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Sample records for metal oxide heterostructure

  1. Observation of complete space-charge-limited transport in metal-oxide-graphene heterostructure

    SciTech Connect

    Chen, Wei; Wang, Fei; Fang, Jingyue; Wang, Guang; Qin, Shiqiao; Zhang, Xue-Ao E-mail: xazhang@nudt.edu.cn; Wang, Chaocheng; Wang, Li E-mail: xazhang@nudt.edu.cn

    2015-01-12

    The metal-oxide-graphene heterostructures have abundant physical connotations. As one of the most important physical properties, the electric transport property of the gold-chromium oxide-graphene heterostructure has been studied. The experimental measurement shows that the conductive mechanism is dominated by the space-charge-limited transport, a kind of bulk transport of an insulator with charge traps. Combining the theoretical analysis, some key parameters such as the carrier mobility and trap energy also are obtained. The study of the characteristics of the metal-oxide-graphene heterostructures is helpful to investigate the graphene-based electronic and photoelectric devices.

  2. Observation of complete space-charge-limited transport in metal-oxide-graphene heterostructure

    NASA Astrophysics Data System (ADS)

    Chen, Wei; Wang, Fei; Qin, Shiqiao; Fang, Jingyue; Wang, Chaocheng; Wang, Guang; Wang, Li; Zhang, Xue-Ao

    2015-01-01

    The metal-oxide-graphene heterostructures have abundant physical connotations. As one of the most important physical properties, the electric transport property of the gold-chromium oxide-graphene heterostructure has been studied. The experimental measurement shows that the conductive mechanism is dominated by the space-charge-limited transport, a kind of bulk transport of an insulator with charge traps. Combining the theoretical analysis, some key parameters such as the carrier mobility and trap energy also are obtained. The study of the characteristics of the metal-oxide-graphene heterostructures is helpful to investigate the graphene-based electronic and photoelectric devices.

  3. Coupled molecular-dynamics and first-principle transport calculations of metal/oxide/metal heterostructures

    NASA Astrophysics Data System (ADS)

    Zapol, Peter; Karpeyev, Dmitry; Maheshwari, Ketan; Zhong, Xiaoliang; Narayanan, Badri; Sankaranarayanan, Subramanian; Wilde, Michael; Heinonen, Olle; Rungger, Ivan

    2015-03-01

    The electronic conduction in Hf-oxide heterostructures for use in, e.g., resistive switching devices, depends sensitively on local oxygen stoichiometry and interactions at interfaces with metal electrodes. In order to model the electronic structure of different disordered configurations near interfaces, we have combined molecular dynamics (MD) simulations with first-principle based non-equilibrium Green's functions (NEGF) methods, including self-interaction corrections. We have developed an approach to generating automated workflows that combine MD and NEGF computations over many parameter values using the Swift parallel scripting language. A sequence of software tools transforms the result of one calculation into the input of the next allowing for a high-throughput concurrent parameter sweep. MD simulations generate systems with quenched disorder, which are then directly fed to NEGF and on to postprocessing. Different computations can be run on different computer platforms matching the computational load to the hardware resources. We will demonstrate results for metal-HfO2-metal heterostructures obtained using this workflow. Argonne National Laboratory's work was supported under U.S. Department of Energy Contract DE-AC02-06CH11357.

  4. LETTER TO THE EDITOR: Efficient photocarrier injection in a transition metal oxide heterostructure

    NASA Astrophysics Data System (ADS)

    Muraoka, Y.; Yamauchi, T.; Ueda, Y.; Hiroi, Z.

    2002-12-01

    An efficient method for doping a transition metal oxide (TMO) with hole carriers is presented: photocarrier injection (PCI) in an oxide heterostructure. It is shown that an insulating vanadium dioxide (VO2) film is rendered metallic under light irradiation by PCI from an n-type titanium dioxide (TiO2) substrate doped with Nb. Consequently, a large photoconductivity, which is exceptional for TMOs, is found in the VO2/TiO2:Nb heterostructure. We propose an electronic band structure where photoinduced holes created in TiO2:Nb can be transferred into the filled V 3d band via the low-lying O 2p band of VO2.

  5. Topological phases in oxide heterostructures with light and heavy transition metal ions (invited)

    SciTech Connect

    Fiete, Gregory A.; Rüegg, Andreas

    2015-05-07

    Using a combination of density functional theory, tight-binding models, and Hartree-Fock theory, we predict topological phases with and without time-reversal symmetry breaking in oxide heterostructures. We consider both heterostructures containing light transition metal ions and those containing heavy transition metal ions. We find that the (111) growth direction naturally leads to favorable conditions for topological phases in both perovskite structures and pyrochlore structures. For the case of light transition metal elements, Hartree-Fock theory predicts the spin-orbit coupling is effectively enhanced by on-site multiple-orbital interactions and may drive the system through a topological phase transition, while heavy elements with intrinsically large spin-orbit coupling require much weaker or even vanishing electron interactions to bring about a topological phase.

  6. Interfacial interaction in monolayer transition metal dichalcogenide/metal oxide heterostructures and its effects on electronic and optical properties: The case of MX2/CeO2

    NASA Astrophysics Data System (ADS)

    Yang, Ke; Huang, Wei-Qing; Hu, Wangyu; Huang, Gui-Fang; Wen, Shuangchun

    2017-01-01

    Using the density functional theory (DFT), we systematically study the interfacial interaction in monolayer MX2 (M = Mo, W; X = S, Se)/CeO2 heterostructures and its effects on electronic and optical properties. The interfacial interaction in the MX2/CeO2 heterostructures depends largely on chalcogens, and its strength determines the band gap variation and important electronic states at the band edges of the heterostructures. The MX2/CeO2 heterostructures with the same chalcogen have similar absorption spectra, from ultraviolet to near-infrared regions. These results suggest that chalcogens importantly determine the properties of MX2/metal oxide heterostructures.

  7. High performance supercapacitor electrodes based on metal/metal-oxide core/shell nano-heterostructures

    NASA Astrophysics Data System (ADS)

    Singh, Ashutosh Kumar; Mandal, Kalyan

    2015-06-01

    This study demonstrates the fabrication technique of novel nano-heterostructures (NHs) and their comparative study of electrochemical performance as supercapacitor electrodes. The fabricated Ni/NiO core/shell and Co-Ni/Co3O4-NiO core/shell nano-heterostructures supercapacitor electrodes offer the desired properties of macroporosity to allow facile electrolyte flow, thereby reducing device resistance and nanoporosity with large surface area to allow faster reaction kinetics. In three electrode configuration, Ni/NiO core/shell and Co-Ni/Co3O4-NiO core/shell nano-heterostructures supercapacitor electrodes exhibited specific capacitance values (731 and 2013 F g-1, respectively, at a constant current density of 2.5 A g-1), high energy (36.5 and 44.7 Wh kg-1, respectively), power density (7.5 and 5.6 kW kg-1, respectively), good capacitance retention and long cyclicality. The remarkable electrochemical property of the large surface area nano-heterostructures is demonstrated based on the effective nano-architectural design of the electrode with the coexistence of the highly redox active materials at the surface supported by highly conducting metal channel at the core for faster charge transport.

  8. Origin of fieldlike spin-orbit torques in heavy metal/ferromagnet/oxide thin film heterostructures

    NASA Astrophysics Data System (ADS)

    Ou, Yongxi; Pai, Chi-Feng; Shi, Shengjie; Ralph, D. C.; Buhrman, R. A.

    2016-10-01

    We report measurements of the thickness and temperature (T ) dependencies of current-induced spin-orbit torques, especially the fieldlike (FL) component, in various heavy metal (HM)/normal metal (NM) spacer/ferromagnet (FM)/oxide (MgO and Hf Ox/MgO ) heterostructures. The FL torque in these samples originates from spin current generated by the spin Hall effect in the HM. For a FM layer sufficiently thin that a substantial portion of this spin current can reach the FM/oxide interface, T-dependent spin scattering there can yield a strong FL torque that is, in some cases, opposite in sign to that exerted at the NM/FM interface.

  9. Spintronic effects in metallic, semiconductor, metal oxide and metal semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Bratkovsky, A. M.

    2008-02-01

    Spintronics is a rapidly growing field focusing on phenomena and related devices essentially dependent on spin transport. Some of them are already an established part of microelectronics. We review recent theoretical and experimental advances in achieving large spin injection efficiency (polarization of current) and accumulated spin polarization. These include tunnel and giant magnetoresistance, spin-torque and spin-orbit effects on electron transport in various heterostructures. We give a microscopic description of spin tunneling through oxide and modified Schottky barriers between a ferromagnet (FM) and a semiconductor (S). It is shown that in such FM-S junctions electrons with a certain spin projection can be efficiently injected into (or extracted from) S, while electrons with the opposite spin can accumulate in S near the interface. The criterion for efficient injection is opposite to a known Rashba criterion, since the barrier should be rather transparent. In degenerate semiconductors, extraction of spin can proceed at low temperatures. We mention a few novel spin-valve ultrafast devices with small dissipated power: a magnetic sensor, a spin transistor, an amplifier, a frequency multiplier, a square-law detector and a source of polarized radiation. We also discuss effects related to spin-orbital interactions, such as the spin Hall effect (SHE) and a recently predicted positive magnetoresistance accompanying SHE. Some esoteric devices such as 'spinFET', interacting spin logic and spin-based quantum computing are discussed and problems with their realization are highlighted. We demonstrate that the so-called 'ferroelectric tunnel junctions' are unlikely to provide additional functionality because in all realistic situations the ferroelectric barrier would be split into domains by the depolarizing field.

  10. Research Update: Magnetoionic control of magnetization and anisotropy in layered oxide/metal heterostructures

    NASA Astrophysics Data System (ADS)

    Duschek, K.; Pohl, D.; Fähler, S.; Nielsch, K.; Leistner, K.

    2016-03-01

    Electric field control of magnetization and anisotropy in layered structures with perpendicular magnetic anisotropy is expected to increase the versatility of spintronic devices. As a model system for reversible voltage induced changes of magnetism by magnetoionic effects, we present several oxide/metal heterostructures polarized in an electrolyte. Room temperature magnetization of Fe-O/Fe layers can be changed by 64% when applying only a few volts in 1M KOH. In a next step, the bottom interface of the in-plane magnetized Fe layer is functionalized by an L10 FePt(001) underlayer exhibiting perpendicular magnetic anisotropy. During subsequent electrocrystallization and electrooxidation, well defined epitaxial Fe3O4/Fe/FePt heterostructures evolve. The application of different voltages leads to a thickness change of the Fe layer sandwiched between Fe-O and FePt. At the point of transition between rigid magnet and exchange spring magnet regime for the Fe/FePt bilayer, this induces a large variation of magnetic anisotropy.

  11. Tuning interfacial exchange interactions via electronic reconstruction in transition-metal oxide heterostructures

    SciTech Connect

    Li, Binzhi; Chopdekar, Rajesh V.; N'Diaye, Alpha T.; Mehta, Apurva; Byers, J. Paige; Browning, Nigel D.; Arenholz, Elke; Takamura, Yayoi

    2016-10-10

    The impact of interfacial electronic reconstruction on the magnetic characteristics of La0.7Sr0.3CoO3 (LSCO)/La0.7Sr0.3MnO3 (LSMO) superlattices was investigated as a function of layer thickness using a combination of soft x-ray magnetic spectroscopy and bulk magnetometry. We found that the magnetic properties of the LSCO layers are impacted by two competing electronic interactions occurring at the LSCO/substrate and LSMO/LSCO interfaces. For thin LSCO layers (< 5 nm), the heterostructures exist in a highly coupled state where the chemically distinct layers behave as a single magnetic compound with magnetically active Co2+ ions. As the LSCO thickness increases, a high coercivity LSCO layer develops which biases a low coercivity layer, which is composed not only of the LSMO layer, but also an interfacial LSCO layer. These results suggest a new route to tune the magnetic properties of transition metal oxide heterostructures through careful control of the interface structure.

  12. Oxides Heterostructures for Nanoelectronics

    SciTech Connect

    C Dubourdieu; I Gelard; O Salicio; G Saint-Girons; B Vilquin; G Hollinger

    2011-12-31

    We summarise in this paper the work of two groups focusing on the synthesis and characterisation of functional oxide for nanoelectronic applications. In the first section, we discuss the growth by liquid-injection MOCVD of oxides heterostructures. Interface engineering for the minimisation of silicate formation during the growth of polycrystalline SrTiO{sub 3} on Si is first presented. It is realised via the change of reactant flow or chemical nature at the Si surface. We then report on the epitaxy on oxide substrates of manganites films and superlattices and on their magnetic and electrical properties. La{sub 0.7}Sr{sub 0.3}MnO{sub 3} and La{sub 0.8}MnO{sub 3-{delta}} as well as multiferroic hexagonal ReMnO{sub 3} manganites are considered. We show that the film thickness and related strain may be used to tune the properties. Finally, we demonstrate the growth of MgO nanowires by CVD at a moderate temperature of 600 C, using gold as a catalyst. In the second section, we discuss the growth of epitaxial oxide heterostructures by MBE. First, the direct epitaxy of SrTiO{sub 3} on Si is considered. Issues and control of the SrTiO{sub 3}/Si interface are discussed. An abrupt interface is achieved. We show that SrTiO{sub 3} on Si can be used as a buffer layer for the epitaxy of various perovskite oxides such as LaAlO{sub 3} or La{sub 0.7}Sr0.3MnO{sub 3}. La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films are ferromagnetic and metallic at room temperature. The epitaxial growth of complex oxides on Si wafers opens up the route to the integration of a wide variety of functionalities in nanoelectronics. Finally, we discuss the monolithic integration of III-V compounds such as InP on Si using epitaxial SrTiO{sub 3} buffer layers for the future integration of optics on Si.

  13. Probing the structural flexibility of MOFs by constructing metal oxide@MOF-based heterostructures for size-selective photoelectrochemical response

    NASA Astrophysics Data System (ADS)

    Zhan, Wenwen; He, Yue; Guo, Jiangbin; Chen, Luning; Kong, Xiangjian; Zhao, Haixia; Kuang, Qin; Xie, Zhaoxiong; Zheng, Lansun

    2016-07-01

    It is becoming a challenge to achieve simpler characterization and wider application of flexible metal organic frameworks (MOFs) exhibiting the gate-opening or breathing behavior. Herein, we designed an intelligent MOF-based system where the gate-opening or breathing behavior of MOFs can be facially visualized in solution. Two types of metal oxide@MOF core-shell heterostructures, ZnO@ZIF-7 and ZnO@ZIF-71, were prepared using ZnO nanorods as self-sacrificial templates. The structural flexibility of both the MOFs can be easily judged from the distinct molecular-size-related formation modes and photoelectrochemical performances between the two ZnO@ZIF heterostructures. Moreover, the rotational dynamics of the flexible parts of ZIF-7 were studied by analyzing the intrinsic physical properties, such as dielectric constants, of the structure. The present work reminds us to pay particular attention to the influences of the structural flexibility of MOFs on the structure and properties of MOF-involved heterostructures in future studies.It is becoming a challenge to achieve simpler characterization and wider application of flexible metal organic frameworks (MOFs) exhibiting the gate-opening or breathing behavior. Herein, we designed an intelligent MOF-based system where the gate-opening or breathing behavior of MOFs can be facially visualized in solution. Two types of metal oxide@MOF core-shell heterostructures, ZnO@ZIF-7 and ZnO@ZIF-71, were prepared using ZnO nanorods as self-sacrificial templates. The structural flexibility of both the MOFs can be easily judged from the distinct molecular-size-related formation modes and photoelectrochemical performances between the two ZnO@ZIF heterostructures. Moreover, the rotational dynamics of the flexible parts of ZIF-7 were studied by analyzing the intrinsic physical properties, such as dielectric constants, of the structure. The present work reminds us to pay particular attention to the influences of the structural flexibility of

  14. Controlling the interface charge density in GaN-based metal-oxide-semiconductor heterostructures by plasma oxidation of metal layers

    SciTech Connect

    Hahn, Herwig Kalisch, Holger; Vescan, Andrei; Pécz, Béla; Kovács, András; Heuken, Michael

    2015-06-07

    In recent years, investigating and engineering the oxide-semiconductor interface in GaN-based devices has come into focus. This has been driven by a large effort to increase the gate robustness and to obtain enhancement mode transistors. Since it has been shown that deep interface states act as fixed interface charge in the typical transistor operating regime, it appears desirable to intentionally incorporate negative interface charge, and thus, to allow for a positive shift in threshold voltage of transistors to realise enhancement mode behaviour. A rather new approach to obtain such negative charge is the plasma-oxidation of thin metal layers. In this study, we present transmission electron microscopy and energy dispersive X-ray spectroscopy analysis as well as electrical data for Al-, Ti-, and Zr-based thin oxide films on a GaN-based heterostructure. It is shown that the plasma-oxidised layers have a polycrystalline morphology. An interfacial amorphous oxide layer is only detectable in the case of Zr. In addition, all films exhibit net negative charge with varying densities. The Zr layer is providing a negative interface charge density of more than 1 × 10{sup 13 }cm{sup –2} allowing to considerably shift the threshold voltage to more positive values.

  15. Evidence for spin-triplet superconducting correlations in metal-oxide heterostructures with noncollinear magnetization

    NASA Astrophysics Data System (ADS)

    Khaydukov, Yu. N.; Ovsyannikov, G. A.; Sheyerman, A. E.; Constantinian, K. Y.; Mustafa, L.; Keller, T.; Uribe-Laverde, M. A.; Kislinskii, Yu. V.; Shadrin, A. V.; Kalaboukhov, A.; Keimer, B.; Winkler, D.

    2014-07-01

    Heterostructures composed of ferromagnetic La0.7Sr0.3MnO3, ferromagnetic SrRuO3, and superconducting YBa2Cu3O6+x were studied experimentally. Structures of composition Au /La0.7Sr0.3MnO3/SrRuO3/YBa2Cu3O6+x were prepared by pulsed laser deposition, and their high quality was confirmed by x-ray diffraction and reflectometry. A noncollinear magnetic state of the heterostructures was revealed by means of superconducting quantum interference device magnetometry and polarized neutron reflectometry. We have further observed superconducting currents in mesa structures fabricated by deposition of a second superconducting Nb layer on top of the heterostructure, followed by patterning with photolithography and ion-beam etching. Josephson effects observed in these mesa structures can be explained by the penetration of a triplet component of the superconducting order parameter into the magnetic layers.

  16. Oxide heterostructures for efficient solar cells.

    PubMed

    Assmann, Elias; Blaha, Peter; Laskowski, Robert; Held, Karsten; Okamoto, Satoshi; Sangiovanni, Giorgio

    2013-02-15

    We propose an unexplored class of absorbing materials for high-efficiency solar cells: heterostructures of transition-metal oxides. In particular, LaVO(3) grown on SrTiO(3) has a direct band gap ∼1.1  eV in the optimal range as well as an internal potential gradient, which can greatly help to separate the photogenerated electron-hole pairs. Furthermore, oxide heterostructures afford the flexibility to combine LaVO(3) with other materials such as LaFeO(3) in order to achieve even higher efficiencies with band-gap graded solar cells. We use density-functional theory to demonstrate these features.

  17. Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts

    SciTech Connect

    Szyszka, A. E-mail: adam.szyszka@pwr.wroc.pl; Haeberlen, M.; Storck, P.; Thapa, S. B.; Schroeder, T.

    2014-08-28

    Based on a novel double step oxide buffer heterostructure approach for GaN integration on Si, we present an optimized Metal-Semiconductor-Metal (MSM)-based Ultraviolet (UV) GaN photodetector system with integrated short-period (oxide/Si) Distributed Bragg Reflector (DBR) and leakage suppressing Metal-Oxide-Semiconductor (MOS) electrode contacts. In terms of structural properties, it is demonstrated by in-situ reflection high energy electron diffraction and transmission electron microscopy-energy dispersive x-ray studies that the DBR heterostructure layers grow with high thickness homogeneity and sharp interface structures sufficient for UV applications; only minor Si diffusion into the Y{sub 2}O{sub 3} films is detected under the applied thermal growth budget. As revealed by comparative high resolution x-ray diffraction studies on GaN/oxide buffer/Si systems with and without DBR systems, the final GaN layer structure quality is not significantly influenced by the growth of the integrated DBR heterostructure. In terms of optoelectronic properties, it is demonstrated that—with respect to the basic GaN/oxide/Si system without DBR—the insertion of (a) the DBR heterostructures and (b) dark current suppressing MOS contacts enhances the photoresponsivity below the GaN band-gap related UV cut-off energy by almost up to two orders of magnitude. Given the in-situ oxide passivation capability of grown GaN surfaces and the one order of magnitude lower number of superlattice layers in case of higher refractive index contrast (oxide/Si) systems with respect to classical III-N DBR superlattices, virtual GaN substrates on Si via functional oxide buffer systems are thus a promising robust approach for future GaN-based UV detector technologies.

  18. Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures.

    PubMed

    Xiao, Di; Zhu, Wenguang; Ran, Ying; Nagaosa, Naoto; Okamoto, Satoshi

    2011-12-20

    Topological insulators are characterized by a non-trivial band topology driven by the spin-orbit coupling. To fully explore the fundamental science and application of topological insulators, material realization is indispensable. Here we predict, based on tight-binding modelling and first-principles calculations, that bilayers of perovskite-type transition-metal oxides grown along the [111] crystallographic axis are potential candidates for two-dimensional topological insulators. The topological band structure of these materials can be fine-tuned by changing dopant ions, substrates and external gate voltages. We predict that LaAuO(3) bilayers have a topologically non-trivial energy gap of about 0.15 eV, which is sufficiently large to realize the quantum spin Hall effect at room temperature. Intriguing phenomena, such as fractional quantum Hall effect, associated with the nearly flat topologically non-trivial bands found in e(g) systems are also discussed.

  19. Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures

    SciTech Connect

    Xiao, Di; Zhu, Wenguang; Ran, Ying; Nagaosa, Naoto; Okamoto, Satoshi

    2011-01-01

    Topological insulators (TIs) are characterized by a non-trivial band topology driven by the spin-orbit coupling. To fully explore the fundamental science and application of TIs, material realization is indispensable. Here we predict, based on tight-binding modeling and first-principles calculations, that bilayers of perovskite-type transition-metal oxides grown along the [111] crystallographic axis are potential candidates for two-dimensional TIs. The topological band structure of these materials can be fine-tuned by changing dopant ions, substrates and external gate voltages. We predict that LaAuO$_3$ bilayers have a topologically non-trivial energy gap of about 0.15~eV, which is sufficiently large to realize the quantum spin Hall effect at room temperature. Intriguing phenomena, such as fractional quantum Hall effect, associated with the nearly flat topologically non-trivial bands found in $e_g$ systems are also discussed.

  20. Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si.

    PubMed

    Kilpi, Olli-Pekka; Svensson, Johannes; Wu, Jun; Persson, Axel R; Wallenberg, Reine; Lind, Erik; Wernersson, Lars-Erik

    2017-09-14

    III-V compound semiconductors offer a path to continue Moore's law due to their excellent electron transport properties. One major challenge, integrating III-V's on Si, can be addressed by using vapor-liquid-solid grown vertical nanowires. InAs is an attractive material due to its superior mobility, although InAs metal-oxide-semiconductor field-effect transistors (MOSFETs) typically suffer from band-to-band tunneling caused by its narrow band gap, which increases the off-current and therefore the power consumption. In this work, we present vertical heterostructure InAs/InGaAs nanowire MOSFETs with low off-currents provided by the wider band gap material on the drain side suppressing band-to-band tunneling. We demonstrate vertical III-V MOSFETs achieving off-current below 1 nA/μm while still maintaining on-performance comparable to InAs MOSFETs; therefore, this approach opens a path to address not only high-performance applications but also Internet-of-Things applications that require low off-state current levels.

  1. General and Controllable Synthesis Strategy of Metal Oxide/TiO2 Hierarchical Heterostructures with Improved Lithium-Ion Battery Performance

    PubMed Central

    Wang, Hengguo; Ma, Delong; Huang, Xiaolei; Huang, Yun; Zhang, Xinbo

    2012-01-01

    We demonstrate a simple, efficient, yet versatile strategy for the synthesis of novel hierarchical heterostructures composed of TiO2 nanofiber stem and various metal oxides (MOs) secondary nanostructures, including Co3O4, Fe2O3, Fe3O4, and CuO, by advantageously combining the versatility of the electrospinning technique and hydrothermal growth method, for which the controllable formation process and possible formation mechanism are also investigated. Moreover, as a proof-of-concept demonstration of the functional properties of these hierarchical heterostructures, the Co3O4/TiO2 hierarchical heterostructures are investigated as the lithium-ion batteries (LIBs) anode materials for the first time, which not only delivers a high reversible capacity of 632.5 mAh g-1 and 95.3% capacity retention over 480 cycles, but also shows excellent rate capability with respect to the pristine TiO2 nanofibers. The synergetic effect between Co3O4 and TiO2 as well as the unique feature of hierarchical heterostructures are probably responsible for the enhanced electrochemical performance. PMID:23050085

  2. Charge transfer driven emergent phenomena in oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Chen, Hanghui; Millis, Andrew

    2017-06-01

    Complex oxides exhibit many intriguing phenomena, including metal-insulator transition, ferroelectricity/multiferroicity, colossal magnetoresistance and high transition temperature superconductivity. Advances in epitaxial thin film growth techniques enable us to combine different complex oxides with atomic precision and form an oxide heterostructure. Recent theoretical and experimental work has shown that charge transfer across oxide interfaces generally occurs and leads to a great diversity of emergent interfacial properties which are not exhibited by bulk constituents. In this report, we review mechanisms and physical consequence of charge transfer across interfaces in oxide heterostructures. Both theoretical proposals and experimental measurements of various oxide heterostructures are discussed and compared. We also review the theoretical methods that are used to calculate charge transfer across oxide interfaces and discuss the success and challenges in theory. Finally, we present a summary and perspectives for future research.

  3. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas.

    PubMed

    Zhang, Kexiong; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Sang, Liwen

    2016-03-29

    The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al2O3 gate dielectric shows a drain-source current density of 0.51 mA/mm at the gate voltage of -2 V and drain bias of -15 V, an ON/OFF ratio of two orders of magnitude and effective hole mobility of 10 cm(2)/Vs at room temperature. The normal operation of MOSFET without freeze-out at 8 K further proves that the p-channel behavior is originated from the polarization-induced 2DHG.

  4. AlGaN/GaN metal oxide semiconductor heterostructure field-effect transistors with 4 nm thick Al2O3 gate oxide

    NASA Astrophysics Data System (ADS)

    Gregušová, D.; Stoklas, R.; Čičo, K.; Lalinský, T.; Kordoš, P.

    2007-08-01

    AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with 4 nm thick Al2O3 gate oxide were prepared and their performance was compared with that of AlGaN/GaN HFETs. The MOSHFETs yielded ~40% increase of the saturation drain current compared with the HFETs, which is larger than expected due to the gate oxide passivation. Despite a larger gate-channel separation in the MOSHFETs, a higher extrinsic transconductance than that of the HFETs was measured. The drift mobility of the MOSHFETs, evaluated on large-gate FET structures, was significantly higher than that of the HFETs. The zero-bias mobility for MOSHFETs and HFETs was 1950 cm2 V-1 s-1 and 1630 cm2 V-1 s-1, respectively. These features indicate an increase of the drift velocity and/or a decrease of the parasitic series resistance in the MOSHFETs. The current collapse, evaluated from pulsed I-V measurements, was highly suppressed in the MOSHFETs with 4 nm thick Al2O3 gate oxide. This result, together with the suppressed frequency dispersion of the capacitance, indicates that the density of traps in the Al2O3/AlGaN/GaN MOSHFETs was significantly reduced.

  5. Full solution-processed synthesis of all metal oxide-based tree-like heterostructures on fluorine-doped tin oxide for water splitting.

    PubMed

    Yin, Zongyou; Wang, Zheng; Du, Yaping; Qi, Xiaoying; Huang, Yizhong; Xue, Can; Zhang, Hua

    2012-10-09

    Well-ordered tree-like functional heterostructures, composed of the environmentally friendly oxides ZnO, TiO(2) , and CuO, on a fluorine-doped tin oxide substrate are realized by a practical, cost-effective, solution-processable strategy. The heterostructures are demonstrated to be an efficient light-harvesting medium in a photo-electrochemical cell to split water for hydrogen-gas generation, and the developed strategy provides a highly promising, cheap, green way to fabricate multifunctional hierarchically branched structures for many potential applications.

  6. Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

    NASA Astrophysics Data System (ADS)

    Liuan, Li; Jiaqi, Zhang; Yang, Liu; Jin-Ping, Ao

    2016-03-01

    In this paper, TiN/AlOx gated AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 °C with the contact resistance approximately 1.6 Ω·mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/AlOx gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate AlGaN/GaN MOS-HFETs. Project supported by the International Science and Technology Collaboration Program of China (Grant No. 2012DFG52260).

  7. Giant switchable Rashba effect in oxide heterostructures

    SciTech Connect

    Zhong, Zhicheng; Si, Liang; Zhang, Qinfang; Yin, Wei-Guo; Yunoki, Seiji; Held, Karsten

    2015-03-01

    One of the most fundamental phenomena and a reminder of the electron’s relativistic nature is the Rashba spin splitting for broken inversion symmetry. Usually this splitting is a tiny relativistic correction. Interfacing ferroelectric BaTiO₃ and a 5d (or 4d) transition metal oxide with a large spin-orbit coupling, Ba(Os,Ir,Ru)O₃, we show that giant Rashba spin splittings are indeed possible and even controllable by an external electric field. Based on density functional theory and a microscopic tight binding understanding, we conclude that the electric field is amplified and stored as a ferroelectric Ti-O distortion which, through the network of oxygen octahedra, induces a large (Os,Ir,Ru)-O distortion. The BaTiO₃/Ba(Os,Ru,Ir)O₃ heterostructure is hence the ideal test station for switching and studying the Rashba effect and allows applications at room temperature.

  8. Giant switchable Rashba effect in oxide heterostructures

    DOE PAGES

    Zhong, Zhicheng; Si, Liang; Zhang, Qinfang; ...

    2015-03-01

    One of the most fundamental phenomena and a reminder of the electron’s relativistic nature is the Rashba spin splitting for broken inversion symmetry. Usually this splitting is a tiny relativistic correction. Interfacing ferroelectric BaTiO₃ and a 5d (or 4d) transition metal oxide with a large spin-orbit coupling, Ba(Os,Ir,Ru)O₃, we show that giant Rashba spin splittings are indeed possible and even controllable by an external electric field. Based on density functional theory and a microscopic tight binding understanding, we conclude that the electric field is amplified and stored as a ferroelectric Ti-O distortion which, through the network of oxygen octahedra, inducesmore » a large (Os,Ir,Ru)-O distortion. The BaTiO₃/Ba(Os,Ru,Ir)O₃ heterostructure is hence the ideal test station for switching and studying the Rashba effect and allows applications at room temperature.« less

  9. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

    PubMed Central

    Zhang, Kexiong; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Sang, Liwen

    2016-01-01

    The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al2O3 gate dielectric shows a drain-source current density of 0.51 mA/mm at the gate voltage of −2 V and drain bias of −15 V, an ON/OFF ratio of two orders of magnitude and effective hole mobility of 10 cm2/Vs at room temperature. The normal operation of MOSFET without freeze-out at 8 K further proves that the p-channel behavior is originated from the polarization-induced 2DHG. PMID:27021054

  10. Microstructure of epitaxial ferroelectric/metal oxide electrode thin film heterostructures on LaAlO{sub 3} and silicon

    SciTech Connect

    Ghonge, S.G.; Goo, E.; Ramesh, R.; Haakenaasen, R.; Fork, D.K.

    1994-12-31

    TEM and X-ray diffraction studies of PZT, PLZT, lead titanate and bismuth titanate ferroelectric thin films and YBa{sub 2}Cu{sub 3}O{sub 7{minus}x}(YBCO), Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8}(BSCCO) and La{sub 0.5}Sr{sub 0.5}CoO{sub 3}(LSCO) electrically conductive oxide thin films, that are sequentially deposited by pulsed laser ablation, show that these films may be deposited epitaxially onto LaAlO{sub 3}(LAO) or Si substrates. The conductive oxides are promising candidates for use is electrodes in place of metal electrodes in integrated ferroelectric device applications. The oxide electrodes are more chemically compatible with the ferroelectric films. High resolution electron microscopy his been used to investigate the interface between the ferroelectric and metal oxide thin films and no reaction was detected. Epitaxial growth is possible due to the similar crystal structures and the small lattice mismatch. The lattice mismatch that is present causes the domains in the ferroelectric films to be preferentially oriented and in the case of lead titanate, the film is single domain. These films may also have potential applications in integrated optical devices.

  11. Core-shell heterostructured metal oxide arrays enable superior light-harvesting and hysteresis-free mesoscopic perovskite solar cells

    NASA Astrophysics Data System (ADS)

    Mahmood, Khalid; Swain, Bhabani Sankar; Amassian, Aram

    2015-07-01

    To achieve highly efficient mesoscopic perovskite solar cells (PSCs), the structure and properties of an electron transport layer (ETL) or material (ETM) have been shown to be of supreme importance. Particularly, the core-shell heterostructured mesoscopic ETM architecture has been recognized as a successful electrode design, because of its large internal surface area, superior light-harvesting efficiency and its ability to achieve fast charge transport. Here we report the successful fabrication of a hysteresis-free, 15.3% efficient PSC using vertically aligned ZnO nanorod/TiO2 shell (ZNR/TS) core-shell heterostructured ETMs for the first time. We have also added a conjugated polyelectrolyte polymer into the growth solution to promote the growth of high aspect ratio (AR) ZNRs and substantially improve the infiltration of the perovskite light absorber into the ETM. The PSCs based on the as-synthesized core-shell ZnO/TiO2 heterostructured ETMs exhibited excellent performance enhancement credited to the superior light harvesting capability, larger surface area, prolonged charge-transport pathways and lower recombination rate. The unique ETM design together with minimal hysteresis introduces core-shell ZnO/TiO2 heterostructures as a promising mesoscopic electrode approach for the fabrication of efficient PSCs.To achieve highly efficient mesoscopic perovskite solar cells (PSCs), the structure and properties of an electron transport layer (ETL) or material (ETM) have been shown to be of supreme importance. Particularly, the core-shell heterostructured mesoscopic ETM architecture has been recognized as a successful electrode design, because of its large internal surface area, superior light-harvesting efficiency and its ability to achieve fast charge transport. Here we report the successful fabrication of a hysteresis-free, 15.3% efficient PSC using vertically aligned ZnO nanorod/TiO2 shell (ZNR/TS) core-shell heterostructured ETMs for the first time. We have also added a

  12. Interface magnetism in complex oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Srikanth, Hariharan

    2008-03-01

    Magnetic oxides are an important class of materials from the perspectives of fundamental physics and technological applications. Advances in growth of high quality thin films and epitaxial oxide heterostructures over the years, have led to the realization of ideal condensed matter systems in which the complex and rich physics associated with cooperative phenomena can be explored. Examples of coupled phenomena in heterostructures include exchange bias effects, magnetoelectric coupling and interplay between magnetism and superconductivity. In this talk, I will focus on three classes of oxide heterostructures --PLD-grown M-type barium hexaferrite(BaM)/barium strontium titanate(BST), CVD-grown CrO2/Cr2O3 bilayers and high-pressure sputtered LCMO/YBCO films. The common theme is the magnetic coupling across the interfaces. I will demonstrate that dynamic susceptibility and kinetic inductance experiments using a sensitive tunnel-diode oscillator (TDO) are effective probes of such coupled effects. In the case of CrO2/Cr2O3 and LCMO/YBCO, the interface coupling results in anomalous anisotropy, exchange bias in the former and complex interaction between the LCMO magnetism and YBCO vortex lattice in the latter. In BaM/BST heterostructures, I will discuss how interfacial coupling influences the microwave response that is both electrically and magnetically tunable.

  13. Core-shell heterostructured metal oxide arrays enable superior light-harvesting and hysteresis-free mesoscopic perovskite solar cells.

    PubMed

    Mahmood, Khalid; Swain, Bhabani Sankar; Amassian, Aram

    2015-08-14

    To achieve highly efficient mesoscopic perovskite solar cells (PSCs), the structure and properties of an electron transport layer (ETL) or material (ETM) have been shown to be of supreme importance. Particularly, the core-shell heterostructured mesoscopic ETM architecture has been recognized as a successful electrode design, because of its large internal surface area, superior light-harvesting efficiency and its ability to achieve fast charge transport. Here we report the successful fabrication of a hysteresis-free, 15.3% efficient PSC using vertically aligned ZnO nanorod/TiO2 shell (ZNR/TS) core-shell heterostructured ETMs for the first time. We have also added a conjugated polyelectrolyte polymer into the growth solution to promote the growth of high aspect ratio (AR) ZNRs and substantially improve the infiltration of the perovskite light absorber into the ETM. The PSCs based on the as-synthesized core-shell ZnO/TiO2 heterostructured ETMs exhibited excellent performance enhancement credited to the superior light harvesting capability, larger surface area, prolonged charge-transport pathways and lower recombination rate. The unique ETM design together with minimal hysteresis introduces core-shell ZnO/TiO2 heterostructures as a promising mesoscopic electrode approach for the fabrication of efficient PSCs.

  14. Interface States and Trapping Effects in Al2O3- and ZrO2/InAlN/AlN/GaN Metal-Oxide-Semiconductor Heterostructures

    NASA Astrophysics Data System (ADS)

    Ťapajna, Milan; Kuzmík, Jan; Čičo, Karol; Pogany, Dionyz; Pozzovivo, Gianmauro; Strasser, Gottfried; Abermann, Stephan; Bertagnolli, Emmerich; Carlin, Jean-François; Grandjean, Nicolas; Fröhlich, Karol

    2009-09-01

    We investigate Al2O3- and ZrO2/InAlN/GaN metal-oxide-semiconductor heterostructures (MOS-H) using capacitance-time transients in the temperature range of 25-300 °C. A deep-level transient spectroscopy based analysis revealed the maximum interface state density distributions Dit(E) up to 3×1013 and 1×1013 eV-1 cm-2 for the Al2O3/InAlN and ZrO2/InAlN interface, respectively. The integral densities of interface states correlate well with the trapping-related gate-lag effect in corresponding InAlN/GaN MOS high electron mobility transistors (HEMTs). This explains the strongly reduced lag effect in ZrO2 MOS HEMTs. We assume hole trapping at oxide/InAlN interface to be a dominant effect responsible for the gate-lag effect in InAlN/GaN MOS HEMTs.

  15. Interface States and Trapping Effects in Al2O3- and ZrO2/InAlN/AlN/GaN Metal-Oxide-Semiconductor Heterostructures

    NASA Astrophysics Data System (ADS)

    Ťapajna, Milan; Kuzmík, Jan; Čičo, Karol; Pogany, Dionyz; Pozzovivo, Gianmauro; Strasser, Gottfried; Abermann, Stephan; Bertagnolli, Emmerich; Carlin, Jean-François; Grandjean, Nicolas; Fröhlich, Karol

    2009-09-01

    We investigate Al2O3- and ZrO2/InAlN/GaN metal-oxide-semiconductor heterostructures (MOS-H) using capacitance-time transients in the temperature range of 25-300 °C. A deep-level transient spectroscopy based analysis revealed the maximum interface state density distributions Dit(E) up to 3× 1013 and 1× 1013 eV-1 cm-2 for the Al2O3/InAlN and ZrO2/InAlN interface, respectively. The integral densities of interface states correlate well with the trapping-related gate-lag effect in corresponding InAlN/GaN MOS high electron mobility transistors (HEMTs). This explains the strongly reduced lag effect in ZrO2 MOS HEMTs. We assume hole trapping at oxide/InAlN interface to be a dominant effect responsible for the gate-lag effect in InAlN/GaN MOS HEMTs.

  16. Thermal and Electrical Transport in Oxide Heterostructures

    NASA Astrophysics Data System (ADS)

    Ravichandran, Jayakanth

    This dissertation presents a study of thermal and electrical transport phenomena in heterostructures of transition metal oxides, with specific interest in understanding and tailoring thermoelectricity in these systems. Thermoelectric energy conversion is a promising method for waste heat recovery and the efficiency of such an engine is directly related to a material dependent figure of merit, Z, given as S2sigma/kappa, where S is thermopower and sigma and kappa are electrical and thermal conductivity respectively. Achieving large figure of merit has been hampered by the coupling between these three thermoelectric coefficients, and the primary aim of this study is to understand the nature of thermoelectricity in complex oxides and identify mechanisms which can allow tuning of one or more thermoelectric coefficients in a favorable manner. Unlike the heavily studied conventional thermoelectric semiconductors, transition metals based complex oxides show conduction band characteristics dominated by d-bands, with much larger effective masses and varying degrees of electron correlations. These systems provide for exotic thermoelectric effects which are typically not explained by conventional theories and hence provide an ideal platform for exploring the limits of thermoelectricity. Meanwhile, oxides are composed of earth abundant elements and have excellent high temperature stability, thus providing compelling technological possibilities for thermoelectrics based power generation. In this dissertation, we address specific aspects of thermoelectricity in model complex oxide systems such as perovskite titanates and layered cobaltates to understand thermal and thermoelectric behavior and explore the tunability of thermoelectricity in these systems. The demonstration of band engineering as a viable method to tune physical properties of materials is explored. The model system used for this case is strontium titanate, where two dopants such as La on the Sr-site and oxygen

  17. Topological properties and correlation effects in oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Okamoto, Satoshi

    2015-03-01

    Transition-metal oxides (TMOs) have long been one of the main subjects of material science because of their novel functionalities such as high-Tc superconductivity in cuprates and the colossal magnetoresistance effect in manganites. In recent years, we have seen tremendous developments in thin film growth techniques with the atomic precision, resulting in the discovery of a variety of electronic states in TMO heterostructures. These developments motivate us to explore the possibility of novel quantum states of matter such as topological insulators (TIs) in TMO heterostructures. In this talk, I will present our systematic theoretical study on unprecedented electronic states in TMO heterostructures. An extremely simple but crucial observation is that, when grown along the [111] crystallographic axis, bilayers of perovskite TMOs form buckled honeycomb lattices of transition-metal ions, similar to graphene. Thus, with the relativistic spin-orbit coupling and proper band filling, two-dimensional TI states or spin Hall insulators are anticipated. Based on tight-binding modeling and density-functional theory calculations, possible candidate materials for TIs are identified. By means of the dynamical-mean-field theory and a slave-boson mean field theory, correlation effects, characteristics of TMOs, are also examined. I will further discuss future prospects in topological phenomena in TMO heterostructures and related systems. The author thanks D. Xiao, W. Zhu, Y. Ran, R. Arita, Y. Nomura and N. Nagaosa for their fruitful discussions and collaboration. This work is supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division.

  18. Probing structure-induced optical behavior in a new class of self-activated luminescent 0D/1D CaWO₄ metal oxide – CdSe nanocrystal composite heterostructures

    SciTech Connect

    Han, Jinkyu; McBean, Coray; Wang, Lei; Hoy, Jessica; Jaye, Cherno; Liu, Haiqing; Li, Zhuo-Qun; Sfeir, Matthew Y.; Fischer, Daniel A.; Taylor, Gordon T.; Misewich, James A.; Wong, Stanislaus S.

    2015-01-30

    In this report, we synthesize and characterize the structural and optical properties of novel heterostructures composed of (i) semiconducting nanocrystalline CdSe quantum dot (QDs) coupled with (ii) both one and zero-dimensional (1D and 0D) motifs of self-activated luminescence CaWO₄ metal oxides. Specifically, ~4 nm CdSe QDs have been anchored onto (i) high-aspect ratio 1D nanowires, measuring ~230 nm in diameter and ~3 μm in length, as well as onto (ii) crystalline 0D nanoparticles (possessing an average diameter of ~ 80 nm) of CaWO₄ through the mediation of 3-mercaptopropionic acid (MPA) as a connecting linker. Composite formation was confirmed by complementary electron microscopy and spectroscopy (i.e. IR and Raman) data. In terms of luminescent properties, our results show that our 1D and 0D heterostructures evince photoluminescence (PL) quenching and shortened PL lifetimes of CaWO₄ as compared with unbound CaWO₄. We propose that a photo-induced electron transfer process occurs from CaWO₄ to CdSe QDs, a scenario which has been confirmed by NEXAFS measurements and which highlights a decrease in the number of unoccupied orbitals in the conduction bands of CdSe QDs. By contrast, the PL signature and lifetimes of MPA-capped CdSe QDs within these heterostructures do not exhibit noticeable changes as compared with unbound MPA-capped CdSe QDs. The striking difference in optical behavior between CaWO₄ nanostructures and CdSe QDs within our heterostructures can be correlated with the relative positions of their conduction and valence energy band levels. In addition, the PL quenching behaviors for CaWO₄ within the heterostructure configuration were examined by systematically varying (i) the quantities and coverage densities of CdSe QDs as well as (ii) the intrinsic morphology (and by extension, the inherent crystallite size) of CaWO₄ itself.

  19. Rashba-Edelstein Magnetoresistance in Metallic Heterostructures

    NASA Astrophysics Data System (ADS)

    Nakayama, Hiroyasu; Kanno, Yusuke; An, Hongyu; Tashiro, Takaharu; Haku, Satoshi; Nomura, Akiyo; Ando, Kazuya

    2016-09-01

    We report the observation of magnetoresistance originating from Rashba spin-orbit coupling (SOC) in a metallic heterostructure: the Rashba-Edelstein (RE) magnetoresistance. We show that the simultaneous action of the direct and inverse RE effects in a Bi /Ag /CoFeB trilayer couples current-induced spin accumulation to the electric resistance. The electric resistance changes with the magnetic-field angle, reminiscent of the spin Hall magnetoresistance, despite the fact that bulk SOC is not responsible for the magnetoresistance. We further found that, even when the magnetization is saturated, the resistance increases with increasing the magnetic-field strength, which is attributed to the Hanle magnetoresistance in this system.

  20. Thermoelectric Properties of Complex Oxide Heterostructures

    NASA Astrophysics Data System (ADS)

    Cain, Tyler Andrew

    Thermoelectrics are a promising energy conversion technology for power generation and cooling systems. The thermal and electrical properties of the materials at the heart of thermoelectric devices dictate conversion efficiency and technological viability. Studying the fundamental properties of potentially new thermoelectric materials is of great importance for improving device performance and understanding the electronic structure of materials systems. In this dissertation, investigations on the thermoelectric properties of a prototypical complex oxide, SrTiO3, are discussed. Hybrid molecular beam epitaxy (MBE) is used to synthesize La-doped SrTiO3 thin films, which exhibit high electron mobilities and large Seebeck coefficients resulting in large thermoelectric power factors at low temperatures. Large interfacial electron densities have been observed in SrTiO3/RTiO 3 (R=Gd,Sm) heterostructures. The thermoelectric properties of such heterostructures are investigated, including the use of a modulation doping approach to control interfacial electron densities. Low-temperature Seebeck coefficients of extreme electron-density SrTiO3 quantum wells are shown to provide insight into their electronic structure.

  1. Chemical changes in carbon Nanotube-Nickel/Nickel Oxide Core/Shell nanoparticle heterostructures treated at high temperatures

    SciTech Connect

    Chopra, Nitin; McWhinney, Hylton G.; Shi Wenwu

    2011-06-15

    Heterostructures composed of carbon nanotube (CNT) coated with Ni/NiO core/shell nanoparticles (denoted as CNC heterostructures) were synthesized in a wet-chemistry and single-step synthesis route involving direct nucleation of nanoparticles on CNT surface. Two different aspects of CNC heterostructures were studied here. First, it was observed that the nanoparticle coatings were more uniform on the as-produced and non-purified CNTs compared to purified (or acid treated) CNTs. These heterostructures were characterized using electron microscopy, Raman spectroscopy, and energy dispersive spectroscopy. Second, thermal stability of CNC heterostructures was studied by annealing them in N{sub 2}-rich (O{sub 2}-lean) environment between 125 and 750 deg. C for 1 h. A detailed X-ray photoelectron spectroscopy and Raman spectroscopy analysis was performed to evaluate the effects of annealing temperatures on chemical composition, phases, and stability of the heterostructures. It was observed that the CNTs present in the heterostructures completely decomposed and core Ni nanoparticle oxidized significantly between 600 and 750 deg. C. - Research Highlights: {yields} Heterostructures composed of CNTs coated with Ni/NiO core/shell nanoparticles. {yields} Poor nanoparticle coverage on purified CNT surface compared to non-purified CNTs. {yields} CNTs in heterostructures decompose between 600 and 750 deg. C in N{sub 2}-rich atmosphere. {yields} Metallic species in heterostructures were oxidized at higher temperatures.

  2. Inverse spin Hall effect in a complex ferromagnetic oxide heterostructure

    NASA Astrophysics Data System (ADS)

    Wahler, Martin; Homonnay, Nico; Richter, Tim; Müller, Alexander; Eisenschmidt, Christian; Fuhrmann, Bodo; Schmidt, Georg

    2016-06-01

    We present spin pumping and inverse spin Hall effect (ISHE) in an epitaxial complex oxide heterostructure. Ferromagnetic La0.7Sr0.3MnO3 (LSMO) is used as a source of spin pumping while the spin sink exhibiting the ISHE consists of SrRuO3 (SRO). SRO is a ferromagnetic oxide with metallic conductivity, however, with a Curie temperature (TC) of 155 K, thus well below room temperature. This choice allows to perform the experiment above and below TC of the SRO and to demonstrate that SRO not only shows an ISHE of a magnitude comparable to Pt (though with opposite sign) in its non magnetic state but also exhibits a finite ISHE even 50 K below TC.

  3. Inverse spin Hall effect in a complex ferromagnetic oxide heterostructure.

    PubMed

    Wahler, Martin; Homonnay, Nico; Richter, Tim; Müller, Alexander; Eisenschmidt, Christian; Fuhrmann, Bodo; Schmidt, Georg

    2016-06-27

    We present spin pumping and inverse spin Hall effect (ISHE) in an epitaxial complex oxide heterostructure. Ferromagnetic La0.7Sr0.3MnO3 (LSMO) is used as a source of spin pumping while the spin sink exhibiting the ISHE consists of SrRuO3 (SRO). SRO is a ferromagnetic oxide with metallic conductivity, however, with a Curie temperature (TC) of 155 K, thus well below room temperature. This choice allows to perform the experiment above and below TC of the SRO and to demonstrate that SRO not only shows an ISHE of a magnitude comparable to Pt (though with opposite sign) in its non magnetic state but also exhibits a finite ISHE even 50 K below TC.

  4. Inverse spin Hall effect in a complex ferromagnetic oxide heterostructure

    PubMed Central

    Wahler, Martin; Homonnay, Nico; Richter, Tim; Müller, Alexander; Eisenschmidt, Christian; Fuhrmann, Bodo; Schmidt, Georg

    2016-01-01

    We present spin pumping and inverse spin Hall effect (ISHE) in an epitaxial complex oxide heterostructure. Ferromagnetic La0.7Sr0.3MnO3 (LSMO) is used as a source of spin pumping while the spin sink exhibiting the ISHE consists of SrRuO3 (SRO). SRO is a ferromagnetic oxide with metallic conductivity, however, with a Curie temperature (TC) of 155 K, thus well below room temperature. This choice allows to perform the experiment above and below TC of the SRO and to demonstrate that SRO not only shows an ISHE of a magnitude comparable to Pt (though with opposite sign) in its non magnetic state but also exhibits a finite ISHE even 50 K below TC. PMID:27346793

  5. Semiconductor-oxide heterostructured nanowires using postgrowth oxidation.

    PubMed

    Wallentin, Jesper; Ek, Martin; Vainorious, Neimantas; Mergenthaler, Kilian; Samuelson, Lars; Pistol, Mats-Erik; Reine Wallenberg, L; Borgström, Magnus T

    2013-01-01

    Semiconductor-oxide heterointerfaces have several electron volts high-charge carrier potential barriers, which may enable devices utilizing quantum confinement at room temperature. While a single heterointerface is easily formed by oxide deposition on a crystalline semiconductor, as in MOS transistors, the amorphous structure of most oxides inhibits epitaxy of a second semiconductor layer. Here, we overcome this limitation by separating epitaxy from oxidation, using postgrowth oxidation of AlP segments to create axial and core-shell semiconductor-oxide heterostructured nanowires. Complete epitaxial AlP-InP nanowire structures were first grown in an oxygen-free environment. Subsequent exposure to air converted the AlP segments into amorphous aluminum oxide segments, leaving isolated InP segments in an oxide matrix. InP quantum dots formed on the nanowire sidewalls exhibit room temperature photoluminescence with small line widths (down to 15 meV) and high intensity. This optical performance, together with the control of heterostructure segment length, diameter, and position, opens up for optoelectrical applications at room temperature.

  6. Probing structure-induced optical behavior in a new class of self-activated luminescent 0D/1D CaWO₄ metal oxide – CdSe nanocrystal composite heterostructures

    DOE PAGES

    Han, Jinkyu; McBean, Coray; Wang, Lei; ...

    2015-01-30

    In this report, we synthesize and characterize the structural and optical properties of novel heterostructures composed of (i) semiconducting nanocrystalline CdSe quantum dot (QDs) coupled with (ii) both one and zero-dimensional (1D and 0D) motifs of self-activated luminescence CaWO₄ metal oxides. Specifically, ~4 nm CdSe QDs have been anchored onto (i) high-aspect ratio 1D nanowires, measuring ~230 nm in diameter and ~3 μm in length, as well as onto (ii) crystalline 0D nanoparticles (possessing an average diameter of ~ 80 nm) of CaWO₄ through the mediation of 3-mercaptopropionic acid (MPA) as a connecting linker. Composite formation was confirmed by complementarymore » electron microscopy and spectroscopy (i.e. IR and Raman) data. In terms of luminescent properties, our results show that our 1D and 0D heterostructures evince photoluminescence (PL) quenching and shortened PL lifetimes of CaWO₄ as compared with unbound CaWO₄. We propose that a photo-induced electron transfer process occurs from CaWO₄ to CdSe QDs, a scenario which has been confirmed by NEXAFS measurements and which highlights a decrease in the number of unoccupied orbitals in the conduction bands of CdSe QDs. By contrast, the PL signature and lifetimes of MPA-capped CdSe QDs within these heterostructures do not exhibit noticeable changes as compared with unbound MPA-capped CdSe QDs. The striking difference in optical behavior between CaWO₄ nanostructures and CdSe QDs within our heterostructures can be correlated with the relative positions of their conduction and valence energy band levels. In addition, the PL quenching behaviors for CaWO₄ within the heterostructure configuration were examined by systematically varying (i) the quantities and coverage densities of CdSe QDs as well as (ii) the intrinsic morphology (and by extension, the inherent crystallite size) of CaWO₄ itself.« less

  7. Size control of noble metal clusters and metallic heterostructures through the reduction kinetics of metal precursors

    NASA Astrophysics Data System (ADS)

    Sevonkaev, Igor V.; Herein, Daniel; Jeske, Gerald; Goia, Dan V.

    2014-07-01

    Eight precious metal salts/complexes were reduced in propylene glycol at temperatures ranging between 110 and 170 °C. We found that the reduction temperature and the size of precipitated metallic nanoparticles formed were significantly affected by the structure and reactivity of the metal precursors. The choice of noble metal precursor offers flexibility for designing, fabricating and controlling the size of metallic heterostructures with tunable properties.Eight precious metal salts/complexes were reduced in propylene glycol at temperatures ranging between 110 and 170 °C. We found that the reduction temperature and the size of precipitated metallic nanoparticles formed were significantly affected by the structure and reactivity of the metal precursors. The choice of noble metal precursor offers flexibility for designing, fabricating and controlling the size of metallic heterostructures with tunable properties. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr03045a

  8. General Considerations of the Electrostatic Boundary Conditions in Oxide Heterostructures

    SciTech Connect

    Higuchi, Takuya

    2011-08-19

    When the size of materials is comparable to the characteristic length scale of their physical properties, novel functionalities can emerge. For semiconductors, this is exemplified by the 'superlattice' concept of Esaki and Tsu, where the width of the repeated stacking of different semiconductors is comparable to the 'size' of the electrons, resulting in novel confined states now routinely used in opto-electronics. For metals, a good example is magnetic/non-magnetic multilayer films that are thinner than the spin-scattering length, from which giant magnetoresistance (GMR) emerged, used in the read heads of hard disk drives. For transition metal oxides, a similar research program is currently underway, broadly motivated by the vast array of physical properties that they host. This long-standing notion has been recently invigorated by the development of atomic-scale growth and probe techniques, which enables the study of complex oxide heterostructures approaching the precision idealized in Fig. 1(a). Taking the subset of oxides derived from the perovskite crystal structure, the close lattice match across many transition metal oxides presents the opportunity, in principle, to develop a 'universal' heteroepitaxial materials system. Hand-in-hand with the continual improvements in materials control, an increasingly relevant challenge is to understand the consequences of the electrostatic boundary conditions which arise in these structures. The essence of this issue can be seen in Fig. 1(b), where the charge sequence of the sublayer 'stacks' for various representative perovskites is shown in the ionic limit, in the (001) direction. To truly 'universally' incorporate different properties using different materials components, be it magnetism, ferroelectricity, superconductivity, etc., it is necessary to access and join different charge sequences, labelled here in analogy to the designations 'group IV, III-V, II-VI' for semiconductors. As we will review, interfaces between

  9. Topological phases in complex oxide interfaces and heterostructures

    NASA Astrophysics Data System (ADS)

    Fiete, Gregory A.

    2013-03-01

    In this talk we highlight recent theoretical work from our group aimed at identifying complex oxide interfaces and heterostructures that are expected to support topological phases, namely the Z2 time-reversal invariant topological insulator and the zero magnetic field Chern insulator, or quantum anomalous Hall state. We focus on two particular systems: (1) Perovskites of the form ABO3 and (2) Pyrochlores of the form A2B2O7 where A is usually a rare earth element and B is a transition metal element. One of our main results is that thin film growth along the [111] direction is favorable for the realization of topological phases in experiment. We lay out the most important film properties that appear to favor topological phases and discuss the different physics associated with realizing topological phases in 3d, 4d, and the heaviest 5d-based transition metal oxide systems. Key open questions and experimental challenges are presented, as well as the potential advantages that oxide systems offer over the Bi-based topological insulator material class in device applications. Work done in collaboration with Andreas Ruegg, Xiang Hu, Chandrima Mitra, and Alex Demkov. We gratefully acknowledge financial support from grants ARO W911NF-09-1-0527 and NSF DMR-0955778.

  10. High Speed Heterostructure Metal-Semiconductor-Metal Photodetectors

    NASA Astrophysics Data System (ADS)

    Cola, A.; Nabet, B.; Chen, X.; Quaranta, F.

    2005-01-01

    In this work we review the properties of a class of metal-semiconductor-metal photodetectors based on heterojunction structures. Particularly, an AlGaAs/GaAs device is detailed in which the absorption region is in the GaAs layer, and a two-dimensional electron gas is formed at the heterointerface due toδ-doping of the widegap material. This heterostructure metal-semiconductor-metal photodetector also contains an AlGaAs distributed Bragg reflector that forms a resonant cavity for detection at 850 nm. The beneficial effect of the two-dimensional electron gas in the GaAs absorption layer in terms of speed and sensitivity is demonstrated by comparing samples with and without doping in the AlGaAs layer. The design and the physical properties of the grown epitaxial structure are presented, together with the static and dynamic characteristics of the device in time domain. In particular, photocurrent spectra exhibit a 30 nm wide peak at 850 nm, and time response measurements give a bandwidth over 30 GHz. A combination of very low dark current and capacitance, fast response, wavelength selectivity, and compatibility with high electron mobility transistors makes this device suitable for a number of application areas, such as Gigabit and 10 Gigabit Ethernet, wavelength division multiplexing, remote sensing, and medical applications.

  11. Fabrication of Metal-Semiconductor Heterostructures in Silicon Nanowires

    NASA Astrophysics Data System (ADS)

    Yang, Luyun

    The increasing demand for fossil fuels and the need to reduce greenhouse gases require clean energy sources and more efficient utilization of energy. Thermoelectric materials provide a means toward achieving these goals since they convert heat, including waste heat, directly into an electric potential difference. Metal-semiconductor heterostructures can work as Schottky barriers in thermoelectric materials to increase thermoelectric efficiency. In this project, nickel silicide phases were introduced into silicon nanowires (SiNWs) to build up the Schottky barrier. SiNW arrays were fabricated using a metal-assisted chemical process, creating SiNWs about 200 nm in diameter and 30im in length. Different methods were adopted for nickel deposition: electroless nickel deposition, electro nickel deposition, E-beam deposition, and thermal evaporation. The samples were examined by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results show that depositing nickel on SiNWs in an aqueous solution without electricity is a simple way to deposit nickel particles, and the morphology of nickel particles depends on the concentration of the deposition bath. However, an aqueous solution will cause oxidation of the SiNWs and hinder the formation of nickel silicide. To solve this problem, depositing nickel on SiNWs in organic solutions inside an oxygen-free glove box is a way to prevent oxidation, and nickel can diffuse into silicon substrates easily via annealing when there no oxidation layer on the surface of SiNWs. The dominant phase formed in these samples is NiSi2 after being annealed at 650°C for one hour in a tube furnace.

  12. On the Design of Oxide Films, Nanomaterials, and Heterostructures for Solar Water Oxidation Photoanodes

    NASA Astrophysics Data System (ADS)

    Kronawitter, Coleman Xaver

    Photoelectrochemistry and its associated technologies show unique potential to facilitate the large-scale production of solar fuels—those energy-rich chemicals obtained through conversion processes driven by solar energy, mimicking the photosynthetic process of green plants. The critical component of photoelectrochemical devices designed for this purpose is the semiconductor photoelectrode, which must be optically absorptive, chemically stable, and possess the required electronic band alignment with respect to the redox couple of the electrolyte to drive the relevant electrochemical reactions. After many decades of investigation, the primary technological obstacle remains the development of photoelectrode structures capable of efficient and stable conversion of light with visible frequencies, which is abundant in the solar spectrum. Metal oxides represent one of the few material classes that can be made photoactive and remain stable to perform the required functions. The unique range of functional properties of oxides, and especially the oxides of transition metals, relates to their associated diversity of cation oxidation states, cation electronic configurations, and crystal structures. In this dissertation, the use of metal oxide films, nanomaterials, and heterostructures in photoelectrodes enabling the solar-driven oxidation of water and generation of hydrogen fuel is examined. A range of transition- and post-transition-metal oxide material systems and nanoscale architectures is presented. The first chapters present results related to electrodes based on alpha-phase iron(III) oxide, a promising visible-light-active material widely investigated for this application. Studies of porous films fabricated by physical vapor deposition reveal the importance of structural quality, as determined by the deposition substrate temperature, on photoelectrochemical performance. Heterostructures with nanoscale feature dimensionality are explored and reviewed in a later chapter

  13. Scanning probe microscopy investigation of complex-oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Bi, Feng

    Advances in the growth of precisely tailored complex-oxide heterostructures have led to new emergent behavior and associated discoveries. One of the most successful examples consists of an ultrathin layer of LaAlO 3 (LAO) deposited on TiO2-terminated SrTiO3 (STO), where a high mobility quasi-two dimensional electron liquid (2DEL) is formed at the interface. Such 2DEL demonstrates a variety of novel properties, including field tunable metal-insulator transition, superconductivity, strong spin-orbit coupling, magnetic and ferroelectric like behavior. Particularly, for 3-unit-cell (3 u.c.) LAO/STO heterostructures, it was demonstrated that a conductive atomic force microscope (c-AFM) tip can be used to "write" or "erase" nanoscale conducting channels at the interface, making LAO/STO a highly flexible platform to fabricate novel nanoelectronics. This thesis is focused on scanning probe microscopy studies of LAO/STO properties. We investigate the mechanism of c-AFM lithography over 3 u.c. LAO/STO in controlled ambient conditions by using a vacuum AFM, and find that the water molecules dissociated on the LAO surface play a critical role during the c-AFM lithography process. We also perform electro-mechanical response measurements over top-gated LAO/STO devices. Simultaneous piezoresponse force microscopy (PFM) and capacitance measurements reveal a correlation between LAO lattice distortion and interfacial carrier density, which suggests that PFM could not only serve as a powerful tool to map the carrier density at the interface but also provide insight into previously reported frequency dependence of capacitance enhancement of top-gated LAO/STO structures. To study magnetism at the LAO/STO interface, magnetic force microscopy (MFM) and magnetoelectric force microscopy (MeFM) are carried out to search for magnetic signatures that depend on the carrier density at the interface. Results demonstrate an electronicallycontrolled ferromagnetic phase on top-gated LAO

  14. Emergent ultrafast phenomena in correlated oxides and heterostructures

    NASA Astrophysics Data System (ADS)

    Gandolfi, M.; Celardo, G. L.; Borgonovi, F.; Ferrini, G.; Avella, A.; Banfi, F.; Giannetti, C.

