, transcript assembly, annotation, expression profiling as well as their validation were carried out. De novo transcriptome analysis resulted a total of 78,943 unique contigs (average length: 623 bp, and N50 length: 752 bp) from 15.44 million high quality raw reads. In silico functional annotation led to the identification of several putative genes representing terpene, ascorbic acid and tartaric acid biosynthetic pathways, hormone metabolism, and transcription factors. Additionally, a total of 6,040 simple sequence repeat (SSR) motifs were identified in 6.8% of the expressed transcripts. The highest frequency of SSR was of tri-nucleotides (50%). Further, transcriptome assembly was validated for randomly selected putative genes by standard PCR-based approach. In silico expression profile of assembled contigs were validated by real-time PCR analysis of selected transcripts. Being the first report on transcriptome analysis of rose-scented geranium the data sets and the leads and directions reflected in this investigation will serve as a foundation for pursuing and understanding molecular aspects of its biology, and specialized metabolic pathways, metabolic engineering, genetic diversity as well as molecular breeding.

Effect of Inhalation of Aroma of Geranium Essence on Anxiety and Physiological Parameters during First Stage of Labor in Nulliparous Women: a Randomized Clinical Trial

PubMed Central

Rashidi Fakari, Fahimeh; Tabatabaeichehr, Mahbubeh; Kamali, Hossian; Rashidi Fakari, Farzaneh; Naseri, Maryam

2015-01-01

Introduction: Anxiety increases significantly during labor, especially among nulliparous women. Such anxiety may affect the progress of labor and physiological parameters. The use of essential oils of aromatic plants, or aromatherapy, is a non-invasive procedure that can decrease childbirth anxiety. This study examined the effect of inhalation of the aroma of geranium essential oil on the level of anxiety and physiological parameters of nulliparous women in the first stage of labor. Methods: In study, was carried out on 100 nulliparous women admitted to Bent al-Hoda Hospital in the city of Bojnord in North Khorasan province of Iran during 2012-2013. The women were randomly assigned to two groups of equal size, one experimental group (geranium essential oil) and one control (placebo) group. Anxiety levels were measured using Spielberger' questionnaire before and after intervention. Physiological parameters (systolic and diastolic blood pressure, respiratory rate, pulse rate) were also measured before and after intervention in both groups. Data analysis was conducted using the x2 test, paired t-test, Mann-Whitney U test, and Wilcox on test on SPSS 11.5. Results: The mean anxiety score decreased significantly after inhalation of the aroma of geranium essential oil. There was also a significant decrease in diastolic blood pressure. Conclusion: Aroma of essential oil of geraniums can effectively reduce anxiety during labor and can be recommended as a non-invasive anti-anxiety aid during childbirth. PMID:26161367

Energy Conversion Properties of ZnSiP2, a Lattice-Matched Material for Silicon-Based Tandem Photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martinez, Aaron D.; Warren, Emily L.; Gorai, Prashun

ZnSiP2 demonstrates promising potential as an optically active material on silicon. There has been a longstanding need for wide band gap materials that can be integrated with Si for tandem photovoltaics and other optoelectronic applications. ZnSiP2 is an inexpensive, earth abundant, wide band gap material that is stable and lattice matched with silicon. This conference proceeding summarizes our PV-relevant work on bulk single crystal ZnSiP2, highlighting the key findings and laying the ground work for integration into Si-based tandem devices.

Fractionation of the more active extracts of Geranium molle L.: a relationship between their phenolic profile and biological activity.

PubMed

Graça, V C; Dias, Maria Inês; Barros, Lillian; Calhelha, Ricardo C; Santos, P F; Ferreira, Isabel C F R

2018-04-25

Geranium molle L., commonly known as Dove's-foot Crane's-bill or Dovesfoot Geranium, is an herbaceous plant belonging to the Geraniaceae family. Contrary to many other Geranium species, the bioactivity and the phytochemical composition of G. molle seem not to have attracted attention until a recent study from our group regarding the bioactivity of several aqueous and organic extracts of the plant. In particular, we assessed the cytotoxic activity of these extracts against several human tumor cell lines (breast, lung, cervical and hepatocellular carcinomas) and a non-tumor porcine liver primary cell line, inspired by an ethnopharmacological report describing the traditional use of this medicinal plant in some regions of Northeast Portugal for the treatment of cancer. Following this preliminary evaluation, the most active extracts (acetone and methanol) were fractionated by column chromatography and the resulting fractions were evaluated for their antioxidant activity and cytotoxicity against the same cell lines. The bio-guided fractionation of the extracts resulted in several fractions exhibiting improved bioactivity in comparison with the corresponding crude extracts. The fractions obtained from the acetone extract consistently displayed the lowest EC50 and GI50 values and presented the highest content of total phenolic compounds. The phytochemical composition of the most bioactive fractions of the acetone and methanol extracts was also determined and about thirty compounds, mainly flavonoids and phenolic acids, could be identified for the first time in G. molle.

Changes in leaf water relations, gas exchange, growth and flowering quality in potted geranium plants irrigated with different water regimes.

PubMed

Sánchez-Blanco, Ma Jesús; Alvarez, Sara; Navarro, Alejandra; Bañón, Sebastián

2009-03-15

Geranium plants are an important part of urban green areas but suffer from drought, especially when grown in containers with a limited volume of medium. In this experiment, we examined the response of potted geraniums to different irrigation levels. Geranium (Pelargoniumxhortorum L.) seedlings were grown in a growth chamber and exposed to three irrigation treatments, whereby the plants were irrigated to container capacity (control), 60% of the control (moderate deficit irrigation, MDI), or 40% of the control (severe deficit irrigation, SDI). Deficit irrigation was maintained for 2 months, and then all the plants were exposed to a recovery period of 112 month. Exposure to drought induced a decrease in shoot dry weight and leaf area and an increase in the root/shoot ratio. Height and plant width were significantly inhibited by the SDI, while flower color parameters were not affected by deficit treatment. The number of wilting and yellow leaves increased, coinciding with the increase in the number of inflorescences and open flowers. Deficit irrigation led to a leaf water potential of about -0.8MPa at midday, which could have caused an important decrease in stomatal conductance, affecting the photosynthetic rate (Pn). Chlorophyll fluorescence (Fvm) values of 0.80 in all treatments throughout the experiment demonstrate the lack of drought-induced damage to PSII photochemistry. Pressure-volume analysis revealed low osmotic adjustment values of 0.2MPa in the SDI treatment, accompanied by increases in the bulk tissue elastic modulus (epsilon, wall rigidity) and resulting in turgor loss at lower leaf water potential values (-1.38MPa compared with -1.0MPa for the control). Leaf water potential values throughout the experiment below those for Psitlp were not found at any sampling time. By the end of the recovery period, the leaf water potential, stomatal conductance and net photosynthesis had recovered. We infer from these results that moderate deficit irrigation in geranium

Fertilization and Colors of Plastic Mulch Affect Biomass and Essential Oil of Sweet-Scented Geranium

PubMed Central

Silva, Anderson de Carvalho; dos Santos, Wallace Melo; Prata, Paloma Santana; Alves, Péricles Barreto

2014-01-01

Sweet-scented geranium (Pelargonium graveolens L'Hér), a plant belonging to the Geraniaceae family, has medicinal and aromatic properties and is widely used in the cosmetic, soap, perfume, aromatherapy, and food industries. The aim of this study was to evaluate the influence of fertilization and the use of different colors of plastic mulch on sweet-scented geranium biomass and essential oil. Three colors of plastic mulch (black, white, and silver-colored) and a control without plastic mulch were assessed along with three fertilizers (20,000 L·ha−1 of cattle manure; 1,000 kg·ha−1 of NPK 3-12-6; and 20,000 L·ha−1 of cattle manure + 1,000 kg·ha−1 of NPK 3-12-6 fertilizer) and a control without fertilizer. The absence of a soil cover negatively influenced the agronomical variables, while coverage with plastic mulch was associated with increased biomass. The use of fertilizer had no effect on the evaluated agronomic variables. When cattle manure and NPK 3-12-6 were used together, combined with white or black plastic mulch, the highest yields of essential oil were obtained. For the silver-colored plastic mulch, higher amounts of essential oil (6,9-guaiadien) were obtained with mineral fertilizer. PMID:24757440

Transcriptome mining and in silico structural and functional analysis of ascorbic acid and tartaric acid biosynthesis pathway enzymes in rose-scanted geranium.

PubMed

Narnoliya, Lokesh K; Sangwan, Rajender S; Singh, Sudhir P

2018-06-01

Rose-scented geranium (Pelargonium sp.) is widely known as aromatic and medicinal herb, accumulating specialized metabolites of high economic importance, such as essential oils, ascorbic acid, and tartaric acid. Ascorbic acid and tartaric acid are multifunctional metabolites of human value to be used as vital antioxidants and flavor enhancing agents in food products. No information is available related to the structural and functional properties of the enzymes involved in ascorbic acid and tartaric acid biosynthesis in rose-scented geranium. In the present study, transcriptome mining was done to identify full-length genes, followed by their bioinformatic and molecular modeling investigations and understanding of in silico structural and functional properties of these enzymes. Evolutionary conserved domains were identified in the pathway enzymes. In silico physicochemical characterization of the catalytic enzymes revealed isoelectric point (pI), instability index, aliphatic index, and grand average hydropathy (GRAVY) values of the enzymes. Secondary structural prediction revealed abundant proportion of alpha helix and random coil confirmations in the pathway enzymes. Three-dimensional homology models were developed for these enzymes. The predicted structures showed significant structural similarity with their respective templates in root mean square deviation analysis. Ramachandran plot analysis of the modeled enzymes revealed that more than 84% of the amino acid residues were within the favored regions. Further, functionally important residues were identified corresponding to catalytic sites located in the enzymes. To, our best knowledge, this is the first report which provides a foundation on functional annotation and structural determination of ascorbic acid and tartaric acid pathway enzymes in rose-scanted geranium.

Evaluation of anti-Candida potential of geranium oil constituents against clinical isolates of Candida albicans differentially sensitive to fluconazole: inhibition of growth, dimorphism and sensitization.

PubMed

Zore, Gajanan B; Thakre, Archana D; Rathod, V; Karuppayil, S Mohan

2011-07-01

Fluconazole (FLC) susceptibility of isolates of Candida spp., (n = 42) and efficacy as well as mechanism of anti-Candida activity of three constituents of geranium oil is evaluated in this study. No fluconazole resistance was observed among the clinical isolates tested, however 22% were susceptible-dose-dependent (S-DD) [minimal inhibitory concentration (MIC) ≥ 16 μg ml(-1)] and a standard strain of C. albicans ATCC 10231 was resistant (≥ 64 μg ml(-1)). Geraniol and geranyl acetate were equally effective, fungicidal at 0.064% v/v concentrations i.e. MICs (561 μg ml(-1) and 584 μg ml(-1) respectively) and killed 99.9% inoculum within 15 and 30 min of exposures respectively. Citronellol was least effective and fungistatic. C. albicans dimorphism (Y → H) was highly sensitive to geranium oil constituents tested (IC50 approximately 0.008% v/v). Geraniol, geranyl acetate and citronellol brought down MICs of FLC by 16-, 32- and 64-fold respectively in a FLC-resistant strain. Citronellol and geraniol arrested cells in G1 phase while geranyl acetate in G2-M phase of cell cycle at MIC(50). In vitro cytotoxicity study revealed that geraniol, geranyl acetate and citronellol were non-toxic to HeLa cells at MICs of the C. albicans growth. Our results indicate that two of the three geranium oil constituents tested exhibit excellent anti-Candida activity and significant synergistic activity with fluconazole. © 2010 Blackwell Verlag GmbH.

Silicon-on-Insulator Pin Diodes.

DTIC Science & Technology

1987-12-01

Thin (0.5 Micron) Silicon-on-Oxidized Silicon Fig. 2.8 SEM Photographs of CVD Silicon Dioxide on Aluminum 28 After 1500 0 C Anneal in Oxygen...silicon nitride over the silicon dioxide encapsu- -9- lation layer and by depositing the silicon dioxide with a plasma CVD process which uses N20 as...relief via thermal expansion matching varies lin- -27- A B Figure 2.8: SEM Photographs of CVD Silicon Dioxide on Aluminum after 15000 C Anneal in Oxygen

Improved efficiency of perovskite-silicon tandem solar cell near the matched optical absorption between the subcells

NASA Astrophysics Data System (ADS)

Iftiquar, S. M.; Jung, Junhee; Yi, Junsin

2017-10-01

Current matching in a tandem solar cell is significant, because in a mismatched device the lowest current generating subcell becomes the current limiting component, and overall device efficiency remains lower than that could be obtained in the current matched device. Recent reports on methyl ammonium lead iodide (MAPbI3) based thin film solar cell has drawn interest to a perovskite-silicon tandem solar cell. Therefore, we investigated such a tandem solar cell theoretically. We used a MAPbI3 based top and heterojunction with intrinsic thin layer silicon (HIT) bottom subcell. Optimization of the device structure was carried out by varying thickness of perovskite layer of top-cell from 50 to 1000 nm, while thickness of active layer of the HIT cell was kept constant, to 500 µm. Single-junction solar cell, formed with the bottom subcell had open circuit voltage (V oc) of 705.1 mV, short circuit current density (J sc) of 28.22 mA cm-2, fill factor (FF) of 0.82 and efficiency of 16.4% under AM1.5G insolation. A relatively low thickness (150 nm) of the perovskite absorber layer was found optimum for the top-subcell to achieve best efficiency of the tandem cell, partly because of intermediate reflection at the interface between the two cells. We obtained a maximum of 20.92% efficiency of the tandem solar cell, which is higher by a factor of 1.27 from the starting HIT cell and a factor 1.47 higher from the perovskite cell efficiency. J sc of the optimized tandem cell was 13.06 mA cm-2. This was achieved near the matching optical absorption or current-density of the component subcells. For a practical application, the device used in our investigation was without textured front surface. An ordinary HIT bottom-cell was used with lower J sc. Therefore, with an improved HIT subcell, efficiency of the tandem cell, higher than 21% will be achievable.

Iodine 125 Brachytherapy With Vitrectomy and Silicone Oil in the Treatment of Uveal Melanoma: 1-to-1 Matched Case-Control Series

DOE Office of Scientific and Technical Information (OSTI.GOV)

McCannel, Tara A., E-mail: TMcCannel@jsei.ucla.edu; McCannel, Colin A.

Purpose: We initially reported the radiation-attenuating effect of silicone oil 1000 centistokes for iodine 125. The purpose of this report was to compare the clinical outcomes in case patients who had iodine 125 brachytherapy with vitrectomy and silicone oil 1000 centistokes with the outcomes in matched control patients who underwent brachytherapy alone. Methods and Materials: Consecutive patients with uveal melanoma who were treated with iodine 125 plaque brachytherapy and vitrectomy with silicone oil with minimum 1-year follow-up were included. Control patients who underwent brachytherapy alone were matched for tumor size, location, and sex. Baseline patient and tumor characteristics and tumor response tomore » radiation, final visual acuity, macular status, central macular thickness by ocular coherence tomography (OCT), cataract progression, and metastasis at last follow-up visit were compared. Surgical complications were also determined. Results: Twenty case patients met the inclusion criteria. The average follow-up time was 22.1 months in case patients and 19.4 months in control patients. The final logMAR vision was 0.81 in case patients and 1.1 in control patients (P=.071); 8 case patients and 16 control patients had abnormal macular findings (P=.011); and the average central macular thickness by OCT was 293.2 μm in case patients and 408.5 μm in control patients (P=.016). Eleven case patients (55%) and 1 control patient (5%) had required cataract surgery at last follow-up (P=.002). Four patients in the case group and 1 patient in the control group experienced metastasis (P=.18). Among the cases, intraoperative retinal tear occurred in 3 patients; total serous retinal detachment and macular hole developed in 1 case patient each. There was no case of rhegmatogenous retinal detachment, treatment failure, or local tumor dissemination in case patients or control patients. Conclusions: With up to 3 years of clinical follow-up, silicone oil during

Periodically poled silicon

NASA Astrophysics Data System (ADS)

Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Jalali, Bahram

2009-03-01

We propose a new class of photonic devices based on periodic stress fields in silicon that enable second-order nonlinearity as well as quasi-phase matching. Periodically poled silicon (PePSi) adds the periodic poling capability to silicon photonics and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on second-order nonlinear effects. As an example of the utility of the PePSi technology, we present simulations showing that midwave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50%.

Three-State Quantum Dot Gate FETs Using ZnS-ZnMgS Lattice-Matched Gate Insulator on Silicon

NASA Astrophysics Data System (ADS)

Karmakar, Supriya; Suarez, Ernesto; Jain, Faquir C.

2011-08-01

This paper presents the three-state behavior of quantum dot gate field-effect transistors (FETs). GeO x -cladded Ge quantum dots (QDs) are site-specifically self-assembled over lattice-matched ZnS-ZnMgS high- κ gate insulator layers grown by metalorganic chemical vapor deposition (MOCVD) on silicon substrates. A model of three-state behavior manifested in the transfer characteristics due to the quantum dot gate is also presented. The model is based on the transfer of carriers from the inversion channel to two layers of cladded GeO x -Ge quantum dots.

Ozone and infection of geranium flowers by Botrytis cinerea

DOE Office of Scientific and Technical Information (OSTI.GOV)

Manning, W.J.; Feder, W.A.; Perkins, I.

1970-01-01

Flowering plants of geranium cultivars were exposed to 0.2, 0.35, and 0.55 ppm ozone for 4-hr periods at 20/sup 0/C in a greenhouse fumigation chamber. Three fully-opened flower heads were sprayed with a spore suspension of Botrytis cinerea at 2000, 1000, or 500 spores/ml immediately before exposure to ozone began. Sterile distilled water was sprayed on noninoculated flower heads. All flowers were examined for evidence of infection 24 hr after the end of the ozone-exposure periods. All flower heads were then removed and placed in wet, loosely tied plastic bags and incubated at 20/sup 0/C for 72 hr, with examinationmore » at 24-hr intervals for evidence of infection. Ozone at 0.2 ppm did not injure the plants or prevent or inhibit flower infection by B. cinerea at all inoculum levels. Natural infection also occurred on some noninoculated flowers. Ozone at 0.35 ppm did not injure the plants or prevent infection, but did inhibit pathogenesis at the 500-spore/ml inoculum level and on noninoculated flowers. Ozone at 0.55 ppm caused moderate injury on all plants. Ozone at this level did not prevent infection, but did restrict pathogenesis on all inoculated and noninoculated flowers.« less

Hepatoprotective effect of Geranium schiedeanum against ethanol toxicity during liver regeneration

PubMed Central

Madrigal-Santillán, Eduardo; Bautista, Mirandeli; Gayosso-De-Lucio, Juan A; Reyes-Rosales, Yadira; Posadas-Mondragón, Araceli; Morales-González, Ángel; Soriano-Ursúa, Marvin A; García-Machorro, Jazmín; Madrigal-Bujaidar, Eduardo; Álvarez-González, Isela; Morales-González, José A

2015-01-01

AIM: To evaluate the effect of an extract of Geranium schiedeanum (Gs) as a hepatoprotective agent against ethanol (EtOH)-induced toxicity in rats. METHODS: Male Wistar rats weighing 200-230 g were subjected to a 70% partial hepatectomy (PH); they were then divided into three groups (groups 1-3). During the experiment, animals in group 1 drank only water. The other two groups (2-3) drank an aqueous solution of EtOH (40%, v/v). Additionally, rats in group 3 received a Gs extract daily at a dose of 300 mg/kg body weight intragastically. Subsequently, to identify markers of liver damage in serum, alanine aminotransferase, aspartate aminotransferase, albumin and bilirubin were measured by colorimetric methods. Glucose, triglyceride and cholesterol concentrations were also determined. In addition, oxidative damage was estimated by measuring lipid peroxidation [using thiobarbituric-acid reactive substances (TBARS)] in both plasma and the liver and by measuring the total concentration of antioxidants in serum and the total antioxidant capacity in the liver. In addition, a liver mass gain assessment, total DNA analysis and a morpho-histological analysis of the liver from animals in all three groups were performed and compared. Finally, the number of deaths observed in the three groups was analyzed. RESULTS: Administration of the Geranium shiedeanum extract significantly reduced the unfavorable effect of ethanol on liver regeneration (restitution liver mass: PH-EtOH group 60.68% vs PH-Gs-EtOH group 69.22%). This finding was congruent with the reduced levels of hepatic enzymes and the sustained or increased levels of albumin and decreased bilirubin in serum. The extract also modified the metabolic processes that regulate glucose and lipid levels, as observed from the serum measurements. Lower antioxidant levels and the liver damage induced by EtOH administration appeared to be mitigated by the extract, as observed from the TBARs (PH-EtOH group 200.14 mmol/mg vs PH

The vapor activity of oregano, perilla, tea tree, lavender, clove, and geranium oils against a Trichophyton mentagrophytes in a closed box.

PubMed

Inouye, Shigeharu; Nishiyama, Yayoi; Uchida, Katsuhisa; Hasumi, Yayoi; Yamaguchi, Hideyo; Abe, Shigeru

2006-12-01

The vapor activity of six essential oils against a Trichophyton mentagrophytes was examined using a closed box. The antifungal activity was determined from colony size, which was correlated with the inoculum size. As judged from the minimum inhibitory dose and the minimum fungicidal dose determined after vapor exposure for 24 h, the vapor activity of the six essential oils was ranked in the following order: oregano > clove, perilla > geranium, lavender, tea tree. The vapors of oregano, perilla, tea tree, and lavender oils killed the mycelia by short exposure, for 3 h, but the vapors of clove and geranium oils were only active after overnight exposure. The vapor of oregano and other oils induced lysis of the mycelia. Morphological examination by scanning electron microscope (SEM) revealed that the cell membrane and cell wall were damaged in a dose- and time-dependent manner by the action of oregano vapor, causing rupture and peeling of the cell wall, with small bulges coming from the cell membrane. The vapor activity increased after 24 h, but mycelial accumulation of the active oil constituents was maximized around 15 h, and then decreased in parallel with the decrease of vapor concentration. This suggested that the active constituent accumulated on the fungal cells around 15 h caused irreversible damage, which eventually led to cellular death.

Hair growth-promoting effect of Geranium sibiricum extract in human dermal papilla cells and C57BL/6 mice.

PubMed

Boisvert, William A; Yu, Miri; Choi, Youngbin; Jeong, Gi Hee; Zhang, Yi-Lin; Cho, Sunghun; Choi, Changsun; Lee, Sanghyun; Lee, Bog-Hieu

2017-02-13

Geranium sibiricum L. has been used as a medicinal plant to treat diarrhea, bacterial infection, and cancer in Bulgaria, Peru, and Korea. However, its hair growth-promoting effect was not investigated so far. This study examined the effects of Geranium sibiricum L. extract (GSE) on hair growth, using in vitro and in vivo models. Antioxidant, proliferation and migration assay of GSE was performed with human dermal papilla cells (hDPCs). Hair-growth promoting effect was measured in animal model. Relative expression of interleukin-1, vascular endothelial growth factor, hepatocyte growth factor, and transforming growth factor beta 1 was determined by real time RT-PCR. Expression of Ki-67 and stem cell factor were analyzed by immunohistochemistry. GSE treatment proliferated and migrated human dermal papilla cells (hDPCs) more than treatment of 10 μM minoxidil. GSE significantly stimulated the expression of Ki-67 protein and the mRNA levels of hepatocyte growth factor and vascular endothelial growth factor in hDPCs. Topical application of 1,000 ppm GSE for 3 weeks promoted more significant hair growth on shaved C57BL/6 mice than did 5% minoxidil. The histological morphology of hair follicles demonstrated an active anagen phase with the induction of stem cell factor. GSE treatment significantly reduced the number of mast cells and the expression of transforming growth factor beta 1 in mouse skin tissues. These results demonstrated that GSE promotes hair growth in vitro and in vivo by regulating growth factors and the cellular response.

Choosing a Silicone Encapsulant for Photovoltaic Applications

NASA Astrophysics Data System (ADS)

Velderrain, Michelle

2011-12-01

Growth in the solar industry has resulted in newer technologies, specifically concentrator photovoltaic (CPV) modules, to explore using new types of materials such as silicone encapsulants. CPV and LCPV module designs are to achieve the most efficient energy conversion possible however it is equally important to demonstrate long term reliability. Silicone is a material of interest due to its thermal stability and ability to absorb stresses incurred during thermal cycling. The refractive index of clear silicone adhesives is advantageous because it can be optimized using phenyl groups to match BK7 glass and other substrates to minimize light loss at the interfaces but it is relatively unknown how the optical properties change over time possibly yellowing in such a harsh environment. A 1.41 silicone encapsulant is compared to a 1.52 refractive index silicone. Optical Absorption (300 nm-1300 nm), Water Vapor Permeability, Moisture Absorption and effects of oxidation at elevated temperatures will be compared of these materials to aid the engineer in choosing a silicone for their CPV application. Non-phenyl containing 1.41 RI silicones have been used for several years for bonding solar arrays in the satellite industry. Phenyl groups on the siloxane polymer can change various properties of the silicone. Understanding how phenyl affects these properties allows the engineer to understand the benefits and risks when using a RI matching silicone to minimize light loss versus a non-phenyl containing silicone.

[Optimization of extraction process for tannins from Geranium orientali-tibeticum by supercritical CO2 method].

PubMed

Xie, Song; Tong, Zhi-Ping; Tan, Rui; Liu, Xiao-Zhen

2014-08-01

In order to optimize extraction process conditions of tannins from Geranium orientali-tibeticum by supercritical CO2, the content of tannins was determined by phosphomolybdium tungsten acid-casein reaction, with extraction pressure, extraction temper- ature and extraction time as factors, the content of tannins from extract of G. orientali-tibeticum as index, technology conditions were optimized by orthogonal test. Optimum technology conditions were as follows: extraction pressure was 25 MPa, extraction temperature was 50 °C, extracted 1.5 h. The content of tannins in extract was 12.91 mg x g(-1), extract rate was 3.67%. The method established could be used for assay the contents of tannin in G. orientali-tibeticum. The circulated extraction was an effective extraction process that was stable and feasible, and that provides a way of the extraction process conditions of tannin from G. orientali-tibeticum.

Chemical characterization and bioactive properties of Geranium molle L.: from the plant to the most active extract and its phytochemicals.

PubMed

Graça, V C; Barros, Lillian; Calhelha, Ricardo C; Dias, Maria Inês; Carvalho, Ana Maria; Santos-Buelga, Celestino; Ferreira, Isabel C F R; Santos, P F

2016-05-18

After a period of indifference, in which synthetic compounds were favored, there is an increasing interest in the study of the biological properties of plants and the active principles responsible for their therapeutic properties. Geranium molle L. has been used in the Portuguese folk medicine for the treatment of various ailments including cancer but, unlike many of the species from the Geranium genus, its phytochemical characterization and biological activity are virtually unexplored. In this study a G. molle sample from Trás-os-Montes, north-eastern Portugal, was chemically characterized regarding nutritional value, free sugars, organic acids, fatty acids and tocopherols, and several aqueous (decoction, infusion) and organic (n-hexane, dichloromethane, ethyl acetate, acetone, methanol) extracts of the plant were assessed for their bioactive properties. The antioxidant activity was evaluated by means of the free radicals scavenging activity, reducing power and inhibition of lipid peroxidation. The cytotoxicity of the different extracts was assessed in vitro against several human cancer cell lines (breast, lung, cervical and hepatocellular carcinomas) and, additionally, their hepatotoxicity was evaluated using a porcine liver primary cell culture. G. molle was shown to be rich in carbohydrates and proteins, providing tocopherols and essential fatty acids. Amongst the various extracts, the acetone extract was found to have the highest content of phenolic compounds (mainly ellagitannins, but also some flavone and flavonol glycosides) as well as the highest antioxidant and cytotoxic activities. To the best of our knowledge, this is the first report on the chemical composition and bioactive properties of G. molle.

InGaAlAsPN: A Materials System for Silicon Based Optoelectronics and Heterostructure Device Technologies

NASA Technical Reports Server (NTRS)

Broekaert, T. P. E.; Tang, S.; Wallace, R. M.; Beam, E. A., III; Duncan, W. M.; Kao, Y. -C.; Liu, H. -Y.

1995-01-01

A new material system is proposed for silicon based opto-electronic and heterostructure devices; the silicon lattice matched compositions of the (In,Ga,Al)-(As,P)N 3-5 compounds. In this nitride alloy material system, the bandgap is expected to be direct at the silicon lattice matched compositions with a bandgap range most likely to be in the infrared to visible. At lattice constants ranging between those of silicon carbide and silicon, a wider bandgap range is expected to be available and the high quality material obtained through lattice matching could enable applications such as monolithic color displays, high efficiency multi-junction solar cells, opto-electronic integrated circuits for fiber communications, and the transfer of existing 3-5 technology to silicon.

Chemical characterization and bioactive properties of aqueous and organic extracts of Geranium robertianum L.

PubMed

Graça, V C; Barros, Lillian; Calhelha, Ricardo C; Dias, Maria Inês; Carvalho, Ana Maria; Santos-Buelga, Celestino; Santos, P F; Ferreira, Isabel C F R

2016-09-14

Geranium robertianum L. has been used in folk medicine and herbalism practice for the treatment of various conditions, but the study of its bioactivity has been barely addressed. Although its phytochemical composition has received some attention, contributions to the nutritional composition are practically unknown. Herein, G. robertianum gathered in Trás-os-Montes, Northeastern Portugal, was chemically characterized regarding nutritional parameters, and the antioxidant activity and cytotoxicity against several human tumor cell lines and non-tumor porcine liver primary cells of several aqueous and organic extracts were evaluated. G. robertianum showed to be an equilibrated valuable herb, rich in carbohydrates and proteins, and poor in fat, providing sugars, tocopherols, organic and essential fatty acids. Amongst the extracts, the acetone one showed the highest total phenol and total flavonoid contents, as well as the greatest antioxidant and cytotoxic activities. This extract showed to contain hydrolysable tannins (e.g. geraniin and castalagin/vescalagin), as the main phenolic compounds.

Using a colorimeter to develop an intrinsic silicone shade guide for facial prostheses.

PubMed

Over, L M; Andres, C J; Moore, B K; Goodacre, C J; Muñoz, C A

1998-12-01

To determine if using CIE L*a*b* color measurements of white facial skin could be correlated to those of silicone shade samples that visually matched the skin. Secondly, to see if a correlation in color measurements could be achieved between the silicone shade samples and duplicated silicone samples made using a shade-guide color formula. A color booth was designed according to ASTM specifications, and painted using a Munsell Value 8 gray. A Minolta colorimeter was used to make facial skin measurements on 15 white adults. The skin color was duplicated using custom-shaded silicone samples. A 7-step wedge silicone shade guide was then fabricated, representing the commonly encountered thicknesses when fabricating facial prostheses. The silicone samples were then measured with the Minolta colorimeter. The readings were compared with the previous L*a*b* readings from the corresponding patient's skin measurements, and the relative color difference was then calculated. Silicone samples were fabricated and analyzed for three of the patients to determine if duplication of the visually matched silicone specimen was possible using the silicone color formula, and if the duplicates were visually and colorimetrically equivalent to each other. The color difference Delta E and chromaticity was calculated, and the data were analyzed using a coefficient-of-variation formula expressed by percent. A Pearson Product Moment Correlation Coefficient was performed to determine if a correlation existed between the skin and the silicone samples at the p < or = .05 level. The highest correlation was found in the b* dimension for silicone thicknesses of 1 to 4 mm. For silicone thicknesses of 6 to 10 mm, the highest correlation was found in the L* dimension. All three dimensions had positive correlations (R2 > 0), but only the 1-mm and 4-mm b* readings were very strong. Patient and silicone L*a*b* measurement results showed very little change in the a* axis, while the L* and b* measurements

Hydrolyzable Tannins, Flavonol Glycosides, and Phenolic Acids Show Seasonal and Ontogenic Variation in Geranium sylvaticum.

PubMed

Tuominen, Anu; Salminen, Juha-Pekka

2017-08-09

The seasonal variation of polyphenols in the aboveground organs and roots of Geranium sylvaticum in four populations was studied using UPLC-DAD-ESI-QqQ-MS/MS. The content of the main compound, geraniin, was highest (16% of dry weight) in the basal leaves after the flowering period but stayed rather constant throughout the growing season. Compound-specific mass spectrometric methods revealed the different seasonal patterns in minor polyphenols. Maximum contents of galloylglucoses and flavonol glycosides were detected in the small leaves in May, whereas the contents of further modified ellagitannins, such as ascorgeraniin and chebulagic acid, increased during the growing season. In flower organs, the polyphenol contents differed significantly between ontogenic phases so that maximum amounts were typically found in the bud phase, except in pistils the amount of gallotannins increased significantly in the fruit phase. These results can be used in evaluating the role of polyphenols in plant-herbivore interactions or in planning the best collection times of G. sylvaticum for compound isolation purposes.

Periodically poled silicon

NASA Astrophysics Data System (ADS)

Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

2010-02-01

Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

Acoustic metamaterials with broadband and wide-angle impedance matching

NASA Astrophysics Data System (ADS)

Liu, Chenkai; Luo, Jie; Lai, Yun

2018-04-01

We propose a general approach to design broadband and wide-angle impedance-matched acoustic metamaterials. Such an unusual acoustic impedance matching characteristic can be well explained by using a spatially dispersive effective medium theory. For demonstrations, we used silicone rubber, which has a huge impedance contrast with water, to design one- and two-dimensional acoustic structures which are almost perfectly impedance matched to water for a wide range of incident angles and in a broad frequency band. Our work opens up an approach to realize extraordinary acoustic impedance matching properties via metamaterial-design techniques.

Investigation of phase matching for third-harmonic generation in silicon slow light photonic crystal waveguides using Fourier optics.

PubMed

Monat, Christelle; Grillet, Christian; Corcoran, Bill; Moss, David J; Eggleton, Benjamin J; White, Thomas P; Krauss, Thomas F

2010-03-29

Using Fourier optics, we retrieve the wavevector dependence of the third-harmonic (green) light generated in a slow light silicon photonic crystal waveguide. We show that quasi-phase matching between the third-harmonic signal and the fundamental mode is provided in this geometry by coupling to the continuum of radiation modes above the light line. This process sustains third-harmonic generation with a relatively high efficiency and a substantial bandwidth limited only by the slow light window of the fundamental mode. The results give us insights into the physics of this nonlinear process in the presence of strong absorption and dispersion at visible wavelengths where bandstructure calculations are problematic. Since the characteristics (e.g. angular pattern) of the third-harmonic light primarily depend on the fundamental mode dispersion, they could be readily engineered.

Nectar Sugar Production across Floral Phases in the Gynodioecious Protandrous Plant Geranium sylvaticum

PubMed Central

Varga, Sandra; Nuortila, Carolin; Kytöviita, Minna-Maarit

2013-01-01

Many zoophilous plants attract their pollinators by offering nectar as a reward. In gynodioecious plants (i.e. populations are composed of female and hermaphrodite individuals) nectar production has been repeatedly reported to be larger in hermaphrodite compared to female flowers even though nectar production across the different floral phases in dichogamous plants (i.e. plants with time separation of pollen dispersal and stigma receptivity) has rarely been examined. In this study, sugar production in nectar standing crop and secretion rate were investigated in Geranium sylvaticum, a gynodioecious plant species with protandry (i.e. with hermaphrodite flowers releasing their pollen before the stigma is receptive). We found that flowers from hermaphrodites produced more nectar than female flowers in terms of total nectar sugar content. In addition, differences in nectar production among floral phases were found in hermaphrodite flowers but not in female flowers. In hermaphrodite flowers, maximum sugar content coincided with pollen presentation and declined slightly towards the female phase, indicating nectar reabsorption, whereas in female flowers sugar content did not differ between the floral phases. These differences in floral reward are discussed in relation to visitation patterns by pollinators and seed production in this species. PMID:23614053

Microfabricated 1-3 composite acoustic matching layers for 15 MHz transducers.

PubMed

Manh, Tung; Jensen, Geir Uri; Johansen, Tonni F; Hoff, Lars

2013-08-01

Medical ultrasound transducers require matching layers to couple energy from the piezoelectric ceramic into the tissue. Composites of type 0-3 are often used to obtain the desired acoustic impedances, but they introduce challenges at high frequencies, i.e. non-uniformity, attenuation, and dispersion. This paper presents novel acoustic matching layers made as silicon-polymer 1-3 composites, fabricated by deep reactive ion etch (DRIE). This fabrication method is well-established for high-volume production in the microtechnology industry. First estimates for the acoustic properties were found from the iso-strain theory, while the Finite Element Method (FEM) was employed for more accurate modeling. The composites were used as single matching layers in 15 MHz ultrasound transducers. Acoustic properties of the composite were estimated by fitting the electrical impedance measurements to the Mason model. Five composites were fabricated. All had period 16 μm, while the silicon width was varied to cover silicon volume fractions between 0.17 and 0.28. Silicon-on-Insulator (SOI) wafers were used to get a controlled etch stop against the buried oxide layer at a defined depth, resulting in composites with thickness 83 μm. A slight tapering of the silicon side walls was observed; their widths were 0.9 μm smaller at the bottom than at the top, corresponding to a tapering angle of 0.3°. Acoustic parameters estimated from electrical impedance measurements were lower than predicted from the iso-strain model, but fitted within 5% to FEM simulations. The deviation was explained by dispersion caused by the finite dimensions of the composite and by the tapered walls. Pulse-echo measurements on a transducer with silicon volume fraction 0.17 showed a two-way -6 dB relative bandwidth of 50%. The pulse-echo measurements agreed with predictions from the Mason model when using material parameter values estimated from electrical impedance measurements. The results show the feasibility of

Interspecific variation in SO/sub 2/ flux: leaf surface versus internal flux, and components of leaf conductance. [Pisum sativum L. , Lycopersicon esculentum Mill. Flacca, Geranium carolinianum L. , Diplacus aurantiacus (Curtis) Jeps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Olszyk, D.M.; Tingey, D.T.

The objective of this study was to clarify the relationships among stomatal, residual, and epidermal conductances in determining the flux of SO/sub 2/ air pollution to leaves. Variations in leaf SO/sub 2/ and H/sub 2/O vapor fluxes were determined using four plant species: Pisum sativum L. (garden pea), Lycopersicon esculentum Mill. flacca (mutant of tomato), Geranium carolinianum L. (wild geranium), and Diplacus aurantiacus (Curtis) Jeps. (a native California shrub). Fluxes were measured using the mass-balance approach during exposure to 4.56 micromoles per cubic meter (0.11 microliters per liter) SO/sub 2/ for 2 hours in a controlled environmental chamber. Flux throughmore » adaxial and abaxial leaf surfaces with closed stomata ranged from 1.9 to 9.4 nanomoles per square meter per second for SO/sub 2/, and 0.3 to 1.3 millimoles per square meter per second for H/sub 2/O vapor. Flux of SO/sub 2/ into leaves through stomata ranged from approx.0 to 8.5 (dark) and 3.8 to 16.0 (light) millimoles per square meter per second. Flux of H/sub 2/O vapor from leaves through stomata ranged from approx.0 to 0.6 (dark) to 0.4 to 0.9 (light) millimole per square meter per second. Lycopersicon had internal flux rates for both SO/sub 2/ and H/sub 2/O vapor over twice as high as for the other species. Stomatal conductance based on H/sub 2/O vapor flux averaged from 0.07 to 0.13 mole per square meter per second among the four species. Internal conductance of SO/sub 2/ as calculated from SO/sub 2/ flux was from 0.04 mole per square meter per second lower to 0.06 mole per square meter per second higher than stomatal conductance. For Pisum, Geranium, and Diplacus stomatal conductance was the same or slightly higher than internal conductance, indicating that, in general, SO/sub 2/ flux could be predicted from stomatal conductance for H/sub 2/O vapor.« less

Nectar sugar production across floral phases in the Gynodioecious Protandrous Plant Geranium sylvaticum [corrected].

PubMed

Varga, Sandra; Nuortila, Carolin; Kytöviita, Minna-Maarit

2013-01-01

Many zoophilous plants attract their pollinators by offering nectar as a reward. In gynodioecious plants (i.e. populations are composed of female and hermaphrodite individuals) nectar production has been repeatedly reported to be larger in hermaphrodite compared to female flowers even though nectar production across the different floral phases in dichogamous plants (i.e. plants with time separation of pollen dispersal and stigma receptivity) has rarely been examined. In this study, sugar production in nectar standing crop and secretion rate were investigated in Geranium sylvaticum, a gynodioecious plant species with protandry (i.e. with hermaphrodite flowers releasing their pollen before the stigma is receptive). We found that flowers from hermaphrodites produced more nectar than female flowers in terms of total nectar sugar content. In addition, differences in nectar production among floral phases were found in hermaphrodite flowers but not in female flowers. In hermaphrodite flowers, maximum sugar content coincided with pollen presentation and declined slightly towards the female phase, indicating nectar reabsorption, whereas in female flowers sugar content did not differ between the floral phases. These differences in floral reward are discussed in relation to visitation patterns by pollinators and seed production in this species.

Investigating contact toxicity of Geranium and Artemisia essential oils on Bemisia tabaci Gen.

PubMed

Yarahmadi, Fatemeh; Rajabpour, Ali; Zandi Sohani, Nooshin; Ramezani, Leila

2013-01-01

Sweet potato whitefly, Bemisia tabaci Gen. (B. tabaci), is one of the most important pests of various greenhouse crops in Iran. Nowadays, chemical insecticides are broadly used for control of the pests that causes risk to consumer's health. For the first time, contact toxicity of Pelargonium roseum Andrews and Artemisia sieberi Besser essential oils on B. tabaci and its possible application against the whitefly was evaluated in 2012. Essential oil with concentrations of 2500, 1250, 125, and 12 ppm were used. Infested leaves of greenhouse cucumber were treated by mentioned concentrations. After 24 hours, mortality of B. tabaci was recorded and compared after correcting by Abbot's formula. RESULTS showed that all concentrations of the essential oil could significantly reduce population of B. tabaci compared with the control treatment. Phytotoxicity of the treated leaves were recorded after 24, 48, and 72 hours and compared with the control. Concentrations of 2500, 1250, and 125 ppm caused severe phytotoxicity on greenhouse cucumber leaves and therefore are not suitable for greenhouse application. Phytotoxicity of 12 ppm was relatively low. This data implicated suitable protective effects of the essential oils to the pest infestation. Therefore, essential oils distillated from Geranium and Artemisia could be applied to control B. tabaci in greenhouse cucumber at V/V 12 ppm.

A Custom Made Intrinsic Silicone Shade Guide for Indian Population

PubMed Central

Behanam, Mohammed; Ahila, S.C.; Jei, J. Brintha

2016-01-01

Introduction Replication of natural skin colour in maxillofacial prosthesis has been traditionally done using trial and error method, as concrete shade guides are unavailable till date. Hence a novel custom made intrinsic silicone shade guide has been attempted for Indian population. Aim Reconstruction of maxillofacial defects is challenging, as achieving an aesthetic result is not always easy. A concoction of a novel intrinsic silicone shade guide was contemplated for the study and its reproducibility in clinical practice was analysed. Materials and Methods Medical grade room temperature vulcanising silicone was used for the fabrication of shade tabs. The shade guide consisted of three main groups I, II and III which were divided based upon the hues yellow, red and blue respectively. Five distinct intrinsic pigments were added in definite proportions to subdivide each group of different values from lighter to darker shades. A total number of 15 circular shade tabs comprised the guide. To validate the usage of the guide, visual assessment of colour matching was done by four investigators to investigate the consent of perfect colour correspondence. Data was statistically analysed using kappa coefficients. Results The kappa values were found to be 0.47 to 0.78 for yellow based group I, 0.13 to 0.65 for red based group II, and 0.07 to 0.36 for blue based group III. This revealed that the shade tabs of yellow and red based hues matched well and showed a statistically good colour matching. Conclusion This intrinsic silicone shade guide can be effectively utilised for fabrication of maxillofacial prosthesis with silicone in Indian population. A transparent colour formula with definite proportioning of intrinsic pigments is provided for obtaining an aesthetic match to skin tone. PMID:27190946

High band gap 2-6 and 3-5 tunneling junctions for silicon multijunction solar cells

NASA Technical Reports Server (NTRS)

Daud, Taher (Inventor); Kachare, Akaram H. (Inventor)

1986-01-01

A multijunction silicon solar cell of high efficiency is provided by providing a tunnel junction between the solar cell junctions to connect them in series. The tunnel junction is comprised of p+ and n+ layers of high band gap 3-5 or 2-6 semiconductor materials that match the lattice structure of silicon, such as GaP (band gap 2.24 eV) or ZnS (band gap 3.6 eV). Each of which has a perfect lattice match with silicon to avoid defects normally associated with lattice mismatch.

Defensive strategies in Geranium sylvaticum. Part 1: organ-specific distribution of water-soluble tannins, flavonoids and phenolic acids.

PubMed

Tuominen, Anu; Toivonen, Eija; Mutikainen, Pia; Salminen, Juha-Pekka

2013-11-01

A combination of high-resolution mass spectrometry and modern HPLC column technology, assisted by diode array detection, was used for accurate characterization of water-soluble polyphenolic compounds in the pistils, stamens, petals, sepals, stems, leaves, roots and seeds of Geranium sylvaticum. The organs contained a large variety of polyphenols, five types of tannins (ellagitannins, proanthocyanidins, gallotannins, galloyl glucoses and galloyl quinic acids) as well as flavonoids and simple phenolic acids. In all, 59 compounds were identified. Geraniin and other ellagitannins dominated in all the green photosynthetic organs. The other organs seem to produce distinctive polyphenol groups: pistils accumulated gallotannins; petals acetylglucose derivatives of galloylglucoses; stamens kaempferol glycosides, and seeds and roots accumulated proanthocyanidins. The intra-plant distribution of the different polyphenol groups may reflect the different functions and importance of various types of tannins as the defensive chemicals against herbivory. Copyright © 2013 Elsevier Ltd. All rights reserved.

Proton Straggling in Thick Silicon Detectors

NASA Technical Reports Server (NTRS)

Selesnick, R. S.; Baker, D. N.; Kanekal, S. G.

2017-01-01

Straggling functions for protons in thick silicon radiation detectors are computed by Monte Carlo simulation. Mean energy loss is constrained by the silicon stopping power, providing higher straggling at low energy and probabilities for stopping within the detector volume. By matching the first four moments of simulated energy-loss distributions, straggling functions are approximated by a log-normal distribution that is accurate for Vavilov k is greater than or equal to 0:3. They are verified by comparison to experimental proton data from a charged particle telescope.

Investigating contact toxicity of Geranium and Artemisia essential oils on Bemisia tabaci Gen.

PubMed Central

Yarahmadi, Fatemeh; Rajabpour, Ali; Zandi Sohani, Nooshin; Ramezani, Leila

2013-01-01

Objective: Sweet potato whitefly, Bemisia tabaci Gen. (B. tabaci), is one of the most important pests of various greenhouse crops in Iran. Nowadays, chemical insecticides are broadly used for control of the pests that causes risk to consumer's health. For the first time, contact toxicity of Pelargonium roseum Andrews and Artemisia sieberi Besser essential oils on B. tabaci and its possible application against the whitefly was evaluated in 2012. Materials and Methods: Essential oil with concentrations of 2500, 1250, 125, and 12 ppm were used. Infested leaves of greenhouse cucumber were treated by mentioned concentrations. After 24 hours, mortality of B. tabaci was recorded and compared after correcting by Abbot's formula. Results: Results showed that all concentrations of the essential oil could significantly reduce population of B. tabaci compared with the control treatment. Phytotoxicity of the treated leaves were recorded after 24, 48, and 72 hours and compared with the control. Concentrations of 2500, 1250, and 125 ppm caused severe phytotoxicity on greenhouse cucumber leaves and therefore are not suitable for greenhouse application. Phytotoxicity of 12 ppm was relatively low. Conclusions: This data implicated suitable protective effects of the essential oils to the pest infestation. Therefore, essential oils distillated from Geranium and Artemisia could be applied to control B. tabaci in greenhouse cucumber at V/V 12 ppm. PMID:25050264

Sylvatiins, acetylglucosylated hydrolysable tannins from the petals of Geranium sylvaticum show co-pigment effect.

