Lurie, S. A.; Volkov-Bogorodskiy, D. B.; Knyzeva, A. G.; Panin, S. V.; Kornienko, L. A.
Friction properties being influenced by scale effects are simulated in the paper by the example of polymer composite material made from Ultra High-Molecular Weight Polyethylenes (UHMWPE) filled by calcium stearate (C36H70CaO4). Of interest are the composites whose mechanical properties and tribotechnical characteristics do not depend monotonically on filler (inclusions) weight fraction. In order to describe the influence of scale effects onto frictional properties the model based on Reiss averaging (model of "weak phase") is employed. It is also suggested that when gradient elasticity theory is applicable the formal analogy between effective friction coefficient for surface heterogeneous structures and effective mechanical properties (compliances) for heterogeneous material can take place. Theoretical dependence to describe nonmonotonic change of effective friction coefficient versus filler concentration was obtained for the polymer composites under study. The suggested expressions might be useful for the sake of properties prognosis of antifriction polymeric materilas.
Shibayama, Wataru; Shigaki, Shuhei; Takeda, Satoshi; Onishi, Ryuji; Nakajima, Makoto; Sakamoto, Rikimaru
EUV lithography has been desired as the leading technology for single nm half-pitch patterning. However, the source power, masks and resist materials still have critical issues for mass production. Especially in resist materials, RLS trade-off is the key issue. To overcome this issue, we are suggesting Dry Development Rinse Process (DDRP) and Materials (DDRM) as the pattern collapse mitigation approach. This DDRM can perform not only as pattern collapse free materials for fine pitch, but also as the etching hard mask against bottom layer (spin on carbon : SOC). In this paper, we especially propose new approaches to achieve high resolution around hp10nm. The key points of our concepts are 1) control PR profiles, 2) new solvent system to avoid chemical mixture, 3) high etching selective DDR materilas and 4) high planar DDR materials. This new DDRM technology can be the promising approach for hp10nm level patterning in N7/N5 and beyond.
Dale, G E; Langen, H; Page, M G; Then, R L; Stüber, D
In recent years resistance to the antibacterial agent trimethoprim (Tmp) has become more widespread, and several trimethoprim-resistant (Tmpr) dihydrofolate reductases (DHFRs) have been described from gram-negative bacteria. In staphylococci, only one Tmpr DHFR has been described, the type S1 DHFR, which is encoded by the dfrA gene found on transposon Tn4003. In order to investigate the coincidence of high-level Tmp resistance and the presence of dfrA, we analyzed the DNAs from various Tmpr staphylococci for the presence of dfrA sequences by PCR with primers specific for the thyE-dfrA genes from Tn4003. We found that 30 or 33 isolates highly resistant to Tmp (MICs, > or = 512 micrograms/ml) contained dfrA sequences, whereas among the Tmpr (MICs, < or = 256 micrograms/ml) and Tmps isolates only the Staphylococcus epidermidis isolates (both Tmpr and Tmps) seemed to contain the dfrA gene. Furthermore, we have cloned and characterized a novel, plasmid-encoded Tmpr DHFR from Staphylococcus haemolyticus MUR313. The dfrD gene of plasmid pABU17 is preceded by two putative Shine-Dalgarno sequences potentially allowing for the start of translation at two triplets separated by nine nucleotides. The predicted protein of 166 amino acids, designated S2DHFR, encoded by the longer open reading frame was overproduced in Escherichia coli, purified, and characterized. The molecular size of the recombinant S2DHFR was determined by ion spray mass spectrometry to be 19,821.2 +/- 2 Da, which is in agreement with the theoretical value of 19,822 Da. In addition, the recombinant S2DHFR was shown to exhibit DHFR activity and to be highly resistant to Tmp.
Xu, Biao; Ames Lab., Ames, IA; Feng, Tianli L.; ...
In order to enhance the performance of thermoelectric materials and enable access to their widespread applications, it is beneficial yet challenging to synthesize hollow nanostructures in large quantities, with high porosity, low thermal conductivity (κ) and excellent figure of merit (z T). We report a scalable (ca. 11.0 g per batch) and low-temperature colloidal processing route for Bi2Te2.5Se0.5 hollow nanostructures. They are sintered into porous, bulk nanocomposites (phi 10 mm×h 10 mm) with low κ (0.48 W m-1 K-1) and the highest z T (1.18) among state-of-the-art Bi2Te3-xSex materilas. Additional benefits of the unprecedented low relative density (68–77 %) aremore » the large demand reduction of raw materials and the improved portability. This method can be adopted to fabricate other porous phase-transition and thermoelectric chalcogenide materials and will pave the way for the implementation of hollow nanostructures in other fields.« less
Iijima, Masahiro; Ito, Shuichi; Nakagaki, Susumu; Muguruma, Takeshi; Kohda, Naohisa; Saito, Takashi; Mizoguchi, Itaru
This study investigated fluoride release, acid resistance and shear bond strength (SBS) of new 4-META/MMA-TBB-based fluoride-containing resin adhesive (Super-Bond/F3). Super-Bond, Transbond Plus and Fuji Ortho LC were selected for comparison. Fluoride release into distilled water during 6-month period was measured using disk-shaped specimens. Brackets were bonded to human premolars with each material and then the specimens for the nanoindentation test were subjected to alternating immersion (demineralizing and remineralizing solutions); the hardness and elastic modulus of the enamel around bracket were determined. Rest of the specimens was subjected to examine the SBS. Super-Bond/F3 and Fuji Ortho LC showed significantly greater fluoride release compared with the other materials. The reductions in hardness and the elastic modulus for Super-Bond/F3 and Fuji Ortho LC were lower than those for the other materilas. Super-Bond and Super-Bond/F3 showed significantly greater SBS than Fuji Ortho FC. In conclusion, Super-Bond/F3 showed high fluoride-release, cariostatic potential and equivalent SBS.