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Sample records for metal oxide heterostructure

  1. Observation of complete space-charge-limited transport in metal-oxide-graphene heterostructure

    SciTech Connect

    Chen, Wei; Wang, Fei; Fang, Jingyue; Wang, Guang; Qin, Shiqiao; Zhang, Xue-Ao E-mail: xazhang@nudt.edu.cn; Wang, Chaocheng; Wang, Li E-mail: xazhang@nudt.edu.cn

    2015-01-12

    The metal-oxide-graphene heterostructures have abundant physical connotations. As one of the most important physical properties, the electric transport property of the gold-chromium oxide-graphene heterostructure has been studied. The experimental measurement shows that the conductive mechanism is dominated by the space-charge-limited transport, a kind of bulk transport of an insulator with charge traps. Combining the theoretical analysis, some key parameters such as the carrier mobility and trap energy also are obtained. The study of the characteristics of the metal-oxide-graphene heterostructures is helpful to investigate the graphene-based electronic and photoelectric devices.

  2. Topological phases in oxide heterostructures with light and heavy transition metal ions (invited)

    SciTech Connect

    Fiete, Gregory A.; Rüegg, Andreas

    2015-05-07

    Using a combination of density functional theory, tight-binding models, and Hartree-Fock theory, we predict topological phases with and without time-reversal symmetry breaking in oxide heterostructures. We consider both heterostructures containing light transition metal ions and those containing heavy transition metal ions. We find that the (111) growth direction naturally leads to favorable conditions for topological phases in both perovskite structures and pyrochlore structures. For the case of light transition metal elements, Hartree-Fock theory predicts the spin-orbit coupling is effectively enhanced by on-site multiple-orbital interactions and may drive the system through a topological phase transition, while heavy elements with intrinsically large spin-orbit coupling require much weaker or even vanishing electron interactions to bring about a topological phase.

  3. Multifunctional Oxide Heterostructures

    SciTech Connect

    Tsymbal, E Y; Dagotto, Elbio R; Eom, Professor Chang-Beom; Ramesh, Ramamoorthy

    2012-01-01

    This book is devoted to the rapidly developing field of oxide thin-films and heterostructures. Oxide materials combined with atomic-scale precision in a heterostructure exhibit an abundance of macroscopic physical properties involving the strong coupling between the electronic, spin, and structural degrees of freedom, and the interplay between magnetism, ferroelectricity, and conductivity. Recent advances in thin-film deposition and characterization techniques made possible the experimental realization of such oxide heterostructures, promising novel functionalities and device concepts.

  4. High performance supercapacitor electrodes based on metal/metal-oxide core/shell nano-heterostructures

    NASA Astrophysics Data System (ADS)

    Singh, Ashutosh Kumar; Mandal, Kalyan

    2015-06-01

    This study demonstrates the fabrication technique of novel nano-heterostructures (NHs) and their comparative study of electrochemical performance as supercapacitor electrodes. The fabricated Ni/NiO core/shell and Co-Ni/Co3O4-NiO core/shell nano-heterostructures supercapacitor electrodes offer the desired properties of macroporosity to allow facile electrolyte flow, thereby reducing device resistance and nanoporosity with large surface area to allow faster reaction kinetics. In three electrode configuration, Ni/NiO core/shell and Co-Ni/Co3O4-NiO core/shell nano-heterostructures supercapacitor electrodes exhibited specific capacitance values (731 and 2013 F g-1, respectively, at a constant current density of 2.5 A g-1), high energy (36.5 and 44.7 Wh kg-1, respectively), power density (7.5 and 5.6 kW kg-1, respectively), good capacitance retention and long cyclicality. The remarkable electrochemical property of the large surface area nano-heterostructures is demonstrated based on the effective nano-architectural design of the electrode with the coexistence of the highly redox active materials at the surface supported by highly conducting metal channel at the core for faster charge transport.

  5. Spintronic effects in metallic, semiconductor, metal oxide and metal semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Bratkovsky, A. M.

    2008-02-01

    Spintronics is a rapidly growing field focusing on phenomena and related devices essentially dependent on spin transport. Some of them are already an established part of microelectronics. We review recent theoretical and experimental advances in achieving large spin injection efficiency (polarization of current) and accumulated spin polarization. These include tunnel and giant magnetoresistance, spin-torque and spin-orbit effects on electron transport in various heterostructures. We give a microscopic description of spin tunneling through oxide and modified Schottky barriers between a ferromagnet (FM) and a semiconductor (S). It is shown that in such FM-S junctions electrons with a certain spin projection can be efficiently injected into (or extracted from) S, while electrons with the opposite spin can accumulate in S near the interface. The criterion for efficient injection is opposite to a known Rashba criterion, since the barrier should be rather transparent. In degenerate semiconductors, extraction of spin can proceed at low temperatures. We mention a few novel spin-valve ultrafast devices with small dissipated power: a magnetic sensor, a spin transistor, an amplifier, a frequency multiplier, a square-law detector and a source of polarized radiation. We also discuss effects related to spin-orbital interactions, such as the spin Hall effect (SHE) and a recently predicted positive magnetoresistance accompanying SHE. Some esoteric devices such as 'spinFET', interacting spin logic and spin-based quantum computing are discussed and problems with their realization are highlighted. We demonstrate that the so-called 'ferroelectric tunnel junctions' are unlikely to provide additional functionality because in all realistic situations the ferroelectric barrier would be split into domains by the depolarizing field.

  6. Tuning the work function in transition metal oxides and their heterostructures

    NASA Astrophysics Data System (ADS)

    Zhong, Z.; Hansmann, P.

    2016-06-01

    The development of novel functional materials in experimental labs combined with computer-based compound simulation brings the vision of materials design on a microscopic scale continuously closer to reality. For many applications interface and surface phenomena rather than bulk properties are key. One of the most fundamental qualities of a material-vacuum interface is the energy required to transfer an electron across this boundary, i.e., the work function. It is a crucial parameter for numerous applications, including organic electronics, field electron emitters, and thermionic energy converters. Being generally very resistant to degradation at high temperatures, transition metal oxides present a promising materials class for such devices. We have performed a systematic study for perovskite oxides that provides reference values and, equally important, reports on materials trends and the tunability of work functions. Our results identify and classify dependencies of the work function on several parameters including specific surface termination, surface reconstructions, oxygen vacancies, and heterostructuring.

  7. Epitaxial magnetic oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Belenky, Land J.

    Perovskite oxides exhibit a range of physical properties including insulator, semiconductor, metal, superconductor, ferromagnet and many more. Interactions between order parameters result in new properties such as the multiferroic materials. The production of artificial layered epitaxial magnetic heterostructures motivates this research. This requires atomic layer controlled growth which depends on selection of materials for their structural and chemical compatibility, preparation of substrates to achieve well-defined surfaces at the atomic level and the development of a deposition and analysis technique capable of controlling growth' at this level. We have used a pulsed laser deposition system with in situ reflection high-energy electron diffraction to produce epitaxial magnetic oxide heterostructures on lattice-matched substrates and have investigated a number of magnetic interactions. We have demonstrated an unusual antiferromagnetic interfacial exchange coupling between epitaxial bilayers of La0.67Sr0.33MnO 3 and SrRuO3 grown on (001) SrTiO3 substrates. The sign and magnitude of the exchange field depends on the cooling field. By interrupting the charge transfer at the interface with a very thin insulating layer, we have demonstrated this exchange biasing effect is related to the spin-dependent band structures of the materials. We have investigated the structural and magnetic properties of epitaxial multilayers and superlattices of manganites. These materials exhibit colossal magnetoresistance and the Curie temperature can be adjusted over a range of 100 K. We have fabricated La0.67Sr0.33MnO3/La 0.82Ba0.18MnO3 superlattices with layers as thin as 8 unit cells (32A). These superlattices have magnetic transition temperatures above 350 K and coercivities of approximately 10 Oe. Deposition techniques can effectively control the out-of-plane dimension on the nanoscale but control or lateral dimensions has proven more challenging. We have fabricated magnetic

  8. Electric field effects in transition metal oxides, their surfaces and heterostructures

    NASA Astrophysics Data System (ADS)

    Held, Karsten

    2015-03-01

    Modern computational tools such as density functional theory and its merger with dynamical mean field theory are nowadays inevitable for the modeling and understanding of oxides, their heterostructures and surfaces. In this talk, I will concentrate on the impact of electric fields, how they affect the physical properties and how to make use of them. Substantial internal electric fields are created at polar surfaces, and even for an isopolar-interface the electronic reconstruction can lead to a charge transfer and hence a dipole field. Such internal fields can be employed to efficiently separate electrons and holes in a oxide solar cell. Even if the polar dipole field is compensated by a surface reconstruction, a local surface potential remains, and makes SrTiO3 (110) the arguably simplest 2 dimensional electron gas (2DEG). External electric fields, on the other hand, can trigger ``gigantic'' responses, since correlated oxides are prone to small perturbations. For example, a field effect Mott transistor can be realized in a few layers of SrVO3 with ideal on-off (metal-insulator) switching properties; and interfacing a ferroelectric, BaTiO3, plus a 2DEG with large spin-orbit coupling, BaOsO3, allows for a giant switchable Rashba effect. Support by the ERC through Grant Agreement No. 306447 is gratefully acknowledged.

  9. Probing the structural flexibility of MOFs by constructing metal oxide@MOF-based heterostructures for size-selective photoelectrochemical response

    NASA Astrophysics Data System (ADS)

    Zhan, Wenwen; He, Yue; Guo, Jiangbin; Chen, Luning; Kong, Xiangjian; Zhao, Haixia; Kuang, Qin; Xie, Zhaoxiong; Zheng, Lansun

    2016-07-01

    It is becoming a challenge to achieve simpler characterization and wider application of flexible metal organic frameworks (MOFs) exhibiting the gate-opening or breathing behavior. Herein, we designed an intelligent MOF-based system where the gate-opening or breathing behavior of MOFs can be facially visualized in solution. Two types of metal oxide@MOF core-shell heterostructures, ZnO@ZIF-7 and ZnO@ZIF-71, were prepared using ZnO nanorods as self-sacrificial templates. The structural flexibility of both the MOFs can be easily judged from the distinct molecular-size-related formation modes and photoelectrochemical performances between the two ZnO@ZIF heterostructures. Moreover, the rotational dynamics of the flexible parts of ZIF-7 were studied by analyzing the intrinsic physical properties, such as dielectric constants, of the structure. The present work reminds us to pay particular attention to the influences of the structural flexibility of MOFs on the structure and properties of MOF-involved heterostructures in future studies.It is becoming a challenge to achieve simpler characterization and wider application of flexible metal organic frameworks (MOFs) exhibiting the gate-opening or breathing behavior. Herein, we designed an intelligent MOF-based system where the gate-opening or breathing behavior of MOFs can be facially visualized in solution. Two types of metal oxide@MOF core-shell heterostructures, ZnO@ZIF-7 and ZnO@ZIF-71, were prepared using ZnO nanorods as self-sacrificial templates. The structural flexibility of both the MOFs can be easily judged from the distinct molecular-size-related formation modes and photoelectrochemical performances between the two ZnO@ZIF heterostructures. Moreover, the rotational dynamics of the flexible parts of ZIF-7 were studied by analyzing the intrinsic physical properties, such as dielectric constants, of the structure. The present work reminds us to pay particular attention to the influences of the structural flexibility of

  10. Controlling the interface charge density in GaN-based metal-oxide-semiconductor heterostructures by plasma oxidation of metal layers

    SciTech Connect

    Hahn, Herwig Kalisch, Holger; Vescan, Andrei; Pécz, Béla; Kovács, András; Heuken, Michael

    2015-06-07

    In recent years, investigating and engineering the oxide-semiconductor interface in GaN-based devices has come into focus. This has been driven by a large effort to increase the gate robustness and to obtain enhancement mode transistors. Since it has been shown that deep interface states act as fixed interface charge in the typical transistor operating regime, it appears desirable to intentionally incorporate negative interface charge, and thus, to allow for a positive shift in threshold voltage of transistors to realise enhancement mode behaviour. A rather new approach to obtain such negative charge is the plasma-oxidation of thin metal layers. In this study, we present transmission electron microscopy and energy dispersive X-ray spectroscopy analysis as well as electrical data for Al-, Ti-, and Zr-based thin oxide films on a GaN-based heterostructure. It is shown that the plasma-oxidised layers have a polycrystalline morphology. An interfacial amorphous oxide layer is only detectable in the case of Zr. In addition, all films exhibit net negative charge with varying densities. The Zr layer is providing a negative interface charge density of more than 1 × 10{sup 13 }cm{sup –2} allowing to considerably shift the threshold voltage to more positive values.

  11. Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts

    SciTech Connect

    Szyszka, A. E-mail: adam.szyszka@pwr.wroc.pl; Haeberlen, M.; Storck, P.; Thapa, S. B.; Schroeder, T.

    2014-08-28

    Based on a novel double step oxide buffer heterostructure approach for GaN integration on Si, we present an optimized Metal-Semiconductor-Metal (MSM)-based Ultraviolet (UV) GaN photodetector system with integrated short-period (oxide/Si) Distributed Bragg Reflector (DBR) and leakage suppressing Metal-Oxide-Semiconductor (MOS) electrode contacts. In terms of structural properties, it is demonstrated by in-situ reflection high energy electron diffraction and transmission electron microscopy-energy dispersive x-ray studies that the DBR heterostructure layers grow with high thickness homogeneity and sharp interface structures sufficient for UV applications; only minor Si diffusion into the Y{sub 2}O{sub 3} films is detected under the applied thermal growth budget. As revealed by comparative high resolution x-ray diffraction studies on GaN/oxide buffer/Si systems with and without DBR systems, the final GaN layer structure quality is not significantly influenced by the growth of the integrated DBR heterostructure. In terms of optoelectronic properties, it is demonstrated that—with respect to the basic GaN/oxide/Si system without DBR—the insertion of (a) the DBR heterostructures and (b) dark current suppressing MOS contacts enhances the photoresponsivity below the GaN band-gap related UV cut-off energy by almost up to two orders of magnitude. Given the in-situ oxide passivation capability of grown GaN surfaces and the one order of magnitude lower number of superlattice layers in case of higher refractive index contrast (oxide/Si) systems with respect to classical III-N DBR superlattices, virtual GaN substrates on Si via functional oxide buffer systems are thus a promising robust approach for future GaN-based UV detector technologies.

  12. Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures

    SciTech Connect

    Xiao, Di; Zhu, Wenguang; Ran, Ying; Nagaosa, Naoto; Okamoto, Satoshi

    2011-01-01

    Topological insulators (TIs) are characterized by a non-trivial band topology driven by the spin-orbit coupling. To fully explore the fundamental science and application of TIs, material realization is indispensable. Here we predict, based on tight-binding modeling and first-principles calculations, that bilayers of perovskite-type transition-metal oxides grown along the [111] crystallographic axis are potential candidates for two-dimensional TIs. The topological band structure of these materials can be fine-tuned by changing dopant ions, substrates and external gate voltages. We predict that LaAuO$_3$ bilayers have a topologically non-trivial energy gap of about 0.15~eV, which is sufficiently large to realize the quantum spin Hall effect at room temperature. Intriguing phenomena, such as fractional quantum Hall effect, associated with the nearly flat topologically non-trivial bands found in $e_g$ systems are also discussed.

  13. Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures.

    PubMed

    Xiao, Di; Zhu, Wenguang; Ran, Ying; Nagaosa, Naoto; Okamoto, Satoshi

    2011-01-01

    Topological insulators are characterized by a non-trivial band topology driven by the spin-orbit coupling. To fully explore the fundamental science and application of topological insulators, material realization is indispensable. Here we predict, based on tight-binding modelling and first-principles calculations, that bilayers of perovskite-type transition-metal oxides grown along the [111] crystallographic axis are potential candidates for two-dimensional topological insulators. The topological band structure of these materials can be fine-tuned by changing dopant ions, substrates and external gate voltages. We predict that LaAuO(3) bilayers have a topologically non-trivial energy gap of about 0.15 eV, which is sufficiently large to realize the quantum spin Hall effect at room temperature. Intriguing phenomena, such as fractional quantum Hall effect, associated with the nearly flat topologically non-trivial bands found in e(g) systems are also discussed.

  14. Electrostatic doping in oxide heterostructures.

    NASA Astrophysics Data System (ADS)

    Demkov, Alexander A.; Lee, Jaekwang; Sai, Na

    2009-03-01

    Recent experiments on perovskite heterostructures grown by methods ranging from molecular beam epitaxy to pulsed laser deposition suggest the existence of two dimensional electron gas of high mobility at the oxide/oxide interface, and even a possibility of a superconducting state. Both p-type and n-type interfaces have been reported. However, the origin of charge in these insulating materials is still under debate. We report a first-principles study of several heterostructures where we employ the internal filed in a polar oxide LaAlO3 to demonstrate the possibility of the electrostatic doping, an effect similar to a well known polar catastrophe in e.g., III-V semiconductors. We use density functional theory at the LDA+U level. We mainly focus on the electronic structure of the oxide/oxide junctions. The results of our calculations suggest that once the critical thickness of the aluminate layer is reached the internal electric field is sufficient to produce the electrostatic doping. We will discuss simple estimates for the temperature of the superconducting transition and the role of oxygen-related defects such as vacancies in the electronic structure and thermodynamic stability of these fascinating oxide structures.

  15. General and Controllable Synthesis Strategy of Metal Oxide/TiO2 Hierarchical Heterostructures with Improved Lithium-Ion Battery Performance

    PubMed Central

    Wang, Hengguo; Ma, Delong; Huang, Xiaolei; Huang, Yun; Zhang, Xinbo

    2012-01-01

    We demonstrate a simple, efficient, yet versatile strategy for the synthesis of novel hierarchical heterostructures composed of TiO2 nanofiber stem and various metal oxides (MOs) secondary nanostructures, including Co3O4, Fe2O3, Fe3O4, and CuO, by advantageously combining the versatility of the electrospinning technique and hydrothermal growth method, for which the controllable formation process and possible formation mechanism are also investigated. Moreover, as a proof-of-concept demonstration of the functional properties of these hierarchical heterostructures, the Co3O4/TiO2 hierarchical heterostructures are investigated as the lithium-ion batteries (LIBs) anode materials for the first time, which not only delivers a high reversible capacity of 632.5 mAh g-1 and 95.3% capacity retention over 480 cycles, but also shows excellent rate capability with respect to the pristine TiO2 nanofibers. The synergetic effect between Co3O4 and TiO2 as well as the unique feature of hierarchical heterostructures are probably responsible for the enhanced electrochemical performance. PMID:23050085

  16. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas.

    PubMed

    Zhang, Kexiong; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Sang, Liwen

    2016-01-01

    The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al2O3 gate dielectric shows a drain-source current density of 0.51 mA/mm at the gate voltage of -2 V and drain bias of -15 V, an ON/OFF ratio of two orders of magnitude and effective hole mobility of 10 cm(2)/Vs at room temperature. The normal operation of MOSFET without freeze-out at 8 K further proves that the p-channel behavior is originated from the polarization-induced 2DHG. PMID:27021054

  17. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

    NASA Astrophysics Data System (ADS)

    Zhang, Kexiong; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Sang, Liwen

    2016-03-01

    The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al2O3 gate dielectric shows a drain-source current density of 0.51 mA/mm at the gate voltage of ‑2 V and drain bias of ‑15 V, an ON/OFF ratio of two orders of magnitude and effective hole mobility of 10 cm2/Vs at room temperature. The normal operation of MOSFET without freeze-out at 8 K further proves that the p-channel behavior is originated from the polarization-induced 2DHG.

  18. Charge transfer and emergent phenomena of oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Chen, Hanghui

    Charge transfer is a common phenomenon at oxide interfaces. We use first-principles calculations to show that via heterostructuring of transition metal oxides, the electronegativity difference between two dissimilar transition metal ions can lead to high level of charge transfer and induce substantial redistribution of electrons and ions. Notable examples include i) enhancing correlation effects and inducing a metal-insulator transition; ii) tailoring magnetic structures and inducing interfacial ferromagnetism; iii) engineering orbital splitting and inducing a non-cuprate single-orbital Fermi surface. Utilizing charge transfer to induce emergent electronic/magnetic/orbital properties at oxide interfaces is a robust approach. Combining charge transfer with quantum confinement and expitaxial strain provides an appealing prospect of engineering electronic structure of artificial oxide heterostructures. This research was supported by National Science Foundation under Grant No. DMR-1120296.

  19. Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

    NASA Astrophysics Data System (ADS)

    Liuan, Li; Jiaqi, Zhang; Yang, Liu; Jin-Ping, Ao

    2016-03-01

    In this paper, TiN/AlOx gated AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 °C with the contact resistance approximately 1.6 Ω·mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/AlOx gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate AlGaN/GaN MOS-HFETs. Project supported by the International Science and Technology Collaboration Program of China (Grant No. 2012DFG52260).

  20. Giant switchable Rashba effect in oxide heterostructures

    DOE PAGESBeta

    Zhong, Zhicheng; Si, Liang; Zhang, Qinfang; Yin, Wei-Guo; Yunoki, Seiji; Held, Karsten

    2015-03-01

    One of the most fundamental phenomena and a reminder of the electron’s relativistic nature is the Rashba spin splitting for broken inversion symmetry. Usually this splitting is a tiny relativistic correction. Interfacing ferroelectric BaTiO₃ and a 5d (or 4d) transition metal oxide with a large spin-orbit coupling, Ba(Os,Ir,Ru)O₃, we show that giant Rashba spin splittings are indeed possible and even controllable by an external electric field. Based on density functional theory and a microscopic tight binding understanding, we conclude that the electric field is amplified and stored as a ferroelectric Ti-O distortion which, through the network of oxygen octahedra, inducesmore » a large (Os,Ir,Ru)-O distortion. The BaTiO₃/Ba(Os,Ru,Ir)O₃ heterostructure is hence the ideal test station for switching and studying the Rashba effect and allows applications at room temperature.« less

  1. Giant switchable Rashba effect in oxide heterostructures

    SciTech Connect

    Zhong, Zhicheng; Si, Liang; Zhang, Qinfang; Yin, Wei-Guo; Yunoki, Seiji; Held, Karsten

    2015-03-01

    One of the most fundamental phenomena and a reminder of the electron’s relativistic nature is the Rashba spin splitting for broken inversion symmetry. Usually this splitting is a tiny relativistic correction. Interfacing ferroelectric BaTiO₃ and a 5d (or 4d) transition metal oxide with a large spin-orbit coupling, Ba(Os,Ir,Ru)O₃, we show that giant Rashba spin splittings are indeed possible and even controllable by an external electric field. Based on density functional theory and a microscopic tight binding understanding, we conclude that the electric field is amplified and stored as a ferroelectric Ti-O distortion which, through the network of oxygen octahedra, induces a large (Os,Ir,Ru)-O distortion. The BaTiO₃/Ba(Os,Ru,Ir)O₃ heterostructure is hence the ideal test station for switching and studying the Rashba effect and allows applications at room temperature.

  2. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

    PubMed Central

    Zhang, Kexiong; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Sang, Liwen

    2016-01-01

    The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al2O3 gate dielectric shows a drain-source current density of 0.51 mA/mm at the gate voltage of −2 V and drain bias of −15 V, an ON/OFF ratio of two orders of magnitude and effective hole mobility of 10 cm2/Vs at room temperature. The normal operation of MOSFET without freeze-out at 8 K further proves that the p-channel behavior is originated from the polarization-induced 2DHG. PMID:27021054

  3. GaN metal-oxide-semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate

    NASA Astrophysics Data System (ADS)

    Wang, Qingpeng; Ao, Jin-Ping; Wang, Pangpang; Jiang, Ying; Li, Liuan; Kawaharada, Kazuya; Liu, Yang

    2015-04-01

    GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure with a recess gate were fabricated and characterized. The device showed good pinch-off characteristics and a maximum field-effect mobility of 145.2 cm2·V-1·s-1. The effects of etching gas of Cl2 and SiCl4 were investigated in the gate recess process. SiCl4-etched devices showed higher channel mobility and lower threshold voltage. Atomic force microscope measurement was done to investigate the etching profile with different etching protection mask. Compared with photoresist, SiO2-masked sample showed lower surface roughness and better profile with stepper sidewall and weaker trenching effect resulting in higher channel mobility in the MOSFET.

  4. Core-shell heterostructured metal oxide arrays enable superior light-harvesting and hysteresis-free mesoscopic perovskite solar cells

    NASA Astrophysics Data System (ADS)

    Mahmood, Khalid; Swain, Bhabani Sankar; Amassian, Aram

    2015-07-01

    To achieve highly efficient mesoscopic perovskite solar cells (PSCs), the structure and properties of an electron transport layer (ETL) or material (ETM) have been shown to be of supreme importance. Particularly, the core-shell heterostructured mesoscopic ETM architecture has been recognized as a successful electrode design, because of its large internal surface area, superior light-harvesting efficiency and its ability to achieve fast charge transport. Here we report the successful fabrication of a hysteresis-free, 15.3% efficient PSC using vertically aligned ZnO nanorod/TiO2 shell (ZNR/TS) core-shell heterostructured ETMs for the first time. We have also added a conjugated polyelectrolyte polymer into the growth solution to promote the growth of high aspect ratio (AR) ZNRs and substantially improve the infiltration of the perovskite light absorber into the ETM. The PSCs based on the as-synthesized core-shell ZnO/TiO2 heterostructured ETMs exhibited excellent performance enhancement credited to the superior light harvesting capability, larger surface area, prolonged charge-transport pathways and lower recombination rate. The unique ETM design together with minimal hysteresis introduces core-shell ZnO/TiO2 heterostructures as a promising mesoscopic electrode approach for the fabrication of efficient PSCs.To achieve highly efficient mesoscopic perovskite solar cells (PSCs), the structure and properties of an electron transport layer (ETL) or material (ETM) have been shown to be of supreme importance. Particularly, the core-shell heterostructured mesoscopic ETM architecture has been recognized as a successful electrode design, because of its large internal surface area, superior light-harvesting efficiency and its ability to achieve fast charge transport. Here we report the successful fabrication of a hysteresis-free, 15.3% efficient PSC using vertically aligned ZnO nanorod/TiO2 shell (ZNR/TS) core-shell heterostructured ETMs for the first time. We have also added a

  5. Topological properties and correlation effects in oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Okamoto, Satoshi

    2015-03-01

    Transition-metal oxides (TMOs) have long been one of the main subjects of material science because of their novel functionalities such as high-Tc superconductivity in cuprates and the colossal magnetoresistance effect in manganites. In recent years, we have seen tremendous developments in thin film growth techniques with the atomic precision, resulting in the discovery of a variety of electronic states in TMO heterostructures. These developments motivate us to explore the possibility of novel quantum states of matter such as topological insulators (TIs) in TMO heterostructures. In this talk, I will present our systematic theoretical study on unprecedented electronic states in TMO heterostructures. An extremely simple but crucial observation is that, when grown along the [111] crystallographic axis, bilayers of perovskite TMOs form buckled honeycomb lattices of transition-metal ions, similar to graphene. Thus, with the relativistic spin-orbit coupling and proper band filling, two-dimensional TI states or spin Hall insulators are anticipated. Based on tight-binding modeling and density-functional theory calculations, possible candidate materials for TIs are identified. By means of the dynamical-mean-field theory and a slave-boson mean field theory, correlation effects, characteristics of TMOs, are also examined. I will further discuss future prospects in topological phenomena in TMO heterostructures and related systems. The author thanks D. Xiao, W. Zhu, Y. Ran, R. Arita, Y. Nomura and N. Nagaosa for their fruitful discussions and collaboration. This work is supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division.

  6. Probing structure-induced optical behavior in a new class of self-activated luminescent 0D/1D CaWO₄ metal oxide – CdSe nanocrystal composite heterostructures

    SciTech Connect

    Han, Jinkyu; McBean, Coray; Wang, Lei; Hoy, Jessica; Jaye, Cherno; Liu, Haiqing; Li, Zhuo-Qun; Sfeir, Matthew Y.; Fischer, Daniel A.; Taylor, Gordon T.; Misewich, James A.; Wong, Stanislaus S.

    2015-01-30

    In this report, we synthesize and characterize the structural and optical properties of novel heterostructures composed of (i) semiconducting nanocrystalline CdSe quantum dot (QDs) coupled with (ii) both one and zero-dimensional (1D and 0D) motifs of self-activated luminescence CaWO₄ metal oxides. Specifically, ~4 nm CdSe QDs have been anchored onto (i) high-aspect ratio 1D nanowires, measuring ~230 nm in diameter and ~3 μm in length, as well as onto (ii) crystalline 0D nanoparticles (possessing an average diameter of ~ 80 nm) of CaWO₄ through the mediation of 3-mercaptopropionic acid (MPA) as a connecting linker. Composite formation was confirmed by complementary electron microscopy and spectroscopy (i.e. IR and Raman) data. In terms of luminescent properties, our results show that our 1D and 0D heterostructures evince photoluminescence (PL) quenching and shortened PL lifetimes of CaWO₄ as compared with unbound CaWO₄. We propose that a photo-induced electron transfer process occurs from CaWO₄ to CdSe QDs, a scenario which has been confirmed by NEXAFS measurements and which highlights a decrease in the number of unoccupied orbitals in the conduction bands of CdSe QDs. By contrast, the PL signature and lifetimes of MPA-capped CdSe QDs within these heterostructures do not exhibit noticeable changes as compared with unbound MPA-capped CdSe QDs. The striking difference in optical behavior between CaWO₄ nanostructures and CdSe QDs within our heterostructures can be correlated with the relative positions of their conduction and valence energy band levels. In addition, the PL quenching behaviors for CaWO₄ within the heterostructure configuration were examined by systematically varying (i) the quantities and coverage densities of CdSe QDs as well as (ii) the intrinsic morphology (and by extension, the inherent crystallite size) of CaWO₄ itself.

  7. Rashba-Edelstein Magnetoresistance in Metallic Heterostructures

    NASA Astrophysics Data System (ADS)

    Nakayama, Hiroyasu; Kanno, Yusuke; An, Hongyu; Tashiro, Takaharu; Haku, Satoshi; Nomura, Akiyo; Ando, Kazuya

    2016-09-01

    We report the observation of magnetoresistance originating from Rashba spin-orbit coupling (SOC) in a metallic heterostructure: the Rashba-Edelstein (RE) magnetoresistance. We show that the simultaneous action of the direct and inverse RE effects in a Bi /Ag /CoFeB trilayer couples current-induced spin accumulation to the electric resistance. The electric resistance changes with the magnetic-field angle, reminiscent of the spin Hall magnetoresistance, despite the fact that bulk SOC is not responsible for the magnetoresistance. We further found that, even when the magnetization is saturated, the resistance increases with increasing the magnetic-field strength, which is attributed to the Hanle magnetoresistance in this system.

  8. Rashba-Edelstein Magnetoresistance in Metallic Heterostructures.

    PubMed

    Nakayama, Hiroyasu; Kanno, Yusuke; An, Hongyu; Tashiro, Takaharu; Haku, Satoshi; Nomura, Akiyo; Ando, Kazuya

    2016-09-01

    We report the observation of magnetoresistance originating from Rashba spin-orbit coupling (SOC) in a metallic heterostructure: the Rashba-Edelstein (RE) magnetoresistance. We show that the simultaneous action of the direct and inverse RE effects in a Bi/Ag/CoFeB trilayer couples current-induced spin accumulation to the electric resistance. The electric resistance changes with the magnetic-field angle, reminiscent of the spin Hall magnetoresistance, despite the fact that bulk SOC is not responsible for the magnetoresistance. We further found that, even when the magnetization is saturated, the resistance increases with increasing the magnetic-field strength, which is attributed to the Hanle magnetoresistance in this system. PMID:27661708

  9. Thermoelectric Properties of Complex Oxide Heterostructures

    NASA Astrophysics Data System (ADS)

    Cain, Tyler Andrew

    Thermoelectrics are a promising energy conversion technology for power generation and cooling systems. The thermal and electrical properties of the materials at the heart of thermoelectric devices dictate conversion efficiency and technological viability. Studying the fundamental properties of potentially new thermoelectric materials is of great importance for improving device performance and understanding the electronic structure of materials systems. In this dissertation, investigations on the thermoelectric properties of a prototypical complex oxide, SrTiO3, are discussed. Hybrid molecular beam epitaxy (MBE) is used to synthesize La-doped SrTiO3 thin films, which exhibit high electron mobilities and large Seebeck coefficients resulting in large thermoelectric power factors at low temperatures. Large interfacial electron densities have been observed in SrTiO3/RTiO 3 (R=Gd,Sm) heterostructures. The thermoelectric properties of such heterostructures are investigated, including the use of a modulation doping approach to control interfacial electron densities. Low-temperature Seebeck coefficients of extreme electron-density SrTiO3 quantum wells are shown to provide insight into their electronic structure.

  10. Chemical changes in carbon Nanotube-Nickel/Nickel Oxide Core/Shell nanoparticle heterostructures treated at high temperatures

    SciTech Connect

    Chopra, Nitin; McWhinney, Hylton G.; Shi Wenwu

    2011-06-15

    Heterostructures composed of carbon nanotube (CNT) coated with Ni/NiO core/shell nanoparticles (denoted as CNC heterostructures) were synthesized in a wet-chemistry and single-step synthesis route involving direct nucleation of nanoparticles on CNT surface. Two different aspects of CNC heterostructures were studied here. First, it was observed that the nanoparticle coatings were more uniform on the as-produced and non-purified CNTs compared to purified (or acid treated) CNTs. These heterostructures were characterized using electron microscopy, Raman spectroscopy, and energy dispersive spectroscopy. Second, thermal stability of CNC heterostructures was studied by annealing them in N{sub 2}-rich (O{sub 2}-lean) environment between 125 and 750 deg. C for 1 h. A detailed X-ray photoelectron spectroscopy and Raman spectroscopy analysis was performed to evaluate the effects of annealing temperatures on chemical composition, phases, and stability of the heterostructures. It was observed that the CNTs present in the heterostructures completely decomposed and core Ni nanoparticle oxidized significantly between 600 and 750 deg. C. - Research Highlights: {yields} Heterostructures composed of CNTs coated with Ni/NiO core/shell nanoparticles. {yields} Poor nanoparticle coverage on purified CNT surface compared to non-purified CNTs. {yields} CNTs in heterostructures decompose between 600 and 750 deg. C in N{sub 2}-rich atmosphere. {yields} Metallic species in heterostructures were oxidized at higher temperatures.

  11. Ferromagnetic Resonance Spin Pumping and Electrical Spin Injection in Silicon-Based Metal-Oxide-Semiconductor Heterostructures

    NASA Astrophysics Data System (ADS)

    Pu, Y.; Odenthal, P. M.; Adur, R.; Beardsley, J.; Swartz, A. G.; Pelekhov, D. V.; Flatté, M. E.; Kawakami, R. K.; Pelz, J.; Hammel, P. C.; Johnston-Halperin, E.

    2015-12-01

    We present the measurement of ferromagnetic resonance (FMR-)driven spin pumping and three-terminal electrical spin injection within the same silicon-based device. Both effects manifest in a dc spin accumulation voltage Vs that is suppressed as an applied field is rotated to the out-of-plane direction, i.e., the oblique Hanle geometry. Comparison of Vs between these two spin injection mechanisms reveals an anomalously strong suppression of FMR-driven spin pumping with increasing out-of-plane field Happz . We propose that the presence of the large ac component to the spin current generated by the spin pumping approach, expected to exceed the dc value by 2 orders of magnitude, is the origin of this discrepancy through its influence on the spin dynamics at the oxide-silicon interface. This convolution, wherein the dynamics of both the injector and the interface play a significant role in the spin accumulation, represents a new regime for spin injection that is not well described by existing models of either FMR-driven spin pumping or electrical spin injection.

  12. Inverse spin Hall effect in a complex ferromagnetic oxide heterostructure

    PubMed Central

    Wahler, Martin; Homonnay, Nico; Richter, Tim; Müller, Alexander; Eisenschmidt, Christian; Fuhrmann, Bodo; Schmidt, Georg

    2016-01-01

    We present spin pumping and inverse spin Hall effect (ISHE) in an epitaxial complex oxide heterostructure. Ferromagnetic La0.7Sr0.3MnO3 (LSMO) is used as a source of spin pumping while the spin sink exhibiting the ISHE consists of SrRuO3 (SRO). SRO is a ferromagnetic oxide with metallic conductivity, however, with a Curie temperature (TC) of 155 K, thus well below room temperature. This choice allows to perform the experiment above and below TC of the SRO and to demonstrate that SRO not only shows an ISHE of a magnitude comparable to Pt (though with opposite sign) in its non magnetic state but also exhibits a finite ISHE even 50 K below TC. PMID:27346793

  13. Inverse spin Hall effect in a complex ferromagnetic oxide heterostructure.

    PubMed

    Wahler, Martin; Homonnay, Nico; Richter, Tim; Müller, Alexander; Eisenschmidt, Christian; Fuhrmann, Bodo; Schmidt, Georg

    2016-01-01

    We present spin pumping and inverse spin Hall effect (ISHE) in an epitaxial complex oxide heterostructure. Ferromagnetic La0.7Sr0.3MnO3 (LSMO) is used as a source of spin pumping while the spin sink exhibiting the ISHE consists of SrRuO3 (SRO). SRO is a ferromagnetic oxide with metallic conductivity, however, with a Curie temperature (TC) of 155 K, thus well below room temperature. This choice allows to perform the experiment above and below TC of the SRO and to demonstrate that SRO not only shows an ISHE of a magnitude comparable to Pt (though with opposite sign) in its non magnetic state but also exhibits a finite ISHE even 50 K below TC. PMID:27346793

  14. Inverse spin Hall effect in a complex ferromagnetic oxide heterostructure

    NASA Astrophysics Data System (ADS)

    Wahler, Martin; Homonnay, Nico; Richter, Tim; Müller, Alexander; Eisenschmidt, Christian; Fuhrmann, Bodo; Schmidt, Georg

    2016-06-01

    We present spin pumping and inverse spin Hall effect (ISHE) in an epitaxial complex oxide heterostructure. Ferromagnetic La0.7Sr0.3MnO3 (LSMO) is used as a source of spin pumping while the spin sink exhibiting the ISHE consists of SrRuO3 (SRO). SRO is a ferromagnetic oxide with metallic conductivity, however, with a Curie temperature (TC) of 155 K, thus well below room temperature. This choice allows to perform the experiment above and below TC of the SRO and to demonstrate that SRO not only shows an ISHE of a magnitude comparable to Pt (though with opposite sign) in its non magnetic state but also exhibits a finite ISHE even 50 K below TC.

  15. Probing structure-induced optical behavior in a new class of self-activated luminescent 0D/1D CaWO₄ metal oxide – CdSe nanocrystal composite heterostructures

    DOE PAGESBeta

    Han, Jinkyu; McBean, Coray; Wang, Lei; Hoy, Jessica; Jaye, Cherno; Liu, Haiqing; Li, Zhuo-Qun; Sfeir, Matthew Y.; Fischer, Daniel A.; Taylor, Gordon T.; et al

    2015-01-30

    In this report, we synthesize and characterize the structural and optical properties of novel heterostructures composed of (i) semiconducting nanocrystalline CdSe quantum dot (QDs) coupled with (ii) both one and zero-dimensional (1D and 0D) motifs of self-activated luminescence CaWO₄ metal oxides. Specifically, ~4 nm CdSe QDs have been anchored onto (i) high-aspect ratio 1D nanowires, measuring ~230 nm in diameter and ~3 μm in length, as well as onto (ii) crystalline 0D nanoparticles (possessing an average diameter of ~ 80 nm) of CaWO₄ through the mediation of 3-mercaptopropionic acid (MPA) as a connecting linker. Composite formation was confirmed by complementarymore » electron microscopy and spectroscopy (i.e. IR and Raman) data. In terms of luminescent properties, our results show that our 1D and 0D heterostructures evince photoluminescence (PL) quenching and shortened PL lifetimes of CaWO₄ as compared with unbound CaWO₄. We propose that a photo-induced electron transfer process occurs from CaWO₄ to CdSe QDs, a scenario which has been confirmed by NEXAFS measurements and which highlights a decrease in the number of unoccupied orbitals in the conduction bands of CdSe QDs. By contrast, the PL signature and lifetimes of MPA-capped CdSe QDs within these heterostructures do not exhibit noticeable changes as compared with unbound MPA-capped CdSe QDs. The striking difference in optical behavior between CaWO₄ nanostructures and CdSe QDs within our heterostructures can be correlated with the relative positions of their conduction and valence energy band levels. In addition, the PL quenching behaviors for CaWO₄ within the heterostructure configuration were examined by systematically varying (i) the quantities and coverage densities of CdSe QDs as well as (ii) the intrinsic morphology (and by extension, the inherent crystallite size) of CaWO₄ itself.« less

  16. General Considerations of the Electrostatic Boundary Conditions in Oxide Heterostructures

    SciTech Connect

    Higuchi, Takuya

    2011-08-19

    When the size of materials is comparable to the characteristic length scale of their physical properties, novel functionalities can emerge. For semiconductors, this is exemplified by the 'superlattice' concept of Esaki and Tsu, where the width of the repeated stacking of different semiconductors is comparable to the 'size' of the electrons, resulting in novel confined states now routinely used in opto-electronics. For metals, a good example is magnetic/non-magnetic multilayer films that are thinner than the spin-scattering length, from which giant magnetoresistance (GMR) emerged, used in the read heads of hard disk drives. For transition metal oxides, a similar research program is currently underway, broadly motivated by the vast array of physical properties that they host. This long-standing notion has been recently invigorated by the development of atomic-scale growth and probe techniques, which enables the study of complex oxide heterostructures approaching the precision idealized in Fig. 1(a). Taking the subset of oxides derived from the perovskite crystal structure, the close lattice match across many transition metal oxides presents the opportunity, in principle, to develop a 'universal' heteroepitaxial materials system. Hand-in-hand with the continual improvements in materials control, an increasingly relevant challenge is to understand the consequences of the electrostatic boundary conditions which arise in these structures. The essence of this issue can be seen in Fig. 1(b), where the charge sequence of the sublayer 'stacks' for various representative perovskites is shown in the ionic limit, in the (001) direction. To truly 'universally' incorporate different properties using different materials components, be it magnetism, ferroelectricity, superconductivity, etc., it is necessary to access and join different charge sequences, labelled here in analogy to the designations 'group IV, III-V, II-VI' for semiconductors. As we will review, interfaces between

  17. Size control of noble metal clusters and metallic heterostructures through the reduction kinetics of metal precursors

    NASA Astrophysics Data System (ADS)

    Sevonkaev, Igor V.; Herein, Daniel; Jeske, Gerald; Goia, Dan V.

    2014-07-01

    Eight precious metal salts/complexes were reduced in propylene glycol at temperatures ranging between 110 and 170 °C. We found that the reduction temperature and the size of precipitated metallic nanoparticles formed were significantly affected by the structure and reactivity of the metal precursors. The choice of noble metal precursor offers flexibility for designing, fabricating and controlling the size of metallic heterostructures with tunable properties.Eight precious metal salts/complexes were reduced in propylene glycol at temperatures ranging between 110 and 170 °C. We found that the reduction temperature and the size of precipitated metallic nanoparticles formed were significantly affected by the structure and reactivity of the metal precursors. The choice of noble metal precursor offers flexibility for designing, fabricating and controlling the size of metallic heterostructures with tunable properties. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr03045a

  18. Topological Phases in Perovskite Oxide Heterostructures

    NASA Astrophysics Data System (ADS)

    Kim, Rokyeon; Yu, Jaejun; Jin, Hosub

    Quantum spin Hall (QSH) insulator is a new state of matter characterized by gapless edge states and insulating bulk states. Because the edge states are topologically protected and therefore robust against non-magnetic perturbations, it has a potential to be utilized in spintronics devices. Quauntum vally Hall (QVH) phase, on the other hand, is another class of topological state exhibiting valley-contrasting Berry curvature and spin splitting, which could yield novel transport properties, such as valley Hall effect and valley spin Hall effect. We propose a new kind of perovskite (111) heterostructures which can host both QSH and QVH phases with appropriate choices of composing elements. By carrying out first-principles calculations, we demonstrate that a Dirac cone emerges in a particular choice of heterostructure, and a sizable spin-orbit coupling turns the system into the QSH phase. In addition, the QVH phase with different Berry phases and spin textures in each valley is shown to be realized in the heterostructure with broken inversion symmetry. We porpose that these perovskite heterostructures can provide a feasible platform for spintronics, valleytronics, and topological engineering of the two-dimensional electron system.

  19. On the Design of Oxide Films, Nanomaterials, and Heterostructures for Solar Water Oxidation Photoanodes

    NASA Astrophysics Data System (ADS)

    Kronawitter, Coleman Xaver

    Photoelectrochemistry and its associated technologies show unique potential to facilitate the large-scale production of solar fuels—those energy-rich chemicals obtained through conversion processes driven by solar energy, mimicking the photosynthetic process of green plants. The critical component of photoelectrochemical devices designed for this purpose is the semiconductor photoelectrode, which must be optically absorptive, chemically stable, and possess the required electronic band alignment with respect to the redox couple of the electrolyte to drive the relevant electrochemical reactions. After many decades of investigation, the primary technological obstacle remains the development of photoelectrode structures capable of efficient and stable conversion of light with visible frequencies, which is abundant in the solar spectrum. Metal oxides represent one of the few material classes that can be made photoactive and remain stable to perform the required functions. The unique range of functional properties of oxides, and especially the oxides of transition metals, relates to their associated diversity of cation oxidation states, cation electronic configurations, and crystal structures. In this dissertation, the use of metal oxide films, nanomaterials, and heterostructures in photoelectrodes enabling the solar-driven oxidation of water and generation of hydrogen fuel is examined. A range of transition- and post-transition-metal oxide material systems and nanoscale architectures is presented. The first chapters present results related to electrodes based on alpha-phase iron(III) oxide, a promising visible-light-active material widely investigated for this application. Studies of porous films fabricated by physical vapor deposition reveal the importance of structural quality, as determined by the deposition substrate temperature, on photoelectrochemical performance. Heterostructures with nanoscale feature dimensionality are explored and reviewed in a later chapter

  20. Scanning probe microscopy investigation of complex-oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Bi, Feng

    Advances in the growth of precisely tailored complex-oxide heterostructures have led to new emergent behavior and associated discoveries. One of the most successful examples consists of an ultrathin layer of LaAlO 3 (LAO) deposited on TiO2-terminated SrTiO3 (STO), where a high mobility quasi-two dimensional electron liquid (2DEL) is formed at the interface. Such 2DEL demonstrates a variety of novel properties, including field tunable metal-insulator transition, superconductivity, strong spin-orbit coupling, magnetic and ferroelectric like behavior. Particularly, for 3-unit-cell (3 u.c.) LAO/STO heterostructures, it was demonstrated that a conductive atomic force microscope (c-AFM) tip can be used to "write" or "erase" nanoscale conducting channels at the interface, making LAO/STO a highly flexible platform to fabricate novel nanoelectronics. This thesis is focused on scanning probe microscopy studies of LAO/STO properties. We investigate the mechanism of c-AFM lithography over 3 u.c. LAO/STO in controlled ambient conditions by using a vacuum AFM, and find that the water molecules dissociated on the LAO surface play a critical role during the c-AFM lithography process. We also perform electro-mechanical response measurements over top-gated LAO/STO devices. Simultaneous piezoresponse force microscopy (PFM) and capacitance measurements reveal a correlation between LAO lattice distortion and interfacial carrier density, which suggests that PFM could not only serve as a powerful tool to map the carrier density at the interface but also provide insight into previously reported frequency dependence of capacitance enhancement of top-gated LAO/STO structures. To study magnetism at the LAO/STO interface, magnetic force microscopy (MFM) and magnetoelectric force microscopy (MeFM) are carried out to search for magnetic signatures that depend on the carrier density at the interface. Results demonstrate an electronicallycontrolled ferromagnetic phase on top-gated LAO

  1. Generalized Redox-Responsive Assembly of Carbon-Sheathed Metallic and Semiconducting Nanowire Heterostructures.

    PubMed

    Choi, Sinho; Kim, Jieun; Hwang, Dae Yeon; Park, Hyungmin; Ryu, Jaegeon; Kwak, Sang Kyu; Park, Soojin

    2016-02-10

    One-dimensional metallic/semiconducting materials have demonstrated as building blocks for various potential applications. Here, we report on a unique synthesis technique for redox-responsive assembled carbon-sheathed metal/semiconducting nanowire heterostructures that does not require a metal catalyst. In our approach, germanium nanowires are grown by the reduction of germanium oxide particles and subsequent self-catalytic growth during the thermal decomposition of natural gas, and simultaneously, carbon sheath layers are uniformly coated on the nanowire surface. This process is a simple, reproducible, size-controllable, and cost-effective process whereby most metal oxides can be transformed into metallic/semiconducting nanowires. Furthermore, the germanium nanowires exhibit stable chemical/thermal stability and outstanding electrochemical performance including a capacity retention of ∼96% after 1200 cycles at the 0.5-1C rate as lithium-ion battery anode. PMID:26784743

  2. High-frequency dynamics of hybrid oxide Josephson heterostructures

    NASA Astrophysics Data System (ADS)

    Komissinskiy, P.; Ovsyannikov, G. A.; Constantinian, K. Y.; Kislinski, Y. V.; Borisenko, I. V.; Soloviev, I. I.; Kornev, V. K.; Goldobin, E.; Winkler, D.

    2008-07-01

    We summarize our results on Josephson heterostructures Nb/Au/YBa2Cu3Ox that combine conventional (S) and oxide high- Tc superconductors with a dominant d -wave symmetry of the superconducting order parameter (D). The heterostructures were fabricated on (001) and (1 1 20) YBa2Cu3Ox films grown by pulsed laser deposition. The structural and surface studies of the (1 1 20) YBa2Cu3Ox thin films reveal nanofaceted surface structure with two facet domain orientations, which are attributed as (001) and (110)-oriented surfaces of YBa2Cu3Ox and result in S/D(001) and S/D(110) nanojunctions formed on the facets. Electrophysical properties of the Nb/Au/YBa2Cu3Ox heterostructures are investigated by the electrical and magnetic measurements at low temperatures and analyzed within the faceting scenario. The superconducting current-phase relation (CPR) of the heterostructures with finite first and second harmonics is derived from the Shapiro steps, which appear in the I-V curves of the heterostructures irradiated at frequencies up to 100 GHz. The experimental positions and amplitudes of the Shapiro steps are explained within the modified resistive Josephson junction model, where the second harmonic of the CPR and capacitance of the Josephson junctions are taken into account. We experimentally observe a crossover from a lumped to a distributed Josephson junction limit for the size of the heterostructures smaller than Josephson penetration depth. The effect is attributed to the variations of the harmonics of the superconducting CPR across the heterojunction, which may give rise to splintered vortices of magnetic flux quantum. Our investigations of parameters and phenomena that are specific for superconductors having d -wave symmetry of the superconducting order parameter may be of importance for applications such as high-frequency detectors and novel elements of a possible quantum computer.

  3. Optical spectroscopy of nanoscale and heterostructured oxides

    NASA Astrophysics Data System (ADS)

    Senty, Tess R.

    Through careful analysis of a material's properties, devices are continually getting smaller, faster and more efficient each day. Without a complete scientific understanding of material properties, devices cannot continue to improve. This dissertation uses optical spectroscopy techniques to understand light-matter interactions in several oxide materials with promising uses mainly in light harvesting applications. Linear absorption, photoluminescence and transient absorption spectroscopy are primarily used on europium doped yttrium vanadate nanoparticles, copper gallium oxide delafossites doped with iron, and cadmium selenide quantum dots attached to titanium dioxide nanoparticles. Europium doped yttrium vanadate nanoparticles have promising applications for linking to biomolecules. Using Fourier-transform infrared spectroscopy, it was shown that organic ligands (benzoic acid, 3-nitro 4-chloro-benzoic acid and 3,4-dihydroxybenzoic acid) can be attached to the surface of these molecules using metal-carboxylate coordination. Photoluminescence spectroscopy display little difference in the position of the dominant photoluminescence peaks between samples with different organic ligands although there is a strong decrease in their intensity when 3,4-dihydroxybenzoic acid is attached. It is shown that this strong quenching is due to the presence of high-frequency hydroxide vibrational modes within the organic linker. Ultraviolet/visible linear absorption measurements on delafossites display that by doping copper gallium oxide with iron allows for the previously forbidden fundamental gap transition to be accessed. Using tauc plots, it is shown that doping with iron lowers the bandgap from 2.8 eV for pure copper gallium oxide, to 1.7 eV for samples with 1 -- 5% iron doping. Using terahertz transient absorption spectroscopy measurements, it was also determined that doping with iron reduces the charge mobility of the pure delafossite samples. A comparison of cadmium selenide

  4. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

    PubMed Central

    Veal, Boyd W.; Kim, Seong Keun; Zapol, Peter; Iddir, Hakim; Baldo, Peter M.; Eastman, Jeffrey A.

    2016-01-01

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic activity. Here we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behaviour is dependent on interface properties and is attained without cation doping or changes in the gas environment. PMID:27283250

  5. Dynamic Feedback in Ferromagnet-Spin Hall Metal Heterostructures

    NASA Astrophysics Data System (ADS)

    Cheng, Ran; Zhu, Jian-Gang; Xiao, Di

    2016-08-01

    In ferromagnet-normal-metal heterostructures, spin pumping and spin-transfer torques are two reciprocal processes that occur concomitantly. Their interplay introduces a dynamic feedback effect interconnecting energy dissipation channels of both magnetization and current. By solving the spin diffusion process in the presence of the spin Hall effect in the normal metal, we show that the dynamic feedback gives rise to (i) a nonlinear magnetic damping that is crucial to sustain uniform steady-state oscillations of a spin Hall oscillator at large angles and (ii) a frequency-dependent spin Hall magnetoimpedance that reduces to the spin Hall magnetoresistance in the dc limit.

  6. Dynamic Feedback in Ferromagnet-Spin Hall Metal Heterostructures.

    PubMed

    Cheng, Ran; Zhu, Jian-Gang; Xiao, Di

    2016-08-26

    In ferromagnet-normal-metal heterostructures, spin pumping and spin-transfer torques are two reciprocal processes that occur concomitantly. Their interplay introduces a dynamic feedback effect interconnecting energy dissipation channels of both magnetization and current. By solving the spin diffusion process in the presence of the spin Hall effect in the normal metal, we show that the dynamic feedback gives rise to (i) a nonlinear magnetic damping that is crucial to sustain uniform steady-state oscillations of a spin Hall oscillator at large angles and (ii) a frequency-dependent spin Hall magnetoimpedance that reduces to the spin Hall magnetoresistance in the dc limit. PMID:27610880

  7. Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures

    NASA Astrophysics Data System (ADS)

    Yankowitz, Matthew; Larentis, Stefano; Kim, Kyounghwam; Xue, Jiamin; McKenzie, Devin; Huang, Shengqiang; Paggen, Marina; Ali, Mazhar; Cava, Robert; Tutuc, Emanuel; Leroy, Brian J.

    2015-03-01

    Recently, semiconducting materials in the transition metal dichalcogenide (TMD) family have gained great popularity for use in novel graphene-based heterostructure devices such as tunneling transistors, highly efficient flexible photovoltaic devices, and nonvolatile memory cells. TMDs have also been explored as alternatives to hexagonal boron nitride (hBN) as substrates for pristine graphene devices. However, their quality has thus far been significantly worse than comparable hBN devices. We examine graphene on numerous TMD substrates (MoS2, WS2, WSe2, MoTe2) with scanning tunneling microscopy and spectroscopy and find that point and line defects intrinsic to all TMD crystals (both of natural and synthetic origin) result in scattering of electrons in graphene. Our findings suggest that the quality of graphene on TMD heterostructures is limited by the intrinsic crystalline quality of the TMDs.

  8. Zinc-oxide-based nanostructured materials for heterostructure solar cells

    SciTech Connect

    Bobkov, A. A.; Maximov, A. I.; Moshnikov, V. A. Somov, P. A.; Terukov, E. I.

    2015-10-15

    Results obtained in the deposition of nanostructured zinc-oxide layers by hydrothermal synthesis as the basic method are presented. The possibility of controlling the structure and morphology of the layers is demonstrated. The important role of the procedure employed to form the nucleating layer is noted. The faceted hexagonal nanoprisms obtained are promising for the fabrication of solar cells based on oxide heterostructures, and aluminum-doped zinc-oxide layers with petal morphology, for the deposition of an antireflection layer. The results are compatible and promising for application in flexible electronics.

  9. Spirals and Skyrmions in Two Dimensional Oxide Heterostructures

    NASA Astrophysics Data System (ADS)

    Li, Xiaopeng; Liu, W. Vincent; Balents, Leon

    2014-02-01

    We construct the general free energy governing long-wavelength magnetism in two dimensional oxide heterostructures, which applies irrespective of the microscopic mechanism for magnetism. This leads, in the relevant regime of weak but non-negligible spin-orbit coupling, to a rich phase diagram containing in-plane ferromagnetic, spiral, cone, and Skyrmion lattice phases, as well as a nematic state stabilized by thermal fluctuations.

  10. Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors

    NASA Astrophysics Data System (ADS)

    Capriotti, M.; Bahat Treidel, E.; Fleury, C.; Bethge, O.; Ostermaier, C.; Rigato, M.; Lancaster, S. L. C.; Brunner, F.; Detz, H.; Hilt, O.; Würfl, J.; Pogany, D.; Strasser, G.

    2016-11-01

    We perform a comprehensive electrical transport and physical characterization of metal oxide semiconductor heterostructure field effect transistors with ZrO2 gate dielectrics, having partially (referred here as MOS-HFET) and fully (here called true-MOS-FET) recessed GaN/AlGaN/GaN barrier, giving normally-on and normally-off behavior, respectively. The mobility of the MOS-HFETs decreases with the proximity of the Coulomb scattering centers, situated at the ZrO2/AlGaN interface. The effect of the etching procedure and ZrO2 deposition on the formation of the interfacial charges, Nint, is evaluated by X-ray Photoelectron Spectroscopy and by fitting the threshold voltage values to numerical model. For the both device types, the extracted value of Nint lies within 15% around 2.8 × 1013 cm-2, which is of the order of polarization charge, showing that our low-damage three step etching procedure does not introduce extra interface states.

  11. High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistors

    NASA Astrophysics Data System (ADS)

    Lee, Jae-Gil; Kim, Hyun-Seop; Seo, Kwang-Seok; Cho, Chun-Hyung; Cha, Ho-Young

    2016-08-01

    A high quality SiO2 deposition process using a plasma enhanced chemical vapor deposition system has been developed for the gate insulator process of normally-off recessed-gate AlGaN/GaN metal-oxide-semiconductor-heterostructure field-effect transistors (MOS-HFETs). SiO2 films were deposited by using SiH4 and N2O mixtures as reactant gases. The breakdown field increased with increasing the N2O flow rate. The optimum SiH4/N2O ratio was 0.05, which resulted in a maximum breakdown field of 11 MV/cm for the SiO2 film deposited on recessed GaN surface. The deposition conditions were optimized as follows; a gas flow rate of SiH4/N2O (=27/540 sccm), a source RF power of 100 W, a pressure of 2 Torr, and a deposition temperature of 350 °C. A fabricated normally-off MOS-HFET exhibited a threshold voltage of 3.2 V, a specific on-resistance of 4.46 mΩ cm2, and a breakdown voltage of 810 V.

  12. Spirals and skyrmions in two-dimensional oxide heterostructures (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Li, Xiaopeng; Liu, W. Vincent; Balents, Leon

    2015-09-01

    Metallic interfaces between insulating oxides such as STO-LAO or STO-GTO provide a versatile platform to study two dimensional electron liquids. Numerous experiments have observed magnetism and significant spin-orbit effects in such structures. We construct the general free energy governing long-wavelength magnetism in two-dimensional oxide heterostructures, which applies irrespective of the microscopic mechanism for magnetism. This leads, in the relevant regime of weak but non-negligible spin-orbit coupling, to a rich phase diagram containing in-plane ferromagnetic, spiral, cone, and skyrmion lattice phases, as well as a nematic state stabilized by thermal fluctuations.

  13. Metal Semiconductor Heterostructures for Photocatalytic Conversion of Light Energy.

    PubMed

    Dutta, Sumit Kumar; Mehetor, Shyamal Kumar; Pradhan, Narayan

    2015-03-19

    For fast separation of the photogenerated charge carriers, metal semiconductor heterostructures have emerged as one of the leading materials in recent years. Among these, metal Au coupled with low bandgap semiconductors remain as ideal materials where both can absorb the solar light in the visible region. It is also established that on excitation, the plasmonic state of gold interacts with excited state of semiconductor and helps for the delocalization of the photogenerated electrons. Focusing these materials where electron transfer preferably occurs from semiconductor to metal Au on excitation, in this Perspective, we report the latest developments in the synthetic chemistry in designing such nano heterostructures and discuss their photocatalytic activities in organic dye degradation/reduction and/or photocatalytic water splitting for generation of hydrogen. Among these, materials such as Au-CZTS, Au-SnS, Au-Bi2S3, Au-ZnSe, and so forth are emphasized, and their formation chemistry as well as their photocatalytic activities are discussed in this Perspective. PMID:26262849

  14. Spirals and skyrmions in two dimensional oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Li, Xiaopeng; Liu, W. Vincent; Balents, Leon

    2014-03-01

    A symmetry-based general free energy governing long-wavelength magnetism in two-dimensional oxide heterostructures will be presented. This leads, in the relevant regime of weak but non-negligible spin-orbit coupling, to a rich phase diagram containing in-plane ferromagnetic, spiral, cone, and skyrmion lattice phases, as well as a nematic state stabilized by thermal fluctuations. The general conclusions are vetted by a microscopic derivation for a simple model with Rashba spin-orbit coupling. NSF PHY11-25915, NSF DMR-06809, ARO (W911NF-11-1-0230.

  15. Vertical Field-Effect Transistor Based on Graphene-Transition Metal Dichalcogenides Heterostructures

    NASA Astrophysics Data System (ADS)

    Kumar, Jatinder; Chien, Hui-Chun; Bellus, Matthew Z.; Sicilian, David L.; Aubin, Davis St.; Chiu, Hsin-Ying; Physics and Astronomy, University of Kansas Team

    2014-03-01

    The remarkable properties of graphene has made it possible to create transistors just few atoms thick. A new development was that the other two-dimensional materials can be stacked on it with atomic layer precision, creating numerous heterostructures on demand. Here, novel vertical field-effect transistor composed of graphene- transition metal dichalcogenides (TMDs) heterostructures is fabricated and characterized at various temperatures. Due to ultrathin nature of these transistors, they present the ultimate limit for electron transport in heterostructures. Tunneling and thermionic transport characteristics are studied among different graphene-TMDs heterostructures. Their electronic properties have been investigated and can be used in vast range of devices.

  16. Si-Ge interdiffusion under oxidizing conditions in epitaxial SiGe heterostructures with high compressive stress

    NASA Astrophysics Data System (ADS)

    Xia, Guangrui; Hoyt, Judy L.