PubMed

Tuominen, Anu; Sinkkonen, Jari; Karonen, Maarit; Salminen, Juha-Pekka

2015-07-01

Four hydrolysable tannins, named as sylvatiins A (1), B (2), C (3) and D (4), were isolated from the petals of Geranium sylvaticum. On the basis of spectrometric evidence of NMR analysis ((1)H NMR, (13)C NMR, DQF-COSY, TOCSY, NOESY, HSQC and HMBC), circular dichroism (CD) and ESI-MS/MS, sylvatiins A, B and C were characterized as galloyl glucoses containing one or two acetylglucoses attached to the 3-OH of the galloyl group, whereas sylvatiin D was found to have a chebulinic acid core containing acetylglucose attached in a similar way. The potential of these compounds to act as defensive compounds against herbivores was evaluated using the radial diffusion assay that measures the protein precipitation capacity. In addition, the capacity of sylvatiins to act as co-pigments with anthocyanins of G. sylvaticum petals was measured in vitro at different pH values. Sylvatiins A and D maintained efficiently the purple flower color near the natural pH of petal cells. The amount of sylvatiins was changed according to the flower color; deep purple petals with higher amount of anthocyanin contained more sylvatiins A and C than whiter petals. It was concluded that G. sylvaticum petal cells may accumulate sylvatiins for intermolecular co-pigmentation purposes. Copyright © 2015 Elsevier Ltd. All rights reserved.

Optical silicones for use in harsh operating environments

NASA Astrophysics Data System (ADS)

Riegler, Bill; Bruner, Stephen J.; Elgin, Randall

2004-12-01

The optics industry widely uses silcones for various fiber optic cable potting applications and light emitting diode protection. Optics manufacturers know traditional silicone elastomers, gels, thixotropic gels, and fluids not only perform extremely well in high temperature applications, but also offer refractive index matching so that silicones can transmit light with admirable efficiency. However, because environmental conditions may affect a material's performance over time, one must also consider the conditions the device operates in to ensure long-term reliability. External environments may include exposure to a combination of UV light and temperature, while other environments may expose devices to hydrocarbon based fuels. This paper will delve into the chemistry of silicones and functional groups that lend themselves to properties such as temperature, fuel, and radiation resistance to show shy silicone is the material of choice for optic applications under normally harmful forms of exposure. Data will be presented to examine silicone's performance in these environment.

A theoretical study on the optical properties of black silicon

NASA Astrophysics Data System (ADS)

Ma, Shijun; Liu, Shuang; Xu, Qinwei; Xu, Junwen; Lu, Rongguo; Liu, Yong; Zhong, Zhiyong

2018-03-01

There is a wide application prospect in black silicon, especially in solar cells and photoelectric detectors. For further optimization of black silicon, it is important to study its optical properties. Especially, the influence of the surface nanostructures on these properties and the light propagation within the nanostructures are relevant. In this paper, two kinds of black silicon models are studied via the finite differences time domain method. The simulated reflectance spectra matches well with the measured curve. Also, the light intensity distribution within the nanostructures shows that near 80% of the incident light are redirected and subjected to internal reflection, which provides powerful support for the good light trapping properties of black silicon.

One-step separation and purification of hydrolysable tannins from Geranium wilfordii Maxim by adsorption chromatography on cross-linked 12% agarose gel.

PubMed

Liu, Dan; Ma, Yan; Wang, Ye; Su, Zhiguo; Gu, Ming; Janson, Jan-Christer

2011-05-01

The hydrolysable tannins corilagin and geraniin, the major active components of the traditional Chinese medicine Geranium wilfordii Maxim, have been separated and purified from crude extracts in one step by adsorption chromatography on cross-linked 12% agarose gel (Superose 12 10/300 GL). The separation was achieved by gradient elution using mobile phase A composed of 5% ethanol and 5% acetic acid and mobile phase B composed of 30% ethanol and 30% acetic acid. The gradients were composed as follows: 0-240 mL, 0-25% B; 240-480 mL, 25-40% B; after 480 mL, 100% B. The purities of the collected corilagin and geraniin were 92.4 and 87.2%, and the corresponding yields were 88.0 and 76.8%, respectively. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Rose geranium essential oil as a source of new and safe anti-inflammatory drugs

PubMed Central

Boukhatem, Mohamed Nadjib; Kameli, Abdelkrim; Ferhat, Mohamed Amine; Saidi, Fairouz; Mekarnia, Maamar

2013-01-01

Background Since the available anti-inflammatory drugs exert an extensive variety of side effects, the search for new anti-inflammatory agents has been a priority of pharmaceutical industries. Aims The aim of the present study was to assess the anti-inflammatory activities of the essential oil of rose geranium (RGEO). Methods The chemical composition of the RGEO was investigated by gas chromatography. The major components were citronellol (29.13%), geraniol (12.62%), and citronellyl formate (8.06%). In the carrageenan-induced paw edema, five different groups were established and RGEO was administered orally in three different doses. Results RGEO (100 mg/kg) was able to significantly reduce the paw edema with a comparable effect to that observed with diclofenac, the positive control. In addition, RGEO showed a potent anti-inflammatory activity by topical treatment in the method of croton oil-induced ear edema. When the dose was 5 or 10 µl of RGEO per ear, the inflammation was reduced by 73 and 88%, respectively. This is the first report to demonstrate a significant anti-inflammatory activity of Algerian RGEO. In addition, histological analysis confirmed that RGEO inhibited the inflammatory responses in the skin. Conclusion Our results indicate that RGEO may have significant potential for the development of novel anti-inflammatory drugs with improved safety profile. PMID:24103319

Silicon based mechanic-photonic wavelength converter for infrared photo-detection

NASA Astrophysics Data System (ADS)

Rudnitsky, Arkady; Agdarov, Sergey; Gulitsky, Konstantin; Zalevsky, Zeev

2017-06-01

In this paper we present a new concept to realize a mechanic-photonic wavelength converter in silicon chip by construction of nanorods and by modulating the input illumination at temporal frequency matched to the mechanic resonance of the nanorods. The use case is to realize an infrared photo detector in silicon which is not based on absorption but rather on the mechanical interaction of the nanorods with the incoming illumination.

Micro-miniature gas chromatograph column disposed in silicon wafers

DOEpatents

Yu, Conrad M.

2000-01-01

A micro-miniature gas chromatograph column is fabricated by forming matching halves of a circular cross-section spiral microcapillary in two silicon wafers and then bonding the two wafers together using visual or physical alignment methods. Heating wires are deposited on the outside surfaces of each wafer in a spiral or serpentine pattern large enough in area to cover the whole microcapillary area inside the joined wafers. The visual alignment method includes etching through an alignment window in one wafer and a precision-matching alignment target in the other wafer. The two wafers are then bonded together using the window and target. The physical alignment methods include etching through vertical alignment holes in both wafers and then using pins or posts through corresponding vertical alignment holes to force precision alignment during bonding. The pins or posts may be withdrawn after curing of the bond. Once the wafers are bonded together, a solid phase of very pure silicone is injected in a solution of very pure chloroform into one end of the microcapillary. The chloroform lowers the viscosity of the silicone enough that a high pressure hypodermic needle with a thumbscrew plunger can force the solution into the whole length of the spiral microcapillary. The chloroform is then evaporated out slowly to leave the silicone behind in a deposit.

SiN-assisted polarization-insensitive multicore fiber to silicon photonics interface

NASA Astrophysics Data System (ADS)

Poulopoulos, Giannis N.; Kalavrouziotis, Dimitrios; Mitchell, Paul; Macdonald, John R.; Bakopoulos, Paraskevas; Avramopoulos, Hercules

2015-06-01

We demonstrate a polarization-insensitive coupler interfacing multicore-fiber (MCF) to silicon waveguides. It comprises a 3D glass fanout transforming the circular MCF core-arrangement to linear and performing initial tapering, followed by a Spot-Size-Converter on the silicon chip. Glass waveguides are formed of multiple overlapped modification elements and appropriate offsetting thereof yields tapers with symmetric cross-section. The Spot-Size-Converter is an inverselytapered silicon waveguide with a tapered polymer overcladding where light is initially coupled, whereas phase-matching gradually shifts it towards the silicon core. Co-design of the glass fanout and Spot-Size-Converter obtains theoretical loss below 1dB for the overall Si-to-MCF transition in both polarizations.

From SHG to mid-infrared SPDC generation in strained silicon waveguides

NASA Astrophysics Data System (ADS)

Castellan, Claudio; Trenti, Alessandro; Mancinelli, Mattia; Marchesini, Alessandro; Ghulinyan, Mher; Pucker, Georg; Pavesi, Lorenzo

2017-08-01

The centrosymmetric crystalline structure of Silicon inhibits second order nonlinear optical processes in this material. We report here that, by breaking the silicon symmetry with a stressing silicon nitride over-layer, Second Harmonic Generation (SHG) is obtained in suitably designed waveguides where multi-modal phase-matching is achieved. The modeling of the generated signal provides an effective strain-induced second order nonlinear coefficient of χ(2) = (0.30 +/- 0.02) pm/V. Our work opens also interesting perspectives on the reverse process, the Spontaneous Parametric Down Conversion (SPDC), through which it is possible to generate mid-infrared entangled photon pairs.

Large area sheet task. Advanced dendritic web growth development. [silicon films

NASA Technical Reports Server (NTRS)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Hopkins, R. H.; Meier, D.; Frantti, E.; Schruben, J.

1981-01-01

The development of a silicon dendritic web growth machine is discussed. Several refinements to the sensing and control equipment for melt replenishment during web growth are described and several areas for cost reduction in the components of the prototype automated web growth furnace are identified. A circuit designed to eliminate the sensitivity of the detector signal to the intensity of the reflected laser beam used to measure melt level is also described. A variable speed motor for the silicon feeder is discussed which allows pellet feeding to be accomplished at a rate programmed to match exactly the silicon removed by web growth.

Absence of sex differential plasticity to light availability during seed maturation in Geranium sylvaticum.

PubMed

Varga, Sandra; Laaksonen, Ester; Siikamäki, Pirkko; Kytöviita, Minna-Maarit

2015-01-01

Sex-differential plasticity (SDP) hypothesis suggests that since hermaphrodites gain fitness through both pollen and seed production they may have evolved a higher degree of plasticity in their reproductive strategy compared to females which achieve fitness only through seed production. SDP may explain the difference in seed production observed between sexes in gynodioecious species in response to resource (nutrients or water) availability. In harsh environments, hermaphrodites decrease seed production whereas females keep it relatively similar regardless of the environmental conditions. Light availability can be also a limiting resource and thus could theoretically affect differently female and hermaphrodite seed output even though this ecological factor has been largely overlooked. We tested whether the two sexes in the gynodioecious species Geranium sylvaticum differ in their tolerance to light limitation during seed maturation in the field. We used a fully factorial block experiment exposing female and hermaphrodite plants to two different light environments (control and shade) after their peak flowering period. Specifically, we measured fruit and seed production in response to decreased light availability and compared it between the sexes. Shading reduced the number of fruits and seeds produced, but the decrease was similar between the sexes. Furthermore, shading delayed seed production by three days in both sexes, but did not affect seed mass, seed P content, or the probability of re-flowering the following year. Our results give no evidence for reproductive SDP in response to light during seed maturation.

Broadband moth-eye antireflection coatings on silicon

NASA Astrophysics Data System (ADS)

Sun, Chih-Hung; Jiang, Peng; Jiang, Bin

2008-02-01

We report a bioinspired templating technique for fabricating broadband antireflection coatings that mimic antireflective moth eyes. Wafer-scale, subwavelength-structured nipple arrays are directly patterned on silicon using spin-coated silica colloidal monolayers as etching masks. The templated gratings exhibit excellent broadband antireflection properties and the normal-incidence specular reflection matches with the theoretical prediction using a rigorous coupled-wave analysis (RCWA) model. We further demonstrate that two common simulation methods, RCWA and thin-film multilayer models, generate almost identical prediction for the templated nipple arrays. This simple bottom-up technique is compatible with standard microfabrication, promising for reducing the manufacturing cost of crystalline silicon solar cells.

Singlet fission/silicon solar cell exceeding 100% EQE (Conference Presentation)

NASA Astrophysics Data System (ADS)

Pazos, Luis M.; Lee, Jumin; Kirch, Anton; Tabachnyk, Maxim; Friend, Richard H.; Ehrler, Bruno

2016-09-01

Current matching limits the commercialization of tandem solar cells due to their instability over spectral changes, leading to the need of using solar concentrators and trackers to keep the spectrum stable. We demonstrate that voltage-matched systems show far higher performance over spectral changes; caused by clouds, dust and other variations in atmospheric conditions. Singlet fission is a process in organic semiconductors which has shown very efficient, 200%, down-conversion yield and the generated excitations are long-lived, ideal for solar cells. As a result, the number of publications has grown exponentially in the past 5 years. Yet, so far no one has achieved to combine singlet fission with most low bandgap semiconductors, including crystalline silicon, the dominating solar cell material with a 90% share of the PV Market. Here we show that singlet fission can facilitate the fabrication of voltage-matched systems, opening a simple design route for the effective implementation of down-conversion in commercially available photovoltaic technologies, with no modification of the electronic circuitry of such. The implemention of singlet fission is achieved simply by decoupling the fabrication of the individual subcells. For this demonstration we used an ITO/PEDOT/P3HT/Pentacene/C60/Ag wide-bandgap subcell, and a commercial silicon solar cell as the low-bandgap component. We show that the combination of the two leads to the first tandem silicon solar cell which exceeds 100% external quantum efficiency.

Supercontinuum generation in silicon waveguides relying on wave-breaking.

PubMed

Castelló-Lurbe, David; Silvestre, Enrique

2015-10-05

Four-wave-mixing processes enabled during optical wave-breaking (OWB) are exploited in this paper for supercontinuum generation. Unlike conventional approaches based on OWB, phase-matching is achieved here for these nonlinear interactions, and, consequently, new frequency production becomes more efficient. We take advantage of this kind of pulse propagation to obtain numerically a coherent octave-spanning mid-infrared supercontinuum generation in a silicon waveguide pumping at telecom wavelengths in the normal dispersion regime. This scheme shows a feasible path to overcome limits imposed by two-photon absorption on spectral broadening in silicon waveguides.

Parameter Estimation of a Spiking Silicon Neuron

PubMed Central

Russell, Alexander; Mazurek, Kevin; Mihalaş, Stefan; Niebur, Ernst; Etienne-Cummings, Ralph

2012-01-01

Spiking neuron models are used in a multitude of tasks ranging from understanding neural behavior at its most basic level to neuroprosthetics. Parameter estimation of a single neuron model, such that the model’s output matches that of a biological neuron is an extremely important task. Hand tuning of parameters to obtain such behaviors is a difficult and time consuming process. This is further complicated when the neuron is instantiated in silicon (an attractive medium in which to implement these models) as fabrication imperfections make the task of parameter configuration more complex. In this paper we show two methods to automate the configuration of a silicon (hardware) neuron’s parameters. First, we show how a Maximum Likelihood method can be applied to a leaky integrate and fire silicon neuron with spike induced currents to fit the neuron’s output to desired spike times. We then show how a distance based method which approximates the negative log likelihood of the lognormal distribution can also be used to tune the neuron’s parameters. We conclude that the distance based method is better suited for parameter configuration of silicon neurons due to its superior optimization speed. PMID:23852978

Security and matching of partial fingerprint recognition systems

NASA Astrophysics Data System (ADS)

Jea, Tsai-Yang; Chavan, Viraj S.; Govindaraju, Venu; Schneider, John K.

2004-08-01

Despite advances in fingerprint identification techniques, matching incomplete or partial fingerprints still poses a difficult challenge. While the introduction of compact silicon chip-based sensors that capture only a part of the fingerprint area have made this problem important from a commercial perspective, there is also considerable interest on the topic for processing partial and latent fingerprints obtained at crime scenes. Attempts to match partial fingerprints using singular ridge structures-based alignment techniques fail when the partial print does not include such structures (e.g., core or delta). We present a multi-path fingerprint matching approach that utilizes localized secondary features derived using only the relative information of minutiae. Since the minutia-based fingerprint representation, is an ANSI-NIST standard, our approach has the advantage of being directly applicable to already existing databases. We also analyze the vulnerability of partial fingerprint identification systems to brute force attacks. The described matching approach has been tested on one of FVC2002"s DB1 database11. The experimental results show that our approach achieves an equal error rate of 1.25% and a total error rate of 1.8% (with FAR at 0.2% and FRR at 1.6%).

Thick-film materials for silicon photovoltaic cell manufacture

NASA Technical Reports Server (NTRS)

Field, M. B.

1977-01-01

Thick film technology is applicable to three areas of silicon solar cell fabrication; metallization, junction formation, and coating for protection of screened ohmic contacts, particularly wrap around contacts, interconnection and environmental protection. Both material and process parameters were investigated. Printed ohmic contacts on n- and p-type silicon are very sensitive to the processing parameters of firing time, temperature, and atmosphere. Wrap around contacts are easily achieved by first printing and firing a dielectric over the edge and subsequently applying a low firing temperature conductor. Interconnection of cells into arrays can be achieved by printing and cofiring thick film metal pastes, soldering, or with heat curing conductive epoxies on low cost substrates. Printed (thick) film vitreous protection coatings do not yet offer sufficient optical uniformity and transparency for use on silicon. A sprayed, heat curable SiO2 based resin shows promise of providing both optical matching and environmental protection.

Electrodeposition at room temperature of amorphous silicon and germanium nanowires in ionic liquid

NASA Astrophysics Data System (ADS)

Martineau, F.; Namur, K.; Mallet, J.; Delavoie, F.; Endres, F.; Troyon, M.; Molinari, M.

2009-11-01

The electrodeposition at room temperature of silicon and germanium nanowires from the air- and water-stable ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide (P1,4) containing SiCl4 as Si source or GeCl4 as Ge source is investigated by cyclic voltammetry. By using nanoporous polycarbonate membranes as templates, it is possible to reproducibly grow pure silicon and germanium nanowires of different diameters. The nanowires are composed of pure amorphous silicon or germanium. The nanowires have homogeneous cylindrical shape with a roughness of a few nanometres on the wire surfaces. The nanowires' diameters and lengths well match with the initial membrane characteristics. Preliminary photoluminescence experiments exhibit strong emission in the near infrared for the amorphous silicon nanowires.

Frequency-dependent pollinator discrimination acts against female plants in the gynodioecious Geranium maculatum.

PubMed

Van Etten, Megan L; Chang, Shu-Mei

2014-12-01

Gynodioecy, the co-occurrence of female and hermaphroditic individuals, is thought to be an intermediate step between hermaphroditism and separate sexes, a major transition in flowering plants. Because retaining females in a population requires that they have increased seed fitness (to compensate for the lack of pollen fitness), factors that affect seed fitness are of great importance to the evolution of this mating system and have often been studied. However, factors negatively affecting female fitness are equally important and have been largely neglected. One such factor stems from female flowers being less attractive to insects than hermaphrodite flowers, thereby decreasing their relative fitness. To test the severity and consequences of this type of pollinator discrimination in Geranium maculatum, experimental populations with the range of sex ratios observed in nature were created, ranging from 13 % to 42 % females. Pollinators were observed in order to measure the strength of discrimination, and pollen deposition and seed production of both sexes were measured to determine the fitness consequences of this discrimination. Additionally a comparison was made across the sex ratios to determine whether discrimination was frequency-dependent. It was found that female flowers, on average, were visited at half of the rate of hermaphrodite flowers, which decreased their pollen receipt and seed production. Additionally, females were most discriminated against when rare, due to both changes in the pollinators' behaviour and a shift in pollinator composition. The results suggest that pollinator discrimination negatively affects females' relative fitness when they are rare. Thus, the initial spread of females in a population, the first step in the evolution of gynodioecy, may be made more difficult due to pollinator discrimination. © The Author 2014. Published by Oxford University Press on behalf of the Annals of Botany Company. All rights reserved. For Permissions

Separation and purification of hydrolyzable tannin from Geranium wilfordii Maxim by reversed-phase and normal-phase high-speed counter-current chromatography.

PubMed

Liu, Dan; Su, Zhiguo; Wang, Changhai; Gu, Ming; Xing, Siliang

2010-08-01

Three hydrolyzable tannins, geraniin, corilagin and gallic acid, main active components of Geranium wilfordii Maxim, have been separated and purified in one-step by both reversed-phase and normal-phase high-speed counter-current chromatography. Gallic acid, corilagin and geraniin were purified from 70% aqueous acetone extract of G. wilfordii Maxim with solvent system n-hexane-ethyl acetate-methanol-acetic acid-water (1:10:0.2:0.2:20) by reversed-phase high-speed counter-current chromatography at purities of 94.2, 91.0 and 91.3%, at yields of 89.3, 82.9 and 91.7%, respectively. Gallic acid, corilagin and geraniin were purified with solvent system n-hexane-ethyl acetate-methanol-acetic acid-water (0.2:10:2:1:5) by normal-phase high-speed counter-current chromatography at purities of 85.9, 92.2 and 87.6%, at yields of 87.4, 94.6 and 94.3%, respectively. It was successful for both reversed-phase and normal-phase high-speed counter-current chromatography to separate high-polarity of low-molecular-weight substances.

Spin-split silicon states at step edges of Si(553)-Au

NASA Astrophysics Data System (ADS)

Biedermann, K.; Regensburger, S.; Fauster, Th.; Himpsel, F. J.; Erwin, S. C.

2012-06-01

The quasi-one-dimensional Si(553)-Au surface is investigated with time-resolved two-photon photoemission and laser-based photoemission. Several occupied and unoccupied states inside and outside the bulk band gap of silicon were found near the center of the surface Brillouin zone. A nondispersing unoccupied state 0.62 eV above the Fermi level with a lifetime of 125 fs matches the spin-split silicon step-edge state predicted by density functional theory calculations. Two occupied bands can be associated with the bands calculated for nonpolarized step-edge atoms.

Identification of anti-inflammatory fractions of Geranium wilfordii using tumor necrosis factor-alpha as a drug target on Herbochip® - an array-based high throughput screening platform.

PubMed

Huang, Min; Yao, Pei-Wun; Chang, Margaret Dah-Tysr; Ng, Sim-Kun; Yu, Chien-Hui; Zhang, Yun-Feng; Wen, Meng-Liang; Yang, Xiao-Yuan; Lai, Yiu-Kay

2015-05-12

Geranium wilfordii is one of the major species used as Herba Geranii (lao-guan-cao) in China, it is commonly used solely or in polyherbal formulations for treatment of joint pain resulted from rheumatoid arthritis (RA) and gout. This herb is used to validate a target-based drug screening platform called Herbochip® and evaluate anti-inflammatory effects of Geranium wilfordii ethanolic extract (GWE) using tumor necrosis factor-alpha (TNF-α) as a drug target together with subsequent in vitro and in vivo assays. A microarray-based drug screening platform was constructed by arraying HPLC fractions of herbal extracts onto a surface-activated polystyrene slide (Herbochip®). Using TNF-α as a molecular probe, fractions of 82 selected herbal extracts, including GWE, were then screened to identify plant extracts containing TNF-α-binding agents. Cytotoxicity of GWE and modulatory effects of GWE on TNF-α expression were evaluated by cell-based assays using TNF-α sensitive murine fibrosarcoma L929 cells as an in vitro model. The in vivo anti-inflammatory effects of GWE were further assessed by animal models including carrageenan-induced hind paw edema in rats and xylene-induced ear edema in mice, in comparison with aspirin. The hybridization data obtained by Herbochip® analysis showed unambiguous signals which confirmed TNF-α binding activity in 46 herbal extracts including GWE. In L929 cells GWE showed significant inhibitory effect on TNF-α expression with negligible cytotoxicity. GWE also significantly inhibited formation of carrageenan-induced hind paw edema and xylene-induced ear edema in animal models, indicating that it indeed possessed anti-inflammatory activity. We have thus validated effectiveness of the Herbochip® drug screening platform using TNF-α as a molecular target. Subsequent experiments on GWE lead us to conclude that the anti-RA activity of GWE can be attributed to inhibitory effect of GWE on the key inflammatory factor, TNF-α. Our results

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source.

PubMed

Steidle, Jeffrey A; Fanto, Michael L; Preble, Stefan F; Tison, Christopher C; Howland, Gregory A; Wang, Zihao; Alsing, Paul M

2017-04-04

Silicon photonic chips have the potential to realize complex integrated quantum information processing circuits, including photon sources, qubit manipulation, and integrated single-photon detectors. Here, we present the key aspects of preparing and testing a silicon photonic quantum chip with an integrated photon source and two-photon interferometer. The most important aspect of an integrated quantum circuit is minimizing loss so that all of the generated photons are detected with the highest possible fidelity. Here, we describe how to perform low-loss edge coupling by using an ultra-high numerical aperture fiber to closely match the mode of the silicon waveguides. By using an optimized fusion splicing recipe, the UHNA fiber is seamlessly interfaced with a standard single-mode fiber. This low-loss coupling allows the measurement of high-fidelity photon production in an integrated silicon ring resonator and the subsequent two-photon interference of the produced photons in a closely integrated Mach-Zehnder interferometer. This paper describes the essential procedures for the preparation and characterization of high-performance and scalable silicon quantum photonic circuits.

Substrate for thin silicon solar cells

DOEpatents

Ciszek, Theodore F.

1995-01-01

A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1.times.10.sup.-3 ohm-cm.

Silicon nitride/silicon carbide composite powders

DOEpatents

Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

1996-06-11

Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

Gluing silicon with silicone

NASA Astrophysics Data System (ADS)

Abt, I.; Fox, H.; Moshous, B.; Richter, R. H.; Riechmann, K.; Rietz, M.; Riedl, J.; Denis, R. St; Wagner, W.

1998-02-01

Problems and solutions concerning the gluing of silicon detectors are discussed. The R & D work for the HERA- B vertex detector system led to gluing studies with epoxy and silicone-based adhesives used on ceramics and carbon fibre. The HERA- B solution using a silicone glue is presented.

Dual exposure, two-photon, conformal phasemask lithography for three dimensional silicon inverse woodpile photonic crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shir, Daniel J.; Nelson, Erik C.; Chanda, Debashis

2010-01-01

The authors describe the fabrication and characterization of three dimensional silicon inverse woodpile photonic crystals. A dual exposure, two-photon, conformal phasemask technique is used to create high quality polymer woodpile structures over large areas with geometries that quantitatively match expectations based on optical simulations. Depositing silicon into these templates followed by the removal of the polymer results in silicon inverse woodpile photonic crystals for which calculations indicate a wide, complete photonic bandgap over a range of structural fill fractions. Spectroscopic measurements of normal incidence reflection from both the polymer and siliconphotonic crystals reveal good optical properties.

Substrate for thin silicon solar cells

DOEpatents

Ciszek, T.F.

1995-03-28

A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1{times}10{sup {minus}3} ohm-cm. 4 figures.

Method and apparatus for stable silicon dioxide layers on silicon grown in silicon nitride ambient

NASA Technical Reports Server (NTRS)

Cohen, R. A.; Wheeler, R. K. (Inventor)

1974-01-01

A method and apparatus for thermally growing stable silicon dioxide layers on silicon is disclosed. A previously etched and baked silicon nitride tube placed in a furnace is used to grow the silicon dioxide. First, pure oxygen is allowed to flow through the tube to initially coat the inside surface of the tube with a thin layer of silicon dioxide. After the tube is coated with the thin layer of silicon dioxide, the silicon is oxidized thermally in a normal fashion. If the tube becomes contaminated, the silicon dioxide is etched off thereby exposing clean silicon nitride and then the inside of the tube is recoated with silicon dioxide. As is disclosed, the silicon nitride tube can also be used as the ambient for the pyrolytic decomposition of silane and ammonia to form thin layers of clean silicon nitride.

Biophysical studies of interaction between hydrolysable tannins isolated from Oenothera gigas and Geranium sanguineum with human serum albumin.

PubMed

Sekowski, Szymon; Ionov, Maksim; Kaszuba, Mateusz; Mavlyanov, Saidmukhtar; Bryszewska, Maria; Zamaraeva, Maria

2014-11-01

Tannins, secondary plant metabolites, possess diverse biological activities and can interact with biopolymers such as lipids or proteins. Interactions between tannins and proteins depend on the structures of both and can result in changes in protein structure and activity. Because human serum albumin is the most abundant protein in plasma and responsible for interactions with important biological compounds (e.g. bilirubin) and proper blood pressure, therefore, it is very important to investigate reactions between HSA and tannins. This paper describes the interaction between human serum albumin (HSA) and two tannins: bihexahydroxydiphenoyl-trigalloylglucose (BDTG) and 1-O-galloyl-4,6-hexahydroxydiphenoyl-β-d-glucose (OGβDG), isolated from Geranium sanguineum and Oenothera gigas leafs, respectively. Optical (spectrofluorimetric) and chiral optical (circular dichroism) methods were used in this study. Fluorescence analysis demonstrated that OGβDG quenched HSA fluorescence more strongly than BDTG. Both OGβDG and BDTG formed complexes with albumin and caused a red shift of the fluorescence spectra but did not significantly change the protein secondary structure. Our studies clearly demonstrate that the tested tannins interact very strongly with human serum albumin (quenching constant K=88,277.26±407.04 M(-1) and K=55,552.67±583.07 M(-1) respectively for OGβDG and BDTG) in a manner depending on their chemical structure. Copyright © 2014 Elsevier B.V. All rights reserved.

Lithography-free fabrication of silicon nanowire and nanohole arrays by metal-assisted chemical etching

PubMed Central

2013-01-01

We demonstrated a novel, simple, and low-cost method to fabricate silicon nanowire (SiNW) arrays and silicon nanohole (SiNH) arrays based on thin silver (Ag) film dewetting process combined with metal-assisted chemical etching. Ag mesh with holes and semispherical Ag nanoparticles can be prepared by simple thermal annealing of Ag thin film on a silicon substrate. Both the diameter and the distribution of mesh holes as well as the nanoparticles can be manipulated by the film thickness and the annealing temperature. The silicon underneath Ag coverage was etched off with the catalysis of metal in an aqueous solution containing HF and an oxidant, which form silicon nanostructures (either SiNW or SiNH arrays). The morphologies of the corresponding etched SiNW and SiNH arrays matched well with that of Ag holes and nanoparticles. This novel method allows lithography-free fabrication of the SiNW and SiNH arrays with control of the size and distribution. PMID:23557325

Photonic crystal enhanced silicon cell based thermophotovoltaic systems

DOE PAGES

Yeng, Yi Xiang; Chan, Walker R.; Rinnerbauer, Veronika; ...

2015-01-30

We report the design, optimization, and experimental results of large area commercial silicon solar cell based thermophotovoltaic (TPV) energy conversion systems. Using global non-linear optimization tools, we demonstrate theoretically a maximum radiative heat-to-electricity efficiency of 6.4% and a corresponding output electrical power density of 0.39 W cm⁻² at temperature T = 1660 K when implementing both the optimized two-dimensional (2D) tantalum photonic crystal (PhC) selective emitter, and the optimized 1D tantalum pentoxide – silicon dioxide PhC cold-side selective filter. In addition, we have developed an experimental large area TPV test setup that enables accurate measurement of radiative heat-to-electricity efficiency formore » any emitter-filter-TPV cell combination of interest. In fact, the experimental results match extremely well with predictions of our numerical models. Our experimental setup achieved a maximum output electrical power density of 0.10W cm⁻² and radiative heat-to-electricity efficiency of 1.18% at T = 1380 K using commercial wafer size back-contacted silicon solar cells.« less

Variable mycorrhizal benefits on the reproductive output of Geranium sylvaticum, with special emphasis on the intermediate phenotype.

PubMed

Varga, S; Kytöviita, M-M

2014-03-01

In several gynodioecious species, intermediate sex between female and hermaphrodite has been reported, but few studies have investigated fitness parameters of this intermediate phenotype. Here, we examined the interactions between plant sex and arbuscular mycorrhizal (AM) fungal species affecting the reproductive output of Geranium sylvaticum, a sexually polymorphic plant species with frequent intermediate sexes between females and hermaphrodites, using a common garden experiment. Flowering phenology, AM colonisation levels and several plant vegetative and reproductive parameters, including seed and pollen production, were measured. Differences among sexes were detected in flowering, fruit set, pollen production and floral size. The two AM species used in the present work had different effects on plant fitness parameters. One AM species increased female fitness through increasing seed number and seed mass, while the other species reduced seed mass in all sexes investigated. AM fungi did not affect intermediate and hermaphrodite pollen content in anthers. The three sexes in G. sylvaticum did not differ in their reproductive output in terms of total seed production, but hermaphrodites had potentially larger fathering ability than intermediates due to higher anther number. The ultimate female function--seed production--did not differ among the sexes, but one of the AM fungi used potentially decreased host plant fitness. In addition, in the intermediate sex, mycorrhizal symbiosis functioned similarly in females as in hermaphrodites. © 2013 German Botanical Society and The Royal Botanical Society of the Netherlands.

Compact polarization beam splitter for silicon photonic integrated circuits with a 340-nm-thick silicon core layer.

PubMed

Li, Chenlei; Dai, Daoxin

2017-11-01

A polarization beam splitter (PBS) is proposed and realized for silicon photonic integrated circuits with a 340-nm-thick silicon core layer by introducing an asymmetric directional coupler (ADC), which consists of a silicon-on-insulator (SOI) nanowire and a subwavelength grating (SWG) waveguide. The SWG is introduced to provide an optical waveguide which has much higher birefringence than a regular 340-nm-thick SOI nanowire, so that it is possible to make the phase-matching condition satisfied for TE polarization only in the present design when the waveguide dimensions are optimized. Meanwhile, there is a significant phase mismatching for TM polarization automatically. In this way, the present ADC enables strong polarization selectivity to realize a PBS that separates TE and TM polarizations to the cross and through ports, respectively. The realized PBS has a length of ∼2  μm for the coupling region. For the fabricated PBS, the extinction ratio (ER) is 15-30 dB and the excess loss is 0.2-2.6 dB for TE polarization while the ER is 20-27 dB and the excess loss is 0.3-2.8 dB for TM polarization when operating in the wavelength range of 1520-1580 nm.

Silicon surface passivation by silicon nitride deposition

NASA Technical Reports Server (NTRS)

Olsen, L. C.

1984-01-01

Silicon nitride deposition was studied as a method of passivation for silicon solar cell surfaces. The following three objectives were the thrust of the research: (1) the use of pecvd silicon nitride for passivation of silicon surfaces; (2) measurement techniques for surface recombination velocity; and (3) the importance of surface passivation to high efficiency solar cells.

Guided ultrasonic wave beam skew in silicon wafers

NASA Astrophysics Data System (ADS)

Pizzolato, Marco; Masserey, Bernard; Robyr, Jean-Luc; Fromme, Paul

2018-04-01

In the photovoltaic industry, monocrystalline silicon wafers are employed for solar cells with high conversion efficiency. Micro-cracks induced by the cutting process in the thin wafers can lead to brittle wafer fracture. Guided ultrasonic waves would offer an efficient methodology for the in-process non-destructive testing of wafers to assess micro-crack density. The material anisotropy of the monocrystalline silicon leads to variations of the guided wave characteristics, depending on the propagation direction relative to the crystal orientation. Selective guided ultrasonic wave excitation was achieved using a contact piezoelectric transducer with custom-made wedges for the A0 and S0 Lamb wave modes and a transducer holder to achieve controlled contact pressure and orientation. The out-of-plane component of the guided wave propagation was measured using a non-contact laser interferometer. The phase slowness (velocity) of the two fundamental Lamb wave modes was measured experimentally for varying propagation directions relative to the crystal orientation and found to match theoretical predictions. Significant wave beam skew was observed experimentally, especially for the S0 mode, and investigated from 3D finite element simulations. Good agreement was found with the theoretical predictions based on nominal material properties of the silicon wafer. The important contribution of guided wave beam skewing effects for the non-destructive testing of silicon wafers was demonstrated.

Large-aperture Wide-bandwidth Antireflection-coated Silicon Lenses for Millimeter Wavelengths

NASA Technical Reports Server (NTRS)

Datta, R.; Munson, C. D.; Niemack, M. D.; McMahon, J. J.; Britton, J.; Wollack, Edward J.; Beall, J.; Devlin, M. J.; Fowler, J.; Gallardo, P.;

High-directionality fiber-chip grating coupler with interleaved trenches and subwavelength index-matching structure.

PubMed

Benedikovic, Daniel; Alonso-Ramos, Carlos; Cheben, Pavel; Schmid, Jens H; Wang, Shurui; Xu, Dan-Xia; Lapointe, Jean; Janz, Siegfried; Halir, Robert; Ortega-Moñux, Alejandro; Wangüemert-Pérez, J Gonzalo; Molina-Fernández, Iñigo; Fédéli, Jean-Marc; Vivien, Laurent; Dado, Milan

2015-09-15

We present the first experimental demonstration of a new fiber-chip grating coupler concept that exploits the blazing effect by interleaving the standard full (220 nm) and shallow etch (70 nm) trenches in a 220 nm thick silicon layer. The high directionality is obtained by controlling the separation between the deep and shallow trenches to achieve constructive interference in the upward direction and destructive interference toward the silicon substrate. Utilizing this concept, the grating directionality can be maximized independent of the bottom oxide thickness. The coupler also includes a subwavelength-engineered index-matching region, designed to reduce the reflectivity at the interface between the injection waveguide and the grating. We report a measured fiber-chip coupling efficiency of -1.3  dB, the highest coupling efficiency achieved to date for a surface grating coupler in a 220 nm silicon-on-insulator platform fabricated in a conventional dual-etch process without high-index overlays or bottom mirrors.

Method for producing silicon nitride/silicon carbide composite

DOEpatents

Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

1996-07-23

Silicon carbide/silicon nitride composites are prepared by carbothermal reduction of crystalline silica powder, carbon powder and optionally crsytalline silicon nitride powder. The crystalline silicon carbide portion of the composite has a mean number diameter less than about 700 nanometers and contains nitrogen.

Silicone metalization

DOEpatents

Maghribi, Mariam N [Livermore, CA; Krulevitch, Peter [Pleasanton, CA; Hamilton, Julie [Tracy, CA

2006-12-05

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Silicone metalization

DOEpatents

Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

2008-12-09

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

NASA Astrophysics Data System (ADS)

Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

2018-03-01

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

Multifunctional Silicon Optoelectronics Integrated with Plasmonic Scattering Color.

PubMed

Wen, Long; Chen, Qin; Hu, Xin; Wang, Huacun; Jin, Lin; Su, Qiang

2016-12-27

Plasmonic scattering from metallic nanoparticles has been used for centuries to create the colorful appearance of stained glass. Besides their use as passive spectral filtering components, multifunctional optoelectronic applications can be achieved by integrating the nanoscatters with semiconductors that generate electricity using the complementary spectral components of plasmonic colors. To suppress the usual degradation of both efficiency and the gamut of plasmonic scattering coloration in highly asymmetric index configurations like a silicon host, aluminum nanodisks on indium tin oxide (ITO) coated silicon were experimentally studied and demonstrated color sorting in the full visible range along with photocurrent generation. Interestingly, the photocurrents were found to be comparable to the reference devices with only antireflection coatings in spite of the power loss for coloration. Detailed investigation shows that ITO serves as both the impedance matching layer for promoting the backward scattering and schottky contact with silicon, and moreover, plasmonic nanoscatters efficiently harvest the complement spectrum components for charge generation. The present approach combines the capacities of nanoscale color sorting and photoelectric converting at a negligible cost of efficiency, thus providing a broad flexibility of being utilized in various optoelectronic applications including self-powered display, filter-free imaging, and colorful photovoltaics.

The effect of material matching on the stress-induced power degradation for light-redirecting-ribbon-based silicon photovoltaic modules

NASA Astrophysics Data System (ADS)

Gou, X. F.; Zhuang, H.; Zhu, J.; Li, X. Y.

2018-01-01

Light redirecting ribbons (LRR) have recently been adopted in crystalline silicon modules in PV industry. The introduction of this LRR may bring additional stress at the boundary of the busbar/wafer contact, which may probably lead to higher power loss after aging. The thermal cycle and electroluminescence (EL) test are employed in this work to investigate this stress-induced power degradation for LRR-based crystalline silicon modules. The obtained results demonstrate that with increase in the thickness of the EVA encapsulant or the decrease in the thickness of the LRR, the power degradation induced by stress can be effectively diminished.

Dipole-allowed direct band gap silicon superlattices

PubMed Central

Oh, Young Jun; Lee, In-Ho; Kim, Sunghyun; Lee, Jooyoung; Chang, Kee Joo

2015-01-01

Silicon is the most popular material used in electronic devices. However, its poor optical properties owing to its indirect band gap nature limit its usage in optoelectronic devices. Here we present the discovery of super-stable pure-silicon superlattice structures that can serve as promising materials for solar cell applications and can lead to the realization of pure Si-based optoelectronic devices. The structures are almost identical to that of bulk Si except that defective layers are intercalated in the diamond lattice. The superlattices exhibit dipole-allowed direct band gaps as well as indirect band gaps, providing ideal conditions for the investigation of a direct-to-indirect band gap transition. The fact that almost all structural portions of the superlattices originate from bulk Si warrants their stability and good lattice matching with bulk Si. Through first-principles molecular dynamics simulations, we confirmed their thermal stability and propose a possible method to synthesize the defective layer through wafer bonding. PMID:26656482

Shock compression of [001] single crystal silicon

NASA Astrophysics Data System (ADS)

Zhao, S.; Hahn, E. N.; Kad, B.; Remington, B. A.; Bringa, E. M.; Meyers, M. A.

2016-05-01

Silicon is ubiquitous in our advanced technological society, yet our current understanding of change to its mechanical response at extreme pressures and strain-rates is far from complete. This is due to its brittleness, making recovery experiments difficult. High-power, short-duration, laser-driven, shock compression and recovery experiments on [001] silicon (using impedance-matched momentum traps) unveiled remarkable structural changes observed by transmission electron microscopy. As laser energy increases, corresponding to an increase in peak shock pressure, the following plastic responses are are observed: surface cleavage along {111} planes, dislocations and stacking faults; bands of amorphized material initially forming on crystallographic orientations consistent with dislocation slip; and coarse regions of amorphized material. Molecular dynamics simulations approach equivalent length and time scales to laser experiments and reveal the evolution of shock-induced partial dislocations and their crucial role in the preliminary stages of amorphization. Application of coupled hydrostatic and shear stresses produce amorphization below the hydrostatically determined critical melting pressure under dynamic shock compression.

Fabrication and characterization of physically defined quantum dots on a boron-doped silicon-on-insulator substrate

NASA Astrophysics Data System (ADS)

Mizoguchi, Seiya; Shimatani, Naoki; Kobayashi, Mizuki; Makino, Takaomi; Yamaoka, Yu; Kodera, Tetsuo

2018-04-01

We study hole transport properties in physically defined p-type silicon quantum dots (QDs) on a heavily doped silicon-on-insulator (SOI) substrate. We observe Coulomb diamonds using single QDs and estimate the charging energy as ∼1.6 meV. We obtain the charge stability diagram of double QDs using single QDs as a charge sensor. This is the first demonstration of charge sensing in p-type heavily doped silicon QDs. For future time-resolved measurements, we apply radio-frequency reflectometry using impedance matching of LC circuits to the device. We observe the resonance and estimate the capacitance as ∼0.12 pF from the resonant frequency. This value is smaller than that of the devices with top gates on nondoped SOI substrate. This indicates that high-frequency signals can be applied efficiently to p-type silicon QDs without top gates.

Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers

DOEpatents

Norman, Andrew

2016-08-23

A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a silicon substrate using a compliant buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The compliant buffer material and semiconductor materials may be deposited using coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The coincident site lattice matching epitaxial process, as well as the use of a ductile buffer material, reduce the internal stresses and associated crystal defects within the deposited semiconductor materials fabricated using the disclosed method. As a result, the semiconductor devices provided herein possess enhanced performance characteristics due to a relatively low density of crystal defects.

Integrated amorphous silicon-aluminum long-range surface plasmon polariton (LR-SPP) waveguides

NASA Astrophysics Data System (ADS)

Sturlesi, Boaz; Grajower, Meir; Mazurski, Noa; Levy, Uriel

2018-03-01

We demonstrate the design, fabrication, and experimental characterization of a long range surface plasmon polariton waveguide that is compatible with complementary metal-oxide semiconductor backend technology. The structure consists of a thin aluminum strip embedded in amorphous silicon. This configuration offers a symmetric environment in which surface plasmon polariton modes undergo minimal loss. Furthermore, the plasmonic mode profile matches the modes of the dielectric (amorphous silicon) waveguide, thus allowing efficient coupling between silicon photonics and plasmonic platforms. The propagation length of the plasmonic waveguide was measured to be about 27 μm at the telecom wavelength around 1550 nm, in good agreement with numerical simulations. As such, the waveguide features both tight mode confinement and decent propagation length. On top of its photonic properties, placing a metal within the structure may also allow for additional functionalities such as photo-detection, thermo-optic tuning, and electro-optic control to be implemented.

Multifunctional epitaxial systems on silicon substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singamaneni, Srinivasa Rao, E-mail: ssingam@ncsu.edu; Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709; Department of Physics, The University of Texas at El Paso, El Paso, Texas 79968

2016-09-15

Multifunctional heterostructures can exhibit a wide range of functional properties, including colossal magneto-resistance, magnetocaloric, and multiferroic behavior, and can display interesting physical phenomena including spin and charge ordering and strong spin-orbit coupling. However, putting this functionality to work remains a challenge. To date, most of the work reported in the literature has dealt with heterostructures deposited onto closely lattice matched insulating substrates such as DyScO{sub 3}, SrTiO{sub 3} (STO), or STO buffered Si(100) using concepts of lattice matching epitaxy (LME). However, strain in heterostructures grown by LME is typically not fully relaxed and the layers contain detrimental defects such asmore » threading dislocations that can significantly degrade the physical properties of the films and adversely affect the device characteristics. In addition, most of the substrates are incompatible with existing CMOS-based technology, where Si (100) substrates dominate. This review discusses recent advances in the integration of multifunctional oxide and non-oxide materials onto silicon substrates. An alternative thin film growth approach, called “domain matching epitaxy,” is presented which identifies approaches for minimizing lattice strain and unwanted defects in large misfit systems (7%–25% and higher). This approach broadly allows for the integration of multifunctional materials onto silicon substrates, such that sensing, computation, and response functions can be combined to produce next generation “smart” devices. In general, pulsed laser deposition has been used to epitaxially grow these materials, although the concepts developed here can be extended to other deposition techniques, as well. It will be shown that TiN and yttria-stabilized zirconia template layers provide promising platforms for the integration of new functionality into silicon-based computer chips. This review paper reports on a number of thin

Large-Aperture Wide-Bandwidth Anti-Reflection-Coated Silicon Lenses for Millimeter Wavelengths

NASA Technical Reports Server (NTRS)

Datta, R.; Munson, C. D.; Niemack, M. D.; McMahon, J. J.; Britton, J.; Wollack, E. J.; Beall, J.; Devlin, M. J.; Fowler, J.; Gallardo, P.;

Systematic analysis of CMOS-micromachined inductors with application to mixer matching circuits

NASA Astrophysics Data System (ADS)

Wu, Jerry Chun-Li

The growing demand for consumer voice and data communication systems and military communication applications has created a need for low-power, low-cost, high-performance radio-frequency (RF) front-end. To achieve this goal, bringing passive components, especially inductors, to silicon is imperative. On-chip passive components such as inductors and capacitors generally enhance the reliability and efficiency of silicon-integrated RF cells. They can provide circuit solutions with superior performance and contribute to a higher level of integration. With passive components on chip, there is a great opportunity to have transformers, filters, and matching networks on chip. However, inductors on silicon have a low quality factor (Q) due to both substrate and metal loss. This dissertation demonstrates the systematic analysis of inductors fabricated using standard complementary metal-oxide-semiconductor (CMOS) and micro-electro-mechanical (MEMS) system technologies. We report system-on-chip inductor modeling, simulation, and measurements of effective inductance and quality factors. In this analysis methodology, a number of systematic simulations are performed on regular and micromachined inductors with different parameters such as spiral topology, number of turns, outer diameter, thickness, and percentage of substrate removed by using micromachining technologies. Three different novel support structures of the micromachined spiral inductor are proposed, analyzed, and implemented for larger size suspended inductors. The sensitivity of the structure support and different degree of substrate etching by post-processing is illustrated. The results provide guidelines for the selection of inductor parameters, post-processing methodologies, and its spiral supports to meet the RF design specifications and the stability requirements for mobile communication. The proposed CMOS-micromachined inductor is used in a low cost-effective double-balanced Gilbert mixer with on-chip matching

Carrier-transport mechanism of Er-silicide Schottky contacts to strained-silicon-on-insulator and silicon-on-insulator.

