Phosphorescent Organic Light-Emitting Devices: Working Principle and Iridium Based Emitter Materials

PubMed Central

Kappaun, Stefan; Slugovc, Christian; List, Emil J. W.

2008-01-01

Even though organic light-emitting device (OLED) technology has evolved to a point where it is now an important competitor to liquid crystal displays (LCDs), further scientific efforts devoted to the design, engineering and fabrication of OLEDs are required for complete commercialization of this technology. Along these lines, the present work reviews the essentials of OLED technology putting special focus on the general working principle of single and multilayer OLEDs, fluorescent and phosphorescent emitter materials as well as transfer processes in host materials doped with phosphorescent dyes. Moreover, as a prototypical example of phosphorescent emitter materials, a brief discussion of homo- and heteroleptic iridium(III) complexes is enclosed concentrating on their synthesis, photophysical properties and approaches for realizing iridium based phosphorescent polymers. PMID:19325819

Correct implementation of polarization constants in wurtzite materials and impact on III-nitrides

DOE PAGES

Dreyer, Cyrus E.; Janotti, Anderson; Van de Walle, Chris G.; ...

2016-06-20

Here, accurate values for polarization discontinuities between pyroelectric materials are critical for understanding and designing the electronic properties of heterostructures. For wurtzite materials, the zincblende structure has been used in the literature as a reference to determine the effective spontaneous polarization constants. We show that, because the zincblende structure has a nonzero formal polarization, this method results in a spurious contribution to the spontaneous polarization differences between materials. In addition, we address the correct choice of "improper" versus "proper" piezoelectric constants. For the technologically important III-nitride materials GaN, AlN, and InN, we determine polarization discontinuities using a consistent reference basedmore » on the layered hexagonal structure and the correct choice of piezoelectric constants, and discuss the results in light of available experimental data.« less

Innovation processes in technologies for the processing of refractory mineral raw materials

NASA Astrophysics Data System (ADS)

Chanturiya, V. A.

2008-12-01

Analysis of the grade of mineral resources of Russia and other countries shows that end products that are competitive in terms of both technological and environmental criteria in the world market can only be obtained by the development and implementation of progressive technologies based on the up-to-date achievements of fundamental sciences. The essence of modern innovation processes in technologies developed in Russia for the complex and comprehensive processing of refractory raw materials with a complex composition is ascertained. These processes include (i) radiometric methods of concentration of valuable components, (ii) high-energy methods of disintegration of highly dispersed mineral components, and (iii) electrochemical methods of water conditioning to obtain target products for solving specific technological problems.

Thrust Chamber Material Technology Program

DTIC Science & Technology

1989-03-01

about 5 percent lower than those of NASA.Z. Alloy 1035 was essentially equivalent to NASA-Z. However, Alloy 1032, containing titanium, exhibited such...Characterization Methods .................................... 33 5 Evaluation Methods ......................................................... 37 III...115 5 Discussion ..................................................................... 120 V ALLOY CHARACTERIZATION

Metastable Intermolecular Composites (MIC) Primers for Small Caliber Cartridges and Cartridge Actuated Devices

DTIC Science & Technology

2009-07-01

24 iii ACRONYMS AND ABBREVIATIONS ATF Armaments Technology Facility ATK Alliant Techsystems, Inc. ARDEC Armament Research...Technology Facility ( ATF ) firings there, and was instrumental in producing the primers and loading the cartridges needed for the supplemental...and CADs known as the percussion primer. The novel properties associated with nanostructure materials have resulted in the development of thermite

Automotive Manufacturing Processes. Volume III - Casting and Forging Processes

DOT National Transportation Integrated Search

1981-02-01

Extensive material substitution and resizing of the domestic automotive fleet, as well as the introduction of new technologies, will require major changes in the techniques and equipment used in the various manufacturing processes employed in the pro...

Raising the one-sun conversion efficiency of III-V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions

NASA Astrophysics Data System (ADS)

Essig, Stephanie; Allebé, Christophe; Remo, Timothy; Geisz, John F.; Steiner, Myles A.; Horowitz, Kelsey; Barraud, Loris; Ward, J. Scott; Schnabel, Manuel; Descoeudres, Antoine; Young, David L.; Woodhouse, Michael; Despeisse, Matthieu; Ballif, Christophe; Tamboli, Adele

2017-09-01

Today's dominant photovoltaic technologies rely on single-junction devices, which are approaching their practical efficiency limit of 25-27%. Therefore, researchers are increasingly turning to multi-junction devices, which consist of two or more stacked subcells, each absorbing a different part of the solar spectrum. Here, we show that dual-junction III-V//Sidevices with mechanically stacked, independently operated III-V and Si cells reach cumulative one-sun efficiencies up to 32.8%. Efficiencies up to 35.9% were achieved when combining a GaInP/GaAs dual-junction cell with a Si single-junction cell. These efficiencies exceed both the theoretical 29.4% efficiency limit of conventional Si technology and the efficiency of the record III-V dual-junction device (32.6%), highlighting the potential of Si-based multi-junction solar cells. However, techno-economic analysis reveals an order-of-magnitude disparity between the costs for III-V//Si tandem cells and conventional Si solar cells, which can be reduced if research advances in low-cost III-V growth techniques and new substrate materials are successful.

Unraveling the Mystery of the Blue Fog: Structure, Properties, and Applications of Amorphous Blue Phase III.

PubMed

Gandhi, Sahil Sandesh; Chien, Liang-Chy

2017-12-01

The amorphous blue phase III of cholesteric liquid crystals, also known as the "blue fog," are among the rising stars in materials science that can potentially be used to develop next-generation displays with the ability to compete toe-to-toe with disruptive technologies like organic light-emitting diodes. The structure and properties of the practically unobservable blue phase III have eluded scientists for more than a century since it was discovered. This progress report reviews the developments in this field from both fundamental and applied research perspectives. The first part of this progress report gives an overview of the 130-years-long scientific tour-de-force that very recently resulted in the revelation of the mysterious structure of blue phase III. The second part reviews progress made in the past decade in developing electrooptical, optical, and photonic devices based on blue phase III. The strong and weak aspects of the development of these devices are underlined and criticized, respectively. The third- and-final part proposes ideas for further improvement in blue phase III technology to make it feasible for commercialization and widespread use. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optical and Electronic NOx Sensors for Applications in Mechatronics

PubMed Central

Di Franco, Cinzia; Elia, Angela; Spagnolo, Vincenzo; Scamarcio, Gaetano; Lugarà, Pietro Mario; Ieva, Eliana; Cioffi, Nicola; Torsi, Luisa; Bruno, Giovanni; Losurdo, Maria; Garcia, Michael A.; Wolter, Scott D.; Brown, April; Ricco, Mario

2009-01-01

Current production and emerging NOx sensors based on optical and nanomaterials technologies are reviewed. In view of their potential applications in mechatronics, we compared the performance of: i) Quantum cascade lasers (QCL) based photoacoustic (PA) systems; ii) gold nanoparticles as catalytically active materials in field-effect transistor (FET) sensors, and iii) functionalized III-V semiconductor based devices. QCL-based PA sensors for NOx show a detection limit in the sub part-per-million range and are characterized by high selectivity and compact set-up. Electrochemically synthesized gold-nanoparticle FET sensors are able to monitor NOx in a concentration range from 50 to 200 parts per million and are suitable for miniaturization. Porphyrin-functionalized III-V semiconductor materials can be used for the fabrication of a reliable NOx sensor platform characterized by high conductivity, corrosion resistance, and strong surface state coupling. PMID:22412315

Rapid identification of Enterobacter hormaechei and Enterobacter cloacae genetic cluster III.

PubMed

Ohad, S; Block, C; Kravitz, V; Farber, A; Pilo, S; Breuer, R; Rorman, E

2014-05-01

Enterobacter cloacae complex bacteria are of both clinical and environmental importance. Phenotypic methods are unable to distinguish between some of the species in this complex, which often renders their identification incomplete. The goal of this study was to develop molecular assays to identify Enterobacter hormaechei and Ent. cloacae genetic cluster III which are relatively frequently encountered in clinical material. The molecular assays developed in this study are qPCR technology based and served to identify both Ent. hormaechei and Ent. cloacae genetic cluster III. qPCR results were compared to hsp60 sequence analysis. Most clinical isolates were assigned to Ent. hormaechei subsp. steigerwaltii and Ent. cloacae genetic cluster III. The latter was proportionately more frequently isolated from bloodstream infections than from other material (P < 0·05). The qPCR assays detecting Ent. hormaechei and Ent. cloacae genetic cluster III demonstrated high sensitivity and specificity. The presented qPCR assays allow accurate and rapid identification of clinical isolates of the Ent. cloacae complex. The improved identifications obtained can specifically assist analysis of Ent. hormaechei and Ent. cloacae genetic cluster III in nosocomial outbreaks and can promote rapid environmental monitoring. An association was observed between Ent. cloacae cluster III and systemic infection that deserves further attention. © 2014 The Society for Applied Microbiology.

Towards the Ultimate Multi-Junction Solar Cell using Transfer Printing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lumb, Matthew P.; Meitl, Matt; Schmieder, Kenneth J.

2016-11-21

Transfer printing is a uniquely enabling technology for the heterogeneous integration of III-V materials grown on dissimilar substrates. In this paper, we present experimental results for a mechanically stacked tandem cell using GaAs and GaSb-based materials capable of harvesting the entire solar spectrum with 44.5% efficiency. We also present the latest results toward developing an ultra-high performance heterogeneous cell, integrating materials grown on GaAs, InP and GaSb platforms.

Material Science

NASA Image and Video Library

2002-08-06

Twila Schneider of Infinity Technology in Huntsville, AL, uses a small sand displacement box to explain the principles of the Mechanics of Granular Materials (MGM-III) experiment to two young Virginia students. The activity was part of the Space Research and You education event held by NASA's Office of Biological and Physical Research on June 25, 2002, in Arlington, VA, to highlight the research that will be conducted on STS-107.

Assessment of Technologies for the Space Shuttle External Tank Thermal Protection System and Recommendations for Technology Improvement - Part III: Material Property Characterization, Analysis, and Test Methods

NASA Technical Reports Server (NTRS)

Gates, Thomas S.; Johnson, Theodore F.; Whitley, Karen S.

2005-01-01

The objective of this report is to contribute to the independent assessment of the Space Shuttle External Tank Foam Material. This report specifically addresses material modeling, characterization testing, data reduction methods, and data pedigree. A brief description of the External Tank foam materials, locations, and standard failure modes is provided to develop suitable background information. A review of mechanics based analysis methods from the open literature is used to provide an assessment of the state-of-the-art in material modeling of closed cell foams. Further, this report assesses the existing material property database and investigates sources of material property variability. The report presents identified deficiencies in testing methods and procedures, recommendations for additional testing as required, identification of near-term improvements that should be pursued, and long-term capabilities or enhancements that should be developed.

Ferroelectric Thin Films III, Symposium Held in San Francisco, California on April 13 - 16, 1993. Materials Research Society Symposium Proceedings, Volume 310

DTIC Science & Technology

1993-04-16

and A. Ishitani AUTHOR INDEX 495 SUBJECT INDEX 499 *Invited Paper x Preface This symposium showcased the advancement in processing technology and...Layers of this thickness still are in advance of current fabrication technology , but do now appear to be within the bounds of possibility. Figure 6...Krusor of Xerox PARC for technical assistance. This work has been supported in part by the Department of Commerce Advanced Technology Program

Next-Generation MKIII Lightweight HUT/Hatch Assembly

NASA Technical Reports Server (NTRS)

McCarthy, Mike; Toscano, Ralph

2013-01-01

The MK III (H-1) carbon-graphite/ epoxy Hard Upper Torso (HUT)/Hatch assembly was designed, fabricated, and tested in the early 1990s. The spacesuit represented an 8.3 psi (˜58 kPa) technology demonstrator model of a zero prebreathe suit. The basic torso shell, brief, and hip areas of the suit were composed of a carbon-graphite/epoxy composite lay-up. In its current configuration, the suit weighs approximately 120 lb (˜54 kg). However, since future planetary suits will be designed to operate at 0.26 bar (˜26 kPa), it was felt that the suit's re-designed weight could be reduced to 79 lb (˜35 kg) with the incorporation of lightweight structural materials. Many robust, lightweight structures based on the technologies of advanced honeycomb materials, revolutionary new composite laminates, metal matrix composites, and recent breakthroughs in fullerene fillers and nanotechnology lend themselves well to applications requiring materials that are both light and strong. The major problem involves the reduction in weight of the HUT/ Hatch assembly for use in lunar and/or planetary applications, while at the same time maintaining a robust structural design. The technical objective is to research, design, and develop manufacturing methods that support fa b rica - tion of a lightweight HUT/Hatch assembly using advanced material and geometric redesign as necessary. Additionally, the lightweight HUT/Hatch assembly will interface directly with current MK III hardware. Using the new operating pressure and current MK III (H-1) interfaces as a starting block, it is planned to maximize HUT/Hatch assembly weight reduction through material selection and geometric redesign. A hard upper torso shell structure with rear-entry closure and corresponding hatch will be fabricated. The lightweight HUT/Hatch assembly will retrofit and interface with existing MK III (H-1) hardware elements, providing NASA with immediate "plug-andplay" capability. NASA crewmembers will have a lightweight, robust, life-support system that will minimize fatigue during extraterrestrial surface sojourns. Its unique feature is the utilization of a new and innovative family of materials used by the aerospace industry, which at the time of this reporting has not been used for the proposed application.

Optical and Electronic NO(x) Sensors for Applications in Mechatronics.

PubMed

Di Franco, Cinzia; Elia, Angela; Spagnolo, Vincenzo; Scamarcio, Gaetano; Lugarà, Pietro Mario; Ieva, Eliana; Cioffi, Nicola; Torsi, Luisa; Bruno, Giovanni; Losurdo, Maria; Garcia, Michael A; Wolter, Scott D; Brown, April; Ricco, Mario

2009-01-01

Current production and emerging NO(x) sensors based on optical and nanomaterials technologies are reviewed. In view of their potential applications in mechatronics, we compared the performance of: i) Quantum cascade lasers (QCL) based photoacoustic (PA) systems; ii) gold nanoparticles as catalytically active materials in field-effect transistor (FET) sensors, and iii) functionalized III-V semiconductor based devices. QCL-based PA sensors for NO(x) show a detection limit in the sub part-per-million range and are characterized by high selectivity and compact set-up. Electrochemically synthesized gold-nanoparticle FET sensors are able to monitor NO(x) in a concentration range from 50 to 200 parts per million and are suitable for miniaturization. Porphyrin-functionalized III-V semiconductor materials can be used for the fabrication of a reliable NO(x) sensor platform characterized by high conductivity, corrosion resistance, and strong surface state coupling.

A review into the use of ceramics in microbial fuel cells.

PubMed

Winfield, Jonathan; Gajda, Iwona; Greenman, John; Ieropoulos, Ioannis

2016-09-01

Microbial fuel cells (MFCs) offer great promise as a technology that can produce electricity whilst at the same time treat wastewater. Although significant progress has been made in recent years, the requirement for cheaper materials has prevented the technology from wider, out-of-the-lab, implementation. Recently, researchers have started using ceramics with encouraging results, suggesting that this inexpensive material might be the solution for propelling MFC technology towards real world applications. Studies have demonstrated that ceramics can provide stability, improve power and treatment efficiencies, create a better environment for the electro-active bacteria and contribute towards resource recovery. This review discusses progress to date using ceramics as (i) the structural material, (ii) the medium for ion exchange and (iii) the electrode for MFCs. Copyright © 2016 The Authors. Published by Elsevier Ltd.. All rights reserved.

Next decade in infrared detectors

NASA Astrophysics Data System (ADS)

Rogalski, A.

2017-10-01

Fundamental and technological issues associated with the development and exploitation of the most advanced infrared technologies is discussed. In these classes of detectors both photon and thermal detectors are considered. Special attention is directed to HgCdTe ternary alloys, type II superlattices (T2SLs), barrier detectors, quantum wells, extrinsic detectors, and uncooled thermal bolometers. The sophisticated physics associated with the antimonide-based bandgap engineering will give a new impact and interest in development of infrared detector structures. Important advantage of T2SLs is the high quality, high uniformity and stable nature of the material. In general, III-V semiconductors are more robust than their II-VI counterparts due to stronger, less ionic chemical bonding. As a result, III-V-based FPAs excel in operability, spatial uniformity, temporal stability, scalability, producibility, and affordability - the so-called "ibility" advantages. In well established uncooled imaging, microbolometer arrays are clearly the most used technology. The microbolometer detectors are now produced in larger volumes than all other IR array technologies together. Present state-of-the-art microbolometers are based on polycrystalline or amorphous materials, typically vanadium oxide (VOx) or amorphous silicon (a-Si), with only modest temperature sensitivity and noise properties. Basic efforts today are mainly focused on pixel reduction and performance enhancement.

Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Essig, Stephanie; Allebé, Christophe; Remo, Timothy

Today's dominant photovoltaic technologies rely on single-junction devices, which are approaching their practical efficiency limit of 25-27%. Therefore, researchers are increasingly turning to multi-junction devices, which consist of two or more stacked subcells, each absorbing a different part of the solar spectrum. Here, we show that dual-junction III-V//Sidevices with mechanically stacked, independently operated III-V and Si cells reach cumulative one-sun efficiencies up to 32.8%. Efficiencies up to 35.9% were achieved when combining a GaInP/GaAs dual-junction cell with a Si single-junction cell. These efficiencies exceed both the theoretical 29.4% efficiency limit of conventional Si technology and the efficiency of the recordmore » III-V dual-junction device (32.6%), highlighting the potential of Si-based multi-junction solar cells. However, techno-economic analysis reveals an order-of-magnitude disparity between the costs for III-V//Si tandem cells and conventional Si solar cells, which can be reduced if research advances in low-cost III-V growth techniques and new substrate materials are successful.« less

Materials Science and Device Physics of 2-Dimensional Semiconductors

NASA Astrophysics Data System (ADS)

Fang, Hui

Materials and device innovations are the keys to future technology revolution. For MOSFET scaling in particular, semiconductors with ultra-thin thickness on insulator platform is currently of great interest, due to the potential of integrating excellent channel materials with the industrially mature Si processing. Meanwhile, ultra-thin thickness also induces strong quantum confinement which in turn affect most of the material properties of these 2-dimensional (2-D) semiconductors, providing unprecedented opportunities for emerging technologies. In this thesis, multiple novel 2-D material systems are explored. Chapter one introduces the present challenges faced by MOSFET scaling. Chapter two covers the integration of ultrathin III V membranes with Si. Free standing ultrathin III-V is studied to enable high performance III-V on Si MOSFETs with strain engineering and alloying. Chapter three studies the light absorption in 2-D membranes. Experimental results and theoretical analysis reveal that light absorption in the 2-D quantum membranes is quantized into a fundamental physical constant, where we call it the quantum unit of light absorption, irrelevant of most of the material dependent parameters. Chapter four starts to focus on another 2-D system, atomic thin layered chalcogenides. Single and few layered chalcogenides are first explored as channel materials, with focuses in engineering the contacts for high performance MOSFETs. Contact treatment by molecular doping methods reveals that many layered chalcogenides other than MoS2 exhibit good transport properties at single layer limit. Finally, Chapter five investigated 2-D van der Waals heterostructures built from different single layer chalcogenides. The investigation in a WSe2/MoS2 hetero-bilayer shows a large Stokes like shift between photoluminescence peak and lowest absorption peak, as well as strong photoluminescence intensity, consistent with spatially indirect transition in a type II band alignment in this van der Waals heterostructure. This result enables new family of semiconductor heterostructures having tunable optoelectronic properties with customized composite layers and highlights the ability to build van der Waals semiconductor heterostructure lasers/LEDs.

Space Radiation Analysis for the Mark III Spacesuit

NASA Technical Reports Server (NTRS)

Atwell, Bill; Boeder, Paul; Ross, Amy

2013-01-01

NASA has continued the development of space systems by applying and integrating improved technologies that include safety issues, lightweight materials, and electronics. One such area is extravehicular (EVA) spacesuit development with the most recent Mark III spacesuit. In this paper the Mark III spacesuit is discussed in detail that includes the various components that comprise the spacesuit, materials and their chemical composition that make up the spacesuit, and a discussion of the 3-D CAD model of the Mark III spacesuit. In addition, the male (CAM) and female (CAF) computerized anatomical models are also discussed in detail. We combined the spacesuit and the human models, that is, we developed a method of incorporating the human models in the Mark III spacesuit and performed a ray-tracing technique to determine the space radiation shielding distributions for all of the critical body organs. These body organ shielding distributions include the BFO (Blood-Forming Organs), skin, eye, lungs, stomach, and colon, to name a few, for both the male and female. Using models of the trapped (Van Allen) proton and electron environments, radiation exposures were computed for a typical low earth orbit (LEO) EVA mission scenario including the geostationary (GEO) high electron environment. A radiation exposure assessment of these mission scenarios is made to determine whether or not the crew radiation exposure limits are satisfied, and if not, the additional shielding material that would be required to satisfy the crew limits.

Optimization Problem of Thermal Field on Surface of Revolving Susceptor in Vapor-Phase Epitaxy Reactor

NASA Astrophysics Data System (ADS)

Zhilenkov, A. A.; Chernyi, S. G.; Nyrkov, A. P.; Sokolov, S. S.

2017-10-01

Nitrides of group III elements are a very suitable basis for deriving light-emitting devices with the radiating modes lengths of 200-600 nm. The use of such semiconductors allows obtaining full-color RGB light sources, increasing record density of a digital data storage device, getting high-capacity and efficient sources of white light. Electronic properties of such semi-conductors allow using them as a basis for high-power and high-frequency transistors and other electronic devices, the specifications of which are competitive with those of SiC-based devices. Only since 2000, the technology of cultivation of crystals III-N of group has come to the level of wide recognition by both abstract science, and the industry that has led to the creation of the multi-billion dollar market. And this is despite a rather low level of development of the production technology of devices on the basis of III-N of materials. The progress that has happened in the last decade requires the solution of the main problem, constraining further development of this technology today - ensuring cultivation of III-N structures of necessary quality. For this purpose, it is necessary to solve problems of the analysis and optimization of processes in installations of epitaxial growth, and, as a result, optimization of its constructions.

Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications - SiC, GaN, Ga2O3, and Diamond.

PubMed

Wellmann, Peter J

2017-11-17

Power electronics belongs to the future key technologies in order to increase system efficiency as well as performance in automotive and energy saving applications. Silicon is the major material for electronic switches since decades. Advanced fabrication processes and sophisticated electronic device designs have optimized the silicon electronic device performance almost to their theoretical limit. Therefore, to increase the system performance, new materials that exhibit physical and chemical properties beyond silicon need to be explored. A number of wide bandgap semiconductors like silicon carbide, gallium nitride, gallium oxide, and diamond exhibit outstanding characteristics that may pave the way to new performance levels. The review will introduce these materials by (i) highlighting their properties, (ii) introducing the challenges in materials growth, and (iii) outlining limits that need innovation steps in materials processing to outperform current technologies.

Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga2O3, and Diamond

PubMed Central

2017-01-01

Power electronics belongs to the future key technologies in order to increase system efficiency as well as performance in automotive and energy saving applications. Silicon is the major material for electronic switches since decades. Advanced fabrication processes and sophisticated electronic device designs have optimized the silicon electronic device performance almost to their theoretical limit. Therefore, to increase the system performance, new materials that exhibit physical and chemical properties beyond silicon need to be explored. A number of wide bandgap semiconductors like silicon carbide, gallium nitride, gallium oxide, and diamond exhibit outstanding characteristics that may pave the way to new performance levels. The review will introduce these materials by (i) highlighting their properties, (ii) introducing the challenges in materials growth, and (iii) outlining limits that need innovation steps in materials processing to outperform current technologies. PMID:29200530

On-line determination of Sb(III) and total Sb using baker's yeast immobilized on polyurethane foam and hydride generation inductively coupled plasma optical emission spectrometry

NASA Astrophysics Data System (ADS)

Menegário, Amauri A.; Silva, Ariovaldo José; Pozzi, Eloísa; Durrant, Steven F.; Abreu, Cassio H.

2006-09-01

The yeast Saccharomyces cerevisiae was immobilized in cubes of polyurethane foam and the ability of this immobilized material to separate Sb(III) and Sb(V) was investigated. A method based on sequential determination of total Sb (after on-line reduction of Sb(V) to Sb(III) with thiourea) and Sb(III) (after on-line solid-liquid phase extraction) by hydride generation inductively coupled plasma optical emission spectrometry is proposed. A flow system assembled with solenoid valves was used to manage all stages of the process. The effects of pH, sample loading and elution flow rates on solid-liquid phase extraction of Sb(III) were evaluated. Also, the parameters related to on-line pre-reduction (reaction coil and flow rates) were optimized. Detection limits of 0.8 and 0.15 μg L - 1 were obtained for total Sb and Sb(III), respectively. The proposed method was applied to the analysis of river water and effluent samples. The results obtained for the determination of total Sb were in agreement with expected values, including the river water Standard Reference Material 1640 certified by the National Institute of Standards and Technology (NIST). Recoveries of Sb(III) and Sb(V) in spiked samples were between 81 ± 19 and 111 ±15% when 120 s of sample loading were used.

Heavy-section steel technology program. Semiannual progress report for period ending February 28, 1973

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

1974-02-01

The materials investigations under the HSST program are divided into studies of unirradiated materials and studies of irradiation effects. The studies of unirradiated materials, which include inspection, characterization, metallurgy, variability determinations, transition temperature investigations, fracture mechanics studies, and fatigue-crack propagation tests, are discussed. The investigations of irradiated materials include studies of radiation effects on A-533-B steel. Results of studies on thick pressure vessels and pipes of ASTM A508 steel are also reported along with results of studies on Mode III crack extension in reactor piping. (JRD)

Refinement of Foam Backfill Technology for Expedient Airfield Damage Repair- Phase I: Laboratory Evaluation of Foam Materials

DTIC Science & Technology

2016-11-01

the spring of 2016. Four of these materials were commercially available. The remaining formulations were designed specifically to support this... designated by other authorized documents. DESTROY THIS REPORT WHEN NO LONGER NEEDED. DO NOT RETURN IT TO THE ORIGINATOR. ERDC TR-16-16 iii...The Program Manager was Jeb S. Tingle, ERDC-GSL. This work was performed by the Airfields and Pavements Branch (GMA) of the Engineering Systems

Indium Zinc Oxide Mediated Wafer Bonding for III-V/Si Tandem Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tamboli, Adele C.; Essig, Stephanie; Horowitz, Kelsey A. W.

Silicon-based tandem solar cells are desirable as a high efficiency, economically viable approach to one sun or low concentration photovoltaics. We present an approach to wafer bonded III-V/Si solar cells using amorphous indium zinc oxide (IZO) as an interlayer. We investigate the impact of a heavily doped III-V contact layer on the electrical and optical properties of bonded test samples, including the predicted impact on tandem cell performance. We present economic modeling which indicates that the path to commercial viability for bonded cells includes developing low-cost III-V growth and reducing constraints on material smoothness. If these challenges can be surmounted,more » bonded tandems on Si can be cost-competitive with incumbent PV technologies, especially in low concentration, single axis tracking systems.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belinsky, S. A.; Hoover, M. D.; Bradley, P. L.

This document from the Inhalation Toxicology Research Institute includes annual reports in the following general areas: (I) Aerosol Technology and Characterization of Airborne Materials; (II) Deposition, transport, and clearance of inhaled Toxicants; (III) Metabolism and Markers of Inhaled Toxicants; (IV) Carcinogenic Responses to Toxicants; (V) Mechanisms of carcinogenic response to Toxicants; (VI) Non carcinogenic responses to inhaled toxicants; (VII) Mechanisms of noncarcinogenic Responses to Inhaled Toxicants; (VIII) The application of Mathematical Modeling to Risk Estimates. 9 appendices are also included. Selected papers are indexed separately for inclusion in the Energy Science and Technology Database.

Operation Joint Endeavor in Bosnia: telemedicine systems and case reports.

PubMed

Calcagni, D E; Clyburn, C A; Tomkins, G; Gilbert, G R; Cramer, T J; Lea, R K; Ehnes, S G; Zajtchuk, R

1996-01-01

For the last several years the U.S. Department of Defense (DoD) has operated a telemedicine test bed at the U.S. Army Medical Research and Material Command's Medical Advanced Technology Management Office. The goal of this test bed is to reengineer the military health service system from the most forward deployed forces to tertiary care teaching medical centers within the United States by exploiting emerging telemedicine technologies. The test bed has conducted numerous proof-of-concept telemedicine demonstrations as part of military exercises and in support of real-world troop deployments. The most ambitious of those demonstrations is Primetime III, an ongoing effort to provide telemedicine and other advanced technology support to medical units supporting Operation Joint Endeavor in Bosnia. Several of the first instances of the clinical use of the Primetime III systems are presented as case reports in this paper. These reports demonstrate capabilities and limitations of telemedicine. The Primetime III system demonstrates the technical ability to provide current telecommunications capabilities to medical units stationed in the remote, austere, difficult-to-serve environment of Bosnia. Telemedicine capabilities cannot be used without adequate training, operations, and sustainment support. Video consultations have eliminated the need for some evacuations. The system has successfully augmented the clinical capability of physicians assigned to these medical units. Fullest clinical utilization of telemedicine technologies requires adjustment of conventional clinical practice patterns.

Computer control of a scanning electron microscope for digital image processing of thermal-wave images

NASA Technical Reports Server (NTRS)

Gilbert, Percy; Jones, Robert E.; Kramarchuk, Ihor; Williams, Wallace D.; Pouch, John J.

1987-01-01

Using a recently developed technology called thermal-wave microscopy, NASA Lewis Research Center has developed a computer controlled submicron thermal-wave microscope for the purpose of investigating III-V compound semiconductor devices and materials. This paper describes the system's design and configuration and discusses the hardware and software capabilities. Knowledge of the Concurrent 3200 series computers is needed for a complete understanding of the material presented. However, concepts and procedures are of general interest.

24 CFR 3280.207 - Requirements for foam plastic thermal insulating materials.

Code of Federal Regulations, 2012 CFR

2012-04-01

... include intensity of cavity fire (temperature-time) and post-test damage. (iii) Post-test damage... Technology Research Institute (IIT) Report, “Development of Mobile Home Fire Test Methods to Judge the Fire... Project J-6461, 1979” or other full-scale fire tests accepted by HUD, and it is installed in a manner...

24 CFR 3280.207 - Requirements for foam plastic thermal insulating materials.

Code of Federal Regulations, 2011 CFR

2011-04-01

... include intensity of cavity fire (temperature-time) and post-test damage. (iii) Post-test damage... Technology Research Institute (IIT) Report, “Development of Mobile Home Fire Test Methods to Judge the Fire... Project J-6461, 1979” or other full-scale fire tests accepted by HUD, and it is installed in a manner...

24 CFR 3280.207 - Requirements for foam plastic thermal insulating materials.

Code of Federal Regulations, 2010 CFR

2010-04-01

... include intensity of cavity fire (temperature-time) and post-test damage. (iii) Post-test damage... Technology Research Institute (IIT) Report, “Development of Mobile Home Fire Test Methods to Judge the Fire... Project J-6461, 1979” or other full-scale fire tests accepted by HUD, and it is installed in a manner...

24 CFR 3280.207 - Requirements for foam plastic thermal insulating materials.

Code of Federal Regulations, 2014 CFR

2014-04-01

... include intensity of cavity fire (temperature-time) and post-test damage. (iii) Post-test damage... Technology Research Institute (IIT) Report, “Development of Mobile Home Fire Test Methods to Judge the Fire... Project J-6461, 1979” or other full-scale fire tests accepted by HUD, and it is installed in a manner...

24 CFR 3280.207 - Requirements for foam plastic thermal insulating materials.

Code of Federal Regulations, 2013 CFR

2013-04-01

... include intensity of cavity fire (temperature-time) and post-test damage. (iii) Post-test damage... Technology Research Institute (IIT) Report, “Development of Mobile Home Fire Test Methods to Judge the Fire... Project J-6461, 1979” or other full-scale fire tests accepted by HUD, and it is installed in a manner...

Fused Deposition Modeling 3D Printing for (Bio)analytical Device Fabrication: Procedures, Materials, and Applications

PubMed Central

2017-01-01

In this work, the use of fused deposition modeling (FDM) in a (bio)analytical/lab-on-a-chip research laboratory is described. First, the specifications of this 3D printing method that are important for the fabrication of (micro)devices were characterized for a benchtop FDM 3D printer. These include resolution, surface roughness, leakage, transparency, material deformation, and the possibilities for integration of other materials. Next, the autofluorescence, solvent compatibility, and biocompatibility of 12 representative FDM materials were tested and evaluated. Finally, we demonstrate the feasibility of FDM in a number of important applications. In particular, we consider the fabrication of fluidic channels, masters for polymer replication, and tools for the production of paper microfluidic devices. This work thus provides a guideline for (i) the use of FDM technology by addressing its possibilities and current limitations, (ii) material selection for FDM, based on solvent compatibility and biocompatibility, and (iii) application of FDM technology to (bio)analytical research by demonstrating a broad range of illustrative examples. PMID:28628294

Silicon photonics fiber-to-the-home transceiver array based on transfer-printing-based integration of III-V photodetectors.

PubMed

Zhang, Jing; De Groote, Andreas; Abbasi, Amin; Loi, Ruggero; O'Callaghan, James; Corbett, Brian; Trindade, António José; Bower, Christopher A; Roelkens, Gunther

2017-06-26

A 4-channel silicon photonics transceiver array for Point-to-Point (P2P) fiber-to-the-home (FTTH) optical networks at the central office (CO) side is demonstrated. A III-V O-band photodetector array was integrated onto the silicon photonic transmitter through transfer printing technology, showing a polarization-independent responsivity of 0.39 - 0.49 A/W in the O-band. The integrated PDs (30 × 40 μm 2 mesa) have a 3 dB bandwidth of 11.5 GHz at -3 V bias. Together with high-speed C-band silicon ring modulators whose bandwidth is up to 15 GHz, operation of the transceiver array at 10 Gbit/s is demonstrated. The use of transfer printing for the integration of the III-V photodetectors allows for an efficient use of III-V material and enables the scalable integration of III-V devices on silicon photonics wafers, thereby reducing their cost.

III International Conference on Laser and Plasma Researches and Technologies

NASA Astrophysics Data System (ADS)

2017-12-01

A.P. Kuznetsov and S.V. Genisaretskaya III Conference on Plasma and Laser Research and Technologies took place on January 24th until January 27th, 2017 at the National Research Nuclear University "MEPhI" (NRNU MEPhI). The Conference was organized by the Institute for Laser and Plasma Technologies and was supported by the Competitiveness Program of NRNU MEPhI. The conference program consisted of nine sections: • Laser physics and its application • Plasma physics and its application • Laser, plasma and radiation technologies in industry • Physics of extreme light fields • Controlled thermonuclear fusion • Modern problems of theoretical physics • Challenges in physics of solid state, functional materials and nanosystems • Particle accelerators and radiation technologies • Modern trends of quantum metrology. The conference is based on scientific fields as follows: • Laser, plasma and radiation technologies in industry, energetic, medicine; • Photonics, quantum metrology, optical information processing; • New functional materials, metamaterials, “smart” alloys and quantum systems; • Ultrahigh optical fields, high-power lasers, Mega Science facilities; • High-temperature plasma physics, environmentally-friendly energetic based on controlled thermonuclear fusion; • Spectroscopic synchrotron, neutron, laser research methods, quantum mechanical calculation and computer modelling of condensed media and nanostructures. More than 250 specialists took part in the Conference. They represented leading Russian scientific research centers and universities (National Research Centre "Kurchatov Institute", A.M. Prokhorov General Physics Institute, P.N. Lebedev Physical Institute, Troitsk Institute for Innovation and Fusion Research, Joint Institute for Nuclear Research, Moscow Institute of Physics and Tecnology and others) and leading scientific centers and universities from Germany, France, USA, Canada, Japan. We would like to thank heartily all of the speakers, participants, organizing and program committee members for their contribution to the conference.

Soft 2D nanoarchitectonics

NASA Astrophysics Data System (ADS)

Ariga, Katsuhiko; Watanabe, Shun; Mori, Taizo; Takeya, Jun

2018-04-01

Nanoarchitectonics is a new paradigm to combine and unify nanotechnology with other sciences and technologies, such as supramolecular chemistry, self-assembly, self-organization, materials technology for manipulation of the size of material objects, and even biotechnology for hybridization with bio-components. The nanoarchitectonic concept leads to the synergistic combination of various methodologies in materials production, including atomic/molecular-level control, self-organization, and field-controlled organization. The focus of this review is on soft 2D nanoarchitectonics. Scientific views on soft 2D nanomaterials are not fully established compared with those on rigid 2D materials. Here, we collect recent examples of 2D nanoarchitectonic constructions of functional materials and systems with soft components. These examples are selected according to the following three categories on the basis of 2D spatial density and motional freedom: (i) well-packed and oriented organic 2D materials with rational design of component molecules and device applications, (ii) well-defined assemblies with 2D porous structures as 2D network materials, and (iii) 2D control of molecular machines and receptors on the basis of certain motional freedom confined in two dimensions.

Very Broad [O III] λλ4959, 5007 Emission from the NGC 4472 Globular Cluster RZ 2109 and Implications for the Mass of Its Black Hole X-Ray Source

NASA Astrophysics Data System (ADS)

Zepf, Stephen E.; Stern, Daniel; Maccarone, Thomas J.; Kundu, Arunav; Kamionkowski, Marc; Rhode, Katherine L.; Salzer, John J.; Ciardullo, Robin; Gronwall, Caryl

2008-08-01

We present Keck LRIS spectroscopy of the black hole-hosting globular cluster RZ 2109 in the Virgo elliptical galaxy NGC 4472. We find that this object has extraordinarily broad [O III] λ5007 and [O III] λ4959 emission lines, with velocity widths of approximately 2000 km s-1. This result has significant implications for the nature of this accreting black hole system and the mass of the globular cluster black hole. We show that the broad [O III] λ5007 emission must arise from material driven at high velocity from the black hole system. This is because the volume available near the black hole is too small by many orders of magnitude to have enough [O III]-emitting atoms to account for the observed L([O III] λ5007) at high velocities, even if this volume is filled with oxygen at the critical density for [O III] λ5007. The Balmer emission is also weak, indicating the observed [O III] is not due to shocks. We therefore conclude that the [O III] λλ4959, 5007 is produced by photoionization of material driven across the cluster. The only known way to drive significant material at high velocity is for a system accreting mass near or above its Eddington limit, which indicates a stellar-mass black hole. Since it is dynamically implausible to form an accreting stellar-mass black hole system in a globular cluster with an intermediate-mass black hole (IMBH), it appears this massive globular cluster does not have an IMBH. We discuss further tests of this conclusion, and its implications for the MBH - Mstellar and MBH - σ relations. Based on observations made at the W. M. Keck Observatory, which is operated as a scientific partnership among the California Institute of Technology, the University of California, and the National Aeronautics and Space Administration. The Observatory was made possible by the generous financial support of the W. M. Keck Foundation.

GaN Based Electronics And Their Applications

NASA Astrophysics Data System (ADS)

Ren, Fan

2002-03-01

The Group III-nitrides were initially researched for their promise to fill the void for a blue solid state light emitter. Electronic devices from III-nitrides have been a more recent phenomenon. The thermal conductivity of GaN is three times that of GaAs. For high power or high temperature applications, good thermal conductivity is imperative for heat removal or sustained operation at elevated temperatures. The development of III-N and other wide bandgap technologies for high temperature applications will likely take place at the expense of competing technologies, such as silicon-on-insulator (SOI), at moderate temperatures. At higher temperatures (>300°C), novel devices and components will become possible. The automotive industry will likely be one of the largest markets for such high temperature electronics. One of the most noteworthy advantages for III-N materials over other wide bandgap semiconductors is the availability of AlGaN/GaN and InGaN/GaN heterostructures. A 2-dimensional electron gas (2DEG) has been shown to exist at the AlGaN/GaN interface, and heterostructure field effect transistors (HFETs) from these materials can exhibit 2DEG mobilities approaching 2000 cm2 / V?s at 300K. Power handling capabilities of 12 W/mm appear feasible, and extraordinary large signal performance has already been demonstrated, with a current state-of-the-art of >10W/mm at X-band. In this talk, high speed and high temperature AlGaN/GaN HEMTs as well as MOSHEMTs, high breakdown voltage GaN (>6KV) and AlGaN (9.7 KV) Schottky diodes, and their applications will be presented.

German national femtosecond technology project (FST)

NASA Astrophysics Data System (ADS)

Dausinger, Friedrich

2002-06-01

The German federal government started the funding of a national project intended to exploit the potential of femtosecond technology. In a forgoing competition five research consortia had been successful and have started now together with an adjoin research consortium their investigations in the following fields: (i) micro-machining of technical materials for microstructuring and drilling, (ii) medical therapy in: ophthalmology, dentistry, neurology and ear surgery, (iii) metrology, (iv) laser safety, (v) x- ray generation. Lasers, systems and technologies required in these potential fields of applications will be investigated. The program aims at industrial success and is dominated by industrial partners, therefore. The more fundamental research is done in university institutes and research centers.

Evaluating Nonproliferation Bona Fides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seward, Amy M.; Mathews, Caroline E.; Kessler, Carol E.

2008-07-14

Anticipated growth of global nuclear energy in a difficult international security environment heightens concerns that states could decide to exploit their civilian nuclear fuel cycles as a means of acquiring nuclear weapons. Such concerns partly reflect a fundamental tension in the Treaty on the Non-Proliferation of Nuclear Weapons (NPT). On the one hand, Articles II and III of the NPT clearly prohibit each non-nuclear-weapon state party from acquiring nuclear weapons. On the other hand, Article IV of the NPT confers the “inalienable right” of Parties to the treaty to “develop research, production and use of nuclear energy for peaceful purposes…,”more » and directs all Parties to “facilitate… the fullest possible exchange of equipment, materials and scientific and technological information for the peaceful uses of nuclear energy…,” and “cooperate in contributing…to the further development of the applications of nuclear energy for peaceful purposes….” This juxtaposition raises the possibility that a state could exercise its Article IV right to develop a civilian nuclear fuels cycle and then use the equipment, materials and technology to acquire nuclear weapons in violation of its Article II and III obligations.« less

Cecal intubation rates in different eras of endoscopic technological development

PubMed Central

Pasternak, Artur; Szura, Mirosław; Pędziwiatr, Michał; Major, Piotr; Rembiasz, Kazimierz

2018-01-01

Introduction Colonoscopy plays a critical role in colorectal cancer (CRC) screening and has been widely regarded as the gold standard. Cecal intubation rate (CIR) is one of the well-defined quality indicators used to assess colonoscopy. Aim To assess the impact of new technologies on the quality of colonoscopy by assessing completion rates. Material and methods This was a dual-center study at the 2nd Department of Surgery at Jagiellonian University Medical College and at the Specialist Center “Medicina” in Krakow, Poland. The CIR and cecal intubation time (CIT) in three different eras of technological advancement were determined. The study enrolled 27 463 patients who underwent colonoscopy as part of a national CRC screening program. The patients were divided into three groups: group I – 3408 patients examined between 2000 and 2003 (optical endoscopes); group II – 10 405 patients examined between 2004 and 2008 (standard electronic endoscopes); and group III – 13 650 patients examined between 2009 and 2014 (modern endoscopes). Results There were statistically significant differences in the CIR between successive eras. The CIR in group I (2000–2003) was 69.75%, in group II (2004–2008) was 92.32%, and in group III (2009–2014) was 95.17%. The mean CIT was significantly reduced in group III. Conclusions Our study shows that the technological innovation of novel endoscopy devices has a great influence on the effectiveness of the CRC screening program. The new era of endoscopic technological development has the potential to reduce examination-related patient discomfort, obviate the need for sedation and increase diagnostic yields. PMID:29643961

Silicon Integrated Optics: Fabrication and Characterization

NASA Astrophysics Data System (ADS)

Shearn, Michael Joseph, II

For decades, the microelectronics industry has sought integration and miniaturization as canonized in Moore's Law, and has continued doubling transistor density about every two years. However, further miniaturization of circuit elements is creating a bandwidth problem as chip interconnect wires shrink as well. A potential solution is the creation of an on-chip optical network with low delays that would be impossible to achieve using metal buses. However, this technology requires integrating optics with silicon microelectronics. The lack of efficient silicon optical sources has stymied efforts of an all-Si optical platform. Instead, the integration of efficient emitter materials, such as III-V semiconductors, with Si photonic structures is a low-cost, CMOS-compatible alternative platform. This thesis focuses on making and measuring on-chip photonic structures suitable for on-chip optical networking. The first part of the thesis assesses processing techniques of silicon and other semiconductor materials. Plasmas for etching and surface modification are described and used to make bonded, hybrid Si/III-V structures. Additionally, a novel masking method using gallium implantation into silicon for pattern definition is characterized. The second part of the thesis focuses on demonstrations of fabricated optical structures. A dense array of silicon devices is measured, consisting of fully-etched grating couplers, low-loss waveguides and ring resonators. Finally, recent progress in the Si/III-V hybrid system is discussed. Supermode control of devices is described, which uses changing Si waveguide width to control modal overlap with the gain material. Hybrid Si/III-V, Fabry-Perot evanescent lasers are demonstrated, utilizing a CMOS-compatible process suitable for integration on in electronics platforms. Future prospects and ultimate limits of Si devices and the hybrid Si/III-V system are also considered.

Photocatalytic Pre-Oxidation of Arsenic (III) in Groundwater by a Visible-Light-Driven System with Magnetic Separating Characteristic

NASA Astrophysics Data System (ADS)

Cui, Y.; Liu, Y.; Peng, L.; Qin, Y.

2017-12-01

Arsenic was a typical toxic metalloid element and its contamination in groundwater was widely recognized as a global health problem, especially in north China, where people depended on groundwater as water resource. Arsenic was existed as As(III) in underground water, and has low affinity to the surface of various minerals and more toxic and more difficultly to be removed compared with As(V), so a pre-oxidation technology by transforming As (III) to As (V) is highly desirable. Electrochemical and oxidizing agents were traditional technology, which usually causes secondary pollution. A novel methodology is presented here, using prepared magnetic visible-light-driven nanomaterials as recyclable media to investigate As(III) pre-oxidation processing. Ag@AgCl core-shell nanowires were first synthesized by oxidation of Ag nanowires with moderate FeCl3, and exhibited excellent photocatalytic activity to As(III) with visible-light. The ratio of chloridization was proved to act as key effect on photocatalytic oxidation efficiency. Testing with simulated groundwater condition proved that pH, ionic strength and concentration of humic acid have obvious effects on Ag@AgCl photocatalytic ability. h+ and ·O2- were confirmed to be the main active species during the visible-light driven photocatalytic oxidation process for As(III) by trapping experiments with radical scavengers. Then Fe0 was introduced to prepare Fe-Ag nanowire and chloridized into Fe-Ag@AgCl to provide magnetic characteristic. The magnetic recycling and re-chloride experiments validated this visible-light-driven material has excellent stable and high reused ability as photocatalyst under visible light irradiation.

A novel iron-lead redox flow battery for large-scale energy storage

NASA Astrophysics Data System (ADS)

Zeng, Y. K.; Zhao, T. S.; Zhou, X. L.; Wei, L.; Ren, Y. X.

2017-04-01

The redox flow battery (RFB) is one of the most promising large-scale energy storage technologies for the massive utilization of intermittent renewables especially wind and solar energy. This work presents a novel redox flow battery that utilizes inexpensive and abundant Fe(II)/Fe(III) and Pb/Pb(II) redox couples as redox materials. Experimental results show that both the Fe(II)/Fe(III) and Pb/Pb(II) redox couples have fast electrochemical kinetics in methanesulfonic acid, and that the coulombic efficiency and energy efficiency of the battery are, respectively, as high as 96.2% and 86.2% at 40 mA cm-2. Furthermore, the battery exhibits stable performance in terms of efficiencies and discharge capacities during the cycle test. The inexpensive redox materials, fast electrochemical kinetics and stable cycle performance make the present battery a promising candidate for large-scale energy storage applications.

Chemical Gas Sensors for Aeronautics and Space Applications III

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Neudeck, P. G.; Chen, L. Y.; Liu, C. C.; Wu, Q. H.; Sawayda, M. S.; Jin, Z.; Hammond, J.; Makel, D.; Liu, M.;

Recent advances in the science and technology for solid state lighting

NASA Astrophysics Data System (ADS)

Munkholm, Anneli

2003-03-01

Recent development of high power light emitting diodes (LEDs) has enabled fabrication of solid state devices with efficiencies that surpass that of incandescent light, as well as providing a total light output significantly exceeding that of conventional indicator LEDs. This breakthrough in high flux is opening up new applications for use of high power LEDs, such as liquid crystal display backlighting and automotive headlights. Some of the key elements to this technological breakthrough are the flip-chip device design, power packaging and phosphor coating technology, which will be discussed. In addition to device design improvements, our fundamental knowledge of the III-nitride material system is improving and has resulted in higher internal quantum efficiencies. Strain plays a significant role in complex AlInGaN heterostructures used in current devices. Using a multi-beam optical strain sensor (MOSS) system to measure the wafer curvature in situ, we have characterized the strain during metal-organic chemical vapor deposition of III-nitrides. Strain measurements of InGaN, AlGaN and Si-doped GaN films on GaN will be presented.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

This symposium included five sessions. Session I dealt with the technology for contending with harmful effluents primarily from coal conversion processes. Session II was designed to address the need for the systematic application of existing capabilities to the collection and characterization of materials of importance to the life scientists. Session III had the underlying theme of the health effects research - biologists, chemists, and technologists working together to confront the problems of the emerging industries. Session IV provided the most recent data in the areas of atmospheric, solid, and liquid releases. Session V dealt with effects on humans and onmore » those people who may potentially be affected by the toxic material that they produce. In summary, the sessions were: technology, chemical, characterization, biological effects, environmental and ecological effects and occupational health effects. 29 pages were included.« less

Enhanced thermaly managed packaging for III-nitride light emitters

NASA Astrophysics Data System (ADS)

Kudsieh, Nicolas

In this Dissertation our work on `enhanced thermally managed packaging of high power semiconductor light sources for solid state lighting (SSL)' is presented. The motivation of this research and development is to design thermally high stable cost-efficient packaging of single and multi-chip arrays of III-nitrides wide bandgap semiconductor light sources through mathematical modeling and simulations. Major issues linked with this technology are device overheating which causes serious degradation in their illumination intensity and decrease in the lifetime. In the introduction the basics of III-nitrides WBG semiconductor light emitters are presented along with necessary thermal management of high power cingulated and multi-chip LEDs and laser diodes. This work starts at chip level followed by its extension to fully packaged lighting modules and devices. Different III-nitride structures of multi-quantum well InGaN/GaN and AlGaN/GaN based LEDs and LDs were analyzed using advanced modeling and simulation for different packaging designs and high thermal conductivity materials. Study started with basic surface mounted devices using conventional packaging strategies and was concluded with the latest thermal management of chip-on-plate (COP) method. Newly discovered high thermal conductivity materials have also been incorporated for this work. Our study also presents the new approach of 2D heat spreaders using such materials for SSL and micro LED array packaging. Most of the work has been presented in international conferences proceedings and peer review journals. Some of the latest work has also been submitted to well reputed international journals which are currently been reviewed for publication. .

On Structure and Properties of Amorphous Materials

PubMed Central

Stachurski, Zbigniew H.

2011-01-01

Mechanical, optical, magnetic and electronic properties of amorphous materials hold great promise towards current and emergent technologies. We distinguish at least four categories of amorphous (glassy) materials: (i) metallic; (ii) thin films; (iii) organic and inorganic thermoplastics; and (iv) amorphous permanent networks. Some fundamental questions about the atomic arrangements remain unresolved. This paper focuses on the models of atomic arrangements in amorphous materials. The earliest ideas of Bernal on the structure of liquids were followed by experiments and computer models for the packing of spheres. Modern approach is to carry out computer simulations with prediction that can be tested by experiments. A geometrical concept of an ideal amorphous solid is presented as a novel contribution to the understanding of atomic arrangements in amorphous solids. PMID:28824158

Catalytic Wastewater Treatment Using Pillared Clays

NASA Astrophysics Data System (ADS)

Perathoner, Siglinda; Centi, Gabriele

After introduction on the use of solid catalysts in wastewater treatment technologies, particularly advanced oxidation processes (AOPs), this review discussed the use of pillared clay (PILC) materials in three applications: (i) wet air catalytic oxidation (WACO), (ii) wet hydrogen peroxide catalytic oxidation (WHPCO) on Cu-PILC and Fe-PILC, and (iii) behavior of Ti-PILC and Fe-PILC in the photocatalytic or photo-Fenton conversion of pollutants. Literature data are critically analyzed to evidence the main direction to further investigate, in particularly with reference to the possible practical application of these technologies to treat industrial, municipal, or agro-food production wastewater.

Developing Novel Protein-based Materials using Ultrabithorax: Production, Characterization, and Functionalization

NASA Astrophysics Data System (ADS)

Huang, Zhao

2011-12-01

Compared to 'conventional' materials made from metal, glass, or ceramics, protein-based materials have unique mechanical properties. Furthermore, the morphology, mechanical properties, and functionality of protein-based materials may be optimized via sequence engineering for use in a variety of applications, including textile materials, biosensors, and tissue engineering scaffolds. The development of recombinant DNA technology has enabled the production and engineering of protein-based materials ex vivo. However, harsh production conditions can compromise the mechanical properties of protein-based materials and diminish their ability to incorporate functional proteins. Developing a new generation of protein-based materials is crucial to (i) improve materials assembly conditions, (ii) create novel mechanical properties, and (iii) expand the capacity to carry functional protein/peptide sequences. This thesis describes development of novel protein-based materials using Ultrabithorax, a member of the Hox family of proteins that regulate developmental pathways in Drosophila melanogaster. The experiments presented (i) establish the conditions required for the assembly of Ubx-based materials, (ii) generate a wide range of Ubx morphologies, (iii) examine the mechanical properties of Ubx fibers, (iv) incorporate protein functions to Ubx-based materials via gene fusion, (v) pattern protein functions within the Ubx materials, and (vi) examine the biocompatibility of Ubx materials in vitro. Ubx-based materials assemble at mild conditions compatible with protein folding and activity, which enables Ubx chimeric materials to retain the function of appended proteins in spatial patterns determined by materials assembly. Ubx-based materials also display mechanical properties comparable to existing protein-based materials and demonstrate good biocompatibility with living cells in vitro. Taken together, this research demonstrates the unique features and future potential of novel Ubx-based materials.

Inorganic Photovoltaics Materials and Devices: Past, Present, and Future

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Bailey, Sheila G.; Rafaelle, Ryne P.

2005-01-01

This report describes recent aspects of advanced inorganic materials for photovoltaics or solar cell applications. Specific materials examined will be high-efficiency silicon, gallium arsenide and related materials, and thin-film materials, particularly amorphous silicon and (polycrystalline) copper indium selenide. Some of the advanced concepts discussed include multi-junction III-V (and thin-film) devices, utilization of nanotechnology, specifically quantum dots, low-temperature chemical processing, polymer substrates for lightweight and low-cost solar arrays, concentrator cells, and integrated power devices. While many of these technologies will eventually be used for utility and consumer applications, their genesis can be traced back to challenging problems related to power generation for aerospace and defense. Because this overview of inorganic materials is included in a monogram focused on organic photovoltaics, fundamental issues and metrics common to all solar cell devices (and arrays) will be addressed.

A review on III-V core-multishell nanowires: growth, properties, and applications

NASA Astrophysics Data System (ADS)

Royo, Miquel; De Luca, Marta; Rurali, Riccardo; Zardo, Ilaria

2017-04-01

This review focuses on the emerging field of core-multishell (CMS) semiconductor nanowires (NWs). In these kinds of wires, a NW grown vertically on a substrate acts as a template for the coaxial growth of two or more layers wrapped around it. Thanks to the peculiar geometry, the strain is partially released along the radial direction, thus allowing the creation of fascinating heterostructures, even based on lattice mismatched materials that would hardly grow in a planar geometry. Enabling the unique bridging of the 1D nature of NWs with the exciting properties of 2D heterostructures, these novel systems are becoming attractive for material science, as well as fundamental and applied physics. We will focus on NWs made of III-V and III-V-based alloys as they represent a model system in which present growth techniques have reached a high degree of control on the material structural properties, and many physical properties have been assessed, from both the theoretical and experimental points of view. In particular, we provide an overview on the growth methods and structural properties of CMS NWs, on the modulation doping mechanisms enabled by these heterostructures, on the effects of a magnetic field, and on the phononic and optical properties typical of CMS NWs. Moreover, we review the main technological applications based on these systems, such as optoelectronic and photovoltaic devices.

Seal Technology in Gas Turbine Engines

DTIC Science & Technology

1978-08-01

ambient temperatures and 427*C (800*F). 3. Application as a part of the normal manufacturing sequence without subsequent finishing operations...of demonstrable hardnless with sharp, cutting edges. 4. The coating must be applied to a finish dimmsion without subsequent processing. 5. Application...The JC1-Iii 3.4 coating had a surface finish of 11 V metre (425 mioroinches). Both materials appeared to be adequately rough for the proposed

Child Interacts with a Shear Strength Demonstrator

NASA Technical Reports Server (NTRS)

2002-01-01

Twila Schneider of Infinity Technology in Huntsville, AL, uses a small sand displacement box to explain the principles of the Mechanics of Granular Materials (MGM-III) experiment to two young Virginia students. The activity was part of the Space Research and You education event held by NASA's Office of Biological and Physical Research on June 25, 2002, in Arlington, VA, to highlight the research that will be conducted on STS-107.

High Strength Steel Weldment Reliability: Weld Metal Hydrogen Trapping.

DTIC Science & Technology

1998-02-01

Reliability : Weld Metal Hydrogen Trapping submitted to : United States Army Research Office Materials Science Division P.O. Box 12211 Research Triangle...Conf. Proc. of Welding and Related Technologies for the XXIth Century, November 1998, Kiev, Ukraine : "Hydrogen Assisted Cracking in...appendices (see appendix IV). Next TTCP workshop will be held from 6th to 8th October 1998, at CANMET , Ottawa, Ontario, Canada. 20 III. Figures 18

Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications

NASA Technical Reports Server (NTRS)

Connolly, Denis J.; Bhasin, Kul B.; Romanofsky, Robert R.

1987-01-01

Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.

Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications

NASA Technical Reports Server (NTRS)

Connolly, Denis J.; Bhasin, Kul B.; Romanofsky, Robert R.

1987-01-01

Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMICs to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMICs is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.

Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications

DOEpatents

Hui, Rongqing [Lenexa, KS; Jiang, Hong-Xing [Manhattan, KS; Lin, Jing-Yu [Manhattan, KS

2008-03-18

The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.

Crystal structure of laser-induced subsurface modifications in Si

NASA Astrophysics Data System (ADS)

Verburg, P. C.; Smillie, L. A.; Römer, G. R. B. E.; Haberl, B.; Bradby, J. E.; Williams, J. S.; Huis in't Veld, A. J.

2015-08-01

Laser-induced subsurface modification of dielectric materials is a well-known technology. Applications include the production of optical components and selective etching. In addition to dielectric materials, the subsurface modification technology can be applied to silicon, by employing near to mid-infrared radiation. An application of subsurface modifications in silicon is laser-induced subsurface separation, which is a method to separate wafers into individual dies. Other applications for which proofs of concept exist are the formation of waveguides and resistivity tuning. However, limited knowledge is available about the crystal structure of subsurface modifications in silicon. In this work, we investigate the geometry and crystal structure of laser-induced subsurface modifications in monocrystalline silicon wafers. In addition to the generation of lattice defects, we found that transformations to amorphous silicon and Si -iii/Si -xii occur as a result of the laser irradiation.