    2010-03-01

    Si-Ge interdiffusion under oxidizing and inert conditions has been studied in epitaxial relaxed Si1-xGex/compressive Si1-yGey/relaxed Si1-xGex heterostructures. The interdiffusion was measured by secondary ion mass spectroscopy (SIMS) and studied using simulations. Within the SIMS accuracy, the measured Ge profiles show that oxidation has a small effect, if any, on the Si-Ge interdiffusion of these structures. These results suggest that oxidation does not accelerate Si-Ge interdiffusion significantly, which lessens process integration constraints for SiGe devices such as high mobility dual channel metal oxide semiconductor field effect transistors and heterostructure tunneling field effect transistors.

  17. THz investigations of graphene-complex-oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Jnawali, Giriraj; Chen, Lu; Irvin, Patrick; Levy, Jeremy; Ryu, Sangwoo; Eom, Chang-Beom; Ghahari, Fereshte; Ravichandran, Jayakanth; Kim, Philip

    2014-03-01

    The unique and multifaceted properties of graphene have fascinated scientists and engineers for a decade now. A new frontier in research concerns properties of graphene in the THz-IR region, where the collective excitation of graphene 2D electron gas (2DEG) into plasmonic waves has proven the salient feature.[2] Complex oxide heterostructures (e.g., LaAlO3/SrTiO3, LAO/STO) also support a 2DEG with high carrier densities and expected plasmonic behavior. A unique feature of the LAO/STO system is the ability to control the electron density with nanoscale precision.[3] In addition, a method for sourcing and detecting broadband THz emission from LAO/STO nanojunctions has been recently demonstrated.[4] Here we describe initial efforts to investigate the THz properties of graphene-complex oxide (GCO) heterostructures. We envision that the proposed graphene plasmonic devices in the GCO will help to lay the foundation for a host of powerful THz-IR technologies for signal processing, imaging, spectroscopy and chemical sensing. We gratefully acknowledge support for this work from ONR (N00014-13-1-0806) and AFOSR (FA9550-12-1-0268).

  18. Metal oxide films on metal

    DOEpatents

    Wu, Xin D.; Tiwari, Prabhat

    1995-01-01

    A structure including a thin film of a conductive alkaline earth metal oxide selected from the group consisting of strontium ruthenium trioxide, calcium ruthenium trioxide, barium ruthenium trioxide, lanthanum-strontium cobalt oxide or mixed alkaline earth ruthenium trioxides thereof upon a thin film of a noble metal such as platinum is provided.

  19. Gold nanocatalysts supported on heterostructured PbSO4-MCF mesoporous materials for CO oxidation

    SciTech Connect

    Li, Lin; Tian, Chengcheng; Chai, Songhai; Binder, Andrew J; Brown, Suree; Veith, Gabriel M; Dai, Sheng

    2014-01-01

    Metal oxides are commonly used as the supports of gold nanoparticles for catalytic CO oxidation, whereas metal salts are rarely considered suitable supports. In the present work, we developed a new kind of gold nanocatalyst supported on heterostructured PbSO4-MCF mesoporous materials that was prepared by an in situ growth method using dodecylbenzenesulfonate (SOBS) as a sulfonate precursor. It was found that an Au/PbSO4-MCF (SDBS) catalyst preheated at 300 degrees C showed high CO conversion below 100 degrees C. In addition, the stability of selected catalysts was studied as a function of time on stream. Because of the alteration of surface properties, these Au nanocatalysts were highly sinter-resistant. Published by Elsevier B.V.

  20. Nanoscale nickel oxide/nickel heterostructures for active hydrogen evolution electrocatalysis

    NASA Astrophysics Data System (ADS)

    Gong, Ming; Zhou, Wu; Tsai, Mon-Che; Zhou, Jigang; Guan, Mingyun; Lin, Meng-Chang; Zhang, Bo; Hu, Yongfeng; Wang, Di-Yan; Yang, Jiang; Pennycook, Stephen J.; Hwang, Bing-Joe; Dai, Hongjie

    2014-08-01

    Active, stable and cost-effective electrocatalysts are a key to water splitting for hydrogen production through electrolysis or photoelectrochemistry. Here we report nanoscale nickel oxide/nickel heterostructures formed on carbon nanotube sidewalls as highly effective electrocatalysts for hydrogen evolution reaction with activity similar to platinum. Partially reduced nickel interfaced with nickel oxide results from thermal decomposition of nickel hydroxide precursors bonded to carbon nanotube sidewalls. The metal ion-carbon nanotube interactions impede complete reduction and Ostwald ripening of nickel species into the less hydrogen evolution reaction active pure nickel phase. A water electrolyzer that achieves ~20 mA cm-2 at a voltage of 1.5 V, and which may be operated by a single-cell alkaline battery, is fabricated using cheap, non-precious metal-based electrocatalysts.

  1. Impact of GaN cap on charges in Al₂O₃/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

    SciTech Connect

    Ťapajna, M. Jurkovič, M.; Válik, L.; Haščík, Š.; Gregušová, D.; Kuzmík, J.; Brunner, F.; Cho, E.-M.; Hashizume, T.

    2014-09-14

    Oxide/semiconductor interface trap density (D{sub it}) and net charge of Al₂O₃/(GaN)/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) structures with and without GaN cap were comparatively analyzed using comprehensive capacitance measurements and simulations. D{sub it} distribution was determined in full band gap of the barrier using combination of three complementary capacitance techniques. A remarkably higher D{sub it} (∼5–8 × 10¹²eV⁻¹ cm⁻²) was found at trap energies ranging from EC-0.5 to 1 eV for structure with GaN cap compared to that (D{sub it} ∼ 2–3 × 10¹²eV⁻¹ cm⁻²) where the GaN cap was selectively etched away. D{sub it} distributions were then used for simulation of capacitance-voltage characteristics. A good agreement between experimental and simulated capacitance-voltage characteristics affected by interface traps suggests (i) that very high D{sub it} (>10¹³eV⁻¹ cm⁻²) close to the barrier conduction band edge hampers accumulation of free electron in the barrier layer and (ii) the higher D{sub it} centered about EC-0.6 eV can solely account for the increased C-V hysteresis observed for MOS-HEMT structure with GaN cap. Analysis of the threshold voltage dependence on Al₂O₃ thickness for both MOS-HEMT structures suggests that (i) positive charge, which compensates the surface polarization, is not necessarily formed during the growth of III-N heterostructure, and (ii) its density is similar to the total surface polarization charge of the GaN/AlGaN barrier, rather than surface polarization of the top GaN layer only. Some constraints for the positive surface compensating charge are discussed.

  2. Femtosecond control of electric currents in metallic ferromagnetic heterostructures.

    PubMed

    Huisman, T J; Mikhaylovskiy, R V; Costa, J D; Freimuth, F; Paz, E; Ventura, J; Freitas, P P; Blügel, S; Mokrousov, Y; Rasing, Th; Kimel, A V

    2016-05-01

    The idea to use not only the charge but also the spin of electrons in the operation of electronic devices has led to the development of spintronics, causing a revolution in how information is stored and processed. A novel advancement would be to develop ultrafast spintronics using femtosecond laser pulses. Employing terahertz (10(12) Hz) emission spectroscopy and exploiting the spin-orbit interaction, we demonstrate the optical generation of electric photocurrents in metallic ferromagnetic heterostructures at the femtosecond timescale. The direction of the photocurrent is controlled by the helicity of the circularly polarized light. These results open up new opportunities for realizing spintronics in the unprecedented terahertz regime and provide new insights in all-optical control of magnetism. PMID:26854566

  3. Femtosecond control of electric currents in metallic ferromagnetic heterostructures

    NASA Astrophysics Data System (ADS)

    Huisman, T. J.; Mikhaylovskiy, R. V.; Costa, J. D.; Freimuth, F.; Paz, E.; Ventura, J.; Freitas, P. P.; Blügel, S.; Mokrousov, Y.; Rasing, Th.; Kimel, A. V.

    2016-05-01

    The idea to use not only the charge but also the spin of electrons in the operation of electronic devices has led to the development of spintronics, causing a revolution in how information is stored and processed. A novel advancement would be to develop ultrafast spintronics using femtosecond laser pulses. Employing terahertz (1012 Hz) emission spectroscopy and exploiting the spin–orbit interaction, we demonstrate the optical generation of electric photocurrents in metallic ferromagnetic heterostructures at the femtosecond timescale. The direction of the photocurrent is controlled by the helicity of the circularly polarized light. These results open up new opportunities for realizing spintronics in the unprecedented terahertz regime and provide new insights in all-optical control of magnetism.

  4. Charge fractionalization in oxide heterostructures: A field-theoretical model

    NASA Astrophysics Data System (ADS)

    Karthick Selvan, M.; Panigrahi, Prasanta K.

    2016-06-01

    LaAlO3/SrTiO3 heterostructure with polar and non-polar constituents has been shown to exhibit interface metallic conductivity due to fractional charge transfer to the interface. The interface reconstruction by electron redistribution along the (001) orientation, in which half of an electron is transferred per two-dimensional unit cell to the adjacent planes, resulting in a net transfer of half of the charge to both the interface and topmost atomic planes, has been ascribed to a polar discontinuity at the interface in the polar catastrophe model. This avoids the divergence of the electrostatic potential, as the number of layers are increased, producing an oscillatory electric field and finite potential. Akin to the description of charge fractionalization in quasi-one-dimensional polyacetylene by the field-theoretic Jackiw-Rebbi model with fermions interacting with a topologically non-trivial background field, we show an analogous connection between the polar catastrophe model and the Bell-Rajaraman model, where the charge fractionalization occurs in the soliton free sector as an end effect.

  5. Metal atom oxidation laser

    DOEpatents

    Jensen, R.J.; Rice, W.W.; Beattie, W.H.

    1975-10-28

    A chemical laser which operates by formation of metal or carbon atoms and reaction of such atoms with a gaseous oxidizer in an optical resonant cavity is described. The lasing species are diatomic or polyatomic in nature and are readily produced by exchange or other abstraction reactions between the metal or carbon atoms and the oxidizer. The lasing molecules may be metal or carbon monohalides or monoxides. (auth)

  6. Metal atom oxidation laser

    DOEpatents

    Jensen, R.J.; Rice, W.W.; Beattie, W.H.

    1975-10-28

    A chemical laser which operates by formation of metal or carbon atoms and reaction of such atoms with a gaseous oxidizer in an optical resonant cavity is described. The lasing species are diatomic or polyatomic in nature and are readily produced by exchange or other abstraction reactions between the metal or carbon atoms and the oxidizer. The lasing molecules may be metal or carbon monohalides or monoxides.

  7. Sequence of hole resonances in complex oxide heterostructures.

    PubMed

    Smadici, S; Logvenov, G; Bozovic, I; Abbamonte, P

    2014-04-16

    Resonant soft x-ray scattering measurements at the O K edge on Sr2CuO4-ν/La2NiO4+δ (SCO/LNO) complex oxide superlattices show resonances for holes in the two constituent layers, in a sequence of energy levels. The observation of well defined resonances, on a superlattice with layers one unit cell thick, indicates that the resonance energy is largely unaffected by atoms outside a cluster extending half a unit cell along the c axis, consistent with calculations for bulk materials. Comparison to measurements on related superlattices confirms that the order of resonances at the O K edge reflects the order of hole ground-state energies in the heterostructure buried layers. For the SCO/LNO superlattices, the measurements show that the ground-state energies remain different in very thin SCO and LNO layers, which is a contributing factor when considering electronic reconstruction at interfaces, in addition to the areal density of ionic charges in the atomic planes. Different hole energy levels in the SCO/LNO superlattice also imply that holes do not spread into SCO from LNO layers. PMID:24675566

  8. Interface of transition metal oxides at the atomic scale

    NASA Astrophysics Data System (ADS)

    Shang, Tong-Tong; Liu, Xin-Yu; Gu, Lin

    2016-09-01

    Remarkable phenomena arise at well-defined heterostructures, composed of transition metal oxides, which is absent in the bulk counterpart, providing us a paradigm for exploring the various electron correlation effects. The functional properties of such heterostructures have attracted much attention in the microelectronic and renewable energy fields. Exotic and unexpected states of matter could arise from the reconstruction and coupling among lattice, charge, orbital and spin at the interfaces. Aberration-corrected scanning transmission electron microscopy (STEM) is a powerful tool to visualize the lattice structure and electronic structure at the atomic scale. In the present study some novel phenomena of oxide heterostructures at the atomic scale are summarized and pointed out from the perspective of electron microscopy.

  9. Van der Waals Epitaxy of Functional Oxide Heterostructures

    NASA Astrophysics Data System (ADS)

    Chu, Ying-Hao

    In the diligent pursuit of low-power consumption, multifunctional, and environmentally friendly electronics, more sophisticated requirements on functional materials are on demand. Recently, the discovery of 2D layered materials has created a revolution to this field. Pioneered by graphene, these new 2D materials exhibit abundant unusual physical phenomena that is undiscovered in bulk forms. These materials are characterized with their layer form and almost pure 2D electronic behavior. The confinement of charge and heat transport at such ultrathin planes offers possibilities to overcome the bottleneck of present device development in thickness limitation, and thus push the technologies into next generation. Van der Waals epitaxy, an epitaxial growth method to combine 2D and 3D materials, is one of current reliable manufacturing processes to fabricate 2D materials by growing these 2D materials epitaxially on 3D materials. Then, transferring the 2D materials to the substrates for practical applications. In the mean time, van der Waals epitaxy has also been used to create free-standing 3D materials by growing 3D materials on 2D materials and then removing them from 2D materials since the interfacial boding between 2D and 3D materials should be weak van der Waals bonds. In this study, we intend to take the same concept, but to integrate a family of functional materials in order to open new avenue to flexible electronics. Due to the interplay of lattice, charge, orbital, and spin degrees of freedom, correlated electrons in oxides generate a rich spectrum of competing phases and physical properties. Recently, lots of studies have suggested that oxide heterostructures provide a powerful route to create and manipulate the degrees of freedom and offer new possibilities for next generation devices, thus create a new playground for researchers to investigate novel physics and the emergence of fascinating states of condensed matter. In this talk, we use a 2D layered material as

  10. Reactive metal-oxide interfaces: A microscopic view

    NASA Astrophysics Data System (ADS)

    Picone, A.; Riva, M.; Brambilla, A.; Calloni, A.; Bussetti, G.; Finazzi, M.; Ciccacci, F.; Duò, L.

    2016-03-01

    Metal-oxide interfaces play a fundamental role in determining the functional properties of artificial layered heterostructures, which are at the root of present and future technological applications. Magnetic exchange and magnetoelectric coupling, spin filtering, metal passivation, catalytic activity of oxide-supported nano-particles are just few examples of physical and chemical processes arising at metal-oxide hybrid systems, readily exploited in working devices. These phenomena are strictly correlated with the chemical and structural characteristics of the metal-oxide interfacial region, making a thorough understanding of the atomistic mechanisms responsible of its formation a prerequisite in order to tailor the device properties. The steep compositional gradient established upon formation of metal-oxide heterostructures drives strong chemical interactions at the interface, making the metal-oxide boundary region a complex system to treat, both from an experimental and a theoretical point of view. However, once properly mastered, interfacial chemical interactions offer a further degree of freedom for tuning the material properties. The goal of the present review is to provide a summary of the latest achievements in the understanding of metal/oxide and oxide/metal layered systems characterized by reactive interfaces. The influence of the interface composition on the structural, electronic and magnetic properties will be highlighted. Particular emphasis will be devoted to the discussion of ultra-thin epitaxial oxides stabilized on highly oxidizable metals, which have been rarely exploited as oxide supports as compared to the much more widespread noble and quasi noble metallic substrates. In this frame, an extensive discussion is devoted to the microscopic characterization of interfaces between epitaxial metal oxides and the Fe(001) substrate, regarded from the one hand as a prototypical ferromagnetic material and from the other hand as a highly oxidizable metal.

  11. Fabrication and characterization of oxide-based thin film transistors, and process development for oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Lim, Wantae

    2009-12-01

    This dissertation is focused on the development of thin film transistors (TFTs) using oxide materials composed of post-transitional cations with (n-1)d 10ns0 (n≥4). The goal is to achieve high performance oxide-based TFTs fabricated at low processing temperature on either glass or flexible substrates for next generation display applications. In addition, etching mechanism and Ohmic contact formation for oxide heterostructure (ZnO/CuCrO 2) system is demonstrated. The deposition and characterization of oxide semiconductors (In 2O3-ZnO, and InGaZnO4) using a RF-magnetron sputtering system are studied. The main influence on the resistivity of the films is found to be the oxygen partial pressure in the sputtering ambient. The films remained amorphous and transparent (> 70%) at all process conditions. These films showed good transmittance at suitable conductivity for transistor fabrication. The electrical characteristics of both top- and bottom-gate type Indium Zinc Oxide (InZnO) and Indium Gallium Zinc Oxide (InGaZnO4)-based TFTs are reported. The InZnO films were favorable for depletion-mode TFTs due to their tendency to form oxygen vacancies, while enhancement-mode devices were realized with InGaZnO4 films. The InGaZnO4-based TFTs fabricated on either glass or plastic substrates at low temperature (<100°C) exhibit good electrical properties: the saturation mobility of 5--12 cm2.V-1.s-1 and threshold voltage of 0.5--2.5V. The devices are also examined as a function of aging time in order to verify long-term stability in air. The effect of gate dielectric materials on electrical properties of InGaZnO 4-based TFTs was investigated. The use of SiNx film as a gate dielectric reduces the trap density and the roughness at the channel/gate dielectric interface compared to SiO2 gate dielectric, resulting in an improvement of device parameters by reducing scattering of trapped charges at the interface. The quality of interface is shown to have large effect on TFT performance

  12. Freestanding van der Waals heterostructures of graphene and transition metal dichalcogenides.

    PubMed

    Azizi, Amin; Eichfeld, Sarah; Geschwind, Gayle; Zhang, Kehao; Jiang, Bin; Mukherjee, Debangshu; Hossain, Lorraine; Piasecki, Aleksander F; Kabius, Bernd; Robinson, Joshua A; Alem, Nasim

    2015-05-26

    Vertical stacking of two-dimensional (2D) crystals has recently attracted substantial interest due to unique properties and potential applications they can introduce. However, little is known about their microstructure because fabrication of the 2D heterostructures on a rigid substrate limits one's ability to directly study their atomic and chemical structures using electron microscopy. This study demonstrates a unique approach to create atomically thin freestanding van der Waals heterostructures-WSe2/graphene and MoS2/graphene-as ideal model systems to investigate the nucleation and growth mechanisms in heterostructures. In this study, we use transmission electron microscopy (TEM) imaging and diffraction to show epitaxial growth of the freestanding WSe2/graphene heterostructure, while no epitaxy is maintained in the MoS2/graphene heterostructure. Ultra-high-resolution aberration-corrected scanning transmission electron microscopy (STEM) shows growth of monolayer WSe2 and MoS2 triangles on graphene membranes and reveals their edge morphology and crystallinity. Photoluminescence measurements indicate a significant quenching of the photoluminescence response for the transition metal dichalcogenides on freestanding graphene, compared to those on a rigid substrate, such as sapphire and epitaxial graphene. Using a combination of (S)TEM imaging and electron diffraction analysis, this study also reveals the significant role of defects on the heterostructure growth. The direct growth technique applied here enables us to investigate the heterostructure nucleation and growth mechanisms at the atomic level without sample handling and transfer. Importantly, this approach can be utilized to study a wide spectrum of van der Waals heterostructures.

  13. Monolithic metal oxide transistors.

    PubMed

    Choi, Yongsuk; Park, Won-Yeong; Kang, Moon Sung; Yi, Gi-Ra; Lee, Jun-Young; Kim, Yong-Hoon; Cho, Jeong Ho

    2015-04-28

    We devised a simple transparent metal oxide thin film transistor architecture composed of only two component materials, an amorphous metal oxide and ion gel gate dielectric, which could be entirely assembled using room-temperature processes on a plastic substrate. The geometry cleverly takes advantage of the unique characteristics of the two components. An oxide layer is metallized upon exposure to plasma, leading to the formation of a monolithic source-channel-drain oxide layer, and the ion gel gate dielectric is used to gate the transistor channel effectively at low voltages through a coplanar gate. We confirmed that the method is generally applicable to a variety of sol-gel-processed amorphous metal oxides, including indium oxide, indium zinc oxide, and indium gallium zinc oxide. An inverter NOT logic device was assembled using the resulting devices as a proof of concept demonstration of the applicability of the devices to logic circuits. The favorable characteristics of these devices, including (i) the simplicity of the device structure with only two components, (ii) the benign fabrication processes at room temperature, (iii) the low-voltage operation under 2 V, and (iv) the excellent and stable electrical performances, together support the application of these devices to low-cost portable gadgets, i.e., cheap electronics. PMID:25777338

  14. Graphene oxide/graphene vertical heterostructure electrodes for highly efficient and flexible organic light emitting diodes.

    PubMed

    Jia, S; Sun, H D; Du, J H; Zhang, Z K; Zhang, D D; Ma, L P; Chen, J S; Ma, D G; Cheng, H M; Ren, W C

    2016-05-19

    The relatively high sheet resistance, low work function and poor compatibility with hole injection layers (HILs) seriously limit the applications of graphene as transparent conductive electrodes (TCEs) for organic light emitting diodes (OLEDs). Here, a graphene oxide/graphene (GO/G) vertical heterostructure is developed as TCEs for high-performance OLEDs, by directly oxidizing the top layer of three-layer graphene films with ozone treatment. Such GO/G heterostructure electrodes show greatly improved optical transmittance, a large work function, high stability, and good compatibility with HIL materials (MoO3 in this work). Moreover, the conductivity of the heterostructure is not sacrificed compared to the pristine three-layer graphene electrodes, but is significantly higher than that of pristine two-layer graphene films. In addition to high flexibility, OLEDs with different emission colors based on the GO/G heterostructure TCEs show much better performance than those based on indium tin oxide (ITO) anodes. Green OLEDs with GO/G heterostructure electrodes have the maximum current efficiency and power efficiency, as high as 82.0 cd A(-1) and 98.2 lm W(-1), respectively, which are 36.7% (14.8%) and 59.2% (15.0%) higher than those with pristine graphene (ITO) anodes. These findings open up the possibility of using graphene for next generation high-performance flexible and wearable optoelectronics with high stability. PMID:27153523

  15. Graphene oxide/graphene vertical heterostructure electrodes for highly efficient and flexible organic light emitting diodes.

    PubMed

    Jia, S; Sun, H D; Du, J H; Zhang, Z K; Zhang, D D; Ma, L P; Chen, J S; Ma, D G; Cheng, H M; Ren, W C

    2016-05-19

    The relatively high sheet resistance, low work function and poor compatibility with hole injection layers (HILs) seriously limit the applications of graphene as transparent conductive electrodes (TCEs) for organic light emitting diodes (OLEDs). Here, a graphene oxide/graphene (GO/G) vertical heterostructure is developed as TCEs for high-performance OLEDs, by directly oxidizing the top layer of three-layer graphene films with ozone treatment. Such GO/G heterostructure electrodes show greatly improved optical transmittance, a large work function, high stability, and good compatibility with HIL materials (MoO3 in this work). Moreover, the conductivity of the heterostructure is not sacrificed compared to the pristine three-layer graphene electrodes, but is significantly higher than that of pristine two-layer graphene films. In addition to high flexibility, OLEDs with different emission colors based on the GO/G heterostructure TCEs show much better performance than those based on indium tin oxide (ITO) anodes. Green OLEDs with GO/G heterostructure electrodes have the maximum current efficiency and power efficiency, as high as 82.0 cd A(-1) and 98.2 lm W(-1), respectively, which are 36.7% (14.8%) and 59.2% (15.0%) higher than those with pristine graphene (ITO) anodes. These findings open up the possibility of using graphene for next generation high-performance flexible and wearable optoelectronics with high stability.

  16. Engineering SrTiO3 /LaAlO3 heterostructures thicknessthrough a metallic capping layer electrodes

    NASA Astrophysics Data System (ADS)

    Iori, Federico

    The possibility to achieve conducting and superconducting properties at the interface between two bulk insulator oxides as SrTiO3 (STO) and LaAlO3 (LAO) in 2004 has wide opened the route toward the discovery and control of broad functional emerging properties in different oxides heterostructures. Nonetheless the STO/LAO system still present not clarified questions concerning the possibility to control the presence of the 2DEG at the interface. In this work we present our theoretical results supported by experimental measurementsconcerning the possibility to tune the critical thickness of the LAO topmost layer through the deposition of a metallic capping layer at the surface. Our ab initio Density Functional Theory calculations show how different metallic contact can lead to a reduction of the LAO critical thickness of 4 u.c. still preserving the 2D electronic gas at the interface. UNRAVEL Marie Curie project.

  17. Semiconductor-halfmetal-metal transition and magnetism of bilayer graphene nanoribbons/hexagonal boron nitride heterostructure

    NASA Astrophysics Data System (ADS)

    Ilyasov, V. V.; Meshi, B. C.; Nguyen, V. C.; Ershov, I. V.; Nguyen, D. C.

    2014-12-01

    The paper presents the results of ab initio study of electronic structure modulation and edge magnetism in the antiferromagnetic (AF) bilayer zigzag graphene nanoribbons (AF-BZGNR)/hexagonal boron nitride (h-BN(0001)) semiconductor heterostructure induced with transverse external electric field (Eext) and nanomechanical compression (extension), performed within the framework of the density functional theory using Grimme's DFT(PBE)-D2 scheme. For the first time we established critical values of Eext and interlayer distance in the bilayer for the BZGNR/h-BN(0001) heterostructure providing for semiconductor-halfmetal-metal phase transition for one of the electron spin configurations. We discovered the effect of preserved local magnetic moment (0.3μB) of edge carbon atoms of the lower (buffer) graphene nanoribbon during nanomechanical uniaxial compression (or extension) of the BZGNR/h-BN(0001) semiconductor heterostructure. It has been demonstrated that magnetic properties of the AF-BZGNR/h-BN(0001) semiconductor heterostructure can be controlled using Eext. In particular, the local magnetic moment of edge carbon atoms decreases by 10% at a critical value of the positive potential. We have established that local magnetic moments and band gaps can be altered in a wide range using nanomechanical uniaxial compression and Eext, thus making the AF-BZGNR/h-BN(0001) semiconductor heterostructure potentially promising for nanosensors, spin filters, and spintronics applications.

  18. Template-assisted synthesis of III-nitride and metal-oxide nano-heterostructures using low-temperature atomic layer deposition for energy, sensing, and catalysis applications (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Biyikli, Necmi; Ozgit-Akgun, Cagla; Eren, Hamit; Haider, Ali; Uyar, Tamer; Kayaci, Fatma; Guler, Mustafa Ozgur; Garifullin, Ruslan; Okyay, Ali K.; Ulusoy, Gamze M.; Goldenberg, Eda

    2015-08-01

    Recent experimental research efforts on developing functional nanostructured III-nitride and metal-oxide materials via low-temperature atomic layer deposition (ALD) will be reviewed. Ultimate conformality, a unique propoerty of ALD process, is utilized to fabricate core-shell and hollow tubular nanostructures on various nano-templates including electrospun nanofibrous polymers, self-assembled peptide nanofibers, metallic nanowires, and multi-wall carbon nanotubes (MWCNTs). III-nitride and metal-oxide coatings were deposited on these nano-templates via thermal and plasma-enhanced ALD processes with thickness values ranging from a few mono-layers to 40 nm. Metal-oxide materials studied include ZnO, TiO2, HfO2, ZrO2, and Al2O3. Standard ALD growth recipes were modified so that precursor molecules have enough time to diffuse and penetrate within the layers/pores of the nano-template material. As a result, uniform and conformal coatings on high-surface area nano-templates were demonstrated. Substrate temperatures were kept below 200C and within the self-limiting ALD window, so that temperature-sensitive template materials preserved their integrity III-nitride coatings were applied to similar nano-templates via plasma-enhanced ALD (PEALD) technique. AlN, GaN, and InN thin-film coating recipes were optimized to achieve self-limiting growth with deposition temperatures as low as 100C. BN growth took place only for >350C, in which precursor decomposition occured and therefore growth proceeded in CVD regime. III-nitride core-shell and hollow tubular single and multi-layered nanostructures were fabricated. The resulting metal-oxide and III-nitride core-shell and hollow nano-tubular structures were used for photocatalysis, dye sensitized solar cell (DSSC), energy storage and chemical sensing applications. Significantly enhanced catalysis, solar efficiency, charge capacity and sensitivity performance are reported. Moreover, core-shell metal-oxide and III-nitride materials

  19. Metal oxide-polymer composites

    NASA Technical Reports Server (NTRS)

    Wellinghoff, Stephen T. (Inventor)

    1994-01-01

    A method of making metal oxide clusters in a single stage by reacting a metal oxide with a substoichiometric amount of an acid in the presence of an oxide particle growth terminator and solubilizer. A method of making a ceramer is also disclosed in which the metal oxide clusters are reacted with a functionalized polymer. The resultant metal oxide clusters and ceramers are also disclosed.

  20. Metal oxide-polymer composites

    NASA Technical Reports Server (NTRS)

    Wellinghoff, Stephen T. (Inventor)

    1997-01-01

    A method of making metal oxide clusters in a single stage by reacting a metal oxide with a substoichiometric amount of an acid in the presence of an oxide particle growth terminator and solubilizer. A method of making a ceramer is also disclosed in which the metal oxide clusters are reacted with a functionalized polymer. The resultant metal oxide clusters and ceramers are also disclosed.

  1. Nanoscale semiconductor-insulator-metal core/shell heterostructures: facile synthesis and light emission

    NASA Astrophysics Data System (ADS)

    Li, Gong Ping; Chen, Rui; Guo, Dong Lai; Wong, Lai Mun; Wang, Shi Jie; Sun, Han Dong; Wu, Tom

    2011-08-01

    Controllably constructing hierarchical nanostructures with distinct components and designed architectures is an important theme of research in nanoscience, entailing novel but reliable approaches of bottom-up synthesis. Here, we report a facile method to reproducibly create semiconductor-insulator-metal core/shell nanostructures, which involves first coating uniform MgO shells onto metal oxide nanostructures in solution and then decorating them with Au nanoparticles. The semiconductor nanowire core can be almost any material and, herein, ZnO, SnO2 and In2O3 are used as examples. We also show that linear chains of short ZnO nanorods embedded in MgO nanotubes and porous MgO nanotubes can be obtained by taking advantage of the reduced thermal stability of the ZnO core. Furthermore, after MgO shell-coating and the appropriate annealing treatment, the intensity of the ZnO near-band-edge UV emission becomes much stronger, showing a 25-fold enhancement. The intensity ratio of the UV/visible emission can be increased further by decorating the surface of the ZnO/MgO nanowires with high-density plasmonic Au nanoparticles. These heterostructured semiconductor-insulator-metal nanowires with tailored morphologies and enhanced functionalities have great potential for use as nanoscale building blocks in photonic and electronic applications.Controllably constructing hierarchical nanostructures with distinct components and designed architectures is an important theme of research in nanoscience, entailing novel but reliable approaches of bottom-up synthesis. Here, we report a facile method to reproducibly create semiconductor-insulator-metal core/shell nanostructures, which involves first coating uniform MgO shells onto metal oxide nanostructures in solution and then decorating them with Au nanoparticles. The semiconductor nanowire core can be almost any material and, herein, ZnO, SnO2 and In2O3 are used as examples. We also show that linear chains of short ZnO nanorods embedded in

  2. Effect of rare earth metal on the spin-orbit torque in magnetic heterostructures

    NASA Astrophysics Data System (ADS)

    Ueda, Kohei; Pai, Chi-Feng; Tan, Aik Jun; Mann, Maxwell; Beach, Geoffrey S. D.

    2016-06-01

    We report the effect of the rare earth metal Gd on current-induced spin-orbit torques (SOTs) in perpendicularly magnetized Pt/Co/Gd heterostructures, characterized using harmonic measurements and spin-torque ferromagnetic resonance (ST-FMR). By varying the Gd metal layer thickness from 0 nm to 8 nm, harmonic measurements reveal a significant enhancement of the effective fields generated from the Slonczewski-like and field-like torques. ST-FMR measurements confirm an enhanced effective spin Hall angle and show a corresponding increase in the magnetic damping constant with increasing Gd thickness. These results suggest that Gd plays an active role in generating SOTs in these heterostructures. Our finding may lead to spin-orbitronics device application such as non-volatile magnetic random access memory, based on rare earth metals.

  3. Three-dimensional heterostructure of metallic nanoparticles and carbon nanotubes as potential nanofiller

    NASA Astrophysics Data System (ADS)

    Kim, Whi Dong; Huh, Jun Young; Ahn, Ji Young; Lee, Jae Beom; Lee, Dongyun; Hong, Suck Won; Kim, Soo Hyung

    2012-03-01

    The effect of the dimensionality of metallic nanoparticle-and carbon nanotube-based fillers on the mechanical properties of an acrylonitrile butadiene styrene (ABS) polymer matrix was examined. ABS composite films, reinforced with low dimensional metallic nanoparticles (MNPs, 0-D) and carbon nanotubes (CNTs, 1-D) as nanofillers, were fabricated by a combination of wet phase inversion and hot pressing. The tensile strength and elongation of the ABS composite were increased by 39% and 6%, respectively, by adding a mixture of MNPs and CNTs with a total concentration of 2 wt%. However, the tensile strength and elongation of the ABS composite were found to be significantly increased by 62% and 55%, respectively, upon addition of 3-D heterostructures with a total concentration of 2 wt%. The 3-D heterostructures were composed of multiple CNTs grown radially on the surface of MNP cores, resembling a sea urchin. The mechanical properties of the ABS/3-D heterostructured nanofiller composite films were much improved compared to those of an ABS/mixture of 0-D and 1-D nanofillers composite films at various filler concentrations. This suggests that the 3-D heterostructure of the MNPs and CNTs plays a key role as a strong reinforcing agent in supporting the polymer matrix and simultaneously serves as a discrete force-transfer medium to transfer the loaded tension throughout the polymer matrix.

  4. Extracting metals directly from metal oxides

    DOEpatents

    Wai, Chien M.; Smart, Neil G.; Phelps, Cindy

    1997-01-01

    A method of extracting metals directly from metal oxides by exposing the oxide to a supercritical fluid solvent containing a chelating agent is described. Preferably, the metal is an actinide or a lanthanide. More preferably, the metal is uranium, thorium or plutonium. The chelating agent forms chelates that are soluble in the supercritical fluid, thereby allowing direct removal of the metal from the metal oxide. In preferred embodiments, the extraction solvent is supercritical carbon dioxide and the chelating agent is selected from the group consisting of .beta.-diketones, halogenated .beta.-diketones, phosphinic acids, halogenated phosphinic acids, carboxylic acids, halogenated carboxylic acids, and mixtures thereof. In especially preferred embodiments, at least one of the chelating agents is fluorinated. The method provides an environmentally benign process for removing metals from metal oxides without using acids or biologically harmful solvents. The chelate and supercritical fluid can be regenerated, and the metal recovered, to provide an economic, efficient process.

  5. Extracting metals directly from metal oxides

    DOEpatents

    Wai, C.M.; Smart, N.G.; Phelps, C.

    1997-02-25

    A method of extracting metals directly from metal oxides by exposing the oxide to a supercritical fluid solvent containing a chelating agent is described. Preferably, the metal is an actinide or a lanthanide. More preferably, the metal is uranium, thorium or plutonium. The chelating agent forms chelates that are soluble in the supercritical fluid, thereby allowing direct removal of the metal from the metal oxide. In preferred embodiments, the extraction solvent is supercritical carbon dioxide and the chelating agent is selected from the group consisting of {beta}-diketones, halogenated {beta}-diketones, phosphinic acids, halogenated phosphinic acids, carboxylic acids, halogenated carboxylic acids, and mixtures thereof. In especially preferred embodiments, at least one of the chelating agents is fluorinated. The method provides an environmentally benign process for removing metals from metal oxides without using acids or biologically harmful solvents. The chelate and supercritical fluid can be regenerated, and the metal recovered, to provide an economic, efficient process. 4 figs.

  6. Half Metallic Digital Ferromagnetic Heterostructure Composed of a (Delta)-doped Layer of Mn in Si

    SciTech Connect

    Qian, M C; Fong, C Y; Liu, K; Pickett, W E; Pask, J E; Yang, L H

    2006-05-30

    The authors propose and investigate the properties of a digital ferromagnetic heterostructure (DFH) consisting of a {delta}-doped layer of Mn in Si, using ab initio electronic-structure methods. They find that (1) ferromagnetic order of the Mn layer is energetically favorable relative to antiferromagnetic, and (2) the heterostructure is a two-dimensional half metallic system. The metallic behavior is contributed by three majority-spin bands originating from hybridized Mn-d and nearest-neighbor Si-p states, and the corresponding carriers are responsible for the ferromagnetic order in the Mn layer. The minority-spin channel has a calculated semiconducting gap of 0.25 eV. Analysis of the total and partial densities of states, band structure, Fermi surfaces and associated charge density reveals the marked two-dimensional nature of the half metallicity. The band lineup is found to be favorable for retaining the half metal character to near the Curie temperature (T{sub C}). Being Si based and possibly having a high T{sub C} as suggested by an experiment on dilutely doped Mn in Si, the heterostructure may be of special interest for integration into mature Si technologies for spintronic applications.

  7. Atomic layer epitaxy of superconducting oxides and heterostructures. Final report

    SciTech Connect

    Chang, R.P.; Marks, T.J.

    1998-06-30

    This project focuses on optimizing/understanding the growth and properties of YBCO, TBCCO, and lattice-matched dielectric films as well as YBCO superlattices by MOCVD and POMBE. Emphasis is on bulk film properties as well as film growth, interface evolution, and in situ studies of film growth processes. The objective of this program is to create via novel means and to understand the properties of interfacial growth regions between films of high-temperature superconducting (HTS) materials and insulating metal oxides. Improving the nature of such interfaces is a crucial barrier which must be surmounted before HTS materials can be successfully incorporated on a large scale into a myriad of advanced active and passive electronic device technologies. In addition, low melting-point advanced precursors are to be designed and synthesized for large scale HTS production. Studies of vapor transport properties and stabilities are carried out to assure that these precursors are of HTS manufacturing quality.

  8. Graphene oxide/graphene vertical heterostructure electrodes for highly efficient and flexible organic light emitting diodes

    NASA Astrophysics Data System (ADS)

    Jia, S.; Sun, H. D.; Du, J. H.; Zhang, Z. K.; Zhang, D. D.; Ma, L. P.; Chen, J. S.; Ma, D. G.; Cheng, H. M.; Ren, W. C.

    2016-05-01

    The relatively high sheet resistance, low work function and poor compatibility with hole injection layers (HILs) seriously limit the applications of graphene as transparent conductive electrodes (TCEs) for organic light emitting diodes (OLEDs). Here, a graphene oxide/graphene (GO/G) vertical heterostructure is developed as TCEs for high-performance OLEDs, by directly oxidizing the top layer of three-layer graphene films with ozone treatment. Such GO/G heterostructure electrodes show greatly improved optical transmittance, a large work function, high stability, and good compatibility with HIL materials (MoO3 in this work). Moreover, the conductivity of the heterostructure is not sacrificed compared to the pristine three-layer graphene electrodes, but is significantly higher than that of pristine two-layer graphene films. In addition to high flexibility, OLEDs with different emission colors based on the GO/G heterostructure TCEs show much better performance than those based on indium tin oxide (ITO) anodes. Green OLEDs with GO/G heterostructure electrodes have the maximum current efficiency and power efficiency, as high as 82.0 cd A-1 and 98.2 lm W-1, respectively, which are 36.7% (14.8%) and 59.2% (15.0%) higher than those with pristine graphene (ITO) anodes. These findings open up the possibility of using graphene for next generation high-performance flexible and wearable optoelectronics with high stability.The relatively high sheet resistance, low work function and poor compatibility with hole injection layers (HILs) seriously limit the applications of graphene as transparent conductive electrodes (TCEs) for organic light emitting diodes (OLEDs). Here, a graphene oxide/graphene (GO/G) vertical heterostructure is developed as TCEs for high-performance OLEDs, by directly oxidizing the top layer of three-layer graphene films with ozone treatment. Such GO/G heterostructure electrodes show greatly improved optical transmittance, a large work function, high stability

  9. In-plane graphene/boron-nitride heterostructures as an efficient metal-free electrocatalyst for the oxygen reduction reaction.

    PubMed

    Sun, Qiao; Sun, Caixia; Du, Aijun; Dou, Shixue; Li, Zhen

    2016-08-01

    Exploiting metal-free catalysts for the oxygen reduction reaction (ORR) and understanding their catalytic mechanisms are vital for the development of fuel cells (FCs). Our study has demonstrated that in-plane heterostructures of graphene and boron nitride (G/BN) can serve as an efficient metal-free catalyst for the ORR, in which the C-N interfaces of G/BN heterostructures act as reactive sites. The formation of water at the heterointerface is both energetically and kinetically favorable via a four-electron pathway. Moreover, the water formed can be easily released from the heterointerface, and the catalytically active sites can be regenerated for the next cycle. Since G/BN heterostructures with controlled domain sizes have been successfully synthesized in recent reports (e.g. Nat. Nanotechnol., 2013, 8, 119), our results highlight the great potential of such heterostructures as a promising metal-free catalyst for the ORR in FCs. PMID:27396486

  10. Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures

    SciTech Connect

    Kim, Bongjun; Jang, Seonpil; Dodabalapur, Ananth; Geier, Michael L.; Prabhumirashi, Pradyumna L.; Hersam, Mark C.

    2014-02-10

    We report ambipolar field-effect transistors (FETs) consisting of inkjet printed semiconductor bilayer heterostructures utilizing semiconducting single-walled carbon nanotubes (SWCNTs) and amorphous zinc tin oxide (ZTO). The bilayer structure allows for electron transport to occur principally in the amorphous oxide layer and hole transport to occur exclusively in the SWCNT layer. This results in balanced electron and hole mobilities exceeding 2 cm{sup 2} V{sup −1} s{sup −1} at low operating voltages (<5 V) in air. We further show that the SWCNT-ZTO hybrid ambipolar FETs can be integrated into functional inverter circuits that display high peak gain (>10). This work provides a pathway for realizing solution processable, inkjet printable, large area electronic devices, and systems based on SWCNT-amorphous oxide heterostructures.

  11. Electronic structures and optical properties of realistic transition metal dichalcogenide heterostructures from first principles

    NASA Astrophysics Data System (ADS)

    Komsa, Hannu-Pekka; Krasheninnikov, Arkady V.

    2013-08-01

    We calculate from first principles the electronic structure and optical properties of a number of transition metal dichalcogenide (TMD) bilayer heterostructures consisting of MoS2 layers sandwiched with WS2, MoSe2, MoTe2, BN, or graphene sheets. Contrary to previous works, the systems are constructed in such a way that the unstrained lattice constants of the constituent incommensurate monolayers are retained. We find strong interaction between the Γ-point states in all TMD/TMD heterostructures, which can lead to an indirect gap. On the other hand, states near the K point remain as in the monolayers. When TMDs are paired with BN or graphene layers, the interaction around the Γ-point is negligible, and the electronic structure resembles that of two independent monolayers. Calculations of optical properties of the MoS2/WS2 system show that, even when the valence- and conduction-band edges are located in different layers, the mixing of optical transitions is minimal, and the optical characteristics of the monolayers are largely retained in these heterostructures. The intensity of interlayer transitions is found to be negligibly small, a discouraging result for engineering the optical gap of TMDs by heterostructuring.

  12. Synthesis, optical and electrochemical properties of ZnO nanowires/graphene oxide heterostructures

    PubMed Central

    2013-01-01

    Large-scale vertically aligned ZnO nanowires with high crystal qualities were fabricated on thin graphene oxide films via a low temperature hydrothermal method. Room temperature photoluminescence results show that the ultraviolet emission of nanowires grown on graphene oxide films was greatly enhanced and the defect-related visible emission was suppressed, which can be attributed to the improved crystal quality and possible electron transfer between ZnO and graphene oxide. Electrochemical property measurement results demonstrated that the ZnO nanowires/graphene oxide have large integral area of cyclic voltammetry loop, indicating that such heterostructure is promising for application in supercapacitors. PMID:23522184

  13. Modular synthesis of a dual metal-dual semiconductor nano-heterostructure

    DOE PAGESBeta

    Amirav, Lilac; Oba, Fadekemi; Aloni, Shaul; Alivisatos, A. Paul

    2015-04-29

    Reported is the design and modular synthesis of a dual metal-dual semiconductor heterostructure with control over the dimensions and placement of its individual components. Analogous to molecular synthesis, colloidal synthesis is now evolving into a series of sequential synthetic procedures with separately optimized steps. Here we detail the challenges and parameters that must be considered when assembling such a multicomponent nanoparticle, and their solutions.

  14. In-plane graphene/boron-nitride heterostructures as an efficient metal-free electrocatalyst for the oxygen reduction reaction

    NASA Astrophysics Data System (ADS)

    Sun, Qiao; Sun, Caixia; Du, Aijun; Dou, Shixue; Li, Zhen

    2016-07-01

    Exploiting metal-free catalysts for the oxygen reduction reaction (ORR) and understanding their catalytic mechanisms are vital for the development of fuel cells (FCs). Our study has demonstrated that in-plane heterostructures of graphene and boron nitride (G/BN) can serve as an efficient metal-free catalyst for the ORR, in which the C-N interfaces of G/BN heterostructures act as reactive sites. The formation of water at the heterointerface is both energetically and kinetically favorable via a four-electron pathway. Moreover, the water formed can be easily released from the heterointerface, and the catalytically active sites can be regenerated for the next cycle. Since G/BN heterostructures with controlled domain sizes have been successfully synthesized in recent reports (e.g. Nat. Nanotechnol., 2013, 8, 119), our results highlight the great potential of such heterostructures as a promising metal-free catalyst for the ORR in FCs.Exploiting metal-free catalysts for the oxygen reduction reaction (ORR) and understanding their catalytic mechanisms are vital for the development of fuel cells (FCs). Our study has demonstrated that in-plane heterostructures of graphene and boron nitride (G/BN) can serve as an efficient metal-free catalyst for the ORR, in which the C-N interfaces of G/BN heterostructures act as reactive sites. The formation of water at the heterointerface is both energetically and kinetically favorable via a four-electron pathway. Moreover, the water formed can be easily released from the heterointerface, and the catalytically active sites can be regenerated for the next cycle. Since G/BN heterostructures with controlled domain sizes have been successfully synthesized in recent reports (e.g. Nat. Nanotechnol., 2013, 8, 119), our results highlight the great potential of such heterostructures as a promising metal-free catalyst for the ORR in FCs. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr03288e

  15. Metal Oleate Induced Etching and Growth of Semiconductor Nanocrystals, Nanorods, and Their Heterostructures.

    PubMed

    Oh, Nuri; Shim, Moonsub

    2016-08-24

    Unexpected etching of nanocrystals, nanorods, and their heterostructures by one of the most commonly used metal precursors, metal oleates, is reported. Zn oleate is shown to etch CdS nanorods anisotropically, where the length decreases without a significant change in the diameter. Sodium oleate enhances the etch rate, whereas oleic acid alone does not cause etching, indicating the importance of the countercation on the rate of oleate induced etching. Subsequent addition of Se precursors to the partially etched nanorods in Zn oleate solution can lead to epitaxial growth of CdSe particles rather than the expected ZnSe growth, despite an excess amount of Zn precursors being present. The composition of this epitaxial growth can be varied from CdSe to ZnSe, depending on the amount of excess oleic acid or the reaction temperature. Similar tuning of composition can be observed when starting with collinear CdSe/CdS/CdSe rod/rod/rod heterostructures and spherical CdS (or CdSe/CdS core/shell) nanocrystals. Conversion of collinear rod/rod/rod structures to barbells and interesting rod growth from nearly spherical particles among other structures can also result due to the initial etching effect of metal oleates. These observations have important implications on our understanding of nanocrystal heterostructure synthesis and open up new routes to varying the composition and morphology of these materials. PMID:27485673

  16. Approach to multifunctional device platform with epitaxial graphene on transition metal oxide

    PubMed Central

    Park, Jeongho; Back, Tyson; Mitchel, William C.; Kim, Steve S.; Elhamri, Said; Boeckl, John; Fairchild, Steven B.; Naik, Rajesh; Voevodin, Andrey A.

    2015-01-01

    Heterostructures consisting of two-dimensional materials have shown new physical phenomena, novel electronic and optical properties, and new device concepts not observed in bulk material systems or purely three dimensional heterostructures. These new effects originated mostly from the van der Waals interaction between the different layers. Here we report that a new optical and electronic device platform can be provided by heterostructures of 2D graphene with a metal oxide (TiO2). Our novel direct synthesis of graphene/TiO2 heterostructure is achieved by C60 deposition on transition Ti metal surface using a molecular beam epitaxy approach and O2 intercalation method, which is compatible with wafer scale growth of heterostructures. As-grown heterostructures exhibit inherent photosensitivity in the visible light spectrum with high photo responsivity. The photo sensitivity is 25 times higher than that of reported graphene photo detectors. The improved responsivity is attributed to optical transitions between O 2p orbitals in the valence band of TiO2 and C 2p orbitals in the conduction band of graphene enabled by Coulomb interactions at the interface. In addition, this heterostructure provides a platform for realization of bottom gated graphene field effect devices with graphene and TiO2 playing the roles of channel and gate dielectric layers, respectively. PMID:26395160

  17. Controllable synthesis of metal selenide heterostructures mediated by Ag2Se nanocrystals acting as catalysts

    NASA Astrophysics Data System (ADS)

    Zhou, Jiangcong; Huang, Feng; Xu, Ju; Wang, Yuansheng

    2013-09-01

    Ag2Se nanocrystals were demonstrated to be novel semiconductor mediators, or in other word catalysts, for the growth of semiconductor heterostructures in solution. This is a result of the unique feature of Ag2Se as a fast ion conductor, allowing foreign cations to dissolve and then to heterogrow the second phase. Using Ag2Se nanocrystals as catalysts, dimeric metal selenide heterostructures such as Ag2Se-CdSe and Ag2Se-ZnSe, and even multi-segment heterostructures such as Ag2Se-CdSe-ZnSe and Ag2Se-ZnSe-CdSe, were successfully synthesized. Several interesting features were found in the Ag2Se based heterogrowth. At the initial stage of heterogrowth, a layer of the second phase forms on the surface of an Ag2Se nanosphere, with a curved junction interface between the two phases. With further growth of the second phase, the Ag2Se nanosphere tends to flatten the junction surface by modifying its shape from sphere to hemisphere in order to minimize the conjunct area and thus the interfacial energy. Notably, the crystallographic relationship of the two phases in the heterostructure varies with the lattice parameters of the second phase, in order to reduce the lattice mismatch at the interface. Furthermore, a small lattice mismatch at the interface results in a straight rod-like second phase, while a large lattice mismatch would induce a tortuous product. The reported results may provide a new route for developing novel selenide semiconductor heterostructures which are potentially applicable in optoelectronic, biomedical, photovoltaic and catalytic fields.Ag2Se nanocrystals were demonstrated to be novel semiconductor mediators, or in other word catalysts, for the growth of semiconductor heterostructures in solution. This is a result of the unique feature of Ag2Se as a fast ion conductor, allowing foreign cations to dissolve and then to heterogrow the second phase. Using Ag2Se nanocrystals as catalysts, dimeric metal selenide heterostructures such as Ag2Se-CdSe and Ag2Se

  18. Electrical permittivity driven metal-insulator transition in heterostructures of nonpolar Mott and band insulators

    NASA Astrophysics Data System (ADS)

    Omori, Yukiko; Rüegg, Andreas; Sigrist, Manfred

    2014-10-01

    Metallic interfaces between insulating perovskites are often observed in heterostructures combining polar and nonpolar materials. In these systems, the polar discontinuity across the interface may drive an electronic reconstruction inducing free carriers at the interface. Here, we theoretically show that a metallic interface between a Mott and a band insulator can also form in the absence of a polar discontinuity. The condition for the appearance of such a metallic state is consistent with the classical Mott criterion: the metallic state is stable if the screening length falls below the effective Bohr radius of a particle-hole pair. In this case, the metallic state bears a remarkable similarity to the one found in polar/nonpolar heterostructures. On the other hand, if the screening length approaches the size of the effective Bohr radius, particles and holes are bound to each other resulting in an overall insulating phase. We analyze this metal-insulator transition, which is tunable by the dielectric constant, in the framework of the slave-boson mean-field theory for a lattice model with both on-site and long-range Coulomb interactions. We discuss ground-state properties and transport coefficients, which we derive in the relaxation-time approximation. Interestingly, we find that the metal-insulator transition is accompanied by a strong enhancement of the Seebeck coefficient in the band-insulator region in the vicinity of the interface. The implications of our theoretical findings for various experimental systems such as nonpolar (110) interfaces are also discussed.

  19. Theoretical Study of the Effect of an AlGaAs Double Heterostructure on Metal-Semiconductor-Metal Photodetector Performance

    NASA Technical Reports Server (NTRS)

    Salem, Ali F.; Smith, Arlynn W.; Brennan, Kevin F.

    1994-01-01

    The impulse and square-wave input response of different GaAs metal-semiconductor-metal photodetector (MSM) designs are theoretically examined using a two dimensional drift- diffusion numerical calculation with a thermionic-field emission boundary condition model for the heterojunctions. The rise time and the fall time of the output signal current are calculated for a simple GaAs, epitaxially grown, MSM device as well as for various double-heterostructure barrier devices. The double heterostructure devices consist of an AlGaAs layer sandwiched between the top GaAs active, absorption layer and the bottom GaAs substrate. The effect of the depth of the AlGaAs layer on the speed and responsivity of the MSM devices is examined. It is found that there is an optimal depth, at fixed applied bias, of the AlGaAs layer within the structure that provides maximum responsivity at minimal compromise in speed.

  20. Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness

    SciTech Connect

    Wang Cong; Jin Kuijuan; Zhao Ruiqiang; Lu Huibin; Guo Haizhong; Ge Chen; He Meng; Wang Can; Yang Guozhen

    2011-05-02

    One order larger photovoltage is obtained with critical thicknesses of La{sub 0.9}Sr{sub 0.1}MnO{sub 3} films in both kinds of heterostructures of La{sub 0.9}Sr{sub 0.1}MnO{sub 3}/SrTiO{sub 3} (0.8 wt % Nb-doped) and La{sub 0.9}Sr{sub 0.1}MnO{sub 3}/Si fabricated at various oxygen pressures. Our self-consistent calculation reveals that the critical thickness of the La{sub 0.9}Sr{sub 0.1}MnO{sub 3} film with the ultimate value of photovoltage is just the thickness of the depletion layer of La{sub 0.9}Sr{sub 0.1}MnO{sub 3} in both heterojunctions, respectively.

  1. Enhancing triplet superconductivity by the proximity to a singlet superconductor in oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Horsdal, Mats; Khaliullin, Giniyat; Hyart, Timo; Rosenow, Bernd

    2016-06-01

    We show how in principle a coherent coupling between two superconductors of opposite parity can be realized in a three-layer oxide heterostructure. Due to strong intraionic spin-orbit coupling in the middle layer, singlet Cooper pairs are converted into triplet ones and vice versa. This results in a large enhancement of the triplet superconductivity, persisting well above the native triplet critical temperature.

  2. Novel Photocatalytic Metal Oxides

    SciTech Connect

    Smith, Robert W.; Mei, Wai-Ning; Sabirianov, Renat; Wang, Lu

    2012-08-31

    The principal short-term objective is to develop improved solid-state photocatalysts for the decomposition of water into hydrogen gas using ultraviolet and visible solar radiation. We will pursue our objective by modeling candidate metal oxides through computer simulations followed by synthesis of promising candidates. We will characterize samples through standard experimental techniques. The long-term objective is to provide a more efficient source of hydrogen gas for fixed-site hydrogen fuel cells, particularly for energy users in remote locations.

  3. Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures.

    PubMed

    Chen, Xiaolong; Wu, Zefei; Xu, Shuigang; Wang, Lin; Huang, Rui; Han, Yu; Ye, Weiguang; Xiong, Wei; Han, Tianyi; Long, Gen; Wang, Yang; He, Yuheng; Cai, Yuan; Sheng, Ping; Wang, Ning

    2015-01-01

    The metal-insulator transition is one of the remarkable electrical properties of atomically thin molybdenum disulphide. Although the theory of electron-electron interactions has been used in modelling the metal-insulator transition in molybdenum disulphide, the underlying mechanism and detailed transition process still remain largely unexplored. Here we demonstrate that the vertical metal-insulator-semiconductor heterostructures built from atomically thin molybdenum disulphide are ideal capacitor structures for probing the electron states. The vertical configuration offers the added advantage of eliminating the influence of large impedance at the band tails and allows the observation of fully excited electron states near the surface of molybdenum disulphide over a wide excitation frequency and temperature range. By combining capacitance and transport measurements, we have observed a percolation-type metal-insulator transition, driven by density inhomogeneities of electron states, in monolayer and multilayer molybdenum disulphide. In addition, the valence band of thin molybdenum disulphide layers and their intrinsic properties are accessed.

  4. Research Update: Strategies for efficient photoelectrochemical water splitting using metal oxide photoanodes

    SciTech Connect

    Cho, Seungho; Jang, Ji-Wook; Lee, Kun-Hong E-mail: ce20047@postech.ac.kr; Lee, Jae Sung E-mail: ce20047@postech.ac.kr

    2014-01-01

    Photoelectrochemical (PEC) water splitting to hydrogen is an attractive method for capturing and storing the solar energy in the form of chemical energy. Metal oxides are promising photoanode materials due to their low-cost synthetic routes and higher stability than other semiconductors. In this paper, we provide an overview of recent efforts to improve PEC efficiencies via applying a variety of fabrication strategies to metal oxide photoanodes including (i) size and morphology-control, (ii) metal oxide heterostructuring, (iii) dopant incorporation, (iv) attachments of quantum dots as sensitizer, (v) attachments of plasmonic metal nanoparticles, and (vi) co-catalyst coupling. Each strategy highlights the underlying principles and mechanisms for the performance enhancements.

  5. Fabrication and characterization of copper oxide (CuO)–gold (Au)–titania (TiO{sub 2}) and copper oxide (CuO)–gold (Au)–indium tin oxide (ITO) nanowire heterostructures

    SciTech Connect

    Chopra, Nitin; Shi, Wenwu; Lattner, Andrew

    2014-10-15

    Nanoscale heterostructures composed of standing copper oxide nanowires decorated with Au nanoparticles and shells of titania and indium tin oxide were fabricated. The fabrication process involved surfactant-free and wet-chemical nucleation of gold nanoparticles on copper oxide nanowires followed by a line-of-sight sputtering of titania or indium tin oxide. The heterostructures were characterized using high resolution electron microscopy, diffraction, and energy dispersive spectroscopy. The interfaces, morphologies, crystallinity, phases, and chemical compositions were analyzed. The process of direct nucleation of gold nanoparticles on copper oxide nanoparticles resulted in low energy interface with aligned lattice for both the components. Coatings of polycrystalline titania or amorphous indium tin oxide were deposited on standing copper oxide nanowire–gold nanoparticle heterostructures. Self-shadowing effect due to standing nanowire heterostructures was observed for line-of-sight sputter deposition of titania or indium tin oxide coatings. Finally, the heterostructures were studied using Raman spectroscopy and ultraviolet–visible spectroscopy, including band gap energy analysis. Tailing in the band gap energy at longer wavelengths (or lower energies) was observed for the nanowire heterostructures. - Highlights: • Heterostructures comprised of CuO nanowires coated with Au nanoparticles. • Au nanoparticles exhibited nearly flat and low energy interface with nanowire. • Heterostructures were further sputter-coated with oxide shell of TiO{sub 2} or ITO. • The process resulted in coating of polycrystalline TiO{sub 2} and amorphous ITO shell.

  6. Thermal oxidation of Si/SiGe heterostructures for use in quantum dot qubits

    NASA Astrophysics Data System (ADS)

    Neyens, Samuel F.; Foote, Ryan H.; Knapp, T. J.; McJunkin, Thomas; Savage, D. E.; Lagally, M. G.; Coppersmith, S. N.; Eriksson, M. A.

    Here we demonstrate dry thermal oxidation of a Si/SiGe heterostructure at 700°C and use a Hall bar device to measure the mobility after oxidation to be 43,000 cm2V-1s-1 at a carrier density of 4.1 ×1011 cm-2. Surprisingly, we find no significant reduction in mobility compared with an Al2O3 device made with atomic layer deposition on the same heterostructure, indicating thermal oxidation can be used to process Si/SiGe quantum dot devices. This result provides a path for investigating improvements to the gate oxide in Si/SiGe qubit devices, whose performance is believed to be limited by charge noise in the oxide layer. This work was supported in part by ARO (W911NF-12-0607) and NSF (DMR-1206915 and PHY-1104660). Development and maintenance of the growth facilities used for fabricating samples is supported by DOE (DE-FG02-03ER46028). This research utilized NSF-supported shared facilities at the University of Wisconsin-Madison.

  7. Half-metallic digital ferromagnetic heterostructure composed of a delta-doped layer of Mn in Si.

    PubMed

    Qian, M C; Fong, C Y; Liu, Kai; Pickett, W E; Pask, J E; Yang, L H

    2006-01-20

    We propose and investigate the properties of a digital ferromagnetic heterostructure consisting of a delta-doped layer of Mn in Si, using ab initio electronic-structure methods. We find that (i) ferromagnetic order of the Mn layer is energetically favorable relative to antiferromagnetic, and (ii) the heterostructure is a two-dimensional half-metallic system. The metallic behavior is contributed by three majority-spin bands originating from hybridized Mn-d and nearest-neighbor Si-p states, and the corresponding carriers are responsible for the ferromagnetic order in the Mn layer. The minority-spin channel has a calculated semiconducting gap of 0.25 eV. The band lineup is found to be favorable for retaining the half-metal character to near the Curie temperature. This kind of heterostructure may be of special interest for integration into mature Si technologies for spintronic applications.

  8. Heterostructures of phosphorene and transition metal dichalcogenides for excitonic solar cells: A first-principles study

    NASA Astrophysics Data System (ADS)

    Ganesan, Vellayappan Dheivanayagam S./O.; Linghu, Jiajun; Zhang, Chun; Feng, Yuan Ping; Shen, Lei

    2016-03-01

    Using the many-body perturbation GW theory, we study the quasiparticle conduction-band offsets of phosphorene, a two-dimensional atomic layer of black phosphorus, and transition-metal dichalcogenides (TMDs). The calculated large exciton binding energies of phosphorene and TMDs indicate that their type-II heterostructures are suitable for excitonic thin-film solar cell applications. Our results show that these heterojunctions have a potential maximum power conversion efficiency of up to 12%, which can be further enhanced up to 20% by strain engineering.

  9. Lateral Heterostructures of Monolayer Transition Metal Dichalcogenides: a First-principles Study

    NASA Astrophysics Data System (ADS)

    Wu, Meng; Cao, Ting; Louie, Steven G.

    Using first-principles calculations, we investigate the electronic structure and optical properties of lateral heterostructures consisting of different monolayer transition metal dichalcogenides (TMDs). We find that the spin-orbital coupling effect plays an important role in modifying the ground-state electronic structure and excited-state properties such as optical responses. The anisotropy of optical absorption is investigated including local-field effects. This work was supported by NSF Grant No. DMR15-1508412, the U.S. DOE under Contract No. DE-AC02-05CH11231. Computational resources have been provided by DOE at Lawrence Berkeley National Laboratory's NERSC facility.

