30 CFR 75.907 - Design of trailing cables for medium-voltage circuits.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Design of trailing cables for medium-voltage... Medium-Voltage Alternating Current Circuits § 75.907 Design of trailing cables for medium-voltage circuits. [Statutory Provisions] Trailing cables for medium-voltage circuits shall include grounding...

30 CFR 77.901 - Protection of low- and medium-voltage three-phase circuits.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Protection of low- and medium-voltage three... WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.901 Protection of low- and medium-voltage three-phase circuits. (a) Low- and medium-voltage circuits supplying...

30 CFR 77.901 - Protection of low- and medium-voltage three-phase circuits.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Protection of low- and medium-voltage three... WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.901 Protection of low- and medium-voltage three-phase circuits. (a) Low- and medium-voltage circuits supplying...

30 CFR 77.901 - Protection of low- and medium-voltage three-phase circuits.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Protection of low- and medium-voltage three... WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.901 Protection of low- and medium-voltage three-phase circuits. (a) Low- and medium-voltage circuits supplying...

30 CFR 77.901 - Protection of low- and medium-voltage three-phase circuits.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Protection of low- and medium-voltage three... WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.901 Protection of low- and medium-voltage three-phase circuits. (a) Low- and medium-voltage circuits supplying...

30 CFR 77.901 - Protection of low- and medium-voltage three-phase circuits.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Protection of low- and medium-voltage three... WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.901 Protection of low- and medium-voltage three-phase circuits. (a) Low- and medium-voltage circuits supplying...

30 CFR 75.902 - Low- and medium-voltage ground check monitor circuits.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low- and medium-voltage ground check monitor... Medium-Voltage Alternating Current Circuits § 75.902 Low- and medium-voltage ground check monitor circuits. [Statutory Provisions] On or before September 30, 1970, low- and medium-voltage resistance...

30 CFR 75.902 - Low- and medium-voltage ground check monitor circuits.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Low- and medium-voltage ground check monitor... Medium-Voltage Alternating Current Circuits § 75.902 Low- and medium-voltage ground check monitor circuits. [Statutory Provisions] On or before September 30, 1970, low- and medium-voltage resistance...

30 CFR 75.902 - Low- and medium-voltage ground check monitor circuits.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Low- and medium-voltage ground check monitor... Medium-Voltage Alternating Current Circuits § 75.902 Low- and medium-voltage ground check monitor circuits. [Statutory Provisions] On or before September 30, 1970, low- and medium-voltage resistance...

30 CFR 75.902 - Low- and medium-voltage ground check monitor circuits.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Low- and medium-voltage ground check monitor... Medium-Voltage Alternating Current Circuits § 75.902 Low- and medium-voltage ground check monitor circuits. [Statutory Provisions] On or before September 30, 1970, low- and medium-voltage resistance...

30 CFR 75.902 - Low- and medium-voltage ground check monitor circuits.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Low- and medium-voltage ground check monitor... Medium-Voltage Alternating Current Circuits § 75.902 Low- and medium-voltage ground check monitor circuits. [Statutory Provisions] On or before September 30, 1970, low- and medium-voltage resistance...

30 CFR 77.902 - Low- and medium-voltage ground check monitor circuits.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Low- and medium-voltage ground check monitor... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.902 Low- and medium-voltage ground check monitor circuits. On and after September 30, 1971, three-phase low- and...

30 CFR 77.902 - Low- and medium-voltage ground check monitor circuits.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Low- and medium-voltage ground check monitor... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.902 Low- and medium-voltage ground check monitor circuits. On and after September 30, 1971, three-phase low- and...

30 CFR 77.902 - Low- and medium-voltage ground check monitor circuits.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Low- and medium-voltage ground check monitor... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.902 Low- and medium-voltage ground check monitor circuits. On and after September 30, 1971, three-phase low- and...

30 CFR 77.902 - Low- and medium-voltage ground check monitor circuits.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low- and medium-voltage ground check monitor... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.902 Low- and medium-voltage ground check monitor circuits. On and after September 30, 1971, three-phase low- and...

30 CFR 77.902 - Low- and medium-voltage ground check monitor circuits.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Low- and medium-voltage ground check monitor... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.902 Low- and medium-voltage ground check monitor circuits. On and after September 30, 1971, three-phase low- and...

30 CFR 75.511 - Low-, medium-, or high-voltage distribution circuits and equipment; repair.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Low-, medium-, or high-voltage distribution... Electrical Equipment-General § 75.511 Low-, medium-, or high-voltage distribution circuits and equipment; repair. [Statutory Provision] No electrical work shall be performed on low-, medium-, or high-voltage...

30 CFR 75.511 - Low-, medium-, or high-voltage distribution circuits and equipment; repair.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Low-, medium-, or high-voltage distribution... Electrical Equipment-General § 75.511 Low-, medium-, or high-voltage distribution circuits and equipment; repair. [Statutory Provision] No electrical work shall be performed on low-, medium-, or high-voltage...

30 CFR 75.511 - Low-, medium-, or high-voltage distribution circuits and equipment; repair.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Low-, medium-, or high-voltage distribution... Electrical Equipment-General § 75.511 Low-, medium-, or high-voltage distribution circuits and equipment; repair. [Statutory Provision] No electrical work shall be performed on low-, medium-, or high-voltage...

30 CFR 75.511 - Low-, medium-, or high-voltage distribution circuits and equipment; repair.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low-, medium-, or high-voltage distribution... Electrical Equipment-General § 75.511 Low-, medium-, or high-voltage distribution circuits and equipment; repair. [Statutory Provision] No electrical work shall be performed on low-, medium-, or high-voltage...

30 CFR 75.511 - Low-, medium-, or high-voltage distribution circuits and equipment; repair.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Low-, medium-, or high-voltage distribution... Electrical Equipment-General § 75.511 Low-, medium-, or high-voltage distribution circuits and equipment; repair. [Statutory Provision] No electrical work shall be performed on low-, medium-, or high-voltage...

Present Status of Power Circuit Breaker and its Future

NASA Astrophysics Data System (ADS)

Yoshioka, Yoshio

Gas circuit breaker and vacuum circuit breaker are the 2 main types of circuit breaker used in extra high voltage and medium voltage networks. After reviewing the history of these circuit breakers, their present status and technologies are described. As for future technology, computation of interrupting phenomena, SF6 gas less apparatus and expectation of the high voltage vacuum circuit breaker are discussed.

30 CFR 77.902-1 - Fail safe ground check circuits; maximum voltage.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Fail safe ground check circuits; maximum voltage. 77.902-1 Section 77.902-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.902-1 Fail safe...

30 CFR 77.902-1 - Fail safe ground check circuits; maximum voltage.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Fail safe ground check circuits; maximum voltage. 77.902-1 Section 77.902-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.902-1 Fail safe...

30 CFR 77.902-1 - Fail safe ground check circuits; maximum voltage.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Fail safe ground check circuits; maximum voltage. 77.902-1 Section 77.902-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.902-1 Fail safe...

Fingerprinted circuits and methods of making and identifying the same

NASA Technical Reports Server (NTRS)

Ferguson, Michael Ian (Inventor)

2011-01-01

A circuit having a fingerprint for identification of a particular instantiation of the circuit is disclosed. The circuit may include a plurality of digital circuits or gates. Each of the digital circuits or gates is responsive to a configuration voltage applied to its analog input for controlling whether or not the digital circuit or gate performs its intended digital function and each of the digital circuits or gates transitioning between its functional state and its at least one other state when the configuration voltage equals a boundary voltage. The boundary voltage varies between different instantiations of the circuit for a majority of the digital circuits or gates and these differing boundary voltages serving to identify (or fingerprint) different instantiations of the same circuit.

Fingerprinted circuits and methods of making and identifying the same

NASA Technical Reports Server (NTRS)

Ferguson, Michael Ian (Inventor)

2012-01-01

A circuit having a fingerprint for identification of a particular instantiation of the circuit is disclosed. The circuit may include a plurality of digital circuits or gates. Each of the digital circuits or gates is responsive to a configuration voltage applied to its analog input for controlling whether or not the digital circuit or gate performs its intended digital function and each of the digital circuits or gates transitioning between its functional state and its at least one other state when the configuration voltage equals a boundary voltage. The boundary voltage varies between different instantiations of the circuit for a majority of the digital circuits or gates and these differing boundary voltages serving to identify (or fingerprint) different instantiations of the same circuit.

30 CFR 75.802 - Protection of high-voltage circuits extending underground.

Code of Federal Regulations, 2010 CFR

2010-07-01

... serve as a grounding conductor for the frames of all high-voltage equipment supplied power from that... stationary electric equipment if: (1) Such circuits are either steel armored or installed in grounded, rigid steel conduit throughout their entire length; or, (2) The voltage of such circuits is nominally 2,400...

30 CFR 75.802 - Protection of high-voltage circuits extending underground.

Code of Federal Regulations, 2011 CFR

2011-07-01

... serve as a grounding conductor for the frames of all high-voltage equipment supplied power from that... stationary electric equipment if: (1) Such circuits are either steel armored or installed in grounded, rigid steel conduit throughout their entire length; or, (2) The voltage of such circuits is nominally 2,400...

NGIPS Early Design Space Assessment

DTIC Science & Technology

2014-07-17

medium - voltage dc ( MVDC ) shipboard power system are described below. These studies pursue the questions posed in the white paper. In...usna.edu Abstract—Short-circuit protection is one of the greatest risks associated with a transition towards medium - voltage dc ( MVDC ) shipboard power...protection is one of the greatest risks associated with a transition towards medium - voltage dc ( MVDC ) shipboard power

Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits.

PubMed

Chen, Bingyan; Zhang, Panpan; Ding, Li; Han, Jie; Qiu, Song; Li, Qingwen; Zhang, Zhiyong; Peng, Lian-Mao

2016-08-10

Top-gated p-type field-effect transistors (FETs) have been fabricated in batch based on carbon nanotube (CNT) network thin films prepared from CNT solution and present high yield and highly uniform performance with small threshold voltage distribution with standard deviation of 34 mV. According to the property of FETs, various logical and arithmetical gates, shifters, and d-latch circuits were designed and demonstrated with rail-to-rail output. In particular, a 4-bit adder consisting of 140 p-type CNT FETs was demonstrated with higher packing density and lower supply voltage than other published integrated circuits based on CNT films, which indicates that CNT based integrated circuits can reach to medium scale. In addition, a 2-bit multiplier has been realized for the first time. Benefitted from the high uniformity and suitable threshold voltage of CNT FETs, all of the fabricated circuits based on CNT FETs can be driven by a single voltage as small as 2 V.

Technical Trend of Environment-friendly High Voltage Vacuum Circuit Breaker (VCB)

NASA Astrophysics Data System (ADS)

Okubo, Hitoshi

Vacuum Circuit Breakers (VCBs) have widely been used for low and medium voltage level, because of their high current interruption performance, maintenance free operations and environment-friendly characteristics. The VCB is now going to be applied to higher voltage systems for transmission and substation use. In this paper, the recent technical trend and future perspectives of high voltage VCBs are described, as well as their technical background.

Arc lamp power supply using a voltage multiplier

NASA Technical Reports Server (NTRS)

Leighty, Bradley D.

1988-01-01

A power supply is provided for an arc discharge lamp which includes a relatively low voltage high current power supply section and a high voltage starter circuit. The low voltage section includes a transformer, rectifier, variable resistor and a bank of capacitors, while the starter circuit comprises several diodes and capacitors connected as a Cockcroft-Walton multiplier. The starting circuit is effectively bypassed when the lamp arc is established and serves to automatically provide a high starting voltage to re-strike the lamp arc if the arc is extinguished by a power interruption.

Pulse circuit apparatus for gas discharge laser

DOEpatents

Bradley, Laird P.

1980-01-01

Apparatus and method using a unique pulse circuit for a known gas discharge laser apparatus to provide an electric field for preconditioning the gas below gas breakdown and thereafter to place a maximum voltage across the gas which maximum voltage is higher than that previously available before the breakdown voltage of that gas laser medium thereby providing greatly increased pumping of the laser.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of onemore » or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.« less

Soft switching resonant converter with duty-cycle control in DC micro-grid system

NASA Astrophysics Data System (ADS)

Lin, Bor-Ren

2018-01-01

Resonant converter has been widely used for the benefits of low switching losses and high circuit efficiency. However, the wide frequency variation is the main drawback of resonant converter. This paper studies a new modular resonant converter with duty-cycle control to overcome this problem and realise the advantages of low switching losses, no reverse recovery current loss, balance input split voltages and constant frequency operation for medium voltage direct currentgrid or system network. Series full-bridge (FB) converters are used in the studied circuit in order to reduce the voltage stresses and power rating on power semiconductors. Flying capacitor is used between two FB converters to balance input split voltages. Two circuit modules are paralleled on the secondary side to lessen the current rating of rectifier diodes and the size of magnetic components. The resonant tank is operated at inductive load circuit to help power switches to be turned on at zero voltage with wide load range. The pulse-width modulation scheme is used to regulate output voltage. Experimental verifications are provided to show the performance of the proposed circuit.

30 CFR 75.1002 - Installation of electric equipment and conductors; permissibility.

Code of Federal Regulations, 2012 CFR

2012-07-01

... faces must be— (1) Shielded high-voltage cables supplying power to permissible longwall equipment; (2... intrinsically safe circuits; and (4) Cables and conductors supplying power to low- and medium-voltage permissible equipment. (5) Shielded high-voltage cables supplying power to permissible continuous mining...

30 CFR 75.1002 - Installation of electric equipment and conductors; permissibility.

Code of Federal Regulations, 2013 CFR

2013-07-01

... faces must be— (1) Shielded high-voltage cables supplying power to permissible longwall equipment; (2... intrinsically safe circuits; and (4) Cables and conductors supplying power to low- and medium-voltage permissible equipment. (5) Shielded high-voltage cables supplying power to permissible continuous mining...

30 CFR 75.1002 - Installation of electric equipment and conductors; permissibility.

Code of Federal Regulations, 2014 CFR

2014-07-01

... faces must be— (1) Shielded high-voltage cables supplying power to permissible longwall equipment; (2... intrinsically safe circuits; and (4) Cables and conductors supplying power to low- and medium-voltage permissible equipment. (5) Shielded high-voltage cables supplying power to permissible continuous mining...

Method and apparatus for I-V data acquisition from solar cells

DOEpatents

Cole, Steven W.

1985-01-01

A method and apparatus for logging current-voltage (I-V) characteristic d of a solar cell module (10) in two modes using a portable instrument. One mode controls the load current through a circuit (36) in 256 equal intervals while voltage is measured from open circuit to at least halfway into the knee of the curve and the other mode controls the load voltage through a circuit (34) in 256 equal intervals from the lowest voltage measurement possible (short circuit) to at least halfway into the knee of the curve, under control of a microcomputer (12). All measurements are packed by discarding each measurement that is within 0.5% of the value predicted from two previous measurements, except every ninth (9th) measurement which is retained. The remaining data is further packed into a memory block of a detachable storage medium (14) by recording the data points in sequence following a header containing data common to all points, with each point having the value of the controlled parameter recorded as the number of increments from the previous point recorded followed by the measured value. The detachable storage medium is preferably a solid state device for reliability, and is transferable to a playback terminal which unpacks the data for analysis and display.

Low-to-Medium Power Single Chip Digital Controlled DC-DC Regulator for Point-of-Load Applications

NASA Technical Reports Server (NTRS)

Adell, Philippe C. (Inventor); Bakkaloglu, Bertan (Inventor); Vermeire, Bert (Inventor); Liu, Tao (Inventor)

2015-01-01

A DC-DC converter for generating a DC output voltage includes: a digitally controlled pulse width modulator (DPWM) for controlling a switching power stage to supply a varying voltage to an inductor; and a digital voltage feedback circuit for controlling the DPWM in accordance with a feedback voltage corresponding to the DC output voltage, the digital voltage feedback circuit including: a first voltage controlled oscillator for converting the feedback voltage into a first frequency signal and to supply the first frequency signal to a first frequency discriminator; a second voltage controlled oscillator for converting a reference voltage into a second frequency signal and to supply the second frequency signal to a second frequency discriminator; a digital comparator for comparing digital outputs of the first and second frequency discriminators and for outputting a digital feedback signal; and a controller for controlling the DPWM in accordance with the digital feedback signal.

30 CFR 77.903 - Disconnecting devices.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Disconnecting devices. 77.903 Section 77.903... Medium-Voltage Alternating Current Circuits § 77.903 Disconnecting devices. Disconnecting devices shall be installed in circuits supplying power to portable or mobile equipment and shall provide visual...

A 32 kb 9T near-threshold SRAM with enhanced read ability at ultra-low voltage operation

NASA Astrophysics Data System (ADS)

Kim, Tony Tae-Hyoung; Lee, Zhao Chuan; Do, Anh Tuan

2018-01-01

Ultra-low voltage SRAMs are highly sought-after in energy-limited systems such as battery-powered and self-harvested SoCs. However, ultra-low voltage operation diminishes SRAM read bitline (RBL) sensing margin significantly. This paper tackles this issue by presenting a novel 9T cell with data-independent RBL leakage in combination with an RBL boosting technique for enhancing the sensing margin. The proposed technique automatically tracks process, temperature and voltage (PVT) variations for robust sensing margin enhancement. A test chip fabricated in 65 nm CMOS technology shows that the proposed scheme significantly enlarges the sensing margin compared to the conventional bitline sensing scheme. It also achieves the minimum operating voltage of 0.18 V and the minimum energy consumption of 0.92 J/access at 0.4 V. He received 2016 International Low Power Design Contest Award from ISLPED, a best paper award at 2014 and 2011 ISOCC, 2008 AMD/CICC Student Scholarship Award, 2008 Departmental Research Fellowship from Univ. of Minnesota, 2008 DAC/ISSCC Student Design Contest Award, 2008, 2001, and 1999 Samsung Humantec Thesis Award and, 2005 ETRI Journal Paper of the Year Award. He is an author/co-author of +100 journal and conference papers and has 17 US and Korean patents registered. His current research interests include low power and high performance digital, mixed- mode, and memory circuit design, ultra-low voltage circuits and systems design, variation and aging tolerant circuits and systems, and circuit techniques for 3D ICs. He serves as an associate editor of IEEE Transactions on VLSI Systems. He is an IEEE senior member and the Chair of IEEE Solid-State Circuits Society Singapore Chapter. He has served numerous conferences as a committee member.

30 CFR 75.805 - Couplers.

Code of Federal Regulations, 2010 CFR

2010-07-01

... ground check continuity conductor shall be broken first and the ground conductors shall be broken last.... [Statutory Provisions] Couplers that are used with medium-voltage or high-voltage power circuits shall be of the three-phase type with a full metallic shell, except that the Secretary may permit, under such...

PARTICLE BEAM TRACKING CIRCUIT

DOEpatents

Anderson, O.A.

1959-05-01

>A particle-beam tracking and correcting circuit is described. Beam induction electrodes are placed on either side of the beam, and potentials induced by the beam are compared in a voltage comparator or discriminator. This comparison produces an error signal which modifies the fm curve at the voltage applied to the drift tube, thereby returning the orbit to the preferred position. The arrangement serves also to synchronize accelerating frequency and magnetic field growth. (T.R.H.)

Fiber-coupled LED gas sensor and its application to online monitoring of ecoefficient dielectric insulation gases in high-voltage circuit breakers.

PubMed

Kramer, Axel; Over, Daniel; Stoller, Patrick; Paul, Thomas A

2017-05-20

Novel dielectric insulation gases used as alternatives to sulfur hexafluoride in gas-insulated switchgear (GIS) include several mixtures containing fluorinated organic compounds. We developed a fiber-optic analyzer enabling concentration measurement of fluoroketones used in medium- and high-voltage switchgear applications by ABB, with concurrent compensation of disturbing effects caused by dust and dirt. The sensor enables measurements in GIS and even in operating high-voltage circuit breakers. The online availability of concentration readings of fluoroketones is important for development tests, but can also be applied for monitoring or diagnostics of field installations.

Automated qualification and analysis of protective spark gaps for DC accelerators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Banerjee, Srutarshi; Rajan, Rehim N.; Dewangan, S.

2014-07-01

Protective spark gaps are used in the high voltage multiplier column of a 3 MeV DC Accelerator to prevent excessive voltage build-ups. Precise gap of 5 mm is maintained between the electrodes in these spark gaps for obtaining 120 kV± 5 kV in 6 kg/cm{sup 2} SF{sub 6} environment which is the dielectric medium. There are 74 such spark gaps used in the multiplier. Each spark gap has to be qualified for electrical performance before fitting in the accelerator to ensure reliable operation. As the breakdown voltage stabilizes after a large number of sparks between the electrodes, the qualification processmore » becomes time consuming and cumbersome. For qualifying large number of spark gaps an automatic breakdown analysis setup has been developed. This setup operates in air, a dielectric medium. The setup consists of a flyback topology based high voltage power supply with maximum rating of 25 kV. This setup works in conjunction with spark detection and automated shutdown circuit. The breakdown voltage is sensed using a peak detector circuit. The voltage breakdown data is recorded and statistical distribution of the breakdown voltage has been analyzed. This paper describes details of the diagnostics and the spark gap qualification process based on the experimental data. (author)« less

CMOS image sensor with contour enhancement

NASA Astrophysics Data System (ADS)

Meng, Liya; Lai, Xiaofeng; Chen, Kun; Yuan, Xianghui

2010-10-01

Imitating the signal acquisition and processing of vertebrate retina, a CMOS image sensor with bionic pre-processing circuit is designed. Integration of signal-process circuit on-chip can reduce the requirement of bandwidth and precision of the subsequent interface circuit, and simplify the design of the computer-vision system. This signal pre-processing circuit consists of adaptive photoreceptor, spatial filtering resistive network and Op-Amp calculation circuit. The adaptive photoreceptor unit with a dynamic range of approximately 100 dB has a good self-adaptability for the transient changes in light intensity instead of intensity level itself. Spatial low-pass filtering resistive network used to mimic the function of horizontal cell, is composed of the horizontal resistor (HRES) circuit and OTA (Operational Transconductance Amplifier) circuit. HRES circuit, imitating dendrite of the neuron cell, comprises of two series MOS transistors operated in weak inversion region. Appending two diode-connected n-channel transistors to a simple transconductance amplifier forms the OTA Op-Amp circuit, which provides stable bias voltage for the gate of MOS transistors in HRES circuit, while serves as an OTA voltage follower to provide input voltage for the network nodes. The Op-Amp calculation circuit with a simple two-stage Op-Amp achieves the image contour enhancing. By adjusting the bias voltage of the resistive network, the smoothing effect can be tuned to change the effect of image's contour enhancement. Simulations of cell circuit and 16×16 2D circuit array are implemented using CSMC 0.5μm DPTM CMOS process.

Apparatus and method for detecting and measuring changes in linear relationships between a number of high frequency signals

DOEpatents

Bittner, J.W.; Biscardi, R.W.

1991-03-19

An electronic measurement circuit is disclosed for high speed comparison of the relative amplitudes of a predetermined number of electrical input signals independent of variations in the magnitude of the sum of the signals. The circuit includes a high speed electronic switch that is operably connected to receive on its respective input terminals one of said electrical input signals and to have its common terminal serve as an input for a variable-gain amplifier-detector circuit that is operably connected to feed its output to a common terminal of a second high speed electronic switch. The respective terminals of the second high speed electronic switch are operably connected to a plurality of integrating sample and hold circuits, which in turn have their outputs connected to a summing logic circuit that is operable to develop first, second and third output voltages, the first output voltage being proportional to a predetermined ratio of sums and differences between the compared input signals, the second output voltage being proportional to a second summed ratio of predetermined sums and differences between said input signals, and the third output voltage being proportional to the sum of signals to the summing logic circuit. A servo system that is operably connected to receive said third output signal and compare it with a reference voltage to develop a slowly varying feedback voltage to control the variable-gain amplifier in said common amplifier-detector circuit in order to make said first and second output signals independent of variations in the magnitude of the sum of said input signals. 2 figures.

Apparatus and method for detecting and measuring changes in linear relationships between a number of high frequency signals

DOEpatents

Bittner, John W.; Biscardi, Richard W.

1991-01-01

An electronic measurement circuit for high speed comparison of the relative amplitudes of a predetermined number of electrical input signals independent of variations in the magnitude of the sum of the signals. The circuit includes a high speed electronic switch that is operably connected to receive on its respective input terminals one of said electrical input signals and to have its common terminal serve as an input for a variable-gain amplifier-detector circuit that is operably connected to feed its output to a common terminal of a second high speed electronic switch. The respective terminals of the second high speed electronic switch are operably connected to a plurality of integrating sample and hold circuits, which in turn have their outputs connected to a summing logic circuit that is operable to develop first, second and third output voltages, the first output voltage being proportional to a predetermined ratio of sums and differences between the compared input signals, the second output voltage being proportional to a second summed ratio of predetermined sums and differences between said input signals, and the third output voltage being proportional to the sum of signals to the summing logic circuit. A servo system that is operably connected to receive said third output signal and compare it with a reference voltage to develop a slowly varying feedback voltage to control the variable-gain amplifier in said common amplifier-detector circuit in order to make said first and second output signals independent of variations in the magnitude of the sum of said input signals.

Synthetic Plasma Liquid Based Electronic Circuits Realization-A Novel Concept.

PubMed

Pandya, Killol V; Kosta, ShivPrasad

2016-09-01

Biomedical research is contributing significant role in the field of biomedical engineering and applied science. It brings research and innovations to a different level. This study investigated artificial human blood -synthetic plasma liquid as conductive medium. Keeping in mind the conductivity of synthetic plasma, astable multivibrator as well as differential amplifier circuit were demonstrated. The circuits were given normal input voltages at regular temperature and ideal conditions. The result shows desired response which supports the novel concept. For both the circuits, phase shift of 180° achieved by analysing biological electronic circuits.

Driver for solar cell I-V characteristic plots

NASA Technical Reports Server (NTRS)

Turner, G. B. (Inventor)

1980-01-01

A bipolar voltage ramp generator which applies a linear voltage through a resistor to a solar cell for plotting its current versus voltage (I-V) characteristic between short circuit and open circuit conditions is disclosed. The generator has automatic stops at the end points. The resistor serves the multiple purpose of providing a current sensing resistor, setting the full-scale current value, and providing a load line with a slope approximately equal to one, such that it will pass through the origin and the approximate center of the I-V curve with about equal distance from that center to each of the end points.

Latest Trends of Vacuum Circuit Breaker and Related Technologies

NASA Astrophysics Data System (ADS)

Kozono, Hideaki; Tanimizu, Toru

Vacuum Circuit Breakers (VCBs) have been widely used for medium voltage level, because of their performance: compact size, light weight, maintenance free operations and environment-friendly characteristics. They become most comfortable breakers for our needs from other breakers: oil, air, magnetic blast and gas. In this paper the history of vacuum, and latest trends of circuit breakers and related technologies are described, as well as merits or demerits of using vacuum technologies.

30 CFR 77.905 - Connection of single-phase loads.

Code of Federal Regulations, 2012 CFR

2012-07-01

... COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.905 Connection of single-phase loads. Single-phase loads shall be connected phase-to-phase in resistance grounded systems. ...

30 CFR 77.905 - Connection of single-phase loads.

Code of Federal Regulations, 2014 CFR

2014-07-01

... COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.905 Connection of single-phase loads. Single-phase loads shall be connected phase-to-phase in resistance grounded systems. ...

30 CFR 77.905 - Connection of single-phase loads.

Code of Federal Regulations, 2013 CFR

2013-07-01

... COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.905 Connection of single-phase loads. Single-phase loads shall be connected phase-to-phase in resistance grounded systems. ...

Synchronous Controlled Switching by VCB with Electromagnetic Operation Mechanism

NASA Astrophysics Data System (ADS)

Horinouchi, Katsuhiko; Tsukima, Mitsuru; Tohya, Nobumoto; Inoue, Ryuuichi; Sasao, Hiroyuki

Synchronously controlled switching to suppress transient overvoltage and overcurrent resulting from when the circuit breakers on medium voltage systems are closed is described. Firstly, by simulation it is found that if the closing time is synchronously controlled so that the contacts of the circuit breaker close completely at the instant when the voltage across contacts of the breaker at each of the three individual phases are zero, the resulting overvoltage and overcurrent is significantly suppressed when compared to conventional three phase simultaneous closing. Next, an algorithm for determining the closing timing based on a forecasted voltage zero waveform, obtained from voltage sampling data, is presented. Finally, a synchronous closing experiment of voltage 22kV utilizing a controller to implement the algorithm and a VCB with an electromagnetic operation mechanism is presented. The VCB was successfully closed at the zero point within a tolerance range of 200 microseconds.

30 CFR 75.902-4 - Attachment of ground conductors and ground check wires to equipment frames; use of separate...

Code of Federal Regulations, 2014 CFR

2014-07-01

... SAFETY STANDARDS-UNDERGROUND COAL MINES Underground Low- and Medium-Voltage Alternating Current Circuits... from resistance grounded systems separate connections shall be used when practicable. ...

30 CFR 75.902-4 - Attachment of ground conductors and ground check wires to equipment frames; use of separate...

Code of Federal Regulations, 2013 CFR

2013-07-01

... SAFETY STANDARDS-UNDERGROUND COAL MINES Underground Low- and Medium-Voltage Alternating Current Circuits... from resistance grounded systems separate connections shall be used when practicable. ...

30 CFR 75.902-4 - Attachment of ground conductors and ground check wires to equipment frames; use of separate...

Code of Federal Regulations, 2012 CFR

2012-07-01

... SAFETY STANDARDS-UNDERGROUND COAL MINES Underground Low- and Medium-Voltage Alternating Current Circuits... from resistance grounded systems separate connections shall be used when practicable. ...

Teaching Electric Fences: The Physics behind the Brainiac Video

ERIC Educational Resources Information Center

Vollmer, Michael

2016-01-01

In many states, electric fences are used to prevent animals from leaving a designated area, for example for grazing. They are quite well known by most students and can therefore serve as daily-life examples of electric circuits. Besides helping to grasp the ideas of Kirchhoff's laws for voltages and currents in circuits according to loop and…

Guanidinium: A Route to Enhanced Carrier Lifetime and Open-Circuit Voltage in Hybrid Perovskite Solar Cells.

PubMed

De Marco, Nicholas; Zhou, Huanping; Chen, Qi; Sun, Pengyu; Liu, Zonghao; Meng, Lei; Yao, En-Ping; Liu, Yongsheng; Schiffer, Andy; Yang, Yang

2016-02-10

Hybrid perovskites have shown astonishing power conversion efficiencies owed to their remarkable absorber characteristics including long carrier lifetimes, and a relatively substantial defect tolerance for solution-processed polycrystalline films. However, nonradiative charge carrier recombination at grain boundaries limits open circuit voltages and consequent performance improvements of perovskite solar cells. Here we address such recombination pathways and demonstrate a passivation effect through guanidinium-based additives to achieve extraordinarily enhanced carrier lifetimes and higher obtainable open circuit voltages. Time-resolved photoluminescence measurements yield carrier lifetimes in guanidinium-based films an order of magnitude greater than pure-methylammonium counterparts, giving rise to higher device open circuit voltages and power conversion efficiencies exceeding 17%. A reduction in defect activation energy of over 30% calculated via admittance spectroscopy and confocal fluorescence intensity mapping indicates successful passivation of recombination/trap centers at grain boundaries. We speculate that guanidinium ions serve to suppress formation of iodide vacancies and passivate under-coordinated iodine species at grain boundaries and within the bulk through their hydrogen bonding capability. These results present a simple method for suppressing nonradiative carrier loss in hybrid perovskites to further improve performances toward highly efficient solar cells.

Experimental characterization of a coaxial plasma accelerator for a colliding plasma experiment

NASA Astrophysics Data System (ADS)

Wiechula, J.; Hock, C.; Iberler, M.; Manegold, T.; Schönlein, A.; Jacoby, J.

2015-04-01

We report experimental results of a single coaxial plasma accelerator in preparation for a colliding plasma experiment. The utilized device consisted of a coaxial pair of electrodes, accelerating the plasma due to J ×B forces. A pulse forming network, composed of three capacitors connected in parallel, with a total capacitance of 27 μF was set up. A thyratron allowed to switch the maximum applied voltage of 9 kV. Under these conditions, the pulsed currents reached peak values of about 103 kA. The measurements were performed in a small vacuum chamber with a neutral-gas prefill at gas pressures between 10 Pa and 14 000 Pa. A gas mixture of ArH2 with 2.8% H2 served as the discharge medium. H2 was chosen in order to observe the broadening of the Hβ emission line and thus estimate the electron density. The electron density for a single plasma accelerator reached peak values on the order of 1016 cm-3 . Electrical parameters, inter alia inductance and resistance, were determined for the LCR circuit during the plasma acceleration as well as in a short circuit case. Depending on the applied voltage, the inductance and resistance reached values ranging from 194 nH to 216 nH and 13 mΩ to 23 mΩ, respectively. Furthermore, the plasma velocity was measured using a fast CCD camera. Plasma velocities of 2 km/s up to 17 km/s were observed, the magnitude being highly correlated with gas pressure and applied voltage.

Polyaniline Nanofibers as the Hole Transport Medium in an Inverse Dye-Sensitized Solar Cell

NASA Astrophysics Data System (ADS)

Hesselsweet, Ian Brock

In order to become a viable alternative to silicon photovoltaics, dye-sensitized solar cells must overcome several issues primarily resulting from their use of a liquid electrolyte. Much research has gone into correcting these shortcomings by replacing the liquid electrolyte with solid-state hole-transport media. Using these solid-state materials brings new difficulties, such as completely filling the pores in the TiO2 nanostructure, and achieving good adhesion with the dye-coated TiO2. A novel approach to addressing these difficulties is the inverse dye-sensitized solar cell design. In this method the devices are constructed in reverse order, with the solidstate hole-transport medium providing the nanostructure instead of the TiO2. This allows new materials and methods to be used which may better address these issues. In this project, inverse dye-sensitized solar cells using polyaniline nanofibers as the hole transport medium were prepared and characterized. The devices were prepared on fluorine-doped tin oxide (FTO) coated glass electrodes. The first component was a dense spin-coated polyaniline blocking layer, to help prevent short circuiting of the devices. The second layer was a thin film of drop cast polyaniline nanofibers which acted as the hole transport medium and provided high surface area for the dye attachment. The dye used was 5,10,15,20-tetrakis(4-carboxyphenyl)porphyrin (TCPP), which was covalently attached to the nanofibers using a Friedel-Crafts acylation. Titania gel was then deposited into the pores of the nanofiber film by controlled hydrolysis of a titanium complex (Tyzor LA). A back electrode of TiO2 nanoparticles sintered on FTO was pressed on top to complete the devices. A typical device generated an open circuit voltage of 0.17 V and a closed circuit current of 5.7 nA/cm2 while the highest open circuit voltage recorded for any variation on a device was 0.31 V and the highest short circuit current was 52 nA/cm2 under AM 1.5 simulated solar spectrum at 100 mW/cm2. Initially prepared devices did not generate a measureable photocurrent due to two materials flaws. The first was traced to the poorly developed conduction band of the titania gel, as deposited from Tyzor LA hydrolysis, resulting in poor electron conduction. This prevented the titania gel from efficiently functioning as the electron transport medium. A remedy was found in adding a layer of sintered anatase TiO2 nanoparticles on the back electrode to serve as the electron transport medium. However, this remedy does not address the issue of the inability of titania gel to efficiently transport electrons photogenerated deep in the nanofiber film to the back electrode. The second flaw was found to originate from fast recombination kinetics between electrons in TiO2 and holes in polyaniline. However, a positive feature was that the titania gel intended to be used as the electron transport medium was found to sufficiently insulate the interface such that the recombination rate slowed enough to allow generation of a measureable photocurrent. Electronic insulation was further enhanced by co-attaching decanoic acid onto the polyaniline nanofibers to fill in pinholes between the dye molecules. While these solutions were not ideal, they were intended to be diagnostic in nature and supplied critical information about the weak links in the device design, thus pointing the way toward improving device performance. Significant enhancements can be expected by addressing these issues in further detail.

Medium-scale carbon nanotube thin-film integrated circuits on flexible plastic substrates.

PubMed

Cao, Qing; Kim, Hoon-sik; Pimparkar, Ninad; Kulkarni, Jaydeep P; Wang, Congjun; Shim, Moonsub; Roy, Kaushik; Alam, Muhammad A; Rogers, John A

2008-07-24

The ability to form integrated circuits on flexible sheets of plastic enables attributes (for example conformal and flexible formats and lightweight and shock resistant construction) in electronic devices that are difficult or impossible to achieve with technologies that use semiconductor wafers or glass plates as substrates. Organic small-molecule and polymer-based materials represent the most widely explored types of semiconductors for such flexible circuitry. Although these materials and those that use films or nanostructures of inorganics have promise for certain applications, existing demonstrations of them in circuits on plastic indicate modest performance characteristics that might restrict the application possibilities. Here we report implementations of a comparatively high-performance carbon-based semiconductor consisting of sub-monolayer, random networks of single-walled carbon nanotubes to yield small- to medium-scale integrated digital circuits, composed of up to nearly 100 transistors on plastic substrates. Transistors in these integrated circuits have excellent properties: mobilities as high as 80 cm(2) V(-1) s(-1), subthreshold slopes as low as 140 m V dec(-1), operating voltages less than 5 V together with deterministic control over the threshold voltages, on/off ratios as high as 10(5), switching speeds in the kilohertz range even for coarse (approximately 100-microm) device geometries, and good mechanical flexibility-all with levels of uniformity and reproducibility that enable high-yield fabrication of integrated circuits. Theoretical calculations, in contexts ranging from heterogeneous percolative transport through the networks to compact models for the transistors to circuit level simulations, provide quantitative and predictive understanding of these systems. Taken together, these results suggest that sub-monolayer films of single-walled carbon nanotubes are attractive materials for flexible integrated circuits, with many potential areas of application in consumer and other areas of electronics.

A 2.5 kW cascaded Schwarz converter for 20 kHz power distribution

NASA Technical Reports Server (NTRS)

Shetler, Russell E.; Stuart, Thomas A.

1989-01-01

Because it avoids the high currents in a parallel loaded capacitor, the cascaded Schwarz converter should offer better component utilization than converters with sinusoidal output voltages. The circuit is relatively easy to protect, and it provides a predictable trapezoidal voltage waveform that should be satisfactory for 20-kHz distribution systems. Analysis of the system is enhanced by plotting curves of normalized variables vs. gamma(1), where gamma(1) is proportional to the variable frequency of the first stage. Light-load operation is greatly improved by the addition of a power recycling rectifier bridge that is back biased at medium to heavy loads. Operation has been verified on a 2.5-kW circuit that uses input and output voltages in the same range as those anticipated for certain future spacecraft power systems.

30 CFR 75.800 - High-voltage circuits; circuit breakers.

Code of Federal Regulations, 2010 CFR

2010-07-01

... shall be equipped with devices to provide protection against under-voltage grounded phase, short circuit... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage circuits; circuit breakers. 75.800... § 75.800 High-voltage circuits; circuit breakers. [Statutory Provisions] High-voltage circuits entering...

Dynamically reconfigurable photovoltaic system

DOEpatents

Okandan, Murat; Nielson, Gregory N.

2016-05-31

A PV system composed of sub-arrays, each having a group of PV cells that are electrically connected to each other. A power management circuit for each sub-array has a communications interface and serves to connect or disconnect the sub-array to a programmable power grid. The power grid has bus rows and bus columns. A bus management circuit is positioned at a respective junction of a bus column and a bus row and is programmable through its communication interface to connect or disconnect a power path in the grid. As a result, selected sub-arrays are connected by selected power paths to be in parallel so as to produce a low system voltage, and, alternately in series so as to produce a high system voltage that is greater than the low voltage by at least a factor of ten.

Dynamically reconfigurable photovoltaic system

DOEpatents

Okandan, Murat; Nielson, Gregory N.

2016-12-27

A PV system composed of sub-arrays, each having a group of PV cells that are electrically connected to each other. A power management circuit for each sub-array has a communications interface and serves to connect or disconnect the sub-array to a programmable power grid. The power grid has bus rows and bus columns. A bus management circuit is positioned at a respective junction of a bus column and a bus row and is programmable through its communication interface to connect or disconnect a power path in the grid. As a result, selected sub-arrays are connected by selected power paths to be in parallel so as to produce a low system voltage, and, alternately in series so as to produce a high system voltage that is greater than the low voltage by at least a factor of ten.

Electronic circuit for measuring series connected electrochemical cell voltages

DOEpatents

Ashtiani, Cyrus N.; Stuart, Thomas A.

2000-01-01

An electronic circuit for measuring voltage signals in an energy storage device is disclosed. The electronic circuit includes a plurality of energy storage cells forming the energy storage device. A voltage divider circuit is connected to at least one of the energy storage cells. A current regulating circuit is provided for regulating the current through the voltage divider circuit. A voltage measurement node is associated with the voltage divider circuit for producing a voltage signal which is proportional to the voltage across the energy storage cell.

30 CFR 77.800 - High-voltage circuits; circuit breakers.

Code of Federal Regulations, 2010 CFR

2010-07-01

... devices to provide protection against under voltage, grounded phase, short circuit and overcurrent. High... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage circuits; circuit breakers. 77.800... COAL MINES Surface High-Voltage Distribution § 77.800 High-voltage circuits; circuit breakers. High...

30 CFR 77.905 - Connection of single-phase loads.

Code of Federal Regulations, 2011 CFR

2011-07-01

... COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.905 Connection of single-phase... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Connection of single-phase loads. 77.905 Section 77.905 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE...

30 CFR 77.905 - Connection of single-phase loads.

Code of Federal Regulations, 2010 CFR

2010-07-01

... COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.905 Connection of single-phase... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Connection of single-phase loads. 77.905 Section 77.905 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE...

30 CFR 77.901-1 - Grounding resistor; continuous current rating.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Grounding resistor; continuous current rating. 77.901-1 Section 77.901-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.901-1 Grounding...

30 CFR 77.901-1 - Grounding resistor; continuous current rating.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Grounding resistor; continuous current rating. 77.901-1 Section 77.901-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.901-1 Grounding...

30 CFR 77.901-1 - Grounding resistor; continuous current rating.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Grounding resistor; continuous current rating. 77.901-1 Section 77.901-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.901-1 Grounding...

30 CFR 77.901-1 - Grounding resistor; continuous current rating.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Grounding resistor; continuous current rating. 77.901-1 Section 77.901-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.901-1 Grounding...

30 CFR 77.901-1 - Grounding resistor; continuous current rating.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Grounding resistor; continuous current rating. 77.901-1 Section 77.901-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.901-1 Grounding...

Preparation of Power Distribution System for High Penetration of Renewable Energy Part I. Dynamic Voltage Restorer for Voltage Regulation Pat II. Distribution Circuit Modeling and Validation

NASA Astrophysics Data System (ADS)

Khoshkbar Sadigh, Arash

Part I: Dynamic Voltage Restorer In the present power grids, voltage sags are recognized as a serious threat and a frequently occurring power-quality problem and have costly consequence such as sensitive loads tripping and production loss. Consequently, the demand for high power quality and voltage stability becomes a pressing issue. Dynamic voltage restorer (DVR), as a custom power device, is more effective and direct solutions for "restoring" the quality of voltage at its load-side terminals when the quality of voltage at its source-side terminals is disturbed. In the first part of this thesis, a DVR configuration with no need of bulky dc link capacitor or energy storage is proposed. This fact causes to reduce the size of the DVR and increase the reliability of the circuit. In addition, the proposed DVR topology is based on high-frequency isolation transformer resulting in the size reduction of transformer. The proposed DVR circuit, which is suitable for both low- and medium-voltage applications, is based on dc-ac converters connected in series to split the main dc link between the inputs of dc-ac converters. This feature makes it possible to use modular dc-ac converters and utilize low-voltage components in these converters whenever it is required to use DVR in medium-voltage application. The proposed configuration is tested under different conditions of load power factor and grid voltage harmonic. It has been shown that proposed DVR can compensate the voltage sag effectively and protect the sensitive loads. Following the proposition of the DVR topology, a fundamental voltage amplitude detection method which is applicable in both single/three-phase systems for DVR applications is proposed. The advantages of proposed method include application in distorted power grid with no need of any low-pass filter, precise and reliable detection, simple computation and implementation without using a phased locked loop and lookup table. The proposed method has been verified by simulation and experimental tests under various conditions considering all possible cases such as different amounts of voltage sag depth (VSD), different amounts of point-on-wave (POW) at which voltage sag occurs, harmonic distortion, line frequency variation, and phase jump (PJ). Furthermore, the ripple amount of fundamental voltage amplitude calculated by the proposed method and its error is analyzed considering the line frequency variation together with harmonic distortion. The best and worst detection time of proposed method were measured 1ms and 8.8ms, respectively. Finally, the proposed method has been compared with other voltage sag detection methods available in literature. Part 2: Power System Modeling for Renewable Energy Integration: As power distribution systems are evolving into more complex networks, electrical engineers have to rely on software tools to perform circuit analysis. There are dozens of powerful software tools available in the market to perform the power system studies. Although their main functions are similar, there are differences in features and formatting structures to suit specific applications. This creates challenges for transferring power system circuit models data (PSCMD) between different software and rebuilding the same circuit in the second software environment. The objective of this part of thesis is to develop a Unified Platform (UP) to facilitate transferring PSCMD among different software packages and relieve the challenges of the circuit model conversion process. UP uses a commonly available spreadsheet file with a defined format, for any home software to write data to and for any destination software to read data from, via a script-based application called PSCMD transfer application. The main considerations in developing the UP are to minimize manual intervention and import a one-line diagram into the destination software or export it from the source software, with all details to allow load flow, short circuit and other analyses. In this study, ETAP, OpenDSS, and GridLab-D are considered, and PSCMD transfer applications written in MATLAB have been developed for each of these to read the circuit model data provided in the UP spreadsheet. In order to test the developed PSCMD transfer applications, circuit model data of a test circuit and a power distribution circuit from Southern California Edison (SCE) - a utility company - both built in CYME, were exported into the spreadsheet file according to the UP format. Thereafter, circuit model data were imported successfully from the spreadsheet files into above mentioned software using the PSCMD transfer applications developed for each software. After the SCE studied circuit is transferred into OpenDSS software using the proposed UP scheme and developed application, it has been studied to investigate the impacts of large-scale solar energy penetration. The main challenge of solar energy integration into power grid is its intermittency (i.e., discontinuity of output power) nature due to cloud shading of photovoltaic panels which depends on weather conditions. In order to conduct this study, OpenDSS time-series simulation feature, which is required due to intermittency of solar energy, is utilized. In this study, the impacts of intermittency of solar energy penetration, especially high-variability points, on voltage fluctuation and operation of capacitor bank and voltage regulator is provided. In addition, the necessity to interpolate and resample unequally spaced time-series measurement data and convert them to equally spaced time-series data as well as the effect of resampling time-interval on the amount of error is discussed. Two applications are developed in Matlab to do interpolation and resampling as well as to calculate the amount of error for different resampling time-intervals to figure out the suitable resampling time-interval. Furthermore, an approach based on cumulative distribution, regarding the length for lines/cables types and the power rating for loads, is presented to prioritize which loads, lines and cables the meters should be installed at to have the most effect on model validation.