Emerging technologies for high performance infrared detectors

NASA Astrophysics Data System (ADS)

Tan, Chee Leong; Mohseni, Hooman

2018-01-01

Infrared photodetectors (IRPDs) have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III-V material-based photodetectors have been dominating the industry. However, in the last few decades, significant funding and research has been focused to improve the performance of IRPDs such as lowering the fabrication cost, simplifying the fabrication processes, increasing the production yield, and increasing the operating temperature by making use of advances in nanofabrication and nanotechnology. We will first review the nanomaterial with suitable electronic and mechanical properties, such as two-dimensional material, graphene, transition metal dichalcogenides, and metal oxides. We compare these with more traditional low-dimensional material such as quantum well, quantum dot, quantum dot in well, semiconductor superlattice, nanowires, nanotube, and colloid quantum dot. We will also review the nanostructures used for enhanced light-matter interaction to boost the IRPD sensitivity. These include nanostructured antireflection coatings, optical antennas, plasmonic, and metamaterials.

LWIR HgCdTe: Innovative detectors in an incumbent technology

NASA Technical Reports Server (NTRS)

Tennant, William E.

1990-01-01

HgCdTe is the current material of choice for high performance imagers operating at relatively high temperatures. Its lack of technological maturity compared with silicon and wide-band gap III-V compounds is more than offset by its outstanding IR sensitivity and by the relatively benign effect of its materials defects. This latter property has allowed non-equilibrium growth techniques, metal oxide chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), to produce device quality long wavelength infrared (LWIR) HgCdTe even on common substrates like GaAs and GaAs/Si. Detector performance in these exotic materials structures is comparable in many ways with devices in equilibrium-grown material. Lifetimes are similar. RoA values at 77K as high as several hundred have been seen in HgCdTe/GaAs/Si with 9.5 micron cut-off wavelength. HgCdTe/GaAs layers with approx. 15 micron cut-off wavelengths have given average 77K RoAs of greater than 2. Hybrid focal plane arrays have been evaluated with excellent operability.

How cutting-edge technologies impact the design of electrochemical (bio)sensors for environmental analysis. A review.

PubMed

Arduini, Fabiana; Cinti, Stefano; Scognamiglio, Viviana; Moscone, Danila; Palleschi, Giuseppe

2017-03-22

Through the years, scientists have developed cutting-edge technologies to make (bio)sensors more convenient for environmental analytical purposes. Technological advancements in the fields of material science, rational design, microfluidics, and sensor printing, have radically shaped biosensor technology, which is even more evident in the continuous development of sensing systems for the monitoring of hazardous chemicals. These efforts will be crucial in solving some of the problems constraining biosensors to reach real environmental applications, such as continuous analyses in field by means of multi-analyte portable devices. This review (with 203 refs.) covers the progress between 2010 and 2015 in the field of technologies enabling biosensor applications in environmental analysis, including i) printing technology, ii) nanomaterial technology, iii) nanomotors, iv) biomimetic design, and (v) microfluidics. Next section describes futuristic cutting-edge technologies that are gaining momentum in recent years, which furnish highly innovative aspects to biosensing devices. Copyright © 2016 Elsevier B.V. All rights reserved.

Low-Cost III-V Photovoltaic Materials by Chloride Vapor Transport Deposition Using Safe Solid Precursors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boettcher, Shannon; Aloni, Shaul; Weiss, Robert

Si-based photovoltaic devices dominate the market. As photovoltaic (PV) manufacturing costs have plummeted, technologies which increase efficiency have become critical. Si cell efficiencies are nearing theoretical limits and Si-based PV modules are unlikely to reach the 25-30% efficiency range. The use of III-V semiconductors is an obvious technical solution to improve efficiency, especially if they can be integrated directly with existing Si technology as tandems. High coefficients of light absorption along with tunable bandgaps and lattice constants have resulted in record conversion efficiencies for both one-sun and concentrator PV applications. GaAs, for example, has been used to manufacture single-junction photovoltaicsmore » with world-record efficiencies of 28.8% at one sun.2 However, costs for III-Vs must be dramatically reduced to produce cost-effective, high-efficiency PV solutions. III-V costs are controlled by two factors: semiconductor growth and the substrate. III-V growth is dominated today by metal-organic vapor phase epitaxy (MOVPE) with a lesser role played by molecular beam epitaxy (MBE). MOVPE costs are high due to the expense and low utilization (~30%) of precursors, modest growth rates (~100 nm min-1), equipment complexity, and safety infrastructure needed to handle toxic, pyrophoric gases.3 MBE costs are high due to slow growth rates and limitations of scalability. Details comparing plausible low-cost III-V growth methods are available in a review article published as a result of this project. The primary goal of this project was to demonstrate that close-spaced vapor transport (CSVT) using chloride (from HCl) as a transport agent can be used for the rapid growth of device-ready III-V layers from safe, solid-source precursors. In pursuit of this goal, we designed, built, and installed a new Cl-CSVT reactor based on insights from our previous H2O-CSVT growth system and in collaboration with equipment professionals at Malachite Technologies. This system was successfully used to grow epitaxial GaAs with controlled n-type doping, having mobilities similar to MOVPE. Detailed technical information and results can also be found in the primary publication resulting from this project. This work sets the stage for tackling the development of high-performance III-V single junctions and tandem devices directly on Si substrates, which was beyond the capabilities of our H2O-CSVT system. The design of the reactor’s source and substrate transfer system should allow for direct deposition of device structures. The collective innovations of our Cl-CSVT system might ultimately serve as an enabling process for commercialization of the technology through a collaboration with appropriate industrial partners.« less

East Europe Report: Political, Sociological and Military Affairs, No. 2229

DTIC Science & Technology

1983-11-10

possible in the RDC III, using all develop- ment partners, to fully meet the internationally standardized very hard re- quirements regarding mechanical...complicated fashion . The difference between these time marks is proportional to the useful signal voltage and hence to the dose. This time difference is...decontamination) it is possible at least in the end phase to carry out this training optimally only while using technologies and radioactive materi- als

Spatial light modulators and applications III; Proceedings of the Meeting, San Diego, CA, Aug. 7, 8, 1989

NASA Astrophysics Data System (ADS)

Efron, Uzi

Recent advances in the technology and applications of spatial light modulators (SLMs) are discussed in review essays by leading experts. Topics addressed include materials for SLMs, SLM devices and device technology, applications to optical data processing, and applications to artificial neural networks. Particular attention is given to nonlinear optical polymers, liquid crystals, magnetooptic SLMs, multiple-quantum-well SLMs, deformable-mirror SLMs, three-dimensional optical memories, applications of photorefractive devices to optical computing, photonic neurocomputers and learning machines, holographic associative memories, SLMs as parallel memories for optoelectronic neural networks, and coherent-optics implementations of neural-network models.

Lighting market alchemy: Will we find a pot of gold at the end of the III-V rainbow?

NASA Astrophysics Data System (ADS)

Conway, Kathryn M.

2004-12-01

With a focus on visible spectrum light emitting diodes (LEDs), three questions frame this update. First, what are the market and financial outlooks for light-producing compound semiconductor materials and devices? Second, which applications offer the greatest growth potential for the next five to ten years and with which technologies will they likely compete for market share? Third, how can photonics experts contribute to accelerated successes for LEDs and other solid-state lighting technologies such as quantum dots? Using the rainbow as a metaphor for the market, the author examines developments in single color, multiple color and "white light" products.

Spatial light modulators and applications III; Proceedings of the Meeting, San Diego, CA, Aug. 7, 8, 1989

NASA Technical Reports Server (NTRS)

Efron, Uzi (Editor)

1990-01-01

Recent advances in the technology and applications of spatial light modulators (SLMs) are discussed in review essays by leading experts. Topics addressed include materials for SLMs, SLM devices and device technology, applications to optical data processing, and applications to artificial neural networks. Particular attention is given to nonlinear optical polymers, liquid crystals, magnetooptic SLMs, multiple-quantum-well SLMs, deformable-mirror SLMs, three-dimensional optical memories, applications of photorefractive devices to optical computing, photonic neurocomputers and learning machines, holographic associative memories, SLMs as parallel memories for optoelectronic neural networks, and coherent-optics implementations of neural-network models.

On-chip single photon filtering and multiplexing in hybrid quantum photonic circuits.

PubMed

Elshaari, Ali W; Zadeh, Iman Esmaeil; Fognini, Andreas; Reimer, Michael E; Dalacu, Dan; Poole, Philip J; Zwiller, Val; Jöns, Klaus D

2017-08-30

Quantum light plays a pivotal role in modern science and future photonic applications. Since the advent of integrated quantum nanophotonics different material platforms based on III-V nanostructures-, colour centers-, and nonlinear waveguides as on-chip light sources have been investigated. Each platform has unique advantages and limitations; however, all implementations face major challenges with filtering of individual quantum states, scalable integration, deterministic multiplexing of selected quantum emitters, and on-chip excitation suppression. Here we overcome all of these challenges with a hybrid and scalable approach, where single III-V quantum emitters are positioned and deterministically integrated in a complementary metal-oxide-semiconductor-compatible photonic circuit. We demonstrate reconfigurable on-chip single-photon filtering and wavelength division multiplexing with a foot print one million times smaller than similar table-top approaches, while offering excitation suppression of more than 95 dB and efficient routing of single photons over a bandwidth of 40 nm. Our work marks an important step to harvest quantum optical technologies' full potential.Combining different integration platforms on the same chip is currently one of the main challenges for quantum technologies. Here, Elshaari et al. show III-V Quantum Dots embedded in nanowires operating in a CMOS compatible circuit, with controlled on-chip filtering and tunable routing.

Novel materials for high-efficiency solar cells

NASA Astrophysics Data System (ADS)

Kojima, Nobuaki; Natori, Masato; Suzuki, Hidetoshi; Inagaki, Makoto; Ohshita, Yoshio; Yamaguchi, Masafumi

2009-08-01

Our Toyota Technological Institute group has investigated various novel materials for solar cells from organic to III-V compound materials. In this paper, we report our recent results in conductivity control of C60 thin films by metal-doping for organic solar cells, and mobility improvement of (In)GaAsN compounds for III-V tandem solar cells. The epitaxial growth of Mg-doped C60 films was attempted. It was found that the epitaxial growth of Mg-doped C60 film was enabled by using mica (001) substrate in the low Mg concentration region (Mg/C60 molar ratio < 1). The crystal quality of the epitaxial Mg-doped C60 film was improved drastically in compared with micro-crystalline film on glass substrate. Such drastic improvement of crystal quality in the epitaxial films resulted significant increase in conductivity. This result may indicate the significant increase of carrier mobility. Crystal quality improvement of CBE-grown GaAsN materials was investigated. We achieved the reduction of residual impurity concentration by chemical reaction control on the growing surface by modifying flow sequence of precursors and by increasing step density on the surface by using a vicinal GaAs substrate. Furthermore, the improvement in carrier mobility was observed, and it was suggested that the reduction of both residual impurities and N-related defects leads this improvement.

Applications of aerospace technology in biology and medicine

NASA Technical Reports Server (NTRS)

Rouse, D. J.

1983-01-01

Utilization of NASA technology and its application to medicine is discussed. The introduction of new or improved commercially available medical products and incorporation of aerospace technology is outlined. A biopolar donor-recipient model of medical technology transfer is presented to provide a basis for the methodology. The methodology is designed to: (1) identify medical problems and NASA technology that, in combination, constitute opportunities for successful medical products; (2) obtain the early participation of industry in the transfer process; and (3) obtain acceptance by the medical community of new medical products based on NASA technology. Two commercial transfers were completed: the ocular screening device, a system for quick detection of vision problems in preschool children, and Porta-Fib III, a hospital monitoring unit. Two institutional transfers were completed: implant materials testing, the application of NASA fracture control technology to improve reliability of metallic prostheses, and incinerator monitoring, a quadrupole mass spectrometer to monitor combustion products of municipal incinerators. Mobility aids for the blind and ultrasound diagnosis of burn depth are also studied.

III-V arsenide-nitride semiconductor

NASA Technical Reports Server (NTRS)

Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

2000-01-01

III-V arsenide-nitride semiconductor are disclosed. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V materials varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V material can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

Methods for forming group III-arsenide-nitride semiconductor materials

NASA Technical Reports Server (NTRS)

Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

2002-01-01

Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

Methods for forming group III-V arsenide-nitride semiconductor materials

NASA Technical Reports Server (NTRS)

Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

2000-01-01

Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

Risk, mobility or population size? Drivers of technological richness among contact-period western North American hunter-gatherers.

PubMed

Collard, Mark; Buchanan, Briggs; O'Brien, Michael J; Scholnick, Jonathan

2013-11-19

Identifying factors that influence technological evolution in small-scale societies is important for understanding human evolution. There have been a number of attempts to identify factors that influence the evolution of food-getting technology, but little work has examined the factors that affect the evolution of other technologies. Here, we focus on variation in technological richness (total number of material items and techniques) among recent hunter-gatherers from western North America and test three hypotheses: (i) technological richness is affected by environmental risk, (ii) population size is the primary determinant of technological richness, and (iii) technological richness is constrained by residential mobility. We found technological richness to be correlated with a proxy for environmental risk-mean rainfall for the driest month-in the manner predicted by the risk hypothesis. Support for the hypothesis persisted when we controlled for shared history and intergroup contact. We found no evidence that technological richness is affected by population size or residential mobility. These results have important implications for unravelling the complexities of technological evolution.

Risk, mobility or population size? Drivers of technological richness among contact-period western North American hunter–gatherers

PubMed Central

Collard, Mark; Buchanan, Briggs; O'Brien, Michael J.; Scholnick, Jonathan

2013-01-01

Identifying factors that influence technological evolution in small-scale societies is important for understanding human evolution. There have been a number of attempts to identify factors that influence the evolution of food-getting technology, but little work has examined the factors that affect the evolution of other technologies. Here, we focus on variation in technological richness (total number of material items and techniques) among recent hunter–gatherers from western North America and test three hypotheses: (i) technological richness is affected by environmental risk, (ii) population size is the primary determinant of technological richness, and (iii) technological richness is constrained by residential mobility. We found technological richness to be correlated with a proxy for environmental risk—mean rainfall for the driest month—in the manner predicted by the risk hypothesis. Support for the hypothesis persisted when we controlled for shared history and intergroup contact. We found no evidence that technological richness is affected by population size or residential mobility. These results have important implications for unravelling the complexities of technological evolution. PMID:24101622

A multi-criteria ranking of different technologies for the anaerobic digestion for energy recovery of the organic fraction of municipal solid wastes.

PubMed

Karagiannidis, A; Perkoulidis, G

2009-04-01

This paper describes a conceptual framework and methodological tool developed for the evaluation of different anaerobic digestion technologies suitable for treating the organic fraction of municipal solid waste, by introducing the multi-criteria decision support method Electre III and demonstrating its related applicability via a test application. Several anaerobic digestion technologies have been proposed over the last years; when compared to biogas recovery from landfills, their advantage is the stability in biogas production and the stabilization of waste prior to final disposal. Anaerobic digestion technologies also show great adaptability to a broad spectrum of different input material beside the organic fraction of municipal solid waste (e.g. agricultural and animal wastes, sewage sludge) and can also be used in remote and isolated communities, either stand-alone or in conjunction to other renewable energy sources. Main driver for this work was the preliminary screening of such methods for potential application in Hellenic islands in the municipal solid waste management sector. Anaerobic digestion technologies follow different approaches to the anaerobic digestion process and also can include production of compost. In the presented multi-criteria analysis exercise, Electre III is implemented for comparing and ranking 5 selected alternative anaerobic digestion technologies. The results of a performed sensitivity analysis are then discussed. In conclusion, the performed multi-criteria approach was found to be a practical and feasible method for the integrated assessment and ranking of anaerobic digestion technologies by also considering different viewpoints and other uncertainties of the decision-making process.

Optics Communications: Special issue on Polymer Photonics and Its Applications

NASA Astrophysics Data System (ADS)

Zhang, Ziyang; Pitwon, Richard C. A.; Feng, Jing

2016-03-01

In the last decade polymer photonics has witnessed a tremendous boost in research efforts and practical applications. Polymer materials can be engineered to exhibit unique optical and electrical properties. Extremely transparent and reliable passive optical polymers have been made commercially available and paved the ground for the development of various waveguide components. Advancement in the research activities regarding the synthesis of active polymers has enabled devices such as ultra-fast electro-optic modulators, efficient white light emitting diodes, broadband solar cells, flexible displays, and so on. The fabrication technology is not only fast and cost-effective, but also provides flexibility and broad compatibility with other semiconductor processing technologies. Reports show that polymers have been integrated in photonic platforms such as silicon-on-insulator (SOI), III-V semiconductors, and silica PLCs, and vice versa, photonic components made from a multitude of materials have been integrated, in a heterogeneous/hybrid manner, in polymer photonic platforms.

Crystal structure of laser-induced subsurface modifications in Si

DOE Office of Scientific and Technical Information (OSTI.GOV)

Verburg, P. C.; Smillie, L. A.; Römer, G. R. B. E.

2015-06-04

Laser-induced subsurface modification of dielectric materials is a well-known technology. Applications include the production of optical components and selective etching. In addition to dielectric materials, the subsurface modification technology can be applied to silicon, by employing near to mid-infrared radiation. An application of subsurface modifications in silicon is laser-induced subsurface separation, which is a method to separate wafers into individual dies. Other applications for which proofs of concept exist are the formation of waveguides and resistivity tuning. However, limited knowledge is available about the crystal structure of subsurface modifications in silicon. In this paper, we investigate the geometry and crystalmore » structure of laser-induced subsurface modifications in monocrystalline silicon wafers. Finally, in addition to the generation of lattice defects, we found that transformations to amorphous silicon and Si-iii/Si-xii occur as a result of the laser irradiation.« less

Collaborative designing and job satisfaction of airplane manufacturing engineers: A case study

NASA Astrophysics Data System (ADS)

Johnson, Michael David, Sr.

The group III-nitride system of materials has had considerable commercial success in recent years in the solid state lighting (SSL) and power electronics markets. The need for high efficient general lighting applications has driven research into InGaN based blue light emitting diodes (LEDs), and demand for more efficient power electronics for telecommunications has driven research into AlGaN based high electron mobility transistors (HEMTs). However, the group III-nitrides material properties make them attractive for several other applications that have not received as much attention. This work focuses on developing group III-nitride based devices for novel applications. GaN is a robust, chemically inert, piezoelectric material, making it an ideal candidate for surface acoustic wave (SAW) devices designed for high temperature and/or harsh environment sensors. In this work, SAW devices based on GaN are developed for use in high temperature gas or chemical sensor applications. To increase device sensitivity, while maintaining a simple one-step photolithography fabrication process, devices were designed to operate at high harmonic frequencies. This allows for GHz regime operation without sub-micron fabrication. One potential market for this technology is continuous emissions monitoring of combustion gas vehicles. In addition to SAW devices, high electron mobility transistors (HEMTs) were developed. The epitaxial structure was characterized and the 2-D electron gas concentrations were simulated and compared to experimental results. Device fabrication processes were developed and are outlined. Fabricated devices were electrically measured and device performance is discussed.

Molten-Salt-Based Growth of Group III Nitrides

DOEpatents

Waldrip, Karen E.; Tsao, Jeffrey Y.; Kerley, Thomas M.

2008-10-14

A method for growing Group III nitride materials using a molten halide salt as a solvent to solubilize the Group-III ions and nitride ions that react to form the Group III nitride material. The concentration of at least one of the nitride ion or Group III cation is determined by electrochemical generation of the ions.

Biosorption of Cr (VI), Cr (III), Pb (II) and Cd (II) from aqueous solutions by Sargassum wightii and Caulerpa racemosa algal biomass

NASA Astrophysics Data System (ADS)

Tamilselvan, Narayanaswamy; Saurav, Kumar; Kannabiran, Krishnan

2012-03-01

Heavy metal pollution is one of the most important environmental problems today. Biosorption is an innovative technology that employs biological materials to accumulate heavy metals from waste water through metabolic process or physicochemical pathways of uptake. Even though several physical and chemical methods are available for removal of heavy metals, currently many biological materials such as bacteria, algae, yeasts and fungi have been widely used due to their good performance, low cost and large quantity of availability. The aim of the present study is to explore the biosorption of toxic heavy metals, Cr(VI), Cr(III), Pb(II) and Cd(II) by algal biomass obtained from algae Sargassum wightii (brown) and Caulerpa racemosa (green). Biosorption of algal biomass was found to be biomass concentration- and pH-dependent, while the maximal biosorption was found at pH 5.0 and with the metal concentration of 100 mg L-1. S. wightii showed the maximal metal biosorption at the biomass concentration of 25 g L-1, followed by C. racemosa with the maximal biosorption at 30 g L-1. S. wightii showed 78% biosorption of Cr(VI), Cr(III), Pb(II) and Cd(II) ions. C. racemosa exhibited 85% biosorption of Cd(II) and Cr(VI), and 50% biosorption of Cr(III) and Pb(II). The results of our study suggest that seaweed biomass can be used efficiently for biosorption of heavy metals.

A Microfabricated Segmented-Involute-Foil Regenerator for Enhancing Reliability and Performance of Stirling Engines. Phase III Final Report for the Radioisotope Power Conversion Technology NRA

NASA Technical Reports Server (NTRS)

Ibrahim, Mounir B.; Gedeon, David; Wood, Gary; McLean, Jeffrey

2009-01-01

Under Phase III of NASA Research Announcement contract NAS3-03124, a prototype nickel segmented-involute-foil regenerator was microfabricated and tested in a Sunpower Frequency-Test-Bed (FTB) Stirling convertor. The team for this effort consisted of Cleveland State University, Gedeon Associates, Sunpower Inc. and International Mezzo Technologies. Testing in the FTB convertor produced about the same efficiency as testing with the original random-fiber regenerator. But the high thermal conductivity of the prototype nickel regenerator was responsible for a significant performance degradation. An efficiency improvement (by a 1.04 factor, according to computer predictions) could have been achieved if the regenerator was made from a low-conductivity material. Also, the FTB convertor was not reoptimized to take full advantage of the microfabricated regenerator s low flow resistance; thus, the efficiency would likely have been even higher had the FTB been completely reoptimized. This report discusses the regenerator microfabrication process, testing of the regenerator in the Stirling FTB convertor, and the supporting analysis. Results of the pre-test computational fluid dynamics (CFD) modeling of the effects of the regenerator-test-configuration diffusers (located at each end of the regenerator) are included. The report also includes recommendations for further development of involute-foil regenerators from a higher-temperature material than nickel.

Problems of Determining the Content of Cr(VI) in Raw Materials and Materials Containing Chromite Ore.

PubMed

Stec, Katarzyna

2017-11-02

Materials made with chromite ore are widely applied in the industry metallurgy as well as in the foundry industry. The oxidation number of chromium in these materials is both (III) and (VI). Currently there are no procedures allowing proper determination of chrome in chromite ores and ore-containing materials. The analytical methods applied, which are dedicated to a very narrow range of materials, e.g., cement, and cannot be applied in the case of materials which, apart from trace amounts of Cr(VI), contain mainly compounds of Cr(III), Fe(III) as well as trace compounds of Cu(II), Ni(II) and V(V). In the work particular attention has been paid to the preparation of test samples and creating measurement conditions in which interferences from Cr(III) and Fe(III) spectral lines could be minimized. Two separate instrumental measurement techniques have been applied: Inductively Coupled Plasma-Atomic Emission Spectrometry (ICP AES) and the spectrophotometric method using diphenylcarbazide.

Virus-Inspired Nanogenes Free from Man-Made Materials for Host-Specific Transfection and Bio-Aided MR Imaging.

PubMed

Zhu, Jing-Yi; Zhang, Ming-Kang; Ding, Xian-Guang; Qiu, Wen-Xiu; Yu, Wu-Yang; Feng, Jun; Zhang, Xian-Zheng

2018-05-01

Many viruses have a lipid envelope derived from the host cell membrane that contributes much to the host specificity and the cellular invasion. This study puts forward a virus-inspired technology that allows targeted genetic delivery free from man-made materials. Genetic therapeutics, metal ions, and biologically derived cell membranes are nanointegrated. Vulnerable genetic therapeutics contained in the formed "nanogene" can be well protected from unwanted attacks by blood components and enzymes. The surface envelope composed of cancer cell membrane fragments enables host-specific targeting of the nanogene to the source cancer cells and homologous tumors while effectively inhibiting recognition by macrophages. High transfection efficiency highlights the potential of this technology for practical applications. Another unique merit of this technology arises from the facile combination of special biofunction of metal ions with genetic therapy. Typically, Gd(III)-involved nanogene generates a much higher T 1 relaxation rate than the clinically used Gd magnetic resonance imaging agent and harvests the enhanced MRI contrast at tumors. This virus-inspired technology points out a distinctive new avenue for the disease-specific transport of genetic therapeutics and other biomacromolecules. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

PREFACE: Focus on Materials Nanoarchitectonics Focus on Materials Nanoarchitectonics

NASA Astrophysics Data System (ADS)

Aono, Masakazu

2011-08-01

On behalf of the International Center for Materials Nanoarchitectonics (MANA), I wish to express our gratitude for the publication of this special issue of Science and Technology of Advanced Materials (STAM), which highlights our recent research activities at MANA. In this preface, I would like to briefly describe the history and then outline the direction of research at MANA. In 2007, Japan's Ministry of Education, Culture, Sports, Science and Technology (MEXT) launched the World Premier International Research Center Initiative (WPI Program) to create several frontier research centers in Japan. The aim was to facilitate cutting-edge research by promoting the participation of leading scientists from around the world and by providing an attractive research environment. One of the six centers of the WPI Program is MANA, established at the National Institute for Materials Science (NIMS) in October 2007. The direction of research at MANA is symbolized by the term 'nanoarchitectonics', which is part of the name MANA. What is nanoarchitectonics? In the past quarter century, nanotechnology has made impressive advances and has become an important pillar in the development of new materials. However, to explore its full potential, nanotechnology needs to stay on the path of innovation. In particular, the conventional analytic view of nanotechnology must yield to a certain synthetic approach. This is conducive to creating new functions that can be exhibited by nanoscale structural units through mutual interactions, even though these functions are not present in the isolated units. We coined the term nanoarchitectonics (first used in the name of the 1st International Symposium on Nanoarchitectonics Using Suprainteractions (NASI-1), organized by the author and his colleagues at Tsukuba, Japan, in November 2000) to express this innovation of nanotechnology. More specifically, nanoarchitectonics is a technology system where the aim is arranging nanoscale structural units, which are a group of atoms or molecules or a nanoscale functional component, in an intended configuration that creates a novel functionality through mutual interactions among those units. Materials nanoarchitectonics targets two hierarchical classes of materials development: nanomaterial creation and nanosystem organization. MANA pursues the nanoarchitectonics concept described above on the basis of five key technologies: (i) controlled self-organization, (ii) chemical nanomanipulation, (iii) field-induced materials control, (iv) novel manipulations of atoms and molecules and (v) theoretical modeling and design. They are harnessed for scientific research organized into four fields: (i) nano-materials, (ii) nano-system, (iii) nano-green and (iv) nano-bio. In the nano-materials field, various novel nanoscale materials are created by utilizing unique synthetic techniques based on nanoarchitectonics, including soft-chemical, colloid and supramolecular processes. A typical example is the development of nanomaterials using soft-chemical nanosheet technology. In the nano-system field, researchers explore how nanoscale structural elements can produce novel functionalities through their mutual interactions and investigate how such novel functionalities can be materialized using nanoarchitectonics. One example is the development of a nanoscale system formed by atomic switches for the realization of inorganic neuromorphic circuits. The nano-green field develops new materials for electro- and photocatalysts, rechargeable batteries, solar and fuel cells, etc, which are necessary for the realization of a sustainable society. The nano-bio field sets its research direction towards material therapy and designs new materials for regenerative medicine. This special issue of STAM contains eleven papers that highlight the recent results obtained in the four research fields of MANA described above, although the main emphasis is placed on the nano-materials and nano-green fields. I hope that this special issue will introduce the research activities of MANA in the four years since its establishment and stimulate collaborations between MANA and other institutions around the world.

Adsorption of transition metal ions from aqueous solutions onto a novel silica gel matrix inorganic-organic composite material.

PubMed

Yin, Ping; Xu, Qiang; Qu, Rongjun; Zhao, Guifang; Sun, Yanzhi

2010-01-15

A novel inorganic-organic composite material silica gel microspheres encapsulated by imidazole functionalized polystyrene (SG-PS-azo-IM) has been synthesized and characterized. This composite material was used to investigate the adsorption of Cr(III), Mn(II), Fe(III), Ni(II), Cu(II), Zn(II), Hg(II), Pb(II), Pd(II), Pt(II), Ag(I), and Au(III) from aqueous solutions, and the research results displayed that SG-PS-azo-IM has the highest adsorption capacity for Au(III). Langmuir and Freundlich isotherm models were applied to analyze the experimental data, the best interpretation for the experimental data was given by the Langmuir isotherm equation, and the maximum adsorption capacity for Au(III) is 1.700 mmol/g. The adsorption selectivity, the dynamic adsorption and desorption properties of SG-PS-azo-IM for Au(III) have also been studied. The results showed that SG-PS-azo-IM had excellent adsorption for Au(III) in four binary ions system, especially in the systems of Au(III)-Zn(II) and Au(III)-Cu(II), and almost Au(III) could be desorbed with the eluent solution of 0.5% thiourea in 1 mol/L HCl. Moreover, this novel composite material was used to preconcentrate Au(III) before its determination by flame atomic adsorption spectrometry. In the initial concentration range of 0.10-0.20 microg/mL, multiple of enrichment could reach 5.28. Thus, silica gel encapsulated by polystyrene coupling with imidazole (SG-PS-azo-IM) is favorable and useful for the removal of transition metal ions, and the high adsorption capacity makes it a good promising candidate material for Au(III) removal.

Installation Restoration Program. Phase II. Confirmation/Quantification Stage 1 for George Air Force Base, California.

DTIC Science & Technology

1985-08-30

technology for objective assessment of adverse effects. A Phase III requirement can be identified at any time during the program. 4. Phase IV - Operations...earth’s field can be asso- ciated with naturally occurring materials, or buried iron objects and remnant cultural features associated with man’s...for as * adequately as that of its own personnel.I 2. Obviously, such objectives can be attained only by the cooperation of all concerned. Therefore, it

Valorisation of post-sorption materials: Opportunities, strategies, and challenges.

PubMed

Harikishore Kumar Reddy, D; Vijayaraghavan, K; Kim, Jeong Ae; Yun, Yeoung-Sang

2017-04-01

Adsorption is a facile, economic, eco-friendly and low-energy requiring technology that aims to separate diverse compounds (ions and molecules) from one phase to another using a wide variety of adsorbent materials. To date, this technology has been used most often for removal/recovery of pollutants from aqueous solutions; however, emerging post-sorption technologies are now enabling the manufacture of value-added key adsorption products that can subsequently be used for (i) fertilizers, (ii) catalysis, (iii) carbonaceous metal nanoparticle synthesis, (iv) feed additives, and (v) biologically active compounds. These new strategies ensure the sustainable valorisation of post-sorption materials as an economically viable alternative to the engineering of other green chemical products because of the ecological affability, biocompatibility, and widespread accessibility of post-sorption materials. Fertilizers and feed additives manufactured using sorption technology contain elements such as N, P, Cu, Mn, and Zn, which improve soil fertility and provide essential nutrients to animals and humans. This green and effective approach to managing post-sorption materials is an important step in reaching the global goals of sustainability and healthy human nutrition. Post-sorbents have also been utilized for the harvesting of metal nanoparticles via modern catalytic pyrolysis techniques. The resulting materials exhibited a high surface area (>1000m 2 /g) and are further used as catalysts and adsorbents. Together with the above possibilities, energy production from post-sorbents is under exploration. Many of the vital 3E (energy, environment, and economy) problems can be addressed using post-sorption materials. In this review, we summarize a new generation of applications of post-adsorbents as value-added green chemical products. At the end of each section, scientific challenges, further opportunities, and issues related to toxicity are discussed. We believe this critical evaluation not only delivers essential contextual information to researchers in the field but also stimulates new ideas and applications to further advance post-sorbent applications. Copyright © 2016 Elsevier B.V. All rights reserved.

Managing Information Technology: Facing the Issues. Track III: Organization and Personnel Issues.

ERIC Educational Resources Information Center

CAUSE, Boulder, CO.

Seven papers making up Track III of the 1989 conference of the Professional Association for the Management of Information Technology in Higher Education (known as CAUSE, an acronym of the association's former name) are presented in this document. The focus of Track III is on organization and personnel issues, and the papers include: "How to…

Transferable tight-binding model for strained group IV and III-V materials and heterostructures

NASA Astrophysics Data System (ADS)

Tan, Yaohua; Povolotskyi, Michael; Kubis, Tillmann; Boykin, Timothy B.; Klimeck, Gerhard

2016-07-01

It is critical to capture the effect due to strain and material interface for device level transistor modeling. We introduce a transferable s p3d5s* tight-binding model with nearest-neighbor interactions for arbitrarily strained group IV and III-V materials. The tight-binding model is parametrized with respect to hybrid functional (HSE06) calculations for varieties of strained systems. The tight-binding calculations of ultrasmall superlattices formed by group IV and group III-V materials show good agreement with the corresponding HSE06 calculations. The application of the tight-binding model to superlattices demonstrates that the transferable tight-binding model with nearest-neighbor interactions can be obtained for group IV and III-V materials.

Analysis of Crystal Structure of Fe3O4 Thin Films Based on Iron Sand Growth by Spin Coating Method

NASA Astrophysics Data System (ADS)

Rianto, D.; Yulfriska, N.; Murti, F.; Hidayati, H.; Ramli, R.

2018-04-01

Recently, iron sand used as one of base materials in the steel industry. However, the content of iron sand can be used as starting materials in sensor technology in the form of thin films. In this paper, we report the analysis of crystal structure of magnetite thin film based on iron sand from Tiram’s Beach. The magnetic content of sand separated by a permanent magnet, then it was milled at 30 hours milling time. In order to increase the purity of magnetite, it washed after milling using aquades under magnetic separation by a magnet permanent. The thin film has been prepared using iron (III) nitrate by sol–gel technique. The precursor is resulted by dissolving magnetite in oxalic acid and nitric acid. Then, solution of iron (III) nitrate dissolved in ethylene glycol was applied on glass substrates by spin coating. The X-Ray Diffraction is operated thin film characterization. The structure of magnetite has been studied based on X-Ray Peaks that correspond to magnetite content of thin films.

Technology I, II, and III: Criteria for Understanding and Improving the Practice of Instructional Technology

ERIC Educational Resources Information Center

McDonald, Jason K.; Gibbons, Andrew S.

2009-01-01

In this paper we describe the criteria of "Technology I, II, and III," which some instructional theorists have proposed to describe the differences between a formulaic and a reflective approach to solving educational problems. In a recent study, we applied these criteria to find evidence of a "technological gravity" that pulls practitioners away…

A review of recent progress in heterogeneous silicon tandem solar cells

NASA Astrophysics Data System (ADS)

Yamaguchi, Masafumi; Lee, Kan-Hua; Araki, Kenji; Kojima, Nobuaki

2018-04-01

Silicon solar cells are the most established solar cell technology and are expected to dominate the market in the near future. As state-of-the-art silicon solar cells are approaching the Shockley-Queisser limit, stacking silicon solar cells with other photovoltaic materials to form multi-junction devices is an obvious pathway to further raise the efficiency. However, many challenges stand in the way of fully realizing the potential of silicon tandem solar cells because heterogeneously integrating silicon with other materials often degrades their qualities. Recently, above or near 30% silicon tandem solar cell has been demonstrated, showing the promise of achieving high-efficiency and low-cost solar cells via silicon tandem. This paper reviews the recent progress of integrating solar cell with other mainstream solar cell materials. The first part of this review focuses on the integration of silicon with III-V semiconductor solar cells, which is a long-researched topic since the emergence of III-V semiconductors. We will describe the main approaches—heteroepitaxy, wafer bonding and mechanical stacking—as well as other novel approaches. The second part introduces the integration of silicon with polycrystalline thin-film solar cells, mainly perovskites on silicon solar cells because of its rapid progress recently. We will also use an analytical model to compare the material qualities of different types of silicon tandem solar cells and project their practical efficiency limits.

III-V compound semiconductor growth on silicon via germanium buffer and surface passivation for CMOS technology

NASA Astrophysics Data System (ADS)

Choi, Donghun

Integration of III-V compound semiconductors on silicon substrates has recently received much attention for the development of optoelectronic and high speed electronic devices. However, it is well known that there are some key challenges for the realization of III-V device fabrication on Si substrates: (i) the large lattice mismatch (in case of GaAs: 4.1%), and (ii) the formation of antiphase domain (APD) due to the polar compound semiconductor growth on non-polar elemental structure. Besides these growth issues, the lack of a useful surface passivation technology for compound semiconductors has precluded development of metal-oxide-semiconductor (MOS) devices and causes high surface recombination parasitics in scaled devices. This work demonstrates the growth of high quality III-V materials on Si via an intermediate Ge buffer layer and some surface passivation methods to reduce interface defect density for the fabrication of MOS devices. The initial goal was to achieve both low threading dislocation density (TDD) and low surface roughness on Ge-on-Si heterostructure growth. This was achieved by repeating a deposition-annealing cycle consisting of low temperature deposition + high temperature-high rate deposition + high temperature hydrogen annealing, using reduced-pressure chemical-vapor deposition (CVD). We then grew III-V materials on the Ge/Si virtual substrates using molecular-beam epitaxy (MBE). The relationship between initial Ge surface configuration and antiphase boundary formation was investigated using surface reflection high-energy electron diffraction (RHEED) patterns and atomic force microscopy (AFM) image analysis. In addition, some MBE growth techniques, such as migration enhanced epitaxy (MEE) and low temperature GaAs growth, were adopted to improve surface roughness and solve the Ge self-doping problem. Finally, an Al2O3 gate oxide layer was deposited using atomic-layer-deposition (ALD) system after HCl native oxide etching and ALD in-situ pre-annealing at 400 °C. A 100 nm thick aluminum layer was deposited to form the gate contact for a MOS device fabrication. C-V measurement results show very small frequency dispersion and 200-300 mV hysteresis, comparable to our best results for InGaAs/GaAs MOS structures on GaAs substrate. Most notably, the quasi-static C-V curve demonstrates clear inversion layer formation. I-V curves show a reasonable leakage current level. The inferred midgap interface state density, Dit, of 2.4 x 1012 eV-1cm-2 was calculated by combined high-low frequency capacitance method. In addition, we investigated the interface properties of amorphous LaAlO 3/GaAs MOS capacitors fabricated on GaAs substrate. The surface was protected during sample transfer between III-V and oxide molecular beam deposition (MBD) chambers by a thick arsenic-capping layer. An annealing method, a low temperature-short time RTA followed by a high temperature RTA, was developed, yielding extremely small hysteresis (˜ 30 mV), frequency dispersion (˜ 60 mV), and interface trap density (mid 1010 eV-1cm -2). We used capacitance-voltage (C-V) and current-voltage (I-V) measurements for electrical characterization of MOS devices, tapping-mode AFM for surface morphology analysis, X-ray photoelectron spectroscopy (XPS) for chemical elements analysis of interface, cross section transmission-electron microscopy (TEM), X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), and photoluminescence (PL) measurement for film quality characterization. This successful growth and appropriate surface treatments of III-V materials provides a first step for the fabrication of III-V optical and electrical devices on the same Si-based electronic circuits.

Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity.

PubMed

Li, Kun; Ng, Kar Wei; Tran, Thai-Truong D; Sun, Hao; Lu, Fanglu; Chang-Hasnain, Connie J

2015-11-11

The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.

US Naval Research Laboratory's Current Space Photovoltaic Experiemtns

NASA Astrophysics Data System (ADS)

Jenkins, Phillip; Walters, Robert; Messenger, Scott; Krasowski, Michael

2008-09-01

The US Naval Research Laboratory (NRL) has a rich history conducting space photovoltaic (PV) experiments starting with Vanguard I, the first solar powered satellite in 1958. Today, NRL in collaboration with the NASA Glenn Research Center, is engaged in three flight experiments demonstrating a wide range of PV technologies in both LEO and HEO orbits. The Forward Technology Solar Cell Experiment (FTSCE)[1], part of the 5th Materials on the International Space Station Experiment (MISSE-5), flew for 13 months on the International Space Station in 2005-2006. The FTSCE provided in-situ I-V monitoring of advanced III-V multi-junction cells and laboratory prototypes of thin film and other next generation technologies. Two experiments under development will provide more opportunities to demonstrate advanced solar cells and characterization electronics that are easily integrated on a wide variety of spacecraft bus architectures.

25 CFR 163.40 - Indian and Alaska Native forestry education assistance.

Code of Federal Regulations, 2011 CFR

2011-04-01

... forestry-related field which could include courses on indigenous culture; and (iii) To create an... technologies as well as native indigenous forestry technologies; (iii) Involve students in projects and...

25 CFR 163.40 - Indian and Alaska Native forestry education assistance.

Code of Federal Regulations, 2012 CFR

2012-04-01

... forestry-related field which could include courses on indigenous culture; and (iii) To create an... technologies as well as native indigenous forestry technologies; (iii) Involve students in projects and...

25 CFR 163.40 - Indian and Alaska Native forestry education assistance.

Code of Federal Regulations, 2013 CFR

2013-04-01

... forestry-related field which could include courses on indigenous culture; and (iii) To create an... technologies as well as native indigenous forestry technologies; (iii) Involve students in projects and...

25 CFR 163.40 - Indian and Alaska Native forestry education assistance.

Code of Federal Regulations, 2014 CFR

2014-04-01

... forestry-related field which could include courses on indigenous culture; and (iii) To create an... technologies as well as native indigenous forestry technologies; (iii) Involve students in projects and...

Postsynthesis Modification of a Metallosalen-Containing Metal-Organic Framework for Selective Th(IV)/Ln(III) Separation.

PubMed

Guo, Xiang-Guang; Qiu, Sen; Chen, Xiuting; Gong, Yu; Sun, Xiaoqi

2017-10-16

An uncoordinated salen-containing metal-organic framework (MOF) obtained through postsynthesis removal of Mn(III) ions from a metallosalen-containing MOF material has been used for selective separation of Th(IV) ion from Ln(III) ions in methanol solutions for the first time. This material exhibited an adsorption capacity of 46.345 mg of Th/g. The separation factors (β) of Th(IV)/La(III), Th(IV)/Eu(III), and Th(IV)/Lu(III) were 10.7, 16.4, and 10.3, respectively.

III-V aresenide-nitride semiconductor materials and devices

NASA Technical Reports Server (NTRS)

Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

1997-01-01

III-V arsenide-nitride semiconductor crystals, methods for producing such crystals and devices employing such crystals. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

Spinoff from a Mooncraft Technology

NASA Technical Reports Server (NTRS)

1988-01-01

Avco Specialty Materials' Chartek III fireproofing provides longterm fire protection for structural steel in high risk industrial applications such as structural conduits, pipes and valves of offshore platforms, and storage tanks used in hydrocarbon processing industry. In the presence of fire, Chartek III fire-proofing provides two kinds of protection. One of them is ablation, technique used on Apollo involving dissipation of heat by burnoff. The other is called intumescence or swelling. Heat causes the Chartek coating to swell to a thickness six times greater than when it was applied forming a protective blanket of char that retards transfer of heat to the steel structure. Mesh reinforcement keeps the char intact and reduces metal fatigue. Chartek provides fire protection for as much as two or three hours depending on the type of fire and the thickness of the coating applied.

All-nitride AlxGa1−xN:Mn/GaN distributed Bragg reflectors for the near-infrared

PubMed Central

Capuzzo, Giulia; Kysylychyn, Dmytro; Adhikari, Rajdeep; Li, Tian; Faina, Bogdan; Tarazaga Martín-Luengo, Aitana; Bonanni, Alberta

2017-01-01

Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not only for the lighting of the future, but also for the new generation of high-power electronic and spintronic devices. While III-nitride optoelectronics in the visible and ultraviolet spectral range is widely established, all-nitride efficient devices in the near-infrared (NIR) are still wanted. Here, through a comprehensive protocol of design, modeling, epitaxial growth and in-depth characterization, we develop AlxGa1−xN:Mn/GaN NIR distributed Bragg reflectors and we show their efficiency in combination with GaN:(Mn,Mg) layers containing Mn-Mgk complexes optically active in the near-infrared range of wavelengths. PMID:28198432

Application of zeolitic material synthesized from thermally treated sediment to the removal of trivalent chromium from wastewater.

PubMed

Guan, Qingyu; Wu, Deyi; Lin, Yan; Chen, Xuechu; Wang, Xinze; Li, Chunjie; He, Shengbing; Kong, Hainan

2009-08-15

Zeolitic materials were synthesized from thermally treated sediment by alkali treatment using different NaOH/sediment ratios. Characterization of the materials was done by XRD, FTIR, cation exchange capacity and specific surface area. Use of high NaOH/sediment ratio favored the formation of zeolite. The potential value of the zeolitic materials for the retention of trivalent chromium from water was examined. The maximum of Cr(III) sorption by the zeolitic materials, determined by a repeated batch equilibration method, ranged from 38.9 to 75.8 mg/g which was much greater than that of the thermally treated sediment (6.3 mg/g). No release of sorbed Cr(III) by 1.0M MgCl(2) at pH 7 was observed but Cr(III) desorption by ionic electrolyte increased with decreasing pH. The zeolitic materials could completely remove Cr(III) from wastewater even in the presence of Na(+) and Ca(2+) with high concentrations with a dose above 2.5 g/L. The pH-dependent desorption behavior and the high selectivity of zeolitic material for Cr(III) were explained by sorption at surface hydroxyl sites and formation of surface precipitates.

Development of cadmium-free quantum dot for intracellular labelling through electroporation or lipid-calcium-phosphate

NASA Astrophysics Data System (ADS)

Liu, Ying-Feng; Hung, Wei-Ling; Hou, Tzh-Yin; Huang, Hsiu-Ying; Lin, Cheng-An J.

2016-04-01

Traditional fluorescent labelling techniques has severe photo-bleaching problem such as organic dyes and fluorescent protein. Quantum dots made up of traditional semiconductor (CdSe/ZnS) material has sort of biological toxicity. This research has developed novel Cd-free quantum dots divided into semiconductor (Indium phosphide, InP) and noble metal (Gold). Former has lower toxicity compared to traditional quantum dots. Latter consisting of gold (III) chloride (AuCl3) and toluene utilizes sonochemical preparation and different stimulus to regulate fluorescent wavelength. Amphoteric macromolecule surface technology and ligand Exchange in self-Assembled are involved to develop hydrophilic nanomaterials which can regulate the number of grafts per molecule of surface functional groups. Calcium phosphate (CaP) nanoparticle (NP) with an asymmetric lipid bilayer coating technology developed for intracellular delivery and labelling has synthesized Cd-free quantum dots possessing high brightness and multi-fluorescence successfully. Then, polymer coating and ligand exchange transfer to water-soluble materials to produce liposome nanomaterials as fluorescent probes and enhancing medical applications of nanotechnology.

Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Sha, Yi-Gao

1995-01-01

The studies on the crystal growth and characterization of II-VI wide band gap compound semiconductors, such as ZnTe, CdS, ZnSe and ZnS, have been conducted over the past three decades. The research was not quite as extensive as that on Si, III-V, or even narrow band gap II-VI semiconductors because of the high melting temperatures as well as the specialized applications associated with these wide band gap semiconductors. In the past several years, major advances in the thin film technology such as Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) have demonstrated the applications of these materials for the important devices such as light-emitting diode, laser and ultraviolet detectors and the tunability of energy band gap by employing ternary or even quaternary systems of these compounds. At the same time, the development in the crystal growth of bulk materials has not advanced far enough to provide low price, high quality substrates needed for the thin film growth technology.

Effects of hydrogen on acceptor activation in ternary nitride semiconductors

DOE PAGES

Fioretti, Angela N.; Stokes, Adam; Young, Matthew R.; ...

2017-02-09

Doping control is necessary to unlock the scientific and technological potential of many materials, including ternary II-IV-nitride semiconductors, which are closely related to binary GaN. In particular, ZnSnN 2 has been reported to have degenerate doping density, despite bandgap energies that are well suited for solar energy conversion. Here, we show that annealing Zn-rich Zn 1+xSn 1-xN 2 grown with added hydrogen reduces its free electron density by orders of magnitude, down to 4 x 10 16 cm -3. This experimental observation can be explained by hydrogen passivation of acceptors in Zn 1+xSn 1-xN 2 during growth, lowering the drivingmore » force for unintentional donor formation. Lastly, these results indicate that the doping control principles used in GaN can be translated to ZnSnN 2, suggesting that other strategies used in binary III-Vs can be applied to accelerate the technological development of ternary II-IV-N 2 materials.« less

Solar Photovoltaics Technology: The Revolution Begins . . .

NASA Astrophysics Data System (ADS)

Kazmerski, Lawrence

2009-11-01

The prospects of current and coming solar-photovoltaic (PV) technologies are envisioned, arguing this solar-electricity source is at a tipping point in the complex worldwide energy outlook. The emphasis of this presentation is on R&D advances (cell, materials, and module options), with indications of the limitations and strengths of crystalline (Si and GaAs) and thin-film (a-Si:H, Si, Cu(In,Ga)(Se,S)2, CdTe). The contributions and technological pathways for now and near-term technologies (silicon, III-Vs, and thin films) and status and forecasts for next- generation PV (organics, nanotechnologies, non-conventional junction approaches) are evaluated. Recent advances in concentrators with efficiencies headed toward 50%, new directions for thin films (20% and beyond), and materials/device technology issues are discussed in terms of technology progress. Insights into technical and other investments needed to tip photovoltaics to its next level of contribution as a significant clean-energy partner in the world energy portfolio. The need for R&D accelerating the now and imminent (evolutionary) technologies balanced with work in mid-term (disruptive) approaches is highlighted. Moreover, technology progress and ownership for next generation solar PV mandates a balanced investment in research on longer-term (the revolution needs revolutionary approaches to sustain itself) technologies (quantum dots, multi-multijunctions, intermediate-band concepts, nanotubes, bio-inspired, thermophotonics, solar hydrogen. . . ) having high-risk, but extremely high performance and cost returns for our next generations of energy consumers. Issues relating to manufacturing are explored-especially with the requirements for the next-generation technologies. This presentation provides insights into how this technology has developed-and where the R&D investments should be made and we can expect to be by this mid-21st century.

InAs/GaSb type-II superlattice infrared detectors: three decades of development

NASA Astrophysics Data System (ADS)

Rogalski, A.; Kopytko, M.; Martyniuk, P.

2017-02-01

Recently, there has been considerable progress towards III-V antimonide-based low dimensional solids development and device design innovations. From a physics point of view, the type-II InAs/GaSb superlattice is an extremely attractive proposition. Their development results from two primary motivations: the perceived challenges of reproducibly fabricating high-operability HgCdTe FPAs at reasonable cost and theoretical predictions of lower Auger recombination for type-II superlattice (T2SL) detectors compared to HgCdTe. Lower Auger recombination should be translated into a fundamental advantage for T2SL over HgCdTe in terms of lower dark current and/or higher operating temperature, provided other parameters such as Shockley-Read-Hall lifetime are equal. Based on these promising results it is obvious now that the InAs/GaSb superlattice technology is competing with HgCdTe third generation detector technology with the potential advantage of standard III-V technology to be more competitive in costs and as a consequence series production pricing. Comments to the statement whether the superlattice IR photodetectors can outperform the "bulk" narrow gap HgCdTe detectors is one of the most important questions for the future of IR photodetectors presented by Rogalski at the April 2006 SPIE meeting in Orlando, Florida, are more credible today and are presented in this paper. It concerns the trade-offs between two most competing IR material technologies: InAs/GaSb type-II superlattices and HgCdTe ternary alloy system.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kennedy, W.S.; Kovacic, S.M.; Rea, E.C.

The development of ballistic missiles and particularly intercontinental ballistic missiles (ICBMs) by the U.S. space technology manufacturer is examined. Collaboration by the company with the U.S. Air Force is described which began in the 1950s and combined systems engineering and technical assistance. Missile products reviewed in this paper include Atlas, Thor, Titans I and II, Minuteman I, II, III, the Peacekeeper, and the small ICBM. The company developed facilities and programs to support the R and D activities for the missile products, and descriptions are given of the Space Technologies Laboratory and the Ballistic Missiles Division. Contributions to ICBM technologiesmore » by the concern include carbon-carbon nozzle materials, propellant formulation data, movable nozzles, casting techniques for large volumes of propellants, and studies of fracture mechanics. 41 refs.« less

Fungal Enzymes for Bio-Products from Sustainable and Waste Biomass.

PubMed

Gupta, Vijai K; Kubicek, Christian P; Berrin, Jean-Guy; Wilson, David W; Couturier, Marie; Berlin, Alex; Filho, Edivaldo X F; Ezeji, Thaddeus

2016-07-01

Lignocellulose, the most abundant renewable carbon source on earth, is the logical candidate to replace fossil carbon as the major biofuel raw material. Nevertheless, the technologies needed to convert lignocellulose into soluble products that can then be utilized by the chemical or fuel industries face several challenges. Enzymatic hydrolysis is of major importance, and we review the progress made in fungal enzyme technology over the past few years with major emphasis on (i) the enzymes needed for the conversion of polysaccharides (cellulose and hemicellulose) into soluble products, (ii) the potential uses of lignin degradation products, and (iii) current progress and bottlenecks for the use of the soluble lignocellulose derivatives in emerging biorefineries. Copyright © 2016 Elsevier Ltd. All rights reserved.

49 CFR 173.468 - Test for LSA-III material.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 49 Transportation 2 2014-10-01 2014-10-01 false Test for LSA-III material. 173.468 Section 173.468 Transportation Other Regulations Relating to Transportation PIPELINE AND HAZARDOUS MATERIALS SAFETY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION HAZARDOUS MATERIALS REGULATIONS SHIPPERS-GENERAL REQUIREMENTS FOR SHIPMENTS AND PACKAGINGS Class 7 ...

49 CFR 173.468 - Test for LSA-III material.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 49 Transportation 2 2011-10-01 2011-10-01 false Test for LSA-III material. 173.468 Section 173.468 Transportation Other Regulations Relating to Transportation PIPELINE AND HAZARDOUS MATERIALS SAFETY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION HAZARDOUS MATERIALS REGULATIONS SHIPPERS-GENERAL REQUIREMENTS FOR SHIPMENTS AND PACKAGINGS Class 7 ...

Selective removal of cesium from aqueous solutions with nickel (II) hexacyanoferrate (III) functionalized agricultural residue-walnut shell.

PubMed

Ding, Dahu; Lei, Zhongfang; Yang, Yingnan; Feng, Chuanping; Zhang, Zhenya

2014-04-15

A novel nickel (II) hexacyanoferrate (III) functionalized agricultural residue-walnut shell (Ni(II)HCF(III)-WS) was developed to selectively remove cesium ion (Cs(+)) from aqueous solutions. This paper showed the first integral study on Cs(+) removal behavior and waste reduction analysis by using biomass adsorption material. The results indicated that the removal process was rapid and reached saturation within 2h. As a special characteristic of Ni(II)HCF(III)-WS, acidic condition was preferred for Cs(+) removal, which was useful for extending the application scope of the prepared biomass material in treating acidic radioactive liquid waste. The newly developed Ni(II)HCF(III)-WS could selectively remove Cs(+) though the coexisting ions (Na(+) and K(+) in this study) exhibited negative effects. In addition, approximately 99.8% (in volume) of the liquid waste was reduced by using Ni(II)HCF(III)-WS and furthermore 91.9% (in volume) of the spent biomass material (Cs-Ni(II)HCF(III)-WS) was reduced after incineration (at 500°C for 2h). Due to its relatively high distribution coefficient and significant volume reduction, Ni(II)HCF(III)-WS is expected to be a promising material for Cs(+) removal in practice. Copyright © 2014 Elsevier B.V. All rights reserved.

30 CFR 57.22222 - Ventilation materials (I-A, I-B, I-C, II-A, III, V-A, and V-B mines).

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Ventilation materials (I-A, I-B, I-C, II-A, III, V-A, and V-B mines). 57.22222 Section 57.22222 Mineral Resources MINE SAFETY AND HEALTH....22222 Ventilation materials (I-A, I-B, I-C, II-A, III, V-A, and V-B mines). Brattice cloth and...

30 CFR 57.22222 - Ventilation materials (I-A, I-B, I-C, II-A, III, V-A, and V-B mines).

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Ventilation materials (I-A, I-B, I-C, II-A, III, V-A, and V-B mines). 57.22222 Section 57.22222 Mineral Resources MINE SAFETY AND HEALTH....22222 Ventilation materials (I-A, I-B, I-C, II-A, III, V-A, and V-B mines). Brattice cloth and...

Mechanism of selenite removal by a mixed adsorbent based on Fe-Mn hydrous oxides studied using X-ray absorption spectroscopy.

PubMed

Chubar, Natalia; Gerda, Vasyl; Szlachta, Małgorzata

2014-11-18

Selenium cycling in the environment is greatly controlled by various minerals, including Mn and Fe hydrous oxides. At the same time, such hydrous oxides are the main inorganic ion exchangers suitable (on the basis of their chemical nature) to sorb (toxic) anions, separating them from water solutions. The mechanism of selenite adsorption by the new mixed adsorbent composed of a few (amorphous and crystalline) phases [maghemite, MnCO3, and X-ray amorphous Fe(III) and Mn(III) hydrous oxides] was studied by extended X-ray absorption fine structure (EXAFS) spectroscopy [supported by Fourier transform infrared (FTIR) and X-ray diffraction (XRD) data]. The complexity of the porous adsorbent, especially the presence of the amorphous phases of Fe(III) and Mn(III) hydrous oxides, is the main reason for its high selenite removal performance demonstrated by batch and column adsorption studies shown in the previous work. Selenite was bound to the material via inner-sphere complexation (via oxygen) to the adsorption sites of the amorphous Fe(III) and Mn(III) oxides. This anion was attracted via bidentate binuclear corner-sharing coordination between SeO3(2-) trigonal pyramids and both FeO6 and MnO6 octahedra; however, the adsorption sites of Fe(III) hydrous oxides played a leading role in selenite removal. The contribution of the adsorption sites of Mn(III) oxide increased as the pH decreased from 8 to 6. Because most minerals have a complex structure (they are seldom based on individual substances) of various crystallinity, this work is equally relevant to environmental science and environmental technology because it shows how various solid phases control cycling of chemical elements in the environment.

Dental ceramics: a review of new materials and processing methods.

PubMed

Silva, Lucas Hian da; Lima, Erick de; Miranda, Ranulfo Benedito de Paula; Favero, Stéphanie Soares; Lohbauer, Ulrich; Cesar, Paulo Francisco

2017-08-28

The evolution of computerized systems for the production of dental restorations associated to the development of novel microstructures for ceramic materials has caused an important change in the clinical workflow for dentists and technicians, as well as in the treatment options offered to patients. New microstructures have also been developed by the industry in order to offer ceramic and composite materials with optimized properties, i.e., good mechanical properties, appropriate wear behavior and acceptable aesthetic characteristics. The objective of this literature review is to discuss the main advantages and disadvantages of the new ceramic systems and processing methods. The manuscript is divided in five parts: I) monolithic zirconia restorations; II) multilayered dental prostheses; III) new glass-ceramics; IV) polymer infiltrated ceramics; and V) novel processing technologies. Dental ceramics and processing technologies have evolved significantly in the past ten years, with most of the evolution being related to new microstructures and CAD-CAM methods. In addition, a trend towards the use of monolithic restorations has changed the way clinicians produce all-ceramic dental prostheses, since the more aesthetic multilayered restorations unfortunately are more prone to chipping or delamination. Composite materials processed via CAD-CAM have become an interesting option, as they have intermediate properties between ceramics and polymers and are more easily milled and polished.

An economic analysis of the processing technologies in CDW recycling platforms.