  10. Tunable absorption in heterostructures composed of a highly absorptive metallic film and Fibonacci fractal photonic crystals

    NASA Astrophysics Data System (ADS)

    Qiao, Wei; Sun, Jie; Du, Gui-Qiang

    2016-03-01

    We have theoretically investigated the anomalous optical properties of heterostructures composed of a highly absorptive metal film and a truncated Fibonacci fractal photonic crystal. It is found that one or multiple highly reflected peaks, even enhanced transmission narrowband, can be realized in the near-complete absorption broadband, where the photonic crystals are selected with various Fibonacci sequences or a given sequence as the basic unit. These properties are significant to design important reflection or transmission optical devices in the visible and near-infrared ranges.

  11. MBE Growth of Ferromagnetic Metal/Compound Semiconductor Heterostructures for Spintronics

    ScienceCinema

    Palmstrom, Chris [University of California, Santa Barbara, California, United States

    2016-07-12

    Electrical transport and spin-dependent transport across ferromagnet/semiconductor contacts is crucial in the realization of spintronic devices. Interfacial reactions, the formation of non-magnetic interlayers, and conductivity mismatch have been attributed to low spin injection efficiency. MBE has been used to grow epitaxial ferromagnetic metal/GA(1-x)AL(x)As heterostructures with the aim of controlling the interfacial structural, electronic, and magnetic properties. In situ, STM, XPS, RHEED and LEED, and ex situ XRD, RBS, TEM, magnetotransport, and magnetic characterization have been used to develop ferromagnetic elemental and metallic compound/compound semiconductor tunneling contacts for spin injection. The efficiency of the spin polarized current injected from the ferromagnetic contact has been determined by measuring the electroluminescence polarization of the light emitted from/GA(1-x)AL(x)As light-emitting diodes as a function of applied magnetic field and temperature. Interfacial reactions during MBE growth and post-growth anneal, as well as the semiconductor device band structure, were found to have a dramatic influence on the measured spin injection, including sign reversal. Lateral spin-transport devices with epitaxial ferromagnetic metal source and drain tunnel barrier contacts have been fabricated with the demonstration of electrical detection and the bias dependence of spin-polarized electron injection and accumulation at the contacts. This talk emphasizes the progress and achievements in the epitaxial growth of a number of ferromagnetic compounds/III-V semiconductor heterostructures and the progress towards spintronic devices.

  12. Band engineering in transition metal dichalcogenides: Stacked versus lateral heterostructures

    NASA Astrophysics Data System (ADS)

    Guo, Yuzheng; Robertson, John

    2016-06-01

    We calculate a large difference in the band alignments for transition metal dichalcogenide (TMD) heterojunctions when arranged in the stacked layer or lateral (in-plane) geometries, using direct supercell calculations. The stacked case follows the unpinned limit of the electron affinity rule, whereas the lateral geometry follows the strongly pinned limit of alignment of charge neutrality levels. TMDs therefore provide one of the few clear tests of band alignment models, whereas three-dimensional semiconductors give less stringent tests because of accidental chemical trends in their properties.

  13. The modulation of Schottky barriers of metal-MoS2 contacts via BN-MoS2 heterostructures.

    PubMed

    Su, Jie; Feng, Liping; Zhang, Yan; Liu, Zhengtang

    2016-06-22

    Using first-principles calculations within density functional theory, we systematically studied the effect of BN-MoS2 heterostructure on the Schottky barriers of metal-MoS2 contacts. Two types of FETs are designed according to the area of the BN-MoS2 heterostructure. Results show that the vertical and lateral Schottky barriers in all the studied contacts, irrespective of the work function of the metal, are significantly reduced or even vanish when the BN-MoS2 heterostructure substitutes the monolayer MoS2. Only the n-type lateral Schottky barrier of Au/BN-MoS2 contact relates to the area of the BN-MoS2 heterostructure. Notably, the Pt-MoS2 contact with n-type character is transformed into a p-type contact upon substituting the monolayer MoS2 by a BN-MoS2 heterostructure. These changes of the contact natures are ascribed to the variation of Fermi level pinning, work function and charge distribution. Analysis demonstrates that the Fermi level pinning effects are significantly weakened for metal/BN-MoS2 contacts because no gap states dominated by MoS2 are formed, in contrast to those of metal-MoS2 contacts. Although additional BN layers reduce the interlayer interaction and the work function of the metal, the Schottky barriers of metal/BN-MoS2 contacts still do not obey the Schottky-Mott rule. Moreover, different from metal-MoS2 contacts, the charges transfer from electrodes to the monolayer MoS2, resulting in an increment of the work function of these metals in metal/BN-MoS2 contacts. These findings may prove to be instrumental in the future design of new MoS2-based FETs with ohmic contact or p-type character.

  14. Thin-film heterostructures based on oxides of copper and zinc obtained by RF magnetron sputtering in one vacuum cycle

    NASA Astrophysics Data System (ADS)

    Afanasjev, V.; Bazhan, M.; Klimenkov, B.; Mukhin, N.; Chigirev, D.

    2016-07-01

    Investigations of formation conditions of oxide heterostructures ZnO/CuO in the same vacuum cycle using RF magnetron sputtering of powder targets of zinc and copper oxides were carried out. The optical and electrical properties of the thin film structures were studied.

  15. Unusual phase transition in a natural heterostructure of iron pnictides and vanadium oxides

    NASA Astrophysics Data System (ADS)

    Ok, Jong Mok; Baek, S.-H.; Eom, Man Jin; Hoch, C.; Kremer, R. K.; Kim, Dong-Hwan; Chang, Chun-Fu; Ko, Kyung-Tae; Park, Sang-Youn; Ji, Sung Dae; Büchner, B.; Park, Jae-Hoon; Shim, J. H.; Mazin, I. I.; Kim, Jun Sung

    We report the unusual phase transition in Sr2VO3FeAs single crystal, where the Mott-insulating vanadium oxides and the high-Tc superconducting iron pnictides form a natural heterostructure. Clear evidence of the phase transition at T0 = 155 K was observed in the iron pnictide layer, not in the vanadium oxide layer, using bulk and NMR measurements. Neither magnetic ordering with sufficient spin moment nor symmetry change in the crystal structure has been detected at T0. At Tmag ~ 45 K, far below T0, magnetic transition occurs in the iron pnictide layer, while the vanadium oxide layer remains nonmagnetic at low temperatures. The complex evolution of various phases in Sr2VO3FeAs is drastically distinct from the phase transitions found in other iron pnictides or vanadium oxides, highlighting the importance of the additional interlayer coupling between the layers. Equal contribution, corresponding author.

  16. Method of producing homogeneous mixed metal oxides and metal-metal oxide mixtures

    DOEpatents

    Quinby, Thomas C.

    1978-01-01

    Metal powders, metal oxide powders, and mixtures thereof of controlled particle size are provided by reacting an aqueous solution containing dissolved metal values with excess urea. Upon heating, urea reacts with water from the solution leaving a molten urea solution containing the metal values. The molten urea solution is heated to above about 180.degree. C. whereupon metal values precipitate homogeneously as a powder. The powder is reduced to metal or calcined to form oxide particles. One or more metal oxides in a mixture can be selectively reduced to produce metal particles or a mixture of metal and metal oxide particles.

  17. Interface control of the magnetic chirality in CoFeB/MgO heterostructures with heavy-metal underlayers.

    PubMed

    Torrejon, Jacob; Kim, Junyeon; Sinha, Jaivardhan; Mitani, Seiji; Hayashi, Masamitsu; Yamanouchi, Michihiko; Ohno, Hideo

    2014-08-18

    Recent advances in the understanding of spin orbital effects in ultrathin magnetic heterostructures have opened new paradigms to control magnetic moments electrically. The Dzyaloshinskii-Moriya interaction (DMI) is said to play a key role in forming a Néel-type domain wall that can be driven by the spin Hall torque. Here we show that the strength and sign of the DMI can be changed by modifying the adjacent heavy-metal underlayer (X) in perpendicularly magnetized X/CoFeB/MgO heterostructures. The sense of rotation of a domain wall spiral is reversed when the underlayer is changed from Hf, Ta to W and the strength of DMI varies as the filling of 5d orbitals, or the electronegativity, of the heavy-metal layer changes. The DMI can even be tuned by adding nitrogen to the underlayer, thus allowing interface engineering of the magnetic texture in ultrathin magnetic heterostructures.

  18. Fabrication of vertical GaN/InGaN heterostructure nanowires using Ni-Au bi-metal catalysts.

    PubMed

    Ha, Ryong; Kim, Sung-Wook; Choi, Heon-Jin

    2013-06-26

    We have fabricated the vertically aligned coaxial or longitudinal heterostructure GaN/InGaN nanowires. The GaN nanowires are first vertically grown by vapor-liquid-solid mechanism using Au/Ni bi-metal catalysts. The GaN nanowires are single crystal grown in the [0001] direction, with a length and diameter of 1 to 10 μm and 100 nm, respectively. The vertical GaN/InGaN coaxial heterostructure nanowires (COHN) are then fabricated by the subsequent deposition of 2 nm of InxGa1-xN shell on the surface of GaN nanowires. The vertical GaN/InGaN longitudinal heterostructure nanowires (LOHN) are also fabricated by subsequent growth of an InGaN layer on the vertically aligned GaN nanowires using the catalyst. The photoluminescence from the COHN and LOHN indicates that the optical properties of GaN nanowires can be tuned by the formation of a coaxial or longitudinal InGaN layer. Our study demonstrates that the bi-metal catalysts are useful for growing vertical as well as heterostructure GaN nanowires. These vertically aligned GaN/InGaN heterostructure nanowires may be useful for the development of high-performance optoelectronic devices.

  19. Thin film hydrous metal oxide catalysts

    DOEpatents

    Dosch, Robert G.; Stephens, Howard P.

    1995-01-01

    Thin film (<100 nm) hydrous metal oxide catalysts are prepared by 1) synthesis of a hydrous metal oxide, 2) deposition of the hydrous metal oxide upon an inert support surface, 3) ion exchange with catalytically active metals, and 4) activating the hydrous metal oxide catalysts.

  20. Nanoscale Electrical Properties of Oxide Heterostructures Revealed Via Introspection

    NASA Astrophysics Data System (ADS)

    Cen, Cheng; Thiel, Stefan; Mannhart, Jochen; Levy, Jeremy

    2009-03-01

    Previous work shows that conductive regions can be formed via lateral nanoscale confinement of a quasi-two-dimensional electron gas at the LaAlO3/SrTiO3 interface^2. Here we demonstrate how structures constructed in this method serve not only as novel nanoelectronic devices but also as tools for studying fundamental physics in the underlying material system. Nanowires, tunnel junctions, field effect transistors (FETs), together with associated phenomena that we observed such as negative differential resistance, provide insight into the mechanism responsible for the existence and spatial confinement of the interfacial metal-insulator transition. We discuss several examples of nanodevices and the constraints they place on models and mechanisms that govern their properties. ^2Cen et al, Nature Materials 7, 298 (2008).

  1. Atomic thin titania nanosheet-coupled reduced graphene oxide 2D heterostructures for enhanced photocatalytic activity and fast lithium storage

    NASA Astrophysics Data System (ADS)

    Li, Dong Jun; Huang, Zhegang; Hwang, Tae Hoon; Narayan, Rekha; Choi, Jang Wook; Kim, Sang Ouk

    2016-03-01

    Realizing practical high performance materials and devices using the properties of 2D materials is of key research interest in the materials science field. In particular, building well-defined heterostructures using more than two different 2D components in a rational way is highly desirable. In this paper, a 2D heterostructure consisting of atomic thin titania nanosheets densely grown on reduced graphene oxide surface is successfully prepared through incorporating polymer functionalized graphene oxide into the novel TiO2 nanosheets synthesis scheme. As a result of the synergistic combination of a highly accessible surface area and abundant interface, which can modulate the physicochemical properties, the resultant heterostructure can be used in high efficiency visible light photocatalysis as well as fast energy storage with a long lifecycle. [Figure not available: see fulltext.

  2. Magneto-optical investigation of spin–orbit torques in metallic and insulating magnetic heterostructures

    PubMed Central

    Montazeri, Mohammad; Upadhyaya, Pramey; Onbasli, Mehmet C.; Yu, Guoqiang; Wong, Kin L.; Lang, Murong; Fan, Yabin; Li, Xiang; Khalili Amiri, Pedram; Schwartz, Robert N.; Ross, Caroline A.; Wang, Kang L.

    2015-01-01

    Manipulating magnetism by electric current is of great interest for both fundamental and technological reasons. Much effort has been dedicated to spin–orbit torques (SOTs) in metallic structures, while quantitative investigation of analogous phenomena in magnetic insulators remains challenging due to their low electrical conductivity. Here we address this challenge by exploiting the interaction of light with magnetic order, to directly measure SOTs in both metallic and insulating structures. The equivalency of optical and transport measurements is established by investigating a heavy-metal/ferromagnetic-metal device (Ta/CoFeB/MgO). Subsequently, SOTs are measured optically in the contrasting case of a magnetic-insulator/heavy-metal (YIG/Pt) heterostructure, where analogous transport measurements are not viable. We observe a large anti-damping torque in the YIG/Pt system, revealing its promise for spintronic device applications. Moreover, our results demonstrate that SOT physics is directly accessible by optical means in a range of materials, where transport measurements may not be possible. PMID:26643048

  3. Electronic structures and enhanced optical properties of blue phosphorene/transition metal dichalcogenides van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Peng, Qiong; Wang, Zhenyu; Sa, Baisheng; Wu, Bo; Sun, Zhimei

    2016-08-01

    As a fast emerging topic, van der Waals (vdW) heterostructures have been proposed to modify two-dimensional layered materials with desired properties, thus greatly extending the applications of these materials. In this work, the stacking characteristics, electronic structures, band edge alignments, charge density distributions and optical properties of blue phosphorene/transition metal dichalcogenides (BlueP/TMDs) vdW heterostructures were systematically studied based on vdW corrected density functional theory. Interestingly, the valence band maximum and conduction band minimum are located in different parts of BlueP/MoSe2, BlueP/WS2 and BlueP/WSe2 heterostructures. The MoSe2, WS2 or WSe2 layer can be used as the electron donor and the BlueP layer can be used as the electron acceptor. We further found that the optical properties under visible-light irradiation of BlueP/TMDs vdW heterostructures are significantly improved. In particular, the predicted upper limit energy conversion efficiencies of BlueP/MoS2 and BlueP/MoSe2 heterostructures reach as large as 1.16% and 0.98%, respectively, suggesting their potential applications in efficient thin-film solar cells and optoelectronic devices.

  4. Electronic structures and enhanced optical properties of blue phosphorene/transition metal dichalcogenides van der Waals heterostructures.

    PubMed

    Peng, Qiong; Wang, Zhenyu; Sa, Baisheng; Wu, Bo; Sun, Zhimei

    2016-01-01

    As a fast emerging topic, van der Waals (vdW) heterostructures have been proposed to modify two-dimensional layered materials with desired properties, thus greatly extending the applications of these materials. In this work, the stacking characteristics, electronic structures, band edge alignments, charge density distributions and optical properties of blue phosphorene/transition metal dichalcogenides (BlueP/TMDs) vdW heterostructures were systematically studied based on vdW corrected density functional theory. Interestingly, the valence band maximum and conduction band minimum are located in different parts of BlueP/MoSe2, BlueP/WS2 and BlueP/WSe2 heterostructures. The MoSe2, WS2 or WSe2 layer can be used as the electron donor and the BlueP layer can be used as the electron acceptor. We further found that the optical properties under visible-light irradiation of BlueP/TMDs vdW heterostructures are significantly improved. In particular, the predicted upper limit energy conversion efficiencies of BlueP/MoS2 and BlueP/MoSe2 heterostructures reach as large as 1.16% and 0.98%, respectively, suggesting their potential applications in efficient thin-film solar cells and optoelectronic devices.

  5. Electronic structures and enhanced optical properties of blue phosphorene/transition metal dichalcogenides van der Waals heterostructures.

    PubMed

    Peng, Qiong; Wang, Zhenyu; Sa, Baisheng; Wu, Bo; Sun, Zhimei

    2016-01-01

    As a fast emerging topic, van der Waals (vdW) heterostructures have been proposed to modify two-dimensional layered materials with desired properties, thus greatly extending the applications of these materials. In this work, the stacking characteristics, electronic structures, band edge alignments, charge density distributions and optical properties of blue phosphorene/transition metal dichalcogenides (BlueP/TMDs) vdW heterostructures were systematically studied based on vdW corrected density functional theory. Interestingly, the valence band maximum and conduction band minimum are located in different parts of BlueP/MoSe2, BlueP/WS2 and BlueP/WSe2 heterostructures. The MoSe2, WS2 or WSe2 layer can be used as the electron donor and the BlueP layer can be used as the electron acceptor. We further found that the optical properties under visible-light irradiation of BlueP/TMDs vdW heterostructures are significantly improved. In particular, the predicted upper limit energy conversion efficiencies of BlueP/MoS2 and BlueP/MoSe2 heterostructures reach as large as 1.16% and 0.98%, respectively, suggesting their potential applications in efficient thin-film solar cells and optoelectronic devices. PMID:27553787

  6. Electronic structures and enhanced optical properties of blue phosphorene/transition metal dichalcogenides van der Waals heterostructures

    PubMed Central

    Peng, Qiong; Wang, Zhenyu; Sa, Baisheng; Wu, Bo; Sun, Zhimei

    2016-01-01

    As a fast emerging topic, van der Waals (vdW) heterostructures have been proposed to modify two-dimensional layered materials with desired properties, thus greatly extending the applications of these materials. In this work, the stacking characteristics, electronic structures, band edge alignments, charge density distributions and optical properties of blue phosphorene/transition metal dichalcogenides (BlueP/TMDs) vdW heterostructures were systematically studied based on vdW corrected density functional theory. Interestingly, the valence band maximum and conduction band minimum are located in different parts of BlueP/MoSe2, BlueP/WS2 and BlueP/WSe2 heterostructures. The MoSe2, WS2 or WSe2 layer can be used as the electron donor and the BlueP layer can be used as the electron acceptor. We further found that the optical properties under visible-light irradiation of BlueP/TMDs vdW heterostructures are significantly improved. In particular, the predicted upper limit energy conversion efficiencies of BlueP/MoS2 and BlueP/MoSe2 heterostructures reach as large as 1.16% and 0.98%, respectively, suggesting their potential applications in efficient thin-film solar cells and optoelectronic devices. PMID:27553787

  7. Interfacial Magnetism in Complex Oxide Heterostructures Probed by Neutrons and X-rays

    DOE PAGESBeta

    Liu, Yaohua; Ke, Xianglin

    2015-09-02

    Magnetic complex-oxide heterostructures are of keen interest because a wealth of phenomena at the interface of dissimilar materials can give rise to fundamentally new physics and potentially valuable functionalities. Altered magnetization, novel magnetic coupling and emergent interfacial magnetism at the epitaxial layered-oxide interfaces have all been intensively investigated, which shapes our understanding on how to utilize those materials, particularly for spintronics. Neutron and x-ray based techniques have played a decisive role in characterizing interfacial magnetic structures and clarifying the underlying physics in this rapidly developing field. Here we review some recent experimental results, with an emphasis on those studied viamore » polarized neutron reflectometery and polarized x-ray absorption spectroscopy. We conclude with some perspectives.« less

  8. Interfacial Magnetism in Complex Oxide Heterostructures Probed by Neutrons and X-rays

    SciTech Connect

    Liu, Yaohua; Ke, Xianglin

    2015-09-02

    Magnetic complex-oxide heterostructures are of keen interest because a wealth of phenomena at the interface of dissimilar materials can give rise to fundamentally new physics and potentially valuable functionalities. Altered magnetization, novel magnetic coupling and emergent interfacial magnetism at the epitaxial layered-oxide interfaces have all been intensively investigated, which shapes our understanding on how to utilize those materials, particularly for spintronics. Neutron and x-ray based techniques have played a decisive role in characterizing interfacial magnetic structures and clarifying the underlying physics in this rapidly developing field. Here we review some recent experimental results, with an emphasis on those studied via polarized neutron reflectometery and polarized x-ray absorption spectroscopy. We conclude with some perspectives.

  9. Interfacial magnetism in complex oxide heterostructures probed by neutrons and x-rays.

    PubMed

    Liu, Yaohua; Ke, Xianglin

    2015-09-23

    Magnetic complex-oxide heterostructures are of keen interest because a wealth of phenomena at the interface of dissimilar materials can give rise to fundamentally new physics and potentially valuable functionalities. Altered magnetization, novel magnetic coupling and emergent interfacial magnetism at the epitaxial layered-oxide interfaces are under intensive investigation, which shapes our understanding on how to utilize those materials, particularly for spintronics. Neutron and x-ray based techniques have played a decisive role in characterizing interfacial magnetic structures and clarifying the underlying physics in this rapidly developing field. Here we review some recent experimental results, with an emphasis on those studied via polarized neutron reflectometery and polarized x-ray absorption spectroscopy. We conclude with some perspectives.

  10. Metal oxide nanostructures with hierarchical morphology

    DOEpatents

    Ren, Zhifeng; Lao, Jing Yu; Banerjee, Debasish

    2007-11-13

    The present invention relates generally to metal oxide materials with varied symmetrical nanostructure morphologies. In particular, the present invention provides metal oxide materials comprising one or more metallic oxides with three-dimensionally ordered nanostructural morphologies, including hierarchical morphologies. The present invention also provides methods for producing such metal oxide materials.

  11. METAL OXIDE NANOPARTICLES

    SciTech Connect

    FERNANDEZ-GARCIA,M.; RODGRIGUEZ, J.A.

    2007-10-01

    This chapter covers the fundamental science, synthesis, characterization, physicochemical properties and applications of oxide nanomaterials. Explains fundamental aspects that determine the growth and behavior of these systems, briefly examines synthetic procedures using bottom-up and top-down fabrication technologies, discusses the sophisticated experimental techniques and state of the art theory results used to characterize the physico-chemical properties of oxide solids and describe the current knowledge concerning key oxide materials with important technological applications.

  12. Electric Field Dependent Photoluminescence in Atomically Thin Transition Metal Dichalcogenides van der Waals Heterostructures

    NASA Astrophysics Data System (ADS)

    Jauregui, Luis A.; High, Alex A.; Dibos, Alan; Joe, Andrew; Gulpinar, Elgin; Park, Hongkun; Kim, Philip

    uregui, Alex A. High, Alan Dibos, Andrew Joe, Elgin Gulpinar, Hongkun Park, Philip Kim Harvard University, Physics Department -abstract- Single layer transition metal dichalcogenides (TMDC) are 2-dimensional (2D) semiconductors characterized by a direct optical bandgap and large exciton binding energies (>100 meV). We fabricate CQW heterostructures made of 2D TMDCs with hexagonal Boron nitride (BN) as atomically thin barrier and gate dielectric, with top and bottom gate electrodes. We study the evolution of photoluminescence (PL) spectrum with varying BN barrier thickness, electric field, temperature and polarization. Our measured low-temperature (T = 3K) PL peaks show full width at half maxima on the order of ~3meV. We identify the photoluminescence peaks, corresponding to the charged exciton emission, which red shifts and its brightness increases while the neutral exciton emission becomes darker for increasing electric field.

  13. Photoinduced Charge Transfer at Metal Oxide/Oxide Interfaces Prepared with Plasma Enhanced Atomic Layer Deposition

    NASA Astrophysics Data System (ADS)

    Kaur, Manpuneet

    LiNbO3 and ZnO have shown great potential for photochemical surface reactions and specific photocatalytic processes. However, the efficiency of LiNbO3 is limited due to recombination or back reactions and ZnO exhibits a chemical instability in a liquid cell. In this dissertation, both materials were coated with precise thickness of metal oxide layers to passivate the surfaces and to enhance their photocatalytic efficiency. LiNbO 3 was coated with plasma enhanced atomic layer deposited (PEALD) ZnO and Al2O3, and molecular beam deposited TiO2 and VO2. On the other hand, PEALD ZnO and single crystal ZnO were passivated with PEALD SiO2 and Al2O3. Metal oxide/LiNbO3 heterostructures were immersed in aqueous AgNO3 solutions and illuminated with ultraviolet (UV) light to form Ag nanoparticle patterns. Alternatively, Al2O3 and SiO2/ZnO heterostructures were immersed in K3PO 4 buffer solutions and studied for photoelectrochemical reactions. A fundamental aspect of the heterostructures is the band alignment and band bending, which was deduced from in situ photoemission measurements. This research has provided insight to three aspects of the heterostructures. First, the band alignment at the interface of metal oxides/LiNbO 3, and Al2O3 or SiO2/ZnO were used to explain the possible charge transfer processes and the direction of carrier flow in the heterostructures. Second, the effect of metal oxide coatings on the LiNbO3 with different internal carrier concentrations was related to the surface photochemical reactions. Third is the surface passivation and degradation mechanism of Al2O 3 and SiO2 on ZnO was established. The heterostructures were characterized after stability tests using atomic force microscopy (AFM), scanning electron microscopy (SEM), and cross-section transmission electron microscopy (TEM). The results indicate that limited thicknesses of ZnO or TiO2 on polarity patterned LiNbO3 (PPLN) enhances the Ag+ photoinduced reduction process. ZnO seems more efficient

  14. Process for fabrication of metal oxide films

    SciTech Connect

    Tracy, C.E.; Benson, D.; Svensson, S.

    1990-07-17

    This invention is comprised of a method of fabricating metal oxide films from a plurality of reactants by inducing a reaction by plasma deposition among the reactants. The plasma reaction is effective for consolidating the reactants and producing thin films of metal oxides, e.g. electro-optically active transition metal oxides, at a high deposition rate. The presence of hydrogen during the plasma reaction enhances the deposition rate of the metal oxide. Various types of metal oxide films can be produced.

  15. Mesoporous metal oxide graphene nanocomposite materials

    DOEpatents

    Liu, Jun; Aksay, Ilhan A.; Kou, Rong; Wang, Donghai

    2016-05-24

    A nanocomposite material formed of graphene and a mesoporous metal oxide having a demonstrated specific capacity of more than 200 F/g with particular utility when employed in supercapacitor applications. A method for making these nanocomposite materials by first forming a mixture of graphene, a surfactant, and a metal oxide precursor, precipitating the metal oxide precursor with the surfactant from the mixture to form a mesoporous metal oxide. The mesoporous metal oxide is then deposited onto a surface of the graphene.

  16. SINTERING METAL OXIDES

    DOEpatents

    Roake, W.E.

    1960-09-13

    A process is given for producing uranium dioxide material of great density by preparing a compacted mixture of uranium dioxide and from 1 to 3 wt.% of calcium hydride, heating the mixture to at least 675 deg C for decomposition of the hydride and then for sintering, preferably in a vacuum, at from 1550 to 2000 deg C. Calcium metal is formed, some uranium is reduced by the calcium to the metal and a product of high density is obtained.

  17. Copper Oxide Substrates and Epitaxial Copper Oxide/Zinc Oxide Thin Film Heterostructures for Solar Energy Conversion

    NASA Astrophysics Data System (ADS)

    Darvish, Davis Solomon

    Future fossil fuel scarcity and environmental degradation have demonstrated the need for renewable, low-carbon sources of energy to power an increasingly industrialized world. Solar energy with its infinite supply makes it an extraordinary resource that should not go unused. However with current materials, adoption is limited by cost and so a paradigm shift must occur to get everyone on the same page embracing solar technology. Cuprous Oxide (Cu2O) is a promising earth abundant material that can be a great alternative to traditional thin-film photovoltaic materials like CIGS, CdTe, etc. We have prepared Cu 2O bulk substrates by the thermal oxidation of copper foils as well Cu2O thin films deposited via plasma-assisted Molecular Beam Epitaxy. From preliminary Hall measurements it was determined that Cu2O would need to be doped extrinsically. This was further confirmed by simulations of ZnO/Cu2O heterojunctions. A cyclic interdependence between, defect concentration, minority carrier lifetime, film thickness, and carrier concentration manifests itself a primary reason for why efficiencies greater than 4% has yet to be realized. Our growth methodology for our thin-film heterostructures allow precise control of the number of defects that incorporate into our film during both equilibrium and nonequilibrium growth. We also report process flow/device design/fabrication techniques in order to create a device. A typical device without any optimizations exhibited open-circuit voltages Voc, values in excess 500mV; nearly 18% greater than previous solid state devices.

  18. Methods for synthesizing metal oxide nanowires

    DOEpatents

    Sunkara, Mahendra Kumar; Kumar, Vivekanand; Kim, Jeong H.; Clark, Ezra Lee

    2016-08-09

    A method of synthesizing a metal oxide nanowire includes the steps of: combining an amount of a transition metal or a transition metal oxide with an amount of an alkali metal compound to produce a mixture; activating a plasma discharge reactor to create a plasma discharge; exposing the mixture to the plasma discharge for a first predetermined time period such that transition metal oxide nanowires are formed; contacting the transition metal oxide nanowires with an acid solution such that an alkali metal ion is exchanged for a hydrogen ion on each of the transition metal oxide nanowires; and exposing the transition metal oxide nanowires to the plasma discharge for a second predetermined time period to thermally anneal the transition metal oxide nanowires. Transition metal oxide nanowires produced using the synthesis methods described herein are also provided.

  19. Lithium metal reduction of plutonium oxide to produce plutonium metal

    DOEpatents

    Coops, Melvin S.

    1992-01-01

    A method is described for the chemical reduction of plutonium oxides to plutonium metal by the use of pure lithium metal. Lithium metal is used to reduce plutonium oxide to alpha plutonium metal (alpha-Pu). The lithium oxide by-product is reclaimed by sublimation and converted to the chloride salt, and after electrolysis, is removed as lithium metal. Zinc may be used as a solvent metal to improve thermodynamics of the reduction reaction at lower temperatures. Lithium metal reduction enables plutonium oxide reduction without the production of huge quantities of CaO--CaCl.sub.2 residues normally produced in conventional direct oxide reduction processes.

  20. Research Update: Interface-engineered oxygen octahedral tilts in perovskite oxide heterostructures

    SciTech Connect

    Kan, Daisuke Aso, Ryotaro; Kurata, Hiroki; Shimakawa, Yuichi

    2015-06-01

    Interface engineering of structural distortions is a key for exploring the functional properties of oxide heterostructures and superlattices. In this paper, we report on our comprehensive investigations of oxygen octahedral distortions at the heterointerface between perovskite oxides SrRuO{sub 3} and BaTiO{sub 3} on GdScO{sub 3} substrates and of the influences of the interfacially engineered distortions on the magneto-transport properties of the SrRuO{sub 3} layer. Our state-of-the-art annular bright-field imaging in aberration-corrected scanning transmission electron microscopy revealed that the RuO{sub 6} octahedral distortions in the SrRuO{sub 3} layer have strong dependence on the stacking order of the SrRuO{sub 3} and BaTiO{sub 3} layers on the substrate. This can be attributed to the difference in the interfacial octahedral connections. We also found that the stacking order of the oxide layers has a strong impact on the magneto-transport properties, allowing for control of the magnetic anisotropy of the SrRuO{sub 3} layer through interface engineering. Our results demonstrate the significance of the interface engineering of the octahedral distortions on the structural and physical properties of perovskite oxides.

  1. Method for plating with metal oxides

    DOEpatents

    Silver, G.L.; Martin, F.S.

    1994-08-23

    A method is disclosed of plating hydrous metal oxides on at least one substrate, which method is indifferent to the electrochemical properties of the substrate, and comprises reacting metallic ions in aqueous solution with an appropriate oxidizing agent such as sodium hypochlorite or calcium sulfite with oxygen under suitable conditions of pH and concentration such that oxidation and precipitation of metal oxide are sufficiently slow to allow satisfactory plating of metal oxide on the substrate. 1 fig.

  2. Method for plating with metal oxides

    SciTech Connect

    Silver, Gary L.; Martin, Frank S.

    1994-08-23

    A method of plating hydrous metal oxides on at least one substrate, which method is indifferent to the electrochemical properties of the substrate, and comprises reacting metallic ions in aqueous solution with an appropriate oxidizing agent such as sodium hypochlorite or calcium sulfite with oxygen under suitable conditions of pH and concentration such that oxidation and precipitation of metal oxide are sufficiently slow to allow satisfactory plating of metal oxide on the substrate.

  3. Ferromagnetic Schottky junctions using half-metallic Co{sub 2}MnSi/diamond heterostructures

    SciTech Connect

    Ueda, K.; Soumiya, T.; Nishiwaki, M.; Asano, H.

    2013-07-29

    We demonstrate half-metallic Heusler Co{sub 2}MnSi films epitaxially grown on diamond semiconductors using the ion-beam assisted sputtering method. Lower temperature growth below ∼400 °C is key for obtaining abrupt Co{sub 2}MnSi/diamond interfaces. The Co{sub 2}MnSi films on diamond showed a negative anisotropic magnetoresistance of ∼0.2% at 10 K, suggesting the half-metallic nature of the Co{sub 2}MnSi films. Schottky junctions formed using the Co{sub 2}MnSi/diamond heterostructures at 400 °C showed clear rectification properties with a rectification ratio of ∼10{sup 3}. The Schottky barrier heights of the Co{sub 2}MnSi/diamond interfaces were estimated to be ∼0.8 eV. These results indicate that Co{sub 2}MnSi is a promising spin source for spin injection into diamond.

  4. Constructing heterostructure on highly roughened caterpillar-like gold nanotubes with cuprous oxide grains for ultrasensitive and stable nonenzymatic glucose sensor.

    PubMed

    Chen, Anran; Ding, Yu; Yang, Zhimao; Yang, Shengchun

    2015-12-15

    In this study, a metal-metal oxide heterostructure was designed and constructed by growing cuprous oxide (Cu2O) grains on highly surface roughened caterpillar-like Au nanotubes (CLGNs) for ultrasensitive, selective and stable nonenzymatic glucose biosensors. The Cu2O grains are tightly anchored to the surface of CLGNs by the spines, resulting in a large increase in the contact area between Cu2O grains and the CLGNs, which facilitates the electron transport between metal and metal oxide and improves the sensitivity and stability of the sensors. The electron transfer coefficient (α) and electron transfer rate constant (ks) for redox reaction of Cu2O-CLGNs/GCE are found to be 0.50114 and 3.24±0.1 s(-1), respectively. The biosensor shows a linear response to glucose over a concentration range of 0.1-5mM and a high sensitivity of 1215.7 µA mM(-1) cm(-2) with a detection limit of 1.83 μM. Furthermore, the Cu2O-CLGNs biosensor exhibited strong anti-interference capability against uric acid (UA), ascorbic acid (AA), potassium chloride (KCl) and sodium ascorbate (SA), as well as a high stability and repeatability. Our current research indicates that the Cu2O-CLGNs hybrid electrode is a promising choice for constructing nonenzyme based electrochemical biosensors. PMID:26258877

  5. Constructing heterostructure on highly roughened caterpillar-like gold nanotubes with cuprous oxide grains for ultrasensitive and stable nonenzymatic glucose sensor.

    PubMed

    Chen, Anran; Ding, Yu; Yang, Zhimao; Yang, Shengchun

    2015-12-15

    In this study, a metal-metal oxide heterostructure was designed and constructed by growing cuprous oxide (Cu2O) grains on highly surface roughened caterpillar-like Au nanotubes (CLGNs) for ultrasensitive, selective and stable nonenzymatic glucose biosensors. The Cu2O grains are tightly anchored to the surface of CLGNs by the spines, resulting in a large increase in the contact area between Cu2O grains and the CLGNs, which facilitates the electron transport between metal and metal oxide and improves the sensitivity and stability of the sensors. The electron transfer coefficient (α) and electron transfer rate constant (ks) for redox reaction of Cu2O-CLGNs/GCE are found to be 0.50114 and 3.24±0.1 s(-1), respectively. The biosensor shows a linear response to glucose over a concentration range of 0.1-5mM and a high sensitivity of 1215.7 µA mM(-1) cm(-2) with a detection limit of 1.83 μM. Furthermore, the Cu2O-CLGNs biosensor exhibited strong anti-interference capability against uric acid (UA), ascorbic acid (AA), potassium chloride (KCl) and sodium ascorbate (SA), as well as a high stability and repeatability. Our current research indicates that the Cu2O-CLGNs hybrid electrode is a promising choice for constructing nonenzyme based electrochemical biosensors.

  6. Numerical study of metal oxide heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Zhu, L.; Shao, G.; Luo, J. K.

    2011-08-01

    Metal oxide (MO) semiconductors have great potential for photovoltaic (PV) application owing to some optimal bandgaps and a variety of possible combinations of the materials. The progress is limited due to lack of high-quality materials, reliable process and theoretical study and models which can guide the development. This paper reports on the numerical modelling of MO semiconductor PV cells. The effects of the bandgap structure, material, doping concentration and layer thickness on the proposed oxide solar cells have been investigated. It was found that, in an ideal case of no defects and no interface states, wide-gap MO, CuO and Cu2O can form a heterostructure n+/p/p+ cell with efficiency up to 28.6%, demonstrating great potential for development.

  7. Metal versus insulator behavior in ultrathin SrTiO3-based heterostructures

    NASA Astrophysics Data System (ADS)

    Bjaalie, Lars; Janotti, Anderson; Himmetoglu, Burak; Van de Walle, Chris G.

    2016-07-01

    Complex-oxide interfaces can give rise to two-dimensional electron gases (2DEGs) with extremely high densities: for SrTiO3/GdTiO3 (STO/GTO), a density of 1/2 electron per unit-cell area is found within the STO. In this work we use first-principles calculations to study GTO/STO/GTO heterostructures, where both interfaces contribute electrons to the STO. We find that for a thick STO layer the electrons from the interfaces delocalize over multiple TiO2 planes. Once the STO thickness is reduced below three layers, we find that the electrons localize on every other interfacial Ti atom, leading to an insulating phase. We attribute this localization to the combination of high electron density and distortions at the interface. This is further confirmed by a model of the transition based on electron doping of bulk STO, allowing for the same type of distortions as at the interface with GTO. These findings elucidate previous observations [P. Moetakef et al., Phys. Rev. B 86, 201102 (2012), 10.1103/PhysRevB.86.201102], but our proposed physical mechanisms are general and should apply to other complex-oxide interfaces as well.

  8. Preparation of uniform nanoparticles of ultra-high purity metal oxides, mixed metal oxides, metals, and metal alloys

    DOEpatents

    Woodfield, Brian F.; Liu, Shengfeng; Boerio-Goates, Juliana; Liu, Qingyuan; Smith, Stacey Janel

    2012-07-03

    In preferred embodiments, metal nanoparticles, mixed-metal (alloy) nanoparticles, metal oxide nanoparticles and mixed-metal oxide nanoparticles are provided. According to embodiments, the nanoparticles may possess narrow size distributions and high purities. In certain preferred embodiments, methods of preparing metal nanoparticles, mixed-metal nanoparticles, metal oxide nanoparticles and mixed-metal nanoparticles are provided. These methods may provide tight control of particle size, size distribution, and oxidation state. Other preferred embodiments relate to a precursor material that may be used to form nanoparticles. In addition, products prepared from such nanoparticles are disclosed.

  9. P-type Oxides and the Growth of Heterostructure Oxide Devices

    NASA Astrophysics Data System (ADS)

    Hosono, Hideo

    2002-03-01

    Transparent conductive oxides (TCOs) are widely used as transparent metallic electrodes for various displays and solar cells. However, even though TCO is an n-type semiconductor, there is almost no application based on the active function as a compound semiconductor. The primary reason is because most active functions in semiconductors come from the characteristic properties of p-n junction but TCOs do not have a p-type. We anticipate that new frontier of transparent oxide semiconductors (TOSs) utilizing both optical transparency and electron activity in semiconductors will be opened if a p-type TCO is realized. In 1997, we reported on CuAlO2 (thin films) as the first p-type TCO along with a chemical design concept to explore the candidate materials. After that, a series of p-type TCOs based on a Cu+ -based system have been reported following the design concept, i.e., CuGaO2, CuInO2, and SrCu2O2. In 1999, a transparent p-n heterojunction diode exhibiting a rectifying I-V characteristic was fabricated using a combination of p-SrCu2O2 (SCO) and n-ZnO. Ultraviolet-emitting diode (UV-LED) is a typical active device, which can use the features of TOSs. Thus, since the initiation of our project (October, 1999), we concentrated our effort on the fabrication of UV-LED based on transparent p-n junction composed of TOSs. The fabrication was realized(APL,77,475,2000) by the formation of p-n heterojunction composed of heteroepitaxially grown p-SCO and n-ZnO. In this talk I will review our approach to P-type TCOs and UV-LED based on PN heterojuction utilizing TCOs along with recent advances.

  10. Molecular Level Coating for Metal Oxide Particles

    NASA Technical Reports Server (NTRS)

    McDaniel, Patricia R. (Inventor); Saint Clair, Terry L. (Inventor)

    2000-01-01

    Polymer encapsulated metal oxide particles are prepared by combining a polyamide acid in a polar aprotic solvent with a metal alkoxide solution. The polymer was imidized and the metal oxide formed simultaneously in a refluxing organic solvent. The resulting polymer-metal oxide is an intimately mixed commingled blend, possessing synergistic properties of both the polymer and preceramic metal oxide. The encapsulated metal oxide particles have multiple uses including, being useful in the production of skin lubricating creams, weather resistant paints, as a filler for paper, making ultraviolet light stable filled printing ink, being extruded into fibers or ribbons, and coatings for fibers used in the production of composite structural panels.

  11. High-performance Ge quantum dot decorated graphene/zinc-oxide heterostructure infrared photodetector.

    PubMed

    Liu, Xiang; Ji, Xiangbing; Liu, Mingju; Liu, Nianze; Tao, Zhi; Dai, Qing; Wei, Lei; Li, Chi; Zhang, Xiaobing; Wang, Baoping

    2015-02-01

    A novel size-controllable germanium quantum dot (Ge QD) is synthesized and decorated onto reduced graphene oxide (RGO) fragments to overcome the low infrared (IR) photoresponses (∼0.1 A/W)13,14 of pristine graphene. With the integration of flexible substrate, monolayer graphene (MLG) electrode and n-type zinc oxide (ZnO), a high-performance QD-decorated-RGO/ZnO heterostructure infrared photodetector is reported in this study. The Ge QD-decorated-RGO hybrid photosensitive composite improves the responsivity (∼9.7 A/W, 1400 nm) in IR waveband without sacrificing the response speed (∼40 μs rise time and 90 μs recovery time). In addition, the effective barrier formed between graphene and ZnO interface restricts the dark current (∼1.4 nA, -3 V) to guarantee the relatively excellent rectifying behavior and high on/off ratio (∼10(3)) for this IR photodetector. With these superior inherent properties and micron-sized sensing active area, this photodetector manifests great potential in the future application of graphene-based IR photodetector.

  12. Method for preparing hollow metal oxide microsphere

    DOEpatents

    Schmitt, C.R.

    1974-02-12

    Hollow refractory metal oxide microspheres are prepared by impregnating resinous microspheres with a metallic compound, drying the impregnated microspheres, heating the microspheres slowly to carbonize the resin, and igniting the microspheres to remove the carbon and to produce the metal oxide. Zirconium oxide is given as an example. (Official Gazette)

  13. Superconductivity-induced magnetization depletion in a ferromagnet through an insulator in a ferromagnet-insulator-superconductor hybrid oxide heterostructure.

    PubMed

    Prajapat, C L; Singh, Surendra; Paul, Amitesh; Bhattacharya, D; Singh, M R; Mattauch, S; Ravikumar, G; Basu, S

    2016-05-21

    Coupling between superconducting and ferromagnetic states in hybrid oxide heterostructures is presently a topic of intense research. Such a coupling is due to the leakage of the Cooper pairs into the ferromagnet. However, tunneling of the Cooper pairs though an insulator was never considered plausible. Using depth sensitive polarized neutron reflectivity we demonstrate the coupling between superconductor and magnetic layers in epitaxial La2/3Ca1/3MnO3 (LCMO)/SrTiO3/YBa2Cu3O7-δ (YBCO) hybrid heterostructures, with SrTiO3 as an intervening oxide insulator layer between the ferromagnet and the superconductor. Measurements above and below the superconducting transition temperature (TSC) of YBCO demonstrate a large modulation of magnetization in the ferromagnetic layer below the TSC of YBCO in these heterostructures. This work highlights a unique tunneling phenomenon between the epitaxial layers of an oxide superconductor (YBCO) and a magnetic layer (LCMO) through an insulating layer. Our work would inspire further investigations on the fundamental aspect of a long range order of the triplet spin-pairing in hybrid structures.

  14. Optical properties of transition metal oxide quantum wells

    SciTech Connect

    Lin, Chungwei; Posadas, Agham; Choi, Miri; Demkov, Alexander A.

    2015-01-21

    Fabrication of a quantum well, a structure that confines the electron motion along one or more spatial directions, is a powerful method of controlling the electronic structure and corresponding optical response of a material. For example, semiconductor quantum wells are used to enhance optical properties of laser diodes. The ability to control the growth of transition metal oxide films to atomic precision opens an exciting opportunity of engineering quantum wells in these materials. The wide range of transition metal oxide band gaps offers unprecedented control of confinement while the strong correlation of d-electrons allows for various cooperative phenomena to come into play. Here, we combine density functional theory and tight-binding model Hamiltonian analysis to provide a simple physical picture of transition metal oxide quantum well states using a SrO/SrTiO{sub 3}/SrO heterostructure as an example. The optical properties of the well are investigated by computing the frequency-dependent dielectric functions. The effect of an external electric field, which is essential for electro-optical devices, is also considered.

  15. Co-Al mixed metal oxides/carbon nanotubes nanocomposite prepared via a precursor route and enhanced catalytic property

    SciTech Connect

    Fan Guoli; Wang Hui; Xiang Xu; Li Feng

    2013-01-15

    The present work reported the synthesis of Co-Al mixed metal oxides/carbon nanotubes (CoAl-MMO/CNT) nanocomposite from Co-Al layered double hydroxide/CNTs composite precursor (CoAl-LDH/CNT). The materials were characterized by powder X-ray diffraction (XRD), transmission electron microscopy (TEM), low temperature nitrogen adsorption-desorption experiments, thermogravimetric and differential thermal analyses (TG-DTA), Raman spectra and X-ray photoelectron spectroscopy (XPS). The results revealed that in CoAl-MMO/CNT nanocomposite, the nanoparticles of cobalt oxide (CoO) and Co-containing spinel-type complex metal oxides could be well-dispersed on the surface of CNTs, thus forming the heterostructure of CoAl-MMO and CNTs. Furthermore, as-synthesized CoAl-MMO/CNT nanocomposite was utilized as additives for catalytic thermal decomposition of ammonium perchlorate (AP). Compared to those for pure AP and CoAl-MMO, the peak temperature of AP decomposition for CoAl-MMO/CNT was significantly decreased, which is attributed to the novel heterostructure and synergistic effect of multi-component metal oxides of nanocomposite. - Graphical abstract: Hybrid Co-Al mixed metal oxides/carbon nanotubes nanocomposite showed the enhanced catalytic activity in the thermal decomposition of ammonium perchlorate, as compared to carbon nanotubes and pure Co-Al mixed metal oxides. Highlights: Black-Right-Pointing-Pointer Co-Al mixed metal oxides/carbon nanotubes nanocomposite was synthesized. Black-Right-Pointing-Pointer Co-Al mixed metal oxides consisted of cobalt oxide and Co-containing spinels. Black-Right-Pointing-Pointer Nanocomposite exhibited excellent catalytic activity for the decomposition of AP. Black-Right-Pointing-Pointer The superior catalytic property is related to novel heterostructure and composition.

  16. Topological and unconventional magnetic states in transition metal oxides

    NASA Astrophysics Data System (ADS)

    Fiete, Gregory

    In this talk I describe some recent work on unusual correlated phases that may be found in bulk transition metal oxides with strong spin-orbit coupling. I will focus on model Hamiltonian studies that are motivated by the pyrocholore iridates, though the correlated topological phases described may appear in a much broader class of materials. I will describe a variety of fractionalized topological phases protected by time-reversal and crystalline symmetries: The weak topological Mott insulator (WTMI), the TI* phase, and the topological crystalline Mott insulator (TCMI). If time permits, I will also discuss closely related heterostructures of pyrochlore iridates in a bilayer and trilayer film geometry. These quasi-two dimensional systems may exhibit a number of interesting topological and magnetic phases. This work is generously funded by the ARO, DARPA, and the NSF.

  17. Insight into spin transport in oxide heterostructures from interface-resolved magnetic mapping

    SciTech Connect

    Bruno, F. Y.; Varela, M.; Abrudan, R.; Pennycook, S. J.; Sefrioui, Z.

    2015-02-17

    At interfaces between complex oxides, electronic, orbital and magnetic reconstructions may produce states of matter absent from the materials involved, offering novel possibilities for electronic and spintronic devices. Here we show that magnetic reconstruction has a strong influence on the interfacial spin selectivity, a key parameter controlling spin transport in magnetic tunnel junctions. In epitaxial heterostructures combining layers of antiferromagnetic LaFeO3 (LFO) and ferromagnetic La0.7Sr0.3MnO3 (LSMO), we find that a net magnetic moment is induced in the first few unit planes of LFO near the interface with LSMO. Using X-ray photoemission electron microscopy, we show that the ferromagnetic domain structure of the manganite electrodes is imprinted into the antiferromagnetic tunnel barrier, endowing it with spin selectivity. Finally, we find that the spin arrangement resulting from coexisting ferromagnetic and antiferromagnetic interactions strongly influences the tunnel magnetoresistance of LSMO/LFO/LSMO junctions through competing spin-polarization and spin-filtering effects.

  18. Spin structure in an interfacially-coupled epitaxial ferromagnetic oxide heterostructure

    NASA Astrophysics Data System (ADS)

    Ke, Xianglin

    2014-03-01

    We report the spin structure of an exchange-biased ferromagnetic oxide heterostructure, La0.67Sr0.33MnO3 / SrRuO3, through magnetization and polarized neutron reflectometry measurements. We reveal that the magnetization reversal process of the La0.67Sr0.33MnO3 biased layer critically depends on the frozen-in spin structure of the SrRuO3 biasing layer during the cooling process. Furthermore, we observe unexpected double-shifted hysteresis loops of the biased layer that originates from the formation of lateral 180° magnetic domains within the biasing layer, a new mechanism not found in conventional exchange-bias systems. The effects of the thus-formed spin structure on the magnetotransport properties will be presented as well. This work was done in collaboration with L. J. Belenky, V. Lauter, H. Ambaye, C. W. Bark, C. B. Eom, M. S. Rzchowski, J. Smith, and M. Zhu.

  19. Insight into spin transport in oxide heterostructures from interface-resolved magnetic mapping

    DOE PAGESBeta

    Bruno, F. Y.; Grisolia, M. N.; Visani, C.; Valencia, S.; Varela, M.; Abrudan, R.; Tornos, J.; Rivera-Calzada, A.; Ünal, A. A.; Pennycook, S. J.; et al

    2015-02-17

    At interfaces between complex oxides, electronic, orbital and magnetic reconstructions may produce states of matter absent from the materials involved, offering novel possibilities for electronic and spintronic devices. Here we show that magnetic reconstruction has a strong influence on the interfacial spin selectivity, a key parameter controlling spin transport in magnetic tunnel junctions. In epitaxial heterostructures combining layers of antiferromagnetic LaFeO3 (LFO) and ferromagnetic La0.7Sr0.3MnO3 (LSMO), we find that a net magnetic moment is induced in the first few unit planes of LFO near the interface with LSMO. Using X-ray photoemission electron microscopy, we show that the ferromagnetic domain structuremore » of the manganite electrodes is imprinted into the antiferromagnetic tunnel barrier, endowing it with spin selectivity. Finally, we find that the spin arrangement resulting from coexisting ferromagnetic and antiferromagnetic interactions strongly influences the tunnel magnetoresistance of LSMO/LFO/LSMO junctions through competing spin-polarization and spin-filtering effects.« less

  20. Insight into spin transport in oxide heterostructures from interface-resolved magnetic mapping.

    PubMed

    Bruno, F Y; Grisolia, M N; Visani, C; Valencia, S; Varela, M; Abrudan, R; Tornos, J; Rivera-Calzada, A; Ünal, A A; Pennycook, S J; Sefrioui, Z; Leon, C; Villegas, J E; Santamaria, J; Barthélémy, A; Bibes, M

    2015-01-01

    At interfaces between complex oxides, electronic, orbital and magnetic reconstructions may produce states of matter absent from the materials involved, offering novel possibilities for electronic and spintronic devices. Here we show that magnetic reconstruction has a strong influence on the interfacial spin selectivity, a key parameter controlling spin transport in magnetic tunnel junctions. In epitaxial heterostructures combining layers of antiferromagnetic LaFeO(3) (LFO) and ferromagnetic La(0.7)Sr(0.3)MnO(3) (LSMO), we find that a net magnetic moment is induced in the first few unit planes of LFO near the interface with LSMO. Using X-ray photoemission electron microscopy, we show that the ferromagnetic domain structure of the manganite electrodes is imprinted into the antiferromagnetic tunnel barrier, endowing it with spin selectivity. Finally, we find that the spin arrangement resulting from coexisting ferromagnetic and antiferromagnetic interactions strongly influences the tunnel magnetoresistance of LSMO/LFO/LSMO junctions through competing spin-polarization and spin-filtering effects.

  1. IMPORTANCE OF IN SITU MONITORS IN THE PREPARATION OF LAYERED OXIDE HETEROSTRUCTURES BY REACTIVE MBE.

    SciTech Connect

    Schlom, Darrell G.; Haeni, J. H.; Theis, C. D.; Tian, W.; Pan, X. Q.; Brown, G. W.; Hawley, M. E.

    2001-01-01

    Using a variety of in situ monitors and when possible adsorption-controlled growth conditions, layered oxide heterostructures including new compounds and metastable superlattices have been grown by reactive molecular beam epitaxy (MBE). The heteroepitaxial layers grown include Bi{sub 4}Ti{sub 3}O{sub 12}-SrTiO{sub 3} and Bi{sub 4}Ti{sub 3}O{sub 12}-PbTiO{sub 3} Aurivillius phases, Sr{sub n+1}Ti{sub n}O{sub 3n+1} Ruddlesden-Popper phases, and metastable PbTiO{sub 3}/SrTiO{sub 3} and BaTiO{sub 3}/SrTiO{sub 3} superlattices. Accurate composition control is key to the controlled growth of such structures, and to this end combinations of reflection high-energy electron diffraction (RHEED), atomic absorption spectroscopy (AA), a quartz crystal microbalance (QCM), and adsorption-controlled growth conditions were employed during growth. The structural perfection of the films has been investigated using in situ RHEED, four-circle x-ray diffraction, atomic force microscopy (AFM), and high-resolution transmission electron microscopy (TEM).

  2. One-Step Synthesis of MoS₂/WS₂ Layered Heterostructures and Catalytic Activity of Defective Transition Metal Dichalcogenide Films.

    PubMed

    Woods, John M; Jung, Yeonwoong; Xie, Yujun; Liu, Wen; Liu, Yanhui; Wang, Hailiang; Cha, Judy J

    2016-02-23

    Transition metal dichalcogenides (TMDCs) are a promising class of two-dimensional (2D) materials for use in applications such as 2D electronics, optoelectronics, and catalysis. Due to the van der Waals (vdW) bonding between layers, vdW heterostructures can be constructed between two different species of TMDCs. Most studies employ exfoliation or co-vapor growth schemes, which are limited by the small size and uneven distribution of heterostructures on the growth substrate. In this work we demonstrate a one-step synthesis procedure for large-area vdW heterostructures between horizontal TMDCs MoS2 and WS2. The synthesis procedure is scalable and provides patterning ability, which is critical for electronic applications in integrated circuits. We demonstrate rectification characteristics of large-area MoS2/WS2 stacks. In addition, hydrogen evolution reaction performance was measured in these horizontal MoS2 and WS2 thin films, which indicate that, in addition to the catalytically active sulfur edge sites, defect sites may serve as catalyst sites. PMID:26836122

  3. Making A Noble-Metal-On-Metal-Oxide Catalyst

    NASA Technical Reports Server (NTRS)

    Miller, Irvin M.; Davis, Patricia P.; Upchurch, Billy T.

    1989-01-01

    Catalyst exhibits superior performance in oxidation of CO in CO2 lasers. Two-step process developed for preparing platinum- or palladium-on-tin-oxide catalyst for recombination of CO and O2, decomposition products that occur in high-voltage discharge region of closed-cycle CO2 laser. Process also applicable to other noble-metal/metal-oxide combinations.

  4. Oxide film on metal substrate reduced to form metal-oxide-metal layer structure

    NASA Technical Reports Server (NTRS)

    Youngdahl, C. A.

    1967-01-01

    Electrically conductive layer of zirconium on a zirconium-oxide film residing on a zirconium substrate is formed by reducing the oxide in a sodium-calcium solution. The reduced metal remains on the oxide surface as an adherent layer and seems to form a barrier that inhibits further reaction.

  5. Materials optimization and ghz spin dynamics of metallic ferromagnetic thin film heterostructures

    NASA Astrophysics Data System (ADS)

    Cheng, Cheng

    Metallic ferromagnetic (FM) thin film heterostructures play an important role in emerging magnetoelectronic devices, which introduce the spin degree of freedom of electrons into conventional charge-based electronic devices. As the majority of magnetoelectronic devices operate in the GHz frequency range, it is critical to understand the high-frequency magnetization dynamics in these structures. In this thesis, we start with the static magnetic properties of FM thin films and their optimization via the field-sputtering process incorporating a specially designed in-situ electromagnet. We focus on the origins of anisotropy and hysteresis/coercivity in soft magnetic thin films, which are most relevant to magentic susceptibility and power dissipation in applications in the sub-GHz frequency regime, such as magnetic-core integrated inductors. Next we explore GHz magnetization dynamics in thin-film heterostructures, both in semi-infinite samples and confined geometries. All investigations are rooted in the Landau-Lifshitz-Gilbert (LLG) equation, the equation of motion for magnetization. The phenomenological Gilbert damping parameter in the LLG equation has been interpreted, since the 1970's, in terms of the electrical resistivity. We present the first interpretation of the size effect in Gilbert damping in single metallic FM films based on this electron theory of damping. The LLG equation is intrinsically nonlinear, which provides possibilities for rf signal processing. We analyze the frequency doubling effect at small-angle magnetization precession from the first-order expansion of the LLG equation, and demonstrate second harmonic generation from Ni81 Fe19 (Permalloy) thin film under ferromagnetic resonance (FMR), three orders of magnitude more efficient than in ferrites traditionally used in rf devices. Though the efficiency is less than in semiconductor devices, we provide field- and frequency-selectivity in the second harmonic generation. To address further the

  6. Preparing oxidizer coated metal fuel particles

    NASA Technical Reports Server (NTRS)

    Shafer, J. I.; Simmons, G. M. (Inventor)

    1974-01-01

    A solid propellant composition of improved efficiency is described which includes an oxidizer containing ammonium perchlorate, and a powered metal fuel, preferably aluminum or beryllium, in the form of a composite. The metal fuel is contained in the crystalline lattice framework of the oxidizer, as well as within the oxidizer particles, and is disposed in the interstices between the oxidizer particles of the composition. The propellant composition is produced by a process comprising the crystallization of ammonium perchlorate in water, in the presence of finely divided aluminum or beryllium. A suitable binder is incorporated in the propellant composition to bind the individual particles of metal with the particles of oxidizer containing occluded metal.

  7. Nanostructured transition metal oxides useful for water oxidation catalysis

    DOEpatents

    Frei, Heinz M; Jiao, Feng

    2013-12-24

    The present invention provides for a composition comprising a nanostructured transition metal oxide capable of oxidizing two H.sub.2O molecules to obtain four protons. In some embodiments of the invention, the composition further comprises a porous matrix wherein the nanocluster of the transition metal oxide is embedded on and/or in the porous matrix.

  8. Ammonia release method for depositing metal oxides

    DOEpatents

    Silver, G.L.; Martin, F.S.

    1994-12-13

    A method is described for depositing metal oxides on substrates which is indifferent to the electrochemical properties of the substrates and which comprises forming ammine complexes containing metal ions and thereafter effecting removal of ammonia from the ammine complexes so as to permit slow precipitation and deposition of metal oxide on the substrates. 1 figure.

  9. Ammonia release method for depositing metal oxides

    DOEpatents

    Silver, Gary L.; Martin, Frank S.

    1994-12-13

    A method of depositing metal oxides on substrates which is indifferent to the electrochemical properties of the substrates and which comprises forming ammine complexes containing metal ions and thereafter effecting removal of ammonia from the ammine complexes so as to permit slow precipitation and deposition of metal oxide on the substrates.

  10. Ammonia release method for depositing metal oxides

    SciTech Connect

    Silver, G.L.; Martin, F.S.

    1993-12-31

    A method of depositing metal oxides on substrates which is indifferent to the electrochemical properties of the substrates and which comprises forming ammine complexes containing metal ions and thereafter effecting removal of ammonia from the ammine complexes so as to permit slow precipitation and deposition of metal oxide on the substrates.

  11. Method for producing metal oxide nanoparticles

    DOEpatents

    Phillips, Jonathan; Mendoza, Daniel; Chen, Chun-Ku

    2008-04-15

    Method for producing metal oxide nanoparticles. The method includes generating an aerosol of solid metallic microparticles, generating plasma with a plasma hot zone at a temperature sufficiently high to vaporize the microparticles into metal vapor, and directing the aerosol into the hot zone of the plasma. The microparticles vaporize in the hot zone into metal vapor. The metal vapor is directed away from the hot zone and into the cooler plasma afterglow where it oxidizes, cools and condenses to form solid metal oxide nanoparticles.

  12. Glycothermal synthesis of metal oxides

    NASA Astrophysics Data System (ADS)

    Inoue, Masashi

    2004-04-01

    The author has been exploring the synthesis of inorganic materials in organic solvents at temperatures (200-300 °C) higher than their boiling points (solvothermal reaction), and has developed various reaction methods for the synthesis of ultrafine particles of metal oxides. In this paper, the reactions of aluminium compounds (aluminium hydroxide (Al(OH)3; gibbsite), aluminium alkoxides, and aluminium salts) in various organic solvents (alcohols, glycols, aminoalcohols, and inert organic solvents) are first reviewed, and reaction mechanisms and effects of the starting materials and solvents on the products are discussed. Then, the specificity of the use of glycols, especially 1,4-butanediol (glycothermal reaction), is clarified, and glycothermal synthesis of crystalline mixed oxides such as yttrium aluminium garnet is described. Finally, the use of the solvothermally prepared products as the catalyst materials is described.

  13. Strongly enhanced spin current in topological insulator/ferromagnetic metal heterostructures by spin pumping

    SciTech Connect

    Wu, C. N.; Hung, H. Y.; Lin, H. Y.; Lin, P. H.; Kwo, J. E-mail: raynien@phys.nthu.edu.tw; Lin, Y. H.; Fanchiang, Y. T.; Hong, M. E-mail: raynien@phys.nthu.edu.tw; Lin, J. G.; Lee, S. F.