Optical sensors for electrical elements of a medium voltage distribution network

NASA Astrophysics Data System (ADS)

De Maria, Letizia; Bartalesi, Daniele; Serragli, Paolo; Paladino, Domenico

2012-04-01

The aging of most of the components of the National transmission and distribution system can potentially influence the reliability of power supply in a Medium Voltage (MV) network. In order to prevent possible dangerous situations, selected diagnostic indicators on electrical parts exploiting reliable and potentially low-cost sensors are required. This paper presents results concerning two main research activities regarding the development and application of innovative optical sensors for the diagnostic of MV electrical components. The first concerns a multi-sensor prototype for the detection of pre-discharges in MV switchboards: it is the combination of three different types of sensors operating simultaneously to detect incipient failure and to reduce the occurrence of false alarms. The system is real-time controlled by an embedded computer through a LabView interface. The second activity refers to a diagnostic tool to provide significant real-time information about early aging of MV/Low Voltage (LV) transformers by means of its vibration fingerprint. A miniaturized Optical Micro-Electro-Mechanical System (MEMS) based unit has been assembled for vibration measurements, wireless connected to a remote computer and controlled via LabView interface. Preliminary comparative tests were carried out with standard piezoelectric accelerometers on a conventional MV/LV test transformer under open circuit and in short-circuited configuration.

Refinements in the short-circuit technique and its application to active potassium transport across the cecropia midgut.

PubMed

Wood, J L; Moreton, R B

1978-12-01

1. The conventional, two-electrode method for measuring potential difference across an epithelium is subject to error due to potential gradients caused by current flow in the bathing medium. Mathematical analysis shows that the error in measuring short-circuit current is proportional to the resistivity of the bathing medium and to the separation of the two recording electrodes. It is particularly serious for the insect larval midgut, where the resistivity of the medium is high, and that of the tissue is low. 2. A system has been devised, which uses a third recording electrode to monitor directly the potential gradient in the bathing medium. By suitable electrical connexions, the gradient can be automatically compensated, leaving a residual error which depends on the thickness of the tissue, but not on the electrode separation. Because the thicknesses of most epithelia are smaller than the smallest practical electrode spacing, this error is smaller than that inherent in a two-electrode system. 3. Since voltage-gradients are automatically compensated, it is possible to obtain continuous readings of potential and current. A 'voltage-clamp' circuit is described, which allows the time-course of the short-circuit current to be studied. 4.The three-electrode system has been used to study the larval midgut of Hyalophora cecropia. The average results from five experiments were: initial potential difference (open-circuit): 98+/-11 mV (S.E.M.); short-circuit current at time 60 min: 498+/-160 microA cm=2; 'steady-state' resistance at 60 min: 150+/-26 omega cm2. The current is equivalent to a net potassium transport of 18.6 mu-equiv cm-2 h-1. 5. The electrical parameters of the midgut change rapidly with time. The potential difference decays with a half-time of about 158 min, the resistance increases with a half-time of about 16 min, and the short-circuit current decays as the sum of two exponential terms, with half-times of about 16 and 158 min respectively. In addition, potential and short-circuit current show transient responses to step changes. 6. The properties of the midgut are compared with those of other transporting epithelia, and their dependence on the degree of folding of the preparation is discussed. Their time-dependence is discussed in the context of changes in potassium content of the tissue, and the implications for measurements depending on the assumption of a steady state are outlined.

30 CFR 75.906 - Trailing cables for mobile equipment, ground wires, and ground check wires.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Trailing cables for mobile equipment, ground... Underground Low- and Medium-Voltage Alternating Current Circuits § 75.906 Trailing cables for mobile equipment, ground wires, and ground check wires. [Statutory Provisions] Trailing cables for mobile equipment shall...

30 CFR 75.906 - Trailing cables for mobile equipment, ground wires, and ground check wires.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Trailing cables for mobile equipment, ground... Underground Low- and Medium-Voltage Alternating Current Circuits § 75.906 Trailing cables for mobile equipment, ground wires, and ground check wires. [Statutory Provisions] Trailing cables for mobile equipment shall...

30 CFR 75.906 - Trailing cables for mobile equipment, ground wires, and ground check wires.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Trailing cables for mobile equipment, ground... Underground Low- and Medium-Voltage Alternating Current Circuits § 75.906 Trailing cables for mobile equipment, ground wires, and ground check wires. [Statutory Provisions] Trailing cables for mobile equipment shall...

Method of determining the open circuit voltage of a battery in a closed circuit

DOEpatents

Brown, William E.

1980-01-01

The open circuit voltage of a battery which is connected in a closed circuit is determined without breaking the circuit or causing voltage upsets therein. The closed circuit voltage across the battery and the current flowing through it are determined under normal load and then a fractional change is made in the load and the new current and voltage values determined. The open circuit voltage is then calculated, according to known principles, from the two sets of values.

Over-voltage protection system and method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chi, Song; Dong, Dong; Lai, Rixin

An over-voltage protection system includes an electronic valve connected across two terminals of a circuit and an over-voltage detection circuit connected across one of the plurality of semiconductor devices for detecting an over-voltage across the circuit. The electronic valve includes a plurality of semiconductor devices connected in series. The over-voltage detection circuit includes a voltage divider circuit connected to a break-over diode in a way to provide a representative low voltage to the break-over diode and an optocoupler configured to receive a current from the break-over diode when the representative low voltage exceeds a threshold voltage of the break-over diodemore » indicating an over-voltage condition. The representative low voltage provided to the break-over diode represents a voltage across the one semiconductor device. A plurality of self-powered gate drive circuits are connected to the plurality of semiconductor devices, wherein the plurality of self-powered gate drive circuits receive over-voltage triggering pulses from the optocoupler during the over-voltage condition and switch on the plurality of semiconductor devices to bypass the circuit.« less

Multifunctional Logic Gate Controlled by Supply Voltage

NASA Technical Reports Server (NTRS)

Stoica, Adrian; Zebulum, Ricardo

2005-01-01

A complementary metal oxide/semiconductor (CMOS) electronic circuit functions as a NAND gate at a power-supply potential (V(sub dd)) of 3.3 V and as NOR gate for V(sub dd) = 1.8 V. In the intermediate V(sub dd) range of 1.8 to 3.3 V, this circuit performs a function intermediate between NAND and NOR with degraded noise margin. Like the circuit of the immediately preceding article, this circuit serves as a demonstration of the evolutionary approach to design of polymorphic electronics -- a technological discipline that emphasizes evolution of the design of a circuit to perform different analog and/or digital functions under different conditions. In this instance, the different conditions are different values of V(sub dd).

Mental Representation of Circuit Diagrams.

DTIC Science & Technology

1984-10-15

transformer serves to change the voltage of an AC supply, that a particular combination of transitors acts as a flip-flop, and so forth. Fundamentally, this... statistically signi ’P,. differences between skill levels, the size of the effect as a pro., an of variability would probably not be very great. Thus

Mental Representation of Circuit Diagrams: Individual Differences in Procedural Knowledge.

DTIC Science & Technology

1983-12-01

operation. One may know, for example, that a transformer serves to change the voltage of an AC supply, that a particular combination of transitors acts as a...and error measures with respect to overall performance. Even if a large 3-1-- sample could provide statistically significant differences between skill

Fast-responding short circuit protection system with self-reset for use in circuit supplied by DC power

NASA Technical Reports Server (NTRS)

Burns, Bradley M. (Inventor); Blalock, Norman N. (Inventor)

2011-01-01

A short circuit protection system includes an inductor, a switch, a voltage sensing circuit, and a controller. The switch and inductor are electrically coupled to be in series with one another. A voltage sensing circuit is coupled across the switch and the inductor. A controller, coupled to the voltage sensing circuit and the switch, opens the switch when a voltage at the output terminal of the inductor transitions from above a threshold voltage to below the threshold voltage. The controller closes the switch when the voltage at the output terminal of the inductor transitions from below the threshold voltage to above the threshold voltage.

30 CFR 75.901 - Protection of low- and medium-voltage three-phase circuits used underground.

Code of Federal Regulations, 2014 CFR

2014-07-01

... the generator frame and between the wye-connected transformer secondary and the transformer frame when an isolation transformer(s) is used and the generator is supplying power to the other equipment; (see... and the generator frame when an auto-transformer is used. (see Figure III in Appendix A to subpart J...

30 CFR 75.901 - Protection of low- and medium-voltage three-phase circuits used underground.

Code of Federal Regulations, 2012 CFR

2012-07-01

... the generator frame and between the wye-connected transformer secondary and the transformer frame when an isolation transformer(s) is used and the generator is supplying power to the other equipment; (see... and the generator frame when an auto-transformer is used. (see Figure III in Appendix A to subpart J...

30 CFR 75.901 - Protection of low- and medium-voltage three-phase circuits used underground.

Code of Federal Regulations, 2013 CFR

2013-07-01

... the generator frame and between the wye-connected transformer secondary and the transformer frame when an isolation transformer(s) is used and the generator is supplying power to the other equipment; (see... and the generator frame when an auto-transformer is used. (see Figure III in Appendix A to subpart J...

30 CFR 75.901 - Protection of low- and medium-voltage three-phase circuits used underground.

Code of Federal Regulations, 2010 CFR

2010-07-01

... the generator frame and between the wye-connected transformer secondary and the transformer frame when an isolation transformer(s) is used and the generator is supplying power to the other equipment; (see... and the generator frame when an auto-transformer is used. (see Figure III in Appendix A to subpart J...

30 CFR 75.901 - Protection of low- and medium-voltage three-phase circuits used underground.

Code of Federal Regulations, 2011 CFR

2011-07-01

... the generator frame and between the wye-connected transformer secondary and the transformer frame when an isolation transformer(s) is used and the generator is supplying power to the other equipment; (see... and the generator frame when an auto-transformer is used. (see Figure III in Appendix A to subpart J...

30 CFR 77.902-3 - Attachment of ground conductors and ground check wires to equipment frames; use of separate...

Code of Federal Regulations, 2012 CFR

2012-07-01

... SAFETY STANDARDS, SURFACE COAL MINES AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.902-3 Attachment of ground conductors and ground check wires to... equipment receiving power from resistance grounded systems, separate connections shall be used. ...

30 CFR 77.902-3 - Attachment of ground conductors and ground check wires to equipment frames; use of separate...

Code of Federal Regulations, 2014 CFR

2014-07-01

... SAFETY STANDARDS, SURFACE COAL MINES AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.902-3 Attachment of ground conductors and ground check wires to... equipment receiving power from resistance grounded systems, separate connections shall be used. ...

30 CFR 77.902-3 - Attachment of ground conductors and ground check wires to equipment frames; use of separate...

Code of Federal Regulations, 2013 CFR

2013-07-01

... SAFETY STANDARDS, SURFACE COAL MINES AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.902-3 Attachment of ground conductors and ground check wires to... equipment receiving power from resistance grounded systems, separate connections shall be used. ...

Four-Quadrant Analog Multipliers Using G4-FETs

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad; Blalock, Benjamin; Christoloveanu, Sorin; Chen, Suheng; Akarvardar, Kerem

2006-01-01

Theoretical analysis and some experiments have shown that the silicon-on-insulator (SOI) 4-gate transistors known as G4-FETs can be used as building blocks of four-quadrant analog voltage multiplier circuits. Whereas a typical prior analog voltage multiplier contains between six and 10 transistors, it is possible to construct a superior voltage multiplier using only four G4-FETs. A G4-FET is a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET). It can be regarded as a single transistor having four gates, which are parts of a structure that affords high functionality by enabling the utilization of independently biased multiple inputs. The structure of a G4-FET of the type of interest here (see Figure 1) is that of a partially-depleted SOI MOSFET with two independent body contacts, one on each side of the channel. The drain current comprises of majority charge carriers flowing from one body contact to the other that is, what would otherwise be the side body contacts of the SOI MOSFET are used here as the end contacts [the drain (D) and the source (S)] of the G4-FET. What would otherwise be the source and drain of the SOI MOSFET serve, in the G4-FET, as two junction-based extra gates (JG1 and JG2), which are used to squeeze the channel via reverse-biased junctions as in a JFET. The G4-FET also includes a polysilicon top gate (G1), which plays the same role as does the gate in an accumulation-mode MOSFET. The substrate emulates a fourth MOS gate (G2). By making proper choices of G4-FET device parameters in conjunction with bias voltages and currents, one can design a circuit in which two input gate voltages (Vin1,Vin2) control the conduction characteristics of G4-FETs such that the output voltage (Vout) closely approximates a value proportional to the product of the input voltages. Figure 2 depicts two such analog multiplier circuits. In each circuit, there is the following: The input and output voltages are differential, The multiplier core consists of four G4- FETs (M1 through M4) biased by a constant current sink (Ibias), and The G4-FETs in two pairs are loaded by two identical resistors (RL), which convert a differential output current to a differential output voltage. The difference between the two circuits stems from their input and bias configurations. In each case, provided that the input voltages remain within their design ranges as determined by considerations of bias, saturation, and cutoff, then the output voltage is nominally given by Vout = kVin1Vin2, where k is a constant gain factor that depends on the design parameters and is different for the two circuits. In experimental versions of these circuits constructed using discrete G4- FETs and resistors, multiplication of voltages in all four quadrants (that is, in all four combinations of input polarities) was demonstrated, and deviations of the output voltages from linear dependence on the input voltages were found to amount to no more than a few percent. It is anticipated that in fully integrated versions of these circuits, the deviations from linearity will be made considerably smaller through better matching of devices.

30 CFR 75.902-1 - Maximum voltage ground check circuits.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Maximum voltage ground check circuits. 75.902-1... Alternating Current Circuits § 75.902-1 Maximum voltage ground check circuits. The maximum voltage used for such ground check circuits shall not exceed 40 volts. ...

30 CFR 75.902-1 - Maximum voltage ground check circuits.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Maximum voltage ground check circuits. 75.902-1... Alternating Current Circuits § 75.902-1 Maximum voltage ground check circuits. The maximum voltage used for such ground check circuits shall not exceed 40 volts. ...

30 CFR 75.802 - Protection of high-voltage circuits extending underground.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Protection of high-voltage circuits extending...-Voltage Distribution § 75.802 Protection of high-voltage circuits extending underground. (a) Except as provided in paragraph (b) of this section, high-voltage circuits extending underground and supplying...

30 CFR 75.802 - Protection of high-voltage circuits extending underground.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Protection of high-voltage circuits extending...-Voltage Distribution § 75.802 Protection of high-voltage circuits extending underground. (a) Except as provided in paragraph (b) of this section, high-voltage circuits extending underground and supplying...

30 CFR 75.802 - Protection of high-voltage circuits extending underground.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Protection of high-voltage circuits extending...-Voltage Distribution § 75.802 Protection of high-voltage circuits extending underground. (a) Except as provided in paragraph (b) of this section, high-voltage circuits extending underground and supplying...

High voltage DC power supply

DOEpatents

Droege, T.F.

1989-12-19

A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively. 7 figs.

High voltage DC power supply

DOEpatents

Droege, Thomas F.

1989-01-01

A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively.

Teaching Electric Fences: The Physics Behind the Brainiac Video

NASA Astrophysics Data System (ADS)

Vollmer, Michael

2016-11-01

In many states, electric fences are used to prevent animals from leaving a designated area, for example for grazing. They are quite well known by most students and can therefore serve as daily-life examples of electric circuits. Besides helping to grasp the ideas of Kirchhoff's laws for voltages and currents in circuits according to loop and junction rules, they can also serve as introduction to the topic of conduction of electricity by humans and respective effects (in contrast to electric fences, the latter can also be studied experimentally in the classroom). Here we provide background information on the circuit diagrams of electrical fences that also explains the so-called Brainiac YouTube videos on the topic. While electric fences are designed not to be dangerous to humans or animals due to the short duration of the electrical pulses, students and teachers are strongly discouraged from attempting to replicate the scenes enacted in the video.

Modeling recombination processes and predicting energy conversion efficiency of dye sensitized solar cells from first principles

NASA Astrophysics Data System (ADS)

Ma, Wei; Meng, Sheng

2014-03-01

We present a set of algorithms based on solo first principles calculations, to accurately calculate key properties of a DSC device including sunlight harvest, electron injection, electron-hole recombination, and open circuit voltages. Two series of D- π-A dyes are adopted as sample dyes. The short circuit current can be predicted by calculating the dyes' photo absorption, and the electron injection and recombination lifetime using real-time time-dependent density functional theory (TDDFT) simulations. Open circuit voltage can be reproduced by calculating energy difference between the quasi-Fermi level of electrons in the semiconductor and the electrolyte redox potential, considering the influence of electron recombination. Based on timescales obtained from real time TDDFT dynamics for excited states, the estimated power conversion efficiency of DSC fits nicely with the experiment, with deviation below 1-2%. Light harvesting efficiency, incident photon-to-electron conversion efficiency and the current-voltage characteristics can also be well reproduced. The predicted efficiency can serve as either an ideal limit for optimizing photovoltaic performance of a given dye, or a virtual device that closely mimicking the performance of a real device under different experimental settings.

Double buffer circuit for the characterization of piezoelectric nanogenerators based on ZnO nanowires

NASA Astrophysics Data System (ADS)

Nadaud, Kevin; Morini, François; Dahiya, Abhishek S.; Justeau, Camille; Boubenia, Sarah; Rajeev, Kiron P.; Alquier, Daniel; Poulin-Vittrant, Guylaine

2018-02-01

The accurate and precise measurements of voltage and current output generated by a nanogenerator (NG) are crucial to design the rectifying/harvesting circuit and to evaluate correctly the amount of energy provided by a NG. High internal impedance of the NGs (several MΩ) is the main limiting factor for designing circuits to measure the open circuit voltage. In this paper, we present the influence of the characterization circuit used to measure the generated voltage of piezoelectric NGs. The proposed circuit consists of a differential amplifier which permits us to measure the voltage provided by the NG without applying any parasitic bias to it. The proposed circuit is compared to a commercial electrometer and a homemade buffer circuit based on a voltage follower circuit to show its interest. For the proposed double buffer circuit, no asymmetric behavior has been noticed contrary to the measurements made using a simple buffer circuit and a Keithley electrometer. The proposed double buffer circuit is thus suitable to measure the NG voltage in a transparent way, as an ideal voltage probe should do.

Low power, scalable multichannel high voltage controller

DOEpatents

Stamps, James Frederick [Livermore, CA; Crocker, Robert Ward [Fremont, CA; Yee, Daniel Dadwa [Dublin, CA; Dils, David Wright [Fort Worth, TX

2006-03-14

A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

Low power, scalable multichannel high voltage controller

DOEpatents

Stamps, James Frederick [Livermore, CA; Crocker, Robert Ward [Fremont, CA; Yee, Daniel Dadwa [Dublin, CA; Dils, David Wright [Fort Worth, TX

2008-03-25

A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

30 CFR 75.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Fail safe ground check circuits on high-voltage... High-Voltage Distribution § 75.803 Fail safe ground check circuits on high-voltage resistance grounded... shall include a fail safe ground check circuit to monitor continuously the grounding circuit to assure...

30 CFR 75.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Fail safe ground check circuits on high-voltage... High-Voltage Distribution § 75.803 Fail safe ground check circuits on high-voltage resistance grounded... shall include a fail safe ground check circuit to monitor continuously the grounding circuit to assure...

30 CFR 75.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Fail safe ground check circuits on high-voltage... High-Voltage Distribution § 75.803 Fail safe ground check circuits on high-voltage resistance grounded... shall include a fail safe ground check circuit to monitor continuously the grounding circuit to assure...

30 CFR 75.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Fail safe ground check circuits on high-voltage... High-Voltage Distribution § 75.803 Fail safe ground check circuits on high-voltage resistance grounded... shall include a fail safe ground check circuit to monitor continuously the grounding circuit to assure...

Multijunction high voltage concentrator solar cells

NASA Technical Reports Server (NTRS)

Valco, G. J.; Kapoor, V. J.; Evans, J. C.; Chai, A.-T.

1981-01-01

The standard integrated circuit technology has been developed to design and fabricate new innovative planar multi-junction solar cell chips for concentrated sunlight applications. This 1 cm x 1 cm cell consisted of several voltage generating regions called unit cells which were internally connected in series within a single chip resulting in high open circuit voltages. Typical open-circuit voltages of 3.6 V and short-circuit currents of 90 ma were obtained at 80 AM1 suns. A dramatic increase in both short circuit current and open circuit voltage with increased light levels was observed.

Lightning Overvoltage on Low-Voltage Distribution System

NASA Astrophysics Data System (ADS)

Michishita, Koji

The portion of the faults of a medium-voltage line, cause by lightning, tends to increase with often reaching beyond 30%. However, due to the recent progress of the lightning protection design, the number of faults has decreased to 1/3 of that at 30 years ago. As for the low-voltage distribution line, the fault rate has been estimated primarily, although the details of the overvoltages have not been studied yet. For the further development of highly information-oriented society, improvement of reliability of electric power supply to the appliance in a low-voltage customer will be socially expected. Therefore, it is important to establish effective lightning protection design of the low-voltage distribution system, defined to be composed of lines having mutual interaction on the customers' electric circuits, such as a low-voltage distribution line, an antenna line and a telecommunication line. In this report, the author interprets the recent research on the lightning overvoltage on a low-voltage distribution system.

ELECTRICAL CIRCUITS USING COLD-CATHODE TRIODE VALVES

DOEpatents

Goulding, F.S.

1957-11-26

An electrical circuit which may be utilized as a pulse generator or voltage stabilizer is presented. The circuit employs a cold-cathode triode valve arranged to oscillate between its on and off stages by the use of selected resistance-capacitance time constant components in the plate and trigger grid circuits. The magnitude of the d-c voltage applied to the trigger grid circuit effectively controls the repetition rate of the output pulses. In the voltage stabilizer arrangement the d-c control voltage is a portion of the supply voltage and the rectified output voltage is substantially constant.

30 CFR 77.902-1 - Fail safe ground check circuits; maximum voltage.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Fail safe ground check circuits; maximum voltage. 77.902-1 Section 77.902-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... ground check circuits; maximum voltage. The maximum voltage used for ground check circuits under § 77.902...

30 CFR 77.902-1 - Fail safe ground check circuits; maximum voltage.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Fail safe ground check circuits; maximum voltage. 77.902-1 Section 77.902-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... ground check circuits; maximum voltage. The maximum voltage used for ground check circuits under § 77.902...

30 CFR 77.803-1 - Fail safe ground check circuits; maximum voltage.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Fail safe ground check circuits; maximum... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.803-1 Fail safe ground check circuits; maximum voltage. The maximum voltage used for ground check circuits under § 77.803 shall not...

30 CFR 75.803-1 - Maximum voltage ground check circuits.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Maximum voltage ground check circuits. 75.803-1 Section 75.803-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE... § 75.803-1 Maximum voltage ground check circuits. The maximum voltage used for ground check circuits...

30 CFR 77.803-1 - Fail safe ground check circuits; maximum voltage.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Fail safe ground check circuits; maximum... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.803-1 Fail safe ground check circuits; maximum voltage. The maximum voltage used for ground check circuits under § 77.803 shall not...

30 CFR 75.803-1 - Maximum voltage ground check circuits.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Maximum voltage ground check circuits. 75.803-1 Section 75.803-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE... § 75.803-1 Maximum voltage ground check circuits. The maximum voltage used for ground check circuits...

Sequential circuit design for radiation hardened multiple voltage integrated circuits

DOEpatents

Clark, Lawrence T [Phoenix, AZ; McIver, III, John K.

2009-11-24

The present invention includes a radiation hardened sequential circuit, such as a bistable circuit, flip-flop or other suitable design that presents substantial immunity to ionizing radiation while simultaneously maintaining a low operating voltage. In one embodiment, the circuit includes a plurality of logic elements that operate on relatively low voltage, and a master and slave latches each having storage elements that operate on a relatively high voltage.

80-GHz MMIC HEMT Voltage-Controlled Oscillator

NASA Technical Reports Server (NTRS)

Samoska, Lorene; Radisic, Vesna; Micovic, Miro; Hu, Ming; Janke, Paul; Ngo, Catherine; Nguyen, Loi

2003-01-01

A voltage-controlled oscillator (VCO) that operates in the frequency range from 77.5 to 83.5 GHz has been constructed in the form of a monolithic microwave integrated circuit (MMIC) that includes high-electron-mobility transistors (HEMTs). This circuit is a prototype of electronically tunable signal sources in the 75-to-110-GHz range, needed for communication, imaging, and automotive radar applications, among others. This oscillator (see Figure 1) includes two AlInAs/GaInAs/InP HEMTs. One HEMT serves mainly as an oscillator gain element. The other HEMT serves mainly as a varactor for controlling the frequency: the frequency-control element is its gate-to-source capacitance, which is varied by changing its gate supply voltage. The gain HEMT is biased for class-A operation (meaning that current is conducted throughout the oscillation cycle). Grounded coplanar waveguides are used as impedance-matching transmission lines, the input and output matching being chosen to sustain oscillation and maximize output power. Air bridges are placed at discontinuities to suppress undesired slot electromagnetic modes. A high density of vias is necessary for suppressing a parallel-plate electromagnetic mode that is undesired because it can propagate energy into the MMIC substrate. Previous attempts at constructing HEMT-based oscillators yielded circuits with relatively low levels of output power and narrow tuning ranges. For example, one HEMT VCO reported in the literature had an output power of 7 dBm (.5 mW) and a tuning range 2-GHz wide centered approximately at a nominal frequency of 77 GHz. In contrast, as shown in Figure 2, the present MMIC HEMT VCO puts out a power of 12.5 dBm (.18 mW) or more over the 6-GHz-wide frequency range from 77.5 to 83.5 GHz

30 CFR Appendix A to Subpart J of... - Appendix A to Subpart J of Part 75

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Appendix A to Subpart J of Part 75 A Appendix A to Subpart J of Part 75 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR... Medium-Voltage Alternating Current Circuits Pt. 75, Subpt. J, App. A Appendix A to Subpart J of Part 75...

Enhancing Centrifugal Separation With Electrophoresis

NASA Technical Reports Server (NTRS)

Herrmann, F. T.

1986-01-01

Separation of biological cells by coil-planet centrifuge enhanced by electrophoresis. By itself, coil-planet centrifuge offers relatively gentle method of separating cells under low centrifugal force in physiological medium that keeps cells alive. With addition of voltage gradient to separation column of centrifuge, separation still gentle but faster and more complete. Since separation apparatus contains no rotary seal, probability of leakage, contamination, corrosion, and short circuits reduced.

Ferroresonant flux coupled battery charger

NASA Technical Reports Server (NTRS)

McLyman, Colonel W. T. (Inventor)

1987-01-01

A battery charger for incorporation into an electric-powered vehicle is disclosed. The charger includes a ferroresonant voltage-regulating circuit for providing an output voltage proportional to the frequency of an input AC voltage. A high frequency converter converts a DC voltage supplied, for example, from a rectifier connected to a standard AC outlet, to a controlled frequency AC voltage which is supplied to the input of the ferroresonant circuit. The ferroresonant circuit includes an output, a saturable core transformer connected across the output, and a first linear inductor and a capacitor connected in series across the saturable core transformer and tuned to resonate at the third harmonic of the AC voltage from the high frequency converter. The ferroresonant circuit further includes a second linear inductor connected between the input of the ferroresonant circuit and the saturable core transformer. The output voltage from the ferroresonant circuit is rectified and applied across a pair of output terminals adapted to be connected to the battery to be charged. A feedback circuit compares the voltage across the output terminals with a reference voltage and controls the frequency of the AC voltage produced by the high frequency converter to maintain the voltage across the output terminals at a predetermined value. The second linear inductor provides a highly reactive load in the event of a fault across the output terminals to render the charger short-circuit proof.

Triple voltage dc-to-dc converter and method

DOEpatents

Su, Gui-Jia

2008-08-05

A circuit and method of providing three dc voltage buses and transforming power between a low voltage dc converter and a high voltage dc converter, by coupling a primary dc power circuit and a secondary dc power circuit through an isolation transformer; providing the gating signals to power semiconductor switches in the primary and secondary circuits to control power flow between the primary and secondary circuits and by controlling a phase shift between the primary voltage and the secondary voltage. The primary dc power circuit and the secondary dc power circuit each further comprising at least two tank capacitances arranged in series as a tank leg, at least two resonant switching devices arranged in series with each other and arranged in parallel with the tank leg, and at least one voltage source arranged in parallel with the tank leg and the resonant switching devices, said resonant switching devices including power semiconductor switches that are operated by gating signals. Additional embodiments having a center-tapped battery on the low voltage side and a plurality of modules on both the low voltage side and the high voltage side are also disclosed for the purpose of reducing ripple current and for reducing the size of the components.

Design of an improved RCD buffer circuit for full bridge circuit

NASA Astrophysics Data System (ADS)

Yang, Wenyan; Wei, Xueye; Du, Yongbo; Hu, Liang; Zhang, Liwei; Zhang, Ou

2017-05-01

In the full bridge inverter circuit, when the switch tube suddenly opened or closed, the inductor current changes rapidly. Due to the existence of parasitic inductance of the main circuit. Therefore, the surge voltage between drain and source of the switch tube can be generated, which will have an impact on the switch and the output voltage. In order to ab sorb the surge voltage. An improve RCD buffer circuit is proposed in the paper. The peak energy will be absorbed through the buffer capacitor of the circuit. The part energy feedback to the power supply, another part release through the resistor in the form of heat, and the circuit can absorb the voltage spikes. This paper analyzes the process of the improved RCD snubber circuit, According to the specific parameters of the main circuit, a reasonable formula for calculating the resistance capacitance is given. A simulation model will be modulated in Multisim, which compared the waveform of tube voltage and the output waveform of the circuit without snubber circuit with the improved RCD snubber circuit. By comparing and analyzing, it is proved that the improved buffer circuit can absorb surge voltage. Finally, experiments are demonstrated to validate that the correctness of the RC formula and the improved RCD snubber circuit.

MULTIPLIER CIRCUIT

DOEpatents

Thomas, R.E.

1959-01-20

An electronic circuit is presented for automatically computing the product of two selected variables by multiplying the voltage pulses proportional to the variables. The multiplier circuit has a plurality of parallel resistors of predetermined values connected through separate gate circults between a first input and the output terminal. One voltage pulse is applied to thc flrst input while the second voltage pulse is applied to control circuitry for the respective gate circuits. Thc magnitude of the second voltage pulse selects the resistors upon which the first voltage pulse is imprcssed, whereby the resultant output voltage is proportional to the product of the input voltage pulses

Offset-free rail-to-rail derandomizing peak detect-and-hold circuit

DOEpatents

DeGeronimo, Gianluigi; O'Connor, Paul; Kandasamy, Anand

2003-01-01

A peak detect-and-hold circuit eliminates errors introduced by conventional amplifiers, such as common-mode rejection and input voltage offset. The circuit includes an amplifier, three switches, a transistor, and a capacitor. During a detect-and-hold phase, a hold voltage at a non-inverting in put terminal of the amplifier tracks an input voltage signal and when a peak is reached, the transistor is switched off, thereby storing a peak voltage in the capacitor. During a readout phase, the circuit functions as a unity gain buffer, in which the voltage stored in the capacitor is provided as an output voltage. The circuit is able to sense signals rail-to-rail and can readily be modified to sense positive, negative, or peak-to-peak voltages. Derandomization may be achieved by using a plurality of peak detect-and-hold circuits electrically connected in parallel.

Zero-voltage DC/DC converter with asymmetric pulse-width modulation for DC micro-grid system

NASA Astrophysics Data System (ADS)

Lin, Bor-Ren

2018-04-01

This paper presents a zero-voltage switching DC/DC converter for DC micro-grid system applications. The proposed circuit includes three half-bridge circuit cells connected in primary-series and secondary-parallel in order to lessen the voltage rating of power switches and current rating of rectifier diodes. Thus, low voltage stress of power MOSFETs can be adopted for high-voltage input applications with high switching frequency operation. In order to achieve low switching losses and high circuit efficiency, asymmetric pulse-width modulation is used to turn on power switches at zero voltage. Flying capacitors are used between each circuit cell to automatically balance input split voltages. Therefore, the voltage stress of each power switch is limited at Vin/3. Finally, a prototype is constructed and experiments are provided to demonstrate the circuit performance.

Charging-choke circuit with a crowbar for precision control of voltage

DOEpatents

Praeg, W.F.

1975-11-25

The operation of a circuit using a charging choke to obtain dc voltages is improved by constructing the circuit to be capable of producing a higher voltage than the desired value and crowbarring the charging choke when the load voltage reaches the desired value.

Direct coupling of pulsed radio frequency and pulsed high power in novel pulsed power system for plasma immersion ion implantation.

PubMed

Gong, Chunzhi; Tian, Xiubo; Yang, Shiqin; Fu, Ricky K Y; Chu, Paul K

2008-04-01

A novel power supply system that directly couples pulsed high voltage (HV) pulses and pulsed 13.56 MHz radio frequency (rf) has been developed for plasma processes. In this system, the sample holder is connected to both the rf generator and HV modulator. The coupling circuit in the hybrid system is composed of individual matching units, low pass filters, and voltage clamping units. This ensures the safe operation of the rf system even when the HV is on. The PSPICE software is utilized to optimize the design of circuits. The system can be operated in two modes. The pulsed rf discharge may serve as either the seed plasma source for glow discharge or high-density plasma source for plasma immersion ion implantation (PIII). The pulsed high-voltage glow discharge is induced when a rf pulse with a short duration or a larger time interval between the rf and HV pulses is used. Conventional PIII can also be achieved. Experiments conducted on the new system confirm steady and safe operation.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aeloiza, Eddy C.; Burgos, Rolando P.

A step-down AC/AC converter for use in an electric distribution system includes at least one chopper circuit for each one of a plurality of phases of the AC power, each chopper circuit including a four-quadrant switch coupled in series between primary and secondary sides of the chopper circuit and a current-bidirectional two-quadrant switch coupled between the secondary side of the chopper circuit and a common node. Each current-bidirectional two-quadrant switch is oriented in the same direction, with respect to the secondary side of the corresponding chopper circuit and the common node. The converter further includes a control circuit configured tomore » pulse-width-modulate control inputs of the switches, to convert a first multiphase AC voltage at the primary sides of the chopper circuits to a second multiphase AC voltage at the secondary sides of the chopper circuits, the second multiphase AC voltage being lower in voltage than the first multiphase AC voltage.« less

Study of switching electric circuits with DC hybrid breaker, one stage

NASA Astrophysics Data System (ADS)

Niculescu, T.; Marcu, M.; Popescu, F. G.

2016-06-01

The paper presents a method of extinguishing the electric arc that occurs between the contacts of direct current breakers. The method consists of using an LC type extinguishing group to be optimally sized. From this point of view is presented a theoretical approach to the phenomena that occurs immediately after disconnecting the load and the specific diagrams are drawn. Using these, the elements extinguishing group we can choose. At the second part of the paper there is presented an analyses of the circuit switching process by decomposing the process in particular time sequences. For every time interval there was conceived a numerical simulation model in MATLAB-SIMULINK medium which integrates the characteristic differential equation and plots the capacitor voltage variation diagram and the circuit dumping current diagram.

Similarity between the response of memristive and memcapacitive circuits subjected to ramped voltage

NASA Astrophysics Data System (ADS)

Kanygin, Mikhail A.; Katkov, Mikhail V.; Pershin, Yuriy V.

2017-07-01

We report a similar feature in the response of resistor-memristor and capacitor-memcapacitor circuits with threshold-type memory devices driven by triangular waveform voltage. In both cases, the voltage across the memory device is stabilized during the switching of the memory device state. While in the memristive circuit this feature is observed when the applied voltage changes in one direction, the memcapacitive circuit with a ferroelectric memcapacitor demonstrates the voltage stabilization effect at both sweep directions. The discovered behavior of capacitor-memcapacitor circuit is also demonstrated experimentally. We anticipate that our observation can be used in the design of electronic circuits with emergent memory devices as well as in the identification and characterization of memory effects in threshold-type memory devices.

Driver circuit for solid state light sources

DOEpatents

Palmer, Fred; Denvir, Kerry; Allen, Steven

2016-02-16

A driver circuit for a light source including one or more solid state light sources, a luminaire including the same, and a method of so driving the solid state light sources are provided. The driver circuit includes a rectifier circuit that receives an alternating current (AC) input voltage and provides a rectified AC voltage. The driver circuit also includes a switching converter circuit coupled to the light source. The switching converter circuit provides a direct current (DC) output to the light source in response to the rectified AC voltage. The driver circuit also includes a mixing circuit, coupled to the light source, to switch current through at least one solid state light source of the light source in response to each of a plurality of consecutive half-waves of the rectified AC voltage.

Controllable Threshold Voltage in Organic Complementary Logic Circuits with an Electron-Trapping Polymer and Photoactive Gate Dielectric Layer.

PubMed

Dao, Toan Thanh; Sakai, Heisuke; Nguyen, Hai Thanh; Ohkubo, Kei; Fukuzumi, Shunichi; Murata, Hideyuki

2016-07-20

We present controllable and reliable complementary organic transistor circuits on a PET substrate using a photoactive dielectric layer of 6-[4'-(N,N-diphenylamino)phenyl]-3-ethoxycarbonylcoumarin (DPA-CM) doped into poly(methyl methacrylate) (PMMA) and an electron-trapping layer of poly(perfluoroalkenyl vinyl ether) (Cytop). Cu was used for a source/drain electrode in both the p-channel and n-channel transistors. The threshold voltage of the transistors and the inverting voltage of the circuits were reversibly controlled over a wide range under a program voltage of less than 10 V and under UV light irradiation. At a program voltage of -2 V, the inverting voltage of the circuits was tuned to be at nearly half of the supply voltage of the circuit. Consequently, an excellent balance between the high and low noise margins (NM) was produced (64% of NMH and 68% of NML), resulting in maximum noise immunity. Furthermore, the programmed circuits showed high stability, such as a retention time of over 10(5) s for the inverter switching voltage. Our findings bring about a flexible, simple way to obtain robust, high-performance organic circuits using a controllable complementary transistor inverter.

Polymer solar cells with enhanced open-circuit voltage and efficiency

NASA Astrophysics Data System (ADS)

Chen, Hsiang-Yu; Hou, Jianhui; Zhang, Shaoqing; Liang, Yongye; Yang, Guanwen; Yang, Yang; Yu, Luping; Wu, Yue; Li, Gang

2009-11-01

Following the development of the bulk heterojunction structure, recent years have seen a dramatic improvement in the efficiency of polymer solar cells. Maximizing the open-circuit voltage in a low-bandgap polymer is one of the critical factors towards enabling high-efficiency solar cells. Study of the relation between open-circuit voltage and the energy levels of the donor/acceptor in bulk heterojunction polymer solar cells has stimulated interest in modifying the open-circuit voltage by tuning the energy levels of polymers. Here, we show that the open-circuit voltage of polymer solar cells constructed based on the structure of a low-bandgap polymer, PBDTTT, can be tuned, step by step, using different functional groups, to achieve values as high as 0.76 V. This increased open-circuit voltage combined with a high short-circuit current density results in a polymer solar cell with a power conversion efficiency as high as 6.77%, as certified by the National Renewable Energy Laboratory.

Brushless exciters using a high temperature superconducting field winding

DOEpatents

Garces, Luis Jose [Schenectady, NY; Delmerico, Robert William [Clifton Park, NY; Jansen, Patrick Lee [Scotia, NY; Parslow, John Harold [Scotia, NY; Sanderson, Harold Copeland [Tribes Hill, NY; Sinha, Gautam [Chesterfield, MO

2008-03-18

A brushless exciter for a synchronous generator or motor generally includes a stator and a rotor rotatably disposed within the stator. The rotor has a field winding and a voltage rectifying bridge circuit connected in parallel to the field winding. A plurality of firing circuits are connected the voltage rectifying bridge circuit. The firing circuit is configured to fire a signal at an angle of less than 90.degree. or at an angle greater than 90.degree.. The voltage rectifying bridge circuit rectifies the AC voltage to excite or de-excite the field winding.

RF lockout circuit for electronic locking system

NASA Astrophysics Data System (ADS)

Becker, Earl M., Jr.; Miller, Allen

1991-02-01

An electronics lockout circuit was invented that includes an antenna adapted to receive radio frequency signals from a transmitter, and a radio frequency detector circuit which converts the radio frequency signals into a first direct current voltage indicative of the relative strength of the field resulting from the radio frequency signals. The first direct current voltage is supplied to a trigger circuit which compares this direct current voltage to an adjustable direct current reference voltage. This provides a second direct current voltage at the output whenever the amplitude of the first direct current voltage exceeds the amplitude of the reference voltage provided by the comparator circuit. This is supplied to a disconnect relay circuit which, upon receiving a signal from the electronic control unit of an electronic combination lock during the time period at which the second direct current voltage is present, isolates the door strike coil of a security door from the electronic control unit. This prevents signals falsely generated by the electronic control unit because of radio frequency signals in the vicinity of the electronic control unit energizing the door strike coil and accidentally opening a security door.

Synchronous Half-Wave Rectifier

NASA Technical Reports Server (NTRS)

Rippel, Wally E.

1989-01-01

Synchronous rectifying circuit behaves like diode having unusually low voltage drop during forward-voltage half cycles. Circuit particularly useful in power supplies with potentials of 5 Vdc or less, where normal forward-voltage drops in ordinary diodes unacceptably large. Fabricated as monolithic assembly or as hybrid. Synchronous half-wave rectifier includes active circuits to attain low forward voltage drop and high rectification efficiency.

Development and Analysis of Closed Cycle Circulator Elements.

DTIC Science & Technology

1980-05-01

circuits are mounted on cards accessible through a hinged rear panel for service or adjustments. Cards may be removed in groups of 3 for servicing without...voltage signal is processed in such a way that it became linearly related to velocity of the gas flow. The use of these modules ensures the frequency...most important idiagnostic to be measured optically. This test is broken down into two categories: a medium homogeneity category *1 in which

Response characteristic of high-speed on/off valve with double voltage driving circuit

NASA Astrophysics Data System (ADS)

Li, P. X.; Su, M.; Zhang, D. B.

2017-07-01

High-speed on/off valve, an important part of turbocharging system, its quick response has a direct impact on the turbocharger pressure cycle. The methods of improving the response characteristic of high speed on/off valve include increasing the magnetic force of armature and the voltage, decreasing the mass and current of coil. The less coil number of turns, the solenoid force is smaller. The special armature structure and the magnetic material will raise cost. In this paper a new scheme of double voltage driving circuit is investigated, in which the original driving circuit of high-speed on/off valve is replaced by double voltage driving circuit. The detailed theoretical analysis and simulations were carried out on the double voltage driving circuit, it showed that the switching time and delay time of the valve respectively are 3.3ms, 5.3ms, 1.9ms and 1.8ms. When it is driven by the double voltage driving circuit, the switching time and delay time of this valve are reduced, optimizing its response characteristic. By the comparison related factors (such as duty cycle or working frequency) about influences on response characteristic, the superior of double voltage driving circuit has been further confirmed.

DIFFERENTIAL FAULT SENSING CIRCUIT

DOEpatents

Roberts, J.H.

1961-09-01

A differential fault sensing circuit is designed for detecting arcing in high-voltage vacuum tubes arranged in parallel. A circuit is provided which senses differences in voltages appearing between corresponding elements likely to fault. Sensitivity of the circuit is adjusted to some level above which arcing will cause detectable differences in voltage. For particular corresponding elements, a group of pulse transformers are connected in parallel with diodes connected across the secondaries thereof so that only voltage excursions are transmitted to a thyratron which is biased to the sensitivity level mentioned.

30 CFR 75.800-3 - Testing, examination and maintenance of circuit breakers; procedures.

Code of Federal Regulations, 2010 CFR

2010-07-01

... High-Voltage Distribution § 75.800-3 Testing, examination and maintenance of circuit breakers; procedures. (a) Circuit breakers and their auxiliary devices protecting underground high-voltage circuits...

Active-Matrix Organic Light Emission Diode Pixel Circuit for Suppressing and Compensating for the Threshold Voltage Degradation of Hydrogenated Amorphous Silicon Thin Film Transistors

NASA Astrophysics Data System (ADS)

Shin, Hee-Sun; Lee, Won-Kyu; Park, Sang-Guen; Kuk, Seung-Hee; Han, Min-Koo

2009-03-01

A new hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) pixel circuit for active-matrix organic light emission diodes (AM-OLEDs), which significantly compensates the OLED current degradation by memorizing the threshold voltage of driving TFT and suppresses the threshold voltage shift of a-Si:H TFTs by negative bias annealing, is proposed and fabricated. During the first half of each frame, the driving TFT of the proposed pixel circuit supplies current to the OLED, which is determined by modified data voltage in the compensation scheme. The proposed pixel circuit was able to compensate the threshold voltage shift of the driving TFT as well as the OLED. During the remaining half of each frame, the proposed pixel circuit induces the recovery of the threshold voltage degradation of a-Si:H TFTs owing to the negative bias annealing. The experimental results show that the proposed pixel circuit was able to successfully compensate for the OLED current degradation and suppress the threshold voltage degradation of the driving TFT.

MOSFET analog memory circuit achieves long duration signal storage

NASA Technical Reports Server (NTRS)

1966-01-01

Memory circuit maintains the signal voltage at the output of an analog signal amplifier when the input signal is interrupted or removed. The circuit uses MOSFET /Metal Oxide Semiconductor Field Effect Transistor/ devices as voltage-controlled switches, triggered by an external voltage-sensing device.

A review of the thermoelectronic laser energy converter (TELEC) program at Lewis Research Center

NASA Technical Reports Server (NTRS)

Alger, D. L.; Manista, E. J.; Thompson, R. W.

1978-01-01

The investigation of the Thermoelectronic Laser Energy Converter (TELEC) concept began with a feasibility study of a 1 megawatt sized TELEC system. The TELEC was to use either cesium vapor or hydrogen as the plasma medium. The cesium vapor TELEC appears to be the more practical device studied with an overall calculated conversion efficiency of greater than 48%. Following this study, a small TELEC cell was fabricated which demonstrated the conversion of a small amount of laser power to electrical power. The cell developed a short circuit current of 0.7 amperes and an open circuit voltage, as extrapolated from volt-ampere curves, of about 1.5 volts.

Characterization and snubbing of a bidirectional MCT in a resonant ac link converter

NASA Technical Reports Server (NTRS)

Lee, Tony; Elbuluk, Malik E.; Zinger, Donald S.

1993-01-01

The MOS-Controlled Thyristor (MCT) is emerging as a powerful switch that combines the better characteristics of existing power devices. A study of switching stresses on an MCT switch under zero voltage resonant switching is presented. The MCT is used as a bidirectional switch in an ac/ac pulse density modulated inverter for induction motor drive. Current and voltage spikes are observed and analyzed with variations in the timing of the switching. Different snubber circuit configurations are under investigation to minimize the effect of these transients. The results will be extended to study and test the MCT switching in a medium power (5 hp) induction motor drive.