PubMed

Oliveira Neto, Raul; Gastineau, Pascal; Cazacliu, Bogdan Grigore; Le Guen, Lauredan; Paranhos, Régis Sebben; Petter, Carlos Otávio

2017-02-01

This paper proposes an economic analysis of three different types of processing in CDW (construction and demolition waste) recycling platforms, according to the sophistication of the processing technologies (current advanced, advanced and advanced sorting). The methodology that is adopted is in the economic evaluation concept of projects and is classified with a scoping study phase. In these contexts, three levels of CDW processing capabilities for recycling platforms are analyzed (100, 300 and 600 thousand tons per year). This article considers databases obtained from similar projects that have been published in the specialized literature; the data sources are primarily from the European continent. The paper shows that current advanced process has better economic performance, in terms of IRR, related to the other two processes. The IRR associated with advanced and advanced sorting processes could be raised by, (i) higher price of secondary primary material, and/or (ii) higher capacity of platforms, and/or (iii) higher sharing of secondary primary material in the total production. The first two points depend on the market conditions (prices and total quantity of CDW available) and (potential) fiscal or incentive policies. The last one depends on technological progress. Copyright © 2016 Elsevier Ltd. All rights reserved.

Installation Restoration Program. Phase II: Stage 1 Problem Confirmation Study, Duluth International Airport, Duluth, Minnesota.

DTIC Science & Technology

1984-10-01

8 iii "i t-. Table of Contents (cont.) Section Title Page -APPENDIX A Acronyms, Definitions, Nomenclature and Units of Measure B Scope of Work, Task...Identification/Records Search Phase II - Problem Confirmation and Quantification Phase III - Technology Base Development Phase IV - Corrective Action Only...Problem Identification/Records Search Phase II - Problem Confirmation and Quantification Phase III - Technology Base Development Phase IV - Corrective

SELENIUM TREATMENT/REMOVAL ALTERNATIVES DEMONSTRATION PROJECT - MINE WASTE TECHNOLOGY PROGRAM ACTIVITY III, PROJECT 20

EPA Science Inventory

This document is the final report for EPA's Mine WAste Technology Program (MWTP) Activity III, Project 20--Selenium Treatment/Removal Alternatives Demonstration project. Selenium contamination originates from many sources including mining operations, mineral processing, abandoned...

Environmental Technology Verification (ETV) Program Case Studies: Demonstrating Program Outcomes, Volume III

EPA Science Inventory

This booklet, ETV Program Case Studies: Demonstrating Program Outcomes, Volume III contains two case studies, addressing verified environmental technologies for decentalized wastewater treatment and converting animal waste to energy. Each case study contains a brief description ...

Energetic Materials - Technology, Manufacturing and Processing, 27th International Annual Conference of ICT June 25 - June 28, 1996 Karisruhe, Federal Republic of Germany.

DTIC Science & Technology

1997-02-01

PROPELLANTS WITH VARYING COMPOSITION L.F. Dimaranan, I. Lee, F.E. Hudson III V12 A COMBUSTION MODEL FOR AN/HTPB-IPDI COMPOSITE SOLID PROPELLANTS P... COMPOSITE PROPELLANTS WITH A LOW PRESSURE EXPONENT SUITABLE FOR NOZZLELESS BOOSTER MOTORS G.J. van Zyl V21 PROPERTIES OF AN AND PSAN/GAP-PROPELLANTS K...APPLICATION B.N. Kondrikov SENSITIVITY TO PROJECTILE IMPACT OF PRE-HEATED EXPLOSIVE COMPOSITIONS H.Cherin, D. Lemoine, L. Gautier VULNERABILITY TESTING OF

Implications of the Differential Toxicological Effects of III-V Ionic and Particulate Materials for Hazard Assessment of Semiconductor Slurries.

PubMed

Jiang, Wen; Lin, Sijie; Chang, Chong Hyun; Ji, Zhaoxia; Sun, Bingbing; Wang, Xiang; Li, Ruibin; Pon, Nanetta; Xia, Tian; Nel, André E

2015-12-22

Because of tunable band gaps, high carrier mobility, and low-energy consumption rates, III-V materials are attractive for use in semiconductor wafers. However, these wafers require chemical mechanical planarization (CMP) for polishing, which leads to the generation of large quantities of hazardous waste including particulate and ionic III-V debris. Although the toxic effects of micron-sized III-V materials have been studied in vivo, no comprehensive assessment has been undertaken to elucidate the hazardous effects of submicron particulates and released III-V ionic components. Since III-V materials may contribute disproportionately to the hazard of CMP slurries, we obtained GaP, InP, GaAs, and InAs as micron- (0.2-3 μm) and nanoscale (<100 nm) particles for comparative studies of their cytotoxic potential in macrophage (THP-1) and lung epithelial (BEAS-2B) cell lines. We found that nanosized III-V arsenides, including GaAs and InAs, could induce significantly more cytotoxicity over a 24-72 h observation period. In contrast, GaP and InP particulates of all sizes as well as ionic GaCl3 and InCl3 were substantially less hazardous. The principal mechanism of III-V arsenide nanoparticle toxicity is dissolution and shedding of toxic As(III) and, to a lesser extent, As(V) ions. GaAs dissolves in the cell culture medium as well as in acidifying intracellular compartments, while InAs dissolves (more slowly) inside cells. Chelation of released As by 2,3-dimercapto-1-propanesulfonic acid interfered in GaAs toxicity. Collectively, these results demonstrate that III-V arsenides, GaAs and InAs nanoparticles, contribute in a major way to the toxicity of III-V materials that could appear in slurries. This finding is of importance for considering how to deal with the hazard potential of CMP slurries.

Expert judgments about RD&D and the future of nuclear energy.

PubMed

Anadón, Laura D; Bosetti, Valentina; Bunn, Matthew; Catenacci, Michela; Lee, Audrey

2012-11-06

Probabilistic estimates of the cost and performance of future nuclear energy systems under different scenarios of government research, development, and demonstration (RD&D) spending were obtained from 30 U.S. and 30 European nuclear technology experts. We used a novel elicitation approach which combined individual and group elicitation. With no change from current RD&D funding levels, experts on average expected current (Gen. III/III+) designs to be somewhat more expensive in 2030 than they were in 2010, and they expected the next generation of designs (Gen. IV) to be more expensive still as of 2030. Projected costs of proposed small modular reactors (SMRs) were similar to those of Gen. IV systems. The experts almost unanimously recommended large increases in government support for nuclear RD&D (generally 2-3 times current spending). The majority expected that such RD&D would have only a modest effect on cost, but would improve performance in other areas, such as safety, waste management, and uranium resource utilization. The U.S. and E.U. experts were in relative agreement regarding how government RD&D funds should be allocated, placing particular focus on very high temperature reactors, sodium-cooled fast reactors, fuels and materials, and fuel cycle technologies.

Leveraging Information Technology. Track III: Organizational Issues.

ERIC Educational Resources Information Center

CAUSE, Boulder, CO.

Seven papers from the 1987 CAUSE conference's Track III, Organizational Issues, are presented. They include: "Learning Resources and Technologies: A Unified Organizational Reorientation to Administering Educational Support Services" (Morrell D. Boone); "IRM: A Short-Lived Concept?" (James I. Penrod and Michael G. Dolence);…

Ultrasonic Data Display and Analysis System Developed (Including Fuzzy Logic Analysis) for the Windows-Based PC

NASA Technical Reports Server (NTRS)

Lovelace, Jeffrey J.; Cios, Kryzsztof J.; Roth, Don J.; cAO, wEI n.

2001-01-01

Post-Scan Interactive Data Display (PSIDD) III is a user-oriented Windows-based system that facilitates the display and comparison of ultrasonic contact measurement data obtained at NASA Glenn Research Center's Ultrasonic Nondestructive Evaluation measurement facility. The system is optimized to compare ultrasonic measurements made at different locations within a material or at different stages of material degradation. PSIDD III provides complete analysis of the primary waveforms in the time and frequency domains along with the calculation of several frequency-dependent properties including phase velocity and attenuation coefficient and several frequency-independent properties, like the cross correlation velocity. The system allows image generation on all the frequency-dependent properties at any available frequency (limited by the bandwidth used in the scans) and on any of the frequency-independent properties. From ultrasonic contact scans, areas of interest on an image can be studied with regard to underlying raw waveforms and derived ultrasonic properties by simply selecting the point on the image. The system offers various modes of indepth comparison between scan points. Up to five scan points can be selected for comparative analysis at once. The system was developed with Borland Delphi software (Visual Pascal) and is based on an SQL data base. It is ideal for the classification of material properties or the location of microstructure variations in materials. Along with the ultrasonic contact measurement software that it is partnered with, this system is technology ready and can be transferred to users worldwide.

InGaAs focal plane array developments at III-V Lab

NASA Astrophysics Data System (ADS)

Rouvié, Anne; Reverchon, Jean-Luc; Huet, Odile; Djedidi, Anis; Robo, Jean-Alexandre; Truffer, Jean-Patrick; Bria, Toufiq; Pires, Mauricio; Decobert, Jean; Costard, Eric

2012-06-01

SWIR detection band benefits from natural (sun, night glow, thermal radiation) or artificial (eye safe lasers) photons sources combined to low atmospheric absorption and specific contrast compared to visible wavelengths. It gives the opportunity to address a large spectrum of applications such as defense and security (night vision, active imaging), space (earth observation), transport (automotive safety) or industry (non destructive process control). InGaAs material appears as a good candidate to satisfy SWIR detection needs. The lattice matching with InP constitutes a double advantage to this material: attractive production capacity and uncooled operation thanks to low dark current level induced by high quality material. For few years, III-VLab has been studying InGaAs imagery, gathering expertise in InGaAs material growth and imaging technology respectively from Alcatel-Lucent and Thales, its two mother companies. This work has lead to put quickly on the market a 320x256 InGaAs module, exhibiting high performances in terms of dark current, uniformity and quantum efficiency. In this paper, we present the last developments achieved in our laboratory, mainly focused on increasing the pixels number to VGA format associated to pixel pitch decrease (15μm) and broadening detection spectrum toward visible wavelengths. Depending on targeted applications, different Read Out Integrated Circuits (ROIC) have been used. Low noise ROIC have been developed by CEA LETI to fit the requirements of low light level imaging whereas logarithmic ROIC designed by NIT allows high dynamic imaging adapted for automotive safety.

TERA-MIR radiation: materials, generation, detection and applications III (Conference Presentation)

NASA Astrophysics Data System (ADS)

Pereira, Mauro F.

2016-10-01

This talk summarizes the achievements of COST ACTION MP1204 during the last four years. [M.F. Pereira, Opt Quant Electron 47, 815-820 (2015).]. TERA-MIR main objectives are to advance novel materials, concepts and device designs for generating and detecting THz and Mid Infrared radiation using semiconductor, superconductor, metamaterials and lasers and to beneficially exploit their common aspects within a synergetic approach. We used the unique networking and capacity-building capabilities provided by the COST framework to unify these two spectral domains from their common aspects of sources, detectors, materials and applications. We created a platform to investigate interdisciplinary topics in Physics, Electrical Engineering and Technology, Applied Chemistry, Materials Sciences and Biology and Radio Astronomy. The main emphasis has been on new fundamental material properties, concepts and device designs that are likely to open the way to new products or to the exploitation of new technologies in the fields of sensing, healthcare, biology, and industrial applications. End users are: research centres, academic, well-established and start-up Companies and hospitals. Results are presented along our main lines of research: Intersubband materials and devices with applications to fingerprint spectroscopy; Metamaterials, photonic crystals and new functionalities; Nonlinearities and interaction of radiation with matter including biomaterials; Generation and Detection based on Nitrides and Bismides. The talk is closed by indicating the future direction of the network that will remain active beyond the funding period and our expectations for future joint research.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, T.; Griffin, A. M.; Gorski, C. A.

Dissimilatory microbial reduction of solid-phase Fe(III)-oxides and Fe(III)-bearing phyllosilicates (Fe(III)-phyllosilicates) is an important process in anoxic soils, sediments, and subsurface materials. Although various studies have documented the relative extent of microbial reduction of single-phase Fe(III)-oxides and Fe(III)-phyllosilicates, detailed information is not available on interaction between these two processes in situations where both phases are available for microbial reduction. The goal of this research was to use the model dissimilatory iron-reducing bacterium (DIRB) Geobacter sulfurreducens to study Fe(III)-oxide vs. Fe(III)-phyllosilicate reduction in a range of subsurface materials and Fe(III)-oxide stripped versions of the materials. Low temperature (12K) Mossbauer spectroscopy was usedmore » to infer changes in the relative abundances of Fe(III)-oxide, Fe(III)-phyllosilicate, and phyllosilicate-associated Fe(II) (Fe(II)-phyllosilicate). A Fe partitioning model was employed to analyze the fate of Fe(II) and assess the potential for abiotic Fe(II)-catalyzed reduction of Fe(III)-phyllosilicates. The results showed that in most cases Fe(III)- oxide utilization dominated (70-100 %) bulk Fe(III) reduction activity, and that electron transfer from oxide-derived Fe(II) played only a minor role (ca. 10-20 %) in Fe partitioning. In addition, the extent of Fe(III)-oxide reduction was positively correlated to surface area-normalized cation exchange capacity and the phyllosilicate-Fe(III)/total Fe(III) ratio, which suggests that the phyllosilicates in the natural sediments promoted Fe(III)-oxide reduction by binding of oxide-derived Fe(II), thereby enhancing Fe(III)-oxide reduction by reducing or delaying the inhibitory effect that Fe(II) accumulation on oxide and DIRB cell surfaces has on Fe(III)-oxide reduction. In general our results suggest that although Fe(III)-oxide reduction is likely to dominate bulk Fe(III) reduction in most subsurface sediments, Fe(II) binding by phyllosilicates is likely to play a key role in controlling the long-term kinetics of Fe(III)-oxide reduction.« less

Stability assessment of the chemical composition of the treated mining water used to replenish the cooling circuit in Jaworzno III Power Plant - Power Plant II

NASA Astrophysics Data System (ADS)

Karpiński, Marcin; Kmiecik, Ewa

2017-11-01

In Poland, electricity is still produced mainly in conventional power plants where fuel and water are materials necessary to generate the electricity. Even in modern power plants operating according to the principles of the sustainable development, this involves a high intake of water and considerable production of wastewater. This, in turn, necessi-tates the application of some technological solutions aimed at limiting the negative impact on the environment. The Jaworzno III Power Plant - Power Plant II is located in Jaworzno, Silesian Province, Poland. In order to minimise the negative impact on the surface water, the plant replenishes the cooling circuit with the mining water obtained from the closed-down Jan Kanty mine. The paper presents a stability assessment of the chemical composition of the treated mining water used to replenish the cooling circuit based on the data from 2007-2017.

III-V heterostructure tunnel field-effect transistor.

PubMed

Convertino, C; Zota, C B; Schmid, H; Ionescu, A M; Moselund, K E

2018-07-04

The tunnel field-effect transistor (TFET) is regarded as one of the most promising solid-state switches to overcome the power dissipation challenge in ultra-low power integrated circuits. TFETs take advantage of quantum mechanical tunneling hence exploit a different current control mechanism compared to standard MOSFETs. In this review, we describe state-of-the-art development of TFET both in terms of performances and of materials integration and we identify the main remaining technological challenges such as heterojunction defects and oxide/channel interface traps causing trap-assisted-tunneling (TAT). Mesa-structures, planar as well as vertical geometries are examined. Conductance slope analysis on InAs/GaSb nanowire tunnel diodes are reported, these two-terminal measurements can be relevant to investigate the tunneling behavior. A special focus is dedicated to III-V heterostructure TFET, as different groups have recently shown encouraging results achieving the predicted sub-thermionic low-voltage operation.

Performance Evaluation of III-V Hetero/Homojunction Esaki Tunnel Diodes on Si and Lattice Matched Substrates

NASA Astrophysics Data System (ADS)

Thomas, Paul M.

Understanding of quantum tunneling phenomenon in semiconductor systems is increasingly important as CMOS replacement technologies are investigated. This work studies a variety of heterojunction materials and types to increase tunnel currents to CMOS competitive levels and to understand how integration onto Si substrates affects performance. Esaki tunnel diodes were grown by Molecular Beam Epitaxy (MBE) on Si substrates via a graded buffer and control Esaki tunnel diodes grown on lattice matched substrates for this work. Peak current density for each diode is extracted and benchmarked to build an empirical data set for predicting diode performance. Additionally, statistics are used as tool to show peak to valley ratio for the III-V on Si sample and the control perform similarly below a threshold area. This work has applications beyond logic, as multijunction solar cell, heterojunction bipolar transistor, and light emitting diode designs all benefit from better tunnel contact design.

Enhancing Hole Mobility in III-V Semiconductors

DTIC Science & Technology

2012-05-21

acteristics of the digital superlattice (n¼1,0, andþ 1) that was used in the metamorphic buffer. The GaSb channel peak gets buried in the n¼ 0...materials have been used for a variety of analog and high frequency applications driven by the high electron mobilities in III-V materials. On the other...hand, the hole mobility in III-V materials has always lagged compared to group-IV semiconductors such as germanium. In this paper, we explore the use

Results of the Promethee Method Application in Selecting the Technological System at the Majdan III Open Pit Mine / Wyniki Zastosowania Metody Promethee do Wyboru Systemu Technologicznego W Kopalni Odkrywkowej Majdan III

NASA Astrophysics Data System (ADS)

Vujić, Slobodan; Hudej, Marjan; Miljanović, Igor

2013-12-01

This paper discusses the application of the PROMETHEE model and the results achieved in practice, following the example of the multi-criteria selection of the technological system at the Majdan III clay mineral raw material open pit mine of the Potisje Company, Republic of Serbia. After the introduction comments, reasons are explained for selecting the new technological system, conditions and limitations for the seven alternative solutions considered are described, mathematical foundation for the PROMETHEE method and a multi-criteria model of the problem in question are presented. The solution with the following structure was ranked first and accepted by the Company management as the best: Bucket chain excavator - Conveyor belts - Spreader (ECS), alongside a decision is made on the acquisition of machinery and system construction. The system was put into operation in 2000. The experience and the data accumulated in the previous twelve years confirm that the decision made on the application of the ECS technology was just, and the conclusion lists the benefits achieved. W artykule omówiono zastosowanie modelu Promethee i przedyskutowano uzyskane w ten sposób wyniki na przykładzie wielokryterialnego wyboru systemu technologicznego do zastosowania w kopalni odkrywkowej minerałów ilastych Majdan III, należącej do przedsiębiorstwa górniczego Potisje (Republika Serbii). Po uwagach wprowadzających przedstawiono powody wyboru nowego ciągu technologicznego, omówiono warunki oraz ograniczenia dla siedmiu alternatywnych rozwiązań, podstawy matematyczne metody Promethee oraz wielokryterialny model zagadnienia. Rozwiązanie uznane za najlepsze i zaaprobowane przez zarząd przedsiębiorstwa zakłada zastosowanie następującego ciągu technologicznego: koparka łancuchowa jednonaczyniowa - przenośniki taśmowe - rozkładarka(system ECS). Podjęto także decyzje odnośnie zakupu sprzętu i instalacji systemu, który uruchomiony został w 2000 roku. Doświadczenia i danezebrane z przeciągu ostatnich dwunastu lat potwierdzają zasadność wyboru systemu technologicznego. W podsumowaniu zestawiono listę uzyskanych korzyści

Extra-terrestrial construction processes - Advancements, opportunities and challenges

NASA Astrophysics Data System (ADS)

Lim, Sungwoo; Prabhu, Vibha Levin; Anand, Mahesh; Taylor, Lawrence A.

2017-10-01

Government space agencies, including NASA and ESA, are conducting preliminary studies on building alternative space-habitat systems for deep-space exploration. Such studies include development of advanced technologies for planetary surface exploration, including an in-depth understanding of the use of local resources. Currently, NASA plans to land humans on Mars in the 2030s. Similarly, other space agencies from Europe (ESA), Canada (CSA), Russia (Roscosmos), India (ISRO), Japan (JAXA) and China (CNSA) have already initiated or announced their plans for launching a series of lunar missions over the next decade, ranging from orbiters, landers and rovers for extended stays on the lunar surface. As the Space Odyssey is one of humanity's oldest dreams, there has been a series of research works for establishing temporary or permanent settlement on other planetary bodies, including the Moon and Mars. This paper reviews current projects developing extra-terrestrial construction, broadly categorised as: (i) ISRU-based construction materials; (ii) fabrication methods; and (iii) construction processes. It also discusses four categories of challenges to developing an appropriate construction process: (i) lunar simulants; (ii) material fabrication and curing; (iii) microwave-sintering based fabrication; and (iv) fully autonomous and scaled-up construction processes.

Seebeck Coefficient Measurements on Micron-Size Single-Crystal Zinc Germanium Nitride Rods

NASA Astrophysics Data System (ADS)

Dyck, J. S.; Colvin, J. R.; Quayle, P. C.; Peshek, T. J.; Kash, K.

2016-06-01

II-IV-nitride compounds are tetrahedrally bonded, heterovalent ternary semiconductors that have recently garnered attention for their potential technological applications. These materials are derived from the parent III-nitride compounds; ZnGeN2 is the II-IV-nitride analogue to the III-nitride GaN. Very little is known about the transport properties of ZnGeN2. In this work, we present Seebeck coefficient ( S) data on 3-micron-diameter, 70-micron-long, single-crystal ZnGeN2 rods, employing a novel measurement approach. The measurements of S show that the majority free carriers are electrons, and imply that the carrier gas is degenerate. Within a single-band model for the conduction band, a carrier concentration of order 1019 cm-3 was estimated for a measured S = -90 μV/K. Together with electrical transport measurements, a lower limit for the electron mobility is estimated to be ˜20 cm2/V-s. A discussion of this material as a thermoelectric is presented. The background level of free electrons in this unintentionally doped ZnGeN2 is very near the predicted optimum value for maximum thermoelectric performance.

(abstract) A Mobile Robot for Remote Response to Incidents Involving Hazardous Materials

NASA Technical Reports Server (NTRS)

Welch, Richard V.

1994-01-01

This paper will report the status of the Emergency Response Robotics project, a teleoperated mobile robot system being developed at JPL for use by the JPL Fire Department/HAZMAT Team. The project, which began in 1991, has been focused on developing a robotic vehicle which can be quickly deployed by HAZMAT Team personnel for first entry into an incident site. The primary goals of the system are to gain access to the site, locate and identify the hazard, and aid in its mitigation. The involvement of JPL Fire Department/HAZMAT Team personnel has been critical in guiding the design and evaluation of the system. A unique feature of the current robot, called HAZBOT III, is its special design for operation in combustible environments. This includes the use of all solid state electronics, brushless motors, and internal pressurization. Demonstration and testing of the system with HAZMAT Team personnel has shown that teleoperated robots, such as HAZBOT III, can successfully gain access to incident sites locating and identifying hazardous material spills. Work is continuing to enable more complex missions through the addition of appropriate sensor technology and enhancement of the operator interface.

A color-tunable luminescent material with functionalized graphitic carbon nitride as multifunctional supports

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Jiutian; Cao, Yudong; Fan, Hai

2015-12-15

A color-tunable luminescent material was prepared based on the composition of functionalized graphitic carbon nitride (g-C{sub 3}N{sub 4}) and europium (III). The functionalized g-C{sub 3}N{sub 4} layers not only behave as multifunctional supports including ligand coordinated with europium (III) and a support structure for the formation of the luminescent material, but exhibit excitation wavelength-dependent luminescence, thus the energy transfer between the functionalized g-C{sub 3}N{sub 4} and europium (III) can match very well by controlling the emission wavelength of functionalized g-C{sub 3}N{sub 4}. The as-prepared materials was comprehensively characterized via X-ray photoelectron spectroscopy, Fourier Transform Infrared spectroscopy, X-ray scattering techniques, Ultravioletmore » and Visible spectrophotometer, fluorescence spectrophotometer, thermogravimetric analysis, etc. The luminescent material exhibits multi-color emissions which are consistent with the characteristic emissions of europium (III) and functionalized g-C{sub 3}N{sub 4}, and the photoluminescence quality and density of the europium (III) can be greatly enhanced. The brilliant optical properties of the materials make them suiting for multipurpose applications in practical fields. - Graphical abstract: Schematic illustration of the synthesis and basic composition of the luminescent material. Inset figures were luminescence emission spectra of g-C{sub 3}N{sub 4} (A), europium (III) complex (a) and luminescent material (b) with the same concentration in (B) (K{sub ex}=350 nm) and photographs of (left) H{sub 2}O and (right) the H{sub 2}O dispersion of luminescence emission spectra under 350 nm UV radiation. The energy transfer in the luminescent material matchs very well and it exhibits multi-color emissions simultaneously. The enhanced photoluminescence quality and density of the europium (III) makes them suiting for multipurpose applications in practical fields. - Highlights: • Luminescent material exhibits multi-color emissions when excited by single wavelength. • The energy trsnsfer between functionalized g-C{sub 3}N{sub 4} and europium matches very vell. • Functionalized g-C{sub 3}N{sub 4} exhibits excitation wavelength-depengdent bright blue luminescence. • Functionalized g-C{sub 3}N{sub 4} layer provided as multifunctional supports.« less

Biological and environmental interactions of emerging two-dimensional nanomaterials

PubMed Central

Wang, Zhongying; Zhu, Wenpeng; Qiu, Yang; Yi, Xin; von dem Bussche, Annette; Kane, Agnes; Gao, Huajian; Koski, Kristie; Hurt, Robert

2016-01-01

Two-dimensional materials have become a major focus in materials chemistry research worldwide with substantial efforts centered on synthesis, property characterization, and technological application. These high-aspect ratio sheet-like solids come in a wide array of chemical compositions, crystal phases, and physical forms, and are anticipated to enable a host of future technologies in areas that include electronics, sensors, coatings, barriers, energy storage and conversion, and biomedicine. A parallel effort has begun to understand the biological and environmental interactions of synthetic nanosheets, both to enable the biomedical developments and to ensure human health and safety for all application fields. This review covers the most recent literature on the biological responses to 2D materials and also draws from older literature on natural lamellar minerals to provide additional insight into the essential chemical behaviors. The article proposes a framework for more systematic investigation of biological behavior in the future, rooted in fundamental materials chemistry and physics. That framework considers three fundamental interaction modes: (i) chemical interactions and phase transformations, (ii) electronic and surface redox interactions, and (iii) physical and mechanical interactions that are unique to near-atomically-thin, high-aspect-ratio solids. Two-dimensional materials are shown to exhibit a wide range of behaviors, which reflect the diversity in their chemical compositions, and many are expected to undergo reactive dissolution processes that will be key to understanding their behaviors and interpreting biological response data. The review concludes with a series of recommendations for high-priority research subtopics at the “bio-nanosheet” interface that we hope will enable safe and successful development of technologies related to two-dimensional nanomaterials. PMID:26923057

SENER molten salt tower technology. Ouarzazate NOOR III case

NASA Astrophysics Data System (ADS)

Relloso, Sergio; Gutiérrez, Yolanda

2017-06-01

NOOR III 150 MWe project is the evolution of Gemasolar (19.9 MWe) to large scale Molten Salt Tower plants. With more than 5 years of operational experience, Gemasolar lessons learned have been the starting point for the optimization of this technology, considered the leader of potential cost reduction in CSP. In addition, prototypes of plant key components (heliostat and receiver) were manufactured and thoroughly tested before project launch in order to prove the new engineering solutions adopted. The SENER proprietary technology of NOOR III will be applied in the next Molten Salt Tower plants that will follow in other countries, such as South Africa, Chile and Australia.

PREFACE: Symposium 1: Advanced Structure Analysis and Characterization of Ceramic Materials

NASA Astrophysics Data System (ADS)

Yashima, Masatomo

2011-05-01

Preface to Symposium 1 (Advanced Structure Analysis and Characterization of Ceramic Materials) of the International Congress of Ceramics III, held 14-18 November 2010 in Osaka, Japan Remarkable developments have been made recently in the structural analysis and characterization of inorganic crystalline and amorphous materials, such as x-ray, neutron, synchrotron and electron diffraction, x-ray/neutron scattering, IR/Raman scattering, NMR, XAFS, first-principle calculations, computer simulations, Rietveld analysis, the maximum-entropy method, in situ measurements at high temperatures/pressures and electron/nuclear density analysis. These techniques enable scientists to study not only static and long-range periodic structures but also dynamic and short-/intermediate-range structures. Multi-scale characterization from the electron to micrometer levels is becoming increasingly important as a means of understanding phenomena at the interfaces, grain boundaries and surfaces of ceramic materials. This symposium has discussed the structures and structure/property relationships of various ceramic materials (electro, magnetic and optical ceramics; energy and environment related ceramics; bio-ceramics; ceramics for reliability secure society; traditional ceramics) through 38 oral presentations including 8 invited lectures and 49 posters. Best poster awards were given to six excellent poster presentations (Y-C Chen, Tokyo Institute of Technology; C-Y Chung, Tohoku University; T Stawski, University of Twente; Y Hirano, Nagoya Institute of Technology; B Bittova, Charles University Prague; Y Onodera, Kyoto University). I have enjoyed working with my friends in the ICC3 conference. I would like to express special thanks to other organizers: Professor Scott T Misture, Alfred University, USA, Professor Xiaolong Chen, Institute of Physics, CAS, China, Professor Takashi Ida, Nagoya Institute of Technology, Japan, Professor Isao Tanaka, Kyoto University, Japan. I also acknowledge the invited speakers, all the participants and organizing committee of the ICC3. I am pleased to publish the Proceedings of the Symposium 1 of ICC3. I hope that the papers contained in these Proceedings will prove helpful to Professors, researchers and students in improving the fields of Structure Analysis and Characterization of Ceramic Materials. Masatomo Yashima April 2011 Department of Chemistry and Materials Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, Japan

10 CFR 76.117 - Special nuclear material of low strategic significance-Category III.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 10 Energy 2 2013-01-01 2013-01-01 false Special nuclear material of low strategic significance-Category III. 76.117 Section 76.117 Energy NUCLEAR REGULATORY COMMISSION (CONTINUED) CERTIFICATION OF GASEOUS DIFFUSION PLANTS Safeguards and Security § 76.117 Special nuclear material of low strategic...

10 CFR 76.117 - Special nuclear material of low strategic significance-Category III.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 10 Energy 2 2011-01-01 2011-01-01 false Special nuclear material of low strategic significance-Category III. 76.117 Section 76.117 Energy NUCLEAR REGULATORY COMMISSION (CONTINUED) CERTIFICATION OF GASEOUS DIFFUSION PLANTS Safeguards and Security § 76.117 Special nuclear material of low strategic...

10 CFR 76.117 - Special nuclear material of low strategic significance-Category III.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 10 Energy 2 2014-01-01 2014-01-01 false Special nuclear material of low strategic significance-Category III. 76.117 Section 76.117 Energy NUCLEAR REGULATORY COMMISSION (CONTINUED) CERTIFICATION OF GASEOUS DIFFUSION PLANTS Safeguards and Security § 76.117 Special nuclear material of low strategic...

10 CFR 76.117 - Special nuclear material of low strategic significance-Category III.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 10 Energy 2 2012-01-01 2012-01-01 false Special nuclear material of low strategic significance-Category III. 76.117 Section 76.117 Energy NUCLEAR REGULATORY COMMISSION (CONTINUED) CERTIFICATION OF GASEOUS DIFFUSION PLANTS Safeguards and Security § 76.117 Special nuclear material of low strategic...

10 CFR 76.117 - Special nuclear material of low strategic significance-Category III.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 10 Energy 2 2010-01-01 2010-01-01 false Special nuclear material of low strategic significance-Category III. 76.117 Section 76.117 Energy NUCLEAR REGULATORY COMMISSION (CONTINUED) CERTIFICATION OF GASEOUS DIFFUSION PLANTS Safeguards and Security § 76.117 Special nuclear material of low strategic...

Imprinted magnetic graphene oxide for the mini-solid phase extraction of Eu (III) from coal mine area

NASA Astrophysics Data System (ADS)

Patra, Santanu; Roy, Ekta; Madhuri, Rashmi; Sharma, Prashant K.

2017-05-01

The present work represents the preparation of imprinted magnetic reduced graphene oxide and applied it for the selective removal of Eu (III) from local coal mines area. A simple solid phase extraction method was used for this purpose. The material shows a very high adsorption as well as removal efficiency towards Eu (III), which suggest that the material have potential to be used in future for their real time applications in removal of Eu (III) from complex matrices.

Using environmental chemistry technologies for the removal of arsenic from drinking water, and fat and oil based phase change materials for thermal energy storage

NASA Astrophysics Data System (ADS)

Sutterlin, William R.

The first four chapters of this dissertation involve the removal of arsenic from drinking water. Various forms of a macroporous char prepared by partial gasification of subbituminous coal were studied for removal of arsenic(V) and arsenic(III) from water. In increasing order of effectiveness for arsenic(V) removal were untreated char < acid-washed char < char impregnated with iron(III) and gasified < char impregnated with FeS < char impregnated with iron(III) hydroxide < char coated with zerovalent iron < char impregnated with iron(III) oxide. A mass of 10 g of iron(III) oxide char removed arsenic(V) and arsenic(III) from 10,000 mL of water containing 500 micrograms/L of arsenic to levels below 10 micrograms/L. The capacity of the solid to remove arsenic was significantly diminished in water containing 4 mg/L of phosphate. An electrical current passed over 4 g of iron(III) oxide char in a column enabled removal of arsenic(III) from 14,000 mL of 500 micrograms/L arsenic(III) to below 10 micrograms/liter and at significantly higher flow rates than could be employed without electrolysis. The fifth chapter in this dissertation focused on the retention of organics onto a char/concrete pellet. A mixture of naphthalene, pentachlorophenol, biphenyl, toluene, tetrachloroethane, and chlorobenzene were impregnated into a loose granular char, a char/concrete pellet and a sand/concrete pellet. The results showed that the char/concrete pellet had significant advantages over the other forms. Chapters 6--9 focus on phase change materials (PCMs). These PCMs are made from fats and oils. PCMs are perhaps the only proven method that can provide near 100% thermal energy storage. In chapter 7 a novel HPLC method was developed that could provide quantification and qualification of the resulting products formed after PCM synthesis. In chapter 8 thermal cycling studies were conducted on the fat and oil based PCMs. These thermal cycle demonstrated that these PCMs were capable of going through a multitude of freeze and melt processes with little to no degradation if the appropriate preservative is used. Finally in chapter 9 the PCM is incorporated into a simulated 100 th scale house. A traditional freon based evaporator is used to freeze the PCM at night during electrical-off-peak hours. During the peak-load of the day the evaporator is turned off and the PCM provides the cooling for the house.

49 CFR 173.213 - Non-bulk packagings for solid hazardous materials in Packing Group III.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 2 2010-10-01 2010-10-01 false Non-bulk packagings for solid hazardous materials... Hazardous Materials Other Than Class 1 and Class 7 § 173.213 Non-bulk packagings for solid hazardous materials in Packing Group III. (a) When § 172.101 of this subchapter specifies that a solid hazardous...

49 CFR 173.213 - Non-bulk packagings for solid hazardous materials in Packing Group III.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 49 Transportation 2 2011-10-01 2011-10-01 false Non-bulk packagings for solid hazardous materials... Hazardous Materials Other Than Class 1 and Class 7 § 173.213 Non-bulk packagings for solid hazardous materials in Packing Group III. (a) When § 172.101 of this subchapter specifies that a solid hazardous...

Recycled-tire pyrolytic carbon made functional: A high-arsenite [As(III)] uptake material PyrC350®.

PubMed

Mouzourakis, E; Georgiou, Y; Louloudi, M; Konstantinou, I; Deligiannakis, Y

2017-03-15

A novel material, PyrC 350 ® , has been developed from pyrolytic-tire char (PyrC), as an efficient low-cost Arsenite [As(III)] adsorbent from water. PyrC 350 ® achieves 31mgg -1 As(III) uptake, that remains unaltered at pH=4-8.5. A theoretical Surface Complexation Model has been developed that explains the adsorption mechanism, showing that in situ formed Fe 3 C, ZnS particles act cooperatively with the carbon matrix for As(III) adsorption. Addressing the key-issue of cost-effectiveness, we provide a comparison of As(III)-uptake effectiveness in conjunction with a cost analysis, showing that PyrC 350 ® stands in the top of [effectiveness/cost] vs. existing carbon-based, low-cost materials. Copyright © 2016 Elsevier B.V. All rights reserved.

InAs/GaInSb strained layer superlattice as an infrared detector material: an overview

NASA Astrophysics Data System (ADS)

Johnson, Jeffrey L.

2000-04-01

The investigation of the InAs/Ga1-xInxSb strained layer superlattice (SLS) has been largely motivated by the promise of overcoming limitations of current mature high-performance IR detectors, such as those using HgCdTe and extrinsic silicon. It also offers fundamentally superior performance over other newly emerging III-V bandgap- engineered materials such as QWIPs. The inherent properties of the InAs/GaInSb SLS have identified it as an attractive alternative for niche VLWIR applications requiring high performance under low backgrounds at operating temperatures > 40K. If this material system proves to meet the stringent demands of VLWIR applications, it will most certainly play a significant role as an alternative materials for photovoltaic focal pane arrays operating in the LWIR and MWIR regimes as well. This paper is an overview of SLS technology development, and focuses on critical development needs as seen from the perspective of the IR detector industry.

Impurity-induced disorder in III-nitride materials and devices

DOEpatents

Wierer, Jr., Jonathan J; Allerman, Andrew A

2014-11-25

A method for impurity-induced disordering in III-nitride materials comprises growing a III-nitride heterostructure at a growth temperature and doping the heterostructure layers with a dopant during or after the growth of the heterostructure and post-growth annealing of the heterostructure. The post-growth annealing temperature can be sufficiently high to induce disorder of the heterostructure layer interfaces.

Space Technology: Propulsion, Control and Guidance of Space Vehicles. Aerospace Education III. Instructional Unit II.

ERIC Educational Resources Information Center

Air Univ., Maxwell AFB, AL. Junior Reserve Office Training Corps.

This curriculum guide is prepared for the Aerospace Education III series publication entitled "Space Technology: Propulsion, Control and Guidance of Space Vehicles." It provides guidelines for each chapter. The guide includes objectives, behavioral objectives, suggested outline, orientation, suggested key points, suggestions for…

75 FR 27538 - Submission for OMB Review; Comment Request

Federal Register 2010, 2011, 2012, 2013, 2014

2010-05-17

... Paperwork Reduction Act (44 U.S.C. Chapter 35). Agency: Green Technology Pilot Program. Form Number(s): PTO... Examination Pilot Program for Green Technologies, (ii) the public may protest a pending application, and (iii...'s Obligation: Required to obtain or retain benefits. OMB Desk Officer: Nicholas A. Fraser, e-mail...

Fibrous materials on polyhydroxybutyrate and ferric iron (III)-based porphyrins basis: physical-chemical and antibacterial properties

NASA Astrophysics Data System (ADS)

Olkhov, A.; Lobanov, A.; Staroverova, O.; Tyubaeva, P.; Zykova, A.; Pantyukhov, P.; Popov, A.; Iordanskii, A.

2017-02-01

Ferric iron (III)-based complexes with porphyrins are the homogenous catalysts of auto-oxidation of several biogenic substances. The most perspective carrier for functional low-molecular substances is the polymer fibers with nano-dimensional parameters. Application of natural polymers, poly-(3-hydroxybutyrate) or polylactic acid for instance, makes possible to develop fiber and matrice systems to solve ecological problem in biomedicine The aim of the article is to obtain fibrous material on poly-(3-hydroxybutyrate) and ferric iron (III)-based porphyrins basis and to examine its physical-chemical and antibacterial properties. The work is focused on possibility to apply such material to biomedical purposes. Microphotographs of obtained material showed that addition of 1% wt. ferric iron (III)-based porphyrins to PHB led to increased average diameter and disappeared spindly structures in comparison with initial PHB. Biological tests of nonwoven fabrics showed that fibers, containing ferric iron (III)-based tetraphenylporphyrins, were active in relation to bacterial test-cultures. It was found that materials on polymer and metal complexes with porphyrins basis can be applied to production of decontamination equipment in relation to pathogenic and opportunistic microorganisms.

Application of Mobility Spectrum Analysis to Modern Multi-layered IR Device Material

NASA Astrophysics Data System (ADS)

Brown, Alexander Earl

Modern detector materials used for infrared (IR) imaging purposes contain complex multi-layered architectures, making more robust characterization techniques necessary. In order to determine mutli-carrier transport properties in the presence of mixed conduction, variable-field Hall characterization can be performed and then analyzed using mobility spectrum analysis to extract parameters of interest. Transport parameters are expected to aid in modeling and simulation of materials and can be used in optimization of particular problem areas. The performances of infrared devices ultimately depend on transport mechanisms, so an accurate determination becomes paramount. This work focuses on the characterization of two materials at the forefront of IR detectors; incumbent, tried and true, HgCdTe technologies and emergent III-V based superlattice structures holding much promise for future detector purposes. Ex-situ doped long-wave planar devices and in-situ doped mid-wave dual-layer heterojunctions (P+/n architecture) HgCdTe structures are explored with regards to substrate choice, namely lattice-matched CdZnTe and lattice-mismatched Si or GaAs. A detailed study of scattering mechanisms reveal that growth on lattice-mismatched substrates leads to dislocation scattering limited mobility at low temperature, correlating with extrinsically limited minority carrier lifetime and excesses diode tunneling current, resulting in overall lower performance. Mobility spectrum analysis proves to be an effective diagnostic on performance as well as providing insight in surface, substrate-interface, and minority carrier transport. Two main issues limiting performance of III-V based superlattices are addressed; high residual doping backgrounds and surface passivation. Mobility spectrum analysis proves to be a reliable method of determining background doping levels. Modest improvements are obtained via post-growth thermal annealing, but results suggest future efforts should be placed upon growth improvements. Passivation efforts using charged electret dielectric show promise but further refinements would be needed. Thiol passivation is identified as a successful passivant of Be-doped p-type InAs/GaSb long-wave absorbers using mobility spectrum analysis, correlating with fabricated device dark current. Mobility spectrum analysis demonstrates it will be indispensable in future development of III-V material.

Kinetics of sorption and abiotic oxidation of arsenic(III) by aquifer materials

USGS Publications Warehouse

Amirbahman, A.; Kent, D.B.; Curtis, G.P.; Davis, J.A.

2006-01-01

The fate of arsenic in groundwater depends largely on its interaction with mineral surfaces. We investigated the kinetics of As(III) oxidation by aquifer materials collected from the USGS research site at Cape Cod, MA, USA, by conducting laboratory experiments. Five different solid samples with similar specific surface areas (0.6-0.9 m2 g-1) and reductively extractable iron contents (18-26 ??mol m-2), but with varying total manganese contents (0.5-3.5 ??mol m-2) were used. Both dissolved and adsorbed As(III) and As(V) concentrations were measured with time up to 250 h. The As(III) removal rate from solution increased with increasing solid manganese content, suggesting that manganese oxide is responsible for the oxidation of As(III). Under all conditions, dissolved As(V) concentrations were very low. A quantitative model was developed to simulate the extent and kinetics of arsenic transformation by aquifer materials. The model included: (1) reversible rate-limited adsorption of As(III) onto both oxidative and non-oxidative (adsorptive) sites, (2) irreversible rate-limited oxidation of As(III), and (3) equilibrium adsorption of As(V) onto adsorptive sites. Rate constants for these processes, as well as the total oxidative site densities were used as the fitting parameters. The total adsorptive site densities were estimated based on the measured specific surface area of each material. The best fit was provided by considering one fast and one slow site for each adsorptive and oxidative site. The fitting parameters were obtained using the kinetic data for the most reactive aquifer material at different initial As(III) concentrations. Using the same parameters to simulate As(III) and As(V) surface reactions, the model predictions were compared to observations for aquifer materials with different manganese contents. The model simulated the experimental data very well for all materials at all initial As(III) concentrations. The As(V) production rate was related to the concentrations of the free oxidative surface sites and dissolved As(III), as r As(V) = k???ox [Mn(IV) OH3][AsO3] with apparent second-order rate constants of koxf??? = 6.28 ?? 10-1 and koxs??? = 1.25 ?? 10-2 M-1 s-1 for the fast and the slow oxidative sites, respectively. The As(III) removal rate decreased approximately by half for a pH increase from 4 to 7. The pH dependence was explained using the acid-base behavior of the surface oxidative sites by considering a surface pKa = 6.2 (I = 0). In the presence of excess surface adsorptive and oxidative sites, phosphate diminished the rate of As(III) removal and As(V) production only slightly due to its interaction with the oxidative sites. The observed As(III) oxidation rate here is consistent with previous observations of As(III) oxidation over short transport distances during field-scale transport experiments. The model developed here may be incorporated into groundwater transport models to predict arsenic speciation and transport in chemically heterogeneous systems. ?? 2005 Elsevier Inc. All rights reserved.

JHR Project: a future Material Testing Reactor working as an International user Facility: The key-role of instrumentation in support to the development of modern experimental capacity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bignan, G.; Gonnier, C.; Lyoussi, A.

2015-07-01

Research and development on fuel and material behaviour under irradiation is a key issue for sustainable nuclear energy in order to meet specific needs by keeping the best level of safety. These needs mainly deal with a constant improvement of performances and safety in order to optimize the fuel cycle and hence to reach nuclear energy sustainable objectives. A sustainable nuclear energy requires a high level of performances in order to meet specific needs such as: - Pursuing improvement of the performances and safety of present and coming water cooled reactor technologies. This will require a continuous R and Dmore » support following a long-term trend driven by the plant life management, safety demonstration, flexibility and economics improvement. Experimental irradiations of structure materials are necessary to anticipate these material behaviours and will contribute to their optimisation. - Upgrading continuously nuclear fuel technology in present and future nuclear power plants to achieve better performances and to optimise the fuel cycle keeping the best level of safety. Fuel evolution for generation II, III and III+ is a key stake requiring developments, qualification tests and safety experiments to ensure the competitiveness and safety: experimental tests exploring the full range of fuel behaviour determine fuel stability limits and safety margins, as a major input for the fuel reliability analysis. To perform such accurate and innovative progress and developments, specific and ad hoc instrumentation, irradiation devices, measurement methods are necessary to be set up inside or beside the material testing reactor (MTR) core. These experiments require beforehand in situ and on line sophisticated measurements to accurately determine different key parameters such as thermal and fast neutron fluxes and nuclear heating in order to precisely monitor and control the conducted assays. The new Material Testing Reactor JHR (Jules Horowitz Reactor) currently under construction at CEA Cadarache research centre in the south of France will represent a major Research Infrastructure for scientific studies regarding material and fuel behavior under irradiation. It will also be devoted to medical isotopes production. Hence JHR will offer a real opportunity to perform R and D programs regarding needs above and hence will crucially contribute to the selection, optimization and qualification of these innovative materials and fuels. The JHR reactor objectives, principles and main characteristics associated to specific experimental devices associated to measurement techniques and methodology, their performances, their limitations and field of applications will be presented and discussed. (authors)« less

III-nitride integration on ferroelectric materials of lithium niobate by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Namkoong, Gon; Lee, Kyoung-Keun; Madison, Shannon M.; Henderson, Walter; Ralph, Stephen E.; Doolittle, W. Alan

2005-10-01

Integration of III-nitride electrical devices on the ferroelectric material lithium niobate (LiNbO3) has been demonstrated. As a ferroelectric material, lithium niobate has a polarization which may provide excellent control of the polarity of III-nitrides. However, while high temperature, 1000°C, thermal treatments produce atomically smooth surfaces, improving adhesion of GaN epitaxial layers on lithium niobate, repolarization of the substrate in local domains occurs. These effects result in multi domains of mixed polarization in LiNbO3, producing inversion domains in subsequent GaN epilayers. However, it is found that AlN buffer layers suppress inversion domains of III-nitrides. Therefore, two-dimensional electron gases in AlGaN /GaN heterojunction structures are obtained. Herein, the demonstration of the monolithic integration of high power devices with ferroelectric materials presents possibilities to control LiNbO3 modulators on compact optoelectronic/electronic chips.

Lyotropic Liquid Crystal Phases from Anisotropic Nanomaterials

PubMed Central

Dierking, Ingo

2017-01-01

Liquid crystals are an integral part of a mature display technology, also establishing themselves in other applications, such as spatial light modulators, telecommunication technology, photonics, or sensors, just to name a few of the non-display applications. In recent years, there has been an increasing trend to add various nanomaterials to liquid crystals, which is motivated by several aspects of materials development. (i) addition of nanomaterials can change and thus tune the properties of the liquid crystal; (ii) novel functionalities can be added to the liquid crystal; and (iii) the self-organization of the liquid crystalline state can be exploited to template ordered structures or to transfer order onto dispersed nanomaterials. Much of the research effort has been concentrated on thermotropic systems, which change order as a function of temperature. Here we review the other side of the medal, the formation and properties of ordered, anisotropic fluid phases, liquid crystals, by addition of shape-anisotropic nanomaterials to isotropic liquids. Several classes of materials will be discussed, inorganic and mineral liquid crystals, viruses, nanotubes and nanorods, as well as graphene oxide. PMID:28974025

Theoretical discovery of stable structures of group III-V monolayers: The materials for semiconductor devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suzuki, Tatsuo, E-mail: dr.tatsuosuzuki@gmail.com

Group III-V compounds are very important as the materials of semiconductor devices. Stable structures of the monolayers of group III-V binary compounds have been discovered by using first-principles calculations. The primitive unit cell of the discovered structures is a rectangle, which includes four group-III atoms and four group-V atoms. A group-III atom and its three nearest-neighbor group-V atoms are placed on the same plane; however, these connections are not the sp{sup 2} hybridization. The bond angles around the group-V atoms are less than the bond angle of sp{sup 3} hybridization. The discovered structure of GaP is an indirect transition semiconductor,more » while the discovered structures of GaAs, InP, and InAs are direct transition semiconductors. Therefore, the discovered structures of these compounds have the potential of the materials for semiconductor devices, for example, water splitting photocatalysts. The discovered structures may become the most stable structures of monolayers which consist of other materials.« less

Composites for Exploration Upper Stage

NASA Technical Reports Server (NTRS)

Fikes, J. C.; Jackson, J. R.; Richardson, S. W.; Thomas, A. D.; Mann, T. O.; Miller, S. G.

2016-01-01

The Composites for Exploration Upper Stage (CEUS) was a 3-year, level III project within the Technology Demonstration Missions program of the NASA Space Technology Mission Directorate. Studies have shown that composites provide important programmatic enhancements, including reduced weight to increase capability and accelerated expansion of exploration and science mission objectives. The CEUS project was focused on technologies that best advanced innovation, infusion, and broad applications for the inclusion of composites on future large human-rated launch vehicles and spacecraft. The benefits included near- and far-term opportunities for infusion (NASA, industry/commercial, Department of Defense), demonstrated critical technologies and technically implementable evolvable innovations, and sustained Agency experience. The initial scope of the project was to advance technologies for large composite structures applicable to the Space Launch System (SLS) Exploration Upper Stage (EUS) by focusing on the affordability and technical performance of the EUS forward and aft skirts. The project was tasked to develop and demonstrate critical composite technologies with a focus on full-scale materials, design, manufacturing, and test using NASA in-house capabilities. This would have demonstrated a major advancement in confidence and matured the large-scale composite technology to a Technology Readiness Level 6. This project would, therefore, have bridged the gap for providing composite application to SLS upgrades, enabling future exploration missions.

Application of NIR hyperspectral imaging for post-consumer polyolefins recycling

NASA Astrophysics Data System (ADS)

Serranti, Silvia; Gargiulo, Aldo; Bonifazi, Giuseppe

2012-06-01

An efficient large-scale recycling approach of particulate solid wastes is always accomplished according to the quality of the materials fed to the recycling plant and/or to any possible continuous and reliable control of the different streams inside the processing plants. Processing technologies addressed to recover plastics need to be extremely powerful, since they must be relatively simple to be cost-effective, but also accurate enough to create high-purity products and able to valorize a substantial fraction of the plastic waste materials into useful products of consistent quality in order to be economical. On the other hand, the potential market for such technologies is large and the boost of environmental regulations, and the oil price increase, has made many industries interested both in "general purpose" waste sorting technologies, as well as in developing more specialized sensing devices and/or inspection logics for a better quality assessment of plastic products. In this perspective recycling strategies have to be developed taking into account some specific aspects as i) mixtures complexity: the valuable material has to be extracted from the residue, ii) overall production: the profitability of plastic can be achieved only with mass production and iii) costs: low-cost sorting processes are required. In this paper new analytical strategies, based on hyperspectral imaging in the near infrared field (1000-1700 nm), have been investigated and set up in order to define sorting and/or quality control logics that could be profitably applied, at industrial plant level, for polyolefins recycling.

Pushing x-ray photon correlation spectroscopy beyond the continuous frame rate limit

DOE PAGES

Dufresne, Eric M.; Narayanan, Suresh; Sandy, Alec R.; ...

2016-01-06

We demonstrate delayed-frame X-ray Photon Correlation Spectroscopy with 120 microsecond time resolution, limited only by sample scattering rates, with a prototype Pixel-array detector capable of taking two image frames separated by 153 ns or less. Although the overall frame rate is currently limited to about 4 frame pairs per second, we easily measured millisecond correlation functions. In conclusion, this technology, coupled to the use of brighter synchrotrons such as Petra III or the NSLS-II should enable X-ray Photon Correlation Spectroscopy on microsecond time scales on a wider variety of materials.

Future opportunities in nanophotonics

NASA Astrophysics Data System (ADS)

Prasad, Paras N.

2003-11-01

Nanophotonics, dealing with optical science and technology at nanoscale, is an exciting new frontier, which provides numerous opportunities both for fundamental research and new applications of photonics. The Institute for Lasers, Photonics and Biophotonics at Buffalo has a comprehensive multidisciplinary program in Nanophotonics funded by the United States Department of Defense. This program focuses on three major areas of Nanophotonics: (i) interactions involving nanoscale confined radiation, (ii) use of nanoscale photoexcitation for nanofabrication and (iii) design and control of excitation dynamics in nanostructured optical materials. Selected examples of our accomplishments in nanophotonics are presented here which illustrate some of the opportunities.

Hybrid Integrated Platforms for Silicon Photonics

PubMed Central

Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

2010-01-01

A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

Manufacturing Technology for Apparel Automation. Phase 1, 2 and 3 Activity.

DTIC Science & Technology

1987-10-15

A189 129 MANUFACTURING TECHNOLOGY FOR APPAREL AUTOMATION PHASE I t/l 2 AND I ACTIVITY(U) NORTH CAROLINA STATE UNIV ATRALEIGH SCHOOL OF TEXTILES E M...34III 1.8 - iai T ON HART St 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 MTC FILE coax Report: NCSU/DLA-87/2 CDRL A004 MANUFACTURING TECHNOLOGY FOR APPAREL...I Report: NCSU/DLA-87/2 CDRL A004 MANUFACTURING TECHNOLOGY FOR APPAREL AUTOMATION Phase I, II and III Activity Edwin M. McPherson North Carolina

A Survey of the Rapidly Emerging Field of Nanotechnology: Potential Applications for Scientific Instruments and Technologies for Atmospheric Entry Probes

NASA Technical Reports Server (NTRS)

Meyyappan, M.; Arnold, J. O.

2005-01-01

The field of Nanotechnology is well funded worldwide and innovations applicable to Solar System Exploration are emerging much more rapidly than thought possible just a few years ago. This presentation will survey recent innovations from nanotechnololgy with a focus on novel applications to atmospheric entry science and probe technology, in a fashion similar to that presented by Arnold and Venkatapathy at the previous workshop forum at Lisbon Portugal, October 6-9, 2003. Nanotechnology is a rapidly emerging field that builds systems, devices and materials from the bottom up, atom by atom, and in so doing provides them with novel and remarkable macro-scale performance. This technology has the potential to revolutionize space exploration by reducing mass and simultaneously increasing capability. Thermal, Radiation, Impact Protective Shields: Atmospheric probes and humans on long duration deep space missions involved in Solar System Exploration must safely endure 3 significant hazards: (i) atmospheric entry; (ii) radiation; and (iii) micrometeorite or debris impact. Nanostructured materials could be developed to address all three hazards with a single protective shield, which would involve much less mass than a traditional approach. The concept can be ready in time for incorporation into NASA s Crew Exploration Vehicle, and possible entry probes to fly on the Jupiter Icy Moons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vaisman, Michelle; Fan, Shizhao; Nay Yaung, Kevin

As single-junction Si solar cells approach their practical efficiency limits, a new pathway is necessary to increase efficiency in order to realize more cost-effective photovoltaics. Integrating III-V cells onto Si in a multijunction architecture is a promising approach that can achieve high efficiency while leveraging the infrastructure already in place for Si and III-V technology. In this Letter, we demonstrate a record 15.3%-efficient 1.7 eV GaAsP top cell on GaP/Si, enabled by recent advances in material quality in conjunction with an improved device design and a high-performance antireflection coating. Furthermore, we present a separate Si bottom cell with a 1.7more » eV GaAsP optical filter to absorb most of the visible light with an efficiency of 6.3%, showing the feasibility of monolithic III-V/Si tandems with >20% efficiency. Through spectral efficiency analysis, we also compare our results to previously published GaAsP and Si devices, projecting tandem GaAsP/Si efficiencies of up to 25.6% based on current state-of-the-art individual subcells. With the aid of modeling, we further illustrate a realistic path toward 30% GaAsP/Si tandems for high-efficiency, monolithically integrated photovoltaics.« less

Facile Five-Step Heteroepitaxial Growth of GaAs Nanowires on Silicon Substrates and the Twin Formation Mechanism.

PubMed

Yao, Maoqing; Sheng, Chunyang; Ge, Mingyuan; Chi, Chun-Yung; Cong, Sen; Nakano, Aiichiro; Dapkus, P Daniel; Zhou, Chongwu

2016-02-23

Monolithic integration of III-V semiconductors with Si has been pursued for some time in the semiconductor industry. However, the mismatch of lattice constants and thermal expansion coefficients represents a large technological challenge for the heteroepitaxial growth. Nanowires, due to their small lateral dimension, can relieve strain and mitigate dislocation formation to allow single-crystal III-V materials to be grown on Si. Here, we report a facile five-step heteroepitaxial growth of GaAs nanowires on Si using selective area growth (SAG) in metalorganic chemical vapor deposition, and we further report an in-depth study on the twin formation mechanism. Rotational twin defects were observed in the nanowire structures and showed strong dependence on the growth condition and nanowire size. We adopt a model of faceted growth to demonstrate the formation of twins during growth, which is well supported by both a transmission electron microscopy study and simulation based on nucleation energetics. Our study has led to twin-free segments in the length up to 80 nm, a significant improvement compared to previous work using SAG. The achievements may open up opportunities for future functional III-V-on-Si heterostructure devices.

Synthesis, properties and applications of 2D layered MIIIXVI (M = Ga, In; X = S, Se, Te) materials.

PubMed

Xu, Kai; Yin, Lei; Huang, Yun; Shifa, Tofik Ahmed; Chu, Junwei; Wang, Feng; Cheng, Ruiqing; Wang, Zhenxing; He, Jun

2016-09-29

Group III-VI compounds M III X VI (M = Ga, In; X = S, Se, Te) are one class of important 2D layered materials and are currently attracting increasing interest due to their unique electronic and optoelectronic properties and their great potential applications in various other fields. Similar to 2D layered transition metal dichalcogenides (TMDs), M III X VI also have the significant merits of ultrathin thickness, ultrahigh surface-to-volume ratio, and high compatibility with flexible devices. More impressively, in contrast with TMDCs, M III X VI demonstrate many superior properties, such as direct band gap electronic structure, high carrier mobility, rare p-type electronic behaviors, high charge density, and so on. These unique characteristics cause high-performance device applications in electronics, optoelectronics, and optics. In this review, we aim to provide a summary of the state-of-the-art of research activities in 2D layered M III X VI materials. The scope of the review covers the synthesis and properties of 2D layered M III X VI materials and their van der Waals heterostructures. We especially focus on the applications in electronics and optoelectronics. Moreover, the review concludes with some perspectives on future developments in this field.

Synthesis and optical properties of (GaAs)yGe5-2y alloys assembled from molecular building blocks

NASA Astrophysics Data System (ADS)

Sims, P. E.; Wallace, P. M.; Xu, Chi; Poweleit, C. D.; Claflin, B.; Kouvetakis, J.; Menéndez, J.