    2017-03-01

    The possibility of investigating the dynamics of solids on timescales faster than the thermalization of the internal degrees of freedom has disclosed novel non-equilibrium phenomena that have no counterpart at equilibrium. Transition metal oxides (TMOs) provide an interesting playground in which the correlations among the charges in the metal d-orbitals give rise to a wealth of intriguing electronic and thermodynamic properties involving the spin, charge, lattice and orbital orders. Furthermore, the physical properties of TMOs can be engineered at the atomic level, thus providing the platform to investigate the transport phenomena on timescales of the order of the intrinsic decoherence time of the charge excitations. Here, we review and discuss three paradigmatic examples of transient emerging properties that are expected to open new fields of research: (i) the creation of non-thermal magnetic states in spin–orbit Mott insulators; (ii) the possible exploitation of quantum paths for the transport and collection of charge excitations in heterostructures; (iii) the transient wave-like behavior of the temperature field in strongly anisotropic TMOs.

  15. Atomic Scale Chemical and Structural Characterization of Ceramic Oxide Heterostructure Interfaces

    SciTech Connect

    Singh, R. K.

    2003-04-16

    The research plan was divided into three tasks: (a) growth of oxide heterostructures for interface engineering using standard thin film deposition techniques, (b) atomic level characterization of oxide heterostructure using such techniques as STEM-2 combined with AFM/STM and conventional high-resolution microscopy (HRTEM), and (c) property measurements of aspects important to oxide heterostructures using standard characterization methods, including dielectric properties and dynamic cathodoluminescence measurements. Each of these topics were further classified on the basis of type of oxide heterostructure. Type I oxide heterostructures consisted of active dielectric layers, including the materials Ba{sub x}Sr{sub 1-x}TiO{sub 3} (BST), Y{sub 2}O{sub 3} and ZrO{sub 2}. Type II heterostructures consisted of ferroelectric active layers such as lanthanum manganate and Type III heterostructures consist of phosphor oxide active layers such as Eu-doped Y{sub 2}O{sub 3}.

  16. Multifunctional heterostructures comprised of carbon and metal nanostructures: growth mechanisms, plasmonic modeling, and applications

    NASA Astrophysics Data System (ADS)

    Wu, Junchi

    Noble metal nanoparticles were synthesized by either nucleation in solution or dewetting from thin metal films, and further oxidized to create a thin surface oxide shell. A detailed analysis of surface oxidation of noble metal nanoparticles is presented in this dissertation. This study allowed for utilizing these nanoparticles with controlled surface oxide to result in the growth of graphene shells around noble metal nanoparticles in a chemical vapor deposition process. Oxidation kinetics of noble metal nanoparticles was studied by combining electron microscopy and x-ray photoelectron spectroscopy techniques. This was further correlated with the growth of graphene shells and thicker oxide shell resulted in larger number of graphene layers. In regard to explore their applications, graphene shells encapsulated nanoparticles were demonstrated as a unique plasmonic substrates and catalytic substrates. Plasmonic modeling was done by discrete dipole approximation, simulated and explored the optical properties of graphene shells encapsulated noble metal nanostructures. This approach of graphene shells growth around noble metal nanoparticles was further exploited to understand the role of catalytic noble metal morphology and thus, detailed investigation of the CVD growth of graphene shells around segmented nanowire system was conducted. It was observed that graphene shells were grown around metal nanowires. However, the melting of the nanowires during the growth process must be carefully controlled. This further lead to complex nanowire heterostructures and their incorporation into polymer for bio-applications as demonstrated in this dissertation.

  17. Investigation of 'surface donors' in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

    NASA Astrophysics Data System (ADS)

    Ťapajna, M.; Stoklas, R.; Gregušová, D.; Gucmann, F.; Hušeková, K.; Haščík, Š.; Fröhlich, K.; Tóth, L.; Pécz, B.; Brunner, F.; Kuzmík, J.

    2017-12-01

    III-N surface polarization compensating charge referred here to as 'surface donors' (SD) was analyzed in Al2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) heterojunctions using scaled oxide films grown by metal-organic chemical vapor deposition at 600 °C. We systematically investigated impact of HCl pre-treatment prior to oxide deposition and post-deposition annealing (PDA) at 700 °C. SD density was reduced down to 1.9 × 1013 cm-2 by skipping HCl pre-treatment step as compared to 3.3 × 1013 cm-2 for structures with HCl pre-treatment followed by PDA. The nature and origin of SD was then analyzed based on the correlation between electrical, micro-structural, and chemical properties of the Al2O3/GaN interfaces with different SD density (NSD). From the comparison between distributions of interface traps of MOS heterojunction with different NSD, it is demonstrated that SD cannot be attributed to interface trapped charge. Instead, variation in the integrity of the GaOx interlayer confirmed by X-ray photoelectron spectroscopy is well correlated with NSD, indicating SD may be formed by border traps at the Al2O3/GaOx interface.

  18. Generalized Redox-Responsive Assembly of Carbon-Sheathed Metallic and Semiconducting Nanowire Heterostructures.

    PubMed

    Choi, Sinho; Kim, Jieun; Hwang, Dae Yeon; Park, Hyungmin; Ryu, Jaegeon; Kwak, Sang Kyu; Park, Soojin

    2016-02-10

    One-dimensional metallic/semiconducting materials have demonstrated as building blocks for various potential applications. Here, we report on a unique synthesis technique for redox-responsive assembled carbon-sheathed metal/semiconducting nanowire heterostructures that does not require a metal catalyst. In our approach, germanium nanowires are grown by the reduction of germanium oxide particles and subsequent self-catalytic growth during the thermal decomposition of natural gas, and simultaneously, carbon sheath layers are uniformly coated on the nanowire surface. This process is a simple, reproducible, size-controllable, and cost-effective process whereby most metal oxides can be transformed into metallic/semiconducting nanowires. Furthermore, the germanium nanowires exhibit stable chemical/thermal stability and outstanding electrochemical performance including a capacity retention of ∼96% after 1200 cycles at the 0.5-1C rate as lithium-ion battery anode.

  19. High-frequency dynamics of hybrid oxide Josephson heterostructures

    NASA Astrophysics Data System (ADS)

    Komissinskiy, P.; Ovsyannikov, G. A.; Constantinian, K. Y.; Kislinski, Y. V.; Borisenko, I. V.; Soloviev, I. I.; Kornev, V. K.; Goldobin, E.; Winkler, D.

    2008-07-01

    We summarize our results on Josephson heterostructures Nb/Au/YBa2Cu3Ox that combine conventional (S) and oxide high- Tc superconductors with a dominant d -wave symmetry of the superconducting order parameter (D). The heterostructures were fabricated on (001) and (1 1 20) YBa2Cu3Ox films grown by pulsed laser deposition. The structural and surface studies of the (1 1 20) YBa2Cu3Ox thin films reveal nanofaceted surface structure with two facet domain orientations, which are attributed as (001) and (110)-oriented surfaces of YBa2Cu3Ox and result in S/D(001) and S/D(110) nanojunctions formed on the facets. Electrophysical properties of the Nb/Au/YBa2Cu3Ox heterostructures are investigated by the electrical and magnetic measurements at low temperatures and analyzed within the faceting scenario. The superconducting current-phase relation (CPR) of the heterostructures with finite first and second harmonics is derived from the Shapiro steps, which appear in the I-V curves of the heterostructures irradiated at frequencies up to 100 GHz. The experimental positions and amplitudes of the Shapiro steps are explained within the modified resistive Josephson junction model, where the second harmonic of the CPR and capacitance of the Josephson junctions are taken into account. We experimentally observe a crossover from a lumped to a distributed Josephson junction limit for the size of the heterostructures smaller than Josephson penetration depth. The effect is attributed to the variations of the harmonics of the superconducting CPR across the heterojunction, which may give rise to splintered vortices of magnetic flux quantum. Our investigations of parameters and phenomena that are specific for superconductors having d -wave symmetry of the superconducting order parameter may be of importance for applications such as high-frequency detectors and novel elements of a possible quantum computer.

  20. Optical spectroscopy of nanoscale and heterostructured oxides

    NASA Astrophysics Data System (ADS)

    Senty, Tess R.

    Through careful analysis of a material's properties, devices are continually getting smaller, faster and more efficient each day. Without a complete scientific understanding of material properties, devices cannot continue to improve. This dissertation uses optical spectroscopy techniques to understand light-matter interactions in several oxide materials with promising uses mainly in light harvesting applications. Linear absorption, photoluminescence and transient absorption spectroscopy are primarily used on europium doped yttrium vanadate nanoparticles, copper gallium oxide delafossites doped with iron, and cadmium selenide quantum dots attached to titanium dioxide nanoparticles. Europium doped yttrium vanadate nanoparticles have promising applications for linking to biomolecules. Using Fourier-transform infrared spectroscopy, it was shown that organic ligands (benzoic acid, 3-nitro 4-chloro-benzoic acid and 3,4-dihydroxybenzoic acid) can be attached to the surface of these molecules using metal-carboxylate coordination. Photoluminescence spectroscopy display little difference in the position of the dominant photoluminescence peaks between samples with different organic ligands although there is a strong decrease in their intensity when 3,4-dihydroxybenzoic acid is attached. It is shown that this strong quenching is due to the presence of high-frequency hydroxide vibrational modes within the organic linker. Ultraviolet/visible linear absorption measurements on delafossites display that by doping copper gallium oxide with iron allows for the previously forbidden fundamental gap transition to be accessed. Using tauc plots, it is shown that doping with iron lowers the bandgap from 2.8 eV for pure copper gallium oxide, to 1.7 eV for samples with 1 -- 5% iron doping. Using terahertz transient absorption spectroscopy measurements, it was also determined that doping with iron reduces the charge mobility of the pure delafossite samples. A comparison of cadmium selenide

  1. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures.

    SciTech Connect

    Veal, Boyd W.; Kim, Seong Keun; Zapol, Peter; Iddir, Hakim; Baldo, Peter M.; Eastman, Jeffrey A.

    2016-06-01

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic activity. Here we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behaviour is dependent on interface properties and is attained without cation doping or changes in the gas environment.

  2. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

    SciTech Connect

    Veal, Boyd W.; Kim, Seong Keun; Zapol, Peter; Iddir, Hakim; Baldo, Peter M.; Eastman, Jeffrey A.

    2016-06-10

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behavior, large changes in metal-insulator transition temperatures, or enhanced catalytic activity. Here in this paper, we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behavior is dependent on interface properties and is attained without cation doping or changes in the gas environment.

  3. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

    DOE PAGES

    Veal, Boyd W.; Kim, Seong Keun; Zapol, Peter; ...

    2016-06-10

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behavior, large changes in metal-insulator transition temperatures, or enhanced catalytic activity. Here in this paper, we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) dopingmore » of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behavior is dependent on interface properties and is attained without cation doping or changes in the gas environment.« less

  4. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures.

    PubMed

    Veal, Boyd W; Kim, Seong Keun; Zapol, Peter; Iddir, Hakim; Baldo, Peter M; Eastman, Jeffrey A

    2016-06-10

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic activity. Here we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behaviour is dependent on interface properties and is attained without cation doping or changes in the gas environment.

  5. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

    PubMed Central

    Veal, Boyd W.; Kim, Seong Keun; Zapol, Peter; Iddir, Hakim; Baldo, Peter M.; Eastman, Jeffrey A.

    2016-01-01

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic activity. Here we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behaviour is dependent on interface properties and is attained without cation doping or changes in the gas environment. PMID:27283250

  6. Dynamic Feedback in Ferromagnet-Spin Hall Metal Heterostructures

    NASA Astrophysics Data System (ADS)

    Cheng, Ran; Zhu, Jian-Gang; Xiao, Di

    2016-08-01

    In ferromagnet-normal-metal heterostructures, spin pumping and spin-transfer torques are two reciprocal processes that occur concomitantly. Their interplay introduces a dynamic feedback effect interconnecting energy dissipation channels of both magnetization and current. By solving the spin diffusion process in the presence of the spin Hall effect in the normal metal, we show that the dynamic feedback gives rise to (i) a nonlinear magnetic damping that is crucial to sustain uniform steady-state oscillations of a spin Hall oscillator at large angles and (ii) a frequency-dependent spin Hall magnetoimpedance that reduces to the spin Hall magnetoresistance in the dc limit.

  7. High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistors

    NASA Astrophysics Data System (ADS)

    Lee, Jae-Gil; Kim, Hyun-Seop; Seo, Kwang-Seok; Cho, Chun-Hyung; Cha, Ho-Young

    2016-08-01

    A high quality SiO2 deposition process using a plasma enhanced chemical vapor deposition system has been developed for the gate insulator process of normally-off recessed-gate AlGaN/GaN metal-oxide-semiconductor-heterostructure field-effect transistors (MOS-HFETs). SiO2 films were deposited by using SiH4 and N2O mixtures as reactant gases. The breakdown field increased with increasing the N2O flow rate. The optimum SiH4/N2O ratio was 0.05, which resulted in a maximum breakdown field of 11 MV/cm for the SiO2 film deposited on recessed GaN surface. The deposition conditions were optimized as follows; a gas flow rate of SiH4/N2O (=27/540 sccm), a source RF power of 100 W, a pressure of 2 Torr, and a deposition temperature of 350 °C. A fabricated normally-off MOS-HFET exhibited a threshold voltage of 3.2 V, a specific on-resistance of 4.46 mΩ cm2, and a breakdown voltage of 810 V.

  8. Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors

    NASA Astrophysics Data System (ADS)

    Capriotti, M.; Bahat Treidel, E.; Fleury, C.; Bethge, O.; Ostermaier, C.; Rigato, M.; Lancaster, S. L. C.; Brunner, F.; Detz, H.; Hilt, O.; Würfl, J.; Pogany, D.; Strasser, G.

    2016-11-01

    We perform a comprehensive electrical transport and physical characterization of metal oxide semiconductor heterostructure field effect transistors with ZrO2 gate dielectrics, having partially (referred here as MOS-HFET) and fully (here called true-MOS-FET) recessed GaN/AlGaN/GaN barrier, giving normally-on and normally-off behavior, respectively. The mobility of the MOS-HFETs decreases with the proximity of the Coulomb scattering centers, situated at the ZrO2/AlGaN interface. The effect of the etching procedure and ZrO2 deposition on the formation of the interfacial charges, Nint, is evaluated by X-ray Photoelectron Spectroscopy and by fitting the threshold voltage values to numerical model. For the both device types, the extracted value of Nint lies within 15% around 2.8 × 1013 cm-2, which is of the order of polarization charge, showing that our low-damage three step etching procedure does not introduce extra interface states.

  9. Zinc-oxide-based nanostructured materials for heterostructure solar cells

    SciTech Connect

    Bobkov, A. A.; Maximov, A. I.; Moshnikov, V. A. Somov, P. A.; Terukov, E. I.

    2015-10-15

    Results obtained in the deposition of nanostructured zinc-oxide layers by hydrothermal synthesis as the basic method are presented. The possibility of controlling the structure and morphology of the layers is demonstrated. The important role of the procedure employed to form the nucleating layer is noted. The faceted hexagonal nanoprisms obtained are promising for the fabrication of solar cells based on oxide heterostructures, and aluminum-doped zinc-oxide layers with petal morphology, for the deposition of an antireflection layer. The results are compatible and promising for application in flexible electronics.

  10. Spirals and skyrmions in two-dimensional oxide heterostructures (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Li, Xiaopeng; Liu, W. Vincent; Balents, Leon

    2015-09-01

    Metallic interfaces between insulating oxides such as STO-LAO or STO-GTO provide a versatile platform to study two dimensional electron liquids. Numerous experiments have observed magnetism and significant spin-orbit effects in such structures. We construct the general free energy governing long-wavelength magnetism in two-dimensional oxide heterostructures, which applies irrespective of the microscopic mechanism for magnetism. This leads, in the relevant regime of weak but non-negligible spin-orbit coupling, to a rich phase diagram containing in-plane ferromagnetic, spiral, cone, and skyrmion lattice phases, as well as a nematic state stabilized by thermal fluctuations.

  11. Relationship between Microstructure and Electrical Transport in Resistance Switching Oxide Heterostructures

    NASA Astrophysics Data System (ADS)

    D'Aquila, Kenneth F.

    Understanding the microscopic origin of resistance switching in metal/oxide/metal heterostructures is a crucial step for controlling the fundamental behavior and for enabling applications in non-volatile memory. The formation of nanoscale conducting filaments that bridge across the oxide layer has become a well-accepted model for resistance switching, but the composition of the filaments, their formation mechanism, and the dependence of the filament formation on the as-deposited microstructure and composition is still being explored in different material systems. In this work, we have examined the resistance switching mechanism in a variety of transition metal oxide-based heterostructures including Pt/CuO/Pt, Pt/NiO/Pt, Pt/WOx/W, Pt/TiO2/Pt, and W/HfO2/TiN. For each material system, the microstructural and compositional changes caused by the initial electroforming process and the subsequent resistance switching have been correlated with electrical transport properties using in-situ TEM biasing, hard x-ray nanoprobe analysis, and conductance AFM techniques. In multiple systems, we found that electroforming produces conducting filaments composed of partially-reduced oxide instead of metal, a result that has not been widely reported for oxides such as NiO that don't have sub-oxides under standard conditions. However, we also found significant variability in the electroforming and switching behavior for all the material systems studied. Improved control of the uniformity of initial microstructure and composition will be necessary to identify the microscopic origins of resistance switching using the methods described in this thesis.

  12. Artificial Oxide Heterostructures with Tunable Band Gap

    DTIC Science & Technology

    2016-12-21

    exchange interaction is crucially dependent on the hybridization between the magnetic cation and its surrounding oxygen cage. The above is an...distortion through the metal- oxygen bonding angles and lengths. By using the coupling between magnetic and the ferroelectric orderings, the band structure...magnetic cation and its surrounding oxygen cage. The above is an electronic band structure property including both the valence and conduction bands, as

  13. Metal oxide films on metal

    DOEpatents

    Wu, Xin D.; Tiwari, Prabhat

    1995-01-01

    A structure including a thin film of a conductive alkaline earth metal oxide selected from the group consisting of strontium ruthenium trioxide, calcium ruthenium trioxide, barium ruthenium trioxide, lanthanum-strontium cobalt oxide or mixed alkaline earth ruthenium trioxides thereof upon a thin film of a noble metal such as platinum is provided.

  14. Functional two-dimensional electronic gases at interfaces of oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Wang, Yong

    2011-12-01

    A quasi-two dimensional electron gas (2DEG) in oxide heterostructures such as LaAlO3/SrTiO3 has unique properties that are promising for applications in all-oxide electronic devices. In this dissertation, we focus on understanding and predicting novel properties of the 2DEG by performing first-principles electronic calculations within the frame work of density-functional theory (DFT). The investigation is made upon adding new functionalities in oxide heterostructures, such as ferroelectric polarization, epitaxial strain, and spin polarization that can be employed to control 2DEG properties. Based on first-principles calculations the effects of different polarization magnitudes and alignments in all-oxide heterostructures incorporating different ferroelectric constituents, such as KNbO3/ATiO3 (A = Sr, Ba, Pb), are investigated. It is found that screening charge at the interface that counteracts the depolarizing electric field in the ferroelectric material significantly changes the free electron density of 2DEG at the interface. Using this mechanism, nonvolatile metal-insulating transition can be achieved at the interface by switching the ferroelectric spontaneous polarization. Growing on different substrates, LaAlO3/SrTiO3 heterostructures experience different epitaxial strains. Our first-principles calculations reveal that compressive epitaxial strain introduces a polarization in SrTiO3 pointing away from the interface, which is consistent with the experimental observations. This polarization strongly affects the 2DEG carrier density through a polarization charge formed at the interface. Our theoretical investigation finds that the critical thickness to form a 2DEG at the interface of the heterostructure increases with the compressive strain, while the saturated carrier density decreases which is consistent with the experimental results. Adding a spin degree of freedom to 2DEG may be interesting for the application of 2DEGs in a spintronic device. We explore a La

  15. Nanoscale nickel oxide/nickel heterostructures for active hydrogen evolution electrocatalysis

    NASA Astrophysics Data System (ADS)

    Gong, Ming; Zhou, Wu; Tsai, Mon-Che; Zhou, Jigang; Guan, Mingyun; Lin, Meng-Chang; Zhang, Bo; Hu, Yongfeng; Wang, Di-Yan; Yang, Jiang; Pennycook, Stephen J.; Hwang, Bing-Joe; Dai, Hongjie

    2014-08-01

    Active, stable and cost-effective electrocatalysts are a key to water splitting for hydrogen production through electrolysis or photoelectrochemistry. Here we report nanoscale nickel oxide/nickel heterostructures formed on carbon nanotube sidewalls as highly effective electrocatalysts for hydrogen evolution reaction with activity similar to platinum. Partially reduced nickel interfaced with nickel oxide results from thermal decomposition of nickel hydroxide precursors bonded to carbon nanotube sidewalls. The metal ion-carbon nanotube interactions impede complete reduction and Ostwald ripening of nickel species into the less hydrogen evolution reaction active pure nickel phase. A water electrolyzer that achieves ~20 mA cm-2 at a voltage of 1.5 V, and which may be operated by a single-cell alkaline battery, is fabricated using cheap, non-precious metal-based electrocatalysts.

  16. Gold nanocatalysts supported on heterostructured PbSO4-MCF mesoporous materials for CO oxidation

    SciTech Connect

    Li, Lin; Tian, Chengcheng; Chai, Songhai; Binder, Andrew J; Brown, Suree; Veith, Gabriel M; Dai, Sheng

    2014-01-01

    Metal oxides are commonly used as the supports of gold nanoparticles for catalytic CO oxidation, whereas metal salts are rarely considered suitable supports. In the present work, we developed a new kind of gold nanocatalyst supported on heterostructured PbSO4-MCF mesoporous materials that was prepared by an in situ growth method using dodecylbenzenesulfonate (SOBS) as a sulfonate precursor. It was found that an Au/PbSO4-MCF (SDBS) catalyst preheated at 300 degrees C showed high CO conversion below 100 degrees C. In addition, the stability of selected catalysts was studied as a function of time on stream. Because of the alteration of surface properties, these Au nanocatalysts were highly sinter-resistant. Published by Elsevier B.V.

  17. Impact of GaN cap on charges in Al₂O₃/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

    SciTech Connect

    Ťapajna, M. Jurkovič, M.; Válik, L.; Haščík, Š.; Gregušová, D.; Kuzmík, J.; Brunner, F.; Cho, E.-M.; Hashizume, T.

    2014-09-14

    Oxide/semiconductor interface trap density (D{sub it}) and net charge of Al₂O₃/(GaN)/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) structures with and without GaN cap were comparatively analyzed using comprehensive capacitance measurements and simulations. D{sub it} distribution was determined in full band gap of the barrier using combination of three complementary capacitance techniques. A remarkably higher D{sub it} (∼5–8 × 10¹²eV⁻¹ cm⁻²) was found at trap energies ranging from EC-0.5 to 1 eV for structure with GaN cap compared to that (D{sub it} ∼ 2–3 × 10¹²eV⁻¹ cm⁻²) where the GaN cap was selectively etched away. D{sub it} distributions were then used for simulation of capacitance-voltage characteristics. A good agreement between experimental and simulated capacitance-voltage characteristics affected by interface traps suggests (i) that very high D{sub it} (>10¹³eV⁻¹ cm⁻²) close to the barrier conduction band edge hampers accumulation of free electron in the barrier layer and (ii) the higher D{sub it} centered about EC-0.6 eV can solely account for the increased C-V hysteresis observed for MOS-HEMT structure with GaN cap. Analysis of the threshold voltage dependence on Al₂O₃ thickness for both MOS-HEMT structures suggests that (i) positive charge, which compensates the surface polarization, is not necessarily formed during the growth of III-N heterostructure, and (ii) its density is similar to the total surface polarization charge of the GaN/AlGaN barrier, rather than surface polarization of the top GaN layer only. Some constraints for the positive surface compensating charge are discussed.

  18. Conduction mechanisms in silicon-polymer-metal heterostructures

    SciTech Connect

    Salikhov, R. B. Lachinov, A. N.; Rakhmeev, R. G.

    2007-10-15

    Conduction mechanisms in thin films of wide-gap polymers in silicon-based heterostructures have been experimentally studied. Measuring the temperature dependence of the current-voltage characteristics of samples in the temperature range 80-300 K was used as the basic method. Multilayer Si-SiO{sub 2}-polymer-metal structures were prepared for measurements. Films of poly(diphenylene phthalide), in which a transition from the insulating to a highly conducting state is observed, were used as polymeric layers. The results obtained were used to explain the features of the charge transport in the samples in terms of the hopping conductivity via trap levels, Schottky emission, and field-assisted tunneling emission.

  19. Observation of Interlayer Phonons in Transition Metal Dichalcogenide Heterostructures

    NASA Astrophysics Data System (ADS)

    He, Rui; Ye, Zhipeng; Ji, Chao; Means-Shively, Casie; Anderson, Heidi; Kidd, Tim; Chiu, Kuan-Chang; Chou, Cheng-Tse; Wu, Jenn-Ming; Lee, Yi-Hsien; Andersen, Trond; Lui, Chun Hung

    Interlayer phonon modes in transition metal dichalcogenide (TMD) heterostructures are observed for the first time. We measured the low-frequency Raman response of MoS2/WSe2 and MoSe2/MoS2 heterobilayers. We discovered a distinct Raman mode (30 - 35 cm-1) that cannot be found in any individual monolayers. By comparing with Raman spectra of Bernal bilayer (2L) MoS2, 2L MoSe2 and 2L WSe2, we identified the new Raman mode as the layer breathing vibration arising from the vertical displacement of the two TMD layers. The layer breathing mode (LBM) only emerges in bilayer regions with atomically close layer-layer proximity and clean interface. In addition, the LBM frequency exhibits noticeable dependence on the rotational angle between the two TMD layers, which implies a change of interlayer separation and interlayer coupling strength with the layer stacking.

  20. Integration of Multifunctional Epitaxial Oxide Heterostructures with Si(001)

    NASA Astrophysics Data System (ADS)

    Singamaneni, Srinivasa Rao; Prater, John; Narayan, Jay

    Multifunctional heterostructures exhibit a wide range of functional properties, including colossal magneto-resistance, multiferroic behavior, and spin, charge, and orbital ordering. However, putting this functionality to work remains a challenge. To date, most of the previous works reported in the literature have dealt with heterostructures deposited on closely lattice matched (using lattice matching epitaxy-LME) insulating substrates such as DyScO3, NdGaO3, MgO, SrTiO3 and MBE-grown STO buffered Si(100). This presentation discusses the major advances in the integration of multifunctional oxide materials onto ubiquitous silicon semiconductor platform reported1-6 in the recent past by the presenting authors using a novel thin film growth approach, called `domain matching epitaxy'(DME), which minimizes the strain and nucleation of unwanted defects. The DME paradigm has been used across the large misfit scale (7-25%). Of particular interest, thin film heterostructures including two-phase multiferroics such as BiFeO3(BFO)/La0.7Sr0.3MnO3 (LSMO), BaTiO3(BTO)/LSMO, and LSMO/SrRuO3(SRO). These significant materials advancements may herald a flurry of exciting new advances in CMOS-compatible multifunctional devices.1S. S. Rao,et al.,Nano Letters 13, 5814 (2013); J. Appl. Phys., 116, 094103 (2014); J. Appl. Phys., 116, 224104 (2014); J. Appl. Phys., 117, 17D908 (2015); 5J. Appl. Phys., 117, 17B711 (2015); 6Current Opinion in Solid State and Materials Science. 19, 301-304 (2015).

  1. Hybrid Molecular Beam Epitaxy of Complex Oxide Heterostructures with Ultrahigh Electron Density

    NASA Astrophysics Data System (ADS)

    Xu, Peng

    Two-dimensional electron gases (2DEG) at complex oxide interfaces have attracted lots of attention for fundamental physics studies and potential applications in novel oxidebased electronics. While most researches focuses on LaAlO3/SrTiO3 heterostructures, many interesting phenomena were also discovered at titanates heterostructures, such as LaTiO 3/SrTIO3 and GdTiO3/SrTiO3. In this study, we chose another material system, NdTiO3/SrTiO 3, to investigate the 2DEG at the interfaces. NdTiO3 and SrTiO3 thin films and heterostructures were grown using the hybrid molecular beam epitaxy approach. 3x14 cm-2 (0.5 e-/u.c.) was realized at NdTiO3/SrTiO 3 interfaces, and precise control of carrier density and metal-to-insulator transition were achieved by intentionally introducing Nd vacancies. Moreover, ultrahigh carrier density (˜1015cm -2) was discovered by band engineering NdTiO3/SrTiO 3 heterostructures. The charge transfer model was proposed to explain such high carrier density. Both experimental results and computational modeling suggest the broken-gap type band offset drives charge transfer from NdTiO 3 to SrTiO3. Finally, we will also discuss environmental oxygen effects on electronic transport properties of NdTiO3/SrTiO 3.

  2. X-ray photoelectron spectroscopy and diffraction investigation of a metal-oxide-semiconductor heterostructure: Pt/Gd2O3/Si(111)

    NASA Astrophysics Data System (ADS)

    Ferrah, D.; El Kazzi, M.; Niu, G.; Botella, C.; Penuelas, J.; Robach, Y.; Louahadj, L.; Bachelet, R.; Largeau, L.; Saint-Girons, G.; Liu, Q.; Vilquin, B.; Grenet, G.

    2015-04-01

    Platinum thin films deposited by physical vapor deposition (PVD) on Gd2O3/Si(111) templates are investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and X-ray photoelectron diffraction (XPD). Both XRD and XPD give clear evidence that Gd2O3 grows (111)-oriented and single-domain on Si(111) with mirror epitaxial relationship viz., [1bar10] Gd2O3(111)//[11bar0] Si(111). On Gd2O3/Si(111), Pt is partially crystallized with (111) orientation. There are two epitaxial domains and a slightly visible (111) fiber texture. The in-plane relationships of these Pt(111) domains with Gd2O3(111) are a direct one: [11bar0] Pt(111)//[11bar0] Gd2O3(111) and a mirror one: [1bar10] Pt(111)//[11bar0] Gd2O3(111). XPS reveals that Pt4f exhibits a metallic behavior even for small amounts of Pt but very small chemical shifts suggest that Pt environment is different at the interface with Gd2O3. These XPS chemical shifts have been correlated with features in XPD azimuth curves, which could be related with the existence of hexagonal α-PtO2(0001)layer.

  3. Controlled fabrication of photoactive copper oxide-cobalt oxide nanowire heterostructures for efficient phenol photodegradation.

    PubMed

    Shi, Wenwu; Chopra, Nitin

    2012-10-24

    Fabrication of oxide nanowire heterostructures with controlled morphology, interface, and phase purity is critical for high-efficiency and low-cost photocatalysis. Here, we have studied the formation of copper oxide-cobalt nanowire heterostructures by sputtering and subsequent air annealing to result in cobalt oxide (Co(3)O(4))-coated CuO nanowires. This approach allowed fabrication of standing nanowire heterostructures with tunable compositions and morphologies. The vertically standing CuO nanowires were synthesized in a thermal growth method. The shell growth kinetics of Co and Co(3)O(4) on CuO nanowires, morphological evolution of the shell, and nanowire self-shadowing effects were found to be strongly dependent on sputtering duration, air-annealing conditions, and alignment of CuO nanowires. Finite element method (FEM) analysis indicated that alignment and stiffness of CuO-Co nanowire heterostructures greatly influenced the nanomechanical aspects such as von Mises equivalent stress distribution and bending of nanowire heterostructures during the Co deposition process. This fundamental knowledge was critical for the morphological control of Co and Co(3)O(4) on CuO nanowires with desired interfaces and a uniform coating. Band gap energies and phenol photodegradation capability of CuO-Co(3)O(4) nanowire heterostructures were studied as a function of Co(3)O(4) morphology. Multiple absorption edges and band gap tailings were observed for these heterostructures, indicating photoactivity from visible to UV range. A polycrystalline Co(3)O(4) shell on CuO nanowires showed the best photodegradation performance (efficiency ~50-90%) in a low-powered UV or visible light illumination with a sacrificial agent (H(2)O(2)). An anomalously high efficiency (~67.5%) observed under visible light without sacrificial agent for CuO nanowires coated with thin (∼5.6 nm) Co(3)O(4) shell and nanoparticles was especially interesting. Such photoactive heterostructures demonstrate unique

  4. Metal-cluster-decorated TiO2 nanotube arrays: a composite heterostructure toward versatile photocatalytic and photoelectrochemical applications.

    PubMed

    Xiao, Fang-Xing; Hung, Sung-Fu; Miao, Jianwei; Wang, Hsin-Yi; Yang, Hongbin; Liu, Bin

    2015-02-04

    Recent years have witnessed increasing interest in the solution-phase synthesis of atomically precise thiolate-protected gold clusters (Aux ); nonetheless, research on the photocatalytic properties of Aux -semiconductor nanocomposites is still in its infancy. In this work, recently developed glutathione-capped gold clusters and highly ordered nanoporous layer-covered TiO2 nanotube arrays (NP-TNTAs) are employed as nanobuilding blocks for the construction of a well-defined Aux /NP-TNTA heterostructure via a facile electrostatic self-assembly strategy. Versatile photocatalytic performances of the Aux /NP-TNTA heterostructure which acts as a model catalyst, including photocatalytic oxidation of organic pollutant, photocatalytic reduction of aromatic nitro compounds and photoelectrochemical (PEC) water splitting under simulated solar light irradiation, are systematically exploited. It is found that synergistic interaction stemming from monodisperse coverage of Aux clusters on NP-TNTAs in combination with hierarchical nanostructure of NP-TNTAs reinforce light absorption of Aux /NP-TNTA heterostructure especially within visible region, hence contributing to the significantly enhanced photocatalytic and PEC water splitting performances. Moreover, photocatalytic and PEC mechanisms over Aux /NP-TNTA heterostructure are elucidated and corresponding reaction models were presented. It is anticipated that this work could boost new insight for photocatalytic properties of metal-cluster-sensitized semiconductor nanocomposites. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Exciton-polariton condensation in transition metal dichalcogenide bilayer heterostructure

    NASA Astrophysics Data System (ADS)

    Lee, Ki Hoon; Jeong, Jae-Seung; Min, Hongki; Chung, Suk Bum

    For the bilayer heterostructure system in an optical microcavity, the interplay of the Coulomb interaction and the electron-photon coupling can lead to the emergence of quasiparticles consisting of the spatially indirect exciton and cavity photons known as dipolariton, which can form the Bose-Einstein condensate above a threshold density. Additional physics comes into play when each layer of the bilayer system consists of the transition metal dichalcogenide (TMD) monolayer. The TMD monolayer band structure in the low energy spectrum has two valley components with nontrivial Berry phase, which gives rise to a selection rule in the exciton-polariton coupling, e.g. the exciton from one (the other) valley can couple only to the clockwise (counter-clockwise) polarized photon. We investigate possible condensate phases of exciton-polariton in the bilayer TMD microcavity changing relevant parameters such as detuning, excitation density and interlayer distance. This work was supported in part by the Institute for Basic Science of Korea (IBS) under Grant IBS-R009-Y1 and by the National Research Foundation of Korea (NRF) under the Basic Science Research Program Grant No. 2015R1D1A1A01058071.

  6. Spin-Orbit Effects in CoFeB/MgO Heterostructures with Heavy Metal Underlayers

    NASA Astrophysics Data System (ADS)

    Torrejon, Jacob; Kim, Junyeon; Sinha, Jaivardhan; Hayashi, Masamitsu

    2016-10-01

    We study effects originating from the strong spin-orbit coupling in CoFeB/MgO heterostructures with heavy metal (HM) underlayers. The perpendicular magnetic anisotropy at the CoFeB/MgO interface, the spin Hall angle of the heavy metal layer, current induced torques and the Dzyaloshinskii-Moriya interaction at the HM/CoFeB interfaces are studied for films in which the early 5d transition metals are used as the HM underlayer. We show how the choice of the HM layer influences these intricate spin-orbit effects that emerge within the bulk and at interfaces of the heterostructures.

  7. Metal atom oxidation laser

    DOEpatents

    Jensen, R.J.; Rice, W.W.; Beattie, W.H.

    1975-10-28

    A chemical laser which operates by formation of metal or carbon atoms and reaction of such atoms with a gaseous oxidizer in an optical resonant cavity is described. The lasing species are diatomic or polyatomic in nature and are readily produced by exchange or other abstraction reactions between the metal or carbon atoms and the oxidizer. The lasing molecules may be metal or carbon monohalides or monoxides. (auth)

  8. Metal atom oxidation laser

    DOEpatents

    Jensen, R.J.; Rice, W.W.; Beattie, W.H.

    1975-10-28

    A chemical laser which operates by formation of metal or carbon atoms and reaction of such atoms with a gaseous oxidizer in an optical resonant cavity is described. The lasing species are diatomic or polyatomic in nature and are readily produced by exchange or other abstraction reactions between the metal or carbon atoms and the oxidizer. The lasing molecules may be metal or carbon monohalides or monoxides.

  9. Sequence of hole resonances in complex oxide heterostructures.

    PubMed

    Smadici, S; Logvenov, G; Bozovic, I; Abbamonte, P

    2014-04-16

    Resonant soft x-ray scattering measurements at the O K edge on Sr2CuO4-ν/La2NiO4+δ (SCO/LNO) complex oxide superlattices show resonances for holes in the two constituent layers, in a sequence of energy levels. The observation of well defined resonances, on a superlattice with layers one unit cell thick, indicates that the resonance energy is largely unaffected by atoms outside a cluster extending half a unit cell along the c axis, consistent with calculations for bulk materials. Comparison to measurements on related superlattices confirms that the order of resonances at the O K edge reflects the order of hole ground-state energies in the heterostructure buried layers. For the SCO/LNO superlattices, the measurements show that the ground-state energies remain different in very thin SCO and LNO layers, which is a contributing factor when considering electronic reconstruction at interfaces, in addition to the areal density of ionic charges in the atomic planes. Different hole energy levels in the SCO/LNO superlattice also imply that holes do not spread into SCO from LNO layers.

  10. Reactive metal-oxide interfaces: A microscopic view

    NASA Astrophysics Data System (ADS)

    Picone, A.; Riva, M.; Brambilla, A.; Calloni, A.; Bussetti, G.; Finazzi, M.; Ciccacci, F.; Duò, L.

    2016-03-01

    Metal-oxide interfaces play a fundamental role in determining the functional properties of artificial layered heterostructures, which are at the root of present and future technological applications. Magnetic exchange and magnetoelectric coupling, spin filtering, metal passivation, catalytic activity of oxide-supported nano-particles are just few examples of physical and chemical processes arising at metal-oxide hybrid systems, readily exploited in working devices. These phenomena are strictly correlated with the chemical and structural characteristics of the metal-oxide interfacial region, making a thorough understanding of the atomistic mechanisms responsible of its formation a prerequisite in order to tailor the device properties. The steep compositional gradient established upon formation of metal-oxide heterostructures drives strong chemical interactions at the interface, making the metal-oxide boundary region a complex system to treat, both from an experimental and a theoretical point of view. However, once properly mastered, interfacial chemical interactions offer a further degree of freedom for tuning the material properties. The goal of the present review is to provide a summary of the latest achievements in the understanding of metal/oxide and oxide/metal layered systems characterized by reactive interfaces. The influence of the interface composition on the structural, electronic and magnetic properties will be highlighted. Particular emphasis will be devoted to the discussion of ultra-thin epitaxial oxides stabilized on highly oxidizable metals, which have been rarely exploited as oxide supports as compared to the much more widespread noble and quasi noble metallic substrates. In this frame, an extensive discussion is devoted to the microscopic characterization of interfaces between epitaxial metal oxides and the Fe(001) substrate, regarded from the one hand as a prototypical ferromagnetic material and from the other hand as a highly oxidizable metal.

  11. Effective phototransformation in a heterostructure based on copper(I) oxide and cadmium tin oxide

    NASA Astrophysics Data System (ADS)

    Shelovanova, G. N.; Patrusheva, T. N.

    2017-02-01

    We present a heterostructure consisting of anodic copper oxide Cu2O on a copper substrate and a transparent Cd-Sn-O conducting film for use in solar cells. Focusing on simplicity and the availability of film fabrication techniques, we chose anodic oxidation for forming the Cu2O film and the extraction-pyrolysis technique for forming the transparent Cd-Sn-O conducting layer. We demonstrate the possibility of considerable enhancement of the phototransformation efficiency in the Cu-Cu2O/Cd-Sn-O structure over this parameter in the Cu-Cu2O structure.

  12. Van der Waals Epitaxy of Functional Oxide Heterostructures

    NASA Astrophysics Data System (ADS)

    Chu, Ying-Hao

    In the diligent pursuit of low-power consumption, multifunctional, and environmentally friendly electronics, more sophisticated requirements on functional materials are on demand. Recently, the discovery of 2D layered materials has created a revolution to this field. Pioneered by graphene, these new 2D materials exhibit abundant unusual physical phenomena that is undiscovered in bulk forms. These materials are characterized with their layer form and almost pure 2D electronic behavior. The confinement of charge and heat transport at such ultrathin planes offers possibilities to overcome the bottleneck of present device development in thickness limitation, and thus push the technologies into next generation. Van der Waals epitaxy, an epitaxial growth method to combine 2D and 3D materials, is one of current reliable manufacturing processes to fabricate 2D materials by growing these 2D materials epitaxially on 3D materials. Then, transferring the 2D materials to the substrates for practical applications. In the mean time, van der Waals epitaxy has also been used to create free-standing 3D materials by growing 3D materials on 2D materials and then removing them from 2D materials since the interfacial boding between 2D and 3D materials should be weak van der Waals bonds. In this study, we intend to take the same concept, but to integrate a family of functional materials in order to open new avenue to flexible electronics. Due to the interplay of lattice, charge, orbital, and spin degrees of freedom, correlated electrons in oxides generate a rich spectrum of competing phases and physical properties. Recently, lots of studies have suggested that oxide heterostructures provide a powerful route to create and manipulate the degrees of freedom and offer new possibilities for next generation devices, thus create a new playground for researchers to investigate novel physics and the emergence of fascinating states of condensed matter. In this talk, we use a 2D layered material as

  13. Strongly enhanced Rashba splittings in an oxide heterostructure: A tantalate monolayer on BaHfO3

    NASA Astrophysics Data System (ADS)

    Kim, Minsung; Ihm, Jisoon; Chung, Suk Bum

    2016-09-01

    In the two-dimensional electron gas emerging at the transition metal oxide surface and interface, various exotic electronic ordering and topological phases can become experimentally more accessible with the stronger Rashba spin-orbit interaction. Here, we present a promising route to realize significant Rashba-type band splitting using a thin film heterostructure. Based on first-principles methods and analytic model analyses, a tantalate monolayer on BaHfO3 is shown to host two-dimensional bands originating from Ta t2 g states with strong Rashba spin splittings, nearly 10% of the bandwidth, at both the band minima and saddle points. An important factor in this enhanced splitting is the significant t2 g-eg interband coupling, which can generically arise when the inversion symmetry is maximally broken due to the strong confinement of the 2DEG on a transition metal oxide surface. Our results could be useful in realizing topological superconductivity at oxide surfaces.

  14. Fabrication and characterization of oxide-based thin film transistors, and process development for oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Lim, Wantae

    2009-12-01

    This dissertation is focused on the development of thin film transistors (TFTs) using oxide materials composed of post-transitional cations with (n-1)d 10ns0 (n≥4). The goal is to achieve high performance oxide-based TFTs fabricated at low processing temperature on either glass or flexible substrates for next generation display applications. In addition, etching mechanism and Ohmic contact formation for oxide heterostructure (ZnO/CuCrO 2) system is demonstrated. The deposition and characterization of oxide semiconductors (In 2O3-ZnO, and InGaZnO4) using a RF-magnetron sputtering system are studied. The main influence on the resistivity of the films is found to be the oxygen partial pressure in the sputtering ambient. The films remained amorphous and transparent (> 70%) at all process conditions. These films showed good transmittance at suitable conductivity for transistor fabrication. The electrical characteristics of both top- and bottom-gate type Indium Zinc Oxide (InZnO) and Indium Gallium Zinc Oxide (InGaZnO4)-based TFTs are reported. The InZnO films were favorable for depletion-mode TFTs due to their tendency to form oxygen vacancies, while enhancement-mode devices were realized with InGaZnO4 films. The InGaZnO4-based TFTs fabricated on either glass or plastic substrates at low temperature (<100°C) exhibit good electrical properties: the saturation mobility of 5--12 cm2.V-1.s-1 and threshold voltage of 0.5--2.5V. The devices are also examined as a function of aging time in order to verify long-term stability in air. The effect of gate dielectric materials on electrical properties of InGaZnO 4-based TFTs was investigated. The use of SiNx film as a gate dielectric reduces the trap density and the roughness at the channel/gate dielectric interface compared to SiO2 gate dielectric, resulting in an improvement of device parameters by reducing scattering of trapped charges at the interface. The quality of interface is shown to have large effect on TFT performance

  15. TOPICAL REVIEW Ionic conductivity in oxide heterostructures: the role of interfaces

    NASA Astrophysics Data System (ADS)

    Fabbri, Emiliana; Pergolesi, Daniele; Traversa, Enrico

    2010-10-01

    Rapidly growing attention is being directed to the investigation of ionic conductivity in oxide film heterostructures. The main reason for this interest arises from interfacial phenomena in these heterostructures and their applications. Recent results revealed that heterophase interfaces have faster ionic conduction pathways than the bulk or homophase interfaces. This finding can open attractive opportunities in the field of micro-ionic devices. The influence of the interfaces on the conduction properties of heterostructures is becoming increasingly important with the miniaturization of solid-state devices, which leads to an enhanced interface density at the expense of the bulk. This review aims to describe the main evidence of interfacial phenomena in ion-conducting film heterostructures, highlighting the fundamental and technological relevance and offering guidelines to understanding the interface conduction mechanisms in these structures.

  16. Engineering SrTiO3 /LaAlO3 heterostructures thicknessthrough a metallic capping layer electrodes

    NASA Astrophysics Data System (ADS)

    Iori, Federico

    The possibility to achieve conducting and superconducting properties at the interface between two bulk insulator oxides as SrTiO3 (STO) and LaAlO3 (LAO) in 2004 has wide opened the route toward the discovery and control of broad functional emerging properties in different oxides heterostructures. Nonetheless the STO/LAO system still present not clarified questions concerning the possibility to control the presence of the 2DEG at the interface. In this work we present our theoretical results supported by experimental measurementsconcerning the possibility to tune the critical thickness of the LAO topmost layer through the deposition of a metallic capping layer at the surface. Our ab initio Density Functional Theory calculations show how different metallic contact can lead to a reduction of the LAO critical thickness of 4 u.c. still preserving the 2D electronic gas at the interface. UNRAVEL Marie Curie project.

  17. Non-radiative relaxation and rectification behavior of metal/semiconductor tetrapod heterostructures

    SciTech Connect

    Kanta Haldar, Krishna; Kundu, Simanta; Patra, Amitava

    2014-02-10

    The metal-semiconductor hetero-structures have recently emerged as functional materials for their potential applications in the areas of photonic, optoelectronic, and other fields. Here, we discuss the structural characterization of Au/CdSe tetrapod hetero-structures by using high-resolution transmission electron microscope, high angle annular dark field-scanning transmission electron microscopic, and X-ray diffraction. The blue shifting of the plasmonic band and red shifting of the excitonic band suggest a strong surface plasmon-exciton interaction between Au and CdSe in Au/CdSe tetrapod heterostructure. A significant photoluminescence quenching (83.4%) of CdSe nanorod (NR) is observed in the presence of Au nanoparticle in Au/CdSe tetrapod heterostructure. The radiative and nonradiative decay rates of CdSe nanorods are found to be modified in Au/CdSe tetrapod structures and the nonradiative rate changes from 1.91 × 10{sup 7} s{sup −1} to 9.33 × 10{sup 9} s{sup −1} for CdSe NR to Au/CdSe tetrapod structure, respectively. Current-voltage characteristics of Au/CdSe heterostructure exhibit the rectification property with a threshold voltage of about 0.85 V and the rectifying ratio is 140 which can open up avenues for developing challenging devices.

  18. Metal oxide-polymer composites

    NASA Technical Reports Server (NTRS)

    Wellinghoff, Stephen T. (Inventor)

    1994-01-01

    A method of making metal oxide clusters in a single stage by reacting a metal oxide with a substoichiometric amount of an acid in the presence of an oxide particle growth terminator and solubilizer. A method of making a ceramer is also disclosed in which the metal oxide clusters are reacted with a functionalized polymer. The resultant metal oxide clusters and ceramers are also disclosed.

  19. Metal oxide-polymer composites

    NASA Technical Reports Server (NTRS)

    Wellinghoff, Stephen T. (Inventor)

    1997-01-01

    A method of making metal oxide clusters in a single stage by reacting a metal oxide with a substoichiometric amount of an acid in the presence of an oxide particle growth terminator and solubilizer. A method of making a ceramer is also disclosed in which the metal oxide clusters are reacted with a functionalized polymer. The resultant metal oxide clusters and ceramers are also disclosed.

  20. Template-assisted synthesis of III-nitride and metal-oxide nano-heterostructures using low-temperature atomic layer deposition for energy, sensing, and catalysis applications (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Biyikli, Necmi; Ozgit-Akgun, Cagla; Eren, Hamit; Haider, Ali; Uyar, Tamer; Kayaci, Fatma; Guler, Mustafa Ozgur; Garifullin, Ruslan; Okyay, Ali K.; Ulusoy, Gamze M.; Goldenberg, Eda

    2015-08-01

    Recent experimental research efforts on developing functional nanostructured III-nitride and metal-oxide materials via low-temperature atomic layer deposition (ALD) will be reviewed. Ultimate conformality, a unique propoerty of ALD process, is utilized to fabricate core-shell and hollow tubular nanostructures on various nano-templates including electrospun nanofibrous polymers, self-assembled peptide nanofibers, metallic nanowires, and multi-wall carbon nanotubes (MWCNTs). III-nitride and metal-oxide coatings were deposited on these nano-templates via thermal and plasma-enhanced ALD processes with thickness values ranging from a few mono-layers to 40 nm. Metal-oxide materials studied include ZnO, TiO2, HfO2, ZrO2, and Al2O3. Standard ALD growth recipes were modified so that precursor molecules have enough time to diffuse and penetrate within the layers/pores of the nano-template material. As a result, uniform and conformal coatings on high-surface area nano-templates were demonstrated. Substrate temperatures were kept below 200C and within the self-limiting ALD window, so that temperature-sensitive template materials preserved their integrity III-nitride coatings were applied to similar nano-templates via plasma-enhanced ALD (PEALD) technique. AlN, GaN, and InN thin-film coating recipes were optimized to achieve self-limiting growth with deposition temperatures as low as 100C. BN growth took place only for >350C, in which precursor decomposition occured and therefore growth proceeded in CVD regime. III-nitride core-shell and hollow tubular single and multi-layered nanostructures were fabricated. The resulting metal-oxide and III-nitride core-shell and hollow nano-tubular structures were used for photocatalysis, dye sensitized solar cell (DSSC), energy storage and chemical sensing applications. Significantly enhanced catalysis, solar efficiency, charge capacity and sensitivity performance are reported. Moreover, core-shell metal-oxide and III-nitride materials

  1. Extracting metals directly from metal oxides

    DOEpatents

    Wai, Chien M.; Smart, Neil G.; Phelps, Cindy

    1997-01-01

    A method of extracting metals directly from metal oxides by exposing the oxide to a supercritical fluid solvent containing a chelating agent is described. Preferably, the metal is an actinide or a lanthanide. More preferably, the metal is uranium, thorium or plutonium. The chelating agent forms chelates that are soluble in the supercritical fluid, thereby allowing direct removal of the metal from the metal oxide. In preferred embodiments, the extraction solvent is supercritical carbon dioxide and the chelating agent is selected from the group consisting of .beta.-diketones, halogenated .beta.-diketones, phosphinic acids, halogenated phosphinic acids, carboxylic acids, halogenated carboxylic acids, and mixtures thereof. In especially preferred embodiments, at least one of the chelating agents is fluorinated. The method provides an environmentally benign process for removing metals from metal oxides without using acids or biologically harmful solvents. The chelate and supercritical fluid can be regenerated, and the metal recovered, to provide an economic, efficient process.

  2. Extracting metals directly from metal oxides

    DOEpatents

    Wai, C.M.; Smart, N.G.; Phelps, C.

    1997-02-25

    A method of extracting metals directly from metal oxides by exposing the oxide to a supercritical fluid solvent containing a chelating agent is described. Preferably, the metal is an actinide or a lanthanide. More preferably, the metal is uranium, thorium or plutonium. The chelating agent forms chelates that are soluble in the supercritical fluid, thereby allowing direct removal of the metal from the metal oxide. In preferred embodiments, the extraction solvent is supercritical carbon dioxide and the chelating agent is selected from the group consisting of {beta}-diketones, halogenated {beta}-diketones, phosphinic acids, halogenated phosphinic acids, carboxylic acids, halogenated carboxylic acids, and mixtures thereof. In especially preferred embodiments, at least one of the chelating agents is fluorinated. The method provides an environmentally benign process for removing metals from metal oxides without using acids or biologically harmful solvents. The chelate and supercritical fluid can be regenerated, and the metal recovered, to provide an economic, efficient process. 4 figs.

  3. Spin Andreev-like Reflection in Metal-Mott Insulator Heterostructures

    SciTech Connect

    Al-Hassanieh, K. A.; Rincón, Julián; Alvarez, G.; Dagotto, E.

    2015-02-09

    Here we used the time-dependent density-matrix renormalization group (tDMRG) to study the time evolution of electron wave packets in one-dimensional (1D) metal-superconductor heterostructures. The results show Andreev reflection at the interface, as expected. By combining these results with the well-known single- spin-species electron-hole transformation in the Hubbard model, we predict an analogous spin Andreev reflection in metal-Mott insulator heterostructures. This effect is numerically confirmed using 1D tDMRG, but it is expected to also be present in higher dimensions, as well as in more general Hamiltonians. We present an intuitive picture of the spin reflection, analogous to that of Andreev reflection at metal- superconductor interfaces. This allows us to discuss a novel antiferromagnetic proximity effect. Possible experimental realizations are discussed.

  4. Effect of rare earth metal on the spin-orbit torque in magnetic heterostructures

    SciTech Connect

    Ueda, Kohei; Pai, Chi-Feng; Tan, Aik Jun; Mann, Maxwell; Beach, Geoffrey S. D.

    2016-06-06

    We report the effect of the rare earth metal Gd on current-induced spin-orbit torques (SOTs) in perpendicularly magnetized Pt/Co/Gd heterostructures, characterized using harmonic measurements and spin-torque ferromagnetic resonance (ST-FMR). By varying the Gd metal layer thickness from 0 nm to 8 nm, harmonic measurements reveal a significant enhancement of the effective fields generated from the Slonczewski-like and field-like torques. ST-FMR measurements confirm an enhanced effective spin Hall angle and show a corresponding increase in the magnetic damping constant with increasing Gd thickness. These results suggest that Gd plays an active role in generating SOTs in these heterostructures. Our finding may lead to spin-orbitronics device application such as non-volatile magnetic random access memory, based on rare earth metals.

  5. Effect of rare earth metal on the spin-orbit torque in magnetic heterostructures

    NASA Astrophysics Data System (ADS)

    Ueda, Kohei; Pai, Chi-Feng; Tan, Aik Jun; Mann, Maxwell; Beach, Geoffrey S. D.

    2016-06-01

    We report the effect of the rare earth metal Gd on current-induced spin-orbit torques (SOTs) in perpendicularly magnetized Pt/Co/Gd heterostructures, characterized using harmonic measurements and spin-torque ferromagnetic resonance (ST-FMR). By varying the Gd metal layer thickness from 0 nm to 8 nm, harmonic measurements reveal a significant enhancement of the effective fields generated from the Slonczewski-like and field-like torques. ST-FMR measurements confirm an enhanced effective spin Hall angle and show a corresponding increase in the magnetic damping constant with increasing Gd thickness. These results suggest that Gd plays an active role in generating SOTs in these heterostructures. Our finding may lead to spin-orbitronics device application such as non-volatile magnetic random access memory, based on rare earth metals.

  6. Spin Andreev-like Reflection in Metal-Mott Insulator Heterostructures

    DOE PAGES

    Al-Hassanieh, K. A.; Rincón, Julián; Alvarez, G.; ...

    2015-02-09

    Here we used the time-dependent density-matrix renormalization group (tDMRG) to study the time evolution of electron wave packets in one-dimensional (1D) metal-superconductor heterostructures. The results show Andreev reflection at the interface, as expected. By combining these results with the well-known single- spin-species electron-hole transformation in the Hubbard model, we predict an analogous spin Andreev reflection in metal-Mott insulator heterostructures. This effect is numerically confirmed using 1D tDMRG, but it is expected to also be present in higher dimensions, as well as in more general Hamiltonians. We present an intuitive picture of the spin reflection, analogous to that of Andreev reflectionmore » at metal- superconductor interfaces. This allows us to discuss a novel antiferromagnetic proximity effect. Possible experimental realizations are discussed.« less

  7. High ionic conductivity in confined bismuth oxide-based heterostructures

    NASA Astrophysics Data System (ADS)

    Sanna, Simone; Esposito, Vincenzo; Christensen, Mogens; Pryds, Nini

    2016-12-01

    Bismuth trioxide in the cubic fluorite phase ( δ - Bi 2 O 3 ) exhibits the highest oxygen ionic conductivity. In this study, we were able to stabilize the pure δ - Bi 2 O 3 at low temperature with no addition of stabilizer but only by engineering the interface, using highly coherent heterostructures made of alternative layers of δ - Bi 2 O 3 and Yttria Stabilized Zirconia (YSZ), deposited by pulsed laser deposition. The resulting [ δ - Bi 2 O 3 / YSZ ] heterostructures are found to be stable over a wide temperature range (500-750 °C) and exhibits stable high ionic conductivity over a long time comparable to the value of the pure δ - Bi 2 O 3 , which is approximately two orders of magnitude higher than the conductivity of YSZ bulk.

  8. Magnetotransport in heterostructures of transition metal dichalcogenides and graphene

    NASA Astrophysics Data System (ADS)

    Völkl, Tobias; Rockinger, Tobias; Drienovsky, Martin; Watanabe, Kenji; Taniguchi, Takashi; Weiss, Dieter; Eroms, Jonathan

    2017-09-01

    We use a van der Waals pickup technique to fabricate different heterostructures containing WSe2(WS2) and graphene. The heterostructures were structured by plasma etching, contacted by one-dimensional edge contacts, and a top gate was deposited. For graphene /WSe2/SiO2 samples we observe mobilities of ˜12 000 cm2V-1s-1 . Magnetic-field-dependent resistance measurements on these samples show a peak in the conductivity at low magnetic fields. This dip is attributed to the weak antilocalization (WAL) effect, stemming from spin-orbit coupling. Samples where graphene is encapsulated between WSe2(WS2) and hexagonal boron nitride show a much higher mobility of up to ˜120 000 cm2V-1s-1 . However, in these samples no WAL peak can be observed. We attribute this to a transition from the diffusive to the quasiballistic regime. At low magnetic fields a resistance peak appears, which we ascribe to a size effect due to boundary scattering. Shubnikov-de Haas oscillations in fully encapsulated samples show all integer filling factors due to complete lifting of the spin and valley degeneracies.

  9. Methane-Sensing Performance Enhancement in Graphene Oxide/Mg:ZnO Heterostructure Devices

    NASA Astrophysics Data System (ADS)

    Sarkar, Argha; Maity, Santanu; Joseph, Aneesh M.; Chakraborty, S. K.; Thomas, Tiju

    2017-10-01

    Methane-sensing using reduced doped graphene oxide (rGO)/Mg:ZnO heterostructure devices is reported here. All samples are tested with CH4 in dry air ambient by a gas-analyzing set-up. Crystallinity of the sensing film is improved through annealing treatment (at 800°C). The active device area (i.e., the rGO and rGO/Mg:ZnO heterostructures) are characterized using scanning electron microscope imaging, x-ray diffraction, and x-ray spectroscopy measurements. Electrical performance of the fabricated device is optimized. rGO/Mg:ZnO heterostructures are substantially more sensitive and have better transient response than bare rGO-based sensor devices. All fundamental parameters such as sensitivity and response-recovery time are examined and reported in detail.

  10. Ultrathin epitaxial barrier layer to avoid thermally induced phase transformation in oxide heterostructures

    SciTech Connect

    Baek, David J.; Lu, Di; Hikita, Yasuyuki; Hwang, Harold Y.; Kourkoutis, Lena F.

    2016-12-22

    Incorporating oxides with radically different physical and chemical properties into heterostructures offers tantalizing possibilities to derive new functions and structures. Recently, we have fabricated freestanding 2D oxide membranes using the water-soluble perovskite Sr3Al2O6 as a sacrificial buffer layer. Here, with atomic-resolution spectroscopic imaging, we observe that direct growth of oxide thin films on Sr3Al2O6 can cause complete phase transformation of the buffer layer, rendering it water-insoluble. More importantly, we demonstrate that an ultrathin SrTiO3 layer can be employed as an effective barrier to preserve Sr3Al2O6 during subsequent growth, thus allowing its integration in a wider range of oxide heterostructures.

  11. Ultrathin epitaxial barrier layer to avoid thermally induced phase transformation in oxide heterostructures

    DOE PAGES

    Baek, David J.; Lu, Di; Hikita, Yasuyuki; ...

    2016-12-22

    Incorporating oxides with radically different physical and chemical properties into heterostructures offers tantalizing possibilities to derive new functions and structures. Recently, we have fabricated freestanding 2D oxide membranes using the water-soluble perovskite Sr3Al2O6 as a sacrificial buffer layer. Here, with atomic-resolution spectroscopic imaging, we observe that direct growth of oxide thin films on Sr3Al2O6 can cause complete phase transformation of the buffer layer, rendering it water-insoluble. More importantly, we demonstrate that an ultrathin SrTiO3 layer can be employed as an effective barrier to preserve Sr3Al2O6 during subsequent growth, thus allowing its integration in a wider range of oxide heterostructures.

  12. The Growth Mechanism of Transition Metal Dichalcogenides by using Sulfurization of Pre-deposited Transition Metals and the 2D Crystal Hetero-structure Establishment

    PubMed Central

    Wu, Chong-Rong; Chang, Xiang-Rui; Wu, Chao-Hsin; Lin, Shih-Yen

    2017-01-01

    A growth model is proposed for the large-area and uniform MoS2 film grown by using sulfurization of pre-deposited Mo films on sapphire substrates. During the sulfurization procedure, the competition between the two mechanisms of the Mo oxide segregation to form small clusters and the sulfurization reaction to form planar MoS2 film is determined by the amount of background sulfur. Small Mo oxide clusters are observed under the sulfur deficient condition, while large-area and complete MoS2 films are obtained under the sulfur sufficient condition. Precise layer number controllability is also achieved by controlling the pre-deposited Mo film thicknesses. The drain currents in positive dependence on the layer numbers of the MoS2 transistors with 1-, 3- and 5- layer MoS2 have demonstrated small variation in material characteristics between each MoS2 layer prepared by using this growth technique. By sequential transition metal deposition and sulfurization procedures, a WS2/MoS2/WS2 double hetero-structure is demonstrated. Large-area growth, layer number controllability and the possibility of hetero-structure establishment by using sequential metal deposition and following sulfurization procedures have revealed the potential of this growth technique for practical applications. PMID:28176836

  13. The Growth Mechanism of Transition Metal Dichalcogenides by using Sulfurization of Pre-deposited Transition Metals and the 2D Crystal Hetero-structure Establishment

    NASA Astrophysics Data System (ADS)

    Wu, Chong-Rong; Chang, Xiang-Rui; Wu, Chao-Hsin; Lin, Shih-Yen

    2017-02-01

    A growth model is proposed for the large-area and uniform MoS2 film grown by using sulfurization of pre-deposited Mo films on sapphire substrates. During the sulfurization procedure, the competition between the two mechanisms of the Mo oxide segregation to form small clusters and the sulfurization reaction to form planar MoS2 film is determined by the amount of background sulfur. Small Mo oxide clusters are observed under the sulfur deficient condition, while large-area and complete MoS2 films are obtained under the sulfur sufficient condition. Precise layer number controllability is also achieved by controlling the pre-deposited Mo film thicknesses. The drain currents in positive dependence on the layer numbers of the MoS2 transistors with 1-, 3- and 5- layer MoS2 have demonstrated small variation in material characteristics between each MoS2 layer prepared by using this growth technique. By sequential transition metal deposition and sulfurization procedures, a WS2/MoS2/WS2 double hetero-structure is demonstrated. Large-area growth, layer number controllability and the possibility of hetero-structure establishment by using sequential metal deposition and following sulfurization procedures have revealed the potential of this growth technique for practical applications.

  14. Exciton/plasmon mixing in metal-semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Symonds, Clémentine; Bellessa, Joel; Plenet, Jean-Claude; Cambril, Edmond; Miard, Audrey; Ferlazzo, Laurence; Lemaître, Aristide

    2010-01-01

    We report on the strong coupling between surface plasmons and inorganic quantum well excitons. The sample is formed by a corrugated silver film deposited on the top of a heterostructure consisting of five GaAs/GaAlAs quantum wells grown by molecular beam epitaxy. Reflectometry experiments at low temperature (77 K) evidence the formation of plasmon/heavy-hole exciton/light-hole exciton mixed states. The interaction energies, deduced by fitting the experimental data with a coupled oscillator model, amount to 22 meV for the plasmon/light-hole exciton and 21 meV for the plasmon/heavy-hole exciton. Some particularities of the plasmon-exciton coupling are also discussed and qualitatively related to the plasmon polarization.