Electrical characteristics of spark generators for automotive ignition

NASA Technical Reports Server (NTRS)

Brode, R B; Randolph, D W; Silsbee, F B

1927-01-01

This paper reports the results of an extensive program of measurements on 11 ignition systems differing widely in type. The results serve primarily to give representative data on the electric and magnetic constants of such systems, and on the secondary voltage produced by them under various conditions of speed, timing, shunting resistance, etc. They also serve to confirm certain of the theoretical formulas which have been proposed to connect the performance of such systems with their electrical constants, and to indicate the extent to which certain simplified model circuits duplicate the performance of the actual apparatus.

Dual-mode MOS SOI nanoscale transistor serving as a building block for optical communication between blocks

NASA Astrophysics Data System (ADS)

Bendayan, Michael; Sabo, Roi; Zolberg, Roee; Mandelbaum, Yaakov; Chelly, Avraham; Karsenty, Avi

2017-02-01

We developed a new type of silicon MOSFET Quantum Well transistor, coupling both electronic and optical properties which should overcome the indirect silicon bandgap constraint, and serve as a future light emitting device in the range 0.8-2μm, as part of a new building block in integrated circuits allowing ultra-high speed processors. Such Quantum Well structure enables discrete energy levels for light recombination. Model and simulations of both optical and electric properties are presented pointing out the influence of the channel thickness and the drain voltage on the optical emission spectrum.

Thermocouple-Signal-Conditioning Circuit

NASA Technical Reports Server (NTRS)

Simon, Richard A.

1991-01-01

Thermocouple-signal-conditioning circuit acting in conjunction with thermocouple, exhibits electrical behavior of voltage in series with resistance. Combination part of input bridge circuit of controller. Circuit configured for either of two specific applications by selection of alternative resistances and supply voltages. Includes alarm circuit detecting open circuit in thermocouple and provides off-scale output to signal malfunctions.

Exact Magnetic Diffusion Solutions for Magnetohydrodynamic Code Verification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miller, D S

In this paper, the authors present several new exact analytic space and time dependent solutions to the problem of magnetic diffusion in R-Z geometry. These problems serve to verify several different elements of an MHD implementation: magnetic diffusion, external circuit time integration, current and voltage energy sources, spatially dependent conductivities, and ohmic heating. The exact solutions are shown in comparison with 2D simulation results from the Ares code.

A 190 mV start-up and 59.2% efficiency CMOS gate boosting voltage doubler charge pump in 0.18 µm standard CMOS process for energy harvesting

NASA Astrophysics Data System (ADS)

Yoshida, Minori; Miyaji, Kousuke

2018-04-01

A start-up charge pump circuit for an extremely low input voltage (V IN) is proposed and demonstrated. The proposed circuit uses an inverter level shifter to generate a 2V IN voltage swing to the gate of both main NMOS and PMOS power transistors in a charge pump to reduce the channel resistance. The proposed circuit is fully implemented in a standard 0.18 µm CMOS process, and the measurement result shows that a minimum input voltage of 190 mV is achieved and output power increases by 181% compared with the conventional forward-body-bias scheme at a 300 mV input voltage. The proposed scheme achieves a maximum efficiency of 59.2% when the input voltage is 390 mV and the output current is 320 nA. The proposed circuit is suitable as a start-up circuit in ultralow power energy harvesting power management applications to boost-up from below threshold voltage.

30 CFR 75.800-4 - Testing, examination, and maintenance of circuit breakers; record.

Code of Federal Regulations, 2010 CFR

2010-07-01

... Underground High-Voltage Distribution § 75.800-4 Testing, examination, and maintenance of circuit breakers... adjustment of all circuit breakers protecting high-voltage circuits which enter any underground area of the...

Battery Cell By-Pass Circuit

NASA Technical Reports Server (NTRS)

Mumaw, Susan J. (Inventor); Evers, Jeffrey (Inventor); Craig, Calvin L., Jr. (Inventor); Walker, Stuart D. (Inventor)

2001-01-01

The invention is a circuit and method of limiting the charging current voltage from a power supply net work applied to an individual cell of a plurality of cells making up a battery being charged in series. It is particularly designed for use with batteries that can be damaged by overcharging, such as Lithium-ion type batteries. In detail. the method includes the following steps: 1) sensing the actual voltage level of the individual cell; 2) comparing the actual voltage level of the individual cell with a reference value and providing an error signal representative thereof; and 3) by-passing the charging current around individual cell necessary to keep the individual cell voltage level generally equal a specific voltage level while continuing to charge the remaining cells. Preferably this is accomplished by by-passing the charging current around the individual cell if said actual voltage level is above the specific voltage level and allowing the charging current to the individual cell if the actual voltage level is equal or less than the specific voltage level. In the step of bypassing the charging current, the by-passed current is transferred at a proper voltage level to the power supply. The by-pass circuit a voltage comparison circuit is used to compare the actual voltage level of the individual cell with a reference value and to provide an error signal representative thereof. A third circuit, designed to be responsive to the error signal, is provided for maintaining the individual cell voltage level generally equal to the specific voltage level. Circuitry is provided in the third circuit for bypassing charging current around the individual cell if the actual voltage level is above the specific voltage level and transfers the excess charging current to the power supply net work. The circuitry also allows charging of the individual cell if the actual voltage level is equal or less than the specific voltage level.

Logarithmic circuit with wide dynamic range

NASA Technical Reports Server (NTRS)

Wiley, P. H.; Manus, E. A. (Inventor)

1978-01-01

A circuit deriving an output voltage that is proportional to the logarithm of a dc input voltage susceptible to wide variations in amplitude includes a constant current source which forward biases a diode so that the diode operates in the exponential portion of its voltage versus current characteristic, above its saturation current. The constant current source includes first and second, cascaded feedback, dc operational amplifiers connected in negative feedback circuit. An input terminal of the first amplifier is responsive to the input voltage. A circuit shunting the first amplifier output terminal includes a resistor in series with the diode. The voltage across the resistor is sensed at the input of the second dc operational feedback amplifier. The current flowing through the resistor is proportional to the input voltage over the wide range of variations in amplitude of the input voltage.

High temperature charge amplifier for geothermal applications

DOEpatents

Lindblom, Scott C.; Maldonado, Frank J.; Henfling, Joseph A.

2015-12-08

An amplifier circuit in a multi-chip module includes a charge to voltage converter circuit, a voltage amplifier a low pass filter and a voltage to current converter. The charge to voltage converter receives a signal representing an electrical charge and generates a voltage signal proportional to the input signal. The voltage amplifier receives the voltage signal from the charge to voltage converter, then amplifies the voltage signal by the gain factor to output an amplified voltage signal. The lowpass filter passes low frequency components of the amplified voltage signal and attenuates frequency components greater than a cutoff frequency. The voltage to current converter receives the output signal of the lowpass filter and converts the output signal to a current output signal; wherein an amplifier circuit output is selectable between the output signal of the lowpass filter and the current output signal.

Low temperature co-fired ceramic packaging of CMOS capacitive sensor chip towards cell viability monitoring.

PubMed

Halonen, Niina; Kilpijärvi, Joni; Sobocinski, Maciej; Datta-Chaudhuri, Timir; Hassinen, Antti; Prakash, Someshekar B; Möller, Peter; Abshire, Pamela; Kellokumpu, Sakari; Lloyd Spetz, Anita

2016-01-01

Cell viability monitoring is an important part of biosafety evaluation for the detection of toxic effects on cells caused by nanomaterials, preferably by label-free, noninvasive, fast, and cost effective methods. These requirements can be met by monitoring cell viability with a capacitance-sensing integrated circuit (IC) microchip. The capacitance provides a measurement of the surface attachment of adherent cells as an indication of their health status. However, the moist, warm, and corrosive biological environment requires reliable packaging of the sensor chip. In this work, a second generation of low temperature co-fired ceramic (LTCC) technology was combined with flip-chip bonding to provide a durable package compatible with cell culture. The LTCC-packaged sensor chip was integrated with a printed circuit board, data acquisition device, and measurement-controlling software. The packaged sensor chip functioned well in the presence of cell medium and cells, with output voltages depending on the medium above the capacitors. Moreover, the manufacturing of microfluidic channels in the LTCC package was demonstrated.

Wide-temperature integrated operational amplifier

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad (Inventor); Levanas, Greg (Inventor); Chen, Yuan (Inventor); Cozy, Raymond S. (Inventor); Greenwell, Robert (Inventor); Terry, Stephen (Inventor); Blalock, Benjamin J. (Inventor)

2009-01-01

The present invention relates to a reference current circuit. The reference circuit comprises a low-level current bias circuit, a voltage proportional-to-absolute temperature generator for creating a proportional-to-absolute temperature voltage (VPTAT), and a MOSFET-based constant-IC regulator circuit. The MOSFET-based constant-IC regulator circuit includes a constant-IC input and constant-IC output. The constant-IC input is electrically connected with the VPTAT generator such that the voltage proportional-to-absolute temperature is the input into the constant-IC regulator circuit. Thus the constant-IC output maintains the constant-IC ratio across any temperature range.

Fill factor in organic solar cells can exceed the Shockley-Queisser limit

NASA Astrophysics Data System (ADS)

Trukhanov, Vasily A.; Bruevich, Vladimir V.; Paraschuk, Dmitry Yu.

2015-06-01

The ultimate efficiency of organic solar cells (OSC) is under active debate. The solar cell efficiency is calculated from the current-voltage characteristic as a product of the open-circuit voltage (VOC), short-circuit current (JSC), and the fill factor (FF). While the factors limiting VOC and JSC for OSC were extensively studied, the ultimate FF for OSC is scarcely explored. Using numerical drift-diffusion modeling, we have found that the FF in OSC can exceed the Shockley-Queisser limit (SQL) established for inorganic p-n junction solar cells. Comparing charge generation and recombination in organic donor-acceptor bilayer heterojunction and inorganic p-n junction, we show that such distinctive properties of OSC as interface charge generation and heterojunction facilitate high FF, but the necessary condition for FF exceeding the SQL in OSC is field-dependence of charge recombination at the donor-acceptor interface. These findings can serve as a guideline for further improvement of OSC.

Fully solar-powered photoelectrochemical conversion for simultaneous energy storage and chemical sensing.

PubMed

Wang, Yongcheng; Tang, Jing; Peng, Zheng; Wang, Yuhang; Jia, Dingsi; Kong, Biao; Elzatahry, Ahmed A; Zhao, Dongyuan; Zheng, Gengfeng

2014-06-11

We report the development of a multifunctional, solar-powered photoelectrochemical (PEC)-pseudocapacitive-sensing material system for simultaneous solar energy conversion, electrochemical energy storage, and chemical detection. The TiO2 nanowire/NiO nanoflakes and the Si nanowire/Pt nanoparticle composites are used as photoanodes and photocathodes, respectively. A stable open-circuit voltage of ∼0.45 V and a high pseudocapacitance of up to ∼455 F g(-1) are obtained, which also exhibit a repeating charging-discharging capability. The PEC-pseudocapacitive device is fully solar powered, without the need of any external power supply. Moreover, this TiO2 nanowire/NiO nanoflake composite photoanode exhibits excellent glucose sensitivity and selectivity. Under the sun light illumination, the PEC photocurrent shows a sensitive increase upon different glucose additions. Meanwhile in the dark, the open-circuit voltage of the charged pseudocapacitor also exhibits a corresponding signal over glucose analyte, thus serving as a full solar-powered energy conversion-storage-utilization system.

Auxiliary resonant DC tank converter

DOEpatents

Peng, Fang Z.

2000-01-01

An auxiliary resonant dc tank (ARDCT) converter is provided for achieving soft-switching in a power converter. An ARDCT circuit is coupled directly across a dc bus to the inverter to generate a resonant dc bus voltage, including upper and lower resonant capacitors connected in series as a resonant leg, first and second dc tank capacitors connected in series as a tank leg, and an auxiliary resonant circuit comprising a series combination of a resonant inductor and a pair of auxiliary switching devices. The ARDCT circuit further includes first clamping means for holding the resonant dc bus voltage to the dc tank voltage of the tank leg, and second clamping means for clamping the resonant dc bus voltage to zero during a resonant period. The ARDCT circuit resonantly brings the dc bus voltage to zero in order to provide a zero-voltage switching opportunity for the inverter, then quickly rebounds the dc bus voltage back to the dc tank voltage after the inverter changes state. The auxiliary switching devices are turned on and off under zero-current conditions. The ARDCT circuit only absorbs ripples of the inverter dc bus current, thus having less current stress. In addition, since the ARDCT circuit is coupled in parallel with the dc power supply and the inverter for merely assisting soft-switching of the inverter without participating in real dc power transmission and power conversion, malfunction and failure of the tank circuit will not affect the functional operation of the inverter; thus a highly reliable converter system is expected.

PRECISION TIME-DELAY CIRCUIT

DOEpatents

Creveling, R.

1959-03-17

A tine-delay circuit which produces a delay time in d. The circuit a capacitor, an te back resistance, connected serially with the anode of the diode going to ground. At the start of the time delay a negative stepfunction is applied to the series circuit and initiates a half-cycle transient oscillatory voltage terminated by a transient oscillatory voltage of substantially higher frequency. The output of the delay circuit is taken at the junction of the inductor and diode where a sudden voltage rise appears after the initiation of the higher frequency transient oscillations.

Three-Dimensional Flexible Complementary Metal-Oxide-Semiconductor Logic Circuits Based On Two-Layer Stacks of Single-Walled Carbon Nanotube Networks.

PubMed

Zhao, Yudan; Li, Qunqing; Xiao, Xiaoyang; Li, Guanhong; Jin, Yuanhao; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan

2016-02-23

We have proposed and fabricated stable and repeatable, flexible, single-walled carbon nanotube (SWCNT) thin film transistor (TFT) complementary metal-oxide-semiconductor (CMOS) integrated circuits based on a three-dimensional (3D) structure. Two layers of SWCNT-TFT devices were stacked, where one layer served as n-type devices and the other one served as p-type devices. On the basis of this method, it is able to save at least half of the area required to construct an inverter and make large-scale and high-density integrated CMOS circuits easier to design and manufacture. The 3D flexible CMOS inverter gain can be as high as 40, and the total noise margin is more than 95%. Moreover, the input and output voltage of the inverter are exactly matched for cascading. 3D flexible CMOS NOR, NAND logic gates, and 15-stage ring oscillators were fabricated on PI substrates with high performance as well. Stable electrical properties of these circuits can be obtained with bending radii as small as 3.16 mm, which shows that such a 3D structure is a reliable architecture and suitable for carbon nanotube electrical applications in complex flexible and wearable electronic devices.

Module Five: Relationships of Current, Voltage, and Resistance; Basic Electricity and Electronics Individualized Learning System.

ERIC Educational Resources Information Center

Bureau of Naval Personnel, Washington, DC.

This module covers the relationships between current and voltage; resistance in a series circuit; how to determine the values of current, voltage, resistance, and power in resistive series circuits; the effects of source internal resistance; and an introduction to the troubleshooting of series circuits. This module is divided into five lessons:…

Apparatus for Controlling Low Power Voltages in Space Based Processing Systems

NASA Technical Reports Server (NTRS)

Petrick, David J. (Inventor)

2017-01-01

A low power voltage control circuit for use in space missions includes a switching device coupled between an input voltage and an output voltage. The switching device includes a control input coupled to an enable signal, wherein the control input is configured to selectively turn the output voltage on or off based at least in part on the enable signal. A current monitoring circuit is coupled to the output voltage and configured to produce a trip signal, wherein the trip signal is active when a load current flowing through the switching device is determined to exceed a predetermined threshold and is inactive otherwise. The power voltage control circuit is constructed of space qualified components.

Charge regulation circuit

DOEpatents

Ball, Don G.

1992-01-01

A charge regulation circuit provides regulation of an unregulated voltage supply in the range of 0.01%. The charge regulation circuit is utilized in a preferred embodiment in providing regulated voltage for controlling the operation of a laser.

A study on stimulation of DC high voltage power of LCC series parallel resonant in projectile velocity measurement system

NASA Astrophysics Data System (ADS)

Lu, Dong-dong; Gu, Jin-liang; Luo, Hong-e.; Xia, Yan

2017-10-01

According to specific requirements of the X-ray machine system for measuring velocity of outfield projectile, a DC high voltage power supply system is designed for the high voltage or the smaller current. The system comprises: a series resonant circuit is selected as a full-bridge inverter circuit; a high-frequency zero-current soft switching of a high-voltage power supply is realized by PWM output by STM32; a nanocrystalline alloy transformer is chosen as a high-frequency booster transformer; and the related parameters of an LCC series-parallel resonant are determined according to the preset parameters of the transformer. The concrete method includes: a LCC series parallel resonant circuit and a voltage doubling circuit are stimulated by using MULTISM and MATLAB; selecting an optimal solution and an optimal parameter of all parts after stimulation analysis; and finally verifying the correctness of the parameter by stimulation of the whole system. Through stimulation analysis, the output voltage of the series-parallel resonant circuit gets to 10KV in 28s: then passing through the voltage doubling circuit, the output voltage gets to 120KV in one hour. According to the system, the wave range of the output voltage is so small as to provide the stable X-ray supply for the X-ray machine for measuring velocity of outfield projectile. It is fast in charging and high in efficiency.

Series resonance inverter with triggered vacuum gaps

NASA Astrophysics Data System (ADS)

Damstra, Geert C.; Zhang, X.

1994-05-01

Series resonance inverters based on semi-conductor switching elements are well-known and have a wide range of application, mainly for lower voltages. For high voltage application many switching elements have to be put in series to obtain sufficient blocking voltage. Voltage grinding and multiple gate control elements are needed. There is much experience with the triggered vacuum gaps as high voltage/high current single shot elements, for example in reignition circuits for synthetic circuit breaker tests. These elements have a blocking voltage of 50 - 100 kV and are triggerable by a light fiber control device. A prototype inverter has been developed that generates 0.1 Hz, 30 kV AC voltages with a flat top for tests on cables and capacitors of many micro farads fed from a low voltage supply of about 600 V. Only two TVG elements are needed to switch the resonant circuit alternatively on the positive or negative supply. The resonant circuit itself consists of the capacitance of the testobject and a high quality inductor that determines the frequency and the peak current of the voltage reversing process.

Voltage-Boosting Driver For Switching Regulator

NASA Technical Reports Server (NTRS)

Trump, Ronald C.

1990-01-01

Driver circuit assures availability of 10- to 15-V gate-to-source voltage needed to turn on n-channel metal oxide/semiconductor field-effect transistor (MOSFET) acting as switch in switching voltage regulator. Includes voltage-boosting circuit efficiently providing gate voltage 10 to 15 V above supply voltage. Contains no exotic parts and does not require additional power supply. Consists of NAND gate and dual voltage booster operating in conjunction with pulse-width modulator part of regulator.

30 CFR 77.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Fail safe ground check circuits on high-voltage... WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.803 Fail safe ground check..., resistance grounded systems shall include a fail safe ground check circuit or other no less effective device...

30 CFR 77.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Fail safe ground check circuits on high-voltage... WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.803 Fail safe ground check..., resistance grounded systems shall include a fail safe ground check circuit or other no less effective device...

30 CFR 77.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Fail safe ground check circuits on high-voltage... WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.803 Fail safe ground check..., resistance grounded systems shall include a fail safe ground check circuit or other no less effective device...

30 CFR 77.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Fail safe ground check circuits on high-voltage... WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.803 Fail safe ground check..., resistance grounded systems shall include a fail safe ground check circuit or other no less effective device...

Physical mechanisms for reduction of the breakdown voltage in the circuit of a rod lightning protector with an opening microswitch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bobrov, Yu. K.; Zhuravkov, I. V.; Ostapenko, E. I.

2010-12-15

The effect of air gap breakdown voltage reduction in the circuit with an opening microswitch is substantiated from the physical point of view. This effect can be used to increase the efficiency of lightning protection system with a rod lightning protector. The processes which take place in the electric circuit of a lightning protector with a microswitch during a voltage breakdown are investigated. Openings of the microswitch are shown to lead to resonance overvoltages in the dc circuit and, as a result, efficient reduction in the breakdown voltage in a lightning protector-thundercloud air gap.

Hybrid circuit achieves pulse regeneration with low power drain

NASA Technical Reports Server (NTRS)

Cancro, C. A.

1965-01-01

Hybrid tunnel diode-transistor circuit provides a solid-state, low power drain pulse regenerator, frequency limiter, or gated oscillator. When the feedback voltage exceeds the input voltage, the circuit functions as a pulse normalizer or a frequency limiter. If the circuit is direct coupled, it functions as a gated oscillator.

High voltage MOSFET switching circuit

DOEpatents

McEwan, Thomas E.

1994-01-01

The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

Surge Protection in Low-Voltage AC Power Circuits: An Anthology

NASA Astrophysics Data System (ADS)

Martzloff, F. D.

2002-10-01

The papers included in this part of the Anthology provide basic information on the propagation of surges in low-voltage AC power circuits. The subject was approached by a combination of experiments and theoretical considerations. One important distinction is made between voltage surges and current surges. Historically, voltage surges were the initial concern. After the introduction and widespread use of current-diverting surge-protective devices at the point-of-use, the propagation of current surges became a significant factor. The papers included in this part reflect this dual dichotomy of voltage versus current and impedance mismatch effects versus simple circuit theory.

AC to DC Bridgeless Boost Converter for Ultra Low Input Energy Harvesting

NASA Astrophysics Data System (ADS)

Dawam, A. H. A.; Muhamad, M.

2018-03-01

This paper presents design of circuit which converts low input AC voltage to a higher output DC voltage. A buck-boost topology and boost topology are combined to condition cycle of an AC input voltage. the unique integration of a combining circuit of buck-boost and boost circuit have been proposed in order to introduce a new direct ac-dc power converter topology without conventional diode bridge rectifier. The converter achieved to convert a milli-volt scale of input AC voltage into a volt scale of output DC voltages which is from 400mV to 3.3V.

Static DC to DC Power Conditioning-Active Ripple Filter, 1 MHZ DC to DC Conversion, and Nonlinear Analysis. Ph.D. Thesis; [voltage regulation and conversion circuitry for spacecraft power supplies

NASA Technical Reports Server (NTRS)

Sander, W. A., III

1973-01-01

Dc to dc static power conditioning systems on unmanned spacecraft have as their inputs highly fluctuating dc voltages which they condition to regulated dc voltages. These input voltages may be less than or greater than the desired regulated voltages. The design of two circuits which address specific problems in the design of these power conditioning systems and a nonlinear analysis of one of the circuits are discussed. The first circuit design is for a nondissipative active ripple filter which uses an operational amplifier to amplify and cancel the sensed ripple voltage. A dc to dc converter operating at a switching frequency of 1 MHz is the second circuit discussed. A nonlinear analysis of the type of dc to dc converter utilized in designing the 1 MHz converter is included.

Symmetric voltage-controlled variable resistance

NASA Technical Reports Server (NTRS)

Vanelli, J. C.

1978-01-01

Feedback network makes resistance of field-effect transistor (FET) same for current flowing in either direction. It combines control voltage with source and load voltages to give symmetric current/voltage characteristics. Since circuit produces same magnitude output voltage for current flowing in either direction, it introduces no offset in presense of altering polarity signals. It is therefore ideal for sensor and effector circuits in servocontrol systems.

Molecular interfaces for plasmonic hot electron photovoltaics

NASA Astrophysics Data System (ADS)

Pelayo García de Arquer, F.; Mihi, Agustín; Konstantatos, Gerasimos

2015-01-01

The use of self-assembled monolayers (SAMs) to improve and tailor the photovoltaic performance of plasmonic hot-electron Schottky solar cells is presented. SAMs allow the simultaneous control of open-circuit voltage, hot-electron injection and short-circuit current. To that end, a plurality of molecule structural parameters can be adjusted: SAM molecule's length can be adjusted to control plasmonic hot electron injection. Modifying SAMs dipole moment allows for a precise tuning of the open-circuit voltage. The functionalization of the SAM can also be selected to modify short-circuit current. This allows the simultaneous achievement of high open-circuit voltages (0.56 V) and fill-factors (0.58), IPCE above 5% at the plasmon resonance and maximum power-conversion efficiencies of 0.11%, record for this class of devices.The use of self-assembled monolayers (SAMs) to improve and tailor the photovoltaic performance of plasmonic hot-electron Schottky solar cells is presented. SAMs allow the simultaneous control of open-circuit voltage, hot-electron injection and short-circuit current. To that end, a plurality of molecule structural parameters can be adjusted: SAM molecule's length can be adjusted to control plasmonic hot electron injection. Modifying SAMs dipole moment allows for a precise tuning of the open-circuit voltage. The functionalization of the SAM can also be selected to modify short-circuit current. This allows the simultaneous achievement of high open-circuit voltages (0.56 V) and fill-factors (0.58), IPCE above 5% at the plasmon resonance and maximum power-conversion efficiencies of 0.11%, record for this class of devices. Electronic supplementary information (ESI) available: Contact-potential differentiometry measurements, FTIR characterization, performance statistics and gold devices. See DOI: 10.1039/c4nr06356b

Module Twelve: Series AC Resistive-Reactive Circuits; Basic Electricity and Electronics Individualized Learning System.

ERIC Educational Resources Information Center

Bureau of Naval Personnel, Washington, DC.

The module covers series circuits which contain both resistive and reactive components and methods of solving these circuits for current, voltage, impedance, and phase angle. The module is divided into six lessons: voltage and impedance in AC (alternating current) series circuits, vector computations, rectangular and polar notation, variational…

High voltage MOSFET switching circuit

DOEpatents

McEwan, T.E.

1994-07-26

The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET. 2 figs.

Thermally-induced voltage alteration for integrated circuit analysis

DOEpatents

Cole, Jr., Edward I.

2000-01-01

A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing an integrated circuit (IC) either from a device side of the IC or through the IC substrate to locate any open-circuit or short-circuit defects therein. The TIVA apparatus uses constant-current biasing of the IC while scanning a focused laser beam over electrical conductors (i.e. a patterned metallization) in the IC to produce localized heating of the conductors. This localized heating produces a thermoelectric potential due to the Seebeck effect in any conductors with open-circuit defects and a resistance change in any conductors with short-circuit defects, both of which alter the power demand by the IC and thereby change the voltage of a source or power supply providing the constant-current biasing. By measuring the change in the supply voltage and the position of the focused and scanned laser beam over time, any open-circuit or short-circuit defects in the IC can be located and imaged. The TIVA apparatus can be formed in part from a scanning optical microscope, and has applications for qualification testing or failure analysis of ICs.

Development and Simulation of Increased Generation on a Secondary Circuit of a Microgrid

NASA Astrophysics Data System (ADS)

Reyes, Karina

As fossil fuels are depleted and their environmental impacts remain, other sources of energy must be considered to generate power. Renewable sources, for example, are emerging to play a major role in this regard. In parallel, electric vehicle (EV) charging is evolving as a major load demand. To meet reliability and resiliency goals demanded by the electricity market, interest in microgrids are growing as a distributed energy resource (DER). In this thesis, the effects of intermittent renewable power generation and random EV charging on secondary microgrid circuits are analyzed in the presence of a controllable battery in order to characterize and better understand the dynamics associated with intermittent power production and random load demands in the context of the microgrid paradigm. For two reasons, a secondary circuit on the University of California, Irvine (UCI) Microgrid serves as the case study. First, the secondary circuit (UC-9) is heavily loaded and an integral component of a highly characterized and metered microgrid. Second, a unique "next-generation" distributed energy resource has been deployed at the end of the circuit that integrates photovoltaic power generation, battery storage, and EV charging. In order to analyze this system and evaluate the impact of the DER on the secondary circuit, a model was developed to provide a real-time load flow analysis. The research develops a power management system applicable to similarly integrated systems. The model is verified by metered data obtained from a network of high resolution electric meters and estimated load data for the buildings that have unknown demand. An increase in voltage is observed when the amount of photovoltaic power generation is increased. To mitigate this effect, a constant power factor is set. Should the real power change dramatically, the reactive power is changed to mitigate voltage fluctuations.

60 V tolerance full symmetrical switch for battery monitor IC

NASA Astrophysics Data System (ADS)

Zhang, Qidong; Yang, Yintang; Chai, Changchun

2017-06-01

For stacked battery monitoring IC high speed and high precision voltage acquisition requirements, this paper introduces a kind of symmetrical type high voltage switch circuit. This kind of switch circuit uses the voltage following structure, which eliminates the leakage path of input signals. At the same time, this circuit adopts a high speed charge pump structure, in any case the input signal voltage is higher than the supply voltage, it can fast and accurately turn on high voltage MOS devices, and convert the battery voltage to an analog to digital converter. The proposed high voltage full symmetry switch has been implemented in a 0.18 μm BCD process; simulated and measured results show that the proposed switch can always work properly regardless of the polarity of the voltage difference between the input signal ports and an input signal higher than the power supply. Project supported by the National Natural Science Foundation of China (No. 61334003).

Gallium arsenide pilot line for high performance components

NASA Astrophysics Data System (ADS)

1990-01-01

The Gallium Arsenide Pilot Line for High Performance Components (Pilot Line III) is to develop a facility for the fabrication of GaAs logic and memory chips. The first thirty months of this contract are now complete, and this report covers the period from March 27 through September 24, 1989. Similar to the PT-2M SRAM function for memories, the six logic circuits of PT-2L and PT-2M have served their functions as stepping stones toward the custom, standard cell, and cell array logic circuits. All but one of these circuits was right first time; the remaining circuit had a layout error due to a bug in the design rule checker that has since been fixed. The working devices all function over the full temperature range from -55 to 125 C. They all comfortably meet the 200 MHz requirement. They do not solidly conform to the required input and output voltage levels, particularly Vih. It is known that these circuits were designed with the older design models and that they came from an era where the DFET thresholds were often not on target.

An open circuit voltage equation enabling separation of cathode and anode polarization resistances of ceria electrolyte based solid oxide fuel cells

NASA Astrophysics Data System (ADS)

Zhang, Yanxiang; Chen, Yu; Yan, Mufu

2017-07-01

The open circuit voltage (OCV) of solid oxide fuel cells is generally overestimated by the Nernst equation and the Wagner equation, due to the polarization losses at electrodes. Considering both the electronic conduction of electrolyte and the electrode polarization losses, we express the OCV as an implicit function of the characteristic oxygen pressure of electrolyte (p* [atm], at which the electronic and ionic conductivities are the same), and the relative polarization resistance of electrodes (rc = Rc/Ri and ra = Ra/Ri, where Ri/c/a [Ωcm2] denotes the ionic resistance of electrolyte, and the polarization resistances of cathode and anode, respectively). This equation approaches to the Wagner equation when the electrodes are highly active (rc and ra → 0), and approaches to the Nernst equation when the electrolyte is a purely ionic conductor (p* → 0). For the fuel cells whose OCV is well below the prediction of the Wagner equation, for example with thin doped ceria electrolyte, it is demonstrated that the combination of OCV and impedance spectroscopy measurements allows the determination of p*, Rc and Ra. This equation can serve as a simple yet powerful tool to study the internal losses in the cell under open circuit condition.

High frequency capacitor-diode voltage multiplier dc-dc converter development

NASA Technical Reports Server (NTRS)

Kisch, J. J.; Martinelli, R. M.

1977-01-01

A power conditioner was developed which used a capacitor diode voltage multiplier to provide a high voltage without the use of a step-up transformer. The power conditioner delivered 1200 Vdc at 100 watts and was operated from a 120 Vdc line. The efficiency was in excess of 90 percent. The component weight was 197 grams. A modified boost-add circuit was used for the regulation. A short circuit protection circuit was used which turns off the drive circuit upon a fault condition, and recovers within 5 ms after removal of the short. High energy density polysulfone capacitors and high speed diodes were used in the multiplier circuit.

A new AC driving circuit for a top emission AMOLED

NASA Astrophysics Data System (ADS)

Yongwen, Zhang; Wenbin, Chen; Haohan, Liu

2013-05-01

A new voltage programmed pixel circuit with top emission design for active-matrix organic light-emitting diode (AMOLED) displays is presented and verified by HSPICE simulations. The proposed pixel circuit consists of five poly-Si TFTs, and can effectively compensate for the threshold voltage variation of the driving TFT. Meanwhile, the proposed pixel circuit offers an AC driving mode for the OLED by the two adjacent pulse voltage sources, which can suppress the degradation of the OLED. Moreover, a high contrast ratio can be achieved by the proposed pixel circuit since the OLED does not emit any light except for the emission period.

46 CFR 111.05-1 - Purpose.

Code of Federal Regulations, 2011 CFR

2011-10-01

... requirements for the grounding of electric systems, circuits, and equipment. Note: Circuits are grounded to limit excessive voltage from lightning, transient surges, and unintentional contact with higher voltage lines, and to limit the voltage to ground during normal operation. Conductive materials enclosing...

46 CFR 111.05-1 - Purpose.

Code of Federal Regulations, 2010 CFR

2010-10-01

... requirements for the grounding of electric systems, circuits, and equipment. Note: Circuits are grounded to limit excessive voltage from lightning, transient surges, and unintentional contact with higher voltage lines, and to limit the voltage to ground during normal operation. Conductive materials enclosing...

46 CFR 111.05-1 - Purpose.

Code of Federal Regulations, 2012 CFR

2012-10-01

... requirements for the grounding of electric systems, circuits, and equipment. Note: Circuits are grounded to limit excessive voltage from lightning, transient surges, and unintentional contact with higher voltage lines, and to limit the voltage to ground during normal operation. Conductive materials enclosing...

46 CFR 111.05-1 - Purpose.

Code of Federal Regulations, 2014 CFR

2014-10-01

... requirements for the grounding of electric systems, circuits, and equipment. Note: Circuits are grounded to limit excessive voltage from lightning, transient surges, and unintentional contact with higher voltage lines, and to limit the voltage to ground during normal operation. Conductive materials enclosing...

46 CFR 111.05-1 - Purpose.

Code of Federal Regulations, 2013 CFR

2013-10-01

... requirements for the grounding of electric systems, circuits, and equipment. Note: Circuits are grounded to limit excessive voltage from lightning, transient surges, and unintentional contact with higher voltage lines, and to limit the voltage to ground during normal operation. Conductive materials enclosing...

A Single Phase 7-Level Cascade Inverter Topology with Reduced Number of Switches on Resistive Load by Using PWM

NASA Astrophysics Data System (ADS)

Hamzah, H. H.; Ponniran, A.; Kasiran, A. N.; Harimon, M. A.; Gendum, D. A.; Yatim, M. H.

2018-04-01

This paper discussing design principles of inverter structure with reduced number of semiconductor devices of seven levels symmetric H-bridge multilevel inverter (MLI) topology. The aim of this paper is to design an inverter circuit with reduction of semiconductor losses, converter size and development cost. The H-bridge and auxiliary structures were considered in order to achieve seven levels output voltage. The performance of design circuit is compared with conventional seven levels structure in terms of voltage output. The circuit development consists of seven switches and three diode. A basic modulation technique is used to confirm the designed circuit. The results show that the designed circuit is able to convert seven level output voltage with low total harmonics distortion (THD) in voltage fundamental output. According to the results, fundamental output voltage is increased up to 8.314%, and the THD is decreased up to 0.81% compared to the conventional seven level inverter.

High-voltage crowbar circuit with cascade-triggered series ignitrons

DOEpatents

Baker, William R. [Orinda, CA

1980-11-04

A series string of ignitrons for switching a large current at high voltage to ground. Switching is initiated by means of a negative trigger pulse applied to the cathode of the lowest voltage level ignitron next to ground to draw ground current through diodes in the ignitor circuit. The trigger pulse is applied thereby to the next higher ignitron cathode and sequentially to the remainder of the ignitrons in the string through diodes in respective ignitor circuits. Full line voltage is held off of nonconducting diodes and ignitrons by means of varistors.

High-voltage crowbar circuit with cascade-triggered series ignitrons

DOEpatents

Baker, W.R.

A series string of ignitrons for switching a large current at high voltage to ground is discussed. Switching is initiated by means of a negative trigger pulse applied to the cathode of the lowest voltage level ignitron next to ground to draw ground current through diodes in the ignitor circuit. The trigger pulse is applied thereby to the next higher ignitron cathode and sequentially to the remainder of the ignitrons in the string through diodes in respective ignitor circuits. Full line voltage is held off of nonconducting diodes and ignitrons by means of varistors.

High-voltage crowbar circuit with cascade-triggered series ignitrons

DOEpatents

Baker, W.R.

1980-11-04

A series string of ignitrons for switching a large current at high voltage to ground. Switching is initiated by means of a negative trigger pulse applied to the cathode of the lowest voltage level ignitron next to ground to draw ground current through diodes in the ignitor circuit. The trigger pulse is applied thereby to the next higher ignitron cathode and sequentially to the remainder of the ignitrons in the string through diodes in respective ignitor circuits. Full line voltage is held off of nonconducting diodes and ignitrons by means of varistors. 1 fig.

Electrochemically controlled charging circuit for storage batteries

DOEpatents

Onstott, E.I.

1980-06-24

An electrochemically controlled charging circuit for charging storage batteries is disclosed. The embodiments disclosed utilize dc amplification of battery control current to minimize total energy expended for charging storage batteries to a preset voltage level. The circuits allow for selection of Zener diodes having a wide range of reference voltage levels. Also, the preset voltage level to which the storage batteries are charged can be varied over a wide range.

Direct current ballast circuit for metal halide lamp

NASA Technical Reports Server (NTRS)

Lutus, P. (Inventor)

1981-01-01

A direct current ballast circuit for a two electrode metal halide lamp is described. Said direct current ballast circuit includes a low voltage DC input and a high frequency power amplifier and power transformer for developing a high voltage output. The output voltage is rectified by diodes and filtered by inductor and capacitor to provide a regulated DC output through commutating diodes to one terminal of the lamp at the output terminal. A feedback path from the output of the filter capacitor through the bias resistor to power the high frequency circuit which includes the power amplifier and the power transformer for sustaining circuit operations during low voltage transients on the input DC supply is described. A current sensor connected to the output of the lamp through terminal for stabilizing lamp current following breakdown of the lamp is described.

Laser beam apparatus and method for analyzing solar cells

DOEpatents

Staebler, David L.

1980-01-01

A laser beam apparatus and method for analyzing, inter alia, the current versus voltage curve at the point of illumination on a solar cell and the open circuit voltage of a solar cell. The apparatus incorporates a lock-in amplifier, and a laser beam light chopper which permits the measurement of the AC current of the solar cell at an applied DC voltage at the position on the solar cell where the cell is illuminated and a feedback scheme which permits the direct scanning measurements of the open circuit voltage. The accuracy of the measurement is a function of the intensity and wavelength of the laser light with respect to the intensity and wavelength distribution of sunlight and the percentage the dark current is at the open circuit voltage to the short circuit current of the solar cell.

Fabrication of multijunction high voltage concentrator solar cells by integrated circuit technology

NASA Technical Reports Server (NTRS)

Valco, G. J.; Kapoor, V. J.; Evans, J. C., Jr.; Chai, A.-T.

1981-01-01

Standard integrated circuit technology has been developed for the design and fabrication of planar multijunction (PMJ) solar cell chips. Each 1 cm x 1 cm solar chip consisted of six n(+)/p, back contacted, internally series interconnected unit cells. These high open circuit voltage solar cells were fabricated on 2 ohm-cm, p-type 75 microns thick, silicon substrates. A five photomask level process employing contact photolithography was used to pattern for boron diffusions, phorphorus diffusions, and contact metallization. Fabricated devices demonstrated an open circuit voltage of 3.6 volts and a short circuit current of 90 mA at 80 AMl suns. An equivalent circuit model of the planar multi-junction solar cell was developed.

Adaptive piezoelectric sensoriactuators for active structural acoustic control

NASA Astrophysics Data System (ADS)

Vipperman, Jeffrey Stuart

1997-09-01

A new transducer technology with application to active control systems, modal analysis, and autonomous system health monitoring, is brought to fruition in this work. It has the advantages of being lightweight, potentially cost-effective, self-tuning, has negligible dynamics, and most importantly (from a robustness perspective), it provides a colocated sensor/actuator pair. The transducer consists of a piezoceramic element which serves as both an actuator and a sensor and will be referred to in this work as a sensoriactuator. Simple, adaptive signal processing in conjunction with a voltage controlled amplifier, reference capacitor, and a common-mode rejection circuit extract the mechanical response from the total response of the piezoelectric sensoriactuator for sensing. The digital portion of the adaptive piezoelectric sensoriactuator merely serves to tune the circuit, avoiding the potentially destabilizing effects of introducing a digital delay in the signal path, when used for feedback control applications. Adaptive compensation of the sensoriactuator is necessary since the signal to noise ratio is typically greater than 40 dB, making it prohibitive to tune the circuit manually. In addition, the constitutive properties of piezoceramics vary with time and environment, necessitating that the circuit be periodically re-tuned. The analog portion of the hardware is based upon op-amp circuits and an AD632 analog multiplier chip, which serves as both a voltage controlled amplifier (VCA) and a common mode rejection (CMR) circuit. A single coefficient least-mean square (LMS) adaptive filter continuously adjusts the gain of the VCA circuit as necessary. Nonideal behavior of piezoceramics is discussed along with methods to counter the consequential deterioration in circuit performance. A multiple input multiple output (MIMO) implementation of the adaptive piezoelectric sensoriactuator is developed using orthogonal white noise training signals for each sensoriactuator. Two piezostructures were used to demonstrate and verify the adaptive piezoelectric sensoriactuator, a cantilevered beam and a simply-supported plate. The experimental open- loop results compare well with theory. A preliminary closed-loop rate controller applied to the cantilevered beam demonstrates simultaneous control and adaptation of the piezoelectric sensoriactuator. Lastly, [/cal H]2 optimal feedback Active Structural Acoustic Control (ASAC) is demonstrated using the adaptive piezoelectric sensoriactuators and the simply- supported plate test bed. A cost function is formulated based upon control effort and predicted radiated acoustic power. Radiation filters are created to predict acoustic power based on the self and mutual radiation efficiencies of the plate modes to be controlled. Both static output feedback and state-feedback compensation as well as dynamic (Linear Quadratic Gaussian) compensation are investigated and compared analytically. The importance of choosing an appropriate spatial aperture for the piezoceramic transducer for static compensation is discussed. Finally, multivariable Active Vibration Control (AVC) and ASAC are implemented experimentally on a simply-supported plate test bed using an array of four Adaptive Piezoelectric Sensoriactuators as the control sensors and actuators. Unfavorable high-frequency response from the given piezoceramic transducers required that dynamic, Linear Quadratic Gaussian (LQG) compensation be used to achieve good control performance.

Protective Socket For Integrated Circuits

NASA Technical Reports Server (NTRS)

Wilkinson, Chris; Henegar, Greg

1988-01-01

Socket for intergrated circuits (IC's) protects from excessive voltages and currents or from application of voltages and currents in wrong sequence during insertion or removal. Contains built-in switch that opens as IC removed, disconnecting leads from signals and power. Also protects other components on circuit board from transients produced by insertion and removal of IC. Makes unnecessary to turn off power to entire circuit board so other circuits on board continue to function.

INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Efficient One-Step Generation of Cluster State with Charge Qubits in Circuit QED

NASA Astrophysics Data System (ADS)

Wang, Yi-Min; Li, Cheng-Zu

2010-01-01

We propose theoretical schemes to generate highly entangled cluster state with superconducting qubits in a circuit QED architecture. Charge qubits are located inside a superconducting transmission line, which serves as a quantum data bus. We show that large clusters state can be efficiently generated in just one step with the long-range Ising-like unitary operators. The quantum operations which are generally realized by two coupling mechanisms: either voltage coupling or current coupling, depend only on global geometric features and are insensitive not only to the thermal state of the transmission line but also to certain random operation errors. Thus high-fidelity one-way quantum computation can be achieved.

30 CFR 18.54 - High-voltage continuous mining machines.

Code of Federal Regulations, 2010 CFR

2010-07-01

... and Design Requirements § 18.54 High-voltage continuous mining machines. (a) Separation of high... removed. (c) Circuit-interrupting devices. Circuit-interrupting devices must be designed and installed to... ground. (e) Onboard ungrounded, three-phase power circuit. A continuous mining machine designed with an...

30 CFR 18.54 - High-voltage continuous mining machines.

Code of Federal Regulations, 2013 CFR

2013-07-01

... and Design Requirements § 18.54 High-voltage continuous mining machines. (a) Separation of high... removed. (c) Circuit-interrupting devices. Circuit-interrupting devices must be designed and installed to... ground. (e) Onboard ungrounded, three-phase power circuit. A continuous mining machine designed with an...

30 CFR 18.54 - High-voltage continuous mining machines.

Code of Federal Regulations, 2014 CFR

2014-07-01

... and Design Requirements § 18.54 High-voltage continuous mining machines. (a) Separation of high... removed. (c) Circuit-interrupting devices. Circuit-interrupting devices must be designed and installed to... ground. (e) Onboard ungrounded, three-phase power circuit. A continuous mining machine designed with an...

30 CFR 18.54 - High-voltage continuous mining machines.

Code of Federal Regulations, 2012 CFR

2012-07-01

... and Design Requirements § 18.54 High-voltage continuous mining machines. (a) Separation of high... removed. (c) Circuit-interrupting devices. Circuit-interrupting devices must be designed and installed to... ground. (e) Onboard ungrounded, three-phase power circuit. A continuous mining machine designed with an...

30 CFR 18.54 - High-voltage continuous mining machines.

Code of Federal Regulations, 2011 CFR

2011-07-01

... and Design Requirements § 18.54 High-voltage continuous mining machines. (a) Separation of high... removed. (c) Circuit-interrupting devices. Circuit-interrupting devices must be designed and installed to... ground. (e) Onboard ungrounded, three-phase power circuit. A continuous mining machine designed with an...

A nickel-cadmium battery reconditioning circuit

NASA Technical Reports Server (NTRS)

Lanier, R.

1977-01-01

The circuit presented is simple and small enough to be included in a typical battery charge/power control assembly, yet provides the advantage of a complete ground-type battery reconditioning discharge. Test results on the circuit when used to recondition two 24 cell, 20 A-h nickel-cadmium batteries are given. These results show that a battery reconditioned with this circuit returns to greater than 90 percent of its original capacity (greater than nameplate capacity) and follows a typical new battery degradation curve even after over 20,000 simulated orbital cycles for a 4 year period. Applications of the circuit are considered along with recommendations relative to its use. Its application in low voltage (22 to 36 Vdc) power systems and in high voltage (100 to 150 Vdc) power systems is discussed. The implications are that the high voltage systems have a greater need for battery reconditioning than their low voltage counterparts, and that using these circuit techniques, the expected life of a battery in low Earth orbit can be up to 5 years.

Temperature gradient measurements by using thermoelectric effect in CNTs-silicone adhesive composite.