2017-09-01

Monocrystalline alloys of GaAs and Ge with compositions (GaAs)yGe5-2y have been synthesized following a chemical vapor deposition approach that promotes the incorporation of Ga and As atoms as isolated donor-acceptor pairs. The structural and optical properties show distinct behavior relative to (GaAs)1-xGe2x counterparts produced by conventional routes. Strong band gap photoluminescence is observed in the 0.5-0.6 eV range for samples whose compositions approach the GaAsGe3 limit for isolated Ga-As pairs. In such samples, the Ge-like Raman modes appear at higher frequencies and are considerably narrower than those observed in samples with higher Ge concentrations. These results suggest that the growth mechanism may favor the formation of ordered phases comprising Ga-As-Ge3 tetrahedra. In contrast with the diamond-to-zincblende ordering transition previously reported for III-V-IV alloys, ordered structures built from Ga-As-Ge3 tetrahedra feature III-III and V-V pairs as third-nearest neighbors, and therefore both the III- and V-components are equally present in each of two fcc sublattices of the average diamond-like structure. These bonding arrangements likely lead to the observed optical response, indicating potential applications of these materials in mid-IR technologies integrated on Si.

Development of III-V p-MOSFETs with high-kappa gate stack for future CMOS applications

NASA Astrophysics Data System (ADS)

Nagaiah, Padmaja

As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, non-silicon materials and new device architectures are gradually being introduced to improve Si integrated circuit performance and continue transistor scaling. Recently, the replacement of SiO2 with a high-k material (HfO2) as gate dielectric has essentially removed one of the biggest advantages of Si as channel material. As a result, alternate high mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. III-V materials in particular have become of great interest as channel materials, owing to their superior electron transport properties. However, there are several critical challenges that need to be addressed before III-V based CMOS can replace Si CMOS technology. Some of these challenges include development of a high quality, thermally stable gate dielectric/III-V interface, and improvement in III-V p-channel hole mobility to complement the n-channel mobility, low source/drain resistance and integration onto Si substrate. In this thesis, we would be addressing the first two issues i.e. the development high performance III-V p-channels and obtaining high quality III-V/high-k interface. We start with using the device architecture of the already established InGaAs n-channels as a baseline to understand the effect of remote scattering from the high-k oxide and oxide/semiconductor interface on channel transport properties such as electron mobility and channel electron concentration. Temperature dependent Hall electron mobility measurements were performed to separate various scattering induced mobility limiting factors. Dependence of channel mobility on proximity of the channel to the oxide interface, oxide thickness, annealing conditions are discussed. The results from this work will be used in the design of the p-channel MOSFETs. Following this, InxGa1-xAs (x>0.53) is chosen as channel material for developing p-channel MOSFETs. Band engineering, strain induced valence band splitting and quantum confinement is used to improve channel hole mobility. Experimental results on the Hall hole mobility is presented for InxGa1-xAs channels with varying In content, thickness of the quantum well and temperature. Then, high mobility InxGa 1-xAs heterostructure thus obtained are integrated with in-situ deposited high-k gate oxide required for high performance p-MOSFET and discuss the challenges associated with the gated structure and draw conclusions on this material system. Antimonide based channel materials such as GaSb and InxGa 1-xSb are explored for III-V based p-MOSFETs in last two chapters. Options for Sb based strained QW channels to obtain maximum hole mobility by varying the strain, channel and barrier material, thickness of the layers etc. is discussed followed by the growth of these Sb channels on GaAs and InP substrates using molecular beam epitaxy. The physical properties of the structures such as the heterostructure quality, alloy content and surface roughness are examined via TEM, XRD and AFM. Following this, electrical measurement results on Hall hole mobility is presented. The effect of strain, alloy content, temperature and thickness on channel mobility and concentration is reported. Development of GaSb n- and p-MOS capacitor structures with in-situ deposited HfO2 gate oxide dielectric using in-situ deposited amorphous Si (a-Si) interface passivation layer (IPL) to improve the interface quality of high-k oxide and (In)GaSb surface is presented. In-situ deposited gate oxides such as Al2O3 and combination oxide of Al 2O3 and HfO2 with and without the a-Si IPL are also explored as alternate gate dielectrics. Subsequently, MOS capacitor structures using buried InGaSb QWs are demonstrated. Development of an inversion type bulk GaSb with implanted source-drain contacts and in-situ deposited gate oxide HfO2 gate oxide is discussed. The merits of biaxial compressive strain is demonstrated on strained surface and buried channel In0.36 Ga0.64Sb QW MOSFETs with thin top barrier and in-situ deposited a-Si IPL and high-k HfO2 as well as combination Al 2O3+HfO2 gate stacks and ex-situ atomic layer deposited (ALD) combination gate oxide and with thin 2 nm InAs surface passivation layer is presented. Finally, summary of the salient results from the different chapters is provided with recommendations for future research.

A novel integrated assessment methodology of urban water reuse.

PubMed

Listowski, A; Ngo, H H; Guo, W S; Vigneswaran, S

2011-01-01

Wastewater is no longer considered a waste product and water reuse needs to play a stronger part in securing urban water supply. Although treatment technologies for water reclamation have significantly improved the question that deserves further analysis is, how selection of a particular wastewater treatment technology relates to performance and sustainability? The proposed assessment model integrates; (i) technology, characterised by selected quantity and quality performance parameters; (ii) productivity, efficiency and reliability criteria; (iii) quantitative performance indicators; (iv) development of evaluation model. The challenges related to hierarchy and selections of performance indicators have been resolved through the case study analysis. The goal of this study is to validate a new assessment methodology in relation to performance of the microfiltration (MF) technology, a key element of the treatment process. Specific performance data and measurements were obtained at specific Control and Data Acquisition Points (CP) to satisfy the input-output inventory in relation to water resources, products, material flows, energy requirements, chemicals use, etc. Performance assessment process contains analysis and necessary linking across important parametric functions leading to reliable outcomes and results.

Design considerations and emerging challenges for nanotube-, nanowire-, and negative capacitor-field effect transistors

NASA Astrophysics Data System (ADS)

Wahab, Md. Abdul

As the era of classical planar metal-oxide-semiconductor field-effect transistors (MOSFETs) comes to an end, the semiconductor industry is beginning to adopt 3D device architectures, such as FinFETs, starting at the 22 nm technology node. Since physical limits such as short channel effect (SCE) and self-heating may dominate, it may be difficult to scale Si FinFET below 10 nm. In this regard, transistors with different materials, geometries, or operating principles may help. For example, gate has excellent electrostatic control over 2D thin film channel with planar geometry, and 1D nanowire (NW) channel with gate-all-around (GAA) geometry to reduce SCE. High carrier mobility of single wall carbon nanotube (SWNT) or III-V channels may reduce VDD to reduce power consumption. Therefore, as channel of transistor, 2D thin film of array SWNTs and 1D III-V multi NWs are promising for sub 10 nm technology nodes. In this thesis, we analyze the potential of these transistors from process, performance, and reliability perspectives. For SWNT FETs, we discuss a set of challenges (such as how to (i) characterize diameter distribution, (ii) remove metallic (m)-SWNTs, and (iii) avoid electrostatic cross-talk among the neighboring SWNTs), and demonstrate solution strategies both theoretically and experimentally. Regarding self-heating in these new class of devices (SWNT FET and GAA NW FET including state-of-the-art FinFET), higher thermal resistance from poor thermal conducting oxides results significant temperature rise, and reduces the IC life-time. For GAA NW FETs, we discuss accurate self-heating evaluation with good spatial, temporal, and thermal resolutions. The introduction of negative capacitor (NC), as gate dielectric stack of transistor, allows sub 60 mV/dec operation to reduce power consumption significantly. Taken together, our work provides a comprehensive perspective regarding the challenges and opportunities of sub 10 nm technology nodes.

Design and Analysis of CMOS-Compatible III-V Compound Electron-Hole Bilayer Tunneling Field-Effect Transistor for Ultra-Low-Power Applications.

PubMed

Kim, Sung Yoon; Seo, Jae Hwa; Yoon, Young Jun; Lee, Ho-Young; Lee, Seong Min; Cho, Seongjae; Kang, In Man

2015-10-01

In this work, we design and analyze complementary metal-oxide-semiconductor (CMOS)-compatible III-V compound electron-hole bilayer (EHB) tunneling field-effect transistors (TFETs) by using two-dimensional (2D) technology computer-aided design (TCAD) simulations. A recently proposed EHB TFET exploits a bias-induced band-to-band tunneling (BTBT) across the electron-hole bilayer by an electric field from the top and bottom gates. This is in contrast to conventional planar p(+)-p(-)-n TFETs, which utilize BTBT across the source-to-channel junction. We applied III-V compound semiconductor materials to the EHB TFETs in order to enhance the current drivability and switching performance. Devices based on various compound semiconductor materials have been designed and analyzed in terms of their primary DC characteristics. In addition, the operational principles were validated by close examination of the electron concentrations and energy-band diagrams under various operation conditions. The simulation results of the optimally designed In0.533Ga0.47As EHB TFET show outstanding performance, with an on-state current (Ion) of 249.5 μA/μm, subthreshold swing (S) of 11.4 mV/dec, and threshold voltage (Vth) of 50 mV at VDS = 0.5 V. Based on the DC-optimized InGaAs EHB TFET, the CMOS inverter circuit was simulated in views of static and dynamic behaviors of the p-channel device with exchanges between top and bottom gates or between source and drain electrodes maintaining the device structure.

Progress in efficient doping of high aluminum-containing group III-nitrides

NASA Astrophysics Data System (ADS)

Liang, Y.-H.; Towe, E.

2018-03-01

The group III-nitride (InN, GaN, and AlN) class of semiconductors has become one of two that are critical to a number of technologies in modern life—the other being silicon. Light-emitting diodes made from (In,Ga)N, for example, dominate recent innovations in general illumination and signaling. Even though the (In,Ga)N materials system is fairly well established and widely used in advanced devices, challenges continue to impede development of devices that include aluminum-containing nitride films such as (Al,Ga)N. The main difficulty is efficient doping of films with aluminum-rich compositions; the problem is particularly severe for p-type doping, which is essential for Ohmic contacts to bipolar device structures. This review briefly summarizes the fundamental issues related to p-type doping, and then discusses a number of approaches that are being pursued to resolve the doping problem or for circumventing the need for p-type doping. Finally, we discuss an approach to doping under liquid-metal-enabled growth by molecular beam epitaxy. Recent results from a number of groups appear to indicate that p-type doping of nitride films under liquid-metal-enabled growth conditions might offer a solution to the doping problem—at least for materials grown by molecular beam epitaxy.

[CrIII(NCMe)6]3+--a labile CrIII source enabling formation of Cr[M(CN)6] (M=V, Cr, Mn, Fe) Prussian blue-type magnetic materials.

PubMed

Nelson, Kendric J; Daniels, Matthew C; Reiff, William M; Troff, Shayla A; Miller, Joel S

2007-11-26

The kinetic inertness of the hexaaquachromium(III) (kH2O=2.4x10(-6) s(-1)) has led to challenges with respect to incorporating CrIII ions into Prussian blue-type materials; however, hexakis(acetonitrile)chromium(III) was shown to be substantially more labile (approximately 10(4) times) and enables a new synthetic route for the synthesis of these materials via nonaqueous solvents. The synthesis, spectroscopic, and physical properties of Cr[M(CN)6] (M=V, Cr, Mn, Fe) Prussian blue analogues synthesized from [CrIII(NCMe)6]3+ and the corresponding [MIII(CN)6]3- are described. All these compounds {(NEt4)0.02CrIII[VIII(CN)6]0.98(BF4)(0.08).0.10MeCN (1), CrIII[CrIII(CN)6].0.16MeCN (2), CrIII[MnIII(CN)6].0.10MeCN (3), and (NEt4)0.04CrIII0.64CrIV0.40[FeII(CN)6]0.40[FeIII(CN)6]0.60(BF4)(0.16).1.02MeCN (4)} are ferrimagnets exhibiting cluster-glass behavior. Strong antiferromagnetic coupling was observed for M=V, Cr, and Mn with Weiss constants (theta) ranging from -132 to -524 K; and in 2, where the strongest coupling is observed (theta=-524 K), the highest Tc (110 K) value was observed. Weak antiferromagnetic coupling was observed for M=Fe (theta=-12 K) leading to the lowest Tc (3 K) value in this series. Weak coupling and the low Tc value observed in 4 were additionally contributed by the presence of both [FeII(CN)6]4- and [FeIII(CN)6]3- as confirmed by 57Fe-Mössbauer spectroscopy.

Chromium and zinc uptake by algae Gelidium and agar extraction algal waste: kinetics and equilibrium.

PubMed

Vilar, Vítor J P; Botelho, Cidália M S; Boaventura, Rui A R

2007-11-19

Biosorption of chromium and zinc ions by an industrial algal waste, from agar extraction industry has been studied in a batch system. This biosorbent was compared with the algae Gelidium itself, which is the raw material for agar extraction, and the industrial waste immobilized with polyacrylonitrile (composite material). Langmuir and Langmuir-Freundlich equilibrium models describe well the equilibrium data. The parameters of Langmuir equilibrium model at pH 5.3 and 20 degrees C were for the algae, q(L)=18 mg Cr(III)g(-1) and 13 mgZn(II)g(-1), K(L) = 0.021l mg(-1)Cr(III) and 0.026l mg(-1) Zn(II); for the algal waste, q(L)=12 mgCr(III)g(-1) and 7mgZn(II)g(-1), K(L)=0.033lmg(-1) Cr(III) and 0.042l mg(-1) Zn(II); for the composite material, q(L) = 9 mgCr(III)g(-1) and 6 mgZn(II)g(-1), K(L)=0.032l mg(-1)Cr(III) and 0.034l mg(-1)Zn(II). The biosorbents exhibited a higher preference for Cr(III) ions and algae Gelidium is the best one. The pseudo-first-order Lagergren and pseudo-second-order models fitted well the kinetic data for the two metal ions. Kinetic constants and equilibrium uptake concentrations given by the pseudo-second-order model for an initial Cr(III) and Zn(II) concentration of approximately 100 mgl(-1), at pH 5.3 and 20 degrees C were k(2,ads)=0.04 g mg(-1)Cr(III)min(-1) and 0.07 g mg(-1)Zn(II)min(-1), q(eq)=11.9 mgCr(III)g(-1) and 9.5 mgZn(II)g(-1) for algae; k(2,ads)=0.17 g mg(-1)Cr(III)min(-1) and 0.19 g mg(-1)Zn(II)min(-1), q(eq)=8.3 mgCr(III)g(-1) and 5.6 mgZn(II)g(-1) for algal waste; k(2,ads)=0.01 g mg(-1)Cr(III)min(-1) and 0.18 g mg(-1)Zn(II)min(-1), q(eq)=8.0 mgCr(III)g(-1) and 4.4 mgZn(II)g(-1) for composite material. Biosorption was modelled using a batch adsorber mass transfer kinetic model, which successfully predicts Cr(III) and Zn(II) concentration profiles. The calculated average homogeneous diffusivities, D(h), were 4.2 x 10(-8), 8.3 x 10(-8) and 1.4 x 10(-8)cm(2)s(-1) for Cr(III) and 4.8 x 10(-8), 9.7 x 10(-8) and 6.2 x 10(-8)cm(2)s(-1) for Zn(II), respectively, for Gelidium, algal waste and composite material. The algal waste has the lower intraparticle resistance.

Controlled Spalling in (100)-Oriented Germanium by Electroplating

NASA Astrophysics Data System (ADS)

Crouse, Dustin Ray

This work investigates controlled spalling as a method to exfoliate thin films of various thickness from rigid, crystalline germanium (Ge) substrates and to enable substrate reuse for III-V single junction photovoltaic devices. Technological limitations impeding wide-spread adoption of flexible electronics and high-material-cost photovoltaic devices have motivated significant interest in a method to remove devices from their substrates. DC magnetron sputtering has been previously utilized to remove semiconductor devices of various thicknesses from Ge substrates, but this method is expensive and time-consuming. Controlled spalling via high-speed electrodeposition is a fast, inexpensive exfoliation method that utilizes a tensile-stressed metal layer deposited on a (100)-oriented Ge substrate and an external force to mechanically propagate a crack parallel to the surface at a desired depth in the substrate material. Suo and Hutchinson's quantitative models describe critical combinations of film thickness and strain mismatch between a film and substrate at which a stressed bilayer system spontaneously spalls; however, fine control over a wide steady-state spall depth range has been limited by the ability to experimentally tailor strain mismatch caused by residual stress within deposited stressor layers. This work investigates the effect of tuning electroplating current density and electrolyte chemistry on the residual stress in a nickel stressor film and their impact on the achievable spall depth range. Steady-state spall depth is found to increase with increasing stressor layer thickness and decrease with increasing residual stress. By tailoring residual stress through adjusting plating conditions and the electrolyte's phosphorous concentration, wide control over spall depth within Ge substrates from sub-micron to 76microm-thicknesses were achieved. To assess the viability of utilizing controlled spalling for substrate reuse, this dissertation demonstrates the first III-V solar cells (GaInAsP, Eg 1.7 eV) grown directly on a spalled-Ge substrate without any additional surface preparation. Widespread adoption of high-efficiency III-V solar cells has been limited by expensive deposition processes and high material cost of substrates. Substrate reuse offers a promising route towards enabling III-V devices to become cost-competitive for one-sun terrestrial applications. In this study, the quality of spalled Ge surfaces is characterized to assess lattice matching capability between the device layer materials and the substrate. GaAs films grown on spalled Ge substrates by hydride vapor phase epitaxy were single-crystal in nature. III-V solar cells grown on spalled and pristine Ge substrates show nearly equivalent efficiency of 8%, despite the roughness of the spalled-Ge substrate. Principles of fractography were used to deduce that surface roughness originated from non-uniform crack propagation and mixed-mode loading during the spalling process.

Removal of arsenic from groundwater by using a native isolated arsenite-oxidizing bacterium.

PubMed

Kao, An-Chieh; Chu, Yu-Ju; Hsu, Fu-Lan; Liao, Vivian Hsiu-Chuan

2013-12-01

Arsenic (As) contamination of groundwater is a significant public health concern. In this study, the removal of arsenic from groundwater using biological processes was investigated. The efficiency of arsenite (As(III)) bacterial oxidation and subsequent arsenate (As(V)) removal from contaminated groundwater using bacterial biomass was examined. A novel As(III)-oxidizing bacterium (As7325) was isolated from the aquifer in the blackfoot disease (BFD) endemic area in Taiwan. As7325 oxidized 2300μg/l As(III) using in situ As(III)-contaminated groundwater under aerobic conditions within 1d. After the oxidation of As(III) to As(V), As(V) removal was further examined using As7325 cell pellets. The results showed that As(V) could be adsorbed efficiently by lyophilized As7325 cell pellets, the efficiency of which was related to lyophilized cell pellet concentration. Our study conducted the examination of an alternative technology for the removal of As(III) and As(V) from groundwater, indicating that the oxidation of As(III)-contaminated groundwater by native isolated bacterium, followed by As(V) removal using bacterial biomass is a potentially effective technology for the treatment of As(III)-contaminated groundwater. © 2013.

Method of passivating semiconductor surfaces

DOEpatents

Wanlass, M.W.

1990-06-19

A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

Method of passivating semiconductor surfaces

DOEpatents

Wanlass, Mark W.

1990-01-01

A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

Final Report: Vapor Transport Deposition for Thin Film III-V Photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boettcher, Shannon; Greenaway, Ann; Boucher, Jason

2016-02-10

Silicon, the dominant photovoltaic (PV) technology, is reaching its fundamental performance limits as a single absorber/junction technology. Higher efficiency devices are needed to reduce cost further because the balance of systems account for about two-thirds of the overall cost of the solar electricity. III-V semiconductors such as GaAs are used to make the highest-efficiency photovoltaic devices, but the costs of manufacture are much too high for non-concentrated terrestrial applications. The cost of III-V’s is driven by two factors: (1) metal-organic chemical vapor deposition (MOCVD), the dominant growth technology, employs expensive, toxic and pyrophoric gas-phase precursors, and (2) the growth substratesmore » conventionally required for high-performance devices are monocrystalline III-V wafers. The primary goal of this project was to show that close-spaced vapor transport (CSVT), using water vapor as a transport agent, is a scalable deposition technology for growing low-cost epitaxial III-V photovoltaic devices. The secondary goal was to integrate those devices on Si substrates for high-efficiency tandem applications using interface nanopatterning to address the lattice mismatch. In the first task, we developed a CSVT process that used only safe solid-source powder precursors to grow epitaxial GaAs with controlled n and p doping and mobilities/lifetimes similar to that obtainable via MOCVD. Using photoelectrochemical characterization, we showed that the best material had near unity internal quantum efficiency for carrier collection and minority carrier diffusions lengths in of ~ 8 μm, suitable for PV devices with >25% efficiency. In the second task we developed the first pn junction photovoltaics using CSVT and showed unpassivated structures with open circuit photovoltages > 915 mV and internal quantum efficiencies >0.9. We also characterized morphological and electrical defects and identified routes to reduce those defects. In task three we grew epitaxial ternary GaAsxP 1-x and In 0.5Ga 0.5P alloys, with composition set by the ratio of GaAs/GaP or InP/GaP mixed as the source powder. GaAs 0.3P 0.7 has the appropriate bandgap to serve as a top cell on Si and In 0.5Ga 0.5P is near the composition used as a surface passivation layer on GaAs pn junction photovoltaics. In the final task we demonstrated III-V selective area epitaxy using CSVT as a first step toward the growth of III-V micro- or nanostructures for an integrated tandem solar cell on Si. We also found that direct epitaxial growth on Si appears to be impossible in the current H 2O-CSVT reactor design, likely due to the formation of SiO x. This work sets the stage for targeted development of an improved CSVT process and for the scale up of the proof-of-concept work from a research to manufacturing-relevant platform. Replacing H 2O as a transport agent with HCl would provide the ability to deposit directly on Si by avoiding oxide formation and to allow for the deposition of Al-containing alloys that would otherwise oxidize. Improved engineering design and implementation of an in-line multi-station CSVT would allow for direct deposition of device structures in a single system.« less

Novel concepts for low-cost and high-efficient thin film solar cells

NASA Astrophysics Data System (ADS)

Gómez, D.; Menéndez, A.; Sánchez, P.; Martínez, A.; Andrés, L. J.; Menéndez, M. F.; Campos, N.; García, A.; Sánchez, B.

2011-09-01

This work presents the activities carried out at ITMA Materials Technology related to the building integration of thin film (TF) photovoltaics (PV). Three different approaches have been developed in order to achieve high efficient solar cells at low manufacturing costs: (i) a new route for manufacturing monolithical silicon based thin film solar cells on building materials, (ii) the use of metallic nanoparticles for light trapping (plasmonic effects and light scattering) and (iii) the luminescent sol-gel coating on glass for solar concentration. In the first case, amorphous silicon modules (single junction) have been successfully manufactured at lab scale on steel and commercial ceramic substrates with efficiencies of 5.4% and 4.0%, respectively. Promising initial attempts have been also made in ethylene tetrafluoroethylene (ETFE), a polymer with high potential in textile architecture. In a similar way, the development of nanotechnology based coatings (metallic nanoparticles and luminescent materials) represent the most innovative part of the work and some preliminary results are showed.

InAs/GaSb type-II superlattice infrared detectors: Future prospect

NASA Astrophysics Data System (ADS)

Rogalski, A.; Martyniuk, P.; Kopytko, M.

2017-09-01

Investigations of antimonide-based materials began at about the same time as HgCdTe ternary alloys—in the 1950s, and the apparent rapid success of their technology, especially low-dimensional solids, depends on the previous five decades of III-V materials and device research. However, the sophisticated physics associated with the antimonide-based bandgap engineering concept started at the beginning of 1990s gave a new impact and interest in development of infrared detector structures within academic and national laboratories. The development of InAs/GaSb type-II superlattices (T2SLs) results from two primary motivations: the perceived challenges of reproducibly fabricating high-operability HgCdTe focal plane arrays (FPAs) at reasonable cost and the theoretical predictions of lower Auger recombination for type T2SL detectors compared with HgCdTe. Second motivation—lower Auger recombination should be translated into a fundamental advantage for T2SL over HgCdTe in terms of lower dark current and/or higher operating temperature, provided other parameters such as Shockley-Read-Hall (SRH) lifetime are equal. InAs/GaSb T2SL photodetectors offer similar performance to HgCdTe at an equivalent cut-off wavelength, but with a sizeable penalty in operating temperature, due to the inherent difference in SRH lifetimes. It is predicted that since the future infrared (IR) systems will be based on the room temperature operation of depletion-current limited arrays with pixel densities that are fully consistent with background- and diffraction-limited performance due to the system optics, the material system with long SRH lifetime will be required. Since T2SLs are very much resisted in attempts to improve its SRH lifetime, currently the only material that meets this requirement is HgCdTe. Due to less ionic chemical bonding, III-V semiconductors are more robust than their II-VI counterparts. As a result, III-V-based FPAs excel in operability, spatial uniformity, temporal stability, scalability, producibility, and affordability—the so-called "ibility" advantages.

An Overview of the Cooperative Effort between the United States Department of Energy and the China Atomic Energy Authority to Enhance MPC&A Inspections for Civil Nuclear Facilities in China

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahern, Keith; Daming, Liu; Hanley, Tim

The United States Department of Energy, National Nuclear Security Administration (DOE/NNSA) and the China Atomic Energy Authority (CAEA) are cooperating to enhance the domestic regulatory inspections capacity for special nuclear material protection, control and accounting (MPC&A) requirements for civil nuclear facilities in China. This cooperation is conducted under the auspices of the Agreement between the Department of Energy of the United States of America and the State Development and Planning Commission of the People s Republic of China on Cooperation Concerning Peaceful Uses of Nuclear Technology. This initial successful effort was conducted in three phases. Phase I focused on introducingmore » CAEA personnel to DOE and U. S. Nuclear Regulatory Commission inspection methods for U. S. facilities. This phase was completed in January 2008 during meetings in Beijing. Phase II focused on developing physical protection and material control and accounting inspection exercises that enforced U. S. inspection methods identified during Phase 1. Hands on inspection activities were conducted in the United States over a two week period in July 2009. Simulated deficiencies were integrated into the inspection exercises. The U. S. and Chinese participants actively identified and discussed deficiencies noted during the two week training course. The material control and accounting inspection exercises were conducted at the Paducah Gaseous Diffusion Plant (PGDP) in Paducah, KY. The physical protection inspection exercises were conducted at the Oak Ridge National Laboratory (ORNL) in Oak Ridge, TN. Phase III leveraged information provided under Phase I and experience gained under Phase II to develop a formal inspection guide that incorporates a systematic approach to training for Chinese MPC&A field inspectors. Additional hands on exercises that are applicable to Chinese regulations were incorporated into the Phase III training material. Phase III was completed in May 2010 at the China Institute of Atomic Energy (CIAE) in Beijing. This paper provides details of the successful cooperation between DOE/NNSA and CAEA for all phases of the cooperative effort to enhance civil domestic MPC&A inspections in China.« less

Elucidation of metal-ion accumulation induced by hydrogen bonds on protein surfaces by using porous lysozyme crystals containing Rh(III) ions as the model surfaces.

PubMed

Ueno, Takafumi; Abe, Satoshi; Koshiyama, Tomomi; Ohki, Takahiro; Hikage, Tatsuo; Watanabe, Yoshihito

2010-03-01

Metal-ion accumulation on protein surfaces is a crucial step in the initiation of small-metal clusters and the formation of inorganic materials in nature. This event is expected to control the nucleation, growth, and position of the materials. There remain many unknowns, as to how proteins affect the initial process at the atomic level, although multistep assembly processes of the materials formation by both native and model systems have been clarified at the macroscopic level. Herein the cooperative effects of amino acids and hydrogen bonds promoting metal accumulation reactions are clarified by using porous hen egg white lysozyme (HEWL) crystals containing Rh(III) ions, as model protein surfaces for the reactions. The experimental results reveal noteworthy implications for initiation of metal accumulation, which involve highly cooperative dynamics of amino acids and hydrogen bonds: i) Disruption of hydrogen bonds can induce conformational changes of amino-acid residues to capture Rh(III) ions. ii) Water molecules pre-organized by hydrogen bonds can stabilize Rh(III) coordination as aqua ligands. iii) Water molecules participating in hydrogen bonds with amino-acid residues can be replaced by Rh(III) ions to form polynuclear structures with the residues. iv) Rh(III) aqua complexes are retained on amino-acid residues through stabilizing hydrogen bonds even at low pH (approximately 2). These metal-protein interactions including hydrogen bonds may promote native metal accumulation reactions and also may be useful in the preparation of new inorganic materials that incorporate proteins.

Listening to Chemical Materials: Determination of the Photophysical Parameters by Photoacoustic Spectroscopy

NASA Astrophysics Data System (ADS)

Yang, Y. T.; Zhang, S. Y.; Liu, X. J.

2012-11-01

Recently, photoacoustic (PA) spectroscopy has emerged as a valuable tool for the study of various kinds of materials. Herein, we present the results of PA spectral studies of chemical materials. First, the PA study on luminescent materials in condensed states is reported. Combining with the luminescence technique, the energy transfer efficiency and the intrinsic luminescence quantum yield are determined for a europium (III) complex in the glassy state, smectic A phase, and the isotropic liquid. Second, neodymium (III) compounds with l-glycine, l-phenylalanine, and l-tryptophan are synthesized and their PA spectra are reported. The nephelauxetic ratio and Sinha parameter are calculated based on the PA spectra. The environmental effect on the f-f transitions of the neodymium(III) ion is also studied.

26 CFR 1.1321-1 - Involuntary liquidation of lifo inventories.

Code of Federal Regulations, 2011 CFR

2011-04-01

... shall be increased to the extent of such difference. Any deficiency in the income or excess profits tax... shortages; (iii) to material shortages resulting from priorities or allocations; (iv) to labor shortages; or... shortages; (iii) material shortages resulting from priorities or allocations; (iv) labor shortages; and (v...

Research Staff | Photovoltaic Research | NREL

Science.gov Websites

-7511 Name Position Email Phone Al-Jassim, Mowafak Group Research Manager III-Materials Science , Teresa Acting Group Manager Teresa.Barnes@nrel.gov 303-384-6682 Beard, Matt Researcher VI-Chemistry @nrel.gov 303-384-7611 Blackburn, Jeffrey Group Research Manager III-Materials Science Jeffrey.Blackburn

Application of titanium dioxide in arsenic removal from water: A review.

PubMed

Guan, Xiaohong; Du, Juanshan; Meng, Xiaoguang; Sun, Yuankui; Sun, Bo; Hu, Qinghai

2012-05-15

Natural arsenic pollution is a global phenomenon and various technologies have been developed to remove arsenic from drinking water. The application of TiO(2) and TiO(2)-based materials in removing inorganic and organic arsenic was summarized. TiO(2)-based arsenic removal methods developed to date have been focused on the photocatalytic oxidation (PCO) of arsenite/organic arsenic to arsenate and adsorption of inorganic and organic arsenic. Many efforts have been taken to improve the performance of TiO(2) by either combing TiO(2) with adsorbents with good adsorption property in one system or developing bifunctional adsorbents with both great photocatalytic ability and high adsorption capacity. Attempts have also been made to immobilize fine TiO(2) particles on supporting materials like chitosan beads or granulate it to facilitate its separation from water. Among the anions commonly exist in groundwater, humic acid and bicarbonate have significant influence on TiO(2) photocatalyzed oxidation of As(III)/organic arsenic while phosphate, silicate, fluoride, and humic acid affect arsenic adsorption by TiO(2)-based materials. There has been a controversy over the TiO(2) PCO mechanisms of arsenite for the past 10 years but the adsorption mechanisms of inorganic and organic arsenic onto TiO(2)-based materials are relatively well established. Future needs in TiO(2)-based arsenic removal technology are proposed. Copyright © 2012 Elsevier B.V. All rights reserved.

Optical characterization of the new nanocomposite SBMA/Eu(TTA)3(Ph3PO)2

NASA Astrophysics Data System (ADS)

Bordian, Olga; Verlan, Victor; Culeac, Ion; Iovu, Mihail; Zubareva, Vera; Nistor, Iurie

2015-02-01

We describe a new nanocomposite material based on the copolymer of styrene with butyl methacrylate (1:1) (SBMA), and coordinating compound of Europium(III) Eu(TTA)3(Ph3PO)2. The SBMA/Eu(TTA)3(Ph3PO)2 nanocomposite was prepared by a simple technology and can be obtained in the form of optical fibers, thin films and planar waveguides on various substrates with large area. Experimental results on optical transmission and photoluminescence spectroscopy are presented. The nanocomposite exhibits a strong photoluminescence emission in the range 560-750 nm, with the main photoluminescence band at 613 nm.

Challenges and breakthroughs in recent research on self-assembly

PubMed Central

Ariga, Katsuhiko; Hill, Jonathan P; Lee, Michael V; Vinu, Ajayan; Charvet, Richard; Acharya, Somobrata

2008-01-01

The controlled fabrication of nanometer-scale objects is without doubt one of the central issues in current science and technology. However, existing fabrication techniques suffer from several disadvantages including size-restrictions and a general paucity of applicable materials. Because of this, the development of alternative approaches based on supramolecular self-assembly processes is anticipated as a breakthrough methodology. This review article aims to comprehensively summarize the salient aspects of self-assembly through the introduction of the recent challenges and breakthroughs in three categories: (i) types of self-assembly in bulk media; (ii) types of components for self-assembly in bulk media; and (iii) self-assembly at interfaces. PMID:27877935

Affordable MMICs for Air Force systems

NASA Astrophysics Data System (ADS)

Kemerley, Robert T.; Fayette, Daniel F.

1991-05-01

The paper deals with a program directed at demonstrating affordable MMIC chips - the microwave/mm-wave monolithic integrated circuit (MIMIC) program. Focus is placed on experiments involving the growth and characterization of III-V materials, and the design, fabrication, and evaluation of ICs in the 1 to 60 GHz frequency range, as well as efforts related to the reliability testing, failure analysis, and generation of qualified manufacture's list procedures for GaAs MMICs and modules. Attributes associated with GaAs-technology devices, quality, reliability, and performance in select environments are discussed, including the dependence of these structures over temperature ranges, electrostatic discharge sensitivity, and susceptibility to environmental stresses.

Results of the Air Force high efficiency cascaded multiple bandgap solar cell programs

NASA Technical Reports Server (NTRS)

Rahilly, W. P.

1980-01-01

The III-V semiconductor materials system that was selected for continued cascade cell development was the AlGaAs cell on GaAs cell structure. The tunnel junction used as transparent ohmic contact between the top cell and the bottom cell continued to be the central difficulty in achieving the program objective of 25 percent AMO efficiency at 25 C. During the tunnel junction and top cell developments it became apparent that the AlGaAs cell has potential for independent development as a single junction converter and is a logical extension of the present GaAs heteroface technology.

1L Mark-IV Target Design Review

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koehler, Paul E.

This presentation includes General Design Considerations; Current (Mark-III) Lower Tier; Mark-III Upper Tier; Performance Metrics; General Improvements for Material Science; General Improvements for Nuclear Science; Improving FOM for Nuclear Science; General Design Considerations Summary; Design Optimization Studies; Expected Mark-IV Performance: Material Science; Expected Mark-IV Performance: Nuclear Science (Disk); Mark IV Enables Much Wider Range of Nuclear-Science FOM Gains than Mark III; Mark-IV Performance Summary; Rod or Disk? Center or Real FOV?; and Project Cost and Schedule.

Lateral electrochemical etching of III-nitride materials for microfabrication

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, Jung

Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.

Low loss, high and low index contrast waveguides in semiconductors

DOEpatents

Bond, Tiziana [Livermore, CA; Cole, Garrett [Berkeley, CA; Goddard, Lynford [Champaign, IL; Kallman, Jeff [Pleasanton, CA

2011-08-09

A system in one general embodiment includes a waveguide structure comprising a core of an alloy of Group III-V materials surrounded by an oxide (which may include one or more Group III-V metals), wherein an interface of the oxide and core is characterized by oxidation of the alloy for defining the core. A method in one general approach includes oxidizing a waveguide structure comprising an alloy of Group III-V materials for forming a core of the alloy surrounded by an oxide.

III-V Compounds and Alloys: An Update.

PubMed

Woodall, J M

1980-05-23

The III-V compounds and alloys have been studied for three decades. Until recently, these materials have been commercialized for only a few specialized optoelectronic devices and microwave devices. Advances in thin-film epitaxy techniques, such as liquid phase epitaxy and chemical vapor deposition, are now providing the ability to form good quality lattice-matched heterojunctions with III-V materials. New optoelectronic devices, such as room-temperature continuous-wave injection lasers, have already resulted. This newfound ability may also affect the field of highspeed integrated circuits.

Layer by Layer Growth of 2D Quantum Superlattices (NBIT III)

DTIC Science & Technology

2017-02-28

building quantum superlatticies using 2D materials as the building blocks. Specifically, we develop methods that allow i) large-scale growth of aligned...superlattice and heterostructures, iii) lateral and clean patterning of 2D materials for atomically-thin circuitry and iv) novel physical properties...high precision and flexibility beyond conventional methods. Moreover, it provides the solutions for current major barrier for 2D materials (e.g

3D Rapid Prototyping for Otolaryngology-Head and Neck Surgery: Applications in Image-Guidance, Surgical Simulation and Patient-Specific Modeling.

PubMed

Chan, Harley H L; Siewerdsen, Jeffrey H; Vescan, Allan; Daly, Michael J; Prisman, Eitan; Irish, Jonathan C

2015-01-01

The aim of this study was to demonstrate the role of advanced fabrication technology across a broad spectrum of head and neck surgical procedures, including applications in endoscopic sinus surgery, skull base surgery, and maxillofacial reconstruction. The initial case studies demonstrated three applications of rapid prototyping technology are in head and neck surgery: i) a mono-material paranasal sinus phantom for endoscopy training ii) a multi-material skull base simulator and iii) 3D patient-specific mandible templates. Digital processing of these phantoms is based on real patient or cadaveric 3D images such as CT or MRI data. Three endoscopic sinus surgeons examined the realism of the endoscopist training phantom. One experienced endoscopic skull base surgeon conducted advanced sinus procedures on the high-fidelity multi-material skull base simulator. Ten patients participated in a prospective clinical study examining patient-specific modeling for mandibular reconstructive surgery. Qualitative feedback to assess the realism of the endoscopy training phantom and high-fidelity multi-material phantom was acquired. Conformance comparisons using assessments from the blinded reconstructive surgeons measured the geometric performance between intra-operative and pre-operative reconstruction mandible plates. Both the endoscopy training phantom and the high-fidelity multi-material phantom received positive feedback on the realistic structure of the phantom models. Results suggested further improvement on the soft tissue structure of the phantom models is necessary. In the patient-specific mandible template study, the pre-operative plates were judged by two blinded surgeons as providing optimal conformance in 7 out of 10 cases. No statistical differences were found in plate fabrication time and conformance, with pre-operative plating providing the advantage of reducing time spent in the operation room. The applicability of common model design and fabrication techniques across a variety of otolaryngological sub-specialties suggests an emerging role for rapid prototyping technology in surgical education, procedure simulation, and clinical practice.

3D Rapid Prototyping for Otolaryngology—Head and Neck Surgery: Applications in Image-Guidance, Surgical Simulation and Patient-Specific Modeling

PubMed Central

Chan, Harley H. L.; Siewerdsen, Jeffrey H.; Vescan, Allan; Daly, Michael J.; Prisman, Eitan; Irish, Jonathan C.

2015-01-01

The aim of this study was to demonstrate the role of advanced fabrication technology across a broad spectrum of head and neck surgical procedures, including applications in endoscopic sinus surgery, skull base surgery, and maxillofacial reconstruction. The initial case studies demonstrated three applications of rapid prototyping technology are in head and neck surgery: i) a mono-material paranasal sinus phantom for endoscopy training ii) a multi-material skull base simulator and iii) 3D patient-specific mandible templates. Digital processing of these phantoms is based on real patient or cadaveric 3D images such as CT or MRI data. Three endoscopic sinus surgeons examined the realism of the endoscopist training phantom. One experienced endoscopic skull base surgeon conducted advanced sinus procedures on the high-fidelity multi-material skull base simulator. Ten patients participated in a prospective clinical study examining patient-specific modeling for mandibular reconstructive surgery. Qualitative feedback to assess the realism of the endoscopy training phantom and high-fidelity multi-material phantom was acquired. Conformance comparisons using assessments from the blinded reconstructive surgeons measured the geometric performance between intra-operative and pre-operative reconstruction mandible plates. Both the endoscopy training phantom and the high-fidelity multi-material phantom received positive feedback on the realistic structure of the phantom models. Results suggested further improvement on the soft tissue structure of the phantom models is necessary. In the patient-specific mandible template study, the pre-operative plates were judged by two blinded surgeons as providing optimal conformance in 7 out of 10 cases. No statistical differences were found in plate fabrication time and conformance, with pre-operative plating providing the advantage of reducing time spent in the operation room. The applicability of common model design and fabrication techniques across a variety of otolaryngological sub-specialties suggests an emerging role for rapid prototyping technology in surgical education, procedure simulation, and clinical practice. PMID:26331717

Is primate tool use special? Chimpanzee and New Caledonian crow compared

PubMed Central

McGrew, W. C.

2013-01-01

The chimpanzee (Pan troglodytes) is well-known in both nature and captivity as an impressive maker and user of tools, but recently the New Caledonian crow (Corvus moneduloides) has been championed as being equivalent or superior to the ape in elementary technology. I systematically compare the two taxa, going beyond simple presence/absence scoring of tool-using and -making types, on four more precise aspects of material culture: (i) types of associative technology (tools used in combination); (ii) modes of tool making; (iii) modes of tool use; and (iv) functions of tool use. I emphasize tool use in nature, when performance is habitual or customary, rather than in anecdotal or idiosyncratic. On all four measures, the ape shows more variety than does the corvid, especially in modes and functions that go beyond extractive foraging. However, more sustained field research is required on the crows before this contrast is conclusive. PMID:24101630

DOE Office of Scientific and Technical Information (OSTI.GOV)

NONE

Circulating fluidized-bed (CFB) boilers have ben used for years in Scandinavia to burn refuse-derived fuel (RDF). Now, Foster Wheeler Power Systems, Inc., (Clinton, N.J.) is bringing the technology to the US. Touted as the world`s largest waste-to-energy plant to use CFB technology, the Robbins (III.) Resource Recovery Facility will have the capacity to process 1,600 tons/d of municipal solid waste (MSW) when it begins operation in early 1997. The facility will have two materials-separation and RDF-processing trains, each with dual trommel screens, magnetic and eddy current separators, and shredders. About 25% of the incoming MSW will be sorted and removedmore » for recycling, while 75% of it will be turned into fuel, with a heat value of roughly 6,170 btu/lb. Once burned in the twin CFB boilers the resulting steam will be routed through a single turbine generator to produce 50,000 mW of electric power.« less

A Review & Assessment of Current Operating Conditions Allowable Stresses in ASME Section III Subsection NH

DOE Office of Scientific and Technical Information (OSTI.GOV)

R. W. Swindeman

2009-12-14

The current operating condition allowable stresses provided in ASME Section III, Subsection NH were reviewed for consistency with the criteria used to establish the stress allowables and with the allowable stresses provided in ASME Section II, Part D. It was found that the S{sub o} values in ASME III-NH were consistent with the S values in ASME IID for the five materials of interest. However, it was found that 0.80 S{sub r} was less than S{sub o} for some temperatures for four of the materials. Only values for alloy 800H appeared to be consistent with the criteria on which S{submore » o} values are established. With the intent of undertaking a more detailed evaluation of issues related to the allowable stresses in ASME III-NH, the availabilities of databases for the five materials were reviewed and augmented databases were assembled.« less

Measurement of Irradiated Pyroprocessing Samples via Laser Induced Breakdown Spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Phongikaroon, Supathorn

The primary objective of this research is to develop an applied technology and provide an assessment to remotely measure and analyze the real time or near real time concentrations of used nuclear fuel (UNF) dissolute in electrorefiners. Here, Laser-Induced Breakdown Spectroscopy (LIBS), in UNF pyroprocessing facilities will be investigated. LIBS is an elemental analysis method, which is based on the emission from plasma generated by focusing a laser beam into the medium. This technology has been reported to be applicable in the media of solids, liquids (includes molten metals), and gases for detecting elements of special nuclear materials. The advantagesmore » of applying the technology for pyroprocessing facilities are: (i) Rapid real-time elemental analysis|one measurement/laser pulse, or average spectra from multiple laser pulses for greater accuracy in < 2 minutes; (ii) Direct detection of elements and impurities in the system with low detection limits|element specific, ranging from 2-1000 ppm for most elements; and (iii) Near non-destructive elemental analysis method (about 1 g material). One important challenge to overcome is achieving high-resolution spectral analysis to quantitatively analyze all important fission products and actinides. Another important challenge is related to accessibility of molten salt, which is heated in a heavily insulated, remotely operated furnace in a high radiation environment with an argon atmosphere.« less

Recycle technology for recovering resources and products from waste printed circuit boards.

PubMed

Li, Jia; Lu, Hongzhou; Guo, Jie; Xu, Zhenming; Zhou, Yaohe

2007-03-15

The printed circuit board (PCB) contains nearly 28% metals that are abundant non-ferrous metals such as Cu, Al, Sn, etc. The purity of precious metals in PCBs is more than 10 times higher than that of rich-content minerals. Therefore, recycling of PCBs is an important subject not only from the treatment of waste but also from the recovery of valuable materials. Chemical and mechanical methods are two traditional recycling processes for waste PCBs. However, the prospect of chemical methods will be limited since the emission of toxic liquid or gas brings secondary pollution to the environment during the process. Mechanical processes, such as shape separation, jigging, density-based separation, and electrostatic separation have been widely utilized in the recycling industry. But, recycling of waste PCBs is only beginning. In this study, a total of 400 kg of waste PCBs was processed by a recycle technology without negative impact to the environment. The technology contained mechanical two-step crushing, corona electrostatic separating, and recovery. The results indicated that (i) two-step crushing was an effect process to strip metals from base plates completely; (ii) the size of particles between 0.6 and 1.2 mm was suitable for corona electrostatic separating during industrial application; and (iii) the nonmetal of waste PCBs attained 80% weight of a kind of nonmetallic plate that expanded the applying prospect of waste nonmetallic materials.

Dramatic Changes in Thermoelectric Power of Germanium under Pressure: Printing n–p Junctions by Applied Stress

PubMed Central

Korobeinikov, Igor V.; Morozova, Natalia V.; Shchennikov, Vladimir V.; Ovsyannikov, Sergey V.

2017-01-01

Controlled tuning the electrical, optical, magnetic, mechanical and other characteristics of the leading semiconducting materials is one of the primary technological challenges. Here, we demonstrate that the electronic transport properties of conventional single-crystalline wafers of germanium may be dramatically tuned by application of moderate pressures. We investigated the thermoelectric power (Seebeck coefficient) of p– and n–type germanium under high pressure to 20 GPa. We established that an applied pressure of several GPa drastically shifts the electrical conduction to p–type. The p–type conduction is conserved across the semiconductor-metal phase transition at near 10 GPa. Upon pressure releasing, germanium transformed to a metastable st12 phase (Ge-III) with n–type semiconducting conductivity. We proposed that the unusual electronic properties of germanium in the original cubic-diamond-structured phase could result from a splitting of the “heavy” and “light” holes bands, and a related charge transfer between them. We suggested new innovative applications of germanium, e.g., in technologies of printing of n–p and n–p–n junctions by applied stress. Thus, our work has uncovered a new face of germanium as a ‘smart’ material. PMID:28290495

Understanding conductivity anomalies in Cu(I)-based delafossite transparent conducting oxides: Theoretical insights.

PubMed

Scanlon, David O; Godinho, Kate G; Morgan, Benjamin J; Watson, Graeme W

2010-01-14

The Cu(I)-based delafossite structure, Cu(I)M(III)O(2), can accommodate a wide range of rare earth and transition metal cations on the M(III) site. Substitutional doping of divalent ions for these trivalent metals is known to produce higher p-type conductivity than that occurring in the undoped materials. However, an explanation of the conductivity anomalies observed in these p-type materials, as the trivalent metal is varied, is still lacking. In this article, we examine the electronic structure of Cu(I)M(III)O(2) (M(III)=Al,Cr,Sc,Y) using density functional theory corrected for on-site Coulomb interactions in strongly correlated systems (GGA+U) and discuss the unusual experimental trends. The importance of covalent interactions between the M(III) cation and oxygen for improving conductivity in the delafossite structure is highlighted, with the covalency trends found to perfectly match the conductivity trends. We also show that calculating the natural band offsets and the effective masses of the valence band maxima is not an ideal method to classify the conduction properties of these ternary materials.

Doorways III: Teacher Reference Materials. On School-Related Gender-Based Violence Prevention and Response

ERIC Educational Resources Information Center

US Agency for International Development, 2009

2009-01-01

The Doorways training program was designed by the U.S. Agency for International Development (USAID)-funded Safe Schools Program (Safe Schools) to enable teachers, community members and students to prevent and respond to school-related gender-based violence (SRGBV). This booklet, "Doorways III: Teacher Reference Materials on School-Related…

Directory of Mediated Instructional Materials.

ERIC Educational Resources Information Center

Mitchell, Louise, Ed.

Catalogued in this directory are all the audio tapes, video tapes, and films produced from 1964 through 1969 by the Evanston Township High School Faculty, its Title III staff, and its television staff in the course of its Title III project. These instructional materials are designed for secondary school students and cover almost all aspects of the…

15.3%-Efficient GaAsP Solar Cells on GaP/Si Templates

DOE PAGES

Vaisman, Michelle; Fan, Shizhao; Nay Yaung, Kevin; ...

2017-07-26

As single-junction Si solar cells approach their practical efficiency limits, a new pathway is necessary to increase efficiency in order to realize more cost-effective photovoltaics. Integrating III-V cells onto Si in a multijunction architecture is a promising approach that can achieve high efficiency while leveraging the infrastructure already in place for Si and III-V technology. In this Letter, we demonstrate a record 15.3%-efficient 1.7 eV GaAsP top cell on GaP/Si, enabled by recent advances in material quality in conjunction with an improved device design and a high-performance antireflection coating. Furthermore, we present a separate Si bottom cell with a 1.7more » eV GaAsP optical filter to absorb most of the visible light with an efficiency of 6.3%, showing the feasibility of monolithic III-V/Si tandems with >20% efficiency. Through spectral efficiency analysis, we also compare our results to previously published GaAsP and Si devices, projecting tandem GaAsP/Si efficiencies of up to 25.6% based on current state-of-the-art individual subcells. With the aid of modeling, we further illustrate a realistic path toward 30% GaAsP/Si tandems for high-efficiency, monolithically integrated photovoltaics.« less

Group III-arsenide-nitride long wavelength laser diodes

NASA Astrophysics Data System (ADS)

Coldren, Christopher W.

Semiconductor laser diodes transmitting data over silica optical fiber form the backbone of modern day communications systems, enabling terabit per second data transmission over hundreds to thousands of kilometers of distance. The wavelength of emission of the transmission semiconductor laser diode is a critical parameter that determines the performance of the communications system. In high performance fiber optic communications systems, lasers emitting at 1300nm and 1550nm are used because of the low loss and distortion properties of the fiber in these spectral windows. The available lasers today that operate in these fiber optic transmission windows suffer from high cost and poor performance under the typical environmental conditions and require costly and unreliable cooling systems. This dissertation presents work that demonstrates that it is possible to make lasers devices with 1300nm laser emission that are compatible with low cost and operation under extreme operating conditions. The key enabling technology developed is a novel semiconductor material based structure. A group III-Arsenide-Nitride quantum well structure was developed that can be grown expitaxially on GaAs substrates. The properties of this group III-Arsenide-Nitride structure allowed high performance edge emitting and vertical cavity surface emitting lasers to be fabricated which exhibited low threshold currents and low sensitivity to operating temperature.

Photochemistry of Fe(Iii)-Carboxylates in Polysaccharide-Based Materials with Tunable Mechanical Properties

NASA Astrophysics Data System (ADS)

Giammanco, Giuseppe E.

We present the formulation and study of light-responsive materials based on carboxylate-containing polysaccharides. The functional groups in these natural polymers allow for strong interactions with transition metal ions such as Fe(III). The known photochemistry of hydroxycarboxylic acids in natural waters inspired us in exploring the visible light induced photochemistry of the carboxylates in these polysaccharides when coordinated to Fe(III) ions. Described in this dissertation are the design and characterization of the Fe(III)-polysaccharide materials, specifically the mechanistic aspects of the photochemistry and the effects that these reactions have on the structure of the polymer materials. We present a study of the quantitative photochemistry of different polysaccharide systems, where the presence of uronic acids was important for the photoreaction to take place. Alginate (Alg), pectate (Pec), hyaluronic acid (Hya), xanthan gum (Xan), and a polysaccharide extracted from the Noni fruit (NoniPs), were among the natural uronic acid-containing polysaccharide (UCPS) systems we analyzed. Potato starch, lacking of uronate groups, did not present any photochemistry in the presence of Fe(III); however, we were able to induce a photochemical response in this polysaccharide upon chemical manipulation of its functional groups. Important structure-function relationships were drawn from this study. The uronate moiety present in these polysaccharides is then envisioned as a tool to induce response to light in a variety of materials. Following this approach, we report the formulation of materials for controlled drug release, able to encapsulate and release different drug models only upon illumination with visible light. Furthermore, hybrid hydrogels were prepared from UPCS and non-responsive polymers. Different properties of these materials could be tuned by controlling the irradiation time, intensity and location. These hybrid gels were evaluated as scaffolds for tissue engineering showing great promise, as changes in the behavior of the growing cells were observed as a result of the photochemical treatment of the material. We present these natural and readily available, polysaccharide-based, metal-coordination materials as convenient building blocks in the formulation of new stimuli responsive materials. The photochemical methods developed here can be used as convenient tools for creating advanced materials with tailored patterns and gradients of mechanical properties.

7 CFR 2.24 - Assistant Secretary for Administration.

Code of Federal Regulations, 2014 CFR

2014-01-01

... determining whether to continue, modify, or terminate an information technology program or project. (iii..., computer conferencing, televideo technologies, and other applications of office automation technology which... information technology system project managers in accordance with OMB policies. (D) Providing recommendations...

[Work and health status of workers of shoe manufacturing industries].

PubMed

Mironov, A I; Kirillov, V F; Bul'bulian, M A; Golubeva, A P; Kraeva, G K; Kuznetsova, A I; Nikolaeva, G M

2001-01-01

According to work conditions, severity and intensity, the main shoe-making occupations are assigned to III class of I-II jeopardy grade. If new technology applied, the work is assigned to I-II jeopardy class, being optimal--allowable. Increased mortality with liver cancer and lympholeucosis was revealed among workers contacting chloroprene.

78 FR 69683 - Agency Information Collection Activities: Submission for OMB Review; Comment Request; OAA Title...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-11-20

... Collection Activities: Submission for OMB Review; Comment Request; OAA Title III-E Evaluation AGENCY... to Older Americans Act (OAA) Title III-E Evaluation. DATES: Submit written or electronic comments on... information technology. The OAA Title III-E National Family Caregiver Support Program (NFCSP), with statutory...

Quarterly Report: Microchannel-Assisted Nanomaterial Deposition Technology for Photovoltaic Material Production

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palo, Daniel R.

2011-04-26

Quarterly report to ITP for Nanomanufacturing program. Report covers FY11 Q2. The primary objective of this project is to develop a nanomanufacturing process which will reduce the manufacturing energy, environmental discharge, and production cost associated with current nano-scale thin-film photovoltaic (PV) manufacturing approaches. The secondary objective is to use a derivative of this nanomanufacturing process to enable greener, more efficient manufacturing of higher efficiency quantum dot-based photovoltaic cells now under development. The work is to develop and demonstrate a scalable (pilot) microreactor-assisted nanomaterial processing platform for the production, purification, functionalization, and solution deposition of nanomaterials for photovoltaic applications. The highmore » level task duration is shown. Phase I consists of a pilot platform for Gen II PV films along with parallel efforts aimed at Gen III PV quantum dot materials. Status of each task is described.« less

Plasma-Enhanced Pulsed Laser Deposition of Wide Bandgap Nitrides for Space Power Applications

NASA Technical Reports Server (NTRS)

Triplett, G. E., Jr.; Durbin, S. M.

2004-01-01

The need for a reliable, inexpensive technology for small-scale space power applications where photovoltaic or chemical battery approaches are not feasible has prompted renewed interest in radioisotope-based energy conversion devices. Although a number of devices have been developed using a variety of semiconductors, the single most limiting factor remains the overall lifetime of the radioisotope battery. Recent advances in growth techniques for ultra-wide bandgap III-nitride semiconductors provide the means to explore a new group of materials with the promise of significant radiation resistance. Additional benefits resulting from the use of ultra-wide bandgap materials include a reduction in leakage current and higher operating voltage without a loss of energy transfer efficiency. This paper describes the development of a novel plasma-enhanced pulsed laser deposition system for the growth of cubic boron nitride semiconducting thin films, which will be used to construct pn junction devices for alphavoltaic applications.

Integrated Approach to Repair and Seismic Strengthening of Mustafa Pasha Mosque in Skopje

NASA Astrophysics Data System (ADS)

Sendova, Veronika; Gavrilovic, Predrag; Stojanoski, Blagojce

2008-07-01

Mustafa Pasha's Mosque is one of the biggest and the best preserved monuments of the Ottoman sacral architecture in Skopje and the Balkan. As a cultural historic monument of an extraordinary importance for the city of Skopje and Republic of Macedonia, it is under protection of the Law on Protection of Cultural Heritage. IZIIS is currently elaborating a project on repair and strengthening of Mustafa Pasha's mosque. Respecting the modern requirements in protection of historical monuments, as is the main principles of seismic strengthening are: application of new technologies and materials, reversibility and invisibility of the applied technique. The concept of structural strengthening and repair aimed at reaching the designed level of earthquake protection has been selected based on: (i) investigations of the soil conditions, (ii) investigations of the characteristics of the built-in materials, (iii) investigation of the main dynamic characteristics, as well as (iv) previous experimental investigation of the mosque model.

Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices

NASA Astrophysics Data System (ADS)

Fujita, Shizuo; Oda, Masaya; Kaneko, Kentaro; Hitora, Toshimi

2016-12-01

The recent progress and development of corundum-structured III-oxide semiconductors are reviewed. They allow bandgap engineering from 3.7 to ∼9 eV and function engineering, leading to highly durable electronic devices and deep ultraviolet optical devices as well as multifunctional devices. Mist chemical vapor deposition can be a simple and safe growth technology and is advantageous for reducing energy and cost for the growth. This is favorable for the wide commercial use of devices at low cost. The III-oxide semiconductors are promising candidates for new devices contributing to sustainable social, economic, and technological development for the future.

PREFACE: III All-Russian Scientific and Practical Conference on Innovations in Non-Destructive Testing (SibTest 2015)

NASA Astrophysics Data System (ADS)

2016-01-01

This issue of the journal is devoted to the research and studies presented at the III All-Russian Scientific and Practical Conference on Innovations in Non-Destructive Testing SibTest. The conference was held in Altai, Russia, on 27-31 July 2015. The conference brought together experts from different countries and organizations who had a great opportunity to share knowledge during oral and poster presentations and to initiate discussions on topics that are of interest to the conference attendees. The conference aimed to discuss innovative methods and the application of advanced technologies in non-destructive testing. The conference also attempted to bring together university, academic and industrial science, to expand the co-operation of scientists from different countries in research and development and the commercialization of innovative technologies in non-destructive testing. The key themes of the conference were: ultrasonic and acoustic testing; electromagnetic and thermal testing; various types of radiation non-destructive testing; passive and active testing techniques. The conference organizers are the Institute of Non-Destructive Testing, Tomsk Polytechnic University, with the assistance of the Russian Society for Non-Destructive Testing and Technical Diagnostics, Institute of Strength Physics and Materials Science, Siberian Branch of the Russian Academy of Sciences, National Research Tomsk State University, Moscow State Institute of Radio Engineering, Electronics and Automation.