  15. Efficient photoelectrochemical hydrogen generation using heterostructures of Si and chemically exfoliated metallic MoS2.

    PubMed

    Ding, Qi; Meng, Fei; English, Caroline R; Cabán-Acevedo, Miguel; Shearer, Melinda J; Liang, Dong; Daniel, Andrew S; Hamers, Robert J; Jin, Song

    2014-06-18

    We report the preparation and characterization of highly efficient and robust photocathodes based on heterostructures of chemically exfoliated metallic 1T-MoS2 and planar p-type Si for solar-driven hydrogen production. Photocurrents up to 17.6 mA/cm(2) at 0 V vs reversible hydrogen electrode were achieved under simulated 1 sun irradiation, and excellent stability was demonstrated over long-term operation. Electrochemical impedance spectroscopy revealed low charge-transfer resistances at the semiconductor/catalyst and catalyst/electrolyte interfaces, and surface photoresponse measurements also demonstrated slow carrier recombination dynamics and consequently efficient charge carrier separation, providing further evidence for the superior performance. Our results suggest that chemically exfoliated 1T-MoS2/Si heterostructures are promising earth-abundant alternatives to photocathodes based on noble metal catalysts for solar-driven hydrogen production.

  16. Strain-engineered optoelectronic properties of 2D transition metal dichalcogenide lateral heterostructures

    DOE PAGES

    Lee, Jaekwang; Huang, Jingsong; Sumpter, Bobby G.; ...

    2017-02-17

    Compared with their bulk counterparts, 2D materials can sustain much higher elastic strain at which optical quantities such as bandgaps and absorption spectra governing optoelectronic device performance can be modified with relative ease. Using first-principles density functional theory and quasiparticle GW calculations, we demonstrate how uniaxial tensile strain can be utilized to optimize the electronic and optical properties of transition metal dichalcogenide lateral (in-plane) heterostructures such as MoX2/WX2 (X = S, Se, Te). We find that these lateral-type heterostructures may facilitate efficient electron–hole separation for light detection/harvesting and preserve their type II characteristic up to 12% of uniaxial strain. Basedmore » on the strain-dependent bandgap and band offset, we show that uniaxial tensile strain can significantly increase the power conversion efficiency of these lateral heterostructures. Our results suggest that these strain-engineered lateral heterostructures are promising for optimizing optoelectronic device performance by selectively tuning the energetics of the bandgap.« less

  17. Strain-engineered optoelectronic properties of 2D transition metal dichalcogenide lateral heterostructures

    NASA Astrophysics Data System (ADS)

    Lee, Jaekwang; Huang, Jingsong; Sumpter, Bobby G.; Yoon, Mina

    2017-06-01

    Compared with their bulk counterparts, 2D materials can sustain much higher elastic strain at which optical quantities such as bandgaps and absorption spectra governing optoelectronic device performance can be modified with relative ease. Using first-principles density functional theory and quasiparticle GW calculations, we demonstrate how uniaxial tensile strain can be utilized to optimize the electronic and optical properties of transition metal dichalcogenide lateral (in-plane) heterostructures such as MoX2/WX2 (X  =  S, Se, Te). We find that these lateral-type heterostructures may facilitate efficient electron-hole separation for light detection/harvesting and preserve their type II characteristic up to 12% of uniaxial strain. Based on the strain-dependent bandgap and band offset, we show that uniaxial tensile strain can significantly increase the power conversion efficiency of these lateral heterostructures. Our results suggest that these strain-engineered lateral heterostructures are promising for optimizing optoelectronic device performance by selectively tuning the energetics of the bandgap.

  18. Modular synthesis of a dual metal-dual semiconductor nano-heterostructure

    SciTech Connect

    Amirav, Lilac; Oba, Fadekemi; Aloni, Shaul; Alivisatos, A. Paul

    2015-04-29

    Reported is the design and modular synthesis of a dual metal-dual semiconductor heterostructure with control over the dimensions and placement of its individual components. Analogous to molecular synthesis, colloidal synthesis is now evolving into a series of sequential synthetic procedures with separately optimized steps. Here we detail the challenges and parameters that must be considered when assembling such a multicomponent nanoparticle, and their solutions.

  19. In-plane graphene/boron-nitride heterostructures as an efficient metal-free electrocatalyst for the oxygen reduction reaction

    NASA Astrophysics Data System (ADS)

    Sun, Qiao; Sun, Caixia; Du, Aijun; Dou, Shixue; Li, Zhen

    2016-07-01

    Exploiting metal-free catalysts for the oxygen reduction reaction (ORR) and understanding their catalytic mechanisms are vital for the development of fuel cells (FCs). Our study has demonstrated that in-plane heterostructures of graphene and boron nitride (G/BN) can serve as an efficient metal-free catalyst for the ORR, in which the C-N interfaces of G/BN heterostructures act as reactive sites. The formation of water at the heterointerface is both energetically and kinetically favorable via a four-electron pathway. Moreover, the water formed can be easily released from the heterointerface, and the catalytically active sites can be regenerated for the next cycle. Since G/BN heterostructures with controlled domain sizes have been successfully synthesized in recent reports (e.g. Nat. Nanotechnol., 2013, 8, 119), our results highlight the great potential of such heterostructures as a promising metal-free catalyst for the ORR in FCs.Exploiting metal-free catalysts for the oxygen reduction reaction (ORR) and understanding their catalytic mechanisms are vital for the development of fuel cells (FCs). Our study has demonstrated that in-plane heterostructures of graphene and boron nitride (G/BN) can serve as an efficient metal-free catalyst for the ORR, in which the C-N interfaces of G/BN heterostructures act as reactive sites. The formation of water at the heterointerface is both energetically and kinetically favorable via a four-electron pathway. Moreover, the water formed can be easily released from the heterointerface, and the catalytically active sites can be regenerated for the next cycle. Since G/BN heterostructures with controlled domain sizes have been successfully synthesized in recent reports (e.g. Nat. Nanotechnol., 2013, 8, 119), our results highlight the great potential of such heterostructures as a promising metal-free catalyst for the ORR in FCs. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr03288e

  20. Graphene oxide/graphene vertical heterostructure electrodes for highly efficient and flexible organic light emitting diodes

    NASA Astrophysics Data System (ADS)

    Jia, S.; Sun, H. D.; Du, J. H.; Zhang, Z. K.; Zhang, D. D.; Ma, L. P.; Chen, J. S.; Ma, D. G.; Cheng, H. M.; Ren, W. C.

    2016-05-01

    The relatively high sheet resistance, low work function and poor compatibility with hole injection layers (HILs) seriously limit the applications of graphene as transparent conductive electrodes (TCEs) for organic light emitting diodes (OLEDs). Here, a graphene oxide/graphene (GO/G) vertical heterostructure is developed as TCEs for high-performance OLEDs, by directly oxidizing the top layer of three-layer graphene films with ozone treatment. Such GO/G heterostructure electrodes show greatly improved optical transmittance, a large work function, high stability, and good compatibility with HIL materials (MoO3 in this work). Moreover, the conductivity of the heterostructure is not sacrificed compared to the pristine three-layer graphene electrodes, but is significantly higher than that of pristine two-layer graphene films. In addition to high flexibility, OLEDs with different emission colors based on the GO/G heterostructure TCEs show much better performance than those based on indium tin oxide (ITO) anodes. Green OLEDs with GO/G heterostructure electrodes have the maximum current efficiency and power efficiency, as high as 82.0 cd A-1 and 98.2 lm W-1, respectively, which are 36.7% (14.8%) and 59.2% (15.0%) higher than those with pristine graphene (ITO) anodes. These findings open up the possibility of using graphene for next generation high-performance flexible and wearable optoelectronics with high stability.The relatively high sheet resistance, low work function and poor compatibility with hole injection layers (HILs) seriously limit the applications of graphene as transparent conductive electrodes (TCEs) for organic light emitting diodes (OLEDs). Here, a graphene oxide/graphene (GO/G) vertical heterostructure is developed as TCEs for high-performance OLEDs, by directly oxidizing the top layer of three-layer graphene films with ozone treatment. Such GO/G heterostructure electrodes show greatly improved optical transmittance, a large work function, high stability

  1. Control of Interfacial Phenomena in Artificial Oxide Heterostructures

    DTIC Science & Technology

    2015-09-01

    heterostructures using the field effect to control superconductivity, magnetism, and metal‐insulator transitions. We also identify the existence of double TiO2 ...double TiO2 layers play a crucial role in determining the superconducting states of monolayer FeSe/SrTiO3. 15. SUBJECT TERMS Thin films, conductor...development of oxide‐based electronic devices.  We also identify the existence of double  TiO2   layers at the surface of SrTiO3 in the recently

  2. Self-Assembled Heterostructures: Selective Growth of Metallic Nanoparticles on V2 -VI3 Nanoplates.

    PubMed

    Dun, Chaochao; Hewitt, Corey A; Li, Qi; Guo, Yang; Jiang, Qike; Xu, Junwei; Marcus, Gabriel; Schall, Drew C; Carroll, David L

    2017-08-11

    Precise control of the selective growth of heterostructures with specific composition and functionalities is an emerging and extremely challenging topic. Here, the first investigation of the difference in binding energy between a series of metal-semiconductor heterostructures based on layered V2 -VI3 nanostructures is investigated by means of density functional theory. All lateral configurations show lower formation energy compared with that of the vertical ones, implying the selective growth of metal nanoparticles. The simulation results are supported by the successful fabrication of self-assembled Ag/Cu-nanoparticle-decorated p-type Sb2 Te3 and n-type Bi2 Te3 nanoplates at their lateral sites through a solution reaction. The detailed nucleation-growth kinetics are well studied with controllable reaction times and precursor concentrations. Accompanied by the preserved topological structure integrity and electron transfer on the semiconductor host, exceptional properties such as dramatically increased electrical conductivity are observed thanks to the pre-energy-filtering effect before carrier injection. A zigzag thermoelectric generator is built using Cu/Ag-decorated Sb2 Te3 and Bi2 Te3 as p-n legs to utilize the temperature gradient in the vertical direction. Synthetic approaches using similar chalcogenide nanoplates as building blocks, as well as careful control of the dopant metallic nanoparticles or semiconductors, are believed to be broadly applicable to other heterostructures with novel applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Approach to multifunctional device platform with epitaxial graphene on transition metal oxide

    PubMed Central

    Park, Jeongho; Back, Tyson; Mitchel, William C.; Kim, Steve S.; Elhamri, Said; Boeckl, John; Fairchild, Steven B.; Naik, Rajesh; Voevodin, Andrey A.

    2015-01-01

    Heterostructures consisting of two-dimensional materials have shown new physical phenomena, novel electronic and optical properties, and new device concepts not observed in bulk material systems or purely three dimensional heterostructures. These new effects originated mostly from the van der Waals interaction between the different layers. Here we report that a new optical and electronic device platform can be provided by heterostructures of 2D graphene with a metal oxide (TiO2). Our novel direct synthesis of graphene/TiO2 heterostructure is achieved by C60 deposition on transition Ti metal surface using a molecular beam epitaxy approach and O2 intercalation method, which is compatible with wafer scale growth of heterostructures. As-grown heterostructures exhibit inherent photosensitivity in the visible light spectrum with high photo responsivity. The photo sensitivity is 25 times higher than that of reported graphene photo detectors. The improved responsivity is attributed to optical transitions between O 2p orbitals in the valence band of TiO2 and C 2p orbitals in the conduction band of graphene enabled by Coulomb interactions at the interface. In addition, this heterostructure provides a platform for realization of bottom gated graphene field effect devices with graphene and TiO2 playing the roles of channel and gate dielectric layers, respectively. PMID:26395160

  4. Approach to multifunctional device platform with epitaxial graphene on transition metal oxide.

    PubMed

    Park, Jeongho; Back, Tyson; Mitchel, William C; Kim, Steve S; Elhamri, Said; Boeckl, John; Fairchild, Steven B; Naik, Rajesh; Voevodin, Andrey A

    2015-09-23

    Heterostructures consisting of two-dimensional materials have shown new physical phenomena, novel electronic and optical properties, and new device concepts not observed in bulk material systems or purely three dimensional heterostructures. These new effects originated mostly from the van der Waals interaction between the different layers. Here we report that a new optical and electronic device platform can be provided by heterostructures of 2D graphene with a metal oxide (TiO2). Our novel direct synthesis of graphene/TiO2 heterostructure is achieved by C60 deposition on transition Ti metal surface using a molecular beam epitaxy approach and O2 intercalation method, which is compatible with wafer scale growth of heterostructures. As-grown heterostructures exhibit inherent photosensitivity in the visible light spectrum with high photo responsivity. The photo sensitivity is 25 times higher than that of reported graphene photo detectors. The improved responsivity is attributed to optical transitions between O 2p orbitals in the valence band of TiO2 and C 2p orbitals in the conduction band of graphene enabled by Coulomb interactions at the interface. In addition, this heterostructure provides a platform for realization of bottom gated graphene field effect devices with graphene and TiO2 playing the roles of channel and gate dielectric layers, respectively.

  5. Theoretical Study of the Effect of an AlGaAs Double Heterostructure on Metal-Semiconductor-Metal Photodetector Performance

    NASA Technical Reports Server (NTRS)

    Salem, Ali F.; Smith, Arlynn W.; Brennan, Kevin F.

    1994-01-01

    The impulse and square-wave input response of different GaAs metal-semiconductor-metal photodetector (MSM) designs are theoretically examined using a two dimensional drift- diffusion numerical calculation with a thermionic-field emission boundary condition model for the heterojunctions. The rise time and the fall time of the output signal current are calculated for a simple GaAs, epitaxially grown, MSM device as well as for various double-heterostructure barrier devices. The double heterostructure devices consist of an AlGaAs layer sandwiched between the top GaAs active, absorption layer and the bottom GaAs substrate. The effect of the depth of the AlGaAs layer on the speed and responsivity of the MSM devices is examined. It is found that there is an optimal depth, at fixed applied bias, of the AlGaAs layer within the structure that provides maximum responsivity at minimal compromise in speed.

  6. Controllable synthesis of metal selenide heterostructures mediated by Ag2Se nanocrystals acting as catalysts.

    PubMed

    Zhou, Jiangcong; Huang, Feng; Xu, Ju; Wang, Yuansheng

    2013-10-21

    Ag2Se nanocrystals were demonstrated to be novel semiconductor mediators, or in other word catalysts, for the growth of semiconductor heterostructures in solution. This is a result of the unique feature of Ag2Se as a fast ion conductor, allowing foreign cations to dissolve and then to heterogrow the second phase. Using Ag2Se nanocrystals as catalysts, dimeric metal selenide heterostructures such as Ag2Se-CdSe and Ag2Se-ZnSe, and even multi-segment heterostructures such as Ag2Se-CdSe-ZnSe and Ag2Se-ZnSe-CdSe, were successfully synthesized. Several interesting features were found in the Ag2Se based heterogrowth. At the initial stage of heterogrowth, a layer of the second phase forms on the surface of an Ag2Se nanosphere, with a curved junction interface between the two phases. With further growth of the second phase, the Ag2Se nanosphere tends to flatten the junction surface by modifying its shape from sphere to hemisphere in order to minimize the conjunct area and thus the interfacial energy. Notably, the crystallographic relationship of the two phases in the heterostructure varies with the lattice parameters of the second phase, in order to reduce the lattice mismatch at the interface. Furthermore, a small lattice mismatch at the interface results in a straight rod-like second phase, while a large lattice mismatch would induce a tortuous product. The reported results may provide a new route for developing novel selenide semiconductor heterostructures which are potentially applicable in optoelectronic, biomedical, photovoltaic and catalytic fields.

  7. Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness

    SciTech Connect

    Wang Cong; Jin Kuijuan; Zhao Ruiqiang; Lu Huibin; Guo Haizhong; Ge Chen; He Meng; Wang Can; Yang Guozhen

    2011-05-02

    One order larger photovoltage is obtained with critical thicknesses of La{sub 0.9}Sr{sub 0.1}MnO{sub 3} films in both kinds of heterostructures of La{sub 0.9}Sr{sub 0.1}MnO{sub 3}/SrTiO{sub 3} (0.8 wt % Nb-doped) and La{sub 0.9}Sr{sub 0.1}MnO{sub 3}/Si fabricated at various oxygen pressures. Our self-consistent calculation reveals that the critical thickness of the La{sub 0.9}Sr{sub 0.1}MnO{sub 3} film with the ultimate value of photovoltage is just the thickness of the depletion layer of La{sub 0.9}Sr{sub 0.1}MnO{sub 3} in both heterojunctions, respectively.

  8. Orientation-Dependent Exciton-Plasmon Coupling in Embedded Organic/Metal Nanowire Heterostructures.

    PubMed

    Li, Yong Jun; Hong, Yan; Peng, Qian; Yao, Jiannian; Zhao, Yong Sheng

    2017-09-22

    The excitation of surface plasmons by optical emitters based on exciton-plasmon coupling is important for plasmonic devices with active optical properties. It has been theoretically demonstrated that the orientation of exciton dipole can significantly influence the coupling strength, yet systematic study of the coupling process in nanostructures is still hindered by the lack of proper material systems. In this work, we have experimentally investigated the orientation-dependent exciton-plasmon coupling in a rationally designed organic/metal nanowire heterostructure system. The heterostructures were prepared by inserting silver nanowires into crystalline organic waveguides during the self-assembly of dye molecules. Structures with different exciton orientations exhibited varying coupling efficiencies. The near-field exciton-plasmon coupling facilitates the design of nanophotonic devices based on the directional surface plasmon polariton propagations.

  9. Magnetotransport in metal/insulating-ferromagnet heterostructures: Spin Hall magnetoresistance or magnetic proximity effect

    NASA Astrophysics Data System (ADS)

    Zhou, X.; Ma, L.; Shi, Z.; Fan, W. J.; Zheng, Jian-Guo; Evans, R. F. L.; Zhou, S. M.

    2015-08-01

    We study the anomalous Hall-like effect (AHLE) and the effective anisotropic magnetoresistance (EAMR) in antiferromagnetic γ -IrMn3/Y3Fe5O12(YIG ) and Pt/YIG heterostructures. For γ -IrMn3/YIG , the EAMR and the AHLE resistivity change sign with temperature due to the competition between the spin Hall magnetoresistance (SMR) and the magnetic proximity effect (MPE) induced by the interfacial antiferromagnetic uncompensated magnetic moment. In contrast, for Pt/YIG, the AHLE resistivity changes sign with temperature whereas no sign change is observed in the EAMR. This is because the MPE and the SMR play a dominant role in the AHLE and the EAMR, respectively. As different types of galvanomagnetic properties, the AHLE and the EAMR have proved vital in disentangling the MPE and the SMR in metal/insulating-ferromagnet heterostructures.

  10. A high density two-dimensional electron gas in an oxide heterostructure on Si (001)

    SciTech Connect

    Jin, E. N.; Kornblum, L.; Kumah, D. P.; Zou, K.; Walker, F. J.; Broadbridge, C. C.; Ngai, J. H.; Ahn, C. H.

    2014-11-01

    We present the growth and characterization of layered heterostructures comprised of LaTiO{sub 3} and SrTiO{sub 3} epitaxially grown on Si (001). Magnetotransport measurements show that the sheet carrier densities of the heterostructures scale with the number of LaTiO{sub 3}/SrTiO{sub 3} interfaces, consistent with the presence of an interfacial 2-dimensional electron gas (2DEG) at each interface. Sheet carrier densities of 8.9 × 10{sup 14} cm{sup −2} per interface are observed. Integration of such high density oxide 2DEGs on silicon provides a bridge between the exceptional properties and functionalities of oxide 2DEGs and microelectronic technologies.

  11. Reversible tuning of two-dimensional electron gases in oxide heterostructures by chemical surface modification

    NASA Astrophysics Data System (ADS)

    Lee, H.; Campbell, N.; Ryu, S.; Chang, W.; Irwin, J.; Lindemann, S.; Mahanthappa, M. K.; Rzchowski, M. S.; Eom, C. B.

    2016-11-01

    Reversible control over the electrical properties of the two-dimensional electron gas (2DEG) in oxide heterostructures is a key capability enabling practical applications. Herein, we report an efficient method to reversibly tune the charge carrier density of the 2DEG by surface modification. We demonstrate both increasing and decreasing the carrier density of the LaAlO3/SrTiO3 2DEG interface via application of functional phosphonic acids with molecular dipoles pointing either toward or away from the interface, respectively. In addition, in the case of the enhanced 2DEG, we recovered the initial conduction properties by exposing the samples to a basic solution. The tuning processes were highly reversible over repetitive cycles. These results reveal that the surface modification is an efficient way to tune the carrier density of 2DEG in oxide heterostructures. This simple chemical approach offers a vast range of fabrication possibilities in versatile electronic device applications.

  12. Novel Photocatalytic Metal Oxides

    SciTech Connect

    Smith, Robert W.; Mei, Wai-Ning; Sabirianov, Renat; Wang, Lu

    2012-08-31

    The principal short-term objective is to develop improved solid-state photocatalysts for the decomposition of water into hydrogen gas using ultraviolet and visible solar radiation. We will pursue our objective by modeling candidate metal oxides through computer simulations followed by synthesis of promising candidates. We will characterize samples through standard experimental techniques. The long-term objective is to provide a more efficient source of hydrogen gas for fixed-site hydrogen fuel cells, particularly for energy users in remote locations.

  13. Enhancing triplet superconductivity by the proximity to a singlet superconductor in oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Horsdal, Mats; Khaliullin, Giniyat; Hyart, Timo; Rosenow, Bernd

    2016-06-01

    We show how in principle a coherent coupling between two superconductors of opposite parity can be realized in a three-layer oxide heterostructure. Due to strong intraionic spin-orbit coupling in the middle layer, singlet Cooper pairs are converted into triplet ones and vice versa. This results in a large enhancement of the triplet superconductivity, persisting well above the native triplet critical temperature.

  14. Research Update: Strategies for efficient photoelectrochemical water splitting using metal oxide photoanodes

    SciTech Connect

    Cho, Seungho; Jang, Ji-Wook; Lee, Kun-Hong E-mail: ce20047@postech.ac.kr; Lee, Jae Sung E-mail: ce20047@postech.ac.kr

    2014-01-01

    Photoelectrochemical (PEC) water splitting to hydrogen is an attractive method for capturing and storing the solar energy in the form of chemical energy. Metal oxides are promising photoanode materials due to their low-cost synthetic routes and higher stability than other semiconductors. In this paper, we provide an overview of recent efforts to improve PEC efficiencies via applying a variety of fabrication strategies to metal oxide photoanodes including (i) size and morphology-control, (ii) metal oxide heterostructuring, (iii) dopant incorporation, (iv) attachments of quantum dots as sensitizer, (v) attachments of plasmonic metal nanoparticles, and (vi) co-catalyst coupling. Each strategy highlights the underlying principles and mechanisms for the performance enhancements.

  15. Approach to Multifunctional Device Platform with Epitaxial Graphene on Transition Metal Oxide (Postprint)

    DTIC Science & Technology

    2015-09-23

    with a metal oxide ( TiO2 ). Our novel direct synthesis of graphene/ TiO2 heterostructure is achieved by C60 deposition on transition Ti metal surface...of TiO2 and C 2p orbitals in the conduction band of graphene enabled by Coulomb interactions at the interface. In addition, this heterostructure...provides a platform for realization of bottom gated graphene field effect devices with graphene and TiO2 playing the roles of channel and gate dielectric

  16. Band Alignment in MoS2/WS2 Transition Metal Dichalcogenide Heterostructures Probed by Scanning Tunneling Microscopy and Spectroscopy.

    PubMed

    Hill, Heather M; Rigosi, Albert F; Rim, Kwang Taeg; Flynn, George W; Heinz, Tony F

    2016-08-10

    Using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS), we examine the electronic structure of transition metal dichalcogenide heterostructures (TMDCHs) composed of monolayers of MoS2 and WS2. STS data are obtained for heterostructures of varying stacking configuration as well as the individual monolayers. Analysis of the tunneling spectra includes the influence of finite sample temperature, yield information about the quasi-particle bandgaps, and the band alignment of MoS2 and WS2. We report the band gaps of MoS2 (2.16 ± 0.04 eV) and WS2 (2.38 ± 0.06 eV) in the materials as measured on the heterostructure regions and the general type II band alignment for the heterostructure, which shows an interfacial band gap of 1.45 ± 0.06 eV.

  17. Semiconductor@metal-organic framework core-shell heterostructures: a case of ZnO@ZIF-8 nanorods with selective photoelectrochemical response.

    PubMed

    Zhan, Wen-wen; Kuang, Qin; Zhou, Jian-zhang; Kong, Xiang-jian; Xie, Zhao-xiong; Zheng, Lan-sun

    2013-02-06

    Metal-organic frameworks (MOFs) and related material classes are attracting considerable attention for their applications in gas storage/separation as well as catalysis. In contrast, research concerning potential uses in electronic devices (such as sensors) is in its infancy, which might be due to a great challenge in the fabrication of MOFs and semiconductor composites with well-designed structures. In this paper, we proposed a simple self-template strategy to fabricate metal oxide semiconductor@MOF core-shell heterostructures, and successfully obtained freestanding ZnO@ZIF-8 nanorods as well as vertically standing arrays (including nanorod arrays and nanotube arrays). In this synthetic process, ZnO nanorods not only act as the template but also provide Zn(2+) ions for the formation of ZIF-8. In addition, we have demonstrated that solvent composition and reaction temperature are two crucial factors for successfully fabricating well-defined ZnO@ZIF-8 heterostructures. As we expect, the as-prepared ZnO@ZIF-8 nanorod arrays display distinct photoelectrochemical response to hole scavengers with different molecule sizes (e.g., H(2)O(2) and ascorbic acid) owing to the limitation of the aperture of the ZIF-8 shell. Excitingly, such ZnO@ZIF-8 nanorod arrays were successfully applied to the detection of H(2)O(2) in the presence of serous buffer solution. Therefore, it is reasonable to believe that the semiconductor@MOFs heterostructure potentially has promising applications in many electronic devices including sensors.

  18. Strongly enhanced Rashba splittings in an oxide heterostructure: A tantalate monolayer on BaHfO3

    DOE PAGES

    Kim, Minsung; Ihm, Jisoon; Chung, Suk Bum

    2016-09-22

    In the two-dimensional electron gas emerging at the transition metal oxide surface and interface, various exotic electronic ordering and topological phases can become experimentally more accessible with the stronger Rashba spin-orbit interaction. Here, we present a promising route to realize significant Rashba-type band splitting using a thin film heterostructure. Based on first-principles methods and analytic model analyses, a tantalate monolayer on BaHfO3 is shown to host two-dimensional bands originating from Ta t2g states with strong Rashba spin splittings, nearly 10% of the bandwidth, at both the band minima and saddle points. An important factor in this enhanced splitting is themore » significant t2g–eg interband coupling, which can generically arise when the inversion symmetry is maximally broken due to the strong confinement of the 2DEG on a transition metal oxide surface. Here, our results could be useful in realizing topological superconductivity at oxide surfaces.« less

  19. Tunable absorption in heterostructures composed of a highly absorptive metallic film and Fibonacci fractal photonic crystals

    NASA Astrophysics Data System (ADS)

    Qiao, Wei; Sun, Jie; Du, Gui-Qiang

    2016-03-01

    We have theoretically investigated the anomalous optical properties of heterostructures composed of a highly absorptive metal film and a truncated Fibonacci fractal photonic crystal. It is found that one or multiple highly reflected peaks, even enhanced transmission narrowband, can be realized in the near-complete absorption broadband, where the photonic crystals are selected with various Fibonacci sequences or a given sequence as the basic unit. These properties are significant to design important reflection or transmission optical devices in the visible and near-infrared ranges.

  20. Heterostructures of phosphorene and transition metal dichalcogenides for excitonic solar cells: A first-principles study

    SciTech Connect

    Ganesan, Vellayappan Dheivanayagam; Shen, Lei; Linghu, Jiajun; Zhang, Chun; Feng, Yuan Ping

    2016-03-21

    Using the many-body perturbation GW theory, we study the quasiparticle conduction-band offsets of phosphorene, a two-dimensional atomic layer of black phosphorus, and transition-metal dichalcogenides (TMDs). The calculated large exciton binding energies of phosphorene and TMDs indicate that their type-II heterostructures are suitable for excitonic thin-film solar cell applications. Our results show that these heterojunctions have a potential maximum power conversion efficiency of up to 12%, which can be further enhanced up to 20% by strain engineering.

  1. MBE Growth of Ferromagnetic Metal/Compound Semiconductor Heterostructures for Spintronics

    ScienceCinema

    Palmstrom, Chris [University of California, Santa Barbara, California, United States

    2016-07-12

    Electrical transport and spin-dependent transport across ferromagnet/semiconductor contacts is crucial in the realization of spintronic devices. Interfacial reactions, the formation of non-magnetic interlayers, and conductivity mismatch have been attributed to low spin injection efficiency. MBE has been used to grow epitaxial ferromagnetic metal/GA(1-x)AL(x)As heterostructures with the aim of controlling the interfacial structural, electronic, and magnetic properties. In situ, STM, XPS, RHEED and LEED, and ex situ XRD, RBS, TEM, magnetotransport, and magnetic characterization have been used to develop ferromagnetic elemental and metallic compound/compound semiconductor tunneling contacts for spin injection. The efficiency of the spin polarized current injected from the ferromagnetic contact has been determined by measuring the electroluminescence polarization of the light emitted from/GA(1-x)AL(x)As light-emitting diodes as a function of applied magnetic field and temperature. Interfacial reactions during MBE growth and post-growth anneal, as well as the semiconductor device band structure, were found to have a dramatic influence on the measured spin injection, including sign reversal. Lateral spin-transport devices with epitaxial ferromagnetic metal source and drain tunnel barrier contacts have been fabricated with the demonstration of electrical detection and the bias dependence of spin-polarized electron injection and accumulation at the contacts. This talk emphasizes the progress and achievements in the epitaxial growth of a number of ferromagnetic compounds/III-V semiconductor heterostructures and the progress towards spintronic devices.

  2. Method of producing homogeneous mixed metal oxides and metal-metal oxide mixtures

    DOEpatents

    Quinby, Thomas C.

    1978-01-01

    Metal powders, metal oxide powders, and mixtures thereof of controlled particle size are provided by reacting an aqueous solution containing dissolved metal values with excess urea. Upon heating, urea reacts with water from the solution leaving a molten urea solution containing the metal values. The molten urea solution is heated to above about 180.degree. C. whereupon metal values precipitate homogeneously as a powder. The powder is reduced to metal or calcined to form oxide particles. One or more metal oxides in a mixture can be selectively reduced to produce metal particles or a mixture of metal and metal oxide particles.

  3. Transparent metal oxide nanowire transistors

    NASA Astrophysics Data System (ADS)

    Chen, Di; Liu, Zhe; Liang, Bo; Wang, Xianfu; Shen, Guozhen

    2012-05-01

    With the features of high mobility, a high electric on/off ratio and excellent transparency, metal oxide nanowires are excellent candidates for transparent thin-film transistors, which is one of the key technologies to realize transparent electronics. This article provides a comprehensive review of the state-of-the-art research activities that focus on transparent metal oxide nanowire transistors. It begins with the brief introduction to the synthetic methods for high quality metal oxide nanowires, and the typical nanowire transfer and printing techniques with emphasis on the simple contact printing methodology. High performance transparent transistors built on both single nanowires and nanowire thin films are then highlighted. The final section deals with the applications of transparent metal oxide nanowire transistors in the field of transparent displays and concludes with an outlook on the current perspectives and future directions of transparent metal oxide nanowire transistors.

  4. Transparent metal oxide nanowire transistors.

    PubMed

    Chen, Di; Liu, Zhe; Liang, Bo; Wang, Xianfu; Shen, Guozhen

    2012-05-21

    With the features of high mobility, a high electric on/off ratio and excellent transparency, metal oxide nanowires are excellent candidates for transparent thin-film transistors, which is one of the key technologies to realize transparent electronics. This article provides a comprehensive review of the state-of-the-art research activities that focus on transparent metal oxide nanowire transistors. It begins with the brief introduction to the synthetic methods for high quality metal oxide nanowires, and the typical nanowire transfer and printing techniques with emphasis on the simple contact printing methodology. High performance transparent transistors built on both single nanowires and nanowire thin films are then highlighted. The final section deals with the applications of transparent metal oxide nanowire transistors in the field of transparent displays and concludes with an outlook on the current perspectives and future directions of transparent metal oxide nanowire transistors.

  5. Band engineering in transition metal dichalcogenides: Stacked versus lateral heterostructures

    SciTech Connect

    Guo, Yuzheng; Robertson, John

    2016-06-06

    We calculate a large difference in the band alignments for transition metal dichalcogenide (TMD) heterojunctions when arranged in the stacked layer or lateral (in-plane) geometries, using direct supercell calculations. The stacked case follows the unpinned limit of the electron affinity rule, whereas the lateral geometry follows the strongly pinned limit of alignment of charge neutrality levels. TMDs therefore provide one of the few clear tests of band alignment models, whereas three-dimensional semiconductors give less stringent tests because of accidental chemical trends in their properties.

  6. Fabrication and characterization of copper oxide (CuO)–gold (Au)–titania (TiO{sub 2}) and copper oxide (CuO)–gold (Au)–indium tin oxide (ITO) nanowire heterostructures

    SciTech Connect

    Chopra, Nitin; Shi, Wenwu; Lattner, Andrew

    2014-10-15

    Nanoscale heterostructures composed of standing copper oxide nanowires decorated with Au nanoparticles and shells of titania and indium tin oxide were fabricated. The fabrication process involved surfactant-free and wet-chemical nucleation of gold nanoparticles on copper oxide nanowires followed by a line-of-sight sputtering of titania or indium tin oxide. The heterostructures were characterized using high resolution electron microscopy, diffraction, and energy dispersive spectroscopy. The interfaces, morphologies, crystallinity, phases, and chemical compositions were analyzed. The process of direct nucleation of gold nanoparticles on copper oxide nanoparticles resulted in low energy interface with aligned lattice for both the components. Coatings of polycrystalline titania or amorphous indium tin oxide were deposited on standing copper oxide nanowire–gold nanoparticle heterostructures. Self-shadowing effect due to standing nanowire heterostructures was observed for line-of-sight sputter deposition of titania or indium tin oxide coatings. Finally, the heterostructures were studied using Raman spectroscopy and ultraviolet–visible spectroscopy, including band gap energy analysis. Tailing in the band gap energy at longer wavelengths (or lower energies) was observed for the nanowire heterostructures. - Highlights: • Heterostructures comprised of CuO nanowires coated with Au nanoparticles. • Au nanoparticles exhibited nearly flat and low energy interface with nanowire. • Heterostructures were further sputter-coated with oxide shell of TiO{sub 2} or ITO. • The process resulted in coating of polycrystalline TiO{sub 2} and amorphous ITO shell.

  7. Thermal oxidation of Si/SiGe heterostructures for use in quantum dot qubits

    NASA Astrophysics Data System (ADS)

    Neyens, Samuel F.; Foote, Ryan H.; Knapp, T. J.; McJunkin, Thomas; Savage, D. E.; Lagally, M. G.; Coppersmith, S. N.; Eriksson, M. A.

    Here we demonstrate dry thermal oxidation of a Si/SiGe heterostructure at 700°C and use a Hall bar device to measure the mobility after oxidation to be 43,000 cm2V-1s-1 at a carrier density of 4.1 ×1011 cm-2. Surprisingly, we find no significant reduction in mobility compared with an Al2O3 device made with atomic layer deposition on the same heterostructure, indicating thermal oxidation can be used to process Si/SiGe quantum dot devices. This result provides a path for investigating improvements to the gate oxide in Si/SiGe qubit devices, whose performance is believed to be limited by charge noise in the oxide layer. This work was supported in part by ARO (W911NF-12-0607) and NSF (DMR-1206915 and PHY-1104660). Development and maintenance of the growth facilities used for fabricating samples is supported by DOE (DE-FG02-03ER46028). This research utilized NSF-supported shared facilities at the University of Wisconsin-Madison.

  8. Optical harmonics generation in metal/dielectric heterostructures in the presence of Tamm plasmon-polaritons

    NASA Astrophysics Data System (ADS)

    Afinogenov, B. I.; Popkova, A. A.; Bessonov, V. O.; Fedyanin, A. A.

    2016-03-01

    We have studied an influence of Tamm plasmon-polaritons (TPPs) excitation on the nonlinear-optical response of one-dimensional photonic crystal/metal structures. It was shown that in case when the fundamental radiation is in resonance with the TPP, second-harmonic generation in the sample is enhanced over two times of magnitude in comparison with a bare metal film. Using methods of nonlinear transfer matrices it was demonstrated that the third-order nonlinear response of a metal/dielectric heterostructure, when both fundamental and third-harmonic radiation are in resonance with the first- and third-order TPPs respectively, can be enhanced via two mechanisms: fundamental field localization and optical harmonic resonant tunneling. The overall enhancement of the third harmonic generation in that case can exceed three orders of magnitude in comparison with the non-resonant case.

  9. The modulation of Schottky barriers of metal-MoS2 contacts via BN-MoS2 heterostructures.

    PubMed

    Su, Jie; Feng, Liping; Zhang, Yan; Liu, Zhengtang

    2016-06-22

    Using first-principles calculations within density functional theory, we systematically studied the effect of BN-MoS2 heterostructure on the Schottky barriers of metal-MoS2 contacts. Two types of FETs are designed according to the area of the BN-MoS2 heterostructure. Results show that the vertical and lateral Schottky barriers in all the studied contacts, irrespective of the work function of the metal, are significantly reduced or even vanish when the BN-MoS2 heterostructure substitutes the monolayer MoS2. Only the n-type lateral Schottky barrier of Au/BN-MoS2 contact relates to the area of the BN-MoS2 heterostructure. Notably, the Pt-MoS2 contact with n-type character is transformed into a p-type contact upon substituting the monolayer MoS2 by a BN-MoS2 heterostructure. These changes of the contact natures are ascribed to the variation of Fermi level pinning, work function and charge distribution. Analysis demonstrates that the Fermi level pinning effects are significantly weakened for metal/BN-MoS2 contacts because no gap states dominated by MoS2 are formed, in contrast to those of metal-MoS2 contacts. Although additional BN layers reduce the interlayer interaction and the work function of the metal, the Schottky barriers of metal/BN-MoS2 contacts still do not obey the Schottky-Mott rule. Moreover, different from metal-MoS2 contacts, the charges transfer from electrodes to the monolayer MoS2, resulting in an increment of the work function of these metals in metal/BN-MoS2 contacts. These findings may prove to be instrumental in the future design of new MoS2-based FETs with ohmic contact or p-type character.

  10. Interfacial control of Dzyaloshinskii-Moriya interaction in heavy metal/ferromagnetic metal thin film heterostructures

    NASA Astrophysics Data System (ADS)

    Ma, Xin; Yu, Guoqiang; Li, Xiang; Wang, Tao; Wu, Di; Olsson, Kevin S.; Chu, Zhaodong; An, Kyongmo; Xiao, John Q.; Wang, Kang L.; Li, Xiaoqin

    2016-11-01

    The interfacial Dzyaloshinskii-Moriya interaction (DMI) in ultrathin magnetic thin film heterostructures provides a new approach for controlling spin textures on mesoscopic length scales. Here we investigate the dependence of the interfacial DMI constant D on a Pt wedge insertion layer in Ta/CoFeB/Pt(wedge)/MgO thin films by observing the asymmetric spin-wave dispersion using Brillouin light scattering. Continuous tuning of D by more than a factor of 3 is realized by inserting less than one monolayer of Pt. The observations provide new insights for designing magnetic thin film heterostructures with tailored D for controlling skyrmions and magnetic domain-wall chirality and dynamics.

  11. Light-matter interaction in transition metal dichalcogenides and their heterostructures

    NASA Astrophysics Data System (ADS)

    Wurstbauer, Ursula; Miller, Bastian; Parzinger, Eric; Holleitner, Alexander W.

    2017-05-01

    The investigation of two-dimensional (2D) van der Waals materials is a vibrant, fast-moving and still growing interdisciplinary area of research. These materials are truly 2D crystals with strong covalent in-plane bonds and weak van der Waals interaction between the layers, and have a variety of different electronic, optical and mechanical properties. Transition metal dichalcogenides are a very prominent class of 2D materials, particularly the semiconducting subclass. Their properties include bandgaps in the near-infrared to the visible range, decent charge carrier mobility together with high (photo-) catalytic and mechanical stability, and exotic many-body phenomena. These characteristics make the materials highly attractive for both fundamental research as well as innovative device applications. Furthermore, the materials exhibit a strong light-matter interaction, providing a high sunlight absorbance of up to 15% in the monolayer limit, strong scattering cross section in Raman experiments, and access to excitonic phenomena in van der Waals heterostructures. This review focuses on the light-matter interaction in MoS2, WS2, MoSe2 and WSe2, which is dictated by the materials’ complex dielectric functions, and on the multiplicity of studying the first-order phonon modes by Raman spectroscopy to gain access to several material properties such as doping, strain, defects and temperature. 2D materials provide an interesting platform for stacking them into van der Waals heterostructures without the limitation of lattice mismatch, resulting in novel devices for applications but also to enable the study of exotic many-body interaction phenomena such as interlayer excitons. Future perspectives of semiconducting transition metal dichalcogenides and their heterostructures for applications in optoelectronic devices will be examined, and routes to study emergent fundamental problems and many-body quantum phenomena under excitations with photons will be discussed.

  12. Semiconductor to Metal Transition Characteristics of VO2/NiO Epitaxial Heterostructures Integrated with Si(100)

    NASA Astrophysics Data System (ADS)

    Molaei, Roya

    The novel functionalities of Vanadium dioxide (VO2), such as, several orders of magnitude transition in resistivity and IR transmittance, provide the exciting opportunity for the development of next generation memory, sensor, and field-effect based devices. A critical issue in the development of practical devices based on metal oxides is the integration of high quality epitaxial oxide thin films with the existing silicon technology which is based on silicon (100) substrates. However, silicon is not suitable for epitaxial growth of oxides owing to its tendency to readily form an amorphous oxide layer or silicide at the film-substrate interface. The oxide films deposited directly on silicon exhibit poor crystallinity and are not suitable for device applications. To overcome this challenge, appropriate substrate templates must be developed for the growth of oxide thin films on silicon substrates. The primary objective of this dissertation was to develop an integration methodology of VO2 with Si (100) substrates so they could be used in "smart" sensor type of devices along with other multifunctional devices on the same silicon chip. This was achieved by using a NiO/c- YSZ template layer deposited in situ. It will be shown that if the deposition conditions are controlled properly. This approach was used to integrate VO 2 thin films with Si (100) substrates using pulsed laser deposition (PLD) technique. The deposition methodology of integrating VO2 thin films on silicon using various other template layers will also be discussed. Detailed epitaxial relationship of NiO/c-YSZ/Si(100) heterostructures as a template to growth of VO2 as well as were studied. We also were able to create a p-n junction within a single NiO epilayer through subsequent nanosecond laser annealing, as well as established a structure-property correlation in NiO/c-YSZ/Si(100) thin film epitaxial heterostructures with especial emphasis on the stoichiometry and crystallographic characteristics. Ni

  13. Photo-Response of Functionalized Self-Assembled Graphene Oxide on Zinc Oxide Heterostructure to UV Illumination.

    PubMed

    Fouda, A N; El Basaty, A B; Eid, E A

    2016-12-01

    Convective assembly technique which is a simple and scalable method was used for coating uniform graphene oxide (GO) nanosheets on zinc oxide (ZnO) thin films. Upon UV irradiation, an enhancement in the on-off ratio was observed after functionalizing ZnO films by GO nanosheets. The calculations of on-off ratio, the device responsivity, and the external quantum efficiency were investigated and implied that the GO layer provides a stable pathway for electron transport. Structural investigations of the assembled GO and the heterostructure of GO on ZnO were performed using scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FTIR). The covered GO layer has a wide continuous area, with wrinkles and folds at the edges. In addition, the phonon lattice vibrations were investigated by Raman analysis. For GO and the heterostructure, a little change in the ratio between the D-band and G-band was found which means that no additional defects were formed within the heterostructure.

  14. Hidden Interface Driven Exchange Coupling in Oxide Heterostructures

    DOE PAGES

    Chen, Aiping; Wang, Qiang; Fitzsimmons, Michael R.; ...

    2017-05-02

    In a variety of emergent phenomena have been enabled by interface engineering in complex oxides. The existence of an intrinsic interfacial layer has often been found at oxide heterointerfaces. But, the role of such an interlayerin controlling functionalities is not fully explored. Here, we report the control of the exchange bias (EB) in single-phase manganite thin films with nominallyuniform chemical composition across the interfaces. The sign of EB depends on the magnitude of the cooling field. A pinned layer, confirmed by polarized neutron reflectometry, provides the source of unidirectional anisotropy. The origin of the exchange bias coupling is discussed inmore » terms of magnetic interactions between the interfacial ferromagnetically reduced layer and the bulk ferromagnetic region. The sign of EB is related to the frustration of antiferromagnetic coupling between the ferromagnetic region and the pinned layer. These results shed new light on using oxide interfaces to design functional spintronic devices.« less

  15. Interface control of the magnetic chirality in CoFeB/MgO heterostructures with heavy-metal underlayers.

    PubMed

    Torrejon, Jacob; Kim, Junyeon; Sinha, Jaivardhan; Mitani, Seiji; Hayashi, Masamitsu; Yamanouchi, Michihiko; Ohno, Hideo

    2014-08-18

    Recent advances in the understanding of spin orbital effects in ultrathin magnetic heterostructures have opened new paradigms to control magnetic moments electrically. The Dzyaloshinskii-Moriya interaction (DMI) is said to play a key role in forming a Néel-type domain wall that can be driven by the spin Hall torque. Here we show that the strength and sign of the DMI can be changed by modifying the adjacent heavy-metal underlayer (X) in perpendicularly magnetized X/CoFeB/MgO heterostructures. The sense of rotation of a domain wall spiral is reversed when the underlayer is changed from Hf, Ta to W and the strength of DMI varies as the filling of 5d orbitals, or the electronegativity, of the heavy-metal layer changes. The DMI can even be tuned by adding nitrogen to the underlayer, thus allowing interface engineering of the magnetic texture in ultrathin magnetic heterostructures.

  16. N 2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD

    NASA Astrophysics Data System (ADS)

    Tan, C. S.; Choi, W. K.; Bera, L. K.; Pey, K. L.; Antoniadis, D. A.; Fitzgerald, E. A.; Currie, M. T.; Maiti, C. K.

    2001-11-01

    Oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD method using a rapid thermal processing technique in N 2O ambient is investigated. The electrical properties of the grown oxide have been characterized using a MOS structure. Hole confinement in the SiGe layer at low field is observed from the capacitance-voltage curve and this suggests that the strain in the initially strained Si epilayer is retained after oxidation. The experimental results are compared with simulation results obtained from a 1D Poisson solver. Dit and Qf/ q values are estimated to be 3×10 11 cm -2 eV -1 and -1.2×10 11 cm -2, respectively. These high values of Dit and negative Qf/ q could possibly be due to Ge out diffusion and pile up at the SiO 2/strained-Si interface. The oxide exhibits an excellent breakdown field of 15 MV cm -1.

  17. Thin film hydrous metal oxide catalysts

    DOEpatents

    Dosch, Robert G.; Stephens, Howard P.

    1995-01-01

    Thin film (<100 nm) hydrous metal oxide catalysts are prepared by 1) synthesis of a hydrous metal oxide, 2) deposition of the hydrous metal oxide upon an inert support surface, 3) ion exchange with catalytically active metals, and 4) activating the hydrous metal oxide catalysts.

  18. A red metallic oxide photocatalyst

    NASA Astrophysics Data System (ADS)

    Xu, Xiaoxiang; Randorn, Chamnan; Efstathiou, Paraskevi; Irvine, John T. S.

    2012-07-01

    Light absorption across the bandgap in semiconductors is exploited in many important applications such as photovoltaics, light emitting diodes and photocatalytic conversion. Metals differ from semiconductors in that there is no energy gap separating occupied and unoccupied levels; however, it is still possible to excite electrons between bands. This is evidenced by materials with metallic properties that are also strongly coloured. An important question is whether such coloured metals could be used in light harvesting or similar applications. The high conductivity of a metal would preclude sufficient electric field being available to separate photocarriers; however, the high carrier mobility in a metal might also facilitate kinetic charge separation. Here we clearly demonstrate for the first time the use of a red metallic oxide, Sr1-xNbO3 as an effective photocatalyst. The material has been used under visible light to photocatalyse the oxidation of methylene blue and both the oxidation and reduction of water assisted by appropriate sacrificial elements.

  19. Metal Atom Oxidation Laser

    DTIC Science & Technology

    1976-09-01

    mixtures of dusts of rare earth fluorides and oxides administered intratracheally and by inhalation. Some of the test animals (guinea pigs) died of...neodymium and cerium oxides were also made. These dusts were administered intratracheally to white rats. The investigation showed that these oxides...but milder. Cerium oxide was the least damaging of the three. With regard to the" aerosols of the oxides of yttrium, neodymium and other rare earth

  20. Interface-induced magnetism and strong correlation in oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Stemmer, Susanne

    2015-03-01

    Two-dimensional electron gases (2DEGs) at interfaces between two insulating oxides have attracted significant attention because they can exhibit unique properties, such as strong electron correlations, superconductivity and magnetism. In this presentation, we will discuss the emergent properties of 2DEGs in SrTiO3 quantum wells that are interfaced with Mott insulating rare earth titanates (RTiO3) . We show that the magnetic properties of the 2DEG can be tuned to be either (incipient) ferromagnetic or (incipient) antiferromagnetic, depending on the specific RTiO3 that interfaces it. The thickness of the quantum well is a critical tuning parameter and determines the onset of magnetism, the proximity to a quantum critical point, and the onset of non-Fermi liquid behavior for those quantum wells that are in proximity to an antiferromagnetic transition. We will also discuss the role of symmetry-lowering structural transitions in the quantum well.

  1. Magneto-optical investigation of spin–orbit torques in metallic and insulating magnetic heterostructures

    PubMed Central

    Montazeri, Mohammad; Upadhyaya, Pramey; Onbasli, Mehmet C.; Yu, Guoqiang; Wong, Kin L.; Lang, Murong; Fan, Yabin; Li, Xiang; Khalili Amiri, Pedram; Schwartz, Robert N.; Ross, Caroline A.; Wang, Kang L.

    2015-01-01

    Manipulating magnetism by electric current is of great interest for both fundamental and technological reasons. Much effort has been dedicated to spin–orbit torques (SOTs) in metallic structures, while quantitative investigation of analogous phenomena in magnetic insulators remains challenging due to their low electrical conductivity. Here we address this challenge by exploiting the interaction of light with magnetic order, to directly measure SOTs in both metallic and insulating structures. The equivalency of optical and transport measurements is established by investigating a heavy-metal/ferromagnetic-metal device (Ta/CoFeB/MgO). Subsequently, SOTs are measured optically in the contrasting case of a magnetic-insulator/heavy-metal (YIG/Pt) heterostructure, where analogous transport measurements are not viable. We observe a large anti-damping torque in the YIG/Pt system, revealing its promise for spintronic device applications. Moreover, our results demonstrate that SOT physics is directly accessible by optical means in a range of materials, where transport measurements may not be possible. PMID:26643048

  2. Magneto-optical investigation of spin-orbit torques in metallic and insulating magnetic heterostructures.

    PubMed

    Montazeri, Mohammad; Upadhyaya, Pramey; Onbasli, Mehmet C; Yu, Guoqiang; Wong, Kin L; Lang, Murong; Fan, Yabin; Li, Xiang; Khalili Amiri, Pedram; Schwartz, Robert N; Ross, Caroline A; Wang, Kang L

    2015-12-08

    Manipulating magnetism by electric current is of great interest for both fundamental and technological reasons. Much effort has been dedicated to spin-orbit torques (SOTs) in metallic structures, while quantitative investigation of analogous phenomena in magnetic insulators remains challenging due to their low electrical conductivity. Here we address this challenge by exploiting the interaction of light with magnetic order, to directly measure SOTs in both metallic and insulating structures. The equivalency of optical and transport measurements is established by investigating a heavy-metal/ferromagnetic-metal device (Ta/CoFeB/MgO). Subsequently, SOTs are measured optically in the contrasting case of a magnetic-insulator/heavy-metal (YIG/Pt) heterostructure, where analogous transport measurements are not viable. We observe a large anti-damping torque in the YIG/Pt system, revealing its promise for spintronic device applications. Moreover, our results demonstrate that SOT physics is directly accessible by optical means in a range of materials, where transport measurements may not be possible.

  3. Atomic thin titania nanosheet-coupled reduced graphene oxide 2D heterostructures for enhanced photocatalytic activity and fast lithium storage

    NASA Astrophysics Data System (ADS)

    Li, Dong Jun; Huang, Zhegang; Hwang, Tae Hoon; Narayan, Rekha; Choi, Jang Wook; Kim, Sang Ouk

    2016-03-01

    Realizing practical high performance materials and devices using the properties of 2D materials is of key research interest in the materials science field. In particular, building well-defined heterostructures using more than two different 2D components in a rational way is highly desirable. In this paper, a 2D heterostructure consisting of atomic thin titania nanosheets densely grown on reduced graphene oxide surface is successfully prepared through incorporating polymer functionalized graphene oxide into the novel TiO2 nanosheets synthesis scheme. As a result of the synergistic combination of a highly accessible surface area and abundant interface, which can modulate the physicochemical properties, the resultant heterostructure can be used in high efficiency visible light photocatalysis as well as fast energy storage with a long lifecycle. [Figure not available: see fulltext.

  4. Metal oxide nanostructures with hierarchical morphology

    DOEpatents

    Ren, Zhifeng; Lao, Jing Yu; Banerjee, Debasish

    2007-11-13

    The present invention relates generally to metal oxide materials with varied symmetrical nanostructure morphologies. In particular, the present invention provides metal oxide materials comprising one or more metallic oxides with three-dimensionally ordered nanostructural morphologies, including hierarchical morphologies. The present invention also provides methods for producing such metal oxide materials.

  5. Electronic structures and enhanced optical properties of blue phosphorene/transition metal dichalcogenides van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Peng, Qiong; Wang, Zhenyu; Sa, Baisheng; Wu, Bo; Sun, Zhimei

    2016-08-01

    As a fast emerging topic, van der Waals (vdW) heterostructures have been proposed to modify two-dimensional layered materials with desired properties, thus greatly extending the applications of these materials. In this work, the stacking characteristics, electronic structures, band edge alignments, charge density distributions and optical properties of blue phosphorene/transition metal dichalcogenides (BlueP/TMDs) vdW heterostructures were systematically studied based on vdW corrected density functional theory. Interestingly, the valence band maximum and conduction band minimum are located in different parts of BlueP/MoSe2, BlueP/WS2 and BlueP/WSe2 heterostructures. The MoSe2, WS2 or WSe2 layer can be used as the electron donor and the BlueP layer can be used as the electron acceptor. We further found that the optical properties under visible-light irradiation of BlueP/TMDs vdW heterostructures are significantly improved. In particular, the predicted upper limit energy conversion efficiencies of BlueP/MoS2 and BlueP/MoSe2 heterostructures reach as large as 1.16% and 0.98%, respectively, suggesting their potential applications in efficient thin-film solar cells and optoelectronic devices.

  6. Electronic structures and enhanced optical properties of blue phosphorene/transition metal dichalcogenides van der Waals heterostructures.

    PubMed

    Peng, Qiong; Wang, Zhenyu; Sa, Baisheng; Wu, Bo; Sun, Zhimei

    2016-08-24

    As a fast emerging topic, van der Waals (vdW) heterostructures have been proposed to modify two-dimensional layered materials with desired properties, thus greatly extending the applications of these materials. In this work, the stacking characteristics, electronic structures, band edge alignments, charge density distributions and optical properties of blue phosphorene/transition metal dichalcogenides (BlueP/TMDs) vdW heterostructures were systematically studied based on vdW corrected density functional theory. Interestingly, the valence band maximum and conduction band minimum are located in different parts of BlueP/MoSe2, BlueP/WS2 and BlueP/WSe2 heterostructures. The MoSe2, WS2 or WSe2 layer can be used as the electron donor and the BlueP layer can be used as the electron acceptor. We further found that the optical properties under visible-light irradiation of BlueP/TMDs vdW heterostructures are significantly improved. In particular, the predicted upper limit energy conversion efficiencies of BlueP/MoS2 and BlueP/MoSe2 heterostructures reach as large as 1.16% and 0.98%, respectively, suggesting their potential applications in efficient thin-film solar cells and optoelectronic devices.

  7. Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures

    NASA Astrophysics Data System (ADS)

    Jianzhi, Zhao; Zhaojun, Lin; D, Corrigan T.; Yu, Zhang; Huijun, Li; Zhanguo, Wang

    2009-10-01

    The influence of annealed ohmic contact metals on the electron mobility of a two dimensional electron gas (2DEG) is investigated on ungated AlGaN/GaN heterostructures and AlGaN/GaN heterostructure field effect transistors (AlGaN/GaN HFETs). Current-voltage (I-V) characteristics for ungated AlGaN/GaN heterostructures and capacitance-voltage (C-V) characteristics for AlGaN/GaN HFETs are obtained, and the electron mobility for the ungated AlGaN/GaN heterostructure is calculated. It is found that the electron mobility of the 2DEG for the ungated AlGaN/GaN heterostructure is decreased by more than 50% compared with the electron mobility of Hall measurements. We propose that defects are introduced into the AlGaN barrier layer and the strain of the AlGaN barrier layer is changed during the annealing process of the source and drain, causing the decrease in the electron mobility.

  8. Electronic structures and enhanced optical properties of blue phosphorene/transition metal dichalcogenides van der Waals heterostructures

    PubMed Central

    Peng, Qiong; Wang, Zhenyu; Sa, Baisheng; Wu, Bo; Sun, Zhimei

    2016-01-01

    As a fast emerging topic, van der Waals (vdW) heterostructures have been proposed to modify two-dimensional layered materials with desired properties, thus greatly extending the applications of these materials. In this work, the stacking characteristics, electronic structures, band edge alignments, charge density distributions and optical properties of blue phosphorene/transition metal dichalcogenides (BlueP/TMDs) vdW heterostructures were systematically studied based on vdW corrected density functional theory. Interestingly, the valence band maximum and conduction band minimum are located in different parts of BlueP/MoSe2, BlueP/WS2 and BlueP/WSe2 heterostructures. The MoSe2, WS2 or WSe2 layer can be used as the electron donor and the BlueP layer can be used as the electron acceptor. We further found that the optical properties under visible-light irradiation of BlueP/TMDs vdW heterostructures are significantly improved. In particular, the predicted upper limit energy conversion efficiencies of BlueP/MoS2 and BlueP/MoSe2 heterostructures reach as large as 1.16% and 0.98%, respectively, suggesting their potential applications in efficient thin-film solar cells and optoelectronic devices. PMID:27553787

  9. Photoionization of oxidized metal clusters

    SciTech Connect

    Dao, P.D.; Peterson, K.I.; Castleman, A.W. Jr.

    1984-01-01

    Oxidized metal clusters (Na/sub x/O and K/sub x/O for 2< or =x< or =4) were formed in a gas phase reaction between metal clusters and an oxidizing gas using a double expansion technique. Their appearance potentials were measured using a molecular beam-photoionization mass spectrometer system. These first photoionization data for oxidized clusters provide information on trends of ionization potentials as a function of the degree of aggregation. The ionization potentials do not differ greatly from the analogous metallic species, but in the case of the sodium tetramer the value does fall below that of the bare metal cluster. This finding is in accord with what has been observed as an influence of impurities on the work function of the bulk sodium. The results are also of interest concerning questions of octet rule violations and hypervalency.

  10. METAL OXIDE NANOPARTICLES

    SciTech Connect

    FERNANDEZ-GARCIA,M.; RODGRIGUEZ, J.A.

    2007-10-01

    This chapter covers the fundamental science, synthesis, characterization, physicochemical properties and applications of oxide nanomaterials. Explains fundamental aspects that determine the growth and behavior of these systems, briefly examines synthetic procedures using bottom-up and top-down fabrication technologies, discusses the sophisticated experimental techniques and state of the art theory results used to characterize the physico-chemical properties of oxide solids and describe the current knowledge concerning key oxide materials with important technological applications.

  11. Search for effective spin injection heterostructures based on half-metal Heusler alloys/gallium arsenide semiconductors: A theoretical investigation

    NASA Astrophysics Data System (ADS)

    Sivakumar, Chockalingam

    Efficient electrical spin injection from half-metal (HM) electrodes into semiconducting (SC) channel material is a desirable aspect in spintronics, but a challenging one. Half-metals based on the Heusler alloy family are promising candidates as spin sources due to their compatibility with compound SCs, and very high Curie temperatures. Numerous efforts were made in the past two decades to grow atomically abrupt interfaces between HM_Heusler and SC heterostructures. However, diffusion of magnetic impurities into the semiconductor, defects and disorder near the interface, and formation of reacted phases were great challenges. A number of theoretical efforts were undertaken to understand the role of such material defects in destroying the half-metallicity and also to propose promising half-metal/SC heterostructures based on first principles. This dissertation summarizes the investigations undertaken to decode the complexity of, and to understand the various physical properties of, a number of real-world Heusler/SC heterostructure samples, based on the ab initio density functional theory (DFT) approach. In addition, it summarizes various results from the first principles-based search for promising half-metal/SC heterostructures. First, I present results from DFT-based predictive models of actual Co 2MnSi (CMS)/GaAs heterostructures grown in (001) texture. I investigate the physical, chemical, electronic, and magnetic properties to understand the complexity of these structures and to pinpoint the origin of interfacial effects, when present. Based on the investigations of such models, I discuss the utility of those actual samples in spintronic applications. Next, I summarise the results from an ab initio DFT-based survey of 6 half-Heusler half-metal/GaAs heterostructure models in (110) texture, since compound semiconductors such as GaAs have very long spin lifetime in (110) layering. I show 3 half-Heusler alloys (CoVAs, NiMnAs, and RhFeGe), that when interfaced with Ga

  12. Process for fabrication of metal oxide films

    SciTech Connect

    Tracy, C.E.; Benson, D.; Svensson, S.

    1990-07-17

    This invention is comprised of a method of fabricating metal oxide films from a plurality of reactants by inducing a reaction by plasma deposition among the reactants. The plasma reaction is effective for consolidating the reactants and producing thin films of metal oxides, e.g. electro-optically active transition metal oxides, at a high deposition rate. The presence of hydrogen during the plasma reaction enhances the deposition rate of the metal oxide. Various types of metal oxide films can be produced.

  13. Mesoporous metal oxide graphene nanocomposite materials

    DOEpatents

    Liu, Jun; Aksay, Ilhan A.; Kou, Rong; Wang, Donghai

    2016-05-24

    A nanocomposite material formed of graphene and a mesoporous metal oxide having a demonstrated specific capacity of more than 200 F/g with particular utility when employed in supercapacitor applications. A method for making these nanocomposite materials by first forming a mixture of graphene, a surfactant, and a metal oxide precursor, precipitating the metal oxide precursor with the surfactant from the mixture to form a mesoporous metal oxide. The mesoporous metal oxide is then deposited onto a surface of the graphene.

  14. First principles based proximity effect of superconductor-normal metal heterostructures

    NASA Astrophysics Data System (ADS)

    Csire, Gábor; Cserti, József; Újfalussy, Balázs

    2016-12-01

    In this paper we study the proximity effect in superconductor-normal metal heterostructures based on first principles calculations with treating the pairing potential as an adjustable parameter. The superconducting order parameter (anomalous density) is obtained from the Green-function by solving the Kohn-Sham-Bogoliubov-de Gennes equations with the Screened Korringa-Kohn-Rostoker method. The results are interpreted for an Au/Nb(0 0 1) system. The layer resolved anomalous spectral function is also obtained which is closely related to the superconducting order parameter. We find that the anomalous spectral function has the fingerprint of the Andreev scattering process and it is connected to the electron-hole ratio of the quasiparticle states. We also show that the proximity effect can be understood via the anomalous spectral function.

  15. First principles based proximity effect of superconductor-normal metal heterostructures.

    PubMed

    Csire, Gábor; Cserti, József; Újfalussy, Balázs

    2016-12-14

    In this paper we study the proximity effect in superconductor-normal metal heterostructures based on first principles calculations with treating the pairing potential as an adjustable parameter. The superconducting order parameter (anomalous density) is obtained from the Green-function by solving the Kohn-Sham-Bogoliubov-de Gennes equations with the Screened Korringa-Kohn-Rostoker method. The results are interpreted for an Au/Nb(0 0 1) system. The layer resolved anomalous spectral function is also obtained which is closely related to the superconducting order parameter. We find that the anomalous spectral function has the fingerprint of the Andreev scattering process and it is connected to the electron-hole ratio of the quasiparticle states. We also show that the proximity effect can be understood via the anomalous spectral function.

