Effects of Intercellular Junction Protein Expression on Intracellular Ice Formation in Mouse Insulinoma Cells

PubMed Central

Higgins, Adam Z.; Karlsson, Jens O.M.

2013-01-01

The development of cryopreservation procedures for tissues has proven to be difficult in part because cells within tissue are more susceptible to intracellular ice formation (IIF) than are isolated cells. In particular, previous studies suggest that cell-cell interactions increase the likelihood of IIF by enabling propagation of ice between neighboring cells, a process thought to be mediated by gap junction channels. In this study, we investigated the effects of cell-cell interactions on IIF using three genetically modified strains of the mouse insulinoma cell line MIN6, each of which expressed key intercellular junction proteins (connexin-36, E-cadherin, and occludin) at different levels. High-speed video cryomicroscopy was used to visualize the freezing process in pairs of adherent cells, revealing that the initial IIF event in a given cell pair was correlated with a hitherto unrecognized precursor phenomenon: penetration of extracellular ice into paracellular spaces at the cell-cell interface. Such paracellular ice penetration occurred in the majority of cell pairs observed, and typically preceded and colocalized with the IIF initiation events. Paracellular ice penetration was generally not observed at temperatures >−5.65°C, which is consistent with a penetration mechanism via defects in tight-junction barriers at the cell-cell interface. Although the maximum temperature of paracellular penetration was similar for all four cell strains, genetically modified cells exhibited a significantly higher frequency of ice penetration and a higher mean IIF temperature than did wild-type cells. A four-state Markov chain model was used to quantify the rate constants of the paracellular ice penetration process, the penetration-associated IIF initiation process, and the intercellular ice propagation process. In the initial stages of freezing (>−15°C), junction protein expression appeared to only have a modest effect on the kinetics of propagative IIF, and even cell strains lacking the gap junction protein connexin-36 exhibited nonnegligible ice propagation rates. PMID:24209845

Micro-Scale Avionics Thermal Management

NASA Technical Reports Server (NTRS)

Moran, Matthew E.

2001-01-01

Trends in the thermal management of avionics and commercial ground-based microelectronics are converging, and facing the same dilemma: a shortfall in technology to meet near-term maximum junction temperature and package power projections. Micro-scale devices hold the key to significant advances in thermal management, particularly micro-refrigerators/coolers that can drive cooling temperatures below ambient. A microelectromechanical system (MEMS) Stirling cooler is currently under development at the NASA Glenn Research Center to meet this challenge with predicted efficiencies that are an order of magnitude better than current and future thermoelectric coolers.

Nanoscale insight into the p-n junction of alkali-incorporated Cu(In,Ga)Se 2 solar cells

DOE PAGES

Stokes, Adam; Al-Jassim, Mowafak; Norman, Andrew; ...

2017-04-05

The effects of alkali diffusion and post-deposition treatment in three-stage processed Cu(In,Ga)Se 2 solar cells are examined by using atom probe tomography and electrical property measurements. Cells, for which the substrate was treated at 650 °C to induce alkali diffusion from the substrate prior to absorber deposition, exhibited high open-circuit voltage (758 mV) and efficiency (18.2%) and also exhibited a 50 to 100-nm-thick ordered vacancy compound layer at the metallurgical junction. Surprisingly, these high-temperature samples exhibited higher concentrations of K at the junction (1.8 at.%) than post-deposition treatment samples (0.4 at.%). A model that uses Ga/(Ga + In) and Cu/(Gamore » + In) profiles to predict bandgaps (+/-17.9 meV) of 22 Cu(In,Ga)Se2 solar cells reported in literature was discussed and ultimately used to predict band properties at the nanoscale by using atom probe tomography data. The high-temperature samples exhibited a greater drop in the valence band maximum (200 meV) due to a lower Cu/(Ga + In) ratio than the post-deposition treatment samples. There was an anticorrelation of K concentrations and Cu/(Ga + In) ratios for all samples, regardless of processing conditions. In conclusion, changes in elemental profiles at the active junctions correlate well with the electrical behaviour of these devices.« less

Development and fabrication of a high current, fast recovery power diode

NASA Technical Reports Server (NTRS)

Berman, A. H.; Balodis, V.; Devance, D. C.; Gaugh, C. E.; Karlsson, E. A.

1983-01-01

A high voltage (VR = 1200 V), high current (IF = 150 A), fast recovery ( 700 ns) and low forward voltage drop ( 1.5 V) silicon rectifier was designed and the process developed for its fabrication. For maximum purity, uniformity and material characteristic stability, neutron transmutation n-type doped float zone silicon is used. The design features a hexagonal chip for maximum area utilization of space available in the DO-8 diode package, PIN diffused junction structure with deep diffused D(+) anode and a shallow high concentration n(+) cathode. With the high temperature glass passivated positive bevel mesa junction termination, the achieved blocking voltage is close to the theoretical limit of the starting material. Gold diffusion is used to control the lifetime and the resulting effect on switching speed and forward voltage tradeoff. For solder reflow assembly, trimetal (Al-Ti-Ni) contacts are used. The required major device electrical characteristics were achieved. Due to the tradeoff nature of forward voltage drop and reverse recovery time, a compromise was reached for these values.

Air-Cooled Heat Exchanger for High-Temperature Power Electronics: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Waye, S. K.; Lustbader, J.; Musselman, M.

2015-05-06

This work demonstrates a direct air-cooled heat exchanger strategy for high-temperature power electronic devices with an application specific to automotive traction drive inverters. We present experimental heat dissipation and system pressure curves versus flow rate for baseline and optimized sub-module assemblies containing two ceramic resistance heaters that provide device heat fluxes. The maximum allowable junction temperature was set to 175 deg.C. Results were extrapolated to the inverter scale and combined with balance-of-inverter components to estimate inverter power density and specific power. The results exceeded the goal of 12 kW/L and 12 kW/kg for power density and specific power, respectively.

Tunnel magnetoresistance in ultrathin L10 MnGa/MgO perpendicular magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Suzuki, K. Z.; Miura, Y.; Ranjbar, R.; Sugihara, A.; Mizukami, S.

2018-06-01

L10 MnGa is one of the interesting magnetic alloys for spin-transfer-torque based applications because such alloys have high perpendicular magnetic anisotropy, small magnetization, and low Gilbert damping. Magnetic tunnel junctions (MTJs) with ultrathin MnGa electrodes have recently been demonstrated using the room temperature growth technique of MnGa on paramagnetic B2-ordered CoGa templates, which exhibited a small TMR ratio of  ∼3%. To obtain a higher TMR ratio, we systematically investigated the annealing dependence of the TMR ratio with MTJs with 1–5 nm thick MnGa electrodes in this study. The TMR ratios were 2%–3% without annealing, which were the same as those reported previously, and the TMR ratios reached their maximum values of 6%–8% at an annealing temperature of approximately 250 °C for the MTJs with 2–5 nm MnGa electrodes. The TMR ratio increased to approximately 25% at 10 K for those MTJs. These TMR ratios were slightly higher than those reported in MTJs with 30 nm-thick MnGa electrodes. The annealing temperature at which TMR showed the maximum value tended to decrease with decreasing MnGa thickness, and this low annealing endurance may be attributed to the atomic mixing between MnGa and barrier/buffer layers. The TMR ratio was discussed in terms of both coherent tunneling based on first principles calculations with different element terminations at the interface and incoherent tunneling.

Gap/silicon Tandem Solar Cell with Extended Temperature Range

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A. (Inventor)

2006-01-01

A two-junction solar cell has a bottom solar cell junction of crystalline silicon, and a top solar cell junction of gallium phosphide. A three (or more) junction solar cell has bottom solar cell junctions of silicon, and a top solar cell junction of gallium phosphide. The resulting solar cells exhibit improved extended temperature operation.

Temperature dependence of a superconducting tunnel junction x-ray detector

NASA Astrophysics Data System (ADS)

Hiller, Lawrence J.; Labov, Simon E.; Mears, Carl A.; Barfknecht, Andrew T.; Frank, Matthias A.; Netel, Harrie; Lindeman, Mark A.

1995-09-01

Superconducting tunnel junctions can be used as part of a high-resolution, energy-dispersive x- ray detector. The energy of the absorbed x ray is used to break superconducting electron pairs, producing on the order of 10(superscript 6) excitations, called quasiparticles. The number of quasiparticles produced is proportional to the energy of the absorbed x ray. When a bias voltage is maintained across the barrier, these quasiparticles produce a net tunneling current. Either the peak tunneling current or the total tunneled charge may be measured to determine the energy of the absorbed x ray. The tunneling rate, and therefore the signal, is enhanced by the use of a quasiparticle trap near the tunnel barrier. The trapping efficiency is improved by decreasing the energy gap, though this reduces the maximum temperature at which the device may operate. In our niobium/aluminum configuration, we can very the energy gap in the trapping layer by varying its thickness. This paper examines the performance of two devices with 50 nm aluminum traps at temperatures ranging from 100 mK to 700 mK. We found that this device has a very good energy resolution of about 12 eV FWHM at 1 keV. This energy resolution is independent of temperature for much of this temperature range.

Hybrid thermoelectric solar collector design and analysis

NASA Technical Reports Server (NTRS)

Roberts, A. S., Jr.; Shaheen, K. E.

1982-01-01

A flat-plate solar collector is conceived where energy cascades through thermoelectric power modules generating direct-current electricity. The intent of this work was to choose a collector configuration and to perform a steady-state thermal performance assessment. A set of energy balance equations were written and solved numerically for the purpose of optimizing collector thermal and electrical performance. The collector design involves finned columns of thermoelectric modules imbedded in the absorber plate (hot junction) over a parallel array of vertical tubes. The thermoelectric power output is limited by the small hot-junction/cold-junction temperature difference which can be maintained under steady-state conditions. The electric power per unit tube pass area is found to have a maximum as a function of a geometric parameter, while electric power is maximized with respect to an electric resistance ratio. Although the electric power efficiency is small, results indicate that there is sufficient electric power production to drive a coolant circulator, suggesting the potential for a stand-alone system.

Optimization design of LED heat dissipation structure based on strip fins

NASA Astrophysics Data System (ADS)

Xue, Lingyun; Wan, Wenbin; Chen, Qingguang; Rao, Huanle; Xu, Ping

2018-03-01

To solve the heat dissipation problem of LED, a radiator structure based on strip fins is designed and the method to optimize the structure parameters of strip fins is proposed in this paper. The combination of RBF neural networks and particle swarm optimization (PSO) algorithm is used for modeling and optimization respectively. During the experiment, the 150 datasets of LED junction temperature when structure parameters of number of strip fins, length, width and height of the fins have different values are obtained by ANSYS software. Then RBF neural network is applied to build the non-linear regression model and the parameters optimization of structure based on particle swarm optimization algorithm is performed with this model. The experimental results show that the lowest LED junction temperature reaches 43.88 degrees when the number of hidden layer nodes in RBF neural network is 10, the two learning factors in particle swarm optimization algorithm are 0.5, 0.5 respectively, the inertia factor is 1 and the maximum number of iterations is 100, and now the number of fins is 64, the distribution structure is 8*8, and the length, width and height of fins are 4.3mm, 4.48mm and 55.3mm respectively. To compare the modeling and optimization results, LED junction temperature at the optimized structure parameters was simulated and the result is 43.592°C which approximately equals to the optimal result. Compared with the ordinary plate-fin-type radiator structure whose temperature is 56.38°C, the structure greatly enhances heat dissipation performance of the structure.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stokes, Adam; Al-Jassim, Mowafak; Norman, Andrew

The effects of alkali diffusion and post-deposition treatment in three-stage processed Cu(In,Ga)Se 2 solar cells are examined by using atom probe tomography and electrical property measurements. Cells, for which the substrate was treated at 650 °C to induce alkali diffusion from the substrate prior to absorber deposition, exhibited high open-circuit voltage (758 mV) and efficiency (18.2%) and also exhibited a 50 to 100-nm-thick ordered vacancy compound layer at the metallurgical junction. Surprisingly, these high-temperature samples exhibited higher concentrations of K at the junction (1.8 at.%) than post-deposition treatment samples (0.4 at.%). A model that uses Ga/(Ga + In) and Cu/(Gamore » + In) profiles to predict bandgaps (+/-17.9 meV) of 22 Cu(In,Ga)Se2 solar cells reported in literature was discussed and ultimately used to predict band properties at the nanoscale by using atom probe tomography data. The high-temperature samples exhibited a greater drop in the valence band maximum (200 meV) due to a lower Cu/(Ga + In) ratio than the post-deposition treatment samples. There was an anticorrelation of K concentrations and Cu/(Ga + In) ratios for all samples, regardless of processing conditions. In conclusion, changes in elemental profiles at the active junctions correlate well with the electrical behaviour of these devices.« less

An AlGaN Core-Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band.

PubMed

Sadaf, S M; Zhao, S; Wu, Y; Ra, Y-H; Liu, X; Vanka, S; Mi, Z

2017-02-08

To date, semiconductor light emitting diodes (LEDs) operating in the deep ultraviolet (UV) spectral range exhibit very low efficiency due to the presence of large densities of defects and extremely inefficient p-type conduction of conventional AlGaN quantum well heterostructures. We have demonstrated that such critical issues can be potentially addressed by using nearly defect-free AlGaN tunnel junction core-shell nanowire heterostructures. The core-shell nanowire arrays exhibit high photoluminescence efficiency (∼80%) in the UV-C band at room temperature. With the incorporation of an epitaxial Al tunnel junction, the p-(Al)GaN contact-free nanowire deep UV LEDs showed nearly one order of magnitude reduction in the device resistance, compared to the conventional nanowire p-i-n device. The unpackaged Al tunnel junction deep UV LEDs exhibit an output power >8 mW and a peak external quantum efficiency ∼0.4%, which are nearly one to two orders of magnitude higher than previously reported AlGaN nanowire devices. Detailed studies further suggest that the maximum achievable efficiency is limited by electron overflow and poor light extraction efficiency due to the TM polarized emission.

Magnetic field penetration in niobium- and vanadium-based Josephson junctions

NASA Astrophysics Data System (ADS)

Cucolo, A. M.; Pace, S.; Vaglio, R.; di Chiara, A.; Peluso, G.; Russo, M.

1983-02-01

Measurements on the temperature dependence of the magnetic field penetration in Nb-NbxOy-Pb and V-VxOy-Pb Josephson junctions have been performed. Results on the zero-temperature penetration depth in niobium films are far above the bulk values although consistent with other measurements on junctions reported in the literature. For vanadium junctions anomalously large penetration depth values are obtained at low temperatures. Nevertheless, the temperature dependence is in reasonable agreement with the local dirty limit model.

[A new non-contact method based on relative spectral intensity for determining junction temperature of LED].

PubMed

Qiu, Xi-Zhen; Zhang, Fang-Hui

2013-01-01

The high-power white LED was prepared based on the high thermal conductivity aluminum, blue chips and YAG phosphor. By studying the spectral of different junction temperature, we found that the radiation spectrum of white LED has a minimum at 485 nm. The radiation intensity at this wavelength and the junction temperature show a good linear relationship. The LED junction temperature was measured based on the formula of relative spectral intensity and junction temperature. The result measured by radiation intensity method was compared with the forward voltage method and spectral method. The experiment results reveal that the junction temperature measured by this method was no more than 2 degrees C compared with the forward voltage method. It maintains the accuracy of the forward voltage method and overcomes the small spectral shift of spectral method, which brings the shortcoming on the results. It also had the advantages of practical, efficient and intuitive, noncontact measurement, and non-destruction to the lamp structure.

Outdoor Performance of a Thin-Film Gallium-Arsenide Photovoltaic Module

DOE Office of Scientific and Technical Information (OSTI.GOV)

Silverman, T. J.; Deceglie, M. G.; Marion, B.

2013-06-01

We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to silicon (Si), the module responds differently to outdoor conditions. On average during the test, the GaAs module produced more power when its temperature was higher. We show that its maximum-power temperature coefficient, while actually negative, is several times smaller in magnitude than that of a Si module used for comparison. The positive correlation of power with temperature in GaAs is due to temperature-correlated changes in the incident spectrum. We show that a simple correction based on precipitablemore » water vapor (PWV) brings the photocurrent temperature coefficient into agreement with that measured by other methods and predicted by theory. The low operating temperature and small temperature coefficient of GaAs give it an energy production advantage in warm weather.« less

Inverse heat conduction estimation of inner wall temperature fluctuations under turbulent penetration

NASA Astrophysics Data System (ADS)

Guo, Zhouchao; Lu, Tao; Liu, Bo

2017-04-01

Turbulent penetration can occur when hot and cold fluids mix in a horizontal T-junction pipe at nuclear plants. Caused by the unstable turbulent penetration, temperature fluctuations with large amplitude and high frequency can lead to time-varying wall thermal stress and even thermal fatigue on the inner wall. Numerous cases, however, exist where inner wall temperatures cannot be measured and only outer wall temperature measurements are feasible. Therefore, it is one of the popular research areas in nuclear science and engineering to estimate temperature fluctuations on the inner wall from measurements of outer wall temperatures without damaging the structure of the pipe. In this study, both the one-dimensional (1D) and the two-dimensional (2D) inverse heat conduction problem (IHCP) were solved to estimate the temperature fluctuations on the inner wall. First, numerical models of both the 1D and the 2D direct heat conduction problem (DHCP) were structured in MATLAB, based on the finite difference method with an implicit scheme. Second, both the 1D IHCP and the 2D IHCP were solved by the steepest descent method (SDM), and the DHCP results of temperatures on the outer wall were used to estimate the temperature fluctuations on the inner wall. Third, we compared the temperature fluctuations on the inner wall estimated by the 1D IHCP with those estimated by the 2D IHCP in four cases: (1) when the maximum disturbance of temperature of fluid inside the pipe was 3°C, (2) when the maximum disturbance of temperature of fluid inside the pipe was 30°C, (3) when the maximum disturbance of temperature of fluid inside the pipe was 160°C, and (4) when the fluid temperatures inside the pipe were random from 50°C to 210°C.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deschenes, Austin; Muneer, Sadid; Akbulut, Mustafa

Thermal assistance has been shown to significantly reduce the required operation power for spin torque transfer magnetic random access memory (STT-MRAM). Proposed heating methods include modified material stack compositions that result in increased self-heating or external heat sources. Here, we analyze the self-heating process of a standard perpendicular magnetic anisotropy STT-MRAM device through numerical simulations in order to understand the relative contributions of Joule, thermoelectric Peltier and Thomson, and tunneling junction heating. A 2D rotationally symmetric numerical model is used to solve the coupled electro-thermal equations including thermoelectric effects and heat absorbed or released at the tunneling junction. We comparemore » self-heating for different common passivation materials, positive and negative electrical current polarity, and different device thermal anchoring and boundaries resistance configurations. The variations considered are found to result in significant differences in maximum temperatures reached. Average increases of 3 K, 10 K, and 100 K for different passivation materials, positive and negative polarity, and different thermal anchoring configurations, respectively, are observed. Furthermore, the highest temperatures, up to 424 K, are obtained for silicon dioxide as the passivation material, positive polarity, and low thermal anchoring with thermal boundary resistance configurations. Interestingly it is also found that due to the tunneling heat, Peltier effect, device geometry, and numerous interfacial layers around the magnetic tunnel junction (MTJ), most of the heat is dissipated on the lower potential side of the magnetic junction. We have observed this asymmetry in heating and is important as thermally assisted switching requires heating of the free layer specifically and this will be significantly different for the two polarity operations, set and reset.« less

Temperature detection in a gas turbine

DOEpatents

Lacy, Benjamin; Kraemer, Gilbert; Stevenson, Christian

2012-12-18

A temperature detector includes a first metal and a second metal different from the first metal. The first metal includes a plurality of wires and the second metal includes a wire. The plurality of wires of the first metal are connected to the wire of the second metal in parallel junctions. Another temperature detector includes a plurality of resistance temperature detectors. The plurality of resistance temperature detectors are connected at a plurality of junctions. A method of detecting a temperature change of a component of a turbine includes providing a temperature detector include ing a first metal and a second metal different from the first metal connected to each other at a plurality of junctions in contact with the component; and detecting any voltage change at any junction.

Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiu, Weicheng; National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083; Hu, Weida, E-mail: wdhu@mail.sitp.ac.cn

2014-11-10

In this paper, we report on the disappearance of the photosensitive area extension effect and the unusual temperature dependence of junction transformation for mid-wavelength, n-on-p HgCdTe photovoltaic infrared detector arrays. The n-type region is formed by B{sup +} ion implantation on Hg-vacancy-doped p-type HgCdTe. Junction transformations under different temperatures are visually captured by a laser beam induced current microscope. A physical model of temperature dependence on junction transformation is proposed and demonstrated by using numerical simulations. It is shown that Hg-interstitial diffusion and temperature activated defects jointly lead to the p-n junction transformation dependence on temperature, and the weaker mixedmore » conduction compared with long-wavelength HgCdTe photodiode contributes to the disappearance of the photosensitive area extension effect in mid-wavelength HgCdTe infrared detector arrays.« less

Investigation Results on Solar Array Thermal & Electrical Imbalance Phenomenon on Power Systems Equipped with MPPT

NASA Astrophysics Data System (ADS)

Mercier, F.; Samaniego, B.; Soriano, T.; Beaufils, G.; Fernandez Lisbona, E.; Dettlaff, K.; Jensen, H.

2014-08-01

The thermal / electrical imbalance phenomenon on the satellite solar arrays is a common issue inherent to the negative thermal voltage coefficient of the triple junction cells, which is usually already taken into account with basic precautions on the solar panel layout.In the frame of the ESA TRP study "Investigation on Solar Array thermal and electrical imbalance phenomenon on power systems equipped with Maximum Power Point Tracker (MPPT)" performed by Airbus Defence & Space (former Astrium Toulouse and Ottobrunn) and TERMA, in-depth analyses were conducted for the first time to better understand and characterize the secondary maximum power point phenomenon for various representative mission cases, whether in Earth vicinity or not. With the help of a newly developed detailed thermo-electrical coupled solver and a wide range of solar cell characterizations in flux and temperature, multiple sets of simulations were run to simulate realistic solar panel characteristics.The study showed that no secondary false maximum power point can be created on the solar panel characteristic IV curve for missions around Earth vicinity, at the sole exception of critical shadowing cases. Furthermore, the same conclusions apply for missions up to Mars orbit. The only potential threats come from the missions further than Mars (typically Jupiter missions) where various very high heterogeneities could lead to multiple maxima. This is deeply linked to the LILT (low illumination low temperature) conditions applied to the current solar cell triple junction characteristics and shape. Moreover, thermo-electrical imbalances that do not create secondary power point can still seriously grieve the solar array power output performances. This power loss can however be accurately assessed by the newly developed solver in support of in-development missions like Juice.

Spin wave interference in YIG cross junction

DOE PAGES

Balinskiy, M.; Gutierrez, D.; Chiang, H.; ...

2017-01-17

This work is aimed at studying the interference between backward volume magnetostatic spin waves and magnetostatic surface spin waves in a magnetic cross junction. These two types of magnetostatic waves possess different dispersion with zero frequency overlap in infinite magnetic films. However, the interference may be observed in finite structures due to the effect magnetic shape anisotropy. We report experimental data on spin wave interference in a micrometer size Y 3Fe 2(FeO 4) 3 cross junction. There are four micro antennas fabricated at the edges of the cross arms. Two of these antennas located on the orthogonal arms are usedmore » for spin wave generation, and the other two antennas are used for the inductive voltage detection. The phase difference between the input signals is controlled by the phase shifter. Prominent spin wave interference is observed at the selected combination of operational frequency and bias magnetic field. The maximum On/Off ratio exceeds 30dB at room temperature. The obtained results are important for a variety of magnetic devices based on spin wave interference.« less

Wideband Isolation by Frequency Conversion in a Josephson-Junction Transmission Line

NASA Astrophysics Data System (ADS)

Ranzani, Leonardo; Kotler, Shlomi; Sirois, Adam J.; DeFeo, Michael P.; Castellanos-Beltran, Manuel; Cicak, Katarina; Vale, Leila R.; Aumentado, José

2017-11-01

Nonreciprocal transmission and isolation at microwave frequencies are important in many practical applications. In particular, compact isolators are useful in protecting sensitive quantum circuits operating at cryogenic temperatures from amplifier backaction and other environmental noise such as black-body radiation from higher temperature stages. However, the size of commercial cryogenic isolators limits the ability to measure multiple quantum circuits because of space constraints in typical dilution refrigerator systems. Furthermore, isolators usually require the use of ferrite components that cannot be integrated at the chip level and, since they also need large biasing magnetic fields, are incompatible with superconducting quantum circuits. In this work we show one way to accomplish isolation in a superconducting chip-scale device, a traveling-wave unidirectional frequency converter based on a parametrically pumped superconducting Josephson-junction transmission line, demonstrating better than 4.8 dB of inferred signal isolation from 6.6 to 11.4 GHz, with a maximum of 12 dB at 9.5 GHz. By using frequency diplexing techniques a conventional isolator could be implemented over this bandwidth.

Temperature issues with white laser diodes, calculation and approach for new packages

NASA Astrophysics Data System (ADS)

Lachmayer, Roland; Kloppenburg, Gerolf; Stephan, Serge

2015-01-01

Bright white light sources are of significant importance for automotive front lighting systems. Today's upper class systems mainly use HID or LED light sources. As a further step laser diode based systems offer a high luminance, efficiency and allow the realization of new dynamic and adaptive light functions and styling concepts. The use of white laser diode systems in automotive applications is still limited to laboratories and prototypes even though announcements of laser based front lighting systems have been made. But the environment conditions for vehicles and other industry sectors differ from laboratory conditions. Therefor a model of the system's thermal behavior is set up. The power loss of a laser diode is transported as thermal flux from the junction layer to the diode's case and on to the environment. Therefor its optical power is limited by the maximum junction temperature (for blue diodes typically 125 - 150 °C), the environment temperature and the diode's packaging with its thermal resistances. In a car's headlamp the environment temperature can reach up to 80 °C. While the difference between allowed case temperature and environment temperature is getting small or negative the relevant heat flux also becomes small or negative. In early stages of LED development similar challenges had to be solved. Adapting LED packages to the conditions in a vehicle environment lead to today's efficient and bright headlights. In this paper the need to transfer these results to laser diodes is shown by calculating the diodes lifetimes based on the presented model.

Effect of Front-Side Silver Metallization on Underlying n+-p Junction in Multicrystalline Silicon Solar Cells: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, C. S.; Li, Z. G.; Moutinho, H. R.

2012-06-01

We report on the effect of front-side Ag metallization on the underlying n+-p junction of multicrystalline Si solar cells. The junction quality beneath the contacts was investigated by characterizing the uniformities of the electrostatic potential and doping concentration across the junction, using scanning Kelvin probe force microscopy and scanning capacitance microscopy. We investigated cells with a commercial Ag paste (DuPont PV159) and fired at furnace setting temperatures of 800 degrees, 840 degrees, and 930 degrees C, which results in actual cell temperatures ~100 degrees C lower than the setting temperature and the three cells being under-, optimal-, and over-fired. Wemore » found that the uniformity of the junction beneath the Ag contact was significantly degraded by the over-firing, whereas the junction retained good uniformity with the optimal- and under-fire temperatures. Further, Ag crystallites with widely distributed sizes from <100 nm to several μm were found at the Ag/Si interface of the over-fired cell. Large crystallites were imaged as protrusions into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of the junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent recrystallization with incorporation of impurities in the Ag paste and with formation of crystallographic defects during quenching.« less

Electronic thermometry in tunable tunnel junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maksymovych, Petro

A tunable tunnel junction thermometry circuit includes a variable width tunnel junction between a test object and a probe. The junction width is varied and a change in thermovoltage across the junction with respect to the change in distance across the junction is determined. Also, a change in biased current with respect to a change in distance across the junction is determined. A temperature gradient across the junction is determined based on a mathematical relationship between the temperature gradient, the change in thermovoltage with respect to distance and the change in biased current with respect to distance. Thermovoltage may bemore » measured by nullifying a thermoelectric tunneling current with an applied voltage supply level. A piezoelectric actuator may modulate the probe, and thus the junction width, to vary thermovoltage and biased current across the junction. Lock-in amplifiers measure the derivatives of the thermovoltage and biased current modulated by varying junction width.« less

In situ measurement of the junction temperature of light emitting diodes using a flexible micro temperature sensor.

PubMed

Lee, Chi-Yuan; Su, Ay; Liu, Yin-Chieh; Fan, Wei-Yuan; Hsieh, Wei-Jung

2009-01-01

This investigation aimed to fabricate a flexible micro resistive temperature sensor to measure the junction temperature of a light emitting diode (LED). The junction temperature is typically measured using a thermal resistance measurement approach. This approach is limited in that no standard regulates the timing of data capture. This work presents a micro temperature sensor that can measure temperature stably and continuously, and has the advantages of being lightweight and able to monitor junction temperatures in real time. Micro-electro-mechanical-systems (MEMS) technologies are employed to minimize the size of a temperature sensor that is constructed on a stainless steel foil substrate (SS-304 with 30 μm thickness). A flexible micro resistive temperature sensor can be fixed between the LED chip and the frame. The junction temperature of the LED can be measured from the linear relationship between the temperature and the resistance. The sensitivity of the micro temperature sensor is 0.059 ± 0.004 Ω/°C. The temperature of the commercial CREE(®) EZ1000 chip is 119.97 °C when it is thermally stable, as measured using the micro temperature sensor; however, it was 126.9 °C, when measured by thermal resistance measurement. The micro temperature sensor can be used to replace thermal resistance measurement and performs reliably.

Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory

DOE PAGES

Deschenes, Austin; Muneer, Sadid; Akbulut, Mustafa; ...

2016-11-11

Thermal assistance has been shown to significantly reduce the required operation power for spin torque transfer magnetic random access memory (STT-MRAM). Proposed heating methods include modified material stack compositions that result in increased self-heating or external heat sources. Here, we analyze the self-heating process of a standard perpendicular magnetic anisotropy STT-MRAM device through numerical simulations in order to understand the relative contributions of Joule, thermoelectric Peltier and Thomson, and tunneling junction heating. A 2D rotationally symmetric numerical model is used to solve the coupled electro-thermal equations including thermoelectric effects and heat absorbed or released at the tunneling junction. We comparemore » self-heating for different common passivation materials, positive and negative electrical current polarity, and different device thermal anchoring and boundaries resistance configurations. The variations considered are found to result in significant differences in maximum temperatures reached. Average increases of 3 K, 10 K, and 100 K for different passivation materials, positive and negative polarity, and different thermal anchoring configurations, respectively, are observed. Furthermore, the highest temperatures, up to 424 K, are obtained for silicon dioxide as the passivation material, positive polarity, and low thermal anchoring with thermal boundary resistance configurations. Interestingly it is also found that due to the tunneling heat, Peltier effect, device geometry, and numerous interfacial layers around the magnetic tunnel junction (MTJ), most of the heat is dissipated on the lower potential side of the magnetic junction. We have observed this asymmetry in heating and is important as thermally assisted switching requires heating of the free layer specifically and this will be significantly different for the two polarity operations, set and reset.« less

A spectral measurement method for determining white OLED average junction temperatures

NASA Astrophysics Data System (ADS)

Zhu, Yiting; Narendran, Nadarajah

2016-09-01

The objective of this study was to investigate an indirect method of measuring the average junction temperature of a white organic light-emitting diode (OLED) based on temperature sensitivity differences in the radiant power emitted by individual emitter materials (i.e., "blue," "green," and "red"). The measured spectral power distributions (SPDs) of the white OLED as a function of temperature showed amplitude decrease as a function of temperature in the different spectral bands, red, green, and blue. Analyzed data showed a good linear correlation between the integrated radiance for each spectral band and the OLED panel temperature, measured at a reference point on the back surface of the panel. The integrated radiance ratio of the spectral band green compared to red, (G/R), correlates linearly with panel temperature. Assuming that the panel reference point temperature is proportional to the average junction temperature of the OLED panel, the G/R ratio can be used for estimating the average junction temperature of an OLED panel.

Amorphous Silicon p-i-n Structure Acting as Light and Temperature Sensor

PubMed Central

de Cesare, Giampiero; Nascetti, Augusto; Caputo, Domenico

2015-01-01

In this work, we propose a multi-parametric sensor able to measure both temperature and radiation intensity, suitable to increase the level of integration and miniaturization in Lab-on-Chip applications. The device is based on amorphous silicon p-doped/intrinsic/n-doped thin film junction. The device is first characterized as radiation and temperature sensor independently. We found a maximum value of responsivity equal to 350 mA/W at 510 nm and temperature sensitivity equal to 3.2 mV/K. We then investigated the effects of the temperature variation on light intensity measurement and of the light intensity variation on the accuracy of the temperature measurement. We found that the temperature variation induces an error lower than 0.55 pW/K in the light intensity measurement at 550 nm when the diode is biased in short circuit condition, while an error below 1 K/µW results in the temperature measurement when a forward bias current higher than 25 µA/cm2 is applied. PMID:26016913

Relationships between junction temperature, electroluminescence spectrum and ageing of light-emitting diodes

NASA Astrophysics Data System (ADS)

Vaskuri, Anna; Kärhä, Petri; Baumgartner, Hans; Kantamaa, Olli; Pulli, Tomi; Poikonen, Tuomas; Ikonen, Erkki

2018-04-01

We have developed spectral models describing the electroluminescence spectra of AlGaInP and InGaN light-emitting diodes (LEDs) consisting of the Maxwell-Boltzmann distribution and the effective joint density of states. One spectrum at a known temperature for one LED specimen is needed for calibrating the model parameters of each LED type. Then, the model can be used for determining the junction temperature optically from the spectral measurement, because the junction temperature is one of the free parameters. We validated the models using, in total, 53 spectra of three red AlGaInP LED specimens and 72 spectra of three blue InGaN LED specimens measured at various current levels and temperatures between 303 K and 398 K. For all the spectra of red LEDs, the standard deviation between the modelled and measured junction temperatures was only 2.4 K. InGaN LEDs have a more complex effective joint density of states. For the blue LEDs, the corresponding standard deviation was 11.2 K, but it decreased to 3.5 K when each LED specimen was calibrated separately. The method of determining junction temperature was further tested on white InGaN LEDs with luminophore coating and LED lamps. The average standard deviation was 8 K for white InGaN LED types. We have six years of ageing data available for a set of LED lamps and we estimated the junction temperatures of these lamps with respect to their ageing times. It was found that the LEDs operating at higher junction temperatures were frequently more damaged.

Heat-Assisted Multiferroic Solid-State Memory

PubMed Central

2017-01-01

A heat-assisted multiferroic solid-state memory design is proposed and analysed, based on a PbNbZrSnTiO3 antiferroelectric layer and Ni81Fe19 magnetic free layer. Information is stored as magnetisation direction in the free layer of a magnetic tunnel junction element. The bit writing process is contactless and relies on triggering thermally activated magnetisation switching of the free layer towards a strain-induced anisotropy easy axis. A stress is generated using the antiferroelectric layer by voltage-induced antiferroelectric to ferroelectric phase change, and this is transmitted to the magnetic free layer by strain-mediated coupling. The thermally activated strain-induced magnetisation switching is analysed here using a three-dimensional, temperature-dependent magnetisation dynamics model, based on simultaneous evaluation of the stochastic Landau-Lifshitz-Bloch equation and heat flow equation, together with stochastic thermal fields and magnetoelastic contributions. The magnetisation switching probability is calculated as a function of stress magnitude and maximum heat pulse temperature. An operating region is identified, where magnetisation switching always occurs, with stress values ranging from 80 to 180 MPa, and maximum temperatures normalised to the Curie temperature ranging from 0.65 to 0.99. PMID:28841185

Heat-Assisted Multiferroic Solid-State Memory.

PubMed

Lepadatu, Serban; Vopson, Melvin M

2017-08-25

A heat-assisted multiferroic solid-state memory design is proposed and analysed, based on a PbNbZrSnTiO₃ antiferroelectric layer and Ni 81 Fe 19 magnetic free layer. Information is stored as magnetisation direction in the free layer of a magnetic tunnel junction element. The bit writing process is contactless and relies on triggering thermally activated magnetisation switching of the free layer towards a strain-induced anisotropy easy axis. A stress is generated using the antiferroelectric layer by voltage-induced antiferroelectric to ferroelectric phase change, and this is transmitted to the magnetic free layer by strain-mediated coupling. The thermally activated strain-induced magnetisation switching is analysed here using a three-dimensional, temperature-dependent magnetisation dynamics model, based on simultaneous evaluation of the stochastic Landau-Lifshitz-Bloch equation and heat flow equation, together with stochastic thermal fields and magnetoelastic contributions. The magnetisation switching probability is calculated as a function of stress magnitude and maximum heat pulse temperature. An operating region is identified, where magnetisation switching always occurs, with stress values ranging from 80 to 180 MPa, and maximum temperatures normalised to the Curie temperature ranging from 0.65 to 0.99.

Buffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctions

NASA Astrophysics Data System (ADS)

Sun, Mingling; Kubota, Takahide; Takahashi, Shigeki; Kawato, Yoshiaki; Sonobe, Yoshiaki; Takanashi, Koki

2018-05-01

Buffer layer dependence of tunnel magnetoresistance (TMR) effects was investigated in Co2Fe0.4Mn0.6Si (CFMS)/MgO/Co50Fe50 magnetic tunnel junctions (MTJs). Pd, Ru and Cr were selected for the buffer layer materials, and MTJs with three different CFMS thicknesses (30, 5, and 0.8 nm) were fabricated. A maximum TMR ratio of 136% was observed in the Ru buffer layer sample with a 30-nm-thick CFMS layer. TMR ratios drastically degraded for the CFMS thickness of 0.8 nm, and the values were 26% for Cr buffer layer and less than 1% for Pd and Ru buffer layers. From the annealing temperature dependence of the TMR ratios, amounts of interdiffusion and effects from the lattice mismatch were discussed.

p-MOSFET total dose dosimeter

NASA Technical Reports Server (NTRS)

Buehler, Martin G. (Inventor); Blaes, Brent R. (Inventor)

1994-01-01

A p-MOSFET total dose dosimeter where the gate voltage is proportional to the incident radiation dose. It is configured in an n-WELL of a p-BODY substrate. It is operated in the saturation region which is ensured by connecting the gate to the drain. The n-well is connected to zero bias. Current flow from source to drain, rather than from peripheral leakage, is ensured by configuring the device as an edgeless MOSFET where the source completely surrounds the drain. The drain junction is the only junction not connected to zero bias. The MOSFET is connected as part of the feedback loop of an operational amplifier. The operational amplifier holds the drain current fixed at a level which minimizes temperature dependence and also fixes the drain voltage. The sensitivity to radiation is made maximum by operating the MOSFET in the OFF state during radiation soak.

High-Tc SNS Junctions: A New Generation of Proximity-Coupled Josephson Devices

NASA Technical Reports Server (NTRS)

Kleinsasser, A. W.

1997-01-01

This paper reviews this evolution of proximity - coupled Josephson jucntion from the early investigations on low temperature superconductor-normal -superconductor junctions through the introduction of hybrid superconductor-semiconductor devices and the resulting interest in mesoscopic Josephson junctions, to the recent development of high temperature devices.

Enhanced conductivity of tunnel junctions employing semimetallic nanoparticles through variation in growth temperature and deposition

NASA Astrophysics Data System (ADS)

Nair, Hari P.; Crook, Adam M.; Bank, Seth R.

2010-05-01

We report ErAs nanoparticle-enhanced tunnel junctions grown on GaAs with low specific resistances (<2×10-4 Ω cm-2), approximately tenfold lower than previous reports. A reduction in specific resistance was achieved by modifying the ErAs nanoparticle morphology through the molecular beam epitaxial growth conditions, particularly lower growth temperatures. A further investigation of the variation in tunnel junction resistance with the amount of ErAs deposited and growth temperature shows that nanoparticle surface coverage may not be the only factor determining tunnel junction resistance.

Critical current oscillations of elliptical Josephson junctions with single-domain ferromagnetic layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Glick, Joseph A.; Khasawneh, Mazin A.; Niedzielski, Bethany M.

We report that josephson junctions containing ferromagnetic layers are of considerable interest for the development of practical cryogenic memory and superconducting qubits. Such junctions exhibit a ground-state phase shift of π for certain ranges of ferromagnetic layer thicknesses. We present studies of Nb based micron-scale elliptically shaped Josephson junctions containing ferromagnetic barriers of Ni 81Fe 19 or Ni 65Fe 15Co 20. By applying an external magnetic field, the critical current of the junctions is found to follow characteristic Fraunhofer patterns and display sharp switching behavior suggestive of single-domain magnets. The high quality of the Fraunhofer patterns enables us to extractmore » the maximum value of the critical current even when the peak is shifted significantly outside the range of the data due to the magnetic moment of the ferromagnetic layer. The maximum value of the critical current oscillates as a function of the ferromagnetic barrier thickness, indicating transitions in the phase difference across the junction between values of zero and π. Lastly, we compare the data to previous work and to models of the 0-π transitions based on existing theories.« less

Critical current oscillations of elliptical Josephson junctions with single-domain ferromagnetic layers

DOE PAGES

Glick, Joseph A.; Khasawneh, Mazin A.; Niedzielski, Bethany M.; ...

2017-10-06

We report that josephson junctions containing ferromagnetic layers are of considerable interest for the development of practical cryogenic memory and superconducting qubits. Such junctions exhibit a ground-state phase shift of π for certain ranges of ferromagnetic layer thicknesses. We present studies of Nb based micron-scale elliptically shaped Josephson junctions containing ferromagnetic barriers of Ni 81Fe 19 or Ni 65Fe 15Co 20. By applying an external magnetic field, the critical current of the junctions is found to follow characteristic Fraunhofer patterns and display sharp switching behavior suggestive of single-domain magnets. The high quality of the Fraunhofer patterns enables us to extractmore » the maximum value of the critical current even when the peak is shifted significantly outside the range of the data due to the magnetic moment of the ferromagnetic layer. The maximum value of the critical current oscillates as a function of the ferromagnetic barrier thickness, indicating transitions in the phase difference across the junction between values of zero and π. Lastly, we compare the data to previous work and to models of the 0-π transitions based on existing theories.« less

Short Ballistic Josephson Coupling in Planar Graphene Junctions with Inhomogeneous Carrier Doping

NASA Astrophysics Data System (ADS)

Park, Jinho; Lee, Jae Hyeong; Lee, Gil-Ho; Takane, Yositake; Imura, Ken-Ichiro; Taniguchi, Takashi; Watanabe, Kenji; Lee, Hu-Jong

2018-02-01

We report on short ballistic (SB) Josephson coupling in junctions embedded in a planar heterostructure of graphene. Ballistic Josephson coupling is confirmed by the Fabry-Perot-type interference of the junction critical current Ic . The product of Ic and the normal-state junction resistance RN , normalized by the zero-temperature gap energy Δ0 of the superconducting electrodes, turns out to be exceptionally large close to 2, an indication of strong Josephson coupling in the SB junction limit. However, Ic shows a temperature dependence that is inconsistent with the conventional short-junction-like behavior based on the standard Kulik-Omel'yanchuk prediction. We argue that this feature stems from the effects of inhomogeneous carrier doping in graphene near the superconducting contacts, although the junction is in fact in the short-junction limit.

Maximizing ion current rectification in a bipolar conical nanopore fluidic diode using optimum junction location.

PubMed

Singh, Kunwar Pal

2016-10-12

The ion current rectification has been obtained as a function of the location of a heterojunction in a bipolar conical nanopore fluidic diode for different parameters to determine the junction location for maximum ion current rectification using numerical simulations. Forward current peaks for a specific location of the junction and reverse current decreases with the junction location due to a change in ion enrichment/depletion in the pore. The optimum location of the heterojunction shifts towards the tip with base/tip diameter and surface charge density, and towards the base with the electrolyte concentration. The optimum location of the heterojunction has been approximated by an equation as a function of pore length, base/tip diameter, surface charge density and electrolyte concentration. The study is useful to design a rectifier with maximum ion current rectification for practical purposes.

Intercellular ice propagation: experimental evidence for ice growth through membrane pores.

PubMed Central

Acker, J P; Elliott, J A; McGann, L E

2001-01-01

Propagation of intracellular ice between cells significantly increases the prevalence of intracellular ice in confluent monolayers and tissues. It has been proposed that gap junctions facilitate ice propagation between cells. This study develops an equation for capillary freezing-point depression to determine the effect of temperature on the equilibrium radius of an ice crystal sufficiently small to grow through gap junctions. Convection cryomicroscopy and video image analysis were used to examine the incidence and pattern of intracellular ice formation (IIF) in the confluent monolayers of cell lines that do (MDCK) and do not (V-79W) form gap junctions. The effect of gap junctions on intracellular ice propagation was strongly temperature-dependent. For cells with gap junctions, IIF occurred in a directed wave-like pattern in 100% of the cells below -3 degrees C. At temperatures above -3 degrees C, there was a marked drop in the incidence of IIF, with isolated individual cells initially freezing randomly throughout the sample. This random pattern of IIF was also observed in the V-79W monolayers and in MDCK monolayers treated to prevent gap junction formation. The significant change in the low temperature behavior of confluent MDCK monolayers at -3 degrees C is likely the result of the inhibition of gap junction-facilitated ice propagation, and supports the theory that gap junctions facilitate ice nucleation between cells. PMID:11509353

Fabrication of Josephson Junction without shadow evaporation

NASA Astrophysics Data System (ADS)

Wu, Xian; Ku, Hsiangsheng; Long, Junling; Pappas, David

We developed a new method of fabricating Josephson Junction (Al/AlOX/Al) without shadow evaporation. Statistics from room temperature junction resistance and measurement of qubits are presented. Unlike the traditional ``Dolan Bridge'' technique, this method requires two individual lithographies and straight evaporations of Al. Argon RF plasma is used to remove native AlOX after the first evaporation, followed by oxidation and second Al evaporation. Junction resistance measured at room temperature shows linear dependence on Pox (oxidation pressure), √{tox} (oxidation time), and inverse proportional to junction area. We have seen 100% yield of qubits made with this method. This method is promising because it eliminates angle dependence during Junction fabrication, facilitates large scale qubits fabrication.

Towards improved photovoltaic conversion using dilute magnetic semiconductors (abstract only)

NASA Astrophysics Data System (ADS)

Olsson, Pär; Guillemoles, J.-F.; Domain, C.

2008-02-01

Present photovoltaic devices, based on p/n junctions, are limited from first principles to maximal efficiencies of 31% (40% under full solar concentration; Shockley and Queisser 1961 J. Appl. Phys. 32 510). However, more innovative schemes may overcome the Shockley-Queisser limit since the theoretical maximal efficiency of solar energy conversion is higher than 85% (Harder and Würfel 2003 Semicond. Sci. Technol. 18 S151). To date, the only practical realization of such an innovative scheme has been multi-junction devices, which at present hold the world record for efficiency at nearly 41% at significant solar concentration (US DOE news site: http://www.energy.gov/news/4503.htm). It has been proposed that one could make use of the solar spectrum in much the same way as the multi-junction devices do but in a single cell, using impurity induced intermediate levels to create gaps of different sizes. This intermediate level semiconductor (ILSC) concept (Green and Wenham 1994 Appl. Phys. Lett. 65 2907; Luque and Martí1997 Phys. Rev. Lett. 78 5014) has a maximal efficiency similar to that of multi-junction devices but suffers from prohibitively large non-radiative recombination rates. We here propose to use a ferromagnetic impurity scheme in order to reduce the non-radiative recombination rates while maintaining the high theoretical maximum efficiency of the ILSC scheme, that is about 46%. Using density functional theory calculations, the electronic and energetic properties of transition metal impurities for a wide range of semiconductors have been analysed. Of the several hundred compounds studied, only a few fulfil the design criteria that we present here. As an example, wide gap AlP is one of the most promising compounds. It was found that inclusion of significant amounts of Mn in AlP induces band structures providing conversion efficiencies potentially close to the theoretical maximum, with an estimated Curie temperature reaching above 100 K.

Real-space microscopic electrical imaging of n+-p junction beneath front-side Ag contact of multicrystalline Si solar cells

NASA Astrophysics Data System (ADS)

Jiang, C.-S.; Li, Z. G.; Moutinho, H. R.; Liang, L.; Ionkin, A.; Al-Jassim, M. M.

2012-04-01

We investigated the quality of the n+-p diffused junction beneath the front-side Ag contact of multicrystalline Si solar cells by characterizing the uniformities of electrostatic potential and doping concentration across the junction using the atomic force microscopy-based electrical imaging techniques of scanning Kelvin probe force microscopy and scanning capacitance microscopy. We found that Ag screen-printing metallization fired at the over-fire temperature significantly degrades the junction uniformity beneath the Ag contact grid, whereas metallization at the optimal- and under-fire temperatures does not cause degradation. Ag crystallites with widely distributed sizes were found at the Ag-grid/emitter-Si interface of the over-fired cell, which is associated with the junction damage beneath the Ag grid. Large crystallites protrude into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent re-crystallization with incorporation of Ag and other impurities and with formation of crystallographic defects during quenching. The effect of this junction damage on solar cell performance is discussed.

Real-Space Microscopic Electrical Imaging of n+-p Junction Beneath Front-Side Ag Contact of Multicrystalline Si Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, C. S.; Li, Z. G.; Moutinho, H. R.

2012-04-15

We investigated the quality of the n+-p diffused junction beneath the front-side Ag contact of multicrystalline Si solar cells by characterizing the uniformities of electrostatic potential and doping concentration across the junction using the atomic force microscopy-based electrical imaging techniques of scanning Kelvin probe force microscopy and scanning capacitance microscopy. We found that Ag screen-printing metallization fired at the over-fire temperature significantly degrades the junction uniformity beneath the Ag contact grid, whereas metallization at the optimal- and under-fire temperatures does not cause degradation. Ag crystallites with widely distributed sizes were found at the Ag-grid/emitter-Si interface of the over-fired cell, whichmore » is associated with the junction damage beneath the Ag grid. Large crystallites protrude into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent re-crystallization with incorporation of Ag and other impurities and with formation of crystallographic defects during quenching. The effect of this junction damage on solar cell performance is discussed.« less

Influence of MoOx interlayer on the maximum achievable open-circuit voltage in organic photovoltaic cells

NASA Astrophysics Data System (ADS)

Zou, Yunlong; Holmes, Russell

2013-03-01

Transition metal oxides including molybdenum oxide (MoOx) are characterized by large work functions and deep energy levels relative to the organic semiconductors used in photovoltaic cells (OPVs). These materials have been used in OPVs as interlayers between the indium-tin-oxide anode and the active layers to increase the open-circuit voltage (VOC) and power conversion efficiency. We examine the role of MoOx in determining the maximum achievable VOC in planar heterojunction OPVs based on the donor-acceptor pairing of boron subphthalocyanine chloride (SubPc) and C60. While causing minor changes in VOC at room temperature, the inclusion of MoOx significantly changes the temperature dependence of VOC. Devices containing no interlayer show a maximum VOC\\ of 1.2 V, while devices containing MoOx show no saturation in VOC, reaching a value of >1.4 V at 110 K. We propose that the MoOx-SubPc interface forms a dissociating Schottky junction that provides an additional contribution to VOC at low temperature. Separate measurements of photoluminescence confirm that excitons in SubPc can be quenched by MoOx. Charge transfer at this interface is by hole extraction from SubPc to MoOx, and this mechanism favors donors with a deep highest occupied molecular orbital (HOMO) energy level. Consistent with this expectation, the temperature dependence of VOC for devices constructed using a donor with a shallower HOMO level, e.g. copper phthalocyanine, is independent of the presence of MoOx.

Temperature- and Bias-Dependence of Magnetoresistance in Doped Manganite Thin Film Trilayer Junctions

NASA Astrophysics Data System (ADS)

Sun, J. Z.; Xiao, Gang

1998-03-01

Large low-field magnetoresistance, up to a factor of five change in resistance, was observed in trilayer junctions formed by epitaxial thin films of La_0.67Sr_0.33 MnO3 - SrTiO3 - La_0.67Sr_0.33MnO3 at 4.2K and 100 Oe. Such magnetoresistance decreases with increasing sample temperature, and disappears for temperatures above 150K. The magnetoresistance also decreases upon increasing bias voltage across the junction. We present systematic experimental studies of both temperature and bias-dependence. These results in manganite trilayer junctions at low temperatures are similar to what has been observed in metallic trilayer magnetic tunneling valves, and are qualitatively consistent with the interface magnon excitation model proposed by Zhang et al.(S. Zhang, P. M. Levy, A. C. Marley and S. S. P. Parkin, Phys. Rev. Lett. 79), 3744 (1997).

Spin and charge thermopower effects in the ferromagnetic graphene junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vahedi, Javad, E-mail: javahedi@gmail.com; Center for Theoretical Physics of Complex Systems, Institute for Basic Science; Barimani, Fattaneh

2016-08-28

Using wave function matching approach and employing the Landauer-Buttiker formula, a ferromagnetic graphene junction with temperature gradient across the system is studied. We calculate the thermally induced charge and spin current as well as the thermoelectric voltage (Seebeck effect) in the linear and nonlinear regimes. Our calculation revealed that due to the electron-hole symmetry, the charge Seebeck coefficient is, for an undoped magnetic graphene, an odd function of chemical potential while the spin Seebeck coefficient is an even function regardless of the temperature gradient and junction length. We have also found with an accurate tuning external parameter, namely, the exchangemore » filed and gate voltage, the temperature gradient across the junction drives a pure spin current without accompanying the charge current. Another important characteristic of thermoelectric transport, thermally induced current in the nonlinear regime, is examined. It would be our main finding that with increasing thermal gradient applied to the junction the spin and charge thermovoltages decrease and even become zero for non zero temperature bias.« less

Investigations on rectifying behavior of Y{sub 0.95}Ca{sub 0.05}MnO{sub 3}/Si junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dhruv, Davit; V.V.P. Engineering College, Gujarat Technological University, Rajkot – 360 005; Joshi, Zalak

2016-05-06

In this communication, we report the rectifying properties observed across the junction, consists of Ca{sup +2} doped hexagonal YMnO{sub 3} manganite film, grown on n-type (100) Si single crystalline substrate. The junction was grown using cost effective chemical solution deposition (CSD) technique by employing spin coating method. Surface morphology of Y{sub 0.9}5Ca{sub 0.05}MnO{sub 3}/Si (YCMO/Si) film was carried out by atomic force microscopy and magnetic response of film was studied by magnetic force microscopy. Current – voltage characteristics of the junction was carried out by using Keithley source meter in current perpendicular to plane (CPP) mode at different temperatures. Rectificationmore » in I – V behavior has been observed for the junction at all the temperatures studied. With increase in temperature, rectification ratio, in the range of 10{sup 4}, increases across the junction. Results have been discussed in the context of thermal effects.« less

A single-gradient junction technique to replace multiple-junction shifts for craniospinal irradiation treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hadley, Austin; Ding, George X., E-mail: george.ding@vanderbilt.edu

2014-01-01

Craniospinal irradiation (CSI) requires abutting fields at the cervical spine. Junction shifts are conventionally used to prevent setup error–induced overdosage/underdosage from occurring at the same location. This study compared the dosimetric differences at the cranial-spinal junction between a single-gradient junction technique and conventional multiple-junction shifts and evaluated the effect of setup errors on the dose distributions between both techniques for a treatment course and single fraction. Conventionally, 2 lateral brain fields and a posterior spine field(s) are used for CSI with weekly 1-cm junction shifts. We retrospectively replanned 4 CSI patients using a single-gradient junction between the lateral brain fieldsmore » and the posterior spine field. The fields were extended to allow a minimum 3-cm field overlap. The dose gradient at the junction was achieved using dose painting and intensity-modulated radiation therapy planning. The effect of positioning setup errors on the dose distributions for both techniques was simulated by applying shifts of ± 3 and 5 mm. The resulting cervical spine doses across the field junction for both techniques were calculated and compared. Dose profiles were obtained for both a single fraction and entire treatment course to include the effects of the conventional weekly junction shifts. Compared with the conventional technique, the gradient-dose technique resulted in higher dose uniformity and conformity to the target volumes, lower organ at risk (OAR) mean and maximum doses, and diminished hot spots from systematic positioning errors over the course of treatment. Single-fraction hot and cold spots were improved for the gradient-dose technique. The single-gradient junction technique provides improved conformity, dose uniformity, diminished hot spots, lower OAR mean and maximum dose, and one plan for the entire treatment course, which reduces the potential human error associated with conventional 4-shifted plans.« less

Junction-to-Case Thermal Resistance of a Silicon Carbide Bipolar Junction Transistor Measured

NASA Technical Reports Server (NTRS)

Niedra, Janis M.

2006-01-01

Junction temperature of a prototype SiC-based bipolar junction transistor (BJT) was estimated by using the base-emitter voltage (V(sub BE)) characteristic for thermometry. The V(sub BE) was measured as a function of the base current (I(sub B)) at selected temperatures (T), all at a fixed collector current (I(sub C)) and under very low duty cycle pulse conditions. Under such conditions, the average temperature of the chip was taken to be the same as that of the temperature-controlled case. At increased duty cycle such as to substantially heat the chip, but same I(sub C) pulse height, the chip temperature was identified by matching the V(sub BE) to the thermometry curves. From the measured average power, the chip-to-case thermal resistance could be estimated, giving a reasonable value. A tentative explanation for an observed bunching with increasing temperature of the calibration curves may relate to an increasing dopant atom ionization. A first-cut analysis, however, does not support this.

Thermal dosimetry analysis combined with patient-specific thermal modeling of clinical interstitial ultrasound hyperthermia integrated within HDR brachytherapy for treatment of locally advanced prostate cancer

NASA Astrophysics Data System (ADS)

Salgaonkar, Vasant A.; Wootton, Jeff; Prakash, Punit; Scott, Serena; Hsu, I. C.; Diederich, Chris J.

2017-03-01

This study presents thermal dosimetry analysis from clinical treatments where ultrasound hyperthermia (HT) was administered following high-dose rate (HDR) brachytherapy treatment for locally advanced prostate cancer as part of a clinical pilot study. HT was administered using ultrasound applicators from within multiple 13-g brachytherapy catheters implanted along the posterior periphery of the prostate. The heating applicators were linear arrays of sectored tubular transducers (˜7 MHz), with independently powered array elements enabling energy deposition with 3D spatial control. Typical heat treatments employed time-averaged peak acoustic intensities of 1 - 3 W/cm2 and lasted for 60 - 70 minutes. Throughout the treatments, temperatures at multiple points were monitored using multi-junction thermocouples, placed within available brachytherapy catheters throughout mid-gland prostate and identified as the hyperthermia target volume (HTV). Clinical constraints allowed placement of 8 - 12 thermocouple sensors in the HTV and patient-specific 3D thermal modeling based on finite element methods (FEM) was used to supplement limited thermometry. Patient anatomy, heating device positions, orientations, and thermometry junction locations were obtained from patient CT scans and HDR and hyperthermia planning software. The numerical models utilized the applied power levels recorded during the treatments. Tissue properties such as perfusion and acoustic absorption were varied within physiological ranges such that squared-errors between measured and simulated temperatures were minimized. This data-fitting was utilized for 6 HT treatments to estimate volumetric temperature distributions achieved in the HTV and surrounding anatomy devoid of thermocouples. For these treatments, the measured and simulated T50 values in the hyperthermia target volume (HTV) were between 40.1 - 43.9 °C and 40.3 - 44.9 °C, respectively. Maximum temperatures between 46.8 - 49.8 °C were measured during these treatments and the corresponding range obtained from simulation was 47.3 - 51.1 °C. Based on the simulations, the maximum temperatures in the bladder and the rectum were below 41.7 °C and 41.1 °C, respectively.

Spatial inhomogeneous barrier heights at graphene/semiconductor Schottky junctions

NASA Astrophysics Data System (ADS)

Tomer, Dushyant

Graphene, a semimetal with linear energy dispersion, forms Schottky junction when interfaced with a semiconductor. This dissertation presents temperature dependent current-voltage and scanning tunneling microscopy/spectroscopy (STM/S) measurements performed on graphene Schottky junctions formed with both three and two dimensional semiconductors. To fabricate Schottky junctions, we transfer chemical vapor deposited monolayer graphene onto Si- and C-face SiC, Si, GaAs and MoS2 semiconducting substrates using polymer assisted chemical method. We observe three main type of intrinsic spatial inhomogeneities, graphene ripples, ridges and semiconductor steps in STM imaging that can exist at graphene/semiconductor junctions. Tunneling spectroscopy measurements reveal fluctuations in graphene Dirac point position, which is directly related to the Schottky barrier height. We find a direct correlation of Dirac point variation with the topographic undulations of graphene ripples at the graphene/SiC junction. However, no such correlation is established at graphene/Si and Graphene/GaAs junctions and Dirac point variations are attributed to surface states and trapped charges at the interface. In addition to graphene ripples and ridges, we also observe atomic scale moire patterns at graphene/MoS2 junction due to van der Waals interaction at the interface. Periodic topographic modulations due to moire pattern do not lead to local variation in graphene Dirac point, indicating that moire pattern does not contribute to fluctuations in electronic properties of the heterojunction. We perform temperature dependent current-voltage measurements to investigate the impact of topographic inhomogeneities on electrical properties of the Schottky junctions. We observe temperature dependence in junction parameters, such as Schottky barrier height and ideality factor, for all types of Schottky junctions in forward bias measurements. Standard thermionic emission theory which assumes a perfect smooth interface fails to explain such behavior, hence, we apply a modified emission theory with Gaussian distribution of Schottky barrier heights. The modified theory, applicable to inhomogeneous interfaces, explains the temperature dependent behavior of our Schottky junctions and gives a temperature independent mean barrier height. We attribute the inhomogeneous barrier height to the presence of graphene ripples and ridges in case of SiC and MoS2 while surface states and trapped charges at the interface is dominating in Si and GaAs. Additionally, we observe bias dependent current and barrier height in reverse bias regime also for all Schottky junctions. To explain such behavior, we consider two types of reverse bias conduction mechanisms; Poole-Frenkel and Schottky emission. We find that Poole-Frenkel emission explains the characteristics of graphene/SiC junctions very well. However, both the mechanism fails to interpret the behavior of graphene/Si and graphene/GaAs Schottky junctions. These findings provide insight into the fundamental physics at the interface of graphene/semiconductor junctions.

Improved High/Low Junction Silicon Solar Cell

NASA Technical Reports Server (NTRS)

Neugroschel, A.; Pao, S. C.; Lindholm, F. A.; Fossum, J. G.

1986-01-01

Method developed to raise value of open-circuit voltage in silicon solar cells by incorporating high/low junction in cell emitter. Power-conversion efficiency of low-resistivity silicon solar cell considerably less than maximum theoretical value mainly because open-circuit voltage is smaller than simple p/n junction theory predicts. With this method, air-mass-zero opencircuit voltage increased from 600 mV level to approximately 650 mV.

Energy-filtered cold electron transport at room temperature.

PubMed

Bhadrachalam, Pradeep; Subramanian, Ramkumar; Ray, Vishva; Ma, Liang-Chieh; Wang, Weichao; Kim, Jiyoung; Cho, Kyeongjae; Koh, Seong Jin

2014-09-10

Fermi-Dirac electron thermal excitation is an intrinsic phenomenon that limits functionality of various electron systems. Efforts to manipulate electron thermal excitation have been successful when the entire system is cooled to cryogenic temperatures, typically <1 K. Here we show that electron thermal excitation can be effectively suppressed at room temperature, and energy-suppressed electrons, whose energy distribution corresponds to an effective electron temperature of ~45 K, can be transported throughout device components without external cooling. This is accomplished using a discrete level of a quantum well, which filters out thermally excited electrons and permits only energy-suppressed electrons to participate in electron transport. The quantum well (~2 nm of Cr2O3) is formed between source (Cr) and tunnelling barrier (SiO2) in a double-barrier-tunnelling-junction structure having a quantum dot as the central island. Cold electron transport is detected from extremely narrow differential conductance peaks in electron tunnelling through CdSe quantum dots, with full widths at half maximum of only ~15 mV at room temperature.

Thermal analysis of the intact mandibular premolar: a finite element analysis.

PubMed

Oskui, I Z; Ashtiani, M N; Hashemi, A; Jafarzadeh, H

2013-09-01

To obtain temperature distribution data through human teeth focusing on the pulp-dentine junction (PDJ). A three-dimensional tooth model was reconstructed using computer-aided design software from computed tomographic images. Subsequently, temperature distribution was numerically determined through the tooth for three different heat loads. Loading type I was equivalent to a 60° C mouth temperature for 1 s. Loading type II started with a 60° C mouth temperature, decreasing linearly to 37° C over 10 s. Loading type III repeated the pattern of type II in three consecutive cycles, with a 5 s resting time between cycles. The maximum temperatures of the pulp were 37.9° C, 39.0° C and 41.2° C for loading types I, II, and III, respectively. The largest temperature rise occurred with the cyclic loading, that is, type III. For the heat loads considered, the predicted peak temperatures at the PDJ were less than the reported temperature thresholds of irreversible pulpal damage. © 2013 International Endodontic Journal. Published by John Wiley & Sons Ltd.

White LED performance

NASA Astrophysics Data System (ADS)

Gu, Yimin; Narendran, Nadarajah; Freyssinier, Jean Paul

2004-10-01

Two life tests were conducted to compare the effects of drive current and ambient temperature on the degradation rate of 5 mm and high-flux white LEDs. Tests of 5 mm white LED arrays showed that junction temperature increases produced by drive current had a greater effect on the rate of light output degradation than junction temperature increases from ambient heat. A preliminary test of high-flux white LEDs showed the opposite effect, with junction temperature increases from ambient heat leading to a faster depreciation. However, a second life test is necessary to verify this finding. The dissimilarity in temperature effect among 5 mm and high-flux LEDs is likely caused by packaging differences between the two device types.

InP tunnel junction for InGaAs/InP tandem solar cells

NASA Technical Reports Server (NTRS)

Vilela, M. F.; Freundlich, A.; Bensaoula, A.; Medelci, N.; Renaud, P.

1995-01-01

Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting minimal doping cross diffusion in the narrow space-charge region (approximately 1-5 nm) of the device. The fabrication of tandem devices using InP tunnel diodes as interconnect is in progress and will be reported at the conference.