PubMed

Chani, Muhammad Tariq Saeed; Karimov, Kh S; Asiri, Abdullah M; Ahmed, Nisar; Bashir, Muhammad Mehran; Khan, Sher Bahadar; Rub, Malik Abdul; Azum, Naved

2014-01-01

This work presents the fabrication and investigation of thermoelectric cells based on composite of carbon nanotubes (CNT) and silicone adhesive. The composite contains CNT and silicon adhesive 1∶1 by weight. The current-voltage characteristics and dependences of voltage, current and Seebeck coefficient on the temperature gradient of cell were studied. It was observed that with increase in temperature gradient the open circuit voltage, short circuit current and the Seebeck coefficient of the cells increase. Approximately 7 times increase in temperature gradient increases the open circuit voltage and short circuit current up to 40 and 5 times, respectively. The simulation of experimental results is also carried out; the simulated results are well matched with experimental results.

Temperature Gradient Measurements by Using Thermoelectric Effect in CNTs-Silicone Adhesive Composite

PubMed Central

Chani, Muhammad Tariq Saeed; Karimov, Kh. S.; Asiri, Abdullah M.; Ahmed, Nisar; Bashir, Muhammad Mehran; Khan, Sher Bahadar; Rub, Malik Abdul; Azum, Naved

2014-01-01

This work presents the fabrication and investigation of thermoelectric cells based on composite of carbon nanotubes (CNT) and silicone adhesive. The composite contains CNT and silicon adhesive 1∶1 by weight. The current-voltage characteristics and dependences of voltage, current and Seebeck coefficient on the temperature gradient of cell were studied. It was observed that with increase in temperature gradient the open circuit voltage, short circuit current and the Seebeck coefficient of the cells increase. Approximately 7 times increase in temperature gradient increases the open circuit voltage and short circuit current up to 40 and 5 times, respectively. The simulation of experimental results is also carried out; the simulated results are well matched with experimental results. PMID:24748375

Compact high voltage solid state switch

DOEpatents

Glidden, Steven C.

2003-09-23

A compact, solid state, high voltage switch capable of high conduction current with a high rate of current risetime (high di/dt) that can be used to replace thyratrons in existing and new applications. The switch has multiple thyristors packaged in a single enclosure. Each thyristor has its own gate drive circuit that circuit obtains its energy from the energy that is being switched in the main circuit. The gate drives are triggered with a low voltage, low current pulse isolated by a small inexpensive transformer. The gate circuits can also be triggered with an optical signal, eliminating the trigger transformer altogether. This approach makes it easier to connect many thyristors in series to obtain the hold off voltages of greater than 80 kV.

Charging system and method for multicell storage batteries

DOEpatents

Cox, Jay A.

1978-01-01

A battery-charging system includes a first charging circuit connected in series with a plurality of battery cells for controlled current charging. A second charging circuit applies a controlled voltage across each individual cell for equalization of the cells to the fully charged condition. This controlled voltage is determined at a level above the fully charged open-circuit voltage but at a sufficiently low level to prevent corrosion of cell components by electrochemical reaction. In this second circuit for cell equalization, a transformer primary receives closely regulated, square-wave voltage which is coupled to a plurality of equal secondary coil windings. Each secondary winding is connected in parallel to each cell of a series-connected pair of cells through half-wave rectifiers and a shared, intermediate conductor.

Direct Current Amplifier. Report No. 92; AMPLIFICADOR DE CORRIENTE CONTINUA. Informe No. 92

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marazzi, C.

1963-01-01

A direct-current amplifier with low zero current and solid-state chopper for input is described. This amplifier can be used in control circuits and for general applications such as temperature measurement in thermocouples, amplifier for a photo-sensitive element, or zero amplifier in control systems. The input impedance is relatively low, serving principally as current amplifier. It is possible to obtain a symmetry characteristic for positive and negative values of the output voltage with respect to the input. (tr-auth)

Factors affecting the open-circuit voltage and electrode kinetics of some iron/titanium redox flow cells

NASA Technical Reports Server (NTRS)

Reid, M. A.; Gahn, R. F.

1977-01-01

Performance of the iron-titanium redox flow cell was studied as a function of acid concentration. Anion permeable membranes separated the compartments. Electrodes were graphite cloth. Current densities ranged up to 25 mA/square centimeter. Open-circuit and load voltages decreased as the acidity was increased on the iron side as predicted. On the titanium side, open-circuit voltages decreased as the acidity was increased in agreement with theory, but load voltages increased due to decreased polarization with increasing acidity. High acidity on the titanium side coupled with low acidity on the iron side gives the best load voltage, but such cells show voltage losses as they are repeatedly cycled. Analyses show that the bulk of the voltage losses are due to diffusion of acid through the membrane.

A Generalized Precharging Strategy for Soft Startup Process of the Modular Multilevel Converter-Based HVDC Systems

DOE PAGES

Zhang, Lei; Qin, Jiangchao; Wu, Xiajie; ...

2017-01-01

The modular multilevel converter (MMC) has become one of the most promising converter technologies for medium/high-power applications, specifically for highvoltage direct current (HVDC) transmission systems. One of the technical challenges associated with the operation and control of the MMC-based system is to precharge the submodule (SM) capacitors to their nominal voltage during the startup process. In this paper, considering various SM circuits, a generalized precharging strategy is proposed for the MMC-based systems, which can implement soft stratup from dc or ac side. Furthermore, the proposed precharging strategy can be applicabe for various SM circuits and MMC configurations. The proposed startupmore » strategy does not require extra measurements and/or auxiliary power supplies. The charging current is controlled by adjusting the changing rate of the number of blocked and bypassed SM capacitors. Based on the proposed startup strategy, the startup processes of MMC/MMC-HVDC systems based on various SM circuits are analyzed and a generalized startup procedure for various MMC-HVDC systems is proposed. In addition, the uncontrollable steady-state SM capacitor voltages of various MMC-based systems are analyzed and determined, potentially useful in SM design. Our performance of the proposed strategy for various MMC-HVDC systems is evaluated based on time-domain simulation studies in the PSCAD/EMTDC software environment and experimental results based on a scaled-down prototype.« less

A Generalized Precharging Strategy for Soft Startup Process of the Modular Multilevel Converter-Based HVDC Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Lei; Qin, Jiangchao; Wu, Xiajie

The modular multilevel converter (MMC) has become one of the most promising converter technologies for medium/high-power applications, specifically for highvoltage direct current (HVDC) transmission systems. One of the technical challenges associated with the operation and control of the MMC-based system is to precharge the submodule (SM) capacitors to their nominal voltage during the startup process. In this paper, considering various SM circuits, a generalized precharging strategy is proposed for the MMC-based systems, which can implement soft stratup from dc or ac side. Furthermore, the proposed precharging strategy can be applicabe for various SM circuits and MMC configurations. The proposed startupmore » strategy does not require extra measurements and/or auxiliary power supplies. The charging current is controlled by adjusting the changing rate of the number of blocked and bypassed SM capacitors. Based on the proposed startup strategy, the startup processes of MMC/MMC-HVDC systems based on various SM circuits are analyzed and a generalized startup procedure for various MMC-HVDC systems is proposed. In addition, the uncontrollable steady-state SM capacitor voltages of various MMC-based systems are analyzed and determined, potentially useful in SM design. Our performance of the proposed strategy for various MMC-HVDC systems is evaluated based on time-domain simulation studies in the PSCAD/EMTDC software environment and experimental results based on a scaled-down prototype.« less

I/O impedance controller

DOEpatents

Ruesch, Rodney; Jenkins, Philip N.; Ma, Nan

2004-03-09

There is disclosed apparatus and apparatus for impedance control to provide for controlling the impedance of a communication circuit using an all-digital impedance control circuit wherein one or more control bits are used to tune the output impedance. In one example embodiment, the impedance control circuit is fabricated using circuit components found in a standard macro library of a computer aided design system. According to another example embodiment, there is provided a control for an output driver on an integrated circuit ("IC") device to provide for forming a resistor divider network with the output driver and a resistor off the IC device so that the divider network produces an output voltage, comparing the output voltage of the divider network with a reference voltage, and adjusting the output impedance of the output driver to attempt to match the output voltage of the divider network and the reference voltage. Also disclosed is over-sampling the divider network voltage, storing the results of the over sampling, repeating the over-sampling and storing, averaging the results of multiple over sampling operations, controlling the impedance with a plurality of bits forming a word, and updating the value of the word by only one least significant bit at a time.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Milkov, Mihail M.

A comparator circuit suitable for use in a column-parallel single-slope analog-to-digital converter comprises a comparator, an input voltage sampling switch, a sampling capacitor arranged to store a voltage which varies with an input voltage when the sampling switch is closed, and a local ramp buffer arranged to buffer a global voltage ramp applied at an input. The comparator circuit is arranged such that its output toggles when the buffered global voltage ramp exceeds the stored voltage. Both DC- and AC-coupled comparator embodiments are disclosed.

Analysis and calculation of lightning-induced voltages in aircraft electrical circuits

NASA Technical Reports Server (NTRS)

Plumer, J. A.

1974-01-01

Techniques to calculate the transfer functions relating lightning-induced voltages in aircraft electrical circuits to aircraft physical characteristics and lightning current parameters are discussed. The analytical work was carried out concurrently with an experimental program of measurements of lightning-induced voltages in the electrical circuits of an F89-J aircraft. A computer program, ETCAL, developed earlier to calculate resistive and inductive transfer functions is refined to account for skin effect, providing results more valid over a wider range of lightning waveshapes than formerly possible. A computer program, WING, is derived to calculate the resistive and inductive transfer functions between a basic aircraft wing and a circuit conductor inside it. Good agreement is obtained between transfer inductances calculated by WING and those reduced from measured data by ETCAL. This computer program shows promise of expansion to permit eventual calculation of potential lightning-induced voltages in electrical circuits of complete aircraft in the design stage.

Improvement in Brightness Uniformity by Compensating for the Threshold Voltages of Both the Driving Thin-Film Transistor and the Organic Light-Emitting Diode for Active-Matrix Organic Light-Emitting Diode Displays

NASA Astrophysics Data System (ADS)

Ching-Lin Fan,; Hui-Lung Lai,; Jyu-Yu Chang,

2010-05-01

In this paper, we propose a novel pixel design and driving method for active-matrix organic light-emitting diode (AM-OLED) displays using low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs). The proposed threshold voltage compensation circuit, which comprised five transistors and two capacitors, has been verified to supply uniform output current by simulation work using the automatic integrated circuit modeling simulation program with integrated circuit emphasis (AIM-SPICE) simulator. The driving scheme of this voltage programming method includes four periods: precharging, compensation, data input, and emission. The simulated results demonstrate excellent properties such as low error rate of OLED anode voltage variation (<1%) and high output current. The proposed pixel circuit shows high immunity to the threshold voltage deviation characteristics of both the driving poly-Si TFT and the OLED.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Volkov, M. S.; Gusev, Yu. P., E-mail: GusevYP@mpei.ru; Monakov, Yu. V.

The insertion of current-limiting reactors into electrical equipment operating at a voltage of 110 and 220 kV produces a change in the parameters of the transient recovery voltages at the contacts of the circuit breakers for disconnecting short circuits, which could be the reason for the increase in the duration of the short circuit, damage to the electrical equipment and losses in the power system. The results of mathematical modeling of the transients, caused by tripping of the short circuit in a reactive electric power transmission line are presented, and data are given on the negative effect of a current-limitingmore » resistor on the rate of increase and peak value of the transient recovery voltages. Methods of ensuring the standard requirements imposed on the parameters of the transient recovery voltages when using current-limiting reactors in the high-voltage electrical equipment of power plants and substations are proposed and analyzed.« less

Commutation circuit for an HVDC circuit breaker

DOEpatents

Premerlani, William J.

1981-01-01

A commutation circuit for a high voltage DC circuit breaker incorporates a resistor capacitor combination and a charging circuit connected to the main breaker, such that a commutating capacitor is discharged in opposition to the load current to force the current in an arc after breaker opening to zero to facilitate arc interruption. In a particular embodiment, a normally open commutating circuit is connected across the contacts of a main DC circuit breaker to absorb the inductive system energy trapped by breaker opening and to limit recovery voltages to a level tolerable by the commutating circuit components.

Commutation circuit for an HVDC circuit breaker

DOEpatents

Premerlani, W.J.

1981-11-10

A commutation circuit for a high voltage DC circuit breaker incorporates a resistor capacitor combination and a charging circuit connected to the main breaker, such that a commutating capacitor is discharged in opposition to the load current to force the current in an arc after breaker opening to zero to facilitate arc interruption. In a particular embodiment, a normally open commutating circuit is connected across the contacts of a main DC circuit breaker to absorb the inductive system energy trapped by breaker opening and to limit recovery voltages to a level tolerable by the commutating circuit components. 13 figs.

Commutating Permanent-Magnet Motors At Low Speed

NASA Technical Reports Server (NTRS)

Dolland, C.

1985-01-01

Circuit provides forced commutation during starting. Forced commutation circuit diverts current from inverter SCR's and turns SCR's off during commutation intervals. Silicon controlled rectifier in circuit unnecessary when switch S10 replaced by high-current, high-voltage transistor. At present, high-current, low-voltage device must suffice.

Microcircuit Modeling and Simulation beyond Ohm's Law

ERIC Educational Resources Information Center

Saxena, T.; Chek, D. C. Y.; Tan, M. L. P.; Arora, V. K.

2011-01-01

Circuit theory textbooks rely heavily on the applicability of Ohm's law, which collapses as electronic components reach micro- and nanoscale dimensions. Circuit analysis is examined in the regime where the applied voltage V is greater than the critical voltage V[subscript c], which triggers the nonlinear behavior. The critical voltage is infinity…

Silicon Controlled Switch for Detection of Ionizing Radiation

DTIC Science & Technology

2015-12-01

sensitivity of previous NPS silicon controlled rectifier (SCR) based circuits. Additionally, the circuit in this thesis was able to detect AM-241 and...sensitivity of previous NPS silicon controlled rectifier (SCR) based circuits. Additionally, the circuit in this thesis was able to detect AM-241 and...Controlled Rectifier SCS Silicon-Controlled Switch SONAR SOund Navigation and Ranging VBIAS Applied Bias Voltage VH Holding Voltage VS Standalone SCS

Realization of rapid debugging for detection circuit of optical fiber gas sensor: Using an analog signal source

NASA Astrophysics Data System (ADS)

Tian, Changbin; Chang, Jun; Wang, Qiang; Wei, Wei; Zhu, Cunguang

2015-03-01

An optical fiber gas sensor mainly consists of two parts: optical part and detection circuit. In the debugging for the detection circuit, the optical part usually serves as a signal source. However, in the debugging condition, the optical part can be easily influenced by many factors, such as the fluctuation of ambient temperature or driving current resulting in instability of the wavelength and intensity for the laser; for dual-beam sensor, the different bends and stresses of the optical fiber will lead to the fluctuation of the intensity and phase; the intensity noise from the collimator, coupler, and other optical devices in the system will also result in the impurity of the optical part based signal source. In order to dramatically improve the debugging efficiency of the detection circuit and shorten the period of research and development, this paper describes an analog signal source, consisting of a single chip microcomputer (SCM), an amplifier circuit, and a voltage-to-current conversion circuit. It can be used to realize the rapid debugging detection circuit of the optical fiber gas sensor instead of optical part based signal source. This analog signal source performs well with many other advantages, such as the simple operation, small size, and light weight.

A temperature monitor circuit with small voltage sensitivity using a topology-reconfigurable ring oscillator

NASA Astrophysics Data System (ADS)

Kishimoto, Tadashi; Ishihara, Tohru; Onodera, Hidetoshi

2018-04-01

In this paper, we propose a temperature monitor circuit that exhibits a small supply voltage sensitivity adopting a circuit topology of a reconfigurable ring oscillator. The circuit topology of the monitor is crafted such that the oscillation frequency is determined by the amount of subthreshold leakage current, which has an exponential dependence on temperature. Another important characteristic of the monitor is its small supply voltage sensitivity. The measured oscillation frequency of a test chip fabricated in a 65 nm CMOS process varies only 2.6% under a wide range of supply voltages from 0.4 to 1.0 V at room temperature. The temperature estimation error ranges from -0.3 to 0.4 °C over a temperature range of 10 to 100 °C.

High voltage pulse generator

DOEpatents

Fasching, George E.

1977-03-08

An improved high-voltage pulse generator has been provided which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of a first one of the rectifiers connected between the first and second of the plurality of charging capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. Alternate circuits are provided for controlling the application of the charging voltage from a charging circuit to be applied to the parallel capacitors which provides a selection of at least two different intervals in which the charging voltage is turned "off" to allow the SCR's connecting the capacitors in series to turn "off" before recharging begins. The high-voltage pulse-generating circuit including the N capacitors and corresponding SCR's which connect the capacitors in series when triggered "on" further includes diodes and series-connected inductors between the parallel-connected charging capacitors which allow sufficiently fast charging of the capacitors for a high pulse repetition rate and yet allow considerable control of the decay time of the high-voltage pulses from the pulse-generating circuit.

Analog circuit for controlling acoustic transducer arrays

DOEpatents

Drumheller, Douglas S.

1991-01-01

A simplified ananlog circuit is presented for controlling electromechanical transducer pairs in an acoustic telemetry system. The analog circuit of this invention comprises a single electrical resistor which replaces all of the digital components in a known digital circuit. In accordance with this invention, a first transducer in a transducer pair of array is driven in series with the resistor. The voltage drop across this resistor is then amplified and used to drive the second transducer. The voltage drop across the resistor is proportional and in phase with the current to the transducer. This current is approximately 90 degrees out of phase with the driving voltage to the transducer. This phase shift replaces the digital delay required by the digital control circuit of the prior art.

Minimized open-circuit voltage reduction in GaAs/InGaAs quantum well solar cells with bandgap-engineered graded quantum well depths

NASA Astrophysics Data System (ADS)

Li, Xiaohan; Dasika, Vaishno D.; Li, Ping-Chun; Ji, Li; Bank, Seth R.; Yu, Edward T.

2014-09-01

The use of InGaAs quantum wells with composition graded across the intrinsic region to increase open-circuit voltage in p-i-n GaAs/InGaAs quantum well solar cells is demonstrated and analyzed. By engineering the band-edge energy profile to reduce photo-generated carrier concentration in the quantum wells at high forward bias, simultaneous increases in both open-circuit voltage and short-circuit current density are achieved, compared to those for a structure with the same average In concentration, but constant rather than graded quantum well composition across the intrinsic region. This approach is combined with light trapping to further increase short-circuit current density.

Up-and-down chopper circuit

DOEpatents

Goffeau, Jacques R.

1979-01-01

An improved Up-and-Down Chopper Circuit is provided which is useful for voltage regulation in a bi-directional DC power system. In the down mode, power is switched from a DC power source to a lower voltage energy storing load while in the up mode stored energy in the load is transferred to the higher voltage source. The system uses Darlington transistor switches in a conventional connection. The improvement relates to circuit additions to eliminate the effects of inter-electrode capacitance inherent with this Darlington transistor switching arrangement.

MOSFET Power Controller

NASA Technical Reports Server (NTRS)

Mitchell, J.; Jones, K.

1986-01-01

High current and voltage controlled remotely. Remote Power Conroller includes two series-connected banks of parallel-connected MOSFET's to withstand high current and voltage. Voltage sharing between switch banks, low-impedance, gate-drive circuits used. Provided controlled range for turn on. Individually trimmable to insure simultaneous switching within few nanoseconds during both turn on and turn off. Control circuit for each switch bank and over-current trip circuit float independently and supplied power via transformer T1 from inverter. Control of floating stages by optocouplers.

MULTIPLIER CIRCUIT

DOEpatents

Chase, R.L.

1963-05-01

An electronic fast multiplier circuit utilizing a transistor controlled voltage divider network is presented. The multiplier includes a stepped potentiometer in which solid state or transistor switches are substituted for mechanical wipers in order to obtain electronic switching that is extremely fast as compared to the usual servo-driven mechanical wipers. While this multiplier circuit operates as an approximation and in steps to obtain a voltage that is the product of two input voltages, any desired degree of accuracy can be obtained with the proper number of increments and adjustment of parameters. (AEC)

High stability amplifier

NASA Technical Reports Server (NTRS)

Adams, W. A.; Reinhardt, V. S. (Inventor)

1983-01-01

An electrical RF signal amplifier for providing high temperature stability and RF isolation and comprised of an integrated circuit voltage regulator, a single transistor, and an integrated circuit operational amplifier mounted on a circuit board such that passive circuit elements are located on side of the circuit board while the active circuit elements are located on the other side is described. The active circuit elements are embedded in a common heat sink so that a common temperature reference is provided for changes in ambient temperature. The single transistor and operational amplifier are connected together to form a feedback amplifier powered from the voltage regulator with transistor implementing primarily the desired signal gain while the operational amplifier implements signal isolation. Further RF isolation is provided by the voltage regulator which inhibits cross-talk from other like amplifiers powered from a common power supply. Input and output terminals consisting of coaxial connectors are located on the sides of a housing in which all the circuit components and heat sink are located.

Switch contact device for interrupting high current, high voltage, AC and DC circuits

DOEpatents

Via, Lester C.; Witherspoon, F. Douglas; Ryan, John M.

2005-01-04

A high voltage switch contact structure capable of interrupting high voltage, high current AC and DC circuits. The contact structure confines the arc created when contacts open to the thin area between two insulating surfaces in intimate contact. This forces the arc into the shape of a thin sheet which loses heat energy far more rapidly than an arc column having a circular cross-section. These high heat losses require a dramatic increase in the voltage required to maintain the arc, thus extinguishing it when the required voltage exceeds the available voltage. The arc extinguishing process with this invention is not dependent on the occurrence of a current zero crossing and, consequently, is capable of rapidly interrupting both AC and DC circuits. The contact structure achieves its high performance without the use of sulfur hexafluoride.

Improved Short-Circuit Protection for Power Cells in Series

NASA Technical Reports Server (NTRS)

Davies, Francis

2008-01-01

A scheme for protection against short circuits has been devised for series strings of lithium electrochemical cells that contain built-in short-circuit protection devices, which go into a high-resistance, current-limiting state when heated by excessive current. If cells are simply connected in a long series string to obtain a high voltage and a short circuit occurs, whichever short-circuit protection device trips first is exposed to nearly the full string voltage, which, typically, is large enough to damage the device. Depending on the specific cell design, the damage can defeat the protective function, cause a dangerous internal short circuit in the affected cell, and/or cascade to other cells. In the present scheme, reverse diodes rated at a suitably high current are connected across short series sub-strings, the lengths of which are chosen so that when a short-circuit protection device is tripped, the voltage across it does not exceed its rated voltage. This scheme preserves the resetting properties of the protective devices. It provides for bypassing of cells that fail open and limits cell reversal, though not as well as does the more-expensive scheme of connecting a diode across every cell.

Open circuit voltage-decay behavior in amorphous p-i-n solar due to injection

NASA Astrophysics Data System (ADS)

Smrity, Manu; Dhariwal, S. R.

2018-05-01

The paper deals with the basic recombination processes at the dangling bond and the band tail states at various levels of injection, expressed in terms of short-circuit current density and their role in the behavior of amorphous solar cells. As the level of injection increases the fill factor decreases whereas the open circuit voltage increases very slowly, showing a saturation tendency. Calculations have been done for two values of tail state densities and shows that with an increase in tail state densities both, the fill factor and open circuit voltage decreases, results an overall degradation of the solar cell.

Impulse commutating circuit with transformer to limit reapplied voltage

NASA Technical Reports Server (NTRS)

Mcconville, J. H.

1973-01-01

Silicon controlled rectifier opens circuit with currents flowing up to values of 30 amperes. Switching concept halves both current and voltage in middle of commutating cycle thereby lowering size and weight requirements. Commutating circuit can be turned on or off by command and will remain on in absence of load due to continuous gate.

30 CFR 75.800-2 - Approved circuit schemes.

Code of Federal Regulations, 2010 CFR

2010-07-01

... necessary protection to the circuits required by § 75.800: (a) Ground check relays may be used for undervoltage protection if the relay coils are designed to trip the circuit breaker when line voltage decreases to 40 percent to 60 percent of the nominal line voltage; (b) Ground trip relays on resistance...

30 CFR 75.800-2 - Approved circuit schemes.

Code of Federal Regulations, 2011 CFR

2011-07-01

... necessary protection to the circuits required by § 75.800: (a) Ground check relays may be used for undervoltage protection if the relay coils are designed to trip the circuit breaker when line voltage decreases to 40 percent to 60 percent of the nominal line voltage; (b) Ground trip relays on resistance...

A Design Methodology for Optoelectronic VLSI

DTIC Science & Technology

2007-01-01

current gets converted to a CMOS voltage level through a transimpedance amplifier circuit called a receiver. The output of the receiver is then...change the current flowing from the diode to a voltage that the logic inputs can use. That circuit is called a receiver. It is a transimpedance amplifier ...incorpo- rate random access memory circuits, SRAM or dynamic RAM (DRAM). These circuits use weak internal analog signals that are amplified by sense

A Low Input Current and Wide Conversion Ratio Buck Regulator with 75% Efficiency for High-Voltage Triboelectric Nanogenerators

NASA Astrophysics Data System (ADS)

Luo, Li-Chuan; Bao, De-Chun; Yu, Wu-Qi; Zhang, Zhao-Hua; Ren, Tian-Ling

2016-01-01

It is meaningful to research the Triboelectric Nanogenerators (TENG), which can create electricity anywhere and anytime. There are many researches on the structures and materials of TENG to explain the phenomenon that the maximum voltage is stable and the current is increasing. The output voltage of the TENG is high about 180-400 V, and the output current is small about 39 μA, which the electronic devices directly integration of TENG with Li-ion batteries will result in huge energy loss due to the ultrahigh TENG impedance. A novel interface circuit with the high-voltage buck regulator for TENG is introduced firstly in this paper. The interface circuit can transfer the output signal of the TENG into the signal fit to a lithium ion battery. Through the circuit of the buck regulator, the average output voltage is about 4.0 V and the average output current is about 1.12 mA. Further, the reliability and availability for the lithium ion battery and the circuit are discussed. The interface circuit is simulated using the Cadence software and verified through PCB experiment. The buck regulator can achieve 75% efficiency for the High-Voltage TENG. This will lead to a research hot and industrialization applications.

30 CFR 77.803-1 - Fail safe ground check circuits; maximum voltage.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Fail safe ground check circuits; maximum voltage. 77.803-1 Section 77.803-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.803-1 Fail safe ground check...

30 CFR 77.803-1 - Fail safe ground check circuits; maximum voltage.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Fail safe ground check circuits; maximum voltage. 77.803-1 Section 77.803-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.803-1 Fail safe ground check...

30 CFR 77.803-1 - Fail safe ground check circuits; maximum voltage.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Fail safe ground check circuits; maximum voltage. 77.803-1 Section 77.803-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.803-1 Fail safe ground check...

Progress Check Module; Basic Electricity and Electronics Individualized Learning System. Progress Check Booklet.

ERIC Educational Resources Information Center

Bureau of Naval Personnel, Washington, DC.

The Progress Check Booklet is designed to be used by the student working in the programed course to determine if he has mastered the concepts in the course booklets on: electrical current; voltage; resistance; measuring current and voltage in series circuits; relationships of current, voltage, and resistance; parellel circuits; combination…

Battery voltage-balancing applications of disk-type radial mode Pb(Zr • Ti)O3 ceramic resonator

NASA Astrophysics Data System (ADS)

Thenathayalan, Daniel; Lee, Chun-gu; Park, Joung-hu

2017-10-01

In this paper, we propose a novel technique to build a charge-balancing circuit for series-connected battery strings using various kinds of disk-type ceramic Pb(Zr • Ti)O3 piezoelectric resonators (PRs). The use of PRs replaces the whole external battery voltage-balancer circuit, which consists mainly of a bulky magnetic element. The proposed technique is validated using different ceramic PRs and the results are analyzed in terms of their physical properties. A series-connected battery string with a voltage rating of 61.5 V is set as a hardware prototype under test, then the power transfer efficiency of the system is measured at different imbalance voltages. The performance of the proposed battery voltage-balancer circuit employed with a PR is also validated through hardware implementation. Furthermore, the temperature distribution image of the PR is obtained to compare power transfer efficiency and thermal stress under different operating conditions. The test results show that the battery voltage-balancer circuit can be successfully implemented using PRs with the maximum power conversion efficiency of over 96% for energy storage systems.

A novel ZVS high voltage power supply for micro-channel plate photomultiplier tubes

NASA Astrophysics Data System (ADS)

Pei, Chengquan; Tian, Jinshou; Liu, Zhen; Qin, Hong; Wu, Shengli

2017-04-01

A novel resonant high voltage power supply (HVPS) with zero voltage switching (ZVS), to reduce the voltage stress on switching devices and improve conversion efficiency, is proposed. The proposed HVPS includes a drive circuit, a transformer, several voltage multiplying circuits, and a regulator circuit. The HVPS contains several secondary windings that can be precisely regulated. The proposed HVPS performed better than the traditional resistor voltage divider, which requires replacing matching resistors resulting in resistor dispersibility in the Micro-Channel Plate (MCP). The equivalent circuit of the proposed HVPS was established and the operational principle analyzed. The entire switching element can achieve ZVS, which was validated by a simulation and experiments. The properties of this HVPS were tested including minimum power loss (240 mW), maximum power loss (1 W) and conversion efficiency (85%). The results of this research are that the proposed HVPS was suitable for driving the micro-channel plate photomultiplier tube (MCP-PMT). It was therefore adopted to test the MCP-PMT, which will be used in Daya Bay reactor neutrino experiment II in China.

Powerplexer

NASA Technical Reports Server (NTRS)

Woods, J. M. (Inventor)

1973-01-01

An electrical power distribution system is described for use in providing different dc voltage levels. A circuit is supplied with DC voltage levels and commutates pulses for timed intervals onto a pair of distribution wires. The circuit is driven by a command generator which places pulses on the wires in a timed sequence. The pair of wires extend to voltage strippers connected to the various loads. The voltage strippers each respond to the pulse dc levels on the pair of wires and form different output voltages communicated to each load.

Complementary Paired G4FETs as Voltage-Controlled NDR Device

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad; Chen, Suheng; Blalock, Ben; Britton, Chuck; Prothro, Ben; Vandersand, James; Schrimph, Ron; Cristoloveanu, Sorin; Akavardar, Kerem; Gentil, P.

2009-01-01

It is possible to synthesize a voltage-controlled negative-differential-resistance (NDR) device or circuit by use of a pair of complementary G4FETs (four-gate field-effect transistors). [For more information about G4FETs, please see the immediately preceding article]. As shown in Figure 1, the present voltage-controlled NDR device or circuit is an updated version of a prior NDR device or circuit, known as a lambda diode, that contains a pair of complementary junction field-effect transistors (JFETs). (The lambda diode is so named because its current-versus- voltage plot bears some resemblance to an upper-case lambda.) The present version can be derived from the prior version by substituting G4FETs for the JFETs and connecting both JFET gates of each G4FET together. The front gate terminals of the G4FETs constitute additional terminals (that is, terminals not available in the older JFET version) to which one can apply control voltages VN and VP. Circuits in which NDR devices have been used include (1) Schmitt triggers and (2) oscillators containing inductance/ capacitance (LC) resonant circuits. Figure 2 depicts such circuits containing G4FET NDR devices like that of Figure 1. In the Schmitt trigger shown here, the G4FET NDR is loaded with an ordinary inversion-mode, p-channel, metal oxide/semiconductor field-effect transistor (inversion-mode PMOSFET), the VN terminal of the G4FET NDR device is used as an input terminal, and the input terminals of the PMOSFET and the G4FET NDR device are connected. VP can be used as an extra control voltage (that is, a control voltage not available in a typical prior Schmitt trigger) for adjusting the pinch-off voltage of the p-channel G4FET and thereby adjusting the trigger-voltage window. In the oscillator, a G4FET NDR device is loaded with a conventional LC tank circuit. As in other LC NDR oscillators, oscillation occurs because the NDR counteracts the resistance in the tank circuit. The advantage of this G4FET-NDR LC oscillator over a conventional LC NDR oscillator is that one can apply a time-varying signal to one of the extra control input terminals (VN or VP) to modulate the conductance of the NDR device and thereby amplitude-modulate the output signal.

Annealing effects on hydrogenated diamond NOR logic circuits

NASA Astrophysics Data System (ADS)

Liu, J. W.; Oosato, H.; Liao, M. Y.; Imura, M.; Watanabe, E.; Koide, Y.

2018-04-01

Here, hydrogenated diamond (H-diamond) NOR logic circuits composed of two p-type enhancement-mode (E-mode) metal-oxide-semiconductor field-effect-transistors (MOSFETs) and a load resistor are fabricated and characterized. The fabrication process and the annealing effect on the electrical properties of the NOR logic circuit are demonstrated. There are distinct logical characteristics for the as-received and 300 °C annealed NOR logic circuits. When one or both input voltages for the E-mode MOSFETs are -10.0 V and "high" signals, output voltages respond 0 V and "low" signals. Instead, when both input voltages are 0 V and "low" signals, output voltage responds -10.0 V and a "high" signal. After annealing at 400 °C, the NOR logical characteristics are damaged, which is possibly attributed to the degradation of the H-diamond MOSFETs.

Microwave integrated circuit for Josephson voltage standards

NASA Technical Reports Server (NTRS)

Holdeman, L. B.; Toots, J.; Chang, C. C. (Inventor)

1980-01-01

A microwave integrated circuit comprised of one or more Josephson junctions and short sections of microstrip or stripline transmission line is fabricated from thin layers of superconducting metal on a dielectric substrate. The short sections of transmission are combined to form the elements of the circuit and particularly, two microwave resonators. The Josephson junctions are located between the resonators and the impedance of the Josephson junctions forms part of the circuitry that couples the two resonators. The microwave integrated circuit has an application in Josephson voltage standards. In this application, the device is asymmetrically driven at a selected frequency (approximately equal to the resonance frequency of the resonators), and a d.c. bias is applied to the junction. By observing the current voltage characteristic of the junction, a precise voltage, proportional to the frequency of the microwave drive signal, is obtained.

Magnetic-Flux-Compensated Voltage Divider

NASA Technical Reports Server (NTRS)

Mata, Carlos T.

2005-01-01

A magnetic-flux-compensated voltage-divider circuit has been proposed for use in measuring the true potential across a component that is exposed to large, rapidly varying electric currents like those produced by lightning strikes. An example of such a component is a lightning arrester, which is typically exposed to currents of the order of tens of kiloamperes, having rise times of the order of hundreds of nanoseconds. Traditional voltage-divider circuits are not designed for magnetic-flux-compensation: They contain uncompensated loops having areas large enough that the transient magnetic fluxes associated with large transient currents induce spurious voltages large enough to distort voltage-divider outputs significantly. A drawing of the proposed circuit was not available at the time of receipt of information for this article. What is known from a summary textual description is that the proposed circuit would contain a total of four voltage dividers: There would be two mixed dividers in parallel with each other and with the component of interest (e.g., a lightning arrester), plus two mixed dividers in parallel with each other and in series with the component of interest in the same plane. The electrical and geometric configuration would provide compensation for induced voltages, including those attributable to asymmetry in the volumetric density of the lightning or other transient current, canceling out the spurious voltages and measuring the true voltage across the component.

Apparatus and Method for Compensating for Process, Voltage, and Temperature Variation of the Time Delay of a Digital Delay Line

NASA Technical Reports Server (NTRS)

Seefeldt, James (Inventor); Feng, Xiaoxin (Inventor); Roper, Weston (Inventor)

2013-01-01

A process, voltage, and temperature (PVT) compensation circuit and a method of continuously generating a delay measure are provided. The compensation circuit includes two delay lines, each delay line providing a delay output. The two delay lines may each include a number of delay elements, which in turn may include one or more current-starved inverters. The number of delay lines may differ between the two delay lines. The delay outputs are provided to a combining circuit that determines an offset pulse based on the two delay outputs and then averages the voltage of the offset pulse to determine a delay measure. The delay measure may be one or more currents or voltages indicating an amount of PVT compensation to apply to input or output signals of an application circuit, such as a memory-bus driver, dynamic random access memory (DRAM), a synchronous DRAM, a processor or other clocked circuit.

Modeling power flow in the induction cavity with a two dimensional circuit simulation

NASA Astrophysics Data System (ADS)

Guo, Fan; Zou, Wenkang; Gong, Boyi; Jiang, Jihao; Chen, Lin; Wang, Meng; Xie, Weiping

2017-02-01

We have proposed a two dimensional (2D) circuit model of induction cavity. The oil elbow and azimuthal transmission line are modeled with one dimensional transmission line elements, while 2D transmission line elements are employed to represent the regions inward the azimuthal transmission line. The voltage waveforms obtained by 2D circuit simulation and transient electromagnetic simulation are compared, which shows satisfactory agreement. The influence of impedance mismatch on the power flow condition in the induction cavity is investigated with this 2D circuit model. The simulation results indicate that the peak value of load voltage approaches the maximum if the azimuthal transmission line roughly matches the pulse forming section. The amplitude of output transmission line voltage is strongly influenced by its impedance, but the peak value of load voltage is insensitive to the actual output transmission line impedance. When the load impedance raises, the voltage across the dummy load increases, and the pulse duration at the oil elbow inlet and insulator stack regions also slightly increase.

Microwatt power consumption maximum power point tracking circuit using an analogue differentiator for piezoelectric energy harvesting

NASA Astrophysics Data System (ADS)

Chew, Z. J.; Zhu, M.

2015-12-01

A maximum power point tracking (MPPT) scheme by tracking the open-circuit voltage from a piezoelectric energy harvester using a differentiator is presented in this paper. The MPPT controller is implemented by using a low-power analogue differentiator and comparators without the need of a sensing circuitry and a power hungry controller. This proposed MPPT circuit is used to control a buck converter which serves as a power management module in conjunction with a full-wave bridge diode rectifier. Performance of this MPPT control scheme is verified by using the prototyped circuit to track the maximum power point of a macro-fiber composite (MFC) as the piezoelectric energy harvester. The MFC was bonded on a composite material and the whole specimen was subjected to various strain levels at frequency from 10 to 100 Hz. Experimental results showed that the implemented full analogue MPPT controller has a tracking efficiency between 81% and 98.66% independent of the load, and consumes an average power of 3.187 μW at 3 V during operation.

A Responsive Battery with Controlled Energy Release.

PubMed

Wang, Xiaopeng; Gao, Jian; Cheng, Zhihua; Chen, Nan; Qu, Liangti

2016-11-14

A new type of responsive battery with the fascinating feature of pressure perceptibility has been developed, which can spontaneously, timely and reliably control the power outputs (e.g., current and voltage) in response to pressure changes. The device design is based on the structure of the Zn-air battery, in which graphene-coated sponge serves as pressure-sensitive air cathode that endows the whole system with the capability of self-controlled energy release. The responsive batteries exhibit superior battery performance with high open-circuit voltage (1.3 V), and competitive areal capacity of 1.25 mAh cm -2 . This work presents an important move towards next-generation intelligent energy storage devices with energy management function. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

ZERO SUPPRESSION FOR RECORDERS

DOEpatents

Fort, W.G.S.

1958-12-30

A zero-suppression circuit for self-balancing recorder instruments is presented. The essential elements of the circuit include a converter-amplifier having two inputs, one for a reference voltage and the other for the signal voltage under analysis, and a servomotor with two control windings, one coupled to the a-c output of the converter-amplifier and the other receiving a reference input. Each input circuit to the converter-amplifier has a variable potentiometer and the sliders of the potentiometer are ganged together for movement by the servoinotor. The particular noveity of the circuit resides in the selection of resistance values for the potentiometer and a resistor in series with the potentiometer of the signal circuit to ensure the full value of signal voltage variation is impressed on a recorder mechanism driven by servomotor.

Nonlinear interface between the piezoelectric harvesting structure and the modulating circuit of an energy harvester with a real storage battery.

PubMed

Hu, Yuantai; Xue, Huan; Hu, Ting; Hu, Hongping

2008-01-01

This paper studies the performance of an energy harvester with a piezoelectric bimorph (PB) and a real electrochemical battery (ECB), both are connected as an integrated system through a rectified dc-dc converter (DDC). A vibrating PB can scavenge energy from the operating environment by the electromechanical coupling. A DDC can effectively match the optimal output voltage of the harvesting structure to the battery voltage. To raise the output power density of PB, a synchronized switch harvesting inductor (SSHI) is used in parallel with the harvesting structure to reverse the voltage through charge transfer between the output electrodes at the transition moments from closed-to open-circuit. Voltage reversal results in earlier arrival of rectifier conduction because the output voltage phases of any two adjacent closed-circuit states are just opposite each other. In principle, a PB is with a smaller, flexural stiffness under closed-circuit condition than under open-circuit condition. Thus, the PB subjected to longer closed-circuit condition will be easier to be accelerated. A larger flexural velocity makes the PB to deflect with larger amplitude, which implies that more mechanical energy will be converted into an electric one. Nonlinear interface between the vibrating PB and the modulating circuit is analyzed in detail, and the effects of SSHI and DDC on the charging efficiency of the storage battery are researched numerically. It was found that the introduction of a DDC in the modulating circuit and an SSHI in the harvesting structure can raise the charging efficiency by several times.

Mechanisms limiting the performance of large grain polycrystalline silicon solar cells

NASA Technical Reports Server (NTRS)

Culik, J. S.; Alexander, P.; Dumas, K. A.; Wohlgemuth, J. W.

1984-01-01

The open-circuit voltage and short-circuit current of large-grain (1 to 10 mm grain diameter) polycrystalline silicon solar cells is determined by the minority-carrier diffusion length within the bulk of the grains. This was demonstrated by irradiating polycrystalline and single-crystal (Czochralski) silicon solar cells with 1 MeV electrons to reduce their bulk lifetime. The variation of short-circuit current with minority-carrier diffusion length for the polycrystalline solar cells is identical to that of the single-crystal solar cells. The open-circuit voltage versus short-circuit current characteristic of the polycrystalline solar cells for reduced diffusion lengths is also identical to that of the single-crystal solar cells. The open-circuit voltage of the polycrystalline solar cells is a strong function of quasi-neutral (bulk) recombination, and is reduced only slightly, if at all, by grain-boundary recombination.

Analysis and elimination method of the effects of cables on LVRT testing for offshore wind turbines

NASA Astrophysics Data System (ADS)

Jiang, Zimin; Liu, Xiaohao; Li, Changgang; Liu, Yutian

2018-02-01

The current state, characteristics and necessity of the low voltage ride through (LVRT) on-site testing for grid-connected offshore wind turbines are introduced firstly. Then the effects of submarine cables on the LVRT testing are analysed based on the equivalent circuit of the testing system. A scheme for eliminating the effects of cables on the proposed LVRT testing method is presented. The specified voltage dips are guaranteed to be in compliance with the testing standards by adjusting the ratio between the current limiting impedance and short circuit impedance according to the steady voltage relationship derived from the equivalent circuit. Finally, simulation results demonstrate that the voltage dips at the high voltage side of wind turbine transformer satisfy the requirements of testing standards.

Nanowire NMOS Logic Inverter Characterization.

PubMed

Hashim, Yasir

2016-06-01

This study is the first to demonstrate characteristics optimization of nanowire N-Channel Metal Oxide Semiconductor (NW-MOS) logic inverter. Noise margins and inflection voltage of transfer characteristics are used as limiting factors in this optimization. A computer-based model used to produce static characteristics of NW-NMOS logic inverter. In this research two circuit configuration of NW-NMOS inverter was studied, in first NW-NMOS circuit, the noise margin for (low input-high output) condition was very low. For second NMOS circuit gives excellent noise margins, and results indicate that optimization depends on applied voltage to the inverter. Increasing gate to source voltage with (2/1) nanowires ratio results better noise margins. Increasing of applied DC load transistor voltage tends to increasing in decreasing noise margins; decreasing this voltage will improve noise margins significantly.

Module Six: Parallel Circuits; Basic Electricity and Electronics Individualized Learning System.

ERIC Educational Resources Information Center

Bureau of Naval Personnel, Washington, DC.

In this module the student will learn the rules that govern the characteristics of parallel circuits; the relationships between voltage, current, resistance and power; and the results of common troubles in parallel circuits. The module is divided into four lessons: rules of voltage and current, rules for resistance and power, variational analysis,…

Network for minimizing current imbalances in a faradaic battery

DOEpatents

Wozniak, Walter; Haskins, Harold J.

1994-01-01

A circuit for connecting a faradaic battery with circuitry for monitoring the condition of the battery includes a plurality of voltage divider networks providing battery voltage monitoring nodes and includes compensating resistors connected with the networks to maintain uniform discharge currents through the cells of the battery. The circuit also provides a reduced common mode voltage requirement for the monitoring circuitry by referencing the divider networks to one-half the battery voltage.

IGBT Switching Characteristic Curve Embedded Half-Bridge MMC Modelling and Real Time Simulation Realization

NASA Astrophysics Data System (ADS)

Zhengang, Lu; Hongyang, Yu; Xi, Yang

2017-05-01

The Modular Multilevel Converter (MMC) is one of the most attractive topologies in recent years for medium or high voltage industrial applications, such as high voltage dc transmission (HVDC) and medium voltage varying speed motor drive. The wide adoption of MMCs in industry is mainly due to its flexible expandability, transformer-less configuration, common dc bus, high reliability from redundancy, and so on. But, when the sub module number of MMC is more, the test of MMC controller will cost more time and effort. Hardware in the loop test based on real time simulator will save a lot of time and money caused by the MMC test. And due to the flexible of HIL, it becomes more and more popular in the industry area. The MMC modelling method remains an important issue for the MMC HIL test. Specifically, the VSC model should realistically reflect the nonlinear device switching characteristics, switching and conduction losses, tailing current, and diode reverse recovery behaviour of a realistic converter. In this paper, an IGBT switching characteristic curve embedded half-bridge MMC modelling method is proposed. This method is based on the switching curve referring and sample circuit calculation, and it is sample for implementation. Based on the proposed method, a FPGA real time simulation is carried out with 200ns sample time. The real time simulation results show the proposed method is correct.

Metal-Insulator-Semiconductor Nanowire Network Solar Cells.

PubMed

Oener, Sebastian Z; van de Groep, Jorik; Macco, Bart; Bronsveld, Paula C P; Kessels, W M M; Polman, Albert; Garnett, Erik C

2016-06-08

Metal-insulator-semiconductor (MIS) junctions provide the charge separating properties of Schottky junctions while circumventing the direct and detrimental contact of the metal with the semiconductor. A passivating and tunnel dielectric is used as a separation layer to reduce carrier recombination and remove Fermi level pinning. When applied to solar cells, these junctions result in two main advantages over traditional p-n-junction solar cells: a highly simplified fabrication process and excellent passivation properties and hence high open-circuit voltages. However, one major drawback of metal-insulator-semiconductor solar cells is that a continuous metal layer is needed to form a junction at the surface of the silicon, which decreases the optical transmittance and hence short-circuit current density. The decrease of transmittance with increasing metal coverage, however, can be overcome by nanoscale structures. Nanowire networks exhibit precisely the properties that are required for MIS solar cells: closely spaced and conductive metal wires to induce an inversion layer for homogeneous charge carrier extraction and simultaneously a high optical transparency. We experimentally demonstrate the nanowire MIS concept by using it to make silicon solar cells with a measured energy conversion efficiency of 7% (∼11% after correction), an effective open-circuit voltage (Voc) of 560 mV and estimated short-circuit current density (Jsc) of 33 mA/cm(2). Furthermore, we show that the metal nanowire network can serve additionally as an etch mask to pattern inverted nanopyramids, decreasing the reflectivity substantially from 36% to ∼4%. Our extensive analysis points out a path toward nanowire based MIS solar cells that exhibit both high Voc and Jsc values.