    2015-05-07

    Spin pumping effect in Bi{sub 2}Se{sub 3}/Fe{sub 3}Si and Fe/Bi{sub 2}Te{sub 3} heterostructures was studied. High quality films of Bi{sub 2}Se{sub 3}(001) on ferromagnetic Fe{sub 3}Si(111) layer and Fe(111) films on Bi{sub 2}Te{sub 3}(001) layer were grown epitaxially by molecular beam epitaxy. Using a microwave cavity source, large voltages due to the Inverse Spin Hall Effect (V{sub ISHE}) were detected in Bi{sub 2}Se{sub 3}(001)/Fe{sub 3}Si(111) bi-layer at room temperature. V{sub ISHE} of up to 63.4 ± 4.0 μV at 100 mW microwave power (P{sub MW}) was observed. In addition, Fe(111)/Bi{sub 2}Te{sub 3}(001) bi-layer also showed a large V{sub ISHE} of 3.0 ± 0.1 μV at P{sub MW} of 25 mW. V{sub ISHE} of both structures showed microwave linear power dependence in accordance with the theoretical model of spin pumping. The spin Hall angle was calculated to be 0.0053 ± 0.002 in Bi{sub 2}Se{sub 3} and was estimated to be 0.0068 ± 0.003 in Bi{sub 2}Te{sub 3}. The charge current density (J{sub c}) of Bi{sub 2}Se{sub 3}/Fe{sub 3}Si and Fe/Bi{sub 2}Te{sub 3} structures are comparable and are about 2–5 times higher than the Fe{sub 3}Si/normal metal and Fe{sub 3}Si/GaAs results. The significant enhancement of spin current in topological insulator/ferromagnetic metal (TI/FM) and FM/TI bilayers is attributed to strong spin-orbit coupling inherent of TIs and demonstrates the high potential of exploiting TI-based structures for spintronic applications.

  14. Enzyme electrodes immobilized on hetero-structured metallic nanowire array for glucose sensing

    NASA Astrophysics Data System (ADS)

    Yoon, Hargsoon; Deshpande, Devesh; Chintakuntla, Ritesh R.; Varadan, Vijay K.

    2007-12-01

    The fabrication of hetero-structured vertically aligned nanowire arrays and enzyme immobilization on their surface is presented for a glucose sensor with high sensitivity. Hetero-structured nanowires of gold and platinum are fabricated by hybrid polycarbonate membrane assembly and electrochemical deposition processes and glucose oxidase are attached on their surface by covalent immobilization. Platinum and gold hetero-structured nanoelectrodes with enzyme are evaluated to detect hydrogen peroxide produced in the enzyme reaction without the need for the artificial redox mediator, which is not viable on a homogenous gold electrode. Chronoamperometric current behavior is demonstrated with various concentrations from 0.5 mM to 28 mM. In this research, the combination of enzyme immobilization and sensing surfaces on nanowire arrays has shown superior performance with regards to the sensitivity and response time.

  15. Magnetic Chirality Induced from Ruderman-Kittel-Kasuya-Yosida Interaction at an Interface of a Ferromagnet/Heavy Metal Heterostructure

    NASA Astrophysics Data System (ADS)

    Shibuya, Taira; Matsuura, Hiroyasu; Ogata, Masao

    2016-11-01

    We study a microscopic derivation and the properties of the Dzyaloshinskii-Moriya interaction (DMI) between local magnetic moments in ferromagnet/heavy metal heterostructures. First, we derive DMI by Ruderman-Kittel-Kasuya-Yosida interaction through electrons in a heavy metal with Rashba spin orbit interaction (SOI). Next, we study the dependences of the DMI on the Rashba SOI, lattice constant, and chemical potential. We find that the DMI amplitude increases linearly when the Rashba SOI is small, has a maximum when the Rashba SOI is comparable to the hopping integral, and decreases when the Rashba SOI is large. The sign of the DMI not only changes depending on the sign of the Rashba SOI but also the lattice constants and the chemical potential of the heavy metal. The implications of the obtained results for experiments are discussed.

  16. Gold and gold-palladium alloy nanoparticles on heterostructured TiO2 nanobelts as plasmonic photocatalysts for benzyl alcohol oxidation

    NASA Astrophysics Data System (ADS)

    Jiang, Tongtong; Jia, Chuancheng; Zhang, Lanchun; He, Shuren; Sang, Yuanhua; Li, Haidong; Li, Yanqing; Xu, Xiaohong; Liu, Hong

    2014-11-01

    Plasmonic photocatalysts composed of Au and bimetallic Au-Pd alloy nanoparticles (NPs) on one-dimensional TiO2 nanobelts (TiO2-NBs) were used for the aerobic oxidation of benzyl alcohol under visible light irradiation. Remarkable light-promoted activity was observed for the as-synthesized M/TiO2-NB (M = Au, Au-Pd) nanostructures based on the TiO2(B)/anatase heterostructured nanobelt. The difference in band structure and the well matched interface between the TiO2(B) and anatase phases, coupled with the one-dimensional nanostructure, enable an enhanced charge transfer within the heterostructured nanobelt. This inter-phase charge transfer greatly facilitates the flow of hot electrons from the metal NPs to TiO2 and promotes benzyl alcohol oxidation. This efficient electron transfer was identified by the much higher photocurrent response measured for the Au/TiO2-NB nanostructure with the TiO2(B)/anatase heterojunction than those with either of the single phases under visible light irradiation. Alloying Au with Pd in Au-Pd/TiO2-NB results in a significant improvement in the visible light-promoted activity compared to the monometallic Au/TiO2-NB sample. It is supposed that the plasmon-mediated charge distribution within the alloy NPs is mainly responsible for the enhanced photocatalytic activity of the bimetallic nanostructures.Plasmonic photocatalysts composed of Au and bimetallic Au-Pd alloy nanoparticles (NPs) on one-dimensional TiO2 nanobelts (TiO2-NBs) were used for the aerobic oxidation of benzyl alcohol under visible light irradiation. Remarkable light-promoted activity was observed for the as-synthesized M/TiO2-NB (M = Au, Au-Pd) nanostructures based on the TiO2(B)/anatase heterostructured nanobelt. The difference in band structure and the well matched interface between the TiO2(B) and anatase phases, coupled with the one-dimensional nanostructure, enable an enhanced charge transfer within the heterostructured nanobelt. This inter-phase charge transfer greatly

  17. Metal oxide composite dosimeter method and material

    DOEpatents

    Miller, Steven D.

    1998-01-01

    The present invention is a method of measuring a radiation dose wherein a radiation responsive material consisting essentially of metal oxide is first exposed to ionizing radiation. The metal oxide is then stimulating with light thereby causing the radiation responsive material to photoluminesce. Photons emitted from the metal oxide as a result of photoluminescence may be counted to provide a measure of the ionizing radiation.

  18. Thermal stability of an InAlN/GaN heterostructure grown on silicon by metal-organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Watanabe, Arata; Freedsman, Joseph J.; Urayama, Yuya; Christy, Dennis; Egawa, Takashi

    2015-12-01

    The thermal stabilities of metal-organic chemical vapor deposition-grown lattice-matched InAlN/GaN/Si heterostructures have been reported by using slower and faster growth rates for the InAlN barrier layer in particular. The temperature-dependent surface and two-dimensional electron gas (2-DEG) properties of these heterostructures were investigated by means of atomic force microscopy, photoluminescence excitation spectroscopy, and electrical characterization. Even at the annealing temperature of 850 °C, the InAlN layer grown with a slower growth rate exhibited a smooth surface morphology that resulted in excellent 2-DEG properties for the InAlN/GaN heterostructure. As a result, maximum values for the drain current density (IDS,max) and transconductance (gm,max) of 1.5 A/mm and 346 mS/mm, respectively, were achieved for the high-electron-mobility transistor (HEMT) fabricated on this heterostructure. The InAlN layer grown with a faster growth rate, however, exhibited degradation of the surface morphology at an annealing temperature of 850 °C, which caused compositional in-homogeneities and impacted the 2-DEG properties of the InAlN/GaN heterostructure. Additionally, an HEMT fabricated on this heterostructure yielded lower IDS,max and gm,max values of 1 A/mm and 210 mS/mm, respectively.

  19. Metal oxides for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Yu, Xinge; Marks, Tobin J.; Facchetti, Antonio

    2016-04-01

    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

  20. Metal oxides for optoelectronic applications.

    PubMed

    Yu, Xinge; Marks, Tobin J; Facchetti, Antonio

    2016-04-01

    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories. PMID:27005918

  1. Metal oxides for optoelectronic applications.

    PubMed

    Yu, Xinge; Marks, Tobin J; Facchetti, Antonio

    2016-04-01

    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

  2. The oxidation of metals and alloys

    NASA Technical Reports Server (NTRS)

    Scheil, Erich

    1952-01-01

    This paper reviews the various types of oxidation processes occurring with pure metals and gives explanations for the varying time-temperature-oxidation rate relations that exist for copper, tungsten, zinc, cadmium, and tantalum. The effect of shape and crystal structure on oxidation is discussed. Principles derived are applied to the oxidation of alloys.

  3. Electron enrichment in 3d transition metal oxide hetero-nanostructures.

    PubMed

    Kronawitter, Coleman X; Bakke, Jonathan R; Wheeler, Damon A; Wang, Wei-Cheng; Chang, Chinglin; Antoun, Bonnie R; Zhang, Jin Z; Guo, Jinghua; Bent, Stacey F; Mao, Samuel S; Vayssieres, Lionel

    2011-09-14

    Direct experimental observation of spontaneous electron enrichment of metal d orbitals in a new transition metal oxide heterostructure with nanoscale dimensionality is reported. Aqueous chemical synthesis and vapor phase deposition are combined to fabricate oriented arrays of high-interfacial-area hetero-nanostructures comprised of titanium oxide and iron oxide nanomaterials. Synchrotron-based soft X-ray spectroscopy techniques with high spectral resolution are utilized to directly probe the titanium and oxygen orbital character of the interfacial region's occupied and unoccupied densities of states. These data demonstrate the interface to possess electrons in Ti 3d bands and an emergent degree of orbital hybridization that is absent in parent oxide reference crystals. The carrier dynamics of the hetero-nanostructures are studied by ultrafast transient absorption spectroscopy, which reveals the presence of a dense manifold of states, the relaxations from which exhibit multiple exponential decays whose magnitudes depend on their energetic positions within the electronic structure.

  4. Scanning capacitance microscopy and spectroscopy applied to local charge modifications and characterization of nitride-oxide-silicon heterostructures

    NASA Astrophysics Data System (ADS)

    Dreyer, M.; Wiesendanger, R.

    1995-10-01

    We have combined a home-built capacitance sensor with a commercial scanning force microscope to obtain a Scanning Capacitance Microscope (SCM). The SCM has been used to study Nitride-Oxide-Silicon (NOS) heterostructures which offer potential applications in charge storage technology. Charge writing and reading on a submicrometer scale is demonstrated with our SCM setup. In addition, SCM appears to be very useful for the characterization of subsurface defects in semiconductor devices which are inaccessible by most of the other scanning probe microscopies. Finally, we introduce a novel spectroscopic mode of SCM operation which offers combined voltage-dependent and spatially resolved information about inhomogeneous charge distributions in semiconductor devices.

  5. Reduction of Metal Oxide to Metal using Ionic Liquids

    SciTech Connect

    Dr. Ramana Reddy

    2012-04-12

    A novel pathway for the high efficiency production of metal from metal oxide means of electrolysis in ionic liquids at low temperature was investigated. The main emphasis was to eliminate the use of carbon and high temperature application in the reduction of metal oxides to metals. The emphasis of this research was to produce metals such as Zn, and Pb that are normally produced by the application of very high temperatures. The reduction of zinc oxide to zinc and lead oxide to lead were investigated. This study involved three steps in accomplishing the final goal of reduction of metal oxide to metal using ionic liquids: 1) Dissolution of metal oxide in an ionic liquid, 2) Determination of reduction potential using cyclic voltammetry (CV) and 3) Reduction of the dissolved metal oxide. Ionic liquids provide additional advantage by offering a wide potential range for the deposition. In each and every step of the process, more than one process variable has been examined. Experimental results for electrochemical extraction of Zn from ZnO and Pb from PbO using eutectic mixtures of Urea ((NH2)2CO) and Choline chloride (HOC2H4N(CH3)3+Cl-) or (ChCl) in a molar ratio 2:1, varying voltage and temperatures were carried out. Fourier Transform Infra-Red (FTIR) spectroscopy studies of ionic liquids with and without metal oxide additions were conducted. FTIR and induction coupled plasma spectroscopy (ICPS) was used in the characterization of the metal oxide dissolved ionic liquid. Electrochemical experiments were conducted using EG&G potentiostat/galvanostat with three electrode cell systems. Cyclic voltammetry was used in the determination of reduction potentials for the deposition of metals. Chronoamperometric experiments were carried out in the potential range of -0.6V to -1.9V for lead and -1.4V to -1.9V for zinc. The deposits were characterized using XRD and SEM-EDS for phase, morphological and elemental analysis. The results showed that pure metal was deposited on the cathode

  6. Large anisotropic magnetoresistance across the Schottky interface in all oxide ferromagnet/semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Li, P.; Guo, B. L.; Bai, H. L.

    2011-06-01

    Over 80% fourfold symmetric anisotropic magnetoresistance (AMR) across the interface is observed in epitaxial Fe3O4 (001)/Nb:SrTiO3 (001) heterostructures, while the twofold symmetric AMR across the interface in epitaxial Fe3O4 (111)/ZnO (0001) heterostructures is rather small. The large AMR across the interface is considered to be induced by the assistance of magnetocrystalline anisotropic energy for the transport electrons while the applied voltage bias is near the height of Schottky barrier, which is further verified by the fact that a larger critical current is needed for the maximum AMR in the Fe3O4 (001)/Nb:SrTiO3 (001) heterostructures with heavier Nb-doping.

  7. Reconstructions at the Interface in Complex Oxide Heterostructures with Strongly Correlated Electrons

    NASA Astrophysics Data System (ADS)

    Gray, Benjamin

    Strongly correlated oxides exhibit a rich spectrum of closely competing orders near the localized-itinerant Mott insulator transition leaving their ground states ripe with instabilities susceptible to small perturbations such as lattice distortions, variation in stoichiometry, magnetic and electric fields, etc. As the field of interfacial engineering has matured, these underlying instabilities in the electronic structure of correlated oxides continue to be leveraged to manipulate existing phases or search for emergent ones. The central theme is matching materials across the interface with disparate physical, chemical, electronic, or magnetic structure to harness interfacial reconstructions in the strongly coupled charge, spin, orbital, and lattice degrees of freedom. In this dissertation, we apply the above paradigm to cuprate-manganite and cuprate-titanate interfaces. We examine ultrathin YBa2Cu3O7/La 2/3Ca1/3MnO3 multilayers, where interfacial charge reconstruction modulates the distribution of charge carriers within the superconducting planes and thereby act as dials to tune through the cuprate doping phase diagram. The ultrathin nature of the cuprate layers allows the reconstructed states to be resolved free of a bulk admixture. The depleted carriers are observed to directly enter the CuO2 planes. With increasing LCMO thickness, magnetic correlations are introduced, and coupling between interfacial Cu and Mn develops. The reconstructions in spin and electronic degrees of freedom found in cuprate-manganite heterostructures are expected to completely mask all other competing interactions. To this end, SrTiO3 is incorporated as a spacer material in cuprate-titanate multilayers to reveal the role of dimensionality, interlayer coupling, and broken translational symmetry. At the unit cell limit, a decrease in carrier concentration is found that directly correlates with underdoping from lost charge reservoir layers at the interface, while increased STO layer thickness

  8. Photocurrent measurements in Coupled Quantum Well van der Waals Heterostructures made of 2D Transition Metal Dichalcogenides

    NASA Astrophysics Data System (ADS)

    Joe, Andrew; Jauregui, Luis; High, Alex; Dibos, Alan; Gulpinar, Elgin; Pistunova, Kateryna; Park, Hongkun; Kim, Philip

    , Luis A. Jauregui, Alex A. High, Alan Dibos, Elgin Gulpinar, Kateryna Pistunova, Hongkun Park, Philip Kim Harvard University, Physics Department -abstract- Single layer transition metal dichalcogenides (TMDC) are 2-dimensional (2D) semiconductors van der Waals (vdW) characterized by a direct optical bandgap in the visible wavelength (~2 eV). Characterization of the band alignment between TMDC and the barrier is important for the fabrication of tunneling devices. Here, we fabricate coupled quantum well (CQW) heterostructures made of 2D TMDCs with hexagonal Boron nitride (hBN) as an atomically thin barrier and gate dielectric and with top and bottom metal (or graphite) as gate electrodes. We observe a clear dependence of the photo-generated current with varying hBN thickness, electrode workfunctions, electric field, laser excitation power, excitation wavelength, and temperature. We will discuss the implication of photocurrent in relation to quantum transport process across the vdW interfaces.

  9. High temperature, oxidation resistant noble metal-Al alloy thermocouple

    NASA Technical Reports Server (NTRS)

    Smialek, James L. (Inventor); Gedwill, Michael G. (Inventor)

    1994-01-01

    A thermocouple is disclosed. The thermocouple is comprised of an electropositive leg formed of a noble metal-Al alloy and an electronegative leg electrically joined to form a thermocouple junction. The thermocouple provides for accurate and reproducible measurement of high temperatures (600 - 1300 C) in inert, oxidizing or reducing environments, gases, or vacuum. Furthermore, the thermocouple circumvents the need for expensive, strategic precious metals such as rhodium as a constituent component. Selective oxidation of rhodium is also thereby precluded.

  10. Nanocomposite of graphene and metal oxide materials

    DOEpatents

    Liu, Jun; Aksay, Ilhan A.; Choi, Daiwon; Wang, Donghai; Yang, Zhenguo

    2013-10-15

    Nanocomposite materials comprising a metal oxide bonded to at least one graphene material. The nanocomposite materials exhibit a specific capacity of at least twice that of the metal oxide material without the graphene at a charge/discharge rate greater than about 10 C.

  11. Nanocomposite of graphene and metal oxide materials

    DOEpatents

    Liu, Jun; Aksay, Ilhan A.; Choi, Daiwon; Wang, Donghai; Yang, Zhenguo

    2012-09-04

    Nanocomposite materials comprising a metal oxide bonded to at least one graphene material. The nanocomposite materials exhibit a specific capacity of at least twice that of the metal oxide material without the graphene at a charge/discharge rate greater than about 10C.

  12. Photodegradation of chlorofluorocarbon alternatives on metal oxide

    SciTech Connect

    Tanaka, K.; Hisanaga, T. )

    1994-05-01

    HCFC and HFC were photodegraded on metal oxides. Degradation rate on several metal oxides was in the order: TiO[sub 2] > ZnO > Fe[sub 2]O[sub 3] > kaolin [ge] SiO[sub 2] [ge] Al[sub 2]O[sub 3]. Principal degradation products were CO[sub 2], Cl[sup [minus

  13. Nanocomposite of graphene and metal oxide materials

    DOEpatents

    Liu, Jun; Aksay, Ilhan A.; Choi, Daiwon; Wang, Donghai; Yang, Zhenguo

    2015-06-30

    Nanocomposite materials comprising a metal oxide bonded to at least one graphene material. The nanocomposite materials exhibit a specific capacity of at least twice that of the metal oxide material without the graphene at a charge/discharge rate greater than about 10 C.

  14. Surface protected lithium-metal-oxide electrodes

    DOEpatents

    Thackeray, Michael M.; Kang, Sun-Ho

    2016-04-05

    A lithium-metal-oxide positive electrode having a layered or spinel structure for a non-aqueous lithium electrochemical cell and battery is disclosed comprising electrode particles that are protected at the surface from undesirable effects, such as electrolyte oxidation, oxygen loss or dissolution by one or more lithium-metal-polyanionic compounds, such as a lithium-metal-phosphate or a lithium-metal-silicate material that can act as a solid electrolyte at or above the operating potential of the lithium-metal-oxide electrode. The surface protection significantly enhances the surface stability, rate capability and cycling stability of the lithium-metal-oxide electrodes, particularly when charged to high potentials.

  15. Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures

    SciTech Connect

    Nevedomskiy, V. N. Bert, N. A.; Chaldyshev, V. V.; Preobrazhernskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

    2015-12-15

    A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by low-temperature epitaxy which provides a large excess of arsenic in the epitaxial GaAs layer. During the growth of subsequent layers at a higher temperature, excess arsenic forms nanoinclusions, i.e., metal quantum dots in the GaAs matrix. The two-dimensional array of such metal quantum dots is created by the δ doping of a low-temperature GaAs layer with antimony which serves as a precursor for the heterogeneous nucleation of metal quantum dots and accumulates in them with the formation of AsSb metal alloy. The two-dimensional array of InAs semiconductor quantum dots is formed via the Stranski–Krastanov mechanism at the GaAs surface. Between the arrays of metal and semiconductor quantum dots, a 3-nm-thick AlAs barrier layer is grown. The total spacing between the arrays of metal and semiconductor quantum dots is 10 nm. Electron microscopy of the structure shows that the arrangement of metal quantum dots and semiconductor quantum dots in the two-dimensional arrays is spatially correlated. The spatial correlation is apparently caused by elastic strain and stress fields produced by both AsSb metal and InAs semiconductor quantum dots in the GaAs matrix.

  16. Three-Electrode Metal Oxide Reduction Cell

    DOEpatents

    Dees, Dennis W.; Ackerman, John P.

    2005-06-28

    A method of electrochemically reducing a metal oxide to the metal in an electrochemical cell is disclosed along with the cell. Each of the anode and cathode operate at their respective maximum reaction rates. An electrolyte and an anode at which oxygen can be evolved, and a cathode including a metal oxide to be reduced are included as is a third electrode with independent power supplies connecting the anode and the third electrode and the cathode and the third electrode.

  17. Method for making monolithic metal oxide aerogels

    DOEpatents

    Droege, M.W.; Coronado, P.R.; Hair, L.M.

    1995-03-07

    Transparent, monolithic metal oxide aerogels of varying densities are produced using a method in which a metal alkoxide solution and a catalyst solution are prepared separately and reacted. The resulting hydrolyzed-condensed colloidal solution is gelled, and the wet gel is contained within a sealed, but gas permeable, containment vessel during supercritical extraction of the solvent. The present invention is especially advantageous for making metal oxides other than silica that are prone to forming opaque, cracked aerogels. 6 figs.

  18. Three-electrode metal oxide reduction cell

    DOEpatents

    Dees, Dennis W.; Ackerman, John P.

    2008-08-12

    A method of electrochemically reducing a metal oxide to the metal in an electrochemical cell is disclosed along with the cell. Each of the anode and cathode operate at their respective maximum reaction rates. An electrolyte and an anode at which oxygen can be evolved, and a cathode including a metal oxide to be reduced are included as is a third electrode with independent power supplies connecting the anode and the third electrode and the cathode and the third electrode.

  19. Method for making monolithic metal oxide aerogels

    DOEpatents

    Droege, Michael W.; Coronado, Paul R.; Hair, Lucy M.

    1995-01-01

    Transparent, monolithic metal oxide aerogels of varying densities are produced using a method in which a metal alkoxide solution and a catalyst solution are prepared separately and reacted. The resulting hydrolyzed-condensed colloidal solution is gelled, and the wet gel is contained within a sealed, but gas permeable, containment vessel during supercritical extraction of the solvent. The present invention is especially advantageous for making metal oxides other than silica that are prone to forming opaque, cracked aerogels.

  20. Direct electrochemical reduction of metal-oxides

    DOEpatents

    Redey, Laszlo I.; Gourishankar, Karthick

    2003-01-01

    A method of controlling the direct electrolytic reduction of a metal oxide or mixtures of metal oxides to the corresponding metal or metals. A non-consumable anode and a cathode and a salt electrolyte with a first reference electrode near the non-consumable anode and a second reference electrode near the cathode are used. Oxygen gas is produced and removed from the cell. The anode potential is compared to the first reference electrode to prevent anode dissolution and gas evolution other than oxygen, and the cathode potential is compared to the second reference electrode to prevent production of reductant metal from ions in the electrolyte.

  1. Ultrahigh‐Power Pseudocapacitors Based on Ordered Porous Heterostructures of Electron‐Correlated Oxides

    PubMed Central

    Lang, Xing‐You; Liu, Bo‐Tian; Shi, Xiang‐Mei; Li, Ying‐Qi; Wen, Zi

    2016-01-01

    Nanostructured transition‐metal oxides can store high‐density energy in fast surface redox reactions, but their poor conductivity causes remarkable reductions in the energy storage of most pseudocapacitors at high power delivery (fast charge/discharge rates). Here it is shown that electron‐correlated oxide hybrid electrodes made of nanocrystalline vanadium sesquioxide and manganese dioxide with 3D and bicontinuous nanoporous architecture (NP V2O3/MnO2) have enhanced conductivity because of metallization of electron‐correlated V2O3 skeleton via insulator‐to‐metal transition. The conductive V2O3 skeleton at ambient temperature enables fast electron and ion transports in the entire electrode and facilitates charge transfer at abundant V2O3/MnO2 interface. These merits significantly improve the pseudocapacitive behavior and rate capability of the constituent MnO2. Symmetric pseudocapacitors assembled with binder‐free NP V2O3/MnO2 electrodes deliver ultrahigh electrical powers (up to ≈422 W cm23) while maintaining the high volumetric energy of thin‐film lithium battery with excellent stability. PMID:27812465

  2. Methods of producing adsorption media including a metal oxide

    DOEpatents

    Mann, Nicholas R; Tranter, Troy J

    2014-03-04

    Methods of producing a metal oxide are disclosed. The method comprises dissolving a metal salt in a reaction solvent to form a metal salt/reaction solvent solution. The metal salt is converted to a metal oxide and a caustic solution is added to the metal oxide/reaction solvent solution to adjust the pH of the metal oxide/reaction solvent solution to less than approximately 7.0. The metal oxide is precipitated and recovered. A method of producing adsorption media including the metal oxide is also disclosed, as is a precursor of an active component including particles of a metal oxide.

  3. Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

    PubMed Central

    2016-01-01

    In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the integration of InAs/Si heterostructures into Si nanowires by ion implantation and flash lamp annealing, we developed a routine that has proven to be suitable for the monolithic integration of GaAs nanocrystallite segments into the core of silicon nanowires. The formation of a Ga segment adjacent to longer GaAs nanocrystallites resulted in Schottky-diode-like I/V characteristics with distinct electroluminescence originating from the GaAs nanocrystallite for the nanowire device operated in the reverse breakdown regime. The observed electroluminescence was ascribed to radiative band-to-band recombinations resulting in distinct emission peaks and a low contribution due to intraband transition, which were also observed under forward bias. Simulations of the obtained nanowire heterostructure confirmed the proposed impact ionization process responsible for hot carrier luminescence. This approach may enable a new route for on-chip photonic devices used for light emission or detection purposes. PMID:27168031

  4. Effects of growth temperature on the properties of InGaN channel heterostructures grown by pulsed metal organic chemical vapor deposition

    SciTech Connect

    Zhang, Yachao; Zhou, Xiaowei; Xu, Shengrui; Wang, Zhizhe; Chen, Zhibin; Zhang, Jinfeng; Zhang, Jincheng E-mail: xd-zhangyachao@163.com; Hao, Yue E-mail: xd-zhangyachao@163.com

    2015-12-15

    Pulsed metal organic chemical vapor deposition (P-MOCVD) is introduced into the growth of high quality InGaN channel heterostructures. The effects of InGaN channel growth temperature on the structural and transport properties of the heterostructures are investigated in detail. High resolution x-ray diffraction (HRXRD) and Photoluminescence (PL) spectra indicate that the quality of InGaN channel strongly depends on the growth temperature. Meanwhile, the atomic force microscopy (AFM) results show that the interface morphology between the InGaN channel and the barrier layer also relies on the growth temperature. Since the variation of material properties of InGaN channel has a significant influence on the electrical properties of InAlN/InGaN heterostructures, the optimal transport properties can be achieved by adjusting the growth temperature. A very high two dimension electron gas (2DEG) density of 1.92 × 10{sup 13} cm{sup −2} and Hall electron mobility of 1025 cm{sup 2}/(V⋅s) at room temperature are obtained at the optimal growth temperature around 740 °C. The excellent transport properties in our work indicate that the heterostructure with InGaN channel is a promising candidate for the microwave power devices, and the results in this paper will be instructive for further study of the InGaN channel heterostructures.

  5. Investigation of Current Channels at the Interface between Complex Oxide Heterostructures

    NASA Astrophysics Data System (ADS)

    Rosenberg, Aaron; Kirtley, John; Spanton, Eric; Watson, Christopher; di Gennaro, Emiliano; Scotti di Uccio, Umberto; Aruta, Carmela; Tafuri, Francesco; Miletto Granozio, Fabio; Moler, Kathryn

    2013-03-01

    The interface between SrTiO3 and LaAlO3, both perovskite oxide insulators, supports metallic and superconducting states under certain conditions. Previous unpublished data by Kalisky et al. shows spatial variation in the current flow in these interfaces, including enhanced conductivity associated with structural domains. The microscopic origin of this variation in conductivity is unknown. We extend the previous work to LaGaO3/SrTiO3, and NdGaO3/ SrTiO3 interfaces, observe similar stripe-like modulations in the current flow, and study their temperature and frequency dependence. Additionally, we plan to study how the current channels in LaAlO3/SrTiO3 change under a uniaxial strain. Investigation of these spatial variations may improve our understanding of the relationship between structure and conductivity in complex oxide interfaces.

  6. Novel nanowire heterostructures for nanoelectronic applications

    NASA Astrophysics Data System (ADS)

    Yan, Hao

    Semiconductor nanowires are promising candidates for future nanoelectronic devices. Integration of functional materials into nanowires in the form of nanowire heterostructures can give them unique properties and novel device applications. This thesis deals with the synthesis, characterization and electronic application of core/shell nanowire heterostructures. First, a novel approach to the core/shell heterostructure, namely the atomic layer deposition (ALD) is introduced to deposit high-dielectric-constant (high-k) oxide, perovskite oxide and metal. The excellent conformality of ALD allows these materials to form uniform shells on semiconductor nanowire cores. The electrical and magnetic properties of Si/ZrO2/Ni core/shell/shell nanowires are further investigated, which shows metallic conductivity and axial alignment in a magnetic field. Next, we study the performance of semiconductor/high-k-oxide core/shell nanowires as nanowire field effect transistors (NW-FETs). The fabrication strategies are first evaluated. Then high-performance NW-FET devices with large ON/OFF ratio, sharp switching and low leakage current are demonstrated. These devices show significant gate enhancement compared to the back-gated devices and are promising to outperform state-of-the-art planar MOSFETs fabricated with top-down methods. Subsequently, a charge-trapping nanowire (CTNW) with semiconductor/multidielectric core/shell heterostructure is demonstrated. Charge-trapping in the nanowire heterostructure gives it memory function with large ON/OFF ratio and reliable switching. Charge-trapping also defines the gate response of the CTNW-FET, making it a programmable logic unit. Furthermore, the application of the CTNW heterostructure in neuromorphic circuit is investigated. CTNWs are then built into crossbar array architecture to carry out complex functions. Programming different active node patterns into the array allows it to carry out different logic operations such as XOR, adder

  7. Au/metal oxides for low temperature CO oxidation

    SciTech Connect

    Srinivas, G.; Wright, J.; Bai, C.S.; Cook, R.

    1996-12-31

    Oxidation of carbon monoxide is important for several operations including fuel cells and carbon dioxide lasers. Room temperature CO oxidation has been investigated on a series of Au/metal oxide catalysts at conditions typical of spacecraft atmospheres; CO = 50 ppm, CO{sub 2} = 7,000 ppm, H{sub 2}O = 40% (RH) at 25{degrees}C, balance = air, and gas hourly space velocities of 7,000-60,000 hr{sup -1}. The addition of Au increases the room temperature CO oxidation activity of the metal oxides dramatically. All the Au/metal oxides deactivate during the CO oxidation reaction, especially in the presence of CO{sub 2} in the feed. The stability of the Au/metal oxide catalysts decreases in the following order: TiO{sub 2} > Fe{sub 2}O{sub 3} > NiO > Co{sub 3}O{sub 4}. The stability appears to decrease with an increase in the basicity of the metal oxides. In situ FTIR of CO adsorption on Au/TiO{sub 2} at 25{degrees}C indicates the formation of adsorbed CO, carboxylate, and carbonate species on the catalyst surface.

  8. Catalytic production of metal carbonyls from metal oxides

    DOEpatents

    Sapienza, R.S.; Slegeir, W.A.; Foran, M.T.

    1984-01-06

    This invention relates to the formation of metal carbonyls from metal oxides and specially the formation of molybdenum carbonyl and iron carbonyl from their respective oxides. Copper is used here in admixed form or used in chemically combined form as copper molybdate. The copper/metal oxide combination or combined copper is utilized with a solvent, such as toluene and subjected to carbon monoxide pressure of 25 atmospheres or greater at about 150 to 260/sup 0/C. The reducing metal copper is employed in catalytic concentrations or combined concentrations as CuMoO/sub 4/ and both hydrogen and water present serve as promoters. It has been found that the yields by this process have been salutary and that additionally the catalytic metal may be reused in the process to good effect. 3 tables.

  9. Catalytic production of metal carbonyls from metal oxides

    DOEpatents

    Sapienza, Richard S.; Slegeir, William A.; Foran, Michael T.

    1984-01-01

    This invention relates to the formation of metal carbonyls from metal oxides and specially the formation of molybdenum carbonyl and iron carbonyl from their respective oxides. Copper is used here in admixed form or used in chemically combined form as copper molybdate. The copper/metal oxide combination or combined copper is utilized with a solvent, such as toluene and subjected to carbon monoxide pressure of 25 atmospheres or greater at about 150.degree.-260.degree. C. The reducing metal copper is employed in catalytic concentrations or combined concentrations as CuMoO.sub.4 and both hydrogen and water present serve as promoters. It has been found that the yields by this process have been salutary and that additionally the catalytic metal may be reused in the process to good effect.

  10. Towards enhancing two-dimensional electron gas quantum confinement effects in perovskite oxide heterostructures

    SciTech Connect

    Nazir, Safdar; Behtash, Maziar; Yang, Kesong

    2015-03-21

    We explore the possibility of achieving highly confined two-dimensional electron gas (2DEG) within one single atomic layer through a comprehensive comparison study on three prototypical perovskite heterostructures, LaAlO{sub 3}/ATiO{sub 3} (A = Ca, Sr, and Ba), using first-principles electronic structure calculations. We predict that the heterostructure LaAlO{sub 3}/BaTiO{sub 3} has a highly confined 2DEG within a single atomic layer of the substrate BaTiO{sub 3}, and exhibits relatively higher interfacial charge carrier density and larger magnetic moments than the well-known LaAlO{sub 3}/SrTiO{sub 3} system. The long Ti-O bond length in the ab-plane of the LaAlO{sub 3}/BaTiO{sub 3} heterostructure is responsible for the superior charge confinement. We propose BaTiO{sub 3} as an exceptional substrate material for 2DEG systems with potentially superior properties.

  11. Trace metal concentrations in oxidation ponds

    SciTech Connect

    Suffern, J.S.; Fitzgerald, C.M.; Szluha, A.T.

    1981-11-01

    Heavy metal concentrations of Cd, Cr, Cu, Ni, Pb, and Zn in the wastewater, sludge, and biotic components of the Oak Ridge National Laboratory oxidation ponds were examined to determine whether metals accumulated in tilapia. Results indicated that metal levels in the wastewater and biotic components are generally low and that the major metal reservoir is the sludge. Metals did not accumulate beyond established standards in the muscle or liver of tilapia grown in the oxidation ponds. This result may be partially due to the rapid growth rates of these fish (1-2 g fish/sup -1//day/sup -1/), with new tissue developing more rapidly than metals can accumulate. Another factor may be that the high concentrations of organic complexes in the ponds lower the availability of metals to the biota.

  12. Development of techniques for processing metal-metal oxide systems

    NASA Technical Reports Server (NTRS)

    Johnson, P. C.

    1976-01-01

    Techniques for producing model metal-metal oxide systems for the purpose of evaluating the results of processing such systems in the low-gravity environment afforded by a drop tower facility are described. Because of the lack of success in producing suitable materials samples and techniques for processing in the 3.5 seconds available, the program was discontinued.

  13. Lithium metal oxide electrodes for lithium batteries

    DOEpatents

    Thackeray, Michael M.; Kim, Jeom-Soo; Johnson, Christopher S.

    2008-01-01

    An uncycled electrode for a non-aqueous lithium electrochemical cell including a lithium metal oxide having the formula Li.sub.(2+2x)/(2+x)M'.sub.2x/(2+x)M.sub.(2-2x)/(2+x)O.sub.2-.delta., in which 0.ltoreq.x<1 and .delta. is less than 0.2, and in which M is a non-lithium metal ion with an average trivalent oxidation state selected from two or more of the first row transition metals or lighter metal elements in the periodic table, and M' is one or more ions with an average tetravalent oxidation state selected from the first and second row transition metal elements and Sn. Methods of preconditioning the electrodes are disclosed as are electrochemical cells and batteries containing the electrodes.

  14. Antimicrobial activity of the metals and metal oxide nanoparticles.

    PubMed

    Dizaj, Solmaz Maleki; Lotfipour, Farzaneh; Barzegar-Jalali, Mohammad; Zarrintan, Mohammad Hossein; Adibkia, Khosro

    2014-11-01

    The ever increasing resistance of pathogens towards antibiotics has caused serious health problems in the recent years. It has been shown that by combining modern technologies such as nanotechnology and material science with intrinsic antimicrobial activity of the metals, novel applications for these substances could be identified. According to the reports, metal and metal oxide nanoparticles represent a group of materials which were investigated in respect to their antimicrobial effects. In the present review, we focused on the recent research works concerning antimicrobial activity of metal and metal oxide nanoparticles together with their mechanism of action. Reviewed literature indicated that the particle size was the essential parameter which determined the antimicrobial effectiveness of the metal nanoparticles. Combination therapy with the metal nanoparticles might be one of the possible strategies to overcome the current bacterial resistance to the antibacterial agents. However, further studies should be performed to minimize the toxicity of metal and metal oxide nanoparticles to apply as proper alternatives for antibiotics and disinfectants especially in biomedical applications. PMID:25280707

  15. High surface area, electrically conductive nanocarbon-supported metal oxide

    DOEpatents

    Worsley, Marcus A; Han, Thomas Yong-Jin; Kuntz, Joshua D; Cervanted, Octavio; Gash, Alexander E; Baumann, Theodore F; Satcher, Jr., Joe H

    2014-03-04

    A metal oxide-carbon composite includes a carbon aerogel with an oxide overcoat. The metal oxide-carbon composite is made by providing a carbon aerogel, immersing the carbon aerogel in a metal oxide sol under a vacuum, raising the carbon aerogel with the metal oxide sol to atmospheric pressure, curing the carbon aerogel with the metal oxide sol at room temperature, and drying the carbon aerogel with the metal oxide sol to produce the metal oxide-carbon composite. The step of providing a carbon aerogel can provide an activated carbon aerogel or provide a carbon aerogel with carbon nanotubes that make the carbon aerogel mechanically robust.

  16. High surface area, electrically conductive nanocarbon-supported metal oxide

    SciTech Connect

    Worsley, Marcus A.; Han, Thomas Yong-Jin; Kuntz, Joshua D.; Cervantes, Octavio; Gash, Alexander E.; Baumann, Theodore F.; Satcher, Jr., Joe H.

    2015-07-14

    A metal oxide-carbon composite includes a carbon aerogel with an oxide overcoat. The metal oxide-carbon composite is made by providing a carbon aerogel, immersing the carbon aerogel in a metal oxide sol under a vacuum, raising the carbon aerogel with the metal oxide sol to atmospheric pressure, curing the carbon aerogel with the metal oxide sol at room temperature, and drying the carbon aerogel with the metal oxide sol to produce the metal oxide-carbon composite. The step of providing a carbon aerogel can provide an activated carbon aerogel or provide a carbon aerogel with carbon nanotubes that make the carbon aerogel mechanically robust.

  17. Process for etching mixed metal oxides

    DOEpatents

    Ashby, C.I.H.; Ginley, D.S.

    1994-10-18

    An etching process is described using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstrom range may be achieved by this method. 1 fig.

  18. Process for etching mixed metal oxides

    DOEpatents

    Ashby, Carol I. H.; Ginley, David S.

    1994-01-01

    An etching process using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstom range may be achieved by this method.

  19. Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion

    NASA Astrophysics Data System (ADS)

    Sung Park, Pil; Reddy, Kongara M.; Nath, Digbijoy N.; Yang, Zhichao; Padture, Nitin P.; Rajan, Siddharth

    2013-04-01

    A simple method for the creation of Ohmic contact to 2D electron gas in AlGaN/GaN high electron-mobility transistors using Cr/graphene layer is demonstrated. A weak temperature dependence of this Ohmic contact observed in the range 77 to 300 K precludes thermionic emission or trap-assisted hopping as possible carrier-transport mechanisms. It is suggested that the Cr/graphene combination acts akin to a doped n-type semiconductor in contact with AlGaN/GaN heterostructure, and promotes carrier transport along percolating Al-lean paths through the AlGaN layer. This use of graphene offers a simple method for making Ohmic contacts to AlGaN/GaN heterostructures, circumventing complex additional processing steps involving high temperatures. These results could have important implications for the fabrication and manufacturing of AlGaN/GaN-based microelectronic and optoelectronic devices/sensors of the future.

  20. Flexible heterostructures based on metal phthalocyanines thin films obtained by MAPLE

    NASA Astrophysics Data System (ADS)

    Socol, M.; Preda, N.; Rasoga, O.; Breazu, C.; Stavarache, I.; Stanculescu, F.; Socol, G.; Gherendi, F.; Grumezescu, V.; Popescu-Pelin, G.; Girtan, M.; Stefan, N.

    2016-06-01

    Heterostructures based on zinc phthalocyanine (ZnPc), magnesium phthalocyanine (MgPc) and 5,10,15,20-tetra(4-pyrydil)21H,23H-porphine (TPyP) were deposited on ITO flexible substrates by Matrix Assisted Pulsed Laser Evaporation (MAPLE) technique. Organic heterostructures containing (TPyP/ZnPc(MgPc)) stacked or (ZnPc(MgPc):TPyP) mixed layers were characterized by X-ray diffraction-XRD, photoluminescence-PL, UV-vis and FTIR spectroscopy. No chemical decomposition of the initial materials was observed. The investigated structures present a large spectral absorption in the visible range making them suitable for organic photovoltaics applications (OPV). Scanning electron microscopy-SEM and atomic force microscopy-AFM revealed morphologies typical for the films prepared by MAPLE. The current-voltage characteristics of the investigated structures, measured in dark and under light, present an improvement in the current value (∼3 order of magnitude larger) for the structure based on the mixed layer (Al/MgPc:TPyP/ITO) in comparison with the stacked layer (Al/MgPc//TPyP/ITO). A photogeneration process was evidenced in the case of structures Al/ZnPc:TPyP/ITO with mixed layers.

  1. In situ growth of matchlike ZnO/Au plasmonic heterostructure for enhanced photoelectrochemical water splitting.

    PubMed

    Wu, Mi; Chen, Wei-Jian; Shen, Yu-Hua; Huang, Fang-Zhi; Li, Chuan-Hao; Li, Shi-Kuo

    2014-09-10

    In this paper, we report a novel matchlike zinc oxide (ZnO)/gold (Au) heterostructure with plasmonic-enhanced photoelectrochemical (PEC) activity for solar hydrogen production. The matchlike heterostructure with Au nanoparticles coated on the tip of ZnO nanorods is in situ grown on a zinc (Zn) substrate by using a facile hydrothermal and photoreduction combined approach. This unique heterostructure exhibits plasmonic-enhanced light absorption, efficient charge separation and transportation properties with tunable Au contents. The photocurrent density of the matchlike ZnO/Au heterostructure reaches 9.11 mA/cm(2) at an applied potential of 1.0 V (vs Ag/AgCl) with an Au/Zn atomic ratio of 0.039, which is much higher than that of the pristine ZnO nanorod array (0.33 mA/cm(2)). Moreover, the solar-to-hydrogen conversion efficiency of this special heterostructure can reach 0.48%, 16 times higher than that of the pristine ZnO nanorod array (0.03%). What is more, the efficiency could be further improved by optimizing the Au content of the heterostructure. The formation mechanism of such a unique heterostructure is proposed to explain the plasmonic-enhanced PEC performance. This study might contribute to the rational design of the visible-light-responsive plasmonic semiconductor/metal heterostructure photoanode to harvest the solar spectrum. PMID:25144940

  2. Thermal stability of an InAlN/GaN heterostructure grown on silicon by metal-organic chemical vapor deposition

    SciTech Connect

    Watanabe, Arata Freedsman, Joseph J.; Urayama, Yuya; Christy, Dennis; Egawa, Takashi

    2015-12-21

    The thermal stabilities of metal-organic chemical vapor deposition-grown lattice-matched InAlN/GaN/Si heterostructures have been reported by using slower and faster growth rates for the InAlN barrier layer in particular. The temperature-dependent surface and two-dimensional electron gas (2-DEG) properties of these heterostructures were investigated by means of atomic force microscopy, photoluminescence excitation spectroscopy, and electrical characterization. Even at the annealing temperature of 850 °C, the InAlN layer grown with a slower growth rate exhibited a smooth surface morphology that resulted in excellent 2-DEG properties for the InAlN/GaN heterostructure. As a result, maximum values for the drain current density (I{sub DS,max}) and transconductance (g{sub m,max}) of 1.5 A/mm and 346 mS/mm, respectively, were achieved for the high-electron-mobility transistor (HEMT) fabricated on this heterostructure. The InAlN layer grown with a faster growth rate, however, exhibited degradation of the surface morphology at an annealing temperature of 850 °C, which caused compositional in-homogeneities and impacted the 2-DEG properties of the InAlN/GaN heterostructure. Additionally, an HEMT fabricated on this heterostructure yielded lower I{sub DS,max} and g{sub m,max} values of 1 A/mm and 210 mS/mm, respectively.

  3. Aerosol-spray diverse mesoporous metal oxides from metal nitrates

    PubMed Central

    Kuai, Long; Wang, Junxin; Ming, Tian; Fang, Caihong; Sun, Zhenhua; Geng, Baoyou; Wang, Jianfang

    2015-01-01

    Transition metal oxides are widely used in solar cells, batteries, transistors, memories, transparent conductive electrodes, photocatalysts, gas sensors, supercapacitors, and smart windows. In many of these applications, large surface areas and pore volumes can enhance molecular adsorption, facilitate ion transfer, and increase interfacial areas; the formation of complex oxides (mixed, doped, multimetallic oxides and oxide-based hybrids) can alter electronic band structures, modify/enhance charge carrier concentrations/separation, and introduce desired functionalities. A general synthetic approach to diverse mesoporous metal oxides is therefore very attractive. Here we describe a powerful aerosol-spray method for synthesizing various mesoporous metal oxides from low-cost nitrate salts. During spray, thermal heating of precursor droplets drives solvent evaporation and induces surfactant-directed formation of mesostructures, nitrate decomposition and oxide cross-linking. Thirteen types of monometallic oxides and four groups of complex ones are successfully produced, with mesoporous iron oxide microspheres demonstrated for photocatalytic oxygen evolution and gas sensing with superior performances. PMID:25897988

  4. Aerosol-spray diverse mesoporous metal oxides from metal nitrates.

    PubMed

    Kuai, Long; Wang, Junxin; Ming, Tian; Fang, Caihong; Sun, Zhenhua; Geng, Baoyou; Wang, Jianfang

    2015-01-01

    Transition metal oxides are widely used in solar cells, batteries, transistors, memories, transparent conductive electrodes, photocatalysts, gas sensors, supercapacitors, and smart windows. In many of these applications, large surface areas and pore volumes can enhance molecular adsorption, facilitate ion transfer, and increase interfacial areas; the formation of complex oxides (mixed, doped, multimetallic oxides and oxide-based hybrids) can alter electronic band structures, modify/enhance charge carrier concentrations/separation, and introduce desired functionalities. A general synthetic approach to diverse mesoporous metal oxides is therefore very attractive. Here we describe a powerful aerosol-spray method for synthesizing various mesoporous metal oxides from low-cost nitrate salts. During spray, thermal heating of precursor droplets drives solvent evaporation and induces surfactant-directed formation of mesostructures, nitrate decomposition and oxide cross-linking. Thirteen types of monometallic oxides and four groups of complex ones are successfully produced, with mesoporous iron oxide microspheres demonstrated for photocatalytic oxygen evolution and gas sensing with superior performances. PMID:25897988

  5. Ordered mesoporous alumina-supported metal oxides.

    PubMed

    Morris, Stacy M; Fulvio, Pasquale F; Jaroniec, Mietek

    2008-11-12

    The one-pot synthesis of alumina-supported metal oxides via self-assembly of a metal precursor and aluminum isopropoxide in the presence of triblock copolymer (as a structure directing agent) is described in detail for nickel oxide. The resulting mesoporous mixed metal oxides possess p6 mm hexagonal symmetry, well-developed mesoporosity, relatively high BET surface area, large pore widths, and crystalline pore walls. In comparison to pure alumina, nickel aluminum oxide samples exhibited larger mesopores and improved thermal stability. Also, long-range ordering of the aforementioned samples was observed for nickel molar percentages as high as 20%. The generality of the recipe used for the synthesis of mesoporous nickel aluminum oxide was demonstrated by preparation of other alumina-supported metal oxides such as MgO, CaO, TiO 2, and Cr 2O 3. This method represents an important step toward the facile and reproducible synthesis of ordered mesoporous alumina-supported materials for various applications where large and accessible pores with high loading of catalytically active metal oxides are needed.

  6. Understanding the interface between oxides and metals.

    PubMed

    Catlow, C Richard A; French, Samuel A; Sokol, Alexey A; Alfredsson, Maria; Bromley, Stefan T

    2003-01-01

    Computational methods based on DFT are applied to modelling structure and bonding in oxide supported metals. We examined three systems of contemporary interest: Cu/ZnO, Pd,Pt/ZrO2 and bimetallic transition metal clusters on silica supports. PMID:14527217

  7. Topological States of Heterostructures

    NASA Astrophysics Data System (ADS)

    Usanmaz, Demet; Nath, Pinku; Plata, Jose J.; Buongiorno Nardelli, Marco; Fornari, Marco; Curtarolo, Stefano

    Topological insulators (TIs) have exotic properties, such as having insulating behavior in the bulk and metallic states at the surface [1]. Observations of metallic states rely on the spin-orbit induced band inversion in bulk materials and are protected by time-reversal symmetry or crystal symmetry [ 2 ]. These remarkable characteristics of TIs give rise to various applications from spintronics to quantum computers. In order to broaden the range of applications of TIs and make it more effective, an exploration of high quality heterostructures are required. Creating heterostructures of TIs has recently demonstrated to be advantageous for controlling electronic properties [3]. Inspired by these interesting properties, we have investigated the topological interface states of heterostructures.

  8. Pure electronic metal-insulator transition at the interface of complex oxides.

    PubMed

    Meyers, D; Liu, Jian; Freeland, J W; Middey, S; Kareev, M; Kwon, Jihwan; Zuo, J M; Chuang, Yi-De; Kim, J W; Ryan, P J; Chakhalian, J

    2016-01-01

    In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change. PMID:27324948

  9. Pure electronic metal-insulator transition at the interface of complex oxides

    PubMed Central

    Meyers, D.; Liu, Jian; Freeland, J. W.; Middey, S.; Kareev, M.; Kwon, Jihwan; Zuo, J. M.; Chuang, Yi-De; Kim, J. W.; Ryan, P. J.; Chakhalian, J.

    2016-01-01

    In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change. PMID:27324948

  10. Pure electronic metal-insulator transition at the interface of complex oxides

    NASA Astrophysics Data System (ADS)

    Meyers, D.; Liu, Jian; Freeland, J. W.; Middey, S.; Kareev, M.; Kwon, Jihwan; Zuo, J. M.; Chuang, Yi-De; Kim, J. W.; Ryan, P. J.; Chakhalian, J.

    2016-06-01

    In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.

  11. Metal-insulator transitions in two dimensions at zero magnetic field in a p-type gallium arsenide heterostructure

    NASA Astrophysics Data System (ADS)

    Dultz, Shane Cole

    Presented in this work is a comparative study of two different two dimensional systems in GaAs heterostructures. In the two dimensional hole system, electron-electron interactions are strong and possibly the reason for an anomolous temperature dependence in the resistivity that is reminiscent of metallic behavior which is known not to exist in a non-interacting two dimensional Fermi gas. The other system is an electron system where interactions are much weaker and whose properties have been understood in the context of Fermi liquid theory. In the first set of experiments, the delocalized states of the two dimensional hole system in a p-type GaAs heterostructure are tracked in density-magnetic field parameter space to find qualitatively very different behavior from what is found in the weakly interacting electron system. The lowest delocalized state which corresponds to the lowest Landau level in high magnetic fields, is found to float up in energy as the magnetic field is reduced to zero for the electron system. We found that there is an absence of this floating for the hole system and discuss this in the context of the recently discovered metal-insulator transition at B = 0. We further investigate the high temperature properties of the hole system by analyzing the resistivity to temperatures as high as 120 K to see how well the strongly interacting hole system fits what is expected from acoustic and optical phonon scattering. This is done over a wide range of densities and temperatures so that we could understand what sort of temperature dependence is truly considered anomolous in low temperatures. Finally, the compressibility of both systems is studied. An unequivocal signature for a phase transition is found in the compressibility measurements for the hole system with a temperature independent crossing point in the resistance of the gas occurring at the minimum of the inverse compressibility signal as a function of density (disorder). Differences in the way the

  12. PLUTONIUM METAL: OXIDATION CONSIDERATIONS AND APPROACH

    SciTech Connect

    Estochen, E.

    2013-03-20

    Plutonium is arguably the most unique of all metals when considered in the combined context of metallurgical, chemical, and nuclear behavior. Much of the research in understanding behavior and characteristics of plutonium materials has its genesis in work associated with nuclear weapons systems. However, with the advent of applications in fuel materials, the focus in plutonium science has been more towards nuclear fuel applications, as well as long term storage and disposition. The focus of discussion included herein is related to preparing plutonium materials to meet goals consistent with non-proliferation. More specifically, the emphasis is on the treatment of legacy plutonium, in primarily metallic form, and safe handling, packaging, and transport to meet non-proliferation goals of safe/secure storage. Elevated temperature oxidation of plutonium metal is the treatment of choice, due to extensive experiential data related to the method, as the oxide form of plutonium is one of only a few compounds that is relatively simple to produce, and stable over a large temperature range. Despite the simplicity of the steps required to oxidize plutonium metal, it is important to understand the behavior of plutonium to ensure that oxidation is conducted in a safe and effective manner. It is important to understand the effect of changes in environmental variables on the oxidation characteristics of plutonium. The primary purpose of this report is to present a brief summary of information related to plutonium metal attributes, behavior, methods for conversion to oxide, and the ancillary considerations related to processing and facility safety. The information provided is based on data available in the public domain and from experience in oxidation of such materials at various facilities in the United States. The report is provided as a general reference for implementation of a simple and safe plutonium metal oxidation technique.

  13. Stoichiometry-driven metal-to-insulator transition in NdTiO3/SrTiO3 heterostructures

    NASA Astrophysics Data System (ADS)

    Xu, Peng; Phelan, Daniel; Seok Jeong, Jong; Andre Mkhoyan, K.; Jalan, Bharat

    2014-02-01

    By controlling stoichiometry via a hybrid molecular beam epitaxy approach, we report on the study of thin film growth and the electronic transport properties of phase-pure, epitaxial NdTiO3/SrTiO3 heterostructures grown on (001) (La0.3Sr0.7)(Al0.65Ta0.35)O3 (LSAT) substrates as a function of cation stoichiometry in NdTiO3. Despite the symmetry mismatch between bulk NdTiO3 and the substrate, NdTiO3 films grew in an atomic layer-by-layer fashion over a range of cation stoichiometry; however amorphous films resulted in cases of extreme cation non-stoichiometry. Temperature-dependent sheet resistance measurements were consistent with Fermi-liquid metallic behavior over a wide temperature range, but revealed a remarkable crossover from metal-to-insulator (M-I) type behavior at low temperatures for all compositions. A direct correlation between cation stoichiometry, transport behavior, and the temperature of M-I transition is established.

  14. Enhanced photophysical properties of plasmonic magnetic metal-alloyed semiconductor heterostructure nanocrystals: a case study for the Ag@Ni/Zn1-xMgxO system.

    PubMed

    Paul, Sumana; Ghosh, Sirshendu; Saha, Manas; De, S K

    2016-05-14

    Understanding the effect of homovalent cation alloying in wide band gap ZnO and the formation of metal-semiconductor heterostructures is very important for maximisation of the photophysical properties of ZnO. Nearly monodisperse ZnO nanopyramid and Mg alloyed ZnO nanostructures have been successfully synthesized by one pot decomposition of metal stearate by using oleylamine both as activating and capping agent. The solid solubility of Mg(ii) ions in ZnO is limited to ∼30% without phase segregation. An interesting morphology change is found on increasing Mg alloying: from nanopyramids to self-assembled nanoflowers. The morphology change is explained by the oriented attachment process. The introduction of Mg into the ZnO matrix increases the band gap of the materials and also generates new zinc interstitial (Zni) and oxygen vacancy related defects. Plasmonic magnetic Ag@Ni core-shell (Ag as core and Ni as shell) nanocrystals are used as a seed material to synthesize Ag@Ni/Zn1-xMgxO complex heterostructures. Epitaxial growth is established between Ag(111) and ZnO(110) planes in the heterostructure. An epitaxial metal-semiconductor interface is very crucial for complete electron-hole (e-h) separation and enhancement of the exciton lifetime. The alloyed semiconductor-metal heterostructure is observed to be highly photocatalytically active for dye degradation as well as photodetection. Incorporation of magnetic Ni(0) makes the photocatalyst superparamagnetic at room temperature which is found to be helpful for catalyst regeneration. PMID:27113320

  15. Lithium metal oxide electrodes for lithium batteries

    SciTech Connect

    Thackeray, Michael M.; Johnson, Christopher S.; Amine, Khalil; Kang, Sun-Ho

    2010-06-08

    An uncycled preconditioned electrode for a non-aqueous lithium electrochemical cell including a lithium metal oxide having the formula xLi.sub.2-yH.sub.yO.xM'O.sub.2.(1-x)Li.sub.1-zH.sub.zMO.sub.2 in which 0metal ion with an average trivalent oxidation state selected from two or more of the first row transition metals or lighter metal elements in the periodic table, and M' is one or more ions with an average tetravalent oxidation state selected from the first and second row transition metal elements and Sn. The xLi.sub.2-yH.sub.y.xM'O.sub.2.(1-x)Li.sub.1-zH.sub.zMO.sub.2 material is prepared by preconditioning a precursor lithium metal oxide (i.e., xLi.sub.2M'O.sub.3.(1-x)LiMO.sub.2) with a proton-containing medium with a pH<7.0 containing an inorganic acid. Methods of preparing the electrodes are disclosed, as are electrochemical cells and batteries containing the electrodes.

  16. Oxide charge accumulation in metal oxide semiconductor devices during irradiation

    SciTech Connect

    Lee, D. ); Chan, C. )

    1991-05-15

    An analysis of a simple physical model for radiation induced oxide charge accumulation in the SiO{sub 2} layer of metal oxide semiconductor (MOS) structure has been developed. The model assumes that both electron and hole traps exist in the oxide layer. These traps can capture electrons as well as holes during irradiation. Using this model, final oxide charge distributions in the oxide layer of MOS capacitors exposed to a total dose radiation can be predicted. The resulting charge distribution is calculated to yield the midgap voltage shifts as functions of total dose, bias voltage, and oxide thickness. The results are shown to agree well with the experimental data. Furthermore, the model successfully analyzes the radiation-induced negative oxide charge distribution in an ion-implanted, radiation-hard MOS capacitor. These negative oxide charge distributions not only partially compensate the effects of trapped positive oxide charges but also reduced the density of positive oxide charges trapped near the Si/SiO{sub 2} interface. We found the reduction of the positive oxide charge density near the Si/SiO{sub 2} interface is due to internal electric field modification in the oxide layer.

  17. Spectral and photoelectric characteristics of the gamma irradiated intrinsic oxide-InSe heterostructures obtained under different conditions

    NASA Astrophysics Data System (ADS)

    Sydor, O. M.

    2016-09-01

    The investigations of photoelectric characteristics and photoresponce spectral dependences were carried out for intrinsic oxide-InSe heterostructures (HSs) and their changes induced by bremsstrahlung γ-quanta with an energy of 1-34 MeV at fluences of 1012-1015 cm-2. The thermal oxidation of the p-InSe:Cd substrates was carried out at a temperature of 420 °C. For three selected groups of samples the duration of the process was 15 min, 60 min, and 96 h. At a short-term oxidation (15 and 60 min) a layer of In2O3 appears. The only difference between the samples of these two groups is a higher photosensitivity in the range of energy 1.25-2.8 eV of the HSs obtained after the 60 min oxidation. At the long-term oxidation the photoresponce spectra η(hν) of the obtained HSs are characterized with a sharp short-wavelength decrease at hν≅2.0 eV. It is established that the intrinsic oxide films act as transparent barrier electrodes in the corresponding HSs and are low-sensitive to γ-irradiation in the all range of fluences. The shape of the photoresponce spectra for all the gamma irradiated HSs remains practically the same. However, it was found: (i) some decrease of photosensitivity at the long-wavelength edge, (ii) decreasing the width of η(hν) at half-height, (iii) the appearance of the exciton peak, (iv) the improvement of a slope of the low-energy edge of the photoresponce spectra with increasing irradiation dose whereas at the maximum fluence this parameter decreases, and (v) the slight extension of the spectral sensitivity to the short-wavelength range for the structures obtained after oxidation for 96 h. The photoelectric parameters of the intrinsic oxide-p-InSe HSs, open circuit voltage Voc, short-circuit current Jsc, current SIλmax and voltage SVλmax sensitivities become only improved after irradiation with the fluences 1012-1013 cm-2. At the maximum fluence a small decreasing of the values of Voc and Jsc was detected except for the structures obtained

  18. Co-Al mixed metal oxides/carbon nanotubes nanocomposite prepared via a precursor route and enhanced catalytic property

    NASA Astrophysics Data System (ADS)

    Fan, Guoli; Wang, Hui; Xiang, Xu; Li, Feng

    2013-01-01

    The present work reported the synthesis of Co-Al mixed metal oxides/carbon nanotubes (CoAl-MMO/CNT) nanocomposite from Co-Al layered double hydroxide/CNTs composite precursor (CoAl-LDH/CNT). The materials were characterized by powder X-ray diffraction (XRD), transmission electron microscopy (TEM), low temperature nitrogen adsorption-desorption experiments, thermogravimetric and differential thermal analyses (TG-DTA), Raman spectra and X-ray photoelectron spectroscopy (XPS). The results revealed that in CoAl-MMO/CNT nanocomposite, the nanoparticles of cobalt oxide (CoO) and Co-containing spinel-type complex metal oxides could be well-dispersed on the surface of CNTs, thus forming the heterostructure of CoAl-MMO and CNTs. Furthermore, as-synthesized CoAl-MMO/CNT nanocomposite was utilized as additives for catalytic thermal decomposition of ammonium perchlorate (AP). Compared to those for pure AP and CoAl-MMO, the peak temperature of AP decomposition for CoAl-MMO/CNT was significantly decreased, which is attributed to the novel heterostructure and synergistic effect of multi-component metal oxides of nanocomposite.