49 CFR 572.140 - Incorporation by reference.

Code of Federal Regulations, 2012 CFR

2012-10-01

... Child Crash Test Dummy, Alpha Version § 572.140 Incorporation by reference. (a) The following materials... entitled, “Parts List and Drawings, Subpart P Hybrid III 3-year-old child crash test dummy, (H-III3C, Alpha..., Disassembly and Inspection (PADI), Subpart P, Hybird III 3-year-old Child Crash Test Dummy, (H-III3C, Alpha...

49 CFR 572.140 - Incorporation by reference.

Code of Federal Regulations, 2011 CFR

2011-10-01

... Child Crash Test Dummy, Alpha Version § 572.140 Incorporation by reference. (a) The following materials... entitled, “Parts List and Drawings, Subpart P Hybrid III 3-year-old child crash test dummy, (H-III3C, Alpha..., Disassembly and Inspection (PADI), Subpart P, Hybird III 3-year-old Child Crash Test Dummy, (H-III3C, Alpha...

49 CFR 572.140 - Incorporation by reference.

Code of Federal Regulations, 2014 CFR

2014-10-01

... Child Crash Test Dummy, Alpha Version § 572.140 Incorporation by reference. (a) The following materials... entitled, “Parts List and Drawings, Subpart P Hybrid III 3-year-old child crash test dummy, (H-III3C, Alpha..., Disassembly and Inspection (PADI), Subpart P, Hybird III 3-year-old Child Crash Test Dummy, (H-III3C, Alpha...

49 CFR 572.140 - Incorporation by reference.

Code of Federal Regulations, 2013 CFR

2013-10-01

... Child Crash Test Dummy, Alpha Version § 572.140 Incorporation by reference. (a) The following materials... entitled, “Parts List and Drawings, Subpart P Hybrid III 3-year-old child crash test dummy, (H-III3C, Alpha..., Disassembly and Inspection (PADI), Subpart P, Hybird III 3-year-old Child Crash Test Dummy, (H-III3C, Alpha...

49 CFR 572.140 - Incorporation by reference.

Code of Federal Regulations, 2010 CFR

2010-10-01

... Child Crash Test Dummy, Alpha Version § 572.140 Incorporation by reference. (a) The following materials... entitled, “Parts List and Drawings, Subpart P Hybrid III 3-year-old child crash test dummy, (H-III3C, Alpha..., Disassembly and Inspection (PADI), Subpart P, Hybird III 3-year-old Child Crash Test Dummy, (H-III3C, Alpha...

Workshop Report on Additive Manufacturing for Large-Scale Metal Components - Development and Deployment of Metal Big-Area-Additive-Manufacturing (Large-Scale Metals AM) System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Babu, Sudarsanam Suresh; Love, Lonnie J.; Peter, William H.

Additive manufacturing (AM) is considered an emerging technology that is expected to transform the way industry can make low-volume, high value complex structures. This disruptive technology promises to replace legacy manufacturing methods for the fabrication of existing components in addition to bringing new innovation for new components with increased functional and mechanical properties. This report outlines the outcome of a workshop on large-scale metal additive manufacturing held at Oak Ridge National Laboratory (ORNL) on March 11, 2016. The charter for the workshop was outlined by the Department of Energy (DOE) Advanced Manufacturing Office program manager. The status and impact ofmore » the Big Area Additive Manufacturing (BAAM) for polymer matrix composites was presented as the background motivation for the workshop. Following, the extension of underlying technology to low-cost metals was proposed with the following goals: (i) High deposition rates (approaching 100 lbs/h); (ii) Low cost (<$10/lbs) for steel, iron, aluminum, nickel, as well as, higher cost titanium, (iii) large components (major axis greater than 6 ft) and (iv) compliance of property requirements. The above concept was discussed in depth by representatives from different industrial sectors including welding, metal fabrication machinery, energy, construction, aerospace and heavy manufacturing. In addition, DOE’s newly launched High Performance Computing for Manufacturing (HPC4MFG) program was reviewed. This program will apply thermo-mechanical models to elucidate deeper understanding of the interactions between design, process, and materials during additive manufacturing. Following these presentations, all the attendees took part in a brainstorming session where everyone identified the top 10 challenges in large-scale metal AM from their own perspective. The feedback was analyzed and grouped in different categories including, (i) CAD to PART software, (ii) selection of energy source, (iii) systems development, (iv) material feedstock, (v) process planning, (vi) residual stress & distortion, (vii) post-processing, (viii) qualification of parts, (ix) supply chain and (x) business case. Furthermore, an open innovation network methodology was proposed to accelerate the development and deployment of new large-scale metal additive manufacturing technology with the goal of creating a new generation of high deposition rate equipment, affordable feed stocks, and large metallic components to enhance America’s economic competitiveness.« less

Polycrystalline Thin Film Photovoltaics: Research, Development, and Technologies: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ullal, H. S.; Zweibel, K.; von Roedern, B.

2002-05-01

II-VI binary thin-film solar cells based on cadmium telluride (CdTe) and I-III-VI ternary thin-film solar cells based on copper indium diselenide (CIS) and related materials have been the subject of intense research and development in the past few years. Substantial progress has been made thus far in the area of materials research, device fabrication, and technology development, and numerous applications based on CdTe and CIS have been deployed worldwide. World record efficiency of 16.5% has been achieved by NREL scientists for a thin-film CdTe solar cell using a modified device structure. Also, NREL scientists achieved world-record efficiency of 21.1% formore » a thin-film CIGS solar cell under a 14X concentration and AM1.5 global spectrum. When measured under a AM1.5 direct spectrum, the efficiency increases to 21.5%. Pathways for achieving 25% efficiency for tandem polycrystalline thin-film solar cells are elucidated. R&D issues relating to CdTe and CIS are reported in this paper, such as contact stability and accelerated life testing in CdTe, and effects of moisture ingress in thin-film CIS devices. Substantial technology development is currently under way, with various groups reporting power module efficiencies in the range of 7.0% to 12.1% and power output of 40.0 to 92.5 W. A number of lessons learned during the scale-up activities of the technology development for fabrication of thin-film power modules are discussed. The major global players actively involved in the technology development and commercialization efforts using both rigid and flexible power modules are highlighted.« less

III-V semiconductor solid solution single crystal growth

NASA Technical Reports Server (NTRS)

Gertner, E. R.

1982-01-01

The feasibility and desirability of space growth of bulk IR semiconductor crystals for use as substrates for epitaxial IR detector material were researched. A III-V ternary compound (GaInSb) and a II-VI binary compound were considered. Vapor epitaxy and quaternary epitaxy techniques were found to be sufficient to permit the use of ground based binary III-V crystals for all major device applications. Float zoning of CdTe was found to be a potentially successful approach to obtaining high quality substrate material, but further experiments were required.

Resources in Technology III.

ERIC Educational Resources Information Center

Ritz, John M.; And Others

This document--intended to help technology education teachers plan their classroom curriculum for secondary school and college students--contains units on exploring high-impact technology, microcomputers as technological tools, integrated manufacturing systems (the future of design and production), the role of robotics in integrated manufacturing…

Communications technology

NASA Astrophysics Data System (ADS)

Sokoloski, Martin M.

1988-09-01

The objective of the Communications Technology Program is to enable data transmission to and from low Earth orbit, geostationary orbit, and solar and deep space missions. This can be achieved by maintaining an effective, balances effort in basic, applied, and demonstration prototype communications technology through work in theory, experimentation, and components. The program consists of three major research and development discipline areas which are: microwave and millimeter wave tube components; solid state monolithic integrated circuit; and free space laser communications components and devices. The research ranges from basic research in surface physics (to study the mechanisms of surface degradation from under high temperature and voltage operating conditions which impacts cathode tube reliability and lifetime) to generic research on the dynamics of electron beams and circuits (for exploitation in various micro- and millimeter wave tube devices). Work is also performed on advanced III-V semiconductor materials and devices for use in monolithic integrated analog circuits (used in adaptive, programmable phased arrays for microwave antenna feeds and receivers) - on the use of electromagnetic theory in antennas and on technology necessary for eventual employment of lasers for free space communications for future low earth, geostationary, and deep space missions requiring high data rates with corresponding directivity and reliability.

Communications technology

NASA Technical Reports Server (NTRS)

Sokoloski, Martin M.

1988-01-01

The objective of the Communications Technology Program is to enable data transmission to and from low Earth orbit, geostationary orbit, and solar and deep space missions. This can be achieved by maintaining an effective, balances effort in basic, applied, and demonstration prototype communications technology through work in theory, experimentation, and components. The program consists of three major research and development discipline areas which are: microwave and millimeter wave tube components; solid state monolithic integrated circuit; and free space laser communications components and devices. The research ranges from basic research in surface physics (to study the mechanisms of surface degradation from under high temperature and voltage operating conditions which impacts cathode tube reliability and lifetime) to generic research on the dynamics of electron beams and circuits (for exploitation in various micro- and millimeter wave tube devices). Work is also performed on advanced III-V semiconductor materials and devices for use in monolithic integrated analog circuits (used in adaptive, programmable phased arrays for microwave antenna feeds and receivers) - on the use of electromagnetic theory in antennas and on technology necessary for eventual employment of lasers for free space communications for future low earth, geostationary, and deep space missions requiring high data rates with corresponding directivity and reliability.

Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits

NASA Astrophysics Data System (ADS)

Strangio, S.; Palestri, P.; Lanuzza, M.; Esseni, D.; Crupi, F.; Selmi, L.

2017-02-01

In this work, a benchmark for low-power digital applications of a III-V TFET technology platform against a conventional CMOS FinFET technology node is proposed. The analysis focuses on full-adder circuits, which are commonly identified as representative of the digital logic environment. 28T and 24T topologies, implemented in complementary-logic and transmission-gate logic, respectively, are investigated. Transient simulations are performed with a purpose-built test-bench on each single-bit full adder solution. The extracted delays and energy characteristics are post-processed and translated into figures-of-merit for multi-bit ripple-carry-adders. Trends related to the different full-adder implementations (for the same device technology platform) and to the different technology platforms (for the same full-adder topology) are presented and discussed.

Electrodeposition of Metal Matrix Composites and Materials Characterization for Thin-Film Solar Cells

DTIC Science & Technology

2017-12-04

34High-Concentration III-V Multijunction Solar Cells," 2017, <http://www.nrel.gov/ pv /high-concentration-iii-v-multijunction- solar - cells.html>. O. K...AFRL-RV-PS- AFRL-RV-PS- TR-2017-0174 TR-2017-0174 ELECTRODEPOSITION OF METAL MATRIX COMPOSITES AND MATERIALS CHARACTERIZATION FOR THIN-FILM SOLAR ...0242 Electrodeposition of Metal Matrix Composites and Materials Characterization for Thin-Film Solar Cells 5b. GRANT NUMBER 5c. PROGRAM ELEMENT

Dynamic properties of III-V polytypes from density-functional theory

NASA Astrophysics Data System (ADS)

Benyahia, N.; Zaoui, A.; Madouri, D.; Ferhat, M.

2017-03-01

The recently discovered hexagonal wurtzite phase of several III-V nanowires opens up strong opportunity to engineer optoelectronic and transport properties of III-V materials. Herein, we explore the dynamical and dielectric properties of cubic (3C) and wurtzite (2H) III-V compounds (AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, and InSb). For cubic III-V compounds, our calculated phonon frequencies agree well with neutron diffraction and Raman-scattering measurements. In the case of 2H III-V materials, our calculated phonon modes at the zone-center Γ point are in distinguished agreement with available Raman-spectroscopy measurements of wurtzite GaAs, InP, GaP, and InAs nanowires. Particularly, the "fingerprint" of the wurtzite phase, which is our predicted E2(high) phonon mode, at 261 cm-1(GaAs), 308 cm-1(InP), 358 cm-1(GaP), and 214 cm-1(InAs) matches perfectly the respective Raman values of 258 cm-1, 306.4 cm-1, 353 cm-1, and 213.7 cm-1 for GaAs, InP, GaP, and InAs. Moreover, the dynamic charges and high-frequency dielectric constants are predicted for III-V materials in both cubic (3C) and hexagonal (2H) crystal polytypes. It is found that the dielectric properties of InAs and InSb contrast markedly from those of other 2H III-V compounds. Furthermore, InAs and InSb evidence relative strong anisotropy in their dielectric constants and Born effective charges, whereas GaP evinces the higher Born effective charge anisotropy of 2H III-V compounds.

Masonry Specialist III & IV, 3-20. Military Curriculum Materials for Vocational and Technical Education.

ERIC Educational Resources Information Center

Ohio State Univ., Columbus. National Center for Research in Vocational Education.

These military-developed curriculum materials consist of a course description, plan of instruction, study guides, and workbooks for use in training masonry specialists. Covered in the course blocks are laying concrete blocks, stone, and bricks as well as plaster, stucco, and tile. Course block III, on laying concrete blocks, stone, and bricks,…

Plumbing Specialist II & III, 3-22. Military Curriculum Materials for Vocational and Technical Education.

ERIC Educational Resources Information Center

Ohio State Univ., Columbus. National Center for Research in Vocational Education.

These military-developed curriculum materials consist of a course description, course chart, plan of instruction, lesson plans, study guides, and workbooks for use in training plumbing specialists II and III. Covered in the course blocks are building waste systems and exterior and interior supply systems. Course block II, on building waste…

49 CFR 173.127 - Class 5, Division 5.1-Definition and assignment of packing groups.

Code of Federal Regulations, 2012 CFR

2012-10-01

...) Packing Group II, any material which exhibits a mean pressure rise time less than or equal to the pressure... Packing Group I are not met. (iii) Packing Group III, any material which exhibits a mean pressure rise... packing groups. 173.127 Section 173.127 Transportation Other Regulations Relating to Transportation...

49 CFR 173.127 - Class 5, Division 5.1-Definition and assignment of packing groups.

Code of Federal Regulations, 2014 CFR

2014-10-01

...) Packing Group II, any material which exhibits a mean pressure rise time less than or equal to the pressure... Packing Group I are not met. (iii) Packing Group III, any material which exhibits a mean pressure rise... packing groups. 173.127 Section 173.127 Transportation Other Regulations Relating to Transportation...

Sociomateriality in medical practice and learning: attuning to what matters.

PubMed

Fenwick, Tara

2014-01-01

In current debates about professional practice and education, increasing emphasis is placed on understanding learning as a process of ongoing participation rather than one of acquiring knowledge and skills. However, although this socio-cultural view is important and useful, issues have emerged in studies of practice-based learning that point to certain oversights. Three issues are described here: (i) the limited attention paid to the importance of materiality - objects, technologies, nature, etc.-- in questions of learning; (ii) the human-centric view of practice that fails to note the relations among social and material forces, and (iii) the conflicts between ideals of evidence-based standardised models and the sociomaterial contingencies of clinical practice. It is argued here that a socio-material approach to practice and learning offers important insights for medical education. This view is in line with a growing field of research in the materiality of everyday life, which embraces wide-ranging families of theory that can be only briefly mentioned in this short paper. The main premise they share is that social and material forces, culture, nature and technology, are enmeshed in everyday practice. Objects and humans act upon one another in ways that mutually transform their characteristics and activity. Examples from research in medical practice show how materials actively influence clinical practice, how learning itself is a material matter, how protocols are in fact temporary sociomaterial achievements, and how practices form unique and sometimes conflicting sociomaterial worlds, with diverse diagnostic and treatment approaches for the same thing. This discussion concludes with implications for learning in practice. What is required is a shift from an emphasis on acquiring knowledge to participating more wisely in particular situations. This focus is on learning how to attune to minor material fluctuations and surprises, how to track one's own and others' effects on 'intra-actions' and emerging effects, and how to improvise solutions. © 2013 John Wiley & Sons Ltd.

Installation Restoration Program Records Search for Westover Air Force Base, Massachusetts.

DTIC Science & Technology

1982-04-01

Phase III (not part of this contract) consists of a technology base development study to support the development of project plans for controlling...determine the extent and magnitude of the contaminant migration. Phase III (not part of this contract) consists of a technology base development study to...number of vegetation studies have attempted to classify the potential climax vegetation within the region of Westover AFB (Braun, 1972; Kuchler, 1975

Round robin test on the measurement of the specific heat of solar salt

NASA Astrophysics Data System (ADS)

Muñoz-Sánchez, Belén; Nieto-Maestre, Javier; González-Aguilar, José; Julia, José Enrique; Navarrete, Nuria; Faik, Abdessamad; Bauer, Thomas; Bonk, Alexander; Navarro, María Elena; Ding, Yulong; Uranga, Nerea; Veca, Elisabetta; Sau, Salvatore; Giménez, Pau; García, Pierre; Burgaleta, Juan Ignacio

2017-06-01

Solar salt (SS), a well-known non-eutectic mixture of sodium nitrate (60% w/w) and potassium nitrate (40% w/w), is commonly used either as Thermal Energy Storage (TES) material (double tank technology) or Heat Transfer Fluid (HTF) (solar tower) in modern CSP plants worldwide. The specific heat (cp, kJ kg-1 °C-1) of SS is a very important property in order to support the design of new CSP Plants or develop novel materials based on SS. A high scientific effort has been dedicated to perform a suitable thermophysical characterization of this material. However, there is still a great discrepancy among the cp values reported by different authors1. These differences may be due to either experimental errors (random or systematic) or divergences in the starting material (grade of purity, presence of impurities and/or water). In order to avoid the second source of uncertainty (the starting material), a Round Robin Test (RRT) was proposed starting from a common material. In this way, the different methods from each laboratory could be compared. The study should lay the foundations for the establishment of a systematic procedure for the measurement of the specific heat of this kind of materials. Nine institutions, research centers and companies, accepted the proposal and are contributing with their results. The initiative was organized within the Workshop SolarPACES Task III - Material activity.

Solar Thermoelectricity via Advanced Latent Heat Storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Olsen, Michele L.; Rea, J.; Glatzmaier, Greg C.

2016-05-31

We report on a new modular, dispatchable, and cost-effective solar electricity-generating technology. Solar ThermoElectricity via Advanced Latent heat Storage (STEALS) integrates several state-of-the-art technologies to provide electricity on demand. In the envisioned STEALS system, concentrated sunlight is converted to heat at a solar absorber. The heat is then delivered to either a thermoelectric (TE) module for direct electricity generation, or to charge a phase change material for thermal energy storage, enabling subsequent generation during off-sun hours, or both for simultaneous electricity production and energy storage. The key to making STEALS a dispatchable technology lies in the development of a 'thermalmore » valve,' which controls when heat is allowed to flow through the TE module, thus controlling when electricity is generated. The current project addresses each of the three major subcomponents, (i) the TE module, (ii) the thermal energy storage system, and (iii) the thermal valve. The project also includes system-level and techno- economic modeling of the envisioned integrated system and will culminate in the demonstration of a laboratory-scale STEALS prototype capable of generating 3kWe.« less

Solar thermoelectricity via advanced latent heat storage

NASA Astrophysics Data System (ADS)

Olsen, M. L.; Rea, J.; Glatzmaier, G. C.; Hardin, C.; Oshman, C.; Vaughn, J.; Roark, T.; Raade, J. W.; Bradshaw, R. W.; Sharp, J.; Avery, A. D.; Bobela, D.; Bonner, R.; Weigand, R.; Campo, D.; Parilla, P. A.; Siegel, N. P.; Toberer, E. S.; Ginley, D. S.

2016-05-01

We report on a new modular, dispatchable, and cost-effective solar electricity-generating technology. Solar ThermoElectricity via Advanced Latent heat Storage (STEALS) integrates several state-of-the-art technologies to provide electricity on demand. In the envisioned STEALS system, concentrated sunlight is converted to heat at a solar absorber. The heat is then delivered to either a thermoelectric (TE) module for direct electricity generation, or to charge a phase change material for thermal energy storage, enabling subsequent generation during off-sun hours, or both for simultaneous electricity production and energy storage. The key to making STEALS a dispatchable technology lies in the development of a "thermal valve," which controls when heat is allowed to flow through the TE module, thus controlling when electricity is generated. The current project addresses each of the three major subcomponents, (i) the TE module, (ii) the thermal energy storage system, and (iii) the thermal valve. The project also includes system-level and techno- economic modeling of the envisioned integrated system and will culminate in the demonstration of a laboratory-scale STEALS prototype capable of generating 3kWe.

2001 NASA Seal/secondary Air System Workshop, Volume 1. Volume 1

NASA Technical Reports Server (NTRS)

Steinetz, Bruce M. (Editor); Hendricks, Robert C. (Editor)

2002-01-01

The 2001 NASA Seal/Secondary Air System Workshop covered the following topics: (i) overview of NASA's Vision for 21st Century Aircraft; (ii) overview of NASA-sponsored Ultra-Efficient Engine Technology (UEET); (iii) reviews of sealing concepts, test results, experimental facilities, and numerical predictions; and (iv) reviews of material development programs relevant to advanced seals development. The NASA UEET overview illustrates for the reader the importance of advanced technologies, including seals, in meeting future turbine engine system efficiency and emission goals. The NASA UEET program goals include an 8-to 15-percent reduction in fuel burn, a 15-percent reduction in CO2, a 70-percent reduction in NOx, CO, and unburned hydrocarbons, and a 30-dB noise reduction relative to program baselines. The workshop also covered several programs NASA is funding to investigate advanced reusable space vehicle technologies (X-38) and advanced space ram/scramjet propulsion systems. Seal challenges posed by these advanced systems include high-temperature operation, resiliency at the operating temperature to accommodate sidewall flexing, and durability to last many missions.

Evaluation of InGaAS array detector suitability to space environment

NASA Astrophysics Data System (ADS)

Tauziede, L.; Beulé, K.; Boutillier, M.; Bernard, F.; Reverchon, J.-L.; Buffaz, A.

2017-11-01

InGaAs material has a natural cutoff wavelength of 1.65µm so it is naturally suitable for detection in Short Wavelength InfraRed (SWIR) spectral range. Regarding Earth Observation Spacecraft missions this spectral range can be used for the CO2 concentration measurements in the atmosphere. CNES (French Space agency) is studying a new mission, Microcarb with a spectral band centered on 1.6µm wavelength. InGaAs detector looks attractive for space application because its low dark current allows high temperature operation, reducing by the way the needed instrument resources. The Alcatel Thales III-VLab group has developed InGaAs arrays technology (320x256 & 640x512) that has been studied by CNES, using internal facilities. Performance tests and technological evaluation were performed on a 320x256 pixels array with a pitch of 30µm. The aim of this evaluation was to assess this new technology suitability for space applications. The carried out test plan includes proton radiations with Random Telegraph Signal (RTS) study, operating lifetest and evolution of performances as a function of the operating temperature.

Operation and Development Status of the Spacecraft Fire Experiments (Saffire)

NASA Technical Reports Server (NTRS)

Ruff, Gary A.; Urban, David L.

2016-01-01

Since 2012, a series of Spacecraft Fire Experiments (Saffire) have been under development by the Spacecraft Fire Safety Demonstration (SFS Demo) project, funded by NASA's Advanced Exploration Systems Division. The overall objective of this project is to reduce the uncertainty and risk associated with the design of spacecraft fire safety systems for NASA's exploration missions. The approach to achieving this goal has been to define, develop, and conduct experiments that address gaps in spacecraft fire safety knowledge and capabilities identified by NASA's Fire Safety System Maturation Team. The Spacecraft Fire Experiments (Saffire-I, -II, and -III) are material flammability tests at length scales that are realistic for a spacecraft fire in low-gravity. The specific objectives of these three experiments are to (1) determine how rapidly a large scale fire grows in low-gravity and (2) investigate the low-g flammability limits compared to those obtained in NASA's normal gravity material flammability screening test. The experiments will be conducted in Orbital ATK's Cygnus vehicle after it has unberthed from the International Space Station. The tests will be fully automated with the data downlinked at the conclusion of the test before the Cygnus vehicle reenters the atmosphere. This paper discusses the status of the Saffire-I, II, and III experiments followed by a review of the fire safety technology gaps that are driving the development of objectives for the next series of experiments, Saffire-IV, V, and VI.

New polymorphs of 9-nitro-camptothecin prepared using a supercritical anti-solvent process.

PubMed

Huang, Yinxia; Wang, Hongdi; Liu, Guijin; Jiang, Yanbin

2015-12-30

Recrystallization and micronization of 9-nitro-camptothecin (9-NC) has been investigated using the supercritical anti-solvent (SAS) technology in this study. Five operating factors, i.e., the type of organic solvent, the concentration of 9-NC in the solution, the flow rate of 9-NC solution, the precipitation pressure and the temperature, were optimized using a selected OA16 (4(5)) orthogonal array design and a series of characterizations were performed for all samples. The results showed that the processed 9-NC particles exhibited smaller particle size and narrower particle size distribution as compared with 9-NC raw material (Form I), and the optimum micronization conditions for preparing 9-NC with minimum particle size were determined by variance analysis, where the solvent plays the most important role in the formation and transformation of polymorphs. Three new polymorphic forms (Form II, III and IV) of 9-NC, which present different physicochemical properties, were generated after the SAS process. The predicted structures of the 9-NC crystals, which were consistent with the experiments, were performed from their experimental XRD data by the direct space approach using the Reflex module of Materials Studio. Meanwhile, the optimal sample (Form III) was proved to have higher cytotoxicity against the cancer cells, which suggested the therapeutic efficacy of 9-NC is polymorph-dependent. Copyright © 2015 Elsevier B.V. All rights reserved.

REMEDIATION TECHNOLOGY EVALUATION AT THE GILT EDGE MINE, SOUTH DAKOTA

EPA Science Inventory

This document reports the findings of the Mine Waste Technology Program's Activity III, Project 29,The Remediation Technology Evaluation Project at the Gilt Edge Mine, S.D. This project consisted of evaluating three emerging acidic waste rock stabilization technologies and compar...

Method of carbon chain extension using novel aldol reaction

DOEpatents

Silks, Louis A; Gordon, John C; Wu, Ruilan; Hanson, Susan Kloek

2013-07-30

Method of producing C.sub.8-C.sub.15 hydrocarbons. comprising providing a ketone starting material; providing an aldol starting material comprising chloromethylfurfural; mixing the ketone starting material and the aldol starting material in a reaction in the presence of a proline-containing catalyst selected from the group consisting of Zn(Pro).sub.2, Yb(Pro).sub.3, and combinations thereof, or a catalyst having one of the structures (I), (II) or (III), and in the presence of a solvent, wherein the solvent comprises water and is substantially free of organic solvents, where (I), (II) and (III) respectively are: ##STR00001## where R.sub.1 is a C.sub.1-C.sub.6 alkyl moiety, X=(OH) and n=2. ##STR00002## In (III), X may be CH.sub.2, sulfur or selenium, M may be Zn, Mg, or a lanthanide, and R.sub.1 and R.sub.2 each independently may be a methyl, ethyl, phenyl moiety.

Method of carbon chain extension using novel aldol reaction

DOEpatents

Silks, Louis A; Gordon, John C; Wu, Ruilan; Hangson, Susan Kloek

2013-08-13

Method of producing C.sub.8-C.sub.15 hydrocarbons comprising providing a ketone starting material; providing an aldol starting material comprising hydroxymethylfurfural; mixing the ketone starting material and the aldol starting material in a reaction in the presence of a proline-containing catalyst selected from the group consisting of Zn(Pro).sub.2, Yb(Pro).sub.2, and combinations thereof, or a catalyst having one of the structures (I), (II) or (III), and in the presence of a solvent, wherein the solvent comprises water and is substantially free of organic solvents, where (I), (II) and (III) respectively are: ##STR00001## where R.sub.1 is a C.sub.1-C.sub.6 alkyl moiety, X=(OH) and n=2. ##STR00002## In (III), X may be CH.sub.2, sulfur or selenium, M may be Zn, Mg, or a lanthanide, and R.sub.1 and R.sub.2 each independently may be a methyl, ethyl, phenyl moiety.

Application of SBA-15 in Adsorption-Fenton Oxidation Process for Simultaneous Remediation of Dehp and As(iii)

NASA Astrophysics Data System (ADS)

Latorre, I.; Hwang, S.

2013-12-01

Di-2-ethylhexyl phthalate (DEHP) has been widely used as plasticizer in the manufacturing of polymeric materials to enhance flexibility, transparency and softness, particularly, in polyvinyl chloride (PVC) production. Several studies elucidated that DEHP could be linked to hepatocellular tumors and pre-term birth and may be a developmental and reproductive toxicant. Arsenic (As) contamination has been widespread in the environment and because of its toxicity and prevalence in nature; it also has become a significant environmental health concern. Most solid waste materials containing DEHP and As(III) are disposed of in landfills and may migrate to groundwater and soil environments representing a threat to human receptors. Therefore, the application of adsorption-Fenton oxidation process with Fe adsorbed to SBA-15 matrix was assessed for simultaneous remediation of DEHP and As(III). Three sequences were run to assess the regeneration efficiency of the SBA-15. A response surface methodology was employed to optimize adsorption and Fenton regeneration. Adsorption optimization was evaluated with regard to SBA-15 doses and the extent of As(III) and Fe concentrations. Optimization of Fenton regeneration, in addition, assessed initial H2O2 concentration. Global optimization for maximum reduction of DEHP and As(III) was performed by D-Optimal. Highest adsorption of DEHP (90-95%) and As (40-95%) into the SBA-15 was predicted at 1.16 mM Fe, 18.74 mg SBA-15 and 3.71 mg/L As(III). Highest reduction of As (78-99%) and DEHP (90-97%) was predicted with 0.50 mM Fe, 22 mg SBA-15, 3.02 mg/L As(III) and 22.50 mM H2O2. Global optimal treatments were validated and SBA-15 regenerated material was characterized via SEM and XPS. The efficiency of DEHP and As(III) remediation by adsorption-Fenton oxidation process, applying optimal treatment combinations, was evaluated using leachate from a lab scale bioreactor monofill (i.e., filled with PVC materials). Capability of As(III) and DEHP adsorption into SBA-15 was affected by the preferentiality adsorption of Fe and other compounds present in the monofill leachate.

Investigation of the abnormal Zn diffusion phenomenon in III-V compound semiconductors induced by the surface self-diffusion of matrix atoms

NASA Astrophysics Data System (ADS)

Tang, Liangliang; Xu, Chang; Liu, Zhuming

2017-01-01

Zn diffusion in III-V compound semiconductorsare commonly processed under group V-atoms rich conditions because the vapor pressure of group V-atoms is relatively high. In this paper, we found that group V-atoms in the diffusion sources would not change the shaped of Zn profiles, while the Zn diffusion would change dramatically undergroup III-atoms rich conditions. The Zn diffusions were investigated in typical III-V semiconductors: GaAs, GaSb and InAs. We found that under group V-atoms rich or pure Zn conditions, the double-hump Zn profiles would be formed in all materials except InAs. While under group III-atoms rich conditions, single-hump Zn profiles would be formed in all materials. Detailed diffusion models were established to explain the Zn diffusion process; the surface self-diffusion of matrix atoms is the origin of the abnormal Zn diffusion phenomenon.

High efficiency III-nitride light-emitting diodes

DOEpatents

Crawford, Mary; Koleske, Daniel; Cho, Jaehee; Zhu, Di; Noemaun, Ahmed; Schubert, Martin F; Schubert, E. Fred

2013-05-28

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

Workshop III: Future Directions for Thin Films Workshop at SPRAT XIX

NASA Technical Reports Server (NTRS)

Dickman, John E.; McNatt, Jeremiah S.

2007-01-01

The SPRAT conference series at NASA Glenn Research Center has devoted a workshop to the topic of thin-film solar cell technology and potential aerospace applications. With the advent of aerospace applications requiring very-high, mass, specific power, there has been a renewed interest in thin film materials and solar cells. Aerospace applications such as station-keeping for high-altitude airships, space solar power, lunar and planetary surface power, and solar electric propulsion would be enhanced or enabled by the development of flexible, very-high, mass specific power thin film arrays. To initiate discussion, a series of questions were asked of the attendees. These questions, three generated by the group, and the attendees comments follow.

Laboratory determination of migration of Eu(III) in compacted bentonite-sand mixtures as buffer/backfill material for high-level waste disposal.

PubMed

Zhou, Lang; Zhang, Huyuan; Yan, Ming; Chen, Hang; Zhang, Ming

2013-12-01

For the safety assessment of geological disposal of high-level radioactive waste (HLW), the migration of Eu(III) through compacted bentonite-sand mixtures was measured under expected repository conditions. Under the evaluated conditions, advection and dispersion is the dominant migration mechanism. The role of sorption on the retardation of migration was also evaluated. The hydraulic conductivities of compacted bentonite-sand mixtures were K=2.07×10(-10)-5.23×10(-10)cm/s, The sorption and diffusion of Eu(III) were examined using a flexible wall permeameter for a solute concentration of 2.0×10(-5)mol/l. The effective diffusion coefficients and apparent diffusion coefficients of Eu(III) in compacted bentonite-sand mixtures were in the range of 1.62×10(-12)-4.87×10(-12)m(2)/s, 1.44×10(-14)-9.41×10(-14)m(2)/s, respectively, which has a very important significance to forecast the relationship between migration length of Eu(III) in buffer/backfill material and time and provide a reference for the design of buffer/backfill material for HLW disposal in China. © 2013 Elsevier Ltd. All rights reserved.

Computer-aided design comparisons of monolithic and hybrid MEM-tunable VCSELs

NASA Astrophysics Data System (ADS)

Ochoa, Edward M.; Nelson, Thomas R., Jr.; Blum-Spahn, Olga; Lott, James A.

2003-07-01

We report and use our micro-electro-mechanically tunable vertical cavity surface emitting laser (MEM-TVCSEL) computer-aided design methodology to investigate the resonant frequency design space for monolithic and hybrid MEM-TVCSELs. For various initial optical air gap thickness, we examine the sensitivity of monolithic or hybrid MEM-TVCSEL resonant frequency by simulating zero, two, and four percent variations in III-V material growth thickness. As expected, as initial optical airgap increases, tuning range decreases due to less coupling between the active region and the tuning mirror. However, each design has different resonant frequency sensitivity to variations in III-V growth parameters. In particular, since the monolithic design is comprised of III-V material, the shift in all growth thicknesses significantly shifts the resonant frequency response. However, for hybrid MEMTVCSELs, less shift results, since the lower reflector is an Au mirror with reflectivity independent of III-V growth variations. Finally, since the hybrid design is comprised of a MUMPS polysilicon mechanical actuator, pull-in voltage remains independent of the initial optical airgap between the tuning reflector and the III-V material. Conversely, as the initial airgap increases in the monolithic design, the pull-in voltage significantly increases.

ARSENIC REMOVAL

EPA Science Inventory

Presentation covered five topics; arsenic chemistry, best available technology (BAT), surface water technology, ground water technology and case studies of arsenic removal. The discussion on arsenic chemistry focused on the need and method of speciation for AsIII and AsV. BAT me...

Installation Restoration Program. Phase II--Confirmation/Quantification. Stage 1.

DTIC Science & Technology

1985-03-01

four phases. Phase I, Initial Assessment/ Records Search, is designed to identify possible hazardous waste contami- nated sites and potential...7 71 -. - - IL’ -, 1% 33 AihlIII Is 33 n~iL t iiC UII! ii CL C LU 1-3, Phase II, Confirmation and Quantification, is designed to confirm the...additional monitoring data upon which design of mitigative actions are based. In Phase III, Technology Base Development, appropriate technology is selected and

Industrial Arts Test Development, Book III. Resource Items for Graphics Technology, Power Technology, Production Technology.

ERIC Educational Resources Information Center

New York State Education Dept., Albany.

This booklet is designed to assist teachers in developing examinations for classroom use. It is a collection of 955 objective test questions, mostly multiple choice, for industrial arts students in the three areas of graphics technology, power technology, and production technology. Scoring keys are provided. There are no copyright restrictions,…

76 FR 539 - Alternative Personnel Management System (APMS) at the National Institute of Standards and Technology

Federal Register 2010, 2011, 2012, 2013, 2014

2011-01-05

... and Engineering (ZP) career path at the Pay Band III and above, for Nuclear Reactor Operator positions in the Scientific and Engineering Technician (ZT) career path at Pay Band III and above, and for all... FR 54604), OPM concurred that all occupations in the ZP career path at the band III and above...

77 FR 48128 - Alternative Personnel Management System (APMS) at the National Institute of Standards and Technology

Federal Register 2010, 2011, 2012, 2013, 2014

2012-08-13

... positions in NIST's Scientific and Engineering Technician (ZT) career path at the Pay Band III and above, and for all positions in NIST's Scientific and Engineering (ZP) career path at the Pay Band III and... Engineering (ZP) career path at the Pay Band III and above, for Nuclear Reactor Operator positions in the...

49 CFR 572.120 - Incorporation by reference.

Code of Federal Regulations, 2010 CFR

2010-10-01

... Child Test Dummy, Beta Version § 572.120 Incorporation by reference. (a) The following materials are... List and Drawings, Hybrid III Six-year-old Child Test Dummy (H-III6C, Beta Version) (June 2002... (vii) The Hybrid III Six-year-old Child Parts/Drawing List. (2) A procedures manual entitled...

49 CFR 572.161 - General description.

Code of Federal Regulations, 2010 CFR

2010-10-01

... Weighted Child Test Dummy § 572.161 General description. (a) The Hybrid III Six-Year-Old Weighted Child Test Dummy is defined by drawings and specifications containing the following materials: (1) “Parts List and Drawings, Part 572 Subpart S, Hybrid III Weighted Six-Year Old Child Test Dummy (H-III6CW...

Investigation of Low Cost Substrate Approaches for III-V Solar Cells

NASA Astrophysics Data System (ADS)

Lichty, Marlene Lydia

With the need for cleaner energy sources, which can displace fossil fuel, the solar cell industry is of particular interest due to the abundancy of the Sun. Silicon currently dominates terrestrial applications, but efficiency improvements have saturated. III-V based solar cells have reported the highest efficiencies, however, high costs due to substrates and fabrication processes have limited these devices to specialty applications, such as space. In order to reduce the cost associated with fabricating III-V semiconductor substrate material, two different approaches were taken in this work with a particular focus on making III-Vs more applicable outside of specialty applications, including InP, InAsnd Ge. Typical material characterization techniques were used to analyze the samples and processes studied in this thesis. The first process examined was the direct epitaxial growth of III-V materials by MOCVD on cheaper substrates. More specifically, the direct growth of InP and InAs on metal foils. A growth time study and surface coverage analysis was performed for the growth of InP. A characterization study was then conducted on the second process, the aluminum- induced crystallization of germanium to determine the effects this process had on the surface. Crystalline InP, InAs and Ge were successfully characterized in this work, and show promise for use in cheaper III-V alternatives to terrestrial energy solutions.

Toward a III-V Multijunction Space Cell Technology on Si

NASA Technical Reports Server (NTRS)

Ringel, S. A.; Lueck, M. R.; Andre, C. L.; Fitzgerald, E. A.; Wilt, D. M.; Scheiman, D.

2007-01-01

High efficiency compound semiconductor solar cells grown on Si substrates are of growing interest in the photovoltaics community for both terrestrial and space applications. As a potential substrate for III-V compound photovoltaics, Si has many advantages over traditional Ge and GaAs substrates that include higher thermal conductivity, lower weight, lower material costs, and the potential to leverage the extensive manufacturing base of the Si industry. Such a technology that would retain high solar conversion efficiency at reduced weight and cost would result in space solar cells that simultaneously possess high specific power (W/kg) and high power density (W/m2). For terrestrial solar cells this would result in high efficiency III-V concentrators with improved thermal conductivity, reduced cost, and via the use of SiGe graded interlayers as active component layers the possibility of integrating low bandgap sub-cells that could provide for extremely high conversion efficiency.1 In addition to photovoltaics, there has been an historical interest in III-V/Si integration to provide optical interconnects in Si electronics, which has become of even greater relevance recently due to impending bottlenecks in CMOS based circuitry. As a result, numerous strategies to integrate GaAs with Si have been explored with the primary issue being the approx.4% lattice mismatch between GaAs and Si. Among these efforts, relaxed, compositionally-graded SiGe buffer layers where the substrate lattice constant is effectively tuned from Si to that of Ge so that a close lattice match to subsequent GaAs overlayers have shown great promise. With this approach, threading dislocation densities (TDDs) of approx.1 x 10(exp 6)/sq cm have been uniformly achieved in relaxed Ge layers on Si,5 leading to GaAs on Si with minority carrier lifetimes greater than 10 ns,6 GaAs single junction solar cells on Si with efficiencies greater than 18%,7 InGaAs CW laser diodes on Si,8 and room temperature GaInP red laser diodes on Si.9 Here we report on the first high performance dual junction GaInP/GaAs solar cells grown on Si using this promising SiGe engineered substrate approach.

Atomic-scale investigations of current and future devices: from nitride-based transistors to quantum computing

NASA Astrophysics Data System (ADS)

Gordon, Luke

Our era is defined by its technology, and our future is dependent on its continued evolution. Over the past few decades, we have witnessed the expansion of advanced technology into all walks of life and all industries, driven by the exponential increase in the speed and power of semiconductor-based devices. However, as the length scale of devices reaches the atomic scale, a deep understanding of atomistic theory and its application is increasingly crucial. In order to illustrate the power of an atomistic approach to understanding devices, we will present results and conclusions from three interlinked projects: n-type doping of III-nitride semiconductors, defects for quantum computing, and macroscopic simulations of devices. First, we will study effective n-type doping of III-nitride semiconductors and their alloys, and analyze the barriers to effective n-type doping of III-nitrides and their alloys. In particular, we will study the formation of DX centers, and predict alloy composition onsets for various III-nitride alloys. In addition, we will perform a comprehensive study of alternative dopants, and provide potential alternative dopants to improve n-type conductivity in AlN and wide-band-gap nitride alloys. Next, we will discuss how atomic-scale defects can act as a curse for the development of quantum computers by contributing to decoherence at an atomic scale, specifically investigating the effect of two-level state defects (TLS) systems in alumina as a source of decoherence in superconducting qubits based on Josephson junctions; and also as a blessing, by allowing the identification of wholly new qubits in different materials, specifically showing calculations on defects in SiC for quantum computing applications. Finally, we will provide examples of recent calculations we have performed for devices using macrosopic device simulations, largely in conjunction with first-principles calculations. Specifically, we will discuss the power of using a multi-scale approach to accurately model oxide and nitride-based heterostructures, and thereby illustrate our ability to predict device performance on scales unreachable using a purely first-principles approach.

Preparation and certification of arsenate [As(V)] reference material, NMIJ CRM 7912-a.

PubMed

Narukawa, Tomohiro; Kuroiwa, Takayoshi; Narushima, Izumi; Jimbo, Yasujiro; Suzuki, Toshihiro; Chiba, Koichi

2010-05-01

Arsenate [As(V)] solution reference material, National Metrology Institute of Japan (NMIJ) certified reference material (CRM) 7912-a, for speciation of arsenic species was developed and certified by NMIJ, the National Institute of Advanced Industrial Science and Technology. High-purity As(2)O(3) reagent powder was dissolved in 0.8 M HNO(3) solution and As(III) was oxidized to As(V) with HNO(3) to prepare 100 mg kg(-1) of As(V) candidate CRM solution. The solution was bottled in 400 bottles (50 mL each). The concentration of As(V) was determined by four independent analytical techniques-inductively coupled plasma mass spectrometry, inductively coupled plasma optical emission spectrometry, graphite furnace atomic absorption spectrometry, and liquid chromatography inductively coupled plasma mass spectrometry-according to As(V) calibration solutions, which were prepared from the arsenic standard of the Japan Calibration Service system and whose species was guaranteed to be As(V) by NMIJ. The uncertainties of all the measurements and preparation procedures were evaluated. The certified value of As(V) in the CRM is (99.53 +/- 1.67) mg kg(-1) (k = 2).

Space manufacturing III; Proceedings of the Fourth Conference, Princeton University, Princeton, N.J., May 14-17, 1979

NASA Technical Reports Server (NTRS)

Grey, J. (Editor); Krop, C.

1979-01-01

Papers are presented on the various technological, political, economic, environmental and social aspects of large manufacturing facilities in space. Specific topics include the potential global market for satellite solar power stations in 2025, the electrostatic separation of lunar soil, methods for extraterrestrial materials processing, the socio-political status of efforts toward the development of space manufacturing facilities, the financing of space industrialization, the optimization of space manufacturing systems, the design and project status of Mass Driver Two, and the use of laser-boosted lighter-than-air-vehicles as heavy-lift launch vehicles. Attention is also given to systems integration in the development of controlled ecological life support systems, the design of a space manufacturing facility to use lunar materials, high performance solar sails, the environmental effects of the satellite power system reference design, the guidance, trajectory and capture of lunar materials ejected from the moon by mass driver, the relative design merits of zero-gravity and one-gravity space environments, consciousness alteration in space and the prospecting and retrieval of asteroids.

A History of the Chemical Innovations in Silver-Halide Materials for Color PhotographyIII. Dye Tranfer Process — Instant Color Photography

NASA Astrophysics Data System (ADS)

Oishi, Yasushi

A historical review of the technological developments of instant color photographic process, is presented with emphasis on the innovation processes at the following main turning points: 1) the creation of instant photography by E. H. Land in 1948 (one step processing by transfer of image-forming materials), 2) the advent of instant color photography based on dye developer, by Polaroid Corp., in 1963 (departing from dye-forming development, forming a direct positive preformed-dye image with a negative emulsion, but constraining the sensitive-material designs), 3) the introduction of a color instant product containing redox dye releaser with improved auto-positive emulsion, by Eastman Kodak Co., in 1976 (producing much improved color image quality, freed from the design constraints), and 4) the realization of absolute one-step photography by the integral film- unit system, by Polaroid in 1972. And the patent litigation (1976-86) raised by Polaroid against Kodak allegedly infringing on the integral film-unit patents caused the vast impacts on the industry.

Ti film deposition process of a plasma focus: Study by an experimental design

NASA Astrophysics Data System (ADS)

Inestrosa-Izurieta, M. J.; Moreno, J.; Davis, S.; Soto, L.

2017-10-01

The plasma generated by plasma focus (PF) devices have substantially different physical characteristics from another plasma, energetic ions and electrons, compared with conventional plasma devices used for plasma nanofabrication, offering new and unique opportunities in the processing and synthesis of Nanomaterials. This article presents the use of a plasma focus of tens of joules, PF-50J, for the deposition of materials sprayed from the anode by the plasma dynamics in the axial direction. This work focuses on the determination of the most significant effects of the technological parameters of the system on the obtained depositions through the use of a statistical experimental design. The results allow us to give a qualitative understanding of the Ti film deposition process in our PF device depending on four different events provoked by the plasma dynamics: i) an electric erosion of the outer material of the anode; ii) substrate ablation generating an interlayer; iii) electron beam deposition of material from the center of the anode; iv) heat load provoking clustering or even melting of the deposition surface.

Conformational space annealing scheme in the inverse design of functional materials

NASA Astrophysics Data System (ADS)

Kim, Sunghyun; Lee, In-Ho; Lee, Jooyoung; Oh, Young Jun; Chang, Kee Joo

2015-03-01

Recently, the so-called inverse method has drawn much attention, in which specific electronic properties are initially assigned and target materials are subsequently searched. In this work, we develop a new scheme for the inverse design of functional materials, in which the conformational space annealing (CSA) algorithm for global optimization is combined with first-principles density functional calculations. To implement the CSA, we need a series of ingredients, (i) an objective function to minimize, (ii) a 'distance' measure between two conformations, (iii) a local enthalpy minimizer of a given conformation, (iv) ways to combine two parent conformations to generate a daughter one, (v) a special conformation update scheme, and (vi) an annealing method in the 'distance' parameter axis. We show the results of applications for searching for Si crystals with direct band gaps and the lowest-enthalpy phase of boron at a finite pressure and discuss the efficiency of the present scheme. This work is supported by the National Research Foundation of Korea (NRF) under Grant No. NRF-2005-0093845 and by Samsung Science and Technology Foundation under Grant No. SSTFBA1401-08.

Emerging memories: resistive switching mechanisms and current status

NASA Astrophysics Data System (ADS)

Jeong, Doo Seok; Thomas, Reji; Katiyar, R. S.; Scott, J. F.; Kohlstedt, H.; Petraru, A.; Hwang, Cheol Seong

2012-07-01

The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied. Resistive switching phenomena have been observed in many oxides: (i) binary transition metal oxides (TMOs), e.g. TiO2, Cr2O3, FeOx and NiO; (ii) perovskite-type complex TMOs that are variously functional, paraelectric, ferroelectric, multiferroic and magnetic, e.g. (Ba,Sr)TiO3, Pb(Zrx Ti1-x)O3, BiFeO3 and PrxCa1-xMnO3 (iii) large band gap high-k dielectrics, e.g. Al2O3 and Gd2O3; (iv) graphene oxides. In the non-oxide category, higher chalcogenides are front runners, e.g. In2Se3 and In2Te3. Hence, the number of materials showing this technologically interesting behaviour for information storage is enormous. Resistive switching in these materials can form the basis for the next generation of NVM, i.e. RRAM, when current semiconductor memory technology reaches its limit in terms of density. RRAMs may be the high-density and low-cost NVMs of the future. A review on this topic is of importance to focus concentration on the most promising materials to accelerate application into the semiconductor industry. This review is a small effort to realize the ambitious goal of RRAMs. Its basic focus is on resistive switching in various materials with particular emphasis on binary TMOs. It also addresses the current understanding of resistive switching behaviour. Moreover, a brief comparison between RRAMs and memristors is included. The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.

7 CFR 2.24 - Assistant Secretary for Administration.

Code of Federal Regulations, 2011 CFR

2011-01-01

... continue, modify, or terminate an information technology program or project. (iii) Provide advice and other... exchange, scheduling, computer conferencing, televideo technologies, and other applications of office... Chief Information Officers and agency major information technology system project managers in accordance...

40 CFR 94.218 - Deterioration factor determination.

Code of Federal Regulations, 2011 CFR

2011-07-01

... family. (b) Calculation procedures—(1) For engines not utilizing aftertreatment technology (e.g... technology (e.g., catalyst). For each applicable emission constituent, a multiplicative deterioration factor.... (iii) Engineering analysis for established technologies. In the case where an engine family uses...

7 CFR 2.24 - Assistant Secretary for Administration.

Code of Federal Regulations, 2012 CFR

2012-01-01

... continue, modify, or terminate an information technology program or project. (iii) Provide advice and other... exchange, scheduling, computer conferencing, televideo technologies, and other applications of office... Chief Information Officers and agency major information technology system project managers in accordance...

[Does elitism of school influence the smoking-related health behaviour among grammar school students?].

PubMed

Józwicki, Wojciech; Gołda, Ryszard; Domaniewska, Jolanta; Skok, Zdzisław; Jarzemski, Piotr; Przybylski, Grzegorz; Domaniewski, Jan

2009-01-01

The aim of the study was connected with smoking health behaviour estimation among public (SZP) and nonpublic (SZN) grammar school students. The analysis of 156 anonymous questionnaires was made. Questionnaires contained questions of parents' education, material situation of family, physical education, social relations with family and peers and positive or negative perception of smoking. In total trial we observed a strong positive correlation between style of smoking or number of smoked cigarettes and positive perception of smoking (r = 0.62 or r = 0.36 respectively). The latter correlated significantly with family presence of smoking (r = 0.18). Percentages of smoking students of SZP and SZN differed and amounted 22% and 18% respectively. Within I/II SZP classes the smoking depended on material position of family (r = 0.28) and positive perception of smoking (r = 0.68). Among students of III SZP classes the dependence on material situation was stronger (r = 0.49), while students of III SZN classes became to perceive smoking more positive (r = 0.82). Social relations of students of I/II SZN classes were inversely proportional to prevalence of smoking in their families. Smoking students of III SZN classes worked out much more variously in comparison with pupils of SZP. The main motivation of smoking within school students was the positive perception of smoking. The differences of smoking prevalence within both types of school probably formed in the families and observed in I/II classes pupils, vanished during the time of III class of studying. Elitism of school do not protect the student from smoking: during the time of III SZN class the smoking receives clearly positive appearance and became established. Probably existing antinicotinic school programs should much more decidedly deliver the negative appearance of health effects of smoking.

Interactive Materials In The Teaching Of Astronomy

NASA Astrophysics Data System (ADS)

Macêdo, J. A.; Voelzke, M. R.

2014-10-01

This study presents results of a survey conducted at the Federal Institution of Education, Science and Technology in the North of Minas Gerais (IFNMG), and aimed to investigate the potentialities of the use of interactive materials in the teaching of astronomy. An advanced training course with involved learning activities about basic concepts of astronomy was offered to thirty-two Licenciate students in Physics, Mathematics and Biological Science. The following steps were to be taken: i) analysis of the pedagogical projects (PPC) of the licenciates at the IFNMG, research locus of its Campus Januária; ii) analysis of students' preconceptions about astronomy and digital technologies, identified by the application of an initial questionnaire; iii) preparation of the course taking into account the students' previous knowledge; iv) application of the education proposal developed under part-time presence modality, using various interactive tools; v) application and analysis of the final questionnaire. The test was conducted with the qualitative and quantitative methodology, combined with a content analysis. The results indicated that in the IFNMG only the licenciate-course in physics includes astronomy content diluted in various subjects of the curriculum; the rates of students prior knowledge in relation to astronomy was low; an evidence of meaningful learning of the concepts related to astronomy, and of viability of resource use involving digital technologies in the Teaching of astronomy, which may contribute to the broadening of methodological options of future teachers and meet their training needs.

Analytical model for the threshold voltage of III-V nanowire transistors including quantum effects

NASA Astrophysics Data System (ADS)

Marin, E. G.; Ruiz, F. G.; Tienda-Luna, I. M.; Godoy, A.; Gámiz, F.

2014-02-01

In this work we propose an analytical model for the threshold voltage (VT) of III-V cylindrical nanowires, that takes into consideration the two dimensional quantum confinement of the carriers, the Fermi-Dirac statistics, the wave-function penetration into the gate insulator and the non-parabolicity of the conduction band structure. A simple expression for VT is obtained assuming some suitable approximations. The model results are compared to those of a 2D self consistent Schrödinger-Poisson solver, demonstrating a good fit for different III-V materials, insulator thicknesses and nanowire sizes with diameter down to 5 nm. The VT dependence on the confinement effective mass is discussed. The different contributions to VT are analyzed showing significant variations among different III-V materials.

Growth and Defect Characterization of Quantum Dot-Embedded III-V Semiconductors for Advanced Space Photovoltaics

DTIC Science & Technology

2014-05-15

important performance degradation mechanism, and provides a target for future comparisons with MBE-grown QD/host systems . 15. SUBJECT TERMS solar ...challenge for every photovoltaics ( PV ) technology. For space solar cell technologies, the III-V multijunction (MJ) concept has been the leading approach to...gap composition, without the need for high Al concentrations, is nonetheless available in the GaAsP alloy system at GaAs0.52P0.48, which is

Computational modeling and simulation study of electronic and thermal properties in semiconductor nanostructures

NASA Astrophysics Data System (ADS)

Paul, Abhijeet

2011-07-01

The technological progress in dimensional scaling has not only kept Silicon CMOS industry on Moore's law for the past five decades but has also benefited many other areas such as thermoelectricity, photo-voltaics, and energy storage. Extending CMOS beyond Si (More Moore, MM) and adding functional diversity to CMOS (More Than Moore, MTM) requires a thorough understanding of the basic electron and heat flow in semiconductors. Along with experiments computer modeling and simulation are playing an increasingly vital role in exploring the numerous possibilities in materials, devices and systems. With these aspects in mind the present work applies computational physics modeling and simulations to explore the, (i) electronic, (ii) thermal, and (iii) thermoelectric properties in nano-scale semiconductors. The electronic structure of zinc-blende and lead-chalcogenide nano-materials is calculated using an atomistic Tight-Binding model. The phonon dispersion in zinc-blende materials is obtained using the Modified Valence Force Field model. Electronic and thermal transport at the nano-scale is explored using Green's function method and Landauer's method. Thermoelectric properties of semiconductor nanostructures are calculated using Landauer's method. Using computer modeling and simulations the variation of the three physical properties (i-iii) are explored with varying size, transport orientation, shape, porosity, strain and alloying of nanostructures. The key findings are, (a) III-Vs and Ge with optimized strain and orientation can improve transistors' and thermoelectric performance, (b) porous Si nanowires provide a lucrative idea for enhancing the thermoelectric efficiency at room temperature, and (c) Si/Ge superlattice nanowires can be used for nano-scale tuning of lattice thermal conductivity by period control. The present work led to the development of two new interface trap density extraction methods in ultra-scaled FinFETs and correlation of the phonon shifts in Si nanowires to their shape, size and orientation benchmarked against experimental Raman spectroscopy data, thereby enabling nano-scale metrology. Contribution of two research and six educational tools on nanoHUB.org forms an integral part of the work for global dissemination of semiconductor knowledge. Atomic level manipulation holds the key to engineer material properties at the nano-scale. The findings of this work will hopefully open and guide new ways of engineering the electronic and thermal properties for better performance.

Mocvd Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers

NASA Astrophysics Data System (ADS)

Al Balushi, Zakaria Y.

Group-III nitride semiconductors (AlN, GaN, InN and their alloys) are considered one of the most important class of materials for electronic and optoelectronic devices. This is not limited to the blue light-emitting diode (LED) used for efficient solid-state lighting, but other applications as well, such as solar cells, radar and a variety of high frequency power electronics, which are all prime examples of the technological importance of nitride based wide bandgap semiconductors in our daily lives. The goal of this dissertation work was to explore and establish new growth schemes to improve the structural and optical properties of thick to atomically thin films of group-III nitrides grown by metalorganic chemical vapor deposition (MOCVD) on SiC substrates for future novel devices. The first research focus of this dissertation was on the growth of indium gallium nitride (InGaN). This wide bandgap semiconductor has attracted much research attention as an active layer in LEDs and recently as an absorber material for solar cells. InGaN has superior material properties for solar cells due to its wavelength absorption tunability that nearly covers the entire solar spectrum. This can be achieved by controlling the indium content in thick grown material. Thick InGaN films are also of interest as strain reducing based layers for deep-green and red light emitters. The growth of thick films of InGaN is, however, hindered by several combined problems. This includes poor incorporation of indium in alloys, high density of structural and morphological defects, as well as challenges associated with the segregation of indium in thick films. Overcoming some of these material challenges is essential in order integrate thick InGaN films into future optoelectronics. Therefore, this dissertation research investigated the growth mechanism of InGaN layers grown in the N-polar direction by MOCVD as a route to improve the structural and optical properties of thick InGaN films. The growth of N-polar InGaN by MOCVD is challenging. These challenges arise from the lack of available native substrates suitable for N-polar film growth. As a result, InGaN layers are conventionally grown in the III-polar direction (i.e. III-polar InGaN) and typically grow under considerable amounts of stress on III-polar GaN base layers. While the structure-property relations of thin III-polar InGaN layers have been widely studied in quantum well structures, insight into the growth of thick films and N-polar InGaN layers have been limited. Therefore, this dissertation research compared the growth of both thick III-polar and N-polar InGaN films grown on optimized GaN base layers. III-polar InGaN films were rough and exhibited a high density of V-pits, while the growth of thick N-polar InGaN films showed improved structural quality and low surface roughness. The results of this dissertation work thereby provide an alternative route to the fabrication of thick InGaN films for potential use in solar cells as well as strain reducing schemes for deep-green and red light emitters. Moreover, this dissertation investigated stress relaxation in thick N-polar films using in situ reflectivity and curvature measurements. The results showed that stress relaxation in N-polar InGaN significantly differed from III-polar InGaN due to the absence of V-pits and it was hypothesized that plastic relaxation in N-polar InGaN could occur by dislocation glide, which typically is kinetically limited at such low growth temperatures required for InGaN. The second part of this dissertation research work focused on buffer free growth of GaN directly on SiC and on epitaxial graphene produced on SiC for potential vertical devices. The studies presented in this dissertation work on the growth of GaN directly on SiC compared the stress evolution of GaN films grown with and without an AlN buffer layer. Films grown directly on SiC showed reduced threading dislocation densities and improved surface roughness when compared to the growth of GaN on an AlN buffer layer. The dislocations in the GaN films grown di

7 CFR 2.24 - Assistant Secretary for Administration.

Code of Federal Regulations, 2013 CFR

2013-01-01

... determining whether to continue, modify, or terminate an information technology program or project. (iii... technology to improve productivity in the Department. (P) Plan, develop, install, and operate computer-based systems for message exchange, scheduling, computer conferencing, televideo technologies, and other...