Optimization of discharge circuit of the TEA CO II laser with two discharge channels

NASA Astrophysics Data System (ADS)

Hu, Xiao Yong; Zhang, LiLi; Ren, DeMing; Qu, YanChen; Zhao, WeiJiang; Song, BaoAn

2007-01-01

In order to achieve the highest peak power of radiation pulse and highest output energy, the primary circuit parameters are investigated to optimize the discharge circuit performance of the laser. The structure and the discharge circuit of the laser are discussed at first. To realize synchronous discharge in two discharge channels, the conjunct electrode device for two pairs of discharge electrodes is designed. Finally, the results of the experiments on the primary circuit parameters are given. The discharge is most stable at a pressure of 5.33×10 4Pa when the pressure of gaseous mixture CO II:N II:He=1:1:3 is changed from 2.67×10 4 Pa to 6.67×10 4 Pa. The ratio of storage capacitance to peak capacitance is chosen to be about 1.5-7/3, because residual voltage is lower on this condition and residual voltage is adverse to discharge. When the inductance 330μH is used, the homogeneous glow discharge in a widest voltage range is obtained. The duration of when the stimuli voltage is increased in homogeneous glow discharge condition. The discharge circuit allows charge and discharge and the magnitude of residual voltage decrease the homogeneous glow discharge in a wide range of pressure of gaseous mixture when these circuit parameters are used. Thus it offers reference to the improvement of output characteristic of TEA CO II laser with two discharge channels.

Design and Implementation of Readout Circuit with Threshold Voltage Compensation on Glass Substrate for Touch Panel Applications

NASA Astrophysics Data System (ADS)

Lin, Yu-Ta; Ker, Ming-Dou; Wang, Tzu-Ming

2011-03-01

A new on-panel readout circuit with threshold voltage compensation for capacitive sensor in low temperature polycrystalline silicon (poly-Si) thin-film transistor (LTPS-TFT) process has been proposed. In order to compensate the threshold voltage variation from LTPS process variation, the proposed readout circuit applies a novel compensation approach with switch capacitor technique. In addition, a 4-bit analog-to-digital converter (ADC) is added to identify different sensed capacitor values and further enhances the overall resolution of touch panel.

Detonation control

DOEpatents

Mace, Jonathan L.; Seitz, Gerald J.; Bronisz, Lawrence E.

2016-10-25

Detonation control modules and detonation control circuits are provided herein. A trigger input signal can cause a detonation control module to trigger a detonator. A detonation control module can include a timing circuit, a light-producing diode such as a laser diode, an optically triggered diode, and a high-voltage capacitor. The trigger input signal can activate the timing circuit. The timing circuit can control activation of the light-producing diode. Activation of the light-producing diode illuminates and activates the optically triggered diode. The optically triggered diode can be coupled between the high-voltage capacitor and the detonator. Activation of the optically triggered diode causes a power pulse to be released from the high-voltage capacitor that triggers the detonator.

Faster Evolution of More Multifunctional Logic Circuits

NASA Technical Reports Server (NTRS)

Stoica, Adrian; Zebulum, Ricardo

2005-01-01

A modification in a method of automated evolutionary synthesis of voltage-controlled multifunctional logic circuits makes it possible to synthesize more circuits in less time. Prior to the modification, the computations for synthesizing a four-function logic circuit by this method took about 10 hours. Using the method as modified, it is possible to synthesize a six-function circuit in less than half an hour. The concepts of automated evolutionary synthesis and voltage-controlled multifunctional logic circuits were described in a number of prior NASA Tech Briefs articles. To recapitulate: A circuit is designed to perform one of several different logic functions, depending on the value of an applied control voltage. The circuit design is synthesized following an automated evolutionary approach that is so named because it is modeled partly after the repetitive trial-and-error process of biological evolution. In this process, random populations of integer strings that encode electronic circuits play a role analogous to that of chromosomes. An evolved circuit is tested by computational simulation (prior to testing in real hardware to verify a final design). Then, in a fitness-evaluation step, responses of the circuit are compared with specifications of target responses and circuits are ranked according to how close they come to satisfying specifications. The results of the evaluation provide guidance for refining designs through further iteration.

Inexpensive system protects megawatt resistance-heating furnace against high-voltage surges

NASA Technical Reports Server (NTRS)

Stearns, E. J.

1971-01-01

Coolant gas extinguishes arcing across the break in a heater element. Air-gap shunt which bypasses high voltage impressed across the circuit prevents damage if the resistance elements break and open the inductive circuit.

Investigation of short-circuit failure mechanisms of SiC MOSFETs by varying DC bus voltage

NASA Astrophysics Data System (ADS)

Namai, Masaki; An, Junjie; Yano, Hiroshi; Iwamuro, Noriyuki

2018-07-01

In this study, the experimental evaluation and numerical analysis of short-circuit mechanisms of 1200 V SiC planar and trench MOSFETs were conducted at various DC bus voltages from 400 to 800 V. Investigation of the impact of DC bus voltage on short-circuit capability yielded results that are extremely useful for many existing power electronics applications. Three failure mechanisms were identified in this study: thermal runaway, MOS channel current following device turn-off, and rupture of the gate oxide layer (gate oxide layer damage). The SiC MOSFETs experienced lattice temperatures exceeding 1000 K during the short-circuit transient; as Si insulated gate bipolar transistors (IGBTs) are not typically subject to such temperatures, the MOSFETs experienced distinct failure modes, and the mode experienced was significantly influenced by the DC bus voltage. In conclusion, suggestions regarding the SiC MOSFET design and operation methods that would enhance device robustness are proposed.

ELECTRONIC MULTIPLIER CIRCUIT

DOEpatents

Thomas, R.E.

1959-08-25

An electronic multiplier circuit is described in which an output voltage having an amplitude proportional to the product or quotient of the input signals is accomplished in a novel manner which facilitates simplicity of circuit construction and a high degree of accuracy in accomplishing the multiplying and dividing function. The circuit broadly comprises a multiplier tube in which the plate current is proportional to the voltage applied to a first control grid multiplied by the difference between voltage applied to a second control grid and the voltage applied to the first control grid. Means are provided to apply a first signal to be multiplied to the first control grid together with means for applying the sum of the first signal to be multiplied and a second signal to be multiplied to the second control grid whereby the plate current of the multiplier tube is proportional to the product of the first and second signals to be multiplied.

Recombination in polymer-fullerene bulk heterojunction solar cells

NASA Astrophysics Data System (ADS)

Cowan, Sarah R.; Roy, Anshuman; Heeger, Alan J.

2010-12-01

Recombination of photogenerated charge carriers in polymer bulk heterojunction (BHJ) solar cells reduces the short circuit current (Jsc) and the fill factor (FF). Identifying the mechanism of recombination is, therefore, fundamentally important for increasing the power conversion efficiency. Light intensity and temperature-dependent current-voltage measurements on polymer BHJ cells made from a variety of different semiconducting polymers and fullerenes show that the recombination kinetics are voltage dependent and evolve from first-order recombination at short circuit to bimolecular recombination at open circuit as a result of increasing the voltage-dependent charge carrier density in the cell. The “missing 0.3 V” inferred from comparison of the band gaps of the bulk heterojunction materials and the measured open-circuit voltage at room-temperature results from the temperature dependence of the quasi-Fermi levels in the polymer and fullerene domains—a conclusion based on the fundamental statistics of fermions.

Optimizing MOS-gated thyristor using voltage-based equivalent circuit model for designing steep-subthreshold-slope PN-body-tied silicon-on-insulator FET

NASA Astrophysics Data System (ADS)

Ueda, Daiki; Takeuchi, Kiyoshi; Kobayashi, Masaharu; Hiramoto, Toshiro

2018-04-01

A new circuit model that provides a clear guide on designing a MOS-gated thyristor (MGT) is reported. MGT plays a significant role in achieving a steep subthreshold slope of a PN-body tied silicon-on-insulator (SOI) FET (PNBTFET), which is an SOI MOSFET merged with an MGT. The effects of design parameters on MGT and the proposed equivalent circuit model are examined to determine how to regulate the voltage response of MGT and how to suppress power dissipation. It is demonstrated that MGT with low threshold voltages, small hysteresis widths, and small power dissipation can be designed by tuning design parameters. The temperature dependence of MGT is also examined, and it is confirmed that hysteresis width decreases with the average threshold voltage kept nearly constant as temperature rises. The equivalent circuit model can be conveniently used to design low-power PNBTFET.

Development of a digital solar simulator based on full-bridge converter

NASA Astrophysics Data System (ADS)

Liu, Chen; Feng, Jian; Liu, Zhilong; Tong, Weichao; Ji, Yibo

2014-02-01

With the development of solar photovoltaic, distribution schemes utilized in power grid had been commonly application, and photovoltaic (PV) inverter is an essential equipment in grid. In this paper, a digital solar simulator based on full-bridge structure is presented. The output characteristic curve of system is electrically similar to silicon solar cells, which can greatly simplify research methods of PV inverter, improve the efficiency of research and development. The proposed simulator consists on a main control board based on TM320F28335, phase-shifted zero-voltage-switching (ZVS) DC-DC full-bridge converter and voltage and current sampling circuit, that allows emulating the voltage-current curve with the open-circuit voltage (Voc) of 900V and the short-circuit current (Isc) of 18A .When the system connected to a PV inverter, the inverter can quickly track from the open-circuit to the maximum power point and keep stability.

Transceiver Design for CMUT-Based Super-Resolution Ultrasound Imaging.

PubMed

Behnamfar, Parisa; Molavi, Reza; Mirabbasi, Shahriar

2016-04-01

A recently introduced structure for the capacitive micromachined ultrasonic transducers (CMUTs) has focused on the applications of the asymmetric mode of vibration and has shown promising results in construction of super-resolution ultrasound images. This paper presents the first implementation and experimental results of a transceiver circuit to interface such CMUT structures. The multiple input/multiple output receiver in this work supports both fundamental and asymmetric modes of operation and includes transimpedance amplifiers and low-power variable-gain stages. These circuit blocks are designed considering the trade-offs between gain, input impedance, noise, linearity and power consumption. The high-voltage transmitter can generate pulse voltages up to 60 V while occupying a considerably small area. The overall circuit is designed and laid out in a 0.35 μm CMOS process and a four-channel transceiver occupies 0.86 × 0.38 mm(2). The prototype chip is characterized in both electrical and mechanical domains. Measurement results show that each receiver channel has a nominal gain of 110 dBΩ with a 3 dB bandwidth of 9 MHz while consuming 1.02 mW from a 3.3 V supply. The receiver is also highly linear, with 1 dB compression point of minimum 1.05 V which is considerably higher than the previously reported designs. The transmitter consumes 98.1 mW from a 30 V supply while generating 1.38 MHz, 30 V pulses. The CMOS-CMUT system is tested in the transmit mode and shows full functionality in air medium.

Origin of Reduced Open-Circuit Voltage in Highly Efficient Small-Molecule-Based Solar Cells upon Solvent Vapor Annealing.

PubMed

Deng, Wanyuan; Gao, Ke; Yan, Jun; Liang, Quanbin; Xie, Yuan; He, Zhicai; Wu, Hongbin; Peng, Xiaobin; Cao, Yong

2018-03-07

In this study, we demonstrate that remarkably reduced open-circuit voltage in highly efficient organic solar cells (OSCs) from a blend of phenyl-C 61 -butyric acid methyl ester and a recently developed conjugated small molecule (DPPEZnP-THD) upon solvent vapor annealing (SVA) is due to two independent sources: increased radiative recombination and increased nonradiative recombination. Through the measurements of electroluminescence due to the emission of the charge-transfer state and photovoltaic external quantum efficiency measurement, we can quantify that the open-circuit voltage losses in a device with SVA due to the radiative recombination and nonradiative recombination are 0.23 and 0.31 V, respectively, which are 0.04 and 0.07 V higher than those of the as-cast device. Despite of the reduced open-circuit voltage, the device with SVA exhibited enhanced dissociation of charge-transfer excitons, leading to an improved short-circuit current density and a remarkable power conversion efficiency (PCE) of 9.41%, one of the best for solution-processed OSCs based on small-molecule donor materials. Our study also clearly shows that removing the nonradiative recombination pathways and/or suppressing energetic disorder in the active layer would result in more long-lived charge carriers and enhanced open-circuit voltage, which are prerequisites for further improving the PCE.

Piezoelectric MEMS switch to activate event-driven wireless sensor nodes

NASA Astrophysics Data System (ADS)

Nogami, H.; Kobayashi, T.; Okada, H.; Makimoto, N.; Maeda, R.; Itoh, T.

2013-09-01

We have developed piezoelectric microelectromechanical systems (MEMS) switches and applied them to ultra-low power wireless sensor nodes, to monitor the health condition of chickens. The piezoelectric switches have ‘S’-shaped piezoelectric cantilevers with a proof mass. Since the resonant frequency of the piezoelectric switches is around 24 Hz, we have utilized their superharmonic resonance to detect chicken movements as low as 5-15 Hz. When the vibration frequency is 4, 6 and 12 Hz, the piezoelectric switches vibrate at 0.5 m s-2 and generate 3-5 mV output voltages with superharmonic resonance. In order to detect such small piezoelectric output voltages, we employ comparator circuits that can be driven at low voltages, which can set the threshold voltage (Vth) from 1 to 31 mV with a 1 mV increment. When we set Vth at 4 mV, the output voltages of the piezoelectric MEMS switches vibrate below 15 Hz with amplitudes above 0.3 m s-2 and turn on the comparator circuits. Similarly, by setting Vth at 5 mV, the output voltages turn on the comparator circuits with vibrations above 0.4 m s-2. Furthermore, setting Vth at 10 mV causes vibrations above 0.5 m s-2 that turn on the comparator circuits. These results suggest that we can select small or fast chicken movements to utilize piezoelectric MEMS switches with comparator circuits.

Differential Amplifier with Current-Mirror Load: Influence of Current Gain, Early Voltage, and Supply Voltage on the DC Output Voltage

ERIC Educational Resources Information Center

Paulik, G. F.; Mayer, R. P.

2012-01-01

A differential amplifier composed of an emitter-coupled pair is useful as an example in lecture presentations and laboratory experiments in electronic circuit analysis courses. However, in an active circuit with zero input load V[subscript id], both laboratory measurements and PSPICE and LTspice simulation results for the output voltage…

METHOD OF LOCATING GROUNDS

DOEpatents

Macleish, K.G.

1958-02-11

ABS>This patent presents a method for locating a ground in a d-c circult having a number of parallel branches connected across a d-c source or generator. The complete method comprises the steps of locating the ground with reference to the mildpoint of the parallel branches by connecting a potentiometer across the terminals of the circuit and connecting the slider of the potentiometer to ground through a current indicating instrument, adjusting the slider to right or left of the mildpoint so as to cause the instrument to indicate zero, connecting the terminal of the network which is farthest from the ground as thus indicated by the potentiometer to ground through a condenser, impressing a ripple voltage on the circuit, and then measuring the ripple voltage at the midpoint of each parallel branch to find the branch in which is the lowest value of ripple voltage, and then measuring the distribution of the ripple voltage along this branch to determine the point at which the ripple voltage drops off to zero or substantially zero due to the existence of a ground. The invention has particular application where a circuit ground is present which will disappear if the normal circuit voltage is removed.

Symmetry-breaking charge transfer in a zinc chlorodipyrrin acceptor for high open circuit voltage organic photovoltaics.

PubMed

Bartynski, Andrew N; Gruber, Mark; Das, Saptaparna; Rangan, Sylvie; Mollinger, Sonya; Trinh, Cong; Bradforth, Stephen E; Vandewal, Koen; Salleo, Alberto; Bartynski, Robert A; Bruetting, Wolfgang; Thompson, Mark E

2015-04-29

Low open-circuit voltages significantly limit the power conversion efficiency of organic photovoltaic devices. Typical strategies to enhance the open-circuit voltage involve tuning the HOMO and LUMO positions of the donor (D) and acceptor (A), respectively, to increase the interfacial energy gap or to tailor the donor or acceptor structure at the D/A interface. Here, we present an alternative approach to improve the open-circuit voltage through the use of a zinc chlorodipyrrin, ZCl [bis(dodecachloro-5-mesityldipyrrinato)zinc], as an acceptor, which undergoes symmetry-breaking charge transfer (CT) at the donor/acceptor interface. DBP/ZCl cells exhibit open-circuit voltages of 1.33 V compared to 0.88 V for analogous tetraphenyldibenzoperyflanthrene (DBP)/C60-based devices. Charge transfer state energies measured by Fourier-transform photocurrent spectroscopy and electroluminescence show that C60 forms a CT state of 1.45 ± 0.05 eV in a DBP/C60-based organic photovoltaic device, while ZCl as acceptor gives a CT state energy of 1.70 ± 0.05 eV in the corresponding device structure. In the ZCl device this results in an energetic loss between E(CT) and qV(OC) of 0.37 eV, substantially less than the 0.6 eV typically observed for organic systems and equal to the recombination losses seen in high-efficiency Si and GaAs devices. The substantial increase in open-circuit voltage and reduction in recombination losses for devices utilizing ZCl demonstrate the great promise of symmetry-breaking charge transfer in organic photovoltaic devices.

PHASE DETECTOR

DOEpatents

Kippenhan, D.O.

1959-09-01

A phase detector circuit is described for use at very high frequencies of the order of 50 megacycles. The detector circuit includes a pair of rectifiers inverted relative to each other. One voltage to be compared is applied to the two rectifiers in phase opposition and the other voltage to be compared is commonly applied to the two rectifiers. The two result:ng d-c voltages derived from the rectifiers are combined in phase opposition to produce a single d-c voltage having amplitude and polarity characteristics dependent upon the phase relation between the signals to be compared. Principal novelty resides in the employment of a half-wave transmission line to derive the phase opposing signals from the first voltage to be compared for application to the two rectifiers in place of the transformer commonly utilized for such purpose in phase detector circuits for operation at lower frequency.

High voltage power supply

NASA Technical Reports Server (NTRS)

Ruitberg, A. P.; Young, K. M. (Inventor)

1985-01-01

A high voltage power supply is formed by three discrete circuits energized by a battery to provide a plurality of concurrent output signals floating at a high output voltage on the order of several tens of kilovolts. In the first two circuits, the regulator stages are pulse width modulated and include adjustable ressistances for varying the duty cycles of pulse trains provided to corresponding oscillator stages while the third regulator stage includes an adjustable resistance for varying the amplitude of a steady signal provided to a third oscillator stage. In the first circuit, the oscillator, formed by a constant current drive network and a tuned resonant network included a step up transformer, is coupled to a second step up transformer which, in turn, supplies an amplified sinusoidal signal to a parallel pair of complementary poled rectifying, voltage multiplier stages to generate the high output voltage.

Controlled conjugated backbone twisting for an increased open-circuit voltage while having a high short-circuit current in poly(hexylthiophene) derivatives.

PubMed

Ko, Sangwon; Hoke, Eric T; Pandey, Laxman; Hong, Sanghyun; Mondal, Rajib; Risko, Chad; Yi, Yuanping; Noriega, Rodrigo; McGehee, Michael D; Brédas, Jean-Luc; Salleo, Alberto; Bao, Zhenan

2012-03-21

Conjugated polymers with nearly planar backbones have been the most commonly investigated materials for organic-based electronic devices. More twisted polymer backbones have been shown to achieve larger open-circuit voltages in solar cells, though with decreased short-circuit current densities. We systematically impose twists within a family of poly(hexylthiophene)s and examine their influence on the performance of polymer:fullerene bulk heterojunction (BHJ) solar cells. A simple chemical modification concerning the number and placement of alkyl side chains along the conjugated backbone is used to control the degree of backbone twisting. Density functional theory calculations were carried out on a series of oligothiophene structures to provide insights on how the sterically induced twisting influences the geometric, electronic, and optical properties. Grazing incidence X-ray scattering measurements were performed to investigate how the thin-film packing structure was affected. The open-circuit voltage and charge-transfer state energy of the polymer:fullerene BHJ solar cells increased substantially with the degree of twist induced within the conjugated backbone--due to an increase in the polymer ionization potential--while the short-circuit current decreased as a result of a larger optical gap and lower hole mobility. A controlled, moderate degree of twist along the poly(3,4-dihexyl-2,2':5',2''-terthiophene) (PDHTT) conjugated backbone led to a 19% enhancement in the open-circuit voltage (0.735 V) vs poly(3-hexylthiophene)-based devices, while similar short-circuit current densities, fill factors, and hole-carrier mobilities were maintained. These factors resulted in a power conversion efficiency of 4.2% for a PDHTT:[6,6]-phenyl-C(71)-butyric acid methyl ester (PC(71)BM) blend solar cell without thermal annealing. This simple approach reveals a molecular design avenue to increase open-circuit voltage while retaining the short-circuit current.

Voltage controlled oscillator is easily aligned, has low phase noise

NASA Technical Reports Server (NTRS)

Sydnor, R. L.

1965-01-01

Voltage Controlled Oscillator /VCO/, represented by an equivalent RF circuit, is easily adjusted for optimum performance by varying the circuit parameter. It contains a crystal drive level which is also easily adjusted to obtain minimum phase noise.

Electronic circuit provides accurate sensing and control of dc voltage

NASA Technical Reports Server (NTRS)

Loftus, W. D.

1966-01-01

Electronic circuit used relay coil to sense and control dc voltage. The control relay is driven by a switching transistor that is biased to cutoff for all input up to slightly less than the threshold level.

Fuse protects circuit from voltage and current overloads

NASA Technical Reports Server (NTRS)

Casey, L. O.

1969-01-01

Low-melting resistor connected in series with the load protects the circuit against current overloads. It protects test subjects and patients being monitored by electronic instrumentation from inadvertant overloads of current, and sensitive electronic equipment against high-voltage damage.

Miniaturized two-stack Blumlein pulser with a variable repetition-rate for non-thermal irreversible-electroporation experiments

NASA Astrophysics Data System (ADS)

Min, Sun-Hong; Kwon, Ohjoon; Sattorov, Matlabjon; Baek, In-Keun; Kim, Seontae; Jeong, Jin-Young; Hong, Dongpyo; Park, Seunghyuk; Park, Gun-Sik

2017-01-01

Non-thermal irreversible electroporation (NTIRE) to avoid thermal damage to cells during intense DC ns pulsed electric fields (nsPEFs) is a recent modality for medical applications. This mechanism, related to bioelectrical dynamics of the cell, is linked to the effect of a DC electric field and a threshold effect with an electrically stimulated membrane for the charge distribution in the cell. To create the NTIRE condition, the pulse width of the nsPEF should be shorter than the charging time constant of the membrane related to the cell radius, membrane capacitance, cytoplasm resistivity, and medium resistivity. It is necessary to design and fabricate a very intense nanosecond DC electric field pulser that is capable of producing voltages up to the level of 100 kV/cm with an artificial pulse width (˜ns) with controllable repetition rates. Many devices to generate intense DC nsPEF using various pulse-forming line technologies have been introduced thus far. However, the previous Blumlein pulse-generating devices are clearly inefficient due to the energy loss between the input voltage and the output voltage. An improved two-stage stacked Blumlein pulse-forming line can overcome this limitation and decrease the energy loss from a DC power supply. A metal oxide silicon field-effect transistor switch with a fast rise and fall time would enable a high repetition rate (max. 100 kHz) and good endurance against very high voltages (DC ˜ 30 kV). The load is designed to match the sample for exposure to cell suspensions consisting of a 200 Ω resistor matched with a Blumlein circuit and two electrodes without the characteristic RC time effect of the circuit (capacitance =0.174 pF).

High-power converters for space applications

NASA Technical Reports Server (NTRS)

Park, J. N.; Cooper, Randy

1991-01-01

Phase 1 was a concept definition effort to extend space-type dc/dc converter technology to the megawatt level with a weight of less than 0.1 kg/kW (220 lb./MW). Two system designs were evaluated in Phase 1. Each design operates from a 5 kV stacked fuel cell source and provides a voltage step-up to 100 kV at 10 A for charging capacitors (100 pps at a duty cycle of 17 min on, 17 min off). Both designs use an MCT-based, full-bridge inverter, gaseous hydrogen cooling, and crowbar fault protection. The GE-CRD system uses an advanced high-voltage transformer/rectifier filter is series with a resonant tank circuit, driven by an inverter operating at 20 to 50 kHz. Output voltage is controlled through frequency and phase shift control. Fast transient response and stability is ensured via optimal control. Super-resonant operation employing MCTs provides the advantages of lossless snubbing, no turn-on switching loss, use of medium-speed diodes, and intrinsic current limiting under load-fault conditions. Estimated weight of the GE-CRD system is 88 kg (1.5 cu ft.). Efficiency of 94.4 percent and total system loss is 55.711 kW operating at 1 MW load power. The Maxwell system is based on a resonance transformer approach using a cascade of five LC resonant sections at 100 kHz. The 5 kV bus is converted to a square wave, stepped-up to a 100 kV sine wave by the LC sections, rectified, and filtered. Output voltage is controlled with a special series regulator circuit. Estimated weight of the Maxwell system is 83.8 kg (4.0 cu ft.). Efficiency is 87.2 percent and total system loss is 146.411 kW operating at 1 MW load power.

CIRCUITS FOR CURRENT MEASUREMENTS

DOEpatents

Cox, R.J.

1958-11-01

Circuits are presented for measurement of a logarithmic scale of current flowing in a high impedance. In one form of the invention the disclosed circuit is in combination with an ionization chamber to measure lonization current. The particular circuit arrangement lncludes a vacuum tube having at least one grid, an ionization chamber connected in series with a high voltage source and the grid of the vacuum tube, and a d-c amplifier feedback circuit. As the ionization chamber current passes between the grid and cathode of the tube, the feedback circuit acts to stabilize the anode current, and the feedback voltage is a measure of the logaritbm of the ionization current.

Solid state light source driver establishing buck or boost operation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palmer, Fred

A solid state light source driver circuit that operates in either a buck convertor or a boost convertor configuration is provided. The driver circuit includes a controller, a boost switch circuit and a buck switch circuit, each coupled to the controller, and a feedback circuit, coupled to the light source. The feedback circuit provides feedback to the controller, representing a DC output of the driver circuit. The controller controls the boost switch circuit and the buck switch circuit in response to the feedback signal, to regulate current to the light source. The controller places the driver circuit in its boostmore » converter configuration when the DC output is less than a rectified AC voltage coupled to the driver circuit at an input node. The controller places the driver circuit in its buck converter configuration when the DC output is greater than the rectified AC voltage at the input node.« less

High voltage bus and auxiliary heater control system for an electric or hybrid vehicle

DOEpatents

Murty, Balarama Vempaty

2000-01-01

A control system for an electric or hybrid electric vehicle includes a vehicle system controller and a control circuit having an electric immersion heater. The heater is electrically connected to the vehicle's high voltage bus and is thermally coupled to a coolant loop containing a heater core for the vehicle's climate control system. The system controller responds to cabin heat requests from the climate control system by generating a pulse width modulated signal that is used by the control circuit to operate the heater at a duty cycle appropriate for the amount of cabin heating requested. The control system also uses the heater to dissipate excess energy produced by an auxiliary power unit and to provide electric braking when regenerative braking is not desirable and manual braking is not necessary. The control system further utilizes the heater to provide a safe discharge of a bank of energy storage capacitors following disconnection of the battery or one of the high voltage connectors used to transmit high voltage operating power to the various vehicle systems. The control circuit includes a high voltage clamping circuit that monitors the voltage on the bus and operates the heater to clamp down the bus voltage when it exceeds a pre-selected maximum voltage. The control system can also be used to phase in operation of the heater when the bus voltage exceeds a lower threshold voltage and can be used to phase out the auxiliary power unit charging and regenerative braking when the battery becomes fully charged.

Programmable Low-Voltage Circuit Breaker and Tester

NASA Technical Reports Server (NTRS)

Greenfield, Terry

2008-01-01

An instrumentation system that would comprise a remotely controllable and programmable low-voltage circuit breaker plus several electric-circuit-testing subsystems has been conceived, originally for use aboard a spacecraft during all phases of operation from pre-launch testing through launch, ascent, orbit, descent, and landing. The system could also be adapted to similar use aboard aircraft. In comparison with remotely controllable circuit breakers heretofore commercially available, this system would be smaller, less massive, and capable of performing more functions, as needed for aerospace applications.

Single-Event Transients in Voltage Regulators

NASA Technical Reports Server (NTRS)

Johnston, Allan H.; Miyahira, Tetsuo F.; Irom, F.; Laird, Jamie S.

2006-01-01

Single-event transients are investigated for two voltage regulator circuits that are widely used in space. A circuit-level model is developed that can be used to determine how transients are affected by different circuit application conditions. Internal protection circuits-which are affected by load as well as internal thermal effects-can also be triggered from heavy ions, causing dropouts or shutdown ranging from milliseconds to seconds. Although conventional output transients can be reduced by adding load capacitance, that approach is ineffective for dropouts from protection circuitry.

Fast, Low-Power, Hysteretic Level-Detector Circuit

NASA Technical Reports Server (NTRS)

Arditti, Mordechai

1993-01-01

Circuit for detection of preset levels of voltage or current intended to replace standard fast voltage comparator. Hysteretic analog/digital level detector operates at unusually low power with little sacrifice of speed. Comprises low-power analog circuit and complementary metal oxide/semiconductor (CMOS) digital circuit connected in overall closed feedback loop to decrease rise and fall times, provide hysteresis, and trip-level control. Contains multiple subloops combining linear and digital feedback. Levels of sensed signals and hysteresis level easily adjusted by selection of components to suit specific application.

Compensated count-rate circuit for radiation survey meter

DOEpatents

Todd, Richard A.

1981-01-01

A count-rate compensating circuit is provided which may be used in a portable Geiger-Mueller (G-M) survey meter to ideally compensate for counting loss errors in the G-M tube detector. In a G-M survey meter, wherein the pulse rate from the G-M tube is converted into a pulse rate current applied to a current meter calibrated to indicate dose rate, the compensated circuit generates and controls a reference voltage in response to the rate of pulses from the detector. This reference voltage is gated to the current-generating circuit at a rate identical to the rate of pulses coming from the detector so that the current flowing through the meter is varied in accordance with both the frequency and amplitude of the reference voltage pulses applied thereto so that the count rate is compensated ideally to indicate a true count rate within 1% up to a 50% duty cycle for the detector. A positive feedback circuit is used to control the reference voltage so that the meter output tracks true count rate indicative of the radiation dose rate.

Compensated count-rate circuit for radiation survey meter

DOEpatents

Todd, R.A.

1980-05-12

A count-rate compensating circuit is provided which may be used in a portable Geiger-Mueller (G-M) survey meter to ideally compensate for couting loss errors in the G-M tube detector. In a G-M survey meter, wherein the pulse rate from the G-M tube is converted into a pulse rate current applied to a current meter calibrated to indicate dose rate, the compensation circuit generates and controls a reference voltage in response to the rate of pulses from the detector. This reference voltage is gated to the current-generating circuit at a rate identical to the rate of pulses coming from the detector so that the current flowing through the meter is varied in accordance with both the frequency and amplitude of the reference voltage pulses applied thereto so that the count rate is compensated ideally to indicate a true count rate within 1% up to a 50% duty cycle for the detector. A positive feedback circuit is used to control the reference voltage so that the meter output tracks true count rate indicative of the radiation dose rate.

Conduction-coupled Tesla transformer.

PubMed

Reed, J L

2015-03-01

A proof-of-principle Tesla transformer circuit is introduced. The new transformer exhibits the high voltage-high power output signal of shock-excited transformers. The circuit, with specification of proper circuit element values, is capable of obtaining extreme oscillatory voltages. The primary and secondary portions of the circuit communicate solely by conduction. The destructive arcing between the primary and secondary inductors in electromagnetically coupled transformers is ubiquitous. Flashover is eliminated in the new transformer as the high-voltage inductors do not interpenetrate and so do not possess an annular volume of electric field. The inductors are remote from one another. The high voltage secondary inductor is isolated in space, except for a base feed conductor, and obtains earth by its self-capacitance to the surroundings. Governing equations, for the ideal case of no damping, are developed from first principles. Experimental, theoretical, and circuit simulator data are presented for the new transformer. Commercial high-temperature superconductors are discussed as a means to eliminate the counter-intuitive damping due to small primary inductances in both the electromagnetic-coupled and new conduction-coupled transformers.

Evaluation of biasing and protection circuitry components for cryogenic MMIC low-noise amplifiers

NASA Astrophysics Data System (ADS)

Lamb, James W.

2014-05-01

Millimeter-wave integrated circuits with gate lengths as short as 35 nm are demonstrating extremely low-noise performance, especially when cooled to cryogenic temperatures. These operate at low voltages and are susceptible to damage from electrostatic discharge and improper biasing, as well as being sensitive to low-level interference. Designing a protection circuit for low voltages and temperatures is challenging because there is very little data available on components that may be suitable. Extensive testing at low temperatures yielded a set of components and a circuit topology that demonstrates the required level of protection for critical MMICs and similar devices. We present a circuit that provides robust protection for low voltage devices from room temperature down to 4 K.

Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery

NASA Astrophysics Data System (ADS)

Cheng, Zai-Jun; San, Hai-Sheng; Chen, Xu-Yuan; Liu, Bo; Feng, Zhi-Hong

2011-07-01

A high open-circuit voltage betavoltaic microbattery based on a GaN p-i-n diode is demonstrated. Under the irradiation of a 4×4 mm2 planar solid 63Ni source with an activity of 2 mCi, the open-circuit voltage Voc of the fabricated single 2×2mm2 cell reaches as high as 1.62 V, the short-circuit current density Jsc is measured to be 16nA/cm2. The microbattery has a fill factor of 55%, and the energy conversion efficiency of beta radiation into electricity reaches to 1.13%. The results suggest that GaN is a highly promising potential candidate for long-life betavoltaic microbatteries used as power supplies for microelectromechanical system devices.

Integrated circuit electrometer and sweep circuitry for an atmospheric probe

NASA Technical Reports Server (NTRS)

Zimmerman, L. E.

1971-01-01

The design of electrometer circuitry using an integrated circuit operational amplifier with a MOSFET input is described. Input protection against static voltages is provided by a dual ultra low leakage diode or a neon lamp. Factors affecting frequency response leakage resistance, and current stability are discussed, and methods are suggested for increasing response speed and for eliminating leakage resistance and current instabilities. Based on the above, two practical circuits, one having a linear response and the other a logarithmic response, were designed and evaluated experimentally. The design of a sweep circuit to implement mobility measurements using atmospheric probes is presented. A triangular voltage waveform is generated and shaped to contain a step in voltage from zero volts in both positive and negative directions.

Geologic fracturing method and resulting fractured geologic structure

DOEpatents

Mace, Jonathan L.; Bradley, Christopher R.; Greening, Doran R.; Steedman, David W.

2016-11-08

Detonation control modules and detonation control circuits are provided herein. A trigger input signal can cause a detonation control module to trigger a detonator. A detonation control module can include a timing circuit, a light-producing diode such as a laser diode, an optically triggered diode, and a high-voltage capacitor. The trigger input signal can activate the timing circuit. The timing circuit can control activation of the light-producing diode. Activation of the light-producing diode illuminates and activates the optically triggered diode. The optically triggered diode can be coupled between the high-voltage capacitor and the detonator. Activation of the optically triggered diode causes a power pulse to be released from the high-voltage capacitor that triggers the detonator.

Reproducible and controllable induction voltage adder for scaled beam experiments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sakai, Yasuo; Nakajima, Mitsuo; Horioka, Kazuhiko

2016-08-15

A reproducible and controllable induction adder was developed using solid-state switching devices and Finemet cores for scaled beam compression experiments. A gate controlled MOSFET circuit was developed for the controllable voltage driver. The MOSFET circuit drove the induction adder at low magnetization levels of the cores which enabled us to form reproducible modulation voltages with jitter less than 0.3 ns. Preliminary beam compression experiments indicated that the induction adder can improve the reproducibility of modulation voltages and advance the beam physics experiments.

Novel zero voltage transition pulse width modulation flyback converter

NASA Astrophysics Data System (ADS)

Adib, Ehsan; Farzanehfard, Hosein

2010-09-01

In this article, a new zero voltage (ZV) transition flyback converter is introduced which uses a simple auxiliary circuit. In this converter, ZV switching condition is achieved for the converter switch while zero current switching condition is attained for the auxiliary switch. There is no additional voltage and current stress on the main switch. Main diode, auxiliary circuit voltage and current ratings are low. The proposed converter is analysed and design procedure is discussed. The presented experimental results of a prototype converter justify the theoretical analysis.

Design techniques for low-voltage analog integrated circuits

NASA Astrophysics Data System (ADS)

Rakús, Matej; Stopjaková, Viera; Arbet, Daniel

2017-08-01

In this paper, a review and analysis of different design techniques for (ultra) low-voltage integrated circuits (IC) are performed. This analysis shows that the most suitable design methods for low-voltage analog IC design in a standard CMOS process include techniques using bulk-driven MOS transistors, dynamic threshold MOS transistors and MOS transistors operating in weak or moderate inversion regions. The main advantage of such techniques is that there is no need for any modification of standard CMOS structure or process. Basic circuit building blocks like differential amplifiers or current mirrors designed using these approaches are able to operate with the power supply voltage of 600 mV (or even lower), which is the key feature towards integrated systems for modern portable applications.

Design and validation of a high-voltage levitation circuit for electrostatic accelerometers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, G.; Wu, S. C.; Zhou, Z. B.

2013-12-15

A simple high-voltage circuit with a voltage range of 0 to 900 V and an open-loop bandwidth of 11 kHz is realized by using an operational amplifier and a MOSFET combination. The circuit is used for the levitation of a test mass of 71 g, suspended below the top-electrodes with a gap distance of 57 μm, so that the performance of an electrostatic accelerometer can be tested on the ground. The translation noise of the accelerometer, limited by seismic noise, is about 4 × 10{sup −8} m/s{sup 2}/Hz{sup 1/2} at 0.1 Hz, while the high-voltage coupling noise is one-order ofmore » magnitude lower.« less

Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell

NASA Technical Reports Server (NTRS)

Ho, C.-T.

1982-01-01

The results of experiments on the recombination lifetime in a phosphorus diffused N(+) layer of a silicon solar cell are reported. The cells studied comprised three groups of Czochralski grown crystals: boron doped to one ohm-cm, boron doped to 6 ohm-cm, and aluminum doped to one ohm-cm, all with a shunt resistance exceeding 500 kilo-ohms. The characteristic bulk diffusion length of a cell sample was determined from the short circuit current response to light at a wavelength of one micron. The recombination rates were obtained by measurement of the open circuit voltage as a function of the photogeneration rate. The recombination rate was found to be dependent on the photoinjection level, and is positive-field controlled at low photoinjection, positive-field influence Auger recombination at a medium photoinjection level, and negative-field controlled Auger recombination at a high photoinjection level.

An efficient current-based logic cell model for crosstalk delay analysis

NASA Astrophysics Data System (ADS)

Nazarian, Shahin; Das, Debasish

2013-04-01

Logic cell modelling is an important component in the analysis and design of CMOS integrated circuits, mostly due to nonlinear behaviour of CMOS cells with respect to the voltage signal at their input and output pins. A current-based model for CMOS logic cells is presented, which can be used for effective crosstalk noise and delta delay analysis in CMOS VLSI circuits. Existing current source models are expensive and need a new set of Spice-based characterisation, which is not compatible with typical EDA tools. In this article we present Imodel, a simple nonlinear logic cell model that can be derived from the typical cell libraries such as NLDM, with accuracy much higher than NLDM-based cell delay models. In fact, our experiments show an average error of 3% compared to Spice. This level of accuracy comes with a maximum runtime penalty of 19% compared to NLDM-based cell delay models on medium-sized industrial designs.

A review of the Thermoelectronic Laser Energy Converter /TELEC/ Program at Lewis Research Center

NASA Technical Reports Server (NTRS)

Alger, D. L.; Manista, E. J.; Thompson, R. W.

1978-01-01

The investigation of the Thermoelectronic Laser Energy Converter (TELEC) concept at the Lewis Research Center (LeRC) began with a feasibility study of a 1 megawatt sized TELEC system. The TELEC was to use either cesium vapor or hydrogen as the plasma medium. The cesium vapor TELEC appears to be the more practical device studied with an overall calculated conversion efficiency of greater than 48%. Following this study, a small TELEC cell was fabricated which demonstrated the conversion of a small amount of laser power to electrical power. The cell developed a short circuit current of 0.7 amperes and an open circuit voltage, as extrapolated from volt-ampere curves, of about 1.5 volts. Work is now in progress to construct and test a cesium vapor TELEC capable of absorbing 20% of an incident 10 kW, 10.6 micrometer beam, and converting 35% of this power to electrical power.

Use of vacuum tubes in test instrumentation for measuring characteristics of fast high-voltage semiconductor devices

NASA Technical Reports Server (NTRS)

Berning, D.

1981-01-01

Circuits are described that permit measurement of fast events occurring in power semiconductors. These circuits were developed for the dynamic characterization of transistors used in inductive-load switching applications. Fast voltage clamping using vacuum diodes is discussed, and reference is made to a unique circuit that was built for performing nondestructive, reverse-bias, second-breakdown tests on transistors.

Development of High Level Electrical Stress Failure Threshold and Prediction Model for Small Scale Junction Integrated Circuits

DTIC Science & Technology

1978-09-01

AWACS EMP Guidelines presents two different models to predict the damage pcwer of the dev-ce and the circuit damage EMP voltage ( VEMP ). Neither of...calculated as K P~ I V BD 6. The damage EMP voltage ( VEMP ) is calculated KZ EMP +IZ =D +BD VBD1F 7. The damage EMP voltage is calculated for collector

Lockheed Martin T-Rex: Preliminary report

DOE Office of Scientific and Technical Information (OSTI.GOV)

NONE

1997-07-31

T-Rex is a robot which may be used in toxic or flammable environments. The assessment of the T-Rex conducted at the Lockheed Martin facility was limited in its scope. The scope of the assessment was directed by the type of equipment being used and the amount of accessibility to the equipment. Due to severe time constraints--the assessment was conducted in one day--human factors interface activities were limited. This should be considered a preliminary assessment. This report covers aspects of the technology that were available to the assessment team. Recommendations for future evaluation of this technology are also included. The contentsmore » are as follows: Electrical Considerations; General Electrical Consideration; Trailing Cables; Grounding; Surface High Voltage Distribution; Low and Medium Voltage Alternating Current Circuits; Potential for Harmful Human Factor Incidents and Enterprise Disablement; Exclusion Zone Emergency Maintenance; and Recommendations.« less

Molecular electronics in pinnae of Mimosa pudica

PubMed Central

Foster, Justin C; Markin, Vladislav S

2010-01-01

Bioelectrochemical circuits operate in all plants including the sensitive plant Mimosa pudica Linn. The activation of biologically closed circuits with voltage gated ion channels can lead to various mechanical, hydrodynamical, physiological, biochemical and biophysical responses. Here the biologically closed electrochemical circuit in pinnae of Mimosa pudica is analyzed using the charged capacitor method for electrostimulation at different voltages. Also the equivalent electrical scheme of electrical signal transduction inside the plant's pinna is evaluated. These circuits remain linear at small potentials not exceeding 0.5 V. At higher potentials the circuits become strongly non-linear pointing to the opening of ion channels in plant tissues. Changing the polarity of electrodes leads to a strong rectification effect and to different kinetics of a capacitor. These effects can be caused by a redistribution of K+, Cl−, Ca2+ and H+ ions through voltage gated ion channels. The electrical properties of Mimosa pudica were investigated and equivalent electrical circuits within the pinnae were proposed to explain the experimental data. PMID:20448476

Molecular electronics in pinnae of Mimosa pudica.

PubMed

Volkov, Alexander G; Foster, Justin C; Markin, Vladislav S

2010-07-01

Bioelectrochemical circuits operate in all plants including the sensitive plant Mimosa pudica Linn. The activation of biologically closed circuits with voltage gated ion channels can lead to various mechanical, hydrodynamical, physiological, biochemical, and biophysical responses. Here the biologically closed electrochemical circuit in pinnae of Mimosa pudica is analyzed using the charged capacitor method for electrostimulation at different voltages. Also the equivalent electrical scheme of electrical signal transduction inside the plant's pinna is evaluated. These circuits remain linear at small potentials not exceeding 0.5 V. At higher potentials the circuits become strongly non-linear pointing to the opening of ion channels in plant tissues. Changing the polarity of electrodes leads to a strong rectification effect and to different kinetics of a capacitor. These effects can be caused by a redistribution of K(+), Cl(-), Ca(2+), and H(+) ions through voltage gated ion channels. The electrical properties of Mimosa pudica were investigated and equivalent electrical circuits within the pinnae were proposed to explain the experimental data.

Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications.

PubMed

Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

2016-05-09

Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm(2) V(-1) sec(-1), and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity.

Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications

PubMed Central

Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

2016-01-01

Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm2 V−1 sec−1, and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity. PMID:27157914

DC attenuation meter

DOEpatents

Hargrove, Douglas L.

2004-09-14

A portable, hand-held meter used to measure direct current (DC) attenuation in low impedance electrical signal cables and signal attenuators. A DC voltage is applied to the signal input of the cable and feedback to the control circuit through the signal cable and attenuators. The control circuit adjusts the applied voltage to the cable until the feedback voltage equals the reference voltage. The "units" of applied voltage required at the cable input is the system attenuation value of the cable and attenuators, which makes this meter unique. The meter may be used to calibrate data signal cables, attenuators, and cable-attenuator assemblies.

Effects of Temperature and Supply Voltage on SEU- and SET-Induced Errors in Bulk 40-nm Sequential Circuits

NASA Astrophysics Data System (ADS)

Chen, R. M.; Diggins, Z. J.; Mahatme, N. N.; Wang, L.; Zhang, E. X.; Chen, Y. P.; Zhang, H.; Liu, Y. N.; Narasimham, B.; Witulski, A. F.; Bhuva, B. L.; Fleetwood, D. M.

2017-08-01

The single-event sensitivity of bulk 40-nm sequential circuits is investigated as a function of temperature and supply voltage. An overall increase in SEU cross section versus temperature is observed at relatively high supply voltages. However, at low supply voltages, there is a threshold temperature beyond which the SEU cross section decreases with further increases in temperature. Single-event transient induced errors in flip-flops also increase versus temperature at relatively high supply voltages and are more sensitive to temperature variation than those caused by single-event upsets.