  19. Metal sulfide initiators for metal oxide sorbent regeneration

    DOEpatents

    Turk, B.S.; Gupta, R.P.

    1999-06-22

    A process of regenerating a sulfided sorbent is provided. According to the process of the invention, a substantial portion of the energy necessary to initiate the regeneration reaction is provided by the combustion of a particulate metal sulfide additive. In using the particulate metal sulfide additive, the oxygen-containing gas used to regenerate the sulfided sorbent can be fed to the regeneration zone without heating or at a lower temperature than used in conventional processes wherein the regeneration reaction is initiated only by heating the oxygen-containing gas. The particulate metal sulfide additive is preferably an inexpensive mineral ore such as iron pyrite which does not adversely affect the regeneration or corresponding desulfurization reactions. The invention further includes a sorbent composition comprising the particulate metal sulfide additive in admixture with an active metal oxide sorbent capable of removing one or more sulfur compounds from a sulfur-containing gas stream. 1 fig.

  20. Metal sulfide initiators for metal oxide sorbent regeneration

    DOEpatents

    Turk, Brian S.; Gupta, Raghubir P.

    1999-01-01

    A process of regenerating a sulfided sorbent is provided. According to the process of the invention, a substantial portion of the energy necessary to initiate the regeneration reaction is provided by the combustion of a particulate metal sulfide additive. In using the particulate metal sulfide additive, the oxygen-containing gas used to regenerate the sulfided sorbent can be fed to the regeneration zone without heating or at a lower temperature than used in conventional processes wherein the regeneration reaction is initiated only by heating the oxygen-containing. The particulate metal sulfide additive is preferably an inexpensive mineral ore such as iron pyrite which does not adversely affect the regeneration or corresponding desulfurization reactions. The invention further includes a sorbent composition comprising the particulate metal sulfide additive in admixture with an active metal oxide sorbent capable of removing one or more sulfur compounds from a sulfur-containing gas stream.

  1. Metal sulfide initiators for metal oxide sorbent regeneration

    DOEpatents

    Turk, Brian S.; Gupta, Raghubir P.

    2001-01-01

    A process of regenerating a sulfided sorbent is provided. According to the process of the invention, a substantial portion of the energy necessary to initiate the regeneration reaction is provided by the combustion of a particulate metal sulfide additive. In using the particulate metal sulfide additive, the oxygen-containing gas used to regenerate the sulfided sorbent can be fed to the regeneration zone without heating or at a lower temperature than used in conventional processes wherein the regeneration reaction is initiated only by heating the oxygen-containing gas. The particulate metal sulfide additive is preferably an inexpensive mineral ore such as iron pyrite which does not adversely affect the regeneration or corresponding desulfurization reactions. The invention further includes a sorbent composition comprising the particulate metal sulfide additive in admixture with an active metal oxide sorbent capable of removing one or more sulfur compounds from a sulfur-containing gas stream.

  2. Photovoltaic effect in an indium-tin-oxide/ZnO/BiFeO{sub 3}/Pt heterostructure

    SciTech Connect

    Fan, Zhen; Yao, Kui E-mail: msewangj@nus.edu.sg; Wang, John E-mail: msewangj@nus.edu.sg

    2014-10-20

    We have studied the photovoltaic effect in a metal/semiconductor/ferroelectric/metal heterostructure of In{sub 2}O{sub 3}-SnO{sub 2}/ZnO/BiFeO{sub 3}/Pt (ITO/ZnO/BFO/Pt) multilayer thin films. The heterolayered structure shows a short-circuit current density (J{sub sc}) of 340 μA/cm{sup 2} and an energy conversion efficiency of up to 0.33% under blue monochromatic illumination. The photovoltaic mechanism, specifically in terms of the major generation site of photo-excited electron-hole (e-h) pairs and the driving forces for the separation of e-h pairs, is clarified. The significant increase in photocurrent of the ITO/ZnO/BFO/Pt compared to that of ITO/BFO/Pt is attributed to the abundant e-h pairs generated from ZnO. Ultraviolet photoelectron spectroscopy reveals the energy band alignment of ITO/ZnO/BFO/Pt, where a Schottky barrier and an n{sup +}-n junction are formed at the BFO/Pt and ZnO/BFO interfaces, respectively. Therefore, two built-in fields developed at the two interfaces are constructively responsible for the separation and transport of photo-excited e-h pairs.

  3. Regeneration of sulfated metal oxides and carbonates

    DOEpatents

    Hubble, Bill R.; Siegel, Stanley; Cunningham, Paul T.

    1978-03-28

    Alkali metal or alkaline earth metal carbonates such as calcium carbonate and magnesium carbonate found in dolomite or limestone are employed for removal of sulfur dioxide from combustion exhaust gases. The sulfated carbonates are regenerated to oxides through use of a solid-solid reaction, particularly calcium sulfide with calcium sulfate to form calcium oxide and sulfur dioxide gas. The regeneration is performed by contacting the sulfated material with a reductant gas such as hydrogen within an inert diluent to produce calcium sulfide in mixture with the sulfate under process conditions selected to permit the sulfide-sulfate, solid-state reaction to occur.

  4. James C. McGroddy Prize Talk: Controlling and Manipulating Ferromagnetism with an Electric Field Using Multiferroic Oxide Heterostructures

    NASA Astrophysics Data System (ADS)

    Ramesh, R.

    2010-03-01

    Complex perovskite oxides exhibit a rich spectrum of functional responses, including magnetism, ferroelectricity, highly correlated electron behavior, superconductivity, etc. The basic materials physics of such materials provide the ideal playground for interdisciplinary scientific exploration. Over the past decade we have been exploring the science of such materials (for example, colossal magnetoresistance, ferroelectricity, etc) in thin film form by creating epitaxial heterostructures and nanostructures. Among the large number of materials systems, there exists a small set of materials which exhibit multiple order parameters; these are known as multiferroics. Using our work in the field of ferroelectric and ferromagnetic oxides as the background, we are now exploring such materials, as epitaxial thin films as well as nanostructures. A particularly interesting problem is that related to electric field control and manipulation of ferromagnetism. In this talk I will describe to you some aspects of such materials as well as the scientific and technological excitement in this field. Finally I will share my ideas on the most exciting open problems and emerging directions in multiferroics and beyond.

  5. Monitoring non-pseudomorphic epitaxial growth of spinel/perovskite oxide heterostructures by reflection high-energy electron diffraction

    SciTech Connect

    Schütz, P.; Pfaff, F.; Scheiderer, P.; Sing, M.; Claessen, R.

    2015-02-09

    Pulsed laser deposition of spinel γ-Al{sub 2}O{sub 3} thin films on bulk perovskite SrTiO{sub 3} is monitored by high-pressure reflection high-energy electron diffraction (RHEED). The heteroepitaxial combination of two materials with different crystal structures is found to be inherently accompanied by a strong intensity modulation of bulk diffraction patterns from inelastically scattered electrons, which impedes the observation of RHEED intensity oscillations. Avoiding such electron surface-wave resonance enhancement by de-tuning the RHEED geometry allows for the separate observation of the surface-diffracted specular RHEED signal and thus the real-time monitoring of sub-unit cell two-dimensional layer-by-layer growth. Since these challenges are essentially rooted in the difference between film and substrate crystal structure, our findings are of relevance for the growth of any heterostructure combining oxides with different crystal symmetry and may thus facilitate the search for novel oxide heterointerfaces.

  6. Reduction of metal oxides through mechanochemical processing

    DOEpatents

    Froes, Francis H.; Eranezhuth, Baburaj G.; Senkov, Oleg N.

    2000-01-01

    The low temperature reduction of a metal oxide using mechanochemical processing techniques. The reduction reactions are induced mechanically by milling the reactants. In one embodiment of the invention, titanium oxide TiO.sub.2 is milled with CaH.sub.2 to produce TiH.sub.2. Low temperature heat treating, in the range of 400.degree. C. to 700.degree. C., can be used to remove the hydrogen in the titanium hydride.

  7. Role of metal oxides in chemical evolution

    NASA Astrophysics Data System (ADS)

    Kamaluddin

    2013-06-01

    Steps of chemical evolution have been designated as formation of biomonomers followed by their polymerization and then to modify in an organized structure leading to the formation of first living cell. Formation of small molecules like amino acids, organic bases, sugar etc. could have occurred in the reducing atmosphere of the primitive Earth. Polymerization of these small molecules could have required some catalyst. In addition to clay, role of metal ions and metal complexes as prebiotic catalyst in the synthesis and polymerization of biomonomers cannot be ruled out. Metal oxides are important constituents of Earth crust and that of other planets. These oxides might have adsorbed organic molecules and catalyzed the condensation processes, which may have led to the formation of first living cell. Different studies were performed in order to investigate the role of metal oxides (especially oxides of iron and manganese) in chemical evolution. Iron oxides (goethite, akaganeite and hematite) as well as manganese oxides (MnO, Mn2O3, Mn3O4 and MnO2) were synthesized and their characterization was done using IR, powder XRD, FE-SEM and TEM. Role of above oxides was studied in the adsorption of ribose nucleotides, formation of nucleobases from formamide and oligomerization of amino acids. Above oxides of iron and manganese were found to have good adsorption affinity towards ribose nucleotides, high catalytic activity in the formation of several nucleobases from formamide and oligomerization of glycine and alanine. Characterization of products was performed using UV, IR, HPLC and ESI-MS techniques. Presence of hematite-water system on Mars has been suggested to be a positive indicator in the chemical evolution on Mars.

  8. Black phosphorene/monolayer transition-metal dichalcogenides as two dimensional van der Waals heterostructures: a first-principles study.

    PubMed

    You, Baiqing; Wang, Xiaocha; Zheng, Zhida; Mi, Wenbo

    2016-03-14

    The electronic structure of black phosphorene (BP)/monolayer 1H-XT2 (X = Mo, W; T = S, Se, Te) two dimensional (2D) van der Waals heterostructures have been calculated by the first-principles method. It is found that the electronic band structures of both BP and XT2 are preserved in the combined van der Waals heterostructures. The WSe2/BP van der Waals heterostructure demonstrates a type-I band alignment, but the MoS2/BP, MoSe2/BP, MoTe2/BP, WS2/BP and WTe2/BP van der Waals heterostructures demonstrate a type-II band alignment. In particular, the n-type XT2/p-type BP van der Waals heterostructures can be applied in p-n diode and logical devices. Strong spin splitting appears in all of the heterostructures when considering the spin orbital coupling. Our results play a significant role in the prediction of novel 2D van der Waals heterostructures that have potential applications in spin-filter devices, spin field effect transistors, optoelectronic devices, etc. PMID:26899350

  9. Probing Interlayer Interactions in Transition Metal Dichalcogenide Heterostructures by Optical Spectroscopy: MoS2/WS2 and MoSe2/WSe2.

    PubMed

    Rigosi, Albert F; Hill, Heather M; Li, Yilei; Chernikov, Alexey; Heinz, Tony F

    2015-08-12

    We have applied optical absorption spectroscopy to investigate van der Waals heterostructures formed of pairs of monolayer transition metal dichalcogenide crystals, choosing MoS2/WS2 and MoSe2/WSe2 as test cases. In the heterostructure spectra, we observe a significant broadening of the excitonic transitions compared to the corresponding features in the isolated layers. The broadening is interpreted as a lifetime effect arising from decay of excitons initially created in either layer through charge transfer processes expected for a staggered band alignment. The measured spectral broadening of 20 meV - 35 meV implies lifetimes for charge separation of the near band-edge A and B excitons in the range of 20-35 fs. Higher-lying transitions exhibit still greater broadening.

  10. InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Shapiro, J. N.; Lin, A.; Wong, P. S.; Scofield, A. C.; Tu, C.; Senanayake, P. N.; Mariani, G.; Liang, B. L.; Huffaker, D. L.

    2010-12-01

    We investigate axial GaAs/InGaAs/GaAs heterostructures embedded in GaAs nanopillars via catalyst-free selective-area metal-organic chemical vapor deposition. Structural characterization by transmission electron microscopy with energy dispersive x-ray spectroscopy (EDS) indicates formation of axial InxGa1-xAs (x˜0.20) inserts with thicknesses from 36 to 220 nm with ±10% variation and graded Ga:In transitions controlled by In segregation. Using the heterointerfaces as markers, the vertical growth rate is determined to increase linearly during growth. Photoluminescence from 77 to 290 K and EDS suggest the presence of strain in the shortest inserts. This capability to control the formation of axial nanopillar heterostructures is crucial for optimized device integration.

  11. Photoelectrochemical water splitting enhanced by self-assembled metal nanopillars embedded in an oxide semiconductor photoelectrode

    NASA Astrophysics Data System (ADS)

    Kawasaki, Seiji; Takahashi, Ryota; Yamamoto, Takahisa; Kobayashi, Masaki; Kumigashira, Hiroshi; Yoshinobu, Jun; Komori, Fumio; Kudo, Akihiko; Lippmaa, Mikk

    2016-06-01

    Production of chemical fuels by direct solar energy conversion in a photoelectrochemical cell is of great practical interest for developing a sustainable energy system. Various nanoscale designs such as nanowires, nanotubes, heterostructures and nanocomposites have been explored to increase the energy conversion efficiency of photoelectrochemical water splitting. Here we demonstrate a self-organized nanocomposite material concept for enhancing the efficiency of photocarrier separation and electrochemical energy conversion. Mechanically robust photoelectrodes are formed by embedding self-assembled metal nanopillars in a semiconductor thin film, forming tubular Schottky junctions around each pillar. The photocarrier transport efficiency is strongly enhanced in the Schottky space charge regions while the pillars provide an efficient charge extraction path. Ir-doped SrTiO3 with embedded iridium metal nanopillars shows good operational stability in a water oxidation reaction and achieves over 80% utilization of photogenerated carriers under visible light in the 400- to 600-nm wavelength range.

  12. Photoelectrochemical water splitting enhanced by self-assembled metal nanopillars embedded in an oxide semiconductor photoelectrode

    PubMed Central

    Kawasaki, Seiji; Takahashi, Ryota; Yamamoto, Takahisa; Kobayashi, Masaki; Kumigashira, Hiroshi; Yoshinobu, Jun; Komori, Fumio; Kudo, Akihiko; Lippmaa, Mikk

    2016-01-01

    Production of chemical fuels by direct solar energy conversion in a photoelectrochemical cell is of great practical interest for developing a sustainable energy system. Various nanoscale designs such as nanowires, nanotubes, heterostructures and nanocomposites have been explored to increase the energy conversion efficiency of photoelectrochemical water splitting. Here we demonstrate a self-organized nanocomposite material concept for enhancing the efficiency of photocarrier separation and electrochemical energy conversion. Mechanically robust photoelectrodes are formed by embedding self-assembled metal nanopillars in a semiconductor thin film, forming tubular Schottky junctions around each pillar. The photocarrier transport efficiency is strongly enhanced in the Schottky space charge regions while the pillars provide an efficient charge extraction path. Ir-doped SrTiO3 with embedded iridium metal nanopillars shows good operational stability in a water oxidation reaction and achieves over 80% utilization of photogenerated carriers under visible light in the 400- to 600-nm wavelength range. PMID:27255209

  13. Photoelectrochemical water splitting enhanced by self-assembled metal nanopillars embedded in an oxide semiconductor photoelectrode.

    PubMed

    Kawasaki, Seiji; Takahashi, Ryota; Yamamoto, Takahisa; Kobayashi, Masaki; Kumigashira, Hiroshi; Yoshinobu, Jun; Komori, Fumio; Kudo, Akihiko; Lippmaa, Mikk

    2016-01-01

    Production of chemical fuels by direct solar energy conversion in a photoelectrochemical cell is of great practical interest for developing a sustainable energy system. Various nanoscale designs such as nanowires, nanotubes, heterostructures and nanocomposites have been explored to increase the energy conversion efficiency of photoelectrochemical water splitting. Here we demonstrate a self-organized nanocomposite material concept for enhancing the efficiency of photocarrier separation and electrochemical energy conversion. Mechanically robust photoelectrodes are formed by embedding self-assembled metal nanopillars in a semiconductor thin film, forming tubular Schottky junctions around each pillar. The photocarrier transport efficiency is strongly enhanced in the Schottky space charge regions while the pillars provide an efficient charge extraction path. Ir-doped SrTiO3 with embedded iridium metal nanopillars shows good operational stability in a water oxidation reaction and achieves over 80% utilization of photogenerated carriers under visible light in the 400- to 600-nm wavelength range. PMID:27255209

  14. Metal oxide electrocatalysts for alternative energy technologies

    NASA Astrophysics Data System (ADS)

    Pacquette, Adele Lawren

    This dissertation focuses on the development of metal oxide electrocatalysts with varying applications for alternative energy technologies. Interest in utilizing clean, renewable and sustainable sources of energy for powering the planet in the future has received much attention. This will address the growing concern of the need to reduce our dependence on fossil fuels. The facile synthesis of metal oxides from earth abundant metals was explored in this work. The electrocatalysts can be incorporated into photoelectrochemical devices, fuel cells, and other energy storage devices. The first section addresses the utilization of semiconductors that can harness solar energy for water splitting to generate hydrogen. An oxysulfide was studied in order to combine the advantageous properties of the stability of metal oxides and the visible light absorbance of metal chalcogenides. Bi 2O2S was synthesized under facile hydrothermal conditions. The band gap of Bi2O2S was smaller than that of its oxide counterpart, Bi2O3. Light absorption by Bi 2O2S was extended to the visible region (>600 nm) in comparison to Bi2O3. The formation of a composite with In 2O3 was formed in order to create a UV irradiation protective coating of the Bi2O2S. The Bi2O2S/In 2O3 composite coupled with a dye CrTPP(Cl) and cocatalysts Pt and Co3O4 was utilized for water splitting under light irradiation to generate hydrogen and oxygen. The second section focuses on improving the stability and light absorption of semiconductors by changing the shapes and morphologies. One of the limitations of semiconductor materials is that recombination of electron-hole pairs occur within the bulk of the materials instead of migration to the surface. Three-dimensional shapes, such as nanorods, can prevent this recombination in comparison to spherical particles. Hierarchical structures, such as dendrites, cubes, and multipods, were synthesized under hydrothermal conditions, in order to reduce recombination and improve

  15. Multi-metal oxide ceramic nanomaterial

    DOEpatents

    O'Brien, Stephen; Liu, Shuangyi; Huang, Limin

    2016-06-07

    A convenient and versatile method for preparing complex metal oxides is disclosed. The method uses a low temperature, environmentally friendly gel-collection method to form a single phase nanomaterial. In one embodiment, the nanomaterial consists of Ba.sub.AMn.sub.BTi.sub.CO.sub.D in a controlled stoichiometry.

  16. Microbial-mediated method for metal oxide nanoparticle formation

    DOEpatents

    Rondinone, Adam J.; Moon, Ji Won; Love, Lonnie J.; Yeary, Lucas W.; Phelps, Tommy J.

    2015-09-08

    The invention is directed to a method for producing metal oxide nanoparticles, the method comprising: (i) subjecting a combination of reaction components to conditions conducive to microbial-mediated formation of metal oxide nanoparticles, wherein said combination of reaction components comprise: metal-reducing microbes, a culture medium suitable for sustaining said metal-reducing microbes, an effective concentration of one or more surfactants, a reducible metal oxide component containing one or more reducible metal species, and one or more electron donors that provide donatable electrons to said metal-reducing microbes during consumption of the electron donor by said metal-reducing microbes; and (ii) isolating said metal oxide nanoparticles, which contain a reduced form of said reducible metal oxide component. The invention is also directed to metal oxide nanoparticle compositions produced by the inventive method.

  17. Ultrafast Study of Dynamic interfacial Exchange Coupling in Ferromagnet/Oxide/Semiconductor Heterostructures

    NASA Astrophysics Data System (ADS)

    Ou, Yu-Sheng; Chiu, Yi-Hsin; Harmon, Nicholas; Odenthal, Patrick; Sheffield, Matthew; Chilcote, Michael; Kawakami, Roland; Flatté, Michael; Johnston-Halperin, Ezekiel

    Time-resolved Kerr/Faraday rotation (TRKR/TRFR) is employed to study GaAs spin dynamics in the regime of strong and dynamic exchange coupling to an adjacent MgO/Fe layer. This study reveals a dramatic, resonant suppression in the inhomogeneous spin lifetime (T2*) in the GaAs layer. Further investigation of the magnetization dynamics of the neighboring Fe layer, also using TRKR/TRFR, reveals not only the expected Kittel-dispersion but also additional lower frequency modes with very short lifetime (65 ps) that are not easily observed with conventional ferromagnetic resonance (FMR) techniques. These results suggest the intriguing possibility of resonant dynamic spin transfer between the GaAs and Fe spin systems. We discuss the potential for this work to establish GaAs spin dynamics as an efficient detector of spin dissipation and transport in the regime of dynamically-driven spin injection in ferromagnet/semiconductor heterostructures. Center for Emergent Materials; U.S. Department of Energy.

  18. Exchange-Driven Spin Relaxation in Ferromagnet-Oxide-Semiconductor Heterostructures

    NASA Astrophysics Data System (ADS)

    Ou, Yu-Sheng; Chiu, Yi-Hsin; Harmon, N. J.; Odenthal, Patrick; Sheffield, Matthew; Chilcote, Michael; Kawakami, R. K.; Flatté, M. E.; Johnston-Halperin, E.

    2016-03-01

    We demonstrate that electron spin relaxation in GaAs in the proximity of a Fe /MgO layer is dominated by interaction with an exchange-driven hyperfine field at temperatures below 60 K. Temperature-dependent spin-resolved optical pump-probe spectroscopy reveals a strong correlation of the electron spin relaxation with carrier freeze-out, in quantitative agreement with a theoretical interpretation that at low temperatures the free-carrier spin lifetime is dominated by inhomogeneity in the local hyperfine field due to carrier localization. As the regime of large nuclear inhomogeneity is accessible in these heterostructures for magnetic fields <3 kG , inferences from this result resolve a long-standing and contentious dispute concerning the origin of spin relaxation in GaAs at low temperature when a magnetic field is present. Further, this improved fundamental understanding clarifies the importance of future experiments probing the time-dependent exchange interaction at a ferromagnet-semiconductor interface and its consequences for spin dissipation and transport during spin pumping.

  19. Physisorption mechanism in graphene/noble metal (111)/Ni(111) heterostructures: An ab-initio study

    NASA Astrophysics Data System (ADS)

    Moaddeli, Mohammad; Salehi, Hamdollah; Amiri, Peiman

    2016-08-01

    The 3D stacking of various 2D systems is an intelligent way of aiming to overcome the limitations usually faced by 2D systems. We study the adsorption of graphene on noble metal monolayers upon Ni (111) substrate, using density functional theory. The bonding mechanism at noble metal-graphene and noble metal-Ni interfaces is found to be physisorption and chemisorption, respectively. The bonding of graphene to Cu, Ag, and Au (111) monolayers is so weak that the conical shape of the Dirac point is preserved. The doping effects of a substrate lead to a small opening gap for gr/Cu/Ni and gr/Ag/Ni systems. These predictions are in agreement with experimental results. The intercalation of a noble metal monolayer between graphene and Ni (111) substrate changes the magnetic response from Ni surface and causes the formation of a ferrimagnetic system.

  20. Kelvin probe imaging of photo-injected electrons in metal oxide nanosheets from metal sulfide quantum dots under remote photochromic coloration

    NASA Astrophysics Data System (ADS)

    Kondo, A.; Yin, G.; Srinivasan, N.; Atarashi, D.; Sakai, E.; Miyauchi, M.

    2015-07-01

    Metal oxide and quantum dot (QD) heterostructures have attracted considerable recent attention as materials for developing efficient solar cells, photocatalysts, and display devices, thus nanoscale imaging of trapped electrons in these heterostructures provides important insight for developing efficient devices. In the present study, Kelvin probe force microscopy (KPFM) of CdS quantum dot (QD)-grafted Cs4W11O362- nanosheets was performed before and after visible-light irradiation. After visible-light excitation of the CdS QDs, the Cs4W11O362- nanosheet surface exhibited a decreased work function in the vicinity of the junction with CdS QDs, even though the Cs4W11O362- nanosheet did not absorb visible light. X-ray photoelectron spectroscopy revealed that W5+ species were formed in the nanosheet after visible-light irradiation. These results demonstrated that excited electrons in the CdS QDs were injected and trapped in the Cs4W11O362- nanosheet to form color centers. Further, the CdS QDs and Cs4W11O362- nanosheet composite films exhibited efficient remote photochromic coloration, which was attributed to the quantum nanostructure of the film. Notably, the responsive wavelength of the material is tunable by adjusting the size of QDs, and the decoloration rate is highly efficient, as the required length for trapped electrons to diffuse into the nanosheet surface is very short owing to its nanoscale thickness. The unique properties of this photochromic device make it suitable for display or memory applications. In addition, the methodology described in the present study for nanoscale imaging is expected to aid in the understanding of electron transport and trapping processes in metal oxide and metal chalcogenide heterostructure, which are crucial phenomena in QD-based solar cells and/or photocatalytic water-splitting systems.Metal oxide and quantum dot (QD) heterostructures have attracted considerable recent attention as materials for developing efficient solar cells

  1. Method for producing nanostructured metal-oxides

    SciTech Connect

    Tillotson, Thomas M.; Simpson, Randall L.; Hrubesh, Lawrence W.; Gash, Alexander

    2006-01-17

    A synthetic route for producing nanostructure metal-oxide-based materials using sol-gel processing. This procedure employs the use of stable and inexpensive hydrated-metal inorganic salts and environmentally friendly solvents such as water and ethanol. The synthesis involves the dissolution of the metal salt in a solvent followed by the addition of a proton scavenger, which induces gel formation in a timely manner. Both critical point (supercritical extraction) and atmospheric (low temperature evaporation) drying may be employed to produce monolithic aerogels and xerogels, respectively. Using this method synthesis of metal-oxide nanostructured materials have been carried out using inorganic salts, such as of Fe.sup.3+, Cr.sup.3+, Al.sup.3+, Ga.sup.3+, In.sup.3+, Hf.sup.4+, Sn.sup.4+, Zr.sup.4+, Nb.sup.5+, W.sup.6+, Pr.sup.3+, Er.sup.3+, Nd.sup.3+, Ce.sup.3+, U.sup.3+ and Y.sup.3+. The process is general and nanostructured metal-oxides from the following elements of the periodic table can be made: Groups 2 through 13, part of Group 14 (germanium, tin, lead), part of Group 15 (antimony, bismuth), part of Group 16 (polonium), and the lanthanides and actinides. The sol-gel processing allows for the addition of insoluble materials (e.g., metals or polymers) to the viscous sol, just before gelation, to produce a uniformly distributed nanocomposites upon gelation. As an example, energetic nanocomposites of Fe.sub.xO.sub.y gel with distributed Al metal are readily made. The compositions are stable, safe, and can be readily ignited to thermitic reaction.

  2. Apparatus enables accurate determination of alkali oxides in alkali metals

    NASA Technical Reports Server (NTRS)

    Dupraw, W. A.; Gahn, R. F.; Graab, J. W.; Maple, W. E.; Rosenblum, L.

    1966-01-01

    Evacuated apparatus determines the alkali oxide content of an alkali metal by separating the metal from the oxide by amalgamation with mercury. The apparatus prevents oxygen and moisture from inadvertently entering the system during the sampling and analytical procedure.

  3. In-situ synthesis of highly efficient visible light driven stannic oxide/graphitic carbon nitride heterostructured photocatalysts.

    PubMed

    Tao, Binglin; Yan, Zifeng

    2016-10-15

    Novel and efficient visible-light-driven stannic oxide/graphitic carbon nitride heterostructured photocatalysts are prepared via a simple in-situ solvothermal method. Characterization results demonstrate that there exist strong interactions between SnO2 nanoparticles and g-C3N4 matrix, which indicates the formation of SnO2/g-C3N4 heterojunction. The as-synthesized SnO2/g-C3N4 composite exhibits improved efficiency for photodegradation of rhodamine B in aqueous solutions, with an apparent rate constant 6.5 times higher than that of commercial TiO2 (Degussa P25). The enhanced photocatalytic activity is attributed to synergistic effect between SnO2 and g-C3N4, resulting in effective interfacial charge transfer and prolonged charge-hole separation time. Moreover, SnO2/g-C3N4 composite photocatalysts possess excellent durability and stability after 6 recycling runs, and a possible photocatalytic mechanism is also proposed. This research highlights the promising applications of two dimensional g-C3N4 based composite photocatalysts in the field of waste water disposal and environmental remediation. PMID:27421114

  4. Kelvin probe imaging of photo-injected electrons in metal oxide nanosheets from metal sulfide quantum dots under remote photochromic coloration.

    PubMed

    Kondo, A; Yin, G; Srinivasan, N; Atarashi, D; Sakai, E; Miyauchi, M

    2015-08-01

    Metal oxide and quantum dot (QD) heterostructures have attracted considerable recent attention as materials for developing efficient solar cells, photocatalysts, and display devices, thus nanoscale imaging of trapped electrons in these heterostructures provides important insight for developing efficient devices. In the present study, Kelvin probe force microscopy (KPFM) of CdS quantum dot (QD)-grafted Cs4W11O36(2-) nanosheets was performed before and after visible-light irradiation. After visible-light excitation of the CdS QDs, the Cs4W11O36(2-) nanosheet surface exhibited a decreased work function in the vicinity of the junction with CdS QDs, even though the Cs4W11O36(2-) nanosheet did not absorb visible light. X-ray photoelectron spectroscopy revealed that W(5+) species were formed in the nanosheet after visible-light irradiation. These results demonstrated that excited electrons in the CdS QDs were injected and trapped in the Cs4W11O36(2-) nanosheet to form color centers. Further, the CdS QDs and Cs4W11O36(2-) nanosheet composite films exhibited efficient remote photochromic coloration, which was attributed to the quantum nanostructure of the film. Notably, the responsive wavelength of the material is tunable by adjusting the size of QDs, and the decoloration rate is highly efficient, as the required length for trapped electrons to diffuse into the nanosheet surface is very short owing to its nanoscale thickness. The unique properties of this photochromic device make it suitable for display or memory applications. In addition, the methodology described in the present study for nanoscale imaging is expected to aid in the understanding of electron transport and trapping processes in metal oxide and metal chalcogenide heterostructure, which are crucial phenomena in QD-based solar cells and/or photocatalytic water-splitting systems.

  5. Polymorphism Control in Nanostructured Metal Oxides

    NASA Astrophysics Data System (ADS)

    Sood, Shantanu

    Polymorphic phase transformations are common to all nanocrystalline binary metal oxides. The polymorphic nature of such metal oxides makes available a large number of phases with differing crystal structures, each stable under certain conditions of temperature, pressure, and/or particle size. These different crystal structures translate to unique physical and chemical properties for each structural class of polymorphs. Thus predicting when polymorphic phase transitions are likely to occur becomes important to the synthesis of stable functional materials with desired properties. Theoretical calculations using a heuristic approach have resulted in an accurate estimation of the critical particle size predicting metastable to stable phase transitions. This formula is applied to different case studies: for anatase to rutile titania; gamma-Alumina to alpha-Alumina; and tetragonal to monoclinic zirconia. The theoretical values calculated have been seen to be very close to the experimental results from the literature. Manifestation of the effect of phase transitions in nanostructured metal oxides was provided in the study of metastable to stable phase transitions in WO3. Nanowires of tungsten trioxide have been synthesized in-situ inside an electron microscope. Such structure of tungsten trioxide result due to a metastable to stable phase transformation, from the cubic to the monoclinic phase. The transformation is massive and complete. The structures formed are unique one-dimensional nanowires. Such a method can be scaled inside any equipment equipped with an electron gun, for example lithography systems either using STEM or E-beam lithography. Another study on nanowire formation in binary metal oxides involved the synthesis of stable orthorhombic MoO3 by means of blend electrospinning. Both a traditional single jet electrospinning set up and a novel high-throughput process to get high aspect ratio nanowires. The latter is a jet-controlled and flow controlled

  6. Optimal control of AlAs oxidation via digital alloy heterostructure compositions

    NASA Astrophysics Data System (ADS)

    Suárez, I.; Almuneau, G.; Condé, M.; Arnoult, A.; Fontaine, C.

    2009-09-01

    A thorough study of wet thermal oxidation in AlAs/AlxGa1-xAs superlattices is presented. The results shown here demonstrate that the final oxidation depth can be finely tuned via the composition and thickness of AlxGa1-xAs into the digital alloy. A complete model of oxidation in these structures is proposed, relying on diffusion through the AlAs layer, its oxidation and an additional effect due to the AlxGa1-xAs intermediate barriers. This barrier contribution is shown to further improve the control of the oxidation rate, and thereby fabrication of sophisticated AlOx/GaAs integrated optoelectronic devices.

  7. Spontaneous Formation of a Superconductor-Topological Insulator-Normal Metal Layered Heterostructure.

    PubMed

    Wang, Yu-Qi; Wu, Xu; Wang, Ye-Liang; Shao, Yan; Lei, Tao; Wang, Jia-Ou; Zhu, Shi-Yu; Guo, Haiming; Zhao, Ling-Xiao; Chen, Gen-Fu; Nie, Simin; Weng, Hong-Ming; Ibrahim, Kurash; Dai, Xi; Fang, Zhong; Gao, Hong-Jun

    2016-07-01

    2D materials with heterolayered structures beyond graphene are explored. A theoretically predicted superconductor-topological insulator-normal metal heterolayered structure is realized experimentally. The generated hybrid structure HfTe3 /HfTe5 /Hf has potential applications in both quantum-spin Hall effect-based and Majorana-based devices.

  8. 40 CFR 721.5548 - Mixed metal oxide (generic).

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Mixed metal oxide (generic). 721.5548... Substances § 721.5548 Mixed metal oxide (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as a mixed metal oxide (PMN P-97-956)...

  9. 40 CFR 721.4610 - Mixed metal oxides (generic).

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Mixed metal oxides (generic). 721.4610... Substances § 721.4610 Mixed metal oxides (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as mixed metal oxides (PMN...

  10. 40 CFR 721.5549 - Lithiated metal oxide.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Lithiated metal oxide. 721.5549... Substances § 721.5549 Lithiated metal oxide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as lithiated metal oxide (LiNiO2) (PMN...

  11. 40 CFR 721.4610 - Mixed metal oxides (generic).

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Mixed metal oxides (generic). 721.4610... Substances § 721.4610 Mixed metal oxides (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as mixed metal oxides (PMN...

  12. 40 CFR 721.4610 - Mixed metal oxides (generic).

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Mixed metal oxides (generic). 721.4610... Substances § 721.4610 Mixed metal oxides (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as mixed metal oxides (PMN...

  13. 40 CFR 721.10006 - Mixed metal oxide (generic).

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Mixed metal oxide (generic). 721.10006... Substances § 721.10006 Mixed metal oxide (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as mixed metal oxide (PMN...

  14. 40 CFR 721.5549 - Lithiated metal oxide.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Lithiated metal oxide. 721.5549... Substances § 721.5549 Lithiated metal oxide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as lithiated metal oxide (LiNiO2) (PMN...

  15. 40 CFR 721.4610 - Mixed metal oxides (generic).

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Mixed metal oxides (generic). 721.4610... Substances § 721.4610 Mixed metal oxides (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as mixed metal oxides (PMN...

  16. 40 CFR 721.5548 - Mixed metal oxide (generic).

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Mixed metal oxide (generic). 721.5548... Substances § 721.5548 Mixed metal oxide (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as a mixed metal oxide (PMN P-97-956)...

  17. 40 CFR 721.10006 - Mixed metal oxide (generic).

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Mixed metal oxide (generic). 721.10006... Substances § 721.10006 Mixed metal oxide (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as mixed metal oxide (PMN...

  18. 40 CFR 721.5548 - Mixed metal oxide (generic).

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Mixed metal oxide (generic). 721.5548... Substances § 721.5548 Mixed metal oxide (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as a mixed metal oxide (PMN P-97-956)...

  19. 40 CFR 721.5549 - Lithiated metal oxide.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Lithiated metal oxide. 721.5549... Substances § 721.5549 Lithiated metal oxide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as lithiated metal oxide (LiNiO2) (PMN...

  20. 40 CFR 721.4610 - Mixed metal oxides (generic).

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Mixed metal oxides (generic). 721.4610... Substances § 721.4610 Mixed metal oxides (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as mixed metal oxides (PMN...

  1. 40 CFR 721.10006 - Mixed metal oxide (generic).

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Mixed metal oxide (generic). 721.10006... Substances § 721.10006 Mixed metal oxide (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as mixed metal oxide (PMN...

  2. 40 CFR 721.10500 - Acrylated mixed metal oxides (generic).

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Acrylated mixed metal oxides (generic... Specific Chemical Substances § 721.10500 Acrylated mixed metal oxides (generic). (a) Chemical substance and... mixed metal oxides (PMN P-06-341) is subject to reporting under this section for the significant...

  3. 40 CFR 721.5548 - Mixed metal oxide (generic).

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Mixed metal oxide (generic). 721.5548... Substances § 721.5548 Mixed metal oxide (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as a mixed metal oxide (PMN P-97-956)...

  4. 40 CFR 721.5548 - Mixed metal oxide (generic).

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Mixed metal oxide (generic). 721.5548... Substances § 721.5548 Mixed metal oxide (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as a mixed metal oxide (PMN P-97-956)...

  5. 40 CFR 721.10500 - Acrylated mixed metal oxides (generic).

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Acrylated mixed metal oxides (generic... Specific Chemical Substances § 721.10500 Acrylated mixed metal oxides (generic). (a) Chemical substance and... mixed metal oxides (PMN P-06-341) is subject to reporting under this section for the significant...

  6. 40 CFR 721.10006 - Mixed metal oxide (generic).

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Mixed metal oxide (generic). 721.10006... Substances § 721.10006 Mixed metal oxide (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as mixed metal oxide (PMN...

  7. 40 CFR 721.10006 - Mixed metal oxide (generic).

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Mixed metal oxide (generic). 721.10006... Substances § 721.10006 Mixed metal oxide (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as mixed metal oxide (PMN...

  8. 40 CFR 721.5549 - Lithiated metal oxide.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Lithiated metal oxide. 721.5549... Substances § 721.5549 Lithiated metal oxide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as lithiated metal oxide (LiNiO2) (PMN...

  9. 40 CFR 721.5549 - Lithiated metal oxide.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Lithiated metal oxide. 721.5549... Substances § 721.5549 Lithiated metal oxide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as lithiated metal oxide (LiNiO2) (PMN...

  10. Reactor vessel using metal oxide ceramic membranes

    DOEpatents

    Anderson, Marc A.; Zeltner, Walter A.

    1992-08-11

    A reaction vessel for use in photoelectrochemical reactions includes as its reactive surface a metal oxide porous ceramic membrane of a catalytic metal such as titanium. The reaction vessel includes a light source and a counter electrode. A provision for applying an electrical bias between the membrane and the counter electrode permits the Fermi levels of potential reaction to be favored so that certain reactions may be favored in the vessel. The electrical biasing is also useful for the cleaning of the catalytic membrane.

  11. Interface control by chemical and dimensional matching in an oxide heterostructure

    NASA Astrophysics Data System (ADS)

    O'Sullivan, Marita; Hadermann, Joke; Dyer, Matthew S.; Turner, Stuart; Alaria, Jonathan; Manning, Troy D.; Abakumov, Artem M.; Claridge, John B.; Rosseinsky, Matthew J.

    2016-04-01

    Interfaces between different materials underpin both new scientific phenomena, such as the emergent behaviour at oxide interfaces, and key technologies, such as that of the transistor. Control of the interfaces between materials with the same crystal structures but different chemical compositions is possible in many materials classes, but less progress has been made for oxide materials with different crystal structures. We show that dynamical self-organization during growth can create a coherent interface between the perovskite and fluorite oxide structures, which are based on different structural motifs, if an appropriate choice of cations is made to enable this restructuring. The integration of calculation with experimental observation reveals that the interface differs from both the bulk components and identifies the chemical bonding requirements to connect distinct oxide structures.

  12. Recent Progress in Self‐Supported Metal Oxide Nanoarray Electrodes for Advanced Lithium‐Ion Batteries

    PubMed Central

    Zhang, Feng

    2016-01-01

    The rational design and fabrication of electrode materials with desirable architectures and optimized properties has been demonstrated to be an effective approach towards high‐performance lithium‐ion batteries (LIBs). Although nanostructured metal oxide electrodes with high specific capacity have been regarded as the most promising alternatives for replacing commercial electrodes in LIBs, their further developments are still faced with several challenges such as poor cycling stability and unsatisfying rate performance. As a new class of binder‐free electrodes for LIBs, self‐supported metal oxide nanoarray electrodes have many advantageous features in terms of high specific surface area, fast electron transport, improved charge transfer efficiency, and free space for alleviating volume expansion and preventing severe aggregation, holding great potential to solve the mentioned problems. This review highlights the recent progress in the utilization of self‐supported metal oxide nanoarrays grown on 2D planar and 3D porous substrates, such as 1D and 2D nanostructure arrays, hierarchical nanostructure arrays, and heterostructured nanoarrays, as anodes and cathodes for advanced LIBs. Furthermore, the potential applications of these binder‐free nanoarray electrodes for practical LIBs in full‐cell configuration are outlined. Finally, the future prospects of these self‐supported nanoarray electrodes are discussed. PMID:27711259

  13. Recent Progress in Self‐Supported Metal Oxide Nanoarray Electrodes for Advanced Lithium‐Ion Batteries

    PubMed Central

    Zhang, Feng

    2016-01-01

    The rational design and fabrication of electrode materials with desirable architectures and optimized properties has been demonstrated to be an effective approach towards high‐performance lithium‐ion batteries (LIBs). Although nanostructured metal oxide electrodes with high specific capacity have been regarded as the most promising alternatives for replacing commercial electrodes in LIBs, their further developments are still faced with several challenges such as poor cycling stability and unsatisfying rate performance. As a new class of binder‐free electrodes for LIBs, self‐supported metal oxide nanoarray electrodes have many advantageous features in terms of high specific surface area, fast electron transport, improved charge transfer efficiency, and free space for alleviating volume expansion and preventing severe aggregation, holding great potential to solve the mentioned problems. This review highlights the recent progress in the utilization of self‐supported metal oxide nanoarrays grown on 2D planar and 3D porous substrates, such as 1D and 2D nanostructure arrays, hierarchical nanostructure arrays, and heterostructured nanoarrays, as anodes and cathodes for advanced LIBs. Furthermore, the potential applications of these binder‐free nanoarray electrodes for practical LIBs in full‐cell configuration are outlined. Finally, the future prospects of these self‐supported nanoarray electrodes are discussed.

  14. Mesoscopically structured nanocrystalline metal oxide thin films

    NASA Astrophysics Data System (ADS)

    Carretero-Genevrier, Adrian; Drisko, Glenna L.; Grosso, David; Boissiere, Cédric; Sanchez, Clement

    2014-11-01

    This review describes the main successful strategies that are used to grow mesostructured nanocrystalline metal oxide and SiO2 films via deposition of sol-gel derived solutions. In addition to the typical physicochemical forces to be considered during crystallization, mesoporous thin films are also affected by the substrate-film relationship and the mesostructure. The substrate can influence the crystallization temperature and the obtained crystallographic orientation due to the interfacial energies and the lattice mismatch. The mesostructure can influence the crystallite orientation, and affects nucleation and growth behavior due to the wall thickness and pore curvature. Three main methods are presented and discussed: templated mesoporosity followed by thermally induced crystallization, mesostructuration of already crystallized metal oxide nanobuilding units and substrate-directed crystallization with an emphasis on very recent results concerning epitaxially grown piezoelectric structured α-quartz films via crystallization of amorphous structured SiO2 thin films.

  15. Metal oxide nanoparticles with low toxicity.

    PubMed

    Ng, Alan Man Ching; Guo, Mu Yao; Leung, Yu Hang; Chan, Charis M N; Wong, Stella W Y; Yung, Mana M N; Ma, Angel P Y; Djurišić, Aleksandra B; Leung, Frederick C C; Leung, Kenneth M Y; Chan, Wai Kin; Lee, Hung Kay

    2015-10-01

    A number of different nanomaterials produced and incorporated into various products are rising. However, their environmental hazards are frequently unknown. Here we consider three different metal oxide compounds (SnO2, In2O3, and Al2O3), which have not been extensively studied and are expected to have low toxicity. This study aimed to comprehensively characterize the physicochemical properties of these nanomaterials and investigate their toxicity on bacteria (Escherichia coli) under UV illumination and in the dark, as well as on a marine diatom (Skeletonema costatum) under ambient illumination/dark (16-8h) cycles. The material properties responsible for their low toxicity have been identified based on comprehensive experimental characterizations and comparison to a metal oxide exhibiting significant toxicity under illumination (anatase TiO2). The metal oxide materials investigated exhibited significant difference in surface properties and interaction with the living organisms. In order for a material to exhibit significant toxicity, it needs to be able to both form a stable suspension in the culture medium and to interact with the cell walls of the test organism. Our results indicated that the observed low toxicities of the three nanomaterials could be attributed to the limited interaction between the nanoparticles and cell walls of the test organisms. This could occur either due to the lack of significant attachment between nanoparticles and cell walls, or due to their tendency to aggregate in solution. PMID:26143160

  16. Fabrication of quantum dots in undoped Si/Si0.8Ge0.2 heterostructures using a single metal-gate layer

    DOE PAGESBeta

    Lu, T. M.; Gamble, J. K.; Muller, R. P.; Nielsen, E.; Bethke, D.; Ten Eyck, G. A.; Pluym, T.; Wendt, J. R.; Dominguez, J.; Lilly, M. P.; et al

    2016-08-29

    Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for their potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30%. Here, we report the fabrication and low-temperature characterization of quantum dots in the Si/Si0.8Ge0.2 heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 μm increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratio used heremore » leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. Furthermore, the device uses only a single metal-gate layer, greatly simplifying device design and fabrication.« less

  17. Fabrication of quantum dots in undoped Si/Si0.8Ge0.2 heterostructures using a single metal-gate layer

    NASA Astrophysics Data System (ADS)

    Lu, T. M.; Gamble, J. K.; Muller, R. P.; Nielsen, E.; Bethke, D.; Ten Eyck, G. A.; Pluym, T.; Wendt, J. R.; Dominguez, J.; Lilly, M. P.; Carroll, M. S.; Wanke, M. C.

    2016-08-01

    Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for their potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30%. Here, we report the fabrication and low-temperature characterization of quantum dots in the Si/Si0.8Ge0.2 heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 μm increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratio used here leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. The device uses only a single metal-gate layer, greatly simplifying device design and fabrication.

  18. Reduced-graphene-oxide-wrapped BiOI-AgI heterostructured nanocomposite as a high-performance photocatalyst for dye degradation under solar light irradiation

    NASA Astrophysics Data System (ADS)

    Islam, M. Jahurul; Reddy, D. Amaranatha; Ma, Rory; Kim, Yujin; Kim, Tae Kyu

    2016-11-01

    Solar photocatalytic water treatment has emerged as a promising way to provide clean water. However, most traditional photocatalysts (TiO2, ZnO, etc.) are active only under ultraviolet light and have high recombination rates of photoinduced electron-hole pairs; therefore, they are not sufficient to fulfill all of the demands of practical applications. This problem could be overcome by developing highly solar-light-active and durable heterostructured photocatalysts. In this study, a new solar-light-active heterostructured reduced graphene oxide (RGO)/BiOI/AgI photocatalyst was successfully fabricated through a simple precipitation method. The resultant heterostructured RGO/BiOI/AgI nanocomposite exhibited extraordinary photocatalytic performance in the degradation of rhodamine B (RhB) under simulated sunlight irradiation. The measured rate constant of the RGO/BiOI/AgI nanocomposite was six times higher than that of bare BiOI nanostructures. Its extraordinary capacity for harvesting full-spectrum light and long-term stability makes the RGO/BiOI/AgI nanocomposite a potential photocatalyst for environmental remediation.

  19. Method for producing metal oxide aerogels

    DOEpatents

    Tillotson, T.M.; Poco, J.F.; Hrubesh, L.W.; Thomas, I.M.

    1995-04-25

    A two-step hydrolysis-condensation method was developed to form metal oxide aerogels of any density, including densities of less than 0.003g/cm{sup 3} and greater than 0.27g/cm{sup 3}. High purity metal alkoxide is reacted with water, alcohol solvent, and an additive to form a partially condensed metal intermediate. All solvent and reaction-generated alcohol is removed, and the intermediate is diluted with a nonalcoholic solvent. The intermediate can be stored for future use to make aerogels of any density. The aerogels are formed by reacting the intermediate with water, nonalcoholic solvent, and a catalyst, and extracting the nonalcoholic solvent directly. The resulting monolithic aerogels are hydrophobic and stable under atmospheric conditions, and exhibit good optical transparency, high clarity, and homogeneity. The aerogels have high thermal insulation capacity, high porosity, mechanical strength and stability, and require shorter gelation times than aerogels formed by conventional methods. 8 figs.

  20. Method for producing metal oxide aerogels

    DOEpatents

    Tillotson, Thomas M.; Poco, John F.; Hrubesh, Lawrence W.; Thomas, Ian M.

    1995-01-01

    A two-step hydrolysis-condensation method was developed to form metal oxide aerogels of any density, including densities of less than 0.003g/cm.sup.3 and greater than 0.27g/cm.sup.3. High purity metal alkoxide is reacted with water, alcohol solvent, and an additive to form a partially condensed metal intermediate. All solvent and reaction-generated alcohol is removed, and the intermediate is diluted with a nonalcoholic solvent. The intermediate can be stored for future use to make aerogels of any density. The aerogels are formed by reacting the intermediate with water, nonalcoholic solvent, and a catalyst, and extracting the nonalcoholic solvent directly. The resulting monolithic aerogels are hydrophobic and stable under atmospheric conditions, and exhibit good optical transparency, high clarity, and homogeneity. The aerogels have high thermal insulation capacity, high porosity, mechanical strength and stability, and require shorter gelation times than aerogels formed by conventional methods.

  1. Removal of metallic iron on oxide slags

    SciTech Connect

    Shannon, G.N.; Fruehan, R.J.; Sridhar, S.

    2009-10-15

    It is possible, in some cases, for ground coal particles to react with gasifier gas during combustion, allowing the ash material in the coal to form phases besides the expected slag phase. One of these phases is metallic iron, because some gasifiers are designed to operate under a reducing atmosphere (pO{sub 2}) of approximately 10{sup -4} atm). Metallic iron can become entrained in the gas stream and deposit on, and foul, downstream equipment. To improve the understanding of the reaction between different metallic iron particles and gas, which eventually oxidizes them, and the slag that the resulting oxide dissolves in, the kinetics of iron reaction on slag were predicted using gas-phase mass-transfer limitations for the reaction and were compared with diffusion in the slag; the reaction itself was observed under confocal scanning laser microscopy. The expected rates for iron droplet removal are provided based on the size and effective partial pressure of oxygen, and it is found that decarburization occurs before iron reaction, leading to an extra 30- to 100-second delay for carbon-saturated particles vs pure iron particles. A pure metallic iron particle of 0.5 mg should be removed in about 220 seconds at 1400{sup o}C and in 160 seconds at 1600{sup o}C.

  2. Cabrera-Mott kinetics of oxidation of metal nanowires

    NASA Astrophysics Data System (ADS)

    Zhdanov, Vladimir P.; Kasemo, Bengt

    2012-06-01

    The Cabrera-Mott model, implying that oxidation of a metal is limited by the field-facilitated activated jumps of metal ions at the metal-oxide interface, was originally proposed to interpret growth of thin oxide films on planar metal surfaces. Recently, the model was used to describe oxidation of spherical nanoparticles with small radius of curvature. Here, we analyze oxidation of nanowires. The increase of the oxide thickness with increasing time for a nanowire is shown to be slower than that for a nanoparticle with the same radius, but faster than in the case of a planar surface.

  3. Impact dynamics of oxidized liquid metal drops

    NASA Astrophysics Data System (ADS)

    Xu, Qin; Brown, Eric; Jaeger, Heinrich M.

    2013-04-01

    With exposure to air, many liquid metals spontaneously generate an oxide layer on their surface. In oscillatory rheological tests, this skin is found to introduce a yield stress that typically dominates the elastic response but can be tuned by exposing the metal to hydrochloric acid solutions of different concentration. We systematically studied the normal impact of eutectic gallium-indium (eGaIn) drops under different oxidation conditions and show how this leads to two different dynamical regimes. At low impact velocity (or low Weber number), eGaIn droplets display strong recoil and rebound from the impacted surface when the oxide layer is removed. In addition, the degree of drop deformation or spreading during impact is controlled by the oxide skin. We show that the scaling law known from ordinary liquids for the maximum spreading radius as a function of impact velocity can still be applied to the case of oxidized eGaIn if an effective Weber number We is employed that uses an effective surface tension factoring in the yield stress. In contrast, no influence on spreading from different oxidations conditions is observed for high impact velocity. This suggests that the initial kinetic energy is mostly damped by bulk viscous dissipation. Results from both regimes can be collapsed in an impact phase diagram controlled by two variables, the maximum spreading factor Pm=R0/Rm, given by the ratio of initial to maximum drop radius, and the impact number K=We/Re4/5, which scales with the effective Weber number We as well as the Reynolds number Re. The data exhibit a transition from capillary to viscous behavior at a critical impact number Kc≈0.1.

  4. Research Update: Synthesis, properties, and applications of ultrathin metallic nanowires and associated heterostructures

    NASA Astrophysics Data System (ADS)

    Liu, Haiqing; Li, Luyao; Scofield, Megan E.; Wong, Stanislaus S.

    2015-08-01

    The properties of one-dimensional (1D) nanostructured materials can change considerably and unexpectedly, when their diameters attain the "ultrathin" level, i.e., below 10 nm. Herein, we have summarized recent developments associated with not only the synthesis but also more importantly, the applications of ultrathin 1D nanowires. Specifically, various classes of ultrathin metallic nanowires have been shown to be excellent, high-performing structural motifs for electrocatalysts, superconducting materials, electrical devices, and nano-sized pressure sensors. Moreover, the fabrication of ultrathin-based 0D-1D, 1D-1D, and 1D-2D composite hybrid structures may represent one of the most promising designs for novel architectures in energy storage and conversion, photovoltaic devices, photoconductivity, and photoelectrocatalysis.

  5. Dielectric response of metal/SrTiO{sub 3}/two-dimensional electron liquid heterostructures

    SciTech Connect

    Mikheev, Evgeny; Raghavan, Santosh; Stemmer, Susanne

    2015-08-17

    Maximizing the effective dielectric constant of the gate dielectric stack is important for electrostatically controlling high carrier densities inherent to strongly correlated materials. SrTiO{sub 3} is uniquely suited for this purpose, given its extremely high dielectric constant, which can reach 10{sup 4}. Here, we present a systematic study of the thickness dependence of the dielectric response and leakage of SrTiO{sub 3} that is incorporated into a vertical structure on a high-carrier-density two-dimensional electron liquid (2DEL). A simple model can be used to interpret the data. The results show a need for improved interface control in the design of metal/SrTiO{sub 3}/2DEL devices.

  6. Method for inhibiting oxidation of metal sulfide-containing material

    DOEpatents

    Elsetinow, Alicia; Borda, Michael J.; Schoonen, Martin A.; Strongin, Daniel R.

    2006-12-26

    The present invention provides means for inhibiting the oxidation of a metal sulfide-containing material, such as ore mine waste rock or metal sulfide taiulings, by coating the metal sulfide-containing material with an oxidation-inhibiting two-tail lipid coating (12) thereon, thereby inhibiting oxidation of the metal sulfide-containing material in acid mine drainage conditions. The lipids may be selected from phospholipids, sphingolipids, glycolipids and combinations thereof.

  7. Synthesis of heterostructured helical carbon nanotubes by iron-catalyzed ethanol decomposition.

    PubMed

    Yong, Zhang; Fang, Liu; Zhi-hua, Zhang

    2011-08-01

    Shaping of carbon nanotubes (CNTs) into desired morphologies have attracted much attention recently. High quality heterostructured helical carbon nanotubes (HCNTs) were synthesized from transitional metal oxide and ethanol by chemical vapor deposition (CVD) in this paper. High resolution transmission electron microscopy (HRTEM) results showed that, heterostructured "U" shape, "G" shape and "S" shape HCNTs were achieved. Iron oxide was reduced to α-Fe by ethanol, and catalyzed the growth of heterostructured HCNTs. Helical coiling of HCNTs was induced by the anisotropic facet catalytic activity of α-Fe catalyst for carbon deposition. Then, symmetrical growth of two HCNTs from one catalyst nanoparticle resulted in symmetrical "U" shape HCNTs, while successive connecting of several "arc" and "tail" HCNTs led to asymmetrical "G" and "S" morphologies HCNTs.

  8. Metallic and insulating oxide interfaces controlled by electronic correlations.

    PubMed

    Jang, H W; Felker, D A; Bark, C W; Wang, Y; Niranjan, M K; Nelson, C T; Zhang, Y; Su, D; Folkman, C M; Baek, S H; Lee, S; Janicka, K; Zhu, Y; Pan, X Q; Fong, D D; Tsymbal, E Y; Rzchowski, M S; Eom, C B

    2011-02-18

    The formation of two-dimensional electron gases (2DEGs) at complex oxide interfaces is directly influenced by the oxide electronic properties. We investigated how local electron correlations control the 2DEG by inserting a single atomic layer of a rare-earth oxide (RO) [(R is lanthanum (La), praseodymium (Pr), neodymium (Nd), samarium (Sm), or yttrium (Y)] into an epitaxial strontium titanate oxide (SrTiO(3)) matrix using pulsed-laser deposition with atomic layer control. We find that structures with La, Pr, and Nd ions result in conducting 2DEGs at the inserted layer, whereas the structures with Sm or Y ions are insulating. Our local spectroscopic and theoretical results indicate that the interfacial conductivity is dependent on electronic correlations that decay spatially into the SrTiO(3) matrix. Such correlation effects can lead to new functionalities in designed heterostructures. PMID:21330538

  9. Metallic and insulating oxide interfaces controlled by electronic correlations.

    SciTech Connect

    Jang, H. W.; Felker, D. A.; Bark, C. W.; Wang, Y.; Niranjan , M. K.; Nelson, C. T.; Zhang, Y.; Su, D.; Folkman, C. M.; Baek, S. H.; Lee, S.; Janicka, K.; Zhu, Y.; Pan, X. Q.; Fong, D. D.; Tsymbal, E. Y.; Rzchowski, M. S.; Eom, C. B.; Materials Science Division; Univ. of Wisconsin at Madison; Univ. of Nebraska at Lincoln; Univ. of Michigan; BNL

    2011-01-01

    The formation of two-dimensional electron gases (2DEGs) at complex oxide interfaces is directly influenced by the oxide electronic properties. We investigated how local electron correlations control the 2DEG by inserting a single atomic layer of a rare-earth oxide (RO) [R is lanthanum (La), praseodymium (Pr), neodymium (Nd), samarium (Sm), or yttrium (Y)] into an epitaxial strontium titanate oxide (SrTiO{sub 3}) matrix using pulsed-laser deposition with atomic layer control. We find that structures with La, Pr, and Nd ions result in conducting 2DEGs at the inserted layer, whereas the structures with Sm or Y ions are insulating. Our local spectroscopic and theoretical results indicate that the interfacial conductivity is dependent on electronic correlations that decay spatially into the SrTiO{sub 3} matrix. Such correlation effects can lead to new functionalities in designed heterostructures.

  10. Metallic and Insulating Oxide Interfaces Controlled by Electronic Correlations

    SciTech Connect

    Jang, H.W.; Su, D.; Jang, H.W.; Felker, D.A.; Bark, C.W.; Wang, Y.; Niranjan, M.K.; Nelson, C.T.; Zhang, Y.; Folkman, C.M.; Baek, S.H.; Lee, S.; Janicka, K.; Zhu, Y.; Pan, X.Q.; Fong,, D.D.; Tsymbal, E.Y.; Rzchowski, M.S.; Eom, C.B.

    2011-02-18

    The formation of two-dimensional electron gases (2DEGs) at complex oxide interfaces is directly influenced by the oxide electronic properties. We investigated how local electron correlations control the 2DEG by inserting a single atomic layer of a rare-earth oxide (RO) [RO is lanthanum (La), praseodymium (Pr), neodymium (Nd), samarium (Sm), or yttrium (Y)] into an epitaxial strontium titanate oxide (SrTiO{sub 3}) matrix using pulsed-laser deposition with atomic layer control. We find that structures with La, Pr, and Nd ions result in conducting 2DEGs at the inserted layer, whereas the structures with Sm or Y ions are insulating. Our local spectroscopic and theoretical results indicate that the interfacial conductivity is dependent on electronic correlations that decay spatially into the SrTiO{sub 3} matrix. Such correlation effects can lead to new functionalities in designed heterostructures.

  11. Graphene oxide-based flexible metal-insulator-metal capacitors

    NASA Astrophysics Data System (ADS)

    Bag, A.; Hota, M. K.; Mallik, S.; Maiti, C. K.

    2013-05-01

    This work explores the fabrication of graphene oxide (GO)-based metal-insulator-metal (MIM) capacitors on flexible polyethylene terephthalate (PET) substrates. Electrical properties are studied in detail. A high capacitance density of ˜4 fF µm-2 measured at 1 MHz and permittivity of ˜6 have been obtained. A low voltage coefficient of capacitance, VCC-α, and a low dielectric loss tangent indicate the potential of GO-based MIM capacitors for RF applications. The constant voltage stressing study has shown a high reliability against degradation up to a projected period of 10 years. Degradation in capacitance of the devices on flexible substrates has been studied by bending radius down to 1 cm even up to 6000 times of repeated bending.

  12. Suppression of octahedral tilts and associated changes in electronic properties at epitaxial oxide heterostructure interfaces.

    PubMed

    Borisevich, A Y; Chang, H J; Huijben, M; Oxley, M P; Okamoto, S; Niranjan, M K; Burton, J D; Tsymbal, E Y; Chu, Y H; Yu, P; Ramesh, R; Kalinin, S V; Pennycook, S J

    2010-08-20

    Epitaxial oxide interfaces with broken translational symmetry have emerged as a central paradigm behind the novel behaviors of oxide superlattices. Here, we use scanning transmission electron microscopy to demonstrate a direct, quantitative unit-cell-by-unit-cell mapping of lattice parameters and oxygen octahedral rotations across the BiFeO3-La0.7 Sr0.3 MnO3 interface to elucidate how the change of crystal symmetry is accommodated. Combined with low-loss electron energy loss spectroscopy imaging, we demonstrate a mesoscopic antiferrodistortive phase transition near the interface in BiFeO3 and elucidate associated changes in electronic properties in a thin layer directly adjacent to the interface. PMID:20868130

  13. Suppression of Octahedral Tilts and Associated Changes in Electronic Properties at Epitaxial Oxide Heterostructure Interfaces

    SciTech Connect

    Borisevich, Albina Y; Chang, Hye Jung; Huijben, Mark; Oxley, Mark P; Okamoto, Satoshi; Niranjan, M K; Burton, J D; Tsymbal, E Y; Chu, Ying-Hao; Yu, P; Ramesh, R.; Kalinin, Sergei V; Pennycook, Stephen J

    2010-01-01

    Epitaxial oxide interfaces with broken translational symmetry have emerged as a central paradigm behind the novel behaviors of oxide superlattices. Here, we use scanning transmission electron microscopy to demonstrate a direct, quantitative unit-cell-by-unit-cell mapping of lattice parameters and oxygen octahedral rotations across the BiFeO{sub 3{sup -}}La{sub 0.7}Sr{sub 0.3}MnO{sub 3} interface to elucidate how the change of crystal symmetry is accommodated. Combined with low-loss electron energy loss spectroscopy imaging, we demonstrate a mesoscopic antiferrodistortive phase transition near the interface in BiFeO{sub 3} and elucidate associated changes in electronic properties in a thin layer directly adjacent to the interface.