Three-Dimensional Modeling of Fracture Clusters in Geothermal Reservoirs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghassemi, Ahmad

The objective of this is to develop a 3-D numerical model for simulating mode I, II, and III (tensile, shear, and out-of-plane) propagation of multiple fractures and fracture clusters to accurately predict geothermal reservoir stimulation using the virtual multi-dimensional internal bond (VMIB). Effective development of enhanced geothermal systems can significantly benefit from improved modeling of hydraulic fracturing. In geothermal reservoirs, where the temperature can reach or exceed 350oC, thermal and poro-mechanical processes play an important role in fracture initiation and propagation. In this project hydraulic fracturing of hot subsurface rock mass will be numerically modeled by extending the virtual multiplemore » internal bond theory and implementing it in a finite element code, WARP3D, a three-dimensional finite element code for solid mechanics. The new constitutive model along with the poro-thermoelastic computational algorithms will allow modeling the initiation and propagation of clusters of fractures, and extension of pre-existing fractures. The work will enable the industry to realistically model stimulation of geothermal reservoirs. The project addresses the Geothermal Technologies Office objective of accurately predicting geothermal reservoir stimulation (GTO technology priority item). The project goal will be attained by: (i) development of the VMIB method for application to 3D analysis of fracture clusters; (ii) development of poro- and thermoelastic material sub-routines for use in 3D finite element code WARP3D; (iii) implementation of VMIB and the new material routines in WARP3D to enable simulation of clusters of fractures while accounting for the effects of the pore pressure, thermal stress and inelastic deformation; (iv) simulation of 3D fracture propagation and coalescence and formation of clusters, and comparison with laboratory compression tests; and (v) application of the model to interpretation of injection experiments (planned by our industrial partner) with reference to the impact of the variations in injection rate and temperature, rock properties, and in-situ stress.« less

Ultra High p-doping Material Research for GaN Based Light Emitters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vladimir Dmitriev

2007-06-30

The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading inmore » light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.« less

John F. Kennedy Space Center's Technology Development and Application 2006-2007 Report

NASA Technical Reports Server (NTRS)

2008-01-01

Topics covered include: Reversible Chemochromic Hydrogen Detectors; Determining Trajectory of Triboelectrically Charged Particles, Using Discrete Element Modeling; Using Indium Tin Oxide To Mitigate Dust on Viewing Ports; High-Performance Polyimide Powder Coatings; Controlled-Release Microcapsules for Smart Coatings for Corrosion Applications; Aerocoat 7 Replacement Coatings; Photocatalytic Coatings for Exploration and Spaceport Design; New Materials for the Repair of Polyimide Electrical Wire Insulation; Commodity-Free Calibration; Novel Ice Mitigation Methods; Crack Offset Measurement With the Projected Laser Target Device; New Materials for Structural Composites and Protective Coatings; Fire Chemistry Testing of Spray-On Foam Insulation (SOFI); Using Aerogel-Based Insulation Material To Prevent Foam Loss on the Liquid-Hydrogen Intertank; Particle Ejection and Levitation Technology (PELT); Electrostatic Characterization of Lunar Dust; Numerical Analysis of Rocket Exhaust Cratering; RESOLVE Projects: Lunar Water Resource Demonstration and Regolith Volatile Characterization; Tribocharging Lunar Soil for Electrostatic Beneficiation; Numerically Modeling the Erosion of Lunar Soil by Rocket Exhaust Plumes; Trajectory Model of Lunar Dust Particles; Using Lunar Module Shadows To Scale the Effects of Rocket Exhaust Plumes; Predicting the Acoustic Environment Induced by the Launch of the Ares I Vehicle; Measuring Ultrasonic Acoustic Velocity in a Thin Sheet of Graphite Epoxy Composite; Hail Size Distribution Mapping; Launch Pad 39 Hail Monitor Array System; Autonomous Flight Safety System - Phase III; The Photogrammetry Cube; Bird Vision System; Automating Range Surveillance Through Radio Interferometry and Field Strength Mapping Techniques; Next-Generation Telemetry Workstation; GPS Metric Tracking Unit; and Space-Based Range.

Non-Intrusive, Distributed Gas Sensing Technology for Advanced Spacesuits

NASA Technical Reports Server (NTRS)

Delgado, Jesus; Phillips, Straun; Rubtsov, Vladimir; Chullen, Cinda

2015-01-01

Chemical sensors for monitoring gas composition, including oxygen, humidity, carbon dioxide, and trace contaminants are needed to characterize and validate spacesuit design and operating parameters. This paper reports on the first prototypes of a non-intrusive gas sensing technology based on flexible sensitive patches positioned inside spacesuit prototypes and interrogated by optical fibers routed outside the suit, taking advantage of the transparent materials of the suit prototypes. The sensitive patches are based on luminescent materials whose emission parameters vary with the partial pressure of a specific gas. Patches sensitive to carbon dioxide, humidity, oxygen, and ammonia have been developed, and their preliminary characterization in the laboratory using Mark III-like helmet parts is described. The first prototype system consists of a four-channel fiber optic luminescent detector that can be used to monitor any of the selected target gases at four locations. To switch from one gas to another we replace the (disposable) sensor patches and adjust the system settings. Repeatability among sensitive patches and of sensor performance from location to location has been confirmed, assuring that suit engineers will have flexibility in selecting multiple sensing points, fitting the sensor elements into the spacesuit, and easily repositioning the sensor elements as desired. The evaluation of the first prototype for monitoring carbon dioxide during washout studies in a space suit prototype is presented.

Non-Intrusive, Distributed Gas Sensing Technology for Advanced Spacesuits

NASA Technical Reports Server (NTRS)

Delgado, Jesus; Phillips, Straun; Rubtsov, Vladimir; Chullen, Cinda

2015-01-01

Chemical sensors for monitoring gas composition, including oxygen, humidity, carbon dioxide, and trace contaminants, are needed to characterize and validate spacesuit design and operating parameters. This paper reports on the first prototypes of a non-intrusive gas sensing technology based on flexible sensitive patches positioned inside spacesuit prototypes and interrogated via optical fibers routed outside the suit, taking advantage of the transparent materials of the suit prototypes. The sensitive patches are based on luminescent materials whose emission parameters vary with the partial pressure of a specific gas. Patches sensitive to carbon dioxide, humidity, and temperature have been developed, and their preliminary laboratory characterization in Mark III-like helmet parts is described. The first prototype system consists of a four-channel fiber optic luminescent detector that can be used to monitor any of the selected target gases at four locations. To switch from one gas to another we replace the (disposable) sensor patches and adjust the system settings. Repeatability among sensitive patches and of sensor performance from location to location has been confirmed, assuring that suit engineers will have flexibility in selecting multiple sensing points, fitting the sensor elements into the spacesuit, and easily repositioning the sensor elements as desired. The evaluation of the first prototype for monitoring carbon dioxide during washout studies in a spacesuit prototype is presented.

III-V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration

NASA Astrophysics Data System (ADS)

Cariou, Romain; Benick, Jan; Feldmann, Frank; Höhn, Oliver; Hauser, Hubert; Beutel, Paul; Razek, Nasser; Wimplinger, Markus; Bläsi, Benedikt; Lackner, David; Hermle, Martin; Siefer, Gerald; Glunz, Stefan W.; Bett, Andreas W.; Dimroth, Frank

2018-04-01

Silicon dominates the photovoltaic industry but the conversion efficiency of silicon single-junction solar cells is intrinsically constrained to 29.4%, and practically limited to around 27%. It is possible to overcome this limit by combining silicon with high-bandgap materials, such as III-V semiconductors, in a multi-junction device. Significant challenges associated with this material combination have hindered the development of highly efficient III-V/Si solar cells. Here, we demonstrate a III-V/Si cell reaching similar performances to standard III-V/Ge triple-junction solar cells. This device is fabricated using wafer bonding to permanently join a GaInP/GaAs top cell with a silicon bottom cell. The key issues of III-V/Si interface recombination and silicon's weak absorption are addressed using poly-silicon/SiOx passivating contacts and a novel rear-side diffraction grating for the silicon bottom cell. With these combined features, we demonstrate a two-terminal GaInP/GaAs//Si solar cell reaching a 1-sun AM1.5G conversion efficiency of 33.3%.

76 FR 19993 - Granting of Request for Early Termination of the Waiting Period Under the Premerger Notification...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-04-11

... 03/23/2011 20110137 G Amazon.com , Inc.; Quidsi, Inc.; Amazon.com , Inc. 20110603 G Ares Corporate Opportunities Fund III, L.P.; Global Defense Technology & Systems, Inc.; Ares Corporate Opportunities Fund III...

49 CFR 173.154 - Exceptions for Class 8 (corrosive materials).

Code of Federal Regulations, 2010 CFR

2010-10-01

... material meets the definition of a hazardous substance, hazardous waste, marine pollutant, or are offered... waste, or a marine pollutant, a material classed as a Class 8, Packing Group III, material solely...

QWIP Status at THALES

NASA Astrophysics Data System (ADS)

Costard, E.; Nedelcu, A.; Truffer, J. P.; Huet, O.; Dua, L.; Robo, J. A.; Marcadet, X.; Brière de l'Isle, N.; Facoetti, H.; Bois, P.

2009-11-01

Since 2002, the THALES Group has been manufacturing sensitive arrays using QWIP technology based on GaAs and related III-V compounds, at the Alcatel-Thales-III-V Lab (formerly part of THALES Research and Technology Laboratory). In the past researchers claimed many advantages of QWIPs. Uniformity was one of these and has been the key parameter for the production to start. Another widely claimed advantage for QWIPs was the so-called band-gap engineering and versatility of the III-V processing allowing the custom design of quantum structures to fulfil the requirements of specific applications such as very long wavelength (VLWIR) or multi-spectral detection. In this presentation, we give the status of our LWIR QWIP production line, and also the current status of QWIPs for MWIR (<5 μm) and VLWIR (>15 μm) arrays. As the QWIP technology cannot cover the full electromagnetic spectrum, we develop other semiconductor compounds for SWIR and UV applications. We present here the status of our 320 × 256 SWIR module with InGaAs photodiodes.

The observation of two compensation temperatures in a cobalt-manganese hexacyanochromate

NASA Astrophysics Data System (ADS)

Ohkoshi, Shin-ichi; Hozumi, Toshiya; Utsunomiya, Masayoshi; Abe, Masahiko; Hashimoto, Kazuhito

2003-05-01

We have prepared a new series of ternary metal Prussian blue analogs, K Ia(Co IIxMn II1- x) 1.5-0.5 a[Cr III(CN) 6]· zH 2O, incorporating ferromagnetic interaction between Co II and Cr III ions and antiferromagnetic interaction between Mn II and Cr III ions. The material for the composition of ( a, x)=(0.18,0.39) exhibited two compensation temperatures of 34 and 14 K, i.e., the spontaneous magnetization changed its sign twice with changing temperature. This material is the second example of the bulk magnet exhibiting two compensation temperatures.

Mine Waste Technology Program Electrochemical Tailings Cover

EPA Science Inventory

This report summarizes the results of Mine Waste Technology Program (MWTP) Activity III, Project 40, Electrochemical Tailings Cover, funded by the U.S. Environmental Protection Agency (EPA) and jointly administered by EPA and the U.S. Department of Energy (DOE). MSE Technology A...

Energy use in the marine transportation industry. Task III. Efficiency improvements. Draft report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1977-06-02

Research and development areas that hold promise for maritime energy conservation are identified and evaluated. The methodology used is discussed in Chapter II. The technology base of the commercial marine transportation industry relating to energy usage is made up of: main propulsion plants, propulsors, hydrodynamics, vessel operations, and fuels. Fifteen specific program areas in the first four generic technologies are identified and are evaluated. An economic and energy impact analysis and technological risk assessment was performed on the specific program areas and the results are summarized in Chapter III. The first five appendices address the generic technologies. The sixth appendixmore » contains the baseline operating and cost parameters against which the 15 program areas were evaluated, and the last appendix contains sample printouts of the MTEM model used to evaluate the energy consumption and economic impacts associated with the candidate technology areas. (MCW)« less

A Model System for the Design and Maintenance of Related Instruction Curriculum for Approved U.S. Department of Labor Apprenticeship Programs; Phase III. Final Report and Final Evaluation Report.

ERIC Educational Resources Information Center

Lane Community Coll., Eugene, OR.

A final report and final evaluation report of Phase III are provided for a project to establish a national clearinghouse for apprenticeship-related instructional materials. The final report provides a summary and a narrative account of these project activities: identification of materials; identification of apprenticeship curriculum needs;…

Doping-Driven Wettability of Two-Dimensional Materials: A Multiscale Theory.

PubMed

Tian, Tian; Lin, Shangchao; Li, Siyu; Zhao, Lingling; Santos, Elton J G; Shih, Chih-Jen

2017-11-07

Engineering molecular interactions at two-dimensional (2D) materials interfaces enables new technological opportunities in functional surfaces and molecular epitaxy. Understanding the wettability of 2D materials represents the crucial first step toward quantifying the interplay between the interfacial forces and electric potential of 2D materials interfaces. Here we develop the first theoretical framework to model the wettability of the doped 2D materials by properly bridging the multiscale physical phenomena at the 2D interfaces, including (i) the change of 2D materials surface energy (atomistic scale, several angstroms), (ii) the molecular reorientation of liquid molecules adjacent to the interface (molecular scale, 10 0 -10 1 nm), and (iii) the electrical double layer (EDL) formed in the liquid phase (mesoscopic scales, 10 0 -10 4 nm). The latter two effects are found to be the major mechanisms responsible for the contact angle change upon doping, while the surface energy change of a pure 2D material has no net effect on the wetting property. When the doping level is electrostatically tuned, we demonstrate that 2D materials with high quantum capacitances (e.g., transition metal dichalcogenides, TMDCs) possess a wider range of tunability in the interfacial tension, under the same applied gate voltage. Furthermore, practical considerations such as defects and airborne contamination are also quantitatively discussed. Our analysis implies that the doping level can be another variable to modulate the wettability at 2D materials interfaces, as well as the molecular packing behavior on a 2D material-coated surface, essentially facilitating the interfacial engineering of 2D materials.

Optical characteristics of sol-gel derived M3SiO5:Eu3+ (M = Sr, Ca and Mg) nanophosphors for display device technology

NASA Astrophysics Data System (ADS)

Singh, Devender; Sheoran, Suman; Bhagwan, Shri; Kadyan, Sonika

2016-12-01

A series of trivalent europium-doped M3SiO5 (M = Sr, Ca and Mg) phosphors were synthesized using sol-gel process at 950°C. Samples were further reheated at high temperature to study the effect of reheating on crystal structure and optical characteristics. X-ray diffraction measurement of these materials was carried out to know the crystal structure. Diffraction pattern showed monoclinic structure having space group Cm for Ca3SiO5 materials. However, tetragonal phase with space group P4/ncc was observed for Sr3SiO5 materials. Mg3SiO5 material show mixed diffraction peaks at 950 and 1,150°C. Transmission electron microscopic analysis was used to estimate the particle size of silicates. Photoluminescence emission spectra were recorded to check the luminescence properties of prepared materials. These phosphors exhibited a strong orange-red light under excitation at 395 nm. The prepared phosphors exhibited most intense peak in 610-620 nm region due to the 5D0→7F2 transition of europium (III) ion available in lattice. To overcome the deficiency of red silicates, M3SiO5 materials were explored and they might be integrated with ultraviolet LEDs to generate light which may be suitable for display applications.

National Responses to Technological Innovations in Weapon Systems, 1815 to the Present

DTIC Science & Technology

1986-01-07

CONTENTS Pane Preface Introduction 1 I. Technology of the Industrial Revolution 4 II. Innovative Technologies of the Early Twentieth Century 18 III...focuses on the period from 1815 to the present, from the beginning of the Industrial Revolution to the latest developments in military technology...TECHNOLOGY OF THE INDUSTRIAL REVOLUTION Technological innovation has influenced warfare since antiquity. But the development of new- technology and

2002 NASA Seal/Secondary Air System Workshop. Volume 1

NASA Technical Reports Server (NTRS)

Steinetz, Bruce M. (Editor); Hendricks, Robert C. (Editor)

2003-01-01

The 2002 NASA Seal/Secondary Air System Workshop covered the following topics: (i) Overview of NASA s perspective of aeronautics and space technology for the 21st century; (ii) Overview of the NASA-sponsored Ultra-Efficient Engine Technology (UEET), Turbine-Based Combined-Cycle (TBCC), and Revolutionary Turbine Accelator (RTA) programs; (iii) Overview of NASA Glenn's seal program aimed at developing advanced seals for NASA's turbomachinery, space propulsion, and reentry vehicle needs; (iv) Reviews of sealing concepts, test results, experimental facilities, and numerical predictions; and (v) Reviews of material development programs relevant to advanced seals development. The NASA UEET and TBCC/RTA program overviews illustrated for the reader the importance of advanced technologies, including seals, in meeting future turbine engine system efficiency and emission goals. For example, the NASA UEET program goals include an 8- to 15-percent reduction in fuel burn, a 15-percent reduction in CO2, a 70-percent reduction in NOx, CO, and unburned hydrocarbons, and a 30-dB noise reduction relative to program baselines. The workshop also covered several programs NASA is funding to investigate advanced reusable space vehicle technologies (X-38) and advanced space ram/scramjet propulsion systems. Seal challenges posed by these advanced systems include high-temperature operation, resiliency at the operating temperature to accommodate sidewall flexing, and durability to last many missions.

Shoe-Insole Technology for Injury Prevention in Walking

PubMed Central

Nagano, Hanatsu

2018-01-01

Impaired walking increases injury risk during locomotion, including falls-related acute injuries and overuse damage to lower limb joints. Gait impairments seriously restrict voluntary, habitual engagement in injury prevention activities, such as recreational walking and exercise. There is, therefore, an urgent need for technology-based interventions for gait disorders that are cost effective, willingly taken-up, and provide immediate positive effects on walking. Gait control using shoe-insoles has potential as an effective population-based intervention, and new sensor technologies will enhance the effectiveness of these devices. Shoe-insole modifications include: (i) ankle joint support for falls prevention; (ii) shock absorption by utilising lower-resilience materials at the heel; (iii) improving reaction speed by stimulating cutaneous receptors; and (iv) preserving dynamic balance via foot centre of pressure control. Using sensor technology, such as in-shoe pressure measurement and motion capture systems, gait can be precisely monitored, allowing us to visualise how shoe-insoles change walking patterns. In addition, in-shoe systems, such as pressure monitoring and inertial sensors, can be incorporated into the insole to monitor gait in real-time. Inertial sensors coupled with in-shoe foot pressure sensors and global positioning systems (GPS) could be used to monitor spatiotemporal parameters in real-time. Real-time, online data management will enable ‘big-data’ applications to everyday gait control characteristics. PMID:29738486

Study of uranium oxidation states in geological material.

PubMed

Pidchenko, I; Salminen-Paatero, S; Rothe, J; Suksi, J

2013-10-01

A wet chemical method to determine uranium (U) oxidation states in geological material has been developed and tested. The problem faced in oxidation state determinations with wet chemical methods is that U redox state may change when extracted from the sample material, thereby leading to erroneous results. In order to quantify and monitor U redox behavior during the acidic extraction in the procedure, an analysis of added isotopic redox tracers, (236)U(VI) and (232)U(IV), and of variations in natural uranium isotope ratio ((234)U/(238)U) of indigenous U(IV) and U(VI) fractions was performed. Two sample materials with varying redox activity, U bearing rock and U-rich clayey lignite sediment, were used for the tests. The Fe(II)/Fe(III) redox-pair of the mineral phases was postulated as a potentially disturbing redox agent. The impact of Fe(III) on U was studied by reducing Fe(III) with ascorbic acid, which was added to the extraction solution. We observed that ascorbic acid protected most of the U from oxidation. The measured (234)U/(238)U ratio in U(IV) and U(VI) fractions in the sediment samples provided a unique tool to quantify U oxidation caused by Fe(III). Annealing (sample heating) to temperatures above 500 °C was supposed to heal ionizing radiation induced defects in the material that can disturb U redox state during extraction. Good agreement between two independent methods was obtained for DL-1a material: an average 38% of U(IV) determined by redox tracer corrected wet chemistry and 45% for XANES. Copyright © 2013 Elsevier Ltd. All rights reserved.

What does "Diversity" Mean for Public Engagement in Science? A New Metric for Innovation Ecosystem Diversity.

PubMed

Özdemir, Vural; Springer, Simon

2018-03-01

Diversity is increasingly at stake in early 21st century. Diversity is often conceptualized across ethnicity, gender, socioeconomic status, sexual preference, and professional credentials, among other categories of difference. These are important and relevant considerations and yet, they are incomplete. Diversity also rests in the way we frame questions long before answers are sought. Such diversity in the framing (epistemology) of scientific and societal questions is important for they influence the types of data, results, and impacts produced by research. Errors in the framing of a research question, whether in technical science or social science, are known as type III errors, as opposed to the better known type I (false positives) and type II errors (false negatives). Kimball defined "error of the third kind" as giving the right answer to the wrong problem. Raiffa described the type III error as correctly solving the wrong problem. Type III errors are upstream or design flaws, often driven by unchecked human values and power, and can adversely impact an entire innovation ecosystem, waste money, time, careers, and precious resources by focusing on the wrong or incorrectly framed question and hypothesis. Decades may pass while technology experts, scientists, social scientists, funding agencies and management consultants continue to tackle questions that suffer from type III errors. We propose a new diversity metric, the Frame Diversity Index (FDI), based on the hitherto neglected diversities in knowledge framing. The FDI would be positively correlated with epistemological diversity and technological democracy, and inversely correlated with prevalence of type III errors in innovation ecosystems, consortia, and knowledge networks. We suggest that the FDI can usefully measure (and prevent) type III error risks in innovation ecosystems, and help broaden the concepts and practices of diversity and inclusion in science, technology, innovation and society.

III-V/Active-Silicon Integration for Low-Cost High-Performance Concentrator Photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ringel, Steven

This FPACE project was motivated by the need to establish the foundational pathway to achieve concentrator solar cell efficiencies greater than 50%. At such an efficiency, DOE modeling projected that a III-V CPV module cost of $0.50/W or better could be achieved. Therefore, the goal of this project was to investigate, develop and advance a III-V/Si mulitjunction (MJ) CPV technology that can simultaneously address the primary cost barrier for III-V MJ solar cells while enabling nearly ideal MJ bandgap profiles that can yield efficiencies in excess of 50% under concentrated sunlight. The proposed methodology was based on use of ourmore » recently developed GaAsP metamorphic graded buffer as a pathway to integrate unique GaAsP and Ga-rich GaInP middle and top junctions having bandgaps that are adjustable between 1.45 – 1.65 eV and 1.9 – 2.1 eV, respectively, with an underlying, 1.1 eV active Si subcell/substrate. With this design, the Si can be an active component sub-cell due to the semi-transparent nature of the GaAsP buffer with respect to Si as well as a low-cost alternative substrate that is amenable to scaling with existing Si foundry infrastructure, providing a reduction in materials cost and a low cost path to manufacturing at scale. By backside bonding of a SiGe, a path to exceed 50% efficiency is possible. Throughout the course of this effort, an expansive range of new understanding was achieved that has stimulated worldwide efforts in III-V/Si PV R&D that spanned materials development, metamorphic device optimization, and complete III-V/Si monolithic integration. Highlights include the demonstration of the first ideal GaP/Si interfaces grown by industry-standard MOCVD processes, the first high performance metamorphic tunnel junctions designed for III-V/Si integration, record performance of specific metamorphic sub-cell designs, the first fully integrated GaInP/GaAsP/Si double (1.7 eV/1.1 eV) and triple (1.95 eV/1.5 eV/1.1 eV) junction solar cells, the first high performance GaAsP/Si double junction cell, the demonstration of a new method that allow for rapid, quantitative and non-destructive characterization of dislocations (ECCI-electron channeling contrast imaging), the first observation, explanation and solution of the now commonly reported lifetime degradation and recovery phenomena in III-V/Si MOCVD growth, the first demonstration of a high performance SiGe cell with a bandgap of 0.9 eV, amongst other highlights. The impact of the program on the international community has been significant. At the start of our FPACE1 project and for the immediate prior years, 1-2 conference papers/annually were presented at IEEE PVSC. Once FPACE1 commenced in 2011, related efforts sprouted across the US, Europe and Asia and by 2015 there were 26 papers presented on III-V/Si multijunctions in the 2015 PVSC, demonstrating the excitement that was stimulated by the results of this FPACE1 effort.« less

Method for Improving Mg Doping During Group-III Nitride MOCVD

DOEpatents

Creighton, J. Randall; Wang, George T.

2008-11-11

A method for improving Mg doping of Group III-N materials grown by MOCVD preventing condensation in the gas phase or on reactor surfaces of adducts of magnesocene and ammonia by suitably heating reactor surfaces between the location of mixing of the magnesocene and ammonia reactants and the Group III-nitride surface whereon growth is to occur.

40 CFR Appendix III to Part 310 - Form: Application for Reimbursement to Local Governments for Emergency Response to Hazardous...

Code of Federal Regulations, 2011 CFR

2011-07-01

... RESPONSE TO HAZARDOUS SUBSTANCE RELEASES Pt. 310, App. III Appendix III to Part 310—Form: Application for... tools and supplies and similar materials purchased specifically for, and expended during, the response May include such items as chemical foam to suppress a fire; food purchased specifically for an...

47 CFR 90.548 - Interoperability Technical Standards.

Code of Federal Regulations, 2014 CFR

2014-10-01

... Specification—New Technology Standards Project—Digital Radio Technical Standards, approved March 2005. (v) ANSI/TIA-102.BAEE-B-2010, Project 25 Radio Management Protocols—New Technology Standards Project—Digital... 2003. (iii) ANSI/TIA-102.BAEA-B-2012, Project 25 Data Overview—New Technology Standards Project—Digital...

Mine Waste Technology Program. Passive Treatment for Reducing Metal Loading

EPA Science Inventory

This report summarizes the results of Mine Waste Technology Program (MWTP) Activity III, Project 48, Passive Treatment Technology Evaluation for Reducing Metal Loading, funded by the U.S. Environmental Protection Agency (EPA) and jointly administered by EPA and the U.S. Departmen...

14 CFR 1260.12 - Choice of award instrument.

Code of Federal Regulations, 2013 CFR

2013-01-01

... improving student performance in science, mathematics, technology, or related fields; (ii) Enhancing the skill, knowledge, or ability of teachers or faculty members in science, mathematics, or technology; (iii... participation and/or to enhance performance in science, mathematics, or technology education at all levels; and...

14 CFR 1260.12 - Choice of award instrument.

Code of Federal Regulations, 2011 CFR

2011-01-01

... improving student performance in science, mathematics, technology, or related fields; (ii) Enhancing the skill, knowledge, or ability of teachers or faculty members in science, mathematics, or technology; (iii... participation and/or to enhance performance in science, mathematics, or technology education at all levels; and...

14 CFR 1260.12 - Choice of award instrument.

Code of Federal Regulations, 2010 CFR

2010-01-01

... improving student performance in science, mathematics, technology, or related fields; (ii) Enhancing the skill, knowledge, or ability of teachers or faculty members in science, mathematics, or technology; (iii... participation and/or to enhance performance in science, mathematics, or technology education at all levels; and...

Versatile buffer layer architectures based on Ge1-xSnx alloys

NASA Astrophysics Data System (ADS)

Roucka, R.; Tolle, J.; Cook, C.; Chizmeshya, A. V. G.; Kouvetakis, J.; D'Costa, V.; Menendez, J.; Chen, Zhihao D.; Zollner, S.

2005-05-01

We describe methodologies for integration of compound semiconductors with Si via buffer layers and templates based on the GeSn system. These layers exhibit atomically flat surface morphologies, low defect densities, tunable thermal expansion coefficients, and unique ductile properties, which enable them to readily absorb differential stresses produced by mismatched overlayers. They also provide a continuous selection of lattice parameters higher than that of Ge, which allows lattice matching with technologically useful III-V compounds. Using this approach we have demonstrated growth of GaAs, GeSiSn, and pure Ge layers at low temperatures on Si(100). These materials display extremely high-quality structural, morphological, and optical properties opening the possibility of versatile integration schemes directly on silicon.

Investigating the trade-offs of microwave susceptors in energetic composites: Microwave heating versus combustion performance

NASA Astrophysics Data System (ADS)

Crane, C. A.; Pantoya, M. L.; Weeks, B. L.

2014-03-01

Recently, microwave technology has been used to ignite energetic materials when studies showed that metal powders readily absorb microwave energy. This study investigates adding a graphite susceptor to an energetic composite consisting of aluminum (Al) and iron (III) oxide (Fe2O3) and examines microwave coupling to the sample. In a companion study, the combustion of this thermite as a function of susceptor concentration was also studied to evaluate the trade-off between enhancing microwave coupling and flame propagation speed. Results show that graphite enhances microwave coupling up to 10% by mass concentration but reduces heating at higher percentages that exceed a percolation threshold. As susceptor concentrations increased greater than one mass percent, the flame propagation speed correspondingly decreased.

76 FR 13984 - Cloud Computing Forum & Workshop III

Federal Register 2010, 2011, 2012, 2013, 2014

2011-03-15

... DEPARTMENT OF COMMERCE National Institute of Standards and Technology Cloud Computing Forum... public workshop. SUMMARY: NIST announces the Cloud Computing Forum & Workshop III to be held on April 7... provide information on the NIST strategic and tactical Cloud Computing program, including progress on the...

Towards a comprehensive and realistic risk evaluation of engineered nanomaterials in the urban water system

NASA Astrophysics Data System (ADS)

Duester, Lars; Burkhardt, Michael; Gutleb, Arno; Kaegi, Ralf; Macken, Ailbhe; Meermann, Björn; von der Kammer, Frank

2014-06-01

The European COoperation in Science and Technology (COST) Action ES1205 on the transfer of Engineered Nano materials from wastewater Treatment and stormwatEr to Rivers (ENTER) aims to create and to maintain a trans European network among scientists. This perspective article delivers a brief overview on the status quo at the beginning of the project by addressing the following aspects on engineered nano materials (ENMs) in the urban systems: i) ENMs that need to be considered on a European level; ii) uncertainties on production-volume estimations; iii) fate of selected ENMs during waste water transport and treatment; iv) analytical strategies for ENM analysis; v) ecotoxicity of ENMs, and vi) future needs. These six step stones deliver the derivation of the position of the ES1205 network at the beginning of the projects runtime, by defining six fundamental aspects that should be considered in future discussions on risk evaluation of ENMs in urban water systems.

Strong photon antibunching in weakly nonlinear two-dimensional exciton-polaritons

NASA Astrophysics Data System (ADS)

Ryou, Albert; Rosser, David; Saxena, Abhi; Fryett, Taylor; Majumdar, Arka

2018-06-01

A deterministic and scalable array of single photon nonlinearities in the solid state holds great potential for both fundamental physics and technological applications, but its realization has proved extremely challenging. Despite significant advances, leading candidates such as quantum dots and group III-V quantum wells have yet to overcome their respective bottlenecks in random positioning and weak nonlinearity. Here we consider a hybrid light-matter platform, marrying an atomically thin two-dimensional material to a photonic crystal cavity, and analyze its second-order coherence function. We identify several mechanisms for photon antibunching under different system parameters, including one characterized by large dissipation and weak nonlinearity. Finally, we show that by patterning the two-dimensional material into different sizes, we can drive our system dynamics from a coherent state into a regime of strong antibunching with second-order coherence function g(2 )(0 ) ˜10-3 , opening a possible route to scalable, on-chip quantum simulations with correlated photons.

Integrated Approach to Repair and Seismic Strengthening of Mustafa Pasha Mosque in Skopje

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sendova, Veronika; Gavrilovic, Predrag; Stojanoski, Blagojce

2008-07-08

Mustafa Pasha's Mosque is one of the biggest and the best preserved monuments of the Ottoman sacral architecture in Skopje and the Balkan. As a cultural historic monument of an extraordinary importance for the city of Skopje and Republic of Macedonia, it is under protection of the Law on Protection of Cultural Heritage. IZIIS is currently elaborating a project on repair and strengthening of Mustafa Pasha's mosque. Respecting the modern requirements in protection of historical monuments, as is the main principles of seismic strengthening are: application of new technologies and materials, reversibility and invisibility of the applied technique. The conceptmore » of structural strengthening and repair aimed at reaching the designed level of earthquake protection has been selected based on: (i) investigations of the soil conditions, (ii) investigations of the characteristics of the built-in materials, (iii) investigation of the main dynamic characteristics, as well as (iv) previous experimental investigation of the mosque model.« less

ELISA reader does not interfere by mobile phone radiofrequency radiation

PubMed Central

Mortazavi, Seyyed Mohammad Javad; Baradaran-Ghahfarokhi, Hamid Reza; Abdi, Mohammad Reza; Baradaran-Ghahfarokhi, Milad; Mostafavi, Nayyer Sadat; Mahmoudi, Golshan; Berenjkoub, Nafiseh; Akmali, Zahra; Hossein-Beigi, Fahimeh; Arsang, Vajiheh

2016-01-01

Background: The increasing number of mobile phones can physically cause electromagnetic interference (EMI) in medical environments; can also cause errors in immunoassays in laboratories. The ELISA readers are widely used as a useful diagnostic tool for Enzymun colorimetric assay in medicine. The aim of this study was to investigate whether the ELISA reader could be interfered by the exposure to the 900 MHz cell phones in the laboratory. Materials and Methods: Human serum samples were collected from 14 healthy donors (9 women and 5 men) and each sample was divided into four aliquots and was placed into four batches for the in-vitro quantitative determination of human chorionic gonadotropin (hCG). During colorimetric reading of the first, second, and third batches, the ELISA reader (Stat Fax 2100, Awareness Technology, Inc., USA) was exposed to 0.5, 1.0, and 2.0 W exposure of 900 MHz radiation, respectively. For the forth batch (control group), no radiation was applied. All experiments were performed comparing ELISA read out results of the I, II, and III batches with the control batch, using the Wilcoxon test with criterion level of P = 0.050. Results: The final scores in the exposed batches I, II, and III were not statistically significant relative to the control batch (P > 0.05). The results showed that 900 MHz radiation exposure did not alter the ELISA measured levels of hCG hormone in I (P = 0.219), II (P = 0.909), and III (P = 0.056) batches compared to the control batch. Conclusion: This study showed that ELISA reader does not interfere by mobile phone RF radiation at a closed contact (less than 5 cm distance). However, we recommend that medical institutions discuss these issues in the context of their specific use of technologies and frame a policy that is clear and straightforward to guide staff, patients, and visitors. PMID:27376040

High-efficiency emitting materials based on phenylquinoline/carbazole-based compounds for organic light emitting diode applications

NASA Astrophysics Data System (ADS)

Jin, Sung-Ho

2009-08-01

Highly efficient light-emitting materials based on phenylquinoline-carbazole derivative has been synthesized for organic-light emitting diodes (OLEDs). The materials form high quality amorphous thin films by thermal evaporation and the energy levels can be easily adjusted by the introduction of different electron donating and electron withdrawing groups on carbazoylphenylquinoline. Non-doped deep-blue OLEDs using Et-CVz-PhQ as the emitter show bright emission (CIE coordinates, x=0.156, y=0.093) with an external quantum efficiency of 2.45 %. Furthermore, the material works as an excellent host material for BCzVBi to get high-performance OLEDs with excellent deep-blue CIE coordinates (x=0.155, y=0.157), high power efficiency (5.98 lm/W), and high external quantum efficiency (5.22 %). Cyclometalated Ir(III) μ-chloride bridged dimers were synthesized by iridium trichloride hydrate with an excess of our developed deep-blue emitter, Et-CVz-PhQ. The Ir(III) complexes were prepared by the dimers with the corresponding ancillary ligands. The chloride bridged diiridium complexes can be easily converted to mononuclear Ir(III) complexes by replacing the two bridging chlorides with bidentate monoanionic ancillary ligands. Among the various types of ancillary ligands, we firstly used picolinic acid N-oxide, including picolinic acid and acetylacetone as an ancillary ligands for Ir(III) complexes. The PhOLEDs also shows reasonably high brightness and good luminance efficiency of 20,000 cd/m2 and 12 cd/A, respectively.

QWIP focal plane arrays performances from MWIR up to VLWIR

NASA Astrophysics Data System (ADS)

Robo, J. A.; Costard, E.; Truffer, J. P.; Nedelcu, A.; Marcadet, X.; Bois, P.

2009-05-01

Since 2002, the THALES Group has been manufacturing sensitive arrays using QWIP technology based on GaAs and related III-V compounds, at the Alcatel-Thales-III-V Lab (formerly part of THALES Research and Technology Laboratory). In the past researchers claimed many advantages of QWIPs. Uniformity was one of these and has been the key parameter for the production to start. Another widely claimed advantage for QWIPs was the so-called band-gap engineering and versatility of the III-V processing allowing the custom design of quantum structures at various wavelengths in MWIR, LWIR and VLWIR. An overview of the available performances of QWIPs in the whole infrared spectrum is presented here. We also discuss about the under-development products such as dual band and polarimetric structures.

40 CFR 211.210-2 - Labeling requirements.

Code of Federal Regulations, 2010 CFR

2010-07-01

... constant); (ii) Ear cup volume or shape; (iii) Mounting of ear cup on head band; (iv) Ear cushion; (v... tension (spring constant); (ii) Mounting of plug on head band; (iii) Shape of plug; (iv) Material...

10 CFR 73.25 - Performance capabilities for physical protection of strategic special nuclear material in transit.

Code of Federal Regulations, 2012 CFR

2012-01-01

... tampering with transports and cargo containers; and (iii) Surveillance subsystems and procedures to detect... to establish activities for transferring cargo in emergency situations; and (iii) Removal controls...

10 CFR 73.25 - Performance capabilities for physical protection of strategic special nuclear material in transit.

Code of Federal Regulations, 2011 CFR

2011-01-01

... tampering with transports and cargo containers; and (iii) Surveillance subsystems and procedures to detect... to establish activities for transferring cargo in emergency situations; and (iii) Removal controls...

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

NASA Astrophysics Data System (ADS)

Biyikli, Necmi; Haider, Ali

2017-09-01

In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

Crack Growth Mechanisms under Anti-Plane Shear in Composite Laminates

NASA Astrophysics Data System (ADS)

Horner, Allison Lynne

The research conducted for this dissertation focuses on determining the mechanisms associated with crack growth in polymer matrix composite laminates subjected to anti-plane shear (mode III) loading. For mode III split-beam test methods were proposed, and initial evaluations were conducted. A single test method was selected for further evaluation. Using this test method, it was determined that the apparent mode III delamination toughness, GIIIc , depended on geometry, which indicated a true material property was not being measured. Transverse sectioning and optical microscopy revealed an array of transverse matrix cracks, or echelon cracks, oriented at approximately 45° and intersecting the plane of the delamination. Subsequent investigations found the echelon array formed prior to the onset of planar delamination advance and that growth of the planar delamination is always coupled to echelon array formation in these specimens. The evolution of the fracture surfaces formed by the echelon array and planar delamination were studied, and it was found that the development was similar to crack growth in homogenous materials subjected to mode III or mixed mode I-III loading, although the composite laminate architecture constrained the fracture surface development differently than homogenous materials. It was also found that, for split-beam specimens such as those used herein, applying an anti-plane shear load results in twisting of the specimen's uncracked region which gives rise to a mixed-mode I-III load condition. This twisting has been related to the apparent mode III toughness as well as the orientation of the transverse matrix cracks. A finite element model was then developed to study the mechanisms of initial echelon array formation. From this, it is shown that an echelon array will develop, but will become self-limiting prior to the onset of planar delamination growth.

Structural and thermochemical Aspects of (III-V)IV3 Material Assembly from First Principles

NASA Astrophysics Data System (ADS)

Chizmeshya, Andrew; Kouvetakis, John

2014-03-01

Alloys with (III-V)-(IV) compositions, including Si3(AlP), Si5-2y(AlP)y, Si3Al(As1-xNx), Si5-2yAl(P1-xNx)y and Ge5-2y(InP)y and have recently been synthesized as mono-crystalline films on Si substrates, using a synthesis route specifically designed to avoid phase separation between the III-V and IV constituents. Molecular ``building blocks'' containing group-V-centered III-V-IV3 cores, formed via interactions of group-III atoms and reactive silyly/germyl hydride precursors of desired composition (e.g, P(SiH3)3 , P(GeH3)3 , etc), assemble to form stable, covalent, diamond-like materials with the inherent tetrahedral symmetry and composition of the III-V-IV3 units. The resulting systems may provide access to a broad range of new semiconductor systems with extended optoelectronic properties, provided that the required molecular sources are available, the thermodynamic processes are viable, and the resulting alloy composition can be tuned to lattice-match the growth substrate. Molecular/solid-state simulations are used to identify promising synthetic pathways and guide the epitaxial creation of new (III-V)-(IV) materials. The thermodynamics of gas phase synthesis reactions, energetic stability of the alloys, and their epitaxial/chemical compatibility with the substrate are combined to form a global figure of merit. The latter corroborates the synthesis of known systems and predicts that formation of GaPSi3/Si(100), GaAsSi3/SiGe(100), AlPGe3/Ge(100) and InAsSi3/Ge(100) may also be favorable. Supported by NSF-DMR under SusChEM award #1309090.

Uptake Mechanisms of Eu(III) on Hydroxyapatite: A Potential Permeable Reactive Barrier Backfill Material for Trapping Trivalent Minor Actinides.

PubMed

Xu, Lin; Zheng, Tao; Yang, Shitong; Zhang, Linjuan; Wang, Jianqiang; Liu, Wei; Chen, Lanhua; Diwu, Juan; Chai, Zhifang; Wang, Shuao

2016-04-05

The permeable reactive barrier (PRB) technique has attracted an increasing level of attention for the in situ remediation of contaminated groundwater. In this study, the macroscopic uptake behaviors and microscopic speciation of Eu(III) on hydroxyapatite (HAP) were investigated by a combination of theoretical modeling, batch experiments, powder X-ray diffraction (PXRD) fitting, and X-ray absorption spectroscopy (XAS). The underlying removal mechanisms were identified to further assess the application potential of HAP as an effective PRB backfill material. The macroscopic analysis revealed that nearly all dissolved Eu(III) in solution was removed at pH 6.5 within an extremely short reaction time of 5 min. In addition, the thermodynamic calculations, desorption experiments, and PXRD and XAS analyses definitely confirmed the formation of the EuPO4·H2O(s) phase during the process of uptake of dissolved Eu(III) by HAP via the dissolution-precipitation mechanism. A detailed comparison of the present experimental findings and related HAP-metal systems suggests that the relative contribution of precipitation to the total Eu(III) removal increases as the P:Eu ratio decreases. The dosage of HAP-based PRB for the remediation of groundwater polluted by Eu(III) and analogous trivalent actinides [e.g., Am(III) and Cm(III)] should be strictly controlled depending on the dissolved Eu(III) concentration to obtain an optimal P:M (M represents Eu, Am, or Cm) ratio and treatment efficiency.

MBE growth technology for high quality strained III-V layers

NASA Technical Reports Server (NTRS)

Grunthaner, Frank J. (Inventor); Liu, John K. (Inventor); Hancock, Bruce R. (Inventor)

1990-01-01

The III-V films are grown on large automatically perfect terraces of III-V substrates which have a different lattice constant, with temperature and Group III and V arrival rates chosen to give a Group III element stable surface. The growth is pulsed to inhibit Group III metal accumulation of low temperature, and to permit the film to relax to equilibrium. The method of the invention: (1) minimizes starting step density on sample surface; (2) deposits InAs and GaAs using an interrupted growth mode (0.25 to 2 monolayers at a time); (3) maintains the instantaneous surface stoichiometry during growth (As-stable for GaAs, In-stable for InAs); and (4) uses time-resolved RHEED to achieve aspects (1) through (3).

An Investigation into III-V Compounds to Reach 20% Efficiency with Minimum Cell Thickness in Ultrathin-Film Solar Cells

NASA Astrophysics Data System (ADS)

Haque, K. A. S. M. Ehteshamul; Galib, Md. Mehedi Hassan

2013-10-01

III-V single-junction solar cells have already achieved very high efficiency levels. However, their use in terrestrial applications is limited by the high fabrication cost. High-efficiency, ultrathin-film solar cells can effectively solve this problem, as their material requirement is minimum. This work presents a comparison among several III-V compounds that have high optical absorption capability as well as optimum bandgap (around 1.4 eV) for use as solar cell absorbers. The aim is to observe and compare the ability of these materials to reach a target efficiency level of 20% with minimum possible cell thickness. The solar cell considered has an n-type ZnSe window layer, an n-type Al0.1Ga0.9As emitter layer, and a p-type Ga0.5In0.5P back surface field (BSF) layer. Ge is used as the substrate. In the initial design, a p-type InP base was sandwiched between the emitter and the BSF layer, and the design parameters for the device were optimized by analyzing the simulation outcomes with ADEPT/F, a one-dimensional (1D) simulation tool. Then, the minimum cell thickness that achieves 20% efficiency was determined by observing the efficiency variation with cell thickness. Afterwards, the base material was changed to a few other selected III-V compounds, and for each case, the minimum cell thickness was determined in a similar manner. Finally, these cell thickness values were compared and analyzed to identify more effective base layer materials for III-V single-junction solar cells.

Development of optical sciences in Poland

NASA Astrophysics Data System (ADS)

Romaniuk, Ryszard S.

2013-10-01

Research and technical communities for optics, photonics and optoelectronics is grouped in this country in several organizations and institutions. These are: Photonics Society of Poland (PSP), Polish Committee of Optoelectronics of SEP, Photonics Section of KEiT PAN, Laser Club at WAT, and Optics Section of PTF. Each of these communities keeps slightly different specificity. PSP publishes a quarterly journal Photonics Letters of Poland, stimulates international cooperation, and organizes conferences during Industrial Fairs on Innovativeness. PKOpto SEP organizes didactic diploma competitions in optoelectronics. KEiT PAN takes patronage over national conferences in laser technology, optical fiber technology and communications, and photonics applications. SO-PTF has recently taken a decision to organize a cyclic event "Polish Optical Conference". The third edition of this conference PKO'2013 was held in Sandomierz on 30.06-04.07.2013. The conference scientific and technical topics include: quantum and nonlinear optics, photon physics, optic and technology of lasers and other sources of coherent radiation, optoelectronics, optical integrated circuits, optical fibers, medical optics, instrumental optics, optical spectroscopy, optical metrology, new optical materials, applications of optics, teaching in optics. This paper reviews chosen works presented during the III Polish Optical Conference (PKO'2013), representing the research efforts at different national institutions.

2006 NASA Seal/Secondary Air System Workshop; Volume 1

NASA Technical Reports Server (NTRS)

Steinetz, Bruce, M. (Editor); Hendricks, Robert C. (Editor); Delgado, Irebert (Editor)

2007-01-01

The 2006 NASA Seal/Secondary Air System workshop covered the following topics: (i) Overview of NASA s new Exploration Initiative program aimed at exploring the Moon, Mars, and beyond; (ii) Overview of NASA s new fundamental aeronautics technology project; (iii) Overview of NASA Glenn Research Center s seal project aimed at developing advanced seals for NASA s turbomachinery, space, and reentry vehicle needs; (iv) Reviews of NASA prime contractor, vendor, and university advanced sealing concepts including tip clearance control, test results, experimental facilities, and numerical predictions; and (v) Reviews of material development programs relevant to advanced seals development. Turbine engine studies have shown that reducing seal leakages as well as high-pressure turbine (HPT) blade tip clearances will reduce fuel burn, lower emissions, retain exhaust gas temperature margin, and increase range. Several organizations presented development efforts aimed at developing faster clearance control systems and associated technology to meet future engine needs. The workshop also covered several programs NASA is funding to develop technologies for the Exploration Initiative and advanced reusable space vehicle technologies. NASA plans on developing an advanced docking and berthing system that would permit any vehicle to dock to any on-orbit station or vehicle. Seal technical challenges (including space environments, temperature variation, and seal-on-seal operation) as well as plans to develop the necessary "androgynous" seal technologies were reviewed. Researchers also reviewed seal technologies employed by the Apollo command module that serve as an excellent basis for seals for NASA s new Crew Exploration Vehicle (CEV).

Rf linearity in low dimensional nanowire mosfets

NASA Astrophysics Data System (ADS)

Razavieh, Ali

Ever decreasing cost of electronics due to unique scaling potential of today's VLSI processes such as CMOS technology along with innovations in RF devices, circuits and architectures make wireless communication an un-detachable part of everyday's life. This rapid transition of communication systems toward wireless technologies over last couple of decades resulted in operation of numerous standards within a small frequency window. More traffic in adjacent frequency ranges imposes more constraints on the linearity of RF front-end stages, and increases the need for more effective linearization techniques. Long-established ways to improve linearity in DSM CMOS technology are focused on system level methods which require complex circuit design techniques due to challenges such as nonlinear output conductance, and mobility degradation especially when low supply voltage is a key factor. These constrains have turned more focus toward improvement of linearity at the device level in order to simplify the existing linearization techniques. This dissertation discusses the possibility of employing nanostructures particularly nanowires in order to achieve and improve RF linearity at the device level by making a connection between the electronic transport properties of nanowires and their circuit level RF characteristics (RF linearity). Focus of this work is mainly on transconductance (gm) linearity because of the following reasons: 1) due to good electrostatics, nanowire transistors show fine current saturation at very small supply voltages. Good current saturation minimizes the output conductance nonlinearities. 2) non-linearity due to the gate to source capacitances (Cgs) can also be ignored in today's operating frequencies due to small gate capacitance values. If three criteria: i) operation in the quantum capacitance limit (QCL), ii) one-dimensional (1-D) transport, and iii) operation in the ballistic transport regime are met at the same time, a MOSFET will exhibit an ideal linear Id-Vgs characteristics with a constant gm of which is independent of the choice of channel material when operated under high enough drain voltages. Unique scaling potential of nanowires in terms of body thickness, channel length, and oxide thickness makes nanowire transistors an excellent device structure of choice to operate in 1-D ballistic transport regime in the QCL. A set of guidelines is provided for material parameters and device dimensions for nanowire FETs, which meet the three criteria of i) 1-D transport ii) operation in the QCL iii) ballistic transport, and challenges and limitations of fulfilling any of the above transport conditions from materials point of view are discussed. This work also elaborates how a non-ideal device, one that approaches but does not perfectly fulfill criteria i) through iii), can be analyzed in terms of its linearity performance. In particular the potential of silicon based devices will be discussed in this context, through mixture of experiment and simulation. 1-D transport is successfully achieved in the lab. QCL is simulated through back calculation of the band movement of the transistors in on-state. Quasi-ballistic transport conditions can be achieved by cooling down the samples to 77K. Since, ballistic transport is challenging to achieve for practical channel lengths in today's leading semiconductor device technologies the effect of carrier back-scattering on RF linearity is explored through third order intercept point (IIP3) analysis. These findings show that for the devices which operate in the QCL, while 1-D sub-bands are involved in carrier transport, current linearity is directly related to the nature of the dominant scattering mechanism in the channel, and can be improved by proper choice of channel material in order to enforce a specific scattering mechanism to prevail in the channel. Usually, in semiconductors, the dominant scattering mechanism in the channel is the superposition of different mechanisms. Suitable choice of channel material and bias conditions can magnify the effect of a particular scattering mechanism to achieve higher linearity levels. The closing section of this thesis focuses on InAS due to its potential for high linearity since it has small effective mass and large mean-free-path.

Evaluation of "Autosense-III" laser detection technology for traffic applications on I-4

DOT National Transportation Integrated Search

2001-11-01

The major tasks of this project include procuring the two AUTOSENSE III units; selecting a site on I-4 for installation of the units, installing the units successfully on I-4, establishing a remote communication link through cellular data line to dow...

30 CFR 57.22101 - Smoking (I-A, II-A, III, and V-A mines).

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Smoking (I-A, II-A, III, and V-A mines). 57.22101 Section 57.22101 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR... Smoking (I-A, II-A, III, and V-A mines). Persons shall not smoke or carry smoking materials, matches, or...

30 CFR 57.22101 - Smoking (I-A, II-A, III, and V-A mines).

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Smoking (I-A, II-A, III, and V-A mines). 57.22101 Section 57.22101 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR... Smoking (I-A, II-A, III, and V-A mines). Persons shall not smoke or carry smoking materials, matches, or...

30 CFR 57.22101 - Smoking (I-A, II-A, III, and V-A mines).

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Smoking (I-A, II-A, III, and V-A mines). 57.22101 Section 57.22101 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR... Smoking (I-A, II-A, III, and V-A mines). Persons shall not smoke or carry smoking materials, matches, or...

30 CFR 57.22101 - Smoking (I-A, II-A, III, and V-A mines).

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Smoking (I-A, II-A, III, and V-A mines). 57.22101 Section 57.22101 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR... Smoking (I-A, II-A, III, and V-A mines). Persons shall not smoke or carry smoking materials, matches, or...

Anion-exchange high-performance liquid chromatography of water-soluble chromium (VI) and chromium (III) complexes in biological materials.

PubMed

Suzuki, Y

1987-04-10

A high-performance anion-exchange liquid chromatograph coupled to visible-range (370 nm) and UV (280 nm) detectors and an atomic-absorption spectrometer allowed the rapid determination of CrVI and/or complexes of CrIII in rat plasma, erythrocyte lysate and liver supernatant treated with CrVI or CrIII in vitro. CrVI in the eluates was determined using both the visible-range detector and atomic-absorption spectrometer (AAS). The detection limits of CrVI in standard solutions using these methods were 2 and 5 ng (signal-to-noise ratio = 2), respectively. Separations of the biological components and of CrIII complexes were monitored by UV and AAS analyses, respectively. Time-related decreases of CrVI accompanied by increases in CrIII complexes were observed, indicating the reduction of CrVI by some of the biological components. The reduction rates were considerably higher in the liver supernatant and erythrocyte lysate than in the plasma. These results indicate that the anion-exchange high-performance liquid chromatographic system is useful for simultaneous determination of CrVI and CrIII complexes in biological materials.

Fast Photo-detection in Phototransistors based on Group III-VI Layered Materials.

NASA Astrophysics Data System (ADS)

Patil, Prasanna; Ghosh, Sujoy; Wasala, Milinda; Lei, Sidong; Vajtai, Robert; Ajayan, Pulickel; Talapatra, Saikat

Response time of a photo detector is one of the crucial aspect of photo-detection. Recently it has been shown that direct band gap of few layered group III-VI materials helps in increased absorption of light thereby enhancing the photo responsive properties of these materials. Ternary system of Copper Indium Selenide has been extensively used in optoelectronics industry and it is expected that 2D layered structure of Copper Indium Selenide will be a key component of future optoelectronics devices based on 2D materials. Here we report fast photo detection in few layers of Copper Indium Selenide (CuIn7Se11) phototransistor. Few-layers of CuIn7Se11 flakes were exfoliated from crystals grown using chemical vapor transport technique. Our photo response characterization indicates responsivity of 104 mA/W with external quantum efficiency exceeding 103. We have found response time of few μs which is one of the fastest response among photodetectors based on 2D materials. We also found specific detectivity of 1012 Jones which is an order higher than conventional photodetectors. A comparison between response times of various layered group III-VI materials will be presented and discussed. This work is supported by the U.S. Army Research Office through a MURI Grant # W911NF-11-1-0362.

Synthesis of the BCDE molecular fragment of azadiradione mediated by titanocene(III).

PubMed

Fernández-Mateos, A; Madrazo, S Encinas; Teijón, P Herrero; Clemente, R Rabanedo; González, R Rubio; González, F Sanz

2013-10-04

A practical, short, and diastereoselective synthesis of the azadiradione BCDE fragment from a readily available starting material is described. The key step was the titanocene(III)-promoted tandem cyclization of unsaturated epoxy nitrile.

III-V quantum light source and cavity-QED on silicon.

PubMed

Luxmoore, I J; Toro, R; Del Pozo-Zamudio, O; Wasley, N A; Chekhovich, E A; Sanchez, A M; Beanland, R; Fox, A M; Skolnick, M S; Liu, H Y; Tartakovskii, A I

2013-01-01

Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III-V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III-V material grown directly on silicon substrates. The high quality of the III-V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems.

Effects of water chemistry on arsenic removal from drinking water by electrocoagulation.

PubMed

Wan, Wei; Pepping, Troy J; Banerji, Tuhin; Chaudhari, Sanjeev; Giammar, Daniel E

2011-01-01

Exposure to arsenic through drinking water poses a threat to human health. Electrocoagulation is a water treatment technology that involves electrolytic oxidation of anode materials and in-situ generation of coagulant. The electrochemical generation of coagulant is an alternative to using chemical coagulants, and the process can also oxidize As(III) to As(V). Batch electrocoagulation experiments were performed in the laboratory using iron electrodes. The experiments quantified the effects of pH, initial arsenic concentration and oxidation state, and concentrations of dissolved phosphate, silica and sulfate on the rate and extent of arsenic removal. The iron generated during electrocoagulation precipitated as lepidocrocite (γ-FeOOH), except when dissolved silica was present, and arsenic was removed by adsorption to the lepidocrocite. Arsenic removal was slower at higher pH. When solutions initially contained As(III), a portion of the As(III) was oxidized to As(V) during electrocoagulation. As(V) removal was faster than As(III) removal. The presence of 1 and 4 mg/L phosphate inhibited arsenic removal, while the presence of 5 and 20 mg/L silica or 10 and 50 mg/L sulfate had no significant effect on arsenic removal. For most conditions examined in this study, over 99.9% arsenic removal efficiency was achieved. Electrocoagulation was also highly effective at removing arsenic from drinking water in field trials conducted in a village in Eastern India. By using operation times long enough to produce sufficient iron oxide for removal of both phosphate and arsenate, the performance of the systems in field trials was not inhibited by high phosphate concentrations. Copyright © 2010 Elsevier Ltd. All rights reserved.

MINE WASTE TECHNOLOGY PROGRAM PREVENTION OF ACID MINE DRAINAGE GENERATION FROM OPEN-PIT HIGHWALLS

EPA Science Inventory

This document summarizes the results of Mine Waste Technology Program Activity III, Project 26, Prevention of Acid Mine Drainage Generation from Open-Pit Highwalls. The intent of this project was to obtain performance data on the ability of four technologies to prevent the gener...

6 CFR 25.6 - Procedures for designation of qualified anti-terrorism technologies.

Code of Federal Regulations, 2011 CFR

2011-01-01

...; (ii) Classified and otherwise confidential studies; (iii) Studies, tests, or other performance records...) Perform studies or analyses of the subject Technology or the insurance market for such Technology; and (v... prior experience and, thus, may be expedited. The Under Secretary may consider any scientific studies...

6 CFR 25.6 - Procedures for designation of qualified anti-terrorism technologies.

Code of Federal Regulations, 2012 CFR

2012-01-01

...; (ii) Classified and otherwise confidential studies; (iii) Studies, tests, or other performance records...) Perform studies or analyses of the subject Technology or the insurance market for such Technology; and (v... prior experience and, thus, may be expedited. The Under Secretary may consider any scientific studies...

Photoelectrochemistry of III-V epitaxial layers and nanowires for solar energy conversion

NASA Astrophysics Data System (ADS)

Parameshwaran, Vijay; Enck, Ryan; Chung, Roy; Kelley, Stephen; Sampath, Anand; Reed, Meredith; Xu, Xiaoqing; Clemens, Bruce

2017-05-01

III-V materials, which exhibit high absorption coefficients and charge carrier mobility, are ideal templates for solar energy conversion applications. This work describes the photoelectrochemistry research in several IIIV/electrolyte junctions as an enabler for device design for solar chemical reactions. By designing lattice-matched epitaxial growth of InGaP and GaP on GaAs and Si, respectively, extended depletion region electrodes achieve photovoltages which provide an additional boost to the underlying substrate photovoltage. The InGaP/GaAs and GaP/Si electrodes drive hydrogen evolution currents under aqueous conditions. By using nanowires of InN and InP under carefully controlled growth conditions, current and capacitance measurements are obtained to reveal the nature of the nanowire-electrolyte interface and how light is translated into photocurrent for InP and a photovoltage in InN. The materials system is expanded into the III-V nitride semiconductors, in which it is shown that varying the morphology of GaN on silicon yields insights to how the interface and light conversion is modulated as a basis for future designs. Current extensions of this work address growth and tuning of the III-V nitride electrodes with doping and polarization engineering for efficient coupling to solar-driven chemical reactions, and rapid-throughput methods for III-V nanomaterials synthesis in this materials space.