The realization of an SVGA OLED-on-silicon microdisplay driving circuit

NASA Astrophysics Data System (ADS)

Bohua, Zhao; Ran, Huang; Fei, Ma; Guohua, Xie; Zhensong, Zhang; Huan, Du; Jiajun, Luo; Yi, Zhao

2012-03-01

An 800 × 600 pixel organic light-emitting diode-on-silicon (OLEDoS) driving circuit is proposed. The pixel cell circuit utilizes a subthreshold-voltage-scaling structure which can modulate the pixel current between 170 pA and 11.4 nA. In order to keep the voltage of the column bus at a relatively high level, the sample-and-hold circuits adopt a ping-pong operation. The driving circuit is fabricated in a commercially available 0.35 μm two-poly four-metal 3.3 V mixed-signal CMOS process. The pixel cell area is 15 × 15 μm2 and the total chip occupies 15.5 × 12.3 mm2. Experimental results show that the chip can work properly at a frame frequency of 60 Hz and has a 64 grayscale (monochrome) display. The total power consumption of the chip is about 85 mW with a 3.3V supply voltage.

Optimization of Passive Voltage Multipliers for Fast Start-up and Multi-voltage Power Supplies in Electromagnetic Energy Harvesting Systems

NASA Astrophysics Data System (ADS)

Yang, G.; Stark, B. H.; Burrow, S. G.; Hollis, S. J.

2014-11-01

This paper demonstrates the use of passive voltage multipliers for rapid start-up of sub-milliwatt electromagnetic energy harvesting systems. The work describes circuit optimization to make as short as possible the transition from completely depleted energy storage to the first powering-up of an actively controlled switched-mode converter. The dependency of the start-up time on component parameters and topologies is derived by simulation and experimentation. The resulting optimized multiplier design reduces the start-up time from several minutes to 1 second. An additional improvement uses the inherent cascade structure of the voltage multiplier to power sub-systems at different voltages. This multi-rail start-up is shown to reduce the circuit losses of the active converter by 72% with respect to the optimized single-rail system. The experimental results provide insight into the multiplier's transient behaviour, including circuit interactions, in a complete harvesting system, and offer important information to optimize voltage multipliers for rapid start-up.

A precision isotonic measuring system for isolated tissues.

PubMed

Mellor, P M

1984-12-01

An isotonic measuring system is described which utilizes an angular position transducer of the linear differential voltage transformer type. Resistance to corrosion, protection against the ingress of solutions, and ease of mounting and setting up were the mechanical objectives. Accuracy, linearity, and freedom from drift were essential requirements of the electrical specification. A special housing was designed to accommodate the transducer to overcome these problems. A control unit incorporating a power supply and electronic filtering components was made to serve up to four such transducers. The transducer output voltage is sufficiently high to drive directly even low sensitivity chart recorders. Constructional details and a circuit diagram are included. Fifty such transducers have been in use for up to four years in these laboratories. Examples of some of the published work done using this transducer system are referenced.

A high voltage pulse generator based on silicon-controlled rectifier for field-reversed configuration experiment.

PubMed

Lin, Munan; Liu, Ming; Zhu, Guanghui; Wang, Yanpeng; Shi, Peiyun; Sun, Xuan

2017-08-01

A high voltage pulse generator based on a silicon-controlled rectifier has been designed and implemented for a field reversed configuration experiment. A critical damping circuit is used in the generator to produce the desired pulse waveform. Depending on the load, the rise time of the output trigger signal can be less than 1 μs, and the peak amplitudes of trigger voltage and current are up to 8 kV and 85 A in a single output. The output voltage can be easily adjusted by changing the voltage on a capacitor of the generator. In addition, the generator integrates an electrically floating heater circuit so it is capable of triggering either pseudosparks (TDI-type hydrogen thyratron) or ignitrons. Details of the circuits and their implementation are described in the paper. The trigger generator has successfully controlled the discharging sequence of the pulsed power supply for a field reversed configuration experiment.

A high voltage pulse generator based on silicon-controlled rectifier for field-reversed configuration experiment

NASA Astrophysics Data System (ADS)

Lin, Munan; Liu, Ming; Zhu, Guanghui; Wang, Yanpeng; Shi, Peiyun; Sun, Xuan

2017-08-01

A high voltage pulse generator based on a silicon-controlled rectifier has been designed and implemented for a field reversed configuration experiment. A critical damping circuit is used in the generator to produce the desired pulse waveform. Depending on the load, the rise time of the output trigger signal can be less than 1 μs, and the peak amplitudes of trigger voltage and current are up to 8 kV and 85 A in a single output. The output voltage can be easily adjusted by changing the voltage on a capacitor of the generator. In addition, the generator integrates an electrically floating heater circuit so it is capable of triggering either pseudosparks (TDI-type hydrogen thyratron) or ignitrons. Details of the circuits and their implementation are described in the paper. The trigger generator has successfully controlled the discharging sequence of the pulsed power supply for a field reversed configuration experiment.

Auxiliary quasi-resonant dc tank electrical power converter

DOEpatents

Peng, Fang Z.

2006-10-24

An auxiliary quasi-resonant dc tank (AQRDCT) power converter with fast current charging, voltage balancing (or charging), and voltage clamping circuits is provided for achieving soft-switched power conversion. The present invention is an improvement of the invention taught in U.S. Pat. No. 6,111,770, herein incorporated by reference. The present invention provides faster current charging to the resonant inductor, thus minimizing delay time of the pulse width modulation (PWM) due to the soft-switching process. The new AQRDCT converter includes three tank capacitors or power supplies to achieve the faster current charging and minimize the soft-switching time delay. The new AQRDCT converter further includes a voltage balancing circuit to charge and discharge the three tank capacitors so that additional isolated power supplies from the utility line are not needed. A voltage clamping circuit is also included for clamping voltage surge due to the reverse recovery of diodes.

Ultrasound transducer modeling-received voltage signals and the use of half-wavelength window layers with acoustic coupling layers.

PubMed

Willatzen, M

1999-01-01

A general set of modeling equations for lossless one-dimensional multilayer ultrasound transducers is presented based on first principles. In particular, a direct relationship between ultrasound transducer results and the underlying physical principles of electroacoustics is given. As such, the model may provide better physical understanding for designers not fully versed in electrical circuits theory or in linear system analyses. The model is suitable for time-domain analysis and monofrequency design. Special attention is given to the determination of the time-dependent voltage across the receiver electrodes subject to a general voltage input, but information on any (dynamic) variable of interest is provided. The basic equations governing the dynamics of the multilayer structure acting as transmitter as well as receiver are solved by Fourier analysis and by imposing continuity of velocity and pressure between layers. Sound transmission between the two piezoelectric circuits is assumed to take place in a water bath such that the Rayleigh equation can be used to obtain the incoming pressure at the receiver aperture from the acceleration of the opposing transmitter aperture. Comparison with experimental results is possible by allowing coupling to external electric impedances. A numerical test case using a multilayered 1-MHz transducer for flow meter applications was considered and good agreement with experiments was obtained in terms of voltage signals. The transducer contains a half-wavelength stainless steel layer needed to resist corrosion, the ability to operate at temperatures in a wide range from 20 to 150 degrees Celsius, resistance to impact from flowing particles in the medium, high pressure or vacuum, and pH values up to 10 in some locations. The influence of epoxy glue and grease acoustic coupling layers-between the piezoceramics and the stainless steel layer-in the range from 1 to 70 mum was examined. It was shown that, for the same layer thickness, epoxy glue is preferred as compared with grease, both in terms of signal shapes and amplitudes. Finally, inclusion of appropriate electric impedances in the transmitter and receiver circuits is found to affect signal pulses strongly.

An equivalent circuit for small atrial trabeculae of frog.

PubMed Central

Jakobsson, E; Barr, L; Connor, J A

1975-01-01

An equivalent electrical circuit has been constructed for small atrial trabecula of frog in a double sucrose gap voltage clamp apparatus. The basic strategy in constructing the circuit was to derive the distribution of membrane capacitance and extracellular resistance from the preparation's response to small voltage displacements near the resting condition, when the membrane conductance is presumably quite low. Then standard Hodgkin-Huxley channels were placed in parallel with the capacitance and the results of voltage clamp experiments were simulated. The results suggest that the membranes of the preparation cannot in fact be clamped near the control voltage nor can the ionic currents be measured directly with reasonable accuracy by axon standards. It may or may not be a realizable goal in the future to define the preparation's electrical behavior well enough to permit the ultimate quantitative description of the membrane's specific ion conductances. The result of this paper suggest that if this goal is achieved using the double sucrose gap voltage clamp, it will be by a detailed quantitative accounting for substantial irreducible errors in voltage control, rather than by experimental achievement of good voltage control. PMID:1203441

An inherent curvature-compensated voltage reference using non-linearity of gate coupling coefficient

NASA Astrophysics Data System (ADS)

Hande, Vinayak; Shojaei Baghini, Maryam

2015-08-01

A novel current-mode voltage reference circuit which is capable of generating sub-1 V output voltage is presented. The proposed architecture exhibits the inherent curvature compensation ability. The curvature compensation is achieved by utilizing the non-linear behavior of gate coupling coefficient to compensate non-linear temperature dependence of base-emitter voltage. We have also utilized the developments in CMOS process to reduce power and area consumption. The proposed voltage reference is analyzed theoretically and compared with other existing methods. The circuit is designed and simulated in 180 nm mixed-mode CMOS UMC technology which gives a reference level of 246 mV. The minimum required supply voltage is 1 V with maximum current drawn of 9.24 μA. A temperature coefficient of 9 ppm/°C is achieved over -25 to 125 °C temperature range. The reference voltage varies by ±11 mV across process corners. The reference circuit shows the line sensitivity of 0.9 mV/V with area consumption of 100 × 110 μm2

Method for exciting inductive-resistive loads with high and controllable direct current

DOEpatents

Hill, Jr., Homer M.

1976-01-01

Apparatus and method for transmitting dc power to a load circuit by applying a dc voltage from a standard waveform synthesizer to duration modulate a bipolar rectangular wave generator. As the amplitude of the dc voltage increases, the widths of the rectangular wave generator output pulses increase, and as the amplitude of the dc voltage decreases, the widths of the rectangular wave generator output pulses decrease. Thus, the waveform synthesizer selectively changes the durations of the rectangular wave generator bipolar output pulses so as to produce a rectangular wave ac carrier that is duration modulated in accordance with and in direct proportion to the voltage amplitude from the synthesizer. Thereupon, by transferring the carrier to the load circuit through an amplifier and a rectifier, the load current also corresponds directly to the voltage amplitude from the synthesizer. To this end, the rectified wave at less than 100% duty factor, amounts to a doubled frequency direct voltage pulse train for applying a direct current to the load, while the current ripple is minimized by a high L/R in the load circuit. In one embodiment, a power transmitting power amplifier means having a dc power supply is matched to the load circuit through a transformer for current magnification without sacrificing load current duration capability, while negative voltage and current feedback are provided in order to insure good output fidelity.

Amphotericin B channels in phospholipid membrane-coated nanoporous silicon surfaces: implications for photovoltaic driving of ions across membranes.

PubMed

Yilma, Solomon; Liu, Nangou; Samoylov, Alexander; Lo, Ting; Brinker, C Jeffrey; Vodyanoy, Vitaly

2007-03-15

The antimycotic agent amphotericin B (AmB) functions by forming complexes with sterols to form ion channels that cause membrane leakage. When AmB and cholesterol mixed at 2:1 ratio were incorporated into phospholipid bilayer membranes formed on the tip of patch pipettes, ion channel current fluctuations with characteristic open and closed states were observed. These channels were also functional in phospholipid membranes formed on nanoporous silicon surfaces. Electrophysiological studies of AmB-cholesterol mixtures that were incorporated into phospholipid membranes formed on the surface of nanoporous (6.5 nm pore diameter) silicon plates revealed large conductance ion channels ( approximately 300 pS) with distinct open and closed states. Currents through the AmB-cholesterol channels on nanoporous silicon surfaces can be driven by voltage applied via conventional electrical circuits or by photovoltaic electrical potential entirely generated when the nanoporous silicon surface is illuminated with a narrow laser beam. Electrical recordings made during laser illumination of AmB-cholesterol containing membrane-coated nanoporous silicon surfaces revealed very large conductance ion channels with distinct open and closed states. Our findings indicate that nanoporous silicon surfaces can serve as mediums for ion-channel-based biosensors. The photovoltaic properties of nanoporous silicon surfaces show great promise for making such biosensors addressable via optical technologies.

Simulation Analysis of DC and Switching Impulse Superposition Circuit

NASA Astrophysics Data System (ADS)

Zhang, Chenmeng; Xie, Shijun; Zhang, Yu; Mao, Yuxiang

2018-03-01

Surge capacitors running between the natural bus and the ground are affected by DC and impulse superposition voltage during operation in the converter station. This paper analyses the simulation aging circuit of surge capacitors by PSCAD electromagnetic transient simulation software. This paper also analyses the effect of the DC voltage to the waveform of the impulse voltage generation. The effect of coupling capacitor to the test voltage waveform is also studied. Testing results prove that the DC voltage has little effect on the waveform of the output of the surge voltage generator, and the value of the coupling capacitor has little effect on the voltage waveform of the sample. Simulation results show that surge capacitor DC and impulse superimposed aging test is feasible.

Power conversion apparatus and method

DOEpatents

Su, Gui-Jia [Knoxville, TN

2012-02-07

A power conversion apparatus includes an interfacing circuit that enables a current source inverter to operate from a voltage energy storage device (voltage source), such as a battery, ultracapacitor or fuel cell. The interfacing circuit, also referred to as a voltage-to-current converter, transforms the voltage source into a current source that feeds a DC current to a current source inverter. The voltage-to-current converter also provides means for controlling and maintaining a constant DC bus current that supplies the current source inverter. The voltage-to-current converter also enables the current source inverter to charge the voltage energy storage device, such as during dynamic braking of a hybrid electric vehicle, without the need of reversing the direction of the DC bus current.

Monolithic 3D CMOS Using Layered Semiconductors.

PubMed

Sachid, Angada B; Tosun, Mahmut; Desai, Sujay B; Hsu, Ching-Yi; Lien, Der-Hsien; Madhvapathy, Surabhi R; Chen, Yu-Ze; Hettick, Mark; Kang, Jeong Seuk; Zeng, Yuping; He, Jr-Hau; Chang, Edward Yi; Chueh, Yu-Lun; Javey, Ali; Hu, Chenming

2016-04-06

Monolithic 3D integrated circuits using transition metal dichalcogenide materials and low-temperature processing are reported. A variety of digital and analog circuits are implemented on two sequentially integrated layers of devices. Inverter circuit operation at an ultralow supply voltage of 150 mV is achieved, paving the way to high-density, ultralow-voltage, and ultralow-power applications. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Method and apparatus for current-output peak detection

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Geronimo, Gianluigi

2017-01-24

A method and apparatus for a current-output peak detector. A current-output peak detector circuit is disclosed and works in two phases. The peak detector circuit includes switches to switch the peak detector circuit from the first phase to the second phase upon detection of the peak voltage of an input voltage signal. The peak detector generates a current output with a high degree of accuracy in the second phase.

Design and implementation of a RF powering circuit for RFID tags or other batteryless embedded devices.

PubMed

Liu, Dongsheng; Wang, Rencai; Yao, Ke; Zou, Xuecheng; Guo, Liang

2014-08-13

A RF powering circuit used in radio-frequency identification (RFID) tags and other batteryless embedded devices is presented in this paper. The RF powering circuit harvests energy from electromagnetic waves and converts the RF energy to a stable voltage source. Analysis of a NMOS gate-cross connected bridge rectifier is conducted to demonstrate relationship between device sizes and power conversion efficiency (PCE) of the rectifier. A rectifier with 38.54% PCE under normal working conditions is designed. Moreover, a stable voltage regulator with a temperature and voltage optimizing strategy including adoption of a combination resistor is developed, which is able to accommodate a large input range of 4 V to 12 V and be immune to temperature variations. Latch-up prevention and noise isolation methods in layout design are also presented. Designed with the HJTC 0.25 μm process, this regulator achieves 0.04 mV/°C temperature rejection ratio (TRR) and 2.5 mV/V voltage rejection ratio (VRR). The RF powering circuit is also fabricated in the HJTC 0.25 μm process. The area of the RF powering circuit is 0.23 × 0.24 mm². The RF powering circuit is successfully integrated with ISO/IEC 15693-compatible and ISO/IEC 14443-compatible RFID tag chips.

Design and Implementation of a RF Powering Circuit for RFID Tags or Other Batteryless Embedded Devices

PubMed Central

Liu, Dongsheng; Wang, Rencai; Yao, Ke; Zou, Xuecheng; Guo, Liang

2014-01-01

A RF powering circuit used in radio-frequency identification (RFID) tags and other batteryless embedded devices is presented in this paper. The RF powering circuit harvests energy from electromagnetic waves and converts the RF energy to a stable voltage source. Analysis of a NMOS gate-cross connected bridge rectifier is conducted to demonstrate relationship between device sizes and power conversion efficiency (PCE) of the rectifier. A rectifier with 38.54% PCE under normal working conditions is designed. Moreover, a stable voltage regulator with a temperature and voltage optimizing strategy including adoption of a combination resistor is developed, which is able to accommodate a large input range of 4 V to 12 V and be immune to temperature variations. Latch-up prevention and noise isolation methods in layout design are also presented. Designed with the HJTC 0.25 μm process, this regulator achieves 0.04 mV/°C temperature rejection ratio (TRR) and 2.5 mV/V voltage rejection ratio (VRR). The RF powering circuit is also fabricated in the HJTC 0.25 μm process. The area of the RF powering circuit is 0.23 × 0.24 mm2. The RF powering circuit is successfully integrated with ISO/IEC 15693-compatible and ISO/IEC 14443-compatible RFID tag chips. PMID:25123466

A High-Temperature Piezoresistive Pressure Sensor with an Integrated Signal-Conditioning Circuit.

PubMed

Yao, Zong; Liang, Ting; Jia, Pinggang; Hong, Yingping; Qi, Lei; Lei, Cheng; Zhang, Bin; Xiong, Jijun

2016-06-18

This paper focuses on the design and fabrication of a high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit, which consists of an encapsulated pressure-sensitive chip, a temperature compensation circuit and a signal-conditioning circuit. A silicon on insulation (SOI) material and a standard MEMS process are used in the pressure-sensitive chip fabrication, and high-temperature electronic components are adopted in the temperature-compensation and signal-conditioning circuits. The entire pressure sensor achieves a hermetic seal and can be operated long-term in the range of -50 °C to 220 °C. Unlike traditional pressure sensor output voltage ranges (in the dozens to hundreds of millivolts), the output voltage of this sensor is from 0 V to 5 V, which can significantly improve the signal-to-noise ratio and measurement accuracy in practical applications of long-term transmission based on experimental verification. Furthermore, because this flexible sensor's output voltage is adjustable, general follow-up pressure transmitter devices for voltage converters need not be used, which greatly reduces the cost of the test system. Thus, the proposed high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit is expected to be highly applicable to pressure measurements in harsh environments.

A High-Temperature Piezoresistive Pressure Sensor with an Integrated Signal-Conditioning Circuit

PubMed Central

Yao, Zong; Liang, Ting; Jia, Pinggang; Hong, Yingping; Qi, Lei; Lei, Cheng; Zhang, Bin; Xiong, Jijun

2016-01-01

This paper focuses on the design and fabrication of a high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit, which consists of an encapsulated pressure-sensitive chip, a temperature compensation circuit and a signal-conditioning circuit. A silicon on insulation (SOI) material and a standard MEMS process are used in the pressure-sensitive chip fabrication, and high-temperature electronic components are adopted in the temperature-compensation and signal-conditioning circuits. The entire pressure sensor achieves a hermetic seal and can be operated long-term in the range of −50 °C to 220 °C. Unlike traditional pressure sensor output voltage ranges (in the dozens to hundreds of millivolts), the output voltage of this sensor is from 0 V to 5 V, which can significantly improve the signal-to-noise ratio and measurement accuracy in practical applications of long-term transmission based on experimental verification. Furthermore, because this flexible sensor’s output voltage is adjustable, general follow-up pressure transmitter devices for voltage converters need not be used, which greatly reduces the cost of the test system. Thus, the proposed high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit is expected to be highly applicable to pressure measurements in harsh environments. PMID:27322288

Improved High/Low Junction Silicon Solar Cell

NASA Technical Reports Server (NTRS)

Neugroschel, A.; Pao, S. C.; Lindholm, F. A.; Fossum, J. G.

1986-01-01

Method developed to raise value of open-circuit voltage in silicon solar cells by incorporating high/low junction in cell emitter. Power-conversion efficiency of low-resistivity silicon solar cell considerably less than maximum theoretical value mainly because open-circuit voltage is smaller than simple p/n junction theory predicts. With this method, air-mass-zero opencircuit voltage increased from 600 mV level to approximately 650 mV.

A high-efficiency self-powered wireless sensor node for monitoring concerning vibratory events

NASA Astrophysics Data System (ADS)

Xu, Dacheng; Li, Suiqiong; Li, Mengyang; Xie, Danpeng; Dong, Chuan; Li, Xinxin

2017-09-01

This paper presents a self-powered wireless alarming sensor node (SWASN), which was designed to monitor the occurrence of concerning vibratory events. The major components of the sensor node include a vibration-threshold-triggered energy harvester (VTTEH) that powers the sensor node, a dual threshold voltage control circuit (DTVCC) for power management and a radio frequency (RF) signal transmitting module. The VTTEH generates significant electric energy only when the input vibration reaches certain amplitude. Thus, the VTTEH serves as both the power source and the vibration-event-sensing element for the sensor node. The DTVCC was specifically designed to utilize the limited power supply from the VTTEH to operate the sensor node. Constructed with only voltage detectors and MOSFETs, the DTVCC achieved low power consumption, which was 65% lower compared with the power management circuit designed in our previous work. Meanwhile, a RF transmit circuit was constructed based on the commercially available CC1110-F32 wireless transceiver chip and a compact planar antenna was designed to improve the signal transmission distance. The sensor node was fabricated and was characterized both in the laboratory and in the field. Experimental results showed that the SWASN could automatically send out alarming signals when the simulated concerning event occurred. The waiting time between two consecutive transmission periods is less than 125 s and the transmission distance can reach 1.31 km. The SWASN will have broad applications in field surveillances.

Driver Circuit For High-Power MOSFET's

NASA Technical Reports Server (NTRS)

Letzer, Kevin A.

1991-01-01

Driver circuit generates rapid-voltage-transition pulses needed to switch high-power metal oxide/semiconductor field-effect transistor (MOSFET) modules rapidly between full "on" and full "off". Rapid switching reduces time of overlap between appreciable current through and appreciable voltage across such modules, thereby increasing power efficiency.

Voltage versus Current, or the Problem of the Chicken and the Egg

ERIC Educational Resources Information Center

Silva, Antonio Alberto; Soares, Rolando

2007-01-01

In an electric circuit, is it the current that causes the voltage, or the inverse? This is a false dilemma, as shown by an introductory and qualitative approach to a circuit as a system. (Contains 9 figures and 7 footnotes.)

Inverter for Interchangeable Use as Current Source Inverter and Voltage Source Inverter for Interconnecting to Grid

NASA Astrophysics Data System (ADS)

Teruya, Daisuke; Masukawa, Shigeo; Iida, Shoji

We propose a novel inverter that can be operated either as a Current Source Inverter (CSI) or as a Voltage Source Inverter (VSI) by changing only the control signals. It is proper to apply it to the interconnecting system with renewal energy, such as photovoltaic cells or wind generation systems, to a grid. This inverter is usually operated as the CSI connected to the grid. Even if the energy source has a lower voltage than the grid, the energy can be supplied to the grid through the proposed inverter. The power factor can be briefly maintained at almost unity. When power supply from the grid is interrupted, the proposed circuit should be operated as the VSI in the stand-alone operation mode. In this way, the circuit can maintain a constant output voltage to the loads. In this paper, the proposed circuit configuration and the control schemes for both the CSI and the VSI are described. Further, the circuit characteristics for both are discussed experimentally.

A high open-circuit voltage gallium nitride betavoltaic microbattery

NASA Astrophysics Data System (ADS)

Cheng, Zaijun; Chen, Xuyuan; San, Haisheng; Feng, Zhihong; Liu, Bo

2012-07-01

A high open-circuit voltage betavoltaic microbattery based on a gallium nitride (GaN) p-i-n homojunction is demonstrated. As a beta-absorbing layer, the low electron concentration of the n-type GaN layer is achieved by the process of Fe compensation doping. Under the irradiation of a planar solid 63Ni source with activity of 0.5 mCi, the open-circuit voltage of the fabricated microbattery with 2 × 2 mm2 area reaches as much as 1.64 V, which is the record value reported for betavoltaic batteries with 63Ni source, the short-circuit current was measured as 568 pA and the conversion effective of 0.98% was obtained. The experimental results suggest that GaN is a high-potential candidate for developing the betavoltaic microbattery.

ELECTRONIC TRIGGER CIRCUIT

DOEpatents

Russell, J.A.G.

1958-01-01

An electronic trigger circuit is described of the type where an output pulse is obtained only after an input voltage has cqualed or exceeded a selected reference voltage. In general, the invention comprises a source of direct current reference voltage in series with an impedance and a diode rectifying element. An input pulse of preselected amplitude causes the diode to conduct and develop a signal across the impedance. The signal is delivered to an amplifier where an output pulse is produced and part of the output is fed back in a positive manner to the diode so that the amplifier produces a steep wave front trigger pulsc at the output. The trigger point of the described circuit is not subject to variation due to the aging, etc., of multi-electrode tabes, since the diode circuit essentially determines the trigger point.

Comparison of in-situ delay monitors for use in Adaptive Voltage Scaling

NASA Astrophysics Data System (ADS)

Pour Aryan, N.; Heiß, L.; Schmitt-Landsiedel, D.; Georgakos, G.; Wirnshofer, M.

2012-09-01

In Adaptive Voltage Scaling (AVS) the supply voltage of digital circuits is tuned according to the circuit's actual operating condition, which enables dynamic compensation to PVTA variations. By exploiting the excessive safety margins added in state-of-the-art worst-case designs considerable power saving is achieved. In our approach, the operating condition of the circuit is monitored by in-situ delay monitors. This paper presents different designs to implement the in-situ delay monitors capable of detecting late but still non-erroneous transitions, called Pre-Errors. The developed Pre-Error monitors are integrated in a 16 bit multiplier test circuit and the resulting Pre-Error AVS system is modeled by a Markov chain in order to determine the power saving potential of each Pre-Error detection approach.

High-voltage solar-cell chip

NASA Technical Reports Server (NTRS)

Kapoor, V. J.; Valco, G. J.; Skebe, G. G.; Evans, J. C., Jr.

1985-01-01

Integrated circuit technology has been successfully applied to the design and fabrication of 0.5 x 0.5-cm planar multijunction solar-cell chips. Each of these solar cells consisted of six voltage-generating unit cells monolithically connected in series and fabricated on a 75-micron-thick, p-type, single crystal, silicon substrate. A contact photolithic process employing five photomask levels together with a standard microelectronics batch-processing technique were used to construct the solar-cell chip. The open-circuit voltage increased rapidly with increasing illumination up to 5 AM1 suns where it began to saturate at the sum of the individual unit-cell voltages at a maximum of 3.0 V. A short-circuit current density per unit cell of 240 mA/sq cm was observed at 10 AM1 suns.

Magnetic dipole discharges. II. Cathode and anode spot discharges and probe diagnostics

NASA Astrophysics Data System (ADS)

Stenzel, R. L.; Urrutia, J. M.; Ionita, C.; Schrittwieser, R.

2013-08-01

The high current regime of a magnetron-type discharge has been investigated. The discharge uses a permanent magnet as a cold cathode which emits secondary electrons while the chamber wall or a grounded electrode serves as the anode. As the discharge voltage is increased, the magnet develops cathode spots, which are short duration arcs that provide copious electrons to increase the discharge current dramatically. Short (1 μs), high current (200 A) and high voltage (750 V) discharge pulses are produced in a relaxation instability between the plasma and a charging capacitor. Spots are also observed on a negatively biased plane Langmuir probe. The probe current pulses are as large as those on the magnet, implying that the high discharge current does not depend on the cathode surface area but on the properties of the spots. The fast current pulses produce large inductive voltages, which can reverse the electrical polarity of the magnet and temporarily operate it as an anode. The discharge current may also oscillate at the frequency determined by the charging capacitor and the discharge circuit inductance. Each half cycle of high-current current pulses exhibits a fast (≃10 ns) current rise when a spot is formed. It induces high frequency (10-100 MHz) transients and ringing oscillations in probes and current circuits. Most probes behave like unmatched antennas for the electromagnetic pulses of spot discharges. Examples are shown to distinguish the source of oscillations and some rf characteristics of Langmuir probes.

2D Electrides as Promising Anode Materials for Na-Ion Batteries from First-Principles Study.

PubMed

Hu, Junping; Xu, Bo; Yang, Shengyuan A; Guan, Shan; Ouyang, Chuying; Yao, Yugui

2015-11-04

Searching for suitable anodes with good performance is a key challenge for rechargeable Na-ion batteries (NIBs). Using the first-principles method, we predict that 2D nitrogen electride materials can be served as anode materials for NIBs. Particularly, we show that Ca2N meets almost all the requirements of a good NIB anode. Each formula unit of a monolayer Ca2N sheet can absorb up to four Na atoms, corresponding to a theoretical specific capacity of 1138 mAh·g(-1). The metallic character for both pristine Ca2N and its Na intercalated state NaxCa2N ensures good electronic conduction. Na diffusion along the 2D monolayer plane can be very fast even at room temperature, with a Na migration energy barrier as small as 0.084 eV. These properties are key to the excellent rate performance of an anode material. The average open-circuit voltage is calculated to be 0.18 V vs Na/Na(+) for the chemical stoichiometry of Na2Ca2N and 0.09 V for Na4Ca2N. The relatively low average open-circuit voltage is beneficial to the overall voltage of the cell. In addition, the 2D monolayers have very small lattice change upon Na intercalation, which ensures a good cycling stability. All these results demonstrate that the Ca2N monolayer could be an excellent anode material for NIBs.

Overload protection circuit for output driver

DOEpatents

Stewart, Roger G.

1982-05-11

A protection circuit for preventing excessive power dissipation in an output transistor whose conduction path is connected between a power terminal and an output terminal. The protection circuit includes means for sensing the application of a turn on signal to the output transistor and the voltage at the output terminal. When the turn on signal is maintained for a period of time greater than a given period without the voltage at the output terminal reaching a predetermined value, the protection circuit decreases the turn on signal to, and the current conduction through, the output transistor.

Simple Cell Balance Circuit

NASA Technical Reports Server (NTRS)

Johnson, Steven D.; Byers, Jerry W.; Martin, James A.

2012-01-01

A method has been developed for continuous cell voltage balancing for rechargeable batteries (e.g. lithium ion batteries). A resistor divider chain is provided that generates a set of voltages representing the ideal cell voltage (the voltage of each cell should be as if the cells were perfectly balanced). An operational amplifier circuit with an added current buffer stage generates the ideal voltage with a very high degree of accuracy, using the concept of negative feedback. The ideal voltages are each connected to the corresponding cell through a current- limiting resistance. Over time, having the cell connected to the ideal voltage provides a balancing current that moves the cell voltage very close to that ideal level. In effect, it adjusts the current of each cell during charging, discharging, and standby periods to force the cell voltages to be equal to the ideal voltages generated by the resistor divider. The device also includes solid-state switches that disconnect the circuit from the battery so that it will not discharge the battery during storage. This solution requires relatively few parts and is, therefore, of lower cost and of increased reliability due to the fewer failure modes. Additionally, this design uses very little power. A preliminary model predicts a power usage of 0.18 W for an 8-cell battery. This approach is applicable to a wide range of battery capacities and voltages.

Methods for improving solar cell open circuit voltage

DOEpatents

Jordan, John F.; Singh, Vijay P.

1979-01-01

A method for producing a solar cell having an increased open circuit voltage. A layer of cadmium sulfide (CdS) produced by a chemical spray technique and having residual chlorides is exposed to a flow of hydrogen sulfide (H.sub.2 S) heated to a temperature of 400.degree.-600.degree. C. The residual chlorides are reduced and any remaining CdCl.sub.2 is converted to CdS. A heterojunction is formed over the CdS and electrodes are formed. Application of chromium as the positive electrode results in a further increase in the open circuit voltage available from the H.sub.2 S-treated solar cell.

Application of the superposition principle to solar-cell analysis

NASA Technical Reports Server (NTRS)

Lindholm, F. A.; Fossum, J. G.; Burgess, E. L.

1979-01-01

The superposition principle of differential-equation theory - which applies if and only if the relevant boundary-value problems are linear - is used to derive the widely used shifting approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. Analytical methods are presented to treat cases where shifting is not strictly valid. Well-defined conditions necessary for superposition to apply are established. For high injection in the base region, the method of analysis accurately yields the dependence of the open-circuit voltage on the short-circuit current (or the illumination level).

Battery Charge Equalizer with Transformer Array

NASA Technical Reports Server (NTRS)

Davies, Francis

2013-01-01

High-power batteries generally consist of a series connection of many cells or cell banks. In order to maintain high performance over battery life, it is desirable to keep the state of charge of all the cell banks equal. A method provides individual charging for battery cells in a large, high-voltage battery array with a minimum number of transformers while maintaining reasonable efficiency. This is designed to augment a simple highcurrent charger that supplies the main charge energy. The innovation will form part of a larger battery charge system. It consists of a transformer array connected to the battery array through rectification and filtering circuits. The transformer array is connected to a drive circuit and a timing and control circuit that allow individual battery cells or cell banks to be charged. The timing circuit and control circuit connect to a charge controller that uses battery instrumentation to determine which battery bank to charge. It is important to note that the innovation can charge an individual cell bank at the same time that the main battery charger is charging the high-voltage battery. The fact that the battery cell banks are at a non-zero voltage, and that they are all at similar voltages, can be used to allow charging of individual cell banks. A set of transformers can be connected with secondary windings in series to make weighted sums of the voltages on the primaries.

Voltage imaging to understand connections and functions of neuronal circuits.

PubMed

Antic, Srdjan D; Empson, Ruth M; Knöpfel, Thomas

2016-07-01

Understanding of the cellular mechanisms underlying brain functions such as cognition and emotions requires monitoring of membrane voltage at the cellular, circuit, and system levels. Seminal voltage-sensitive dye and calcium-sensitive dye imaging studies have demonstrated parallel detection of electrical activity across populations of interconnected neurons in a variety of preparations. A game-changing advance made in recent years has been the conceptualization and development of optogenetic tools, including genetically encoded indicators of voltage (GEVIs) or calcium (GECIs) and genetically encoded light-gated ion channels (actuators, e.g., channelrhodopsin2). Compared with low-molecular-weight calcium and voltage indicators (dyes), the optogenetic imaging approaches are 1) cell type specific, 2) less invasive, 3) able to relate activity and anatomy, and 4) facilitate long-term recordings of individual cells' activities over weeks, thereby allowing direct monitoring of the emergence of learned behaviors and underlying circuit mechanisms. We highlight the potential of novel approaches based on GEVIs and compare those to calcium imaging approaches. We also discuss how novel approaches based on GEVIs (and GECIs) coupled with genetically encoded actuators will promote progress in our knowledge of brain circuits and systems. Copyright © 2016 the American Physiological Society.

Voltage imaging to understand connections and functions of neuronal circuits

PubMed Central

Antic, Srdjan D.; Empson, Ruth M.

2016-01-01

Understanding of the cellular mechanisms underlying brain functions such as cognition and emotions requires monitoring of membrane voltage at the cellular, circuit, and system levels. Seminal voltage-sensitive dye and calcium-sensitive dye imaging studies have demonstrated parallel detection of electrical activity across populations of interconnected neurons in a variety of preparations. A game-changing advance made in recent years has been the conceptualization and development of optogenetic tools, including genetically encoded indicators of voltage (GEVIs) or calcium (GECIs) and genetically encoded light-gated ion channels (actuators, e.g., channelrhodopsin2). Compared with low-molecular-weight calcium and voltage indicators (dyes), the optogenetic imaging approaches are 1) cell type specific, 2) less invasive, 3) able to relate activity and anatomy, and 4) facilitate long-term recordings of individual cells' activities over weeks, thereby allowing direct monitoring of the emergence of learned behaviors and underlying circuit mechanisms. We highlight the potential of novel approaches based on GEVIs and compare those to calcium imaging approaches. We also discuss how novel approaches based on GEVIs (and GECIs) coupled with genetically encoded actuators will promote progress in our knowledge of brain circuits and systems. PMID:27075539

TRANSISTOR HIGH VOLTAGE POWER SUPPLY

DOEpatents

Driver, G.E.

1958-07-15

High voltage, direct current power supplies are described for use with battery powered nuclear detection equipment. The particular advantages of the power supply described, are increased efficiency and reduced size and welght brought about by the use of transistors in the circuit. An important feature resides tn the employment of a pair of transistors in an alternatefiring oscillator circuit having a coupling transformer and other circuit components which are used for interconnecting the various electrodes of the transistors.

Four-terminal circuit element with photonic core

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sampayan, Stephen

A four-terminal circuit element is described that includes a photonic core inside of the circuit element that uses a wide bandgap semiconductor material that exhibits photoconductivity and allows current flow through the material in response to the light that is incident on the wide bandgap material. The four-terminal circuit element can be configured based on various hardware structures using a single piece or multiple pieces or layers of a wide bandgap semiconductor material to achieve various designed electrical properties such as high switching voltages by using the photoconductive feature beyond the breakdown voltages of semiconductor devices or circuits operated basedmore » on electrical bias or control designs. The photonic core aspect of the four-terminal circuit element provides unique features that enable versatile circuit applications to either replace the semiconductor transistor-based circuit elements or semiconductor diode-based circuit elements.« less

Focal plane infrared readout circuit with automatic background suppression

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Yang, Guang (Inventor); Sun, Chao (Inventor); Shaw, Timothy J. (Inventor); Wrigley, Chris J. (Inventor)

2002-01-01

A circuit for reading out a signal from an infrared detector includes a current-mode background-signal subtracting circuit having a current memory which can be enabled to sample and store a dark level signal from the infrared detector during a calibration phase. The signal stored by the current memory is subtracted from a signal received from the infrared detector during an imaging phase. The circuit also includes a buffered direct injection input circuit and a differential voltage readout section. By performing most of the background signal estimation and subtraction in a current mode, a low gain can be provided by the buffered direct injection input circuit to keep the gain of the background signal relatively small, while a higher gain is provided by the differential voltage readout circuit. An array of such readout circuits can be used in an imager having an array of infrared detectors. The readout circuits can provide a high effective handling capacity.

A multi-dielectric-layered triboelectric nanogenerator as energized by corona discharge.

PubMed

Shao, Jia Jia; Tang, Wei; Jiang, Tao; Chen, Xiang Yu; Xu, Liang; Chen, Bao Dong; Zhou, Tao; Deng, Chao Ran; Wang, Zhong Lin

2017-07-13

Triboelectric nanogenerators (TENGs) have been invented recently for meeting the power requirements of small electronics and potentially solving the worldwide energy crisis. Here, we developed a vertical contact-separation mode TENG based on a novel multi-dielectric-layered (MDL) structure, which was comprised of parylene C, polyimide and SiO 2 films. By using the corona discharge approach, the surface charge density was enhanced to as high as 283 μC m -2 , and especially the open-circuit voltage could be increased by a factor of 55 compared with the original value. Furthermore, the theoretical models were built to reveal the output characteristics and store the electrostatic energy of the TENG. The influences of the structural parameters and operation conditions including the effective dielectric thickness, dielectric constant, gap distance and air breakdown voltage were investigated systematically. It was found that the output performances such as the peak voltage and power density are approximately proportional to the thickness of the MDL film, but they would be restricted by the air breakdown voltage. These unique structures and models could be used to deepen the understanding of the fundamental mechanism of TENGs, and serve as an important guide for designing high performance TENGs.

A high-precision voltage source for EIT

PubMed Central

Saulnier, Gary J; Liu, Ning; Ross, Alexander S

2006-01-01

Electrical impedance tomography (EIT) utilizes electrodes placed on the surface of a body to determine the complex conductivity distribution within the body. EIT can be performed by applying currents through the electrodes and measuring the electrode voltages or by applying electrode voltages and measuring the currents. Techniques have also been developed for applying the desired currents using voltage sources. This paper describes a voltage source for use in applied-voltage EIT that includes the capability of measuring both the applied voltage and applied current. A calibration circuit and calibration algorithm are described which enables all voltage sources in an EIT system to be calibrated to a common standard. The calibration minimizes the impact of stray shunt impedance, passive component variability and active component non-ideality. Simulation data obtained using PSpice are used to demonstrate the effectiveness of the circuits and calibration algorithm. PMID:16636413

Plastic-Sealed Hybrid Power Circuit Package

NASA Technical Reports Server (NTRS)

Miller, W. N.; Gray, O. E.

1983-01-01

Proposed design for hybrid high-voltage power-circuit package uses molded plastic for hermetic sealing instead of glass-to-metal seal. New package used to house high-voltage regulators and solid-state switches for applications in aircraft, electric automobiles, industrial equipment, satellites, solarcell arrays, and other equipment in extreme environments.

Analysis Impact of Distributed Generation Injection to Profile of Voltage and Short-Circuit Fault in 20 kV Distribution Network System

NASA Astrophysics Data System (ADS)

Mulyadi, Y.; Sucita, T.; Rahmawan, M. D.

2018-01-01

This study was a case study in PT. PLN (Ltd.) APJ Bandung area with the subject taken was the installation of distributed generation (DG) on 20-kV distribution channels. The purpose of this study is to find out the effect of DG to the changes in voltage profile and three-phase short circuit fault in the 20-kV distribution system with load conditions considered to be balanced. The reason for this research is to know how far DG can improve the voltage profile of the channel and to what degree DG can increase the three-phase short circuit fault on each bus. The method used in this study was comparing the simulation results of power flow and short-circuit fault using ETAP Power System software with manual calculations. The result obtained from the power current simulation before the installation of DG voltage was the drop at the end of the channel at 2.515%. Meanwhile, the three-phase short-circuit current fault before the DG installation at the beginning of the channel was 13.43 kA. After the installation of DG with injection of 50%, DG power obtained voltage drop at the end of the channel was 1.715% and the current fault at the beginning network was 14.05 kA. In addition, with injection of 90%, DG power obtained voltage drop at the end of the channel was 1.06% and the current fault at the beginning network was 14.13%.

High-speed low-power voltage-programmed driving scheme for AMOLED displays

NASA Astrophysics Data System (ADS)

Xingheng, Xia; Weijing, Wu; Xiaofeng, Song; Guanming, Li; Lei, Zhou; Lirong, Zhang; Miao, Xu; Lei, Wang; Junbiao, Peng

2015-12-01

A new voltage-programmed driving scheme named the mixed parallel addressing scheme is presented for AMOLED displays, in which one compensation interval can be divided into the first compensation frame and the consequent N -1 post-compensation frames without periods of initialization and threshold voltage detection. The proposed driving scheme has the advantages of both high speed and low driving power due to the mixture of the pipeline technology and the threshold voltage one-time detection technology. Corresponding to the proposed driving scheme, we also propose a new voltage-programmed compensation pixel circuit, which consists of five TFTs and two capacitors (5T2C). In-Zn-O thin-film transistors (IZO TFTs) are used to build the proposed 5T2C pixel circuit. It is shown that the non-uniformity of the proposed pixel circuit is considerably reduced compared with that of the conventional 2T1C pixel circuit. The number of frames (N) preserved in the proposed driving scheme are measured and can be up to 35 with the variation of the OLED current remaining in an acceptable range. Moreover, the proposed voltage-programmed driving scheme can be more valuable for an AMOLED display with high resolution, and may also be applied to other compensation pixel circuits. Project supported by the State Key Development Program for Basic Research of China (No. 2015CB655000) the National Natural Science Foundation of China (Nos. 61204089, 61306099, 61036007, 51173049, U1301243), and the Fundamental Research Funds for the Central Universities (Nos. 2013ZZ0046, 2014ZZ0028).

Low-power low-voltage superior-order curvature corrected voltage reference

NASA Astrophysics Data System (ADS)

Popa, Cosmin

2010-06-01

A complementary metal oxide semiconductor (CMOS) voltage reference with a logarithmic curvature-correction will be presented. The first-order compensation is realised using an original offset voltage follower (OVF) block as a proportional to absolute temperature (PTAT) voltage generator, with the advantages of reducing the silicon area and of increasing accuracy by replacing matched resistors with matched transistors. The new logarithmic curvature-correction technique will be implemented using an asymmetric differential amplifier (ADA) block for compensating the logarithmic temperature dependent term from the first-order compensated voltage reference. In order to increase the circuit accuracy, an original temperature-dependent current generator will be designed for computing the exact type of the implemented curvature-correction. The relatively small complexity of the current squarer allows an important increasing of the circuit accuracy that could be achieved by increasing the current generator complexity. As a result of operating most of the MOS transistors in weak inversion, the original proposed voltage reference could be valuable for low-power applications. The circuit is implemented in 0.35 μm CMOS technology and consumes only 60μA for t = 25°C, being supplied at the minimal supply voltage V DD = 1.75V. The temperature coefficient of the reference voltage is 8.7 ppm/°C, while the line sensitivity is 0.75 mV/V for a supply voltage between 1.75 V and 7 V.

Three-phase short circuit calculation method based on pre-computed surface for doubly fed induction generator

NASA Astrophysics Data System (ADS)

Ma, J.; Liu, Q.

2018-02-01

This paper presents an improved short circuit calculation method, based on pre-computed surface to determine the short circuit current of a distribution system with multiple doubly fed induction generators (DFIGs). The short circuit current, injected into power grid by DFIG, is determined by low voltage ride through (LVRT) control and protection under grid fault. However, the existing methods are difficult to calculate the short circuit current of DFIG in engineering practice due to its complexity. A short circuit calculation method, based on pre-computed surface, was proposed by developing the surface of short circuit current changing with the calculating impedance and the open circuit voltage. And the short circuit currents were derived by taking into account the rotor excitation and crowbar activation time. Finally, the pre-computed surfaces of short circuit current at different time were established, and the procedure of DFIG short circuit calculation considering its LVRT was designed. The correctness of proposed method was verified by simulation.

Series circuit of organic thin-film solar cells for conversion of water into hydrogen.