  14. The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy

    SciTech Connect

    Vogt, Patrick; Bierwagen, Oliver

    2015-02-23

    The hetero-epitaxial growth of the n-type semiconducting oxides β-Ga{sub 2}O{sub 3}, In{sub 2}O{sub 3}, and SnO{sub 2} on c- and r-plane sapphire was performed by plasma-assisted molecular beam epitaxy. The growth-rate and desorbing flux from the substrate were measured in-situ under various oxygen to metal ratios by laser reflectometry and quadrupole mass spectrometry, respectively. These measurements clarified the role of volatile sub-oxide formation (Ga{sub 2}O, In{sub 2}O, and SnO) during growth, the sub-oxide stoichiometry, and the efficiency of oxide formation for the three oxides. As a result, the formation of the sub-oxides decreased the growth-rate under metal-rich growth conditions and resulted in etching of the oxide film by supplying only metal flux. The flux ratio for the exclusive formation of the sub-oxide (e.g., the p-type semiconductor SnO) was determined, and the efficiency of oxide formation was found to be the highest for SnO{sub 2}, somewhat lower for In{sub 2}O{sub 3}, and the lowest for Ga{sub 2}O{sub 3}. Our findings can be generalized to further oxides that possess related sub-oxides.

  15. Thermally stable crystalline mesoporous metal oxides with substantially uniform pores

    SciTech Connect

    Wiesner, Ulrich; Orilall, Mahendra Christopher; Lee, Jinwoo; DiSalvo, Jr., Francis J

    2015-01-27

    Highly crystalline metal oxide-carbon composites, as precursors to thermally stable mesoporous metal oxides, are coated with a layer of amorphous carbon. Using a `one-pot` method, highly crystalline metal oxide-carbon composites are converted to thermally stable mesoporous metal oxides, having highly crystalline mesopore walls, without causing the concomitant collapse of the mesostructure. The `one-pot` method uses block copolymers with an sp or sp 2 hybridized carbon containing hydrophobic block as structure directing agents which converts to a sturdy, amorphous carbon material under appropriate heating conditions, providing an in-situ rigid support which maintains the pores of the oxides intact while crystallizing at temperatures as high as 1000 deg C. A highly crystalline metal oxide-carbon composite can be heated to produce a thermally stable mesoporous metal oxide consisting of a single polymorph.

  16. First Principles Modeling of Metal/Ceramic Multilayer Nano-heterostructures.

    SciTech Connect

    Yadav, Satyesh K.; Wang, Jian; Misra, Amit; Liu, Xiang-Yang; Ramprasad, Ramamurthy

    2012-07-31

    Nanoscaled multilayer films composed of metals and ceramics have been explored for their potential applications as ductile, yet strong, materials. It is believed that at the nanoscale, the interfaces between the two materials constituting the multilayer assume an increasingly important role in determining the properties, as they comprise a more significant volume fraction of the multilayer with decreasing layer thickness. In this ab initio work, density functional theory was used to calculate the ideal shear strengths of pure Al, pure TiN, the Al/TiN interfacial region, and Al/TiN multilayers. The ideal shear strength of the Al/TiN interface was found to vary from very low (on the order of the ideal shear strength of Al) to very high (on the order of the ideal shear strength of TiN), depending on whether the TiN at the interface was Ti- or N-terminated, respectively. The results suggest that the shear properties of Al/TiN depend strongly on the chemistry of the interface, Al:N versus Al:Ti terminations. Nevertheless, for the Al/TiN multilayers, the ideal shear strength was limited by shear in the Al layer away from the interface, even when the individual layer thickness is less than a nanometer. Further we found an unusual structural rotation of bulk single-crystal Al under uniaxial compressive strains. It was found that under strains either along the <11-2> or the <111> directions, beyond a critical stress of about 13 GPa, the Al crystal can rotate through shear in the Shockley partial direction (i.e.,<11-2>) on the {l_brace}111{r_brace} plane, in an attempt to relieve internal stresses. This phenomenon reveals a possible mechanism leading to the onset of homogeneous dislocation nucleation in Al under high uniaxial compressions.

  17. Process for Producing Metal Compounds From Graphite Oxide

    NASA Technical Reports Server (NTRS)

    Hung, Ching-Cheh (Inventor)

    2000-01-01

    A process for providing elemental metals or metal oxides distributed on a carbon substrate or self-supported utilizing graphite oxide as a precursor. The graphite oxide is exposed to one or more metal chlorides to form an intermediary product comprising carbon, metal, chloride, and oxygen. This intermediary product can be fiber processed by direct exposure to carbonate solutions to form a second intermediary product comprising carbon. metal carbonate. and oxygen. Either intermediary product may be further processed: a) in air to produce metal oxide b) in an inert environment to produce metal oxide on carbon substrate; c) in a reducing environment to produce elemental metal distributed on carbon substrate. The product generally takes the shape of the carbon precursor.

  18. Process for producing metal compounds from graphite oxide

    NASA Technical Reports Server (NTRS)

    Hung, Ching-Cheh (Inventor)

    2000-01-01

    A process for providing elemental metals or metal oxides distributed on a carbon substrate or self-supported utilizing graphite oxide as a precursor. The graphite oxide is exposed to one or more metal chlorides to form an intermediary product comprising carbon, metal, chloride, and oxygen This intermediary product can be flier processed by direct exposure to carbonate solutions to form a second intermediary product comprising carbon, metal carbonate, and oxygen. Either intermediary product may be further processed: a) in air to produce metal oxide; b) in an inert environment to produce metal oxide on carbon substrate; c) in a reducing environment to produce elemental metal distributed on carbon substrate. The product generally takes the shape of the carbon precursor.

  19. Process for Producing Metal Compounds from Graphite Oxide

    NASA Technical Reports Server (NTRS)

    Hung, Ching-Cheh (Inventor)

    2000-01-01

    A process for providing elemental metals or metal oxides distributed on a carbon substrate or self-supported utilizing graphite oxide as a precursor. The graphite oxide is exposed to one or more metal chlorides to form an intermediary product comprising carbon. metal. chloride. and oxygen This intermediary product can be flier processed by direct exposure to carbonate solutions to form a second intermediary product comprising carbon. metal carbonate. and oxygen. Either intermediary product may be further processed: a) in air to produce metal oxide: b) in an inert environment to produce metal oxide on carbon substrate: c) in a reducing environment. to produce elemental metal distributed on carbon substrate. The product generally takes the shape of the carbon precursor.

  20. Correlating Interfacial Structure and Magnetism in Thin-Film Oxide Heterostructures Using Transmission Electron Microscopy and Polarized Neutron Reflectometry

    NASA Astrophysics Data System (ADS)

    Spurgeon, Steven Richard

    Oxide thin-films have attracted considerable attention for a new generation of spintronics devices, where both electron charge and spin are used to transport information. However, a poor understanding of the local features that mediate magnetization and coupling in these materials has greatly limited their deployment into new information and communication technologies. This thesis describes direct, local measurements of structure-property relationships in ferrous thin-films and La1--xSrxMnO3 (LSMO) / Pb(ZrxTi1--x)O3 (PZT) thin-film heterostructures using spatially-resolved characterization techniques. In the first part of this thesis we explore the properties of ferrous spintronic thin-films. These films serve as a model system to establish a suite of interfacial characterization techniques for subsequent studies. We then study the static behavior of LSMO / PZT devices with polarization set by the underlying substrate. Using transmission electron microscopy and geometric phase analysis we reveal the presence of significant local strain gradients in these films for the first time. Electron energy loss spectroscopy mapping of the LSMO / PZT interface reveals Mn valence changes induced by charge-transfer screening. Bulk magnetometry and polarized neutron reflectometry indicate that these chemical and strain changes are associated with a graded magnetization across the LSMO layer. Density functional theory calculations are presented, which show that strain and charge-transfer screening act locally to suppress magnetization in the LSMO by changing the Mn orbital polarization. In the second half of this thesis, we explore asymmetric screening effects on magnetization LSMO / PZT composites. We find that the local ferroelectric polarization can vary widely and that this may be responsible for reduced charge-transfer effects, as well as magnetic phase gradients at interfaces. From this information and electron energy loss spectroscopy, we construct a map of the magnetic

  1. Polymer-assisted aqueous deposition of metal oxide films

    DOEpatents

    Li, DeQuan; Jia, Quanxi

    2003-07-08

    An organic solvent-free process for deposition of metal oxide thin films is presented. The process includes aqueous solutions of necessary metal precursors and an aqueous solution of a water-soluble polymer. After a coating operation, the resultant coating is fired at high temperatures to yield optical quality metal oxide thin films.

  2. The Effect of Metal Oxide on Nanoparticles from Thermite Reactions

    ERIC Educational Resources Information Center

    Moore, Lewis Ryan

    2006-01-01

    The purpose of this research was to determine how metal oxide used in a thermite reaction can impact the production of nanoparticles. The results showed the presence of nanoparticles (less than 1 micron in diameter) of at least one type produced by each metal oxide. The typical particles were metallic spheres, which ranged from 300 nanometers in…

  3. Synthesis and electronic applications of oxide-metal eutectic composites

    SciTech Connect

    Holder, J. D.; Cochran, J. K.; Hill, D. N.; Chapman, A. T.; Clark, G. W.

    1980-01-01

    A review is given of important developments in the synthesis of oxide-metal eutectic composites and the composite application in the continuing development of field emitters. Known metal oxide-metal binary and ternary eutectic systems are listed. The synthesis, electrical conductivity, thermodynamics, and applications are discussed. (FS)

  4. Metallic oxide switches using thick film technology

    NASA Technical Reports Server (NTRS)

    Patel, D. N.; Williams, L., Jr.

    1974-01-01

    Metallic oxide thick film switches were processed on alumina substrates using thick film technology. Vanadium pentoxide in powder form was mixed with other oxides e.g., barium, strontium copper and glass frit, ground to a fine powder. Pastes and screen printable inks were made using commercial conductive vehicles and appropriate thinners. Some switching devices were processed by conventional screen printing and firing of the inks and commercial cermet conductor terminals on 96% alumina substrates while others were made by applying small beads or dots of the pastes between platinum wires. Static, and dynamic volt-ampere, and pulse tests indicate that the switching and self-oscillatory characteristics of these devices could make them useful in memory element, oscillator, and automatic control applications.

  5. Chemical Sensors Based on Metal Oxide Nanostructures

    NASA Technical Reports Server (NTRS)

    Hunter, Gary W.; Xu, Jennifer C.; Evans, Laura J.; VanderWal, Randy L.; Berger, Gordon M.; Kulis, Mike J.; Liu, Chung-Chiun

    2006-01-01

    This paper is an overview of sensor development based on metal oxide nanostructures. While nanostructures such as nanorods show significan t potential as enabling materials for chemical sensors, a number of s ignificant technical challenges remain. The major issues addressed in this work revolve around the ability to make workable sensors. This paper discusses efforts to address three technical barriers related t o the application of nanostructures into sensor systems: 1) Improving contact of the nanostructured materials with electrodes in a microse nsor structure; 2) Controling nanostructure crystallinity to allow co ntrol of the detection mechanism; and 3) Widening the range of gases that can be detected by using different nanostructured materials. It is concluded that while this work demonstrates useful tools for furt her development, these are just the beginning steps towards realizati on of repeatable, controlled sensor systems using oxide based nanostr uctures.

  6. Preferential orientation of metal oxide superconducting materials

    DOEpatents

    Capone, Donald W.; Poeppel, Roger B.

    1991-01-01

    A polycrystalline metal oxide such as YBa.sub.2 Cu.sub.3 O.sub.7-X (where 0

  7. Surfactant-Templated Mesoporous Metal Oxide Nanowires

    DOE PAGESBeta

    Luo, Hongmei; Lin, Qianglu; Baber, Stacy; Naalla, Mahesh

    2010-01-01

    We demore » monstrate two approaches to prepare mesoporous metal oxide nanowires by surfactant assembly and nanoconfinement via sol-gel or electrochemical deposition. For example, mesoporous Ta 2 O 5 and zeolite nanowires are prepared by block copolymer Pluronic 123-templated sol-gel method, and mesoporous ZnO nanowires are prepared by electrodeposition in presence of anionic surfactant sodium dodecyl sulfate (SDS) surfactant, in porous membranes. The morphologies of porous nanowires are studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analyses.« less

  8. Metal Oxide CICC for Radiation Resistant Magnets

    NASA Astrophysics Data System (ADS)

    Zeller, A. F.; DeKamp, J. C.; DeLauter, J.; Ghosh, A.

    2006-03-01

    The proposed Rare Isotope Accelerator and other high beam current machines have requirements that superconducting magnets operate in a high radiation environment. One solution to both the continuous heat deposition and susceptibility of the insulation to radiation damage are solved with a radiation resistant CICC. Several metal oxide insulated CICC designs have been fabricated and tested. Engineering current densities of 55 A/mm2 at 7 T and 80 A/mm2 at 2 T have been achieved using Nb3Sn. Different insulation systems and conduit material allow many choices in coil design.

  9. Metal oxide membranes for gas separation

    DOEpatents

    Anderson, M.A.; Webster, E.T.; Xu, Q.

    1994-08-30

    A method for formation of a microporous ceramic membrane onto a porous support includes placing a colloidal suspension of metal oxide particles on one side of the porous support and exposing the other side of the porous support to a drying stream of gas or a reactive gas stream so that the particles are deposited on the drying side of the support as a gel. The gel so deposited can be sintered to form a supported ceramic membrane having mean pore sizes less than 30 Angstroms and useful for ultrafiltration, reverse osmosis, or gas separation. 4 figs.

  10. Metal oxide membranes for gas separation

    DOEpatents

    Anderson, Marc A.; Webster, Elizabeth T.; Xu, Qunyin

    1994-01-01

    A method for permformation of a microporous ceramic membrane onto a porous support includes placing a colloidal suspension of metal oxide particles on one side of the porous support and exposing the other side of the porous support to a drying stream of gas or a reactive gas stream so that the particles are deposited on the drying side of the support as a gel. The gel so deposited can be sintered to form a supported ceramic membrane having mean pore sizes less than 30 Angstroms and useful for ultrafiltration, reverse osmosis, or gas separation.

  11. Defect Engineering in Plasmonic Metal Oxide Nanocrystals.

    PubMed

    Runnerstrom, Evan L; Bergerud, Amy; Agrawal, Ankit; Johns, Robert W; Dahlman, Clayton J; Singh, Ajay; Selbach, Sverre M; Milliron, Delia J

    2016-05-11

    Defects may tend to make crystals interesting but they do not always improve performance. In doped metal oxide nanocrystals with localized surface plasmon resonance (LSPR), aliovalent dopants and oxygen vacancies act as centers for ionized impurity scattering of electrons. Such electronic damping leads to lossy, broadband LSPR with low quality factors, limiting applications that require near-field concentration of light. However, the appropriate dopant can mitigate ionized impurity scattering. Herein, we report the synthesis and characterization of a novel doped metal oxide nanocrystal material, cerium-doped indium oxide (Ce:In2O3). Ce:In2O3 nanocrystals display tunable mid-infrared LSPR with exceptionally narrow line widths and the highest quality factors observed for nanocrystals in this spectral region. Drude model fits to the spectra indicate that a drastic reduction in ionized impurity scattering is responsible for the enhanced quality factors, and high electronic mobilities reaching 33 cm(2)V(-1) s(-1) are measured optically, well above the optical mobility for tin-doped indium oxide (ITO) nanocrystals. We investigate the microscopic mechanisms underlying this enhanced mobility with density functional theory calculations, which suggest that scattering is reduced because cerium orbitals do not hybridize with the In orbitals that dominate the bottom of the conduction band. Ce doping may also reduce the equilibrium oxygen vacancy concentration, further enhancing mobility. From the absorption spectra of single Ce:In2O3 nanocrystals, we determine the dielectric function and by simulation predict strong near-field enhancement of mid-IR light, especially around the vertices of our synthesized nanocubes.

  12. Defect Engineering in Plasmonic Metal Oxide Nanocrystals.

    PubMed

    Runnerstrom, Evan L; Bergerud, Amy; Agrawal, Ankit; Johns, Robert W; Dahlman, Clayton J; Singh, Ajay; Selbach, Sverre M; Milliron, Delia J

    2016-05-11

    Defects may tend to make crystals interesting but they do not always improve performance. In doped metal oxide nanocrystals with localized surface plasmon resonance (LSPR), aliovalent dopants and oxygen vacancies act as centers for ionized impurity scattering of electrons. Such electronic damping leads to lossy, broadband LSPR with low quality factors, limiting applications that require near-field concentration of light. However, the appropriate dopant can mitigate ionized impurity scattering. Herein, we report the synthesis and characterization of a novel doped metal oxide nanocrystal material, cerium-doped indium oxide (Ce:In2O3). Ce:In2O3 nanocrystals display tunable mid-infrared LSPR with exceptionally narrow line widths and the highest quality factors observed for nanocrystals in this spectral region. Drude model fits to the spectra indicate that a drastic reduction in ionized impurity scattering is responsible for the enhanced quality factors, and high electronic mobilities reaching 33 cm(2)V(-1) s(-1) are measured optically, well above the optical mobility for tin-doped indium oxide (ITO) nanocrystals. We investigate the microscopic mechanisms underlying this enhanced mobility with density functional theory calculations, which suggest that scattering is reduced because cerium orbitals do not hybridize with the In orbitals that dominate the bottom of the conduction band. Ce doping may also reduce the equilibrium oxygen vacancy concentration, further enhancing mobility. From the absorption spectra of single Ce:In2O3 nanocrystals, we determine the dielectric function and by simulation predict strong near-field enhancement of mid-IR light, especially around the vertices of our synthesized nanocubes. PMID:27111427

  13. Metal-organic framework derived hollow polyhedron metal oxide posited graphene oxide for energy storage applications.

    PubMed

    Ramaraju, Bendi; Li, Cheng-Hung; Prakash, Sengodu; Chen, Chia-Chun

    2016-01-18

    A composite made from hollow polyhedron copper oxide and graphene oxide was synthesized by sintering a Cu-based metal-organic framework (Cu-MOF) embedded with exfoliated graphene oxide. As a proof-of-concept application, the obtained Cu(ox)-rGO materials were used in a lithium-ion battery and a sodium-ion battery as anode materials. Overall, the Cu(ox)-rGO composite delivers excellent electrochemical properties with stable cycling when compared to pure CuO-rGO and Cu-MOF.

  14. Method of making controlled morphology metal-oxides

    DOEpatents

    Ozcan, Soydan; Lu, Yuan

    2016-05-17

    A method of making metal oxides having a preselected morphology includes preparing a suspension that includes a solvent, polymeric nanostructures having multiplicities of hydroxyl surface groups and/or carboxyl surface groups, and a metal oxide precursor. The suspension has a preselected ratio of the polymeric nanostructures to the metal oxide precursor of at least 1:3, the preselected ratio corresponding to a preselected morphology. Subsequent steps include depositing the suspension onto a substrate, removing the solvent to form a film, removing the film from the substrate, and annealing the film to volatilize the polymeric nanostructures and convert the metal oxide precursor to metal oxide nanoparticles having the preselected morphology or to a metal oxide nanosheet including conjoined nanoparticles having the preselected morphology.

  15. Structural and photoluminescence studies on catalytic growth of silicon/zinc oxide heterostructure nanowires

    PubMed Central

    2013-01-01

    Silicon/zinc oxide (Si/ZnO) core-shell nanowires (NWs) were prepared on a p-type Si(111) substrate using a two-step growth process. First, indium seed-coated Si NWs (In/Si NWs) were synthesized using a plasma-assisted hot-wire chemical vapor deposition technique. This was then followed by the growth of a ZnO nanostructure shell layer using a vapor transport and condensation method. By varying the ZnO growth time from 0.5 to 2 h, different morphologies of ZnO nanostructures, such as ZnO nanoparticles, ZnO shell layer, and ZnO nanorods were grown on the In/Si NWs. The In seeds were believed to act as centers to attract the ZnO molecule vapors, further inducing the lateral growth of ZnO nanorods from the Si/ZnO core-shell NWs via a vapor-liquid-solid mechanism. The ZnO nanorods had a tendency to grow in the direction of [0001] as indicated by X-ray diffraction and high resolution transmission electron microscopy analyses. We showed that the Si/ZnO core-shell NWs exhibit a broad visible emission ranging from 400 to 750 nm due to the combination of emissions from oxygen vacancies in ZnO and In2O3 structures and nanocrystallite Si on the Si NWs. The hierarchical growth of straight ZnO nanorods on the core-shell NWs eventually reduced the defect (green) emission and enhanced the near band edge (ultraviolet) emission of the ZnO. PMID:23590803

  16. Fluidized reduction of oxides on fine metal powders without sintering

    NASA Technical Reports Server (NTRS)

    Hayashi, T.

    1985-01-01

    In the process of reducing extremely fine metal particles (av. particle size or = 1000 angstroms) covered with an oxide layer, the metal particles are fluidized by a gas flow contg. H, heated, and reduced. The method uniformly and easily reduces surface oxide layers of the extremely fine metal particles without causing sintering. The metal particles are useful for magnetic recording materials, conductive paste, powder metallurgy materials, chem. reagents, and catalysts.

  17. Conductance bistability in metal oxide junctions

    NASA Astrophysics Data System (ADS)

    Tan, Zhongkui; Patel, Vijay; Monge, Esteban; Chang, Shih-Sheng; Pottorf, Shawn; Lukens, James; Likharev, Konstantin

    2009-03-01

    We are exploring conductance bistability (memory) effects in junctions based on metal oxides, in the context of their possible applications in hybrid CMOS/nanoelectronic (e.g., CMOL [1]) circuits. So far, we have investigated CuOx, NbOx and TiOx formed by thermal and plasma oxidation, with or without rapid thermal post-annealing (at 200 to 800^oC for 30 to 300 seconds). Conductance switching effects have been observed for all these materials. Particularly high endurance (over 1000 switching cycles) has been obtained for TiOx junctions plasma oxidized in 15mTorr oxygen and then post-annealed at 700^oC. However, the ON/OFF conductance ratio for these junctions is only about 5, and the sample-to-sample reproducibility is much lower than required for integrated circuit applications. Our plans are to extend our studies to a-Si junctions with one Ag electrode, and multilayer TiOx junctions, with the main goal to improve device reproducibility. The work is supported in part by AFOSR. [3pt] [1] K. K. Likharev, ``Hybrid CMOS/Nanoelectronic Circuits,'' accepted for publication in J. Nanoelectronics and Optoelectronics, Nov. 2008.

  18. Synthesis and Characterization of Mixed Metal Oxide Nanocomposite Energetic Materials

    SciTech Connect

    Gash, A; Pantoya, M; Jr., J S; Zhao, L; Shea, K; Simpson, R; Clapsaddle, B

    2003-11-18

    In the field of composite energetic materials, properties such as ingredient distribution, particle size, and morphology, affect both sensitivity and performance. Since the reaction kinetics of composite energetic materials are typically controlled by the mass transport rates between reactants, one would anticipate new and potentially exceptional performance from energetic nanocomposites. We have developed a new method of making nanostructured energetic materials, specifically explosives, propellants, and pyrotechnics, using sol-gel chemistry. A novel sol-gel approach has proven successful in preparing metal oxide/silicon oxide nanocomposites in which the metal oxide is the major component. Two of the metal oxides are tungsten trioxide and iron(III) oxide, both of which are of interest in the field of energetic materials. Furthermore, due to the large availability of organically functionalized silanes, the silicon oxide phase can be used as a unique way of introducing organic additives into the bulk metal oxide materials. As a result, the desired organic functionality is well dispersed throughout the composite material on the nanoscale. By introducing a fuel metal into the metal oxide/silicon oxide matrix, energetic materials based on thermite reactions can be fabricated. The resulting nanoscale distribution of all the ingredients displays energetic properties not seen in its microscale counterparts due to the expected increase of mass transport rates between the reactants. The synthesis and characterization of these metal oxide/silicon oxide nanocomposites and their performance as energetic materials will be discussed.

  19. Defect Chemistry and Plasmon Physics of Colloidal Metal Oxide Nanocrystals

    SciTech Connect

    Lounis, SD; Runnerstrorm, EL; Llordes, A; Milliron, DJ

    2014-05-01

    Plasmonic nanocrystals of highly doped metal oxides have seen rapid development in the past decade and represent a class of materials with unique optoelectronic properties. In this Perspective, we discuss doping mechanisms in metal oxides and the accompanying physics of free carrier scattering, both of which have implications in determining the properties of localized surface plasmon resonances (LSPRs) in these nanocrystals. The balance between activation and compensation of dopants limits the free carrier concentration of the most common metal oxides, placing a ceiling on the LSPR frequency. Furthermore, because of ionized impurity scattering of the oscillating plasma by dopant ions, scattering must be treated in a fundamentally different way in semiconductor metal oxide materials when compared with conventional metals. Though these effects are well-understood in bulk metal oxides, further study is needed to understand their manifestation in nanocrystals and corresponding impact on plasmonic properties, and to develop materials that surpass current limitations in free carrier concentration.

  20. Prediction of electron energies in metal oxides.

    PubMed

    Walsh, Aron; Butler, Keith T

    2014-02-18

    The ability to predict energy levels in metal oxides is paramount to developinguseful materials, such as in the development of water photolysis catalysts and efficient photovoltaic cells. The binding energy of electrons in materials encompasses a wealth of information concerning their physicochemistry. The energies control the optical and electrical properties, dictating for which kinds of chemistry and physics a particular material is useful. Scientists have developed theories and models for electron energies in a variety of chemical systems over the past century. However, the prediction of quantitative energy levels in new materials remains a major challenge. This issue is of particular importance in metal oxide research, where novel chemistries have opened the possibility of a wide range of tailored systems with applications in important fields including light-emitting diodes, energy efficient glasses, and solar cells. In this Account, we discuss the application of atomistic modeling techniques, covering the spectrum from classical to quantum descriptions, to explore the alignment of electron energies between materials. We present a number of paradigmatic examples, including a series of oxides (ZnO, In2O3, and Cu2O). Such calculations allow the determination of a "band alignment diagram" between different materials and can facilitate the prediction of the optimal chemical composition of an oxide for use in a given application. Throughout this Account, we consider direct computational solutions in the context of heuristic models, which are used to relate the fundamental theory to experimental observations. We review a number of techniques that have been commonly applied in the study of electron energies in solids. These models have arisen from different answers to the same basic question, coming from solid-state chemistry and physics perspectives. We highlight common factors, as well as providing a critical appraisal of the strengths and weaknesses of each

  1. Pure electronic metal-insulator transition at the interface of complex oxides

    DOE PAGESBeta

    Meyers, D.; Liu, Jian; Freeland, J. W.; Middey, S.; Kareev, M.; Kwon, Jihwan; Zuo, J. M.; Chuang, Yi-De; Kim, J. W.; Ryan, P. J.; et al

    2016-06-21

    We observed complex materials in electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. We demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. Furthermore, these findings illustrate the utility of heterointerfaces as amore » powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.« less

  2. Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors.

    PubMed

    Zou, Xuming; Huang, Chun-Wei; Wang, Lifeng; Yin, Long-Jing; Li, Wenqing; Wang, Jingli; Wu, Bin; Liu, Yunqi; Yao, Qian; Jiang, Changzhong; Wu, Wen-Wei; He, Lin; Chen, Shanshan; Ho, Johnny C; Liao, Lei

    2016-03-01

    A unique design of a hexagonal boron nitride (h-BN)/HfO2 dielectric heterostructure stack is demonstrated, with few-layer h-BN to alleviate the surface optical phonon scattering, followed by high-κ HfO2 deposition to suppress Coulombic impurity scattering so that high-performance top-gated two-dimensional semiconductor transistors are achieved. Furthermore, this dielectric stack can also be extended to GaN-based transistors to enhance their performance.

  3. Trace Metal Sequestration by the Manganese Oxidizing Bacterium Pseudomonas putida

    NASA Astrophysics Data System (ADS)

    Toner, B.; Manceau, A.; Marcus, M. A.; Sposito, G.

    2002-12-01

    Bacterial cells are an important source of chemically reactive surfaces in freshwater and soil environments. Pseudomonas putida strain MnB1 cells, like many gram negative bacteria, present an outer membrane studded with phosphate groups and carbohydrates as well as a billowing biofilm of extracellular polysaccharides to the surrounding microenvironment. The cell outer membrane and the biofilm possess functional groups that complex trace metals. During certain growth phases P. putida is also a manganese oxidizing bacterium, causing the cells to coat themselves in Mn(IV) oxide. Therefore, in addition to the cell outer membrane and associated biofilm, trace metals may sorb to the biogenic Mn oxide. To explore the relative contributions to trace metal sorption by the bacterial cells and biogenic Mn oxide, zinc and nickel were added to suspensions of bacterial cells with three different conditions: cells in the absence of Mn, cells in the process of Mn oxidation and cells with preformed biogenic Mn oxide. Adsorption isotherms were measured to quantify Zn and Ni sorption to P. putida in the presence and absence of biogenic Mn oxide. Zinc and Ni K-edge EXAFS spectra were measured to determine how and where the metals were binding to the bacterial cells and biogenic Mn oxide. The Zn and Ni adsorption isotherms exhibited two plateaus. The metal complexation was dependent on concentration with Zn having a higher affinity for phosphate and Ni for carboxyl functional groups. The preformed biogenic Mn oxide has high affinity for Zn and Ni and the bacterial surface contributed little to metal removal from solution under these conditions. However, if the metal is present in solution while Mn oxidation is occurring the bacterial cell surface influences greatly the overall removal of metal. Manganese oxidizing bacteria such as P. putida contribute to environmental metal sequestration by catalyzing the production of Mn oxide minerals, and the bacterial cells are themselves reactive

  4. Influence of metal oxides on the adsorption characteristics of PPy/metal oxides for Methylene Blue.

    PubMed

    Chen, Jie; Feng, Jiangtao; Yan, Wei

    2016-08-01

    In this paper, the pure PPy and PPy/metal oxide composites including PPy/SiO2, PPy/Al2O3, and PPy/Fe3O4 as well as PPy coated commercial SiO2 and Al2O3 (PPy/SiO2(C) and PPy/Al2O3(C)) were successfully synthetized via chemical oxidative polymerization in acid aqueous medium to investigate the influence of metal oxides on adsorption capacity and their adsorption characteristics for Methylene Blue (MB). The composites were characterized by Zeta potential analysis, BET analysis, X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), thermogravimetric analysis (TGA) and scanning electron microscope (SEM). The results indicate that the metal oxides have great impact on textural properties, morphology, Zeta potential and PPy polymerization on their surface, further influence the adsorption capacity of their composites. The PPy/Al2O3(C) composite owns the highest specific surface area, rougher surface and most PPy content, and show the highest monolayer adsorption capacity reaching 134.77mg/g. In the adsorption characteristic studies, isotherm investigation shows an affinity order of PPy/metal oxides of PPy/Al2O3(C)>PPy/Al2O3>PPy/SiO2(C)>PPy/SiO2>PPy/Fe3O4>PPy, stating the affinity between PPy and MB was greatly improved by metal oxide, and Al2O3 owns high affinity for MB, followed by SiO2 and Fe3O4. Kinetic data of the composites selected (PPy/SiO2(C), PPy/Al2O3(C) and PPy/Fe3O4) were described more appropriately by the pseudo-second-order model, and the order of K2 is PPy/Al2O3>PPy/SiO2>PPy/Fe3O4, further showing a fast adsorption and good affinity of PPy/Al2O3(C) for MB. The regeneration method by HCl-elution and NaOH-activation was available, and the composites selected still owned good adsorption and desorption efficiency after six adsorption-desorption cycles.

  5. Influence of metal oxides on the adsorption characteristics of PPy/metal oxides for Methylene Blue.

    PubMed

    Chen, Jie; Feng, Jiangtao; Yan, Wei

    2016-08-01

    In this paper, the pure PPy and PPy/metal oxide composites including PPy/SiO2, PPy/Al2O3, and PPy/Fe3O4 as well as PPy coated commercial SiO2 and Al2O3 (PPy/SiO2(C) and PPy/Al2O3(C)) were successfully synthetized via chemical oxidative polymerization in acid aqueous medium to investigate the influence of metal oxides on adsorption capacity and their adsorption characteristics for Methylene Blue (MB). The composites were characterized by Zeta potential analysis, BET analysis, X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), thermogravimetric analysis (TGA) and scanning electron microscope (SEM). The results indicate that the metal oxides have great impact on textural properties, morphology, Zeta potential and PPy polymerization on their surface, further influence the adsorption capacity of their composites. The PPy/Al2O3(C) composite owns the highest specific surface area, rougher surface and most PPy content, and show the highest monolayer adsorption capacity reaching 134.77mg/g. In the adsorption characteristic studies, isotherm investigation shows an affinity order of PPy/metal oxides of PPy/Al2O3(C)>PPy/Al2O3>PPy/SiO2(C)>PPy/SiO2>PPy/Fe3O4>PPy, stating the affinity between PPy and MB was greatly improved by metal oxide, and Al2O3 owns high affinity for MB, followed by SiO2 and Fe3O4. Kinetic data of the composites selected (PPy/SiO2(C), PPy/Al2O3(C) and PPy/Fe3O4) were described more appropriately by the pseudo-second-order model, and the order of K2 is PPy/Al2O3>PPy/SiO2>PPy/Fe3O4, further showing a fast adsorption and good affinity of PPy/Al2O3(C) for MB. The regeneration method by HCl-elution and NaOH-activation was available, and the composites selected still owned good adsorption and desorption efficiency after six adsorption-desorption cycles. PMID:27149689

  6. Stabilization of electrocatalytic metal nanoparticles at metal-metal oxide-graphene triple junction points.

    PubMed

    Kou, Rong; Shao, Yuyan; Mei, Donghai; Nie, Zimin; Wang, Donghai; Wang, Chongmin; Viswanathan, Vilayanur V; Park, Sehkyu; Aksay, Ilhan A; Lin, Yuehe; Wang, Yong; Liu, Jun

    2011-03-01

    Carbon-supported precious metal catalysts are widely used in heterogeneous catalysis and electrocatalysis, and enhancement of catalyst dispersion and stability by controlling the interfacial structure is highly desired. Here we report a new method to deposit metal oxides and metal nanoparticles on graphene and form stable metal-metal oxide-graphene triple junctions for electrocatalysis applications. We first synthesize indium tin oxide (ITO) nanocrystals directly on functionalized graphene sheets, forming an ITO-graphene hybrid. Platinum nanoparticles are then deposited, forming a unique triple-junction structure (Pt-ITO-graphene). Our experimental work and periodic density functional theory (DFT) calculations show that the supported Pt nanoparticles are more stable at the Pt-ITO-graphene triple junctions. Furthermore, DFT calculations suggest that the defects and functional groups on graphene also play an important role in stabilizing the catalysts. These new catalyst materials were tested for oxygen reduction for potential applications in polymer electrolyte membrane fuel cells, and they exhibited greatly enhanced stability and activity.

  7. Stabilization of electrocatalytic metal nanoparticles at metal-metal oxide-graphene triple junction points.

    PubMed

    Kou, Rong; Shao, Yuyan; Mei, Donghai; Nie, Zimin; Wang, Donghai; Wang, Chongmin; Viswanathan, Vilayanur V; Park, Sehkyu; Aksay, Ilhan A; Lin, Yuehe; Wang, Yong; Liu, Jun

    2011-03-01

    Carbon-supported precious metal catalysts are widely used in heterogeneous catalysis and electrocatalysis, and enhancement of catalyst dispersion and stability by controlling the interfacial structure is highly desired. Here we report a new method to deposit metal oxides and metal nanoparticles on graphene and form stable metal-metal oxide-graphene triple junctions for electrocatalysis applications. We first synthesize indium tin oxide (ITO) nanocrystals directly on functionalized graphene sheets, forming an ITO-graphene hybrid. Platinum nanoparticles are then deposited, forming a unique triple-junction structure (Pt-ITO-graphene). Our experimental work and periodic density functional theory (DFT) calculations show that the supported Pt nanoparticles are more stable at the Pt-ITO-graphene triple junctions. Furthermore, DFT calculations suggest that the defects and functional groups on graphene also play an important role in stabilizing the catalysts. These new catalyst materials were tested for oxygen reduction for potential applications in polymer electrolyte membrane fuel cells, and they exhibited greatly enhanced stability and activity. PMID:21302925

  8. Solder for oxide layer-building metals and alloys

    DOEpatents

    Kronberg, James W.

    1992-01-01

    A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel. The comosition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than aproximatley 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300.degree. C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

  9. Solder for oxide layer-building metals and alloys

    DOEpatents

    Kronberg, J.W.

    1992-09-15

    A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel is disclosed. The composition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than approximately 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300 C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

  10. The MSFC complementary metal oxide semiconductor (including multilevel interconnect metallization) process handbook

    NASA Technical Reports Server (NTRS)

    Bouldin, D. L.; Eastes, R. W.; Feltner, W. R.; Hollis, B. R.; Routh, D. E.

    1979-01-01

    The fabrication techniques for creation of complementary metal oxide semiconductor integrated circuits at George C. Marshall Space Flight Center are described. Examples of C-MOS integrated circuits manufactured at MSFC are presented with functional descriptions of each. Typical electrical characteristics of both p-channel metal oxide semiconductor and n-channel metal oxide semiconductor discrete devices under given conditions are provided. Procedures design, mask making, packaging, and testing are included.

  11. Stabilization of Electrocatalytic Metal Nanoparticles at Metal-Metal Oxide-Graphene Triple Junction Points

    SciTech Connect

    Kou, Rong; Shao, Yuyan; Mei, Donghai; Nie, Zimin; Wang, Donghai; Wang, Chong M.; Viswanathan, Vilayanur V.; Park, Seh K.; Aksay, Ilhan A.; Lin, Yuehe; Wang, Yong; Liu, Jun

    2011-03-02

    Carbon-supported metal catalysts are widely used in heterogeneous catalysis and electrocatalysis. In this paper, we report a novel method to deposit metal catalysts and metal oxide nanoparticles on two-dimensional graphene sheets to improve the catalytic performance and stability of the catalyst materials. The new synthesis method allows indium tin oxide (ITO) nanocrystals to be directly grown on functionalized graphene sheets forming the ITO-graphene hybrids. Pt nanoparticles are then deposited to form a special triple-junction structure (Pt-ITO-graphene). Both experimental study and periodic density functional theory calculations show that the supported Pt nanoparticles are stable at Pt-ITO-graphene triple junction points. The new catalyst materials were tested for oxygen reduction for potential applications in polymer electrolyte membrane fuel cells, and they exhibited greatly enhanced stability and activity. The reasons for the high stability and activity of Pt-ITO-graphene are analyzed.

  12. Electric field effects in graphene/LaAlO{sub 3}/SrTiO{sub 3} heterostructures and nanostructures

    SciTech Connect

    Huang, Mengchen; Jnawali, Giriraj; Hsu, Jen-Feng; Dhingra, Shonali; Bi, Feng; Chen, Lu; D’Urso, Brian; Irvin, Patrick; Levy, Jeremy; Lee, Hyungwoo; Ryu, Sangwoo; Eom, Chang-Beom; Ghahari, Fereshte; Ravichandran, Jayakanth; Kim, Philip

    2015-06-01

    We report the development and characterization of graphene/LaAlO{sub 3}/SrTiO{sub 3} heterostructures. Complex-oxide heterostructures are created by pulsed laser deposition and are integrated with graphene using both mechanical exfoliation and transfer from chemical-vapor deposition on ultraflat copper substrates. Nanoscale control of the metal-insulator transition at the LaAlO{sub 3}/SrTiO{sub 3} interface, achieved using conductive atomic force microscope lithography, is demonstrated to be possible through the graphene layer. LaAlO{sub 3}/SrTiO{sub 3}-based electric field effects using a graphene top gate are also demonstrated. The ability to create functional field-effect devices provides the potential of graphene-complex-oxide heterostructures for scientific and technological advancement.

  13. Popping of graphite oxide: application in preparing metal nanoparticle catalysts.

    PubMed

    Gao, Yongjun; Chen, Xi; Zhang, Jiaguang; Asakura, Hiroyuki; Tanaka, Tsunehiro; Teramura, Kentaro; Ma, Ding; Yan, Ning

    2015-08-26

    A popcorn-like transformation of graphite oxide (GO) is reported and used to synthesize metal nanoparticle catalysts. The popping step is unique and essential, not only generating a high-surface-area support but also partially decomposing the metal precursors to form well-separated metal oxide nuclei, which would further evolve into highly dispersed and uniform-sized nanoparticles in the subsequent reduction. PMID:26179983

  14. Metal-oxide-semiconductor photocapacitor for sensing surface plasmon polaritons

    NASA Astrophysics Data System (ADS)

    Khalilzade-Rezaie, Farnood; Peale, Robert E.; Panjwani, Deep; Smith, Christian W.; Nath, Janardan; Lodge, Michael; Ishigami, Masa; Nader, Nima; Vangala, Shiva; Yannuzzi, Mark; Cleary, Justin W.

    2015-09-01

    An electronic detector of surface plasmon polaritons (SPP) is reported. SPPs optically excited on a metal surface using a prism coupler are detected by using a close-coupled metal-oxide-semiconductor capacitor. Semitransparent metal and graphene gates function similarly. We report the dependence of the photoresponse on substrate carrier type, carrier concentration, and back-contact biasing.

  15. Oxidized film structure and method of making epitaxial metal oxide structure

    DOEpatents

    Gan, Shupan [Richland, WA; Liang, Yong [Richland, WA

    2003-02-25

    A stable oxidized structure and an improved method of making such a structure, including an improved method of making an interfacial template for growing a crystalline metal oxide structure, are disclosed. The improved method comprises the steps of providing a substrate with a clean surface and depositing a metal on the surface at a high temperature under a vacuum to form a metal-substrate compound layer on the surface with a thickness of less than one monolayer. The compound layer is then oxidized by exposing the compound layer to essentially oxygen at a low partial pressure and low temperature. The method may further comprise the step of annealing the surface while under a vacuum to further stabilize the oxidized film structure. A crystalline metal oxide structure may be subsequently epitaxially grown by using the oxidized film structure as an interfacial template and depositing on the interfacial template at least one layer of a crystalline metal oxide.

  16. Catalysis using hydrous metal oxide ion exchanges

    DOEpatents

    Dosch, Robert G.; Stephens, Howard P.; Stohl, Frances V.

    1985-01-01

    In a process which is catalyzed by a catalyst comprising an active metal on a carrier, said metal being active as a catalyst for the process, an improvement is provided wherein the catalyst is a hydrous, alkali metal or alkaline earth metal titanate, zirconate, niobate or tantalate wherein alkali or alkaline earth metal cations have been exchanged with a catalytically effective amount of cations of said metal.

  17. Catalysis using hydrous metal oxide ion exchangers

    DOEpatents

    Dosch, R.G.; Stephens, H.P.; Stohl, F.V.

    1983-07-21

    In a process which is catalyzed by a catalyst comprising an active metal on a carrier, said metal being active as a catalyst for the process, an improvement is provided wherein the catalyst is a hydrous, alkali metal or alkaline earth metal titanate, zirconate, niobate or tantalate wherein alkali or alkaline earth metal cations have been exchanged with a catalytically effective amount of cations of said metal.

  18. Reduction of spalling in mixed metal oxide desulfurization sorbents by addition of a large promoter metal oxide

    DOEpatents

    Poston, James A.

    1997-01-01

    Mixed metal oxide pellets for removing hydrogen sulfide from fuel gas mixes derived from coal are stabilized for operation over repeated cycles of desulfurization and regeneration reactions by addition of a large promoter metal oxide such as lanthanum trioxide. The pellets, which may be principally made up of a mixed metal oxide such as zinc titanate, exhibit physical stability and lack of spalling or decrepitation over repeated cycles without loss of reactivity. The lanthanum oxide is mixed with pellet-forming components in an amount of 1 to 10 weight percent.

  19. Reduction of spalling in mixed metal oxide desulfurization sorbents by addition of a large promoter metal oxide

    DOEpatents

    Poston, J.A.

    1997-12-02

    Mixed metal oxide pellets for removing hydrogen sulfide from fuel gas mixes derived from coal are stabilized for operation over repeated cycles of desulfurization and regeneration reactions by addition of a large promoter metal oxide such as lanthanum trioxide. The pellets, which may be principally made up of a mixed metal oxide such as zinc titanate, exhibit physical stability and lack of spalling or decrepitation over repeated cycles without loss of reactivity. The lanthanum oxide is mixed with pellet-forming components in an amount of 1 to 10 weight percent.

  20. Recent applications of liquid metals featuring nanoscale surface oxides

    NASA Astrophysics Data System (ADS)

    Neumann, Taylor V.; Dickey, Michael D.

    2016-05-01

    This proceeding describes recent efforts from our group to control the shape and actuation of liquid metal. The liquid metal is an alloy of gallium and indium which is non-toxic, has negligible vapor pressure, and develops a thin, passivating surface oxide layer. The surface oxide allows the liquid metal to be patterned and shaped into structures that do not minimize interfacial energy. The surface oxide can be selectively removed by changes in pH or by applying a voltage. The surface oxide allows the liquid metal to be 3D printed to form free-standing structures. It also allows for the liquid metal to be injected into microfluidic channels and to maintain its shape within the channels. The selective removal of the oxide results in drastic changes in surface tension that can be used to control the flow behavior of the liquid metal. The metal can also wet thin, solid films of metal that accelerates droplets of the liquid along the metal traces .Here we discuss the properties and applications of liquid metal to make soft, reconfigurable electronics.

  1. Origin and distribution of charge carriers in LaAlO3-SrTiO3 oxide heterostructures in the high carrier density limit

    NASA Astrophysics Data System (ADS)

    Mukherjee, Sumanta; Pal, Banabir; Choudhury, Debraj; Sarkar, Indranil; Drube, Wolfgang; Gorgoi, Mihaela; Karis, Olof; Takagi, H.; Matsuno, Jobu; Sarma, D. D.

    2016-06-01

    Using hard x-ray photoelectron spectroscopy with variable photon energy (2-8 keV), we address the distribution of charge carriers in the prototypical LaAlO3 (LAO) and SrTiO3 (STO) oxide heterostructures with high carrier densities (1017cm-2 ). Our results demonstrate the presence of two distinct charge distributions in this system: one tied to the interface with a ˜1 -nm width and ˜2 -5 × 1014-cm-2 carrier concentration, while the other appears distributed nearly homogeneously through the bulk of STO corresponding to a much larger carrier contribution. Our results also establish bimodal oxygen vacancies, namely on top of LAO and throughout STO, quantitatively establishing these as the origin of the observed bimodal depth distribution of charge carriers in these highly doped sample.

  2. Nanoscale Metal Oxide Semiconductors for Gas Sensing

    NASA Technical Reports Server (NTRS)

    Hunter, Gary W.; Evans, Laura; Xu, Jennifer C.; VanderWal, Randy L.; Berger, Gordon M.; Kulis, Michael J.

    2011-01-01

    A report describes the fabrication and testing of nanoscale metal oxide semiconductors (MOSs) for gas and chemical sensing. This document examines the relationship between processing approaches and resulting sensor behavior. This is a core question related to a range of applications of nanotechnology and a number of different synthesis methods are discussed: thermal evaporation- condensation (TEC), controlled oxidation, and electrospinning. Advantages and limitations of each technique are listed, providing a processing overview to developers of nanotechnology- based systems. The results of a significant amount of testing and comparison are also described. A comparison is made between SnO2, ZnO, and TiO2 single-crystal nanowires and SnO2 polycrystalline nanofibers for gas sensing. The TECsynthesized single-crystal nanowires offer uniform crystal surfaces, resistance to sintering, and their synthesis may be done apart from the substrate. The TECproduced nanowire response is very low, even at the operating temperature of 200 C. In contrast, the electrospun polycrystalline nanofiber response is high, suggesting that junction potentials are superior to a continuous surface depletion layer as a transduction mechanism for chemisorption. Using a catalyst deposited upon the surface in the form of nanoparticles yields dramatic gains in sensitivity for both nanostructured, one-dimensional forms. For the nanowire materials, the response magnitude and response rate uniformly increase with increasing operating temperature. Such changes are interpreted in terms of accelerated surface diffusional processes, yielding greater access to chemisorbed oxygen species and faster dissociative chemisorption, respectively. Regardless of operating temperature, sensitivity of the nanofibers is a factor of 10 to 100 greater than that of nanowires with the same catalyst for the same test condition. In summary, nanostructure appears critical to governing the reactivity, as measured by electrical

  3. Preparation, Functionality, and Application of Metal Oxide-coated Noble Metal Nanoparticles.

    PubMed

    Liu, Shuhua; Regulacio, Michelle D; Tee, Si Yin; Khin, Yin Win; Teng, Choon Peng; Koh, Leng Duei; Guan, Guijian; Han, Ming-Yong

    2016-08-01

    With their remarkable properties and wide-ranging applications, nanostructures of noble metals and metal oxides have been receiving significantly increased attention in recent years. The desire to combine the properties of these two functional materials for specific applications has naturally prompted research in the design and synthesis of novel nanocomposites, consisting of both noble metal and metal-oxide components. In this review, particular attention is given to core-shell type metal oxide-coated noble metal nanostructures (i.e., metal@oxide), which display potential utility in applications, including photothermal therapy, catalytic conversions, photocatalysis, molecular sensing, and photovoltaics. Emerging research directions and areas are envisioned at the end to solicit more attention and work in this regard. PMID:27291595

  4. Formation of metal oxides by cathodic arc deposition

    SciTech Connect

    Anders, S.; Anders, A.; Rubin, M.; Wang, Z.; Raoux, S.; Kong, F.; Brown, I.G.

    1995-03-01

    Metal oxide thin films are of interest for a number of applications. Cathodic arc deposition, an established, industrially applied technique for formation of nitrides (e.g. TiN), can also be used for metal oxide thin film formation. A cathodic arc plasma source with desired cathode material is operated in an oxygen atmosphere, and metal oxides of various stoichiometric composition can be formed on different substrates. We report here on a series of experiments on metal oxide formation by cathodic arc deposition for different applications. Black copper oxide has been deposited on ALS components to increase the radiative heat transfer between the parts. Various metal oxides such as tungsten oxide, niobium oxide, nickel oxide and vanadium oxide have been deposited on ITO glass to form electrochromic films for window applications. Tantalum oxide films are of interest for replacing polymer electrolytes. Optical waveguide structures can be formed by refractive index variation using oxide multilayers. We have synthesized multilayers of Al{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/AI{sub 2}O{sub 3}/Si as possible basic structures for passive optoelectronic integrated circuits, and Al{sub 2-x}Er{sub x}O{sub 3} thin films with a variable Er concentration which is a potential component layer for the production of active optoelectronic integrated devices such as amplifiers or lasers at a wavelength of 1.53 {mu}m. Aluminum and chromium oxide films have been deposited on a number of substrates to impart improved corrosion resistance at high temperature. Titanium sub-oxides which are electrically conductive and corrosion resistant and stable in a number of aggressive environments have been deposited on various substrates. These sub-oxides are of great interest for use in electrochemical cells.

  5. Process for making a noble metal on tin oxide catalyst

    NASA Technical Reports Server (NTRS)

    Upchurch, Billy T. (Inventor); Davis, Patricia (Inventor); Miller, Irvin M. (Inventor)

    1989-01-01

    A quantity of reagent grade tin metal or compound, chloride-free, and high-surface-area silica spheres are placed in deionized water, followed by deaerating the mixture by boiling and adding an oxidizing agent, such as nitric acid. The nitric acid oxidizes the tin to metastannic acid which coats the spheres because the acid is absorbed on the substrate. The metastannic acid becomes tin oxide upon drying and calcining. The tin-oxide coated silica spheres are then placed in water and boiled. A chloride-free precious metal compound in aqueous solution is then added to the mixture containing the spheres, and the precious metal compound is reduced to a precious metal by use of a suitable reducing agent such as formic acid. Very beneficial results were obtained using the precious metal compound tetraammine platinum(II) hydroxide.

  6. Method for converting uranium oxides to uranium metal

    DOEpatents

    Duerksen, Walter K.

    1988-01-01

    A process is described for converting scrap and waste uranium oxide to uranium metal. The uranium oxide is sequentially reduced with a suitable reducing agent to a mixture of uranium metal and oxide products. The uranium metal is then converted to uranium hydride and the uranium hydride-containing mixture is then cooled to a temperature less than -100.degree. C. in an inert liquid which renders the uranium hydride ferromagnetic. The uranium hydride is then magnetically separated from the cooled mixture. The separated uranium hydride is readily converted to uranium metal by heating in an inert atmosphere. This process is environmentally acceptable and eliminates the use of hydrogen fluoride as well as the explosive conditions encountered in the previously employed bomb-reduction processes utilized for converting uranium oxides to uranium metal.

  7. Improving Metal-Oxide-Metal (MOM) Diode Performance Via the Optimization of the Oxide Layer

    NASA Astrophysics Data System (ADS)

    Dodd, Linzi E.; Shenton, Samantha A.; Gallant, Andrew J.; Wood, David

    2015-05-01

    Small area metal-oxide-metal (MOM) diodes are being investigated in many research groups for the detection of THz frequency radiation. In order to create a high-speed rectifying device, the central oxide layer of the MOM structure must be thin and have known physical characteristics. The thickness, structure and uniformity of the oxide can be controlled during the fabrication process. In the work presented here, the effects of both oxygen plasma concentration and annealing temperature during fabrication of MOM diodes have been explored. It has been found that, by reducing the oxygen gas concentration from previous work, the layer can be more repeatable and uniform. Furthermore, for an anneal temperature up to a threshold temperature in the to range, the performance of the diodes is excellent, with a value of zero-bias curvature coefficient (CCZB) that can be up to . For higher temperature treatments, the value of CCZB decreases to a maximum of . Similar trends in AC tests can be seen for voltage and current responsivity values.

  8. Engineering Polarons at a Metal Oxide Surface.

    PubMed

    Yim, C M; Watkins, M B; Wolf, M J; Pang, C L; Hermansson, K; Thornton, G

    2016-09-01

    Polarons in metal oxides are important in processes such as catalysis, high temperature superconductivity, and dielectric breakdown in nanoscale electronics. Here, we study the behavior of electron small polarons associated with oxygen vacancies at rutile TiO_{2}(110), using a combination of low temperature scanning tunneling microscopy (STM), density functional theory, and classical molecular dynamics calculations. We find that the electrons are symmetrically distributed around isolated vacancies at 78 K, but as the temperature is reduced, their distributions become increasingly asymmetric, confirming their polaronic nature. By manipulating isolated vacancies with the STM tip, we show that particular configurations of polarons are preferred for given locations of the vacancies, which we ascribe to small residual electric fields in the surface. We also form a series of vacancy complexes and manipulate the Ti ions surrounding them, both of which change the associated electronic distributions. Thus, we demonstrate that the configurations of polarons can be engineered, paving the way for the construction of conductive pathways relevant to resistive switching devices. PMID:27661706

  9. Engineering Polarons at a Metal Oxide Surface.

    PubMed

    Yim, C M; Watkins, M B; Wolf, M J; Pang, C L; Hermansson, K; Thornton, G

    2016-09-01

    Polarons in metal oxides are important in processes such as catalysis, high temperature superconductivity, and dielectric breakdown in nanoscale electronics. Here, we study the behavior of electron small polarons associated with oxygen vacancies at rutile TiO_{2}(110), using a combination of low temperature scanning tunneling microscopy (STM), density functional theory, and classical molecular dynamics calculations. We find that the electrons are symmetrically distributed around isolated vacancies at 78 K, but as the temperature is reduced, their distributions become increasingly asymmetric, confirming their polaronic nature. By manipulating isolated vacancies with the STM tip, we show that particular configurations of polarons are preferred for given locations of the vacancies, which we ascribe to small residual electric fields in the surface. We also form a series of vacancy complexes and manipulate the Ti ions surrounding them, both of which change the associated electronic distributions. Thus, we demonstrate that the configurations of polarons can be engineered, paving the way for the construction of conductive pathways relevant to resistive switching devices.

  10. Method and apparatus for the production of metal oxide powder

    DOEpatents

    Harris, Michael T.; Scott, Timothy C.; Byers, Charles H.

    1993-01-01

    The present invention provides a method for preparing metal oxide powder. A first solution, which is substantially organic, is prepared. A second solution, which is an aqueous solution substantially immiscible in the first solution, is prepared and delivered as drops to the first solution. The drops of the second solution are atomized by a pulsed electric field forming micro-drops of the second solution. Reagents in the first solution diffuse into and react with reactants in the micro-drops of the second solution forming metal hydroxide or oxalate particles. The metal hydroxide or metal oxalate particles are then recovered and dried to produce the metal oxide powder. An apparatus for preparing a metal oxide powder is also disclosed.

  11. Method and apparatus for the production of metal oxide powder

    DOEpatents

    Harris, Michael T.; Scott, Timothy C.; Byers, Charles H.

    1992-01-01

    The present invention provides a method for preparing metal oxide powder. A first solution, which is substantially organic, is prepared. A second solution, which is an aqueous solution substantially immiscible in the first solution, is prepared and delivered as drops to the first solution. The drops of the second solution are atomized by a pulsed electric field forming micro-drops of the second solution. Reagents in the first solution diffuse into and react with reactants in the micro-drops of the second solution forming metal hydroxide or oxalate particles. The metal hydroxide or metal oxalate particles are then recovered and dried to produce the metal oxide powder. An apparatus for preparing a metal oxide powder is also disclosed.

  12. Method and apparatus for the production of metal oxide powder

    DOEpatents

    Harris, M.T.; Scott, T.C.; Byers, C.H.

    1992-06-16

    The present invention provides a method for preparing metal oxide powder. A first solution, which is substantially organic, is prepared. A second solution, which is an aqueous solution substantially immiscible in the first solution, is prepared and delivered as drops to the first solution. The drops of the second solution are atomized by a pulsed electric field forming micro-drops of the second solution. Reagents in the first solution diffuse into and react with reactants in the micro-drops of the second solution forming metal hydroxide or oxalate particles. The metal hydroxide or metal oxalate particles are then recovered and dried to produce the metal oxide powder. An apparatus for preparing a metal oxide powder is also disclosed. 2 figs.

  13. Metal Oxide Gas Sensors: Sensitivity and Influencing Factors

    PubMed Central

    Wang, Chengxiang; Yin, Longwei; Zhang, Luyuan; Xiang, Dong; Gao, Rui

    2010-01-01

    Conductometric semiconducting metal oxide gas sensors have been widely used and investigated in the detection of gases. Investigations have indicated that the gas sensing process is strongly related to surface reactions, so one of the important parameters of gas sensors, the sensitivity of the metal oxide based materials, will change with the factors influencing the surface reactions, such as chemical components, surface-modification and microstructures of sensing layers, temperature and humidity. In this brief review, attention will be focused on changes of sensitivity of conductometric semiconducting metal oxide gas sensors due to the five factors mentioned above. PMID:22294916

  14. Stimulated oxidation of metals (laser, electric field, etc.): Comparative studies

    NASA Astrophysics Data System (ADS)

    Nánai, László; Füle, Miklós

    2014-11-01

    In this report we demonstrate the importance of metal oxides, e.g. thin films and nanostructures, in modern science and technology. The basic laws of oxide thickness on base of diffusion of specimens versus time in different circumstances (Cabrera-Mott and Wagner laws) under the influence of external fields, e.g. electromagnetic field, static electric and magnetic field, are demonstrated. We give experimental results for various metal oxide layers over a wide range of different metals. Theoretical explanations are provided as well for the most reliable circumstances.

  15. Inert electrode containing metal oxides, copper and noble metal

    DOEpatents

    Ray, Siba P.; Woods, Robert W.; Dawless, Robert K.; Hosler, Robert B.

    2000-01-01

    A cermet composite material is made by treating at an elevated temperature a mixture comprising a compound of iron and a compound of at least one other metal, together with an alloy or mixture of copper and a noble metal. The alloy or mixture preferably comprises particles having an interior portion containing more copper than noble metal and an exterior portion containing more noble metal than copper. The noble metal is preferably silver. The cermet composite material preferably includes alloy phase portions and a ceramic phase portion. At least part of the ceramic phase portion preferably has a spinel structure.

  16. Inert electrode containing metal oxides, copper and noble metal

    DOEpatents

    Ray, Siba P.; Woods, Robert W.; Dawless, Robert K.; Hosler, Robert B.

    2001-01-01

    A cermet composite material is made by treating at an elevated temperature a mixture comprising a compound of iron and a compound of at least one other metal, together with an alloy or mixture of copper and a noble metal. The alloy or mixture preferably comprises particles having an interior portion containing more copper than noble metal and an exterior portion containing more noble metal than copper. The noble metal is preferably silver. The cermet composite material preferably includes alloy phase portions and a ceramic phase portion. At least part of the ceramic phase portion preferably has a spinel structure.

  17. Multiscale model of metal alloy oxidation at grain boundaries.

    PubMed

    Sushko, Maria L; Alexandrov, Vitaly; Schreiber, Daniel K; Rosso, Kevin M; Bruemmer, Stephen M

    2015-06-01

    High temperature intergranular oxidation and corrosion of metal alloys is one of the primary causes of materials degradation in nuclear systems. In order to gain insights into grain boundary oxidation processes, a mesoscale metal alloy oxidation model is established by combining quantum Density Functional Theory (DFT) and mesoscopic Poisson-Nernst-Planck/classical DFT with predictions focused on Ni alloyed with either Cr or Al. Analysis of species and fluxes at steady-state conditions indicates that the oxidation process involves vacancy-mediated transport of Ni and the minor alloying element to the oxidation front and the formation of stable metal oxides. The simulations further demonstrate that the mechanism of oxidation for Ni-5Cr and Ni-4Al is qualitatively different. Intergranular oxidation of Ni-5Cr involves the selective oxidation of the minor element and not matrix Ni, due to slower diffusion of Ni relative to Cr in the alloy and due to the significantly smaller energy gain upon the formation of nickel oxide compared to that of Cr2O3. This essentially one-component oxidation process results in continuous oxide formation and a monotonic Cr vacancy distribution ahead of the oxidation front, peaking at alloy/oxide interface. In contrast, Ni and Al are both oxidized in Ni-4Al forming a mixed spinel NiAl2O4. Different diffusivities of Ni and Al give rise to a complex elemental distribution in the vicinity of the oxidation front. Slower diffusing Ni accumulates in the oxide and metal within 3 nm of the interface, while Al penetrates deeper into the oxide phase. Ni and Al are both depleted from the region 3-10 nm ahead of the oxidation front creating voids. The oxide microstructure is also different. Cr2O3 has a plate-like structure with 1.2-1.7 nm wide pores running along the grain boundary, while NiAl2O4 has 1.5 nm wide pores in the direction parallel to the grain boundary and 0.6 nm pores in the perpendicular direction providing an additional pathway for oxygen

  18. Multiscale model of metal alloy oxidation at grain boundaries

    SciTech Connect

    Sushko, Maria L. Alexandrov, Vitaly; Schreiber, Daniel K.; Rosso, Kevin M.; Bruemmer, Stephen M.