PubMed

Jyothi, I; Janardhanam, V; Kang, Min-Sung; Yun, Hyung-Joong; Lee, Jouhahn; Choi, Chel-Jong

2014-11-01

The current-voltage characteristics and the carrier-transport mechanism of the Er-silicide (ErSi1.7) Schottky contacts to strained-silicon-on-insulator (sSOI) and silicon-on-insulator (SOI) were investigated. Barrier heights of 0.74 eV and 0.82 eV were obtained for the sSOI and SOI structures, respectively. The barrier height of the sSOI structure was observed to be lower than that of the SoI structure despite the formation of a Schottky contact using the same metal silicide. The sSOI structure exhibited better rectification and higher current level than the SOI structure, which could be associated with a reduction in the band gap of Si caused by strain. The generation-recombination mechanism was found to be dominant in the forward bias for both structures. Carrier generation along with the Poole-Frenkel mechanism dominated the reverse-biased current in the SOI structure. The saturation tendency of the reverse leakage current in the sSOI structure could be attributed to strain-induced defects at the interface in non-lattice-matched structures.

Production of electronic grade lunar silicon by disproportionation of silicon difluoride

NASA Technical Reports Server (NTRS)

Agosto, William N.

1993-01-01

Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

Temperature gradient measurements by using thermoelectric effect in CNTs-silicone adhesive composite.

PubMed

Chani, Muhammad Tariq Saeed; Karimov, Kh S; Asiri, Abdullah M; Ahmed, Nisar; Bashir, Muhammad Mehran; Khan, Sher Bahadar; Rub, Malik Abdul; Azum, Naved

2014-01-01

This work presents the fabrication and investigation of thermoelectric cells based on composite of carbon nanotubes (CNT) and silicone adhesive. The composite contains CNT and silicon adhesive 1∶1 by weight. The current-voltage characteristics and dependences of voltage, current and Seebeck coefficient on the temperature gradient of cell were studied. It was observed that with increase in temperature gradient the open circuit voltage, short circuit current and the Seebeck coefficient of the cells increase. Approximately 7 times increase in temperature gradient increases the open circuit voltage and short circuit current up to 40 and 5 times, respectively. The simulation of experimental results is also carried out; the simulated results are well matched with experimental results.

Temperature Gradient Measurements by Using Thermoelectric Effect in CNTs-Silicone Adhesive Composite

PubMed Central

Chani, Muhammad Tariq Saeed; Karimov, Kh. S.; Asiri, Abdullah M.; Ahmed, Nisar; Bashir, Muhammad Mehran; Khan, Sher Bahadar; Rub, Malik Abdul; Azum, Naved

2014-01-01

This work presents the fabrication and investigation of thermoelectric cells based on composite of carbon nanotubes (CNT) and silicone adhesive. The composite contains CNT and silicon adhesive 1∶1 by weight. The current-voltage characteristics and dependences of voltage, current and Seebeck coefficient on the temperature gradient of cell were studied. It was observed that with increase in temperature gradient the open circuit voltage, short circuit current and the Seebeck coefficient of the cells increase. Approximately 7 times increase in temperature gradient increases the open circuit voltage and short circuit current up to 40 and 5 times, respectively. The simulation of experimental results is also carried out; the simulated results are well matched with experimental results. PMID:24748375

Fabrication and stabilization of silicon-based photonic crystals with tuned morphology for multi-band optical filtering

NASA Astrophysics Data System (ADS)

Salem, Mohamed Shaker; Abdelaleem, Asmaa Mohamed; El-Gamal, Abear Abdullah; Amin, Mohamed

2017-01-01

One-dimensional silicon-based photonic crystals are formed by the electrochemical anodization of silicon substrates in hydrofluoric acid-based solution using an appropriate current density profile. In order to create a multi-band optical filter, two fabrication approaches are compared and discussed. The first approach utilizes a current profile composed of a linear combination of sinusoidal current waveforms having different frequencies. The individual frequency of the waveform maps to a characteristic stop band in the reflectance spectrum. The stopbands of the optical filter created by the second approach, on the other hand, are controlled by stacking multiple porous silicon rugate multilayers having different fabrication conditions. The morphology of the resulting optical filters is tuned by controlling the electrolyte composition and the type of the silicon substrate. The reduction of sidelobes arising from the interference in the multilayers is observed by applying an index matching current profile to the anodizing current waveform. In order to stabilize the resulting optical filters against natural oxidation, atomic layer deposition of silicon dioxide on the pore wall is employed.

Method of making silicon carbide-silicon composite having improved oxidation resistance

NASA Technical Reports Server (NTRS)

Wang, Hongyu (Inventor); Luthra, Krishan Lal (Inventor)

2002-01-01

A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

Solar silicon from directional solidification of MG silicon produced via the silicon carbide route

NASA Technical Reports Server (NTRS)

Rustioni, M.; Margadonna, D.; Pirazzi, R.; Pizzini, S.

1986-01-01

A process of metallurgical grade (MG) silicon production is presented which appears particularly suitable for photovoltaic (PV) applications. The MG silicon is prepared in a 240 KVA, three electrode submerged arc furnace, starting from high grade quartz and high purity silicon carbide. The silicon smelted from the arc furnace was shown to be sufficiently pure to be directionally solidified to 10 to 15 kg. After grinding and acid leaching, had a material yield larger than 90%. With a MG silicon feedstock containing 3 ppmw B, 290 ppmw Fe, 190 ppmw Ti, and 170 ppmw Al, blended with 50% of off grade electronic grade (EG) silicon to reconduct the boron content to a concentration acceptable for solar cell fabrication, the 99% of deep level impurities were concentrated in the last 5% of the ingot. Quite remarkably this material has OCV values higher tham 540 mV and no appreciable shorts due to SiC particles.

Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

NASA Technical Reports Server (NTRS)

Whitman, Pamela K.; Feke, Donald L.

1986-01-01

The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

Develop Silicone Encapsulation Systems for Terrestrial Silicon Solar Arrays

NASA Technical Reports Server (NTRS)

1979-01-01

The results for Task 3 of the Low Cost Solar Array Project are presented. Task 3 is directed toward the development of a cost effective encapsulating system for photovoltaic modules using silicon based materials. The technical approach of the contract effort is divided into four special tasks: (1) technology review; (2) generation of concepts for screening and processing silicon encapsulation systems; (3) assessment of encapsulation concepts; and (4) evaluation of encapsulation concepts. The candidate silicon materials are reviewed. The silicon and modified silicon resins were chosen on the basis of similarity to materials with known weatherability, cost, initial tangential modulus, accelerated dirt pick-up test results and the ratio of the content of organic phenyl substitution of methyl substitution on the backbone of the silicon resin.

Laser-induced amorphization of silicon during pulsed-laser irradiation of TiN/Ti/polycrystalline silicon/SiO2/silicon

NASA Astrophysics Data System (ADS)

Chong, Y. F.; Pey, K. L.; Wee, A. T. S.; Thompson, M. O.; Tung, C. H.; See, A.

2002-11-01

In this letter, we report on the complex solidification structures formed during laser irradiation of a titanium nitride/titanium/polycrystalline silicon/silicon dioxide/silicon film stack. Due to enhanced optical coupling, the titanium nitride/titanium capping layer increases the melt depth of polycrystalline silicon by more than a factor of 2. It is found that the titanium atoms diffuse through the entire polycrystalline silicon layer during irradiation. Contrary to the expected polycrystalline silicon growth, distinct regions of polycrystalline and amorphous silicon are formed instead. Possible mechanisms for the formation of these microstructures are proposed.

Silicone-based composite materials simulate breast tissue to be used as ultrasonography training phantoms.

PubMed

Ustbas, Burcin; Kilic, Deniz; Bozkurt, Ayhan; Aribal, Mustafa Erkin; Akbulut, Ozge

2018-08-01

A silicone-based composite breast phantom is fabricated to be used as an education model in ultrasonography training. A matrix of silicone formulations is tracked to mimic the ultrasonography and tactile response of human breast tissue. The performance of two different additives: (i) silicone oil and (ii) vinyl-terminated poly (dimethylsiloxane) (PDMS) are monitored by a home-made acoustic setup. Through the use of 75 wt% vinyl-terminated PDMS in two-component silicone elastomer mixture, a sound velocity of 1.29 ± 0.09 × 10 3  m/s and an attenuation coefficient of 12.99 ± 0.08 dB/cm-values those match closely to the human breast tissue-are measured with 5 MHz probe. This model can also be used for needle biopsy as well as for self-exam trainings. Herein, we highlight the fabrication of a realistic, durable, accessible, and cost-effective training platform that contains skin layer, inner breast tissue, and tumor masses. Copyright © 2018 Elsevier B.V. All rights reserved.

A 850 GHz SIS receiver employing silicon micro-machining technology

NASA Technical Reports Server (NTRS)

Kooi, J. W.; Pety, J.; Schaffer, P. L.; Phillips, T. G.; Bumble, B.; LeDuc, H. G.; Walker, C. K.

1996-01-01

A 850 GHz superconductor-insulator-superconductor (SIS) heterodyne receiver which uses a radiofrequency tuned niobium tunnel junction fabricated on a 1 micron thick silicon nitrate membrane, is reported. From video and heterodyne measurements, it was calculated that the niobium film loss in the radiofrequency matching network is about 6.8 dB at 822 GHz. These results are approximately a factor of two higher than the theoretical loss predicted by the Mattis-Bardeen theory in the extreme anomalous limit. The junction design and the receiver configuration are described, including the mixer block, the membrane construction and the cooled optics. The performance tests using a Fourier transform spectrometer to measure the response of the radiofrequency matching network, and the SIS simulations of the receiver response to cold and hot loads, the infrared noise contribution and the overall mixer conversion efficiency, are reported. It is concluded that the receiver response is limited by the absorption loss in the radiofrequency matching network.

Wide-bandgap epitaxial heterojunction windows for silicon solar cells

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.; Loferski, Joseph J.; Beaulieu, Roland; Sekula-Moise, Patricia A.; Vernon, Stanley M.

1990-01-01

It is shown that the efficiency of a solar cell can be improved if minority carriers are confined by use of a wide-bandgap heterojunction window. For silicon (lattice constant a = 5.43 A), nearly lattice-matched wide-bandgap materials are ZnS (a = 5.41 A) and GaP (a = 5.45 A). Isotype n-n heterojuntions of both ZnS/Si and GaP/Si were grown on silicon n-p homojunction solar cells. Successful deposition processes used were metalorganic chemical vapor deposition (MO-CVD) for GaP and ZnS, and vacuum evaporation of ZnS. Planar (100) and (111) and texture-etched - (111)-faceted - surfaces were used. A decrease in minority-carrier surface recombination compared to a bare surface was seen from increased short-wavelength spectral response, increased open-circuit voltage, and reduced dark saturation current, with no degradation of the minority carrier diffusion length.

Shock compression of [001] single crystal silicon

DOE PAGES

Zhao, S.; Remington, B.; Hahn, E. N.; ...

2016-03-14

Silicon is ubiquitous in our advanced technological society, yet our current understanding of change to its mechanical response at extreme pressures and strain-rates is far from complete. This is due to its brittleness, making recovery experiments difficult. High-power, short-duration, laser-driven, shock compression and recovery experiments on [001] silicon (using impedance-matched momentum traps) unveiled remarkable structural changes observed by transmission electron microscopy. As laser energy increases, corresponding to an increase in peak shock pressure, the following plastic responses are are observed: surface cleavage along {111} planes, dislocations and stacking faults; bands of amorphized material initially forming on crystallographic orientations consistent withmore » dislocation slip; and coarse regions of amorphized material. Molecular dynamics simulations approach equivalent length and time scales to laser experiments and reveal the evolution of shock-induced partial dislocations and their crucial role in the preliminary stages of amorphization. Furthermore, application of coupled hydrostatic and shear stresses produce amorphization below the hydrostatically determined critical melting pressure under dynamic shock compression.« less

Study on Silicon Microstructure Processing Technology Based on Porous Silicon

NASA Astrophysics Data System (ADS)

Shang, Yingqi; Zhang, Linchao; Qi, Hong; Wu, Yalin; Zhang, Yan; Chen, Jing

2018-03-01

Aiming at the heterogeneity of micro - sealed cavity in silicon microstructure processing technology, the technique of preparing micro - sealed cavity of porous silicon is proposed. The effects of different solutions, different substrate doping concentrations, different current densities, and different etching times on the rate, porosity, thickness and morphology of the prepared porous silicon were studied. The porous silicon was prepared by different process parameters and the prepared porous silicon was tested and analyzed. For the test results, optimize the process parameters and experiments. The experimental results show that the porous silicon can be controlled by optimizing the parameters of the etching solution and the doping concentration of the substrate, and the preparation of porous silicon with different porosity can be realized by different doping concentration, so as to realize the preparation of silicon micro-sealed cavity, to solve the sensor sensitive micro-sealed cavity structure heterogeneous problem, greatly increasing the application of the sensor.

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

DOEpatents

Corman, Gregory Scot; Luthra, Krishan Lal

2002-01-01

A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

DOEpatents

Corman, Gregory Scot; Luthra, Krishan Lal

1999-01-01

A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Polypropylene vs silicone Ahmed valve with adjunctive mitomycin C in paediatric age group: a prospective controlled study

PubMed Central

El Sayed, Y; Awadein, A

2013-01-01

Purpose To compare the results of silicone and polypropylene Ahmed glaucoma valves (AGV) implanted during the first 10 years of life. Methods A prospective study was performed on 50 eyes of 33 patients with paediatric glaucoma. Eyes were matched to either polypropylene or silicone AGV. In eyes with bilateral glaucoma, one eye was implanted with polypropylene and the other eye was implanted with silicone AGV. Results Fifty eyes of 33 children were reviewed. Twenty five eyes received a polypropylene valve, and 25 eyes received a silicone valve. Eyes implanted with silicone valves achieved a significantly lower intraocular pressure (IOP) compared with the polypropylene group at 6 months, 1 year, and 2 years postoperatively. The average survival time was significantly longer (P=0.001 by the log-rank test) for the silicone group than for the polypropylene group and the cumulative probability of survival by the log-rank test at the end of the second year was 80% (SE: 8.0, 95% confidence interval (CI): 64–96%) in the silicone group and 56% (SE: 9.8, 95% CI: 40–90%) in the polypropylene group. The difference in the number of postoperative interventions and complications between both groups was statistically insignificant. Conclusion Silicone AGVs can achieve better IOP control, and longer survival with less antiglaucoma drops compared with polypropylene valves in children younger than 10 years. PMID:23579403

The match-to-match variation of match-running in elite female soccer.

PubMed

Trewin, Joshua; Meylan, César; Varley, Matthew C; Cronin, John

2018-02-01

The purpose of this study was to examine the match-to-match variation of match-running in elite female soccer players utilising GPS, using full-match and rolling period analyses. Longitudinal study. Elite female soccer players (n=45) from the same national team were observed during 55 international fixtures across 5 years (2012-2016). Data was analysed using a custom built MS Excel spreadsheet as full-matches and using a rolling 5-min analysis period, for all players who played 90-min matches (files=172). Variation was examined using co-efficient of variation and 90% confidence limits, calculated following log transformation. Total distance per minute exhibited the smallest variation when both the full-match and peak 5-min running periods were examined (CV=6.8-7.2%). Sprint-efforts were the most variable during a full-match (CV=53%), whilst high-speed running per minute exhibited the greatest variation in the post-peak 5-min period (CV=143%). Peak running periods were observed as slightly more variable than full-match analyses, with the post-peak period very-highly variable. Variability of accelerations (CV=17%) and Player Load (CV=14%) was lower than that of high-speed actions. Positional differences were also present, with centre backs exhibiting the greatest variation in high-speed movements (CV=41-65%). Practitioners and researchers should account for within player variability when examining match performances. Identification of peak running periods should be used to assist worst case scenarios. Whilst micro-sensor technology should be further examined as to its viable use within match-analyses. Copyright © 2017 Sports Medicine Australia. Published by Elsevier Ltd. All rights reserved.

Silicon nitride/silicon carbide composite densified materials prepared using composite powders

DOEpatents

Dunmead, S.D.; Weimer, A.W.; Carroll, D.F.; Eisman, G.A.; Cochran, G.A.; Susnitzky, D.W.; Beaman, D.R.; Nilsen, K.J.

1997-07-01

Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

Silicon carbide-silicon composite having improved oxidation resistance and method of making

NASA Technical Reports Server (NTRS)

Wang, Hongyu (Inventor); Luthra, Krishan Lal (Inventor)

1999-01-01

A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

Evaluation of the Antidiabetic Activity and Chemical Composition of Geranium collinum Root Extracts-Computational and Experimental Investigations.

PubMed

Numonov, Sodik; Edirs, Salamet; Bobakulov, Khayrulla; Qureshi, Muhammad Nasimullah; Bozorov, Khurshed; Sharopov, Farukh; Setzer, William N; Zhao, Haiqing; Habasi, Maidina; Sharofova, Mizhgona; Aisa, Haji Akber

2017-06-13

The root of Geranium collinum Steph is known in Tajik traditional medicine for its hepatoprotective, antioxidant, and anti-inflammatory therapeutic effects. The present study was conducted to evaluate of potential antidiabetic, antioxidant activities, total polyphenolic and flavonoid content from the different extracts (aqueous, aqueous-ethanolic) and individual compounds isolated of the root parts of G. collinum . The 50% aqueous-ethanolic extract possesses potent antidiabetic activity, with IC 50 values of 0.10 μg/mL and 0.09 μg/mL for the enzymes protein-tyrosine phosphatase (1B PTP-1B) and α-glucosidase, respectively. Phytochemical investigations of the 50% aqueous-ethanolic extract of G. collinum , led to the isolation of ten pure compounds identified as 3,3',4,4'-tetra- O -methylellagic acid ( 1 ), 3,3'-di- O -methylellagic acid ( 2 ), quercetin ( 3 ), caffeic acid ( 4 ), (+)-catechin ( 5 ), (-)-epicatechin ( 6 ), (-)-epigallocatechin ( 7 ), gallic acid ( 8 ), β-sitosterol-3- O -β-d-glucopyranoside ( 9 ), and corilagin ( 10 ). Their structures were determined based on 1D and 2D NMR and mass spectrometric analyses. Three isolated compounds exhibited strong inhibitory activity against PTP-1B, with IC 50 values below 0.9 μg/mL, more effective than the positive control (1.46 μg/mL). Molecular docking analysis suggests polyphenolic compounds such as corilagin, catechin and caffeic acid inhibit PTP-1B and β-sitosterol-3- O -β-d-gluco-pyranoside inhibits α-glucosidase. The experimental results suggest that the biological activity of G. collinum is related to its polyphenol contents. The results are also in agreement with computational investigations. Furthermore, the potent antidiabetic activity of the 50% aqueous-ethanolic extract from G. collinum shows promise for its future application in medicine. To the best of our knowledge, we hereby report, for the first time, the antidiabetic activity of G. collinum.

Polycrystalline silicon study: Low-cost silicon refining technology prospects and semiconductor-grade polycrystalline silicon availability through 1988

NASA Technical Reports Server (NTRS)

Costogue, E. N.; Ferber, R.; Lutwack, R.; Lorenz, J. H.; Pellin, R.

1984-01-01

Photovoltaic arrays that convert solar energy into electrical energy can become a cost effective bulk energy generation alternative, provided that an adequate supply of low cost materials is available. One of the key requirements for economic photovoltaic cells is reasonably priced silicon. At present, the photovoltaic industry is dependent upon polycrystalline silicon refined by the Siemens process primarily for integrated circuits, power devices, and discrete semiconductor devices. This dependency is expected to continue until the DOE sponsored low cost silicon refining technology developments have matured to the point where they are in commercial use. The photovoltaic industry can then develop its own source of supply. Silicon material availability and market pricing projections through 1988 are updated based on data collected early in 1984. The silicon refining industry plans to meet the increasing demands of the semiconductor device and photovoltaic product industries are overviewed. In addition, the DOE sponsored technology research for producing low cost polycrystalline silicon, probabilistic cost analysis for the two most promising production processes for achieving the DOE cost goals, and the impacts of the DOE photovoltaics program silicon refining research upon the commercial polycrystalline silicon refining industry are addressed.

A photonic link for donor spin qubits in silicon

NASA Astrophysics Data System (ADS)

Simmons, Stephanie

Atomically identical donor spin qubits in silicon offer excellent native quantum properties, which match or outperform many qubit rivals. To scale up such systems it would be advantageous to connect silicon donor spin qubits in a cavity-QED architecture. Many proposals in this direction introduce strong electric dipole interactions to the otherwise largely isolated spin qubit ground state in order to couple to superconducting cavities. Here I present an alternative approach, which uses the built-in strong electric dipole (optical) transitions of singly-ionized double donors in silicon. These donors, such as chalcogen donors S +, Se + and Te +, have the same ground-state spin Hamiltonians as shallow donors yet offer mid-gap binding energies and mid-IR optical access to excited orbital states. This photonic link is spin-selective which could be harnessed to measure and couple donor qubits using photonic cavity-QED. This approach should be robust to device environments with variable strains and electric fields, and will allow for CMOS- compatible, bulk-like, spatially separated donor qubit placement, optical parity measurements, and 4.2K operation. I will present preliminary data in support of this approach, including 4.2K optical initialization/readout in Earth's magnetic field, where long T1 and T2 times have been measured.

Micromachined silicon parallel acoustic delay lines as time-delayed ultrasound detector array for real-time photoacoustic tomography

NASA Astrophysics Data System (ADS)

Cho, Y.; Chang, C.-C.; Wang, L. V.; Zou, J.

2016-02-01

This paper reports the development of a new 16-channel parallel acoustic delay line (PADL) array for real-time photoacoustic tomography (PAT). The PADLs were directly fabricated from single-crystalline silicon substrates using deep reactive ion etching. Compared with other acoustic delay lines (e.g., optical fibers), the micromachined silicon PADLs offer higher acoustic transmission efficiency, smaller form factor, easier assembly, and mass production capability. To demonstrate its real-time photoacoustic imaging capability, the silicon PADL array was interfaced with one single-element ultrasonic transducer followed by one channel of data acquisition electronics to receive 16 channels of photoacoustic signals simultaneously. A PAT image of an optically-absorbing target embedded in an optically-scattering phantom was reconstructed, which matched well with the actual size of the imaged target. Because the silicon PADL array allows a signal-to-channel reduction ratio of 16:1, it could significantly simplify the design and construction of ultrasonic receivers for real-time PAT.

[Comparative study of nanosized and microsized silicon dioxide on spermatogenesis function of male rats].

PubMed

Fan, Yi-Ou; Zhang, Ying-Hua; Zhang, Xiao-Peng; Liu, Bing; Ma, Yi-xin; Jin, Yi-he

2006-09-01

To compare the effects of nanosized and microsized silicon dioxide on spermatogenesis function of male rats exposed by inhalation. 45 male rats were randomly divided into control group and four experimental groups which were exposed by 100 mg/m3 or 300 mg/m3 nanosized and microsized silicon dioxide in inhalation chambers 2 hours every other day. Age-matched rats were exposed to room air with the same condition and served as controls. 65 days later, the testicular and epididymal viscera coefficients, the quantity and quality of sperm were examined and the histopathological assessment was done. The changes in biochemical parameters in serum and testes were also measured. Nanosized silicon dioxide could induce histopathological changes of testes in rats, and the effect was higher than that of microsized particles at the same concentration. Nanosized silicon dioxide could reduce the sperm counts of rats and the testicular LDH-C4 activities, increase MDA levels in the testes and the effect was higher than that of microsized particles at the same concentration. Nanosized silicon dioxide could lead to the reduction of sperm motility, testicular LDH-C4 activities and 8-hydroxydeoxyguanosine (8-OHdG) concentration in serum elevation in particles-exposed rats compared with the control animals, but there are no significant difference compared with that of microsized particles at the same concentration. The present findings suggest a different effect of impairment of sperm production and maturation induced by inhalation of nanosized and microsized silicon dioxide, and nanosized silicon dioxide exerted more severe reaction.

Timing performance of the silicon PET insert probe

PubMed Central

Studen, A.; Burdette, D.; Chesi, E.; Cindro, V.; Clinthorne, N. H.; Cochran, E.; Grošičar, B.; Kagan, H.; Lacasta, C.; Linhart, V.; Mikuž, M.; Stankova, V.; Weilhammer, P.; Žontar, D.

2010-01-01

Simulation indicates that PET image could be improved by upgrading a conventional ring with a probe placed close to the imaged object. In this paper, timing issues related to a PET probe using high-resistivity silicon as a detector material are addressed. The final probe will consist of several (four to eight) 1-mm thick layers of silicon detectors, segmented into 1 × 1 mm2 pads, each pad equivalent to an independent p + nn+ diode. A proper matching of events in silicon with events of the external ring can be achieved with a good timing resolution. To estimate the timing performance, measurements were performed on a simplified model probe, consisting of a single 1-mm thick detector with 256 square pads (1.4 mm side), coupled with two VATAGP7s, application-specific integrated circuits. The detector material and electronics are the same that will be used for the final probe. The model was exposed to 511 keV annihilation photons from an 22Na source, and a scintillator (LYSO)–PMT assembly was used as a timing reference. Results were compared with the simulation, consisting of four parts: (i) GEANT4 implemented realistic tracking of electrons excited by annihilation photon interactions in silicon, (ii) calculation of propagation of secondary ionisation (electron–hole pairs) in the sensor, (iii) estimation of the shape of the current pulse induced on surface electrodes and (iv) simulation of the first electronics stage. A very good agreement between the simulation and the measurements were found. Both indicate reliable performance of the final probe at timing windows down to 20 ns. PMID:20215445

Timing performance of the silicon PET insert probe.

PubMed

Studen, A; Burdette, D; Chesi, E; Cindro, V; Clinthorne, N H; Cochran, E; Grosicar, B; Kagan, H; Lacasta, C; Linhart, V; Mikuz, M; Stankova, V; Weilhammer, P; Zontar, D

2010-01-01

Simulation indicates that PET image could be improved by upgrading a conventional ring with a probe placed close to the imaged object. In this paper, timing issues related to a PET probe using high-resistivity silicon as a detector material are addressed. The final probe will consist of several (four to eight) 1-mm thick layers of silicon detectors, segmented into 1 x 1 mm(2) pads, each pad equivalent to an independent p + nn+ diode. A proper matching of events in silicon with events of the external ring can be achieved with a good timing resolution. To estimate the timing performance, measurements were performed on a simplified model probe, consisting of a single 1-mm thick detector with 256 square pads (1.4 mm side), coupled with two VATAGP7s, application-specific integrated circuits. The detector material and electronics are the same that will be used for the final probe. The model was exposed to 511 keV annihilation photons from an (22)Na source, and a scintillator (LYSO)-PMT assembly was used as a timing reference. Results were compared with the simulation, consisting of four parts: (i) GEANT4 implemented realistic tracking of electrons excited by annihilation photon interactions in silicon, (ii) calculation of propagation of secondary ionisation (electron-hole pairs) in the sensor, (iii) estimation of the shape of the current pulse induced on surface electrodes and (iv) simulation of the first electronics stage. A very good agreement between the simulation and the measurements were found. Both indicate reliable performance of the final probe at timing windows down to 20 ns.

Glass-silicon column

DOEpatents

Yu, Conrad M.

2003-12-30

A glass-silicon column that can operate in temperature variations between room temperature and about 450.degree. C. The glass-silicon column includes large area glass, such as a thin Corning 7740 boron-silicate glass bonded to a silicon wafer, with an electrode embedded in or mounted on glass of the column, and with a self alignment silicon post/glass hole structure. The glass/silicon components are bonded, for example be anodic bonding. In one embodiment, the column includes two outer layers of silicon each bonded to an inner layer of glass, with an electrode imbedded between the layers of glass, and with at least one self alignment hole and post arrangement. The electrode functions as a column heater, and one glass/silicon component is provided with a number of flow channels adjacent the bonded surfaces.

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

PubMed

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

A blood-mimicking fluid for particle image velocimetry with silicone vascular models

NASA Astrophysics Data System (ADS)

Yousif, Majid Y.; Holdsworth, David W.; Poepping, Tamie L.

2011-03-01

For accurate particle image velocimetry measurements in hemodynamics studies, it is important to use a fluid with a refractive index ( n) matching that of the vascular models (phantoms) and ideally a dynamic viscosity matching human blood. In this work, a blood-mimicking fluid (BMF) composed of water, glycerol, and sodium iodide was formulated for a range of refractive indices to match most common silicone elastomers ( n = 1.40-1.43) and with corresponding dynamic viscosity within the average cited range of healthy human blood (4.4 ± 0.5 cP). Both refractive index and viscosity were attained at room temperature (22.2 ± 0.2°C), which eliminates the need for a temperature-control system. An optimally matched BMF, suitable for use in a vascular phantom ( n = 1.4140 ± 0.0008, Sylgard 184), was demonstrated with composition (by weight) of 47.38% water, 36.94% glycerol (44:56 glycerol-water ratio), and 15.68% sodium iodide salt, resulting in a dynamic viscosity of 4 .31 ± 0 .03 cP.

Purified silicon production system

DOEpatents

Wang, Tihu; Ciszek, Theodore F.

2004-03-30

Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

NASA Astrophysics Data System (ADS)

Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

2018-06-01

Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

Low cost silicon solar array project silicon materials task

NASA Technical Reports Server (NTRS)

1977-01-01

A program was established to develop a high temperature silicon production process using existing electric arc heater technology. Silicon tetrachloride and a reductant will be injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction is expected to occur and proceed essentially to completion, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection of the molten silicon will be developed using standard engineering approaches, and the salt vapor will later be electrolytically separated into its elemental constituents for recycle. Preliminary technical evaluations and economic projections indicate not only that this process appears to be feasible, but that it also has the advantages of rapid, high capacity production of good quality molten silicon at a nominal cost.

Investigation of ZnSe-coated silicon substrates for GaAs solar cells

NASA Technical Reports Server (NTRS)

Huber, Daniel A.; Olsen, Larry C.; Dunham, Glen; Addis, F. William

1993-01-01

Studies are being carried out to determine the feasibility of using ZnSe as a buffer layer for GaAs solar cells grown on silicon. This study was motivated by reports in the literature indicating ZnSe films had been grown by metallorganic chemical vapor deposition (MOCVD) onto silicon with EPD values of 2 x 10(exp 5) cm(sup -2), even though the lattice mismatch between silicon and ZnSe is 4.16 percent. These results combined with the fact that ZnSe and GaAs are lattice matched to within 0.24 percent suggest that the prospects for growing high efficiency GaAs solar cells onto ZnSe-coated silicon are very good. Work to date has emphasized development of procedures for MOCVD growth of (100) ZnSe onto (100) silicon wafers, and subsequent growth of GaAs films on ZnSe/Si substrates. In order to grow high quality single crystal GaAs with a (100) orientation, which is desirable for solar cells, one must grow single crystal (100) ZnSe onto silicon substrates. A process for growth of (100) ZnSe was developed involving a two-step growth procedure at 450 C. Single crystal, (100) GaAs films were grown onto the (100) ZnSe/Si substrates at 610 C that are adherent and specular. Minority carrier diffusion lengths for the GaAs films grown on ZnSe/Si substrates were determined from photoresponse properties of Al/GaAs Schottky barriers. Diffusion lengths for n-type GaAs films are currently on the order of 0.3 microns compared to 2.0 microns for films grown simultaneously by homoepitaxy.

Buried oxide layer in silicon

DOEpatents

Sadana, Devendra Kumar; Holland, Orin Wayne

2001-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide beingmore » shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE PAGES

Boccard, Mathieu; Holman, Zachary C.

2015-08-14

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Nonlinear silicon photonics

NASA Astrophysics Data System (ADS)

Tsia, Kevin K.; Jalali, Bahram

2010-05-01

An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

Compounding with Silicones.

PubMed

Allen, Loyd V

2015-01-01

Since the 1940s, methylchlorosilanes have been used to treat glassware to prevent blood from clotting. The use of silicones in pharmaceutical and medical applications has grown to where today they are used in many life-saving devices (pacemakers, hydrocephalic shunts) and pharmaceutical applications from tubing, to excipients in topical formulations, to adhesives to affix transdermal drug delivery systems, and are also being used in products as active pharmaceutical ingredients, such as antiflatulents. About 60% of today's skin-care products now contain some type of silicone where they are considered safe and are known to provide a pleasant "silky-touch," non-greasy, and non-staining feel. Silicones exhibit many useful characteristics, and the safety of these agents supports their numerous applications; their biocompatibility is partially due to their low-chemical reactivity displayed by silicones, low-surface energy, and their hydrophobicity. Silicones are used both as active ingredients and as excipients. In addition is their use for "siliconization," or surface treatment, of many parenteral packaging components. Dimethicone and silicone oil are used as lubricants on stoppers to aid machineability, in syringes to aid piston movement, or on syringe needles to reduce pain upon injection. Silicones are also useful in pharmaceutical compounding as is discussed in this artiele included with this article are in developing formulations with silicones.

A silk sericin/silicone nerve guidance conduit promotes regeneration of a transected sciatic nerve.

PubMed

Xie, Hongjian; Yang, Wen; Chen, Jianghai; Zhang, Jinxiang; Lu, Xiaochen; Zhao, Xiaobo; Huang, Kun; Li, Huili; Chang, Panpan; Wang, Zheng; Wang, Lin

2015-10-28

Peripheral nerve gap defects lead to significant loss of sensory or motor function. Tissue engineering has become an important alternative to nerve repair. Sericin, a major component of silk, is a natural protein whose value in tissue engineering has just begun to be explored. Here, the first time use of sericin in vivo is reported as a long-term implant for peripheral nerve regeneration. A sericin nerve guidance conduit is designed and fabricated. This conduit is highly porous with mechanical strength matching peripheral nerve tissue. It supports Schwann cell proliferation and is capable of up-regulating the transcription of glial cell derived neurotrophic factor and nerve growth factor in Schwann cells. The sericin conduit wrapped with a silicone conduit (sericin/silicone double conduits) is used for bridging repair of a 5 mm gap in a rat sciatic nerve transection model. The sericin/silicone double conduits achieve functional recovery comparable to that of autologous nerve grafting as evidenced by drastically improved nerve function and morphology. Importantly, this improvement is mainly attributed to the sericin conduit as the silicone conduit alone only produces marginal functional recovery. This sericin/silicone-double-conduit strategy offers an efficient and valuable alternative to autologous nerve grafting for repairing damaged peripheral nerve. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Genetic structuring, dispersal and taxonomy of the high-alpine populations of the Geranium arabicum/kilimandscharicum complex in tropical eastern Africa

PubMed Central

Gizaw, Abel; Tusiime, Felly M.; Masao, Catherine A.; Abdi, Ahmed A.; Hou, Yan; Nemomissa, Sileshi; Brochmann, Christian

2017-01-01

The scattered eastern African high mountains harbor a renowned and highly endemic flora, but the taxonomy and phylogeographic history of many plant groups are still insufficiently known. The high-alpine populations of the Geranium arabicum/kilimandscharicum complex present intricate morphological variation and have recently been suggested to comprise two new endemic taxa. Here we aim to contribute to a clarification of the taxonomy of these populations by analyzing genetic (AFLP) variation in range-wide high-alpine samples, and we address whether hybridization has contributed to taxonomic problems. We identified only two genetic groups. One corresponded to G. kilimandscharicum, which has been reported as exclusively high-alpine and confined to the eastern Rift mountains in East Africa. The other corresponded to G. arabicum, reported from lower altitudes on the same mountains as well as from a wide altitudinal span in Ethiopia and on the western Rift mountains in East Africa. The four populations analyzed of a recently described species from the Bale Mts in Ethiopia were admixed, indicating that they result from recent long-distance dispersal of G. kilimandscharicum from East Africa followed by hybridization with local G. arabicum in naturally disturbed habitats. Some admixture between the two genetic groups was also inferred on other mountains, supporting earlier suggestions of introgression based on morphology. We did not find support for recognition of the recently suggested new subspecies of G. arabicum in Ethiopia. Interestingly, the high-alpine G. kilimandscharicum lacked clear geographic structuring, suggesting a recent history of colonization of the different mountains or extensive intermountain gene flow. PMID:28552970

Silicon entering through silicon utilizing organisms has biological effects in human beings

NASA Astrophysics Data System (ADS)

Shraddhamayananda, S.

2012-12-01

Except in the lungs, there is no evidence that silicon can do any harm in our body and Silicon is as essential as magnesium and calcium for us. It helps in proper activities of the bone tissues and all of the components in the human skeletal system. It can prevent osteoporosis in bones and also helps in lowering of blood pressure. Silicon can also inhibit fungal disease by physically inhibiting fungal germ tube penetration of the epidermis. Many of our foods which are associated with silicon utilizing organisms like rice, vegetables, wheat etc, contain plenty silicon, however, during processing most silicon get lost. In alternative medicine silicon is used to promote expulsion of foreign bodies from tissue, in formation of suppuration and finally expulsion of pus from abscesses. Silicon is also used to remove fibrotic lesions and scar tissue and in this way it can prevent formation of keloids. Sometimes it is also used to treat chronic otitis media, and chronic fistula,

Fabrication and characterization of silicon quantum dots in Si-rich silicon carbide films.

PubMed

Chang, Geng-Rong; Ma, Fei; Ma, Dayan; Xu, Kewei

2011-12-01

Amorphous Si-rich silicon carbide films were prepared by magnetron co-sputtering and subsequently annealed at 900-1100 degrees C. After annealing at 1100 degrees C, this configuration of silicon quantum dots embedded in amorphous silicon carbide formed. X-ray photoelectron spectroscopy was used to study the chemical modulation of the films. The formation and orientation of silicon quantum dots were characterized by glancing angle X-ray diffraction, which shows that the ratio of silicon and carbon significantly influences the species of quantum dots. High-resolution transmission electron microscopy investigations directly demonstrated that the formation of silicon quantum dots is heavily dependent on the annealing temperatures and the ratio of silicon and carbide. Only the temperature of about 1100 degrees C is enough for the formation of high-density and small-size silicon quantum dots due to phase separation and thermal crystallization. Deconvolution of the first order Raman spectra shows the existence of a lower frequency peak in the range 500-505 cm(-1) corresponding to silicon quantum dots with different atom ratio of silicon and carbon.

Crystalline silicon growth in nickel/a-silicon bilayer

NASA Astrophysics Data System (ADS)

Mohiddon, Md Ahamad; Naidu, K. Lakshun; Dalba, G.; Rocca, F.; Krishna, M. Ghanashyam

2013-02-01

The effect of substrate temperature on amorphous Silicon crystallization, mediated by metal impurity is reported. Bilayers of Ni(200nm)/Si(400nm) are deposited on fused silica substrate by electron beam evaporator at 200 and 500 °C. Raman mapping shows that, 2 to 5 micron size crystalline silicon clusters are distributed over the entire surface of the sample. X-ray diffraction and X-ray absorption spectroscopy studies demonstrate silicon crystallizes over the metal silicide seeds and grow with the annealing temperature.

Nonlinear silicon photonics

NASA Astrophysics Data System (ADS)

Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

2017-09-01

Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

Silicon micro-mold

DOEpatents

Morales, Alfredo M [Livermore, CA

2006-10-24

The present invention describes a method for rapidly fabricating a robust 3-dimensional silicon-mold for use in preparing complex metal micro-components. The process begins by depositing a conductive metal layer onto one surface of a silicon wafer. A thin photoresist and a standard lithographic mask are then used to transfer a trace image pattern onto the opposite surface of the wafer by exposing and developing the resist. The exposed portion of the silicon substrate is anisotropically etched through the wafer thickness down to conductive metal layer to provide an etched pattern consisting of a series of rectilinear channels and recesses in the silicon which serve as the silicon micro-mold. Microcomponents are prepared with this mold by first filling the mold channels and recesses with a metal deposit, typically by electroplating, and then removing the silicon micro-mold by chemical etching.

A bipolar analog front-end integrated circuit for the SDC silicon tracker

NASA Astrophysics Data System (ADS)

Kipnis, I.; Spieler, H.; Collins, T.

1993-11-01

A low noise, low power, high bandwidth, radiation hard, silicon bipolar transistor full-custom integrated circuit (IC) containing 64 channels of analog signal processing has been developed for the SDC silicon tracker. The IC was designed and tested at LBL and was fabricated using CBIC-U2, 4 GHz f(sub T) complementary bipolar technology. Each channel contains the following functions: low noise preamplification, pulse shaping, and threshold discrimination. This is the first iteration of the production analog IC for the SDC silicon tracker. The IC is laid out to directly match the 50 micron pitch double-sided silicon strip detector. The chip measures 6.8 mm by 3.1 mm and contains 3,600 transistors. Three stages of amplification provide 180 mV/fC of gain with a 35 nsec peaking time at the comparator input. For a 14 pF detector capacitance, the equivalent noise charge is 1300 el. rms at a power consumption of 1 mW/channel from a single 3.5 V supply. With the discriminator threshold set to four times the noise level, a 16 nsec time-walk for 1.25 to 10 fC signals is achieved using a time-walk compensation network. Irradiation tests at TRIUMF to a Phi = 10(exp 14) protons/sq cm have been performed on the IC, demonstrating the radiation hardness of the complementary bipolar process.

Design of Silicon Photonic Crystal Waveguides for High Gain Raman Amplification Using Two Symmetric Transvers-Electric-Like Slow-Light Modes

NASA Astrophysics Data System (ADS)

Hsiao, Yi-Hua; Iwamoto, Satoshi; Arakawa, Yasuhiko

2013-04-01

We designed silicon photonic crystal (PhC) waveguides (WGs) for efficient silicon Raman amplifiers and lasers. We adopted narrow-width WGs to utilize two symmetric transvers-electric-like (TE-like) guided modes, which permit efficient external coupling for both the pump and Stokes waves. Modifying the size and shape of air holes surrounding the line-defect WG structures could tune the frequency difference between these two modes, at the Brillouin-zone edge, to match the Raman shift of silicon. Thus, small group velocities are also available both for pump and Stokes waves simultaneously, which results in a large enhancement of Raman gain. The enhancement factor of the Raman gain in the designed structure is more than 100 times that reported previously.

Reprogramming hMSCs morphology with silicon/porous silicon geometric micro-patterns.

PubMed

Ynsa, M D; Dang, Z Y; Manso-Silvan, M; Song, J; Azimi, S; Wu, J F; Liang, H D; Torres-Costa, V; Punzon-Quijorna, E; Breese, M B H; Garcia-Ruiz, J P

2014-04-01

Geometric micro-patterned surfaces of silicon combined with porous silicon (Si/PSi) have been manufactured to study the behaviour of human Mesenchymal Stem Cells (hMSCs). These micro-patterns consist of regular silicon hexagons surrounded by spaced columns of silicon equilateral triangles separated by PSi. The results show that, at an early culture stage, the hMSCs resemble quiescent cells on the central hexagons with centered nuclei and actin/β-catenin and a microtubules network denoting cell adhesion. After 2 days, hMSCs adapted their morphology and cytoskeleton proteins from cell-cell dominant interactions at the center of the hexagonal surface. This was followed by an intermediate zone with some external actin fibres/β-catenin interactions and an outer zone where the dominant interactions are cell-silicon. Cells move into silicon columns to divide, migrate and communicate. Furthermore, results show that Runx2 and vitamin D receptors, both specific transcription factors for skeleton-derived cells, are expressed in cells grown on micropatterned silicon under all observed circumstances. On the other hand, non-phenotypic alterations are under cell growth and migration on Si/PSi substrates. The former consideration strongly supports the use of micro-patterned silicon surfaces to address pending questions about the mechanisms of human bone biogenesis/pathogenesis and the study of bone scaffolds.

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

PubMed Central

König, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

2017-01-01

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement. In analogy to the concept of modulation doping, originally invented for III-V semiconductors, we demonstrate a heterostructure modulation doping method for silicon. Our approach utilizes a specific acceptor state of aluminium atoms in silicon dioxide to generate holes as majority carriers in adjacent silicon. By relocating the dopants from silicon to silicon dioxide, Si nanoscale doping problems are circumvented. In addition, the concept of aluminium-induced acceptor states for passivating hole selective tunnelling contacts as required for high-efficiency photovoltaics is presented and corroborated by first carrier lifetime and tunnelling current measurements. PMID:28425460

78 FR 73195 - Privacy Act of 1974: CMS Computer Matching Program Match No. 2013-01; HHS Computer Matching...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-12-05

.... Description of the Matching Program A. General The Computer Matching and Privacy Protection Act of 1988 (Pub... 1974: CMS Computer Matching Program Match No. 2013-01; HHS Computer Matching Program Match No. 1312...). ACTION: Notice of Computer Matching Program (CMP). SUMMARY: In accordance with the requirements of the...

Release of low molecular weight silicones and platinum from silicone breast implants.

PubMed

Lykissa, E D; Kala, S V; Hurley, J B; Lebovitz, R M

1997-12-01

We have conducted a series of studies addressing the chemical composition of silicone gels from breast implants as well as the diffusion of low molecular weight silicones (LM-silicones) and heavy metals from intact implants into various surrounding media, namely, lipid-rich medium (soy oil), aqueous tissue culture medium (modified Dulbecco's medium, DMEM), or an emulsion consisting of DMEM plus 10% soy oil. LM-silicones in both implants and surrounding media were detected and quantitated using gas chromatography (GC) coupled with atomic emission (GC-AED) as well as mass spectrometric (GC/MS) detectors, which can detect silicones in the nanogram range. Platinum, a catalyst used in the preparation of silicone gels, was detected and quantitated using inductive argon-coupled plasma/mass spectrometry (ICP-MS), which can detect platinum in the parts per trillion range. Our results indicate that GC-detectable low molecular weight silicones contribute approximately 1-2% to the total gel mass and consist predominantly of cyclic and linear poly-(dimethylsiloxanes) ranging from 3 to 20 siloxane [(CH3)2-Si-O] units (molecular weight 200-1500). Platinum can be detected in implant gels at levels of approximately 700 micrograms/kg by ICP-MS. The major component of implant gels appears to be high molecular weight silicone polymers (HM-silicones) too large to be detected by GC. However, these HM-silicones can be converted almost quantitatively (80% by mass) to LM-silicones by heating implant gels at 150-180 degrees C for several hours. We also studied the rates at which LM-silicones and platinum leak through the intact implant outer shell into the surrounding media under a variety of conditions. Leakage of silicones was greatest when the surrounding medium was lipid-rich, and up to 10 mg/day LM-silicones was observed to diffuse into a lipid-rich medium per 250 g of implant at 37 degrees C. This rate of leakage was maintained over a 7-day experimental period. Similarly, platinum was

Comparison of Point Matching Techniques for Road Network Matching

NASA Astrophysics Data System (ADS)

Hackeloeer, A.; Klasing, K.; Krisp, J. M.; Meng, L.