Single-contact tunneling thermometry

DOEpatents

Maksymovych, Petro

2016-02-23

A single-contact tunneling thermometry circuit includes a tunnel junction formed between two objects. Junction temperature gradient information is determined based on a mathematical relationship between a target alternating voltage applied across the junction and the junction temperature gradient. Total voltage measured across the junction indicates the magnitude of the target alternating voltage. A thermal gradient is induced across the junction. A reference thermovoltage is measured when zero alternating voltage is applied across the junction. An increasing alternating voltage is applied while measuring a thermovoltage component and a DC rectification voltage component created by the applied alternating voltage. The target alternating voltage is reached when the thermovoltage is nullified or doubled by the DC rectification voltage depending on the sign of the reference thermovoltage. Thermoelectric current and current measurements may be utilized in place of the thermovoltage and voltage measurements. The system may be automated with a feedback loop.

Heat Transfer Behavior across the Dentino-Enamel Junction in the Human Tooth

PubMed Central

Niu, Lin; Dong, Shao-Jie; Kong, Ting-Ting; Wang, Rong; Zou, Rui; Liu, Qi-Da

2016-01-01

During eating, the teeth usually endure the sharply temperature changes because of different foods. It is of importance to investigate the heat transfer and heat dissipation behavior of the dentino–enamel junction (DEJ) of human tooth since dentine and enamel have different thermophysical properties. The spatial and temporal temperature distributions on the enamel, dentine, and pulpal chamber of both the human tooth and its discontinuous boundaries, were measured using infrared thermography using a stepped temperature increase on the outer boundary of enamel crowns. The thermal diffusivities for enamel and dentine were deduced from the time dependent temperature change at the enamel and dentine layers. The thermal conductivities for enamel and dentine were calculated to be 0.81 Wm-1K-1 and 0.48 Wm-1K-1 respectively. The observed temperature discontinuities across the interfaces between enamel, dentine and pulp-chamber layers were due to the difference of thermal conductivities at interfaces rather than to the phase transformation. The temperature gradient distributes continuously across the enamel and dentine layers and their junction below a temperature of 42°C, whilst a negative thermal resistance is observed at interfaces above 42°C. These results suggest that the microstructure of the dentin-enamel junction (DEJ) junction play an important role in tooth heat transfer and protects the pulp from heat damage. PMID:27662186

Heat Transfer Behavior across the Dentino-Enamel Junction in the Human Tooth.

PubMed

Niu, Lin; Dong, Shao-Jie; Kong, Ting-Ting; Wang, Rong; Zou, Rui; Liu, Qi-Da

During eating, the teeth usually endure the sharply temperature changes because of different foods. It is of importance to investigate the heat transfer and heat dissipation behavior of the dentino-enamel junction (DEJ) of human tooth since dentine and enamel have different thermophysical properties. The spatial and temporal temperature distributions on the enamel, dentine, and pulpal chamber of both the human tooth and its discontinuous boundaries, were measured using infrared thermography using a stepped temperature increase on the outer boundary of enamel crowns. The thermal diffusivities for enamel and dentine were deduced from the time dependent temperature change at the enamel and dentine layers. The thermal conductivities for enamel and dentine were calculated to be 0.81 Wm-1K-1 and 0.48 Wm-1K-1 respectively. The observed temperature discontinuities across the interfaces between enamel, dentine and pulp-chamber layers were due to the difference of thermal conductivities at interfaces rather than to the phase transformation. The temperature gradient distributes continuously across the enamel and dentine layers and their junction below a temperature of 42°C, whilst a negative thermal resistance is observed at interfaces above 42°C. These results suggest that the microstructure of the dentin-enamel junction (DEJ) junction play an important role in tooth heat transfer and protects the pulp from heat damage.

High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires.

PubMed

Ganjipour, Bahram; Dey, Anil W; Borg, B Mattias; Ek, Martin; Pistol, Mats-Erik; Dick, Kimberly A; Wernersson, Lars-Erik; Thelander, Claes

2011-10-12

We present electrical characterization of broken gap GaSb-InAsSb nanowire heterojunctions. Esaki diode characteristics with maximum reverse current of 1750 kA/cm(2) at 0.50 V, maximum peak current of 67 kA/cm(2) at 0.11 V, and peak-to-valley ratio (PVR) of 2.1 are obtained at room temperature. The reverse current density is comparable to that of state-of-the-art tunnel diodes based on heavily doped p-n junctions. However, the GaSb-InAsSb diodes investigated in this work do not rely on heavy doping, which permits studies of transport mechanisms in simple transistor structures processed with high-κ gate dielectrics and top-gates. Such processing results in devices with improved PVR (3.5) and stability of the electrical properties.

Prototype thin-film thermocouple/heat-flux sensor for a ceramic-insulated diesel engine

NASA Technical Reports Server (NTRS)

Kim, Walter S.; Barrows, Richard F.

1988-01-01

A platinum versus platinum-13 percent rhodium thin-film thermocouple/heat-flux sensor was devised and tested in the harsh, high-temperature environment of a ceramic-insulated, low-heat-rejection diesel engine. The sensor probe assembly was developed to provide experimental validation of heat transfer and thermal analysis methodologies applicable to the insulated diesel engine concept. The thin-film thermocouple configuration was chosen to approximate an uninterrupted chamber surface and provide a 1-D heat-flux path through the probe body. The engine test was conducted by Purdue University for Integral Technologies, Inc., under a DOE-funded contract managed by NASA Lewis Research Center. The thin-film sensor performed reliably during 6 to 10 hr of repeated engine runs at indicated mean surface temperatures up to 950 K. However, the sensor suffered partial loss of adhesion in the thin-film thermocouple junction area following maximum cyclic temperature excursions to greater than 1150 K.

Silicon Carbide Diodes Characterization at High Temperature and Comparison With Silicon Devices

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry D., Jr.

2004-01-01

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers rated at 200, 300, 600, and 1200 V, were electrically tested and characterized as a function of temperature up to 300 C. Electrical tests included both steady state and dynamic tests. Steady state tests produced forward and reverse I-V characteristic curves. Transient tests evaluated the switching performance of the diodes in either a hard-switched DC to DC buck converter or a half-bridge boost converter. For evaluation and comparison purposes, the same tests were performed with current state-of-the-art ultra fast silicon (Si) pn-junction diodes of similar ratings and also a Si Schottky diode. The comparisons made were forward voltage drop at rated current, reverse current at rated voltage, and turn-off peak reverse recovery current and reverse recovery time. In addition, efficiency measurements were taken for the buck DC to DC converter using both the SiC Schottky diodes and the Si pn-junction diodes at different temperatures and frequencies. The test results showed that at high temperature, the forward voltage drop for SiC Schottky diodes is higher than the forward drop of the ultra fast Si pn-junction diodes. As the temperature increased, the forward voltage drop of the SiC Schottky increased while for the ultra fast Si pn-junction diodes, the forward voltage drop decreased as temperature increased. For the elevated temperature steady state reverse voltage tests, the SiC Schottky diodes showed low leakage current at their rated voltage. Likewise, for the transient tests, the SiC Schottky diodes displayed low reverse recovery currents over the range of temperatures tested. Conversely, the Si pn-junction diodes showed increasing peak reverse current values and reverse recovery times with increasing temperature. Efficiency measurements in the DC to DC buck converter showed the advantage of the SiC Schottky diodes over the ultra fast Si pn-junction diodes, especially at the higher temperatures and higher frequencies.

Sensor fabrication method for in situ temperature and humidity monitoring of light emitting diodes.

PubMed

Lee, Chi-Yuan; Su, Ay; Liu, Yin-Chieh; Chan, Pin-Cheng; Lin, Chia-Hung

2010-01-01

In this work micro temperature and humidity sensors are fabricated to measure the junction temperature and humidity of light emitting diodes (LED). The junction temperature is frequently measured using thermal resistance measurement technology. The weakness of this method is that the timing of data capture is not regulated by any standard. This investigation develops a device that can stably and continually measure temperature and humidity. The device is light-weight and can monitor junction temperature and humidity in real time. Using micro-electro-mechanical systems (MEMS), this study minimizes the size of the micro temperature and humidity sensors, which are constructed on a stainless steel foil substrate (40 μm-thick SS-304). The micro temperature and humidity sensors can be fixed between the LED chip and frame. The sensitivities of the micro temperature and humidity sensors are 0.06±0.005 (Ω/°C) and 0.033 pF/%RH, respectively.

Pair-breaking mechanisms in superconductor—normal-metal—superconductor junctions

NASA Astrophysics Data System (ADS)

Yang, H. C.; Finnemore, D. K.

1984-08-01

The critical current density Jc has been measured for superconductor—normal-metal—superconductor (S-N-S) junctions over a wide range of temperature and composition in order to determine the depairing effects of magnetic impurities. Junctions, which are in a sandwich geometry with the N layer typically 600 nm thick, show well-defined diffraction patterns indicating that the junctions are of high quality. Below 4.2 K, the temperature dependence of Jc is found to follow a modified bridge theory based on the work of Makeev et al.

Maximizing entanglement in bosonic Josephson junctions using shortcuts to adiabaticity and optimal control

NASA Astrophysics Data System (ADS)

Stefanatos, Dionisis; Paspalakis, Emmanuel

2018-05-01

In this article we consider a bosonic Josephson junction, a model system composed by two coupled nonlinear quantum oscillators which can be implemented in various physical contexts, initially prepared in a product of weakly populated coherent states. We quantify the maximum achievable entanglement between the modes of the junction and then use shortcuts to adiabaticity, a method developed to speed up adiabatic quantum dynamics, as well as numerical optimization, to find time-dependent controls (the nonlinearity and the coupling of the junction) which bring the system to a maximally entangled state.

Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

DOEpatents

Madan, A.

1984-12-10

A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

Forward voltage short-pulse technique for measuring high power laser array junction temperature

NASA Technical Reports Server (NTRS)

Meadows, Byron L. (Inventor); Amzajerdian, Frazin (Inventor); Barnes, Bruce W. (Inventor); Baker, Nathaniel R. (Inventor)

2012-01-01

The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.

Room temperature spin valve effect in NiFe/WS2/Co junctions

PubMed Central

Iqbal, Muhammad Zahir; Iqbal, Muhammad Waqas; Siddique, Salma; Khan, Muhammad Farooq; Ramay, Shahid Mahmood

2016-01-01

The two-dimensional (2D) layered electronic materials of transition metal dichalcogenides (TMDCs) have been recently proposed as an emerging canddiate for spintronic applications. Here, we report the exfoliated single layer WS2-intelayer based spin valve effect in NiFe/WS2/Co junction from room temperature to 4.2 K. The ratio of relative magnetoresistance in spin valve effect increases from 0.18% at room temperature to 0.47% at 4.2 K. We observed that the junction resistance decreases monotonically as temperature is lowered. These results revealed that semiconducting WS2 thin film works as a metallic conducting interlayer between NiFe and Co electrodes. PMID:26868638

Room temperature spin valve effect in NiFe/WS₂/Co junctions.

PubMed

Iqbal, Muhammad Zahir; Iqbal, Muhammad Waqas; Siddique, Salma; Khan, Muhammad Farooq; Ramay, Shahid Mahmood

2016-02-12

The two-dimensional (2D) layered electronic materials of transition metal dichalcogenides (TMDCs) have been recently proposed as an emerging canddiate for spintronic applications. Here, we report the exfoliated single layer WS2-intelayer based spin valve effect in NiFe/WS2/Co junction from room temperature to 4.2 K. The ratio of relative magnetoresistance in spin valve effect increases from 0.18% at room temperature to 0.47% at 4.2 K. We observed that the junction resistance decreases monotonically as temperature is lowered. These results revealed that semiconducting WS2 thin film works as a metallic conducting interlayer between NiFe and Co electrodes.

High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O

DOEpatents

Ginley, David S.; Hietala, Vincent M.; Hohenwarter, Gert K. G.; Martens, Jon S.; Plut, Thomas A.; Tigges, Chris P.; Vawter, Gregory A.; Zipperian, Thomas E.

1994-10-25

A process for formulating non-hysteretic and hysteretic Josephson junctions using HTS materials which results in junctions having the ability to operate at high temperatures while maintaining high uniformity and quality. The non-hysteretic Josephson junction is formed by step-etching a LaAlO.sub.3 crystal substrate and then depositing a thin film of TlCaBaCuO on the substrate, covering the step, and forming a grain boundary at the step and a subsequent Josephson junction. Once the non-hysteretic junction is formed the next step to form the hysteretic Josephson junction is to add capacitance to the system. In the current embodiment, this is accomplished by adding a thin dielectric layer, LaA1O.sub.3, followed by a cap layer of a normal metal where the cap layer is formed by first depositing a thin layer of titanium (Ti) followed by a layer of gold (Au). The dielectric layer and the normal metal cap are patterned to the desired geometry.

New PLAD apparatus and fabrication of epitaxial films and junctions of functional materials: SiC, GaN, ZnO, diamond and GMR layers

NASA Astrophysics Data System (ADS)

Muto, Hachizo; Kusumori, Takeshi; Nakamura, Toshiyuki; Asano, Takashi; Hori, Takahiro

2006-04-01

We have developed a new pulsed laser ablation-deposition (PLAD) apparatus and techniques for fabricating films of high-temperature or functional materials, including two short-wavelength lasers: (a) a YAG 5th harmonic (213 nm) and (b) Raman-shifted lasers containing vacuum ultraviolet light; also involved are (c) a high-temperature heater with a maximum temperature of 1350 °C, (d) dual-target simultaneous ablation mechanics, and (e) hybrid PLAD using a pico-second YAG laser combined with (c) and/or (d). Using the high-T heater, hetero-epitaxial films of 3C-, 2H- and 4H-SiC have been prepared on sapphire-c. In situ p-doping for GaN epitaxial films is achieved by simultaneous ablation of GaN and Mg targets by (d) during film growth. Junctions such as pGaN (Mg-doped)-film/n-SiC(0 0 0 1) substrate and pGaN/n-Si(1 1 1) show good diode characteristics. Epitaxial films with a diamond lattice can be grown on the sapphire-c plane by hybrid PLAD (e) with a high-T heater using a 6H-SiC target. High quality epitaxial films of ZnO are grown by PLAD by introducing a low-temperature self-buffer layer; magnetization of ferromagnetic materials is enforced by overlaying on a ferromagnetic lattice plane of an anti-ferromagnetic material, showing the value of the layer-overlaying method in improving quality. The short-wavelength lasers are useful in reducing surface particles on functional films, including superconductors.

Thermo-voltage measurements of atomic contacts at low temperature

PubMed Central

Ofarim, Ayelet; Kopp, Bastian; Möller, Thomas; Martin, León; Boneberg, Johannes; Leiderer, Paul

2016-01-01

Summary We report the development of a novel method to determine the thermopower of atomic-sized gold contacts at low temperature. For these measurements a mechanically controllable break junction (MCBJ) system is used and a laser source generates a temperature difference of a few kelvins across the junction to create a thermo-voltage. Since the temperature difference enters directly into the Seebeck coefficient S = −ΔV/ΔT, the determination of the temperature plays an important role. We present a method for the determination of the temperature difference using a combination of a finite element simulation, which reveals the temperature distribution of the sample, and the measurement of the resistance change due to laser heating of sensor leads on both sides next to the junction. Our results for the measured thermopower are in agreement with recent reports in the literature. PMID:27335765

Contact and Length Dependent Effects in Single-Molecule Electronics

NASA Astrophysics Data System (ADS)

Hines, Thomas

Understanding charge transport in single molecules covalently bonded to electrodes is a fundamental goal in the field of molecular electronics. In the past decade, it has become possible to measure charge transport on the single-molecule level using the STM break junction method. Measurements on the single-molecule level shed light on charge transport phenomena which would otherwise be obfuscated by ensemble measurements of groups of molecules. This thesis will discuss three projects carried out using STM break junction. In the first project, the transition between two different charge transport mechanisms is reported in a set of molecular wires. The shortest wires show highly length dependent and temperature invariant conductance behavior, whereas the longer wires show weakly length dependent and temperature dependent behavior. This trend is consistent with a model whereby conduction occurs by coherent tunneling in the shortest wires and by incoherent hopping in the longer wires. Measurements are supported with calculations and the evolution of the molecular junction during the pulling process is investigated. The second project reports controlling the formation of single-molecule junctions by means of electrochemically reducing two axial-diazonium terminal groups on a molecule, thereby producing direct Au-C covalent bonds in-situ between the molecule and gold electrodes. Step length analysis shows that the molecular junction is significantly more stable, and can be pulled over a longer distance than a comparable junction created with amine anchoring bonds. The stability of the junction is explained by the calculated lower binding energy associated with the direct Au-C bond compared with the Au-N bond. Finally, the third project investigates the role that molecular conformation plays in the conductance of oligothiophene single-molecule junctions. Ethyl substituted oligothiophenes were measured and found to exhibit temperature dependent conductance and transition voltage for molecules with between two and six repeat units. While the molecule with only one repeat unit shows temperature invariant behavior. Density functional theory calculations show that at higher temperatures the oligomers with multiple repeat units assume a more planar conformation, which increases the conjugation length and decreases the effective energy barrier of the junction.

Effects of long-term self-massage at the musculotendinous junction on hamstring extensibility, stiffness, stretch tolerance, and structural indices: A randomized controlled trial.

PubMed

Akazawa, Naoki; Okawa, Naomi; Kishi, Masaki; Nakatani, Kiyoshi; Nishikawa, Katsuya; Tokumura, Daichi; Matsui, Yuji; Moriyama, Hideki

2016-09-01

The purpose of this study was to examine the effect of long-term self-massage at the musculotendinous junction on hamstring extensibility, stiffness, stretch tolerance, and structural indices. Single-blind, randomized, controlled trial. Laboratory. Thirty-seven healthy men. The right or left leg of each participant was randomly assigned to the massage group, and the other leg was assigned to the control group. The participants conducted self-massage at the musculotendinous junction for 3 min daily, five times per week, for 12 weeks. Hamstring extensibility, stiffness, stretch tolerance, and structural indices were measured by a blinded examiner prior to the massage intervention and after 6 and 12 weeks of intervention. The maximum hip flexion angle (HFA) and the maximum passive pressure after 6 and 12 weeks of intervention in the massage group were significantly higher than prior to intervention. The visual analog scale (for pain perception) at maximum HFA, the stiffness of the hamstring, and the structural indices did not differ in either group over the 12 week period. Our results suggest that long-term self-massage at the musculotendinous junction increases hamstring extensibility by improving stretch tolerance. However, this intervention does not change hamstring stiffness. University Hospital Medical Information Network registration number UMIN000011233. Copyright © 2016 Elsevier Ltd. All rights reserved.

Tunneling anisotropic magnetoresistance driven by magnetic phase transition.

PubMed

Chen, X Z; Feng, J F; Wang, Z C; Zhang, J; Zhong, X Y; Song, C; Jin, L; Zhang, B; Li, F; Jiang, M; Tan, Y Z; Zhou, X J; Shi, G Y; Zhou, X F; Han, X D; Mao, S C; Chen, Y H; Han, X F; Pan, F

2017-09-06

The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here, we report an alternative approach to obtaining tunneling anisotropic magnetoresistance in α'-FeRh-based junctions driven by the magnetic phase transition of α'-FeRh and resultantly large variation of the density of states in the vicinity of MgO tunneling barrier, referred to as phase transition tunneling anisotropic magnetoresistance. The junctions with only one α'-FeRh magnetic electrode show a magnetoresistance ratio up to 20% at room temperature. Both the polarity and magnitude of the phase transition tunneling anisotropic magnetoresistance can be modulated by interfacial engineering at the α'-FeRh/MgO interface. Besides the fundamental significance, our finding might add a different dimension to magnetic random access memory and antiferromagnet spintronics.Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic tunnel junctions with one α'-FeRh magnetic electrode.

Electrical Characterization of Graphite/InP Schottky Diodes by I-V-T and C-V Methods

NASA Astrophysics Data System (ADS)

Tiagulskyi, Stanislav; Yatskiv, Roman; Grym, Jan

2018-02-01

A rectifying junction was prepared by casting a drop of colloidal graphite on the surface of an InP substrate. The electrophysical properties of graphite/InP junctions were investigated in a wide temperature range. Temperature-dependent I-V characteristics of the graphite/InP junctions are explained by the thermionic emission mechanism. The Schottky barrier height (SBH) and the ideality factor were found to be 0.9 eV and 1.47, respectively. The large value of the SBH and its weak temperature dependence are explained by lateral homogeneity of the junction, which is related to the structure of the graphite layer. The moderate disagreement between the current-voltage and capacitance-voltage measurements is attributed to the formation of interfacial native oxide film on the InP surface.

Large room-temperature tunneling anisotropic magnetoresistance and electroresistance in single ferromagnet/Nb:SrTiO3 Schottky devices.

PubMed

Kamerbeek, Alexander M; Ruiter, Roald; Banerjee, Tamalika

2018-01-22

There is a large effort in research and development to realize electronic devices capable of storing information in new ways - for instance devices which simultaneously exhibit electro and magnetoresistance. However it remains a challenge to create devices in which both effects coexist. In this work we show that the well-known electroresistance in noble metal-Nb:SrTiO 3 Schottky junctions can be augmented by a magnetoresistance effect in the same junction. This is realized by replacing the noble metal electrode with ferromagnetic Co. This magnetoresistance manifests as a room temperature tunneling anisotropic magnetoresistance (TAMR). The maximum room temperature TAMR (1.6%) is significantly larger and robuster with bias than observed earlier, not using Nb:SrTiO 3 . In a different set of devices, a thin amorphous AlO x interlayer inserted between Co and Nb:SrTiO 3 , reduces the TAMR by more than 2 orders of magnitude. This points to the importance of intimate contact between the Co and Nb:SrTiO 3 for the TAMR effect. This is explained by electric field enhanced spin-orbit coupling of the interfacial Co layer in contact with Nb:SrTiO 3 . We propose that the large TAMR likely has its origin in the 3d orbital derived conduction band and large relative permittivity of Nb:SrTiO 3 and discuss ways to further enhance the TAMR.

Observation and measurement of negative differential resistance on PtSi Schottky junctions on porous silicon.

PubMed

Banihashemian, Seyedeh Maryam; Hajghassem, Hassan; Erfanian, Alireza; Aliahmadi, Majidreza; Mohtashamifar, Mansor; Mosakazemi, Seyed Mohamadhosein

2010-01-01

Nanosize porous Si is made by two step controlled etching of Si. The first etching step is carried on the Si surface and the second is performed after deposition of 75 Å of platinum on the formed surface. A platinum silicide structure with a size of less than 25 nm is formed on the porous Si surface, as measured with an Atomic Forced Microscope (AFM). Differential resistance curve as a function of voltage in 77 K and 100 K shows a negative differential resistance and indicates the effect of quantum tunneling. In general form, the ratio of maximum to minimum tunneling current (PVR) and the number of peaks in I-V curves reduces by increasing the temperature. However, due to accumulation of carriers behind the potential barrier and superposition of several peaks, it is observed that the PVR increases at 100 K and the maximum PVR at 100 K is 189.6.

A technique for transferring a patient's smile line to a cone beam computed tomography (CBCT) image.

PubMed

Bidra, Avinash S

2014-08-01

Fixed implant-supported prosthodontic treatment for patients requiring a gingival prosthesis often demands that bone and implant levels be apical to the patient's maximum smile line. This is to avoid the display of the prosthesis-tissue junction (the junction between the gingival prosthesis and natural soft tissues) and prevent esthetic failures. Recording a patient's lip position during maximum smile is invaluable for the treatment planning process. This article presents a simple technique for clinically recording and transferring the patient's maximum smile line to cone beam computed tomography (CBCT) images for analysis. The technique can help clinicians accurately determine the need for and amount of bone reduction required with respect to the maximum smile line and place implants in optimal positions. Copyright © 2014 Editorial Council for the Journal of Prosthetic Dentistry. Published by Elsevier Inc. All rights reserved.

Probing transport mechanisms of BaFe₂As₂ superconducting films and grain boundary junctions by noise spectroscopy.

PubMed

Barone, C; Romeo, F; Pagano, S; Adamo, M; Nappi, C; Sarnelli, E; Kurth, F; Iida, K

2014-08-22

An important step forward for the understanding of high-temperature superconductivity has been the discovery of iron-based superconductors. Among these compounds, iron pnictides could be used for high-field magnet applications, resulting more advantageous over conventional superconductors, due to a high upper critical field as well as its low anisotropy at low temperatures. However, the principal obstacle in fabricating high quality superconducting wires and tapes is given by grain boundaries. In order to study these effects, the dc transport and voltage-noise properties of Co-doped BaFe₂As₂ superconducting films with artificial grain boundary junctions have been investigated. A specific procedure allows the separation of the film noise from that of the junction. While the former shows a standard 1/f behaviour, the latter is characterized by an unconventional temperature-dependent multi-Lorentzian voltage-spectral density. Moreover, below the film superconducting critical temperature, a peculiar noise spectrum is found for the grain boundary junction. Possible theoretical interpretation of these phenomena is proposed.

Low Temperature Electrical Spin Injection from Highly Spin Polarized Co₂CrAl Heusler Alloy into p-Si.

PubMed

Kar, Uddipta; Panda, J; Nath, T K

2018-06-01

The low temperature spin accumulation in p-Si using Co2CrAl/SiO2 tunnel junction has been investigated in detail. The heterojunction has been fabricated using electron beam evaporation (EBE) technique. The 3-terminal contacts in Hanle geometry has been made for spin transport measurements. The electrical transport properties have been investigated at different isothermal conditions in the temperature range of 10-300 K. The current-voltage characteristics of the junction shows excellent rectifying magnetic diode like behaviour in lower temperature range (below 200 K). At higher temperature, the junction shows nonlinear behaviour without rectifying characteristics. We have observed spin accumulation signal in p-Si semiconductor using SiO2/Co2CrAl tunnel junction in the low temperature regime (30-100 K). Hence the highly spin polarized Full Heusler alloys compounds, like Co2CrAl etc., are very attractive and can act as efficient tunnel device for spin injection in the area of spintronics devices in near future. The estimated spin life time is τ = 54 pS and spin diffusion length inside p-Si is LSD = 289 nm at 30 K for this heterostructure.

Characterization of vertical GaN p-n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures

NASA Astrophysics Data System (ADS)

Kizilyalli, I. C.; Aktas, O.

2015-12-01

There is great interest in wide-bandgap semiconductor devices and most recently in vertical GaN structures for power electronic applications such as power supplies, solar inverters and motor drives. In this paper the temperature-dependent electrical behavior of vertical GaN p-n diodes and vertical junction field-effect transistors fabricated on bulk GaN substrates of low defect density (104 to 106 cm-2) is described. Homoepitaxial MOCVD growth of GaN on its native substrate and the ability to control the doping in the drift layers in GaN have allowed the realization of vertical device architectures with drift layer thicknesses of 6 to 40 μm and net carrier electron concentrations as low as 1 × 1015 cm-3. This parameter range is suitable for applications requiring breakdown voltages of 1.2 kV to 5 kV. Mg, which is used as a p-type dopant in GaN, is a relatively deep acceptor (E A ≈ 0.18 eV) and susceptible to freeze-out at temperatures below 200 K. The loss of holes in p-GaN has a deleterious effect on p-n junction behavior, p-GaN contacts and channel control in junction field-effect transistors at temperatures below 200 K. Impact ionization-based avalanche breakdown (BV > 1200 V) in GaN p-n junctions is characterized between 77 K and 423 K for the first time. At higher temperatures the p-n junction breakdown voltage improves due to increased phonon scattering. A positive temperature coefficient in the breakdown voltage is demonstrated down to 77 K; however, the device breakdown characteristics are not as abrupt at temperatures below 200 K. On the other hand, contact resistance to p-GaN is reduced dramatically above room temperature, improving the overall device performance in GaN p-n diodes in all cases except where the n-type drift region resistance dominates the total forward resistance. In this case, the electron mobility can be deconvolved and is found to decrease with T -3/2, consistent with a phonon scattering model. Also, normally-on vertical junction field-effect transistors with BV = 1000 V and drain currents of 4 A are fabricated and characterized over the same temperature range. It is demonstrated that vertical GaN devices (diodes and transistors) utilizing p-n junctions are suitable for most practical applications including automotive ones (210 K < T < 423 K). While devices are functional at cryogenic temperatures (77 K) there may be some limitations to their performance due the freeze-out of Mg acceptors.

A Computer-Automated Temperature Control System for Semiconductor Measurements.

DTIC Science & Technology

1979-11-01

Engineer: Jerry Silverman (RADC/ESE) temperature controller silicon devices data acquisition system mini-computer control application semiconductor dovice...characterization semiconductor materijals characterization silicon .’ AtlI EAC T 1 -fI I,,’-, *- s t ---v,.1.,,~ - d,f101h ir- IA i lr A computer...depends on the composition of the metals and the temperature of the junction. As the temperature of the junction increases so does the voltage at the

Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers

DOE PAGES

Newhouse-Illige, T.; Xu, Y. H.; Liu, Y. H.; ...

2018-02-13

Perpendicular magnetic tunnel junctions with GdO X tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here we investigate the quality of the GdO X barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlO X and MgO barriers. The interlayer coupling, however, shows an anomalously strong temperature dependence includingmore » sign changes below 80 K. This non-trivial temperature dependence is not described by previous models of interlayer coupling and may be due to the large induced magnetic moment of the Gd ions in the barrier.« less

Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Newhouse-Illige, T.; Xu, Y. H.; Liu, Y. H.

Perpendicular magnetic tunnel junctions with GdO X tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here we investigate the quality of the GdO X barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlO X and MgO barriers. The interlayer coupling, however, shows an anomalously strong temperature dependence includingmore » sign changes below 80 K. This non-trivial temperature dependence is not described by previous models of interlayer coupling and may be due to the large induced magnetic moment of the Gd ions in the barrier.« less

Thermal imaging of spin Peltier effect

NASA Astrophysics Data System (ADS)

Daimon, Shunsuke; Iguchi, Ryo; Hioki, Tomosato; Saitoh, Eiji; Uchida, Ken-Ichi

2016-12-01

The Peltier effect modulates the temperature of a junction comprising two different conductors in response to charge currents across the junction, which is used in solid-state heat pumps and temperature controllers in electronics. Recently, in spintronics, a spin counterpart of the Peltier effect was observed. The `spin Peltier effect' modulates the temperature of a magnetic junction in response to spin currents. Here we report thermal imaging of the spin Peltier effect; using active thermography technique, we visualize the temperature modulation induced by spin currents injected into a magnetic insulator from an adjacent metal. The thermal images reveal characteristic distribution of spin-current-induced heat sources, resulting in the temperature change confined only in the vicinity of the metal/insulator interface. This finding allows us to estimate the actual magnitude of the temperature modulation induced by the spin Peltier effect, which is more than one order of magnitude greater than previously believed.

A gallium phosphide high-temperature bipolar junction transistor

NASA Technical Reports Server (NTRS)

Zipperian, T. E.; Dawson, L. R.; Chaffin, R. J.

1981-01-01

Preliminary results are reported on the development of a high temperature (350 C) gallium phosphide bipolar junction transistor (BJT) for geothermal and other energy applications. This four-layer p(+)n(-)pp(+) structure was formed by liquid phase epitaxy using a supercooling technique to insure uniform nucleation of the thin layers. Magnesium was used as the p-type dopant to avoid excessive out-diffusion into the lightly doped base. By appropriate choice of electrodes, the device may also be driven as an n-channel junction field-effect transistor. The initial design suffers from a series resistance problem which limits the transistor's usefulness at high temperatures.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Fei; Maier, T. A.; Scarola, V. W.

The extended Bose-Hubbard model captures the essential properties of a wide variety of physical systems including ultracold atoms and molecules in optical lattices, Josephson junction arrays, and certain narrow band superconductors. It exhibits a rich phase diagram including a supersolid phase where a lattice solid coexists with a superfluid. We use quantum Monte Carlo to study the supersolid part of the phase diagram of the extended Bose-Hubbard model on the simple cubic lattice. We add disorder to the extended Bose-Hubbard model and find that the maximum critical temperature for the supersolid phase tends to be suppressed by disorder. But wemore » also find a narrow parameter window in which the supersolid critical temperature is enhanced by disorder. Our results show that supersolids survive a moderate amount of spatial disorder and thermal fluctuations in the simple cubic lattice.« less

Modeling the Effects of Varying the Capacitance, Resistance, Temperature, and Frequency Dependence for HTS Josephson Junctions, DC SQUIDs and DC bi-SQUIDS

DTIC Science & Technology

2014-09-01

junction is a thin layer of insulating material sep- arating two superconductors that is thin enough for electrons to tunnel through. Two Josephson...can sense minute magnetic fields approaching 1015 Tesla. These SQUIDs can be arranged in arrays with different coupling schemes and parameter values to...different material and/or method on the bisecting Josephson junction for high temperature superconductor (HTS) YBa2Cu3O7 (YBCO) bi-SQUIDs. This

Single molecule dynamics at a mechanically controllable break junction in solution at room temperature.

PubMed

Konishi, Tatsuya; Kiguchi, Manabu; Takase, Mai; Nagasawa, Fumika; Nabika, Hideki; Ikeda, Katsuyoshi; Uosaki, Kohei; Ueno, Kosei; Misawa, Hiroaki; Murakoshi, Kei

2013-01-23

The in situ observation of geometrical and electronic structural dynamics of a single molecule junction is critically important in order to further progress in molecular electronics. Observations of single molecular junctions are difficult, however, because of sensitivity limits. Here, we report surface-enhanced Raman scattering (SERS) of a single 4,4'-bipyridine molecule under conditions of in situ current flow in a nanogap, by using nano-fabricated, mechanically controllable break junction (MCBJ) electrodes. When adsorbed at room temperature on metal nanoelectrodes in solution to form a single molecule junction, statistical analysis showed that nontotally symmetric b(1) and b(2) modes of 4,4'-bipyridine were strongly enhanced relative to observations of the same modes in solid or aqueous solutions. Significant changes in SERS intensity, energy (wavenumber), and selectivity of Raman vibrational bands that are coincident with current fluctuations provide information on distinct states of electronic and geometrical structure of the single molecule junction, even under large thermal fluctuations occurring at room temperature. We observed the dynamics of 4,4'-bipyridine motion between vertical and tilting configurations in the Au nanogap via b(1) and b(2) mode switching. A slight increase in the tilting angle of the molecule was also observed by noting the increase in the energies of Raman modes and the decrease in conductance of the molecular junction.

Energy-filtered cold electron transport at room temperature

PubMed Central

Bhadrachalam, Pradeep; Subramanian, Ramkumar; Ray, Vishva; Ma, Liang-Chieh; Wang, Weichao; Kim, Jiyoung; Cho, Kyeongjae; Koh, Seong Jin

2014-01-01

Fermi-Dirac electron thermal excitation is an intrinsic phenomenon that limits functionality of various electron systems. Efforts to manipulate electron thermal excitation have been successful when the entire system is cooled to cryogenic temperatures, typically <1 K. Here we show that electron thermal excitation can be effectively suppressed at room temperature, and energy-suppressed electrons, whose energy distribution corresponds to an effective electron temperature of ~45 K, can be transported throughout device components without external cooling. This is accomplished using a discrete level of a quantum well, which filters out thermally excited electrons and permits only energy-suppressed electrons to participate in electron transport. The quantum well (~2 nm of Cr2O3) is formed between source (Cr) and tunnelling barrier (SiO2) in a double-barrier-tunnelling-junction structure having a quantum dot as the central island. Cold electron transport is detected from extremely narrow differential conductance peaks in electron tunnelling through CdSe quantum dots, with full widths at half maximum of only ~15 mV at room temperature. PMID:25204839

Raman Channel Temperature Measurement of SiC MESFET as a Function of Ambient Temperature and DC Power

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Eldridge, Jeffrey J.; Krainsky, Isay L.

2009-01-01

Raman spectroscopy is used to measure the junction temperature of a Cree SiC MESFET as a function of the ambient temperature and DC power. The carrier temperature, which is approximately equal to the ambient temperature, is varied from 25 C to 450 C, and the transistor is biased with VDS=10V and IDS of 50 mA and 100 mA. It is shown that the junction temperature is approximately 52 and 100 C higher than the ambient temperature for the DC power of 500 and 1000 mW, respectively.

Die attach dimension and material on thermal conductivity study for high power COB LED

NASA Astrophysics Data System (ADS)

Sarukunaselan, K.; Ong, N. R.; Sauli, Z.; Mahmed, N.; Kirtsaeng, S.; Sakuntasathien, S.; Suppiah, S.; Alcain, J. B.; Retnasamy, V.

2017-09-01

High power LED began to gain popularity in the semiconductor market due to its efficiency and luminance. Nonetheless, along with the increased in efficiency, there was an increased in the junction temperature too. The alleviating junction temperature is undesirable since the performances and lifetime will be degraded over time. Therefore, it is crucial to solve this thermal problem by maximizing the heat dissipation to the ambience. Improvising the die attach (DA) layer would be the best option because this layer is sandwiched between the chip (heat source) and the substrate (channel to the ambient). In this paper, the impact of thickness and thermal conductivity onto the junction temperature and Von Mises stress is analyzed. Results obtained showed that the junction temperature is directly proportional to the thickness but the stress was inversely proportional to the thickness of the DA. The thermal conductivity of the materials did affect the junction temperature as there was not much changes once the thermal conductivity reached 20W/mK. However, no significant changes were observed on the Von Mises stress caused by the thermal conductivity. Material with the second highest thermal conductivity had the lowest stress, whereas the highest conductivity material had the highest stress value at 20 µm. Overall, silver sinter provided the best thermal dissipation compared to the other materials.

Superconducting current injection transistor with very high critical-current-density edge-junctions

NASA Astrophysics Data System (ADS)

van Zeghbroeck, B. J.

1985-03-01

A Superconducting Current Injection Transistor (Super-CIT) was fabricated with very high critical current-density edge-junctions. The junctions have a niobium base electrode and a lead-alloy counter electrode. The length of the junctions is 30 microns and the critical-current density is 190KA/sq cm. The Super-CIT has a current gain of 2, a large signal transresistance of 100 mV/A, and the turn-on delay, inferred from the junction resonance, is 7ps. The power dissipation is 3.5 microwatts and the power-delay product is 24.5aJ. Gap reduction due to heating was observed, limiting the maximum power dissipation per unit length to 1.1 microwatt/micron. Compared to lead-alloy Super-CITs, the device is five times smaller, three times faster, and has a three times larger output voltage. The damping resistor and the contact junction could also be eliminated.

Smallest fullerene-like clusters in two-probe device junctions: first principle study

NASA Astrophysics Data System (ADS)

Kaur, Milanpreet; Sawhney, Ravinder Singh; Engles, Derick

2017-07-01

First principle calculations based on density functional theory are realised to investigate the electron transport of the smallest fullerene-like clusters as two-probe junction devices. The junction devices are constructed by mechanically controlled break junction techniques to ensure the maximum stability of the Be20, B20 and N20 cluster molecular junctions. We investigate the density of states, transmission spectrum, molecular orbitals, current and differential conductance characteristics at discrete bias voltages to gain insight about the various transport phenomena occurring in these nano-junctions. The results show that B20 molecule when stringed to gold electrodes works as an ideal nano-device similar to the pure C20 device and is more symmetric in its characteristic nature. However, in N20 molecular device, the conduction is negligible due to the higher atomic interactions within N20 molecule, despite the fact that it is constructed with penta-valent atoms.

Mixing Hot and Cold Water Streams at a T-Junction

ERIC Educational Resources Information Center

Sharp, David; Zhang, Mingqian; Xu, Zhenghe; Ryan, Jim; Wanke, Sieghard; Afacan, Artin

2008-01-01

A simple mixing of a hot- and cold-water stream at a T-junction was investigated. The main objective was to use mass and energy balance equations to predict mass low rates and the temperature of the mixed stream after the T-junction, and then compare these with the measured values. Furthermore, the thermocouple location after the T-junction and…

Quantum shot noise in tunnel junctions

NASA Technical Reports Server (NTRS)

Ben-Jacob, E.; Mottola, E.; Schoen, G.

1983-01-01

The current and voltage fluctuations in a normal tunnel junction are calculated from microscopic theory. The power spectrum can deviate from the familiar Johnson-Nyquist form when the self-capacitance of the junction is small, at low temperatures permitting experimental verification. The deviation reflects the discrete nature of the charge transfer across the junction and should be present in a wide class of similar systems.

A transistor based on 2D material and silicon junction

NASA Astrophysics Data System (ADS)

Kim, Sanghoek; Lee, Seunghyun

2017-07-01

A new type of graphene-silicon junction transistor based on bipolar charge-carrier injection was designed and investigated. In contrast to many recent studies on graphene field-effect transistor (FET), this device is a new type of bipolar junction transistor (BJT). The transistor fully utilizes the Fermi level tunability of graphene under bias to increase the minority-carrier injection efficiency of the base-emitter junction in the BJT. Single-layer graphene was used to form the emitter and the collector, and a p-type silicon was used as the base. The output of this transistor was compared with a metal-silicon junction transistor ( i.e. surface-barrier transistor) to understand the difference between a graphene-silicon junction and metal-silicon Schottky junction. A significantly higher current gain was observed in the graphene-silicon junction transistor as the base current was increased. The graphene-semiconductor heterojunction transistor offers several unique advantages, such as an extremely thin device profile, a low-temperature (< 110 °C) fabrication process, low cost (no furnace process), and high-temperature tolerance due to graphene's stability. A transistor current gain ( β) of 33.7 and a common-emitter amplifier voltage gain of 24.9 were achieved.

High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O

DOEpatents

Ginley, D.S.; Hietala, V.M.; Hohenwarter, G.K.G.; Martens, J.S.; Plut, T.A.; Tigges, C.P.; Vawter, G.A.; Zipperian, T.E.

1994-10-25

A process is disclosed for formulating non-hysteretic and hysteretic Josephson junctions using HTS materials which results in junctions having the ability to operate at high temperatures while maintaining high uniformity and quality. The non-hysteretic Josephson junction is formed by step-etching a LaAlO[sub 3] crystal substrate and then depositing a thin film of TlCaBaCuO on the substrate, covering the step, and forming a grain boundary at the step and a subsequent Josephson junction. Once the non-hysteretic junction is formed the next step to form the hysteretic Josephson junction is to add capacitance to the system. In the current embodiment, this is accomplished by adding a thin dielectric layer, LaA1O[sub 3], followed by a cap layer of a normal metal where the cap layer is formed by first depositing a thin layer of titanium (Ti) followed by a layer of gold (Au). The dielectric layer and the normal metal cap are patterned to the desired geometry. 8 figs.

Fast Risetime Reverse Bias Pulse Failures in SiC PN Junction Diodes

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Fazi, Christian; Parsons, James D.

1996-01-01

SiC-based high temperature power devices are being developed for aerospace systems which will require high reliability. One behavior crucial to power device reliability. To date, it has necessarily been assumed to date is that the breakdown behavior of SiC pn junctions will be similar to highly reliable silicon-based pn junctions. Challenging this assumption, we report the observation of anomalous unreliable reverse breakdown behavior in moderately doped (2-3 x 10(exp 17) cm(exp -3)) small-area 4H- and 6H-SiC pn junction diodes at temperatures ranging from 298 K (25 C) to 873 K (600 C). We propose a mechanism in which carrier emission from un-ionized dopants and deep level defects leads to this unstable behavior. The fundamental instability mechanism is applicable to all wide bandgap semiconductors whose dopants are significantly un-ionized at typical device operating temperatures.

Study on iron disilicide thermoelectric generator

NASA Astrophysics Data System (ADS)

Anderson, Gerald

1987-11-01

The first objective of the experimental work is to verify the characteristics of commercially available material. The Japanese company Komatsu Electronics Ltd., sells U-Shaped couples of FeSi2. Twenty-four couples are now in our laboratory. Each leg of the couple is made of one type (N or P) of material and the junction is placed directly into a flame. Being almost impossible to measure the hot junction temperature in the flame and to evaluate the heat flux going through the material between hot and cold junctions, we have designed an experimental assembly, suited to measure these values. The main problem is to obtain a good thermal contact for the hot junctions. If not, there is an important temperature drop between the hot source and the hot junction of the couple leading to wrong values of the characteristics.

Spatial inhomogeneity in Schottky barrier height at graphene/MoS2 Schottky junctions

NASA Astrophysics Data System (ADS)

Tomer, D.; Rajput, S.; Li, L.

2017-04-01

Transport properties of graphene semiconductor Schottky junctions strongly depend on interfacial inhomogeneities due to the inherent formation of ripples and ridges. Here, chemical vapor deposited graphene is transferred onto multilayer MoS2 to fabricate Schottky junctions. These junctions exhibit rectifying current-voltage behavior with the zero bias Schottky barrier height increases and ideality factor decreases with increasing temperature between 210 and 300 K. Such behavior is attributed to the inhomogeneous interface that arises from graphene ripples and ridges, as revealed by atomic force and scanning tunneling microscopy imaging. Assuming a Gaussian distribution of the barrier height, a mean value of 0.96  ±  0.14 eV is obtained. These findings indicate a direct correlation between temperature dependent Schottky barrier height and spatial inhomogeneity in graphene/2D semiconductor Schottky junctions.

Reliability Prediction Models for Discrete Semiconductor Devices

DTIC Science & Technology

1988-07-01

influence failure rate were device construction, semiconductor material, junction temperature, electrical stress, circuit application., a plication...found to influence failure rate were device construction, semiconductor material, junction temperature, electrical stress, circuit application...MFA Airbreathlng 14issile, Flight MFF Missile, Free Flight ML Missile, Launch MMIC Monolithic Microwave Integrated Circuits MOS Metal-Oxide

pn junctions based on a single transparent perovskite semiconductor BaSnO3

NASA Astrophysics Data System (ADS)

Kim, Hoon Min; Kim, Useong; Park, Chulkwon; Kwon, Hyukwoo; Lee, Woongjae; Kim, Tai Hoon; Kim, Kee Hoon; Char, Kookrin; Mdpl, Department Of Physics; Astronomy Team; Censcmr, Department Of Physics; Astronomy Team

2014-03-01

Successful p doping of transparent oxide semiconductor will further increase its potential, especially in the area of optoelectronic applications. We will report our efforts to dope the BaSnO3 (BSO) with K by pulsed laser deposition. Although the K doped BSO exhibits rather high resistivity at room temperature, its conductivity increases dramatically at higher temperatures. Furthermore, the conductivity decreases when a small amount of oxygen was removed from the film, consistent with the behavior of p type doped oxides. We have fabricated pn junctions by using K doped BSO as a p type and La doped BSO as an n type material. I_V characteristics of these devices show the typical rectifying behavior of pn junctions. We will present the analysis of the junction properties from the temperature dependent measurement of their electrical properties, which shows that the I_V characteristics are consistent with the material parameters such as the carrier concentration, the mobility, and the bandgap. Our demonstration of pn junctions based on a single transparent perovskite semiconductor further enhances the potential of BSO system with high mobility and stability.

High Density Planar High Temperature Superconducting Josephson Junctions Arrays

DTIC Science & Technology

2006-09-01

focusing effects in magnetic field measurements and are more comparable with classical sandwich type Josephson junctions. Low temper- ature (100TC...The result is shown in Figure 4.1(b). The noise temperature calculated from the fit was 71.9 K, which is close to the measurement temperature of 63 K...The additional noise temperature is attributed to the measurement system. Both of the fits produce similar IcR,, 35 WV, and 31 MV for the RSJ and

High-Temperature High-Power Packaging Techniques for HEV Traction Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elshabini, Aicha; Barlow, Fred D.

A key issue associated with the wider adoption of hybrid-electric vehicles (HEV) and plug in hybrid-electric vehicles (PHEV) is the implementation of the power electronic systems that are required in these products. One of the primary industry goals is the reduction in the price of these vehicles relative to the cost of traditional gasoline powered vehicles. Today these systems, such as the Prius, utilize one coolant loop for the engine at approximately 100 C coolant temperatures, and a second coolant loop for the inverter at 65 C. One way in which significant cost reduction of these systems could be achievedmore » is through the use of a single coolant loop for both the power electronics as well as the internal combustion engine (ICE). This change in coolant temperature significantly increases the junction temperatures of the devices and creates a number of challenges for both device fabrication and the assembly of these devices into inverters and converters for HEV and PHEV applications. Traditional power modules and the state-of-the-art inverters in the current HEV products, are based on chip and wire assembly and direct bond copper (DBC) on ceramic substrates. While a shift to silicon carbide (SiC) devices from silicon (Si) devices would allow the higher operating temperatures required for a single coolant loop, it also creates a number of challenges for the assembly of these devices into power inverters. While this traditional packaging technology can be extended to higher temperatures, the key issues are the substrate material and conductor stability, die bonding material, wire bonds, and bond metallurgy reliability as well as encapsulation materials that are stable at high operating temperatures. The larger temperature differential during power cycling, which would be created by higher coolant temperatures, places tremendous stress on traditional aluminum wire bonds that are used to interconnect power devices. Selection of the bond metallurgy and wire bond geometry can play a key role in mitigating this stress. An alternative solution would be to eliminate the wire bonds completely through a fundamentally different method of forming a reliable top side interconnect. Similarly, the solders used in most power modules exhibit too low of a liquidus to be viable solutions for maximum junction temperatures of 200 C. Commonly used encapsulation materials, such as silicone gels, also suffer from an inability to operate at 200 C for extended periods of time. Possible solutions to these problems exist in most cases but require changes to the traditional manufacturing process used in these modules. In addition, a number of emerging technologies such as Si nitride, flip-chip assembly methods, and the elimination of base-plates would allow reliable module development for operation of HEV and PHEV inverters at elevated junction temperatures.« less

The Radar Effects of Perchlorate-Doped Ice in the Martian Polar Layered Deposits

NASA Astrophysics Data System (ADS)

Stillman, D.; Winebrenner, D. P.; Grimm, R. E.; Pathare, A.

2010-12-01

The presence of perchlorate in soil at near-polar latitudes on Mars suggests that dust in the ice of the North Polar Layered Deposits (NPLD) may introduce perchlorate impurities to that ice. Because eutectic temperatures of perchlorate salts range as low as 206 K (for magnesium perchlorate), perchlorate doping of NPLD ice may result in grain-scale liquid veins and softening of ice rheology at temperatures comparable to those computed for the base of the NPLD in the present climate. Any such softening would be important for understanding how processes including ice flow have shaped the NPLD. Observable consequences of such softening, or of the combination of perchlorate doping and temperatures that could cause softening, are thus similarly important. In particular, the dielectric properties of perchlorate-laden ice in a temperature gradient will change relatively rapidly at the point in the gradient near the eutectic temperature. Here we investigate the radar reflectivity of such a eutectic transition in ice with a model in which perchlorate concentration is constant and temperature varies linearly with depth in the ice. We have conducted measurements of the complex permittivity of Mg and Na perchlorate-doped ice over a range of temperatures (183 - 273 K) and concentrations. Below the eutectic temperature, the perchlorate-doped ice has electrical properties similar to that of choride-doped ice. However, above the eutectic temperature, some of the ice melts forming liquid at triple junctions. At concentrations above 3 mM, the liquid at triple junctions become connected forming brine channels, which greatly increase the dc conductivity and radar attenuation. At concentrations below 3 mM, the liquid at triple junctions are not connected and do not affect the dc conductivity. However, the liquid H2O molecules are able to rotate their permanent dipole at radar frequencies, thus causing an increase in radar attenuation. The MARSIS and SHARAD attenuation rates increase with temperature as the strength of the loss increases with a greater amount of liquid water even though the relaxation frequency (maximum loss) shifts to higher frequencies. We combine our electrical property measurements with a model for radar reflection from a continuously-varying dielectric profile. Because the change in permittivity occurs over a range of depths depending on the value of the temperature gradient, radar detectability of the eutectic transition depends on the radar frequency as well as gradient and concentration values. We compute expected radar echo strengths for MARSIS and SHARAD and depths relative to the bed at which transitions may be expected, to address whether information of direct rheological relevance may be available from those instruments.

Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions.

PubMed

Tomer, D; Rajput, S; Hudy, L J; Li, C H; Li, L

2015-05-29

Graphene (Gr) interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer Gr onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by current-voltage measurements between 215 and 350 K. An increase in the zero bias barrier height and decrease in the ideality factor are observed with increasing temperature for both junctions. Such behavior is attributed to barrier inhomogeneities that arise from interfacial disorders as revealed by scanning tunneling microscopy/spectroscopy. Assuming a Gaussian distribution of the barrier heights, mean values of 1.14 ± 0.14 eV and 0.76 ± 0.10 eV are found for Gr/Si and Gr/GaAs junctions, respectively. These findings resolve the origin of barrier height inhomogeneities in these Schottky junctions.

Spatially inhomogeneous barrier height in graphene/MoS2 Schottky junctions

NASA Astrophysics Data System (ADS)

Tomer, Dushyant; Rajput, Shivani; Li, Lian

Graphene interfaced with a semiconductor forms a Schottky junction with rectifying properties. In this study, graphene Schottky junctions are fabricated by transferring CVD monolayer graphene on mechanically exfoliated MoS2 multilayers. The forward bias current-voltage characteristics are measured in the temperature range of 210-300 K. An increase in the zero bias barrier height and decrease in the ideality factor are observed with increasing temperature. Such behavior is attributed to Schottky barrier inhomogeneities possibly due to graphene ripples and ridges at the junction interface as suggested by atomic force microscopy. Assuming a Gaussian distribution of the barrier height, mean barrier of 0.97+/-0.10 eV is found for the graphene MoS2 junction. Our findings provide significant insight on the barrier height inhomogeneities in graphene/two dimensional semiconductor Schottky junctions. U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering Award No. DEFG02-07ER46228.

Van der Waals heterojunction diode composed of WS2 flake placed on p-type Si substrate

NASA Astrophysics Data System (ADS)

Aftab, Sikandar; Farooq Khan, M.; Min, Kyung-Ah; Nazir, Ghazanfar; Afzal, Amir Muhammad; Dastgeer, Ghulam; Akhtar, Imtisal; Seo, Yongho; Hong, Suklyun; Eom, Jonghwa

2018-01-01

P-N junctions represent the fundamental building blocks of most semiconductors for optoelectronic functions. This work demonstrates a technique for forming a WS2/Si van der Waals junction based on mechanical exfoliation. Multilayered WS2 nanoflakes were exfoliated on the surface of bulk p-type Si substrates using a polydimethylsiloxane stamp. We found that the fabricated WS2/Si p-n junctions exhibited rectifying characteristics. We studied the effect of annealing processes on the performance of the WS2/Si van der Waals p-n junction and demonstrated that annealing improved its electrical characteristics. However, devices with vacuum annealing have an enhanced forward-bias current compared to those annealed in a gaseous environment. We also studied the top-gate-tunable rectification characteristics across the p-n junction interface in experiments as well as density functional theory calculations. Under various temperatures, Zener breakdown occurred at low reverse-bias voltages, and its breakdown voltage exhibited a negative coefficient of temperature. Another breakdown voltage was observed, which increased with temperature, suggesting a positive coefficient of temperature. Therefore, such a breakdown can be assigned to avalanche breakdown. This work demonstrates a promising application of two-dimensional materials placed directly on conventional bulk Si substrates.

Modeling single molecule junction mechanics as a probe of interface bonding

NASA Astrophysics Data System (ADS)

Hybertsen, Mark S.

2017-03-01

Using the atomic force microscope based break junction approach, applicable to metal point contacts and single molecule junctions, measurements can be repeated thousands of times resulting in rich data sets characterizing the properties of an ensemble of nanoscale junction structures. This paper focuses on the relationship between the measured force extension characteristics including bond rupture and the properties of the interface bonds in the junction. A set of exemplary model junction structures has been analyzed using density functional theory based calculations to simulate the adiabatic potential surface that governs the junction elongation. The junction structures include representative molecules that bond to the electrodes through amine, methylsulfide, and pyridine links. The force extension characteristics are shown to be most effectively analyzed in a scaled form with maximum sustainable force and the distance between the force zero and force maximum as scale factors. Widely used, two parameter models for chemical bond potential energy versus bond length are found to be nearly identical in scaled form. Furthermore, they fit well to the present calculations of N-Au and S-Au donor-acceptor bonds, provided no other degrees of freedom are allowed to relax. Examination of the reduced problem of a single interface, but including relaxation of atoms proximal to the interface bond, shows that a single-bond potential form renormalized by an effective harmonic potential in series fits well to the calculated results. This allows relatively accurate extraction of the interface bond energy. Analysis of full junction models shows cooperative effects that go beyond the mechanical series inclusion of the second bond in the junction, the spectator bond that does not rupture. Calculations for a series of diaminoalkanes as a function of molecule length indicate that the most important cooperative effect is due to the interactions between the dipoles induced by the donor-acceptor bond formation at the junction interfaces. The force extension characteristic of longer molecules such as diaminooctane, where the dipole interaction effects drop to a negligible level, accurately fit to the renormalized single-bond potential form. The results suggest that measured force extension characteristics for single molecule junctions could be analyzed with a modified potential form that accounts for the energy stored in deformable mechanical components in series.

Modeling single molecule junction mechanics as a probe of interface bonding

DOE PAGES

Hybertsen, Mark S.

2017-03-07

Using the atomic force microscope based break junction approach, applicable to metal point contacts and single molecule junctions, measurements can be repeated thousands of times resulting in rich data sets characterizing the properties of an ensemble of nanoscale junction structures. This paper focuses on the relationship between the measured force extension characteristics including bond rupture and the properties of the interface bonds in the junction. We analyzed a set of exemplary model junction structures using density functional theory based calculations to simulate the adiabatic potential surface that governs the junction elongation. The junction structures include representative molecules that bond tomore » the electrodes through amine, methylsulfide, and pyridine links. The force extension characteristics are shown to be most effectively analyzed in a scaled form with maximum sustainable force and the distance between the force zero and force maximum as scale factors. Widely used, two parameter models for chemical bond potential energy versus bond length are found to be nearly identical in scaled form. Furthermore, they fit well to the present calculations of N–Au and S–Au donor-acceptor bonds, provided no other degrees of freedom are allowed to relax. Examination of the reduced problem of a single interface, but including relaxation of atoms proximal to the interface bond, shows that a single-bond potential form renormalized by an effective harmonic potential in series fits well to the calculated results. This, then, allows relatively accurate extraction of the interface bond energy. Analysis of full junction models shows cooperative effects that go beyond the mechanical series inclusion of the second bond in the junction, the spectator bond that does not rupture. Calculations for a series of diaminoalkanes as a function of molecule length indicate that the most important cooperative effect is due to the interactions between the dipoles induced by the donor-acceptor bond formation at the junction interfaces. The force extension characteristic of longer molecules such as diaminooctane, where the dipole interaction effects drop to a negligible level, accurately fit to the renormalized single-bond potential form. Our results suggest that measured force extension characteristics for single molecule junctions could be analyzed with a modified potential form that accounts for the energy stored in deformable mechanical components in series.« less

Modeling single molecule junction mechanics as a probe of interface bonding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hybertsen, Mark S.

Using the atomic force microscope based break junction approach, applicable to metal point contacts and single molecule junctions, measurements can be repeated thousands of times resulting in rich data sets characterizing the properties of an ensemble of nanoscale junction structures. This paper focuses on the relationship between the measured force extension characteristics including bond rupture and the properties of the interface bonds in the junction. We analyzed a set of exemplary model junction structures using density functional theory based calculations to simulate the adiabatic potential surface that governs the junction elongation. The junction structures include representative molecules that bond tomore » the electrodes through amine, methylsulfide, and pyridine links. The force extension characteristics are shown to be most effectively analyzed in a scaled form with maximum sustainable force and the distance between the force zero and force maximum as scale factors. Widely used, two parameter models for chemical bond potential energy versus bond length are found to be nearly identical in scaled form. Furthermore, they fit well to the present calculations of N–Au and S–Au donor-acceptor bonds, provided no other degrees of freedom are allowed to relax. Examination of the reduced problem of a single interface, but including relaxation of atoms proximal to the interface bond, shows that a single-bond potential form renormalized by an effective harmonic potential in series fits well to the calculated results. This, then, allows relatively accurate extraction of the interface bond energy. Analysis of full junction models shows cooperative effects that go beyond the mechanical series inclusion of the second bond in the junction, the spectator bond that does not rupture. Calculations for a series of diaminoalkanes as a function of molecule length indicate that the most important cooperative effect is due to the interactions between the dipoles induced by the donor-acceptor bond formation at the junction interfaces. The force extension characteristic of longer molecules such as diaminooctane, where the dipole interaction effects drop to a negligible level, accurately fit to the renormalized single-bond potential form. Our results suggest that measured force extension characteristics for single molecule junctions could be analyzed with a modified potential form that accounts for the energy stored in deformable mechanical components in series.« less

Realization of radial p-n junction silicon nanowire solar cell based on low-temperature and shallow phosphorus doping

NASA Astrophysics Data System (ADS)

Dong, Gangqiang; Liu, Fengzhen; Liu, Jing; Zhang, Hailong; Zhu, Meifang

2013-12-01

A radial p-n junction solar cell based on vertically free-standing silicon nanowire (SiNW) array is realized using a novel low-temperature and shallow phosphorus doping technique. The SiNW arrays with excellent light trapping property were fabricated by metal-assisted chemical etching technique. The shallow phosphorus doping process was carried out in a hot wire chemical vapor disposition chamber with a low substrate temperature of 250°C and H2-diluted PH3 as the doping gas. Auger electron spectroscopy and Hall effect measurements prove the formation of a shallow p-n junction with P atom surface concentration of above 1020 cm-3 and a junction depth of less than 10 nm. A short circuit current density of 37.13 mA/cm2 is achieved for the radial p-n junction SiNW solar cell, which is enhanced by 7.75% compared with the axial p-n junction SiNW solar cell. The quantum efficiency spectra show that radial transport based on the shallow phosphorus doping of SiNW array improves the carrier collection property and then enhances the blue wavelength region response. The novel shallow doping technique provides great potential in the fabrication of high-efficiency SiNW solar cells.

Fabrication of photovoltaic laser energy converterby MBE

NASA Technical Reports Server (NTRS)

Lu, Hamilton; Wang, Scott; Chan, W. S.

1993-01-01

A laser-energy converter, fabricated by molecular beam epitaxy (MBE), was developed. This converter is a stack of vertical p-n junctions connected in series by low-resistivity, lattice matched CoSi2 layers to achieve a high conversion efficiency. Special high-temperature electron-beam (e-beam) sources were developed especially for the MBE growth of the junctions and CoSi2 layers. Making use of the small (greater than 1.2 percent) lattice mismatch between CoSi2 and Si layers, high-quality and pinhole-free epilayers were achieved, providing a capability of fabricating all the junctions and connecting layers as a single growth process with one pumpdown. Well-defined multiple p-n junctions connected by CoSi2 layers were accomplished by employing a low growth temperature (greater than 700 C) and a low growth rate (less than 0.5 microns/hour). Producing negligible interdiffusion, the low growth temperature and rate also produced negligible pinholes in the CoSi2 layers. For the first time, a stack of three p-n junctions connected by two 10(exp -5) Ohm-cm CoSi2 layers was achieved, meeting the high conversion efficiency requirement. This process can now be optimized for high growth rate to form a practical converter with 10 p-n junctions in the stack.

High-Temperature High-Power Packaging Techniques for HEV Traction Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barlow, F.D.; Elshabini, A.

A key issue associated with the wider adoption of hybrid-electric vehicles (HEV) and plug in hybrid-electric vehicles (PHEV) is the implementation of the power electronic systems that are required in these products [1]. To date, many consumers find the adoption of these technologies problematic based on a financial analysis of the initial cost versus the savings available from reduced fuel consumption. Therefore, one of the primary industry goals is the reduction in the price of these vehicles relative to the cost of traditional gasoline powered vehicles. Part of this cost reduction must come through optimization of the power electronics requiredmore » by these vehicles. In addition, the efficiency of the systems must be optimized in order to provide the greatest range possible. For some drivers, any reduction in the range associated with a potential HEV or PHEV solution in comparison to a gasoline powered vehicle represents a significant barrier to adoption and the efficiency of the power electronics plays an important role in this range. Likewise, high efficiencies are also important since lost power further complicates the thermal management of these systems. Reliability is also an important concern since most drivers have a high level of comfort with gasoline powered vehicles and are somewhat reluctant to switch to a less proven technology. Reliability problems in the power electronics or associated components could not only cause a high warranty cost to the manufacturer, but may also taint these technologies in the consumer's eyes. A larger vehicle offering in HEVs is another important consideration from a power electronics point of view. A larger vehicle will need more horsepower, or a larger rated drive. In some ways this will be more difficult to implement from a cost and size point of view. Both the packaging of these modules and the thermal management of these systems at competitive price points create significant challenges. One way in which significant cost reduction of these systems could be achieved is through the use of a single coolant loop for both the power electronics as well as the internal combustion engine (ICE) [2]. This change would reduce the complexity of the cooling system which currently relies on two loops to a single loop [3]. However, the current nominal coolant temperature entering these inverters is 65 C [3], whereas a normal ICE coolant temperature would be much higher at approximately 100 C. This change in coolant temperature significantly increases the junction temperatures of the devices and creates a number of challenges for both device fabrication and the assembly of these devices into inverters and converters for HEV and PHEV applications. With this change in mind, significant progress has been made on the use of SiC devices for inverters that can withstand much higher junction temperatures than traditional Si based inverters [4,5,6]. However, a key problem which the single coolant loop and high temperature devices is the effective packaging of these devices and related components into a high temperature inverter. The elevated junction temperatures that exist in these modules are not compatible with reliable inverters based on existing packaging technology. This report seeks to provide a literature survey of high temperature packaging and to highlight the issues related to the implementation of high temperature power electronic modules for HEV and PHEV applications. For purposes of discussion, it will be assumed in this report that 200 C is the targeted maximum junction temperature.« less

Single molecule junction conductance and binding geometry

NASA Astrophysics Data System (ADS)

Kamenetska, Maria

This Thesis addresses the fundamental problem of controlling transport through a metal-organic interface by studying electronic and mechanical properties of single organic molecule-metal junctions. Using a Scanning Tunneling Microscope (STM) we image, probe energy-level alignment and perform STM-based break junction (BJ) measurements on molecules bound to a gold surface. Using Scanning Tunneling Microscope-based break-junction (STM-BJ) techniques, we explore the effect of binding geometry on single-molecule conductance by varying the structure of the molecules, metal-molecule binding chemistry and by applying sub-nanometer manipulation control to the junction. These experiments are performed both in ambient conditions and in ultra high vacuum (UHV) at cryogenic temperatures. First, using STM imaging and scanning tunneling spectroscopy (STS) measurements we explore binding configurations and electronic properties of an amine-terminated benzene derivative on gold. We find that details of metal-molecule binding affect energy-level alignment at the interface. Next, using the STM-BJ technique, we form and rupture metal-molecule-metal junctions ˜104 times to obtain conductance-vs-extension curves and extract most likely conductance values for each molecule. With these measurements, we demonstrated that the control of junction conductance is possible through a choice of metal-molecule binding chemistry and sub-nanometer positioning. First, we show that molecules terminated with amines, sulfides and phosphines bind selectively on gold and therefore demonstrate constant conductance levels even as the junction is elongated and the metal-molecule attachment point is modified. Such well-defined conductance is also obtained with paracyclophane molecules which bind to gold directly through the pi system. Next, we are able to create metal-molecule-metal junctions with more than one reproducible conductance signatures that can be accessed by changing junction geometry. In the case of pyridine-linked molecules, conductance can be reliably switched between two distinct conductance states using sub-nanometer mechanical manipulation. Using a methyl sulfide linker attached to an oligoene backbone, we are able to create a 3-nm-long molecular potentiometer, whose resistance can be tuned exponentially with Angstom-scale modulations in metal-molecule configuration. These experiments points to a new paradigm for attaining reproducible electrical characteristics of metal-organic devices which involves controlling linker-metal chemistry rather than fabricating identically structured metal-molecule interfaces. By choosing a linker group which is either insensitive to or responds reproducibly to changes in metal-molecule configuration, one can design single molecule devices with functionality more complex than a simple resistor. These ambient temperature experiments were combined with UHV conductance measurements performed in a commercial STM on amine-terminated benzene derivatives which conduct through a non-resonant tunneling mechanism, at temperatures varying from 5 to 300 Kelvin. Our results indicate that while amine-gold binding remains selective irrespective of environment, conductance is not temperature independent, in contrast to what is expected for a tunneling mechanism. Furthermore, using temperature-dependent measurements in ambient conditions we find that HOMO-conducting amines and LUMO-conducting pyridines show opposite dependence of conductance on temperature. These results indicate that energy-level alignment between the molecule and the electrodes changes as a result of varying electrode structure at different temperatures. We find that temperature can serve as a knob with which to tune transport properties of single molecule-metal junctions.