  16. Electric Field Dependent Photoluminescence in Atomically Thin Transition Metal Dichalcogenides van der Waals Heterostructures

    NASA Astrophysics Data System (ADS)

    Jauregui, Luis A.; High, Alex A.; Dibos, Alan; Joe, Andrew; Gulpinar, Elgin; Park, Hongkun; Kim, Philip

    uregui, Alex A. High, Alan Dibos, Andrew Joe, Elgin Gulpinar, Hongkun Park, Philip Kim Harvard University, Physics Department -abstract- Single layer transition metal dichalcogenides (TMDC) are 2-dimensional (2D) semiconductors characterized by a direct optical bandgap and large exciton binding energies (>100 meV). We fabricate CQW heterostructures made of 2D TMDCs with hexagonal Boron nitride (BN) as atomically thin barrier and gate dielectric, with top and bottom gate electrodes. We study the evolution of photoluminescence (PL) spectrum with varying BN barrier thickness, electric field, temperature and polarization. Our measured low-temperature (T = 3K) PL peaks show full width at half maxima on the order of ~3meV. We identify the photoluminescence peaks, corresponding to the charged exciton emission, which red shifts and its brightness increases while the neutral exciton emission becomes darker for increasing electric field.

  17. Interfacial Magnetism in Complex Oxide Heterostructures Probed by Neutrons and X-rays

    DOE PAGES

    Liu, Yaohua; Ke, Xianglin

    2015-09-02

    Magnetic complex-oxide heterostructures are of keen interest because a wealth of phenomena at the interface of dissimilar materials can give rise to fundamentally new physics and potentially valuable functionalities. Altered magnetization, novel magnetic coupling and emergent interfacial magnetism at the epitaxial layered-oxide interfaces have all been intensively investigated, which shapes our understanding on how to utilize those materials, particularly for spintronics. Neutron and x-ray based techniques have played a decisive role in characterizing interfacial magnetic structures and clarifying the underlying physics in this rapidly developing field. Here we review some recent experimental results, with an emphasis on those studied viamore » polarized neutron reflectometery and polarized x-ray absorption spectroscopy. We conclude with some perspectives.« less

  18. Interfacial Magnetism in Complex Oxide Heterostructures Probed by Neutrons and X-rays

    SciTech Connect

    Liu, Yaohua; Ke, Xianglin

    2015-09-02

    Magnetic complex-oxide heterostructures are of keen interest because a wealth of phenomena at the interface of dissimilar materials can give rise to fundamentally new physics and potentially valuable functionalities. Altered magnetization, novel magnetic coupling and emergent interfacial magnetism at the epitaxial layered-oxide interfaces have all been intensively investigated, which shapes our understanding on how to utilize those materials, particularly for spintronics. Neutron and x-ray based techniques have played a decisive role in characterizing interfacial magnetic structures and clarifying the underlying physics in this rapidly developing field. Here we review some recent experimental results, with an emphasis on those studied via polarized neutron reflectometery and polarized x-ray absorption spectroscopy. We conclude with some perspectives.

  19. SINTERING METAL OXIDES

    DOEpatents

    Roake, W.E.

    1960-09-13

    A process is given for producing uranium dioxide material of great density by preparing a compacted mixture of uranium dioxide and from 1 to 3 wt.% of calcium hydride, heating the mixture to at least 675 deg C for decomposition of the hydride and then for sintering, preferably in a vacuum, at from 1550 to 2000 deg C. Calcium metal is formed, some uranium is reduced by the calcium to the metal and a product of high density is obtained.

  20. Methods for synthesizing metal oxide nanowires

    DOEpatents

    Sunkara, Mahendra Kumar; Kumar, Vivekanand; Kim, Jeong H.; Clark, Ezra Lee

    2016-08-09

    A method of synthesizing a metal oxide nanowire includes the steps of: combining an amount of a transition metal or a transition metal oxide with an amount of an alkali metal compound to produce a mixture; activating a plasma discharge reactor to create a plasma discharge; exposing the mixture to the plasma discharge for a first predetermined time period such that transition metal oxide nanowires are formed; contacting the transition metal oxide nanowires with an acid solution such that an alkali metal ion is exchanged for a hydrogen ion on each of the transition metal oxide nanowires; and exposing the transition metal oxide nanowires to the plasma discharge for a second predetermined time period to thermally anneal the transition metal oxide nanowires. Transition metal oxide nanowires produced using the synthesis methods described herein are also provided.

  1. Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction

    NASA Astrophysics Data System (ADS)

    Stoklas, R.; Gregušová, D.; Blaho, M.; Fröhlich, K.; Novák, J.; Matys, M.; Yatabe, Z.; Kordoš, P.; Hashizume, T.

    2017-04-01

    The electrical properties of AlGaN/GaN MOSHFETs with HfO2 prepared by atomic layer deposition with and w/o oxygen-plasma treatment (further referred to as PHf-MOS and Hf-MOS) were investigated. The sub-threshold slope of the MOSHFETs (350 and 150 mV dec-1 for Hf-MOS and PHf-MOS, respectively) were lower than that for HFET (450 mV dec-1), which also correspond with lower leakage current of the MOSHFETs (˜10-8 A mm-1 at -9 V for PHf-MOS). In addition, the density of the interface states at the oxide/GaN-cap layer near the conduction band edge and mid-gap (˜5 × 1012 and 2 × 1011 cm-2 eV-1, respectively) after PHf-MOS was lower than that for Hf-MOS (˜3 × 1013 and 2 × 1012 cm-2 eV-1, respectively). From the x-ray photoemission spectroscopy analysis we observed a shift in the Auger Ga LMM peaks (0.6 eV) and an increase of the intensity area of the Ga-O bond in the Ga2p3 spectrum after the oxygen-plasma treatment, mainly because the GaN-cap layer was oxidized and Ga2O3 was formed.

  2. Generation of metal, metal oxide and metal-metal oxide powders by spray pyrolysis for microelectronic thick film applications

    NASA Astrophysics Data System (ADS)

    Majumdar, Diptarka

    Materials in powdered form have wide ranging applications. In thick film microelectronics, powders are dispersed in organic liquids to form pastes which are screen printed on ceramic substrates and fired to fabricate active and passive electronic devices. The functional phase is a metal powder in conductive pastes, a metal or conductive metal oxide powder in resistive pastes and a ceramic powder in dielectric pastes. Particulate additives such as glasses and metal oxides in pastes promote adhesion of conductor lines to the substrate, minimize shrinkage mismatch during cofiring of conductors and dielectrics and facilitate densification of the functional phase during firing. This dissertation focuses on the generation of metal, metal oxide and metal-metal oxide powders by spray pyrolysis for microelectronic applications. The important results of this work are outlined below. (1) This work has demonstrated the ability to synthesize phase-pure, micron-sized, spherical, unagglomerated metal (gold) and metal oxide (copper (I) oxide) particles by spray pyrolysis. (2) It has extended the versatility of spray pyrolysis as a powdermaking technique to include the synthesis of metal-metal oxide composite particles. Such particles have been generated for both wetting (silver-copper (II) oxide) and poorly wetting (silver-silica) metal-metal oxide pairs. (3) The sintering of thick films of the metal-metal oxide particles has indicated the possibility of retarding the sintering kinetics of silver by using composite particles of the metal with relatively refractory metal oxides.

  3. Lithium metal reduction of plutonium oxide to produce plutonium metal

    DOEpatents

    Coops, Melvin S.

    1992-01-01

    A method is described for the chemical reduction of plutonium oxides to plutonium metal by the use of pure lithium metal. Lithium metal is used to reduce plutonium oxide to alpha plutonium metal (alpha-Pu). The lithium oxide by-product is reclaimed by sublimation and converted to the chloride salt, and after electrolysis, is removed as lithium metal. Zinc may be used as a solvent metal to improve thermodynamics of the reduction reaction at lower temperatures. Lithium metal reduction enables plutonium oxide reduction without the production of huge quantities of CaO--CaCl.sub.2 residues normally produced in conventional direct oxide reduction processes.

  4. Triplet proximity effect in superconducting heterostructures with a half-metallic layer

    NASA Astrophysics Data System (ADS)

    Mironov, S.; Buzdin, A.

    2015-11-01

    We present the Usadel theory describing the superconducting proximity effect in heterostructures with a half-metallic layer. It is shown that the full spin polarization inside the half-metals gives rise to an additional component of the Green's function which results in the giant triplet spin-valve effect in superconductor (S)-ferromagnet (F)-half-metal (HM) trilayers and provides a natural explanation for the φ0-junction formation in the S/F/HM/F/S systems. In addition, we consider the exactly solvable model of the S/F/HM trilayers of atomic thickness and demonstrate that it reproduces the main features of the spin-valve effect found within the Usadel approach. Our results are shown to be in qualitative agreement with the recent experimental data on the spin-valve effect in MoGe /Ni /Cu /CrO2 hybrids [Singh et al., Phys. Rev. X 5, 021019 (2015), 10.1103/PhysRevX.5.021019].

  5. Engineered spatial inversion symmetry breaking in an oxide hetero-structure built from isosymmetric room temperature magnetically ordered components

    NASA Astrophysics Data System (ADS)

    Claridge, John; Alaria, Jonathan; Dyer, Matthew; Rosseinsky, Matthew; Borisov, Pavel; Manning, Troy; Lepadatu, Serban; Cain, Markys; Mishina, Elena; Sherstyuck, Natalia; Ilyin, N. A.; Hadermann, Joke; Lederman, David

    2014-03-01

    The oxide heterostructure [(YFeO3)5(LaFeO3)5]40,which is magnetically ordered and piezoelectric at room temperature, has been constructed from two weak ferromagnetic AFeO3 perovskites with different A cations using RHEED-monitored pulsed laser deposition. The polarisation arises by combining ordering on the A site, imposed by the periodicity of the grown structure, with appropriate orientations of the octahedral tilting, according to simple symmetry-controlled rules. Magnetization and MOKE measurements show that the heterostructure's magnetic structure is similar to that of the individual components. Evidence of the polarity was obtained from second harmonic generation and piezoelectric force microscopy measurements. Modeling of the piezoresponse allows extraction of d33 (approximately 10 pC/N) of the heterostructure, which is in agreement with DFT calculations.

  6. Ferroelectricity at the Nanoscale: Local Polarization in Oxide Thin Films and Heterostructures

    NASA Astrophysics Data System (ADS)

    Ahn, C. H.; Rabe, K. M.; Triscone, J.-M.

    2004-01-01

    Ferroelectric oxide materials have offered a tantalizing potential for applications since the discovery of ferroelectric perovskites more than 50 years ago. Their switchable electric polarization is ideal for use in devices for memory storage and integrated microelectronics, but progress has long been hampered by difficulties in materials processing. Recent breakthroughs in the synthesis of complex oxides have brought the field to an entirely new level, in which complex artificial oxide structures can be realized with an atomic-level precision comparable to that well known for semiconductor heterostructures. Not only can the necessary high-quality ferroelectric films now be grown for new device capabilities, but ferroelectrics can be combined with other functional oxides, such as high-temperature superconductors and magnetic oxides, to create multifunctional materials and devices. Moreover, the shrinking of the relevant lengths to the nanoscale produces new physical phenomena. Real-space characterization and manipulation of the structure and properties at atomic scales involves new kinds of local probes and a key role for first-principles theory.

  7. Single-crystal-like nanoporous spinel oxides: a strategy for synthesis of nanoporous metal oxides utilizing metal-cyanide hybrid coordination polymers.

    PubMed

    Zakaria, Mohamed B; Hu, Ming; Imura, Masataka; Salunkhe, Rahul R; Umezawa, Naoto; Hamoudi, Hicham; Belik, Alexei A; Yamauchi, Yusuke

    2014-12-22

    Development of a new method to synthesize nanoporous metal oxides with highly crystallized frameworks is of great interest because of their wide use in practical applications. Here we demonstrate a thermal decomposition of metal-cyanide hybrid coordination polymers (CPs) to prepare nanoporous metal oxides. During the thermal treatment, the organic units (carbon and nitrogen) are completely removed, and only metal contents are retained to prepare nanoporous metal oxides. The original nanocube shapes are well-retained even after the thermal treatment. When both Fe and Co atoms are contained in the precursors, nanoporous Fe-Co oxide with a highly oriented crystalline framework is obtained. On the other hand, when nanoporous Co oxide and Fe oxide are obtained from Co- and Fe-contacting precursors, their frameworks are amorphous and/or poorly crystallized. Single-crystal-like nanoporous Fe-Co oxide shows a stable magnetic property at room temperature compared to poly-crystalline metal oxides. We further extend this concept to prepare nanoporous metal oxides with hollow interiors. Core-shell heterostructures consisting of different metal-cyanide hybrid CPs are prepared first. Then the cores are dissolved by chemical etching using a hydrochloric acid solution (i.e., the cores are used as sacrificial templates), leading to the formation of hollow interiors in the nanocubes. These hollow nanocubes are also successfully converted to nanoporous metal oxides with hollow interiors by thermal treatment. The present approach is entirely different from the surfactant-templating approaches that traditionally have been utilized for the preparation of mesoporous metal oxides. We believe the present work proves a new way to synthesize nanoporous metal oxides with controlled crystalline frameworks and architectures. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Method for plating with metal oxides

    SciTech Connect

    Silver, Gary L.; Martin, Frank S.

    1994-08-23

    A method of plating hydrous metal oxides on at least one substrate, which method is indifferent to the electrochemical properties of the substrate, and comprises reacting metallic ions in aqueous solution with an appropriate oxidizing agent such as sodium hypochlorite or calcium sulfite with oxygen under suitable conditions of pH and concentration such that oxidation and precipitation of metal oxide are sufficiently slow to allow satisfactory plating of metal oxide on the substrate.

  9. Method for plating with metal oxides

    SciTech Connect

    Silver, G.L.; Martin, F.S.

    1994-08-23

    A method is disclosed of plating hydrous metal oxides on at least one substrate, which method is indifferent to the electrochemical properties of the substrate, and comprises reacting metallic ions in aqueous solution with an appropriate oxidizing agent such as sodium hypochlorite or calcium sulfite with oxygen under suitable conditions of pH and concentration such that oxidation and precipitation of metal oxide are sufficiently slow to allow satisfactory plating of metal oxide on the substrate. 1 fig.

  10. Method for plating with metal oxides

    DOEpatents

    Silver, G.L.; Martin, F.S.

    1994-08-23

    A method is disclosed of plating hydrous metal oxides on at least one substrate, which method is indifferent to the electrochemical properties of the substrate, and comprises reacting metallic ions in aqueous solution with an appropriate oxidizing agent such as sodium hypochlorite or calcium sulfite with oxygen under suitable conditions of pH and concentration such that oxidation and precipitation of metal oxide are sufficiently slow to allow satisfactory plating of metal oxide on the substrate. 1 fig.

  11. Copper Oxide Substrates and Epitaxial Copper Oxide/Zinc Oxide Thin Film Heterostructures for Solar Energy Conversion

    NASA Astrophysics Data System (ADS)

    Darvish, Davis Solomon

    Future fossil fuel scarcity and environmental degradation have demonstrated the need for renewable, low-carbon sources of energy to power an increasingly industrialized world. Solar energy with its infinite supply makes it an extraordinary resource that should not go unused. However with current materials, adoption is limited by cost and so a paradigm shift must occur to get everyone on the same page embracing solar technology. Cuprous Oxide (Cu2O) is a promising earth abundant material that can be a great alternative to traditional thin-film photovoltaic materials like CIGS, CdTe, etc. We have prepared Cu 2O bulk substrates by the thermal oxidation of copper foils as well Cu2O thin films deposited via plasma-assisted Molecular Beam Epitaxy. From preliminary Hall measurements it was determined that Cu2O would need to be doped extrinsically. This was further confirmed by simulations of ZnO/Cu2O heterojunctions. A cyclic interdependence between, defect concentration, minority carrier lifetime, film thickness, and carrier concentration manifests itself a primary reason for why efficiencies greater than 4% has yet to be realized. Our growth methodology for our thin-film heterostructures allow precise control of the number of defects that incorporate into our film during both equilibrium and nonequilibrium growth. We also report process flow/device design/fabrication techniques in order to create a device. A typical device without any optimizations exhibited open-circuit voltages Voc, values in excess 500mV; nearly 18% greater than previous solid state devices.

  12. Controlled Synthesis and Utilization of Metal and Oxide Hybrid Nanoparticles

    NASA Astrophysics Data System (ADS)

    Crane, Cameron

    This dissertation reports the development of synthetic methods concerning rationally-designed, hybrid, and multifunctional nanomaterials. These methods are based on a wet chemical, solution phase approach that utilizes the knowledge of synthetic organic and inorganic chemistry to generate building blocks in solution for the growth of nanocrystals and hybrid nanostructures. This work builds on the prior knowledge of shape-controlled synthesis of noble metal nanocrystals and expands into the challenging realm of the more reactive first row transition metals. Specifically, a microemulsion sol-gel method was developed to synthesize Au-SiO2 dimers as precursors for the synthesis of segmented heterostructures of noble metals that can be used for catalysis. This microemulsion sol-gel method was modified to synthesize an aqueous suspension of oxidation-resistant Cu-SiO2 core-shell nanoparticles that can be used for sensing and catalysis. A thermal decomposition approach was developed, wherein zero-valence metal precursor complexes in the presence of seed nanoparticles produced metal-metal oxide core-shell structures with well-controlled shell thickness. This method was demonstrated on AuCu 3-Fe3O4, AuCu3-NiO, and AuCu3 -MnO core-shell systems. Switching the core from AuCu3 alloy to pure Cu, this method could extend to Cu-Fe3O4 and Cu-MnO systems. Further etching the Cu core in these core-shell structures led to the formation of the hollow metal oxides which provides a versatile route to hollow nanostructures of metal oxides. This work develops the synthetic library of tools for the production of hybrid nanostructures with multiple functionalities.

  13. Preparation of uniform nanoparticles of ultra-high purity metal oxides, mixed metal oxides, metals, and metal alloys

    DOEpatents

    Woodfield, Brian F.; Liu, Shengfeng; Boerio-Goates, Juliana; Liu, Qingyuan; Smith, Stacey Janel

    2012-07-03

    In preferred embodiments, metal nanoparticles, mixed-metal (alloy) nanoparticles, metal oxide nanoparticles and mixed-metal oxide nanoparticles are provided. According to embodiments, the nanoparticles may possess narrow size distributions and high purities. In certain preferred embodiments, methods of preparing metal nanoparticles, mixed-metal nanoparticles, metal oxide nanoparticles and mixed-metal nanoparticles are provided. These methods may provide tight control of particle size, size distribution, and oxidation state. Other preferred embodiments relate to a precursor material that may be used to form nanoparticles. In addition, products prepared from such nanoparticles are disclosed.

  14. Topological phase transition coupled with spin-valley physics in ferroelectric oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Yamauchi, Kunihiko; Barone, Paolo; Picozzi, Silvia

    2017-01-01

    The possibility to engineer the coupling of spin and valley physics is explored in ferroelectric oxide heterostructures with eg2 electronic configuration. We show that the polar structural distortion induces the appearance of spin-valley coupled properties, at the same time as being responsible for a topological transition from a quantum spin-Hall insulating phase to a trivial band insulator. The coupled spin-valley physics is affected by the topological band inversion in a nontrivial way; while the valley-dependent spin polarization of both conduction and valence bands is preserved, a change of the Berry curvature and of spin-valley selection rules is predicted, leading to different circular dichroic response as well as valley and spin Hall effects.

  15. The calculation of semipolar orientations for wurtzitic semiconductor heterostructures: application to nitrides and oxides

    NASA Astrophysics Data System (ADS)

    Bigenwald, P.; Gil, B.; Benharrats, F.; Zitouni, K.; Kadri, A.

    2012-02-01

    We investigate how the template crystal orientation indices (hk. l) can influence the intensity of density of elastic energy and polarization fields in wurtzite nitrides and oxides semiconductor strained layer heterostructures. We propose analytical relations between the angle Θ, defined as the direction of the sixfold axis of unstrained material and the direction normal to the growth plane, and (i) the value of the total polarization and (ii) the density of elastic energy stored in the strained layer. We find that quasi-cancellation of quantum confined stark effect (QCSE) can be generally obtained by carefully selecting the (hk. l) set. This situation does not lead to minimal strain density of elastic energy, but the increase of this parameter may be moderate compared to the minimum value. In the case of materials submitted to biaxial tension, we observe that the total density of elastic energy stored shows no minimum except when Θ = 0.

  16. Systematic study of electronic structure and band alignment of monolayer transition metal dichalcogenides in Van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Zhang, Chenxi; Gong, Cheng; Nie, Yifan; Min, Kyung-Ah; Liang, Chaoping; Oh, Young Jun; Zhang, Hengji; Wang, Weihua; Hong, Suklyun; Colombo, Luigi; Wallace, Robert M.; Cho, Kyeongjae

    2017-03-01

    Two-dimensional transition metal dichalcogenides (TMDs) are promising low-dimensional materials which can produce diverse electronic properties and band alignment in van der Waals heterostructures. Systematic density functional theory (DFT) calculations are performed for 24 different TMD monolayers and their bilayer heterostacks. DFT calculations show that monolayer TMDs can behave as semiconducting, metallic or semimetallic depending on their structures; we also calculated the band alignment of the TMDs to predict their alignment in van der Waals heterostacks. We have applied the charge equilibration model (CEM) to obtain a quantitative formula predicting the highest occupied state of any type of bilayer TMD heterostacks (552 pairs for 24 TMDs). The CEM predicted values agree quite well with the selected DFT simulation results. The quantitative prediction of the band alignment in the TMD heterostructures can provide an insightful guidance to the development of TMD-based devices.

  17. Research Update: Interface-engineered oxygen octahedral tilts in perovskite oxide heterostructures

    SciTech Connect

    Kan, Daisuke Aso, Ryotaro; Kurata, Hiroki; Shimakawa, Yuichi

    2015-06-01

    Interface engineering of structural distortions is a key for exploring the functional properties of oxide heterostructures and superlattices. In this paper, we report on our comprehensive investigations of oxygen octahedral distortions at the heterointerface between perovskite oxides SrRuO{sub 3} and BaTiO{sub 3} on GdScO{sub 3} substrates and of the influences of the interfacially engineered distortions on the magneto-transport properties of the SrRuO{sub 3} layer. Our state-of-the-art annular bright-field imaging in aberration-corrected scanning transmission electron microscopy revealed that the RuO{sub 6} octahedral distortions in the SrRuO{sub 3} layer have strong dependence on the stacking order of the SrRuO{sub 3} and BaTiO{sub 3} layers on the substrate. This can be attributed to the difference in the interfacial octahedral connections. We also found that the stacking order of the oxide layers has a strong impact on the magneto-transport properties, allowing for control of the magnetic anisotropy of the SrRuO{sub 3} layer through interface engineering. Our results demonstrate the significance of the interface engineering of the octahedral distortions on the structural and physical properties of perovskite oxides.

  18. Comparative study of LaNiO3/LaAlO3 heterostructures grown by pulsed laser deposition and oxide molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Wrobel, F.; Mark, A. F.; Christiani, G.; Sigle, W.; Habermeier, H.-U.; van Aken, P. A.; Logvenov, G.; Keimer, B.; Benckiser, E.

    2017-01-01

    Variations in growth conditions associated with different deposition techniques can greatly affect the phase stability and defect structure of complex oxide heterostructures. We synthesized superlattices of the paramagnetic metal LaNiO3 and the large band gap insulator LaAlO3 by atomic layer-by-layer molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) and compared their crystallinity and microstructure as revealed by high-resolution transmission electron microscopy images and resistivity. The MBE samples show a higher density of stacking faults but smoother interfaces and generally higher electrical conductivity. Our study identifies the opportunities and challenges of MBE and PLD growth and serves as a general guide for the choice of the deposition technique for perovskite oxides.

  19. Ferromagnetic Schottky junctions using half-metallic Co{sub 2}MnSi/diamond heterostructures

    SciTech Connect

    Ueda, K.; Soumiya, T.; Nishiwaki, M.; Asano, H.

    2013-07-29

    We demonstrate half-metallic Heusler Co{sub 2}MnSi films epitaxially grown on diamond semiconductors using the ion-beam assisted sputtering method. Lower temperature growth below ∼400 °C is key for obtaining abrupt Co{sub 2}MnSi/diamond interfaces. The Co{sub 2}MnSi films on diamond showed a negative anisotropic magnetoresistance of ∼0.2% at 10 K, suggesting the half-metallic nature of the Co{sub 2}MnSi films. Schottky junctions formed using the Co{sub 2}MnSi/diamond heterostructures at 400 °C showed clear rectification properties with a rectification ratio of ∼10{sup 3}. The Schottky barrier heights of the Co{sub 2}MnSi/diamond interfaces were estimated to be ∼0.8 eV. These results indicate that Co{sub 2}MnSi is a promising spin source for spin injection into diamond.

  20. Constructing heterostructure on highly roughened caterpillar-like gold nanotubes with cuprous oxide grains for ultrasensitive and stable nonenzymatic glucose sensor.

    PubMed

    Chen, Anran; Ding, Yu; Yang, Zhimao; Yang, Shengchun

    2015-12-15

    In this study, a metal-metal oxide heterostructure was designed and constructed by growing cuprous oxide (Cu2O) grains on highly surface roughened caterpillar-like Au nanotubes (CLGNs) for ultrasensitive, selective and stable nonenzymatic glucose biosensors. The Cu2O grains are tightly anchored to the surface of CLGNs by the spines, resulting in a large increase in the contact area between Cu2O grains and the CLGNs, which facilitates the electron transport between metal and metal oxide and improves the sensitivity and stability of the sensors. The electron transfer coefficient (α) and electron transfer rate constant (ks) for redox reaction of Cu2O-CLGNs/GCE are found to be 0.50114 and 3.24±0.1 s(-1), respectively. The biosensor shows a linear response to glucose over a concentration range of 0.1-5mM and a high sensitivity of 1215.7 µA mM(-1) cm(-2) with a detection limit of 1.83 μM. Furthermore, the Cu2O-CLGNs biosensor exhibited strong anti-interference capability against uric acid (UA), ascorbic acid (AA), potassium chloride (KCl) and sodium ascorbate (SA), as well as a high stability and repeatability. Our current research indicates that the Cu2O-CLGNs hybrid electrode is a promising choice for constructing nonenzyme based electrochemical biosensors.

  1. Native-oxide masked impurity-induced layer disordering of AlxGa1 - xAs quantum well heterostructures

    NASA Astrophysics Data System (ADS)

    Dallesasse, J. M.; Holonyak, N., Jr.; El-Zein, N.; Richard, T. A.; Kish, F. A.; Sugg, A. R.; Burnham, R. D.; Smith, S. C.

    1991-03-01

    Data are presented showing that the native oxide that can be formed on high Al composition AlxGa1-xAs (x≳0.7) confining layers on AlyGa1-yAs-AlzGa1-zAs (y≳z) superlattices or quantum well heterostructures serves as an effective mask against impurity diffusion (Zn or Si), and thus against impurity-induced layer disordering. The high quality native oxide is produced by the conversion of high Al composition AlxGa1-xAs (x≳0.7) confining layers, which can be grown on a variety of heterostructures, via H2O vapor oxidation (≳400 °C) in an N2 carrier gas.

  2. Deficiency of the bulk spin Hall effect model for spin-orbit torques in magnetic-insulator/heavy-metal heterostructures

    NASA Astrophysics Data System (ADS)

    Li, Junxue; Yu, Guoqiang; Tang, Chi; Liu, Yizhou; Shi, Zhong; Liu, Yawen; Navabi, Aryan; Aldosary, Mohammed; Shao, Qiming; Wang, Kang L.; Lake, Roger; Shi, Jing

    2017-06-01

    Electrical currents in a magnetic-insulator/heavy-metal heterostructure can induce two simultaneous effects, namely, spin Hall magnetoresistance (SMR) on the heavy-metal side and spin-orbit torques (SOTs) on the magnetic-insulator side. Within the framework of a pure spin current model based on the bulk spin Hall effect (SHE), the ratio of the spin Hall-induced anomalous Hall effect (SH-AHE) to SMR should be equal to the ratio of the fieldlike torque (FLT) to the dampinglike torque (DLT). We perform a quantitative study of SMR, SH-AHE, and SOTs in a series of thulium iron garnet/platinum or T m3F e5O12/Pt heterostructures with different T m3F e5O12 thicknesses, where T m3F e5O12 is a ferrimagnetic insulator with perpendicular magnetic anisotropy. We find the ratio between the measured effective fields of FLT and DLT is at least two times larger than the ratio of the SH-AHE to SMR. In addition, the bulk SHE model grossly underestimates the spin-torque efficiency of FLT. Our results reveal deficiencies of the bulk SHE model and also address the importance of interfacial effects such as the Rashba and magnetic proximity effects in magnetic-insulator/heavy-metal heterostructures.

  3. n-VO2/p-GaN based nitride-oxide heterostructure with various thickness of VO2 layer grown by MBE

    NASA Astrophysics Data System (ADS)

    Wang, Minhuan; Bian, Jiming; Sun, Hongjun; Liu, Weifeng; Zhang, Yuzhi; Luo, Yingmin

    2016-12-01

    High quality VO2 films with precisely controlled thickness were grown on p-GaN/sapphire substrates by oxide molecular beam epitaxy (O-MBE). Results indicated that a distinct reversible semiconductor-to-metal (SMT) phase transition was observed for all the samples in the temperature dependent electrical resistance measurement, and the influence of VO2 layer thickness on the SMT properties of the as-grown n-VO2/p-GaN based nitride-oxide heterostructure was investigated. Meanwhile, the clear rectifying transport characteristics originated from the n-VO2/p-GaN interface were demonstrated before and after SMT of the VO2 over layer, which were attributed to the p-n junction behavior and Schottky contact character, respectively. Moreover, the X-ray photoelectron spectroscopy (XPS) analyses confirmed the valence state of vanadium (V) in VO2 films was principally composed of V4+ with trace amount of V5+. The design and modulation of the n-VO2/p-GaN based heterostructure devices will benefit significantly from these achievements.

  4. Molecular Level Coating of Metal Oxide Particles

    NASA Technical Reports Server (NTRS)

    McDaniel, Patricia R. (Inventor); St.Clair, Terry L. (Inventor)

    2002-01-01

    Polymer encapsulated metal oxide particles are prepared by combining a polyamide acid in a polar osmotic solvent with a metal alkoxide solution. The polymer was imidized and the metal oxide formed simultaneously in a refluxing organic solvent. The resulting polymer-metal oxide is an intimately mixed commingled blend, possessing, synergistic properties of both the polymer and preceramic metal oxide. The encapsulated metal oxide particles have multiple uses including, being useful in the production of skin lubricating creams, weather resistant paints, as a filler for paper. making ultraviolet light stable filled printing ink, being extruded into fibers or ribbons, and coatings for fibers used in the production of composite structural panels.

  5. Molecular Level Coating for Metal Oxide Particles

    NASA Technical Reports Server (NTRS)

    McDaniel, Patricia R. (Inventor); Saint Clair, Terry L. (Inventor)

    2000-01-01

    Polymer encapsulated metal oxide particles are prepared by combining a polyamide acid in a polar aprotic solvent with a metal alkoxide solution. The polymer was imidized and the metal oxide formed simultaneously in a refluxing organic solvent. The resulting polymer-metal oxide is an intimately mixed commingled blend, possessing synergistic properties of both the polymer and preceramic metal oxide. The encapsulated metal oxide particles have multiple uses including, being useful in the production of skin lubricating creams, weather resistant paints, as a filler for paper, making ultraviolet light stable filled printing ink, being extruded into fibers or ribbons, and coatings for fibers used in the production of composite structural panels.

  6. Molecular Level Coating of Metal Oxide Particles

    NASA Technical Reports Server (NTRS)

    McDaniel, Patricia R. (Inventor); St.Clair, Terry L. (Inventor)

    2002-01-01

    Polymer encapsulated metal oxide particles are prepared by combining a polyamide acid in a polar osmotic solvent with a metal alkoxide solution. The polymer was imidized and the metal oxide formed simultaneously in a refluxing organic solvent. The resulting polymer-metal oxide is an intimately mixed commingled blend, possessing, synergistic properties of both the polymer and preceramic metal oxide. The encapsulated metal oxide particles have multiple uses including, being useful in the production of skin lubricating creams, weather resistant paints, as a filler for paper. making ultraviolet light stable filled printing ink, being extruded into fibers or ribbons, and coatings for fibers used in the production of composite structural panels.

  7. Electrical transport and spin polarization effects in superconductor/ferromagnet oxide heterostructure vertical transport devices

    NASA Astrophysics Data System (ADS)

    Kraus, Philip Allan

    1999-12-01

    Thin film heterostructures of cuprate superconductors (S) and manganite ferromagnets (F) have been successfully grown by molecular beam epitaxy (MBE). The epitaxial bilayers were patterned into devices for spin-injection from the ferromagnet into the superconductor for study of the effects of spin-polarization on Andreev reflection and critical current suppression in the superconductor. Heterostructure bilayers of the perovskite oxides DyBa2Cu 3O7-x (DBCO) and La2/3Ba1/3MnO 3 (LBMO) can be grown as single crystal thin films with few secondary phases by employing the block-by-block MBE deposition technique. Considerable effort was expended to make samples with nearly ideal DBCO surfaces, because the LBMO was deposited on top of the DBCO and the quality of the S-F interface determined the nature of the effects observed. In particular, if the spinpolarized carriers are to traverse the interface without spin disorder scattering, the S-F interface should be free of unwanted chemical reactions between the DBCO and LBMO. Reflection high-energy electron diffraction was used to determine the quality of the growing interface in- situ. Samples of the as-grown heterostructures were patterned into mesa structures for vertical transport experiments, i.e., the current flowed nominally perpendicular to the plane of the interface. The patterning was done with low energy, low ion-density Ar ion milling, with the sample at 77 K. An oxygen anneal of the paterned sample achieved an oxygen doping in the DBCO high enough to form the superconducting phase. Insulating and contact layers were deposited to prepare the devices for measurement. Transport measurements were carried out at temperatures in the range 2 to 300 K and magnetic fields up to 12 T. The measurements made were the conductance-voltage characteristic of the S-F interface and suppression of the critical current by injection of current from the ferromagnetic. The design permitted both experiments to be performed on the same

  8. Metals, toxicity and oxidative stress.

    PubMed

    Valko, M; Morris, H; Cronin, M T D

    2005-01-01

    Metal-induced toxicity and carcinogenicity, with an emphasis on the generation and role of reactive oxygen and nitrogen species, is reviewed. Metal-mediated formation of free radicals causes various modifications to DNA bases, enhanced lipid peroxidation, and altered calcium and sulfhydryl homeostasis. Lipid peroxides, formed by the attack of radicals on polyunsaturated fatty acid residues of phospholipids, can further react with redox metals finally producing mutagenic and carcinogenic malondialdehyde, 4-hydroxynonenal and other exocyclic DNA adducts (etheno and/or propano adducts). Whilst iron (Fe), copper (Cu), chromium (Cr), vanadium (V) and cobalt (Co) undergo redox-cycling reactions, for a second group of metals, mercury (Hg), cadmium (Cd) and nickel (Ni), the primary route for their toxicity is depletion of glutathione and bonding to sulfhydryl groups of proteins. Arsenic (As) is thought to bind directly to critical thiols, however, other mechanisms, involving formation of hydrogen peroxide under physiological conditions, have been proposed. The unifying factor in determining toxicity and carcinogenicity for all these metals is the generation of reactive oxygen and nitrogen species. Common mechanisms involving the Fenton reaction, generation of the superoxide radical and the hydroxyl radical appear to be involved for iron, copper, chromium, vanadium and cobalt primarily associated with mitochondria, microsomes and peroxisomes. However, a recent discovery that the upper limit of "free pools" of copper is far less than a single atom per cell casts serious doubt on the in vivo role of copper in Fenton-like generation of free radicals. Nitric oxide (NO) seems to be involved in arsenite-induced DNA damage and pyrimidine excision inhibition. Various studies have confirmed that metals activate signalling pathways and the carcinogenic effect of metals has been related to activation of mainly redox-sensitive transcription factors, involving NF-kappaB, AP-1 and p53

  9. Method for preparing hollow metal oxide microsphere

    DOEpatents

    Schmitt, C.R.

    1974-02-12

    Hollow refractory metal oxide microspheres are prepared by impregnating resinous microspheres with a metallic compound, drying the impregnated microspheres, heating the microspheres slowly to carbonize the resin, and igniting the microspheres to remove the carbon and to produce the metal oxide. Zirconium oxide is given as an example. (Official Gazette)

  10. Graphene-supported metal oxide monolith

    DOEpatents

    Worsley, Marcus A.; Baumann, Theodore F.; Biener, Juergen; Biener, Monika A.; Wang, Yinmin; Ye, Jianchao; Tylski, Elijah

    2017-01-10

    A composition comprising at least one graphene-supported metal oxide monolith, said monolith comprising a three-dimensional structure of graphene sheets crosslinked by covalent carbon bonds, wherein the graphene sheets are coated by at least one metal oxide such as iron oxide or titanium oxide. Also provided is an electrode comprising the aforementioned graphene-supported metal oxide monolith, wherein the electrode can be substantially free of any carbon-black and substantially free of any binder.

  11. Quasi-Two-Dimensional h-BN/β-Ga2O3 Heterostructure Metal-Insulator-Semiconductor Field-Effect Transistor.

    PubMed

    Kim, Janghyuk; Mastro, Michael A; Tadjer, Marko J; Kim, Jihyun

    2017-06-28

    β-gallium oxide (β-Ga2O3) and hexagonal boron nitride (h-BN) heterostructure-based quasi-two-dimensional metal-insulator-semiconductor field-effect transistors (MISFETs) were demonstrated by integrating mechanical exfoliation of (quasi)-two-dimensional materials with a dry transfer process, wherein nanothin flakes of β-Ga2O3 and h-BN were utilized as the channel and gate dielectric, respectively, of the MISFET. The h-BN dielectric, which has an extraordinarily flat and clean surface, provides a minimal density of charged impurities on the interface between β-Ga2O3 and h-BN, resulting in superior device performances (maximum transconductance, on/off ratio, subthreshold swing, and threshold voltage) compared to those of the conventional back-gated configurations. Also, double-gating of the fabricated device was demonstrated by biasing both top and bottom gates, achieving the modulation of the threshold voltage. This heterostructured wide-band-gap nanodevice shows a new route toward stable and high-power nanoelectronic devices.

  12. Photovoltaic effect in an indium-tin-oxide/ZnO/BiFeO3/Pt heterostructure

    NASA Astrophysics Data System (ADS)

    Fan, Zhen; Yao, Kui; Wang, John

    2014-10-01

    We have studied the photovoltaic effect in a metal/semiconductor/ferroelectric/metal heterostructure of In2O3-SnO2/ZnO/BiFeO3/Pt (ITO/ZnO/BFO/Pt) multilayer thin films. The heterolayered structure shows a short-circuit current density (Jsc) of 340 μA/cm2 and an energy conversion efficiency of up to 0.33% under blue monochromatic illumination. The photovoltaic mechanism, specifically in terms of the major generation site of photo-excited electron-hole (e-h) pairs and the driving forces for the separation of e-h pairs, is clarified. The significant increase in photocurrent of the ITO/ZnO/BFO/Pt compared to that of ITO/BFO/Pt is attributed to the abundant e-h pairs generated from ZnO. Ultraviolet photoelectron spectroscopy reveals the energy band alignment of ITO/ZnO/BFO/Pt, where a Schottky barrier and an n+-n junction are formed at the BFO/Pt and ZnO/BFO interfaces, respectively. Therefore, two built-in fields developed at the two interfaces are constructively responsible for the separation and transport of photo-excited e-h pairs.

  13. Optical properties of transition metal oxide quantum wells

    NASA Astrophysics Data System (ADS)

    Lin, Chungwei; Posadas, Agham; Choi, Miri; Demkov, Alexander A.

    2015-01-01

    Fabrication of a quantum well, a structure that confines the electron motion along one or more spatial directions, is a powerful method of controlling the electronic structure and corresponding optical response of a material. For example, semiconductor quantum wells are used to enhance optical properties of laser diodes. The ability to control the growth of transition metal oxide films to atomic precision opens an exciting opportunity of engineering quantum wells in these materials. The wide range of transition metal oxide band gaps offers unprecedented control of confinement while the strong correlation of d-electrons allows for various cooperative phenomena to come into play. Here, we combine density functional theory and tight-binding model Hamiltonian analysis to provide a simple physical picture of transition metal oxide quantum well states using a SrO/SrTiO3/SrO heterostructure as an example. The optical properties of the well are investigated by computing the frequency-dependent dielectric functions. The effect of an external electric field, which is essential for electro-optical devices, is also considered.

  14. Optical properties of transition metal oxide quantum wells

    SciTech Connect

    Lin, Chungwei; Posadas, Agham; Choi, Miri; Demkov, Alexander A.

    2015-01-21

    Fabrication of a quantum well, a structure that confines the electron motion along one or more spatial directions, is a powerful method of controlling the electronic structure and corresponding optical response of a material. For example, semiconductor quantum wells are used to enhance optical properties of laser diodes. The ability to control the growth of transition metal oxide films to atomic precision opens an exciting opportunity of engineering quantum wells in these materials. The wide range of transition metal oxide band gaps offers unprecedented control of confinement while the strong correlation of d-electrons allows for various cooperative phenomena to come into play. Here, we combine density functional theory and tight-binding model Hamiltonian analysis to provide a simple physical picture of transition metal oxide quantum well states using a SrO/SrTiO{sub 3}/SrO heterostructure as an example. The optical properties of the well are investigated by computing the frequency-dependent dielectric functions. The effect of an external electric field, which is essential for electro-optical devices, is also considered.

  15. Ultrafast Study of Dynamic Exchange Coupling in Ferromagnet/Oxide/Semiconductor Heterostructures

    NASA Astrophysics Data System (ADS)

    Ou, Yu-Sheng

    Spintronics is the area of research that aims at utilizing the quantum mechanical spin degree of freedom of electrons in solid-state materials for information processing and data storage application. Since the discovery of the giant magnetoresistance, the field of spintronics has attracted lots of attention for its numerous potential advantages over contemporary electronics, such as less power consumption, high integration density and non-volatility. The realization of a spin battery, defined by the ability to create spin current without associated charge current, has been a long-standing goal in the field of spintronics. The demonstration of pure spin current in ferromagnet/nonmagnetic material hybrid structures by ferromagnetic resonance spin pumping has defined a thrilling direction for this field. As such, this dissertation targets at exploring the spin and magnetization dynamics in ferromagnet/oxide/semiconductor heterostructures (Fe/MgO/GaAs) using time-resolved optical pump-probe spectroscopy with the long-range goal of understanding the fundamentals of FMR-driven spin pumping. Fe/GaAs heterostructures are complex systems that contain multiple spin species, including paramagnetic spins (GaAs electrons), nuclear spins (Ga and As nuclei) and ferromagnetic spins (Fe). Optical pump-probe studies on their interplay have revealed a number of novel phenomena that has not been explored before. As such they will be the major focus of this dissertation. First, I will discuss the effect of interfacial exchange coupling on the GaAs free-carrier spin relaxation. Temperature- and field-dependent spin-resolved pump-probe studies reveal a strong correlation of the electron spin relaxation with carrier freeze-out, in quantitative agreement with a theoretical interpretation that at low temperatures the free-carrier spin lifetime is dominated by inhomogeneity in the local hyperfine field due to carrier localization. Second, we investigate the impact of tunnel barrier thickness

  16. Hot-electron transfer from the semiconductor domain to the metal domain in CdSe@CdS{Au} nano-heterostructures.

    PubMed

    Dana, Jayanta; Maity, Partha; Ghosh, Hirendra N

    2017-07-13

    Semiconductor-metal hybrid nanostructures are recognized as great materials due to their high level of light-induced charge separation, which has direct relevance in photocatalysis and solar energy conversion. To understand the mechanism of charge separation processes, hybrid CdSe@CdS{Au} nano-heterostructures containing Au nanoparticles (NPs) with different sizes were synthesized, and the ultrafast charge-transfer dynamics were monitored using femtosecond transient absorption spectroscopy. Steady-state optical absorption studies suggest the formation of charge-transfer complexes between core shell nanocrystals (NCs) and Au NPs. Steady-state and time-resolved luminescence spectroscopy suggest electron transfer from the photo-excited CdSe@CdS core shell QDs NCs to the Au NPs within the heterostructure. The ultrafast interfacial electron-transfer dynamics in the heterostructures were monitored by femtosecond transient absorption spectroscopy. The results revealed that both hot and thermalized electrons are transferred from the core shell QDs to the metal NPs with time constants of 150 and 300 fs, respectively. Hot-electron transfer from QDs to Au NPs was found to take place predominantly in the heterostructures depending on the sizes of the metal NPs. The photo-degradation of rhodamin B in the presence of the CdSe@CdS{Au} heterostructures under visible-light radiation suggests that the hot electrons in the heterostructures play a major role in photocatalytic degradation.

  17. Orbital reconstruction in nonpolar tetravalent transition-metal oxide layers

    NASA Astrophysics Data System (ADS)

    Bogdanov, Nikolay A.; Katukuri, Vamshi M.; Romhányi, Judit; Yushankhai, Viktor; Kataev, Vladislav; Büchner, Bernd; van den Brink, Jeroen; Hozoi, Liviu

    2015-06-01

    A promising route to tailoring the electronic properties of quantum materials and devices rests on the idea of orbital engineering in multilayered oxide heterostructures. Here we show that the interplay of interlayer charge imbalance and ligand distortions provides a knob for tuning the sequence of electronic levels even in intrinsically stacked oxides. We resolve in this regard the d-level structure of layered Sr2IrO4 by electron spin resonance. While canonical ligand-field theory predicts g||-factors less than 2 for positive tetragonal distortions as present in Sr2IrO4, the experiment indicates g|| is greater than 2. This implies that the iridium d levels are inverted with respect to their normal ordering. State-of-the-art electronic-structure calculations confirm the level switching in Sr2IrO4, whereas we find them in Ba2IrO4 to be instead normally ordered. Given the nonpolar character of the metal-oxygen layers, our findings highlight the tetravalent transition-metal 214 oxides as ideal platforms to explore d-orbital reconstruction in the context of oxide electronics.

  18. Superconductivity-induced magnetization depletion in a ferromagnet through an insulator in a ferromagnet-insulator-superconductor hybrid oxide heterostructure.

    PubMed

    Prajapat, C L; Singh, Surendra; Paul, Amitesh; Bhattacharya, D; Singh, M R; Mattauch, S; Ravikumar, G; Basu, S

    2016-05-21

    Coupling between superconducting and ferromagnetic states in hybrid oxide heterostructures is presently a topic of intense research. Such a coupling is due to the leakage of the Cooper pairs into the ferromagnet. However, tunneling of the Cooper pairs though an insulator was never considered plausible. Using depth sensitive polarized neutron reflectivity we demonstrate the coupling between superconductor and magnetic layers in epitaxial La2/3Ca1/3MnO3 (LCMO)/SrTiO3/YBa2Cu3O7-δ (YBCO) hybrid heterostructures, with SrTiO3 as an intervening oxide insulator layer between the ferromagnet and the superconductor. Measurements above and below the superconducting transition temperature (TSC) of YBCO demonstrate a large modulation of magnetization in the ferromagnetic layer below the TSC of YBCO in these heterostructures. This work highlights a unique tunneling phenomenon between the epitaxial layers of an oxide superconductor (YBCO) and a magnetic layer (LCMO) through an insulating layer. Our work would inspire further investigations on the fundamental aspect of a long range order of the triplet spin-pairing in hybrid structures.

  19. Superconductivity-induced magnetization depletion in a ferromagnet through an insulator in a ferromagnet-insulator-superconductor hybrid oxide heterostructure

    NASA Astrophysics Data System (ADS)

    Prajapat, C. L.; Singh, Surendra; Paul, Amitesh; Bhattacharya, D.; Singh, M. R.; Mattauch, S.; Ravikumar, G.; Basu, S.

    2016-05-01

    Coupling between superconducting and ferromagnetic states in hybrid oxide heterostructures is presently a topic of intense research. Such a coupling is due to the leakage of the Cooper pairs into the ferromagnet. However, tunneling of the Cooper pairs though an insulator was never considered plausible. Using depth sensitive polarized neutron reflectivity we demonstrate the coupling between superconductor and magnetic layers in epitaxial La2/3Ca1/3MnO3 (LCMO)/SrTiO3/YBa2Cu3O7-δ (YBCO) hybrid heterostructures, with SrTiO3 as an intervening oxide insulator layer between the ferromagnet and the superconductor. Measurements above and below the superconducting transition temperature (TSC) of YBCO demonstrate a large modulation of magnetization in the ferromagnetic layer below the TSC of YBCO in these heterostructures. This work highlights a unique tunneling phenomenon between the epitaxial layers of an oxide superconductor (YBCO) and a magnetic layer (LCMO) through an insulating layer. Our work would inspire further investigations on the fundamental aspect of a long range order of the triplet spin-pairing in hybrid structures.

  20. Method of recovering volatile metals from material containing metal oxides

    SciTech Connect

    Santen, S.

    1984-12-18

    A method of reducing and recovering volatile metal from metal oxides comprising the steps of injecting metal oxide-containing material into a shaft reactor, simultaneously injecting reducing agent into said reactor, continuously maintaining said reactor substantially filled with coke, supplying thermal energy to the reactor, preferably by means of a plasma burner, such that at least some of the metal oxides are reduced to metal and melted or volatilized depending upon whether the metal is volatile. The melted metal is removed from the bottom of the reactor while the volatilized metal is permitted to flow upwardly through the shaft reactor in the form of metal vapor together with a gas flow. The coke in the shaft reactor through which the volatilized metal passes is maintained at a temperature in excess of 1000/sup 0/ C., thus screening the upper portion of the shaft reactor and the reactor top by means of the coke so as to prevent condensation of the volatilized metal.

  1. Co-Al mixed metal oxides/carbon nanotubes nanocomposite prepared via a precursor route and enhanced catalytic property

    SciTech Connect

    Fan Guoli; Wang Hui; Xiang Xu; Li Feng

    2013-01-15

    The present work reported the synthesis of Co-Al mixed metal oxides/carbon nanotubes (CoAl-MMO/CNT) nanocomposite from Co-Al layered double hydroxide/CNTs composite precursor (CoAl-LDH/CNT). The materials were characterized by powder X-ray diffraction (XRD), transmission electron microscopy (TEM), low temperature nitrogen adsorption-desorption experiments, thermogravimetric and differential thermal analyses (TG-DTA), Raman spectra and X-ray photoelectron spectroscopy (XPS). The results revealed that in CoAl-MMO/CNT nanocomposite, the nanoparticles of cobalt oxide (CoO) and Co-containing spinel-type complex metal oxides could be well-dispersed on the surface of CNTs, thus forming the heterostructure of CoAl-MMO and CNTs. Furthermore, as-synthesized CoAl-MMO/CNT nanocomposite was utilized as additives for catalytic thermal decomposition of ammonium perchlorate (AP). Compared to those for pure AP and CoAl-MMO, the peak temperature of AP decomposition for CoAl-MMO/CNT was significantly decreased, which is attributed to the novel heterostructure and synergistic effect of multi-component metal oxides of nanocomposite. - Graphical abstract: Hybrid Co-Al mixed metal oxides/carbon nanotubes nanocomposite showed the enhanced catalytic activity in the thermal decomposition of ammonium perchlorate, as compared to carbon nanotubes and pure Co-Al mixed metal oxides. Highlights: Black-Right-Pointing-Pointer Co-Al mixed metal oxides/carbon nanotubes nanocomposite was synthesized. Black-Right-Pointing-Pointer Co-Al mixed metal oxides consisted of cobalt oxide and Co-containing spinels. Black-Right-Pointing-Pointer Nanocomposite exhibited excellent catalytic activity for the decomposition of AP. Black-Right-Pointing-Pointer The superior catalytic property is related to novel heterostructure and composition.

  2. Making A Noble-Metal-On-Metal-Oxide Catalyst

    NASA Technical Reports Server (NTRS)

    Miller, Irvin M.; Davis, Patricia P.; Upchurch, Billy T.

    1989-01-01

    Catalyst exhibits superior performance in oxidation of CO in CO2 lasers. Two-step process developed for preparing platinum- or palladium-on-tin-oxide catalyst for recombination of CO and O2, decomposition products that occur in high-voltage discharge region of closed-cycle CO2 laser. Process also applicable to other noble-metal/metal-oxide combinations.

  3. Topological and unconventional magnetic states in transition metal oxides

    NASA Astrophysics Data System (ADS)

    Fiete, Gregory

    In this talk I describe some recent work on unusual correlated phases that may be found in bulk transition metal oxides with strong spin-orbit coupling. I will focus on model Hamiltonian studies that are motivated by the pyrocholore iridates, though the correlated topological phases described may appear in a much broader class of materials. I will describe a variety of fractionalized topological phases protected by time-reversal and crystalline symmetries: The weak topological Mott insulator (WTMI), the TI* phase, and the topological crystalline Mott insulator (TCMI). If time permits, I will also discuss closely related heterostructures of pyrochlore iridates in a bilayer and trilayer film geometry. These quasi-two dimensional systems may exhibit a number of interesting topological and magnetic phases. This work is generously funded by the ARO, DARPA, and the NSF.

  4. Ferromagnetism in Metal Oxide Nanowires

    NASA Astrophysics Data System (ADS)

    Maloney, Francis Scott

    Maloney, Francis S., Ferromagnetism in Metal Oxide Nanowires, Ph.D, Department of. Physics and Astronomy, Dec. 2016. Metal-oxide nanowires (NWs) are versatile, 1-dimensional semiconducting structures. with unique properties and great potential for device applications. One particularly. interesting feature of these structures is that they often show ferromagnetic behavior. where their bulk counterparts do not. Their ferromagnetism may offer a new medium for. sub-micron scale spintronic devices. In this work, two different metal oxide NW systems. are studied; Mn-doped ZnO and Sn-doped In2O3 (ITO). Mn-ZnO and ITO NWs were. fabricated by a vapor-liquid-solid transport (VLS) mechanism within a chemical-vapor. deposition (CVD) process. The optical and magnetic properties of Mn-doped ZnO NWs were examined before. and after semiconducting CdSe quantum dots (QDs) were deposited on the NW surface. Both undoped and Mn-doped QDs were examined. Bare Mn-doped ZnO NWs were. found to be ferromagnetic at room temperature. Their total saturation magnetization. increased after the deposition of QDs. The origin of the ferromagnetism is believed to be. due to the contributions of both zinc vacancies (VZn’s) and exchange coupling between. Mn ions. Mn-ZnO NWs were then utilized in quantum dot sensitized solar cells. (QDSSCs), where Mn-doping in both the NW and QD were found to improve the overall. performance of the cell. Ferromagnetism was also observed in ITO NWs. The oxidation state of the Sn ions. was examined using x-ray photoelectron spectroscopy (XPS). It was found that Sn2+ was. the dominant ionic species in samples over 6% (atomic percentage) Sn. Their saturation. magnetization increased with increasing Sn concentration, which could be associated. with the spin-splitting of a defect band that was encouraged by the imbalance of Sn2+ to. Sn4+ species at high Sn concentrations.

  5. Metal and metal oxide nanoparticle synthesis from metal organic frameworks (MOFs): finding the border of metal and metal oxides

    NASA Astrophysics Data System (ADS)

    Das, Raja; Pachfule, Pradip; Banerjee, Rahul; Poddar, Pankaj

    2012-01-01

    Herein, for the first time, we report a generalized strategy for the successful synthesis of highly crystalline metal and metal oxide nanoparticles embedded in a carbon matrix by the controlled thermolysis of metal organic frameworks (MOFs). The rationalized synthesis strategy of a broad range of metal and metal oxides nanoparticles, such as Cu/CuO, Co/Co3O4, ZnO, Mn2O3, MgO and CdS/CdO, by thermolysis of MOFs demonstrates for the first time that metal ions with a reduction potential of -0.27 volts or higher present in MOFs always form pure metal nanoparticles during thermolysis in N2, whereas metal ions with a reduction potential lower than -0.27 volts form metal oxide nanoparticles during thermolysis in N2. Another point of interest is the fact that we have found a unique relationship between the nanoparticle size and the distance between the secondary building units inside the MOF precursors. Interestingly, the crystallinity of the carbon matrix was also found to be greatly influenced by the environment (N2 and air) during thermolysis. Moreover, these nanoparticles dispersed in a carbon matrix showed promising H2 and CO2 adsorption properties depending on the environment used for the thermolysis of MOFs.Herein, for the first time, we report a generalized strategy for the successful synthesis of highly crystalline metal and metal oxide nanoparticles embedded in a carbon matrix by the controlled thermolysis of metal organic frameworks (MOFs). The rationalized synthesis strategy of a broad range of metal and metal oxides nanoparticles, such as Cu/CuO, Co/Co3O4, ZnO, Mn2O3, MgO and CdS/CdO, by thermolysis of MOFs demonstrates for the first time that metal ions with a reduction potential of -0.27 volts or higher present in MOFs always form pure metal nanoparticles during thermolysis in N2, whereas metal ions with a reduction potential lower than -0.27 volts form metal oxide nanoparticles during thermolysis in N2. Another point of interest is the fact that we have

  6. Preparing oxidizer coated metal fuel particles

    NASA Technical Reports Server (NTRS)

    Shafer, J. I.; Simmons, G. M. (Inventor)

    1974-01-01

    A solid propellant composition of improved efficiency is described which includes an oxidizer containing ammonium perchlorate, and a powered metal fuel, preferably aluminum or beryllium, in the form of a composite. The metal fuel is contained in the crystalline lattice framework of the oxidizer, as well as within the oxidizer particles, and is disposed in the interstices between the oxidizer particles of the composition. The propellant composition is produced by a process comprising the crystallization of ammonium perchlorate in water, in the presence of finely divided aluminum or beryllium. A suitable binder is incorporated in the propellant composition to bind the individual particles of metal with the particles of oxidizer containing occluded metal.

  7. Ammonia release method for depositing metal oxides

    DOEpatents

    Silver, G.L.; Martin, F.S.

    1994-12-13

    A method is described for depositing metal oxides on substrates which is indifferent to the electrochemical properties of the substrates and which comprises forming ammine complexes containing metal ions and thereafter effecting removal of ammonia from the ammine complexes so as to permit slow precipitation and deposition of metal oxide on the substrates. 1 figure.

  8. Ammonia release method for depositing metal oxides

    DOEpatents

    Silver, Gary L.; Martin, Frank S.

    1994-12-13

    A method of depositing metal oxides on substrates which is indifferent to the electrochemical properties of the substrates and which comprises forming ammine complexes containing metal ions and thereafter effecting removal of ammonia from the ammine complexes so as to permit slow precipitation and deposition of metal oxide on the substrates.

  9. Method for producing metal oxide nanoparticles

    DOEpatents

    Phillips, Jonathan; Mendoza, Daniel; Chen, Chun-Ku

    2008-04-15

    Method for producing metal oxide nanoparticles. The method includes generating an aerosol of solid metallic microparticles, generating plasma with a plasma hot zone at a temperature sufficiently high to vaporize the microparticles into metal vapor, and directing the aerosol into the hot zone of the plasma. The microparticles vaporize in the hot zone into metal vapor. The metal vapor is directed away from the hot zone and into the cooler plasma afterglow where it oxidizes, cools and condenses to form solid metal oxide nanoparticles.

  10. Reduced Graphene Oxide-Ag3PO4 Heterostructure: A Direct Z-Scheme Photocatalyst for Augmented Photoreactivity and Stability.

    PubMed

    Samal, Alaka; Das, D P; Nanda, K K; Mishra, B K; Das, J; Dash, A

    2016-02-18

    A visible light driven, direct Z-scheme reduced graphene oxide-Ag3PO4 (RGO-Ag3 PO4 ) heterostructure was synthesized by means of a simple one-pot photoreduction route by varying the amount of RGO under visible light illumination. The reduction of graphene oxide (GO) and growth of Ag3PO4 took place simultaneously. The effect of the amount of RGO on the textural properties and photocatalytic activity of the heterostructure was investigated under visible light illumination. Furthermore, total organic carbon (TOC) analysis confirmed 97.1 % mineralization of organic dyes over RGO-Ag3PO4 in just five minutes under visible-light illumination. The use of different quenchers in the photomineralization suggested the presence of hydroxyl radicals ((.)OH), superoxide radicals ((.)O2 (-)), and holes (h(+)), which play a significant role in the mineralization of organic dyes. In addition to that, clean hydrogen fuel generation was also observed with excellent reusability. The 4 RGO-Ag3PO4 heterostructure has a high H2 evolution rate of 3690 μmol h(-1)  g(-1), which is 6.15 times higher than that of RGO. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Materials optimization and ghz spin dynamics of metallic ferromagnetic thin film heterostructures

    NASA Astrophysics Data System (ADS)

    Cheng, Cheng

    Metallic ferromagnetic (FM) thin film heterostructures play an important role in emerging magnetoelectronic devices, which introduce the spin degree of freedom of electrons into conventional charge-based electronic devices. As the majority of magnetoelectronic devices operate in the GHz frequency range, it is critical to understand the high-frequency magnetization dynamics in these structures. In this thesis, we start with the static magnetic properties of FM thin films and their optimization via the field-sputtering process incorporating a specially designed in-situ electromagnet. We focus on the origins of anisotropy and hysteresis/coercivity in soft magnetic thin films, which are most relevant to magentic susceptibility and power dissipation in applications in the sub-GHz frequency regime, such as magnetic-core integrated inductors. Next we explore GHz magnetization dynamics in thin-film heterostructures, both in semi-infinite samples and confined geometries. All investigations are rooted in the Landau-Lifshitz-Gilbert (LLG) equation, the equation of motion for magnetization. The phenomenological Gilbert damping parameter in the LLG equation has been interpreted, since the 1970's, in terms of the electrical resistivity. We present the first interpretation of the size effect in Gilbert damping in single metallic FM films based on this electron theory of damping. The LLG equation is intrinsically nonlinear, which provides possibilities for rf signal processing. We analyze the frequency doubling effect at small-angle magnetization precession from the first-order expansion of the LLG equation, and demonstrate second harmonic generation from Ni81 Fe19 (Permalloy) thin film under ferromagnetic resonance (FMR), three orders of magnitude more efficient than in ferrites traditionally used in rf devices. Though the efficiency is less than in semiconductor devices, we provide field- and frequency-selectivity in the second harmonic generation. To address further the

  12. Nanostructured transition metal oxides useful for water oxidation catalysis

    DOEpatents

    Frei, Heinz M; Jiao, Feng

    2013-12-24

    The present invention provides for a composition comprising a nanostructured transition metal oxide capable of oxidizing two H.sub.2O molecules to obtain four protons. In some embodiments of the invention, the composition further comprises a porous matrix wherein the nanocluster of the transition metal oxide is embedded on and/or in the porous matrix.

  13. Spin Injection and Suppressed Andreev Reflection in Ferromagnet-Superconductor Oxide Heterostructures

    NASA Astrophysics Data System (ADS)

    Goldman, A. M.; Kraus, P. A.; Nikolaev, K.; Vas'ko, V. A.; Bhattacharya, A.; Cooley, W.

    2000-03-01

    Heterostructure bilayers of the superconductor, dysprosium barium copper oxide (DBCO), and the ferromagnet, lanthanum barium manganite (LBMO), were grown as single crystal thin films by employing the block-by-block deposition technique. Reflection high-energy electron diffraction was used to monitor film quality during growth. These bilayers were patterned as mesa structures for vertical transport measurements using low-energy, low-density Ar ion milling with the sample held at 77K. Electrical leads were arranged so as to permit study of the effect of the injection of spin-polarized carriers on Andreev reflection at the superconductor-ferromagnet interface and the determination of the effect of injection on the critical current of the superconductor. Because the DBCO film was the underlayer, an extended oxygen anneal was need to achieve superconductivity in finished devices. The results of conductance measurements are consistent with recent theories of spin-polarized transport between ferromagnetic and superconducting layers, and reveal a temperature dependence of the spin polarization in LBMO. Clear features of the suppression of Andreev reflection by spin polarization were visible at low temperatures. Critical current suppression data showed that a nonequilibrium population of spins developed in the superconducting film as a result of the current injected from the ferromagnet.

  14. Insight into spin transport in oxide heterostructures from interface-resolved magnetic mapping

    DOE PAGES

    Bruno, F. Y.; Grisolia, M. N.; Visani, C.; ...