2013-05-01

Map conflation investigates the unique identification of geographical entities across different maps depicting the same geographic region. It involves a matching process which aims to find commonalities between geographic features. A specific subdomain of conflation called Road Network Matching establishes correspondences between road networks of different maps on multiple layers of abstraction, ranging from elementary point locations to high-level structures such as road segments or even subgraphs derived from the induced graph of a road network. The process of identifying points located on different maps by means of geometrical, topological and semantical information is called point matching. This paper provides an overview of various techniques for point matching, which is a fundamental requirement for subsequent matching steps focusing on complex high-level entities in geospatial networks. Common point matching approaches as well as certain combinations of these are described, classified and evaluated. Furthermore, a novel similarity metric called the Exact Angular Index is introduced, which considers both topological and geometrical aspects. The results offer a basis for further research on a bottom-up matching process for complex map features, which must rely upon findings derived from suitable point matching algorithms. In the context of Road Network Matching, reliable point matches provide an immediate starting point for finding matches between line segments describing the geometry and topology of road networks, which may in turn be used for performing a structural high-level matching on the network level.

Modeling the high-frequency complex modulus of silicone rubber using standing Lamb waves and an inverse finite element method.

PubMed

Jonsson, Ulf; Lindahl, Olof; Andersson, Britt

2014-12-01

To gain an understanding of the high-frequency elastic properties of silicone rubber, a finite element model of a cylindrical piezoelectric element, in contact with a silicone rubber disk, was constructed. The frequency-dependent elastic modulus of the silicone rubber was modeled by a fourparameter fractional derivative viscoelastic model in the 100 to 250 kHz frequency range. The calculations were carried out in the range of the first radial resonance frequency of the sensor. At the resonance, the hyperelastic effect of the silicone rubber was modeled by a hyperelastic compensating function. The calculated response was matched to the measured response by using the transitional peaks in the impedance spectrum that originates from the switching of standing Lamb wave modes in the silicone rubber. To validate the results, the impedance responses of three 5-mm-thick silicone rubber disks, with different radial lengths, were measured. The calculated and measured transitional frequencies have been compared in detail. The comparison showed very good agreement, with average relative differences of 0.7%, 0.6%, and 0.7% for the silicone rubber samples with radial lengths of 38.0, 21.4, and 11.0 mm, respectively. The average complex elastic moduli of the samples were (0.97 + 0.009i) GPa at 100 kHz and (0.97 + 0.005i) GPa at 250 kHz.

In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon

PubMed Central

Makey, Ghaith; Elahi, Parviz; Çolakoğlu, Tahir; Ergeçen, Emre; Yavuz, Özgün; Hübner, René; Borra, Mona Zolfaghari; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F. Ömer

2017-01-01

Silicon is an excellent material for microelectronics and integrated photonics1–3 with untapped potential for mid-IR optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realised with techniques like reactive ion etching. Embedded optical elements, like in glass7, electronic devices, and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1 µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has a different optical index than unmodified parts, which enables numerous photonic devices. Optionally, these parts are chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface, i.e., “in-chip” microstructures for microfluidic cooling of chips, vias, MEMS, photovoltaic applications and photonic devices that match or surpass the corresponding state-of-the-art device performances. PMID:28983323

In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon

NASA Astrophysics Data System (ADS)

Tokel, Onur; Turnalı, Ahmet; Makey, Ghaith; Elahi, Parviz; ćolakoǧlu, Tahir; Ergeçen, Emre; Yavuz, Ã.-zgün; Hübner, René; Zolfaghari Borra, Mona; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F. Ã.-mer

2017-10-01

Silicon is an excellent material for microelectronics and integrated photonics1-3, with untapped potential for mid-infrared optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow the fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realized with techniques like reactive ion etching. Embedded optical elements7, electronic devices and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1-µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has an optical index different to that in unmodified parts, enabling the creation of numerous photonic devices. Optionally, these parts can be chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface—that is, `in-chip'—microstructures for microfluidic cooling of chips, vias, micro-electro-mechanical systems, photovoltaic applications and photonic devices that match or surpass corresponding state-of-the-art device performances.

Structural alloy with a protective coating containing silicon or silicon-oxide

DOEpatents

Natesan, Ken

1994-01-01

An iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100.degree. C.

Patterns of genetic diversity reveal multiple introductions and recurrent founder effects during range expansion in invasive populations of Geranium carolinianum (Geraniaceae)

PubMed Central

Shirk, R Y; Hamrick, J L; Zhang, C; Qiang, S

2014-01-01

Genetic diversity, and thus the adaptive potential of invasive populations, is largely based on three factors: patterns of genetic diversity in the species' native range, the number and location of introductions and the number of founding individuals per introduction. Specifically, reductions in genetic diversity (‘founder effects') should be stronger for species with low within-population diversity in their native range and few introductions of few individuals to the invasive range. We test these predictions with Geranium carolinianum, a winter annual herb native to North America and invasive in China. We measure the extent of founder effects using allozymes and microsatellites, and ask whether this is consistent with its colonization history and patterns of diversity in the native range. In the native range, genetic diversity is higher and structure is lower than expected based on life history traits. In China, our results provide evidence for multiple introductions near Nanjing, Jiangsu province, with subsequent range expansion to the west and south. Patterns of genetic diversity across China reveal weak founder effects that are driven largely by low-diversity populations at the expansion front, away from the introduction location. This suggests that reduced diversity in China has resulted from successive founder events during range expansion, and that the loss of genetic diversity in the Nanjing area was mitigated by multiple introductions from diverse source populations. This has implications for the future of G. carolinianum in China, as continued gene flow among populations should eventually increase genetic diversity within the more recently founded populations. PMID:24346497

Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ivanova, E. V., E-mail: Ivanova@mail.ioffe.ru; Sitnikova, A. A.; Aleksandrov, O. V.

2016-06-15

It is found for the first time that silicon nanoclusters are formed in the surface layer of thermal silicon dioxide under high-temperature annealing (T = 1150°C) in dried nitrogen. Analysis of the cathodoluminescence spectra shows that an imperfect surface layer appears upon such annealing of silicon dioxide, with silicon nanoclusters formed in this layer upon prolonged annealing. Transmission electron microscopy demonstrated that the silicon clusters are 3–5.5 nm in size and lie at a depth of about 10 nm from the surface. Silicon from the thermal film of silicon dioxide serves as the material from which the silicon nanoclusters aremore » formed. This method of silicon-nanocluster formation is suggested for the first time.« less

Diamond-silicon carbide composite

DOEpatents

Qian, Jiang; Zhao, Yusheng

2006-06-13

Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m^1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

Use of silicon in liquid sintered silicon nitrides and sialons

DOEpatents

Raj, R.; Baik, S.

1984-12-11

This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic. 4 figs.

Use of silicon in liquid sintered silicon nitrides and sialons

DOEpatents

Raj, Rishi; Baik, Sunggi

1984-12-11

This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic.

A micromachined silicon parallel acoustic delay line (PADL) array for real-time photoacoustic tomography (PAT)

NASA Astrophysics Data System (ADS)

Cho, Young Y.; Chang, Cheng-Chung; Wang, Lihong V.; Zou, Jun

2015-03-01

To achieve real-time photoacoustic tomography (PAT), massive transducer arrays and data acquisition (DAQ) electronics are needed to receive the PA signals simultaneously, which results in complex and high-cost ultrasound receiver systems. To address this issue, we have developed a new PA data acquisition approach using acoustic time delay. Optical fibers were used as parallel acoustic delay lines (PADLs) to create different time delays in multiple channels of PA signals. This makes the PA signals reach a single-element transducer at different times. As a result, they can be properly received by single-channel DAQ electronics. However, due to their small diameter and fragility, using optical fiber as acoustic delay lines poses a number of challenges in the design, construction and packaging of the PADLs, thereby limiting their performances and use in real imaging applications. In this paper, we report the development of new silicon PADLs, which are directly made from silicon wafers using advanced micromachining technologies. The silicon PADLs have very low acoustic attenuation and distortion. A linear array of 16 silicon PADLs were assembled into a handheld package with one common input port and one common output port. To demonstrate its real-time PAT capability, the silicon PADL array (with its output port interfaced with a single-element transducer) was used to receive 16 channels of PA signals simultaneously from a tissue-mimicking optical phantom sample. The reconstructed PA image matches well with the imaging target. Therefore, the silicon PADL array can provide a 16× reduction in the ultrasound DAQ channels for real-time PAT.

Matching a Distribution by Matching Quantiles Estimation

PubMed Central

Sgouropoulos, Nikolaos; Yao, Qiwei; Yastremiz, Claudia

2015-01-01

Motivated by the problem of selecting representative portfolios for backtesting counterparty credit risks, we propose a matching quantiles estimation (MQE) method for matching a target distribution by that of a linear combination of a set of random variables. An iterative procedure based on the ordinary least-squares estimation (OLS) is proposed to compute MQE. MQE can be easily modified by adding a LASSO penalty term if a sparse representation is desired, or by restricting the matching within certain range of quantiles to match a part of the target distribution. The convergence of the algorithm and the asymptotic properties of the estimation, both with or without LASSO, are established. A measure and an associated statistical test are proposed to assess the goodness-of-match. The finite sample properties are illustrated by simulation. An application in selecting a counterparty representative portfolio with a real dataset is reported. The proposed MQE also finds applications in portfolio tracking, which demonstrates the usefulness of combining MQE with LASSO. PMID:26692592

Silicon drift detectors with on-chip electronics for x-ray spectroscopy.

PubMed

Fiorini, C; Longoni, A; Hartmann, R; Lechner, P; Strüder, L

1997-01-01

The silicon drift detector (SDD) is a semiconductor device based on high resistivity silicon fully depleted through junctions implanted on both sides of the semiconductor wafer. The electrons generated by the ionizing radiation are driven by means of a suitable electric field from the point of interaction toward a collecting anode of small capacitance, independent of the active area of the detector. A suitably designed front-end JFET has been directly integrated on the detector chip close to the anode region, in order to obtain a nearly ideal capacitive matching between detector and transistor and to minimize the stray capacitances of the connections. This feature allows it to reach high energy resolution also at high count rates and near room temperature. The present work describes the structure and the performance of SDDs specially designed for high resolution spectroscopy with soft x rays at high detection rate. Experimental results of SDDs used in spectroscopy applications are also reported.

On the refractive index of sodium iodide solutions for index matching in PIV

NASA Astrophysics Data System (ADS)

Bai, Kunlun; Katz, Joseph

2014-04-01

Refractive index matching has become a popular technique for facilitating applications of modern optical diagnostic techniques, such as particle image velocimetry, in complex systems. By matching the refractive index of solid boundaries with that of the liquid, unobstructed optical paths can be achieved for illumination and image acquisition. In this research note, we extend previously provided data for the refractive index of aqueous solutions of sodium iodide (NaI) for concentrations reaching the temperature-dependent solubility limit. Results are fitted onto a quadratic empirical expression relating the concentration to the refractive index. Temperature effects are also measured. The present range of indices, 1.333-1.51, covers that of typical transparent solids, from silicone elastomers to several recently introduced materials that could be manufactured using rapid prototyping. We also review briefly previous measurements of the refractive index, viscosity, and density of NaI solutions, as well as prior research that has utilized this fluid.

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon.

PubMed

Ben Slama, Sonia; Hajji, Messaoud; Ezzaouia, Hatem

2012-08-17

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications.

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon

PubMed Central

2012-01-01

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications. PMID:22901341

Acquisition of physical dormancy and ontogeny of the micropyle–water-gap complex in developing seeds of Geranium carolinianum (Geraniaceae)

PubMed Central

Gama-Arachchige, N. S.; Baskin, J. M.; Geneve, R. L.; Baskin, C. C.

2011-01-01

Background and Aims The ‘hinged valve gap’ has been previously identified as the initial site of water entry (i.e. water gap) in physically dormant (PY) seeds of Geranium carolinianum (Geraniaceae). However, neither the ontogeny of the hinged valve gap nor acquisition of PY by seeds of Geraniaceae has been studied previously. The aims of the present study were to investigate the physiological events related to acquisition of PY and the ontogeny of the hinged valve gap and seed coat of G. carolinianum. Methods Seeds of G. carolinianum were studied from the ovule stage until dispersal. The developmental stages of acquisition of germinability, physiological maturity and PY were determined by seed measurement, germination and imbibition experiments using intact seeds and isolated embryos of both fresh and slow-dried seeds. Ontogeny of the seed coat and water gap was studied using light microscopy. Key Results Developing seeds achieved germinability, physiological maturity and PY on days 9, 14 and 20 after pollination (DAP), respectively. The critical moisture content of seeds on acquisition of PY was 11 %. Slow-drying caused the stage of acquisition of PY to shift from 20 to 13 DAP. Greater extent of cell division and differentiation at the micropyle, water gap and chalaza than at the rest of the seed coat resulted in particular anatomical features. Palisade and subpalisade cells of varying forms developed in these sites. A clear demarcation between the water gap and micropyle is not evident due to their close proximity. Conclusions Acquisition of PY in seeds of G. carolinianum occurs after physiological maturity and is triggered by maturation drying. The micropyle and water gap cannot be considered as two separate entities, and thus it is more appropriate to consider them together as a ‘micropyle–water-gap complex’. PMID:21546433

Acquisition of physical dormancy and ontogeny of the micropyle--water-gap complex in developing seeds of Geranium carolinianum (Geraniaceae).

PubMed

Gama-Arachchige, N S; Baskin, J M; Geneve, R L; Baskin, C C

2011-07-01

The 'hinged valve gap' has been previously identified as the initial site of water entry (i.e. water gap) in physically dormant (PY) seeds of Geranium carolinianum (Geraniaceae). However, neither the ontogeny of the hinged valve gap nor acquisition of PY by seeds of Geraniaceae has been studied previously. The aims of the present study were to investigate the physiological events related to acquisition of PY and the ontogeny of the hinged valve gap and seed coat of G. carolinianum. Seeds of G. carolinianum were studied from the ovule stage until dispersal. The developmental stages of acquisition of germinability, physiological maturity and PY were determined by seed measurement, germination and imbibition experiments using intact seeds and isolated embryos of both fresh and slow-dried seeds. Ontogeny of the seed coat and water gap was studied using light microscopy. Developing seeds achieved germinability, physiological maturity and PY on days 9, 14 and 20 after pollination (DAP), respectively. The critical moisture content of seeds on acquisition of PY was 11 %. Slow-drying caused the stage of acquisition of PY to shift from 20 to 13 DAP. Greater extent of cell division and differentiation at the micropyle, water gap and chalaza than at the rest of the seed coat resulted in particular anatomical features. Palisade and subpalisade cells of varying forms developed in these sites. A clear demarcation between the water gap and micropyle is not evident due to their close proximity. Acquisition of PY in seeds of G. carolinianum occurs after physiological maturity and is triggered by maturation drying. The micropyle and water gap cannot be considered as two separate entities, and thus it is more appropriate to consider them together as a 'micropyle--water-gap complex'.

Structural alloy with a protective coating containing silicon or silicon-oxide

DOEpatents

Natesan, K.

1994-12-27

An iron-based alloy is described containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100 C. 8 figures.

Dislocation-free strained silicon-on-silicon by in-place bonding

NASA Astrophysics Data System (ADS)

Cohen, G. M.; Mooney, P. M.; Paruchuri, V. K.; Hovel, H. J.

2005-06-01

In-place bonding is a technique where silicon-on-insulator (SOI) slabs are bonded by hydrophobic attraction to the underlying silicon substrate when the buried oxide is undercut in dilute HF. The bonding between the exposed surfaces of the SOI slab and the substrate propagates simultaneously with the buried oxide etching. As a result, the slabs maintain their registration and are referred to as "bonded in-place". We report the fabrication of dislocation-free strained silicon slabs from pseudomorphic trilayer Si/SiGe/SOI by in-place bonding. Removal of the buried oxide allows the compressively strained SiGe film to relax elastically and induce tensile strain in the top and bottom silicon films. The slabs remain bonded to the substrate by van der Waals forces when the wafer is dried. Subsequent annealing forms a covalent bond such that when the upper Si and the SiGe layer are removed, the bonded silicon slab remains strained.

Develop Silicone Encapsulation Systems for Terrestrial Silicon Solar Arrays

NASA Technical Reports Server (NTRS)

1979-01-01

The results of a study for Task 3 of the Low Cost Solar Array Project, directed toward the development of a cost effective encapsulation system for photovoltaic modules using silicon based materials, are reported. Results of the following are discussed: (1) weather-ometer stressing vs. weathering history of silicon and silicon modified materials; (2) humidity/temperature cycling exposure; (3) exposure at high humidity/high temperature; (4) outdoor exposure stress; (5) thermal cycling stress; and (6) UV screening agents. The plans for the next quarter are outlined.

A silicon Brillouin laser

NASA Astrophysics Data System (ADS)

Otterstrom, Nils T.; Behunin, Ryan O.; Kittlaus, Eric A.; Wang, Zheng; Rakich, Peter T.

2018-06-01

Brillouin laser oscillators offer powerful and flexible dynamics as the basis for mode-locked lasers, microwave oscillators, and optical gyroscopes in a variety of optical systems. However, Brillouin interactions are markedly weak in conventional silicon photonic waveguides, stifling progress toward silicon-based Brillouin lasers. The recent advent of hybrid photonic-phononic waveguides has revealed Brillouin interactions to be one of the strongest and most tailorable nonlinearities in silicon. In this study, we have harnessed these engineered nonlinearities to demonstrate Brillouin lasing in silicon. Moreover, we show that this silicon-based Brillouin laser enters a regime of dynamics in which optical self-oscillation produces phonon linewidth narrowing. Our results provide a platform to develop a range of applications for monolithic integration within silicon photonic circuits.

Structural alloy with a protective coating containing silicon or silicon-oxide

DOEpatents

Natesan, K.

1992-01-01

This invention is comprised of an iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100{degrees}C.

Role of near-field enhancement in plasmonic laser nanoablation using gold nanorods on a silicon substrate.

PubMed

Harrison, R K; Ben-Yakar, Adela

2010-10-11

We present experimental results for the plasmonic laser ablation of silicon with nanoscale features as small as 22 x 66 nm using single near-infrared, femtosecond laser pulses incident on gold nanorods. Near the ablation threshold, these features are photo-imprints of gold nanorod particles positioned on the surface of the silicon and have feature sizes similar to the nanorods. The single rod-shaped ablation pattern matches the enhancement patterns of the Poynting vector magnitude on the surface of silicon, implying that the ablation is a result of the plasmonic enhancement of the incident electromagnetic waves in the near-field of the particles. Interestingly, the ablation pattern is different from the two separated holes at the ends of the nanorod, as would be expected from the electric field--|E|(2) enhancement pattern. We measured the plasmonic ablation threshold fluence to be almost two orders of magnitude less than the femtosecond laser ablation threshold of silica, present in the thin native oxide layer on the surface of silicon. This value also agrees with the enhancement of the Poynting vector of a nanorod on silicon as calculated with electromagnetic simulations. We thus conclude that plasmonic ablation with plasmonic nanoparticles depends directly on the polarization and the value of the near-field enhancement of the Poynting vector and not the square of the electric field as previously suggested.

Micromachined silicon electrostatic chuck

DOEpatents

Anderson, R.A.; Seager, C.H.

1996-12-10

An electrostatic chuck is faced with a patterned silicon plate, created by micromachining a silicon wafer, which is attached to a metallic base plate. Direct electrical contact between the chuck face (patterned silicon plate`s surface) and the silicon wafer it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands that protrude less than 5 micrometers from the otherwise flat surface of the chuck face. The islands may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face and wafer contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face, typically 0.5 to 5 percent. The pattern of the islands, together with at least one hole bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas. 6 figs.

Micromachined silicon electrostatic chuck

DOEpatents

Anderson, Robert A.; Seager, Carleton H.

1996-01-01

An electrostatic chuck is faced with a patterned silicon plate 11, created y micromachining a silicon wafer, which is attached to a metallic base plate 13. Direct electrical contact between the chuck face 15 (patterned silicon plate's surface) and the silicon wafer 17 it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands 19 that protrude less than 5 micrometers from the otherwise flat surface of the chuck face 15. The islands 19 may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face 15 and wafer 17 contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands 19 are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face 15, typically 0.5 to 5 percent. The pattern of the islands 19, together with at least one hole 12 bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas.

76 FR 5235 - Privacy Act of 1974, as Amended; Computer Matching Program (SSA Internal Match)-Match Number 1014

Federal Register 2010, 2011, 2012, 2013, 2014

2011-01-28

...; Computer Matching Program (SSA Internal Match)--Match Number 1014 AGENCY: Social Security Administration... regarding protections for such persons. The Privacy Act, as amended, regulates the use of computer matching....C. 552a, as amended, and the provisions of the Computer Matching and Privacy Protection Act of 1988...

Technical performance and match-to-match variation in elite football teams.

PubMed

Liu, Hongyou; Gómez, Miguel-Angel; Gonçalves, Bruno; Sampaio, Jaime

2016-01-01

Recent research suggests that match-to-match variation adds important information to performance descriptors in team sports, as it helps measure how players fine-tune their tactical behaviours and technical actions to the extreme dynamical environments. The current study aims to identify the differences in technical performance of players from strong and weak teams and to explore match-to-match variation of players' technical match performance. Performance data of all the 380 matches of season 2012-2013 in the Spanish First Division Professional Football League were analysed. Twenty-one performance-related match actions and events were chosen as variables in the analyses. Players' technical performance profiles were established by unifying count values of each action or event of each player per match into the same scale. Means of these count values of players from Top3 and Bottom3 teams were compared and plotted into radar charts. Coefficient of variation of each match action or event within a player was calculated to represent his match-to-match variation of technical performance. Differences in the variation of technical performances of players across different match contexts (team and opposition strength, match outcome and match location) were compared. All the comparisons were achieved by the magnitude-based inferences. Results showed that technical performances differed between players of strong and weak teams from different perspectives across different field positions. Furthermore, the variation of the players' technical performance is affected by the match context, with effects from team and opposition strength greater than effects from match location and match outcome.

Methods To Determine the Silicone Oil Layer Thickness in Sprayed-On Siliconized Syringes.

PubMed

Loosli, Viviane; Germershaus, Oliver; Steinberg, Henrik; Dreher, Sascha; Grauschopf, Ulla; Funke, Stefanie

2018-01-01

The silicone lubricant layer in prefilled syringes has been investigated with regards to siliconization process performance, prefilled syringe functionality, and drug product attributes, such as subvisible particle levels, in several studies in the past. However, adequate methods to characterize the silicone oil layer thickness and distribution are limited, and systematic evaluation is missing. In this study, white light interferometry was evaluated to close this gap in method understanding. White light interferometry demonstrated a good accuracy of 93-99% for MgF 2 coated, curved standards covering a thickness range of 115-473 nm. Thickness measurements for sprayed-on siliconized prefilled syringes with different representative silicone oil distribution patterns (homogeneous, pronounced siliconization at flange or needle side, respectively) showed high instrument (0.5%) and analyst precision (4.1%). Different white light interferometry instrument parameters (autofocus, protective shield, syringe barrel dimensions input, type of non-siliconized syringe used as base reference) had no significant impact on the measured average layer thickness. The obtained values from white light interferometry applying a fully developed method (12 radial lines, 50 mm measurement distance, 50 measurements points) were in agreement with orthogonal results from combined white and laser interferometry and 3D-laser scanning microscopy. The investigated syringe batches (lot A and B) exhibited comparable longitudinal silicone oil layer thicknesses ranging from 170-190 nm to 90-100 nm from flange to tip and homogeneously distributed silicone layers over the syringe barrel circumference (110- 135 nm). Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. A silicone oil layer thickness of 100-200 nm was thus sufficient for adequate functionality in this particular study. Filling the syringe with a surrogate solution including short

Improved toughness of silicon carbide

NASA Technical Reports Server (NTRS)

Palm, J. A.

1976-01-01

Impact energy absorbing layers (EALs) comprised of partially densified silicon carbide were formed in situ on fully sinterable silicon carbide substrates. After final sintering, duplex silicon carbide structures resulted which were comprised of a fully sintered, high density silicon carbide substrate or core, overlayed with an EAL of partially sintered silicon carbide integrally bonded to its core member. Thermal cycling tests proved such structures to be moderately resistant to oxidation and highly resistant to thermal shock stresses. The strength of the developed structures in some cases exceeded but essentially it remained the same as the fully sintered silicon carbide without the EAL. Ballistic impact tests indicated that substantial improvements in the toughness of sintered silicon carbide were achieved by the use of the partially densified silicon carbide EALs.

Fluidized bed silicon deposition from silane

NASA Technical Reports Server (NTRS)

Hsu, George C. (Inventor); Levin, Harry (Inventor); Hogle, Richard A. (Inventor); Praturi, Ananda (Inventor); Lutwack, Ralph (Inventor)

1982-01-01

A process and apparatus for thermally decomposing silicon containing gas for deposition on fluidized nucleating silicon seed particles is disclosed. Silicon seed particles are produced in a secondary fluidized reactor by thermal decomposition of a silicon containing gas. The thermally produced silicon seed particles are then introduced into a primary fluidized bed reactor to form a fluidized bed. Silicon containing gas is introduced into the primary reactor where it is thermally decomposed and deposited on the fluidized silicon seed particles. Silicon seed particles having the desired amount of thermally decomposed silicon product thereon are removed from the primary fluidized reactor as ultra pure silicon product. An apparatus for carrying out this process is also disclosed.

Fluidized bed silicon deposition from silane

NASA Technical Reports Server (NTRS)

Hsu, George (Inventor); Levin, Harry (Inventor); Hogle, Richard A. (Inventor); Praturi, Ananda (Inventor); Lutwack, Ralph (Inventor)

1984-01-01

A process and apparatus for thermally decomposing silicon containing gas for deposition on fluidized nucleating silicon seed particles is disclosed. Silicon seed particles are produced in a secondary fluidized reactor by thermal decomposition of a silicon containing gas. The thermally produced silicon seed particles are then introduced into a primary fluidized bed reactor to form a fludized bed. Silicon containing gas is introduced into the primary reactor where it is thermally decomposed and deposited on the fluidized silicon seed particles. Silicon seed particles having the desired amount of thermally decomposed silicon product thereon are removed from the primary fluidized reactor as ultra pure silicon product. An apparatus for carrying out this process is also disclosed.

Silicone-containing composition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohamed, Mustafa

A silicone-containing composition comprises the reaction product of a first component and an excess of an isocyanate component relative to the first component to form an isocyanated intermediary. The first component is selected from one of a polysiloxane and a silicone resin. The first component includes a carbon-bonded functional group selected from one of a hydroxyl group and an amine group. The isocyanate component is reactive with the carbon-bonded functional group of the first component. The isocyanated intermediary includes a plurality of isocyanate functional groups. The silicone-containing composition comprises the further reaction product of a second component, which is selectedmore » from the other of the polysiloxane and the silicone resin. The second component includes a plurality of carbon-bonded functional groups reactive with the isocyanate functional groups of the isocyanated intermediary for preparing the silicone-containing composition.« less

Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures

NASA Astrophysics Data System (ADS)

Colston, Gerard; Myronov, Maksym

2017-11-01

Cubic silicon carbide (3C-SiC) offers an alternative wide bandgap semiconductor to conventional materials such as hexagonal silicon carbide (4H-SiC) or gallium nitride (GaN) for the detection of UV light and can offer a closely lattice matched virtual substrate for subsequent GaN heteroepitaxy. As 3C-SiC can be heteroepitaxially grown on silicon (Si) substrates its optical properties can be manipulated by controlling the thickness and doping concentrations. The optical properties of 3C-SiC epilayers have been characterized by measuring the transmission of light through suspended membranes. Decreasing the thickness of the 3C-SiC epilayers is shown to shift the absorbance edge to lower wavelengths, a result of the indirect bandgap nature of silicon carbide. This property, among others, can be exploited to fabricate very low-cost, tuneable 3C-SiC based UV photodetectors. This study investigates the effect of thickness and doping concentration on the optical properties of 3C-SiC epilayers grown at low temperatures by a standard Si based growth process. The results demonstrate the potential photonic applications of 3C-SiC and its heterogeneous integration into the Si industry.

Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

NASA Technical Reports Server (NTRS)

Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

1993-01-01

Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

Silicon halide-alkali metal flames as a source of solar grade silicon

NASA Technical Reports Server (NTRS)

Olsen, D. B.; Miller, W. J.

1979-01-01

The feasibility of using alkali metal-silicon halide diffusion flames to produce solar-grade silicon in large quantities and at low cost is demonstrated. Prior work shows that these flames are stable and that relatively high purity silicon can be produced using Na + SiCl4 flames. Silicon of similar purity is obtained from Na + SiF4 flames although yields are lower and product separation and collection are less thermochemically favored. Continuous separation of silicon from the byproduct alkali salt was demonstrated in a heated graphite reactor. The process was scaled up to reduce heat losses and to produce larger samples of silicon. Reagent delivery systems, scaled by a factor of 25, were built and operated at a production rate of 0.5 kg Si/h. Very rapid reactor heating rates are observed with wall temperatures reaching greater than 2000 K. Heat release parameters were measured using a cooled stainless steel reactor tube. A new reactor was designed.

A comparative study of the constitutive models for silicon carbide

NASA Astrophysics Data System (ADS)

Ding, Jow-Lian; Dwivedi, Sunil; Gupta, Yogendra

2001-06-01

Most of the constitutive models for polycrystalline silicon carbide were developed and evaluated using data from either normal plate impact or Hopkinson bar experiments. At ISP, extensive efforts have been made to gain detailed insight into the shocked state of the silicon carbide (SiC) using innovative experimental methods, viz., lateral stress measurements, in-material unloading measurements, and combined compression shear experiments. The data obtained from these experiments provide some unique information for both developing and evaluating material models. In this study, these data for SiC were first used to evaluate some of the existing models to identify their strength and possible deficiencies. Motivated by both the results of this comparative study and the experimental observations, an improved phenomenological model was developed. The model incorporates pressure dependence of strength, rate sensitivity, damage evolution under both tension and compression, pressure confinement effect on damage evolution, stiffness degradation due to damage, and pressure dependence of stiffness. The model developments are able to capture most of the material features observed experimentally, but more work is needed to better match the experimental data quantitatively.

Low-power bacteriorhodopsin-silicon n-channel metal-oxide field-effect transistor photoreceiver.

PubMed

Shin, Jonghyun; Bhattacharya, Pallab; Yuan, Hao-Chih; Ma, Zhenqiang; Váró, György

2007-03-01

A bacteriorhodopsin (bR)-silicon n-channel metal-oxide field-effect transistor (NMOSFET) monolithically integrated photoreceiver is demonstrated. The bR film is selectively formed on an external gate electrode of the transistor by electrophoretic deposition. A modified biasing circuit is incorporated, which helps to match the resistance of the bR film to the input impedance of the NMOSFET and to shift the operating point of the transistor to coincide with the maximum gain. The photoreceiver exhibits a responsivity of 4.7 mA/W.

Bond Sensitivity to Silicone Contamination

NASA Technical Reports Server (NTRS)

Caldwell, G. A.; Hudson, W. D.; Hudson, W. D.; Cash, Stephen F. (Technical Monitor)

2003-01-01

Currently during fabrication of the Space Shuttle booster rocket motors, the use of silicone and silicone-containing products is prohibited in most applications. Many shop aids and other materials containing silicone have the potential, if they make contact with a bond surface, to transfer some of the silicone to the substrates being bonded. Such transfer could result in a reduction of the bond strength or even failure of the subsequent bonds. This concern is driving the need to understand the effect of silicones and the concentration needed to affect a given bond-line strength. Additionally, as silicone detection methods used for materials acceptance improve what may have gone unnoticed earlier is now being detected. Thus, realistic silicone limits for process materials (below which bond performance is satisfactory) are needed rather than having an absolute no silicone permitted policy.

Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

NASA Technical Reports Server (NTRS)

Mahan, John E.

1990-01-01

Work done during the final report period is presented. The main technical objective was to achieve epitaxial growth on silicon of two semiconducting silicides, ReSi2 and CrSi2. ReSi2 thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi2(100)/Si(001) with ReSi2(010) parallel to Si(110). The lattice matching consists of a common unit mesh of 120 A(sup 2) area, and a mismatch of 1.8 percent. Transmission electron microscopy revealed the existence of rotation twins corresponding to two distinct but equivalent azimuthal orientations of the common unit mesh. MeV He(+) backscattering spectrometry revealed a minimum channeling yield of 2 percent for an approximately 1,500 A thick film grown at 650 C. Although the lateral dimension of the twins is on the order of 100 A, there is a very high degree of alignment between the ReSi2(100) and the Si(001) planes. Highly oriented films of CrSi2 were grown on (111) silicon substrates, with the matching crystallographic faces being CrSi2(001)/Si(111). The reflection high-energy electron diffraction (RHEED) patterns of the films consist of sharp streaks, symmetrically arranged. The predominant azimuthal orientation of the films was determined to be CrSi2(210) parallel to Si(110). This highly desirable heteroepitaxial relationship has been obtained previously by others; it may be described with a common unit mesh of 51 A(sup 2) and mismatch of 0.3 percent. RHEED also revealed the presence of limited film regions of a competing azimuthal orientation, CrSi2(110) parallel to Si(110). A channeling effect for MeV He(+) ions was not found for this material. Potential commercial applications of this research may be found in silicon-integrated infrared detector arrays. Optical characterizations showed that semiconducting ReSi2 is a strong absorber of infrared radiation, with the adsorption constant increasing above 2 x

Silicone-specific blood lymphocyte response in women with silicone breast implants.

PubMed Central

Ojo-Amaize, E A; Conte, V; Lin, H C; Brucker, R F; Agopian, M S; Peter, J B

1994-01-01

A blinded cross-sectional study was carried out with 99 women, 44 of whom had silicone breast implants. Group I consisted of 55 healthy volunteer women without breast implants; group II comprised 13 volunteer women with breast implants or explants who felt healthy; group III comprised 21 volunteer women with breast implants who had chronic fatigue, musculoskeletal symptoms, and skin disorders; and group IV comprised 10 women who had their prostheses explanted but still presented with clinical symptoms similar to those of the women in group III. Proliferative responses of peripheral blood mononuclear cells from all 99 women were measured by [3H]thymidine uptake after exposure to SiO2 silicon, or silicone gel. The levels of proliferative responses were expressed as stimulation indices, which were obtained by dividing the counts per minute of stimulated cells by the counts per minute of unstimulated cells. Abnormal responses to SiO2, silicon, or silicone gel were defined as a stimulation index of > 2.8, > 2.1, or > 2.4, respectively. Abnormal responses were observed in 0% of group I, 15% of group II, 29% of group III, and 30% of group IV (P < 0.0005 for group I versus groups II and IV). Thirty-one percent of symptomatic women with silicone gel breast implants had elevated serum silicon levels ( > 0.18 mg/liter); however, there was no significant correlation between abnormal cellular responses and silicon levels in blood serum, type of implant, time since first implantation, prosthesis explantation, number of implants, or report of implant leakage or rupture.(ABSTRACT TRUNCATED AT 250 WORDS) PMID:8556522

Release and skin distribution of silicone-related compound(s) from a silicone gel sheet in vitro.

PubMed

Shigeki, S; Nobuoka, N; Murakami, T; Ikuta, Y

1999-01-01

The efficacy of topical silicone gel sheeting in prevention and/or reduction of keloids and hypertrophic scars is well recognized. In the present study, we reexamined the possible release of silicone-related compound(s) from a commercially available silicone gel sheet (Cica-Care, Smith and Nephew, Hull, England) in aqueous media in vitro. The silicone gel sheet was also applied on the excised skin surface to examine the possible distribution of silicone-related compounds into the skin in vitro. Silicone-related compounds were measured as silicon by an inductively coupled plasma-atomic emission spectrophotometer. When a piece of silicone gel sheet was placed in phosphate buffer solution (pH 3-9) at 37 degrees C for 7 days, the concentration of silicon in the medium increased with time, depending on the pH of the medium. This indicates that the released silicone-related compounds are water-soluble. When Cica-Care was applied on the surface of excised rat skin, human axilla skin and hypertrophic scars under hydrated conditions in vitro, silicon was detected in all skin samples. Greater distribution was observed in rat skin than in human axilla skin and hypertrophic scars. The release of silicone-related compounds from a silicone gel sheet (Cica-Care) and their distribution into the skin were demonstrated in vitro. Silicone-related compounds distributed into the skin may have pharmacological effects on the skin. Further investigation will be necessary to investigate in detail the action of silicone-related compounds on the proliferation of fibroblasts and excessive production of collagen.

Stability and rheology of dispersions of silicon nitride and silicon carbide

NASA Technical Reports Server (NTRS)

Feke, Donald L.

1987-01-01

The relationship between the surface and colloid chemistry of commercial ultra-fine silicon carbide and silicon nitride powders was examined by a variety of standard characterization techniques and by methodologies especially developed for ceramic dispersions. These include electrokinetic measurement, surface titration, and surface spectroscopies. The effects of powder pretreatment and modification strategies, which can be utilized to augment control of processing characteristics, were monitored with these technologies. Both silicon carbide and nitride were found to exhibit silica-like surface chemistries, but silicon nitride powders possess an additional amine surface functionality. Colloidal characteristics of the various nitride powders in aqueous suspension is believed to be highly dependent on the relative amounts of the two types of surface groups, which in turn is determined by the powder synthesis route. The differences in the apparent colloidal characteristics for silicon nitride powders cannot be attributed to the specific absorption of ammonium ions. Development of a model for the prediction of double-layer characteristics of materials with a hybrid site interface facilitated understanding and prediction of the behavior of both surface charge and surface potential for these materials. The utility of the model in application to silicon nitride powders was demonstrated.

Single-Event Effects in Silicon and Silicon Carbide Power Devices

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

2014-01-01

NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

Growth of silicon carbide crystals on a seed while pulling silicon crystals from a melt

NASA Technical Reports Server (NTRS)

Ciszek, T. F.; Schwuttke, G. H. (Inventor)

1979-01-01

A saturated solution of silicon and an element such as carbon having a segregation coefficient less than unity is formed by placing a solid piece of carbon in a body of molten silicon having a temperature differential decreasing toward the surface. A silicon carbide seed crystal is disposed on a holder beneath the surface of the molten silicon. As a rod or ribbon of silicon is slowly pulled from the melt, a supersaturated solution of carbon in silicon is formed in the vicinity of the seed crystal. Excess carbon is emitted from the solution in the form of silicon carbide which crystallizes on the seed crystal held in the cool region of the melt.

Preparation of composite micro/nano structure on the silicon surface by reactive ion etching: Enhanced anti-reflective and hydrophobic properties

NASA Astrophysics Data System (ADS)

Zeng, Yu; Fan, Xiaoli; Chen, Jiajia; He, Siyu; Yi, Zao; Ye, Xin; Yi, Yougen

2018-05-01

A silicon substrate with micro-pyramid structure (black silicon) is prepared by wet chemical etching and then subjected to reactive ion etching (RIE) in the mixed gas condition of SF6, CHF3 and He. We systematically study the impacts of flow rates of SF6, CHF3 and He, the etching pressure and the etching time on the surface morphology and reflectivity through various characterizations. Meanwhile, we explore and obtain the optimal combination of parameters for the preparation of composite structure that match the RIE process based on the basis of micro-pyramid silicon substrate. The composite sample prepared under the optimum parameters exhibits excellent anti-reflective performance, hydrophobic, self-cleaning and anti-corrosive properties. Based on the above characteristics, the composite micro/nano structure can be applied to solar cells, photodetectors, LEDs, outdoor devices and other important fields.

Silicon carbide-free graphene growth on silicon for lithium-ion battery with high volumetric energy density

PubMed Central

Son, In Hyuk; Hwan Park, Jong; Kwon, Soonchul; Park, Seongyong; Rümmeli, Mark H.; Bachmatiuk, Alicja; Song, Hyun Jae; Ku, Junhwan; Choi, Jang Wook; Choi, Jae-man; Doo, Seok-Gwang; Chang, Hyuk

2015-01-01

Silicon is receiving discernable attention as an active material for next generation lithium-ion battery anodes because of its unparalleled gravimetric capacity. However, the large volume change of silicon over charge–discharge cycles weakens its competitiveness in the volumetric energy density and cycle life. Here we report direct graphene growth over silicon nanoparticles without silicon carbide formation. The graphene layers anchored onto the silicon surface accommodate the volume expansion of silicon via a sliding process between adjacent graphene layers. When paired with a commercial lithium cobalt oxide cathode, the silicon carbide-free graphene coating allows the full cell to reach volumetric energy densities of 972 and 700 Wh l−1 at first and 200th cycle, respectively, 1.8 and 1.5 times higher than those of current commercial lithium-ion batteries. This observation suggests that two-dimensional layered structure of graphene and its silicon carbide-free integration with silicon can serve as a prototype in advancing silicon anodes to commercially viable technology. PMID:26109057

Infrared photocurrent management in monolithic perovskite/silicon heterojunction tandem solar cells by using a nanocrystalline silicon oxide interlayer.

PubMed

Mazzarella, Luana; Werth, Matteo; Jäger, Klaus; Jošt, Marko; Korte, Lars; Albrecht, Steve; Schlatmann, Rutger; Stannowski, Bernd

2018-05-14

We performed optical simulations using hydrogenated nanocrystalline silicon oxide (nc-SiO x :H) as n-doped interlayer in monolithic perovskite/c-Si heterojunction tandem solar cells. Depending on the adjustable value of its refractive index (2.0 - 2.7) and thickness, nc-SiO x :H allows to optically manage the infrared light absorption in the c-Si bottom cell minimizing reflection losses. We give guidelines for nc-SiO x :H optimization in tandem devices in combination with a systematic investigation of the effect of the surface morphology (flat or textured) on the photocurrent density. For full-flat and rear textured devices, we found matched photocurrents higher than 19 and 20 mA/cm 2 , respectively, using a 90 nm nc-SiO x :H interlayer with a refractive index of 2.7.

Porous Silicon Nanowires

PubMed Central

Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

2011-01-01

In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

DOEpatents

Blewer, Robert S.; Gullinger, Terry R.; Kelly, Michael J.; Tsao, Sylvia S.

1991-01-01

A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

Silicone Migration From Baked-on Silicone Layers. Particle Characterization in Placebo and Protein Solutions.

PubMed

Funke, Stefanie; Matilainen, Julia; Nalenz, Heiko; Bechtold-Peters, Karoline; Mahler, Hanns-Christian; Friess, Wolfgang

2016-12-01

A significant number of therapeutic proteins are marketed as pre-filled syringes or other drug/device combination products and have been safely used in these formats for years. Silicone oil, which is used as lubricant, can migrate into the drug product and may interact with therapeutic proteins. In this study, particles in the size range of 0.2-5 μm and ≥1 μm as determined by resonant mass measurement and micro-flow imaging/light obscuration, respectively, resulted from silicone sloughing off the container barrel after agitation. The degree of droplet formation correlated well with the applied baked-on silicone levels of 13 μg and 94 μg per cartridge. Silicone migration was comparable in placebo, 2 mg/mL and 33 mg/mL IgG1 formulations containing 0.04% (w/v) polysorbate 20. Headspace substantially increased the formation of silicone droplets during agitation. The highest particle concentrations reached, however, were still very low compared to numbers described for spray-on siliconized containers. When applying adequate baked-on silicone levels below 100 μg, bake-on siliconization efficiently limits silicone migration into the drug product without compromising device functionality. Copyright © 2016 American Pharmacists Association®. Published by Elsevier Inc. All rights reserved.

Through-silicon via-induced strain distribution in silicon interposer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vianne, B., E-mail: benjamin.vianne@st.com; STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles; Richard, M.-I.

2015-04-06

Strain in silicon induced by Through-Silicon Via (TSV) integration is of particular interest in the frame of the integration of active devices in silicon interposer. Nano-focused X-ray beam diffraction experiments were conducted using synchrotron radiation to investigate the thermally induced strain field in silicon around copper filled TSVs. Measurements were performed on thinned samples at room temperature and during in situ annealing at 400 °C. In order to correlate the 2D strain maps with finite elements analysis, an analytical model was developed, which takes into account beam absorption in the sample for a given diffraction geometry. The strain field along themore » [335] direction is found to be in the 10{sup −5} range at room temperature and around 10{sup −4} at 400 °C. Simulations support the expected plastification in some regions of the TSV during the annealing step.« less

An analog front-end bipolar-transistor integrated circuit for the SDC silicon tracker

NASA Astrophysics Data System (ADS)

Kipnis, I.; Spieler, H.; Collins, T.

1994-08-01

A low-noise, low-power, high-bandwidth, radiation hard, silicon bipolar-transistor full-custom integrated circuit (IC) containing 64 channels of analog signal processing has been developed for the SDC silicon tracker The IC was designed and tested at LBL and was fabricated using AT&T's CBIC-U2, 4 GHz f/sub /spl tau// complementary bipolar technology. Each channel contains the following functions: low-noise preamplification, pulse shaping and threshold discrimination. This is the first iteration of the production analog IC for the SDC silicon tracker. The IC is laid out to directly match the 50 /spl mu/m pitch double-sided silicon strip detector. The chip measures 6.8 mm/spl times/3.1 mm and contains 3,600 transistors. Three stages of amplification provide 180 mV/fC of gain with a 35 nsec peaking time at the comparator input. For a 14 pF detector capacitance, the equivalent noise charge is 1300 el. RMS at a power consumption of 1 mW/channel from a single 3.5 V supply. With the discriminator threshold set to 4 times the noise level, a 16 nsec time-walk for 1.25 to 10 fC signals is achieved using a time-walk compensation network. Irradiation tests at TRIUMF to a /spl Phi/=10/sup 14/ protons/cm/sup 2/ have been performed on the IC, demonstrating the radiation hardness of the complementary bipolar process.

Silicon-on-ceramic process: Silicon sheet growth and device development for the large-area silicon sheet task of the low-cost solar array project

NASA Technical Reports Server (NTRS)

Whitehead, A. B.; Zook, J. D.; Grung, B. L.; Heaps, J. D.; Schmit, F.; Schuldt, S. B.; Chapman, P. W.

1981-01-01

The technical feasibility of producing solar cell quality sheet silicon to meet the DOE 1986 cost goal of 70 cents/watt was investigated. The silicon on ceramic approach is to coat a low cost ceramic substrate with large grain polycrystalline silicon by unidirectional solidification of molten silicon. Results and accomplishments are summarized.

Theoretical considerations for Reaction-Formed Silicon Carbide (RFSC) formation by molten silicon infiltration into slurry-derived preforms

NASA Technical Reports Server (NTRS)

Behrendt, D. R.; Singh, M.

1993-01-01

For reaction-formed silicon carbide (RFSC) ceramics produced by silicon melt infiltration of porous carbon preforms, equations are developed to relate the amount of residual silicon to the initial carbon density. Also, for a slurry derived preform containing both carbon and silicon powder, equations are derived which relate the amount of residual silicon in the RFSC to the relative density of the carbon in the preform and to the amount of silicon powder added to the slurry. For a porous carbon preform that does not have enough porosity to prevent choking-off of the silicon infiltration, these results show that complete silicon infiltration can occur by adding silicon powder to the slurry mixture used to produce these preforms.

Silicon oxidation in fluoride solutions

NASA Technical Reports Server (NTRS)

Sancier, K. M.; Kapur, V.