Bypass diode integration

NASA Technical Reports Server (NTRS)

Shepard, N. F., Jr.

1981-01-01

Protective bypass diodes and mounting configurations which are applicable for use with photovoltaic modules having power dissipation requirements in the 5 to 50 watt range were investigated. Using PN silicon and Schottky diode characterization data on packaged diodes and diode chips, typical diodes were selected as representative for each range of current carrying capacity, an appropriate heat dissipating mounting concept along with its environmental enclosure was defined, and a thermal analysis relating junction temperature as a function of power dissipation was performed. In addition, the heat dissipating mounting device dimensions were varied to determine the effect on junction temperature. The results of the analysis are presented as a set of curves indicating junction temperature as a function of power dissipation for each diode package.

Photoresponse of a Bilayer Graphene p-n Junction Using a Combination of Electrostatic and Electrolytic Gating

NASA Astrophysics Data System (ADS)

Grover, Sameer; Joshi, Anupama; Tulapurkar, Ashwin; Deshmukh, Mandar

Electrolyic gating can induce large carrier densities in graphene and other 2D-materials. We demonstrate a technique for the formation of p-n junctions in graphene using a combination of electrostatic and electrolytic gating. This was done by patterning the negative resist hydrogen silsesquioxane (HSQ) to cover part of a bilayer graphene flake. We performed electrical and photoresponse measurements with the ionic liquid EMI-Im as the top gate and with a silicon back gate. The device characteristics were measured both at room temperature, where the ions are mobile, and at low temperatures, where the ionic liquid is frozen. We created p-n junctions that work at both room temperature and at low temperatures below the freezing point of the ionic liquid. This technique is suited for studying the photoresponse of graphene p-n junctions because of the larger transparency of ionic liquids compared to metallic gates as used in previous studies. We found that the photoresponse is dominated by the photo-thermoelectric effect, characterized by a six fold pattern in the photovoltage. The photovoltage increases as the temperature decreases which is indicative of hot electron thermalization by disorder assisted supercollisions. DST, DAE, Government of India.

Photoluminescence and photocatalytic properties of rhombohedral CuGaO2 nanoplates

PubMed Central

Shi, Linlin; Wang, Fei; Wang, Yunpeng; Wang, Dengkui; Zhao, Bin; Zhang, Ligong; Zhao, Dongxu; Shen, Dezhen

2016-01-01

Rhombohedral phase CuGaO2 nanoplates with a diameter of about 10 μm were synthesized via low temperature hydrothermal method. Room temperature and low temperature photoluminescence of the obtained CuGaO2 nanoplates were characterized. CuGaO2 nanoplates exhibited blue emission at room temperature and free exciton emission were appeared at low temperature. The blue emission is originated from defects such as Cu vacancies, which is the possible origin of p-type conductivity. The appearance of free exciton emission can demonstrate the direct bandgap transition behavior of CuGaO2 nanoplates. The as-prepared p-type CuGaO2 nanoplates were further decorated by n-type ZnO nanoparticles via calcination method to fabricate p-n junction nanocomposites. The nanocomposites exhibited enhanced photocatalytic activity which can be ascribed to the effective separation of photogenerated carriers by the internal electrostatic field in the p-n junction region, and the enhanced light absorption properties resulted from sub-bandgap absorption effect of p-n junction. This work has offered a new insight into the design of p-n junction devices using p-type CuGaO2 nanoplates. PMID:26887923

High-temperature tunneling electroresistance in metal/ferroelectric/semiconductor tunnel junctions

NASA Astrophysics Data System (ADS)

Xi, Zhongnan; Jin, Qiao; Zheng, Chunyan; Zhang, Yongcheng; Lu, Chaojing; Li, Qiang; Li, Shandong; Dai, Jiyan; Wen, Zheng

2017-09-01

Recently, ferroelectric tunnel junctions (FTJs) have attracted great attention due to promising applications in non-volatile memories. In this study, we report high-temperature tunneling electroresistance (TER) of metal/ferroelectric/semiconductor FTJs. Hysteretic resistance-voltage loops are observed in the Pt/BaTiO3/Nb:SrTiO3 tunnel junction from 300 to 513 K due to the modulation of interfacial Schottky barrier by polarization switching in the 4 u.c.-thick BaTiO3 barrier via a ferroelectric field effect. The Pt/BaTiO3/Nb:SrTiO3 device exhibits a giant ROFF/RON resistance ratio of ˜3 × 105 at 383 K and maintains bipolar resistance switching up to 513 K, suggesting excellent thermal endurance of the FTJs. The temperature-dependent TER behaviors are discussed in terms of the decrease of polarization in the BaTiO3 barrier, and the associated junction barrier profiles are deduced by transport and capacitance analyses. In addition, by extrapolating the retention time at elevated temperature in an Arrhenius-type relation, activation energy of ˜0.93 eV and room-temperature retention time of ˜70 years can be extracted.

Liquid cooling applications on automotive exterior LED lighting

NASA Astrophysics Data System (ADS)

Aktaş, Mehmet; Şenyüz, Tunç; Şenyıldız, Teoman; Kılıç, Muhsin

2018-02-01

In this study cooling of a LED unit with heatsink and liquid cooling block which is used in automotive head lamp applications has been investigated numerically and experimentally. Junction temperature of a LED which is cooled with heatsink and liquid cooling block obtained in the experiment. 23°C is used both in the simulation and the experiment phase. Liquid cooling block material is choosed aluminium (Al) and polyamide. All tests and simulation are performed with three different flow rate. Temperature distribution of the designed product is investigated by doing the numerical simulations with a commercially software. In the simulations, fluid flow is assumed to be steady, incompressible and laminar and 3 dimensional (3D) Navier-Stokes equations are used. According to the calculations it is obtained that junction temperature is higher in the heatsink design compared to block cooled one. By changing the block material, it is desired to investigate the variation on the LED junction temperature. It is found that more efficient cooling can be obtained in block cooling by using less volume and weight. With block cooling lifetime of LED can be increased and flux loss can be decreased with the result of decreased junction temperature.

Thermoelectric transport properties in graphene connected molecular junctions

NASA Astrophysics Data System (ADS)

Rodriguez, S. T.; Grosu, I.; Crisan, M.; Ţifrea, I.

2018-02-01

We study the electronic contribution to the main thermoelectric properties of a molecular junction consisting of a single quantum dot coupled to graphene external leads. The system electrical conductivity (G), Seebeck coefficient (S), and the thermal conductivity (κ), are numerically calculated based on a Green's function formalism that includes contributions up to the Hartree-Fock level. We consider the system leads to be made either of pure or gapped-graphene. To describe the free electrons in the gapped-graphene electrodes we used two possible scenarios, the massive gap scenario, and the massless gap scenario, respectively. In all cases, the Fano effect is responsible for a strong violation of the Wiedemann-Franz law and we found a substantial increase of the system figure of merit ZT due to a drastic reduction of the system thermal coefficient. In the case of gapped-graphene electrodes, the system figure of merit presents a maximum at an optimal value of the energy gap of the order of Δ / D ∼ 0.002 (massive gap scenario) and Δ / D ∼ 0.0026 (massless gap scenario). Additionally, for all cases, the system figure of merit is temperature dependent.

Oligoyne Molecular Junctions for Efficient Room Temperature Thermoelectric Power Generation.

PubMed

Sadeghi, Hatef; Sangtarash, Sara; Lambert, Colin J

2015-11-11

Understanding phonon transport at a molecular scale is fundamental to the development of high-performance thermoelectric materials for the conversion of waste heat into electricity. We have studied phonon and electron transport in alkane and oligoyne chains of various lengths and find that, due to the more rigid nature of the latter, the phonon thermal conductances of oligoynes are counterintuitively lower than that of the corresponding alkanes. The thermal conductance of oligoynes decreases monotonically with increasing length, whereas the thermal conductance of alkanes initially increases with length and then decreases. This difference in behavior arises from phonon filtering by the gold electrodes and disappears when higher-Debye-frequency electrodes are used. Consequently a molecule that better transmits higher-frequency phonon modes, combined with a low-Debye-frequency electrode that filters high-energy phonons is a viable strategy for suppressing phonon transmission through the molecular junctions. The low thermal conductance of oligoynes, combined with their higher thermopower and higher electrical conductance lead to a maximum thermoelectric figure of merit of ZT = 1.4, which is several orders of magnitude higher than that of alkanes.

Josephson junction

DOEpatents

Wendt, J.R.; Plut, T.A.; Martens, J.S.

1995-05-02

A novel method for fabricating nanometer geometry electronic devices is described. Such Josephson junctions can be accurately and reproducibly manufactured employing photolithographic and direct write electron beam lithography techniques in combination with aqueous etchants. In particular, a method is described for manufacturing planar Josephson junctions from high temperature superconducting material. 10 figs.

Inelastic effects of Josephson junctions

NASA Astrophysics Data System (ADS)

Ranjan, Samir

We have investigated the effects of the inelastic interaction of electrons with phonons in the barrier region of S-I-S and S-N-S Josephson junctions. We find that under suitable conditions this mechanism can cause substantial modifications of the temperature dependence of the critical current jsb{c} as the inevitable loss of coherence can be more than compensated by the enhancement of the tunneling probability resulting from the phonon absorption. The effect depends strongly on the ratio qsb{TF}a of the junction width a to the screening length in the barrier region. For a S-I-S junction, a monotonic decrease in the critical current with temperature is found for qsb{TF}a ≫ 1 whereas for qsb{TF}a ≪ 1, the appearance of a peak in jsb{c}(T) near Tsb{c} is predicted. This new interesting effect is the consequence of the competition between the decrease of the superconducting gap function and the increase in the number of phonons with temperature. A wide range of parameter values has been explored and contact with relevant experimental results has been made. For an S-N-S junction, there is a large increase in the coherence length in the non-superconducting region leading to a substantial enhancement of the critical current over a wide range of temperature. It turns out that the entire temperature range can be divided broadly into two regimes. At low temperatures, the electron predominantly exchanges energy with just one phonon and it is this process that mainly determines the critical current. At higher temperatures the critical current is determined by processes in which the electrons exchange energy with many phonons during their under barrier motion.

First-Order SPICE Modeling of Extreme-Temperature 4H-SiC JFET Integrated Circuits

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Spry, David J.; Chen, Liang-Yu

2016-01-01

A separate submission to this conference reports that 4H-SiC Junction Field Effect Transistor (JFET) digital and analog Integrated Circuits (ICs) with two levels of metal interconnect have reproducibly demonstrated electrical operation at 500 C in excess of 1000 hours. While this progress expands the complexity and durability envelope of high temperature ICs, one important area for further technology maturation is the development of reasonably accurate and accessible computer-aided modeling and simulation tools for circuit design of these ICs. Towards this end, we report on development and verification of 25 C to 500 C SPICE simulation models of first order accuracy for this extreme-temperature durable 4H-SiC JFET IC technology. For maximum availability, the JFET IC modeling is implemented using the baseline-version SPICE NMOS LEVEL 1 model that is common to other variations of SPICE software and importantly includes the body-bias effect. The first-order accuracy of these device models is verified by direct comparison with measured experimental device characteristics.

Thermally enhanced photoluminescence for heat harvesting in photovoltaics

PubMed Central

Manor, Assaf; Kruger, Nimrod; Sabapathy, Tamilarasan; Rotschild, Carmel

2016-01-01

The maximal Shockley–Queisser efficiency limit of 41% for single-junction photovoltaics is primarily caused by heat dissipation following energetic-photon absorption. Solar-thermophotovoltaics concepts attempt to harvest this heat loss, but the required high temperatures (T>2,000 K) hinder device realization. Conversely, we have recently demonstrated how thermally enhanced photoluminescence is an efficient optical heat-pump that operates in comparably low temperatures. Here we theoretically and experimentally demonstrate such a thermally enhanced photoluminescence based solar-energy converter. Here heat is harvested by a low bandgap photoluminescent absorber that emits thermally enhanced photoluminescence towards a higher bandgap photovoltaic cell, resulting in a maximum theoretical efficiency of 70% at a temperature of 1,140 K. We experimentally demonstrate the key feature of sub-bandgap photon thermal upconversion with an efficiency of 1.4% at only 600 K. Experiments on white light excitation of a tailored Cr:Nd:Yb glass absorber suggest that conversion efficiencies as high as 48% at 1,500 K are in reach. PMID:27762271

Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing.

PubMed

Fu, Chaochao; Zhou, Xiangbiao; Wang, Yan; Xu, Peng; Xu, Ming; Wu, Dongping; Luo, Jun; Zhao, Chao; Zhang, Shi-Li

2016-04-27

The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to obtain a high driving current. In this paper, microwave annealing is employed to modify the effective SBH of NiSi on Si via boron or arsenic dopant segregation. The barrier height decreased from 0.4-0.7 eV to 0.2-0.1 eV for both conduction polarities by annealing below 400 °C. Compared with the required temperature in traditional rapid thermal annealing, the temperature demanded in microwave annealing is ~60 °C lower, and the mechanisms of this observation are briefly discussed. Microwave annealing is hence of high interest to future semiconductor processing owing to its unique capability of forming the metal/semiconductor contact at a remarkably lower temperature.

Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing

PubMed Central

Fu, Chaochao; Zhou, Xiangbiao; Wang, Yan; Xu, Peng; Xu, Ming; Wu, Dongping; Luo, Jun; Zhao, Chao; Zhang, Shi-Li

2016-01-01

The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to obtain a high driving current. In this paper, microwave annealing is employed to modify the effective SBH of NiSi on Si via boron or arsenic dopant segregation. The barrier height decreased from 0.4–0.7 eV to 0.2–0.1 eV for both conduction polarities by annealing below 400 °C. Compared with the required temperature in traditional rapid thermal annealing, the temperature demanded in microwave annealing is ~60 °C lower, and the mechanisms of this observation are briefly discussed. Microwave annealing is hence of high interest to future semiconductor processing owing to its unique capability of forming the metal/semiconductor contact at a remarkably lower temperature. PMID:28773440

Probing transport mechanisms of BaFe2As2 superconducting films and grain boundary junctions by noise spectroscopy

PubMed Central

Barone, C.; Romeo, F.; Pagano, S.; Adamo, M.; Nappi, C.; Sarnelli, E.; Kurth, F.; Iida, K.

2014-01-01

An important step forward for the understanding of high-temperature superconductivity has been the discovery of iron-based superconductors. Among these compounds, iron pnictides could be used for high-field magnet applications, resulting more advantageous over conventional superconductors, due to a high upper critical field as well as its low anisotropy at low temperatures. However, the principal obstacle in fabricating high quality superconducting wires and tapes is given by grain boundaries. In order to study these effects, the dc transport and voltage-noise properties of Co-doped BaFe2As2 superconducting films with artificial grain boundary junctions have been investigated. A specific procedure allows the separation of the film noise from that of the junction. While the former shows a standard 1/f behaviour, the latter is characterized by an unconventional temperature-dependent multi-Lorentzian voltage-spectral density. Moreover, below the film superconducting critical temperature, a peculiar noise spectrum is found for the grain boundary junction. Possible theoretical interpretation of these phenomena is proposed. PMID:25145385

Gas selectivity of SILAR grown CdS nano-bulk junction

NASA Astrophysics Data System (ADS)

Jayakrishnan, R.; Nair, Varun G.; Anand, Akhil M.; Venugopal, Meera

2018-03-01

Nano-particles of cadmium sulphide were deposited on cleaned copper substrate by an automated sequential ionic layer adsorption reaction (SILAR) system. The grown nano-bulk junction exhibits Schottky diode behavior. The response of the nano-bulk junction was investigated under oxygen and hydrogen atmospheric conditions. The gas response ratio was found to be 198% for Oxygen and 34% for Hydrogen at room temperature. An increase in the operating temperature of the nano-bulk junction resulted in a decrease in their gas response ratio. A logarithmic dependence on the oxygen partial pressure to the junction response was observed, indicating a Temkin isothermal behavior. Work function measurements using a Kelvin probe demonstrate that the exposure to an oxygen atmosphere fails to effectively separate the charges due to the built-in electric field at the interface. Based on the benefits like simple structure, ease of fabrication and response ratio the studied device is a promising candidate for gas detection applications.

Transition from direct to inverted charge transport Marcus regions in molecular junctions via molecular orbital gating

NASA Astrophysics Data System (ADS)

Yuan, Li; Wang, Lejia; Garrigues, Alvar R.; Jiang, Li; Annadata, Harshini Venkata; Anguera Antonana, Marta; Barco, Enrique; Nijhuis, Christian A.

2018-04-01

Solid-state molecular tunnel junctions are often assumed to operate in the Landauer regime, which describes essentially activationless coherent tunnelling processes. In solution, on the other hand, charge transfer is described by Marcus theory, which accounts for thermally activated processes. In practice, however, thermally activated transport phenomena are frequently observed also in solid-state molecular junctions but remain poorly understood. Here, we show experimentally the transition from the Marcus to the inverted Marcus region in a solid-state molecular tunnel junction by means of intra-molecular orbital gating that can be tuned via the chemical structure of the molecule and applied bias. In the inverted Marcus region, charge transport is incoherent, yet virtually independent of temperature. Our experimental results fit well to a theoretical model that combines Landauer and Marcus theories and may have implications for the interpretation of temperature-dependent charge transport measurements in molecular junctions.

Thermoelectricity in atom-sized junctions at room temperatures

PubMed Central

Tsutsui, Makusu; Morikawa, Takanori; Arima, Akihide; Taniguchi, Masateru

2013-01-01

Atomic and molecular junctions are an emerging class of thermoelectric materials that exploit quantum confinement effects to obtain an enhanced figure of merit. An important feature in such nanoscale systems is that the electron and heat transport become highly sensitive to the atomic configurations. Here we report the characterization of geometry-sensitive thermoelectricity in atom-sized junctions at room temperatures. We measured the electrical conductance and thermoelectric power of gold nanocontacts simultaneously down to the single atom size. We found junction conductance dependent thermoelectric voltage oscillations with period 2e2/h. We also observed quantum suppression of thermovoltage fluctuations in fully-transparent contacts. These quantum confinement effects appeared only statistically due to the geometry-sensitive nature of thermoelectricity in the atom-sized junctions. The present method can be applied to various nanomaterials including single-molecules or nanoparticles and thus may be used as a useful platform for developing low-dimensional thermoelectric building blocks. PMID:24270238

Rectification of current responds to incorporation of fullerenes into mixed-monolayers of alkanethiolates in tunneling junctions.

PubMed

Qiu, Li; Zhang, Yanxi; Krijger, Theodorus L; Qiu, Xinkai; Hof, Patrick Van't; Hummelen, Jan C; Chiechi, Ryan C

2017-03-01

This paper describes the rectification of current through molecular junctions comprising self-assembled monolayers of decanethiolate through the incorporation of C 60 fullerene moieties bearing undecanethiol groups in junctions using eutectic Ga-In (EGaIn) and Au conducting probe AFM (CP-AFM) top-contacts. The degree of rectification increases with increasing exposure of the decanethiolate monolayers to the fullerene moieties, going through a maximum after 24 h. We ascribe this observation to the resulting mixed-monolayer achieving an optimal packing density of fullerene cages sitting above the alkane monolayer. Thus, the degree of rectification is controlled by the amount of fullerene present in the mixed-monolayer. The voltage dependence of R varies with the composition of the top-contact and the force applied to the junction and the energy of the lowest unoccupied π-state determined from photoelectron spectroscopy is consistent with the direction of rectification. The maximum value of rectification R = | J (+)/ J (-)| = 940 at ±1 V or 617 at ±0.95 V is in agreement with previous studies on pure monolayers relating the degree of rectification to the volume of the head-group on which the frontier orbitals are localized.

Reduced junction temperature and enhanced performance of high power light-emitting diodes using reduced graphene oxide pattern

NASA Astrophysics Data System (ADS)

Han, Nam; Jung, Eunjin; Han, Min; Deul Ryu, Beo; Bok Ko, Kang; Park, Young Jae; Cuong, TranViet; Cho, Jaehee; Kim, Hyunsoo; Hong, Chang-Hee

2015-07-01

Thermal management has become a crucial area for further development of high-power light-emitting didoes (LEDs) due to the high operating current densities that are required and result in additional joule heating. This increased joule heating negatively affects the performance of the LEDs since it greatly decreases both the optical performance and the lifetime. To circumvent this problem, a reduced graphene oxide (rGO) layer can be inserted to act as a heat spreader. In this study, current-voltage and light-output-current measurements are systematically performed at different temperatures from 30 to 190 °C to investigate the effect that the embedded rGO pattern has on the device performance. At a high temperature and high operating current, the junction temperature (Tj) is 23% lower and the external quantum efficiency (EQE) is 24% higher for the rGO embedded LEDs relative to those of conventional LEDs. In addition, the thermal activation energy of the rGO embedded LEDs exhibits a 30% enhancement as a function of the temperature at a bias of  -5 V. This indicates that the rGO pattern plays an essential role in decreasing the junction temperature and results in a favorable performance in terms of the temperature of the high power GaN-based LED junction.

Holographic s-wave and p-wave Josephson junction with backreaction

NASA Astrophysics Data System (ADS)

Wang, Yong-Qiang; Liu, Shuai

2016-11-01

In this paper, we study the holographic models of s-wave and p-wave Josephoson junction away from probe limit in (3+1)-dimensional spacetime, respectively. With the backreaction of the matter, we obtained the anisotropic black hole solution with the condensation of matter fields. We observe that the critical temperature of Josephoson junction decreases with increasing backreaction. In addition to this, the tunneling current and condenstion of Josephoson junction become smaller as backreaction grows larger, but the relationship between current and phase difference still holds for sine function. Moreover, condenstion of Josephoson junction deceases with increasing width of junction exponentially.

Fast temporal fluctuations in single-molecule junctions.

PubMed

Ochs, Roif; Secker, Daniel; Elbing, Mark; Mayor, Marcel; Weber, Heiko B

2006-01-01

The noise within the electrical current through single-molecule junctions is studied cryogenic temperature. The organic sample molecules were contacted with the mechanically controlled break-junction technique. The noise spectra refer to a where only few Lorentzian fluctuators occur in the conductance. The frequency dependence shows qualitative variations from sample to sample.

Performance of High Temperature Operational Amplifier, Type LM2904WH, under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad; Elbuluk, Malik

2008-01-01

Operation of electronic parts and circuits under extreme temperatures is anticipated in NASA space exploration missions as well as terrestrial applications. Exposure of electronics to extreme temperatures and wide-range thermal swings greatly affects their performance via induced changes in the semiconductor material properties, packaging and interconnects, or due to incompatibility issues between interfaces that result from thermal expansion/contraction mismatch. Electronics that are designed to withstand operation and perform efficiently in extreme temperatures would mitigate risks for failure due to thermal stresses and, therefore, improve system reliability. In addition, they contribute to reducing system size and weight, simplifying its design, and reducing development cost through the elimination of otherwise required thermal control elements for proper ambient operation. A large DC voltage gain (100 dB) operational amplifier with a maximum junction temperature of 150 C was recently introduced by STMicroelectronics [1]. This LM2904WH chip comes in a plastic package and is designed specifically for automotive and industrial control systems. It operates from a single power supply over a wide range of voltages, and it consists of two independent, high gain, internally frequency compensated operational amplifiers. Table I shows some of the device manufacturer s specifications.

High temperature current mirror amplifier

DOEpatents

Patterson, III, Raymond B.

1984-05-22

A high temperature current mirror amplifier having biasing means in the transdiode connection of the input transistor for producing a voltage to maintain the base-collector junction reversed-biased and a current means for maintaining a current through the biasing means at high temperatures so that the base-collector junction of the input transistor remained reversed-biased. For accuracy, a second current mirror is provided with a biasing means and current means on the input leg.

Disordered Supersolids in the Extended Bose-Hubbard Model

DOE PAGES

Lin, Fei; Maier, T. A.; Scarola, V. W.

2017-10-06

The extended Bose-Hubbard model captures the essential properties of a wide variety of physical systems including ultracold atoms and molecules in optical lattices, Josephson junction arrays, and certain narrow band superconductors. It exhibits a rich phase diagram including a supersolid phase where a lattice solid coexists with a superfluid. We use quantum Monte Carlo to study the supersolid part of the phase diagram of the extended Bose-Hubbard model on the simple cubic lattice. We add disorder to the extended Bose-Hubbard model and find that the maximum critical temperature for the supersolid phase tends to be suppressed by disorder. But wemore » also find a narrow parameter window in which the supersolid critical temperature is enhanced by disorder. Our results show that supersolids survive a moderate amount of spatial disorder and thermal fluctuations in the simple cubic lattice.« less

Large voltage modulation in superconducting quantum interference devices with submicron-scale step-edge junctions

NASA Astrophysics Data System (ADS)

Lam, Simon K. H.

2017-09-01

A promising direction to improve the sensitivity of a SQUID is to increase its junction's normal resistance value, Rn, as the SQUID modulation voltage scales linearly with Rn. As a first step to develop highly sensitive single layer SQUID, submicron scale YBCO grain boundary step edge junctions and SQUIDs with large Rn were fabricated and studied. The step-edge junctions were reduced to submicron scale to increase their Rn values using focus ion beam, FIB and the measurement of transport properties were performed from 4.3 to 77 K. The FIB induced deposition layer proves to be effective to minimize the Ga ion contamination during the FIB milling process. The critical current-normal resistance value of submicron junction at 4.3 K was found to be 1-3 mV, comparable to the value of the same type of junction in micron scale. The submicron junction Rn value is in the range of 35-100 Ω, resulting a large SQUID modulation voltage in a wide temperature range. This performance promotes further investigation of cryogen-free, high field sensitivity SQUID applications at medium low temperature, e.g. at 40-60 K.

Schottky junction interfacial properties at high temperature: A case of AgNWs embedded metal oxide/p-Si

NASA Astrophysics Data System (ADS)

Mahala, Pramila; Patel, Malkeshkumar; Gupta, Navneet; Kim, Joondong; Lee, Byung Ha

2018-05-01

Studying the performance limiting parameters of the Schottky device is an urgent issue, which are addressed herein by thermally stable silver nanowire (AgNW) embedded metal oxide/p-Si Schottky device. Temperature and bias dependent junction interfacial properties of AgNW-ITO/Si Schottky photoelectric device are reported. The current-voltage-temperature (I-V-T), capacitance-voltage-temperature (C-V-T) and impedance analysis have been carried out in the high-temperature region. The ideality factor and barrier height of Schottky junction are assessed using I-V-T characteristics and thermionic emission, to reveal the decrease of ideality factor and increase of barrier height by the increasing of temperature. The extracted values of laterally homogeneous Schottky (ϕb) and ideality factor (n) are approximately 0.73 eV and 1.58, respectively. Series resistance (Rs) assessed using Cheung's method and found that it decreases with the increase of temperature. A linear response of Rs of AgNW-ITO/Si Schottky junction is observed with respect to change in forward bias, i.e. dRS/dV from 0 to 0.7 V is in the range of 36.12-36.43 Ω with a rate of 1.44 Ω/V. Impedance spectroscopy is used to study the effect of bias voltage and temperature on intrinsic Schottky properties which are responsible for photoconversion efficiency. These systematic analyses are useful for the AgNWs-embedding Si solar cells or photoelectrochemical cells.

(Al)GaInP/GaAs Tandem Solar Cells for Power Conversion at Elevated Temperature and High Concentration

DOE PAGES

Perl, Emmett E.; Simon, John; Friedman, Daniel J.; ...

2018-01-12

We demonstrate dual-junction (Al)GaInP/GaAs solar cells designed for operation at 400 degrees C and 1000x concentration. For the top junction, we compare (Al)GaInP solar cells with room-temperature bandgaps ranging from 1.9 to 2.0 eV. At 400 degrees C, we find that ~1.9 eV GaInP solar cells have a higher open-circuit voltage and a lower sheet resistance than higher bandgap (Al)GaInP solar cells, giving them a clear advantage in a tandem configuration. Dual-junction GaInP/GaAs solar cells are fabricated, and we show temperature-dependent external quantum efficiency, illuminated current-voltage, and concentrator measurements from 25 degrees C to 400 degrees C. We measure amore » power conversion efficiency of 16.4% +/- 1% at 400 degrees C and 345 suns for the best dual-junction cell, and discuss multiple pathways to improve the performance further. After undergoing a 200 h soak at 400 degrees C, the dual-junction device shows a relative loss in efficiency of only ~1%.« less

Sensitive thermal microsensor with pn junction for heat measurement of a single cell

NASA Astrophysics Data System (ADS)

Yamada, Taito; Inomata, Naoki; Ono, Takahito

2016-02-01

A sensitive thermal microsensor based on a pn junction diode for heat measurements of biological single cells is developed and evaluated. Using a fabricated device, we demonstrated the heat measurement of a single brown fat cell. The principle of the sensor relies on the temperature dependence of the pn junction diode resistance. This method has a capability of the highly thermal sensitivity by downsizing and the advantage of a simple experimental setup using electrical circuits without any special equipment. To achieve highly sensitive heat measurement of single cells, downsizing of the sensor is necessary to reduce the heat capacity of the sensor itself. The sensor with the pn junction diode can be downsized by microfabrication. A bridge beam structure with the pn junction diode as a thermal sensor is placed in vacuum using a microfludic chip to decrease the heat loss to the surroundings. A temperature coefficient of resistance of 1.4%/K was achieved. The temperature and thermal resolutions of the fabricated device are 1.1 mK and 73.6 nW, respectively. The heat measurements of norepinephrine stimulated and nonstimulated single brown fat cells were demonstrated, and different behaviors in heat generation were observed.

(Al)GaInP/GaAs Tandem Solar Cells for Power Conversion at Elevated Temperature and High Concentration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perl, Emmett E.; Simon, John; Friedman, Daniel J.

We demonstrate dual-junction (Al)GaInP/GaAs solar cells designed for operation at 400 degrees C and 1000x concentration. For the top junction, we compare (Al)GaInP solar cells with room-temperature bandgaps ranging from 1.9 to 2.0 eV. At 400 degrees C, we find that ~1.9 eV GaInP solar cells have a higher open-circuit voltage and a lower sheet resistance than higher bandgap (Al)GaInP solar cells, giving them a clear advantage in a tandem configuration. Dual-junction GaInP/GaAs solar cells are fabricated, and we show temperature-dependent external quantum efficiency, illuminated current-voltage, and concentrator measurements from 25 degrees C to 400 degrees C. We measure amore » power conversion efficiency of 16.4% +/- 1% at 400 degrees C and 345 suns for the best dual-junction cell, and discuss multiple pathways to improve the performance further. After undergoing a 200 h soak at 400 degrees C, the dual-junction device shows a relative loss in efficiency of only ~1%.« less

Improvement of heavy dopant doped Ni-silicide using ytterbium interlayer for nano-scale MOSFETS with an ultra shallow junction.

PubMed

Shin, Hong-Sik; Oh, Se-Kyung; Kang, Min-Ho; Li, Shi-Guang; Lee, Ga-Won; Lee, Hi-Deok

2011-07-01

In this paper, a novel Ni silicide with Yb interlayer (Yb/Ni/TiN) on a boron cluster (B18H22) implanted source/drain junction is proposed for the first time, and its thermal stability characteristics are analyzed in depth. The proposed Ni-silicide exhibits a wider RTP temperature window for uniform sheet resistance, surface roughness and better thermal stability than the conventional structure (Ni/TiN). In addition, the cross-sectional profile of the proposed Ni-silicide showed less agglomeration despite the high temperature post-silicidation annealing, and it can be said that the proposed structure was little dependence on the temperature post-silicidation annealing. The improvement of Ni silicide properties is analyzed and found to be due to the formation of the rare earth metal--NiSi (YbNi2Si2), whose peaks were confirmed by XRD. The junction leakage current of the p + -n junction with Yb/Ni/TiN and B18H22 implantation is smaller than that with Ni/TiN by almost one order of magnitude as well as improving the thermal stability of ultra shallow junction.

High-T(sub c) Superconductor-Normal-Superconductor Junctions with Polyimide-Passivated Ambient Temperature Edge Formation

NASA Technical Reports Server (NTRS)

Barner, J. B.; Kleinsasser, A. W.; Hunt, B. D.

1996-01-01

The ability to controllably fabricate High-Temperature Superconductor (HTS) S-Normal-S (SNS) Josephson Juntions (JJ's) enhances the possibilities fro many applications, including digital circuits, SQUID's, and mixers. A wide variety of approaches to fabricating SNS-like junctions has been tried and analyzed in terms of proximity effect behavior.

NbN/MgO/NbN edge-geometry tunnel junctions

NASA Technical Reports Server (NTRS)

Hunt, B. D.; Leduc, H. G.; Cypher, S. R.; Stern, J. A.; Judas, A.

1989-01-01

The fabrication and low-frequency testing of the first edge-geometry NbN/MgO/NbN superconducting tunnel junctions are reported. The use of an edge geometry allows very small junction areas to be obtained, while the all-NbN electrodes permit operation at 8-10 K with a potential maximum operating frequency above 1 THz. Edge definition in the base NbN film was accomplished utilizing Ar ion milling with an Al2O3 milling mask, followed by a lower energy ion cleaning step. This process has produced all-refractory-material tunnel junctions with areas as small as 0.1 sq micron, resistance-area products less than 21 ohm sq micron, and subgap to normal state resistance ratios larger than 18.

Probing the nature and resistance of the molecule-electrode contact in SAM-based junctions.

PubMed

Sangeeth, C S Suchand; Wan, Albert; Nijhuis, Christian A

2015-07-28

It is challenging to quantify the contact resistance and to determine the nature of the molecule-electrode contacts in molecular two-terminal junctions. Here we show that potentiodynamic and temperature dependent impedance measurements give insights into the nature of the SAM-electrode interface and other bottlenecks of charge transport (the capacitance of the SAM (C(SAM)) and the resistance of the SAM (R(SAM))), unlike DC methods, independently of each other. We found that the resistance of the top-electrode-SAM contact for junctions with the form of Ag(TS)-SC(n)//GaO(x)/EGaIn with n = 10, 12, 14, 16 or 18 is bias and temperature independent and hence Ohmic (non-rectifying) in nature, and is orders of magnitude smaller than R(SAM). The C(SAM) and R(SAM) are independent of the temperature, indicating that the mechanism of charge transport in these SAM-based junctions is coherent tunneling and the charge carrier trapping at the interfaces is negligible.

Applications and non-idealities of submicron Al-AlOx-Nb tunnel junctions

NASA Astrophysics Data System (ADS)

Julin, J. K.; Maasilta, I. J.

2016-10-01

We have developed a technique to fabricate sub-micron, 0.6 μ {{m}}× 0.6 μ {{m}} Al-AlOx-Nb tunnel junctions using a standard e-beam resist, angle evaporation and double oxidation of the tunneling barrier, resulting in high quality niobium, as determined by the the high measured values of the critical temperature {T}{{C}}˜ 7.5 K and the gap {{Δ }}˜ 1.3 meV. The devices show great promise for local nanoscale thermometry in the temperature range 1-7.5 K. Electrical characterization of the junctions was performed at sub-Kelvin temperatures both with and without an external magnetic field, which was used to suppress superconductivity in Al and thus bring the junction into a normal-metal-insulator-superconductor configuration. We observed excess sub-gap current, which could not be explained by the standard tunneling theory. Evidence points towards materials science issues of the barrier or Nb/AlOx interface as the culprit.

Thermopower of molecular junctions: Tunneling to hopping crossover in DNA

NASA Astrophysics Data System (ADS)

Korol, Roman; Kilgour, Michael; Segal, Dvira

2016-12-01

We study the electrical conductance G and the thermopower S of single-molecule junctions and reveal signatures of different transport mechanisms: off-resonant tunneling, on-resonant coherent (ballistic) motion, and multi-step hopping. These mechanisms are identified by studying the behavior of G and S while varying molecular length and temperature. Based on a simple one-dimensional model for molecular junctions, we derive approximate expressions for the thermopower in these different regimes. Analytical results are compared to numerical simulations, performed using a variant of Büttiker's probe technique, the so-called voltage-temperature probe, which allows us to phenomenologically introduce environmentally induced elastic and inelastic electron scattering effects, while applying both voltage and temperature biases across the junction. We further simulate the thermopower of GC-rich DNA sequences with mediating A:T blocks and manifest the tunneling-to-hopping crossover in both the electrical conductance and the thermopower, in accord with measurements by Li et al. [Nat. Commun. 7, 11294 (2016)].

Naturally formed graded junction for organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Shao, Yan; Yang, Yang

2003-09-01

In this letter, we report naturally-formed graded junctions (NFGJ) for organic light-emitting diodes (OLEDs). These junctions are fabricated using single thermal evaporation boat loaded with uniformly mixed charge transport and light-emitting materials. Upon heating, materials sublimate sequentially according to their vaporizing temperatures forming the graded junction. Two kinds of graded structures, sharp and shallow graded junctions, can be formed based on the thermal properties of the selected materials. The NFGJ OLEDs have shown excellent performance in both brightness and lifetime compared with heterojunction devices.

Low temperature junction growth using hot-wire chemical vapor deposition

DOEpatents

Wang, Qi; Page, Matthew; Iwaniczko, Eugene; Wang, Tihu; Yan, Yanfa

2014-02-04

A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

A thin polymer insulator for Josephson tunneling applications

NASA Technical Reports Server (NTRS)

Wilmsen, C. M.

1973-01-01

The use of an organic monolayer formed from a vapor as an insulating barrier for thin film Josephson junctions is considered, and the effect of an organic monolayer on the transition temperature of a thin film superconductor is investigated. Also analyzed are the geometric factors which influence Josephson junctions and Josephson junction interferometers.

Four photon parametric amplification. [in unbiased Josephson junction

NASA Technical Reports Server (NTRS)

Parrish, P. T.; Feldman, M. J.; Ohta, H.; Chiao, R. Y.

1974-01-01

An analysis is presented describing four-photon parametric amplification in an unbiased Josephson junction. Central to the theory is the model of the Josephson effect as a nonlinear inductance. Linear, small signal analysis is applied to the two-fluid model of the Josephson junction. The gain, gain-bandwidth product, high frequency limit, and effective noise temperature are calculated for a cavity reflection amplifier. The analysis is extended to multiple (series-connected) junctions and subharmonic pumping.

Room temperature polariton light emitting diode with integrated tunnel junction.

PubMed

Brodbeck, S; Jahn, J-P; Rahimi-Iman, A; Fischer, J; Amthor, M; Reitzenstein, S; Kamp, M; Schneider, C; Höfling, S

2013-12-16

We present a diode incorporating a large number (12) of GaAs quantum wells that emits light from exciton-polariton states at room temperature. A reversely biased tunnel junction is placed in the cavity region to improve current injection into the device. Electroluminescence studies reveal two polariton branches which are spectrally separated by a Rabi splitting of 6.5 meV. We observe an anticrossing of the two branches when the temperature is lowered below room temperature as well as a Stark shift of both branches in a bias dependent photoluminescence measurement.

Pure spin current and phonon thermoelectric transport in a triangulene-based molecular junction.

PubMed

Wang, Qiang; Li, Jianwei; Nie, Yihang; Xu, Fuming; Yu, Yunjin; Wang, Bin

2018-06-13

The experimental synthesis and characterization of enigmatic triangulene were reported for the first time recently. Based on this enigmatic molecule, we proposed a triangulene-based molecular junction and presented first principles calculations to investigate the electron and phonon thermoelectric transport properties. Numerical results show that the spin polarized electric transport properties of the triangulene-based molecular junction can be adjusted effectively by bias voltage and gate voltage. Through varying the gate voltage applied on the triangulene molecule, the system can exhibit a perfect spin filter effect. When a temperature gradient is applied between the two leads, spin up current and spin down current flow along opposite directions in the system simultaneously. Thus pure spin current can be obtained on a large scale by changing the temperature, temperature gradient, and gate voltage. When the phonon vibration effect is considered in thermal transport, the figure of merit is suppressed distinctively especially when the temperature is within the 10 K < T < 100 K range. More importantly, a large spin figure of merit can be achieved accompanied by a small charge figure of merit by adjusting the temperature, gate voltage and chemical potential in a wide range, which indicates a favorable application prospect of the triangulene-based molecular junction as a spin calorigenic device.

High temperature current mirror amplifier

DOEpatents

Patterson, R.B. III.

1984-05-22

Disclosed is a high temperature current mirror amplifier having biasing means in the transdiode connection of the input transistor for producing a voltage to maintain the base-collector junction reversed-biased and a current means for maintaining a current through the biasing means at high temperatures so that the base-collector junction of the input transistor remained reversed-biased. For accuracy, a second current mirror is provided with a biasing means and current means on the input leg. 2 figs.

Existence of negative differential thermal conductance in one-dimensional diffusive thermal transport

NASA Astrophysics Data System (ADS)

Hu, Jiuning; Chen, Yong P.

2013-06-01

We show that in a finite one-dimensional (1D) system with diffusive thermal transport described by the Fourier's law, negative differential thermal conductance (NDTC) cannot occur when the temperature at one end is fixed and there are no abrupt junctions. We demonstrate that NDTC in this case requires the presence of junction(s) with temperature-dependent thermal contact resistance (TCR). We derive a necessary and sufficient condition for the existence of NDTC in terms of the properties of the TCR for systems with a single junction. We show that under certain circumstances we even could have infinite (negative or positive) differential thermal conductance in the presence of the TCR. Our predictions provide theoretical basis for constructing NDTC-based devices, such as thermal amplifiers, oscillators, and logic devices.

Enhanced Andreev reflection in gapped graphene

NASA Astrophysics Data System (ADS)

Majidi, Leyla; Zareyan, Malek

2012-08-01

We theoretically demonstrate unusual features of superconducting proximity effect in gapped graphene that presents a pseudospin symmetry-broken ferromagnet with a net pseudomagnetization. We find that the presence of a band gap makes the Andreev conductance of graphene superconductor/pseudoferromagnet (S/PF) junction to behave similar to that of a graphene ferromagnet-superconductor junction. The energy gap ΔN can enhance the pseudospin inverted Andreev conductance of S/PF junction to reach a limiting maximum value for ΔN≫μ, which depending on the bias voltage can be larger than the value for the corresponding junction with no energy gap. We further demonstrate a damped-oscillatory behavior for the local density of states of the PF region of S/PF junction and a long-range crossed Andreev reflection process in PF/S/PF structure with antiparallel alignment of pseudomagnetizations of PFs, which confirm that, in this respect, the gapped normal graphene behaves like a ferromagnetic graphene.

Thermocouple, multiple junction reference oven

NASA Technical Reports Server (NTRS)

Leblanc, L. P. (Inventor)

1981-01-01

An improved oven for maintaining the junctions of a plurality of reference thermocouples at a common and constant temperature is described. The oven is characterized by a cylindrical body defining a heat sink with axially extended-cylindrical cavity a singularized heating element which comprises a unitary cylindrical heating element consisting of a resistance heating coil wound about the surface of metallic spool with an axial bore defined and seated in the cavity. Other features of the oven include an annular array of radially extended bores defined in the cylindrical body and a plurality of reference thermocouple junctions seated in the bores in uniformly spaced relation with the heating element, and a temperature sensing device seated in the axial bore for detecting temperature changes as they occur in the spool and circuit to apply a voltage across the coil in response to detected drops in temperatures of the spool.

New processes and materials for ultraviolet detection with solid state devices

NASA Technical Reports Server (NTRS)

Chopra, D.

1977-01-01

The three major effects that degrade external responsivity of silicon from the 1/lambda theoretical curve for a quantum detector are: surface reflectance, surface recombination, and junction depth. Since the p-n junction must be very shallow, problems relating to surface are further enhanced. MOS type of processing is necessary. HCl oxides and numerous acid clean-ups are utilized in order to obtain a contamination free surface with low Qss levels. Stringent process controls such as CV shifts, spreading resistance measurements, thickness monitoring etc., are used to analyze the surface contaminations, surface mobile charges, surface concentrations, junction depth, oxide thickness etc. Low surface concentrations of 10 to the 18th atoms/cu cm are achieved by low temperature boron nitride depositions. Shallow junction depths of the order of a few tenths of a micron are achieved by low temperature controlled diffusions. In order to improve breakdown characteristics of these shallow junction devices, field plate and deep diffused p(+) ring geometries are used.

Aging behavior of Au-based ohmic contacts to GaAs

NASA Technical Reports Server (NTRS)

Fatemi, Navid S.

1989-01-01

Gold based alloys, commonly used as ohmic contacts for solar cells, are known to react readily with GaAs. It is shown that the contact interaction with the underlying GaAs can continue even at room temperature upon aging, altering both the electrical characteristics of the contacts and the nearby pn junction. Au-Ge-Ni as-deposited (no heat-treatment) contacts made to thin emitter (0.15 microns) GaAs diodes have shown severe shunting of the pn junction upon aging for several months at room temperature. The heat-treated contacts, despite showing degradation in contact resistance, did not affect the underlying pn junction. Au-Zn-Au contacts to p-GaAs emitter (0.2 microns) diodes, however, showed slight improvement in contact resistance upon 200 C isothermal annealing for several months, without degrading the pn junction. The effect of aging on electrical characteristics of the as-deposited and heat-treated contacts and the nearby pn junction, as well as on the surface morphology of the contacts are presented.

Aging behavior of Au-based ohmic contacts to GaAs

NASA Technical Reports Server (NTRS)

Fatemi, Navid S.

1988-01-01

Gold based alloys, commonly used as ohmic contacts for solar cells, are known to react readily with GaAs. It is shown that the contact interaction with the underlying GaAs can continue even at room temperature upon aging, altering both the electrical characteristics of the contacts and the nearby pn junction. Au-Ge-Ni as-deposited (no heat treatment) contacts made to thin emitter (0.15 micrometer) GaAs diodes have shown severe shunting of the pn junction upon aging for several months at room temperature. The heat-treated contacts, despite showing degradation in contact resistance did not affect the underlying pn junction. Au-Zn-Au contacts to p-GaAs emitter (0.2 micrometer) diodes, however, showed slight improvement in contact resistance upon 200 C isothermal annealing for several months, without degrading the pn junction. The effect of aging on electrical characteristics of the as-deposited and heat-treated contacts and the nearby pn junction, as well as on the surface morphology of the contacts are presented.

Submicron nickel-oxide-gold tunnel diode detectors for rectennas

NASA Technical Reports Server (NTRS)

Hoofring, A. B.; Kapoor, V. J.; Krawczonek, W.

1989-01-01

The characteristics of a metal-oxide-metal (MOM) tunnel diode made of nickel, nickel-oxide, and gold, designed and fabricated by standard integrated circuit technology for use in FIR rectennas, are presented. The MOM tunnel diode was formed by overlapping a 0.8-micron-wide layer of 1000-A of nickel, which was oxidized to form a thin layer of nickel oxide, with a 1500 A-thick layer of gold. The dc current-voltage characteristics of the MOM diode showed that the current dependence on voltage was linear about zero bias up to a bias of about 70 mV. The maximum detection of a low-level signal (10-mV ac) was determined to be at a dc voltage of 70 mV across the MOM diode. The rectified output signal due to a chopped 10.6-micron CO2 laser incident upon the rectenna device was found to increase with dc bias, with a maximum value of 1000 nV for a junction bias of 100 mV at room temperature.

Small area silicon diffused junction X-ray detectors

NASA Technical Reports Server (NTRS)

Walton, J. T.; Pehl, R. H.; Larsh, A. E.

1982-01-01

The low-temperature performance of silicon diffused junction detectors in the measurement of low energy X-rays is reported. The detectors have an area of 0.04 sq cm and a thickness of 100 microns. The spectral resolutions of these detectors were found to be in close agreement with expected values, indicating that the defects introduced by the high-temperature processing required in the device fabrication were not deleteriously affecting the detection of low-energy X-rays. Device performance over a temperature range of 77 K to 150 K is given. These detectors were designed to detect low-energy X-rays in the presence of minimum ionizing electrons. The successful application of silicon-diffused junction technology to X-ray detector fabrication may facilitate the development of other novel silicon X-ray detector designs.

Excess junction current of silicon solar cells

NASA Technical Reports Server (NTRS)

Wang, E. Y.; Legge, R. N.; Christidis, N.

1973-01-01

The current-voltage characteristics of n(plus)-p silicon solar cells with 0.1, 1.0, 2.0, and 10 ohm-cm p-type base materials have been examined in detail. In addition to the usual I-V measurements, we have studied the temperature dependence of the slope of the I-V curve at the origin by the lock-in technique. The excess junction current coefficient (Iq) deduced from the slope at the origin depends on the square root of the intrinsic carrier concentration. The Iq obtained from the I-V curve fitting over the entire forward bias region at various temperatures shows the same temperature dependence. This result, in addition to the presence of an aging effect, suggest that the surface channel effect is the dominant cause of the excess junction current.

Josephson-like spin current in junctions composed of antiferromagnets and ferromagnets

NASA Astrophysics Data System (ADS)

Moor, A.; Volkov, A. F.; Efetov, K. B.

2012-01-01

We study Josephson-like junctions formed by materials with antiferromagnetic (AF) order parameters. As an antiferromagnet, we consider a two-band material in which a spin density wave (SDW) arises. This could be Fe-based pnictides in the temperature interval Tc≤T≤TN, where Tc and TN are the critical temperatures for the superconducting and antiferromagnetic transitions, respectively. The spin current jSp in AF/F/AF junctions with a ballistic ferromagnetic layer and in tunnel AF/I/AF junctions is calculated. It depends on the angle between the magnetization vectors in the AF leads in the same way as the Josephson current depends on the phase difference of the superconducting order parameters in S/I/S tunnel junctions. It turns out that in AF/F/AF junctions, two components of the SDW order parameter are induced in the F layer. One of them oscillates in space with a short period ξF,b˜ℏv/H, while the other decays monotonously from the interfaces over a long distance of the order ξN,b=ℏv/2πT (where v, H, and T are the Fermi velocity, the exchange energy, and the temperature, respectively; the subindex “b” denotes the ballistic case). This is a clear analogy with the case of Josephson S/F/S junctions with a nonhomogeneous magnetization where short- and long-range condensate components are induced in the F layer. However, in contrast to the charge Josephson current in S/F/S junctions, the spin current in AF/F/AF junctions is not constant in space, but oscillates in the ballistic F layer. We also calculate the dependence of jSp on the deviation from the ideal nesting in the AF/I/AF junctions. The spin current is maximal in the insulating phase of the AF and decreases in the metallic phase. It turns to zero at the Neel point when the amplitude of the SDW is zero and changes sign for certain values of the detuning parameter.

Limitations in cooling electrons using normal-metal-superconductor tunnel junctions.

PubMed

Pekola, J P; Heikkilä, T T; Savin, A M; Flyktman, J T; Giazotto, F; Hekking, F W J

2004-02-06

We demonstrate both theoretically and experimentally two limiting factors in cooling electrons using biased tunnel junctions to extract heat from a normal metal into a superconductor. First, when the injection rate of electrons exceeds the internal relaxation rate in the metal to be cooled, the electrons do not obey the Fermi-Dirac distribution, and the concept of temperature cannot be applied as such. Second, at low bath temperatures, states within the gap induce anomalous heating and yield a theoretical limit of the achievable minimum temperature.

Process research of non-Cz material

NASA Astrophysics Data System (ADS)

Campbell, R. B.

1985-06-01

Efforts were aimed at achieving a simultaneous front and back junction. Lasers and other heat sources were tried. Successful results were gained by two different methods: laser and flash lamp. Polymer dopants were applied to both sides of dendritic web cells. Rapid heating and cooling avoided any cross contamination between two junctions after removal of the dendrites. Both methods required subsequent thermal annealing in an oven to produce maximum efficiency cells.

Simulation and measurement of a Ka-band HTS MMIC Josephson junction mixer

NASA Astrophysics Data System (ADS)

Zhang, Ting; Pegrum, Colin; Du, Jia; Guo, Yingjie Jay

2017-01-01

We report modeling and simulation results for a Ka band high-temperature superconducting (HTS) monolithic microwave integrated circuit (MMIC) Josephson junction mixer. A Verilog-A model of a Josephson junction is established and imported into the system simulator to realize a full HTS MMIC circuit simulation containing the HTS passive circuit models. Impedance matching optimization between the junction and passive devices is investigated. Junction DC I-V characteristics, current and local oscillator bias conditions and mixing performance are simulated and compared with the experimental results. Good agreement is obtained between the simulation and measurement results.

Macroscopic Quantum Tunneling in Superconducting Junctions of β-Ag2Se Topological Insulator Nanowire.

PubMed

Kim, Jihwan; Kim, Bum-Kyu; Kim, Hong-Seok; Hwang, Ahreum; Kim, Bongsoo; Doh, Yong-Joo

2017-11-08

We report on the fabrication and electrical transport properties of superconducting junctions made of β-Ag 2 Se topological insulator (TI) nanowires in contact with Al superconducting electrodes. The temperature dependence of the critical current indicates that the superconducting junction belongs to a short and diffusive junction regime. As a characteristic feature of the narrow junction, the critical current decreases monotonously with increasing magnetic field. The stochastic distribution of the switching current exhibits the macroscopic quantum tunneling behavior, which is robust up to T = 0.8 K. Our observations indicate that the TI nanowire-based Josephson junctions can be a promising building block for the development of nanohybrid superconducting quantum bits.

Arrays of Nano Tunnel Junctions as Infrared Image Sensors

NASA Technical Reports Server (NTRS)

Son, Kyung-Ah; Moon, Jeong S.; Prokopuk, Nicholas

2006-01-01

Infrared image sensors based on high density rectangular planar arrays of nano tunnel junctions have been proposed. These sensors would differ fundamentally from prior infrared sensors based, variously, on bolometry or conventional semiconductor photodetection. Infrared image sensors based on conventional semiconductor photodetection must typically be cooled to cryogenic temperatures to reduce noise to acceptably low levels. Some bolometer-type infrared sensors can be operated at room temperature, but they exhibit low detectivities and long response times, which limit their utility. The proposed infrared image sensors could be operated at room temperature without incurring excessive noise, and would exhibit high detectivities and short response times. Other advantages would include low power demand, high resolution, and tailorability of spectral response. Neither bolometers nor conventional semiconductor photodetectors, the basic detector units as proposed would partly resemble rectennas. Nanometer-scale tunnel junctions would be created by crossing of nanowires with quantum-mechanical-barrier layers in the form of thin layers of electrically insulating material between them (see figure). A microscopic dipole antenna sized and shaped to respond maximally in the infrared wavelength range that one seeks to detect would be formed integrally with the nanowires at each junction. An incident signal in that wavelength range would become coupled into the antenna and, through the antenna, to the junction. At the junction, the flow of electrons between the crossing wires would be dominated by quantum-mechanical tunneling rather than thermionic emission. Relative to thermionic emission, quantum mechanical tunneling is a fast process.

Experimental Evidence for Quantum Interference and Vibrationally Induced Decoherence in Single-Molecule Junctions

NASA Astrophysics Data System (ADS)

Ballmann, Stefan; Härtle, Rainer; Coto, Pedro B.; Elbing, Mark; Mayor, Marcel; Bryce, Martin R.; Thoss, Michael; Weber, Heiko B.

2012-08-01

We analyze quantum interference and decoherence effects in single-molecule junctions both experimentally and theoretically by means of the mechanically controlled break junction technique and density-functional theory. We consider the case where interference is provided by overlapping quasidegenerate states. Decoherence mechanisms arising from electronic-vibrational coupling strongly affect the electrical current flowing through a single-molecule contact and can be controlled by temperature variation. Our findings underline the universal relevance of vibrations for understanding charge transport through molecular junctions.

Experimental evidence for quantum interference and vibrationally induced decoherence in single-molecule junctions.

PubMed

Ballmann, Stefan; Härtle, Rainer; Coto, Pedro B; Elbing, Mark; Mayor, Marcel; Bryce, Martin R; Thoss, Michael; Weber, Heiko B

2012-08-03

We analyze quantum interference and decoherence effects in single-molecule junctions both experimentally and theoretically by means of the mechanically controlled break junction technique and density-functional theory. We consider the case where interference is provided by overlapping quasidegenerate states. Decoherence mechanisms arising from electronic-vibrational coupling strongly affect the electrical current flowing through a single-molecule contact and can be controlled by temperature variation. Our findings underline the universal relevance of vibrations for understanding charge transport through molecular junctions.

Josephson-junction array in an irrational magnetic field: A superconducting glass

DOE Office of Scientific and Technical Information (OSTI.GOV)

Halsey, T.C.

1985-08-26

A model is used to show that a Josephson junction array in an irrational magnetic field undergoes a glass transition for finite cooling rate. At zero temperature the resultant glassy state possesses a nonzero critical current. The low-temperature behavior of the system can be modeled by a spin-wave theory. The relevance of these results for real experiments on arrays is discussed.

InP tunnel junctions for InP/InGaAs tandem solar cells

NASA Technical Reports Server (NTRS)

Vilela, Mauro F.; Freundlich, Alex; Renaud, P.; Medelci, N.; Bensaoula, A.

1996-01-01

We report, for the first time, an epitaxially grown InP p(+)/n(++) tunnel junction. A diode with peak current densities up to 1600 A/cm and maximum specific resistivities (Vp/Ip - peak voltage to peak current ratio) in the range of 10(exp -4)Omega cm(exp 2) is obtained. This peak current density is comparable to the highest results previously reported for lattice matched In(0.53)Ga(0.47)As tunnel junctions. Both results were obtained using chemical beam epitaxy (CBE). In this paper we discuss the electrical characteristics of these tunnel diodes and how the growth conditions influence them.

InP Tunnel Junctions for InP/InGaAs Tandem Solar Cells

NASA Technical Reports Server (NTRS)

Vilela, M. F.; Medelci, N.; Bensaoula, A.; Freundlich, A.; Renaud, P.

1995-01-01

We report, for the first time, an epitaxially grown InP p(+)/n(++) tunnel junction. A diode with peak current densities up to 1600 Al/sq cm and maximum specific resistivities (Vp/lp - peak voltage to peak current ratio) in the range of 10(exp -4)Om sq cm is obtained. This peak current density is comparable to the highest results previously reported for lattice matched In(0.53)Ga(0.47)As tunnel junctions. Both results were obtained using chemical beam epitaxy (CBE). In this paper we discuss the electrical characteristics of these tunnel diodes and how the growth conditions influence them.

Performance analysis of InGaAs/GaAsP heterojunction double gate tunnel field effect transistor

NASA Astrophysics Data System (ADS)

Ahish, S.; Sharma, Dheeraj; Vasantha, M. H.; Kumar, Y. B. N.

2017-03-01

In this paper, analog/RF performance of InGaAs/GaAsP heterojunction double gate tunnel field effect transistor (HJTFET) has been explored. A highly doped n+ layer is placed at the Source-Channel junction in order to improve the horizontal electric field component and thus, improve the realiability of the device. The analog performance of the device is analysed by extracting current-voltage characteristics, transcondutance (gm), gate-to-drain capacitance (Cgd) and gate-to-source capacitance (Cgs). Further, RF performance of the device is evaluated by obtaining cut-off frequency (fT) and Gain Bandwidth (GBW) product. ION /IOFF ratio equal to ≈ 109, subthreshold slope of 27 mV/dec, maximum fT of 2.1 THz and maximum GBW of 484 GHz were achieved. Also, the impact of temperature variation on the linearity performance of the device has been investigated. Furthermore, the circuit level performance of the device is performed by implementing a Common Source (CS) amplifier; maximum gain of 31.11 dB and 3-dB cut-off frequency equal to 91.2 GHz were achieved for load resistance (RL) = 17.5 KΩ.

Optoelectronic properties of novel amorphous CuAlO2/ZnO NWs based heterojunction

NASA Astrophysics Data System (ADS)

Bu, Ian Y. Y.

2013-08-01

Amorphous p-type CuAlO2 thin films were grown onto n-type crystalline ZnO NWs forming a heterojunction through the combination of sol-gel process and hydrothermal growth method. The effects of temperature on structure and optoelectronic properties of CuAlO2 thin films were investigated through various measurement techniques. It was found that the derived CuAlO2 is Al-rich with thin film. UV-Vis measurements showed that the deposited CuAlO2 films are semi-transparent with maximum transmittance ∼82% at 500 nm. Electrical characterization and integration into pn junction confirms that the amorphous CuAlO2 is p-type and exhibited photovoltaic behavior.

On-chip very low junction temperature GaN-based light emitting diodes by selective ion implantation

NASA Astrophysics Data System (ADS)

Cheng, Yun-Wei; Chen, Hung-Hsien; Ke, Min-Yung; Chen, Cheng-Pin; Huang, JianJang

2008-08-01

We propose an on-wafer heat relaxation technology by selectively ion-implanted in part of the p-type GaN to decrease the junction temperature in the LED structure. The Si dopant implantation energy and concentration are characterized to exhibit peak carrier density 1×1018 cm-3 at the depth of 137.6 nm after activation in nitrogen ambient at 750 °C for 30 minutes. The implantation schedule is designed to neutralize the selected region or to create a reverse p-n diode in the p-GaN layer, which acts as the cold zone for heat dissipation. The cold zone with lower effective carrier concentration and thus higher resistance is able to divert the current path. Therefore, the electrical power consumption through the cold zone was reduced, resulting in less optical power emission from the quantum well under the cold zone. Using the diode forward voltage method to extract junction temperature, when the injection current increases from 10 to 60 mA, the junction temperature of the ion-implanted LED increases from 34.3 °C to 42.3 °C, while that of the conventional one rises from 30.3 °C to 63.6 °C. At 100 mA, the output power of the ion-implanted device is 6.09 % higher than that of the conventional device. The slight increase of optical power is due to the increase of current density outside the cold zone region of the implanted device and reduced junction temperature. The result indicates that our approach improves thermal dissipation and meanwhile maintains the linearity of L-I curves.

Rectifying and photovoltaic properties of the heterojunction composed of CaMnO3 and Nb-doped SrTiO3

NASA Astrophysics Data System (ADS)

Sun, J. R.; Zhang, S. Y.; Shen, B. G.; Wong, H. K.

2005-01-01

A heterojunction composed of CaMnO3 (CMO) and Nb-doped SrTiO3 (STON) was fabricated and its properties were studied and compared with La0.67Ca0.33MnO3/STON and LaMnO3+δ/STON p-n, junctions. This CMO/STON junction exhibits an asymmetric current-voltage relation similar to a p-n junction. The most remarkable discovery is that the magnetic state of the manganites has a strong impact on the rectifying behaviors. The diffusion voltage, which is the critical voltage for the current rush, shows a tendency to decrease/increase with the establishment of the antiferromagnetic/ferromagnetic order in the manganites of the junction. Similar to other manganite p-n junctions, CMO/STON also exhibits a significant photovoltaic effect, and the maximum photovoltage is ˜2.2mV under the illumination of ˜7mW light (λ=460nm). A qualitative explanation is given based on an analysis on the band diagram of the junctions.

Low-noise current amplifier based on mesoscopic Josephson junction.

PubMed

Delahaye, J; Hassel, J; Lindell, R; Sillanpää, M; Paalanen, M; Seppä, H; Hakonen, P

2003-02-14

We used the band structure of a mesoscopic Josephson junction to construct low-noise amplifiers. By taking advantage of the quantum dynamics of a Josephson junction, i.e., the interplay of interlevel transitions and the Coulomb blockade of Cooper pairs, we created transistor-like devices, Bloch oscillating transistors, with considerable current gain and high-input impedance. In these transistors, the correlated supercurrent of Cooper pairs is controlled by a small base current made up of single electrons. Our devices reached current and power gains on the order of 30 and 5, respectively. The noise temperature was estimated to be around 1 kelvin, but noise temperatures of less than 0.1 kelvin can be realistically achieved. These devices provide quantum-electronic building blocks that will be useful at low temperatures in low-noise circuit applications with an intermediate impedance level.