    2015-02-17

    At interfaces between complex oxides, electronic, orbital and magnetic reconstructions may produce states of matter absent from the materials involved, offering novel possibilities for electronic and spintronic devices. Here we show that magnetic reconstruction has a strong influence on the interfacial spin selectivity, a key parameter controlling spin transport in magnetic tunnel junctions. In epitaxial heterostructures combining layers of antiferromagnetic LaFeO3 (LFO) and ferromagnetic La0.7Sr0.3MnO3 (LSMO), we find that a net magnetic moment is induced in the first few unit planes of LFO near the interface with LSMO. Using X-ray photoemission electron microscopy, we show that the ferromagnetic domain structuremore » of the manganite electrodes is imprinted into the antiferromagnetic tunnel barrier, endowing it with spin selectivity. Finally, we find that the spin arrangement resulting from coexisting ferromagnetic and antiferromagnetic interactions strongly influences the tunnel magnetoresistance of LSMO/LFO/LSMO junctions through competing spin-polarization and spin-filtering effects.« less

  15. Insight into spin transport in oxide heterostructures from interface-resolved magnetic mapping

    SciTech Connect

    Bruno, F. Y.; Varela, M.; Abrudan, R.; Pennycook, S. J.; Sefrioui, Z.

    2015-02-17

    At interfaces between complex oxides, electronic, orbital and magnetic reconstructions may produce states of matter absent from the materials involved, offering novel possibilities for electronic and spintronic devices. Here we show that magnetic reconstruction has a strong influence on the interfacial spin selectivity, a key parameter controlling spin transport in magnetic tunnel junctions. In epitaxial heterostructures combining layers of antiferromagnetic LaFeO3 (LFO) and ferromagnetic La0.7Sr0.3MnO3 (LSMO), we find that a net magnetic moment is induced in the first few unit planes of LFO near the interface with LSMO. Using X-ray photoemission electron microscopy, we show that the ferromagnetic domain structure of the manganite electrodes is imprinted into the antiferromagnetic tunnel barrier, endowing it with spin selectivity. Finally, we find that the spin arrangement resulting from coexisting ferromagnetic and antiferromagnetic interactions strongly influences the tunnel magnetoresistance of LSMO/LFO/LSMO junctions through competing spin-polarization and spin-filtering effects.

  16. Metal oxide-based transparent conducting oxides

    NASA Astrophysics Data System (ADS)

    Gillispie, Meagen Anne

    Transparent conducting oxides (TCOs) are important materials widely used for transparent contacts in flat panel displays, light emitting diodes, and solar cells. While Sn-doped In2O3 (ITO) continues to be the TCO of choice, the increasing cost of raw In has resulted in an increasing interest in developing In-free alternatives to ITO. In this work, two metal oxide systems were investigated for their viability as In-free TCO materials. First, Nb- or Ta-doped anatase TiO2 was selected due to the recent reports of high conductivity in pulse laser deposited (PLD) films. Thin films doped with either 15 mol% Nb or 20 mol% Ta were deposited on glass and SrTiO3 (STO) substrates using RF magnetron sputtering techniques. In all cases, maximum conductivity was achieved when the films crystallized in the anatase structure of TiO2. Films sputtered on STO possessed similar electrical and optical properties as PLD films on STO, yet at a much lower deposition temperature while films deposited on glass had much lower conductivity, due to dramatically reduced mobility. Two-dimensional x-ray diffraction analysis showed that doped TiO2 films sputter deposited on STO were biaxially textured along the (004) direction. This texturing was not observed in films deposited on glass, which were composed of randomly-oriented crystalline anatase. Biaxial texturing in the film helps to reduce grain boundary resistance, thereby increasing carrier mobility and further enhancing conductivity. The Cu-based delafossite system (CuBO2, B is a 3+ metal cation) was selected as the second TCO material system due to its natural p-type conductivity, a rarity among existing TCOs. Study of this system was two-pronged: (1) application of codoping techniques to achieve bipolar conductivity; and (2) investigate stability of mixed B cation delafossites. CuAlO2 and CuGaO2 were both codoped with varying ratios of donors and acceptors in an attempt to achieve bipolar conductivity. Very little change in the electrical

  17. Metal and metal oxide nanoparticle synthesis from metal organic frameworks (MOFs): finding the border of metal and metal oxides.

    PubMed

    Das, Raja; Pachfule, Pradip; Banerjee, Rahul; Poddar, Pankaj

    2012-01-21

    Herein, for the first time, we report a generalized strategy for the successful synthesis of highly crystalline metal and metal oxide nanoparticles embedded in a carbon matrix by the controlled thermolysis of metal organic frameworks (MOFs). The rationalized synthesis strategy of a broad range of metal and metal oxides nanoparticles, such as Cu/CuO, Co/Co(3)O(4), ZnO, Mn(2)O(3), MgO and CdS/CdO, by thermolysis of MOFs demonstrates for the first time that metal ions with a reduction potential of -0.27 volts or higher present in MOFs always form pure metal nanoparticles during thermolysis in N(2), whereas metal ions with a reduction potential lower than -0.27 volts form metal oxide nanoparticles during thermolysis in N(2). Another point of interest is the fact that we have found a unique relationship between the nanoparticle size and the distance between the secondary building units inside the MOF precursors. Interestingly, the crystallinity of the carbon matrix was also found to be greatly influenced by the environment (N(2) and air) during thermolysis. Moreover, these nanoparticles dispersed in a carbon matrix showed promising H(2) and CO(2) adsorption properties depending on the environment used for the thermolysis of MOFs.

  18. Reduced TiO2-Graphene Oxide Heterostructure As Broad Spectrum-Driven Efficient Water-Splitting Photocatalysts.

    PubMed

    Li, Lihua; Yu, Lili; Lin, Zhaoyong; Yang, Guowei

    2016-04-06

    The reduced TiO2-graphene oxide heterostructure as an alternative broad spectrum-driven efficient water splitting photocatalyst has become a really interesting topic, however, its syntheses has many flaws, e.g., tedious experimental steps, time-consuming, small scale production, and requirement of various additives, for example, hydrazine hydrate is widely used as reductant to the reduction of graphene oxide, which is high toxicity and easy to cause the second pollution. For these issues, herein, we reported the synthesis of the reduced TiO2-graphene oxide heterostructure by a facile chemical reduction agent-free one-step laser ablation in liquid (LAL) method, which achieves extended optical response range from ultraviolet to visible and composites TiO(2-x) (reduced TiO2) nanoparticle and graphene oxide for promoting charge conducting. 30.64% Ti(3+) content in the reduced TiO2 nanoparticles induces the electronic reconstruction of TiO2, which results in 0.87 eV decrease of the band gap for the visible light absorption. TiO(2-x)-graphene oxide heterostructure achieved drastically increased photocatalytic H2 production rate, up to 23 times with respect to the blank experiment. Furthermore, a maximum H2 production rate was measured to be 16 mmol/h/g using Pt as a cocatalyst under the simulated sunlight irradiation (AM 1.5G, 135 mW/cm(2)), the quantum efficiencies were measured to be 5.15% for wavelength λ = 365 ± 10 nm and 1.84% for λ = 405 ± 10 nm, and overall solar energy conversion efficiency was measured to be 14.3%. These findings provided new insights into the broad applicability of this methodology for accessing fascinate photocatalysts.

  19. Output power enhancement in AlGaN/GaN heterostructure field-effect transistors with multilevel metallization

    NASA Astrophysics Data System (ADS)

    Oh, Seung Kyu; Jang, Taehoon; Pouladi, Sara; Jo, Young Je; Ko, Hwa-Young; Ryou, Jae-Hyun; Kwak, Joon Seop

    2017-01-01

    To improve wafer utilization efficiency and heat dissipation performance, this paper proposes multilevel metallization-structured, lateral-type AlGaN/GaN heterostructure field-effect transistors (HFETs) on a 150 mm Si substrate using photosensitive polyimide (PSPI) as the intermetal dielectric layer. The maximum drain current of the HFETs is 46.3 A, which is 240% higher than that of conventional AlGaN/GaN HFETs with the same die size. Furthermore, the drain current drop of the HFETs under high-bias operation is reduced from 14.07 to 8.09%, as compared to that of conventional HFETs.

  20. Graphene/MoS2 heterostructures as templates for growing two-dimensional metals: Predictions from ab initio calculations

    NASA Astrophysics Data System (ADS)

    Šljivančanin, Željko; Belić, Milivoj

    2017-09-01

    Preparation of single-atom-thick layers of ordinary metals has been a challenging task since their closely packed atoms lack layered structure with highly anisotropic bonding. Using computational modeling based on density functional theory we showed that graphene/MoS2 heterostructures can be used as suitable templates to grow stable two-dimensional (2D) clusters, as well as extended monoatomic layers of metals with nonlayered structure in the bulk. Considering gold and lithium as two metals with markedly different properties, we found that Li intercalants strengthen coupling between graphene (G) and MoS2, mainly due to electrostatic attraction of 2D materials with positively charged Li atoms. However, intercalation with large Au atoms gives rise to a significant increase in the distance between G and MoS2 and thus, weakens their interaction. In addition to strong preference for 2D growth, we demonstrated that Au intercalants weakly interact with both G and MoS2, and hence G /MoS2 vertical heterostructures could be a promising framework to prepare gold 2D structures with electronic properties closely resembling those of the hypothetical free-standing hexagonal gold monolayer.

  1. Electronic properties and morphology of copper oxide/n-type silicon heterostructures

    NASA Astrophysics Data System (ADS)

    Lindberg, P. F.; Gorantla, S. M.; Gunnæs, A. E.; Svensson, B. G.; Monakhov, E. V.

    2017-08-01

    Silicon-based tandem heterojunction solar cells utilizing cuprous oxide (Cu2O) as the top absorber layer show promise for high-efficiency conversion and low production cost. In the present study, single phase Cu2O films have been realized on n-type Si substrates by reactive magnetron sputtering at 400 °C. The obtained Cu2O/Si heterostructures have subsequently been heat treated at temperatures in the 400-700 °C range in Ar flow and extensively characterized by x-ray diffraction (XRD) measurements, transmission electron microscopy (TEM) imaging and electrical techniques. The Cu2O/Si heterojunction exhibits a current rectification of ~5 orders of magnitude between forward and reverse bias voltages. High resolution cross-sectional TEM-images show the presence of a ~2 nm thick interfacial SiO2 layer between Cu2O and the Si substrate. Heat treatments below 550 °C result in gradual improvement of crystallinity, indicated by XRD. At and above 550 °C, partial phase transition to cupric oxide (CuO) occurs followed by a complete transition at 700 °C. No increase or decrease of the SiO2 layer is observed after the heat treatment at 550 °C. Finally, a thin Cu-silicide layer (Cu3Si) emerges below the SiO2 layer upon annealing at 550 °C. This silicide layer influences the lateral current and voltage distributions, as evidenced by an increasing effective area of the heterojunction diodes.

  2. Metal oxide composite dosimeter method and material

    DOEpatents

    Miller, Steven D.

    1998-01-01

    The present invention is a method of measuring a radiation dose wherein a radiation responsive material consisting essentially of metal oxide is first exposed to ionizing radiation. The metal oxide is then stimulating with light thereby causing the radiation responsive material to photoluminesce. Photons emitted from the metal oxide as a result of photoluminescence may be counted to provide a measure of the ionizing radiation.

  3. Incongruent sputtering in metal oxides

    NASA Astrophysics Data System (ADS)

    Langell, M. A.

    1987-11-01

    Preferential sputtering has been observed for NiO(100) and CoO(100) under low fluxes of 2 keV Ar +, with oxygen/metal sputtering yields a strong function of substrate temperature. Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) were used to follow the chemical and compositional nature of the surface for substrates prepared and characterized under UHV. Using O/M AES ratios as a measure of oxygen content, congruent sputtering was found for the oxides at 300 K for fluences of up to 10 17 Ar +/cm 2 and threshold temperatures for sputter reduction were observed at 350 K and 500 K for NiO and CoO, respectively. The relatively close thresholds for NiO and CoO sputter reduction argue against current thermal sputtering theory which predicts incongruent sputtering through oxygen vaporization. The temperature dependence of the O/M sputtering yields indicates that metal oxide sputtering is far more complex than current theory is able to describe. XPS data show evidence that adsorbed oxygen species, distinct from lattice oxygen, have formed on surfaces which have undergone sputter reduction and these species are postulated to play a role in the sputtering mechanism. MnO(100) crystals show no evidence for preferential sputtering for substrate temperature of up to 1000 K.

  4. Strongly enhanced spin current in topological insulator/ferromagnetic metal heterostructures by spin pumping

    SciTech Connect

    Wu, C. N.; Hung, H. Y.; Lin, H. Y.; Lin, P. H.; Kwo, J. E-mail: raynien@phys.nthu.edu.tw; Lin, Y. H.; Fanchiang, Y. T.; Hong, M. E-mail: raynien@phys.nthu.edu.tw; Lin, J. G.; Lee, S. F.

    2015-05-07

    Spin pumping effect in Bi{sub 2}Se{sub 3}/Fe{sub 3}Si and Fe/Bi{sub 2}Te{sub 3} heterostructures was studied. High quality films of Bi{sub 2}Se{sub 3}(001) on ferromagnetic Fe{sub 3}Si(111) layer and Fe(111) films on Bi{sub 2}Te{sub 3}(001) layer were grown epitaxially by molecular beam epitaxy. Using a microwave cavity source, large voltages due to the Inverse Spin Hall Effect (V{sub ISHE}) were detected in Bi{sub 2}Se{sub 3}(001)/Fe{sub 3}Si(111) bi-layer at room temperature. V{sub ISHE} of up to 63.4 ± 4.0 μV at 100 mW microwave power (P{sub MW}) was observed. In addition, Fe(111)/Bi{sub 2}Te{sub 3}(001) bi-layer also showed a large V{sub ISHE} of 3.0 ± 0.1 μV at P{sub MW} of 25 mW. V{sub ISHE} of both structures showed microwave linear power dependence in accordance with the theoretical model of spin pumping. The spin Hall angle was calculated to be 0.0053 ± 0.002 in Bi{sub 2}Se{sub 3} and was estimated to be 0.0068 ± 0.003 in Bi{sub 2}Te{sub 3}. The charge current density (J{sub c}) of Bi{sub 2}Se{sub 3}/Fe{sub 3}Si and Fe/Bi{sub 2}Te{sub 3} structures are comparable and are about 2–5 times higher than the Fe{sub 3}Si/normal metal and Fe{sub 3}Si/GaAs results. The significant enhancement of spin current in topological insulator/ferromagnetic metal (TI/FM) and FM/TI bilayers is attributed to strong spin-orbit coupling inherent of TIs and demonstrates the high potential of exploiting TI-based structures for spintronic applications.

  5. The oxidation of metals and alloys

    NASA Technical Reports Server (NTRS)

    Scheil, Erich

    1952-01-01

    This paper reviews the various types of oxidation processes occurring with pure metals and gives explanations for the varying time-temperature-oxidation rate relations that exist for copper, tungsten, zinc, cadmium, and tantalum. The effect of shape and crystal structure on oxidation is discussed. Principles derived are applied to the oxidation of alloys.

  6. Reduction of Metal Oxide to Metal using Ionic Liquids

    SciTech Connect

    Dr. Ramana Reddy

    2012-04-12

    A novel pathway for the high efficiency production of metal from metal oxide means of electrolysis in ionic liquids at low temperature was investigated. The main emphasis was to eliminate the use of carbon and high temperature application in the reduction of metal oxides to metals. The emphasis of this research was to produce metals such as Zn, and Pb that are normally produced by the application of very high temperatures. The reduction of zinc oxide to zinc and lead oxide to lead were investigated. This study involved three steps in accomplishing the final goal of reduction of metal oxide to metal using ionic liquids: 1) Dissolution of metal oxide in an ionic liquid, 2) Determination of reduction potential using cyclic voltammetry (CV) and 3) Reduction of the dissolved metal oxide. Ionic liquids provide additional advantage by offering a wide potential range for the deposition. In each and every step of the process, more than one process variable has been examined. Experimental results for electrochemical extraction of Zn from ZnO and Pb from PbO using eutectic mixtures of Urea ((NH2)2CO) and Choline chloride (HOC2H4N(CH3)3+Cl-) or (ChCl) in a molar ratio 2:1, varying voltage and temperatures were carried out. Fourier Transform Infra-Red (FTIR) spectroscopy studies of ionic liquids with and without metal oxide additions were conducted. FTIR and induction coupled plasma spectroscopy (ICPS) was used in the characterization of the metal oxide dissolved ionic liquid. Electrochemical experiments were conducted using EG&G potentiostat/galvanostat with three electrode cell systems. Cyclic voltammetry was used in the determination of reduction potentials for the deposition of metals. Chronoamperometric experiments were carried out in the potential range of -0.6V to -1.9V for lead and -1.4V to -1.9V for zinc. The deposits were characterized using XRD and SEM-EDS for phase, morphological and elemental analysis. The results showed that pure metal was deposited on the cathode

  7. Metal oxides for optoelectronic applications.

    PubMed

    Yu, Xinge; Marks, Tobin J; Facchetti, Antonio

    2016-04-01

    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

  8. Metal oxides for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Yu, Xinge; Marks, Tobin J.; Facchetti, Antonio

    2016-04-01

    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

  9. Strong interlayer coupling mediated giant two-photon absorption in MoS e2 /graphene oxide heterostructure: Quenching of exciton bands

    NASA Astrophysics Data System (ADS)

    Sharma, Rituraj; Aneesh, J.; Yadav, Rajesh Kumar; Sanda, Suresh; Barik, A. R.; Mishra, Ashish Kumar; Maji, Tuhin Kumar; Karmakar, Debjani; Adarsh, K. V.

    2016-04-01

    A complex few-layer MoS e2 /graphene oxide (GO) heterostructure with strong interlayer coupling was prepared by a facile hydrothermal method. In this strongly coupled heterostructure, we demonstrate a giant enhancement of two-photon absorption that is in stark contrast to the reverse saturable absorption of a weakly coupled MoS e2 /GO heterostructure and saturable absorption of isolated MoS e2 . Spectroscopic evidence of our study indicates that the optical signatures of isolated MoS e2 and GO domains are significantly modified in the heterostructure, displaying a direct coupling of both domains. Furthermore, our first-principles calculations indicate that strong interlayer coupling between the layers dramatically suppresses the MoS e2 excitonic bands. We envision that our findings provide a powerful tool to explore different optical functionalities as a function of interlayer coupling, which may be essential for the development of device technologies.

  10. Cu2ZnSnS4/MoS2-Reduced Graphene Oxide Heterostructure: Nanoscale Interfacial Contact and Enhanced Photocatalytic Hydrogen Generation.

    PubMed

    Ha, Enna; Liu, Wei; Wang, Luyang; Man, Ho-Wing; Hu, Liangsheng; Tsang, Shik Chi Edman; Chan, Chris Tsz-Leung; Kwok, Wai-Ming; Lee, Lawrence Yoon Suk; Wong, Kwok-Yin

    2017-01-03

    Hydrogen generation from water using noble metal-free photocatalysts presents a promising platform for renewable and sustainable energy. Copper-based chalcogenides of earth-abundant elements, especially Cu2ZnSnS4 (CZTS), have recently arisen as a low-cost and environment-friendly material for photovoltaics and photocatalysis. Herein, we report a new heterostructure consisting of CZTS nanoparticles anchored onto a MoS2-reduced graphene oxide (rGO) hybrid. Using a facile two-step method, CZTS nanoparticles were in situ grown on the surface of MoS2-rGO hybrid, which generated high density of nanoscale interfacial contact between CZTS and MoS2-rGO hybrid. The photoexcited electrons of CZTS can be readily transported to MoS2 through rGO backbone, reducing the electron-hole pair recombination. In photocatalytic hydrogen generation under visible light irradiation, the presence of MoS2-rGO hybrids enhanced the hydrogen production rate of CZTS by 320%, which can be attributed to the synergetic effect of increased charge separation by rGO and more catalytically active sites from MoS2. Furthermore, this CZTS/MoS2-rGO heterostructure showed much higher photocatalytic activity than both Au and Pt nanoparticle-decorated CZTS (Au/CZTS and Pt/CZTS) photocatalysts, indicating the MoS2-rGO hybrid is a better co-catalyst for photocatalytic hydrogen generation than the precious metal. The CZTS/MoS2-rGO system also demonstrated stable photocatalytic activity for a continuous 20 h reaction.

  11. Cu2ZnSnS4/MoS2-Reduced Graphene Oxide Heterostructure: Nanoscale Interfacial Contact and Enhanced Photocatalytic Hydrogen Generation

    PubMed Central

    Ha, Enna; Liu, Wei; Wang, Luyang; Man, Ho-Wing; Hu, Liangsheng; Tsang, Shik Chi Edman; Chan, Chris Tsz-Leung; Kwok, Wai-Ming; Lee, Lawrence Yoon Suk; Wong, Kwok-Yin

    2017-01-01

    Hydrogen generation from water using noble metal-free photocatalysts presents a promising platform for renewable and sustainable energy. Copper-based chalcogenides of earth-abundant elements, especially Cu2ZnSnS4 (CZTS), have recently arisen as a low-cost and environment-friendly material for photovoltaics and photocatalysis. Herein, we report a new heterostructure consisting of CZTS nanoparticles anchored onto a MoS2-reduced graphene oxide (rGO) hybrid. Using a facile two-step method, CZTS nanoparticles were in situ grown on the surface of MoS2-rGO hybrid, which generated high density of nanoscale interfacial contact between CZTS and MoS2-rGO hybrid. The photoexcited electrons of CZTS can be readily transported to MoS2 through rGO backbone, reducing the electron-hole pair recombination. In photocatalytic hydrogen generation under visible light irradiation, the presence of MoS2-rGO hybrids enhanced the hydrogen production rate of CZTS by 320%, which can be attributed to the synergetic effect of increased charge separation by rGO and more catalytically active sites from MoS2. Furthermore, this CZTS/MoS2-rGO heterostructure showed much higher photocatalytic activity than both Au and Pt nanoparticle-decorated CZTS (Au/CZTS and Pt/CZTS) photocatalysts, indicating the MoS2-rGO hybrid is a better co-catalyst for photocatalytic hydrogen generation than the precious metal. The CZTS/MoS2-rGO system also demonstrated stable photocatalytic activity for a continuous 20 h reaction. PMID:28045066

  12. Cu2ZnSnS4/MoS2-Reduced Graphene Oxide Heterostructure: Nanoscale Interfacial Contact and Enhanced Photocatalytic Hydrogen Generation

    NASA Astrophysics Data System (ADS)

    Ha, Enna; Liu, Wei; Wang, Luyang; Man, Ho-Wing; Hu, Liangsheng; Tsang, Shik Chi Edman; Chan, Chris Tsz-Leung; Kwok, Wai-Ming; Lee, Lawrence Yoon Suk; Wong, Kwok-Yin

    2017-01-01

    Hydrogen generation from water using noble metal-free photocatalysts presents a promising platform for renewable and sustainable energy. Copper-based chalcogenides of earth-abundant elements, especially Cu2ZnSnS4 (CZTS), have recently arisen as a low-cost and environment-friendly material for photovoltaics and photocatalysis. Herein, we report a new heterostructure consisting of CZTS nanoparticles anchored onto a MoS2-reduced graphene oxide (rGO) hybrid. Using a facile two-step method, CZTS nanoparticles were in situ grown on the surface of MoS2-rGO hybrid, which generated high density of nanoscale interfacial contact between CZTS and MoS2-rGO hybrid. The photoexcited electrons of CZTS can be readily transported to MoS2 through rGO backbone, reducing the electron-hole pair recombination. In photocatalytic hydrogen generation under visible light irradiation, the presence of MoS2-rGO hybrids enhanced the hydrogen production rate of CZTS by 320%, which can be attributed to the synergetic effect of increased charge separation by rGO and more catalytically active sites from MoS2. Furthermore, this CZTS/MoS2-rGO heterostructure showed much higher photocatalytic activity than both Au and Pt nanoparticle-decorated CZTS (Au/CZTS and Pt/CZTS) photocatalysts, indicating the MoS2-rGO hybrid is a better co-catalyst for photocatalytic hydrogen generation than the precious metal. The CZTS/MoS2-rGO system also demonstrated stable photocatalytic activity for a continuous 20 h reaction.

  13. High temperature, oxidation resistant noble metal-Al alloy thermocouple

    NASA Technical Reports Server (NTRS)

    Smialek, James L. (Inventor); Gedwill, Michael G. (Inventor)

    1994-01-01

    A thermocouple is disclosed. The thermocouple is comprised of an electropositive leg formed of a noble metal-Al alloy and an electronegative leg electrically joined to form a thermocouple junction. The thermocouple provides for accurate and reproducible measurement of high temperatures (600 - 1300 C) in inert, oxidizing or reducing environments, gases, or vacuum. Furthermore, the thermocouple circumvents the need for expensive, strategic precious metals such as rhodium as a constituent component. Selective oxidation of rhodium is also thereby precluded.

  14. Effect of interface characteristics on electrical properties of metal-gallium nitride heterostructures

    NASA Astrophysics Data System (ADS)

    Kim, Ho Gyoung

    The electrical properties of metal-GaN heterostructures due to the defects and nanoscale surface inhomogeneities have been characterized to explore the nature of electron transport and the feasibility of device fabrication. The effect of nanoscale Pt islands on the contact resistivity and Schottky barrier height in Al/p-GaN contacts was investigated. It was shown that the Al contact with nanoscale Pt islands produced good ohmic characteristics and high reflectance. Current-voltage-temperature (I-V-T) measurements in combination with modeling showed that the electric field enhancement and the increase of the possibility of tunneling due to the nanoscale Pt islands result in an improved ohmic contact. Electrical transport in nanopatterned contacts to n-GaN using porous anodic alumina (PAA) films as masks was investigated. Non-linear I-V characteristics for the as-grown samples became linear for the reactive ion etched (RIE) and PAA patterned samples. Significant reduction of the specific contact resistivity and the effective barrier height and an increase in the reverse current were observed in the PAA patterned sample. The reduction of the depletion width at sharp corners enhanced the local tunneling current, reducing the specific contact resistivity and decreasing the effective barrier height. The electrical properties of surface treatments such as KOH treatment and laser etching in unintentionally doped GaN were investigated. KOH treatment produced an increase in the Schottky barrier height and a decrease in the reverse leakage current. By fitting I-V data in the reverse bias region based on the thermionic field emission (TFE) model, it was shown that the experimental results are consistent with the presence of high densities of surface states, which were reduced appreciably by the KOH treatment. Laser etching yielded an increase of interface trap density and degraded the rectifying I-V characteristics. Post-treatment for the laser etched samples with thermal

  15. “Conductive” yttria-stabilized zirconia as an epitaxial template for oxide heterostructures

    SciTech Connect

    Caspers, C.; Müller, M.; Gloskovskii, A.; Drube, W.; Schneider, C. M.

    2014-05-07

    We report an in situ thermochemical treatment that significantly increases the macroscopic electrical conductivity of insulating yttria-stabilized zirconia (YSZ) (001) single-crystalline substrates. We demonstrate the high-quality surface crystalline structure of the resulting “conductive” cYSZ (001) by low- and high-energy electron diffraction. Soft- and hard X-ray photoemission spectroscopy measurements reveal a sizable reduction of Zr cations to a metallic state and their homogeneous distribution within the cYSZ. We discuss the correlation between the microscopic chemical processes leading to the increased macroscopic metallicity. Finally, the heteroepitaxial growth of a functional magnetic oxide model system, ultrathin EuO on cYSZ (001), was demonstrated. cYSZ (001) thereby enables both high quality oxide heteroepitaxy and the advanced sample characterization by high electron-fluence characterization techniques.

  16. Nanocomposite of graphene and metal oxide materials

    DOEpatents

    Liu, Jun; Aksay, Ilhan A.; Choi, Daiwon; Wang, Donghai; Yang, Zhenguo

    2013-10-15

    Nanocomposite materials comprising a metal oxide bonded to at least one graphene material. The nanocomposite materials exhibit a specific capacity of at least twice that of the metal oxide material without the graphene at a charge/discharge rate greater than about 10 C.

  17. Photodegradation of chlorofluorocarbon alternatives on metal oxide

    SciTech Connect

    Tanaka, K.; Hisanaga, T. )

    1994-05-01

    HCFC and HFC were photodegraded on metal oxides. Degradation rate on several metal oxides was in the order: TiO[sub 2] > ZnO > Fe[sub 2]O[sub 3] > kaolin [ge] SiO[sub 2] [ge] Al[sub 2]O[sub 3]. Principal degradation products were CO[sub 2], Cl[sup [minus

  18. Nanocomposite of graphene and metal oxide materials

    DOEpatents

    Liu, Jun; Aksay, Ilhan A.; Choi, Daiwon; Wang, Donghai; Yang, Zhenguo

    2012-09-04

    Nanocomposite materials comprising a metal oxide bonded to at least one graphene material. The nanocomposite materials exhibit a specific capacity of at least twice that of the metal oxide material without the graphene at a charge/discharge rate greater than about 10C.

  19. Nanocomposite of graphene and metal oxide materials

    DOEpatents

    Liu, Jun; Aksay, Ilhan A.; Choi, Daiwon; Wang, Donghai; Yang, Zhenguo

    2015-06-30

    Nanocomposite materials comprising a metal oxide bonded to at least one graphene material. The nanocomposite materials exhibit a specific capacity of at least twice that of the metal oxide material without the graphene at a charge/discharge rate greater than about 10 C.

  20. Photocurrent measurements in Coupled Quantum Well van der Waals Heterostructures made of 2D Transition Metal Dichalcogenides

    NASA Astrophysics Data System (ADS)

    Joe, Andrew; Jauregui, Luis; High, Alex; Dibos, Alan; Gulpinar, Elgin; Pistunova, Kateryna; Park, Hongkun; Kim, Philip

    , Luis A. Jauregui, Alex A. High, Alan Dibos, Elgin Gulpinar, Kateryna Pistunova, Hongkun Park, Philip Kim Harvard University, Physics Department -abstract- Single layer transition metal dichalcogenides (TMDC) are 2-dimensional (2D) semiconductors van der Waals (vdW) characterized by a direct optical bandgap in the visible wavelength (~2 eV). Characterization of the band alignment between TMDC and the barrier is important for the fabrication of tunneling devices. Here, we fabricate coupled quantum well (CQW) heterostructures made of 2D TMDCs with hexagonal Boron nitride (hBN) as an atomically thin barrier and gate dielectric and with top and bottom metal (or graphite) as gate electrodes. We observe a clear dependence of the photo-generated current with varying hBN thickness, electrode workfunctions, electric field, laser excitation power, excitation wavelength, and temperature. We will discuss the implication of photocurrent in relation to quantum transport process across the vdW interfaces.

  1. Surface protected lithium-metal-oxide electrodes

    DOEpatents

    Thackeray, Michael M.; Kang, Sun-Ho

    2016-04-05

    A lithium-metal-oxide positive electrode having a layered or spinel structure for a non-aqueous lithium electrochemical cell and battery is disclosed comprising electrode particles that are protected at the surface from undesirable effects, such as electrolyte oxidation, oxygen loss or dissolution by one or more lithium-metal-polyanionic compounds, such as a lithium-metal-phosphate or a lithium-metal-silicate material that can act as a solid electrolyte at or above the operating potential of the lithium-metal-oxide electrode. The surface protection significantly enhances the surface stability, rate capability and cycling stability of the lithium-metal-oxide electrodes, particularly when charged to high potentials.

  2. Metallic behavior of GaAs/BaTiO3 heterostructure

    NASA Astrophysics Data System (ADS)

    Yuan, Mengqi; Wang, Jianli; Pu, Long; Tang, Gang; Guo, Sandong

    2016-07-01

    The integration of III-V semiconductors on functional perovskite-oxide can lead to new material properties and new device applications by combining the rich properties of perovskite-oxides together with the superior optical and electronic properties of III-V semiconductors. The structural and electronic properties of the surface and interface of the GaAs/BaTiO3 are studied using first-principles calculations. We point out the energetically favorable GaAs/BaTiO3 interfaces according to the GaAs initial adsorption on the BaTiO3(001) substrate. Our calculations predict the existence of the metallic behavior at the GaAs/BaTiO3 interfaces.

  3. The metal/organic interface in cobalt/vinylidene fluoride heterostructures

    NASA Astrophysics Data System (ADS)

    Foreman, K.; Echeverria, E.; Koten, M. A.; Lindsay, R. M.; Hong, N.; Shield, J.; Adenwalla, S.

    2016-11-01

    Organic-based electronic devices are rapidly increasing in popularity, making it essential to understand and characterize the interface between organic materials and metallic electrodes. This work reports on the characterization of the interface between thin films of an emerging organic ferroelectric, vinylidene fluoride (VDF) oligomer, and Co, an important high Curie temperature ferromagnet. Using a wide battery of experimental techniques, it is shown that VDF oligomer thin films as thin as 15 nm can halt, or prevent, Co oxidization in atmospheric conditions, a necessary condition for device applications. Selectivity of magnetic properties, such as remanent magnetization, is enabled by the clarification of the time scale of Co oxidation, a topic on which there are many conflicting reports. Furthermore, this work shows evidence of chemical bonding at the interface between VDF oligomer and Co, a result with important implications for organic spintronic devices. These results establish the suitability of VDF oligomer for organic-based electronic devices.

  4. Reconstructions at the Interface in Complex Oxide Heterostructures with Strongly Correlated Electrons

    NASA Astrophysics Data System (ADS)

    Gray, Benjamin

    Strongly correlated oxides exhibit a rich spectrum of closely competing orders near the localized-itinerant Mott insulator transition leaving their ground states ripe with instabilities susceptible to small perturbations such as lattice distortions, variation in stoichiometry, magnetic and electric fields, etc. As the field of interfacial engineering has matured, these underlying instabilities in the electronic structure of correlated oxides continue to be leveraged to manipulate existing phases or search for emergent ones. The central theme is matching materials across the interface with disparate physical, chemical, electronic, or magnetic structure to harness interfacial reconstructions in the strongly coupled charge, spin, orbital, and lattice degrees of freedom. In this dissertation, we apply the above paradigm to cuprate-manganite and cuprate-titanate interfaces. We examine ultrathin YBa2Cu3O7/La 2/3Ca1/3MnO3 multilayers, where interfacial charge reconstruction modulates the distribution of charge carriers within the superconducting planes and thereby act as dials to tune through the cuprate doping phase diagram. The ultrathin nature of the cuprate layers allows the reconstructed states to be resolved free of a bulk admixture. The depleted carriers are observed to directly enter the CuO2 planes. With increasing LCMO thickness, magnetic correlations are introduced, and coupling between interfacial Cu and Mn develops. The reconstructions in spin and electronic degrees of freedom found in cuprate-manganite heterostructures are expected to completely mask all other competing interactions. To this end, SrTiO3 is incorporated as a spacer material in cuprate-titanate multilayers to reveal the role of dimensionality, interlayer coupling, and broken translational symmetry. At the unit cell limit, a decrease in carrier concentration is found that directly correlates with underdoping from lost charge reservoir layers at the interface, while increased STO layer thickness

  5. Methods of producing adsorption media including a metal oxide

    DOEpatents

    Mann, Nicholas R; Tranter, Troy J

    2014-03-04

    Methods of producing a metal oxide are disclosed. The method comprises dissolving a metal salt in a reaction solvent to form a metal salt/reaction solvent solution. The metal salt is converted to a metal oxide and a caustic solution is added to the metal oxide/reaction solvent solution to adjust the pH of the metal oxide/reaction solvent solution to less than approximately 7.0. The metal oxide is precipitated and recovered. A method of producing adsorption media including the metal oxide is also disclosed, as is a precursor of an active component including particles of a metal oxide.

  6. Three-electrode metal oxide reduction cell

    DOEpatents

    Dees, Dennis W.; Ackerman, John P.

    2008-08-12

    A method of electrochemically reducing a metal oxide to the metal in an electrochemical cell is disclosed along with the cell. Each of the anode and cathode operate at their respective maximum reaction rates. An electrolyte and an anode at which oxygen can be evolved, and a cathode including a metal oxide to be reduced are included as is a third electrode with independent power supplies connecting the anode and the third electrode and the cathode and the third electrode.

  7. Method for making monolithic metal oxide aerogels

    DOEpatents

    Droege, M.W.; Coronado, P.R.; Hair, L.M.

    1995-03-07

    Transparent, monolithic metal oxide aerogels of varying densities are produced using a method in which a metal alkoxide solution and a catalyst solution are prepared separately and reacted. The resulting hydrolyzed-condensed colloidal solution is gelled, and the wet gel is contained within a sealed, but gas permeable, containment vessel during supercritical extraction of the solvent. The present invention is especially advantageous for making metal oxides other than silica that are prone to forming opaque, cracked aerogels. 6 figs.

  8. Method for making monolithic metal oxide aerogels

    DOEpatents

    Droege, Michael W.; Coronado, Paul R.; Hair, Lucy M.

    1995-01-01

    Transparent, monolithic metal oxide aerogels of varying densities are produced using a method in which a metal alkoxide solution and a catalyst solution are prepared separately and reacted. The resulting hydrolyzed-condensed colloidal solution is gelled, and the wet gel is contained within a sealed, but gas permeable, containment vessel during supercritical extraction of the solvent. The present invention is especially advantageous for making metal oxides other than silica that are prone to forming opaque, cracked aerogels.

  9. Three-Electrode Metal Oxide Reduction Cell

    DOEpatents

    Dees, Dennis W.; Ackerman, John P.

    2005-06-28

    A method of electrochemically reducing a metal oxide to the metal in an electrochemical cell is disclosed along with the cell. Each of the anode and cathode operate at their respective maximum reaction rates. An electrolyte and an anode at which oxygen can be evolved, and a cathode including a metal oxide to be reduced are included as is a third electrode with independent power supplies connecting the anode and the third electrode and the cathode and the third electrode.

  10. Direct electrochemical reduction of metal-oxides

    DOEpatents

    Redey, Laszlo I.; Gourishankar, Karthick

    2003-01-01

    A method of controlling the direct electrolytic reduction of a metal oxide or mixtures of metal oxides to the corresponding metal or metals. A non-consumable anode and a cathode and a salt electrolyte with a first reference electrode near the non-consumable anode and a second reference electrode near the cathode are used. Oxygen gas is produced and removed from the cell. The anode potential is compared to the first reference electrode to prevent anode dissolution and gas evolution other than oxygen, and the cathode potential is compared to the second reference electrode to prevent production of reductant metal from ions in the electrolyte.

  11. Metal Oxide Solubility and Molten Salt Corrosion.

    DTIC Science & Technology

    1982-03-29

    METAL OXIDE SOLUBILITY AND MOLTEN SALT CORROSION.(U) MAR 82 K H STERN UNCLASSI E DL R L-4772NL EL .2. MICROCOPY RESOLUTION TEST CHART NATIONAL BURALU...METAL OXIDE SOLUBILITY AND MOLTEN SALT Interim report on a continuing CORROSION NRL problem. S. PERFORMING a4. REPORT NUMlER 7. AuTtwORr) S. CONTRACT OR...EQUILIBRIA AND OXIDE SOLUTION RELATIONS IN MOLTEN SALTS ............................................. 2 IV. METHODS FOR DETERMINING SOLUBILITIES

  12. Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures

    SciTech Connect

    Nevedomskiy, V. N. Bert, N. A.; Chaldyshev, V. V.; Preobrazhernskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

    2015-12-15

    A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by low-temperature epitaxy which provides a large excess of arsenic in the epitaxial GaAs layer. During the growth of subsequent layers at a higher temperature, excess arsenic forms nanoinclusions, i.e., metal quantum dots in the GaAs matrix. The two-dimensional array of such metal quantum dots is created by the δ doping of a low-temperature GaAs layer with antimony which serves as a precursor for the heterogeneous nucleation of metal quantum dots and accumulates in them with the formation of AsSb metal alloy. The two-dimensional array of InAs semiconductor quantum dots is formed via the Stranski–Krastanov mechanism at the GaAs surface. Between the arrays of metal and semiconductor quantum dots, a 3-nm-thick AlAs barrier layer is grown. The total spacing between the arrays of metal and semiconductor quantum dots is 10 nm. Electron microscopy of the structure shows that the arrangement of metal quantum dots and semiconductor quantum dots in the two-dimensional arrays is spatially correlated. The spatial correlation is apparently caused by elastic strain and stress fields produced by both AsSb metal and InAs semiconductor quantum dots in the GaAs matrix.

  13. Metal Oxide Reduction Linked to Anaerobic Methane Oxidation.

    PubMed

    Oni, Oluwatobi E; Friedrich, Michael W

    2017-02-01

    Microbial methanotrophy is important in mitigating methane emissions to the atmosphere. Geochemical evidence suggests the occurrence of anaerobic methane oxidation with metal oxides in natural environments. A study has now identified, for the first time, novel freshwater archaea of the order Methanosarcinales that can oxidize methane with Fe(III) and Mn(IV) minerals as electron acceptors.

  14. General synthetic approach to heterostructured nanocrystals based on noble metals and I-VI, II-VI, and I-III-VI metal chalcogenides.

    PubMed

    Liu, Minghui; Zeng, Hua Chun

    2014-08-19

    Solid metal precursors (alloys or monometals) can serve both as a starting template and as a source material for chemical transformation to metal chalcogenides. Herein, we develop a simple solution-based strategy to obtain highly monodisperse noble-metal-based heterostructured nanocrystals from such precursor seeds. By utilizing chemical and structural inhomogeneity of these metal seeds, in this work, we have synthesized a total of five I-VI (Ag2S, Ag2Se, Ag3AuS2, Ag3AuSe2, and Cu9S5), three II-VI (CdS, CdSe, and CuSe), and four I-III-VI (AgInS2, AgInSe2, CuInS2, and CuInSe2) chalcogenides, together with their fifteen associated heterodimers (Au-Ag2S, Au-Ag2Se, Au-Ag3AuS2, Au-Ag3AuSe2, Au-AgInS2, Au-AgInSe2, Au-CdS, Au-CdSe, Ag-Ag2S, Ag-AgInS2, Au-Cu9S5, Au-CuInS2, Au-CuSe, Au-CuInSe2, and Pt-AgInS2) to affirm the process generality. Briefly, by adding elemental sulfur or selenium to AuAg alloy seeds and tuning the reaction conditions, we can readily obtain phase-pure Au-Ag2S, Au-Ag2Se, Au-Ag3AuS2, and Au-Ag3AuSe2 heterostructures. Similarly, we can also fabricate Au-AgInS2 and Au-AgInSe2 heterostructures from the AuAg seeds by adding sulfur/selenium and indium precursors. Furthermore, by partial or full conversion of Ag seeds, we can prepare both single-phase Ag chalcogenide nanocrystals and Ag-based heterostructures. To demonstrate wide applicability of this strategy, we have also synthesized Au-based binary and ternary Cu chalcogenide (Au-Cu9S5, Au-CuSe, Au-CuInS2, and Au-CuInSe2) heterostructures from alloy seeds of AuCu and Pt chalcogenides (e.g., Pt-AgInS2) from alloy seeds of PtAg. The structure and composition of the above products have been confirmed with X-ray diffraction, high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and energy-dispersive X-ray spectroscopy methods. A kinetic investigation of the formation mechanism of these heterostructures is brought forward using Au-AgInS2 and Ag-CuInS2 as model examples.

  15. Photoluminescence and photocatalytic activities of Ag/ZnO metal-semiconductor heterostructure

    NASA Astrophysics Data System (ADS)

    Sarma, Bikash; Deb, Sujit Kumar; Sarma, Bimal K.

    2016-10-01

    Present article focuses on the photocatalytic activities of ZnO nanorods and Ag/ZnO heterostructure deposited on polyethylene terephthalate (PET) substrate. ZnO nanorods are synthesized by thermal decomposition technique and Ag nanoparticles deposition is done by photo-deposition technique using UV light. X-ray diffraction studies reveal that the ZnO nanorods are of hexagonal wurtzite structure. Further, as-prepared samples are characterized by Scanning Electron Microscopy (SEM), Photoluminescence (PL) spectroscopy and UV-Vis spectroscopy. The surface plasmon resonance response of Ag/ZnO is found at 420 nm. The photocatalytic activities of the samples are evaluated by photocatalytic decolorization of methyl orange (MO) dye with UV irradiation. The degradation rate of MO increases with increase in irradiation time. The degradation of MO follows the first order kinetics. The photocatalytic activity of Ag/ZnO heterostructure is found to be more than that of ZnO nanorods. The PL intensity of ZnO nanorods is stronger than that of the Ag/ZnO heterostructure. The strong PL intensity indicates high recombination rate of photoinduced charge carriers which lowers the photocatalytic activity of ZnO nanorods. The charge carrier recombination is effectively suppressed by introducing Ag nanoparticles on the surface of the ZnO nanorods. This study demonstrates a strong relationship between PL intensity and photocatalytic activity.

  16. Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

    PubMed Central

    2016-01-01

    In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the integration of InAs/Si heterostructures into Si nanowires by ion implantation and flash lamp annealing, we developed a routine that has proven to be suitable for the monolithic integration of GaAs nanocrystallite segments into the core of silicon nanowires. The formation of a Ga segment adjacent to longer GaAs nanocrystallites resulted in Schottky-diode-like I/V characteristics with distinct electroluminescence originating from the GaAs nanocrystallite for the nanowire device operated in the reverse breakdown regime. The observed electroluminescence was ascribed to radiative band-to-band recombinations resulting in distinct emission peaks and a low contribution due to intraband transition, which were also observed under forward bias. Simulations of the obtained nanowire heterostructure confirmed the proposed impact ionization process responsible for hot carrier luminescence. This approach may enable a new route for on-chip photonic devices used for light emission or detection purposes. PMID:27168031

  17. Colloidal semiconductor/magnetic heterostructures based on iron-oxide-functionalized brookite TiO2 nanorods.

    PubMed

    Buonsanti, Raffaella; Snoeck, Etienne; Giannini, Cinzia; Gozzo, Fabia; Garcia-Hernandez, Mar; Angel Garcia, Miguel; Cingolani, Roberto; Cozzoli, Pantaleo Davide

    2009-05-21

    A flexible colloidal seeded-growth strategy has been developed to synthesize all-oxide semiconductor/magnetic hybrid nanocrystals (HNCs) in various topological arrangements, for which the dimensions of the constituent material domains can be controlled independently over a wide range. Our approach relies on driving preferential heterogeneous nucleation and growth of spinel cubic iron oxide (IO) domains onto brookite TiO2 nanorods (b-TiO2) with tailored geometric parameters, by means of time-programmed delivery of organometallic precursors into a suitable TiO2-loaded surfactant environment. The b-TiO2 seeds exhibit size-dependent accessibility towards IO under diffusion-controlled growth regime, which allows attainment of HNCs individually made of a single b-TiO2 section functionalized with either one or multiple nearly spherical IO domains. In spite of the dissimilarity of the respective crystal-phases, the two materials share large interfacial junctions without significant lattice strain being induced across the heterostructures. The synthetic achievements have been supported by a systematic morphological, compositional and structural characterization of the as-prepared HNCs, offering a mechanistic insight into the specific role of the seeds in the control of heterostructure formation in liquid media. In addition, the impact of the formed b-TiO2/IO heterojunctions on the magnetic properties of IO has also been assessed.

  18. Recent developments in complex metal oxide photoelectrodes

    NASA Astrophysics Data System (ADS)

    Abdi, Fatwa F.; Berglund, Sean P.

    2017-05-01

    Photoelectrochemical (PEC) water splitting, a process that directly produces hydrogen from water and sunlight using semiconductor materials, is an attractive form of renewable energy production. The hydrogen that is produced can be easily transported, stored, and utilized as a fuel without the emission of greenhouse gasses. However, many scientific and engineering challenges need to be overcome before PEC water splitting can be implemented on a large scale. One of the biggest challenges is the identification of suitable semiconductor materials to use in the construction of photoelectrodes. This topical review highlights a promising class of materials, complex metal oxides, which can be used as photoelectrodes for PEC water splitting. The advantages and limitations of complex metal oxides are first discussed, and strategies to overcome the limitations are outlined using the model case of bismuth vanadate (BiVO4), one of the highest performing complex metal oxide photoanodes reported to date. Building on the success story of BiVO4, we discuss pathways towards achieving even higher water splitting performance, including bandgap engineering as well as the development of alternative complex metal oxides with more appropriate bandgaps for obtaining high solar-to-hydrogen efficiency. Several classes of complex metal oxides (e.g. delafossites, tungstates, vanadates, spinels) are presented as promising candidates for photoelectrode materials. Finally, we conclude by summarizing the key properties of these complex metal oxides and providing an outlook towards expedited discovery of new and novel complex metal oxides for use as photoelectrodes.

  19. Ultrahigh-Power Pseudocapacitors Based on Ordered Porous Heterostructures of Electron-Correlated Oxides.

    PubMed

    Lang, Xing-You; Liu, Bo-Tian; Shi, Xiang-Mei; Li, Ying-Qi; Wen, Zi; Jiang, Qing

    2016-05-01

    Nanostructured transition-metal oxides can store high-density energy in fast surface redox reactions, but their poor conductivity causes remarkable reductions in the energy storage of most pseudocapacitors at high power delivery (fast charge/discharge rates). Here it is shown that electron-correlated oxide hybrid electrodes made of nanocrystalline vanadium sesquioxide and manganese dioxide with 3D and bicontinuous nanoporous architecture (NP V2O3/MnO2) have enhanced conductivity because of metallization of electron-correlated V2O3 skeleton via insulator-to-metal transition. The conductive V2O3 skeleton at ambient temperature enables fast electron and ion transports in the entire electrode and facilitates charge transfer at abundant V2O3/MnO2 interface. These merits significantly improve the pseudocapacitive behavior and rate capability of the constituent MnO2. Symmetric pseudocapacitors assembled with binder-free NP V2O3/MnO2 electrodes deliver ultrahigh electrical powers (up to ≈422 W cm(23)) while maintaining the high volumetric energy of thin-film lithium battery with excellent stability.

  20. Ultrahigh‐Power Pseudocapacitors Based on Ordered Porous Heterostructures of Electron‐Correlated Oxides

    PubMed Central

    Lang, Xing‐You; Liu, Bo‐Tian; Shi, Xiang‐Mei; Li, Ying‐Qi; Wen, Zi

    2016-01-01

    Nanostructured transition‐metal oxides can store high‐density energy in fast surface redox reactions, but their poor conductivity causes remarkable reductions in the energy storage of most pseudocapacitors at high power delivery (fast charge/discharge rates). Here it is shown that electron‐correlated oxide hybrid electrodes made of nanocrystalline vanadium sesquioxide and manganese dioxide with 3D and bicontinuous nanoporous architecture (NP V2O3/MnO2) have enhanced conductivity because of metallization of electron‐correlated V2O3 skeleton via insulator‐to‐metal transition. The conductive V2O3 skeleton at ambient temperature enables fast electron and ion transports in the entire electrode and facilitates charge transfer at abundant V2O3/MnO2 interface. These merits significantly improve the pseudocapacitive behavior and rate capability of the constituent MnO2. Symmetric pseudocapacitors assembled with binder‐free NP V2O3/MnO2 electrodes deliver ultrahigh electrical powers (up to ≈422 W cm23) while maintaining the high volumetric energy of thin‐film lithium battery with excellent stability. PMID:27812465

  1. Effect of thermal oxidation treatment on pH sensitivity of AlGaN/GaN heterostructure ion-sensitive field-effect transistors

    NASA Astrophysics Data System (ADS)

    Wang, Lei; Bu, Yuyu; Li, Liuan; Ao, Jin-Ping

    2017-07-01

    In this article, AlGaN/GaN heterostructure ion-sensitive field-effect transistors (ISFETs) were prepared and evaluated by thermal oxidation treatment on the AlGaN surface. The ISFETs were fabricated on the AlGaN/GaN heterostructure and then thermally oxidized with dry oxygen in 600, 700, and 800 °C, respectively. It indicates that the performance of the AlGaN/GaN heterostructure ISFETs, such as noise and sensitivity, has been improved owing to the thermal oxidation treatment process at different temperatures. The X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) results indicate that after thermal oxidation treatment at different temperatures, hydroxide who possesses high surface state density will transfer to oxide owing to the higher chemical stability of the latter. Moreover, a crystalline α-Al2O3 phase generated at 700 °C can not only provide a relatively smooth surface, but also improve the sensitivity to 57.7 mV/pH for the AlGaN/GaN heterostructure ISFETs, which is very close to the Nernstian limit.

  2. Effects of growth temperature on the properties of InGaN channel heterostructures grown by pulsed metal organic chemical vapor deposition

    SciTech Connect

    Zhang, Yachao; Zhou, Xiaowei; Xu, Shengrui; Wang, Zhizhe; Chen, Zhibin; Zhang, Jinfeng; Zhang, Jincheng E-mail: xd-zhangyachao@163.com; Hao, Yue E-mail: xd-zhangyachao@163.com

    2015-12-15

    Pulsed metal organic chemical vapor deposition (P-MOCVD) is introduced into the growth of high quality InGaN channel heterostructures. The effects of InGaN channel growth temperature on the structural and transport properties of the heterostructures are investigated in detail. High resolution x-ray diffraction (HRXRD) and Photoluminescence (PL) spectra indicate that the quality of InGaN channel strongly depends on the growth temperature. Meanwhile, the atomic force microscopy (AFM) results show that the interface morphology between the InGaN channel and the barrier layer also relies on the growth temperature. Since the variation of material properties of InGaN channel has a significant influence on the electrical properties of InAlN/InGaN heterostructures, the optimal transport properties can be achieved by adjusting the growth temperature. A very high two dimension electron gas (2DEG) density of 1.92 × 10{sup 13} cm{sup −2} and Hall electron mobility of 1025 cm{sup 2}/(V⋅s) at room temperature are obtained at the optimal growth temperature around 740 °C. The excellent transport properties in our work indicate that the heterostructure with InGaN channel is a promising candidate for the microwave power devices, and the results in this paper will be instructive for further study of the InGaN channel heterostructures.

  3. Au/metal oxides for low temperature CO oxidation

    SciTech Connect

    Srinivas, G.; Wright, J.; Bai, C.S.; Cook, R.

    1996-12-31

    Oxidation of carbon monoxide is important for several operations including fuel cells and carbon dioxide lasers. Room temperature CO oxidation has been investigated on a series of Au/metal oxide catalysts at conditions typical of spacecraft atmospheres; CO = 50 ppm, CO{sub 2} = 7,000 ppm, H{sub 2}O = 40% (RH) at 25{degrees}C, balance = air, and gas hourly space velocities of 7,000-60,000 hr{sup -1}. The addition of Au increases the room temperature CO oxidation activity of the metal oxides dramatically. All the Au/metal oxides deactivate during the CO oxidation reaction, especially in the presence of CO{sub 2} in the feed. The stability of the Au/metal oxide catalysts decreases in the following order: TiO{sub 2} > Fe{sub 2}O{sub 3} > NiO > Co{sub 3}O{sub 4}. The stability appears to decrease with an increase in the basicity of the metal oxides. In situ FTIR of CO adsorption on Au/TiO{sub 2} at 25{degrees}C indicates the formation of adsorbed CO, carboxylate, and carbonate species on the catalyst surface.

  4. Catalytic production of metal carbonyls from metal oxides

    DOEpatents

    Sapienza, R.S.; Slegeir, W.A.; Foran, M.T.

    1984-01-06

    This invention relates to the formation of metal carbonyls from metal oxides and specially the formation of molybdenum carbonyl and iron carbonyl from their respective oxides. Copper is used here in admixed form or used in chemically combined form as copper molybdate. The copper/metal oxide combination or combined copper is utilized with a solvent, such as toluene and subjected to carbon monoxide pressure of 25 atmospheres or greater at about 150 to 260/sup 0/C. The reducing metal copper is employed in catalytic concentrations or combined concentrations as CuMoO/sub 4/ and both hydrogen and water present serve as promoters. It has been found that the yields by this process have been salutary and that additionally the catalytic metal may be reused in the process to good effect. 3 tables.

  5. Catalytic production of metal carbonyls from metal oxides

    DOEpatents

    Sapienza, Richard S.; Slegeir, William A.; Foran, Michael T.

    1984-01-01

    This invention relates to the formation of metal carbonyls from metal oxides and specially the formation of molybdenum carbonyl and iron carbonyl from their respective oxides. Copper is used here in admixed form or used in chemically combined form as copper molybdate. The copper/metal oxide combination or combined copper is utilized with a solvent, such as toluene and subjected to carbon monoxide pressure of 25 atmospheres or greater at about 150.degree.-260.degree. C. The reducing metal copper is employed in catalytic concentrations or combined concentrations as CuMoO.sub.4 and both hydrogen and water present serve as promoters. It has been found that the yields by this process have been salutary and that additionally the catalytic metal may be reused in the process to good effect.

  6. Metal Alkoxides - Models for Metal Oxides.

    DTIC Science & Technology

    1982-07-29

    metal bonded adaptations of the well known hollandite structure and closely -elated to the cluster found for CsNbCi1 1 . Triangulo Mo3 and W3 units are... triangulo complex- es as is shown in Figure 2. In both cases, the molybdenum atoms are surrounded by six oxygen ligands in a distorted octahedral manner

  7. Trace metal concentrations in oxidation ponds

    SciTech Connect

    Suffern, J.S.; Fitzgerald, C.M.; Szluha, A.T.

    1981-11-01

    Heavy metal concentrations of Cd, Cr, Cu, Ni, Pb, and Zn in the wastewater, sludge, and biotic components of the Oak Ridge National Laboratory oxidation ponds were examined to determine whether metals accumulated in tilapia. Results indicated that metal levels in the wastewater and biotic components are generally low and that the major metal reservoir is the sludge. Metals did not accumulate beyond established standards in the muscle or liver of tilapia grown in the oxidation ponds. This result may be partially due to the rapid growth rates of these fish (1-2 g fish/sup -1//day/sup -1/), with new tissue developing more rapidly than metals can accumulate. Another factor may be that the high concentrations of organic complexes in the ponds lower the availability of metals to the biota.

  8. Multilevel metallization method for fabricating a metal oxide semiconductor device

    NASA Technical Reports Server (NTRS)

    Hollis, B. R., Jr.; Feltner, W. R.; Bouldin, D. L.; Routh, D. E. (Inventor)

    1978-01-01

    An improved method is described of constructing a metal oxide semiconductor device having multiple layers of metal deposited by dc magnetron sputtering at low dc voltages and low substrate temperatures. The method provides multilevel interconnections and cross over between individual circuit elements in integrated circuits without significantly reducing the reliability or seriously affecting the yield.

  9. Development of techniques for processing metal-metal oxide systems

    NASA Technical Reports Server (NTRS)

    Johnson, P. C.

    1976-01-01

    Techniques for producing model metal-metal oxide systems for the purpose of evaluating the results of processing such systems in the low-gravity environment afforded by a drop tower facility are described. Because of the lack of success in producing suitable materials samples and techniques for processing in the 3.5 seconds available, the program was discontinued.

  10. Fabrication of ordered metallic and magnetic heterostructured DNA-Nanoparticle hybrids.

    PubMed

    Kinsella, Joseph M; Ivanisevic, Albena

    2008-06-01

    Here we provide a method based on enzymatically catalyzed reactions to cleave and ligate DNA molecules coated with nanoparticles to fabricate multi-component structures. This is done by simultaneously digesting two solutions of nanoparticle coated DNA, one with iron oxide particles the other gold particles, which yields short DNA fragments with complementary single stranded overhangs. When added together and re-attached using ligase enzymes multi-component nanoparticle coated structures are formed providing a novel method to fabricate complicated nanoparticle arrangements from the bottom up. We evaluated the fabrication by characterizing the samples with gel electrophoresis and magnetic force microscopy (MFM). The electrophoresis provides proof that the coated DNA molecules were digested with restriction enzymes and ligated by the T4 ligase enzymes. MFM experiments allow us to visualize the multi-component strands and analyze the magnetic versus metallic segments.

  11. Mesoporous Transition Metal Oxides for Supercapacitors

    PubMed Central

    Wang, Yan; Guo, Jin; Wang, Tingfeng; Shao, Junfeng; Wang, Dong; Yang, Ying-Wei

    2015-01-01

    Recently, transition metal oxides, such as ruthenium oxide (RuO2), manganese dioxide (MnO2), nickel oxides (NiO) and cobalt oxide (Co3O4), have been widely investigated as electrode materials for pseudo-capacitors. In particular, these metal oxides with mesoporous structures have become very hot nanomaterials in the field of supercapacitors owing to their large specific surface areas and suitable pore size distributions. The high specific capacities of these mesoporous metal oxides are resulted from the effective contacts between electrode materials and electrolytes as well as fast transportation of ions and electrons in the bulk of electrode and at the interface of electrode and electrolyte. During the past decade, many achievements on mesoporous transition metal oxides have been made. In this mini-review, we select several typical nanomaterials, such as RuO2, MnO2, NiO, Co3O4 and nickel cobaltite (NiCo2O4), and briefly summarize the recent research progress of these mesoporous transition metal oxides-based electrodes in the field of supercapacitors. PMID:28347088

  12. Antimicrobial activity of the metals and metal oxide nanoparticles.

    PubMed

    Dizaj, Solmaz Maleki; Lotfipour, Farzaneh; Barzegar-Jalali, Mohammad; Zarrintan, Mohammad Hossein; Adibkia, Khosro

    2014-11-01

    The ever increasing resistance of pathogens towards antibiotics has caused serious health problems in the recent years. It has been shown that by combining modern technologies such as nanotechnology and material science with intrinsic antimicrobial activity of the metals, novel applications for these substances could be identified. According to the reports, metal and metal oxide nanoparticles represent a group of materials which were investigated in respect to their antimicrobial effects. In the present review, we focused on the recent research works concerning antimicrobial activity of metal and metal oxide nanoparticles together with their mechanism of action. Reviewed literature indicated that the particle size was the essential parameter which determined the antimicrobial effectiveness of the metal nanoparticles. Combination therapy with the metal nanoparticles might be one of the possible strategies to overcome the current bacterial resistance to the antibacterial agents. However, further studies should be performed to minimize the toxicity of metal and metal oxide nanoparticles to apply as proper alternatives for antibiotics and disinfectants especially in biomedical applications.

  13. Ordered mesoporous metal oxides: synthesis and applications.

    PubMed

    Ren, Yu; Ma, Zhen; Bruce, Peter G

    2012-07-21

    Great progress has been made in the preparation and application of ordered mesoporous metal oxides during the past decade. However, the applications of these novel and interesting materials have not been reviewed comprehensively in the literature. In the current review we first describe different methods for the preparation of ordered mesoporous metal oxides; we then review their applications in energy conversion and storage, catalysis, sensing, adsorption and separation. The correlations between the textural properties of ordered mesoporous metal oxides and their specific performance are highlighted in different examples, including the rate of Li intercalation, sensing, and the magnetic properties. These results demonstrate that the mesoporosity has a direct impact on the properties and potential applications of such materials. Although the scope of the current review is limited to ordered mesoporous metal oxides, we believe that the information may be useful for those working in a number of fields.

  14. High surface area, electrically conductive nanocarbon-supported metal oxide

    DOEpatents

    Worsley, Marcus A.; Han, Thomas Yong-Jin; Kuntz, Joshua D.; Cervantes, Octavio; Gash, Alexander E.; Baumann, Theodore F.; Satcher, Jr., Joe H.

    2015-07-14

    A metal oxide-carbon composite includes a carbon aerogel with an oxide overcoat. The metal oxide-carbon composite is made by providing a carbon aerogel, immersing the carbon aerogel in a metal oxide sol under a vacuum, raising the carbon aerogel with the metal oxide sol to atmospheric pressure, curing the carbon aerogel with the metal oxide sol at room temperature, and drying the carbon aerogel with the metal oxide sol to produce the metal oxide-carbon composite. The step of providing a carbon aerogel can provide an activated carbon aerogel or provide a carbon aerogel with carbon nanotubes that make the carbon aerogel mechanically robust.

  15. High surface area, electrically conductive nanocarbon-supported metal oxide

    SciTech Connect

    Worsley, Marcus A; Han, Thomas Yong-Jin; Kuntz, Joshua D; Cervanted, Octavio; Gash, Alexander E; Baumann, Theodore F; Satcher, Jr., Joe H

    2014-03-04

    A metal oxide-carbon composite includes a carbon aerogel with an oxide overcoat. The metal oxide-carbon composite is made by providing a carbon aerogel, immersing the carbon aerogel in a metal oxide sol under a vacuum, raising the carbon aerogel with the metal oxide sol to atmospheric pressure, curing the carbon aerogel with the metal oxide sol at room temperature, and drying the carbon aerogel with the metal oxide sol to produce the metal oxide-carbon composite. The step of providing a carbon aerogel can provide an activated carbon aerogel or provide a carbon aerogel with carbon nanotubes that make the carbon aerogel mechanically robust.

  16. Lithium metal oxide electrodes for lithium batteries

    DOEpatents

    Thackeray, Michael M.; Kim, Jeom-Soo; Johnson, Christopher S.

    2008-01-01

    An uncycled electrode for a non-aqueous lithium electrochemical cell including a lithium metal oxide having the formula Li.sub.(2+2x)/(2+x)M'.sub.2x/(2+x)M.sub.(2-2x)/(2+x)O.sub.2-.delta., in which 0.ltoreq.x<1 and .delta. is less than 0.2, and in which M is a non-lithium metal ion with an average trivalent oxidation state selected from two or more of the first row transition metals or lighter metal elements in the periodic table, and M' is one or more ions with an average tetravalent oxidation state selected from the first and second row transition metal elements and Sn. Methods of preconditioning the electrodes are disclosed as are electrochemical cells and batteries containing the electrodes.