1980-01-01

Silicon is produced in a NaF, Na2SiF6, and Na matrix when SiF4 is reduced by metallic sodium. Hydrogen is evolved during acid leaching to separate the silicon from the accompanying reaction products, NaF and Na2SiF6. The hydrogen evolution reaction was studied under conditions simulating leaching conditions by making suspensions of the dry silicon powder in aqueous fluoride solutions. The mechanism for the hydrogen evolution is discussed in terms of spontaneous oxidation of silicon resulting from the cooperative effects of (1) elemental sodium in the silicon that reacts with water to remove a protective silica layer, leaving clean reactive silicon, and (2) fluoride in solution that complexes with the oxidized silicon in solution and retards formation of a protective hydrous oxide gel.

Process for producing silicon

DOEpatents

Olson, J.M.; Carleton, K.L.

1982-06-10

A process of producing silicon includes forming an alloy of copper and silicon and positioning the alloy in a dried, molten salt electrolyte to form a solid anode structure therein. An electrically conductive cathode is placed in the electrolyte for plating silicon thereon. The electrolyte is then purified to remove dissolved oxides. Finally, an electrical potential is applied between the anode and cathode in an amount sufficient to form substantially pure silicon on the cathode in the form of substantially dense, coherent deposits.

Process for producing silicon

DOEpatents

Olson, Jerry M.; Carleton, Karen L.

1984-01-01

A process for producing silicon includes forming an alloy of copper and silicon and positioning the alloy in a dried, molten salt electrolyte to form a solid anode structure therein. An electrically conductive cathode is placed in the electrolyte for plating silicon thereon. The electrolyte is then purified to remove dissolved oxides. Finally, an electrical potential is applied between the anode and cathode in an amount sufficient to form substantially pure silicon on the cathode in the form of substantially dense, coherent deposits.

Matching motivation enhancement treatment to client motivation: re-examining the Project MATCH motivation matching hypothesis.

PubMed

Witkiewitz, Katie; Hartzler, Bryan; Donovan, Dennis

2010-08-01

The current study was designed to re-examine the motivation matching hypothesis from Project MATCH using growth mixture modeling, an analytical technique that models variation in individual drinking patterns. Secondary data analyses of data from Project MATCH (n = 1726), a large multi-site alcoholism treatment-matching study. Percentage of drinking days was the primary outcome measure, assessed from 1 month to 12 months following treatment. Treatment assignment, alcohol dependence symptoms and baseline percentage of drinking days were included as covariates. The results provided support for the motivation matching hypothesis in the out-patient sample and among females in the aftercare sample: the majority of individuals with lower baseline motivation had better outcomes if assigned to motivation enhancement treatment (MET) compared to those assigned to cognitive behavioral treatment (CBT). In the aftercare sample there was a moderating effect of gender and alcohol dependence severity, whereby males with lower baseline motivation and greater alcohol dependence drank more frequently if assigned to MET compared to those assigned to CBT. Results from the current study lend partial support to the motivation-matching hypothesis and also demonstrated the importance of moderating influences on treatment matching effectiveness. Based upon these findings, individuals with low baseline motivation in out-patient settings and males with low levels of alcohol dependence or females in aftercare settings may benefit more from motivational enhancement techniques than from cognitive-behavioral techniques.

Highly efficient luminescent solar concentrators based on earth-abundant indirect-bandgap silicon quantum dots

NASA Astrophysics Data System (ADS)

Meinardi, Francesco; Ehrenberg, Samantha; Dhamo, Lorena; Carulli, Francesco; Mauri, Michele; Bruni, Francesco; Simonutti, Roberto; Kortshagen, Uwe; Brovelli, Sergio

2017-02-01

Building-integrated photovoltaics is gaining consensus as a renewable energy technology for producing electricity at the point of use. Luminescent solar concentrators (LSCs) could extend architectural integration to the urban environment by realizing electrode-less photovoltaic windows. Crucial for large-area LSCs is the suppression of reabsorption losses, which requires emitters with negligible overlap between their absorption and emission spectra. Here, we demonstrate the use of indirect-bandgap semiconductor nanostructures such as highly emissive silicon quantum dots. Silicon is non-toxic, low-cost and ultra-earth-abundant, which avoids the limitations to the industrial scaling of quantum dots composed of low-abundance elements. Suppressed reabsorption and scattering losses lead to nearly ideal LSCs with an optical efficiency of η = 2.85%, matching state-of-the-art semi-transparent LSCs. Monte Carlo simulations indicate that optimized silicon quantum dot LSCs have a clear path to η > 5% for 1 m2 devices. We are finally able to realize flexible LSCs with performances comparable to those of flat concentrators, which opens the way to a new design freedom for building-integrated photovoltaics elements.

Silicon-graphene photonic devices

NASA Astrophysics Data System (ADS)

Yin, Yanlong; Li, Jiang; Xu, Yang; Tsang, Hon Ki; Dai, Daoxin

2018-06-01

Silicon photonics has attracted much attention because of the advantages of CMOS (complementary-metal-oxide-semiconductor) compatibility, ultra-high integrated density, etc. Great progress has been achieved in the past decades. However, it is still not easy to realize active silicon photonic devices and circuits by utilizing the material system of pure silicon due to the limitation of the intrinsic properties of silicon. Graphene has been regarded as a promising material for optoelectronics due to its unique properties and thus provides a potential option for realizing active photonic integrated devices on silicon. In this paper, we present a review on recent progress of some silicon-graphene photonic devices for photodetection, all-optical modulation, as well as thermal-tuning. Project supported by the National Major Research and Development Program (No. 2016YFB0402502), the National Natural Science Foundation of China (Nos. 11374263, 61422510, 61431166001, 61474099, 61674127), and the National Key Research and Development Program (No. 2016YFA0200200).

Modelling relationships between match events and match outcome in elite football.

PubMed

Liu, Hongyou; Hopkins, Will G; Gómez, Miguel-Angel

2016-08-01

Identifying match events that are related to match outcome is an important task in football match analysis. Here we have used generalised mixed linear modelling to determine relationships of 16 football match events and 1 contextual variable (game location: home/away) with the match outcome. Statistics of 320 close matches (goal difference ≤ 2) of season 2012-2013 in the Spanish First Division Professional Football League were analysed. Relationships were evaluated with magnitude-based inferences and were expressed as extra matches won or lost per 10 close matches for an increase of two within-team or between-team standard deviations (SD) of the match event (representing effects of changes in team values from match to match and of differences between average team values, respectively). There was a moderate positive within-team effect from shots on target (3.4 extra wins per 10 matches; 99% confidence limits ±1.0), and a small positive within-team effect from total shots (1.7 extra wins; ±1.0). Effects of most other match events were related to ball possession, which had a small negative within-team effect (1.2 extra losses; ±1.0) but a small positive between-team effect (1.7 extra wins; ±1.4). Game location showed a small positive within-team effect (1.9 extra wins; ±0.9). In analyses of nine combinations of team and opposition end-of-season rank (classified as high, medium, low), almost all between-team effects were unclear, while within-team effects varied depending on the strength of team and opposition. Some of these findings will be useful to coaches and performance analysts when planning training sessions and match tactics.

Silicon on ceramic process. Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project

NASA Technical Reports Server (NTRS)

Zook, J. D.; Heaps, J. D.; Maciolek, R. B.; Koepke, B. G.; Butter, C. D.; Schuldt, S. B.

1977-01-01

The technical and economic feasibility of producing solar-cell-quality sheet silicon was investigated. The sheets were made by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Significant progress was made in all areas of the program.

Electrodeposition of molten silicon

DOEpatents

De Mattei, Robert C.; Elwell, Dennis; Feigelson, Robert S.

1981-01-01

Silicon dioxide is dissolved in a molten electrolytic bath, preferably comprising barium oxide and barium fluoride. A direct current is passed between an anode and a cathode in the bath to reduce the dissolved silicon dioxide to non-alloyed silicon in molten form, which is removed from the bath.

Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers

NASA Astrophysics Data System (ADS)

Cunning, Benjamin V.; Ahmed, Mohsin; Mishra, Neeraj; Ranjbar Kermany, Atieh; Wood, Barry; Iacopi, Francesca

2014-08-01

Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices.

Process for purification of silicon

NASA Technical Reports Server (NTRS)

Rath, H. J.; Sirtl, E.; Pfeiffer, W.

1981-01-01

The purification of metallurgically pure silicon having a silicon content of more than 95% by weight is accomplished by leaching with an acidic solution which substantially does not attack silicon. A mechanical treatment leading to continuous particle size reduction of the granulated silicon to be purified is combined with the chemical purification step.

Cleanroom Garment Silicone Contamination

NASA Technical Reports Server (NTRS)

Geer, Wayne; Lepage, Colette

2006-01-01

The slide presentation reviews actions taken at Goddard Space Flight Center (GSFC) to eliminate contamination by silicone in clean rooms. Background information includes facilities and hardware affected by silicon contamination, a discussion of the negative aspects of silicone contamination, clean room garments, and how the problem was identified at GSFC. Actions taken by the GSFC Contamination Engineering Group and lessons learned are detailed. Results include: awareness of the silicone issue in laundry, increase in infrastructure and support of the testing lab, establishment of protocols for garment verification, closer relationship established with laundry and converter, specifications for laundry services and garments were strengthened, all consumables are tested before use in clean rooms, and established procedures were used to identify and treat silicone found on face masks.

Improved toughness of silicon carbide

NASA Technical Reports Server (NTRS)

Palm, J. A.

1975-01-01

Several techniques were employed to apply or otherwise form porous layers of various materials on the surface of hot-pressed silicon carbide ceramic. From mechanical properties measurements and studies, it was concluded that although porous layers could be applied to the silicon carbide ceramic, sufficient damage was done to the silicon carbide surface by the processing required so as to drastically reduce its mechanical strength. It was further concluded that there was little promise of success in forming an effective energy absorbing layer on the surface of already densified silicon carbide ceramic that would have the mechanical strength of the untreated or unsurfaced material. Using a process for the pressureless sintering of silicon carbide powders it was discovered that porous layers of silicon carbide could be formed on a dense, strong silicon carbide substrate in a single consolidation process.

High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Antoniadis, H.

Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink highmore » efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.« less

[Study of purity tests for silicone resins].

PubMed

Sato, Kyoko; Otsuki, Noriko; Ohori, Akio; Chinda, Mitsuru; Furusho, Noriko; Osako, Tsutomu; Akiyama, Hiroshi; Kawamura, Yoko

2012-01-01

In the 8th edition of Japan's Specifications and Standards for Food Additives, the purity test for silicone resins requires the determination of the refractive index and kinetic viscosity of the extracted silicone oil, and allows for only a limited amount of silicon dioxide. In the purity test, carbon tetrachloride is used to separate the silicone oil and silicon dioxide. To exclude carbon tetrachloride, methods were developed for separating the silicone oil and silicon dioxide from silicone resin, which use hexane and 10% n-dodecylbenzenesulfonic acid in hexane. For silicone oil, the measured refractive index and kinetic viscosity of the silicone oil obtained from the hexane extract were shown to be equivalent to those of the intact silicone oil. In regard to silicon dioxide, it was confirmed that, following the separation with 10% n-dodecylbenzenesulfonic acid in hexane, the level of silicon dioxide in silicone resin can be accurately determined. Therefore, in this study, we developed a method for testing the purity of silicone resins without the use of carbon tetrachloride, which is a harmful reagent.

Silicon web process development

NASA Technical Reports Server (NTRS)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Skutch, M. E.; Driggers, J. M.; Hopkins, R. H.

1981-01-01

The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

Incorporation of dopant impurities into a silicon oxynitride matrix containing silicon nanocrystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ehrhardt, Fabien; Muller, Dominique; Slaoui, Abdelilah, E-mail: abdelilah.slaoui@unistra.fr

2016-05-07

Dopant impurities, such as gallium (Ga), indium (In), and phosphorus (P), were incorporated into silicon-rich silicon oxynitride (SRSON) thin films by the ion implantation technique. To form silicon nanoparticles, the implanted layers were thermally annealed at temperatures up to 1100 °C for 60 min. This thermal treatment generates a phase separation of the silicon nanoparticles from the SRSON matrix in the presence of the dopant atoms. We report on the position of the dopant species within the host matrix and relative to the silicon nanoparticles, as well as on the effect of the dopants on the crystalline structure and the size ofmore » the Si nanoparticles. The energy-filtered transmission electron microscopy technique is thoroughly used to identify the chemical species. The distribution of the dopant elements within the SRSON compound is determined using Rutherford backscattering spectroscopy. Energy dispersive X-ray mapping coupled with spectral imaging of silicon plasmons was performed to spatially localize at the nanoscale the dopant impurities and the silicon nanoparticles in the SRSON films. Three different behaviors were observed according to the implanted dopant type (Ga, In, or P). The In-doped SRSON layers clearly showed separated nanoparticles based on indium, InOx, or silicon. In contrast, in the P-doped SRSON layers, Si and P are completely miscible. A high concentration of P atoms was found within the Si nanoparticles. Lastly, in Ga-doped SRSON the Ga atoms formed large nanoparticles close to the SRSON surface, while the Si nanoparticles were localized in the bulk of the SRSON layer. In this work, we shed light on the mechanisms responsible for these three different behaviors.« less

Gigascale Silicon Photonic Transmitters Integrating HBT-based Carrier-injection Electroabsorption Modulator Structures

NASA Astrophysics Data System (ADS)

Fu, Enjin

injection modulators and light-emitting diodes (LED) with drive voltage requirements below 1.5V. Measurement results show an optical link based on a 70MHz red LED work well at 300Mbps by using the pre-emphasis driver module. A traveling wave electrode (TWE) modulator structure is presented, including a novel design methodology to address process limitations imposed by a commercial silicon fabrication technology. Results from 3D full wave EM simulation demonstrate the application of the design methodology to achieve specifications, including phase velocity matching, insertion loss, and impedance matching. Results show the HBT-based TWE-EAM system has the bandwidth higher than 60GHz.

Method for one-to-one polishing of silicon nitride and silicon oxide

NASA Technical Reports Server (NTRS)

Babu, Suryadevara V. (Inventor); Natarajan, Anita (Inventor)

2009-01-01

The present invention provides a method of removing silicon nitride at about the same removal rate as silicon dioxide by CMP. The method utilizes a polishing slurry that includes colloidal silica abrasive particles dispersed in water and additives that modulate the silicon dioxide and silicon nitride removal rates such that they are about the same. In one embodiment of the invention, the additive is lysine or lysine mono hydrochloride in combination with picolinic acid, which is effective at a pH of about 8. In another embodiment of the invention, the additive is arginine in combination with picolinic acid, which is effective at a pH of about 10.

Selective formation of porous silicon

NASA Technical Reports Server (NTRS)

Fathauer, Jones (Inventor)

1993-01-01

A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H20. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

Selective formation of porous silicon

NASA Technical Reports Server (NTRS)

Fathauer, Robert W. (Inventor); Jones, Eric W. (Inventor)

1993-01-01

A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H2O. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

Workshop summary: New silicon cells

NASA Technical Reports Server (NTRS)

Meulenberg, A.; Iles, P. A.

1993-01-01

The workshop on new silicon cells held during SPRAT12 is summarized. A smaller than average group attended this workshop reflecting the reduction in research dollars available to this portion of the photovoltaics community. Despite the maturity of the silicon technology, a core of the group maintained an excitement about new developments and potential opportunities. The group addressed both the implications and the applications of recent developments. Topics discussed include: light trapping and ultrathin silicon cells; different uses for silicon cells; new silicon cell developments; and radiation tolerant high efficiency cells.

EPITAXIAL GROWTH OF SILICON

DTIC Science & Technology

Epitaxial growth of silicon on a silicon substrate by hydrogen reduction of SiCl4 was investigated. The chemical and physical processes involved in...silicon layers were produced at temperatures between 1100 and 1300 C. The effects of the concentration of SiCl4 in H2, the flow rate of the gas, the

Polycrystalline La1-xSrxMnO3 films on silicon: Influence of post-Deposition annealing on structural, (Magneto-)Optical, and (Magneto-)Electrical properties

NASA Astrophysics Data System (ADS)

Thoma, Patrick; Monecke, Manuel; Buja, Oana-Maria; Solonenko, Dmytro; Dudric, Roxana; Ciubotariu, Oana-Tereza; Albrecht, Manfred; Deac, Iosif G.; Tetean, Romulus; Zahn, Dietrich R. T.; Salvan, Georgeta

2018-01-01

The integration of La1-xSrxMnO3 (LSMO) thin film technology into established industrial silicon processes is regarded as challenging due to lattice mismatch, thermal expansion, and chemical reactions at the interface of LSMO and silicon. In this work, we investigated the physical properties of thin La0.73Sr0.27MnO3 films deposited by magnetron sputtering on silicon without a lattice matching buffer layer. The influence of a post-deposition annealing treatment on the structural, (magneto-)optical, and (magneto-)electrical properties was investigated by a variety of techniques. Using Rutherford backscattering spectroscopy, atomic force microscopy, Raman spectroscopy, and X-ray diffraction we could show that the thin films exhibit a polycrystalline, rhombohedral structure after a post-deposition annealing of at least 700 °C. The dielectric tensor in the spectral range from 1.7 eV to 5 eV determined from spectroscopic ellipsometry in combination with magneto-optical Kerr effect spectroscopy was found to be comparable to that of lattice matched films on single crystal substrates reported in literature [1]. The values of the metal-isolator transition temperature and temperature-dependent resistivities also reflect a high degree of crystalline quality of the thermally treated films.

A novel preparation method for silicone oil nanoemulsions and its application for coating hair with silicone

PubMed Central

Hu, Zhenhua; Liao, Meiling; Chen, Yinghui; Cai, Yunpeng; Meng, Lele; Liu, Yajun; Lv, Nan; Liu, Zhenguo; Yuan, Weien

2012-01-01

Background Silicone oil, as a major component in conditioner, is beneficial in the moisture preservation and lubrication of hair. However, it is difficult for silicone oil to directly absorb on the hair surface because of its hydrophobicity. Stable nanoemulsions containing silicone oil may present as a potential solution to this problem. Methods Silicone oil nanoemulsions were prepared using the oil-in-water method with nonionic surfactants. Emulsion particle size and distribution were characterized by scanning electron microscopy. The kinetic stability of this nanoemulsion system was investigated under accelerated stability tests and long-term storage. The effect of silicone oil deposition on hair was examined by analyzing the element of hair after treatment of silicone oil nanoemulsions. Results Nonionic surfactants such as Span 80 and Tween 80 are suitable emulsifiers to prepare oil-in-water nanoemulsions that are both thermodynamically stable and can enhance the absorption of silicone oil on hair surface. Conclusion The silicone oil-in-water nanoemulsions containing nonionic surfactants present as a promising solution to improve the silicone oil deposition on the hair surface for hair care applications. PMID:23166436

Aquaporins Mediate Silicon Transport in Humans.

PubMed

Garneau, Alexandre P; Carpentier, Gabriel A; Marcoux, Andrée-Anne; Frenette-Cotton, Rachelle; Simard, Charles F; Rémus-Borel, Wilfried; Caron, Luc; Jacob-Wagner, Mariève; Noël, Micheline; Powell, Jonathan J; Bélanger, Richard; Côté, François; Isenring, Paul

2015-01-01

In animals, silicon is an abundant and differentially distributed trace element that is believed to play important biological functions. One would thus expect silicon concentrations in body fluids to be regulated by silicon transporters at the surface of many cell types. Curiously, however, and even though they exist in plants and algae, no such transporters have been identified to date in vertebrates. Here, we show for the first time that the human aquaglyceroporins, i.e., AQP3, AQP7, AQP9 and AQP10 can act as silicon transporters in both Xenopus laevis oocytes and HEK-293 cells. In particular, heterologously expressed AQP7, AQP9 and AQP10 are all able to induce robust, saturable, phloretin-sensitive silicon transport activity in the range that was observed for low silicon rice 1 (lsi1), a silicon transporter in plant. Furthermore, we show that the aquaglyceroporins appear as relevant silicon permeation pathways in both mice and humans based on 1) the kinetics of substrate transport, 2) their presence in tissues where silicon is presumed to play key roles and 3) their transcriptional responses to changes in dietary silicon. Taken together, our data provide new evidence that silicon is a potentially important biological element in animals and that its body distribution is regulated. They should open up original areas of investigations aimed at deciphering the true physiological role of silicon in vertebrates.

Low loss poly-silicon for high performance capacitive silicon modulators.

PubMed

Douix, Maurin; Baudot, Charles; Marris-Morini, Delphine; Valéry, Alexia; Fowler, Daivid; Acosta-Alba, Pablo; Kerdilès, Sébastien; Euvrard, Catherine; Blanc, Romuald; Beneyton, Rémi; Souhaité, Aurélie; Crémer, Sébastien; Vulliet, Nathalie; Vivien, Laurent; Boeuf, Frédéric

2018-03-05

Optical properties of poly-silicon material are investigated to be integrated in new silicon photonics devices, such as capacitive modulators. Test structure fabrication is done on 300 mm wafer using LPCVD deposition: 300 nm thick amorphous silicon layers are deposited on thermal oxide, followed by solid phase crystallization anneal. Rib waveguides are fabricated and optical propagation losses measured at 1.31 µm. Physical analysis (TEM ASTAR, AFM and SIMS) are used to assess the origin of losses. Optimal deposition and annealing conditions have been defined, resulting in 400 nm-wide rib waveguides with only 9.2-10 dB/cm losses.

Silicon isotope fractionation in bamboo and its significance to the biogeochemical cycle of silicon

NASA Astrophysics Data System (ADS)

Ding, T. P.; Zhou, J. X.; Wan, D. F.; Chen, Z. Y.; Wang, C. Y.; Zhang, F.

2008-03-01

A systematic investigation on silica contents and silicon isotope compositions of bamboos was undertaken. Seven bamboo plants and related soils were collected from seven locations in China. The roots, stem, branch and leaves for each plant were sampled and their silica contents and silicon isotope compositions were determined. The silica contents and silicon isotope compositions of bulk and water-soluble fraction of soils were also measured. The silica contents of studied bamboo organs vary from 0.30% to 9.95%. Within bamboo plant the silica contents show an increasing trend from stem, through branch, to leaves. In bamboo roots the silica is exclusively in the endodermis cells, but in stem, branch and leaves, the silica is accumulated mainly in epidermal cells. The silicon isotope compositions of bamboos exhibit significant variation, from -2.3‰ to 1.8‰, and large and systematic silicon isotope fractionation was observed within each bamboo. The δ 30Si values decrease from roots to stem, but then increase from stem, through branch, to leaves. The ranges of δ 30Si values within each bamboo vary from 1.0‰ to 3.3‰. Considering the total range of silicon isotope composition in terrestrial samples is only 7‰, the observed silicon isotope variation in single bamboo is significant and remarkable. This kind of silicon isotope variation might be caused by isotope fractionation in a Rayleigh process when SiO 2 precipitated in stem, branches and leaves gradually from plant fluid. In this process the Si isotope fractionation factor between dissolved Si and precipitated Si in bamboo ( αpre-sol) is estimated to be 0.9981. However, other factors should be considered to explain the decrease of δ 30Si value from roots to stem, including larger ratio of dissolved H 4SiO 4 to precipitated SiO 2 in roots than in stem. There is a positive correlation between the δ 30Si values of water-soluble fractions in soils and those of bulk bamboos, indicating that the dissolved

Review Application of Nanostructured Black Silicon

NASA Astrophysics Data System (ADS)

Lv, Jian; Zhang, Ting; Zhang, Peng; Zhao, Yingchun; Li, Shibin

2018-04-01

As a widely used semiconductor material, silicon has been extensively used in many areas, such as photodiode, photodetector, and photovoltaic devices. However, the high surface reflectance and large bandgap of traditional bulk silicon restrict the full use of the spectrum. To solve this problem, many methods have been developed. Among them, the surface nanostructured silicon, namely black silicon, is the most efficient and widely used. Due to its high absorption in the wide range from UV-visible to infrared, black silicon is very attractive for using as sensitive layer of photodiodes, photodetector, solar cells, field emission, luminescence, and other photoelectric devices. Intensive study has been performed to understand the enhanced absorption of black silicon as well as the response extended to infrared spectrum range. In this paper, the application of black silicon is systematically reviewed. The limitations and challenges of black silicon material are also discussed. This article will provide a meaningful introduction to black silicon and its unique properties.

Improved room-temperature luminescence of core-shell InGaAs/GaAs nanopillars via lattice-matched passivation

NASA Astrophysics Data System (ADS)

Komolibus, Katarzyna; Scofield, Adam C.; Gradkowski, Kamil; Ochalski, Tomasz J.; Kim, Hyunseok; Huffaker, Diana L.; Huyet, Guillaume

2016-02-01

Optical properties of GaAs/InGaAs/GaAs nanopillars (NPs) grown on GaAs(111)B were investigated. Employment of a mask-etching technique allowed for an accurate control over the geometry of NP arrays in terms of both their diameter and separation. This work describes both the steady-state and time-resolved photoluminescence of these structures as a function of the ensemble geometry, composition of the insert, and various shell compounds. The effects of the NP geometry on a parasitic radiative recombination channel, originating from an overgrown lateral sidewall layer, are discussed. Optical characterization reveals a profound influence of the core-shell lattice mismatch on the carrier lifetime and emission quenching at room temperature. When the lattice-matching conditions are satisfied, an efficient emission from the NP arrays at room temperature and below the band-gap of silicon is observed, clearly highlighting their potential application as emitters in optical interconnects integrated with silicon platforms.

Hall mobility in multicrystalline silicon

NASA Astrophysics Data System (ADS)

Schindler, F.; Geilker, J.; Kwapil, W.; Warta, W.; Schubert, M. C.

2011-08-01

Knowledge of the carrier mobility in silicon is of utmost importance for photovoltaic applications, as it directly influences the diffusion length and thereby the cell efficiency. Moreover, its value is needed for a correct quantitative evaluation of a variety of lifetime measurements. However, models that describe the carrier mobility in silicon are based on theoretical calculations or fits to experimental data in monocrystalline silicon. Multicrystalline (mc) silicon features crystal defects such as dislocations and grain boundaries, with the latter possibly leading to potential barriers through the trapping of charge carriers and thereby influencing the mobility, as shown, for example, by Maruska et al. [Appl. Phys. Lett. 36, 381 (1980)]. To quantify the mobilities in multicrystalline silicon, we performed Hall measurements in p-type mc-Si samples of various resistivities and different crystal structures and compared the data to majority carrier Hall mobilities in p-type monocrystalline floatzone (FZ) silicon. For lack of a model that provides reliable values of the Hall mobility in silicon, an empirical fit similar to existing models for conductivity mobilities is proposed based on Hall measurements of monocrystalline p-type FZ silicon. By comparing the measured Hall mobilities obtained from mc silicon with the corresponding Hall mobilities in monocrystalline silicon of the same resistivity, we found that the mobility reduction due to the presence of crystal defects in mc-Si ranges between 0% and 5% only. Mobility decreases of up to 30% as reported by Peter et al. [Proceedings of the 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain, 1-5 September 2008], or even of a factor of 2 to 3 as detected by Palais et al. [Mater. Sci. Eng. B 102, 184 (2003)], in multicrystalline silicon were not observed.

Fibers based on polyethylene with silicon and silicon carbide nanoparticles

NASA Astrophysics Data System (ADS)

Olkhov, A. A.; Krutikova, A. A.; Kovaleva, A. N.; Rychagov, O. V.; Ischenko, A. A.

2017-12-01

In the paper, fibrous materials based on polyethylene with nanosized silicon and silicon carbide obtained by the plasma chemical method have been obtained. The concentration of nanosilicon nanoparticles was 0.1-1.5%. Fibers absorb UV radiation in the range 200-400 nm. The size of silicon nanoparticles and dispersion in fibers are estimated by X-ray diffraction. It is shown that silicon nanoparticles exert no effect on the formation of the internal structure of the PE matrix. The degree of crystallinity, melting and crystallization temperatures remain constant. The surface properties of films are investigated by triboelectric methods and by determining the wetting angle. The surface properties of composite films do not differ from the properties of PE films with the concentration of nanoparticles from 0.1 to 1.0%. At a 1.5% content of n-SiC, the microrelief of the surface changes, and the friction coefficient of the films increases. The resulting films are recommended for application as a UV protective coating.

Process for making silicon

NASA Technical Reports Server (NTRS)

Levin, Harry (Inventor)

1987-01-01

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Silicone Gel-Filled Breast Implants

MedlinePlus

... and Medical Procedures Implants and Prosthetics Breast Implants Silicone Gel-Filled Breast Implants Share Tweet Linkedin Pin ... sharing options Linkedin Pin it Email Print Description: Silicone gel-filled breast implants have a silicone outer ...

Thermal conductivity and phonon transport properties of silicon using perturbation theory and the environment-dependent interatomic potential

NASA Astrophysics Data System (ADS)

Pascual-Gutiérrez, José A.; Murthy, Jayathi Y.; Viskanta, Raymond

2009-09-01

Silicon thermal conductivities are obtained from the solution of the linearized phonon Boltzmann transport equation without the use of any parameter-fitting. Perturbation theory is used to compute the strength of three-phonon and isotope scattering mechanisms. Matrix elements based on Fermi's golden rule are computed exactly without assuming either average or mode-dependent Grüeisen parameters, and with no underlying assumptions of crystal isotropy. The environment-dependent interatomic potential is employed to describe the interatomic force constants and the perturbing Hamiltonians. A detailed methodology to accurately find three-phonon processes satisfying energy- and momentum-conservation rules is also described. Bulk silicon thermal conductivity values are computed across a range of temperatures and shown to match experimental data very well. It is found that about two-thirds of the heat transport in bulk silicon may be attributed to transverse acoustic modes. Effective relaxation times and mean free paths are computed in order to provide a more complete picture of the detailed transport mechanisms and for use with carrier transport models based on the Boltzmann transport equation.

Vapor Pressure and Evaporation Coefficient of Silicon Monoxide over a Mixture of Silicon and Silica

NASA Technical Reports Server (NTRS)

Ferguson, Frank T.; Nuth, Joseph A., III

2012-01-01

The evaporation coefficient and equilibrium vapor pressure of silicon monoxide over a mixture of silicon and vitreous silica have been studied over the temperature range (1433 to 1608) K. The evaporation coefficient for this temperature range was (0.007 plus or minus 0.002) and is approximately an order of magnitude lower than the evaporation coefficient over amorphous silicon monoxide powder and in general agreement with previous measurements of this quantity. The enthalpy of reaction at 298.15 K for this reaction was calculated via second and third law analyses as (355 plus or minus 25) kJ per mol and (363.6 plus or minus 4.1) kJ per mol respectively. In comparison with previous work with the evaporation of amorphous silicon monoxide powder as well as other experimental measurements of the vapor pressure of silicon monoxide gas over mixtures of silicon and silica, these systems all tend to give similar equilibrium vapor pressures when the evaporation coefficient is correctly taken into account. This provides further evidence that amorphous silicon monoxide is an intimate mixture of small domains of silicon and silica and not strictly a true compound.

Aquaporins Mediate Silicon Transport in Humans

PubMed Central

Garneau, Alexandre P.; Carpentier, Gabriel A.; Marcoux, Andrée-Anne; Frenette-Cotton, Rachelle; Simard, Charles F.; Rémus-Borel, Wilfried; Caron, Luc; Jacob-Wagner, Mariève; Noël, Micheline; Powell, Jonathan J.; Bélanger, Richard; Côté, François; Isenring, Paul

2015-01-01

In animals, silicon is an abundant and differentially distributed trace element that is believed to play important biological functions. One would thus expect silicon concentrations in body fluids to be regulated by silicon transporters at the surface of many cell types. Curiously, however, and even though they exist in plants and algae, no such transporters have been identified to date in vertebrates. Here, we show for the first time that the human aquaglyceroporins, i.e., AQP3, AQP7, AQP9 and AQP10 can act as silicon transporters in both Xenopus laevis oocytes and HEK-293 cells. In particular, heterologously expressed AQP7, AQP9 and AQP10 are all able to induce robust, saturable, phloretin-sensitive silicon transport activity in the range that was observed for low silicon rice 1 (lsi1), a silicon transporter in plant. Furthermore, we show that the aquaglyceroporins appear as relevant silicon permeation pathways in both mice and humans based on 1) the kinetics of substrate transport, 2) their presence in tissues where silicon is presumed to play key roles and 3) their transcriptional responses to changes in dietary silicon. Taken together, our data provide new evidence that silicon is a potentially important biological element in animals and that its body distribution is regulated. They should open up original areas of investigations aimed at deciphering the true physiological role of silicon in vertebrates. PMID:26313002

Surface reaction of silicon chlorides during atomic layer deposition of silicon nitride

NASA Astrophysics Data System (ADS)

Yusup, Luchana L.; Park, Jae-Min; Mayangsari, Tirta R.; Kwon, Young-Kyun; Lee, Won-Jun

2018-02-01

The reaction of precursor with surface active site is the critical step in atomic layer deposition (ALD) process. We performed the density functional theory calculation with DFT-D correction to study the surface reaction of different silicon chloride precursors during the first half cycle of ALD process. SiCl4, SiH2Cl2, Si2Cl6 and Si3Cl8 were considered as the silicon precursors, and an NH/SiNH2*-terminated silicon nitride surface was constructed to model the thermal ALD processes using NH3 as well as the PEALD processes using NH3 plasma. The total energies of the system were calculated for the geometry-optimized structures of physisorption, chemisorption, and transition state. The order of silicon precursors in energy barrier, from lowest to highest, is Si3Cl8 (0.92 eV), Si2Cl6 (3.22 eV), SiH2Cl2 (3.93 eV) and SiCl4 (4.49 eV). Silicon precursor with lower energy barrier in DFT calculation showed lower saturation dose in literature for both thermal and plasma-enhanced ALD of silicon nitride. Therefore, DFT calculation is a promising tool in predicting the reactivity of precursor during ALD process.

Consequences of Atomic Oxygen Interaction With Silicone and Silicone Contamination on Surfaces in Low Earth Orbit

NASA Technical Reports Server (NTRS)

Banks, Bruce A.; deGroh, Kim K.; Rutledge, Sharon K.; Haytas, Christy A.

1999-01-01

The exposure of silicones to atomic oxygen in low Earth orbit causes oxidation of the surface, resulting in conversion of silicone to silica. This chemical conversion increases the elastic modulus of the surface and initiates the development of a tensile strain. Ultimately, with sufficient exposure, tensile strain leads to cracking of the surface enabling the underlying unexposed silicone to be converted to silica resulting in additional depth and extent of cracking. The use of silicone coatings for the protection of materials from atomic oxygen attack is limited because of the eventual exposure of underlying unprotected polymeric material due to deep tensile stress cracking of the oxidized silicone. The use of moderate to high volatility silicones in low Earth orbit has resulted in a silicone contamination arrival at surfaces which are simultaneously being bombarded with atomic oxygen, thus leading to conversion of the silicone contaminant to silica. As a result of these processes, a gradual accumulation of contamination occurs leading to deposits which at times have been up to several microns thick (as in the case of a Mir solar array after 10 years in space). The contamination species typically consist of silicon, oxygen and carbon. which in the synergistic environment of atomic oxygen and UV radiation leads to increased solar absorptance and reduced solar transmittance. A comparison of the results of atomic oxygen interaction with silicones and silicone contamination will be presented based on the LDEF, EOIM-111, Offeq-3 spacecraft and Mir solar array in-space results. The design of a contamination pin-hole camera space experiment which uses atomic oxygen to produce an image of the sources of silicone contamination will also be presented.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

NASA Astrophysics Data System (ADS)

Hussain, Muhammad M.; Rojas, Jhonathan P.; Torres Sevilla, Galo A.

2013-05-01

Today's information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor - heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon - industry's darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%).

An FPGA-Based Silicon Neuronal Network with Selectable Excitability Silicon Neurons

PubMed Central

Li, Jing; Katori, Yuichi; Kohno, Takashi

2012-01-01

This paper presents a digital silicon neuronal network which simulates the nerve system in creatures and has the ability to execute intelligent tasks, such as associative memory. Two essential elements, the mathematical-structure-based digital spiking silicon neuron (DSSN) and the transmitter release based silicon synapse, allow us to tune the excitability of silicon neurons and are computationally efficient for hardware implementation. We adopt mixed pipeline and parallel structure and shift operations to design a sufficient large and complex network without excessive hardware resource cost. The network with 256 full-connected neurons is built on a Digilent Atlys board equipped with a Xilinx Spartan-6 LX45 FPGA. Besides, a memory control block and USB control block are designed to accomplish the task of data communication between the network and the host PC. This paper also describes the mechanism of associative memory performed in the silicon neuronal network. The network is capable of retrieving stored patterns if the inputs contain enough information of them. The retrieving probability increases with the similarity between the input and the stored pattern increasing. Synchronization of neurons is observed when the successful stored pattern retrieval occurs. PMID:23269911

Nanostructured silicon for thermoelectric

NASA Astrophysics Data System (ADS)

Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

2011-06-01

Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

Studies on the reactive melt infiltration of silicon and silicon-molybdenum alloys in porous carbon

NASA Technical Reports Server (NTRS)

Singh, M.; Behrendt, D. R.

1992-01-01

Investigations on the reactive melt infiltration of silicon and silicon-1.7 and 3.2 at percent molybdenum alloys into porous carbon preforms have been carried out by process modeling, differential thermal analysis (DTA) and melt infiltration experiments. These results indicate that the initial pore volume fraction of the porous carbon preform is a critical parameter in determining the final composition of the raction-formed silicon carbide and other residual phases. The pore size of the carbon preform is very detrimental to the exotherm temperatures due to liquid silicon-carbon reactions encountered during the reactive melt infiltration process. A possible mechanism for the liquid silicon-porous (glassy) carbon reaction has been proposed. The composition and microstructure of the reaction-formed silicon carbide has been discussed in terms of carbon preform microstructures, infiltration materials, and temperatures.

1366 Project Silicon: Reclaiming US Silicon PV Leadership

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lorenz, Adam

1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process. The research conducted during Project Silicon led to the first industrial scaling ofmore » 1366’s Direct Wafer™ process – an innovative, US-friendly (efficient, low-labor content) manufacturing process that destroys the main cost barrier limiting silicon PV cost-reductions: the 35-year-old grand challenge of making quality wafers (40% of the cost of modules) without the cost and waste of sawing. The SunPath program made it possible for 1366 Technologies to build its demonstration factory, a key and critical step in the Company’s evolution. The demonstration factory allowed 1366 to build every step of the process flow at production size, eliminating potential risk and ensuring the success of the Company’s subsequent scaling for a 1 GW factory to be constructed in Western New York in 2016 and 2017. Moreover, the commercial viability of the Direct Wafer process and its resulting wafers were established as 1366 formed key strategic partnerships, gained entry into the $8B/year multi-Si wafer market, and installed modules featuring Direct Wafer products – the veritable proving grounds for the technology. The program also contributed to the development of three Generation 3 Direct Wafer furnaces. These furnaces are the platform for copying intelligently and preparing our supply chain – large-scale expansion will not require a bigger machine but more machines. Sun

Investigation of silicon surface passivation by silicon nitride film deposition

NASA Technical Reports Server (NTRS)

Olsen, L. C.

1984-01-01

The use of Sin sub x grown by plasma enhanced chemical vapor deposition (PECVO) for passivating silicon surfaces was studied. The application of PECVO SiN sub x films for passivations of silicon N+/P or P+/N solar cells is of particular interest. This program has involved the following areas of investigation: (1) Establishment of PECVO system and development of procedures for growth of SiN sub x; (2) Optical characterization of SiN sub x films; (3) Characterization of the SiN sub x/Si interface; (4) Surface recombination velocity deduced from photoresponse; (5) Current-Voltage analyses of silicon N+/P cells; and (6) Gated diode device studies.

Comparison of the surface charge behavior of commercial silicon nitride and silicon carbide powders

NASA Technical Reports Server (NTRS)

Whitman, Pamela K.; Feke, Donald L.

1988-01-01

The adsorption and desorption of protons from aqueous solution onto the surfaces of a variety of commercial silicon carbide and silicon nitride powders has been examined using a surface titration methodology. This method provides information on some colloidal characteristics, such as the point of zero charge (pzc) and the variation of proton adsorption with dispersion pH, useful for the prediction of optimal ceramic-processing conditions. Qualitatively, the magnitude of the proton adsorption from solution reveals small differences among all of the materials studied. However, the results show that the pzc for the various silicon nitride powders is affected by the powder synthesis route. Complementary investigations have shown that milling can also act to shift the pzc exhibited by silicon nitride powder. Also, studies of the role of the electrolyte in the development of surface charge have indicated no evidence of specific adsorption of ammonium ion on either silicon nitride or silicon carbide powders.

THTM: A template matching algorithm based on HOG descriptor and two-stage matching

NASA Astrophysics Data System (ADS)

Jiang, Yuanjie; Ruan, Li; Xiao, Limin; Liu, Xi; Yuan, Feng; Wang, Haitao

2018-04-01

We propose a novel method for template matching named THTM - a template matching algorithm based on HOG (histogram of gradient) and two-stage matching. We rely on the fast construction of HOG and the two-stage matching that jointly lead to a high accuracy approach for matching. TMTM give enough attention on HOG and creatively propose a twice-stage matching while traditional method only matches once. Our contribution is to apply HOG to template matching successfully and present two-stage matching, which is prominent to improve the matching accuracy based on HOG descriptor. We analyze key features of THTM and perform compared to other commonly used alternatives on a challenging real-world datasets. Experiments show that our method outperforms the comparison method.

Endoscopic dacryocystorhinostomy without silicone stent.

PubMed

Yeon, Je Yeob; Shim, Woo Sub

2012-06-01

In nasolacrimal duct (NLD) obstruction patients that undergo endoscopic dacryocystorhinostomy (DCR), creation of a patent rhinostomy with adequate epithelialization can be accomplished without a stent. However, in common canalicular obstruction patients, a silicone stent seems to have a beneficial role and to bear more favorable results. The aim of this study was to evaluate the surgical outcome of endoscopic DCR without the use of a silicone stent. In all, 36 patients (41 eyes) who underwent endoscopic DCR were enrolled in this study. The patients were classified into a DCR with silicone stent group and a DCR without silicone stent group. Then each of the groups was subdivided into common canalicular obstruction group and NLD obstruction group. Surgical outcomes were evaluated by postoperative symptom improvement and patency of the rhinostomy under nasal endoscopic exam. The epiphora was improved in 84.2% of the silicone stent group and 81.8% of the non-silicone stent group. Categorized by the level of obstruction, in common canalicular obstruction, the success rate was 84.5% (11/13) in the silicone stent group and 57.1% (4/7) in the no stent group. In NLD obstruction, the success rate was 83.0% (5/6) in the silicone stent group and 93.3% (14/15) in the no stent group.

Defensive strategies in Geranium sylvaticum, Part 2: Roles of water-soluble tannins, flavonoids and phenolic acids against natural enemies.

PubMed

Tuominen, Anu

2013-11-01

Geranium sylvaticum is a common herbaceous plant in Fennoscandia, which has a unique phenolic composition. Ellagitannins, proanthocyanidins, galloylglucoses, gallotannins, galloyl quinic acids and flavonoids possess variable distribution in its different organs. These phenolic compounds are thought to have an important role in plant-herbivore interactions. The aim of this study was to quantify these different water-soluble phenolic compounds and measure the biological activity of the eight organs of G. sylvaticum. Compounds were characterized and quantified using HPLC-DAD/MS, in addition, total proanthocyanidins were determined by BuOH-HCl assay and total phenolics by the Folin-Ciocalteau method. Two in vitro biological activity measurements were used: the prooxidant activity was measured by the browning assay and antioxidant activity by the 2,2-diphenyl-1-picrylhydrazyl (DPPH) radical scavenging assay. Organ extracts were fractionated using column chromatography on Sephadex LH-20 and the activities of fractions was similarly measured to evaluate which polyphenol groups contributed the most to the biological activity of each organ. The data on the activity of fractions were examined by multivariate data analysis. The water-soluble extracts of leaves and pistils, which contained over 30% of the dry weight as ellagitannins, showed the highest pro-oxidant activity among the organ extracts. Fraction analysis revealed that flavonoids and galloyl quinic acids also exhibited high pro-oxidant activity. In contrast, the most antioxidant active organ extracts were those of the main roots and hairy roots that contained high amounts of proanthocyanidins in addition to ellagitannins. Analysis of the fractions showed that especially ellagitannins and galloyl quinic acids have high antioxidant activity. We conclude that G. sylvaticum allocates a significant amount of tannins in those plant parts that are important to the fitness of the plant and susceptible to natural enemies, i

Area Reports. Advanced materials and devices research area. Silicon materials research task, and advanced silicon sheet task

NASA Technical Reports Server (NTRS)

1986-01-01

The objectives of the Silicon Materials Task and the Advanced Silicon Sheet Task are to identify the critical technical barriers to low-cost silicon purification and sheet growth that must be overcome to produce a PV cell substrate material at a price consistent with Flat-plate Solar Array (FSA) Project objectives and to overcome these barriers by performing and supporting appropriate R&D. Progress reports are given on silicon refinement using silane, a chemical vapor transport process for purifying metallurgical grade silicon, silicon particle growth research, and modeling of silane pyrolysis in fluidized-bed reactors.

Porous silicon carbide (SIC) semiconductor device

NASA Technical Reports Server (NTRS)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1996-01-01

Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

Narrow band gap amorphous silicon semiconductors

DOEpatents

Madan, A.; Mahan, A.H.

1985-01-10

Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

Roadmap on silicon photonics

NASA Astrophysics Data System (ADS)

Thomson, David; Zilkie, Aaron; Bowers, John E.; Komljenovic, Tin; Reed, Graham T.; Vivien, Laurent; Marris-Morini, Delphine; Cassan, Eric; Virot, Léopold; Fédéli, Jean-Marc; Hartmann, Jean-Michel; Schmid, Jens H.; Xu, Dan-Xia; Boeuf, Frédéric; O'Brien, Peter; Mashanovich, Goran Z.; Nedeljkovic, M.

2016-07-01

Silicon photonics research can be dated back to the 1980s. However, the previous decade has witnessed an explosive growth in the field. Silicon photonics is a disruptive technology that is poised to revolutionize a number of application areas, for example, data centers, high-performance computing and sensing. The key driving force behind silicon photonics is the ability to use CMOS-like fabrication resulting in high-volume production at low cost. This is a key enabling factor for bringing photonics to a range of technology areas where the costs of implementation using traditional photonic elements such as those used for the telecommunications industry would be prohibitive. Silicon does however have a number of shortcomings as a photonic material. In its basic form it is not an ideal material in which to produce light sources, optical modulators or photodetectors for example. A wealth of research effort from both academia and industry in recent years has fueled the demonstration of multiple solutions to these and other problems, and as time progresses new approaches are increasingly being conceived. It is clear that silicon photonics has a bright future. However, with a growing number of approaches available, what will the silicon photonic integrated circuit of the future look like? This roadmap on silicon photonics delves into the different technology and application areas of the field giving an insight into the state-of-the-art as well as current and future challenges faced by researchers worldwide. Contributions authored by experts from both industry and academia provide an overview and outlook for the silicon waveguide platform, optical sources, optical modulators, photodetectors, integration approaches, packaging, applications of silicon photonics and approaches required to satisfy applications at mid-infrared wavelengths. Advances in science and technology required to meet challenges faced by the field in each of these areas are also addressed together with

Silicon isotope fractionation in rice and cucumber plants over a life cycle: Laboratory studies at different external silicon concentrations

NASA Astrophysics Data System (ADS)

Sun, Yan; Wu, Lianghuan; Li, Xiaoyan; Sun, Li; Gao, Jianfei; Ding, Tiping

2016-11-01

Understanding the variations of silicon isotopes in terrestrial higher plants can be helpful toward elucidating the global biogeochemical silicon cycle. We studied silicon isotope fractionation in rice and cucumber plants over their entire life cycles. These two different silicon-absorbing plants were grown hydroponically at different external silicon concentrations. The ranges of δ30Si values in rice were -1.89‰ to 1.69‰, -1.81‰ to 1.96‰, and -2.08‰ to 2.02‰ at 0.17 mM, 1.70 mM, and 8.50 mM silicon concentrations, respectively. The ranges of δ30Si values in cucumber were -1.38‰ to 1.21‰, -1.33‰ to 1.26‰, and -1.62‰ to 1.40‰ at 0.085 mM, 0.17 mM, and 1.70 mM external silicon concentrations, respectively. A general increasing trend in δ30Si values from lower to upper plant parts reflected the preferential incorporation of lighter silicon isotopes from transpired water to biogenic opal. Furthermore, the active uptake mechanism regulated by several transporters might have also played an important role in the preferential transport of heavy silicon isotopes into aboveground plant parts. This suggested that silicon isotope fractionation in both rice and cucumber was a Rayleigh-like process. The data on δ30Si values for the whole plants and nutrient solutions indicated that biologically mediated silicon isotope fractionation occurred during silicon uptake by roots. At lower external silicon concentrations, heavy silicon isotopes entered plants more readily than light silicon isotopes. Conversely, at higher external silicon concentrations, light silicon isotopes entered plants more readily than heavy silicon isotopes.