PubMed

Aoki, Atsushi; Naruse, Mitsuru; Abe, Takayuki

2013-07-22

A series circuit of bulk hetero-junction (BHJ) organic thin-film solar cells (OSCs) is investigated for electrolyzing water to gaseous hydrogen and oxygen. The BHJ OSCs applied consist of poly(3-hexylthiophene) as a donor and [6,6]-phenyl C61 butyric acid methyl ester as an acceptor. A series circuit of six such OSC units has an open circuit voltage (V(oc)) of 3.4 V, which is enough to electrolyze water. The short circuit current (J(sc)), fill factor (FF), and energy conversion efficiency (η) are independent of the number of unit cells. A maximum electric power of 8.86 mW cm(-2) is obtained at the voltage of 2.35 V. By combining a water electrolysis cell with the series circuit solar cells, the electrolyzing current and voltage obtained are 1.09 mA and 2.3 V under a simulated solar light irradiation (100 mW cm(-2), AM1.5G), and in one hour 0.65 mL hydrogen is generated. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Design and Testing of a Small Inductive Pulsed Plasma Thruster

NASA Technical Reports Server (NTRS)

Martin, Adam K.; Eskridge, Richard H.; Dominguez, Alexandra; Polzin, Kurt A.; Riley, Daniel P.; Kimberlin, Adam C.

2015-01-01

The design and testing of a small inductive pulsed plasma thruster (IPPT), shown in Fig. 1 with all the major subsystems required for a thruster of this kind are described. Thrust measurements and imaging of the device operated in rep-rated mode are presented to quantify the performance envelope of the device. The small IPPT described in this paper was designed to serve as a test-bed for the pulsed gas-valves and solid-state switches required for a IPPTs. A modular design approach was used to permit future modifications and upgrades. The thruster consists of the following sub-systems: a) a multi-turn, spiral-wound acceleration coil (27 cm o.d., 10 cm i.d.) driven by a 10 microFarad capacitor and switched with a high-voltage thyristor, b) a fast pulsed gas-valve, and c.) a glow-discharge pre-ionizer (PI) circuit. The acceleration-coil circuit may be operated at voltages up to 4 kV (the thyristor limit is 4.5 kV). The device may be operated at rep-rates up to 30 Hz with the present gas-valve. Thrust measurements and imaging of the device operated in rep-rated mode will be presented. The pre-ionizer consists of a 0.3 microFarad capacitor charged to 4 kV and connected to two annular stainless-steel electrodes bounding the area of the coil-face. The 4 kV potential is held across them and when the gas is puffed in over the coil, the PI circuit is completed, and a plasma is formed. Even at the less than optimal base-pressure in the chamber (approximately 5 × 10(exp -4) torr), the PI held-off the applied voltage, and only discharged upon command. For a capacitor charge of 2 kV the peak coil current is 4.1 kA, and during this pulse a very bright discharge (much brighter than from the PI alone) was observed (see Fig. 2). Interestingly, for discharges at this charge voltage the PI was not required as the current rise rate, dI/dt, of the coil itself was sufficient to ionize the gas.

ELECTRONIC PHASE CONTROL CIRCUIT

DOEpatents

Salisbury, J.D.; Klein, W.W.; Hansen, C.F.

1959-04-21

An electronic circuit is described for controlling the phase of radio frequency energy applied to a multicavity linear accelerator. In one application of the circuit two cavities are excited from a single radio frequency source, with one cavity directly coupled to the source and the other cavity coupled through a delay line of special construction. A phase detector provides a bipolar d-c output signal proportional to the difference in phase between the voltage in the two cavities. This d-c signal controls a bias supply which provides a d-c output for varying the capacitnce of voltage sensitive capacitors in the delay line. The over-all operation of the circuit is completely electronic, overcoming the time response limitations of the electromechanical control systems, and the relative phase relationship of the radio frequency voltages in the two caviiies is continuously controlled to effect particle acceleration.

All-optical mapping of barrel cortex circuits based on simultaneous voltage-sensitive dye imaging and channelrhodopsin-mediated photostimulation

PubMed Central

Lo, Shun Qiang; Koh, Dawn X. P.; Sng, Judy C. G.; Augustine, George J.

2015-01-01

Abstract. We describe an experimental approach that uses light to both control and detect neuronal activity in mouse barrel cortex slices: blue light patterned by a digital micromirror array system allowed us to photostimulate specific layers and columns, while a red-shifted voltage-sensitive dye was used to map out large-scale circuit activity. We demonstrate that such all-optical mapping can interrogate various circuits in somatosensory cortex by sequentially activating different layers and columns. Further, mapping in slices from whisker-deprived mice demonstrated that chronic sensory deprivation did not significantly alter feedforward inhibition driven by layer 5 pyramidal neurons. Further development of voltage-sensitive optical probes should allow this all-optical mapping approach to become an important and high-throughput tool for mapping circuit interactions in the brain. PMID:26158003

Thermodynamic derivation of open circuit voltage in vanadium redox flow batteries

NASA Astrophysics Data System (ADS)

Pavelka, Michal; Wandschneider, Frank; Mazur, Petr

2015-10-01

Open circuit voltage of vanadium redox flow batteries is carefully calculated using equilibrium thermodynamics. This analysis reveals some terms in the Nernst relation which are usually omitted in literature. Due to the careful thermodynamic treatment, all uncertainties about the form of Nernst relation are removed except for uncertainties in activity coefficients of particular species. Moreover, it is shown (based again on equilibrium thermodynamics) that batteries with anion-exchange membranes follow different Nernst relation than batteries with cation-exchange membranes. The difference is calculated, and it is verified experimentally that the formula for anion-exchange membranes describes experiments with anion-exchange membranes better than the corresponding formula for cation-exchange membranes. In summary, careful thermodynamic calculation of open circuit voltage of vanadium redox flow batteries is presented, and the difference between voltage for anion-exchange and cation-exchange membranes is revealed.

Digital automatic gain amplifier

NASA Technical Reports Server (NTRS)

Holley, L. D.; Ward, J. O. (Inventor)

1978-01-01

A circuit is described for adjusting the amplitude of a reference signal to a predetermined level so as to permit subsequent data signals to be interpreted correctly. The circuit includes an operational amplifier having a feedback circuit connected between an output terminal and an input terminal; a bank of relays operably connected to a plurality of resistors; and a comparator comparing an output voltage of the amplifier with a reference voltage and generating a compared signal responsive thereto. Means is provided for selectively energizing the relays according to the compared signal from the comparator until the output signal from the amplifier equals to the reference signal. A second comparator is provided for comparing the output of the amplifier with a second voltage source so as to illuminate a lamp when the output signal from the amplifier exceeds the second voltage.

Improved test methods for determining lightning-induced voltages in aircraft

NASA Technical Reports Server (NTRS)

Crouch, K. E.; Plumer, J. A.

1980-01-01

A lumped parameter transmission line with a surge impedance matching that of the aircraft and its return lines was evaluated as a replacement for earlier current generators. Various test circuit parameters were evaluated using a 1/10 scale relative geometric model. Induced voltage response was evaluated by taking measurements on the NASA-Dryden Digital Fly by Wire F-8 aircraft. Return conductor arrangements as well as other circuit changes were also evaluated, with all induced voltage measurements being made on the same circuit for comparison purposes. The lumped parameter transmission line generates a concave front current wave with the peak di/dt near the peak of the current wave which is more representative of lightning. However, the induced voltage measurements when scaled by appropriate scale factors (peak current or di/dt) resulting from both techniques yield comparable results.

Cell chip temperature measurements in different operation regimes of HCPV modules

NASA Astrophysics Data System (ADS)

Rumyantsev, V. D.; Chekalin, A. V.; Davidyuk, N. Yu.; Malevskiy, D. A.; Pokrovskiy, P. V.; Sadchikov, N. A.; Pan'chak, A. N.

2013-09-01

A new method has been developed for accurate measurements of the solar cell temperature in maximum power point (MPP) operation regime in comparison with that in open circuit (OC) regime (TMPP and TOC). For this, an electronic circuit has been elaborated for fast variation of the cell load conditions and for voltage measurements, so that VOC values could serve as an indicator of TMPP at the first moment after the load disconnection. The method was verified in indoor investigations of the single-junction AlGaAs/GaAs cells under CW laser irradiation, where different modifications of the heat spreaders were involved. PV modules of the "SMALFOC" design (Small-size concentrators; Multijunction cells; "All-glass" structure; Lamination technology; Fresnel Optics for Concentration) with triple-junction InGaP/GaAs/Ge cells were examined outdoors to evaluate temperature regimes of their operation.

High speed preamplifier circuit, detection electronics, and radiation detection systems therefrom

DOEpatents

Riedel, Richard A [Knoxville, TN; Wintenberg, Alan L [Knoxville, TN; Clonts, Lloyd G [Knoxville, TN; Cooper, Ronald G [Oak Ridge, TN

2010-09-21

A preamplifier circuit for processing a signal provided by a radiation detector includes a transimpedance amplifier coupled to receive a current signal from a detector and generate a voltage signal at its output. A second amplification stage has an input coupled to an output of the transimpedance amplifier for providing an amplified voltage signal. Detector electronics include a preamplifier circuit having a first and second transimpedance amplifier coupled to receive a current signal from a first and second location on a detector, respectively, and generate a first and second voltage signal at respective outputs. A second amplification stage has an input coupled to an output of the transimpedance amplifiers for amplifying the first and said second voltage signals to provide first and second amplified voltage signals. A differential output stage is coupled to the second amplification stage for receiving the first and second amplified voltage signals and providing a pair of outputs from each of the first and second amplified voltage signals. Read out circuitry has an input coupled to receive both of the pair of outputs, the read out circuitry having structure for processing each of the pair of outputs, and providing a single digital output having a time-stamp therefrom.

Design, experiments and simulation of voltage transformers on the basis of a differential input D-dot sensor.

PubMed

Wang, Jingang; Gao, Can; Yang, Jie

2014-07-17

Currently available traditional electromagnetic voltage sensors fail to meet the measurement requirements of the smart grid, because of low accuracy in the static and dynamic ranges and the occurrence of ferromagnetic resonance attributed to overvoltage and output short circuit. This work develops a new non-contact high-bandwidth voltage measurement system for power equipment. This system aims at the miniaturization and non-contact measurement of the smart grid. After traditional D-dot voltage probe analysis, an improved method is proposed. For the sensor to work in a self-integrating pattern, the differential input pattern is adopted for circuit design, and grounding is removed. To prove the structure design, circuit component parameters, and insulation characteristics, Ansoft Maxwell software is used for the simulation. Moreover, the new probe was tested on a 10 kV high-voltage test platform for steady-state error and transient behavior. Experimental results ascertain that the root mean square values of measured voltage are precise and that the phase error is small. The D-dot voltage sensor not only meets the requirement of high accuracy but also exhibits satisfactory transient response. This sensor can meet the intelligence, miniaturization, and convenience requirements of the smart grid.

High voltage electrical amplifier having a short rise time

DOEpatents

Christie, David J.; Dallum, Gregory E.

1991-01-01

A circuit, comprising an amplifier and a transformer is disclosed that produces a high power pulse having a fast response time, and that responds to a digital control signal applied through a digital-to-analog converter. The present invention is suitable for driving a component such as an electro-optic modulator with a voltage in the kilovolt range. The circuit is stable at high frequencies and during pulse transients, and its impedance matching circuit matches the load impedance with the output impedance. The preferred embodiment comprises an input stage compatible with high-speed semiconductor components for amplifying the voltage of the input control signal, a buffer for isolating the input stage from the output stage; and a plurality of current amplifiers connected to the buffer. Each current amplifier is connected to a field effect transistor (FET), which switches a high voltage power supply to a transformer which then provides an output terminal for driving a load. The transformer comprises a plurality of transmission lines connected to the FETs and the load. The transformer changes the impedance and voltage of the output. The preferred embodiment also comprises a low voltage power supply for biasing the FETs at or near an operational voltage.

Solid state remote circuit selector switch

NASA Technical Reports Server (NTRS)

Peterson, V. S.

1970-01-01

Remote switching circuit utilizes voltage logic to switch on desired circuit. Circuit controls rotating multi-range pressure transducers in jet engine testing and can be used in coded remote circuit activator where sequence of switching has to occur in defined length of time to prevent false or undesired circuit activation.

Development of 600 kV triple resonance pulse transformer.

PubMed

Li, Mingjia; Zhang, Faqiang; Liang, Chuan; Xu, Zhou

2015-06-01

In this paper, a triple-resonance pulse transformer based on an air-core transformer is introduced. The voltage across the high-voltage winding of the air-core transformer is significantly less than the output voltage; instead, the full output voltage appears across the tuning inductor. The maximum ratio of peak load voltage to peak transformer voltage is 2.77 in theory. By analyzing pulse transformer's lossless circuit, the analytical expression for the output voltage and the characteristic equation of the triple-resonance circuit are presented. Design method for the triple-resonance pulse transformer (iterated simulation method) is presented, and a triple-resonance pulse transformer is developed based on the existing air-core transformer. The experimental results indicate that the maximum ratio of peak voltage across the load to peak voltage across the high-voltage winding of the air-core transformer is approximately 2.0 and the peak output voltage of the triple-resonance pulse transformer is approximately 600 kV.

A novel interface circuit for triboelectric nanogenerator

NASA Astrophysics Data System (ADS)

Yu, Wuqi; Ma, Jiahao; Zhang, Zhaohua; Ren, Tianling

2017-10-01

For most triboelectric nanogenerators (TENGs), the electric output should be a short AC pulse, which has the common characteristic of high voltage but low current. Thus it is necessary to convert the AC to DC and store the electric energy before driving conventional electronics. The traditional AC voltage regulator circuit which commonly consists of transformer, rectifier bridge, filter capacitor, and voltage regulator diode is not suitable for the TENG because the transformer’s consumption of power is appreciable if the TENG output is small. This article describes an innovative design of an interface circuit for a triboelectric nanogenerator that is transformerless and easily integrated. The circuit consists of large-capacity electrolytic capacitors that can realize to intermittently charge lithium-ion batteries and the control section contains the charging chip, the rectifying circuit, a comparator chip and switch chip. More important, the whole interface circuit is completely self-powered and self-controlled. Meanwhile, the chip is widely used in the circuit, so it is convenient to integrate into PCB. In short, this work presents a novel interface circuit for TENGs and makes progress to the practical application and industrialization of nanogenerators. Project supported by the National Natural Science Foundation of China (No. 61434001) and the ‘Thousands Talents’ Program for Pioneer Researchers and Its Innovation Team, China.

Annual Summary Report on Thermionic Cathode Project.

DTIC Science & Technology

1986-01-09

Voltage Operation The electron gun cathode is driven negative by a high voltageRadiation pulse modulator in the circuit of Figure 3-1. Typical current...tungsten filament. The bombardment heating system is stabilized by a feed- back control circuit . The power required to heat tne cathode is 315 W bom...project. The primary purpose of the first phase was to develop the bombardment heating circuit used to heat the LaB 6 cathode, and to test the beam

Molecular-Beam-Epitaxy Program

NASA Technical Reports Server (NTRS)

Sparks, Patricia D.

1988-01-01

Molecular Beam Epitaxy (MBE) computer program developed to aid in design of single- and double-junction cascade cells made of silicon. Cascade cell has efficiency 1 or 2 percent higher than single cell, with twice the open-circuit voltage. Input parameters include doping density, diffusion lengths, thicknesses of regions, solar spectrum, absorption coefficients of silicon (data included for 101 wavelengths), and surface recombination velocities. Results include maximum power, short-circuit current, and open-circuit voltage. Program written in FORTRAN IV.

High voltage pulse generator. [Patent application

DOEpatents

Fasching, G.E.

1975-06-12

An improved high-voltage pulse generator is described which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of the first rectifier connected between the first and second capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. The output voltage can be readily increased by adding additional charging networks. The circuit allows the peak level of the output to be easily varied over a wide range by using a variable autotransformer in the charging circuit.

A study of short test and charge retention test methods for nickel-cadmium spacecraft cells

NASA Technical Reports Server (NTRS)

Scott, W. R.

1975-01-01

Methods for testing nickel-cadmium cells for internal shorts and charge retention were studied. Included were (a) open circuit voltage decay after a brief charge, (b) open circuit voltage recovery after shorting, and (c) open circuit voltage decay and capacity loss after a full charge. The investigation included consideration of the effects of prior history, of conditioning cells prior to testing, and of various test method variables on the results of the tests. Sensitivity of the tests was calibrated in terms of equivalent external resistance. The results were correlated. It was shown that a large number of variables may affect the results of these tests. It is concluded that the voltage decay after a brief charge and the voltage recovery methods are more sensitive than the charged stand method, and can detect an internal short equivalent to a resistance of about (10,000/C)ohms where "C' is the numerical value of the capacity of the cell in ampere hours.

Electrical description of N2 capacitively coupled plasmas with the global model

NASA Astrophysics Data System (ADS)

Cao, Ming-Lu; Lu, Yi-Jia; Cheng, Jia; Ji, Lin-Hong; Engineering Design Team

2016-10-01

N2 discharges in a commercial capacitively coupled plasma reactor are modelled by a combination of an equivalent circuit and the global model, for a range of gas pressure at 1 4 Torr. The ohmic and inductive plasma bulk and the capacitive sheath are represented as LCR elements, with electrical characteristics determined by plasma parameters. The electron density and electron temperature are obtained from the global model in which a Maxwellian electron distribution is assumed. Voltages and currents are recorded by a VI probe installed after the match network. Using the measured voltage as an input, the current flowing through the discharge volume is calculated from the electrical model and shows excellent agreement with the measurements. The experimentally verified electrical model provides a simple and accurate description for the relationship between the external electrical parameters and the plasma properties, which can serve as a guideline for process window planning in industrial applications.

Impedance Matching Antenna-Integrated High-Efficiency Energy Harvesting Circuit

PubMed Central

Shinki, Yuharu; Shibata, Kyohei; Mansour, Mohamed

2017-01-01

This paper describes the design of a high-efficiency energy harvesting circuit with an integrated antenna. The circuit is composed of series resonance and boost rectifier circuits for converting radio frequency power into boosted direct current (DC) voltage. The measured output DC voltage is 5.67 V for an input of 100 mV at 900 MHz. Antenna input impedance matching is optimized for greater efficiency and miniaturization. The measured efficiency of this antenna-integrated energy harvester is 60% for −4.85 dBm input power and a load resistance equal to 20 kΩ at 905 MHz. PMID:28763043

Impedance Matching Antenna-Integrated High-Efficiency Energy Harvesting Circuit.

PubMed

Shinki, Yuharu; Shibata, Kyohei; Mansour, Mohamed; Kanaya, Haruichi

2017-08-01

This paper describes the design of a high-efficiency energy harvesting circuit with an integrated antenna. The circuit is composed of series resonance and boost rectifier circuits for converting radio frequency power into boosted direct current (DC) voltage. The measured output DC voltage is 5.67 V for an input of 100 mV at 900 MHz. Antenna input impedance matching is optimized for greater efficiency and miniaturization. The measured efficiency of this antenna-integrated energy harvester is 60% for -4.85 dBm input power and a load resistance equal to 20 kΩ at 905 MHz.

Direct Analysis of JV-Curves Applied to an Outdoor-Degrading CdTe Module (Presentation)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jordan, D; Kurtz, S.; Ulbrich, C.

2014-03-01

We present the application of a phenomenological four parameter equation to fit and analyze regularly measured current density-voltage JV curves of a CdTe module during 2.5 years of outdoor operation. The parameters are physically meaningful, i.e. the short circuit current density Jsc, open circuit voltage Voc and differential resistances Rsc, and Roc. For the chosen module, the fill factor FF degradation overweighs the degradation of Jsc and Voc. Interestingly, with outdoor exposure, not only the conductance at short circuit, Gsc, increases but also the Gsc(Jsc)-dependence. This is well explained with an increase in voltage dependent charge carrier collection in CdTe.

Proton Tolerance of SiGe Precision Voltage References for Extreme Temperature Range Electronics

NASA Astrophysics Data System (ADS)

Najafizadeh, Laleh; Bellini, Marco; Prakash, A. P. Gnana; Espinel, Gustavo A.; Cressler, John D.; Marshall, Paul W.; Marshall, Cheryl J.

2006-12-01

A comprehensive investigation of the effects of proton irradiation on the performance of SiGe BiCMOS precision voltage references intended for extreme environment operational conditions is presented. The voltage reference circuits were designed in two distinct SiGe BiCMOS technology platforms (first generation (50 GHz) and third generation (200 GHz)) in order to investigate the effect of technology scaling. The circuits were irradiated at both room temperature and at 77 K. Measurement results from the experiments indicate that the proton-induced changes in the SiGe bandgap references are minor, even down to cryogenic temperatures, clearly good news for the potential application of SiGe mixed-signal circuits in emerging extreme environments

TRIAC/SCR proportional control circuit

DOEpatents

Hughes, Wallace J.

1999-01-01

A power controller device which uses a voltage-to-frequency converter in conjunction with a zero crossing detector to linearly and proportionally control AC power being supplied to a load. The output of the voltage-to frequency converter controls the "reset" input of a R-S flip flop, while an "0" crossing detector controls the "set" input. The output of the flip flop triggers a monostable multivibrator controlling the SCR or TRIAC firing circuit connected to the load. Logic gates prevent the direct triggering of the multivibrator in the rare instance where the "reset" and "set" inputs of the flip flop are in coincidence. The control circuit can be supplemented with a control loop, providing compensation for line voltage variations.

A new LTPS TFT AC pixel circuit for an AMOLED

NASA Astrophysics Data System (ADS)

Yongwen, Zhang; Wenbin, Chen

2013-01-01

This work presents a new voltage programmed pixel circuit for an active-matrix organic light-emitting diode (AMOLED) display. The proposed pixel circuit consists of six low temperature polycrystalline silicon thin-film transistors (LTPS TFTs), one storage capacitor, and one OLED, and is verified by simulation work using HSPICE software. Besides effectively compensating for the threshold voltage variation of the driving TFT and OLED, the proposed pixel circuit offers an AC driving mode for the OLED, which can suppress the degradation of the OLED. Moreover, a high contrast ratio can be achieved by the proposed pixel circuit since the OLED does not emit any light except for the emission period.

[Design of High Frequency Signal Detecting Circuit of Human Body Impedance Used for Ultrashort Wave Diathermy Apparatus].

PubMed

Fan, Xu; Wang, Yunguang; Cheng, Haiping; Chong, Xiaochen

2016-02-01

The present circuit was designed to apply to human tissue impedance tuning and matching device in ultra-short wave treatment equipment. In order to judge if the optimum status of circuit parameter between energy emitter circuit and accepter circuit is in well syntony, we designed a high frequency envelope detect circuit to coordinate with automatic adjust device of accepter circuit, which would achieve the function of human tissue impedance matching and tuning. Using the sampling coil to receive the signal of amplitude-modulated wave, we compared the voltage signal of envelope detect circuit with electric current of energy emitter circuit. The result of experimental study was that the signal, which was transformed by the envelope detect circuit, was stable and could be recognized by low speed Analog to Digital Converter (ADC) and was proportional to the electric current signal of energy emitter circuit. It could be concluded that the voltage, transformed by envelope detect circuit can mirror the real circuit state of syntony and realize the function of human tissue impedance collecting.

Impact of Temporal Masking of Flip-Flop Upsets on Soft Error Rates of Sequential Circuits

NASA Astrophysics Data System (ADS)

Chen, R. M.; Mahatme, N. N.; Diggins, Z. J.; Wang, L.; Zhang, E. X.; Chen, Y. P.; Liu, Y. N.; Narasimham, B.; Witulski, A. F.; Bhuva, B. L.; Fleetwood, D. M.

2017-08-01

Reductions in single-event (SE) upset (SEU) rates for sequential circuits due to temporal masking effects are evaluated. The impacts of supply voltage, combinational-logic delay, flip-flop (FF) SEU performance, and particle linear energy transfer (LET) values are analyzed for SE cross sections of sequential circuits. Alpha particles and heavy ions with different LET values are used to characterize the circuits fabricated at the 40-nm bulk CMOS technology node. Experimental results show that increasing the delay of the logic circuit present between FFs and decreasing the supply voltage are two effective ways of reducing SE error rates for sequential circuits for particles with low LET values due to temporal masking. SEU-hardened FFs benefit less from temporal masking than conventional FFs. Circuit hardening implications for SEU-hardened and unhardened FFs are discussed.

Factors affecting the open-circuit voltage and electrode kinetics of some iron/titanium/redox flow cells

NASA Technical Reports Server (NTRS)

Reid, M. A.; Gahn, R. F.

1977-01-01

The effect of acid concentration on the performance of the iron-titanium redox flow cell was studied. When the acidity was increased, open-circuit voltages decreased on the titanium side but load voltages increased due to decreased polarization. The best load voltage occurs when there is high acidity on the titanium side coupled with low acidity on the iron side, but such cells show voltage losses with repeated cycling because of the diffusion of acid through the membrane. No membrane tested has been found capable of maintaining the differences in acidity. Chelating agents show some promise in reducing polarization at the Ti electrode and thus improving energy efficiency.

Electron transport in Bi2Se3 ultra thin films

NASA Astrophysics Data System (ADS)

Bauer, Sebastian; Bernhart, Alexander M.; Bobisch, Christian A.

2018-02-01

We studied the electronic transport properties of a 4 QL thin Bi2Se3 film in the hybridized phase on Si(111) by scanning tunneling potentiometry. When a transverse voltage is applied, the film exhibits a homogeneous electric field on the nm scale. In addition, thermovoltage signals with lateral nm variations are found which result from sample heating by the transverse current. The thermovoltage signals are directly correlated to morphological structures on the surface, i.e. step edges, and indicate a lateral variation of the local density of states at the Bi2Se3 surface. No discernible voltage drops appear at the surface so that the whole film serves as a current carrying medium and scattering at surface defects is less important.

Open-circuit voltage improvements in low-resistivity solar cells

NASA Technical Reports Server (NTRS)

Godlewski, M. P.; Klucher, T. M.; Mazaris, G. A.; Weizer, V. G.

1979-01-01

Mechanisms limiting the open-circuit voltage in 0.1 ohm-cm solar cells were investigated. It was found that a rather complicated multistep diffusion process could produce cells with significantly improved voltages. The voltage capabilities of various laboratory cells were compared independent of their absorption and collection efficiencies. This was accomplished by comparing the cells on the basis of their saturation currents or, equivalently, comparing their voltage outputs at a constant current-density level. The results show that for both the Lewis diffused emitter cell and the Spire ion-implanted emitter cell the base component of the saturation current is voltage controlling. The evidence for the University of Florida cells, although not very conclusive, suggests emitter control of the voltage in this device. The data suggest further that the critical voltage-limiting parameter for the Lewis cell is the electron mobility in the cell base.

30 CFR 77.704-10 - Tying into energized high-voltage surface circuits.

Code of Federal Regulations, 2010 CFR

2010-07-01

... OF LABOR COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS, SURFACE COAL MINES AND SURFACE WORK.... If the work of forming an additional circuit by tying into an energized high-voltage surface line is performed from the ground, any person performing such work must wear and employ all of the protective...

30 CFR 75.705-10 - Tying into energized high-voltage surface circuits.

Code of Federal Regulations, 2010 CFR

2010-07-01

....705-10 Tying into energized high-voltage surface circuits. If the work of forming an additional... performing such work must wear and employ all of the protective equipment and clothing required under the... designed for such purpose and must be adequately insulated and be maintained to protect such person from...

Circuit For Current-vs.-Voltage Tests Of Semiconductors

NASA Technical Reports Server (NTRS)

Huston, Steven W.

1991-01-01

Circuit designed for measurement of dc current-versus-voltage characteristics of semiconductor devices. Operates in conjunction with x-y pen plotter or digital storage oscilloscope, which records data. Includes large feedback resistors to prevent high currents damaging device under test. Principal virtues: low cost, simplicity, and compactness. Also used to evaluate diodes and transistors.

Programmable high-output-impedance, large-voltage compliance, microstimulator for low-voltage biomedical applications.

PubMed

Farahmand, Sina; Maghami, Mohammad Hossein; Sodagar, Amir M

2012-01-01

This paper reports on the design of a programmable, high output impedance, large voltage compliance microstimulator for low-voltage biomedical applications. A 6-bit binary-weighted digital to analog converter (DAC) is used to generate biphasic stimulus current pulses. A compact current mirror with large output voltage compliance and high output resistance conveys the current pulses to the target tissue. Designed and simulated in a standard 0.18µm CMOS process, the microstimulator circuit is capable of delivering a maximum stimulation current of 160µA to a 10-kΩ resistive load. Operated at a 1.8-V supply voltage, the output stage exhibits a voltage compliance of 1.69V and output resistance of 160MΩ at full scale stimulus current. Layout of the core microelectrode circuit measures 25.5µm×31.5µm.

Research on laser detonation pulse circuit with low-power based on super capacitor

NASA Astrophysics Data System (ADS)

Wang, Hao-yu; Hong, Jin; He, Aifeng; Jing, Bo; Cao, Chun-qiang; Ma, Yue; Chu, En-yi; Hu, Ya-dong

2018-03-01

According to the demand of laser initiating device miniaturization and low power consumption of weapon system, research on the low power pulse laser detonation circuit with super capacitor. Established a dynamic model of laser output based on super capacitance storage capacity, discharge voltage and programmable output pulse width. The output performance of the super capacitor under different energy storage capacity and discharge voltage is obtained by simulation. The experimental test system was set up, and the laser diode of low power pulsed laser detonation circuit was tested and the laser output waveform of laser diode in different energy storage capacity and discharge voltage was collected. Experiments show that low power pulse laser detonation based on super capacitor energy storage circuit discharge with high efficiency, good transient performance, for a low power consumption requirement, for laser detonation system and low power consumption and provide reference light miniaturization of engineering practice.

Evaluation of high-voltage, high-power, solid-state remote power controllers for amps

NASA Technical Reports Server (NTRS)

Callis, Charles P.

1987-01-01

The Electrical Power Branch at Marshall Space Flight Center has a Power System Development Facility where various power circuit breadboards are tested and evaluated. This project relates to the evaluation of a particular remote power controller (RPC) energizing high power loads. The Facility equipment permits the thorough testing and evaluation of high-voltage, high-power solid-state remote power controllers. The purpose is to evaluate a Type E, 30 Ampere, 200 V dc remote power controller. Three phases of the RPC evaluation are presented. The RPC is evaluated within a low-voltage, low-power circuit to check its operational capability. The RPC is then evaluated while performing switch/circuit breaker functions within a 200 V dc, 30 Ampere power circuit. The final effort of the project relates to the recommended procedures for installing these RPC's into the existing Autonomously Managed Power System (AMPS) breadboard/test facility at MSFC.

SEMICONDUCTOR INTEGRATED CIRCUITS: A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure

NASA Astrophysics Data System (ADS)

Jizhi, Liu; Xingbi, Chen

2009-12-01

A new quasi-three-dimensional (quasi-3D) numeric simulation method for a high-voltage level-shifting circuit structure is proposed. The performances of the 3D structure are analyzed by combining some 2D device structures; the 2D devices are in two planes perpendicular to each other and to the surface of the semiconductor. In comparison with Davinci, the full 3D device simulation tool, the quasi-3D simulation method can give results for the potential and current distribution of the 3D high-voltage level-shifting circuit structure with appropriate accuracy and the total CPU time for simulation is significantly reduced. The quasi-3D simulation technique can be used in many cases with advantages such as saving computing time, making no demands on the high-end computer terminals, and being easy to operate.

Derivation of the open-circuit voltage of organic solar cells

NASA Astrophysics Data System (ADS)

Staple, Douglas B.; Oliver, Patricia A. K.; Hill, Ian G.

2014-05-01

Organic photovoltaic cells have improved in efficiency from 1% two decades ago to over 10% today. Continued improvement necessitates a theoretical understanding of the factors determining efficiency. Organic photovoltaic efficiency can be parameterized in terms of open-circuit voltage, short-circuit current, and fill factor. Here we present a theory that explains the dependencies of open-circuit voltage on semiconductor energy levels, light intensity, solar cell and light-source temperatures, charge-carrier recombination, and external fluorescence efficiency. The present theory also explains why recombination at the donor-acceptor heterointerface is a dominant process in heterojunction-based cells. Furthermore, the Carnot efficiency appears, highlighting the connection to basic thermodynamics. The theory presented here is consistent with and builds on the experimental and theoretical observations already in the literature. Crucially, the present theory can be straightforwardly derived in a line-by-line fashion using standard tools from statistical physics.

Electrical Circuit Tester

DOEpatents

Love, Frank

2006-04-18

An electrical circuit testing device is provided, comprising a case, a digital voltage level testing circuit with a display means, a switch to initiate measurement using the device, a non-shorting switching means for selecting pre-determined electrical wiring configurations to be tested in an outlet, a terminal block, a five-pole electrical plug mounted on the case surface and a set of adapters that can be used for various multiple-pronged electrical outlet configurations for voltages from 100 600 VAC from 50 100 Hz.

A high resolution on-chip delay sensor with low supply-voltage sensitivity for high-performance electronic systems.

PubMed

Sheng, Duo; Lai, Hsiu-Fan; Chan, Sheng-Min; Hong, Min-Rong

2015-02-13

An all-digital on-chip delay sensor (OCDS) circuit with high delay-measurement resolution and low supply-voltage sensitivity for efficient detection and diagnosis in high-performance electronic system applications is presented. Based on the proposed delay measurement scheme, the quantization resolution of the proposed OCDS can be reduced to several picoseconds. Additionally, the proposed cascade-stage delay measurement circuit can enhance immunity to supply-voltage variations of the delay measurement resolution without extra self-biasing or calibration circuits. Simulation results show that the delay measurement resolution can be improved to 1.2 ps; the average delay resolution variation is 0.55% with supply-voltage variations of ±10%. Moreover, the proposed delay sensor can be implemented in an all-digital manner, making it very suitable for high-performance electronic system applications as well as system-level integration.

An improved low-voltage ride-through performance of DFIG based wind plant using stator dynamic composite fault current limiter.

PubMed

Gayen, P K; Chatterjee, D; Goswami, S K

2016-05-01

In this paper, an enhanced low-voltage ride-through (LVRT) performance of a grid connected doubly fed induction generator (DFIG) has been presented with the usage of stator dynamic composite fault current limiter (SDCFCL). This protection circuit comprises of a suitable series resistor-inductor combination and parallel bidirectional semiconductor switch. The SDCFCL facilitates double benefits such as reduction of rotor induced open circuit voltage due to increased value of stator total inductance and concurrent increase of rotor impedance. Both effects will limit rotor circuit over current and over voltage situation more secured way in comparison to the conventional scheme like the dynamic rotor current limiter (RCL) during any type of fault situation. The proposed concept is validated through the simulation study of the grid integrated 2.0MW DFIG. Copyright © 2016 ISA. Published by Elsevier Ltd. All rights reserved.

Optically triggered high voltage switch network and method for switching a high voltage

DOEpatents

El-Sharkawi, Mohamed A.; Andexler, George; Silberkleit, Lee I.

1993-01-19

An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

Automatic control and detector for three-terminal resistance measurement

DOEpatents

Fasching, George E.

1976-10-26

A device is provided for automatic control and detection in a three-terminal resistance measuring instrument. The invention is useful for the rapid measurement of the resistivity of various bulk material with a three-terminal electrode system. The device maintains the current through the sample at a fixed level while measuring the voltage across the sample to detect the sample resistance. The three-electrode system contacts the bulk material and the current through the sample is held constant by means of a control circuit connected to a first of the three electrodes and works in conjunction with a feedback controlled amplifier to null the voltage between the first electrode and a second electrode connected to the controlled amplifier output. An A.C. oscillator provides a source of sinusoidal reference voltage of the frequency at which the measurement is to be executed. Synchronous reference pulses for synchronous detectors in the control circuit and an output detector circuit are provided by a synchronous pulse generator. The output of the controlled amplifier circuit is sampled by an output detector circuit to develop at an output terminal thereof a D.C. voltage which is proportional to the sample resistance R. The sample resistance is that segment of the sample between the area of the first electrode and the third electrode, which is connected to ground potential.

Nonfullerene Tandem Organic Solar Cells with High Open-Circuit Voltage of 1.97 V.

PubMed

Liu, Wenqing; Li, Shuixing; Huang, Jiang; Yang, Shida; Chen, Jiehuan; Zuo, Lijian; Shi, Minmin; Zhan, Xiaowei; Li, Chang-Zhi; Chen, Hongzheng

2016-11-01

Small-molecule nonfullerene-based tandem organic solar cells (OSCs) are fabricated for the first time by utilizing P3HT:SF(DPPB) 4 and PTB7-Th:IEIC bulk heterojunctions as the front and back subcells, respectively. A power conversion efficiency of 8.48% is achieved with an ultrahigh open-circuit voltage of 1.97 V, which is the highest voltage value reported to date among efficient tandem OSCs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A MEMS Interface IC With Low-Power and Wide-Range Frequency-to-Voltage Converter for Biomedical Applications.

PubMed

Arefin, Md Shamsul; Redouté, Jean-Michel; Yuce, Mehmet Rasit

2016-04-01

This paper presents an interface circuit for capacitive and inductive MEMS biosensors using an oscillator and a charge pump based frequency-to-voltage converter. Frequency modulation using a differential crossed coupled oscillator is adopted to sense capacitive and inductive changes. The frequency-to-voltage converter is designed with a negative feedback system and external controlling parameters to adjust the sensitivity, dynamic range, and nominal point for the measurement. The sensitivity of the frequency-to-voltage converter is from 13.28 to 35.96 mV/MHz depending on external voltage and charging current. The sensitivity ranges of the capacitive and inductive interface circuit are 17.08 to 54.4 mV/pF and 32.11 to 82.88 mV/mH, respectively. A capacitive MEMS based pH sensor is also connected with the interface circuit to measure the high acidic gastric acid throughout the digestive tract. The sensitivity for pH from 1 to 3 is 191.4 mV/pH with 550 μV(pp) noise. The readout circuit is designed and fabricated using the UMC 0.18 μm CMOS technology. It occupies an area of 0.18 mm (2) and consumes 11.8 mW.

Sequential power-up circuit

DOEpatents

Kronberg, James W.

1992-01-01

A sequential power-up circuit for starting several electrical load elements in series to avoid excessive current surge, comprising a voltage ramp generator and a set of voltage comparators, each comparator having a different reference voltage and interfacing with a switch that is capable of turning on one of the load elements. As the voltage rises, it passes the reference voltages one at a time and causes the switch corresponding to that voltage to turn on its load element. The ramp is turned on and off by a single switch or by a logic-level electrical signal. The ramp rate for turning on the load element is relatively slow and the rate for turning the elements off is relatively fast. Optionally, the duration of each interval of time between the turning on of the load elements is programmable.

Trap Healing for High-Performance Low-Voltage Polymer Transistors and Solution-Based Analog Amplifiers on Foil.

PubMed

Pecunia, Vincenzo; Nikolka, Mark; Sou, Antony; Nasrallah, Iyad; Amin, Atefeh Y; McCulloch, Iain; Sirringhaus, Henning

2017-06-01

Solution-processed semiconductors such as conjugated polymers have great potential in large-area electronics. While extremely appealing due to their low-temperature and high-throughput deposition methods, their integration in high-performance circuits has been difficult. An important remaining challenge is the achievement of low-voltage circuit operation. The present study focuses on state-of-the-art polymer thin-film transistors based on poly(indacenodithiophene-benzothiadiazole) and shows that the general paradigm for low-voltage operation via an enhanced gate-to-channel capacitive coupling is unable to deliver high-performance device behavior. The order-of-magnitude longitudinal-field reduction demanded by low-voltage operation plays a fundamental role, enabling bulk trapping and leading to compromised contact properties. A trap-reduction technique based on small molecule additives, however, is capable of overcoming this effect, allowing low-voltage high-mobility operation. This approach is readily applicable to low-voltage circuit integration, as this work exemplifies by demonstrating high-performance analog differential amplifiers operating at a battery-compatible power supply voltage of 5 V with power dissipation of 11 µW, and attaining a voltage gain above 60 dB at a power supply voltage below 8 V. These findings constitute an important milestone in realizing low-voltage polymer transistors for solution-based analog electronics that meets performance and power-dissipation requirements for a range of battery-powered smart-sensing applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Novel high-gain, improved-bandwidth, finned-ladder V-band Traveling-Wave Tube slow-wave circuit design

NASA Technical Reports Server (NTRS)

Kory, Carol L.; Wilson, Jeffrey D.

1994-01-01

The V-band frequency range of 59-64 GHz is a region of the millimeter-wave spectrum that has been designated for inter-satellite communications. As a first effort to develop a high-efficiency V-band Traveling-Wave Tube (TWT), variations on a ring-plane slow-wave circuit were computationally investigated to develop an alternative to the more conventional ferruled coupled-cavity circuit. The ring-plane circuit was chosen because of its high interaction impedance, large beam aperture, and excellent thermal dissipation properties. Despite these advantages, however, low bandwidth and high voltage requirements have, until now, prevented its acceptance outside the laboratory. In this paper, the three-dimensional electrodynamic simulation code MAFIA (solution of MAxwell's Equation by the Finite-Integration-Algorithm) is used to investigate methods of increasing the bandwidth and lowering the operating voltage of the ring-plane circuit. Calculations of frequency-phase dispersion, beam on-axis interaction impedance, attenuation and small-signal gain per wavelength were performed for various geometric variations and loading distributions of the ring-plane TWT slow-wave circuit. Based on the results of the variations, a circuit termed the finned-ladder TWT slow-wave circuit was designed and is compared here to the scaled prototype ring-plane and a conventional ferruled coupled-cavity TWT circuit over the V-band frequency range. The simulation results indicate that this circuit has a much higher gain, significantly wider bandwidth, and a much lower voltage requirement than the scaled ring-plane prototype circuit, while retaining its excellent thermal dissipation properties. The finned-ladder circuit has a much larger small-signal gain per wavelength than the ferruled coupled-cavity circuit, but with a moderate sacrifice in bandwidth.

30 CFR 75.800-1 - Circuit breakers; location.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Circuit breakers; location. 75.800-1 Section 75.800-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY... § 75.800-1 Circuit breakers; location. Circuit breakers protecting high-voltage circuits entering an...

Solid state control system for oil well bailer pump

DOE Office of Scientific and Technical Information (OSTI.GOV)

Senghaas, K. A.; Senghaas, P.

1985-05-14

A solid state switching controller for use with various types of oil well bailer pumps. Individually programmable steps with lockouts provide multiple mutual exclusivity between various circuit operations. A trickle charge battery system powers the control circuits. A tank overflow float protects against oil spillage. An automatic production rate adjustment circuit is provided which increases cycle time in proportion to the rate of production. The circuit includes a low power voltage detector for disabling the control circuits until the line voltage is acceptable. A three-phase power and control system with an isolation transformer for the controls avoids unreliable ground connections.more » The timers include a dividing circuit with an RC circuit. All power actuated apparatus are actuated by triac switches which are controlled by an opto driver. The bailer brake is pulse actuated for allowing the bailer to sink into crude oil without excess cable looseness.« less

Device, system and method for a sensing electrical circuit

NASA Technical Reports Server (NTRS)

Vranish, John M. (Inventor)

2009-01-01

The invention relates to a driven ground electrical circuit. A driven ground is a current-measuring ground termination to an electrical circuit with the current measured as a vector with amplification. The driven ground module may include an electric potential source V.sub.S driving an electric current through an impedance (load Z) to a driven ground. Voltage from the source V.sub.S excites the minus terminal of an operational amplifier inside the driven ground which, in turn, may react by generating an equal and opposite voltage to drive the net potential to approximately zero (effectively ground). A driven ground may also be a means of passing information via the current passing through one grounded circuit to another electronic circuit as input. It may ground one circuit, amplify the information carried in its current and pass this information on as input to the next circuit.

An Overview of Dynamic Contact Resistance Measurement of HV Circuit Breakers

NASA Astrophysics Data System (ADS)

Bhole, A. A.; Gandhare, W. Z.

2016-06-01

With the deregulation of the electrical power industry, utilities and service companies are operating in a changing business environment. High voltage circuit breakers are extremely important for the function of modern electric power supply systems. The need to predict the proper function of circuit breaker grew over the years as the transmission networks expanded. The maintenance of circuit breakers deserves special consideration because of their importance for routine switching and for protection of other equipments. Electric transmission system breakups and equipment destruction can occur if a circuit breaker fails to operate because of a lack of preventive maintenance. Dynamic Contact Resistance Measurement (DCRM) is known as an effective technique for assessing the condition of power circuit breakers contacts and operating mechanism. This paper gives a general review about DCRM. It discusses the practical case studies on use of DCRM for condition assessment of high voltage circuit breakers.

A Complete Multimode Equivalent-Circuit Theory for Electrical Design

PubMed Central

Williams, Dylan F.; Hayden, Leonard A.; Marks, Roger B.

1997-01-01

This work presents a complete equivalent-circuit theory for lossy multimode transmission lines. Its voltages and currents are based on general linear combinations of standard normalized modal voltages and currents. The theory includes new expressions for transmission line impedance matrices, symmetry and lossless conditions, source representations, and the thermal noise of passive multiports. PMID:27805153

The Most Energy Efficient Way to Charge the Capacitor in an RC Circuit

ERIC Educational Resources Information Center

Wang, Dake

2017-01-01

The voltage waveform that minimizes the energy loss in the resistance when charging the capacitor in a resistor-capacitor circuit is investigated using the calculus of variation. A linear voltage ramp gives the best efficiency, which means a constant current source should be used for charging. Comparison between constant current source and…

An Unsolved Electric Circuit: A Common Misconception

ERIC Educational Resources Information Center

Harsha, N. R. Sree; Sreedevi, A.; Prakash, Anupama

2015-01-01

Despite a number of theories in circuit analysis, little is known about the behaviour of ideal equal voltage sources in parallel, connected across a resistive load. We neither have any theory that can predict the voltage source that provides the load current, nor is there any method to test it experimentally. In a series of experiments performed…

Benzothiadiazole-based polymer for single and double junction solar cells with high open circuit voltage.

PubMed

Venkatesan, Swaminathan; Ngo, Evan C; Chen, Qiliang; Dubey, Ashish; Mohammad, Lal; Adhikari, Nirmal; Mitul, Abu Farzan; Qiao, Qiquan

2014-06-21

Single and double junction solar cells with high open circuit voltage were fabricated using poly{thiophene-2,5-diyl-alt-[5,6-bis(dodecyloxy)benzo[c][1,2,5]thiadiazole]-4,7-diyl} (PBT-T1) blended with fullerene derivatives in different weight ratios. The role of fullerene loading on structural and morphological changes was investigated using atomic force microscopy (AFM) and X-ray diffraction (XRD). The XRD and AFM measurements showed that a higher fullerene mixing ratio led to breaking of inter-chain packing and hence resulted in smaller disordered polymer domains. When the PBT-T1:PC60BM weight ratio was 1 : 1, the polymer retained its structural order; however, large aggregated domains formed, leading to poor device performance due to low fill factor and short circuit current density. When the ratio was increased to 1 : 2 and then 1 : 3, smaller amorphous domains were observed, which improved photovoltaic performance. The 1 : 2 blending ratio was optimal due to adequate charge transport pathways giving rise to moderate short circuit current density and fill factor. Adding 1,8-diiodooctane (DIO) additive into the 1 : 2 blend films further improved both the short circuit current density and fill factor, leading to an increased efficiency to 4.5% with PC60BM and 5.65% with PC70BM. These single junction solar cells exhibited a high open circuit voltage at ∼ 0.9 V. Photo-charge extraction by linearly increasing voltage (Photo-CELIV) measurements showed the highest charge carrier mobility in the 1 : 2 film among the three ratios, which was further enhanced by introducing the DIO. The Photo-CELIV measurements with varying delay times showed significantly higher extracted charge carrier density for cells processed with DIO. Tandem devices using P3HT:IC60BA as bottom cell and PBT-T1:PC60BM as top cell exhibited a high open circuit voltage of 1.62 V with 5.2% power conversion efficiency.