  17. Process for etching mixed metal oxides

    DOEpatents

    Ashby, C.I.H.; Ginley, D.S.

    1994-10-18

    An etching process is described using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstrom range may be achieved by this method. 1 fig.

  18. Process for etching mixed metal oxides

    DOEpatents

    Ashby, Carol I. H.; Ginley, David S.

    1994-01-01

    An etching process using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstom range may be achieved by this method.

  19. Magnetically dependent superconducting transport in oxide heterostructures with an antiferromagnetic layer

    NASA Astrophysics Data System (ADS)

    Kislinskii, Y. V.; Konstantinian, K. Y.; Ovsyannikov, G. A.; Komissinskiy, P. V.; Borisenko, I. V.; Shadrin, A. V.

    2008-04-01

    The superconducting current in hybrid superconducting structures Nb/Au/Ca1- x Sr x CuO2/YBa2Cu3O7- δ with an antiferromagnetic layer is experimentally shown to have a Josephson nature, and the deviation from the sinusoidal dependence of the superconducting current on the phase difference between superconducting electrodes is about 20% of the second harmonic. These heterostructures are found to have sensitivity to an applied magnetic field that is much higher than that of conventional Josephson junctions. The experimental shape of the magnetic-field dependence of the critical current in the heterostructures differs from the usual Fraunhofer shape by oscillation with a significantly smaller period along a magnetic field.

  20. Study on Metal/Metal oxide/Graphene Tunnel Junctions

    NASA Astrophysics Data System (ADS)

    Chen, Ke; Feng, Ying; Khalid Zahir, Raja

    2013-03-01

    Metal/metal-oxide/graphene (Metal = Al, Ti, Hf, Zr) tunnel junctions were fabricated by transferring single-layer graphene grown by chemical vapor deposition on Cu onto metal strips by either a wet or dry approach. The metal strips were prepared by dc magnetron sputtering through a shadow mask and were exposed to air for about 10 minutes for native oxides to grow prior to the transfer. Good tunneling properties were observed for all the junctions fabricated by either means of graphene transfer. The zero-bias resistance of these junctions all increases with time to a final value, indicating continuing oxidation of the metals with a self-limited oxidation rate. Some junctions show the final area-normalized zero-bias resistances and self-limited oxidation time scales for Al, Ti, Hf, Zr are about 0.15, 0.2, 6000, 1000 k Ωcm2 and 25, 90, 6, 9 hour, respectively. The tunneling spectra were studied at various temperature down to 4.2 K and analyzed by the Brinkman-Dynes-Rowell model to get the height and width of the tunnel barriers, taking into account the electron structure of graphene. The junctions are good candidates for chemical sensing applications.

  1. Aerosol-spray diverse mesoporous metal oxides from metal nitrates

    PubMed Central

    Kuai, Long; Wang, Junxin; Ming, Tian; Fang, Caihong; Sun, Zhenhua; Geng, Baoyou; Wang, Jianfang

    2015-01-01

    Transition metal oxides are widely used in solar cells, batteries, transistors, memories, transparent conductive electrodes, photocatalysts, gas sensors, supercapacitors, and smart windows. In many of these applications, large surface areas and pore volumes can enhance molecular adsorption, facilitate ion transfer, and increase interfacial areas; the formation of complex oxides (mixed, doped, multimetallic oxides and oxide-based hybrids) can alter electronic band structures, modify/enhance charge carrier concentrations/separation, and introduce desired functionalities. A general synthetic approach to diverse mesoporous metal oxides is therefore very attractive. Here we describe a powerful aerosol-spray method for synthesizing various mesoporous metal oxides from low-cost nitrate salts. During spray, thermal heating of precursor droplets drives solvent evaporation and induces surfactant-directed formation of mesostructures, nitrate decomposition and oxide cross-linking. Thirteen types of monometallic oxides and four groups of complex ones are successfully produced, with mesoporous iron oxide microspheres demonstrated for photocatalytic oxygen evolution and gas sensing with superior performances. PMID:25897988

  2. Aerosol-spray diverse mesoporous metal oxides from metal nitrates.

    PubMed

    Kuai, Long; Wang, Junxin; Ming, Tian; Fang, Caihong; Sun, Zhenhua; Geng, Baoyou; Wang, Jianfang

    2015-04-21

    Transition metal oxides are widely used in solar cells, batteries, transistors, memories, transparent conductive electrodes, photocatalysts, gas sensors, supercapacitors, and smart windows. In many of these applications, large surface areas and pore volumes can enhance molecular adsorption, facilitate ion transfer, and increase interfacial areas; the formation of complex oxides (mixed, doped, multimetallic oxides and oxide-based hybrids) can alter electronic band structures, modify/enhance charge carrier concentrations/separation, and introduce desired functionalities. A general synthetic approach to diverse mesoporous metal oxides is therefore very attractive. Here we describe a powerful aerosol-spray method for synthesizing various mesoporous metal oxides from low-cost nitrate salts. During spray, thermal heating of precursor droplets drives solvent evaporation and induces surfactant-directed formation of mesostructures, nitrate decomposition and oxide cross-linking. Thirteen types of monometallic oxides and four groups of complex ones are successfully produced, with mesoporous iron oxide microspheres demonstrated for photocatalytic oxygen evolution and gas sensing with superior performances.

  3. Method for making monolithic metal oxide aerogels

    DOEpatents

    Coronado, Paul R.

    1999-01-01

    Transparent, monolithic metal oxide aerogels of varying densities are produced using a method in which a metal alkoxide solution and a catalyst solution are prepared separately and reacted. The resulting hydrolyzed-condensed colloidal solution is gelled, and the wet gel is contained within a sealed, but gas permeable, containment vessel during supercritical extraction of the solvent. The containment vessel is enclosed within an aqueous atmosphere that is above the supercritical temperature and pressure of the solvent of the metal alkoxide solution.

  4. Flexible heterostructures based on metal phthalocyanines thin films obtained by MAPLE

    NASA Astrophysics Data System (ADS)

    Socol, M.; Preda, N.; Rasoga, O.; Breazu, C.; Stavarache, I.; Stanculescu, F.; Socol, G.; Gherendi, F.; Grumezescu, V.; Popescu-Pelin, G.; Girtan, M.; Stefan, N.

    2016-06-01

    Heterostructures based on zinc phthalocyanine (ZnPc), magnesium phthalocyanine (MgPc) and 5,10,15,20-tetra(4-pyrydil)21H,23H-porphine (TPyP) were deposited on ITO flexible substrates by Matrix Assisted Pulsed Laser Evaporation (MAPLE) technique. Organic heterostructures containing (TPyP/ZnPc(MgPc)) stacked or (ZnPc(MgPc):TPyP) mixed layers were characterized by X-ray diffraction-XRD, photoluminescence-PL, UV-vis and FTIR spectroscopy. No chemical decomposition of the initial materials was observed. The investigated structures present a large spectral absorption in the visible range making them suitable for organic photovoltaics applications (OPV). Scanning electron microscopy-SEM and atomic force microscopy-AFM revealed morphologies typical for the films prepared by MAPLE. The current-voltage characteristics of the investigated structures, measured in dark and under light, present an improvement in the current value (∼3 order of magnitude larger) for the structure based on the mixed layer (Al/MgPc:TPyP/ITO) in comparison with the stacked layer (Al/MgPc//TPyP/ITO). A photogeneration process was evidenced in the case of structures Al/ZnPc:TPyP/ITO with mixed layers.

  5. Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion

    NASA Astrophysics Data System (ADS)

    Sung Park, Pil; Reddy, Kongara M.; Nath, Digbijoy N.; Yang, Zhichao; Padture, Nitin P.; Rajan, Siddharth

    2013-04-01

    A simple method for the creation of Ohmic contact to 2D electron gas in AlGaN/GaN high electron-mobility transistors using Cr/graphene layer is demonstrated. A weak temperature dependence of this Ohmic contact observed in the range 77 to 300 K precludes thermionic emission or trap-assisted hopping as possible carrier-transport mechanisms. It is suggested that the Cr/graphene combination acts akin to a doped n-type semiconductor in contact with AlGaN/GaN heterostructure, and promotes carrier transport along percolating Al-lean paths through the AlGaN layer. This use of graphene offers a simple method for making Ohmic contacts to AlGaN/GaN heterostructures, circumventing complex additional processing steps involving high temperatures. These results could have important implications for the fabrication and manufacturing of AlGaN/GaN-based microelectronic and optoelectronic devices/sensors of the future.

  6. Thermal stability of an InAlN/GaN heterostructure grown on silicon by metal-organic chemical vapor deposition

    SciTech Connect

    Watanabe, Arata Freedsman, Joseph J.; Urayama, Yuya; Christy, Dennis; Egawa, Takashi

    2015-12-21

    The thermal stabilities of metal-organic chemical vapor deposition-grown lattice-matched InAlN/GaN/Si heterostructures have been reported by using slower and faster growth rates for the InAlN barrier layer in particular. The temperature-dependent surface and two-dimensional electron gas (2-DEG) properties of these heterostructures were investigated by means of atomic force microscopy, photoluminescence excitation spectroscopy, and electrical characterization. Even at the annealing temperature of 850 °C, the InAlN layer grown with a slower growth rate exhibited a smooth surface morphology that resulted in excellent 2-DEG properties for the InAlN/GaN heterostructure. As a result, maximum values for the drain current density (I{sub DS,max}) and transconductance (g{sub m,max}) of 1.5 A/mm and 346 mS/mm, respectively, were achieved for the high-electron-mobility transistor (HEMT) fabricated on this heterostructure. The InAlN layer grown with a faster growth rate, however, exhibited degradation of the surface morphology at an annealing temperature of 850 °C, which caused compositional in-homogeneities and impacted the 2-DEG properties of the InAlN/GaN heterostructure. Additionally, an HEMT fabricated on this heterostructure yielded lower I{sub DS,max} and g{sub m,max} values of 1 A/mm and 210 mS/mm, respectively.

  7. Antitumor Activities of Metal Oxide Nanoparticles

    PubMed Central

    Vinardell, Maria Pilar; Mitjans, Montserrat

    2015-01-01

    Nanoparticles have received much attention recently due to their use in cancer therapy. Studies have shown that different metal oxide nanoparticles induce cytotoxicity in cancer cells, but not in normal cells. In some cases, such anticancer activity has been demonstrated to hold for the nanoparticle alone or in combination with different therapies, such as photocatalytic therapy or some anticancer drugs. Zinc oxide nanoparticles have been shown to have this activity alone or when loaded with an anticancer drug, such as doxorubicin. Other nanoparticles that show cytotoxic effects on cancer cells include cobalt oxide, iron oxide and copper oxide. The antitumor mechanism could work through the generation of reactive oxygen species or apoptosis and necrosis, among other possibilities. Here, we review the most significant antitumor results obtained with different metal oxide nanoparticles.

  8. Surfactant-free synthesis of novel copper oxide (CuO) nanowire-cobalt oxide (Co3O4) nanoparticle heterostructures and their morphological control

    NASA Astrophysics Data System (ADS)

    Shi, Wenwu; Chopra, Nitin

    2011-02-01

    A simple and surfactant-free synthesis of novel heterostructures comprising of copper oxide (CuO) nanowires uniformly decorated with cobalt oxide (Co3O4) nanoparticles was demonstrated by combining thermal growth and wet-coating method. The heterostructures were synthesized by thermally decomposing cobalt salt (cobalt nitrate) into Co3O4 nanoparticles onto vapor-solid (VS)-grown CuO nanowires. X-ray diffraction (XRD) and high resolution transmission electron microscopy (TEM) confirmed the presence of CuO and Co3O4 phases as well as a narrow size distribution of Co3O4 nanoparticles (average diameter 7.0 ± 1.5 nm) on CuO nanowires (average diameter of nanowire tips 67.9 ± 18.6 nm). Unique interfacial lattice relationship was observed for (111) Co3O4 nanoparticles on (200) CuO nanowire surface resulting in hemispherical shape of the former. For the first time, further systematic studies were performed to understand the influence of various parameters (cobalt salt concentration and annealing temperature, atmosphere, and time) on the morphological evolution of Co3O4 nanoparticles on CuO nanowires. Interestingly, by varying these parameters, it was possible to grow Co3O4 in different shapes (spherical, triangular, rectangular, cubical, and hexagonal nanoparticles) and forms (shells and nanorods). It was observed that all these parameters play a critical role in influencing the surface migration, nucleation, and growth of Co3O4 nanoparticles on CuO nanowires and this assisted in understanding the involved growth mechanisms. Finally, UV-vis-NIR spectroscopy and band gap energies for these heterostructures were evaluated that showed higher photocatalytic degradation efficiency for Rhodamine B under low-power visible-light illumination.

  9. Pure electronic metal-insulator transition at the interface of complex oxides

    PubMed Central

    Meyers, D.; Liu, Jian; Freeland, J. W.; Middey, S.; Kareev, M.; Kwon, Jihwan; Zuo, J. M.; Chuang, Yi-De; Kim, J. W.; Ryan, P. J.; Chakhalian, J.

    2016-01-01

    In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change. PMID:27324948

  10. Pure electronic metal-insulator transition at the interface of complex oxides

    SciTech Connect

    Meyers, D.; Liu, Jian; Freeland, J. W.; Middey, S.; Kareev, M.; Kwon, Jihwan; Zuo, J. M.; Chuang, Yi-De; Kim, J. W.; Ryan, P. J.; Chakhalian, J.

    2016-06-21

    We observed complex materials in electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. We demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. Furthermore, these findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.

  11. Synthesis and characterization of different metal oxide nanostructures by simple electrolysis based oxidation of metals.

    PubMed

    Singh, Dinesh Pratap; Srivastava, Onkar Nath

    2009-09-01

    We report the Synthesis of different metal oxide (Cu2O, SnO2, Fe3O4 and PbO2) nanostructures by simple electrolysis based oxidation of metals (Cu, Sn, Fe and Pb). We have utilized the two electrode set up for the electrolysis and used different metal electrodes as anode and platinum as cathode. The synthesized nanomaterials were delaminated in the electrolyte. The microstructural characterization of synthesized materials in electrolytes after electrolysis at different electrode potentials revealed that the nanostructures strongly depend on the applied voltage between the electrodes. Various nanostructures (nanothreads, nanowires, nanocubes, nanotetrapods and hexagons-like) of metal oxides have been synthesized by this method. In case of copper electrode we have found nanothreads and nanowires of cuprous oxide. Tin electrode resulted nanothreads, nanotetrapod and nanocube like structures of tin oxide. Iron electrode resulted, nanowire like structures of iron oxide and lead sheet transformed into hexagon like and six petals like structures of lead oxide.

  12. Langmuir-Blodgett assembly of visible light responsive TiO2 nanotube arrays/graphene oxide heterostructure

    NASA Astrophysics Data System (ADS)

    Chen, Ying; Gao, Hongyan; Wei, Danming; Dong, Xinju; Cao, Yan

    2017-01-01

    The hybrid nanocomposites of titanium dioxide (TiO2) with graphene oxide (GO) have recently garnered much attention as electronic devices, energy conversion devices, photocatalysts and other applications. In this study, Langmuir-Blodgett (LB) assembly method was firstly reported to prepare a TiO2 nanotube arrays (TNA)-GO heterostructure. The as-prepared TNA-GO sample was characterized by X-ray diffraction, Raman spectra, scanning electron microscopy, transmission electron microscopy, energy dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy. The promising characteristics of this TNA-GO material, the inexpensive, nontoxic and highly visible-light responsiveness, may raise the potential uses in many, various photocatalytic applications.

  13. PLUTONIUM METAL: OXIDATION CONSIDERATIONS AND APPROACH

    SciTech Connect

    Estochen, E.

    2013-03-20

    Plutonium is arguably the most unique of all metals when considered in the combined context of metallurgical, chemical, and nuclear behavior. Much of the research in understanding behavior and characteristics of plutonium materials has its genesis in work associated with nuclear weapons systems. However, with the advent of applications in fuel materials, the focus in plutonium science has been more towards nuclear fuel applications, as well as long term storage and disposition. The focus of discussion included herein is related to preparing plutonium materials to meet goals consistent with non-proliferation. More specifically, the emphasis is on the treatment of legacy plutonium, in primarily metallic form, and safe handling, packaging, and transport to meet non-proliferation goals of safe/secure storage. Elevated temperature oxidation of plutonium metal is the treatment of choice, due to extensive experiential data related to the method, as the oxide form of plutonium is one of only a few compounds that is relatively simple to produce, and stable over a large temperature range. Despite the simplicity of the steps required to oxidize plutonium metal, it is important to understand the behavior of plutonium to ensure that oxidation is conducted in a safe and effective manner. It is important to understand the effect of changes in environmental variables on the oxidation characteristics of plutonium. The primary purpose of this report is to present a brief summary of information related to plutonium metal attributes, behavior, methods for conversion to oxide, and the ancillary considerations related to processing and facility safety. The information provided is based on data available in the public domain and from experience in oxidation of such materials at various facilities in the United States. The report is provided as a general reference for implementation of a simple and safe plutonium metal oxidation technique.

  14. Topological States of Heterostructures

    NASA Astrophysics Data System (ADS)

    Usanmaz, Demet; Nath, Pinku; Plata, Jose J.; Buongiorno Nardelli, Marco; Fornari, Marco; Curtarolo, Stefano

    Topological insulators (TIs) have exotic properties, such as having insulating behavior in the bulk and metallic states at the surface [1]. Observations of metallic states rely on the spin-orbit induced band inversion in bulk materials and are protected by time-reversal symmetry or crystal symmetry [ 2 ]. These remarkable characteristics of TIs give rise to various applications from spintronics to quantum computers. In order to broaden the range of applications of TIs and make it more effective, an exploration of high quality heterostructures are required. Creating heterostructures of TIs has recently demonstrated to be advantageous for controlling electronic properties [3]. Inspired by these interesting properties, we have investigated the topological interface states of heterostructures.

  15. Integration of strained and relaxed silicon thin films on silicon wafers via engineered oxide heterostructures: Experiment and theory

    NASA Astrophysics Data System (ADS)

    Seifarth, O.; Dietrich, B.; Zaumseil, P.; Giussani, A.; Storck, P.; Schroeder, T.

    2010-10-01

    Strained and relaxed single crystalline Si on insulator systems is an important materials science approach for future Si-based nanoelectronics. Layer transfer techniques are the dominating global integration approach over the whole wafer system but are difficult to scale down for local integration purposes limited to the area of the future device. In this respect, the heteroepitaxy approach by two simple subsequent epitaxial deposition steps of the oxide and the Si thin film is a promising way. We introduce tailored (Pr2O3)1-x(Y2O3)x oxide heterostructures on Si(111) as flexible heteroepitaxy concept for the integration of either strained or fully relaxed single crystalline Si thin films. Two different buffer concepts are explored by a combined experimental and theoretical study. First, the growth of fully relaxed single crystalline Si films is achieved by the growth of mixed PrYO3 insulators on Si(111) whose lattice constant is matched to Si. Second, isomorphic oxide-on-oxide epitaxy is exploited to grow strained Si films on lattice mismatched Y2O3/Pr2O3/Si(111) support systems. A thickness dependent multilayer model, based on Matthew's approach for strain relaxation by misfit dislocations, is presented to describe the experimental data.

  16. High-performance heterostructured cathodes for lithium-ion batteries with a Ni-rich layered oxide core and a Li-rich layered oxide shell

    DOE PAGES

    Oh, Pilgun; Oh, Seung -Min; Li, Wangda; ...

    2016-05-30

    The Ni-rich layered oxides with a Ni content of >0.5 are drawing much attention recently to increase the energy density of lithium-ion batteries. However, the Ni-rich layered oxides suffer from aggressive reaction of the cathode surface with the organic electrolyte at the higher operating voltages, resulting in consequent impedance rise and capacity fade. To overcome this difficulty, we present here a heterostructure composed of a Ni-rich LiNi0.7Co0.15Mn0.15O2 core and a Li-rich Li1.2-xNi0.2Mn0.6O2 shell, incorporating the advantageous features of the structural stability of the core and chemical stability of the shell. With a unique chemical treatment for the activation of themore » Li2MnO3 phase of the shell, a high capacity is realized with the Li-rich shell material. Aberration-corrected scanning transmission electron microscopy (STEM) provides direct evidence for the formation of surface Li-rich shell layer. Finally, the heterostructure exhibits a high capacity retention of 98% and a discharge- voltage retention of 97% during 100 cycles with a discharge capacity of 190 mA h g-1 (at 2.0–4.5 V under C/3 rate, 1C = 200 mA g-1).« less

  17. High‐Performance Heterostructured Cathodes for Lithium‐Ion Batteries with a Ni‐Rich Layered Oxide Core and a Li‐Rich Layered Oxide Shell

    PubMed Central

    Oh, Pilgun; Oh, Seung‐Min; Li, Wangda; Myeong, Seunjun; Cho, Jaephil

    2016-01-01

    The Ni‐rich layered oxides with a Ni content of >0.5 are drawing much attention recently to increase the energy density of lithium‐ion batteries. However, the Ni‐rich layered oxides suffer from aggressive reaction of the cathode surface with the organic electrolyte at the higher operating voltages, resulting in consequent impedance rise and capacity fade. To overcome this difficulty, we present here a heterostructure composed of a Ni‐rich LiNi0.7Co0.15Mn0.15O2 core and a Li‐rich Li1.2− xNi0.2Mn0.6O2 shell, incorporating the advantageous features of the structural stability of the core and chemical stability of the shell. With a unique chemical treatment for the activation of the Li2MnO3 phase of the shell, a high capacity is realized with the Li‐rich shell material. Aberration‐corrected scanning transmission electron microscopy (STEM) provides direct evidence for the formation of surface Li‐rich shell layer. As a result, the heterostructure exhibits a high capacity retention of 98% and a discharge‐voltage retention of 97% during 100 cycles with a discharge capacity of 190 mA h g−1 (at 2.0–4.5 V under C/3 rate, 1C = 200 mA g−1). PMID:27980994

  18. Prolonged hot electron dynamics in plasmonic-metal/semiconductor heterostructures with implications for solar photocatalysis.

    PubMed

    DuChene, Joseph S; Sweeny, Brendan C; Johnston-Peck, Aaron C; Su, Dong; Stach, Eric A; Wei, Wei David

    2014-07-21

    Ideal solar-to-fuel photocatalysts must effectively harvest sunlight to generate significant quantities of long-lived charge carriers necessary for chemical reactions. Here we demonstrate the merits of augmenting traditional photoelectrochemical cells with plasmonic nanoparticles to satisfy these daunting photocatalytic requirements. Electrochemical techniques were employed to elucidate the mechanics of plasmon-mediated electron transfer within Au/TiO2 heterostructures under visible-light (λ>515 nm) irradiation in solution. Significantly, we discovered that these transferred electrons displayed excited-state lifetimes two orders of magnitude longer than those of electrons photogenerated directly within TiO2 via UV excitation. These long-lived electrons further enable visible-light-driven H2 evolution from water, heralding a new photocatalytic paradigm for solar energy conversion. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Metal-Insulator Transitions in Epitaxial LaVO(3) and LaTiO(3) Films

    DTIC Science & Technology

    2012-08-01

    are insulating in the bulk—has led to an explosion of research activity in perovskite transition-metal oxide heterostructures. The most well-known...ADDRESSES U.S. Army Research Office P.O. Box 12211 Research Triangle Park, NC 27709-2211 15. SUBJECT TERMS metal insulator transition, oxide ...effects must be duly taken into consideration when interpreting metallic behavior in these complex oxide heterostructures. This work is supported by the

  20. Lithium metal oxide electrodes for lithium batteries

    DOEpatents

    Thackeray, Michael M.; Johnson, Christopher S.; Amine, Khalil; Kang, Sun-Ho

    2010-06-08

    An uncycled preconditioned electrode for a non-aqueous lithium electrochemical cell including a lithium metal oxide having the formula xLi.sub.2-yH.sub.yO.xM'O.sub.2.(1-x)Li.sub.1-zH.sub.zMO.sub.2 in which 0metal ion with an average trivalent oxidation state selected from two or more of the first row transition metals or lighter metal elements in the periodic table, and M' is one or more ions with an average tetravalent oxidation state selected from the first and second row transition metal elements and Sn. The xLi.sub.2-yH.sub.y.xM'O.sub.2.(1-x)Li.sub.1-zH.sub.zMO.sub.2 material is prepared by preconditioning a precursor lithium metal oxide (i.e., xLi.sub.2M'O.sub.3.(1-x)LiMO.sub.2) with a proton-containing medium with a pH<7.0 containing an inorganic acid. Methods of preparing the electrodes are disclosed, as are electrochemical cells and batteries containing the electrodes.

  1. Stoichiometry-driven metal-to-insulator transition in NdTiO3/SrTiO3 heterostructures

    NASA Astrophysics Data System (ADS)

    Xu, Peng; Phelan, Daniel; Seok Jeong, Jong; Andre Mkhoyan, K.; Jalan, Bharat

    2014-02-01

    By controlling stoichiometry via a hybrid molecular beam epitaxy approach, we report on the study of thin film growth and the electronic transport properties of phase-pure, epitaxial NdTiO3/SrTiO3 heterostructures grown on (001) (La0.3Sr0.7)(Al0.65Ta0.35)O3 (LSAT) substrates as a function of cation stoichiometry in NdTiO3. Despite the symmetry mismatch between bulk NdTiO3 and the substrate, NdTiO3 films grew in an atomic layer-by-layer fashion over a range of cation stoichiometry; however amorphous films resulted in cases of extreme cation non-stoichiometry. Temperature-dependent sheet resistance measurements were consistent with Fermi-liquid metallic behavior over a wide temperature range, but revealed a remarkable crossover from metal-to-insulator (M-I) type behavior at low temperatures for all compositions. A direct correlation between cation stoichiometry, transport behavior, and the temperature of M-I transition is established.

  2. Enhanced photophysical properties of plasmonic magnetic metal-alloyed semiconductor heterostructure nanocrystals: a case study for the Ag@Ni/Zn1-xMgxO system.

    PubMed

    Paul, Sumana; Ghosh, Sirshendu; Saha, Manas; De, S K

    2016-05-14

    Understanding the effect of homovalent cation alloying in wide band gap ZnO and the formation of metal-semiconductor heterostructures is very important for maximisation of the photophysical properties of ZnO. Nearly monodisperse ZnO nanopyramid and Mg alloyed ZnO nanostructures have been successfully synthesized by one pot decomposition of metal stearate by using oleylamine both as activating and capping agent. The solid solubility of Mg(ii) ions in ZnO is limited to ∼30% without phase segregation. An interesting morphology change is found on increasing Mg alloying: from nanopyramids to self-assembled nanoflowers. The morphology change is explained by the oriented attachment process. The introduction of Mg into the ZnO matrix increases the band gap of the materials and also generates new zinc interstitial (Zni) and oxygen vacancy related defects. Plasmonic magnetic Ag@Ni core-shell (Ag as core and Ni as shell) nanocrystals are used as a seed material to synthesize Ag@Ni/Zn1-xMgxO complex heterostructures. Epitaxial growth is established between Ag(111) and ZnO(110) planes in the heterostructure. An epitaxial metal-semiconductor interface is very crucial for complete electron-hole (e-h) separation and enhancement of the exciton lifetime. The alloyed semiconductor-metal heterostructure is observed to be highly photocatalytically active for dye degradation as well as photodetection. Incorporation of magnetic Ni(0) makes the photocatalyst superparamagnetic at room temperature which is found to be helpful for catalyst regeneration.

  3. Atomic layer etchings of transition metal dichalcogenides with post healing procedures: equivalent selective etching of 2D crystal hetero-structures

    NASA Astrophysics Data System (ADS)

    Chen, Kuan-Chao; Chu, Tung-Wei; Wu, Chong-Rong; Lee, Si-Chen; Lin, Shih-Yen

    2017-09-01

    The atomic layer etchings of molybdenum disulfide (MoS2) and tungsten disulfide (WS2) are demonstrated in this paper. By using the oxygen plasma etching and the following re-sulfurization procedures, a mono-layer MoS2 sample with an enhanced photoluminescence intensity is obtained from the sample originally with bi-layer MoS2, which suggests that atomic layer etching of MoS2 can be achieved and the following re-sulfurization procedure can recover the partially oxidized MoS2 remained on the substrate back to a complete MoS2 film. By repeating oxygen plasma etchings and a final re-sulfurization procedure, multi-layer WS2 can be selectively etched off from the WS2/MoS2 hetero-structure. A top-gate WS2/MoS2 hetero-structure transistor is fabricated with source/drain electrodes contacted directly to the MoS2 channel by using the repeated atomic layer etching technique. The results have revealed that the equivalent selective etching effect for 2D crystal hetero-structures can be achieved by repeating the atomic layer etching procedure, which is an important step for the device fabrication of 2D crystal hetero-structures.

  4. Nanopowder Metal Oxide for Photoluminescent Gas Sensing

    NASA Astrophysics Data System (ADS)

    Zhyrovetsky, V. M.; Popovych, D. I.; Savka, S. S.; Serednytski, A. S.

    2017-02-01

    Gas sensing properties of metal oxide nanopowders (ZnO, TiO2, WO3, SnO2) with average diameters of 40-60 nm were analyzed by room-temperature photoluminescence spectroscopy. The influence of gas environment (O2, N2, H2, CO, CO2) on the emission intensity was investigated for metal oxide nanopowders with surface doped by impurities (Pt, Ag, Au, Sn, Ni or Cu). Established physicochemical regularities of modification of surface electronic states of initial and doped nanopowders during gas adsorption. The nature of metal oxide nanopowder gas-sensing properties (adsorption capacity, sensitivity, selectivity) has been established and the design and optimal materials for the construction of the multi-component sensing matrix have been selected.

  5. Metal sulfide initiators for metal oxide sorbent regeneration

    DOEpatents

    Turk, Brian S.; Gupta, Raghubir P.

    2001-01-01

    A process of regenerating a sulfided sorbent is provided. According to the process of the invention, a substantial portion of the energy necessary to initiate the regeneration reaction is provided by the combustion of a particulate metal sulfide additive. In using the particulate metal sulfide additive, the oxygen-containing gas used to regenerate the sulfided sorbent can be fed to the regeneration zone without heating or at a lower temperature than used in conventional processes wherein the regeneration reaction is initiated only by heating the oxygen-containing gas. The particulate metal sulfide additive is preferably an inexpensive mineral ore such as iron pyrite which does not adversely affect the regeneration or corresponding desulfurization reactions. The invention further includes a sorbent composition comprising the particulate metal sulfide additive in admixture with an active metal oxide sorbent capable of removing one or more sulfur compounds from a sulfur-containing gas stream.

  6. Metal sulfide initiators for metal oxide sorbent regeneration

    DOEpatents

    Turk, Brian S.; Gupta, Raghubir P.

    1999-01-01

    A process of regenerating a sulfided sorbent is provided. According to the process of the invention, a substantial portion of the energy necessary to initiate the regeneration reaction is provided by the combustion of a particulate metal sulfide additive. In using the particulate metal sulfide additive, the oxygen-containing gas used to regenerate the sulfided sorbent can be fed to the regeneration zone without heating or at a lower temperature than used in conventional processes wherein the regeneration reaction is initiated only by heating the oxygen-containing. The particulate metal sulfide additive is preferably an inexpensive mineral ore such as iron pyrite which does not adversely affect the regeneration or corresponding desulfurization reactions. The invention further includes a sorbent composition comprising the particulate metal sulfide additive in admixture with an active metal oxide sorbent capable of removing one or more sulfur compounds from a sulfur-containing gas stream.

  7. Metal sulfide initiators for metal oxide sorbent regeneration

    DOEpatents

    Turk, B.S.; Gupta, R.P.

    1999-06-22

    A process of regenerating a sulfided sorbent is provided. According to the process of the invention, a substantial portion of the energy necessary to initiate the regeneration reaction is provided by the combustion of a particulate metal sulfide additive. In using the particulate metal sulfide additive, the oxygen-containing gas used to regenerate the sulfided sorbent can be fed to the regeneration zone without heating or at a lower temperature than used in conventional processes wherein the regeneration reaction is initiated only by heating the oxygen-containing gas. The particulate metal sulfide additive is preferably an inexpensive mineral ore such as iron pyrite which does not adversely affect the regeneration or corresponding desulfurization reactions. The invention further includes a sorbent composition comprising the particulate metal sulfide additive in admixture with an active metal oxide sorbent capable of removing one or more sulfur compounds from a sulfur-containing gas stream. 1 fig.

  8. Designing heterostructures -- a route towards new superconductors

    NASA Astrophysics Data System (ADS)

    Kopp, Thilo

    2013-03-01

    By now it has become technologically feasible to grow controllably transition metal oxides layer by layer. In effect, the achieved progress allows to design heterostructures with optimized electronic properties. The talk will specifically address scenarios for interface superconductivity and the possibility to raise the transition temperature of bulk superconductors by layer design. Heterostructures offer a complexity beyond that of bulk materials. The nature of the superconducting states formed in layered materials and at interfaces is a fascinating topic of recent research which will be in the focus of this presentation. This work was supported by the DFG (TRR 80). I thankfully acknowledge the collaboration with Natalia Pavlenko, Peter Hirschfeld, Cyril Stephanos, Florian Loder, Arno Kampf, and Jochen Mannhart.

  9. Metal Oxide Materials and Decontamination Methodology

    DTIC Science & Technology

    1991-01-15

    polyoxometalates as photocatalysts for oxidative degradation. The abstract for this paper, reference 15, is as follows. This paper is undergoing revision and...substrates catalyzed by representative semiconductor metal oxides (anatase TiO2 , SnO2, cubic W03, and CdS) and photoredox active early transition metal...326"] = k4,I[THT]/k[TNT] + kic) is consistent with this data and the observation of saturation kinetics in TNT. Upon addition of 02, TiO2 (with or

  10. Regeneration of sulfated metal oxides and carbonates

    DOEpatents

    Hubble, Bill R.; Siegel, Stanley; Cunningham, Paul T.

    1978-03-28

    Alkali metal or alkaline earth metal carbonates such as calcium carbonate and magnesium carbonate found in dolomite or limestone are employed for removal of sulfur dioxide from combustion exhaust gases. The sulfated carbonates are regenerated to oxides through use of a solid-solid reaction, particularly calcium sulfide with calcium sulfate to form calcium oxide and sulfur dioxide gas. The regeneration is performed by contacting the sulfated material with a reductant gas such as hydrogen within an inert diluent to produce calcium sulfide in mixture with the sulfate under process conditions selected to permit the sulfide-sulfate, solid-state reaction to occur.

  11. Role of metal oxides in chemical evolution

    NASA Astrophysics Data System (ADS)

    Kamaluddin

    2013-06-01

    Steps of chemical evolution have been designated as formation of biomonomers followed by their polymerization and then to modify in an organized structure leading to the formation of first living cell. Formation of small molecules like amino acids, organic bases, sugar etc. could have occurred in the reducing atmosphere of the primitive Earth. Polymerization of these small molecules could have required some catalyst. In addition to clay, role of metal ions and metal complexes as prebiotic catalyst in the synthesis and polymerization of biomonomers cannot be ruled out. Metal oxides are important constituents of Earth crust and that of other planets. These oxides might have adsorbed organic molecules and catalyzed the condensation processes, which may have led to the formation of first living cell. Different studies were performed in order to investigate the role of metal oxides (especially oxides of iron and manganese) in chemical evolution. Iron oxides (goethite, akaganeite and hematite) as well as manganese oxides (MnO, Mn2O3, Mn3O4 and MnO2) were synthesized and their characterization was done using IR, powder XRD, FE-SEM and TEM. Role of above oxides was studied in the adsorption of ribose nucleotides, formation of nucleobases from formamide and oligomerization of amino acids. Above oxides of iron and manganese were found to have good adsorption affinity towards ribose nucleotides, high catalytic activity in the formation of several nucleobases from formamide and oligomerization of glycine and alanine. Characterization of products was performed using UV, IR, HPLC and ESI-MS techniques. Presence of hematite-water system on Mars has been suggested to be a positive indicator in the chemical evolution on Mars.

  12. Reduction of metal oxides through mechanochemical processing

    DOEpatents

    Froes, Francis H.; Eranezhuth, Baburaj G.; Senkov, Oleg N.

    2000-01-01

    The low temperature reduction of a metal oxide using mechanochemical processing techniques. The reduction reactions are induced mechanically by milling the reactants. In one embodiment of the invention, titanium oxide TiO.sub.2 is milled with CaH.sub.2 to produce TiH.sub.2. Low temperature heat treating, in the range of 400.degree. C. to 700.degree. C., can be used to remove the hydrogen in the titanium hydride.

  13. Metal ion binding to iron oxides

    NASA Astrophysics Data System (ADS)

    Ponthieu, M.; Juillot, F.; Hiemstra, T.; van Riemsdijk, W. H.; Benedetti, M. F.

    2006-06-01

    The biogeochemistry of trace elements (TE) is largely dependent upon their interaction with heterogeneous ligands including metal oxides and hydrous oxides of iron. The modeling of TE interactions with iron oxides has been pursued using a variety of chemical models. The objective of this work is to show that it is possible to model the adsorption of protons and TE on a crystallized oxide (i.e., goethite) and on an amorphous oxide (HFO) in an identical way. Here, we use the CD-MUSIC approach in combination with valuable and reliable surface spectroscopy information about the nature of surface complexes of the TE. The other objective of this work is to obtain generic parameters to describe the binding of the following elements (Cd, Co, Cu, Ni, Pb, and Zn) onto both iron oxides for the CD-MUSIC approach. The results show that a consistent description of proton and metal ion binding is possible for goethite and HFO with the same set of model parameters. In general a good prediction of almost all the collected experimental data sets corresponding to metal ion binding to HFO is obtained. Moreover, dominant surface species are in agreement with the recently published surface complexes derived from X-ray absorption spectroscopy (XAS) data. Until more detailed information on the structure of the two iron oxides is available, the present option seems a reasonable approximation and can be used to describe complex geochemical systems. To improve our understanding and modeling of multi-component systems we need more data obtained at much lower metal ion to iron oxide ratios in order to be able to account eventually for sites that are not always characterized in spectroscopic studies.

  14. Spectral and photoelectric characteristics of the gamma irradiated intrinsic oxide-InSe heterostructures obtained under different conditions

    NASA Astrophysics Data System (ADS)

    Sydor, O. M.

    2016-09-01

    The investigations of photoelectric characteristics and photoresponce spectral dependences were carried out for intrinsic oxide-InSe heterostructures (HSs) and their changes induced by bremsstrahlung γ-quanta with an energy of 1-34 MeV at fluences of 1012-1015 cm-2. The thermal oxidation of the p-InSe:Cd substrates was carried out at a temperature of 420 °C. For three selected groups of samples the duration of the process was 15 min, 60 min, and 96 h. At a short-term oxidation (15 and 60 min) a layer of In2O3 appears. The only difference between the samples of these two groups is a higher photosensitivity in the range of energy 1.25-2.8 eV of the HSs obtained after the 60 min oxidation. At the long-term oxidation the photoresponce spectra η(hν) of the obtained HSs are characterized with a sharp short-wavelength decrease at hν≅2.0 eV. It is established that the intrinsic oxide films act as transparent barrier electrodes in the corresponding HSs and are low-sensitive to γ-irradiation in the all range of fluences. The shape of the photoresponce spectra for all the gamma irradiated HSs remains practically the same. However, it was found: (i) some decrease of photosensitivity at the long-wavelength edge, (ii) decreasing the width of η(hν) at half-height, (iii) the appearance of the exciton peak, (iv) the improvement of a slope of the low-energy edge of the photoresponce spectra with increasing irradiation dose whereas at the maximum fluence this parameter decreases, and (v) the slight extension of the spectral sensitivity to the short-wavelength range for the structures obtained after oxidation for 96 h. The photoelectric parameters of the intrinsic oxide-p-InSe HSs, open circuit voltage Voc, short-circuit current Jsc, current SIλmax and voltage SVλmax sensitivities become only improved after irradiation with the fluences 1012-1013 cm-2. At the maximum fluence a small decreasing of the values of Voc and Jsc was detected except for the structures obtained

  15. Photovoltaic effect in an indium-tin-oxide/ZnO/BiFeO{sub 3}/Pt heterostructure

    SciTech Connect

    Fan, Zhen; Yao, Kui E-mail: msewangj@nus.edu.sg; Wang, John E-mail: msewangj@nus.edu.sg

    2014-10-20

    We have studied the photovoltaic effect in a metal/semiconductor/ferroelectric/metal heterostructure of In{sub 2}O{sub 3}-SnO{sub 2}/ZnO/BiFeO{sub 3}/Pt (ITO/ZnO/BFO/Pt) multilayer thin films. The heterolayered structure shows a short-circuit current density (J{sub sc}) of 340 μA/cm{sup 2} and an energy conversion efficiency of up to 0.33% under blue monochromatic illumination. The photovoltaic mechanism, specifically in terms of the major generation site of photo-excited electron-hole (e-h) pairs and the driving forces for the separation of e-h pairs, is clarified. The significant increase in photocurrent of the ITO/ZnO/BFO/Pt compared to that of ITO/BFO/Pt is attributed to the abundant e-h pairs generated from ZnO. Ultraviolet photoelectron spectroscopy reveals the energy band alignment of ITO/ZnO/BFO/Pt, where a Schottky barrier and an n{sup +}-n junction are formed at the BFO/Pt and ZnO/BFO interfaces, respectively. Therefore, two built-in fields developed at the two interfaces are constructively responsible for the separation and transport of photo-excited e-h pairs.

  16. Advanced metal oxide varistor concepts

    NASA Astrophysics Data System (ADS)

    Philipp, H. R.; Mahan, G. D.; Levinson, L. M.

    1984-07-01

    Zinc oxide varistors are ZnO-based ceramic semiconductor devices with highly nonlinear current-voltage characteristics similar to back-to-back Zener diodes but with much greater current, voltage, and energy-handling capabilities. Zinc oxide varistors have proven useful in a variety of applications, particularly as high-quality voltage suppression devices for the protection of ac and dc electric power transmission systems against the effects of transient overvoltages due to switching surges and lightning strikes. Simple varistor systems that use Bi or Pr as the varistor-forming additive and Co or Mn as the varistor-performance ingredient were studied. Commercial varistor materials generally use Bi as the varistor-forming ingredient, and the sintering process in such material probably proceeds in the liquid phase. Varistor materials that use Pr as the varistor-forming ingredient are also produced commercially.

  17. Photoelectrochemical water splitting enhanced by self-assembled metal nanopillars embedded in an oxide semiconductor photoelectrode

    PubMed Central

    Kawasaki, Seiji; Takahashi, Ryota; Yamamoto, Takahisa; Kobayashi, Masaki; Kumigashira, Hiroshi; Yoshinobu, Jun; Komori, Fumio; Kudo, Akihiko; Lippmaa, Mikk

    2016-01-01

    Production of chemical fuels by direct solar energy conversion in a photoelectrochemical cell is of great practical interest for developing a sustainable energy system. Various nanoscale designs such as nanowires, nanotubes, heterostructures and nanocomposites have been explored to increase the energy conversion efficiency of photoelectrochemical water splitting. Here we demonstrate a self-organized nanocomposite material concept for enhancing the efficiency of photocarrier separation and electrochemical energy conversion. Mechanically robust photoelectrodes are formed by embedding self-assembled metal nanopillars in a semiconductor thin film, forming tubular Schottky junctions around each pillar. The photocarrier transport efficiency is strongly enhanced in the Schottky space charge regions while the pillars provide an efficient charge extraction path. Ir-doped SrTiO3 with embedded iridium metal nanopillars shows good operational stability in a water oxidation reaction and achieves over 80% utilization of photogenerated carriers under visible light in the 400- to 600-nm wavelength range. PMID:27255209

  18. Schottky barrier at graphene/metal oxide interfaces: insight from first-principles calculations

    PubMed Central

    Cheng, Kai; Han, Nannan; Su, Yan; Zhang, Junfeng; Zhao, Jijun

    2017-01-01

    Anode materials play an important role in determining the performance of lithium ion batteries. In experiment, graphene (GR)/metal oxide (MO) composites possess excellent electrochemical properties and are promising anode materials. Here we perform density functional theory calculations to explore the interfacial interaction between GR and MO. Our result reveals generally weak physical interactions between GR and several MOs (including Cu2O, NiO). The Schottky barrier height (SBH) in these metal/semiconductor heterostructures are computed using the macroscopically averaged electrostatic potential method, and the role of interfacial dipole is discussed. The calculated SBHs below 1 eV suggest low contact resistance; thus these GR/MO composites are favorable anode materials for better lithium ion batteries. PMID:28165485

  19. Schottky barrier at graphene/metal oxide interfaces: insight from first-principles calculations

    NASA Astrophysics Data System (ADS)

    Cheng, Kai; Han, Nannan; Su, Yan; Zhang, Junfeng; Zhao, Jijun

    2017-02-01

    Anode materials play an important role in determining the performance of lithium ion batteries. In experiment, graphene (GR)/metal oxide (MO) composites possess excellent electrochemical properties and are promising anode materials. Here we perform density functional theory calculations to explore the interfacial interaction between GR and MO. Our result reveals generally weak physical interactions between GR and several MOs (including Cu2O, NiO). The Schottky barrier height (SBH) in these metal/semiconductor heterostructures are computed using the macroscopically averaged electrostatic potential method, and the role of interfacial dipole is discussed. The calculated SBHs below 1 eV suggest low contact resistance; thus these GR/MO composites are favorable anode materials for better lithium ion batteries.

  20. Photoelectrochemical water splitting enhanced by self-assembled metal nanopillars embedded in an oxide semiconductor photoelectrode

    NASA Astrophysics Data System (ADS)

    Kawasaki, Seiji; Takahashi, Ryota; Yamamoto, Takahisa; Kobayashi, Masaki; Kumigashira, Hiroshi; Yoshinobu, Jun; Komori, Fumio; Kudo, Akihiko; Lippmaa, Mikk

    2016-06-01

    Production of chemical fuels by direct solar energy conversion in a photoelectrochemical cell is of great practical interest for developing a sustainable energy system. Various nanoscale designs such as nanowires, nanotubes, heterostructures and nanocomposites have been explored to increase the energy conversion efficiency of photoelectrochemical water splitting. Here we demonstrate a self-organized nanocomposite material concept for enhancing the efficiency of photocarrier separation and electrochemical energy conversion. Mechanically robust photoelectrodes are formed by embedding self-assembled metal nanopillars in a semiconductor thin film, forming tubular Schottky junctions around each pillar. The photocarrier transport efficiency is strongly enhanced in the Schottky space charge regions while the pillars provide an efficient charge extraction path. Ir-doped SrTiO3 with embedded iridium metal nanopillars shows good operational stability in a water oxidation reaction and achieves over 80% utilization of photogenerated carriers under visible light in the 400- to 600-nm wavelength range.

  1. Mechanical Instability of Oxidized Metal Clusters

    NASA Astrophysics Data System (ADS)

    Celino, Massimo; Cleri, Fabrizio; D'Agostino, Gregorio; Rosato, Vittorio

    1996-09-01

    A mechanism to explain the complete oxidation of small metal clusters is proposed, based on the occurrence of a mechanical instability driven by the expansion of the progressively oxidized cluster surface and the subsequent stress relaxation. Molecular dynamics simulations of spherical Pd clusters show that an expanded surface layer is capable of straining the inner core of the cluster up to the point of inducing cavitation. These findings allow the interpretation of recent experimental results in which oxidized Pd clusters exhibit a hollow spherical shape.

  2. Metal oxide electrocatalysts for alternative energy technologies

    NASA Astrophysics Data System (ADS)

    Pacquette, Adele Lawren

    This dissertation focuses on the development of metal oxide electrocatalysts with varying applications for alternative energy technologies. Interest in utilizing clean, renewable and sustainable sources of energy for powering the planet in the future has received much attention. This will address the growing concern of the need to reduce our dependence on fossil fuels. The facile synthesis of metal oxides from earth abundant metals was explored in this work. The electrocatalysts can be incorporated into photoelectrochemical devices, fuel cells, and other energy storage devices. The first section addresses the utilization of semiconductors that can harness solar energy for water splitting to generate hydrogen. An oxysulfide was studied in order to combine the advantageous properties of the stability of metal oxides and the visible light absorbance of metal chalcogenides. Bi 2O2S was synthesized under facile hydrothermal conditions. The band gap of Bi2O2S was smaller than that of its oxide counterpart, Bi2O3. Light absorption by Bi 2O2S was extended to the visible region (>600 nm) in comparison to Bi2O3. The formation of a composite with In 2O3 was formed in order to create a UV irradiation protective coating of the Bi2O2S. The Bi2O2S/In 2O3 composite coupled with a dye CrTPP(Cl) and cocatalysts Pt and Co3O4 was utilized for water splitting under light irradiation to generate hydrogen and oxygen. The second section focuses on improving the stability and light absorption of semiconductors by changing the shapes and morphologies. One of the limitations of semiconductor materials is that recombination of electron-hole pairs occur within the bulk of the materials instead of migration to the surface. Three-dimensional shapes, such as nanorods, can prevent this recombination in comparison to spherical particles. Hierarchical structures, such as dendrites, cubes, and multipods, were synthesized under hydrothermal conditions, in order to reduce recombination and improve

  3. Microbial-mediated method for metal oxide nanoparticle formation

    DOEpatents

    Rondinone, Adam J.; Moon, Ji Won; Love, Lonnie J.; Yeary, Lucas W.; Phelps, Tommy J.

    2015-09-08

    The invention is directed to a method for producing metal oxide nanoparticles, the method comprising: (i) subjecting a combination of reaction components to conditions conducive to microbial-mediated formation of metal oxide nanoparticles, wherein said combination of reaction components comprise: metal-reducing microbes, a culture medium suitable for sustaining said metal-reducing microbes, an effective concentration of one or more surfactants, a reducible metal oxide component containing one or more reducible metal species, and one or more electron donors that provide donatable electrons to said metal-reducing microbes during consumption of the electron donor by said metal-reducing microbes; and (ii) isolating said metal oxide nanoparticles, which contain a reduced form of said reducible metal oxide component. The invention is also directed to metal oxide nanoparticle compositions produced by the inventive method.

  4. Strong electron-hole symmetric Rashba spin-orbit coupling in graphene/monolayer transition metal dichalcogenide heterostructures

    NASA Astrophysics Data System (ADS)

    Yang, Bowen; Lohmann, Mark; Barroso, David; Liao, Ingrid; Lin, Zhisheng; Liu, Yawen; Bartels, Ludwig; Watanabe, Kenji; Taniguchi, Takashi; Shi, Jing

    2017-07-01

    Despite its extremely weak intrinsic spin-orbit coupling (SOC), graphene has been shown to acquire considerable SOC by proximity coupling with exfoliated transition metal dichalcogenides (TMDs). Here we demonstrate strong induced Rashba SOC in graphene that is proximity coupled to a monolayer TMD film, Mo S2 or WS e2 , grown by chemical-vapor deposition with drastically different Fermi level positions. Graphene/TMD heterostructures are fabricated with a pickup-transfer technique utilizing hexagonal boron nitride, which serves as a flat template to promote intimate contact and therefore a strong interfacial interaction between TMD and graphene as evidenced by quenching of the TMD photoluminescence. We observe strong induced graphene SOC that manifests itself in a pronounced weak-antilocalization (WAL) effect in the graphene magnetoconductance. The spin-relaxation rate extracted from the WAL analysis varies linearly with the momentum scattering time and is independent of the carrier type. This indicates a dominantly Dyakonov-Perel spin-relaxation mechanism caused by the induced Rashba SOC. Our analysis yields a Rashba SOC energy of ˜1.5 meV in graphene/WS e2 and ˜0.9 meV in graphene/Mo S2 . The nearly electron-hole symmetric nature of the induced Rashba SOC provides a clue to possible underlying SOC mechanisms.

  5. Metal oxide chemistry in solution: the early transition metal polyoxoanions.

    PubMed

    Day, V W; Klemperer, W G

    1985-05-03

    Many of the early transition elements form large polynuclear metal-oxygen anions containing up to 200 atoms or more. Although these polyoxoanions have been investigated for more than a century, detailed studies of structure and reactivity were not possible until the development of modern x-ray crystallographic and nuclear magnetic resonance spectroscopic techniques. Systematic studies of small polyoxoanions in inert, aprotic solvents have clarified many of the principles governing their structure and reactivity, and also have made possible the preparation of entirely new types of covalent derivatives such as CH(2)Mo(4)O(15)H(3-), C(5)H(5)TiMo(5)O(18)(3-), and (OC)(3)Mn(Nb(2)W(4)O(19))(3-). Since most early transition metal polyoxoanions have structures based on close-packed oxygen arrays containing interstitial metal centers, their chemistry offers a rare opportunity to study chemical transformations in detail on well-defined metal oxide surfaces.

  6. Black phosphorene/monolayer transition-metal dichalcogenides as two dimensional van der Waals heterostructures: a first-principles study.

    PubMed

    You, Baiqing; Wang, Xiaocha; Zheng, Zhida; Mi, Wenbo

    2016-03-14

    The electronic structure of black phosphorene (BP)/monolayer 1H-XT2 (X = Mo, W; T = S, Se, Te) two dimensional (2D) van der Waals heterostructures have been calculated by the first-principles method. It is found that the electronic band structures of both BP and XT2 are preserved in the combined van der Waals heterostructures. The WSe2/BP van der Waals heterostructure demonstrates a type-I band alignment, but the MoS2/BP, MoSe2/BP, MoTe2/BP, WS2/BP and WTe2/BP van der Waals heterostructures demonstrate a type-II band alignment. In particular, the n-type XT2/p-type BP van der Waals heterostructures can be applied in p-n diode and logical devices. Strong spin splitting appears in all of the heterostructures when considering the spin orbital coupling. Our results play a significant role in the prediction of novel 2D van der Waals heterostructures that have potential applications in spin-filter devices, spin field effect transistors, optoelectronic devices, etc.

  7. Coaxial metal-oxide-semiconductor (MOS) Au/Ga2O3/GaN nanowires.

    PubMed

    Hsieh, Chin-Hua; Chang, Mu-Tung; Chien, Yu-Jen; Chou, Li-Jen; Chen, Lih-Juann; Chen, Chii-Dong

    2008-10-01

    Coaxial metal-oxide-semiconductor (MOS) Au-Ga2O3-GaN heterostructure nanowires were successfully fabricated by an in situ two-step process. The Au-Ga2O3 core-shell nanowires were first synthesized by the reaction of Ga powder, a mediated Au thin layer, and a SiO2 substrate at 800 degrees C. Subsequently, these core-shell nanowires were nitridized in ambient ammonia to form a GaN coating layer at 600 degrees C. The GaN shell is a single crystal, an atomic flat interface between the oxide and semiconductor that ensures that the high quality of the MOS device is achieved. These novel 1D nitride-based MOS nanowires may have promise as building blocks to the future nitride-based vertical nanodevices.

  8. Multi-metal oxide ceramic nanomaterial

    SciTech Connect

    O'Brien, Stephen; Liu, Shuangyi; Huang, Limin

    2016-06-07

    A convenient and versatile method for preparing complex metal oxides is disclosed. The method uses a low temperature, environmentally friendly gel-collection method to form a single phase nanomaterial. In one embodiment, the nanomaterial consists of Ba.sub.AMn.sub.BTi.sub.CO.sub.D in a controlled stoichiometry.

  9. InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Shapiro, J. N.; Lin, A.; Wong, P. S.; Scofield, A. C.; Tu, C.; Senanayake, P. N.; Mariani, G.; Liang, B. L.; Huffaker, D. L.

    2010-12-01

    We investigate axial GaAs/InGaAs/GaAs heterostructures embedded in GaAs nanopillars via catalyst-free selective-area metal-organic chemical vapor deposition. Structural characterization by transmission electron microscopy with energy dispersive x-ray spectroscopy (EDS) indicates formation of axial InxGa1-xAs (x˜0.20) inserts with thicknesses from 36 to 220 nm with ±10% variation and graded Ga:In transitions controlled by In segregation. Using the heterointerfaces as markers, the vertical growth rate is determined to increase linearly during growth. Photoluminescence from 77 to 290 K and EDS suggest the presence of strain in the shortest inserts. This capability to control the formation of axial nanopillar heterostructures is crucial for optimized device integration.

  10. Oxidative decomposition of formaldehyde by metal oxides at room temperature

    NASA Astrophysics Data System (ADS)

    Sekine, Yoshika

    Formaldehyde (HCHO) is still a major indoor air pollutant in Japanese air-tight houses and is the subject of numerous complaints regarding health disorders. Authors have developed a passive-type air-cleaning material and an air cleaner using manganese oxide (77% MnO 2) as an active component and successfully reduced indoor HCHO concentrations in newly built multi-family houses. In this study, the reactivity between manganese oxide and HCHO was discussed. We tested the removal efficiencies of several metal oxides for HCHO in a static reaction vessel and found manganese oxide could react with HCHO and release carbon dioxide even at room temperature. The reactivity and mechanisms were discussed for the proposed chemical reactions. A mass balance study proved that a major product through the heterogeneous reaction between manganese oxide and HCHO was carbon dioxide. Harmful by-products (HCOOH and CO) were not found.

  11. Monitoring non-pseudomorphic epitaxial growth of spinel/perovskite oxide heterostructures by reflection high-energy electron diffraction

    SciTech Connect

    Schütz, P.; Pfaff, F.; Scheiderer, P.; Sing, M.; Claessen, R.

    2015-02-09

    Pulsed laser deposition of spinel γ-Al{sub 2}O{sub 3} thin films on bulk perovskite SrTiO{sub 3} is monitored by high-pressure reflection high-energy electron diffraction (RHEED). The heteroepitaxial combination of two materials with different crystal structures is found to be inherently accompanied by a strong intensity modulation of bulk diffraction patterns from inelastically scattered electrons, which impedes the observation of RHEED intensity oscillations. Avoiding such electron surface-wave resonance enhancement by de-tuning the RHEED geometry allows for the separate observation of the surface-diffracted specular RHEED signal and thus the real-time monitoring of sub-unit cell two-dimensional layer-by-layer growth. Since these challenges are essentially rooted in the difference between film and substrate crystal structure, our findings are of relevance for the growth of any heterostructure combining oxides with different crystal symmetry and may thus facilitate the search for novel oxide heterointerfaces.

  12. Cascaded exciton energy transfer in a monolayer semiconductor lateral heterostructure assisted by surface plasmon polariton.

    PubMed

    Shi, Jinwei; Lin, Meng-Hsien; Chen, I-Tung; Mohammadi Estakhri, Nasim; Zhang, Xin-Quan; Wang, Yanrong; Chen, Hung-Ying; Chen, Chun-An; Shih, Chih-Kang; Alù, Andrea; Li, Xiaoqin; Lee, Yi-Hsien; Gwo, Shangjr

    2017-06-26

    Atomically thin lateral heterostructures based on transition metal dichalcogenides have recently been demonstrated. In monolayer transition metal dichalcogenides, exciton energy transfer is typically limited to a short range (~1 μm), and additional losses may be incurred at the interfacial regions of a lateral heterostructure. To overcome these challenges, here we experimentally implement a planar metal-oxide-semiconductor structure by placing a WS2/MoS2 monolayer heterostructure on top of an Al2O3-capped Ag single-crystalline plate. We find that the exciton energy transfer range can be extended to tens of microns in the hybrid structure mediated by an exciton-surface plasmon polariton-exciton conversion mechanism, allowing cascaded exciton energy transfer from one transition metal dichalcogenides region supporting high-energy exciton resonance to a different transition metal dichalcogenides region in the lateral heterostructure with low-energy exciton resonance. The realized planar hybrid structure combines two-dimensional light-emitting materials with planar plasmonic waveguides and offers great potential for developing integrated photonic and plasmonic devices.Exciton energy transfer in monolayer transition metal dichalcogenides is limited to short distances. Here, Shi et al. fabricate a planar metal-oxide-semiconductor structure and show that exciton energy transfer can be extended to tens of microns, mediated by an exciton-surface-plasmon-polariton-exciton conversion mechanism.

  13. Reactor process using metal oxide ceramic membranes

    DOEpatents

    Anderson, Marc A.

    1994-01-01

    A reaction vessel for use in photoelectrochemical reactions includes as its reactive surface a metal oxide porous ceramic membrane of a catalytic metal such as titanium. The reaction vessel includes a light source and a counter electrode. A provision for applying an electrical bias between the membrane and the counter electrode permits the Fermi levels of potential reaction to be favored so that certain reactions may be favored in the vessel. The electrical biasing is also useful for the cleaning of the catalytic membrane. Also disclosed is a method regenerating a porous metal oxide ceramic membrane used in a photoelectrochemical catalytic process by periodically removing the reactants and regenerating the membrane using a variety of chemical, thermal, and electrical techniques.

  14. Reactor process using metal oxide ceramic membranes

    DOEpatents

    Anderson, M.A.

    1994-05-03

    A reaction vessel for use in photoelectrochemical reactions includes as its reactive surface a metal oxide porous ceramic membrane of a catalytic metal such as titanium. The reaction vessel includes a light source and a counter electrode. A provision for applying an electrical bias between the membrane and the counter electrode permits the Fermi levels of potential reaction to be favored so that certain reactions may be favored in the vessel. The electrical biasing is also useful for the cleaning of the catalytic membrane. Also disclosed is a method regenerating a porous metal oxide ceramic membrane used in a photoelectrochemical catalytic process by periodically removing the reactants and regenerating the membrane using a variety of chemical, thermal, and electrical techniques. 2 figures.

  15. Detection of microwave phase variation in nanometre-scale magnetic heterostructures.

    PubMed

    Bailey, W E; Cheng, C; Knut, R; Karis, O; Auffret, S; Zohar, S; Keavney, D; Warnicke, P; Lee, J-S; Arena, D A

    2013-01-01

    The internal phase profile of electromagnetic radiation determines many functional properties of metal, oxide or semiconductor heterostructures. In magnetic heterostructures, emerging spin electronic phenomena depend strongly upon the phase profile of the magnetic field H at gigahertz frequencies. Here we demonstrate nanometre-scale, layer-resolved detection of electromagnetic phase through the radio frequency magnetic field H(rf) in magnetic heterostructures. Time-resolved X-ray magnetic circular dichroism reveals the local phase of the radio frequency magnetic field acting on individual magnetizations M(i) through the susceptibility as M = χH(rf). An unexpectedly large phase variation, ~40°, is detected across spin-valve trilayers driven at 3 GHz. The results have implications for the identification of novel effects in spintronics and suggest general possibilities for electromagnetic-phase profile measurement in heterostructures.

  16. Oscillatory Noncollinear Magnetism Induced by Interfacial Charge Transfer in Superlattices Composed of Metallic Oxides

    NASA Astrophysics Data System (ADS)

    Hoffman, Jason D.; Kirby, Brian J.; Kwon, Jihwan; Fabbris, Gilberto; Meyers, D.; Freeland, John W.; Martin, Ivar; Heinonen, Olle G.; Steadman, Paul; Zhou, Hua; Schlepütz, Christian M.; Dean, Mark P. M.; te Velthuis, Suzanne G. E.; Zuo, Jian-Min; Bhattacharya, Anand

    2016-10-01

    Interfaces between correlated complex oxides are promising avenues to realize new forms of magnetism that arise as a result of charge transfer, proximity effects, and locally broken symmetries. We report on the discovery of a noncollinear magnetic structure in superlattices of the ferromagnetic metallic oxide La2 /3Sr1 /3MnO3 (LSMO) and the correlated metal LaNiO3 (LNO). The exchange interaction between LSMO layers is mediated by the intervening LNO, such that the angle between the magnetization of neighboring LSMO layers varies in an oscillatory manner with the thickness of the LNO layer. The magnetic field, temperature, and spacer thickness dependence of the noncollinear structure are inconsistent with the bilinear and biquadratic interactions that are used to model the magnetic structure in conventional metallic multilayers. A model that couples the LSMO layers to a helical spin state within the LNO fits the observed behavior. We propose that the spin-helix results from the interaction between a spatially varying spin susceptibility within the LNO and interfacial charge transfer that creates localized Ni2 + states. Our work suggests a new approach to engineering noncollinear spin textures in metallic oxide heterostructures.

  17. Oscillatory noncollinear magnetism induced by interfacial charge transfer in superlattices composed of metallic oxides

    DOE PAGES

    Hoffman, Jason D.; Kirby, Brian J.; Kwon, Jihwan; ...

    2016-11-22

    Interfaces between correlated complex oxides are promising avenues to realize new forms of magnetism that arise as a result of charge transfer, proximity effects, and locally broken symmetries. We report on the discovery of a noncollinear magnetic structure in superlattices of the ferromagnetic metallic oxide La2/3Sr1/3MnO3 (LSMO) and the correlated metal LaNiO3 (LNO). The exchange interaction between LSMO layers is mediated by the intervening LNO, such that the angle between the magnetization of neighboring LSMO layers varies in an oscillatory manner with the thickness of the LNO layer. The magnetic field, temperature, and spacer thickness dependence of the noncollinear structuremore » are inconsistent with the bilinear and biquadratic interactions that are used to model the magnetic structure in conventional metallic multilayers. A model that couples the LSMO layers to a helical spin state within the LNO fits the observed behavior. We propose that the spin-helix results from the interaction between a spatially varying spin susceptibility within the LNO and interfacial charge transfer that creates localized Ni2+ states. In conclusion, our work suggests a new approach to engineering noncollinear spin textures in metallic oxide heterostructures.« less

  18. Kelvin probe imaging of photo-injected electrons in metal oxide nanosheets from metal sulfide quantum dots under remote photochromic coloration

    NASA Astrophysics Data System (ADS)

    Kondo, A.; Yin, G.; Srinivasan, N.; Atarashi, D.; Sakai, E.; Miyauchi, M.