Schottky barrier parameters and structural properties of rapidly annealed Zr Schottky electrode on p-type GaN

NASA Astrophysics Data System (ADS)

Rajagopal Reddy, V.; Asha, B.; Choi, Chel-Jong

2017-06-01

The Schottky barrier junction parameters and structural properties of Zr/p-GaN Schottky diode are explored at various annealing temperatures. Experimental analysis showed that the barrier height (BH) of the Zr/p-GaN Schottky diode increases with annealing at 400 °C (0.92 eV (I-V)/1.09 eV (C-V)) compared to the as-deposited one (0.83 eV (I-V)/0.93 eV (C-V)). However, the BH decreases after annealing at 500 °C. Also, at different annealing temperatures, the series resistance and BH are assessed by Cheung's functions and their values compared. Further, the interface state density (N SS) of the diode decreases after annealing at 400 °C and then somewhat rises upon annealing at 500 °C. Analysis reveals that the maximum BH is obtained at 400 °C, and thus the optimum annealing temperature is 400 °C for the diode. The XPS and XRD analysis revealed that the increase in BH may be attributed to the creation of Zr-N phases with increasing annealing up to 400 °C. The BH reduces for the diode annealed at 500 °C, which may be due to the formation of Ga-Zr phases at the junction. The AFM measurements reveal that the overall surface roughness of the Zr film is quite smooth during rapid annealing process. Project supported by the R&D Program for Industrial Core Technology (No. 10045216) and the Transfer Machine Specialized Lighting Core Technology Development Professional Manpower Training Project (No. N0001363) Funded by the Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea.

GaAs/InAs Multi Quantum Well Solar Cell

DTIC Science & Technology

2012-12-01

excited states, which explains the temperature dependence of these materials and the thermoelectric or Seebeck effect. 5 Figure 4. Temperature...dependence of conductivity [from Ref. 1] The thermoelectric field E is given by the equation: dTE Q dx  (1) where Q= thermoelectric ...G. JUNCTIONS A photovoltaic cell is a basic a pn-junction diode where p-type and n-type semiconductors are combined, as shown in Figure 17

Heat currents in electronic junctions driven by telegraph noise

NASA Astrophysics Data System (ADS)

Entin-Wohlman, O.; Chowdhury, D.; Aharony, A.; Dattagupta, S.

2017-11-01

The energy and charge fluxes carried by electrons in a two-terminal junction subjected to a random telegraph noise, produced by a single electronic defect, are analyzed. The telegraph processes are imitated by the action of a stochastic electric field that acts on the electrons in the junction. Upon averaging over all random events of the telegraph process, it is found that this electric field supplies, on the average, energy to the electronic reservoirs, which is distributed unequally between them: the stronger is the coupling of the reservoir with the junction, the more energy it gains. Thus the noisy environment can lead to a temperature gradient across an unbiased junction.

Investigation of properties of nanobridge Josephson junctions and superconducting tracks fabricated by FIB

NASA Astrophysics Data System (ADS)

Li, B.; Godfrey, T.; Cox, D.; Li, T.; Gallop, J.; Galer, S.; Nisbet, A.; Romans, Ed; Hao, L.

2018-02-01

An important requirement across a range of sensitive detectors is to determine accurately the energy deposited by the impact of a particle in a small volume. The particle may be anything from a visible photon through to an X-ray or massive charged particle. We have been developing nanobridge Josephson junctions based SQUIDs and nanoSQUID devices covering the entire range of particle detection energies from 1eV to MeV. In this paper we discuss some developments in nanobridge Josephson junctions fabrication using focussed ion beam (FIB) and how these developments impact future applications. We focus on tuning of the transition temperature of a superconducting thin-film absorber, with the aim to match the absorber Tc to the working temperature range of the SQUID and also on using a new Xe FIB to improve Josephson junction and superconducting film quality.

Microwave heating of a high-Tc YBa2Cu3O6.9 superconductor through a Josephson-junction system

NASA Astrophysics Data System (ADS)

Stankowski, J.; Czyak, B.; Martinek, J.

1990-12-01

An overheating of a Josephson-junction system (JJS) in ceramic YBa2Cu3O6.9 samples was induced by microwave irradiation in a microwave cavity. The amplitude of the Josephson microwave absorption (JMA) was used as a monitor of the local JJS temperature. The difference between the JJS temperature and a sample temperature depends linearly on the power of the microwave field. A thermal hysteresis of Tc for heating and cooling is proportional to the microwave power applied in the JMA experiment.

Method and apparatus for measuring temperatures in fabrics and flexible thermal insulations

NASA Technical Reports Server (NTRS)

Kourtides, Demetrius A. (Inventor)

1995-01-01

A temperature sensor uses a type R thermocouple wire element in a ceramic sheath to sense temperatures up to 3,200 deg F., and is particularly suitable for flexible insulations. The sensor includes a thermocouple wire embedded in a sheath having two sections disposed at right angles to each other. The junction of the thermocouple is located at one end of one of the sections and the lead wires extend from the other section. The section which includes the junction is secured to a flexible surface with ceramic cement.

Thermal characterization of GaN-based laser diodes by forward-voltage method

NASA Astrophysics Data System (ADS)

Feng, M. X.; Zhang, S. M.; Jiang, D. S.; Liu, J. P.; Wang, H.; Zeng, C.; Li, Z. C.; Wang, H. B.; Wang, F.; Yang, H.

2012-05-01

An expression of the relation between junction temperature and forward voltage common for both GaN-based laser diodes (LDs) and light emitting diodes is derived. By the expression, the junction temperature of GaN-based LDs emitting at 405 nm was measured at different injection current and compared with the result of micro-Raman spectroscopy, showing that the expression is reasonable. In addition, the activation energy of Mg in AlGaN/GaN superlattice layers is obtained based on the temperature dependence of forward voltage.

Probing fast heating in magnetic tunnel junction structures with exchange bias

NASA Astrophysics Data System (ADS)

Papusoi, C.; Sousa, R.; Herault, J.; Prejbeanu, I. L.; Dieny, B.

2008-10-01

Heat diffusion in a magnetic tunnel junction (MTJ) having a ferromagnetic/antiferromagnetic free layer is investigated. The MTJ is heated by an electric current pulse of power PHP, flowing through the junction in current perpendicular to the plane (CPP) geometry, via Joule heat dissipation in the tunnel barrier. According to a proposed one-dimensional (1D) model of heat diffusion, when an electric voltage is applied to the MTJ, the free layer experiences a transient temperature regime, characterized by an exponential increase of its temperature TAF with a time constant τTR, followed by a steady temperature regime characterized by TAF=TRT+αPHP, where TRT is the room temperature and α is a constant. Magnetic transport measurements of exchange bias HEX acting on the free layer allow the determination of α and τTR. The experimental values of α and τTR are in agreement with those calculated using the 1D model and an estimation of the MTJ thermodynamic parameters based on the Dulong-Petit and Widemann-Franz laws.

Comparison of online and offline tests in LED accelerated reliability tests under temperature stress.

PubMed

Ke, Hong-Liang; Jing, Lei; Gao, Qun; Wang, Yao; Hao, Jian; Sun, Qiang; Xu, Zhi-Jun

2015-11-20

Accelerated aging tests are the main method used in the evaluation of LED reliability, and can be performed in either online or offline modes. The goal of this study is to provide the difference between the two test modes. In the experiments, the sample is attached to different heat sinks to acquire the optical parameters under different junction temperatures of LEDs. By measuring the junction temperature in the aging process (Tj1), and the junction temperature in the testing process (Tj2), we achieve consistency with an online test of Tj1 and Tj2 and a difference with an offline test of Tj1 and Tj2. Experimental results show that the degradation rate of the luminous flux rises as Tj2 increases, which yields a difference of projected life L(70%) of 8% to 13%. For color shifts over 5000 h of aging, the online test shows a larger variation of the distance from the Planckian locus, about 40% to 50% more than the normal test at an ambient temperature of 25°C.

Tunneling anisotropic magnetoresistance in complex oxide tunnel junctions

NASA Astrophysics Data System (ADS)

Martínez, Benjamín; López-Mir, Laura; Galceran, Regina; Balcells, Lluis; Pomar, Alberto; Konstantinovic, Zorica; Sandiumenge, Felip; Frontera, Carlos; Advanced Characterization of Nanostructured Materials Team

The magnetotransport properties of La2/3Sr1/3MnO3(LSMO)/LaAlO3(LAO)/ Pt tunneling junctions have been analyzed as a function of temperature and magnetic field. The junctions exhibit magnetoresistance (MR) values of about 37%, at H = 90 kOe at low temperature. However, the temperature dependence of MR indicates a clear distinct origin than that of conventional colossal MR. In addition, tunneling anisotropic MR (TAMR) values around 4% are found at low temperature and its angular dependence reflects the expected uniaxial anisotropy. The use of TAMR response could be an alternative of much easier technological implementation than conventional MTJs since only one magnetic electrode is required, thus opening the door to the implementation of more versatile devices. However, further studies are required in order to improve the strong temperature dependence at the present stage. Finantial support from Spanish Ministry of Economy and Competitiveness through the Severo Ochoa Programme for Centres of Excellence in R&D (SEV-2015-0496), and projects MAT2012-33207 and MAT2015-71664-R is acknowledged.

Fabrication and characterization of graphene/molecule/graphene vertical junctions with aryl alkane monolayers

NASA Astrophysics Data System (ADS)

Jeong, Inho; Song, Hyunwook

2017-11-01

In this study, we fabricated and characterized graphene/molecule/graphene (GMG) vertical junctions with aryl alkane monolayers. The constituent molecules were chemically self-assembled via electrophilic diazonium reactions into a monolayer on the graphene bottom electrode, while the other end physically contacted the graphene top electrode. A full understanding of the transport properties of molecular junctions is a key step in the realization of molecular-scale electronic devices and requires detailed microscopic characterization of the junction's active region. Using a multiprobe approach combining a variety of transport techniques, we elucidated the transport mechanisms and electronic structure of the GMG junctions, including temperature- and length-variable transport measurements, and transition voltage spectroscopy. These results provide criteria to establish a valid molecular junction and to determine the most probable transport characteristics of the GMG junctions.

Imaging the Solar Cell P-N Junction and Depletion Region Using Secondary Electron Contrast

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heath, J. T.; Jiang, C. S.; Al-Jassim, M. M.

2011-01-01

We report on secondary electron (SE) images of cross-sectioned multicrystalline Si and GaAs/GaInP solar cell devices, focusing on quantifying the relationship between the apparent n{sup +}-p contrast and characteristic electronic features of the device. These samples allow us to compare the SE signal from devices which have very different physical characteristics: differing materials, diffused junction versus abrupt junction, heterojunction versus homojunction. Despite these differences, we find that the SE image contrast for both types of sample, and as a function of reverse bias across the diode, closely agrees with PC1D simulations of the bulk electrostatic potential in the device, accuratelymore » yielding the depletion edge and width. A spatial derivative of the SE data shows a local maximum at the metallurgical junction. Such data are valuable, for example, in studying the conformity of a diffused junction to the textured surface topography. These data also extend our understanding of the origin of the SE contrast.« less

Epitaxial growth of mosaic diamond: Mapping of stress and defects in crystal junction with a confocal Raman spectroscopy

NASA Astrophysics Data System (ADS)

Shu, Guoyang; Dai, Bing; Ralchenko, V. G.; Khomich, A. A.; Ashkinazi, E. E.; Bolshakov, A. P.; Bokova-Sirosh, S. N.; Liu, Kang; Zhao, Jiwen; Han, Jiecai; Zhu, Jiaqi

2017-04-01

We studied defects and stress distributions in mosaic epitaxial diamond film using a confocal Raman spectroscopy, with a special attention to the junction area between the crystals. The mosaics was grown by microwave plasma CVD on closely arranged (1 0 0)-oriented HPHT type Ib substrates. The width of stress affected and defect enriched region around the junction show a tendency of extending with the film thickness, from ≈40 μm on the film-substrate interface to ≈250 μm in the layer 500 μm above the substrate, as found from the mosaics analysis in cross-section. The stress field around the junction demonstrates a complex pattern, with mixed domains of tensile and compressive stress, with maximum value of σ ≈ 0.6 GPa. A similar non-uniform pattern was observed for defect distribution as well. No sign of amorphous sp2 carbon in the junction zone was revealed.

Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

DOEpatents

Toet, Daniel; Sigmon, Thomas W.

2004-12-07

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Process For Direct Integration Of A Thin-Film Silicon P-N Junction Diode With A Magnetic Tunnel Junction

DOEpatents

Toet, Daniel; Sigmon, Thomas W.

2005-08-23

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

DOEpatents

Toet, Daniel; Sigmon, Thomas W.

2003-01-01

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Rectifying Characteristics and Transport Behavior in a Schottky Junction of CaCu3Ti4O12 and Pt

NASA Astrophysics Data System (ADS)

Chen, Cong; Ning, Ting-Yin; Wang, Can; Zhou, Yue-Liang; Zhang, Dong-Xiang; Wang, Pei; Ming, Hai; Yang, Guo-Zhen

2011-08-01

CaCu3Ti4O12 (CCTO) thin films were fabricated on ITO-covered MgO (100) substrates. The rectification characteristics were observed in the CCTO capacitance structure with Pt top electrodes at temperatures ranging from 150 K to 330 K, which are attributed to the formation of a Schottky junction between n-type semiconducting CCTO and Pt due to the difference of their work functions. At low forward-bias voltage, the current-voltage characteristics of the Schottky junction follow . A strong decrease in ideality factor with the increasing temperature is obtained by linear fitting at the low bias voltage.

Penetration depth of MgB2 measured using Josephson junctions and SQUIDs

NASA Astrophysics Data System (ADS)

Cunnane, Daniel; Zhuang, Chenggang; Chen, Ke; Xi, X. X.; Yong, Jie; Lemberger, T. R.

2013-02-01

The penetration depth of MgB2 was measured using two methods of different mechanisms. The first method used MgB2 Josephson junctions and the magnetic field dependence of the junction critical current. The second method deduced the penetration depth from the inductance of a MgB2 microstrip used to modulate the voltage of a MgB2 DC SQUID. The two methods showed a consistent value of the low-temperature penetration depth for MgB2 to be about 40 nm. Both the small penetration depth value and its temperature dependence are in agreement with a microscopic theory for MgB2 in the clean limit.

Phase-tunable temperature amplifier

NASA Astrophysics Data System (ADS)

Paolucci, F.; Marchegiani, G.; Strambini, E.; Giazotto, F.

2017-06-01

Coherent caloritronics, the thermal counterpart of coherent electronics, has drawn growing attention since the discovery of heat interference in 2012. Thermal interferometers, diodes, transistors and nano-valves have been theoretically proposed and experimentally demonstrated by exploiting the quantum phase difference between two superconductors coupled through a Josephson junction. So far, the quantum-phase modulator has been realized in the form of a superconducting quantum interference device (SQUID) or a superconducting quantum interference proximity transistor (SQUIPT). Thence, an external magnetic field is necessary in order to manipulate the heat transport. Here, we theoretically propose the first on-chip fully thermal caloritronic device: the phase-tunable temperature amplifier (PTA). Taking advantage of a recently discovered thermoelectric effect in spin-split superconductors coupled to a spin-polarized system, we generate the magnetic flux controlling the transport through a temperature-biased SQUIPT by applying a temperature gradient. We simulate the behavior of the device and define a number of figures of merit in full analogy with voltage amplifiers. Notably, our architecture ensures almost infinite input thermal impedance, maximum gain of about 11 and efficiency reaching the 95%. This concept paves the way for applications in radiation sensing, thermal logics and quantum information.

Photoemf in cadmium sulfide

NASA Technical Reports Server (NTRS)

Boeer, K. W.

1971-01-01

Theoretical and experimental investigations on CdS single crystals and CuxS:CdS photovoltaic cells prepared from CdS single crystals by a chemical-dip procedure are described. The studies are aimed at clarifying cell mechanisms which affect key cell properties (efficiency, reliability, and lifetime) by examining the properties of intrinsic and extrinsic defects in the junction and surface regions and their effects on carrier transport through these regions. The experimental research described includes studies of thermal, infrared, and field quenching of acceptor-doped CdS crystals; investigation of optical and electrical properties of CuxS:CdS photovoltaic cells (current-voltage characteristics, spectral distribution of photocurrent and photovoltage) and the dependence of these properties on temperature and light intensity; measurement of changes, as a result of heat treatment in ultrahigh vacuum, in the spectral distribution of photoconductivity at room temperature and liquid nitrogen temperature, the luminescence spectrum at liquid nitrogen temperature, and the thermally stimulated current curves of CdS crystals; determination of the effect of irradiation with 150 keV (maximum) X-rays on the spectral distribution of photoconductivity and thermally-stimulated current of CdS crystals; and studies of the effect of growth conditions on the photoconductive properties of CdS crystals.

Analysis of Schottky Barrier Parameters and Current Transport Properties of V/p-Type GaN Schottky Junction at Low Temperatures

NASA Astrophysics Data System (ADS)

Asha, B.; Harsha, Cirandur Sri; Padma, R.; Rajagopal Reddy, V.

2018-05-01

The electrical characteristics of a V/p-GaN Schottky junction have been investigated by current-voltage (I-V) and capacitance-voltage (C-V) characteristics under the assumption of the thermionic emission (TE) theory in the temperature range of 120-280 K with steps of 40 K. The zero-bias barrier height (ΦB0), ideality factor (n), flat-band barrier height (ΦBF) and series resistance (R S) values were evaluated and were found to be strongly temperature dependent. The results revealed that the ΦB0 values increase, whereas n, ΦFB and R S values decrease, with increasing temperature. Using the conventional Richardson plot, the mean barrier height (0.39 eV) and Richardson constant (8.10 × 10-10 Acm-2 K-2) were attained. The barrier height inhomogeneities were demonstrated by assuming a Gaussian distribution function. The interface state density (N SS) values were found to decrease with increasing temperature. The reverse leakage current mechanism of the V/p-GaN Schottky junction was found to be governed by Poole-Frenkel emission at all temperatures.

Novel signal inversion of laser beam induced current for femtosecond-laser-drilling-induced junction on vacancy-doped p-type HgCdTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiu, W. C.; Wang, R.; Xu, Z. J.

2014-05-28

In this paper, experimental results of temperature-dependent signal inversion of laser beam induced current (LBIC) for femtosecond-laser-drilling-induced junction on vacancy-doped p-type HgCdTe are reported. LBIC characterization shows that the traps induced by femtosecond laser drilling are sensitive to temperature. Theoretical models for trap-related p-n junction transformation are proposed and demonstrated using numerical simulations. The simulations are in good agreement with the experimental results. The effects of traps and mixed conduction are possibly the main reasons that result in the novel signal inversion of LBIC microscope at room temperature. The research results provide a theoretical guide for practical applications of large-scalemore » array HgCdTe infrared photovoltaic detectors formed by femtosecond laser drilling, which may act as a potential new method for fabricating HgCdTe photodiodes.« less

Differential Conductance Measurements of MgB2/I/Pb Heterojunctions and all-MgB2 Junctions

NASA Astrophysics Data System (ADS)

Cusick, David; Eckhardt, Matthew; Dai, Wenqing; Li, Qi; Chen, Ke; Cunnane, Daniel; Zhuang, C. G.; Xi, X. X.; Naito, Michio; Ramos, Roberto

2015-03-01

We present our work characterizing several types of Magnesium Diboride Josephson junctions, including MgB2/I/Pb heterojunctions and all-MgB2 junctions. We will report on the I-V and dI/dV-V data collected at various temperatures using both a cryocooler-based experimental platform between 2 and 20 Kelvin and using a 3He probe platform between 0.3 and 1.0 Kelvin. These were both developed by undergraduates in a liberal arts university. Using high-sampling rates with a 24-bit data acquisition card and access to a broad of range of temperatures, we track and report energy gap distributions and temperature-dependent features of dI/dV peaks of MgB2, comparing these with theoretical predictions. R.C.R. acknowledges support from National Science Foundation Grant # DMR-1206561.

Discovery of a photoresponse amplification mechanism in compensated PN junctions

NASA Astrophysics Data System (ADS)

Zhou, Yuchun; Liu, Yu-Hsin; Rahman, Samia N.; Hall, David; Sham, L. J.; Lo, Yu-Hwa

2015-01-01

We report the experimental evidence of uncovering a photoresponse amplification mechanism in heavily doped, partially compensated silicon p-n junctions under very low bias voltage. We show that the observed photocurrent gain occurs at a bias that is more than an order of magnitude below the threshold voltage for conventional impact ionization. Moreover, contrary to the case of avalanche detectors and p-i-n diodes, the amplified photoresponse is enhanced rather than suppressed with increasing temperature. These distinctive characteristics lead us to hypothesize that the inelastic scattering between energetic electrons (holes) and the ionized impurities in the depletion and charge neutral regions of the p-n junction in a cyclic manner plays a significant role in the amplification process. Such an internal signal amplification mechanism, which occurs at much lower bias than impact ionization and favors room temperature over cryogenic temperature, makes it promising for practical device applications.

Conductance enhancement due to interface magnons in electron-beam evaporated MgO magnetic tunnel junctions with CoFeB free layer deposited at different pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, P.; Yu, G. Q.; Wei, H. X.

Electron-beam evaporated MgO-based magnetic tunnel junctions have been fabricated with the CoFeB free layer deposited at Ar pressure from 1 to 4 mTorr, and their tunneling process has been studied as a function of temperature and bias voltage. By changing the growth pressure, the junction dynamic conductance dI/dV, inelastic electron tunneling spectrum d²I/dV², and tunneling magnetoresistance vary with temperature. Moreover, the low-energy magnon cutoff energy E {sub C} derived from the conductance versus temperature curve agrees with interface magnon energy obtained directly from the inelastic electron tunneling spectrum, which demonstrates that interface magnons are involved in the electron tunneling process,more » opening an additional conductance channel and thus enhancing the total conductance.« less

Discovery of a photoresponse amplification mechanism in compensated PN junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Yuchun; Rahman, Samia N.; Hall, David

2015-01-19

We report the experimental evidence of uncovering a photoresponse amplification mechanism in heavily doped, partially compensated silicon p-n junctions under very low bias voltage. We show that the observed photocurrent gain occurs at a bias that is more than an order of magnitude below the threshold voltage for conventional impact ionization. Moreover, contrary to the case of avalanche detectors and p-i-n diodes, the amplified photoresponse is enhanced rather than suppressed with increasing temperature. These distinctive characteristics lead us to hypothesize that the inelastic scattering between energetic electrons (holes) and the ionized impurities in the depletion and charge neutral regions ofmore » the p-n junction in a cyclic manner plays a significant role in the amplification process. Such an internal signal amplification mechanism, which occurs at much lower bias than impact ionization and favors room temperature over cryogenic temperature, makes it promising for practical device applications.« less

Accurate chromatic control and color rendering optimization in LED lighting systems using junction temperature feedback

NASA Astrophysics Data System (ADS)

Sisto, Marco Michele; Gauvin, Jonny

2014-09-01

Accurate color control of LED lighting systems is a challenging task: noticeable chromaticity shifts are commonly observed in mixed-color and phosphor converted LEDs due to intensity dimming. Furthermore, the emitted color varies with the LED temperature. We present a novel color control method for tri-chromatic and tetra-chromatic LEDs, which enable to set and maintain the LED emission at a target color, or combination of correlated color temperature (CCT) and intensity. The LED color point is maintained over variations in the LED junctions' temperatures and intensity dimming levels. The method does not require color feedback sensors, so to minimize system complexity and cost, but relies on estimation of the LED junctions' temperatures from the junction voltages. If operated with tetra-chromatic LEDs, the method allows meeting an additional optimization criterion: for example, the maximization of a color rendering metric like the Color Rendering Index (CRI) or the Color Quality Scale (CQS), thus providing a high quality and clarity of colors on the surface illuminated by the LED. We demonstrate the control of a RGBW LED at target D65 white point with CIELAB color difference metric triangle;a,bE < 1 for simultaneous variations of flux from approximately 30 lm to 100 lm and LED heat sink temperature from 25°C to 58°C. In the same conditions, we demonstrate a CCT error <1%. Furthermore, the method allows varying the LED CCT from 5500K to 8000K while maintaining luminance within 1% of target. Further work is ongoing to evaluate the stability of the method over LED aging.

Temperature dependence of carrier transport and resistance switching in Pt/SrTi1-xNbxO3 Schottky junctions

NASA Astrophysics Data System (ADS)

Li, Jianyong; Ohashi, Naoki; Okushi, Hideyo; Haneda, Hajime

2011-03-01

We investigated the temperature dependence of carrier transport and resistance switching of Pt/SrTi1-xNbxO3 Schottky junctions in the temperature range 80-400 K by measuring the current-voltage (I-V) characteristics and the frequency dependence of the capacitance-voltage (C-V) characteristics. The I-V curves displayed a high degree of hysteresis, known as the colossal electroresistance (CER) effect, and their temperature dependence showed an anomalous behavior, i.e., the magnitude of the hysteresis increased with decreasing T. The experimental results were analyzed by taking into account the temperature and electric-field dependence of the relative permittivity of SrTi1-xNbxO3 as well as the inhomogeneity of the Schottky barrier height (SBH) (a model in which two parallel current paths coexist in the Schottky barrier). It was confirmed that the observed I-V and C-V curves were well simulated by this model, thus indicating that the CER effects originated in the field emission current through different SBHs and at different locations of the Schottky junctions. Based on these results, we explain the mechanism of the CER effect qualitatively in terms of this model. For this purpose, we take into account the pinched-off effect caused by the small-scale inhomogeneity of SBH and the existence of deep levels as a result of defects and unintentional impurities in the depletion layer of the Pt/SrTi1-xNbxO3 Schottky junctions.

Creation of stable molecular junctions with a custom-designed scanning tunneling microscope.

PubMed

Lee, Woochul; Reddy, Pramod

2011-12-02

The scanning tunneling microscope break junction (STMBJ) technique is a powerful approach for creating single-molecule junctions and studying electrical transport in them. However, junctions created using the STMBJ technique are usually mechanically stable for relatively short times (<1 s), impeding detailed studies of their charge transport characteristics. Here, we report a custom-designed scanning tunneling microscope that enables the creation of metal-single molecule-metal junctions that are mechanically stable for more than 1 minute at room temperature. This stability is achieved by a design that minimizes thermal drift as well as the effect of environmental perturbations. The utility of this instrument is demonstrated by performing transition voltage spectroscopy-at the single-molecule level-on Au-hexanedithiol-Au, Au-octanedithiol-Au and Au-decanedithiol-Au junctions.

Variability metrics in Josephson Junction fabrication for Quantum Computing circuits

NASA Astrophysics Data System (ADS)

Rosenblatt, Sami; Hertzberg, Jared; Brink, Markus; Chow, Jerry; Gambetta, Jay; Leng, Zhaoqi; Houck, Andrew; Nelson, J. J.; Plourde, Britton; Wu, Xian; Lake, Russell; Shainline, Jeff; Pappas, David; Patel, Umeshkumar; McDermott, Robert

Multi-qubit gates depend on the relative frequencies of the qubits. To reliably build multi-qubit devices therefore requires careful fabrication of Josephson junctions in order to precisely set their critical currents. The Ambegaokar-Baratoff relation between tunnel conductance and critical current implies a correlation between qubit frequency spread and tunnel junction resistance spread. Here we discuss measurement of large numbers of tunnel junctions to assess these resistance spreads, which can exceed 5% of mean resistance. With the goal of minimizing these spreads, we investigate process parameters such as lithographic junction area, evaporation and masking scheme, oxidation conditions, and substrate choice, as well as test environment, design and setup. In addition, trends of junction resistance with temperature are compared with theoretical models for further insights into process and test variability.

Progress toward the development of dual junction GaAs/Ge solar cells

NASA Technical Reports Server (NTRS)

Lillington, D. R.; Krut, D. D.; Cavicchi, B. T.; Ralph, E.; Chung, M.

1991-01-01

Large area GaAs/Ge cells offer substantial promise for increasing the power output from existing silicon solar array designs and for providing an enabled technology for missions hitherto impossible using silicon. Single junction GaAs/Ge cells offer substantial advantages in both size, weight, and cost compared to GaAs cells but the efficiency is limited to approximately 19.2 to 20 percent AMO. The thermal absorptance of GaAs/Ge cells is also worse than GaAs/GaAs cells (0.88 vs 0.81 typ.) due to the absorption in the Ge substrate. On the other hand dual junction GaAs/Ge cells offer efficiencies up to ultimately 24 percent AMO in sizes up to 8 x 8 cm but there are still technological issues remaining to achieve current matching in the GaAs and Ge cells. This can be achieved through tuned antireflection (AR) coatings, improved quality of the GaAs growth, improved quality Ge wafers and the use of a Back Surface Field (BSF)/Back Surface Reflector (BSR) in the Ge cell. Although the temperature coefficients of efficiency and voltage are higher for dual junction GaAs/Ge cells, it has been shown elsewhere that for typical 28 C cell efficiencies of 22 percent (dual junction) vs 18.5 percent (single junction) there is a positive power tradeoff up to temperatures as high as 120 C. Due to the potential ease of fabrication of GaAs/Ge dual junction cells there is likely to be only a small cost differential compared to single junction cells.

High-efficiency thermal switch based on topological Josephson junctions

NASA Astrophysics Data System (ADS)

Sothmann, Björn; Giazotto, Francesco; Hankiewicz, Ewelina M.

2017-02-01

We propose theoretically a thermal switch operating by the magnetic-flux controlled diffraction of phase-coherent heat currents in a thermally biased Josephson junction based on a two-dimensional topological insulator. For short junctions, the system shows a sharp switching behavior while for long junctions the switching is smooth. Physically, the switching arises from the Doppler shift of the superconducting condensate due to screening currents induced by a magnetic flux. We suggest a possible experimental realization that exhibits a relative temperature change of 40% between the on and off state for realistic parameters. This is a factor of two larger than in recently realized thermal modulators based on conventional superconducting tunnel junctions.

Engineering and characterizing inverse tunneling magnetoresistance magnetic tunnel junctions with novel ferromagnetic electrodes

NASA Astrophysics Data System (ADS)

Xiang, Hua

Magnetic tunnel junctions (MTJs) have attracted great interest for applications in read heads and nonvolatile magnetic random access memories. MTJs exhibit tunneling magnetoresistance (TMR), which is proportional to the spin polarization (SP) of ferromagnetic (FM) electrodes. This thesis describes the fabrication and characterization of inverse TMR MTJs with novel FM electrodes and tunnel barriers, including Fe3O4 and Fe4N electrodes and Ta2O5 tunnel barriers. Fe3O4 has been predicted to have perfect negative SP at the Fermi level, making it a promising FM electrode for inverse TMR MTJs. Two approaches were developed to grow epitaxial Fe3O 4 films on Si substrates, reactive sputtering and selective oxidation, and the physical properties were characterized. Epitaxial Fe3O 4 films with smooth surfaces were achieved using a TiN buffer and low temperature selective oxidation. Fe4N has also been predicted to have nearly perfect negative SP. Epitaxial Fe4N films were fabricated on Si substrates by reactive sputtering, and the magnetic properties and thermal stability were characterized. Fe4N is metastable with respect to decomposition into Fe and N 2. During room temperature air oxidation, an epitaxial Fe3O 4 layer formed on Fe4N surface, by incorporation of oxygen, decomposition of Fe4N, and release of N. We fabricated Fe4N/AlOx/Fe MTJs and found normal TMR for the as-prepared junction but inverse TMR with abnormal bias dependence after annealing. The TMR inversion is caused by an Fe3O4 layer at the Fe4N/AlO, interface. The abnormal bias dependence is caused by an imperfect Fe3O4/AlOx interface. Fe3O4 (or Fe4N)/Ta2O5/Fe MTJs show relatively low junction resistance and noisy TMR signals, due to the difficulty of preparing high quality Ta2O5 barriers. The effect of composition of bcc Co100-xFex electrodes on the TMR for AlOx-based MTJs has been studied. The TMR increases with x until it reaches a maximum of 66.7% at 28 at.% Fe, and then decreases. The reason for this TMR variation is the s-like electron dominant tunneling and the variation of the s-like electron density of state with different compositions.

Beam localization in HIFU temperature measurements using thermocouples, with application to cooling by large blood vessels.

PubMed

Dasgupta, Subhashish; Banerjee, Rupak K; Hariharan, Prasanna; Myers, Matthew R

2011-02-01

Experimental studies of thermal effects in high-intensity focused ultrasound (HIFU) procedures are often performed with the aid of fine wire thermocouples positioned within tissue phantoms. Thermocouple measurements are subject to several types of error which must be accounted for before reliable inferences can be made on the basis of the measurements. Thermocouple artifact due to viscous heating is one source of error. A second is the uncertainty regarding the position of the beam relative to the target location or the thermocouple junction, due to the error in positioning the beam at the junction. This paper presents a method for determining the location of the beam relative to a fixed pair of thermocouples. The localization technique reduces the uncertainty introduced by positioning errors associated with very narrow HIFU beams. The technique is presented in the context of an investigation into the effect of blood flow through large vessels on the efficacy of HIFU procedures targeted near the vessel. Application of the beam localization method allowed conclusions regarding the effects of blood flow to be drawn from previously inconclusive (because of localization uncertainties) data. Comparison of the position-adjusted transient temperature profiles for flow rates of 0 and 400ml/min showed that blood flow can reduce temperature elevations by more than 10%, when the HIFU focus is within a 2mm distance from the vessel wall. At acoustic power levels of 17.3 and 24.8W there is a 20- to 70-fold decrease in thermal dose due to the convective cooling effect of blood flow, implying a shrinkage in lesion size. The beam-localization technique also revealed the level of thermocouple artifact as a function of sonication time, providing investigators with an indication of the quality of thermocouple data for a given exposure time. The maximum artifact was found to be double the measured temperature rise, during initial few seconds of sonication. Copyright © 2010 Elsevier B.V. All rights reserved.

Electron transport and noise spectroscopy in organic magnetic tunnel junctions with PTCDA and Alq3 barriers

NASA Astrophysics Data System (ADS)

Martinez, Isidoro; Cascales, Juan Pedro; Hong, Jhen-Yong; Lin, Minn-Tsong; Prezioso, Mirko; Riminucci, Alberto; Dediu, Valentin A.; Aliev, Farkhad G.

2016-10-01

The possible influence of internal barrier dynamics on spin, charge transport and their fluctuations in organic spintronics remains poorly understood. Here we present investigation of the electron transport and low frequency noise at temperatures down to 0.3K in magnetic tunnel junctions with an organic PTCDA barriers with thickness up to 5 nm in the tunneling regime and with 200 nm thick Alq3 barrier in the hopping regime. We observed high tunneling magneto-resistance at low temperatures (15-40%) and spin dependent super-poissonian shot noise in organic magnetic tunnel junctions (OMTJs) with PTCDA. The Fano factor exceeds 1.5-2 values which could be caused by interfacial states controlled by spin dependent bunching in the tunneling events through the molecules.1 The bias dependence of the low frequency noise in OMTJs with PTCDA barriers which includes both 1/f and random telegraph noise activated at specific biases will also be discussed. On the other hand, the organic junctions with ferromagnetic electrodes and thick Alq3 barriers present sub-poissonian shot noise which depends on the temperature, indicative of variable range hopping.

Thermal management of high heat flux electronic components in space and aircraft systems, phase 1

NASA Astrophysics Data System (ADS)

Iversen, Arthur H.

1991-03-01

The objectives of this Phase 1 program were to analyze, design, construct and demonstrate the application of curved surface cooling to power devices with the goal of demonstrating greater than 200 W/sq cm chip dissipation while maintaining junction temperatures within specification. Major components of the experiment comprised the test fixture for mounting the device under test and the cooling loop equipment and instrumentation. The work conducted in this Phase 1 study was to establish the basic parameters for the design of an entire class of efficient, compact, lightweight and cost competitive power conversion/conditioning systems for space, aircraft and general DOD requirements. This has been accomplished. Chip power dissipation of greater than 400 W/sq cm was demonstrated, and a general packaging and the thermal management design has been devised to meet the above requirements. The power limit reached was dictated by the junction temperature and not power dissipation, i.e., critical heat flux. The key to the packaging design is a basic construction concept that provides low junction to fluid thermal resistance. High heat flux dissipation without low thermal resistance is useless because excessive junction temperatures will results.

Role of inter-tube coupling and quantum interference on electrical transport in carbon nanotube junctions

NASA Astrophysics Data System (ADS)

Tripathy, Srijeet; Bhattacharyya, Tarun Kanti

2016-09-01

Due to excellent transport properties, Carbon nanotubes (CNTs) show a lot of promise in sensor and interconnect technology. However, recent studies indicate that the conductance in CNT/CNT junctions are strongly affected by the morphology and orientation between the tubes. For proper utilization of such junctions in the development of CNT based technology, it is essential to study the electronic properties of such junctions. This work presents a theoretical study of the electrical transport properties of metallic Carbon nanotube homo-junctions. The study focuses on discerning the role of inter-tube interactions, quantum interference and scattering on the transport properties on junctions between identical tubes. The electronic structure and transport calculations are conducted with an Extended Hückel Theory-Non Equilibrium Green's Function based model. The calculations indicate conductance to be varying with a changing crossing angle, with maximum conductance corresponding to lattice registry, i.e. parallel configuration between the two tubes. Further calculations for such parallel configurations indicate onset of short and long range oscillations in conductance with respect to changing overlap length. These oscillations are attributed to inter-tube coupling effects owing to changing π orbital overlap, carrier scattering and quantum interference of the incident, transmitted and reflected waves at the inter-tube junction.

Time dependent and temperature dependent properties of the forward voltage characteristic of InGaN high power LEDs

NASA Astrophysics Data System (ADS)

Fulmek, P. L.; Haumer, P.; Wenzl, F. P.; Nemitz, W.; Nicolics, J.

2017-03-01

Estimating the junction temperature and its dynamic behavior in dependence of various operating conditions is an important issue, since these properties influence the optical characteristics as well as the aging processes of a light-emitting diode (LED). Particularly for high-power LEDs and pulsed operation, the dynamic behavior and the resulting thermal cycles are of interest. The forward voltage method relies on the existence of a time-independent unique triple of forward-voltage, forward-current, and junction temperature. These three figures should as well uniquely define the optical output power and spectrum, as well as the loss power of the LED, which is responsible for an increase of the junction temperature. From transient FEM-simulations one may expect an increase of the temperature of the active semiconductor layer of some 1/10 K within the first 10 μs. Most of the well-established techniques for junction temperature measurement via forward voltage method evaluate the measurement data several dozens of microseconds after switching on or switching off and estimate the junction temperature by extrapolation towards the time of switching. In contrast, the authors developed a measurement procedure with the focus on the first microseconds after switching. Besides a fast data acquisition system, a precise control of the switching process is required, i.e. a precisely defined current pulse amplitude with fast rise-time and negligible transient by-effects. We start with a short description of the measurement setup and the newly developed control algorithm for the generation of short current pulses. The thermal characterization of the LED chip during the measurement procedures is accomplished by an IR thermography system and transient finite element simulations. The same experimental setup is used to investigate the optical properties of the LED in an Ulbricht-sphere. Our experiments are performed on InGaN LED chips mounted on an Al based insulated metal substrate (IMS), giving a comprehensive picture of the transient behavior of the forward voltage of this type of high power LED.

A High-Precision Micropipette Sensor for Cellular-Level Real-Time Thermal Characterization

PubMed Central

Shrestha, Ramesh; Choi, Tae-Youl; Chang, Wonseok; Kim, Donsik

2011-01-01

We report herein development of a novel glass micropipette thermal sensor fabricated in a cost-effective manner, which is capable of measuring steady thermal fluctuation at spatial resolution of ∼2 μm with an accuracy of ±0.01 °C. We produced and tested various micrometer-sized sensors, ranging from 2 μm to 30 μm. The sensor comprises unleaded low-melting-point solder alloy (Sn-based) as a core metal inside a pulled borosilicate glass pipette and a thin film of nickel coating outside, creating a thermocouple junction at the tip. The sensor was calibrated using a thermally insulated calibration chamber, the temperature of which can be controlled with an accuracy of ±0.01 °C, and the thermoelectric power (Seebeck coefficient) of the sensor was recorded from 8.46 to 8.86 μV/°C. We have demonstrated the capability of measuring temperatures at a cellular level by inserting our temperature sensor into the membrane of a live retinal pigment epithelium cell subjected to a laser beam with a focal spot of 6 μm. We measured transient temperature profiles and the maximum temperatures were in the range of 38–55 ± 0.5 °C. PMID:22164108

Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistor and Its RF Power Efficiency Optimization with Source-Bridged Field-Plate Structure.

PubMed

Kwak, Hyeon-Tak; Chang, Seung-Bo; Jung, Hyun-Gu; Kim, Hyun-Seok

2018-09-01

In this study, we consider the relationship between the temperature in a two-dimensional electron gas (2-DEG) channel layer and the RF characteristics of an AlGaN/GaN high-electron-mobility transistor by changing the geometrical structure of the field-plate. The final goal is to achieve a high power efficiency by decreasing the channel layer temperature. First, simulations were performed to compare and contrast the experimental data of a conventional T-gate head structure. Then, a source-bridged field-plate (SBFP) structure was used to obtain the lower junction temperature in the 2-DEG channel layer. The peak electric field intensity was reduced, and a decrease in channel temperature resulted in an increase in electron mobility. Furthermore, the gate-to-source capacitance was increased by the SBFP structure. However, under the large current flow condition, the SBFP structure had a lower maximum temperature than the basic T-gate head structure, which improved the device electron mobility. Eventually, an optimum position of the SBFP was used, which led to higher frequency responses and improved the breakdown voltages. Hence, the optimized SBFP structure can be a promising candidate for high-power RF devices.

Rear surface effects in high efficiency silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wenham, S.R.; Robinson, S.J.; Dai, X.

1994-12-31

Rear surface effects in PERL solar cells can lead not only to degradation in the short circuit current and open circuit voltage, but also fill factor. Three mechanisms capable of changing the effective rear surface recombination velocity with injection level are identified, two associated with oxidized p-type surfaces, and the third with two dimensional effects associated with a rear floating junction. Each of these will degrade the fill factor if the range of junction biases corresponding to the rear surface transition, coincides with the maximum power point. Despite the identified non idealities, PERL cells with rear floating junctions (PERF cells)more » have achieved record open circuit voltages for silicon solar cells, while simultaneously achieving fill factor improvements relative to standard PERL solar cells. Without optimization, a record efficiency of 22% has been demonstrated for a cell with a rear floating junction. The results of both theoretical and experimental studies are provided.« less

Superpoissonian shot noise in organic magnetic tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cascales, Juan Pedro; Martinez, Isidoro; Aliev, Farkhad G., E-mail: farkhad.aliev@uam.es

Organic molecules have recently revolutionized ways to create new spintronic devices. Despite intense studies, the statistics of tunneling electrons through organic barriers remains unclear. Here, we investigate conductance and shot noise in magnetic tunnel junctions with 3,4,9,10-perylene-teracarboxylic dianhydride (PTCDA) barriers a few nm thick. For junctions in the electron tunneling regime, with magnetoresistance ratios between 10% and 40%, we observe superpoissonian shot noise. The Fano factor exceeds in 1.5–2 times the maximum values reported for magnetic tunnel junctions with inorganic barriers, indicating spin dependent bunching in tunneling. We explain our main findings in terms of a model which includes tunnelingmore » through a two level (or multilevel) system, originated from interfacial bonds of the PTCDA molecules. Our results suggest that interfaces play an important role in the control of shot noise when electrons tunnel through organic barriers.« less

Modern Thermocouple Experiment.

ERIC Educational Resources Information Center

Chang, K. N.; And Others

1978-01-01

Describes a thermocouple circuit used to measure Joule heating as well as Peltier heating and cooling for a copper-Constantan metallic junction. Shows how the Seebeck effect from a thermocouple can monitor the temperature condition of a junction with regard to input power and Peltier effect. (Author/GA)

Spin-wave thermal population as temperature probe in magnetic tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Le Goff, A., E-mail: adrien.le-goff@u-psud.fr; Devolder, T.; Nikitin, V.

We study whether a direct measurement of the absolute temperature of a Magnetic Tunnel Junction (MTJ) can be performed using the high frequency electrical noise that it delivers under a finite voltage bias. Our method includes quasi-static hysteresis loop measurements of the MTJ, together with the field-dependence of its spin wave noise spectra. We rely on an analytical modeling of the spectra by assuming independent fluctuations of the different sub-systems of the tunnel junction that are described as macrospin fluctuators. We illustrate our method on perpendicularly magnetized MgO-based MTJs patterned in 50 × 100 nm{sup 2} nanopillars. We apply hard axismore » (in-plane) fields to let the magnetic thermal fluctuations yield finite conductance fluctuations of the MTJ. Instead of the free layer fluctuations that are observed to be affected by both spin-torque and temperature, we use the magnetization fluctuations of the sole reference layers. Their much stronger anisotropy and their much heavier damping render them essentially immune to spin-torque. We illustrate our method by determining current-induced heating of the perpendicularly magnetized tunnel junction at voltages similar to those used in spin-torque memory applications. The absolute temperature can be deduced with a precision of ±60 K, and we can exclude any substantial heating at the spin-torque switching voltage.« less

Controlling charge transport mechanisms in molecular junctions: Distilling thermally induced hopping from coherent-resonant conduction.

PubMed

Kim, Hyehwang; Segal, Dvira

2017-04-28

The electrical conductance of molecular junctions may depend strongly on the temperature and weakly on molecular length, under two distinct mechanisms: phase-coherent resonant conduction, with charges proceeding via delocalized molecular orbitals, and incoherent thermally assisted multi-step hopping. While in the case of coherent conduction, the temperature dependence arises from the broadening of the Fermi distribution in the metal electrodes, in the latter case it corresponds to electron-vibration interaction effects on the junction. With the objective to distill the thermally activated hopping component, thus exposing intrinsic electron-vibration interaction phenomena on the junction, we suggest the design of molecular junctions with "spacers," extended anchoring groups that act to filter out phase-coherent resonant electrons. Specifically, we study the electrical conductance of fixed-gap and variable-gap junctions that include a tunneling block, with spacers at the boundaries. Using numerical simulations and analytical considerations, we demonstrate that in our design, resonant conduction is suppressed. As a result, the electrical conductance is dominated by two (rather than three) mechanisms: superexchange (deep tunneling) and multi-step thermally induced hopping. We further exemplify our analysis on DNA junctions with an A:T block serving as a tunneling barrier. Here, we show that the electrical conductance is insensitive to the number of G:C base-pairs at the boundaries. This indicates that the tunneling-to-hopping crossover revealed in such sequences truly corresponds to the properties of the A:T barrier.

Conductivity and structure of ErAs nanoparticles embedded in GaAs pn junctions analyzed via conductive atomic force microscopy

NASA Astrophysics Data System (ADS)

Park, K. W.; Dasika, V. D.; Nair, H. P.; Crook, A. M.; Bank, S. R.; Yu, E. T.

2012-06-01

We have used conductive atomic force microscopy to investigate the influence of growth temperature on local current flow in GaAs pn junctions with embedded ErAs nanoparticles grown by molecular beam epitaxy. Three sets of samples, one with 1 ML ErAs deposited at different growth temperatures and two grown at 530 °C and 575 °C with varying ErAs depositions, were characterized. Statistical analysis of local current images suggests that the structures grown at 575 °C have about 3 times thicker ErAs nanoparticles than structures grown at 530 °C, resulting in degradation of conductivity due to reduced ErAs coverage. These findings explain previous studies of macroscopic tunnel junctions.

Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Xiaodong; Li, Wenjun; Islam, S. M.

By the insertion of thin In{sub x}Ga{sub 1−x}N layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors.

Tunable Nitride Josephson Junctions.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Missert, Nancy A.; Henry, Michael David; Lewis, Rupert M.

We have developed an ambient temperature, SiO 2/Si wafer - scale process for Josephson junctions based on Nb electrodes and Ta x N barriers with tunable electronic properties. The films are fabricated by magnetron sputtering. The electronic properties of the Ta xN barriers are controlled by adjusting the nitrogen flow during sputtering. This technology offers a scalable alternative to the more traditional junctions based on AlO x barriers for low - power, high - performance computing.

Development of New a-Si/c-Si Heterojunction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer)

NASA Astrophysics Data System (ADS)

Tanaka, Makoto; Taguchi, Mikio; Matsuyama, Takao; Sawada, Toru; Tsuda, Shinya; Nakano, Shoichi; Hanafusa, Hiroshi; Kuwano, Yukinori

1992-11-01

A new type of a-Si/c-Si heterojunction solar cell, called the HIT (Heterojunction with Intrinsic Thin-layer) solar cell, has been developed based on ACJ (Artificially Constructed Junction) technology. A conversion efficiency of more than 18% has been achieved, which is the highest ever value for solar cells in which the junction was fabricated at a low temperature (<200°C).

Specific features of electroluminescence in heterostructures with InSb quantum dots in an InAs matrix

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parkhomenko, Ya. A.; Ivanov, E. V.; Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru

2013-11-15

The electrical and electroluminescence properties of a single narrow-gap heterostructure based on a p-n junction in indium arsenide, containing a single layer of InSb quantum dots in the InAs matrix, are studied. The presence of quantum dots has a significant effect on the shape of the reverse branch of the current-voltage characteristic of the heterostructure. Under reverse bias, the room-temperature electroluminescence spectra of the heterostructure with quantum dots, in addition to a negative-luminescence band with a maximum at the wavelength {lambda} = 3.5 {mu}m, contained a positive-luminescence emission band at 3.8 {mu}m, caused by radiative transitions involving localized states ofmore » quantum dots at the type-II InSb/InAs heterointerface.« less

Measuring water potential (activity) from free water to oven dryness.

PubMed

Wiebe, H H

1981-12-01

Water activities (potentials) in plant materials were measured over the range from free water to oven dryness with a Spanner thermocouple psychrometer. In a two-step procedure, water was first condensed on the thermocouple junction for several minutes. The sample was then inserted under the wet thermocouple and the maximum psychrometric cooling was measured in about 10 seconds. Calibration was with saturated salt slurries of known water activities. Psychrometric cooling was a nearly linear function of the water activity and of the negative log of the water potential. The psychrometric cooling to water activity relationship agreed with wetbulb temperature depression to relative humidity relationships given in tables. Water activities of wheat grains and leaves decreased sharply in a curvilinear fashion as their water contents decreased. Some problems of the procedure are discussed.

Observation of two distinct pairs fluctuation lifetimes and supercurrents in the pseudogap regime of cuprate junctions

NASA Astrophysics Data System (ADS)

Koren, Gad; Lee, Patrick A.

2016-11-01

Pairs fluctuation supercurrents and inverse lifetimes in the pseudogap regime are reported. These were measured on epitaxial c-axis junctions of the cuprates, with a PrBa2Cu3O7-δ barrier sandwiched in between two YBa2Cu3O7-δ or doped YBa2Cu3Oy electrodes, with or without magnetic fields parallel to the a-b planes. All junctions had a Tc(high) ≈85 -90 K and a Tc(low) ≈50 -55 K electrodes, allowing us to study pairs fluctuation supercurrents and inverse lifetimes in between these two temperatures. In junctions with a pseudogap electrode under zero field, an excess current due to pair fluctuations was observed which persisted at temperatures above Tc(low) , in the pseudogap regime, and up to about Tc(high) . No such excess current was observed in junctions without an electrode with a pseudogap. The measured conductance spectra at temperatures above Tc(low) were fitted using a modified fluctuations model by Scalapino [Phys. Rev. Lett. 24, 1052 (1970), 10.1103/PhysRevLett.24.1052] of a junction with a serial resistance. We found that in the pseudogap regime, the conductance vs voltage consists of a narrow peak sitting on top of a very broad peak. This yielded two distinct pairs fluctuation lifetimes in the pseudogap electrode which differ by an order of magnitude up to about Tc(high) . Under in-plane fields, these two lifetime values remain separated in two distinct groups, which varied with increasing field moderately. We also found that detection of Amperian pairing [Phys. Rev. X 4, 031017 (2014), 10.1103/PhysRevX.4.031017] in our cuprate junctions is not feasible, due to Josephson vortices penetration into the superconducting electrodes which drove the necessary field above the depairing field.

Assessment of Corrosion, Fretting, and Material Loss of Retrieved Modular Total Knee Arthroplasties.

PubMed

Martin, Audrey J; Seagers, Kirsten A; Van Citters, Douglas W

2017-07-01

Modular junctions in total hip arthroplasties have been associated with fretting, corrosion, and debris release. The purpose of this study is to analyze damage severity in total knee arthroplasties of a single design by qualitative visual assessment and quantitative material loss measurements to evaluate implant performance and patient impact via material loss. Twenty-two modular knee retrievals of the same manufacturer were identified from an institutional review board-approved database. Junction designs included tapers with an axial screw and tapers with a radial screw. Constructs consisted of 2 metal alloys: CoCr and Ti6Al4V. Components were qualitatively scored and quantitatively measured for corrosion and fretting. Negative values represent adhered material. Statistical differences were analyzed using sign tests. Correlations were tested with a Spearman rank order test (P < .05). The median volumetric material loss and the maximum linear depth for the total population were -0.23 mm 3 and 5.84 μm, respectively. CoCr components in mixed metal junctions had higher maximum linear depth (P = .007) than corresponding Ti components. Fretting scores of Ti6Al4V alloy components in mixed metal junctions were statistically higher than the remaining groups. Taper angle did not correlate with material loss. Results suggest that CoCr components in mixed metal junctions are more vulnerable to corrosion than other components, suggesting preferential corrosion when interfacing with Ti6Al4V. Overall, although corrosion was noted in this series, material loss was low, and none were revised for clinical metal-related reaction. This suggests the clinical impact from corrosion in total knee arthroplasty is low. Copyright © 2017 Elsevier Inc. All rights reserved.

Spin Seebeck effect in a metal-single-molecule-magnet-metal junction

NASA Astrophysics Data System (ADS)

Niu, Pengbin; Liu, Lixiang; Su, Xiaoqiang; Dong, Lijuan; Luo, Hong-Gang

2018-01-01

We investigate the nonlinear regime of temperature-driven spin-related currents through a single molecular magnet (SMM), which is connected with two metal electrodes. Under a large spin approximation, the SMM is simplified to a natural two-channel model possessing spin-opposite configuration and Coulomb interaction. We find that in temperature-driven case the system can generate spin-polarized currents. More interestingly, at electron-hole symmetry point, the competition of the two channels induces a temperature-driven pure spin current. This device demonstrates that temperature-driven SMM junction shows some results different from the usual quantum dot model, which may be useful in the future design of thermal-based molecular spintronic devices.

GdN nanoisland-based GaN tunnel junctions.

PubMed

Krishnamoorthy, Sriram; Kent, Thomas F; Yang, Jing; Park, Pil Sung; Myers, Roberto C; Rajan, Siddharth

2013-06-12

Tunnel junctions could have a great impact on gallium nitride and aluminum nitride-based devices such as light-emitting diodes and lasers by overcoming critical challenges related to hole injection and p-contacts. This paper demonstrates the use of GdN nanoislands to enhance interband tunneling and hole injection into GaN p-n junctions by several orders of magnitude, resulting in low tunnel junction specific resistivity (1.3 × 10(-3) Ω-cm(2)) compared to the previous results in wide band gap semiconductors. Tunnel injection of holes was confirmed by low-temperature operation of GaN p-n junction with a tunneling contact layer, and strong electroluminescence down to 20 K. The low tunnel junction resistance combined with low optical absorption loss in GdN is very promising for incorporation in GaN-based light emitters.

Optimization of the R-SQUID noise thermometer

NASA Astrophysics Data System (ADS)

Seppä, Heikki

1986-02-01

The Josephson junction can be used to convert voltage into frequency and thus it can be used to convert voltage fluctuations generated by Johnson noise in a resistor into frequency fluctuations. As a consequence, the temperature of the resistor can be defined by measuring the variance of the frequency fluctuations. Unfortunately, the absolute determination of temperature by this approach is disturbed by several undesirable effects: a rolloff introduced by the bandwidth of the postdetection filter, additional noise caused by rf amplifiers, and a mixed noise effect caused by the nonlinearity of the Josephson junction together with rf noise in the tank circuit. Furthermore, the variance is a statistical quantity and therefore the limited number of frequency counts produces inaccuracy in a temperature measurement. In this work the total inaccuracy of the noise thermometer is analyzed and the optimal choice of the parameters is derived. A practical way to find the optimal conditions for the Josephson junction noise thermometer is discussed. The inspection shows that under the optimal conditions the total error is dependent only on the temperature under determination, the equivalent noise temperature of the preamplifier, the bias frequency of the SQUID, and the total time used for the measurement.

Transport in arrays of submicron Josephson junctions over a ground plane

NASA Astrophysics Data System (ADS)

Ho, Teressa Rae

One-dimensional (1D) and two-dimensional (2D) arrays of Al islands linked by submicron Al/Alsb{x}Osb{y}/Al tunnel junctions were fabricated on an insulating layer grown on a ground plane. The arrays were cooled to temperatures as low as 20 mK where the Josephson coupling energy Esb{J} of each junction and the charging energy Esb{C} of each island were much greater than the thermal energy ksb{B}T. The capacitance Csb{g} between each island and the ground plane was much greater than the junction capacitance C. Two classes of arrays were studied. In the first class, the normal state tunneling resistance of the junctions was much larger than the resistance quantum for single electrons, Rsb{N}≫ Rsb{Qe}equiv h/esp2≈ 25.8 kOmega, and the islands were driven normal by an applied magnetic field such that Esb{J}=0 and the array was in the Coulomb blockade regime. The arrays were made on degenerately-doped Si, thermally oxidized to a thickness of approximately 100 nm. The current-voltage (I-V) characteristics of a 1D and a 2D array were measured and found to display a threshold voltage Vsb{T} below which little current flows. Above threshold the array current I scaled as (V/Vsb{T}-1)sp{zeta}; this scaling behavior was interpreted as a dynamic critical phenomenon. A 2D array with intentionally-added island area disorder was also measured and found to have a similar threshold voltage Vsb{T} but a larger scaling exponent zeta than the array with only intrinsic disorder. In the second class of arrays, the normal state tunneling resistance of the junctions was close to the resistance quantum for Cooper pairs, Rsb{N}≈ Rsb{Q}equiv h/4esp2≈ 6.45kOmega, such that Esb{J}/Esb{C}≈1. The arrays were made on GaAs/Alsb{0.3}Gasb{0.7}As heterostructures with a two-dimensional electron gas (2DEG) approximately 100 nm below the surface. The resistance per square of the 2DEG, Rsb{g}, could be varied by applying a large voltage between the 2DEG and a metallic back gate; varying Rsb{g} varied the dissipation associated with the local electrodynamic environment. For a 2D array, the I-V characteristics made a transition from superconductor-like to insulator-like as the resistance of the ground plane Rsb{g} was increased. The zero-bias resistance Rsb0 of the array increased exponentially with Rsb{g}. A small magnetic field was applied perpendicularly to the array, and the I-V characteristics of the array changed from superconductor-like to insulator-like as the magnetic field (measured in units of frustration f, the number of flux quanta per unit cell) was increased. Increasing Rsb{g} drove the magnetic field-driven superconductor-like to insulator-like transition of the I-V characteristics to lower values of f, and increasing f drove the dissipation-driven transition to lower values of Rsb{g}. Three 1D arrays were also measured. One array displayed superconducting behavior at low temperature, and the size of the supercurrent increased, reached a maximum, and then decreased, as Rsb{g} was increased. Two arrays displayed insulating behavior at low temperature, and the size of the Coulomb gap increased with increasing Rsb{g}. The zero-bias resistance of the array Rsb0 increased faster than exponentially with Rsb{g}.

On the Relationship Between Schottky Barrier Capacitance and Mixer Performance at Cryogenic Temperatures

NASA Technical Reports Server (NTRS)

Romanofsky, Robert R.

1996-01-01

The flat-band voltage is the Schottky junction voltage required to shrink the depletion width to zero. At cryogenic temperatures, mixer diodes are generally biased and/or pumped beyond the flat-band condition to minimize conversion loss and noise figure. This occurs despite the presumed sharp increase in junction capacitance near flat-band, which should instead limit mixer performance. Past moderate forward bias, the diode C-V relationship is difficult to measure. A simple analytic expression for C(V) is usually used to model and predict mixer performance. This letter provides experimental data on C(V) at 77 K based on a microwave measurement and modeling technique. Data is also provided on the conversion loss of a singly balanced mixer optimized for 77 K operation. The connection between junction capacitance, flat-band potential, and conversion loss is examined. It is shown that the analytic expression greatly overestimates the junction capacitance that occurs as flat-band is approached.

Classical analogs for Rabi-oscillations, Ramsey-fringes, and spin-echo in Josephson junctions

NASA Astrophysics Data System (ADS)

Marchese, J. E.; Cirillo, M.; Grønbech-Jensen, N.

2007-08-01

We investigate the results of recently published experiments on the quantum behavior of Josephson circuits in terms of the classical modeling based on the resistively and capacitively-shunted (RCSJ) junction model. Our analysis shows evidence for a close analogy between the nonlinear behavior of a pulsed microwave-driven Josephson junction at low temperature and low dissipation and the experimental observations reported for the Josephson circuits. Specifically, we demonstrate that Rabi-oscillations, Ramsey-fringes, and spin-echo observations are not phenomena with a unique quantum interpretation. In fact, they are natural consequences of transients to phase-locking in classical nonlinear dynamics and can be observed in a purely classical model of a Josephson junction when the experimental recipe for the application of microwaves is followed and the experimental detection scheme followed. We therefore conclude that classical nonlinear dynamics can contribute to the understanding of relevant experimental observations of Josephson response to various microwave perturbations at very low temperature and low dissipation.

Low temperature properties of spin filter NbN/GdN/NbN Josephson junctions

NASA Astrophysics Data System (ADS)

Massarotti, D.; Caruso, R.; Pal, A.; Rotoli, G.; Longobardi, L.; Pepe, G. P.; Blamire, M. G.; Tafuri, F.

2017-02-01

A ferromagnetic Josephson junction (JJ) represents a special class of hybrid system where different ordered phases meet and generate novel physics. In this work we report on the transport measurements of underdamped ferromagnetic NbN/GdN/NbN JJs at low temperatures. In these junctions the ferromagnetic insulator gadolinium nitride barrier generates spin-filtering properties and a dominant second harmonic component in the current-phase relation. These features make spin filter junctions quite interesting also in terms of fundamental studies on phase dynamics and dissipation. We discuss the fingerprints of spin filter JJs, through complementary transport measurements, and their implications on the phase dynamics, through standard measurements of switching current distributions. NbN/GdN/NbN JJs, where spin filter properties can be controllably tuned along with the critical current density (Jc), turn to be a very relevant term of reference to understand phase dynamics and dissipation in an enlarged class of JJs, not necessarily falling in the standard tunnel limit characterized by low Jc values.

Transient thermal stresses analysis and thermal fatigue damage evaluation for skirt attachment of coke drum

NASA Astrophysics Data System (ADS)

Ambarita, H.; Siahaan, A. S.; Kawai, H.; Daimaruya, M.

2018-02-01

In the last decade, the demand for delayed coking capacity has been steadily increasing. The trend in the past 15 to 20 years has been for operators to try to maximize the output of their units by reducing cycle times. This mode of operation can result in very large temperature gradients within the drums during preheating stage and even more so during the quench cycle. This research provide the optimization estimation of fatigue life due to each for the absence of preheating stage and cutting stage. In the absence of preheating stage the decreasing of fatigue life is around 19% and the increasing of maximum stress in point 5 of shell-to-skirt junction is around 97 MPa. However for the absence of cutting stage it was found that is more severe compare to normal cycle. In this adjustment fatigue life reduce around 39% and maximum stress is increased around 154 MPa. It can concluded that for cycle optimization, eliminating preheating stage possibly can become an option due to the increasing demand of delayed coking process.

A concept of wireless and passive very-high temperature sensor

NASA Astrophysics Data System (ADS)

Nicolay, P.; Matloub, R.; Bardong, J.; Mazzalai, A.; Muralt, P.

2017-05-01

There is a need for sensors capable operating at temperatures above 1000 °C. We describe an innovative sensor that might achieve this goal. The sensor comprises two main elements: a thermocouple and a surface acoustic wave (SAW) strain sensor. The cold junction of the thermocouple is electrically connected to a highly piezoelectric thin layer, deposited on top of a SAW substrate. In operation, the voltage generated by the temperature gradient between the hot (>1000 °C) and cold junction (<350 °C) generates a strain field in the layer, which is mechanically transmitted to the substrate. This modifies the SAW propagation conditions and therefore the sensors' radiofrequency response. The change depends on the applied voltage and thus on the hot junction temperature. As SAW devices are passive elements that can be remotely interrogated, it becomes possible to infer the hot junction temperature from the radiofrequency response, i.e., to remotely read temperatures above 1000 °C, without embedded electronics. In this paper, we demonstrate the feasibility of this concept, using AlN layers deposited on Y-Z Lithium Niobate (LN). The achieved sensitivity of 80 Hz/V at 400 MHz is constant over a wide voltage range. Numerical simulations were performed to compute the main properties of the demonstrators and suggest optimization strategies. Improvements are expected from the use of stronger piezoelectric layers, such as AlScN or Pb(Ti,Zr)O3 (PZT), which could increase the sensitivity by factors of 3 and 20, as estimated from their transverse piezoelectric coefficients. As a first step in this direction, thin PZT layers have been deposited on Y-Z LN.

Microrefrigeration by a pair of normal metal/insulator/superconductor junctions

NASA Technical Reports Server (NTRS)

Leivo, M. M.; Pekola, J. P.; Averin, D. V.

1995-01-01

We suggest and demonstrate experimentally that two normal metal/insulator/superconductor (NIS) tunnel junctions combined in series to form a symmetric SINIS structure can operate as an efficient Peltier refrigerator. Specifically, it is shown that the SINIS structure with normal-state junction resistences of 1.0 and 1.1 kOmega is capable of reaching a temperature of about 100 mK starting from 300 mK. We estimate the corresponding cooling power to be 1.5 pW per total junction area of 0.8 micrometers(exp 2) at T = 300 mK. This cooling power density implies that scaling of junction area up to about 1 mm(exp 2) should bring the cooling power into the microW range.

Large resistance change on magnetic tunnel junction based molecular spintronics devices

NASA Astrophysics Data System (ADS)

Tyagi, Pawan; Friebe, Edward

2018-05-01

Molecular bridges covalently bonded to two ferromagnetic electrodes can transform ferromagnetic materials and produce intriguing spin transport characteristics. This paper discusses the impact of molecule induced strong coupling on the spin transport. To study molecular coupling effect the octametallic molecular cluster (OMC) was bridged between two ferromagnetic electrodes of a magnetic tunnel junction (Ta/Co/NiFe/AlOx/NiFe/Ta) along the exposed side edges. OMCs induced strong inter-ferromagnetic electrode coupling to yield drastic changes in transport properties of the magnetic tunnel junction testbed at the room temperature. These OMCs also transformed the magnetic properties of magnetic tunnel junctions. SQUID and ferromagnetic resonance studies provided insightful data to explain transport studies on the magnetic tunnel junction based molecular spintronics devices.