Effects of cellulose degradation products on the mobility of Eu(III) in repositories for low and intermediate level radioactive waste.

PubMed

Diesen, Veronica; Forsberg, Kerstin; Jonsson, Mats

2017-10-15

The deep repository for low and intermediate level radioactive waste SFR in Sweden will contain large amounts of cellulosic waste materials contaminated with radionuclides. Over time the repository will be filled with water and alkaline conditions will prevail. In the present study degradation of cellulosic materials and the ability of cellulosic degradation products to solubilize and thereby mobilise Eu(III) under repository conditions has been investigated. Further, the possible immobilization of Eu(III) by sorption onto cement in the presence of degradation products has been investigated. The cellulosic material has been degraded under anaerobic and aerobic conditions in alkaline media (pH: 12.5) at ambient temperature. The degradation was followed by measuring the total organic carbon (TOC) content in the aqueous phase as a function of time. After 173days of degradation the TOC content is highest in the anaerobic artificial cement pore water (1547mg/L). The degradation products are capable of solubilising Eu(III) and the total europium concentration in the aqueous phase was 900μmol/L after 498h contact time under anaerobic conditions. Further it is shown that Eu(III) is adsorbed to the hydrated cement to a low extent (<9μmol Eu/g of cement) in the presence of degradation products. Copyright © 2017 Elsevier B.V. All rights reserved.

Differential determination of chromium(VI) and total chromium in natural waters using flow injection on-line separation and preconcentration electrothermal atomic absorption spectrometry.

PubMed

Sperling, M; Yin, X; Welz, B

1992-03-01

A rapid, sensitive and selective method for the differential determination of CrIII and CrVI in natural waters is described. Chromium(vi) can be determined directly by flow injection on-line sorbent extraction preconcentration coupled with electrothermal atomic absorption spectrometry using sodium diethyldithiocarbamate as the complexing agent and C18 bonded silica reversed-phase sorbent as the column material. Total Cr can be determined after oxidation of CrIII to CrVI by potassium peroxydisulfate. Chromium(III) can be calculated by difference. The optimum conditions for sorbent extraction of CrVI and oxidation of CrIII to CrVI are evaluated. A 12-fold enhancement in sensitivity compared with direct introduction of 40 microliters samples was achieved after preconcentration for 60 s, giving detection limits of 16 ng l-1 for CrVI and 18 ng l-1 for total Cr (based on 3 sigma). Results obtained for sea-water and river water reference materials were all within the certified range for total Cr with a precision of better than 10% relative standard deviation in the range 100-200 ng l-1. The selectivity of the determination of CrVI was evaluated by analysing spiked reference materials in the presence of CrIII, resulting in quantitative recovery of CrVI.

Improving Minuteman III Maintenance Concepts

DTIC Science & Technology

2017-03-23

INSTITUTE OF TECHNOLOGY Wright-Patterson Air Force Base, Ohio DISTRIBUTION STATEMENT A. APPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED...Department of Operational Sciences Graduate School of Engineering and Management Air Force Institute of Technology Air University Air Education and

Symposium III Proceedings (Muncie, Indiana, October 23, 1981).

ERIC Educational Resources Information Center

Wright, Thomas, Ed.

Symposium III, a continuation of a series of meetings, was designed for exchanging ideas and structures for contemporary industrial arts curriculum development. The meeting provided practical classroom-oriented suggestions for teaching industry/technology-based industrial arts. The design of the symposium provided a keynote address, which gave a…

Information Technology: Making It All Fit. Track III: Financial Impact and Considerations.

ERIC Educational Resources Information Center

CAUSE, Boulder, CO.

Seven papers from the 1988 CAUSE conference's Track III, Financial Impact and Considerations, are presented. They include: "Providing Applications Development Services in a Competitive Environment" (Donald E. Heller and Mary Ellen Bushnell); "The Cost of Not Staying Current" (Jack T. Tinsley and Betty R. Nyer); "Project…

Optical Features of Efficient Europium(III) Complexes with β-Diketonato and Auxiliary Ligands and Mechanistic Investigation of Energy Transfer Process.

PubMed

Bala, Manju; Kumar, Satish; Taxak, V B; Boora, Priti; Khatkar, S P

2016-09-01

Two new europium (III) complexes have been synthesized with 1,3-[bis(4-methoxyphenyl)]propane-1,3-dionato (HBMPD) as main ligand and 2,2'-bipyridyl (bipy) or 1,10-phenanthroline (phen) as an auxiliary ligand. The main ligand HBMPD has been synthesized by ecofriendly microwave approach and complexes by solution precipitation method. The resulting materials are characterized by IR, (1)H-NMR, elemental analysis, X-ray diffraction, UV-visible and TG-DTG techniques. The photoluminescence (PL) spectroscopy depicts the detail analysis of photophysical properties of the complexes, their results show that the ligand interact with Eu (III) ion which act as antenna and transfers the absorbed energy to the central europium(III) ion via sensitization process efficiently. As a consequence of this interaction, these materials exhibit excellent luminescent intensity, long decay time (τ), high quantum efficiency (η) and Judd-Ofelt intensity parameter (Ω2). The CIE coordinates fall under the deep red region, matching well with the NTSC (National Television Standard Committee) standard. Hence, these highly efficient optical materials can be used as a red component in organic light emitting diodes (OLEDs) and full color flat panel displays.

Focal plane arrays from UV up to VLWIR

NASA Astrophysics Data System (ADS)

Costard, E.; Nedelcu, A.; Achouche, M.; Reverchon, J. L.; Truffer, J. P.; Huet, O.; Dua, L.; Robo, J. A.; Marcadet, X.; Brière de l'Isle, N.; Facoetti, H.; Bois, P.

2007-10-01

Since 2002, the THALES Group has been manufacturing sensitive arrays using QWIP technology based on GaAs and related III-V compounds, at the Alcatel-Thales-III-V Lab (formerly part of THALES Research and Technology Laboratory). In the past researchers claimed many advantages of QWIPs. Uniformity was one of these and has been the key parameter for the production to start. Another widely claimed advantage for QWIPs was the so-called band-gap engineering and versatility of the III-V processing allowing the custom design of quantum structures to fulfil the requirements of specific applications such as very long wavelength (VLWIR) or multispectral detection. In this presentation, we give the status of our LWIR QWIP production line, and also the current status of QWIPs for MWIR (<5μm) and VLWIR (>15μm) arrays. As the QWIP technology cannot cover the full electromagnetic spectrum, we develop other semiconductor compounds for SWIR and UV applications. We present here the status of our first FPA realization in UV with GaN alloy, and at 1.5μm with InGaAs photodiodes.

Yellow to greenish-blue colour-tunable photoluminescence and 4f-centered slow magnetic relaxation in a cyanido-bridged Dy(III)(4-hydroxypyridine)-Co(III) layered material.

PubMed

Chorazy, Szymon; Wang, Junhao; Ohkoshi, Shin-Ichi

2016-09-14

A cyanido-bridged layered {[Dy(III)(4-OHpy)2(H2O)3][Co(III)(CN)6]}·0.5H2O (1) (4-OHpy = 4-hydroxypyridine) framework with dual photo-luminescence and magnetic properties was prepared. 1 exhibits visible emission whose color, yellow to greenish-blue, is switchable by selected wavelengths of UV excitation light. Magnetic data revealed that 1 shows not only the slow magnetic relaxation of a typical Dy(III) single-ion origin but also the relaxation process caused by the magnetic dipole-magnetic dipole interactions between the neighbouring Dy(III) centers.

Structural changes of oviduct of freshwater shrimp, Macrobrachium nipponense (Decapoda, Palaemonidae), during spawning*

PubMed Central

Lu, Jian-ping; Zhang, Xiao-hui; Yu, Xiao-yun

2006-01-01

The structural change of the oviduct of freshwater shrimp (Macrobrachium nipponense) during spawning was examined by electron microscopy. The oviduct wall structural characteristics seem to be influenced significantly by the spawning process. Before the parturition and ovulation, two types of epithelial cells (types I and II) are found in the epithelium. The free surfaces of type I and type II cells have very dense long microvilli. Under the type I and type II cells, are a relatively thick layer of secreting material and a layer of mostly dead cells. After ovulation, two other types of epithelial cells (types III and IV) are found in the oviduct wall epithelium. The free surface of type III cells only has short microvilli scattered on the surface. The thick layer with secreting material and the dead cell layer disappeared at this stage. In some type III cells, the leaking out of cytoplasm from broken cell membrane led to the death of these type III cells. The transformation of all four types of epithelial cells was in the order: IV→I→II→III. PMID:16365928

A novel composite material based on antimony(III) oxide and amorphous silica

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zemnukhova, Ludmila A.; Panasenko, Alexander E., E-mail: panasenko@ich.dvo.ru

2013-05-01

The composite material nSb₂O₃·mSiO₂·xH₂O was prepared by hydrolysis of SbCl₃ and Na₂SiO₃ in an aqueous medium. It has been shown that the composition of the material is influenced by the ratio of the initial components and the acidity of the reaction medium. The morphology of the material particles and its specific surface area have been determined. The thermal and optic properties were also investigated. - Graphical abstract: Novel composite material containing amorphous silica and crystal antimony(III) oxide has been synthesized by hydrolysis of SbCl₃ and Na₂SiO₃ in an aqueous medium. Highlights: • The composite material nSb₂O₃·mSiO₂·xH₂O was prepared in anmore » aqueous medium. • The composition of the material is controllable by a synthesis conditions. • The morphology of the material and its optic properties have been determined.« less

Modelling and Microstructural Characterization of Sintered Metallic Porous Materials

PubMed Central

Depczynski, Wojciech; Kazala, Robert; Ludwinek, Krzysztof; Jedynak, Katarzyna

2016-01-01

This paper presents selected characteristics of the metallic porous materials produced by the sintering of metal powders. The authors focus on materials produced from the iron powder (Fe) of ASC 100.29 and Distaloy SE. ASC 100.29 is formed by atomization and has a characteristic morphology. It consists of spherical particles of different sizes forming agglomerates. Distaloy SE is also based on the sponge-iron. The porous material is prepared using the patented method of sintering the mixture of iron powder ASC 100.29, Fe(III) oxide, Distaloy SE and Fe(III) oxide in the reducing atmosphere of dissociated ammonia. As a result, the materials with open pores of micrometer sizes are obtained. The pores are formed between iron particles bonded by diffusion bridges. The modelling of porous materials containing diffusion bridges that allows for three-dimensional (3D) imaging is presented. PMID:28773690

Synthesis, structure, and optoelectronic properties of II-IV-V 2 materials

DOE PAGES

Martinez, Aaron D.; Fioretti, Angela N.; Toberer, Eric S.; ...

2017-03-07

II-IV-V 2 materials offer the promise of enhanced functionality in optoelectronic devices due to their rich ternary chemistry. In this review, we consider the potential for new optoelectronic devices based on nitride, phosphide, and arsenide II-IV-V 2 materials. As ternary analogs to the III-V materials, these compounds share many of the attractive features that have made the III-Vs the basis of modern optoelectronic devices (e.g. high mobility, strong optical absorption). Control of cation order parameter in the II-IV-V 2 materials can produce significant changes in optoelectronic properties at fixed chemical composition, including decoupling band gap from lattice parameter. Recent progressmore » has begun to resolve outstanding questions concerning the structure, dopability, and optical properties of the II-IV-V 2 materials. Furthermore, remaining research challenges include growth optimization and integration into heterostructures and devices.« less

Advanced Gas Turbine (AGT) Technology Project

NASA Technical Reports Server (NTRS)

1986-01-01

Engine testing, ceramic component fabrication and evaluation, component performance rig testing, and analytical studies comprised AGT 100 activities during the 1985 year. Ten experimental assemblies (builds) were evaluated using two engines. Accrued operating time was 120 hr of burning and 170 hr total, bringing cumulative total operating time to 395 hr, all devoid of major failures. Tests identified the generator seals as the primary working fluid leakage sources. Power transfer clutch operation was demonstrated. An alpha SiC gasifier rotor engine test resulted in blade tip failures. Recurring case vibration and shaft whip have limited gasifier shaft speeds to 84%. Ceramic components successfully engine tested now include the SiC scroll assembly, Si3N3 turbine rotor, combustor assembly, regenerator disk bulkhead, turbine vanes, piston rings, and couplings. A compressor shroud design change to reduce heat recirculation back to the inlet was executed. Ceramic components activity continues to focus on the development of state-of-the-art material strength characteristics in full-scale engine hardware. Fiber reinforced glass-ceramic composite turbine (inner) backplates were fabricated by Corning Glass Works. The BMAS/III material performed well in engine testing. Backplates of MAS material have not been engine tested.

Synthesis, structure determination and properties of MIL-53as and MIL-53ht: the first CrIII hybrid inorganic-organic microporous solids: CrIII(OH).(O2C-C6H4-CO2).(HO2C-C6H4-CO2H)x.

PubMed

Millange, Franck; Serre, Christian; Férey, Gérard

2002-04-21

The first three-dimensional chromium(III) dicarboxylate compounds have been isolated and their structures solved from powder X-ray diffraction data; the flexible framework of these materials delimits large pores.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderson, Virginia R.; Nepal, Neeraj; Johnson, Scooter D.

Wide bandgap semiconducting nitrides have found wide-spread application as light emitting and laser diodes and are under investigation for further application in optoelectronics, photovoltaics, and efficient power switching technologies. Alloys of the binary semiconductors allow adjustments of the band gap, an important semiconductor material characteristic, which is 6.2 eV for aluminum nitride (AlN), 3.4 eV for gallium nitride, and 0.7 eV for (InN). Currently, the highest quality III-nitride films are deposited by metalorganic chemical vapor deposition and molecular beam epitaxy. Temperatures of 900 °C and higher are required to deposit high quality AlN. Research into depositing III-nitrides with atomic layermore » epitaxy (ALEp) is ongoing because it is a fabrication friendly technique allowing lower growth temperatures. Because it is a relatively new technique, there is insufficient understanding of the ALEp growth mechanism which will be essential to development of the process. Here, grazing incidence small angle x-ray scattering is employed to observe the evolving behavior of the surface morphology during growth of AlN by ALEp at temperatures from 360 to 480 °C. Increased temperatures of AlN resulted in lower impurities and relatively fewer features with short range correlations.« less

Beamline P02.1 at PETRA III for high-resolution and high-energy powder diffraction

PubMed Central

Dippel, Ann-Christin; Liermann, Hanns-Peter; Delitz, Jan Torben; Walter, Peter; Schulte-Schrepping, Horst; Seeck, Oliver H.; Franz, Hermann

2015-01-01

Powder X-ray diffraction techniques largely benefit from the superior beam quality provided by high-brilliance synchrotron light sources in terms of photon flux and angular resolution. The High Resolution Powder Diffraction Beamline P02.1 at the storage ring PETRA III (DESY, Hamburg, Germany) combines these strengths with the power of high-energy X-rays for materials research. The beamline is operated at a fixed photon energy of 60 keV (0.207 Å wavelength). A high-resolution monochromator generates the highly collimated X-ray beam of narrow energy bandwidth. Classic crystal structure determination in reciprocal space at standard and non-ambient conditions are an essential part of the scientific scope as well as total scattering analysis using the real space information of the pair distribution function. Both methods are complemented by in situ capabilities with time-resolution in the sub-second regime owing to the high beam intensity and the advanced detector technology for high-energy X-rays. P02.1’s efficiency in solving chemical and crystallographic problems is illustrated by presenting key experiments that were carried out within these fields during the early stage of beamline operation. PMID:25931084

Amino group in Leptothrix sheath skeleton is responsible for direct deposition of Fe(III) minerals onto the sheaths.

PubMed

Kunoh, Tatsuki; Matsumoto, Syuji; Nagaoka, Noriyuki; Kanashima, Shoko; Hino, Katsuhiko; Uchida, Tetsuya; Tamura, Katsunori; Kunoh, Hitoshi; Takada, Jun

2017-07-26

Leptothrix species produce microtubular organic-inorganic materials that encase the bacterial cells. The skeleton of an immature sheath, consisting of organic exopolymer fibrils of bacterial origin, is formed first, then the sheath becomes encrusted with inorganic material. Functional carboxyl groups of polysaccharides in these fibrils are considered to attract and bind metal cations, including Fe(III) and Fe(III)-mineral phases onto the fibrils, but the detailed mechanism remains elusive. Here we show that NH 2 of the amino-sugar-enriched exopolymer fibrils is involved in interactions with abiotically generated Fe(III) minerals. NH 2 -specific staining of L. cholodnii OUMS1 detected a terminal NH 2 on its sheath skeleton. Masking NH 2 with specific reagents abrogated deposition of Fe(III) minerals onto fibrils. Fe(III) minerals were adsorbed on chitosan and NH 2 -coated polystyrene beads but not on cellulose and beads coated with an acetamide group. X-ray photoelectron spectroscopy at the N1s edge revealed that the terminal NH 2 of OUMS1 sheaths, chitosan and NH 2 -coated beads binds to Fe(III)-mineral phases, indicating interaction between the Fe(III) minerals and terminal NH 2 . Thus, the terminal NH 2 in the exopolymer fibrils seems critical for Fe encrustation of Leptothrix sheaths. These insights should inform artificial synthesis of highly reactive NH 2 -rich polymers for use as absorbents, catalysts and so on.

Characterization of Lone Pine, California, tremolite asbestos and preparation of research material

USGS Publications Warehouse

Harper, Martin; Van Gosen, Bradley S.; Crankshaw, Owen S; Doorn, Stacy S; Ennis, J. Todd; Harrison, Sara E

2014-01-01

Well-characterized amphibole asbestos mineral samples are required for use as analytical standards and in future research projects. Currently, the National Institute for Standards and Technology Standard Reference Material samples of asbestos are listed as ‘Discontinued’. The National Institute for Occupational Safety and Health (NIOSH) has a goal under the Asbestos Roadmap of locating and characterizing research materials for future use. Where an initial characterization analysis determines that a collected material is appropriate for use as a research material in terms of composition and asbestiform habit, sufficient amounts of the material will be collected to make it publicly available. An abandoned mine near Lone Pine, California, contains a vein of tremolite asbestos, which was the probable source of a reference material that has been available for the past 17 years from the Health and Safety Laboratory (HSL) in the UK. Newly collected fibrous vein material from this mine was analyzed at Research Triangle Institute (RTI International) with some additional analysis by the US Geological Survey’s Denver Microbeam Laboratory. The analysis at RTI International included: (i) polarized light microscopy (PLM) with a determination of principal optical properties; (ii) X-ray diffraction; (iii) transmission electron microscopy, including energy dispersive X-ray spectroscopy and selected-area electron diffraction; and (iv) spindle stage analysis using PLM to determine whether individual fibers and bundles of the samples were polycrystalline or single-crystal cleavage fragments. The overall findings of the study indicated that the material is tremolite asbestos with characteristics substantially similar to the earlier distributed HSL reference material. A larger quantity of material was prepared by sorting, acid-washing and mixing for sub-division into vials of ~10g each. These vials have been transferred from NIOSH to RTI International, from where they can be obtained on request.

Characterization of Lone Pine, California, Tremolite Asbestos and Preparation of Research Material

PubMed Central

Harper, Martin; Van Gosen, Bradley; Crankshaw, Owen S.; Doorn, Stacy S.; Ennis, Todd J.; Harrison, Sara E.

2016-01-01

Well-characterized amphibole asbestos mineral samples are required for use as analytical standards and in future research projects. Currently, the National Institute for Standards and Technology Standard Reference Material samples of asbestos are listed as ‘Discontinued’. The National Institute for Occupational Safety and Health (NIOSH) has a goal under the Asbestos Roadmap of locating and characterizing research materials for future use. Where an initial characterization analysis determines that a collected material is appropriate for use as a research material in terms of composition and asbestiform habit, sufficient amounts of the material will be collected to make it publicly available. An abandoned mine near Lone Pine, California, contains a vein of tremolite asbestos, which was the probable source of a reference material that has been available for the past 17 years from the Health and Safety Laboratory (HSL) in the UK. Newly collected fibrous vein material from this mine was analyzed at Research Triangle Institute (RTI International) with some additional analysis by the US Geological Survey’s Denver Microbeam Laboratory. The analysis at RTI International included: (i) polarized light microscopy (PLM) with a determination of principal optical properties; (ii) X-ray diffraction; (iii) transmission electron microscopy, including energy dispersive X-ray spectroscopy and selected-area electron diffraction; and (iv) spindle stage analysis using PLM to determine whether individual fibers and bundles of the samples were polycrystalline or single-crystal cleavage fragments. The overall findings of the study indicated that the material is tremolite asbestos with characteristics substantially similar to the earlier distributed HSL reference material. A larger quantity of material was prepared by sorting, acid-washing and mixing for sub-division into vials of ~10 g each. These vials have been transferred from NIOSH to RTI International, from where they can be obtained on request. PMID:25268000

Cation-induced coagulation of aquatic plant-derived dissolved organic matter: Investigation by EEM-PARAFAC and FT-IR spectroscopy.

PubMed

Liu, Shasha; Zhu, Yuanrong; Liu, Leizhen; He, Zhongqi; Giesy, John P; Bai, Yingchen; Sun, Fuhong; Wu, Fengchang

2018-03-01

Complexation and coagulation of plant-derived dissolved organic matter (DOM) by metal cations are important biogeochemical processes of organic matter in aquatic systems. Thus, coagulation and fractionation of DOM derived from aquatic plants by Ca(II), Al(III), and Fe(III) ions were investigated. Metal ion-induced removal of DOM was determined by analyzing dissolved organic carbon in supernatants after addition of these metal cations individually. After additions of metal ions, both dissolved and coagulated organic fractions were characterized by use of fluorescence excitation emission matrix-parallel factor (EEM-PARAFAC) analysis and Fourier transform infrared (FT-IR) spectroscopy. Addition of Ca(II), Fe(III) or Al(III) resulted in net removal of aquatic plant-derived DOM. Efficiencies of removal of DOM by Fe(III) or Al(III) were greater than that by Ca(II). However, capacities to remove plant-derived DOM by the three metals were less than which had been previously reported for humic materials. Molecular and structural features of plant-derived DOM fractions in associations with metal cations were characterized by changes in fluorescent components and infrared absorption peaks. Both aromatic and carboxylic-like organic matters could be removed by Ca(II), Al(III) or Fe(III) ions. Whereas organic matters containing amides were preferentially removed by Ca(II), and phenolic materials were selectively removed by Fe(III) or Al(III). These observations indicated that plant-derived DOM might have a long-lasting effect on water quality and organisms due to its poor coagulation with metal cations in aquatic ecosystems. Plant-derived DOM is of different character than natural organic matter and it is not advisable to attempt removal through addition of metal salts during treatment of sewage. Copyright © 2017 Elsevier Ltd. All rights reserved.

A comparison study of the Born effective charges and dielectric properties of the cubic, tetragonal, monoclinic, ortho-I, ortho-II and ortho-III phases of zirconia

NASA Astrophysics Data System (ADS)

Zhang, Yan; Chen, Hua-Xin; Duan, Li; Fan, Ji-Bin; Ni, Lei; Ji, Vincent

2018-07-01

Using density-functional perturbation theory, we systematically investigate the Born effective charges and dielectric properties of cubic, tetragonal, monoclinic, ortho-I (Pbca), ortho-II (Pnma) and ortho-III (Pca21) phases of ZrO2. The magnitudes of the Born effective charges of the Zr and oxygen atoms are greater than their nominal ionic valences (+4 for Zr and -2 for oxygen), indicating a strong dynamic charge transfer from Zr atoms to O atoms and a mixed covalent-ionic bonding in six phases of ZrO2. For all six phases of ZrO2, the electronic contributions εij∞ to the static dielectric constant are rather small (range from 5 to 6.5) and neither strongly anisotropic nor strongly dependent on the structural phase, while the ionic contributions εijion to the static dielectric constant are large and not only anisotropic but also dependent on the structural phase. The average dielectric constant εbar0 of the six ZrO2 phases decreases in the sequence of tetragonal, cubic, ortho-II (Pnma), ortho-I (Pbca), ortho-III (Pca21) and monoclinic. So among six phases of ZrO2, the tetragonal and cubic phases are two suitable phases to replace SiO2 as the gate dielectric material in modern integrated-circuit technology. Furthermore, for the tetragonal ZrO2 the best orientation is [100].

TiO2-photocatalyzed As(III) oxidation in a fixed-bed, flow-through reactor.

PubMed

Ferguson, Megan A; Hering, Janet G

2006-07-01

Compliance with the U.S. drinking water standard for arsenic (As) of 10 microg L(-1) is required in January 2006. This will necessitate implementation of treatment technologies for As removal by thousands of water suppliers. Although a variety of such technologies is available, most require preoxidation of As(III) to As(V) for efficient performance. Previous batch studies with illuminated TiO2 slurries have demonstrated that TiO2-photocatalyzed AS(III) oxidation occurs rapidly. This study examined reaction efficiency in a flow-through, fixed-bed reactor that provides a better model for treatment in practice. Glass beads were coated with mixed P25/sol gel TiO2 and employed in an upflow reactor irradiated from above. The reactor residence time, influent As(III) concentration, number of TiO2 coatings on the beads, solution matrix, and light source were varied to characterize this reaction and determine its feasibility for water treatment. Repeated usage of the same beads in multiple experiments or extended use was found to affect effluent As(V) concentrations but not the steady-state effluent As(III) concentration, which suggests that As(III) oxidation at the TiO2 surface undergoes dynamic sorption equilibration. Catalyst poisoning was not observed either from As(V) or from competitively adsorbing anions, although the higher steady-state effluent As(III) concentrations in synthetic groundwater compared to 5 mM NaNO3 indicated that competitive sorbates in the matrix partially hinder the reaction. A reactive transport model with rate constants proportional to incident light at each bead layer fit the experimental data well despite simplifying assumptions. TiO2-photocatalyzed oxidation of As(III) was also effective under natural sunlight. Limitations to the efficiency of As(III) oxidation in the fixed-bed reactor were attributable to constraints of the reactor geometry, which could be overcome by improved design. The fixed-bed TiO2 reactor offers an environmentally benign method for As(III) oxidation.

7 CFR 46.45 - Procedure in administering section 2(5) of the Act.

Code of Federal Regulations, 2011 CFR

2011-01-01

... corrected before resale; or (iii) To withhold or fail to disclose known material facts with respect to a... complaint; (iii) (A) The schedule for informal disposition is as follows: Violation Disposition 1st (1) 2d...

7 CFR 46.45 - Procedure in administering section 2(5) of the Act.

Code of Federal Regulations, 2013 CFR

2013-01-01

... corrected before resale; or (iii) To withhold or fail to disclose known material facts with respect to a... complaint; (iii) (A) The schedule for informal disposition is as follows: Violation Disposition 1st (1) 2d...

24 CFR 585.307 - Environmental procedures and standards.

Code of Federal Regulations, 2011 CFR

2011-04-01

... within designated coastal barrier resources; (ii) Contaminated by toxic chemicals or radioactive materials; (iii) Located within a floodplain; (iv) A building for which flood insurance protection is... units severely noise-impacted; or (iii) Affects coastal zone management. (3) For new construction...

Novel mesoporous FeAl bimetal oxides for As(III) removal: Performance and mechanism.

PubMed

Ding, Zecong; Fu, Fenglian; Cheng, Zihang; Lu, Jianwei; Tang, Bing

2017-02-01

In this study, novel mesoporous FeAl bimetal oxides were successfully synthesized, characterized, and employed for As(III) removal. Batch experiments were conducted to investigate the effects of Fe/Al molar ratio, dosage, and initial solution pH values on As(III) removal. The results showed that the FeAl bimetal oxide with Fe/Al molar ratio 4:1 (shorten as FeAl-4) can quickly remove As(III) from aqueous solution in a wide pH range. The FeAl-4 before and after reaction with As(III) was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HR-TEM) and selected area electron diffraction (SAED), Brunauer-Emmett-Teller (BET) surface area measurement, and X-ray photoelectron spectroscopy (XPS). The BET results showed that the original FeAl-4 with a high surface area of 223.9 m 2 /g was a mesoporous material. XPS analysis indicated that the surface of FeAl-4 possessed a high concentration of M-OH (where M represents Fe and Al), which was beneficial to the immobility of As(III). The excellent performance of FeAl-4 makes it a potentially attractive material for As(III) removal from aqueous solution. Copyright © 2016 Elsevier Ltd. All rights reserved.

Single-source precursors for ternary chalcopyrite materials, and methods of making and using the same

NASA Technical Reports Server (NTRS)

Banger, Kulbinder K. (Inventor); Hepp, Aloysius F. (Inventor); Harris, Jerry D. (Inventor); Jin, Michael Hyun-Chul (Inventor); Castro, Stephanie L. (Inventor)

2006-01-01

A single source precursor for depositing ternary I-III-VI.sub.2 chalcopyrite materials useful as semiconductors. The single source precursor has the I-III-VI.sub.2 stoichiometry built into a single precursor molecular structure which degrades on heating or pyrolysis to yield the desired I-III-VI.sub.2 ternary chalcopyrite. The single source precursors effectively degrade to yield the ternary chalcopyrite at low temperature, e.g. below 500.degree. C., and are useful to deposit thin film ternary chalcopyrite layers via a spray CVD technique. The ternary single source precursors according to the invention can be used to provide nanocrystallite structures useful as quantum dots. A method of making the ternary single source precursors is also provided.

An overview of the evaluation of oxygen interaction with materials-third phase (EOIM-III) experiment - Space Shuttle Mission 46

NASA Technical Reports Server (NTRS)

Leger, Lubert J.; Koontz, Steven L.; Visentine, James T.; Hunton, Donald

1993-01-01

An overview of EOIM-III, designed to produce benchmark atomic oxygen reactivity data is presented. Ambient density measurements are conducted using a quadrupole mass spectrometer calibrated for atomic oxygen measurements in a unique ground-based test facility. The combination of these data with the predictions of ambient density models permits an assessment of the accuracy of measured reaction rates on a variety of materials, many of which have never been tested in LEO previously.

Luminescent properties of Europium(III) nitrate with 1,10-phenantroline and cinnamic acid in light - Transforming polymer materials

NASA Astrophysics Data System (ADS)

Kalinovskaya, I. V.; Zadorozhnaya, A. N.

2018-04-01

Influence of cinnamic acid on the luminescent properties of the europium(III) nitrate with 1,10-phenantroline in a polymer materials was studied. It was shown that combined use of these rare earth complexes leads to intense luminescence in the 400-700 nm region. Samples containing polymer europium nitrate with 1,10-phenantroline and cinnamic acid at a molar ratio of 1:2,0 had the maximum luminescence intensity and photostability.

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.

PubMed

Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki

2006-05-18

Compact high-efficiency ultraviolet solid-state light sources--such as light-emitting diodes (LEDs) and laser diodes--are of considerable technological interest as alternatives to large, toxic, low-efficiency gas lasers and mercury lamps. Microelectronic fabrication technologies and the environmental sciences both require light sources with shorter emission wavelengths: the former for improved resolution in photolithography and the latter for sensors that can detect minute hazardous particles. In addition, ultraviolet solid-state light sources are also attracting attention for potential applications in high-density optical data storage, biomedical research, water and air purification, and sterilization. Wide-bandgap materials, such as diamond and III-V nitride semiconductors (GaN, AlGaN and AlN; refs 3-10), are potential materials for ultraviolet LEDs and laser diodes, but suffer from difficulties in controlling electrical conduction. Here we report the successful control of both n-type and p-type doping in aluminium nitride (AlN), which has a very wide direct bandgap of 6 eV. This doping strategy allows us to develop an AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED. The emission is attributed to an exciton transition, and represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.

Budding trends in integrated pest management using advanced micro- and nano-materials: Challenges and perspectives.

PubMed

Khandelwal, Neha; Barbole, Ranjit S; Banerjee, Shashwat S; Chate, Govind P; Biradar, Ankush V; Khandare, Jayant J; Giri, Ashok P

2016-12-15

One of the most vital supports to sustain human life on the planet earth is the agriculture system that has been constantly challenged in terms of yield. Crop losses due to insect pest attack even after excessive use of chemical pesticides, are major concerns for humanity and environment protection. By the virtue of unique properties possessed by micro and nano-structures, their implementation in Agri-biotechnology is largely anticipated. Hence, traditional pest management strategies are now forestalling the potential of micro and nanotechnology as an effective and viable approach to alleviate problems pertaining to pest control. These technological innovations hold promise to contribute enhanced productivity by providing novel agrochemical agents and delivery systems. Application of these systems engages to achieve: i) control release of agrochemicals, ii) site-targeted delivery of active ingredients to manage specific pests, iii) reduced pesticide use, iv) detection of chemical residues, v) pesticide degradation, vi) nucleic acid delivery and vii) to mitigate post-harvest damage. Applications of micro and nano-technology are still marginal owing to the perception of low economic returns, stringent regulatory issues involving safety assessment and public awareness over their uses. In this review, we highlight the potential application of micro and nano-materials with a major focus on effective pest management strategies including safe handling of pesticides. Copyright © 2016 Elsevier Ltd. All rights reserved.

Training and Technology for the Disabled. Discovery III Conference Papers (Milwaukee, Wisconsin, March 10-12, 1986).

ERIC Educational Resources Information Center

Smith, Christopher, Ed.

Thirty-three papers are presented from a conference on the application of technology for use in the rehabilitation field. Presentations include "Technology--Opening Doors for Disabled People" (Rochlin, Bowe); "Management Information Systems Development for Rehabilitation Facilities: Critical Factors in Development and Implementation" (Robbins, et…

Role of Mobile Technology in Promoting Campus-Wide Learning Environment

ERIC Educational Resources Information Center

Hussain, Irshad; Adeeb, Muhammad Aslam

2009-01-01

The present study examines the role of mobile technology in promoting campus-wide learning environment. Its main objectives were to a) evaluate the role of mobile technology in higher education in terms of its i). appropriateness ii). flexibility iii). Interactivity, & iv). availability & usefulness and to b). identify the problems of…

Three-Dimensional Printing Based Hybrid Manufacturing of Microfluidic Devices.

PubMed

Alapan, Yunus; Hasan, Muhammad Noman; Shen, Richang; Gurkan, Umut A

2015-05-01

Microfluidic platforms offer revolutionary and practical solutions to challenging problems in biology and medicine. Even though traditional micro/nanofabrication technologies expedited the emergence of the microfluidics field, recent advances in advanced additive manufacturing hold significant potential for single-step, stand-alone microfluidic device fabrication. One such technology, which holds a significant promise for next generation microsystem fabrication is three-dimensional (3D) printing. Presently, building 3D printed stand-alone microfluidic devices with fully embedded microchannels for applications in biology and medicine has the following challenges: (i) limitations in achievable design complexity, (ii) need for a wider variety of transparent materials, (iii) limited z-resolution, (iv) absence of extremely smooth surface finish, and (v) limitations in precision fabrication of hollow and void sections with extremely high surface area to volume ratio. We developed a new way to fabricate stand-alone microfluidic devices with integrated manifolds and embedded microchannels by utilizing a 3D printing and laser micromachined lamination based hybrid manufacturing approach. In this new fabrication method, we exploit the minimized fabrication steps enabled by 3D printing, and reduced assembly complexities facilitated by laser micromachined lamination method. The new hybrid fabrication method enables key features for advanced microfluidic system architecture: (i) increased design complexity in 3D, (ii) improved control over microflow behavior in all three directions and in multiple layers, (iii) transverse multilayer flow and precisely integrated flow distribution, and (iv) enhanced transparency for high resolution imaging and analysis. Hybrid manufacturing approaches hold great potential in advancing microfluidic device fabrication in terms of standardization, fast production, and user-independent manufacturing.

Three-Dimensional Printing Based Hybrid Manufacturing of Microfluidic Devices

PubMed Central

Shen, Richang; Gurkan, Umut A.

2016-01-01

Microfluidic platforms offer revolutionary and practical solutions to challenging problems in biology and medicine. Even though traditional micro/nanofabrication technologies expedited the emergence of the microfluidics field, recent advances in advanced additive manufacturing hold significant potential for single-step, stand-alone microfluidic device fabrication. One such technology, which holds a significant promise for next generation microsystem fabrication is three-dimensional (3D) printing. Presently, building 3D printed stand-alone microfluidic devices with fully embedded microchannels for applications in biology and medicine has the following challenges: (i) limitations in achievable design complexity, (ii) need for a wider variety of transparent materials, (iii) limited z-resolution, (iv) absence of extremely smooth surface finish, and (v) limitations in precision fabrication of hollow and void sections with extremely high surface area to volume ratio. We developed a new way to fabricate stand-alone microfluidic devices with integrated manifolds and embedded microchannels by utilizing a 3D printing and laser micromachined lamination based hybrid manufacturing approach. In this new fabrication method, we exploit the minimized fabrication steps enabled by 3D printing, and reduced assembly complexities facilitated by laser micromachined lamination method. The new hybrid fabrication method enables key features for advanced microfluidic system architecture: (i) increased design complexity in 3D, (ii) improved control over microflow behavior in all three directions and in multiple layers, (iii) transverse multilayer flow and precisely integrated flow distribution, and (iv) enhanced transparency for high resolution imaging and analysis. Hybrid manufacturing approaches hold great potential in advancing microfluidic device fabrication in terms of standardization, fast production, and user-independent manufacturing. PMID:27512530

Electrosorption of As(III) in aqueous solutions with activated carbon as the electrode

NASA Astrophysics Data System (ADS)

Dai, Min; Xia, Ling; Song, Shaoxian; Peng, Changsheng; Rangel-Mendez, Jose Rene; Cruz-Gaona, Roel

2018-03-01

The electrosorption of As(III) in aqueous solutions by using activated carbon (AC) as the electrode was studied in this work. This study was performed through the measurements of adsorption and desorption, Cyclic Voltammetry (CV), Electrochemical Impedance Spectroscopy (EIS) and X-ray photoelectron spectra (XPS). Three parameters, applied voltage, solution pH and initial As(III) concentration, on the electrosoprtion of As(III) were investigated. The experimental results have demonstrated that the electrosorption followed three steps: migration of As(III) to the anode, oxidation of As(III) to As(V) and accumulation of As(V) in the electric double layers of the anode. The electrodorption capacity increased with increasing applied voltage and initial As(III) concentration, whereas the effect of pH was complicated for the variation of arsenite species and the competition of OH-. The oxidation of As(III) increased with the increasing voltage and pH due to the increasing redox potential acted on As(III). The electrosorption served to reduce the toxicity of arsenic and was a promising technology for As(III) removal from water.

Influence of cation choice on magnetic behavior of III-N dilute magnetic semiconductors

NASA Astrophysics Data System (ADS)

Frazier, Rachel Marian

With the increasing interest in spintronics, many attempts have been made at incorporating spin-based functionality into existing semiconductor technology. One approach, utilizing dilute magnetic semiconductors (DMS) formed via introduction of transition metal ions into III-Nitride hosts, would allow for integration of spin based phenomena into current wide bandgap device technology. To accomplish such device structures, it is necessary to achieve single phase transition metal doped GaN and AlN which exhibit room temperature magnetic behavior. Ion implantation is an effective survey method for introduction of various transition metals into AlN. In ion implanted AlN, the Co and Cr doped films showed hysteresis at 300K while the Mn doped material did not. However, it is not a technique which will allow for the development of advanced spin based devices. Such devices will require epitaxial methods of the sort currently used for synthesis of III-Nitride optoelectronics. One such technique, Gas Source Molecular Beam Epitaxy (GSMBE), has been used to synthesize AlN films doped with Cr and Mn. Room temperature ferromagnetism has been observed for AlMnN and AlCrN grown by GSMBE. In both cases, the magnetic signal was found to depend on the flux of the dopant. The magnetization of the AlCrN was found to be an order of magnitude greater than in the AlMnN. The temperature dependent magnetic behavior of AlCrN was also superior to AlMnN; however, the AlCrN was not resistant to thermal degradation. An all-semiconductor tunneling magnetoresistive device (TMR) was grown with GaMnN as a spin injector and AlMnN as a spin filter. The resistance of the device should change with applied magnetic field depending on the magnetization of the injector and filter. However, due to the impurity bands found in the AlMnN, the resistance was found to change very little with magnetic field. To overcome such obstacles as found in the transition metal doped AlN, another dopant must be used. One viable dopant is Gd, which due to the low concentration incorporated in the semiconductor matrix should provide a single impurity level within the DMS instead of an impurity band. The incorporation of Gd into GaN and AlN may be the ultimate dopant for these III-N based DMS.

Human Rehabilitation Techniques. Contract Papers. Volume III, Part B.

ERIC Educational Resources Information Center

Ross, E. C.; And Others

Volume III, Section B of a six-volume final report (which covers the findings of a research project on policy and technology related to rehabilitation of disabled individuals) presents four papers which examine important rehabilitation-oriented issues. In the first paper, "Transportation Problems of Persons with Disabilities--The Federal Response"…

Highway concrete pavement technology development and testing. Volume 5, Field evaluation of Strategic Highway Research Program (SHRP) C-206 test sites (bridge deck overlays)

DOT National Transportation Integrated Search

2006-08-01

Two types of concrete overlays silica fume concrete (SFC) and latex-modified Type III portland cement concrete (LMC-III) were installed ant tested as part of the Strategic Highway Research Program (SHRP) Project C-206: Optimization of Highway Concret...

New Manufacturing Method for Paper Filler and Fiber Material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Doelle, Klaus

2013-08-25

The use of fillers in printing and writing papers has become a prerequisite for competing in a global market to reduce the cost of materials. Use of calcium carbonates (ranging from 18% to 30%) as filler is a common practice in the paper industry but the choices of fillers for each type of papers vary widely according to its use. The market for uncoated digital printing paper is one that continues to introduce exciting growth projections. and it is important to understand the effect that new manufacturing methods of calcium carbonates have on the energy efficiency and paper production. Research conducted under this award showed that the new fiber filler composite material has the potential to increase the paper filler content by up to 5% without losing mechanical properties. Benefits of the technology can be summarized as follows for a 1% filler increase per metric ton of paper produced: (i) production cost savings overmore » $$12, (ii) Energy savings of 100,900 btu, (iii) CO{sub 2} emission savings of 33 lbs, and additional savings for wood preparation, pulping, recovery of 203593 btu with a 46lbs of CO{sub 2} emission savings per 1% filler increase. In addition the technology has the potential to save: (i) additional $$3 per ton of bleached pulp produced, (ii) bleaching energy savings of 170,000 btu, (iii) bleaching CO{sub 2} emission savings of 39 lbs, and (iv) additional savings for replacing conventional bleaching chemicals with a sustainable bleaching chemical is estimated to be 900,000 btu with a 205 lbs of CO{sub 2} emission savings per ton of bleached pulp produced. All the above translates to a estimated annual savings for a 12% filler increase of 296 trillion buts or 51 million barrel of oil equivalent (BOE) or 13.7% of the industries energy demand. This can lead to a increase of renewable energy usage from 56% to close to 70% for the industry sector. CO{sub 2} emission of the industry at a 12% filler increase could be lowered by over 39 million tons annually. If the new technology could be implemented for bleaching process a total annual estimated energy savings potential of 64 trillion buts or 11 million barrel of oil equivalent (BOE) equal to 3% of the paper industries energy demand could be realized. This could lead to a increase of renewable energy usage from 56% to close to 60% for the industry. CO{sub 2} emissions could be lowered by over 7.4 million tons annually. It is estimated that an installed system could also yield a 75 to 100% return of investment (ROI) rate for the capital equipment that need to be installed for the fiber filler composite manufacturing process.« less

FogEye UV Sensor System evaluation : Phase III report.

DOT National Transportation Integrated Search

2002-11-01

FogEye technology offers the potential for operation of electro optical sensors and systems that function "hands-off", over extended distances during varying atmospheric conditions, day and night. The technology has been shown to employ solar blind u...

Human factors phase III : effects of train control technology on operator performance

DOT National Transportation Integrated Search

2005-01-01

This report describes a study evaluating the effects of train control technology on locomotive engineer performance. Several types : of train control systems were evaluated: partial automation (cruise control and programmed stop) and full automation ...

75 FR 20007 - Advisory Committee for Education and Human Resources; Notice of Meeting

Federal Register 2010, 2011, 2012, 2013, 2014

2010-04-16

... Foundation's science, technology, engineering, and mathematics (STEM) education and human resources... Broadening Participation--Undergraduate Science, Technology, Engineering & Mathematics (STEM). III. Discussion of Graduate Education/Career Development Programs. IV. Collaborations with the Department of...

Single passenger rail car impact test. Volume III, Test procedures, instrumentation and data.

DOT National Transportation Integrated Search

2000-01-12

A full-scale impact test was performed November 16, 1999, at the Federal Railroad Administrations Transportation : Technology Center, Pueblo, Colorado, by Transportation Technology Center, Inc., a subsidiary of the Association of : American Railro...

10 CFR 960.5-2-7 - Transportation.

Code of Federal Regulations, 2013 CFR

2013-01-01

... using reasonably available technology; (iii) will not require transportation system components to meet... require the development of new packaging containment technology; (iv) will allow transportation operations... impacts, taking into account programmatic, technical, social, economic, and environmental factors; and (2...

10 CFR 960.5-2-7 - Transportation.

Code of Federal Regulations, 2014 CFR

2014-01-01

... using reasonably available technology; (iii) will not require transportation system components to meet... require the development of new packaging containment technology; (iv) will allow transportation operations... impacts, taking into account programmatic, technical, social, economic, and environmental factors; and (2...

10 CFR 960.5-2-7 - Transportation.

Code of Federal Regulations, 2012 CFR

2012-01-01

... using reasonably available technology; (iii) will not require transportation system components to meet... require the development of new packaging containment technology; (iv) will allow transportation operations... impacts, taking into account programmatic, technical, social, economic, and environmental factors; and (2...

Human factors phase III : effects of train control technology on operator performance.

DOT National Transportation Integrated Search

2005-01-31

This report describes a study evaluating the effects of train control technology on locomotive engineer performance. Several types of train control systems were evaluated: partial automation (cruise control and programmed stop) and full automation we...

47 CFR 64.619 - VRS Access Technology Reference Platform and administrator.

Code of Federal Regulations, 2014 CFR

2014-10-01

... Access Technology Reference Platform shall be a software product that performs consistently with the...) Compensation. The TRS Fund, as defined by § 64.604(a)(5)(iii) of this subpart, may be used to compensate the...

47 CFR 64.619 - VRS Access Technology Reference Platform and administrator.

Code of Federal Regulations, 2013 CFR

2013-10-01

... Access Technology Reference Platform shall be a software product that performs consistently with the...) Compensation. The TRS Fund, as defined by § 64.604(a)(5)(iii) of this subpart, may be used to compensate the...

10 CFR 960.5-2-7 - Transportation.

Code of Federal Regulations, 2010 CFR

2010-01-01

... using reasonably available technology; (iii) will not require transportation system components to meet... require the development of new packaging containment technology; (iv) will allow transportation operations... the affected State that are completed or being developed. (9) A regional meteorological history...

The Texas Remote Sensing Training Project

NASA Technical Reports Server (NTRS)

Wells, J. B.

1975-01-01

The project was designed to train federal, state and regional agency managers, scientists and engineers. A one-week seminar was designed and implemented to build vocabulary, introduce technical subject areas and give students enough training to allow them to relate remote sensing technology to operational agency projects. The seminar was designed to perform the dual function of conveying enough remote sensing information to be of value as a stand-alone and preparing students for detailed pattern recognition training. The LARSYS III portion of the training project was executed exactly as designed in the LARSYS training materials package; the LARSYS package did not contain a LANDSAT training module. Two LANDSAT training modules were developed using Texas LANDSAT data. One module contained central Texas data and the second module contained coastal zone data.

Mn-based ferromagnetic semiconductors

NASA Astrophysics Data System (ADS)

Dietl, Tomasz; Sawicki, Maciej

2003-07-01

The present status of research and prospects for device applications of ferromagnetic (diluted magnetic) semiconductors (DMS) is presented. We review the nature of the electronic states and the mechanisms of the carrier-mediated exchange interactions (mean-field Zener model) in p-type Mn-based III-V and II-VI compounds, highlighting a good correspondence of experimental findings and theoretical predictions. An account of the latest progress on the road of increasing the Currie point to above the room temperature is given for both families of compounds. We comment on a possibility of obtaining ferromagnetism in n-type materials, taking (Zn,Mn)O:Al as the example. Concerning technologically important issue of easy axis and domain engineering, we present theoretical predictions and experimental results on the temperature and carrier concentration driven change of magnetic anisotropy in (Ga,Mn)As.

Transparent Glass Ceramics Doped by Chromium(III) and Chromium(III) and Neodymium(III) as New Materials for Lasers and Luminescent Solar Concentrators.

DTIC Science & Technology

1987-04-30

1.5 ZrO2 * 0.3 As203, 0.024 Cr203, melted under various conditions. Parallel measurements of X-ray diffraction, optical and EPR spectra reveal the...optical and EPR spectra reveal the different formation of gahnite from precursor glass or petalite-like phase. Introduction In a number of recent...conditions on optical and EPR spectra of Cr(III). Further on the parallel changes of spectra and x-ray diffraction patterns are indica- ted. The gahnite

An Assessment of Changes in Science Instruction and Science Facilities Initiated by NDEA Title III Funds Used for High School Science in Tennessee Between 1965 - 1970.

ERIC Educational Resources Information Center

Davis, James Taylor

In this investigation, questionnaires were sent to 64 selected urban and rural high schools that were participating in the NDEA Title III science programs. The study revealed that Title III funds were responsible for the improvement of science laboratories, teaching materials and equipment, and the educational advancement of teachers. New courses…

Assessing the Impact and Effectiveness of the Advanced Technological Education (ATE) Program. Survey Results 2004. Volume III: Status of ATE Projects and Articulation Partnerships

ERIC Educational Resources Information Center

Coryn, Chris L.; Gullickson, Arlen R.; Hanssen, Carl E.

2004-01-01

The Advanced Technological Education (ATE) program is a federally funded program designed to educate technicians for the high-technology disciplines that drive the United State's economy. As stated in the ATE program guidelines, this program promotes improvement in technological education at the undergraduate and secondary school levels by…

As(III) and As(V) removal from the aqueous phase via adsorption onto acid mine drainage sludge (AMDS) alginate beads and goethite alginate beads.

PubMed

Lee, Hongkyun; Kim, Dohyeong; Kim, Jongsik; Ji, Min-Kyu; Han, Young-Soo; Park, Young-Tae; Yun, Hyun-Shik; Choi, Jaeyoung

2015-07-15

Acid mine drainage sludge (AMDS) is a solid waste generated following the neutralization of acid mine drainage (AMD). This material entrapped in calcium alginate was investigated for the sorption of As(III) and As(V). Three different adsorbent materials were prepared: AMDS alginate beads (AABs), goethite alginate beads (GABs), and pure alginate beads. The effects of pH and the adsorption kinetics were investigated, and the adsorption isotherms were also evaluated. The optimum pH range using the AABs was determined to be within 2-10 for As(III) and 2-9 for As(V). Adsorption equilibrium data were evaluated using the Langmuir isotherm model, and the maximum adsorption capacity qmax was 18.25 and 4.97 mg g(-1) for As(III) on AAB and GAB, respectively, and 21.79 and 10.92 mg g(-1) for As(V) on AAB and GAB, respectively. The adsorption of As(III) and As(V) was observed to follow pseudo-second order kinetics. The As K-edge X-ray absorption near-edge structure (XANES) revealed that the adsorbed As(III) on the AABs was oxidized to As(V) via manganese oxide in the AMDS. Copyright © 2015 Elsevier B.V. All rights reserved.

Hybrid III-V/silicon lasers

NASA Astrophysics Data System (ADS)

Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

2014-05-01

The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

Defects and oxidation of group-III monochalcogenide monolayers

NASA Astrophysics Data System (ADS)

Guo, Yu; Zhou, Si; Bai, Yizhen; Zhao, Jijun

2017-09-01

Among various two-dimensional (2D) materials, monolayer group-III monochalcogenides (GaS, GaSe, InS, and InSe) stand out owing to their potential applications in microelectronics and optoelectronics. Devices made of these novel 2D materials are sensitive to environmental gases, especially O2 molecules. To address this critical issue, here we systematically investigate the oxidization behaviors of perfect and defective group-III monochalcogenide monolayers by first-principles calculations. The perfect monolayers show superior oxidation resistance with large barriers of 3.02-3.20 eV for the dissociation and chemisorption of O2 molecules. In contrast, the defective monolayers with single chalcogen vacancy are vulnerable to O2, showing small barriers of only 0.26-0.36 eV for the chemisorption of an O2 molecule. Interestingly, filling an O2 molecule to the chalcogen vacancy of group-III monochalcogenide monolayers could preserve the electronic band structure of the perfect system—the bandgaps are almost intact and the carrier effective masses are only moderately disturbed. On the other hand, the defective monolayers with single vacancies of group-III atoms carry local magnetic moments of 1-2 μB. These results help experimental design and synthesis of group-III monochalcogenides based 2D devices with high performance and stability.

New Generator Technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nielsen, Roy S.

2015-02-17

New generator technology project is driven by the need to be able to remotely deploy generator technology where it is needed, when it is needed. Both the military and aid programs that provide assistance after disasters could use the ability to deploy energy generation that fits the needs of the situation. Currently, pre-specified generators are deployed, sometime more than half way around the world to provide electricity. Through our Phase-I to Phase III DARPA grant, we will provide a mechanism where a 3d print station and raw materials could be shipped to a deployment site and remotely deployed personnel. Thesemore » remote personnel can collaborate with engineers at a home location where 3d print plans can be optimized for the remote purpose. The plans can then be sent electronically to the remote location for printing, much like NASA sent the plans for a socket wrench to the International Space Station for printing in . If multiple generators need to be deployed at different remote locations, within miles of each other the printer rig can be moved to print the generators where they are needed. 3d printing is growing in the field of manufacturing. 3d printing has matured to the point where many types of materials are now available for many types of manufacturing. Both magnetic and electrically conductive material materials have recently been developed which can now lead to 3d printing of engines and generators. Our project will provide a successful printer rig that can be remotely deployed, to print a generator design in the field as well as provide a process for deploying the printed generator as well. This Systems Engineering Management Plan(SEMP) will provide the planning required for a Phase I DARPA grant that may also include goals for Phase II and Phase II grants. The SEMP provides a proposed project schedule, references, system engineering processes, specialty engineering system deployment and product support sections. Each section will state how our company will provide the necessary services to make this project succeed.« less

Application de la technologie des materiaux sol-gel et polymere a l'optique integree

NASA Astrophysics Data System (ADS)

Saddiki, Zakaria

2002-01-01

With the advancement of optical telecommunication systems, "integrated optics" and "optical interconnect" technology are becoming more and more important. The major components of these two technologies are photonic integrated circuits (PICs), optoelectronic integrated circuits (OEICs), and optoelectronic multichip modules ( OE-MCMs). Optical signals are transmitted through optical waveguides that interconnect such components. The principle of optical transmission in waveguides is the same as that in optical fibres. To implement these technologies, both passive and active optical devices are needed. A wide variety of optical materials has been studied, e.g., glasses, lithium niobate, III-V semiconductors, sol-gel and polymers. In particular, passive optical components have been fabricated using glass optical waveguides by ion-exchange, or by flame hydrolysis deposition and reactive ion etching (FHD and RIE ). When using FHD and RIE, a very high temperatures (up to 1300°C) are needed to consolidate silica. This work reports on the fabrication and characterization of a new photo-patternable hybrid organic-inorganic glass sol-gel and polymer materials for the realisation of integrated optic and opto-electronic devices. They exhibit low losses in the NIR range, especially at the most important wavelengths windows for optical communications (1320 nm and 1550 nm). The sol-gel and polymer process is based on photo polymerization and thermo polymerization effects to create the wave-guide. The single-layer film is at low temperature and deep UV-light is employed to make the wave-guide by means of the well-known photolithography process. Like any photo-imaging process, the UV energy should exceed the threshold energy of chemical bonds in the photoactive component of hybrid glass material to form the expected integrated optic pattern with excellent line width control and vertical sidewalls. To achieve optical wave-guide, a refractive index difference Delta n occurred between the isolated (guiding layer) and the surrounding region (buffer and cladding). Accordingly, the refractive index emerges as a fundamental device performance material parameter and it is investigated using slab wave-guide. (Abstract shortened by UMI.)

Superluminescent light emitting diodes: the best out of two worlds

NASA Astrophysics Data System (ADS)

Rossetti, M.; Napierala, J.; Matuschek, N.; Achatz, U.; Duelk, M.; Vélez, C.; Castiglia, A.; Grandjean, N.; Dorsaz, J.; Feltin, E.

2012-03-01

Since pico-projectors were starting to become the next electronic "must-have" gadget, the experts were discussing which light-source technology seems to be the best for the existing three major projection approaches for the optical scanning module such as digital light processing, liquid crystal on silica and laser beam steering. Both so-far used light source technologies have distinct advantages and disadvantages. Though laser-based pico-projectors are focus-free and deliver a wider color gamut, their major disadvantages are speckle noise, cost and safety issues. In contrast, projectors based on cheaper Light Emitting Diodes (LEDs) as light source are criticized for a lack of brightness and for having limited focus. Superluminescent Light Emitting Diodes (SLEDs) are temporally incoherent and spatially coherent light sources merging in one technology the advantages of both Laser Diodes (LDs) and LEDs. With almost no visible speckle noise, focus-free operation and potentially the same color gamut than LDs, SLEDs could potentially answer the question which light source to use in future projector applications. In this quest for the best light source, we realized visible SLEDs emitting both in the red and blue spectral region. While the technology required for the realization of red emitters is already well established, III-nitride compounds required for blue emission have experienced a major development only in relatively recent times and the technology is still under development. The present paper is a review of the status of development reached for the blue superluminescent diodes based on the GaN material system.

Bulk Group-III Nitride Crystal Growth in Supercritical Ammonia-Sodium Solutions

NASA Astrophysics Data System (ADS)

Griffiths, Steven Herbert

Gallium nitride (GaN) and its alloys with indium nitride (InGaN) and aluminum nitride (AlGaN), collectively referred to as Group-III Nitride semiconductors, have enabled white solid-state lighting (SSL) sources and power electronic devices. While these technologies have already made a lasting, positive impact on society, improvements in design and efficiency are anticipated by shifting from heteroepitaxial growth on foreign substrates (such as sapphire, Si, SiC, etc.) to homoepitaxial growth on native, bulk GaN substrates. Bulk GaN has not supplanted foreign substrate materials due to the extreme conditions required to achieve a stoichiometric GaN melt (temperatures and pressures in excess of 2200°C and 6 GPa, respectively). The only method used to produce bulk GaN on an industrial scale is hydride vapor phase epitaxy (HVPE), but the high cost of gaseous precursors and relatively poor crystal quality have limited the adoption of this technology. A solution growth technique known as the ammonothermal method has attracted interest from academia and industry alike for its ability to produce bulk GaN boules of exceedingly high crystal quality. The ammonothermal method employs supercritical ammonia (NH3) solutions to dissolve, transport, and crystallize GaN. However, ammonothermal growth pressures are still relatively high (˜200 MPa), which has thus far prevented the acquisition of fundamental crystal growth knowledge needed to efficiently (i.e. through data-driven approaches) advance the field. This dissertation focused on addressing the gaps in the literature through two studies employing in situ fluid temperature analysis. The first study focused on identifying the solubility of GaN in supercritical NH3-Na solutions. The design and utilization of in situ and ex situ monitoring equipment enabled the first reports of the two-phase nature of supercritical NH3-Na solutions, and of Ga-alloying of Ni-containing autoclave components. The effects of these error sources on the gravimetric determination of GaN solubility were explored in detail. The second study was aimed at correlating autoclave dissolution and growth zone fluid temperatures with bulk GaN crystal growth kinetics, crystal quality, and impurity incorporation. The insights resulting from this analysis include the identification of the barrier between mass transport and surface integration-limited GaN growth regimes, GaN crystal shape evolution with fluid temperature, the sensitivity of (0001)-orientation crystal quality with fluid temperature, and impurity-specific incorporation activated from the dissolution and growth zones of the autoclave. The results of the aforementioned studies motivated a paradigm-shift in ammonothermal growth. To address this need, a fundamentally different crystal growth approach involving isothermal solutions and tailor-made Group-III alloy source materials was developed/demonstrated. This growth method enabled impurity incorporation reduction compared to traditional ammonothermal GaN growth, and the realization of bulk, ternary Group-III Nitride crystals.