Quantum Dot Gate Three-State and Nonvolatile Memory Field-Effect Transistors Using a ZnS/ZnMgS/ZnS Heteroepitaxial Stack as a Tunnel Insulator on Silicon-on-Insulator Substrates

NASA Astrophysics Data System (ADS)

Suarez, Ernesto; Chan, Pik-Yiu; Lingalugari, Murali; Ayers, John E.; Heller, Evan; Jain, Faquir

2013-11-01

This paper describes the use of II-VI lattice-matched gate insulators in quantum dot gate three-state and flash nonvolatile memory structures. Using silicon-on-insulator wafers we have fabricated GeO x -cladded Ge quantum dot (QD) floating gate nonvolatile memory field-effect transistor devices using ZnS-Zn0.95Mg0.05S-ZnS tunneling layers. The II-VI heteroepitaxial stack is nearly lattice-matched and is grown using metalorganic chemical vapor deposition on a silicon channel. This stack reduces the interface state density, improving threshold voltage variation, particularly in sub-22-nm devices. Simulations using self-consistent solutions of the Poisson and Schrödinger equations show the transfer of charge to the QD layers in three-state as well as nonvolatile memory cells.

Method of forming buried oxide layers in silicon

DOEpatents

Sadana, Devendra Kumar; Holland, Orin Wayne

2000-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Engineering functionalized multi-phased silicon/silicon oxide nano-biomaterials to passivate the aggressive proliferation of cancer

PubMed Central

Premnath, P.; Tan, B.; Venkatakrishnan, K.

2015-01-01

Currently, the use of nano silicon in cancer therapy is limited as drug delivery vehicles and markers in imaging, not as manipulative/controlling agents. This is due to limited properties that native states of nano silicon and silicon oxides offers. We introduce nano-functionalized multi-phased silicon/silicon oxide biomaterials synthesized via ultrashort pulsed laser synthesis, with tunable properties that possess inherent cancer controlling properties that can passivate the progression of cancer. This nanostructured biomaterial is composed of individual functionalized nanoparticles made of a homogenous hybrid of multiple phases of silicon and silicon oxide in increasing concentration outwards from the core. The chemical properties of the proposed nanostructure such as number of phases, composition of phases and crystal orientation of each functionalized nanoparticle in the three dimensional nanostructure is defined based on precisely tuned ultrashort pulsed laser-material interaction mechanisms. The amorphous rich phased biomaterial shows a 30 fold (95%) reduction in number of cancer cells compared to bulk silicon in 48 hours. Further, the size of the cancer cells reduces by 76% from 24 to 48 hours. This method exposes untapped properties of combination of multiple phases of silicon oxides and its applications in cancer therapy. PMID:26190009

Initial results for the silicon monolithically interconnected solar cell product

NASA Technical Reports Server (NTRS)

Dinetta, L. C.; Shreve, K. P.; Cotter, J. E.; Barnett, A. M.

1995-01-01

This proprietary technology is based on AstroPower's electrostatic bonding and innovative silicon solar cell processing techniques. Electrostatic bonding allows silicon wafers to be permanently attached to a thermally matched glass superstrate and then thinned to final thicknesses less than 25 micron. These devices are based on the features of a thin, light-trapping silicon solar cell: high voltage, high current, light weight (high specific power) and high radiation resistance. Monolithic interconnection allows the fabrication costs on a per watt basis to be roughly independent of the array size, power or voltage, therefore, the cost effectiveness to manufacture solar cell arrays with output powers ranging from milliwatts up to four watts and output voltages ranging from 5 to 500 volts will be similar. This compares favorably to conventionally manufactured, commercial solar cell arrays, where handling of small parts is very labor intensive and costly. In this way, a wide variety of product specifications can be met using the same fabrication techniques. Prototype solar cells have demonstrated efficiencies greater than 11%. An open-circuit voltage of 5.4 volts, fill factor of 65%, and short-circuit current density of 28 mA/sq cm at AM1.5 illumination are typical. Future efforts are being directed to optimization of the solar cell operating characteristics as well as production processing. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. These features make this proprietary technology an excellent candidate for a large number of consumer products.

Use of free silicon in liquid phase sintering of silicon nitrides and sialons

DOEpatents

Raj, R.; Baik, S.

1985-11-12

This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic. 4 figs.

Use of free silicon in liquid phase sintering of silicon nitrides and sialons

DOEpatents

Raj, Rishi; Baik, Sunggi

1985-11-12

This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic.

Removal of inclusions from silicon

NASA Astrophysics Data System (ADS)

Ciftja, Arjan; Engh, Thorvald Abel; Tangstad, Merete; Kvithyld, Anne; Øvrelid, Eivind Johannes

2009-11-01

The removal of inclusions from molten silicon is necessary to satisfy the purity requirements for solar grade silicon. This paper summarizes two methods that are investigated: (i) settling of the inclusions followed by subsequent directional solidification and (infiltration by ceramic foam filters. Settling of inclusions followed by directional solidification is of industrial importance for production of low-cost solar grade silicon. Filtration is reported as the most efficient method for removal of inclusions from the top-cut silicon scrap.

Vertically aligned silicon microwire arrays of various lengths by repeated selective vapor-liquid-solid growth of n-type silicon/n-type silicon

NASA Astrophysics Data System (ADS)

Ikedo, Akihito; Kawashima, Takahiro; Kawano, Takeshi; Ishida, Makoto

2009-07-01

Repeated vapor-liquid-solid (VLS) growth with Au and PH3-Si2H6 mixture gas as the growth catalyst and silicon source, respectively, was used to construct n-type silicon/n-type silicon wire arrays of various lengths. Silicon wires of various lengths within an array could be grown by employing second growth over the first VLS grown wire. Additionally, the junction at the interface between the first and the second wires were examined. Current-voltage measurements of the wires exhibited linear behavior with a resistance of 850 Ω, confirming nonelectrical barriers at the junction, while bending tests indicated that the mechanical properties of the wire did not change.

Silicon-on ceramic process: Silicon sheet growth and device development for the large-area silicon sheet task of the low-cost solar array project

NASA Technical Reports Server (NTRS)

Grung, B. L.; Heaps, J. D.; Schmit, F. M.; Schuldt, S. B.; Zook, J. D.

1981-01-01

The technical feasibility of producing solar-cell-quality sheet silicon to meet the Department of Energy (DOE) 1986 overall price goal of $0.70/watt was investigated. With the silicon-on-ceramic (SOC) approach, a low-cost ceramic substrate is coated with large-grain polycrystalline silicon by unidirectional solidification of molten silicon. This effort was divided into several areas of investigation in order to most efficiently meet the goals of the program. These areas include: (1) dip-coating; (2) continuous coating designated SCIM-coating, and acronym for Silicon Coating by an Inverted Meniscus (SCIM); (3) material characterization; (4) cell fabrication and evaluation; and (5) theoretical analysis. Both coating approaches were successful in producing thin layers of large grain, solar-cell-quality silicon. The dip-coating approach was initially investigated and considerable effort was given to this technique. The SCIM technique was adopted because of its scale-up potential and its capability to produce more conventiently large areas of SOC.

Study on chemical mechanical polishing of silicon wafer with megasonic vibration assisted.

PubMed

Zhai, Ke; He, Qing; Li, Liang; Ren, Yi

2017-09-01

Chemical mechanical polishing (CMP) is the primary method to realize the global planarization of silicon wafer. In order to improve this process, a novel method which combined megasonic vibration to assist chemical mechanical polishing (MA-CMP) is developed in this paper. A matching layer structure of polishing head was calculated and designed. Silicon wafers are polished by megasonic assisted chemical mechanical polishing and traditional chemical mechanical polishing respectively, both coarse polishing and precision polishing experiments were carried out. With the use of megasonic vibration, the surface roughness values Ra reduced from 22.260nm to 17.835nm in coarse polishing, and the material removal rate increased by approximately 15-25% for megasonic assisted chemical mechanical polishing relative to traditional chemical mechanical polishing. Average Surface roughness values Ra reduced from 0.509nm to 0.387nm in precision polishing. The results show that megasonic assisted chemical mechanical polishing is a feasible method to improve polishing efficiency and surface quality. The material removal and finishing mechanisms of megasonic vibration assisted polishing are investigated too. Copyright © 2017 Elsevier B.V. All rights reserved.

Compensated amorphous silicon solar cell

DOEpatents

Devaud, Genevieve

1983-01-01

An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

Silicon microfabricated beam expander

NASA Astrophysics Data System (ADS)

Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

2015-03-01

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

Silicon production process evaluations

NASA Technical Reports Server (NTRS)

1982-01-01

Engineering design of the third distillation column in the process was accomplished. The initial design is based on a 94.35% recovery of dichlorosilane in the distillate and a 99.9% recovery of trichlorosilane in the bottoms. The specified separation is achieved at a reflux ratio of 15 with 20 trays (equilibrium stages). Additional specifications and results are reported including equipment size, temperatures and pressure. Specific raw material requirements necessary to produce the silicon in the process are presented. The primary raw materials include metallurgical grade silicon, silicon tetrachloride, hydrogen, copper (catalyst) and lime (waste treatment). Hydrogen chloride is produced as by product in the silicon deposition. Cost analysis of the process was initiated during this reporting period.

A general classification of silicon utilizing organisms

NASA Astrophysics Data System (ADS)

Das, P.; Das, S.

2010-12-01

Silicon utilizing organisms may be defined as organisms with high silicon content (≥ 1% dry weight) and they can metabolize silicon with or without demonstrable silicon transporter genes (SIT) in them(Das,2010). Silicon is the second most abundant element in the lithosphere (27.70%) and it is as important as phosphorus and magnesium (0.03%) in the biota. Hydrated silica represents the second most abundant biogenic mineral after carbonate minerals. Silicon is accumulated and metabolized by some prokaryotes, and Si compounds can stimulate the growth of a range of fungi. It is well known that Si is essential for diatoms. In mammals, Si is considered an essential trace element, required in bone, cartilage and connective tissue formation, enzymatic activities and other metabolic processes. Silicon was suggested to act as a phosphoprotein effector in bone. In mammals, Si is also reported to positively influence the immune system and to be required for lymphocyte proliferation. The aqueous chemistry of Si is dominated by silicic acid at biological pH ranges. Monosilicic acid can form stable complexes with organic hydroxy-containing molecules . Biosilica also has been identified associated with various biomolecules including proteins and carbohydrates. There are main seven groups of silicon utilizing organisms belonging to Gram positive bacteria, algae, protozoa, sponges, fungi, lichens, and monocotyledon plants. In each group again all the members are not silicon utilizing organisms, thus selective members in each group are further classified depending their degree of silicon utilization. Important silicon utilizing bacteria are Mycobacteria, Nocardia, Streptomyces, Staphylococcus, Bacillus, Lactobacillus spp. etc., Important silicon utilizing algae are Centrobacillariophyceae, Pennatibacillariophyceae and Chrysophyceae. Many protozoa belonging to Heterokonta, Choanoflagellida, Actinopoda are well known silicon utilizing microorganisms. Hexactinellida ( glass sponges

Corrosion Characteristics of Silicon Carbide and Silicon Nitride

PubMed Central

Munro, R. G.; Dapkunas, S. J.

1993-01-01

The present work is a review of the substantial effort that has been made to measure and understand the effects of corrosion with respect to the properties, performance, and durability of various forms of silicon carbide and silicon nitride. The review encompasses corrosion in diverse environments, usually at temperatures of 1000 °C or higher. The environments include dry and moist oxygen, mixtures of hot gaseous vapors, molten salts, molten metals, and complex environments pertaining to coal ashes and slags. PMID:28053489

On the development status of high performance silicon pore optics for future x-ray telescopes

NASA Astrophysics Data System (ADS)

Kraft, Stefan; Collon, M.; Günther, R.; Partapsing, R.; Beijersbergen, M.; Bavdaz, M.; Lumb, D.; Peacock, A.; Wallace, K.

2017-11-01

Silicon pore optics have been proposed earlier as modular optical X-ray units in large Wolter-I telescopes that would match effective area and resolution requirements imposed by missions such as XEUS. Since then the optics have been developed further and the feasibility of the production of high-performance pore optics has been demonstrated. Optimisation of both the production and the assembly process allowed the generation of optics with larger areas with improved imaging performance. Silicon pore optics can now be manufactured with properties required for future X-ray telescopes. A suitable design that allows the implementation of pore optics into X-ray Optical Units in Wolter-I configuration was recently derived including an appropriate telescope mounting structure with interfaces for the individual components. The development status, the achieved performance and the requirements regarding future mirror production, optics assembly and related metrology for its characterisation are presented.

Extracting Silicon From Sodium-Process Products

NASA Technical Reports Server (NTRS)

Kapur, V.; Sanjurjo, A.; Sancier, K. M.; Nanis, L.

1982-01-01

New acid leaching process purifies silicon produced in reaction between silicon fluoride and sodium. Concentration of sodium fluoride and other impurities and byproducts remaining in silicon are within acceptable ranges for semi-conductor devices. Leaching process makes sodium reduction process more attractive for making large quantities of silicon for solar cells.

Matching weights to simultaneously compare three treatment groups: Comparison to three-way matching

PubMed Central

Yoshida, Kazuki; Hernández-Díaz, Sonia; Solomon, Daniel H.; Jackson, John W.; Gagne, Joshua J.; Glynn, Robert J.; Franklin, Jessica M.

2017-01-01

BACKGROUND Propensity score matching is a commonly used tool. However, its use in settings with more than two treatment groups has been less frequent. We examined the performance of a recently developed propensity score weighting method in the three treatment group setting. METHODS The matching weight method is an extension of inverse probability of treatment weighting (IPTW) that reweights both exposed and unexposed groups to emulate a propensity score matched population. Matching weights can generalize to multiple treatment groups. The performance of matching weights in the three-group setting was compared via simulation to three-way 1:1:1 propensity score matching and IPTW. We also applied these methods to an empirical example that compared the safety of three analgesics. RESULTS Matching weights had similar bias, but better mean squared error (MSE) compared to three-way matching in all scenarios. The benefits were more pronounced in scenarios with a rare outcome, unequally sized treatment groups, or poor covariate overlap. IPTW’s performance was highly dependent on covariate overlap. In the empirical example, matching weights achieved the best balance for 24 out of 35 covariates. Hazard ratios were numerically similar to matching. However, the confidence intervals were narrower for matching weights. CONCLUSIONS Matching weights demonstrated improved performance over three-way matching in terms of MSE, particularly in simulation scenarios where finding matched subjects was difficult. Given its natural extension to settings with even more than three groups, we recommend matching weights for comparing outcomes across multiple treatment groups, particularly in settings with rare outcomes or unequal exposure distributions. PMID:28151746

Thermal and Kerr nonlinear properties of plasma-deposited silicon nitride/ silicon dioxide waveguides.

PubMed

Ikeda, Kazuhiro; Saperstein, Robert E; Alic, Nikola; Fainman, Yeshaiahu

2008-08-18

We introduce and present experimental evaluations of loss and nonlinear optical response in a waveguide and an optical resonator, both implemented with a silicon nitride/ silicon dioxide material platform prepared by plasma-enhanced chemical vapor deposition with dual frequency reactors that significantly reduce the stress and the consequent loss of the devices. We measure a relatively small loss of approximately 4dB/cm in the waveguides. The fabricated ring resonators in add-drop and all-pass arrangements demonstrate quality factors of Q=12,900 and 35,600. The resonators are used to measure both the thermal and ultrafast Kerr nonlinearities. The measured thermal nonlinearity is larger than expected, which is attributed to slower heat dissipation in the plasma-deposited silicon dioxide film. The n2 for silicon nitride that is unknown in the literature is measured, for the first time, as 2.4 x 10(-15)cm(2)/W, which is 10 times larger than that for silicon dioxide.

Colloidal characterization of silicon nitride and silicon carbide

NASA Technical Reports Server (NTRS)

Feke, Donald L.

1986-01-01

The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

Micromachining of silicon carbide on silicon fabricated by low-pressure chemical vapour deposition

NASA Astrophysics Data System (ADS)

Behrens, Ingo; Peiner, Erwin; Bakin, Andrey S.; Schlachetzki, Andreas

2002-07-01

We describe the fabrication of silicon carbide layers for micromechanical applications using low-pressure metal-organic chemical vapour deposition at temperatures below 1000 °C. The layers can be structured by lift-off using silicon dioxide as a sacrificial layer. A large selectivity with respect to silicon can be exploited for bulk micromachining. Thin membranes are fabricated which exhibit high mechanical quality, as necessary for applications in harsh environments.

Pinpoint and bulk electrochemical reduction of insulating silicon dioxide to silicon.

PubMed

Nohira, Toshiyuki; Yasuda, Kouji; Ito, Yasuhiko

2003-06-01

Silicon dioxide (SiO(2)) is conventionally reduced to silicon by carbothermal reduction, in which the oxygen is removed by a heterogeneous-homogeneous reaction sequence at approximately 1,700 degrees C. Here we report pinpoint and bulk electrochemical methods for removing oxygen from solid SiO(2) in a molten CaCl(2) electrolyte at 850 degrees C. This approach involves a 'contacting electrode', in which a metal wire supplies electrons to a selected region of the insulating SiO(2). Bulk reduction of SiO(2) is possible by increasing the number of contacting points. The same method was also demonstrated with molten LiCl-KCl-CaCl(2) at 500 degrees C. The novelty and relative simplicity of this method might lead to new processes in silicon semiconductor technology, as well as in high-purity silicon production. The methodology may be applicable to electrochemical processing of a wide variety of insulating materials, provided that the electrolyte dissolves the appropriate constituent ion(s) of the material.

Enhanced Raman scattering in porous silicon grating.

PubMed

Wang, Jiajia; Jia, Zhenhong; Lv, Changwu

2018-03-19

The enhancement of Raman signal on monocrystalline silicon gratings with varying groove depths and on porous silicon grating were studied for a highly sensitive surface enhanced Raman scattering (SERS) response. In the experiment conducted, porous silicon gratings were fabricated. Silver nanoparticles (Ag NPs) were then deposited on the porous silicon grating to enhance the Raman signal of the detective objects. Results show that the enhancement of Raman signal on silicon grating improved when groove depth increased. The enhanced performance of Raman signal on porous silicon grating was also further improved. The Rhodamine SERS response based on Ag NPs/ porous silicon grating substrates was enhanced relative to the SERS response on Ag NPs/ porous silicon substrates. Ag NPs / porous silicon grating SERS substrate system achieved a highly sensitive SERS response due to the coupling of various Raman enhancement factors.

Aesthetic finger prosthesis with silicone biomaterial

PubMed Central

Raghu, K M; Gururaju, C R; Sundaresh, K J; Mallikarjuna, Rachappa

2013-01-01

The fabrication of finger prosthesis is as much an art as it is science. The ideally constructed prosthesis must duplicate the missing structures so precisely that patients can appear in public without fear of attracting unwanted attraction. A 65-years-old patient reported with loss of his right index finger up to the second phalanx and wanted to get it replaced. An impression of the amputated finger and donor were made. A wax pattern of the prosthesis was fabricated using the donor impression; a trial was performed and flasked. Medical grade silicone was intrinsically stained to match the skin tone, following which it was packed, processed and finished. This clinical report describes a method of attaining retention by selective scoring of the master cast of partially amputated finger to enhance the vacuum effect at par with the proportional distribution of the positive forces on the tissues exerted by the prosthesis. PMID:23975917

Evaluation of Porous Silicon Oxide on Silicon Microcantilevers for Sensitive Detection of Gaseous HF.

PubMed

Wallace, Ryan A; Sepaniak, Michael J; Lavrik, Nickolay V; Datskos, Panos G

2017-06-06

Sensitive detection of harmful chemicals in industrial applications is pertinent to safety. In this work, we demonstrate the use of a sensitive silicon microcantilever (MC) system with a porous silicon oxide layer deposited on the active side of the MCs that have been mechanically manipulated to increase sensitivity. Included is the evaluation of porous silicon oxide present on different geometries of MCs and exposed to varying concentrations of hydrogen fluoride in humid air. Profilometry and the signal generated by the stress-induced porous silicon oxide (PSO) coating and bending of the MC were used as methods of evaluation.

Evaluation of Porous Silicon Oxide on Silicon Microcantilevers for Sensitive Detection of Gaseous HF

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wallace, Ryan A.; Sepaniak, Michael J.; Lavrik, Nickolay V.

Sensitive detection of harmful chemicals in industrial applications is pertinent to safety. In this paper, we demonstrate the use of a sensitive silicon microcantilever (MC) system with a porous silicon oxide layer deposited on the active side of the MCs that have been mechanically manipulated to increase sensitivity. Included is the evaluation of porous silicon oxide present on different geometries of MCs and exposed to varying concentrations of hydrogen fluoride in humid air. Finally, profilometry and the signal generated by the stress-induced porous silicon oxide (PSO) coating and bending of the MC were used as methods of evaluation.

Photo-EMF sensitivity of porous silicon thin layer-crystalline silicon heterojunction to ammonia adsorption.

PubMed

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

PubMed Central

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light. PMID:22319353

Evaluation of Porous Silicon Oxide on Silicon Microcantilevers for Sensitive Detection of Gaseous HF

DOE PAGES

Wallace, Ryan A.; Sepaniak, Michael J.; Lavrik, Nickolay V.; ...

2017-05-10

Sensitive detection of harmful chemicals in industrial applications is pertinent to safety. In this paper, we demonstrate the use of a sensitive silicon microcantilever (MC) system with a porous silicon oxide layer deposited on the active side of the MCs that have been mechanically manipulated to increase sensitivity. Included is the evaluation of porous silicon oxide present on different geometries of MCs and exposed to varying concentrations of hydrogen fluoride in humid air. Finally, profilometry and the signal generated by the stress-induced porous silicon oxide (PSO) coating and bending of the MC were used as methods of evaluation.

Methods for producing silicon carbide fibers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garnier, John E.; Griffith, George W.

Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

Silicon Technologies Adjust to RF Applications

NASA Technical Reports Server (NTRS)

Reinecke Taub, Susan; Alterovitz, Samuel A.

1994-01-01

Silicon (Si), although not traditionally the material of choice for RF and microwave applications, has become a serious challenger to other semiconductor technologies for high-frequency applications. Fine-line electron- beam and photolithographic techniques are now capable of fabricating silicon gate sizes as small as 0.1 micron while commonly-available high-resistivity silicon wafers support low-loss microwave transmission lines. These advances, coupled with the recent development of silicon-germanium (SiGe), arm silicon integrated circuits (ICs) with the speed required for increasingly higher-frequency applications.

A proposal for digital electro-optic switches with free-carrier dispersion effect and Goos-Hanchen shift in silicon-on-insulator waveguide corner mirror

NASA Astrophysics Data System (ADS)

Sun, DeGui

2013-09-01

In a silicon-on-insulator (SOI) waveguide corner mirror (WCM) structure, with the quantum process of a frustrated total internal reflection (FTIR) phenomenon and the time delay principle in the two-dimensional potential barrier tunneling process of a mass of particles, we derive an accurate physical model for the Goos-Hanchen (GH) shift of optical guided-mode in the FTIR process, and in principle match the GH shift jumping states with the independent guided-modes. Then, we propose and demonstrate a new regime of 1 × N digital optical switches with a matching state between the free-carrier dispersion (FCD) based refractive index modulation (RIM) of silicon to create a GH shift jumping function of a photonic signal at the reflecting interface and the independent guided-modes in the FTIR process, where a MOS-capacitor type electro-optic modulation regime is proposed and discussed to realize an effective FCD-based RIM. At the critical matching state, i.e., the incident of an optical beam is at the vicinity of Brewster angle in the WCM, a mini-change of refractive index of waveguide material can cause a great jump of GH shift along the FTIR reflecting interface, and further a 1 × N digital optical switching process could be realized. For a 350-500 nm single-mode rib waveguide made on the 220 nm CMOS-compatible SOI substrate and with the FCD effect based RIM of silicon crystal, a concentration variation of 1018-1019 cm-3 has caused a 0.5-2.5 μm GH shift of reflected beam, which is at 2-5 times of a mode-size and hence radically convinces an optical switching function with a 1 × 3-1 × 10 scale.

Magnetic safety matches

NASA Astrophysics Data System (ADS)

Lindén, J.; Lindberg, M.; Greggas, A.; Jylhävuori, N.; Norrgrann, H.; Lill, J. O.

2017-07-01

In addition to the main ingredients; sulfur, potassium chlorate and carbon, ordinary safety matches contain various dyes, glues etc, giving the head of the match an even texture and appealing color. Among the common reddish-brown matches there are several types, which after ignition can be attracted by a strong magnet. Before ignition the match head is generally not attracted by the magnet. An elemental analysis based on proton-induced x-ray emission was performed to single out iron as the element responsible for the observed magnetism. 57Fe Mössbauer spectroscopy was used for identifying the various types of iron-compounds, present before and after ignition, responsible for the macroscopic magnetism: Fe2O3 before and Fe3O4 after. The reaction was verified by mixing the main chemicals in the match-head with Fe2O3 in glue and mounting the mixture on a match stick. The ash residue after igniting the mixture was magnetic.

Ultrasonic Measurement Of Silicon-Growth Interface

NASA Technical Reports Server (NTRS)

Heyser, Richard C.

1988-01-01

Position of interface between silicon melt and growing ribbon of silicon measured with aid of reflected ultrasound, according to proposal. Reflections reveal characteristics of ribbon and melt. Ultrasound pulses travel through rods to silicon ribbon growing by dendritic-web process. Rods return reflections of pulses to sonic transducers. Isolate transducers thermally, but not acoustically, from hot silicon melt.

Adjustable Lid Aids Silicon-Ribbon Growth

NASA Technical Reports Server (NTRS)

Mchugh, J. P.; Steidensticker, R. G.; Duncan, C. S.

1985-01-01

Closely-spaced crucible cover speeds up solidification. Growth rate of dendritic-web silicon ribbon from molten silicon increased by controlling distance between crucible susceptor lid and liquid/solid interface. Lid held in relatively high position when crucible newly filled with chunks of polycrystalline silicon. As silicon melts and forms pool of liquid at lower level, lid gradually lowered.

High purity silane and silicon production

NASA Technical Reports Server (NTRS)

Breneman, William C. (Inventor)

1987-01-01

Silicon tetrachloride, hydrogen and metallurgical silicon are reacted at about 400.degree.-600.degree. C. and at pressures in excess of 100 psi, and specifically from about 300 up to about 600 psi to form di- and trichlorosilane that is subjected to disproportionation in the presence of an anion exchange resin to form high purity silane. By-product and unreacted materials are recycled, with metallurgical silicon and hydrogen being essentially the only consumed feed materials. The silane product may be further purified, as by means of activated carbon or cryogenic distillation, and decomposed in a fluid bed or free space reactor to form high purity polycrystalline silicon and by-product hydrogen which can be recycled for further use. The process results in simplified waste disposal operations and enhances the overall conversion of metallurgical grade silicon to silane and high purity silicon for solar cell and semiconductor silicon applications.

Synthesis and devolatilization of M-97 NVB silicone gum compounded into silica reinforced silicone base

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schneider, J.W.

1986-06-01

Silica reinforced silicon bases having 0.31 weight percent vinyl content were prepared by using a blend of low and high vinyl content devolatilized M-97 NVB silicone gum. The M-97 NVB is a custom dimethyl-, diphenyl-, methylvinylsiloxane gum. The silicon gum was devolatilized to evaluate the anticipated improved handling characteristics. Previous procured batches of M-97 NVB had not been devolatilized and difficult handling problems were encountered. The synthesis, devolatilization, and compound processes for the M-97 NVB silicone gum are discussed.

Synthesis and characterization of silicon nanorod on n-type porous silicon.

PubMed

Behzad, Kasra; Mat Yunus, Wan Mahmood; Bahrami, Afarin; Kharazmi, Alireza; Soltani, Nayereh

2016-03-20

This work reports a new method for growing semiconductor nanorods on a porous silicon substrate. After preparation of n-type porous silicon samples, a thin layer of gold was deposited on them. Gold deposited samples were annealed at different temperatures. The structural, thermal, and optical properties of the samples were studied using a field emission scanning electron microscope (FESEM), photoacoustic spectroscopy, and photoluminescence spectroscopy, respectively. FESEM analysis revealed that silicon nanorods of different sizes grew on the annealed samples. Thermal behavior of the samples was studied using photoacoustic spectroscopy. Photoluminescence spectroscopy showed that the emission peaks were degraded by gold deposition and attenuated for all samples by annealing.

Determination of Silicon in Hydrazine

NASA Technical Reports Server (NTRS)

McClure, Mark B.; Mast, Dion; Greene, Ben; Maes, Miguel J.

2006-01-01

Inductively coupled plasma-mass spectrometry (ICP-MS) is a highly sensitive technique sometimes used for the trace determination of silicon at a mass-to-charge (m/z) ratio of 28, the most abundant natural isotope of silicon. Unfortunately, ICP-MS is unable to differentiate between other sources of m/z 28 and false positive results for silicon will result when other sources of m/z 28 are present. Nitrogen was a major source of m/z 28 and contributes to the m/z 28 signal when hydrazine sample or nitric acid preservative is introduced into the plasma. Accordingly, this work was performed to develop a sample preparation step coupled with an ICP-MS analysis that minimized non-silicon sources of m/z 28. In the preparatory step of this method, the hydrazine sample was first decomposed predominately to nitrogen gas and water with copper-catalyzed hydrogen peroxide. In the analysis step, ICP-MS was used without nitric acid preservative in samples or standards. Glass, a potential source of silicon contamination, was also avoided where possible. The method was sensitive, accurate, and reliable for the determination of silicon in monopropellant grade hydrazine (MPH) in AF-E-332 elastomer leaching tests. Results for silicon in MPH were comparable to those reported in the literature for other studies.

High specific activity silicon-32

DOEpatents

Phillips, Dennis R.; Brzezinski, Mark A.

1996-01-01

A process for preparation of silicon-32 is provided and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution to from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidization state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

High specific activity silicon-32

DOEpatents

Phillips, D.R.; Brzezinski, M.A.

1996-06-11

A process for preparation of silicon-32 is provided and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidation state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

Silicon quantum dots for energetic material applications

NASA Astrophysics Data System (ADS)

Adams, Sarah K.; Piekiel, Nicholas W.; Ervin, Matthew H.; Morris, Christopher J.

2018-06-01

In its history as an energetic material, porous silicon has demonstrated flame speeds in excess of 3 km s-1, tunable combustion behavior, and high energy output, which in theory makes it a very attractive energetic system. In practice, its application within the field is limited by porous silicon's typical substrate-adhered form and caustic chemical processing requirements that limit how and when porous silicon is made. In this work, we have relieved porous silicon of these constraints by creating reactive silicon quantum dots from free-standing porous silicon films. The resulting material is composed of crystalline silicon nanoparticles with diameters as small as 2 nm that retain the chemical properties of the original films including the SiH2 termination layer. The fabricated silicon particles were characterized using FTIR Spectroscopy, TEM, and EDS for determining the size and the chemical composition. For testing as an energetic material fuel, porous silicon was mixed with an oft used oxidizer, sodium perchlorate. During open-channel combustion tests, silicon quantum dots mixed with sodium perchlorate demonstrated flame speeds over 2.5 km s-1, while bomb calorimetry tests showed an average heat of combustion of 7.4 kJ g-1. These results demonstrate the ability to retain the porous silicon material properties that allow for highly energetic material reactions to occur, despite the additional processing steps to create silicon quantum dots. This opens the door for the use of porous silicon in the bulk of the energetic material application space, much of which was previously limited due to the substrate-attached nature of typical porous silicon.

Silicon nanocrystal inks, films, and methods

DOEpatents

Wheeler, Lance Michael; Kortshagen, Uwe Richard

2015-09-01

Silicon nanocrystal inks and films, and methods of making and using silicon nanocrystal inks and films, are disclosed herein. In certain embodiments the nanocrystal inks and films include halide-terminated (e.g., chloride-terminated) and/or halide and hydrogen-terminated nanocrystals of silicon or alloys thereof. Silicon nanocrystal inks and films can be used, for example, to prepare semiconductor devices.

Process for forming retrograde profiles in silicon

DOEpatents

Weiner, K.H.; Sigmon, T.W.

1996-10-15

A process is disclosed for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

Metallic coatings on silicon substrates, and methods of forming metallic coatings on silicon substrates

DOEpatents

Branagan, Daniel J [Idaho Falls, ID; Hyde, Timothy A [Idaho Falls, ID; Fincke, James R [Los Alamos, NM

2008-03-11

The invention includes methods of forming a metallic coating on a substrate which contains silicon. A metallic glass layer is formed over a silicon surface of the substrate. The invention includes methods of protecting a silicon substrate. The substrate is provided within a deposition chamber along with a deposition target. Material from the deposition target is deposited over at least a portion of the silicon substrate to form a protective layer or structure which contains metallic glass. The metallic glass comprises iron and one or more of B, Si, P and C. The invention includes structures which have a substrate containing silicon and a metallic layer over the substrate. The metallic layer contains less than or equal to about 2 weight % carbon and has a hardness of at least 9.2 GPa. The metallic layer can have an amorphous microstructure or can be devitrified to have a nanocrystalline microstructure.

Chemical vapor deposition of silicon, silicon dioxide, titanium and ferroelectric thin films

NASA Astrophysics Data System (ADS)

Chen, Feng

Various silicon-based thin films (such as epitaxial, polycrystalline and amorphous silicon thin films, silicon dioxide thin films and silicon nitride thin films), titanium thin film and various ferroelectric thin films (such as BaTiO3 and PbTiO3 thin films) play critical roles in the manufacture of microelectronics circuits. For the past few years, there have been tremendous interests to search for cheap, safe and easy-to-use methods to develop those thin films with high quality and good step coverage. Silane is a critical chemical reagent widely used to deposit silicon-based thin films. Despite its wide use, silane is a dangerous material. It is pyrophoric, extremely flammable and may explode from heat, shock and/or friction. Because of the nature of silane, serious safety issues have been raised concerning the use, transportation, and storage of compressed gas cylinders of silane. Therefore it is desired to develop safer ways to deposit silicon-based films. In chapter III, I present the results of our research in the following fields: (1) Silane generator, (2) Substitutes of silane for deposition of silicon and silicon dioxide thin films, (3) Substitutes of silane for silicon dioxide thin film deposition. In chapter IV, hydropyridine is introduced as a new ligand for use in constructing precursors for chemical vapor deposition. Detachement of hydropyridine occurs by a low-temperature reaction leaving hydrogen in place of the hydropyridine ligands. Hydropyridine ligands can be attached to a variety of elements, including main group metals, such as aluminum and antimony, transition metals, such as titanium and tantalum, semiconductors such as silicon, and non-metals such as phosphorus and arsenic. In this study, hydropyridine-containing titanium compounds were synthesized and used as chemical vapor deposition precursors for deposition of titanium containing thin films. Some other titanium compounds were also studied for comparison. In chapter V, Chemical Vapor

Cleaning up Silicon

NASA Technical Reports Server (NTRS)

2000-01-01

A development program that started in 1975 between Union Carbide and JPL, led to Advanced Silicon Materials LLC's, formerly ASiMI, commercial process for producing silane in viable quantities. The process was expanded to include the production of high-purity polysilicon for electronic devices. The technology came out of JPL's Low Cost Silicon Array Project.

Learning graph matching.

PubMed

Caetano, Tibério S; McAuley, Julian J; Cheng, Li; Le, Quoc V; Smola, Alex J

2009-06-01

As a fundamental problem in pattern recognition, graph matching has applications in a variety of fields, from computer vision to computational biology. In graph matching, patterns are modeled as graphs and pattern recognition amounts to finding a correspondence between the nodes of different graphs. Many formulations of this problem can be cast in general as a quadratic assignment problem, where a linear term in the objective function encodes node compatibility and a quadratic term encodes edge compatibility. The main research focus in this theme is about designing efficient algorithms for approximately solving the quadratic assignment problem, since it is NP-hard. In this paper we turn our attention to a different question: how to estimate compatibility functions such that the solution of the resulting graph matching problem best matches the expected solution that a human would manually provide. We present a method for learning graph matching: the training examples are pairs of graphs and the 'labels' are matches between them. Our experimental results reveal that learning can substantially improve the performance of standard graph matching algorithms. In particular, we find that simple linear assignment with such a learning scheme outperforms Graduated Assignment with bistochastic normalisation, a state-of-the-art quadratic assignment relaxation algorithm.

A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

DOE PAGES

Mailoa, Jonathan P.; Bailie, Colin D.; Johlin, Eric C.; ...

2015-03-24

With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband tunnel junction that facilitates majority-carrier charge recombination between the perovskite and silicon sub-cells. We demonstrate a 1 cm 2 2-terminal monolithic perovskite/silicon multijunction solar cell with a V OC as high as 1.65 V. As a result, we achieve a stable 13.7% power conversion efficiency with the perovskite as the current-limiting sub-cell, and identify key challenges for this device architecture to reach efficiencies over 25%.

Polycrystalline silicon on tungsten substrates

NASA Technical Reports Server (NTRS)

Bevolo, A. J.; Schmidt, F. A.; Shanks, H. R.; Campisi, G. J.

1979-01-01

Thin films of electron-beam-vaporized silicon were deposited on fine-grained tungsten substrates under a pressure of about 1 x 10 to the -10th torr. Mass spectra from a quadrupole residual-gas analyzer were used to determine the partial pressure of 13 residual gases during each processing step. During separate silicon depositions, the atomically clean substrates were maintained at various temperatures between 400 and 780 C, and deposition rates were between 20 and 630 A min. Surface contamination and interdiffusion were monitored by in situ Auger electron spectrometry before and after cleaning, deposition, and annealing. Auger depth profiling, X-ray analysis, and SEM in the topographic and channeling modes were utilized to characterize the samples with respect to silicon-metal interface, interdiffusion, silicide formation, and grain size of silicon. The onset of silicide formation was found to occur at approximately 625 C. Above this temperature tungsten silicides were formed at a rate faster than the silicon deposition. Fine-grain silicon films were obtained at lower temperatures.

Traveling wave parametric amplifier with Josephson junctions using minimal resonator phase matching

DOE Office of Scientific and Technical Information (OSTI.GOV)

White, T. C.; Mutus, J. Y.; Hoi, I.-C.

Josephson parametric amplifiers have become a critical tool in superconducting device physics due to their high gain and quantum-limited noise. Traveling wave parametric amplifiers (TWPAs) promise similar noise performance, while allowing for significant increases in both bandwidth and dynamic range. We present a TWPA device based on an LC-ladder transmission line of Josephson junctions and parallel plate capacitors using low-loss amorphous silicon dielectric. Crucially, we have inserted λ/4 resonators at regular intervals along the transmission line in order to maintain the phase matching condition between pump, signal, and idler and increase gain. We achieve an average gain of 12 dB acrossmore » a 4 GHz span, along with an average saturation power of −92 dBm with noise approaching the quantum limit.« less

Solar silicon via improved and expanded metallurgical silicon technology

NASA Technical Reports Server (NTRS)

Hunt, L. P.; Dosaj, V. D.; Mccormick, J. R.

1977-01-01

A completed preliminary survey of silica sources indicates that sufficient quantities of high-purity quartz are available in the U.S. and Canada to meet goals. Supply can easily meet demand for this little-sought commodity. Charcoal, as a reductant for silica, can be purified to a sufficient level by high-temperature fluorocarbon treatment and vacuum processing. High-temperature treatment causes partial graphitization which can lead to difficulty in smelting. Smelting of Arkansas quartz and purified charcoal produced kilogram quantities of silicon having impurity levels generally much lower than in MG-Si. Half of the goal was met of increasing the boron resistivity from 0.03 ohm-cm in metallurgical silicon to 0.3 ohm-cm in solar silicon. A cost analysis of the solidification process indicate $3.50-7.25/kg Si for the Czochralski-type process and $1.50-4.25/kg Si for the Bridgman-type technique.

A bioanalytical microsystem for protein and DNA sensing based on a monolithic silicon optoelectronic transducer

NASA Astrophysics Data System (ADS)

Misiakos, K.; Petrou, P. S.; Kakabakos, S. E.; Ruf, H. H.; Ehrentreich-Förster, E.; Bier, F. F.

2005-01-01

A bioanalytical microsystem that is based on a monolithic silicon optical transducer and a microfluidic module and it is appropriate for real-time sensing of either DNA or protein analytes is presented. The optical transducer monolithically integrates silicon avalanche diodes as light sources, silicon nitride optical fibers and detectors and efficiently intercouples these optical elements through a self-alignment technique. After hydrophilization and silanization of the transducer surface, the biomolecular probes are immobilized through physical adsorption. Detection is performed through reaction of the immobilized biomolecules with gold nanoparticle labeled counterpart molecules. The binding of these molecules within the evanescent field at the surface of the optical fiber cause attenuated total reflection of the waveguided modes and reduction of the detector photocurrent. Using the developed microsystem, determination of single nucleotide polymorphism (SNP) in the gene of the human phenol sulfotransferase SULT1A1 was achieved. Full-matching hybrid resulted in 4-5 times higher signals compared to the mismatched hybrid after hybridization and dissociation processes. The protein sensing abilities of the developed microsystem were also investigated through a non-competitive assay for the determination of the MB isoform of creatine kinase enzyme (CK-MB) that is a widely used cardiac marker.

Process for forming a porous silicon member in a crystalline silicon member

DOEpatents

Northrup, M. Allen; Yu, Conrad M.; Raley, Norman F.

1999-01-01

Fabrication and use of porous silicon structures to increase surface area of heated reaction chambers, electrophoresis devices, and thermopneumatic sensor-actuators, chemical preconcentrates, and filtering or control flow devices. In particular, such high surface area or specific pore size porous silicon structures will be useful in significantly augmenting the adsorption, vaporization, desorption, condensation and flow of liquids and gasses in applications that use such processes on a miniature scale. Examples that will benefit from a high surface area, porous silicon structure include sample preconcentrators that are designed to adsorb and subsequently desorb specific chemical species from a sample background; chemical reaction chambers with enhanced surface reaction rates; and sensor-actuator chamber devices with increased pressure for thermopneumatic actuation of integrated membranes. Examples that benefit from specific pore sized porous silicon are chemical/biological filters and thermally-activated flow devices with active or adjacent surfaces such as electrodes or heaters.

Short Shot Tower for Silicon

NASA Technical Reports Server (NTRS)

Bates, H. E.; Hill, D. M.; Jewett, D. N.

1983-01-01

Drop length necessary to convert molten silicon to shot reduced by proposed new process. Conversion of silicon from powder or chunks to shot often simplifies processing. Shot is more easily handled in most processing equipment. Drops of liquid silicon fall through protective cloud of argon, then through rapidly cooling bath of methanol, where they quickly turn into solid shot.

Quantitative analysis of the thermal requirements for stepwise physical dormancy-break in seeds of the winter annual Geranium carolinianum (Geraniaceae)

PubMed Central

Gama-Arachchige, N. S.; Baskin, J. M.; Geneve, R. L.; Baskin, C. C.

2013-01-01

Background and Aims Physical dormancy (PY)-break in some annual plant species is a two-step process controlled by two different temperature and/or moisture regimes. The thermal time model has been used to quantify PY-break in several species of Fabaceae, but not to describe stepwise PY-break. The primary aims of this study were to quantify the thermal requirement for sensitivity induction by developing a thermal time model and to propose a mechanism for stepwise PY-breaking in the winter annual Geranium carolinianum. Methods Seeds of G. carolinianum were stored under dry conditions at different constant and alternating temperatures to induce sensitivity (step I). Sensitivity induction was analysed based on the thermal time approach using the Gompertz function. The effect of temperature on step II was studied by incubating sensitive seeds at low temperatures. Scanning electron microscopy, penetrometer techniques, and different humidity levels and temperatures were used to explain the mechanism of stepwise PY-break. Key Results The base temperature (Tb) for sensitivity induction was 17·2 °C and constant for all seed fractions of the population. Thermal time for sensitivity induction during step I in the PY-breaking process agreed with the three-parameter Gompertz model. Step II (PY-break) did not agree with the thermal time concept. Q10 values for the rate of sensitivity induction and PY-break were between 2·0 and 3·5 and between 0·02 and 0·1, respectively. The force required to separate the water gap palisade layer from the sub-palisade layer was significantly reduced after sensitivity induction. Conclusions Step I and step II in PY-breaking of G. carolinianum are controlled by chemical and physical processes, respectively. This study indicates the feasibility of applying the developed thermal time model to predict or manipulate sensitivity induction in seeds with two-step PY-breaking processes. The model is the first and most detailed one yet developed for

Hybrid Integrated Platforms for Silicon Photonics

PubMed Central

Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

2010-01-01

A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

Epitaxial growth of silicon for layer transfer

DOEpatents

Teplin, Charles; Branz, Howard M

2015-03-24

Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

Gamma radiation effects on silicon photonic waveguides.

PubMed

Grillanda, Stefano; Singh, Vivek; Raghunathan, Vivek; Morichetti, Francesco; Melloni, Andrea; Kimerling, Lionel; Agarwal, Anuradha M

2016-07-01

To support the use of integrated photonics in harsh environments, such as outer space, the hardness threshold to high-energy radiation must be established. Here, we investigate the effects of gamma (γ) rays, with energy in the MeV-range, on silicon photonic waveguides. By irradiation of high-quality factor amorphous silicon core resonators, we measure the impact of γ rays on the materials incorporated in our waveguide system, namely amorphous silicon, silicon dioxide, and polymer. While we show the robustness of amorphous silicon and silicon dioxide up to an absorbed dose of 15 Mrad, more than 100× higher than previous reports on crystalline silicon, polymer materials exhibit changes with doses as low as 1 Mrad.

Silicon crystal growth in vacuum

NASA Technical Reports Server (NTRS)

Khattak, C. P.; Schmid, F.

1982-01-01

The most developed process for silicon crystal growth is the Czochralski (CZ) method which was in production for over two decades. In an effort to reduce cost of single crystal silicon for photovoltaic applications, a directional solidification technique, Heat Exchanger Method (HEM), was adapted. Materials used in HEM and CZ furnaces are quite similar (heaters, crucibles, insulation, etc.). To eliminate the cost of high purity argon, it was intended to use vacuum operation in HEM. Two of the major problems encountered in vacuum processing of silicon are crucible decomposition and silicon carbide formation in the melt.