Lateral MoS2 p-n junction formed by chemical doping for use in high-performance optoelectronics.

PubMed

Choi, Min Sup; Qu, Deshun; Lee, Daeyeong; Liu, Xiaochi; Watanabe, Kenji; Taniguchi, Takashi; Yoo, Won Jong

2014-09-23

This paper demonstrates a technique to form a lateral homogeneous 2D MoS2 p-n junction by partially stacking 2D h-BN as a mask to p-dope MoS2. The fabricated lateral MoS2 p-n junction with asymmetric electrodes of Pd and Cr/Au displayed a highly efficient photoresponse (maximum external quantum efficiency of ∼7000%, specific detectivity of ∼5 × 10(10) Jones, and light switching ratio of ∼10(3)) and ideal rectifying behavior. The enhanced photoresponse and generation of open-circuit voltage (VOC) and short-circuit current (ISC) were understood to originate from the formation of a p-n junction after chemical doping. Due to the high photoresponse at low VD and VG attributed to its built-in potential, our MoS2 p-n diode made progress toward the realization of low-power operating photodevices. Thus, this study suggests an effective way to form a lateral p-n junction by the h-BN hard masking technique and to improve the photoresponse of MoS2 by the chemical doping process.

Progress toward a 30 percent-efficient, monolithic, three-junction, two-terminal concentrator solar cell for space applications

NASA Technical Reports Server (NTRS)

Partain, L. D.; Chung, B.-C.; Virshup, G. F.; Schultz, J. C.; Macmillan, H. F.; Ristow, M. Ladle; Kuryla, M. S.; Bertness, K. A.

1991-01-01

Component efficiencies of 0.2/sq cm cells at approximately 100x AMO light concentration and 80 C temperatures are not at 15.3 percent for a 1.9 eV AlGaAs top cell, 9.9 percent for a 1.4 eV GaAs middle cell under a 1.9 eV AlGaAs filter, and 2.4 percent for a bottom 1.0 eV InGaAs cell under a GaAs substrate. The goal is to continue improvement in these performance levels and to sequentially grow these devices on a single substrate to give 30 percent efficient, monolithic, two-terminal, three-junction space concentrator cells. The broad objective is a 30 percent efficient monolithic two-terminal cell that can operate under 25 to 100x AMO light concentrations and at 75 to 100 C cell temperatures. Detailed modeling predicts that this requires three junctions. Two options are being pursued, and both use a 1.9 eV AlGaAs top junction and a 1.4 eV GaAs middle junction grown by a 1 atm OMVPE on a lattice matched substrate. Option 1 uses a low-doped GaAs substrate with a lattice mismatched 1.0 eV InGaAs cell formed on the back of the substrate. Option 2 uses a Ge substrate to which the AlGaAs and GaAs top junctions are lattice matched, with a bottom 0.7 eV Ge junction formed near the substrate interface with the GaAs growth. The projected efficiency contributions are near 16, 11, and 3 percent, respectively, from the top, middle, and bottom junctions.

In Situ Irradiation and Measurement of Triple Junction Solar Cells at Low Intensity, Low Temperature (LILT) Conditions

NASA Technical Reports Server (NTRS)

Harris, R.D.; Imaizumi, M.; Walters, R.J.; Lorentzen, J.R.; Messenger, S.R.; Tischler, J.G.; Ohshima, T.; Sato, S.; Sharps, P.R.; Fatemi, N.S.

2008-01-01

The performance of triple junction InGaP/(In)GaAs/Ge space solar cells was studied following high energy electron irradiation at low temperature. Cell characterization was carried out in situ at the irradiation temperature while using low intensity illumination, and, as such, these conditions reflect those found for deep space, solar powered missions that are far from the sun. Cell characterization consisted of I-V measurements and quantum efficiency measurements. The low temperature irradiations caused substantial degradation that differs in some ways from that seen after room temperature irradiations. The short circuit current degrades more at low temperature while the open circuit voltage degrades more at room temperature. A room temperature anneal after the low temperature irradiation produced a substantial recovery in the degradation. Following irradiation at both temperatures and an extended room temperature anneal, quantum efficiency measurement suggests that the bulk of the remaining damage is in the (In)GaAs sub-cell

The Performance of Advanced III-V Solar Cells

NASA Technical Reports Server (NTRS)

Mueller, Robert L.; Gaddy, Edward; Day, John H. (Technical Monitor)

2002-01-01

Test results show triple junction solar cells with efficiencies as high as 27% at 28C and 136.7 mw/sq cm. Triple junction cells also achieve up to 27.5% at -120 C and 5 mw/sq cm, conditions applicable to missions to Jupiter. Some triple junction cells show practically no degradation as a result of Low Intensity Low Temperature (LILT) effects, while others show some; this degradation can be overcome with minor changes to the cell design.

Room-temperature current blockade in atomically defined single-cluster junctions

NASA Astrophysics Data System (ADS)

Lovat, Giacomo; Choi, Bonnie; Paley, Daniel W.; Steigerwald, Michael L.; Venkataraman, Latha; Roy, Xavier

2017-11-01

Fabricating nanoscopic devices capable of manipulating and processing single units of charge is an essential step towards creating functional devices where quantum effects dominate transport characteristics. The archetypal single-electron transistor comprises a small conducting or semiconducting island separated from two metallic reservoirs by insulating barriers. By enabling the transfer of a well-defined number of charge carriers between the island and the reservoirs, such a device may enable discrete single-electron operations. Here, we describe a single-molecule junction comprising a redox-active, atomically precise cobalt chalcogenide cluster wired between two nanoscopic electrodes. We observe current blockade at room temperature in thousands of single-cluster junctions. Below a threshold voltage, charge transfer across the junction is suppressed. The device is turned on when the temporary occupation of the core states by a transiting carrier is energetically enabled, resulting in a sequential tunnelling process and an increase in current by a factor of ∼600. We perform in situ and ex situ cyclic voltammetry as well as density functional theory calculations to unveil a two-step process mediated by an orbital localized on the core of the cluster in which charge carriers reside before tunnelling to the collector reservoir. As the bias window of the junction is opened wide enough to include one of the cluster frontier orbitals, the current blockade is lifted and charge carriers can tunnel sequentially across the junction.

Thermal considerations in the use of solid state power amplifiers on the GOES spacecraft

NASA Technical Reports Server (NTRS)

Mallette, L.; Darby, S.; Baatz, M.; Ujihara, K.

1984-01-01

The use of solid state power amplifiers (SSPA) in satellites has been quite prevalent in several frequency bands. This trend is evidenced by the use of SSPAs at Hughes in the UHF band (Leasat/Syncom IV), S band (GOES), C band (Telstar), and SHF band. The junction temperature of the transistor is the driving requirement which determines the lifetime of the transistor, SSPA, and the payload. This temperature is determined by the transistor characteristics, use of the device, and mounting temperature of the SSPA. The temperature of the spacecraft in the area of the SSPA can be controlled by active or passive means. The various factors and interrelationships used to calculate and control the temperatures of SSPAs are described. The thermal design and calculation of junction temperatures are exemplified with the Geostationary Operational Environmental Satellite spacecraft.

Optimal Normal Tissue Sparing in Craniospinal Axis Irradiation Using IMRT With Daily Intrafractionally Modulated Junction(s)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kusters, Johannes M.A.M.; Louwe, Rob J.W.; Kollenburg, Peter G.M. van

2011-12-01

Purpose: To develop a treatment technique for craniospinal irradiation using intensity-modulated radiotherapy (IMRT) with improved dose homogeneity at the field junction(s), increased target volume conformity, and minimized dose to the organs at risk (OARs). Methods and Materials: Five patients with high-risk medulloblastoma underwent CT simulation in supine position. For each patient, an IMRT plan with daily intrafractionally modulated junction(s) was generated, as well as a treatment plan based on conventional three-dimensional planning (3DCRT). A dose of 39.6 Gy in 22 daily fractions of 1.8 Gy was prescribed. Dose-volume parameters for target volumes and OARs were compared for the two techniques.more » Results: The maximum dose with IMRT was <107% in all patients. V{sub <95} and V{sub >107} were <1 cm{sup 3} for IMRT compared with 3-9 cm{sup 3} for the craniospinal and 26-43 cm{sup 3} for the spinal-spinal junction with 3DCRT. These observations corresponded with a lower homogeneity index and a higher conformity index for the spinal planning target volume with IMRT. IMRT provided considerable sparing of acute and late reacting tissues. V{sub 75} for the esophagus, gastroesophageal junction, and intestine was 81%, 81%, and 22% with 3DCRT versus 5%, 0%, and 1% with IMRT, respectively. V{sub 75} for the heart and thyroid was 42% and 32% vs. 0% with IMRT. Conclusion: IMRT with daily intrafractionally modulated junction results in a superior target coverage and junction homogeneity compared with 3DCRT. A significant dose reduction can be obtained for acute as well as late-reacting tissues.« less

Fabrication process of superconducting integrated circuits with submicron Nb/AlOx/Nb junctions using electron-beam direct writing technique

NASA Astrophysics Data System (ADS)

Aoyagi, Masahiro; Nakagawa, Hiroshi

1997-07-01

For enhancing operating speed of a superconducting integrated circuit (IC), the device size must be reduced into the submicron level. For this purpose, we have introduced electron beam (EB) direct writing technique into the fabrication process of a Nb/AlOx/Nb Josephson IC. A two-layer (PMMA/(alpha) M-CMS) resist method called the portable conformable mask (PCM) method was utilized for having a high aspect ratio. The electron cyclotron resonance (ECR) plasma etching technique was utilized. We have fabricated micron or submicron-size Nb/AlOx/Nb Josephson junctions, where the size of the junction was varied from 2 micrometer to 0.5 micrometer at 0.1 micrometer intervals. These junctions were designed for evaluating the spread of the junction critical current. We achieved minimum-to-maximum Ic spread of plus or minus 13% for 0.81-micrometer-square (plus or minus 16% for 0.67-micrometer-square) 100 junctions spreading in 130- micrometer-square area. The size deviation of 0.05 micrometer was estimated from the spread values. We have successfully demonstrated a small-scale logic IC with 0.9-micrometer-square junctions having a 50 4JL OR-gate chain, where 4JL means four junctions logic family. The circuit was designed for measuring the gate delay. We obtained a preliminary result of the OR- gate logic delay, where the minimum delay was 8.6 ps/gate.

Exceeding the solar cell Shockley-Queisser limit via thermal up-conversion of low-energy photons

NASA Astrophysics Data System (ADS)

Boriskina, Svetlana V.; Chen, Gang

2014-03-01

Maximum efficiency of ideal single-junction photovoltaic (PV) cells is limited to 33% (for 1 sun illumination) by intrinsic losses such as band edge thermalization, radiative recombination, and inability to absorb below-bandgap photons. This intrinsic thermodynamic limit, named after Shockley and Queisser (S-Q), can be exceeded by utilizing low-energy photons either via their electronic up-conversion or via the thermophotovoltaic (TPV) conversion process. However, electronic up-conversion systems have extremely low efficiencies, and practical temperature considerations limit the operation of TPV converters to the narrow-gap PV cells. Here we develop a conceptual design of a hybrid TPV platform, which exploits thermal up-conversion of low-energy photons and is compatible with conventional silicon PV cells by using spectral and directional selectivity of the up-converter. The hybrid platform offers sunlight-to-electricity conversion efficiency exceeding that imposed by the S-Q limit on the corresponding PV cells across a broad range of bandgap energies, under low optical concentration (1-300 suns), operating temperatures in the range 900-1700 K, and in simple flat panel designs. We demonstrate maximum conversion efficiency of 73% under illumination by non-concentrated sunlight. A detailed analysis of non-ideal hybrid platforms that allows for up to 15% of absorption/re-emission losses yields limiting efficiency value of 45% for Si PV cells.

The shot noise thermometer

NASA Astrophysics Data System (ADS)

Spietz, Lafe Frederick

This thesis describes the development and testing of the shot noise thermometer, or SNT, a new kind of noise thermometer based on the combined thermal and shot noise of a tunnel junction in the non-superconducting state. In the shot noise thermometer, the noise power from a tunnel junction is measured as a function of the DC voltage across the junction, and the temperature is determined from the voltage dependence of the noise. This voltage dependence follows directly from the Fermi statistics of electrons in a metal, and is independent of the gain or noise temperature of the microwave amplifiers and detector used to measure the noise. Since the shot noise thermometer requires no calibration from an external temperature standard, it is a primary thermometer. In this thesis I demonstrate the operation of the shot noise thermometer over four orders of magnitude in temperature, from the base temperature of a dilution refrigerator to room temperature. Because of its wide range and the fact that it requires no outside calibration (it is a primary thermometer), the SNT is useful as a thermometer for general use in dilution refrigerators. In addition, the shot noise thermometer has sufficient accuracy to be useful as a potential temperature standard. This thesis discusses both of these applications as well as basic physics questions about the operation of the SNT and prospects for future development of the SNT technology.

Effects of the magnetic field variation on the spin wave interference in a magnetic cross junction

NASA Astrophysics Data System (ADS)

Balynskiy, M.; Chiang, H.; Kozhevnikov, A.; Dudko, G.; Filimonov, Y.; Balandin, A. A.; Khitun, A.

2018-05-01

This article reports results of the investigation of the effect of the external magnetic field variation on the spin wave interference in a magnetic cross junction. The experiments were performed using a micrometer scale Y3Fe5O12 cross structure with a set of micro-antennas fabricated on the edges of the cross arms. Two of the antennas were used for the spin wave excitation while a third antenna was used for detecting the inductive voltage produced by the interfering spin waves. It was found that a small variation of the bias magnetic field may result in a significant change of the output inductive voltage. The effect is most prominent under the destructive interference condition. The maximum response exceeds 30 dB per 0.1 Oe at room temperature. It takes a relatively small bias magnetic field variation of about 1 Oe to drive the system from the destructive to the constructive interference conditions. The switching is accompanied by a significant, up to 50 dB, change in the output voltage. The obtained results demonstrate a feasibility of the efficient spin wave interference control by an external magnetic field, which may be utilized for engineering novel type of magnetometers and magnonic logic devices.

Radiation-stimulated processes in transistor temperature sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pavlyk, B. V.; Grypa, A. S.

2016-05-15

The features of the radiation-stimulated changes in the I–V and C–V characteristics of the emitter–base junction in KT3117 transistors are considered. It is shown that an increase in the current through the emitter junction is observed at the initial stage of irradiation (at doses of D < 4000 Gy for the “passive” irradiation mode and D < 5200 Gy for the “active” mode), which is caused by the effect of radiation-stimulated ordering of the defect-containing structure of the p–n junction. It is also shown that the X-ray irradiation (D < 14000 Gy), the subsequent relaxation (96 h), and thermal annealingmore » (2 h at 400 K) of the transistor temperature sensors under investigation result in an increase in their radiation resistance.« less

Classical heat transport in anharmonic molecular junctions: exact solutions.

PubMed

Liu, Sha; Agarwalla, Bijay Kumar; Wang, Jian-Sheng; Li, Baowen

2013-02-01

We study full counting statistics for classical heat transport through anharmonic or nonlinear molecular junctions formed by interacting oscillators. An analytical result of the steady-state heat flux for an overdamped anharmonic junction with arbitrary temperature bias is obtained. It is found that the thermal conductance can be expressed in terms of a temperature-dependent effective force constant. The role of anharmonicity is identified. We also give the general formula for the second cumulant of heat in steady state, as well as the average geometric heat flux when two system parameters are modulated adiabatically. We present an anharmonic example for which all cumulants for heat can be obtained exactly. For a bounded single oscillator model with mass we found that the cumulants are independent of the nonlinear potential.

Current-driven thermo-magnetic switching in magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Kravets, A. F.; Polishchuk, D. M.; Pashchenko, V. A.; Tovstolytkin, A. I.; Korenivski, V.

2017-12-01

We investigate switching of magnetic tunnel junctions (MTJs) driven by the thermal effect of the transport current through the junctions. The switching occurs in a specially designed composite free layer, which acts as one of the MTJ electrodes, and is due to a current-driven ferro-to-paramagnetic Curie transition with the associated exchange decoupling within the free layer leading to magnetic reversal. We simulate the current and heat propagation through the device and show how heat focusing can be used to improve the power efficiency. The Curie-switch MTJ demonstrated in this work has the advantage of being highly tunable in terms of its operating temperature range, conveniently to or just above room temperature, which can be of technological significance and competitive with the known switching methods using spin-transfer torques.

Optimization of niobium tunnel junctions as X-ray detectors

NASA Technical Reports Server (NTRS)

Saulnier, Gregory G.; Zacher, Robert A.; Van Vechten, Deborah; Boyer, Craig; Lovellette, Michael N.; Fritz, Gilbert G.; Soulen, Robert J.; Kang, Joonhee; Blamire, Mark; Kirk, Eugenie C. G.

1992-01-01

We report on our ongoing work using Nb/Al/AlO(x)/Nb junctions for the detection of X-rays. Detectors based on superconducting tunneling junctions offer the prospect of resolution over an order of magnitude higher than is obtainable with the current generation of semiconductor-based detectors. Results of measurements taken at 1.85 K (a temperature achievable with current space flight technology) include the current-voltage (I-V) curve, subgap current vs temperature, the dependence of the superconducting current on the applied magnetic field (Fraunhofer pattern), X-ray pulses, and the spectra from a 6 keV X-ray source which gave an intrinsic device resolution of approximately 700 eV. The collection of more than 10 exp 5 electrons per 6 keV photon is established.

Holliday Junction Thermodynamics and Structure: Coarse-Grained Simulations and Experiments

NASA Astrophysics Data System (ADS)

Wang, Wujie; Nocka, Laura M.; Wiemann, Brianne Z.; Hinckley, Daniel M.; Mukerji, Ishita; Starr, Francis W.

2016-03-01

Holliday junctions play a central role in genetic recombination, DNA repair and other cellular processes. We combine simulations and experiments to evaluate the ability of the 3SPN.2 model, a coarse-grained representation designed to mimic B-DNA, to predict the properties of DNA Holliday junctions. The model reproduces many experimentally determined aspects of junction structure and stability, including the temperature dependence of melting on salt concentration, the bias between open and stacked conformations, the relative populations of conformers at high salt concentration, and the inter-duplex angle (IDA) between arms. We also obtain a close correspondence between the junction structure evaluated by all-atom and coarse-grained simulations. We predict that, for salt concentrations at physiological and higher levels, the populations of the stacked conformers are independent of salt concentration, and directly observe proposed tetrahedral intermediate sub-states implicated in conformational transitions. Our findings demonstrate that the 3SPN.2 model captures junction properties that are inaccessible to all-atom studies, opening the possibility to simulate complex aspects of junction behavior.

Entropy Flow Through Near-Critical Quantum Junctions

NASA Astrophysics Data System (ADS)

Friedan, Daniel

2017-05-01

This is the continuation of Friedan (J Stat Phys, 2017. doi: 10.1007/s10955-017-1752-8). Elementary formulas are derived for the flow of entropy through a circuit junction in a near-critical quantum circuit close to equilibrium, based on the structure of the energy-momentum tensor at the junction. The entropic admittance of a near-critical junction in a bulk-critical circuit is expressed in terms of commutators of the chiral entropy currents. The entropic admittance at low frequency, divided by the frequency, gives the change of the junction entropy with temperature—the entropic "capacitance". As an example, and as a check on the formalism, the entropic admittance is calculated explicitly for junctions in bulk-critical quantum Ising circuits (free fermions, massless in the bulk), in terms of the reflection matrix of the junction. The half-bit of information capacity per end of critical Ising wire is re-derived by integrating the entropic "capacitance" with respect to temperature, from T=0 to T=∞.

Ballistic Josephson junctions based on CVD graphene

NASA Astrophysics Data System (ADS)

Li, Tianyi; Gallop, John; Hao, Ling; Romans, Edward

2018-04-01

Josephson junctions with graphene as the weak link between superconductors have been intensely studied in recent years, with respect to both fundamental physics and potential applications. However, most of the previous work was based on mechanically exfoliated graphene, which is not compatible with wafer-scale production. To overcome this limitation, we have used graphene grown by chemical vapour deposition (CVD) as the weak link of Josephson junctions. We demonstrate that very short, wide CVD-graphene-based Josephson junctions with Nb electrodes can work without any undesirable hysteresis in their electrical characteristics from 1.5 K down to a base temperature of 320 mK, and their gate-tuneable critical current shows an ideal Fraunhofer-like interference pattern in a perpendicular magnetic field. Furthermore, for our shortest junctions (50 nm in length), we find that the normal state resistance oscillates with the gate voltage, consistent with the junctions being in the ballistic regime, a feature not previously observed in CVD-graphene-based Josephson junctions.

High reliability and high performance of 9xx-nm single emitter laser diodes

NASA Astrophysics Data System (ADS)

Bao, L.; Leisher, P.; Wang, J.; Devito, M.; Xu, D.; Grimshaw, M.; Dong, W.; Guan, X.; Zhang, S.; Bai, C.; Bai, J. G.; Wise, D.; Martinsen, R.

2011-03-01

Improved performance and reliability of 9xx nm single emitter laser diodes are presented. To date, over 15,000 hours of accelerated multi-cell lifetest reliability data has been collected, with drive currents from 14A to 18A and junction temperatures ranging from 60°C to 110°C. Out of 208 devices, 14 failures have been observed so far. Using established accelerated lifetest analysis techniques, the effects of temperature and power acceleration are assessed. The Mean Time to Failure (MTTF) is determined to be >30 years, for use condition 10W and junction temperature 353K (80°C), with 90% statistical confidence.

Modified laser-annealing process for improving the quality of electrical P-N junctions and devices

DOEpatents

Wood, Richard F.; Young, Rosa T.

1984-01-01

The invention is a process for producing improved electrical-junction devices. The invention is applicable, for example, to a process in which a light-sensitive electrical-junction device is produced by (1) providing a body of crystalline semiconductor material having a doped surface layer, (2) irradiating the layer with at least one laser pulse to effect melting of the layer, (3) permitting recrystallization of the melted layer, and (4) providing the resulting body with electrical contacts. In accordance with the invention, the fill-factor and open-circuit-voltage parameters of the device are increased by conducting the irradiation with the substrate as a whole at a selected elevated temperature, the temperature being selected to effect a reduction in the rate of the recrystallization but insufficient to effect substantial migration of impurities within the body. In the case of doped silicon substrates, the substrate may be heated to a temperature in the range of from about 200.degree. C. to 500.degree. C.

Molecular electronics--resonant transport through single molecules.

PubMed

Lörtscher, Emanuel; Riel, Heike

2010-01-01

The mechanically controllable break-junction technique (MCBJ) enables us to investigate charge transport through an individually contacted and addressed molecule in ultra-high vacuum (UHV) environment at variable temperature ranging from room temperature down to 4 K. Using a statistical measurement and analysis approach, we acquire current-voltage (I-V) characteristics during the repeated formation, manipulation, and breaking of a molecular junction. At low temperatures, voltages accessing the first molecular orbitals in resonance can be applied, providing spectroscopic information about the junction's energy landscape, in particular about the molecular level alignment in respect to the Fermi energy of the electrodes. Thereby, we can investigate the non-linear transport properties of various types of functional molecules and explore their potential use as functional building blocks for future nano-electronics. An example will be given by the reversible and controllable switching between two distinct conductive states of a single molecule. As a proof-of-principle for functional molecular devices, a single-molecule memory element will be demonstrated.

Evidence for a new excitation at the interface between a high- T c superconductor and a topological insulator

DOE PAGES

Zareapour, Parisa; Hayat, Alex; Zhao, Shu Yang F.; ...

2014-12-09

In this research, high-temperature superconductors exhibit a wide variety of novel excitations. If contacted with a topological insulator, the lifting of spin rotation symmetry in the surface states can lead to the emergence of unconventional superconductivity and novel particles. In pursuit of this possibility, we fabricated high critical-temperature (T c ~ 85 K) superconductor/topological insulator (Bi₂Sr₂CaCu₂O₈₊ δ/Bi₂Te₂Se) junctions. Below 75 K, a zero-bias conductance peak (ZBCP) emerges in the differential conductance spectra of this junction. The magnitude of the ZBCP is suppressed at the same rate for magnetic fields applied parallel or perpendicular to the junction. Furthermore, it can stillmore » be observed and does not split up to at least 8.5 T. The temperature and magnetic field dependence of the excitation we observe appears to fall outside the known paradigms for a ZBCP.« less

Effect of Impurities on the Josephson Current through Helical Metals: Exploiting a Neutrino Paradigm.

PubMed

Ghaemi, Pouyan; Nair, V P

2016-01-22

In this Letter we study the effect of time-reversal symmetric impurities on the Josephson supercurrent through two-dimensional helical metals such as on a topological insulator surface state. We show that, contrary to the usual superconducting-normal metal-superconducting junctions, the suppression of the supercurrent in the superconducting-helical metal-superconducting junction is mainly due to fluctuations of impurities in the junctions. Our results, which are a condensed matter realization of a part of the Mikheyev-Smirnov-Wolfenstein effect for neutrinos, show that the relationship between normal state conductance and the critical current of Josephson junctions is significantly modified for Josephson junctions on the surface of topological insulators. We also study the temperature dependence of the supercurrent and present a two fluid model which can explain some of the recent experimental results in Josephson junctions on the edge of topological insulators.

Effect of Impurities on the Josephson Current through Helical Metals: Exploiting a Neutrino Paradigm

NASA Astrophysics Data System (ADS)

Ghaemi, Pouyan; Nair, V. P.

2016-01-01

In this Letter we study the effect of time-reversal symmetric impurities on the Josephson supercurrent through two-dimensional helical metals such as on a topological insulator surface state. We show that, contrary to the usual superconducting-normal metal-superconducting junctions, the suppression of the supercurrent in the superconducting-helical metal-superconducting junction is mainly due to fluctuations of impurities in the junctions. Our results, which are a condensed matter realization of a part of the Mikheyev-Smirnov-Wolfenstein effect for neutrinos, show that the relationship between normal state conductance and the critical current of Josephson junctions is significantly modified for Josephson junctions on the surface of topological insulators. We also study the temperature dependence of the supercurrent and present a two fluid model which can explain some of the recent experimental results in Josephson junctions on the edge of topological insulators.

Electrical Properties of a p-n Heterojunction of Li-Doped NiO and Al-Doped ZnO for Thermoelectrics

NASA Astrophysics Data System (ADS)

Desissa, Temesgen D.; Schrade, Matthias; Norby, Truls

2018-06-01

The electrical properties of a p-n heterojunction of polycrystalline p-type Ni0.98Li0.02O and n-type Zn0.98Al0.02O have been investigated for potential applications in high-temperature oxide-based thermoelectric generators without metallic interconnects. Current-voltage characteristics of the junction were measured in a two-electrode setup in ambient air at 500-1000°C. The resistance and rectification of the junction decreased with increasing temperature. A non-ideal Shockley diode model was used to fit the measured current-voltage data in order to extract characteristic parameters of the junction, such as area-specific series resistance R s and parallel shunt resistance R p, non-ideality factor, and the saturation current density. R s and R p decreased exponentially with temperature, with activation energies of 0.4 ± 0.1 eV and 1.1 ± 0.2 eV, respectively. The interface resistance of the direct p-n junction studied here is as such too high for practical applications in thermoelectrics. However, it is demonstrated that it can be reduced by an order of magnitude by using a composite of the individual materials at the interface, yielding a large effective contact area.

Design and optimization of ARC less InGaP/GaAs single-/multi-junction solar cells with tunnel junction and back surface field layers

NASA Astrophysics Data System (ADS)

Chee, Kuan W. A.; Hu, Yuning

2018-07-01

There has always been an inexorable interest in the solar industry in boosting the photovoltaic conversion efficiency. This paper presents a theoretical and numerical simulation study of the effects of key design parameters on the photoelectric performance of single junction (InGaP- or GaAs-based) and dual junction (InGaP/GaAs) inorganic solar cells. The influence of base layer thickness, base doping concentration, junction temperature, back surface field layer composition and thickness, and tunnel junction material, were correlated with open circuit voltage, short-circuit current, fill factor and power conversion efficiency performance. The InGaP/GaAs dual junction solar cell was optimized with the tunnel junction and back surface field designs, yielding a short-circuit current density of 20.71 mAcm-2 , open-circuit voltage of 2.44 V and fill factor of 88.6%, and guaranteeing an optimal power conversion efficiency of at least 32.4% under 1 sun AM0 illumination even without an anti-reflective coating.

Thermodynamic characterization of a triple-helical three-way junction containing a Hoogsteen branch point.

PubMed

Hüsler, P L; Klump, H H

1995-09-10

We have designed a Hoogsteen (HG) triple-helical three-way junction (ternary complex) constructed from three 33-mer oligonucleotides based on the same subset of sequences used for the Watson-Crick (WC) triple-helical three-way junction, characterized previously (P. L. Hüsler and H. H. Klump (1994) Arch. Biochem. Biophys., 313, 29-38). The junction differs primarily in the assembly of the branch point and the ends of the arms. The three oligonucleotides can each fold into a WC hairpin, linked by a four-member cytosine loop, each containing a homo-pyrimidine 10-mer single-strand extension. On lowering the pH (between 6 and 4), the extensions mutually associate to one of the other hairpins via Hoogsteen (HG) hydrogen bonding. Collectively, this process results in the formation of the branch point and the triple-helical arms. The HG triple-helical three-way junction is characterized by gel electrophoresis, circular dichroism, uv melting, and differential scanning calorimetry. The junction undergoes thermal unfolding in two distinct temperature regions. In the temperature range 15 to 50 degrees C loss of HG base pairing results in the dissociation of the three-way junction. Between 55 and 95 degrees C the resulting hairpins undergo further successive unfolding. The overall calorimetric unfolding enthalpy and entropy changes associated with the loss of HG base pairing are approximately equal to the sum of the enthalpy and entropy changes associated with the dissociation of the HG base pairing in the isolated arms (170.6 kcal.mol-1; 540.1 cal.mol-1.K-1). It is apparent from these results that in the proximity of the branch point the structure is not perturb or strain. This result is contrary to the results obtained for the WC triple-helical three-way and for three-way junctions constructed from canonical double-helical DNA. Complete folding of the junction requires either high Na+ (600 mM) ion concentrations or 40-60 mM Mg2+.

Molecular Diffusion through Cyanobacterial Septal Junctions.

PubMed

Nieves-Morión, Mercedes; Mullineaux, Conrad W; Flores, Enrique

2017-01-03

Heterocyst-forming cyanobacteria grow as filaments in which intercellular molecular exchange takes place. During the differentiation of N 2 -fixing heterocysts, regulators are transferred between cells. In the diazotrophic filament, vegetative cells that fix CO 2 through oxygenic photosynthesis provide the heterocysts with reduced carbon and heterocysts provide the vegetative cells with fixed nitrogen. Intercellular molecular transfer has been traced with fluorescent markers, including calcein, 5-carboxyfluorescein, and the sucrose analogue esculin, which are observed to move down their concentration gradient. In this work, we used fluorescence recovery after photobleaching (FRAP) assays in the model heterocyst-forming cyanobacterium Anabaena sp. strain PCC 7120 to measure the temperature dependence of intercellular transfer of fluorescent markers. We find that the transfer rate constants are directly proportional to the absolute temperature. This indicates that the "septal junctions" (formerly known as "microplasmodesmata") linking the cells in the filament allow molecular exchange by simple diffusion, without any activated intermediate state. This constitutes a novel mechanism for molecular transfer across the bacterial cytoplasmic membrane, in addition to previously characterized mechanisms for active transport and facilitated diffusion. Cyanobacterial septal junctions are functionally analogous to the gap junctions of metazoans. Although bacteria are frequently considered just as unicellular organisms, there are bacteria that behave as true multicellular organisms. The heterocyst-forming cyanobacteria grow as filaments in which cells communicate. Intercellular molecular exchange is thought to be mediated by septal junctions. Here, we show that intercellular transfer of fluorescent markers in the cyanobacterial filament has the physical properties of simple diffusion. Thus, cyanobacterial septal junctions are functionally analogous to metazoan gap junctions, although their molecular components appear unrelated. Like metazoan gap junctions, the septal junctions of cyanobacteria allow the rapid intercellular exchange of small molecules, without stringent selectivity. Our finding expands the repertoire of mechanisms for molecular transfer across the plasma membrane in prokaryotes. Copyright © 2017 Nieves-Morión et al.

Spin valve-like magnetic tunnel diode exhibiting giant positive junction magnetoresistance at low temperature in Co2MnSi/SiO2/p-Si heterostructure

NASA Astrophysics Data System (ADS)

Maji, Nilay; Kar, Uddipta; Nath, T. K.

2018-02-01

The rectifying magnetic tunnel diode has been fabricated by growing Co2MnSi (CMS) Heusler alloy film carefully on a properly cleaned p-Si (100) substrate with the help of electron beam physical vapor deposition technique and its structural, electrical and magnetic properties have been experimentally investigated in details. The electronic- and magneto-transport properties at various isothermal conditions have been studied in the temperature regime of 78-300 K. The current-voltage ( I- V) characteristics of the junction show an excellent rectifying magnetic tunnel diode-like behavior throughout that temperature regime. The current ( I) across the junction has been found to decrease with the application of a magnetic field parallel to the plane of the CMS film clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. When forward dc bias is applied to the heterostructure, the I- V characteristics are highly influenced on turning on the field B = 0.5 T at 78 K, and the forward current reduces abruptly (99.2% current reduction at 3 V) which is nearly equal to the order of the magnitude of the current observed in the reverse bias. Hence, our Co2MnSi/SiO2/p-Si heterostructure can perform in off ( I off)/on ( I on) states with the application of non-zero/zero magnetic field like a spin valve at low temperature (78 K).

Photovoltaic Power for Future NASA Missions

NASA Technical Reports Server (NTRS)

Landis, Geoffrey; Bailey, Sheila G.; Lyons, Valerie J. (Technical Monitor)

2002-01-01

Recent advances in crystalline solar cell technology are reviewed. Dual-junction and triple-junction solar cells are presently available from several U. S. vendors. Commercially available triple-junction cells consisting of GaInP, GaAs, and Ge layers can produce up to 27% conversion efficiency in production lots. Technology status and performance figures of merit for currently available photovoltaic arrays are discussed. Three specific NASA mission applications are discussed in detail: Mars surface applications, high temperature solar cell applications, and integrated microelectronic power supplies for nanosatellites.

Large resistance change on magnetic tunnel junction based molecular spintronics devices

DOE PAGES

Tyagi, Pawan; Friebe, Edward

2018-01-12

Here, molecular bridges covalently bonded to two ferromagnetic electrodes can transform ferromagnetic materials and produce intriguing spin transport characteristics. This paper discusses the impact of molecule induced strong coupling on the spin transport. To study molecular coupling effect the octametallic molecular cluster (OMC) was bridged between two ferromagnetic electrodes of a magnetic tunnel junction (Ta/Co/NiFe/AlOx/NiFe/Ta) along the exposed side edges. OMCs induced strong inter-ferromagnetic electrode coupling to yield drastic changes in transport properties of the magnetic tunnel junction testbed at the room temperature. These OMCs also transformed the magnetic properties of magnetic tunnel junctions. SQUID and ferromagnetic resonance studies providedmore » insightful data to explain transport studies on the magnetic tunnel junction based molecular spintronics devices.« less

Large resistance change on magnetic tunnel junction based molecular spintronics devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tyagi, Pawan; Friebe, Edward

Here, molecular bridges covalently bonded to two ferromagnetic electrodes can transform ferromagnetic materials and produce intriguing spin transport characteristics. This paper discusses the impact of molecule induced strong coupling on the spin transport. To study molecular coupling effect the octametallic molecular cluster (OMC) was bridged between two ferromagnetic electrodes of a magnetic tunnel junction (Ta/Co/NiFe/AlOx/NiFe/Ta) along the exposed side edges. OMCs induced strong inter-ferromagnetic electrode coupling to yield drastic changes in transport properties of the magnetic tunnel junction testbed at the room temperature. These OMCs also transformed the magnetic properties of magnetic tunnel junctions. SQUID and ferromagnetic resonance studies providedmore » insightful data to explain transport studies on the magnetic tunnel junction based molecular spintronics devices.« less

Impact of spectral irradiance distribution and temperature on the outdoor performance of concentrator photovoltaic system

NASA Astrophysics Data System (ADS)

Husna, Husyira Al; Shibata, Naoki; Sawano, Naoki; Ueno, Seiya; Ota, Yasuyuki; Minemoto, Takashi; Araki, Kenji; Nishioka, Kensuke

2013-09-01

Multi-junction solar cell is designed to have considerable effect towards the solar spectrum distribution so that the maximum solar radiation could be absorbed hence, enhancing the energy conversion efficiency of the cell. Due to its application in CPV system, the system's characteristics are more sensitive to environmental factor in comparison to flat-plate PV system which commonly equipped with Si-based solar cell. In this paper, the impact of environmental factors i.e. average photon energy (APE) and temperature of solar cell (Tcell) towards the performance of the tracking type CPV system were discussed. A year data period of direct spectral irradiance, cell temperature, and power output which recorded from November 2010 to October 2011 at a CPV system power generator plant located at Miyazaki, Japan was used in this study. The result showed that most frequent condition during operation was at APE = 1.87±0.005eV, Tcell = 65±2.5°C with performance ratio of 83.9%. Furthermore, an equivalent circuit simulation of a CPV subsystem in module unit was conducted in order to investigate the influence of environmental factors towards the performance of the module.

Modelling and performance of Nb SIS mixers in the 1.3 mm and 0.8 mm bands

NASA Technical Reports Server (NTRS)

Karpov, A.; Carter, M.; Lazareff, B.; Billon-Pierron, D.; Gundlach, K. H.

1992-01-01

We describe the modeling and subsequent improvements of SIS waveguide mixers for the 200-270 and 330-370 GHz bands (Blundell, Carter, and Gundlach 1988, Carter et al 1991). These mixers are constructed for use in receivers on IRAM radiotelescopes on Pico Veleta (Spain, Sierra Nevada) and Plateau de Bure (French Alps), and must meet specific requirements. The standard reduced height waveguide structure with suspended stripline is first analyzed and a model is validated through comparison with scale model and working scale measurements. In the first step, the intrinsic limitations of the standard mixer structure are identified, and the parameters are optimized bearing in mind the radioastronomical applications. In the second step, inductive tuning of the junctions is introduced and optimized for minimum noise and maximum bandwidth. In the 1.3 mm band, a DSB receiver temperature of less than 110 K (minimum 80 K) is measured from 180 through 260 GHz. In the 0.8 mm band, a DSB receiver temperature of less than 250 K (minimum 175 K) is obtained between 325 and 355 GHz. All these results are obtained with room-temperature optics and a 4 GHz IF chain having a 500 MHz bandwidth and a noise temperature of 14 K.

Alterations in gap junction connexin43/connexin45 ratio mediate a transition from quiescence to excitation in a mathematical model of the myometrium

PubMed Central

Sheldon, Rachel E.; Mashayamombe, Chipo; Shi, Shao-Qing; Garfield, Robert E.; Shmygol, Anatoly; Blanks, Andrew M.; van den Berg, Hugo A.

2014-01-01

The smooth muscle cells of the uterus contract in unison during delivery. These cells achieve coordinated activity via electrical connections called gap junctions which consist of aggregated connexin proteins such as connexin43 and connexin45. The density of gap junctions governs the excitability of the myometrium (among other factors). An increase in gap junction density occurs immediately prior to parturition. We extend a mathematical model of the myometrium by incorporating the voltage-dependence of gap junctions that has been demonstrated in the experimental literature. Two functional subtypes exist, corresponding to systems with predominantly connexin43 and predominantly connexin45, respectively. Our simulation results indicate that the gap junction protein connexin45 acts as a negative modulator of uterine excitability, and hence, activity. A network with a higher proportion of connexin45 relative to connexin43 is unable to excite every cell. Connexin45 has much more rapid gating kinetics than connexin43 which we show limits the maximum duration of a local burst of activity. We propose that this effect regulates the degree of synchronous excitation attained during a contraction. Our results support the hypothesis that as labour approaches, connexin45 is downregulated to allow action potentials to spread more readily through the myometrium. PMID:25401181

Material Science for High-Efficiency Photovoltaics: From Advanced Optical Coatings to Cell Design for High-Temperature Applications

NASA Astrophysics Data System (ADS)

Perl, Emmett Edward

Solar cells based on III-V compound semiconductors are ideally suited to convert solar energy into electricity. The highest efficiency single-junction solar cells are made of gallium arsenide, and have attained an efficiency of 28.8%. Multiple III-V materials can be combined to construct multijunction solar cells, which have reached record efficiencies greater than 45% under concentration. III-V solar cells are also well suited to operate efficiently at elevated temperatures, due in large part to their high material quality. These properties make III-V solar cells an excellent choice for use in concentrator systems. Concentrator photovoltaic systems have attained module efficiencies that exceed 40%, and have the potential to reach the lowest levelized cost of electricity in sunny places like the desert southwest. Hybrid photovoltaic-thermal solar energy systems can utilize high-temperature III-V solar cells to simultaneously achieve dispatchability and a high sunlight-to-electricity efficiency. This dissertation explores material science to advance the state of III-V multijunction solar cells for use in concentrator photovoltaic and hybrid photovoltaic-thermal solar energy systems. The first half of this dissertation describes work on advanced optical designs to improve the efficiency of multijunction solar cells. As multijunction solar cells move to configurations with four or more subcells, they utilize a larger portion of the solar spectrum. Broadband antireflection coatings are essential to realizing efficiency gains for these state-of-the-art cells. A hybrid design consisting of antireflective nanostructures placed on top of multilayer interference-based optical coatings is developed. Antireflection coatings that utilize this hybrid approach yield unparalleled performance, minimizing reflection losses to just 0.2% on sapphire and 0.6% on gallium nitride for 300-1800nm light. Dichroic mirrors are developed for bonded 5-junction solar cells that utilize InGaN as a top junction. These designs maximize reflection of high-energy light for an InGaN top junction while minimizing reflection of low-energy light that would be absorbed by the lower four junctions. Increasing the reflectivity of high-energy photons enables a second pass of light through the InGaN cell, leading to increased absorption and a higher photocurrent. These optical designs enhanced the efficiency of a 2.65eV InGaN solar cell to a value of 3.3% under the AM0 spectrum, the highest reported efficiency for a standalone InGaN solar cell. The second half of the dissertation describes the development of III-V solar cells for high-temperature applications. As the operating temperature of a solar cell is increased, the ideal bandgap of the top junction increases. AlGaInP solar cells with bandgaps ranging from 1.9eV to 2.2eV are developed. A 2.03eV AlGaInP solar cell is demonstrated with a bandgap-voltage offset of 440mV, the lowest of any AlGaInP solar cell reported to date. Single-junction AlGaInP, GaInP, and GaAs solar cells designed for high-temperature operation are characterized up to a temperature of 400°C. The cell properties are compared to an analytical drift-diffusion model, and we find that a fundamental increase in the intrinsic carrier concentration, ni, dominates the temperature dependence of the dark currents, open-circuit voltage, and cell efficiency. These findings provide a valuable guide to the design of any system that requires high-temperature solar cell operation.

Tunneling conductance in superconductor-hybrid double quantum dots Josephson junction

NASA Astrophysics Data System (ADS)

Chamoli, Tanuj; Ajay

2018-05-01

The present work deals with the theoretical model study to analyse the tunneling conductance across a superconductor hybrid double quantum dots tunnel junction (S-DQD-S). Recently, there are many experimental works where the Josephson current across such nanoscopic junction is found to be dependent on nature of the superconducting electrodes, coupling of the hybrid double quantum dot's electronic states with the electronic states of the superconductors and nature of electronic structure of the coupled dots. For this, we have attempted a theoretical model containing contributions of BCS superconducting leads, magnetic coupled quantum dot states and coupling of superconducting leads with QDs. In order to include magnetic coupled QDs the contributions of competitive Kondo and Ruderman-Kittel- Kasuya-Yosida (RKKY) interaction terms are also introduced through many body effects in the model Hamiltonian at low temperatures (where Kondo temperature TK < superconducting transition temperature TC). Employing non-equilibrium Green's function approach within mean field approximation, we have obtained expressions for density of states (DOS) and analysed the same using numerical computation to underline the nature of DOS close to Fermi level in S-DQD-S junctions. On the basis of numerical computation, it is pointed out that indirect exchange interaction between impurities (QD) i.e. RKKY interaction suppresses the screening of magnetic QD due to Cooper pair electrons i.e. Kondo effect in the form of reduction in the magnitude of sharp DOS peak close to Fermi level which is in qualitative agreement with the experimental observations in such tunnel junctions. Tunneling conductance is proportional to DOS, hence we can analyse it's behaviour with the help of DOS.

Kinetics of the head-neck complex in low-speed rear impact.

PubMed

Stemper, Brian D; Yoganandan, Naryan; Pintar, Frank A

2003-01-01

A comprehensive characterization of the biomechanics of the cervical spine in rear impact will lead to an understanding of the mechanisms of whiplash injury. Cervical kinematics have been experimentally described using human volunteers, full-body cadaver specimens, and isolated and intact head-neck specimens. However, forces and moments at the cervico-thoracic junction have not been clearly delineated. An experimental investigation was performed using ten intact head-neck complexes to delineate the loading at the base of the cervical spine and angular acceleration of the head in whiplash. A pendulum-minisled apparatus was used to simulate whiplash acceleration of the thorax at four impact severities. Lower neck loads were measured using a six-axis load cell attached between the minisled and head-neck specimens, and head angular motion was measured with an angular rate sensor attached to the lateral side of the head. Shear and axial force, extension moment, and head angular acceleration increased with impact severity. Shear force was significantly larger than axial force (p < 0.0001). Shear force reached its maximum value at 46 msec. Maximum extension moment occurred between 7 and 22 msec after maximum shear force. Maximum angular acceleration of the head occurred 2 to 18 msec later. Maximum axial force occurred last (106 msec). All four kinetic components reached maximum values during cervical S-curvature, with maximum shear force and extension moment occurring before the attainment of maximum S-curvature. Results of the present investigation indicate that shear force and extension moment at the cervico-thoracic junction drive the non-physiologic cervical S-curvature responsible for whiplash injury and underscore the importance of understanding cervical kinematics and the underlying kinetics.

Interplay between Mechanics, Electronics, and Energetics in Atomic-Scale Junctions

NASA Astrophysics Data System (ADS)

Aradhya, Sriharsha V.

The physical properties of materials at the nanoscale are controlled to a large extent by their interfaces. While much knowledge has been acquired about the properties of material in the bulk, there are many new and interesting phenomena at the interfaces that remain to be better understood. This is especially true at the scale of their constituent building blocks - atoms and molecules. Studying materials at this intricate level is a necessity at this point in time because electronic devices are rapidly approaching the limits of what was once thought possible, both in terms of their miniaturization as well as our ability to design their behavior. In this thesis I present our explorations of the interplay between mechanical properties, electronic transport and binding energetics of single atomic contacts and single-molecule junctions. Experimentally, we use a customized conducting atomic force microscope (AFM) that simultaneously measures the current and force across atomic-scale junctions. We use this instrument to study single atomic contacts of gold and silver and single-molecule junctions formed in the gap between two gold metallic point contacts, with molecules with a variety of backbones and chemical linker groups. Combined with density functional theory based simulations and analytical modeling, these experiments provide insight into the correlations between mechanics and electronic structure at the atomic level. In carrying out these experimental studies, we repeatedly form and pull apart nanoscale junctions between a metallized AFM cantilever tip and a metal-coated substrate. The force and conductance of the contact are simultaneously measured as each junction evolves through a series of atomic-scale rearrangements and bond rupture events, frequently resulting in single atomic contacts before rupturing completely. The AFM is particularly optimized to achieve high force resolution with stiff probes that are necessary to create and measure forces across atomic-size junctions that are otherwise difficult to fabricate using conventional lithographic techniques. In addition to the instrumentation, we have developed new algorithmic routines to perform statistical analyses of force data, with varying degrees of reliance on the conductance signatures. The key results presented in this thesis include our measurements with gold metallic contacts, through which we are able to rigorously characterize the stiffness and maximum forces sustained by gold single atomic contacts and many different gold-molecule-gold single-molecule junctions. In our experiments with silver metallic contacts we use statistical correlations in conductance to distinguish between pristine and oxygen-contaminated silver single atomic contacts. This allows us to separately obtain mechanical information for each of these structural motifs. The independently measured force data also provides new insights about atomic-scale junctions that are not possible to obtain through conductance measurements alone. Using a systematically designed set of molecules, we are able to demonstrate that quantum interference is not quenched in single-molecule junctions even at room temperature and ambient conditions. We have also been successful in conducting one of the first quantitative measurements of van der Waals forces at the metal-molecule interface at the single-molecule level. Finally, towards the end of this thesis, we present a general analytical framework to quantitatively reconstruct the binding energy curves of atomic-scale junctions directly from experiments, thereby unifying all of our mechanical measurements. I conclude with a summary of the work presented in this thesis, and an outlook for potential future studies that could be guided by this work.

Investigation of the adhesive bonding technology for the insulator structure of EAST neutral beam injector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wei, Jiang-Long, E-mail: jlwei@ipp.ac.cn; Li, Jun; Hu, Chun-Dong

A key issue on the development of EAST ion source was the junction design of insulator structure, which consists of three insulators and four supporting flanges of electrode grid. Because the ion source is installed on the vertical plane, the insulator structure has to withstand large bending and shear stress due to the gravity of whole ion source. Through a mechanical analysis, it was calculated that the maximum bending normal stress was 0.34 MPa and shear stress was 0.23 MPa on the insulator structure. Due to the advantages of simplicity and high strength, the adhesive bonding technology was applied tomore » the junction of insulator structure. A tensile testing campaign of different junction designs between insulator and supporting flange was performed, and a junction design of stainless steel and fiber enhanced epoxy resin with epoxy adhesive was determined. The insulator structure based on the determined design can satisfy both the requirements of high-voltage holding and mechanical strength.« less

Coherent quantum transport in hybrid Nb-InGaAs-Nb Josephson junctions

NASA Astrophysics Data System (ADS)

Delfanazari, Kaveh; Puddy, R.; Ma, P.; Cao, M.; Yi, T.; Gul, Y.; Farrer, I.; Ritchie, D.; Joyce, H.; Kelly, M.; Smith, C.

Because of the recently reported detection of Majorana fermions states at the superconductor-semiconductor (S-Sm) interface in InAs nanowire devices, the study of hybrid structures has received renewed interest. In this paper we present experimental results on proximity induced superconductivity in a high-mobility two-dimensional electron gas in InGaAs heterostructures. Eight symmetric S-Sm-S Josephson junctions were fabricated on a single InGaAs chip and each junction was measured individually using a lock-in measurement technique. The superconducting electrodes were made of Niobium (Nb). The measurements were carried out in a dilution fridge with a base temperature of 40 mK, and the quantum transport of junctions were measured below 800 mK. Owing to Andreev reflections at the S-Sm interfaces, the differential resistance (dV/dI) versus V curve shows the well-known subharmonic energy gap structure (SGS) at V = 2ΔNb/ne. The SGS features suppressed significantly with increasing temperature and magnetic field, leading to a shift of the SGSs toward zero bias. Our result paves the way for development of highly transparent hybrid S-Sm-S junctions and coherent circuits for quantum devices capable of performing quantum logic and processing functions.

Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Hugh; Todorov, Stan; Colombeau, Benjamin

2012-11-06

We report on junction advantages of cryogenic ion implantation with medium current implanters. We propose a methodical approach on maximizing cryogenic effects on junction characteristics near the amorphization threshold doses that are typically used for halo implants for sub-30 nm technologies. BF{sub 2}{sup +} implant at a dose of 8 Multiplication-Sign 10{sup 13}cm{sup -2} does not amorphize silicon at room temperature. When implanted at -100 Degree-Sign C, it forms a 30 - 35 nm thick amorphous layer. The cryogenic BF{sub 2}{sup +} implant significantly reduces the depth of the boron distribution, both as-implanted and after anneals, which improves short channelmore » rolloff characteristics. It also creates a shallower n{sup +}-p junction by steepening profiles of arsenic that is subsequently implanted in the surface region. We demonstrate effects of implant sequences, germanium preamorphization, indium and carbon co-implants for extension/halo process integration. When applied to sequences such as Ge+As+C+In+BF{sub 2}{sup +}, the cryogenic implants at -100 Degree-Sign C enable removal of Ge preamorphization, and form more active n{sup +}-p junctions and steeper B and In halo profiles than sequences at room temperature.« less

The confining baryonic Y-strings on the lattice

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bakry, Ahmed S.; Chen, Xurong; Zhang, Peng-Ming

2016-01-22

In a string picture, the nucleon is conjectured as consisting of a Y-shaped gluonic string ended by constituent quarks. In this proceeding, we summarize our results on revealing the signature of the confining Y-bosonic string in the gluonic profile due to a system of three static quarks on the lattice at finite temperature. The analysis of the action density unveils a background of a filled-Δ distribution. However, we found that these Δ-shaped profiles are comprised of three Y-shaped Gaussian-like flux tubes. The length of the revealed Y-string-like distribution is maximum near the deconfinement point and approaches the geometrical minimal nearmore » the end of the QCD plateau. The action density width profile returns good fits to a baryonic string model for the junction fluctuations at large quark source separation.« less

Measuring Water Potential (Activity) from Free Water to Oven Dryness 1

PubMed Central

Wiebe, Herman H.

1981-01-01

Water activities (potentials) in plant materials were measured over the range from free water to oven dryness with a Spanner thermocouple psychrometer. In a two-step procedure, water was first condensed on the thermocouple junction for several minutes. The sample was then inserted under the wet thermocouple and the maximum psychrometric cooling was measured in about 10 seconds. Calibration was with saturated salt slurries of known water activities. Psychrometric cooling was a nearly linear function of the water activity and of the negative log of the water potential. The psychrometric cooling to water activity relationship agreed with wetbulb temperature depression to relative humidity relationships given in tables. Water activities of wheat grains and leaves decreased sharply in a curvilinear fashion as their water contents decreased. Some problems of the procedure are discussed. Images PMID:16662081

Low Intensity Low Temperature (LILT) Measurements and Coefficients on New Photovoltaic Structures

NASA Technical Reports Server (NTRS)

Scheiman, David A.; Jenkins, Phillip P.; Brinker, David J.; Appelbaum, Joseph

1995-01-01

Past NASA missions to Mars, Jupiter and the outer planets were powered by radioisotope thermal generators (RTGs). Although these devices proved to be reliable, their high cost and highly toxic radioactive heat source has made them far less desirable for future planetary missions. This has resulted in a renewed search for alternate energy sources, some of them being photovoltaics (PV) and thermophotovoltaics (TPV). Both of these alternate energy sources convert light/thermal energy directly into electricity. In order to create a viable PV data base for planetary mission planners and cell designers, we have compiled low intensity low temperature (LILT) I-V data on single junction and multi-junction high efficiency solar cells. The cells tested here represent the latest photovoltaic technology. Using this LILT data to calculate Short Circuit Current (I(sub sc)), Open Circuit Voltage (V(sub os)), and Fill Factor (FF) as a function of temperature and intensity, an accurate prediction of cell performance under the AM0 spectrum can be determined. When combined with QUantum efficiency at Low Temperature (QULT) data, one can further enhance the data by adding spectral variations to the measurements. This paper presents an overview of LILT measurements and is only intended to be used as a guideline for material selection and performance predictions. As single junction and multi-junction cell technologies emerge, new test data must be collected. Cell materials included are Si, GaAs/Ge, GaInP/GaAs/GaAs, InP, InGaAs/InP, InP/InGaAs/InP, and GaInP. Temperatures range down to as low as -180 C and intensities range from 1 sun down to 0.02 suns. The coefficients presented in this paper represent experimental results and are intended to provide the user with approximate numbers.

Calculating electronic tunnel currents in networks of disordered irregularly shaped nanoparticles by mapping networks to arrays of parallel nonlinear resistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aghili Yajadda, Mir Massoud

2014-10-21

We have shown both theoretically and experimentally that tunnel currents in networks of disordered irregularly shaped nanoparticles (NPs) can be calculated by considering the networks as arrays of parallel nonlinear resistors. Each resistor is described by a one-dimensional or a two-dimensional array of equal size nanoparticles that the tunnel junction gaps between nanoparticles in each resistor is assumed to be equal. The number of tunnel junctions between two contact electrodes and the tunnel junction gaps between nanoparticles are found to be functions of Coulomb blockade energies. In addition, the tunnel barriers between nanoparticles were considered to be tilted at highmore » voltages. Furthermore, the role of thermal expansion coefficient of the tunnel junction gaps on the tunnel current is taken into account. The model calculations fit very well to the experimental data of a network of disordered gold nanoparticles, a forest of multi-wall carbon nanotubes, and a network of few-layer graphene nanoplates over a wide temperature range (5-300 K) at low and high DC bias voltages (0.001 mV–50 V). Our investigations indicate, although electron cotunneling in networks of disordered irregularly shaped NPs may occur, non-Arrhenius behavior at low temperatures cannot be described by the cotunneling model due to size distribution in the networks and irregular shape of nanoparticles. Non-Arrhenius behavior of the samples at zero bias voltage limit was attributed to the disorder in the samples. Unlike the electron cotunneling model, we found that the crossover from Arrhenius to non-Arrhenius behavior occurs at two temperatures, one at a high temperature and the other at a low temperature.« less

Effect of dissolved hydrogen on Schottky barrier height of Fe-Cr alloy heterojunction

NASA Astrophysics Data System (ADS)

Berahim, A. N.; Zaharudin, M. Z.; Ani, M. H.; Arifin, S. K.

2018-01-01

The presence of water vapour at high temperature oxidation has certain effects on ferritic alloy in comparison to dry environment. It is hypothesized that at high temperature; water vapour provides hydrogen, which will dissolve into ferritic alloy substrate and altering their electronic state at the metal-oxide interface. This work aimed to clarify the change in electronic state of metal-oxide heterojunction with the presence of hydrogen/water vapour. In this study, the Schottky Barrier (SB) was created by sputtering Cr2O3 onto prepared samples by using RF Magnetron sputtering machine. The existence of Fe/Cr2O3 junction was characterized by using XRD. The surfaces were observed by using Optical Microscope (OM) and Scanning Electron Microscope (SEM). The samples were then exposed in dry and humid condition at temperature of 473 K and 1073 K. In dry condition, 100% Ar is flown inside the furnace, while in wet condition mixture of 95% Ar and 5% H was used. I-V measurement of the junction was done to determine the Schottky Barrier Height(SBH) of the samples in the corresponding ambient. The results show that in Fe/Cr2O3 junction, with presence of hydrogen at temperature 473 K; the SBH was reduced by the scale factor of 1.054 and at 1073 K in wet ambient by factor of 1.068. Meanwhile, in Fe-Cr/Cr2O3 junction with presence of hydrogen, the value of SBH was increased by scale factor of 1.068 at temperature 473 K while at 1073 K, the SBH also increased by factor of 1.009.

Low-noise 115-GHz receiver using superconducting tunnel junctions

NASA Technical Reports Server (NTRS)

Pan, S.-K.; Feldman, M. J.; Kerr, A. R.; Timble, P.

1983-01-01

A 110-118-GHz receiver based on a superconducting quasiparticle tunnel junction mixer is described. The single-sideband noise temperature is as low as 68 + or - 3 K. This is nearly twice the sensitivity of any other receiver at this frequency. The receiver was designed using a low-frequency scale model in conjunction with the quantum mixer theory. A scaled version of the receiver for operation at 46 GHz has a single-sideband noise temperature of 55 K. The factors leading to the success of this design are discussed.

High temperature annealing of minority carrier traps in irradiated MOCVD n(+)p InP solar cell junctions

NASA Technical Reports Server (NTRS)

Messenger, S. R.; Walters, R. J.; Summers, G. P.

1993-01-01

Deep level transient spectroscopy was used to monitor thermal annealing of trapping centers in electron irradiated n(+)p InP junctions grown by metalorganic chemical vapor deposition, at temperatures ranging from 500 up to 650K. Special emphasis is given to the behavior of the minority carrier (electron) traps EA (0.24 eV), EC (0.12 eV), and ED (0.31 eV) which have received considerably less attention than the majority carrier (hole) traps H3, H4, and H5, although this work does extend the annealing behavior of the hole traps to higher temperatures than previously reported. It is found that H5 begins to anneal above 500K and is completely removed by 630K. The electron traps begin to anneal above 540K and are reduced to about half intensity by 630K. Although they each have slightly different annealing temperatures, EA, EC, and ED are all removed by 650K. A new hole trap called H3'(0.33 eV) grows as the other traps anneal and is the only trap remaining at 650K. This annealing behavior is much different than that reported for diffused junctions.

Aging characteristics of blue InGaN micro-light emitting diodes at an extremely high current density of 3.5 kA cm-2

NASA Astrophysics Data System (ADS)

Tian, Pengfei; Althumali, Ahmad; Gu, Erdan; Watson, Ian M.; Dawson, Martin D.; Liu, Ran

2016-04-01

The aging characteristics of blue InGaN micro-light emitting diodes (micro-LEDs) with different sizes have been studied at an extremely high current density 3.5 kA cm-2 for emerging micro-LED applications including visible light communication (VLC), micro-LED pumped organic lasers and optogenetics. The light output power of micro-LEDs first increases and then decreases due to the competition of Mg activation in p-GaN layer and defect generation in the active region. The smaller micro-LEDs show less light output power degradation compared with larger micro-LEDs, which is attributed to the lower junction temperature of smaller micro-LEDs. It is found that the high current density without additional junction temperature cannot induce significant micro-LED degradation at room temperature but the combination of the high current density and high junction temperature leads to strong degradation. Furthermore, the cluster LEDs, composed of a micro-LED array, have been developed with both high light output power and less light output degradation for micro-LED applications in solid state lighting and VLC.

Efficient p-n junction-based thermoelectric generator that can operate at extreme temperature conditions

NASA Astrophysics Data System (ADS)

Chavez, Ruben; Angst, Sebastian; Hall, Joseph; Maculewicz, Franziska; Stoetzel, Julia; Wiggers, Hartmut; Thanh Hung, Le; Van Nong, Ngo; Pryds, Nini; Span, Gerhard; Wolf, Dietrich E.; Schmechel, Roland; Schierning, Gabi

2018-01-01

In many industrial processes, a large proportion of energy is lost in the form of heat. Thermoelectric generators can convert this waste heat into electricity by means of the Seebeck effect. However, the use of thermoelectric generators in practical applications on an industrial scale is limited in part because electrical, thermal, and mechanical bonding contacts between the semiconductor materials and the metal electrodes in current designs are not capable of withstanding thermal-mechanical stress and alloying of the metal-semiconductor interface when exposed to the high temperatures occurring in many real-world applications. Here we demonstrate a concept for thermoelectric generators that can address this issue by replacing the metallization and electrode bonding on the hot side of the device by a p-n junction between the two semiconductor materials, making the device robust against temperature induced failure. In our proof-of-principle demonstration, a p-n junction device made from nanocrystalline silicon is at least comparable in its efficiency and power output to conventional devices of the same material and fabrication process, but with the advantage of sustaining high hot side temperatures and oxidative atmosphere.

Strong electroluminescence from direct band and defects in Ge n+/p shallow junctions at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Guangyang; Li, Cheng, E-mail: lich@xmu.edu.cn; Chen, Chaowen

2016-05-09

Strong room temperature electroluminescence with two emission peaks at around 0.786 eV and 0.747 eV from Ge n+/p shallow junctions was reported. The peak at around 0.786 eV comes from direct band luminescence (DBL) in n + Ge regions, while the peak fixing at 0.747 eV is resulted from defects induced by ion implantation. Heavy n-type doping in Ge renders realization of strong defect-related luminescence (DRL) feasible. The peak intensity ratio of DRL/DBL decreases with increase of injection current since more electrons are filled in Γ valley. Above all, the Ge n+/p shallow junction is fully compatible with the source and drain in Gemore » metal-oxide-semiconductor field effect transistors.« less

Low-noise submillimeter-wave NbTiN superconducting tunnel junction mixers

NASA Astrophysics Data System (ADS)

Kawamura, Jonathan; Chen, Jian; Miller, David; Kooi, Jacob; Zmuidzinas, Jonas; Bumble, Bruce; LeDuc, Henry G.; Stern, Jeff A.

1999-12-01

We have developed a low-noise 850 GHz superconductor-insulator-superconductor quasiparticle mixer with NbTiN thin-film microstrip tuning circuits and hybrid Nb/AlN/NbTiN tunnel junctions. The mixer uses a quasioptical configuration with a planar twin-slot antenna feeding a two-junction tuning circuit. At 798 GHz, we measured an uncorrected double-sideband receiver noise temperature of TRX=260 K at 4.2 K bath temperature. This mixer outperforms current Nb SIS mixers by a factor of nearly 2 near 800 GHz. The high-gap frequency and low loss at 800 GHz make NbTiN an attractive material with which to fabricate tuning circuits for SIS mixers. NbTiN mixers can potentially operate up to the gap frequency, 2Δ/h˜1.2 THz.

Magnetic Tunnel Junctions Based On Alkanethiol Self Assembled Monolayers

NASA Astrophysics Data System (ADS)

Delprat, Sophie; Quinard, Benoit; Galbiati, Marta; Mattera, Michele; Manas-Valero, Samuel; Forment-Aliaga, Alicia; Tatay, Sergio; Deranlot, Cyrile; Collin, Sophie; Bouzehouane, Karim; Mattana, Richard; Seneor, Pierre; Petroff, Frederic

Molecular spintronics has opened novel and exciting functionalities for spintronics devices. Among them, it was shown that spin dependent hybridization at metal/molecule interfaces could lead to radical tailoring of spintronics properties. In this direction Self-Assembled Monolayers (SAMs) appear to be a very promising candidate with their impressive molecular scale crafting properties. Despite all the promising possibilities, up to now less than a handful of experiments on SAMs as spin-dependent tunnel barriers have been reported at low temperatures, but already showing potential. Towards room temperature spin signal, we studied magnetic tunnel junctions based on alkanethiol and conventional ferromagnets such as Co,NiFe for which we developed a process to recover the ferromagnet from oxidiation. We will present NiFe/SAMs/Co molecular magnetic tunnel junctions with magnetoresistance effects up to 10% observed at 300K.