    2015-07-01

    Metal oxide and quantum dot (QD) heterostructures have attracted considerable recent attention as materials for developing efficient solar cells, photocatalysts, and display devices, thus nanoscale imaging of trapped electrons in these heterostructures provides important insight for developing efficient devices. In the present study, Kelvin probe force microscopy (KPFM) of CdS quantum dot (QD)-grafted Cs4W11O362- nanosheets was performed before and after visible-light irradiation. After visible-light excitation of the CdS QDs, the Cs4W11O362- nanosheet surface exhibited a decreased work function in the vicinity of the junction with CdS QDs, even though the Cs4W11O362- nanosheet did not absorb visible light. X-ray photoelectron spectroscopy revealed that W5+ species were formed in the nanosheet after visible-light irradiation. These results demonstrated that excited electrons in the CdS QDs were injected and trapped in the Cs4W11O362- nanosheet to form color centers. Further, the CdS QDs and Cs4W11O362- nanosheet composite films exhibited efficient remote photochromic coloration, which was attributed to the quantum nanostructure of the film. Notably, the responsive wavelength of the material is tunable by adjusting the size of QDs, and the decoloration rate is highly efficient, as the required length for trapped electrons to diffuse into the nanosheet surface is very short owing to its nanoscale thickness. The unique properties of this photochromic device make it suitable for display or memory applications. In addition, the methodology described in the present study for nanoscale imaging is expected to aid in the understanding of electron transport and trapping processes in metal oxide and metal chalcogenide heterostructure, which are crucial phenomena in QD-based solar cells and/or photocatalytic water-splitting systems.Metal oxide and quantum dot (QD) heterostructures have attracted considerable recent attention as materials for developing efficient solar cells

  19. Method for producing nanostructured metal-oxides

    DOEpatents

    Tillotson, Thomas M.; Simpson, Randall L.; Hrubesh, Lawrence W.; Gash, Alexander

    2006-01-17

    A synthetic route for producing nanostructure metal-oxide-based materials using sol-gel processing. This procedure employs the use of stable and inexpensive hydrated-metal inorganic salts and environmentally friendly solvents such as water and ethanol. The synthesis involves the dissolution of the metal salt in a solvent followed by the addition of a proton scavenger, which induces gel formation in a timely manner. Both critical point (supercritical extraction) and atmospheric (low temperature evaporation) drying may be employed to produce monolithic aerogels and xerogels, respectively. Using this method synthesis of metal-oxide nanostructured materials have been carried out using inorganic salts, such as of Fe.sup.3+, Cr.sup.3+, Al.sup.3+, Ga.sup.3+, In.sup.3+, Hf.sup.4+, Sn.sup.4+, Zr.sup.4+, Nb.sup.5+, W.sup.6+, Pr.sup.3+, Er.sup.3+, Nd.sup.3+, Ce.sup.3+, U.sup.3+ and Y.sup.3+. The process is general and nanostructured metal-oxides from the following elements of the periodic table can be made: Groups 2 through 13, part of Group 14 (germanium, tin, lead), part of Group 15 (antimony, bismuth), part of Group 16 (polonium), and the lanthanides and actinides. The sol-gel processing allows for the addition of insoluble materials (e.g., metals or polymers) to the viscous sol, just before gelation, to produce a uniformly distributed nanocomposites upon gelation. As an example, energetic nanocomposites of Fe.sub.xO.sub.y gel with distributed Al metal are readily made. The compositions are stable, safe, and can be readily ignited to thermitic reaction.

  20. Apparatus enables accurate determination of alkali oxides in alkali metals

    NASA Technical Reports Server (NTRS)

    Dupraw, W. A.; Gahn, R. F.; Graab, J. W.; Maple, W. E.; Rosenblum, L.

    1966-01-01

    Evacuated apparatus determines the alkali oxide content of an alkali metal by separating the metal from the oxide by amalgamation with mercury. The apparatus prevents oxygen and moisture from inadvertently entering the system during the sampling and analytical procedure.

  1. Physisorption mechanism in graphene/noble metal (111)/Ni(111) heterostructures: An ab-initio study

    NASA Astrophysics Data System (ADS)

    Moaddeli, Mohammad; Salehi, Hamdollah; Amiri, Peiman

    2016-08-01

    The 3D stacking of various 2D systems is an intelligent way of aiming to overcome the limitations usually faced by 2D systems. We study the adsorption of graphene on noble metal monolayers upon Ni (111) substrate, using density functional theory. The bonding mechanism at noble metal-graphene and noble metal-Ni interfaces is found to be physisorption and chemisorption, respectively. The bonding of graphene to Cu, Ag, and Au (111) monolayers is so weak that the conical shape of the Dirac point is preserved. The doping effects of a substrate lead to a small opening gap for gr/Cu/Ni and gr/Ag/Ni systems. These predictions are in agreement with experimental results. The intercalation of a noble metal monolayer between graphene and Ni (111) substrate changes the magnetic response from Ni surface and causes the formation of a ferrimagnetic system.

  2. Transition metal oxide nanowires synthesized by heating metal substrates

    SciTech Connect

    Yan, Hui; Sun, Yi; He, Lin; Nie, Jia-Cai

    2011-11-15

    Highlights: {center_dot} This paper describes a simple and general method to synthesize 3d metal oxide nanowires. {center_dot} Self-catalysis growth mechanism was proposed to explain the growth of the nanowires. {center_dot} The temperature range for the growth of nanowires was estimated by taking into account the Gibbs free energy of reaction. {center_dot} This synthesis approach could be applied to synthesize other one-dimensional structures, such as FeSe and Bi{sub 2}Te{sub 3} nanowires. -- Abstract: Here we reported a simple method to synthesize transition metal oxide nanowires. Copper oxide (CuO), zinc oxide (ZnO), and cobalt oxide (Co{sub 3}O{sub 4}) nanowires were synthesized by heating the copper, zinc, and cobalt substrates under atmosphere condition. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to analyze the morphology and microstructure of the nanowires. According to our experimental results, self-catalysis growth mechanism was proposed to explain the growth of the nanowires. The temperature window for the growth of nanowires was estimated by taking into account the Gibbs free energy of reaction. The synthesis approach observed in our experiment could be applied to synthesize other one-dimensional structures, such as FeSe and Bi{sub 2}Te{sub 3} nanowires.

  3. High-performance heterostructured cathodes for lithium-ion batteries with a Ni-rich layered oxide core and a Li-rich layered oxide shell

    SciTech Connect

    Oh, Pilgun; Oh, Seung -Min; Li, Wangda; Myeong, Seunjun; Cho, Jaephil; Manthiram, Arumugam

    2016-05-30

    The Ni-rich layered oxides with a Ni content of >0.5 are drawing much attention recently to increase the energy density of lithium-ion batteries. However, the Ni-rich layered oxides suffer from aggressive reaction of the cathode surface with the organic electrolyte at the higher operating voltages, resulting in consequent impedance rise and capacity fade. To overcome this difficulty, we present here a heterostructure composed of a Ni-rich LiNi0.7Co0.15Mn0.15O2 core and a Li-rich Li1.2-xNi0.2Mn0.6O2 shell, incorporating the advantageous features of the structural stability of the core and chemical stability of the shell. With a unique chemical treatment for the activation of the Li2MnO3 phase of the shell, a high capacity is realized with the Li-rich shell material. Aberration-corrected scanning transmission electron microscopy (STEM) provides direct evidence for the formation of surface Li-rich shell layer. Finally, the heterostructure exhibits a high capacity retention of 98% and a discharge- voltage retention of 97% during 100 cycles with a discharge capacity of 190 mA h g-1 (at 2.0–4.5 V under C/3 rate, 1C = 200 mA g-1).

  4. Electroplating lithium transition metal oxides

    PubMed Central

    Zhang, Huigang; Ning, Hailong; Busbee, John; Shen, Zihan; Kiggins, Chadd; Hua, Yuyan; Eaves, Janna; Davis, Jerome; Shi, Tan; Shao, Yu-Tsun; Zuo, Jian-Min; Hong, Xuhao; Chan, Yanbin; Wang, Shuangbao; Wang, Peng; Sun, Pengcheng; Xu, Sheng; Liu, Jinyun; Braun, Paul V.

    2017-01-01

    Materials synthesis often provides opportunities for innovation. We demonstrate a general low-temperature (260°C) molten salt electrodeposition approach to directly electroplate the important lithium-ion (Li-ion) battery cathode materials LiCoO2, LiMn2O4, and Al-doped LiCoO2. The crystallinities and electrochemical capacities of the electroplated oxides are comparable to those of the powders synthesized at much higher temperatures (700° to 1000°C). This new growth method significantly broadens the scope of battery form factors and functionalities, enabling a variety of highly desirable battery properties, including high energy, high power, and unprecedented electrode flexibility. PMID:28508061

  5. Kelvin probe imaging of photo-injected electrons in metal oxide nanosheets from metal sulfide quantum dots under remote photochromic coloration.

    PubMed

    Kondo, A; Yin, G; Srinivasan, N; Atarashi, D; Sakai, E; Miyauchi, M

    2015-08-07

    Metal oxide and quantum dot (QD) heterostructures have attracted considerable recent attention as materials for developing efficient solar cells, photocatalysts, and display devices, thus nanoscale imaging of trapped electrons in these heterostructures provides important insight for developing efficient devices. In the present study, Kelvin probe force microscopy (KPFM) of CdS quantum dot (QD)-grafted Cs4W11O36(2-) nanosheets was performed before and after visible-light irradiation. After visible-light excitation of the CdS QDs, the Cs4W11O36(2-) nanosheet surface exhibited a decreased work function in the vicinity of the junction with CdS QDs, even though the Cs4W11O36(2-) nanosheet did not absorb visible light. X-ray photoelectron spectroscopy revealed that W(5+) species were formed in the nanosheet after visible-light irradiation. These results demonstrated that excited electrons in the CdS QDs were injected and trapped in the Cs4W11O36(2-) nanosheet to form color centers. Further, the CdS QDs and Cs4W11O36(2-) nanosheet composite films exhibited efficient remote photochromic coloration, which was attributed to the quantum nanostructure of the film. Notably, the responsive wavelength of the material is tunable by adjusting the size of QDs, and the decoloration rate is highly efficient, as the required length for trapped electrons to diffuse into the nanosheet surface is very short owing to its nanoscale thickness. The unique properties of this photochromic device make it suitable for display or memory applications. In addition, the methodology described in the present study for nanoscale imaging is expected to aid in the understanding of electron transport and trapping processes in metal oxide and metal chalcogenide heterostructure, which are crucial phenomena in QD-based solar cells and/or photocatalytic water-splitting systems.

  6. 40 CFR 721.4610 - Mixed metal oxides (generic).

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Mixed metal oxides (generic). 721.4610... Substances § 721.4610 Mixed metal oxides (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as mixed metal oxides (PMN...

  7. 40 CFR 721.10500 - Acrylated mixed metal oxides (generic).

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Acrylated mixed metal oxides (generic... Specific Chemical Substances § 721.10500 Acrylated mixed metal oxides (generic). (a) Chemical substance and... mixed metal oxides (PMN P-06-341) is subject to reporting under this section for the significant...

  8. 40 CFR 721.10006 - Mixed metal oxide (generic).

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Mixed metal oxide (generic). 721.10006... Substances § 721.10006 Mixed metal oxide (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as mixed metal oxide (PMN...

  9. 40 CFR 721.5549 - Lithiated metal oxide.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Lithiated metal oxide. 721.5549... Substances § 721.5549 Lithiated metal oxide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as lithiated metal oxide (LiNiO2) (PMN...

  10. 40 CFR 721.10006 - Mixed metal oxide (generic).

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Mixed metal oxide (generic). 721.10006... Substances § 721.10006 Mixed metal oxide (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as mixed metal oxide (PMN...

  11. 40 CFR 721.5549 - Lithiated metal oxide.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Lithiated metal oxide. 721.5549... Substances § 721.5549 Lithiated metal oxide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as lithiated metal oxide (LiNiO2) (PMN...

  12. 40 CFR 721.5549 - Lithiated metal oxide.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Lithiated metal oxide. 721.5549... Substances § 721.5549 Lithiated metal oxide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as lithiated metal oxide (LiNiO2) (PMN...

  13. 40 CFR 721.5549 - Lithiated metal oxide.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Lithiated metal oxide. 721.5549... Substances § 721.5549 Lithiated metal oxide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as lithiated metal oxide (LiNiO2) (PMN...

  14. 40 CFR 721.5548 - Mixed metal oxide (generic).

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Mixed metal oxide (generic). 721.5548... Substances § 721.5548 Mixed metal oxide (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as a mixed metal oxide (PMN P-97-956)...

  15. 40 CFR 721.4610 - Mixed metal oxides (generic).

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Mixed metal oxides (generic). 721.4610... Substances § 721.4610 Mixed metal oxides (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as mixed metal oxides (PMN...

  16. 40 CFR 721.5548 - Mixed metal oxide (generic).

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Mixed metal oxide (generic). 721.5548... Substances § 721.5548 Mixed metal oxide (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as a mixed metal oxide (PMN P-97-956)...

  17. 40 CFR 721.5548 - Mixed metal oxide (generic).

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Mixed metal oxide (generic). 721.5548... Substances § 721.5548 Mixed metal oxide (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as a mixed metal oxide (PMN P-97-956)...

  18. 40 CFR 721.5548 - Mixed metal oxide (generic).

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Mixed metal oxide (generic). 721.5548... Substances § 721.5548 Mixed metal oxide (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as a mixed metal oxide (PMN P-97-956)...

  19. 40 CFR 721.4610 - Mixed metal oxides (generic).

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Mixed metal oxides (generic). 721.4610... Substances § 721.4610 Mixed metal oxides (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as mixed metal oxides (PMN...

  20. 40 CFR 721.10006 - Mixed metal oxide (generic).

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Mixed metal oxide (generic). 721.10006... Substances § 721.10006 Mixed metal oxide (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as mixed metal oxide (PMN...

  1. 40 CFR 721.5549 - Lithiated metal oxide.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Lithiated metal oxide. 721.5549... Substances § 721.5549 Lithiated metal oxide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as lithiated metal oxide (LiNiO2) (PMN...

  2. 40 CFR 721.10006 - Mixed metal oxide (generic).

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Mixed metal oxide (generic). 721.10006... Substances § 721.10006 Mixed metal oxide (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as mixed metal oxide (PMN...

  3. 40 CFR 721.10500 - Acrylated mixed metal oxides (generic).

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Acrylated mixed metal oxides (generic... Specific Chemical Substances § 721.10500 Acrylated mixed metal oxides (generic). (a) Chemical substance and... mixed metal oxides (PMN P-06-341) is subject to reporting under this section for the significant...

  4. 40 CFR 721.5548 - Mixed metal oxide (generic).

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Mixed metal oxide (generic). 721.5548... Substances § 721.5548 Mixed metal oxide (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as a mixed metal oxide (PMN P-97-956)...

  5. 40 CFR 721.4610 - Mixed metal oxides (generic).

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Mixed metal oxides (generic). 721.4610... Substances § 721.4610 Mixed metal oxides (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as mixed metal oxides (PMN...

  6. 40 CFR 721.4610 - Mixed metal oxides (generic).

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Mixed metal oxides (generic). 721.4610... Substances § 721.4610 Mixed metal oxides (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as mixed metal oxides (PMN...

  7. 40 CFR 721.10006 - Mixed metal oxide (generic).

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Mixed metal oxide (generic). 721.10006... Substances § 721.10006 Mixed metal oxide (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as mixed metal oxide (PMN...

  8. Voltage Control of Exchange Bias in a Chromium Oxide Based Thin Film Heterostructure

    NASA Astrophysics Data System (ADS)

    Echtenkamp, Will; Street, Mike; Mahmood, Ather; Binek, Christian

    Controlling magnetism by electrical means is a key challenge in the field of spintronics, and electric control of exchange bias is one of the most promising routes to address this challenge. Isothermal electric control of exchange bias has been achieved near room temperature using bulk, single crystal, magnetoelectric Cr2O3. In this study the electrically-controlled exchange bias is investigated in an all thin film Cr2O3/PdCo exchange bias heterosystem where an MBE grown ferromagnetic and perpendicular anisotropic Pd/Co multilayer has been deposited on a PLD grown (0001) Cr2O3 thin film. Prototype devices are fabricated using lithography techniques. Using a process of magnetoelectric annealing, voltage control of exchange bias in Cr2O3 heterostructures is demonstrated with significant implications for scalability of ultra-low power memory and logical devices. In addition, the dependence of the exchange bias on the applied electric and magnetic fields are independently studied at 300K and isothermal voltage-controlled switching is investigated. This project was supported by SRC through CNFD, an SRC-NRI Center, by C-SPIN, part of STARnet, and by the NSF through MRSEC DMR-0820521.

  9. Spin-polarized Wide Electron Slabs in Functionally Graded Polar Oxide Heterostructures

    PubMed Central

    Ye, Jiandong; Ter Lim, Sze; Bosman, Michel; Gu, Shulin; Zheng, Youdou; Tan, Hark Hoe; Jagadish, Chennupati; Sun, Xiaowei; Teo, Kie Leong

    2012-01-01

    We report on the high mobility wide electron slabs with enhanced correlation effects by tailoring the polarization effects in a functionally graded ZnMgO/ZnO heterostructures. The characteristics of three-dimensional (3D) spreading electrons are evidenced by the capacitance-voltage profiling and the quantization of 3D Fermi surface in magneto-transport measurements. Despite the weak spin-orbit interaction, such electron slabs are spin-polarized with a large zero-field spin splitting energy, which is induced by the carrier-mediated ferromagnetism. Our results suggest that the vast majority of electrons are localized at the surface magnetic moment which does not allow spin manipulations, and only in the region visited by the itinerant carriers that the ferromagnetic exchange interactions via coupling to the surface local moments contribute to the spin transport. The host ferromagnetism is likely due to the formation of Zn cation vacancies on the surface regime induced by the stabilization mechanism and strain-relaxation in ZnMgO polar ionic surface. PMID:22833785

  10. Spin-polarized wide electron slabs in functionally graded polar oxide heterostructures.

    PubMed

    Ye, Jiandong; Ter Lim, Sze; Bosman, Michel; Gu, Shulin; Zheng, Youdou; Tan, Hark Hoe; Jagadish, Chennupati; Sun, Xiaowei; Teo, Kie Leong

    2012-01-01

    We report on the high mobility wide electron slabs with enhanced correlation effects by tailoring the polarization effects in a functionally graded ZnMgO/ZnO heterostructures. The characteristics of three-dimensional (3D) spreading electrons are evidenced by the capacitance-voltage profiling and the quantization of 3D Fermi surface in magneto-transport measurements. Despite the weak spin-orbit interaction, such electron slabs are spin-polarized with a large zero-field spin splitting energy, which is induced by the carrier-mediated ferromagnetism. Our results suggest that the vast majority of electrons are localized at the surface magnetic moment which does not allow spin manipulations, and only in the region visited by the itinerant carriers that the ferromagnetic exchange interactions via coupling to the surface local moments contribute to the spin transport. The host ferromagnetism is likely due to the formation of Zn cation vacancies on the surface regime induced by the stabilization mechanism and strain-relaxation in ZnMgO polar ionic surface.

  11. Polymorphism Control in Nanostructured Metal Oxides

    NASA Astrophysics Data System (ADS)

    Sood, Shantanu

    Polymorphic phase transformations are common to all nanocrystalline binary metal oxides. The polymorphic nature of such metal oxides makes available a large number of phases with differing crystal structures, each stable under certain conditions of temperature, pressure, and/or particle size. These different crystal structures translate to unique physical and chemical properties for each structural class of polymorphs. Thus predicting when polymorphic phase transitions are likely to occur becomes important to the synthesis of stable functional materials with desired properties. Theoretical calculations using a heuristic approach have resulted in an accurate estimation of the critical particle size predicting metastable to stable phase transitions. This formula is applied to different case studies: for anatase to rutile titania; gamma-Alumina to alpha-Alumina; and tetragonal to monoclinic zirconia. The theoretical values calculated have been seen to be very close to the experimental results from the literature. Manifestation of the effect of phase transitions in nanostructured metal oxides was provided in the study of metastable to stable phase transitions in WO3. Nanowires of tungsten trioxide have been synthesized in-situ inside an electron microscope. Such structure of tungsten trioxide result due to a metastable to stable phase transformation, from the cubic to the monoclinic phase. The transformation is massive and complete. The structures formed are unique one-dimensional nanowires. Such a method can be scaled inside any equipment equipped with an electron gun, for example lithography systems either using STEM or E-beam lithography. Another study on nanowire formation in binary metal oxides involved the synthesis of stable orthorhombic MoO3 by means of blend electrospinning. Both a traditional single jet electrospinning set up and a novel high-throughput process to get high aspect ratio nanowires. The latter is a jet-controlled and flow controlled

  12. Reactor vessel using metal oxide ceramic membranes

    DOEpatents

    Anderson, Marc A.; Zeltner, Walter A.

    1992-08-11

    A reaction vessel for use in photoelectrochemical reactions includes as its reactive surface a metal oxide porous ceramic membrane of a catalytic metal such as titanium. The reaction vessel includes a light source and a counter electrode. A provision for applying an electrical bias between the membrane and the counter electrode permits the Fermi levels of potential reaction to be favored so that certain reactions may be favored in the vessel. The electrical biasing is also useful for the cleaning of the catalytic membrane.

  13. Spontaneous Formation of a Superconductor-Topological Insulator-Normal Metal Layered Heterostructure.

    PubMed

    Wang, Yu-Qi; Wu, Xu; Wang, Ye-Liang; Shao, Yan; Lei, Tao; Wang, Jia-Ou; Zhu, Shi-Yu; Guo, Haiming; Zhao, Ling-Xiao; Chen, Gen-Fu; Nie, Simin; Weng, Hong-Ming; Ibrahim, Kurash; Dai, Xi; Fang, Zhong; Gao, Hong-Jun

    2016-07-01

    2D materials with heterolayered structures beyond graphene are explored. A theoretically predicted superconductor-topological insulator-normal metal heterolayered structure is realized experimentally. The generated hybrid structure HfTe3 /HfTe5 /Hf has potential applications in both quantum-spin Hall effect-based and Majorana-based devices.

  14. In-situ synthesis of highly efficient visible light driven stannic oxide/graphitic carbon nitride heterostructured photocatalysts.

    PubMed

    Tao, Binglin; Yan, Zifeng

    2016-10-15

    Novel and efficient visible-light-driven stannic oxide/graphitic carbon nitride heterostructured photocatalysts are prepared via a simple in-situ solvothermal method. Characterization results demonstrate that there exist strong interactions between SnO2 nanoparticles and g-C3N4 matrix, which indicates the formation of SnO2/g-C3N4 heterojunction. The as-synthesized SnO2/g-C3N4 composite exhibits improved efficiency for photodegradation of rhodamine B in aqueous solutions, with an apparent rate constant 6.5 times higher than that of commercial TiO2 (Degussa P25). The enhanced photocatalytic activity is attributed to synergistic effect between SnO2 and g-C3N4, resulting in effective interfacial charge transfer and prolonged charge-hole separation time. Moreover, SnO2/g-C3N4 composite photocatalysts possess excellent durability and stability after 6 recycling runs, and a possible photocatalytic mechanism is also proposed. This research highlights the promising applications of two dimensional g-C3N4 based composite photocatalysts in the field of waste water disposal and environmental remediation. Copyright © 2016 Elsevier Inc. All rights reserved.

  15. Strongly enhanced Rashba splittings in an oxide heterostructure: A tantalate monolayer on BaHfO3

    SciTech Connect

    Kim, Minsung; Ihm, Jisoon; Chung, Suk Bum

    2016-09-22

    In the two-dimensional electron gas emerging at the transition metal oxide surface and interface, various exotic electronic ordering and topological phases can become experimentally more accessible with the stronger Rashba spin-orbit interaction. Here, we present a promising route to realize significant Rashba-type band splitting using a thin film heterostructure. Based on first-principles methods and analytic model analyses, a tantalate monolayer on BaHfO3 is shown to host two-dimensional bands originating from Ta t2g states with strong Rashba spin splittings, nearly 10% of the bandwidth, at both the band minima and saddle points. An important factor in this enhanced splitting is the significant t2g–eg interband coupling, which can generically arise when the inversion symmetry is maximally broken due to the strong confinement of the 2DEG on a transition metal oxide surface. Here, our results could be useful in realizing topological superconductivity at oxide surfaces.

  16. Strongly enhanced Rashba splittings in an oxide heterostructure: A tantalate monolayer on BaHfO3

    SciTech Connect

    Kim, Minsung; Ihm, Jisoon; Chung, Suk Bum

    2016-09-22

    In the two-dimensional electron gas emerging at the transition metal oxide surface and interface, various exotic electronic ordering and topological phases can become experimentally more accessible with the stronger Rashba spin-orbit interaction. Here, we present a promising route to realize significant Rashba-type band splitting using a thin film heterostructure. Based on first-principles methods and analytic model analyses, a tantalate monolayer on BaHfO3 is shown to host two-dimensional bands originating from Ta t2g states with strong Rashba spin splittings, nearly 10% of the bandwidth, at both the band minima and saddle points. An important factor in this enhanced splitting is the significant t2g–eg interband coupling, which can generically arise when the inversion symmetry is maximally broken due to the strong confinement of the 2DEG on a transition metal oxide surface. Here, our results could be useful in realizing topological superconductivity at oxide surfaces.

  17. Topological crystalline insulators in transition metal oxides.

    PubMed

    Kargarian, Mehdi; Fiete, Gregory A

    2013-04-12

    Topological crystalline insulators possess electronic states protected by crystal symmetries, rather than time-reversal symmetry. We show that the transition metal oxides with heavy transition metals are able to support nontrivial band topology resulting from mirror symmetry of the lattice. As an example, we consider pyrochlore oxides of the form A2M2O7. As a function of spin-orbit coupling strength, we find two Z2 topological insulator phases can be distinguished from each other by their mirror Chern numbers, indicating a different topological crystalline insulators. We also derive an effective k·p Hamiltonian, similar to the model introduced for Pb(1-x)Sn(x)Te, and discuss the effect of an on-site Hubbard interaction on the topological crystalline insulator phase using slave-rotor mean-field theory, which predicts new classes of topological quantum spin liquids.

  18. Recent Progress in Self‐Supported Metal Oxide Nanoarray Electrodes for Advanced Lithium‐Ion Batteries

    PubMed Central

    Zhang, Feng

    2016-01-01

    The rational design and fabrication of electrode materials with desirable architectures and optimized properties has been demonstrated to be an effective approach towards high‐performance lithium‐ion batteries (LIBs). Although nanostructured metal oxide electrodes with high specific capacity have been regarded as the most promising alternatives for replacing commercial electrodes in LIBs, their further developments are still faced with several challenges such as poor cycling stability and unsatisfying rate performance. As a new class of binder‐free electrodes for LIBs, self‐supported metal oxide nanoarray electrodes have many advantageous features in terms of high specific surface area, fast electron transport, improved charge transfer efficiency, and free space for alleviating volume expansion and preventing severe aggregation, holding great potential to solve the mentioned problems. This review highlights the recent progress in the utilization of self‐supported metal oxide nanoarrays grown on 2D planar and 3D porous substrates, such as 1D and 2D nanostructure arrays, hierarchical nanostructure arrays, and heterostructured nanoarrays, as anodes and cathodes for advanced LIBs. Furthermore, the potential applications of these binder‐free nanoarray electrodes for practical LIBs in full‐cell configuration are outlined. Finally, the future prospects of these self‐supported nanoarray electrodes are discussed. PMID:27711259

  19. Optical sensors based on metal oxide nanowires for UV/IR detection

    NASA Astrophysics Data System (ADS)

    Pau, Jose Luis; García Nuñez, Carlos; García Marín, Antonio; Ruiz, Eduardo; Piqueras, Juan

    2013-05-01

    Metal oxide nanowires (NWs) present high stability and excellent optical, electrical and mechanical properties. Their synthesis is cost-effective since they can be produced by means of conventional ovens using vapor phase transport or direct metal oxidation. In this work, n-type ZnO and p-type CuO NWs are deposited on pre-patterned electrodes of Aldoped ZnO (AZO) by dielectrophoresis. Performance of devices fabricated from single and multiple NWs are compared. Highly selective UV detection is demonstrated in n-type ZnO NW photoconductors with high external gains in the 0.09-1×108 range and slow time responses, both effects induced by surface effects. In contrast, n-p-n AZO/ CuO NW/AZO heterostructures show lower gains but faster optical responses, mainly limited by device parasitics. Given the CuO bandgap (1.2 eV), the results are quite promising for the development of hybrid metal oxide detection structures in imaging and photovoltaic applications.

  20. Recent Progress in Self-Supported Metal Oxide Nanoarray Electrodes for Advanced Lithium-Ion Batteries.

    PubMed

    Zhang, Feng; Qi, Limin

    2016-09-01

    The rational design and fabrication of electrode materials with desirable architectures and optimized properties has been demonstrated to be an effective approach towards high-performance lithium-ion batteries (LIBs). Although nanostructured metal oxide electrodes with high specific capacity have been regarded as the most promising alternatives for replacing commercial electrodes in LIBs, their further developments are still faced with several challenges such as poor cycling stability and unsatisfying rate performance. As a new class of binder-free electrodes for LIBs, self-supported metal oxide nanoarray electrodes have many advantageous features in terms of high specific surface area, fast electron transport, improved charge transfer efficiency, and free space for alleviating volume expansion and preventing severe aggregation, holding great potential to solve the mentioned problems. This review highlights the recent progress in the utilization of self-supported metal oxide nanoarrays grown on 2D planar and 3D porous substrates, such as 1D and 2D nanostructure arrays, hierarchical nanostructure arrays, and heterostructured nanoarrays, as anodes and cathodes for advanced LIBs. Furthermore, the potential applications of these binder-free nanoarray electrodes for practical LIBs in full-cell configuration are outlined. Finally, the future prospects of these self-supported nanoarray electrodes are discussed.

  1. Assembly and Photocarrier Dynamics of Heterostructured Nanocomposite Photoanodes from Multicomponent Colloidal Nanocrystals.

    PubMed

    Loiudice, Anna; Cooper, Jason K; Hess, Lucas H; Mattox, Tracy M; Sharp, Ian D; Buonsanti, R

    2015-11-11

    Multicomponent oxides and their heterostructures are rapidly emerging as promising light absorbers to drive oxidative chemistry. To fully exploit their functionality, precise tuning of their composition and structure is crucial. Here, we report a novel solution-based route to nanostructured bismuth vanadate (BiVO4) that facilitates the assembly of BiVO4/metal oxide (TiO2, WO3, and Al2O3) nanocomposites in which the morphology of the metal oxide building blocks is finely tailored. The combination of transient absorption spectroscopy-spanning from picoseconds to second time scales-and photoelectrochemical measurements reveals that the achieved structural tunability is key to understanding and directing charge separation, transport, and efficiency in these complex oxide heterostructured films.

  2. NMR in Copper-Oxide Metals

    SciTech Connect

    Varma, C.M.

    1996-10-01

    The anomalous part of the NMR relaxation rate of copper nuclei in the normal state of copper-oxide metals is calculated using the orbital magnetic parts of the fluctuations derived in a recent theory to explain the long wavelength transport anomalies. Oxygen and yttrium reside on lattice sites at which the anomalous contribution is absent at all hole densities. The frequency, momentum dependence, and the form factor of the fluctuations is predicted. {copyright} {ital 1996 The American Physical Society.}

  3. Metal-insulator-semiconductor heterostructures for plasmonic hot-carrier optoelectronics.

    PubMed

    García de Arquer, F Pelayo; Konstantatos, Gerasimos

    2015-06-01

    Plasmonic hot-electron devices are attractive candidates for light-energy harvesting and photodetection applications. For solid state devices, the most compact and straightforward architecture is the metal-semiconductor Schottky junction. However convenient, this structure introduces limitations such as the elevated dark current associated to thermionic emission, or constraints for device design due to the finite choice of materials. In this work we theoretically consider the metal-insulator-semiconductor heterojunction as a candidate for plasmonic hot-carrier photodetection and solar cells. The presence of the insulating layer can significantly reduce the dark current, resulting in increased device performance with predicted solar power conversion efficiencies up to 9%. For photodetection, the sensitivity can be extended well into the infrared by a judicious choice of the insulating layer, with up to 300-fold expected enhancement in detectivity.

  4. Metal oxide nanoparticles with low toxicity.

    PubMed

    Ng, Alan Man Ching; Guo, Mu Yao; Leung, Yu Hang; Chan, Charis M N; Wong, Stella W Y; Yung, Mana M N; Ma, Angel P Y; Djurišić, Aleksandra B; Leung, Frederick C C; Leung, Kenneth M Y; Chan, Wai Kin; Lee, Hung Kay

    2015-10-01

    A number of different nanomaterials produced and incorporated into various products are rising. However, their environmental hazards are frequently unknown. Here we consider three different metal oxide compounds (SnO2, In2O3, and Al2O3), which have not been extensively studied and are expected to have low toxicity. This study aimed to comprehensively characterize the physicochemical properties of these nanomaterials and investigate their toxicity on bacteria (Escherichia coli) under UV illumination and in the dark, as well as on a marine diatom (Skeletonema costatum) under ambient illumination/dark (16-8h) cycles. The material properties responsible for their low toxicity have been identified based on comprehensive experimental characterizations and comparison to a metal oxide exhibiting significant toxicity under illumination (anatase TiO2). The metal oxide materials investigated exhibited significant difference in surface properties and interaction with the living organisms. In order for a material to exhibit significant toxicity, it needs to be able to both form a stable suspension in the culture medium and to interact with the cell walls of the test organism. Our results indicated that the observed low toxicities of the three nanomaterials could be attributed to the limited interaction between the nanoparticles and cell walls of the test organisms. This could occur either due to the lack of significant attachment between nanoparticles and cell walls, or due to their tendency to aggregate in solution. Copyright © 2015 Elsevier B.V. All rights reserved.

  5. Reconfigurable van der Waals Heterostructured Devices with Metal-Insulator Transition.

    PubMed

    Heo, Jinseong; Jeong, Heejeong; Cho, Yeonchoo; Lee, Jaeho; Lee, Kiyoung; Nam, Seunggeol; Lee, Eun-Kyu; Lee, Sangyeob; Lee, Hyangsook; Hwang, Sungwoo; Park, Seongjun

    2016-11-09

    Atomically thin two-dimensional (2D) materials range from semimetallic graphene to insulating hexagonal boron nitride to semiconducting transition-metal dichalcogenides. Recently, metal-insulator-semiconductor field effect transistors built from these 2D elements were studied for flexible and transparent electronics. However, to induce ambipolar characteristics for alternative power-efficient circuitry, ion-gel gating is often employed for high capacitive coupling, limiting stable operation at ambient conditions. Here, we report reconfigurable MoTe2 optoelectronic transistors with all 2D components, where the device can be reconfigured by both drain and gate voltages. Eight different configurations for each fixed voltage are spatially resolved by scanning photocurrent microscopy. In addition, metal-insulator transitions are observed in both electron and hole carriers under 2 V due to strong Coulomb interaction in the system. Furthermore, the vertical tunneling photocurrent through multiple van der Waals layers between the gate and source contacts is measured. Our reconfigurable devices offer potential building blocks for system-on-a-chip optoelectronics.

  6. Method for producing metal oxide aerogels

    DOEpatents

    Tillotson, Thomas M.; Poco, John F.; Hrubesh, Lawrence W.; Thomas, Ian M.

    1995-01-01

    A two-step hydrolysis-condensation method was developed to form metal oxide aerogels of any density, including densities of less than 0.003g/cm.sup.3 and greater than 0.27g/cm.sup.3. High purity metal alkoxide is reacted with water, alcohol solvent, and an additive to form a partially condensed metal intermediate. All solvent and reaction-generated alcohol is removed, and the intermediate is diluted with a nonalcoholic solvent. The intermediate can be stored for future use to make aerogels of any density. The aerogels are formed by reacting the intermediate with water, nonalcoholic solvent, and a catalyst, and extracting the nonalcoholic solvent directly. The resulting monolithic aerogels are hydrophobic and stable under atmospheric conditions, and exhibit good optical transparency, high clarity, and homogeneity. The aerogels have high thermal insulation capacity, high porosity, mechanical strength and stability, and require shorter gelation times than aerogels formed by conventional methods.

  7. Method for producing metal oxide aerogels

    DOEpatents

    Tillotson, T.M.; Poco, J.F.; Hrubesh, L.W.; Thomas, I.M.

    1995-04-25

    A two-step hydrolysis-condensation method was developed to form metal oxide aerogels of any density, including densities of less than 0.003g/cm{sup 3} and greater than 0.27g/cm{sup 3}. High purity metal alkoxide is reacted with water, alcohol solvent, and an additive to form a partially condensed metal intermediate. All solvent and reaction-generated alcohol is removed, and the intermediate is diluted with a nonalcoholic solvent. The intermediate can be stored for future use to make aerogels of any density. The aerogels are formed by reacting the intermediate with water, nonalcoholic solvent, and a catalyst, and extracting the nonalcoholic solvent directly. The resulting monolithic aerogels are hydrophobic and stable under atmospheric conditions, and exhibit good optical transparency, high clarity, and homogeneity. The aerogels have high thermal insulation capacity, high porosity, mechanical strength and stability, and require shorter gelation times than aerogels formed by conventional methods. 8 figs.

  8. Trilayer TMDC Heterostructures for MOSFETs and Nanobiosensors

    NASA Astrophysics Data System (ADS)

    Datta, Kanak; Shadman, Abir; Rahman, Ehsanur; Khosru, Quazi D. M.

    2017-02-01

    Two dimensional materials such as transition metal dichalcogenides (TMDC) and their bi-layer/tri-layer heterostructures have become the focus of intense research and investigation in recent years due to their promising applications in electronics and optoelectronics. In this work, we have explored device level performance of trilayer TMDC heterostructure (MoS2/MX2/MoS2; M = Mo or, W and X = S or, Se) metal oxide semiconductor field effect transistors (MOSFETs) in the quantum ballistic regime. Our simulation shows that device `on' current can be improved by inserting a WS2 monolayer between two MoS2 monolayers. Application of biaxial tensile strain reveals a reduction in drain current which can be attributed to the lowering of carrier effective mass with increased tensile strain. In addition, it is found that gate underlap geometry improves electrostatic device performance by improving sub-threshold swing. However, increase in channel resistance reduces drain current. Besides exploring the prospect of these materials in device performance, novel trilayer TMDC heterostructure double gate field effect transistors (FETs) are proposed for sensing Nano biomolecules as well as for pH sensing. Bottom gate operation ensures these FETs operating beyond Nernst limit of 59 mV/pH. Simulation results found in this work reveal that scaling of bottom gate oxide results in better sensitivity while top oxide scaling exhibits an opposite trend. It is also found that, for identical operating conditions, proposed TMDC FET pH sensors show super-Nernst sensitivity indicating these materials as potential candidates in implementing such sensor. Besides pH sensing, all these materials show high sensitivity in the sub-threshold region as a channel material in nanobiosensor while MoS2/WS2/MoS2 FET shows the least sensitivity among them.

  9. Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors

    NASA Astrophysics Data System (ADS)

    Liu, Huan; Cheng, Aijie; Lin, Zhaojun; Cui, Peng; Liu, Yan; Fu, Chen; Lv, Yuanjie; Feng, Zhihong; Luan, Chongbiao

    2017-03-01

    Using measured capacitance-voltage and current-voltage curves for the AlGaN/GaN heterostructure field-effect transistors with different source-drain spacing, the electron mobility under the gate region was obtained. By comparing mobility variation and analyzing polarization charge distribution, it is found that with device scaling, the effect of the diffused Ohmic contact metal atoms on the electron mobility is enhanced. Then, a theoretical calculation related to different scattering mechanisms was adopted and it was verified this enhanced effect is due to the enhanced polarization Coulomb field (PCF) scattering.

  10. Hydrous metal oxide catalysts for oxidation of hydrocarbons

    SciTech Connect

    Miller, J.E.; Dosch, R.G.; McLaughlin, L.I.

    1993-07-01

    This report describes work performed at Sandia under a CRADA with Shell Development of Houston, Texas aimed at developing hydrous metal oxide (HMO) catalysts for oxidation of hydrocarbons. Autoxidation as well as selective oxidation of 1-octene was studied in the presence of HMO catalysts based on known oxidation catalysts. The desired reactions were the conversion of olefin to epoxides, alcohols, and ketones, HMOs seem to inhibit autoxidation reactions, perhaps by reacting with peroxides or radicals. Attempts to use HMOs and metal loaded HMOs as epoxidation catalysts were unsuccessful, although their utility for this reaction was not entirely ruled out. Likewise, alcohol formation from olefins in the presence of HMO catalysts was not achieved. However, this work led to the discovery that acidified HMOs can lead to carbocation reactions of hydrocarbons such as cracking. An HMO catalyst containing Rh and Cu that promotes the reaction of {alpha}-olefins with oxygen to form methyl ketones was identified. Although the activity of the catalyst is relatively low and isomerization reactions of the olefin simultaneously occur, results indicate that these problems may be addressed by eliminating mass transfer limitations. Other suggestions for improving the catalyst are also made. 57 refs.

  11. Fabrication of quantum dots in undoped Si/Si{sub 0.8}Ge{sub 0.2} heterostructures using a single metal-gate layer

    SciTech Connect

    Lu, T. M. Gamble, J. K.; Muller, R. P.; Nielsen, E.; Bethke, D.; Ten Eyck, G. A.; Pluym, T.; Wendt, J. R.; Dominguez, J.; Lilly, M. P.; Carroll, M. S.; Wanke, M. C.

    2016-08-29

    Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for their potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30%. Here, we report the fabrication and low-temperature characterization of quantum dots in the Si/Si{sub 0.8}Ge{sub 0.2} heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 μm increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratio used here leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. The device uses only a single metal-gate layer, greatly simplifying device design and fabrication.

  12. Fabrication of quantum dots in undoped Si/Si0.8Ge0.2 heterostructures using a single metal-gate layer

    DOE PAGES

    Lu, T. M.; Gamble, J. K.; Muller, R. P.; ...

    2016-08-01

    Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for their potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30%. Here, we report the fabrication and low-temperature characterization of quantum dots in the Si/Si0.8Ge0.2 heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 μm increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratio used heremore » leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. Furthermore, the device uses only a single metal-gate layer, greatly simplifying device design and fabrication.« less

  13. Impact dynamics of oxidized liquid metal drops

    NASA Astrophysics Data System (ADS)

    Xu, Qin; Brown, Eric; Jaeger, Heinrich M.

    2013-04-01

    With exposure to air, many liquid metals spontaneously generate an oxide layer on their surface. In oscillatory rheological tests, this skin is found to introduce a yield stress that typically dominates the elastic response but can be tuned by exposing the metal to hydrochloric acid solutions of different concentration. We systematically studied the normal impact of eutectic gallium-indium (eGaIn) drops under different oxidation conditions and show how this leads to two different dynamical regimes. At low impact velocity (or low Weber number), eGaIn droplets display strong recoil and rebound from the impacted surface when the oxide layer is removed. In addition, the degree of drop deformation or spreading during impact is controlled by the oxide skin. We show that the scaling law known from ordinary liquids for the maximum spreading radius as a function of impact velocity can still be applied to the case of oxidized eGaIn if an effective Weber number We is employed that uses an effective surface tension factoring in the yield stress. In contrast, no influence on spreading from different oxidations conditions is observed for high impact velocity. This suggests that the initial kinetic energy is mostly damped by bulk viscous dissipation. Results from both regimes can be collapsed in an impact phase diagram controlled by two variables, the maximum spreading factor Pm=R0/Rm, given by the ratio of initial to maximum drop radius, and the impact number K=We/Re4/5, which scales with the effective Weber number We as well as the Reynolds number Re. The data exhibit a transition from capillary to viscous behavior at a critical impact number Kc≈0.1.

  14. Interface control by chemical and dimensional matching in an oxide heterostructure

    NASA Astrophysics Data System (ADS)

    O'Sullivan, Marita; Hadermann, Joke; Dyer, Matthew S.; Turner, Stuart; Alaria, Jonathan; Manning, Troy D.; Abakumov, Artem M.; Claridge, John B.; Rosseinsky, Matthew J.

    2016-04-01

    Interfaces between different materials underpin both new scientific phenomena, such as the emergent behaviour at oxide interfaces, and key technologies, such as that of the transistor. Control of the interfaces between materials with the same crystal structures but different chemical compositions is possible in many materials classes, but less progress has been made for oxide materials with different crystal structures. We show that dynamical self-organization during growth can create a coherent interface between the perovskite and fluorite oxide structures, which are based on different structural motifs, if an appropriate choice of cations is made to enable this restructuring. The integration of calculation with experimental observation reveals that the interface differs from both the bulk components and identifies the chemical bonding requirements to connect distinct oxide structures.

  15. Method for inhibiting oxidation of metal sulfide-containing material

    DOEpatents

    Elsetinow, Alicia; Borda, Michael J.; Schoonen, Martin A.; Strongin, Daniel R.

    2006-12-26

    The present invention provides means for inhibiting the oxidation of a metal sulfide-containing material, such as ore mine waste rock or metal sulfide taiulings, by coating the metal sulfide-containing material with an oxidation-inhibiting two-tail lipid coating (12) thereon, thereby inhibiting oxidation of the metal sulfide-containing material in acid mine drainage conditions. The lipids may be selected from phospholipids, sphingolipids, glycolipids and combinations thereof.

  16. Structural and magnetic properties of magnetoelectric oxide heterostructures deposited by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Sterbinsky, George Evan

    There is considerable interest in incorporating magnetic materials into electronic devices to achieve new functions such as nonvolatile memories. Electric field control of magnetism is of much interest for new low power electronic devices because it eliminates the need to apply magnetic fields. One approach to achieving electrical control of magnetism is to exploit magnetoelastic effects in composites of ferromagnetic and ferroelectric materials. Application of an electric field to the composite will induce a strain through the piezo-electric effect, and the strain will alter the magnetization of the ferromagnetic constituent through the magnetoelastic effect. In this work, we examine the relationships between growth, strain, and magnetic properties of epitaxial ferrimagnetic Fe3O4 (magnetite) and ferroelectric BaTiO3 thin film heterostructures. We find that altering the strain state of a magnetite layer deposited on a BaTiO3 substrate has a profound effect on its magnetization. Here, we demonstrate the interaction between strain and magnetization is mediated by magnetic anisotropy and the magnetic domains structure of the films. Epitaxial magnetite films were deposited on MgO, BaTiO3, and SrTiO3 substrates by molecular beam epitaxy between temperatures of 573 and 723 K. Examination of the morphologies of Fe3O 4 films indicates that island growth is favored. Films exhibit in-plane magnetic isotropy and reduced saturation magnetizations with respect to the bulk material, as demonstrated by superconducting quantum interference device magnetometry. Magnetic hysteresis measurements suggest that these differences originate from antiphase boundary defects within the films. The strain in magnetite films deposited on BaTiO3 single crystal substrates was measured by x-ray diffraction. Measurements reveal a dependence of magnetization (M) on strain (epsilon) with discontinuities in magnetization versus temperature curves resulting from changes in the domain structure of the

  17. Reduced-graphene-oxide-wrapped BiOI-AgI heterostructured nanocomposite as a high-performance photocatalyst for dye degradation under solar light irradiation

    NASA Astrophysics Data System (ADS)

    Islam, M. Jahurul; Reddy, D. Amaranatha; Ma, Rory; Kim, Yujin; Kim, Tae Kyu

    2016-11-01

    Solar photocatalytic water treatment has emerged as a promising way to provide clean water. However, most traditional photocatalysts (TiO2, ZnO, etc.) are active only under ultraviolet light and have high recombination rates of photoinduced electron-hole pairs; therefore, they are not sufficient to fulfill all of the demands of practical applications. This problem could be overcome by developing highly solar-light-active and durable heterostructured photocatalysts. In this study, a new solar-light-active heterostructured reduced graphene oxide (RGO)/BiOI/AgI photocatalyst was successfully fabricated through a simple precipitation method. The resultant heterostructured RGO/BiOI/AgI nanocomposite exhibited extraordinary photocatalytic performance in the degradation of rhodamine B (RhB) under simulated sunlight irradiation. The measured rate constant of the RGO/BiOI/AgI nanocomposite was six times higher than that of bare BiOI nanostructures. Its extraordinary capacity for harvesting full-spectrum light and long-term stability makes the RGO/BiOI/AgI nanocomposite a potential photocatalyst for environmental remediation.

  18. Dielectric response of metal/SrTiO{sub 3}/two-dimensional electron liquid heterostructures

    SciTech Connect

    Mikheev, Evgeny; Raghavan, Santosh; Stemmer, Susanne

    2015-08-17

    Maximizing the effective dielectric constant of the gate dielectric stack is important for electrostatically controlling high carrier densities inherent to strongly correlated materials. SrTiO{sub 3} is uniquely suited for this purpose, given its extremely high dielectric constant, which can reach 10{sup 4}. Here, we present a systematic study of the thickness dependence of the dielectric response and leakage of SrTiO{sub 3} that is incorporated into a vertical structure on a high-carrier-density two-dimensional electron liquid (2DEL). A simple model can be used to interpret the data. The results show a need for improved interface control in the design of metal/SrTiO{sub 3}/2DEL devices.

  19. Biomarker sensing using nanostructured metal oxide sensors

    NASA Astrophysics Data System (ADS)

    Kalyanasundaram, Krithika

    Resistive Chemical sensors are those gas sensitive materials, typically semiconducting metal oxides, that change their electrical properties in response to a change in the ambient. The key features of a chemosensor are sensitivity, selectivity, response time and sensor stability. The hypothesis of this work is that, since metal oxides are polymorphic compounds, the crystal structure of the specific polymorph determines the relative gas selectivity of the material; also that the morphology of the sensing element determines the gas sensitivity limit. This work focuses on the synthesis of nanostructured metal oxides for chemosensors used in selective 'biomarker' detection. Biomarkers are chemical compounds, products of human metabolism which act as specific disease markers. The biomarkers studied in this work include NO, isoprene, NH3, ethanol and acetone which can all be found in exhaled human breath and which allow the non-invasive detection of a range of diseases. Sensors based on three different metal oxides-MoO3, WO 3, and TiO2 were fabricated using sol-gel, electrospinning and spray pyrolysis techniques and tested both as single elements and in an array configuration (electronic nose). The effects of the processing method used, grain size and shape and crystal phase of the material produced, and temperature effects of postsynthesis processing and sensing have been evaluated. Structural characterization has been carried out using X-Ray Diffraction, Scanning and High Resolution Transmission Electron Microscopy, while spectroscopic measurements using XPS, Raman and In-situ FTIR provide valuable information about the surface-analyte interactions. This work has shown that the use of monoclinic polymorph of WO3 yields a selective response to NO, while the other phase of the same oxide give a non-selective chemical response. The orthorhombic phase of MoO 3 exhibits specificity to NH3. An explanation for the variable sensing properties is given based on the gas

  20. Sorption mechanisms of metals to graphene oxide

    SciTech Connect

    Showalter, Allison R.; Duster, Thomas A.; Szymanowski, Jennifer E. S.; Na, Chongzheng; Fein, Jeremy B.; Bunker, Bruce A.

    2016-05-01

    Environmental toxic metal contamination remediation and prevention is an ongoing issue. Graphene oxide is highly sorptive for many heavy metals over a wide pH range under different ionic strength conditions. We present x-ray absorption fine structure (XAFS) spectroscopy results investigating the binding environment of Pb(II), Cd(II) and U(VI) ions onto multi-layered graphene oxide (MLGO). Analysis indicates that the dominant sorption mechanism of Pb to MLGO changes as a function of pH, with increasing inner sphere contribution as pH increases. In contrast, the sorption mechanism of Cd to MLGO remains constant under the studied pH range. This adsorption mechanism is an electrostatic attraction between the hydrated Cd+2 ion and the MLGO surface. The U(VI), present as the uranyl ion, changes only subtly as a function of pH and is bound to the surface via an inner sphere bond. Knowledge of the binding mechanism for each metal is necessary to help in optimizing environmental remediation or prevention in filtration systems.

  1. Metallic and insulating oxide interfaces controlled by electronic correlations.

    SciTech Connect

    Jang, H. W.; Felker, D. A.; Bark, C. W.; Wang, Y.; Niranjan , M. K.; Nelson, C. T.; Zhang, Y.; Su, D.; Folkman, C. M.; Baek, S. H.; Lee, S.; Janicka, K.; Zhu, Y.; Pan, X. Q.; Fong, D. D.; Tsymbal, E. Y.; Rzchowski, M. S.; Eom, C. B.; Materials Science Division; Univ. of Wisconsin at Madison; Univ. of Nebraska at Lincoln; Univ. of Michigan; BNL

    2011-01-01

    The formation of two-dimensional electron gases (2DEGs) at complex oxide interfaces is directly influenced by the oxide electronic properties. We investigated how local electron correlations control the 2DEG by inserting a single atomic layer of a rare-earth oxide (RO) [R is lanthanum (La), praseodymium (Pr), neodymium (Nd), samarium (Sm), or yttrium (Y)] into an epitaxial strontium titanate oxide (SrTiO{sub 3}) matrix using pulsed-laser deposition with atomic layer control. We find that structures with La, Pr, and Nd ions result in conducting 2DEGs at the inserted layer, whereas the structures with Sm or Y ions are insulating. Our local spectroscopic and theoretical results indicate that the interfacial conductivity is dependent on electronic correlations that decay spatially into the SrTiO{sub 3} matrix. Such correlation effects can lead to new functionalities in designed heterostructures.

  2. Metallic and Insulating Oxide Interfaces Controlled by Electronic Correlations

    SciTech Connect

    Jang, H.W.; Su, D.; Jang, H.W.; Felker, D.A.; Bark, C.W.; Wang, Y.; Niranjan, M.K.; Nelson, C.T.; Zhang, Y.; Folkman, C.M.; Baek, S.H.; Lee, S.; Janicka, K.; Zhu, Y.; Pan, X.Q.; Fong,, D.D.; Tsymbal, E.Y.; Rzchowski, M.S.; Eom, C.B.

    2011-02-18

    The formation of two-dimensional electron gases (2DEGs) at complex oxide interfaces is directly influenced by the oxide electronic properties. We investigated how local electron correlations control the 2DEG by inserting a single atomic layer of a rare-earth oxide (RO) [RO is lanthanum (La), praseodymium (Pr), neodymium (Nd), samarium (Sm), or yttrium (Y)] into an epitaxial strontium titanate oxide (SrTiO{sub 3}) matrix using pulsed-laser deposition with atomic layer control. We find that structures with La, Pr, and Nd ions result in conducting 2DEGs at the inserted layer, whereas the structures with Sm or Y ions are insulating. Our local spectroscopic and theoretical results indicate that the interfacial conductivity is dependent on electronic correlations that decay spatially into the SrTiO{sub 3} matrix. Such correlation effects can lead to new functionalities in designed heterostructures.

  3. Thermally stable crystalline mesoporous metal oxides with substantially uniform pores

    SciTech Connect

    Wiesner, Ulrich; Orilall, Mahendra Christopher; Lee, Jinwoo; DiSalvo, Jr., Francis J

    2015-01-27

    Highly crystalline metal oxide-carbon composites, as precursors to thermally stable mesoporous metal oxides, are coated with a layer of amorphous carbon. Using a `one-pot` method, highly crystalline metal oxide-carbon composites are converted to thermally stable mesoporous metal oxides, having highly crystalline mesopore walls, without causing the concomitant collapse of the mesostructure. The `one-pot` method uses block copolymers with an sp or sp 2 hybridized carbon containing hydrophobic block as structure directing agents which converts to a sturdy, amorphous carbon material under appropriate heating conditions, providing an in-situ rigid support which maintains the pores of the oxides intact while crystallizing at temperatures as high as 1000 deg C. A highly crystalline metal oxide-carbon composite can be heated to produce a thermally stable mesoporous metal oxide consisting of a single polymorph.

  4. Process for producing metal compounds from graphite oxide

    NASA Technical Reports Server (NTRS)

    Hung, Ching-Cheh (Inventor)

    2000-01-01

    A process for providing elemental metals or metal oxides distributed on a carbon substrate or self-supported utilizing graphite oxide as a precursor. The graphite oxide is exposed to one or more metal chlorides to form an intermediary product comprising carbon, metal, chloride, and oxygen This intermediary product can be flier processed by direct exposure to carbonate solutions to form a second intermediary product comprising carbon, metal carbonate, and oxygen. Either intermediary product may be further processed: a) in air to produce metal oxide; b) in an inert environment to produce metal oxide on carbon substrate; c) in a reducing environment to produce elemental metal distributed on carbon substrate. The product generally takes the shape of the carbon precursor.

  5. Process for Producing Metal Compounds from Graphite Oxide

    NASA Technical Reports Server (NTRS)

    Hung, Ching-Cheh (Inventor)

    2000-01-01

    A process for providing elemental metals or metal oxides distributed on a carbon substrate or self-supported utilizing graphite oxide as a precursor. The graphite oxide is exposed to one or more metal chlorides to form an intermediary product comprising carbon. metal. chloride. and oxygen This intermediary product can be flier processed by direct exposure to carbonate solutions to form a second intermediary product comprising carbon. metal carbonate. and oxygen. Either intermediary product may be further processed: a) in air to produce metal oxide: b) in an inert environment to produce metal oxide on carbon substrate: c) in a reducing environment. to produce elemental metal distributed on carbon substrate. The product generally takes the shape of the carbon precursor.

  6. Reduced graphene oxide-metal/metal oxide composites: facile synthesis and application in water purification.

    PubMed

    Sreeprasad, T S; Maliyekkal, Shihabudheen M; Lisha, K P; Pradeep, T

    2011-02-15

    This paper describes a versatile, and simple synthetic route for the preparation of a range of reduced graphene oxide (RGO)-metal/metal oxide composites and their application in water purification. The inherent reduction ability of RGO has been utilized to produce the composite structure from the respective precursor ions. Various spectroscopic and microscopic techniques were employed to characterize the as-synthesized composites. The data reveal that the RGO-composites are formed through a redox-like reaction between RGO and the metal precursor. RGO is progressively oxidized primarily to graphene oxide (GO) and the formed metal nanoparticles are anchored onto the carbon sheets. Metal ion scavenging applications of RGO-MnO(2) and RGO-Ag were demonstrated by taking Hg(II) as the model pollutant. RGO and the composites give a high distribution coefficient (K(d)), greater than 10 L g(-1) for Hg(II) uptake. The K(d) values for the composites are found to be about an order of magnitude higher compared to parent RGO and GO for this application. A methodology was developed to immobilize RGO-composites on river sand (RS) using chitosan as the binder. The as-supported composites are found to be efficient adsorbent candidates for field application.

  7. Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide.

    PubMed

    Sampson, Matthew D; Emery, Jonathan D; Pellin, Michael J; Martinson, Alex B F

    2017-04-05

    Atomic layer deposition (ALD) of several metal oxides is selectivity inhibited on alkanethiol self-assembled monolayers (SAMs) on Au, and the eventual nucleation mechanism is investigated. The inhibition ability of the SAM is significantly improved by the in situ H2-plasma pretreatment of the Au substrate prior to the gas-phase deposition of a long-chain alkanethiol, 1-dodecanethiol (DDT). This more rigorous surface preparation inhibits even aggressive oxide ALD precursors, including trimethylaluminum and water, for at least 20 cycles. We study the effect that the ALD precursor purge times, growth temperature, alkanethiol chain length, alkanethiol deposition time, and plasma treatment time have on Al2O3 ALD inhibition. This is the first example of Al2O3 ALD inhibition from a vapor-deposited SAM. The inhibitions of Al2O3, ZnO, and MnO ALD processes are compared, revealing the versatility of this selective surface treatment. Atomic force microscopy and grazing-incidence X-ray fluorescence further reveal insight into the mechanism by which the well-defined surface chemistry of ALD may eventually be circumvented to allow metal oxide nucleation and growth on SAM-modified surfaces.

  8. Surface studies of gas sensing metal oxides.

    PubMed

    Batzill, Matthias; Diebold, Ulrike

    2007-05-21

    The relation of surface science studies of single crystal metal oxides to gas sensing applications is reviewed. Most metal oxide gas sensors are used to detect oxidizing or reducing gases and therefore this article focuses on surface reduction processes and the interaction of oxygen with these surfaces. The systems that are discussed are: (i) the oxygen vacancy formation on the surface of the ion conductor CeO(2)(111); (ii) interaction of oxygen with TiO(2) (both adsorption processes and the incorporation of oxygen into the TiO(2)(110) lattice are discussed); (iii) the varying surface composition of SnO(2)(101) and its consequence for the adsorption of water; and (iv) Cu modified ZnO(0001)-Zn surfaces and its interaction with oxygen. These examples are chosen to give a comprehensive overview of surface science studies of different kinds of gas sensing materials and to illustrate the potential that surface science studies have to give fundamental insight into gas sensing phenomena.

  9. Heavy metal removal from water/wastewater by nanosized metal oxides: a review.

    PubMed

    Hua, Ming; Zhang, Shujuan; Pan, Bingcai; Zhang, Weiming; Lv, Lu; Zhang, Quanxing

    2012-04-15

    Nanosized metal oxides (NMOs), including nanosized ferric oxides, manganese oxides, aluminum oxides, titanium oxides, magnesium oxides and cerium oxides, provide high surface area and specific affinity for heavy metal adsorption from aqueous systems. To date, it has become a hot topic to develop new technologies to synthesize NMOs, to evaluate their removal of heavy metals under varying experimental conditions, to reveal the underlying mechanism responsible for metal removal based on modern analytical techniques (XAS, ATR-FT-IR, NMR, etc.) or mathematical models, and to develop metal oxide-based materials of better applicability for practical use (such as granular oxides or composite materials). The present review mainly focuses on NMOs' preparation, their physicochemical properties, adsorption characteristics and mechanism, as well as their application in heavy metal removal. In addition, porous host supported NMOs are particularly concerned because of their great advantages for practical application as compared to the original NMOs. Also, some magnetic NMOs were included due to their unique separation performance.

  10. The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy

    SciTech Connect

    Vogt, Patrick; Bierwagen, Oliver

    2015-02-23

    The hetero-epitaxial growth of the n-type semiconducting oxides β-Ga{sub 2}O{sub 3}, In{sub 2}O{sub 3}, and SnO{sub 2} on c- and r-plane sapphire was performed by plasma-assisted molecular beam epitaxy. The growth-rate and desorbing flux from the substrate were measured in-situ under various oxygen to metal ratios by laser reflectometry and quadrupole mass spectrometry, respectively. These measurements clarified the role of volatile sub-oxide formation (Ga{sub 2}O, In{sub 2}O, and SnO) during growth, the sub-oxide stoichiometry, and the efficiency of oxide formation for the three oxides. As a result, the formation of the sub-oxides decreased the growth-rate under metal-rich growth conditions and resulted in etching of the oxide film by supplying only metal flux. The flux ratio for the exclusive formation of the sub-oxide (e.g., the p-type semiconductor SnO) was determined, and the efficiency of oxide formation was found to be the highest for SnO{sub 2}, somewhat lower for In{sub 2}O{sub 3}, and the lowest for Ga{sub 2}O{sub 3}. Our findings can be generalized to further oxides that possess related sub-oxides.

  11. Polymer-assisted aqueous deposition of metal oxide films

    DOEpatents

    Li, DeQuan [Los Alamos, NM; Jia, Quanxi [Los Alamos, NM

    2003-07-08

    An organic solvent-free process for deposition of metal oxide thin films is presented. The process includes aqueous solutions of necessary metal precursors and an aqueous solution of a water-soluble polymer. After a coating operation, the resultant coating is fired at high temperatures to yield optical quality metal oxide thin films.

  12. The Effect of Metal Oxide on Nanoparticles from Thermite Reactions

    ERIC Educational Resources Information Center

    Moore, Lewis Ryan

    2006-01-01

    The purpose of this research was to determine how metal oxide used in a thermite reaction can impact the production of nanoparticles. The results showed the presence of nanoparticles (less than 1 micron in diameter) of at least one type produced by each metal oxide. The typical particles were metallic spheres, which ranged from 300 nanometers in…

  13. Synthesis and electronic applications of oxide-metal eutectic composites

    SciTech Connect

    Holder, J. D.; Cochran, J. K.; Hill, D. N.; Chapman, A. T.; Clark, G. W.