Silicon Qubits

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ladd, Thaddeus D.; Carroll, Malcolm S.

2018-02-28

Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of amore » single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.« less

Microstructured silicon radiation detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okandan, Murat; Derzon, Mark S.; Draper, Bruce L.

2017-03-14

A radiation detector comprises a silicon body in which are defined vertical pores filled with a converter material and situated within silicon depletion regions. One or more charge-collection electrodes are arranged to collect current generated when secondary particles enter the silicon body through walls of the pores. The pores are disposed in low-density clusters, have a majority pore thickness of 5 .mu.m or less, and have a majority aspect ratio, defined as the ratio of pore depth to pore thickness, of at least 10.

Recrystallization of polycrystalline silicon

NASA Technical Reports Server (NTRS)

Lall, C.; Kulkarni, S. B.; Graham, C. D., Jr.; Pope, D. P.

1981-01-01

Optical metallography is used to investigate the recrystallization properties of polycrystalline semiconductor-grade silicon. It is found that polycrystalline silicon recrystallizes at 1380 C in relatively short times, provided that the prior deformation is greater than 30%. For a prior deformation of about 40%, the recrystallization process is essentially complete in about 30 minutes. Silicon recrystallizes at a substantially slower rate than metals at equivalent homologous temperatures. The recrystallized grain size is insensitive to the amount of prestrain for strains in the range of 10-50%.

Prevention of postsurgical scars: comparsion of efficacy and convenience between silicone gel sheet and topical silicone gel.

PubMed

Kim, Sue-Min; Choi, Jung-Sik; Lee, Jung-Ho; Kim, Young-Jin; Jun, Young-Joon

2014-11-01

To date, few studies have compared the effectiveness of topical silicone gels versus that of silicone gel sheets in preventing scars. In this prospective study, we compared the efficacy and the convenience of use of the 2 products. We enrolled 30 patients who had undergone a surgical procedure 2 weeks to 3 months before joining the study. These participants were randomly assigned to 2 treatment arms: one for treatment with a silicone gel sheet, and the other for treatment with a topical silicone gel. Vancouver Scar Scale (VSS) scores were obtained for all patients; in addition, participants completed scoring patient questionnaires 1 and 3 months after treatment onset. Our results reveal not only that no significant difference in efficacy exists between the 2 products but also that topical silicone gels are more convenient to use. While previous studies have advocated for silicone gel sheets as first-line therapies in postoperative scar management, we maintain that similar effects can be expected with topical silicone gel. The authors recommend that, when clinicians have a choice of silicone-based products for scar prevention, they should focus on each patient's scar location, lifestyle, and willingness to undergo scar prevention treatment.

All-solid-state supercapacitors on silicon using graphene from silicon carbide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Bei; Ahmed, Mohsin; Iacopi, Francesca, E-mail: f.iacopi@griffith.edu.au

2016-05-02

Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an example of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitancemore » behavior with a specific area capacitance of up to 174 μF cm{sup −2} with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.« less

Mitotic trafficking of silicon microparticles†

PubMed Central

Serda, Rita E.; Ferrati, Silvia; Godin, Biana; Tasciotti, Ennio; Liu, XueWu

2010-01-01

Multistage carriers were recently introduced by our laboratory, with the concurrent objectives of co-localized delivery of multiple therapeutic agents, the “theranostic” integration of bioactive moieties with imaging contrast, and the selective, potentially personalized bypassing of the multiplicity of biological barriers that adversely impact biodistribution of vascularly injected particulates. Mesoporous (“nanoporous”) silicon microparticles were selected as primary carriers in multi-stage devices, with targets including vascular endothelia at pathological lesions. The objective of this study was to evaluate biocompatibility of mesoporous silicon microparticles with endothelial cells using in vitro assays with an emphasis on microparticle compatibility with mitotic events. We observed that vascular endothelial cells, following internalization of silicon microparticles, maintain cellular integrity, as demonstrated by cellular morphology, viability and intact mitotic trafficking of vesicles bearing silicon microparticles. The presence of gold or iron oxide nanoparticles within the porous matrix did not alter the cellular uptake of particles or the viability of endothelial cells subsequent to engulfment of microparticles. Endothelial cells maintained basal levels of IL-6 and IL-8 release in the presence of silicon microparticles. This is the first study that demonstrates polarized, ordered partitioning of endosomes based on tracking microparticles. The finding that mitotic sorting of endosomes is unencumbered by the presence of nanoporous silicon microparticles advocates the use of silicon microparticles for biomedical applications. PMID:20644846

Latent fingerprint matching.

PubMed

Jain, Anil K; Feng, Jianjiang

2011-01-01

Latent fingerprint identification is of critical importance to law enforcement agencies in identifying suspects: Latent fingerprints are inadvertent impressions left by fingers on surfaces of objects. While tremendous progress has been made in plain and rolled fingerprint matching, latent fingerprint matching continues to be a difficult problem. Poor quality of ridge impressions, small finger area, and large nonlinear distortion are the main difficulties in latent fingerprint matching compared to plain or rolled fingerprint matching. We propose a system for matching latent fingerprints found at crime scenes to rolled fingerprints enrolled in law enforcement databases. In addition to minutiae, we also use extended features, including singularity, ridge quality map, ridge flow map, ridge wavelength map, and skeleton. We tested our system by matching 258 latents in the NIST SD27 database against a background database of 29,257 rolled fingerprints obtained by combining the NIST SD4, SD14, and SD27 databases. The minutiae-based baseline rank-1 identification rate of 34.9 percent was improved to 74 percent when extended features were used. In order to evaluate the relative importance of each extended feature, these features were incrementally used in the order of their cost in marking by latent experts. The experimental results indicate that singularity, ridge quality map, and ridge flow map are the most effective features in improving the matching accuracy.

Dip-coating process: Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project

NASA Technical Reports Server (NTRS)

Zook, J. D.; Heaps, J. D.; Maciolek, R. B.; Koepke, B. G.; Gutter, C. D.; Schuldt, S. B.

1977-01-01

The objective of this research program is to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. The past quarter demonstrated significant progress in several areas. Seeded growth of silicon-on-ceramic (SOC) with an EFG ribbon seed was demonstrated. Different types of mullite were successfully coated with silicon. A new method of deriving minority carrier diffusion length, L sub n from spectral response measurements was evaluated. ECOMOD cost projections were found to be in good agreement with the interim SAMIS method proposed by JPL. On the less positive side, there was a decrease in cell performance which we believe to be due to an unidentified source of impurities.

Pentosanpolysulfate coating of silicone reduces encrustation.

PubMed

Zupkas, P; Parsons, C L; Percival, C; Monga, M

2000-08-01

A significant problem associated with catheterization in the urinary tract is the encrustation of the catheter materials. One approach to reducing encrustation is to alter the surface properties of the catheters. We evaluated the effectiveness of coating with pentosanpolysulfate (PPS), a semisynthetic polysaccharide similar to heparin, in reducing encrustation and the foreign-body inflammatory response to silicone stents in the bladders of male New Zealand White rabbits. Sixteen rabbits were divided into three groups to receive placement in their bladders of uncoated (N = 7), PPS-coated (N = 7), or sham matrix-processed silicone rings (N = 2) via open cystotomy. After 50 days of maintenance on normal food and water, all rabbits were sacrificed, and the air-dried, unfixed silicone ring surfaces were examined by scanning electron microscopy. Bladders and remaining silicone rings were removed and preserved separately. Silicone rings, cleaned of all encrustation, were stained with toluidene blue to determine the presence or absence of PPS coating on the surface. Histologic examination revealed normal tissue in bladder sections exposed to coated silicone rings and an inflammatory response in sections from bladders having uncoated silicone rings. Coating with PPS was associated with an eightfold reduction in the amount of encrustation of silicone and a marked reduction in the inflammatory response of the bladder wall to the foreign body. A PPS coating may be useful in reducing the encrustation of long-term indwelling silicone stents or catheters in the human urinary tract.

"Silicon millefeuille": From a silicon wafer to multiple thin crystalline films in a single step

NASA Astrophysics Data System (ADS)

Hernández, David; Trifonov, Trifon; Garín, Moisés; Alcubilla, Ramon

2013-04-01

During the last years, many techniques have been developed to obtain thin crystalline films from commercial silicon ingots. Large market applications are foreseen in the photovoltaic field, where important cost reductions are predicted, and also in advanced microelectronics technologies as three-dimensional integration, system on foil, or silicon interposers [Dross et al., Prog. Photovoltaics 20, 770-784 (2012); R. Brendel, Thin Film Crystalline Silicon Solar Cells (Wiley-VCH, Weinheim, Germany 2003); J. N. Burghartz, Ultra-Thin Chip Technology and Applications (Springer Science + Business Media, NY, USA, 2010)]. Existing methods produce "one at a time" silicon layers, once one thin film is obtained, the complete process is repeated to obtain the next layer. Here, we describe a technology that, from a single crystalline silicon wafer, produces a large number of crystalline films with controlled thickness in a single technological step.

Silicon micromachined vibrating gyroscopes

NASA Astrophysics Data System (ADS)

Voss, Ralf

1997-09-01

This work gives an overview of silicon micromachined vibrating gyroscopes. Market perspectives and fields of application are pointed out. The advantage of using silicon micromachining is discussed and estimations of the desired performance, especially for automobiles are given. The general principle of vibrating gyroscopes is explained. Vibrating silicon gyroscopes can be divided into seven classes. for each class the characteristic principle is presented and examples are given. Finally a specific sensor, based on a tuning fork for automotive applications with a sensitivity of 250(mu) V/degrees is described in detail.

Constraint-based stereo matching

NASA Technical Reports Server (NTRS)

Kuan, D. T.

1987-01-01

The major difficulty in stereo vision is the correspondence problem that requires matching features in two stereo images. Researchers describe a constraint-based stereo matching technique using local geometric constraints among edge segments to limit the search space and to resolve matching ambiguity. Edge segments are used as image features for stereo matching. Epipolar constraint and individual edge properties are used to determine possible initial matches between edge segments in a stereo image pair. Local edge geometric attributes such as continuity, junction structure, and edge neighborhood relations are used as constraints to guide the stereo matching process. The result is a locally consistent set of edge segment correspondences between stereo images. These locally consistent matches are used to generate higher-level hypotheses on extended edge segments and junctions to form more global contexts to achieve global consistency.

The Impact of 3D Stacking and Technology Scaling on the Power and Area of Stereo Matching Processors.

PubMed

Ok, Seung-Ho; Lee, Yong-Hwan; Shim, Jae Hoon; Lim, Sung Kyu; Moon, Byungin

2017-02-22

Recently, stereo matching processors have been adopted in real-time embedded systems such as intelligent robots and autonomous vehicles, which require minimal hardware resources and low power consumption. Meanwhile, thanks to the through-silicon via (TSV), three-dimensional (3D) stacking technology has emerged as a practical solution to achieving the desired requirements of a high-performance circuit. In this paper, we present the benefits of 3D stacking and process technology scaling on stereo matching processors. We implemented 2-tier 3D-stacked stereo matching processors with GlobalFoundries 130-nm and Nangate 45-nm process design kits and compare them with their two-dimensional (2D) counterparts to identify comprehensive design benefits. In addition, we examine the findings from various analyses to identify the power benefits of 3D-stacked integrated circuit (IC) and device technology advancements. From experiments, we observe that the proposed 3D-stacked ICs, compared to their 2D IC counterparts, obtain 43% area, 13% power, and 14% wire length reductions. In addition, we present a logic partitioning method suitable for a pipeline-based hardware architecture that minimizes the use of TSVs.

The Impact of 3D Stacking and Technology Scaling on the Power and Area of Stereo Matching Processors

PubMed Central

Ok, Seung-Ho; Lee, Yong-Hwan; Shim, Jae Hoon; Lim, Sung Kyu; Moon, Byungin

2017-01-01

Recently, stereo matching processors have been adopted in real-time embedded systems such as intelligent robots and autonomous vehicles, which require minimal hardware resources and low power consumption. Meanwhile, thanks to the through-silicon via (TSV), three-dimensional (3D) stacking technology has emerged as a practical solution to achieving the desired requirements of a high-performance circuit. In this paper, we present the benefits of 3D stacking and process technology scaling on stereo matching processors. We implemented 2-tier 3D-stacked stereo matching processors with GlobalFoundries 130-nm and Nangate 45-nm process design kits and compare them with their two-dimensional (2D) counterparts to identify comprehensive design benefits. In addition, we examine the findings from various analyses to identify the power benefits of 3D-stacked integrated circuit (IC) and device technology advancements. From experiments, we observe that the proposed 3D-stacked ICs, compared to their 2D IC counterparts, obtain 43% area, 13% power, and 14% wire length reductions. In addition, we present a logic partitioning method suitable for a pipeline-based hardware architecture that minimizes the use of TSVs. PMID:28241437

Mode-converting coupler for silicon-on-sapphire devices

NASA Astrophysics Data System (ADS)

Zlatanovic, S.; Offord, B. W.; Owen, M.; Shimabukuro, R.; Jacobs, E. W.

2015-02-01

Silicon-on-sapphire devices are attractive for the mid-infrared optical applications up to 5 microns due to the low loss of both silicon and sapphire in this wavelength band. Designing efficient couplers for silicon-on-sapphire devices presents a challenge due to a highly confined mode in silicon and large values of refractive index of both silicon and sapphire. Here, we present design, fabrication, and measurements of a mode-converting coupler for silicon-on-sapphire waveguides. We utilize a mode converter layout that consists of a large waveguide that is overlays a silicon inverse tapered waveguide. While this geometry was previously utilized for silicon-on-oxide devices, the novelty is in using materials that are compatible with the silicon-on-sapphire platform. In the current coupler the overlaying waveguide is made of silicon nitride. Silicon nitride is the material of choice because of the large index of refraction and low absorption from near-infrared to mid-infrared. The couplers were fabricated using a 0.25 micron silicon-on-sapphire process. The measured coupling loss from tapered lensed silica fibers to the silicon was 4.8dB/coupler. We will describe some challenges in fabrication process and discuss ways to overcome them.

Method for processing silicon solar cells

DOEpatents

Tsuo, Y.S.; Landry, M.D.; Pitts, J.R.

1997-05-06

The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.

Method for processing silicon solar cells

DOEpatents

Tsuo, Y. Simon; Landry, Marc D.; Pitts, John R.

1997-01-01

The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystallline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation.

Transmutation doping of silicon solar cells

NASA Technical Reports Server (NTRS)

Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

1977-01-01

Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

Anisotropic Tribological Properties of Silicon Carbide

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1980-01-01

The anisotropic friction, deformation and fracture behavior of single crystal silicon carbide surfaces were investigated in two categories. The categories were called adhesive and abrasive wear processes, respectively. In the adhesive wear process, the adhesion, friction and wear of silicon carbide were markedly dependent on crystallographic orientation. The force to reestablish the shearing fracture of adhesive bond at the interface between silicon carbide and metal was the lowest in the preferred orientation of silicon carbide slip system. The fracturing of silicon carbide occurred near the adhesive bond to metal and it was due to primary cleavages of both prismatic (10(-1)0) and basal (0001) planes.

Silicon on insulator self-aligned transistors

DOEpatents

McCarthy, Anthony M.

2003-11-18

A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

Creep analysis of silicone for podiatry applications.

PubMed

Janeiro-Arocas, Julia; Tarrío-Saavedra, Javier; López-Beceiro, Jorge; Naya, Salvador; López-Canosa, Adrián; Heredia-García, Nicolás; Artiaga, Ramón

2016-10-01

This work shows an effective methodology to characterize the creep-recovery behavior of silicones before their application in podiatry. The aim is to characterize, model and compare the creep-recovery properties of different types of silicone used in podiatry orthotics. Creep-recovery phenomena of silicones used in podiatry orthotics is characterized by dynamic mechanical analysis (DMA). Silicones provided by Herbitas are compared by observing their viscoelastic properties by Functional Data Analysis (FDA) and nonlinear regression. The relationship between strain and time is modeled by fixed and mixed effects nonlinear regression to compare easily and intuitively podiatry silicones. Functional ANOVA and Kohlrausch-Willians-Watts (KWW) model with fixed and mixed effects allows us to compare different silicones observing the values of fitting parameters and their physical meaning. The differences between silicones are related to the variations of breadth of creep-recovery time distribution and instantaneous deformation-permanent strain. Nevertheless, the mean creep-relaxation time is the same for all the studied silicones. Silicones used in palliative orthoses have higher instantaneous deformation-permanent strain and narrower creep-recovery distribution. The proposed methodology based on DMA, FDA and nonlinear regression is an useful tool to characterize and choose the proper silicone for each podiatry application according to their viscoelastic properties. Copyright © 2016 Elsevier Ltd. All rights reserved.

Three dimensional amorphous silicon/microcrystalline silicon solar cells

DOEpatents

Kaschmitter, James L.

1996-01-01

Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/.mu.c-Si) solar cells which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell.

Three dimensional amorphous silicon/microcrystalline silicon solar cells

DOEpatents

Kaschmitter, J.L.

1996-07-23

Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

High-performance solid state supercapacitors assembling graphene interconnected networks in porous silicon electrode by electrochemical methods using 2,6-dihydroxynaphthalen.

PubMed

Romanitan, Cosmin; Varasteanu, Pericle; Mihalache, Iuliana; Culita, Daniela; Somacescu, Simona; Pascu, Razvan; Tanasa, Eugenia; Eremia, Sandra A V; Boldeiu, Adina; Simion, Monica; Radoi, Antonio; Kusko, Mihaela

2018-06-25

The challenge for conformal modification of the ultra-high internal surface of nanoporous silicon was tackled by electrochemical polymerisation of 2,6-dihydroxynaphthalene using cyclic voltammetry or potentiometry and, notably, after the thermal treatment (800 °C, N 2 , 4 h) an assembly of interconnected networks of graphene strongly adhering to nanoporous silicon matrix resulted. Herein we demonstrate the achievement of an easy scalable technology for solid state supercapacitors on silicon, with excellent electrochemical properties. Accordingly, our symmetric supercapacitors (SSC) showed remarkable performance characteristics, comparable to many of the best high-power and/or high-energy carbon-based supercapacitors, their figures of merit matching under battery-like supercapacitor behaviour. Furthermore, the devices displayed high specific capacity values along with enhanced capacity retention even at ultra-high rates for voltage sweep, 5 V/s, or discharge current density, 100 A/g, respectively. The cycling stability tests performed at relatively high discharge current density of 10 A/g indicated good capacity retention, with a superior performance demonstrated for the electrodes obtained under cyclic voltammetry approach, which may be ascribed on the one hand to a better coverage of the porous silicon substrate and, on the other hand, to an improved resilience of the hybrid electrode to pore clogging.

Confined in-fiber solidification and structural control of silicon and silicon-germanium microparticles.

PubMed

Gumennik, Alexander; Levy, Etgar C; Grena, Benjamin; Hou, Chong; Rein, Michael; Abouraddy, Ayman F; Joannopoulos, John D; Fink, Yoel

2017-07-11

Crystallization of microdroplets of molten alloys could, in principle, present a number of possible morphological outcomes, depending on the symmetry of the propagating solidification front and its velocity, such as axial or spherically symmetric species segregation. However, because of thermal or constitutional supercooling, resulting droplets often only display dendritic morphologies. Here we report on the crystallization of alloyed droplets of controlled micrometer dimensions comprising silicon and germanium, leading to a number of surprising outcomes. We first produce an array of silicon-germanium particles embedded in silica, through capillary breakup of an alloy-core silica-cladding fiber. Heating and subsequent controlled cooling of individual particles with a two-wavelength laser setup allows us to realize two different morphologies, the first being a silicon-germanium compositionally segregated Janus particle oriented with respect to the illumination axis and the second being a sphere made of dendrites of germanium in silicon. Gigapascal-level compressive stresses are measured within pure silicon solidified in silica as a direct consequence of volume-constrained solidification of a material undergoing anomalous expansion. The ability to generate microspheres with controlled morphology and unusual stresses could pave the way toward advanced integrated in-fiber electronic or optoelectronic devices.

Prelithiation of silicon-carbon nanotube anodes for lithium ion batteries by stabilized lithium metal powder (SLMP).

PubMed

Forney, Michael W; Ganter, Matthew J; Staub, Jason W; Ridgley, Richard D; Landi, Brian J

2013-09-11

Stabilized lithium metal powder (SLMP) has been applied during battery assembly to effectively prelithiate high capacity (1500-2500 mAh/g) silicon-carbon nanotube (Si-CNT) anodes, eliminating the 20-40% first cycle irreversible capacity loss. Pressure-activation of SLMP is shown to enhance prelithiation and enable capacity matching between Si-CNT anodes and lithium nickel cobalt aluminum oxide (NCA) cathodes in full batteries with minimal added mass. The prelithiation approach enables high energy density NCA/Si-CNT batteries achieving >1000 cycles at 20% depth-of-discharge.

Process for forming silicon carbide films and microcomponents

DOEpatents

Hamza, A.V.; Balooch, M.; Moalem, M.

1999-01-19

Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C{sub 60} precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C{sub 60} with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C{sub 60} on silicon dioxide at surface temperatures less than 1250 K. 5 figs.

Process for forming silicon carbide films and microcomponents

DOEpatents

Hamza, Alex V.; Balooch, Mehdi; Moalem, Mehran

1999-01-01

Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.

Dephosphorization of Levitated Silicon-Iron Droplets for Production of Solar-Grade Silicon

NASA Astrophysics Data System (ADS)

Le, Katherine; Yang, Yindong; Barati, Mansoor; McLean, Alexander

2018-05-01

The treatment of relatively inexpensive silicon-iron alloys is a potential refining route in order to generate solar-grade silicon. Phosphorus is one of the more difficult impurity elements to remove by conventional processing. In this study, electromagnetic levitation was used to investigate phosphorus behavior in silicon-iron alloy droplets exposed to H2-Ar gas mixtures under various experimental conditions including, refining time, temperature (1723 K to 1993 K), gas flow rate, iron content, and initial phosphorus concentration in the alloy. Thermodynamic modeling of the dephosphorization reaction permitted prediction of the various gaseous products and indicated that diatomic phosphorus is the dominant species formed.

High-Temperature Annealing as a Method for the Silicon Nanoclusters Growth in Stoichiometric Silicon Dioxide

NASA Astrophysics Data System (ADS)

Ivanova, E. V.; Dementev, P. A.; Sitnikova, A. A.; Aleksandrov, O. V.; Zamoryanskaya, M. V.

2018-07-01

A method for the growth of nanocomposite layers in stoichiometric amorphous silicon dioxide is proposed. It is shown that, after annealing at a temperature of 1150°C in nitrogen atmosphere, a layer containing silicon nanoclusters is formed. Silicon nanoclusters have a crystal structure and a size of 3-6 nm. In a film grown on a n-type substrate, a layer of silicon nanoclusters with a thickness of about 10 nm is observed. In the case of a film grown on a p-type substrate, a nanocomposite layer with a thickness of about 100 nm is observed. The difference in the formation of a nanocomposite layer in films on various substrates is associated with the doping of silicon dioxide with impurities from the substrate during the growth of the film. The formation of the nanocomposite layer was confirmed by transmission electron microscopy, XPS and local cathodoluminescence studies.

[Propensity score matching in SPSS].

PubMed

Huang, Fuqiang; DU, Chunlin; Sun, Menghui; Ning, Bing; Luo, Ying; An, Shengli

2015-11-01

To realize propensity score matching in PS Matching module of SPSS and interpret the analysis results. The R software and plug-in that could link with the corresponding versions of SPSS and propensity score matching package were installed. A PS matching module was added in the SPSS interface, and its use was demonstrated with test data. Score estimation and nearest neighbor matching was achieved with the PS matching module, and the results of qualitative and quantitative statistical description and evaluation were presented in the form of a graph matching. Propensity score matching can be accomplished conveniently using SPSS software.

Dynamic Silicon Nanophotonics

DTIC Science & Technology

2013-07-31

sensitive to fabrication imperfections and small temperature changes, therefore they are challenging to integrate into high yield mass production ... Cocoa Beach, Florida, September 2012. 15. Ali Wanis Elshaari, “Photon Manipulation in Silicon Nanophotonic Circuits,” Ph.D. Dissertation, Rochester...1.5-micron Light using Silicon Nanocrystals,” 2012 IEEE Avionics, Fiber Optics and Photonics Conference (AVFOP 2012), ThB3, Cocoa Beach, Florida

Preventing Freezeup in Silicon Ribbon Growth

NASA Technical Reports Server (NTRS)

Mackintosh, B.

1983-01-01

Carefully-shaped heat conductor helps control thermal gradients crucial to growth of single-crystal silicon sheets for solar cells. Ends of die through which silicon sheet is drawn as ribbon from molten silicon. Profiled heat extractor prevents ribbon ends from solidifying prematurely and breaking.

Silicon nitride sintered body

NASA Technical Reports Server (NTRS)

Suzuki, K.; Shinohara, N.

1984-01-01

The sintering of silicon carbide and it production are described. The method of production is by calcination in which molding is followed by sintering without compression. The invention improves the composition of the silicon carbide ceramic. Six examples of the invention are illustrated and discussed.

Silicon carbide ceramic production

NASA Technical Reports Server (NTRS)

Suzuki, K.; Shinohara, N.

1984-01-01

A method to produce sintered silicon carbide ceramics in which powdery carbonaceous components with a dispersant are mixed with silicon carbide powder, shaped as required with or without drying, and fired in nonoxidation atmosphere is described. Carbon black is used as the carbonaceous component.

Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells.

PubMed

Köhler, Malte; Pomaska, Manuel; Lentz, Florian; Finger, Friedhelm; Rau, Uwe; Ding, Kaining

2018-05-02

Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), silicon tunnel oxide (SiO 2 ) stack are an alternative to amorphous silicon-based contacts for the front side of silicon heterojunction solar cells. In a systematic study of the μc-SiC:H(n)/SiO 2 /c-Si contact, we investigated selected wet-chemical oxidation methods for the formation of ultrathin SiO 2 , in order to passivate the silicon surface while ensuring a low contact resistivity. By tuning the SiO 2 properties, implied open-circuit voltages of 714 mV and contact resistivities of 32 mΩ cm 2 were achieved using μc-SiC:H(n)/SiO 2 /c-Si as transparent passivated contacts.

Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition.

PubMed

Carretero-Genevrier, Adrián; Gich, Martí

2015-12-21

This work describes the detailed protocol for preparing piezoelectric macroporous epitaxial quartz films on silicon(100) substrates. This is a three-step process based on the preparation of a sol in a one-pot synthesis which is followed by the deposition of a gel film on Si(100) substrates by evaporation induced self-assembly using the dip-coating technique and ends with a thermal treatment of the material to induce the gel crystallization and the growth of the quartz film. The formation of a silica gel is based on the reaction of a tetraethyl orthosilicate and water, catalyzed by HCl, in ethanol. However, the solution contains two additional components that are essential for preparing mesoporous epitaxial quartz films from these silica gels dip-coated on Si. Alkaline earth ions, like Sr(2+) act as glass melting agents that facilitate the crystallization of silica and in combination with cetyl trimethylammonium bromide (CTAB) amphiphilic template form a phase separation responsible of the macroporosity of the films. The good matching between the quartz and silicon cell parameters is also essential in the stabilization of quartz over other SiO2 polymorphs and is at the origin of the epitaxial growth.

Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition

PubMed Central

Carretero-Genevrier, Adrián; Gich, Martí

2015-01-01

This work describes the detailed protocol for preparing piezoelectric macroporous epitaxial quartz films on silicon(100) substrates. This is a three-step process based on the preparation of a sol in a one-pot synthesis which is followed by the deposition of a gel film on Si(100) substrates by evaporation induced self-assembly using the dip-coating technique and ends with a thermal treatment of the material to induce the gel crystallization and the growth of the quartz film. The formation of a silica gel is based on the reaction of a tetraethyl orthosilicate and water, catalyzed by HCl, in ethanol. However, the solution contains two additional components that are essential for preparing mesoporous epitaxial quartz films from these silica gels dip-coated on Si. Alkaline earth ions, like Sr2+ act as glass melting agents that facilitate the crystallization of silica and in combination with cetyl trimethylammonium bromide (CTAB) amphiphilic template form a phase separation responsible of the macroporosity of the films. The good matching between the quartz and silicon cell parameters is also essential in the stabilization of quartz over other SiO2 polymorphs and is at the origin of the epitaxial growth. PMID:26710210

Studies of SERS efficiency of gold coated porous silicon formed on rough silicon backside

NASA Astrophysics Data System (ADS)

Dridi, H.; Haji, L.; Moadhen, A.

2017-12-01

Starting from a rough backside of silicon wafer, we have formed a porous layer by electrochemical anodization and then coated by a thin film of gold. The morphological characteristics of the porous silicon and in turn the metal film are governed by the anodization process and also by the starting surface. So, in order to investigate the Plasmonic aspect of such rough surface which combines roughness inherent to the porous nature and that due to rough starting surface, we have used a dye target molecule to study its SERS signal using a porous silicon layer obtained on the rough backside surface. The use of unusual backside of silicon wafer could be, beside the others, an interesting way to made SERS effective substrate thanks to reproducible rough porous gold on porous layer from this starting face. The morphological results correspond to the silicon rough surface as a function of the crystallographic orientation showed the presence of two different substrate structure. The optical reflectivity results obtained of gold deposited on oxidized porous silicon showed a dependence of its Localized Surface Plasmon band frequency of the deposit time. SERS results, obtained for a dye target molecule (Rhodamine 6G), show a higher intensities in the case of the 〈110〉 orientation, which characterized by the higher roughness surface. Voici "the most relevant and important aspects of our work".

Light-induced changes in silicon nanocrystal based solar cells: Modification of silicon-hydrogen bonding on silicon nanocrystal surface under illumination

NASA Astrophysics Data System (ADS)

Kim, Ka-Hyun; Johnson, Erik V.; Cabarrocas, Pere Roca i.

2016-07-01

Hydrogenated polymorphous silicon (pm-Si:H) is a material consisting of a small volume fraction of nanocrystals embedded in an amorphous matrix. pm-Si:H solar cells demonstrate interesting initial degradation behaviors such as rapid initial change in photovoltaic parameters and self-healing after degradation during light-soaking. The precise dynamics of the light-induced degradation was studied in a series of light-soaking experiments under various illumination conditions such as AM1.5G and filtered 570 nm yellow light. Hydrogen effusion experiment before and after light-soaking further revealed that the initial degradation of pm-Si:H solar cells originate from the modification of silicon-hydrogen bonding on the surface of silicon nanocrystals in pm-Si:H.

Room temperature visible photoluminescence of silicon nanocrystallites embedded in amorphous silicon carbide matrix

NASA Astrophysics Data System (ADS)

Coscia, U.; Ambrosone, G.; Basa, D. K.

2008-03-01

The nanocrystalline silicon embedded in amorphous silicon carbide matrix was prepared by varying rf power in high vacuum plasma enhanced chemical vapor deposition system using silane methane gas mixture highly diluted in hydrogen. In this paper, we have studied the evolution of the structural, optical, and electrical properties of this material as a function of rf power. We have observed visible photoluminescence at room temperature and also have discussed the role played by the Si nanocrystallites and the amorphous silicon carbide matrix. The decrease of the nanocrystalline size, responsible for quantum confinement effect, facilitated by the amorphous silicon carbide matrix, is shown to be the primary cause for the increase in the PL intensity, blueshift of the PL peak position, decrease of the PL width (full width at half maximum) as well as the increase of the optical band gap and the decrease of the dark conductivity.

Hybrid III-V/silicon lasers

NASA Astrophysics Data System (ADS)

Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

2014-05-01

The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

Influence of Chemical Composition and Structure in Silicon Dielectric Materials on Passivation of Thin Crystalline Silicon on Glass.

PubMed

Calnan, Sonya; Gabriel, Onno; Rothert, Inga; Werth, Matteo; Ring, Sven; Stannowski, Bernd; Schlatmann, Rutger

2015-09-02

In this study, various silicon dielectric films, namely, a-SiOx:H, a-SiNx:H, and a-SiOxNy:H, grown by plasma enhanced chemical vapor deposition (PECVD) were evaluated for use as interlayers (ILs) between crystalline silicon and glass. Chemical bonding analysis using Fourier transform infrared spectroscopy showed that high values of oxidant gases (CO2 and/or N2), added to SiH4 during PECVD, reduced the Si-H and N-H bond density in the silicon dielectrics. Various three layer stacks combining the silicon dielectric materials were designed to minimize optical losses between silicon and glass in rear side contacted heterojunction pn test cells. The PECVD grown silicon dielectrics retained their functionality despite being subjected to harsh subsequent processing such as crystallization of the silicon at 1414 °C or above. High values of short circuit current density (Jsc; without additional hydrogen passivation) required a high density of Si-H bonds and for the nitrogen containing films, additionally, a high N-H bond density. Concurrently high values of both Jsc and open circuit voltage Voc were only observed when [Si-H] was equal to or exceeded [N-H]. Generally, Voc correlated with a high density of [Si-H] bonds in the silicon dielectric; otherwise, additional hydrogen passivation using an active plasma process was required. The highest Voc ∼ 560 mV, for a silicon acceptor concentration of about 10(16) cm(-3), was observed for stacks where an a-SiOxNy:H film was adjacent to the silicon. Regardless of the cell absorber thickness, field effect passivation of the buried silicon surface by the silicon dielectric was mandatory for efficient collection of carriers generated from short wavelength light (in the vicinity of the glass-Si interface). However, additional hydrogen passivation was obligatory for an increased diffusion length of the photogenerated carriers and thus Jsc in solar cells with thicker absorbers.

Antifuse with a single silicon-rich silicon nitride insulating layer

DOEpatents

Habermehl, Scott D.; Apodaca, Roger T.

2013-01-22

An antifuse is disclosed which has an electrically-insulating region sandwiched between two electrodes. The electrically-insulating region has a single layer of a non-hydrogenated silicon-rich (i.e. non-stoichiometric) silicon nitride SiN.sub.X with a nitrogen content X which is generally in the range of 0silicon. Arrays of antifuses can also be formed.

Study of properties of modified silicones at solid-liquid interface: fabric-silicone interactions.

PubMed

Purohit, P; Somasundaran, P; Kulkarni, R

2006-06-15

Silicones are special reagents that impart desired surface properties such as softness, bounciness and antiwrinkle properties to fabrics and related materials. Although these finishing processes have been practiced routinely, very little is known about the mechanisms involved in modification so that they could be improved. The current study was undertaken to develop basic understanding of the mechanisms responsible for surface modification of fibers using silicones. PDMS based amino silicone emulsions, quaternized to various degrees using dimethyl sulphate, were used in the present study. The electrokinetic properties of the modified silicones were studied as a function of pH. It was expected that the silicone emulsions would show a steady positive zeta potential throughout the pH range due to the quaternization by dimethyl sulphate. Surprisingly, a sudden drop in the zeta potential was observed around pH 8 with the samples turning hazy in the pH range of 8-10. Turbidimetric studies also showed a sudden increase in the turbidity in the pH range 8-10 where commercial processes also encounter problems. It was concluded that the emulsions were destabilized at pH 8-10 thus rendering them ineffective for surface treatment. In order to identify reason for the improvement in fabric properties, fiber structure was monitored using atomic force microscopy. It was observed that the treated fibers were far smoother, relaxed and uniform as compared to the untreated fibers. Thus the morphology of the fabric is modified in a specific way by treatment with specialty silicones.

Ultra-Thin Monocrystalline Silicon Solar Cell with 12.2% Efficiency Using Silicon-On-Insulator Substrate.

PubMed

Bian, Jian-Tao; Yu, Jian; Duan, Wei-Yuan; Qiu, Yu

2015-04-01

Single side heterojunction silicon solar cells were designed and fabricated using Silicon-On-Insulator (SOI) substrate. The TCAD software was used to simulate the effect of silicon layer thickness, doping concentration and the series resistance. A 10.5 µm thick monocrystalline silicon layer was epitaxially grown on the SOI with boron doping concentration of 2 x 10(16) cm(-3) by thermal CVD. Very high Voc of 678 mV was achieved by applying amorphous silicon heterojunction emitter on the front surface. The single cell efficiency of 12.2% was achieved without any light trapping structures. The rear surface recombination and the series resistance are the main limiting factors for the cell efficiency in addition to the c-Si thickness. By integrating an efficient light trapping scheme and further optimizing fabrication process, higher efficiency of 14.0% is expected for this type of cells. It can be applied to integrated circuits on a monolithic chip to meet the requirements of energy autonomous systems.

EDITORIAL: Special issue on silicon photonics

NASA Astrophysics Data System (ADS)

Reed, Graham; Paniccia, Mario; Wada, Kazumi; Mashanovich, Goran

2008-06-01

The technology now known as silicon photonics can be traced back to the pioneering work of Soref in the mid-1980s (see, for example, Soref R A and Lorenzo J P 1985 Electron. Lett. 21 953). However, the nature of the research conducted today, whilst it builds upon that early work, is unrecognizable in terms of technology metrics such as device efficiency, device data rate and device dimensions, and even in targeted applications areas. Today silicon photonics is still evolving, and is enjoying a period of unprecedented attention in terms of research focus. This has resulted in orders-of-magnitude improvement in device performance over the last few years to levels many thought were impossible. However, despite the existence of the research field for more than two decades, silicon is still regarded as a 'new' optical material, one that is being manipulated and modified to satisfy the requirements of a range of applications. This is somewhat ironic since silicon is one of the best known and most thoroughly studied materials, thanks to the electronics industry that has made silicon its material of choice. The principal reasons for the lack of study of this 'late developer' are that (i) silicon is an indirect bandgap material and (ii) it does not exhibit a linear electro-optic (Pockels) effect. The former condition means that it is difficult to make a laser in silicon based on the intrinsic performance of the material, and consequently, in recent years, researchers have attempted to modify the material to artificially engineer the conditions for lasing to be viable (see, for example, the review text, Jalali B et al 2008 Silicon Lasers in Silicon Photonics: The State of the Art ed G T Reed (New York: Wiley)). The latter condition means that optical modulators are intrinsically less efficient in silicon than in some other materials, particularly when targeting the popular telecommunications wavelengths around 1.55 μm. Therefore researchers have sought alternative

Silicon carbide fibers and articles including same

DOEpatents

Garnier, John E; Griffith, George W

2015-01-27

Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

Intermediate Bandgap Solar Cells From Nanostructured Silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Black, Marcie

2014-10-30

This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

Process of preparing tritiated porous silicon

DOEpatents

Tam, Shiu-Wing

1997-01-01

A process of preparing tritiated porous silicon in which porous silicon is equilibrated with a gaseous vapor containing HT/T.sub.2 gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon.

Facile design and stabilization of a novel one-dimensional silicon-based photonic crystal microcavity

NASA Astrophysics Data System (ADS)

Salem, Mohamed Shaker; Ibrahim, Shaimaa Moustafa; Amin, Mohamed

2017-07-01

A novel silicon-based optical microcavity composed of a defect layer sandwiched between two parallel rugate mirrors is created by the electrochemical anodization of silicon in a hydrofluoric acid-based electrolyte using a precisely controlled current density profile. The profile consists of two sinusoidally modulated current waveforms separated by a fixed current that is applied to produce a defect layer between the mirrors. The spectral response of the rugate-based microcavity is simulated using the transfer matrix method and compared to the conventional Bragg-based microcavity. It is found that the resonance position of both microcavities is unchanged. However, the rugate-based microcavity exhibits a distinct reduction of the sidebands' intensity. Further attenuation of the sidebands' intensity is obtained by creating refractive index matching layers with optimized thickness at the bottom and top of the rugate-based microcavity. In order to stabilize the produced microcavity against natural oxidation, atomic layer deposition of an ultra-thin titanium dioxide layer on the pore wall is carried out followed by thermal annealing. The microcavity resonance position shows an observable sensitivity to the deposition and annealing processes.

Sources and transport of silicone NVR

NASA Technical Reports Server (NTRS)

Harvey, Gale A.

1992-01-01

The retrieved LDEF had varying amounts of visible contamination films (brown stains) at many locations. FTIR spectra of heavy film deposits at vents and of optical windows from tray E5 indicated methyl silicone and silica in the contaminant films. Two possible sources of the methyl silicone are DC-710 phenyl methyl silicone in the shuttle-bay-liner beta cloth, and the shuttle tile waterproofing silane. It is concluded that much of the silicon and silica contamination came from ground operations and the orbiter.

Silicon photonics and challenges for fabrication

NASA Astrophysics Data System (ADS)

Feilchenfeld, N. B.; Nummy, K.; Barwicz, T.; Gill, D.; Kiewra, E.; Leidy, R.; Orcutt, J. S.; Rosenberg, J.; Stricker, A. D.; Whiting, C.; Ayala, J.; Cucci, B.; Dang, D.; Doan, T.; Ghosal, M.; Khater, M.; McLean, K.; Porth, B.; Sowinski, Z.; Willets, C.; Xiong, C.; Yu, C.; Yum, S.; Giewont, K.; Green, W. M. J.

2017-03-01

Silicon photonics is rapidly becoming the key enabler for meeting the future data speed and volume required by the Internet of Things. A stable manufacturing process is needed to deliver cost and yield expectations to the technology marketplace. We present the key challenges and technical results from both 200mm and 300mm facilities for a silicon photonics fabrication process which includes monolithic integration with CMOS. This includes waveguide patterning, optical proximity correction for photonic devices, silicon thickness uniformity and thick material patterning for passive fiber to waveguide alignment. The device and process metrics show that the transfer of the silicon photonics process from 200mm to 300mm will provide a stable high volume manufacturing platform for silicon photonics designs.

Silicone oil migration into the orbit.

PubMed

Ali Bautista, Sana; Wladis, Edward J; Farber, Martha; Falk, Naomi S; Phelps, Paul O

2018-01-04

To report a case in of intravitreal silicone oil migration into the inferior orbit. Silicone oil tamponade is commonly used in retinal detachment repair and extrusion into the orbital tissues is very rare. A 70-year-old male with a remote history of repair of a right ruptured globe and retinal detachment surgery presented with progressive right lower eyelid edema. There was a known history of intravitreal silicone oil instillation and removal. An elective right inferior orbitotomy with excisional biopsy was performed. Histopathology confirmed the presence of silicone oil intermixed with necrotic fat. The patient had excellent cosmetic and functional outcome. The presence of silicone oil within the orbital fat may be a result of increased intraocular pressure and extrusion through presumably water-tight sclerotomy sites.

Smart integration of silicon nanowire arrays in all-silicon thermoelectric micro-nanogenerators

NASA Astrophysics Data System (ADS)

Fonseca, Luis; Santos, Jose-Domingo; Roncaglia, Alberto; Narducci, Dario; Calaza, Carlos; Salleras, Marc; Donmez, Inci; Tarancon, Albert; Morata, Alex; Gadea, Gerard; Belsito, Luca; Zulian, Laura

2016-08-01

Micro and nanotechnologies are called to play a key role in the fabrication of small and low cost sensors with excellent performance enabling new continuous monitoring scenarios and distributed intelligence paradigms (Internet of Things, Trillion Sensors). Harvesting devices providing energy autonomy to those large numbers of microsensors will be essential. In those scenarios where waste heat sources are present, thermoelectricity will be the obvious choice. However, miniaturization of state of the art thermoelectric modules is not easy with the current technologies used for their fabrication. Micro and nanotechnologies offer an interesting alternative considering that silicon in nanowire form is a material with a promising thermoelectric figure of merit. This paper presents two approaches for the integration of large numbers of silicon nanowires in a cost-effective and practical way using only micromachining and thin-film processes compatible with silicon technologies. Both approaches lead to automated physical and electrical integration of medium-high density stacked arrays of crystalline or polycrystalline silicon nanowires with arbitrary length (tens to hundreds microns) and diameters below 100 nm.

Hot Electron Injection into Uniaxially Strained Silicon

NASA Astrophysics Data System (ADS)

Kim, Hyun Soo

In semiconductor spintronics, silicon attracts great attention due to the long electron spin lifetime. Silicon is also one of the most commonly used semiconductor in microelectronics industry. The spin relaxation process of diamond crystal structure such as silicon is dominant by Elliot-Yafet mechanism. Yafet shows that intravalley scattering process is dominant. The conduction electron spin lifetime measured by electron spin resonance measurement and electronic measurement using ballistic hot electron method well agrees with Yafet's theory. However, the recent theory predicts a strong contribution of intervalley scattering process such as f-process in silicon. The conduction band minimum is close the Brillouin zone edge, X point which causes strong spin mixing at the conduction band. A recent experiment of electric field-induced hot electron spin relaxation also shows the strong effect of f-process in silicon. In uniaxially strained silicon along crystal axis [100], the suppression of f-process is predicted which leads to enhance electron spin lifetime. By inducing a change in crystal structure due to uniaxial strain, the six fold degeneracy becomes two fold degeneracy, which is valley splitting. As the valley splitting increases, intervalley scattering is reduced. A recent theory predicts 4 times longer electron spin lifetime in 0.5% uniaxially strained silicon. In this thesis, we demonstrate ballistic hot electron injection into silicon under various uniaxial strain. Spin polarized hot electron injection under strain is experimentally one of the most challenging part to measure conduction electron spin lifetime in silicon. Hot electron injection adopts tunnel junction which is a thin oxide layer between two conducting materials. Tunnel barrier, which is an oxide layer, is only 4 ˜ 5 nm thick. Also, two conducting materials are only tens of nanometer. Therefore, under high pressure to apply 0.5% strain on silicon, thin films on silicon substrate can be easily

Rough SERS substrate based on gold coated porous silicon layer prepared on the silicon backside surface

NASA Astrophysics Data System (ADS)

Dridi, H.; Haji, L.; Moadhen, A.

2017-04-01

We report in this paper a novel method to elaborate rough Surface Enhanced Raman Scattering (SERS) substrate. A single layer of porous silicon was formed on the silicon backside surface. Morphological characteristics of the porous silicon layer before and after gold deposition were influenced by the rough character (gold size). The reflectance measurements showed a dependence of the gold nano-grains size on the surface nature, through the Localized Surface Plasmon (LSP) band properties. SERS signal of Rhodamine 6G used as a model analyte, adsorbed on the rough porous silicon layer revealed a marked enhancement of its vibrational modes intensities.

Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters

NASA Astrophysics Data System (ADS)

Ahmad, I.; Temple, M. P.; Kallis, A.; Wojdak, M.; Oton, C. J.; Barbier, D.; Saleh, H.; Kenyon, A. J.; Loh, W. H.

2008-12-01

Erbium-doped silicon-rich silicon oxide films deposited by plasma enhanced chemical vapor deposition suffer from compressive stress as deposited, which converts to a large tensile stress on annealing due to the release of hydrogen. Although the cracking that results from this stress can be avoided by patterning the films into ridges, significant stress remains along the ridge axis. Measurements of erbium photoluminescence sensitized by silicon nanoclusters in stressed and relaxed films suggest an important role for internal film stresses in promoting the phase separation of excess silicon into nanoclusters, which has previously been thought of as a thermally driven process.

Dry etch method for texturing silicon and device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gershon, Talia S.; Haight, Richard A.; Kim, Jeehwan

2017-07-25

A method for texturing silicon includes loading a silicon wafer into a vacuum chamber, heating the silicon wafer and thermal cracking a gas to generate cracked sulfur species. The silicon wafer is exposed to the cracked sulfur species for a time duration in accordance with a texture characteristic needed for a surface of the silicon wafer.

Silicon Micromachined Microlens Array for THz Antennas

NASA Technical Reports Server (NTRS)

Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, IImran; Gill, John J.; Jung-Kubiak, Cecile D.; Llombart, Nuria

2013-01-01

5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a

Process for producing amorphous and crystalline silicon nitride

DOEpatents

Morgan, P.E.D.; Pugar, E.A.

1985-11-12

A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of whiskers'' or needles is heated at temperature ranging from about 900 C to about 1,200 C to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900 C. 6 figs.