Low-Noise Submillimeter-Wave NbTiN Superconducting Tunnel Junction Mixers

NASA Technical Reports Server (NTRS)

Kawamura, J.; Chen, J.; Miller, D.; Kooi, J.; Zmuidzinas, J.; Bumble, B.; LeDuc, H. G.; Stern, J. A.

1999-01-01

We have developed a low-noise 850 GHz superconductor-insulator-superconductor (SIS) quasi-particle mixer with NbTiN thin-film microstrip tuning circuits and hybrid Nb/AlN/NbTiN tunnel junctions. The mixer uses a quasioptical configuration with a planar twin-slot antenna feeding a two-junction tuning circuit. At 798 GHz, we measured an uncorrected double-sideband receiver noise temperature of T(sub RX) = 260 K at 4.2 K bath temperature. This mixer outperforms current Nb SIS mixers by a factor of nearly 2 near 800 GHz. The high gap frequency and low loss at 800 GHz make NbTiN an attractive material with which to fabricate tuning circuits for SIS mixers. NbTiN mixers can potentially operate up to the gap frequency, 2(delta)/h is approximately 1.2THz.

Josephson junction devices: Model quantum mechanical systems and medical applications

NASA Astrophysics Data System (ADS)

Chen, Josephine

In this dissertation, three experiments using Josephson junction devices are described. In Part I, the effect of dissipation on tunneling between charge states in a superconducting single-electron transistor (sSET) was studied. The sSET was fabricated on top of a semi-conductor heterostructure with a two-dimensional electron gas (2DEG) imbedded beneath the surface. The 2DEG acted as a dissipative ground plane. The sheet resistance of the 2DEG could be varied in situ by applying a large voltage to a gate on the back of the substrate. The zero-bias conductance of the sSET was observed to increase with increasing temperature and 2DEG resistance. Some qualitative but not quantitative agreement was found with theoretical calculations of the functional dependence of the conductance on temperature and 2DEG resistance. Part II describes a series of experiments performed on magnesium diboride point-contact junctions. The pressure between the MgB2 tip and base pieces could be adjusted to form junctions with different characteristics. With light pressure applied between the two pieces, quasiparticle tunneling in superconductor-insulator-superconductor junctions was measured. From these data, a superconducting gap of approximately 2 meV and a critical temperature of 29 K were estimated. Increasing the pressure between the MgB2 pieces formed junctions with superconductor-normal metal-superconductor characteristics. We used these junctions to form MgB2 superconducting quantum interference devices (SQUIDS). Noise levels as low as 35 fT/Hz1/2 and 4 muphi 0/Hz1/2 at 1 kHz were measured. In Part III, we used a SQUID-based instrument to acquire magnetocardiograms (MCG), the magnetic field signal measured from the human heart. We measured 51 healthy volunteers and 11 cardiac patients both at rest and after treadmill exercise. We found age and sex related differences in the MCG of the healthy volunteers that suggest that these factors should be considered when evaluating the MCG for disease. We also defined a spatio-temporal MCG parameter, the repolarization stabilization interval, which successfully discriminated our patients from our healthy controls.

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

PubMed Central

Ohno, Takeo; Oyama, Yutaka

2012-01-01

In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor. PMID:27877466

Temperature dependence of spin-torque driven ferromagnetic resonance in MgO-based magnetic tunnel junction with a perpendicularly free layer

NASA Astrophysics Data System (ADS)

Wang, Xiao; Feng, Jiafeng; Guo, Peng; Wei, H. X.; Han, X. F.; Fang, B.; Zeng, Z. M.

2017-12-01

We report the temperature dependence of the spin-torque (ST) driven ferromagnetic resonance in MgO-based magnetic tunnel junction (MTJ) nanopillars with a perpendicularly free layer and an in-plane reference layer. From the evolution of the resonance frequency with magnetic field, we clearly identify the free-layer resonance mode and reference-layer mode. For the reference layer, we demonstrate a monotonic increase in resonance frequency and the effective damping with decreasing temperature, which suggests the saturated magnetization of the reference layer is dominant. However, for the free layer, the frequency and damping exhibit almost no change with temperature, indicating that the perpendicular magnetic anisotropy plays an important role in magnetization dynamics of the free layer.

Defect Engineering and Phase Junction Architecture of Wide-Bandgap ZnS for Conflicting Visible Light Activity in Photocatalytic H₂ Evolution.

PubMed

Fang, Zhibin; Weng, Sunxian; Ye, Xinxin; Feng, Wenhui; Zheng, Zuyang; Lu, Meiliang; Lin, Sen; Fu, Xianzhi; Liu, Ping

2015-07-01

ZnS is among the superior photocatalysts for H2 evolution, whereas the wide bandgap restricts its performance to only UV region. Herein, defect engineering and phase junction architecture from a controllable phase transformation enable ZnS to achieve the conflicting visible-light-driven activities for H2 evolution. On the basis of first-principle density functional theory calculations, electron spin resonance and photoluminescence results, etc., it is initially proposed that the regulated sulfur vacancies in wurtzite phase of ZnS play the key role of photosensitization units for charge generation in visible light and active sites for effective electron utilization. The symbiotic sphalerite-wurtzite phase junctions that dominate the charge-transfer kinetics for photoexciton separation are the indispensable configuration in the present systems. Neither ZnS samples without phase junction nor those without enough sulfur vacancies conduct visible-light photocatalytic H2 evolution, while the one with optimized phase junctions and maximum sulfur vacancies shows considerable photocatalytic activity. This work will not only contribute to the realization of visible light photocatalysis for wide-bandgap semiconductors but also broaden the vision on the design of highly efficient transition metal sulfide photocatalysts.

A decay of gap junctions associated with ganglion cell differentiation during retinal regeneration of the adult newt.

PubMed

Oi, Hanako; Chiba, Chikafumi; Saito, Takehiko

2003-12-01

Changes in the gap junctional coupling and maturation of voltage-activated Na(+) currents during regeneration of newt retinas were examined by whole-cell patch-clamping in slice preparations. Progenitor cells in regenerating retinas did not exhibit Na(+) currents but showed prominent electrical and tracer couplings. Cells identified by LY-fills were typically slender. Na(+) currents were detected in premature ganglion cells with round somata in the 'intermediate-II' regenerating retina. No electrical and tracer couplings were observed between these cells. Mature ganglion cells did not exhibit electrical coupling, but showed tracer coupling. On average, the maximum Na(+) current amplitude recorded from premature ganglion cells was roughly 2.5-fold smaller than that of mature ganglion cells. In addition, the activation threshold of the Na(+) current was nearly 11 mV more positive than that of mature cells. We provide morphological and physiological evidence showing that loss of gap junctions between progenitor cells is associated with ganglion cell differentiation during retinal regeneration and that new gap junctions are recreated between mature ganglion cells. Also we provide evidence suggesting that the loss of gap junctions correlates with the appearance of voltage-activated Na(+) currents in ganglion cells.

Transient thermal and stress analysis of maxillary second premolar tooth using an exact three-dimensional model.

PubMed

Hashemipour, Maryam Alsadat; Mohammadpour, Ali; Nassab, Seiied Abdolreza Gandjalikhan

2010-01-01

In this paper, the temperature and stress distributions in an exact 3D-model of a restored maxillary second premolar tooth are obtained with finite element approach. The carious teeth need to restore with appropriate restorative materials. There are too many restorative materials which can be used instead of tooth structures; since tooth structures are being replaced, the restorative materials should be similar to original structure as could as possible. In the present study, a Mesial Occlusal Distal (MOD) type of restoration is chosen and applied to a sound tooth model. Four cases of restoration are investigated: two cases in which base are used under restorative materials and two cases in which base is deleted. The restorative materials are amalgam and composite and glass-inomer is used as a base material. Modeling is done in the solid works ambient by means of an exact measuring of a typical human tooth dimensions. Tooth behavior under thermal load due to consuming hot liquids is analyzed by means of a three dimensional finite element method using ANSYS software. The highest values of tensile and compressive stresses are compared with tensile and compressive strength of the tooth and restorative materials and the value of shear stress on the tooth and restoration junctions is compared with the bond strength. Also, sound tooth under the same thermal load is analyzed and the results are compared with those obtained for restored models. Temperature and stress distributions in the tooth are calculated for each case, with a special consideration in the vicinity of pulp and restoration region. Numerical results show that in two cases with amalgam, using the base material (Glass-ionomer) under the restorative material causes to decrease the maximum temperature in the restorative teeth. In the stress analysis, it is seen that the principal stress has its maximum values in composite restorations. The maximum temperatures are found in the restoration case of amalgam without base. Besides, it is found that restoration has not any influence on the stress values at DEJ, such that for all cases, these values are close to sound tooth results.

The Reduction of TED in Ion Implanted Silicon

NASA Astrophysics Data System (ADS)

Jain, Amitabh

2008-11-01

The leading challenge in the continued scaling of junctions made by ion implantation and annealing is the control of the undesired transient enhanced diffusion (TED) effect. Spike annealing has been used as a means to reduce this effect and has proven successful in previous nodes. The peak temperature in this process is typically 1050 °C and the time spent within 50 °C of the peak is of the order of 1.5 seconds. As technology advances along the future scaling roadmap, further reduction or elimination of the enhanced diffusion effect is necessary. We have shown that raising the peak temperature to 1175 °C or more and reduction of the anneal time at peak temperature to less than a millisecond is effective in eliminating enhanced diffusion. We show that it is possible to employ a sequence of millisecond anneal followed by spike anneal to obtain profiles that do not exhibit gradient degradation at the junction and have junction depth and sheet resistance appropriate to the needs of future technology nodes. We have implemented millisecond annealing using a carbon dioxide laser to support high-volume manufacturing of 65 nm microprocessors and system-on-chip products. We further show how the use of molecular ion implantation to produce amorphousness followed by laser annealing to produce solid phase epitaxial regrowth results in junctions that meet the shallow depth and abruptness requirements of the 32 nm node.

Low Noise 1.2 THz SIS Receiver

NASA Technical Reports Server (NTRS)

Karpov, A.; Miller, D.; Rice, F.; Zmuidzinas, J.; Stern, J. A.; Bumble, B.; LeDuc, H. G.

2001-01-01

We present the development of a low noise superconductor insulator superconductor (SIS) mixer for the 1.1 - 1.25 THz heterodyne receiver of FIRST space radiotelescope. The quasi-optical SIS mixer has two NbTiN/AlN/Nb junctions with critical current density 30 kA/sq cm. The individual junction area is close to 0.65 square micrometers. The SIS junctions are coupled to the optical input beam through a planar double slot antenna and a Si hyperhemispherical lens. The minimum DSB receiver noise temperature is 650 K, about 12 hv/k.

A High Temperature Silicon Carbide mosfet Power Module With Integrated Silicon-On-Insulator-Based Gate Drive

DOE PAGES

Wang, Zhiqiang; Shi, Xiaojie; Tolbert, Leon M.; ...

2014-04-30

Here we present a board-level integrated silicon carbide (SiC) MOSFET power module for high temperature and high power density application. Specifically, a silicon-on-insulator (SOI)-based gate driver capable of operating at 200°C ambient temperature is designed and fabricated. The sourcing and sinking current capability of the gate driver are tested under various ambient temperatures. Also, a 1200 V/100 A SiC MOSFET phase-leg power module is developed utilizing high temperature packaging technologies. The static characteristics, switching performance, and short-circuit behavior of the fabricated power module are fully evaluated at different temperatures. Moreover, a buck converter prototype composed of the SOI gate drivermore » and SiC power module is built for high temperature continuous operation. The converter is operated at different switching frequencies up to 100 kHz, with its junction temperature monitored by a thermosensitive electrical parameter and compared with thermal simulation results. The experimental results from the continuous operation demonstrate the high temperature capability of the power module at a junction temperature greater than 225°C.« less

Tuning Chemical Potential Difference across Alternately Doped Graphene p-n Junctions for High-Efficiency Photodetection.

PubMed

Lin, Li; Xu, Xiang; Yin, Jianbo; Sun, Jingyu; Tan, Zhenjun; Koh, Ai Leen; Wang, Huan; Peng, Hailin; Chen, Yulin; Liu, Zhongfan

2016-07-13

Being atomically thin, graphene-based p-n junctions hold great promise for applications in ultrasmall high-efficiency photodetectors. It is well-known that the efficiency of such photodetectors can be improved by optimizing the chemical potential difference of the graphene p-n junction. However, to date, such tuning has been limited to a few hundred millielectronvolts. To improve this critical parameter, here we report that using a temperature-controlled chemical vapor deposition process, we successfully achieved modulation-doped growth of an alternately nitrogen- and boron-doped graphene p-n junction with a tunable chemical potential difference up to 1 eV. Furthermore, such p-n junction structure can be prepared on a large scale with stable, uniform, and substitutional doping and exhibits a single-crystalline nature. This work provides a feasible method for synthesizing low-cost, large-scale, high efficiency graphene p-n junctions, thus facilitating their applications in optoelectronic and energy conversion devices.

Very high-current-density Nb/AlN/Nb tunnel junctions for low-noise submillimeter mixers

NASA Astrophysics Data System (ADS)

Kawamura, Jonathan; Miller, David; Chen, Jian; Zmuidzinas, Jonas; Bumble, Bruce; LeDuc, Henry G.; Stern, Jeff A.

2000-04-01

We have fabricated and tested submillimeter-wave superconductor-insulator-superconductor (SIS) mixers using very high-current-density Nb/AlN/Nb tunnel junctions (Jc≈30 kA cm-2). The junctions have low-resistance-area products (RNA≈5.6 Ω μm2), good subgap-to-normal resistance ratios Rsg/RN≈10, and good run-to-run reproducibility. From Fourier transform spectrometer measurements, we infer that ωRNC=1 at 270 GHz. This is a factor of 2.5 improvement over what is generally available with Nb/AlOx/Nb junctions suitable for low-noise mixers. The AlN-barrier junctions are indeed capable of low-noise operation: we measure an uncorrected double-sideband receiver noise temperature of TRX=110 K at 533 GHz for an unoptimized device. In addition to providing wider bandwidth operation at lower frequencies, the AlN-barrier junctions will considerably improve the performance of THz SIS mixers by reducing rf loss in the tuning circuits.

Thermo-electric modular structure and method of making same

DOEpatents

Freedman, N.S.; Horsting, C.W.; Lawrence, W.F.; Carrona, J.J.

1974-01-29

A method is presented for making a thermoelectric module wtth the aid of an insulating wafer having opposite metallized surfaces, a pair of similar equalizing sheets of metal, a hot-junction strap of metal, a thermoelectric element having hot- and cold-junction surfaces, and a radiator sheet of metal. The method comprises the following steps: brazing said equalizer sheets to said opposite metallized surfaces, respectively, of said insulating wafer with pure copper in a non-oxidizing ambient; brazing one surface of said hot-junction strap to one of the surfaces of said equalizing sheet with a nickel-gold alloy in a non- oxidizing ambient; and diffusion bonding said hot-junction surface of said thermoelectric element to the other surface of said hot-junction strap and said radiator sheet to said cold-junction surface of said thermoelectric element, said diffusion bonding being carried out in a non-oxidizing ambient, under compressive loading, at a temperature of about 550 deg C., and for about one-half hour. (Official Gazette)

Observation of microwave absorption and emission from incoherent electron tunneling through a normal-metal-insulator-superconductor junction.

PubMed

Masuda, Shumpei; Tan, Kuan Y; Partanen, Matti; Lake, Russell E; Govenius, Joonas; Silveri, Matti; Grabert, Hermann; Möttönen, Mikko

2018-03-02

We experimentally study nanoscale normal-metal-insulator-superconductor junctions coupled to a superconducting microwave resonator. We observe that bias-voltage-controllable single-electron tunneling through the junctions gives rise to a direct conversion between the electrostatic energy and that of microwave photons. The measured power spectral density of the microwave radiation emitted by the resonator exceeds at high bias voltages that of an equivalent single-mode radiation source at 2.5 K although the phonon and electron reservoirs are at subkelvin temperatures. Measurements of the generated power quantitatively agree with a theoretical model in a wide range of bias voltages. Thus, we have developed a microwave source which is compatible with low-temperature electronics and offers convenient in-situ electrical control of the incoherent photon emission rate with a predetermined frequency, without relying on intrinsic voltage fluctuations of heated normal-metal components or suffering from unwanted losses in room temperature cables. Importantly, our observation of negative generated power at relatively low bias voltages provides a novel type of verification of the working principles of the recently discovered quantum-circuit refrigerator.

Creep deformation and mechanisms in Haynes 230 at 800 °C and 900 °C

NASA Astrophysics Data System (ADS)

Pataky, Garrett J.; Sehitoglu, Huseyin; Maier, Hans J.

2013-11-01

Creep was studied in Haynes 230, a material candidate for the very high temperature reactor's intermediate heat exchanger, at 800 °C and 900 °C. This study focused on the differences between the behavior at the two elevated temperature, and using the microstructure, grain boundary serrations and triple junction strain concentrations were quantitatively identified. There was significant damage in the 900 °C samples and the creep was almost entirely tertiary. In contrast, the 800 °C sample exhibited secondary creep. Using an Arrhenius equation, the minimum creep rate exponents were found to be n ≈ 3 and n ≈ 5 for 900 °C and 800 °C, respectively. The creep mechanisms were identified as solute drag for n ≈ 3 and dislocation climb for n ≈ 5. Strain concentrations were identified at triple junctions and grain boundary serrations using high resolution digital image correlation overlaid on the microstructure. The grain boundary serrations restrict grain boundary sliding which may reduce the creep damage at triple junctions and extend the creep life of Haynes 230 at elevated temperatures.

Adavanced RTG and thermoelectric materials study

NASA Technical Reports Server (NTRS)

Eggers, P. E.

1971-01-01

A comprehensive, generalized two-dimensional RTG analysis computer program was developed. This program is capable of analyzing any specified RTG design under a wide range of transient as well as steady-state operating conditions. The feasibility of a new concept for the design of segmented (or single-phase) thermoelectric couples was demonstrated. A SiGe-PbTe segmented couple involving pressure contacted junctions at the intermediate- and hot-junction temperatures was successfully encapsulated in a hermetically sealed bellows enclosure. This bellows-encapsulated couple was operated between a hot- and cold-junction temperature of 1200 K and 450 K, respectively, with a measured energy conversion efficiency of 7.6 + or - .5 per cent. An experimental study of selected sublimation barrier schemes revealed that a significant reduction in the sublimation rate of p-type PbTe could be achieved by using multiple layers of SiO2 fibers. A comparison of the barrier effectiveness is given for three different barrier designs.

Supramolecular motifs in dynamic covalent PEG-hemiaminal organogels

PubMed Central

Fox, Courtney H.; ter Hurrne, Gijs M.; Wojtecki, Rudy J.; Jones, Gavin O.; Horn, Hans W.; Meijer, E. W.; Frank, Curtis W.; Hedrick, James L.; García, Jeannette M.

2015-01-01

Dynamic covalent materials are stable materials that possess reversible behaviour triggered by stimuli such as light, redox conditions or temperature; whereas supramolecular crosslinks depend on the equilibrium constant and relative concentrations of crosslinks as a function of temperature. The combination of these two reversible chemistries can allow access to materials with unique properties. Here, we show that this combination of dynamic covalent and supramolecular chemistry can be used to prepare organogels comprising distinct networks. Two materials containing hemiaminal crosslink junctions were synthesized; one material is comprised of dynamic covalent junctions and the other contains hydrogen-bonding bis-hemiaminal moieties. Under specific network synthesis conditions, these materials exhibited self-healing behaviour. This work reports on both the molecular-level detail of hemiaminal crosslink junction formation as well as the macroscopic behaviour of hemiaminal dynamic covalent network (HDCN) elastomeric organogels. These materials have potential applications as elastomeric components in printable materials, cargo carriers and adhesives. PMID:26174864

Equilibration of quantum hall edge states and its conductance fluctuations in graphene p-n junctions

NASA Astrophysics Data System (ADS)

Kumar, Chandan; Kuiri, Manabendra; Das, Anindya

2018-02-01

We report an observation of conductance fluctuations (CFs) in the bipolar regime of quantum hall (QH) plateaus in graphene (p-n-p/n-p-n) devices. The CFs in the bipolar regime are shown to decrease with increasing bias and temperature. At high temperature (above 7 K) the CFs vanishes completely and the flat quantized plateaus are recovered in the bipolar regime. The values of QH plateaus are in theoretical agreement based on full equilibration of chiral channels at the p-n junction. The amplitude of CFs for different filling factors follows a trend predicted by the random matrix theory. Although, there are mismatch in the values of CFs between the experiment and theory but at higher filling factors the experimental values become closer to the theoretical prediction. The suppression of CFs and its dependence has been understood in terms of time dependent disorders present at the p-n junctions.

High frequency measurements of shot noise suppression in atomic-scale metal contacts

NASA Astrophysics Data System (ADS)

Wheeler, Patrick J.; Evans, Kenneth; Russom, Jeffrey; King, Nicholas; Natelson, Douglas

2009-03-01

Shot noise provides a means of assessing the number and transmission coefficients of transmitting channels in atomic- and molecular-scale junctions. Previous experiments at low temperatures in metal and semiconductor point contacts have demonstrated the expected suppression of shot noise when junction conductance is near an integer multiple of the conductance quantum, G0≡2e^2/h. Using high frequency techniques, we demonstrate the high speed acquisition of such data at room temperature in mechanical break junctions. In clean Au contacts conductance histograms with clear peaks at G0, 2G0, and 3G0 are acquired within hours, and histograms of simultaneous measurements of the shot noise show clear suppression at those conductance values. We describe the dependence of the noise on bias voltage and analyze the noise vs. conductance histograms in terms of a model that averages over transmission coefficients.

Investigation of silicide-induced-dopant-activation for steep tunnel junction in tunnel field effect transistor (TFET)

NASA Astrophysics Data System (ADS)

Kim, Sihyun; Kwon, Dae Woong; Park, Euyhwan; Lee, Junil; Lee, Roongbin; Lee, Jong-Ho; Park, Byung-Gook

2018-02-01

Numerous researches for making steep tunnel junction within tunnel field-effect transistor (TFET) have been conducted. One of the ways to make an abrupt junction is source/drain silicidation, which uses the phenomenon often called silicide-induced-dopant-segregation. It is revealed that the silicide process not only helps dopants to pile up adjacent to the metal-silicon alloy, also induces the dopant activation, thereby making it possible to avoid additional high temperature process. In this report, the availability of dopant activation induced by metal silicide process was thoroughly investigated by diode measurement and device simulation. Metal-silicon (MS) diodes having p+ and n+ silicon formed on the p- substrate exhibit the characteristics of ohmic and pn diodes respectively, for both the samples with and without high temperature annealing. The device simulation for TFETs with dopant-segregated source was also conducted, which verified enhanced DC performance.

Temperature and Voltage Offsets in High- ZT Thermoelectrics

NASA Astrophysics Data System (ADS)

Levy, George S.

2018-06-01

Thermodynamic temperature can take on different meanings. Kinetic temperature is an expectation value and a function of the kinetic energy distribution. Statistical temperature is a parameter of the distribution. Kinetic temperature and statistical temperature, identical in Maxwell-Boltzmann statistics, can differ in other statistics such as those of Fermi-Dirac or Bose-Einstein when a field is present. Thermal equilibrium corresponds to zero statistical temperature gradient, not zero kinetic temperature gradient. Since heat carriers in thermoelectrics are fermions, the difference between these two temperatures may explain voltage and temperature offsets observed during meticulous Seebeck measurements in which the temperature-voltage curve does not go through the origin. In conventional semiconductors, temperature offsets produced by fermionic electrical carriers are not observable because they are shorted by heat phonons in the lattice. In high- ZT materials, however, these offsets have been detected but attributed to faulty laboratory procedures. Additional supporting evidence for spontaneous voltages and temperature gradients includes data collected in epistatic experiments and in the plasma Q-machine. Device fabrication guidelines for testing the hypothesis are suggested including using unipolar junctions stacked in a superlattice, alternating n/ n + and p/ p + junctions, selecting appropriate dimensions, doping, and loading.

Temperature and Voltage Offsets in High-ZT Thermoelectrics

NASA Astrophysics Data System (ADS)

Levy, George S.

2017-10-01

Thermodynamic temperature can take on different meanings. Kinetic temperature is an expectation value and a function of the kinetic energy distribution. Statistical temperature is a parameter of the distribution. Kinetic temperature and statistical temperature, identical in Maxwell-Boltzmann statistics, can differ in other statistics such as those of Fermi-Dirac or Bose-Einstein when a field is present. Thermal equilibrium corresponds to zero statistical temperature gradient, not zero kinetic temperature gradient. Since heat carriers in thermoelectrics are fermions, the difference between these two temperatures may explain voltage and temperature offsets observed during meticulous Seebeck measurements in which the temperature-voltage curve does not go through the origin. In conventional semiconductors, temperature offsets produced by fermionic electrical carriers are not observable because they are shorted by heat phonons in the lattice. In high-ZT materials, however, these offsets have been detected but attributed to faulty laboratory procedures. Additional supporting evidence for spontaneous voltages and temperature gradients includes data collected in epistatic experiments and in the plasma Q-machine. Device fabrication guidelines for testing the hypothesis are suggested including using unipolar junctions stacked in a superlattice, alternating n/n + and p/p + junctions, selecting appropriate dimensions, doping, and loading.

Design and optimization of the plasmonic graphene/InP thin-film solar-cell structure

NASA Astrophysics Data System (ADS)

Nematpour, Abedin; Nikoufard, Mahmoud; Mehragha, Rouholla

2018-06-01

In this paper, a graphene/InP thin-film Schottky-junction solar cell with a periodic array of plasmonic back-reflector is proposed. In this structure, a single-layer graphene sheet is deposited on the surface of the InP to form a Schottky junction. Then, the layer stack of the proposed solar-cell is optimized to have a maximum optical absorption of 〈A W〉  =  0.985 (98.5%) and short-circuit current density of J sc  =  33.01 mA cm‑2.

An investigation of the SNS Josephson junction as a three-terminal device. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Meissner, H.; Prans, G. P.

1973-01-01

A particular phenomenon of the SNS Josephson junction was investigated; i.e., control by a current entering the normal region and leaving through one of the superconducting regions. The effect of the control current on the junction was found to be dependent upon the ration of the resistances of the two halves of the N layer. A low frequency, lumped, nonlinear model was proposed to describe the electrical characteristics of the device, and a method was developed to plot the dynamic junction resistance as a function of junction current. The effective thermal noise temperature of the sample was determined. Small signal linearized analysis of the device suggests its use as an impedance transformer, although geometric limitations must be overcome. Linear approximation indicates that it is reciprocal and no power gain is possible. It is felt that, with suitable metallurgical and geometrical improvements, the device has promise to become a superconducting transistor.

Excimer laser annealing: A gold process for CZ silicon junction formation

NASA Technical Reports Server (NTRS)

Wong, David C.; Bottenberg, William R.; Byron, Stanley; Alexander, Paul

1987-01-01

A cold process using an excimer laser for junction formation in silicon has been evaluated as a way to avoid problems associated with thermal diffusion. Conventional thermal diffusion can cause bulk precipitation of SiOx and SiC or fail to completely activate the dopant, leaving a degenerate layer at the surface. Experiments were conducted to determine the feasibility of fabricating high quality p-n junctions using a pulsed excimer laser for junction formation at remelt temperature with ion-implanted surfaces. Solar-cell efficiency exceeding 16 percent was obtained using Czochralski single-crystal silicon without benefit of back surface field or surface passivation. Characterization shows that the formation of uniform, shallow junctions (approximately 0.25 micron) by excimer laser scanning preserves the minority carrier lifetime that leads to high current collection. However, the process is sensitive to initial surface conditions and handling parameters that drive the cost up.

NbN tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Villegier, J.C.; Goniche, M.; Renard, P.

1985-03-01

All-niobium nitride Josephson junctions have been prepared successfully using a new processing called SNOP: Selective Niobium (Nitride) Overlap Process. Such a process involves the ''trilayer'' deposition on the whole wafer before selective patterning of the electrodes by optically controlled Dry Reactive Ion Etching. Only two photomask levels are need to define an ''overlap'' or a ''cross-type'' junction with a good accuracy. The properties of the niobium nitride films deposited by DC-Magnetron sputtering and the surface oxide growth are analysed. The most critical point to obtain high quality and high gap value junctions resides in the early stage of the NbNmore » counterelectrode growth. Some possibilities to overcome such a handicap exist even if the fabrication needs substrate temperatures below 250/sup 0/C.« less

Current rectification in a single molecule diode: the role of electrode coupling.

PubMed

Sherif, Siya; Rubio-Bollinger, Gabino; Pinilla-Cienfuegos, Elena; Coronado, Eugenio; Cuevas, Juan Carlos; Agraït, Nicolás

2015-07-24

We demonstrate large rectification ratios (> 100) in single-molecule junctions based on a metal-oxide cluster (polyoxometalate), using a scanning tunneling microscope (STM) both at ambient conditions and at low temperature. These rectification ratios are the largest ever observed in a single-molecule junction, and in addition these junctions sustain current densities larger than 10(5) A cm(-2). By following the variation of the I-V characteristics with tip-molecule separation we demonstrate unambiguously that rectification is due to asymmetric coupling to the electrodes of a molecule with an asymmetric level structure. This mechanism can be implemented in other type of molecular junctions using both organic and inorganic molecules and provides a simple strategy for the rational design of molecular diodes.

Current rectification in a single molecule diode: the role of electrode coupling

NASA Astrophysics Data System (ADS)

Sherif, Siya; Rubio-Bollinger, Gabino; Pinilla-Cienfuegos, Elena; Coronado, Eugenio; Cuevas, Juan Carlos; Agraït, Nicolás

2015-07-01

We demonstrate large rectification ratios (\\gt 100) in single-molecule junctions based on a metal-oxide cluster (polyoxometalate), using a scanning tunneling microscope (STM) both at ambient conditions and at low temperature. These rectification ratios are the largest ever observed in a single-molecule junction, and in addition these junctions sustain current densities larger than 105 A cm-2. By following the variation of the I-V characteristics with tip-molecule separation we demonstrate unambiguously that rectification is due to asymmetric coupling to the electrodes of a molecule with an asymmetric level structure. This mechanism can be implemented in other type of molecular junctions using both organic and inorganic molecules and provides a simple strategy for the rational design of molecular diodes.

Phase and vortex correlations in superconducting Josephson-junction arrays at irrational magnetic frustration.

PubMed

Granato, Enzo

2008-07-11

Phase coherence and vortex order in a Josephson-junction array at irrational frustration are studied by extensive Monte Carlo simulations using the parallel-tempering method. A scaling analysis of the correlation length of phase variables in the full equilibrated system shows that the critical temperature vanishes with a power-law divergent correlation length and critical exponent nuph, in agreement with recent results from resistivity scaling analysis. A similar scaling analysis for vortex variables reveals a different critical exponent nuv, suggesting that there are two distinct correlation lengths associated with a decoupled zero-temperature phase transition.

TH-CD-207B-07: Noise Modeling of Single Photon Avalanche Diode (SPAD) for Photon Counting CT Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Z; Zheng, X; Deen, J

Purpose: Silicon photomultiplier (SiPM) has recently emerged as a promising photodetector for biomedical imaging applications. Due to its high multiplication gain (comparable to PMT), fast timing, low cost and compactness, it is considered a good candidate for photon counting CT. Dark noise is a limiting factor which impacts both energy resolution and detection dynamic range. Our goal is to develop a comprehensive model for noise sources for SiPM sensors. Methods: The physical parameters used in this work were based upon a test SPAD fabricated in 130nm CMOS process. The SPAD uses an n+/p-well junction, which is isolated from the p-substratemore » by a deep n-well junction. Inter-avalanche time measurement was used to record the time interval between two adjacent avalanche pulses. After collecting 1×106 counts, the histogram was obtained and multiple exponential fitting process was used to extract the lifetime associated with the traps within the bandgap. Results: At room temperature, the breakdown voltage of the SPAD is ∼11.4V and shows a temperature coefficient of 7.7mV/°C. The dark noise of SPAD increases with both the excess biasing voltage and temperature. The primary dark counts from the model were validated against the measurement results. A maximum relative error of 8.7% is observed at 20 °C with an excess voltage of 0.5V. The probabilities of after-pulsing are found to be dependent of both temperature and excess voltage. With 0.5V excess voltage, the after-pulsing probability is 63.5% at - 30 °C and drops to ∼6.6% at 40 °C. Conclusion: A comprehensive noise model for SPAD sensor was proposed. The model takes into account of static, dynamic and statistical behavior of SPADs. We believe that this is the first SPAD circuit simulation model that includes the band-to-band tunneling dark noise contribution and temporal dependence of the after-pulsing probability.« less

Fabrication of reproducible, integration-compatible hybrid molecular/si electronics.

PubMed

Yu, Xi; Lovrinčić, Robert; Kraynis, Olga; Man, Gabriel; Ely, Tal; Zohar, Arava; Toledano, Tal; Cahen, David; Vilan, Ayelet

2014-12-29

Reproducible molecular junctions can be integrated within standard CMOS technology. Metal-molecule-semiconductor junctions are fabricated by direct Si-C binding of hexadecane or methyl-styrene onto oxide-free H-Si(111) surfaces, with the lateral size of the junctions defined by an etched SiO2 well and with evaporated Pb as the top contact. The current density, J, is highly reproducible with a standard deviation in log(J) of 0.2 over a junction diameter change from 3 to 100 μm. Reproducibility over such a large range indicates that transport is truly across the molecules and does not result from artifacts like edge effects or defects in the molecular monolayer. Device fabrication is tested for two n-Si doping levels. With highly doped Si, transport is dominated by tunneling and reveals sharp conductance onsets at room temperature. Using the temperature dependence of current across medium-doped n-Si, the molecular tunneling barrier can be separated from the Si-Schottky one, which is a 0.47 eV, in agreement with the molecular-modified surface dipole and quite different from the bare Si-H junction. This indicates that Pb evaporation does not cause significant chemical changes to the molecules. The ability to manufacture reliable devices constitutes important progress toward possible future hybrid Si-based molecular electronics. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ferromagnetic-Insulator-Based Superconducting Junctions as Sensitive Electron Thermometers

NASA Astrophysics Data System (ADS)

Giazotto, F.; Solinas, P.; Braggio, A.; Bergeret, F. S.

2015-10-01

We present an exhaustive theoretical analysis of charge and thermoelectric transport in a normal-metal-ferromagnetic-insulator-superconductor junction and explore the possibility of its use as a sensitive thermometer. We investigate the transfer functions and the intrinsic noise performance for different measurement configurations. A common feature of all configurations is that the best temperature-noise performance is obtained in the nonlinear temperature regime for a structure based on an Europium chalcogenide ferromagnetic insulator in contact with a superconducting Al film structure. For an open-circuit configuration, although the maximal intrinsic temperature sensitivity can achieve 10 nK Hz-1 /2 , a realistic amplifying chain will reduce the sensitivity up to 10 μ K Hz-1 /2 . To overcome this limitation, we propose a measurement scheme in a closed-circuit configuration based on state-of-the-art superconducting-quantum-interference-device detection technology in an inductive setup. In such a case, we show that temperature-noise can be as low as 35 nK Hz-1 /2 . We also discuss a temperature-to-frequency converter where the obtained thermovoltage developed over a Josephson junction operated in the dissipative regime is converted into a high-frequency signal. We predict that the structure can generate frequencies up to approximately 120 GHz and transfer functions up to 200 GHz /K at around 1 K. If operated as an electron thermometer, the device may provide temperature-noise lower than 35 nK Hz-1 /2 thereby being potentially attractive for radiation-sensing applications.

Method Producing an SNS Superconducting Junction with Weak Link Barrier

NASA Technical Reports Server (NTRS)

Hunt, Brian D. (Inventor)

1999-01-01

A method of producing a high temperature superconductor Josephson element and an improved SNS weak link barrier element is provided. A YBaCuO superconducting electrode film is deposited on a substrate at a temperature of approximately 800 C. A weak link barrier layer of a nonsuperconducting film of N-YBaCuO is deposited over the electrode at a temperature range of 520 C. to 540 C. at a lower deposition rate. Subsequently a superconducting counter-electrode film layer of YBaCuO is deposited over the weak link barrier layer at approximately 800 C. The weak link barrier layer has a thickness of approximately 50 A and the SNS element can be constructed to provide an edge geometry junction.

Stagnation Temperature Recording

NASA Technical Reports Server (NTRS)

Wimmer, W

1941-01-01

The present report deals with the development of a thermometer for recording stagnation temperature in compressible mediums in turbulent flow within 1 to 2 percent error of the adiabatic temperature in the stagnation point, depending upon the speed. This was achieved by placing the junction of a thermocouple near the stagnation point of an aerodynamically beneficial body, special care being taken to assure an uninterrupted supply of fresh compressed air on the junction together with the use of metals of low thermal conductivity, thus keeping heat-transfer and heat-dissipation losses to a minimum. In other experiments the use of the plate thermometer was proved unsuitable for practical measurements by reason of its profound influence in the reading by the Reynolds number and by the direction of flow.

New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube™ integration

NASA Astrophysics Data System (ADS)

Diaz Llorente, C.; Le Royer, C.; Batude, P.; Fenouillet-Beranger, C.; Martinie, S.; Lu, C.-M. V.; Allain, F.; Colinge, J.-P.; Cristoloveanu, S.; Ghibaudo, G.; Vinet, M.

2018-06-01

This paper reports the fabrication and electrical characterization of planar SOI Tunnel FETs (TFETs) made using a Low-Temperature (LT) process designed for 3D sequential integration. These proof-of-concept TFETs feature junctions obtained by Solid Phase Epitaxy Regrowth (SPER). Their electrical behavior is analyzed and compared to reference samples (regular process using High-Temperature junction formation, HT). Dual ID-VDS measurements verify that the TFET structures present Band-to-Band tunnelling (BTBT) carrier injection and not Schottky Barrier tunnelling. P-mode operating LT TFETs deliver an ON state current similar to that of the HT reference, opening the door towards optimized devices operating with very low threshold voltage VTH and low supply voltage VDD.

Advanced high temperature thermoelectrics for space power

NASA Technical Reports Server (NTRS)

Lockwood, A.; Ewell, R.; Wood, C.

1981-01-01

Preliminary results from a spacecraft system study show that an optimum hot junction temperature is in the range of 1500 K for advanced nuclear reactor technology combined with thermoelectric conversion. Advanced silicon germanium thermoelectric conversion is feasible if hot junction temperatures can be raised roughly 100 C or if gallium phosphide can be used to improve the figure of merit, but the performance is marginal. Two new classes of refractory materials, rare earth sulfides and boron-carbon alloys, are being investigated to improve the specific weight of the generator system. Preliminary data on the sulfides have shown very high figures of merit over short temperature ranges. Both n- and p-type doping have been obtained. Pure boron-carbide may extrapolate to high figure of merit at temperatures well above 1500 K but not lower temperature; n-type conduction has been reported by others, but not yet observed in the JPL program. Inadvertant impurity doping may explain the divergence of results reported.

A thermal microprobe fabricated with wafer-stage processing

NASA Astrophysics Data System (ADS)

Zhang, Yongxia; Zhang, Yanwei; Blaser, Juliana; Sriram, T. S.; Enver, Ahsan; Marcus, R. B.

1998-05-01

A thermal microprobe has been designed and built for high resolution temperature sensing. The thermal sensor is a thin-film thermocouple junction at the tip of an atomic force microprobe (AFM) silicon probe needle. Only wafer-stage processing steps are used for the fabrication. For high resolution temperature sensing it is essential that the junction be confined to a short distance at the AFM tip. This confinement is achieved by a controlled photoresist coating process. Experiment prototypes have been made with an Au/Pd junction confined to within 0.5 μm of the tip, with the two metals separated elsewhere by a thin insulating oxide layer. Processing begins with double-polished, n-type, 4 in. diameter, 300-μm-thick silicon wafers. Atomically sharp probe tips are formed by a combination of dry and wet chemical etching, and oxidation sharpening. The metal layers are sputtering deposited and the cantilevers are released by a combination of KOH and dry etching. A resistively heated calibration device was made for temperature calibration of the thermal microprobe over the temperature range 25-110 °C. Over this range the thermal outputs of two microprobes are 4.5 and 5.6 μV/K and is linear. Thermal and topographical images are also obtained from a heated tungsten thin film fuse.

Efficient Monolithic Perovskite/Silicon Tandem Solar Cell with Cell Area >1 cm(2).

PubMed

Werner, Jérémie; Weng, Ching-Hsun; Walter, Arnaud; Fesquet, Luc; Seif, Johannes Peter; De Wolf, Stefaan; Niesen, Bjoern; Ballif, Christophe

2016-01-07

Monolithic perovskite/crystalline silicon tandem solar cells hold great promise for further performance improvement of well-established silicon photovoltaics; however, monolithic tandem integration is challenging, evidenced by the modest performances and small-area devices reported so far. Here we present first a low-temperature process for semitransparent perovskite solar cells, yielding efficiencies of up to 14.5%. Then, we implement this process to fabricate monolithic perovskite/silicon heterojunction tandem solar cells yielding efficiencies of up to 21.2 and 19.2% for cell areas of 0.17 and 1.22 cm(2), respectively. Both efficiencies are well above those of the involved subcells. These single-junction perovskite and tandem solar cells are hysteresis-free and demonstrate steady performance under maximum power point tracking for several minutes. Finally, we present the effects of varying the intermediate recombination layer and hole transport layer thicknesses on tandem cell photocurrent generation, experimentally and by transfer matrix simulations.

Exploring High-Performance n-Type Thermoelectric Composites Using Amino-Substituted Rylene Dimides and Carbon Nanotubes.

PubMed

Wu, Guangbao; Zhang, Zhi-Guo; Li, Yongfang; Gao, Caiyan; Wang, Xin; Chen, Guangming

2017-06-27

Taking advantage of the high electrical conductivity of a single-walled carbon nanotube (SWCNT) and the large Seebeck coefficient of rylene diimide, a convenient strategy is proposed to achieve high-performance n-type thermoelectric (TE) composites containing a SWCNT and amino-substituted perylene diimide (PDINE) or naphthalene diimide (NDINE). The obtained n-type composites display greatly enhanced TE performance with maximum power factors of 112 ± 8 (PDINE/SWCNT) and 135 ± 14 (NDINE/SWCNT) μW m -1 K -2 . A short doping time of 0.5 h can ensure high TE performance. The corresponding TE module consisting of five p-n junctions reaches a large output power of 3.3 μW under a 50 °C temperature gradient. In addition, the n-type composites exhibit high air stability and excellent thermal stability. This design strategy benefits the future fabricating of high-performance n-type TE materials and devices.

High performance InP JFETs grown by MOCVD using tertiarybutylphosphine

NASA Astrophysics Data System (ADS)

Hashemi, M. M.; Shealy, J. B.; Corvini, P. J.; Denbaars, S. P.; Mishra, U. K.

1994-02-01

Indium phosphide channel junction field effect transistors were fabricated by metalorganic chemical vapor deposition using tertiarybulylphosphine (TBP) as the alternative source for phosphine. At growth temperatures of 600°C, InP with specular surface morphology and mobilities as high as 61000 cm2/V s at 77Khas been achieved using trimethylindium and TBP. To improve device isolation, pinch-off characteristics, and output transconductance, we employ a high resistivity (1 × 108 Ω-cm) semi-insulating InP buffer layer using ferrocene as the Fe-dopant. Devices with gate lengths of 1 urn exhibit very high extrinsic transconductance of 130 mS/mm, gate-drain breakdown voltage exceeding 20 V, maximum current density of >450 mA/mm with record high fT and fmax of 15 GHz and 35 GHz, respectively. These results indicate: that InP JFETs are promising electronic devices for microwave power amplification, and that TBP is capable of device quality materials.

Effects of oxygen stoichiometry on the scaling behaviors of YBa2Cu3O(x) grain boundary weak-links

NASA Technical Reports Server (NTRS)

Wu, K. H.; Fu, C. M.; Jeng, W. J.; Juang, J. Y.; Uen, T. M.; Gou, Y. S.

1995-01-01

The effects of oxygen stoichiometry on the transport properties of the pulsed laser deposited YBa2Cu3O(x) bicrystalline grain boundary weak-link junctions were studied. It is found that not only the cross boundary resistive transition foot structure can be manipulated repeatedly with oxygen annealing processes but the junction behaviors are also altered in accordance. In the fully oxygenated state i.e with x = 7.0 in YBa2Cu3O(x) stoichiometry, the junction critical current exhibits a power of 2 scaling behavior with temperature. In contrast, when annealed in the conditions of oxygen-deficient state (e.g with x = 6.9 in YBa2Cu3O(x) stoichiometry) the junction critical current switches to a linear temperature dependence behavior. The results are tentatively attributed to the modification of the structure in the boundary area upon oxygen annealing, which, in turn, will affect the effective dimension of the geometrically constrained weak-link bridges. The detailed discussion on the responsible physical mechanisms as well as the implications of the present results on device applications will be given.

Junction Potentials Bias Measurements of Ion Exchange Membrane Permselectivity.

PubMed

Kingsbury, Ryan S; Flotron, Sophie; Zhu, Shan; Call, Douglas F; Coronell, Orlando

2018-04-17

Ion exchange membranes (IEMs) are versatile materials relevant to a variety of water and waste treatment, energy production, and industrial separation processes. The defining characteristic of IEMs is their ability to selectively allow positive or negative ions to permeate, which is referred to as permselectivity. Measured values of permselectivity that equal unity (corresponding to a perfectly selective membrane) or exceed unity (theoretically impossible) have been reported for cation exchange membranes (CEMs). Such nonphysical results call into question our ability to correctly measure this crucial membrane property. Because weighing errors, temperature, and measurement uncertainty have been shown to not explain these anomalous permselectivity results, we hypothesized that a possible explanation are junction potentials that occur at the tips of reference electrodes. In this work, we tested this hypothesis by comparing permselectivity values obtained from bare Ag/AgCl wire electrodes (which have no junction) to values obtained from single-junction reference electrodes containing two different electrolytes. We show that permselectivity values obtained using reference electrodes with junctions were greater than unity for CEMs. In contrast, electrodes without junctions always produced permselectivities lower than unity. Electrodes with junctions also resulted in artificially low permselectivity values for AEMs compared to electrodes without junctions. Thus, we conclude that junctions in reference electrodes introduce two biases into results in the IEM literature: (i) permselectivity values larger than unity for CEMs and (ii) lower permselectivity values for AEMs compared to those for CEMs. These biases can be avoided by using electrodes without a junction.

Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications

PubMed Central

Salah, Tarek Ben; Khachroumi, Sofiane; Morel, Hervé

2010-01-01

Sensor technology is moving towards wide-band-gap semiconductors providing high temperature capable devices. Indeed, the higher thermal conductivity of silicon carbide, (three times more than silicon), permits better heat dissipation and allows better cooling and temperature management. Though many temperature sensors have already been published, little endeavours have been invested in the study of silicon carbide junction field effect devices (SiC-JFET) as a temperature sensor. SiC-JFETs devices are now mature enough and it is close to be commercialized. The use of its specific properties versus temperatures is the major focus of this paper. The SiC-JFETs output current-voltage characteristics are characterized at different temperatures. The saturation current and its on-resistance versus temperature are successfully extracted. It is demonstrated that these parameters are proportional to the absolute temperature. A physics-based model is also presented. Relationships between on-resistance and saturation current versus temperature are introduced. A comparative study between experimental data and simulation results is conducted. Important to note, the proposed model and the experimental results reflect a successful agreement as far as a temperature sensor is concerned. PMID:22315547

Multijunction solar cell design revisited: disruption of current matching by atmospheric absorption bands: Disruption of current matching by atmospheric absorption bands

DOE PAGES

McMahon, William E.; Friedman, Daniel J.; Geisz, John F.

2017-05-23

This paper re-examines the impact of atmospheric absorption bands on series-connected multijunction cell design, motivated by the numerous local efficiency maxima that appear as the number of junctions is increased. Some of the local maxima are related to the bottom subcell bandgap and are already well understood: As the bottom subcell bandgap is varied, a local efficiency maximum is produced wherever the bottom cell bandgap crosses an atmospheric absorption band. The optimal cell designs at these local maxima are generally current matched, such that all subcells have nearly the same short-circuit current. We systematically describe additional local maxima that occurmore » wherever an upper subcell bandgap encounters an atmospheric absorption band. Moreover, these local maxima are not current matched and become more prevalent as the number of junctions increases, complicating the solution space for five-junction and six-junction designs. A systematic framework for describing this complexity is developed, and implications for numerical convergence are discussed.« less

Effect of asymmetric interface on charge and spin transport across two dimensional electron gas with Dresselhaus spin-orbit coupling/ferromagnet junction

NASA Astrophysics Data System (ADS)

Srisongmuang, B.; Pasanai, K.

2018-04-01

We theoretically studied the effect of interfacial scattering on the transport of charge and spin across the junction of a two-dimensional electron gas with Dresselhaus spin-orbit coupling and ferromagnetic material junction, via the conductance (G) and the spin-polarization of the conductance spectra (P) using the scattering method. At the interface, not only were the effects of spin-conserving (Z0) and spin-flip scattering (Zf) considered, but also the interfacial Rashba spin-orbit coupling scattering (ZRSOC) , which was caused by the asymmetry of the interface, was taken into account, and all of them were modeled by the delta potential. It was found that G was suppressed with increasing Z0 , as expected. Interestingly, a particular value of Zf can cause G and P to reach a maximum value. In particular, ZRSOC plays a crucial role to reduce G and P in the metallic limit, but its influence on the tunneling limit was quite weak. On the other hand, the effect of ZRSOC was diminished in the tunneling limit of the magnetic junction.

Multijunction solar cell design revisited: disruption of current matching by atmospheric absorption bands: Disruption of current matching by atmospheric absorption bands

DOE Office of Scientific and Technical Information (OSTI.GOV)

McMahon, William E.; Friedman, Daniel J.; Geisz, John F.

This paper re-examines the impact of atmospheric absorption bands on series-connected multijunction cell design, motivated by the numerous local efficiency maxima that appear as the number of junctions is increased. Some of the local maxima are related to the bottom subcell bandgap and are already well understood: As the bottom subcell bandgap is varied, a local efficiency maximum is produced wherever the bottom cell bandgap crosses an atmospheric absorption band. The optimal cell designs at these local maxima are generally current matched, such that all subcells have nearly the same short-circuit current. We systematically describe additional local maxima that occurmore » wherever an upper subcell bandgap encounters an atmospheric absorption band. Moreover, these local maxima are not current matched and become more prevalent as the number of junctions increases, complicating the solution space for five-junction and six-junction designs. A systematic framework for describing this complexity is developed, and implications for numerical convergence are discussed.« less

Disturbance of tunneling coherence by oxygen vacancy in epitaxial Fe/MgO/Fe magnetic tunnel junctions.

PubMed

Miao, G X; Park, Y J; Moodera, J S; Seibt, M; Eilers, G; Münzenberg, M

2008-06-20

Oxygen vacancies in the MgO barriers of epitaxial Fe/MgO/Fe magnetic tunnel junctions are observed to introduce symmetry-breaking scatterings and hence open up channels for noncoherent tunneling processes that follow the normal WKB approximation. The evanescent waves inside the MgO barrier thus experience two-step tunneling, the coherent followed by the noncoherent process, and lead to lower tunnel magnetoresistance, higher junction resistance, as well as increased bias and temperature dependence. The characteristic length of the symmetry scattering process is determined to be about 1.6 nm.

Transverse junction vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Schaus, C. F.; Torres, A. J.; Cheng, Julian; Sun, S.; Hains, C.

1991-04-01

An all-epitaxial, transverse-junction GaAs/AlGaAs vertical-cavity surface-emitting laser (TJ-VCSEL) incorporating wavelength-resonant periodic gain is reported. Metalorganic chemical vapor deposition is used for epitaxial growth of a structure containing five GaAs quantum wells. The simple p(+)-p-n(+) transverse junction is fabricated using reactive ion etching and diffusion techniques. Contacts are situated on the wafer surface resulting in a nearly planar structure. The device exhibits a room-temperature threshold of 48 mA (pulsed) and a resolution-limited spectral width of 0.11 nm at an 855.8-nm lasing wavelength.

Manifestation of resonance-related chaos in coupled Josephson junctions

NASA Astrophysics Data System (ADS)

Shukrinov, Yu. M.; Hamdipour, M.; Kolahchi, M. R.; Botha, A. E.; Suzuki, M.

2012-11-01

Manifestation of chaos in the temporal dependence of the electric charge is demonstrated through the calculation of the maximal Lyapunov exponent, phase-charge and charge-charge Lissajous diagrams and correlation functions. It is found that the number of junctions in the stack strongly influences the fine structure in the current-voltage characteristics and a strong proximity effect results from the nonperiodic boundary conditions. The observed resonance-related chaos exhibits intermittency. The criteria for a breakpoint region with no chaos are obtained. Such criteria could clarify recent experimental observations of variations in the power output from intrinsic Josephson junctions in high temperature superconductors.

Low frequency critical current noise and two level system defects in Josephson junctions

NASA Astrophysics Data System (ADS)

Nugroho, Christopher Daniel

The critical current in a Josephson junction is known to exhibit a 1/falpha low frequency noise. Implemented as a superconducting qubit, this low frequency noise can lead to decoherence. While the 1/f noise has been known to arise from an ensemble of two level systems connected to the tunnel barrier, the precise microscopic nature of these TLSs remain a mystery. In this thesis we will present measurements of the 1/f alpha low frequency noise in the critical current and tunneling resistance of Al-AlOx-Al Josephson junctions. Measurements in a wide range of resistively shunted and unshunted junctions confirm the equality of critical current and tunneling resistance noise. That is the critical current fluctuation corresponds to fluctuations of the tunneling resistance. In not too small Al-AlOx-Al junctions we have found that the fractional power spectral density scales linearly with temperature. We confirmed that the 1/falpha power spectrum is the result of a large number of two level systems modulating the tunneling resistance. At small junction areas and low temperatures, the number of thermally active TLSs is insufficient to integrate out a featureless 1/ f spectral shape. By analyzing the spectral variance in small junction areas, we have been able to deduce the TLS defect density, n ≈ 2.53 per micrometer squared per Kelvin spread in the TLS energy per factor e in the TLS lifetimes. This density is consistent with the density of tunneling TLSs found in glassy insulators, as well as the density deduced from coherent TLSs interacting at qubit frequencies. The deduced TLS density combined with the magnitude of the 1/f power spectral density in large area junctions, gives an average TLS effective area, A ˜ 0.3 nanometer squared. In ultra small tunnel junctions, we have studied the time-domain dynamics of isolated TLSs. We have found a TLS whose dynamics is described by the quantum tunneling between the two localized wells, and a one-phonon absorption/emission switching rate. From the quantum limiting rate and the WKB approximation, we estimated that the TLS has a mass and tunneling distance product consistent with an atomic mass tunneling through crystal lattice distances. At higher temperatures TLSs have been found that obey a simple thermal activation dynamics. By analyzing the TLS response to an external electric field, we have deduced that the TLS electric dipole is in the order of, P ˜ 1 electron-Angstrom, consistent with the TLS having the charge of one electron tunneling through a disorder potential of distances, d ˜ 1 Angstrom.

Low Intensity Low Temperature (LILT) measurements and coefficients on new photovoltaic structures

NASA Technical Reports Server (NTRS)

Schelman, David A.; Jenkins, Philip P.; Brinker, David J.; Appelbaum, Joseph

1995-01-01

Past NASA missions to Mars, Jupiter, and the outer planets were powered by radioisotope thermal generators (RTG's). Although these devices proved to be reliable, their high cost and highly toxic radioactive heat source has made them far less desirable for future planetary missions. This has resulted in a renewed search for alternate energy sources, some of them being photovoltaic (PV) and thermophotovoltaic (TPV). Both of these alternate energy sources convert light/thermal energy directly into electricity. In order to create a viable PV and TPV data base for planetary mission planners and cell designers, we have compiled low temperature low intensity (LILT) I-V data on single junction and multi-junction high efficiency solar cells. The cells tested here represent the latest photovoltaic technology. Using this LILT data to calculate dI(sub SC)/dT, dV(sub OC)/dT, dFF/dT, and also as a function of intensity, an accurate prediction of cell performance under the AMO spectrum can be determined. When combined with QUantum efficiency at Low Temperature (QULT) data, one can further enhance the data by adding spectral variations to the measurements. This paper presents an overview of LILT measurements and is only intended to be used as a guideline for material selection and performance predictions. As single junction and multi-junction cell technologies emerge, new test data must be collected. Cell materials included are Si, GaAs/Ge, GainP/GaAs/Ge, InP, InGaAs/InP, InP/InGaAs/InP, and GainP. Temperatures range as low as -175 C and intensities range from 1 sun to .02 suns.

3-D laser confocal microscopy study of the oxidation of NdFeB magnets in atmospheric conditions

NASA Astrophysics Data System (ADS)

Meakin, J. P.; Speight, J. D.; Sheridan, R. S.; Bradshaw, A.; Harris, I. R.; Williams, A. J.; Walton, A.

2016-08-01

Neodymium iron boron (NdFeB) magnets are used in a number of important applications, such as generators in gearless wind turbines, motors in electric vehicles and electronic goods (e.g.- computer hard disk drives, HDD). Hydrogen can be used as a processing gas to separate and recycle scrap sintered Nd-Fe-B magnets from end-of-life products to form a powder suitable for recycling. However, the magnets are likely to have been exposed to atmospheric conditions prior to processing, and any oxidation could lead to activation problems for the hydrogen decrepitation reaction. Many previous studies on the oxidation of NdFeB magnets have been performed at elevated temperatures; however, few studies have been formed under atmospheric conditions. In this paper a combination of 3-D laser confocal microscopy and Raman spectroscopy have been used to assess the composition, morphology and rate of oxidation/corrosion on scrap sintered NdFeB magnets. Confocal microscopy has been employed to measure the growth of surface reaction products at room temperature, immediately after exposure to air. The results showed that there was a significant height increase at the triple junctions of the Nd-rich grain boundaries. Using Raman spectroscopy, the product was shown to consist of Nd2O3 and formed only on the Nd-rich triple junctions. The diffusion coefficient of the triple junction reaction product growth at 20 °C was determined to be approximately 4 × 10-13 cm2/sec. This value is several orders of magnitude larger than values derived from the diffusion controlled oxide growth observations at elevated temperatures in the literature. This indicates that the growth of the room temperature oxidation products are likely defect enhanced processes at the NdFeB triple junctions.

Fatigue delamination onset prediction in tapered composite laminates

NASA Technical Reports Server (NTRS)

Murri, Gretchen Bostaph; Salpekar, Satish A.; Obrien, T. Kevin

1989-01-01

Tapered (0 deg) laminates of S2/CE9000 and S2/SP250 glass/epoxies, and IM6/1827I graphite/epoxy were tested in cyclic tension. The specimens usually showed some initial stable delaminations in the tapered region, but these did not affect the stiffness of the specimens, and loading was continued until the specimens either delaminated unstably, or reached 10(exp 6) to 2 x 10(exp 7) million cycles with no unstable delamination. The final unstable delamination originated at the junction of the thin and tapered regions. A finite-element model was developed for the tapered laminate with and without the initial stable delaminations observed in the tests. The analysis showed that for both cases the most likely place for an opening (Mode 1) delamination to originate is at the junction of the taper and thin regions. For each material type, the models were used to calculate the strain energy release rate, G, associated with delaminations originating at that junction and growing either into the thin region or tapered region. For the materials tested, cyclic G(sub Imax) values from DCB tests were used with the maximum strain energy release rates calculated from the finite-element analysis to predict the onset of unstable delamination at the junction as a function of fatigue cycles. The predictions were compared to experimental values of maximum cyclic load as a function of cycles to unstable delamination from fatigue tests in tapered laminates. For the IM6/1827I and S2/SP250 laminates, the predictions agreed very well with the test data. Predicted values for the S2/CE9000 were conservative compared to the test data.

Measuring Thermal Diffusivity Of A High-Tc Superconductor

NASA Technical Reports Server (NTRS)

Powers, Charles E.; Oh, Gloria; Leidecker, Henning

1992-01-01

Technique for measuring thermal diffusivity of superconductor of high critical temperature based on Angstrom's temperature-wave method. Peltier junction generates temperature oscillations, which propagate with attenuation up specimen. Thermal diffusivity of specimen calculated from distance between thermocouples and amplitudes and phases of oscillatory components of thermocouple readings.

Microscale solid-state thermal diodes enabling ambient temperature thermal circuits for energy applications.

PubMed

Wang, Song; Cottrill, Anton L; Kunai, Yuichiro; Toland, Aubrey R; Liu, Pingwei; Wang, Wen-Jun; Strano, Michael S

2017-05-24

Thermal diodes, or devices that transport thermal energy asymmetrically, analogous to electrical diodes, hold promise for thermal energy harvesting and conservation, as well as for phononics or information processing. The junction of a phase change material and phase invariant material can form a thermal diode; however, there are limited constituent materials available for a given target temperature, particularly near ambient. In this work, we demonstrate that a micro and nanoporous polystyrene foam can house a paraffin-based phase change material, fused to PMMA, to produce mechanically robust, solid-state thermal diodes capable of ambient operation with Young's moduli larger than 11.5 MPa and 55.2 MPa above and below the melting transition point, respectively. Moreover, the composites show significant changes in thermal conductivity above and below the melting point of the constituent paraffin and rectification that is well-described by our previous theory and the Maxwell-Eucken model. Maximum thermal rectifications range from 1.18 to 1.34. We show that such devices perform reliably enough to operate in thermal diode bridges, dynamic thermal circuits capable of transforming oscillating temperature inputs into single polarity temperature differences - analogous to an electrical diode bridge with widespread implications for transient thermal energy harvesting and conservation. Overall, our approach yields mechanically robust, solid-state thermal diodes capable of engineering design from a mathematical model of phase change and thermal transport, with implications for energy harvesting.

Spin-dependent Seebeck effects in a graphene superlattice p-n junction with different shapes

NASA Astrophysics Data System (ADS)

Zhou, Benhu; Zhou, Benliang; Yao, Yagang; Zhou, Guanghui; Hu, Ming

2017-10-01

We theoretically calculate the spin-dependent transmission probability and spin Seebeck coefficient for a zigzag-edge graphene nanoribbon p-n junction with periodically attached stubs under a perpendicular magnetic field and a ferromagnetic insulator. By using the nonequilibrium Green’s function method combining with the tight-binding Hamiltonian, it is demonstrated that the spin-dependent transmission probability and spin Seebeck coefficient for two types of superlattices can be modulated by the potential drop, the magnetization strength, the number of periods of the superlattice, the strength of the perpendicular magnetic field, and the Anderson disorder strength. Interestingly, a metal to semiconductor transition occurs as the number of the superlattice for a crossed superlattice p-n junction increases, and its spin Seebeck coefficient is much larger than that for the T-shaped one around the zero Fermi energy. Furthermore, the spin Seebeck coefficient for crossed systems can be much pronounced and their maximum absolute value can reach 528 μV K-1 by choosing optimized parameters. Besides, the spin Seebeck coefficient for crossed p-n junction is strongly enhanced around the zero Fermi energy for a weak magnetic field. Our results provide theoretical references for modulating the thermoelectric properties of a graphene superlattice p-n junction by tuning its geometric structure and physical parameters.

Four-junction AlGaAs/GaAs laser power converter

NASA Astrophysics Data System (ADS)

Huang, Jie; Sun, Yurun; Zhao, Yongming; Yu, Shuzhen; Dong, Jianrong; Xue, Jiping; Xue, Chi; Wang, Jin; Lu, Yunqing; Ding, Yanwen

2018-04-01

Four-junction AlGaAs/GaAs laser power converters (LPCs) with n+-GaAs/p+-Al0.37Ga0.63As heterostructure tunnel junctions (TJs) have been designed and grown by metal-organic chemical vapor deposition (MOCVD) for converting the power of 808 nm lasers. A maximum conversion efficiency η c of 56.9% ± 4% is obtained for cells with an aperture of 3.14 mm2 at an input laser power of 0.2 W, while dropping to 43.3% at 1.5 W. Measured current–voltage (I–V) characteristics indicate that the performance of the LPC can be further improved by increasing the tunneling current density of TJs and optimizing the thicknesses of sub-cells to achieve current matching in LPC. Project financially supported by the National Natural Science Foundation of China (No. 61376065) and Zhongtian Technology Group Co. Ltd.

Effects of inorganic substances on water splitting in ion-exchange membranes; II. Optimal contents of inorganic substances in preparing bipolar membranes.

PubMed

Kang, Moon-Sung; Choi, Yong-Jin; Moon, Seung-Hyeon

2004-05-15

An approach to enhancing the water-splitting performance of bipolar membranes (BPMs) is introducing an inorganic substance at the bipolar (BP) junction. In this study, the immobilization of inorganic matters (i.e., iron hydroxides and silicon compounds) at the BP junction and the optimum concentration have been investigated. To immobilize these inorganic matters, novel methods (i.e., electrodeposition of the iron hydroxide and processing of the sol-gel to introduce silicon groups at the BP junction) were suggested. At optimal concentrations, the immobilized inorganic matters significantly enhanced the water-splitting fluxes, indicating that they provide alternative paths for water dissociation, but on the other hand possibly reduce the polarization of water molecules between the sulfonic acid and quaternary ammonium groups at high contents. Consequently, the amount of inorganic substances introduced should be optimized to obtain the maximum water splitting in the BPM.

Quantized thermal transport in single-atom junctions

NASA Astrophysics Data System (ADS)

Cui, Longji; Jeong, Wonho; Hur, Sunghoon; Matt, Manuel; Klöckner, Jan C.; Pauly, Fabian; Nielaba, Peter; Cuevas, Juan Carlos; Meyhofer, Edgar; Reddy, Pramod

2017-03-01

Thermal transport in individual atomic junctions and chains is of great fundamental interest because of the distinctive quantum effects expected to arise in them. By using novel, custom-fabricated, picowatt-resolution calorimetric scanning probes, we measured the thermal conductance of gold and platinum metallic wires down to single-atom junctions. Our work reveals that the thermal conductance of gold single-atom junctions is quantized at room temperature and shows that the Wiedemann-Franz law relating thermal and electrical conductance is satisfied even in single-atom contacts. Furthermore, we quantitatively explain our experimental results within the Landauer framework for quantum thermal transport. The experimental techniques reported here will enable thermal transport studies in atomic and molecular chains, which will be key to investigating numerous fundamental issues that thus far have remained experimentally inaccessible.