    2015-06-07

    High temperature intergranular oxidation and corrosion of metal alloys is one of the primary causes of materials degradation in nuclear systems. In order to gain insights into grain boundary oxidation processes, a mesoscale metal alloy oxidation model is established by combining quantum Density Functional Theory (DFT) and mesoscopic Poisson-Nernst-Planck/classical DFT with predictions focused on Ni alloyed with either Cr or Al. Analysis of species and fluxes at steady-state conditions indicates that the oxidation process involves vacancy-mediated transport of Ni and the minor alloying element to the oxidation front and the formation of stable metal oxides. The simulations further demonstrate that the mechanism of oxidation for Ni-5Cr and Ni-4Al is qualitatively different. Intergranular oxidation of Ni-5Cr involves the selective oxidation of the minor element and not matrix Ni, due to slower diffusion of Ni relative to Cr in the alloy and due to the significantly smaller energy gain upon the formation of nickel oxide compared to that of Cr{sub 2}O{sub 3}. This essentially one-component oxidation process results in continuous oxide formation and a monotonic Cr vacancy distribution ahead of the oxidation front, peaking at alloy/oxide interface. In contrast, Ni and Al are both oxidized in Ni-4Al forming a mixed spinel NiAl{sub 2}O{sub 4}. Different diffusivities of Ni and Al give rise to a complex elemental distribution in the vicinity of the oxidation front. Slower diffusing Ni accumulates in the oxide and metal within 3 nm of the interface, while Al penetrates deeper into the oxide phase. Ni and Al are both depleted from the region 3–10 nm ahead of the oxidation front creating voids. The oxide microstructure is also different. Cr{sub 2}O{sub 3} has a plate-like structure with 1.2–1.7 nm wide pores running along the grain boundary, while NiAl{sub 2}O{sub 4} has 1.5 nm wide pores in the direction parallel to the grain boundary and 0.6 nm pores in the perpendicular

  19. Multiscale model of metal alloy oxidation at grain boundaries

    NASA Astrophysics Data System (ADS)

    Sushko, Maria L.; Alexandrov, Vitaly; Schreiber, Daniel K.; Rosso, Kevin M.; Bruemmer, Stephen M.

    2015-06-01

    High temperature intergranular oxidation and corrosion of metal alloys is one of the primary causes of materials degradation in nuclear systems. In order to gain insights into grain boundary oxidation processes, a mesoscale metal alloy oxidation model is established by combining quantum Density Functional Theory (DFT) and mesoscopic Poisson-Nernst-Planck/classical DFT with predictions focused on Ni alloyed with either Cr or Al. Analysis of species and fluxes at steady-state conditions indicates that the oxidation process involves vacancy-mediated transport of Ni and the minor alloying element to the oxidation front and the formation of stable metal oxides. The simulations further demonstrate that the mechanism of oxidation for Ni-5Cr and Ni-4Al is qualitatively different. Intergranular oxidation of Ni-5Cr involves the selective oxidation of the minor element and not matrix Ni, due to slower diffusion of Ni relative to Cr in the alloy and due to the significantly smaller energy gain upon the formation of nickel oxide compared to that of Cr2O3. This essentially one-component oxidation process results in continuous oxide formation and a monotonic Cr vacancy distribution ahead of the oxidation front, peaking at alloy/oxide interface. In contrast, Ni and Al are both oxidized in Ni-4Al forming a mixed spinel NiAl2O4. Different diffusivities of Ni and Al give rise to a complex elemental distribution in the vicinity of the oxidation front. Slower diffusing Ni accumulates in the oxide and metal within 3 nm of the interface, while Al penetrates deeper into the oxide phase. Ni and Al are both depleted from the region 3-10 nm ahead of the oxidation front creating voids. The oxide microstructure is also different. Cr2O3 has a plate-like structure with 1.2-1.7 nm wide pores running along the grain boundary, while NiAl2O4 has 1.5 nm wide pores in the direction parallel to the grain boundary and 0.6 nm pores in the perpendicular direction providing an additional pathway for oxygen

  20. Progress in base-metal water oxidation catalysis.

    PubMed

    Parent, Alexander Rene; Sakai, Ken

    2014-08-01

    This minireview provides a brief overview of the progress that has been made in developing homogeneous water oxidation catalysts based on base metals (manganese, iron, cobalt, nickel, and copper) from the 1990s to mid-2014. The impact of each contribution is analyzed, and opportunities for further improvement are noted. In addition, the relative stabilities of the base-metal catalysts that have been reported are compared to illustrate the importance of developing more robust catalytic systems by using these metals. This manuscript is intended to provide a firm foundation for researchers entering the field of water oxidation based on base metals and a useful reference for those currently involved in the field.

  1. Tuning the Magnetic Properties of Metal Oxide Nanocrystal Heterostructures by Cation Exchange

    PubMed Central

    2013-01-01

    For three types of colloidal magnetic nanocrystals, we demonstrate that postsynthetic cation exchange enables tuning of the nanocrystal’s magnetic properties and achieving characteristics not obtainable by conventional synthetic routes. While the cation exchange procedure, performed in solution phase approach, was restricted so far to chalcogenide based semiconductor nanocrystals, here ferrite-based nanocrystals were subjected to a Fe2+ to Co2+ cation exchange procedure. This allows tracing of the compositional modifications by systematic and detailed magnetic characterization. In homogeneous magnetite nanocrystals and in gold/magnetite core shell nanocrystals the cation exchange increases the coercivity field, the remanence magnetization, as well as the superparamagnetic blocking temperature. For core/shell nanoheterostructures a selective doping of either the shell or predominantly of the core with Co2+ is demonstrated. By applying the cation exchange to FeO/CoFe2O4 core/shell nanocrystals the Neél temperature of the core material is increased and exchange-bias effects are enhanced so that vertical shifts of the hysteresis loops are obtained which are superior to those in any other system. PMID:23362940

  2. Research Update: Orbital polarization in LaNiO{sub 3}-based heterostructures

    SciTech Connect

    Disa, Ankit S. Walker, F. J.; Ismail-Beigi, Sohrab; Ahn, Charles H.

    2015-06-01

    The relative energies and occupancies of valence orbital states can dramatically influence collective electronic and magnetic phenomena in correlated transition metal oxide systems. We review the current state of research on the modification and control of these orbital properties in rare-earth nickelates, especially LaNiO{sub 3}, a model degenerate d orbital system where significant recent progress has been made. Theoretical and experimental results on thin films and heterostructures are described, including the influence of electronic correlation effects. We highlight the latest approaches to achieving non-degenerate bands and discuss the outlook and applicability of this body of knowledge to other correlated metal oxide systems.

  3. Aerosol chemical vapor deposition of metal oxide films

    DOEpatents

    Ott, Kevin C.; Kodas, Toivo T.

    1994-01-01

    A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said FIELD OF THE INVENTION The present invention relates to the field of film coating deposition techniques, and more particularly to the deposition of multicomponent metal oxide films by aerosol chemical vapor deposition. This invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).

  4. Method of physical vapor deposition of metal oxides on semiconductors

    DOEpatents

    Norton, David P.

    2001-01-01

    A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

  5. Stoichiometry-driven metal-to-insulator transition in NdTiO{sub 3}/SrTiO{sub 3} heterostructures

    SciTech Connect

    Xu, Peng; Phelan, Daniel; Seok Jeong, Jong; Andre Mkhoyan, K.; Jalan, Bharat

    2014-02-24

    By controlling stoichiometry via a hybrid molecular beam epitaxy approach, we report on the study of thin film growth and the electronic transport properties of phase-pure, epitaxial NdTiO{sub 3}/SrTiO{sub 3} heterostructures grown on (001) (La{sub 0.3}Sr{sub 0.7})(Al{sub 0.65}Ta{sub 0.35})O{sub 3} (LSAT) substrates as a function of cation stoichiometry in NdTiO{sub 3}. Despite the symmetry mismatch between bulk NdTiO{sub 3} and the substrate, NdTiO{sub 3} films grew in an atomic layer-by-layer fashion over a range of cation stoichiometry; however amorphous films resulted in cases of extreme cation non-stoichiometry. Temperature-dependent sheet resistance measurements were consistent with Fermi-liquid metallic behavior over a wide temperature range, but revealed a remarkable crossover from metal-to-insulator (M-I) type behavior at low temperatures for all compositions. A direct correlation between cation stoichiometry, transport behavior, and the temperature of M-I transition is established.

  6. Voltage Control of Metal-insulator Transition and Non-volatile Ferroelastic Switching of Resistance in VOx/PMN-PT Heterostructures

    PubMed Central

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X.

    2014-01-01

    The central challenge in realizing electronics based on strongly correlated electronic states, or ‘Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices. PMID:25088796

  7. Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.

    PubMed

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X

    2014-01-01

    The central challenge in realizing electronics based on strongly correlated electronic states, or 'Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices. PMID:25088796

  8. Voltage Control of Metal-insulator Transition and Non-volatile Ferroelastic Switching of Resistance in VOx/PMN-PT Heterostructures

    NASA Astrophysics Data System (ADS)

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X.

    2014-08-01

    The central challenge in realizing electronics based on strongly correlated electronic states, or `Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

  9. Synthesis and Characterization of Mixed Metal Oxide Nanocomposite Energetic Materials

    SciTech Connect

    Clapsaddle, B; Gash, A; Plantier, K; Pantoya, M; Jr., J S; Simpson, R

    2004-04-27

    In the field of composite energetic materials, properties such as ingredient distribution, particle size, and morphology affect both sensitivity and performance. Since the reaction kinetics of composite energetic materials are typically controlled by the mass transport rates between reactants, one would anticipate new and potentially exceptional performance from energetic nanocomposites. We have developed a new method of making nanostructured energetic materials, specifically explosives, propellants, and pyrotechnics, using sol-gel chemistry. A novel sol-gel approach has proven successful in preparing metal oxide/silicon oxide nanocomposites in which the metal oxide is the major component. By introducing a fuel metal, such as aluminum, into the metal oxide/silicon oxide matrix, energetic materials based on thermite reactions can be fabricated. Two of the metal oxides are tungsten trioxide and iron(III) oxide, both of which are of interest in the field of energetic materials. In addition, due to the large availability of organically functionalized silanes, the silicon oxide phase can be used as a unique way of introducing organic additives into the bulk metal oxide materials. These organic additives can cause the generation of gas upon ignition of the materials, therefore resulting in a composite material that can perform pressure/volume work. Furthermore, the desired organic functionality is well dispersed throughout the composite material on the nanoscale with the other components, and is therefore subject to the same increased reaction kinetics. The resulting nanoscale distribution of all the ingredients displays energetic properties not seen in its microscale counterparts due to the expected increase of mass transport rates between the reactants. The synthesis and characterization of iron(III) oxide/organosilicon oxide nanocomposites and their performance as energetic materials will be discussed.

  10. Displacement method and apparatus for reducing passivated metal powders and metal oxides

    DOEpatents

    Morrell; Jonathan S. , Ripley; Edward B.

    2009-05-05

    A method of reducing target metal oxides and passivated metals to their metallic state. A reduction reaction is used, often combined with a flux agent to enhance separation of the reaction products. Thermal energy in the form of conventional furnace, infrared, or microwave heating may be applied in combination with the reduction reaction.

  11. Cryochemical method for forming spherical metal oxide particles from metal salt solutions

    DOEpatents

    Tinkle, M.C.

    1973-12-01

    A method is described of preparing small metal oxide spheres cryochemically utilizing metal salts (e.g., nitrates) that cannot readily be dried and calcined without loss of sphericity of the particles. Such metal salts are cryochemically formed into small spheres, partially or completely converted to an insoluble salt, and dried and calcined. (Official Gazette)

  12. Electrolytic separation of crystals of transition-metal oxides

    NASA Technical Reports Server (NTRS)

    Arnott, R. J.; Feretti, A.; Kunnamann, W.

    1969-01-01

    Versatile flux system grows large, well-formed, stoichiometric single crystals of mixed oxides of the transition-metal elements. These crystals have important uses in the microwave field, and applications as lasers and masers in communications.

  13. Semiconducting Metal Oxide Based Sensors for Selective Gas Pollutant Detection

    PubMed Central

    Kanan, Sofian M.; El-Kadri, Oussama M.; Abu-Yousef, Imad A.; Kanan, Marsha C.

    2009-01-01

    A review of some papers published in the last fifty years that focus on the semiconducting metal oxide (SMO) based sensors for the selective and sensitive detection of various environmental pollutants is presented. PMID:22408500

  14. Plutonium metal and oxide container weld development and qualification

    SciTech Connect

    Fernandez, R.; Horrell, D.R.; Hoth, C.W.; Pierce, S.W.; Rink, N.A.; Rivera, Y.M.; Sandoval, V.D.

    1996-01-01

    Welds were qualified for a container system to be used for long-term storage of plutonium metal and oxide. Inner and outer containers are formed of standard tubing with stamped end pieces gas-tungsten-arc (GTA) welded onto both ends. The weld qualification identified GTA parameters to produce a robust weld that meets the requirements of the Department of Energy standard DOE-STD-3013-94, ``Criteria for the Safe Storage of Plutonium Metals and Oxides.``

  15. Development of metal oxide impregnated stilbite thick film ethanol sensor

    NASA Astrophysics Data System (ADS)

    Mahabole, M. P.; Lakhane, M. A.; Choudhari, A. L.; Khairnar, R. S.

    2016-05-01

    This paper presents the study of the sensing efficiency of Titanium oxide/ Stilbite and Copper oxide /Stilbite composites towards detection of hazardous pollutants like ethanol. Stilbite based composites are prepared by physically mixing zeolite with metal oxides namely TiO2 and CuO with weight ratios of 25:75, 50:50 and 75:25. The resulting sensor materials are characterized by X-ray diffraction and Fourier Transform Infrared Spectroscopy techniques. Composite sensors are fabricated in the form of thick film by using screen printing technique. The effect of metal oxide concentration on various ethanol sensing parameters such as operating temperature, maximum uptake capacity and response/recovery time are investigated. The results indicate that metal oxide impregnated stilbite composites have great potential as low temperature ethanol sensor.

  16. X-ray Absorption Study of Graphene Oxide and Transition Metal Oxide Nanocomposites

    PubMed Central

    2015-01-01

    The surface properties of the electrode materials play a crucial role in determining the performance and efficiency of energy storage devices. Graphene oxide and nanostructures of 3d transition metal oxides were synthesized for construction of electrodes in supercapacitors, and the electronic structure and oxidation states were probed using near-edge X-ray absorption fine structure. Understanding the chemistry of graphene oxide would provide valuable insight into its reactivity and properties as the graphene oxide transformation to reduced-graphene oxide is a key step in the synthesis of the electrode materials. Polarized behavior of the synchrotron X-rays and the angular dependency of the near-edge X-ray absorption fine structures (NEXAFS) have been utilized to study the orientation of the σ and π bonds of the graphene oxide and graphene oxide–metal oxide nanocomposites. The core-level transitions of individual metal oxides and that of the graphene oxide nanocomposite showed that the interaction of graphene oxide with the metal oxide nanostructures has not altered the electronic structure of either of them. As the restoration of the π network is important for good electrical conductivity, the C K edge NEXAFS spectra of reduced graphene oxide nanocomposites confirms the same through increased intensity of the sp2-derived unoccupied states π* band. A pronounced angular dependency of the reduced sample and the formation of excitonic peaks confirmed the formation of extended conjugated network. PMID:25152800

  17. Process for Making a Noble Metal on Tin Oxide Catalyst

    NASA Technical Reports Server (NTRS)

    Davis, Patricia; Miller, Irvin; Upchurch, Billy

    2010-01-01

    To produce a noble metal-on-metal oxide catalyst on an inert, high-surface-area support material (that functions as a catalyst at approximately room temperature using chloride-free reagents), for use in a carbon dioxide laser, requires two steps: First, a commercially available, inert, high-surface-area support material (silica spheres) is coated with a thin layer of metal oxide, a monolayer equivalent. Very beneficial results have been obtained using nitric acid as an oxidizing agent because it leaves no residue. It is also helpful if the spheres are first deaerated by boiling in water to allow the entire surface to be coated. A metal, such as tin, is then dissolved in the oxidizing agent/support material mixture to yield, in the case of tin, metastannic acid. Although tin has proven especially beneficial for use in a closed-cycle CO2 laser, in general any metal with two valence states, such as most transition metals and antimony, may be used. The metastannic acid will be adsorbed onto the high-surface-area spheres, coating them. Any excess oxidizing agent is then evaporated, and the resulting metastannic acid-coated spheres are dried and calcined, whereby the metastannic acid becomes tin(IV) oxide. The second step is accomplished by preparing an aqueous mixture of the tin(IV) oxide-coated spheres, and a soluble, chloride-free salt of at least one catalyst metal. The catalyst metal may be selected from the group consisting of platinum, palladium, ruthenium, gold, and rhodium, or other platinum group metals. Extremely beneficial results have been obtained using chloride-free salts of platinum, palladium, or a combination thereof, such as tetraammineplatinum (II) hydroxide ([Pt(NH3)4] (OH)2), or tetraammine palladium nitrate ([Pd(NH3)4](NO3)2).

  18. Multiscale model of metal alloy oxidation at grain boundaries

    SciTech Connect

    Sushko, Maria L.; Alexandrov, Vitali Y.; Schreiber, Daniel K.; Rosso, Kevin M.; Bruemmer, Stephen M.

    2015-06-07

    High temperature intergranular oxidation and corrosion of metal alloys is one of the primary causes of materials degradation in nuclear systems. In order to gain insights into grain boundary oxidation processes, a mesoscale metal alloy oxidation model at experimentally relevant length scales is established by combining quantum Density Functional Theory (DFT) and mesoscopic Poisson-Nernst-Planck/classical DFT with predictions focused on Ni alloyed with either Cr or Al. Analysis of species and fluxes at steady-state conditions indicates that the oxidation process involves vacancy-mediated transport of Ni and the minor alloying element to the oxidation front and the formation of stable metal oxides. The simulations further demonstrate that the mechanism of oxidation for Ni-5Cr and Ni-4Al is qualitatively different. Intergranular oxidation of Ni-5Cr involves the selective oxidation of the minor element and not matrix Ni, due to slower diffusion of Ni relative to Cr in the alloy and due to the significantly smaller energy gain upon the formation of nickel oxide compared to that of Cr2O3. This essentially one-component oxidation process results in continuous oxide formation and a monotonic Cr vacancy distribution ahead of the oxidation front, peaking at alloy/oxide interface. In contrast, Ni and Al are both oxidized in Ni-4Al forming a mixed spinel NiAl2O4. Different diffusivities of Ni and Al give rise to a complex elemental distribution in the vicinity of the oxidation front. Slower diffusing Ni accumulates in the oxide and metal within 3 nm of the interface, while Al penetrates deeper into the oxide phase. Ni and Al are both depleted from the region 3–10 nm ahead of the oxidation front creating voids. The oxide microstructure is also different. Cr2O3 has a plate-like structure with 1.2 - 1.7 nm wide pores running along the grain boundary, while NiAl2O4 has 1.5 nm wide pores in the direction parallel to the grain boundary and 0.6 nm pores in the perpendicular

  19. Spin-orbit and exchange effects in the 2DEG of BiAlO3-based oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Rahmanizadeh, K.; Bihlmayer, G.; Blügel, S.

    2016-07-01

    We study the electronic properties of the BiAlO3/SrTiO3 (BAO/STO) interface and compare them to the well-studied LaAlO3/STO system. Due to the ferroelectricity of BAO it is possible to manipulate the carrier density at the interface. Using density functional theory, we investigate the spin-orbit coupling (SOC) effects in the two-dimensional electron gas (2DEG) in BAO/STO and its magnetic counterparts, the BAO/EuTiO3 and BAO/Sr2NiWO6 heterostructures. In the latter two structures, the proximity to ferroelectric insulators breaks the time-reversal symmetry in the 2DEG and can lead, in combination with inversion symmetry breaking and SOC to a single Fermi surface, analogous to the situation in topological insulators.

  20. Thermochemical analyses of the oxidative vaporization of metals and oxides by oxygen molecules and atoms

    NASA Technical Reports Server (NTRS)

    Kohl, F. J.; Leisz, D. M.; Fryburg, G. C.; Stearns, C. A.

    1977-01-01

    Equilibrium thermochemical analyses are employed to describe the vaporization processes of metals and metal oxides upon exposure to molecular and atomic oxygen. Specific analytic results for the chromium-, platinum-, aluminum-, and silicon-oxygen systems are presented. Maximum rates of oxidative vaporization predicted from the thermochemical considerations are compared with experimental results for chromium and platinum. The oxidative vaporization rates of chromium and platinum are considerably enhanced by oxygen atoms.

  1. Selective Growth of Noble Gases at Metal/Oxide Interface.

    PubMed

    Takahashi, Keisuke; Oka, Hiroshi; Ohnuki, Somei

    2016-02-17

    The locations and roles of noble gases at an oxide/metal interface in oxide dispersed metal are theoretically and experimentally investigated. Oxide dispersed metal consisting of FCC Fe and Y2Hf2O7 (Y2Ti2O7) is synthesized by mechanical alloying under a saturated Ar gas environment. Transmission electron microscopy and density functional theory observes the strain field at the interface of FCC Fe {111} and Y2Hf2O7 {111} whose physical origin emerges from surface reconstruction due to charge transfer. Noble gases are experimentally observed at the oxide (Y2Ti2O7) site and calculations reveal that the noble gases segregate the interface and grow toward the oxide site. In general, the interface is defined as the trapping site for noble gases; however, transmission electron microscopy and density functional theory found evidence which shows that noble gases grow toward the oxide, contrary to the generally held idea that the interface is the final trapping site for noble gases. Furthermore, calculations show that the inclusion of He/Ar hardens the oxide, suggesting that material fractures could begin from the noble gas bubble within the oxides. Thus, experimental and theoretical results demonstrate that noble gases grow from the interface toward the oxide and that oxides behave as a trapping site for noble gases. PMID:26840881

  2. Complexed metals in hazardous waste: Limitations of conventional chemical oxidation

    SciTech Connect

    Diel, B.N.; Kuchynka, D.J.; Borchert, J.

    1994-12-31

    In the management of hazardous waste, more is known regarding the treatment of metals than about the fixation, destruction and/or immobilization of any other hazardous constituent group. Metals are the only hazardous constituents which cannot be destroyed, and so must be converted to their least soluble and/or reactive form to prevent reentry into the environment. The occurrence of complexed metals, e.g., metallocyanides, and/or chelated metals, e.g., M{center_dot}EDTA in hazardous waste streams presents formidable challenges to conventional waste treatment practices. This paper presents the results of extensive research into the destruction (chemical oxidation) of metallocyanides and metal-chelates, defines the utility and limitations of conventional chemical oxidation approaches, illustrates some of the waste management difficulties presented by such species, and presents preliminary data on the UV/H{sub 2}O{sub 2} photodecomposition of chelated metals.

  3. Sol-gel metal oxide and metal oxide/polymer multilayers applied by meniscus coating

    SciTech Connect

    Britten, J.A.; Thomas, I.M.

    1993-10-01

    We are developing a meniscus coating process for manufacturing large-aperture dielectric multilayer high reflectors (HR`s) at ambient conditions from liquid suspensions. Using a lab-scale coater capable of coating 150 mm square substrates, we have produced several HR`s which give 99% + reflection with 24 layers and with edge effects confined to about 10 mm. In calendar 1993 we are taking delivery of an automated meniscus coating machine capable of coating substrates up to 400 mm wide and 600 mm long. The laser-damage threshold and failure stress of sol-gel thin films can be substantially increased through the use of soluble polymers which act as binders for the metal oxide particles comprising the deposited film. Refractive index control of the film is also possible through varying the polymer/oxide ratio. Much of our present effort present is in optimizing oxide particle/binder/solvent formulations for the high-index material. Films from colloidal zirconia strengthened with polyvinylpyrollidone (PVP) have given best results to date. An increase in the laser damage threshold (LDT) for single layers has been shown to significantly increase with increased polymer loading, but as yet the LDT for multilayer stacks remains low.

  4. Metal-oxide-based energetic materials and synthesis thereof

    DOEpatents

    Tillotson, Thomas M. , Simpson; Randall L.; Hrubesh, Lawrence W.

    2006-01-17

    A method of preparing energetic metal-oxide-based energetic materials using sol-gel chemistry has been invented. The wet chemical sol-gel processing provides an improvement in both safety and performance. Essentially, a metal-oxide oxidizer skeletal structure is prepared from hydrolyzable metals (metal salts or metal alkoxides) with fuel added to the sol prior to gelation or synthesized within the porosity metal-oxide gel matrix. With metal salt precursors a proton scavenger is used to destabilize the sol and induce gelation. With metal alkoxide precursors standard well-known sol-gel hydrolysis and condensation reactions are used. Drying is done by standard sol-gel practices, either by a slow evaporation of the liquid residing within the pores to produce a high density solid nanocomposite, or by supercritical extraction to produce a lower density, high porous nanocomposite. Other ingredients may be added to this basic nanostructure to change physical and chemical properties, which include organic constituents for binders or gas generators during reactions, burn rate modifiers, or spectral emitters.

  5. Integrated photo-responsive metal oxide semiconductor circuit

    NASA Technical Reports Server (NTRS)

    Jhabvala, Murzban D. (Inventor); Dargo, David R. (Inventor); Lyons, John C. (Inventor)

    1987-01-01

    An infrared photoresponsive element (RD) is monolithically integrated into a source follower circuit of a metal oxide semiconductor device by depositing a layer of a lead chalcogenide as a photoresistive element forming an ohmic bridge between two metallization strips serving as electrodes of the circuit. Voltage from the circuit varies in response to illumination of the layer by infrared radiation.

  6. Creating Two-Dimensional Electron Gas in Polar/Polar Perovskite Oxide Heterostructures: First-Principles Characterization of LaAlO3/A(+)B(5+)O3.

    PubMed

    Wang, Yaqin; Tang, Wu; Cheng, Jianli; Behtash, Maziar; Yang, Kesong

    2016-06-01

    By using first-principles electronic structure calculations, we explored the possibility of producing two-dimensional electron gas (2DEG) at the polar/polar (LaO)(+)/(BO2)(+) interface in the LaAlO3/A(+)B(5+)O3 (A = Na and K, B = Nb and Ta) heterostructures (HS). Unlike the prototype polar/nonpolar LaAlO3/SrTiO3 HS system where there exists a least film thickness of four LaAlO3 unit cells to have an insulator-to-metal transition, we found that the polar/polar LaAlO3/A(+)B(5+)O3 HS systems are intrinsically conducting at their interfaces without an insulator-to-metal transition. The interfacial charge carrier densities of these polar/polar HS systems are on the order of 10(14) cm(-2), much larger than that of the LaAlO3/SrTiO3 system. This is mainly attributed to two donor layers, i.e., (LaO)(+) and (BO2)(+) (B = Nb and Ta), in the polar/polar LaAlO3/A(+)B(5+)O3 systems, while only one (LaO)(+) donor layer in the polar/nonpolar LaAlO3/SrTiO3 system. In addition, it is expected that, due to less localized Nb 4d and Ta 5d orbitals with respect to Ti 3d orbitals, these LaAlO3/A(+)B(5+)O3 HS systems can exhibit potentially higher electron mobility because of their smaller electron effective mass than that in the LaAlO3/SrTiO3 system. Our results demonstrate that the electronic reconstruction at the polar/polar interface could be an alternative way to produce superior 2DEG in the perovskite-oxide-based HS systems. PMID:27160513

  7. Creating Two-Dimensional Electron Gas in Polar/Polar Perovskite Oxide Heterostructures: First-Principles Characterization of LaAlO3/A(+)B(5+)O3.

    PubMed

    Wang, Yaqin; Tang, Wu; Cheng, Jianli; Behtash, Maziar; Yang, Kesong

    2016-06-01

    By using first-principles electronic structure calculations, we explored the possibility of producing two-dimensional electron gas (2DEG) at the polar/polar (LaO)(+)/(BO2)(+) interface in the LaAlO3/A(+)B(5+)O3 (A = Na and K, B = Nb and Ta) heterostructures (HS). Unlike the prototype polar/nonpolar LaAlO3/SrTiO3 HS system where there exists a least film thickness of four LaAlO3 unit cells to have an insulator-to-metal transition, we found that the polar/polar LaAlO3/A(+)B(5+)O3 HS systems are intrinsically conducting at their interfaces without an insulator-to-metal transition. The interfacial charge carrier densities of these polar/polar HS systems are on the order of 10(14) cm(-2), much larger than that of the LaAlO3/SrTiO3 system. This is mainly attributed to two donor layers, i.e., (LaO)(+) and (BO2)(+) (B = Nb and Ta), in the polar/polar LaAlO3/A(+)B(5+)O3 systems, while only one (LaO)(+) donor layer in the polar/nonpolar LaAlO3/SrTiO3 system. In addition, it is expected that, due to less localized Nb 4d and Ta 5d orbitals with respect to Ti 3d orbitals, these LaAlO3/A(+)B(5+)O3 HS systems can exhibit potentially higher electron mobility because of their smaller electron effective mass than that in the LaAlO3/SrTiO3 system. Our results demonstrate that the electronic reconstruction at the polar/polar interface could be an alternative way to produce superior 2DEG in the perovskite-oxide-based HS systems.

  8. Reductive mobilization of oxide-bound metals

    SciTech Connect

    Stone, A.T.

    1991-01-01

    We have completed a large number of experiments which examine the release of MnO{sub 2}-bound Co, Ni, and Cu. Our work has focused upon the following areas: (1) competitive adsorption among the three toxic metals and Mn(II); (2) toxic metal release upon addition of low MW organic reductants and complexants; and (3) toxic metal release upon addition of natural organic matter-rich surface waters and IHSS organic matter reference material.

  9. Metal-oxide-metal point contact junction detectors. [detection mechanism and mechanical stability

    NASA Technical Reports Server (NTRS)

    Baird, J.; Havemann, R. H.; Fults, R. D.

    1973-01-01

    The detection mechanism(s) and design of a mechanically stable metal-oxide-metal point contact junction detector are considered. A prototype for a mechanically stable device has been constructed and tested. A technique has been developed which accurately predicts microwave video detector and heterodyne mixer SIM (semiconductor-insulator-metal) diode performance from low dc frequency volt-ampere curves. The difference in contact potential between the two metals and geometrically induced rectification constitute the detection mechanisms.

  10. Quantization of Hall Resistance at the Metallic Interface between an Oxide Insulator and SrTiO_{3}.

    PubMed

    Trier, Felix; Prawiroatmodjo, Guenevere E D K; Zhong, Zhicheng; Christensen, Dennis Valbjørn; von Soosten, Merlin; Bhowmik, Arghya; Lastra, Juan Maria García; Chen, Yunzhong; Jespersen, Thomas Sand; Pryds, Nini

    2016-08-26

    The two-dimensional metal forming at the interface between an oxide insulator and SrTiO_{3} provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two dimensions, remains underexplored at these complex oxide heterointerfaces. Here, we report the experimental observation of quantized Hall resistance in a SrTiO_{3} heterointerface based on the modulation-doped amorphous-LaAlO_{3}/SrTiO_{3} heterostructure, which exhibits both high electron mobility exceeding 10,000  cm^{2}/V s and low carrier density on the order of ∼10^{12}  cm^{-2}. Along with unambiguous Shubnikov-de Haas oscillations, the spacing of the quantized Hall resistance suggests that the interface is comprised of a single quantum well with ten parallel conducting two-dimensional sub-bands. This provides new insight into the electronic structure of conducting oxide interfaces and represents an important step towards designing and understanding advanced oxide devices.

  11. Quantization of Hall Resistance at the Metallic Interface between an Oxide Insulator and SrTiO3

    NASA Astrophysics Data System (ADS)

    Trier, Felix; Prawiroatmodjo, Guenevere E. D. K.; Zhong, Zhicheng; Christensen, Dennis Valbjørn; von Soosten, Merlin; Bhowmik, Arghya; Lastra, Juan Maria García; Chen, Yunzhong; Jespersen, Thomas Sand; Pryds, Nini

    2016-08-01

    The two-dimensional metal forming at the interface between an oxide insulator and SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two dimensions, remains underexplored at these complex oxide heterointerfaces. Here, we report the experimental observation of quantized Hall resistance in a SrTiO3 heterointerface based on the modulation-doped amorphous-LaAlO3/SrTiO3 heterostructure, which exhibits both high electron mobility exceeding 10 ,000 cm2/V s and low carrier density on the order of ˜1 012 cm-2 . Along with unambiguous Shubnikov-de Haas oscillations, the spacing of the quantized Hall resistance suggests that the interface is comprised of a single quantum well with ten parallel conducting two-dimensional sub-bands. This provides new insight into the electronic structure of conducting oxide interfaces and represents an important step towards designing and understanding advanced oxide devices.

  12. Quantization of Hall Resistance at the Metallic Interface between an Oxide Insulator and SrTiO_{3}.

    PubMed

    Trier, Felix; Prawiroatmodjo, Guenevere E D K; Zhong, Zhicheng; Christensen, Dennis Valbjørn; von Soosten, Merlin; Bhowmik, Arghya; Lastra, Juan Maria García; Chen, Yunzhong; Jespersen, Thomas Sand; Pryds, Nini

    2016-08-26

    The two-dimensional metal forming at the interface between an oxide insulator and SrTiO_{3} provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two dimensions, remains underexplored at these complex oxide heterointerfaces. Here, we report the experimental observation of quantized Hall resistance in a SrTiO_{3} heterointerface based on the modulation-doped amorphous-LaAlO_{3}/SrTiO_{3} heterostructure, which exhibits both high electron mobility exceeding 10,000  cm^{2}/V s and low carrier density on the order of ∼10^{12}  cm^{-2}. Along with unambiguous Shubnikov-de Haas oscillations, the spacing of the quantized Hall resistance suggests that the interface is comprised of a single quantum well with ten parallel conducting two-dimensional sub-bands. This provides new insight into the electronic structure of conducting oxide interfaces and represents an important step towards designing and understanding advanced oxide devices. PMID:27610874

  13. Field-assisted nanopatterning of metals, metal oxides and metal salts.

    PubMed

    Liu, Jun-Fu; Miller, Glen P

    2009-02-01

    The tip-based nanofabrication method called field-assisted nanopatterning or FAN has now been extended to the transfer of metals, metal oxides and metal salts onto various receiving substrates including highly ordered pyrolytic graphite, passivated gold and indium-tin oxide. Standard atomic force microscope tips were first dip-coated using suspensions of inorganic compounds in solvent. The films prepared in this manner were non-uniform and contained inorganic nanoparticles. Tip-based nanopatterning on chosen substrates was conducted under high electric field conditions. The same tip was used for both nanofabrication and imaging. Arbitrary patterns were formed with dimensions that ranged from tens of microns to sub-20 nm and were controlled by tuning the tip bias during fabrication. Most tip-based nanopatterning techniques are limited in terms of the type of species that can be deposited and the type of substrates onto which the deposition occurs. With the successful deposition of inorganic species reported here, FAN is demonstrated to be a truly versatile tip-based nanofabrication technique that is useful for the deposition of a wide variety of both organic and inorganic species including small molecules, large molecules and polymers.

  14. Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics

    NASA Astrophysics Data System (ADS)

    Roberts, J. W.; Chalker, P. R.; Lee, K. B.; Houston, P. A.; Cho, S. J.; Thayne, I. G.; Guiney, I.; Wallis, D.; Humphreys, C. J.

    2016-02-01

    We report the modification and control of threshold voltage in enhancement and depletion mode AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors through the use of in-situ fluorine doping of atomic layer deposition Al2O3. Uniform distribution of F ions throughout the oxide thickness are achievable, with a doping level of up to 5.5 × 1019 cm-3 as quantified by secondary ion mass spectrometry. This fluorine doping level reduces capacitive hysteretic effects when exploited in GaN metal-oxide-semiconductor capacitors. The fluorine doping and forming gas anneal also induces an average positive threshold voltage shift of between 0.75 and 1.36 V in both enhancement mode and depletion mode GaN-based transistors compared with the undoped gate oxide via a reduction of positive fixed charge in the gate oxide from +4.67 × 1012 cm-2 to -6.60 × 1012 cm-2. The application of this process in GaN based power transistors advances the realisation of normally off, high power, high speed devices.

  15. Interactions of Hydrogen Isotopes and Oxides with Metal Tubes

    SciTech Connect

    Glen R. Longhurst

    2008-08-01

    Understanding and accounting for interaction of hydrogen isotopes and their oxides with metal surfaces is important for persons working with tritium systems. Reported data from several investigators have shown that the processes of oxidation, adsorption, absorption, and permeation are all coupled and interactive. A computer model has been developed for predicting the interaction of hydrogen isotopes and their corresponding oxides in a flowing carrier gas stream with the walls of a metallic tube, particularly at low hydrogen concentrations. An experiment has been constructed to validate the predictive model. Predictions from modeling lead to unexpected experiment results.

  16. Functional Metal Oxide Nanostructures: Their Synthesis, Characterization, and Energy Applications

    NASA Astrophysics Data System (ADS)

    Iyer, Aparna

    This research focuses on studying metal oxides (MnO 2, Co3O4, MgO, Y2O3) for various applications including water oxidation and photocatalytic oxidation, developing different synthesis methodologies, and presenting detailed characterization studies of these metal oxides. This research consists of three major parts. The first part is studying novel applications and developing a synthesis method for manganese oxide nanomaterials. Manganese oxide materials were studied for renewable energy applications by using them as catalysts for water oxidation reactions. In this study, various crystallographic forms of manganese oxides (amorphous, 2D layered, 1D 2 x 2 tunnel structures) were evaluated for water oxidation catalysis. Amorphous manganese oxides (AMO) were found to be catalytically active for chemical and photochemical water oxidation compared to cryptomelane type tunnel manganese oxides (2 x 2 tunnels; OMS2) or layered birnessite (OL-1) materials. Detailed characterization was done to establish a correlation between the properties of the manganese oxide materials and their catalytic activities in water oxidation. The gas phase photocatalytic oxidation of 2-propanol under visible light was studied using manganese oxide 2 x 2 tunnel structures (OMS-2) as catalysts (Chapter 3). The reaction is 100% selective to acetone. As suggested by the photocatalytic and characterization data, important factors for the design of active OMS-2 photocatalysts are synthesis methodology, morphology, mixed valency and the release of oxygen from the OMS-2 structure. Manganese oxide octahedral molecular sieves (2 x 2 tunnels; OMS-2) with self-assembled dense or hollow sphere morphologies were fabricated via a room temperature ultrasonic atomization assisted synthesis (Chapter 4). The properties and catalytic activities of these newly developed materials were compared with that of OMS-2 synthesized by conventional reflux route. These materials exhibit exceptionally high catalytic activities

  17. Aerosol chemical vapor deposition of metal oxide films

    DOEpatents

    Ott, K.C.; Kodas, T.T.

    1994-01-11

    A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said substrate.

  18. Controlled reactivity tuning of metal-functionalized vanadium oxide clusters.

    PubMed

    Kastner, Katharina; Forster, Johannes; Ida, Hiromichi; Newton, Graham N; Oshio, Hiroki; Streb, Carsten

    2015-05-18

    Controlling the assembly and functionalization of molecular metal oxides [Mx Oy ](n-) (M=Mo, W, V) allows the targeted design of functional molecular materials. While general methods exist that enable the predetermined functionalization of tungstates and molybdates, no such routes are available for molecular vanadium oxides. Controlled design of polyoxovanadates, however, would provide highly active materials for energy conversion, (photo-) catalysis, molecular magnetism, and materials science. To this end, a new approach has been developed that allows the reactivity tuning of vanadium oxide clusters by selective metal functionalization. Organic, hydrogen-bonding cations, for example, dimethylammonium are used as molecular placeholders to block metal binding sites within vanadate cluster shells. Stepwise replacement of the placeholder cations with reactive metal cations gives mono- and difunctionalized clusters. Initial reactivity studies illustrate the tunability of the magnetic, redox, and catalytic activity.

  19. Role of Oxidative Stress in Transformation Induced by Metal Mixture

    PubMed Central

    Martín, Silva-Aguilar; Emilio, Rojas; Mahara, Valverde

    2011-01-01

    Metals are ubiquitous pollutants present as mixtures. In particular, mixture of arsenic-cadmium-lead is among the leading toxic agents detected in the environment. These metals have carcinogenic and cell-transforming potential. In this study, we used a two step cell transformation model, to determine the role of oxidative stress in transformation induced by a mixture of arsenic-cadmium-lead. Oxidative damage and antioxidant response were determined. Metal mixture treatment induces the increase of damage markers and the antioxidant response. Loss of cell viability and increased transforming potential were observed during the promotion phase. This finding correlated significantly with generation of reactive oxygen species. Cotreatment with N-acetyl-cysteine induces effect on the transforming capacity; while a diminution was found in initiation, in promotion phase a total block of the transforming capacity was observed. Our results suggest that oxidative stress generated by metal mixture plays an important role only in promotion phase promoting transforming capacity. PMID:22191014

  20. Emerging Applications of Liquid Metals Featuring Surface Oxides

    PubMed Central

    2014-01-01

    Gallium and several of its alloys are liquid metals at or near room temperature. Gallium has low toxicity, essentially no vapor pressure, and a low viscosity. Despite these desirable properties, applications calling for liquid metal often use toxic mercury because gallium forms a thin oxide layer on its surface. The oxide interferes with electrochemical measurements, alters the physicochemical properties of the surface, and changes the fluid dynamic behavior of the metal in a way that has, until recently, been considered a nuisance. Here, we show that this solid oxide “skin” enables many new applications for liquid metals including soft electrodes and sensors, functional microcomponents for microfluidic devices, self-healing circuits, shape-reconfigurable conductors, and stretchable antennas, wires, and interconnects. PMID:25283244

  1. Two-Dimensional Porous Micro/Nano Metal Oxides Templated by Graphene Oxide.

    PubMed

    Cao, Hailiang; Zhou, Xufeng; Zheng, Chao; Liu, Zhaoping

    2015-06-10

    Novel two-dimensional (2D) porous metal oxides with micro-/nanoarchitecture have been successfully fabricated using graphene oxide (GO) as a typical sacrificial template. GO as a 2D template ensures that the growth and fusion of metal oxides nanoparticles is restricted in the 2D plane. A series of metal oxides (NiO, Fe2O3, Co3O4, Mn2O3, and NiFe2O4) with similar nanostructure were investigated using this simple method. Some of these special nanostructured materials, such as NiO, when being used as anode for lithium-ion batteries, can exhibit high specific capacity, good rate performance, and cycling stability. Importantly, this strategy of creating a 2D porous micro/nano architecture can be easily extended to controllably synthesize other binary/polynary metal oxides nanostructures for lithium-ion batteries or other applications.

  2. Nanostructured Metal Oxides for Stoichiometric Degradation of Chemical Warfare Agents.

    PubMed

    Štengl, Václav; Henych, Jiří; Janoš, Pavel; Skoumal, Miroslav

    2016-01-01

    Metal oxides have very important applications in many areas of chemistry, physics and materials science; their properties are dependent on the method of preparation, the morphology and texture. Nanostructured metal oxides can exhibit unique characteristics unlike those of the bulk form depending on their morphology, with a high density of edges, corners and defect surfaces. In recent years, methods have been developed for the preparation of metal oxide powders with tunable control of the primary particle size as well as of a secondary particle size: the size of agglomerates of crystallites. One of the many ways to take advantage of unique properties of nanostructured oxide materials is stoichiometric degradation of chemical warfare agents (CWAs) and volatile organic compounds (VOC) pollutants on their surfaces.

  3. Internal zone growth method for producing metal oxide metal eutectic composites

    DOEpatents

    Clark, Grady W.; Holder, John D.; Pasto, Arvid E.

    1980-01-01

    An improved method for preparing a cermet comprises preparing a compact having about 85 to 95 percent theoretical density from a mixture of metal and metal oxide powders from a system containing a eutectic composition, and inductively heating the compact in a radiofrequency field to cause the formation of an internal molten zone. The metal oxide particles in the powder mixture are effectively sized relative to the metal particles to permit direct inductive heating of the compact by radiofrequency from room temperature. Surface melting is prevented by external cooling or by effectively sizing the particles in the powder mixture.

  4. Metal oxide nanostructures and their gas sensing properties: a review.

    PubMed

    Sun, Yu-Feng; Liu, Shao-Bo; Meng, Fan-Li; Liu, Jin-Yun; Jin, Zhen; Kong, Ling-Tao; Liu, Jin-Huai

    2012-01-01

    Metal oxide gas sensors are predominant solid-state gas detecting devices for domestic, commercial and industrial applications, which have many advantages such as low cost, easy production, and compact size. However, the performance of such sensors is significantly influenced by the morphology and structure of sensing materials, resulting in a great obstacle for gas sensors based on bulk materials or dense films to achieve highly-sensitive properties. Lots of metal oxide nanostructures have been developed to improve the gas sensing properties such as sensitivity, selectivity, response speed, and so on. Here, we provide a brief overview of metal oxide nanostructures and their gas sensing properties from the aspects of particle size, morphology and doping. When the particle size of metal oxide is close to or less than double thickness of the space-charge layer, the sensitivity of the sensor will increase remarkably, which would be called "small size effect", yet small size of metal oxide nanoparticles will be compactly sintered together during the film coating process which is disadvantage for gas diffusion in them. In view of those reasons, nanostructures with many kinds of shapes such as porous nanotubes, porous nanospheres and so on have been investigated, that not only possessed large surface area and relatively mass reactive sites, but also formed relatively loose film structures which is an advantage for gas diffusion. Besides, doping is also an effective method to decrease particle size and improve gas sensing properties. Therefore, the gas sensing properties of metal oxide nanostructures assembled by nanoparticles are reviewed in this article. The effect of doping is also summarized and finally the perspectives of metal oxide gas sensor are given. PMID:22736968

  5. Metal oxide nanostructures and their gas sensing properties: a review.

    PubMed

    Sun, Yu-Feng; Liu, Shao-Bo; Meng, Fan-Li; Liu, Jin-Yun; Jin, Zhen; Kong, Ling-Tao; Liu, Jin-Huai

    2012-01-01

    Metal oxide gas sensors are predominant solid-state gas detecting devices for domestic, commercial and industrial applications, which have many advantages such as low cost, easy production, and compact size. However, the performance of such sensors is significantly influenced by the morphology and structure of sensing materials, resulting in a great obstacle for gas sensors based on bulk materials or dense films to achieve highly-sensitive properties. Lots of metal oxide nanostructures have been developed to improve the gas sensing properties such as sensitivity, selectivity, response speed, and so on. Here, we provide a brief overview of metal oxide nanostructures and their gas sensing properties from the aspects of particle size, morphology and doping. When the particle size of metal oxide is close to or less than double thickness of the space-charge layer, the sensitivity of the sensor will increase remarkably, which would be called "small size effect", yet small size of metal oxide nanoparticles will be compactly sintered together during the film coating process which is disadvantage for gas diffusion in them. In view of those reasons, nanostructures with many kinds of shapes such as porous nanotubes, porous nanospheres and so on have been investigated, that not only possessed large surface area and relatively mass reactive sites, but also formed relatively loose film structures which is an advantage for gas diffusion. Besides, doping is also an effective method to decrease particle size and improve gas sensing properties. Therefore, the gas sensing properties of metal oxide nanostructures assembled by nanoparticles are reviewed in this article. The effect of doping is also summarized and finally the perspectives of metal oxide gas sensor are given.

  6. Selective extraction of metals from mixed oxide matrixes using choline-based ionic liquids.

    PubMed

    Abbott, Andrew P; Capper, Glen; Davies, David L; Rasheed, Raymond K; Shikotra, Pragna

    2005-09-19

    The solubility of a range of metal oxides in a eutectic mixture of urea/choline chloride is quantified, and it is shown that the dissolved metals can be reclaimed from a mixed metal oxide matrix using electrodeposition. PMID:16156600

  7. Epitaxial 2D MoSe2 (HfSe2) Semiconductor/2D TaSe2 Metal van der Waals Heterostructures.

    PubMed

    Tsoutsou, Dimitra; Aretouli, Kleopatra E; Tsipas, Polychronis; Marquez-Velasco, Jose; Xenogiannopoulou, Evangelia; Kelaidis, Nikolaos; Aminalragia Giamini, Sigiava; Dimoulas, Athanasios

    2016-01-27

    Molecular beam epitaxy of 2D metal TaSe2/2D MoSe2 (HfSe2) semiconductor heterostructures on epi-AlN(0001)/Si(111) substrates is reported. Electron diffraction reveals an in-plane orientation indicative of van der Waals epitaxy, whereas electronic band imaging supported by first-principles calculations and X-ray photoelectron spectroscopy indicate the presence of a dominant trigonal prismatic 2H-TaSe2 phase and a minor contribution from octahedrally coordinated TaSe2, which is present in TaSe2/AlN and TaSe2/HfSe2/AlN but notably absent in the TaSe2/MoSe2/AlN, indicating superior structural quality of TaSe2 grown on MoSe2. Apart from its structural and chemical compatibility with the selenide semiconductors, TaSe2 has a workfunction of 5.5 eV as measured by ultraviolet photoelectron spectroscopy, which matches very well with the semiconductor workfunctions, implying that epi-TaSe2 can be used for low-resistivity contacts to MoSe2 and HfSe2. PMID:26727305

  8. Application of a mixed metal oxide catalyst to a metallic substrate

    NASA Technical Reports Server (NTRS)

    Sevener, Kathleen M. (Inventor); Lohner, Kevin A. (Inventor); Mays, Jeffrey A. (Inventor); Wisner, Daniel L. (Inventor)

    2009-01-01

    A method for applying a mixed metal oxide catalyst to a metallic substrate for the creation of a robust, high temperature catalyst system for use in decomposing propellants, particularly hydrogen peroxide propellants, for use in propulsion systems. The method begins by forming a prepared substrate material consisting of a metallic inner substrate and a bound layer of a noble metal intermediate. Alternatively, a bound ceramic coating, or frit, may be introduced between the metallic inner substrate and noble metal intermediate when the metallic substrate is oxidation resistant. A high-activity catalyst slurry is applied to the surface of the prepared substrate and dried to remove the organic solvent. The catalyst layer is then heat treated to bind the catalyst layer to the surface. The bound catalyst layer is then activated using an activation treatment and calcinations to form the high-activity catalyst system.

  9. Is Neurotoxicity of Metallic Nanoparticles the Cascades of Oxidative Stress?

    NASA Astrophysics Data System (ADS)

    Song, Bin; Zhang, YanLi; Liu, Jia; Feng, XiaoLi; Zhou, Ting; Shao, LongQuan

    2016-06-01

    With the rapid development of nanotechnology, metallic (metal or metal oxide) nanoparticles (NPs) are widely used in many fields such as cosmetics, the food and building industries, and bio-medical instruments. Widespread applications of metallic NP-based products increase the health risk associated with human exposures. Studies revealed that the brain, a critical organ that consumes substantial amounts of oxygen, is a primary target of metallic NPs once they are absorbed into the body. Oxidative stress (OS), apoptosis, and the inflammatory response are believed to be the main mechanisms underlying the neurotoxicity of metallic NPs. Other studies have disclosed that antioxidant pretreatment or co-treatment can reverse the neurotoxicity of metallic NPs by decreasing the level of reactive oxygen species, up-regulating the activities of antioxidant enzymes, decreasing the proportion of apoptotic cells, and suppressing the inflammatory response. These findings suggest that the neurotoxicity of metallic NPs might involve a cascade of events following NP-induced OS. However, additional research is needed to determine whether NP-induced OS plays a central role in the neurotoxicity of metallic NPs, to develop a comprehensive understanding of the correlations among neurotoxic mechanisms and to improve the bio-safety of metallic NP-based products.

  10. Is Neurotoxicity of Metallic Nanoparticles the Cascades of Oxidative Stress?

    PubMed

    Song, Bin; Zhang, YanLi; Liu, Jia; Feng, XiaoLi; Zhou, Ting; Shao, LongQuan

    2016-12-01

    With the rapid development of nanotechnology, metallic (metal or metal oxide) nanoparticles (NPs) are widely used in many fields such as cosmetics, the food and building industries, and bio-medical instruments. Widespread applications of metallic NP-based products increase the health risk associated with human exposures. Studies revealed that the brain, a critical organ that consumes substantial amounts of oxygen, is a primary target of metallic NPs once they are absorbed into the body. Oxidative stress (OS), apoptosis, and the inflammatory response are believed to be the main mechanisms underlying the neurotoxicity of metallic NPs. Other studies have disclosed that antioxidant pretreatment or co-treatment can reverse the neurotoxicity of metallic NPs by decreasing the level of reactive oxygen species, up-regulating the activities of antioxidant enzymes, decreasing the proportion of apoptotic cells, and suppressing the inflammatory response. These findings suggest that the neurotoxicity of metallic NPs might involve a cascade of events following NP-induced OS. However, additional research is needed to determine whether NP-induced OS plays a central role in the neurotoxicity of metallic NPs, to develop a comprehensive understanding of the correlations among neurotoxic mechanisms and to improve the bio-safety of metallic NP-based products. PMID:27295259

  11. In Situ Electrochemical Oxidation Tuning of Transition Metal Disulfides to Oxides for Enhanced Water Oxidation.

    PubMed

    Chen, Wei; Wang, Haotian; Li, Yuzhang; Liu, Yayuan; Sun, Jie; Lee, Sanghan; Lee, Jang-Soo; Cui, Yi

    2015-08-26

    The development of catalysts with earth-abundant elements for efficient oxygen evolution reactions is of paramount significance for clean and sustainable energy storage and conversion devices. Our group demonstrated recently that the electrochemical tuning of catalysts via lithium insertion and extraction has emerged as a powerful approach to improve catalytic activity. Here we report a novel in situ electrochemical oxidation tuning approach to develop a series of binary, ternary, and quaternary transition metal (e.g., Co, Ni, Fe) oxides from their corresponding sulfides as highly active catalysts for much enhanced water oxidation. The electrochemically tuned cobalt-nickel-iron oxides grown directly on the three-dimensional carbon fiber electrodes exhibit a low overpotential of 232 mV at current density of 10 mA cm(-2), small Tafel slope of 37.6 mV dec(-1), and exceptional long-term stability of electrolysis for over 100 h in 1 M KOH alkaline medium, superior to most non-noble oxygen evolution catalysts reported so far. The materials evolution associated with the electrochemical oxidation tuning is systematically investigated by various characterizations, manifesting that the improved activities are attributed to the significant grain size reduction and increase of surface area and electroactive sites. This work provides a promising strategy to develop electrocatalysts for large-scale water-splitting systems and many other applications. PMID:27162978

  12. In Situ Electrochemical Oxidation Tuning of Transition Metal Disulfides to Oxides for Enhanced Water Oxidation

    PubMed Central

    2015-01-01

    The development of catalysts with earth-abundant elements for efficient oxygen evolution reactions is of paramount significance for clean and sustainable energy storage and conversion devices. Our group demonstrated recently that the electrochemical tuning of catalysts via lithium insertion and extraction has emerged as a powerful approach to improve catalytic activity. Here we report a novel in situ electrochemical oxidation tuning approach to develop a series of binary, ternary, and quaternary transition metal (e.g., Co, Ni, Fe) oxides from their corresponding sulfides as highly active catalysts for much enhanced water oxidation. The electrochemically tuned cobalt–nickel–iron oxides grown directly on the three-dimensional carbon fiber electrodes exhibit a low overpotential of 232 mV at current density of 10 mA cm–2, small Tafel slope of 37.6 mV dec–1, and exceptional long-term stability of electrolysis for over 100 h in 1 M KOH alkaline medium, superior to most non-noble oxygen evolution catalysts reported so far. The materials evolution associated with the electrochemical oxidation tuning is systematically investigated by various characterizations, manifesting that the improved activities are attributed to the significant grain size reduction and increase of surface area and electroactive sites. This work provides a promising strategy to develop electrocatalysts for large-scale water-splitting systems and many other applications. PMID:27162978

  13. Surface x-ray diffraction of complex metal oxide surfaces and interfaces--a new era

    SciTech Connect

    Schlepuetz, C. M.; Willmott, P. R.; Pauli, S. A.; Herger, R.; Martoccia, D.; Bjoerck, M.; Kumah, D.; Clarke, R.; Yacoby, Y.

    2009-01-29

    The availability of high-brilliance hard x-ray synchrotron radiation and the advent of novel photon counting area detectors have brought surface x-ray diffraction (SXRD) into a new era. It is now possible to record large numbers of structure factors with much improved reliability within reasonable beamtime durations. As a result, structural determination of the surfaces and interfaces of complex crystallographic systems and heterostructures has now become feasible, especially in conjunction with phase-retrieval methods. It is thereby hoped that detailed structural information will shed light on the unusual physical properties of these systems. Complex metal oxide systems investigated at the Materials Science beamline of the Swiss Light Source, including the surface of SrTiO{sub 3}, the interface between LaAlO{sub 3} and SrTiO{sub 3}, and the structure of YBa{sub 2}Cu{sub 3}O{sub 7} grown on NdGaO{sub 3}, SrTiO{sub 3}, and (LaSr)(AlTa)O{sub 3} will be presented as examples of what is now possible using SXRD.

  14. Properties of ferroelectric/ferromagnetic thin film heterostructures

    SciTech Connect

    Chen, Daming; Harward, Ian; Linderman, Katie; Economou, Evangelos; Celinski, Zbigniew; Nie, Yan

    2014-05-07

    Ferroelectric/ferromagnetic thin film heterostructures, SrBi{sub 2}Ta{sub 2}O{sub 9}/BaFe{sub 12}O{sub 19} (SBT/BaM), were grown on platinum-coated Si substrates using metal-organic decomposition. X-ray diffraction patterns confirmed that the heterostructures contain only SBT and BaM phases. The microwave properties of these heterostructures were studied using a broadband ferromagnetic resonance (FMR) spectrometer from 35 to 60 GHz, which allowed us to determine gyromagnetic ratio and effective anisotropy field. The FMR linewidth is as low as140 Oe at 58 GHz. In addition, measurements of the effective permittivity of the heterostructures were carried out as a function of bias electric field. All heterostructures exhibit hysteretic behavior of the effective permittivity. These properties indicate that such heterostructures have potential for application in dual electric and magnetic field tunable resonators, filters, and phase shifters.

  15. Properties of ferroelectric/ferromagnetic thin film heterostructures

    NASA Astrophysics Data System (ADS)

    Chen, Daming; Harward, Ian; Linderman, Katie; Economou, Evangelos; Nie, Yan; Celinski, Zbigniew

    2014-05-01

    Ferroelectric/ferromagnetic thin film heterostructures, SrBi2Ta2O9/BaFe12O19 (SBT/BaM), were grown on platinum-coated Si substrates using metal-organic decomposition. X-ray diffraction patterns confirmed that the heterostructures contain only SBT and BaM phases. The microwave properties of these heterostructures were studied using a broadband ferromagnetic resonance (FMR) spectrometer from 35 to 60 GHz, which allowed us to determine gyromagnetic ratio and effective anisotropy field. The FMR linewidth is as low as140 Oe at 58 GHz. In addition, measurements of the effective permittivity of the heterostructures were carried out as a function of bias electric field. All heterostructures exhibit hysteretic behavior of the effective permittivity. These properties indicate that such heterostructures have potential for application in dual electric and magnetic field tunable resonators, filters, and phase shifters.

  16. Controlled confinement of half-metallic two-dimensional electron gas in BaTiO3/Ba2FeReO6 /BaTiO3 heterostructures: A first-principles study

    NASA Astrophysics Data System (ADS)

    Baidya, Santu; Waghmare, Umesh V.; Paramekanti, Arun; Saha-Dasgupta, Tanusri

    2015-10-01

    Using density functional theory calculations, we establish that the half-metallicity of bulk Ba2FeReO6 survives down to 1 nm thickness in BaTiO3/Ba2FeReO6 /BaTiO3 heterostructures grown along the (001) and (111) directions. The confinement of the two-dimensional (2D) electron gas in this quantum well structure arises from the suppressed hybridization between Re/Fe d states and unoccupied Ti d states, and it is further strengthened by polar fields for the (111) direction. This mechanism, distinct from the polar catastrophe, leads to an order of magnitude stronger confinement of the 2D electron gas than that at the LaAlO3/SrTiO3 interface. We further show low-energy bands of (111) heterostructure display nontrivial topological character. Our work opens up the possibility of realizing ultrathin spintronic devices.

  17. InAlN/InGaN/GaN double heterostructure with improved carrier confinement and high-temperature transport performance grown by metal-organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zhao, Yi; Shuai Xue, Jun; Zhang, Jin Cheng; Zhou, Xiao Wei; Chao Zhang, Ya; Hao, Yue

    2015-07-01

    A nearly lattice-matched InAlN/InGaN/GaN double heterostructure (DH) and traditional InAlN/GaN single heterostructure (SH) were grown by metal-organic chemical vapor deposition. The InN mole fraction of InGaN channel was deduced by XRD and photoluminescence. The electrical properties were characterized by capacitance-voltage and temperature-dependent Hall measurements. Both results revealed that the InAlN/InGaN/GaN DH possessed superior carrier confinement over traditional InAlN/GaN SH owing to the back barrier formed at the InGaN/GaN interface, which prevents the spilling over of carriers and thus remarkably improves the transport performance at high temperature. Furthermore, a thin InGaN layer was preferable for carrier channel applications to a thick one.

  18. Irreversible electrical manipulation of magnetization on BiFeO{sub 3}-based heterostructures

    SciTech Connect

    Xu, Qingyu E-mail: jdu@nju.edu.cn; Xu, Zhenyu; He, Maocheng; Du, Jun E-mail: jdu@nju.edu.cn; Cao, Yanqiang

    2015-05-07

    We prepared several heterostructures, Co/Bi{sub 0.90}La{sub 0.10}FeO{sub 3} on surface oxidized Si or (111) SrTiO{sub 3} and NiFe/Bi{sub 0.90}La{sub 0.10}FeO{sub 3} on (001) SrTiO{sub 3} substrates using LaNiO{sub 3} as bottom electrode. With different strategies of voltage application, the exchange bias field H{sub E} decreased with increasing voltage irreversibly for all the heterostructures at room temperature. The chemical state at the NiFe/Bi{sub 0.90}La{sub 0.10}FeO{sub 3} interface was studied by X-ray photoelectron spectroscopy before and after the electrical manipulation. The oxidization of the metallic ferromagnetic layer at interface after the electrical manipulation has been confirmed, which might explain the irreversibility.