TRIAC/SCR proportional control circuit

DOEpatents

Hughes, W.J.

1999-04-06

A power controller device is disclosed which uses a voltage-to-frequency converter in conjunction with a zero crossing detector to linearly and proportionally control AC power being supplied to a load. The output of the voltage-to frequency converter controls the ``reset`` input of a R-S flip flop, while an ``0`` crossing detector controls the ``set`` input. The output of the flip flop triggers a monostable multivibrator controlling the SCR or TRIAC firing circuit connected to the load. Logic gates prevent the direct triggering of the multivibrator in the rare instance where the ``reset`` and ``set`` inputs of the flip flop are in coincidence. The control circuit can be supplemented with a control loop, providing compensation for line voltage variations. 9 figs.

A single supply biopotential amplifier.

PubMed

Spinelli, E M; Martinez, N H; Mayosky, M A

2001-04-01

A biopotential amplifier for single supply operation is presented. It uses a Driven Right Leg Circuit (DRL) to drive the patient's body to a DC common mode voltage, centering biopotential signals with respect to the amplifier's input voltage range. This scheme ensures proper range operation when a single power supply is used. The circuit described is especially suited for low consumption, battery-powered applications, requiring a single battery and avoiding switching voltage inverters to achieve dual supplies. The generic circuit is described and, as an example, a biopotential amplifier with a gain of 60 dB and a DC input range of +/-200 mV was implemented using low power operational amplifiers. A Common Mode Rejection Ratio (CMRR) of 126 dB at 50 Hz was achieved without trimming.

Delta connected resonant snubber circuit

DOEpatents

Lai, J.S.; Peng, F.Z.; Young, R.W. Sr.; Ott, G.W. Jr.

1998-01-20

A delta connected, resonant snubber-based, soft switching, inverter circuit achieves lossless switching during dc-to-ac power conversion and power conditioning with minimum component count and size. Current is supplied to the resonant snubber branches solely by the dc supply voltage through the main inverter switches and the auxiliary switches. Component count and size are reduced by use of a single semiconductor switch in the resonant snubber branches. Component count is also reduced by maximizing the use of stray capacitances of the main switches as parallel resonant capacitors. Resonance charging and discharging of the parallel capacitances allows lossless, zero voltage switching. In one embodiment, circuit component size and count are minimized while achieving lossless, zero voltage switching within a three-phase inverter. 36 figs.

Delta connected resonant snubber circuit

DOEpatents

Lai, Jih-Sheng; Peng, Fang Zheng; Young, Sr., Robert W.; Ott, Jr., George W.

1998-01-01

A delta connected, resonant snubber-based, soft switching, inverter circuit achieves lossless switching during dc-to-ac power conversion and power conditioning with minimum component count and size. Current is supplied to the resonant snubber branches solely by the dc supply voltage through the main inverter switches and the auxiliary switches. Component count and size are reduced by use of a single semiconductor switch in the resonant snubber branches. Component count is also reduced by maximizing the use of stray capacitances of the main switches as parallel resonant capacitors. Resonance charging and discharging of the parallel capacitances allows lossless, zero voltage switching. In one embodiment, circuit component size and count are minimized while achieving lossless, zero voltage switching within a three-phase inverter.

New modeling method for the dielectric relaxation of a DRAM cell capacitor

NASA Astrophysics Data System (ADS)

Choi, Sujin; Sun, Wookyung; Shin, Hyungsoon

2018-02-01

This study proposes a new method for automatically synthesizing the equivalent circuit of the dielectric relaxation (DR) characteristic in dynamic random access memory (DRAM) without frequency dependent capacitance measurement. Charge loss due to DR can be observed by a voltage drop at the storage node and this phenomenon can be analyzed by an equivalent circuit. The Havariliak-Negami model is used to accurately determine the electrical characteristic parameters of an equivalent circuit. The DRAM sensing operation is performed in HSPICE simulations to verify this new method. The simulation demonstrates that the storage node voltage drop resulting from DR and the reduction in the sensing voltage margin, which has a critical impact on DRAM read operation, can be accurately estimated using this new method.

Exploring the Use of the LT3480 (RH3480) Circuit as Low-Power, Low-Voltage Solar Array Regulator

NASA Astrophysics Data System (ADS)

Garrigos, A.; Lizan, J. L.; Blanes, J. M.; Gutierrez, R.

2014-08-01

With the advent of PoL technology, several commercial integrated switching regulators already have their space- qualified versions. Apart of PoL and secondary supply applications, other functions can be explored using those integrated circuits. In this work, the Solar Array Regulator function is analyzed using the commercial LT3480 circuit, which has the space counterpart (RH3480) commercialized by MSK and named MSK5058RH and later MSK5031 (but not rad-hard). Input voltage regulation, taper charge, protection functions and module parallelization are studied and verified experimentally in a low-voltage, low-power MPPT battery bus configuration. Potential users of this approach are micro and nano-satellites power systems.

Transport properties of nanocomposite and its simulation with L-R-C circuit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gangopadhyay, Arnab, E-mail: agangulyphysics@gmail.com; Sarkar, Aditi, E-mail: agangulyphysics@gmail.com; Sarkar, A., E-mail: agangulyphysics@gmail.com

2014-04-24

The nano particles are represented in this communication by L-R-C equivalent circuit. The dc current voltage characteristics (CVC) of the proposed circuit have simulated using Circuit-Maker ® 2000. Experimental investigation on ZnO nano-composite with capping material gum acacia shows similar CVC. NPs are represented by C-R combinations to manifest the Coulomb blockade effect of a quantum dot. The capping material is represented by an inductor along with a resistance in series. Nine NPs with capping matrix are simulated. The dc current voltage characteristics (CVC) and gross feature of polarization nature obtained by experiment and simulation study are consistent.

A comprehensive equivalent circuit model of all-vanadium redox flow battery for power system analysis

NASA Astrophysics Data System (ADS)

Zhang, Yu; Zhao, Jiyun; Wang, Peng; Skyllas-Kazacos, Maria; Xiong, Binyu; Badrinarayanan, Rajagopalan

2015-09-01

Electrical equivalent circuit models demonstrate excellent adaptability and simplicity in predicting the electrical dynamic response of the all-vanadium redox flow battery (VRB) system. However, only a few publications that focus on this topic are available. The paper presents a comprehensive equivalent circuit model of VRB for system level analysis. The least square method is used to identify both steady-state and dynamic characteristics of VRB. The inherent features of the flow battery such as shunt current, ion diffusion and pumping energy consumption are also considered. The proposed model consists of an open-circuit voltage source, two parasitic shunt bypass circuits, a 1st order resistor-capacitor network and a hydraulic circuit model. Validated with experimental data, the proposed model demonstrates excellent accuracy. The mean-error of terminal voltage and pump consumption are 0.09 V and 0.49 W respectively. Based on the proposed model, self-discharge and system efficiency are studied. An optimal flow rate which maximizes the system efficiency is identified. Finally, the dynamic responses of the proposed VRB model under step current profiles are presented. Variables such as SOC and stack terminal voltage can be provided.

Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors.

PubMed

Kim, David K; Lai, Yuming; Diroll, Benjamin T; Murray, Christopher B; Kagan, Cherie R

2012-01-01

Colloidal semiconductor nanocrystals are emerging as a new class of solution-processable materials for low-cost, flexible, thin-film electronics. Although these colloidal inks have been shown to form single, thin-film field-effect transistors with impressive characteristics, the use of multiple high-performance nanocrystal field-effect transistors in large-area integrated circuits has not been shown. This is needed to understand and demonstrate the applicability of these discrete nanocrystal field-effect transistors for advanced electronic technologies. Here we report solution-deposited nanocrystal integrated circuits, showing nanocrystal integrated circuit inverters, amplifiers and ring oscillators, constructed from high-performance, low-voltage, low-hysteresis CdSe nanocrystal field-effect transistors with electron mobilities of up to 22 cm(2) V(-1) s(-1), current modulation >10(6) and subthreshold swing of 0.28 V dec(-1). We fabricated the nanocrystal field-effect transistors and nanocrystal integrated circuits from colloidal inks on flexible plastic substrates and scaled the devices to operate at low voltages. We demonstrate that colloidal nanocrystal field-effect transistors can be used as building blocks to construct complex integrated circuits, promising a viable material for low-cost, flexible, large-area electronics.

Modeling of a Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; MacLeod, Todd C.; Ho, Fat Duen

2005-01-01

Considerable research has been performed by several organizations in the use of the Metal- Ferroelectric-Semiconductor Field-Effect Transistors (MFSFET) in memory circuits. However, research has been limited in expanding the use of the MFSFET to other electronic circuits. This research project investigates the modeling of a NAND gate constructed from MFSFETs. The NAND gate is one of the fundamental building blocks of digital electronic circuits. The first step in forming a NAND gate is to develop an inverter circuit. The inverter circuit was modeled similar to a standard CMOS inverter. A n-channel MFSFET with positive polarization was used for the n-channel transistor, and a n-channel MFSFET with negative polarization was used for the p-channel transistor. The MFSFETs were simulated by using a previously developed current model which utilized a partitioned ferroelectric layer. The inverter voltage transfer curve was obtained over a standard input of zero to five volts. Then a 2-input NAND gate was modeled similar to the inverter circuit. Voltage transfer curves were obtained for the NAND gate for various configurations of input voltages. The resultant data shows that it is feasible to construct a NAND gate with MFSFET transistors.

Elevated voltage level I.sub.DDQ failure testing of integrated circuits

DOEpatents

Righter, Alan W.

1996-01-01

Burn in testing of static CMOS IC's is eliminated by I.sub.DDQ testing at elevated voltage levels. These voltage levels are at least 25% higher than the normal operating voltage for the IC but are below voltage levels that would cause damage to the chip.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Olama, Mohammed M; Allgood, Glenn O; Kuruganti, Phani Teja

Electric utilities have a main responsibility to protect the lives and safety of their workers when they are working on low-, medium-, and high-voltage power lines and distribution circuits. With the anticipated widespread deployment of smart grids, a secure and highly reliable means of maintaining isolation of customer-owned distributed generation (DG) from the affected distribution circuits during maintenance is necessary to provide a fully de-energized work area, ensure utility personnel safety, and prevent hazards that can lead to accidents such as accidental electrocution from unanticipated power sources. Some circuits are serviced while energized (live line work) while others are de-energizedmore » for maintenance. For servicing de-energized circuits and equipment, lock-out tag-out (LOTO) programs provide a verifiable procedure for ensuring that circuit breakers are locked in the off state and tagged to indicate that status to operational personnel so that the lines will be checked for voltage to verify they are de-energized. The de-energized area is isolated from any energized sources, which traditionally are the substations. This procedure works well when all power sources and their interconnections are known armed with this knowledge, utility personnel can determine the appropriate circuits to de-energize for isolating the target line or equipment. However, with customer-owned DG tied into the grid, the risk of inadvertently reenergizing a circuit increases because circuit connections may not be adequately documented and are not under the direct control of the local utility. Thus, the active device may not be properly de-energized or isolated from the work area. Further, a remote means of de-energizing and locking out energized devices provides an opportunity for greatly reduced safety risk to utility personnel compared to manual operations. In this paper, we present a remotely controllable LOTO system that allows individual workers to determine the configuration and status of electrical system circuits and permit them to lock out customer-owned DG devices for safety purposes using a highly secure and ultra-reliable radio signal. The system consists of: (1) individual personal lockout devices, (2) lockout communications and logic module at circuit breakers, which are located at all DG devices, and (3) a database and configuration control process located at the utility operations center. The lockout system is a close permissive, i.e., loss of control power or communications will cause the circuit breaker to open. Once the DG device is tripped open, a visual means will provide confirmation of a loss of voltage and current that verifies the disconnected status of the DG. Further the utility personnel will be able to place their own lock electronically on the system to ensure a lockout functionally. The proposed LOTO system provides enhanced worker safety and protection against unintended energized lines when DG is present. The main approaches and challenges encountered through designing the proposed region-wide LOTO system are discussed in this paper. These approaches include: (1) evaluating the reliability of the proposed approach under N-modular redundancy with voter/spares configurations and (2) conducting a system level risk assessment study using the failure modes and effects analysis (FMEA) technique to identify and rank failure modes by probability of occurrence, probability of detection, and severity of consequences. This ranking allows a cost benefits analysis to be conducted such that dollars and efforts will be applied to the failures that provide greatest incremental gains in system capability (resilience, survivability, security, reliability, availability, etc.) per dollar spent whether capital, operations, or investment. Several simulation scenarios and their results are presented to demonstrate the viability of these approaches.« less

Design, Experiments and Simulation of Voltage Transformers on the Basis of a Differential Input D-dot Sensor

PubMed Central

Wang, Jingang; Gao, Can; Yang, Jie

2014-01-01

Currently available traditional electromagnetic voltage sensors fail to meet the measurement requirements of the smart grid, because of low accuracy in the static and dynamic ranges and the occurrence of ferromagnetic resonance attributed to overvoltage and output short circuit. This work develops a new non-contact high-bandwidth voltage measurement system for power equipment. This system aims at the miniaturization and non-contact measurement of the smart grid. After traditional D-dot voltage probe analysis, an improved method is proposed. For the sensor to work in a self-integrating pattern, the differential input pattern is adopted for circuit design, and grounding is removed. To prove the structure design, circuit component parameters, and insulation characteristics, Ansoft Maxwell software is used for the simulation. Moreover, the new probe was tested on a 10 kV high-voltage test platform for steady-state error and transient behavior. Experimental results ascertain that the root mean square values of measured voltage are precise and that the phase error is small. The D-dot voltage sensor not only meets the requirement of high accuracy but also exhibits satisfactory transient response. This sensor can meet the intelligence, miniaturization, and convenience requirements of the smart grid. PMID:25036333

Single Event Transients in Voltage Regulators for FPGA Power Supply Applications

NASA Technical Reports Server (NTRS)

Poivey, Christian; Sanders, Anthony; Kim, Hak; Phan, Anthony; Forney, Jim; LaBel, Kenneth A.; Karsh, Jeremy; Pursley, Scott; Kleyner, Igor; Katz, Richard

2006-01-01

As with other bipolar analog devices, voltage regulators are known to be sensitive to single event transients (SET). In typical applications, large output capacitors are used to provide noise immunity. Therefore, since SET amplitude and duration are generally small, they are often of secondary importance due to this capacitance filtering. In low voltage applications, however, even small SET are a concern. Over-voltages may cause destructive conditions. Under-voltages may cause functional interrupts and may also trigger electrical latchup conditions. In addition, internal protection circuits which are affected by load as well as internal thermal effects can also be triggered from heavy ions, causing dropouts or shutdown ranging from milliseconds to seconds. In the case of FPGA power supplies applications, SETS are critical. For example, in the case of Actel FPGA RTAX family, core power supply voltage is 1.5V. Manufacturer specifies an absolute maximum rating of 1.6V and recommended operating conditions between 1.425V and 1.575V. Therefore, according to the manufacturer, any transient of amplitude greater than 75 mV can disrupt normal circuit functions, and overvoltages greater than 100 mV may damage the FPGA. We tested five low dropout voltage regulators for SET sensitivity under a large range of circuit application conditions.

Theory and experiment on charging and discharging a capacitor through a reverse-biased diode

NASA Astrophysics Data System (ADS)

Roy, Arijit; Mallick, Abhishek; Adhikari, Aparna; Guin, Priyanka; Chatterjee, Dibyendu

2018-06-01

The beauty of a diode lies in its voltage-dependent nonlinear resistance. The voltage on a charging and discharging capacitor through a reverse-biased diode is calculated from basic equations and is found to be in good agreement with experimental measurements. Instead of the exponential dependence of charging and discharging voltages with time for a resistor-capacitor circuit, a linear time dependence is found when the resistor is replaced by a reverse-biased diode. Thus, well controlled positive and negative ramp voltages are obtained from the charging and discharging diode-capacitor circuits. This experiment can readily be performed in an introductory physics and electronics laboratory.

Console test report for shuttle task 501 shuttle carrier aircraft transceiver console (SED 36115353-301)

NASA Technical Reports Server (NTRS)

Lane, J. H.

1976-01-01

Performance tests completed on the Space Shuttle Carrier Aircraft (SCA) transceiver console, verifying its design objectives, were described. These tests included: (1) check of power supply voltages for correct output voltage and energization at the proper point in the turn on sequence, (2) check of cooling system (LRU blower, overload sensors and circuitry, and thermocouple probe), (3) check of control circuits logic, including the provisions for remote control and display, (4) check of the LRU connector for presence of correct voltages and absence of incorrect voltages under both energized and deenergized conditions, and (5) check of the AGC and power output monitor circuits.

Voltages induced by lightning strokes and ground-faults on a coaxial telecom circuit enclosed inside a composite earthwire. Part II: lightning induced voltages ant composite earthwire tehnical design

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anzanel, P.; Kouteynikoff, P.

1985-02-01

This Part II presents theorical and experimental work about interference generated by lightning strokes in a telecommunication coaxial circuit enclosed inside a composite earthwire for overhead transmission lines. Sinusoidal steady state and surge measurements of the composite earthwire susceptibility to interference (transfer impedance) have been carried out. Induced voltages have been calculated using an original double sampling FFT method whose validity has been checked by measurements on a test line. Finally, it is shown how the cable design can be improved and maximum induced voltage values are given.

High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors.

PubMed

Zhang, Jiawei; Yang, Jia; Li, Yunpeng; Wilson, Joshua; Ma, Xiaochen; Xin, Qian; Song, Aimin

2017-03-21

Oxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO) and p-type tin monoxide (SnO) is presented. The IGZO thin-film transistor (TFT) shows a linear mobility of 11.9 cm²/(V∙s) and a threshold voltage of 12.2 V. The SnO TFT exhibits a mobility of 0.51 cm²/(V∙s) and a threshold voltage of 20.1 V which is suitable for use with IGZO TFTs to form complementary circuits. At a supply voltage of 40 V, the complementary inverter shows a full output voltage swing and a gain of 24 with both TFTs having the same channel length/channel width ratio. The three-stage ring oscillator based on IGZO and SnO is able to operate at 2.63 kHz and the peak-to-peak oscillation amplitude reaches 36.1 V at a supply voltage of 40 V. The oxide-based complementary circuits, after further optimization of the operation voltage, may have wide applications in practical large-area flexible electronics.

High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors

PubMed Central

Zhang, Jiawei; Yang, Jia; Li, Yunpeng; Wilson, Joshua; Ma, Xiaochen; Xin, Qian; Song, Aimin

2017-01-01

Oxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO) and p-type tin monoxide (SnO) is presented. The IGZO thin-film transistor (TFT) shows a linear mobility of 11.9 cm2/(V∙s) and a threshold voltage of 12.2 V. The SnO TFT exhibits a mobility of 0.51 cm2/(V∙s) and a threshold voltage of 20.1 V which is suitable for use with IGZO TFTs to form complementary circuits. At a supply voltage of 40 V, the complementary inverter shows a full output voltage swing and a gain of 24 with both TFTs having the same channel length/channel width ratio. The three-stage ring oscillator based on IGZO and SnO is able to operate at 2.63 kHz and the peak-to-peak oscillation amplitude reaches 36.1 V at a supply voltage of 40 V. The oxide-based complementary circuits, after further optimization of the operation voltage, may have wide applications in practical large-area flexible electronics. PMID:28772679

Photosensitization of ZnO nanowires with CdSe quantum dots for photovoltaic devices.

PubMed

Leschkies, Kurtis S; Divakar, Ramachandran; Basu, Joysurya; Enache-Pommer, Emil; Boercker, Janice E; Carter, C Barry; Kortshagen, Uwe R; Norris, David J; Aydil, Eray S

2007-06-01

We combine CdSe semiconductor nanocrystals (or quantum dots) and single-crystal ZnO nanowires to demonstrate a new type of quantum-dot-sensitized solar cell. An array of ZnO nanowires was grown vertically from a fluorine-doped tin oxide conducting substrate. CdSe quantum dots, capped with mercaptopropionic acid, were attached to the surface of the nanowires. When illuminated with visible light, the excited CdSe quantum dots injected electrons across the quantum dot-nanowire interface. The morphology of the nanowires then provided the photoinjected electrons with a direct electrical pathway to the photoanode. With a liquid electrolyte as the hole transport medium, quantum-dot-sensitized nanowire solar cells exhibited short-circuit currents ranging from 1 to 2 mA/cm2 and open-circuit voltages of 0.5-0.6 V when illuminated with 100 mW/cm2 simulated AM1.5 spectrum. Internal quantum efficiencies as high as 50-60% were also obtained.

76 FR 61288 - Efficiency and Renewables Advisory Committee, Appliance Standards Subcommittee Negotiated...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-10-04

... Medium- and Low-Voltage Dry-Type Distribution Transformers AGENCY: Department of Energy, Office of Energy... Dry-Type Distribution Transformers and the second addressing Low-Voltage Dry-Type Distribution Transformers. The Liquid Immersed and Medium-Voltage Dry-Type Group (MV Group) and the Low-Voltage Dry-Type...

High accuracy digital aging monitor based on PLL-VCO circuit

NASA Astrophysics Data System (ADS)

Yuejun, Zhang; Zhidi, Jiang; Pengjun, Wang; Xuelong, Zhang

2015-01-01

As the manufacturing process is scaled down to the nanoscale, the aging phenomenon significantly affects the reliability and lifetime of integrated circuits. Consequently, the precise measurement of digital CMOS aging is a key aspect of nanoscale aging tolerant circuit design. This paper proposes a high accuracy digital aging monitor using phase-locked loop and voltage-controlled oscillator (PLL-VCO) circuit. The proposed monitor eliminates the circuit self-aging effect for the characteristic of PLL, whose frequency has no relationship with circuit aging phenomenon. The PLL-VCO monitor is implemented in TSMC low power 65 nm CMOS technology, and its area occupies 303.28 × 298.94 μm2. After accelerating aging tests, the experimental results show that PLL-VCO monitor improves accuracy about high temperature by 2.4% and high voltage by 18.7%.

Split-cross-bridge resistor for testing for proper fabrication of integrated circuits

NASA Technical Reports Server (NTRS)

Buehler, M. G. (Inventor)

1985-01-01

An electrical testing structure and method is described whereby a test structure is fabricated on a large scale integrated circuit wafer along with the circuit components and has a van der Pauw cross resistor in conjunction with a bridge resistor and a split bridge resistor, the latter having two channels each a line width wide, corresponding to the line width of the wafer circuit components, and with the two channels separated by a space equal to the line spacing of the wafer circuit components. The testing structure has associated voltage and current contact pads arranged in a two by four array for conveniently passing currents through the test structure and measuring voltages at appropriate points to calculate the sheet resistance, line width, line spacing, and line pitch of the circuit components on the wafer electrically.

Three-Function Logic Gate Controlled by Analog Voltage

NASA Technical Reports Server (NTRS)

Zebulum, Ricardo; Stoica, Adrian

2006-01-01

The figure is a schematic diagram of a complementary metal oxide/semiconductor (CMOS) electronic circuit that performs one of three different logic functions, depending on the level of an externally applied control voltage, V(sub sel). Specifically, the circuit acts as A NAND gate at V(sub sel) = 0.0 V, A wire (the output equals one of the inputs) at V(sub sel) = 1.0 V, or An AND gate at V(sub sel) = -1.8 V. [The nominal power-supply potential (VDD) and logic "1" potential of this circuit is 1.8 V.] Like other multifunctional circuits described in several prior NASA Tech Briefs articles, this circuit was synthesized following an automated evolutionary approach that is so named because it is modeled partly after the repetitive trial-and-error process of biological evolution. An evolved circuit can be tested by computational simulation and/or tested in real hardware, and the results of the test can provide guidance for refining the design through further iteration. The evolutionary synthesis of electronic circuits can now be implemented by means of a software package Genetic Algorithms for Circuit Synthesis (GACS) that was developed specifically for this purpose. GACS was used to synthesize the present trifunctional circuit. As in the cases of other multifunctional circuits described in several prior NASA Tech Briefs articles, the multiple functionality of this circuit, the use of a single control voltage to select the function, and the automated evolutionary approach to synthesis all contribute synergistically to a combination of features that are potentially advantageous for the further development of robust, multiple-function logic circuits, including, especially, field-programmable gate arrays (FPGAs). These advantages include the following: This circuit contains only 9 transistors about half the number of transistors that would be needed to obtain equivalent NAND/wire/AND functionality by use of components from a standard digital design library. If multifunctional gates like this circuit were used in the place of the configurable logic blocks of present commercial FPGAs, it would be possible to change the functions of the resulting digital systems within shorter times. For example, by changing a single control voltage, one could change the function of thousands of FPGA cells within nanoseconds. In contrast, typically, the reconfiguration in a conventional FPGA by use of bits downloaded from look-up tables via a digital bus takes microseconds.

Study of current-mode active pixel sensor circuits using amorphous InSnZnO thin-film transistor for 50-μm pixel-pitch indirect X-ray imagers

NASA Astrophysics Data System (ADS)

Cheng, Mao-Hsun; Zhao, Chumin; Kanicki, Jerzy

2017-05-01

Current-mode active pixel sensor (C-APS) circuits based on amorphous indium-tin-zinc-oxide thin-film transistors (a-ITZO TFTs) are proposed for indirect X-ray imagers. The proposed C-APS circuits include a combination of a hydrogenated amorphous silicon (a-Si:H) p+-i-n+ photodiode (PD) and a-ITZO TFTs. Source-output (SO) and drain-output (DO) C-APS are investigated and compared. Acceptable signal linearity and high gains are realized for SO C-APS. APS circuit characteristics including voltage gain, charge gain, signal linearity, charge-to-current conversion gain, electron-to-voltage conversion gain are evaluated. The impact of the a-ITZO TFT threshold voltage shifts on C-APS is also considered. A layout for a pixel pitch of 50 μm and an associated fabrication process are suggested. Data line loadings for 4k-resolution X-ray imagers are computed and their impact on circuit performances is taken into consideration. Noise analysis is performed, showing a total input-referred noise of 239 e-.

Bio-inspired feedback-circuit implementation of discrete, free energy optimizing, winner-take-all computations.

PubMed

Genewein, Tim; Braun, Daniel A

2016-06-01

Bayesian inference and bounded rational decision-making require the accumulation of evidence or utility, respectively, to transform a prior belief or strategy into a posterior probability distribution over hypotheses or actions. Crucially, this process cannot be simply realized by independent integrators, since the different hypotheses and actions also compete with each other. In continuous time, this competitive integration process can be described by a special case of the replicator equation. Here we investigate simple analog electric circuits that implement the underlying differential equation under the constraint that we only permit a limited set of building blocks that we regard as biologically interpretable, such as capacitors, resistors, voltage-dependent conductances and voltage- or current-controlled current and voltage sources. The appeal of these circuits is that they intrinsically perform normalization without requiring an explicit divisive normalization. However, even in idealized simulations, we find that these circuits are very sensitive to internal noise as they accumulate error over time. We discuss in how far neural circuits could implement these operations that might provide a generic competitive principle underlying both perception and action.

Mitigating energy loss on distribution lines through the allocation of reactors

NASA Astrophysics Data System (ADS)

Miranda, T. M.; Romero, F.; Meffe, A.; Castilho Neto, J.; Abe, L. F. T.; Corradi, F. E.

2018-03-01

This paper presents a methodology for automatic reactors allocation on medium voltage distribution lines to reduce energy loss. In Brazil, some feeders are distinguished by their long lengths and very low load, which results in a high influence of the capacitance of the line on the circuit’s performance, requiring compensation through the installation of reactors. The automatic allocation is accomplished using an optimization meta-heuristic called Global Neighbourhood Algorithm. Given a set of reactor models and a circuit, it outputs an optimal solution in terms of reduction of energy loss. The algorithm is also able to verify if the voltage limits determined by the user are not being violated, besides checking for energy quality. The methodology was implemented in a software tool, which can also show the allocation graphically. A simulation with four real feeders is presented in the paper. The obtained results were able to reduce the energy loss significantly, from 50.56%, in the worst case, to 93.10%, in the best case.

Experimental prototype of an electric elevator

NASA Astrophysics Data System (ADS)

Gaiceanu, M.; Epure, S.; Ciuta, S.

2016-08-01

The main objective is to achieve an elevator prototype powered by a three-phase voltage system via a bidirectional static power converter ac-ac with regenerating capability. In order to diminish the power size of the electric motor up to 1/3 of rated power, the elevator contains two carriages of the same weight, one serving as the payload, and the other as counterweight. Before proper operation of the static power converter, the capacitor must be charged at rated voltage via a precharge circuit. At the moment of stabilizing the DC voltage at nominal value, the AC-AC power converter can operates in the proper limits. The functions of the control structure are: the load control task, speed and torque controls. System includes transducers for current measuring, voltage sensors and encoder. As reserve power sources the hybrid battery-photovoltaic panels are used. The control voltage is modulated by implementing four types of pulse width modulations: sinusoidal, with reduced commutation, third order harmonic insertion, and the space vector modulation. Therefore, the prototype could operates with an increased efficiency, in spite of the existing ones. The experimental results confirm the well design of the chosen solution. The control solution assures bidirectional power flow control, precharge control, and load control and it is implemented on a digital signal processor. The elevator capacity is between 300-450 kg, and it is driven by using a 1.5 kW three-phase asynchronous machine.

Single-phase frequency converter

NASA Astrophysics Data System (ADS)

Baciu, I.; Cunţan, C. D.

2017-01-01

The paper presents a continuous voltage inverter - AC (12V / 230V) made with IGBT and two-stage voltage transformer. The sequence control transistors is achieved using a ring counter whose clock signal is obtained with a monostable circuit LM 555. The frequency of the clock signal can be adjustment with a potentiometer that modifies the charging current of the capacitor which causes constant monostable circuit time. Command sequence consists of 8 intervals of which 6 are assigned to command four transistors and two for the period break at the beginning and end of the sequence control. To obtain an alternation consisting of two different voltage level, two transistors will be comanded, connected to different windings of the transformer and the one connected to the winding providing lower voltage must be comanded twice. The output of the numerator goes through an inverter type MOS and a current amplifier with bipolar transistor.To achieve galvanic separation, an optocoupler will be used for each IGBT transistor, while protection is achieved with resistance and diode circuit. At the end there is connected an LC filter for smoothing voltage variations.

Voltage regulator/amplifier is self-regulated

NASA Technical Reports Server (NTRS)

Day, W. E.; Phillips, D. E.

1967-01-01

Signal modulated, self-regulating voltage regulator/amplifier controls the output b-plus voltage in modulated regulator systems. It uses self-oscillation with feedback to a control circuit with a discontinuous amplitude action feedback loop.

RF power harvesting: a review on designing methodologies and applications

NASA Astrophysics Data System (ADS)

Tran, Le-Giang; Cha, Hyouk-Kyu; Park, Woo-Tae

2017-12-01

Wireless power transmission was conceptualized nearly a century ago. Certain achievements made to date have made power harvesting a reality, capable of providing alternative sources of energy. This review provides a summ ary of radio frequency (RF) power harvesting technologies in order to serve as a guide for the design of RF energy harvesting units. Since energy harvesting circuits are designed to operate with relatively small voltages and currents, they rely on state-of-the-art electrical technology for obtaining high efficiency. Thus, comprehensive analysis and discussions of various designs and their tradeoffs are included. Finally, recent applications of RF power harvesting are outlined.

Mechanism of Electrochemical Delamination of Two-Dimensional Materials from Their Native Substrates by Bubbling

PubMed Central

Sun, Jie; Fan, Xing; Guo, Weiling; Liu, Lihui; Liu, Xin; Deng, Jun; Xu, Chen

2015-01-01

A capacitor-based circuit model is proposed to explain the electrochemical delamination of two-dimensional materials from their native substrates where produced gas bubbles squeeze into the interface. The delamination is actually the electric breakdown of the capacitor formed between the solution and substrate. To facilitate the procedure, the backside of the ubstrate has to be shielded so that the capacitor breakdown voltage can be reached. The screening effect can be induced either by nonreactive ions around the electrode or, more effectively, by an undetachable insulator. This mechanism serves as a guideline for the surface science and applications involving the bubbling delamination. PMID:26694406

Mechanism of Electrochemical Delamination of Two-Dimensional Materials from Their Native Substrates by Bubbling.

PubMed

Sun, Jie; Fan, Xing; Guo, Weiling; Liu, Lihui; Liu, Xin; Deng, Jun; Xu, Chen

2015-12-16

A capacitor-based circuit model is proposed to explain the electrochemical delamination of two-dimensional materials from their native substrates where produced gas bubbles squeeze into the interface. The delamination is actually the electric breakdown of the capacitor formed between the solution and substrate. To facilitate the procedure, the backside of the ubstrate has to be shielded so that the capacitor breakdown voltage can be reached. The screening effect can be induced either by nonreactive ions around the electrode or, more effectively, by an undetachable insulator. This mechanism serves as a guideline for the surface science and applications involving the bubbling delamination.

New PMOS LTPS TFT pixel for AMOLED to suppress the hysteresis effect on OLED current by employing a reset voltage driving

NASA Astrophysics Data System (ADS)

Lee, Jae-Hoon; Park, Sang-Geun; Han, Sang-Myeon; Han, Min-Koo; Park, Kee-Chan

2008-03-01

New PMOS LTPS (low temperature polycrystalline silicon)-thin film transistor (TFT) pixel circuit, which can suppress an OLED current error caused by the hysteresis of LTPS-TFT for active matrix organic light emitting diode (AMOLED) display, is proposed and fabricated. The proposed pixel circuit employs a reset voltage driving so that the sweep direction of gate voltage in the current driving TFT is not altered by the gate voltage in the previous frame. Our experimental results show that OLED current error of the proposed pixel is successfully suppressed because a reset voltage can enable the starting gate voltage for a desired one not to be varied, while that of the conventional 2-TFT pixel exceeds over 15% due to the hysteresis of LTPS-TFT.

Sequential power-up circuit

DOEpatents

Kronberg, J.W.

1992-06-02

A sequential power-up circuit for starting several electrical load elements in series to avoid excessive current surge, comprising a voltage ramp generator and a set of voltage comparators, each comparator having a different reference voltage and interfacing with a switch that is capable of turning on one of the load elements. As the voltage rises, it passes the reference voltages one at a time and causes the switch corresponding to that voltage to turn on its load element. The ramp is turned on and off by a single switch or by a logic-level electrical signal. The ramp rate for turning on the load element is relatively slow and the rate for turning the elements off is relatively fast. Optionally, the duration of each interval of time between the turning on of the load elements is programmable. 2 figs.

Compensated gain control circuit for buck regulator command charge circuit

DOEpatents

Barrett, David M.

1996-01-01

A buck regulator command charge circuit includes a compensated-gain control signal for compensating for changes in the component values in order to achieve optimal voltage regulation. The compensated-gain control circuit includes an automatic-gain control circuit for generating a variable-gain control signal. The automatic-gain control circuit is formed of a precision rectifier circuit, a filter network, an error amplifier, and an integrator circuit.

Compensated gain control circuit for buck regulator command charge circuit

DOEpatents

Barrett, D.M.

1996-11-05

A buck regulator command charge circuit includes a compensated-gain control signal for compensating for changes in the component values in order to achieve optimal voltage regulation. The compensated-gain control circuit includes an automatic-gain control circuit for generating a variable-gain control signal. The automatic-gain control circuit is formed of a precision rectifier circuit, a filter network, an error amplifier, and an integrator circuit. 5 figs.

30 CFR 77.800-1 - Testing, examination, and maintenance of circuit breakers; procedures.

Code of Federal Regulations, 2010 CFR

2010-07-01

..., examination, and maintenance of circuit breakers; procedures. (a) Circuit breakers and their auxiliary devices protecting high-voltage circuits to portable or mobile equipment shall be tested and examined at least once... circuit breaker and its auxiliary devices, and such repairs or adjustments as are indicated by such tests...

Pulsed corona generation using a diode-based pulsed power generator

NASA Astrophysics Data System (ADS)

Pemen, A. J. M.; Grekhov, I. V.; van Heesch, E. J. M.; Yan, K.; Nair, S. A.; Korotkov, S. V.

2003-10-01

Pulsed plasma techniques serve a wide range of unconventional processes, such as gas and water processing, hydrogen production, and nanotechnology. Extending research on promising applications, such as pulsed corona processing, depends to a great extent on the availability of reliable, efficient and repetitive high-voltage pulsed power technology. Heavy-duty opening switches are the most critical components in high-voltage pulsed power systems with inductive energy storage. At the Ioffe Institute, an unconventional switching mechanism has been found, based on the fast recovery process in a diode. This article discusses the application of such a "drift-step-recovery-diode" for pulsed corona plasma generation. The principle of the diode-based nanosecond high-voltage generator will be discussed. The generator will be coupled to a corona reactor via a transmission-line transformer. The advantages of this concept, such as easy voltage transformation, load matching, switch protection and easy coupling with a dc bias voltage, will be discussed. The developed circuit is tested at both a resistive load and various corona reactors. Methods to optimize the energy transfer to a corona reactor have been evaluated. The impedance matching between the pulse generator and corona reactor can be significantly improved by using a dc bias voltage. At good matching, the corona energy increases and less energy reflects back to the generator. Matching can also be slightly improved by increasing the temperature in the corona reactor. More effective is to reduce the reactor pressure.

Controllable pulse parameter transcranial magnetic stimulator with enhanced circuit topology and pulse shaping

NASA Astrophysics Data System (ADS)

Peterchev, Angel V.; DʼOstilio, Kevin; Rothwell, John C.; Murphy, David L.

2014-10-01

Objective. This work aims at flexible and practical pulse parameter control in transcranial magnetic stimulation (TMS), which is currently very limited in commercial devices. Approach. We present a third generation controllable pulse parameter device (cTMS3) that uses a novel circuit topology with two energy-storage capacitors. It incorporates several implementation and functionality advantages over conventional TMS devices and other devices with advanced pulse shape control. cTMS3 generates lower internal voltage differences and is implemented with transistors with a lower voltage rating than prior cTMS devices. Main results. cTMS3 provides more flexible pulse shaping since the circuit topology allows four coil-voltage levels during a pulse, including approximately zero voltage. The near-zero coil voltage enables snubbing of the ringing at the end of the pulse without the need for a separate active snubber circuit. cTMS3 can generate powerful rapid pulse sequences (\\lt 10 ms inter pulse interval) by increasing the width of each subsequent pulse and utilizing the large capacitor energy storage, allowing the implementation of paradigms such as paired-pulse and quadripulse TMS with a single pulse generation circuit. cTMS3 can also generate theta (50 Hz) burst stimulation with predominantly unidirectional electric field pulses. The cTMS3 device functionality and output strength are illustrated with electrical output measurements as well as a study of the effect of pulse width and polarity on the active motor threshold in ten healthy volunteers. Significance. The cTMS3 features could extend the utility of TMS as a research, diagnostic, and therapeutic tool.

Controllable pulse parameter transcranial magnetic stimulator with enhanced circuit topology and pulse shaping

PubMed Central

D’Ostilio, Kevin; Rothwell, John C; Murphy, David L

2014-01-01

Objective This work aims at flexible and practical pulse parameter control in transcranial magnetic stimulation (TMS), which is currently very limited in commercial devices. Approach We present a third generation controllable pulse parameter device (cTMS3) that uses a novel circuit topology with two energy-storage capacitors. It incorporates several implementation and functionality advantages over conventional TMS devices and other devices with advanced pulse shape control. cTMS3 generates lower internal voltage differences and is implemented with transistors with lower voltage rating than prior cTMS devices. Main results cTMS3 provides more flexible pulse shaping since the circuit topology allows four coil-voltage levels during a pulse, including approximately zero voltage. The near-zero coil voltage enables snubbing of the ringing at the end of the pulse without the need for a separate active snubber circuit. cTMS3 can generate powerful rapid pulse sequences (<10 ms inter pulse interval) by increasing the width of each subsequent pulse and utilizing the large capacitor energy storage, allowing the implementation of paradigms such as paired-pulse and quadripulse TMS with a single pulse generation circuit. cTMS3 can also generate theta (50 Hz) burst stimulation with predominantly unidirectional electric field pulses. The cTMS3 device functionality and output strength are illustrated with electrical output measurements as well as a study of the effect of pulse width and polarity on the active motor threshold in 10 healthy volunteers. Significance The cTMS3 features could extend the utility of TMS as a research, diagnostic, and therapeutic tool. PMID:25242286

Relationship of Open-Circuit Voltage to CdTe Hole Concentration and Lifetime

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duenow, Joel N.; Burst, James M.; Albin, David S.

We investigate the correlation of bulk CdTe and CdZnTe material properties with experimental open-circuit voltage (Voc) through fabrication and characterization of diverse single-crystal solar cells with different dopants. Several distinct crystal types reach Voc >900 mV. Correlations are in general agreement with Voc limits modeled from bulk minority-carrier lifetime and hole concentration.

Transmission line pulse system for avalanche characterization of high power semiconductor devices

NASA Astrophysics Data System (ADS)

Riccio, Michele; Ascione, Giovanni; De Falco, Giuseppe; Maresca, Luca; De Laurentis, Martina; Irace, Andrea; Breglio, Giovanni

2013-05-01

Because of the increasing in power density of electronic devices for medium and high power application, reliabilty of these devices is of great interest. Understanding the avalanche behaviour of a power device has become very important in these last years because it gives an indication of the maximum energy ratings which can be seen as an index of the device ruggedness. A good description of this behaviour is given by the static IV blocking characteristc. In order to avoid self heating, very relevant in high power devices, very short pulses of current have to be used, whose value can change from few milliamps up to tens of amps. The most used method to generate short pulses is the TLP (Transmission Line Pulse) test, which is based on charging the equivalent capacitance of a transmission line to high value of voltage and subsequently discharging it onto a load. This circuit let to obtain very short square pulses but it is mostly used for evaluate the ESD capability of semiconductor and, in this environment, it generates pulses of low amplitude which are not high enough to characterize the avalanche behaviour of high power devices . Advanced TLP circuit able to generate high current are usually very expensive and often suffer of distorption of the output pulse. In this article is proposed a simple, low cost circuit, based on a boosted-TLP configuration, which is capable to produce very square pulses of about one hundreds of nanosecond with amplitude up to some tens of amps. A prototype is implemented which can produce pulses up to 20A of amplitude with 200 ns of duration which can characterize power devices up to 1600V of breakdown voltage. Usage of microcontroller based logic make the circuit very flexible. Results of SPICE simulation are provided, together with experimental results. To prove the effectiveness of the circuit, the I-V blocking characteristics of two commercial devices, namely a 600V PowerMOS and a 1200V Trench-IGBT, are measured at different operating temperature.

Developing and Evaluating a Flexible Wireless Microcoil Array Based Integrated Interface for Epidural Cortical Stimulation.

PubMed

Wang, Xing; Chaudhry, Sharjeel A; Hou, Wensheng; Jia, Xiaofeng

2017-02-05

Stroke leads to serious long-term disability. Electrical epidural cortical stimulation has made significant improvements in stroke rehabilitation therapy. We developed a preliminary wireless implantable passive interface, which consists of a stimulating surface electrode, receiving coil, and single flexible passive demodulated circuit printed by flexible printed circuit (FPC) technique and output pulse voltage stimulus by inductively coupling an external circuit. The wireless implantable board was implanted in cats' unilateral epidural space for electrical stimulation of the primary visual cortex (V1) while the evoked responses were recorded on the contralateral V1 using a needle electrode. The wireless implantable board output stable monophasic voltage stimuli. The amplitude of the monophasic voltage output could be adjusted by controlling the voltage of the transmitter circuit within a range of 5-20 V. In acute experiment, cortico-cortical evoked potential (CCEP) response was recorded on the contralateral V1. The amplitude of N2 in CCEP was modulated by adjusting the stimulation intensity of the wireless interface. These results demonstrated that a wireless interface based on a microcoil array can offer a valuable tool for researchers to explore electrical stimulation in research and the dura mater-electrode interface can effectively transmit electrical stimulation.

Static Characteristics of the Ferroelectric Transistor Inverter

NASA Technical Reports Server (NTRS)

Mitchell, Cody; Laws, crystal; MacLeond, Todd C.; Ho, Fat D.

2010-01-01

The inverter is one of the most fundamental building blocks of digital logic, and it can be used as the foundation for understanding more complex logic gates and circuits. This paper presents the characteristics of an inverter circuit using a ferroelectric field-effect transistor. The voltage transfer characteristics are analyzed with respect to varying parameters such as supply voltage, input voltage, and load resistance. The effects of the ferroelectric layer between the gate and semiconductor are examined, and comparisons are made between the inverters using ferroelectric transistors and those using traditional MOSFETs.

Elevated voltage level I{sub DDQ} failure testing of integrated circuits

DOEpatents

Righter, A.W.

1996-05-21

Burn in testing of static CMOS IC`s is eliminated by I{sub DDQ} testing at elevated voltage levels. These voltage levels are at least 25% higher than the normal operating voltage for the IC but are below voltage levels that would cause damage to the chip. 4 figs.

Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage.

PubMed

Kang, Dong-Ho; Choi, Woo-Young; Woo, Hyunsuk; Jang, Sungkyu; Park, Hyung-Youl; Shim, Jaewoo; Choi, Jae-Woong; Kim, Sungho; Jeon, Sanghun; Lee, Sungjoo; Park, Jin-Hong

2017-08-16

In this study, we demonstrate a high-performance solid polymer electrolyte (SPE) atomic switching device with low SET/RESET voltages (0.25 and -0.5 V, respectively), high on/off-current ratio (10 5 ), excellent cyclic endurance (>10 3 ), and long retention time (>10 4 s), where poly-4-vinylphenol (PVP)/poly(melamine-co-formaldehyde) (PMF) is used as an SPE layer. To accomplish these excellent device performance parameters, we reduce the off-current level of the PVP/PMF atomic switching device by improving the electrical insulating property of the PVP/PMF electrolyte through adjustment of the number of cross-linked chains. We then apply a titanium buffer layer to the PVP/PMF switching device for further improvement of bipolar switching behavior and device stability. In addition, we first implement SPE atomic switch-based logic AND and OR circuits with low operating voltages below 2 V by integrating 5 × 5 arrays of PVP/PMF switching devices on the flexible substrate. In particular, this low operating voltage of our logic circuits was much lower than that (>5 V) of the circuits configured by polymer resistive random access memory. This research successfully presents the feasibility of PVP/PMF atomic switches for flexible integrated circuits for next-generation electronic applications.