Detailed investigation of the bifurcation diagram of capacitively coupled Josephson junctions in high-Tc superconductors and its self similarity

NASA Astrophysics Data System (ADS)

Hamdipour, Mohammad

2018-04-01

We study an array of coupled Josephson junction of superconductor/insulator/superconductor type (SIS junction) as a model for high temperature superconductors with layered structure. In the current-voltage characteristics of this system there is a breakpoint region in which a net electric charge appear on superconducting layers, S-layers, of junctions which motivate us to study the charge dynamics in this region. In this paper first of all we show a current voltage characteristics (CVC) of Intrinsic Josephson Junctions (IJJs) with N=3 Junctions, then we show the breakpoint region in that CVC, then we try to investigate the chaos in this region. We will see that at the end of the breakpoint region, behavior of the system is chaotic and Lyapunov exponent become positive. We also study the route by which the system become chaotic and will see this route is bifurcation. Next goal of this paper is to show the self similarity in the bifurcation diagram of the system and detailed analysis of bifurcation diagram.

Very High Current Density Nb/AlN/Nb Tunnel Junctions for Low-Noise Submillimeter Mixers

NASA Technical Reports Server (NTRS)

Kawamura, Jonathan; Miller, David; Chen, Jian; Zmuidzinas, Jonas; Bumble, Bruce; LeDuc, Henry G.; Stern, Jeff A.

2000-01-01

We have fabricated and tested submillimeter-wave superconductor-insulator-superconductor (SIS) mixers using very high current density Nb/AlN/Nb tunnel junctions (J(sub c) approximately equal 30 kA/sq cm) . The junctions have low resistance-area products (R(sub N)A approximately 5.6 Omega.sq micron), good subgap to normal resistance ratios R(sub sg)/R(sub N) approximately equal 10, and good run-to-run reproducibility. From Fourier transform spectrometer measurements, we infer that omega.R(sub N)C = 1 at 270 GHz. This is a factor of 2.5 improvement over what is generally available with Nb/AlO(x)/Nb junctions suitable for low-noise mixers. The AlN-barrier junctions are indeed capable of low-noise operation: we measure an uncorrected receiver noise temperature of T(sub RX) = 110 K (DSB) at 533 GHz for an unoptimized device. In addition to providing wider bandwidth operation at lower frequencies, the AlN-barrier junctions will considerably improve the performance of THz SIS mixers by reducing RF loss in the tuning circuits.

Effect of quantum well position on the distortion characteristics of transistor laser

NASA Astrophysics Data System (ADS)

Piramasubramanian, S.; Ganesh Madhan, M.; Radha, V.; Shajithaparveen, S. M. S.; Nivetha, G.

2018-05-01

The effect of quantum well position on the modulation and distortion characteristics of a 1300 nm transistor laser is analyzed in this paper. Standard three level rate equations are numerically solved to study this characteristics. Modulation depth, second order harmonic and third order intermodulation distortion of the transistor laser are evaluated for different quantum well positions for a 900 MHz RF signal modulation. From the DC analysis, it is observed that optical power is maximum, when the quantum well is positioned near base-emitter interface. The threshold current of the device is found to increase with increasing the distance between the quantum well and the base-emitter junction. A maximum modulation depth of 0.81 is predicted, when the quantum well is placed at 10 nm from the base-emitter junction, under RF modulation. The magnitude of harmonic and intermodulation distortion are found to decrease with increasing current and with an increase in quantum well distance from the emitter base junction. A minimum second harmonic distortion magnitude of -25.96 dBc is predicted for quantum well position (230 nm) near to the base-collector interface for 900 MHz modulation frequency at a bias current of 20 Ibth. Similarly, a minimum third order intermodulation distortion of -38.2 dBc is obtained for the same position and similar biasing conditions.

Thermodynamic and achievable efficiencies for solar-driven electrochemical reduction of carbon dioxide to transportation fuels.

PubMed

Singh, Meenesh R; Clark, Ezra L; Bell, Alexis T

2015-11-10

Thermodynamic, achievable, and realistic efficiency limits of solar-driven electrochemical conversion of water and carbon dioxide to fuels are investigated as functions of light-absorber composition and configuration, and catalyst composition. The maximum thermodynamic efficiency at 1-sun illumination for adiabatic electrochemical synthesis of various solar fuels is in the range of 32-42%. Single-, double-, and triple-junction light absorbers are found to be optimal for electrochemical load ranges of 0-0.9 V, 0.9-1.95 V, and 1.95-3.5 V, respectively. Achievable solar-to-fuel (STF) efficiencies are determined using ideal double- and triple-junction light absorbers and the electrochemical load curves for CO2 reduction on silver and copper cathodes, and water oxidation kinetics over iridium oxide. The maximum achievable STF efficiencies for synthesis gas (H2 and CO) and Hythane (H2 and CH4) are 18.4% and 20.3%, respectively. Whereas the realistic STF efficiency of photoelectrochemical cells (PECs) can be as low as 0.8%, tandem PECs and photovoltaic (PV)-electrolyzers can operate at 7.2% under identical operating conditions. We show that the composition and energy content of solar fuels can also be adjusted by tuning the band-gaps of triple-junction light absorbers and/or the ratio of catalyst-to-PV area, and that the synthesis of liquid products and C2H4 have high profitability indices.

Thermodynamic and achievable efficiencies for solar-driven electrochemical reduction of carbon dioxide to transportation fuels

NASA Astrophysics Data System (ADS)

Singh, Meenesh R.; Clark, Ezra L.; Bell, Alexis T.

2015-11-01

Thermodynamic, achievable, and realistic efficiency limits of solar-driven electrochemical conversion of water and carbon dioxide to fuels are investigated as functions of light-absorber composition and configuration, and catalyst composition. The maximum thermodynamic efficiency at 1-sun illumination for adiabatic electrochemical synthesis of various solar fuels is in the range of 32-42%. Single-, double-, and triple-junction light absorbers are found to be optimal for electrochemical load ranges of 0-0.9 V, 0.9-1.95 V, and 1.95-3.5 V, respectively. Achievable solar-to-fuel (STF) efficiencies are determined using ideal double- and triple-junction light absorbers and the electrochemical load curves for CO2 reduction on silver and copper cathodes, and water oxidation kinetics over iridium oxide. The maximum achievable STF efficiencies for synthesis gas (H2 and CO) and Hythane (H2 and CH4) are 18.4% and 20.3%, respectively. Whereas the realistic STF efficiency of photoelectrochemical cells (PECs) can be as low as 0.8%, tandem PECs and photovoltaic (PV)-electrolyzers can operate at 7.2% under identical operating conditions. We show that the composition and energy content of solar fuels can also be adjusted by tuning the band-gaps of triple-junction light absorbers and/or the ratio of catalyst-to-PV area, and that the synthesis of liquid products and C2H4 have high profitability indices.

Refractory oxide insulated thermocouple designed and analyzed for high temperature applications

NASA Technical Reports Server (NTRS)

Popper, G. F.; Zeren, T. Z.

1969-01-01

Study establishes design criteria for constructing high temperature thermocouple to measure nuclear fuel pin temperature. The study included a literature search to determine the compatibility of material useful for thermocouples, a hot zone error analysis, and a prototype design for hot junction and connector pin connections.

Rocket engine hot-spot detector

NASA Astrophysics Data System (ADS)

Collamore, F. N.

1985-04-01

On high performance devices such as rocket engines it is desirable to know if local hot spots or areas of reduced cooling margin exist. The objective of this program is to design, fabricate and test an electronic hot spot detector capable of sensing local hot spot on the exterior circumference of a regeneratively cooled combustion chamber in order to avoid hardware damage. The electronic hot spot sensor consists of an array of 120 thermocouple elements which are bonded in a flexible belt of polyimide film. The design temperature range is from +30 F to +400 F continuously with an intermittent temperature of 500 F maximum. The thermocouple belt consists of 120 equally spaced copper-Constantan thermocouple junctions which is wrapped around the OMS liquid rocket engine combustion chamber, to monitor temperatures of individual cooling channels. Each thermocouple is located over a cooling channel near the injector end of the combustion chamber. The thermocouple array sensor is held in place by a spring loaded clamp band. Analyses show that in the event of a blocked cooling channel the surface temperature of the chamber over the blocked channel will rise from a normal operating temperature of approx. 300 F to approx. 600 F. The hot spot detector will respond quickly to this change with a response time constant less than 0.05 seconds. The hot spot sensor assembly is fabricated with a laminated construction of layers of Kapton film and an outer protective layer of fiberglass reinforced silicone rubber.

Laser balloon angioplasty: effect of tissue temperature on weld strength of human postmortem intima-media separations.

PubMed

Jenkins, R D; Sinclair, I N; Anand, R; Kalil, A G; Schoen, F J; Spears, J R

1988-01-01

Dehiscence of portions of atheromatous plaques fractured during percutaneous transluminal coronary angioplasty may contribute to both abrupt reclosure and gradual restenosis. Laser balloon angioplasty has been shown to be effective in welding human plaque-arterial wall separations in vitro by heating tissues with a Nd:YAG laser during balloon inflation. To define the potentially useful therapeutic range of tissue temperature required to achieve thermal welds, 220 1-cm diameter discs of human postmortem atheromatous aortic tissue, the intimal plaque of which had been separated from the media, were exposed to 3-25 watts of Nd:YAG laser radiation delivered over a 12-mm2 nominal spot size for 20 seconds via a 400-micron core optical fiber. As measured with a thermistor, adventitial temperature reflected the temperature at the plaque-media junction to within 10 degrees C. The degree of tissue temperature elevation was related to delivered energy, while effective tissue penetration increased to maximum depth of 3 mm at the highest power density. Strength of tissue welds was defined as the force required to shear opposing layers of welded segments. Adventitial tissue temperatures below 80 degrees C were not associated with appreciable welds, while equilibrium temperatures between 95 degrees C and 140 degrees C were consistently associated with effective mean weld strengths, which increased linearly from 25 to 110 g, respectively. Temperatures greater than 150 degrees C were associated with rapid tissue dehydration and charring. These data suggest that the therapeutic range of tissue temperature that provides effective thermal fusion of intima-media separations is broad and that the depth and degree of thermal coagulation can be controlled by manipulation of laser energy delivery.

Submillimeter SIS Mixers Using High Current Density Nb/AIN/Nb Tunnel Junctions and NbTiN Films

NASA Astrophysics Data System (ADS)

Kawamura, J.; Miller, D.; Chen, J.; Kooi, J.; Zmuidzinas, J.; Bumble, B.; Leduc, H.; Stern, J.

1999-03-01

We are currently exploring ways to improve the performance of SIS mixers above 700 GHz. One approach is to use NbTiN in place of Nb for all or some of the mixer circuitry. With its high gap frequency and low losses demonstrated up to 800 GHz, it should be possible to fabricate an all-NbTiN SIS mixer with near quantum-limited noise performance up to 1.2 THz. Using a quasioptical twin-slot two-junction mixer with NbTiN ground plane and wiring and hybrid Nb/A1N/NbTiN junctions, we measured an uncorrected receiver noise temperature of TRx ~ 500 K across 790-850 GHz at 4.2 K bath temperature. Our second approach is to reduce the RC product of the mixer by employing very high current density Nb/A1N/Nb junctions. By using these we will greatly relax the requirement on tuning circuits, which is where substantial losses occur in mixers operating above the Nb gap frequency. These junctions have resistance-area products of R_N*A ~ 5.6 Ohm um2, good subgap to normal resistance ratios, R_sg/R_N ~ 10, and good run-to-run reproducibility. From FTS measurements we infer that omega*R_N*C = 1 at 270 GHz in these junctions. This is a substantial improvement over that available using Nb/Al0x/Nb technology. The sensitivity of a receiver incorporating these high current density mixers is T_Rx = 110 K at 533 GHz using a design for lower J_c mixers, which is close to the best we have measured with lower J_c Nb/Al0x/Nb mixers.

Quantum Dynamics of a d-wave Josephson Junction

NASA Astrophysics Data System (ADS)

Bauch, Thilo

2007-03-01

Thilo Bauch ^1, Floriana Lombardi ^1, Tobias Lindstr"om ^2, Francesco Tafuri ^3, Giacomo Rotoli ^4, Per Delsing ^1, Tord Claeson ^1 1 Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, MC2, Chalmers University of Technology, S-412 96 G"oteborg, Sweden. 2 National Physical Laboratory, Queens Road, Teddington, Middlesex TW11 0LW, UK. 3 Istituto Nazionale per la Fisica della Materia-Dipartimento Ingegneria dell'Informazione, Seconda Universita di Napoli, Aversa (CE), Italy. 4 Dipartimento di Ingegneria Meccanica, Energetica e Gestionale, Universita of L'Aquila, Localita Monteluco, L'Aquila, Italy. We present direct observation of macroscopic quantum properties in an all high critical temperature superconductor d-wave Josephson junction. Although dissipation caused by low energy excitations is expected to strongly suppress quantum effects we demonstrate macroscopic quantum tunneling [1] and energy level quantization [2] in our d-wave Josephson junction. The results clearly indicate that the role of dissipation mechanisms in high temperature superconductors has to be revised, and may also have consequences for a new class of solid state ``quiet'' quantum bit with superior coherence time. We show that the dynamics of the YBCO grain boundary Josephson junctions fabricated on a STO substrate are strongly affected by their environment. As a first approximation we model the environment by the stray capacitance and stray inductance of the junction electrodes. The total system consisting of the junction and stray elements has two degrees of freedom resulting in two characteristic resonance frequencies. Both frequencies have to be considered to describe the quantum mechanical behavior of the Josephson circuit. [1] T. Bauch et al, Phys. Rev. Lett. 94, 087003 (2005). [2] T. Bauch et al, Science 311, 57 (2006).

Spectroscopic evidence of odd frequency superconducting order

PubMed Central

Pal, Avradeep; Ouassou, J. A.; Eschrig, M.; Linder, J.; Blamire, M. G.

2017-01-01

Spin filter superconducting S/I/N tunnel junctions (NbN/GdN/TiN) show a robust and pronounced Zero Bias Conductance Peak (ZBCP) at low temperatures, the magnitude of which is several times the normal state conductance of the junction. Such a conductance anomaly is representative of unconventional superconductivity and is interpreted as a direct signature of an odd frequency superconducting order. PMID:28106102

A closed cycle cascade Joule Thomson refrigerator for cooling Josephson junction magnetometers

NASA Technical Reports Server (NTRS)

Tward, E.; Sarwinski, R.

1985-01-01

A closed cycle cascade Joule Thomson refrigerator designed to cool Josephson Junction magnetometers to liquid helium temperature is being developed. The refrigerator incorporates 4 stages of cooling using the working fluids CF4 and He. The high pressure gases are provided by a small compressor designed for this purpose. The upper stages have been operated and performance will be described.

The free electron gas primary thermometer using an ordinary bipolar junction transistor approaches ppm accuracy.

PubMed

Mimila-Arroyo, J

2017-06-01

In this paper, it is demonstrated that the free electron gas primary thermometer based on a bipolar junction transistor is able to provide the temperature with an accuracy of a few parts per million. Its simple functioning principle exploits the behavior of the collector current when properly biased to extract the temperature. Using general purpose silicon transistors at the water triple point (273.16 K) and gallium melting point (302.9146), an accuracy of a few parts per million has been reached, constituting the simplest and the easiest to operate primary thermometer, that might be considered even for the redefinition of Kelvin.

The free electron gas primary thermometer using an ordinary bipolar junction transistor approaches ppm accuracy

NASA Astrophysics Data System (ADS)

Mimila-Arroyo, J.

2017-06-01

In this paper, it is demonstrated that the free electron gas primary thermometer based on a bipolar junction transistor is able to provide the temperature with an accuracy of a few parts per million. Its simple functioning principle exploits the behavior of the collector current when properly biased to extract the temperature. Using general purpose silicon transistors at the water triple point (273.16 K) and gallium melting point (302.9146), an accuracy of a few parts per million has been reached, constituting the simplest and the easiest to operate primary thermometer, that might be considered even for the redefinition of Kelvin.

Break-junction experiments on the zero-bias anomaly of non-magnetic and ferromagnetically ordered metals

NASA Astrophysics Data System (ADS)

Gloos, Kurt; Tuuli, Elina

2012-12-01

We have investigated break junctions of normal non-magnetic metals as well as ferromagnets at low temperatures. The point contacts with radii 0.15—15 nm showed zero-bias anomalies which can be attributed to Kondo scattering at a single Kondo impurity at the contact or to the switching of a single conducting channel. The Kondo temperatures derived from the width of the anomalies varied between 10 and 1000 K. These results agree well with literature data on atomic-size contacts of the ferromagnets as well as with spear-anvil type contacts on a wide variety of metals.

Time-dependent i-DFT exchange-correlation potentials with memory: applications to the out-of-equilibrium Anderson model

NASA Astrophysics Data System (ADS)

Kurth, Stefan; Stefanucci, Gianluca

2018-06-01

We have recently put forward a steady-state density functional theory (i-DFT) to calculate the transport coefficients of quantum junctions. Within i-DFT it is possible to obtain the steady density on and the steady current through an interacting junction using a fictitious noninteracting junction subject to an effective gate and bias potential. In this work we extend i-DFT to the time domain for the single-impurity Anderson model. By a reverse engineering procedure we extract the exchange-correlation (xc) potential and xc bias at temperatures above the Kondo temperature T K. The derivation is based on a generalization of a recent paper by Dittmann et al. [N. Dittmann et al., Phys. Rev. Lett. 120, 157701 (2018)]. Interestingly the time-dependent (TD) i-DFT potentials depend on the system's history only through the first time-derivative of the density. We perform numerical simulations of the early transient current and investigate the role of the history dependence. We also empirically extend the history-dependent TD i-DFT potentials to temperatures below T K. For this purpose we use a recently proposed parametrization of the i-DFT potentials which yields highly accurate results in the steady state.

Photon-detections via probing the switching current shifts of Josephson junctions

NASA Astrophysics Data System (ADS)

Wang, Yiwen; Zhou, Pinjia; Wei, Lianfu; Zhang, Beihong; Wei, Qiang; Zhai, Jiquan; Xu, Weiwei; Cao, Chunhai

2015-08-01

Phenomenally, Cooper pairs can be broken up by external energy and thus the Cooper-pair density in the superconducting electrodes of a Josephson junction (JJ) under radiation can be lowered accordingly. Therefore, by probing the shift of the switching current through the junction, the radiation power absorbed by the superconductors can be detected. Here, we experimentally demonstrate weak optical detections in two types of JJs: Al/AlOx/Al junction (Al-J) and Nb/AlOx/Nb junction (Nb-J), with the superconducting transition temperatures Tc ≈ 1.2K and 6.8 K respectively. The photon-induced switching current shifts are measured at ultra-low temperature (T ≈ 16mK) in order to significantly suppress thermal noises. It is observed that the Al-J has a higher sensitivity than the Nb-J, which is expected since Al has a smaller superconducting gap energy than Nb. The minimum detectable optical powers (at 1550 nm) with the present Al-J and Nb-J are measured as 8 pW and 2 nW respectively, and the noise equivalent power (NEP) are estimated to be 7 ×10-11W /√{ Hz } (for Nb-J) and 3 ×10-12W /√{ Hz } (for Al-J). We also find that the observed switching current responses are dominated by the photon-induced thermal effects. Several methods are proposed to further improve the device sensitivity, so that the JJ based devices can be applicable in photon detections.

Effect of temperature variations and thermal noise on the static and dynamic behavior of straintronics devices

NASA Astrophysics Data System (ADS)

Barangi, Mahmood; Mazumder, Pinaki

2015-11-01

A theoretical model quantifying the effect of temperature variations on the magnetic properties and static and dynamic behavior of the straintronics magnetic tunneling junction is presented. Four common magnetostrictive materials (Nickel, Cobalt, Terfenol-D, and Galfenol) are analyzed to determine their temperature sensitivity and to provide a comprehensive database for different applications. The variations of magnetic anisotropies are studied in detail for temperature levels up to the Curie temperature. The energy barrier of the free layer and the critical voltage required for flipping the magnetization vector are inspected as important metrics that dominate the energy requirements and noise immunity when the device is incorporated into large systems. To study the dynamic thermal noise, the effect of the Langevin thermal field on the free layer's magnetization vector is incorporated into the Landau-Lifshitz-Gilbert equation. The switching energy, flipping delay, write, and hold error probabilities are studied, which are important metrics for nonvolatile memories, an important application of the straintronics magnetic tunneling junctions.

Indium Gallium Nitride Multijunction Solar Cell Simulation Using Silvaco Atlas

DTIC Science & Technology

2007-06-01

models is of great interest in space applications. By increasing the efficiency of photovoltaics, the number of solar panels is decreased. Therefore...obtained in single-junction solar cells by using Gallium Arsenide. Monocrystalline Gallium Arsenide has a maximum efficiency of approximately 25.1% [10

Fabrication of Optimized Superconducting Phase Inverters Based on Superconductor-Ferromagnet-Superconductor pi π -Junctions

NASA Astrophysics Data System (ADS)

Bolginov, V. V.; Rossolenko, A. N.; Shkarin, A. B.; Oboznov, V. A.; Ryazanov, V. V.

2018-03-01

We have implemented a trilayer technological approach to fabricate Nb-Cu_{0.47} Ni_{0.53}-Nb superconducting phase inverters (π -junctions) with enhanced critical current. Within this technique, all three layers of the superconductor-ferromagnet-superconductor junction deposited in a single vacuum cycle that have allowed us to obtain π -junctions with critical current density up to 20 kA/cm^2. The value achieved is a factor of 10 higher than for the step-by-step method used in earlier works. Our additional experiments have shown that this difference is related to a bilayered CuNi/Cu barrier used in the case of the step-by-step technique and interlayer diffusion at the CuNi/Cu interface. We show that the interlayer diffusion can be utilized for fine tuning of the 0{-}π transition temperature of already fabricated junctions. The results obtained open new opportunities for the CuNi-based phase inverters in digital and quantum Josephson electronics.

Superconductor-normal-superconductor with distributed Sharvin point contacts

DOEpatents

Holcomb, Matthew J.; Little, William A.

1994-01-01

A non-linear superconducting junction device comprising a layer of high transient temperature superconducting material which is superconducting at an operating temperature, a layer of metal in contact with the layer of high temperature superconducting material and which remains non-superconducting at the operating temperature, and a metal material which is superconducting at the operating temperature and which forms distributed Sharvin point contacts with the metal layer.

Origin of hydrogen-inclusion-induced critical current deviation in Nb/AlOx/Al/Nb Josephson junctions

NASA Astrophysics Data System (ADS)

Hinode, Kenji; Satoh, Tetsuro; Nagasawa, Shuichi; Hidaka, Mutsuo

2010-04-01

We investigated the mechanisms that change the critical current density (Jc) of Nb/AlOx/Al/Nb Josephson junctions due to the inclusion of hydrogen in the Nb electrodes. Our investigations were performed according to three aspects: the superconductivity change, the change in thickness of the barrier layer, and the change in the barrier height due to the electronic effect. The results are as follows: (a) the hydrogen-inclusion-accompanied changes in the superconductivity parameters, such as the junction gap voltage, were much less than those of the critical current density, (b) the effect of hydrogen inclusion on Jc varied depending on the electrodes, i.e., the upper electrode above the barrier layer was the most affected, (c) the junctions with increased Ics due to hydrogen exclusion showed the identical amount of decrease in the junction resistance measured at room temperature, and (d) the hydrogen exclusion from the junction electrodes had no influence on the Nb/Al/AlOx/Al/Nb junctions, which had an extra Al layer. Based on these results we conclude that the Jc change is mainly caused by the change in junction resistance. A one order of magnitude smaller effect is caused by the superconductivity change. We believe the Jc change is caused by a Nb work function increase due to the hydrogen inclusion, resulting in an increase in barrier height.

(abstract) PV Technology for Low Intensity, Low Temperature (LILT) Applications

NASA Technical Reports Server (NTRS)

Stella, Paul M.; Pool, Frederick S.; Nicolet, Marc A.; Iles, Peter A.

1994-01-01

As a result of the recent NASA emphasis on smaller, lower cost space missions, PV is now being considered for a number of missions operating at solar distances of 3 AU or greater. In the past, many of these missions would utilize an RTG (radioisotope thermoelectric generator). Historically, silicon solar cell behavior at these distances has been compromised by a number of mechanisms including shunting, nonohmic back contacts, and the 'broken knee' curve shape. The former two can usually be neglected for modern silicon cells, but the latter has not been eliminated. This problem has been identified with localized diffusion at the top contact/silicon interface which leads to structural changes at the local junction. This is believed to create a resistive metal-semiconductor-like (MSL) interface in parallel with the junction which results in the characteristic forms of the LILT (low intensity, low temperature) 'broken knee'. This paper discusses a TaSiN contact barrier that will prevent the MSL structure in the junction.

PV Technology for Low Intensity, Low Temperature (LILT) Applications

NASA Technical Reports Server (NTRS)

Stella, Paul M.; Pool, Frederick S.; Nicolet, Marc A.; Iles, Peter A.

1994-01-01

As a result of the recent NASA emphasis on smaller, lower cost space missions, PV is now being considered for a number of missions operating at solar distances of 3 AU or greater. In the past, many of these missions would utilize an RTG (radioisotope thermoelectric generator). Historically, silicon solar cell behavior at these distances has been compromised by a number of mechanisms including shunting, nonohmic back contacts, and the 'broken knee' curve shape. The former two can usually be neglected for modern silicon cells, but the latter has not been eliminated. This problem has been identified with localized diffusion at the top contact/silicon interface which leads to structural changes at the local junction. This is believed to create a resistive metal-semiconductor-like (MSL) interface in parallel with the junction which results in the characteristic forms of the LILT (low intensity, low temperature) 'broken knee'. This paper discusses a TaSiN contact barrier that will prevent the MSL structure in the junction.

Thermocouple shield

DOEpatents

Ripley, Edward B [Knoxville, TN

2009-11-24

A thermocouple shield for use in radio frequency fields. In some embodiments the shield includes an electrically conductive tube that houses a standard thermocouple having a thermocouple junction. The electrically conductive tube protects the thermocouple from damage by an RF (including microwave) field and mitigates erroneous temperature readings due to the microwave or RF field. The thermocouple may be surrounded by a ceramic sheath to further protect the thermocouple. The ceramic sheath is generally formed from a material that is transparent to the wavelength of the microwave or RF energy. The microwave transparency property precludes heating of the ceramic sheath due to microwave coupling, which could affect the accuracy of temperature measurements. The ceramic sheath material is typically an electrically insulating material. The electrically insulative properties of the ceramic sheath help avert electrical arcing, which could damage the thermocouple junction. The electrically conductive tube is generally disposed around the thermocouple junction and disposed around at least a portion of the ceramic sheath. The concepts of the thermocouple shield may be incorporated into an integrated shielded thermocouple assembly.

Temperature-dependent Schottky barrier in high-performance organic solar cells

PubMed Central

Li, Hui; He, Dan; Zhou, Qing; Mao, Peng; Cao, Jiamin; Ding, Liming; Wang, Jizheng

2017-01-01

Organic solar cells (OSCs) have attracted great attention in the past 30 years, and the power conversion efficiency (PCE) now reaches around 10%, largely owning to the rapid material developments. Meanwhile with the progress in the device performance, more and more interests are turning to understanding the fundamental physics inside the OSCs. In the conventional bulk-heterojunction architecture, only recently it is realized that the blend/cathode Schottky junction serves as the fundamental diode for the photovoltaic function. However, few researches have focused on such junctions, and their physical properties are far from being well-understood. In this paper based on PThBDTP:PC71BM blend, we fabricated OSCs with PCE exceeding 10%, and investigated temperature-dependent behaviors of the junction diodes by various characterization including current-voltage, capacitance-voltage and impedance measurements between 70 to 290 K. We found the Schottky barrier height exhibits large inhomogeneity, which can be described by two sets of Gaussian distributions. PMID:28071700

Expansion of the Preimmune Antibody Repertoire by Junctional Diversity in Bos taurus

PubMed Central

Liljavirta, Jenni; Niku, Mikael; Pessa-Morikawa, Tiina; Ekman, Anna; Iivanainen, Antti

2014-01-01

Cattle have a limited range of immunoglobulin genes which are further diversified by antigen independent somatic hypermutation in fetuses. Junctional diversity generated during somatic recombination contributes to antibody diversity but its relative significance has not been comprehensively studied. We have investigated the importance of terminal deoxynucleotidyl transferase (TdT) -mediated junctional diversity to the bovine immunoglobulin repertoire. We also searched for new bovine heavy chain diversity (IGHD) genes as the information of the germline sequences is essential to define the junctional boundaries between gene segments. New heavy chain variable genes (IGHV) were explored to address the gene usage in the fetal recombinations. Our bioinformatics search revealed five new IGHD genes, which included the longest IGHD reported so far, 154 bp. By genomic sequencing we found 26 new IGHV sequences that represent potentially new IGHV genes or allelic variants. Sequence analysis of immunoglobulin heavy chain cDNA libraries of fetal bone marrow, ileum and spleen showed 0 to 36 nontemplated N-nucleotide additions between variable, diversity and joining genes. A maximum of 8 N nucleotides were also identified in the light chains. The junctional base profile was biased towards A and T nucleotide additions (64% in heavy chain VD, 52% in heavy chain DJ and 61% in light chain VJ junctions) in contrast to the high G/C content which is usually observed in mice. Sequence analysis also revealed extensive exonuclease activity, providing additional diversity. B-lymphocyte specific TdT expression was detected in bovine fetal bone marrow by reverse transcription-qPCR and immunofluorescence. These results suggest that TdT-mediated junctional diversity and exonuclease activity contribute significantly to the size of the cattle preimmune antibody repertoire already in the fetal period. PMID:24926997

Photon statistics of shot noise measured using a Josephson parametric amplifier

NASA Astrophysics Data System (ADS)

Simoneau, Jean Olivier; Virally, Stéphane; Lupien, Christian; Reulet, Bertrand

2015-03-01

Quantum measurements are very sensitive to external noise sources. Such measurements require careful amplification chain design so as not to overwhelm the signal with extraneous noise. A quantum-limited amplifier, like the Josephson parametric amplifier (paramp), is thus an ideal candidate for this purpose. We used a paramp to investigate the quantum noise of a tunnel junction. This measurement scheme allowed us to improve upon previous observations of shot noise by an order of magnitude in terms of noise temperature. With this setup, we have measured the second and fourth cumulants of current fluctuations generated by the tunnel junction within a 40 MHz bandwidth around 6 GHz. From theses measurements, we deduce the variance of the photon number fluctuations for various bias schemes of the junction. In particular, we investigate the regime where the junction emits pairs of photons.

The role of localized junction leakage in the temperature-dependent laser-beam-induced current spectra for HgCdTe infrared focal plane array photodiodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, A. L.; Li, G., E-mail: liguang1971@ahu.edu.cn, E-mail: xschen@mail.sitp.ac.cn; He, G.

2013-11-07

We have performed the study on the dependence of laser beam induced current (LBIC) spectra on the temperature for the vacancy-doped molecular beam epitaxy grown Hg{sub 1−x}Cd{sub x}Te (x = 0.31) photodiodes by both experiment and numerical simulations. It is found that the measured LBIC signal has different distributions for different temperature extents. The LBIC profile tends to be more asymmetric with increasing temperature below 170 K. But the LBIC profile becomes more symmetric with increasing temperature above 170 K. Based on a localized leakage model, it is indicated that the localized junction leakage can lead to asymmetric LBIC signal, in good agreement withmore » the experimental data. The reason is that the trap-assisted tunneling current is the dominant leakage current at the cryogenic temperature below 170 K while the diffusion current component becomes dominant above the temperature of 170 K. The results are helpful for us to better clarify the mechanism of the dependence of LBIC spectra on temperature for the applications of HgCdTe infrared photodiodes.« less

Investigation of temperature-dependent photoluminescence in multi-quantum wells.

PubMed

Fang, Yutao; Wang, Lu; Sun, Qingling; Lu, Taiping; Deng, Zhen; Ma, Ziguang; Jiang, Yang; Jia, Haiqiang; Wang, Wenxin; Zhou, Junming; Chen, Hong

2015-07-31

Photoluminescence (PL) is a nondestructive and powerful method to investigate carrier recombination and transport characteristics in semiconductor materials. In this study, the temperature dependences of photoluminescence of GaAs-AlxGa1-xAs multi-quantum wells samples with and without p-n junction were measured under both resonant and non-resonant excitation modes. An obvious increase of photoluminescence(PL) intensity as the rising of temperature in low temperature range (T < 50 K), is observed only for GaAs-AlxGa1-xAs quantum wells sample with p-n junction under non-resonant excitation. The origin of the anomalous increase of integrated PL intensity proved to be associated with the enhancement of carrier drifting because of the increase of carrier mobility in the temperature range from 15 K to 100 K. For non-resonant excitation, carriers supplied from the barriers will influence the temperature dependence of integrated PL intensity of quantum wells, which makes the traditional methods to acquire photoluminescence characters from the temperature dependence of integrated PL intensity unavailable. For resonant excitation, carriers are generated only in the wells and the temperature dependence of integrated PL intensity is very suitable to analysis the photoluminescence characters of quantum wells.

Effects of oxygen stoichiometry on the scaling behaviors of YBa{sub 2}Cu{sub 3}O{sub x} grain boundary weak-links

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, K.H.; Fu, C.M.; Jeng, W.J.

1994-12-31

The effects of oxygen stoichiometry on the transport properties of the pulsed laser deposited YBa{sub 2}Cu{sub 3}O{sub x} bicrystalline grain boundary weak-link junctions were studied. It is found that not only the cross boundary resistive transition foot structure can be manipulated repeatedly with oxygen annealling processes but the junction behaviors are also altered in accordance. In the fully oxygenated state i.e. with x=7.0 in YBa{sub 2}Cu{sub 3}O{sub x} stoichiometry, the junction critical current exhibits a power of 2 scaling behavior with temperature. In contrast, when annealed in the conditions of oxygen-deficient state (e.g. with x=6.9 in YBa{sub 2}Cu{sub 3}O{sub x}more » stoichiometry) the junction critical current switches to a linear temperature dependence behavior. The results are tentatively attributed to the modification of the structure in the boundary area upon oxygen annealing, which, in turn, will affect the effective dimension of the geometrically constrained weak-link bridges. The detailed discussion on the responsible physical mechanisms as well as the implications of the present results on device applications will be given.« less

Sputtered Metal Oxide Broken Gap Junctions for Tandem Solar Cells

NASA Astrophysics Data System (ADS)

Johnson, Forrest

Broken gap metal oxide junctions have been created for the first time by sputtering using ZnSnO3 for the n-type material and Cu 2O or CuAlO2 for the p-type material. Films were sputtered from either ceramic or metallic targets at room temperature from 10nm to 220nm thick. The band structure of the respective materials have theoretical work functions which line up with the band structure for tandem CIAGS/CIGS solar cell applications. Multiple characterization methods demonstrated consistent ohmic I-V profiles for devices on rough surfaces such as ITO/glass and a CIAGS cell. Devices with total junction specific contact resistance of under 0.001 Ohm-cm2 have been achieved with optical transmission close to 100% using 10nm films. Devices showed excellent stability up to 600°C anneals over 1hr using ZnSnO3 and CuAlO2. These films were also amorphous -a great diffusion barrier during top cell growth at high temperatures. Rapid Thermal Anneal (RTA) demonstrated the ability to shift the band structure of the whole device, allowing for tuning it to align with adjacent solar layers. These results remove a key barrier for mass production of multi-junction thin film solar cells.

Frequency response in short thermocouple wires

NASA Technical Reports Server (NTRS)

Forney, L. J.; Meeks, E. L.; Ma, J.; Fralick, G. C.

1992-01-01

Theoretical expressions are derived for the steady state frequency response of a thermocouple wire. In particular, the effects of axial heat conduction are demonstrated for a nonuniform wire with unequal material properties and wire diameters across the junction. The amplitude ratio at low frequency omega approaches 0 agrees with the results of Scadron and Warshawsky (1952) for a steady state temperature distribution. Moreover, the frequency response for a nonuniform wire in the limit of infinite length l approaches infinity is shown to reduce to a simple expression that is analogous to the classic first order solution for a thermocouple wire with uniform properties. Theoretical expressions are also derived for the steady state frequency response of a supported thermocouple wire. In particular, the effects of axial heat conduction are demonstrated for both a supported one material wire and a two material wire with unequal material properties across the junction. For the case of a one material supported wire, an exact solution is derived which compares favorably with an approximate expression that only matches temperatures at the support junction. Moreover, for the case of a two material supported wire, an analytical expression is derived that closely correlates numerical results. Experimental measurements are made for the steady state frequency response of a supported thermocouple wire. In particular, the effects of axial heat conduction are demonstrated for both a supported one material wire (type K) and a two material wire (type T) with unequal material properties across the junction. The data for the amplitude ratio and phase angle are correlated to within 10 pct. with the theoretical predictions of Forney and Fralick (1991). This is accomplished by choosing a natural frequency omega sub n for the wire data to correlate the first order response at large gas temperature frequencies. It is found that a large bead size, however, will increase the amplitude ratio at low frequencies but decrease the natural frequency of the wire. The phase angle data are also distorted for imperfect junctions.

Transport through correlated systems with density functional theory

NASA Astrophysics Data System (ADS)

Kurth, S.; Stefanucci, G.

2017-10-01

We present recent advances in density functional theory (DFT) for applications in the field of quantum transport, with particular emphasis on transport through strongly correlated systems. We review the foundations of the popular Landauer-Büttiker(LB)  +  DFT approach. This formalism, when using approximations to the exchange-correlation (xc) potential with steps at integer occupation, correctly captures the Kondo plateau in the zero bias conductance at zero temperature but completely fails to capture the transition to the Coulomb blockade (CB) regime as the temperature increases. To overcome the limitations of LB  +  DFT, the quantum transport problem is treated from a time-dependent (TD) perspective using TDDFT, an exact framework to deal with nonequilibrium situations. The steady-state limit of TDDFT shows that in addition to an xc potential in the junction, there also exists an xc correction to the applied bias. Open shell molecules in the CB regime provide the most striking examples of the importance of the xc bias correction. Using the Anderson model as guidance we estimate these corrections in the limit of zero bias. For the general case we put forward a steady-state DFT which is based on one-to-one correspondence between the pair of basic variables, steady density on and steady current across the junction and the pair local potential on and bias across the junction. Like TDDFT, this framework also leads to both an xc potential in the junction and an xc correction to the bias. Unlike TDDFT, these potentials are independent of history. We highlight the universal features of both xc potential and xc bias corrections for junctions in the CB regime and provide an accurate parametrization for the Anderson model at arbitrary temperatures and interaction strengths, thus providing a unified DFT description for both Kondo and CB regimes and the transition between them.

Long-term lumen depreciation behavior and failure modes of multi-die array LEDs

NASA Astrophysics Data System (ADS)

Jayawardena, Asiri; Marcus, Daniel; Prugue, Ximena; Narendran, Nadarajah

2013-09-01

One of the main advantages of multi-die array light-emitting diodes (LEDs) is their high flux density. However, a challenge for using such a product in lighting fixture applications is the heat density and the need for thermal management to keep the junction temperatures of all the dies low for long-term reliable performance. Ten multi-die LED array samples for each product from four different manufacturers were subjected to lumen maintenance testing (as described in IES-LM-80-08), and their resulting lumen depreciation and failure modes were studied. The products were tested at the maximum case (or pin) temperature reported by the respective manufacturer by appropriately powering the LEDs. In addition, three samples for each product from two different manufacturers were subjected to rapid thermal cycling, and the resulting lumen depreciation and failure modes were studied. The results showed that the exponential lumen decay model using long-term lumen maintenance data as recommended in IES TM-21 does not fit for all package types. The failure of a string of dies and single die failure in a string were observed in some of the packages.

Signatures of Induced Superconductivity in NbTi Contacted InAs Quantum Wells

NASA Astrophysics Data System (ADS)

McFadden, Anthony; Shabani, Javad; Shojaei, Borzoyeh; Lee, Joon Sue; Palmstrøm, Chris

We have studied electrical transport through InAs quantum wells grown by MBE with unannealed superconducting NbTi contacts deposited ex-situ and patterned by optical photolithography. Characterization of the InAs 2DEG's without superconducting contacts yields typical mobilities greater than 100,000 cm2/Vs at a density of 4e11 cm-2. NbTi-InAs-NbTi (SNS) and NbTi-InAs (SN) devices with dimensions greater than 1 µm are fabricated using optical lithography. Although the dimensions of the fabricated SNS devices are too large to observe a supercurrent, signatures of superconductivity induced in the InAs are present. We observe two superconducting critical temperatures: one of the NbTi leads (Tc~8K), and a second (Tc <4.5K) attributed to superconductivity induced in the InAs channel. dI/dV vs V spectroscopy on SNS junctions below the second critical temperature shows a conductance maximum at zero applied voltage while conductance minima appear at finite bias voltage which is attributed to the presence of an induced superconducting gap in the InAs quantum well. This work has been supported by Microsoft research.

Superlattice-based thin-film thermoelectric modules with high cooling fluxes

PubMed Central

Bulman, Gary; Barletta, Phil; Lewis, Jay; Baldasaro, Nicholas; Manno, Michael; Bar-Cohen, Avram; Yang, Bao

2016-01-01

In present-day high-performance electronic components, the generated heat loads result in unacceptably high junction temperatures and reduced component lifetimes. Thermoelectric modules can, in principle, enhance heat removal and reduce the temperatures of such electronic devices. However, state-of-the-art bulk thermoelectric modules have a maximum cooling flux qmax of only about 10 W cm−2, while state-of-the art commercial thin-film modules have a qmax <100 W cm−2. Such flux values are insufficient for thermal management of modern high-power devices. Here we show that cooling fluxes of 258 W cm−2 can be achieved in thin-film Bi2Te3-based superlattice thermoelectric modules. These devices utilize a p-type Sb2Te3/Bi2Te3 superlattice and n-type δ-doped Bi2Te3−xSex, both of which are grown heteroepitaxially using metalorganic chemical vapour deposition. We anticipate that the demonstration of these high-cooling-flux modules will have far-reaching impacts in diverse applications, such as advanced computer processors, radio-frequency power devices, quantum cascade lasers and DNA micro-arrays. PMID:26757675

High-Operating Temperature HgCdTe: A Vision for the Near Future

NASA Astrophysics Data System (ADS)

Lee, D.; Carmody, M.; Piquette, E.; Dreiske, P.; Chen, A.; Yulius, A.; Edwall, D.; Bhargava, S.; Zandian, M.; Tennant, W. E.

2016-09-01

We review recent advances in the HgCdTe material quality and detector performance achieved at Teledyne using molecular beam epitaxy growth and the double-layer planar hetero-junction (DLPH) detector architecture. By using an un-doped, fully depleted absorber, Teledyne's DLPH architecture can be extended for use in high operating temperatures and other applications. We assess the potential achievable performance for long wavelength infrared (LWIR) hetero-junction p-lightly-doped n or p-intrinsic- n (p-i-n) detectors based on recently reported results for 10.7 μm cutoff 1 K × 1 K focal plane arrays (FPAs) tested at temperatures down to 30 K. Variable temperature dark current measurements show that any Shockley-Read-Hall currents in the depletion region of these devices have lifetimes that are reproducibly greater than 100 ms. Under the assumption of comparable lifetimes at higher temperatures, it is predicted that fully-depleted background radiation-limited performance can be expected for 10- μm cutoff detectors from room temperature to well below liquid nitrogen temperatures, with room-temperature dark current nearly 400 times lower than predicted by Rule 07. The hetero-junction p-i-n diode is shown to have numerous other significant potential advantages including minimal or no passivation requirements for pBn-like processing, low 1/ f noise, compatibility with small pixel pitch while maintaining high modulation transfer function, low crosstalk and good quantum efficiency. By appropriate design of the FPA dewar shielding, analysis shows that dark current can theoretically be further reduced below the thermal equilibrium radiative limit. Modeling shows that background radiation-limited LWIR HgCdTe operating with f/1 optics has the potential to operate within √2 of background-limited performance at 215 K. By reducing the background radiation by 2/3 using novel shielding methods, operation with a single-stage thermo-electric-cooler may be possible. If the background radiation can be reduced by 90%, then room-temperature operation is possible.

Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions

NASA Astrophysics Data System (ADS)

Wu, Yao; Yan, Xin; Wei, Wei; Zhang, Jinnan; Zhang, Xia; Ren, Xiaomin

2018-04-01

We optimized the performance of GaAs nanowire pin junction array solar cells by introducing AlGaAs/GaAs heterejunctions. AlGaAs is used for the p type top segment for axial junctions and the p type outer shell for radial junctions. The AlGaAs not only serves as passivation layers for GaAs nanowires but also confines the optical generation in the active regions, reducing the recombination loss in heavily doped regions and the minority carrier recombination at the top contact. The results show that the conversion efficiency of GaAs nanowires can be greatly enhanced by using AlGaAs for the p segment instead of GaAs. A maximum efficiency enhancement of 8.42% has been achieved in this study. And for axial nanowire, by using AlGaAs for the top p segment, a relatively long top segment can be employed without degenerating device performance, which could facilitate the fabrication and contacting of nanowire array solar cells. While for radial nanowires, AlGaAs/GaAs nanowires show better tolerance to p-shell thickness and surface condition.

Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions.

PubMed

Wu, Yao; Yan, Xin; Wei, Wei; Zhang, Jinnan; Zhang, Xia; Ren, Xiaomin

2018-04-25

We optimized the performance of GaAs nanowire pin junction array solar cells by introducing AlGaAs/GaAs heterejunctions. AlGaAs is used for the p type top segment for axial junctions and the p type outer shell for radial junctions. The AlGaAs not only serves as passivation layers for GaAs nanowires but also confines the optical generation in the active regions, reducing the recombination loss in heavily doped regions and the minority carrier recombination at the top contact. The results show that the conversion efficiency of GaAs nanowires can be greatly enhanced by using AlGaAs for the p segment instead of GaAs. A maximum efficiency enhancement of 8.42% has been achieved in this study. And for axial nanowire, by using AlGaAs for the top p segment, a relatively long top segment can be employed without degenerating device performance, which could facilitate the fabrication and contacting of nanowire array solar cells. While for radial nanowires, AlGaAs/GaAs nanowires show better tolerance to p-shell thickness and surface condition.

Unfolding of a branched double-helical DNA three-way junction with triple-helical ends.

PubMed

Hüsler, P L; Klump, H H

1994-08-15

We have designed three oligonucleotides (33 mers) which when mixed in a 1:1:1 ratio form double-helical DNA three-way junctions with triple helical ends in the pH interval pH 4 to 5.5. The triplex to coil transition is initiated by raising the temperature and was recorded by temperature gradient gel electrophoresis, uv melting, and differential scanning calorimetry. The transitions can be deconvoluted into three subtransitions representing the independent thermal denaturation of each of the arms. We have proposed a model for the unfolding pathway and give the thermodynamic parameters for each step as calculated using the formalism outlined in the appendix.

Bypass Diode Temperature Tests of a Solar Array Coupon Under Space Thermal Environment Conditions

NASA Technical Reports Server (NTRS)

Wright, Kenneth H., Jr.; Schneider, Todd A.; Vaughn, Jason A.; Hoang, Bao; Wong, Frankie; Wu, Gordon

2016-01-01

Tests were performed on a 56-cell Advanced Triple Junction solar array coupon whose purpose was to determine margin available for bypass diodes integrated with new, large multi-junction solar cells that are manufactured from a 4-inch wafer. The tests were performed under high vacuum with coupon back side thermal conditions of both cold and ambient. The bypass diodes were subjected to a sequence of increasing discrete current steps from 0 Amp to 2.0 Amp in steps of 0.25 Amp. At each current step, a temperature measurement was obtained via remote viewing by an infrared camera. This paper discusses the experimental methodology, experiment results, and the thermal model.

By-Pass Diode Temperature Tests of a Solar Array Coupon Under Space Thermal Environment Conditions

NASA Technical Reports Server (NTRS)

Wright, Kenneth H., Jr.; Schneider, Todd A.; Vaughn, Jason A.; Hoang, Bao; Wong, Frankie

2016-01-01

Tests were performed on a 56-cell Advanced Triple Junction solar array coupon whose purpose was to determine margin available for bypass diodes integrated with new, large multi-junction solar cells that are manufactured from a 4-inch wafer. The tests were performed under high vacuum with cold and ambient coupon back-side. The bypass diodes were subjected to a sequence of increasing discrete current steps from 0 Amp to 2.0 Amp in steps of 0.25 Amp. At each current step, a temperature measurement was obtained via remote viewing by an infrared camera. This paper discusses the experimental methodology, including the calibration of the thermal imaging system, and the results.

All-spinel oxide Josephson junctions for high-efficiency spin filtering.

PubMed

Mesoraca, S; Knudde, S; Leitao, D C; Cardoso, S; Blamire, M G

2018-01-10

Obtaining high efficiency spin filtering at room temperature using spinel ferromagnetic tunnel barriers has been hampered by the formation of antiphase boundaries due to their difference in lattice parameters between barrier and electrodes. In this work we demonstrate the use of LiTi 2 O 4 thin films as electrodes in an all-spinel oxide CoFe 2 O 4 -based spin filter devices. These structures show nearly perfect epitaxy maintained throughout the structure and so minimise the potential for APBs formation. The LiTi 2 O 4 in these devices is superconducting and so measurements at low temperature have been used to explore details of the tunnelling and Josephson junction behaviour.

Gap features of layered iron-selenium-tellurium compound below and above the superconducting transition temperature by break-junction spectroscopy combined with STS

NASA Astrophysics Data System (ADS)

Ekino, T.; Sugimoto, A.; Gabovich, A. M.

2018-05-01

We studied correlations between the superconducting gap features of Te-substituted FeSe observed by scanning tunnelling spectroscopy (STS) and break-junction tunnelling spectroscopy (BJTS). At bias voltages outside the superconducting gap-energy range, the broad gap structure exists, which becomes the normal-state gap above the critical temperature, T c. Such behaviour is consistent with the model of the partially gapped density-wave superconductor involving both superconducting gaps and pseudogaps, which has been applied by us earlier to high-Tc cuprates. The similarity suggests that the parent electronic spectrum features should have much in common for these classes of materials.

High transmittance hetero junctions based on n-ITO/p-CuO bilayer thin films

NASA Astrophysics Data System (ADS)

Jaya, T. P.; Pradyumnan, P. P.

2016-12-01

Oxide based bilayered n-ITO/p-CuO crystalline diodes were fabricated by plasma vapor deposition using radio frequency magnetron sputtering. The p-n hetero junction diodes were highly transparent in the visible region and exhibits rectifying I-V characteristics. The substrate temperature during fabrication of p-layer CuO was found to have a profound influence on I-V characteristics. The films deposited at substrate temperature of 150 °C and 230 °C exhibited diode ideality factors of (η value) 1.731 and 1.862 respectively. This high ideality factor, combined with an optical transparency of above 70% suggests the potential use of these bi-layers in optoelectronic applications.

40 CFR 1065.315 - Pressure, temperature, and dewpoint calibration.

Code of Federal Regulations, 2011 CFR

2011-07-01

... quantities that are NIST-traceable within 0.5% uncertainty. (2) Temperature. We recommend digital dry-block... errors. We recommend using calibration reference quantities that are NIST-traceable within 0.5... NIST-traceable simulator that is independently calibrated and, as appropriate, cold-junction...

40 CFR 1065.315 - Pressure, temperature, and dewpoint calibration.

Code of Federal Regulations, 2010 CFR

2010-07-01

... quantities that are NIST-traceable within 0.5% uncertainty. (2) Temperature. We recommend digital dry-block... errors. We recommend using calibration reference quantities that are NIST-traceable within 0.5... NIST-traceable simulator that is independently calibrated and, as appropriate, cold-junction...

40 CFR 1065.315 - Pressure, temperature, and dewpoint calibration.

Code of Federal Regulations, 2012 CFR

2012-07-01

... quantities that are NIST-traceable within 0.5% uncertainty. (2) Temperature. We recommend digital dry-block... errors. We recommend using calibration reference quantities that are NIST-traceable within 0.5... NIST-traceable simulator that is independently calibrated and, as appropriate, cold-junction...

40 CFR 1065.315 - Pressure, temperature, and dewpoint calibration.

Code of Federal Regulations, 2014 CFR

2014-07-01

... quantities that are NIST-traceable within 0.5% uncertainty. (2) Temperature. We recommend digital dry-block... errors. We recommend using calibration reference quantities that are NIST-traceable within 0.5... NIST-traceable simulator that is independently calibrated and, as appropriate, cold-junction...

40 CFR 1065.315 - Pressure, temperature, and dewpoint calibration.

Code of Federal Regulations, 2013 CFR

2013-07-01

... quantities that are NIST-traceable within 0.5% uncertainty. (2) Temperature. We recommend digital dry-block... errors. We recommend using calibration reference quantities that are NIST-traceable within 0.5... NIST-traceable simulator that is independently calibrated and, as appropriate, cold-junction...

Fabrication of metallic single electron transistors featuring plasma enhanced atomic layer deposition of tunnel barriers

NASA Astrophysics Data System (ADS)

Karbasian, Golnaz

The continuing increase of the device density in integrated circuits (ICs) gives rise to the high level of power that is dissipated per unit area and consequently a high temperature in the circuits. Since temperature affects the performance and reliability of the circuits, minimization of the energy consumption in logic devices is now the center of attention. According to the International Technology Roadmaps for Semiconductors (ITRS), single electron transistors (SETs) hold the promise of achieving the lowest power of any known logic device, as low as 1x10-18 J per switching event. Moreover, SETs are the most sensitive electrometers to date, and are capable of detecting a fraction of an electron charge. Despite their low power consumption and high sensitivity for charge detection, room temperature operation of these devices is quite challenging mainly due to lithographical constraints in fabricating structures with the required dimensions of less than 10 nm. Silicon based SETs have been reported to operate at room temperature. However, they all suffer from significant variation in batch-to-batch performance, low fabrication yield, and temperature-dependent tunnel barrier height. In this project, we explored the fabrication of SETs featuring metal-insulator-metal (MIM) tunnel junctions. While Si-based SETs suffer from undesirable effect of dopants that result in irregularities in the device behavior, in metal-based SETs the device components (tunnel barrier, island, and the leads) are well-defined. Therefore, metal SETs are potentially more predictable in behavior, making them easier to incorporate into circuits, and easier to check against theoretical models. Here, the proposed fabrication method takes advantage of unique properties of chemical mechanical polishing (CMP) and plasma enhanced atomic layer deposition (PEALD). Chemical mechanical polishing provides a path for tuning the dimensions of the tunnel junctions, surpassing the limits imposed by electron beam lithography and lift-off, while atomic layer deposition provides precise control over the thickness of the tunnel barrier and significantly increases the choices for barrier materials. As described below in detail, the fabrication of ultra-thin (~1nm) tunnel transparent barriers with PEALD is in fact challenging; we demonstrate that in fabrication of SETs with PEALD to form the barrier in the Ni-insulator-Ni tunnel junctions, additional NiO layers are parasitically formed in the Ni layers that form the top and bottom electrodes of the tunnel junctions. The NiO on the bottom electrode is formed due to oxidizing effect of the O 2 plasma used in the PEALD process, while the NiO on the bottom of the top electrode is believed to form during the metal deposition due to oxygen-containing contaminants on the surface of the deposited tunnel barrier. We also show that due to the presence of these surface parasitic layers of NiO, the resistance of Ni-insulator-Ni tunnel junctions is drastically increased. Moreover, the transport mechanism is changed from quantum tunneling through the dielectric barrier to one consistent with the tunnel barrier in series with compound layers of NiO and possibly, NiSixOy. The parasitic component in the tunnel junctions results in conduction freeze-out at low temperatures, deviation of junction parameters from ideal model, and excessive noise in the device. The reduction of NiO to Ni is therefore necessary to restore the metal-insulator-metal structure of the junctions. We have studied forming gas anneal as well as H2 plasma treatment as techniques to reduce the NiO layers that are parasitically formed in the junctions. Using either of these two techniques, we reduced the NiO formed on the island after being covered with the PEALD dielectric and before defining the top source and drain. Later, the NiO formed on the bottom of the source/drain is reduced during a second reducing step after the source/drain are formed on the tunnel barrier. Electrical characterization of SETs that are made with the proposed reducing treatments enable us to study the effect of each reducing process on the properties of the constituent tunnel junctions. In comparison to the junctions annealed twice in forming gas at 400°C, we consistently observed a ~10x higher conductance in devices treated twice with H2 plasma at 300°C. The possible damage to the barrier during the plasma treatment and thermally induced film deformation during the anneal which respectively, is believed to increase and lower the conductance are among the possible cause of this difference. Although both types of treatments were effective in alleviating the effect of the activated components in the junctions, all the devices that were treated by two anneal steps or by two H2 plasma steps (for reducing the top and bottom NiO) show deviations from ideal simulated MIM SET model and suffer from significant random telegraph signal (RTS) noise. However, our results show that by using forming gas anneal for bottom NiO reduction and H2 plasma for the top NiO reduction, one can achieve devices close to ideal MIM SETs with significantly less noise.

A Homozygous Mutation in the Tight-Junction Protein JAM3 Causes Hemorrhagic Destruction of the Brain, Subependymal Calcification, and Congenital Cataracts

PubMed Central

Mochida, Ganeshwaran H.; Ganesh, Vijay S.; Felie, Jillian M.; Gleason, Danielle; Hill, R. Sean; Clapham, Katie Rose; Rakiec, Daniel; Tan, Wen-Hann; Akawi, Nadia; Al-Saffar, Muna; Partlow, Jennifer N.; Tinschert, Sigrid; Barkovich, A. James; Ali, Bassam; Al-Gazali, Lihadh; Walsh, Christopher A.

2010-01-01

The tight junction, or zonula occludens, is a specialized cell-cell junction that regulates epithelial and endothelial permeability, and it is an essential component of the blood-brain barrier in the cerebrovascular endothelium. In addition to functioning as a diffusion barrier, tight junctions are also involved in signal transduction. In this study, we identified a homozygous mutation in the tight-junction protein gene JAM3 in a large consanguineous family from the United Arab Emirates. Some members of this family had a rare autosomal-recessive syndrome characterized by severe hemorrhagic destruction of the brain, subependymal calcification, and congenital cataracts. Their clinical presentation overlaps with some reported cases of pseudo-TORCH syndrome as well as with cases involving mutations in occludin, another component of the tight-junction complex. However, massive intracranial hemorrhage distinguishes these patients from others. Homozygosity mapping identified the disease locus in this family on chromosome 11q25 with a maximum multipoint LOD score of 6.15. Sequence analysis of genes in the candidate interval uncovered a mutation in the canonical splice-donor site of intron 5 of JAM3. RT-PCR analysis of a patient lymphoblast cell line confirmed abnormal splicing, leading to a frameshift mutation with early termination. JAM3 is known to be present in vascular endothelium, although its roles in cerebral vasculature have not been implicated. Our results suggest that JAM3 is essential for maintaining the integrity of the cerebrovascular endothelium as well as for normal lens development in humans. PMID:21109224

Study and modeling of the transport mechanism in a Schottky diode on the basis of a GaAs semiinsulator

NASA Astrophysics Data System (ADS)

Resfa, A.; Smahi, Bourzig Y.; Menezla, Brahimi R.

2011-12-01

The current through a metal—semiconductor junction is mainly due to the majority carriers. Three distinctly different mechanisms exist in a Schottky diode: diffusion of the semiconductor carriers in metal, thermionic emission-diffusion (TED) of carriers through a Schottky gate, and a mechanical quantum that pierces a tunnel through the gate. The system was solved by using a coupled Poisson—Boltzmann algorithm. Schottky BH is defined as the difference in energy between the Fermi level and the metal band carrier majority of the metal—semiconductor junction to the semiconductor contacts. The insulating layer converts the MS device in an MIS device and has a strong influence on its current—voltage (I—V) and the parameters of a Schottky barrier from 3.7 to 15 eV. There are several possible reasons for the error that causes a deviation of the ideal behaviour of Schottky diodes with and without an interfacial insulator layer. These include the particular distribution of interface states, the series resistance, bias voltage and temperature. The GaAs and its large concentration values of trap centers will participate in an increase in the process of thermionic electrons and holes, which will in turn act on the I—V characteristic of the diode, and an overflow maximum value [NT = 3 × 1020] is obtained. The I—V characteristics of Schottky diodes are in the hypothesis of a parabolic summit.

Two dimensional thermal and charge mapping of power thyristors

NASA Technical Reports Server (NTRS)

Hu, S. P.; Rabinovici, B. M.

1975-01-01

The two dimensional static and dynamic current density distributions within the junction of semiconductor power switching devices and in particular the thyristors were obtained. A method for mapping the thermal profile of the device junctions with fine resolution using an infrared beam and measuring the attenuation through the device as a function of temperature were developed. The results obtained are useful in the design and quality control of high power semiconductor switching devices.

Development of High Temperature Superconducting Josephson Junction Device Technology

DTIC Science & Technology

1998-07-09

neodymium gallate , cerium oxide-buffered sapphire, and lanthanum aluminate, are not ideal for an in situ thallium cuprate junction technology. Moreover...determined that the standard HTS substrates, neodymium gallate , cerium oxide-buffered sapphire, and lanthanum aluminate, are not ideal for an in situ...2.2.1. Deposition Uniformity 10 2.2.2. Radiative Element 12 2.3. SUBSTRATES 13 2.3.1. Neodymium gallate 14 2.3.2. Cerium Oxide-Buffered Sapphire 16

Thermodynamic and achievable efficiencies for solar-driven electrochemical reduction of carbon dioxide to transportation fuels

PubMed Central

Singh, Meenesh R.; Clark, Ezra L.; Bell, Alexis T.

2015-01-01

Thermodynamic, achievable, and realistic efficiency limits of solar-driven electrochemical conversion of water and carbon dioxide to fuels are investigated as functions of light-absorber composition and configuration, and catalyst composition. The maximum thermodynamic efficiency at 1-sun illumination for adiabatic electrochemical synthesis of various solar fuels is in the range of 32–42%. Single-, double-, and triple-junction light absorbers are found to be optimal for electrochemical load ranges of 0–0.9 V, 0.9–1.95 V, and 1.95–3.5 V, respectively. Achievable solar-to-fuel (STF) efficiencies are determined using ideal double- and triple-junction light absorbers and the electrochemical load curves for CO2 reduction on silver and copper cathodes, and water oxidation kinetics over iridium oxide. The maximum achievable STF efficiencies for synthesis gas (H2 and CO) and Hythane (H2 and CH4) are 18.4% and 20.3%, respectively. Whereas the realistic STF efficiency of photoelectrochemical cells (PECs) can be as low as 0.8%, tandem PECs and photovoltaic (PV)-electrolyzers can operate at 7.2% under identical operating conditions. We show that the composition and energy content of solar fuels can also be adjusted by tuning the band-gaps of triple-junction light absorbers and/or the ratio of catalyst-to-PV area, and that the synthesis of liquid products and C2H4 have high profitability indices. PMID:26504215

Thermodynamic and achievable efficiencies for solar-driven electrochemical reduction of carbon dioxide to transportation fuels

DOE PAGES

Singh, Meenesh R.; Clark, Ezra L.; Bell, Alexis T.

2015-10-26

Thermodynamic, achievable, and realistic efficiency limits of solar-driven electrochemical conversion of water and carbon dioxide to fuels are investigated as functions of light-absorber composition and configuration, and catalyst composition. The maximum thermodynamic efficiency at 1-sun illumination for adiabatic electrochemical synthesis of various solar fuels is in the range of 32–42%. Single-, double-, and triple-junction light absorbers are found to be optimal for electrochemical load ranges of 0–0.9 V, 0.9–1.95 V, and 1.95–3.5 V, respectively. Achievable solar-to-fuel (STF) efficiencies are determined using ideal double- and triple-junction light absorbers and the electrochemical load curves for CO 2 reduction on silver and coppermore » cathodes, and water oxidation kinetics over iridium oxide. The maximum achievable STF efficiencies for synthesis gas (H 2 and CO) and Hythane (H 2 and CH 4) are 18.4% and 20.3%, respectively. Whereas the realistic STF efficiency of photoelectrochemical cells (PECs) can be as low as 0.8%, tandem PECs and photovoltaic (PV)-electrolyzers can operate at 7.2% under identical operating conditions. Finally, we show that the composition and energy content of solar fuels can also be adjusted by tuning the band-gaps of triple-junction light absorbers and/or the ratio of catalyst-to-PV area, and that the synthesis of liquid products and C 2H 4 have high profitability indices.« less

Phase I Study of Concomitant Pemetrexed and Cisplatin Plus External Beam Radiation Therapy in Patients with Locally Advanced or Metastatic Esophageal or Gastroesophageal Junction Carcinomas.

PubMed

Elquza, Emad; Babiker, Hani M; Howell, Krisha J; Kovoor, Andrew I; Brown, Thomas David; Patel, Hitendra; Malangone, Steven A; Borad, Mitesh J; Dragovich, Tomislav

2016-01-01

To establish the maximum tolerated dose (MTD) and safety profile of bi-weekly Pemetrexed (PEM) when combined with weekly cisplatin (CDDP) and standard dose external beam radiation (EBRT) in patients with locally advanced or metastatic esophageal and gastroesophageal junction (GEJ) carcinomas. We conducted an open label, single institution, phase I dose escalation study designed to evaluate up to 15-35 patients with advanced or metastatic esophageal and GEJ carcinomas. 10 patients were treated with bi-weekly PEM, weekly CDDP, and EBRT. The MTD of bi-weekly PEM was determined to be 500 mg/m(2).

Tree-hierarchy of DNA and distribution of Holliday junctions.

PubMed

Rozikov, U A

2017-12-01

We define a DNA as a sequence of [Formula: see text]'s and embed it on a path of Cayley tree. Using group representation of the Cayley tree, we give a hierarchy of a countable set of DNAs each of which 'lives' on the same Cayley tree. This hierarchy has property that each vertex of the Cayley tree belongs only to one of DNA. Then we give a model (energy, Hamiltonian) of this set of DNAs by an analogue of Ising model with three spin values (considered as DNA base pairs) on a set of admissible configurations. To study thermodynamic properties of the model of DNAs we describe corresponding translation invariant Gibbs measures (TIGM) of the model on the Cayley tree of order two. We show that there is a critical temperature [Formula: see text] such that (i) if temperature [Formula: see text] then there exists unique TIGM; (ii) if [Formula: see text] then there are two TIGMs; (iii) if [Formula: see text] then there are three TIGMs. Each such measure describes a phase of the set of DNAs. We use these results to study distributions of Holliday junctions and branches of DNAs. In case of very high and very low temperatures we give stationary distributions and typical configurations of the Holliday junctions.