    1980-01-01

    A review is given of important developments in the synthesis of oxide-metal eutectic composites and the composite application in the continuing development of field emitters. Known metal oxide-metal binary and ternary eutectic systems are listed. The synthesis, electrical conductivity, thermodynamics, and applications are discussed. (FS)

  14. Testing Reciprocity of Spin Pumping and Spin Transfer Torque in Ferromagnet/Spin-Orbit Metal Heterostructures

    NASA Astrophysics Data System (ADS)

    Boone, Carl; Emori, Satoru; Nan, Tianxiang; Sun, Nian

    2015-03-01

    Spin pumping from a ferromagnet (FM) to a normal metal (NM) and spin transfer torque (STT) generated in a FM from an injected spin current should be reciprocal processes governed by the spin mixing conductance. The same should be true for the spin Hall effect (SHE) and inverse SHE, which are used to generate and measure spin currents. Past experiments on multilayer thin films involving FM and NM interfaces have measured only spin pumping or spin injection, and have utilized incomplete modeling that results in different effective values for the same parameter such as the spin mixing conductance or spin Hall angle. This gives rise to a large range of values reported in the literature. Here we develop a complete model for spin flow in the FM/NM system including SHE, spin diffusion and spin pumping that allows us to determine the true values of the spin transport parameters. To explore the physcis we use STT-ferromagnetic resonance (FMR) experiments of NM/FM/NM trilayers, and FMR spectroscopy of FM/NM bilayers where we simultaneously measure damping changes due to spin pumping, voltage generated by the inverse SHE, and STT generated by the SHE. These experiments, combined with the complete modeling, allow us to test the reciprocity of spin pumping and STT plus the SHE and its inverse.

  15. Structural and electronic properties of Sr(Zr,Ti)O3 alloys for use in oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Weston, Leigh; Janotti, Anderson; Cui, Xiangyuan; Himmetoglu, Burak; Stampfl, Catherine; van de Walle, Chris G.

    Sr(Ti,Zr)O3 alloys are promising materials for use in oxide heterostructures, however the fundamental properties of this system have not yet been characterized. Using hybrid density functional calculations, we study the electronic and structural properties of ordered SrTixZr1-xO3 alloys at x=0, 0.25, 0.5, 0.75, and 1. As Ti is added to SrZrO3, the lattice parameter is reduced according to Vegard's law, while the band gap shows a large bowing and is sensitive to the Ti distribution. For x=0.5, arranging the Ti and Zr atoms into a 1 ×1 SrZrO3/SrTiO3 superlattice along the [001] direction leads to a highly dispersive single band at the conduction-band minimum (CBM) that is absent in the parent compounds, and a direct gap close to that of pure SrTiO3. This is explained by the splitting of the Ti 3 d t2 g states in the reduced symmetry of the superlattice, lowering the band originating from the Ti 3dxy orbitals. The lifting of the orbital degeneracy around the CBM suppresses scattering due to electron-phonon interactions. We propose that short-period SrZrO3/SrTiO3 superlattices could be exploited to engineer the band structure and improve carrier mobility compared to bulk SrTiO3. This work was supported by NSF, ONR and ARC.

  16. Impacts of metal and metal oxide nanoparticles on marine organisms.

    PubMed

    Baker, Tony J; Tyler, Charles R; Galloway, Tamara S

    2014-03-01

    Increasing use of metal and metal oxide nanoparticles [Me(O)NPs] in products means many will inevitably find their way into marine systems. Their likely fate here is sedimentation following hetero-aggregation with natural organic matter and/or free anions, putting benthic, sediment-dwelling and filter feeding organisms most at risk. In marine systems, Me(O)NPs can absorb to micro-organisms with potential for trophic transfer following consumption. Filter feeders, especially bivalves, accumulate Me(O)NPs through trapping them in mucus prior to ingestion. Benthic in-fauna may directly ingest sedimented Me(O)NPs. In fish, uptake is principally via the gut following drinking, whilst Me(O)NPs caught in gill mucus may affect respiratory processes and ion transport. Currently, environmentally-realistic Me(O)NP concentrations are unlikely to cause significant adverse acute health problems, however sub-lethal effects e.g. oxidative stresses have been noted in many organisms, often deriving from dissolution of Ag, Cu or Zn ions, and this could result in chronic health impacts. Crown Copyright © 2013. Published by Elsevier Ltd. All rights reserved.

  17. Orbital physics in transition-metal oxides

    PubMed

    Tokura; Nagaosa

    2000-04-21

    An electron in a solid, that is, bound to or nearly localized on the specific atomic site, has three attributes: charge, spin, and orbital. The orbital represents the shape of the electron cloud in solid. In transition-metal oxides with anisotropic-shaped d-orbital electrons, the Coulomb interaction between the electrons (strong electron correlation effect) is of importance for understanding their metal-insulator transitions and properties such as high-temperature superconductivity and colossal magnetoresistance. The orbital degree of freedom occasionally plays an important role in these phenomena, and its correlation and/or order-disorder transition causes a variety of phenomena through strong coupling with charge, spin, and lattice dynamics. An overview is given here on this "orbital physics," which will be a key concept for the science and technology of correlated electrons.

  18. First Principles Modeling of Metal/Ceramic Multilayer Nano-heterostructures.

    SciTech Connect

    Yadav, Satyesh K.; Wang, Jian; Misra, Amit; Liu, Xiang-Yang; Ramprasad, Ramamurthy

    2012-07-31

    Nanoscaled multilayer films composed of metals and ceramics have been explored for their potential applications as ductile, yet strong, materials. It is believed that at the nanoscale, the interfaces between the two materials constituting the multilayer assume an increasingly important role in determining the properties, as they comprise a more significant volume fraction of the multilayer with decreasing layer thickness. In this ab initio work, density functional theory was used to calculate the ideal shear strengths of pure Al, pure TiN, the Al/TiN interfacial region, and Al/TiN multilayers. The ideal shear strength of the Al/TiN interface was found to vary from very low (on the order of the ideal shear strength of Al) to very high (on the order of the ideal shear strength of TiN), depending on whether the TiN at the interface was Ti- or N-terminated, respectively. The results suggest that the shear properties of Al/TiN depend strongly on the chemistry of the interface, Al:N versus Al:Ti terminations. Nevertheless, for the Al/TiN multilayers, the ideal shear strength was limited by shear in the Al layer away from the interface, even when the individual layer thickness is less than a nanometer. Further we found an unusual structural rotation of bulk single-crystal Al under uniaxial compressive strains. It was found that under strains either along the <11-2> or the <111> directions, beyond a critical stress of about 13 GPa, the Al crystal can rotate through shear in the Shockley partial direction (i.e.,<11-2>) on the {l_brace}111{r_brace} plane, in an attempt to relieve internal stresses. This phenomenon reveals a possible mechanism leading to the onset of homogeneous dislocation nucleation in Al under high uniaxial compressions.

  19. Metal oxide membranes for gas separation

    DOEpatents

    Anderson, Marc A.; Webster, Elizabeth T.; Xu, Qunyin

    1994-01-01

    A method for permformation of a microporous ceramic membrane onto a porous support includes placing a colloidal suspension of metal oxide particles on one side of the porous support and exposing the other side of the porous support to a drying stream of gas or a reactive gas stream so that the particles are deposited on the drying side of the support as a gel. The gel so deposited can be sintered to form a supported ceramic membrane having mean pore sizes less than 30 Angstroms and useful for ultrafiltration, reverse osmosis, or gas separation.

  20. Metal oxide membranes for gas separation

    DOEpatents

    Anderson, M.A.; Webster, E.T.; Xu, Q.

    1994-08-30

    A method for formation of a microporous ceramic membrane onto a porous support includes placing a colloidal suspension of metal oxide particles on one side of the porous support and exposing the other side of the porous support to a drying stream of gas or a reactive gas stream so that the particles are deposited on the drying side of the support as a gel. The gel so deposited can be sintered to form a supported ceramic membrane having mean pore sizes less than 30 Angstroms and useful for ultrafiltration, reverse osmosis, or gas separation. 4 figs.

  1. Surfactant-Templated Mesoporous Metal Oxide Nanowires

    DOE PAGES

    Luo, Hongmei; Lin, Qianglu; Baber, Stacy; ...

    2010-01-01

    We demore » monstrate two approaches to prepare mesoporous metal oxide nanowires by surfactant assembly and nanoconfinement via sol-gel or electrochemical deposition. For example, mesoporous Ta 2 O 5 and zeolite nanowires are prepared by block copolymer Pluronic 123-templated sol-gel method, and mesoporous ZnO nanowires are prepared by electrodeposition in presence of anionic surfactant sodium dodecyl sulfate (SDS) surfactant, in porous membranes. The morphologies of porous nanowires are studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analyses.« less

  2. Preferential orientation of metal oxide superconducting materials

    DOEpatents

    Capone, Donald W.; Poeppel, Roger B.

    1991-01-01

    A polycrystalline metal oxide such as YBa.sub.2 Cu.sub.3 O.sub.7-X (where 0

  3. Metallic oxide switches using thick film technology

    NASA Technical Reports Server (NTRS)

    Patel, D. N.; Williams, L., Jr.

    1974-01-01

    Metallic oxide thick film switches were processed on alumina substrates using thick film technology. Vanadium pentoxide in powder form was mixed with other oxides e.g., barium, strontium copper and glass frit, ground to a fine powder. Pastes and screen printable inks were made using commercial conductive vehicles and appropriate thinners. Some switching devices were processed by conventional screen printing and firing of the inks and commercial cermet conductor terminals on 96% alumina substrates while others were made by applying small beads or dots of the pastes between platinum wires. Static, and dynamic volt-ampere, and pulse tests indicate that the switching and self-oscillatory characteristics of these devices could make them useful in memory element, oscillator, and automatic control applications.

  4. Chemical Sensors Based on Metal Oxide Nanostructures

    NASA Technical Reports Server (NTRS)

    Hunter, Gary W.; Xu, Jennifer C.; Evans, Laura J.; VanderWal, Randy L.; Berger, Gordon M.; Kulis, Mike J.; Liu, Chung-Chiun

    2006-01-01

    This paper is an overview of sensor development based on metal oxide nanostructures. While nanostructures such as nanorods show significan t potential as enabling materials for chemical sensors, a number of s ignificant technical challenges remain. The major issues addressed in this work revolve around the ability to make workable sensors. This paper discusses efforts to address three technical barriers related t o the application of nanostructures into sensor systems: 1) Improving contact of the nanostructured materials with electrodes in a microse nsor structure; 2) Controling nanostructure crystallinity to allow co ntrol of the detection mechanism; and 3) Widening the range of gases that can be detected by using different nanostructured materials. It is concluded that while this work demonstrates useful tools for furt her development, these are just the beginning steps towards realizati on of repeatable, controlled sensor systems using oxide based nanostr uctures.

  5. Covalent bonding in heavy metal oxides

    NASA Astrophysics Data System (ADS)

    Bagus, Paul S.; Nelin, Connie J.; Hrovat, Dave A.; Ilton, Eugene S.

    2017-04-01

    Novel theoretical methods were used to quantify the magnitude and the energetic contributions of 4f/5f-O2p and 5d/6d-O2p interactions to covalent bonding in lanthanide and actinide oxides. Although many analyses have neglected the involvement of the frontier d orbitals, the present study shows that f and d covalencies are of comparable importance. Two trends are identified. As is expected, the covalent mixing is larger when the nominal oxidation state is higher. More subtly, the importance of the nf covalent mixing decreases sharply relative to (n + 1)d as the nf occupation increases. Atomic properties of the metal cations that drive these trends are identified.

  6. Suppression of Octahedral Tilts and Associated Changes in Electronic Properties at Epitaxial Oxide Heterostructure Interfaces

    NASA Astrophysics Data System (ADS)

    Borisevich, A. Y.; Chang, H. J.; Huijben, M.; Oxley, M. P.; Okamoto, S.; Niranjan, M. K.; Burton, J. D.; Tsymbal, E. Y.; Chu, Y. H.; Yu, P.; Ramesh, R.; Kalinin, S. V.; Pennycook, S. J.

    2010-08-01

    Epitaxial oxide interfaces with broken translational symmetry have emerged as a central paradigm behind the novel behaviors of oxide superlattices. Here, we use scanning transmission electron microscopy to demonstrate a direct, quantitative unit-cell-by-unit-cell mapping of lattice parameters and oxygen octahedral rotations across the BiFeO3-La0.7Sr0.3MnO3 interface to elucidate how the change of crystal symmetry is accommodated. Combined with low-loss electron energy loss spectroscopy imaging, we demonstrate a mesoscopic antiferrodistortive phase transition near the interface in BiFeO3 and elucidate associated changes in electronic properties in a thin layer directly adjacent to the interface.

  7. Suppression of Octahedral Tilts and Associated Changes in Electronic Properties at Epitaxial Oxide Heterostructure Interfaces

    SciTech Connect

    Borisevich, Albina Y; Chang, Hye Jung; Huijben, Mark; Oxley, Mark P; Okamoto, Satoshi; Niranjan, M K; Burton, J D; Tsymbal, E Y; Chu, Ying-Hao; Yu, P; Ramesh, R.; Kalinin, Sergei V; Pennycook, Stephen J

    2010-01-01

    Epitaxial oxide interfaces with broken translational symmetry have emerged as a central paradigm behind the novel behaviors of oxide superlattices. Here, we use scanning transmission electron microscopy to demonstrate a direct, quantitative unit-cell-by-unit-cell mapping of lattice parameters and oxygen octahedral rotations across the BiFeO{sub 3{sup -}}La{sub 0.7}Sr{sub 0.3}MnO{sub 3} interface to elucidate how the change of crystal symmetry is accommodated. Combined with low-loss electron energy loss spectroscopy imaging, we demonstrate a mesoscopic antiferrodistortive phase transition near the interface in BiFeO{sub 3} and elucidate associated changes in electronic properties in a thin layer directly adjacent to the interface.

  8. Highly insulating ferromagnetic cobaltite heterostructures

    DOE PAGES

    Choi, Woo Seok; Kang, Kyeong Tae; Jeen, Hyoungjeen; ...

    2017-04-02

    Ferromagnetic insulators are rather rare but possess great technological potential in, for example, spintronics. Individual control of ferromagnetic properties and electronic transport provides a useful design concept of multifunctional oxide heterostructures. We studied the close correlation among the magnetism, atomic structure, and electronic structure of oxide heterostructures composed of the ferromagnetic perovskite LaCoO3 and the antiferromagnetic brownmillerite SrCoO2.5 epitaxial thin film layers. By reversing the stacking sequence of the two layers, we could individually modify the electric resistance and saturation magnetic moment. Lastly, the ferromagnetic insulating behavior in the heterostructures was understood in terms of the electronic reconstruction at themore » oxide surface/interfaces and crystalline quality of the constituent layers.« less

  9. Method of making controlled morphology metal-oxides

    DOEpatents

    Ozcan, Soydan; Lu, Yuan

    2016-05-17

    A method of making metal oxides having a preselected morphology includes preparing a suspension that includes a solvent, polymeric nanostructures having multiplicities of hydroxyl surface groups and/or carboxyl surface groups, and a metal oxide precursor. The suspension has a preselected ratio of the polymeric nanostructures to the metal oxide precursor of at least 1:3, the preselected ratio corresponding to a preselected morphology. Subsequent steps include depositing the suspension onto a substrate, removing the solvent to form a film, removing the film from the substrate, and annealing the film to volatilize the polymeric nanostructures and convert the metal oxide precursor to metal oxide nanoparticles having the preselected morphology or to a metal oxide nanosheet including conjoined nanoparticles having the preselected morphology.

  10. Electrostatic potentials for metal-oxide surfaces and interfaces

    NASA Astrophysics Data System (ADS)

    Streitz, F. H.; Mintmire, J. W.

    1994-10-01

    As most technologically important metals will form oxides readily, any complete study of adhesion at real metal surfaces must include the metal-oxide interface. The role of this ubiquitous oxide layer cannot be overlooked, as the adhesive properties of the oxide or oxide-metal system can be expected to differ profoundly from the adhesive properties of a bare metal surface. We report on the development of a computational method for molecular-dynamics simulations, which explicitly includes variable charge transfer between anions and cations. This method is found to be capable of describing the elastic properties, surface energies, and surface relaxation of crystalline metal oxides accurately. We discuss in detail results using this method for α-alumina and several of its low-index faces.

  11. Magnesium oxide for improved heavy metals removal

    SciTech Connect

    Schiller, J.E.; Khalafalla, S.E.

    1984-01-01

    To improve technology for treating process water, US Bureau of Mines research has shown that magnesium oxide (MgO) has many advantages over lime or caustic soda for precipitating heavy metals. Sludge produced by MgO occupies only 0.2-0.3 times as much volume as the precipitate made using a soluble base. While a settled, lime-formed precipitate is easily resuspended, the MgO-metal hydroxide sludge becomes cemented together on standing. Settling of the metal hydroxides from a dilute suspension is more complete than precipitates formed with other bases. Virtually any metal that can be precipitated by raising the pH can be treated using MgO. A three-fold to four-fold stoichiometric excess of solid reagent is added. The mixture is reacted for five to 10 minutes. Polymer is added, and settling or filtration completes the process. Because of the greater cost of MgO compared with lime, large-scale practice of this technology will probably be limited to water containing 50 mg/L (3 gr per gal) or less of dissolved metals. For such dilute solutions, chemicals are not a large fraction of total treatment costs, so more desirable sludge properties might justify higher chemical expenses. While the MgO process is technically suitable for widespread application, the extent to which it is adopted will probably be determined by a trade-off between the greater cost of MgO compared with lime and the superior properties of the precipitates and their corresponding ultimate disposal costs.

  12. Correlating Interfacial Structure and Magnetism in Thin-Film Oxide Heterostructures Using Transmission Electron Microscopy and Polarized Neutron Reflectometry

    NASA Astrophysics Data System (ADS)

    Spurgeon, Steven Richard

    Oxide thin-films have attracted considerable attention for a new generation of spintronics devices, where both electron charge and spin are used to transport information. However, a poor understanding of the local features that mediate magnetization and coupling in these materials has greatly limited their deployment into new information and communication technologies. This thesis describes direct, local measurements of structure-property relationships in ferrous thin-films and La1--xSrxMnO3 (LSMO) / Pb(ZrxTi1--x)O3 (PZT) thin-film heterostructures using spatially-resolved characterization techniques. In the first part of this thesis we explore the properties of ferrous spintronic thin-films. These films serve as a model system to establish a suite of interfacial characterization techniques for subsequent studies. We then study the static behavior of LSMO / PZT devices with polarization set by the underlying substrate. Using transmission electron microscopy and geometric phase analysis we reveal the presence of significant local strain gradients in these films for the first time. Electron energy loss spectroscopy mapping of the LSMO / PZT interface reveals Mn valence changes induced by charge-transfer screening. Bulk magnetometry and polarized neutron reflectometry indicate that these chemical and strain changes are associated with a graded magnetization across the LSMO layer. Density functional theory calculations are presented, which show that strain and charge-transfer screening act locally to suppress magnetization in the LSMO by changing the Mn orbital polarization. In the second half of this thesis, we explore asymmetric screening effects on magnetization LSMO / PZT composites. We find that the local ferroelectric polarization can vary widely and that this may be responsible for reduced charge-transfer effects, as well as magnetic phase gradients at interfaces. From this information and electron energy loss spectroscopy, we construct a map of the magnetic

  13. Thin films of metal oxides on metal single crystals: Structure and growth by scanning tunneling microscopy

    SciTech Connect

    Galloway, Heather Claire

    1995-12-01

    Detailed studies of the growth and structure of thin films of metal oxides grown on metal single crystal surfaces using Scanning Tunneling Microscopy (STM) are presented. The oxide overlayer systems studied are iron oxide and titanium oxide on the Pt(III) surface. The complexity of the metal oxides and large lattice mismatches often lead to surface structures with large unit cells. These are particularly suited to a local real space technique such as scanning tunneling microscopy. In particular, the symmetry that is directly observed with the STM elucidates the relationship of the oxide overlayers to the substrate as well as distinguishing, the structures of different oxides.

  14. Simple transition metal oxides (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Schuller, Ivan K.; Basaran, Ali C.; de la Venta, Jose; Ramirez, Juan Gabriel; Saerbeck, Thomas; Valmianski, Ilya; Wang, Siming

    2016-10-01

    Hybrid materials allow the engineering of new material properties by creative uses of proximity effects. When two dissimilar materials are in close physical proximity the properties of each one may be radically modified or occasionally a completely new material emerges. In the area of magnetism, controlling the magnetic properties of ferromagnetic thin films without magnetic fields is an on- going challenge with multiple technological implications for low- energy consumption memory and logic devices. Interesting possibilities include ferromagnets in proximity to dissimilar materials such as antiferromagnets or oxides that undergo metal-insulator transitions. The proximity of ferromagnets to antiferromagnets has given rise to the extensively studied Exchange Bias[1]. Our recent investigations in this field have addressed crucial issues regarding the importance of the antiferromagnetic [2-3] and ferromagnetic [4] bulk for the Exchange Bias and the unusual short time dynamics [5]. In a series of recent studies, we have investigated the magnetic properties of different hybrids of ferromagnets (Ni, Co and Fe) and oxides, which undergo metal-insulator and structural phase transitions. Both the static as well as dynamical properties of the ferromagnets are drastically affected. Static properties such as the coercivity, anisotropy and magnetization [6-8] and dynamical properties such as the microwave response are clearly modified by the proximity effect and give raise to interesting perhaps useful properties. Work supported by US-AFOSR and US-DOE

  15. Lateral topological crystalline insulator heterostructure

    NASA Astrophysics Data System (ADS)

    Sun, Qilong; Dai, Ying; Niu, Chengwang; Ma, Yandong; Wei, Wei; Yu, Lin; Huang, Baibiao

    2017-06-01

    The emergence of lateral heterostructures fabricated by two-dimensional building blocks brings many exciting realms in material science and device physics. Enriching available nanomaterials for creating such heterostructures and enabling the underlying new physics is highly coveted for the integration of next-generation devices. Here, we report a breakthrough in lateral heterostructure based on the monolayer square transition-metal dichalcogenides MX2 (M  =  W, X  =  S/Se) modules. Our results reveal that the MX2 lateral heterostructure (1S-MX2 LHS) can possess excellent thermal and dynamical stability. Remarkably, the highly desired two-dimensional topological crystalline insulator phase is confirmed by the calculated mirror Chern number {{n}\\text{M}}=-1 . A nontrivial band gap of 65 meV is obtained with SOC, indicating the potential for room-temperature observation and applications. The topologically protected edge states emerge at the edges of two different nanoribbons between the bulk band gap, which is consistent with the mirror Chern number. In addition, a strain-induced topological phase transition in 1S-MX2 LHS is also revealed, endowing the potential utilities in electronics and spintronics. Our predictions not only introduce new member and vitality into the studies of lateral heterostructures, but also highlight the promise of lateral heterostructure as appealing topological crystalline insulator platforms with excellent stability for future devices.

  16. Fluidized reduction of oxides on fine metal powders without sintering

    NASA Technical Reports Server (NTRS)

    Hayashi, T.

    1985-01-01

    In the process of reducing extremely fine metal particles (av. particle size or = 1000 angstroms) covered with an oxide layer, the metal particles are fluidized by a gas flow contg. H, heated, and reduced. The method uniformly and easily reduces surface oxide layers of the extremely fine metal particles without causing sintering. The metal particles are useful for magnetic recording materials, conductive paste, powder metallurgy materials, chem. reagents, and catalysts.

  17. One-dimensional metal oxide nanostructures for heterogeneous catalysis.

    PubMed

    Zhang, Qian; Wang, Hsin-Yi; Jia, Xinli; Liu, Bin; Yang, Yanhui

    2013-08-21

    Metal oxides are of paramount importance in heterogeneous catalysis as either supports or active phases. Controlled synthesis of one-dimensional (1D) metal oxide nanostructures has received enormous attention in heterogeneous catalysis due to the possibility of tailoring the properties of metal oxides by tuning their shapes, sizes, and compositions. This feature article highlights recent advances in shape controlled synthesis of 1D metal oxide nanostructures and their applications in heterogeneous catalysis, with the aim of introducing new insights into the heterogeneous catalyst design.

  18. Method of producing solution-derived metal oxide thin films

    SciTech Connect

    Boyle, T.J.; Ingersoll, D.

    2000-07-11

    A method is described for preparing metal oxide thin films by a solution method. A {beta}-metal {beta}-diketonate or carboxylate compound, where the metal is selected from groups 8, 9, 10, 11, and 12 of the Periodic Table, is solubilized in a strong Lewis base to form a homogeneous solution. This precursor solution forms within minutes and can be deposited on a substrate in a single layer or a multiple layers to form a metal oxide thin film. The substrate with the deposited thin film is heated to change the film from an amorphous phase to a ceramic metal oxide and cooled.

  19. Method of producing solution-derived metal oxide thin films

    DOEpatents

    Boyle, Timothy J.; Ingersoll, David

    2000-01-01

    A method of preparing metal oxide thin films by a solution method. A .beta.-metal .beta.-diketonate or carboxylate compound, where the metal is selected from groups 8, 9, 10, 11, and 12 of the Periodic Table, is solubilized in a strong Lewis base to form a homogeneous solution. This precursor solution forms within minutes and can be deposited on a substrate in a single layer or a multiple layers to form a metal oxide thin film. The substrate with the deposited thin film is heated to change the film from an amorphous phase to a ceramic metal oxide and cooled.

  20. Microwave properties of thermochromic metal oxide surfaces

    NASA Astrophysics Data System (ADS)

    Ousbäck, Jan-Olof; Kariis, Hans

    2006-09-01

    Thermochromic metal oxides with a Mott transition, such as vanadium dioxide (VO II) exhibit an extensive alteration in their infrared reflectivity when heated above the transition temperature. For VO II the infrared reflectivity increases as the material becomes more metal-like above the transition temperature at 68°C. Given these dynamic electromagnetic properties in the IR-range, it is interesting to study the reflection of the material also in other wavelength ranges. The microwave properties of VO II as a function of temperature have been investigated here. Measurements were made with an automated network analyzer combined with an electrical heating unit. Reflection properties of VO II in the microwave region were determined. Above the transition temperature, an increase in the reflection of the surface was observed. The VO II became more metal-like in the whole measured microwave frequency range, as in the infrared region. It is concluded that VO II not only can be used to adapt the thermal emissivity of a surface but also to control the microwave reflectivity. Possible applications are switchable radomes, switchable radarabsorbers and heat protection for antenna apertures.

  1. Synthesis and Characterization of Mixed Metal Oxide Nanocomposite Energetic Materials

    SciTech Connect

    Gash, A; Pantoya, M; Jr., J S; Zhao, L; Shea, K; Simpson, R; Clapsaddle, B

    2003-11-18

    In the field of composite energetic materials, properties such as ingredient distribution, particle size, and morphology, affect both sensitivity and performance. Since the reaction kinetics of composite energetic materials are typically controlled by the mass transport rates between reactants, one would anticipate new and potentially exceptional performance from energetic nanocomposites. We have developed a new method of making nanostructured energetic materials, specifically explosives, propellants, and pyrotechnics, using sol-gel chemistry. A novel sol-gel approach has proven successful in preparing metal oxide/silicon oxide nanocomposites in which the metal oxide is the major component. Two of the metal oxides are tungsten trioxide and iron(III) oxide, both of which are of interest in the field of energetic materials. Furthermore, due to the large availability of organically functionalized silanes, the silicon oxide phase can be used as a unique way of introducing organic additives into the bulk metal oxide materials. As a result, the desired organic functionality is well dispersed throughout the composite material on the nanoscale. By introducing a fuel metal into the metal oxide/silicon oxide matrix, energetic materials based on thermite reactions can be fabricated. The resulting nanoscale distribution of all the ingredients displays energetic properties not seen in its microscale counterparts due to the expected increase of mass transport rates between the reactants. The synthesis and characterization of these metal oxide/silicon oxide nanocomposites and their performance as energetic materials will be discussed.

  2. Transparent Oxide Thin-Film Transistors Using n-(In2O3)0.9(SnO2)0.1/InGaZnO4 Modulation-Doped Heterostructures

    NASA Astrophysics Data System (ADS)

    Taniguchi, Satoshi; Yokozeki, Mikihiro; Ikeda, Masao; Suzuki, Toshi-kazu

    2011-04-01

    We investigated transparent oxide thin-film transistors (TFTs) using n-(In2O3)0.9(SnO2)0.1/InGaZnO4 (n-ITO/IGZO) modulation-doped heterostructures, which are effective in achieving high carrier mobilities. From transmittance measurements and UV photoemission spectroscopy, n-ITO/IGZO modulation-doped heterostructures are expected to realize the type-II energy band lineup, in which both the conduction band minimum and the valence band maximum of n-ITO are higher in energy than those of IGZO. Van der Pauw Hall measurements revealed Hall mobility enhancement and two-dimensional behavior of electrons at the n-ITO/IGZO interface. Using the n-ITO/IGZO modulation-doped heterostructures, we obtained TFTs with higher electron mobility than that of IGZO TFTs. We consider that modulation doping is a promising method for performance improvements of TFTs using transparent oxide semiconductors.

  3. Defect Chemistry and Plasmon Physics of Colloidal Metal Oxide Nanocrystals.

    PubMed

    Lounis, Sebastien D; Runnerstrom, Evan L; Llordés, Anna; Milliron, Delia J

    2014-05-01

    Plasmonic nanocrystals of highly doped metal oxides have seen rapid development in the past decade and represent a class of materials with unique optoelectronic properties. In this Perspective, we discuss doping mechanisms in metal oxides and the accompanying physics of free carrier scattering, both of which have implications in determining the properties of localized surface plasmon resonances (LSPRs) in these nanocrystals. The balance between activation and compensation of dopants limits the free carrier concentration of the most common metal oxides, placing a ceiling on the LSPR frequency. Furthermore, because of ionized impurity scattering of the oscillating plasma by dopant ions, scattering must be treated in a fundamentally different way in semiconductor metal oxide materials when compared with conventional metals. Though these effects are well-understood in bulk metal oxides, further study is needed to understand their manifestation in nanocrystals and corresponding impact on plasmonic properties, and to develop materials that surpass current limitations in free carrier concentration.

  4. Photocatalysis-Based Nanoprobes Using Noble Metal-Semiconductor Heterostructure for Visible Light-Driven in Vivo Detection of Mercury.

    PubMed

    Zhi, Lihua; Zeng, Xiaofan; Wang, Hao; Hai, Jun; Yang, Xiangliang; Wang, Baodui; Zhu, Yanhong

    2017-07-18

    The development of sensitive and reliable methods to monitor the presence of mercuric ions in cells and organisms is of great importance to biological research and biomedical applications. In this work, we propose a strategy to construct a solar-driven nanoprobe using a 3D Au@MoS2 heterostructure as a photocatalyst and rhodamine B (RB) as a fluorescent and color change reporter molecule for monitoring Hg(2+) in living cells and animals. The sensing mechanism is based on the photoinduced electron formation of gold amalgam in the 3D Au@MoS2 heterostructure under visible light illumination. This formation is able to remarkably inhibit the photocatalytic activity of the heterostructure toward RB decomposition. As a result, "OFF-ON" fluorescence and color change are produced. Such characteristics enable this new sensing platform to sensitively and selectively detect Hg(2+) in water by fluorescence and colorimetric methods. The detection limits of the fluorescence assay and colorimetric assay are 0.22 and 0.038 nM for Hg(2+), respectively; these values are well below the acceptable limits in drinking water standards (10 nM). For the first time, such photocatalysis-based sensing platform is successfully used to monitor Hg(2+) in live cells and mice. Our work therefore opens a promising photocatalysis-based analysis methodology for highly sensitive and selective in vivo Hg(2+) bioimaging studies.

  5. Structural and photoluminescence studies on catalytic growth of silicon/zinc oxide heterostructure nanowires

    PubMed Central

    2013-01-01

    Silicon/zinc oxide (Si/ZnO) core-shell nanowires (NWs) were prepared on a p-type Si(111) substrate using a two-step growth process. First, indium seed-coated Si NWs (In/Si NWs) were synthesized using a plasma-assisted hot-wire chemical vapor deposition technique. This was then followed by the growth of a ZnO nanostructure shell layer using a vapor transport and condensation method. By varying the ZnO growth time from 0.5 to 2 h, different morphologies of ZnO nanostructures, such as ZnO nanoparticles, ZnO shell layer, and ZnO nanorods were grown on the In/Si NWs. The In seeds were believed to act as centers to attract the ZnO molecule vapors, further inducing the lateral growth of ZnO nanorods from the Si/ZnO core-shell NWs via a vapor-liquid-solid mechanism. The ZnO nanorods had a tendency to grow in the direction of [0001] as indicated by X-ray diffraction and high resolution transmission electron microscopy analyses. We showed that the Si/ZnO core-shell NWs exhibit a broad visible emission ranging from 400 to 750 nm due to the combination of emissions from oxygen vacancies in ZnO and In2O3 structures and nanocrystallite Si on the Si NWs. The hierarchical growth of straight ZnO nanorods on the core-shell NWs eventually reduced the defect (green) emission and enhanced the near band edge (ultraviolet) emission of the ZnO. PMID:23590803

  6. Task-specific ionic liquid for solubilizing metal oxides.

    PubMed

    Nockemann, Peter; Thijs, Ben; Pittois, Stijn; Thoen, Jan; Glorieux, Christ; Van Hecke, Kristof; Van Meervelt, Luc; Kirchner, Barbara; Binnemans, Koen

    2006-10-26

    Protonated betaine bis(trifluoromethylsulfonyl)imide is an ionic liquid with the ability to dissolve large quantities of metal oxides. This metal-solubilizing power is selective. Soluble are oxides of the trivalent rare earths, uranium(VI) oxide, zinc(II) oxide, cadmium(II) oxide, mercury(II) oxide, nickel(II) oxide, copper(II) oxide, palladium(II) oxide, lead(II) oxide, manganese(II) oxide, and silver(I) oxide. Insoluble or very poorly soluble are iron(III), manganese(IV), and cobalt oxides, as well as aluminum oxide and silicon dioxide. The metals can be stripped from the ionic liquid by treatment of the ionic liquid with an acidic aqueous solution. After transfer of the metal ions to the aqueous phase, the ionic liquid can be recycled for reuse. Betainium bis(trifluoromethylsulfonyl)imide forms one phase with water at high temperatures, whereas phase separation occurs below 55.5 degrees C (temperature switch behavior). The mixtures of the ionic liquid with water also show a pH-dependent phase behavior: two phases occur at low pH, whereas one phase is present under neutral or alkaline conditions. The structures, the energetics, and the charge distribution of the betaine cation and the bis(trifluoromethylsulfonyl)imide anion, as well as the cation-anion pairs, were studied by density functional theory calculations.

  7. Pure electronic metal-insulator transition at the interface of complex oxides

    DOE PAGES

    Meyers, D.; Liu, Jian; Freeland, J. W.; ...

    2016-06-21

    We observed complex materials in electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. We demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. Furthermore, these findings illustrate the utility of heterointerfaces as amore » powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.« less

  8. Enhanced photoelectrochemical water splitting and photocatalytic water oxidation of Cu2O nanocube-loaded BiVO4 nanocrystal heterostructures

    NASA Astrophysics Data System (ADS)

    Wang, Wenzhong; Zhang, Weiwei; Meng, Shan; Jia, Lujie; Tan, Miao; Hao, Chenchun; Liang, Yujie; Wang, Jun; Zou, Bin

    2016-10-01

    Reducing the fast recombination of photogenerated electron-hole pairs of semiconductor photocatalyst is very important to improve its photocatalysis. In this paper we fabricate Cu2O nanocube-decorated BiVO4 nanocrystal (denoted as BiVO4@Cu2O nanocrystal@nanocube) heterostructure photocatalyst by coupling n-type BiVO4 with p-type Cu2O. The BiVO4@Cu2O nanocrystal@nanocube photocatalysts show superior photocatalytic activities in photoelectrochemical (PEC) activity and photocatalytic water oxidation to BiVO4 photocatalysts under visible light illumination. The BiVO4@Cu2O nanocrystal@nanocube heterostructure electrode achieves the highest photocurrent density of 10 μA cm-2 at 0 V versus Ag/AgCl, 5 times higher than that of BiVO4 nanocrystal electrode ( 2 μA cm-2). The light induced evolution rate of O2 generation for BiVO4@Cu2O nanocrystal@nanocube heterostructures is as high as 150 μmol h-1100 mg cat-1, more than 3 times higher than that (48 μmol h-1100 mg cat-1) of BiVO4 nanocrystals. The enhanced photocatalysis activities of the BiVO4@Cu2O nanocrystal@nanocube photocatalysts are attributed to the efficient separation of the photoexcited electron-hole pairs caused by inner electronic field (IEF) of p-n junction. This study opens up new opportunities in designing photoactive materials with highly enhanced performance for solar energy conversion.

  9. Influence of metal oxides on the adsorption characteristics of PPy/metal oxides for Methylene Blue.

    PubMed

    Chen, Jie; Feng, Jiangtao; Yan, Wei

    2016-08-01

    In this paper, the pure PPy and PPy/metal oxide composites including PPy/SiO2, PPy/Al2O3, and PPy/Fe3O4 as well as PPy coated commercial SiO2 and Al2O3 (PPy/SiO2(C) and PPy/Al2O3(C)) were successfully synthetized via chemical oxidative polymerization in acid aqueous medium to investigate the influence of metal oxides on adsorption capacity and their adsorption characteristics for Methylene Blue (MB). The composites were characterized by Zeta potential analysis, BET analysis, X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), thermogravimetric analysis (TGA) and scanning electron microscope (SEM). The results indicate that the metal oxides have great impact on textural properties, morphology, Zeta potential and PPy polymerization on their surface, further influence the adsorption capacity of their composites. The PPy/Al2O3(C) composite owns the highest specific surface area, rougher surface and most PPy content, and show the highest monolayer adsorption capacity reaching 134.77mg/g. In the adsorption characteristic studies, isotherm investigation shows an affinity order of PPy/metal oxides of PPy/Al2O3(C)>PPy/Al2O3>PPy/SiO2(C)>PPy/SiO2>PPy/Fe3O4>PPy, stating the affinity between PPy and MB was greatly improved by metal oxide, and Al2O3 owns high affinity for MB, followed by SiO2 and Fe3O4. Kinetic data of the composites selected (PPy/SiO2(C), PPy/Al2O3(C) and PPy/Fe3O4) were described more appropriately by the pseudo-second-order model, and the order of K2 is PPy/Al2O3>PPy/SiO2>PPy/Fe3O4, further showing a fast adsorption and good affinity of PPy/Al2O3(C) for MB. The regeneration method by HCl-elution and NaOH-activation was available, and the composites selected still owned good adsorption and desorption efficiency after six adsorption-desorption cycles.

  10. Conductive metal oxide film and method of making

    SciTech Connect

    Windisch, Jr., Charles F.; Exarhos, Gregory J.

    1999-01-01

    The present invention is a method for reducing a dopant in a film of a metal oxide wherein the dopant is reduced and the first metal oxide is substantially not reduced. The method of the present invention relies upon exposing the film to reducing conditions for a predetermined time and reducing a valence of the metal from a positive valence to a zero valence and maintaining atoms with a zero valence in an atomic configuration within the lattice structure of the metal oxide. According to the present invention, exposure to reducing conditions may be achieved electrochemically or achieved in an elevated temperature gas phase.

  11. Metal oxide porous ceramic membranes with small pore sizes

    DOEpatents

    Anderson, Marc A.; Xu, Qunyin

    1991-01-01

    A method is disclosed for the production of metal oxide ceramic membranes of very small pore size. The process is particularly useful in the creation of titanium and other transition metal oxide membranes. The method utilizes a sol-gel process in which the rate of particle formation is controlled by substituting a relatively large alcohol in the metal alkoxide and by limiting the available water. Stable, transparent metal oxide ceramic membranes are created having a narrow distribution of pore size, with the pore diameter being manipulable in the range of 5 to 40 Angstroms.

  12. Metal oxide porous ceramic membranes with small pore sizes

    DOEpatents

    Anderson, Marc A.; Xu, Qunyin

    1992-01-01

    A method is disclosed for the production of metal oxide ceramic membranes of very small pore size. The process is particularly useful in the creation of titanium and other transition metal oxide membranes. The method utilizes a sol-gel process in which the rate of particle formation is controlled by substituting a relatively large alcohol in the metal alkoxide and by limiting the available water. Stable, transparent metal oxide ceramic membranes are created having a narrow distribution of pore size, with the pore diameter being manipulable in the range of 5 to 40 Angstroms.

  13. The Intriguing Properties of Transition Metal Oxides

    NASA Astrophysics Data System (ADS)

    Hoch, Michael J. R.

    2007-05-01

    Since the discovery of high-temperature superconductivity in the cuprates twenty years ago, there has been a resurgence of interest in the transition metal oxides. Work on these systems has been driven both by the fascinating properties that these materials exhibit and by potential applications in technology. A brief general review of the perovskites and their electronic structures is given. This is followed by a discussion of the properties of magnetic oxide systems ABO3 (A=La; B=Mn or Co), specifically focusing on the doped manganites (e.g. La1-x SrxMnO3) and cobaltites (e.g. La1-xSrxCoO3), in which mixed valence states and double exchange are important. Competing electron localizing and delocalizing effects result in rich phase diagrams and interesting transport properties with large magnetoresistance effects. Nanoscale phase separation has been found for a range of x values using a variety of techniques, such as nuclear magnetic resonance and neutron scattering. These discoveries have provided an increased understanding of the role of the interacting magnetic, electronic and lattice structures in these systems.

  14. The MSFC complementary metal oxide semiconductor (including multilevel interconnect metallization) process handbook

    NASA Technical Reports Server (NTRS)

    Bouldin, D. L.; Eastes, R. W.; Feltner, W. R.; Hollis, B. R.; Routh, D. E.

    1979-01-01

    The fabrication techniques for creation of complementary metal oxide semiconductor integrated circuits at George C. Marshall Space Flight Center are described. Examples of C-MOS integrated circuits manufactured at MSFC are presented with functional descriptions of each. Typical electrical characteristics of both p-channel metal oxide semiconductor and n-channel metal oxide semiconductor discrete devices under given conditions are provided. Procedures design, mask making, packaging, and testing are included.

  15. High-Pressure Thermodynamic Properties of f-electron Metals, Transition Metal Oxides, and Half-Metallic Magnets

    SciTech Connect

    Scalettar, Richard T.; Pickett, Warren E.

    2004-07-01

    This project involves research into the thermodynamic properties of f-electron metals, transition metal oxides, and half-metallic magnets at high pressure. These materials are ones in which the changing importance of electron-electron interactions as the distance between atoms is varied can tune the system through phase transitions from localized to delocalized electrons, from screened to unscreened magnetic moments, and from normal metal to one in which only a single spin specie can conduct. Three main thrusts are being pursued: (1) Mott transitions in transition metal oxides, (2) magnetism in half-metallic compounds, and (3) large volume-collapse transitions in f-band metals.

  16. High-Pressure Thermodynamic Properties of f-electron Metals, Transition Metal Oxides, and Half-Metallic Magnets

    SciTech Connect

    Richard T. Scalettar; Warren E. Pickett

    2005-08-02

    This project involves research into the thermodynamic properties of f-electron metals, transition metal oxides, and half-metallic magnets at high pressure. These materials are ones in which the changing importance of electron-electron interactions as the distance between atoms is varied can tune the system through phase transitions from localized to delocalized electrons, from screened to unscreened magnetic moments, and from normal metal to one in which only a single spin specie can conduct. Three main thrusts are being pursued: (i) Mott transitions in transition metal oxides, (ii) magnetism in half-metallic compounds, and (iii) large volume-collapse transitions in f-band metals.

  17. Solder for oxide layer-building metals and alloys

    DOEpatents

    Kronberg, James W.

    1992-01-01

    A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel. The comosition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than aproximatley 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300.degree. C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

  18. Solder for oxide layer-building metals and alloys

    DOEpatents

    Kronberg, J.W.

    1992-09-15

    A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel is disclosed. The composition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than approximately 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300 C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

  19. Laboratory studies of refractory metal oxide smokes

    NASA Technical Reports Server (NTRS)

    Nuth, Joseph A.; Nelson, R. N.; Donn, Bertram

    1989-01-01

    Studies of the properties of refractory metal oxide smokes condensed from a gas containing various combinations of SiH4, Fe(CO)5, Al(CH3)3, TiCl4, O2 and N2O in a hydrogen carrier stream at 500 K greater than T greater than 1500 K were performed. Ultraviolet, visible and infrared spectra of pure, amorphous SiO(x), FeO(x), AlO(x) and TiO(x) smokes are discussed, as well as the spectra of various co-condensed amorphous oxides, such as FE(x)SiO(y) or Fe(x)AlO(y). Preliminary studies of the changes induced in the infrared spectra of iron-containing oxide smokes by vacuum thermal annealing suggest that such materials become increasingly opaque in the near infrared with increased processing: hydration may have the opposite effect. More work on the processing of these materials is required to confirm such a trend: this work is currently in progress. Preliminary studies of the ultraviolet spectra of amorphous Si2O3 and MgSiO(x) smokes revealed no interesting features in the region from 200 to 300 nm. Studies of the ultraviolet spectra of both amorphous, hydrated and annealed SiO(x), TiO(x), AlO(x) and FeO(x) smokes are currently in progress. Finally, data on the oxygen isotopic composition of the smokes produced in the experiments are presented, which indicate that the oxygen becomes isotopically fractionated during grain condensation. Oxygen in the grains is as much as 3 percent per amu lighter than the oxygen in the original gas stream. The authors are currently conducting experiments to understand the mechanism by which fractionation occurs.

  20. Selective Metallization Induced by Laser Activation: Fabricating Metallized Patterns on Polymer via Metal Oxide Composite.

    PubMed

    Zhang, Jihai; Zhou, Tao; Wen, Liang

    2017-02-28

    Recently, metallization on polymer substrates has been given more attention due to its outstanding properties of both plastics and metals. In this study, the metal oxide composite of copper-chromium oxide (CuO·Cr2O3) was incorporated into the polymer matrix to design a good laser direct structuring (LDS) material, and the well-defined copper pattern (thickness =10 μm) was successfully fabricated through selective metallization based on 1064 nm near-infrared pulsed laser activation and electroless copper plating. We also prepared polymer composites incorporated with CuO and Cr2O3; however, these two polymer composites both had very poor capacity of selective metallization, which has no practical value for LDS technology. In our work, the key reasons causing the above results were systematically studied and elucidated using XPS, UV-vis-IR, optical microscopy, SEM, contact angle, ATR FTIR, and so on. The results showed that 54.0% Cu(2+) in the polymer composite of CuO·Cr2O3 (the amount =5 wt %) is reduced to Cu(0) (elemental copper) after laser activation (irradiation); however, this value is only 26.8% for the polymer composite of CuO (the amount =5 wt %). It was confirmed that to achieve a successful selective metallization after laser activation, not only was the new formed Cu(0) (the catalytic seeds) the crucial factor, but the number of generated Cu(0) catalytic seeds was also important. These two factors codetermined the final results of the selective metallization. The CuO·Cr2O3 is very suitable for applications of fabricating metallic patterns (e.g., metal decoration, circuit) on the inherent pure black or bright black polymer materials via LDS technology, which has a prospect of large-scale industrial applications.

  1. Exciton-Plasmon Coupling Enhancement via Metal Oxidation.

    PubMed

    Todisco, Francesco; D'Agostino, Stefania; Esposito, Marco; Fernández-Domínguez, Antonio I; De Giorgi, Milena; Ballarini, Dario; Dominici, Lorenzo; Tarantini, Iolena; Cuscuná, Massimo; Della Sala, Fabio; Gigli, Giuseppe; Sanvitto, Daniele

    2015-10-27

    In this paper, we report on the effect of metal oxidation on strong coupling interactions between silver nanostructures and a J-aggregated cyanine dye. We show that metal oxidation can sensibly affect the plexcitonic system, inducing a change in the coupling strength. In particular, we demonstrate that the presence of oxide prevents the appearance of Rabi splitting in the extinction spectra for thick spacers. In contrast, below a threshold percentage, the oxide layer results in an higher coupling strength between the plasmon and the Frenkel exciton. Contrary to common belief, a thin oxide layer seems thus to act, under certain conditions, as a coupling mediator between an emitter and a localized surface plasmon excited in a metallic nanostructure. This suggests that metal oxidation can be exploited as a means to enhance light-matter interactions in strong coupling applications.

  2. Structure, Bonding and Surface Chemistry of Metal Oxide Nanoclusters

    DTIC Science & Technology

    2015-06-23

    Rh, as well as those of vanadium oxides. In synthetic experiments, metal oxide clusters are captured from the gas phase into solution, stabilized with... clusters . Additional work has examined vanadium carbide clusters as well as metal-silicon clusters of several transition metals. These ultra-small... clusters are studied with laser desorption and electrospray ionization mass spectrometry, optical spectroscopy methods (IR, surface-enhanced Raman, UV

  3. Route to transition metal carbide nanoparticles through cyanamide and metal oxides

    SciTech Connect

    Li, P.G. Lei, M.; Tang, W.H.

    2008-12-01

    We have designed an efficient route to the synthesis of transition metal carbide nanoparticles starting from an organic reagent cyanamide and transition metal oxides. Four technologically important metal carbide nanoparticles such as tungsten carbide, niobium carbide, tantalum carbide and vanadium carbide were synthesized successfully at moderate temperatures. It is found that cyanamide is an efficient carburization reagent and that the metal oxides are completely transmitted into the corresponding carbide nanoparticles. A possible mechanism is proposed to explain the results of the reaction between cyanamide and the metal oxides.

  4. Oxidized film structure and method of making epitaxial metal oxide structure

    DOEpatents

    Gan, Shupan [Richland, WA; Liang, Yong [Richland, WA

    2003-02-25

    A stable oxidized structure and an improved method of making such a structure, including an improved method of making an interfacial template for growing a crystalline metal oxide structure, are disclosed. The improved method comprises the steps of providing a substrate with a clean surface and depositing a metal on the surface at a high temperature under a vacuum to form a metal-substrate compound layer on the surface with a thickness of less than one monolayer. The compound layer is then oxidized by exposing the compound layer to essentially oxygen at a low partial pressure and low temperature. The method may further comprise the step of annealing the surface while under a vacuum to further stabilize the oxidized film structure. A crystalline metal oxide structure may be subsequently epitaxially grown by using the oxidized film structure as an interfacial template and depositing on the interfacial template at least one layer of a crystalline metal oxide.

  5. Catalysis using hydrous metal oxide ion exchangers

    DOEpatents

    Dosch, R.G.; Stephens, H.P.; Stohl, F.V.

    1983-07-21

    In a process which is catalyzed by a catalyst comprising an active metal on a carrier, said metal being active as a catalyst for the process, an improvement is provided wherein the catalyst is a hydrous, alkali metal or alkaline earth metal titanate, zirconate, niobate or tantalate wherein alkali or alkaline earth metal cations have been exchanged with a catalytically effective amount of cations of said metal.

  6. Catalysis using hydrous metal oxide ion exchanges

    DOEpatents

    Dosch, Robert G.; Stephens, Howard P.; Stohl, Frances V.

    1985-01-01

    In a process which is catalyzed by a catalyst comprising an active metal on a carrier, said metal being active as a catalyst for the process, an improvement is provided wherein the catalyst is a hydrous, alkali metal or alkaline earth metal titanate, zirconate, niobate or tantalate wherein alkali or alkaline earth metal cations have been exchanged with a catalytically effective amount of cations of said metal.

  7. High-mobility two-dimensional electron gas in SrGeO3- and BaSnO3-based perovskite oxide heterostructures: an ab initio study.

    PubMed

    Wang, Yaqin; Tang, Wu; Cheng, Jianli; Nazir, Safdar; Yang, Kesong

    2016-11-23

    We explored the possibility of producing a high-mobility two-dimensional electron gas (2DEG) in the LaAlO3/SrGeO3 and LaGaO3/BaSnO3 heterostructures using first-principles electronic structure calculations. Our results show that the 2DEG occurs at n-type LaAlO3/SrGeO3 and LaGaO3/BaSnO3 interfaces. Compared to the prototype LaAlO3/SrTiO3, LaAlO3/SrGeO3 and LaGaO3/BaSnO3 systems yield comparable total interfacial charge carrier density but much lower electron effective mass (nearly half the value of LaAlO3/SrTiO3), thus resulting in about twice larger electron mobility and enhanced interfacial conductivity. This work demonstrates that SrGeO3 and BaSnO3 can be potential substrate materials to achieve a high-mobility 2DEG in the perovskite-oxide heterostructures.

  8. Recent applications of liquid metals featuring nanoscale surface oxides

    NASA Astrophysics Data System (ADS)

    Neumann, Taylor V.; Dickey, Michael D.

    2016-05-01

    This proceeding describes recent efforts from our group to control the shape and actuation of liquid metal. The liquid metal is an alloy of gallium and indium which is non-toxic, has negligible vapor pressure, and develops a thin, passivating surface oxide layer. The surface oxide allows the liquid metal to be patterned and shaped into structures that do not minimize interfacial energy. The surface oxide can be selectively removed by changes in pH or by applying a voltage. The surface oxide allows the liquid metal to be 3D printed to form free-standing structures. It also allows for the liquid metal to be injected into microfluidic channels and to maintain its shape within the channels. The selective removal of the oxide results in drastic changes in surface tension that can be used to control the flow behavior of the liquid metal. The metal can also wet thin, solid films of metal that accelerates droplets of the liquid along the metal traces .Here we discuss the properties and applications of liquid metal to make soft, reconfigurable electronics.

  9. Reduction of spalling in mixed metal oxide desulfurization sorbents by addition of a large promoter metal oxide

    DOEpatents

    Poston, James A.

    1997-01-01

    Mixed metal oxide pellets for removing hydrogen sulfide from fuel gas mixes derived from coal are stabilized for operation over repeated cycles of desulfurization and regeneration reactions by addition of a large promoter metal oxide such as lanthanum trioxide. The pellets, which may be principally made up of a mixed metal oxide such as zinc titanate, exhibit physical stability and lack of spalling or decrepitation over repeated cycles without loss of reactivity. The lanthanum oxide is mixed with pellet-forming components in an amount of 1 to 10 weight percent.

  10. Reduction of spalling in mixed metal oxide desulfurization sorbents by addition of a large promoter metal oxide

    DOEpatents

    Poston, J.A.

    1997-12-02

    Mixed metal oxide pellets for removing hydrogen sulfide from fuel gas mixes derived from coal are stabilized for operation over repeated cycles of desulfurization and regeneration reactions by addition of a large promoter metal oxide such as lanthanum trioxide. The pellets, which may be principally made up of a mixed metal oxide such as zinc titanate, exhibit physical stability and lack of spalling or decrepitation over repeated cycles without loss of reactivity. The lanthanum oxide is mixed with pellet-forming components in an amount of 1 to 10 weight percent.

  11. Biomimetic metal oxides for the extraction of nanoparticles from water

    NASA Astrophysics Data System (ADS)

    Mallampati, Ramakrishna; Valiyaveettil, Suresh

    2013-03-01

    Contamination of nanomaterials in the environment will pose significant health risks in the future. A viable purification method is necessary to address this problem. Here we report the synthesis and application of a series of metal oxides prepared using a biological template for the removal of nanoparticles from the aqueous environment. A simple synthesis of metal oxides such as ZnO, NiO, CuO, Co3O4 and CeO2 employing eggshell membrane (ESM) as a biotemplate is reported. The morphology of the metal oxide powders was characterized using electron microscopes and the lattice structure was established using X-ray diffraction methods. Extraction of nanoparticles from water was carried out to compare the efficiency of metal oxides. NiO showed good extraction efficiency in removing gold and silver nanoparticles from spiked water samples within an hour. Easy access and enhanced stability of metal oxides makes them interesting candidates for applications in industrial effluent treatments and water purifications.Contamination of nanomaterials in the environment will pose significant health risks in the future. A viable purification method is necessary to address this problem. Here we report the synthesis and application of a series of metal oxides prepared using a biological template for the removal of nanoparticles from the aqueous environment. A simple synthesis of metal oxides such as ZnO, NiO, CuO, Co3O4 and CeO2 employing eggshell membrane (ESM) as a biotemplate is reported. The morphology of the metal oxide powders was characterized using electron microscopes and the lattice structure was established using X-ray diffraction methods. Extraction of nanoparticles from water was carried out to compare the efficiency of metal oxides. NiO showed good extraction efficiency in removing gold and silver nanoparticles from spiked water samples within an hour. Easy access and enhanced stability of metal oxides makes them interesting candidates for applications in industrial

  12. One the influence of metal lattice diffusion on oxidation of metals and alloys

    SciTech Connect

    Gibbs, G.B.

    1981-08-01

    The influence of metal lattice diffusion on oxidation kinetics is discussed for two single cases: (i) a pure metal, where vacancies generated at the scale-metal interface diffuse to sinks within the metal; and (ii) a binary alloy of metals A and B, with A forming the more stable oxide. In the first case it is shown that vacancy effects are generally negligible. Analyses suggesting the contrary have failed to replace atom concentration gradients by the more appropriate chemical potential gradients. For the alloy, Wagner's condition for breakdown of A oxide is confirmed. It is shown that growth of A oxide cannot be controlled by diffusion of A in the metal, if B atoms can react at the scale-metal interface; scale-breakdown intervenes.

  13. Electric field effects in graphene/LaAlO{sub 3}/SrTiO{sub 3} heterostructures and nanostructures

    SciTech Connect

    Huang, Mengchen; Jnawali, Giriraj; Hsu, Jen-Feng; Dhingra, Shonali; Bi, Feng; Chen, Lu; D’Urso, Brian; Irvin, Patrick; Levy, Jeremy; Lee, Hyungwoo; Ryu, Sangwoo; Eom, Chang-Beom; Ghahari, Fereshte; Ravichandran, Jayakanth; Kim, Philip

    2015-06-01

    We report the development and characterization of graphene/LaAlO{sub 3}/SrTiO{sub 3} heterostructures. Complex-oxide heterostructures are created by pulsed laser deposition and are integrated with graphene using both mechanical exfoliation and transfer from chemical-vapor deposition on ultraflat copper substrates. Nanoscale control of the metal-insulator transition at the LaAlO{sub 3}/SrTiO{sub 3} interface, achieved using conductive atomic force microscope lithography, is demonstrated to be possible through the graphene layer. LaAlO{sub 3}/SrTiO{sub 3}-based electric field effects using a graphene top gate are also demonstrated. The ability to create functional field-effect devices provides the potential of graphene-complex-oxide heterostructures for scientific and technological advancement.

  14. Nanoscale Metal Oxide Semiconductors for Gas Sensing

    NASA Technical Reports Server (NTRS)

    Hunter, Gary W.; Evans, Laura; Xu, Jennifer C.; VanderWal, Randy L.; Berger, Gordon M.; Kulis, Michael J.

    2011-01-01

    A report describes the fabrication and testing of nanoscale metal oxide semiconductors (MOSs) for gas and chemical sensing. This document examines the relationship between processing approaches and resulting sensor behavior. This is a core question related to a range of applications of nanotechnology and a number of different synthesis methods are discussed: thermal evaporation- condensation (TEC), controlled oxidation, and electrospinning. Advantages and limitations of each technique are listed, providing a processing overview to developers of nanotechnology- based systems. The results of a significant amount of testing and comparison are also described. A comparison is made between SnO2, ZnO, and TiO2 single-crystal nanowires and SnO2 polycrystalline nanofibers for gas sensing. The TECsynthesized single-crystal nanowires offer uniform crystal surfaces, resistance to sintering, and their synthesis may be done apart from the substrate. The TECproduced nanowire response is very low, even at the operating temperature of 200 C. In contrast, the electrospun polycrystalline nanofiber response is high, suggesting that junction potentials are superior to a continuous surface depletion layer as a transduction mechanism for chemisorption. Using a catalyst deposited upon the surface in the form of nanoparticles yields dramatic gains in sensitivity for both nanostructured, one-dimensional forms. For the nanowire materials, the response magnitude and response rate uniformly increase with increasing operating temperature. Such changes are interpreted in terms of accelerated surface diffusional processes, yielding greater access to chemisorbed oxygen species and faster dissociative chemisorption, respectively. Regardless of operating temperature, sensitivity of the nanofibers is a factor of 10 to 100 greater than that of nanowires with the same catalyst for the same test condition. In summary, nanostructure appears critical to governing the reactivity, as measured by electrical

  15. Semiconductor heterostructure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold John (Inventor); Woodall, Jerry MacPherson (Inventor)

    1978-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  16. Method for converting uranium oxides to uranium metal

    DOEpatents

    Duerksen, Walter K.

    1988-01-01

    A process is described for converting scrap and waste uranium oxide to uranium metal. The uranium oxide is sequentially reduced with a suitable reducing agent to a mixture of uranium metal and oxide products. The uranium metal is then converted to uranium hydride and the uranium hydride-containing mixture is then cooled to a temperature less than -100.degree. C. in an inert liquid which renders the uranium hydride ferromagnetic. The uranium hydride is then magnetically separated from the cooled mixture. The separated uranium hydride is readily converted to uranium metal by heating in an inert atmosphere. This process is environmentally acceptable and eliminates the use of hydrogen fluoride as well as the explosive conditions encountered in the previously employed bomb-reduction processes utilized for converting uranium oxides to uranium metal.

  17. Process for making a noble metal on tin oxide catalyst

    NASA Technical Reports Server (NTRS)

    Upchurch, Billy T. (Inventor); Davis, Patricia (Inventor); Miller, Irvin M. (Inventor)

    1989-01-01

    A quantity of reagent grade tin metal or compound, chloride-free, and high-surface-area silica spheres are placed in deionized water, followed by deaerating the mixture by boiling and adding an oxidizing agent, such as nitric acid. The nitric acid oxidizes the tin to metastannic acid which coats the spheres because the acid is absorbed on the substrate. The metastannic acid becomes tin oxide upon drying and calcining. The tin-oxide coated silica spheres are then placed in water and boiled. A chloride-free precious metal compound in aqueous solution is then added to the mixture containing the spheres, and the precious metal compound is reduced to a precious metal by use of a suitable reducing agent such as formic acid. Very beneficial results were obtained using the precious metal compound tetraammine platinum(II) hydroxide.

  18. Nanostructured Metal Oxides and Sulfides for Lithium-Sulfur Batteries.

    PubMed

    Liu, Xue; Huang, Jia-Qi; Zhang, Qiang; Mai, Liqiang

    2017-05-01

    Lithium-sulfur (Li-S) batteries with high energy density and long cycle life are considered to be one of the most promising next-generation energy-storage systems beyond routine lithium-ion batteries. Various approaches have been proposed to break down technical barriers in Li-S battery systems. The use of nanostructured metal oxides and sulfides for high sulfur utilization and long life span of Li-S batteries is reviewed here. The relationships between the intrinsic properties of metal oxide/sulfide hosts and electrochemical performances of Li-S batteries are discussed. Nanostructured metal oxides/sulfides hosts used in solid sulfur cathodes, separators/interlayers, lithium-metal-anode protection, and lithium polysulfides batteries are discussed respectively. Prospects for the future developments of Li-S batteries with nanostructured metal oxides/sulfides are also discussed. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Metal oxide nanostructures by a simple hot water treatment.

    PubMed

    Saadi, Nawzat S; Hassan, Laylan B; Karabacak, Tansel

    2017-08-02

    Surfaces with metal oxide nanostructures have gained considerable interest in applications such as sensors, detectors, energy harvesting cells, and batteries. However, conventional fabrication techniques suffer from challenges that hinder wide and effective applications of such surfaces. Most of the metal oxide nanostructure synthesis methods are costly, complicated, non-scalable, environmentally hazardous, or applicable to only certain few materials. Therefore, it is crucial to develop a simple metal oxide nanostructure fabrication method that can overcome all these limitations and pave the way to the industrial application of such surfaces. Here, we demonstrate that a wide variety of metals can form metal oxide nanostructures on their surfaces after simply interacting with hot water. This method, what we call hot water treatment, offers the ability to grow metal oxide nanostructures on most of the metals in the periodic table, their compounds, or alloys by a one-step, scalable, low-cost, and eco-friendly process. In addition, our findings reveal that a "plugging" mechanism along with surface diffusion is critical in the formation of such nanostructures. This work is believed to be of importance especially for researchers working on the growth of metal oxide nanostructures and their application in functional devices.

  20. [Mechanism study of fluoride adsorption by hydrous metal oxides].

    PubMed

    Guo, Hui-Chao; Li, Wen-Jun; Chang, Zhi-Dong; Wang, Huan-Ying; Zhou, Yue

    2011-08-01

    Hydrous oxides of cerium, aluminum, nickel and copper were prepared by alkaline precipitation method. Langmuir adsorption isotherm was studied and specific surface area was measured by BET method through N2 adsorption-desorption process. IR characterization of hydrous metal oxides before and after fluoride adsorption was also studied. Results show that different hydrous metal oxides have different specific surface areas and their pore size distributions also are not all the same. Adsorption capacity is not directly dependent on the specific surface area. Isotherm study indicates that the adsorption follows Langmuir model and shows the feature of monolayer adsorption. IR study before and after fluoride adsorption shows that different hydrous metal oxides have similar adsorption sites in the same IR region as well as adsorption sites in the different IR region. The comprehensive interaction of these adsorption sites with fluoride ions results in the different adsorption capacity of different hydrous metal oxides.