19 CFR 10.177 - Cost or value of materials produced in the beneficiary developing country.

Code of Federal Regulations, 2014 CFR

2014-04-01

...) Wholly the growth, product, or manufacture of the beneficiary developing country; or (2) Substantially... the materials to the manufacturer's plant; (iii) The actual cost of waste or spoilage (material list... expenses incurred in the growth, production, manufacture or assembly of the material, including general...

19 CFR 10.177 - Cost or value of materials produced in the beneficiary developing country.

Code of Federal Regulations, 2013 CFR

2013-04-01

...) Wholly the growth, product, or manufacture of the beneficiary developing country; or (2) Substantially... the materials to the manufacturer's plant; (iii) The actual cost of waste or spoilage (material list... expenses incurred in the growth, production, manufacture or assembly of the material, including general...

19 CFR 10.177 - Cost or value of materials produced in the beneficiary developing country.

Code of Federal Regulations, 2012 CFR

2012-04-01

...) Wholly the growth, product, or manufacture of the beneficiary developing country; or (2) Substantially... the materials to the manufacturer's plant; (iii) The actual cost of waste or spoilage (material list... expenses incurred in the growth, production, manufacture or assembly of the material, including general...

78 FR 7857 - Proposed Agency Information Collection Activities; Comment Request

Federal Register 2010, 2011, 2012, 2013, 2014

2013-02-04

... below have been forwarded to the Office of Management and Budget (OMB) for review and comment. The ICRs... brand identification of the material. (3) Each individual unit of a glazing material that has...) the manufacturer of the material; (iii) the type or brand identification of the material. AAR believes...

49 CFR 178.46 - Specification 3AL seamless aluminum cylinders.

Code of Federal Regulations, 2010 CFR

2010-10-01

... material; or (ii) Obtaining a certified chemical analysis from the material or cylinder manufacturer for each melt, or cast of material; or (iii) Obtaining a certified check analysis on one cylinder out of...) Selecting the samples for check analyses performed by other than the material producer; (ii) Verifying that...

The removal of As(III) and As(V) from aqueous solutions by waste materials.

PubMed

Rahaman, M S; Basu, A; Islam, M R

2008-05-01

The use of different waste materials such as Atlantic Cod fish scale, chicken fat, coconut fibre and charcoal in removing arsenic [As(III) and As(V)] from aqueous solutions was investigated. Initial experimental runs, conducted for both As(III) and As(V) with the aforementioned materials, demonstrated the potential of using Atlantic Cod fish scale in removing both species of arsenic from aqueous streams. Therefore, the biosorbent fish scale was selected for further investigations and various parameters such as residence time, adsorbent dose, initial concentration of adsorbate, grain size of the adsorbent and pH of the bulk phase were studied to establish optimum conditions. The maximum adsorption capacity was observed at pH value 4.0. The equilibrium adsorption data were interpreted by using both Freundlich and Langmuir models. Rapid small-scale column tests (RSSCT) were also performed to determine the breakthrough characteristics of the arsenic species with respect to packed biosorbent columns.

Cecal intubation rates in different eras of endoscopic technological development.

PubMed

Matyja, Maciej; Pasternak, Artur; Szura, Mirosław; Pędziwiatr, Michał; Major, Piotr; Rembiasz, Kazimierz

2018-03-01

Colonoscopy plays a critical role in colorectal cancer (CRC) screening and has been widely regarded as the gold standard. Cecal intubation rate (CIR) is one of the well-defined quality indicators used to assess colonoscopy. To assess the impact of new technologies on the quality of colonoscopy by assessing completion rates. This was a dual-center study at the 2 nd Department of Surgery at Jagiellonian University Medical College and at the Specialist Center "Medicina" in Krakow, Poland. The CIR and cecal intubation time (CIT) in three different eras of technological advancement were determined. The study enrolled 27 463 patients who underwent colonoscopy as part of a national CRC screening program. The patients were divided into three groups: group I - 3408 patients examined between 2000 and 2003 (optical endoscopes); group II - 10 405 patients examined between 2004 and 2008 (standard electronic endoscopes); and group III - 13 650 patients examined between 2009 and 2014 (modern endoscopes). There were statistically significant differences in the CIR between successive eras. The CIR in group I (2000-2003) was 69.75%, in group II (2004-2008) was 92.32%, and in group III (2009-2014) was 95.17%. The mean CIT was significantly reduced in group III. Our study shows that the technological innovation of novel endoscopy devices has a great influence on the effectiveness of the CRC screening program. The new era of endoscopic technological development has the potential to reduce examination-related patient discomfort, obviate the need for sedation and increase diagnostic yields.

2005 NASA Seal/Secondary Air System Workshop, Volume 1

NASA Technical Reports Server (NTRS)

Steinetz, Bruce M. (Editor); Hendricks, Robert C. (Editor)

2006-01-01

The 2005 NASA Seal/Secondary Air System workshop covered the following topics: (i) Overview of NASA s new Exploration Initiative program aimed at exploring the Moon, Mars, and beyond; (ii) Overview of the NASA-sponsored Propulsion 21 Project; (iii) Overview of NASA Glenn s seal project aimed at developing advanced seals for NASA s turbomachinery, space, and reentry vehicle needs; (iv) Reviews of NASA prime contractor, vendor, and university advanced sealing concepts including tip clearance control, test results, experimental facilities, and numerical predictions; and (v) Reviews of material development programs relevant to advanced seals development. Turbine engine studies have shown that reducing high-pressure turbine (HPT) blade tip clearances will reduce fuel burn, lower emissions, retain exhaust gas temperature margin, and increase range. Several organizations presented development efforts aimed at developing faster clearance control systems and associated technology to meet future engine needs. The workshop also covered several programs NASA is funding to develop technologies for the Exploration Initiative and advanced reusable space vehicle technologies. NASA plans on developing an advanced docking and berthing system that would permit any vehicle to dock to any on-orbit station or vehicle. Seal technical challenges (including space environments, temperature variation, and seal-on-seal operation) as well as plans to develop the necessary "androgynous" seal technologies were reviewed. Researchers also reviewed tests completed for the shuttle main landing gear door seals.

Dynamic nuclear polarization of (1)H, (13)C, and (59)Co in a tris(ethylenediamine)cobalt(III) crystalline lattice doped with Cr(III).

PubMed

Corzilius, Björn; Michaelis, Vladimir K; Penzel, Susanne A; Ravera, Enrico; Smith, Albert A; Luchinat, Claudio; Griffin, Robert G

2014-08-20

The study of inorganic crystalline materials by solid-state NMR spectroscopy is often complicated by the low sensitivity of heavy nuclei. However, these materials often contain or can be prepared with paramagnetic dopants without significantly affecting the structure of the crystalline host. Dynamic nuclear polarization (DNP) is generally capable of enhancing NMR signals by transferring the magnetization of unpaired electrons to the nuclei. Therefore, the NMR sensitivity in these paramagnetically doped crystals might be increased by DNP. In this paper we demonstrate the possibility of efficient DNP transfer in polycrystalline samples of [Co(en)3Cl3]2·NaCl·6H2O (en = ethylenediamine, C2H8N2) doped with Cr(III) in varying concentrations between 0.1 and 3 mol %. We demonstrate that (1)H, (13)C, and (59)Co can be polarized by irradiation of Cr(III) with 140 GHz microwaves at a magnetic field of 5 T. We further explain our findings on the basis of electron paramagnetic resonance spectroscopy of the Cr(III) site and analysis of its temperature-dependent zero-field splitting, as well as the dependence of the DNP enhancement factor on the external magnetic field and microwave power. This first demonstration of DNP transfer from one paramagnetic metal ion to its diamagnetic host metal ion will pave the way for future applications of DNP in paramagnetically doped materials or metalloproteins.

Dynamic Nuclear Polarization of 1H, 13C, and 59Co in a Tris(ethylenediamine)cobalt(III) Crystalline Lattice Doped with Cr(III)

PubMed Central

2015-01-01

The study of inorganic crystalline materials by solid-state NMR spectroscopy is often complicated by the low sensitivity of heavy nuclei. However, these materials often contain or can be prepared with paramagnetic dopants without significantly affecting the structure of the crystalline host. Dynamic nuclear polarization (DNP) is generally capable of enhancing NMR signals by transferring the magnetization of unpaired electrons to the nuclei. Therefore, the NMR sensitivity in these paramagnetically doped crystals might be increased by DNP. In this paper we demonstrate the possibility of efficient DNP transfer in polycrystalline samples of [Co(en)3Cl3]2·NaCl·6H2O (en = ethylenediamine, C2H8N2) doped with Cr(III) in varying concentrations between 0.1 and 3 mol %. We demonstrate that 1H, 13C, and 59Co can be polarized by irradiation of Cr(III) with 140 GHz microwaves at a magnetic field of 5 T. We further explain our findings on the basis of electron paramagnetic resonance spectroscopy of the Cr(III) site and analysis of its temperature-dependent zero-field splitting, as well as the dependence of the DNP enhancement factor on the external magnetic field and microwave power. This first demonstration of DNP transfer from one paramagnetic metal ion to its diamagnetic host metal ion will pave the way for future applications of DNP in paramagnetically doped materials or metalloproteins. PMID:25069794

The United Nations programme on space applications: priority thematic areas

NASA Astrophysics Data System (ADS)

Haubold, H.

The Third United Nations Conference on the Exploration and Peaceful Uses of Outer Space (UNISPACE III) was held in 1999 with efforts to identify world wide benefits of developing space science and technology, particularly in the developing nations. One of the main vehicles to implement recommendations of UNISPACE III is the United Nations Programme on Space Applications of the Office for Outer Space Affairs at UN Headquarters in Vienna. Following a process of prioritization by Member States, the Programme focus its activities on (i) knowledge-based themes as space law and basic space science, (ii) application-based themes as disaster management, natural resources management, environmental monitoring, tele-health, and (iii) enabling technologies such as remote sensing satellites, communications satellites, global navigation satellite systems, and small satellites. Current activities of the Programme will be reviewed. Further information available at http://www.oosa.unvienna.org/sapidx.html

The Stratospheric Aerosol and Gas Experiment (SAGE III)

NASA Technical Reports Server (NTRS)

Thomason, Larry W.

1998-01-01

Three SAGE III instruments are being built by Ball Aerospace & Technologies Corporation in Boulder, Colorado (USA). SAGE III is a fourth generation instrument that incorporates robust elements of its predecessors [SAM II, SAGE, SAGE II] while incorporating new design elements. The first of these will be launched aboard a Russian Meteor/3M platform in May 1999. SAGE III will add measurements of O2-A band from which density and temperature profiles are retrieved. This feature should improve refraction and Rayleigh computations over earlier. Additionally, the linear array of detectors will permit on-orbit wavelength calibration from observations of the exo-atmospheric solar Fraunhofer spectrum.

The rise of 3-d single-ion magnets in molecular magnetism: towards materials from molecules?

PubMed Central

Frost, Jamie M.; Harriman, Katie L. M.

2016-01-01

Single-molecule magnets (SMMs) that contain one spin centre (so-called single-ion magnets) theoretically represent the smallest possible unit for spin-based electronic devices. The realisation of this and related technologies, depends on first being able to design systems with sufficiently large energy barriers to magnetisation reversal, U eff, and secondly, on being able to organise these molecules into addressable arrays. In recent years, significant progress has been made towards the former goal – principally as a result of efforts which have been directed towards studying complexes based on highly anisotropic lanthanide ions, such as Tb(iii) and Dy(iii). Since 2013 however, and the remarkable report by Long and co-workers of a linear Fe(i) system exhibiting U eff = 325 K, single-ion systems of transition metals have undergone something of a renaissance in the literature. Not only do they have important lessons to teach us about anisotropy and relaxation dynamics in the quest to enhance U eff, the ability to create strongly coupled spin systems potentially offers access to a whole of host of 1, 2 and 3-dimensional materials with interesting structural and physical properties. This perspective summarises recent progress in this rapidly expanding sub-genre of molecular magnetism from the viewpoint of the synthetic chemist, with a particular focus on the lessons that have so far been learned from single-ion magnets of the d-block, and, the future research directions which we feel are likely to emerge in the coming years. PMID:28660017

Technological state of the art of SiC

NASA Astrophysics Data System (ADS)

Tyc, Stdphane

1993-10-01

In a recent paper [1], Locatelli and Gamal describe the technological state of the art of SiC compared with Si. I would like to bear witness to the rapid advancement of SiC technology by giving a slighty updated account of SiC technology. The boule growth of SiC now achieves diameters up to 60 mm. One of the most problematic standing issues is the presence of micropipes in the wafers with a density of the order of 100 cm^{-2} or more [2]. The doping range available in epilayers is now wider. CAFE Research [3] accepts orders for doping densities from 5 × 10^{15} cm^{-3} to 1 × 10^{19} cm^{-3} in both N and P type. However their state of the art is better (we have received P type with doping 4 × 10^{14} cm^{-3} and N type with doping over 2 × 10^{19} cm^{-3} and they have also delivered [4] N type doping of 5 × 10^{14} cm^{-3}). As for large P dopings, Dmitriev has published [5] dopings over 10^{20} cm^{-3} The specific resistance of contacts on N type layers has also rapidly improved. Kelner has published results of 3 × 10^{-6} Ohm.cm2 with Ni contacts [6]. We have obtained with molybdenum [7] specific resistances of 2 × 10^{-5} Ohm.cm2 on epitaxies doped to 5 × 10^{18} cm^{-3} This value should be rapidly lowered as higher doped layers are used. In sum, I do agree with the authors of [1] that the technology of 6H SiC is rapidly advancing, thanks to breakthroughs in material growth and to a wide ranging renewed interest in this material. The pace may actually be higher than hitherto realized. References: [1] Locatelli and Gamal, J. Phys. III France 3 (1993) 1101. [2] Barret D. L. et al., Tenth Int. Conf. on Crystal Growth, San Diego, CA, USA 16-21 (August 1992). [3] CREE Research Inc., 2810 Meridian Parkway, Durham, NC 27713, USA. [4] Parrish M., private communication. [5] Dmitriev et al., Ext. Abstracts of the Electrochemical Soc. Meeting, 4, 89-2 (1989) 711. [6] Workshop on SiC Material and Devices (Charlottesville, September 10-11 1992) VA 22901. [7] Tyc et a1., accepted at the ICSCRM (Washington DC, November 93).

Polyfunctional inorganic-organic hybrid materials: an unusual kind of NLO active layered mixed metal oxalates with tunable magnetic properties and very large second harmonic generation.

PubMed

Cariati, Elena; Macchi, Roberto; Roberto, Dominique; Ugo, Renato; Galli, Simona; Casati, Nicola; Macchi, Piero; Sironi, Angelo; Bogani, Lapo; Caneschi, Andrea; Gatteschi, Dante

2007-08-01

Mixed M(II)/M(III) metal oxalates, as "stripes" connected through strong hydrogen bonding by para-dimethylaminobenzaldeide (DAMBA) and water, form an organic-inorganic 2D network that enables segregation in layers of the cationic organic NLO-phore trans-4-(4-dimethylaminostyryl)-1-methylpyridinium, [DAMS+]. The crystalline hybrid materials obtained have the general formula [DAMS]4[M2M'(C2O4)6].2DAMBA.2H2O (M = Rh, Fe, Cr; M' = Mn, Zn), and their overall three-dimensional packing is non-centrosymmetric and polar, therefore suitable for second harmonic generation (SHG). All the compounds investigated are characterized by an exceptional SHG activity, due both to the large molecular quadratic hyperpolarizability of [DAMS+] and to the efficiency of the crystalline network which organizes [DAMS+] into head-to-tail arranged J-type aggregates. The tunability of the pairs of metal ions allows exploiting also the magnetic functionality of the materials. Examples containing antiferro-, ferro-, and ferri-magnetic interactions (mediated by oxalato bridges) are obtained by coupling proper M(III) ions (Fe, Cr, Rh) with M(II) (Mn, Zn). This shed light on the role of weak next-nearest-neighbor interactions and main nearest-neighbor couplings along "stripes" of mixed M(II)/M(III) metal oxalates of the organic-inorganic 2D network, thus suggesting that these hybrid materials may display isotropic 1D magnetic properties along the mixed M(II)/M(III) metal oxalates "stripes".

10 CFR Appendix E to Part 73 - Levels of Physical Protection To Be Applied in International Transport of Nuclear Material 1

Code of Federal Regulations, 2010 CFR

2010-01-01

... material are synonymous: Category I is a formula quantity of strategic special nuclear material; Category II is special nuclear material of moderate strategic significance or irradiated fuel; and Category III is special nuclear material of low strategic significance. (Verbatim from Annex I to the...

NASA EEE Parts and Advanced Interconnect Program (AIP)

NASA Technical Reports Server (NTRS)

Gindorf, T.; Garrison, A.

1996-01-01

none given From Program Objectives: I. Accelerate the readiness of new technologies through development of validation, assessment and test method/tools II. Provide NASA Projects infusion paths for emerging technologies III. Provide NASA Projects technology selection, application and validation guidelines for harware and processes IV. Disseminate quality assurance, reliability, validation, tools and availability information to the NASA community.

Landau quantization in monolayer GaAs

NASA Astrophysics Data System (ADS)

Chung, Hsien-Ching; Ho, Ching-Hong; Chang, Cheng-Peng; Chen, Chun-Nan; Chiu, Chih-Wei; Lin, Ming-Fa

In the past decade, the discovery of graphene has opened the possibility of two-dimensional materials both in fundamental researches and technological applications. However, the gapless feature shrinks the applications of pristine graphene. Recently, researchers have new challenges and opportunities for post-graphene two-dimensional nanomaterials, such as silicene (Si), germanene (Ge), and tinene (Sn), due to the large enough energy gap (of the size comparable to the thermal energy at room temperature). Apart from the graphene analogs of group IV elements, the buckled honeycomb lattices of the binary compositions of group III-V elements have been proposed as a new class of post-graphene two-dimensional nanomaterials. In this study, the generalized tight-binding model considering the spin-orbital coupling is used to investigate the essential properties of monolayer GaAs. The Landau quantization, band structure, wave function, and density of states are discussed in detail. One of us (Hsien-Ching Chung) thanks Ming-Hui Chung and Su-Ming Chen for financial support. This work was supported in part by the Ministry of Science and Technology of Taiwan under Grant Number MOST 105-2811-M-017-003.

Laboratory investigations of the effects of nitrification-induced acidification on Cr cycling in vadose zone material partially derived from ultramafic rocks

USGS Publications Warehouse

Mills, Christopher T.; Goldhaber, Martin B.

2012-01-01

Sacramento Valley (California, USA) soils and sediments have high concentrations of Cr(III) because they are partially derived from ultramafic material. Some Cr(III) is oxidized to more toxic and mobile Cr(VI) by soil Mn oxides. Valley soils typically have neutral to alkaline pH at which Cr(III) is highly immobile. Much of the valley is under cultivation and is both fertilized and irrigated. A series of laboratory incubation experiments were conducted to assess how cultivation might impact Cr cycling in shallow vadose zone material from the valley. The first experiments employed low (7.1 mmol N per kg soil) and high (35 mmol N kg− 1) concentrations of applied (NH4)2SO4. Initially, Cr(VI) concentrations were up to 45 and 60% greater than controls in low and high incubations, respectively. After microbially-mediated oxidation of all NH4+, Cr(VI) concentrations dropped below control values. Increased nitrifying bacterial populations (estimated by measurement of phospholipid fatty acids) may have increased the Cr(VI) reduction capacity of the vadose zone material resulting in the observed decreases in Cr(VI). Another series of incubations employed vadose zone material from a different location to which low (45 meq kg− 1) and high (128 meq kg− 1) amounts of NH4Cl, KCl, and CaCl2 were applied. All treatments, except high concentration KCl, resulted in mean soil Cr(VI) concentrations that were greater than the control. High concentrations of water-leachable Ba2 + (mean 38 μmol kg− 1) in this treatment may have limited Cr(VI) solubility. A final set of incubations were amended with low (7.1 mmol N kg− 1) and high (35 mmol N kg− 1) concentrations of commercial liquid ammonium polyphosphate (APP) fertilizer which contained high concentrations of Cr(III). Soil Cr(VI) in the low APP incubations increased to a concentration of 1.8 μmol kg− 1 (5 × control) over 109 days suggesting that Cr(III) added with the APP fertilizer was more reactive than naturally-occurring soil Cr(III).

77 FR 51518 - Alternative Personnel Management System (APMS) at the National Institute of Standards and Technology

Federal Register 2010, 2011, 2012, 2013, 2014

2012-08-24

... for all positions within the Scientific and Engineering (ZP) career path at the Pay Band III and above, for Nuclear Reactor Operator positions in the Scientific and Engineering Technician (ZT) career path... and Engineering Technician (ZT) career path at the Pay Band III and above, and for all positions in...

21st Century Accountability: Perkins III and WIA. Information Paper 1002.

ERIC Educational Resources Information Center

Stevens, David W.

The passage of the Carl D. Perkins Vocational and Applied Technology Education Amendments of 1998 (Perkins III) and the Workforce Investment Act of 1998 (WIA) marked a new era in the performance accountability partnership among the states, the U.S. Department of Education, and the U.S. Department of Labor (DOL). Evaluation of vocational education…

Statistical comparisons of AGDISP prediction with Mission III data

Treesearch

Baozhong Duan; Karl Mierzejewski; William G. Yendol

1991-01-01

Statistical comparison of AGDISP prediction were made against data obtained during aerial spray field trials ("Mission III") conducted in March 1987 at the APHIS Facility, Moore Air Base, Edinburg, Texas, by the NEFAAT group (Northeast Forest Aerial Application Technology). Seven out of twenty one runs were observed and predicted means (O and P), mean bias...

Failure Mechanisms for III-Nitride HEMT Devices

DTIC Science & Technology

2013-11-19

rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates, J. Cryst. Growth 380, 14-17 (2013). ii) Conference presentations (Invited...1 eFinal Report – AOARD Grant FA-2386-11-1-4107 Failure Mechanisms for III-nitride HEMT devices 19 November 2013 Principal Investigators: Martha...aspects of III-nitride HEMT materials and devices. Energy-filtered imaging of unstressed and stressed Ni/Au-gated AlGaN/GaN HEMTs indicated that

Room-temperature ballistic transport in III-nitride heterostructures.

PubMed

Matioli, Elison; Palacios, Tomás

2015-02-11

Room-temperature (RT) ballistic transport of electrons is experimentally observed and theoretically investigated in III-nitrides. This has been largely investigated at low temperatures in low band gap III-V materials due to their high electron mobilities. However, their application to RT ballistic devices is limited by their low optical phonon energies, close to KT at 300 K. In addition, the short electron mean-free-path at RT requires nanoscale devices for which surface effects are a limitation in these materials. We explore the unique properties of wide band-gap III-nitride semiconductors to demonstrate RT ballistic devices. A theoretical model is proposed to corroborate experimentally their optical phonon energy of 92 meV, which is ∼4× larger than in other III-V semiconductors. This allows RT ballistic devices operating at larger voltages and currents. An additional model is described to determine experimentally a characteristic dimension for ballistic transport of 188 nm. Another remarkable property is their short carrier depletion at device sidewalls, down to 13 nm, which allows top-down nanofabrication of very narrow ballistic devices. These results open a wealth of new systems and basic transport studies possible at RT.

Investigations into the synthesis and fluorescence properties of Eu(III), Tb(III), Sm(III) and Gd(III) complexes of a novel bis- β-diketone-type ligand

NASA Astrophysics Data System (ADS)

Luo, Yi-Ming; Chen, Zhe; Tang, Rui-Ren; Xiao, Lin-Xiang; Peng, Hong-Jian

2008-02-01

A novel bis- β-diketon ligand, 1,1'-(2,6-bispyridyl)bis-3-phenyl-1,3-propane-dione (L), was designed and synthesized and its complexes with Eu(III), Tb(III), Sm(III) and Gd(III) ions were successfully prepared. The ligand and the corresponding metal complexes were characterized by elemental analysis, and infrared, mass and proton nuclear magnetic resonance spectroscopy. Analysis of the IR spectra suggested that each of the lanthanide metal ions coordinated to the ligand via the carbonyl oxygen atoms and the nitrogen atom of the pyridine ring. The fluorescence properties of these complexes in solid state were investigated and it was discovered that all of the lanthanide ions could be sensitized by the ligand (L) to some extent. In particular, the Tb(III) complex was an excellent green-emitter and would be a potential candidate material for applications in organic light-emitting devices (OLEDs) and medical diagnosis.

Integrated Passive Biological Treatment System/ Mine Waste Technology Program Report #16

EPA Science Inventory

This report summarizes the results of the Mine Waste Technology Program (MWTP) Activity III, Project 16, Integrated, Passive Biological Treatment System, funded by the United States Environmental Protection Agency (EPA) and jointly administered by EPA and the United States Depar...

IRON-PEROXYMONOSULFATE: A NOVEL SULFATE RADICAL BASED ADVANCED OXIDATION TECHNOLOGY FOR DEGRADATION OF PCBS

EPA Science Inventory

This study investigates the degradation of recalcitrant polychlorinated biphenyl (PCBs) using sulfate radical-based advanced oxidation technologies. Sulfate radicals are generated through coupling of peroxymonosulfate (PMS) with iron (Fe(II), Fe(III)). Sulfate radicals have very ...

CHAP III- CHARRING ABLATOR PROGRAM FOR ADVANCED INVESTIGATION OF THERMAL PROTECTION SYSTEMS FOR ENTRY

NASA Technical Reports Server (NTRS)

Stroud, C. W.

1994-01-01

The transient response of a thermal protection material to heat applied to the surface can be calculated using the CHAP III computer program. CHAP III can be used to analyze pyrolysis gas chemical kinetics in detail and examine pyrolysis reactions-indepth. The analysis includes the deposition of solid products produced by chemical reactions in the gas phase. CHAP III uses a modelling technique which can approximate a wide range of ablation problems. The energy equation used in CHAP III incorporates pyrolysis (both solid and gas reactions), convection, conduction, storage, work, kinetic energy, and viscous dissipation. The chemically reacting components of the solid are allowed to vary as a function of position and time. CHAP III employs a finite difference method to approximate the energy equations. Input values include specific heat, thermal conductivity, thermocouple locations, enthalpy, heating rates, and a description of the chemical reactions expected. The output tabulates the temperature at locations throughout the ablator, gas flow within the solid, density of the solid, weight of pyrolysis gases, and rate of carbon deposition. A sample case is included, which analyzes an ablator material containing several pyrolysis reactions subjected to an environment typical of entry at lunar return velocity. CHAP III is written in FORTRAN IV for batch execution and has been implemented on a CDC CYBER 170 series computer operating under NOS with a central memory requirement of approximately 102K (octal) of 60 bit words. This program was developed in 1985.

Implementation of Strategies to Improve the Reliability of III-Nitride Photodetectors towards the Realization of Visible and Solar-Blind Imaging Arrays

NASA Astrophysics Data System (ADS)

Bulmer, John J.

Ultraviolet (UV) radiation detectors are being heavily researched for applications in non-line-of-sight (NLOS) communication systems, flame monitoring, biological detection, and astronomical studies. These applications are currently being met by the use of Si-based photomultiplier tubes (PMTs), which are bulky, fragile, expensive and require the use of external filters to achieve true visible-blind and solar-blind operation. GaN and AlxGa1-xN avalanche photodiodes have been of great interest as a replacement for PMT technology. III-Nitride materials are radiation hard and have a wide, tunable bandgap that allows devices to operate in both visible and solar-blind regimes without the use of external filters. The high price and relative unavailability of bulk substrates demands heteroepitaxy of III-Nitride films on lattice-mismatched substrates, which leads to large dark current and premature breakdown in GaN and AlGaN avalanche photodiodes. While significant advances have been made towards the development of III-Nitride UV photodetectors using a variety of device designs, GaN-based avalanche photodiodes typically demonstrate poor device performance, low yield, and breakdown that results in permanent device damage. To address these challenges, a novel implantation technique was used to achieve edge termination and electric field redistribution at the contact edges in GaN and AlGaN p-i-n photodiode structures to enhance reliability. This process was successful at significantly reducing the levels of dark current over two orders of magnitude and resulted in improved device reliability. Further improvement in reliability of III-Nitride devices was also proposed and explored by a technique for isolation of electrically conductive structural defects. The large number of dislocations induced by the lattice and thermal mismatch with the substrate are known to be leakage current pathways and non-radiative recombination centers in III-Nitride films. This process selectively isolates conductive pathways in III-Nitrides using an electrochemical etch and novel foam passivation technique. Establishing improved photodiode performance and device reliability, 4x4 and 8x8 arrays of GaN p-i-n photodiodes were demonstrated and integrated with external circuitry to generate image patterns using 360nm illumination. This work represents significant progress towards the realization of reliable III-Nitride UV detectors arrays and future directions are proposed in order to demonstrate large-scale arrays for high-resolution ultraviolet imaging.

Influence of bone morphogenetic protein and proportion of hydroxyapatite on new bone formation in biphasic calcium phosphate graft: two pilot studies in animal bony defect model.

PubMed

Yun, Pil-Young; Kim, Young-Kyun; Jeong, Kyung-In; Park, Ju-Cheol; Choi, Yeon-Jo

2014-12-01

The purpose of these two pilot studies using animal bony defect models was to evaluate the influence of bone morphogenetic protein (BMP) and proportion of hydroxyapatite (HA)/beta-tricalcium phosphate (β-TCP) in biphasic calcium phosphate (BCP) graft on new bone formation. In this study, four kinds of synthetic osteoconductive bone materials known for bone growth scaffold, OSTEON™II(HA:β-TCP 30:70), OSTEON™III (HA:β-TCP 20:80), OSTEON™II Collagen, and OSTEON™III Collagen, were prepared as BCP graft materials. In pilot study 1, three BCP materials (OSTEON™II, OSTEON™III, and OSTEON™II Collagen) were grafted in rabbit calvarial defects after impregnating in rhBMP-2. OSTEON™II without the rhBMP-2 impregnation was included in the study as the control. The amount of new bone was examined and measured histologically at 2, 4, and 8 weeks. In pilot study 2, four BCP materials (OSTEON™II, OSTEON™III, OSTEON™II Collagen, and OSTEON™III Collagen) were grafted in beagle dog mandibular defects after soaking in the rhBMP-2. The amount of total bone and new bone were measured three-dimensionally using microCT and healing process was examined histologically at 2, 4, and 8 weeks. In pilot study 1, rhBMP-2 impregnated groups showed more new bone formation than the rhBMP-2 free group. In pilot study 2, increased new bone formation was observed in time-dependent manner after graft of BCP and BCP-collagen (OSTEON™II, OSTEON™III, OSTEON™II Collagen, and OSTEON™III Collagen) impregnated with rhBMP-2. Also, BCP with a higher proportion of HA (30% HA) showed more favorable result in new bone formation and space maintenance, especially at the 8 weeks. From the results of the pilot studies, rhBMP-2 played positive roles in new bone formation and BCP could become a scaffold candidate for rhBMP-2 impregnation to induce new bone formation. Moreover, BCP with a higher proportion of HA (30% HA) could be considered more appropriate for rhBMP-2 carrier. Copyright © 2014 European Association for Cranio-Maxillo-Facial Surgery. Published by Elsevier Ltd. All rights reserved.

CMOS Imaging Sensor Technology for Aerial Mapping Cameras

NASA Astrophysics Data System (ADS)

Neumann, Klaus; Welzenbach, Martin; Timm, Martin

2016-06-01

In June 2015 Leica Geosystems launched the first large format aerial mapping camera using CMOS sensor technology, the Leica DMC III. This paper describes the motivation to change from CCD sensor technology to CMOS for the development of this new aerial mapping camera. In 2002 the DMC first generation was developed by Z/I Imaging. It was the first large format digital frame sensor designed for mapping applications. In 2009 Z/I Imaging designed the DMC II which was the first digital aerial mapping camera using a single ultra large CCD sensor to avoid stitching of smaller CCDs. The DMC III is now the third generation of large format frame sensor developed by Z/I Imaging and Leica Geosystems for the DMC camera family. It is an evolution of the DMC II using the same system design with one large monolithic PAN sensor and four multi spectral camera heads for R,G, B and NIR. For the first time a 391 Megapixel large CMOS sensor had been used as PAN chromatic sensor, which is an industry record. Along with CMOS technology goes a range of technical benefits. The dynamic range of the CMOS sensor is approx. twice the range of a comparable CCD sensor and the signal to noise ratio is significantly better than with CCDs. Finally results from the first DMC III customer installations and test flights will be presented and compared with other CCD based aerial sensors.

Inkjet Printing of Drug-Loaded Mesoporous Silica Nanoparticles-A Platform for Drug Development.

PubMed

Wickström, Henrika; Hilgert, Ellen; Nyman, Johan O; Desai, Diti; Şen Karaman, Didem; de Beer, Thomas; Sandler, Niklas; Rosenholm, Jessica M

2017-11-21

Mesoporous silica nanoparticles (MSNs) have shown great potential in improving drug delivery of poorly water soluble (BCS class II, IV) and poorly permeable (BCS class III, IV) drugs, as well as facilitating successful delivery of unstable compounds. The nanoparticle technology would allow improved treatment by reducing adverse reactions of currently approved drugs and possibly reintroducing previously discarded compounds from the drug development pipeline. This study aims to highlight important aspects in mesoporous silica nanoparticle (MSN) ink formulation development for digital inkjet printing technology and to advice on choosing a method (2D/3D) for nanoparticle print deposit characterization. The results show that both unfunctionalized and polyethyeleneimine (PEI) surface functionalized MSNs, as well as drug-free and drug-loaded MSN-PEI suspensions, can be successfully inkjet-printed. Furthermore, the model BCS class IV drug remained incorporated in the MSNs and the suspension remained physically stable during the processing time and steps. This proof-of-concept study suggests that inkjet printing technology would be a flexible deposition method of pharmaceutical MSN suspensions to generate patterns according to predefined designs. The concept could be utilized as a versatile drug screening platform in the future due to the possibility of accurately depositing controlled volumes of MSN suspensions on various materials.

US-UK Collaboration on Fossil Energy Advanced Materials: Task 1—Steam Oxidation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Holcomb, Gordon R.; Tylczak, Joseph; Carney, Casey

This presentation goes over the following from the US-UK collaboration on Fossil Energy Advanced Materials: Task 1, Steam Oxidation: US-led or co-led deliverables, Phase II products (US), 2011-present, Phase III products, Phase III Plan, an explanation of sCO 2 compared with sH 2O, an explanation of Ni-base Alloys, an explanation of 300 Series (18Cr-8Ni)/E-Brite, an explanation of the typical Microchannel HX Fabrication process, and an explanation of diffusion bonded Ni-base superalloys.

Synthesis of refractory materials

DOEpatents

Holt, Joseph B.

1984-01-01

Refractory metal nitrides are synthesized during a self-propagating combustion process utilizing a solid source of nitrogren. For this purpose, a metal azide is employed, preferably NaN.sub.3. The azide is combusted with Mg or Ca, and a metal oxide is selected from Groups III-A, IV-A, III-B, IV-B, or a rare earth metal oxide. The mixture of azide, Ca or Mg and metal oxide is heated to the mixture's ignition temperature. At that temperature the mixture is ignited and undergoes self-sustaining combustion until the starter materials are exhausted, producing the metal nitride.

Synthesis of refractory materials

DOEpatents

Holt, J.B.

1983-08-16

Refractory metal nitrides are synthesized during a self-propagating combustion process utilizing a solid source of nitrogen. For this purpose, a metal azide is employed, preferably NaN/sub 3/. The azide is combusted with Mg or Ca, and a metal oxide is selected from Groups III-A, IV-A, III-B, IV-B, or a rare earth metal oxide. The mixture of azide, Ca or Mg and metal oxide is heated to the mixture's ignition temperature. At that temperature the mixture is ignited and undergoes self-sustaining combustion until the starter materials are exhausted, producing the metal nitride.

40 CFR 63.1105 - Transfer racks.

Code of Federal Regulations, 2014 CFR

2014-07-01

... manner as a material that fulfills the same function in that process; (ii) Transformed by chemical reaction into materials that are not HAP; (iii) Incorporated into a product; and/or (iv) Recovered. (4...

40 CFR 63.1105 - Transfer racks.

Code of Federal Regulations, 2011 CFR

2011-07-01

... manner as a material that fulfills the same function in that process; (ii) Transformed by chemical reaction into materials that are not HAP; (iii) Incorporated into a product; and/or (iv) Recovered. (4...

40 CFR 63.1105 - Transfer racks.

Code of Federal Regulations, 2012 CFR

2012-07-01

... manner as a material that fulfills the same function in that process; (ii) Transformed by chemical reaction into materials that are not HAP; (iii) Incorporated into a product; and/or (iv) Recovered. (4...

40 CFR 63.1105 - Transfer racks.

Code of Federal Regulations, 2013 CFR

2013-07-01

... manner as a material that fulfills the same function in that process; (ii) Transformed by chemical reaction into materials that are not HAP; (iii) Incorporated into a product; and/or (iv) Recovered. (4...

InAs/GaInSb superlattices as a promising material system for third generation infrared detectors

NASA Astrophysics Data System (ADS)

Rogalski, A.; Martyniuk, P.

2006-04-01

Hitherto, two families of multielement detectors have been used for infrared applications: scanning systems (first generation) and staring systems (second generation). Third generation systems are being developed nowadays. In the common understanding, third generation IR systems provide enhanced capabilities like larger number of pixels, higher frame rates, better thermal resolution as well as multicolour functionality and other on-chip functions. In the class of third generation infrared photon detectors, two main competitors, HgCdTe photodiodes and AlGaAs/GaAs quantum well infrared photoconductors (QWIPs) are considered. However, in the long wavelength infrared (LWIR) region, the HgCdTe material fail to give the requirements of large format two-dimensional (2-D) arrays due to metallurgical problems of the epitaxial layers such as uniformity and number of defective elements. A superlattice based InAs/GaInSb system grown on GaSb substrate seems to be an attractive alternative to HgCdTe with good spatial uniformity and an ability to span cut-off wavelength from 3 to 25 μm. The recently published results have indicated that high performance middle wavelength infrared (MWIR) InAs/GaInSb superlattice focal plane arrays can be fabricated. Also LWIR photodiodes with the R0A values exceeding 100 Ωcm 2 even with a cut-off wavelength of 14 μm can be achieved. Based on these very promising results it is obvious now that the antimonide superlattice technology is competing with HgCdTe dual colour technology with the potential advantage of standard III-V technology to be more competitive in costs and as a consequence series production pricing.

Advances in thin-film solar cells for lightweight space photovoltaic power

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.; Bailey, Sheila G.; Flood, Dennis J.

1989-01-01

The present stature and current research directions of photovoltaic arrays as primary power systems for space are reviewed. There have recently been great advances in the technology of thin-film solar cells for terrestrial applications. In a thin-film solar cell the thickness of the active element is only a few microns; transfer of this technology to space arrays could result in ultralow-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper-indium selenide (CuInSe2) and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon:hydrogen and alloys. The best experimental efficiency on thin-film solar cells to date is 12 percent AMO for CuIn Se2. This efficiency is likely to be increased in the next few years. The radiation tolerance of thin-film materials is far greater than that of single-crystal materials. CuIn Se2 shows no degradation when exposed to 1 MeV electrons. Experimental evidence also suggests that most of all of the radiation damage on thin-films can be removed by a low temperature anneal. The possibility of thin-film multibandgap cascade solar cells is discussed, including the tradeoffs between monolithic and mechanically stacked cells. The best current efficiency for a cascade is 12.5 percent AMO for an amorphous silicon on CuInSe2 multibandgap combination. Higher efficiencies are expected in the future. For several missions, including solar-electric propulsion, a manned Mars mission, and lunar exploration and manufacturing, thin-film photovolatic arrays may be a mission-enabling technology.

25th anniversary article: semiconductor nanowires--synthesis, characterization, and applications.

PubMed

Dasgupta, Neil P; Sun, Jianwei; Liu, Chong; Brittman, Sarah; Andrews, Sean C; Lim, Jongwoo; Gao, Hanwei; Yan, Ruoxue; Yang, Peidong

2014-04-09

Semiconductor nanowires (NWs) have been studied extensively for over two decades for their novel electronic, photonic, thermal, electrochemical and mechanical properties. This comprehensive review article summarizes major advances in the synthesis, characterization, and application of these materials in the past decade. Developments in the understanding of the fundamental principles of "bottom-up" growth mechanisms are presented, with an emphasis on rational control of the morphology, stoichiometry, and crystal structure of the materials. This is followed by a discussion of the application of nanowires in i) electronic, ii) sensor, iii) photonic, iv) thermoelectric, v) photovoltaic, vi) photoelectrochemical, vii) battery, viii) mechanical, and ix) biological applications. Throughout the discussion, a detailed explanation of the unique properties associated with the one-dimensional nanowire geometry will be presented, and the benefits of these properties for the various applications will be highlighted. The review concludes with a brief perspective on future research directions, and remaining barriers which must be overcome for the successful commercial application of these technologies. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Teach Astronomy: An Online Resource for General Education and Informal Learning

NASA Astrophysics Data System (ADS)

Hardegree-Ullman, Kevin; Impey, C.; Patikkal, A.; Srinathan, A.; Collaboration of Astronomy Teaching Scholars CATS

2012-01-01

Teach Astronomy is a website developed for students and informal learners who would like to learn more general astronomy knowledge. This learning tool aggregates content from a myriad of sources, including: an introductory astronomy text book by C. D. Impey and W. K. Hartmann, astronomy related articles on Wikipedia, images from the Astronomy Picture of the Day, two to three minute video clips by C. D. Impey, podcasts from 365 Days of Astronomy, and news from Science Daily. In addition, Teach Astronomy utilizes a novel technology to cluster and display search results called a Wikimap. We present an overview of the website's features and suggestions for making the best use of Teach Astronomy in the classroom or at home. This material is based in part upon work supported by the National Science Foundation under Grant No. 0715517, a CCLI Phase III Grant for the Collaboration of Astronomy Teaching Scholars (CATS). Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the National Science Foundation.

InAs/InGaSb Type-II strained layer superlattice IR detectors

NASA Astrophysics Data System (ADS)

Nathan, Vaidya; Anselm, K. Alex; Lin, C. H. T.; Johnson, Jeffrey L.

2002-05-01

InAs/InGaSb type2 strained layer superlattice (SLS) combines the advantages of III-V materials technology with the strong, broad-band absorption, and wavelength tunability of HgCdTe. In fact, the significantly reduced tunneling and Auger recombination rates in SLS compared to those in HgCdTe should enable SLS detectors to outperform HgCdTe. We report the results of our investigation of InAs/InGaSb type2 strained layer superlattices (SLS)for LWIR photovoltaic detector development. We modeled the band structure, and absorption spectrum of SLS's, and achieved good agreement with experimental data. We systematically investigated the SLS growth conditions, resulting in good uniformity, and the elimination of several defects. We designed, developed and evaluated 16x16 array of 13 micron cutoff photovoltaic detectors. Photodiodes with cutoff wavelengths of 13 and 18microns were demonstrated, which are the longest wavelengths demonstrated for this material system. Quantum efficiencies commensurate with the superlattice thickness were demonstrated and verified at AFRL. The electrical properties show excessive leakage current, most likely due to trap-assisted tunneling.

Reduction and removal of Cr(VI) from aqueous solutions using modified byproducts of beer production.

PubMed

Cui, Haojie; Fu, Minglai; Yu, Shen; Wang, Ming Kuang

2011-02-28

Biosorption, as an effective and low-cost technology treating industrial wastewaters containing Cr(VI), has become a significant concern worldwide. In this work, acid-modified byproducts of beer production (BBP) were used to remove Cr(VI) from aqueous solutions. Removal of Cr(VI) increases as the pH is decreased from 4.0 to 1.5, but the maximum of total Cr removal is obtained in a pH range from 2.0 to 2.5. Nearly 60% of the initial Cr(VI) (100 mg L(-1)) was adsorbed or reduced to Cr(III) within the first 10 min at pH 2.0. The Cr(VI) removal capability of acid-modified BBP materials was almost completely retained after regenerating with acid. FT-IR and XPS spectra revealed that carboxylate and carboxyl groups on the surface of modified BBP materials play a major role in Cr(VI) binding and reduction, whereas amide and other groups play a minor role in the Cr(VI) removal process. Copyright © 2010 Elsevier B.V. All rights reserved.

Arsenic removal by iron oxide coated sponge: treatment and waste management.

PubMed

Nguyen, Tien Vinh; Rahman, Abdur; Vigneswaran, Saravanamuthu; Ngo, Huu Hao; Kandasamy, Jaya; Nguyen, Duc Tho; Do, Tuan Anh; Nguyen, Trung Kien

2009-01-01

One of the problems in drinking water that raises concern over the world is that millions of people still have to use arsenic-contaminated water. There is a worldwide need to develop appropriate technologies to remove arsenic from water for household and community water supply systems. In this study, a new material namely iron oxide coated sponge (IOCSp) was developed and used to remove arsenic (As) from contaminated groundwater in Vietnam. The results indicated that IOCSp has a high capacity in removing both As (V) and As (III). The adsorption capacity of IOCSp was up to 4.6 mg As/g IOCSp, showing better than many other materials. It was observed from a pilot study that a small quantity of IOCSp (180 g) could reduce As concentration of 480 microg/L in 1.5 m3 of contaminated natural water to below 40 microg/L. In addition, an exhausted IOCSp, containing a large amount of arsenic (up to 0.42 wt %) could safely be disposed through the solidification/stabilization with cement. Addition of fly ash also reduced the amount of arsenic in the leachate.

Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure.

PubMed

Niu, Gang; Capellini, Giovanni; Hatami, Fariba; Di Bartolomeo, Antonio; Niermann, Tore; Hussein, Emad Hameed; Schubert, Markus Andreas; Krause, Hans-Michael; Zaumseil, Peter; Skibitzki, Oliver; Lupina, Grzegorz; Masselink, William Ted; Lehmann, Michael; Xie, Ya-Hong; Schroeder, Thomas

2016-10-12

The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. InP could open new avenues for the realization of novel devices such as high-mobility transistors in next-generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (∼8%), thermal expansion mismatch (∼84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a SiO 2 matrix. A graphene/InP/Si-tip heterostructure was realized on obtained materials, revealing rectifying behavior and promising photodetection. This work presents a significant advance toward the monolithic integration of graphene/III-V based hybrid devices onto the mainstream Si technology platform.

The role of technology in reducing health care costs. Phase II and phase III.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cilke, John F.; Parks, Raymond C.; Funkhouser, Donald Ray

2004-04-01

In Phase I of this project, reported in SAND97-1922, Sandia National Laboratories applied a systems approach to identifying innovative biomedical technologies with the potential to reduce U.S. health care delivery costs while maintaining care quality. The effort provided roadmaps for the development and integration of technology to meet perceived care delivery requirements and an economic analysis model for development of care pathway costs for two conditions: coronary artery disease (CAD) and benign prostatic hypertrophy (BPH). Phases II and III of this project, which are presented in this report, were directed at detailing the parameters of telemedicine that influence care deliverymore » costs and quality. These results were used to identify and field test the communication, interoperability, and security capabilities needed for cost-effective, secure, and reliable health care via telemedicine.« less

UAVSAR: Airborne L-Band Radar for Repeat Pass Interferometry

NASA Technical Reports Server (NTRS)

Moes, Tim

2011-01-01

The Costa Rican National Center for Advanced Technology (CeNAT) is sponsoring NASA's G-III(C-20) UAVSAR science deployment to San Jose, Costa Rica April 25-28, 2011. NASA is very thankful for their support and has offered to provide a Top-Level presentation on the G-III UAVSAR program with specific emphasis on the science conducted in Costa Rica. The presentation will overview the G-III capabilities and the various science applications of UAVSAR. Only technical and scientific data that is already in the open literature will be presented.

21 CFR 111.27 - What requirements apply to the equipment and utensils that you use?

Code of Federal Regulations, 2012 CFR

2012-04-01

... MANUFACTURING, PACKAGING, LABELING, OR HOLDING OPERATIONS FOR DIETARY SUPPLEMENTS Equipment and Utensils § 111... contamination of components or dietary supplements with: (i) Lubricants; (ii) Fuel; (iii) Coolants; (iv) Metal... equipment or utensils contact components or dietary supplements; (iii) Made of nontoxic materials; (iv...

21 CFR 111.27 - What requirements apply to the equipment and utensils that you use?

Code of Federal Regulations, 2014 CFR

2014-04-01

... MANUFACTURING, PACKAGING, LABELING, OR HOLDING OPERATIONS FOR DIETARY SUPPLEMENTS Equipment and Utensils § 111... contamination of components or dietary supplements with: (i) Lubricants; (ii) Fuel; (iii) Coolants; (iv) Metal... equipment or utensils contact components or dietary supplements; (iii) Made of nontoxic materials; (iv...

Research Staff | Chemistry and Nanoscience Research | NREL

Science.gov Websites

Jeffrey Blackburn Jeffrey Blackburn Group Research Manager III-Materials Science Dr. Blackburn is a Senior Scientist and Group Manager at NREL, leading projects on a variety of fundamental and applied research -Electrical Engineering Guido.Bender@nrel.gov 303-275-3810 Blackburn, Jeffrey Group Research Manager III

Horticulture III, IV, and V. Task Analyses. Competency-Based Education.

ERIC Educational Resources Information Center

Henrico County Public Schools, Glen Allen, VA. Virginia Vocational Curriculum Center.

This task analysis guide is intended to help teachers and administrators develop instructional materials and implement competency-based education in the horticulture program. Section 1 contains a validated task inventory for horticulture III, IV, and V. For each task, applicable information pertaining to performance and enabling objectives,…

Modelling solid solutions with cluster expansion, special quasirandom structures, and thermodynamic approaches

NASA Astrophysics Data System (ADS)

Saltas, V.; Horlait, D.; Sgourou, E. N.; Vallianatos, F.; Chroneos, A.

2017-12-01

Modelling solid solutions is fundamental in understanding the properties of numerous materials which are important for a range of applications in various fields including nanoelectronics and energy materials such as fuel cells, nuclear materials, and batteries, as the systematic understanding throughout the composition range of solid solutions for a range of conditions can be challenging from an experimental viewpoint. The main motivation of this review is to contribute to the discussion in the community of the applicability of methods that constitute the investigation of solid solutions computationally tractable. This is important as computational modelling is required to calculate numerous defect properties and to act synergistically with experiment to understand these materials. This review will examine in detail two examples: silicon germanium alloys and MAX phase solid solutions. Silicon germanium alloys are technologically important in nanoelectronic devices and are also relevant considering the recent advances in ternary and quaternary groups IV and III-V semiconductor alloys. MAX phase solid solutions display a palette of ceramic and metallic properties and it is anticipated that via their tuning they can have applications ranging from nuclear to aerospace industries as well as being precursors for particular MXenes. In the final part, a brief summary assesses the limitations and possibilities of the methodologies discussed, whereas there is discussion on the future directions and examples of solid solution systems that should prove fruitful to consider.

Channeling techniques to study strains and defects in heterostructures and multi quantum wells

NASA Astrophysics Data System (ADS)

Pathak, A. P.; Dhamodaran, S.; Sathish, N.

2005-08-01

The importance and advantages of heterostructures and Quantum Wells (QWs) in device technology has made research challenging due to lack of direct techniques for their characterization. Particularly the characterization of strain and defects at the interfaces has become important due to their dominance in the electrical and optical properties of materials and devices. RBSiC has been used to study variety of defects in single crystalline materials, for nearly four decades now. Channeling based experiments play a crucial role in giving depth information of strain and defects. Ion beams are used for both material characterizations as well as for modifications. Hence it is also possible to monitor the modifications online, which are discussed in detail. In the present work, Swift Heavy Ion (SHI) modification of III-V semiconductor heterostnictures and MQWs and the results of subsequent strain measurements by RBSiC in initially strained as well as lattice matched systems are discussed. We find that the compressive strain decreases due to SHI irradiation and a tensile strain is induced in an initially lattice matched system. The incident ion fluence dependence of strain modifications in the heterostructures will also be discussed. The use of high energy channeling for better sensitivity of strain measurements in low mismatch materials will be discussed in detail. Wherever possible, a comparison of results with those obtained by other techniques like HRXRD is given.

Processing, Structure and High Temperature Oxidation Properties of Polymer-Derived and Hafnium Oxide Based Ceramic Systems

NASA Astrophysics Data System (ADS)

Terauds, Kalvis

Demands for hypersonic aircraft are driving the development of ultra-high temperature structural materials. These aircraft, envisioned to sustain Mach 5+, are expected to experience continuous temperatures of 1200--1800°C on the aircraft surface and temperatures as high as 2800°C in combustion zones. Breakthroughs in the development of fiber based ceramic matrix composites (CMCs) are opening the door to a new class of high-tech UHT structures for aerospace applications. One limitation with current carbon fiber or silicon carbide fiber based CMC technology is the inherent problem of material oxidation, requiring new approaches for protective environmental barrier coatings (EBC) in extreme environments. This thesis focuses on the development and characterization of SiCN-HfO2 based ceramic composite EBC systems to be used as a protective layer for silicon carbide fiber based CMCs. The presented work covers three main architectures for protection (i) multilayer films, (ii) polymer-derived HfSiCNO, and (iii) composite SiCN-HfO 2 infiltration. The scope of this thesis covers processing development, material characterization, and high temperature oxidation behavior of these three SiCN-HfO2 based systems. This work shows that the SiCN-HfO 2 composite materials react upon oxidation to form HfSiO4, offering a stable EBC in streaming air and water vapor at 1600°C.

Converting inert plastic waste into energetic materials: A study on the light-accelerated decomposition of plastic waste with the Fenton reaction.

PubMed

Chow, Cheuk-Fai; Wong, Wing-Leung; Chan, Ching-Wan; Chan, Chung-Sum

2018-05-01

Better treatment and management strategies than landfilling are needed to address the large quantities of unrecycled plastic waste generated by daily human activities. Waste-to-energy conversion is an ideal benchmark for developing future large-scale waste management technologies. The present study explores a new approach for producing energetic materials by converting inert plastic waste into energy (thermal and mechanical energies) via a light-controlled process through the simple chemical activation of plastic waste, including polyethylene, polypropylene, and polyvinyl chloride. The inert and non-polar polymer surfaces of the plastics were modified by generating a number of sulfonic groups (SO 3 - ) using chlorosulfuric acid, followed by grafting of Fe(III) catalyst onto the polymer chains to obtain activated polymer. Elemental analyses of these activated materials showed that the carbon-to-sulfur ratio ranged from 3:1 to 5:1. The FTIR spectra indicated the presence of CC bonds (v C=C : 1615-1630 cm -1 ) and SO bonds (v S=O : 1151-1167 cm -1 ) in the activated polymers after chemical reaction. These activated materials were energetic, as light could be used to convert them into thermal (1800-3200 J/g) and mechanical energies (380-560 kPa/g) using hydrogen peroxide as the oxidant under ambient conditions within 1 h. Copyright © 2018 Elsevier Ltd. All rights reserved.

RESNA Resource Guide for Assistive Technology Outcomes: Developing Domains of Need and Criteria of Services. Volume III.

ERIC Educational Resources Information Center

RESNA: Association for the Advancement of Rehabilitation Technology, Arlington, VA.

The third volume in a series of three resource guides, this volume provides an explanation of domains of anticipated assistive technology impact across functional areas of an individual's life. A matrix grid of functional categories affected by assistive technology is provided to serve as a developmental step toward the creation of guidelines for…

MINE WASTE TECHNOLOGY PROGRAM - UNDERGROUND MINE SOURCE CONTROL DEMONSTRATION PROJECT

EPA Science Inventory

This report presents results of the Mine Waste Technology Program Activity III, Project 8, Underground Mine Source Control Demonstration Project implemented and funded by the U. S. Environmental Protection Agency (EPA) and jointly administered by EPA and the U. S. Department of E...

STUDY BY AES AND EELS OF InP, InSb, InPO4 AND InxGa1-xAs SUBMITTED TO ELECTRON IRRADIATION

NASA Astrophysics Data System (ADS)

Ghaffour, M.; Abdellaoui, A.; Bouslama, M.; Ouerdane, A.; Al-Douri, Y.

2012-02-01

The surface of materials plays an important role in their technological applications. In the interest to study the stability of materials and their behavior, we irradiate them by the electrons by using the electron spectroscopy such as the Auger electron spectroscopy (AES) and the electron energy loss spectroscopy (EELS). These methods have proved their good sensitivity to study material surfaces. In this paper, we give some results about the effect of the electron beam irradiating the compounds InP, InSb, InPO4 and InxGa1-xAs. The III-V semiconductors InP and InSb seem to be sensitive to the electron irradiation. This breaks the chemical bonds between the element III and V which leads to an oxidation process at the surface. The AES and EELS spectroscopy are also used to characterize the oxide InPO4 whose thickness is about 10 Å grown on the substrate InP(100). The irradiation of the system InPO4/InP(100) by the electron beam of 5 keV energy leads to a structural change of the surface, so that there is breaking of chemical bonds between indium and phosphorus (In-P) and formation of new oxide other than InPO4. In this study we show an important result concerning the effect of the electron beam on the compound InxGa1-xAs by varying the parameter x to obtain In0.2Ga0.8As and In0.53Ga0.47As. It appears that the electron beam affects In0.2Ga0.8As too much in comparison with In0.53Ga0.47As. In the case of the irradiation of In0.2Ga0.8As, there is breaking of chemical bonds between indium and GaAs leading to formation of indium oxide associated to GaAs.

Cerium dioxide (CeO2) nanoparticles decrease arsenite (As(III)) cytotoxicity to 16HBE14o- human bronchial epithelial cells.

PubMed

Zeng, Chao; Nguyen, Chi; Boitano, Scott; Field, Jim A; Shadman, Farhang; Sierra-Alvarez, Reyes

2018-07-01

The production and application of engineered nanoparticles (NPs) are increasing in demand with the rapid development of nanotechnology. However, there are concerns that some of these novel materials could lead to emerging environmental and health problems. Some NPs are able to facilitate the transport of contaminants into cells/organisms via a "Trojan Horse" effect which enhances the toxicity of the adsorbed materials. In this work, we evaluated the toxicity of arsenite (As(III)) adsorbed onto cerium dioxide (CeO 2 ) NPs to human bronchial epithelial cells (16HBE14o-) using the xCELLigence real time cell analyzing system (RTCA). Application of 0.5 mg/L As(III) resulted in 81.3% reduction of cell index (CI, an RTCA measure of cell toxicity) over 48 h when compared to control cells exposed to medium lacking As(III). However, when the cells were exposed to 0.5 mg/L As(III) in the presence of CeO 2 NPs (250 mg/L), the CI was only reduced by 12.9% compared to the control. The CeO 2 NPs had a high capacity for As(III) adsorption (20.2 mg/g CeO 2 ) in the bioassay medium, effectively reducing dissolved As(III) in the aqueous solution and resulting in reduced toxicity. Transmission electron microscopy was used to study the transport of CeO 2 NPs into 16HBE14o- cells. NP uptake via engulfment was observed and the internalized NPs accumulated in vesicles. The results demonstrate that dissolved As(III) in the aqueous solution was the decisive factor controlling As(III) toxicity of 16HBE14o- cells, and that CeO 2 NPs effectively reduced available As(III) through adsorption. These data emphasize the evaluation of mixtures when assaying toxicity. Copyright © 2018 Elsevier Inc. All rights reserved.