Thermal Design and Characterization of Heterogeneously Integrated InGaP/GaAs HBTs

DOE PAGES

Choi, Sukwon; Peake, Gregory M.; Keeler, Gordon A.; ...

2016-04-21

Flip-chip heterogeneously integrated n-p-n InGaP/GaAs heterojunction bipolar transistors (HBTs) with integrated thermal management on wide-bandgap AlN substrates followed by GaAs substrate removal are demonstrated. Without thermal management, substrate removal after integration significantly aggravates self-heating effects, causing poor I–V characteristics due to excessive device self-heating. An electrothermal codesign scheme is demonstrated that involves simulation (design), thermal characterization, fabrication, and evaluation. Thermoreflectance thermal imaging, electrical-temperature sensitive parameter-based thermometry, and infrared thermography were utilized to assess the junction temperature rise in HBTs under diverse configurations. In order to reduce the thermal resistance of integrated devices, passive cooling schemes assisted by structural modification, i.e.,more » positioning indium bump heat sinks between the devices and the carrier, were employed. By implementing thermal heat sinks in close proximity to the active region of flip-chip integrated HBTs, the junction-to-baseplate thermal resistance was reduced over a factor of two, as revealed by junction temperature measurements and improvement of electrical performance. In conclusion, the suggested heterogeneous integration method accounts for not only electrical but also thermal requirements providing insight into realization of advanced and robust III–V/Si heterogeneously integrated electronics.« less

A low noise 230 GHz heterodyne receiver employing .25 sq micron area Nb/AlO(x)/Nb tunnel junctions

NASA Technical Reports Server (NTRS)

Kooi, Jacob W.; Chan, M.; Phillips, T. G.; Bumble, B.; Leduc, H. G.

1992-01-01

Recent results for a full height rectangular waveguide mixer with an integrated IF matching network are reported. Two 0.25 sq micron Nb/AlO(x)/Nb superconducting insulating superconducting (SIS) tunnel junctions with a current density of about 8500 A/sq cm and omega RC of about 2.5 at 230 GHz have been tested. Detailed measurements of the receiver noise have been made from 200-290 GHz for both junctions at 4.2 K. The lowest receiver noise temperatures were recorded at 239 GHz, measuring 48 K DSB at 4.2 K and 40 K DSB at 2.1 K. The 230 GHz receiver incorporates a one octave wide integrated low pass filter and matching network which transforms the pumped IF junction impedance to 50 ohms over a wide range of impedances.

Josephson current signatures of the Majorana flat bands on the surface of time-reversal-invariant Weyl and Dirac semimetals

NASA Astrophysics Data System (ADS)

Chen, Anffany; Pikulin, Dmitry I.; Franz, Marcel

A linear Josephson junction mediated by the surface states of a time-reversal-invariant Weyl or Dirac semimetal localizes Majorana flat bands protected by the time-reversal symmetry. We show that as a result, the Josephson current exhibits a discontinuous jump at π phase difference which can serve as an experimental signature of the Majorana bands. The magnitude of the jump scales proportionally to the junction length and the momentum space distance between the Weyl nodes projected onto the junction. It also exhibits a characteristic dependence on the junction orientation. We demonstrate that the jump is robust against the effects of non-zero temperature and weak non-magnetic disorder. This work was supported by NSERC and CIfAR. In addition A.C. acknowledges support by the 2016 Boulder Summer School for Condensed Matter and Materials Physics through NSF Grant DMR-13001648.

Current-phase relations in low carrier density graphene Josephson junctions

NASA Astrophysics Data System (ADS)

Kratz, Philip; Amet, Francois; Watson, Christopher; Moler, Kathryn; Ke, Chung; Borzenets, Ivan; Watanabe, Kenji; Taniguchi, Takashi; Deacon, Russell; Yamamoto, Michihisa; Bomze, Yuriy; Tarucha, Seigo; Finkelstein, Gleb

Ideal Dirac semimetals have the unique property of being gate tunable to arbitrarily low electron and hole carrier concentrations near the Dirac point, without suffering from conduction channel pinch-off or Fermi level pinning to band edges and deep-level charge traps, which are common in typical semiconductors. SNS junctions, where N is a Dirac semimetal, can provide a versatile platform for studying few-mode superconducting weak links, with potential device applications for superconducting logic and qubits. We will use an inductive readout technique, scanning superconducting quantum interference device (SQUID) magnetometry, to measure the current-phase relations of high-mobility graphene SNS junctions as a function of temperature and carrier density, complementing magnetic Fraunhofer diffraction analysis from transport measurements which previously have assumed sinusoidal current-phase relations for junction Andreev modes. Deviations from sinusoidal behavior convey information about resonant scattering processes, dissipation, and ballistic modes in few-mode superconducting weak links.

Balanced double-loop mesoscopic interferometer based on Josephson proximity nanojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ronzani, Alberto, E-mail: alberto.ronzani@nano.cnr.it; Altimiras, Carles; Giazotto, Francesco

We report on the fabrication and characterization of a two-terminal mesoscopic interferometer based on three V/Cu/V Josephson junctions having nanoscale cross-section. The junctions have been arranged in a double-ring geometry realized by metallic thin film deposition through a suspended mask defined by electron beam lithography. Although a significant amount of asymmetry between the critical current of each junction is observed, we show that the interferometer is able to suppress the supercurrent to a level lower than 6 parts per thousand, being here limited by measurement resolution. The present nano-device is suitable for low-temperature magnetometric and gradiometric measurements over the micrometricmore » scale.« less

Spin injection and detection in lateral spin valves with hybrid interfaces

NASA Astrophysics Data System (ADS)

Wang, Le; Liu, Wenyu; Ying, Hao; Chen, Luchen; Lu, Zhanjie; Han, Shuo; Chen, Shanshan; Zhao, Bing; Xu, Xiaoguang; Jiang, Yong

2018-06-01

Spin injection and detection in lateral spin valves with hybrid interfaces comprising a Co/Ag transparent contact and a Co/MgO/Ag junction (III) are investigated at room temperature in comparison with pure Co/Ag transparent contacts (I) and Co/MgO/Ag junctions (II). The measured spin-accumulation signals of a type III device are five times higher than those for type I. The extracted spin diffusion length in Ag is 180 nm for all three types of devices. The enhancement of the spin signal of the hybrid structure is mainly attributed to the increase of the interfacial spin polarization from the Co/MgO/Ag junction.

Simulation of radial solute segregation in vertical Bridgman growth of pyridine-doped benzene, a surrogate for binary organic nonlinear optical materials

NASA Astrophysics Data System (ADS)

Lee, Hanjie; Pearlstein, Arne J.

2000-09-01

We present steady axisymmetric computations of solute distributions and radial segregation for vertical Bridgman growth of pyridine-doped benzene, a binary aromatic system with anisotropic solid-phase thermal conductivity, that serves as a model of solute transport in crystal growth of organic nonlinear optical materials. The radial variation of solid-phase mass fraction ( Cs) of pyridine, which is rejected at the growing interface, depends strongly on growth conditions. High growth velocities tend to increase Cs near the centerline, the ampoule wall, or both, and low growth velocities give more nearly uniform radial distributions. The maximum ampoule-wall temperature gradient also affects radial segregation, with convex-to-the-liquid interfaces at small temperature gradients being associated with radially monotonic Cs distributions, and ridged interfaces at higher gradients being associated with nonmonotonic distributions having maxima at the centerline and ampoule wall. Nonuniformity is strongly determined by both interface shape and the nature of the flow near the interface. Solute is transported down to the interface by a large toroidal vortex, and swept radially inward to the centerline by a second, flattened toroidal cell. When the interface is depressed at its junction with the ampoule wall, rejected solute accumulates in the overlying liquid, where convection is relatively weak, resulting in local solute enrichment of the solid. Computations at normal and zero gravity show that for two very similar interface shapes, a maximum in the radial solid-phase solute distribution at the ampoule wall is associated with the interface shape, while the maximum on the centerline is associated with sweeping of solute to the centerline by a vortical flow on the interface. We also show that radial solute segregation depends significantly on whether account is taken of the anisotropy of the solid-phase thermal conductivity. Finally, the computations provide guidance as to the minimum ampoule length required to produce an axially uniform solute distribution over at least part of the length of a boule.

Metalliclike behavior of the exchange coupling in (001) Fe/MgO/Fe junctions

NASA Astrophysics Data System (ADS)

Bellouard, C.; Duluard, A.; Snoeck, E.; Lu, Y.; Negulescu, B.; Lacour, D.; Senet, C.; Robert, S.; Maloufi, N.; Andrieu, S.; Hehn, M.; Tiusan, C.

2017-10-01

Exchange magnetic coupling between Fe electrodes through a thin MgO interlayer in epitaxial junctions has been investigated as a function of temperature, MgO thickness, and interface quality. Depending on the MgO thickness, which has been varied from 1.5 to 4 monolayers, two opposite temperature dependences are clearly disentangled. For a thin MgO spacer, the main component decreases with temperature following a metalliclike behavior. On the contrary, for the thickest MgO layers, the main component increases with temperature, following an Arrhenius law. Moreover, the insertion of a monoatomic roughness at the bottom MgO interface, induced by the addition of a fraction of a Fe monolayer, exacerbates the metallic features as an oscillatory behavior from antiferromagnetic to ferromagnetic is observed. These results allow questioning the simple tunneling mechanism usually invoked for MgO coupling, and suggest a crossover behavior of the thin MgO spacer from metallic to insulating with a progressive opening of the gap.

Precise Heater Controller with rf-Biased Josephson Junctions

NASA Technical Reports Server (NTRS)

Green, Colin J.; Sergatskov, Dmitri A.; Duncan, R. V.

2003-01-01

Paramagnetic susceptibility thermometers used in fundamental physics experiments are capable of measuring temperature changes with a precision of a part in 2 x 10(exp 10). However, heater controllers are only able to control open-loop power dissipation to about a part in 10(exp 5). We used an array of rf-biased Josephson junctions to precisely control the electrical power dissipation in a heater resistor mounted on a thermally isolated cryogenic platform. Theoretically, this method is capable of controlling the electrical power dissipation to better than a part in 10(exp 12). However, this level has not yet been demonstrated experimentally. The experiment consists of a liquid helium cell that also functions as a high-resolution PdMn thermometer, with a heater resistor mounted on it. The cell is thermally connected to a temperature-controlled cooling stage via a weak thermal link. The heater resistor is electrically connected to the array of Josephson junctions using superconducting wire. An rf-biased array of capacitively shunted Josephson junctions drives the voltage across the heater. The quantized voltage across the resistor is Vn = nf(h/2e), where h is Planck's constant, f is the array biasing frequency, e is the charge of an electron, and n is the integer quantum state of the Josephson array. This results in an electrical power dissipation on the cell of Pn = (Vn)(sup 2/R), where R is the heater resistance. The change of the quantum state of the array changes the power dissipated in the heater, which in turn, results in the change of the cell temperature. This temperature change is compared to the expected values based on the known thermal standoff resistance of the cell from the cooling stage. We will present our initial experimental results and discuss future improvements. This work has been funded by the Fundamental Physics Discipline of the Microgravity Science Office of NASA, and supported by a no-cost equipment loan from Sandia National Laboratories.

Andreev current for low temperature thermometry

NASA Astrophysics Data System (ADS)

Faivre, T.; Golubev, D. S.; Pekola, J. P.

2015-05-01

We demonstrate experimentally that disorder enhanced Andreev current in a tunnel junction between a normal metal and a superconductor provides a method to measure electronic temperature, specifically at temperatures below 200 mK when aluminum is used. This Andreev thermometer has some advantages over conventional quasiparticle thermometers: For instance, it does not conduct heat and its reading does not saturate until at lower temperatures. Another merit is that the responsivity is constant over a wide temperature range.

Method of measuring field funneling and range straggling in semiconductor charge-collecting junctions

NASA Technical Reports Server (NTRS)

Zoutendyk, John A. (Inventor); Malone, Carl J. (Inventor)

1987-01-01

Electric-field funneling length is measured while irradiating a semiconductor charge-collecting junction with electron-hole-pair generating charged particles at a first junction bias voltage. The bias voltage is then reduced to a second level in order to reduce the depth of the depletion region such that the total charge can no longer be collected by drift and measured in the energy band previously displayed in the multichannel analyzer. This is representative of the maximum electric field funnelling length which may be calculated by measuring the difference at the second bias voltage level of the depletion width and the ion penetration range. The bias voltage is further lowered to a third level at which the particles are collected over a spread of energy levels while at least some of the particles are still collected at the selected energy level. From this the different depths of penetration of the particles are determined while additional effects due to diffusion are minimized.

Method of measuring field funneling and range straggling in semiconductor charge-collecting junctions

NASA Technical Reports Server (NTRS)

Zoutendyk, J. A. (Inventor)

1985-01-01

Electric-field funneling length is measured while irradiating a semiconductor charge-collecting junction with electron-hole-pair generating charged particles at a first junction bias voltage. The bias voltage is then reduced to a second level in order to reduce the depth of the depletion region such that the total charge can no longer be collected by drift and measured in the energy band previously displayed in the multichannel analyzer. This is representative of the maximum electric field funneling length which may be calculated by measuring the difference at the second bias voltage level of the depletion width and the ion penetration range. The bias voltage is further lowered to a third level at which the particles are collected over a spread of energy levels while at least some of the particles are still collected at the selected energy level. From this the different depths of penetration of the particles are determined while additional effects due to diffusion are minimized.

Influence of friction stir welding parameters on titanium-aluminum heterogeneous lap joining configuration

NASA Astrophysics Data System (ADS)

Picot, Florent; Gueydan, Antoine; Hug, Éric

2017-10-01

Lap joining configuration for Friction Stir Welding process is a methodology mostly dedicated to heterogeneous bonding. This welding technology was applied to join pure titanium with pure aluminum by varying the rotation speed and the movement speed of the tool. Regardless of the process parameters, it was found that the maximum strength of the junction remains almost constant. Microstructural observations by means of Scanning Electron Microscopy and Energy Dispersive Spectrometry analysis enable to describe the interfacial join and reveal asymmetric Cold Lap Defects on the sides of the junction. Chemical analysis shows the presence of one exclusive intermetallic compound through the interface identified as TiAl3. This compound is responsible of the crack spreading of the junction during the mechanical loading. The original version of this article supplied to AIP Publishing contained an accidental inversion of the authors, names. An updated version of this article, with the authors names formatted correctly was published on 20 October 2017.

Graphene Josephson Junction Single Photon Detector

NASA Astrophysics Data System (ADS)

Walsh, Evan D.; Lee, Gil-Ho; Efetov, Dmitri K.; Heuck, Mikkel; Crossno, Jesse; Taniguchi, Takashi; Watanabe, Kenji; Ohki, Thomas A.; Kim, Philip; Englund, Dirk; Fong, Kin Chung

Single photon detectors (SPDs) have found use across a wide array of applications depending on the wavelength to which they are sensitive. Graphene, because of its linear, gapless dispersion near the Dirac point, has a flat, wide bandwidth absorption that can be enhanced to near 100 % through the use of resonant structures making it a promising candidate for broadband SPDs. Upon absorbing a photon in the optical to mid-infrared range, a small (~10 μm2) sheet of graphene at cryogenic temperatures can experience a significant increase in electronic temperature due to its extremely low heat capacity. At 1550 nm, for example, calculations show that the temperature could rise by as much as 500 %. This temperature increase could be detected with near perfect quantum efficiency by making the graphene the weak link in a Josephson junction (JJ). We present a theoretical model demonstrating that such a graphene JJ SPD could operate at the readily achievable temperature of 3 K with near zero dark count, sub-50 ps timing jitter, and sub-5 ns dead time and report on the progress toward experimentally realizing the device.

Method for determining thermal conductivity and thermal capacity per unit volume of earth in situ

DOEpatents

Poppendiek, Heinz F.

1982-01-01

A method for determining the thermal conductivity of the earth in situ is based upon a cylindrical probe (10) having a thermopile (16) for measuring the temperature gradient between sets of thermocouple junctions (18 and 20) of the probe after it has been positioned in a borehole and has reached thermal equilibrium with its surroundings, and having means (14) for heating one set of thermocouple junctions (20) of the probe at a constant rate while the temperature gradient of the probe is recorded as a rise in temperature over several hours (more than about 3 hours). A fluid annulus thermally couples the probe to the surrounding earth. The recorded temperature curves are related to the earth's thermal conductivity, k.sub..infin., and to the thermal capacity per unit volume, (.gamma.c.sub.p).sub..infin., by comparison with calculated curves using estimates of k.sub..infin. and (.gamma.c.sub.p).sub..infin. in an equation which relates these parameters to a rise in the earth's temperature for a known and constant heating rate.

A Single-Level Tunnel Model to Account for Electrical Transport through Single Molecule- and Self-Assembled Monolayer-based Junctions

PubMed Central

Garrigues, Alvar R.; Yuan, Li; Wang, Lejia; Mucciolo, Eduardo R.; Thompon, Damien; del Barco, Enrique; Nijhuis, Christian A.

2016-01-01

We present a theoretical analysis aimed at understanding electrical conduction in molecular tunnel junctions. We focus on discussing the validity of coherent versus incoherent theoretical formulations for single-level tunneling to explain experimental results obtained under a wide range of experimental conditions, including measurements in individual molecules connecting the leads of electromigrated single-electron transistors and junctions of self-assembled monolayers (SAM) of molecules sandwiched between two macroscopic contacts. We show that the restriction of transport through a single level in solid state junctions (no solvent) makes coherent and incoherent tunneling formalisms indistinguishable when only one level participates in transport. Similar to Marcus relaxation processes in wet electrochemistry, the thermal broadening of the Fermi distribution describing the electronic occupation energies in the electrodes accounts for the exponential dependence of the tunneling current on temperature. We demonstrate that a single-level tunnel model satisfactorily explains experimental results obtained in three different molecular junctions (both single-molecule and SAM-based) formed by ferrocene-based molecules. Among other things, we use the model to map the electrostatic potential profile in EGaIn-based SAM junctions in which the ferrocene unit is placed at different positions within the molecule, and we find that electrical screening gives rise to a strongly non-linear profile across the junction. PMID:27216489

Electrical characterization of the temperature dependence in CdTe/CdS heterojunctions deposited in-situ by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Avila-Avendano, Jesus; Quevedo-Lopez, Manuel; Young, Chadwin

2018-02-01

The I-V and C-V characteristics of CdTe/CdS heterojunctions deposited in-situ by Pulsed Laser Deposition (PLD) were evaluated. In-situ deposition enables the study of the CdTe/CdS interface by avoiding potential impurities at the surface and interface as a consequence of exposure to air. The I-V and C-V characteristics of the resulting junctions were obtained at different temperatures, ranging from room temperature to 150 °C, where the saturation current (from 10-8 to 10-4 A/cm2), ideality factor (between 1 and 2), series resistance (from 102 to 105 Ω), built-in potential (0.66-0.7 V), rectification factor (˜106), and carrier concentration (˜1016 cm-3) were obtained. The current-voltage temperature dependence study indicates that thermionic emission is the main transport mechanism at the CdTe/CdS interface. This study also demonstrated that the built-in potential (Vbi) calculated using a thermionic emission model is more accurate than that calculated using C-V extrapolation since C-V plots showed a Vbi shift as a function of frequency. Although CdTe/CdS is widely used for photovoltaic applications, the parameters evaluated in this work indicate that CdTe/CdS heterojunctions could be used as rectifying diodes and junction field effect transistors (JFETs). JFETs require a low PN diode saturation current, as demonstrated for the CdTe/CdS junction studied here.

Time-Resolved Chemical Mapping in Light-Emitting Electrochemical Cells.

PubMed

Jafari, Mohammad Javad; Liu, Jiang; Engquist, Isak; Ederth, Thomas

2017-01-25

An understanding of the doping and ion distributions in light-emitting electrochemical cells (LECs) is required to approach a realistic conduction model which can precisely explain the electrochemical reactions, p-n junction formation, and ion dynamics in the active layer and to provide relevant information about LECs for systematic improvement of function and manufacture. Here, Fourier-transform infrared (FTIR) microscopy is used to monitor anion density profile and polymer structure in situ and for time-resolved mapping of electrochemical doping in an LEC under bias. The results are in very good agreement with the electrochemical doping model with respect to ion redistribution and formation of a dynamic p-n junction in the active layer. We also physically slow ions by decreasing the working temperature and study frozen-junction formation and immobilization of ions in a fixed-junction LEC device by FTIR imaging. The obtained results show irreversibility of the ion redistribution and polymer doping in a fixed-junction device. In addition, we demonstrate that infrared microscopy is a useful tool for in situ characterization of electroactive organic materials.

Cryogenic measurements of aerojet GaAs n-JFETs

NASA Technical Reports Server (NTRS)

Goebel, John H.; Weber, Theodore T.

1993-01-01

The spectral noise characteristics of Aerojet gallium arsenide (GaAs) junction field effect transistors (JFET's) have been investigated down to liquid-helium temperatures. Noise characterization was performed with the field effect transistor (FET) in the floating-gate mode, in the grounded-gate mode to determine the lowest noise readings possible, and with an extrinsic silicon photodetector at various detector bias voltages to determine optimum operating conditions. The measurements indicate that the Aerojet GaAs JFET is a quiet and stable device at liquid helium temperatures. Hence, it can be considered a readout line driver or infrared detector preamplifier as well as a host of other cryogenic applications. Its noise performance is superior to silicon (Si) metal oxide semiconductor field effect transistor (MOSFET's) operating at liquid helium temperatures, and is equal to the best Si n channel junction field effect transistor (n-JFET's) operating at 300 K.

Intrinsic Josephson junction behaviour of the low Tc superconductor (LaSe) 1.14(NbSe 2)

NASA Astrophysics Data System (ADS)

Kačmarčík, J.; Szabó, P.; Samuely, P.; Rodrigo, J. G.; Suderow, H.; Vieira, S.; Lafond, A.; Meerschaut, A.

2008-04-01

Interlayer magnetotransport measurements on the highly anisotropic (LaSe)1.14(NbSe2) superconductor with Tc ∼ 1.2 K have indicated that this layered compound represents a model system of intrinsic Josephson junctions [P. Szabó et al., Phys. Rev. Lett. 86 (2001) 5990]. Scanning tunneling microscopy at room temperature and tunneling spectroscopy measurements at very low temperatures are presented in this work. STM imaging has revealed the presence of two types of surfaces which can be attributed to the appearance of LaSe or NbSe2 layers on the surface. The use of STM tip made of superconducting lead enabled a precise measurement of the temperature dependence of the superconducting energy gap Δ(T) on the NbSe2 layer. Δ(T) obtained from the surface sensitive STS data support the scenario obtained from our previous interlayer - ergo bulk sensitive magnetotransport measurements.

Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Levinshtein, M. E., E-mail: melev@nimis.ioffe.ru; Ivanov, P. A.; Zhang, Q. J.

The forward-pulse isothermal current–voltage characteristics of 4H-SiC junction barrier Schottky rectifiers (JBSs) with a nominal blocking voltage of 1700 V are measured in the temperature range from–80 to +90°C (193–363 K) up to current densities j of ~5600 A/cm{sup 2} at–80°C and 3000 A/cm{sup 2} at +90°C. In these measurements, the overheating of the structures relative to the ambient temperature, ΔT, did not exceed several degrees. At higher current densities, the effective injection of minority carriers (holes) into the base of the structures is observed, which is accompanied by the appearance of an S-type differential resistance. The pulsed isothermal current–voltagemore » characteristics are also measured at a temperature of 77 K.« less

Catalyst-free, III-V nanowire photovoltaics

NASA Astrophysics Data System (ADS)

Davies, D. G.; Lambert, N.; Fry, P. W.; Foster, A.; Krysa, A. B.; Wilson, L. R.

2014-05-01

We report on room temperature, photovoltaic operation of catalyst-free GaAs p-i-n junction nanowire arrays. Growth studies were first performed to determine the optimum conditions for controlling the vertical and lateral growth of the nanowires. Following this, devices consisting of axial p-i-n junctions were fabricated by planarising the nanowire arrays with a hard baked polymer. We discuss the photovoltaic properties of this proof-of-concept device, and significant improvements to be made during the growth.

Current-voltage characteristics of n-AlMgZnO/p-GaN junction diodes

NASA Astrophysics Data System (ADS)

Hsueh, Kuang-Po; Cheng, Po-Wei; Cheng, Yi-Chang; Sheu, Jinn-Kong; Yeh, Yu-Hsiang; Chiu, Hsien-Chin; Wang, Hsiang-Chun

2013-03-01

This study investigates the temperature dependence of the current-voltage (I-V) characteristics of Al-doped MgxZn1-xO/p-GaN junction diodes. Specifically, this study reports the deposition of n-type Al-doped MgxZn1-xO (AMZO) films on p-GaN using a radio-frequency (RF) magnetron sputtering system followed by annealing at 700, 800, 900, and 1000 °C in a nitrogen ambient for 60 seconds, respectively. The AMZO/GaN films were thereafter analyzed using Hall measurement and the x-ray diffraction (XRD) patterns. The XRD results show that the diffraction angles of the annealed AMZO films remain the same as that of GaN without shifting. The n-AMZO/p-GaN diode with 900 °C annealing had the lowest leakage current in forward and reverse bias. However, the leakage current of the diodes did not change significantly with an increase in annealing temperatures. These findings show that the n-AMZO/p-GaN junction diode is feasible for GaN-based heterojunction bipolar transistors (HBTs) and UV light-emitting diodes (LEDs).

TRPV2 expression in rat oral mucosa.

PubMed

Shimohira, Daiji; Kido, Mizuho A; Danjo, Atsushi; Takao, Tomoka; Wang, Bing; Zhang, Jing-Qi; Yamaza, Takayoshi; Masuko, Sadahiko; Goto, Masaaki; Tanaka, Teruo

2009-10-01

The oral mucosa is a highly specialised, stratified epithelium that confers protection from infection and physical, chemical and thermal stimuli. The non-keratinised junctional epithelium surrounds each tooth like a collar and is easily attacked by foreign substances from the oral sulcus. We found that TRPV2, a temperature-gated channel, is highly expressed in junctional epithelial cells, but not in oral sulcular epithelial cells or oral epithelial cells. Dual or triple immunolabelling with immunocompetent cell markers also revealed TRPV2 expression in Langerhans cells and in dendritic cells and macrophages. Electron microscopy disclosed TRPV2 immunoreactivity in the unmyelinated and thinly myelinated axons within the connective tissue underlying the epithelium. TRPV2 labelling was also observed in venule endothelial cells. The electron-dense immunoreaction in junctional epithelial cells, macrophages and neural axons occurred on the plasma membrane, on invaginations of the plasma membrane and in vesicular structures. Because TRPV2 has been shown to respond to temperature, hypotonicity and mechanical stimuli, gingival cells expressing TRPV2 may act as sensor cells, detecting changes in the physical and chemical environment, and may play a role in subsequent defence mechanisms.

Current-voltage scaling of a Josephson-junction array at irrational frustration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Granato, E.

1996-10-01

Numerical simulations of the current-voltage characteristics of an ordered two-dimensional Josephson-junction array at an irrational flux quantum per plaquette are presented. The results are consistent with a scaling analysis that assumes a zero-temperature vortex-glass transition. The thermal-correlation length exponent characterizing this transition is found to be significantly different from the corresponding value for vortex-glass models in disordered two-dimensional superconductors. This leads to a current scale where nonlinearities appear in the current-voltage characteristics decreasing with temperature {ital T} roughly as {ital T}{sup 2} in contrast with the {ital T}{sup 3} behavior expected for disordered models. {copyright} {ital 1996 The American Physicalmore » Society.}« less

Thermoacoustic couple

DOEpatents

Wheatley, J.C.; Swift, G.W.; Migliori, A.

1983-10-04

An apparatus and method for determining acoustic power density level and its direction in a fluid using a single sensor are disclosed. The preferred embodiment of the apparatus, which is termed a thermoacoustic couple, consists of a stack of thin, spaced apart polymeric plates, selected ones of which include multiple bimetallic thermocouple junctions positioned along opposite end edges thereof. The thermocouple junctions are connected in series in the nature of a thermopile, and are arranged so as to be responsive to small temperature differences between the opposite edges of the plates. The magnitude of the temperature difference, as represented by the magnitude of the electrical potential difference generated by the thermopile, is found to be directly related to the level of acoustic power density in the gas.

Performance enhancement of Ge-on-Insulator tunneling FETs with source junctions formed by low-energy BF2 ion implantation

NASA Astrophysics Data System (ADS)

Katoh, Takumi; Matsumura, Ryo; Takaguchi, Ryotaro; Takenaka, Mitsuru; Takagi, Shinichi

2018-04-01

To clarify the process of formation of source regions of high-performance Ge n-channel tunneling field-effect transistors (TFETs), p+-n junctions formed by low-energy ion implantation (I/I) of BF2 atoms are characterized. Here, the formation of p+-n junctions with steep B profiles and low junction leakage is a key issue. The steepness of 5.7 nm/dec in profiles of B implanted into Ge is obtained for BF2 I/I at 3 keV with a dose of 4 × 1014 cm-2. Ge-on-insulator (GOI) n-TFETs with the source tunnel junctions formed by low-energy B and BF2 I/I are fabricated on GOI substrates and the device operation is confirmed. Although the performance at room temperature is significantly degraded by the source junction leakage current, an I on/I off ratio of 105 and the minimum sub-threshold swing (S.S.) of 130 mV/dec are obtained at 10 K. It is found that GOI n-TFETs with steeper B profiles formed by BF2 I/I have led to higher on current and a lower sub-threshold slope, demonstrating the effectiveness of steep B profiles in enhancing the GOI TFET performance.

Controlling the thermoelectric effect by mechanical manipulation of the electron's quantum phase in atomic junctions.

PubMed

Aiba, Akira; Demir, Firuz; Kaneko, Satoshi; Fujii, Shintaro; Nishino, Tomoaki; Tsukagoshi, Kazuhito; Saffarzadeh, Alireza; Kirczenow, George; Kiguchi, Manabu

2017-08-11

The thermoelectric voltage developed across an atomic metal junction (i.e., a nanostructure in which one or a few atoms connect two metal electrodes) in response to a temperature difference between the electrodes, results from the quantum interference of electrons that pass through the junction multiple times after being scattered by the surrounding defects. Here we report successfully tuning this quantum interference and thus controlling the magnitude and sign of the thermoelectric voltage by applying a mechanical force that deforms the junction. The observed switching of the thermoelectric voltage is reversible and can be cycled many times. Our ab initio and semi-empirical calculations elucidate the detailed mechanism by which the quantum interference is tuned. We show that the applied strain alters the quantum phases of electrons passing through the narrowest part of the junction and hence modifies the electronic quantum interference in the device. Tuning the quantum interference causes the energies of electronic transport resonances to shift, which affects the thermoelectric voltage. These experimental and theoretical studies reveal that Au atomic junctions can be made to exhibit both positive and negative thermoelectric voltages on demand, and demonstrate the importance and tunability of the quantum interference effect in the atomic-scale metal nanostructures.

A Metal-Free Regioselective Multicomponent Approach for the Synthesis of Free Radical Scavenging Pyrimido-Fused Indazoles and Their Fluorescence Studies.

PubMed

Palaniraja, Jeyakannu; Mohana Roopan, Selvaraj; Mokesh Rayalu, G; Abdullah Al-Dhabi, Naif; Valan Arasu, Mariadhas

2016-11-18

This study deals with a new and efficient metal-free regioselective synthesis of pyrimido-fused indazoles with nitrogen ring junction motifs. We have developed a metal-free domino type reaction between 3-aminoindazole, aryl aldehydes and aceotophenones in the presence of KOH/DMF that leads to pyrimido[1,2- b ]indazole analogues. Response Surface Methodology (RSM) coupled with a Box-Behnken design (BBD) were utilized for exploring the effect of base used (A), temperature of reaction (B) and (C), reaction time. This approach can allow access to a variety of pyrimidoindazole fluorophores and related compounds. The compound N,N -dimethyl-4-(2-phenylpyrimido[1,2- b ]indazol-4-yl)aniline ( 4e ) displays the maximum fluorescence intensity at 518 nm and shows a fluorescence quantum yield of 0.068. The synthesized pyramido-fused indazoles have been evaluated for their free radical scavenging activity and compound 4f showed good antioxidant activity.

Prediction of 4H-SiC betavoltaic microbattery characteristics based on practical Ni-63 sources.

PubMed

Gui, Gui; Zhang, Kan; Blanchard, James P; Ma, Zhenqiang

2016-01-01

We have investigated the performance of 4H-SiC betavoltaic microbatteries under exposure to the practical Ni-63 sources using the Monte Carlo method and Synopsys® Medici device simulator. A typical planar p-n junction betavoltaic device with the Ni-63 source of 20% purity on top is modeled in the simulation. The p-n junction structure includes a p+ layer, a p- layer, an n+ layer, and an n- layer. In order to obtain an accurate and valid predication, our simulations consider several practical factors, including isotope impurities, self-absorption, and full beta energy spectra. By simulating the effects of both the p-n junction configuration and the isotope source thickness on the battery output performance, we have achieved the optimal design of the device and maximum energy conversion efficiency. Our simulation results show that the energy conversion efficiency increases as the doping concentration and thickness of the p- layer increase, whereas it is independent of the total depth of the p-n junction. Furthermore, the energy conversion efficiency decreases as the thickness of the practical Ni-63 source increases, because of self-absorption in the isotope source. Therefore, we propose that a p-n junction betavoltaic cell with a thicker and heavily doped p- layer under exposure to a practical Ni-63 source with an appreciable thickness could produce the optimal energy conversion efficiency. Copyright © 2015 Elsevier Ltd. All rights reserved.

Josephson junctions of multiple superconducting wires

NASA Astrophysics Data System (ADS)

Deb, Oindrila; Sengupta, K.; Sen, Diptiman

2018-05-01

We study the spectrum of Andreev bound states and Josephson currents across a junction of N superconducting wires which may have s - or p -wave pairing symmetries and develop a scattering matrix based formalism which allows us to address transport across such junctions. For N ≥3 , it is well known that Berry curvature terms contribute to the Josephson currents; we chart out situations where such terms can have relatively large effects. For a system of three s -wave or three p -wave superconductors, we provide analytic expressions for the Andreev bound-state energies and study the Josephson currents in response to a constant voltage applied across one of the wires; we find that the integrated transconductance at zero temperature is quantized to integer multiples of 4 e2/h , where e is the electron charge and h =2 π ℏ is Planck's constant. For a sinusoidal current with frequency ω applied across one of the wires in the junction, we find that Shapiro plateaus appear in the time-averaged voltage across that wire for any rational fractional multiple (in contrast to only integer multiples in junctions of two wires) of 2 e /(ℏ ω ) . We also use our formalism to study junctions of two p -wave and one s -wave wires. We find that the corresponding Andreev bound-state energies depend on the spin of the Bogoliubov quasiparticles; this produces a net magnetic moment in such junctions. The time variation of these magnetic moments may be controlled by an external voltage applied across the junction. We discuss experiments which may test our theory.

Magnetic tunnel junctions utilizing diamond-like carbon tunnel barriers

NASA Astrophysics Data System (ADS)

Cadieu, F. J.; Chen, Li; Li, Biao

2002-05-01

We have devised a method whereby thin particulate-free diamond-like carbon films can be made with good adhesion onto even room-temperature substrates. The method employs a filtered ionized carbon beam created by the vacuum impact of a high-energy, approximately 1 J per pulse, 248 nm excimer laser onto a carbon target. The resultant deposition beam can be steered and deflected by magnetic and electric fields to paint a specific substrate area. An important aspect of this deposition method is that the resultant films are particulate free and formed only as the result of atomic species impact. The vast majority of magnetic tunnel junctions utilizing thin metallic magnetic films have employed a thin oxidized layer of aluminum to form the tunnel barrier. This has presented reproducibility problems because the indicated optimal barrier thickness is only approximately 13 Å thick. Magnetic tunnel junctions utilizing Co and permalloy films made by evaporation and sputtering have been fabricated with an intervening diamond-like carbon tunnel barrier. The diamond-like carbon thickness profile has been tapered so that seven junctions with different barrier thickness can be formed at once. Magnetoresistive (MR) measurements made between successive permalloy strip ends include contributions from two junctions and from the permalloy and Co strips that act as current leads to the junctions. Magnetic tunnel junctions with thicker carbon barriers exhibit MR effects that are dominated by that of the permalloy strips. Since these tunnel barriers are formed without the need for oxygen, complete tunnel junctions can be formed with all high-vacuum processing.

Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor deposition

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Larkin, David J.; Starr, Jonathan E.; Powell, J. A.; Salupo, Carl S.; Matus, Lawrence G.

1993-01-01

This paper reports the fabrication and initial electrical characterization of greatly improved 3C-SiC (beta-SiC) p-n junction diodes. These diodes, which were grown on commercially available 6H-SiC substrates by chemical vapor deposition, demonstrate rectification to -200 V at room temperature, representing a fourfold improvement in reported 3C-SiC diode blocking voltage. The reverse leakage currents and saturation current densities measured on these diodes also show significant improvement compared to previously reported 3C-SiC p-n junction diodes. When placed under sufficient forward bias, the diodes emit significantly bright green-yellow light. These results should lead to substantial advancements in 3C-SiC transistor performance.

Pb/InAs nanowire josephson junction with high critical current and magnetic flux focusing.

PubMed

Paajaste, J; Amado, M; Roddaro, S; Bergeret, F S; Ercolani, D; Sorba, L; Giazotto, F

2015-03-11

We have studied mesoscopic Josephson junctions formed by highly n-doped InAs nanowires and superconducting Ti/Pb source and drain leads. The current-voltage properties of the system are investigated by varying temperature and external out-of-plane magnetic field. Superconductivity in the Pb electrodes persists up to ∼7 K and with magnetic field values up to 0.4 T. Josephson coupling at zero backgate voltage is observed up to 4.5 K and the critical current is measured to be as high as 615 nA. The supercurrent suppression as a function of the magnetic field reveals a diffraction pattern that is explained by a strong magnetic flux focusing provided by the superconducting electrodes forming the junction.

Demonstration of an ac Josephson junction laser

NASA Astrophysics Data System (ADS)

Cassidy, M. C.; Bruno, A.; Rubbert, S.; Irfan, M.; Kammhuber, J.; Schouten, R. N.; Akhmerov, A. R.; Kouwenhoven, L. P.

2017-03-01

Superconducting electronic devices have reemerged as contenders for both classical and quantum computing due to their fast operation speeds, low dissipation, and long coherence times. An ultimate demonstration of coherence is lasing. We use one of the fundamental aspects of superconductivity, the ac Josephson effect, to demonstrate a laser made from a Josephson junction strongly coupled to a multimode superconducting cavity. A dc voltage bias applied across the junction provides a source of microwave photons, and the circuit’s nonlinearity allows for efficient down-conversion of higher-order Josephson frequencies to the cavity’s fundamental mode. The simple fabrication and operation allows for easy integration with a range of quantum devices, allowing for efficient on-chip generation of coherent microwave photons at low temperatures.

Position sensitive detection of nuclear radiation mediated by non equilibrium phonons at low temperatures

NASA Astrophysics Data System (ADS)

Pröbst, F.; Peterreins, Th.; Feilitzsch, F. v.; Kraus, H.

1990-03-01

Many experiments in nuclear and particle physics would benefit from the development of a device capable of detecting non-ionizing events with a low energy threshold. In this context, we report on experimental tests of a detector based on the registration of nonequilibrium phonons. The device is composed of a silicon single crystal (size: 20×10×3 mm 3) and of an array of superconducting tunnel junctions evaporated onto the surface of the crystal. The junctions serve as sensors for phonons created by absorption of nuclear radiation in the crystal. We show how pulse height analysis and the investigation of time differences between correlated pulses in different junctions can be used to obtain information about the point of absorption.

Transport properties and device-design of Z-shaped MoS2 nanoribbon planar junctions

NASA Astrophysics Data System (ADS)

Zhang, Hua; Zhou, Wenzhe; Liu, Qi; Yang, Zhixiong; Pan, Jiangling; Ouyang, Fangping; Xu, Hui

2017-09-01

Based on MoS2 nanoribbons, metal-semiconductor-metal planar junction devices were constructed. The electronic and transport properties of the devices were studied by using density function theory (DFT) and nonequilibrium Green's functions (NEGF). It is found that a band gap about 0.4 eV occurs in the planar junction. The electron and hole transmissions of the devices are mainly contributed by the Mo atomic orbitals. The electron transport channel is located at the edge of armchair MoS2 nanoribbon, while the hole transport channel is delocalized in the channel region. The I-V curve of the two-probe device shows typical transport behavior of Schottky barrier, and the threshold voltage is of about 0.2 V. The field effect transistors (FET) based on the planar junction turn out to be good bipolar transistors, the maximum current on/off ratio can reach up to 1 × 104, and the subthreshold swing is 243 mV/dec. It is found that the off-state current is dependent on the length and width of the channel, while the on-state current is almost unaffected. The switching performance of the FET is improved with increasing the length of the channel, and shows oscillation behavior with the change of the channel width.

The effects of octanol on penicillin induced epileptiform activity in rats: an in vivo study.

PubMed

Bostanci, M Omer; Bağirici, Faruk

2006-10-01

The common features of all types of epilepsy are the synchronized and uncontrolled discharges of nerve cell assemblies. The reason for the pathologically synchronized discharges of the neuron is not exactly known yet. Recent reports claim that gap junctions have a critical role in neuronal synchronization. The present study was planned to investigate the effects of octanol, a gap junction blocker, on penicillin-induced experimental epilepsy. Permanent screw electrodes allowing EEG monitoring from conscious animals and permanent cannula providing the administration of the substances to the brain ventricle were placed into the cranium of rats under general anesthesia. After the postoperative recovery period, epileptiform activity was generated by injecting 300 IU crystallized penicillin through the ventricular cannula. When epileptiform activity, monitored from a digital recording system, reached at its maximum intensity, octanol was applied in the same way as penicillin administered. Application of octanol caused an inhibition in the epileptiform activity. Vehicle solution alone did not affect the epileptiform activity. Results of this study suggest that the blockade of electrical synapses may contribute to the prevention and amelioration of epileptic activity. Production of gap junction blockers selective for connexin types is needed. Further studies on the differential roles of gap junctions on certain epileptiform activities are required.

Phase 2 design study of the electronic assembly for the HRUV spectrometer/polarimeter intended for the solar maximum mission. Implementation phase program plan, revision A

NASA Technical Reports Server (NTRS)

1977-01-01

The primary function of the implementation phase is to convert the ERA design of the design study phase into deliverable flight hardware. The development aspects of the experiment logic unit, the dual power converter, the junction box and the cables are considered.

Mechanisms of Current Flow in the Diode Structure with an n + - p-Junction Formed by Thermal Diffusion of Phosphorus From Porous Silicon Film

NASA Astrophysics Data System (ADS)

Tregulov, V. V.; Litvinov, V. G.; Ermachikhin, A. V.

2018-01-01

Temperature dependences of current-voltage characteristics of the photoelectric converter with an antireflective film of porous silicon and an n + -p-junction formed by thermal diffusion of phosphorus from a porous film is studied. The porous silicon film was saturated with phosphorus during its growing by electrochemical method. It is shown that the current flow processes in the structure under study are significantly influenced by traps.

Dependence of Noise in Magnetic Tunnel Junctions Sensors on Annealing Field and Temperature

DTIC Science & Technology

2008-03-07

and can be characterized by Hooge’s formula,11,12 Sf = HVs 2 NAf , where H is the material-specific Hooge parameter , A is the junction area, and...noise floor at low frequency in the future. Figure 5 shows the fitting of the noise spectra, which provides values for the Hooge parameter H for the...environment. © 2008 American Institute of Physics. DOI: 10.1063/1.2837659 I. INTRODUCTION Sensor noise is a crucial parameter in low-field applica- tions

On-wire lithography-generated molecule-based transport junctions: a new testbed for molecular electronics.

PubMed

Chen, Xiaodong; Jeon, You-Moon; Jang, Jae-Won; Qin, Lidong; Huo, Fengwei; Wei, Wei; Mirkin, Chad A

2008-07-02

On-wire lithography (OWL) fabricated nanogaps are used as a new testbed to construct molecular transport junctions (MTJs) through the assembly of thiolated molecular wires across a nanogap formed between two Au electrodes. In addition, we show that one can use OWL to rapidly characterize a MTJ and optimize gap size for two molecular wires of different dimensions. Finally, we have used this new testbed to identify unusual temperature-dependent transport mechanisms for alpha,omega-dithiol terminated oligo(phenylene ethynylene).

Phase-locking transition in a chirped superconducting Josephson resonator.

PubMed

Naaman, O; Aumentado, J; Friedland, L; Wurtele, J S; Siddiqi, I

2008-09-12

We observe a sharp threshold for dynamic phase locking in a high-Q transmission line resonator embedded with a Josephson tunnel junction, and driven with a purely ac, chirped microwave signal. When the drive amplitude is below a critical value, which depends on the chirp rate and is sensitive to the junction critical current I0, the resonator is only excited near its linear resonance frequency. For a larger amplitude, the resonator phase locks to the chirped drive and its amplitude grows until a deterministic maximum is reached. Near threshold, the oscillator evolves smoothly in one of two diverging trajectories, providing a way to discriminate small changes in I0 with a nonswitching detector, with potential applications in quantum state measurement.

GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Lee, SeungGeun; Forman, Charles A.; Lee, Changmin; Kearns, Jared; Young, Erin C.; Leonard, John T.; Cohen, Daniel A.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

2018-06-01

We report the first demonstration of III–nitride vertical-cavity surface-emitting lasers (VCSELs) with tunnel junction (TJ) intracavity contacts grown completely by metal–organic chemical vapor deposition (MOCVD). For the TJs, n++-GaN was grown on in-situ activated p++-GaN after buffered HF surface treatment. The electrical properties and epitaxial morphologies of the TJs were first investigated on TJ LED test samples. A VCSEL with a TJ intracavity contact showed a lasing wavelength of 408 nm, a threshold current of ∼15 mA (10 kA/cm2), a threshold voltage of 7.8 V, a maximum output power of 319 µW, and a differential efficiency of 0.28%.

Work function and temperature dependence of electron tunneling through an N-type perylene diimide molecular junction with isocyanide surface linkers.

PubMed

Smith, Christopher E; Xie, Zuoti; Bâldea, Ioan; Frisbie, C Daniel

2018-01-18

Conducting probe atomic force microscopy (CP-AFM) was employed to examine electron tunneling in self-assembled monolayer (SAM) junctions. A 2.3 nm long perylene tetracarboxylic acid diimide (PDI) acceptor molecule equipped with isocyanide linker groups was synthesized, adsorbed onto Ag, Au and Pt substrates, and the current-voltage (I-V) properties were measured by CP-AFM. The dependence of the low-bias resistance (R) on contact work function indicates that transport is LUMO-assisted ('n-type behavior'). A single-level tunneling model combined with transition voltage spectroscopy (TVS) was employed to analyze the experimental I-V curves and to extract the effective LUMO position ε l = E LUMO - E F and the effective electronic coupling (Γ) between the PDI redox core and the contacts. This analysis revealed a strong Fermi level (E F ) pinning effect in all the junctions, likely due to interface dipoles that significantly increased with increasing contact work function, as revealed by scanning Kelvin probe microscopy (SKPM). Furthermore, the temperature (T) dependence of R was found to be substantial. For Pt/Pt junctions, R varied more than two orders of magnitude in the range 248 K < T < 338 K. Importantly, the R(T) data are consistent with a single step electron tunneling mechanism and allow independent determination of ε l , giving values compatible with estimates of ε l based on analysis of the full I-V data. Theoretical analysis revealed a general criterion to unambiguously rule out a two-step transport mechanism: namely, if measured resistance data exhibit a pronounced Arrhenius-type temperature dependence, a two-step electron transfer scenario should be excluded in cases where the activation energy depends on contact metallurgy. Overall, our results indicate (1) the generality of the Fermi level pinning phenomenon in molecular junctions, (2) the utility of employing the single level tunneling model for determining essential electronic structure parameters (ε l and Γ), and (3) the importance of changing the nature of the contacts to verify transport mechanisms.

Space Power Free-Piston Stirling Engine Scaling Study

NASA Technical Reports Server (NTRS)

Jones, D.

1989-01-01

The design feasibility study is documented of a single cylinder, free piston Stirling engine/linear alternator (FPSE/LA) power module generating 150 kW-electric (kW sub e), and the determination of the module's maximum feasible power level. The power module configuration was specified to be a single cylinder (single piston, single displacer) FPSE/LA, with tuning capacitors if required. The design requirements were as follows: (1) Maximum electrical power output; (2) Power module thermal efficiency equal to or greater than 20 percent at a specific mass of 5 to 8 kg/kW(sub e); (3) Heater wall temperature/cooler wall temperature = 1050 K/525 K; (4) Sodium heat-pipe heat transport system, pumped loop NaK (sodium-potassium eutectic mixture) rejection system; (5) Maximum power module vibration amplitude = 0.0038 cm; and (6) Design life = 7 years (60,000 hr). The results show that a single cylinder FPSE/LA is capable of meeting program goals and has attractive scaling attributes over the power range from 25 to 150 kW(sub e). Scaling beyond the 150 kW(sub e) power level, the power module efficiency falls and the power module specific mass reaches 10 kg/kW(sub e) at a power output of 500 kW(sub e). A discussion of scaling rules for the engine, alternator, and heat transport systems is presented, along with a detailed description of the conceptual design of a 150 kW(sub e) power module that meets the requirements. Included is a discussion of the design of a dynamic balance system. A parametric study of power module performance conducted over the power output range of 25 to 150 kW(sub e) for temperature ratios of 1.7, 2.0, 2.5, and 3.0 is presented and discussed. The results show that as the temperature ratio decreases, the efficiency falls and specific mass increases. At a temperature ratio of 1.7, the 150 kW(sub e) power module cannot satisfy both efficiency and specific mass goals. As the power level increases from 25 to 150 kW(sub e) at a fixed temperature ratio, power module efficiency is seen to increase slightly, but at the expense of increased specific mass. An empirical equation relating power module thermal efficiency as a function of power module specific mass, power output, and temperature ratio is developed. Alternative configurations to the single cylinder, direct coupled linear alternator approach are also evaluated, but are shown to have technical drawbacks that lessen their attractiveness. The dynamic balance assembly mass (moving mass and structure) represents 20 to 30 percent of the total single cylinder power module mass. Joining two modules in a balanced opposed configuration eliminates the need for the balancer, and a hot end junction can be made without significant addition of structural mass. Recommendations are made for evaluation of advanced heat pipe concepts, tests of radial flow heat exchangers, and evaluation of high temperature alternator materials.

Laboratory instrumentation and techniques for characterizing multi-junction solar cells for space applications

NASA Technical Reports Server (NTRS)

Woodyard, James R.

1995-01-01

Multi-junction solar cells are attractive for space applications because they can be designed to convert a larger fraction of AMO into electrical power at a lower cost than single-junction cells. The performance of multi-junction cells is much more sensitive to the spectral irradiance of the illuminating source than single-junction cells. The design of high efficiency multi-junction cells for space applications requires matching the optoelectronic properties of the junctions to AMO spectral irradiance. Unlike single-junction cells, it is not possible to carry out quantum efficiency measurements using only a monochromatic probe beam and determining the cell short-circuit current assuming linearity of the quantum efficiency. Additionally, current-voltage characteristics can not be calculated from measurements under non-AMO light sources using spectral-correction methods. There are reports in the literature on characterizing the performance of multi junction cells by measuring and convoluting the quantum efficiency of each junction with the spectral irradiance; the technique is of limited value for the characterization of cell performance under AMO power-generating conditions. We report the results of research to develop instrumentation and techniques for characterizing multi junction solar cells for space . An integrated system is described which consists of a standard lamp, spectral radiometer, dual-source solar simulator, and personal computer based current-voltage and quantum efficiency equipment. The spectral radiometer is calibrated regularly using the tungsten-halogen standard lamp which has a calibration based on NIST scales. The solar simulator produces the light bias beam for current-voltage and cell quantum efficiency measurements. The calibrated spectral radiometer is used to 'fit' the spectral irradiance of the dual-source solar simulator to WRL AMO data. The quantum efficiency apparatus includes a monochromatic probe beam for measuring the absolute cell quantum efficiency at various voltage biases, including the voltage bias corresponding to the maximum-power point under AMO light bias. The details of the procedures to 'fit' the spectral irradiance to AMO will be discussed. An assessment of the role of the accuracy of the 'fit' of the spectral irradiance and probe beam intensity on measured cell characteristics will be presented. quantum efficiencies were measured with both spectral light bias and AMO light bias; the measurements show striking differences. Spectral irradiances were convoluted with cell quantum efficiencies to calculate cell currents as function of voltage. The calculated currents compare with measured currents at the 1% level. Measurements on a variety of multi-junction cells will be presented. The dependence of defects in junctions on cell quantum efficiencies measured under light and voltage bias conditions will be presented. Comments will be made on issues related to standards for calibration, and limitations of the instrumentation and techniques. Expeditious development of multi-junction solar cell technology for space presents challenges for cell characterization in the laboratory.

Low noise charge sensitive preamplifier DC stabilized without a physical resistor

DOEpatents

Bertuccio, Giuseppe; Rehak, Pavel; Xi, Deming

1994-09-13

The invention is a novel charge sensitive preamplifier (CSP) which has no resistor in parallel with the feedback capacitor. No resetting circuit is required to discharge the feedback capacitor. The DC stabilization of the preamplifier is obtained by means of a second feedback loop between the preamplifier output and the common base transistor of the input cascode. The input transistor of the preamplifier is a Junction Field Transistor (JFET) with the gate-source junction forward biased. The detector leakage current flows into this junction. This invention is concerned with a new circuit configuration for a charge sensitive preamplifier and a novel use of the input Field Effect Transistor of the CSP itself. In particular this invention, in addition to eliminating the feedback resistor, eliminates the need for external devices between the detector and the preamplifier, and it eliminates the need for external circuitry to sense the output voltage and reset the CSP. Furthermore, the noise level of the novel CSP is very low, comparable with the performance achieved with other solutions. Experimental tests prove that this configuration for the charge sensitive preamplifier permits an excellent noise performance at temperatures including room temperature. An equivalent noise charge of less than 20 electrons r.m.s. has been measured at room temperature by using a commercial JFET as input device of the preamplifier.

Low noise charge sensitive preamplifier DC stabilized without a physical resistor

DOEpatents

Bertuccio, G.; Rehak, P.; Xi, D.

1994-09-13

The invention is a novel charge sensitive preamplifier (CSP) which has no resistor in parallel with the feedback capacitor. No resetting circuit is required to discharge the feedback capacitor. The DC stabilization of the preamplifier is obtained by means of a second feedback loop between the preamplifier output and the common base transistor of the input cascode. The input transistor of the preamplifier is a Junction Field Transistor (JFET) with the gate-source junction forward biased. The detector leakage current flows into this junction. This invention is concerned with a new circuit configuration for a charge sensitive preamplifier and a novel use of the input Field Effect Transistor of the CSP itself. In particular this invention, in addition to eliminating the feedback resistor, eliminates the need for external devices between the detector and the preamplifier, and it eliminates the need for external circuitry to sense the output voltage and reset the CSP. Furthermore, the noise level of the novel CSP is very low, comparable with the performance achieved with other solutions. Experimental tests prove that this configuration for the charge sensitive preamplifier permits an excellent noise performance at temperatures including room temperature. An equivalent noise charge of less than 20 electrons r.m.s. has been measured at room temperature by using a commercial JFET as input device of the preamplifier. 6 figs.

Electrical transport across nanometric SrTiO3 and BaTiO3 barriers in conducting/insulator/conducting junctions

NASA Astrophysics Data System (ADS)

Navarro, H.; Sirena, M.; González Sutter, J.; Troiani, H. E.; del Corro, P. G.; Granell, P.; Golmar, F.; Haberkorn, N.

2018-01-01

We report the electrical transport properties of conducting/insulator/conducting heterostructures by studying current-voltage IV curves at room temperature. The measurements were obtained on tunnel junctions with different areas (900, 400 and 100 μm2) using a conducting atomic force microscope. Trilayers with GdBa2Cu3O7 (GBCO) as the bottom electrode, SrTiO3 or BaTiO3 (thicknesses between 1.6 and 4 nm) as the insulator barrier, and GBCO or Nb as the top electrode were grown by DC sputtering on (100) SrTiO3 substrates For SrTiO3 and BaTiO3 barriers, asymmetric IV curves at positive and negative polarization can be obtained using electrodes with different work function. In addition, hysteretic IV curves are obtained for BaTiO3 barriers, which can be ascribed to a combined effect of the FE reversal switching polarization and an oxygen vacancy migration. For GBCO/BaTiO3/GBCO heterostructures, the IV curves correspond to that expected for asymmetric interfaces, which indicates that the disorder affects differently the properties at the bottom and top interfaces. Our results show the role of the interface disorder on the electrical transport of conducting/insulator/conduction heterostructures, which is relevant for different applications, going from resistive switching memories (at room temperature) to Josephson junctions (at low temperatures).

Improved Treatment of Photothermal Cancer by Coating TiO2 on Porous Silicon.

PubMed

Na, Kil Ju; Park, Gye-Choon

2016-02-01

In present society, the technology in various field has been sharply developed and advanced. In medical technology, especially, photothermal therapy and photodynamic therapy have had limelight for curing cancers and diseases. The study investigates the photothermal therapy that reduces side effects of existing cancer treatment, is applied to only cancer cells, and dose not harm any other normal cells. The photothermal properties of porous silicon for therapy are analyzed in order to destroy cancer cells that are more weak at heat than normal ones. For improving performance of porous silicon, it also analyzes the properties when irradiating the near infrared by heterologously junction TiO2 and TiO2NW, photocatalysts that are very stable and harmless to the environment and the human body, to porous silicon. Each sample of Si, PSi, TiO2/Psi, and TiO2NW/PSi was irradiated with 808 nm near-IR of 300, 500, and 700 mW/cm2 light intensity, where the maximum heating temperature was 43.8, 61.6, 67.9, and 61.9 degrees C at 300 mW/cm2; 54.1, 64.3, 78.8, and 68.9 degrees C at 500 mW/cm2; and 97.3, 102.8, 102.5, and 95 0C at 700 mW/cm2. The time required to reach the maximum temperature was less than 10 min for every case. The results indicate that TiO2/PSi thin film irradiated with a single near-infrared wavelength of 808 nm, which is known to have the best human permeability, offers the potential of being the most successful photothermal cancer therapy agent. It maximizes the photo-thermal characteristics within the shortest time, and minimizes the adverse effects on the human body.

Strong Electron Self-Cooling in the Cold-Electron Bolometers Designed for CMB Measurements

NASA Astrophysics Data System (ADS)

Kuzmin, L. S.; Pankratov, A. L.; Gordeeva, A. V.; Zbrozhek, V. O.; Revin, L. S.; Shamporov, V. A.; Masi, S.; de Bernardis, P.

2018-03-01

We have realized cold-electron bolometers (CEB) with direct electron self-cooling of the nanoabsorber by SIN (Superconductor-Insulator-Normal metal) tunnel junctions. This electron self-cooling acts as a strong negative electrothermal feedback, improving noise and dynamic properties. Due to this cooling the photon-noise-limited operation of CEBs was realized in array of bolometers developed for the 345 GHz channel of the OLIMPO Balloon Telescope in the power range from 10 pW to 20 pW at phonon temperature Tph =310 mK. The negative electrothermal feedback in CEB is analogous to TES but instead of artificial heating we use cooling of the absorber. The high efficiency of the electron self-cooling to Te =100 mK without power load and to Te=160 mK under power load is achieved by: - a very small volume of the nanoabsorber (0.02 μm3) and a large area of the SIN tunnel junctions, - effective removal of hot quasiparticles by arranging double stock at both sides of the junctions and close position of the normal metal traps, - self-protection of the 2D array of CEBs against interferences by dividing them between N series CEBs (for voltage interferences) and M parallel CEBs (for current interferences), - suppression of Andreev reflection by a thin layer of Fe in the AlFe absorber. As a result even under high power load the CEBs are working at electron temperature Te less than Tph . To our knowledge, there is no analogue in the bolometers technology in the world for bolometers working at electron temperature colder than phonon temperature.

Phase-Defined van der Waals Schottky Junctions with Significantly Enhanced Thermoelectric Properties.

PubMed

Wang, Qiaoming; Yang, Liangliang; Zhou, Shengwen; Ye, Xianjun; Wang, Zhe; Zhu, Wenguang; McCluskey, Matthew D; Gu, Yi

2017-07-06

We demonstrate a van der Waals Schottky junction defined by crystalline phases of multilayer In 2 Se 3 . Besides ideal diode behaviors and the gate-tunable current rectification, the thermoelectric power is significantly enhanced in these junctions by more than three orders of magnitude compared with single-phase multilayer In 2 Se 3 , with the thermoelectric figure-of-merit approaching ∼1 at room temperature. Our results suggest that these significantly improved thermoelectric properties are not due to the 2D quantum confinement effects but instead are a consequence of the Schottky barrier at the junction interface, which leads to hot carrier transport and shifts the balance between thermally and field-driven currents. This "bulk" effect extends the advantages of van der Waals materials beyond the few-layer limit. Adopting such an approach of using energy barriers between van der Waals materials, where the interface states are minimal, is expected to enhance the thermoelectric performance in other 2D materials as well.

Microscopic theory of the Coulomb based exchange coupling in magnetic tunnel junctions.

PubMed

Udalov, O G; Beloborodov, I S

2017-05-04

We study interlayer exchange coupling based on the many-body Coulomb interaction between conduction electrons in magnetic tunnel junction. This mechanism complements the known interaction between magnetic layers based on virtual electron hopping (or spin currents). We find that these two mechanisms have different behavior on system parameters. The Coulomb based coupling may exceed the hopping based exchange. We show that the Coulomb based exchange interaction, in contrast to the hopping based coupling, depends strongly on the dielectric constant of the insulating layer. The dependence of the interlayer exchange interaction on the dielectric properties of the insulating layer in magnetic tunnel junction is similar to magneto-electric effect where electric and magnetic degrees of freedom are coupled. We calculate the interlayer coupling as a function of temperature and electric field for magnetic tunnel junction with ferroelectric layer and show that the exchange interaction between magnetic leads has a sharp decrease in the vicinity of the ferroelectric phase transition and varies strongly with external electric field.

Kondo blockade due to quantum interference in single-molecule junctions

PubMed Central

Mitchell, Andrew K.; Pedersen, Kim G. L.; Hedegård, Per; Paaske, Jens

2017-01-01

Molecular electronics offers unique scientific and technological possibilities, resulting from both the nanometre scale of the devices and their reproducible chemical complexity. Two fundamental yet different effects, with no classical analogue, have been demonstrated experimentally in single-molecule junctions: quantum interference due to competing electron transport pathways, and the Kondo effect due to entanglement from strong electronic interactions. Here we unify these phenomena, showing that transport through a spin-degenerate molecule can be either enhanced or blocked by Kondo correlations, depending on molecular structure, contacting geometry and applied gate voltages. An exact framework is developed, in terms of which the quantum interference properties of interacting molecular junctions can be systematically studied and understood. We prove that an exact Kondo-mediated conductance node results from destructive interference in exchange-cotunneling. Nonstandard temperature dependences and gate-tunable conductance peaks/nodes are demonstrated for prototypical molecular junctions, illustrating the intricate interplay of quantum effects beyond the single-orbital paradigm. PMID:28492236

Binding configurations and intramolecular strain in single-molecule devices.

PubMed

Rascón-Ramos, Habid; Artés, Juan Manuel; Li, Yuanhui; Hihath, Joshua

2015-05-01

The development of molecular-scale electronic devices has made considerable progress over the past decade, and single-molecule transistors, diodes and wires have all been demonstrated. Despite this remarkable progress, the agreement between theoretically predicted conductance values and those measured experimentally remains limited. One of the primary reasons for these discrepancies lies in the difficulty to experimentally determine the contact geometry and binding configuration of a single-molecule junction. In this Article, we apply a small-amplitude, high-frequency, sinusoidal mechanical signal to a series of single-molecule devices during junction formation and breakdown. By measuring the current response at this frequency, it is possible to determine the most probable binding and contact configurations for the molecular junction at room temperature in solution, and to obtain information about how an applied strain is distributed within the molecular junction. These results provide insight into the complex configuration of single-molecule devices, and are in excellent agreement with previous predictions from theoretical models.

Temperature and relative humidity distributions in a medium-size administrative town in southwest Nigeria.

PubMed

Akinbode, O M; Eludoyin, A O; Fashae, O A

2008-04-01

This study was carried out in one of the medium-sized public administrative towns in the southwestern part of Nigeria. Its aim is to highlight the effect of spatial distribution of settlements, population, and socio-economic activities on urban air temperature and humidity in the town. Temperature and relative humidity data from 1992 to 2001 were obtained from three meteorological stations in Akure, the Administrative Capital of Ondo State, Nigeria. The stations are located within the Federal Ministry of Aviation, Akure Airport (FMA), Federal University of Technology, Akure (FUTA) and Federal School of Agriculture (SOA). Air temperature and relative humidity measurements were also obtained from 27 points, which were cited to include road junctions, markets, built up areas, etc., using sling psychrometer. The data were subsequently analysed for spatial and temporal variations using statistical packages (SPSS and Microsoft Excel) and isolines. Actual vapour pressure and dew point temperature were computed using Magnus conversion formulae. The results obtained showed that spatial variation was insignificant, in terms of the temperature and humidity variables. The annual mean temperature (Tmean) ranged between 21.9 and 30.4 degrees C while minimum (Tmin) and maximum (Tmax) temperatures varied from 13 to 26 and 21.5-39.6 degrees C, respectively. Relative humidity (RH), actual vapour pressure (Es) and dew point temperature (Td) values also varied from 39.1% to 98.2%, 19.7-20.8 gm(-3), and 17.3-17.8 degrees C, respectively. A significant relationship (p>0.6; r<0.05) between Tmin, Es and Td was observed while the daytime 'urban heat island' intensity (UHI) ranged between 0.5 and 2.5 degrees C within the study period. The study concluded that there is influence of urban canopy on the microclimate of Akure, and hypothesizes that the urban dwellers may be subjected to some levels of weather related physiological disorderliness.