Process for producing amorphous and crystalline silicon nitride

DOEpatents

Morgan, Peter E. D.; Pugar, Eloise A.

1985-01-01

A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of "whiskers" or needles is heated at temperature ranging from about 900.degree. C. to about 1200.degree. C. to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900.degree. C.

Femtosecond laser fabricating black silicon in alkaline solution

NASA Astrophysics Data System (ADS)

Meng, Jiao; Song, Haiying; Li, Xiaoli; Liu, Shibing

2015-03-01

An efficient approach for enhancing the surface antireflection is proposed, in which a black silicon is fabricated by a femtosecond laser in alkaline solution. In the experiment, 2 wt% NaOH solution is formulated at room temperature (22 ± 1 °C). Then, a polished silicon is scanned via femtosecond laser irradiation in 2 wt% NaOH solution. Jungle-like microstructures on the black silicon surface are characterized using an atomic force microscopy. The reflectance of the black silicon is measured at the wavelengths ranging from 400 to 750 nm. Compared to the polished silicon, the black silicon can significantly suppress the optical reflection throughout the visible region (<5 %). Meanwhile, we also investigated the factors of the black silicon, including the femtosecond laser pulse energy and the scanning speed. This method is simple and effective to acquire the black silicon, which probably has a large advantage in fast and cost-effective black silicon fabrication.

Porous silicon-based direct hydrogen sulphide fuel cells.

PubMed

Dzhafarov, T D; Yuksel, S Aydin

2011-10-01

In this paper, the use of Au/porous silicon/Silicon Schottky type structure, as a direct hydrogen sulphide fuel cell is demonstrated. The porous silicon filled with hydrochlorid acid was developed as a proton conduction membrane. The Au/Porous Silicon/Silicon cells were fabricated by first creating the porous silicon layer in single-crystalline Si using the anodic etching under illumination and then deposition Au catalyst layer onto the porous silicon. Using 80 mM H2S solution as fuel the open circuit voltage of 0.4 V was obtained and maximum power density of 30 W/m2 at room temperature was achieved. These results demonstrate that the Au/Porous Silicon/Silicon direct hydrogen sulphide fuel cell which uses H2S:dH2O solution as fuel and operates at room temperature can be considered as the most promising type of low cost fuel cell for small power-supply units.

Porous silicon nanocrystals in a silica aerogel matrix

PubMed Central

2012-01-01

Silicon nanoparticles of three types (oxide-terminated silicon nanospheres, micron-sized hydrogen-terminated porous silicon grains and micron-size oxide-terminated porous silicon grains) were incorporated into silica aerogels at the gel preparation stage. Samples with a wide range of concentrations were prepared, resulting in aerogels that were translucent (but weakly coloured) through to completely opaque for visible light over sample thicknesses of several millimetres. The photoluminescence of these composite materials and of silica aerogel without silicon inclusions was studied in vacuum and in the presence of molecular oxygen in order to determine whether there is any evidence for non-radiative energy transfer from the silicon triplet exciton state to molecular oxygen adsorbed at the silicon surface. No sensitivity to oxygen was observed from the nanoparticles which had partially H-terminated surfaces before incorporation, and so we conclude that the silicon surface has become substantially oxidised. Finally, the FTIR and Raman scattering spectra of the composites were studied in order to establish the presence of crystalline silicon; by taking the ratio of intensities of the silicon and aerogel Raman bands, we were able to obtain a quantitative measure of the silicon nanoparticle concentration independent of the degree of optical attenuation. PMID:22805684

Porous silicon nanocrystals in a silica aerogel matrix.

PubMed

Amonkosolpan, Jamaree; Wolverson, Daniel; Goller, Bernhard; Polisski, Sergej; Kovalev, Dmitry; Rollings, Matthew; Grogan, Michael D W; Birks, Timothy A

2012-07-17

Silicon nanoparticles of three types (oxide-terminated silicon nanospheres, micron-sized hydrogen-terminated porous silicon grains and micron-size oxide-terminated porous silicon grains) were incorporated into silica aerogels at the gel preparation stage. Samples with a wide range of concentrations were prepared, resulting in aerogels that were translucent (but weakly coloured) through to completely opaque for visible light over sample thicknesses of several millimetres. The photoluminescence of these composite materials and of silica aerogel without silicon inclusions was studied in vacuum and in the presence of molecular oxygen in order to determine whether there is any evidence for non-radiative energy transfer from the silicon triplet exciton state to molecular oxygen adsorbed at the silicon surface. No sensitivity to oxygen was observed from the nanoparticles which had partially H-terminated surfaces before incorporation, and so we conclude that the silicon surface has become substantially oxidised. Finally, the FTIR and Raman scattering spectra of the composites were studied in order to establish the presence of crystalline silicon; by taking the ratio of intensities of the silicon and aerogel Raman bands, we were able to obtain a quantitative measure of the silicon nanoparticle concentration independent of the degree of optical attenuation.

Photoluminescence of amorphous and crystalline silicon nanoclusters in silicon nitride and oxide superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shuleiko, D. V., E-mail: shuleyko.dmitriy@physics.msu.ru; Zabotnov, S. V.; Zhigunov, D. M.

2017-02-15

The photoluminescence properties of silicon nitride and oxide superlattices fabricated by plasmaenhanced chemical vapor deposition are studied. In the structures annealed at a temperature of 1150°C, photoluminescence peaks at about 1.45 eV are recorded. The peaks are defined by exciton recombination in silicon nanocrystals formed upon annealing. Along with the 1.45-eV peaks, a number of peaks defined by recombination at defects at the interface between the nanocrystals and silicon-nitride matrix are detected. The structures annealed at 900°C exhibit a number of photoluminescence peaks in the range 1.3–2.0 eV. These peaks are defined by both the recombination at defects and excitonmore » recombination in amorphous silicon nanoclusters formed at an annealing temperature of 900°C. The observed features of all of the photoluminescence spectra are confirmed by the nature of the photoluminescence kinetics.« less

Morphological Characterization of Silicone Hydrogels

NASA Astrophysics Data System (ADS)

Gido, Samuel

2007-03-01

Silicone hydrogel materials are used in the latest generation of extended wear soft contact lenses. To ensure comfort and eye health, these materials must simultaneously exhibit high oxygen permeability and high water permeability / hydrophilicity. The materials achieve these opposing requirements based on bicontinuous composite of nanoscale domains of oxygen permeable (silicones) and hydrophilic (water soluble polymer) materials. The microphase separated morphology of silicone hydrogel contact lens materials was imaged using field emission gun scanning transmission electron microscopy (FEGSTEM), and atomic force microscopy (AFM). Additional morphological information was provided by small angle X-ray scattering (SAXS). These results all indicate a nanophase separated structure of silicone rich (oxygen permeable) and carbon rich (water soluble polymer) domains separated on a length scale of about 10 nm.

Process of preparing tritiated porous silicon

DOEpatents

Tam, S.W.

1997-02-18

A process of preparing tritiated porous silicon is described in which porous silicon is equilibrated with a gaseous vapor containing HT/T{sub 2} gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon. 1 fig.

Match-bounded String Rewriting Systems

NASA Technical Reports Server (NTRS)

Geser, Alfons; Hofbauer, Dieter; Waldmann, Johannes

2003-01-01

We introduce a new class of automated proof methods for the termination of rewriting systems on strings. The basis of all these methods is to show that rewriting preserves regular languages. To this end, letters are annotated with natural numbers, called match heights. If the minimal height of all positions in a redex is h+1 then every position in the reduct will get height h+1. In a match-bounded system, match heights are globally bounded. Using recent results on deleting systems, we prove that rewriting by a match-bounded system preserves regular languages. Hence it is decidable whether a given rewriting system has a given match bound. We also provide a sufficient criterion for the abence of a match-bound. The problem of existence of a match-bound is still open. Match-boundedness for all strings can be used as an automated criterion for termination, for match-bounded systems are terminating. This criterion can be strengthened by requiring match-boundedness only for a restricted set of strings, for instance the set of right hand sides of forward closures.

Solar cells with gallium phosphide/silicon heterojunction

NASA Astrophysics Data System (ADS)

Darnon, Maxime; Varache, Renaud; Descazeaux, Médéric; Quinci, Thomas; Martin, Mickaël; Baron, Thierry; Muñoz, Delfina

2015-09-01

One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more transparent and more conducting emitter in place of the front amorphous silicon layers. We show that a transparent conducting oxide (TCO) is still necessary to laterally collect the current with thin GaP emitter. Larger contact resistance of GaP/TCO increases the series resistance compared to amorphous silicon. With the current process, losses in the IR region associated with silicon degradation during the surface preparation preceding GaP deposition counterbalance the gain from the UV region. A first cell efficiency of 9% has been obtained on ˜5×5 cm2 polished samples.

Direct band gap silicon crystals predicted by an inverse design method

NASA Astrophysics Data System (ADS)

Oh, Young Jun; Lee, In-Ho; Lee, Jooyoung; Kim, Sunghyun; Chang, Kee Joo

2015-03-01

Cubic diamond silicon has an indirect band gap and does not absorb or emit light as efficiently as other semiconductors with direct band gaps. Thus, searching for Si crystals with direct band gaps around 1.3 eV is important to realize efficient thin-film solar cells. In this work, we report various crystalline silicon allotropes with direct and quasi-direct band gaps, which are predicted by the inverse design method which combines a conformation space annealing algorithm for global optimization and first-principles density functional calculations. The predicted allotropes exhibit energies less than 0.3 eV per atom and good lattice matches, compared with the diamond structure. The structural stability is examined by performing finite-temperature ab initio molecular dynamics simulations and calculating the phonon spectra. The absorption spectra are obtained by solving the Bethe-Salpeter equation together with the quasiparticle G0W0 approximation. For several allotropes with the band gaps around 1 eV, photovoltaic efficiencies are comparable to those of best-known photovoltaic absorbers such as CuInSe2. This work is supported by the National Research Foundation of Korea (2005-0093845 and 2008-0061987), Samsung Science and Technology Foundation (SSTF-BA1401-08), KIAS Center for Advanced Computation, and KISTI (KSC-2013-C2-040).

Silicon production in a fluidized bed reactor

NASA Technical Reports Server (NTRS)

Rohatgi, N. K.

1986-01-01

Part of the development effort of the JPL in-house technology involved in the Flat-Plate Solar Array (FSA) Project was the investigation of a low-cost process to produce semiconductor-grade silicon for terrestrial photovoltaic cell applications. The process selected was based on pyrolysis of silane in a fluidized-bed reactor (FBR). Following initial investigations involving 1- and 2-in. diameter reactors, a 6-in. diameter, engineering-scale FBR was constructed to establish reactor performance, mechanism of silicon deposition, product morphology, and product purity. The overall mass balance for all experiments indicates that more than 90% of the total silicon fed into the reactor is deposited on silicon seed particles and the remaining 10% becomes elutriated fines. Silicon production rates were demonstrated of 1.5 kg/h at 30% silane concentration and 3.5 kg/h at 80% silane concentration. The mechanism of silicon deposition is described by a six-path process: heterogeneous deposition, homogeneous decomposition, coalescence, coagulation, scavenging, and heterogeneous growth on fines. The bulk of the growth silicon layer appears to be made up of small diameter particles. This product morphology lends support to the concept of the scavenging of homogeneously nucleated silicon.

Novel detectors for silicon based microdosimetry, their concepts and applications

NASA Astrophysics Data System (ADS)

Rosenfeld, Anatoly B.

2016-02-01

This paper presents an overview of the development of semiconductor microdosimetry and the most current (state-of-the-art) Silicon on Insulator (SOI) detectors for microdosimetry based mainly on research and development carried out at the Centre for Medical Radiation Physics (CMRP) at the University of Wollongong with collaborators over the last 18 years. In this paper every generation of CMRP SOI microdosimeters, including their fabrication, design, and electrical and charge collection characterisation are presented. A study of SOI microdosimeters in various radiation fields has demonstrated that under appropriate geometrical scaling, the response of SOI detectors with the well-known geometry of microscopically sensitive volumes will record the energy deposition spectra representative of tissue cells of an equivalent shape. This development of SOI detectors for microdosimetry with increased complexity has improved the definition of microscopic sensitive volume (SV), which is modelling the deposition of ionising energy in a biological cell, that are led from planar to 3D SOI detectors with an array of segmented microscopic 3D SVs. The monolithic ΔE-E silicon telescope, which is an alternative to the SOI silicon microdosimeter, is presented, and as an example, applications of SOI detectors and ΔE-E monolithic telescope for microdosimetery in proton therapy field and equivalent neutron dose measurements out of field are also presented. An SOI microdosimeter "bridge" with 3D SVs can derive the relative biological effectiveness (RBE) in 12C ion radiation therapy that matches the tissue equivalent proportional counter (TEPC) quite well, but with outstanding spatial resolution. The use of SOI technology in experimental microdosimetry offers simplicity (no gas system or HV supply), high spatial resolution, low cost, high count rates, and the possibility of integrating the system onto a single device with other types of detectors.

Fabricating solar cells with silicon nanoparticles

DOEpatents

Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

2014-09-02

A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

Method of forming crystalline silicon devices on glass

DOEpatents

McCarthy, Anthony M.

1995-01-01

A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics.

Tandem junction amorphous silicon solar cells

DOEpatents

Hanak, Joseph J.

1981-01-01

An amorphous silicon solar cell has an active body with two or a series of layers of hydrogenated amorphous silicon arranged in a tandem stacked configuration with one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon arranged in tandem configuration can have the same bandgap or differing bandgaps.

Rapid fabrication of a silicon modification layer on silicon carbide substrate.

PubMed

Bai, Yang; Li, Longxiang; Xue, Donglin; Zhang, Xuejun

2016-08-01

We develop a kind of magnetorheological (MR) polishing fluid for the fabrication of a silicon modification layer on a silicon carbide substrate based on chemical theory and actual polishing requirements. The effect of abrasive concentration in MR polishing fluid on material removal rate and removal function shape is investigated. We conclude that material removal rate will increase and tends to peak value as the abrasive concentration increases to 0.3 vol. %, and the removal function profile will become steep, which is a disadvantage to surface frequency error removal at the same time. The removal function stability is also studied and the results show that the prepared MR polishing fluid can satisfy actual fabrication requirements. An aspheric reflective mirror of silicon carbide modified by silicon is well polished by combining magnetorheological finishing (MRF) using two types of MR polishing fluid and computer controlled optical surfacing (CCOS) processes. The surface accuracy root mean square (RMS) is improved from 0.087λ(λ=632.8  nm) initially to 0.020λ(λ=632.8  nm) in 5.5 h total and the tool marks resulting from MRF are negligible. The PSD analysis results also shows that the final surface is uniformly polished.

Silicon Satellites: Picosats, Nanosats, and Microsats

NASA Technical Reports Server (NTRS)

Janson, Siegfried W.

1995-01-01

Silicon, the most abundant solid element in the Earth's lithosphere, is a useful material for spacecraft construction. Silicon is stronger than stainless steel, has a thermal conductivity about half that of aluminum, is transparent to much of the infrared radiation spectrum, and can form a stable oxide. These unique properties enable silicon to become most of the mass of a satellite, it can simultaneously function as structure, heat transfer system, radiation shield, optics, and semiconductor substrate. Semiconductor batch-fabrication techniques can produce low-power digital circuits, low-power analog circuits, silicon-based radio frequency circuits, and micro-electromechanical systems (MEMS) such as thrusters and acceleration sensors on silicon substrates. By exploiting these fabrication techniques, it is possible to produce highly-integrated satellites for a number of applications. This paper analyzes the limitations of silicon satellites due to size. Picosatellites (approximately 1 gram mass), nanosatellites (about 1 kg mass), and highly capable microsatellites (about 10 kg mass) can perform various missions with lifetimes of a few days to greater than a decade.

Plasma Enabled Fabrication of Silicon Carbide Nanostructures

NASA Astrophysics Data System (ADS)

Fang, Jinghua; Levchenko, Igor; Aramesh, Morteza; Rider, Amanda E.; Prawer, Steven; Ostrikov, Kostya (Ken)

Silicon carbide is one of the promising materials for the fabrication of various one- and two-dimensional nanostructures. In this chapter, we discuss experimental and theoretical studies of the plasma-enabled fabrication of silicon carbide quantum dots, nanowires, and nanorods. The discussed fabrication methods include plasma-assisted growth with and without anodic aluminium oxide membranes and with or without silane as a source of silicon. In the silane-free experiments, quartz was used as a source of silicon to synthesize the silicon carbide nanostructures in an environmentally friendly process. The mechanism of the formation of nanowires and nanorods is also discussed.

Process Research On Polycrystalline Silicon Material (PROPSM)

NASA Technical Reports Server (NTRS)

Culik, J. S.; Wohlgemuth, J. H.

1982-01-01

Performance limiting mechanisms in polycrystalline silicon are investigated by fabricating a matrix of solar cells of various thicknesses from polycrystalline silicon wafers of several bulk resistivities. The analysis of the results for the entire matrix indicates that bulk recombination is the dominant factor limiting the short circuit current in large grain (greater than 1 to 2 mm diameter) polycrystalline silicon, the same mechanism that limits the short circuit current in single crystal silicon. An experiment to investigate the limiting mechanisms of open circuit voltage and fill factor for large grain polycrystalline silicon is designed. Two process sequences to fabricate small cells are investigated.

A continuous silicon-coating facility

NASA Technical Reports Server (NTRS)

Butter, C.; Heaps, J. D.

1979-01-01

Automatic continuous silicon-coating facility is used to process 100 by 10 cm graphite-coated ceramic substrates for silicon solar cells. Process reduces contamination associated with conventional dip-coating processes, improving material service life.

Silicon-Based Anode and Method for Manufacturing the Same

NASA Technical Reports Server (NTRS)

Yushin, Gleb Nikolayevich (Inventor); Zdyrko, Bogdan (Inventor); Magasinski, Alexandre (Inventor); Luzinov, Igor (Inventor)

2017-01-01

A silicon-based anode comprising silicon, a carbon coating that coats the surface of the silicon, a polyvinyl acid that binds to at least a portion of the silicon, and vinylene carbonate that seals the interface between the silicon and the polyvinyl acid. Because of its properties, polyvinyl acid binders offer improved anode stability, tunable properties, and many other attractive attributes for silicon-based anodes, which enable the anode to withstand silicon cycles of expansion and contraction during charging and discharging.

Method of fabricating porous silicon carbide (SiC)

NASA Technical Reports Server (NTRS)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1995-01-01

Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

Latent palmprint matching.

PubMed

Jain, Anil K; Feng, Jianjiang

2009-06-01

The evidential value of palmprints in forensic applications is clear as about 30 percent of the latents recovered from crime scenes are from palms. While biometric systems for palmprint-based personal authentication in access control type of applications have been developed, they mostly deal with low-resolution (about 100 ppi) palmprints and only perform full-to-full palmprint matching. We propose a latent-to-full palmprint matching system that is needed in forensic applications. Our system deals with palmprints captured at 500 ppi (the current standard in forensic applications) or higher resolution and uses minutiae as features to be compatible with the methodology used by latent experts. Latent palmprint matching is a challenging problem because latent prints lifted at crime scenes are of poor image quality, cover only a small area of the palm, and have a complex background. Other difficulties include a large number of minutiae in full prints (about 10 times as many as fingerprints), and the presence of many creases in latents and full prints. A robust algorithm to reliably estimate the local ridge direction and frequency in palmprints is developed. This facilitates the extraction of ridge and minutiae features even in poor quality palmprints. A fixed-length minutia descriptor, MinutiaCode, is utilized to capture distinctive information around each minutia and an alignment-based minutiae matching algorithm is used to match two palmprints. Two sets of partial palmprints (150 live-scan partial palmprints and 100 latent palmprints) are matched to a background database of 10,200 full palmprints to test the proposed system. Despite the inherent difficulty of latent-to-full palmprint matching, rank-1 recognition rates of 78.7 and 69 percent, respectively, were achieved in searching live-scan partial palmprints and latent palmprints against the background database.

Evaluation of selected chemical processes for production of low-cost silicon phase 2. silicon material task, low-cost silicon solar array project

NASA Technical Reports Server (NTRS)

Blocher, J. M., Jr.; Browning, M. F.; Rose, E. E.; Thompson, W. B.; Schmitt, W. A.; Fippin, J. S.; Kidd, R. W.; Liu, C. Y.; Kerbler, P. S.; Ackley, W. R.

1978-01-01

Progress from October 1, 1977, through December 31, 1977, is reported in the design of the 50 MT/year experimental facility for the preparation of high purity silicon by the zinc vapor reduction of silicon tetrachloride in a fluidized bed of seed particles to form a free flowing granular product.

[Silicone in autoimmune diseases and cancer].

PubMed

Elejabeitia, J

1999-01-01

In 1992 the Food and Drug Administration (FDA) announced the restriction of silicone gel-filled breast implants until research protocol studies evaluate the relationship of silicone to connective tissue diseases, and the association of the silicone implants with breast carcinoma. Since them comprehensive epidemiologic studies have concluded that there is no connection between breast implants and the known connective tissue diseases or between the implants and breast carcinoma. During the same year, The American College of Rheumatology said that it have not been demonstrated the relationship between silicone gel breast implants and any systemic disease. Although this, the FDA restriction continues.

Method of forming crystalline silicon devices on glass

DOEpatents

McCarthy, A.M.

1995-03-21

A method is disclosed for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics. 7 figures.

Silicon carbide thyristor

NASA Technical Reports Server (NTRS)

Edmond, John A. (Inventor); Palmour, John W. (Inventor)

1996-01-01

The SiC thyristor has a substrate, an anode, a drift region, a gate, and a cathode. The substrate, the anode, the drift region, the gate, and the cathode are each preferably formed of silicon carbide. The substrate is formed of silicon carbide having one conductivity type and the anode or the cathode, depending on the embodiment, is formed adjacent the substrate and has the same conductivity type as the substrate. A drift region of silicon carbide is formed adjacent the anode or cathode and has an opposite conductivity type as the anode or cathode. A gate is formed adjacent the drift region or the cathode, also depending on the embodiment, and has an opposite conductivity type as the drift region or the cathode. An anode or cathode, again depending on the embodiment, is formed adjacent the gate or drift region and has an opposite conductivity type than the gate.

Fabrication of p-type porous silicon nanowire with oxidized silicon substrate through one-step MACE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Shaoyuan; Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093; Ma, Wenhui, E-mail: mwhsilicon@163.com

2014-05-01

In this paper, the simple pre-oxidization process is firstly used to treat the starting silicon wafer, and then MPSiNWs are successfully fabricated from the moderately doped wafer by one-step MACE technology in HF/AgNO{sub 3} system. The PL spectrum of MPSiNWs obtained from the oxidized silicon wafers show a large blue-shift, which can be attributed to the deep Q. C. effect induced by numerous mesoporous structures. The effects of HF and AgNO{sub 3} concentration on formation of SiNWs were carefully investigated. The results indicate that the higher HF concentration is favorable to the growth of SiNWs, and the density of SiNWsmore » is significantly reduced when Ag{sup +} ions concentrations are too high. The deposition behaviors of Ag{sup +} ions on oxidized and unoxidized silicon surface were studied. According to the experimental results, a model was proposed to explain the formation mechanism of porous SiNWs by etching the oxidized starting silicon. - Graphical abstract: Schematic cross-sectional views of PSiNWs array formation by etching oxidized silicon wafer in HF/AgNO{sub 3} solution. (A) At the starting point; (B) during the etching process; and (C) after Ag dendrites remove. - Highlights: • Prior to etching, a simple pre-oxidation is firstly used to treat silicon substrate. • The medially doped p-type MPSiNWs are prepared by one-step MACE. • Deposition behaviors of Ag{sup +} ions on oxidized and unoxidized silicon are studied. • A model is finally proposed to explain the formation mechanism of PSiNWs.« less

Rapid Solid-State Metathesis Routes to Nanostructured Silicon-Germainum

NASA Technical Reports Server (NTRS)

Rodriguez, Marc (Inventor); Kaner, Richard B. (Inventor); Bux, Sabah K. (Inventor); Fleurial, Jean-Pierre (Inventor)

2014-01-01

Methods for producing nanostructured silicon and silicon-germanium via solid state metathesis (SSM). The method of forming nanostructured silicon comprises the steps of combining a stoichiometric mixture of silicon tetraiodide (SiI4) and an alkaline earth metal silicide into a homogeneous powder, and initating the reaction between the silicon tetraiodide (SiI4) with the alkaline earth metal silicide. The method of forming nanostructured silicon-germanium comprises the steps of combining a stoichiometric mixture of silicon tetraiodide (SiI4) and a germanium based precursor into a homogeneous powder, and initiating the reaction between the silicon tetraiodide (SiI4) with the germanium based precursors.

Silicon Micro- and Nanofabrication for Medicine

PubMed Central

Fine, Daniel; Goodall, Randy; Bansal, Shyam S.; Chiappini, Ciro; Hosali, Sharath; van de Ven, Anne L.; Srinivasan, Srimeenkashi; Liu, Xuewu; Godin, Biana; Brousseau, Louis; Yazdi, Iman K.; Fernandez-Moure, Joseph; Tasciotti, Ennio; Wu, Hung-Jen; Hu, Ye; Klemm, Steve; Ferrari, Mauro

2013-01-01

This manuscript constitutes a review of several innovative biomedical technologies fabricated using the precision and accuracy of silicon micro- and nanofabrication. The technologies to be reviewed are subcutaneous nanochannel drug delivery implants for the continuous tunable zero-order release of therapeutics, multi-stage logic embedded vectors for the targeted systemic distribution of both therapeutic and imaging contrast agents, silicon and porous silicon nanowires for investigating cellular interactions and processes as well as for molecular and drug delivery applications, porous silicon (pSi) as inclusions into biocomposites for tissue engineering, especially as it applies to bone repair and regrowth, and porous silica chips for proteomic profiling. In the case of the biocomposites, the specifically designed pSi inclusions not only add to the structural robustness, but can also promote tissue and bone regrowth, fight infection, and reduce pain by releasing stimulating factors and other therapeutic agents stored within their porous network. The common material thread throughout all of these constructs, silicon and its associated dielectrics (silicon dioxide, silicon nitride, etc.), can be precisely and accurately machined using the same scalable micro- and nanofabrication protocols that are ubiquitous within the semiconductor industry. These techniques lend themselves to the high throughput production of exquisitely defined and monodispersed nanoscale features that should eliminate architectural randomness as a source of experimental variation thereby potentially leading to more rapid clinical translation. PMID:23584841

A "Sticky" Mucin-Inspired DNA-Polysaccharide Binder for Silicon and Silicon-Graphite Blended Anodes in Lithium-Ion Batteries.

PubMed

Kim, Sunjin; Jeong, You Kyeong; Wang, Younseon; Lee, Haeshin; Choi, Jang Wook

2018-05-14

New binder concepts have lately demonstrated improvements in the cycle life of high-capacity silicon anodes. Those binder designs adopt adhesive functional groups to enhance affinity with silicon particles and 3D network conformation to secure electrode integrity. However, homogeneous distribution of silicon particles in the presence of a substantial volumetric content of carbonaceous components (i.e., conductive agent, graphite, etc.) is still difficult to achieve while the binder maintains its desired 3D network. Inspired by mucin, the amphiphilic macromolecular lubricant, secreted on the hydrophobic surface of gastrointestine to interface aqueous serous fluid, here, a renatured DNA-alginate amphiphilic binder for silicon and silicon-graphite blended electrodes is reported. Mimicking mucin's structure comprised of a hydrophobic protein backbone and hydrophilic oligosaccharide branches, the renatured DNA-alginate binder offers amphiphilicity from both components, along with a 3D fractal network structure. The DNA-alginate binder facilitates homogeneous distribution of electrode components in the electrode as well as its enhanced adhesion onto a current collector, leading to improved cyclability in both silicon and silicon-graphite blended electrodes. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Multifunctional silicon surfaces: reaction of dichlorocarbene generated from Seyferth reagent with hydrogen-terminated silicon (111) surfaces.

PubMed

Liu, Wenjun; Sharp, Ian D; Tilley, T Don

2014-01-14

Insertion of dichlorocarbene (:CCl2), generated by decomposition of the Seyferth reagent PhHgCCl2Br, into the Si-H bond of a tertiary silane to form a Si-CCl2H group is an efficient homogeneous, molecular transformation. A heterogeneous version of this reaction, between PhHgCCl2Br and a silicon (111) surface terminated by tertiary Si-H bonds, was studied using a combination of surface-sensitive infrared and X-ray photoelectron spectroscopies. The insertion of dichlorocarbene into surface Si-H bonds parallels the corresponding reaction of silanes in solution, to produce surface-bound dichloromethyl groups (Si-CCl2H) covering ∼25% of the silicon surface sites. A significant fraction of the remaining Si-H bonds on the surface was converted to Si-Cl/Br groups during the same reaction, with PhHgCCl2Br serving as a halogen atom source. The presence of two distinct environments for the chlorine atoms (Si-CCl2H and Si-Cl) and one type of bromine atom (Si-Br) was confirmed by Cl 2p, Br 3d, and C 1s X-ray photoelectron spectroscopy. The formation of reactive, halogen-terminated atop silicon sites was also verified by reaction with sodium azide or the Grignard reagent (CH3MgBr), to produce Si-N3 or Si-Me functionalities, respectively. Thus, reaction of a hydrogen-terminated silicon (111) surface with PhHgCCl2Br provides a facile route to multifunctional surfaces possessing both stable silicon-carbon and labile silicon-halogen sites, in a single pot synthesis. The reactive silicon-halogen groups can be utilized for subsequent transformations and, potentially, the construction of more complex organic-silicon hybrid systems.

Heat exchanger-ingot casting/slicing process, phase 1: Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

NASA Technical Reports Server (NTRS)

Schmid, F.; Khattak, C. P.

1977-01-01

A controlled growth, heat-flow and cool-down process is described that yielded silicon with a high degree of single crystallinity. Even when the seed melted out, very large grains formed. Solar cell samples made from cast material yielded conversion efficiency of over 9%. Representative characterizations of grown silicon demonstrated a dislocation density of less than 100/sq cm and a minority carrier diffusion length of 31 micron. The source of silicon carbide in silicon ingots was identified to be from graphite retainers in contact with silica crucibles. Higher growth rates were achieved with the use of a graphite plug at the bottom of the silica crucible.

Effect of deep cryogenic temperature on silicon-on-insulator CMOS mismatch: A circuit designer’s perspective

NASA Astrophysics Data System (ADS)

Das, Kushal; Lehmann, Torsten

2014-07-01

The effect of ultra low operating temperature on mismatch among identically designed Silicon-on-Sapphire CMOS devices is investigated in detail from a circuit design view point. The evolution of transistor matching properties for different operating conditions at both room and 4.2 K temperature are presented. The statistical analysis reveals that mismatch at low temperature is effectively unrelated to that at room temperature, which disagrees with previously published literature. The measurement data was used to extract key transistor parameters and the consequence of temperature lowering on their respective variance is estimated. We find that standard deviation of the threshold-voltage mismatch deteriorates by a factor ∼2 at 4.2 K temperature. Similar to room temperature operation, mismatch at 4.2 K is bias point dependent and the degradation of matching at very low temperature depends to some extent on how the bias point shifts upon cooling.

Solar silicon via the Dow Corning process

NASA Technical Reports Server (NTRS)

Hunt, L. P.; Dosaj, V. D.

1979-01-01

Technical feasibility for high volume production of solar cell-grade silicon is investigated. The process consists of producing silicon from pure raw materials via the carbothermic reduction of quartz. This silicon was then purified to solar grade by impurity segregation during Czochralski crystal growth. Commercially available raw materials were used to produce 100 kg quantities of silicon during 60 hour periods in a direct arc reactor. This silicon produced single crystalline ingot, during a second Czochralski pull, that was fabricated into solar cells having efficiencies ranging from 8.2 percent to greater than 14 percent. An energy analysis of the entire process indicated a 5 month payback time.

Quantitative Analysis of Defects in Silicon. [to predict energy conversion efficiency of silicon samples for solar cells

NASA Technical Reports Server (NTRS)

Natesh, R.; Smith, J. M.; Qidwai, H. A.; Bruce, T.

1979-01-01

The evaluation and prediction of the conversion efficiency for a variety of silicon samples with differences in structural defects, such as grain boundaries, twin boundaries, precipitate particles, dislocations, etc. are discussed. Quantitative characterization of these structural defects, which were revealed by etching the surface of silicon samples, is performed by using an image analyzer. Due to different crystal growth and fabrication techniques the various types of silicon contain a variety of trace impurity elements and structural defects. The two most important criteria in evaluating the various silicon types for solar cell applications are cost and conversion efficiency.

Flotation of Metallurgical Grade Silicon and Silicon Metal from Slag by Selective Hydrogen Fluoride-Assisted Flotation

NASA Astrophysics Data System (ADS)

Larsen, E.; Kleiv, R. A.

2017-12-01

Flotation experiments performed on metallurgical grade silicon have demonstrated that silicon (Si) can be floated in diluted solutions of hydrogen fluoride (HF) and a frother. The recovery was found to depend on HF conditioning time, frother type, and the concentration of both HF and frother. Although Brij 58 produced the highest recoveries of the frothers that was tested, good recoveries were also obtained for Flotanol C07. Chemical analyses showed that the flotation products were purer than the corresponding feed materials, and that most impurity elements were concentrated in the tailings. A case study on cleaning of slag containing 36 pct metallurgical silicon showed promising results concerning the recovery of silicon by flotation.

Silicon material task. Part 3: Low-cost silicon solar array project

NASA Technical Reports Server (NTRS)

Roques, R. A.; Coldwell, D. M.

1977-01-01

The feasibility of a process for carbon reduction of low impurity silica in a plasma heat source was investigated to produce low-cost solar-grade silicon. Theoretical aspects of the reaction chemistry were studied with the aid of a computer program using iterative free energy minimization. These calculations indicate a threshold temperature exists at 2400 K below which no silicon is formed. The computer simulation technique of molecular dynamics was used to study the quenching of product species.

Ocular silicon distribution and clearance following intravitreal injection of porous silicon microparticles

PubMed Central

Nieto, Alejandra; Hou, Huiyuan; Sailor, Michael J.; Freeman, William R.; Cheng, Lingyun

2013-01-01

Porous silicon (pSi) microparticles have been investigated for intravitreal drug delivery and demonstrated good biocompatibility. With the appropriate surface chemistry, pSi can reside in vitreous for months or longer. However, ocular distribution and clearance pathway of its degradation product, silicic acid, are not well understood. In the current study, rabbit ocular tissue was collected at different time point following fresh pSi (day 1, 5, 9, 16, and 21) or oxidized pSi (day 3, 7, 14, 21, and 35) intravitreal injection. In addition, dual-probe simultaneous microdialysis of aqueous and vitreous humor was performed following a bolus intravitreal injection of 0.25 mL silicic acid (150 μg/mL) and six consecutive microdialysates were collected every 20 min. Silicon was quantified from the samples using inductively coupled plasma-optical emission spectroscopy. The study showed that following the intravitreal injection of oxidized pSi, free silicon was consistently higher in the aqueous than in the retina (8.1 ± 6.5 vs. 3.4 ± 3.9 μg/mL, p = 0.0031). The area under the concentration-time curve (AUC) of the retina was only about 24% that of the aqueous. The mean residence time was 16 days for aqueous, 13 days for vitreous, 6 days for retina, and 18 days for plasma. Similarly, following intravitreal fresh pSi, free silicon was also found higher in aqueous than in retina (7 ± 4.7 vs. 3.4 ± 4.1 μg/mL, p = 0.014). The AUC for the retina was about 50% of the AUC for the aqueous. The microdialysis revealed the terminal half-life of free silicon in the aqueous was 30 min and 92 min in the vitreous; the AUC for aqueous accounted for 38% of the AUC for vitreous. Our studies indicate that aqueous humor is a significant pathway for silicon egress from the eye following intravitreal injection of pSi crystals. PMID:24036388

Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nagamatsu, Ken A., E-mail: knagamat@princeton.edu; Man, Gabriel; Jhaveri, Janam

2015-03-23

In this work, we use an electron-selective titanium dioxide (TiO{sub 2}) heterojunction contact to silicon to block minority carrier holes in the silicon from recombining at the cathode contact of a silicon-based photovoltaic device. We present four pieces of evidence demonstrating the beneficial effect of adding the TiO{sub 2} hole-blocking layer: reduced dark current, increased open circuit voltage (V{sub OC}), increased quantum efficiency at longer wavelengths, and increased stored minority carrier charge under forward bias. The importance of a low rate of recombination of minority carriers at the Si/TiO{sub 2} interface for effective blocking of minority carriers is quantitatively described.more » The anode is made of a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) heterojunction to silicon which forms a hole selective contact, so that the entire device is made at a maximum temperature of 100 °C, with no doping gradients or junctions in the silicon. A low rate of recombination of minority carriers at the Si/TiO{sub 2} interface is crucial for effective blocking of minority carriers. Such a pair of complementary carrier-selective heterojunctions offers a path towards high-efficiency silicon solar cells using relatively simple and near-room temperature fabrication techniques.« less

Electronic and Optical Properties of Novel Phases of Silicon and Silicon-Based Derivatives

NASA Astrophysics Data System (ADS)

Ong, Chin Shen; Choi, Sangkook; Louie, Steven

2014-03-01

The vast majority of solar cells in the market today are made from crystalline silicon in the diamond-cubic phase. Nonetheless, diamond-cubic Si has an intrinsic disadvantage: it has an indirect band gap with a large energy difference between the direct gap and the indirect gap. In this work, we perform a careful study of the electronic and optical properties of a newly discovered cubic-Si20 phase of Si that is found to sport a direct band gap. In addition, other silicon-based derivatives have also been discovered and found to be thermodynamically metastable. We carry out ab initio GW and GW-BSE calculations for the quasiparticle excitations and optical spectra, respectively, of these new phases of silicon and silicon-based derivatives. This work was supported by NSF grant No. DMR10-1006184 and U.S. DOE under Contract No. DE-AC02-05CH11231. Computational resources have been provided by DOE at Lawrence Berkeley National Laboratory's NERSC facility and the NSF through XSEDE resources at NICS.

Silicon carbide sintered body manufactured from silicon carbide powder containing boron, silicon and carbonaceous additive

NASA Technical Reports Server (NTRS)

Tanaka, Hidehiko

1987-01-01

A silicon carbide powder of a 5-micron grain size is mixed with 0.15 to 0.60 wt% mixture of a boron compound, i.e., boric acid, boron carbide (B4C), silicon boride (SiB4 or SiB6), aluminum boride, etc., and an aluminum compound, i.e., aluminum, aluminum oxide, aluminum hydroxide, aluminum carbide, etc., or aluminum boride (AlB2) alone, in such a proportion that the boron/aluminum atomic ratio in the sintered body becomes 0.05 to 0.25 wt% and 0.05 to 0.40 wt%, respectively, together with a carbonaceous additive to supply enough carbon to convert oxygen accompanying raw materials and additives into carbon monoxide.

Refining of metallurgical-grade silicon

NASA Technical Reports Server (NTRS)

Dietl, J.

1986-01-01

A basic requirement of large scale solar cell fabrication is to provide low cost base material. Unconventional refining of metallurical grade silicon represents one of the most promising ways of silicon meltstock processing. The refining concept is based on an optimized combination of metallurgical treatments. Commercially available crude silicon, in this sequence, requires a first pyrometallurgical step by slagging, or, alternatively, solvent extraction by aluminum. After grinding and leaching, high purity qualtiy is gained as an advanced stage of refinement. To reach solar grade quality a final pyrometallurgical step is needed: liquid-gas extraction.

Process for Polycrystalline film silicon growth

DOEpatents

Wang, Tihu; Ciszek, Theodore F.

2001-01-01

A process for depositing polycrystalline silicon on substrates, including foreign substrates, occurs in a chamber at about atmospheric pressure, wherein a temperature gradient is formed, and both the atmospheric pressure and the temperature gradient are maintained throughout the process. Formation of a vapor barrier within the chamber that precludes exit of the constituent chemicals, which include silicon, iodine, silicon diiodide, and silicon tetraiodide. The deposition occurs beneath the vapor barrier. One embodiment of the process also includes the use of a blanketing gas that precludes the entrance of oxygen or other impurities. The process is capable of repetition without the need to reset the deposition zone conditions.

Matching Matched Filtering with Deep Networks for Gravitational-Wave Astronomy.

PubMed

Gabbard, Hunter; Williams, Michael; Hayes, Fergus; Messenger, Chris

2018-04-06

We report on the construction of a deep convolutional neural network that can reproduce the sensitivity of a matched-filtering search for binary black hole gravitational-wave signals. The standard method for the detection of well-modeled transient gravitational-wave signals is matched filtering. We use only whitened time series of measured gravitational-wave strain as an input, and we train and test on simulated binary black hole signals in synthetic Gaussian noise representative of Advanced LIGO sensitivity. We show that our network can classify signal from noise with a performance that emulates that of match filtering applied to the same data sets when considering the sensitivity defined by receiver-operator characteristics.

Matching Matched Filtering with Deep Networks for Gravitational-Wave Astronomy

NASA Astrophysics Data System (ADS)

Gabbard, Hunter; Williams, Michael; Hayes, Fergus; Messenger, Chris

2018-04-01

We report on the construction of a deep convolutional neural network that can reproduce the sensitivity of a matched-filtering search for binary black hole gravitational-wave signals. The standard method for the detection of well-modeled transient gravitational-wave signals is matched filtering. We use only whitened time series of measured gravitational-wave strain as an input, and we train and test on simulated binary black hole signals in synthetic Gaussian noise representative of Advanced LIGO sensitivity. We show that our network can classify signal from noise with a performance that emulates that of match filtering applied to the same data sets when considering the sensitivity defined by receiver-operator characteristics.

System and method for liquid silicon containment

DOEpatents

Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

2013-05-28

This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding member adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

System and method for liquid silicon containment

DOEpatents

Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

2014-06-03

This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding ember adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

Electron Beam "Writes" Silicon On Sapphire

NASA Technical Reports Server (NTRS)

Heinemann, Klaus

1988-01-01

Method of growing silicon on sapphire substrate uses beam of electrons to aid growth of semiconductor material. Silicon forms as epitaxial film in precisely localized areas in micron-wide lines. Promising fabrication method for fast, densely-packed integrated circuits. Silicon deposited preferentially in contaminated substrate zones and in clean zone irradiated by electron beam. Electron beam, like surface contamination, appears to stimulate decomposition of silane atmosphere.

Finishing Techniques for Silicon Nitride Bearings

DTIC Science & Technology

1976-03-01

finishing procedures. Rolling contact fatigue lives of silicon nitride with selected smoother finishes tested at 800 ksi Hertz stress were an order...grinding. Rolling contact fatigue lives of silicon nitride with selected smoother finishes tested at 800 ksi Hertz stress were an order of magnitude...lives of silicon nitride with selected smoother finishes tested at 800 ksi Hertz stress were an order of magnitude longer than those

Silicon micro-mold and method for fabrication

DOEpatents

Morales, Alfredo M.

2005-01-11

The present invention describes a method for rapidly fabricating a robust 3-dimensional silicon micro-mold for use in preparing complex metal micro-components. The process begins by depositing a conductive metal layer onto one surface of a silicon wafer. A thin photoresist and a standard lithographic mask are then used to transfer a trace image pattern onto the opposite surface of the wafer by exposing and developing the resist. The exposed portion of the silicon substrate is anisotropically etched through the wafer thickness down to conductive metal layer to provide an etched pattern consisting of a series of rectilinear channels and recesses in the silicon which serve as the silicon micro-mold. Microcomponents are prepared with this mold by first filling the mold channels and recesses with a metal deposit, typically by electroplating, and then removing the silicon micro-mold by chemical etching.

Process Research on Polycrystalline Silicon Material (PROPSM)

NASA Technical Reports Server (NTRS)

Culik, J. S.

1983-01-01

The performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was investigated by measuring the illuminated current voltage (I-V) characteristics of the minicell wafer set. The average short circuit current on different wafers is 3 to 14 percent lower than that of single crystal Czochralski silicon. The scatter was typically less than 3 percent. The average open circuit voltage is 20 to 60 mV less than that of single crystal silicon. The scatter in the open circuit voltage of most of the polycrystalline silicon wafers was 15 to 20 mV, although two wafers had significantly greater scatter than this value. The fill factor of both polycrystalline and single crystal silicon cells was typically in the range of 60 to 70 percent; however several polycrystalline silicon wafers have fill factor averages which are somewhat lower and have a significantly larger degree of scatter.

Silicon Based Anodes for Li-Ion Batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Jiguang; Wang, Wei; Xiao, Jie

2012-06-15

Silicon is environmentally benign and ubiquitous. Because of its high specific capacity, it is considered one of the most promising candidates to replace the conventional graphite negative electrode used in today's Li ion batteries. Silicon has a theoretical specific capacity of nearly 4200 mAh/g (Li21Si5), which is 10 times larger than the specific capacity of graphite (LiC6, 372 mAh/g). However, the high capacity of silicon is associated with huge volume changes (more than 300 percent) when alloyed with lithium, which can cause severe cracking and pulverization of the electrode and lead to significant capacity loss. Significant scientific research has beenmore » conducted to circumvent the deterioration of silicon based anode materials during cycling. Various strategies, such as reduction of particle size, generation of active/inactive composites, fabrication of silicon based thin films, use of alternative binders, and the synthesis of 1-D silicon nanostructures have been implemented by a number of research groups. Fundamental mechanistic research has also been performed to better understand the electrochemical lithiation and delithiation process during cycling in terms of crystal structure, phase transitions, morphological changes, and reaction kinetics. Although efforts to date have not attained a commercially viable Si anode, further development is expected to produce anodes with three to five times the capacity of graphite. In this chapter, an overview of research on silicon based anodes used for lithium-ion battery applications will be presented. The overview covers electrochemical alloying of the silicon with lithium, mechanisms responsible for capacity fade, and methodologies adapted to overcome capacity degradation observed during cycling. The recent development of silicon nanowires and nanoparticles with significantly improved electrochemical performance will also be discussed relative to the mechanistic understanding. Finally, future directions on the

Porous silicon technology for integrated microsystems

NASA Astrophysics Data System (ADS)

Wallner, Jin Zheng

With the development of micro systems, there is an increasing demand for integrable porous materials. In addition to those conventional applications, such as filtration, wicking, and insulating, many new micro devices, including micro reactors, sensors, actuators, and optical components, can benefit from porous materials. Conventional porous materials, such as ceramics and polymers, however, cannot meet the challenges posed by micro systems, due to their incompatibility with standard micro-fabrication processes. In an effort to produce porous materials that can be used in micro systems, porous silicon (PS) generated by anodization of single crystalline silicon has been investigated. In this work, the PS formation process has been extensively studied and characterized as a function of substrate type, crystal orientation, doping concentration, current density and surfactant concentration and type. Anodization conditions have been optimized for producing very thick porous silicon layers with uniform pore size, and for obtaining ideal pore morphologies. Three different types of porous silicon materials: meso porous silicon, macro porous silicon with straight pores, and macro porous silicon with tortuous pores, have been successfully produced. Regular pore arrays with controllable pore size in the range of 2mum to 6mum have been demonstrated as well. Localized PS formation has been achieved by using oxide/nitride/polysilicon stack as masking materials, which can withstand anodization in hydrofluoric acid up to twenty hours. A special etching cell with electrolytic liquid backside contact along with two process flows has been developed to enable the fabrication of thick macro porous silicon membranes with though wafer pores. For device assembly, Si-Au and In-Au bonding technologies have been developed. Very low bonding temperature (˜200°C) and thick/soft bonding layers (˜6mum) have been achieved by In-Au bonding technology, which is able to compensate the potentially

Silicon (100)/SiO2 by XPS