  19. Ethanol oxidation on metal oxide-supported platinum catalysts

    SciTech Connect

    L. M. Petkovic 090468; Sergey N. Rashkeev; D. M. Ginosar

    2009-09-01

    Ethanol is a renewable fuel that can be used as an additive to gasoline (or its substitute) with the advantage of octane enhancement and reduced carbon monoxide exhaust emissions. However, on Ethanol is a renewable fuel that can be used as an additive to gasoline (or its substitute) with the advantage of octane enhancement and reduced carbon monoxide exhaust emissions. However, on the standard three-way catalysts, the conversion of unburned ethanol is low because both ethanol and some of its partially oxidized derivatives are highly resistant to oxidation. A combination of first-principles density-functional theory (DFT) based calculations and in-situ diffuse reflectance infrared spectroscopy (DRIFTS) analysis was applied to uncover some of the fundamental phenomena associated with ethanol oxidation on Pt containing catalysts. In particular, the objective was to analyze the role of the oxide (i.e., ?-Al2O3 or SiO2) substrate on the ethanol oxidation activity. The results showed that Pt nanoparticles trap and accumulate oxygen at their surface and perimeter sites and play the role of “stoves” that burn ethanol molecules and their partially oxidized derivatives to the “final” products. The ?-Al2O3 surfaces provided higher mobility of the fragments of ethanol molecules than the SiO2 surface and hence increased the supply rate of these objects to the Pt particles. This will in turn produce a higher conversion rate of unburned ethanol.and some of its partially oxidized derivatives are highly resistant to oxidation. A combination of first-principles density-functional theory (DFT) based calculations and in-situ diffuse reflectance infrared spectroscopy (DRIFTS) analysis was applied to uncover some of the fundamental phenomena associated with ethanol oxidation on Pt containing catalysts. In particular, the objective was to analyze the role of the oxide (i.e., ?-Al2O3 or SiO2) substrate on the ethanol oxidation activity. The results showed that Pt nanoparticles

  20. Synthesis of Nanoporous Metals, Oxides, Carbides, and Sulfides: Beyond Nanocasting.

    PubMed

    Luc, Wesley; Jiao, Feng

    2016-07-19

    Nanoporous metal-based solids are of particular interest because they combine a large quantity of surface metal sites, interconnected porous networks, and nanosized crystalline walls, thus exhibiting unique physical and chemical properties compared to other nanostructures and bulk counterparts. Among all of the synthetic approaches, nanocasting has proven to be a highly effective method for the syntheses of metal oxides with three-dimensionally ordered porous structures and crystalline walls. A typical procedure involves a thermal annealing process of a porous silica template filled with an inorganic precursor (often a metal nitrate salt), which converts the precursor into a desired phase within the silica pores. The final step is the selective removal of the silica template in either a strong base or a hydrofluoric acid solution. In the past decade, nanocasting has become a popular synthetic approach and has enabled the syntheses of a variety of nanoporous metal oxides. However, there is still a lack of synthetic methods to fabricate nanoporous materials beyond simple metal oxides. Therefore, the development of new synthetic strategies beyond nanocasting has become an important direction. This Account describes new progress in the preparation of novel nanoporous metal-based solids for heterogeneous catalysis. The discussion begins with a method called dealloying, an effective method to synthesize nanoporous metals. The starting material is a metallic alloy containing two or more elements followed by a selective chemical or electrochemical leaching process that removes one of the preferential elements, resulting in a highly porous structure. Nanoporous metals, such as Cu, Ag, and CuTi, exhibit remarkable electrocatalytic properties in carbon dioxide reduction, oxygen reduction, and hydrogen evolution reactions. In addition, the syntheses of metal oxides with hierarchical porous structures are also discussed. On the basis of the choice of hard template, nanoporous

  1. Formation of metallic and metal hydrous oxide dispersions

    NASA Technical Reports Server (NTRS)

    Matijevic, E.; Sapieszko, R. S.

    1979-01-01

    The formation, via hydrothermally induced precipitation from homogeneous solution, of a variety of well-defined dispersions of metallic and hydrous metal in the conditions under which the particles are produced (e.g., pH and composition of the growth medium, aging temperature, rate of heating, or degree of agitation) can be readily discerned by following changes in the mass, composition, and morphology of the final solid phase. The generation of colloidal dispersions in the absence of gravity convection or sedimentation effects may result in the appearance of morphological modifications not previously observed in terrestrially formed hydrosols.

  2. Metal-decorated graphene oxide for ammonia adsorption

    NASA Astrophysics Data System (ADS)

    Li, Yunguo; Pathak, Biswarup; Nisar, Jawad; Qian, Zhao; Ahuja, Rajeev

    2013-07-01

    Based on the first-principles density functional theory, we have studied the stability, electronic structure and ammonia storage capacity of metal-decorated graphene oxide (GO). Metal atoms (Mg and Li) are bonded strongly to the epoxy oxygen atoms on the surface of the GO sheet, which can act as high-surface-area adsorbent for the ammonia uptake and release. Each metal atom can bind several ammonia molecules around itself with a reasonable binding energy. We find metal-decorated GO can store up to tens of moles of ammonia per kilogram, which is far better than the recently reported excellent ammonia adsorption by GO.

  3. Methods of making metal oxide nanostructures and methods of controlling morphology of same

    DOEpatents

    Wong, Stanislaus S; Hongjun, Zhou

    2012-11-27

    The present invention includes a method of producing a crystalline metal oxide nanostructure. The method comprises providing a metal salt solution and providing a basic solution; placing a porous membrane between the metal salt solution and the basic solution, wherein metal cations of the metal salt solution and hydroxide ions of the basic solution react, thereby producing a crystalline metal oxide nanostructure.

  4. Are metallothioneins equally good biomarkers of metal and oxidative stress?

    PubMed

    Figueira, Etelvina; Branco, Diana; Antunes, Sara C; Gonçalves, Fernando; Freitas, Rosa

    2012-10-01

    Several researchers investigated the induction of metallothioneins (MTs) in the presence of metals, namely Cadmium (Cd). Fewer studies observed the induction of MTs due to oxidizing agents, and literature comparing the sensitivity of MTs to different stressors is even more scarce or even nonexistent. The role of MTs in metal and oxidative stress and thus their use as a stress biomarker, remains to be clearly elucidated. To better understand the role of MTs as a biomarker in Cerastoderma edule, a bivalve widely used as bioindicator, a laboratory assay was conducted aiming to assess the sensitivity of MTs to metal and oxidative stressors. For this purpose, Cd was used to induce metal stress, whereas hydrogen peroxide (H2O2), being an oxidizing compound, was used to impose oxidative stress. Results showed that induction of MTs occurred at very different levels in metal and oxidative stress. In the presence of the oxidizing agent (H2O2), MTs only increased significantly when the degree of oxidative stress was very high, and mortality rates were higher than 50 percent. On the contrary, C. edule survived to all Cd concentrations used and significant MTs increases, compared to the control, were observed in all Cd exposures. The present work also revealed that the number of ions and the metal bound to MTs varied with the exposure conditions. In the absence of disturbance, MTs bound most (60-70 percent) of the essential metals (Zn and Cu) in solution. In stressful situations, such as the exposure to Cd and H2O2, MTs did not bind to Cu and bound less to Zn. When organisms were exposed to Cd, the total number of ions bound per MT molecule did not change, compared to control. However the sort of ions bound per MT molecule differed; part of the Zn and all Cu ions where displaced by Cd ions. For organisms exposed to H2O2, each MT molecule bound less than half of the ions compared to control and Cd conditions, which indicates a partial oxidation of thiol groups in the cysteine

  5. Are metallothioneins equally good biomarkers of metal and oxidative stress?

    PubMed

    Figueira, Etelvina; Branco, Diana; Antunes, Sara C; Gonçalves, Fernando; Freitas, Rosa

    2012-10-01

    Several researchers investigated the induction of metallothioneins (MTs) in the presence of metals, namely Cadmium (Cd). Fewer studies observed the induction of MTs due to oxidizing agents, and literature comparing the sensitivity of MTs to different stressors is even more scarce or even nonexistent. The role of MTs in metal and oxidative stress and thus their use as a stress biomarker, remains to be clearly elucidated. To better understand the role of MTs as a biomarker in Cerastoderma edule, a bivalve widely used as bioindicator, a laboratory assay was conducted aiming to assess the sensitivity of MTs to metal and oxidative stressors. For this purpose, Cd was used to induce metal stress, whereas hydrogen peroxide (H2O2), being an oxidizing compound, was used to impose oxidative stress. Results showed that induction of MTs occurred at very different levels in metal and oxidative stress. In the presence of the oxidizing agent (H2O2), MTs only increased significantly when the degree of oxidative stress was very high, and mortality rates were higher than 50 percent. On the contrary, C. edule survived to all Cd concentrations used and significant MTs increases, compared to the control, were observed in all Cd exposures. The present work also revealed that the number of ions and the metal bound to MTs varied with the exposure conditions. In the absence of disturbance, MTs bound most (60-70 percent) of the essential metals (Zn and Cu) in solution. In stressful situations, such as the exposure to Cd and H2O2, MTs did not bind to Cu and bound less to Zn. When organisms were exposed to Cd, the total number of ions bound per MT molecule did not change, compared to control. However the sort of ions bound per MT molecule differed; part of the Zn and all Cu ions where displaced by Cd ions. For organisms exposed to H2O2, each MT molecule bound less than half of the ions compared to control and Cd conditions, which indicates a partial oxidation of thiol groups in the cysteine

  6. Metal-Catalyzed Oxidation and Photo-oxidation of Glucagon.

    PubMed

    Zhang, Jian

    2016-08-01

    The oxidation of glucagon by the H2O2/Cu(2+) system and by simulated sunlight was studied using HPLC-MS methodologies. It was found that copper ion-catalyzed oxidation is much faster in the residue 1-12 region than in photo-oxidation, but it is slower than photo-oxidation in the residue 18-29 region. This difference is due to the unique feature of the primary sequence of glucagon. The residue 1-12 region contains His-1 and Asp-9 that can bind to Cu(2+) ions and catalyze the oxidation of His-1 and Tyr-10, while the residue 18-29 region lacks these charged residues near the liable Met-27 and Trp-25 and hence no catalysis by the neighboring groups occurs. Fragment (residue 13-17) was more stable than the other regions of the peptide toward photo-oxidation because it contains only one oxidizable residue, Tyr-13. These findings may help explain the mechanism of action of glucagon and provide some hints for the development of effective anti-diabetic drug molecules and stable glucagon formulations.

  7. Metal-Catalyzed Oxidation and Photo-oxidation of Glucagon.

    PubMed

    Zhang, Jian

    2016-08-01

    The oxidation of glucagon by the H2O2/Cu(2+) system and by simulated sunlight was studied using HPLC-MS methodologies. It was found that copper ion-catalyzed oxidation is much faster in the residue 1-12 region than in photo-oxidation, but it is slower than photo-oxidation in the residue 18-29 region. This difference is due to the unique feature of the primary sequence of glucagon. The residue 1-12 region contains His-1 and Asp-9 that can bind to Cu(2+) ions and catalyze the oxidation of His-1 and Tyr-10, while the residue 18-29 region lacks these charged residues near the liable Met-27 and Trp-25 and hence no catalysis by the neighboring groups occurs. Fragment (residue 13-17) was more stable than the other regions of the peptide toward photo-oxidation because it contains only one oxidizable residue, Tyr-13. These findings may help explain the mechanism of action of glucagon and provide some hints for the development of effective anti-diabetic drug molecules and stable glucagon formulations. PMID:27435200

  8. Deposition of Metal Oxide Films from Metal-EDTA Complexes by Flame Spray Technique

    NASA Astrophysics Data System (ADS)

    Komatsu, Keiji; Sekiya, Tetsuo; Toyama, Ayumu; Hasebe, Yasuhiro; Nakamura, Atsushi; Noguchi, Masahiro; Li, Yu; Ohshio, Shigeo; Akasaka, Hiroki; Muramatsu, Hiroyuki; Saitoh, Hidetoshi

    2014-06-01

    R2O3 (R = Y, Eu, Er) metal oxides were synthesized from metal-ethylenediaminetetraacetic acid (EDTA) complexes using a flame spray technique. As this technique enables high deposition rates, films with thickness of several tens of micrometers were obtained. Films of yttria, europia, and erbia phase were synthesized on stainless-steel substrates with reaction assistance by H2-O2 combustion gas. The oxide films consisted of the desired crystalline phase with micropores. The porosity of the films was in the range of 6-15%, varying with the metal used. These results suggest that the true density of the metal oxide obtained from metal-EDTA powder through the thermal reaction process plays an important role in achieving film with the desired porosity.

  9. Asymmetric organic/metal(oxide) hybrid nanoparticles: synthesis and applications

    NASA Astrophysics Data System (ADS)

    He, Jie; Liu, Yijing; Hood, Taylor C.; Zhang, Peng; Gong, Jinlong; Nie, Zhihong

    2013-05-01

    Asymmetric particles (APs) with broken centrosymmetry are of great interest, due to the asymmetric surface properties and diverse functionalities. In particular, organic/metal(oxide) APs naturally combine the significantly different and complementary properties of organic and inorganic species, leading to their unique applications in various fields. In this review article, we highlighted recent advances in the synthesis and applications of organic/metal(oxide) APs. This type of APs is grounded on chemical or physical interactions between metal(oxide) NPs and organic small molecular or polymeric ligands. The synthetic methodologies were summarized in three categories, including the selective surface modifications, phase separation of mixed ligands on the surface of metal(oxide) NPs, and direct synthesis of APs. We further discussed the unique applications of organic/metal(oxide) APs in self-assembly, sensors, catalysis, and biomedicine, as a result of the distinctions between asymmetrically distributed organic and inorganic components. Finally, challenges and future directions are discussed in an outlook section.

  10. Asymmetric organic/metal(oxide) hybrid nanoparticles: synthesis and applications.

    PubMed

    He, Jie; Liu, Yijing; Hood, Taylor C; Zhang, Peng; Gong, Jinlong; Nie, Zhihong

    2013-06-21

    Asymmetric particles (APs) with broken centrosymmetry are of great interest, due to the asymmetric surface properties and diverse functionalities. In particular, organic/metal(oxide) APs naturally combine the significantly different and complementary properties of organic and inorganic species, leading to their unique applications in various fields. In this review article, we highlighted recent advances in the synthesis and applications of organic/metal(oxide) APs. This type of APs is grounded on chemical or physical interactions between metal(oxide) NPs and organic small molecular or polymeric ligands. The synthetic methodologies were summarized in three categories, including the selective surface modifications, phase separation of mixed ligands on the surface of metal(oxide) NPs, and direct synthesis of APs. We further discussed the unique applications of organic/metal(oxide) APs in self-assembly, sensors, catalysis, and biomedicine, as a result of the distinctions between asymmetrically distributed organic and inorganic components. Finally, challenges and future directions are discussed in an outlook section.

  11. Green nanochemistry: metal oxide nanoparticles and porous thin films from bare metal powders.

    PubMed

    Redel, Engelbert; Petrov, Srebri; Dag, Omer; Moir, Jonathon; Huai, Chen; Mirtchev, Peter; Ozin, Geoffrey A

    2012-01-01

    A universal, simple, robust, widely applicable and cost-effective aqueous process is described for a controlled oxidative dissolution process of micrometer-sized metal powders to form high-purity aqueous dispersions of colloidally stable 3-8 nm metal oxide nanoparticles. Their utilization for making single and multilayer optically transparent high-surface-area nanoporous films is demonstrated. This facile synthesis is anticipated to find numerous applications in materials science, engineering, and nanomedicine.

  12. Nanoporous metal oxides with tunable and nanocrystalline frameworks via conversion of metal-organic frameworks.

    PubMed

    Kim, Tae Kyung; Lee, Kyung Joo; Cheon, Jae Yeong; Lee, Jae Hwa; Joo, Sang Hoon; Moon, Hoi Ri

    2013-06-19

    Nanoporous metal oxide materials are ubiquitous in the material sciences because of their numerous potential applications in various areas, including adsorption, catalysis, energy conversion and storage, optoelectronics, and drug delivery. While synthetic strategies for the preparation of siliceous nanoporous materials are well-established, nonsiliceous metal oxide-based nanoporous materials still present challenges. Herein, we report a novel synthetic strategy that exploits a metal-organic framework (MOF)-driven, self-templated route toward nanoporous metal oxides via thermolysis under inert atmosphere. In this approach, an aliphatic ligand-based MOF is thermally converted to nanoporous metal oxides with highly nanocrystalline frameworks, in which aliphatic ligands act as the self-templates that are afterward evaporated to generate nanopores. We demonstrate this concept with hierarchically nanoporous magnesia (MgO) and ceria (CeO2), which have potential applicability for adsorption, catalysis, and energy storage. The pore size of these nanoporous metal oxides can be readily tuned by simple control of experimental parameters. Significantly, nanoporous MgO exhibits exceptional CO2 adsorption capacity (9.2 wt %) under conditions mimicking flue gas. This MOF-driven strategy can be expanded to other nanoporous monometallic and multimetallic oxides with a multitude of potential applications.

  13. Superior carrier confinement in InAlN/InGaN/AlGaN double heterostructures grown by metal-organic chemical vapor deposition

    SciTech Connect

    Zhao, Yi Xue, JunShuai; Zhang, JinCheng Hao, Yue

    2014-12-01

    InAlN/InGaN/AlGaN double heterostructures were grown and characterized. Temperature-dependent Hall measurements show that the two-dimensional electron gas has a steady density over the entire temperature range tested and a superior transport property compared with the traditional InAlN/GaN single heterostructure at elevated temperatures. The improved performance was attributed to the back barrier, which enhanced the carrier confinement and prevented electrons from spilling into the buffer. In addition, the room-temperature electron mobility of the double heterostructure was 1293 cm{sup 2}/Vs, which is the highest reported for an InGaN-channel heterostructure.

  14. Advances in metal-induced oxidative stress and human disease.

    PubMed

    Jomova, Klaudia; Valko, Marian

    2011-05-10

    Detailed studies in the past two decades have shown that redox active metals like iron (Fe), copper (Cu), chromium (Cr), cobalt (Co) and other metals undergo redox cycling reactions and possess the ability to produce reactive radicals such as superoxide anion radical and nitric oxide in biological systems. Disruption of metal ion homeostasis may lead to oxidative stress, a state where increased formation of reactive oxygen species (ROS) overwhelms body antioxidant protection and subsequently induces DNA damage, lipid peroxidation, protein modification and other effects, all symptomatic for numerous diseases, involving cancer, cardiovascular disease, diabetes, atherosclerosis, neurological disorders (Alzheimer's disease, Parkinson's disease), chronic inflammation and others. The underlying mechanism of action for all these metals involves formation of the superoxide radical, hydroxyl radical (mainly via Fenton reaction) and other ROS, finally producing mutagenic and carcinogenic malondialdehyde (MDA), 4-hydroxynonenal (HNE) and other exocyclic DNA adducts. On the other hand, the redox inactive metals, such as cadmium (Cd), arsenic (As) and lead (Pb) show their toxic effects via bonding to sulphydryl groups of proteins and depletion of glutathione. Interestingly, for arsenic an alternative mechanism of action based on the formation of hydrogen peroxide under physiological conditions has been proposed. A special position among metals is occupied by the redox inert metal zinc (Zn). Zn is an essential component of numerous proteins involved in the defense against oxidative stress. It has been shown, that depletion of Zn may enhance DNA damage via impairments of DNA repair mechanisms. In addition, Zn has an impact on the immune system and possesses neuroprotective properties. The mechanism of metal-induced formation of free radicals is tightly influenced by the action of cellular antioxidants. Many low-molecular weight antioxidants (ascorbic acid (vitamin C), alpha

  15. CO-oxidation catalysts: Low-temperature CO oxidation over Noble-Metal Reducible Oxide (NMRO) catalysts

    NASA Technical Reports Server (NTRS)

    Herz, Richard K.

    1990-01-01

    Oxidation of CO to CO2 is an important reaction technologically and environmentally and a complex and interesting reaction scientifically. In most cases, the reaction is carried out in order to remove CO as an environmental hazard. A major application of heterogeneous catalysts is catalytic oxidation of CO in the exhaust of combustion devices. The reaction over catalysts in exhaust gas is fast and often mass-transfer-limited since exhaust gases are hot and O2/CO ratios are high. The main challenges to catalyst designers are to control thermal sintering and chemical poisoning of the active materials. The effect of the noble metal on the oxide is discussed, followed by the effect of the oxide on the noble metal, the interaction of the noble metal and oxide to form unique catalytic sites, and the possible ways in which the CO oxidation reaction is catalyzed by the NMRO materials.

  16. Quantitative EELS analysis of zirconium alloy metal/oxide interfaces.

    PubMed

    Ni, Na; Lozano-Perez, Sergio; Sykes, John; Grovenor, Chris

    2011-01-01

    Zirconium alloys have been long used for fuel cladding and other structural components in water-cooled nuclear reactors, but waterside corrosion is a primary limitation on both high fuel burn-up and extended fuel cycle operation. Understanding the processes that occur at the metal/oxide interface is crucial for a full mechanistic description of the oxidation process. In this paper we show that reliable quantification of the oxygen content at the metal/oxide interface can be obtained by Electron Energy Loss Spectrometry (EELS) if enough care is taken over both the preparation of Transmission Electron Microscopy (TEM) samples and the methodology for quantification of the EELS data. We have reviewed the accuracy of theoretically calculated inelastic partial scattering cross-sections and effective inelastic mean-free-paths for oxygen and zirconium in oxidized Zr-alloy samples. After careful recalibration against a ZrO₂ powder standard, systematic differences in the local oxygen profile across the interface in different zirconium alloys were found. The presence of a sub-stoichiometric oxide layer (a suboxide) was detected under conditions of slow oxide growth but not where growth was more rapid. This difference could arise from the different corrosion resistances of the alloys or, more likely, as a result of the transition in oxidation behaviour, which refers to a sharp increase in the oxidation rate when the oxide is a few microns thick.

  17. Geochemical effects on metals following permanganate oxidation of DNAPLs.

    PubMed

    Crimi, Michelle L; Siegrist, Robert L

    2003-01-01

    The application of in situ chemical oxidation for dense, nonaqueous phase liquid (DNAPL) remediation requires delivery of substantial levels of oxidant chemicals into the subsurface to degrade target DNAPLs and to satisfy natural oxidant demand. This practice can raise questions regarding changes in subsurface conditions, yet information regarding potential effects, especially at the field scale, has been lacking. This paper describes an evaluation of the effects on metals associated with in situ chemical oxidation using potassium permanganate at Launch Complex 34 (LC34), Cape Canaveral Air Station, Florida. At LC34, high concentrations of permanganate (1 to 2 wt%) were injected into the subsurface as part of a demonstration of DNAPL remediation technologies. In a companion experimental effort at the Colorado School of Mines, field samples were characterized and laboratory batch and mini-column studies were completed to assess effects of permanganate oxidation on metals in the subsurface one year after completion of the field demonstration. Results indicated there was potential for long-term immobilization of a portion of introduced manganese and no treatment-induced loss in subsurface permeability due to deposition of manganese oxides particles, which are a product of the oxidation reactions. Permanganate treatment did cause elevated manganese, chromium, and nickel concentrations in site ground water within the treated region. Some of these metals effects can be attenuated during downgradient flow through uncontaminated and untreated aquifer sediments.

  18. Ion exchange properties of novel hydrous metal oxide materials

    SciTech Connect

    Gardner, T.J.; McLaughlin, L.I.

    1996-12-31

    Hydrous metal oxide (HMO) materials are inorganic ion exchangers which have many desirable characteristics for catalyst support applications, including high cation exchange capacity, anion exchange capability, high surface area, ease of adjustment of acidity and basicity, bulk or thin film preparation, and similar chemistry for preparation of various transition metal oxides. Cation exchange capacity is engineered into these materials through the uniform incorporation of alkali cations via manipulation of alkoxide chemistry. Specific examples of the effects of Na stoichiometry and the addition of SiO{sub 2} to hydrous titanium oxide (HTO) on ion exchange behavior will be given. Acid titration and cationic metal precursor complex exchange will be used to characterize the ion exchange behavior of these novel materials.

  19. Electronic structures of two-dimensional metallic oxides and bronzes

    NASA Astrophysics Data System (ADS)

    Guyot, H.; Motta, N.; Marcus, J.; Drouard, S.; Balaska, B.

    2001-06-01

    The electronic structures of some molybdenum and tungsten oxides or bronzes exhibiting Peierls transitions are investigated at room temperature. The detection of a weak conduction band, well separated from a large valence band, evidences the metallic character of each oxide. The distributions of the valences of the different transition metals are analyzed by XPS. In each oxide, the presence of atleast two contributive components to the main core levels reveals a mixed valence state of the transition metal. But the proportions of the different components do not reflect the distribution of the cationic valences, as expected from the crystallographic structures. To understand this disagreement, we suggest that two alternative ways, including or rejecting a screening effect generated by the conduction electrons contribute to the photoemission processes and alter the real distribution of the cationic charges.

  20. Engineering metal oxide structures for efficient photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Concina, Isabella; Selopal, Gurpreet S.; Milan, Riccardo; Vomiero, Alberto; Sberveglieri, Giorgio

    2014-03-01

    Metal oxide-based photoanodes are critical components of dye sensitized solar cells (DSSCs), which are photoelectrochemical cells for the conversion of solar energy, promising to have several benefits as compared with their traditional counterparts. A careful engineering of the wide band gap metal oxide composing the photoanode, as well as their process design, is strategic for improving device performances and for planning a near future production scale up, especially devoted to reducing the environmental impact of the device fabrication. Herein, we present the application of ZnO hierarchical structures as efficient materials to be applied as photoanodes in DSSC, in the perspective of looking for alternative to TiO2 nanoparticles, currently the most exploited metal oxide in these devices.

  1. Utilization of Metal Oxides and Chalcogenides Stabilized in Organic Solvents

    NASA Astrophysics Data System (ADS)

    Lampert, Lester; Flaig, Robby; Camacho, Jorge; Hamilton, James

    2011-03-01

    Metal oxides and metal chalcogenides are important materials for a variety of applications including photocatalysis for decomposition of water, conductive and optical coatings, catalysts, photovoltaics, pryoelectrics, self-cleaning surfaces, pigments, and high efficiency Li-insertion materials in batteries among many other applications. Fundamental discoveries of surprising solubility of insoluble materials such as single and multi-walled carbon nanotubes and graphene has lead us to discover that certain metal oxides and metal chalcogenides such as TiO2 are soluble in certain solvents. Due to the industrial importance of TiO2, discovering stable pure solvent systems demonstrates a possibility to avoid surface modification of TiO2 nanoparticles by use materials such as of (3-methacryloxypropyl)-trimethoxysilane and various other methods of artificial stabilization. We have created thin films of TiO2, transparent ultraviolet (UV) --absorptive polymers, and Li-ion battery anodes with graphene-TiO2 hybrid materials.

  2. The oxidation mechanism of metallic mercury in vitro by catalase.

    PubMed

    Ogata, M; Aikoh, H

    1983-01-01

    Magos et al reported the effect of 3-amino-1,2,4-triazole on mercury uptake by in vitro human blood samples and the mercury contents in blood and brain of rats exposed to metallic mercury vapor. The authors described the oxidation of metallic mercury by human blood cells having different catalase activities, hypocatalasemia and acatalasemia, with or without hydrogen peroxide. Kudsk found that ethyl alcohol inhibited the uptake of metallic mercury by blood in vitro and in vivo. These findings raise a question as to whether or not the inhibition by ethyl alcohol of the uptake of mercury by the blood is due to a direct reaction between ethyl alcohol and the catalase-hydrogen peroxide complex. The present report deals with the mechanism of metallic mercury oxidation in vitro by catalase using ethyl alcohol. PMID:6647575

  3. OXIDATION BEHAVIOR OF WELDED AND BASE METAL UNS N06025

    SciTech Connect

    Pint, Bruce A; Paul, Larry D.

    2007-01-01

    The oxidation behavior of specimens containing tungsten inert gas welds of UNS N06025 (NiCrFeAlY) was investigated in air for up to 5,000h at 900 -1000 C and 1,000h at 1100 -1200 C. In general, the microstructure was very homogeneous in the weld with smaller carbides and the Al2O3 penetrations were similar or smaller compared to those formed in the base metal. Above 1000 C, significant spallation was observed and Al and Cr depletion in the metal was observed to a similar extent in the weld and base metal. The maximum internal oxidation depth of the base metal at 900 and 1100 C was lower than several other commercial Ni-base alloys.

  4. Promoting Photochemical Water Oxidation with Metallic Band Structures.

    PubMed

    Liu, Hongfei; Moré, René; Grundmann, Henrik; Cui, Chunhua; Erni, Rolf; Patzke, Greta R

    2016-02-10

    The development of economic water oxidation catalysts is a key step toward large-scale water splitting. However, their current exploration remains empirical to a large extent. Elucidating the correlations between electronic properties and catalytic activity is crucial for deriving general and straightforward catalyst design principles. Herein, strongly correlated electronic systems with abundant and easily tunable electronic properties, namely La(1-x)Sr(x)BO3 perovskites and La(2-x)Sr(x)BO4 layered perovskites (B = Fe, Co, Ni, or Mn), were employed as model systems to identify favorable electronic structures for water oxidation. We established a direct correlation between the enhancement of catalytic activity and the insulator to metal transition through tuning the electronic properties of the target perovskite families via the La(3+)/Sr(2+) ratio. Their improved photochemical water oxidation performance was clearly linked to the increasingly metallic character. These electronic structure-activity relations provide a promising guideline for constructing efficient water oxidation catalysts.

  5. Enhanced arsenic removal using mixed metal oxide impregnated chitosan beads.

    PubMed

    Yamani, Jamila S; Miller, Sarah M; Spaulding, Matthew L; Zimmerman, Julie B

    2012-09-15

    Mixed metal oxide impregnated chitosan beads (MICB) containing nanocrystalline Al₂O₃ and nanocrystalline TiO₂ were successfully developed. This adsorbent exploits the high capacity of Al₂O₃ for arsenate and the photocatalytic activity of TiO₂ to oxidize arsenite to arsenate, resulting in a removal capacity higher than that of either metal oxide alone. The composition of the beads was optimized for maximum arsenite removal in the presence of UV light. The mechanism of removal was investigated and a mode of action was proposed wherein TiO₂ oxidizes arsenite to arsenate which is then removed from solution by Al₂O₃. Pseudo-second order kinetics were used to validate the proposed mechanism. MICB is a more efficient and effective adsorbent for arsenic than TiO₂-impregnated chitosan beads (TICB), previously reported on, yet maintains a desirable life cycle, free of complex synthesis processes, toxic materials, and energy inputs. PMID:22743162

  6. The Strength of the Metal. Aluminum Oxide Interface

    NASA Technical Reports Server (NTRS)

    Pepper, S. V.

    1984-01-01

    The strength of the interface between metals and aluminum oxide is an important factor in the successful operation of devices found throughout modern technology. One finds the interface in machine tools, jet engines, and microelectronic integrated circuits. The strength of the interface, however, should be strong or weak depending on the application. The diverse technological demands have led to some general ideas concerning the origin of the interfacial strength, and have stimulated fundamental research on the problem. Present status of our understanding of the source of the strength of the metal - aluminum oxide interface in terms of interatomic bonds are reviewed. Some future directions for research are suggested.

  7. Criteria for safe storage of plutonium metals and oxides

    SciTech Connect

    Not Available

    1994-12-01

    This standard establishes safety criteria for safe storage of plutonium metals and plutonium oxides at DOE facilities; materials packaged to meet these criteria should not need subsequent repackaging to ensure safe storage for at least 50 years or until final disposition. The standard applied to Pu metals, selected alloys (eg., Ga and Al alloys), and stabilized oxides containing at least 50 wt % Pu; it does not apply to Pu-bearing liquids, process residues, waste, sealed weapon components, or material containing more than 3 wt % {sup 238}Pu. Requirements for a Pu storage facility and safeguards and security considerations are not stressed as they are addressed in detail by other DOE orders.

  8. Method for continuous synthesis of metal oxide powders

    SciTech Connect

    Berry, David A.; Haynes, Daniel J.; Shekhawat, Dushyant; Smith, Mark W.

    2015-09-08

    A method for the rapid and continuous production of crystalline mixed-metal oxides from a precursor solution comprised of a polymerizing agent, chelated metal ions, and a solvent. The method discharges solution droplets of less than 500 .mu.m diameter using an atomizing or spray-type process into a reactor having multiple temperature zones. Rapid evaporation occurs in a first zone, followed by mixed-metal organic foam formation in a second zone, followed by amorphous and partially crystalline oxide precursor formation in a third zone, followed by formation of the substantially crystalline mixed-metal oxide in a fourth zone. The method operates in a continuous rather than batch manner and the use of small droplets as the starting material for the temperature-based process allows relatively high temperature processing. In a particular embodiment, the first zone operates at 100-300.degree. C., the second zone operates at 300-700.degree. C., and the third operates at 700-1000.degree. C., and fourth zone operates at at least 700.degree. C. The resulting crystalline mixed-metal oxides display a high degree of crystallinity and sphericity with typical diameters on the order of 50 .mu.m or less.

  9. Pb(II) distributions at biofilm-metal oxide interfaces.

    PubMed

    Templeton, A S; Trainor, T P; Traina, S J; Spormann, A M; Brown, G E

    2001-10-01

    The distribution of aqueous Pb(II) sorbed at the interface between Burkholderia cepacia biofilms and hematite (alpha-Fe(2)O(3)) or corundum (alpha-Al(2)O(3)) surfaces has been probed by using an application of the long-period x-ray standing wave technique. Attached bacteria and adsorbed organic matter may interfere with sorption processes on metal oxide surfaces by changing the characteristics of the electrical double layer at the solid-solution interface, blocking surface sites, or providing a variety of new sites for metal binding. In this work, Pb L(alpha) fluorescence yield profiles for samples equilibrated with 10(-7) to 10(-3.8) M Pb(II) were measured and modeled to determine quantitatively the partitioning of Pb(II) at the biofilm-metal oxide interface. Our data show that the reactive sites on the metal oxide surfaces were not passivated by the formation of a monolayer biofilm. Instead, high-energy surface sites on the metal oxides form the dominant sink for Pb(II) at submicromolar concentrations, following the trend alpha-Fe(2)O(3) (0001) > alpha-Al(2)O(3) (1102) > alpha-Al(2)O(3) (0001), despite the greater site density within the overlying biofilms. At [Pb] > 10(-6) M, significant Pb uptake by the biofilms was observed.

  10. Metal current collect protected by oxide film

    DOEpatents

    Jacobson, Craig P.; Visco, Steven J.; DeJonghe, Lutgard C.

    2004-05-25

    Provided are low-cost, mechanically strong, highly electronically conductive current collects and associated structures for solid-state electrochemical devices, techniques for forming these structures, and devices incorporating the structures. The invention provides solid state electrochemical devices having as current interconnects a ferritic steel felt or screen coated with a protective oxide film.

  11. Sonochemical water splitting in the presence of powdered metal oxides.

    PubMed

    Morosini, Vincent; Chave, Tony; Virot, Matthieu; Moisy, Philippe; Nikitenko, Sergey I

    2016-03-01

    Kinetics of hydrogen formation was explored as a new chemical dosimeter allowing probing the sonochemical activity of argon-saturated water in the presence of micro- and nano-sized metal oxide particles exhibiting catalytic properties (ThO2, ZrO2, and TiO2). It was shown that the conventional sonochemical dosimeter based on H2O2 formation is hardly applicable in such systems due to catalytic degradation of H2O2 at oxide surface. The study of H2 generation revealed that at low-frequency ultrasound (20 kHz) the sonochemical water splitting is greatly improved for all studied metal oxides. The highest efficiency is observed for relatively large micrometric particles of ThO2 which is assigned to ultrasonically-driven particle fragmentation accompanied by mechanochemical water molecule splitting. The nanosized metal oxides do not exhibit particle size reduction under ultrasonic treatment but nevertheless yield higher quantities of H2. The enhancement of sonochemical water splitting in this case is most probably resulting from better bubble nucleation in heterogeneous systems. At high-frequency ultrasound (362 kHz), the effect of metal oxide particles results in a combination of nucleation and ultrasound attenuation. In contrast to 20 kHz, micrometric particles slowdown the sonolysis of water at 362 kHz due to stronger attenuation of ultrasonic waves while smaller particles show a relatively weak and various directional effects.

  12. CATALYTIC OXIDATION OF DIMETHYL SULFIDE WITH OZONE: EFFECT OF PROMOTER AND PHYSICO-CHEMICAL PROPERTIES OF METAL OXIDE CATALYSTS

    EPA Science Inventory

    This study reports improved catalytic activities and stabilities for the oxidation of dimethyl sulfide (DMS), a major pollutant of pulp and paper mills. Ozone was used as an oxidant and Cu, Mo, V, Cr and Mn metal oxides, and mixed metal oxides support on y-alumina as catalysts ov...

  13. Atomic Layer Deposition of Metal Oxide Thin Films on Metallic Substrates

    NASA Astrophysics Data System (ADS)

    Foroughi Abari, Ali

    Atomic layer deposition (ALD) is a powerful ultra-thin film deposition technique that uses sequential self-limiting surface reactions to provide conformal atomic scale film growth. Deposition of ALD films on many substrate systems has been studied before; however, limited data is available on deposition on metallic surfaces. The investigation of the growth of Al 2O3, HfO2, and ZrO2 as three technologically important metal oxides on metallic substrates is the subject of this thesis. Al2O3, HfO2, and ZrO2 films were grown by ALD on silicon, as a well-studied substrate, in different operating conditions to investigate the effect of process parameters on film properties. To study the growth of oxides on metals, thin metallic substrates were prepared by sputter deposition on silicon wafers and then were transferred to the ALD chamber where the film growth was monitored by in-situ spectroscopic ellipsometry. The transfer was performed via a load lock system without breaking the vacuum to preserve the pristine metal surface. Formation of a thin interfacial layer of metal oxide was observed during the initial moments of plasma enhanced ALD, that was due to the exposure of metal surface to oxygen plasma. In-situ spectroscopic ellipsometry was used to accurately measure the thickness change of the growing films including the interfacial layer. The thickness of this interfacial oxide layer depended on various process parameters including deposition temperature, order of precursors and plasma pulse length. The interfacial oxide layer was absent during the conventional thermal ALD. However, thermal ALD of oxides on metals exhibited substrate-inhibited growth, especially at higher deposition temperatures. With the knowledge of ALD growth characteristics on metals, metal-insulator-metal (MIM) devices were fabricated by both thermal and plasma enhanced ALD and electrically characterized. The presence of the interfacial oxide layer altered the device performance by changing the

  14. Effects of AlN interlayer on the transport properties of nearly lattice-matched InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Xue, JunShuai; Zhang, JinCheng; Zhang, Wei; Li, Liang; Meng, FanNa; Lu, Ming; Ning, Jing; Hao, Yue

    2012-03-01

    The effects of AlN interlayer thickness on the transport properties of nearly lattice-matched InAlN/GaN heterostructures grown on sapphire substrates by pulsed metal organic chemical vapor deposition have been studied in detail. A very high electron mobility of approximately 1425 cm2/V s at room temperature and 5308 cm2/V s at 77 K together with a two dimensional electron gas (2DEG) density of 1.75×1013 cm-2 were obtained for nearly lattice-matched InAlN/GaN heterostructures with an optimum ˜1.2 nm thick AlN interlayer. For comparison, InAlN/GaN heterostructure without AlN interlayer exhibited a 2DEG density of 1.61×1013 cm-2 with low electron mobility of 949 and 2032 cm2/V s at room temperature and 77 K, respectively. This significant enhancement of electron mobility is mainly attributed to an optimized AlN interlayer, which provides a smooth interface between InAlN barrier layer and GaN buffer layer and hence remarkably reduces the alloy disorder scattering by suppressing carrier penetration from the GaN channel into the InAlN barrier layer. Simultaneously, a best surface morphology with a root mean square roughness value of 0.24 nm is obtained with the optimized AlN interlayer.

  15. Effects of Growth Temperature on Structural and Electrical Properties of InAlN/GaN Heterostructures Grown by Pulsed Metal Organic Chemical Vapor Deposition on c-Plane Sapphire

    NASA Astrophysics Data System (ADS)

    Xue, JunShuai; Zhang, JinCheng; Hao, Yue

    2013-08-01

    The authors report the effects of growth temperature on the structural and electrical properties of InAlN/GaN heterostructures, which were grown on c-plane sapphire substrates by pulsed metal organic chemical vapor deposition (PMOCVD). High resolution X-ray diffraction (HRXRD) and atomic force microscopy (AFM) measurements indicate that the quality of InAlN barrier is strongly dependent on the growth temperature. It is observed that the indium composition and surface root-mean-square (rms) roughness value of InAlN barrier decrease with increasing the growth temperature, and a nearly lattice-matched InAlN/GaN heterostructure with a smooth surface is obtained at 710 °C. As a consequence, the variation of structural properties of InAlN barrier influences the electrical properties of InAlN/GaN heterostructures, and high electron mobility in excess of 1400 cm2 V-1 s-1 is achieved at an optimized growth temperature window of InAlN barrier layer between 710 and 730 °C.

  16. Optical properties of transition metal oxide quantum wells

    NASA Astrophysics Data System (ADS)

    Demkov, Alexander; Choi, Miri; Butcher, Matthew; Rodriguez, Cesar; He, Qian; Posadas, Agham; Borisevich, Albina; Zollner, Stefan; Lin, Chungwei; Ortmann, Elliott

    2015-03-01

    We report on the investigation of SrTiO3/LaAlO3 quantum wells (QWs) grown by molecular beam epitaxy (MBE) on LaAlO3 substrate. Structures with different QW thicknesses ranging from two to ten unit cells were grown and characterized using x-ray photoemission spectroscopy, reflection high-energy electron diffraction (RHEED), scanning transmission electron microscopy (STEM). Optical properties (complex dielectric function) were measured by spectroscopic ellipsometry (SE) in the range of 1.0 eV to 6.0 eV at room temperature. We observed that the absorption edge was blue-shifted by approximately 0.39 eV as the STO quantum well thickness was reduced to two unit cells (uc). Density functional theory and tight-binding are used to model the optical response of these heterostructures. Our results demonstrate that the energy level of the first sub-band can be controlled by the QW thickness in a complex oxide material. We acknowledge support from Air Force Office of Scientific Research (FA9550-12-10494).

  17. Galvanic Exchange in Colloidal Metal/Metal-Oxide Core/Shell Nanocrystals

    PubMed Central

    2016-01-01

    While galvanic exchange is commonly applied to metallic nanoparticles, recently its applicability was expanded to metal-oxides. Here the galvanic exchange is studied in metal/metal-oxide core/shell nanocrystals. In particular Sn/SnO2 is treated by Ag+, Pt2+, Pt4+, and Pd2+. The conversion dynamics is monitored by in situ synchrotron X-ray diffraction. The Ag+ treatment converts the Sn cores to the intermetallic AgxSn (x ∼ 4) phase, by changing the core’s crystal structure. For the analogous treatment by Pt2+, Pt4+, and Pd2+, such a galvanic exchange is not observed. This different behavior is caused by the semipermeability of the naturally formed SnO2 shell, which allows diffusion of Ag+ but protects the nanocrystal cores from oxidation by Pt and Pd ions.

  18. Galvanic Exchange in Colloidal Metal/Metal-Oxide Core/Shell Nanocrystals

    PubMed Central

    2016-01-01

    While galvanic exchange is commonly applied to metallic nanoparticles, recently its applicability was expanded to metal-oxides. Here the galvanic exchange is studied in metal/metal-oxide core/shell nanocrystals. In particular Sn/SnO2 is treated by Ag+, Pt2+, Pt4+, and Pd2+. The conversion dynamics is monitored by in situ synchrotron X-ray diffraction. The Ag+ treatment converts the Sn cores to the intermetallic AgxSn (x ∼ 4) phase, by changing the core’s crystal structure. For the analogous treatment by Pt2+, Pt4+, and Pd2+, such a galvanic exchange is not observed. This different behavior is caused by the semipermeability of the naturally formed SnO2 shell, which allows diffusion of Ag+ but protects the nanocrystal cores from oxidation by Pt and Pd ions. PMID:27635186

  19. A Green Strategy to Prepare Metal Oxide Superstructure from Metal-Organic Frameworks

    PubMed Central

    Song, Yonghai; Li, Xia; Wei, Changting; Fu, Jinying; Xu, Fugang; Tan, Hongliang; Tang, Juan; Wang, Li

    2015-01-01

    Metal or metal oxides with diverse superstructures have become one of the most promising functional materials in sensor, catalysis, energy conversion, etc. In this work, a novel metal-organic frameworks (MOFs)-directed method to prepare metal or metal oxide superstructure was proposed. In this strategy, nodes (metal ions) in MOFs as precursors to form ordered building blocks which are spatially separated by organic linkers were transformed into metal oxide micro/nanostructure by a green method. Two kinds of Cu-MOFs which could reciprocally transform by changing solvent were prepared as a model to test the method. Two kinds of novel CuO with three-dimensional (3D) urchin-like and 3D rods-like superstructures composed of nanoparticles, nanowires and nanosheets were both obtained by immersing the corresponding Cu-MOFs into a NaOH solution. Based on the as-formed CuO superstructures, a novel and sensitive nonenzymatic glucose sensor was developed. The small size, hierarchical superstructures and large surface area of the resulted CuO superstructures eventually contribute to good electrocatalytic activity of the prepared sensor towards the oxidation of glucose. The proposed method of hierarchical superstructures preparation is simple, efficient, cheap and easy to mass production, which is obviously superior to pyrolysis. It might open up a new way for hierarchical superstructures preparation. PMID:25669731

  20. Modifying the catalytic and adsorption properties of metals and oxides

    NASA Astrophysics Data System (ADS)

    Yagodovskii, V. D.

    2015-11-01

    A new approach to interpreting the effect of promoters (inhibitors) of nonmetals and metals added to a host metal (catalyst) is considered. Theoretical calculations are based on a model of an actual two-dimensional electron gas and adsorbate particles. An equation is derived for the isotherm of induced adsorption on metals and semiconductors with respect to small fillings of θ ~ 0.1-0.15. The applicability of this equation is verified experimentally for metals (Ag, Pd, Cu, Fe, and Ni), graphitized ash, and semiconductor oxides Ta2O5, ZnO, and Ni. The applicability of the theoretical model of promotion is verified by the hydrogenation reaction of CO on ultradispersed nickel powder. The use of plasmachemical surface treatments of metals and oxides, accompanied by an increase in activity and variation in selectivity, are investigated based on the dehydrocyclization reactions of n-hexane and the dehydrogenation and dehydration of alcohols. It is established that such treatments for metals (Pt, Cu, Ni, and Co) raise their activity due to the growth of the number of active centers upon an increase in the activation energy. Applying XPES and XRD methods to metallic catalysts, it is shown that the rise in activity is associated with a change in their surface states (variation in the structural characteristics of metal particles and localization of certain forms of carbon in catalytically active centers). It is shown that plasmachemical treatments also alter their surface composition, surface activity, and raise their activity when used with complex phosphate oxides of the NASICON type. It is shown by the example of conversion of butanol-2 that abrupt variations in selectivity (prevalence of dehydration over dehydrogenation and vice versa) occur, depending on the type of plasma. It is concluded that plasmachemical treatments of metals and ZnO and NiO alter the isosteric heats and entropies of adsorption of isopropanol.

  1. Materials Design and Molecular-Beam Epitaxy of Half-Metallic Zinc-Blende CrAs and the Heterostructures

    NASA Astrophysics Data System (ADS)

    Akinaga, Hiro; Mizuguchi, Masaki; Nagao, Kazutaka; Miura, Yoshio; Shirai, Masafumi

    Zinc-blende half-metallic ferromagnets are promising materials in order to open up a new world of semiconductor spintronics. We design a new class of half-metallic ferromagnets, the zinc-blende transition-metal mono-pnictides, using ab-initio calculations based on the density-functional theory. The calculations show that the total-energy difference between the ferromagnetic and the antiferromagnetic states for the zinc-blende CrAs is the largest among all the studied compounds and the highly spin-polarized electronic band structure is almost unaffected from the spin-orbit interaction.We further study the properties of zinc-blende CrAs/GaAs multilayers theoretically and show that they keep a high spin polarization. Experimental realization of the previously nonexistent zinc-blende CrAs thin film has been achieved by molecular-beam epitaxy. The crystallographic analysis is presented together with the magnetic properties of the epitaxial film. The morphological structure and the magnetic properties change sensitively depending on the substrate temperature during the growth. The room-temperature saturation magnetization of the film grown under optimum conditions reaches about 3 μB per formula unit, which agrees with the theoretically predicted value and reflects the half-metallic behavior. The epitaxial growth of multilayers consisting of 2-4 monolayers of CrAs and 2-4 monolayers GaAs with atomically flat surfaces and interfacess is demonstrated.

  2. Container Prevents Oxidation Of Metal Powder

    NASA Technical Reports Server (NTRS)

    Woodford, William H.; Power, Christopher A.; Mckechnie, Timothy N.; Burns, David H.

    1992-01-01

    Sealed high-vacuum container holds metal powder required free of contamination by oxygen from point of manufacture to point of use at vacuum-plasma-spraying machine. Container protects powder from air during filling, storage, and loading of spraying machine. Eliminates unnecessary handling and transfer of powder from one container to another. Stainless-steel container sits on powder feeder of vacuum-plasma-spraying machine.

  3. All-alkoxide synthesis of strontium-containing metal oxides

    DOEpatents

    Boyle, Timothy J.

    2001-01-01

    A method for making strontium-containing metal-oxide ceramic thin films from a precursor liquid by mixing a strontium neo-pentoxide dissolved in an amine solvent and at least one metal alkoxide dissolved in a solvent, said at least one metal alkoxide selected from the group consisting of alkoxides of calcium, barium, bismuth, cadmium, lead, titanium, tantalum, hafnium, tungsten, niobium, zirconium, yttrium, lanthanum, antimony, chromium and thallium, depositing a thin film of the precursor liquid on a substrate, and heating the thin film in the presence of oxygen at between 550 and 700.degree. C.

  4. A novel microstructured metal-supported solid oxide fuel cell

    NASA Astrophysics Data System (ADS)

    Fernández-González, R.; Hernández, E.; Savvin, S.; Núñez, P.; Makradi, A.; Sabaté, N.; Esquivel, J. P.; Ruiz-Morales, J. C.

    2014-12-01

    An innovative design, alternative to the conventional metal supported fuel cells (MSC) is proposed. This new design of Solid Oxide Fuel Cell (SOFC), comprises a 200 μm layer of a honeycomb-metallic framework with hexagonal cells which supports a 250 μm layer of electrolyte. Each hexagonal cell is further functionalized with a thin 5-10 μm of Ni-YSZ anode. This new design allows a reduction of ∼65% of the metallic supporting material, rendering performances over 300 mW cm-2 under pure hydrogen at 850 °C, with an OCV of ∼1.1 V.

  5. Laboratory SIP signatures associated with oxidation of disseminated metal sulfides

    NASA Astrophysics Data System (ADS)

    Placencia-Gómez, Edmundo; Slater, Lee; Ntarlagiannis, Dimitrios; Binley, Andrew

    2013-05-01

    Oxidation of metal sulfide minerals is responsible for the generation of acidic waters rich in sulfate and metals. When associated with the oxidation of sulfide ore mine waste deposits the resulting pore water is called acid mine drainage (AMD); AMD is a known environmental problem that affects surface and ground waters. Characterization of oxidation processes in-situ is challenging, particularly at the field scale. Geophysical techniques, spectral induced polarization (SIP) in particular, may provide a means of such investigation. We performed laboratory experiments to assess the sensitivity of the SIP method to the oxidation mechanisms of common sulfide minerals found in mine waste deposits, i.e., pyrite and pyrrhotite, when the primary oxidant agent is dissolved oxygen. We found that SIP parameters, e.g., phase shift, the imaginary component of electrical conductivity and total chargeability, decrease as the time of exposure to oxidation and oxidation degree increase. This observation suggests that dissolution-depletion of the mineral surface reduces the capacitive properties and polarizability of the sulfide minerals. However, small increases in the phase shift and imaginary conductivity do occur during oxidation. These transient increases appear to correlate with increases of soluble oxidizing products, e.g., Fe2 + and Fe3 + in solution; precipitation of secondary minerals and the formation of a passivating layer to oxidation coating the mineral surface may also contribute to these increases. In contrast, the real component of electrical conductivity associated with electrolytic, electronic and interfacial conductance is sensitive to changes in the pore fluid chemistry as a result of the soluble oxidation products released (Fe2 + and Fe3 +), particularly for the case of pyrrhotite minerals.

  6. Dependence of GaAs-AlxGa1 - xAs heterostructures on Al composition for metal-semiconductor field-effect transistor operation

    NASA Astrophysics Data System (ADS)

    Hiruma, Kenji; Mori, Mitsuhiro; Kakibayashi, Hiroji; Ihara, Ayako; Takahashi, Susumu; Yanokura, Eiji

    1989-08-01

    High-quality GaAs-AlxGa1-xAs heterostructures for metal-semiconductor field-effect transistor (MESFET) applications have been grown by metalorganic vapor-phase epitaxy. High electron Hall mobility of up to 4000 cm2/(V s) for a carrier concentration of 3.5×1017 cm-3 was obtained for Si-doped GaAs grown on AlxGa1-xAs. It was learned that the electron Hall mobility of GaAs is not dependent on the Al composition of the AlxGa1-xAs buffer layer for 0≤x≤0.8. Good drain current-voltage saturation characteristics were observed for GaAs MESFETs with a 0.3-μm gate length and AlxGa1-xAs buffer layers. At drain voltages below 3 V, the drain conductance was at its lowest for Al composition around x=0.6. However, an anomalous peak in the drain conductance was observed at drain voltages of 3-6 V and at Al compositions of x=0.6 and 0.8. Drain conductance also increased as x did for x≥0.45 when measured at a microwave frequency. These phenomena can be understood by considering electron injection into the buffer/substrate region from the GaAs channel. The amount of this injection coincided well with the reduction in the conduction-band energy barrier at the GaAs-AlxGa1-xAs heterointerface for x>0.45 for electron transport.

  7. Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

    DOEpatents

    Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

    2010-07-13

    Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

  8. Direct chemical reduction of neptunium oxide to neptunium metal using calcium and calcium chloride

    NASA Astrophysics Data System (ADS)

    Squires, Leah N.; Lessing, Paul

    2016-04-01

    A process of direct reduction of neptunium oxide to neptunium metal using calcium metal as the reducing agent is discussed. After reduction of the oxide to metal, the metal is separated by density from the other components of the reaction mixture and can be easily removed upon cooling. The direct reduction technique consistently produces high purity (98%-99% pure) neptunium metal.

  9. Oxidation kinetics of reaction products formed in uranium metal corrosion.

    SciTech Connect

    Totemeier, T. C.

    1998-04-22

    The oxidation behavior of uranium metal ZPPR fuel corrosion products in environments of Ar-4%O{sub 2} and Ar-20%O{sub 2} were studied using thermo-gravimetric analysis (TGA). These tests were performed to extend earlier work in this area specifically, to assess plate-to-plate variations in corrosion product properties and the effect of oxygen concentration on oxidation behavior. The corrosion products from two relatively severely corroded plates were similar, while the products from a relatively intact plate were not reactive. Oxygen concentration strongly affected the burning rate of reactive products, but had little effect on low-temperature oxidation rates.

  10. Lithium metal oxide electrodes for lithium cells and batteries

    DOEpatents

    Thackeray, Michael M.; Johnson, Christopher S.; Amine, Khalil; Kim, Jaekook

    2006-11-14

    A lithium metal oxide positive electrode for a non-aqueous lithium cell is disclosed. The cell is prepared in its initial discharged state and has a general formula xLiMO.sub.2.(1-x)Li.sub.2M'O.sub.3 in which 0oxidation state and with at least one ion being Ni, and where M' is one or more ions with an average tetravalent oxidation state. Complete cells or batteries are disclosed with anode, cathode and electrolyte as are batteries of several cells connected in parallel or series or both.

  11. Carbon monoxide oxidation over three different states of copper: Development of a model metal oxide catalyst

    SciTech Connect

    Jernigan, G G

    1994-10-01

    Carbon monoxide oxidation was performed over the three different oxidation states of copper -- metallic (Cu), copper (I) oxide (Cu{sub 2}O), and copper (II) oxide (CuO) as a test case for developing a model metal oxide catalyst amenable to study by the methods of modern surface science and catalysis. Copper was deposited and oxidized on oxidized supports of aluminum, silicon, molybdenum, tantalum, stainless steel, and iron as well as on graphite. The catalytic activity was found to decrease with increasing oxidation state (Cu > Cu{sub 2}O > CuO) and the activation energy increased with increasing oxidation state (Cu, 9 kcal/mol < Cu{sub 2}O, 14 kcal/mol < CuO, 17 kcal/mol). Reaction mechanisms were determined for the different oxidation states. Lastly, NO reduction by CO was studied. A Cu and CuO catalyst were exposed to an equal mixture of CO and NO at 300--350 C to observe the production of N{sub 2} and CO{sub 2}. At the end of each reaction, the catalyst was found to be Cu{sub 2}O. There is a need to study the kinetics of this reaction over the different oxidation states of copper.

  12. Porous metal oxide microspheres from ion exchange resin

    NASA Astrophysics Data System (ADS)

    Picart, S.; Parant, P.; Caisso, M.; Remy, E.; Mokhtari, H.; Jobelin, I.; Bayle, J. P.; Martin, C. L.; Blanchart, P.; Ayral, A.; Delahaye, T.

    2015-07-01

    This study is devoted to the synthesis and the characterization of porous metal oxide microsphere from metal loaded ion exchange resin. Their application concerns the fabrication of uranium-americium oxide pellets using the powder-free process called Calcined Resin Microsphere Pelletization (CRMP). Those mixed oxide ceramics are one of the materials envisaged for americium transmutation in sodium fast neutron reactors. The advantage of such microsphere precursor compared to classical oxide powder is the diminution of the risk of fine dissemination which can be critical for the handling of highly radioactive powders such as americium based oxides and the improvement of flowability for the filling of compaction chamber. Those millimetric oxide microspheres incorporating uranium and americium were synthesized and characterizations showed a very porous microstructure very brittle in nature which occurred to be adapted to shaping by compaction. Studies allowed to determine an optimal heat treatment with calcination temperature comprised between 700-800 °C and temperature rate lower than 2 °C/min. Oxide Precursors were die-pressed into pellets and then sintered under air to form regular ceramic pellets of 95% of theoretical density (TD) and of homogeneous microstructure. This study validated thus the scientific feasibility of the CRMP process to prepare bearing americium target in a powder free manner.

  13. Metal-accelerated oxidation in plant cell death

    SciTech Connect

    Czuba, M. )

    1993-05-01

    Cadmium and mercury toxicity is further enhanced by external oxidizing conditions O[sub 3] or inherent plant processes. Lepidium sativum L, Lycopersicon esculentum Mill., or Phaseolus vulgaris L, were grown inpeat-lite to maturity under continuous cadmium exposure followed by one oxidant (O[sub 3]-6 hr. 30 pphm) exposure, with or without foliar calcium pretreatments. In comparison, Daucus carota, L and other species grown in a 71-V suspension, with or without 2,4-D were exposed continuously to low levels of methylmercury during exponential growth and analyzed in aggregates of distinct populations. Proteins were extracted and analyzed. Mechanisms of toxicity and eventual cell death are Ca-mediated and involve chloroplast, stomatal-water relations and changes in oxidant-anti-oxidant components in cells. Whether the metal-accelerated oxidative damage proceeds to cell death, depends on the species and its differential biotransformation system and cell association component.

  14. High-temperature Complementary Metal Oxide Semiconductors (CMOS)

    NASA Technical Reports Server (NTRS)

    Mcbrayer, J. D.

    1981-01-01

    The results of an investigation into the possibility of using complementary metal oxide semiconductor (CMOS) technology for high temperature electronics are presented. A CMOS test chip was specifically developed as the test bed. This test chip incorporates CMOS transistors that have no gate protection diodes; these diodes are the major cause of leakage in commercial devices.

  15. OXIDATION-RESISTANT COATING ON ARTICLES OF YTTRIUM METAL

    DOEpatents

    Wilder, D.R.; Wirkus, C.D.

    1963-11-01

    A process for protecting yttrium metal from oxidation by applying thereto and firing thereon a liquid suspension of a fritted ground silicate or phosphate glass plus from 5 to 35% by weight of CeO/sub 2/ is presented. (AEC)

  16. Metal oxide charge transport material doped with organic molecules

    DOEpatents

    Forrest, Stephen R.; Lassiter, Brian E.

    2016-08-30

    Doping metal oxide charge transport material with an organic molecule lowers electrical resistance while maintaining transparency and thus is optimal for use as charge transport materials in various organic optoelectronic devices such as organic photovoltaic devices and organic light emitting devices.

  17. Control of cerium oxidation state through metal complex secondary structures

    DOE PAGESBeta

    Levin, Jessica R.; Dorfner, Walter L.; Carroll, Patrick J.; Schelter, Eric J.

    2015-08-11

    A series of alkali metal cerium diphenylhydrazido complexes, Mx(py)y[Ce(PhNNPh)4], M = Li, Na, and K, x = 4 (Li and Na) or 5 (K), and y = 4 (Li), 8 (Na), or 7 (K), were synthesized to probe how a secondary coordination sphere would modulate electronic structures at a cerium cation. The resulting electronic structures of the heterobimetallic cerium diphenylhydrazido complexes were found to be strongly dependent on the identity of the alkali metal cations. When M = Li+ or Na+, the cerium(III) starting material was oxidized with concomitant reduction of 1,2-diphenylhydrazine to aniline. Reduction of 1,2-diphenylhydrazine was not observedmore » when M = K+, and the complex remained in the cerium(III) oxidation state. Oxidation of the cerium(III) diphenylhydrazido complex to the Ce(IV) diphenylhydrazido one was achieved through a simple cation exchange reaction of the alkali metals. As a result, UV-Vis spectroscopy, FTIR spectroscopy, electrochemistry, magnetic susceptibility, and DFT studies were used to probe the oxidation state and the electronic changes that occurred at the metal centre.« less

  18. Metal complexes of substituted Gable porphyrins as oxidation catalysts

    DOEpatents

    Lyons, James E.; Ellis, Jr., Paul E.; Wagner, Richard W.

    1996-01-01

    Transition metal complexes of Gable porphyrins having two porphyrin rings connected through a linking group, and having on the porphyrin rings electron-withdrawing groups, such as halogen, nitro or cyano. These complexes are useful as catalysts for the oxidation of organic compounds, e.g. alkanes.

  19. Metal complexes of substituted Gable porphyrins as oxidation catalysts

    DOEpatents

    Lyons, J.E.; Ellis, P.E. Jr.; Wagner, R.W.

    1996-01-02

    Transition metal complexes of Gable porphyrins are disclosed having two porphyrin rings connected through a linking group, and having on the porphyrin rings electron-withdrawing groups, such as halogen, nitro or cyano. These complexes are useful as catalysts for the oxidation of organic compounds, e.g. alkanes.

  20. CMOS array design automation techniques. [metal oxide semiconductors

    NASA Technical Reports Server (NTRS)

    Ramondetta, P.; Feller, A.; Noto, R.; Lombardi, T.

    1975-01-01

    A low cost, quick turnaround technique for generating custom metal oxide semiconductor arrays using the standard cell approach was developed, implemented, tested and validated. Basic cell design topology and guidelines are defined based on an extensive analysis that includes circuit, layout, process, array topology and required performance considerations particularly high circuit speed.